WorldWideScience
1

High-efficiency solar cell and method for fabrication  

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN ...

1999-08-31

2

Particle and X-ray damage in pn-CCDs  

Energy Technology Data Exchange (ETDEWEB)

The fully depleted pn-junction charge coupled device (pn-CCD) has been developed as a detector for X-ray imaging and high-resolution spectroscopy for the X-ray satellite missions XMM and ABRIXAS. If the detector is exposed to a particle radiation environment, the energy resolution is degraded due to charge transfer losses and a dark current increase. In a first experiment, prototype devices were irradiated with 10 MeV protons. After completion of the detector development, the proton irradiation was repeated for a quantitative study of the radiation damage, relevant for the satellite missions. The irradiation test was extended by a 5.5 MeV {alpha}-particle and a 6 keV X-ray exposure of the pn-CCD, including the CAMEX preamplifier chip.

2000-01-11

3

Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants  

International Nuclear Information System (INIS)

We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.

2005-08-01

4

5.6-nm p"+/n junction formation for sub-0.05-#mu#m PMOSFETs by using low-energy B_1_0H_1_4 ion implantation  

International Nuclear Information System (INIS)

Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction implanted at 2 keV ...

2004-06-01

5

Magnetic susceptibility of P"+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised  

International Nuclear Information System (INIS)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P"+N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P"+N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. ...

2003-09-15

6

High bandgap window layer for GaAs solar cells and fabrication process therefor  

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN ...

1979-05-29

7

Ultrashallow P"+/N junction formation by plasma ion implantation  

International Nuclear Information System (INIS)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor ...

2000-12-01

8

The Structural and Optical Properties of GaAs1-xPx /GaAs  

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

2008-08-25

9

Influence of the X-ray radiation on the lifetime of carriers in the p-n junctions of Si and Ge  

International Nuclear Information System (INIS)

Lifetime of minority charae carriers in the Si and Ge p-n unctions has been measured by pulse method of conductivity modulation of base. Its dependence on the X-ray radiation dose has been investigated. Dependence of current transmission coefficients on the dose has been measured and their sharp decrease at low doses and the following saturation at high doses have been observed. Linear dependence of lifetime on X-ray radiation dose has been obtained. Resulting from the comparison of regularities of the change of lifetime due to current characteristics, it has been shown that X-ray radiation leads to the formation of the surface defects, influencing the change of current characteristics as well as to stationary structural defects, causing the decrease of lifetime of the charge carriers with the increase of X-ray radiation dose.

10

Investigation on boron transient enhanced diffusion induced by the advanced P"+/N ultra-shallow junction fabrication processes  

International Nuclear Information System (INIS)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

2005-08-01

11

A new type active personal dosemeter with a solid state detector  

International Nuclear Information System (INIS)

We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.

1988-04-01

13

Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1#mu#m CMOS devices  

International Nuclear Information System (INIS)

Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from ...

2005-08-01

16

Reduction of transient diffusion from 1{endash}5 keV Si{sup +} ion implantation due to surface annihilation of interstitials  

Energy Technology Data Exchange (ETDEWEB)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for ...

1997-11-01

17

Reduction of transient diffusion from 1 endash 5 keV Si"+ ion implantation due to surface annihilation of interstitials  

International Nuclear Information System (INIS)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n ...

18

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the ...

1991-01-01

19

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...

20

Angular sensitivity distribution of detectors for BNCT  

Energy Technology Data Exchange (ETDEWEB)

The research on the therapy of brain tumors and others by the thermal neutron irradiation using research reactors is to kill tumor cells by accumulating boron at a tumor part, and using {alpha} particles and {sup 7}Li generated by {sup 10}B(n, {alpha}){sup 7}Li reaction of thermal neutrons, which is known as boron neutron capture therapy (BNCT). In Japan Atomic Energy Research Institute, the medical irradiation facility was installed in the thermal neutron column of the JRR-2, and as of March, 1994, 22 cases of irradiation have been carried out. In order to monitor the variation of thermal neutron flux during irradiation, the real time measurement using a simultaneous monitor is carried out, but there is the variation of measured values in the Si semiconductor, p-n junction detector possibly due to its direction dependence. The experiment was carried out to quantity the direction dependence of the detector by using the neutron radiography ...

1995-03-01

21

Preparation and properties of poly(propylene carbonate) and nanosized ZnO composite films for packaging applications  

British Library Electronic Table of Contents (United Kingdom)

Abstract A series of polypropylene carbonate (PPC)/ZnO nanocomposite films with different ZnO contents were prepared via a solution blending method. The morphological structures, thermal properties, oxygen permeability, water sorption, and antibacterial properties of the films were investigated as a function of ZnO concentration. While all of the composite films with less than 5 wt % ZnO exhibited good dispersion of ZnO in the PPC matrix, FTIR and SEM results revealed that solution blending did not lead to a strong interaction between PPC and unmodified ZnO. As such, poor dispersion was induced in the composite films with a high ZnO content. By incorporating inorganic ZnO filler nanoparticles, the diffusion coefficient, water uptake in equilibrium, and oxygen permeability decreased as the ...

2011-01-01

23

Controllable growth and magnetic properties of nickel nanoclusters electrodeposited on the ZnO nanorod template  

International Nuclear Information System (INIS)

The ZnO nanorods were used as a template to fabricate nickel nanoclusters by electrodeposition. The ZnO nanorod arrays act as a nano-semiconductor electrode for depositing metallic and magnetic nickel nanoclusters. The growth sites of Ni nanoclusters could be controlled by adjusting the applied potential. Under -1.15 V the Ni nanoclusters could be grown on the tips of ZnO nanorods. On increasing the potential to be more negative the ZnO nanorods were covered by Ni nanoclusters. The magnetic properties of the electrodeposited Ni nanoclusters also evolved with the applied potentials.

2009-12-09

24

A hierarchical lattice structure and formation mechanism of ZnO nano-tetrapods  

International Nuclear Information System (INIS)

The existence of characteristic longitudinal optical and transverse optical phonons of cubic ZnO in ZnO nano-tetrapods is determined by Raman spectroscopy and first-principles calculations. Stacking sequence change at the boundary of the core and legs is also identified by high-resolution transmission electron microscopy. Based on this experimental and theoretical evidence, we demonstrate that the lattice structure of ZnO nano-tetrapods is hierarchical with a zinc blende core connecting to four wurtzite legs. Furthermore, we establish the atomic configuration and propose a formation mechanism induced by Laplace pressure in the initial growth stage of ZnO nano-tetrapods.

2009-08-12

25

ZnO microsheet modified TiO2 nanoparticle composite films for dye-sensitized solar cells  

British Library Electronic Table of Contents (United Kingdom)

Randomly oriented ZnO microsheets were successfully self-assembled on TiO2 nanoparticle (TN) film to act as the scattering layer via a cathodic electrodeposition process. The light scattering properties of ZnO microsheets were studied by UV-Vis spectrometer in the 400?800 nm wavelength range. It was found that ZnO microsheets exhibited excellent ability to scatter the incident light for ZnO microsheet-TiO2 nanoparticle (ZT) composite films. The results showed that dye-sensitized solar cells (DSSCs) fabricated with ZT composite films showed higher short-circuit density (J sc) and conversion efficiency than TN-based DSSCs, due to the light scattering properties of ZnO microsheets.

2010-01-01

26

Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metallic films  

British Library Electronic Table of Contents (United Kingdom)

Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

2008-01-01

27

Application of the shunted junction model to point-contact Josephson junctions  

International Nuclear Information System (INIS)

1974. United States Taur, Y. Univ. of California, Berkeley Richards, PL Auracher,

29

ZnO nanoparticles enhanced antibacterial activity of ciprofloxacin against Staphylococcus aureus and Escherichia coli  

British Library Electronic Table of Contents (United Kingdom)

Nanoparticle metal oxides offer a wide variety of potential applications in medicine due to the unprecedented advances in nanobiotechnology research. In this work, the effect of zinc oxide (ZnO) nanoparticles prepared by mechano-chemical method on the antibacterial activity of different antibiotics was evaluated using disk diffusion method against Staphylococcus aureus and Escherichia coli. The average size of ZnO nanoparticles was between 20 nm and 45 nm. Although ZnO nanoparticles (500 mg/disk) decreased the antibacterial activity of amoxicillin, penicillin G, and nitrofurantoin in S. aureus, the antibacterial activity of ciprofloxacin increased in the presence of ZnO nanoparticles in both test strains. A total of 27% and 22% increase in inhibition zone areas was observed for ciprofloxac...

2010-01-01

30

Synthesis and characterization of undoped and TM (Co, Mn) doped ZnO nanoparticles  

British Library Electronic Table of Contents (United Kingdom)

Antibacterial activity of Transition metals (Mn, Co) doped ZnO nanopowders prepared by a DC thermal plasma method against Escherichia coli and Staphylococcus aureus are investigated. The phase and morphology studies have been carried out by X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) respectively. All the samples of the present investigation are found to have hexagonal wurtzite structure and crystallite sizes are found to vary from 25nm to 30nm. Our bacteriological study showed the enhanced antibacterial activity of transition metals doped ZnO nanoparticles than undoped ZnO indicating the great potential of ZnO nanoparticles in relevant clinical and biomedical applications.

2011-01-01

31

Structural, optical, photocatalytic and antibacterial activity of zinc oxide and manganese doped zinc oxide nanoparticles  

British Library Electronic Table of Contents (United Kingdom)

Polycrystalline ZnO doped with Mn (5 and 10at%) was prepared by the co-precipitation method. The effect of Mn doping on the photocatalytic, antibacterial activities and the influence of doping concentration on structural, optical properties of nanoparticles were studied. Structural and optical properties of the particles elucidated that the Mn2+ ions have substituted the Zn2+ ions without changing the Wurtzite structure of ZnO. The optical spectra showed a blue shift in the absorbance spectrum with increasing dopant concentration. The photocatalytic activities of ZnO powders were evaluated by measuring the degradation of methylene blue (MB) in water under the UV region. It was found that undoped ZnO bleaches MB much faster than manganese doped ZnO upon its exposure to the U...

2010-01-01

32

Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition  

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

2003-10-27

33

Pressure-dependent photoluminescence study of ZnO nanowires  

Energy Technology Data Exchange (ETDEWEB)

The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.

2004-09-13

34

Preparation of ZnO varistors by solution nano-coating technique  

Energy Technology Data Exchange (ETDEWEB)

This paper introduces a new method to produce nano-composite powder for the preparation of high performance ZnO varistors. ZnO particles were coated with Bi{sub 2}O{sub 3}, Sb{sub 2}O{sub 3}, Co{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} and other additives via liquid nano-coating technique. Then the prepared powder was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermal gravity and differential scanning calorimetry (TG-DSC) and particle size distribution. The results showed that the ZnO composite powder is homogeneously coated and ultrafine. The densification, phase composition and microstructure of ZnO varistors was studied by linear shrinkage, X-ray diffraction (XRD) and SEM, respectively. The preliminary electrical parameters of ZnO varistors showed that the breakdown voltage V {sub b} (1 mA/cm{sup 2}) and nonlinear coefficient {alpha} is ...

2006-06-15

35

H2/Ar and vacuum annealing effect of ZnO thin films deposited by RF magnetron sputtering system  

British Library Electronic Table of Contents (United Kingdom)

The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The average optical transmission was >82%...

2010-01-01

36

Growth and characterisation of electrodeposited ZnO thin films  

Energy Technology Data Exchange (ETDEWEB)

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit ...

2008-04-30

37

Temperature Dependences of Leakage Currents of ZnO Varistors Doped with Rare-Earth Oxides  

British Library Electronic Table of Contents (United Kingdom)

Rare-earth oxides are doped into ZnO varistors as grain growth inhibitors for increasing the varistors' voltage gradients. However, their leakage currents become large and their nonlinear coefficients decrease at the same time. The reasonable explanation for such a phenomenon has not yet been available. In this paper, the temperature dependences of varistor samples' leakage currents are investigated, which reveal that the increased leakage currents of ZnO varistors with Y2O3 doping are mainly due to the bypass paths through the intergranular materials at grain corners.

2010-01-01

38

Transient heat transfer in a directly-irradiated solar chemical reactor for the thermal dissociation of ZnO  

International Nuclear Information System (INIS)

A numerical and experimental investigation is carried out in a solar thermochemical reactor for the thermal dissociation of ZnO at 2000 K using concentrated solar energy. The reactor consists of a cavity-receiver lined with ZnO particles and directly exposed to high-flux irradiation. A transient heat transfer model is formulated to link the rate of radiation, convection, and conduction heat transfer to the reaction kinetics. The radiosity and Monte Carlo methods are applied to obtain the distribution of net radiative fluxes at the internal surfaces of the reactor cavity and at the surface of the ZnO bed. Validation is accomplished in terms of the calculated and measured transient temperature profiles and chemical reaction rates.

2008-04-01

39

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO_2 composite/p-AlGaN heterojunction light-emitting diodes  

International Nuclear Information System (INIS)

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer ...

2009-04-22

40

QCCM - Center for NMR Quantum Information Processing  

Science.gov (United States)

... decoherence. Descriptors : *QUANTUM COMPUTING, NUCLEAR MAGNETIC RESONANCE, JOSEPHSON JUNCTIONS. Subject ...

2011-02-16

41

Low-temperature synthesis and room temperature ultraviolet lasing of nanocrystalline ZnO films  

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline ZnO films were fabricated via a simple method involving the oxidation of Zn films at a remarkably low temperature of 380 C. X-ray diffraction study confirmed that the Zn films were completely oxidized even at the low temperature of 380 C and the ZnO films fabricated were of polycrystalline wurtzite structure. Room temperature optical pumping using a frequency-quintupled Q-switched Nd:YAG laser ({lambda}=213 nm) exhibited that sharp peaks at around 3.12 eV emerged above excitation powers of {proportional_to}7 MW/cm{sup 2}, demonstrating lasing in the ZnO films. These results represent that the process is a simple, promising approach for fabricating ZnO of sufficient optical performance for use as ultraviolet (UV) light emitters and an alternative UV laser source; both are key components in short-wavelength photonic devices. (orig.)

2005-02-01

42

The chemistry of technetium(V) complexes containing tetradentate amine oxime ligands  

International Nuclear Information System (INIS)

Technetium-99m was previously shown to form a stable, neutral and lipopholic complex with propylene amine oxime, PnAO. This Tc-99m-PnAO complex was shown to efficiently extracted by normal brain. However, it is not sufficiently retained in the brain to image its cerebral distribution using convertional SPECT (single-photon emission computerized tomography) instrumentation. A number of derivatives of PnAO have been synthesized and their technetium-99m complexes have been biologically evaluated. A number of these have been shown to have high brain uptake without exhibiting the rapid cerebral clearance that was observed with Tc-99m-PnAO. To better understand the chemistry of these potential brain imaging agents, a number of technetium-99 complexes of derivatives of PnAO have been synthesized and characterized. Substituents on the tetradentate amine oxime backbone were varied to probe ...

43

Bar mode instability in relativistic rotating stars a post Newtonian treatment  

CERN Document Server

We construct analytic models of incompressible, rigidly rotating stars in PN gravity and study their stability against nonaxisymmetric Jacobi-like bar modes. PN configurations are modeled by homogeneous triaxial ellipsoids and the metric is obtained as a solution of Einstein's equations in 3+1 ADM form. We use an approximate subset of the equations well-suited to numerical integration for strong field, 3D configurations in quasi--equilibrium. These equations are exact at PN order, and admit an analytic solution for homogeneous ellipsoids. In this paper we present this solution, as well as analytic functionals for the conserved global quantities, M, M_0 and J. By using a variational principle we construct sequences of axisymmetric equilibria of constant density and rest mass, i.e. the PN generalization of Maclaurin spheroids, which are compared to other PN and full relativistic ...

1997-01-01

44

Thermoelectric properties of ZnO nanowires: A first principle research  

British Library Electronic Table of Contents (United Kingdom)

By means of ab-initio electronic structure calculation and one-dimensional Boltzmann transport equation solution, we investigate the size dependent thermoelectric (TE) properties of n-type ZnO nanowires (NWs) and surface passivation effects. As demonstrated by our calculations, largest figure of merit ZT achievable in thin NWs is larger than that in wide NWs, whereas being restrained by higher demand of n-type doping. Moreover, bare NWs are superior in TE application comparing with the passivated. To compete with conventional TE materials, lattice thermal conductivity of ZnO NWs should be at least 2 orders of magnitude lower than bulk value.

2011-01-01

45

Photoconductive ultraviolet detectors based on ZnO films  

British Library Electronic Table of Contents (United Kingdom)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...

2006-01-01

46

Enhanced inactivation of bacteria by metal-oxide nanoparticles combined with visible light irradiation  

British Library Electronic Table of Contents (United Kingdom)

AbstractBackground In recent years nano-metaloxides which easily penetrate into the cells with special interest due to their higher chemical reactivity as compared to that of similar materials in the bulk form. Of particular interest are nano-TiO2 and ZnO, which have been widely used for their bactericidal and anticancerous properties. Purpose The aim of the present study was to examine the bactericidal properties of nano-TiO2 and ZnO combined with visible light on S. aureus and S. epidermitis, known for their high prevalence in infected wounds. Study Using the technique of electron-spin resonance (ESR) coupled with spin trapping, we examined the ability of TiO2 and ZnO nanoparticle suspensions in water to produce reactive oxygen species (ROS) with and without visible light irradiation. Th...

2011-01-01

47

Prenatal diagnosis of junctional epidermolysis bullosa associated with pyloric atresia.  

UK PubMed Central (United Kingdom)

Prenatal diagnosis of junctional epidermolysis bullosa associated with pyloric atresia was carried out in a couple at risk. Their two previous children had died during the first months of life of the...Full Text Available

1990-04-01

48

Acetylcholine receptor kinetics. A description from single-channel currents at snake neuromuscular junctions.  

UK PubMed Central (United Kingdom)

Single-channel currents from acetylcholine receptor channels of garter snake neuromuscular junctions were recorded using the patch-clamp technique. Low concentrations of acetylcholine or carbamylcholine...Full Text Available

1982-09-01

49

Optical Processing and Control  

Science.gov (United States)

... the application of an acousto- optical tunable filter ... Couplers for Large Switch-Array Applications ... Symmetric Integrated Optic X Junction," Electronics ...

1994-01-01

50

Improvement of the parameters of shallow p"+-n-junctions in silicon by additional carbon implantation and step-by-step thermal treatments  

International Nuclear Information System (INIS)

In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)

51

Impact of lateral junction on selective emitter solar cell performance  

Energy Technology Data Exchange (ETDEWEB)

Investigation of selective emitter solar cells has been undertaken using both device fabrication and accurate two-dimensional simulation program. Our results show that selective emitter solar cells exhibit a relatively low fill factor because of minority carriers crowding at the lateral junction. It is also found that carrier recombination in the space-charge region of the lateral junction limits open-circuit voltage improvements

1998-09-14

52

Photoconductive ultraviolet detectors based on ZnO films  

Energy Technology Data Exchange (ETDEWEB)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant {tau} obtained from the curve fitting represents the time accumulation ...

2006-12-15

53

Photoconductive ultraviolet detectors based on ZnO films  

International Nuclear Information System (INIS)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve fitting represents the time accumulation ...

2006-12-15

54

Elastic properties and structural studies on some zinc-borate glasses derived from ultrasonic, FT-IR and X-ray techniques  

International Nuclear Information System (INIS)

Glasses in the system (1 - x) [29Na2O- 4Al2O3- 67B2O3]- xZnO (0 ? x ? 35 mol%), have been prepared by the melt quenching technique. Elastic properties, X-ray and FT-IR spectroscopic studies have been employed to study the role of ZnO on the structure of the investigated glass system. Elastic properties and Debye temperature have been investigated using sound wave velocity measurements at 4 MHz at room temperature. The results showed that the density increases and the molar volume decreases while both sound velocities and the determined glass transition temperatures decrease with increase in x. X-ray and infrared spectra of the glasses reveal that the borate network consists of diborate units and is affected by the increase in the concentration of ZnO content. These results are interpreted in terms of the decrease in the N4 values (fraction of tetrahedral coordinated boron atoms), and substitution of longer bond lengths of ...

2009-05-05

55

Zinc determination in medicinal powders by radionuclide X-ray fluorescence analysis  

International Nuclear Information System (INIS)

X-ray fluorescence analysis was used to determine the zinc content of the ''Perilacin'' powder and the ZnO content of the ''Epiderman-pix'' powder. The characteristic Ksub(#alpha#) line of zinc was excited using a "1"4"7Pm/Mo source (10"7 s"-"1) and the molybdenum Ksub(#alpha#) line (17.47 keV). 4 to 5% Zn and 45 to 49% ZnO were determined with a NaI(Tl) scintillation detector. The radiation intensity was found to decrease with particle size. (M.K.).

1977-01-01

56

The difference between standard and average efficiencies of multijunction compared with single-junction concentrator cells  

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

1991-05-01

57

Noise in Josephson mm-wave mixers  

International Nuclear Information System (INIS)

Point contact Josephson junctions can function as millimeter wave heterodyne mixers with conversion gain. The best results achieved thus far show a single sideband conversion gain of 1.3 and a mixer contribution to the system noise temperature of 54"0K. Both of these results are approximately 5 times better than the best published figures for cooled Schottky barrier diode mixers operated at the same frequency. The measured noise for a variety of junctions can be expressed as a universal function of the normalized rf frequency #OMEGA# = h#omega#/2eI/sub c/R. It is about a factor 2 larger than the calculated noise arising from the thermal noise in the junction shunt resistance, R. The noise calculation was done for the resistively shunted junction model using an analog junction simulator.

1974-09-30

58

Fabrication of shuttle-junctions for nanomechanical transfer of electrons  

International Nuclear Information System (INIS)

We report on the fabrication of nanomechanical devices for shuttling of electrons from one electrode to another. Each device consists of a 20 nm diameter gold nanoparticle embedded within the gap between two gold electrodes. In two different kinds of shuttle-junctions the nanoparticle is attached to the electrodes through either (i) a single layer of 1,8-octanedithiol or (ii) a multilayer of 1-octanethiol molecules. The thiol layers play the role of 'damped springs', such that when a sufficient voltage bias is applied to the junction, the nanoparticle is expected to start oscillating and thereby transferring electrons from one electrode to the other. For both kinds of shuttle-junctions we observed an abrupt increase in the transmitted current above a threshold voltage, which can be attributed to a transition from the stationary to the oscillating regime. The threshold voltage was found to be lower for single-layer ...

2009-12-02

59

Near-threshold production of {omega}-mesons in the pn{yields}d{omega} reaction  

Energy Technology Data Exchange (ETDEWEB)

The first measurement of the pn{yields}d{omega} total cross-section has been achieved at mean excess energies Q{approx}28 and 57 MeV by using a deuterium cluster-jet target. The momentum of the fast deuteron was measured in the ANKE spectrometer at COSY-Juelich and that of the slow ''spectator'' proton (p{sub sp}) from the pd{yields}p{sub sp}d{omega} reaction in a silicon telescope placed close to the target. The cross-sections lie above those measured for pp{yields}pp{omega} but seem to be below theoretical predictions. (orig.)

2004-09-01

60

Single Cooper-pair tunneling junctions using high-{Tc} superconducting materials  

Energy Technology Data Exchange (ETDEWEB)

The authors introduce the single electron (Cooper-pair) tunneling junctions using c-axis Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+d} (Bi-2212) superconducting single crystal whiskers. Focused-ion-beam (FIB) etching patterned the Bi-2212 whiskers. The fabricated small stacked junctions have in-plane area S smaller than <1 {micro}m{sup 2}. The junctions showed the current-voltage (I-V) characteristics with the periodic structure of current peaks. The stacking layered structure of Bi-2212 works as multi-junctions array which decrease the effective capacitance, C{sub {Sigma}} = C{sub 0}/N, where C{sub 0} is the capacitance of junction and N is the layer number of elementary junctions. The period of current peaks of I-V curves corresponds to the charging energy of the single Cooper pair, 2Ec (=e{sup 2}/C{sub {Sigma}}).

1999-09-01

61

Ultrashallow P{sup +}/N junction formation by plasma ion implantation  

Energy Technology Data Exchange (ETDEWEB)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of ...

2000-12-01

62

Quantum theory of the interaction of Josephson junctions with non-classical microwaves  

Energy Technology Data Exchange (ETDEWEB)

We present a study of the interaction between Josephson junctions in circular superconducting rings and non-classical microwaves, treating both quantum mechanically. A Hamiltonian that describes both inductive and capacitive coupling between the two systems is derived within the external field approximation. Other Hamiltonians which go beyond the external field approximation, and describe explicitly the interaction of the quantum circuit that produces the non-classical microwaves with the Josephson junction circuit, are also presented. A comparison between current experiments which use classical electromagnetic fields and the proposed experiments that use non-classical microwaves, is made. (orig.) With 6 figs., 32 refs.

1997-01-01

63

Sequence features involved in the mechanism of 3' splice junction wobbling  

UK PubMed Central (United Kingdom)

BackgroundAlternative splicing is an important mechanism mediating the diversified functions of genes in multicellular organisms, and such event occurs in around 40-60% of human...Full Text Available

64

Review and investigations of oscillatory flow behaviour of a horizontal ceiling opening for nuclear containment and fire safety analysis  

Energy Technology Data Exchange (ETDEWEB)

In the thermal hydraulics codes developed for fire safety analysis and for containment thermal hydraulic analysis, junctions in the multi-compartment geometries is often modeled as uni-directional junctions. However, ceiling junctions are known to depict unstable/oscillatory bi-directional flow behavior. Detailed investigations have been carried out to understand the unstable flow behaviour of a junction by analyzing an earlier reported experiment and its subsequent two dimensional numerical RANS based study of fire in an enclosure. The authors attempt more realistic and desired three dimensional and inherently transient large eddy simulations using a computer code Fire Dynamics Simulator (FDS). The paper presents the details of the analysis, the results obtained and further studies required to be conducted so that the findings can be applied to the fire/containment thermal hydraulics analysis codes ...

2011-05-15

65

Point-contact Andreev reflection spectroscopy of heavy-fermion-metal/superconductor junctions  

Energy Technology Data Exchange (ETDEWEB)

Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn{sub 5} using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance. To explore their physical origins, we have extended our measurements to point-contact junctions between single crystalline heavy-fermion metals and superconducting Nb tips. Differential conductance spectra are taken on junctions with three heavy-fermion metals, CeCoIn{sub 5}, CeRhIn{sub 5}, and YbAl{sub 3}, each with different electron mass. In contrast with Au/CeCoIn{sub 5} junctions, Andreev signal is not reduced and no dependence on effective mass is observed. A possible explanation based on a two-fluid picture for heavy fermions is proposed.

2008-04-01

66

Point -contact Andreev reflection spectroscopy of heavy-fermion-metal/superconductor junctions  

Energy Technology Data Exchange (ETDEWEB)

Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn{sub 5} using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance. To explore their physical origins, we have extended our measurements to point-contact junctions between single crystalline heavy-fermion metals and superconducting Nb tips. Differential conductance spectra are taken on junctions with three heavy-fermion metals, CeCoIn{sub 5}, CeRhIn{sub 5}, and YbAl{sub 3}, each with different electron mass. In contrast with Au/CeCoIn{sub 5} junctions, Andreev signal is not reduced and no dependence on effective mass is observed. A possible explanation based on a two-fluid picture for heavy fermions is proposed.

2008-01-01

67

Flight Research: Problems Encountered and What They Should ... - NASA  

Science.gov (United States)

flow separation occurred at the junction of the tip fin and the fuselage. ...... Systems, presented at the AGARD Guidance and Control and Flight Mechanics ...

68

Development of a Transpondersonde for the Super-LOKI ...  

Science.gov (United States)

... The three meteorological rocket systems, in order of ... IC3 and IC4 divides the incoming clock pulses f ... at the junction of the temperature sensor and R ...

1972-02-02

69

Characterization of All-Chromium Tunnel Junctions and Single Electron Tunneling Devices Fabricated by Direct-Writing Multilayer Technique  

CERN Document Server

We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed in air under ambient conditions. From the experiments on single junctions, values for the effective barrier height and thickness were derived. For the Cr/CrO_x/Cr SET transistors we achieved minimal junction areas of 17 x 60 nm^2 using a scanning transmission electron microscope for the e-beam exposure on Si_3N_4 membrane substrate. We discuss the electrical performance of the transistor samples as well as their noise behavior.

1999-01-01

70

Solar syngas production from CO"2 and H"2O in a two-step thermochemical cycle via Zn/ZnO redox reactions: Thermodynamic cycle analysis  

British Library Electronic Table of Contents (United Kingdom)

Solar syngas production from CO"2 and H"2O is considered in a two-step thermochemical cycle via Zn/ZnO redox reactions, encompassing: 1) the ZnO thermolysis to Zn and O"2 using concentrated solar radiation as the source of process heat, and 2) Zn reacting with mixtures of H"2O and CO"2 yielding high-quality syngas (mainly H"2 and CO) and ZnO; the ZnO is recycled to the first, solar step, resulting in net reaction @bCO"2 + (1 - @b)H"2O -> @bCO + (1 - @b)H"2. Syngas is further processed to liquid hydrocarbon fuels via Fischer-Tropsch or other catalytic processes. Second-law thermodynamic analysis is applied to determine the cycle efficiencies attainable with and without heat recuperation for varying molar fractions of CO"2:H"2O and solar reactor temperatures in the range 1900-2300 K. Conside...

2011-01-01

71

Photochemical synthesis of ZnO/Ag nanocomposites  

Energy Technology Data Exchange (ETDEWEB)

Composite ZnO/Ag nanoparticles have been formed via the photocatalytic reduction of silver nitrate over the ZnO nanocrystals, their optical, electrophysical and photochemical properties have been investigated. Mie theory has been applied to analyze the structure of the absorption spectra of ZnO/Ag nanocomposite. The irradiation effects upon the optical properties of ZnO/Ag nanostructure have been investigated. It has been found that the irradiation of ZnO/Ag nanoparticles results in electrons accumulation by both the semiconductor and the metallic components of the nanocomposite. It has been found that silver nitrate can be photochemically deposited onto the surface of ZnO nanoparticles under the illumination with the visible light in the presence of the sensitizer - methylene blue. Kinetics of the sensitized Ag(I) photoredution has been studied. It has been concluded that the key stage of this process is the electron injection from ...

2007-06-15

72

Morphology and luminescence properties of ZnO layers produced by magnetron spattering  

International Nuclear Information System (INIS)

We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in the gas flow during the growth process. Smooth and flat layers were produced with a high Ar/O ratio, while porous layers with various morphologies were obtained with a low Ar/O ratio. The layers produced with O/Ar ration equal to 10 exhibit extremely high near-bandgap luminescence intensity even higher in comparison with bulk ZnO single crystals. The free carrier density estimated from the analysis of photoluminescence spectra is also very high in these samples suggesting that these technological conditions promote both optical and electrical activation of the doping Al impurity. The samples grown with high Ar/O ratios exhibit strong visible emission which is controlled by the technological conditions.

2011-07-07

73

Influence of sea water on the fatigue strength and notch sensitivity of a plasma nitrided B-Mn steel  

Energy Technology Data Exchange (ETDEWEB)

Notched and smooth cylindrical plasma nitrided (PN) and quench and tempered (Q and T) steel specimens made of a B-Mn SS2131 ({approx}AISI 15B21H) steel have been exposed to constant amplitude plane reversed bending corrosion fatigue tests (R = -1) at 47 Hz in sea water. S - N curves show that sea water suppresses the fatigue limit and reduces fatigue strength (especially at long lives) of smooth and notched Q and T and PN specimens. Plasma nitriding improves the corrosion fatigue resistance of Q and T specimens; this is associated with the good corrosion resistance of {epsilon} and {gamma}`-phases, the enhancement of corrosion and fatigue by compressive residual stresses, and the consumption of H{sup +} ions during reduction of nitrogen. This improvement is more significant for smooth specimens and for long lives. Notch sensitivity of Q and T and PN specimens decreases with fatigue life. Pitting corrosion, cyclic applied ...

1998-06-01

74

TEM analyses of heterogeneous nucleation of internally oxidised multi-component Ag-Zn-based alloys  

Energy Technology Data Exchange (ETDEWEB)

The aim of our research was to identify structures and chemical compositions of phases formed during internal oxidation of multi-component Ag-Zn-Mg-based alloys. Since the ability of inoculation mostly depends on large free energy of formation of oxides of microalloying elements and their crystallographic similarity, Mg in quantities of 0.001-0.5 mass% was selected as a micro-alloying element. These correspond to the quantities of 0.005-2.5 vol.% of MgO in the selected Ag-Zn-based alloys. Ag-based metal matrix, heterogeneous nuclei of MgO and oxide (ZnO) of the main alloying element were analysed by transmission electron microscopy (TEM). Structural inter-connections among them were also investigated and analysed. In situ phenomenon of heterogeneous nucleation of MgO and ZnO was proved. (orig.)

2001-11-01

75

A ZnO nanowire array film with stable highly water-repellent properties  

Energy Technology Data Exchange (ETDEWEB)

Highly water-repellent surfaces have been prepared from arrayed nanowires of zinc oxide (ZnO) by a treatment with stearic acid. The layers are electrochemically deposited on a nanocrystalline seed layer from an oxygenated aqueous zinc chloride solution. An advancing contact angle (CA) as high as 176{sup 0} is obtained with a very small hysteresis {approx}1{sup 0}. These results, supplemented by infrared spectroscopy, show that the stearic acid forms a very well-packed self-assembled monolayer. The CA measurements show a very good stability of the treated surface even when exposed to harsh conditions or long-term ambient illumination.

2007-09-12

76

Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys  

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

2001-05-16

77

Removal of polycyclic aromatic hydrocarbons from aqueous solution using plant residue materials as a biosorbent  

British Library Electronic Table of Contents (United Kingdom)

To elucidate biosorption mechanism and removal efficiency of plant residues as a biosorbent to abate polycyclic aromatic hydrocarbons (PAHs) in wastewater, sorption of PAHs onto wood chips (WC), ryegrass roots (RR), orange peels (OP), bamboo leaves (BL), and pine needles (PN) were investigated. The structural characterization of the biosorbents was analyzed by elemental composition, BET-N2 surface area, and Fourier transform infrared spectroscopy. PAHs sorption to the selected biosorbents were compared and correlated with their structures. Biosorption isotherms fit well with Freundlich equation and the mechanism was dominated by partition process. The magnitude of phenanthrene partition coefficients (Kd) followed the order of PN>BL>OP>RR>WC, ranged from 2484+/-24.24 to 5306+/-92.49L/kg. Ex...

2011-01-01

78

Photosynthesis responses to various soil moisture in leaves of Wisteria sinensis  

British Library Electronic Table of Contents (United Kingdom)

A study was conducted to determine the fitting soil moisture for the normal growth of two-year-old W. sinensis (Sims) Sweets by using gas exchange technique. Remarkable threshold values of net photosynthetic rate (Pn), transpiration rate (Tr) and water use efficiency (WUE) were observed in the W. sinensis leaves treated by various soil moisture and photosynthetic available radiation (PAR). The fitting soil moisture for maintaining a high level of Pn and WUE was in range of 15.3%?26.5% of volumetric water content (VWC), of which the optimal VWC was 23.3%. Under the condition of fitting soil moisture, the light saturation point of leaves occurred at above 800?mol?m?2?s?1, whereas under the condition of water deficiency (VWC, 11.9% and 8.2%) or oversaturation (VWC, 26.5%), the light saturatio...

2007-01-01

79

Extragalactic Planetary Nebulae: Observational Challenges & Future Prospects  

CERN Document Server

The study of extragalactic planetary nebulae (EPN) is a rapidly expanding field. The advent of powerful new instrumentation such as the PN spectrograph has led to an avalanche of new EPN discoveries both within and between galaxies. We now have thousands of EPN detections in a heterogeneous selection of nearby galaxies and their local environments, dwarfing the combined galactic detection efforts of the last century. Key scientific motivations driving this rapid growth in EPN research and discovery have been the use of the PNLF as a standard candle, as dynamical tracers of their host galaxies and dark matter and as probes of Galactic evolution. This is coupled with the basic utility of PN as laboratories of nebula physics and the consequent comparison with theory where population differences, abundance variations and star formation history within and between stellar systems informs both stellar and galactic evolution. Here we pose some of the ...

2004-01-01

80

Chiral perturbation theory calculation for pn {yields}d{pi} {pi} at Threshold  

Energy Technology Data Exchange (ETDEWEB)

We investigate the reaction pn {yields}d{pi} {pi} in the framework of Chiral Perturbation Theory (ChPT). For the first time a complete calculation of the leading-order contributions is presented. We identify various diagrams that are of equal importance as compared to those recognized in earlier works. The diagrams at leading order behave as expected by the power counting. Also for the first time the nucleon-nucleon interaction in the initial, intermediate and final state is included consistently and found to be very important. Although the perturbative series for the production operator is expected to converge very slowly, this study provides the theoretical basis for a future evaluation of the non-resonant contributions in two-pion production reactions in nucleon-nucleon collisions. (orig.)

2011-01-15

81

Normal-state conductance used to probe superconducting tunnel junctions for quantum computing  

International Nuclear Information System (INIS)

Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, ...

2010-04-01

82

Low-noise Josephson mixers at 115 GHz using recyclable point contacts  

International Nuclear Information System (INIS)

Thermally recyclable Nb point-contact Josephson junctions are investigated as low-noise mixers with an external local oscillator at 115 GHz. The best single sideband mixer noise temperature achieved is 140 ( +- 20) K with a (SSB) conversion loss of 2.4 ( +- 0.5) dB. Such rugged junctions are suitable for use in practical receivers and should give unprecedented sensitivity at the shorter millimeter wavelengths.

83

Josephson junctions as heterodyne detectors  

International Nuclear Information System (INIS)

Heterodyne detection with a point-contact Josephson junction has been investigated both experimentally and theoretically. The measured performance of the device at 36 GHz is in good agreement with the theory. By operating vanadium point contacts at 1.4 K, the authors have achieved a single-sideband (SSB) mixer noise temperature of 54 K with a conversion gain of 1.35 and a signal bandwidth on the order of 1 GHz. A potentially impressive performance for these devices at submillimeter wavelengths can be extrapolated from the results.

84

Boron uphill diffusion during ultrashallow junction formation  

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

2003-05-26

85

Gap-junctional communication of bone marrow stromal cells is resistant to irradiation in vitro  

Energy Technology Data Exchange (ETDEWEB)

Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...

1990-10-01

86

Gap-junctional communication of bone marrow stromal cells is resistant to irradiation in vitro  

International Nuclear Information System (INIS)

Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...

87

Effect of oxide treatment at the microcrystalline tunnel junction of a-Si:H/a-Si:H tandem cells  

Energy Technology Data Exchange (ETDEWEB)

The electrical transport taking place in the {mu}c-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO{sub 2} plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic {mu}c-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n){mu}c-Si/oxide/(p){mu}c-Si and (b) (n){mu}c-Si/(i){mu}c-Si/(p){mu}c-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) {mu}c-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel ...

2000-05-01

88

Comparison of Si and InSb as the normal layer of S-N-S junctions  

Energy Technology Data Exchange (ETDEWEB)

This paper reports on superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with the normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB), and electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junction with InSb shows the characteristics of Josephson S-N-S junction. A 200nm-thick film of InSb deposited on MgO had a mobility of 83 cm{sup 2}.V {center dot} s and a carrier density of 6.5 {times} 10{sup 17} cm{sup {minus}3} at 4.2K. The coherence length {xi}{sub n} was computed to be 17 nm from these experimental data, and we obtained critical superconducting current Ic of 100 {mu} A for the S-N-S junction which had a line width of 10{mu} m and a channel length of 20 nm.

1991-03-01

89

Virostatic potential of micro-nano filopodia-like ZnO structures against herpes simplex virus-1.  

Science.gov (United States)

Herpes simplex virus type-1 (HSV-1) entry into target cell is initiated by the ionic interactions between positively charged viral envelop glycoproteins and a negatively charged cell surface heparan sulfate (HS). This first step involves the induction of HS-rich filopodia-like structures on the cell surface that facilitate viral transport during cell entry. Targeting this initial first step in HSV-1 pathogenesis, we generated different zinc oxide (ZnO) micro-nano structures (MNSs) that were capped with multiple nanoscopic spikes mimicking cell induced filopodia. These MNSs were predicted to target the virus to compete for its binding to cellular HS through their partially negatively charged oxygen vacancies on their nanoscopic spikes, to affect viral entry and subsequent spread. Our results demonstrate that the partially negatively charged ZnO-MNSs efficiently trap the virions via a novel virostatic mechanism rendering them unable to enter into human corneal ...

2011-08-26

90

Preparation of ZnO-Al2O3 Particles in a Premixed Flame  

DEFF Research Database (Denmark)

Zinc oxide (ZnO) and alumina (Al2O3) particles are synthesized by the combustion of their volatilized acetylacetonate precursors in a premixed air-methane flame reactor. The particles are characterized by XRD, transmission electron microscopy, scanning mobility particle sizing and by measurement of the BET specific surface area. Pure (?-)alumina particles appear as dendritic aggregates with average mobile diameter 43-93 nm consisting of partly sintered, crystalline primary particles with diameter 7.1-8.8 nm and specific surface area 184-229 m2/g. Pure zinc oxide yields compact, crystalline particles with diameter 25-40 nm and specific surface area 27-43 m2/g. The crystallite size for both oxides, estimated from the XRD line broadening, is comparable to or slightly smaller than the primary particle diameter. The specific surface area increases and the primary particle size decreases with a decreasing flame temperature and a decreasing precursor vapour pressure. The ...

2000-01-01

91

Evaluation of adhesive plasters by radionuclide X-ray fluorescence analysis  

International Nuclear Information System (INIS)

A radiometric method was elaborated for surface density determinations of the adhesive layer of plasters by radionuclide X-ray fluorescence using the 17.47 keV bremsstrahlung of "1"4"7Pm/Mo. The bremsstrahlung line excites the 8.63 keV characteristic K#alpha# line of Zn contained in the adhesive layer of the plaster as a filling material in the form of ZnO. In homogeneous adhesive layers the Zn content is proportional to surface density. (author).

1976-01-01

92

Elastic properties and structural studies on some zinc-borate glasses derived from ultrasonic, FT-IR and X-ray techniques  

Energy Technology Data Exchange (ETDEWEB)

Glasses in the system (1 - x) [29Na{sub 2}O- 4Al{sub 2}O{sub 3}- 67B{sub 2}O{sub 3}]- xZnO (0 {<=} x {<=} 35 mol%), have been prepared by the melt quenching technique. Elastic properties, X-ray and FT-IR spectroscopic studies have been employed to study the role of ZnO on the structure of the investigated glass system. Elastic properties and Debye temperature have been investigated using sound wave velocity measurements at 4 MHz at room temperature. The results showed that the density increases and the molar volume decreases while both sound velocities and the determined glass transition temperatures decrease with increase in x. X-ray and infrared spectra of the glasses reveal that the borate network consists of diborate units and is affected by the increase in the concentration of ZnO content. These results are interpreted in terms of the decrease in the N{sub 4} values (fraction of tetrahedral coordinated boron atoms), and ...

2009-05-05

93

Spherical harmonic operator method of solving the transport equation in curvilinear coordinates. Application to #gamma#-theta geometry  

International Nuclear Information System (INIS)

An explicite PN solution of the multi-dimensional homogeneous neutron transport equation is given by expanding the angular flux into a series of geometry-independent spherical harmonics operators. An algorithm is developed for representing the spherical harmonic operators in orthogonal curvilinear coordinates. The general formulae are applied to two-dimensional spherical geometry; detailed P3 formulae are given. (orig.).

94

Breakdown electroluminescence spectra in structures based on the solid solutions Ga/sub 1-x/Al/sub x/P(As)  

Energy Technology Data Exchange (ETDEWEB)

The authors investigate the breakdown luminescence spectra in reverse-biased p-n heterojunctions based on gallium and aluminum phosphides and arsenides for the purpose of determining their behavior as lasing and photodetection materials. Data are given on temperature coefficients, band gap structure, bremsstrahlung, hot carrier mobility and photon emission, and transition and recombination parameters.

1987-08-01

95

Two-boson algebra and quantum computing with Josephson-like systems  

Energy Technology Data Exchange (ETDEWEB)

Our investigation concerns the class of Josephson-like systems, sharing the same nonlinear Hamiltonian. Among the latter a Josephson junction with an external biasing circuit is considered. We diagonalize the fully nonlinear Hamiltonian (in the superconductive regime of the junction) in the Fock space of the TBHA (two-boson Heisenberg algebra) and prove that such algebra leads quite naturally to the theoretical realization of codewords and logical operators: the codewords are defined as the even and odd coherent states of the TBHA, while the logical operators are expressed in terms of operators in the same algebra. Our theoretical construction corresponds to a continuous variable quantum computation scheme; the continuous variables are identified in terms of the physical operators of the junction. The link between this scheme and the technique of fermionization of bosonic systems is also discussed.

2005-12-01

96

Junction conditions in General Relativity with spin sources  

CERN Document Server

The junction conditions for General Relativity in the presence of domain walls with intrinsic spin are derived in three and higher dimensions. A stress tensor and a spin current can be defined just by requiring the existence of a well defined volume element instead of an induced metric, so as to allow for generic torsion sources. In general, when the torsion is localized on the domain wall, it is necessary to relax the continuity of the tangential components of the vielbein. In fact it is found that the spin current is proportional to the jump in the vielbein and the stress-energy tensor is proportional to the jump in the spin connection. The consistency of the junction conditions implies a constraint between the direction of flow of energy and the orientation of the spin. As an application, we derive the circularly symmetric solutions for both the rotating string with tension and the spinning dust string in three dimensions. The rotating ...

2006-01-01

97

Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si{sub 1-x}Ge{sub x} source/drain junctions  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this paper is to evaluate the role of the strain-relaxation processes on the leakage current of embedded SiGe S/D junctions. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured to further investigate the relaxation degree of embedded SiGe S/D junctions in the regime where partial relaxation by misfits dislocations is assumed, yielding a reduction of the leakage current density. Further, the impact of the ion implantation-related defects on the electrical performance is discussed. The analysis is complemented with structural characterization based on High Resolution Transmission Electron Microscopy (HRTEM) and Nomarski microscopy. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2009-08-15

98

Wafer and Solar Cell Characterization by GT-PVSCAN6000  

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

2002-08-01

99

Transforming growth factor-b induces epithelial to mesenchymal transition by down-regulation of claudin-1 expression and the fence function in adult rat hepatocytes  

British Library Electronic Table of Contents (United Kingdom)

Abstract Background/Aims: Transforming growth factor-b (TGF-b) initiates and maintains epithelial-mesenchymal transition (EMT), which causes disassembly of tight junctions and loss of epithelial cell polarity. In mature hepatocytes during EMT induced by TGF-b, changes in the expression of tight junction proteins and the fence function indicated that epithelial cell polarity remains unclear. Methods: In the present study, using primary cultures of adult rat hepatocytes at day 10 after plating, in which epithelial cell polarity is well maintained by tight junctions, we examined the effects of 0.01-20 ng/ml TGF-b on the expression of the integral tight junction proteins, claudin-1, -2 and occludin, as well as the fence function. Results: In adult rat hepatocytes, TGF-b induced EMT, which was ...

2008-01-01

100

The role of Holliday junction resolvases in the repair of spontaneous and induced DNA damage  

UK PubMed Central (United Kingdom)

DNA double-strand breaks (DSBs) and other lesions occur frequently during cell growth and in meiosis. These are often repaired by homologous recombination (HR). HR may result in the formation of DNA...Full Text Available

2011-09-01

101

The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main ...

2005-02-15

102

The bacterial signal indole increases epithelial-cell tight-junction resistance and attenuates indicators of inflammation  

UK PubMed Central (United Kingdom)

Interkingdom signaling is established in the gastrointestinal tract in that human hormones trigger responses in bacteria; here, we show that the corollary is true, that a specific bacterial signal,...Full Text Available

2010-01-05

103

The Reduction of TED in Ion Implanted Silicon  

International Nuclear Information System (INIS)

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have ...

2008-11-03

104

Study of the effects of interactions quantum interference and disorder in GaAs and of GaAs jointed to a superconductor; Etude des effets d`interference quantique et de desordre dans GaAs avec interactions et GaAs connecte a un supraconducteur  

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in ...

1997-11-07

105

Spontaneous quantal transmitter release: a statistical analysis and some implications  

UK PubMed Central (United Kingdom)

1. Miniature end-plate potentials (m.e.p.p.s) were intra- and extracellularly recorded from neuromuscular junctions in rat phrenic nerve—diaphragm preparations in vitro....Full Text Available

1973-07-01

106

Selecting parameters of powered supports for junctions of working faces and gate roads based on hydraulics  

Energy Technology Data Exchange (ETDEWEB)

Evaluates experiments aimed at selecting optimum design and technical specifications of a support system for junctions of gate roads and longwall faces mined by shearer loaders and powered supports. A set of supports used at a junction of a working face and a gate road consisted of 2 supports (each made up of a roof bar and two hydraulic props). Roof bar length ranged from 4.0 to 5.5 m and from 7.0 to 9.0 m respectively. The support roof bars were parallel to the longitudinal axis of a gate road. Stress distribution in strata surrounding a junction of a working face and a gate road was analyzed. The finite element method was used. Convergence of the roof and the floor of a gate road depending on support yield strength and distance from a measuring point to the supports was analyzed. Recommendations are made for optimum yield strength of the supports. Nomograms for selecting optimum support yield strength are given. ...

1993-01-01

107

Oxygen deprivation inhibits basal keratinocyte proliferation in a model of human skin and induces regio-specific changes in the distribution of epidermal adherens junction proteins, aquaporin-3, and glycogen  

UK PubMed Central (United Kingdom)

It is generally accepted that hypoxia and recovery from oxygen deprivation contribute to the breakdown and ulceration of human skin. The effects of these stresses on proliferation, differentiation...Full Text Available

2009-01-01

108

Optimization of advanced PMOS junctions using Ge, B and F co-implants  

International Nuclear Information System (INIS)

The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized ...

2005-08-01

109

Nonlinear response of superconductors to alternating fields and currents  

Science.gov (United States)

This report discusses the following topics on superconductivity: nonlinearities in hard superconductors such as surface impedance of a type II superconductimg half space and harmonic generation and intermodulation due to alternating transport currents; and nonlinearities in superconducting weak links such as harmonic generation by a long Josephson Junction in a superconducting slab.

1997-10-08

110

Low temperature formation of shallow p{sup +}n junctions by BF{sub 2}{sup +} implantation into thin Pd{sub 2}Si films on Si substrates  

Energy Technology Data Exchange (ETDEWEB)

Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during ...

1995-05-01

111

Increased superoxide in vivo accelerates age-associated muscle atrophy through mitochondrial dysfunction and neuromuscular junction degeneration  

UK PubMed Central (United Kingdom)

Oxidative stress has been implicated in the etiology of age-related muscle loss (sarcopenia). However, the underlying mechanisms by which oxidative stress contributes to sarcopenia have not been thoroughly...Full Text Available

2010-05-01

112

High Efficiency Solar Cell on Low Cost Metal Foil Substrate  

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

113

Cadherin Mechanics and Complexation: The Importance of Calcium Binding  

UK PubMed Central (United Kingdom)

E-cadherins belong to a family of membrane-bound, cellular adhesion proteins. Their adhesive properties mainly involve the two N-terminal extracellular domains (EC1 and EC2). The junctions between these...Full Text Available

2005-12-01

114

A Mouse Model Expressing a Truncated Form of Ameloblastin Exhibits Dental and Junctional Epithelium Defects  

UK PubMed Central (United Kingdom)

SUMMARYAmeloblastin (AMBN) is the second most abundant extracellular matrix protein produced by the epithelial cells called ameloblasts and is found mainly in forming dental enamel....Full Text Available

2009-06-01

115

Method of fusing segments of armored logging cables  

Energy Technology Data Exchange (ETDEWEB)

The method is used for repairing armored logging cables. It consists of preparing armor, subsequent connection of current-conducting strands and wires of the armor, and laying of the armor. Sections of connecting the wires of the armor of the lower and upper layers are scattered over the length of the fused section of the cable. In order to improve the fault strength of the cable, the junctions of connection of the armor wires are scattered among themselves at a distance determined by the Euler formula, and thermal tempering of the wire sections is carried out near these junctions, and then the fused section of the cable is reinforced.

1982-01-01

116

Entangled quantum currents in distant mesoscopic Josephson junctions  

Energy Technology Data Exchange (ETDEWEB)

Two mesoscopic SQUID rings which are far from each other are considered. A source of two-mode nonclassical microwaves irradiates the two rings with correlated photons. The Josephson currents are in this case quantum mechanical operators, and their expectation values with respect to the density matrix of the microwaves yield the experimentally observed currents. Classically correlated (separable) and quantum mechanically correlated (entangled) microwaves are considered, and their effect on the Josephson currents is quantified. Results for two different examples that involve microwaves in number states and coherent states are derived. It is shown that the quantum statistics of the tunnelling electron pairs through the Josephson junctions in the two rings are correlated.

2004-12-22

117

Computed Tomography of the cranio-cervical junction in rhematoid arthritis  

International Nuclear Information System (INIS)

Twenty rheumatoid arthritis (RA) patients with involvement of the cranio-cervical junction (CCJ) were given CT scan. In most cases the myelo-CT technique with the lumbar injection of small quantities of non-ionic contrast medium was adopted; CT easily diagnosed the horizontal and vertical dislocations on the CCJ, the bone strcture lesions and the inflammatory masses. A high frequency of medullary compressions was also found in these patients. Myelo-CT appears to be the technique of choice for the precise definition of the various factors responsible for the neurological complications found in RA of the CCJ.

1987-01-01

118

Transatlantic Initiative for Nanotechnology and the Environment - A new robust insitu tool for measuring nanoparticles and assessing their effects  

Environmental Research Database

ObjectivesWe have developed a life cycle perspective inspired conceptual model (CM) that suggests the importance of terrestrial ecosystems as a major repository of ZnO, TiO2, and Ag (Tier 1) manufactured nanomaterials (MNMs) introduced via the land application of MNM-containing biosolids. We propose to investigate the transport, fate, behavior, bioavailability, and effects of MNMs in(to) agroecosystems under environmentally realistic scenarios organized around three key hypotheses: Hypothesis (H1) Surface [continued...]DescriptionWe have developed a life cycle perspective inspired conceptual model (CM) that suggests the importance of terrestrial ecosystems as a major repository of ZnO, TiO2, and Ag (Tier 1) manufactured nanomaterials (MNMs) introduced via the land application of MNM-containing biosolids. We propose to investigate the transport, fate, behavior, bioavailability, and effects of MNMs in(to) agroecosystems under environmentally ...

2013-01-30

119

Surface oxidation processes in compound semiconductors studied by profile imaging  

International Nuclear Information System (INIS)

The profile imaging technique is used to study the oxidation of ZnTe and InP surfaces induced by in situ reaction due to the electron beam of the microscope and by ex situ heating in air. For both materials, in situ reaction with the electron beam resulted in desorption of the anion species and the formation of the metal oxide. The observation of In metal particles, and the fact that the rate of formation of In_2O_3 was substantially reduced by an improvement of the vacuum near the specimen region, suggested that the presence of oxygen is not involved in the desorption process. The ex situ heating of ZnTe up to 260 degrees C in air resulted in crystals of ZnO and Te metal, generally in a layered surface region with the sequence of ZnTe/Te/ZnO. The large Te crystals usually had an epitaxial relationship with the bulk ZnTe but the small ZnO crystals had random orientations. The ex situ heating of InP to 380 degrees C in air only gave rise to ...

120

Organic against inorganic electrodes grown onto polymer substrates for flexible organic electronics applications  

Energy Technology Data Exchange (ETDEWEB)

One of the most challenging topics in the area of organic electronic devices is the growth of transparent electrodes onto flexible polymeric substrates that will be characterized by enhanced conductivity in combination with high optical transparency. An essential aspect for these materials is their synthesis and/or microstructure which define the transparency, the stability and the interfacial chemistry which in turn determine the performance and stability of the organic electronic devices, such as organic light emitting diodes, organic photovoltaics, etc. In this work, we will discuss the latest advances in the growth of organic (e.g. PEDOT:PSS) and inorganic (e.g. zinc oxide-ZnO, indium tin oxide-ITO) conductive materials and their deposition onto flexible polymeric substrates. We will compare the optical, structural, nano-mechanical and nano-topographical properties of the inorganic and organic materials and we investigate the effect of their structure on their properties and ...

2009-12-15

121

Economic evaluation of the solar carbothermic reduction of ZnO by using a single sensitivity analysis and a Monte-Carlo risk analysis  

Energy Technology Data Exchange (ETDEWEB)

The technical feasibility of the solar carbothermal reduction of ZnO has been successfully demonstrated in a pilot plant. The economics of this process is addressed by means of a single sensitivity analysis and a Monte-Carlo risk analysis. A medium-term and a long-term scenario have been investigated, each for a 5 and a 30 MW{sub th} plant. For a discount rate of 15% the zinc production costs vary between 482 and 245 $/t for the medium-term scenario and between 312 and 146 $/t for the long-term scenario, respectively. These costs do not account for the zinc oxide input material. In addition, a risk analysis was conducted for the 30 MW{sub th} long-term scenario. For each input parameter, a probability distribution was estimated and the probability distribution of the zinc production cost was calculated by means of a Monte-Carlo method. The expected mean zinc production costs vary from 95 $/t for a discount rate of 0%-286 $/t for a discount rate of 40%. (author)

2007-07-15

122

Depleted zinc: Properties, application, production  

Energy Technology Data Exchange (ETDEWEB)

The addition of ZnO, depleted in the Zn-64 isotope, to the water of boiling water nuclear reactors lessens the accumulation of Co-60 on the reactor interior surfaces, reduces radioactive wastes and increases the reactor service-life because of the inhibitory action of zinc on inter-granular stress corrosion cracking. To the same effect depleted zinc in the form of acetate dihydrate is used in pressurized water reactors. Gas centrifuge isotope separation method is applied for production of depleted zinc on the industrial scale. More than 20 years of depleted zinc application history demonstrates its benefits for reduction of NPP personnel radiation exposure and combating construction materials corrosion.

2009-07-15

123

High spin states of some nuclei around the N=Z=28 double closed shell  

Energy Technology Data Exchange (ETDEWEB)

A spectroscopic study is performed for high spin states of {sup 55}Fe, {sup 55}Co and {sup 57}Ni. To populate the investigated residues with a relevant cross section, the fusion evaporation reactions of {sup 30}Si({sup 28}Si, 2pn){sup 55}Fe, {sup 30}Si({sup 28}Si, 2pn){sup 55}Co and {sup 4}He({sup 54}Fe, n){sup 57}Ni were chosen. To identify the new {gamma} transitions and to build the energy level schemes, {gamma}-{gamma} coincidence techniques together with excitation functions were employed. Angular distributions and {gamma}-{gamma} angular correlations allowed us to assign the spin values of the nuclear states. The previous level scheme of {sup 55}Fe is extended into the region between 6.5-11 MeV of excitation energy, up to spin 27/2, while the yrast decay pathos of {sup 57}Ni and {sup 55}Co are reported here for the first time. Experimental data are fairly well reproduced by Glaudemans' shell model calculations. (orig.).

1989-12-01

124

High spin states of some nuclei around the N=Z=28 double closed shell  

International Nuclear Information System (INIS)

A spectroscopic study is performed for high spin states of "5"5Fe, "5"5Co and "5"7Ni. To populate the investigated residues with a relevant cross section, the fusion evaporation reactions of "3"0Si("2"8Si, 2pn)"5"5Fe, "3"0Si("2"8Si, 2pn)"5"5Co and "4He("5"4Fe, n)"5"7Ni were chosen. To identify the new #gamma# transitions and to build the energy level schemes, #gamma#-#gamma# coincidence techniques together with excitation functions were employed. Angular distributions and #gamma#-#gamma# angular correlations allowed us to assign the spin values of the nuclear states. The previous level scheme of "5"5Fe is extended into the region between 6.5-11 MeV of excitation energy, up to spin 27/2, while the yrast decay pathos of "5"7Ni and "5"5Co are reported here for the first time. Experimental data are fairly well reproduced by Glaudemans' shell model calculations. (orig.).

1989-01-01

125

Gravitational field and equations of motion of spinning compact binaries to 2.5 post-Newtonian order  

CERN Document Server

We derive spin-orbit coupling effects on the gravitational field and equations of motion of compact binaries in the 2.5 post-Newtonian approximation to general relativity, one PN order beyond where spin effects first appear. Our method is based on that of Blanchet, Faye, and Ponsot, who use a post-Newtonian metric valid for general (continuous) fluids and represent pointlike compact objects with a delta-function stress-energy tensor, regularizing divergent terms by taking the Hadamard finite part. To obtain post-Newtonian spin effects, we use a different delta-function stress-energy tensor introduced by Bailey and Israel. In a future paper we will use the 2.5PN equations of motion for spinning bodies to derive the gravitational-wave luminosity and phase evolution of binary inspirals, which will be useful in constructing matched filters for signal analysis. The gravitational field derived here may help in posing initial data for numerical ...

2001-01-01

126

Thermal annealing effect on optical properties of electrodeposited ZnO thin films  

Energy Technology Data Exchange (ETDEWEB)

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible ...

2008-10-07

127

Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)  

Energy Technology Data Exchange (ETDEWEB)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(lambda) and reflectance R(lambda) spectra. Conjoint optical and ...

2009-10-19

128

Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)  

International Nuclear Information System (INIS)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint optical and thermal properties were deduced from the optical ...

2009-10-19

129

Depth Profiling of N and C in Ion Implanted ZnO and Si Using Deuterium Induced Nuclear Reaction Analysis  

International Nuclear Information System (INIS)

Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion implanter chamber greatly reduces the amount of carbon impurity on the surface of ...

2008-11-03

130

Responses of hybrid poplar clones and red maple seedlings to ambient O_3 under differing light within a mixed hardwood forest  

International Nuclear Information System (INIS)

The responses of ramets of hybrid poplar (Populus spp.) (HP) clones NE388 and NE359, and seedlings of red maple (Acer rubrum, L.) to ambient ozone (O_3) were studied during May-September of 2000 and 2001 under natural forest conditions and differing natural sunlight exposures (sun, partial shade and full shade). Ambient O_3 concentrations at the study site reached hourly peaks of 109 and 98 ppb in 2000 and 2001, respectively. Monthly 12-h average O_3 concentrations ranged from 32.3 to 52.9 ppb. Weekly 12-h average photosynthetically active radiation (PAR) within the sun, partial shade and full shade plots ranged from 200 to 750, 50 to 180, and 25 to 75 #mu#mol m"-"2 s"-"1, respectively. Ambient O_3 exposure induced visible foliar symptoms on HP NE388 and NE359 in both growing seasons, with more severe injury observed on NE388 than on NE359. Slight foliar symptoms were observed on red maple seedlings during the 2001growing season. Percentage of total leaf area affected (%LAA) was ...

2004-07-01

131

Neutron cross section measurements using the Oak Ridge electron linear accelerator  

Energy Technology Data Exchange (ETDEWEB)

During this reporting period, the work supported under DOE Grant No. FG02-87ER40326.A003 has resulted in one publication, two papers submitted to Phys. Rev. C for publication, and one paper presented at a professional meeting. During this period, modifications were made to the interactive R-Matrix fitting computer program DSIG to include the total radiation widths in the R-Matrix calculation of the cross section. The R-Matrix analyses of n+{sup 90}Zr and n+{sup 208}Pn have already begun.

1990-08-01

132

Measurements of "8"8Sr(p,n) to the ground state and low-lying excited states of "8"8Y  

International Nuclear Information System (INIS)

The (p,n) cross section on "8"8Sr was measured for proton energies between 5.75 and 11 MeV. Overall resolution was sufficient to separate the "8"8Y ground state (J/sup #pi#/ = 4"-), the first excited state (J/sup #pi#/ = 5"-) at 0.232 MeV, and the second excited state (J/sup #pi#/ = 1"+) at 0.393 MeV. A Legendre polynomial fit was made to the angular distributions and the resulting integrated cross sections are shown. 1 figure.

1980-03-13

133

Concentrated particle-hole strength observed in 0h#omega# stretched-state excitations  

International Nuclear Information System (INIS)

The wide-angle spectra of the 134-MeV (p,n) reaction on "4"8Ca, "5"4Fe, "8"8Sr, and "2"0"8Pb are each dominated by the excitation of a single state at low excitation energy. These excitations correspond to the ''0h#omega#'' stretched states and are seen to be fragmented much less than ''1h#omega#'' stretched states in medium- and heavy-mass nuclei. The normalization factors required for comparison with distorted-wave impulse-approximation calculations are >0.50 and indicate that these are the purest particle-hole states known in these nuclei.

134

Tomography and Methods of Travel-Time Calculation for Regional Seismic Location  

Energy Technology Data Exchange (ETDEWEB)

We are developing a laterally variable velocity model of the crust and upper mantle across Eurasia and North Africa to reduce event location error by improving regional travel-time prediction accuracy. The model includes both P and S velocities and we describe methods to compute travel-times for Pn, Sn, Pg, and Lg phases. For crustal phases Pg and Lg we assume that the waves travel laterally at mid-crustal depths, with added ray segments from the event and station to the mid crustal layer. Our work on Pn and Sn travel-times extends the methods described by Zhao and Xie (1993). With consideration for a continent scale model and application to seismic location, we extend the model parameterization of Zhao and Xie (1993) by allowing the upper-mantle velocity gradient to vary laterally. This extension is needed to accommodate the large variation in gradient that is known to exist across Eurasia and North African. Further, we extend the linear ...

2007-07-02

135

Temperature dependence of the performance of ultraviolet detectors  

Energy Technology Data Exchange (ETDEWEB)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric field in the ...

2003-08-21

136

Temperature dependence of the performance of ultraviolet detectors  

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric field in the ...

2003-08-21

137

Stoichiometry of photorespiration during C3-photosynthesis is not fixed: evidence from combined physical and stereochemical methods  

Energy Technology Data Exchange (ETDEWEB)

The stoichiometry of photorespiration, S, is defined as the fraction of glycolate carbon photorespired. It is postulated that under steady-state conditions there are two determinants of the ratio of photorespiration to net photosynthesis: the partitioning of ribulose bisphosphate between oxidation and carboxylation, and the partitioning of glycolate between reactions leading to complete oxidation to CO/sub 2/ (S . 100%) and those yielding CO/sub 2/ plus serine (S . 25%). S may be calculated using two independent probes of the system. The physical probe, using an infrared gas analyzer, measured photorespiration and net photosynthesis, and hence their ratio PR/NPS . pn(phys). The metabolic probe employed tracer (3R)-D-(3-/sup 3/H1,3-/sup 14/C)glyceric acid to determine r, the fraction of /sup 3/H retained in the triose phosphates leaving the chloroplasts. It is deduced from the postulated model that S . pn(phys) . r/(1 - r). Experiments have been ...

1985-03-01

138

Chronic treatment with polychlorinated biphenyls (PCB) during pregnancy and lactation in the rat  

International Nuclear Information System (INIS)

The gender-specific expression pattern of aromatase and 5alpha-reductases (5alpha-R) during brain development provides neurons the right amount of estradiol and DHT to induce a dimorphic organization of the structure. Polychlorinated biphenyls (PCBs) are endocrine disruptive pollutants; exposure to PCBs through placental transfer and breast-feeding may adversely affect the organizational action of sex steroid, resulting in long-term alteration of reproductive neuroendocrinology. The study was aimed at: a) evaluating the hypothalamic expression of aromatase, 5alpha-R1 and 5alpha-R2 in fetuses (GD20), infant (PN12), weaning (PN21) and young adult (PN60) male and female rats exposed to PCBs during development; b) correlating these parameters with the time of testicular descent, puberty onset, estrous cyclicity and copulatory behavior; c) evaluating possible alterations of some non reproductive behaviors (locomotion, learning ...

2009-08-15

139

Experimental estimation of the hot spot size in Nb-based Josephson tunnel junctions using Abrikosov vortices  

Energy Technology Data Exchange (ETDEWEB)

We report on a new experimental approach to the size estimation of the hot spot induced by ionizing particles in a Josephson tunnel junction. Here, in contrast to the case of a superconducting strip, it is possible to investigate the hot spot dynamics in absence of effects due to the heating induced by the bias current. The reported experiment is based on the motion of Abrikosov vortices, trapped in the thin films constituting the junction electrodes, under 5.6 MeV {alpha}-particle irradiation. The fast time evolution of a hot spot, combined with the presence of Abrikosov vortices, produces a change of the static magnetic field in the junction area and thus a change of the critical current value, I{sub c}. Measurements of I{sub c} during the {alpha}-particle irradiation and in presence of trapped Abrikosov vortices allow to determine the rate of appearance of those I{sub c} changes. The behavior of the average appearance ...

1997-11-01

140

String Junctions and Holographic Interfaces  

CERN Document Server

In this paper we study half-BPS type IIB supergravity solutions with multiple $AdS_3\\times S^3\\times M_4$ asymptotic regions, where $M_4$ is either $T^4$ or $K_3$. These solutions were first constructed in [1] and have geometries given by the warped product of $AdS_2 \\times S^2 \\times M_4 $ over $\\Sigma$, where $\\Sigma$ is a Riemann surface. We show that the holographic boundary has the structure of a star graph, i.e. $n$ half-lines joined at a point. The attractor mechanism and the relation of the solutions to junctions of self-dual strings in six-dimensional supergravity are discussed. The solutions of [1] are constructed introducing two meromorphic and two harmonic functions defined on $\\Sigma$. We focus our analysis on solutions corresponding to junctions of three different conformal field theories and show that the conditions for having a solution charged only under Ramond-Ramond three-form fields reduce to relations involving the ...

2010-01-01

141

Magnetic susceptibility of P{sup +}N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised  

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results are discussed in ...

2003-09-15

142

A comparative study on ultra-shallow junction formation using co-implantation with fluorine or carbon in pre-amorphized silicon  

Energy Technology Data Exchange (ETDEWEB)

The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.

2005-12-05

143

Pinned fluxons in a Josephson junction with a finite-length inhomogeneity  

CERN Document Server

We consider a Josephson junction system installed with a finite length inhomogeneity, either of microresistor or of microresonator type. The system can be modelled by a sine-Gordon equation with a piecewise-constant function to represent the varying Josephson tunneling critical current. The existence of pinned fluxons depends on the length of the inhomogeneity, the variation in the Josephson tunneling critical current and the applied bias current. We establish that a system may either not be able to sustain a pinned fluxon, or - for instance by varying the length of the inhomogeneity - may exhibit various different types of pinned fluxons. Our stability analysis shows that changes of stability can only occur at critical points of the length of the inhomogeneity as a function of the (Hamiltonian) energy density inside the inhomogeneity - a relation we determine explicitly. In combination with continuation arguments and Sturm-Liouville theory, we determine the ...

2011-01-01

144

Outcomes and Cost Analysis of Pyeloplasty for Antenatally Diagnosed Ureteropelvic Junction Obstruction Using Markov Models  

British Library Electronic Table of Contents (United Kingdom)

Objectives The optimal timing of pyeloplasty for children diagnosed with ureteropelvic junction obstruction (UPJO) after workup for antenatal hydronephrosis is disputed. We sought to examine the potential costs and clinical outcomes of treatment protocols featuring different indications for pediatric pyeloplasty using Markov models. Methods Cost and outcomes analysis using Markov modeling was performed for three treatment algorithms: medical management, immediate pyeloplasty (during the first year of life), and pyeloplasty after no improvement on imaging. The costs were determined from the perspective of the medical institution. The variables tracked during Markov model simulation included age at resolution of UPJO, the proportion of patients with worsened hydronephrosis, the number of pye...

2008-01-01

145

Focused ion beam fabrication and properties of nanoscale Josephson junctions for sensors and other applications  

International Nuclear Information System (INIS)

The methods of superconducting device fabrication by lithography and multilevel processing usually require a number of processing steps with lithographic resolution and alignment adequate for the scale of the device be fabricated. As an alternative, the focused ion beam (FIB) microscope is increasingly being used directly to fabricate devices. A major advantage of using a FIB compared to other lithography methods is its flexibility and high resolution. It allows in-situ, milling (#propor to#5 nm at a beam current of 1 pA) to a variety of depths, and imaging (2 nm) of the sample. In this paper we describe our development of junction fabrication techniques using the FIB and their application in creating a range of potential sensor devices and quantum electronics applications. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2005-03-01

146

Breathers in Josephson junction ladders: Resonances and electromagnetic wave spectroscopy  

DEFF Research Database (Denmark)

We present a theoretical study of the resonant interaction between dynamical localized states (discrete breathers) and linear electromagnetic excitations (EE's) in Josephson junction ladders. By making use of direct numerical simulations we find that such an interaction manifests itself by resonant steps and various sharp switchings (voltage jumps) in the current-voltage characteristics. Moreover, the power of ac oscillations away from the breather center (the breather tail) displays singularities as the externally applied dc bias decreases. All these features may be mapped to the spectrum of EE's that has been derived analytically and numerically. Using an improved analysis of the breather tail, a spectroscopy of the EE's is developed, The nature of breather instability driven by localized EE's is established.

2001-01-01

147

Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

1991-05-01

148

Synthesis and enhanced light absorption of alumina matrix nanocomposites containing multilayer oxide nanorods and silver nanoparticles  

British Library Electronic Table of Contents (United Kingdom)

In this paper, multilayer oxide nanorods were deposited in the nanopores of anodic aluminum oxide (AAO) via solution infiltration followed by heat treatment. The nanorods have a core-shell structure. First, the shell (nanotube) with the thickness of about 40nm was made of TiO"2 through the hydrolysis of (NH"4)"2TiF"6. Second, silver nanoparticles with the diameter of about 3nm were added into the TiO"2 layer through thermal decomposition of AgNO"3 at elevated temperatures. Then, cylindrical cores (nanorods) of CoO and ZnO with 200nm diameter were prepared, respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the structure and composition of the nanorods. UV-vis light absorption measurements in the wavelength range from 350 to...

2011-01-01

149

Synchrotron SAXS Studies of Nanostructured Materials and Colloidal Solutions: A Review  

Scientific Electronic Library Online (English)

Abstract in english Structural characterisations using the SAXS technique in a number of nanoheterogeneous materials and liquid solutions are reviewed. The studied systems are protein (lysozyme)/water solutions, colloidal ZnO particles/water sols, nanoporous NiO-based xerogels, hybrid organic-inorganic siloxane-PEG and PPG nanocomposites and PbTe semiconductor nanocrystals embedded in a glass matrix. These investigations also focus on the transformations of time-varying structures and on str (more) uctural changes related to variations in temperature and composition. The reviewed investigations aim at explaining the unusual and often interesting properties of nanostructured materials and solutions. Most of the reported studies were carried out using the SAXS beamline at the National Synchrotron Light Laboratory (LNLS), Campinas, Brazil.

2002-03-01

150

Oxygen reduction reaction on electrodeposited zinc oxide electrodes in KCl solution at 70 deg. C  

Energy Technology Data Exchange (ETDEWEB)

The reduction of oxygen was studied in 0.1 M KCl at 70 deg. C using the rotating disk electrode (RDE) technique on platinum and electrodeposited ZnO thin film electrodes deposited on platinum substrates. In the absence of Zn{sup 2+} ions in solution, a Tafel slope of 139 mV dec{sup -1} was obtained, a value close to that measured on bare platinum electrode (133 mV dec{sup -1}) and ascribed to the limitation of the reaction rate by the first electron transfer. The main difference between the noble metal and the oxide electrode was a shift of the curves towards more negative potentials. In the presence of Zn{sup 2+} ions, the current density decreased significantly and the Tafel slope was measured at 282 mV dec{sup -1} showing that the electrode was partially blocked by zinc oxide formation reaction intermediates.

2006-04-01

151

Mathematical modeling of a primary zinc/air battery  

Energy Technology Data Exchange (ETDEWEB)

This paper reports on the mathematical model developed by Sunu and Bennion that has been extended to include the separator, precipitation of both solid ZnO and K{sub 2}Zn(OH){sub 4}, and the air electrode, and has been used to investigate the behavior of a primary Zn-Air battery with respect to battery design features. Predictions obtained from the model indicate that anode material utilization is predominantly limited by depletion of the concentration of hydroxide ions. The effect of electrode thickness on anode material utilization is insignificant, whereas material loading per unit volume has a great effect on anode material utilization; a higher loading lowers both the anode material utilization and delivered capacity. Use of a thick separator will increase the anode material utilization, but may reduce the cell voltage.

1992-04-01

152

Frequency upconversion properties of Ag: TeO2?ZnO nanocomposites codoped with Yb3+ and Tm3+ ions  

British Library Electronic Table of Contents (United Kingdom)

Yb3+?Tm3+ codoped tellurite glasses containing silver nanoparticles (NPs) were synthesized and characterized using transmission electron microscopy and optical techniques. The samples? composition and the nucleation of NPs were investigated using electron diffraction and energy dispersive spectroscopy. For the optical experiments, the samples were excited using a diode laser operating at 980?nm, in resonance with the Yb3+ transition 2F7/2?2F5/2. Photoluminescence (PL) bands corresponding to Tm3+ transitions were observed at 480, 650, and 800?nm due to the Yb3+? Tm3+ energy transfer. PL enhancement was achieved by heat-treatment of the samples at 325?C during different time intervals. The growth of the PL bands correlates with the increase of the silver NPs concentration. The relevant mecha...

2011-01-01

153

Flame retardancy of polybutylene terephthalate blended with various oxides  

British Library Electronic Table of Contents (United Kingdom)

The flame retardancy of polybutylene terephthalate (PBT) was studied focusing on the effect of various oxides. Thermo-gravimetric analysis, pyrolysis/gas chromatography/mass spectrometry, and elemental analysis (EA) were used to analyze the flame retardancy, which were observed through the UL-test and a cone calorimeter. Many oxides influenced the flame retardancy and some of them could suppress the flammability of PBT. In particular, the blended-PBTs with ZnO and V2O5 accelerated the degradation and the edges of oxygen consumption were shorter than neat-PBT although the flammability became poorer. The quantitative analysis of the scission products and the results of EA showed that hydrolysis, successive dehydration, and other various reactions changed the scission route to generate less f...

2008-01-01

154

Dielectric behaviour of emeraldine base polymer?ZnO nanocomposite film in the low to medium frequency  

British Library Electronic Table of Contents (United Kingdom)

Emeraldine base (EB) polymer?ZnO nanoparticles composite films has been synthesized by solution casting technique on ITO-coated glass substrate and characterized by XRD, FTIR and TEM for their structure and morphology. Dielectric behaviour of these composite films has been investigated in the very low frequency region to medium frequency region (1?kHz?1?MHz). The dielectric constant of the composite with 30% nanoparticles is almost one-tenth of the pure EB. The dielectric value becomes constant in the frequency region greater than 400?kHz. The change in dielectric behaviour of the composite is explained on the basis of multilayered interface formed between the ZnO nanoparticles and emeraldine chains. Nanoparticles have high energy surface which is responsible for the decrease of free volum...

2011-01-01

155

Interaction of antimicrobial peptides with lipid membranes  

International Nuclear Information System (INIS)

This study aims to investigate the difference in the interaction of antimicrobial peptides with two classes of zwitterionic peptides, phosphatidylethanolamines (PE) and phosphatidylcholines (PC). Further experiments were performed on model membranes prepared from specific bacterial lipids, lipopolysaccharides (LPS) isolated from Salmonella minnesota. The structure of the lipid-peptide aqueous dispersions was studied by small-and wide-angle X-ray diffraction during heating and cooling from 5 to 85 C. The lipids and peptides were mixed at lipid-to-peptide ratios 10-10000 (POPE and POPC) or 2-50 (LPS). All experiments were performed at synchrotron soft condensed matter beamline A2 in Hasylab at Desy in Hamburg, Germany. The phases were identified and the lattice parameters were calculated. Alamethicin and melittin interact in similar ways with the lipids. Pure POPC forms only lamellar phases. POPE forms lamellar phases at low temperatures that upon heating transform into a highly curved ...

156

Chemical composition and electronic structure of passive films formed on Alloy 600 in acidic solution  

Energy Technology Data Exchange (ETDEWEB)

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

2008-03-15

157

Chemical composition and electronic structure of passive films formed on Alloy 600 in acidic solution  

International Nuclear Information System (INIS)

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

2008-03-01

158

Capacitive behaviour and electronic structure of passive films formed on nickel base alloy type Inconel 600; influence of Cr and Fe  

International Nuclear Information System (INIS)

The study of passive films formed on a nickel base alloy type Inconel 600 is performed by capacitance measurements (Mott-Schottky approach). This research is supported by the passivation study of the alloying elements Ni, Cr, Fe and high purity alloys Ni-Cr, Ni-Fe, Ni-Cr-Fe. The results obtained show that the capacitive behaviour of the Inconel 600 in the passive state is similar to that on a p-n heterojunction to which a barrier zone of nickel oxide is added. The individual or combined action of alloying elements on the development of this kind of electronic structure is discussed. (authors). 5 refs., 6 figs.

1994-01-01

159

A note on the examination of isospin effects in multi-dimensional Langevin fission dynamics  

British Library Electronic Table of Contents (United Kingdom)

In [W. Ye, F. Wu, H.W. Yang, Phys. Lett. B 647 (2007) 118] prescission protons and ? particles of high-isospin 206Pb were shown to be almost independent of the dissipation strength Formula Not Shown . Subsequently, in [P.N. Nadtochy, et al., Phys. Lett. B 685 (2010) 258] prescission light charged particles (LCPs) were shown to have approximately the same sensitivity as neutrons to Formula Not Shown for 206Pb and 204Hg nuclei. In this Letter we point out that the reason for the apparent contradictory conclusions is that the authors in the latter did not compute the changes in the absolute yields of prescission LCPs multiplicities with increasing Formula Not Shown and compare them with typical experimental uncertainties. It is shown that the expected changes are very small in the case of ne...

2011-01-01

160

A logarithmic time complexity algorithm for pattern searching using product-sum property  

British Library Electronic Table of Contents (United Kingdom)

Product-sum property states that an ordered pair (s"n,p"n) is unique for any ordered set a"1,a"2,...,a"n where a"i,n@?N, and s"n and p"n are the sum and product of the elements of the set, respectively. This fact has been exploited to develop an O(log(M)) time complexity algorithm for pattern searching in a large dataset, where M is the number of records in the dataset. Two potential applications (from databases and computational biology) of this property have been demonstrated to show the effectiveness and working of the proposed algorithm. The space complexity of the algorithm rises to the quadratic order.

2011-01-01

161

A connecting coupling  

Energy Technology Data Exchange (ETDEWEB)

The flexible, insulated, single strand cables are electrically connected with a cylindrical polar tip (PN) by means of cylindrical and conical shafts for the polar tips, which enter the faces of the divided, multiwire strand, clamped by tension half couplings. The flat ends of the polar tips being joined are positioned in two concentric mandrel bushings, an internal fixed one and an external, axially movable bushing (PV). The internal bushing is rigidly attached to the end of the left polar tip and equipped with three or four rounded, radial openings, whose diameter is determined by the external diameter of the locking device hinges (ShF) of the connecting couplings. The right polar tip is equipped with an annular channel of trapezoidal section into which the locking device hinges enter. The external movable bushing on the right side has a conical turning and on the left, a cylindrical into which the cylindrical spring which holds the movable bushing in the extreme ...

1981-06-05

162

Tunneling spectroscopy of anisotropic superconductors  

Energy Technology Data Exchange (ETDEWEB)

Tunneling spectroscopy of normal-insulator-superconductor junction is investigated theoretically. In anisotropic superconductors, differently from the case of isotropic superconductor, the effective pair potentials felt by quasiparticles depend on the direction of their motion. By taking this effect into account, it is shown that the conductance spectra strongly depend on the crystal orientation. Using Green`s function method, local density of states (LDOS) in superconductor is also calculated. The close relation between conductance spectra and LDOS is presented. The calculation is compared with experimental spectra of high-{Tc} superconductors.

1996-12-31

163

Transient enhanced diffusion and deactivation of ion-implanted As in strained Si  

International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

2005-08-01

164

Schottky barrier and homojunction gallium arsenide solar cells  

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar cells were fabricated using several techniques. One involved ...

1983-01-01

165

Roentgenologic appearance of a thorotrast-induced small cholangiocarcinoma in a case of thorotrastosis  

International Nuclear Information System (INIS)

A small cholangiocarcinoma was detected at autopsy in a patient with thorotrastosis who died from the rupture of esophageal varices at the esophagogastric junction. Prior to the advent of recent diagnostic imaging technique, a correct antemortem diagnosis could only be obtained from tumor markers. However, the tendency for the opacity of the liver to decrease slowly with time and develop uneven trabeculation suggests that small tumors may be difficult to detect against such a non-homogeneous background. (author).

166

Modeling of the kinetics of dislocation loops  

Energy Technology Data Exchange (ETDEWEB)

The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.

1999-01-01

167

Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation  

Energy Technology Data Exchange (ETDEWEB)

A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening ...

2002-01-01

168

GNOM-LIKE1/ERMO1 and SEC24a/ERMO2 Are Required for Maintenance of Endoplasmic Reticulum Morphology in Arabidopsis thaliana[W  

UK PubMed Central (United Kingdom)

The endoplasmic reticulum (ER) is composed of tubules, sheets, and three-way junctions, resulting in a highly conserved polygonal network in all eukaryotes. The molecular mechanisms responsible for...Full Text Available

2009-11-01

169

Application of Pd silicide in the process of silicon detectors  

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

1990-04-01

170

Technology base research on zinc/air battery systems: Final report  

Energy Technology Data Exchange (ETDEWEB)

The capacity extension of additives was tested in a 200 cm/sup 2/bi-cell and a Zn powder moving-bed slurry. It was found that for the Type A additives in 12 M KOH, 25 g/l of silicate provided higher capacity than stannate, titanate and aluminate additives. The optimum concentration of sorbitol (a Type B additive that stabilizes polymeric chains involving ZnO) was found to be 15 g/l in 12 M KOH. A silicate and sorbitol combination added to Zn powder slurry in 12 M KOH provided a 20% increase in discharge capacity (195 Ah/l at 200 A/cm/sup 2/) compared to the maximum capacity obtained with silicate alone. A much lower capacity (74 Ah/l) was realized with silicate as Type C additive (precipitation of ZnO away from the Zn surface, for low KOH concentrations). The mechanisms of passivation and capacity extension were discussed and a model presented. The cell voltage and power densities were determined for the discharge process as a function of (a) ...

1987-09-01

171

Materials design for semiconductor spintronics by ab initio electronic-structure calculation  

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, Fe-, Co- or Ni-doped ZnS, ZnSe and ZnTe ...

2003-04-01

172

Influence of cobalt doping on the crystalline structure, optical and mechanical properties of ZnO thin films  

International Nuclear Information System (INIS)

Uniform and transparent thin films of Zn_1_-_xCo_xO (0 #=# 0.035, CoO (cubic) was detected as the secondary phase. Influence of Co addition on the volume fraction of grain boundaries has been interpreted. Increase in Co content in the range 0 #<=# x #<=# 0.10 led to quenching of near-band edge and blue emissions, decrease in band gap energy (E_g) from 3.36 eV to 3.26 eV, decrease in film thickness and refractive index and an increase in extinction coefficient of Zn_1_-_xCo_xO thin films. The change in nature of stress from compressive to tensile with lower to higher doping of Co is corroborative with the angular peak shift of (002) plane of ZnO lattice. An overall increase in microhardness of Zn_1_-_xCo_xO thin films up to x = 0.05 is attributed to change in microstructure and evolution of secondary phase and as the secondary phase separates out the overall stress is released leading to lowering of hardness after this concentration. Hall-Petch behavior is ...

2010-07-01

173

Solid-state precursor routes to III-V type electronic (13-15) and magnetic (3-15) materials  

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess ...

1992-01-01

174

Short-wavelength (approx. <6400 A) room-temperature continuous operation of p-n In/sub 0. 5/(Al/sub x/Ga/sub 1//sub -//sub x/)/sub 0. 5/P quantum well lasers  

Science.gov (United States)

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

1988-11-07

175

Development of process technology for large-area thin-film solar modules based on compound semiconductors. Final report; Entwicklung der technologischen Grundlagen fuer grosse Photovoltaikmodule auf Basis von Duennschicht-Verbindungshalbleitern. Abschlussbericht  

Energy Technology Data Exchange (ETDEWEB)

A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, was studied and optimized by suitable patterning procedures, such ...

1998-06-01

176

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding  

International Nuclear Information System (INIS)

In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be stabilized by choosing the optimized co-implant ...

2008-12-05

177

Surface Topography of 'Hotspot' Regions from a Single Cell SRF Cavity  

Energy Technology Data Exchange (ETDEWEB)

Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitatively low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed the crystal structure surrounding the pits via crystal phase orientation mapping, while 3D profilometry gave information ...

2009-05-01

178

Point defect engineering in preamorphized silicon enriched with fluorine  

International Nuclear Information System (INIS)

Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able to completely ...

2006-12-01

179

Noise and microresonance of critical current in Josephson junction induced by Kondo trap states  

CERN Document Server

We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the ...

2011-01-01

180

Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions  

Energy Technology Data Exchange (ETDEWEB)

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co{sub 2}MnSi (CMS) and Co{sub 2}FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO{sub 2}/V/CMS/MgO/CFS and SiO{sub 2}/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co{sub 2}MnSi.

2009-05-15

181

Lithospheric evolution in response to triple junction migration: A program to obtain seismic images of the MTJ region  

Energy Technology Data Exchange (ETDEWEB)

The authors will be conducting an integrated seismic experiment to image the structure of the crust and upper mantle of northern California immediately before and after passage of the Mendocino Triple Junction. The purpose of this representation is to describe the project to other scientists interested in geological and geophysical processes in this region and to solicit input relevant to detailed siting of the funded seismic profiles. The experiment encompasses two field seasons: onshore seismic refraction/wide angle reflection data acquisition along three long profiles scheduled for late summer, 1993; and MCS deep crustal seismic reflection data acquisition accompanied by simultaneous large aperture recording using both ocean bottom and onshore seismographs, tentatively scheduled for summer, 1994. This study represents a component of a long-term, multi-disciplinary effort on the part of many investigators to exploit this well defined system as an in-situ ...

1993-04-01

182

Investigation on boron transient enhanced diffusion induced by the advanced P{sup +}/N ultra-shallow junction fabrication processes  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

2005-08-01

183

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films  

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

184

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films  

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

1993-07-16

185

Copy number and orientation determine the susceptibility of a gene to silencing by nearby heterochromatin in Drosophila  

Energy Technology Data Exchange (ETDEWEB)

The classical phenomenon of position-effect variegation (PEV) is the mosaic expression that occurs when a chromosomal rearrangements moves a euchromatic gene near heterochromatin. A striking feature of this phenomenon is that genes far away from the junction with heterochromatin can be affected, as if the heterochromatic state {open_quotes}spreads.{close_quotes} We have investigated classical PEV of a Drosophila brown transgene affected by a heterochromatic junction {approximately} 60 kb away. PEV was enhanced when the transgene was locally duplicated using P transposase. Successive rounds of P transpose mutagenesis and phenotypic selection produced a series of PEV alleles with differences in phenotype that depended on transgene copy number and orientation. As for other examples of classical PEV, nearby heterochromatin was required for gene silencing. Modifications of classical PEV by alterations at a single site are unexpected, and these ...

1996-02-01

186

Aluminum-containing intergranular phases in hot-pressed silicon carbide  

Energy Technology Data Exchange (ETDEWEB)

Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a SiC-Al2OC liquid domain is to be included in this ...

2003-01-12

187

Some sources of error in property indices for coke-oven charge  

Science.gov (United States)

The author points out that errors in certain measurements are preventing improvements in coke: thermocouples (errors caused by the thermocouple installation and variations in the temperature of the cold junctions); dilatometers (errors caused by size of heating block and differences in starting temperature led to differences between two instruments); errors in measuring the bulk density of the coking charge. The elimination of these sources of error in determinations of the technological and physical properties of coke oven charge should assist in the study of other problems which are delaying improvements in blast furnace coke production.

1981-01-01

188

Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation  

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

2007-09-25

189

Si-JFET devices and related noise behavior under irradiation  

Energy Technology Data Exchange (ETDEWEB)

Monolithic N-channel junction field effect transistors (NJFETs) dc characteristics, small signal parameters and noise have been studied from 300 K down to cryogenic temperatures before and after irradiation with {sup 60}Co {gamma}-rays and fast neutrons (1 MeV). Radiation induced effects on dc parameters and noise are reviewed. Noise spectral density measurements performed at various temperatures have shown that the radiation induces a noise increase which is temperature and frequency dependent. (orig.). 14 refs.

1998-02-01

190

Roentgenological analysis of sternocostoclavicular hyperostosis by computed tomography  

Energy Technology Data Exchange (ETDEWEB)

Roentgenological analysis of the anterior chest wall was performed in twenty six patients with sternocostoclavicular hyperostosis. Initial hyperostotic change was seen at the first costosternal junction with ventral protrusion. Hyperostosis gradually developed around the first ribs, and irregular hyperostotic changes were also seen along the costoclavicular ligaments. Even in the final stage, however, sternoclavicular joint spaces were well preserved. These findings suggest that sternocostoclavicular hyperostosis is a disorder initiated around the costal cartilage including the periosteum and perichondrium, and that arthritis is not a condition stemming from that disorder.

1989-01-01

191

Randomization of heavily damaged regions in annealed low energy Ge{sup +}-implanted (0 0 1)Si  

Energy Technology Data Exchange (ETDEWEB)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

2004-01-15

192

Randomization of heavily damaged regions in annealed low energy Ge"+-implanted (0 0 1)Si  

International Nuclear Information System (INIS)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

2004-01-01

193

On-line partial discharge measurements and off-line dielectric spectroscopy measurements of six 115 kV XLPE cable systems  

Energy Technology Data Exchange (ETDEWEB)

This paper reported on a study in which partial discharge (PD) measurements were performed on 6 underground transmission cable circuits to determine the effectiveness of PD measurements on fluid fill cables. The cables were between 37 and 56 years old. PD activity was detected from the terminations of H11L and H3L Cable 2. However, for cables from H3L Basin TS to Mill Street junction, PD activity was detected originating from within the main cable insulation.

2009-07-01

194

Josephson effect mm-wave receivers  

International Nuclear Information System (INIS)

Josephson effect heterodyne mixers with external local oscillators are very promising low noise mm-wave receivers for applications such as radio astronomy. Experiments at 36 GHz have shown that both the noise and the conversion efficiency of mixers made using Nb point contacts are in quantitative agreement with values calculated from the resistively shunted junction (RSJ) model. Preliminary measurements at 140 GHz suggest that this agreement extends to higher frequencies. In this paper the theoretical limits to the sensitivity of such receivers are explored as a function of the signal frequency. (Auth.).

195

Integrated photonic qubit quantum computing on a superconducting chip  

International Nuclear Information System (INIS)

We study a quantum computing system using microwave photons in transmission line resonators on a superconducting chip as qubits. We show that linear optics and other controls necessary for quantum computing can be implemented by coupling to Josephson devices on the same chip. By taking advantage of the strong nonlinearities in Josephson junctions, photonic qubit interactions can be realized. We analyze the gate error rate to demonstrate that our scheme is realistic even for Josephson devices with limited decoherence times. As a conceptually innovative solution based on existing technologies, our scheme provides an integrated and scalable approach to the next key milestone for photonic qubit quantum computing.

2010-06-01

196

Human experience with an endoluminal, endoscopic, gastrojejunal bypass sleeve  

British Library Electronic Table of Contents (United Kingdom)

Background This report describes the authors? experience with a unique endoluminal, endoscopically delivered and retrieved gastroduodenojejunal bypass sleeve, including short-term weight loss and changes in comorbidities. Methods A prospective, single-center trial was designed. The patients were morbidly obese individuals who met the National Institutes of Health criteria for bariatric surgery. The device used was a unique gastroduodenojejunal bypass sleeve secured at the esophagogastric junction with endoscopic and laparoscopic techniques and designed to create an endoluminal gastroduodenojejunal bypass. At completion of the trial, the device was explanted with endoscopic retrieval. The primary end points were safety and incidence of adverse events. The secondary outcomes included the per...

2011-01-01

197

HTSC devices fabricated by selective epitaxial growth  

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

1999-04-01

198

Field applications of a radon barrier to reduce indoor airborne progeny  

International Nuclear Information System (INIS)

The use of uranium mill tailings in the foundations of dwellings has resulted in indoor radon progeny concentrations and gamma exposures in excess of levels presently allowed for the general public. An account is given of the applications of an epoxy coating on the indoor faces of the concrete foundations of three buildings in Grand Junction, Colorado. Epoxy barriers were shown to be effective for preventing radon influx into structures. Gamma exposure rates must be analyzed to ensure that buildup behind the barrier will not introduce an unacceptable gamma exposure level. The use of a sealant is especially economical in situations where structural integrity may be jeopardized by physical removal of uranium mill tailings. (author).

199

Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells  

Energy Technology Data Exchange (ETDEWEB)

A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.

2004-01-25

200

Botulinum toxin—Beyond wrinkles  

British Library Electronic Table of Contents (United Kingdom)

Botulinum neurotoxin is produced by the bacterium, Clostridium botulinum. The neurotoxin inhibits acetylcholine at the neuromuscular junction, thus interfering with overall muscular contraction. Botulinum neurotoxin is commonly used for the following medical conditions: cervical dystonia, upper limb spasticity, blepharospasm, strabismus, and hyperhydrosis. However, the use of botulinum neurotoxin was recently approved for the prophylaxis of headaches in adults with chronic migraines. The proposed mechanism of botulinum neurotoxin is no longer solely limited to the inhibition of acetylcholine. There are new mechanisms emerging that involve inhibition of proinflammatory agents and neuropeptides involved in chronic pain. Consequently, there is a disruption of the overall sensory feedback loop...

2011-01-01

201

ALKALINE LEACH-FILTRATION PILOT PLANT TESTING OF HOMESTAKE ORE-SECTION 32  

Science.gov (United States)

Homestake Ore from the Ambrosia Lake District of New Mexico was treated in the Alkaline Leach-- Filtration Pilot Plant at Grand Junction, Colorado. Detailed information on grinding, leaching, flltration, and precipitation in connection with the processing of this ore is given. Autoclave leaching and continuous yellow cake precipitation were employed. The circuit liquors contnined organic material that was detrimental to clariflcation and precipitation and the results show that ihe ore was amenable to the Alkaline Leach--Filtration process only if a special additive was used. (auth)

1958-06-19

202

A Covered Nitinol Stent Fracture in a Patient with a Malignant Esophageal Stricture: A Case Report  

Energy Technology Data Exchange (ETDEWEB)

Self-expanding metallic stent insertion has been widely applied for the palliative treatment of malignant esophageal strictures. Although it is known as an easy, safe, and effective procedure, complications are well known and include things such as stent migration and esophageal stent occlusion caused by tumor in growth. However, metallic stent fractures have been rarely reported in the esophagus, especially for nitinol stents. We report a case of a stent fracture associated with migration in a patient with a malignant esophageal stricture near the gastroesophageal junction. It is highly probable that the stent fracture was due to chemical erosion of the stent caused by gastric juice

2008-11-15

203

500-kV cable lines  

Energy Technology Data Exchange (ETDEWEB)

A detailed description is given of the design, fabrication, and installation of oil-filled 500-kV cable lines used for the first time in the USSR for transmitting electric power from step-up transformers installed several meters from the hydroelectric generators to an outdoor distribution system or a junction point at which they are connected to overhead power transmission lines. These lines are 950 to 1050 m long and they are placed at levels differing by 45 m along the route. These lines can transmit power as great as 630 MV.A.

1980-01-01

204

Alterations in heart looping induced by overexpression of the tight junction protein Claudin-1 are dependent on its C-terminal cytoplasmic tail.  

Science.gov (United States)

In vertebrates, the positioning of the internal organs relative to the midline is asymmetric and evolutionarily conserved. A number of molecules have been shown to play critical roles in left-right patterning. Using representational difference analysis to identify genes that are differentially expressed on the left and right sides of the chick embryo, we cloned chick Claudin-1, an integral component of epithelial tight junctions. Here, we demonstrate that retroviral overexpression of Claudin-1, but not Claudin-3, on the right side of the chick embryo between HH stages 4 and 7 randomizes the direction of heart looping. This effect was not observed when Claudin-1 was overexpressed on the left side of the embryo. A small, but reproducible, induction of Nodal expression in the perinodal region on the right side of the embryo was noted in embryos that were injected with Claudin-1 retroviral particles on their right sides. However, no changes in Lefty,Pitx2 or cSnR ...

2006-02-24

205

Thermal effect on superhydrophobic performance of stearic acid modified ZnO nanotowers  

Energy Technology Data Exchange (ETDEWEB)

The thermal desorption of stearic acid on superhydrophobic zinc oxide nanotowers has been investigated. The stearic acid passivated zinc oxide nanotowers provide a very high contact angle of {approx}173 {+-} 1.1 deg. with a very low hysteresis of {approx}1.4 {+-} 0.5 deg. due to the presence of a binary structure composed of several nanosteps on each nanotower of height {approx}700 nm that eventually reduces the area of contact between the drop and the nanotowers and trapping more air as revealed by the field emission scanning electron microscopy images. The superhydrophobic performance of these nanotowers, however, declines following annealing at elevated temperatures. Fourier transform infrared spectra show a reduction in the intensity of stearic acid -CH{sub n} peaks at elevated temperatures revealing the cause of the decrease in contact angle and confirming the occurrence of thermal desorption at 184 deg. C. The corresponding activation energy for desorption determined from our ...

2008-02-28

206

Solar thermal production of zinc: Program strategy  

Energy Technology Data Exchange (ETDEWEB)

The solar thermal production of zinc is considered for the conversion of solar energy into storable and transportable chemical fuels. The ultimate objective is to develop a technically and economically viable technology that can produce solar zinc. The program strategy for achieving such a goal involves research on two paths: a direct path via the solar thermal splitting of ZnO in the absence of fossil fuels, and an indirect path via the solar carbothermal/CH{sub 4}-thermal reduction of Zn O, with fossil fuels (coke or natural gas) as chemical reducing agents. Both paths make use of concentrated solar energy for high-temperature process heat. The direct path brings us to the complete substitution of fossil fuels with solar fuels for a sustainable energy supply system. The indirect path creates a link between today`s fossil-fuel-based technology and tomorrow`s solar chemical technology and builds bridges between present and future energy economies. (author) 1 fig., ...

1999-08-01

207

SnO{sub 2} thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity {psi}{sub AB}  

Energy Technology Data Exchange (ETDEWEB)

In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.

2010-02-04

208

SnO2 thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity ?AB  

International Nuclear Information System (INIS)

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

2010-02-04

209

Properties of ZnO thin films prepared by radio-frequency plasma beam assisted laser ablation  

International Nuclear Information System (INIS)

Zinc oxide thin films were obtained by laser ablation of a Zn target in oxygen reactive atmosphere, the oxygen being supplied either by a standard gas inlet valve or from a radio-frequency (rf) oxygen plasma. Pt-coated silicon and MgO were used as substrates. The influence of the deposition parameters as laser wavelength (266, 355, 1064 nm), laser fluence (1.5-20 J/cm2) and oxygen pressure (1-60 Pa) was studied. The influence of the rf plasma beam addition on the morphological proprieties of zinc oxide films was particularly investigated, simultaneously with several configurations of the direction of the ablation plasma, the rf plasma beam and the substrate. The obtained films, with thicknesses in the range of 50 nm to 1 ?m have been characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM).

2005-07-15

210

Influences of particle sizes and contents of chemical blowing agents on foaming wood plastic composites prepared from poly(vinyl chloride) and rice hull  

British Library Electronic Table of Contents (United Kingdom)

This research aims to investigate the effects of chemical blowing agent (CBA) contents and particle sizes on the properties of foamed poly(vinyl chloride) (PVC)/rice hull (RH) composites. Fine particles of azodicarbonamide (AC) at 5, 8, 11 and 22mm were modified with 20% by weight of ZnO and used at 0-3.0% by weight. The average cell size and density of the PVC/RH foamed profiles were reduced as the content of modified azodicarbonamide (mAC) increased. Larger mAC particles lowered the density more effectively. Maximum reduction of density by 46% was achieved when mAC 22mm was applied at 2.0% by weight. Larger blowing particles led to PVC/RH foam with greater flexural modulus and strength. Greater impact strength, observed when 5mm mAC was applied, resulted from the rather thick cell wall c...

2011-01-01

211

Evaluation of new corrosion-resistant superheater tubing in high-efficiency waste-to-energy plants  

Energy Technology Data Exchange (ETDEWEB)

Field corrosion tests were conducted on eight single tube materials and two welded overlay materials in three typical Japanese waste incineration plants in an effort to develop new corrosion-resistant superheater tubes capable of functioning efficiently under temperature and pressure conditions of 500 C and 100 kgf/cm{sup 2}-g in high-efficiency waste-to-energy (WTE) plants. Austenitic alloys containing higher concentrations of chromium, nickel, and molybdenum [Cr + Ni + Mo] showed excellent corrosion-resistant properties, and the new alloys JHN24 and HR30M showed good corrosion resistance. Different corrosion rates found in each of the three plants were explained by differences in operating conditions, such as gas temperature, concentration of molten salts resulting from chlorine (Cl) content of deposits, heavy metal (zinc oxide [ZnO] + lead oxide [PbO]) content, etc. It was confirmed that the corrosion rate of materials positioned in the first tube row facing the ...

1998-07-01

212

Quantum frustration in organic Mott insulators: from spin liquids to unconventional superconductors  

CERN Document Server

We review the interplay of frustration and strong electronic correlations in quasi-two-dimensional organic charge transfer salts, such as k-(BEDT-TTF)_2X and Et_nMe_{4-n}Pn[Pd(dmit)2]2. These two forces drive a range of exotic phases including spin liquids, valence bond crystals, pseudogapped metals, and unconventional superconductivity. Of particular interest is that in several materials there is a direct transition as a function of pressure from a spin liquid Mott insulating state to a superconducting state. Experiments on these materials raise a number of profound questions about the quantum behaviour of frustrated systems, particularly the intimate connection between spin liquids and superconductivity. Insights into these questions have come from a wide range of theoretical techniques including first principles electronic structure, quantum many-body theory and quantum field theory. In this review we introduce the basic ideas of the field by discussing a simple ...

2010-01-01

213

Motor Proteins Have Highly Correlated Brownian Engines  

CERN Document Server

Two headed motor proteins, such as kinesin and dynein, hidrolyze environmental ATP in order to propel unidirectionally along cytoskeletal filaments such as microtubules. In the case of kinesin, protein heads bind primarily on the alpha tubulin site of asymmetric alpha-beta 8nm-long tubulin dimers that constitute the microtubular protofilaments. Kinesin dimers overcome local binding forces up to 5pN and are known to move on protofilaments with ATP concentration-dependent speeds while hydrolizing on average one ATP molecule per 8nm step. The salient features of protein trajectories are the distinct abrupt usually 8nm-long steps from one tubulin dimer to the next interlaced with long quiescent binding periods at a tubulin site. Discrete walks of this type are characterized by substantially reduced variances compared to pure biased random walks, and as a result rule out flashing-type ratchet models as possible mechanisms for motor movement. On the other hand, simple ...

1998-01-01

214

Inclusive K{sup +}-meson production in proton-nucleus interactions  

Energy Technology Data Exchange (ETDEWEB)

The production of K{sup +}-mesons in pA(A=D,C,Cu,Ag,Au) collisions has been investigated at the COoler SYnchrotron COSY-Juelich for beam energies T{sub p}=1.0-2.3 GeV. Double differential inclusive pC cross-sections at forward angles {theta}{sub K+}<12 as well as the target mass dependence of the K{sup +} momentum spectra have been measured with the ANKE spectrometer. Far below the free NNthreshold at T{sub NN}=1.58 GeV the spectra reveal a high degree of collectivity in the target nucleus. From the target mass dependence of the cross-sections at higher energies, the repulsive in-medium potential of the K{sup +}-mesons can be deduced. Using pNcross-section parameterisations from the literature and our measured pD data we derive a cross-section ratio {sigma}(pn{yields}K{sup +}X)/{sigma}(pp{yields}K{sup +}X) {proportional_to}(3-4). (orig.)

2004-11-01

215

Determination of 40 synthetic food colors in drinks and candies by high-performance liquid chromatography using a short column with photodiode array detection  

British Library Electronic Table of Contents (United Kingdom)

Forty synthetic food colors were determined in drinks and candies by reversed-phase high-performance liquid chromatography with photodiode array detection. The following food colors were analyzed within 19min using a short analytical column (50mmx4.6mm i.d., 1.8mm) at 50degreeC with gradient elution: Ponceau 6R, Tartrazine, Fast yellow AB, Amaranth, Indigotine, Naphthol yellow S, Chrysoine, Ponceau 4R, Sunset yellow FCF, Red 10B, Orange G, Acid violet 7, Brilliant black PN, Allura red AC, Yellow 2G, Red 2G, Uranine, Fast red E, Green S, Ponceau 2R, Azorubine, Orange I, Quinoline yellow, Martius yellow, Ponceau SX, Ponceau 3R, Fast green FCF, Eosine, Brilliant blue FCF, Orange II, Orange RN, Acid blue 1, Erythrosine, Amido black 10B, Acid red 52, Patent blue V, Acid green 9, Phloxine B, Ben...

2008-01-01

216

Capacitive behaviour and electronic structure of passive films formed on nickel base alloy type Inconel 600; influence of Cr and Fe. Comportement capacitif et structure electronique des films passifs formes sur l'alliage a base de nickel du type Inconel 600 (75Ni-16Cr-8Fe); influence du chrome et du fer  

Energy Technology Data Exchange (ETDEWEB)

The study of passive films formed on a nickel base alloy type Inconel 600 is performed by capacitance measurements (Mott-Schottky approach). This research is supported by the passivation study of the alloying elements Ni, Cr, Fe and high purity alloys Ni-Cr, Ni-Fe, Ni-Cr-Fe. The results obtained show that the capacitive behaviour of the Inconel 600 in the passive state is similar to that on a p-n heterojunction to which a barrier zone of nickel oxide is added. The individual or combined action of alloying elements on the development of this kind of electronic structure is discussed. (authors). 5 refs., 6 figs.

1994-08-01

217

Heterodifunctional ligands derived from monooxidized Bis(phosphino)amines. Synthesis and transition metal (Molybdenum(0), Tungsten(0), Rhodium(I), Palladium(II), and Platinum(II)) complexes of (Diphenylphosphino)(diphenylphosphinothioyl)- and (Diphenylphosphino) (diphenylphosphinoselenoyl)phenylamine, Ph[sub 2]PN(Ph)P(E)PH[sub 2] (E = S, Se). Crystal and molecular structure of the Pt(II) Complex [Cl[sub 2]P[ovr tPPh[sub 2]N(Ph)P(S)]Ph[sub 2  

Energy Technology Data Exchange (ETDEWEB)

Bis(diphenylphosphino)phenylamine can be selectivity oxidized by S or Se in toluene or hexane solvents to the monooxidized thioyl or selenoyl products Ph[sub 2]PN(PH)PPh[sub 2]=E, (E = S, Se). These compounds act as bidentate chelate ligands toward metal complexes forming (CO)[sub 4]M(LL) (M = Mo, W), CO(Cl)Rh(LL), and Cl[sub 2]M(LL), (M = Pt, Pd) where (LL) is the thioyl or selenoyl derivative of the aminobis(phosphine). IR and NMR data are given for all complexes. The carbonyl infrared stretching frequencies show that the chelates form with the phosphine cis to any CO which is present. The [sup 31]P NMR of all complexes of two doublets except for the Rh complexes wherein the Rh spin also couples to phosphorous to produce two doublets of doublets. The [sup 2]J[sub PP] values range from 56 to 112 Hz. [sup 1]J[sub PSe] coupling provide valuable assistance for the assignment of the phosphorus resonances which range widely from 55 to 126 ppm for P[sup III] and from 60 ...

1993-12-08

218

Useful vacancies: Positron beam interrogation of fluorine-vacancy complexes in semiconductor device structures  

Energy Technology Data Exchange (ETDEWEB)

The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.

2008-10-31

219

Thermal-mechanical behavior of the bonding wire for a power module subjected to the power cycling test  

British Library Electronic Table of Contents (United Kingdom)

Two analytical methods were proposed in this research, coupled electro-thermal finite element (FE) analysis and thermal-mechanical FE analysis, to analyze the mechanical behavior of bonding wire of power module under cyclic power loads, and the International Electrotechnical Commission standard is adopted in conducting a power cycling test. The exterior temperature distribution was measured by an infrared thermometer. Moreover, the junction temperature is calculated from the given thermal impedance of the semiconductor chip, chip power loss, and case temperature. Subsequently, the simulated temperature distribution via electro-thermal FE analysis is compared with experimental results to validate the methodology used in the aforementioned analysis. The analysis shows compressive stress at t...

2011-01-01

220

Targeted integration of baboon endogenous virus in the BEVI locus on human chromosome 6.  

Science.gov (United States)

The infection of cultured human cells with baboon endogenous virus (BEV) frequently leads to an association of viral DNA with a specific genetic locus (termed BEVI, for baboon endogenous virus infection) on chromosome 6. Restriction endonuclease digestion of DNA from BEV-infected human cells and their derived somatic cell clones frequently revealed a common cellular DNA sequence in the proximity of one of the junctions between cellular DNA and the integrated virus. We propose that a short cellular DNA sequence, repeated on chromosome 6 and separated by unique DNA sequences, presents a high-affinity target for the integration of BEV in human cells. PMID:6401843

1983-01-13

221

Synthesis and physical properties of superconducting compound films formed by the electron-beam codeposition of the elements  

International Nuclear Information System (INIS)

Electron-beam codeposition of the elements to form certain high critical temperature superconducting materials, in particular A-15 compounds, has proven to be very useful in research directed at understanding and improving their superconducting properties. This work has used the close control of three or more evaporant sources to reproducibly make specimens that permit studies across selected regions of composition and phase space. The effect of composition and phase, together with the temperature and rate of deposition, on the growth morphology and superconducting properties has been studied. The superconducting properties measured include the critical temperature, ac loss, critical current density, and tunnel junction characteristics. The particular compounds studied include Nb_3Sn, Nb_3Ge, and V_3Si.

222

Status of nonsilicon photovoltaic solar cell research  

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

1980-01-01

223

Schottky barrier modulation on silicon nanowires  

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

2007-03-26

224

Reconnaissance radiological characterization for the White Point Nike Missile Site, San Pedro, California  

International Nuclear Information System (INIS)

This report is the result of field work performed at the former White Point Nike Missile Site, San Pedro, California. The Hazardous Waste Remedial Actions Program tasked the Oak Ridge National Laboratory Pollutant Assessments Group in Grand Junction, Colo., with this project. The objective was to determine whether or not radioisotopes possibly associated with past Department of Defense (DOD) operations were present and within accepted background levels. The radiation survey was accomplished by performing three independent radiation surveys, both outdoors and indoors, and random soil sampling. Initially, the site was land surveyed to develop a grid block system. A background radiation investigation was performed out in the San Pedro area.

225

Pipework design and operation  

Energy Technology Data Exchange (ETDEWEB)

This book presents the proceedings of a conference dedicated to the design and operation of pipework in all its aspects, involving both metallic and non-metallic materials. Topics considered include a study of single mitre pipe bends using the finite element method; tests to failure of GRP pipe bends under in-plane flexural loading; finite element stress analysis of an equal diameter branch pipe intersection subjected to internal pressure and in-plane moment loadings; finite element stress analysis of extruded outlet tee junctions; design of pipework on the British PWR; a review of advanced remanent life methods for pipes operating in the creep range; pipe whip analysis and design; damping values for piping systems; pipework snubbers based on electro-rheological fluids; and the seismic design of piping systems in the flexible range.

1985-01-01

226

Optimized pre-amorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on insulator  

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

2008-12-01

227

Optimal Dynamical Range of Excitable Networks at Criticality  

CERN Document Server

A recurrent idea in the study of complex systems is that optimal information processing is to be found near bifurcation points or phase transitions. However, this heuristic hypothesis has few (if any) concrete realizations where a standard and biologically relevant quantity is optimized at criticality. Here we give a clear example of such a phenomenon: a network of excitable elements has its sensitivity and dynamic range maximized at the critical point of a non-equilibrium phase transition. Our results are compatible with the essential role of gap junctions in olfactory glomeruli and retinal ganglionar cell output. Synchronization and global oscillations also appear in the network dynamics. We propose that the main functional role of electrical coupling is to provide an enhancement of dynamic range, therefore allowing the coding of information spanning several orders of magnitude. The mechanism could provide a microscopic neural basis for psychophysical laws.

2006-01-01

228

Oligoaryl Cruciform Structures as Model Compounds for Coordination-Induced Single-Molecule Switches (Eur. J. Org. Chem. 5/2010)  

British Library Electronic Table of Contents (United Kingdom)

The cover picture shows the fertile combination of synthetic chemistry and experimental physics, both permanently making central contributions to hot scientific topics in spite of being classical scientific disciplines with long-standing traditions. The displayed scientist struggles with the synthesis of cruciform structures (displayed on the black board) for single-molecule-transport investigations in a mechanically controlled break junction setup (sketched in the inset at the upper right corner). More information on the design and synthesis of the cruciform structures, such as their immobilization experiments, is found in the article by M. Calame, M. Mayor et al. on p. 833 ff. Serafin Pazdera is greatly acknowledged for the cover artwork.

2010-01-01

229

Observation of 77 K staircase I-V characteristics in 2DEG's irradiated by a focused ion beam  

International Nuclear Information System (INIS)

Staircase current-voltage (I-V) characteristics, observed at 77 K in narrow 2DEG channels irradiated by a single line scan of a focused ion beam (FIB), is reported in detail. These staircases are interpreted as evidence of single electron tunneling through a naturally occurring specific Coulomb island in the random potential fluctuations created by FIB damage. Clear comparison is made between the I-V's taken from wide channels and those from narrow channels. Based on orthodox calculations of the I-V characteristics, it is shown that highly asymmetric tunnel junctions are needed to explain our data. This is consistent with the random nature of the potential landscape in the FIB damaged region. (author).

230

Metallization of large silicon wafers. Quarterly technical report No. 1, August 26--December 31, 1977. [45 references  

Science.gov (United States)

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

1977-01-01

231

Long-term survival following radical surgery after chemotherapy for esophagogastric adenocarcinoma with extensive lymph node metastases: Report of a case  

British Library Electronic Table of Contents (United Kingdom)

A 46-year-old man was referred to us after he presented to his local physician complaining of difficulty eating. Upper gastrointestinal endoscopy revealed a tumor at the esophagogastric junction (EGJ), and moderately differentiated adenocarcinoma was diagnosed from the biopsy findings. Computed tomography (CT) showed apparent enlargement of the pretracheal lymph nodes, the lymph nodes around the bilateral recurrent laryngeal nerves, and the lower thoracic paraesophageal lymph nodes, confirming metastasis. Since the disease was far advanced esophagogastric cancer with marked lymph node metastases throughout the mediastinum, curative resection would have been unlikely. Thus, he was commenced on systemic chemotherapy with cisplatin (90 mg/body, day 8) + S-1 (120 mg/body/day, given for 3 weeks...

2011-01-01

232

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF_2"+ ion implantation into silicon  

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

2002-01-01

233

Improving functional esophageal surgery with a ?smart? bougie: endoflip  

British Library Electronic Table of Contents (United Kingdom)

Background An emerging imaging tool, the functional lumen imaging probe (Endoflip; Crospon Ltd, Galway, Ireland), provides a real-time measurement of esophagogastric junction (EGJ) capacity and diameter, which would be of particular interest in functional esophageal surgery such as Heller myotomy and antireflux procedures. This study aimed to demonstrate the intraoperative use of endoflip in the treatment of achalasia and gastroesophageal reflux disease (GERD). Methods In the first case, Heller myotomy was performed under endopflip guidance, for persistent dysphagia after failed endoscopic dilatation. In the second case, the endoflip was used to calibrate a Nissen fundoplication. With the patient under general anesthesia, the endoflip catheter was inserted orally and positioned to straddle...

2011-01-01

234

Improvement in the spectral response at long wavelength of a-SiGe:H solar cells by exponential band gap design of the i-layer  

Energy Technology Data Exchange (ETDEWEB)

A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. In this paper we compare its optical and electrical characteristics with the two more common profiles: the U- and V-shapes. As predicted by the simulations, the new profile combines the advantages of both profiles. Like the V-shape, the exponential shape reduces the amount of Ge in the i-layer, decreasing both the space charge defect density inside the i-layer and the recombination losses. It also improves the electric field. At the same time, the exponential shape generates the same current density as the U-shape.

2002-04-01

235

High-performance concentrator tandem solar cells based on IR-sensitive bottom cells  

Energy Technology Data Exchange (ETDEWEB)

Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).

1991-05-01

236

High energy heavy ion irradiation in semiconductors  

Energy Technology Data Exchange (ETDEWEB)

Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy ({approx}100 MeV) heavy ions of Au{sup 7+} (gold) and Si{sup 7+} (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of {approx}10{sup 12}-10{sup 13} ions/cm{sup 2}. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.

1999-07-02

237

High concentration low wattage solar arrays and their applications  

Energy Technology Data Exchange (ETDEWEB)

Midway Labs currently produces a 335x concentrator module that has reached as high as 19{percent} active area efficiency in production. The current production module uses the single crystal silicon back contact SunPower cell. The National Renewable Energy Lab has developed a multi junction cell using GalnP/GaAs technologies. The high efficiency ({gt}30{percent}) and high cell voltage offer an opportunity for Midway Labs to develop a tracking concentrator module that will provide 24 volts in the 140 to 160 watt range. This voltage and wattage range is applicable to a range of small scale water pumping applications that make up the bulk of water pumping solar panel sales. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

238

Ge/Si nanowire mesoscopic Josephson junctions  

CERN Document Server

The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in semiconductor-superconductor hybrid ...

2006-01-01

239

Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report  

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

240

Evaluation of a commercial MRSA assay when multiple MRSA strains are causing epidemics  

British Library Electronic Table of Contents (United Kingdom)

Rapid and reliable diagnostic methods are needed to control methicillin-resistant Staphylococcus aureus (MRSA) transmission. We studied the BD GeneOhm? MRSA Assay which is based on one specific amplification product at the junction of the right extremity sequence of the staphylococcal cassette chromosome mec (SCCmec) and the chromosomal sequence of orfX of S. aureus. The test was applied on 95 clinical isolates in Finland: 83% were positive. The isolates giving negative results represented several pulsed-field gel electrophoresis (PFGE) types and harboured SCCmec types IV, V, VI or were new types with different combinations of ccr genes.

2009-01-01

241

Effects of intradot electron-electron interaction on the photon-assisted Andreev tunneling through a finite-sized carbon-nanotube system  

International Nuclear Information System (INIS)

The effects of intradot electron-electron interaction on the photon-assisted Andreev tunneling of a superconductor/carbon-nanotube/superconductor system are studied by using nonequilibrium Green's function technique. The inverse supercurrent reflecting the #pi#-junction transition emerges in the spin-split energy-levels regime polarized by the Coulomb interaction. For the positive tunneling case, the supercurrent reaches its maximum when the spin-degenerate energy-levels are nearest to the Fermi surface. Conversely, for the negative tunneling case, the supercurrent reaches its maximum when two split energy-levels are symmetric with respect of the Fermi surface. The sign and the amplitude of the Andreev tunneling depend distinctly on the energy-level spacing tuned by photon-assisted tunneling. In order to fully understand the transport characteristics, the current-carrying density of states are investigated, which clearly shows the enhancement, suppression or even ...

2007-01-01

242

Design and fabrication of large ultra-thin PIN detector with membrane stress deviation  

Energy Technology Data Exchange (ETDEWEB)

In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.

2010-09-15

243

Comparison between two different designs in the AC voltage measurement  

British Library Electronic Table of Contents (United Kingdom)

In this paper, a comparison is done between two different techniques in measuring the AC voltage. The first technique is the single junction thermal voltage converters (SJTVC) which consist of one thermal element (TE) which its output e.m.f. in the range of 7-12mV and the other is the new designed thermal voltage converters which consist of a number of TEs connected in parallel, series and series/parallel to increase their output e.m.f. (becomes in the range of 35-51mV). The effect of increasing the output e.m.f. is studied in this paper through evaluating the uncertainty budget and proved that its increase has a great effect on the accuracy and the uncertainty of the AC voltage measurement.

2011-01-01

244

Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation  

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

2005-08-01

245

Ceramic linings beat coal plant's abrasion/corrosion problems  

Energy Technology Data Exchange (ETDEWEB)

A combination of erosion and corrosion at the Victoria Junction coal preparation plant in Sydney, Nova Scotia was causing serious problems. Schedule 80 mild steel pipes were starting to fail as well as some quarter-inch steel plates in the lauders and chutes. Some corrosion tests were carried out and the high chloride level in the process water was felt to be the single most important contribution to the corrosion problem. Cast basalt was selected as a solution to the pipe wear problem. Three different types of abrasion/corrosion-resistant tiling - basalt tiles, kalceram tiles and ceramic tiles were well suited to the chloride conditions at this plant.

1985-07-01

246

Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions  

Energy Technology Data Exchange (ETDEWEB)

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

1997-12-01

247

Asphalt emulsion sealing of uranium mill tailings. 1980 annual report  

International Nuclear Information System (INIS)

Studies of asphalt emulsion sealants conducted by the Pacific Northwest Laboratory have demonstrated that the sealants are effective in containing radon and other potentially hazardous material within uranium tailings. The laboratory and field studies have further demonstrated that radon exhalation from uranium tailings piles can be reduced by greater than 99% to near background levels. Field tests at the tailings pile in Grand Junction, Colorado, confirmed that an 8-cm admix seal containing 22 wt% asphalt could be effectively applied with a cold-mix paver. Other techniques were successfully tested, including a soil stabilizer and a hot, rubberized asphalt seal that was applied with a distributor truck. After the seals were applied and compacted, overburden was applied over the seal to protect the seal from ultraviolet degradation.

248

Application of asphalt emulsion seals to uranium mill tailings  

International Nuclear Information System (INIS)

Studies of asphalt emulsion sealants have demonstrated that the sealants are effective in containing radon and other potentially hazardous material within uranium tailings. The laboratory and field studies have further demonstrated that radon exhalation from uranium tailings piles can be reduced by greater than 99% to less than background levels. Field tests at the tailings pile in Grand Junction, Colorado confirmed that an 8-cm admix seal containing 22 wt % asphalt could be effectively applied with a cold-mix paver. Other techniques were successfully tested, including a soil stabilizer and a hot, rubberized asphalt seal that was applied with a distributor truck. After the seals were applied and conpacted, overburden was applied over the seal to protect the seal from ultraviolet degradation. 14 figures.

249

Year-long comparison of two techniques to monitor outdoor radon concentrations at Shiprock, New Mexico  

Energy Technology Data Exchange (ETDEWEB)

The US Department of Energy (DOE) Office of Remedial Action and Waste Technology established the Technical Measurements Center (TMC) at the DOE Grand Junction Projects Office (GJPO) in Grand Junction, Colorado, to standardize, calibrate, and compare measurements made in support of DOE remedial action programs. Outdoor radon concentration measurements were made by the TMC in Shiprock, New Mexico, to compare two different methods of measuring radon in an attempt to determine the feasibility of using passive alpha-track detectors to assess the adequacy of remedial action undertaken at the Shiprock uranium mill tailings pile. The results of the first three quarters of monitoring have been detailed in previous reports. An analysis of the data from the fourth quarter of monitoring at Shiprock reveals a somewhat poorer correlation between the two sets of measurements than was seen in the third quarter of this study, but a better correlation than was ...

1988-08-01

250

The helical tomotherapy thread effect  

International Nuclear Information System (INIS)

Inherent to helical tomotherapy is a dose variation pattern that manifests as a 'ripple' (peak-to-trough relative to the average). This ripple is the result of helical beam junctioning, completely unique to helical tomotherapy. Pitch is defined as in helical CT, the couch travel distance for a complete gantry rotation relative to the axial beam width at the axis of rotation. Without scattering or beam divergence, an analytical posing of the problem as a simple integral predicts minima near a pitch of 1/n where n is an integer. A convolution-superposition dose calculator (TomoTherapy, Inc.) included all the physics needed to explore the ripple magnitude versus pitch and beam width. The results of the dose calculator and some benchmark measurements demonstrate that the ripple has sharp minima near p=0.86(1/n). The 0.86 factor is empirical and caused by a beam junctioning of the off-axis dose profiles which differ from the axial profiles as well ...

2005-05-01

251

New materials for future generations of III-V solar cells  

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a depletion-width-enhanced ...

1999-03-01

252

Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell  

Energy Technology Data Exchange (ETDEWEB)

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, ...

1992-12-01

253

Evaluation of new corrosion resistant superheater tubings in high efficiency waste-to-energy plants  

Energy Technology Data Exchange (ETDEWEB)

In order to develop new corrosion resistant superheater tubes capable of functioning efficiency under temperature and pressure conditions of 500 C and 100 ata used in high efficient waste-to-energy (WTE) plants, field corrosion tests were conducted on eight single tube materials and two welded overlay materials at metal temperatures of 450 C and 550 C for 700 and 3,000 hours, respectively, in three typical japanese waste incineration plants. The test results indicate that austenitic alloys containing higher concentrations of [Cr + Ni + Mo] show excellent corrosion resistant properties and new alloys of JHN24 and HR30M have good corrosion resistance. The different corrosion rate found for each of the three plants could be explained by differences in the severity of corrosion factors, such as, gas temperature, concentration of molten salts due to Cl content of deposits, and heavy metal [ZnO + PbO] content etc. It was also confirmed that the corrosion rate of ...

1997-08-01

254

Separation of "2"0"3Pb from Tl_2O_3 target material using a hydrous zirconium oxide column with application to "2"0"1Tl preparation  

International Nuclear Information System (INIS)

Lead 203 has been used as a tracer for lead in the field of nuclear medicine for several years. It is produced in a cyclotron usually by proton or deuteron bombardment of a thallium target principally by the p,n or d,2n reaction on "2"0"3Tl or the p,3n or d,4n reaction on "2"0"5Tl. Several different methods have been reported for the separation of "2"0"3Pb from the thallium target. These generally involve a combination of precipitation and solvent extraction techniques. A new method has been developed for the separation of Pb from Tl using ion exchange chromatography over hydrous zirconium oxide (HZO). Lead is taken up by this inorganic ion exchanger at pH > 3 whereas Tl(I) is not. Lead can subsequently be eluted with acid of pH 1-1.5. The recovery of "2"0"3Pb has been approximately 75% and the Tl impurity level has not been in excess of 10 ppm. Reference is made to the application of this separation method to the preparation of "2"0"1Tl from the reaction ...

255

Pre-operational monitoring plan for LIL waste disposal at Saligny  

International Nuclear Information System (INIS)

Developed under the PN II Project 71-009 - MONA, the pre-operational monitoring program of the LIL waste disposal site presented in this paper covers the main elements requested for a continuous improvement of site characterization and safety assessment, as well as for the set up of the baseline data requested for the future operational and post-operational monitoring and surveillance. These elements are: vadose and saturated zones hydrogeology, surface erosion, meteorology and radionuclides content in waters, soil and biota. Pairs of TDR (Time Domain Reflectometry) and pressure sensors, coupled with a meteorological station have been installed on site for the continuously measurement of the water content and matric potential changes due to the climate variations. The data will be used to follow the water balance, the pores water velocity and to calculate the infiltration rate. A new set of erosion rates experimentally determined by Pinhole test on surface soil ...

2009-10-12

256

Neutron induced reaction cross-sections of iron in the energy range 1 to 20 MeV: A work programme  

International Nuclear Information System (INIS)

Iron is one of the main constituents of stainless steel which is used as a structural material in nuclear reactors. In fast and conceptual fusion and fusion-fission hybrid systems the primary energy range of neutron interaction lies between 1 and 20 MeV which opens up several reaction channels. The reaction cross-sections in this energy range are important for dosimetry, radiation damage, neutronics and safety studies of nuclear reactors. Keeping this in view Nuclear Data Section of the International Atomic Energy Agency has sponsored a Research Co-ordination Programme on Methods for the Calculation of Fast Neutron Nuclear Data for Structural Elements. Under this programme we propose to study (n,n'), (n,2n), (n,3n), (n,p), (n,np), (n,pn), (n,#alpha#), (n,n#alpha#), (n,#alpha#n) and (n,#gamma#) reaction cross-sections. Besides these, total, elastic and discrete level inelastic scattering cross-sections, angular distributions of neutron production cross-sections, ...

1988-01-01

257

Influence of plasma nitriding on fatigue strength and fracture of a B-Mn steel  

Energy Technology Data Exchange (ETDEWEB)

The first part of a systematic investigation is presented of surface treatments affecting the fatigue behavior of smooth and notched quenched and tempered (Q and T) specimens made of a B-Mn SS2131 ({approx}AISI 15B21H) steel. In this part, the effects of plasma nitriding (nitriding temperature=480 C, time=24 h) on the fatigue strength and notch sensitivity were investigated. Constant stress amplitude plane reversed bending fatigue tests (R=-1) at 47 Hz were conducted using cylindrical plasma nitriding (PN) and Q and T steel specimens with K{sub t}=1.05 and 1.7. The compound layer was found to consists of {epsilon}-phase and {gamma}`-phase. S-N curves show that plasma nitriding improves the fatigue limit by 53 and 115% of Q and T smooth and notched specimens, respectively. The fatigue strength of smooth specimens is improved through the whole fatigue life but only for long fatigue lives for notched specimens. Plasma nitriding reverses the low notch sensitivity (at ...

1998-02-01

258

HALO - the helium and lead observatory for supernova neutrinos  

Energy Technology Data Exchange (ETDEWEB)

The Helium and Lead Observatory (HALO) is a supernova neutrino detector under development for construction at SNOLAB. It is intended to fulfill a niche as a long term, low cost, high livetime, and low maintenance, dedicated supernova detector. It will be constructed from 80 tonnes of lead, from the decommissioning of the Deep River Cosmic Ray Station, and instrumented with approximately 384 meters of {sup 3}He neutron detectors from the final phase of the SNO experiment. Charged- and Neutral-Current neutrino interactions in lead expel neutrons from the lead nuclei making a burst of detected neutrons the signature for the detection of a supernova. Existing neutrino detectors are mostly of the water Cerenkov and liquid scintillator types, which are primarily sensitive to electron anti-neutrinos via charged-current interactions on the hydrogen nuclei in these materials. By contrast, the large neutron excess of a heavy nucleus like Pb acts to Pauli-block p)n ...

2008-11-01

259

First-principles nonlocal-pseudopotential approach in the density-functional formalism. II. Application to electronic and structural properties of solids  

International Nuclear Information System (INIS)

We apply our previously developed first-principles nonlocal pseudopotentials (obtained for all atoms of rows 1--5 in the Periodic Table) to study self-consistently the electronic structure of Si and Ge and the transition metals Mo and W. For Si and Ge we find that the first-principles pseudopotentials yield valence-band states in good agreement with the empirically adjusted pseudopotential and photoemission data, whereas the low conduction-band states appear to be consistently lower in energy due apparently to incomplete cancellation of the self-interaction effects. The calculated x-ray scattering factors (obtained by core orthogonalization of the pseudo-wave-functions) are in excellent agreement with experiment. The self-consistent valence charge density shows a distinct elongation of the covalent bond along the internuclear axis, in good agreement with the experimentally synthesized density. The systematic deviations of the empirical pseudopotential results from the present are ...

260

Beta-delayed proton emission: a new series of precursors, and the measurement of 10"-"1"6 s nuclear lifetimes  

International Nuclear Information System (INIS)

The results of investigation into a new series of Z-even nuclei - precursors of delayed protons (PDP) -"6"5Ge, "8"9Se, "9"3Kr, "8"1Zr, and "8"5Mo are presented. PDP were obtained by irradiation of targets in the following reactions: Zn(He, 2n) "6"5Ge, 22 MeV; "4"0Ca("3"2S, 2 pn) "1"9Se, 100 MeV; "6"0Ni ("1"60, 3 n), "7"3Kr, 75 MeV; "5"2Cr ("3"2S, 3n)"8"1Zr, 110 MeV; "5"6Fe("3"2S, 3n)"8"5Mo, 120 MeV. The targets (self-sustaining foils of thickness approximately 1.2 mg/cm"2) were placed at an angle of 15 deg to the direction of the ion beam. Upon irradiation targets were moved downwards into a measuring position. The spectra of protons, X and gamma-rays, and also the spectra of p - x, p-#gamma#, x - #gamma# coincidences accompanying the decay of "6"5Ge, "6"9Se,"7"3Kr and "8"1Zr, and "8"5Mo were measured. The measured half-lives are equal, to 31.5+-1.9, 27.3+-0.5, 28.5+-1.1, 6.3+-0.5, and 5.6 +-0.9 s respectively. The experimental spectra are compared with the ...

261

Wide bandgap collector III-V double heterojunction bipolar transistors  

International Nuclear Information System (INIS)

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ...

262

Understanding and controlling transient enhanced dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials ...

1995-12-31

263

Understanding and controlling transient enhanced dopant diffusion in silicon  

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials ...

264

Transient analysis of blowdown thrust force under PWR LOCA conditions  

Energy Technology Data Exchange (ETDEWEB)

The analytical results of blowdown characteristics and its thrust force were compared with the experiment, which were performed as pipe whip tests under the PWR LOCA conditions on the hypothetical accident of guillotine break of pipes. The blowdown thrust force was obtained by the integral momentum equation about single-phase flow, homogeneous and separated two-phase flow, assuming critical pressure at the exit if critical flow condition was satisfied. The following results are obtained: (1) The node-junction method is useful for the analysis of water hammer phenomena and of the blowdown thrust force. (2) The Henry-Fauske model for subcooled critical flow is effective for the analysis of the maximum thrust force under the PWR LOCA conditions. The jet thrust parameter of analysis and experiment is 1.08. (3) The thrust parameter of saturated blowdown has the same one with the value under pressurized condition when the stagnant pressure is chosen as the saturated one. ...

1982-09-01

265

Transient analysis of blowdown thrust force under PWR LOCA  

Energy Technology Data Exchange (ETDEWEB)

The analytical results of blowdown characteristics and thrust forces were compared with the experiments, which were performed as pipe whip and jet discharge tests under the PWR LOCA conditions. The blowdown thrust forces were obtained by Navier-Stokes momentum equation for a single-phase, homogeneous and separated two-phase flow, assuming critical pressure at the exit if a critical flow condition was satisfied. The following results are obtained: (1) The node-junction method is useful for both the analyses of the blowdown thrust force and of the water hammer phenomena. (2) The Henry-Fauske model for subcooled critical flow is effective for the analysis of the maximum thrust force under the PWR LOCA conditions. The jet thrust parameter of the analysis and experiment is equal to 1.08. (3) The thrust parameter of saturated blowdown has the same one with the value under pressurized condition when the stagnant pressure is chosen as the saturated one. (4) The dominant ...

1983-04-01

266

Subcellular distribution of ryanodine receptors in the cardiac muscle of carp (Cyprinus carpio).  

Science.gov (United States)

We examined the subcellular localization of ryanodine receptors (RyR) in the cardiac muscle of carp using biochemical, immunohistochemical, and electron microscopic methods and compared it with those of rats and guinea pigs. To achieve this goal, an anti-RyR antibody was newly raised against a synthetic peptide corresponding to an amino acid sequence that was conserved among all sequenced RyRs. Western blot analysis using this antibody detected a single RyR band following the SDS-PAGE of sarcoplasmic reticulum (SR) membranes from carp atrium and ventricle as well as from mammalian hearts and skeletal muscles. The carp heart band had slightly greater mobility than those of mammalian hearts. Although immunohistochemical staining showed evident striations corresponding to the Z lines in longitudinal sections of mammalian hearts, clusters of punctate staining, in contrast, were distributed ubiquitously throughout carp atrium and ventricle. Electron microscopic images of the carp myocardium ...

2003-06-12

267

Silicon front-end technology -- Materials processing and modeling. Materials Research Society symposium proceedings Volume 532  

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and transient enhanced ...

1998-07-01

268

Possible two-gap superconductivity in NdFeAsO{sub 0.9}F{sub 0.1} probed by point-contact Andreev-reflection spectroscopy  

Energy Technology Data Exchange (ETDEWEB)

Systematic studies of the NdFeAsOF superconducting energy gap using point-contact Andreev-reflection (PCAR) spectroscopy are presented. At low temperatures the PCAR conductance spectra show a pair of gap-like peaks at about {+-} (4-7) mV and in most cases also a pair of humps at around {+-} 10 mV. Fits to the s-wave two-gap model of the PCAR conductance allowed to determine two superconducting energy gaps in the system. However, the energy-gap features disappear at T* = 15-20 K, much below the particular T{sub c} of the junction under study. At T* a zero-bias conductance (ZBC) peak emerges, which at higher temperatures usually overwhelms the spectrum with an intensity significantly higher than the conductance signal at lower temperatures. Possible causes of this unexpected temperature effect are discussed. In some cases the conductance spectra show just a reduced conductance around the zero-bias voltage, the effect persisting well above the bulk transition ...

2009-01-15

269

Molecular resemblance of an AIDS-associated lymphoma and endemic Burkitt lymphomas: Implications for their pathogenesis  

International Nuclear Information System (INIS)

Non-Hodgkin lymphoma is a common feature of AIDS. Approximately 30-40% of these tumors exhibit clinical features suggestive of endemic Burkitt lymphoma: they are aggressive malignancies that occur in association with Epstein-Barr virus infection, they arise in the setting of immunosuppression, and they carry t(8;14) translocations without detectable rearrangement of the MYC oncogene. To understand the molecular basis of these parallels, the authors analyzed a case of Epstein-Barr-positive AIDS-associated undifferentiated lymphoma. Southern blots show that the tumor exhibits immunoglobulin joining segment rearrangement but no rearrangement of the MYC oncogene. Cloning of the rearranged joining segment allowed the isolation of recombinant clones encompassing the translocation breakpoint, and sequencing of the translocation junction disclosed that the breakpoint is situated 7 base pairs from the chromosome 14 site involved in a previously described endemic Burkitt ...

270

Low energy boron implantation in silicon: (1) reduction of channeling tail by careful alignments. (2) Transient diffusion during rapid thermal annealing  

Energy Technology Data Exchange (ETDEWEB)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for ...

1985-01-01

271

Low energy boron implantation in silicon: (1) reduction of channeling tail by careful alignments. (2) Transient diffusion during rapid thermal annealing  

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for the boron ...

272

Irradiating the groin nodes without breaking a leg: A comparison of techniques for groin node irradiation  

International Nuclear Information System (INIS)

The purpose of this study was to determine the optimal technique for delivering postoperative radiotherapy for vulvar cancer and other tumors requiring treatment of the inguinal nodes. This project compared tumor coverage and normal tissue sparing for the 5 main radiotherapy techniques that are used to treat vulvar cancer. The intensity-modulated radiation therapy (IMRT) plan was undesirable because it resulted in an excessive dose to portions of the central pelvic structures. The photon thunderbird with skin match was unacceptable because it underdosed a portion of the groin region. The electron thunderbird was ideal for thin patients but was not applicable for most patients because of excessive dose to the skin and subcutaneous tissues. The photon through-and-through and the photon thunderbird with deep match were acceptable in most situations. In thin patients, where the depth of the inguinal vessels is less than 3 cm, the electron thunderbird is the technique of choice. In the ...

273

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF{sub 2}{sup +} ion implantation into silicon  

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

2002-01-01

274

Hydrogeologic investigation of the Advanced Coal Liquefaction Research and Development Facility, Wilsonville, Alabama  

Energy Technology Data Exchange (ETDEWEB)

This document describes the geology and hydrogeology at the former Advanced Coal Liquefaction Research and Development (ACLR&D) facility in Wilsonville, Alabama. The work was conducted by personnel from the Oak Ridge National Laboratory Grand Junction office (ORNL/GJ) for the U.S. Department of Energy (DOE) Pittsburgh Energy Technology Center (PETC). Characterization information was requested by PETC to provide baseline environmental information for use in evaluating needs and in subsequent decision-making for further actions associated with the closeout of facility operations. The hydrogeologic conceptual model presented in this report provides significant insight regarding the potential for contaminant migration from the ACLR&D facility and may be useful during other characterization work in the region. The ACLR&D facility is no longer operational and has been dismantled. The site was characterized in three phases: the first two phases were an ...

1996-09-01

275

High-efficiency GaAs solar cells on mm and sub-mm grain-size polycrystalline Ge substrates  

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on sub-mm grain-size poly-Ge. We have also ...

1997-02-01

276

GaP/Al/sub x/Ga/sub 1-x/P heterojunction bipolar junction transistor for high-temperature electronic applications  

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

1982-01-01

277

FIB implantation induced site-selectively grown self-assembled InAs QDs in a light emitting #mu#-diode  

International Nuclear Information System (INIS)

We present an approach for fabrication of intentionally positioned epitaxial InAs QDs in a micron sized light emitting diode. For site-selective growth, a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation technology in an all-ultra-high-vacuum (UHV) setup has been employed. Single dot occupancy of almost 55 % on FIB patterned nano-depressions was successfully achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding these QDs in the intrinsic part of a GaAs-based micron sized p-i-n junction device. Few or single dot are expected to be electrically addressed in these devices. We report results from electroluminescence (EL) measurement which proves the single dot characteristics of our device. The EL spectra consist of sharp emission lines and their dependence on injection current shows linear behavior for exciton and quadratic ...

2010-03-21

278

Experiments on liquid immersion natural convection cooling of leadless chip carriers mounted on ceramic substrate  

Science.gov (United States)

An experimental investigation of natural convection heat transfer from a commercially available semiconductor device package is presented. The package was centrally mounted on a ceramic substrate. The package-substrate assembly formed one surface of a dielectric-filled cubical enclosure of aspect ratio one. The top surface of the enclosure was maintained at prescribed temperature. Surface temperature measurements were made at various locations on the substrate, the package lid, as well as the chip center. These measurements are reported for three dielectric fluids and three enclosures top surface temperatures, both with the substrate oriented horizontally as well as vertically. The results indicate that the maximum input power without exceeding a chip junction temperature of 80 C is 2.58 watts with FC-75 as the cooling fluid and the upper boundary maintained at 15 C. This is significantly larger than the maximum of 1.21 watts allowable with the natural convection ...

1989-09-01

279

Effects of the. cap alpha. -adrenoceptor antagonists phentolamine, phenoxybenzamine, and Idazoxan on sympathetic blood flow control in the periodontal ligament of the cat  

Energy Technology Data Exchange (ETDEWEB)

Blood flow changes in the periodontal ligament (PDL) were measured indirectly by monitoring the local clearance of /sup 125/I/sup -/ during electric sympathetic nerve stimulation or close intra-arterial infusions of either noradrenaline (NA) or adrenaline (ADR) before and after administration of phentolamine (PA), phenoxybenzamine (PBZ) or Idazoxan (RX). At the doses used in the present study, PA was the only antagonist that significantly reduced the blood flow decrease seen on activation of sympathetic fibers, although PBZ also reduced this response. Idazoxan, however, did not induce the consistent effect on blood flow decreases seen on sympathetic activation. All three ..cap alpha..-adrenoceptor antagonists almost abolished the effects of exogenously administered NA and ADR. The results suggest the presence of functional post-junctional adrenoceptors of both the ..cap alpha.. 1 and ..cap alpha.. 2 subtypes in the sympathetic regulation of the blood flow in the ...

1988-01-01

280

Effect of intermetallic growth rate on spontaneous whisker growth from a tin coating on copper  

British Library Electronic Table of Contents (United Kingdom)

Intermetallic compound (IMC) growth at the interface between a Sn coating and a Cu substrate with or without a Ni underlayer and its related stress state was evaluated by real-time measurements using the flexure beam method. For the Sn coating without a Ni underlayer, pyramid-shaped IMC grains of Cu6Sn5 grew along the grain boundaries of Sn from the Cu substrate, especially at the triple grain boundary junctions and the IMC grains rapidly increased their volume during the initial 3?days, During this time, the IMC growth rate was 2.3??m3/day and the compressive stress in the Sn coating rapidly developed and became saturated at about ?11?MPa. In contrast, platelet IMC grains of Ni3Sn4 formed at the surface of the Ni underlayer and the IMCs grew at a rate of 1.0??m3/day for the Sn/Ni coating....

2011-01-01

281

Current trends in ion implantation  

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these ...

2001-07-01

282

Changes in intracellular Ca2+ levels induced by cytokines and P2 agonists differentially modulate proliferation or commitment with macrophage differentiation in murine hematopoietic cells.  

Science.gov (United States)

The role of intracellular Ca2+ (Ca2+i) on hematopoiesis was investigated in long term bone marrow cultures using cytokines and agonists of P2 receptors. Cytokines interleukin 3 and granulocyte/macrophage colony stimulator factor promoted a modest increase in Ca2+i concentration ([Ca2+]i) with activation of phospholipase Cgamma, MEK1/2, and Ca2+/calmodulin kinase II. Involvement of protein kinase C was restricted to stimulation with interleukin 3. In addition, these cytokines promoted proliferation (20 times) and an increase in the Gr-1(-)Mac-1+ population with participation of gap junctions (GJ). Nevertheless ATP, ADP, and UTP promoted a large increase in [Ca2+]i, moderate proliferation (6 times), a reduction in the primitive Gr-1(-)Mac-1(-)c-Kit+ population, and differentiation into macrophages without participation of GJ. It is likely that Ca2+i participates as a regulator of hematopoietic signaling: moderate increases in [Ca2+]i would be related to ...

2008-09-05

283

Boron-enhanced diffusion of boron from ultralow-energy ion implantation  

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in ...

1999-04-01

284

Boron-enhanced diffusion of boron from ultralow-energy ion implantation  

International Nuclear Information System (INIS)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. copyright 1999 ...

1999-04-01

285

Analysis of the VVER-440 reactor steam generator secondary side with the RELAP5/MOD3 code  

Energy Technology Data Exchange (ETDEWEB)

Nuclear Engineering Laboratory of the Technical Research Centre of Finland has widely used RELAP5/MOD2 and -MOD3 codes to simulate horizontal steam generators. Several models have been developed and successfully used in the VVER-safety analysis. Nevertheless, the models developed have included only rather few nodes in the steam generator secondary side. The secondary side has normally been divided into about 10 to 15 nodes. Since the secondary side at the steam generators of VVER-440 type reactors consists of a rather large water pool, these models were only roughly capable to predict secondary side flows. The paper describes an attempt to use RELAP5/MOD3 code to predict secondary side flows in a steam generator of a VVER-440 reactor. A 2D/3D model has been developed using RELAP5/MOD3 codes cross-flow junctions. The model includes 90 volumes on the steam generator secondary side. The model has been used to calculate steady state flow conditions in the secondary ...

1993-12-31

286

Analysis of the VVER-440 reactor steam generator secondary side with the RELAP5/MOD3 code  

International Nuclear Information System (INIS)

Nuclear Engineering Laboratory of the Technical Research Centre of Finland has widely used RELAP5/MOD2 and -MOD3 codes to simulate horizontal steam generators. Several models have been developed and successfully used in the VVER-safety analysis. Nevertheless, the models developed have included only rather few nodes in the steam generator secondary side. The secondary side has normally been divided into about 10 to 15 nodes. Since the secondary side at the steam generators of VVER-440 type reactors consists of a rather large water pool, these models were only roughly capable to predict secondary side flows. The paper describes an attempt to use RELAP5/MOD3 code to predict secondary side flows in a steam generator of a VVER-440 reactor. A 2D/3D model has been developed using RELAP5/MOD3 codes cross-flow junctions. The model includes 90 volumes on the steam generator secondary side. The model has been used to calculate steady state flow conditions in the secondary ...

1992-09-29

287

A novel photodiode made of hybrid organic/inorganic nanocomposite  

International Nuclear Information System (INIS)

Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO_3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H_3PO_4-SrTiO_3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height #phi#_b value for the diode was found to be 0.56 eV. The Ag/Pani-H_3PO_4-SrTiO_3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage V_o_c of 2.49 V, and short-circuit current I_s_c of 5.6 mA under light illumination #lambda# = 460 nm. The conversion efficiency was found to be 5.2%. It is evaluated that the ...

2009-08-07

288

THE DOUBLE-DEGENERATE NUCLEUS OF THE PLANETARY NEBULA TS 01: A CLOSE BINARY EVOLUTION SHOWCASE  

International Nuclear Information System (INIS)

We present a detailed investigation of SBS 1150+599A, a close binary star hosted by the planetary nebula PN G135.9+55.9 (TS 01). The nebula, located in the Galactic halo, is the most oxygen-poor known to date and is the only one known to harbor a double degenerate core. We present XMM-Newton observations of this object, which allowed the detection of the previously invisible component of the binary core, whose existence was inferred so far only from radial velocity (RV) and photometric variations. The parameters of the binary system were deduced from a wealth of information via three independent routes using the spectral energy distribution (from the infrared to X-rays), the light and RV curves, and a detailed model atmosphere fitting of the stellar absorption features of the optical/UV component. We find that the cool component must have a mass of 0.54 #+-# 0.2 M_s_u_n, an average effective temperature, T_e_f_f, of 58,000 #+-# 3000 K, a mean radius of 0.43 #+-# ...

2010-05-01

289

Measurement and analysis of neutron production cross sections and determination of some reaction rates for nuclear astrophysical calculations  

International Nuclear Information System (INIS)

The absolute cross sections of "2"3Na(p,n)"2"3Mg, "2"7Al(p,n)"2"7Si and "3"0Si(#alpha#,n)"3"3S reactions were measured in the incident energy range of 5.05 to 5.80, 5.80 to 6.25 and 3.975 to 6.235 MeV respectively using a spherically shaped 4#pi# neutron detector. In the energy range 5.80 to 7.80 and 6.235 to 11.30 MeV the absolute cross sections of "2"3Na(p,n)"2"3Mg and "3"0Si-(#alpha#,n)"3"3S reactions were determined by optical model calculations. The cross sections of the inverse reactions "2"3Mg(n,p)"2"3Na and "3"3S(n,#alpha#)"3"0Si were also calculated by the same method for the neutron energy range of 10 keV to 7.50 MeV for each reaction. The cross section of the latter reaction in the neutron energy range of 10 keV to 840 keV was also determined from its inverse reaction "3"0Si(#alpha#,n)"3"3S by the application of the detailed balance theorem. The reactions for which the cross sections were determined are of importance in stellar evolution and nucleosynthesis in stars. The ...

290

The effects of energy non-monochromaticity of "1"1B ion beams on "1"1B diffusion  

International Nuclear Information System (INIS)

We have shown that energy contamination introduced by ion beam deceleration technology that is used to increase the beam currents available for low energy boron implants, can affect fabricated junctions adversely. A 4 keV "1"1B beam is extracted and retarded by a potential of -3.5 keV for 0.5 keV "1"1B implantation, or by a potential of -3.8 keV for 0.2 keV "1"1B implantation. Intentional beam contamination was introduced by turning off the retarding potential to allow the 4 keV "1"1B ions to irradiate Si wafers directly. The percentage of contamination, at levels of 0.1%, 0.2% and 0.3% was introduced. Rapid thermal annealing of all the implanted samples was performed under N_2 ambient at 1050 deg. C for 1 s. The dopant tail profiles themselves are not significant if the contamination levels are low. However, the much higher damage level coming from high energy contamination increases the transient enhanced diffusion of "1"1B more than proportionately, resulting in ...

2005-08-01

291

Simulation of dopant diffusion and activation during flash lamp annealing  

International Nuclear Information System (INIS)

A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was performed at various peak temperatures in a Mattson Millios"T"M fRTP"T"M system. The measured wafer temperature ...

2008-12-05

292

Regulation of NMDA and AMPA receptors during the maturation phase of chicken brain development  

International Nuclear Information System (INIS)

Full text: The maturation of chicken forebrain is protracted and occurs well after synapse formation providing a good model for studying mechanisms of brain maturation. Using microslices from immature (10 day) and adult chicken forebrain prepared after decapitation, we have examined functional properties of NMDA and AMPA receptors by measuring agonist-induced uptake of "4"5Ca"2"+ . The rate and extent of NMDA induced "4"5Ca"2"+ accumulation decreased during maturation with no change in EC_5_0. The rate and extent of the AMPA induced response also decreased with a 60-fold increase in EC_5_0. However, the total NMDA receptor content did not change as indicated by 3 H-MK801 binding and NR1 immunoreactivity in P2 fractions. Similarly, there was no change in the B_m_a_x of "3H-AMPA, though there was a two-fold increase in K_D, and little or no change in the immunoreactivity in GluR1, 2, 2/3 or 4. These results suggest that it is the regulation of receptors, their subunit composition and/or ...

2002-02-04

293

Plasma-based ion implantation and deposition: A review of physics,technology, and applications  

Energy Technology Data Exchange (ETDEWEB)

After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. ...

2005-05-16

294

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {l_brace}311{r_brace} defects during Ostwald ripening with an ...

1997-05-01

295

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon  

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# defects during Ostwald ripening with an activation ...

296

Noninvasive assessment of skin iron content in hemodialysis patients. An index of parenchymal tissue iron content  

Energy Technology Data Exchange (ETDEWEB)

Iron overload has been described in patients undergoing chronic hemodialysis. The present study was undertaken to evaluate a rapid, noninvasive method for determination of skin iron by the technique of diagnostic x-ray spectrometry (DXS). Thirty-five patients receiving chronic hemodialysis treatment entered the study and were compared with 25 normal controls. Since pathological skin iron deposition occurs mainly at the dermal-epidermal junction in the basal cells of the epidermis, measurements were made in the thenar eminence representing mainly epidermal tissue (FeE), and in the forearm representative mainly of dermis (FeD). The mean +/- SD FeE iron concentrations were equivalent to 14.5 +/- 8.8 and 18.2 +/- 10.2 parts per million wet weight tissue (ppm) and both were significantly higher than in normal controls in which they averaged 9.2 +/- 2.5 ppm (P less than 0.005) and 10.2 +/- 3.2 ppm (P less than 0.001), respectively. There was significant positive ...

1988-07-01

297

Neuromuscular effects of candoxin, a novel toxin from the venom of the Malayan krait (Bungarus candidus).  

Science.gov (United States)

1 Candoxin (MW 7334.6), a novel toxin isolated from the venom of the Malayan krait Bungarus candidus, belongs to the poorly characterized subfamily of nonconventional three-finger toxins present in Elapid venoms. The current study details the pharmacological effects of candoxin at the neuromuscular junction. 2 Candoxin produces a novel pattern of neuromuscular blockade in isolated nerve-muscle preparations and the tibialis anterior muscle of anaesthetized rats. In contrast to the virtually irreversible postsynaptic neuromuscular blockade produced by curaremimetic alpha-neurotoxins, the neuromuscular blockade produced by candoxin was rapidly and completely reversed by washing or by the addition of the anticholinesterase neostigmine. 3 Candoxin also produced significant train-of-four fade during the onset of and recovery from neuromuscular blockade, both, in vitro and in vivo. The fade phenomenon has been attributed to a blockade of putative presynaptic nicotinic ...

2003-06-01

298

Molecular dynamics studies of silicon ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage ...

1994-12-31

299

Defect engineering via ion implantation to control B diffusion in Si  

International Nuclear Information System (INIS)

The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the benefit of the cavity ...

2009-03-15

300

Andreev reflection and order parameter symmetry in heavy-fermion superconductors: the case of CeCoIn5  

International Nuclear Information System (INIS)

We review the current status of Andreev reflection spectroscopy on the heavy fermions, mostly focusing on the case of CeCoIn5, a heavy-fermion superconductor with a critical temperature of 2.3 K. This is a well-established technique to investigate superconducting order parameters via measurements of the differential conductance from nanoscale metallic junctions. Andreev reflection is clearly observed in CeCoIn5 as in other heavy-fermion superconductors. Considering the large mismatch in Fermi velocities, this observation seemingly appears to disagree with the Blonder-Tinkham-Klapwijk (BTK) theory. The measured Andreev signal is highly reduced to the order of maximum ?13% compared to the theoretically predicted value (100%). The background conductance exhibits a systematic evolution in its asymmetry over a wide temperature range from above the heavy-fermion coherence temperature down to well below the superconducting transition temperature. Analysis of the ...

2009-03-11

301

All focused ion beam fabricated MgB_2 inter-grain nanobridge dc SQUIDs  

International Nuclear Information System (INIS)

We have fabricated MgB_2 dc SQUIDs (superconducting quantum interference devices) containing inter-grain nanobridges as Josephson elements by a focused ion beam (FIB) etching method and measured their transport properties. The entire structure including the SQUID loop was patterned only using a FIB. The beam energy was 30 kV and the current was 0.9 nA for larger structures and 34 and 1.5 pA for the nanobridge pattern. Each bridge with a nominal width of 100 nm crossed a single grain boundary in the normal direction. The SQUID loop had a 3.1 #mu#m x 3.1 #mu#m hole with a 2 #mu#m average linewidth, corresponding to an inductance of 5.1 pH. The nanobridges had a two-step transition with an increase in the resistivity of more than a decade and a substantial decrease in the critical current density. Current-voltage characteristics showed a resistively shunted junction behavior at all temperatures below T_c, which implies that the current in the inter-grain nanobridges ...

2009-06-01

302

CT assessment of blunt diaphragmatic injuries. A retrospective study on 35 cases; Sensibilita' diagnostica della Tomografia Computerizzata nei traumi chiusi del diaframma. Studio retrospettivo di 35 casi consecutivi  

Energy Technology Data Exchange (ETDEWEB)

Purpose of this work is to evaluate the effectiveness and role of CT in blunt diaphragmatic injuries by reviewing our 8-year experience. It is reviewed the preoperative CT findings of 35 patients with surgically confirmed diaphragmatic rupture. Surgical repair was performed in the acute setting (within 12 hours of trauma) in 22 cases, and late (8 months-5 years) in 13 cases. Twenty-eight patients (80%) were examined with conventional CT and 7 (20%) with Helical CT. Of the 13 patients examined long after trauma, the left hemi diaphragm was ruptured in 12 cases (with visceral herniation in 4), and the right hemi diaphragm in 1, with no herniation. The diaphragmatic rent was found in the dome (15 cases, 43%), muscolotendinous junction (11 cases, 31%), muscular portion (8 cases, 23%), and at the muscular attachments on the ribs (1 case, 3%). As for the site of diaphragmatic injury, CT never depicted the diaphragmatic rent in the dome and at the muscolotendinous ...

2000-02-01

303

Superconducting Properties of Epitaxial Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Films and Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA)/PRASEODYMIUM BARIUM(2) COPPER(3) OXYGEN(7-Z)/YTTRIUM BARIUM(2) COPPER(3) OXYGEN(7 - Heterostructures Grown by Pulsed Laser Deposition  

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

1992-01-01

304

Study of silicon damage caused by ultra-low energy boron implantation  

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as well as TRIM ...

305

Monthly report of activities: APRIL 1, 1969  

Science.gov (United States)

This is the first of a series of monthly reports summarizing the status of the work of the National Accelerator Laboratory. This first report will cover developments since the publication of the Design Report in January. Authorization hearings were held before the Joint Committee on Atomic Energy on February 21, 1968. Dr. Wilson described the plans and designs of the Laboratory. The present plan of the Laboratory is that the Village of Weston will be utilized for office, laboratory, and shop space during construction. The Laboratory business office is already occupying several houses. The linac section is occupying three houses for offices and construction of an 8,000 sq ft laboratory building for linac work is almost complete. Another house is being used and a 4,500 sq ft inflatable building is being constructed for model-magnet and vacuum testing. Other temporary buildings will be constructed for use by other sections. We plan to move into the village as rapidly as is feasible and it ...

1968-04-01

306

Computed tomography whole body imaging in multi-trauma: 7 years experience  

International Nuclear Information System (INIS)

AIM: To assess the impact of the introduction of a computed tomography (CT) imaging protocol for multi-trauma patients on the workload, overall diagnostic yield, and effect on detection of cervical spine injury and pneumothorax. METHOD: Between February 1997 and April 2004, all patients presenting acutely to the Emergency Department (ED) with haemodynamically stable trauma (Abbreviated Injury Scale 3 or more) involving more than two body systems were imaged with a comprehensive pre-set helical CT protocol (including non-contrast head, cervical spine: cranio-cervical and cervico-thoracic junctions; and oral and intravenous contrast-enhanced thoracic, abdomen and pelvis) after initial triage and a standard trauma series of radiographs (chest, lateral C-spine and pelvis). Diagnosis of cervical spine fracture and pneumothorax was noted before and after the CT protocol was carried out and findings from all studies were recorded prospectively. RESULTS: Over the 7-year ...

2006-04-01

307

Characterization of an add-on multileaf collimator for electron beam therapy  

Energy Technology Data Exchange (ETDEWEB)

An add-on multileaf collimator for electrons (eMLC) has been developed that provides computer-controlled beam collimation and isocentric dose delivery. The design parameters result from the design study by Gauer et al (2006 Phys. Med. Biol. 51 5987-6003) and were configured such that a compact and light-weight eMLC with motorized leaves can be industrially manufactured and stably mounted on a conventional linear accelerator. In the present study, the efficiency of an initial computer-controlled prototype was examined according to the design goals and the performance of energy- and intensity-modulated treatment techniques. This study concentrates on the attachment and gantry stability as well as the dosimetric characteristics of central-axis and off-axis dose, field size dependence, collimator scatter, field abutment, radiation leakage and the setting of the accelerator jaws. To provide isocentric irradiation, the eMLC can be placed either 16 or 28 cm above the isocentre through ...

2008-02-21