The properties of ZnOfilms were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnOfilms decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnOfilms increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnOfilms annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnOfilms annealed in ambient H2/Ar at low ...
Abstract A series of polypropylene carbonate (PPC)/ZnO nanocomposite films with different ZnO contents were prepared via a solution blending method. The morphological structures, thermal properties, oxygen permeability, water sorption, and antibacterial properties of the films were investigated as a function of ZnO concentration. While all of the composite films with less than 5 wt % ZnO exhibited good dispersion of ZnO in the PPC matrix, FTIR and SEM results revealed that solution blending did not lead to a strong interaction between PPC and unmodified ZnO. As such, poor dispersion was induced in the composite films with a high ZnO content. By incorporating inorganic ZnO filler nanoparticles, the diffusion coefficient, water uptake in equilibrium, and oxygen ...
Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnOfilms were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnOfilms by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnOfilms are also discussed.
Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.
Randomly oriented ZnO microsheets were successfully self-assembled on TiO2 nanoparticle (TN) film to act as the scattering layer via a cathodic electrodeposition process. The light scattering properties of ZnO microsheets were studied by UV-Vis spectrometer in the 400?800 nm wavelength range. It was found that ZnO microsheets exhibited excellent ability to scatter the incident light for ZnO microsheet-TiO2 nanoparticle (ZT) composite films. The results showed that dye-sensitized solar cells (DSSCs) fabricated with ZT composite films showed higher short-circuit density (J sc) and conversion efficiency than TN-based DSSCs, due to the light scattering properties of ZnO microsheets.
Metastable yttrium-oxide films are synthesized using reactive sputter deposition. The yttrium concentration of the as-deposited film is found to vary as a function of the sputter deposition rate. In addition to the synthesis of the cubic equilibrium phase...
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnOfilms was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnOfilms was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated ...
The bibliography contains citations concerning the properties of tantalum and tantalum compound films formed by sputtering techniques. Topics include processes, and electrical, magnetic, and dielectric properties of the sputteredfilms. Tantalum compounds studied include nitrates, oxides, and aluminides. The structural properties of sputteredfilms are also discussed. (Contains a minimum of 105 citations and includes a subject term index and title list.)
Nanocrystalline ZnOfilms were fabricated via a simple method involving the oxidation of Zn films at a remarkably low temperature of 380 C. X-ray diffraction study confirmed that the Zn films were completely oxidized even at the low temperature of 380 C and the ZnOfilms fabricated were of polycrystalline wurtzite structure. Room temperature optical pumping using a frequency-quintupled Q-switched Nd:YAG laser ({lambda}=213 nm) exhibited that sharp peaks at around 3.12 eV emerged above excitation powers of {proportional_to}7 MW/cm{sup 2}, demonstrating lasing in the ZnOfilms. These results represent that the process is a simple, promising approach for fabricating ZnO of sufficient optical performance for use as ultraviolet (UV) light emitters and an alternative UV laser source; both are key ...
A radio frequency sputtering apparatus with a pair of targets has been developed for depositing a film of uniform thickness onto a complex-geometric specimen such as the retainer of a ball bearing. The deposition characteristics of the apparatus were compared with those of the conventional sputtering apparatus. Lubrication properties of MoS/sub 2/ films made by these devices were also compared under a variety of conditions. Finally, friction and wear of MoS/sub 2/ films applied to angular-contact type ball bearings of 20 mm bore were studied in air, nitrogen and vacuo. The two-target sputtering has an advantage mentioned above. However, the films deposited by the method exhibited a rather short wear life because of the temperature rise of the substrate during ion bombardment and during the sputtering process. This ...
Properties of photoconductive ultraviolet detectors fabricated on ZnOfilms were presented. Highly c-axis oriented ZnOfilms were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...
The bibliography contains citations concerning the structural properties of sputtered tantalum and tantalum compounds. The preparation of thin film capacitors and resistors is described. The electrical properties of the sputteredfilms are also included. The influence of the substrate on the properties of the coatings is considered, including adherence of the coating to the substrate, and the effects of impurities on coating integrity. (Contains 250 citations and includes a subject term index and title list.)
We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in the gas flow during the growth process. Smooth and flat layers were produced with a high Ar/O ratio, while porous layers with various morphologies were obtained with a low Ar/O ratio. The layers produced with O/Ar ration equal to 10 exhibit extremely high near-bandgap luminescence intensity even higher in comparison with bulk ZnO single crystals. The free carrier density estimated from the analysis of photoluminescence spectra is also very high in these samples suggesting that these technological conditions promote both optical and electrical activation of the doping Al impurity. The samples grown with high Ar/O ratios exhibit strong visible emission which is controlled by the ...
Properties of photoconductive ultraviolet detectors fabricated on ZnOfilms were presented. Highly c-axis oriented ZnOfilms were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant {tau} obtained from the curve ...
Properties of photoconductive ultraviolet detectors fabricated on ZnOfilms were presented. Highly c-axis oriented ZnOfilms were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve ...
Sputter-deposited tantalum (Ta) and reactively sputter-deposited Ta-nitride films were studied with respect to the passivation capability against copper (Cu) oxidation in thermal O{sub 2} ambient. A 200 {angstrom} Ta or Ta-nitride film was sputter-deposited on a 2,000 {angstrom} Cu film using a Ta target in an Ar/N{sub 2} gas mixture. With Ta passivation, Cu was not oxidized at temperatures up to 400 C, which can be further improved by using passivation of an amorphous Ta-nitride film deposited in an appropriate condition. The absence of long-range defects in the Ta-nitride film was presumably responsible for this improvement. However, sputtering-induced surface damage by excess N{sub 2} in the sputter gas mixture may reduce the passivation capability of Ta-nitride ...
Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputteredfilms perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.
Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.
The refractory nature and high ductility of body centered cubic (bcc) phase tantalum makes it a suitable material for corrosion- and wear-resistant coatings on surfaces that are subjected to high stresses and harsh chemical and erosive environments. Sputter deposition can produce thick tantalum films but is prone to forming the brittle tetragonal beta phase of this material. Efforts aimed at forming thick bcc phase tantalum coatings in both flat plate and cylindrical geometries by high-rate triode sputtering methods are discussed. In addition to substrate temperature, the bcc-to-beta phase ratio in sputtered tantalum coatings is shown to be sensitive to other substrate surface effects.
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.
We have measured K-edge X-ray absorption spectra of argon in sputtered aluminum films at a synchrotron radiation facility (the Photon Factory). We found that the energy and shape of white line change when the film is annealed at 500 C and the spectrum becomes resembling that of argon implanted in silicon. From the analyses of the X-ray absorption spectra and TEM observation we concluded that argon exists as very small atom clusters with a diameter less than 1 nm or exist as isolated atoms in the as-sputtered aluminum film, and that the size of the clusters become as big as 10 nm diameter when the film is heated. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)
Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputteredfilms.
Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputteredfilms.
High quality Nb_3Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 #mu#m/min at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3"0K, J/sub c/(0)'s of 15 x 10"6 A/cm"2 and Hc_2 as high as 240 k0e have been achieved in 1-3 #mu#m films deposited from a Nb_3Sn reacted powder target with substrate temperatures between 600 and 800"0C. The films exhibit smooth surfaces and, generally, a (200) preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to ...
Lithium phosphorous oxynitride(Lipon) thin films as a lithium ion conductive electrolyte were prepared by radio frequency reactive sputtering in N2 plasma. The properties of the amorphous Lipon solid electrolyte were investigated as a function of N2 pressure during reactive sputtering. The ionic conductivity and the electrochemical stability of Lipon thin films improved drastically as the N2 pressure decreased. The ionic conductivity closed to 10?6 S cm?1 and obtained a stability window of 1.0?5.0 V with an N2 pressure of 5 mTorr, where the number of nitrogen bonds between the phosphate groups were more than those formed at higher pressure. It was possible to fabricate the Li//LiCoO2 complete thin film battery using this Lipon solid electrolyte, which exhibited excellent discharge characte...
Nanocrystalline chromium oxynitride films were deposited by reactive RF magnetron sputtering of metallic chromium target in argon and helium atmospheres. The paper deals with consequence of increase in oxygen partial pressure on structural, hydrophobic and optical properties of chromium oxynitride films. The film stoichiometry changes from CrN and Cr2O3 to only Cr2O3 with increase in oxygen partial pressure as evident from X-Ray Diffraction analysis in both cases. The average crystallite size decreases with increase in oxygen partial pressure for both gas atmospheres. The thickness calculated from transmission data and surface profilometer are in good harmony with each other. The deposited films are hydrophobic by nature and the contact angle of the films varies as a function of surface ro...
Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the ...
This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ filmssputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance ...
Tantalum and tantalum-based thin films have gained precedence as the diffusion barrier for copper interconnects used in the latest generation of integrated circuits (ICs). The paper presents insight and observations on the covariance of texture and grain size of wrought tantalum sputtering targets and their influence on sputtering performance. Previous studies involving deposition trials of tantalum targets of varying metallurgical character had demonstrated that both grain size and textural homogeneity is critical for assuring reliable sputtering performance of tantalum. Subsequently, a model had been proposed to prescribe how localized texture bands and orientation clusters in tantalum are effectively resistant to sputter erosion. In this paper, results of atomic force microscopy (AFM) and orientation imaging microscopy (OIM{sup TM}) analyses on the eroded surface of a tantalum ...
Chemical characterization of passive films formed on AISI 304 austenitic stainless steel, in a borate/boric acid solution at pH 9.2, under various conditions of potential, temperature, and polarizations time, was made by Auger electron spectroscopy combined with ion sputtering, and x-ray photoelectron spectroscopy (XPS). The depth chemical composition, thickness, and duplex character of the passive layers were determined after processing AES sputter profiles by their quantitative approach based on the sequential layer sputtering model. Moreover, separated contributions of elements in their oxidized and unoxidized state could be disclosed from part to part of the oxide-alloy interface. The XPS study specified the chemical bondings which take placed inside the film, between Fe and oxygen (and water).
Highly water-repellent surfaces have been prepared from arrayed nanowires of zinc oxide (ZnO) by a treatment with stearic acid. The layers are electrochemically deposited on a nanocrystalline seed layer from an oxygenated aqueous zinc chloride solution. An advancing contact angle (CA) as high as 176{sup 0} is obtained with a very small hysteresis {approx}1{sup 0}. These results, supplemented by infrared spectroscopy, show that the stearic acid forms a very well-packed self-assembled monolayer. The CA measurements show a very good stability of the treated surface even when exposed to harsh conditions or long-term ambient illumination.
The refractory nature and high ductility of body centered cubic (bcc) phase tantalum makes it a suitable material for corrosion- and wear-resistant coatings on surfaces which are subjected to high stresses and harsh chemical and erosive environments. Sputter deposition can produce thick tantalum films but is prone to forming the brittle tetragonal beta phase of this material. Efforts aimed at forming thick bcc phase tantalum coatings in both flat plate and cylindrical geometries by high-rate triode sputtering methods are discussed. In addition to substrate temperature, the bcc-to-beta phase ratio in sputtered tantalum coatings is shown to be sensitive to other substrate surface effects.
The corrosion behavior of the sputter-deposited amorphous or nanocrystalline W-Nb alloys is studied in 10% NaCl, 0.1 and 1 M NaOH solutions at 24 deg. C, open to air using immersion tests and electrochemical measurements. Niobium metal acts synergistically with tungsten in enhancing the corrosion resistance of the W-Nb alloys so as to show lower corrosion rates than the corrosion rates of the alloy-constituting elements in almost all examined solutions. Corrosion rates of W-Nb alloys are about more than one order of magnitude less than that of the sputter-deposited tungsten and even lower than that of sputter-deposited niobium. The stability of the anodic passive films formed on the W-Nb alloys increase with niobium content.
Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the ...
Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation of oxygen in a thin Fe film during its irradiation with swift heavy ions. It is observed that the adsorbed oxygen diffuses in to the Fe film. The incorporation of oxygen and its diffusion in the bulk of the film is a manifestation of extremely large electronic energy deposition by the incident ions. It is shown that the experimentally observed high diffusivity of oxygen in Fe during irradiation is due to the existence of transient melt phase of Fe.
The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(..cap alpha..) and HgM sub(..cap alpha..) was found to be approximately 0.65 ..mu..m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 ..mu..m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the ...
The composition of sputter-deposited HgS films was determined by electron microprobe analysis. From the relative x-ray intensity as a function of film thickness, the depth of the ionizations that produce SK sub(#alpha#) and HgM sub(#alpha#) was found to be approximately 0.65 #mu#m at an accelerating voltage of 15 kV. This value agreed well with a value calculated from Castaings' empirical law after absorption correction. The determination of film composition was limited to sufficiently thicker films than this critical value, usually 1 - 2 #mu#m thick. The relation between the conposition of bulk standard determined by chemical analysis and the x-ray intensity ratio was used for the correction of film composition. The results showed that the crystal structure of HgS films was independent of the composition, i.e., the growth of metastable ...
Nano structured carbon nitride thin films were deposited at different RF powers in the range of 50 W to 225 W and constant gas ratio of (argon: nitrogen) Ar:N_2 by RF magnetron sputtering. The atomic percentage of Nitrogen: Carbon (N/C) content and impedance of the films increased from 14.36% to 22.31% and 9 x 10"-"1 #OMEGA# to 7 x 10"5 #OMEGA# respectively with increase in RF power. The hardness of the deposited films increased from 3.12 GPa to 13.12 GPa. The increase in sp"3 hybridized C-N sites and decrease of grain size with increase in RF power is responsible for such variation of observed mechanical and electrical properties.
ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an ...
In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain ...
In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance ...
Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)
Emeraldine base (EB) polymer?ZnO nanoparticles composite films has been synthesized by solution casting technique on ITO-coated glass substrate and characterized by XRD, FTIR and TEM for their structure and morphology. Dielectric behaviour of these composite films has been investigated in the very low frequency region to medium frequency region (1?kHz?1?MHz). The dielectric constant of the composite with 30% nanoparticles is almost one-tenth of the pure EB. The dielectric value becomes constant in the frequency region greater than 400?kHz. The change in dielectric behaviour of the composite is explained on the basis of multilayered interface formed between the ZnO nanoparticles and emeraldine chains. Nanoparticles have high energy surface which is responsible for the decrease of free volum...
By magnetron sputtering model steel films with specific properties can be prepared for purposive surveys. By changing the deposition parameters certain properties of these films can be influenced. For this thesis steel films with 18% Cr and 8% Ni have been prepared in order to study specific parameters on the corrosion resistance of bulk stainless steel. Chemical composition, microstructure, and surface morphology of these films have been characterized. In comparison to bulk steel sheets with the same chemical composition they have a smaller grain size and a ferritic structure. In contrast to bulk steel sheets they don`t contain any nonmetallic inclusions like Mn-sulfides. The influence of these structural differences on the corrosion resistance has been studied. For this purpose the electrochemical properties of the sputter-deposited steels have been compared ...
Dominating factors in plasma nitriding and plasma condition that makes nitriding possible in plasma nitriding process of metals having hard oxide film were studied. In case of stainless steel, oxide filmsputtering was easier comparing to nitriding layer. Three phenomena such as sputtering of oxide layer, formation of nitriding layer and sputtering of nitriding layer occurred simultaneously. Nitriding was achieved when the formation of nitriding layer reached the peak comparing to the removal of nitriding layer after the removal of oxide layer. Situations of metallic surface of stainless steel in surface nitriding were divided into four categories and they were, situation where oxide layer remained as it is, situation where nitriding layer was formed although oxide layer remained in some part, situation where only nitriding layer was formed and situation where ...
Aluminium nitride (AlN) is a very interesting ceramic because of its combination of properties such as high thermal stability, high hardness and an unusual combination of high thermal and low electrical conductivity. But it is very difficulty to obtain an AlN layer on the aluminium substrates by thermochemical nitriding process. Since a thin film of aluminium oxide existing on the surface of every aluminium substrate prevents the nitrogen atoms from diffusing into the aluminium lattice. However, it is possible to sputter the oxide film away from the aluminium surface in a glow discharge with the use of plasma nitriding technique and to allow the formation of AlN layer on the aluminium bulk. In the present work specimen of aluminium Al 99.5 has been plasma nitrided in a modified plasma nitriding unit, in which a diffusion pump was used to obtain an especially low partial pressure of oxygen in the vauum chamber. The ...
Carbon films have been made by a variety of techniques, including evaporation, sputtering, and laser or thermal pyrolysis of organic polymers. Polyacrylonitrile (PAN) is often used as a carbon precursor, since low-temperature thermo-oxidative pretreatment produces a material which can be pyrolyzed without loss of shape. This is the basis for the production of carbon fibers with good mechanical properties. We report here the formation of very thin films of carbon (500 to 1500 A) by pyrolysis of spin-cast PAN. Using this technique, large, conductive films can be made which are sufficiently robust to allow intact lift-off and transfer of the films from one substrate to another. Such films are chemically inert, but can be photolithographically patterned and etched with an oxygen plasma.
Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.
Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.
The crystallite size and orientation in molybdenum films prepared by magnetron sputtering at a low rate of typical 1 (angstrom)s and a pressure of 0.45 Pa was investigated by X-ray diffraction and texture analysis. The surface topography was studied using atomic force microscopy. Increasing the film thickness from 20 nm to 3 microm, the films show a turnover from a (110) fiber texture to a (211) mosaic-like texture. In the early state of growth (20 nm thickness) the development of dome-like structures on the surface is observed. The number of these structures increases with film thickness, whereas their size is weakly influenced. The effect of texture turnover is reduced by increasing the deposition rate by a factor of six, and it is absent for samples mounted above the center of the magnetron source. The effect of texture turnover is related to the bombardment of the ...
Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)
We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen ...
Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 ...
One of the most challenging topics in the area of organic electronic devices is the growth of transparent electrodes onto flexible polymeric substrates that will be characterized by enhanced conductivity in combination with high optical transparency. An essential aspect for these materials is their synthesis and/or microstructure which define the transparency, the stability and the interfacial chemistry which in turn determine the performance and stability of the organic electronic devices, such as organic light emitting diodes, organic photovoltaics, etc. In this work, we will discuss the latest advances in the growth of organic (e.g. PEDOT:PSS) and inorganic (e.g. zinc oxide-ZnO, indium tin oxide-ITO) conductive materials and their deposition onto flexible polymeric substrates. We will compare the optical, structural, nano-mechanical and nano-topographical properties of the inorganic and organic materials and we investigate the effect of their structure on their properties and ...
The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in rectangular magnetron ...
Nano-wire arrays of Niobium were produced by small angle sputtering on facetted sapphire, using the self shadowing effect of the facets. A wire width of about 80 nm was adjusted, the mean (maximum) wire height was about 20 nm (30 nm), the length can be in the cm range. Meander-film morphologies of 20 nm mean (26 nm maximum) thickness were produced by conventional sputtering onto smooth sapphire substrates at elevated temperatures. The morphology of the wires was investigated with atomic force microscopy (AFM), using contact mode. Meander-films were studied by scanning tunnelling microscopy (STM). Hydrogen loading was performed by instantaneously increasing the hydrogen gas pressure above the solubility limit. Thus, an elongated hydride could be monitored in an about 30 nm thick wire. STM studies on meander-films show the presence of cylindrical hydrides. Local out-of-plane and ...
Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All ...
A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of ...
Uniform and transparent thin films of Zn_1_-_xCo_xO (0 #=# 0.035, CoO (cubic) was detected as the secondary phase. Influence of Co addition on the volume fraction of grain boundaries has been interpreted. Increase in Co content in the range 0 #<=# x #<=# 0.10 led to quenching of near-band edge and blue emissions, decrease in band gap energy (E_g) from 3.36 eV to 3.26 eV, decrease in film thickness and refractive index and an increase in extinction coefficient of Zn_1_-_xCo_xO thin films. The change in nature of stress from compressive to tensile with lower to higher doping of Co is corroborative with the angular peak shift of (002) plane of ZnO lattice. An overall increase in microhardness of Zn_1_-_xCo_xO thin films up to x = 0.05 is attributed to change in microstructure and evolution of secondary phase and as the secondary phase separates out the overall stress is released ...
Reactive Magnetron Sputtering is a complex process and huge efforts are made addressing the understanding of its fundamental phenomena and the simulation of the deposition process by e.g. Particle in Cell/Monte Carlo (PIC/MC). One of the most uncertain parameters in this reactive sputtering process is the incorporation coefficient of the reactive gas in the growing layer, i.e. the real-time sticking coefficient during deposition. In this work, mass spectrometry is used to deliver more insights on this complex matter. Earlier, a method was developed to determine the incorporation coefficient of the reactive gas molecules in the growing metal film, using mass spectrometry combined with thin film analysis techniques (electron probe microanalysis and x-ray photoelectron spectroscopy). This method delivers a global, realistic incorporation coefficient which can be used in models for the reactive ...
Zinc oxide thin films were obtained by laser ablation of a Zn target in oxygen reactive atmosphere, the oxygen being supplied either by a standard gas inlet valve or from a radio-frequency (rf) oxygen plasma. Pt-coated silicon and MgO were used as substrates. The influence of the deposition parameters as laser wavelength (266, 355, 1064 nm), laser fluence (1.5-20 J/cm2) and oxygen pressure (1-60 Pa) was studied. The influence of the rf plasma beam addition on the morphological proprieties of zinc oxide films was particularly investigated, simultaneously with several configurations of the direction of the ablation plasma, the rf plasma beam and the substrate. The obtained films, with thicknesses in the range of 50 nm to 1 ?m have been characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM).
In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless-steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger electron spectroscopy during specific in situ thermal cycles. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction. The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed. (13 refs).
This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).
High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub ...
Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.
The half-metallic Heusler alloy Ni{sub 2}MnIn is of high interest for use in spin electronics since at the Ni{sub 2}MnIn/InAs interface a spin polarization of 100% is predicted. We prepare high-quality thin films of 20-60nm thickness by co-evaporation and DC magnetron sputtering. Point-contact Andreev reflection spectroscopy yields a spin polarization of up to 54%. By spectral generalized magneto-optical ellipsometry, the dielectric and magneto-optical properties are determined and ferromagnetic behavior below the Curie temperature T{sub C}=318K is proved.
Focused-ion beam (FIB) milling provides rapid fabrication of individual cylindrical submicrometer channels with reproducible dimensions (#+-#5% diameters) through 8-#mu#m thick poly(methylmethacrylate) (PMMA) films. PMMA films are spincast on sacrificial Si carriers and sputter-coated with Au before the 30-kV gallium FIB milling process. By adding a trace amount of poly(ethyleneoxide) and poly(dimethylsiloxane) to the PMMA solution before casting, the films can be released for subsequent mounting in microfluidic devices to create hybrid microfluidic-nanofluidic multilevel architectures. In situ FIB sectioning demonstrates the smooth cylindrical surface within the pore. Placing a milled film in contact with an aqueous fluorescein solution fills the channel by capillary action, as verified by confocal fluorescence microscopy. Confocal fluorescence of dyed films ...
Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional structure. While NbTe{sub 2} films have been ...
The reduction of oxygen was studied in 0.1 M KCl at 70 deg. C using the rotating disk electrode (RDE) technique on platinum and electrodeposited ZnO thin film electrodes deposited on platinum substrates. In the absence of Zn{sup 2+} ions in solution, a Tafel slope of 139 mV dec{sup -1} was obtained, a value close to that measured on bare platinum electrode (133 mV dec{sup -1}) and ascribed to the limitation of the reaction rate by the first electron transfer. The main difference between the noble metal and the oxide electrode was a shift of the curves towards more negative potentials. In the presence of Zn{sup 2+} ions, the current density decreased significantly and the Tafel slope was measured at 282 mV dec{sup -1} showing that the electrode was partially blocked by zinc oxide formation reaction intermediates.
Amino-rich polymeric coatings are widely used in biomedical applications, since they promote adsorption of diverse biomolecules or facilitate cell growth. As a consequence, there is a growing interest in fabrication of such coatings that is focused predominantly on the optimization of the deposition process in terms of high density of primary amino groups. In addition, the nature of biomedical applications requires also sufficient stability of the films in aqueous environments. This aspect is investigated in this contribution. In particular, the effect of water and phosphate buffer saline on the coatings prepared by RF magnetron sputtering of Nylon 6,6 in Ar/N2 and N2/H2 gas mixtures is evaluated. The samples exposed to liquids are characterized by various diagnostic methods and their prop...
Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.
For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as ...
The ZnO nanorods were used as a template to fabricate nickel nanoclusters by electrodeposition. The ZnO nanorod arrays act as a nano-semiconductor electrode for depositing metallic and magnetic nickel nanoclusters. The growth sites of Ni nanoclusters could be controlled by adjusting the applied potential. Under -1.15 V the Ni nanoclusters could be grown on the tips of ZnO nanorods. On increasing the potential to be more negative the ZnO nanorods were covered by Ni nanoclusters. The magnetic properties of the electrodeposited Ni nanoclusters also evolved with the applied potentials.
The existence of characteristic longitudinal optical and transverse optical phonons of cubic ZnO in ZnO nano-tetrapods is determined by Raman spectroscopy and first-principles calculations. Stacking sequence change at the boundary of the core and legs is also identified by high-resolution transmission electron microscopy. Based on this experimental and theoretical evidence, we demonstrate that the lattice structure of ZnO nano-tetrapods is hierarchical with a zinc blende core connecting to four wurtzite legs. Furthermore, we establish the atomic configuration and propose a formation mechanism induced by Laplace pressure in the initial growth stage of ZnO nano-tetrapods.
In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical ...
New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type ...
A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, ...
In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.
In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.
This paper deals with the characterization of passive films formed on stainless steel (26% Cr and 0 to 3%Mo). The influence of the applied passivation potential and the effect of molybdenum additions to steel upon the composition profiles of passive films formed in an aqueous NaCl solution (3.5% at pH 2.5) are studied. The technique involved is Auger electron spectroscopy combined with ion sputtering. Some electrochemical techniques have been used in conjunction. A quantitative approach of the Auger spectra during the progressive removal of the passive film is described. The peak-to-peak height of the Auger lines are treated in order to yield the atomic fraction of the various elements present in a given subsurface layer. The analytical study of the film by electron spectroscopy indicates that molybdenum plays a part at the metal-oxide interface where this element acts on the ...
Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the possibility to produce submicrometer patterns by selectively modifying ...
Non-evaporable thin film getters of various compositions have been produced by sputtering. Among about 20 materials which have been studied, the lowest activation temperature (about 180 degree C) has been displayed by a Ti-Zr-V coating obtained from a cathode made of intertwisted elemental wires. In order to optimize the vacuum properties of this film various production parameters, including the substrate temperature during coating, have been varied. The films have been characterized by pumping speed measurement, secondary electron microscopy, and X-ray diffraction. It has been found that the substrate coating temperature affects significantly the activation temperature, the pumping speed and the gas surface capacity. The highest pumping speed values, obtained for substrate coating temperatures of 250 degree C and 300 degree C, are clearly correlated with the increased surface roughness and porosity of ...
Nitrogen doped Diamond-like carbon thin films were deposited on n-Si and SiO_2 substrates by rf magnetron sputtering using pure graphite (99.999%) as the target material and mixtures of Ar, N_2 and H_2 for plasma generation. The dependence of structural and optical properties on nitrogen content was investigated using XPS, Raman spectroscopy, FT-IR spectroscopy, and Ellipsometry studies. It was found that as the nitrogen content was increased in the plasma, sp"2 bonding favored. Also it was observed that oxygen contamination increased with nitrogen content. Typical C-H stretching modes connected with diamond-like carbon could be seen in FT-IR spectra. The I_D and I_G bands were well defined and it was observed that as nitrogen content increased I_G band was enhanced. Ellipsometry studies revealed that the optical constants like refractive index (n) and extinction co-efficient (k) increased with increase in nitrogen content as well as substrate ...
Fe_5_0Pt_5_0 nanodots dispersed in a SiO_2 film (Fe_5_0Pt_5_0 nanodot film) were formed by a self-assembled nanodot deposition (SAND) method in which Fe_5_0Pt_5_0 and SiO_2 are cosputtered in a high vacuum rf magnetron sputtering equipment. Fe_5_0Pt_5_0 pellets are laid on a SiO_2 target in a sputtering chamber to form the Fe_5_0Pt_5_0 nanodot film in the SAND method. The size and density of Fe_5_0Pt_5_0 nanodot were controlled by changing the ratio of the total area of Fe_5_0Pt_5_0 pellets to that of SiO_2 target. The Fe_5_0Pt_5_0 nanodot size decreases and its density increases when the ratio decreases. As-deposited Fe_5_0Pt_5_0 nanodots self-assembled to a face-centered-cubic phase of single-crystal structure. The Fe_5_0Pt_5_0 nanodot films were annealed to evaluate the nanodot size controllability, the magnetic anisotropy, and the thermal stability. Fully ...
AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
We have developed efficient spectrally selective infrared (IR) emitters that can be utilized for thermophotovoltaic (TPV) power generation by using stainless steel (SUS304) substrates coated with b- FeSi2 thin films. To develop spectrally selective emitters, we theoretically propose antireflection (AR) coatings consisting of a single layer of a dielectric material having a high refractive index (~5) and are appropriate for use with metals such as stainless steels in the IR region. This type of AR coating is fabricated by sputtering a b- FeSi2 thin film on a polished SUS304 substrate. The reflectance in the IR region is successfully reduced to less than 10%. In addition, the AR properties are stable even at 700 K in air. Therefore, metals with AR coatings of b- FeSi2 can be applied to IR em...
Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and activation of the pumps to ...
Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive ...
The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the ...
Nanoparticle metal oxides offer a wide variety of potential applications in medicine due to the unprecedented advances in nanobiotechnology research. In this work, the effect of zinc oxide (ZnO) nanoparticles prepared by mechano-chemical method on the antibacterial activity of different antibiotics was evaluated using disk diffusion method against Staphylococcus aureus and Escherichia coli. The average size of ZnO nanoparticles was between 20 nm and 45 nm. Although ZnO nanoparticles (500 mg/disk) decreased the antibacterial activity of amoxicillin, penicillin G, and nitrofurantoin in S. aureus, the antibacterial activity of ciprofloxacin increased in the presence of ZnO nanoparticles in both test strains. A total of 27% and 22% increase in inhibition zone areas was observed for ciprofloxac...
Antibacterial activity of Transition metals (Mn, Co) doped ZnO nanopowders prepared by a DC thermal plasma method against Escherichia coli and Staphylococcus aureus are investigated. The phase and morphology studies have been carried out by X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) respectively. All the samples of the present investigation are found to have hexagonal wurtzite structure and crystallite sizes are found to vary from 25nm to 30nm. Our bacteriological study showed the enhanced antibacterial activity of transition metals doped ZnO nanoparticles than undoped ZnO indicating the great potential of ZnO nanoparticles in relevant clinical and biomedical applications.
Polycrystalline ZnO doped with Mn (5 and 10at%) was prepared by the co-precipitation method. The effect of Mn doping on the photocatalytic, antibacterial activities and the influence of doping concentration on structural, optical properties of nanoparticles were studied. Structural and optical properties of the particles elucidated that the Mn2+ ions have substituted the Zn2+ ions without changing the Wurtzite structure of ZnO. The optical spectra showed a blue shift in the absorbance spectrum with increasing dopant concentration. The photocatalytic activities of ZnO powders were evaluated by measuring the degradation of methylene blue (MB) in water under the UV region. It was found that undoped ZnO bleaches MB much faster than manganese doped ZnO upon its exposure to the U...
The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.
An x-ray zone plate was fabricated using the novel approach of focused ion beam (FIB) milling. The FIB technique was developed in recent years, it has been successfully used for transmission electron microscopy (TEM) sample preparation, lithographic mask repair, and failure analysis of semiconductor devices. During FIB milling, material is removed by the physical sputtering action of ion bombardment. The sputter yield is high enough to remove a substantial amount of material, therefore FIB can perform a direct patterning with submicron accuracy. The authors succeeded in fabricating an x-ray phase zone plate using the Micrion 9500HT FIB station, which has a 50 kV Ga{sup +} column. Circular Fresnel zones were milled in a 1.0-{micro}m-thick TaSiN film deposited on a silicon wafer. The outermost zone width of the zone plate is 170 nm at a radius of 60 {micro}m. An achieved aspect ratio was 6:1.
This paper introduces a new method to produce nano-composite powder for the preparation of high performance ZnO varistors. ZnO particles were coated with Bi{sub 2}O{sub 3}, Sb{sub 2}O{sub 3}, Co{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} and other additives via liquid nano-coating technique. Then the prepared powder was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermal gravity and differential scanning calorimetry (TG-DSC) and particle size distribution. The results showed that the ZnO composite powder is homogeneously coated and ultrafine. The densification, phase composition and microstructure of ZnO varistors was studied by linear shrinkage, X-ray diffraction (XRD) and SEM, respectively. The preliminary electrical parameters of ZnO varistors showed that the breakdown voltage V {sub b} (1 mA/cm{sup 2}) and nonlinear coefficient {alpha} is ...
Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively ...
An in-plane uniaxial magnetic anisotropy has been observed in thin Co films normally deposited onto obliquely sputtered Ta and Pt underlayers. Associated with this anisotropy is an augmented easy axis coercivity. The in-plane easy axis is, in most cases, perpendicular to the incident deposition plane. Microstructural results indicate that grains are well connected along the magnetic easy axis but are separated by long continuous voids along the hard axis, which is ascribed to a geometric shadowing effect due to the oblique incidence deposition of the underlayer. Hence, the magnetic anisotropy mimics the film growth anisotropy. It is therefore believed that the observed magnetic properties are due to magnetostatic shape anisotropy effects. In-plane coercivity and anisotropy field are shown to increase with underlayer deposition angle, underlayer thickness and magnetic layer thickness. The choice of capping layer is also ...
Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both ...
The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputteredfilms. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10/sup 0/K temperature wave is applied), performed at two ambient temperatures (80 and 300/sup 0/K), yielding the differential dielectric function. The sputteredfilms included Nb/sub 3/Ge, Nb/sub 3/Al, V/sub 3/Ga and Nb/sub 3/Ir. It is noted that Nb/sub 3/Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V/sub 3/Si, V/sub 3/Ge and single crystal Cr/sub 3/Si were not performed because the samples were not in the form of thin films. The ...
The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputteredfilms. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10_0K temperature wave is applied), performed at two ambient temperatures (80 and 300_0K), yielding the differential dielectric function. The sputteredfilms included Nb"3Ge, Nb"3Al, V"3Ga and Nb"3Ir. It is noted that Nb"3Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V"3Si, V"3Ge and single crystal Cr"3Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the ...
The adsorption of glycolate anions at sputtered gold thin-film electrodes was studied in perchloric acid solutions by cyclic voltammetry experiments combined with in situ Surface Enhanced Raman Scattering (SERS) and Surface Enhanced Infrared Reflection Absorption Spectroscopy under attenuated total reflection conditions (ATR-SEIRAS). Theoretical harmonic vibrational frequencies and band intensities obtained from B3LYP/LANL2DZ,6-31+G(d) calculations for glycolate species adsorbed on Au clusters with (1 1 1) orientation were used to interpret the experimental spectra. Vibrational data confirm the bidentate bonding of glycolate anions through the oxygen atoms of the carboxylate group, in a bridge configuration with the OCO plane perpendicular to the metal surface. The DFT calculations show no significant effect of the total charge of the metal cluster-adsorbate adduct on the vibrational frequencies of adsorbed glycolate species. The infrared ...
Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various TiC-TiB{sub 2} targets in Ar+N{sub 2} ...
Creation of new multi-composite materials is an essential issue to attain an innovative improvement of the current nuclear technology. In this paper, some highlights are focused on the research of creation of those materials and the relating subjects in NIRIM. (1) The KOH corrosion test method are expected to be efficiently available in the limited cases instead of Na corrosion test one. (2) The preliminary creation of the multi-composite ceramics were achieved by Y- ion implantation into sapphire and the RF sputtering, of which the specified orientation was realized by the existence of the buffer layer. The importance of the defect control are described with the relation to the corrosion resistance improvement. (3) The ion beam induced phenomena have been investigated on the surface change of silica glass and the crystallization of Cu film on SrTiO{sub 3}. (4) The electronic states of the alkali-metal adsorbed surfaces and that of the ...
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
Rare-earth oxides are doped into ZnO varistors as grain growth inhibitors for increasing the varistors' voltage gradients. However, their leakage currents become large and their nonlinear coefficients decrease at the same time. The reasonable explanation for such a phenomenon has not yet been available. In this paper, the temperature dependences of varistor samples' leakage currents are investigated, which reveal that the increased leakage currents of ZnO varistors with Y2O3 doping are mainly due to the bypass paths through the intergranular materials at grain corners.
A numerical and experimental investigation is carried out in a solar thermochemical reactor for the thermal dissociation of ZnO at 2000 K using concentrated solar energy. The reactor consists of a cavity-receiver lined with ZnO particles and directly exposed to high-flux irradiation. A transient heat transfer model is formulated to link the rate of radiation, convection, and conduction heat transfer to the reaction kinetics. The radiosity and Monte Carlo methods are applied to obtain the distribution of net radiative fluxes at the internal surfaces of the reactor cavity and at the surface of the ZnO bed. Validation is accomplished in terms of the calculated and measured transient temperature profiles and chemical reaction rates.
This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer ...
The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...
Aiming to realize ball bearings operable in a vacuum and under high temperature, silicon nitride (Si3N4) ceramic ball bearings were tested. The tested ball bearings were angular contact ball bearings composed of silicon nitride with sputtered molybdenum disulfide coating using a retainer of hot-pressed self-lubricating composite material. The time variation of the frictional torque was examined for the operations under the conditions at 500{degree}C in a vacuum at a rotational speed of 600 rpm and 50N thrust load for 5{times}10{sup 7}revolutions (1400 hours) and for 1.5{times}10{sup 8}revolutions (4200 hours). Excellent tribological performance was obtained. The ball bearings are lubricated with the molybdenum disulfide film at the initial stage of the operation and with a transfer film formed from the retainer material to the balls. In a test at 650{degree}C, low and stable frictional torque was observed up to 500 hours of ...
Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail ...
Chromium containing amorphous hydrogenated carbon films (a-C : H/Cr) have been prepared by simultaneous rf plasma activated chemical vapour deposition of methane and magnetron sputtering of a chromium target. During deposition the substrates were heated (up to 300C) and DC biased (-200 and -600 V) in order to obtain films with high chemical stability. Constant temperature tests were performed at 250C in air with coatings deposited on silicon substrates. The degradation of the coatings was monitored by Raman spectroscopy and reflectance and transmission measurements. The main degradation mechanisms are discussed and the relevant parameters which improve the durability of the coatings are presented. Furthermore, the durability of solar selective, multilayered coatings which were deposited on copper sheets was investigated. Based on accelerated aging tests at different temperature loads in air (at 220C, 250C and 300C) and in a ...
Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si{sup + +} FIB also indicated the possibility to ...
A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done on (i) ion-implanted ...
Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H{sub 2}SO{sub 4}). Alloys with two nitrogen doses have been prepared (2.5x10{sup 16} and 2x10{sup 17} N atoms/cm{sup 2}). The implanted alloys have been characterized by {sup 15}N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic ...
Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic dissolution in the active state ...
Complimentary spectroscopic, microscopic and electrochemical studies were performed to characterise the barrier properties as well as the interface structure of model iron substrates covered with thin plasma polymer films. Cathodic plasma polymers were deposited which show high barrier properties. The metal surface was pre-treated by a reducing or oxidising plasma. This allowed the adjustment of the oxidation state of the interface layer. The interface structure was characterised by means of X-ray photoelectron sputter profiles, infrared spectroscopy and the application of a Kelvin probe. The investigations show that the measured Voltapotential on the plasma polymer surface can be correlated with the oxidation state of the interface. Reducing plasmas lead to an almost oxide free surface. After deposition of the plasma polymer, this reduced state of the oxide is sensitive to re-oxidation of the interface by oxygen that diffuses through the ...
Shell Solar GmbH is working on a variant of the so-called stacked elemental layer process for CIGSSe absorber production. The metal films resp. the selenium are deposited on the Mb electrode at room temperature by DC sputtering (CIG) or evaporation (Se) and then processed into semiconductors by rapid thermal annealing (RTP). Currently, the mean efficiency of the pilot plant is i 12.6 {+-} 0.2 % for non-sealed 30 x 30 cm{sup 2} modules, the key efficiency is 13.0 %. In addition to the 30 x 30 cm{sup 2} pilot line, a small series of 60x90cm2 modules was constructed in December 2004. Here, the mean efficiency was 13.0 percent while the average module power was higher than 60 W. The contribution also describes investigations of ceramically sputtered n-ZnO:Al layers with reduced Al concedntrations of 1 percent and on reactively sputtered n-ZnO.Al layers from the double roller magnetron. (orig.) [German] Bei ...
There is presently considerable interest in wear resistant coatings produced using closed field unbalanced magnetron sputtering technology. For example, layered films of diamond-like carbon (DLC) with tungsten or titanium additions have been widely reported. The benefit is that the mechanical properties are enhanced (e.g. giving greater toughness); also it is possible to control the stress state and enhance adhesion. Here we report the further development of this concept by the addition of TiN, TiCN and TiC layers in DLC-based composites, utilizing an additional source of electrons in the vicinity of substrate to enhance ionisation of the plasma and increase coating density. Composite coatings of ceramics TiN, TiC{sub x}N{sub y}, TiC, CrN, TiCrN, TiCrCN, TiCrC, metal doped Ti{sub x%}-DLC and their combinations were deposited on 316 stainless steel substrates. The mass flow of reactive gases into the chamber was controlled using plasma optical ...
Beside traditional applications of refractory metals, e.g. in high temperature furnace construction, lighting or glass industry, one of the most important molybdenum products nowadays are large plates which are frequently used as targets for the sputtering of molybdenum layers in thin-film transistor liquid crystal displays. For the hot rolling of the sintered pre-material, the control over the recovery and recrystallization behavior is of particular importance. Molybdenum tends to a very recovery controlled behavior during hot deformation, at which the dislocations arrange into subcell boundaries instantaneously. These pronounced recovery processes seem to consume a large amount of the stored deformation energy for the actual recrystallization. On the other hand, recovery provides the future recrystallization nuclei. For a comprehensive characterization of these microstructural processes, electron microscopy appears to be the most proper ...
Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering spectra (RBS) showing the oxide film and ...
Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the nitrided substrate as shown by the Rockwell and scratch tests. The adhesion of the ...
There has been considerable interest in producing and studying nanoparticle materials because of the effect of size on their structure, physical and chemical structure. Most studied nanoparticle semiconductors belong to the II-VI group, as they are relatively easy to synthesize and are generally prepared as particulates or in thin film form. Among II-VI compounds, CdS is one of the most studied materials. There are different ways to synthesize CdS nanoparticles such as colloidal particles, chemical decomposition, sol-gel, gas evaporation, magnetron sputtering, electrostatic deposition, and etc. {gamma}-irradiation is one of the effective methods for synthesis of nanomaterials. These nonomaterials have been extensively used in the preparation of nanocrystalline metals, metal oxides, and metal-polymer composites. However, The preparation of CdS nanoparticle and CdS/ polyacrylonitrile nanocomposite by {gamma}-irradiation method at room temperature ...
By means of ab-initio electronic structure calculation and one-dimensional Boltzmann transport equation solution, we investigate the size dependent thermoelectric (TE) properties of n-type ZnO nanowires (NWs) and surface passivation effects. As demonstrated by our calculations, largest figure of merit ZT achievable in thin NWs is larger than that in wide NWs, whereas being restrained by higher demand of n-type doping. Moreover, bare NWs are superior in TE application comparing with the passivated. To compete with conventional TE materials, lattice thermal conductivity of ZnO NWs should be at least 2 orders of magnitude lower than bulk value.
AbstractBackground In recent years nano-metaloxides which easily penetrate into the cells with special interest due to their higher chemical reactivity as compared to that of similar materials in the bulk form. Of particular interest are nano-TiO2 and ZnO, which have been widely used for their bactericidal and anticancerous properties. Purpose The aim of the present study was to examine the bactericidal properties of nano-TiO2 and ZnO combined with visible light on S. aureus and S. epidermitis, known for their high prevalence in infected wounds. Study Using the technique of electron-spin resonance (ESR) coupled with spin trapping, we examined the ability of TiO2 and ZnO nanoparticle suspensions in water to produce reactive oxygen species (ROS) with and without visible light irradiation. Th...
Glasses in the system (1 - x) [29Na2O- 4Al2O3- 67B2O3]- xZnO (0 ? x ? 35 mol%), have been prepared by the melt quenching technique. Elastic properties, X-ray and FT-IR spectroscopic studies have been employed to study the role of ZnO on the structure of the investigated glass system. Elastic properties and Debye temperature have been investigated using sound wave velocity measurements at 4 MHz at room temperature. The results showed that the density increases and the molar volume decreases while both sound velocities and the determined glass transition temperatures decrease with increase in x. X-ray and infrared spectra of the glasses reveal that the borate network consists of diborate units and is affected by the increase in the concentration of ZnO content. These results are interpreted in terms of the decrease in the N4 values (fraction of tetrahedral coordinated boron atoms), and substitution of longer bond lengths of ...
X-ray fluorescence analysis was used to determine the zinc content of the ''Perilacin'' powder and the ZnO content of the ''Epiderman-pix'' powder. The characteristic Ksub(#alpha#) line of zinc was excited using a "1"4"7Pm/Mo source (10"7 s"-"1) and the molybdenum Ksub(#alpha#) line (17.47 keV). 4 to 5% Zn and 45 to 49% ZnO were determined with a NaI(Tl) scintillation detector. The radiation intensity was found to decrease with particle size. (M.K.).
The electrode structure of an inverted cesium sputtering negative ion source has been modified to produce a convergent Cs/sup +/ beam. The intensities of negative ion beams produced with this electrode structure are approximately an order of magnitude greater than previously obtained.
Swift heavy ion-solid interaction leads in volume to track creation and on the surface to the ejection of particles into the vacuum. To learn more about initial mechanisms of track formation, we are focused on the sputtering of uranium dioxide by fast heavy ions. This present study is exclusively devoted to the influence of the electronic stopping power on the emission of neutral particles and especially on their angular distribution. These measurements are completed by those of the ions emitted from UO{sub 2} targets bombarded with swift heavy ions. The whole experimental results give access to: i) the nature of the sputtered particles; ii) the charge state of the emitted particles; iii) the direction of ejection of the sputtered particles ; iv) the sputtering yields deduced from the angular distributions. These results are compared to the prediction of the sputtering models ...
The preparation by sputtering of artificial metallic superlattices is described, as are the results of x-ray structural determinations. Tunneling and resistivity measurements on these materials are reported.
The main physical processes allowing negative ion production by surface sputtering for further acceleration in tandem acceleration are briefly reviewed. The sputtering yield and the probability of negative ion ejection are discussed. The properties of negative ion beams for an efficient acceleration in tandem accelerators are also discussed, with an emphasis on space charge problems. The main features and performances of the heavy negative ion injector of the Bucharest tandem accelerator are given.
Growth of Ru- and RuO_2-composite (ROC) nanodots on atomic-layer-deposited Al_2O_3 film has been studied for the first time using ion-beam sputtering followed by post-deposition annealing (PDA). X-ray photoelectron spectroscopy analyses reveal that RuO_2 and Ru co-exist before annealing, and around 10% RuO_2 is reduced to metallic Ru after PDA at 900 deg. C for 15 s. Scanning electron microscopy measurements show that well-defined spherical ROC nanodots are not formed till the PDA temperature is raised to 900 deg. C. The mean diameter of the nanodots enlarges with increasing PDA temperature whereas the nanodot density decreases, which is attributed to coalescence process between adjacent nanodots. It is further illustrated that the resulting nanodot size and density are weakly dependent on the annealing time, but are markedly influenced by the decomposition of RuO_2. In this article, the ROC nanodots with a high density of 1.6 x 10"1"1 cm"-"2, ...
Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of {theta}{sub 0} is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of {theta}{sub 0} for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.
Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of #theta#_0 is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of #theta#_0 for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.
Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in small increments and ...
Solar syngas production from CO"2 and H"2O is considered in a two-step thermochemical cycle via Zn/ZnO redox reactions, encompassing: 1) the ZnO thermolysis to Zn and O"2 using concentrated solar radiation as the source of process heat, and 2) Zn reacting with mixtures of H"2O and CO"2 yielding high-quality syngas (mainly H"2 and CO) and ZnO; the ZnO is recycled to the first, solar step, resulting in net reaction @bCO"2 + (1 - @b)H"2O -> @bCO + (1 - @b)H"2. Syngas is further processed to liquid hydrocarbon fuels via Fischer-Tropsch or other catalytic processes. Second-law thermodynamic analysis is applied to determine the cycle efficiencies attainable with and without heat recuperation for varying molar fractions of CO"2:H"2O and solar reactor temperatures in the range 1900-2300 K. Conside...
Composite ZnO/Ag nanoparticles have been formed via the photocatalytic reduction of silver nitrate over the ZnO nanocrystals, their optical, electrophysical and photochemical properties have been investigated. Mie theory has been applied to analyze the structure of the absorption spectra of ZnO/Ag nanocomposite. The irradiation effects upon the optical properties of ZnO/Ag nanostructure have been investigated. It has been found that the irradiation of ZnO/Ag nanoparticles results in electrons accumulation by both the semiconductor and the metallic components of the nanocomposite. It has been found that silver nitrate can be photochemically deposited onto the surface of ZnO nanoparticles under the illumination with the visible light in the presence of the sensitizer - methylene blue. Kinetics of the sensitized Ag(I) photoredution has been studied. It has been concluded that the key stage of this process is the electron injection from ...
The aim of our research was to identify structures and chemical compositions of phases formed during internal oxidation of multi-component Ag-Zn-Mg-based alloys. Since the ability of inoculation mostly depends on large free energy of formation of oxides of microalloying elements and their crystallographic similarity, Mg in quantities of 0.001-0.5 mass% was selected as a micro-alloying element. These correspond to the quantities of 0.005-2.5 vol.% of MgO in the selected Ag-Zn-based alloys. Ag-based metal matrix, heterogeneous nuclei of MgO and oxide (ZnO) of the main alloying element were analysed by transmission electron microscopy (TEM). Structural inter-connections among them were also investigated and analysed. In situ phenomenon of heterogeneous nucleation of MgO and ZnO was proved. (orig.)
The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr{sup -}and 20 nA for SrO{sup -}. (orig.).
The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr"-and 20 nA for SrO"-. (orig.).
Average emittance data for ion beams extracted from cesium-sputter negative ion sources equipped with spherical, ellipsoidal, and cylindrical geometry cesium-surface ionizers are presented. The attributes of the respective source geometries are described in terms of their cesium ion optical properties. The results of recent measurement of the emittances of momentum-analyzed beams extracted from the ellipsoidal geometry source are also presented. These measurements indicate the presence of a species-dependent effect. The effect is believed to be attributable to differences in the energy spreads of the respective negative ion beams introduced by the sputter generation process.
Average emittance data for ion beams extracted from cesium-sputter negative ion sources equipped with spherical, ellipsoidal, and cylindrical geometry cesium-surface ionizers are presented. The attributes of the respective source geometries are described in terms of their cesium ion optical properties. The results of recent measurement of the emittances of momentum-analyzed beams extracted from the ellipsoidal geometry source are also presented. These measurements indicate the presence of a species-dependent effect. The effect is believed to be attributable to differences in the energy spreads of the respective negative ion beams introduced by the sputter generation process. 11 refs., 8 figs.
The thermal stability of low-friction Me-C/a-C:H coatings is important for their potential applications in the tool and automotive industry. Recently we showed that CrC _x/a-C:H coatings prepared by unbalanced magnetron sputtering of a Cr target in Ar + CH_4 glow discharges exhibit a nanocomposite structure where metastable fcc CrC nanocrystals are encapsulated by an a-C:H phase. Here, we present the structural evolution of these nanocomposite CrC/a-C:H coatings during annealing. High-temperature X-ray diffraction in vacuum and differential scanning calorimetry (DSC) combined with thermo-gravimetric analysis in Ar atmosphere indicate decomposition of the formed metastable fcc CrC phase and subsequent formation of Cr_3C_2 and Cr_7C_3 and structural transformation of the a-C:H matrix phase towards higher sp"2 bonding contents at temperatures above 450 deg. C. Combined DSC and mass spectrometer analysis as well as elemental profiling after annealing in vacuum by ...
Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of ...
Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is considered. Between CIGSSe ...
In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The ...
This report is the 1992 annual progress report for the Energy Conversion and Storage Program, a part of the Energy and Environment Division of the Lawrence Berkeley Laboratory. Work described falls into three broad areas: electrochemistry; chemical applications; and materials applications. The Energy Conversion and Storage Program applies principles of chemistry and materials science to solve problems in several areas: (1) production of new synthetic fuels, (2) development of high-performance rechargeable batteries and fuel cells, (3) development of advanced thermochemical processes for energy conversion, (4) characterization of complex chemical processes and chemical species, and (5) study and application of novel materials for energy conversion and transmission. Projects focus on transport-process principles, chemical kinetics, thermodynamics, separation processes, organic and physical chemistry, novel materials, and advanced methods of analysis. Electrochemistry research aims to ...
The Energy Conversion and Storage Program applies chemistry and materials science principles to solve problems in (1) production of new synthetic fuels, (2) development of high-performance rechargeable batteries and fuel cells, (3) development of advanced thermochemical processes for energy conversion, (4) characterization of complex chemical processes, and (5) application of novel materials for energy conversion and transmission. Projects focus on transport-process principles, chemical kinetics, thermodynamics, separation processes, organic and physical chemistry, novel materials, and advanced methods of analysis. Electrochemistry research aims to develop advanced power systems for electric vehicle and stationary energy storage applications. Topics include identification of new electrochemical couples for advanced rechargeable batteries, improvements in battery and fuel-cell materials, and the establishment of engineering principles applicable to electrochemical energy storage and ...
The Energy Conversion and Storage Program applies chemistry and materials science principles to solve problems in (1) production of new synthetic fuels, (2) development of high-performance rechargeable batteries and fuel cells, (3) development of advanced thermochemical processes for energy conversion, (4) characterization of complex chemical processes, and (5) application of novel materials for energy conversion and transmission. Projects focus on transport-process principles, chemical kinetics, thermodynamics, separation processes, organic and physical chemistry, novel materials, and advanced methods of analysis. Electrochemistry research aims to develop advanced power systems for electric vehicle and stationary energy storage applications. Topics include identification of new electrochemical couples for advanced rechargeable batteries, improvements in battery and fuel-cell materials, and the establishment of engineering principles applicable to electrochemical energy storage and ...
Herpes simplex virus type-1 (HSV-1) entry into target cell is initiated by the ionic interactions between positively charged viral envelop glycoproteins and a negatively charged cell surface heparan sulfate (HS). This first step involves the induction of HS-rich filopodia-like structures on the cell surface that facilitate viral transport during cell entry. Targeting this initial first step in HSV-1 pathogenesis, we generated different zinc oxide (ZnO) micro-nano structures (MNSs) that were capped with multiple nanoscopic spikes mimicking cell induced filopodia. These MNSs were predicted to target the virus to compete for its binding to cellular HS through their partially negatively charged oxygen vacancies on their nanoscopic spikes, to affect viral entry and subsequent spread. Our results demonstrate that the partially negatively charged ZnO-MNSs efficiently trap the virions via a novel virostatic mechanism rendering them unable to enter into human corneal ...
Zinc oxide (ZnO) and alumina (Al2O3) particles are synthesized by the combustion of their volatilized acetylacetonate precursors in a premixed air-methane flame reactor. The particles are characterized by XRD, transmission electron microscopy, scanning mobility particle sizing and by measurement of the BET specific surface area. Pure (?-)alumina particles appear as dendritic aggregates with average mobile diameter 43-93 nm consisting of partly sintered, crystalline primary particles with diameter 7.1-8.8 nm and specific surface area 184-229 m2/g. Pure zinc oxide yields compact, crystalline particles with diameter 25-40 nm and specific surface area 27-43 m2/g. The crystallite size for both oxides, estimated from the XRD line broadening, is comparable to or slightly smaller than the primary particle diameter. The specific surface area increases and the primary particle size decreases with a decreasing flame temperature and a decreasing precursor vapour pressure. The ...
A radiometric method was elaborated for surface density determinations of the adhesive layer of plasters by radionuclide X-ray fluorescence using the 17.47 keV bremsstrahlung of "1"4"7Pm/Mo. The bremsstrahlung line excites the 8.63 keV characteristic K#alpha# line of Zn contained in the adhesive layer of the plaster as a filling material in the form of ZnO. In homogeneous adhesive layers the Zn content is proportional to surface density. (author).
Glasses in the system (1 - x) [29Na{sub 2}O- 4Al{sub 2}O{sub 3}- 67B{sub 2}O{sub 3}]- xZnO (0 {<=} x {<=} 35 mol%), have been prepared by the melt quenching technique. Elastic properties, X-ray and FT-IR spectroscopic studies have been employed to study the role of ZnO on the structure of the investigated glass system. Elastic properties and Debye temperature have been investigated using sound wave velocity measurements at 4 MHz at room temperature. The results showed that the density increases and the molar volume decreases while both sound velocities and the determined glass transition temperatures decrease with increase in x. X-ray and infrared spectra of the glasses reveal that the borate network consists of diborate units and is affected by the increase in the concentration of ZnO content. These results are interpreted in terms of the decrease in the N{sub 4} values (fraction of tetrahedral coordinated boron atoms), and ...
The pitting resistance of Fe-Cr and Fe-Cr-Mo alloys has been correlated with characteristics of the passive films analyzed by Auger electron spectroscopy (AES). Increased film protectiveness as a result of increased Cr in the alloy can be directly attributed to Cr enrichment of the film and decreased film thickness. Increased Mo in the alloy or passivation at noble potentials promotes passive film resistance to breakdown, but neither does much to change the macrocharacteristics of the film. Rather, it is suggested that the roles of alloying and/or passivation conditions are related to the susceptibility and distribution of weak points of the film. In solutions in which pitting occurs, chloride is generally not incorporated into the film, suggesting that the role of halides is to interact with weak points of the ...
The Sputter coefficient of accelerated CO{sub 2} cluster ions hitting surfaces of various materials is investigated. For copper it varies proportional to the 2nd power of the energy between 155 and 260 keV. The rate of erosion for different target materials varies by two orders of magnitude from tungsten to PMMA. Diamond is eroded fairly quickly, while aluminum is eroded less than corundum (Al{sub 2}O{sub 3}). No simple correlation of the sputter coefficient on the bulk material properties is found. For copper the angular distribution of sputtered material is measured and found to be following roughly a cosine distribution. By using masks different microstructures have been produced in cobalt-samarium magnets, diamond and glass. (orig.)
We report experimental evidence of a previously unseen species-dependent effect in the transverse emittances of momentum-analyzed {sup 28}Si{sup {minus}}, {sup 58}Ni{sup {minus}}, and {sup 197}Au{sup {minus}} negative-ion beams generated by cesium-ion sputtering. The differences in the emittances are found to be principally correlated with differences in the energy spreads in the respective ion beams, which have their origins in the sputter-ejection negative-ion formation process. The experimental equipment and techniques utilized for emittance data acquisition and analysis, and evidence for a species-dependent effect in the emittances and brightnesses of the subject ion beams, are presented in this paper.
ObjectivesWe have developed a life cycle perspective inspired conceptual model (CM) that suggests the importance of terrestrial ecosystems as a major repository of ZnO, TiO2, and Ag (Tier 1) manufactured nanomaterials (MNMs) introduced via the land application of MNM-containing biosolids. We propose to investigate the transport, fate, behavior, bioavailability, and effects of MNMs in(to) agroecosystems under environmentally realistic scenarios organized around three key hypotheses: Hypothesis (H1) Surface [continued...]DescriptionWe have developed a life cycle perspective inspired conceptual model (CM) that suggests the importance of terrestrial ecosystems as a major repository of ZnO, TiO2, and Ag (Tier 1) manufactured nanomaterials (MNMs) introduced via the land application of MNM-containing biosolids. We propose to investigate the transport, fate, behavior, bioavailability, and effects of MNMs in(to) agroecosystems under environmentally ...
The profile imaging technique is used to study the oxidation of ZnTe and InP surfaces induced by in situ reaction due to the electron beam of the microscope and by ex situ heating in air. For both materials, in situ reaction with the electron beam resulted in desorption of the anion species and the formation of the metal oxide. The observation of In metal particles, and the fact that the rate of formation of In_2O_3 was substantially reduced by an improvement of the vacuum near the specimen region, suggested that the presence of oxygen is not involved in the desorption process. The ex situ heating of ZnTe up to 260 degrees C in air resulted in crystals of ZnO and Te metal, generally in a layered surface region with the sequence of ZnTe/Te/ZnO. The large Te crystals usually had an epitaxial relationship with the bulk ZnTe but the small ZnO crystals had random orientations. The ex situ heating of InP to 380 degrees C in air only gave rise to ...
The technical feasibility of the solar carbothermal reduction of ZnO has been successfully demonstrated in a pilot plant. The economics of this process is addressed by means of a single sensitivity analysis and a Monte-Carlo risk analysis. A medium-term and a long-term scenario have been investigated, each for a 5 and a 30 MW{sub th} plant. For a discount rate of 15% the zinc production costs vary between 482 and 245 $/t for the medium-term scenario and between 312 and 146 $/t for the long-term scenario, respectively. These costs do not account for the zinc oxide input material. In addition, a risk analysis was conducted for the 30 MW{sub th} long-term scenario. For each input parameter, a probability distribution was estimated and the probability distribution of the zinc production cost was calculated by means of a Monte-Carlo method. The expected mean zinc production costs vary from 95 $/t for a discount rate of 0%-286 $/t for a discount rate of 40%. (author)
The addition of ZnO, depleted in the Zn-64 isotope, to the water of boiling water nuclear reactors lessens the accumulation of Co-60 on the reactor interior surfaces, reduces radioactive wastes and increases the reactor service-life because of the inhibitory action of zinc on inter-granular stress corrosion cracking. To the same effect depleted zinc in the form of acetate dihydrate is used in pressurized water reactors. Gas centrifuge isotope separation method is applied for production of depleted zinc on the industrial scale. More than 20 years of depleted zinc application history demonstrates its benefits for reduction of NPP personnel radiation exposure and combating construction materials corrosion.
A multicusp magnetic field plasma surface ion source, normally used for H/sup -/ ion beam formation, has been utilized for the generation of high intensity, pulsed, heavy negative ion beams suitable for a variety of uses including tandem electrostatic accelerator/synchrotron injection applications. Sputter probe voltage limited total ion currents of 5.5, 8.2, 5.1 and 4.5 mA (peak intensity) have been produced from Au, Cu, Ni and CuO sputter probes, respectively. The mass distributions of these ion beams are found to be dominated by Au/sup -/, Cu/sup -/, Ni/sup -/ and O/sup -/ atomic species, respectively. The source offers the interesting prospect of providing cw negative ion beams at mA intensity levels of the commonly used semiconducting material dopants (e.g. B/sup -/, P/sup -/, As/sup -/ and Sb/sup -/) as well as O/sup -/ for isolation barrier formation. Illustrative examples of intensity versus time and the mass distribution of ion beams ...
The variation in the superconducting properties of various binary alloys of transition metal-germanium systems was surveyed by studying sputter deposited samples prepared under various conditions. The primary interest has been to study the formation of the stoichiometric A-15 compounds T_3Ge.
Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion implanter chamber greatly reduces the amount of carbon impurity on the surface of ...
Polyacrylonitrile films have been spin cast and pyrolyzed to produce thin (500--1500 A) carbon films. These films have higher electrical conductivities than films produced by other methods at similar temperatures. The conductivity can be varied by at least four orders of magnitude by changing the pyrolysis temperature. Ultraviolet, infrared, and Raman spectroscopies were used to investigate the chemical structure of the films during different stages of processing.
We report experimental evidence of a previously unseen species-dependent effect in the transverse emittances of momentum analysed /sup 28/Si/sup -/, /sup 58/Ni/sup -/ and /sup 197/Au/sup -/ ion beams generated by caesium ion sputtering. The high-resolution emittance measurement techniques employed in this work have enabled us to estimate the energy spreads of these ion beams; differences in the widths of the energy distributions are the origin of the observed differences in emittances of the ion beams investigated. (author).
Two sources of negative ions are described. An rf source produces up to 14 ..mu..A beams of He/sup -/ by charge exchange in Rb vapor. The other Source of Negative Ions by Cesium Sputtering (SNICS) produces a wide variety of negative ion beams in the ..mu..A range. Two important features of SNICS are its simple, compact construction and its very good beam emittance (2 to 4..pi..mm mrad MeV/sup 1/2/). Both sources have lifetimes >200 hours and they are used extensively on the Wisconsin EN tandem.
Surface probe and laser-induced fluorescence measurements in ISX-B and EBT-S have made significant contributions to the understanding of plasma edge characteristics and plasma-surface interactions in these devices. Where comparison is possible, these techniques have led to results which are consistent with plasma diagnostics. Charge-exchange neutral sputtering and self-ion sputtering have been identified as the dominent heavy impurity release mechanisms in ISX-B and EBT-S, respectively.
To improve mirrors coating, we have modeled sputtering of binary oxide targets using TRIM code. First, we have proposed a method to calculate TRIM input parameters using on the one hand thermodynamic cycle and on the other hand Malherbe`s results. Secondly, an iterative processing has provided for oxide steady targets caused by ionic bombardment. Thirdly, we have exposed a model to get experimental sputtering yields. Fourthly, for (Ar - SiO{sub 2}) pair, we have determined that steady target is a silica one. A good agreement between simulated and experimental yields versus ion incident angle has been found. For (Ar - Ta{sub 2} O{sub 5}) pair, we have to introduce preferential sputtering concept to explain discrepancy between simulation and experiment. In this case, steady target is tantalum monoxide. For (Ar - Ta+O{sub 2}) pair, tantalum sputtered by argon ions in reactive oxygen atmosphere, we have to ...
YBa_2Cu_3O_7_-_x thick films have been deposited on silver sheets and MgO single crystals by spray pyrolysis. Film texture is related to film thickness and sintering temperature. The X-ray intensity ratio of the 005 peak to the 110 peak is higher for thin films deposited at the higher temperatures. However, elevated temperatures promote copper diffusion and second-phase formation in films deposited on silver. Films deposited on MgO can have larger grain sizes and are more oriented than those deposited on silver.
The optical pressure exerted o a thin film, which is locked in the evanescent field formed at the plane interface with a totally-reflected Gaussian beam, is investigated. Some calculations of the pressure on the film caused by the evanescent field are presented in the different conditions of film thickness, film position, incident angle and polarization of a gaussian beam. The results show that the pressure exertion on the thin film can change from pushing to pulling as the parameters are varied. In particular, we find that the direction of optical pressure can act oppositely at the different positions of the film surface in the evanescent field.
The kinetics of passive film formation on iron in borate buffer solution has been studied at different anodic potentials. The process of film growth has been found to occur in four distinct stages. About 80-90% of the total film thickness formed in 1h grows during the initial two stages which last for only 1-3s (depending upon potential). The electric field strength across the film is not constant but decreases with progressing film growth. The thickness of the film determined ellipsometrically is less than that calculated from the electric charge consumed. The process of anodic film formation is accompanied by the dissolution of iron which occurs over the whole range of potentials.
A super-hydrophobic coating was prepared by combining a rigid base film with crater-like hemispherical holes and acicular nanoparticles. The acicular boehmite powder provides a high contact angle on the film surface. The rigid base film with crater-like hemispherical holes inhibits the rapid decrease of contact angle by surface rubbing. The combination of different roughness is an effective method for improving the abrasion resistance of super-hydrophobic films.
The K 2010 exhibition saw the introduction of PolyOne Corps OnCap Antifog Additive for polypropylene (PP) films, the first such additive for PP films that does not require corona treatment. According to the company, this new additive simplifies production of antifog films for the flexible food packaging industry, improving production efficiencies for both cast and blown film producers.
By means of ESCA the composition and the thickness of passive films formed on austenitic stainless steels were investigated after the attack of nitric acid at various temperatures and acid concentrations. The outermost layers of the oxide film consist of SiO_2, then a layer rich of Cr-oxid follows, containing also some Mo in the four- and sixvalent state. Ni does not contribute to the oxide film. Cr is also enriched in the metal just below the oxide film. (orig.).
This work analyzes the unoptimized prototype triode-sputtered, 150 microns thick tantalum coatings deposited with a 2.5 microns niobium underlayer on the bore of a large-diameter A723 steel cylinder. The coating was deposited for wear and erosion protection by Pacific Northwest National Laboratory. The phase determination was based on X ray diffraction analysis, wavelength dispersive X ray fluorescence analysis, energy dispersive X ray analysis, and hardness and electrical resistivity measurements. Both X ray diffraction and radius-of- curvature methods were used to determine residual stresses. A locally developed high-resolution pole figure technique was used to perform texture analysis. The post-firing, debonded coating showed alpha-tantalum, preferred 110 orientation, high surface stresses, tantalum oxides, entrapped krypton sputtering gas, interstitial oxygen, and other impurities. The surface and subsurface pole figures revealed broadened ...
Recently developed oxygen O18 method [K. Franzreb, J. Lorincik, P. Williams, Surf. Sci. 573 (2004) 291; R.C. Sobers, K. Franzreb, P. Williams, Appl. Surf. Sci. 231-232 (2004) 729; P. Williams, R.C. Sobers Jr., K. Franzreb, J. Lorincik, Appl. Surf. Sci. 252 (2006) 6429] is able to quantitatively determine the flux ratio of oxygen to matrix species at dynamical SIMS sputtering. This flux ratio can be directly related to the surface oxygen concentration at dynamical sputtering - an important parameter controlling the ionization yield of emitted species. It is argued that the oxygen O18 method is a worthy step forward in gathering relevant experimental data that might eventually lead to the understanding of oxygen enhancement mechanism in SIMS. A current status of understanding of the ionization processes in SIMS is briefly discussed in terms of non-adiabatic strongly velocity dependent processes represented by the electron tunneling and ...
Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.
A single plasma process involving three consecutive steps has been developed for producing high gas flow catalytic nanostructures on the electrodes of proton exchange membrane (PEM) fuel cells (FC). Using a high density helicon radio frequency (13.56 MHz) plasma, nickel is sputtered onto a porous carbon support. Changing the background gas from argon to methane/hydrogen allowed 2 ?m long, 37 nm diameter carbon nanofibres (CNFs) to be grown by diffusion through the nickel clusters in a 'tip growth' mechanism at the relatively low temperature of 400 deg. C. The third step involves plasma sputtering of platinum onto the CNFs, resulting in nanoclusters (3-8 nm) being formed on the periphery of the CNFs. Four FC cathodes were synthesized on carbon paper and PTFE/carbon loaded cloth (known as gas diffusion layer, GDL), both with and without CNFs, with the Pt/CNFs nanostructures grown on PTFE/carbon loaded cloth having the best FC performances. ...
In this paper, multilayer oxide nanorods were deposited in the nanopores of anodic aluminum oxide (AAO) via solution infiltration followed by heat treatment. The nanorods have a core-shell structure. First, the shell (nanotube) with the thickness of about 40nm was made of TiO"2 through the hydrolysis of (NH"4)"2TiF"6. Second, silver nanoparticles with the diameter of about 3nm were added into the TiO"2 layer through thermal decomposition of AgNO"3 at elevated temperatures. Then, cylindrical cores (nanorods) of CoO and ZnO with 200nm diameter were prepared, respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the structure and composition of the nanorods. UV-vis light absorption measurements in the wavelength range from 350 to...
Abstract in english Structural characterisations using the SAXS technique in a number of nanoheterogeneous materials and liquid solutions are reviewed. The studied systems are protein (lysozyme)/water solutions, colloidal ZnO particles/water sols, nanoporous NiO-based xerogels, hybrid organic-inorganic siloxane-PEG and PPG nanocomposites and PbTe semiconductor nanocrystals embedded in a glass matrix. These investigations also focus on the transformations of time-varying structures and on str (more) uctural changes related to variations in temperature and composition. The reviewed investigations aim at explaining the unusual and often interesting properties of nanostructured materials and solutions. Most of the reported studies were carried out using the SAXS beamline at the National Synchrotron Light Laboratory (LNLS), Campinas, Brazil.
This paper reports on the mathematical model developed by Sunu and Bennion that has been extended to include the separator, precipitation of both solid ZnO and K{sub 2}Zn(OH){sub 4}, and the air electrode, and has been used to investigate the behavior of a primary Zn-Air battery with respect to battery design features. Predictions obtained from the model indicate that anode material utilization is predominantly limited by depletion of the concentration of hydroxide ions. The effect of electrode thickness on anode material utilization is insignificant, whereas material loading per unit volume has a great effect on anode material utilization; a higher loading lowers both the anode material utilization and delivered capacity. Use of a thick separator will increase the anode material utilization, but may reduce the cell voltage.
Yb3+?Tm3+ codoped tellurite glasses containing silver nanoparticles (NPs) were synthesized and characterized using transmission electron microscopy and optical techniques. The samples? composition and the nucleation of NPs were investigated using electron diffraction and energy dispersive spectroscopy. For the optical experiments, the samples were excited using a diode laser operating at 980?nm, in resonance with the Yb3+ transition 2F7/2?2F5/2. Photoluminescence (PL) bands corresponding to Tm3+ transitions were observed at 480, 650, and 800?nm due to the Yb3+? Tm3+ energy transfer. PL enhancement was achieved by heat-treatment of the samples at 325?C during different time intervals. The growth of the PL bands correlates with the increase of the silver NPs concentration. The relevant mecha...
The flame retardancy of polybutylene terephthalate (PBT) was studied focusing on the effect of various oxides. Thermo-gravimetric analysis, pyrolysis/gas chromatography/mass spectrometry, and elemental analysis (EA) were used to analyze the flame retardancy, which were observed through the UL-test and a cone calorimeter. Many oxides influenced the flame retardancy and some of them could suppress the flammability of PBT. In particular, the blended-PBTs with ZnO and V2O5 accelerated the degradation and the edges of oxygen consumption were shorter than neat-PBT although the flammability became poorer. The quantitative analysis of the scission products and the results of EA showed that hydrolysis, successive dehydration, and other various reactions changed the scission route to generate less f...
As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of ...
Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.
To eliminate their classical brittleness and flexibility problems zein films were plasticized by incorporation of different phenolic acids (gallic acid (GA), p-hydroxy benzoic acid (HBA) or ferulic acids (FA)) or flavonoids (catechin (CAT), flavone (FLA) or quercetin (QU)). The use of GA, CAT, FA and HBA at 3 mg/cm2 eliminated the brittleness of films and gave highly flexible films showing elongations between 135% and 189%, while FLA and QU caused no considerable effect on film elongation. The films containing FA and HBA showed extreme swelling and lost their structural integrity when hydrated in distilled water. In contrast, CAT and GA containing films maintained their integrity following hydration. Most of the GA (up to 93%) and a considerable portion of CAT (up to 60%) in the films exis...
The combined process of low temperature plasma nitriding and TiN film deposition was realized on the plasma-assisted vacuum arc plating set. The process of plasma nitriding can be done below 200 degree C. The low temperature plasma nitriding and TiN film deposition was realized on the same device. By the SEM analysis of the plating structure, low hardness grads from the substrate to the film was obtained, and it was found that the mixed nitride plating formed at the interface between the substrate and the film. The quantitative measurement of substrate-film adherence showed that the adherence was improved notably by using the process. The adherence between film and substrate can reach to 59.6 MPa without the bias voltage supplying
Palladium chloride films have been found to be useful as ... when suitably prepared palladium chlo- ride films are exposed ... Like the palladium chloride ( PdCl2) ...
A technique has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb and Cs). The method is based on the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag or other metal powders. The following intensities are typical of those observed from carbonate samples subjected to approx. = 3 keV cesium ion bombardment: Li/sup -/: greater than or equal to 0.5 ..mu..A; Na/sup -/: greater than or equal to 0.5 ..mu..A; K/sup -/: greater than or equal to 0.5 ..mu..A; Rb/sup -/: greater than or equal to 0.5 ..mu..A; Cs/sup -/: greater than or equal to 0.2 ..mu..A.
The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps.
Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.
Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.
A focused ion beam (FIB) is used to accurately sculpt predetermined micron-scale, curved shapes in a number of solids. Using a digitally scanned ion beam system, various features are sputtered including hemispheres and sine waves having dimensions from 1-50 {micro}m. Ion sculpting is accomplished by changing pixel dwell time within individual boustrophedonic scans. The pixel dwell times used to sculpt a given shape are determined prior to milling and account for the material-specific, angle-dependent sputter yield, Y({theta}), as well as the amount of beam overlap in adjacent pixels. A number of target materials, including C, Au and Si, are accurately sculpted using this method. For several target materials, the curved feature shape closely matches the intended shape with milled feature depths within 5% of intended values.
This paper reports that the point defect model for steady-state passive films formed anodically on metal s in aqueous environments has been extended to include irreversible dissolution of the film and the irreversible generation and annihilation of cation and oxygen vacancies at the metal/film and film/solution interfaces. THe model yields a number of diagnostic criteria that can be used to identify the majority (vacancy) charge carrier and to characterize the kinetic nature of the interfacial vacancy generation and annihilation processes. We use these criteria to show that the steady-state passive film that forms on nickel in acidic phosphate buffer solutions is a cation conductor and that cation transport from the metal to the solution involves irreversible ejection of cations from the film. On the other hand, the passive film that forms ...
Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film was of the order of ...
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N {sub D}) for the passive film is of the order of 10{sup 21} cm{sup -3} and decreases with increasing formation time and potential, ...
The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N _D) for the passive film is of the order of 10"2"1 cm"-"3 and decreases with increasing formation time and potential, indicating ...
The capacity extension of additives was tested in a 200 cm/sup 2/bi-cell and a Zn powder moving-bed slurry. It was found that for the Type A additives in 12 M KOH, 25 g/l of silicate provided higher capacity than stannate, titanate and aluminate additives. The optimum concentration of sorbitol (a Type B additive that stabilizes polymeric chains involving ZnO) was found to be 15 g/l in 12 M KOH. A silicate and sorbitol combination added to Zn powder slurry in 12 M KOH provided a 20% increase in discharge capacity (195 Ah/l at 200 A/cm/sup 2/) compared to the maximum capacity obtained with silicate alone. A much lower capacity (74 Ah/l) was realized with silicate as Type C additive (precipitation of ZnO away from the Zn surface, for low KOH concentrations). The mechanisms of passivation and capacity extension were discussed and a model presented. The cell voltage and power densities were determined for the discharge process as a function of (a) ...
A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, Fe-, Co- or Ni-doped ZnS, ZnSe and ZnTe ...
Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).
This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.
The structure and composition of the passive films formed on 304 stainless steel in deaerated IN H{sub 2}SO{sub 4} were studied by RHEED, XPS and AES. The stability of the passive films as a function of passivation potential and passivation time were investigated. The role of bound water in affecting the stability of the passive films is discussed. 7 refs., 3 figs.
Only two years ago, plastic film recycling was considered an onerous task. Different resins had to be identified, colors had to be separated, and minute contaminants had to be weeded out almost by hand to produce a quality material. But the tide of plastic film recycling is changing now that new technologies have emerged and more organized collection infrastructure have been developed. Today, plastic film recycling maintains a lucrative market for those with the right combination of equipment and know-how.
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
Size-controllable Ag nanoparticle ultrathin films, which were fabricated by vacuum deposition method from high purity Ag wire onto cleaned indium tin oxide conducting glass, have different color fabricated by variation of preparation conditions. The UV/Vis spectra showed that optical absorption peak of these Ag nanoparticle films can be tuned in a range from 457nm to >650nm. Scanning electron microscopy images showed that with increasing film thickness Ag particle size was larger. Ag/WO3 composite films were prepared by cathodic electrodeposition of WO3 onto the surface of Ag nanoparticle films. Spectroelectrochemistry and electrochromic properties of the resulting composite films were characterized. It was found that the electrochemical and electrochromatic properties of the composite fil...
Passive films formed on stainless steels in a borate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure ...
The conductive ultra thin films were fabricated from mixed monolayers containing stearic acid and Head-to-Tail poly(3-alkylthiophene). These films exhibited well-defined layered structures as determined by optical absorption and X-ray diffraction measurements. The UV-Vis absorption spectra of these films showed lower energy absorption shifts of 48 nm from that of the random poly(3-alkylthiophene)/stearic acid LB films. The blue shift of absorption maximum of the LB film is attributed to the increase of {pi}-conjugation length caused by no steric hindrance of alkyl side chains. The conductivity of the Head-to-Tail poly(3-hexylthiophene)/stearic acid LB films was greatly improved in the range of 67-100 S/cm. (orig.)
X-Ray reflectivity has been used to investigate the microstructural changes of solution-cast stearic acid films before and after immersion in CoCl{sub 2} solutions. Before immersion, the films possess a well-defined layered structure with an interlayer spacing of 4.01{+-}0.05 nm. After the films were immersed in the CoCl{sub 2} solutions, a new set of equidistant diffraction peaks emerge, the corresponding interlayer spacing of which is 5.13{+-}0.05 nm. The X-ray photoelectron spectra of the films indicate the existence of cobalt ions inside the films after immersion. It is concluded that the permeation of the cobalt ions into the hydrophilic interlayer causes the stearic acid molecules to reorient perpendicular to the films, resulting in the increase of interlayer spacing and the roughening of the interfaces.
Cold spray was employed as a novel low temperature approach to deposit titanium dioxide (TiO{sub 2}) photocatalytic film. The film microstructure was characterized using X-ray diffraction and scanning electron microscopy. The photocatalytic performance was examined through acetaldehyde degradation under ultraviolet illumination. Results showed that TiO{sub 2} film was successfully deposited on substrate surface through cold spray. The film thickness reached up to 15 {mu}m. The film presented a rough surface and porous structure. Owing to the low temperature of spray powder, no phase and particle size changes occurred to TiO{sub 2} during deposition. It was found that the cold-sprayed TiO{sub 2} film was active for photodegradation of acetaldehyde.
Passive films were formed on a high purity Fe-23 Cr alloy in acid sulfate solutions in the presence and absence of chloride ion. The resulting film composition was investigated by Auger depth profiling. The passivated samples were exposed to a 1M NaCl solution at a constant potential slightly above the critical pitting potential, and the current-time transient was measured in order to compare the relative stability of the different films. The results obtained suggest that the formation conditions influence the chloride content of the passive film and the breakdown behavior. Passive films formed in the presence of chloride contain and are slightly less stable towards breakdown. No chloride was found in films formed in sulfate and subsequently exposed to chloride well below the pitting potential.
The total hemispherical emittance of an oxide film that formed on 6061-T6 aluminium alloy parts in the Tower Shielding Reactor-II at Oak Ridge National Laboratory was measured from 295 to 773 K using an emissometer and/or a calorimeter. The emittance of this film was critically needed for heat transfer calculations in a simulated loss-of-coolant accident of the reactor. X-ray diffraction analysis identified the film as boehmite (Al_2O_3 x H_2O), which dehydrated to alumina (Al_2O_3) upon heating above 473 K. The measured emittances for the alumina film are in excellent agreement with published values for anodized aluminum films and for bulk alumina. Published values of the emittance of boehmite could not be found for comparison, but evidence is presented that some anodization processes for aluminum yield boehmite and not alumina films.
The physical and antioxidant properties of alginate biodegradable film incorporating white, red and extruded white ginseng extracts were investigated. No differences in moisture contents of all alginate film samples were noticeable (p>0.05) except those film samples incorporated without ginseng extract, which had the highest moisture content. The addition of ginseng extract to alginate film decreased tensile strength and elastic modulus (p<0.05) but increased the percent elongation at break. The presence of extracts did not significantly affect the water vapor permeability of the film samples. Alginate film containing extruded white ginseng extract at a barrel temperature of 130degreeC presented the highest (61.12%) free-radical scavenging activity against the 2,2-diphenyl-1-picryhydrazyl ...
The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA.
The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA. (author).
Technology of plasma sputtering, structure and properties of zirconium dioxide coatings were studied. Necessity of void number increase to enhance coating heat-resistance is shown. Optimal powder particle size (20-60 #mu#m) providing optimal coating porosity was determined. Weight part of stabilizating oxide (Y_2O_3) in ZrO_2 for formation in coating of microcracks serving as barriers for macro-cracks propagation was determined.
Focused ion beam (FIB) systems prove to be useful precision micromachining tools for a wide variety of applications. This micromachining technique includes scanning ion microscopy (SIM), micromachining by physical sputtering, and the ion-beam induced surface chemistry for etching and deposition. This technique is applied to image and modify IC's, to micromechanical applications, to modify the tip shape of tungsten emitters, and to prepare cross sections of selected regions for inspection in a transmission electron microscope (TEM). (orig.)
In a reactor environment, the surface of a limiter or wall is primarily determined by the mechanism of erosion and deposition of surface material. It should be possible to use pellet injection to reduce net erosion to zero everywhere if low-Z materials are used for the surface. Erosion rates can, in general, be minimized by large area limiters and high plasma temperatures, which transmit power to the walls with less sputtering. Under ideal steady state conditions the wall surface is dominated by metallurgical effects in the wall.
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness
Critical power at boiling transition is an important factor in a boiling water reactor (BWR) fuel bundle design. Boiling transition under high quality accounts for dryout as the result of the complete disappearance of film flow on a fuel rod. This liquid film vanishing process can be calculated by the liquid film model, which takes into account the evaporation due to heat from the rod surface, liquid film entrainment by steam flow, and liquid droplet deposition. It is known that spacers affect liquid film entrainment and liquid droplet deposition, so the detailed study of spacer effects on hydrodynamic characteristics is necessary for critical power prediction based on the film flow model. Many studies have been conducted to examine spacer effects on liquid film flow. However, most of them are restricted to simple test sections such as a ...
New physical objects, ispalators based on free soap films, exhibit persistent flows of the soap solution in open and closed volumes in air with additions of gases of the C_8F_1_8 type (p = 20 Torr) at temperature drops on the films of the order of tenths and hundredths of kelvin. The flows move continuously at a velocity of 5 - 20 cm s"-"1. It is found that the parts of an inclined ispalator film show anomalous behaviour upon heating: their weight increases and they move downward over the film, whereas the unheated parts of the film move upward. Continuous radial vortex flows accompanied by the formation and washing of the regions of a thin black film are observed on circular films in closed volumes upon their uniform external cooling by evaporating water for 5 - 10 hours. The rapid flows make film ispalators the ...
The properties of a helium film on the surface of solid parahydrogen are investigated. It is shown that wetting of the solid hydrogen by the liquid helium occurs. The transport velocities along the He II film on the solid parahydrogen surface are measured in broad temperature, film height, and level difference ranges. It is shown that the transport velocity in this case has the least value as compared with its value on other substrates. The thickness of the helium-saturated film is determined on the solid hydrogen surface on the basis of the data obtained, and the value is in good agreement with the results of a computation performed within the framework of the Frenkel' theory.
A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence x-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films. (author)
By the methods of small-angle X-ray scattering and translucent electron microscopy the existence of inhomogeneity of electron density in hydrogenated films of amorphous silicon is confirmed. The decreased density regions are extended and form a branched network of channels oriented mostly by the normal direction to the films surface. The typical size of the decreased density regions network constitutes 10 nm in the 100-800 nm films thickness range. The increase of hydrogen total partial pressure in gas mixture in case of films growth results at first in the decrease of extension of these regions and than to micropores generation in the network nodal points of the decreased electron density regions.
A simple experiment to observe weak localization in thin Ag films is presented. A clear theoretical signature of weak localization is predicted in mangetoresistive measurements of thin films samples. We present a simple method for making thin Ag film samples, using evaporative deposition, and observing the small magnetoresistive signal, using a resistance bridge technique. Typical results from our students show that Ag films show the predicted behavior for weak localization with spin effects. These effects can be easily observed in a liquid helium dewar.
For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are ...
Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of ...
Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the Csc-2 vs. Vm plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the Csc-2 vs. Vm plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of Nickel base alloy after being ...
A theoretical model, which describes subband gap photoexcitation involving localized electronic states, was developed. The escape probability of a charge carrier trapped in a localized state is considered via Poole-Frenkel, direct tunneling, or phonon-assisted tunneling processes, as competing escape mechanisms. Photoelectrochemical experiments were performed on the passive films formed on zirconium and amorphous iron-zirconium alloys and on pure HfO/sub 2/ films and HfO/sub 2/ films implanted with varying concentrations of xenon. These films were found to possess some degree of disorder depending on the substrate, the thickness of the film, and the extent of implantation. The spectral dependence of the photocurrent in all of the films studied is considerably different from what was found for crystalline passive films. The potential ...
The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission electron microscopy ...
Recent progress in the metallic conducting Langmuir-Blodgett (LB) films built from TTF derivative and fatty acids is reported. A simple LB method of transferring the mixed Langmuir (L) film of BEDO-TTF (BO) and stearic acid (SA) onto substrates provided metallic conducting LB films. A homogeneous L film formation on the water surface observed by Brewster angle microscope (BAM) is an essential factor for the well-ordered LB films. In the L film, the carboxylate group of fatty acid forms anion layer bringing about a spontaneous formation of mixed valence state (MVS) of BO layer. Similar spontaneous formation was also found in the molecular combination of nonoxygen-substituted donor of EDT-TTF and octadecanesulfonic acid (OS). This type of reaction would be useful for obtaining conducting LB films. For the LB films of ...
The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the ...
Mesoporous films of platinized carbon nanotube-zirconia-Nafion composite have been used for the immobilization of tris(2,2prime-bipyridyl)ruthenium (II) (Ru(bpy)32+) on an electrode surface to yield a solid-state electrogenerated chemiluminescence (ECL) sensor. The composite films of Pt-CNT-zirconia-Nafion exhibit much larger pore diameter (3.55 nm) than that of Nafion (2.82 nm) and thus leading to much larger ECL response for tripropylamine (TPA) because of the fast diffusion of the analyte within the films. Due to the conducting and electrocatalytic features of CNTs and Pt nanoparticles, their incorporation into the zirconia-Nafion composite films resulted in the decreased electron transfer resistance within the films. The present ECL sensor based on the Pt-CNT-zirconia-Nafion gave a lin...
The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.
In 1977 and 1978, Sandia National Laboratories, located in Albuquerque, New Mexico, and operated for the US Department of Energy (DOE), filmed a series of crash and fire tests performed on three casks designed to transport irradiated nuclear fuel assemblies. While the tests were performed to assess the applicability of scale and computer modeling techniques to actual accidents, films of them were quickly pressed into service by the DOE and nuclear utilities as ``proof`` to the public of the safety of the casks. In the public debate over the safety of irradiated nuclear fuel transportation, the films have served as the mainstay for the nuclear industry. Although the scripts of all the films were reviewed by USDOE officials before production, they contain numerous misleading concepts and images, and omit significant facts. The shorter versions eliminated qualifying statements contained in the longer ...
Grooving CVD diamond films using a focused ion beam (FIB) to quarry micro parts is described. The substrate-side surface of a polycrystalline diamond film which is prepared by means of microwave plasma CVD, is able to be grooved by a focused Ga ion beam scanned straight repeatedly. The groove has cross section whose shape is like an inverted Gaussian distribution curve. And the surface roughness of the films before grooved influences that of grooves. Under the same irradiation conditions, deeper, narrower, in short, high aspect ratio grooves are obtained on B-doped semiconducting microwave plasma CVD diamond films. Coating electrical conductive material is also effective method to obtain high aspect ratio grooves. It is supposed that these results are due to the degree of electrification on the surface and that FIB irradiation is a suitable method for micromachining semiconducting diamond ...
The surface films formed on type 316LN stainless steels (SS) with different nitrogen contents, during potentiodynamic polarization in acidified 1 M NaCl solution, were characterized by Laser Raman Spectroscopy (LRS). LRS confirmed the presence of oxides and oxychlorides of iron and chromium, hydrated chlorides and nitrates in the film. Raman mapping showed increasing nitrate content in the film with increasing nitrogen content. The film on the uncorroded material showed the presence of chromium and molybdenum oxides. The improvement in pitting corrosion resistance of type 316LN SS with increasing nitrogen content was attributed to increased amount of nitrates in the passive film.
The surface films formed on type 316LN stainless steels (SS) with different nitrogen contents, during potentiodynamic polarization in acidified 1 M NaCl solution, were characterized by Laser Raman Spectroscopy (LRS). LRS confirmed the presence of oxides and oxychlorides of iron and chromium, hydrated chlorides and nitrates in the film. Raman mapping showed increasing nitrate content in the film with increasing nitrogen content. The film on the uncorroded material showed the presence of chromium and molybdenum oxides. The improvement in pitting corrosion resistance of type 316LN SS with increasing nitrogen content was attributed to increased amount of nitrates in the passive film.
In this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34x10^-^1^3Scm^-^1. The height of the potential barrier was determined to be 1.65eV for this alternate layer LB film system.
The effect of surface treatment on the characteristics of the passive film on a super duplex stainless steel is addressed. Auger Electron Spectroscopy (AES) has been used to provide in-depth chemical profile analyses of the passivation film. This study showed that the constitution of the film is largely dependent on the electrolytic conditions under which it is produced or to which it is submitted. The passive films formed by polarisation in an alkaline solution (boric-borate solution) consist of two regions, an inner region rich in chromium and an outer region rich in iron, whilst the films produced in acid solution only present the chromium - rich region. The film thickness is also greatly affected by the polarisation conditions. It can vary from ca. 8 monolayers to about 20 monolayers for cathodically and anodically polarised specimens respectively. The ...
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.) 30 refs.
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.)
Surface study techniques were used to investigate films on Type 304 stainless steel which were formed during exposure to high purity water at 288"0C. The results indicated that the film chemistry depended strongly upon the concentration of the dissolved O_2 in the water. Films formed in water having 8 ppm O_2 were stoichiometric mixed oxides; whereas those formed in water with 10 ppb O_2 were highly defective oxyhydroxides. The latter films are not as protective as the stoichiometric oxides. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to investigate the films. (Auth.).
In this work passive films formed in AISI 304 stainless steel were envisaged as semiconductors and studied by means of photoelectrochemistry and Mott-Schottky plots. The passive films were potentiostatically formed at different potentials (0.2-0.8V) in a basic borate/boric acid solution without and with addition of NaCl (0.5 and 1g/l) and at various temperatures in the range 8-60"oC. The influence of these parameters on the photocurrent, quantum efficiency, bandgap energy and density of charge carriers was determined. The results show that the experimental conditions at which the films are formed influence the semiconductive properties of the film, which seem to be related to the higher or lower stability of the film. An Arrhenius type of relationship was also found between the density of charge carriers and temperature, leading to the determination of an activation energy. (author) ...
The construction materials used in coolant systems in nuclear power plants become covered with oxide films as a result of exposure to the aqueous environment. The susceptibility of the materials to different forms of corrosion, as well as the extent of the incorporation of radioactive species on the surfaces of the primary circuit, are greatly influenced by the physical and chemical properties of these oxide films. The composition and characteristics of the oxide films in turn depend on the applied water chemistry. This work was undertaken in order to collect and evaluate the present views on the structure and behaviour of oxide films formed on iron- and nickel-based materials in aqueous environments. This survey should serve to recognise the areas in which more understanding and research effort is needed. The review begins with a discussion on the bulk oxides of iron, nickel and chromium, as well as ...
A method for using in situ X-ray absorption near edge spectroscopy to determine the composition of passive, transpassive, and nonreducible thin oxide films is described. The method is demonstrated by determining the composition of the passive films formed in pH 4.5, 0.1 M acetate buffer, on 100 {angstrom} thick Fe-yCr alloys (y = 8.5, 15, 19, 23 atom %) at potentials: (1) low in the passive region ({minus}0.3 V vs. mercurous sulfate reference electrode, MSE); (2) high in the passive region; (3) in the transpassive region; and (4) in the cathodic region where the air-formed film is not fully reduced. The nonreducible film at {minus}1.2 V is entirely a Cr{sup 3+} oxide/hydroxide. This nonreducible film persists at anodic potentials. At {minus}0.3 V, the passive film on each alloy is significantly enriched in Cr. The film at {minus}0.3 V ...
The thermal desorption of stearic acid on superhydrophobic zinc oxide nanotowers has been investigated. The stearic acid passivated zinc oxide nanotowers provide a very high contact angle of {approx}173 {+-} 1.1 deg. with a very low hysteresis of {approx}1.4 {+-} 0.5 deg. due to the presence of a binary structure composed of several nanosteps on each nanotower of height {approx}700 nm that eventually reduces the area of contact between the drop and the nanotowers and trapping more air as revealed by the field emission scanning electron microscopy images. The superhydrophobic performance of these nanotowers, however, declines following annealing at elevated temperatures. Fourier transform infrared spectra show a reduction in the intensity of stearic acid -CH{sub n} peaks at elevated temperatures revealing the cause of the decrease in contact angle and confirming the occurrence of thermal desorption at 184 deg. C. The corresponding activation energy for desorption determined from our ...
The solar thermal production of zinc is considered for the conversion of solar energy into storable and transportable chemical fuels. The ultimate objective is to develop a technically and economically viable technology that can produce solar zinc. The program strategy for achieving such a goal involves research on two paths: a direct path via the solar thermal splitting of ZnO in the absence of fossil fuels, and an indirect path via the solar carbothermal/CH{sub 4}-thermal reduction of Zn O, with fossil fuels (coke or natural gas) as chemical reducing agents. Both paths make use of concentrated solar energy for high-temperature process heat. The direct path brings us to the complete substitution of fossil fuels with solar fuels for a sustainable energy supply system. The indirect path creates a link between today`s fossil-fuel-based technology and tomorrow`s solar chemical technology and builds bridges between present and future energy economies. (author) 1 fig., ...
This research aims to investigate the effects of chemical blowing agent (CBA) contents and particle sizes on the properties of foamed poly(vinyl chloride) (PVC)/rice hull (RH) composites. Fine particles of azodicarbonamide (AC) at 5, 8, 11 and 22mm were modified with 20% by weight of ZnO and used at 0-3.0% by weight. The average cell size and density of the PVC/RH foamed profiles were reduced as the content of modified azodicarbonamide (mAC) increased. Larger mAC particles lowered the density more effectively. Maximum reduction of density by 46% was achieved when mAC 22mm was applied at 2.0% by weight. Larger blowing particles led to PVC/RH foam with greater flexural modulus and strength. Greater impact strength, observed when 5mm mAC was applied, resulted from the rather thick cell wall c...
Field corrosion tests were conducted on eight single tube materials and two welded overlay materials in three typical Japanese waste incineration plants in an effort to develop new corrosion-resistant superheater tubes capable of functioning efficiently under temperature and pressure conditions of 500 C and 100 kgf/cm{sup 2}-g in high-efficiency waste-to-energy (WTE) plants. Austenitic alloys containing higher concentrations of chromium, nickel, and molybdenum [Cr + Ni + Mo] showed excellent corrosion-resistant properties, and the new alloys JHN24 and HR30M showed good corrosion resistance. Different corrosion rates found in each of the three plants were explained by differences in operating conditions, such as gas temperature, concentration of molten salts resulting from chlorine (Cl) content of deposits, heavy metal (zinc oxide [ZnO] + lead oxide [PbO]) content, etc. It was confirmed that the corrosion rate of materials positioned in the first tube row facing the ...
In this work, amorphous hydrocarbon (a-C:H) film deposition on metallic mirrors was studied during working shots in tokamak T-10 and at exposure in Ar/CHD3/D2 dc magnetron discharge in a special laboratory high vacuum setup. Analysis of film composition (including hydrogen content) was carried out using nuclear physical methods. Thickness and optical parameters (refractive and extinction coefficients) of the films were estimated by ellipsometry. Laboratory films can be characterized as soft a-C:H films in comparison with hard tokamak films (? = 1.2 and 1.8 g/cm3, respectively). For the first one, a linear dependence of deposition rate on mirror temperature was observed in a wide temperature range. The addition of methane into initial Ar/D2 magnetron gas mixture leads to an increase of deposition rate. The data obtained should be taken into account to prevent ...
Thin film solar cells and solar cell testing - photovoltaic cells, radiation damage to cadmium sulfide solar cells, and airplane testing of solar cells
This paper addresses one source of degradation in OPV devices: the metal/organic interface. The basic approach was to study the completed device stability vs. the stability of the organic film itself as shown in subsequent devices fabricated from the films.
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is ...
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both ...
Rheological properties of moderately concentrated solutions of cellulose in methylmorpholine N-oxide-dimethylformamide mixtures containing hydrophilic montmorillonite nanoparticles were studied. Film composite materials were prepared, and their physicomechanical properties and structural organization were studied.
The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...
Buccal bioadhesive films, releasing topical drugs in the oral cavity at a slow and predetermined rate, provide distinct advantages over traditional dosage forms. The aim of present study was to prepare...Full Text Available
A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available
A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was ...
The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for extremely thin film and so ...
In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical ...
In order to understand the anodic behaviour of Al--Mo and Al--W amorphous alloys in the borate buffer electrolyte, samples of these alloys were polarized galvanostatically. The resultant anodic films were thicker than the passive films formed during potentiodynamic polarization enabling detailed examination of the films and alloy substrates by surface analytical methods. AES investigations suggest that the anodic films formed at low and moderate voltages on Al--Mo or Al--W amorphous alloys consist of Al-oxide, whereas refractory metals remain unoxidized and enriched at the film/substrate interface. Molybdenum and tungsten act as 'dissolution moderators', restraining the substrate dissolution process at the film/substrate interface. However, after anodization at high voltages (50 V), AES revealed the presence of an oxidized refractory metal in ...
Experimental investigations of the turbulence characteristics of the air flow above the wave surface of the film in the horizontal rectangular channel in the 5-20 m/s velosity range of the air rate change (Reynolds number for the air 120O0-48000, 100-1000 for the film) are carried out. It is shown that intensities of turbulent pulsations of the rate increase with the growth of liquid flow rate in the film especially in the region of large squall waves. The experimental results on the pulsations are presented in the dimensionless form by a universal dependence. Distributions of tangentials of turbulent stresses above the film are obtained, turbulent stresses are compared with friction losses at the phase interface.
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.
Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si_3N_4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decrease, and the densification of the film increases. When the temperature is up to 360 degree C, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si_3N_4 films is also examined
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
The passive corrosion rate of Alloy 22 is exceptionally low in a wide range of aqueous solutions, temperatures and electrochemical potentials, Alloy 22 contains approximately 22% chromium (Cr) by weight; thus, it forms a Cr-rich passive film in most environments. Very little is known about the composition, thickness and other properties of this passive film. The aim of this research was to determine the general characteristics of the oxide film that forms on Alloy 22, as a function of solution pH, temperature and applied electrochemical potential.
A temperature gradient across a thick ({ge}.1mm) film selective emitter will produce a significant reduction in the spectral emittance from the no temperature gradient case. Thick film selective emitters of rare earth doped host materials such as yttrium-aluminum-garnet (YAG) are examples where temperature gradient effects are important. In this paper a model is developed for the spectral emittance assuming a linear temperature gradient across the film. Results of the model indicate that temperature gradients will result in reductions the order of 20{percent} or more in the spectral emittance. {copyright} {ital 1997 American Institute of Physics.}
Evolution of the passive films formed on AISI 304L and duplex stainless steel SAF 2205 in NaOH 0.1 M was investigated using cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS). Special attention is paid to the effect of Mo in the generation of the films. Results point out to the stabilising effect of the molybdates on the surface of the film, enhancing the formation of a thin layer on the SAF 2205 with a higher Cr/Fe ratio.
One of the main problems related to optical thin film materials used in high power laser environments is the catastrophic damage caused to them due to laser irradiation. While the influence of ion bombardment on the optical properties of oxide thin films is now a well understood subject, the morphology and crystalline behaviour of these films under ion incidence is not so well studied. Hence, it is of great importance to investigate the effects of ion bombardment during growth on the microstructure and crystalline behaviour of oxide materials.
Photocurrent measurements for stainless steel type 304 in the as-received condition after dc and AV (alternating voltage) passivation have confirmed that significant changes of the passive film properties occur due to AV passivation. The photocurrents were the highest for the sample treated by the AV passivation process (AVPP). The bandgap energy increased from about 2.8 to about 3.05 eV for this treatment. Very similar results have been obtained for pure chromium, which suggests that the AVPP produces a thicker passive film with a less defective nature due to a partial dehydration of the chromium oxide phase in the film.
... analyzer section for angle resolved measurements, and a thin film evaporator with a quartz crystal microbalance to measure the mass deposition. ...
The energy distribution of ion beams is important especially for low energy ion beam applications. The energy distributions of negative-ion beams produced through secondary ion emission by sputtering were measured and compared with theoretically estimated distributions by use of four different negative-ion production probability equations (modified surface ionization model, exponential velocity dependence model, and our modified exponential velocity dependence models (modified decaying factor model and combination model of velocity dependence and surface ionization)). In the measurements, the energy distributions of C"- and Ag"- beams had a peak at a few to several eV and the full width at half maximum were 15 eV and 11 eV, respectively. These results could be well explained by the estimated distributions by virtue of our combination model or the modified surface ionization model. copyright 1996 American Institute of Physics.
Superconductivity of binary alloys spanning the A-15 compounds V/sub 3/Si, V/sub 3/Ge, V/sub 3/Ga, and V/sub 3/Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V/sub 3/P,'' ''V/sub 3/B,'' and ''V/sub 3/C'' and their pseudobinary formation with V/sub 3/Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7/sup 0/K was obtained for A-15 V/sub 3/Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among ...
Superconductivity of binary alloys spanning the A-15 compounds V_3Si, V_3Ge, V_3Ga, and V_3Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V_3P,'' ''V_3B,'' and ''V_3C'' and their pseudobinary formation with V_3Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7"0K was obtained for A-15 V_3Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among pseudobinary alloys imply a rapid variation of the density of states at the Fermi level.
A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li/sup -/: greater than or equal to0.5 ..mu..A; Na/sup -/: greater than or equal to0.5 ..mu..A; K/sup -/: greater than or equal to0.5 ..mu..A; Rb/sup -/: greater than or equal to0.5 ..mu..A; Cs/sup -/: greater than or equal to0.2 ..mu..A. 7 refs., 2 figs., 1 tab.
A versatile, high brightness, volume type, low power RF source, capable of producing positive ion beams with intensities as high as 1 mA from gaseous feed materials and microamperes of negative ion beams has been characterized. The source can also be operated as a plasma sputter negative ion source to generate up to 1 mA of a selected species. The performance of the source in the positive and negative volume modes of operation can be greatly enhanced by addition of a removable, water cooled filament assembly in place of the negative sputter probe. For examine, the material utilization efficiencies of gaseous feed species can be more than doubled, total current intensities increased up to 40%, molecular dissociation fractions increased by 20% and minimum operating pressures reduced by a factor of four when operated in the volume mode. These added electrons also favorably effect, as a consequence of lower pressures, the emittance apparently ...
Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using Ga and Bi LMIS showed that, for ...
Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the materials produced higher values for the rougher evaporation-formed interfaces ...
We have researched several new focused ion beam (FIB) micro-fabrication techniques that offer control of feature shape and the ability to accurately define features onto nonplanar substrates. These FIB-based processes are considered useful for prototyping, reverse engineering, and small-lot manufacturing. Ion beam-based techniques have been developed for defining features in miniature, nonplanar substrates. We demonstrate helices in cylindrical substrates having diameters from 100 {micro}m to 3 mm. Ion beam lathe processes sputter-define 10-{micro}m wide features in cylindrical substrates and tubes. For larger substrates, we combine focused ion beam milling with ultra-precision lathe turning techniques to accurately define 25-100 {micro}m features over many meters of path length. In several cases, we combine the feature defining capability of focused ion beam bombardment with additive techniques such as evaporation, sputter deposition and ...
In order to enhance the resistance to the pitting corrosion due to asepsis processes and to avoid structural fractures in dentistry drills, a plasma immersion ion implantation (PIII) treatment using nitrogen has been performed. The selected drill samples, made of AISI 434 based stainless steel with a 0.670 mm diameter, were treated at a -1kV bias between 350 C and 450 C, this temperature being controlled by both a 20-50 {mu}s pulse width and a 200-1000 Hz repetition rate in the bias. The drills were analysed by cyclic potentiodynamic tests showing a good pitting corrosion resistance when treated at around 400 C, as follows from a resulting very low hysteresis loop. Yet, the resistance appears somehow diminished by the presence of sputtering when processed at temperatures near 450 C. It is also found that the PIII nitriding effectiveness appears to be limited by the appearance of uniform corrosion. Finally, X-ray diffraction of the samples has revealed the presence ...
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other ...
A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results of these investigations are given, as well, and the technical issues that must be ...
A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.
The state of lithium electrode surface after contact with triethylamine-modified propylene carbonate solutions of lithium perchlorate was studied using the pulse galvanostatic technique as well as methods of SIMS and electron microscopy. It was shown that amine added into the solutions stabilizes the state of lithium and prevents the formation of a secondary porous passive film on the lithium surface. Chemical composition of the primary film remains unchanged. Certain properties of passive films formed in electrolyte solutions studied were evaluated.
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with ...
Results are presented of experiments on partial discharge in liquid nitrogen, including insulation breakdown characteristics of liquid nitrogen, partial discharge characteristics of composite insulation systems, lifetime of polymer films, impulse breakdown of polymer films in liquid nitrogen, etc. The partial discharge characteristics of liquid nitrogen are examined with increasing liquid-nitrogen pressure. It is concluded that a composite insulation structure of polymer film and liquid nitrogen can be used as effective electrical insulators at cryogenic temperatures.
We study the growth of colonies of the yeast Pichia membranaefaciens on agarose film. The growth conditions are controlled in a setup where nutrients are supplied through an agarose film suspended over a solution of nutrients. As the thickness of the agarose film is varied, the morphology of the front of the colony changes. The growth of the front is modeled by coupling it to a diffusive field of inhibitory metabolites. Qualitative agreement with experiments suggests that such a coupling is responsible for the observed instability of the front.
The study by impedance and photoelectrochemical measurements of passive films formed on an AISI 304 type stainless steel shows that important parameters of the electronic structure of these films are modified under ..cap alpha.. irradiation, namely: width of the space charge region, donors concentration and diffusion length for minority carriers. The consequences of ..cap alpha.. irradiation on localized corrosion processes are discussed.
The study by impedance and photoelectrochemical measurements of passive films formed on an AISI 304 type stainless steel shows that important parameters of the electronic structure of these films are modified under #alpha# irradiation, namely: width of the space charge region, donors concentration and diffusion length for minority carriers. The consequences of #alpha# irradiation on localized corrosion processes are discussed.
The structure of hydroxylated oxide films (passive films) formed on Cr(110) in 0.5 M H{sub 2}SO{sub 4} at +0.35, +0.55, and +0.75 V/SHE has been investigated by in situ scanning tunneling microscopy (STM). Cathodic reduction pretreatments at {minus}0.54, {minus}0.64, and {minus}0.74 V/SHE destroy the well-defined topography of the single-crystal electrode and they have been excluded from the passivation procedure. Two different passive film structures have been observed, depending on the potential and time of passivation. At low potential (+0.35 V/SHE), the passive film, consisting mostly of chromium hydroxide, has a noncrystalline and granular structure whose roughness suggests local variations of thickness of ca. {+-} 0.5 nm. A similar structure is observed at higher potential (+0.55 V/SHE), but only for a short polarization time. For longer polarization at 0.55 V/SHE, and at higher potentials (+0.75 ...
General corrosion behavior of ALLOY 800 in high temperature water was studied in relation to its surface film structure. The surface film formed in water was found to decrease the corrosion rate of ALLOY 800. This film is composed of Ni ferrite, and can be obtained by oxidation in air or steam. Based on these results, air or steam oxidation treatment to inhibit Ni and Co release of ALLOY 800 into high temperature water is proposed. (author).
General corrosion behavior of ALLOY 800 in high temperature water was studied in relation to its surface film structure. The surface film formed in water was found to decrease the corrosion rate of ALLOY 800. This film is composed of Ni ferrite, and can be obtained by oxidation in air or steam. Based on these results, air or steam oxidation treatment to inhibit Ni and Co release of ALLOY 800 into high temperature water is proposed. (author).
In the present work, a new kind of myoglobin (Mb)/Au nanoparticles composite film was fabricated on pyrolytic graphite (PG) electrodes. Oppositely charged chitosan (CS) and silica (SiO(2)) nanoparticles were alternately adsorbed on the PG surface by the electrostatic interaction between them, forming {CS/SiO(2)}(5) layer-by-layer films. Mb and HAuCl(4) in solution were then simultaneously loaded into {CS/SiO(2)}(5) films. The loaded Au(III) in the films were electrochemically reduced into Au nanoparticles, forming nanocomposite films, designated as {CS/SiO(2)}(5)-Mb-Au. Various techniques such as cyclic voltammetry (CV), square wave voltammetry (SWV), quartz crystal microbalance (QCM), electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis were used to characterize the films. Compared with ...
The structure of a fragment of the germanium complex compound (GCC) with oxyethylidenediphosphonic acid and the adsorption properties of GCC films with respect to the vapors of water and some other organic liquids have been studied. The electric conductivity of GCC films has been investigated, and its mechanism has been explained.
Deposition of CN-based films by a novel version of active screen plasma nitriding, aiming at surface modification of polymers, is reported. The approach relies on the use of pure graphite as the grid material, which was found to act both as an active screen and as a dry source of carbon atoms for the synthesis of thin films consisting mainly of a stoichiometric CN layer with columnar-type structure and dome-like nanostructured morphology.
Radionuclide X-ray fluorescence analysis was used for the determination of Cu, Y and Ba in very thin high-temperature superconducting films. The precision of the method is better than 3% for about 1 #mu#m thick films. The atomic emission ICP spectrometry was used to testify results of XRF analysis. An acceptable agreement of both methods was obtained. (author) 4 refs.; 2 tabs.
In the context of sputtering experiments, studying the back-scattering of fast ion beams is a useful way to study inelastic ion-surface interactions, since then the trajectories and energies of the particles are well defined. This same argument holds for the scattering of fast molecular ions. We give a short account of our experiment where N"+_2 was scattered from a Ni(111) surface. The measured energy distributions of scattered N atoms are discussed with regard to vibrational and rotational energy transfer during scattering. (G.Q.).
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
The composition and thickness of etch residues on the base of submicrometer via holes cannot be surmized from data on larger features. Auger sputter depth profiles were used to compare etch residues in 0.55 {mu}m via holes produced by different etch processes and remaining after different cleans. These residues varied significantly in composition and thickness with the processing history of the sample and from those on larger features. A focused ion beam (FIB) sample preparation was developed to expose the bases of via holes and to help reduce sample charging. (author).
An RF plasma sputter type heavy negative ion source, which can deliver mA-class negative ion beams (12.1 mA, 1.6 mA and 2.3 mA for Cu{sup -}, C{sup -} and C{sub 2}{sup -} currents, respectively) in dc-mode operation, has been developed. In ion source, a dense plasma of 10{sup 11} cm{sup -3} order was generated in the xenon gas pressure of 10{sup -3}-10{sup -2} Pa with an rf (13.56 MHz) power of 200 - 300 W by using an RF coil, and a relatively large sputtering target of 42 mm in diameter was used. As for intense negative ion beams of silicon or boron which are important dopants for semiconductor fabrication, negative ion extraction properties of the negative ion source was investigated. The extracted total negative ion currents of 4.4 mA for a silicon target and 2.8 mA for a LaB{sub 6} target were obtained after electrons were eliminated by magnetic field near the extraction hole. From results of mass-analysis, it was found that Si{sup -} ...
Some magnetron sputtering systems experience rapid oscillations in the current and voltage of the plasma discharge after several hours when equipped with certain targets. These oscillations often lead to the plasma becoming extinguished, a condition known as ''flame-out.'' This article details the study of two 90% W--10% Ti magnetron targets which differed in density. The higher density targets sometimes experienced flame-out after approximately 3 h of sputtering. The less dense material could be sputtered for the entire 15 h life of the target. Scanning electron microscopy pictures and atomic composition depth profiles were obtained using Auger electron spectroscopy. In addition, a Colutron-based ion source with a high vacuum system was used to measure ion-induced secondary electron emission coefficients as a function of energy, ion specie, and gas coverage. Analysis of the sample from the group that suffers flame-out ...
A working visit was made to the National Laboratory for High Energy Physics, Tsukuba, Japan, during the time periods May 16, 1988--June 15, 1988 for the purposes of further evaluation of the high intensity plasma sputter negative ion source and to test the response of the University of Tsukuba 13-MV tandem accelerator to mA intensity level pulsed mode heavy negative ion beams. During the visit, the traveler worked in collaboration with Japanese scientists in installing and testing of the source on the University of Tsukuba tandem electrostatic accelerator injector. During the course of preliminary testing of the ion source and prior to actual injection into the accelerator, sparking began in one or more tube sections, which ultimately led to the decision to replace the damaged tube sections. This problem led to postponement of the scheduled tandem accelerator tests. The traveler attended the Seventh International Conference on Ion Implantation Technology held in ...
A study has been made of the passive film remaining over pits on stainless steel using a high resolution transmission electron microscope. Type 305 stainless steel was passivated in a borate buffer solution and pitted in ferric chloride. Passive films formed at 0.2 V relative to a saturated calomel electrode were found to be amorphous. Films formed at higher potentials showed only broad diffraction rings. The passive film was found to cover a remnant lacy structure formed over pits passivated at 0.8 V. The metallic strands of the lace were roughly hemitubular in shape with the curved surface facing the center of the pit.
Continuous freestanding SiC(Al) films were fabricated by melt spinning the aluminum-containing polycarbosilane (A-PCS) precursor. The results showed that the films contained #beta#-SiC crystals, #alpha#-SiC nano-crystals, C clusters and small amount of Al_4O_4C and Al_4SiC_4. The Al atoms in the films played important roles as both sintering aids and grain growth inhibitor. The PL spectrum showed a wide luminescence band from 320 nm to 440 nm, and the origin of PL centered at 385 nm might be related to the #alpha#-SiC nano-crystals using quantum size effects. The obtained films are expected to have important applications in MEMS for the environment of high temperature and optoelectronic devices.
Moss-Schottky plots and photoelectrochemical measurements were made on films formed at different potentials on AISI 304 stainless steel in a borate/boric acid solution, pH 9.2. The results allowed the determination of the semiconductive properties and band structure of the films, which account for the existence of two kinds of films depending on the formation potential. For potentials below 0 V (SCE), the results point out for a film with an inverse spinel structure constituted by Cr-substituted magnetite with two donor levels. Above 0 V only one donor level is detected, which should be Fe{sup 2 +} on tetrahedral sites.
Moss-Schottky plots and photoelectrochemical measurements were made on films formed at different potentials on AISI 304 stainless steel in a borate/boric acid solution, pH 9.2. The results allowed the determination of the semiconductive properties and band structure of the films, which account for the existence of two kinds of films depending on the formation potential. For potentials below 0 V (SCE), the results point out for a film with an inverse spinel structure constituted by Cr-substituted magnetite with two donor levels. Above 0 V only one donor level is detected, which should be Fe"2 "+ on tetrahedral sites.
The passive films formed on 316L stainless steel in various NaCl solutions have been investigated by capacitance measurements (Mott-Schottky). Pitting parameters have been determined using the galvano-kinetic polarisation method. The obtained results reveal the existence of a shallow and a deep donor level localised in the band gap of the semiconducting oxide film. These energy levels are due to iron ions in the tetrahedral and octahedral positions. It also appears that the participation of the deep donor level effects the electric field. The study developed allows us to compare characteristic parameters of the electronic structure of the passive film to those related to pitting susceptibility. (authors) 25 refs.
The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).
Heusler films with L2_1 and B2 structure are deposited simultaneously on amorphous carbon films, Si(100) surfaces, and in situ cleaved InAs(110) surfaces by coevaporation of Ni and the alloy MnIn. Morphology, structure, and stoichiometry are investigated with transmission-electron microscopy, electron diffraction, and X-ray spectroscopy. The almost perfect lattice match supports highly oriented growth of Ni_2MnIn on InAs, which is proven by electron diffraction under grazing incidence. The electrical resistivity of thin films on Si show metallic behavior. At temperatures of liquid helium point-contact Andreev reflection spectroscopy is performed on films grown on Si(100) and in situ cleaved InAs(110) surfaces yielding spin polarizations comparable to the ones of Fe, Ni, Co, and permalloy (Ni_8_0Fe_2_0).
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke ...
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke ...
In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.
This work aimed to develop a fast-dissolving film made of low dextrose equivalent maltodextrins (MDX) containing nicotine hydrogen tartrate salt (NHT). Particular attention was given to the selection of the suitable taste-masking agent (TMA) and the characterisation of the ductility and flexibility under different mechanical stresses. MDX with two different dextrose equivalents (DEs), namely DE 6 and DE 12, were selected in order to evaluate the effect of polymer molecular weight on film tensile properties. The bitterness and astringency intensity of NHT and the suppression effect of several TMA were evaluated by a Taste-Sensing System. The films were characterised in term of NHT content, tensile properties, disintegration time and drug dissolution test. As expected, placebo films made of ...
Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr{sub 2}O{sub 3} and FeCr{sub 2}O{sub 4} below the flat band potential of nickel oxide and were NiFe{sub 2}O{sub 4} above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.
Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr2O3 and FeCr2O4 below the flat band potential of nickel oxide and were NiFe2O4 above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.
The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.
Epitaxial films grown pseudomorphically on substrates provide a way to stabilise non-equilibrium structures of materials. Obviously, there always is a certain lattice misfit between substrate and film material in its bulk equilibrium structure. In the pseudomorphic regime, this misfit can either lead to the growth of films in a strained bulk structure or even yield structures that are not stable in the bulk. Large misfits do not necessarily imply large lateral stress. Theory can help to predict e.g. geometry, stress and magnetic properties of pseusomorphically grown metal films. In this work, we considered the fcc-bcc epitaxial Bain path of 3d, 4d, and 5d transition metals, which provides a reasonable description of tetragonally distorted films on substrates. We carried out density functional calculations in the implementation of the full potential local orbital program package ...
Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.
Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.
It is well known that a protective film is formed on the graphite negative electrode in ethylene carbonate (EC) electrolyte solution. This film is lithium-ion conductive and protects the decomposition of the electrolyte solution. In the present paper, the electrode/electrolyte interfaces in lithium-ion rechargeable batteries were characterized by three-dimensional complex impedance plots, whose axes are real, imaginary parts and time. The film resistance R {sub sei} and charge transfer resistance R {sub ct} were determined for negative electrodes in EC/ethyl methyl carbonate (EMC) electrolyte solution, and the formation mechanisms of the interfacial film were discussed. Furthermore, the contributions of vinylene carbonate and ethylene sulfite, which are added into the electrolyte solution for the film formation, were investigated.
It is well known that a protective film is formed on the graphite negative electrode in ethylene carbonate (EC) electrolyte solution. This film is lithium-ion conductive and protects the decomposition of the electrolyte solution. In the present paper, the electrode/electrolyte interfaces in lithium-ion rechargeable batteries were characterized by three-dimensional complex impedance plots, whose axes are real, imaginary parts and time. The film resistance R _s_e_i and charge transfer resistance R _c_t were determined for negative electrodes in EC/ethyl methyl carbonate (EMC) electrolyte solution, and the formation mechanisms of the interfacial film were discussed. Furthermore, the contributions of vinylene carbonate and ethylene sulfite, which are added into the electrolyte solution for the film formation, were investigated.
In this work, effects of coolant chemistry, including concentrations of chloride ions and ethylene glycol and addition of various ions, on corrosion of 3003 Al alloy were investigated by electrochemical impedance spectroscopy measurements and scanning electron microscopy characterization. In chloride-free, ethylene glycol-water solution, a layer of Al-alcohol film is proposed to form on the electrode surface. With the increase of ethylene glycol concentration, more Al-alcohol film is formed, resulting in the increase in film resistance and charge-transfer resistance. In the presence of Cl- ions, they would be involved in the film formation, decreasing the stability of the film. In 50% ethylene glycol-water solution, the threshold value of Cl- concentration for pitting initiation is within ...
Abstract Nanocomposites based on SnO2 with carbon scaffold were used as highly porous anode films on Ni substrates. The films were obtained by in situ deposition of the particles without any binder or excess carbon black avoiding any secondary treatment. Compared to similarly prepared uncoated SnO2 nanoparticles as well as conventionally prepared powder samples the capacity loss of the in situ deposited nanocomposite films is significantly reduced. Thus, this newly developed anode material combined with in situ film formation is a promising approach for high capacity anodes in Li-ion batteries. SEM-micrograph of a SnO2/C nanoparticle film.
In 16 female patients wick colpourethrocystography was performed directly successively with large-size films as well as medium-size films (intensifier fluorography). The area exposure products were measured by a dosemeter closely attached to the diaphragm and separately for radiography and fluorography, resp. Surface doses as well as organ doses were calculated according to Rosenstein. The average radiatin doses of the active bone marrow were 6.03 mGy for examination with large-size films and 1.27 mGy for fluorography; the average gonadal doses were 7.45 mGy and 1.56 mGy, resp. The portion of fluoroscopy in radiation exposure amounted to 14.8% in large-size film examination, but was 74.0% in medium-size examination. Thus the comparative results revealed a significant reduction of the patient's radiation dose by application of intensifier fluorography in colpourethrocystography.
In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.
Abstract:- Campylobacter jejuni-is the leading cause of bacterial diarrheal illness worldwide. Many strains are now becoming multidrug resistant. Apple-based edible films containing carvacrol and cinnamaldehyde were evaluated for bactericidal activity against antibiotic resistant and susceptible-C. jejuni-strains on chicken. Retail chicken breast samples inoculated with D28a and H2a (resistant strains) and A24a (a sensitive strain) were wrapped in apple films containing cinnamaldehyde or carvacrol at 0.5%, 1.5%, and 3% concentrations, and then incubated at 4 or 23 C for 72 h. Immediately after wrapping and at 72 h, samples were plated for enumeration of viable-C. jejuni. The antimicrobial films exhibited dose- and temperature-dependent bactericidal activity against all strains. Films with ...
Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T _s #<=# 450 deg. C were amorphous; while those produced at T _s_u_b = 500 deg. C were polycrystalline #alpha#-Fe_2O_3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the ...
Iron oxide films have been deposited on Si(100) substrates by chemical vapour deposition (CVD) of iron(III) tert-butoxide ([Fe(O "tBu)_3]_2) in the temperature range 350-450 deg. C. The precursor flux and substrate temperature were varied to control the phase composition, average grain size and film thickness. The nature of substrate and deposition temperature markedly influence the morphology and iron-oxygen stoichiometry in the CVD deposits. Phase transformations in iron oxide films were achieved through precise local and periodic heating of the films by interfering laser beams. The interaction of iron oxide films with short laser pulses (Nd:YAG, 355 nm) induced partial transformation of hematite (#alpha#-Fe_2O_3) to magnetite (Fe_3O_4) or magnetite to wuestite (Fe_1_-_xO), respectively. The phase characterization and morphology of the hematite and magnetite ...
The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the multilayered ...
Investigations of the properties of absorbed monolayers have received great experimental and theoretical attention recently, both because of the importance of surface processes in practical applications such as catalysis, and the importance of such systems to the understanding of the fundamentals of thermodynamics in two dimensions. We have adapted the composite bolometer technology to the construction of microcalorimeters. For these calorimeters, the adsorption substrate is an evaporated film deposited on one surface of an optically polished sapphire wafer. This approach has allowed us to make the first measurements of the heat capacity of submonolayer films of /sup 4/He adsorbed on metallic films. In contrast to measurements of /sup 4/He adsorbed on all other insulating substrates, we have shown that /sup 4/He on silver films occupies a two-dimensional gas phase over a broad range of coverages and ...
In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si ...
The total hemispherical emittance of an oxide film that formed on 6061-T6 aluminium alloy parts in the Tower Shielding Reactor-II at Oak Ridge National Laboratory was measured from 295 to 773 K using an emissometer and/or a calorimeter. The emittance of this film was critically needed for heat transfer calculations in a simulated loss-of-coolant accident of the reactor. X-ray diffraction analysis identified the film as boehmite (Al{sub 2}O{sub 3} {times} H{sub 2}O), which dehydrated to alumina (Al{sub 2}O{sub 3}) upon heating above 473 K. The measured emittances for the alumina film are in excellent agreement with published values for anodized aluminum films and for bulk alumina. Published values of the emittance of boehmite could not be found for comparison, but evidence is presented that some anodization processes for aluminum yield boehmite and not alumina ...
The formation and breakdown of the passive films on stainless steels are mainly controlled by ionic and electronic transport processes. Both these processes are in part controlled by the electronic properties of the oxide film. Consequently, it is vital to gain a detailed perception of the electronic properties of the passive films together with structural and compositional information for a comprehensive understanding of mechanisms behind passivity and localised corrosion. As a step towards this goal the passive films formed on two main austenitic stainless steels AISI 316L and AISI 304L in borate solution were characterised by in situ Raman spectroscopy and photocurrent spectroscopy coupled with electrochemical measurements. This revealed the formation of an Fe-Cr spinel as the dominant constituent in the passive films with more Cr enrichment in the oxide film ...
The formation and breakdown of the passive films on stainless steels are mainly controlled by ionic and electronic transport processes. Both these processes are in part controlled by the electronic properties of the oxide film. Consequently, it is vital to gain a detailed perception of the electronic properties of the passive films together with structural and compositional information for a comprehensive understanding of mechanisms behind passivity and localised corrosion. As a step towards this goal the passive films formed on two main austenitic stainless steels AISI 316L and AISI 304L in borate solution were characterised by in situ Raman spectroscopy and photocurrent spectroscopy coupled with electrochemical measurements. This revealed the formation of an Fe-Cr spinel as the dominant constituent in the passive films with more Cr enrichment in the oxide film ...
The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10{sup 20} cm{sup -3} and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10{sup 21} cm{sup -3} were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the ...
The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10"2"0 cm"-"3 and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10"2"1 cm"-"3 were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the ...
Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure ...
The growth of stoichiometric and non-stoichiometric silicon nitride films was studied experimentally on 100 mm silicon wafers by batch depositions from the dichlorosilane (SiH{sub 2}Cl{sub 2})-ammonia (NH{sub 3}) system in a hot-wall horizontal low pressure chemical vapor deposition (LPCVD) reactor. The growth kinetics were discussed in terms of the Langmuir adsorption isotherm. The kinetic parameters were determined by comparing the experimental data with a one-dimensional simulation model. The decomposition of NH{sub 3} at high temperatures was included in the simulation procedure. When the SiH{sub 2}Cl{sub 2}:NH{sub 3} ratios were greater than 1.5, a quantity higher than the thermodynamic critical values above which Si-rich nitride films begin to deposit, various SiN{sub x} films with x < 4/3 were obtained. The composition of the SiN{sub x} films was found to vary along the LPCVD reactor. The ...
Nylon 6 and nylon 66 films have been treated with aqueous sulfonated aromatic compound (SAC) solutions at concentrations ranging from 0.005 to 1.0 wt%. SAC uptakes at different treatment concentrations were measured and found to follow a BET isotherm. The surface morphologies of nylon film samples, including the original and SAC-treated films, have been characterized by atomic force microscopy (AFM). For untreated nylon 6 and nylon 66 films, AFM images show a randomly distributed fibrillar surface structure. Characteristic widths of fibrils in the nylon 66 and 6 films were 150-225 and 75-150 nm, respectively. For SAC-treated nylon films, the AFM images revealed that the surfaces of the films became covered with nodule-like features having a diameter range of 25-60 nm. AFM analysis provides evidence that SAC treatment deposited a surface ...
Graphical abstract: Ordered mesoporous organic-inorganic composite film has been achieved by sol-gel and spin-coating techniques. We believe that the mesoporous composite films have a potential application as a protect coating of bipolar plate material. Display Omitted Research highlights: ? Ordered mesoporous composite film was deposited on the 304 stainless steel. ? This composite film exhibited excellent protective performance in 0.5 M H_2SO_4. ? The film exhibited a high surface tension with water contact angle close to 90"o. - Abstract: The organic-inorganic composite film was deposited on the 304 stainless steel as bipolar plate material for proton exchange membrane fuel cells by spin-coating method. As shown by XRD, N_2 adsorption-desorption and TEM, the composite films exhibit ordered mesoporous structures. The corrosion tests in 0.5 ...
Passivity of aluminum (Al) alloy 3003 in air and in aqueous solutions without and with chloride ions was characterized by electrochemical measurements, including cyclic polarization, electrochemical impedance spectroscopy (EIS), localized EIS and potential of zero charge, Mott-Schottky analysis and secondary ion mass spectroscopy (SIMS) technique. Stability, pitting susceptibility and repassivation ability of Al alloy 3003 under various film-forming conditions were determined. Results demonstrated that passive films formed on 3003 Al alloy in air and in Na2SO4 solution without and with NaCl addition show an n-type semiconductor in nature. The passive film formed in chloride-free solution is most stable, and that formed in chloride-containing solution is most unstable, with the film formed in air in between. Pitting of Al alloy 3003 passivated both in air and in aqueous solutions is inevitable in the ...
Film boiling is the mode if boiling during which the hot surface is separated from the vaporizing liquid by a nearly continuous film vapor. Film boiling is usually considered a very undesirable boiling regime since it is a relatively quiet and inefficient mode of heat transfer, particularly as compared to nucleate boiling. It is customary to analyze the two-phase flow regime of laminar flow film boiling by assuming the two-phase flow regime of laminar flow film boiling by assuming an idealized vapor film flow characterized by a smooth liquid-vapor interface. However, during stable flow film boiling, the wavy nature of the liquid-vapor interface and its role in local heat and mass transport have been largely ignored. The vapor interface is rarely stationary. Interfacial waves may substantially augment the heat transfer rates throughout the ...
Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum at the interface ...
The emittance of aluminum components exposed to low-temperature aqueous solutions were required for thermal analysis of a Loss of Cooling Accident for the Savannah River Site production reactors. Experimental data for the thickness and emittance of oxide films formed under these conditions were collected and reviewed. Correlations were developed for the oxide film thickness and corresponding total hemispherical emittance. Film thickness and emittance were also measured for the specific conditions of interest in order to verify the predictions based on the literature data. After one year of exposure in 30deg C reactor moderator, the aluminum oxide film thickness is predicted to be 6.4 [mu]m[+-]10%; this value is relatively insensitive to exposure time. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental ...
The emittance of aluminum components exposed to low-temperature aqueous solutions were required for thermal analysis of a Loss of Cooling Accident for the Savannah River Site production reactors. Experimental data for the thickness and emittance of oxide films formed under these conditions were collected and reviewed. Correlations were developed for the oxide film thickness and corresponding total hemispherical emittance. Film thickness and emittance were also measured for the specific conditions of interest in order to verify the predictions based on the literature data. After one year of exposure in 30deg C reactor moderator, the aluminum oxide film thickness is predicted to be 6.4 #mu#m#+-#10%; this value is relatively insensitive to exposure time. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental ...
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also ...
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also ...
The effect of temperature (60-280{sup o}C) on the properties of the oxide films formed on Alloy 800 in 0.1 M NaCl and 0.1 M Na{sub 2}SO{sub 4} aqueous solutions was studied by in situ AC impedance spectroscopy and polarization in the Fe(CN{sub 6}){sup -3}/Fe(CN){sub 6}{sup -4} redox system. The anodic behavior under the same experimental conditions was examined by potentiodynamic polarization techniques. In both solutions the passive film was found to become more porous, and hence less protective, with increasing temperature. However, at temperatures above 150{sup o}C, the loss of film protectiveness is more pronounced in chloride solutions, in which pitting occurs. Pitting morphology was found to be strongly temperature dependent: isolated and deep pits were found up to 200{sup o}C whereas at higher temperatures a broad, shallow and more generalized type of attack was detected. No effect of temperature on the defect ...
In this study, the effects of 325nm wavelength ultraviolet light irradiation on pitting corrosion behavior of type 340 stainless steel in a neutral chloride solution are studied. Further, the change of passive film with the light irradiation is analyzed using x-ray photoelectron spectroscopy. The mains results obtained therefrom are stated below. Pitting potential can be shifted in noble direction by the ultraviolet light irradiation. The effect of ultraviolet light irradiation is ore prominent in the pitting corrosion process than that in the passive film formation. The result of the analysis in terms of the birth and death stochastic probability process shows that pitting corrosion rate is decreased remarkably by the ultraviolet light irradiation at the formation of passive film, while the repassivation is slightly expedited by the ultraviolet light irradiation. On the other hand, the repassivation rate is increased a ...
Electrodeposition of semiconducting iron oxide (Fe_2O_3) thin film was carried out from an alkaline sulphate bath. A 0.1 M ferrous sulphate (FeSO_4#centre dot#7H_2O) was complexed with 0.1 M citric acid. By addition of 1 N NaOH, pH of the solution was made alkaline (pH=9) and deposition of iron oxide (Fe_2O_3) thin films was carried out potentiostatically at room temperature (300 K). From cyclic voltametry (CV), electrochemical studies were carried out for deposition of iron oxide thin films. The XRD studies reveal that Fe_2O_3 with epsilon (#epsilon#) phase having monoclinic crystal structure is formed. By observing scanning electron microscope (SEM), it is seen that iron oxide films were homogeneous, uniform and well covered to surface of the substrate. Grain size was found to be in nanometers range from XRD analysis. The optical band gap of Fe_2O_3 thin film was estimated to be ...
In 1977 and 1978, Sandia National Laboratories, located in Albuquerque, New Mexico, and operated for the US Department of Energy (DOE), filmed a series of crash and fire tests performed on three casks designed to transport irradiated nuclear fuel assemblies. While the tests were performed to assess the applicability of scale and computer modeling techniques to actual accidents, films of them were quickly pressed into service by the DOE and nuclear utilities as proof'' to the public of the safety of the casks. In the public debate over the safety of irradiated nuclear fuel transportation, the films have served as the mainstay for the nuclear industry. Although the scripts of all the films were reviewed by USDOE officials before production, they contain numerous misleading concepts and images, and omit significant facts. The shorter versions eliminated qualifying statements contained in ...
The temperature effect on corrosion behaviors of PbCaSnCe alloy in 4.5 M H{sub 2}SO{sub 4} solution was investigated by using potentiodynamic curve, electrochemical impedance spectra (EIS), Mott-Schottky plot and photocurrent response methods. It was found that PbCaSnCe alloy was in passive state in sulfuric acid solution, a passive film can be formed on alloy surface. The compositions of passive films formed at 0.9 V for 2 h under different temperatures were detected by X-ray photoelectron spectroscopy (XPS). The results showed that the film resistance and the transfer resistance decreased with the increment of the solution temperature. Mott-Schottky analysis and the photocurrent response revealed that the passive film exhibited n-type semi-conductive character, the donor density of the passive film decreased with increasing the solution temperature. Photocurrent response revealed ...
Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.
Electronic properties of passive films formed on Fe at various applied potentials in pH 8.5 buffer solution were examined through the photocurrent measurement and impedance spectroscopy. Passive film formed on Fe at relatively low potentials was found to be r-FeOOH layer and internal r-Fe{sub 2}O{sub 3} layer. However, the r-FeOOH layer became unstable and disappeared at potentials below 400mV and hence may be an adsorbed layer. An electronic band structure model for the passive film of Fe was suggested on the basis of the spinel band model with involving two types of electronic excitation processes, i. e., the p-d and the d-d transition together. The effects of applied potential on the photocurrent behaviors of the passive film on Fe were explained appropriately by separating the photocurrent spectra depending on the transition type. The Mott-Schottky behavior for the passive film ...
In the region of annular liquid film-mist flow, the behavior of the droplets formed from the liquid film and the rate of formation are the subjects to be clarified in connection with the forecast of dry-out point, which becomes a problem in the region of high dryness such as reactor cooling system and steam generators. Many researches have been performed on such problem in vertical tubes, but the characteristics in horizontal flow have not yet been sufficiently clarified. This series of research is to clarify various characteristics, such as the velocity of vapor phase, the flow rate distribution of droplets, the formation and adhesion of droplets and the structure of liquid film, in the region of liquid film-mist flow, where liquid film exists on the bottom of a horizontal rectangular channel, and vapor flow is accompanied by droplets. In this study, by the measurement of the flow ...
In the region of annular liquid film-mist flow, the behavior of the droplets formed from the liquid film and the rate of formation are the subjects to be clarified in connection with the forecast of dry-out point, which becomes a problem in the region of high dryness such as reactor cooling system and steam generators. Many researches have been performed on such problem in vertical tubes, but the characteristics in horizontal flow have not yet been sufficiently clarified. This series of research is to clarify various characteristics, such as the velocity of vapor phase, the flow rate distribution of droplets, the formation and adhesion of droplets and the structure of liquid film, in the region of liquid film-mist flow, where liquid film exists on the bottom of a horizontal rectangular channel, and vapor flow is accompanied by droplets. In this study, by the measurement of the flow ...
Langmuir-Blodgett films have been made with 3-n-hexadecylpyrrole and 3-n-octadecylpyrrole monomers and copolymers with unsubstituted pyrrole made by chemical polymerization at the air-water interface on a subphase containing FeCl/sub 3/. Langmuir-Blodgett films consisting of mixtures of stearic acid and alkylsubstituted polythiophenes have also been made as bilayer films. The orientation of single and multilayer films on platinum substrates have been studied by Near Edge X-ray Absorption Fine Structure Spectroscopy which also gives information about charge transfer interactions between the aromatic groups and the metallic substrates. The alkylsubstituted pyrroles form highly ordered two-dimensional structures. FeCl/sub 3/ initiated copolymerization with unsubstituted pyrrole leads to a more disordered system. In the case of polythiophene-stearic acid bilayers, the stearic acid layers are highly ordered. ...
Since April, 1985, we have, in co-operation with the Fuji Film Co., Ltd., used Fuji Computed Radiography (FCR) in the diagnosis of spinal disorders. FCR is a new computed radiographic system which uses an energy-storage phosphorus panel called an ''Imaging Plate'' as an image sensor. The ''Imaging Plate'' can be used to obtain radiographs in exactly the same way as the screen-film combination used in conventional radiography; X-rays are exposed on the ''Imaging Plate'' instead of X-ray film in the conventional fashion, and then the ''Imaging Plate'' is calculated. The processed digital data from the scans is transformed into a picture by means of digital-to-analogue conversion. The pictures are always clear and beautiful. Plain films of the spine taken by FCR are even clearer, even in the cervicothoracic region, where it is usually difficult to obtain clear cervicothoracic films in ...
Type 440C stainless steel is a high-C, high-Cr martensitic steel used in applications requiring high hardness and wear resistance in combination with moderate corrosion resistance. Typical applications include precision aerospace bearings and critical components in computer disk drives. The properties of passive films formed on 440C steel were investigated using advanced electrochemical techniques with a view to establishing a method to measure film stability directly in the passivation baths. Electrochemical measurements were sensitive to the passive film properties and were able to quantify the effect of cooling rate on passive film stability. The techniques used included linear polarization, AC impedance, small amplitude cyclic voltammetry, and coulostatic transient measurements. These provided results that exhibited excellent agreement with the AC impedance technique providing the most information ...
The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to ...
The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature ...
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress ...
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to ...
Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm{sup -3} HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly enriched in chromium. Chloride ions are ...
Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm-3 HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly enriched in chromium. Chloride ions are ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the impurity concentration and resisitivity are minimum. The correlation between the ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between ...
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between ...
Objective: To evaluate the quality and usefulness of direct digital radiography system in roentgenogram of chest in clinical practice. Methods: 1000 cases of chest roentgenograms with digital radiography and high kV conventional radiography were selected for analysis by 3 senior radiologists. Results: 1. With digital radiography system, the quality of chest film was assessed as grade A in 50.6%, grade B in 38.5%, grade C in 10.9%, and no waste film. 2. With conventional high kV radiography, the quality of chest film was assessed as grade A in 41.1%, grade B in 44.1%, grade C in 13.3%, and waste film in 1.5%. The direct digital radiography was statistically superior to the conventional high kV radiography. 3. The fine structure of the lungs could be revealed in 100.0% of chest roentgenogram with direct digital radiograph system, which was significantly higher than that acquired with the conventional high ...
A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.
This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}
Thin films of La{sub 0.6}Ca{sub 0.4}CoO{sub 3} perovskite were deposited on nickel plates by thermal decomposition of the metal nitrates. The electrochemical activity of the films for oxygen evolution in KOH solutions (0.1-1 M) was investigated. The reaction order with respect to OH{sup -} ion was found to be around 0.7. The results correlate fairly well with a mechanism in which breaking of the intermediate metal-peroxide bond at the Co ion is the rate-determining step. (author) 4 figs., 4 refs.
Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.
The magnetization of ultrathin bcc Fe films (two and three monolayers) on MgO was measured and compared with the behavior predicted for a two-dimensional ferromagnet. The experiment indicated that no hysteresis was present in the magnetization. Instead, the magnetization at low temperature was affected by a marked field cooling effect. These observations lead to the conclusion that films of Fe on MgO of such thickness exhibit superparamagnetic behavior as if they were not entirely continuous. In contrast, films thicker than five monolayers exhibit a magnetic response close to that of bulk iron.
The effects of {alpha} particle irradiation on a passive film formed on a 304 type stainless steel are studied in situ. The experimental arrangement minimizes the radiolysis effects due to the electrolyte. Under irradiation, a modification of the electronic structure of the oxide layers is revealed by photo-electrochemistry and impedance measurements. The influence of irradiation on the corrosion resistance of the passive film is investigated. Comparing the rest potential and the breakdown potential respectively under and without irradiation, a drop in the passivity range under irradiation is shown. this is interpreted as a decrease in the corrosion resistance. (author).
The effects of #alpha# particle irradiation on a passive film formed on a 304 type stainless steel are studied in situ. The experimental arrangement minimizes the radiolysis effects due to the electrolyte. Under irradiation, a modification of the electronic structure of the oxide layers is revealed by photo-electrochemistry and impedance measurements. The influence of irradiation on the corrosion resistance of the passive film is investigated. Comparing the rest potential and the breakdown potential respectively under and without irradiation, a drop in the passivity range under irradiation is shown. this is interpreted as a decrease in the corrosion resistance. (author).
The capability of screen-film combinations of detection and representation of information is described by the detective quantum efficiency (DQE). The DQE may be calculated from the sensitivity, the gradient of the characteristic curve, the modulation transfer function and the Wiener spectrum. These parameters have been determined for fourteen screen-film combinations and the DQE's have been calculated. It is shown that the low frequency region the DQE does not depend on spatial frequency. This constant level of DQE is mostly dependent on the absorbance of the screens. Consequences from this fact, as well for the manufacturer as for the user of the screens, are discussed.
The capability of screen-film combinations of detection and representation of information is described by the detective quantum efficiency (DQE). The DQE may be calculated from the sensitivity, the gradient of the characteristic curve, the modulation transfer function and the Wiener spectrum. These parameters have been determined for fourteen screen-film combinations and the DQE's have been calculated. It is shown that the low frequency region the DQE does not depend on spatial frequency. This constant level of DQE is mostly dependent on the absorbance of the screens. Consequences from this fact, as well for the manufacturer as for the user of the screens, are discussed. (orig.).
LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.
Carbon nano tubes are easily produced in macroscopic quantities, however their characterisation and possible applications are still rather limited. We have developed a new method to make aligned nano tube films which open new opportunities, not only for basic research but also for eventual applications. With this method the tubes can be aligned either parallel or perpendicular to the surface. We give a short review of the microscopic properties of single tubes and the bulk properties of the aligned films. (author). 24 refs., 6 figs.
Experiments were conducted which established that the higher passivating capacity of Ni/sub 60/Nb/sub 40/ alloys in the amorphous state and higher efficiency of the anodic process of generation of chlorine (2 N NaCl + HCl to pH = 0) in comparison with the crystalline state are determined by higher homogeneity and density of the passive films formed on the amorphous alloy and by higher electron conduction which depends directly on the difference in the structure of the passive films formed on the alloys in the amorphous and crystalline states.
Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).
This report reviews the published literature on the anaerobic oxidation of iron in aqueous solutions which are of particular relevance to Swedish granitic groundwaters. The thermodynamics of iron corrosion in water are briefly considered. Following this the experimental data found in the literature are presented and discussed. Results were found for corrosion of iron in both pure water and solutions containing mineral salts. The literature work in the nature of the films formed on iron surfaces under anaerobic conditions is reviewed and the possible mechanisms of film formation are discussed. Conclusions are drawn on the factors most likely to influence and control film growth. 32 refs.
Systems MEMS sensors C11-20 Lifetime Distributions of Aluminum Electrolytic Capacitors C11-22 Adhesion Strength of Advanced Polymer Films for Flexible and Rigid...
Highly dispersed silver nanoparticles embedded in mesoporous thin films (MTFs) have been synthesized by modification of the interior surface of mesoporous silica with ethylenediamine moieties, which provided the coordination sites for the Ag ions, and subsequent reduction under hydrogen atmosphere. TEM observations show the mesoporous parent films have effectively controlled the growth of the synthesized silver nanoparticles. The composite films had an ultrafast nonlinear response time, as fast as 200 fs, and a third-order nonlinear optical susceptibility of 0.94??10?10 esu, which was enhanced by the local field enhancement effect that was present when the silver nanoparticles were embedded in the surrounding dielectric matrix. The origin of the ultrafast nonlinear response and the enhanc...
A highly sensitive and stable tris(2,2prime-bipyridyl)ruthenium(II) (Ru(bpy)32+) electrogenerated chemiluminescence (ECL) sensor was developed based on carbon nanotube (CNT) dispersed in mesoporous composite films of sol-gel titania and perfluorosulfonated ionomer (Nafion). Single-wall (SWCNT) and multi-wall carbon nanotubes (MWCNT) can be easily dispersed in the titania-Nafion composite solution. The hydrophobic CNT in the titania-Nafion composite films coated on a glassy carbon electrode certainly increased the amount of Ru(bpy)32+ immobilized in the ECL sensor by adsorption of Ru(bpy)32+ onto CNT surface, the electrocatalytic activity towards the oxidation of hydrophobic analytes, and the electronic conductivity of the composite films. Therefore, the present ECL sensor based on the CNT-...
... Second, in drag as a member of the all-girl band which provides his camouflage. And last as a fake oil millionaire - out to seduce Marilyn - played as a wonderful homage to Cary Grant. \\
This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...
... pr h-±rmt of im- mersion isotherme of VIMCH and VYHH which are film formers of v,,yl chloride-acetate co-r~polyrers. VMCH has excelleut r.Lr-dry ...
Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.
Three-dimensional porous Sn thin film electrodes were prepared by electroless deposition on copper foam, then its morphology and electrochemical property were studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), electrochemical cycling test and cyclic voltammetry (CV). The porous framework and micro-holes have shown a great structure advantage in restricting severe volume changes when the Sn thin film was employed as anode for lithium-ion battery. The film electrode of sample C with an initial capacity of 676 mAh g{sup -1} showed good cycle performance displayed by retaining a capacity of 313 mAh g{sup -1} after 100 cycles.
Experiments have been carried out in water at 355 C to study transport of oxygen and hydrogen (as deuterium) in growing corrosion films. Composition of the films was also examined in 2.9 Mev and 3.9 Mev /alpha/-particle backscattering experiments. Corrosion occurs predominantly by oxygen diffusion through the film via grain boundary or similar short circuit diffusion paths, to form fresh oxide at the oxide metal interface. Increasing grain size within thick pre-breakaway films contributes to a decrease in diffusivity. The rate transition results from the generation of new diffusion pathways in previously protective oxide. Unexpectedly high concentrations of deuterium were observed. 26 refs.
The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. ...
A widely used veterinary antibiotic, tetracycline (TC), has been incorporated in Langmuir-Blodgett (LB) films of dipalmitoylphosphatidic acid (DPPA) by means of two different procedures: co-transfer and incubation in solution. The resulting structures were characterized by means of contact angle and ellipsometric measurements. The presence of the antibiotic in the phospholipid film was evidenced by means of UV-Vis electronic absorption and infrared vibrational spectroscopy. The two sets of measurements unambiguously indicated the presence of the drug in the LB layer films obtained with both methods, although incubation led to a smaller content of immobilized tetracycline. In both cases, the drug was found to reside in the hydrophilic portion of the layers due to specific interactions of the dimethylamino group of the molecule with the polar head groups of the phospholipid.
A protective film has been developed on the surface of carbon steel in low chloride aqueous environment using a synergistic mixture of an environmentally friendly phosphonic acid, N,N-bis(phosphonomethyl) glycine (BPMG), and zinc ions. Impedance studies of the metal/solution interface indicated that the surface film is highly protective against the corrosion of carbon steel in the chosen environment. Potentiodynamic polarization studies showed that the inhibitor is a mixed inhibitor. X-ray photoelectron spectroscopic analysis (XPS) of the film showed the presence of the elements iron, phosphorus, nitrogen, oxygen, carbon, and zinc. Deconvolution spectra of these elements in the surface film showed the presence of oxides/hydroxides of iron(III), Zn(OH)2, and [Zn(II)-BPMG] complex. This infe...
Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural ...
P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.
... at compositions below -AlP 4 the films were still unstable, hydrolysing in room air, and the long term stability of higher aluminium phosphides is in ...
Purpose - This paper aims to discuss the procedures and methods developed at Washington State University to digitize and make accessible historic moving images. Design/methodology/approach - The paper describes the selection and the use of low-cost technologies to transfer analog film to digital formats. Issues related to the conversion, description, and online hosting of digital films are also addressed. Findings - Though the steps involved in digitizing film are not trivial, the benefits of access both for the public and archives staff outweigh the expense and labor involved. The procedures described in this paper involve low upfront costs and are sustained through cost recovery fees. Research limitations/implications - The focus of this paper is on managing, describing, and providing on...
Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)
... The phenol and cresylic acid stream is flashed in a thin film evaporator over a concentrated sulfuric acid mixture to remove pyridine type substances ...
Early failure of an induction-hardening carbon steel pipe, which was used to transport tailing slurry, was caused by pitting corrosion. The microstructure on the internal pipe surface layer was found being a mixture of martensite, pearlite and ferrite. In this work, the pitting corrosion behavior of each constitute in the microstructure of steel is investigated with electrochemical noise analyses; the electronic properties of passive films were studied with Mott-Schottky relationship. It is found that the passive films formed on the materials under investigation are highly disordered n-type semiconductors. The high-to-low pitting susceptibility is ferrite > martensite > pearlite. The pitting resistance is related to the semiconductive nature of the passive film formed on each constitute. The pitting susceptibility increases with the donor concentration in the passive films. (author)
Photoelectrochemical oxidation is a potentially interesting method for destroying toxic organic materials. We have studied the photoelectrocatalytic activity of TiO{sub 2} films made by thermal oxidation of titanium, low pressure chemical vapour deposition (LPCVD), and anodisation of titanium. Two model organic compounds have been investigated for photooxidation: methyl phosphonic acid (MPA) which is a nerve gas analogue and 4-chlorophenol (4-CP) which is a chlorinated aromatic compound considered a standard for the evaluation of the TiO{sub 2} / UV processes. In addition to photoelectrochemical characterisation the films have been characterised by profilometry, XRD, AFM, photocurrent spectroscopy and Raman microscopy. Correlations have been made between the physical properties of the thin films and their catalytic activities. The most catalytic sample of thermally oxidised titanium was prepared at 400 deg C, and the ...
Abstract Preparation of antibacterial alginate films incorporating extruded white ginseng (EWG) extracts was attempted. The antibacterial effect of EWG extract on six selected food pathogenic bacteria was compared with the effect of red ginseng (RG) and white ginseng (WG) extracts. The EWG was processed in a twin-screw extruder with feed moisture of 20% and barrel temperature of 115 and 130C. The data obtained by agar diffusion assay demonstrated that the film containing 1-g/mL of EWG at barrel temperatures of 115 (EWG-115) and 130C (EWG-130) exhibited stronger antibacterial activity against the four strains of bacteria than the other extracts RG and WG. All films sampled showed reduction in bacteria cell counts (log cycle) compared with the control. After 24-h of incubation, Pseudomonas a...
Several years ago, the AGARD Structures and Materials Panel selected ... flow separation appears to have occurred during the tests, and the angles of attack ...
Crystalline and non-crystalline iron oxide (#alpha#-Fe_2O_3) thin films were obtained by spray pyrolysis onto glass substrate at different temperatures. The results of X-ray diffraction showed that with increasing the deposition time, the film structure changed from non-crystalline to crystalline at the same substrate temperature. At different substrate temperatures and low deposition times (5 min), iron oxide appears almost in non-crystalline form. With rising the substrate temperature and deposition time, the crystallinity was improved. The effect of substrate temperature as well as deposition time on the optical features (absorption coefficient and bandgap) and optical constants of these films has been investigated. Optical constants of the films were determined from spectrophotometric measurement of reflectance and transmittance. Analysis of the results showed that, for non-crystalline iron oxide ...
The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and their interatomic ...
Nanocrystalline MnO thin film has been prepared by a pulsed laser deposition (PLD) method. The reversible lithium storage capacity of the MnO thin film electrodes at 0.125C is over 472 mAh g{sup -1} (3484 mAh cm{sup -3}) and can be retained more than 90% after 25 cycles. At a rate of 6C, 55% value of the capacity at 0.125C rate can be obtained for both charge and discharge. As-prepared MnO thin film electrodes show the lowest values of overpotential for both charge and discharge among transition metal oxides. All these performances make MnO a promising high capacity anode material for Li-ion batteries. (author)
The in-depth distribution of phases in c-BN films deposited by Ion Beam Assisted Deposition (IBAD) at two different ion energy values (300 and 600 eV) was investigated using the quantitative IR transmission measurements and the HREM technique. Whatever the value of the studied ion energies, the characteristic layered morphology of c-BN film is observed including the interfacial sp"2 zone between the substrate and the c-BN volume. In the case of 600 eV ion energy, this interfacial zone is less well-defined in comparison with 300 eV ion energy and the corresponding thickness is more important. Furthermore, the h-BN phase is more diluted within the c-BN film volume showing that the purest phase concentration of c-BN is found for the lowest ion energy, i.e., 300 eV.
Anthracene-bis-resorcinol is an interesting molecule as it forms a hydrogen-bonded network when guest molecules with weak polarity are included. Focused ion beam (FIB) was irradiated on a part of its amorphous film with low dose, and the film was exposed to the vapor of guest molecules. From fluorescence and AFM analyses of this film, it was found that no inclusion compound was formed in FIB irradiated area, i.e. FIB irradiation suppresses the ability to form the inclusion compounds. By utilizing this phenomenon, we succeeded in a microfabrication of relief structures consisting of inclusion compounds which has different fluorescence from its surrounding. Morphology, fluorescence, and IR absorption analyses indicated that hydroxyl or resorcin groups are damaged by ion beams, and consequently a formation of hydrogen-bonded networks, which play a role of a lattice caging guest molecules, becomes impossible.
The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.
The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).
Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.
Ultra-thin, uniform, pinhole-free solid polymer electrolyte films having a fixed carboxylic ester group of approximately 1 {mu}m thickness were prepared by polymerization of methyl acrylate and tris(2-methoxyethoxy)vinylsilane in a glow discharge plasma. The carboxylic ester group of the plasma polymer were transformed to lithium carboxylate groups by treatment with lithium iodide. This process give a single lithium ion conductive film. These solid polymer electrolyte films showed ionic conductivities of the order of 10{sup -8} S cm{sup -1} (10{sup 4} {omega} cm{sup 2} resistance per unit area) at room temperature. (orig.).
The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H{sub 2}SO{sub 4} at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the {sup 16}O(d,p) {sup 17}O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12{plus minus}2) 10{sup 15} O/cm{sup 2}. The cationic compositions of the passive films have been determined by {sup 4}He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5{plus minus}2)10{sup 15} at/cm{sup 2} is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of ...
The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H_2SO_4 at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the "1"6O(d,p) "1"7O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12#+-#2) 10"1"5 O/cm"2. The cationic compositions of the passive films have been determined by "4He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5#+-#2)10"1"5 at/cm"2 is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found ...
Passive films formed on Alloy UNS N06690 were investigated in simulated crevice chemistries. It was found the role of lead in corrosion processes is strongly dependent on the pH value of the testing solutions. At pH 1.5 the effect of lead is narrowly noticeable; while at pH 12.7, lead has a significant influence on the electrochemical performance of alloy UNS N06690. The lead alters the surface morphologies at both pH and account for higher hydroxide content in the surface film at pH 12.7. The lead incorporation hinders the formation of spinel oxides during the passivation in alkaline solution. Nanoindentation tests indicate a significant lead-induced degradation in the mechanical properties of passive films. The passivation degradation is attributed to detrimental effects of lead via interrupting the dehydration process and hindering the formation of protective layers on the alloy surface.
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
The passive films formed in stainless steels are thin and fine oxide films, a high corrosion resistance can be provided by these films. This study formed SiO2 protective coating on the substrate of SUS 304 stainless steels by chemical vapor deposition using TEOS-O3 system. Firstly, relations of substrate temperature and deposition rate of films, chemical composition, refractive index of films were investigated. Then, the corrosion resistance of SUS 304 stainless steels coated SiO2 films was examined by activation time and an anodic polarization curve in 1 kmol[center dot]m[sup -3] HCl solution. The results were obtained as follows. Thickness of SiO2 films linearly increases with time at the deposition temperature of 473 to 673 K. Si-OH bonds would disappear above the deposition temperature of 573 K, almost perfect SiO2 ...
The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of ...
Surface films on iron formed in methanol solutions containing various amounts of water with or without 0.1 kmol/m{sup 3} LiClO4 have been analyzed by in-situ ellipsometry and ex-situ XPS. It was found that surface films having refractive indices n2 and absorption coefficients k2 in the range of 1.8-2.2 and 0.25-0.3, respectively, are formed on iron at potentials of the passive state. The values of n2 and k2 for passive films on iron obtained in the methanol are smaller than those of passive films formed in aqueous solutions. The refractive index n2 of the surface film on iron in the methanol became larger with increasing water or dissolved oxygen content. In the deaerated methanol with the water content less than 0.07%, a surface film having a refractive index of 1.7 was formed on iron, and XPS spectrum of this film showed a spectrum which ...
The kinetics of the electropolymerization of 3-amino-1,2,4-triazole on a brass substrate in alkaline solution containing methanol was investigated using cyclic polarization, chronoamperometry, electrochemical impedance techniques and scanning electronic microscopy. The polymeric film was prepared by successive cycles of potential of a 60Cu-Zn electrode between 0 and 1.6 V. During the second cycle, the oxidation peak of the monomer disappears indicating the formation of the insulating film. We have also shown that the monomer oxidation reaction is essentially irreversible and controlled by a diffusion process. The protective effect of the film formed on brass has been studied in a 3%NaCl and 3%NaCl + S{sup 2-} solution. The results showed important inhibition efficiency, about 96% for 4 h of testing time.
The kinetics of the electropolymerization of 3-amino-1,2,4-triazole on a brass substrate in alkaline solution containing methanol was investigated using cyclic polarization, chronoamperometry, electrochemical impedance techniques and scanning electronic microscopy. The polymeric film was prepared by successive cycles of potential of a 60Cu-Zn electrode between 0 and 1.6V. During the second cycle, the oxidation peak of the monomer disappears indicating the formation of the insulating film. We have also shown that the monomer oxidation reaction is essentially irreversible and controlled by a diffusion process. The protective effect of the film formed on brass has been studied in a 3%NaCl and 3%NaCl+S2- solution. The results showed important inhibition efficiency, about 96% for 4h of testing ...
Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.
Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.
BackgroundThe National Cancer Institute has concluded that exposure to smoking in movies causes adolescent smoking and there are similar results for young adults.Full Text Available
The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).
Concentration profiles of passive films formed on electrolytically anodized niobium and niobium-base alloys are obtained by Auger Electron Spectroscopy with simultaneous ion beam etching. The alloys investigated include 5Zr-Nb, 3Zr-10Ti-Nb, 2.5Zr-2W-Nb, and 1Zr-5Mo-5V-Nb. Experiments demonstrate that AES is among the most fascinating techniques for solving various characterization problems related to the structure and composition of the thin films formed by anodization. Data presented supports evidence that combined anodic and cathodic movements take place during film growth. 11 figures.
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...
We have employed Environmental Scanning Electron Microscopy (ESEM) and Energy Dispersive X-ray (EDX) analysis to study the microstructural evolution of acrylic latex stabilised with a novel polysaccharide derived from agricultural waste. The analysis revealed that the micro structure of the latex in the 'wet' state consists of individual particles and clusters. Upon evaporation a discontinuous film is formed, with voids present within its structure, which is inconsistent with the conventional descriptions of film formation. Further ESEM examination of 'dry' specimens revealed that aging resulted in the formation of dendritic structures on the surfaces of the latex films, which EDX analysis confirmed to have been formed via crystallisation of salt. The experimental evidence suggests that the clusters, which are part of the structure of the latex, may act as nucleation centres that would ...
A new thin film manufacturing method is established to add a function to glass material surface, as a new material technology which harmonizes with global environment, and is suitable for resource re-utilization and energy conservation. It is intended to develop a leading technology to promote recycling of colored glasses by applying this technical method to colored glasses. Fiscal 1998 has implemented subsequently to fiscal 1997 the following subjects in the three research items composed of a new manufacturing method of functional thin films, application of the functional thin films to colored glasses, and the comprehensive investigative studies: establishment of an industrial manufacturing method for color coating liquid and evaluation of basic characteristics of the colored functional thin films, optimization of element technology for photo-sensitive gel films by means of ...
Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...