WorldWideScience
1

Slide rings made of an SiC/silicide composite; Gleitringe aus einem SiC/Silicid-Verbundwerkstoff  

Energy Technology Data Exchange (ETDEWEB)

The objective of the project was to develop an infiltration material based on SiC that should have improved corrosion resistance and should permit higher operating temperatures. From a variety of tested doping agents, zirconium silicide and molybdenum proved to be the most appropriate agents. The respective infiltration materials permit a combination of advantages of the SSiC with those of the SiSiC. Silicide SiC, analogous to the SiSiC, is almost nonshrinking, and above all is more corrosion-resistant than SiSiC in the alkaline regime, due to the replacement of free silicon by silicide phases. The operating temperature of the molybdenum-base variant is 1600 C. (orig./CB) [Deutsch] Ziel des Vorhabens war die Entwicklung eines Infiltrationswerkstoffes auf SiC-Basis mit verbesserter Korrosionsbestaendigkeit und hoeherer Einsatztemperatur. Aus einer Vielzahl von getesteten Dotierungsmoeglichkeiten ...

1997-12-31

3

The ternary silicide ZrPd{sub 3}Si{sub 3}, a stacking variant of the {alpha}-FeSi{sub 2} and Re{sub 3}B structure types  

Energy Technology Data Exchange (ETDEWEB)

The ternary zirconium palladium silicide ZrPd{sub 3}Si{sub 3} has been synthesized by arc-melting of the elemental components. It adopts a new structure type and crystallizes in the orthorhombic space group Cmcm with a = 3.8127(4){angstrom}, b = 15.551(1){angstrom}, c = 7.0390(5){angstrom}, and Z = 4 (Pearson symbol oC28). The structure can be regarded as being built up of Re{sub 3}B-type slabs of composition Pd{sub 3}Si alternating with {alpha}-FeSi{sub 2} slabs of composition ZrSi{sub 2}. Notable features include the presence of Si{sub 2} pairs, square pyramidal and tetrahedral coordination of Pd centers by Si atoms, an unusual distorted cubic coordination of the Zr atoms by the Si{sub 2} pairs, and an extensive network of Zr-Zr, Zr-Pd, and Pd-Pd metal-metal bonds. ZrPd{sub 3}Si{sub 3} is weakly metallic with a room-temperature resistivity of 1.7 x 10{sup {minus}3} {Omega} cm. Extended Hueckel band structure calculations confirm the metallic ...

1999-11-01

4

Development of zirconium alloys. Part II  

Science.gov (United States)

A number of alloys of zirconium have been investigated as part of a program aimed at improving the high-temperature tensile and creep strength of zirconium. These alloys include aluminum, beryllium, lead, magnesium, molybdenum, niobium, tantalum, tin, titanium, tungsten, vanadium, and zinc, binary and ternary alloys. The data indicate that aluminum, lead, molybdenum niobium, tin, titanium, tungsten, and vanadium can be used successfully to harden zirconium, and that aluminum, tin, titanium, and vanadium are particularly effective in maintaining the strength of zirconium at elevated temperatures.

1952-01-02

5

TmPd_2Si_2 and YbPd_2Si_2. Crystal fields and intermediate valence  

International Nuclear Information System (INIS)

... low temperature moessbauer effect palladium silicides thulium silicides thulium

6

Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor ...  

Science.gov (United States)

indications of the formation of palladium silicides. 2, 4. It has been reported .... At room temperature, palladium silicides formed in a relatively narrow interface ...

7

Acrobat Distiller, Job 7 - GLTRS - NASA  

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

8

Principal component analysis as a method for silicide investigation with Auger electron spectroscopy  

Energy Technology Data Exchange (ETDEWEB)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA.

1983-10-16

9

Principal component analysis as a method for silicide investigation with Auger electron spectroscopy  

International Nuclear Information System (INIS)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA. (author).

10

Mechanism of zirconium complexing with biphenyl mono- and biscatecholylazo derivatives  

Energy Technology Data Exchange (ETDEWEB)

The complex formation of zirconium with biphenyl mono- and biscatecholyazo derivatives has been studied spectrophotometrically. The composition of the complexes, form and charge of complex-forming zirconium ions have been established. A procedure is suggested for calculation of molar absorptivities and stability constants for each of the complexes formed simultaneously in the system. Possible complex formation schemes have been studied. The data obtained were used to develop a spectrophotometric method of determining zirconium in the presence of large amounts of copper.

1982-05-01

12

Interaction of silicides in the Pd - Mo - Si ternary system  

International Nuclear Information System (INIS)

... chemical reactions high temperature lattice parameters microhardness

13

AN AES/XPS STUDY OF THE CHEMISTRY OF PALLADIUM ...  

Science.gov (United States)

... AT THE INTERFACE, A THIN OXIDE LAYER IS OBSERVED ALONG WITH POSSIBLE PALLADIUM SILICIDES. PALLADIUM ...

1981-02-01

14

Study on the use of zirconium phosphate for radioactive waste treatment  

International Nuclear Information System (INIS)

Zirconium phosphate was one of the earliest inorganic ion-exchange suggested for removing strontium and cesium from aqueous nuclear waste. This paper studied ionic exchange to remove Cs-137 and Sr-90 by using different cationic of zirconium phosphate. In this case the parameters studied were the effect of temperature and ion concentration to percent up take and distribution coefficients. It is also conducted the study on column experiments to determine the breakthrough curves for Cs-137 and Sr-90. The result showed the potential of use of zirconium phosphate in radioactive waste treatment. (author)

1998-12-01

15

Studies about oxygen accumulation in palladium silicide formed at Pd/a-Si interface  

International Nuclear Information System (INIS)

... 194 p. auger electron spectroscopy decomposition deposition interfaces oxygen

1986-04-23

16

Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation  

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

2007-09-25

17

7 - NASA Technical Reports Server  

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

18

Synthetic inorganic ion exchangers. XVI. Electrochromatographic separations of metal ions on zirconium tungstate-impregnated paper  

Energy Technology Data Exchange (ETDEWEB)

The electrochromatographic behavior of 25 metal ions on zirconium tungstate-impregnated papers is described. Six background electrolytes were used. On the basis of the differential mobilities of metal ions which depend on the ion-exchange properties of zirconium tungstate and the nature of complex formation with the electrolytes, some important binary and ternary separations have been achieved.

1980-03-01

19

Application of Pd silicide in the process of silicon detectors  

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

1990-04-01

20

An interface - marker technique applied to the study of metal silicide growth  

International Nuclear Information System (INIS)

An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, Pd and Pt. (orig.).

21

Zirconium for superior corrosion resistance  

International Nuclear Information System (INIS)

Zirconium is a transition element located along with sister elements titanium and hafnium in Group IVB of the periodic table. It is grayish white metal, with a density somewhat less than carbon steel. Zirconium is the ninth most common metallic element in the earth's crust, and is more abundant than zinc, lead, nickel, or even copper. Zirconium is exceptionally resistant to corrosion by many common acids and alkalis. It is resistant to most organic acids, such as formic, acetic, lactic, and oxalic acids. It also has a high resistance to localized forms of corrosion, such as pitting, crevice corrosion, and stress corrosion cracking. Its corrosion resistance is caused by the formation of a dense, tenaciously adherent, chemically inert oxide film on the surface. This oxide film protects the base metal from both chemical and mechanical attack at temperatures up to about 400 C (750 F). This article describes ...

22

Redistribution of implanted dopants after metal-silicide formation  

Science.gov (United States)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

1978-12-01

23

Redistribution of implanted dopants after metal-silicide formation  

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

24

Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode  

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

2010-01-01

25

Flame propagation characteristics and flame structures of zirconium particle cloud in a small-scale chamber  

British Library Electronic Table of Contents (United Kingdom)

Flame propagating through zirconium particle cloud in a small-scale vertical rectangle chamber was investigated experimentally. In the experiments, the zirconium quoted 99% purity was used and the diameter of particles was distributed 1?22 ?m. The zirconium dust was dispersed into the chamber by air flow and ignited by an electrode spark. A high-speed video camera was used to record the images of the propagating flame. Micro-thermocouples, schlieren optical system and microscopic lens were used to obtain temperature profiles and flame structure, respectively. Based on the experimental results, flame propagation characteristics and flame structure of zirconium particle cloud were analyzed. The propagation velocity of the flame is quite slow in the initial 14 ms and then accelerates to maxim...

2010-01-01

26

Formation kinetics and work function tuning of Pd_2Si fully silicided metal gate  

International Nuclear Information System (INIS)

The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in the opposite direction ...

2007-04-01

27

Tracing of salicylic acid additive during precipitation of zirconium  

International Nuclear Information System (INIS)

This paper presents the results of experimental study carried out to know whether the salicylic acid used as an additive during the precipitation of zirconium using ammonium hydroxide solution goes into the filtrate, remains in the hydrated zirconia or gets distributed between the both under the ambient conditions of precipitation. Keeping its simplicity and amenability to adopt on a routine basis, spectrophotometric method has been chosen for the purpose among the many methods available and the problems associated in determining salicylic acid in the presence of zirconium and the medial measures to circumvent the same have been brought out in detail. (author)

2011-02-22

28

The application of platinum-silicide anode layer to decrease the static and turn-off losses in high-power P-i-N diode  

Energy Technology Data Exchange (ETDEWEB)

The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.

2003-06-02

29

Summary on performance study of corrosion resistance of zirconium alloys  

International Nuclear Information System (INIS)

Zirconium-base alloys are used primarily as fuel cladding material and other core structure material in water cooled nuclear power reactors. Main research achievements and problems about corrosion of zirconium alloys are reviewed; the present theories and challenge are summarized. In the 1980s, great progress had been made towards correlating alloy composition, microstructure and irradiation with corrosion resistance. In the 1990s, main researches are focused on exploring actual mechanism of corrosion, optimizing both alloy composition and microstructure in order to minimize the fuel cycle costs through burnup optimization.

30

Pitting corrosion of zirconium and hafnium  

Energy Technology Data Exchange (ETDEWEB)

The initiation and inhibition of pitting corrosion on zirconium and hafnium in aqueous solutions have been investigated by potentiodynamic, potentiostatic and galvanostatic measurements at 25/sup 0/C. Effects of Cl/sup -/, Br/sup -/and I/sup -/ have been examined over a range of salt concentrations and pH. All three halide ions cause pitting attack on the two metals, but this may be inhibited by other anions. The results show that hafnium is more easily protected against pitting than is zirconium. The data are treated by the Butler-Volmer equation to yield more information about the mechanisms of the pitting corrosion.

1988-02-01

31

Studies about oxygen accumulation in palladium silicide formed at Pd/a-Si interface  

International Nuclear Information System (INIS)

Portuguese 1986. p. 186. Brazil Achete, CA Rio de Janeiro Univ. (Brazil).

1986-04-23

32

Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides  

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

33

SURFACE AND INTERFACE PROPERTIES OF PdCr/SiC SCHOTTKY DIODE GAS ...  

Science.gov (United States)

The formation of palladium silicides near the interface may decrease hydrogen solubility at the effective metal/semiconductor ...

34

Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. Large area uniform growth of Si layer by solid phase epitaxy (II). Final report  

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

35

Evaluation method for corrosion resistance of zirconium alloy  

International Nuclear Information System (INIS)

The present invention concerns a method of evaluating corrosion resistance of a zirconium alloy easily and in a short period of time. An anode polarization curve of the zirconium alloy is measured to obtain an anode polarization curve expressed by logarithm. The curve is converted to a potential-current density curve expressed by absolute values. The peak area in the curve of the converted potential-current density is indicated by numerical values. Further, the corrosion resistance of the zirconium alloy is evaluated based on the peak area converted into the numerical values as a reference. This method is based on the finding that the peak area has a close relation with nodular corrosion resistance, and the corrosion resistance can be judged with respect to a specific zircaloy-2. (T.M.).

1993-03-26

36

8 - NASA Technical Reports Server  

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

37

X-ray diffraction studies of palladium silicide thin films  

Energy Technology Data Exchange (ETDEWEB)

The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.

1985-01-01

38

Study of complexing reactions and ligand exchange of zirconium and hafnium tetrachlorides with substituted derivative of O-naphthoquinonediazide  

Energy Technology Data Exchange (ETDEWEB)

Using the PMR method the interaction of zirconium and hafnium tetrachlorides with tri.tet.butylphenyl ester of 1,2- naphthoquinonediazide (2)-5-sulfonic acid is studied. The formation of MCl/sub 4/xNQD complexes is established, the equilibrium constants and thermodynamic parameters of complexing reaction are determined. The presence of rapid ligand exchange, proceeding according to associative mechanism, is detected. The rate constants and activation energies of the exchange reaction are calculated.

1981-11-01

39

Study of complexing reactions and ligand exchange of zirconium and hafnium tetrachlorides with substituted derivative of O-naphthoquinonediazide  

International Nuclear Information System (INIS)

Using the PMR method the interaction of zirconium and hafnium tetrachlorides with tri.tet.butylphenyl ester of 1,2- naphthoquinonediazide (2)-5-sulfonic acid is studied. The formation of MCl_4xNQD complexes is established, the equilibrium constants and thermodynamic parameters of complexing reaction are determined. The presence of rapid ligand exchange, proceeding according to associative mechanism, is detected. The rate constants and activation energies of the exchange reaction are calculated.

40

Radiochromatographic separation of scandium(III) with inorganic ion exchanger zirconium phosphosilicate  

International Nuclear Information System (INIS)

A method has been developed for the adsorption of Sc"I"I"I employing inorganic ion exchanger zirconium phosphosilicate by batch method. Effects of various parameters have been evaluated on the percentage adsorption of Sc"I"I"I. Separation of Sc"I"I"I from various other elements is standardized. (author)

1998-03-01

41

Plasma deposition of sealing coatings based on zirconium dioxide  

International Nuclear Information System (INIS)

Technology of plasma sputtering, structure and properties of zirconium dioxide coatings were studied. Necessity of void number increase to enhance coating heat-resistance is shown. Optimal powder particle size (20-60 #mu#m) providing optimal coating porosity was determined. Weight part of stabilizating oxide (Y_2O_3) in ZrO_2 for formation in coating of microcracks serving as barriers for macro-cracks propagation was determined.

1992-01-01

42

Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering  

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

43

Kinetics of chlorination of phosphates of actinides and fission elements in chloride melts. II. Zirconium phosphates  

Energy Technology Data Exchange (ETDEWEB)

The kinetics of the reaction of zirconium phosphates with carbon tetrachloride in sodium and potassium chloride melt as well as the effect of temperature, gas flow, solubility and weight of the solid phase of the phosphate, and stirring of the melt on the chlorination rate has been studied. The kinetic parameters of the reaction (rate constants, activation energy, etc.) have been calculated.

1987-07-01

44

Cerium moment collapse in ternary silicides CePd[sub 2[minus][ital x  

Energy Technology Data Exchange (ETDEWEB)

Cerium [ital L][sub 3] XANES (x-ray-absorption near-edge-structure) spectra were analyzed to separate Ce moment contributions and mixed valence (MV) in complex magnetic silicides CePd[sub 2[minus][ital x

1994-05-01

45

Analysis of titanium and zirconium in red mud with energy dispersive x-ray spectrometry  

Energy Technology Data Exchange (ETDEWEB)

An energy dispersive x-ray fluorescence technique was used for the determination of Titanium (Ti) and Zirconium (Zr) in red mud by using a standard addition method. An annular {sup 241}Am source is employed for excitation of K shells of elements. 13 refs., 2 figs., 1 tab.

1996-11-01

46

Electrochemical roles of precipitates on uniform corrosion and hydrogen pickup of zirconium alloys, 1. Roles on corrosion  

Energy Technology Data Exchange (ETDEWEB)

Substantial roles of precipitates such as Zr-Fe-Cr type intermetallic compounds on uniform corrosion and hydrogen pickup of zirconium alloys in pure water autoclave tests were investigated from an electrochemical point of view. This paper describes the roles on corrosion. A corrosion test on precipitate-containing and precipitate-free materials made from pure zirconium and a small quantity of iron and chromium, rest potential measurements on an intermetallic compound of Zr(FeCr){sub 2} and zirconium matrix, and a galvanic coupling test of those were performed. Results showed that corrosion behavior of zirconium alloys could be attributed to the electrochemical properties of intermetallic compounds precipitated in each alloy. Namely, the cathodic and anodic polarization characteristics were associated with anodic protection provided by the precipitates on the alloys and the precipitates degradation in ...

2000-07-01

47

Electrochemical roles of precipitates on uniform corrosion and hydrogen pickup of zirconium alloys, 1. Roles on corrosion  

International Nuclear Information System (INIS)

Substantial roles of precipitates such as Zr-Fe-Cr type intermetallic compounds on uniform corrosion and hydrogen pickup of zirconium alloys in pure water autoclave tests were investigated from an electrochemical point of view. This paper describes the roles on corrosion. A corrosion test on precipitate-containing and precipitate-free materials made from pure zirconium and a small quantity of iron and chromium, rest potential measurements on an intermetallic compound of Zr(FeCr)_2 and zirconium matrix, and a galvanic coupling test of those were performed. Results showed that corrosion behavior of zirconium alloys could be attributed to the electrochemical properties of intermetallic compounds precipitated in each alloy. Namely, the cathodic and anodic polarization characteristics were associated with anodic protection provided by the precipitates on the alloys and the precipitates degradation in the ...

2000-07-01

48

Analysis of semiconductor structures by nuclear and electrical techniques. Final technical report  

Science.gov (United States)

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra ...

1978-06-01

49

Solid state diffusion in metal silicides  

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby ...

50

Marker experiments in growth studies of Ni_2Si, Pd_2Si, and CrSi_2 formed both by thermal annealing and by ion mixing  

International Nuclear Information System (INIS)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni_2Si, while Si is the diffusing species in CrSi_2. In Pd_2Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

51

Marker experiments in growth studies of Ni/sub 2/Si, Pd/sub 2/Si, and CrSi/sub 2/ formed both by thermal annealing and by ion mixing  

Energy Technology Data Exchange (ETDEWEB)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

1985-08-15

52

Fuel-cycle cost comparisons with oxide and silicide fuels  

Energy Technology Data Exchange (ETDEWEB)

This paper addresses fuel cycle cost comparisons for a generic 10 MW reactor with HEU aluminide fuel and with LEU oxide and silicide fuels in several fuel element geometries. The intention of this study is to provide a consistent assessment of various design options from a cost point of view. Fuel cycle cost benefits could result if a number of reactors were to utilize fuel elements with the same number or different numbers of the same standard fuel plate. Data are presented to quantify these potential cost benefits. This analysis shows that there are a number of fuel element designs using LEU oxide or silicide fuels that have either the same or lower total fuel cycle costs than the HEU design. Use of these fuels with the uranium densities considered requires that they are successfully demonstrated and licensed.

1982-01-01

53

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis  

Energy Technology Data Exchange (ETDEWEB)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

2006-06-29

54

Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis  

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

2006-06-29

55

Application of polycrystalline diffusion barriers  

International Nuclear Information System (INIS)

Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi_2) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability ...

56

The Use of Zirconium and Feldspathic Porcelain in the Management of the Severely Worn Dentition: A Case Report  

UK PubMed Central (United Kingdom)

The management of the interim phase of a complete oral rehabilitation in patients with severely worn dentition is often challenging due to the loss of occlusal vertical dimension, loss of tooth structure,...Full Text Available

2009-01-01

57

Rutherford backscattering study of the oxidation of palladium silicide on amorphous silicon substrates  

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering spectra (RBS) showing the ...

58

Physical characterization of a new composition of oxidized zirconium-2.5wt% niobium produced using a two step process for biomedical applications  

British Library Electronic Table of Contents (United Kingdom)

Zirconium and particularly Zr-2.5wt%Nb (Zr2.5Nb) alloy are useful for engineering bearing applications because they can be oxidized in air to form a hard surface ceramic. Oxidized zirconium (OxZr) due to its abrasion resistant ceramic surface and biocompatible substrate alloy has been used as a bearing surface in total joint arthroplasty for several years. OxZr is characterized by hard zirconium oxide (oxide) formed on Zr2.5Nb using one step thermal oxidation carried out in air. Because the oxide is only at the surface, the bulk material behaves like a metal, with high toughness. The oxide, furthermore, exhibits high adhesion to the substrate because of an oxygen-rich diffusion hardened zone (DHZ) interposing between the oxide and the substrate. In this study, we demonstrate a two step pro...

2011-01-01

59

Osseointegration of zirconia implants: an SEM observation of the bone-implant interface  

UK PubMed Central (United Kingdom)

BackgroundThe successful use of zirconia ceramics in orthopedic surgery led to a demand for dental zirconium-based implant systems. Because of its excellent biomechanical characteristics,...Full Text Available

60

Laser hardening of titanium-zirconium alloy  

International Nuclear Information System (INIS)

The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.

61

LITERATURE SURVEY OF THE CORROSION BEHAVIOR OF TANTALUM, ZIRCONIUM, AND TITANIUM  

Science.gov (United States)

The corrosion behavior of Ta, Ti, and Zr in inorganic acids, bases, chlorides and miscellaneous salts, waters and gases, and organic acids and miscellaneous organic chemicals is summarized. (W.L.H)

1955-02-23

62

Electronic and Interfacial Properties of Pd/6H-SiC Schottky Diode ...  

Science.gov (United States)

and palladium silicides (Pd,Si) with a total. AES intensity ratio of Pd to Si of 35/65. Scanning Electron Microscopy. (SEM') of the Pd region shows that ...

63

Annealing behavior of radiation damages in metal-silicides  

International Nuclear Information System (INIS)

The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).

64

Activation calculations using an expanded data base  

Energy Technology Data Exchange (ETDEWEB)

Using an expanded nuclear data base, the activation of nitrogen, aluminum, iron, nickel, copper, zirconium, niobium, molybdenum, tungsten, and lead were calculated for the first wall positions of the STARFIRE and MARS conceptual fusion reactors.

1986-04-01

65

Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)  

Energy Technology Data Exchange (ETDEWEB)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

1982-07-09

66

Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)  

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

67

Investigating of composition, structure and properties of Si modification under variable dose ions implantation influence  

International Nuclear Information System (INIS)

Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation ...

68

Impact of palladium silicide formation on the catalytic properties of Pd/SiO2 catalysts in liquid-phase semihydrogenation of phenylacetylene  

British Library Electronic Table of Contents (United Kingdom)

Palladium silicide was formed on the sol-gel derived SiO2 supported Pd catalysts prepared by ion-exchange method (Pd/SiO2-SG-ion). However, the catalysts exhibited superior performances than commercial SiO2 supported ones in liquid-phase semihydrogenation of phenylacetylene. It was probably due to an inhibition of a product of styrene, which is adsorbed on the surface of Pd, more strongly on Pd/SiO2-SG in which Pd is electron-deficient as shown by larger binding energy from XPS results.

2007-01-01

69

A kinetic and mechanistic study of the oxidation of silicon- and thin metal silicide layers  

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy was shown by metal ...

70

Microstructural stability on aging of an #alpha# + #beta# titanium alloy: Ti-6Al-1.6Zr-3.3Mo-0.30Si  

International Nuclear Information System (INIS)

The development of the microstructure on aging of an (#alpha# + #beta#) type titanium alloy containing 6Al-1.6Zr-3.3Mo-0.3Si (VT9) (in weight percent) has been studied. The #beta#-transus temperature of this alloy is approximately 1243 K. Solution treatment in the #beta#-phase field of the alloy followed by quenching in water at room temperature resulted in the formation of a single-phase martensite structure. The martensitic structure was confirmed to be orthorhombic (#alpha# double-prime) using X-ray diffraction. The water-quenched (WQ) specimens were subjected to aging treatments at temperatures of 823, 873, and 973 K for various lengths of time. Aging at 823 K for times between 24 and 100 hours did not bring about any noticeable change in the microstructure. Aging at 823 K for 200 and 300 hours resulted in the heterogeneous precipitation of s_2 silicide particles and thin films of #beta# sandwiched between the interplatelet boundaries of martensite. Electron ...

71

Joining of zirconium alloys  

International Nuclear Information System (INIS)

Alloys of zirconium are widely used in various core components of power reactors. Nuclear assemblies require high degree of reliability and integrity for performing in radiation and corrosive atmosphere. The hostile environments of reactor core and inaccessibility for repairs make it mandatory to select only those joining techniques which produce not only superior quality but are also amenable to NDT methods and such other techniques which ensure acceptable performance. The author has worked on various types of welding of zirconium alloys for different applications. Modern techniques in electron beam (EB) welding, resistance welding, GTAW welding and laser welding have been developed for joining Zr alloys components for different types of reactors. Many of these have been standardized and successfully used in production. Several advancements have been made in the welding technologies towards achieving high productivity and increased reliability ...

2002-09-11

72

Reactor fuel cladding tube with excellent corrosion resistance and method of manufacturing the same  

International Nuclear Information System (INIS)

The present invention provides a fuel cladding tube having an excellent corrosion resistance and thus a long life, and a suitable manufacturing method therefor. Namely, in the fuel cladding tube, the outer circumference of an inner layer made of a zirconium base alloy is coated with an outer layer made of a metal more corrosion resistant than the zirconium base alloy. Ti or a titanium alloy is suitable for the corrosion resistant metal. In addition, the outer layer can be coated by a method such as vapor deposition or plating, not limited to joining of the inner layer material and the outer layer material. Specifically, a composite material having an inner layer made of a zirconium alloy coated by the outer material made of a titanium alloy is applied with hot fabrication at a temperature within a range of from 500 to 850degC and at a fabrication rate of not less than 5%. The fabrication method includes any of extrusion, ...

1993-07-14

73

Preparation of a "6"2Zn-"6"2Cu generator and of "6"1Cu following alpha particle irradiation of a nickel target  

International Nuclear Information System (INIS)

The "6"2Zn-"6"2Cu generator system is one of the few which yield a pure positron emitting daughter. The authors have developed a method for the preparation of this generator system following 32 MeV #alpha# particle bombardment of nickel targets. The chemical processing involves two stages: first a hydrous zirconium oxide column is used at pH 4-5 to separate the zinc and copper activities produced in the target nickel, and secondly, a conventional anion exchange column is used to retain the "6"2Zn and remove all copper activities in 2M HCl. This column serves as the "6"2Cu generator which will yield pure "6"2Cu repeatedly, free from "6"2Zn and other impurities, in a mixture of HCl and NaCl. A method is outlined also to obtain a solution of "6"2Zn using the hydrous zirconium oxide (HZO) column. "6"1Cu can be prepared as a by-product in the above procedure, but a method for the preparation of "6"1Cu alone using an 18 MeV #alpha# particle beam on a ...

74

Metallization of large silicon wafers. Final report  

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This ...

75

Interaction of tetravalent plutonium and zirconium with citric acid in nitric acid solutions  

Science.gov (United States)

The interaction of Pu(IV) and Zr(IV) with citric acid in nitric acid solutions (C/sub HNO/sub 3// greater than 0.1 M) of lithium nitrate was studied by the distribution method in the interval of nitrate ion concentrations from 1 to 6 g-eq/liter. A 40 percent solution of TBP in decane was used as the extraction reagent. It was established that within the range of concentrations studied, complex compounds of plutonium and zirconium are formed: PuHCit/sup 2 +/ and ZrH/sub 2/Cit/sup 3 +/. The concentration equilibrium constants of the reactions of formation of these compounds retain a constant value at constant ionic strength and undergo substantial variation when the total concentration of the nitrate ion in solution is varied. The values of the effective equilibrium constants, calculated considering the change in the activity coefficient of the hydrogen ion, retain a constant value within a wide range of nitrate ion concentrations. It was shown that the effectiveness ...

1975-01-01

76

Electrochemical roles of precipitates on uniform corrosion and hydrogen pickup of zirconium alloys, 2. Roles on hydrogen pickup  

Energy Technology Data Exchange (ETDEWEB)

Substantial roles of precipitates such as Zr-Fe-Cr type intermetallic compounds on uniform corrosion and hydrogen pickup of zirconium alloys in pure water autoclave tests were investigated from an electrochemical point of view. In the previous paper, corrosion mechanism was elucidated by the anodic protection-precipitates degradation model. This paper describes the roles on hydrogen pickup. 633 K pure water autoclave test was performed on high purity zirconium, Zr-0.2Fe, Zr-0.2Cr, and Zr-0.1Fe-0.1Cr alloys. Hydrogen analysis after the corrosion test showed that hydrogen pickup ratio of Zr-0.2Fe alloy was about 80%. It was much higher than about 30% of pure Zr and about 10% of both Zr-0.2Cr and Zr-0.1Fe-0.1Cr alloys. Larger hydrogen content was introduced into Zr-0.2Fe alloy than the other ones by the cathodic hydrogen charging under coulombic equivalence. The precipitates at metal-oxide interface could act not only as cathodic sites in the ...

2000-08-01

77

Electrochemical roles of precipitates on uniform corrosion and hydrogen pickup of zirconium alloys, 2. Roles on hydrogen pickup  

International Nuclear Information System (INIS)

Substantial roles of precipitates such as Zr-Fe-Cr type intermetallic compounds on uniform corrosion and hydrogen pickup of zirconium alloys in pure water autoclave tests were investigated from an electrochemical point of view. In the previous paper, corrosion mechanism was elucidated by the anodic protection-precipitates degradation model. This paper describes the roles on hydrogen pickup. 633 K pure water autoclave test was performed on high purity zirconium, Zr-0.2Fe, Zr-0.2Cr, and Zr-0.1Fe-0.1Cr alloys. Hydrogen analysis after the corrosion test showed that hydrogen pickup ratio of Zr-0.2Fe alloy was about 80%. It was much higher than about 30% of pure Zr and about 10% of both Zr-0.2Cr and Zr-0.1Fe-0.1Cr alloys. Larger hydrogen content was introduced into Zr-0.2Fe alloy than the other ones by the cathodic hydrogen charging under coulombic equivalence. The precipitates at metal-oxide interface could act not only as cathodic sites in the ...

2000-08-01

78

Electrical and structural properties of ion-implanted and post-annealed silicide films  

Energy Technology Data Exchange (ETDEWEB)

The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to PdSi was also observed in the ...

1982-05-01

79

Electrical and structural properties of ion-implanted and post-annealed silicide films  

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd"2Si films. ...

80

Effects of palladium particle size and palladium silicide formation on fourier transform infrared spectra of CO adsorbed on Pd/SiO sub 2 catalysts  

Energy Technology Data Exchange (ETDEWEB)

Two major modes of CO adsorption on SiO{sub 2}-supported Pd reflect different extents of back-donation, which is, at least in part, controlled by the local electron density at the adsorption site. The fraction of CO in the bridging mode (B) increases and that of the linear mode (L) decreases, with increasing size of the Pd particles, indicating high electron density at Pd atoms in terraces of close-packed crystal faces, in agreement with Smoluchowski's classical model. For samples reduced at 300{degree}C our data points and those of other authors are located on a common curve of B/L vs metal dispersion. Extensive reduction at 600{degree}C results in significantly lower B/L values, attributed to the incipient formation of a palladium silicide. Oxidation followed by reduction at 300{degree}C destroys the silicide, and the B/L value returns to the original curve.

1989-06-15

81

Effects of palladium particle size and palladium silicide formation on fourier transform infrared spectra of CO adsorbed on Pd/SiO sub 2 catalysts  

Science.gov (United States)

Two major modes of CO adsorption on SiO{sub 2}-supported Pd reflect different extents of back-donation, which is, at least in part, controlled by the local electron density at the adsorption site. The fraction of CO in the bridging mode (B) increases and that of the linear mode (L) decreases, with increasing size of the Pd particles, indicating high electron density at Pd atoms in terraces of close-packed crystal faces, in agreement with Smoluchowski's classical model. For samples reduced at 300{degree}C our data points and those of other authors are located on a common curve of B/L vs metal dispersion. Extensive reduction at 600{degree}C results in significantly lower B/L values, attributed to the incipient formation of a palladium silicide. Oxidation followed by reduction at 300{degree}C destroys the silicide, and the B/L value returns to the original curve.

1989-06-15

82

Study on the solid state reaction between bilayered Pd/Au films and silicon substrates  

British Library Electronic Table of Contents (United Kingdom)

Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...

2006-01-01

83

Study of surface segregation of Si on palladium silicide using Auger electron spectroscopy  

International Nuclear Information System (INIS)

The transformation of Pd/Si to Pd_2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd_2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd_2Si is formed in the form of islands, which grow as the annealing temperature is increased.

2004-11-21

84

Separation of magnesium from magnesium chloride and zirconium and/or hafnium subchlorides in the production of zirconium and/or hafnium sponge metal  

International Nuclear Information System (INIS)

This patent describes the producing of a refractory metal wherein a sponge refractory metal is produced as an intermediate product by the use of magnesium with the incidental production of magnesium chloride, and wherein residual magnesium is separated from the magnesium chloride and from refractory metal to a vacuum distillation step which fractionally distills the magnesium, the magnesium chloride, and the metal sub-chlorides; the steps of: recovering fractionally distilled vapors of magnesium chloride and metal sub-chlorides from a sponge refractory metal; separately condensing the vapors as separately recovered; and recycling the separately recovered magnesium at a purity of at least about 96%.

1990-09-21

85

Low energy ion scattering study of palladium films on silicon(111)-7 x 7 surfaces  

Energy Technology Data Exchange (ETDEWEB)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.

1983-12-15

86

Low energy ion scattering study of palladium films on silicon(111)-7 x 7 surfaces  

International Nuclear Information System (INIS)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).

87

Ion-induced phase formation in metal-silicon systems. [Xenon ion implantation effects  

Energy Technology Data Exchange (ETDEWEB)

By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.

1985-01-11

88

Ion-induced phase formation in metal-silicon systems  

International Nuclear Information System (INIS)

By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).

89

In situ strain measurements during the formation of palladium silicide films  

Energy Technology Data Exchange (ETDEWEB)

The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.

1993-03-01

90

High temperature structural silicides  

Energy Technology Data Exchange (ETDEWEB)

Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

1997-03-01

91

Dependence of ion-induced Pd-silicide formation on nuclear energy deposition density  

Energy Technology Data Exchange (ETDEWEB)

Pd/sub 2/Si formation at the Pd-Si interface induced by irradiation with ions having a wide range of nuclear energy of deposition density has been investigated. It is found that the thickness of the silicide layer formed by irradiation is proportional to the ion fluence for irradiation with ions having low energy-deposition densities, while it is proportional to the square root of the fluence for irradiation with ions having energy-deposition densities. The results indicate that Pd/sub 2/Si formation is reaction limited when the energy-deposition density at the interface is low and is diffusion limited when it is high. The results are compared with the phenomenological theory developed by Horino et al. and it is shown that such a dependence of the limiting processes on the energy depositon density is induced when the diffusion is thermally activated while the reaction at the interface is radiation-enhanced.

1986-05-01

92

Corrosion resistance characteristic of aluminium bronze containing chromium and zirconium  

International Nuclear Information System (INIS)

There are reported the results of corrosion resistance investigation of aluminium bronzes, containing about 8 and 10% of aluminium and modifying quantities of zirconium. The tests of corrosion resistance were carried out in synthetic seawater, in 3% NaCl aqueous solution and in 10% H_2SO_4 aqueous solution, with reference to industrial bronze BA93 (CuAl9Fe3). The bronzes were tested in an annealed, hardened, tempered state and after plastic hot working. The conclusion is that corrosion resistance of aluminium bronzes, especially against selective corrosion, depends more on material structure, resulted form heat treatment, than on chemical composition. (author). 6 refs, 8 figs, 6 tabs.

93

Comparison of sodium zirconium phosphate-structured HLW forms and synroc for high-level nuclear waste immobilization  

Energy Technology Data Exchange (ETDEWEB)

The incorporation of (a) Cs/Sr as simulated heat-generating isotopes contained in Purex reprocessing waste, (b) simulated actinides, and (c) simulated Purex waste in sodium zirconium phosphate (NZP) has been studied. The samples were prepared by sintering, by hot pressing and by hot isostatic pressing in metal bellows containers. The short-term chemical durability of the phosphate-based material containing Purex waste was within an order of magnitude of that for Synroc-C, as measured by 7-day MCC-1 tests at 90{degrees}C. The dissolution behavior showed evidence of re-precipitation phenomena, even after times as short as 28 days. Potential for improvement of NZP-based ceramics for HLW management is discussed. 19 refs., 4 figs., 3 tabs.

1996-12-31

94

Comparison of sodium zirconium phosphate and Synroc matrices for immobilization of high-level waste  

Energy Technology Data Exchange (ETDEWEB)

The aims of the present work were to investigate possible compatibility between sodium zirconium phosphate (NZP) and Synroc titanate phases, to prepare NZP-based waste forms by hot-pressing rather than sintering, and to investigate the incorporation in NZP of (a) Cs/Sr as simulated heat-generating nuclides; (b) simulated actinides; and (c) simulated Purex waste. The NZP samples were prepared by methods similar to those used for Synroc. The precursor NZP phase was formed from tetrabutyl zirconate Zr(OC{sub 4}H{sub 9}){sub 4}, sodium nitrate, and 85% orthophosphoric acid. Simulated waste nitrate solutions were then mixed with the liquid precursor. After stir drying of the precursor, calcination was carried out at 700{degree}C to remove nitrates and organics.

1996-12-31

95

Channeling studies of radiation damage in metal-silicides  

Science.gov (United States)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.

1978-01-01

96

Channeling studies of radiation damage in metal-silicides  

International Nuclear Information System (INIS)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.

97

Cerium moment collapse in ternary silicides CePd_2_-_xMn_xSi_2 (0#<=#x#<=#2)  

International Nuclear Information System (INIS)

Cerium L_3 XANES (x-ray-absorption near-edge-structure) spectra were analyzed to separate Ce moment contributions and mixed valence (MV) in complex magnetic silicides CePd_2_-_xMn_xSi_2 (0#<=#x#<=#2). The Ce valence mixing does not vary linearly with x, but increases rapidly for x#>=#1.5. The associated moment collapse correlates with pronounced deviations of the unit-cell volume from Vegard law and the onset of structural instability. Reorientation of [001] Mn 3d antiferromagnetic order for x<2 appears to rapidly suppress the weak Ce valence mixing coexisting with antiferromagnetic order in CeMn_2Si_2.

98

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures  

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

1975-01-01

99

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures  

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

100

Ar/sup +/ ion beam induced silicide formation mechanism at the Pf-Si interface  

Energy Technology Data Exchange (ETDEWEB)

Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

1989-01-01

101

Transformation Isotherme beta to alpha Dans L 'uranium Pur et Faiblement Allie (Beta to alpha Isothermal Transformation in Pure and Weakly Alloyed Uranium).  

Science.gov (United States)

The TTT diagrams describing the beta to alpha isothermal transformation have been made by isothermal dilatometry for pure uranium and 21 alloys based on chromium, silicon, molybdenum, iron, aluminium, zirconium. The thermal cycle preceeding the isothermal...

1966-01-01

102

State-of-the-art technology for production of seamless tubes in zirconium and titanium alloys  

International Nuclear Information System (INIS)

Zircaloy fabrication plant manufactures all the necessary Zr-2 components like fuel canning tubes, calandria tubes and other rod and sheet products. This plant is having a capacity of producing about 4 lakh nos. of PHWR fuel tubes per annum. These tubes are seamless, thin walled with close dimensional tolerances and stringent mechanical properties. The plant has established all the facilities required to produce these tubes with required quality.

103

SOME RECENT DETERMINATIONS OF ATOMIC MASSES IN THE STRONTIUM-ZIRCONIUM REGION  

Science.gov (United States)

A large double-focusing mass spectrometer was used to obtain new values for the masses of Sr/sup 86/, Sr/sup 88/, and Zr/sup 90/. Mass differences calculated from these values are found to be in better agreement with nuclear transmutation information than were previous mass spectroscopically derived values. (auth)

1960-06-01

104

Recent process developments at the SOMAIRE uranium mill  

International Nuclear Information System (INIS)

This paper reviews the mill flowsheet applied at the SOMAIR (Societe des Mines de l'Air) uranium mill in Niger. It focuses on the yellow cake quality improvements achieved by molybdenum and zirconium elimination through double yellow cake precipitation in tanks at first stage and through size/density control in a fluidized bed precipitator at second stage. Water saving aspects in the plant are also presented. (author)

2000-09-09

105

Method of altering the permeability of a subterranean formation  

Science.gov (United States)

The production of water from a subterranean formation is reduced by contacting the formation with a water dispersible hydrophilic organic polymer having a molecular weight greater than 100,000 and containing carboxyl functionality and a crosslinking composition comprising water, a zirconium compound having a value of 4+, an alpha-hydroxy acid and an amine compound.

1985-06-25

106

Layerwise reaction at a buried interface  

Energy Technology Data Exchange (ETDEWEB)

X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 A. During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.

1992-10-26

107

Joined ceramic product  

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

2001-01-01

108

Introduction to corrosion of bioimplants  

British Library Electronic Table of Contents (United Kingdom)

The review provides a general idea about the types of metallic alloys and the pure metals used as implant materials in dental and orthopedic surgery. Their corrosive behavior in both real solutions and various media that model human biological fluids is described. Based on the literature data, it is concluded that multicomponent alloys containing titanium, niobium, zirconium, tungsten, molybdenum, aluminum, and silicon are the most resistant to corrosion. Implants made of different types of stainless steel are preferred when manufacturing orthopedic devices for short-term use.

2011-01-01

109

Intensity of auger-emission of silicon from binary compounds in the ion auger spectroscopy  

International Nuclear Information System (INIS)

Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.

110

Integral testing of the evaluated data files for silicon, zirconium, niobium and iron  

Energy Technology Data Exchange (ETDEWEB)

The evaluated data testing for Si, Zr, Nb and Fe materials has been performed through the analyses of the neutron leakage spectrum from spherical assemblies measured in integral benchmark experiments with (d,t) and Cf fission neutron sources. Intercomparisons of the calculated from BROND-2, ENDF/B-6 and JENDL-3 data files with experimental results are presented.

1994-12-31

111

Hydrogen-induced phase transformations in H-storing alloys of zirconium  

Energy Technology Data Exchange (ETDEWEB)

In this work, the ability of a number of Zr-containing intermetallic compounds with the Zr{sub 2}Me stoichiometry, including Zr{sub 2}Fe, Zr{sub 2}Ni, Zr{sub 2}Co and Zr{sub 4}Fe{sub 2}O{sub 0.6}, to participate in the Hydrogenation-Disproportionation-Desorption-Recombination process was investigated, revealing for the first time that the HDDR route can be employed successfully for all these compounds. 24 refs.

1998-07-01

112

Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces  

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued beneath the Si surface. The part of the #beta#-FeSi_2 nanodot ...

2005-08-15

113

Duct and cladding alloy  

Energy Technology Data Exchange (ETDEWEB)

An austenitic alloy having good thermal stability and resistance to sodium corrosion at 700.degree. C. consists essentially of 35-45% nickel 7.5-14% chromium 0.8-3.2% molybdenum 0.3-1.0% silicon 0.2-1.0% manganese 0-0.1% zirconium 2.0-3.5% titanium 1.0-2.0% aluminum 0.02-0.1% carbon 0-0.01% boron and the balance iron.

1983-01-01

114

Correlation between electrochemical properties and corrosion resistance of zirconium alloys  

International Nuclear Information System (INIS)

The electrochemical behavior of some zirconium alloys including Zry-2 with various #SIGMA#Ai from 2.5 x 10"-"2"0 to 1.2 x 10"-"1"7 (h), modified Zry-2 with iron contents of 0.15, 0.25, and 0.5%, and standard Zry-4 was studied by measuring anodic polarization curves in sulfuric acid solution. The results of these electrochemical tests were compared with those of steam autoclave tests. In Zry-2, the current peak was observed at 1250 mV (versus SCE) on the anodic polarization curve, and this peak area increased with #SIGMA#Ai and with the size of secondary precipitates. Also, this peak was closely correlated with nodular corrosion resistance as expected from the above results. As iron contents in modified Zry-2 increased, the current peak at 1,250 mV decreased and a new peak at 1,900 mV appeared. The former peak disappeared and the latter peak increased further at 0.5% iron. In Zry-4, the current peak was observed at 1,900 mV, but not at 1,250 mV, and this behavior ...

1995-09-11

115

Characterization of PdAu thin films on oxidized silicon wafers: interdiffusion and reaction  

International Nuclear Information System (INIS)

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum at the interface with decay on both sides. The density and the ...

2003-05-31

116

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect ...

1989-01-01

117

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. A heat transfer model ...

118

A structure modeling of metal-silicide layers by using axial and planar channeling techniques  

International Nuclear Information System (INIS)

Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).

119

{sup 99m}Tc generator preparation using (n, {gamma}){sup 99}Mo produced ex-natural molybdenum  

Energy Technology Data Exchange (ETDEWEB)

Theoretical assessment on the chromatographic {sup 99m}Tc generator preparation using (n, {gamma}) {sup 99}Mo produced ex-natural molybdenum was carried out. The relationship between the neutron flux for MoO{sub 3} target activation, Mo-content or Mo adsorption capacity of column packing material, {sup 99m}Tc pertechnetate concentration and/or {sup 99m}Tc radioactivity of eluate was established. The reasonably lower limit of neutron flux of reactor and Molybdenum content of column packing material were found out to estimate the production of portable chromatographic generators available for nuclear medicine application. The concentration of {sup 99m}Tc pertechnetate eluate of low {sup 99m}Tc concentration using the column elution technique was also evaluate theoretically and conducted successfully in practice. Three options of {sup 99m}Tc generator using Titanium-Molybdate, Zirconium-Molybdate and Zirconium Oxide as generator column-packing ...

2003-03-01

120

Thermodynamics, lattice stability and defect structure of strontium silicides via first-principles calculations  

International Nuclear Information System (INIS)

The thermodynamics of the Sr-Si system is of fundamental importance for the understanding of eutectic modification of Al-Si alloys. At the same time, strontium silicides have recently been found to have potential applications in electronic devices. Renewed research efforts have led to a re-evaluation of the phase equilibria in this system, resulting in the discovery of previously undetected stable intermetallic compounds. In this work, we investigate the finite temperature thermodynamic properties of the stable (and metastable) Sr-Si intermetallics. The vibrational properties of the intermetallic compounds are calculated within harmonic theory, with quasi-harmonic corrections to account for the effects of thermal expansion. The total free energies of the compounds are computed considering vibrational and electronic contributions, as well as weak anharmonic corrections. The ground state of the system is predicted and compared to previous experimental and ...

2009-09-18

121

Superconducting and optical properties of #alpha#-zirconium from its augmented-plane-wave band structure  

International Nuclear Information System (INIS)

The detailed electronic energy band structure of hexagonal close-packed #alpha#-zirconium, corresponding to the atomic configuration of 4d"25s"2 of its four outermost valence electrons, has been computed by the composite-wave variational version of the augmented-plane-wave(APW) method in conjunction with the X#alpha#(#alpha# = 0.70424) exchange approximation for obtaining the potentials. From these data the electronic density of states and its angular-momentum-decomposed components have been obtained by the Raubenheimer-Gilat method. These quantities are required in order to calculate the electron-phonon interaction parameter (lambda) and the superconducting transition temperature (Tsub(c)) within the framework of the theories of Gaspari and Gyorffy and McMillan. A study of the variation of Tsub(c) with the Coulomb pseudopotential (#mu#*) revealed that #mu#* = 0.1 yields the best agreement between theory and experiment for #alpha#-Zr. Also studied from the energy ...

122

Spectral dependence of ultrasonic attenuation for hydrided Zr-2.5%Nb Alloy  

International Nuclear Information System (INIS)

The cold-worked Zr-2.5%Nb alloy is used as material for the pressure tubes in CANDU nuclear reactors. During the service life in reactor, diffusion of hydrogen and/or deuterium in the pressure tubes wall occur. Below a certain temperature, a stable hydride of zirconium is formed, as a brittle phase which can lead to catastrophic failures. For this reason, it is very important to be able to investigate the hydrogen effect on the micro structural properties of zirconium alloys. In the present paper a non-destructive testing technique is used, known as ultrasonic spectral analysis. When an ultrasonic signal traverses a medium, the frequency components associated with the input signal are altered. By frequency analysing the reflected signals, it is possible to study and compare the material properties. The two major parameters measured in ultrasonic spectroscopy are the attenuation and the velocity of the waves. Attenuation is determined by the ...

2009-10-12

123

Photoelectrochemistry of disordered passive films  

Energy Technology Data Exchange (ETDEWEB)

A theoretical model, which describes subband gap photoexcitation involving localized electronic states, was developed. The escape probability of a charge carrier trapped in a localized state is considered via Poole-Frenkel, direct tunneling, or phonon-assisted tunneling processes, as competing escape mechanisms. Photoelectrochemical experiments were performed on the passive films formed on zirconium and amorphous iron-zirconium alloys and on pure HfO/sub 2/ films and HfO/sub 2/ films implanted with varying concentrations of xenon. These films were found to possess some degree of disorder depending on the substrate, the thickness of the film, and the extent of implantation. The spectral dependence of the photocurrent in all of the films studied is considerably different from what was found for crystalline passive films. The potential dependence of the photocurrent yields Poole-Frenkel behavior. Reverse tunneling processes were also observed at ...

1987-01-01

124

Microstructural observation of focused ion beam modification of Ni silicides/Si thin films  

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the ...

1996-12-02

125

Manufacturing method of zirconium alloy-type structural material in reactor core excellent in corrosion resistance, especially in uniform corrosion resistance and hydrogen absorption resistance  

International Nuclear Information System (INIS)

A zirconium alloy comprising from 0.8 to 1.6wt% of Sn, from 0.17 to 0.25wt% of Fe, from 0.15 to 0.25wt% of Cr and from 0.01 to 0.08wt% of Ni and Si at a concentration of 120ppm or lower as an impurity and the balance of Zr is melted into cast pieces and then subjected to an #beta# annealing. It is controlled so as to satisfy Fe + Cr + Ni #<=# 0.52wt%. Then, rolling and annealing are applied so that the total heat injection amount #SIGMA#A_i to the materials is within a range of from 1 x 10"-"1"9 to 1 x 10"-"1"7. #SIGMA#A_i = #SIGMA#t_i #centre dot# exp(-Q/RT_i), in which t_i represents processing time (hour) at an ith heat treatment step after the #beta# annealing, T_i represents a processing temperature (K) in the step i. Q represents an activating energy, R represents a gas constant, and Q/R 40,000. (I.N.).

1995-08-23

126

Luminescent determination of zirconium and hafnium with myricetin  

International Nuclear Information System (INIS)

Reaction of formation of 3, 5, 7, 3', 4', 5' - hexaoxiflavone - myricetin complexes with zirconium and hafnium ions has been the basis for development of luminescent method of determining these elements. Optimum conditions for complexing have been determined. For Hf they are : 8-9 HCl concentration, maximum fluorescence wave length (lambda fl.)of 520 nm, wave length of exciting light (lambda el) of 436 nm, for Zr lambda fl = 536nm, lambda el = 436 nm. Stable fluorescence establishes after 25 min. for Zr and after 15 min for Hf in the presence of 40% ethanol. Usage of various camouflage agents has permitted to attain high selectivity of the method. Possibility for determination of Zr with myricetin in the presence of a 10-time excess of Hf, Cr, Cu, 50-time excess of Mo and Ti is shown. Sensitivity of Zr determination is 2.0x10 #mu#g"-"2/ml, for Hf it is 9.0x10 #mu#g"-"3 and mineral waters.

127

Low temperature formation of shallow p{sup +}n junctions by BF{sub 2}{sup +} implantation into thin Pd{sub 2}Si films on Si substrates  

Energy Technology Data Exchange (ETDEWEB)

Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during high temperature ...

1995-05-01

128

Influence of alloying elements on the irradiation hardening and environmental sensitivity of zirconium alloys  

International Nuclear Information System (INIS)

Ten different alloys of zirconium have been tested with regard to the effect of irradiation on their mechanical properties and their sensitivity to environmentally induced failure. Two different environments were used: iodine vapour and liquid cesium with an addition of 2% cadmium. The neutron dose was 10"2"1n/cm"2 (E>1MeV) and the irradiation temperature was about 300 degrees C. All alloy additions increased the irradiation hardening. Especially notable was the large effect of titanium and tin on irradiation hardening. A limited amount of transmission electron microscopy was carried out in order to find an explanation to the effects. The testing in different environments showed that there is no clear correlation between environmental sensitivity and yield stress. For materials of similar yield stress an alloyed material tends to be more sensitive to environmental cracking than a material which only contains oxygen as an impurity. There also seems to be an ...

1991-08-25

129

Hydrous oxide activated charcoal  

Energy Technology Data Exchange (ETDEWEB)

This patent describes a process for preparing of an ion exchanger, comprising: treating an ionically inert activated charcoal porous support with an aqueous solution of metal oxychloride selected from the group consisting of zirconium and titanium oxychlorides so as to impregnate the pores of the support with the solution; separating the treated support from excess metal oxychloride solution; converting the metal oxychloride to a hydrous metal oxide precipitate in the pores of the support at a pH above 8 and above the pH whereat the hydrous metal oxide and activated charcoal support have opposite zeta potentials and sufficient to hydrolyze the metal oxychloride. It also describes a process for preparing an ion exchanger comprising: treating granulated activated charcoal with a concentrated solution of a metal oxychloride from the group consisting of zirconium and titanium oxychlorides, degassing the mixture; and treating the resultant mixture ...

1987-09-08

130

Session 6: Redox Behavior of Cerium-Zirconium-Bismuth Mixed Oxides  

Energy Technology Data Exchange (ETDEWEB)

The CeO{sub 2}-ZrO{sub 2}-Bi{sub 2}O{sub 3} samples with different bismuth content were prepared in this study. By the doping of Bi{sub 2}O{sub 3} into the lattice, TPR profiles of the CeO{sub 2}-ZrO{sub 2} shifted to lower temperatures and oxygen storage capacity increased remarkably. It is concluded that the reason for such a behavior is probably due to both the formation of oxygen vacancies which enhance the oxygen mobility and the simultaneous reduction of Ce{sup 4+} and Bi{sup 3+} in the mixed oxides. (authors)

2004-07-01

131

Reaction of hydrogen with ZrNiHsub(x) studying by programmed thermodesorption method  

International Nuclear Information System (INIS)

The method of programmed thermodesorption has been used to study the forms of hydrogen adsorption in ZrNiHsub(x) hydride. It is shown that high concentration of the hydrogen, which extracted from hydride in the temperature range of 240-260 deg C results in appearance of ''reverse'' peak. Charge of hydride adsorption properties during its oxidation-reduction treatment is studied. Comparison with spectra of hydrogen thermodesorption from the surface of Ni/ZrO_2 deposited catalyst and zirconium oxide is carried out.

1983-01-01

132

Phase diagrams  

International Nuclear Information System (INIS)

The description is presented of binary phase diagrams of titanium alloyed with the following elements: silver, aluminium, arsenic, gold, boron, barium, beryllium, bismuth, carbon, calcium, cadmium, cobalt, chromium, copper, iron, gallium, germanium, hydrogen, hafnium, indium, iridium, potassium, lithium, magnesium, manganese, molybdenum, nitrogen, sodium, niobium, nickel, oxygen, osmium, phosphorus, lead, palladium, platinum, plutonium, rhenium, lanthanium, cerium, preseodymium, neodymium, gadolinium, erbium, terbium, thulium, lutetium, rhodium, ruthenium, scandium, silicon, tin, strontium, tantalum, technetium, thorium, uranium, vanadium, tungsten, yttrium, ytterbium, zinc and zirconium.

133

Evidence for excess vacancy defects in the Pd-Si system: positron annihilation, x-ray diffraction and Auger electron spectroscopy study  

Energy Technology Data Exchange (ETDEWEB)

The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)

2003-11-26

134

Aspects of the contamination with oxygen in obtaining low enriched uranium fuel  

International Nuclear Information System (INIS)

The manufacturing of TRIGA fuel rods with low enriched uranium follows in principle the same route as high-enriched uranium. The high purity of the primary metals (uranium, zirconium and erbium) is important for determining the equilibrium metal-hydrogen phases. The impurities from the metal, on the surface and from hydrogen may have an important influence on the hydriding process. This paper presents the aspects of the fuel contamination with oxygen during the manufacturing process of the low enriched uranium fuel. The continuous control of the oxygen concentration in the working zone ensures avoidance of the accidental contamination. Key words: manufacturing, fuel, oxygen, contamination. (authors)

2009-10-12

135

Anodic oxide coatings on metals and anodic protection /2nd revised and enlarged edition/. Anodnye oksidnye pokrytiia na metallakh i anodnaia zashchita /2nd revised and enlarged edition/  

Energy Technology Data Exchange (ETDEWEB)

The theoretical principles underlying the formation of oxide and, in particular, anodic oxide coatings on metals produced by chemical oxidation, anodizing in solutions, and anodizing in cold plasmas are reviewed. The mechanisms and conditions of anodic oxidation are described, and the structure of anodic oxide coatings on aluminum, magnesium, beryllium, zinc, cadmium, iron, cobalt, nickel, titanium, zirconium, tantalum, and chromium alloys is examined. Attention is also given to various applictins of anodized coatings. 54 references.

1985-01-01

136

Activation method for determination of Pb, La, Zr and Ti macrocomponents in lead-lanthanum zirconate-titanate materials on a neutron generator  

International Nuclear Information System (INIS)

Instrumental neutron activation analysis is used for simultaneously determination of macrocomponents in ferroelectric materials LLZT. Pb, Zr, Ti have been determined by "2"0"3Pb, "8"9Zr and "4"8Sc nuclides created by fast neutron (14.5 MeV) activation. Application of paraffine as neutron moderator and reflector allows to simultaneously determine lanthanum by "1"4"0La nuclide. It has been shown that zirconium, titanium and lanthanum can be determined with the accuracy of #+-#0.1 mas. % and lead - #+-#0.7 mas. %.

137

A truly commercial product  

International Nuclear Information System (INIS)

In one of the first uses of high Tc superconductors in an end-use product, Lake Shore Cryotronics and a Swiss lab have developed a liquid nitrogen level sensor using a high Tc thin film. The probe is manufactured using a seamless stainless steel tube with an yttrium-based zirconium oxide flame-sprayed on the tube. A plasma-sprayed superconductor compound is deposited on top of that. The probe is coated with a sealant that protects the superconducting film from the atmosphere. This manufacturing method has yielded an extremely durable product. Unaffected by ice formation and related mechanical problems, the superconducting level sensor can be kept in the dewar for long periods of time.

138

Research efforts to produce a {sup 99}Mo-{sup 99m}Tc generator using reactor-produced {sup 99}Mo  

Energy Technology Data Exchange (ETDEWEB)

Recognizing the importance of {sup 99m}Tc and {sup 99m}Tc-based radiopharmaceuticals in nuclear medicine, the Philippine Nuclear Research Institute has initiated research on the development of column-type generators for {sup 99m}Tc using {sup 99}Mo in the form of a gel. The use of reactor-produced {sup 99}Mo will reduce the country's dependence on the importation of commercial generators based on fission product molybdenum-99. However, the relatively low specific activity of {sup 99}Mo must be compensated by the high adsorption capacity of the column material for molybdenum. A procedure based on the incorporation of low activity {sup 99}Mo into a zirconium molybdate gel matrix was adopted with reasonable success. Because the properties of the gel vary considerably with conditions of synthesis, the following parameters were carefully controlled: pH, concentration, temperature, order of mixing of the reactant solutions and conditions of aging, washing and ...

2003-03-01

139

Delayed Hydride Cracking Mechanism in Zirconium Alloys and Technical Requirements for In-Service Evaluation of Zr-2.5Nb Tubes with Flaws  

International Nuclear Information System (INIS)

In association with periodic inspection of CANDU nuclear power plant components, Canadian Standards Association issued CSA N285.8 in 2005 as technical requirements for in-service evaluation of zirconium alloy pressure tubes in CANDU reactors. This first version, CSA N285.8 involves procedures for, firstly, the evaluation of pressure tube flaws, secondly, the evaluation of pressure tube to calandria tube contact and, thirdly, the assessment of a reactor core, and material properties and derived quantities. The evaluation of pressure tube flaws includes delayed hydride cracking evaluation the procedures of which are stipulated based on the existing delayed hydride cracking models. For example, the evaluation of flaw-tip hydride precipitation during reactor cooldown involves a procedure to calculate the equilibrium hydrogen equivalent concentration in solution at the flaw tip, Htipas follows: Htip=Hfexp[- (VH delta no.)/RT], where Hf is the total bulk hydrogen ...

2007-05-10

140

GRAIN REFINEMENT OF PERMANENT MOLD CAST COPPER BASE ALLOYS  

Energy Technology Data Exchange (ETDEWEB)

Grain refinement behavior of copper alloys cast in permanent molds was investigated. This is one of the least studied subjects in copper alloy castings. Grain refinement is not widely practiced for leaded copper alloys cast in sand molds. Aluminum bronzes and high strength yellow brasses, cast in sand and permanent molds, were usually fine grained due to the presence of more than 2% iron. Grain refinement of the most common permanent mold casting alloys, leaded yellow brass and its lead-free replacement EnviroBrass III, is not universally accepted due to the perceived problem of hard spots in finished castings and for the same reason these alloys contain very low amounts of iron. The yellow brasses and Cu-Si alloys are gaining popularity in North America due to their low lead content and amenability for permanent mold casting. These alloys are prone to hot tearing in permanent mold casting. Grain refinement is one of the solutions for reducing this problem. However, to use this ...

2004-04-29

141

The activity profile and cross section of isotopes from #alpha#-induced nuclear reaction on Zr for radioanalytical applications  

International Nuclear Information System (INIS)

The cross section and activity profile of different radioisotopes produced by #alpha#-induced nuclear reaction on natural zirconium, have been obtained by stacked foil activation using 40 MeV #alpha#-particles from Variable Energy Cyclotron (VEC) machine at Calcutta. The activity profile would be used to study the surface loss of zircaloy materials of engineering components by thin layer activation (TLA) technique. Generally, isotopes with suitable #gamma#-rays and long half-lives are the most useful in TLA technique, e.g., "9"2Nb, "9"5"gNb and "9"5Zr. (author). 2 refs., 1 tab.

1995-02-01

142

Tantalum nitride as a diffusion barrier between Pd_2Si or CoSi_2 and aluminum  

International Nuclear Information System (INIS)

Reactively sputtered tantalum nitride (Ta_2N) has been investigated as a diffusion barrier between Pd_2Si and aluminum and CoSi_2 and Al. Ta_2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 "0C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd_2Si/Ta_2N/Al were excellent and showed no deterioration after annealing at 500 "0C. However, similar devices with CoSi_2 contacts and Ta_2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

143

Tantalum nitride as a diffusion barrier between Pd/sub 2/Si or CoSi/sub 2/ and aluminum  

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

1989-04-15

144

Supercritical Fluid Immersion Deposition: A New Process for Selective Deposition of Metal Films on Silicon Substrates  

Energy Technology Data Exchange (ETDEWEB)

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

2005-01-01

145

Study of even-A zirconium and strontium isotopes with the (d,"6Li) reaction  

International Nuclear Information System (INIS)

All stable even-A molybdenum isotopes and sup(90,92)Zr have been investigated with the (d, "6Li) reaction at Esub(d) = 45 MeV to study proton- and neutron-pair correlations. Differential cross sections were measured for states up to Esub(x) = 3 MeV in "8"6Sr, sup(88,92,94,96)Zr and up to 6 MeV in "8"8Sr and "9"0Zr. Particular attention was paid to the comparison of #alpha#-pickup data with two-nucleon pickup data. The population of low-lying 0"+ and 5"- states for two-neutron and four-nucleon pickup reactions was calculated using simple phenomenological wave functions for the initial and final states. The results of these calculations are in satisfactory agreement with the data. (orig.).

146

Some sensitivities during a LWR severe core-damage sequence  

International Nuclear Information System (INIS)

Stable boiloff of core water during a severe LWR accident, that is, boiloff driven only by the decay power generated below the water level, is tractable analytically and is relatively insensitive to axial power distribution. As might be expected, calculated accident event times are sensitive to the fidelity of the decay power model. During later stages of boiloff, heat transfer or transport of energy from above the water level to the residual water can result in an unstable condition during which the boiloff rate increases greatly. The unstable boiloff phenomenon illustrates the highly nonlinear influence of core heat transfer during meltdown and emphasizes the great accuracy requirements which attend the modeling of the accident during periods of enhanced heat transfer when significant zirconium oxidation is possible.

1981-12-04

147

Physicochemical investigation of the behavior of elements in chloride melts in the presence of solid phases based on phosphates of polyvalent elements. II. Behavior of strontium and barium  

Energy Technology Data Exchange (ETDEWEB)

The distribution of the alkaline earth elements strontium and barium between the solid phases of phosphates of transition elements of group 4 and chloride melts was studied. The distribution coefficients of strontium and barium were found at T = 700-800/sup 0/C. Phosphates of the type NaM/sub 2//sup (IV)/(PO/sub 4/)/sub 3/, where M/sub (IV)/ represents titanium, zirconium, and hafnium, were used as the solid phases. It was established that there is an enrichment of the precipitates with the distributed components. The distribution coefficient depends on the nature of the solid phase and the temperature. It was suggested that M/sup (II)/ x M/sub 4//sup (IV)/(PO/sub 4/)/sub 6/ is formed in processes of distribution, where M/sup (II)/ represents Sr, Ba.

1987-07-01

148

Pd adsorption on Si(1 1 3) surface: STM and XPS study  

Energy Technology Data Exchange (ETDEWEB)

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd{sub 2}Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd{sub 2}Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.

2008-09-30

149

Moessbauer study of mixed valent silicides Eu(Ir_1-_xPd_x)_2Si_2  

International Nuclear Information System (INIS)

The solid solutions Eu(Ir_1_-_xPd_x)_2Si_2, which exist for 0#<=#x#<=#0.125 and 0.75#<=#x#<=#1, cristallize with the tetragonal ThCr_2Si_2-type structure. The variation of the europium valence with composition has been thoroughly studied at temperatures 4.2#<=#T#<=#293 K by "1"5"1Eu Moessbauer resonance. For 0#<=#x#<=#0.125 the europium valence at room temperature decreases as x increases. For 0.75#<=#x#<=#1 the valence transition temperature Eu"3"+#->#Eu"2"+ increases as x increases. (orig.).

150

Microstructure and fracture toughness of hot pressed zirconia-toughened sialon  

International Nuclear Information System (INIS)

Zirconia-toughened sialon composites have been fabricated using conventional hot-pressing techniques. The fracture toughness and microstructure were determined for CeO_2- and Y_2O_3-stabilized ZrO_2 additives and also as a function of volume percent ZrO_2. The Yttria system showed a linear increase in fracture toughness with increasing volume fraction zirconia content while the ceria-stabilized system exhibited a peak in fracture toughness at 20 vol% ZrO_2 content. The fracture toughness at 800 C was measured and correlated with the microstructure. High-temperature stability was determined and it was found that the deleterious nitride phases of zirconium could be precluded from the microstructure.

151

Manufacturing of Austenitic Stainless Steel-Zirconia Composites by Infiltration  

British Library Electronic Table of Contents (United Kingdom)

Abstract Within the framework of the CRC 799 -TRIP-Matrix-Composites- at the TU Bergakademie Freiberg new composite materials consisting of TRIP steel and zirconium dioxide ceramics are designed in a powder route and a casting route. To manufacture faultless samples basic investigations of the feeding and infiltration behaviour within macro porous ceramics such as filters were needed. The effects of bottom pouring and top pouring were investigated as well as the effects of different preheating temperatures, contents of phosphorous in the steel and flow trough rates. Bottom pouring corrupts the feeding mainly of filters with high ppi (pores per inch). Top pouring improves the feeding, but generates inhomogeneous infiltration qualities, which can affected and enhanced by a increasing preheat...

2011-01-01

152

LiNO3 molten salt assisted synthesis of spherical nano-sized YSZ powders in a reverse microemulsion system  

British Library Electronic Table of Contents (United Kingdom)

Spherical nano-sized YSZ (yttria stabilized ZrO2) powders were successfully synthesized via a reverse microemulsion system. The water droplets in the microemulsion system of yclohexane/water/span85/Triton X-100/hexyl alcohol can act as the nano-reactors which solubilize zirconium oxychloride and ammonia water separately. The minute original reactors are favor to the formation of nano-sized spherical YSZ powders and the dispersibility of the powders can be controlled effectually by adjusting the weight ratio of the LiNO3 molten salt to the precursor. The phase transformation from cubic to monoclinic starts at and 500??C and finally monoclinic and cubic phase with increased crytallinity coexist at 800??C. The effect of LiNO3 molten salt in the formation of YSZ powders was also discussed.

2008-01-01

153

Itinerant magnetism of Gd_xLa_1_-_xMSi (M=Fe, Co) compounds  

International Nuclear Information System (INIS)

The magnetic properties of polycrystalline and single crystalline rare earth transition metal silicides Gd_xLa_1_-_xMSi (M =Fe, Co) were investigated. Magnetic measurements have been made in static magnetic fields up to 13 kOe and in pulsed magnetic fields up to 250 kOe in the temperature range from 4.2 to 350 K. The magnetic susceptibility in the paramagnetic state of all the investigated compounds obeys the Curie-Weiss law except for LaFeSi and LaCoSi. Increase of the La content in Gd_xLa_1_-_xFeSi compounds leads to a decrease of the Curie and Neel temperatures, which can be explained by a decrease of positive exchange interactions. (orig.).

1995-09-01

154

Interaction of constituents of the Yb-Pd-Si system in the range of zero to 40 at.% Yb  

International Nuclear Information System (INIS)

Interaction of Yb-Pd-Si system components is studied, isothermal cross section of this system state diagram at 870 K is constructed. Five new ternary silicides are detected in the system: YbPd_5Si_3, Yb_3Pd_2_0Si_6, YbPd_2Si, YbPd_0_,_6_7Si_1_,_3_3, YbPdSi; the existence of one more -YbPd_2Si_2, earlier known, is confirmed. Crystal structure for all the compounds detected is determined and examined. Data on the materials magnetic properties are obtained. It is assumed that YbPd_2Si, YbPd_2Si_2 and YbPdSi compounds appear to be the Condo-systems. 10 refs., 3 figs., 3 tabs.

155

In situ ultrahigh vacuum transmission electron microscopy studies of palladium silicide island formation on silicon (111) 7x7 surface  

International Nuclear Information System (INIS)

Pd was deposited onto Si (111) 7x7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the <110> direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.

2003-01-22

156

I. Evaluation of thin Pd, Pt and Ni silicides Schottky barriers for silicon solar cells. II. Large-area uniform growth of Si layer by solid-phase epitaxy. Final report  

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

1981-01-01

157

FEOL technology trend  

International Nuclear Information System (INIS)

Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide technology are addressed. Trends of local and global interconnect scaling are ...

158

Diffusion examined by diffraction  

Science.gov (United States)

X-ray diffraction offers a unique combination of advantages for kinetic study which include the non-destructive nature of the measurement, the use of bulk crystals, and the convenience of the experimental arrangements. These attributes and the availability of position-sensitive detectors and high-flux synchrotron radiation sources make this technique most useful for in situ, dynamical investigations. When using diffraction techniques to determine a diffusion coefficient, the principle of analysis entails a scattering theory and a kinetic model. The former allows the kinetic parameter(s) to be extracted from measured intensity, while the latter relates the kinetic parameter(s) to the diffusion coefficient(s). Three examples are demonstrated: (1) Palladium Silicide (Pd{sub 2}Si) Layer Growth on Silicon, (2) Decomposition of an Ni-12.5at%Si Superalloy, and (3) Short-range Ordering in Cu-Au Solid Solutions.

159

Development of long-life BF3 counters  

Energy Technology Data Exchange (ETDEWEB)

In order to improve the well-known short operational life time of BF3 counters, three potential adsorbents for impurity gases (graphite, activated charcoal and a zirconium-aluminum mixture) were introduced into BF3 counters in the form of coating on the aluminum cathode surface. Tests in el fields revealed that a partial coating of activated charcoal provides the best result. The improvement of their operational life in el fields was about three orders of magnitude in terms of tolerable exposure. Many counters with a partial coating of activated charcoal were further tested from the following viewpoints: background noise, vibration and shock, el pulse discrimination, operational life in a neutron field and non-operational in-reactor exposure life. The results were satisfactory for reactor control and protection usage. (author).

1985-02-01

160

Behavior of Stress-Relaxation phenomena in Zr-1.1Nb-0.05Cu  

International Nuclear Information System (INIS)

Zirconium alloys have anisotropic mechanical properties depending on their physical orientations and are widely used as nuclear materials such as cladding tube material. An operation condition of the nuclear reactor requires a high creep resistance, because it is subjected to long period operations, high temperature and high pressure. Generally, it takes a few days or months to do the creep experiment, so it is difficult to get a data in short period. However, there is a way to predict a creep property by using the stress-relaxation in the short term. These studies realized the stress-relaxation through a compressive test of HANA-6 (Zr-1.1Nb-0.05Cu) alloy that was developed by KAERI (Korea Atomic Energy Research Institute), and then predicted the creep property

2010-10-01

161

Asymmetrical mechanical behavior of a precipitation hardened beta titanium alloy  

International Nuclear Information System (INIS)

Precipitation-hardened single crystals of a beta (bcc) Ti--40 at. percent V--1.0 at. percent Si alloy were deformed in compression at 77 and 298"0K. The dependence of the yield stress upon aging time at 843"0K for solution-treated crystals shows two maxima which are caused by silicide precipitates. The orientation dependence of the yield stress and of the active macroscopic slip plane were determined as a function of aging time. The solution-treated as well as aged crystals exhibit an asymmetry of both the yield stress and the plane of slip, the degree of asymmetry being larger at 77 than at 298"0K. The asymmetry of slip and yielding is not affected by the presence of precipitation hardening. Results indicate that the effect of the dislocation core structure on dislocation motion is independent of the presence of precipitates. (auth).

162

Alpha-particle dose distribution effects at the cellular level  

International Nuclear Information System (INIS)

Ionizing radiations that differ in number, size, and distribution of energy deposition events might be expected to cause different effects for the same absorbed dose. Furthermore, microdosimetry calculations suggest that large variations in biological effectiveness might be expected for internally deposited alpha-emitting radionuclides for the same absorbed dose, depending upon the specific activity and spatial distribution of the sources in tissue. The study described in this article was designed to demonstrate these phenomena in vitro. Cultured Chinese hamster ovary (CHO-K1 BH4) cells were exposed in vitro to inert, insoluble ceramic microspheres in zirconium dioxide labeled with "2"3"9Pu. The average exit energy of the 5.15 MeV alpha particle was calculated to be 4.3 MeV. Exposure times varied from four to seven hours to achieve the desired dose level.

1985-02-01

163

A state-of-the art report on the investigation of the various corrosion models for zirconium-based alloy  

Energy Technology Data Exchange (ETDEWEB)

The desire to increase uranium utilization and to minimize spent fuel storage requirements provides an incentive to extend the average fuel rod discharge burnup to about 70,000MWd/MTU. For these higher burnups data are needed to determine if waterside corrosion of the cladding may be a life-limiting feature of fuel rod design. It is apparent that many factors can influence waterside corrosion, and these need to be better understood in order to minimize corrosion at these higher target burnups. The objective of this report is to review published data relevant to the corrosion of Zircaloy under PWR operating conditions. (author). 100 refs., 4 tabs., 21 figs.

1999-02-01

164

5 GHz GaAs monolithic astable multivibrator type voltage controlled oscillator  

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

1984-03-01

165

Tantalum nitride and tungsten as diffusion barriers for palladium and cobalt silicides in multilayer metallization schemes  

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical interdiffusion, they may ...

1988-01-01

166

Study of propane partial oxidation on vanadium-containing catalysts  

Energy Technology Data Exchange (ETDEWEB)

The present results indicate that maximum selectivity to acrylic acid can be reached over V-P-Zr-O catalysts. When the hydrocarbon concentration is 5.1 vol.% the selectivity is about 30% at quite high paraffin conversion. Conclusively, some explanations to the observed facts can be given. The V-P-O catalyst promotion with lanthanum by means of mechanochemical treatment is distinguished by the additive uniform spreading all over the matrix surface. Such twophase system is highly active in propane conversion (lanthanum oxide) and further oxidation of the desired products. The similar properties are attributed to V-P-Bi-La-O catalyst. Bismuth, tellurium and zirconium additives having clearly defined acidic properties provoke the surface acidity strengthening and make easier desorption of the acidic product (acrylic acid) from the surface lowering its further oxidation. Additionally, since bismuth and zirconium are able to form phosphates and, ...

1998-12-31

167

Structure and electronic studies of defects in amorphous silicon. Final report, March 1980-February 1981  

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is determined by the ...

1981-08-01

168

Separation of "2"0"3Pb from Tl_2O_3 target material using a hydrous zirconium oxide column with application to "2"0"1Tl preparation  

International Nuclear Information System (INIS)

Lead 203 has been used as a tracer for lead in the field of nuclear medicine for several years. It is produced in a cyclotron usually by proton or deuteron bombardment of a thallium target principally by the p,n or d,2n reaction on "2"0"3Tl or the p,3n or d,4n reaction on "2"0"5Tl. Several different methods have been reported for the separation of "2"0"3Pb from the thallium target. These generally involve a combination of precipitation and solvent extraction techniques. A new method has been developed for the separation of Pb from Tl using ion exchange chromatography over hydrous zirconium oxide (HZO). Lead is taken up by this inorganic ion exchanger at pH > 3 whereas Tl(I) is not. Lead can subsequently be eluted with acid of pH 1-1.5. The recovery of "2"0"3Pb has been approximately 75% and the Tl impurity level has not been in excess of 10 ppm. Reference is made to the application of this separation method to the preparation of "2"0"1Tl from the reaction ...

169

Corrosion properties of thin molybdenum silicide films  

Energy Technology Data Exchange (ETDEWEB)

The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel electrode (SCE). The MoSi{sub 1.9-2.1} films had the best corrosion ...

1997-11-25

170

XPS/AES Study of Electrical and Chemical Properties of Pd/SiC Interface  

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction at the Pd/SiC interface will be discussed. ...

1997-11-01

171

X-ray microanalysis of Al/Zr multilayers in the transmission electron microscope  

International Nuclear Information System (INIS)

A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thin amorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 C a metastable cubic alloy forms at the Zr deposited on Al interface. Upon heating to 485 C a multilayer of Al and metastable ...

1997-04-04

172

Trace metal characterization of the U-Al matrix by atomic spectroscopy  

International Nuclear Information System (INIS)

Uranium-aluminum alloys with a significant enrichment of uranium with "2"3"3U or "2"3"5U serve as nuclear fuels in research reactors. The quality assurance of this fuel requires, among other things, precise knowledge that all trace metal constituents that affect neutron economy, fuel integrity, and fuel fabrication process parameters are well within the specification limits. Trace metal characterization of "2"3"5U-Al alloy has been carried out by atomic spectrometry. The trace metal constituents of interest are grouped into common metals (silver, boron, calcium, cadmium, cobalt, chromium, copper, iron, magnesium, manganese, molybdenum, sodium, nickel, lead, silicon, tin, titanium, vanadium, tungsten, and zinc) and lanthanides (cerium, dysprosium, europium, gadolinium, holminium, lutetium, samarium, and terbium). The elements yttrium and zirconium are grouped with the latter in view of the chemical separation procedure used. The alloy samples are dissolved in 6 M ...

173

Total hemispherical emittance of niobium-1% zirconium fuel cladding for the SP-100 space reactor. Master's thesis  

Energy Technology Data Exchange (ETDEWEB)

Total hemispherical emittance was measured for the SP-100 reactor fuel cladding alloy (Nb-l% Zr). Based on a standard test method (ASTM C 835-82), experiments were conducted on a reference sample of oxidized stainless steel and then on a sample of actual cladding. The sample is heated in a vacuum by passing DC current through it until reaching equilibrium. Measurements are made of the electrical power dissipated in the sample and of the surface temperature. Using the Stefan-Boltzmann Law and some key assumptions concerning conductive and radiative heat transfer, the measured quantities are used to calculate emittance. Calculated values for unoxidized cladding range from 0.159 +/- 5.35% at 913 K to 0.200 +/- 4.51% at 1091 K. Highest value measured after onset of visible oxidation was 0.339 +/- 3.92% at 1269 K.... SP-100, Reactor, Emittance, Niobium, Fuel cladding, Emissivity.

1992-12-01

174

The supply of small scale mock-ups of the primary wall module concepts for ITER  

International Nuclear Information System (INIS)

The present design of Blanket Shield and Primary Wall for ITER envisages construction of the wall with a water cooled, stainless steel outer layer and a water cooled, copper liner on the inside plasma facing surface. Protection of the inner copper surface with an armour layer is necessary to cope with plasma to wall interaction. There are a number of armour materials under consideration, for this project beryllium was used. The scope of work was to produce a series of mock-ups, each consisting of a different combination of materials, which included Dispersion Strengthened Copper, Copper-Chrome-Zirconium alloy, Beryllium and Stainless Steel. Hot Isostatic Pressing (HIP) was the method used to ensure that a fully diffused bonded joint was achieved giving the necessary strength and thermal conductivity. The first five of the mock ups have been successfully completed and are being tested at the various laboratories in Europe. The remaining mock ups are awaiting the ...

1998-09-07

175

The crystal structure of the novel ternary silicide Sm_4Pd_4Si_3  

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

176

Synthesis of nanocrystalline YSZ (ZrO_2-8Y_2O_3) powder by polymerized complex method  

International Nuclear Information System (INIS)

In this study nanocrystalline powders of yttria-stabilized zirconia (ZrO_2-8Y_2O_3) have been synthesized through 'polymerized complex method'. Zirconium chloride, yttrium nitrate, citric acid and ethylene glycol were polymerized at 80 "oC to produce a gel-like mass in which metallic ions were uniformly distributed. During the thermal treatment of dried gel, nanocrystalline powder was formed at 450 "oC and 650 "oC for 2 h. Thermal reactions and crystalline phase formation of the dried gel were investigated through thermal analysis and X-ray diffraction analysis, respectively. The results of thermal analysis and XRD showed the formation of nanocrystalline powder at less than 600 "oC. Chemical bonding of the dried gel was investigated by Fourier transform infrared spectroscopy analysis. Morphology of powder calcined at 650 "oC was analyzed by scanning electron microscope. Yttria-stabilized zirconia powders with the mean crystallite size of 6 nm were prepared ...

2010-02-18

177

Removal of phosphate by mesoporous ZrO{sub 2}  

Energy Technology Data Exchange (ETDEWEB)

A type of mesoporous ZrO{sub 2} was synthesized and its phosphate removal potential was investigated in this study. The adsorption isotherm, pH effect, ionic strength effect and desorption were examined in batch experiments. The adsorption data fitted well to the Langmuir model with which the maximum P adsorption capacity was estimated to be 29.71 mg P/g. The amount of phosphate adsorbed increased rapidly in the first 5 h and slowly towards the end of the run, suggesting the possible monolayer coverage of phosphate ions on the surface of the adsorbent. The phosphate adsorption tended to increase with a decrease of pH and an increase of ionic strength. A phosphate desorbability of approximately 60% was observed with 0.5 M NaOH, which indicated a relatively strong bonding between the adsorbed PO{sub 4}{sup 3-} and the sorptive sites on the surface of the adsorbent. The immobilization of phosphate probably occurs by the mechanisms of ion exchange and physicochemical attraction. Due to its ...

2008-03-01

178

Radiometric analysis of raw materials and end products in the Turkish ceramics industry  

International Nuclear Information System (INIS)

This study presents the findings of radiometric analysis carried out to determine the activity concentrations of natural radionuclides in raw materials (clay, kaolin, quartz, feldspar, dolomite, alumina, bauxite, zirconium minerals, red mud and frit) and end products (glazed ceramic wall and floor tiles) in the Turkish ceramics industry. Hundred forty-six samples were obtained from various manufacturers and suppliers throughout the country and analyzed using gamma-ray spectrometer with HPGe detectors. Radiological parameters such as radium equivalent activity, activity concentration index and alpha index were calculated to assess the radiological aspects of the use of the ceramic end products as decorative or covering materials in construction sector. Results obtained were examined in the light of the relevant national and international legislation and guidance and compared with the results of similar studies reported in different countries. The results suggest ...

2011-05-01

179

Quinary metallic glass alloys  

Energy Technology Data Exchange (ETDEWEB)

At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10.sup.3 K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf).sub.a (Al,Zn).sub.b (Ti,Nb).sub.c (Cu.sub.x Fe.sub.y (Ni,Co).sub.z).sub.d wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d.multidot.y is less than 10 atomic percent, and x/z ...

1998-01-01

180

Polypropylene obtained through zeolite supported catalysts  

Energy Technology Data Exchange (ETDEWEB)

Propylene polymerizations were carried out with {phi}{sub 2}C(Flu)(Cp)ZrCl{sub 2} and SiMe{sub 2}(Ind)2ZrCl{sub 2} catalysts supported on silica, zeolite sodic mordenite (NaM) and acid mordenite (HM). The polymerizations were performed at different temperatures and varying aluminium/zirconium molar ratios ([Al]/[Zr]). The effect of these reaction parameters on the catalyst activity was investigated using a proposed statistical experimental planning. In the case of f{sub 2}C(Flu)(Cp)ZrCl{sub 2}, SiO{sub 2} and NaM were used as support and the catalyst performance evaluated using toluene and pentane as polymerization solvent. The molecular weight, molecular weight distribution, melting point and crystallinity of the polymers were examined. The results indicate very high activities for the syndiospecific heterogeneous system. Also, the polymers obtained had superior Mw and stereo regularity. (author)

2004-07-01

181

Polypropylene obtained through zeolite supported catalysts  

International Nuclear Information System (INIS)

Propylene polymerizations were carried out with #phi#_2C(Flu)(Cp)ZrCl_2 and SiMe_2(Ind)2ZrCl_2 catalysts supported on silica, zeolite sodic mordenite (NaM) and acid mordenite (HM). The polymerizations were performed at different temperatures and varying aluminium/zirconium molar ratios ([Al]/[Zr]). The effect of these reaction parameters on the catalyst activity was investigated using a proposed statistical experimental planning. In the case of f_2C(Flu)(Cp)ZrCl_2, SiO_2 and NaM were used as support and the catalyst performance evaluated using toluene and pentane as polymerization solvent. The molecular weight, molecular weight distribution, melting point and crystallinity of the polymers were examined. The results indicate very high activities for the syndiospecific heterogeneous system. Also, the polymers obtained had superior Mw and stereo regularity. (author)

2004-01-01

182

Oxidation resistance of slurry aluminides on high temperature titanium alloys  

International Nuclear Information System (INIS)

Slurry aluminizing is one method of protecting titanium alloys and intermetallics at temperatures at which oxidation would otherwise significantly degrade mechanical properties. The technique produces a continuous layer of alumina-forming TiAl_3 on exposed surfaces. The influence of composition, film thickness, and diffusion temperature upon the oxidation resistance of these slurry aluminides was studied in cyclic tests to 816degC (1500deg F). Degradation of slurry aluminized #beta#-titanium alloy and #alpha#-Z titanium aluminide intermetallic occurs by localized oxidation at cracks in the coating layer. These cracks are probably due to mismatch of coefficients of thermal expansion between the coatings and substrates. Addition of silicon to the slurry modifies the oxidation behaviour around a crack by introducing a continuous layer of titanium silicide at the boundary of the aluminide coating and substrate, thereby enhancing oxidation resistance. The film thickness ...

183

Manufacturing method of zirconium alloy structural material for reactor core having excellent corrosion resistance, especially, uniform corrosion resistance and hydrogen absorption resistance  

International Nuclear Information System (INIS)

The corrosion resistance of zircaloy is affected by conditions of heat treatment in the manufacturing steps to be formed into a final product as a structural material. In the manufacturing method of the present invention, a Zr alloy controlled to contain Sn: 0.8 to 1.2wt%, Fe: 0.17 to 0.28wt%, Cr: 0.05 to 0.15wt%, Ni: 0.04 to 0.10wt%, Nb: 0.01 to 0.09wt%, oxygen: 1,000 to 1,500ppm and Si, an Si impurity at a concentration of 120ppm or less and balance of Zr is melted into a cast piece, to which #beta# hardening is applied. Then, rolling and annealing treatment are applied so that the total heat input amount to the material: #SIGMA#Ai ranges from 1 x 10"-"1"9 to 1 x 10"-"1"7. With such procedures, a Zr alloy structural material for a reactor core having excellent homogeneous corrosion resistance and hydrogen absorption resistance for a long period of time while having a sufficient strength can be obtained even in a case where Sn content is relatively low as from 0.8 to 1.2wt%. (T.M.).

1997-01-17

184

Low-temperature radiation controlled diffusion of palladium and platinum in silicon for advanced lifetime control  

International Nuclear Information System (INIS)

Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20 min at temperatures 600-800 deg. C) either from surface silicide (Pd_2Si, PtSi) or implanted layers. Results show that this procedure allows a strong localization of substitutional Pd and Pt at the depth where the damage produced by helium peaks. This results in local reduction of carrier lifetime by an almost ideal recombination centers - the acceptor level of substitutional Pd (E _c - 0.22 eV) or Pt (E _c - 0.23 eV). While optimum conditions for Pt in-diffusion are about 700 deg. C, Pd gives the best results already at lower temperatures (600 deg. C) where it also exhibits higher peak solubility. Both methods were used for optimization of turn-off properties of high power PiN diodes. The devices, where the lifetime was killed locally by Pd and Pt, exhibited similar trade-off between the static and dynamic parameters as the ...

2006-12-01

185

Law project adopted by the Senate and authorizing the ratification of the additional protocol to the agreement between France, the European atomic energy community and the international atomic energy agency relative to the application of warranties in France; Projet de loi adopte par le Senat autorisant la ratification du protocole additionnel a l'accord entre la France, la Communaute europeenne de l'energie atomique et l'Agence internationale de l'energie atomique relatif a l'application de garanties en Franc  

Energy Technology Data Exchange (ETDEWEB)

This project of law concerns an additional protocol to the agreement of warranties signed on September 22, 1998 between France, the European atomic energy community and the IAEA. This agreement concerns the declaration of all information relative to the R and D activities linked with the fuel cycle and involving the cooperation with a foreign country non endowed with nuclear weapons. These information include the trade and processing of nuclear and non-nuclear materials and equipments devoted to nuclear reactors (pressure vessels, fuel loading/unloading systems, control rods, force and zirconium tubes, primary coolant pumps, deuterium and heavy water, nuclear-grade graphite), to fuel reprocessing plants, to isotope separation plants (gaseous diffusion, laser enrichment, plasma separation, electromagnetic enrichment), to heavy water and deuterium production plants, and to uranium conversion plants. (J.S.)

2002-10-01

186

In situ ultrahigh vacuum transmission electron microscopy studies of palladium silicide island formation on silicon (111) 7x7 surface  

Energy Technology Data Exchange (ETDEWEB)

Pd was deposited onto Si (111) 7x7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the <110> direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.

2003-01-22

187

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate  

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

2004-06-30

188

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate  

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

2004-06-30

189

Evidence of FCC titanium hydride formation in #beta# titanium alloy: An X-ray diffraction study  

International Nuclear Information System (INIS)

Three types of titanium hydrides have been reported: #delta#, #epsilon# and #gamma# hydrides. The #delta# hydride forms in the composition range from TiH/sub 1.5/ to TiH/sub 1.99/ and has a CaF/sub 2/ structure with metal atoms on an fcc lattice and hydrogen atoms randomly occupying tetrahedral interstitial sites. At higher hydrogen concentrations, TiH/sub 2/, the fct (c/a # #epsilon# transformation is apparently diffusionless, similar to that operating in the cubic/tetragonal transformation in zirconium hydride. The metastable fct #gamma# hydride having a c/a value of 1.09 or 1.12 forms from solid solutions of hydrogen in the hcp #alpha# matrix. While the titanium hydride precipitation in #alpha#-Ti and its alloys has attracted extensive investigation, hydride formation in bcc #beta#-Ti alloys has rarely been studied because they have not been thought to be liable to hydride formation. This paper shows conclusive evidence for the fcc #delta# hydride phase ...

190

Electronic structure and nesting-driven enhancement of the RKKY interaction at the magnetic ordering propagation vector in Gd_2PdSi_3 and Tb_2PdSi_3  

International Nuclear Information System (INIS)

We present first-time measurements of the Fermi surface and low-energy electronic structure of intermetallic compounds Gd_2PdSi_3 and Tb_2PdSi_3 by means of angle-resolved photoelectron spectroscopy (ARPES). We show that the Fermi surface in both compounds consists of an electron barrel at the #GAMMA# point surrounded by spindle-shaped electron pockets originating from the same band, with the band bottom of both features lying at 0.5 eV below the Fermi level. From the experimentally measured band structure, we estimate the momentum-dependent RKKY coupling strength and demonstrate that it is peaked at the 1/2#GAMMA# K wave vector. Comparison with neutron diffraction data from the same crystals shows perfect agreement of this vector with the propagation vector of the low-temperature in-plane magnetic order, thereby demonstrating the decisive role of the Fermi surface geometry in explaining the complex magnetically ordered ground state of ternary rare earth silicides.

2009-03-22

191

Electrometallurgical treatment of aluminum-matrix fuels  

Energy Technology Data Exchange (ETDEWEB)

The electrometallurgical treatment process described in this paper builds on our experience in treating spent fuel from the Experimental Breeder Reactor (EBR-II). The work is also to some degree, a spin-off from applying electrometallurgical treatment to spent fuel from the Hanford single pass reactors (SPRs) and fuel and flush salt from the Molten Salt Reactor Experiment (MSRE) in treating EBR-II fuel, we recover the actinides from a uranium-zirconium fuel by electrorefining the uranium out of the chopped fuel. With SPR fuel, uranium is electrorefined out of the aluminum cladding. Both of these processes are conducted in a LiCl-KCl molten-salt electrolyte. In the case of the MSRE, which used a fluoride salt-based fuel, uranium in this salt is recovered through a series of electrochemical reductions. Recovering high-purity uranium from an aluminum-matrix fuel is more challenging than treating SPR or EBR-II fuel because the aluminum- matrix fuel is typically -90% ...

1996-08-01

192

Electrochemical behavior of zirconium in the LiCl-KCl molten salt at Mo electrode  

British Library Electronic Table of Contents (United Kingdom)

The electroreduction process of Zr(IV) was studied at molybdenum electrode in LiCl-KCl-K2ZrF6 molten salt. The transient electrochemical techniques, such as cyclic voltammetry and chronopotenimetry were used. The experimental results showed that the electrochemical reduction of Zr(II)/Zr and Zr(IV)/Zr(II) were both diffusion-controlled process. In the 773-973K range, the diffusion coefficients of Zr(ii) and Zr(IV) were determined: DZr(II)=0.15567exp{-69.65x10^3RT(K)}cm^2/s, DZr(IV)=1.09x10^-^4exp{-44.39x10^3RT(K)}cm^2/s. The activation energy values for the diffusion process were 69.65kJ/mol and 44.39kJ/mol, respectively.

2011-01-01

193

Effect of silicon ion implantation upon the structure and corrosion resistance of the surface layer of stainless steel 316L, Vitalium and titanium alloy Ti6Al14V  

International Nuclear Information System (INIS)

Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.

194

Corrosion failure and its prevention in light water reactor power plants  

Energy Technology Data Exchange (ETDEWEB)

During 17 years since the start of operation of the first commercial LWR in Japan, many LWRs have experienced various corrosion damages, but the causes of them were clarified, and the counter-measures were executed effectively in actual plants, as the results, the cause of corrosion damage decreased remarkably, and now, the high rate of operation has become to be maintained. In this paper, the major cases of corrosion damage experienced in LWRs in Japan and foreign countries, the causes of them and the countermeasures, the problems of hereafter and so on are described. The corrosion damage of metallic materials in the environment of LWRs occurs in the parts in contact with high temperature, high pressure water and steam, such as stainless steel piping in the primary cooling system of BWRs, and nickel alloy heating tubes of steam generators, carbon steel feed water piping and zirconium alloy fuel cladding tubes in PWRs. Recently, accompanying the advance of LWR ...

1988-01-01

195

Corrosion failure and its prevention in light water reactor power plants  

International Nuclear Information System (INIS)

During 17 years since the start of operation of the first commercial LWR in Japan, many LWRs have experienced various corrosion damages, but the causes of them were clarified, and the counter-measures were executed effectively in actual plants, as the results, the cause of corrosion damage decreased remarkably, and now, the high rate of operation has become to be maintained. In this paper, the major cases of corrosion damage experienced in LWRs in Japan and foreign countries, the causes of them and the countermeasures, the problems of hereafter and so on are described. The corrosion damage of metallic materials in the environment of LWRs occurs in the parts in contact with high temperature, high pressure water and steam, such as stainless steel piping in the primary cooling system of BWRs, and nickel alloy heating tubes of steam generators, carbon steel feed water piping and zirconium alloy fuel cladding tubes in PWRs. Recently, accompanying the advance of LWR ...

196

Contrasting Kondo behavior and resonant inverse photoemission spectra of CeTSi{sub 3} and CeTGe{sub 3} (T=Rh and Ir)  

Energy Technology Data Exchange (ETDEWEB)

We have investigated CeTSi{sub 3} and CeTGe{sub 3} (T = Rh and Ir) by measuring the magnetic susceptibility, specific heat, electrical resistivity, the resonant inverse photoemission (RIPES) and M{sub IV,V} x-ray absorption spectra (XAS). The germanides showed a very weak Kondo effect, but the silicides exhibited a negatively large Weiss temperature (approx. = -130 K) and a lnT dependence of magnetic resistivity above 100 K, suggesting that they are a Kondo-lattice compound with a high Kondo temperature T{sub K} (approx. = 100 K). The Curie-Weiss law suggests that Ce atoms in these compounds remain close to 3+ down to about 150 K in spite of their high T{sub K}. In general, both RIPES and M{sub IV,V} XAS support their apparently stable valency. (author)

1999-02-28

197

Characterization of supported palladium catalysts II. Pd/SiO sub 2  

Science.gov (United States)

The isomerization of neopentane has been investigated over the 0.76 wt% Pd/SiO{sub 2} catalyst. It is found that after high temperature reduction (HTR, at 873 K) the selectivity for isomerization is much higher than that after low temperature reduction (LTR, at 573 K). A variety of experiments, including kinetic, chemisorption (O{sub 2}, H{sub 2}, and CO), temperature-programmed desorption of H{sub 2}, and X-ray diffraction, showed that this selectivity enhancement cannot be interpreted in terms of H{sub 2} retention by catalyst. Instead, the formation of Pd-Si compound(s) (most probably Pd{sub 3}Si) during HTR seems immediately responsible for the catalytic behavior of HTR Pd/SiO{sub 2} catalysts. A mechanism is proposed for the Pd-SiO{sub 2} interaction in which Pd atoms (or ions) are incorporated into the silica support (via oxygen vacancies) and a new phase of palladium silicide is formed. Regeneration by an oxygen treatment of the HTR sample does not fully ...

1989-06-01

198

3D simulations of microstructure and comparison with experimental microstructure coming from OIM analysis  

International Nuclear Information System (INIS)

This paper presents a new methodology to create realistic 3D microstructures of polycrystals. The virtual microstructures are based on statistical data describing the morphological and crystallographic textures of a sample, obtained from an EBSD analysis. In addition, the methodology can reproduce the observed surface on top of the simulated microstructure. This feature allows finite element calculations on these virtual aggregates to be compared to experimental results of mechanical tests. Such a comparison leads to the identification of the mechanical parameters of constitutive laws, such as critical resolved shear stress and strain hardening, using an optimization algorithm. Two materials were simulated in this study: TiAl and grade 702 zirconium. The first one presents twins inside the microstructure and the second one has an anisotropic texture. Based on 2D simulations, the important parameters necessary to describe a microstructure were identified as grain ...

199

The ternary system cerium-palladium-silicon  

International Nuclear Information System (INIS)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of #tau#_8-Ce_3Pd_4Si_4 (U_3Ni_4Si_4-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), #tau#_1_6-Ce_2Pd_1_4Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for #tau#_1_8-CePd_1_-_xSi_x (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of #tau#_5-Ce_3PdSi_3 (Ba_3Al_2Ge_2-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and #tau#_1_3-Ce_3_-_xPd_2_0_+_xSi_6 (0#<=#x#<=#1, Co_2_0Al_3B_6-type, ...

2009-09-01

200

Vibrational dynamics of hydrogen and deuterium in crystalline Pd_9Si_2  

International Nuclear Information System (INIS)

Crystalline Pd_9Si_2 possesses an orthorhombic structure (Pnma) that is characterized by augmented triangular prismatic coordination of the silicon atoms such as that which occurs in several metal-rich transition-metal silicides. Recent neutron diffraction results for deuterium solution in this crystalline phase have indicated that deuterium occupies only one type of interstice, i.e., a Pd-defined pyramidal site in a four-fold position situated on a quadrilateral face of an empty triangular prism. The vibrational dynamics of both H and D located at this site were investigated by neutron vibrational spectroscopy. The low-temperature density of states (DOS) of H in Pd_9Si_2H_0_._2_5 indicates three well-defined optic vibrations located at 49.4, 67.2 and 75.5 meV. The lowest-energy feature is assigned to the normal-mode vibration perpendicular to the pyramidal base and the two higher-energy features are assigned to the two orthogonal normal-mode vibrations parallel to ...

1996-08-25

201

Thermal release of volatile fission products from irradiated nuclear fuel  

International Nuclear Information System (INIS)

An effective procedure for removing _3H, Xe and Kr from irradiated fuels was demonstrated using Shippingport UO"2 fuel. The release characteristics of _3H, Kr, Xe, and I from irradiated nuclear fuel have been determined as a function of temperature and gaseous environment. Vacuum outgassing and a flowing gas stream have been used to vary the gaseous environment. Vacuum outgassing released about 99% of the _3H and 20% of both Kr and Xe within a 3 h at 1500_0C. Similar results were obtained using a carrier gas of He containing 6% H"2. However, a carrier gas containing only He resulted in the release of approximately 80% of the _3H and 99% of both Kr and Xe. These results indicate that the release of these volatile fission products from irradiated nuclear fuel is a function of the chemical composition of the gaseous environment. The rate of tritium release increased with increasing temperature (1100 to 1500_0C) and with the addition of hydrogen to the gas stream. Using crushed UO"2 fuel ...

202

Surface modification of LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-films by zirconium alkoxide/PMMA composites and their effects on electrochemical properties  

Energy Technology Data Exchange (ETDEWEB)

Three kinds of surface modifications were carried out on LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-films to improve the charge and discharge characteristics of LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} positive electrodes. Among them, Zr(OBu){sub 4}/poly(methyl methacrylate) (PMMA)-treated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrodes showed charge and discharge efficiency of 80-84% in the first cycle, which was much higher than that for an untreated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrode (73%). The values of the charge and discharge efficiency were still higher than that for an untreated electrode after the 30th cycle. The charge and discharge curves gave two plateaus at around 4.72 and 4.76 V, which were very similar to those for the untreated electrode. Ac impedance spectroscopy revealed that the surface film resistance should not increase by Zr(OBu){sub 4}/PMMA treatment. XPS measurements suggest that a composite layer should be formed on a LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} ...

2008-10-15

203

Structural and electrical characteristics of epitaxial CoSi{sub 2} grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) by reactive chemical vapor deposition using a Si capping layer  

Energy Technology Data Exchange (ETDEWEB)

Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 {omega}/cm up to the annealing temperature as high as 850 deg. C ...

2004-06-30

204

Structural and electrical characteristics of epitaxial CoSi_2 grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) by reactive chemical vapor deposition using a Si capping layer  

International Nuclear Information System (INIS)

Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi_2 layers with the low sheet resistance value as low as congruent with 4.4 #OMEGA#/cm up to the annealing temperature as high as 850 deg. C without the formation of other cobalt ...

2004-06-30

205

Spectroscopy of /sup 87,88,89/Sr with (n,. gamma. ) and (d,p) reactions  

Science.gov (United States)

Over the recent years the nuclear structure around the N = 50 shell closure, which is very pronounced in the strontium and zirconium isotopes, has been the subject of extensive experimental and theoretical work. On the proton side Z = 38 and Z = 40 provide fairly closed sub-shells. In the strontium isotopes the lg/sub 9/2/ neutron shell is closed at /sup 88/Sr, supplying relatively pure neutron-hole and neutron-particle states with large spectroscopic factors in /sup 87/Sr and /sup 89/Sr, as well as core-coupled states. The mass region is thus ideally suited to examine the transition from a correlated to an uncorrelated (chaotic.) excitational behavior. These two types are characterized e.g. by the density of excited states, the transition strengths, and the spectroscopic factors observed in transfer reactions. We conducted (n,..gamma..) and (d,p) reactions leading to /sup 87,88,89/Sr in addition to /sup 88/Sr(d,t)/sup 87/Sr and 24 keV neutron capture in /sup ...

1988-01-01

206

Spectroscopy of /sup 87,88,89/Sr with (n,#gamma#) and (d,p) reactions  

International Nuclear Information System (INIS)

Over the recent years the nuclear structure around the N = 50 shell closure, which is very pronounced in the strontium and zirconium isotopes, has been the subject of extensive experimental and theoretical work. On the proton side Z = 38 and Z = 40 provide fairly closed sub-shells. In the strontium isotopes the lg/sub 9/2/ neutron shell is closed at "8"8Sr, supplying relatively pure neutron-hole and neutron-particle states with large spectroscopic factors in "8"7Sr and "8"9Sr, as well as core-coupled states. The mass region is thus ideally suited to examine the transition from a correlated to an uncorrelated (chaotic?) excitational behavior. These two types are characterized e.g. by the density of excited states, the transition strengths, and the spectroscopic factors observed in transfer reactions. We conducted (n,#gamma#) and (d,p) reactions leading to /sup 87,88,89/Sr in addition to "8"8Sr(d,t)"8"7Sr and 24 keV neutron capture in "8"8Sr. The vast amounts of data ...

1988-04-24

207

Preparation and Crystal Structure of the Equiatomic Rare Earth Palladium Silicides NdPdSi, SmPdSi, alpha-GdPdSi, and alpha-TbPdSi  

Science.gov (United States)

The title compounds were prepared by arc-melting of the elemental components. Whereas NdPdSi and SmPdSi are already present after the arc-melting, alpha-GdPdSi and alpha-TbPdSi are formed only during the annealing at 800 degC. The four compounds crystallize with the recently reported alpha-YbAuGe type structure, which was refined for alpha-GdPdSi: Pnma, a=2108.0(4) pm, b=433.9(1) pm, c=745.6(1) pm, Z=12, R=0.026 for 1447 structure factors and 62 variable parameters. The lanthanoid atoms are situated between two-dimensionally infinite nets of condensed, puckered hexagons formed by alternating palladium and silicon atoms, with Pd-Si distances varying between 251 and 262 pm. In the third dimension these nets are linked via weak Pd-Pd (300 pm), Pd-Si (283 pm), and Si-Si bonds (261 pm). The refinements of the occupancy parameters suggested that ca. 2% of the palladium sites are occupied by silicon atoms and vice versa. The structural relationships between the two modifications of GdPdSi and ...

1999-01-01

208

Literature information applicable to the reaction of uranium oxides with chlorine to prepare uranium tetrachloride  

Energy Technology Data Exchange (ETDEWEB)

The reaction of uranium oxides and chlorine to prepare anhydrous uranium tetrachloride (UCl{sub 4}) are important to more economical preparation of uranium metal. The most practical reactions require carbon or carbon monoxide (CO) to give CO or carbon dioxide (CO{sub 2}) as waste gases. The chemistry of U-O-Cl compounds is very complex with valances of 3, 4, 5, and 6 and with stable oxychlorides. Literature was reviewed to collect thermochemical data, phase equilibrium information, and results of experimental studies. Calculations using thermodynamic data can identify the probable reactions, but the results are uncertain. All the U-O-Cl compounds have large free energies of formation and the calculations give uncertain small differences of large numbers. The phase diagram for UCl{sub 4}-UO{sub 2} shows a reaction to form uranium oxychloride (UOCl{sub 2}) that has a good solubility in molten UCl{sub 4}. This appears more favorable to good rates of reaction than reaction of solids and ...

1992-02-01

209

Floating zone crystal growth of selected R2PdSi3 ternary silicides  

Energy Technology Data Exchange (ETDEWEB)

Substitution of various rare earths R within the class of R2PdSi3 single crystals with hexagonal AlB2-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds with R = Tb, Tm, Pr, and Gd. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, except of Tb2PdSi3, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. Thin precipitates of RSi secondary phases were detected in the crystal matrix. Their phase fraction can be diminished by growth from Pd-rich melt compositions and annealing treatments. The compounds exhibit antiferromagnetic order below the N el temperatures TN: 23.6 K ...

2011-06-01

210

Evaluation of a novel radiopacifiying agent on the physical properties of surgical spineplex.  

Science.gov (United States)

Polymethlylmethacrylate (PMMA) is the most frequently used cement for percutaneous vertebroplasty and kyphoplasty. To aid visualisation during surgery cements are doped with radiopacifying agents such as Barium sulphate (Ba(2)SO(4)) or Zirconium Dioxide (ZiO(2)). Mounting research suggests that these agents may impair the biocompatibility of the cements. However, incorporating an alternative radiopacifier agent with excellent biocompatibility would be a significant step forward. Bioactive radiopaque glasses incorporating elements such as strontium (Sr) and zinc (Zn), known to have beneficial and therapeutic effects on bone, are of great interest in this respect. In this study, the Ba(2)SO(4) of the commercially available Spineplex was incrementally replaced with a radiopaque therapeutic glass composition. The resulting effects on cement setting time, peak isotherm, ultimate compressive strength, Young's modulus (up to 30 days cement maturation) and radiopacity were ...

2009-08-18

211

Effects of irradiation on the microstructural evolution and corrosion resistance of zirconium alloys  

International Nuclear Information System (INIS)

Zircaloy-2 and Zircaloy-4 tubing materials were irradiated with 1 MeV proton at 350 degrees C to doses of 0.01, 0.1, and 1 dpa respectively. Both microstructure examination and nodular corrosion test (500 degrees C, 1500 psi steam) were performed in order to understand the relationship between the microstructural evolution and the corrosion resistance of these alloys under irradiation. Neutron-irradiated Zircaloy-2 specimens which were obtained from a failed BWR fuel rod cladding were also studied. Specimens of three different neutron fluences were investigated; namely, 2.6x10"2"4, 3.2x10"2"5, 3.8x10"2"5, (E_n#>=#1MeV). The results indicated that the higher the irradiation dose the better the nodular corrosion resistance of both Zircaloy-2 and Zircaloy-4. It is concluded that irradiation-induced precipitate dissolution and irradiation-enhanced diffusion may increase the solute concentration in the matrix and make it distributed more evenly which in turn increases the nodular ...

1991-08-25

212

Effective atomic numbers and electron densities of some biologically important compounds containing H, C, N and O in the energy range 145-1330 keV  

International Nuclear Information System (INIS)

A semi-empirical relation which can be used to determine the total attenuation cross sections of samples containing H, C, N and O in the energy range 145-1332 keV has been derived based on the total attenuation cross sections of several sugars, amino acids and fatty acids. The cross sections have been measured by performing transmission experiments in a narrow beam good geometry set-up by employing a high-resolution hyperpure germanium detector at seven energies of biological importance such as 145.4 keV, 279.2 keV, 514 keV, 661.6 keV, 1115.5 keV, 1173.2 keV and 1332.1 keV. The semi-empirical relation can reproduce the experimental values within 1-2%. The total attenuation cross sections of five elements carbon, aluminium, titanium, copper and zirconium measured in the same experimental set-up at the energies mentioned above have been used in a new matrix method to evaluate the effective atomic numbers and the effective electron densities of samples such as ...

2006-09-28

213

Development and utilization of the inorganic polymer materials for {sup 99}Mo-{sup 99m}Tc and {sup 188}W-{sup 188}Re generator based on (n, gamma) method  

Energy Technology Data Exchange (ETDEWEB)

A molybdenum (Mo) adsorbent called PZC (Poly Zirconium Compound) with high efficiency of Mo adsorption has been developed in order to generate {sup 99m}Tc from {sup 99}Mo produced from natural Mo by (n, gamma) method. The {sup 99m}Tc generator using PZC has cleared mostly the technical subjects. By the results of many experiments, cold and hot test with {sup 99}Mo activity from low level (10{sup 5} Bq) to high level (10{sup 10} Bq), it has been confirmed that the PZC method can be practically applied for the (n, gamma) {sup 99}Mo-{sup 99m}Tc generator. From the reasons that PZC has the ability and many merits such as high adsorption capacity (>250 mg-Mo/g-PZC) of Mo, high elution yield (av. 80%) of {sup 99m}Tc, the low breakthrough (<0.05 kBq-{sup 99m}Mo/MBq-{sup 99m}Tc) of {sup 99}Mo and others, the current (n, fission) {sup 99m}Tc generator utilizing {sup 99}Mo produced from enriched uranium will be taken the place by PZC method. In this paper, the ...

2003-03-01

214

Correlation between mechanical stress and hydrogen-related effects on radiation-induced damage in MOS structures  

Energy Technology Data Exchange (ETDEWEB)

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit remains nearly constant. This compressive stress effect was inhibited by hydrogen ...

1987-12-01

215

Characterization of the parameters at the origin of the chemical species hideout process at the fuel rod surface in boiling conditions  

International Nuclear Information System (INIS)

Current trends in nuclear power generation (and particularly in pressurized water reactors) are toward plant life extension and extended fuel burnup. A higher heat generation rate can induce local boiling regimes at the fuel rod surface in the hottest channels of the core, which can strongly modify the chemical environment of the cladding and influence the oxidation rate of zirconium alloys. Tests performed in out-of-pile loops under severe chemical and thermal-hydraulic conditions (nucleate boiling, higher lithium contents compared to PWRs) reveal two important phenomena: an increase of the oxidation rate of Zircaloy-4 cladding materials in 'high' lithiated environments; an enrichment of the chemical additives in the primary water (boron, lithium) at the surface of the cladding under nucleate boiling conditions. The latter phenomenon, also called 'hideout effect', is mainly controlled by some thermal hydraulic parameters such as bubble diameters and nucleation ...

1999-12-01

216

Anodic protection provided by precipitates in aqueous corrosion of Zircaloy  

Energy Technology Data Exchange (ETDEWEB)

Alloying elements such as Fe and Cr are generally considered to be effective even in small quantities for corrosion resistance of Zircaloy-4. The maximum total solubility of Fe + Cr in a Zr-Sn matrix has been reported to be very low. Therefore, most of these elements are observed in the form of ternary Zr-Fe-Cr-type precipitates. To clarify the effects of precipitates on corrosion property, Zr-1.3 Sn-(Fe,Cr) alloys containing Fe + Cr from 45 up to 180 ppm (the Fe to Cr ratio is about 2) were melted from pure zirconium (X-bar Zr and EB-Zr) and pure alloying elements. They were subjected to corrosion testing in 633 K water and microstructural analysis. It was found that precipitate-free materials showed much larger weight gains than precipitate-containing materials even at the same alloy compositions. Subsequently, a corrosion test on the precipitate-free material galvanically coupled with a noble intermetallic compound of Zr(Fe{sub 0.66}Cr{sub 0.33}){sub 2} was ...

1996-12-31

217

Anodic protection provided by precipitates in aqueous corrosion of Zircaloy  

International Nuclear Information System (INIS)

Alloying elements such as Fe and Cr are generally considered to be effective even in small quantities for corrosion resistance of Zircaloy-4. The maximum total solubility of Fe + Cr in a Zr-Sn matrix has been reported to be very low. Therefore, most of these elements are observed in the form of ternary Zr-Fe-Cr-type precipitates. To clarify the effects of precipitates on corrosion property, Zr-1.3 Sn-(Fe,Cr) alloys containing Fe + Cr from 45 up to 180 ppm (the Fe to Cr ratio is about 2) were melted from pure zirconium (X-bar Zr and EB-Zr) and pure alloying elements. They were subjected to corrosion testing in 633 K water and microstructural analysis. It was found that precipitate-free materials showed much larger weight gains than precipitate-containing materials even at the same alloy compositions. Subsequently, a corrosion test on the precipitate-free material galvanically coupled with a noble intermetallic compound of Zr(Fe_0_._6_6Cr_0_._3_3)_2 was performed. It ...

1995-09-11

218

The ternary system cerium-palladium-silicon  

Science.gov (United States)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of tau{sub 8}-Ce{sub 3}Pd{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), tau{sub 16}-Ce{sub 2}Pd{sub 14}Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for tau{sub 18}-CePd{sub 1-x}Si{sub x} (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of tau{sub 5}-Ce{sub 3}PdSi{sub 3} (Ba{sub 3}Al{sub 2}Ge{sub 2}-type, Immm; a=0.41207(1), b=0.43026(1), ...

2009-09-15

219

Efficient PVD-coatings for roller bearings; Leistungsfaehige PVD-Waelzlagerbeschichtungen  

Energy Technology Data Exchange (ETDEWEB)

On the basis of cylindrical roller thrust bearings it was systematically examined to what extent PVD-coatings are able to take over the function of EP/AW-additives. The bearings were tested under heavy-duty conditions in order to distinguish very fast the efficiency of different coating-substrate-systems. Several coatings were tested for their ability to protect an un-coated counterpart. So just the washers of the roller bearings were coated, the rollers stayed un-coated. Four Me-C:H-coatings showed the best performance and fulfilled the required criterion for roller bearings in the boundary friction: low loss of mass and hardly surface deviation. Material carryover from the carbonaceous coating to the 100Cr6 steel surface was developed by the Me-C:H-coatings during the tests. This mechanism was able to protect the un-coated rollers. Closer investigations were done with an ESMA analysis (electron beam micro range analysis) on ZrC{sub g}-coatings. It could be seen, that a reaction layer ...

2003-11-01

220

A practical {sup 99m}Tc generator using (n, {gamma}) {sup 99}Mo  

Energy Technology Data Exchange (ETDEWEB)

For a new and practical {sup 99m}Tc generator using not (n, f){sup 99}Mo, but (n, {gamma}){sup 99}Mo, an inorganic polymer adsorbent framed with oxygen-zirconium-chlorine bonds with a high adsorption performance of Mo has been developed; the polymer adsorbent was named PZC. The amounts of {sup 99}Mo (Mo) adsorbed are stably more than 250 mg/g(PZC). But, the current experiments with 0.5 MBq to 1.85 GBq of {sup 99}Mo gave a subject that the breakthrough of {sup 99}Mo in the elution of {sup 99m}Tc from the adsorbent was 0.05-0.5 %, although the breakthrough of Zr was less than the detection limit of 5 x 10{sup -2} mg(Zr) to 1 g of PZC, and {sup 99m}Tc was eluted constantly with 78{+-}4%. To apply the adsorbent as a generator commercially in Japan, the {sup 99}Mo breakthroughed from the generator must be suppressed to less than 0.15 kBp({sup 99}Mo)/MBq({sup 99m}Tc) by law which is equivalent to 0.015 %, and the {sup 99}Mo breakthrough is controlled practically to less ...

2000-10-01

221

Forming of Mo and Ti silicides by means of injection molding; Formgebung von Molybdaen- und Titansiliziden ueber das Pulvermetallformspritzen  

Energy Technology Data Exchange (ETDEWEB)

The report describes the processing of TiSi{sub 2}, MoSi{sub 2} and Ti{sub 5}Si{sub 3} by means of metal injection molding (MIM). First, the sintering activities of the three materials were investigated. After this, the viscosities of different mixtures of organic binder and powders of the three materials were determined, and in the final stage, components were produced by injection molding, the binder was removed, and the components were sintered. TiSi{sub 2} in powder form could be sintered to more than 95% of its theoretical density after 4 h at 1386 C. Metallographic analyses proved leaktightness of the component at this density. In the case of Ti{sub 5}Si{sub 3}, it was found that this material requires very long sintering times and high sintering temperatures for sintering to about 94% of its theoretical density. Metallographic analyses showed that only about 90% of the theoretical density was reached. MoSi{sub 2} in powder form could be sintered to only 90% of its theoretical ...

1994-10-01