Substantial changes in the radial distribution function of amorphous Si films have been observed in neutron-diffraction studies. The spectra indicate changes in short-range order associated with an approx.11% modification in the bond-angle distribution width. The results allow the first direct comparison of structural and vibrational Raman probes of variations in local order in thin-film amorphous solids. Good agreement is obtained between the measured bond-angle variation and that based on Raman estimates.
In situ fracture studies on thin-film NiTi intermetallic compounds have been carried out in the high-voltage electron microscope at Argonne National Laboratory. Local stress-induced amorphization of regions directly in front of moving crack tips has been observed under tensile loading conditions. The stress-induced amorphization at crack tips exhibits a temperature dependence similar to that of ion-induced amorphization of NiTi. The upper limiting temperature for stress-induced amorphization is the same as that for ion-induced amorphization of crystalline NiTi and for amorphous phase formation during ion-beam mixing of Ni and Ti multilayer specimens. This upper limiting temperature of 600K is also the lowest temperature at which stress-induced amorphous phase crystallizes during isothermal annealing. This isothermal ...
We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.
Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thinamorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated ...
The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the ...
Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)
Lithium phosphorous oxynitride(Lipon) thin films as a lithium ion conductive electrolyte were prepared by radio frequency reactive sputtering in N2 plasma. The properties of the amorphous Lipon solid electrolyte were investigated as a function of N2 pressure during reactive sputtering. The ionic conductivity and the electrochemical stability of Lipon thin films improved drastically as the N2 pressure decreased. The ionic conductivity closed to 10?6 S cm?1 and obtained a stability window of 1.0?5.0 V with an N2 pressure of 5 mTorr, where the number of nitrogen bonds between the phosphate groups were more than those formed at higher pressure. It was possible to fabricate the Li//LiCoO2 complete thin film battery using this Lipon solid electrolyte, which exhibited excellent discharge characte...
The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and ...
Polycrystalline ZnS semiconducting films have been prepared in sandwich configuration by spray pyrolysis technique using ZnO-coated glass substrates and mixed aqueous solutions of ZnCl{sub 2} and thiourea. The sandwich structures have been produced successfully by means of ZnO-coated glass substrates. The produced ZnS films have been crystallized in a wurtzite structure and had a direct band gap energy of 3.62 eV. The electrical properties of the sample have been studied by an analysis based on the thermally stimulated current spectra in the temperature range of 40-300 K with various heating rates. A set of curves of I (T) for varying initial density of filled traps at a heating rate of {beta} {sub 2}=0.06 K s{sup -1} indicate that the observed peaks in the TSC curve of polycrystalline ZnS films have first-order features. In order to evaluate the trap parameters of ZnS films, we have used curve-fitting ...
In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.
A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.
By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.
By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).
Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.
Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is considered. Between CIGSSe ...
The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in rectangular magnetron sputtering systems are discussed.
Heusler films with L2_1 and B2 structure are deposited simultaneously on amorphous carbon films, Si(100) surfaces, and in situ cleaved InAs(110) surfaces by coevaporation of Ni and the alloy MnIn. Morphology, structure, and stoichiometry are investigated with transmission-electron microscopy, electron diffraction, and X-ray spectroscopy. The almost perfect lattice match supports highly oriented growth of Ni_2MnIn on InAs, which is proven by electron diffraction under grazing incidence. The electrical resistivity of thin films on Si show metallic behavior. At temperatures of liquid helium point-contact Andreev reflection spectroscopy is performed on films grown on Si(100) and in situ cleaved InAs(110) surfaces yielding spin polarizations comparable to the ones of Fe, Ni, Co, and permalloy (Ni_8_0Fe_2_0).
Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.
This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.
Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)
Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.
Fourier Transform Infrared (FTIR) spectroscopy has been utilized during high rate E-beam evaporation/deposition of YBa2Cu3O7 (YBCO). The results demonstrate the great utility of FTIR as an in situ monitor of YBCO deposition and processing. We detect different (amorphous/fine polycrystalline) insulating pre-existing phases to the high Tc superconducting phase which appear to have distinct reflectivity fingerprints dominated by thin film interference effects, as a function of temperature and oxygen pressure. These fingerprints reveal some of the kinetic and thermodynamic pathways during the growth of YBCO.
A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.
This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.
A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.
The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)
Nb{sub 2}O{sub 5} thin films were formed on aluminum foils by a sol-gel process in order to increase the capacitance of the aluminum foils which are used as aluminum electrolytic capacitors. Investigations focussed on the preparation and characterization of the coating solution, the formation of Nb{sub 2}O{sub 5} thin films on aluminum foils, and the heat treatment and anodization of the films. The phase transition and electrical properties, such as capacitance, leakage current, and withstand voltage of the Nb{sub 2}O{sub 5} thin films were also measured. The Nb{sub 2}O{sub 5} thin films annealed at temperatures below 550 degree C were found to be amorphous, but they were crystallized to the orthorhombic phase by annealing at temperatures higher than 580 degree C. The capacitance of the coated samples increased with an increase in the thickness of the formed Nb{sub 2}O{sub 5} ...
Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 GPa as well as a low ...
Microstructure and electrical properties of iron oxide Fe_2O_3 thin films prepared by spray pyrolysis method have been experimentally characterized. The effect of substrate temperature as well as deposition time on the structural features (crystallite size and microstrain) and electric resistivity of these films has been investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) characterized the structure study. The results of X-ray diffraction showed that with increasing substrate temperature bias the film structure changed from amorphous to crystalline at the same deposition time. At a substrate temperature of 350 deg. C and low deposition time, #alpha#-Fe_2O_3 appears almost in amorphous form. With rising the substrate temperature and deposition time, the crystallinity was improved. At T_s_u_b>350 deg. C, a well-crystallized rhombohedral phase of #alpha#-Fe_2O_3 was obtained. Single order Voigt ...
A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thinamorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 C a metastable cubic alloy forms at the Zr deposited on Al interface. Upon heating ...
This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...
The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for ...
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.
This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL's in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy's National Photovoltaic Research Program plans.
This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL`s in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy`s National Photovoltaic Research Program plans.
An in situ synthesis of ZnS and CdS quantum dots (QDs) in an aqueous solution of sodium hyaluronate (Hyal) produced foils emitting light on excitation with a UV light. The wavelength of emission was only slightly QDs size and more QDs concentration dependent and reached up to {approx}320 nm in the case of ZnS and {approx}400-450 nm in the case of CdS. Nanoparticles remained as non-agglomerated 10-20 nm nanoclusters. CdS/Hyal and ZnS/Hyal-QDs biocomposites were characterized using photoluminescence (PL), IR spectrometric techniques, and Transmission Electron Microscopy (TEM). The absolute molecular weights, radii of gyration, R{sub g}, and thermodynamic properties of the obtained foils are given. Electric resistivity studies performed for the hyaluronic foil in the 100-1000 V range have revealed that the hyaluronate foil has very weak conducting properties and QDs only insignificantly affect those properties as QDs practically did not interact ...
We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}
Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T _s #<=# 450 deg. C were amorphous; while those produced at T _s_u_b = 500 deg. C were polycrystalline #alpha#-Fe_2O_3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the visible and infrared range. The cyclic voltammetry study showed ...
Ferroelectric barium strontium titanate (Ba0.7Sr0.3TiO3)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH3(CH2)3CH(C2H5)CO2]2], strontium 2-ethylhexanoate [Sr[CH3(CH2)3CH(C2H5)CO2]2] and titanium(IV) isopropoxide [TiOCH(CH3)2]4 precursors using a modified sol-gel technique. The precursor except [TiOCH(CH3)2]4 were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550degreeC for 1h in air. The lattice constants "a" and "c" were found to be 3.974A and 3.990A, respectively. The grain...
This paper reports the results of leaching experiments conducted with and without Thiobacillus ferroxidans at the same conditions in solution. The extent of leaching of ZnS with Bacteria is significantly higher than that without bacteria at high concentrations of ferrous ions. A porous layer of elemental sulfur is present on the surfaces of the chemically leached particles, which no sulfur is present on the surfaces of the bacterially leached particles. The analysis of the data using the shrinking-core model shows that the chemical leaching of ZnS is limited by the diffusion of ferrous ions through the sulfur product layer at high concentrations of ferrous ions. The analysis of the data shows that diffusion through the product layer does not limit the rate of dissolution when bacteria are present. This suggests that the action of T.ferroxidans in oxidizing the sulfur formed on the particle surface is to remove the barrier to diffusion by ...
An aliphatic thiol ligand of CuInS2/ZnS core/shell quantum dots is replaced with a hydroxyl-terminated thiol ligand by utilizing `on-off state' of ligands during growth stage of the quantum dots. After the ligand-exchange, negligible differences were observed on both photoluminescence spectrum and luminescent quantum efficiency. The reason for the high retention of luminescent efficiency comes from no local agglomeration and no surface deterioration of QDs. It is also observed that 70% of initial ligands are exchanged by the replacing ligand, determined by FT-IR and 1H NMR. The proposed method provides the quantum dots with an excellent dispersibility in polar solvents, supported by identical luminescence decay characteristics of the QDs.
Combined electron, photon, and intense UV irradiation tests have been carried out on three mirror designs, (Si, Al/sub 2/O/sub 3/)/sub 2/Ag, (Si, SiOx)nAg, and (ZnS, Al/sub 2/O/sub 3/)4Ag, to investigate their suitability for space-borne chemical laser applications. It is found that the (Si, oxide)nAg enhanced-reflectance design is a viable candidate for such applications, whereas ZnS, in combination with either ThF/sub 4/ or Al/sub 2/O/sub 3/, shows unacceptably high absorption increases at the 2.8-micron HF laser wavelength with irradiation. It is pointed out, however, that further experiments are needed to fully understand the effect of irradiation on the (Si, oxide)nAg enhanced-reflectance mirrors.
For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high resolution SEM and a x-ray diffractometer, ...
Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to ...
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
In the present work, bulk amorphous and nanocrystalline Al83Fe17 alloys were obtained by consolidation of mechanically alloyed powders. Mechanical alloying of Al-17% Fe powder mixture yielded powder with an amorphous structure. Thermal behaviour of the milling product was examined using differential scanning calorimetry. This investigation revealed that the amorphous phase crystallised above 380^oC. The amorphous powder was compacted under a pressure of 7.7GPa in different conditions: at 380^oC for 600s and at 1000^oC for 180s. Structural investigations of the bulk material revealed that the amorphous structure was retained after consolidation process applied at 380^oC. Compaction under high pressure at 1000^oC caused crystallisation of the amorphous phase and appearance of metastable nano...
In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer on the silicon nitride powder, crystallize ...
Poster session: Abstract is full text. Track membranes are thin polymer foils irradiated by heavy ions. The defects created by the heavy ions are located along the ions trajectory, the track. It is possible to open channels by etching with a chemical agent. These channels are very uniform. Small Angle Scattering (of X rays and neutrons) give global information about the characteristics of the channel shape. As the nanochannels are strictly parallel, an excellent sample orientation is required to obtain interpretable spectra. Then shoulders due to the oscillations of the Bessel function (radial part of the channel shape Fourier transform) are easily seen in the scattered intensity in the PXY data treatment software of SAS spectra allow to determine the channel diameter with its dispersion law, to demonstrate the existence of a wall thickness with a linearly varying density, and to assess the roughness. PXY can also detect non cylindric shapes like single or double ...
Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) H"+ and He"+ ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ...
Polysaccharides like cellulose and chitosan are known for their filmic properties. This paper concerns the synthesis and the study of chitosan-based polymer electrolytes. A preliminary work concerns the study of glucosamine reactivity. The poly-condensation of chitosan ethers (obtained by reaction with ethylene oxide or propylene oxide) with bifunctional and monofunctional oligo-ethers leads to the formation of thin lattices (10 {mu}m) having excellent mechanical properties. The presence of grafted polyether chains along the polysaccharide skeleton allows to modify the vitreous transition temperature and the molecular disorder of the system. Two type of polymer electrolytes have been synthesized: electrolytes carrying a dissolved alkaline metal salt and ionomers. The analysis of their thermal, dynamical mechanical, nuclear magnetic relaxation, electrical, and electrochemical properties shows that this new class of polymer electrolytes has the same performances as ...
In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical properties are depended strongly on the substrate temperature.
Research was conducted at Pacific Northwest Laboratory to develop high photosensitivity adaptive optical elements utilizing ion implanted lanthanum-doped lead-zirconate-titanate (PLZT). One centimeter square samples were prepared by implanting ferroelectric and anti-ferroelectric PLZT with a variety of species or combinations of species. These included Ne, O, Ni, Ne/Cr, Ne/Al, Ne/Ni, Ne/O, and Ni/O, at a variety of energies and fluences. An indium-tin oxide (ITO) electrode coating was designed to give a balance of high conductivity and optical transmission at near uv to near ir wavelengths. Samples were characterized for photosensitivity; implanted layer thickness, index of refraction, and density; electrode (ITO) conductivity; and in some cases, residual stress curvature. Thin film anti-ferroelectric PLZT was deposited in a preliminary experiment. The structure was amorphous with x-ray diffraction showing the beginnings of a structure at ...
In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the as-deposited and ...
The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at substrate temperatures of 50 ...
A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.
This thesis is concerned with the crystallisation behaviour of polymers near to a free surface or a buried interface. The properties of polymers are expected to differ significantly near to an interface (either with air or another polymer), due to the contributions of (a) chain configurations induced at the interface, and (b) different mobilities between interfacial regions and the bulk of the sample. For a semi-crystalline polymer, properties such as the degree of crystallinity and the crystallisation kinetics may be enhanced near to a free surface. Grazing incidence x--ray diffraction (GIXD) is used to investigate such effects in poly(ethylene terphthalate) (PET), showing that a lower crystallisation temperature is obtained at the surface, and the crystallisation kinetics are faster at the surface for all temperatures. It is proposed that in thin films of PET, this surface-induced ordering provides nucleation sites for crystallisation in the bulk. GIXD is also ...
Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in small increments and the concentration of ...
In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si ...
Objective is to study the effects of local structure, interatomic forces, and atom size on the mobility of metal atoms in amorphous silica and at the silica surface. EXAFS studies of Zn and Pt in silica are reported. (DLC)
Improving the anti-demineralizing/remineralizing and mechanical properties of amorphous calcium phosphate (ACP) composites has been the focus of our recent research. In this study, an ethoxylated...Full Text Available
A process for the generation of halogens from halide-containing solutions includes the step of conducting electrolysis of the solutions in an electrolytic cell having a platinum based amorphous metal alloy anode.
The authors present differential scanning calorimetry (DSC) and in situ Moessbauer spectroscopy results for Metglas ribbons, to which different heat treatments were made. The Curie temperature of the amorphous phase is determined and the evolution of the magnetic field of this phase is studied as a function of temperature
Magnetic properties of a recently developed Fe-based amorphous alloy with a high saturation induction of 1.65 T are reviewed. The increased saturation induction is fully utilized in transformers with reduced magnetic losses, physical sizes and audible noises, minimizing some of the drawbacks of amorphous metal-based transformers based on a currently available amorphous alloy. Impacts of this on the worldwide energy savings and reduction of greenhouse gas emissions are discussed. A recent effort in achieving a saturation induction beyond 1.65 T in nanocrystalline alloys is mentioned.
Experiments were conducted which established that the higher passivating capacity of Ni/sub 60/Nb/sub 40/ alloys in the amorphous state and higher efficiency of the anodic process of generation of chlorine (2 N NaCl + HCl to pH = 0) in comparison with the crystalline state are determined by higher homogeneity and density of the passive films formed on the amorphous alloy and by higher electron conduction which depends directly on the difference in the structure of the passive films formed on the alloys in the amorphous and crystalline states.
The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy was shown by metal oxidation which led to ...
The spectroscopic properties of Cr{sup 2+}, Co{sup 2+}, and Ni{sup 2+}-doped single crystals of ZnS, ZnSe, and ZnTe have been investigated to understand their potential application as mid-IR tunable solid-state laser media. The spectroscopy indicated divalent Cr was the most favorable candidate for efficient room temperature lasing, and accordingly, a laser-pumped laser demonstration of Cr:ZnS and Cr:ZnSe has been performed. The lasers` output were peaked at {approximately} 2.35 {mu}m and the highest measured slope efficiencies were {approximately} 20% in both cases.
This paper studies the analytical application of europium (III)-morin complex which is formed in alkaline medium and has an intense color. The extent of europium extraction was determined by adding to the extract a morin solution in isoamyl alcohol in a 50-100-fold excess with respect to europium. The dependence of the optical density of the extracts on the ph in the system europium (III)-morin-water-organic solvent for different excesses of the reagent is shown: this indicates formation of two extractable complexes, one being dominant in the pH range 4-7, the other at pH greater than or equal to 8.5. The extraction of the europium (III)-morin complex from alkaline solution is used for direct extraction-photometric determination of europium(III) in compounds of elements having amphoteric properties or forming amines (Zns, Mo0/sub 3/).
Single phase amorphous Al_xHf_1_0_0_-_x alloys with a wide amorphization range (33#<=#x#<=#75) were synthesized by the solid-state interdiffusion of pure polycrystalline Al and Hf powders at room temperature using a rod-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders were investigated by means of X-ray diffraction, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling (0-173 ks) are intermixed to form amorphous phase(s) upon heating to about 980 K by so-called thermally assisted solid-state amorphization (TASSA). The amorphization heat formation for the binary Al_xHf_1_0_0_-_x system via TASSA, ...
The structural variations of amorphous metals, such as Pd/sub 80/Si/sub 20/, with irradiation of helium ion, neutron, and gamma ray have been mainly pursued by the method of X-ray diffraction and thermal analysis. It should be noticed that the amorphous metals show a radiation resistance, that is, no remarkable structural changes under helium ion, neutron, and gamma ray irradiation.
Neutron scattering techniques have been used to measure the static structure and magnetic excitations in amorphous magnets. Sum rules and computer models are used to discuss the relationship between the static disorder and the shape of the excitation spectrum. Polarized beam measurements of chi''(Q,E) are compared to analytical theories and computer calculations for the magnetic excitations in amorphous ferromagnets.
As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO_3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed ...
The U.S. Geological Survey, in cooperation with the U.S. Department of Energy, is conducting a study to determine the natural geochemistry of the Snake River Plain aquifer system at the Idaho National Engineering Laboratory (INEL), Idaho. As part of this study, a group of geochemical reactions that partially control the natural chemistry of ground water at the INEL were identified. Mineralogy of the aquifer matrix was determined using X-ray diffraction and thin-section analysis and theoretical stabilities of the minerals were used to identify potential solid-phase reactants and products of the reactions. The reactants and products that have an important contribution to the natural geochemistry include labradorite, olivine, pyroxene, smectite, calcite, ferric oxyhydroxide, and several silica phases. To further identify the reactions, analyses of 22 representative water samples from sites tapping the Snake River Plain aquifer system were used to determine the ...
Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the sputtering targets, the background gases, and the substrate surfaces. Auger Electron Spectroscopy (AES) results showed the presence of O and C ...
This paper presents a technical feasibility study project for the large scale rooftop photovoltaics (PV) grid connected system at Charoenphol-Rama I green building super store of TESCO LOTUS (TL) in Thailand. The objective of this project is (i) to study the technical feasibility of installation 350 kWp PV systems on the top of the roof in this site (ii) and to determine the energy produce from this system. The technical factors are examined using a computerized PVS 2000 simulation and assessment tool. This super store building located in Bangkok, with latitude 14 N, longitude 100 E and the building direction is 16 from North direction. The building roof area is 14,000 m2; with 3 degree face East and 3 degree face West pitch. Average daily solar energy in this area is approximately 5.0 kWh. The study team for this project consists of educational institution as School of Renewable Energy Technology (SERT) and private institution as Panya Consultants (PC). TL is the project owner, PC is ...
The advent of light metal alloys and advanced materials (polymer, composites, etc.) have brought the possibility of achieving important energy reductions into the full life cycle of these materials, especially in transportation applications. 1 These materials have gained acceptance in the aerospace industry but use of light metal alloys needs to gain wider acceptance in other commercial transportation areas. Among the main reasons for the relatively low use of these materials are the lack of manufacturability, insufficient mechanical properties, and increased material costs due to processing inefficiencies. Considering the enormous potential energy savings associated with the use of light metal alloys and advanced materials in transportation, there is a need to identify R&D opportunities in the fields of materials fabrication and forming aimed at developing materials with high specific mechanical properties combined with energy efficient processes and good manufacturability. ...
A number of screening tests were performed to determine ion species that effectively reduce wear rates when implanted in four industrial steels. Ball bearing steel 100Cr6 (AISI 52100) showed a wear rate reduction by a factor of 20 when implanted with carbon dioxide to a dose of 5x10{sup 17} cm{sup -2} with a non-mass-separated ion beam and by a factor of {>=}20 when implanted with 5x10{sup 17} cm{sup -2} oxygen ions. For the ferritic and martensite steels X90CrMoV18 (AISI 440B, unhardened and hardened) also a strong wear reduction after implantation of oxygen ions was found. Co-implantation of aluminum and oxygen also reduces wear rates of X90CrMoV18, of S6-5-2 (AISI M2), and of 100Cr6, respectively. For comparison, thin oxide layers were grown in a low-temperature thermal oxidation process. These experiments also yielded reduced wear rates by a factor of 10. The surfaces were investigated and characterized by XPS, SIMS, TEM, and microhardness measurements to ...
Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.
We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous ...
A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, Fe-, Co- or Ni-doped ...
Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like ...
Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the ...
Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the ...
The damage induced by low-temperature proton irradiation in amorphous Pd/sub 80/Si/sub 20/ prepared by ion implantation is studied via electrical resistivity measurements. Our experimental results concerning the initial damage rate and the resistivity saturation are compared to the results obtained for electron and high energy /sup 16/O irradiation of amorphous Pd/sub 80/Si/sub 20/ quenched from the melt. The resistivity curve is analyzed in terms of irradiation-induced point defects.
A method of preparing a high temperature superconductor from an amorphous phase. The method involves preparing a starting material of a composition of Bi.sub.2 Sr.sub.2 Ca.sub.3 Cu.sub.4 Ox or Bi.sub.2 Sr.sub.2 Ca.sub.4 Cu.sub.5 Ox, forming an amorphous phase of the composition and heat treating the amorphous phase for particular time and temperature ranges to achieve a single phase high temperature superconductor.
A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.
Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with ...
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.
It is generally known that a number of metallic glasses have excellent corrosion resistance in a variety of chemically hostile environments. Consequently, the use of laser cladding to coat a massive crystalline material such as aluminium with a layer of a metallic glass has obvious advantages. In this paper, the authors will show that the formation of a predominantly amorphous layer of Zr_6_0Al_1_5NI_2_5 alloy by laser processing is possible, if the obstacles to amorphization are overcome. In addition, evidence of the excellent corrosion resistance of this alloy in a NaCl solution will be given. A comparative study of the corrosion behavior of this amorphous alloy with pure aluminium and Al-Cr alloy will be done, in order to complete previous studies of laser processed coatings of aluminum substrates.
Recent advances made in the area of amorphous and nanocrystalline alloys exhibiting high saturation inductions are reviewed. A new chemical composition was identified that achieves a saturation induction of 1.64 T in an iron-based amorphous alloy. This alloy, when used in electrical transformers, shows a much improved performance over the existing amorphous alloy. Nanocrystalline FeCoCuNbSiB alloys are found to have saturation induction levels reaching 1.7 T. These materials are suited for use in sensors and inductors carrying large currents. Some of these nanocrystalline alloys show a BH squareness ratio exceeding 90%, which can be utilized in pulse power devices. Recent developments in the applications of these materials are also pointed out.
The main compositions of iron-base amorphous self-fluxing alloy powders of 150 mesh, used in this work, are Fe, Cr, Ni, W, Mo, B, Si and C. The ranges of each element in at% are (65-70)Fe, (3-5)Cr, (2-4)Ni, (2-4)W, (1-2)Mo, (10-14)B, (4-7)Si and (2-3)C. The atomic ratio of metal-metalloid is about 80:20, so this alloy is abbreviated as M_8_0X_2_0. The material on which coatings were deposited is 1020 steel, austenitized for 1h at 880 C, water quenched, and tempered at 180 C for 1h. This heat treatment resulted in a low carbon martensite structure with a hardness of HRC35-45. After cleaning, shot blasting and preheating the steel to about 200 C, the authors sprayed a thin Ni-Al alloy layer of about 0.1--0.15mm in thickness onto the specimen by means of an oxygen-acetylene torch to provide better bonding of the coating with substrate. Then the M_8_0X_2_0 and M_8_0X_2_0+8%CeO_2 alloy coatings were sprayed to a thickness of about 0.6--0.8mm. The ...
Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various TiC-TiB{sub 2} targets in Ar+N{sub 2} atmospheres with low nitrogen flows. In the case of carbon-rich ...
By W. Wayne Scott. Langley Research Center. SUMMARY. Thin- and thick-target bremsstrahlung spectra are presented for electron energies up to 7.0 MeV. ...
Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)
The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.
Amorphous metals have an atomic structure resembling that of glass, and have high strength, toughness, and excellent magnetic properties for transformer applications. This type of metal has the potential to reduce the core losses of electromagnetic apparatus by 70-75% compared to the best grain-oriented silicon iron currently used. If all 4 million distribution transformers now in service in Canada were replaced by the more efficient amorphous units, it is estimated that over 5.25 billion kWh of energy could be saved annually. The experience of the General Electric (GE) Company and other researchers with operation of amorphous transformers is described. GE first tried operating amorphous metal transformers on a utility distribution system in April 1982. The shell-type cruciform design showed stable, low-loss performance over eight years of service. GE and the Electric Power Research Institute cooperated ...
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
The effect of the moisture content in amorphous polymers (PS, PVC, PMMA) on their electro-physical properties is considered. Analytical relationships describing the inflence of the external-field frequency and environmental relative humidity on the conductivity of the polymers are given. For the use of these polymers as active elements of moisture sensors, the moisture-resistive effect is estimated.
Density changes in amorphous Pd{sub 80}Si{sub 20} during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%.
This paper describes the anelastic strain recovery and the strain hardening of amorphous metals and presents the experimental result that creep deformation is represented by a viscoelastic model consisting of rheological elements. Materials studied were 80Pd--20Si, 80Fe--13P--7C, and 60 Cu--40 Zr. (DLC)
This paper presents recent results concerning the chemical and electrochemical synthesis, the electrochemical properties and the characterization of two new families of amorphous oxides of formula Li{sub x}MVO{sub 4} (1
The thermal spike model has been successfully applied to track formation by swift heavy ions in insulators. Arguments are given supporting the assumption that the thermal spike mechanism is also valid for the anisotropic growth. The glass transition temperature is used as the main thermal parameter of the amorphous solids. Experimental results on the track formation in {alpha}-quartz and in crystalline Ni{sub 3}B and also on the anisotropic growth in Pyrex and Synsil glasses, in amorphous Pd{sub 80}Si{sub 20}, Ni{sub 3}B and Fe{sub 85}B{sub 15} are discussed. Good agreement is found with the predictions of the thermal spike model. (orig.).
Amorphous Pd/sub 80/Si/sub 20/ was irradiated with fast neutrons (>1 MeV) to a fluence of 5 x 10/sup 20/ neutrons/cm/sup 2/. X-ray scattering intensities were measured before and after the irradiation with monochromatic Cu-K..cap alpha../sub 1/ rays. Scattered intensities for s>0.4 A/sup -1/ (s=2 sintheta/lambda) proved unaffected, while intensities were found remarkably enhanced for s<0.4 A/sup -1/ after the irradiation, i.e., in the small-angle region and the leading edge of the first halo. The results are discussed in relation to the structural anomalies in amorphous solids.
Low energy (<100 eV) Ar"+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)/sub 1-x/Ge/sub x/ alloys. The films were approx.1.5 #mu#m thick and the average grain size in the metastable state was approx.300 A.
#beta#-sialon ceramics of equal overall compositions but containing amorphous, partly crystalline and almost completely crystalline intergranular phase(s) have been oxidized in oxygen at 1350 deg C for 20 hours. The obtained weight gain curves do not follow the parabolic rate law (#DELTA#W/A_0)"2= k_pt + #beta#. To the extent that crystallization occurs in the oxide scale during the oxidation experiment, the amorphous cross section area through which oxygen most easily diffuses will decrease with time. A brief description of this new rate law is given, and the obtained oxidation curves will be discussed within that framework. 4 refs., 2 tabs., 2 figs.
Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)
Internal friction of amorphous Pd/sub 80/Si/sub 20/ metal doped with hydrogen or deuterium was measured with a specially designed apparatus using amorphous metal sheet as a part of the electric oscillating circuit. Two peaks in Q/sup -1/ curve are observed. Applying the peak shift method to the first Snoek-like peak, we can determine the relaxation time from which the microdiffusion coefficient can be calculated. The obtained microdiffusion coefficient is about 10/sup -14/ m/sup 2//s at 200 K, being comparable with the macrodiffusion coefficient obtained from the releasing method. It can, however, not elucidate the hydrogen isotopic effect on the peak temperature of Q/sup -1/ curve, the activation energy for relaxation and the relaxation time from the present work because of the broadness of obtained Q/sup -1/ curve.
Some N-containing or S-containing organic substances and some acetylenic alcohols were tested as inhibitors of the corrosive attack suffered by Fe-based metallic glasses in deaerated 0.1 N sulfuric acid (H{sub 2}SO{sub 4}) solution at 25 C. It was verified that the specific action these compounds exerted on the corrosion process of the amorphous alloys was similar to the one these compounds exerted on polycrystalline iron. The most efficient substances were those containing a sulfur atom with available lone pairs, which chiefly inhibited the anodic reaction of both metal specimens. Owing to the chemical and physical homogeneity of the amorphous alloy, the chemisorbed inhibitor film that formed on the glassy surface was more stable and protective than that formed on the polycrystalline iron.
Using the method of high resolution electron microscopy (HEM) the shape and structure of powder particles of elementary amorphous boron, prepared by plasmochemical reduction of boron trichloride by hydrogen before and after their heat treatment in vacuum of approximately 1 x 10 SPa at the temperature of approximately 800 deg C for 30 min, have been studied. It is established, that ultradispersed particles of amorphous boron present flat formations (discs) of stable configurations, composed of several icosahedrons (structural elements); their growth during heat treatment takes place first in habitus plane without far order formation, and then, after attaining the diameter of approximately 500 A, the process of three-dimensional crystallization starts, which leads to the formation of crystal lattice of boron US -rhombohedric modification.
The authors present an investigation of structural changes occurring in bilayer stacks with crystalline columnar growth when one of the layers is substituted by layers known to grow amorphous. In Co/Cu multilayers the Co layers were substituted by CoZr layers of varying Zr content and layer thickness. Structural characterization was performed by transmission electron microscopy (TEM). They show that the amorphization of the CoZr layers leading to a destruction of the columnar growth depends both on the Zr content and on the thickness of the CoZr layers. Additionally a change to textured growth with a normal to the substrate occurs with increasing Zr content. They explain their observations by a simple picture based on the hard sphere model.
Fermented sausages were produced with 25%, 50%, 75% or 100% of their pork back fat content replaced by amorphous cellulose gel. The sausage production was monitored with physical, chemical and microbiological analyses. The final products were submitted to a consumer study, and the volatile compounds of the final products were extracted by solid-phase microextraction and analyzed by GC/MS. The reformulated fermented sausages had significant reductions in fat and cholesterol, and the volatile compounds derived from lipid oxidation were also reduced in the final products. These results suggest that the substitution of up to 50% of the pork back fat content by amorphous cellulose gel can be accomplished without a loss of product quality, enabling the production of fermented sausages with the l...
A non-resonant RF cavity loaded with amorphous alloy cores has been designed and tested. The cavity has a re-entrant structure loaded with 8 amorphous alloy toroidal core and its characteristic impedance is designed as 450 Omega . The RF power is fed by 1 kW solid state amplifier using a step-up transformer with 1:9 impedance ratio. In the high power test, an accelerating gap voltage of more than 900 V was measured with input power of 1 kW in the frequency range of 1 to 10 MHz. The voltage standing wave ratio (VSWR) was less than 2.0. The results prove that the cavity may be used successfully within a compact proton synchrotron for a cancer therapy facility. (3 refs).
Thinning and burning forests established on revegetated mine pits in jarrah (Eucalyptus marginata) forests of south-west Australia is being considered as a management option to accelerate succession in sites with excessive tree densities. To assess the impact of thinning and burning on reptiles and small mammals, we installed trapping grids in eight thinned and burned sites, each paired with untreated controls. Of the eight pairs, four were in rehabilitated sites (planted with nonlocal species) and four were in restored sites (seeded with local species). Thinning and burning had no significant impact on the small mammal community, although Cercatetus concinnus was more abundant in rehabilitated sites. In contrast, thinning and burning significantly increased reptile abundance and species r...
Aqueous solutions of Al/sub 2/(SO/sub 4/)/sub 3/ (1.05 g/100 ml), AlCl/sub 3/ (0.82 g/100 ml) and Ca(OH)/sub 2/ slurry (0.94 g/50 ml) were mixed in various volume ratios and passed through a filter. White cakes left on the filter consisted mainly of ettringite (6CaO.Al/sub 2/O/sub 3/.3SO/sub 3/.32H/sub 2/O). The cakes were then calcined at various temperatures of 300/sup 0/ -- 1000/sup 0/C for 30 and 60 min and pulverized to 80 -- 200 mesh powders. The adsorption capacity of the powders for U(VI) ions dissolved in aqueous solutions was determined by immersing 0.100 g of their powders in 50 ml of the aqueous solution containing 100 ppm of U(VI) ions mainly in the form of (UO/sub 2/(CO/sub 3/)/sub 3/)/sup 4 -/ for 2 hours. The results obtained were summarized as follows. 1) Among the powders prepared, those of the oxide compositions, 2.9CaO.Al/sub 2/O/sub 3/.1.4SO/sub 3/ and 2.5CaO.Al/sub 2/O/sub 3/.1.2SO/sub 3/, all fired at 500/sup 0/C or 600/sup 0/C showed high adsorption capacity for ...
TiO{sub 2} is a vital material in several technologies including, photocatalysis, gas sensing, biomaterials and optical coatings. Among the several crystal structures of this oxide, rutile has the highest density and microhardness, the highest index of refraction and the highest temperature stability. The processing of dense polycrystalline materials often includes the addition of a liquid-forming phase at higher temperatures. This technique is known as liquid-phase sintering and has been studied extensively. Rutile boundaries containing an amorphous phase have been used to study boundary migration and grain-boundary grooving. Visible-light (VLM), scanning electron (SEM) and transmission electron microscopy (TEM) in addition to electron-backscatter diffraction (EBSD) and a focused-ion beam (FIB) tool were used to characterize boundary migration in rutile. EBSD analysis was carried out on a Philips XL30 FEG SEM equipped with a DigiView 1612 high-resolution, ...
We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant ...
This paper examines the correlation between mechanical properties and the density, phase, and hydrogen content of deposited alumina layers, and compares them to those of sapphire and amorphous alumina synthesized through ion-beam irradiation of sapphire. Alumina films were deposited using electron beam evaporation of aluminum and co-bombardment with O{sub 2}{sup +} ions (30-230 eV) from an electron cyclotron resonance (ECR) plasma. The H content and phase were controlled by varying the deposition temperature and the ion energy. Sapphire was amorphized at 84 K by irradiation with Al and O ions (in stoichiometric ratio) to a defect level of 4 dpa in order to form an amorphous layer 370 nm thick. Nanoindentation was performed to determine the elastic modulus, yield strength and hardness of all materials. Sapphire and amorphized sapphire have a higher density and exhibit superior mechanical properties in ...
Amorphous silicates having small particles with a large surface area were found to have high nonspecific adsorption capacity. Investigations with Escherichia coli T4 bacteriophage have...Full Text Available
Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd/sub 80/Si/sub 20/ films, we have studied the correlation between the hydrogen content and the resistivity.
Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.
Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.
An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of ...
An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO_2. As shown by the investigations of a study of the anodic behavior of Fe_4_0Ni_4_0P_1_4B_6 and Fe_4_0Ni_3_8Mo_4B_1_8, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but without the boron. ...
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles ...
The A-15 compounds are known to favor the occurrence of high temperature superconductivity (transition temperature T/sub c/ > 15K). The origin of superconductivity in these metals is a subject of much controversy and importance. A useful approach to this problem is to study comparatively the superconducting and normal-state properties of the A-15 superconductors and their amorphous counterparts. Efforts along these lines have yielded some insight into the mechanisms responsible for high temperature superconductivity. It is interesting to note that most high-T/sub c/ A-15 compounds contain one glass-forming element such as Ge, Si or Al and are thus conducive to the formation of a non-crystalline phase. The amorphous (or higher disordered) state of the A-15 compounds can be achieved, for example, by one of the following techniques: (1) sputtering or co-evaporation onto substrates held at relatively low temperatures; (2) particle irradiation; ...
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.
Formation of the soft magnetic nanostructure in amorphous Fe_1_4Ni_4_0Zr_7B_1_2 alloy due to heat treatment is studied by the Moessbauer, differential scanning calorimetry, and X-ray diffraction techniques. Annealing at temperatures 520-580 "oC leads to the formation of extremely soft nanocrystalline alloy as revealed by the rf-Moessbauer measurements. The superparamagnetic behaviour was observed for the alloy annealed at 620-640 "oC. At higher annealing temperatures good soft magnetic properties deteriorate. (author)
The room-temperature anisotropy of amorphous Fe_4_0Ni_3_8Mo_4B_1_8 (METGLAS 2628MB) ribbons after various heat treatments has been studied by Moessbauer spectroscopy. The average magnetization direction becomes significantly more out-of-plane after heating above 650 K but below the crystallization temperature. X-ray diffractograms suggest an atomic rearrangement has occurred. (orig.).
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
By the methods of small-angle X-ray scattering and translucent electron microscopy the existence of inhomogeneity of electron density in hydrogenated films of amorphous silicon is confirmed. The decreased density regions are extended and form a branched network of channels oriented mostly by the normal direction to the films surface. The typical size of the decreased density regions network constitutes 10 nm in the 100-800 nm films thickness range. The increase of hydrogen total partial pressure in gas mixture in case of films growth results at first in the decrease of extension of these regions and than to micropores generation in the network nodal points of the decreased electron density regions.
Structural changes of a Ni-P amorphous alloy under focused-ion-beam (FIB) irradiation have been examined using transmission electron microscopy. On the irradiated plane, the formation of crystallographically orientated nanosized crystals (NCs), with the particle size of approximately 10 nm, was observed. A series of electron diffraction analyses have revealed that NCs have a face-centered-cubic (fcc) structure and the following orientation relationships between the NCs and the FIB direction were found. These are, irradiated plane//(111)_f_c_c and FIB direction//_f_c_c.
The total and differential atomic pair-correlation functions of an icosahedral (quasicrystalline) solid were determined for the first time, directly by the differential anomalous-x-ray-scattering technique using synchrotron radiation. The observed atomic distances involving uranium atoms in icosahedral Pd/sub 58.8/U/sub 20.6/Si/sub 20.6/ suggest the presence of a quasicrystalline sublattice with vertex decoration. The pair distribution functions in the icosahedral and amorphous phases are similar up to the second-nearest neighbors, or up to 6 A-circle.
The total and differential atomic pair-correlation functions of an icosahedral (quasicrystalline) solid were determined for the first time, directly by the differential anomalous-x-ray-scattering technique using synchrotron radiation. The observed atomic distances involving uranium atoms in icosahedral Pd/sub 58.8/U/sub 20.6/Si/sub 20.6/ suggest the presence of a quasicrystalline sublattice with vertex decoration. The pair distribution functions in the icosahedral and amorphous phases are similar up to the second-nearest neighbors, or up to 6 A-circle.
Changes in transverse phonon sound velocity were measured during low temperature irradiation of amorphous Pd{sub 80}Si{sub 20} with 3.5 MeV krypton ions. The sound velocity decreases as a function of the ion fluence and shows a tendency to saturate at large fluences at a relative change of {minus}4.7%. The changes in sound velocity were used to determine the changes in shear elastic constant and in Debye temperature both of which were in reasonable agreement with the value reported in the literature.
This short paper (abstract) describes the characteristics and performances of prototypes of ultra-thin lithium micro-batteries (thickness < 0.2 mm) which can be incorporated into microelectronic circuits. (J.S.)
Thin film solar cells and solar cell testing - photovoltaic cells, radiation damage to cadmium sulfide solar cells, and airplane testing of solar cells
A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available
In order to investigate the role of amorphous SiO{sub 2} particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO{sub 2} was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of {gamma}-phase and amorphous nano-SiO{sub 2} particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO{sub 2} particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite ...
In order to investigate the role of amorphous SiO2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of ?-phase and amorphous nano-SiO2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was investigated by an ...
... interactive surfaces and interfaces, and 3) the more complex a ... carbonate or calcium phosphate with a thin interface ... diameter) for nerve prosthesis. ...
A simple experiment to observe weak localization in thin Ag films is presented. A clear theoretical signature of weak localization is predicted in mangetoresistive measurements of thin films samples. We present a simple method for making thin Ag film samples, using evaporative deposition, and observing the small magnetoresistive signal, using a resistance bridge technique. Typical results from our students show that Ag films show the predicted behavior for weak localization with spin effects. These effects can be easily observed in a liquid helium dewar.
... analyzer section for angle resolved measurements, and a thin film evaporator with a quartz crystal microbalance to measure the mass deposition. ...
This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.
In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}
The zinc-blende (ZB) and wurtzite (W) structures are the most common crystal forms of binary octet semiconductors. In this work we have developed a simple scaling that systematizes the {ital T}=0 energy difference {Delta}{ital E}{sub W{minus}ZB} between W and ZB for all simple binary semiconductors. We have first calculated the energy difference {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) for AlN, GaN, InN, AlP, AlAs, GaP, GaAs, ZnS, ZnSe, ZnTe, CdS, C, and Si using a numerically precise implementation of the first-principles local-density formalism (LDF), including structural relaxations. We then find a {ital linear} scaling between {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) and an atomistic orbital-radii coordinate {ital {tilde R}}({ital A},{ital B}) that depends only on the properties of the free atoms {ital A} and {ital B} making up the binary compound {ital AB}. Unlike classical structural coordinates (electronegativity, atomic sizes, electron ...
A real-time neutron radiography imaging system has been installed at the Texas A and M University Nuclear Science Center. The system employs a scintillating screen viewed by a low-light TV camera with a front surface mirror placed at 45deg to the neutron beam. The key components of the system are the neutron camera and the image capture and processing unit. The neutron camera uses an NE 426 scintillating screen (ZnS), front surface mirror, remote focus and zoom lens, intensified relay optics (IRO) and monochrome CCD television camera. The image capture and processing unit consists of an IBM PC AT-compatible computer, arithmetic frame grabber, frame processor and high-resolution color monitor. The neutron camera is similar to others using a silicon intensified target (SIT) television camera to provide a TV image of the low-level light from a NE 426 screen. The IRO and CCD camera are used in place of the SIT camera. The computer digitizes the TV image (512x512x8 bit) ...
A real-time neutron radiography imaging system has been installed at the Texas A and M University Nuclear Science Center. The system employs a scintillating screen viewed by a low-light TV camera with a front surface mirror placed at 45deg to the neutron beam. The key components of the system are the neutron camera and the image capture and processing unit. The neutron camera uses an NE 426 scintillating screen (ZnS), front surface mirror, remote focus and zoom lens, intensified relay optics (IRO) and monochrome CCD television camera. The image capture and processing unit consists of an IBM PC AT-compatible computer, arithmetic frame grabber, frame processor and high-resolution color monitor. The neutron camera is similar to others using a silicon intensified target (SIT) television camera to provide a TV image of the low-level light from a NE 426 screen. The IRO and CCD camera are used in place of the SIT camera. The computer digitizes the TV image (512x512x8 bit) ...
The enhancements described of high-performance CT systems of latest design have again confirmed the importance of CT systems for acute and selective diagnostic imaging. Higher availability, shorter exposure times, and better applicability and handling for examination of poly-traumata patients or patients of intensive care departments are some of the advantages achieved with CT systems which demonstrate CT system efficiency in addition to MRI, which for specific examinations will remain the modality of first choice for diagnostic evaluation. The Tomoscan Av-E presented here was able to answer all relevant diagnostic questions appearing in routine diagnostics and scientific work. For patients, examinations using the spiral CT technique also offers significant advantages. (orig./CB) [Deutsch] Durch die dargestellten Verbesserungen bei Hochleistungs-CT-Systemen neuester Bauart wurde die Bedeutung der CT fuer die akute und selektive Diagnostik erneut bestaetigt. Bessere Verfuegbarkeit, ...
Effect of low-frequency pulsating magnetic field on the microstructure and magnetic properties of amorphous alloy Fe_7_8Si_9B_1_3 were investigated. The temperature rise induced by the treatment was measured by a non-contact infrared thermometer. The crystallization behavior and microstructure of specimens were studied by Moessbauer spectroscopy and transmission electron microscope (TEM). Magnetic properties of the specimens were investigated by alternating gradient magnetometer (AGM). The results show that the low-frequency pulsating magnetic field can promote the single-phase crystallization of amorphous alloy Fe_7_8Si_9B_1_3. The frequency, f of applied field is from 10 to 40 Hz, magnetic field, H is from 0.02 to 0.04 T and treatment duration, t is from 180-300 s. The volume fraction of crystallization phase (#alpha#-Fe(Si), the grain size, 2-10 nm) is 3-7%. The temperature rise less than 7 deg. C. Magnetic properties of samples are improved ...
The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min{sup -1}. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The {beta}-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry ...
The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min-1. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The ?-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry and ...
Crystalline MnMoO{sub 4} was synthesized using a conventional solid reaction method and investigated for its physical and electrochemical properties as an anode material for Li secondary battery. The reversible amount of Li insertion/removal of MnMoO{sub 4} anode during the first cycle was about 800 mA h/g, accompanied by irreversible structural transformation into amorphous material. The amorphization during the first Li insertion was investigated by structural analysis using XRD of electrode. The charge compensation during Li insertion/removal was examined by measurement of X-ray Absorption Near Edge Structure (XANES) spectroscopy. Despite its irreversible structural transformation to amorphous during the first lithiation, subsequent cycles showed a reasonable cyclability. This paper presents the electrochemical properties of MnMoO{sub 4} and discusses the mechanism underlying the Li insertion/removal process.
Laser glazing, using a KrF excimer laser (> = 248 nm, >a = 22 ns), has been used to improve the corrosion resistance properties of crystallized Fe_4_0Ni_3_8Mo_4B_1_8 (Metglas 2826 MB) and the permanent magnet material Nd_1_5Fe_7_7B_8. The formation of an amorphous layer was confirmed by conversion-electron Mossbauer Spectroscopy (CEMS), and the thickness of the amorphous layer was determined from the attenuation of the x-rays diffracted from the underlying crystalline material. The variation with laser fluence of the amorphous layer thickness on the Metglas were measured. The corrosion properties of the original, crystalline and laser glazed Metglas were measured potentiodynamically in acid electrolyte. Similar voltametric characteristics were obtained for the laser glazed surface and original Metglas, both showing a lower current in the passive region than the crystalline material. Laser glazing of the ...
The distribution of activation energies ..delta.. for classical over-the-barrier hopping is computed for a model amorphous metal. The spread in ..delta.. is determined by the variation in equilibrium-site and saddle-point sizes for the assumed model of dense random packing (DRP) of soft spheres. The size distribution is related to the radial distribution function in a manner which reproduces recent numerical results for the interstitials in DRP models. Size (distance) variation in general is related to energy variation by the form of the potential energy V(r). We show, however, that the distribution of equilibrium-site energies can be related directly to the impurity-induced lattice expansion and bulk modulus without detailed knowledge of V(r). The form of V(r) is necessary for the saddle-point distribution, and we estimate this using simple analytic expressions which fit the observed lattice expansion and impurity (hydrogen) vibrational frequency. The effects of a ...
In order to understand the anodic behaviour of Al--Mo and Al--W amorphous alloys in the borate buffer electrolyte, samples of these alloys were polarized galvanostatically. The resultant anodic films were thicker than the passive films formed during potentiodynamic polarization enabling detailed examination of the films and alloy substrates by surface analytical methods. AES investigations suggest that the anodic films formed at low and moderate voltages on Al--Mo or Al--W amorphous alloys consist of Al-oxide, whereas refractory metals remain unoxidized and enriched at the film/substrate interface. Molybdenum and tungsten act as 'dissolution moderators', restraining the substrate dissolution process at the film/substrate interface. However, after anodization at high voltages (50 V), AES revealed the presence of an oxidized refractory metal in the inner part of the anodic film. Based on these results of growth of thick anodic ...
In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, ...
The thermal radiation which generated from the patterned Ta/Pt/Ta thin heater achieved a high temperature up to 1010 {sup o}C under applied current of 2.4 A. In order to reduce an electromigration at high current of 2 A, a Ta capping layer was placed on the Pt layer instead of conventional capping layer, such as SiNx and CoWP. Under the thermal radiation at the applied current of 2 A in the Ta/Pt/Ta thin heater, the Ta capping layer enhanced the lifetime of the Pt thin heater up to 5 h. A stamping process for the crystallization of a-Si was performed for 40 samples using the Ta/Pt/Ta thin heater. For all samples, a-Si has been selectively crystallized and Raman peaks were located near 519 cm{sup -} {sup 1}. These results indicated that the thermal radiation of the Ta/Pt/Ta thin heater was maintained constantly due to the Ta capping.
The degradation status of outlet feeders in Wolsung unit 1 is analyzed using feeder thickness measurement data during overhaul period in 2000. DBs related to feeder thinning are made for parameters affecting dissolution rate and parameters affecting mass transfer rate. The initial thickness of feeder in Wolsung unit 1 is analyzed using initial thickness data of Wolsung unit 2, 3 and 4 as there are no initial thickness data of Wolsung unit 1. The initial thickness is varied as feeder diameter and bending degree, and CANDU feeders can be divided as 3 types for 2.5'' feeders and 3 types for 2'' feeders. The average initial thickness value for each type is defined as the initial thickness value of the type for Wolsung unit 1 feeders. Thinning rate is evaluated as the value dividing difference between initial thickness and minimum measured thickness by operation time. It is found that the distribution of ...
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
We report measurements of the electrical resistivity of the amorphous alloys Fe"4"0Ni"4"0P"1"4B"6 (Metglas 2826), Fe"3"2Ni"3"6Cr"1"4Pr"1"2B"6 (Metglas 2826A) Fe"8"0B"2"0 (Metgals 2605) and Fe"7"5B"2"5 as a function of pressure and temperature. The pressure is varied between 0 and 12 GPa, the temperature between 1.2 and 380 K. At low temperatures the pressure dependence yields additional information on the scattering mechanism. (orig.).
In-situ TEM investigations during thermal treatment of amorphous Pd{sub 81}Si{sub 19} have been performed. It was found that crystalline nuclei are formed near the perforation edge of the hole produced by electrochemical polishing. After impinging with neighboring crystals, a crystallization front formed which was aligned parallel to the perforation edge. The crystallization front moved in the direction perpendicular to the perforation edge. Crystal growth was found to proceed faster in thinner parts of the specimen than in thicker parts. The results are described qualitatively within a thermodynamic model taking into account volume-, surface- and interfacial free energies and an appropriate specimen geometry.
The catalytic oxygen transfer properties of vanadium containing zeolites and vanadium based sol-gel catalysts with hydrogen peroxides are well known. The severe problem of vanadium leaching caused by the presence of the by-product water has been addressed. To avoid any interference with homogeneously catalyzed reactions, our study focusses on selective oxidations in a moisture-free medium with tert.-butylhydroperoxide. We have investigated the catalytic properties of amorphous microporous materials based on SiO{sub 2}, TiO{sub 2}, ZrO{sub 2} and Al{sub 2}O{sub 3} as matrix material and studied the effects of surface polarity on the oxidation of 1-octene and cyclohexane. (orig.)
Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.
The transformation from the as-quenched amorphous to the crystalline state in Fe_7_8B_1_3Si_9 alloy has been investigated using a new-type neutron diffractometer. The time resolved diffraction patterns clearly show that this alloy crystallizes into FeSi alloy and Fe_2B in that order. The time evolution of these crystalline phases can be analyzed by the Kolmogorov-Johnson-Mehl-Avrami equation with the exponent of about 2.5 over a wide temperature range. This suggests that the crystallization occurs by the diffusion-controlled growth with a constant nucleation rate. The scaling behavior in the crystallization kinetics is also discussed. (author).
The transformation from the as-quenched amorphous to the crystalline state in Fe/sub 78/B/sub 13/Si/sub 9/ alloy has been investigated using a new-type neutron diffractometer. The time resolved diffraction patterns clearly show that this alloy crystallizes into FeSi alloy and Fe/sub 2/B in that order. The time evolution of these crystalline phases can be analyzed by the Kolmogorov-Johnson-Mehl-Avrami equation with the exponent of about 2.5 over a wide temperature range. This suggests that the crystallization occurs by the diffusion-controlled growth with a constant nucleation rate. The scaling behavior in the crystallization kinetics is also discussed.
Within the framework of the cluster approach and the semiempirical SCF MO LCAO method in the CNDO/BW valence approximation, possible pathways have been compared for the dehydroxylation of aluminosilicate systems. It has been shown that dehydroxylation as a result of splitting of a water molecule from an acidic bridge hydroxyl group and a more basic terminal group Al-OH is the most energyfavorable. Apparently, such a dehydroxylation pathway is primarily characteristic for amorphous aluminosilicates. Typical of crystalline aluminosilicates at moderate heat-treating temperature is dehydroxylation through splitting of a water molecule from an acidic bridge hydroxyl group and a neutral Si-OH group; at higher temperatures, there is a possible pathway of dehydroxylation of highsilica zeolites as a result of condensation of two acidic surface hydroxyls.
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
A ternary nickel-base alloy Ni-W-B has been developed for surface corrosion and wear resistance to replace chromium plating, which uses environmentally hazardous solutions. The deposition conditions used an alkaline bath and insoluble anodes. The as-deposited alloy typically contains 40 wt% W and 1 wt% B and has an amorphous or partially amorphous structure. These deposits compare favorably with hexavalent chromium deposits in throwing power, color uniformity, and reflectivity. The corrosion resistance of Ni-W-B alloy was compared with hexavalent chromium and electroless nickel deposits in a variety of acids, including hydrochloric, sulfuric, fluoroboric, and phosphoric. In all cases, best results were obtained with the Ni-W-B deposits.
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
An experimental study was conducted to determine the effects of ply thickness in composite laminates on thermally induced cracking and changes in the coefficient of thermal expansion (CTE). After a few thermal cycles, laminates with thick-plies cracked, resulting in large changes in CTE. CTE`s of the thin-ply laminates were unaffected by microcracking during the first 500 thermal cycles, whereas, the CTE`s of the thick-ply laminates changed significantly. After about 1500 cycles, microdamage had also reduced the CTE of the thin-ply laminates to a value of about half of their initial value.
This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}
The optical pressure exerted o a thin film, which is locked in the evanescent field formed at the plane interface with a totally-reflected Gaussian beam, is investigated. Some calculations of the pressure on the film caused by the evanescent field are presented in the different conditions of film thickness, film position, incident angle and polarization of a gaussian beam. The results show that the pressure exertion on the thin film can change from pushing to pulling as the parameters are varied. In particular, we find that the direction of optical pressure can act oppositely at the different positions of the film surface in the evanescent field.
A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence x-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films. (author)
Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).
We compared the characteristics on thin-section CT images with the histological structure of thirty-four surgically resected peripheral lung lesions 30 mm or less in diameter with a greater than 50% area of GGA on thin-section CT. Pathologically, focal area of GGA corresponded to alveolar replacement growth of tumor or interstitial fibrotic thickening of inflammation. It is considered that determination of the GGA in small peripheral lung lesions on thin-section CT is useful for the diagnosis of early adenocarcinomas. (author)
The primary determinants of pulmonary disease are environmental. The same thinness and delicacy of the air-blood barrier which allows rapid exchange of oxygen and carbon dioxide also reduce its effectiveness...Full Text Available
A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.
The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.
... The phenol and cresylic acid stream is flashed in a thin film evaporator over a concentrated sulfuric acid mixture to remove pyridine type substances ...
The results of a histological study of normal osteoid tissue in man, the monkey, the dog, and the rat, using thin microtome sections of plastic-embedded undecalcified bone, are described. Osteoid tissue...Full Text Available
Nanocrystalline MnO thin film has been prepared by a pulsed laser deposition (PLD) method. The reversible lithium storage capacity of the MnO thin film electrodes at 0.125C is over 472 mAh g{sup -1} (3484 mAh cm{sup -3}) and can be retained more than 90% after 25 cycles. At a rate of 6C, 55% value of the capacity at 0.125C rate can be obtained for both charge and discharge. As-prepared MnO thin film electrodes show the lowest values of overpotential for both charge and discharge among transition metal oxides. All these performances make MnO a promising high capacity anode material for Li-ion batteries. (author)
... In: Separated Flows, AGARD CP No. ... on thin wings in two-dimensional incompressible flow. ... fields in the region of separating and reattaching flows. ...
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.
... to-continuum X-ray intensity ratio [5]. For ence in the means [7]. In addition, washing samples on thin films, the characteristic X- lymphocytes in NH ...
Figure 23 presented detailed layout of the cooling system designed for the Mach 6 hypersonic- transport. The distribution system consisted of thin-wall ...
has been generally related to magnetic forming. One of the methods suggested was the following: A "pancake" magnetic coil is placed over a thin aluminum ...
To improve adherent properties of electrogalvanized steel (EGS) to polymeric topcoats, the surfaces of EGS were modified by polyelectrolyte-modified zinc phosphating solution. The electrochemical reaction between phosphating solution and EGS led to the complete coverage with fully grown hopeite crystals after only 5 sec treatment, thereby improving adhesion to topcoating and providing protection of EGS against corrosion. To evaluate the ability of polyphenylene sulfide (PPS) polyaryl thermoplastic coatings to protect zinc phosphate (Zn{center_dot}Ph)treated steels from corrosion in a wet, harsh environment ( 1.0 wt % H{sub 2}SO{sub 4}, 3.0 wt % NaCl and 96.0 wt % water at temperatures from 25{degrees} to 200{degree}C), we exposed them in an autoclave to attempt heating-cooling cyclic fatigue tests (1 cycle = 12 hr at 200{degrees}C + 12 hr at 25{degrees}C) up to 90 times. The major chemical reaction at the interface between the PPS and Zn in the Zn-Ph layer during cycling led to the ...
A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.
An amorphous mesoporous titania-silica aerogel (20 wt%TiO{sub 2} - 80 wt% SiO{sub 2}) and tert.-butylhydroperoxide (TBHP) have been used for the epoxidation of various allylic alcohols. Allylic alcohols possessing an internal double bond were more reactive than those with a terminal C=C bond. Epoxide selectivities could be improved by addition of (basic) zeolite 4 A and NaHCO{sub 3} to the reaction mixture. (orig.)
In the present paper the progress of optimization of soft magnetic properties have been studied by applying different experimental techniques (magnetic measurements, electric measurements, X-ray analysis, and high-resolution electron microscopy observation). It has been shown that an increase in magnetic permeability after optimization annealing can be mainly attributed to annealing out of microvoids. (author)
A-15 compounds are extremely brittle and difficult to process for practical applications. A novel processing technique was developed to greatly improve the mechanical and superconducting properties of A-15 alloys. The new processing technique can be described as follows: (1) to select compounds that can form the A-15 phase (the selected A-15 compounds in this research were Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys); (2) to rapidly solidify them into the amorphous state; (3) to anneal the quenched amorphous products into ultra fine-grained single A-15 phase. The extreme grain refinement greatly improved the flexibility and the critical current density of the alloys. The melt spinning technique was used to rapidly solidify Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys. Ti3Nb6Mo3Si4 alloys were relatively easily formed into the amorphous state. Nb3Al alloys required the addition of glass forming elements Si and B. It ...
A-15 compounds are extremely brittle and difficult to process for practical applications. A novel processing technique was developed to greatly improve the mechanical and superconducting properties of A-15 alloys. The new processing technique can be described as follows: (1) to select compounds that can form the A-15 phase (the selected A-15 compounds in this research were Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys); (2) to rapidly solidify them into the amorphous state; (3) to anneal the quenched amorphous products into ultra fine-grained single A-15 phase. The extreme grain refinement greatly improved the flexibility and the critical current density of the alloys. The melt spinning technique was used to rapidly solidify Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys. Ti3Nb6Mo3Si4 alloys were relatively easily formed into the amorphous state. Nb3Al alloys required the addition of glass forming elements Si and B. It ...
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage ...
The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.
Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).
Resistivity measurements were performed on Fe40 Ni40 B20 and Pd80 Si20 in order to improve the understanding of structural relaxation in amorphous metals. A model describing structural relaxation as a combination of chemical short range ordering (CSRO) an...
It if first shown, that the effective field of uniaxial magnetic anisotropy of Fe-Cr-P-C and Fe-Ni-B-Si system amorphous alloys is reduced with an increase of the source melt isothermal exposure time. The behaviour noted is conditioned by microcoherence and relaxation processes in the nonequilibrium liquid phase after crystal-liquid phase transition.
Nano-sized particles of a lithium ion conductive solid electrolyte, LiTi{sub 2}(PO{sub 4}){sub 3}, were prepared by laser ablation. The obtained particles were ca. 10nm in diameter. X-ray powder diffraction and Raman spectroscopy showed that they were amorphous with local structure similar to the crystalline counterpart. They were crystallized by the heating at ca. 630{sup o}C. (author)
Computed tomography was performed on 5 patients with chronic cerebral paragonimiasis. CT showed solitary or multiple, amorphous, round, or oval calcifications, and ventricular enlargement in all 5 cases. A large low-density area is also found in 4 of the 5 cases. These CT findings are compatible with previously reported findings of simple X-ray films of the skull, pneumoencephalography, and pathological studies. (author).
The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.
The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.
Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).
Results of an investigation made to develop methods of making iron castings having wall thicknesses as small as 2.5 mm in green sand molds are presented. It was found that thin wall ductile and compacted graphite iron castings can be made and have properties consistent with heavier castings. Green sand molding variables that affect casting dimensions were also identified.
Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).
Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).
The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)
We previously showed that very thin filamentous bacteria affiliated with the division green non-sulfur bacteria were abundant in the outermost layer of thermophilic methanogenic sludge granules fed...Full Text Available
A simple and continuous model for the on-state current of polysilicon thin-film transistors, suitable for implementation in circuit simulators, is presented. The model includes the potential barrier at the grain boundaries, the channel length modulation and the excess current due to impact ionization. Comparison between measured output characteristics and the model shows excellent agreement over wide range of bias voltages and for devices with different gate lengths.
Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith ...
Electrodeposition of semiconducting iron oxide (Fe_2O_3) thin film was carried out from an alkaline sulphate bath. A 0.1 M ferrous sulphate (FeSO_4#centre dot#7H_2O) was complexed with 0.1 M citric acid. By addition of 1 N NaOH, pH of the solution was made alkaline (pH=9) and deposition of iron oxide (Fe_2O_3) thin films was carried out potentiostatically at room temperature (300 K). From cyclic voltametry (CV), electrochemical studies were carried out for deposition of iron oxide thin films. The XRD studies reveal that Fe_2O_3 with epsilon (#epsilon#) phase having monoclinic crystal structure is formed. By observing scanning electron microscope (SEM), it is seen that iron oxide films were homogeneous, uniform and well covered to surface of the substrate. Grain size was found to be in nanometers range from XRD analysis. The optical band gap of Fe_2O_3 thin film was estimated to be 1.90 eV. Electrical ...
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the ...
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated ...
From the results of the In-Service Inspection (ISI) measuring the wall thickness of outlet (hot-leg side) feeder pipes performed at two Canadian nuclear power plants, Point Lepreau and Gentilly-2 in 1995 and 1996, respectively, the wall thinning degradation of feeder pipes at the bend part was found to be much more severe than expected. It has been well known that such wall thinning of feeder pipes is caused by the flow accelerated corrosion (FAC) which is one of the mechanical-chemical degradation mechanisms affecting the integrity of piping systems. For the Wolsung unit 1, the wall thickness measurements have been performed during every overhaul period since 1996. The wall thinning rates at the bends of outlet feeder pipes were assessed to exceed the design value. However, for the Wolsung units 2, 3 and 4, the wall thinning rates of all the outlet feeder pipes were assessed not to exceed it. The ...
From the results of the In-Service Inspection (ISI) measuring the wall thickness of outlet (hot-leg side) feeder pipes performed at two Canadian nuclear power plants, Point Lepreau and Gentilly-2 in 1995 and 1996, respectively, the wall thinning degradation of feeder pipes at the bend part was found to be much more severe than expected. It has been well known that such wall thinning of feeder pipes is caused by the flow accelerated corrosion (FAC) which is one of the mechanical-chemical degradation mechanisms affecting the integrity of piping systems. For the Wolsung unit 1, the wall thickness measurements have been performed during every overhaul period since 1996. The wall thinning rates at the bends of outlet feeder pipes were assessed to exceed the design value. However, for the Wolsung units 2, 3 and 4, the wall thinning rates of all the outlet feeder pipes were assessed not to exceed it. The ...
We give a theoretical design for a locally resonant two-dimensional cylindrical structure involving a pair of C-shaped voids in an elastic medium which we term as double 'C' resonators (DCRs) and imbedded thin stiff bars, that displays the negative refraction effect in the low frequency regime. DCRs are responsible for a low frequency band gap which hybridizes with a tiny gap associated with the presence of the thin bars. Using an asymptotic analysis, typical working frequencies are given in closed form: DCRs behave as Helmholtz resonators modeled by masses connected to clamped walls by springs on either side, while thin bars behave as a periodic bi-atomic chain of masses connected by springs. The discrete models give an accurate description of the location and width of the stop band in the case of the DCR and the first two dispersion bands for the periodic thin bars. We then combine ...
We give a theoretical design for a locally resonant two-dimensional cylindrical structure involving a pair of C-shaped voids in an elastic medium which we term as double 'C' resonators (DCRs) and imbedded thin stiff bars, that displays the negative refraction effect in the low frequency regime. DCRs are responsible for a low frequency band gap which hybridizes with a tiny gap associated with the presence of the thin bars. Using an asymptotic analysis, typical working frequencies are given in closed form: DCRs behave as Helmholtz resonators modeled by masses connected to clamped walls by springs on either side, while thin bars behave as a periodic bi-atomic chain of masses connected by springs. The discrete models give an accurate description of the location and width of the stop band in the case of the DCR and the first two dispersion bands for the periodic thin bars. We then combine our asymptotic ...
A new thin film manufacturing method is established to add a function to glass material surface, as a new material technology which harmonizes with global environment, and is suitable for resource re-utilization and energy conservation. It is intended to develop a leading technology to promote recycling of colored glasses by applying this technical method to colored glasses. Fiscal 1998 has implemented subsequently to fiscal 1997 the following subjects in the three research items composed of a new manufacturing method of functional thin films, application of the functional thin films to colored glasses, and the comprehensive investigative studies: establishment of an industrial manufacturing method for color coating liquid and evaluation of basic characteristics of the colored functional thin films, optimization of element technology for photo-sensitive gel films by means of chemically modifying ...
Elastically deforming thin glass (thickness = 0.13 to 0.80 mm) provides an alternate method of forming a curved glass reflector which can eliminate some of the disadvantages of thicker glass. A concept is described where silvered thin glass is bonded to a steel backing to form a laminate with a reflectance greater than 93%. Subsequent bending of the flat reflector laminate to a concentrating profile produces compressive stresses throughout the glass if the laminate is properly designed. These compressive stresses enhance fracture resistance and the lamination provides protection for the silver. The design of the laminate is outlined for 0.25 and 0.51 mm thickness glass and fabrication procedures are discussed. Thermal/humidity cycling, hail impact, bond strength measurements and reflectance results are presented which demonstrate the performance capabilities of this reflector laminate concept.
Three-dimensional porous Sn thin film electrodes were prepared by electroless deposition on copper foam, then its morphology and electrochemical property were studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), electrochemical cycling test and cyclic voltammetry (CV). The porous framework and micro-holes have shown a great structure advantage in restricting severe volume changes when the Sn thin film was employed as anode for lithium-ion battery. The film electrode of sample C with an initial capacity of 676 mAh g{sup -1} showed good cycle performance displayed by retaining a capacity of 313 mAh g{sup -1} after 100 cycles.
As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.
The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).
Dopant-free Bi2Ti2O7 thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV?Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La3+ ions can act as a stabilizer of Aurivillus phase BLT and a grain?growth inhibitor in BLT thin films.
Magnetic structures and magnetocrystalline anisotropy (MCA) of tetragonal phase Fe_3Pt with an L1_2 atomic ordering in bulk and thin film are investigated by means of the first-principles full-potential linearized augmented plane-wave method. The results obtained predict that the tetragonal phase, in which the tetragonal distortion with (c/a) = 0.95 makes an asymmetry of magnetic properties along the c-axis (out-of-plane) and a-axis (in-plane), has an out-of-plane MCA. In addition, from the thin film calculations, the presence of surface is found to strongly enhance the out-of-plane MCA.
The measurement of local heat transfer coefficients is necessary to record the basic phenomena of heat transfer in thin-film apparatuses. For this reason the so-called electrochemical analogy method was developed and used for this application. The electrochemical method implies a specifically composed electrolyte which substitutes the fluid to be evaporated in the thin-film apparatus. Using the redox electrolyte (0,025 kmol/m/sup 3/ K/sub 4/Fe(CN)/sub 6/ resp. k/sub 4/Fe(CN)/sub 6/ and 2nNaOH) the viscosity was, for the first time, thickened until 0.4 Pa s by the help of hydroxyethyl-cellulose.
Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.
High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.
The present paper deals with instabilities of long homogeneous and isotropic thin shells, characterized by geometrical non-linearities and imperfections, with reference to a bent helicoidally geometrical shape of particular interest for the helicoidal steam generators tube bundle. Apparently no data exist in the literature to describe the non-linear buckling behaviour of curved thin shells under external pressure, thus, the theoretical analyses based on the classical linear elastic theory, as expected, might be inadequate to evaluate the collapse load especially if the curvature is rather large. To the purpose of determining the buckling pressure load the effects of a pre-existing level of geometrical and technological imperfection, unavoidably caused by various manufacturing processes wer...
Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.
Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.
During past two decades, the importance of rechargeable lithium cells has been emphasized and a large variety of materials has been discovered and evaluated for use as reversible cathodes and electrolytes. Materials that undergo intercalation or topochemical reactions with lithium have been investigated as candidates for cathodes in nonaqueous secondary lithium cells (1). Recent interest in researching cathode active materials has mainly focussed on crystalline transition metal chalcogenides. On the other hand, electrochemical behaviors of several amorphous materials have been reported, for example MoS/sub 2/,MoS/sub 3/,V/sub 2/S/sub 5/ (2) and LiV/sub 3/O/sub 8/ (3). However, no successful cycling behavior has been obtained except for MoS/sub 2/ in the amorphous state. This paper reports electrochemical data on rechargeable vanadate glasses in the system V/sub 2/O/sub 5/-P/sub 2/O/sub 5/.
Crystalline MnV{sub 2}O{sub 6} has been synthesized by a polymer gellation method and investigated for its physical and electrochemical properties as an anode material for Li secondary battery. The physical characterization was carried out by thermal analysis (TG/DTA), FT-IR and SEM. Structural analysis by powder XRD and spectroscopic analysis by XANES showed that the synthesized compound is MnV{sub 2}O{sub 6} with brannerite structure. The Li insertion of MnV{sub 2}O{sub 6} anode during the first charge showed a large capacity of about 1400 mAh/g, accompanied by irreversible structural transformation into amorphous material. Despite its structural transformation to amorphous during the first lithiation, subsequent cycles showed a capacity of about 800 mAh/g. This paper presents the advantage of this material over existing anode material and discusses the mechanism underlying the electrode process.
The present work is to study effects of neutron irradiation on the structure of amorphous Pb_8_0 Si_2_0 and Pd_7_7_._5 Cu_6 Si_1_6_._5 alloys by using X-ray diffraction techniques. differential scanning calorimertry (DSC) and internal friction measurements. The irradiation will produce obvious changes in the pair correlation function g(r) and radial distribution function RDF (r). The increase of crystallization temperature (Tx) and enthalpy of two specimens were found by DSC measurements after irradiation. The results of internal friction measurement show that the internal friction of the irradiated Pd_8_0Si_2_0 alloy is higher than that of the unirradiated in the temperature range of T
Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering spectra (RBS) showing the oxide film and composition isothermally ...
Catalytic reactions of 3-methylpentane and 2,3-dimethylbutane on HY, amorphous silica-alumina, and HZSM-5 have been studied at 500{degree}C. Both kinetic phenomena and product selectivities have been reported. Cracking reactions an HZSM-5 can be attributed to initiation through protonation occurring at Bronsted sites. Bimolecular processes leading to chain reaction via hydride transfer are restricted within the narrow pore pentasil zeolite. On HY and amorphous silica-alumina, initiation of cracking also occurs at Bronsted sited. No direct evidence was found for participation of Lewis acid sites on the catalyst framework itself. Following initiation, reactions on these catalysts are accelerated through a chain process occurring at Lewis sites generated by adsorption of product olefins at Bronsted sites. The resulting change in the dominant cracking mechanism is reflected in the product selectivity, illustrated here by a falling off in formation ...
Diffusion during He/sup +/, Ne/sup +/, and Xe/sup +/ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu/sub 6/Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the diffusion without irradiation. The data suggest that vacancylike ...
Diffusion during He"+, Ne"+, and Xe"+ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu_6Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the diffusion without irradiation. The data suggest that vacancylike defects play a ...
This paper describes inorganic solid electrolytes from a viewpoint of electrolytes for lithium batteries. Lithium ion conductive inorganic solid electrolytes are largely divided into crystalline and amorphous substances. Crystalline substances are known as LiI and Li3N, and also oxygen acid salt. However, when considering application to a battery, its large grain boundary resistance and electrochemical instability would be a problem. Lithium ion conductive amorphous solid electrolytes are divided into an oxide system and a sulfide system. Since most of them do not contain transition metal elements, they are stable against electrochemical reduction, and ions move isotropically in electrolyte. Therefore, ion conduction paths across the grain boundaries may be connected more easily, forming an electrolyte with low grain boundary resistance. As a result of the efforts of the authors in searching new additives substituting LiI, it was found that ...
The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ ...
In order to verify long-term reliability of amorphous alloy wound core distribution transformers, accelerated aging tests and field trials used by actual transformers were practiced. As for accelerated aging tests, short-circuit tests were added to imitate mechanical stress in operation on a utility's distribution system. As a result, even after the equivalent of 30 years, which was the normal expected transformer's life, magnetic characteristic was unchanged, so these transformers could be operated. Also, about field trials, two hundred transformers of four kinds were installed on a utility's distribution system to look into no-load characteristics. They were equipped with a mechanism to measure load current, background vibration and lightning surge current, so the influence for magnetic characteristic could be inspected. As a result, remarkable change wasn't seen even after six months.
Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi/sub 2/ was formed on amorphous Si substrates at 350 /sup 0/C, while NiSi remained stable on crystalline Si substrates even at 400 /sup 0/C. PtSi reacted with Si to form a metastable Pt/sub 4/Si/sub 9/ phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt/sub 4/Si/sub 9/ was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for PdSi on Si in the temperature range of 35--400 /sup 0/C. The ion mixing results were compared with those from thermal annealing. The importance of demixing of a thermally stable system was explored.
Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi_2 was formed on amorphous Si substrates at 350 "0C, while NiSi remained stable on crystalline Si substrates even at 400 "0C. PtSi reacted with Si to form a metastable Pt_4Si_9 phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt_4Si_9 was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for PdSi on Si in the temperature range of 35--400 "0C. The ion mixing results were compared with those from thermal annealing. The importance of demixing of a thermally stable system was explored.
High lithium-ion (Li^+) conductive garnet-structured lanthanum lithium zirconate (LLZ) solid electrolyte is prepared by incorporation of appropriate amounts of silicon (Si) and aluminum (Al). The resultant pelletized LLZ obtains total Li^+ conductivity of 6.8x10^-^4Scm^-^1 at 298K. This improved conductivity is nearly identical with the bulk Li^+ conductivity of the LLZ reported earlier, suggesting that the grain boundary resistance is effectively reduced by the incorporation of Si and Al. Microanalyses by transmission electron microscopy coupled with energy-dispersive X-ray microanalysis and electron energy-loss spectroscopy revealed the presence of amorphous Li-Al-Si-O with nano crystalline LiAlSiO4 at grain boundaries. Fast lithium-ion transport around the amorphous Li-Al-Si-O/LiAlSiO4 ...
The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).
The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO/sub 2/, Si/sub 3/N/sub 4/ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si/sub 3/N/sub 4/, but SiO/sub 2/ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO/sub 2/ and Si/sub 3/N/sub 4/ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films.
Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.
The overall objective of this research work was to prepare hydrocracking catalysts using amorphous silica-alumina (ASA) supports in combination with USY and {beta}-zeolites. Three supports: namely silica-alumina, USY and {beta}-zeolites were selected to prepare the extrudates using AP-1 as a binder, while two metal pairs: namely Ni-W and Ni-Mo were loaded on the extrudates through co-impregnation using incipient wetness technique. The catalysts were then calcined at 550C for 2h. The catalysts were tested in a fixed-bed flow reaction system for their activity, using desulfurized vacuum gas oil (DS-VGO) as a feedstock. The catalytic evaluation results of the catalysts showed that {beta}-zeolite alone and in combination with the ASA used in this study, has a potential as a support for developing heavy oil hydrocracking catalysts. A balance of weak and strong acidities of {beta}-zeolite provides control cracking, while high surface area and bigger pores of ...
A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of sublayers with bright and dark contrast. The bright contrast sublayers were amorphous layers with thickness ...
Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. {copyright} {ital 1999 American Institute of Physics.}
A combined PVD/PECVD process for the vacuum deposition of titanium containing amorphous hydrogenated carbon films is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-term stability of the plasma process has been demonstrated. Target poisoning has not been observed. We have fabricated optical selective surfaces by the deposition of a-C:H/Ti multilayers onto aluminum substrates. Even though we have not optimized layer thicknesses and stoichiometries so far, the experimental results are promising: solar absorptance {alpha}{sub S} of 0.876 and thermal emittance {epsilon}{sub 100C} of 0.061 have been achieved yielding an optical selectivity sis defined as{alpha}{sub S}/{epsilon}{sub 100C} of 14.4. Accelerated aging tests of these coatings have demonstrated their aging stability: the service lifetime is predicted to amount to more than 25 years. Raman spectroscopy has been used ...
This patent describes an energy storage device. It comprises: a working electrode, a counter electrode, electrically isolated from the working electrode; an electrolyte in contact with the working electrode and the counter electrode, and means for collecting electrical current therefrom; the working electrode consisting essentially of an amorphous metal alloy of the formula: A{sub {ital a}}M{sub {ital b}}M{prime}{sub {ital c}}, wherein A is at least one metal selected from the group consisting of Ag, Hg and Pt; M is at least one metal selected from the group consisting of Pb, Cu, Cr, Mo, W, Ni, Al, Co, Fe, Zn, Ru, Cd and Mn; M{prime} is at lest one of the elements selected from the group consisting of Ca, Mg, Ti, Zr, Hf, V, Nb and Ta; and wherein a ranges from about 0.005 to about 0.80; b ranges from 0.05 to about 0.70; and c ranges from about 0.08 to about 0.95.
Chromium containing amorphous hydrogenated carbon films (a-C : H/Cr) have been prepared by simultaneous rf plasma activated chemical vapour deposition of methane and magnetron sputtering of a chromium target. During deposition the substrates were heated (up to 300C) and DC biased (-200 and -600 V) in order to obtain films with high chemical stability. Constant temperature tests were performed at 250C in air with coatings deposited on silicon substrates. The degradation of the coatings was monitored by Raman spectroscopy and reflectance and transmission measurements. The main degradation mechanisms are discussed and the relevant parameters which improve the durability of the coatings are presented. Furthermore, the durability of solar selective, multilayered coatings which were deposited on copper sheets was investigated. Based on accelerated aging tests at different temperature loads in air (at 220C, 250C and 300C) and in a humid environment (80C sample temperature ...
The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.
We have performed molecular dynamics simulations of radiation damage in fused silica. In this study, we discuss the role of successive cascade overlap on the saturation and self-healing of oxygen vacancy defects in the amorphous fused silica network. Furthermore, we present findings on the topological changes in fused silica due to repeated energetic recoil atoms. These topological network modifications consistent with experimental Raman spectroscopic observation on neutron and ion irradiated fused silica are indicators of permanent densification that has also been observed experimentally.
Reinforced (heterogel) silicate materials containing an amorphous and a crystalline phase are being used more and more industry. Such systems are energetically unsaturated and therefore promising for use in catalysts. The authors used two reinforced materials as supports: an aluminosilicate containing a zeolite (the cracking catalyst, tseokar) and asbestos-containing aluminosilicate. The active component was introduced by impregnation, and this was followed by heat treatment during which the chemical composition and porous structure were formed. The impregnating mixture consisted of solutions of potassium sulfate and vanadate of the required concentrations. The testing shows that reinforced heterogel systems are promising as support materials for sulfuric acid catalysts.
The mechanism of abrupt increase of the giant magneto impedance (GMI) ratio in the ion irradiated Co-based amorphous ribbon has been investigated. The grazing incident X-ray diffraction and transmission electron microscope were used to characterize the samples before and after ion irradiation. The GMI-ratio considerably increased in the ion irradiated samples and the GMI response showed strong dependence on the driving frequencies. The Barkhausen noise (BN) signals are increased for the Ar ion irradiated sample with dose of 1x10^1^7 ion/cm^2. The results are interpreted in terms of GMI variation associated with domain wall dynamics.
We analyse several amorphous Pdsub(1-x)Sisub(x) alloys obtained by simulation. The metalloid atoms environments can be studied in the same way as that described in the first paper of this series. The main part of this paper is devoted to the evolution of the density as a function of the concentration. In order to interpret the values obtained by the simulation, we develop two models: the first one assumes a complete disorder: the second one, which is shown to be better, assumes a tendency to a local ordering: Si atoms are assumed to have only Pd neighbours.
A new analysis is developed for long secondary photocurrent transients which gives the distribution of trapped holes in valence band tail states. Thermally assisted tunneling to dangling bonds is implicated as the rate limiting step in hole-recombination. Light-soaking causes the energetically deeper hole traps with the longer residence times to be lost first and in the same number as would be expected for the increase in dangling bonds; This result supports a model which has hole trapping in valence tail states as a precursor to light induced dangling bonds.
Lithium orthosilicate (Li_4SiO_4) powder was synthesized by the solid-state reaction of lithium oxide with amorphous silica, and the effects of fabrication parameters on the structural characteristics of the product were investigated. Processing considerations such as milling media, drying technique, calcination time and temperature, pressing behavior, sintering time and temperatures, and impurity concentration were addressed. The initial powder particle size was observed to be important in achieving high sintered density, with densities as high as 98% TD achieved with a particle size of approximately 1 #mu#m. 9 refs., 6 figs.
As concern regarding global environmental problems such as the greenhouse effect and acid rain has increased, so too has the demand for commercially viable solar cells as a clean energy source. Interest in amorphous silicon (a-Si) solar cells has been particularly high, due to their low cost. Technological developments in the field of a-Si solar cells are discussed from the viewpoints of fabrication process, materials, and cell structures. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are mentioned
Polytetrafluoroethylene was obtained by radiation induced polymerization of tetrafluoroethylene in acetone at 195 K. An average diameter of the products was very small compared with commercial one; it was about 0.3 micro-meters. The yield was reached to 100% with a dose of 4 kGy. The crystallinity of the products is decreasing with increasing dose. The products become amorphous, for higher irradiation doses. It was found that PTFE obtained by irradiation of TFE in acetone at 195 K has branching structure. This was demonstrated by means of "1"9F MAS NMR. (Author)
This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.
New lithium ion composite electrolyte, LiI?Li2S?La2O2Sm (m=1, 2) was synthesized from the binary Li2S?LaOI system through solid state reaction. The lithium ion conductive property was investigated by AC impedance spectroscopy. And the highest conductivity of the obtained electrolyte at room temperature was found to be 3.0?10?6?S cm?1. The notable ionic conduction was attributed to the in situ formed amorphous LiI.
On the basis of observations of the JTEC team, it appears that Japanese universities and research institutes are leading long-term R&D thrusts for development of new materials casting technologies. Significant efforts include amorphous metals, intermetallics, application of MHD in continuous casting of steel, and energy efficient furnace technology. Industrial R&D seems focused more on process improvements than on new product technologies, but significant efforts in new cast materials included cast metal matrix composites, materials substitutions for thinner wall products, and advanced ceramic products for foundry industry applications.
The characteristics of the temperature dependence of the upper critical magnetic field, Hc2(T), of structurally inhomogeneous superconductors (e.g., ternary molybdenum chalcogenides, A-15 compounds, transition metal alloys, and amorphous films) are investigated analytically. The MWGH equation for Hc2(T) is generalized to the case of weakly inhomogeneous systems with a characteristic inhomogeneity scale much smaller than the effective coherence length. It is shown that an increase in the dispersion of the diffusion coefficient leads to an increase in the slope and width of the linear section of the Hc2(T) curve. 11 references.
Free Electron Laser (FEL) with wide wavelength tunability has been developed and used for various applications. We report the structural-changes in P-ion-implanted diamond when we can achieve resonant excitation of the vibrations of specific bonds in the lattice of target (P-C) by using FEL. The change of property was analyzed by SIMS and Raman spectroscopy. After 5.8 #mu#m-FEL irradiation, we observed the crystallization of amorphous structure which was induced by P-ion-implantation. These results indicated the FEL annealing of diamond at room temperature. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)
The Cu- and Ni-based bulk metallic glass matrix composites were fabricated by spark plasma sintering of a mixture of gas-atomized metallic glass powders and ductile brass powders. The brass powders added for the enhancement of plasticity are well distributed in the matrix after consolidation. The matrix of the composite materials remains as a fully amorphous phase after consolidation process. With increasing the brass content, the level of plasticity strain increased, although the level of strength decreased. The successful consolidation of metallic glass matrix composite with high density was attributed to viscous flow in the supercooled liquid state during spark plasma sintering.
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.
A simple method allowing easy calculation of the spatial damage energy distributions for ion-implanted materials is presented. The direct procedure takes account of the variation with depth of the lateral spreading of implanted ions, as well as the effects of energy transport by the recoiling target atoms. The subsequent computer program LUPIN-3D provides three-dimensional damage distributions and allows the construction of damage energy mappings. Various substrates of technological interest are investigated and several fields of application of the calculation are envisaged. The density of cascades can therefore be determined and heterogeneous amorphization models can be implemented. (orig.).
Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output dependence on the energy ...
Testes of jellyfish Phialidium gregarium were fixed in 2 per cent OsO4 in Veronal-acetate buffer at pH 7.4. Thin sections showed that in young spermatids the spindle fibers...Full Text Available
Most palladium thin film based hydrogen gas sensors have response and recovery times that are too long to make them useful in vehicular and stationary gas leak detection applications. In contrast, a palladium-silver thin film based microcantilever (MC) hydrogen gas microsensor is reported herein with near ideal response characteristics for use in these hydrogen economy related applications. Specifically, 3-10 second response and recovery times have been measured for these sensors in contrast to previous sensor response measurements of several to tens of minutes using Pd thin film and MC based sensing techniques. The much reduced response times observed in the present study are attributed to a wet chemical Pd-Ag thin film deposition technique and a gas conditioning protocol that produces a highly nanostructured, porous film that rapidly adsorbs and desorbs H2, allowing rapid equilibration with the H2 ...
Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film was of the order of 10"5 cm"-"1. The optical band gap of films was found to be 2.26 and 2.20 eV for the films deposited using ...
Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.
Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.
Catch is a mechanical state occurring in some invertebrate smooth muscles characterized by high force maintenance and resistance to stretch during extremely slow relaxation. During catch, intracellular...Full Text Available
Two manufacturing processes have been developed for fabricating PLZT bonded lens assemblies (BLA's) for the USAF EEU-2/P Thermal/Flash Protective Goggle. One process utilizes thin Sylgard spacers which remain in the BLA to establish bond thickness between...
This report is a continuation of the former efforts to elucidate the behavior of ferrocement concrete in static and dynamic stress fields. The influence of various reinforcements on pre and post cracking of thin sections forms the main topic of this repor...
External application of auxin and cytokinin is required for the formation of flower buds on thin-layer tissue explants of Nicotiana tabacum cv Samsun. Interaction between both plant...Full Text Available
Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...
During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...
In this paper, we present experimentally determined reflection factors of mirrors based on the depleted uranium and dependence of reflection factor on time of presence of samples on air.
The curvature elastic modulus (bending stiffness) of stearoyloleoyl phosphatidylcholine (SOPC) bilayer membrane is determined from membrane tether formation experiments. R. E. Waugh and R. M. Hochmuth...Full Text Available
Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional structure. While NbTe{sub 2} films have been realized by sputtering, it is the first ...
A thin film microoxidation test utilizing the concept of the Lubricant Stability Map has been used to study the effect of temperature on deposit formation by lubricants on upper piston locations of low heat rejection engines. The stability maps were established for two formulated lubricants in this study. These two lubricants were also evaluated in a series of engine tests with various piston temperatures. The deposition phenomena observed in the engine tests have been adequately simulated and described by the stability maps. It is concluded that lubricants at upper piston locations are under a thin film condition similar to that achieved by the thin film microoxidation test. The deposit formation trend is determined by the volatility, thermal stability, and oxidative stability of the base stock. Additives have little effect on deposit formation at very high temperatures. A combined consideration of all competing reaction ...
Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...
An image slicing spectrometer (ISS) for microscopy applications is presented. Its principle is based on the redirecting of image zones by specially organized thin mirrors within a custom fabricated...Full Text Available
BackgroundPrevious research has demonstrated that exposure to images depicting the thin female ideal has negative effects on some females' levels of body dissatisfaction. Much of...Full Text Available
An attempt is made to augment the heat transfer efficiency by means of inserting an oscillating thin plate into a tube of the shell and tube heat exchanger. However, the heat transfer augmenting mechanism has not been fully explained. To elucidate this heat transfer augmenting mechanism, an investigation was given on the heat transfer characteristics of a tube inlet at its preliminary run area when a double-hinged oscillating thin plate is inserted in the inlet. As a result of the experiment, the heat transfer augmentation in the tube as a result of inserting the double-hinged oscillating thin plate was found effective when the preliminary inlet run area is treated as the object. However, in comparison of the effect with the heat transfer in a fully developed turbulent region, it was {eta}- 1. The result thus obtained explains that no sufficient turbulence can be obtained when the deflection angle of the first oscillating ...
The aim of this work was to study the possibility of producing a fast switching optical thin film device to react to laser radiation in the visible/near infrared region of the spectrum. The switching mechanism was to be thermally driven. A computer program was written to enable the effects of changes of the refractive index of a component of a multilayer thin film stack to be modelled. Attempts to use the phase transition in vanadium dioxide were unsuccessful because, in the spectral region of interest, the 'open-state' absorption was too great. A class of materials known as 'the bronzes' was identified as being potentially useful. Attempts were made to produce thin films of bronze compounds of vanadium, tungsten and molybdenum by the techniques of conventional thermal evaporation and laser ablation for further studies. The former technique appeared to suffer from problems of decomposition of the source material. The latter ...
international vehicles, control centers, and ground support personnel. ... consists of thin membranes made from a polymer-based film and ..... (including airplanes and submarines), environmental monitoring, and control ...... sciences can use it to analyze the birth and death of stars, the formation of solar ...
Certain applications are described of radionuclide X-ray fluorescence analysis in the ore dressing industry, in the manufacture of building materials, in metallurgy, pharmacy, in the chemical, photographic and paper industries, in space exploration, in archeology and for measuring the thicknesses of thin layers of coatings. (ES).
Effect of low-frequency pulsating magnetic field on the microstructure and magnetic properties of amorphous alloy Fe{sub 78}Si{sub 9}B{sub 13} were investigated. The temperature rise induced by the treatment was measured by a non-contact infrared thermometer. The crystallization behavior and microstructure of specimens were studied by Moessbauer spectroscopy and transmission electron microscope (TEM). Magnetic properties of the specimens were investigated by alternating gradient magnetometer (AGM). The results show that the low-frequency pulsating magnetic field can promote the single-phase crystallization of amorphous alloy Fe{sub 78}Si{sub 9}B{sub 13}. The frequency, f of applied field is from 10 to 40 Hz, magnetic field, H is from 0.02 to 0.04 T and treatment duration, t is from 180-300 s. The volume fraction of crystallization phase ({alpha}-Fe(Si), the grain size, 2-10 nm) is 3-7%. The temperature rise less than 7 deg. C. Magnetic ...
We present differential scanning calorimetry (DSC), X-ray diffractometry, in situ Moessbauer spectroscopy (MS), and transmission electron microscopy (TEM) studies in Metglas ribbons subjected to different heat treatments. The temperature evolution of the hyperfine field H_h_f(T) and the Curie temperature (T_c) of the amorphous phase are determined. The magnetic field originally present in the amorphous phase has a 'normal' behavior, in the sense that it can be described by the Weiss molecular field theory. The total angular momentum of the iron atoms turns out to be 5/2 and this implies Fe"3"+ in which the electronic spins are uncoupled. When the samples are maintained near T_c (#approx#673 K), three new magnetic phases are detected in the Moessbauer spectra, indicating an onset of a crystallization process well below the first crystallization temperature (T_X_1), as determined by DSC (#approx#820 K). The magnetic behavior of these phases is ...
Full text: It was recently-established for hexagonal barium ferrite-industrially important magnetically hard material that refinement of the crystallite dimensions into the nanoscale regime, typically #<=# 10 nm, leads after heat treatment at temperatures 800-1000 deg C to significant coercivity increase of up to 6.5 kOe (#approx#3-4 times) with saturation magnetisation values of 50-55 emu/g (#approx#95% of bulk at room temperature). High-energy mechanochemical processing has been applied to prepare nanostructural (nanocrystalline-amorphous) composites. High resolution electron microscopy studies reveal that the enhancement of the final magnetic properties was due to formation of magnetically noninteracting #approx#l,#mu#m Ba-ferrite particles with 5-10 nm amorphous surface layer - depending on annealing parameters. Similar situation was established also for ball milled strontium ferrite (SrFe_1_2O_1_9) powders where short annealing 4 h at ...
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface ...
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface ...
Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from ...
Amorphous materials in the system xLi{sub 2}S{center_dot}(100-x)SiS{sub 2}, where x ranged from 50 to 70 mol %, and (100-y) (0.6Li{sub 2}S{center_dot}0.4SiS{sub 2}){center_dot}yLi{sub 4}SiO{sub 4}, where y ranged from 0 to 10 mol %, were synthesized by mechanical milling of crystalline starting materials, Li{sub 2}S, SiS{sub 2} and Li{sub 4}SiO{sub 4}. At the compositions with large amounts of Li{sup +} ions, a part of crystalline Li{sub 2}S used as a starting material remained in the milled powder samples. It was found that the milled powder samples in both systems obtained by mechanical milling exhibited high conductivities in the order of 10{sup -4}S{center_dot}cm{sup -1} at room temperature in spite of the presence of small amounts of Li{sub 2}S crystals. The conductivity values of the pelletized samples of xLi{sub 2}S{center_dot}(100-x)SiS{sub 2} powders maximized at the composition of about x=60. On the other hand, the conductivities in the composition range ...
The authors present the emitter efficiency results for the thin film 25 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) selective emitter from 1000 to 1700 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns) and used to calculate the radiative efficiency. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on temperature and experimental results indicate an optimum temperature (1650 K for Ho YAG) for thermophotovoltaic (TPV) applications.
Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.
This paper presents a prototype of an entirely inorganic lithium ions battery cell. LiCoO{sub 2} thin film cathodes and Li{sub 4/3}Ti{sub 5/3}O{sub 4} thin film anodes have been deposited on Li{sub 3x}La{sub 2/3-x}TiO{sub 3} sintered solid electrolyte pellets and the performances of these battery cells have been tested. (J.S.) 5 refs.
Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.
The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.
The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).
We show that the eigenvalue equations describing a cylindrical ideal magnetophydrodynamicsw (MHD) plasma interacting with a thin resistive wall can be put into the standard mathematical form: ??? = ??? ?. This is accomplished by using a finite element basis for the plasma, and by adding an extra degree of freedom corresponding to the electrical current in the thin wall. The standard form allows the use of linear eigenvalue solvers, without additional interations, to compute the complete spectrum of plasma modes in the presence of a surrounding restrictive wall at arbitrary separation. We show that our method recovers standard results in the limits of (1) an infinitely resistive wall (no wall), and (2) a zero resistance wall (ideal wall).
A liquid-fillet is formed in front of a rotor blade in the cylinder of a horizontal agitated thin-film evaporator. Its thickness varies due to the gravity while the blade revolves inside the cylinder. In the critical condition, the amplitude of the oscillation becomes infinite and the phase advances 180 degrees. Prior to the critical condition, the experimental data agrees fairly well with the predictions. Near the critical condition, the amplitutde increases and the phase advances 60 degrees. In other words, the transition to the critical condition occurs continuously. (6 figs, 1 ref)
Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be ...
The half-metallic Heusler alloy Ni{sub 2}MnIn is of high interest for use in spin electronics since at the Ni{sub 2}MnIn/InAs interface a spin polarization of 100% is predicted. We prepare high-quality thin films of 20-60nm thickness by co-evaporation and DC magnetron sputtering. Point-contact Andreev reflection spectroscopy yields a spin polarization of up to 54%. By spectral generalized magneto-optical ellipsometry, the dielectric and magneto-optical properties are determined and ferromagnetic behavior below the Curie temperature T{sub C}=318K is proved.
Alpha particle confinement is necessary for ignition of a D-T tokamak fusion plasma and for first wall protection. Due to high radiation backgrounds and temperatures, scintillators and semiconductor detectors may not be used to study alpha particles which are lost to the first wall during the D-T programs on JET and ITER. An alternative method of charged particle spectrometry capable of operation in these harsh environments, is proposed: it consists of thin foils of electrically isolated conductors with the flux of alpha particles determined by the positive current flowing from the foils. 2 refs., 3 figs.
Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes therebetween. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them.
One of the main problems related to optical thin film materials used in high power laser environments is the catastrophic damage caused to them due to laser irradiation. While the influence of ion bombardment on the optical properties of oxide thin films is now a well understood subject, the morphology and crystalline behaviour of these films under ion incidence is not so well studied. Hence, it is of great importance to investigate the effects of ion bombardment during growth on the microstructure and crystalline behaviour of oxide materials.
Complete text of publication follows. According to the new European regulations (Restrictions of Hazardous Substance Directive), there is an emerging demand for environmental friendly metal treatments instead on formerly used chromate conversion coating technique. The aim of the present investigations was to characterise and compare silicon containing protective thin layers on roughened galvanized steel surfaces (with average roughness of 0.7 microns), using FTIR microscopy and imaging techniques. The silicon containing coatings were produced either by Chemical Vapour Deposition (CVD) or by wet chemical treatment using liquid silane. FTIR techniques offer new possibilities in the characterisations and chemical mapping of differently coated thin films, besides SEM+EDS, AFM, nanoindentation, XPS measurements (P. Nemeth et al., Materials Science Forum, 589 (2008) 433-438). All measurements were carried out by a Varian FTS-7000 spectrometer with a ...
Three kinds of surface modifications were carried out on LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-films to improve the charge and discharge characteristics of LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} positive electrodes. Among them, Zr(OBu){sub 4}/poly(methyl methacrylate) (PMMA)-treated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrodes showed charge and discharge efficiency of 80-84% in the first cycle, which was much higher than that for an untreated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrode (73%). The values of the charge and discharge efficiency were still higher than that for an untreated electrode after the 30th cycle. The charge and discharge curves gave two plateaus at around 4.72 and 4.76 V, which were very similar to those for the untreated electrode. Ac impedance spectroscopy revealed that the surface film resistance should not increase by Zr(OBu){sub 4}/PMMA treatment. XPS measurements suggest that a ...
The production and characterisation of thin films made from molybdenum sulphide, molybdenum selenide, tungsten sulphide and tungsten selenide are described. The electronic properties of the thin films were examined by Hall measurements and by thermal sensors. For the MoSe[sub 2] films, the majority of the samples were n-conducting and p-conduction was only found for a few examples. All the other films (MoS[sub 2], WS[sub 2], WSe[sub 2]) were p-conducting. The electrical transport properties of the thin films are comparable to those of single crystals. With these thin films as absorber materials, it was possible for the first time to produce the polycrystalline solid n-ZnO/p-MoSe[sub 2], n-ZnO/WSe[sub 2], n-ZnO/WS[sub 2]- and n-ITO/WS[sub 2] solar cells. In spite of not yet optimized diode geometry (lateral build-up), a maximum short circuit current of I[sub SC] = 18 mA/cm[sup 2] was achieved for the ...
Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of ...
The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly ...
Fe{sub x}Zn{sub 1-x} alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K{beta}/K{alpha} x-ray intensity ratios of Zn and Fe in Fe{sub x}Zn{sub 1-x} thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi {sup 241}Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in Fe{sub x}Zn{sub 1-x} thin films for different values of x. ...
FexZn1-x alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K?/K? x-ray intensity ratios of Zn and Fe in FexZn1-x thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi 241Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in FexZn1-x thin films for different values of x. The reason for this change may be that the ...
The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced from {approx}10{sup 6} before aging. Therefore, the enhanced ...
The present study was carried out during two successive seasons of 2005 and 2006 seasons on"Montakhab El-Kanater"guavas and"Hachiya"persimmons.two different experiments were studied, the first one for pre harvest and second post harvest. Regarding pre harvest experiment,hand or chemical flower thinning by urea or ethrel and date of fruit picking (maturity) were evaluated on both guavas and persimmons.All flower thinning treatments increased fruit set,total yield,average fruit weight and decreased fruit abscission.However,a great effect on fruit quality and chemical compositions were also found with flower thinning treatments. Chemical flower thinning was more effective than hand thinning in improving yield and quality in "Montakhab El-Kanater"guavas and "Hachiya"persimmons. However,early maturation(120 and 150 days for guava and persimmon respect.) produced poor fruit ...
Regional cortical thickness was evaluated using CIVET processing of 3D T1-weighted images (i) to compare the variation in cortical thickness between 33 participants with fetal alcohol spectrum disorders (FASD) aged 6-30 years (mean age 12.3 years) versus 33 age/sex/hand-matched controls, and (ii) to examine developmental changes in cortical thickness with age from children to young adults in both groups. Significant cortical thinning was found in the participants with FASD in large areas of the bilateral middle frontal lobe, pre- and post- central areas, lateral and inferior temporal and occipital lobes compared to controls. No significant cortical thickness increases were observed for the FASD group. Cortical thinning with age in a linear model was observed in both groups, but the locations were different for each group. FASD participants showed thinning with age in the left middle frontal, bilateral precentral, bilateral ...
Corrosion characteristics of Al and Cu thin films have been studied in cyclic fog tests using tap water fog and fog created with 0.1% NaCl solution in tap water. Likewise, their corrosion features have been analyzed in continuous immersion testing in the laboratory in distilled water, tap water, in 0.1% NaCl and 3.5% NaCl solutions in distilled water. The corrosion potentials and the corrosion currents of these thin films change and reach steady state values after some time. However, steady state is not realized in 3.5% NaCl solutions. The corrosion current density data have been used to calculate lifetime of 1 {mu}m thick thin films of Al and Cu in the various tests, and assuming that the fog test data would hold under normal exposure conditions, life spans for these thin film sensor elements in actual exterior exposure have also been calculated. According to estimates, an Al-TF of about 1 {mu}m would ...
Various methods for storing hydrogen have been examined in an effort to find ways to store hydrogen in increasingly smaller volumes with decreasing weight of the whole hydrogen storage system. Metal hydrides, in which hydrogen is chemically bound to a metal atom, are considered to be very promising candidates for hydrogen storage because they have high gravimetric and volumetric storage capacities. This study investigated the effect of different magnesium (Mg) and aluminium (Al) ratios on the absorption and desorption properties of thin films. Neutron reflectometry (NR) was used in this study to better understand the absorption and desorption properties of commercially promising hydrogen storage materials. The large negative scattering length of hydrogen atoms changes the reflectivity curve substantially, so that NR can determine the total amount of stored hydrogen as well as the hydrogen distribution along the film normal, with nanometer resolution. In order to ...
Shocked quartz minerals from the Cretaceous-Tertiary (K/T) boundary and impact craters have been mainly discussed from distribution of optical directions, mean optical refractive index, and X-ray data (1). The purpose of the present study is presentation of the detailed mineralogical data of shocked quartz found in the K/T boundaries and terrestrial impact craters (2,3,4,5). X-ray powder diffraction pattern of shocked quartz aggregate reveals that all Xray peaks are split into major three peaks composed of low-density quartz (LQ), normal quartz (Q), and shocked quartz with high density (SQ). X-ray peaks of (110), (200), (201), (202), and (211) in the hexagonal cell are also split into many peaks. The X-ray intensity among LQ, Q, and SQ phases indicates that the SQ phase shows 36% to 53% in six K/T boundary samples (5). The relative X-ray intensity ratio of shocked quartz to standard rock crystal decreases into 13% to 37%, which suggests that shocked quartz materials contain major parts ...
Many investigations of anode materials for lithium-ion secondary batteries have been carried out in order to obtain batteries of higher capacity and energy density. Recently, SnO-based glasses, which were prepared by the usual melt quenching technique, have been proposed as a new anode for lithium-ion secondary batteries by Idota et al. It has been reported that the capacity per unit weight was higher than 600 mAh g{sup {minus}1} and the capacity per unit volume was higher than 2,200 mAh cm{sup {minus}3}, values which are almost double those for carbon materials used as anodes of commercial lithium-ion batteries at present. Thus SnO-based glasses have attracted much interest as high-capacity anode materials for lithium-ion secondary batteries. Amorphous materials in the system SnO-B{sub 2}O{sub 3}-P{sub 2}O{sub 5}, with or without the addition of Li{sub 2}O, were synthesized by mechanical milling treatment of starting oxides in a dry N{sub 2} atmosphere at room ...
Since the mid-1990s, nuclear power plants in Korea have experienced wall thinning, leaks, and ruptures of secondary side piping caused by flow-accelerated corrosion (FAC). The pipe failures have increased as operating time progresses. In order to prevent the FAC-induced pipe failures and to develop an effective FAC management strategy, KEPRI and KOPEC have conducted a study for developing systematic FAC management technology for secondary side piping of all Korean nuclear power plants. As a part of the study, FAC analyses were performed using the CHECWORKS code. The analysis results were used to select components for inspection and to determine inspection intervals on each nuclear power plant. This paper describes the introduction of the FAC analysis method and the wall thinning trend analysis results by reactor type, system, and water treatment amine. This paper also represents the site application feasibility for secondary side piping ...
There is a growing interest in using {sup 242m}Am as a nuclear fuel. The advantages of {sup 242m}Am as a nuclear fuel derive from the fact that {sup 242m}Am has the highest thermal fission cross section. The thermal capture cross section is relatively low and the number of neutrons per thermal fission is high. These nuclear properties make it possible to obtain nuclear criticality with ultra-thin fuel elements. The possibility of having ultra-thin fuel elements enables the use of these fission products directly, without the necessity of converting their energy to heat, as is done in conventional reactors. There are three options of using such highly energetic and highly ionized fission products. - Using the fission products themselves for ionic propulsion. - Using the fission products in an MHD generator, in order to obtain electricity directly. - Using the fission products to heat a gas up to a high temperature for propulsion purposes. In this ...
Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 nm with a fluence of 2 J/cm{sup 2}. The surface quality of the thin lysozyme films of different thickness deposited on 7 mm x 7 mm Si-<1 0 0>-wafers was investigated with scanning electron microscopy and atomic force microscopy. Already at comparatively low thickness, {approx}20 nm, the substrate is covered by intact lysozyme molecules and fragments. The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD))
In this study, WO{sub 3} thin films were grown on glass substrates using an aqueous solution containing tungstate (NH{sub 4}){sub 2}WO{sub 4} as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at T{sub s} = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra in ...
In this study, WO3 thin films were grown on glass substrates using an aqueous solution containing tungstate (NH4)2WO4 as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at Ts = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T(?) and reflectance R(?) spectra in 300-1800 nm domain. The refractive and absorption ...
In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped ...
In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped Thin Film ...
A method is described for converting radioactive alkali metal into a low level disposable solid waste material. The radioactive alkali metal is atomized and introduced into an aqueous caustic solution having caustic present in the range of from about 20 wt % to about 70 wt % to convert the radioactive alkali metal to a radioactive alkali metal hydroxide. The aqueous caustic containing radioactive alkali metal hydroxide and CO{sub 2} are introduced into a thin film evaporator with the CO{sub 2} present in an amount greater than required to convert the alkali metal hydroxide to a radioactive alkali metal carbonate, and thereafter the radioactive alkali metal carbonate is separated from the thin film evaporator as a dry powder. Hydroxide solutions containing toxic metal hydroxide including one or more metal ions of Sb, As, Ba, Be, Cd, Cr, Pb, Hg, Ni, Se, Ag and Tl can be converted into a low level non-hazardous waste using the ...
The Raywell Process Plants unit, which reclaims a wide range of organic solvents, including chlorinated hydrocarbons, is based on thin film evaporation and distillation rather than steam distillation, thus reducing the risk of contamination by water. Henry Balfour and Co.'s Pfaudler Solvent Recovery System gives 96% or better solvent recovery and produces a near-solid waste suitable for landfill disposal; like the Raywell system, it uses a mechanically wiped thin-film evaporator. Midland Oil Refineries uses sa Raywell thin-film evaporator for recovery of waste lubricating oils rather than the conventional sulfuric acid/clay treatment, thus avoiding formation of sulfuric acid sludge waste. The Henry Balfour Bioenergy anaerobic digestion system gives yields of fuel gas with 65-75% methane as high as 0.8 cu m/kg BOD; it achieves 95-98% BOD removal with no pH control or nutrient addition because it separates solids ...
In this paper the authors present the first emitter efficiency results for the thin film 40 percent Er-1.5 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) and 25 percent Ho YAG selective emitter at 1500 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns). Emitter efficiency and power density are significantly improved with the addition of multiple rare earth dopants. Predicted efficiency results are presented for an optimized (equal power density in the Er, (4)I[sub 15/2]-(4)I[sub 13/2] at 1.5 microns, and Ho, (5)I[sub 7]-(5)I[sub 8] at 2.0 micron emission bands) Er-Ho YAG thin film selective emitter.
Dopant-free Bi{sub 2}Ti{sub 2}O{sub 7} thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV-Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La{sup 3+} ions can act as a stabilizer of Aurivillus phase BLT and a grain-growth inhibitor in BLT thin films.
Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10{sup -5} S/cm at room temperature for the film annealed at 800 deg. C for 30 min.
Li_1_._3Al_0_._3Ti_1_._7(PO_4)_3 thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li_1_._3Al_0_._3Ti_1_._7(PO_4)_3 thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10"-"5 S/cm at room temperature for the film annealed at 800 deg. C for 30 min.
Vertical thin film evaporators have been used to concentrate and dry solutions because their rotating swing blades prevent scale from being deposited on the heated surfaces. Powdering capacity of the vertical thin film evaporator was examined experimentally for drying applications of radioactive liquid waste generated from nuclear power plants. As a result, it was found that the powdering capacity increased with the blade rotation, changing significantly in the low ratational region and scarcely in the high rotational region. The powdering capacity in the high rotational region was restricted by the lack of heat flux which was theoretically evaluated for the concentrating process. As the critical factor in the low rotational region was not clear, a visual test apparatus was made to observe flow patterns in the evaporator, and a powdering model was obtained. This model showed that powdering process was obstructed when the liquid film lost its ...
Vertical thin film evaporators have been used to concentrate and dry solutions because their rotating swing blades prevent scale from being deposited on the heated surfaces. Powdering capacity of the vertical thin film evaporator was examined experimentally for drying applications of radioactive liquid waste generated from nuclear power plants. As a result, it was found that the powdering capacity increased with the blade rotation, changing significantly in the low ratational region and scarcely in the high rotational region. The powdering capacity in the high rotational region was restricted by the lack of heat flux which was theoretically evaluated for the concentrating process. As the critical factor in the low rotational region was not clear, a visual test apparatus was made to observe flow patterns in the evaporator, and a powdering model was obtained. This model showed that powdering process was obstructed when the liquid film lost its ...
ObjectivesThe overall scientific aim of this project is, through development of an appropriate numerical modelling tool, to identify and investigate the mechanisms that control the current observed rapid thinning and acceleration of Greenland outlet glaciers and to investigate their likely future behaviour in the context of climate warming. This aim is addressed through the four major specific objectives below. These objectives build on each and therefore the order of priority is driven by the order in wh [continued...]DescriptionCurrently, the Greenland ice sheet is undergoing rapid changes in the coastal regions which have been attributed to a general warming trend to the regions climate over the last decade. Several of the narrow and fast flowing outlet glaciers that drain the ice sheet into the sea are observed to have accelerated their flow and thinned. For instance, Jakobshavn Isbrae on the West coast of Greenland has almost doubled its ...
Herein, we report engineering of nanostructured p-CuIn3Se5/n-CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu^+, In^3^+ and Se^2^- ions in alkaline medium. The uniform deposition of heterojunction thin films is achieved by optimizing the pH, temperature and molarity of the reactant bath. The as-deposited thin-films were annealed at 200^oC in air for 1h and further characterized for structural, optical and electrical properties using UV-Vis spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Hall effect for type of conductivity, and I-V measurement to investigate the char...
We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate substrate for optical, plasmonic and sensor related ...
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during high temperature ...
As the U.S. Department of Energy's (DOE's) Solar Energy Technologies Program initiates new cost-shared solar energy R&D under the Solar America Initiative (SAI), it is useful to analyze the experience gained from cost-shared R&D projects that have been funded through the program to date. This report summarizes lessons learned from two DOE-sponsored photovoltaic (PV) projects: the Photovoltaic Manufacturing Technology/PV Manufacturing R&D (PVMaT/PVMR&D) project and the Thin-Film PV Partnership project. During the past 10-15 years, these two projects have invested roughly $330 million of government resources in cost-shared R&D and leveraged another $190 million in private-sector PV R&D investments. Following a description of key findings and brief descriptions of the PVMaT/PVMR&D and Thin-Film PV Partnership projects, this report presents lessons learned from the projects.
While levels of weight bias vary among individuals, it is not clear why one person possesses stronger anti-fat attitudes than another person. This investigation examined whether individual differences commonly associated with greater anti-fat bias are also associated with a greater preference for thinness among people of varying levels of weight. Young adults (62% women; 84% Caucasian) recruited from psychology classes (N=308) rated four male and female figures with approximate BMIs of 18.5, 25, 30, and 40, on measures of dislike and personality characteristics and completed measures assessing weight controllability, attitudes toward the obese, and perceptual reliance. Greater negative attitudes, weight controllability beliefs, and perceptual reliance were positively associated with greater dislike and negative personality attributes among obese/severely obese figures, but inversely related among low normal weight figures. Individuals who judge others based on ...
The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the ...
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of ...
The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for extremely thin film and so forth, it has also demerits like difficulty to response the ...
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics demonstrated that ...
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics demonstrated that ...
Assessment of the oil shale resources in Kentucky has continued with 75 NX cores available where the oil shale crops out or is overlain by relatively thin cover in the area from Estill County westward to Bullitt County. In this 14 county area, the total black shale section thins across the crest of the Cincinnati arch and changes stratigraphically from that characteristic of the Ohio Shale in Estill County to that of the New Albany Shale in Bullitt County. Despite this stratigraphic transition the two high-carbon zones (greater than 8.0% carbon) can be traced across the arch. As the traverse is followed from the east, the intervening low-carbon zones thin such that at the crest of the arch, there are areas where the entire section of black shale contains more than 8% carbon. Then upon leaving the crest the two high-carbon zones separate again with one remaining at the very top of the section and one in the lower part. In ...
Theoretical work supported by this grant has lead to the concept of the specific pinning force Q and the development of new methods to sum elementary interaction forces to find Q. Pinning due to changes in transition temperature or thermodynamic critical field in thin layers (e.g., a grain boundary), is greatly reduced due to the proximity effect and the stress field interaction due to the dislocations in the grain boundary has been shown to be negligible. The crystalline anisotropy (CA) and electron scattering (ES) interactions have been computed for the first time for an arbitrary boundary. Experiments on niobium bicrystals, polycrystalline niobium thin foils doped with oxygen, lead-bismuth alloy thin films and lead-bismuth alloy films in which either lead or thallium has been allowed to diffuse down the grain boundaries and out into the grains provide evidence that confirms the predictions of the theory. These results ...
To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...
This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra for thin-film samples composed of ...
The initial thichnesses of feeder pipes in Wolsung-1 are analyzed to estimate status of feeder thinning. The assumption of the estimation is that feeders of same type are decreased to same thickness by bending and have same thickness after bending. Following three methods are used to estimated thicknesses of the remains besides 52 feeders with initial thickness data in Wolsung-1. First is the estimating initial thickness of same type in Wolsung-1 from initial thickness data of Wolsung-2, -3 and -4. Second is the finding average value of each type from 52 initial thickness data of Wolsung-1. Last is the finding the thickness-after-bending of Wolsung-1 from thickness decrease rate of each type by bending in Wolsung-2, -3 and -4. The first method is eliminated by thickness-before-bending of Wolsung-1 lower than that of Wolsung 2, 3 and 4. The thinning rates of 2nd and 3rd method are compared with the {sup C}ANDU Feeder FAC Rate Analysis ...
The initial thichnesses of feeder pipes in Wolsung-1 are analyzed to estimate status of feeder thinning. The assumption of the estimation is that feeders of same type are decreased to same thickness by bending and have same thickness after bending. Following three methods are used to estimated thicknesses of the remains besides 52 feeders with initial thickness data in Wolsung-1. First is the estimating initial thickness of same type in Wolsung-1 from initial thickness data of Wolsung-2, -3 and -4. Second is the finding average value of each type from 52 initial thickness data of Wolsung-1. Last is the finding the thickness-after-bending of Wolsung-1 from thickness decrease rate of each type by bending in Wolsung-2, -3 and -4. The first method is eliminated by thickness-before-bending of Wolsung-1 lower than that of Wolsung 2, 3 and 4. The thinning rates of 2nd and 3rd method are compared with the "CANDU Feeder FAC Rate Analysis model' ...
A study has been made of the passive film remaining over pits on stainless steel using a high resolution transmission electron microscope. Type 305 stainless steel was passivated in a borate buffer solution and pitted in ferric chloride. Passive films formed at 0.2 V relative to a saturated calomel electrode were found to be amorphous. Films formed at higher potentials showed only broad diffraction rings. The passive film was found to cover a remnant lacy structure formed over pits passivated at 0.8 V. The metallic strands of the lace were roughly hemitubular in shape with the curved surface facing the center of the pit.
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.
The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.
Comparative patterns of equilibrium adsorption of argon on the surface of graphitized thermal carbon black (GCB) and the inhomogeneous surfaces of nongraphitized carbon black and silica at 77 and 87.3 K were considered. It was shown that argon acquires the properties of a special phase with a layered structure and exhibits two-dimensional phase transitions with the formation of crystal-like layers near the homogeneous surface of GCB even at a temperature exceeding the triple point. However, already at a distance of three-four molecular diameters from the surface, adsorbed argon behaves as a bulk phase in a weak external field. The defect surface of nongraphitized carbon black and the amorphous surface structure of silica destroy the longrange order of adsorbed argon and lower its solidific...
The Kernel Polynomial Method (KPM) has been successfully applied to tight-binding electronic structure calculations as an O(N) method. Here the authors extend this method to nonorthogonal basis sets with a sparse overlap matrix S and a sparse Hamiltonian H. Since the KPM method utilizes matrix vector multiplications it is necessary to apply S{sup {minus}1}H onto a vector. The multiplication of S{sup {minus}1} is performed using a preconditioned conjugate gradient method and does not involve the explicit inversion of S. Hence the method scales the same way as the original KPM method, i.e. O(N), although there is an overhead due to the additional conjugate gradient part. The authors show an application of this method to defects in a titanate/platinum interface and to a large scale electronic structure calculation of amorphous diamond.
To study the effect of CuO on the electrochemical properties of MgNi alloy, the MgNi-xCuO (x = 3, 5 and 10 wt%) composites were prepared by ball-milling method. The X-ray diffraction (XRD) analysis showed that the structures of the composites were amorphous. The cycle stability of the composites was improved compared to pure MgNi alloy due to the enhancement of the anti-corrosion property in the alkaline electrolyte, and the composite with 5 wt% CuO ball-milled for 15 h exhibited the best performance. Electrochemical impedance spectroscopy (EIS) and potential-step measurements indicated that the electrochemical kinetics of the composites was improved.
The factors affecting the rate of silica leaching in alkaline aqueous media from surface silanized, nanoporous, amorphous, silica gels and from silanized silica gels that have been modified with polyamines to form the previously reported silica polyamine composites (SPCs), BP-1 and BP-2 have been investigated. Silanization with alkyl trichlorosilanes slows the rate of silica leaching relative to the unmodified silica gels. The use of bulkier aryl silanes somewhat decreases the silica leaching under the same conditions. Interestingly, after modification of the silanized silica with poly(allylamine) (PAA) to make BP-1, the leaching increases, but subsequent modification of the SPC with chloroacetic acid to make BP-2, quenches this increase. A mechanism explaining these results is discussed. ...
This discussion outlines a few areas of fundamental research which appear vital for progress in developing advanced propulsion concepts using dc railgun thrusters. We have placed emphasis on the following: (1) dense plasma and high current density influences on changes in microstructure and properties of conventional rail conductors such as Cu, Al, and W alloys or composites; (2) the influences described in (1) on more advanced high temperature, microstrain resistant, materials such as amorphous tungsten; (3) location, description and temporal evolution of current, magnetic field, and losses during intense plasma-current field interactions with conductors; and (4) composite materials and sequentially sectioned structures for more efficient EM dc launcher configuration.
This paper attempts to explain the peculiarities of the radial-distribution function of metal glasses without involving ideas of the amorphous structure. On a computer, the radial atomic density for a spherical eutectic single crystal of the composition Fe/sub 84/C/sub 16/ of radius 15 A formed by alternating small crystals of e-Fe and Fe/sub 3/C of cubic form with the edge of the cube ca 10 A. For the sake of clarity, the diagram of such a quasisingle crystal is shown and has been given a cubic boundary. The change in the relationship between the heights of the subpeaks of the second maximum of the radial distribution function of atoms in the Fe-B glasses with a change in the concentration of boron can be explained by the change in the space group of the Fe/sub 3/B metastable boride which is formed in this system.
Soluble starch?based biodegradable and microporous microspheres (SDM-Ms) were prepared by emulsion chemical cross-linking technique using trisodium trimetaphosphate (TSTP) as the cross-linker. The resultant amorphous SDM-Ms were excellently identified by scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The internal rupture and surface-controlled erosion were the predominant degradation mechanisms for SDM-Ms. The obtained SDM-Ms were applied to adsorb coix seed oil (CSO) by immersing method. The adsorption capacity of CSO within SDM-Ms was determined, namely 0.5238?g/g, and the thermal stability was shown higher than that of the free CSO. A burst release appeared in the second hour, followed by controlled release. Diffusion, d...
The relationship between microstructure and macro properties of different cementitious materials has been investigated. This study consists of the following tasks: using NMR and IR to better characterize the amorphous and poorly crystalline phases that occur in blended cements; characterizing the microstructure of the hydration products of modified Portland cement as a function of different percentages of pozzolan replacements by ESEM, SEM, and EDS; comparing the properties of blended cement pastes with a control group of normal Portland cements; and studying the engineering aspects of blended cement that are important for identifying and characterizing fundamental phenomena that are responsible for their durability. The overall influence of the nanoscale and microscale structure of blended and Portland cement on the properties of the resultant composite will be discussed.
Summary: The surface coverage of amorphous silica gels used in the synthesis of silica polyamine composites has been investigated by 29Si NMR. By diluting the polyamine anchor silane, chloropropyl trichlorosilane, with methyl trichlorosilane it was found that surface coverage could be markedly improved for a range of amine polymers after grafting to the silica surface. The commensurate decrease in the number of anchor points and increase in the number of free amines results in an increase in metal capacity and/or an improvement in capture kinetics. Solid state CPMAS-13C NMR has been employed to investigate the structure and metal ion binding of a series of these composite materials. It is reported that the highly branched polymer, poly(ethyleneimine) (PEI) exhibits much broader 13C NMR res...
P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
A number of different theoretical approaches have been used to model to atomic structure and properties of solid-liquid interfaces. Most calculations indicate that ordering occurs in the first several layers of the liquid, adjacent to the crystal surface. In contrast to the numerous theoretical investigations, there have been no direct experimental observations of the atomic structure of a solid-liquid interface for comparison. Saka et al. examined solid-liquid interfaces in In and In-Sb at lattice-fringe resolution in the TEM, but their data do not reveal information about the atomic structure of the liquid phase. The purpose of this study is to determine the atomic structure of a solid-liquid interface using a highly viscous supercooled liquid, i.e., a crystal-amorphous interface.
The use of solvating polymers of polyether type is an interesting solution for the manufacturing of high capacity lithium batteries with lithium metal anodes and which can operate at T > 50 deg. C. These operating conditions are perfectly compatible with electric-powered vehicle and stationary battery applications. In order to improve the ionic conductivity of polymer electrolytes, new aprotic and amorphous polyether lattices have been synthesized having a good conductivity but also good thermal, mechanical and electrochemical stabilities. Two type of 3-D polyether lattices obtained by reticulation of linear pre-polymers have been selected as host polymers: unsaturated poly-condensate and unsaturated co-polyethers. (J.S.) 18 refs.
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by previous authors.
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by previous authors.
Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd{sub 2}Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd{sub 2}Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.
We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.
High molecular weight samples of the novel biodegradable polyester poly(ethylene sebacate) (PESeb) were synthesized. Miscible poly(ethylene sebacate)/poly(4-vinyl phenol) semicrystalline/amorphous blends were prepared by applying the solvent casting method. Miscibility was proved by the single composition dependent glass transition temperature over the entire composition range observed in DSC traces of the quenched blend samples and also by the melting point depression. The Flory-Huggins interaction parameter was found to be x12 = -1.3. Also, FTIR spectra supported the hypothesis of intermolecular interactions due to hydrogen bonding. The crystallization of PESeb in blends was studied. As expected, isothermal crystallization rates decreased in the blends with increasing the PVPh content. T...
Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).
The corrosion resistance of molybdenum, molybdenum disilicide, and a SiC_(_p_)/Al_2O_3 composite to molten E-glass at 1,550 C was studied. Mo showed no tendency to oxidize as it was immersed in soda-lime silicate glass in a parallel study. MoSi_2 was corroded by soluble molecular oxygen, leaving a Mo_5Si_3 interface behind. The SiC_(_p_)/Al_2O_3 composite was corroded at a more rapid rate wherein the SiC component was oxidized to form amorphous silica and CO bubbles. Based on these results, the activity of soluble molecular oxygen in E-glass was determined to be in the range of 2.4 x 10"-"1"4 to 2.0 x 10 "-"8.
Anthracene-bis-resorcinol is an interesting molecule as it forms a hydrogen-bonded network when guest molecules with weak polarity are included. Focused ion beam (FIB) was irradiated on a part of its amorphous film with low dose, and the film was exposed to the vapor of guest molecules. From fluorescence and AFM analyses of this film, it was found that no inclusion compound was formed in FIB irradiated area, i.e. FIB irradiation suppresses the ability to form the inclusion compounds. By utilizing this phenomenon, we succeeded in a microfabrication of relief structures consisting of inclusion compounds which has different fluorescence from its surrounding. Morphology, fluorescence, and IR absorption analyses indicated that hydroxyl or resorcin groups are damaged by ion beams, and consequently a formation of hydrogen-bonded networks, which play a role of a lattice caging guest molecules, becomes impossible.
The mechanical stability of diamond-like carbon (DLC) films coated on nitinol vascular stents was investigated under cyclic loading condition by employing a stent crimping system. DLC films were coated on the vascular stent of a three dimensional structure by using a hybrid ion beam system with rotating jig. The cracking or delamination of the DLC coating occurred dominantly near the hinge connecting the V-shaped segments of the stent where the maximum strain was induced by a cyclic loading of contraction and extension. However the failures were significantly suppressed as the amorphous Si (a-Si) buffer layer thickness increased. Interfacial adhesion strength was estimated from the spalled crack size in the DLC coating for various values of the a-Si buffer layer thickness.
Changes in mass density of amorphous Pd{sub 80}Si{sub 20} were monitored in situ during irradiation with He{sup 2+} and H{sup +} ions at temperatures below 100 K and during subsequent thermal treatment. The mass density decreased with increasing ion fluence and exponentially approached a saturation value of -1.2%, corresponding to a recombination volume of 190 atomic volumes. The initial swelling rate was 2.3 atomic volumes/displaced atom. The mass density of the irradiated material increased during subsequent thermal treatment, and the irradiation-induced decrease of the mass density recovered completely at room temperature.
Nowadays, the studies are focused on the search of better electrocatalysts that promote the complete oxidation of ethanol/bioethanol to CO2. To that end, amorphous bi-catalytic catalysts of composition Ni59Nb40Pt1-xYx (Y=Cu, Ru, x=0.4% at.) have been developed, obtained by mechanical alloying, resulting in higher current densities and an improvement in tolerance to adsorbed CO vs. Ni59Nb40Pt1 catalyst. By using voltammetric techniques, the appearance of three oxidation peaks can be observed. The first peak could be associated with the electrooxidative process of ethanol/bioethanol to acetaldehyde, the second peak could be the oxidation of acetaldehyde to acetic acid, and the last peak might be the final oxidation to CO2. Chrono-amperometric experiments show qualitative poisoning of catalyt...
A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500 degrees C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period.As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions.
Nd{sub 40}Fe{sub 30}Al{sub 10}Co{sub 15}B{sub 5} alloys were fabricated by high energy ball milling method under various conditions. Microstructure of the alloys was investigated by X-ray diffraction and electron microscopy techniques. Magnetic properties were characterized by hysteresis and thermomagnetic measurements. The high coercive fields up to 2.36 T have been observed on the samples consisting of Nd{sub 2}(Fe,Co,Al){sub 14}B, Nd{sub 6}(Fe,Co,Al){sub 14} and Nd crystallites imbedded in a residual amorphous matrix.
Sensitive and quick-response nonlinear inductance characteristics are found for high Tc superconducting (YBa/sub 2/Cu/sub 3/O/sub 7-chi/) disk cores at 77K in which soft magnetic BH hysteresis loops are observed. Various quick response magnetic devices such as modulators, amplifiers and sensors are built using these cores. The magnetizing frequency can be set to more than 20 MHz, which is difficult for conventional ferromagnetic bulk materials such as Permalloy amorphous alloys and ferrite. New quick-response fluxgate type magnetic-field sensors are made using ac and dc voltage sources. The former is used for second-harmonic type sensors, while the latter is for voltage-output multivibrator type sensors. Stable and quick-response sensor characteristics were obtained for two-core type multivibrators.
A novel heteropolyanion-based ionic hybrid was prepared by combining the divalent ionic liquid (IL) cation of 1,1'-(butane-1,4-diyl)-bis(3-methylimidazolium) with the Keggin-structured V-containing heteropolyanion, and characterized by ^1H NMR, FT-IR, ESI-MS, XRD, SEM, TG, BET surface area, melting point, and elemental analysis. Its catalytic activity was evaluated in the hydroxylation of benzene with aqueous H2O2, including the testing of the influence of organic cations, catalytic reusability and optimization of reaction conditions. This hybrid is characterized to be semi-amorphous nanoparticles with a IL-like composition. The hybrid catalyst leads to the liquid-solid biphasic reaction system for hydroxylation of benzene with H2O2, presenting such advantages as high catalytic activity, c...
The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.
Field-annealed Co-based amorphous ribbon (Metglas? 2705M) with a meander structure is fabricated by MEMS technology and the giant magnetoimpedance (GMI) effects are studied at different magnetic fields and frequencies. The maximum longitudinal GMI ratio of the ribbon is 193.7% and the magnetic field sensitivity is 17.4%/Oe. The maximum GMI ratio of the meander ribbon is much larger than the single strip ribbon mainly due to the larger change ratio of inductance L. The sensitivity of an output U reach up to 10 V/A and U thermal fluctuation is less than 15 mV in the temperature range of ?20 to 40?C. This meander shape ribbon can be considered as a good candidate for the GMI-based sensor fabrication.
The distribution of /sup 35/S-sulfate and /sup 3/H-glucosamine in the angular region of the hamster was studied by light and electron microscopic autoradiography following intraperitoneal injection of these compounds to hamsters. Exposed silver grains of /sup 35/S-sulfate were concentrated in the trabecular meshwork, sclera, and cornea, and grains of /sup 3/H-glucosamine were localized in the trabecular region. The radioactivity of both isotopes was observed in the Golgi apparatuses of the endothelial cells of the angular aqueous plexus and the trabecular meshwork. The grains were noted over the entire cytoplasm, except for the nucleus, and then were incorporated into the amorphous substance and collagen fibers in the region adjacent to the angular aqueous sinus. These results suggest that endothelial cells in the angular region synthesize and secrete the sulfated glycosaminoglycans and hyaluronic acid.
TiB{sub 2} appears to be a promising material for the wear protection in various tribological systems, e.g. the diecasting of Al. This study focuses on the development of titanium boride coatings deposited by PACVD, a deposition method which is most suitable for the coating of substrates with complex shapes. All layers analysed are very smooth and exhibit a quasi-amorphous fracture surface. XRD and TEM analysis indicate a nanocrystalline structure with grain sizes in the order of 2 nm. The diffraction patterns can well be correlated to titanium diboride. WDS reveals an over stoichiometric B/Ti ratio. The layer hardness reaches the value of 33 GPa and the critical load in scratch tests rises to 35 N. Neither 100Cr6 nor Al as a counterpart in pin-on-disk tests leads to wear of the coating. (orig.)
The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).
The corrosion behavior of the sputter-deposited amorphous or nanocrystalline W-Nb alloys is studied in 10% NaCl, 0.1 and 1 M NaOH solutions at 24 deg. C, open to air using immersion tests and electrochemical measurements. Niobium metal acts synergistically with tungsten in enhancing the corrosion resistance of the W-Nb alloys so as to show lower corrosion rates than the corrosion rates of the alloy-constituting elements in almost all examined solutions. Corrosion rates of W-Nb alloys are about more than one order of magnitude less than that of the sputter-deposited tungsten and even lower than that of sputter-deposited niobium. The stability of the anodic passive films formed on the W-Nb alloys increase with niobium content.
In this, the last of a series of three papers, we discuss a method of forming iron phosphate ceramics by a reduction process. We report the formation of iron oxide ceramics by reducing hematite with iron in a phosphoric acid solution. The reaction results in a rapid-setting ceramic (at room temperature) with a compressive strength of 3700 psi and a density of 1.7 g/cm{sup 3}. Although the exact mineral form of the binder is difficult to determine because it is mostly amorphous and hence is not amenable to X-ray diffraction analyses, this material is expected to consist of iron hydrophosphates. The reduction process is very useful in recycling several industrial wastes that are rich in hematite, including iron mine tailings, red mud (a caustic waste from the alumina industry), and machining swarfs. Formation of ceramics with red mud and swarfs is also discussed.
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.
ABSTRACT With corn starch as raw material, dextrin was prepared by the combined application of common neutral and thermostable a-amylases in this study. The effects of reaction temperature, reaction time, addition of common neutral and thermostable a-amylases on dextrose equivalent (DE)-value of dextrin were investigated. The obtained dextrin with a DE value of 20.43 was evaluated for morphology, crystallography, particle size distribution and thermal property by scanning electron microscope, X-ray diffractometer, light scattering particle size analyzer and thermogravimetric analyzer. The results showed that the amorphous regions in the core part of corn starch were completely hydrolyzed and only the fractured crystalline surface remained. The particle size of the dextrin change significan...
Highly dispersed silver nanoparticles embedded in mesoporous thin films (MTFs) have been synthesized by modification of the interior surface of mesoporous silica with ethylenediamine moieties, which provided the coordination sites for the Ag ions, and subsequent reduction under hydrogen atmosphere. TEM observations show the mesoporous parent films have effectively controlled the growth of the synthesized silver nanoparticles. The composite films had an ultrafast nonlinear response time, as fast as 200 fs, and a third-order nonlinear optical susceptibility of 0.94??10?10 esu, which was enhanced by the local field enhancement effect that was present when the silver nanoparticles were embedded in the surrounding dielectric matrix. The origin of the ultrafast nonlinear response and the enhanc...
Consider the flow of a thin layer of non-Newtonian fluid over a solid surface. I model the case of a viscosity that depends nonlinearly on the shear-rate; power law fluids are an important example, but the analysis here is for general nonlinear dependence. The modelling allows for large changes in film thickness provided the changes occur over a large enough lateral length scale. Modifying the surface boundary condition for tangential stress forms an accessible base for the analysis where flow with constant shear is a neutral critical mode, in addition to a mode representing conservation of fluid. Perturbatively removing the modification then constructs a model for the coupled dynamics of the fluid depth and the lateral momentum. For example, the results model the dynamics of gravity currents of non-Newtonian fluids even when the flow is not very slow.
This paper is concerned with the fracture analysis of thin cylindrical shells subject to secondary bending stresses with some degree of elastic follow-up. A P.Y.F.M. failure assessment route is utilised for an initial investigation. Results are presented graphically and indicate the differences obtained by considering the stresses as primary or secondary in nature. The Jsup(*) contour integral is computed from the results of a non-linear finite element analysis of a thermally loaded cracked cylinder. Comparison is made between Jsup(*) and the P.Y.F.M. failure criteria demonstrating the degree of conservatism in the latter. It is observed that LEFM may be appropriate for moderate load levels but that the elastic follow-up of the structure causes enhancement of Jsup(*) for higher loads, at which stage LEFM becomes non-conservative. (orig.).
The thin windows for the Muon Ionization Cooling Experiment (MICE) liquid Absorber will be fabricated from 6061-T6-aluminum. The absorber and vacuum vessel thin windows are 300-mm in diameter and are 180 mm thick at the center. The windows are designed for an internal burst pressure of 0.68 MPa (100 psig) when warm. The MICE experiment design calls for changeable windows on the absorber, so a bolted window design was adopted. Welded windows offer some potential advantages over bolted windows when they are on the absorber itself. This report describes the bolted window and its seal. This report also describes an alternate window that is welded directly to the absorber body. The welded window design presented permits the weld to be ground off and re-welded. This report presents a thermal FEA analysis of the window seal-weld, while the window is being welded. Finally, the results of a test of a welded-window are presented.
A novel thin-film composite polyamide nanofiltration membrane was prepared through interfacial polymerization of polymeric polyamine polyvinylamine (PVAm) with isophthaloyl chloride (IPC) on a polysulfone supporting film. The composite membranes were prepared under different conditions and characterized in terms of chemical and morphological structures, surface zeta potential, pure water permeability, and rejection to different solutes including electrolytes and sucrose. The results showed that the membrane performance was significantly affected by the content of amine units of PVAm and the concentrations of PVAm and IPC. The increase of the content of amine units of PVAm and the concentration of IPC resulted in an augment in salt rejection and a decrease in permeability, while the increas...
This work aims to contribute to the understanding of the influence of the ionospheric layer height (ILH) on the thin layer ionospheric model (TLIM) used to retrieve ionospheric information from the GNSS observations. Particular attention is paid to the errors caused on the estimation of the vertical total electron content (vTEC) and the GNSS satellites and receivers inter-frequency biases (IFB), by the use of an inappropriate ILH. The work relies upon numerical simulations performed with an empirical model of the Earth?s ionosphere: the model is used to create realistic but controlled ionospheric scenarios and the errors are evaluated after recovering those scenarios with the TLIM. The error assessment is performed in the Central and the northern part of the South American continents, a re...
Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...
The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).
The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
We report the fabrication and characterization of glucose-tolerant Raney-platinum cathodes for oxygen reduction in potentially implantable glucose fuel. Fabricated by extraction of aluminum from 1mm thin platinum-aluminum bi-layers annealed at 300^oC, the novel cathodes show excellent resistance against hydrolytic and oxidative attack. This renders them superior over previous cathodes fabricated from hydrogel-bound catalyst particles. Annealing times of 60, 120, and 240min result in approximately 400-550nm thin porous films (roughness factors ~100-150), which contain platinum and aluminum in a ratio of ~9:1. Aluminum release during electrode operation can be expected to have no significant effect on physiological normal levels, which promises good biocompatibility. Annealing time has a dis...
A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.
To investigate the variation in the fine structure of polyamide thin-film composite (TFC) membranes prepared via two different interfacial polymerization conditions (IP-I and IP-II), experiments on Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), water contact angle, and positron annihilation spectroscopy (PAS) coupled to a slow positron beam were conducted. Polyamide TFC membranes were prepared via the interfacial polymerization reaction between triethylenetetramine (TETA) and trimesoyl chloride (TMC) on the surface of a modified polyacrylonitrile (mPAN) membrane. Compared with the polyamide TFC membrane prepared via IP-I, the polyamide layer prepared via IP-II showed a shorter S plateau length (thinner thickness), a higher o-Ps intensity I3 value (higher free-volume con...
In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.
The growth of thin Pd[sub 2]Si films on Si(111) surfaces is studied using [ital in] [ital situ] transmission electron microscope under ultrahigh vacuum conditions. No immediate reaction of deposited Pd with Si is observed at room temperature. At [similar to]200 [degree]C, uniform Pd[sub 2]Si films can be formed. The thin Pd[sub 2]Si films are found to grow into strained islands at elevated temperatures. Interfacial misfit dislocations associated with interfacial steps propagate across the strained islands, causing the islands to grow layer-by-layer at the interface. The strain fields associated with the misfit dislocations are believed to be responsible for this behavior.
substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via non-equilibrium molecular dynamics computer ...
Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.
Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.
The PERMCAT is a membrane reactor proposed for processing fusion reactor plasma exhaust gas: tritium removal is obtained by isotopic swamping operating in counter-current mode. In this work, a membrane reactor using a permeator tube of length about 500 mm produced via diffusion welding of Pd-Ag thin foils is described. An appropriate mechanical design of the membrane module has been developed in order to avoid any significant compressive and bending stresses on the very long and thin wall permeator tube: two expanded bellows have been applied to the Pd-Ag tube, so that it has been pre-tensioned before operating. The elongation of the metal permeator under hydrogenation has been theoretically estimated and experimentally verified for properly designing the membrane reactor.
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.
We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm2V?1s?1, normalized transconductances of 0.78 Sm?1, and on/off current ratios of 106. Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabri...
Ultra-thin, uniform, pinhole-free solid polymer electrolyte films having a fixed carboxylic ester group of approximately 1 {mu}m thickness were prepared by polymerization of methyl acrylate and tris(2-methoxyethoxy)vinylsilane in a glow discharge plasma. The carboxylic ester group of the plasma polymer were transformed to lithium carboxylate groups by treatment with lithium iodide. This process give a single lithium ion conductive film. These solid polymer electrolyte films showed ionic conductivities of the order of 10{sup -8} S cm{sup -1} (10{sup 4} {omega} cm{sup 2} resistance per unit area) at room temperature. (orig.).
The interlayer exchange coupling between Co/Pt perpendicular-to-plane magnetized layers across a thin IrMn spacer layer was experimentally studied. In contrast to earlier studies on interlayer coupling through antiferromagnetic NiO, which revealed an oscillatory coupling behavior as a function of NiO thickness, a ferromagnetic coupling was observed here in the range of IrMn thickness between 0.6 and 1.5nm and antiferromagnetic between 1.5 and 2.5nm. The antiferromagnetic coupling is attributed to an orange peel magnetostatic mechanism whereas the ferromagnetic coupling is attributed to an out-of-plane polarization of the antiferromagnetic IrMn layer induced by the interfacial exchange interaction with the adjacent out-of-plane ferromagnetic layers. Measurements of hysteresis loops versus t...
The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
Giant magnetoresistance (GMR) has been used with Eddy current testing to detect small defects not only in thin film structures but also in multilayered metallic structures. This work detected small scratches in the thin film under the surface where these defects were unable to be inspected or monitored by regular testing. In addition, rotational GMR magnetic sensor based Eddy current probes were used for detecting buried corner cracks at the edge of holes in metallic structures. The results of this study proved that giant magnetoresistance is very powerful and effective to sense the magnetic field, which is the result from the perturbation of the Eddy currents caused by a defect. This method can be used for quality control of metallization layers on silicon wafer and to detect cracks in thick structures such as cracks in aging aircraft.
An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.
In many drug dispensing devices, such as syringes and inhalers, an elatomeric gasket is used to prevent the formulation from leaking from the chamber. During device actuation, the seal is subjected to friction, which in turn causes its deformation and can cause unintentional leakage, thus dose variability. Additionally, friction of seal is responsible for a host of potential problems such undue effort required for actuation and potential wear. The mechanism of friction generation in the seal conjunction is complex, arising from adhesion of rubber in contact with the moving interface, viscous action of a thin film of fluid and deformation of seal asperities. Therefore, the first step in understanding the conjunctional behaviour of rubber seals is a fundamental study of mechanisms of frictio...
The phenomenon of radiation blistering by helium ion bombardment has been the subject of extensive studies in recent years because of its technological importance in thermonuclear fusion devices and reactors. However, the mechanism of radiation blistering is still not well understood. There are two different models of blister formation: the gas-pressure model and the lateral stress model. The former model is, however, supported by many experimental observations, the prominent one is that of Evans and Eyre who observed blisters appearing on the front and rear surfaces of a thin wedge-shaped molybdenum foil irradiated by helium ions. Their experiment also indicates that the thickness of the irradiated specimen could be important in affecting the characteristics of blisters. With this in view, we have studied the development of blisters in thin foils of tantalum by 30 MeV ..cap alpha..-particle bombardment.
The phenomenon of radiation blistering by helium ion bombardment has been the subject of extensive studies in recent years because of its technological importance in thermonuclear fusion devices and reactors. However, the mechanism of radiation blistering is still not well understood. There are two different models of blister formation: the gas-pressure model and the lateral stress model. The former model is, however, supported by many experimental observations, the prominent one is that of Evans and Eyre who observed blisters appearing on the front and rear surfaces of a thin wedge-shaped molybdenum foil irradiated by helium ions. Their experiment also indicates that the thickness of the irradiated specimen could be important in affecting the characteristics of blisters. With this in view, we have studied the development of blisters in thin foils of tantalum by 30 MeV #alpha#-particle bombardment. (orig.).
The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 [mu]m. (author).
The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 #mu#m. (author).
This paper is concerned with the study of the Electrorheological RayleighTaylor instability (ERTI) at the interface between a densely packed saturated poorly conducting couple stress porous layer accelerated by a lighter poorly conducting couple stress fluid in a thin shell in the presence of a transverse electric field and laser radiation. A simple theory based on fully developed flow approximations is used to derive the dispersion relation for the growth rate of ERTI. The cutoff and the maximum wave numbers and the corresponding maximum frequencies are obtained. It is shown that the effects of couple stress parameter and the electric field reduce the growth rate considerably compared to a non-conducting fluid in the absence of an electric field. These are favorable to control the surface...
Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.
Focus Ion Beam (FIB) milling has greatly extended the utility of atom probe and TEM because it enables sample preparation with a level of dimensional control never before possible. Using FIB it is possible to extract the samples from desired and very specific locations. The artifacts associated with this sample preparation method must also be fully understood. In this work issues specifically relevant to the FIB milling of aluminum alloys are presented. After using the FIB as a sample preparation technique it is evident that gallium will concentrate in three areas of the sample: on the surface, on grain boundaries and at interphase boundaries. This work also shows that low energy Ar ion nanomilling is potentially quite effective for removing gallium implantation layers and gallium from the internal surfaces of aluminum thin foils.
Land snails move via adhesive locomotion. Through muscular contraction and expansion of their foot, they transmit waves of shear stress through a thin layer of mucus onto a solid substrate. Since a free surface cannot support shear stress, adhesive locomotion is not a viable propulsion mechanism for water snails that travel inverted beneath the free surface. Nevertheless, the motion of the freshwater snail, Sorbeoconcha physidae, is reminiscent of that of its terrestrial counterparts, being generated by the undulation of the snail foot that is separated from the free surface by a thin layer of mucus. Here, a lubrication model is used to describe the mucus flow in the limit of small amplitude interfacial deformations. By assuming the shape of the snail foot to be a traveling sine wave and the mucus to be Newtonian, an evolution equation for the interface shape is obtained and the resulting propulsive force on the snail is calculated. This ...
The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.
In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...
We have developed efficient spectrally selective infrared (IR) emitters that can be utilized for thermophotovoltaic (TPV) power generation by using stainless steel (SUS304) substrates coated with b- FeSi2 thin films. To develop spectrally selective emitters, we theoretically propose antireflection (AR) coatings consisting of a single layer of a dielectric material having a high refractive index (~5) and are appropriate for use with metals such as stainless steels in the IR region. This type of AR coating is fabricated by sputtering a b- FeSi2 thin film on a polished SUS304 substrate. The reflectance in the IR region is successfully reduced to less than 10%. In addition, the AR properties are stable even at 700 K in air. Therefore, metals with AR coatings of b- FeSi2 can be applied to IR em...
In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si-H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.
Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.
The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.
The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.
Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications.