International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Science.gov (United States)

For a long time, the skeleton was seen as an amorphous tissue of little biological interest. But

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si ...

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Objective is to study the effects of local structure, interatomic forces, and atom size on the mobility of metal atoms in amorphous silica and at the silica surface. EXAFS studies of Zn and Pt in silica are reported. (DLC)

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A process for the generation of halogens from halide-containing solutions includes the step of conducting electrolysis of the solutions in an electrolytic cell having a platinum based amorphous metal alloy anode.

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Slovak May 1981. p. 30. Czechoslovakia Sandrik, R. Kliment, V.

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Experiments were conducted which established that the higher passivating capacity of Ni/sub 60/Nb/sub 40/ alloys in the amorphous state and higher efficiency of the anodic process of generation of chlorine (2 N NaCl + HCl to pH = 0) in comparison with the crystalline state are determined by higher homogeneity and density of the passive films formed on the amorphous alloy and by higher electron conduction which depends directly on the difference in the structure of the passive films formed on the alloys in the amorphous and crystalline states.

International Nuclear Information System (INIS)

Single phase amorphous Al_xHf_1_0_0_-_x alloys with a wide amorphization range (33#<=#x#<=#75) were synthesized by the solid-state interdiffusion of pure polycrystalline Al and Hf powders at room temperature using a rod-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders were investigated by means of X-ray diffraction, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling (0-173 ks) are intermixed to form amorphous phase(s) upon heating to about 980 K by so-called thermally assisted solid-state amorphization (TASSA). The amorphization heat formation for the binary Al_xHf_1_0_0_-_x system via TASSA, ...

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Substantial changes in the radial distribution function of amorphous Si films have been observed in neutron-diffraction studies. The spectra indicate changes in short-range order associated with an approx.11% modification in the bond-angle distribution width. The results allow the first direct comparison of structural and vibrational Raman probes of variations in local order in thin-film amorphous solids. Good agreement is obtained between the measured bond-angle variation and that based on Raman estimates.

International Nuclear Information System (INIS)

Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.

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Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like ...

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Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the ...

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A method of preparing a high temperature superconductor from an amorphous phase. The method involves preparing a starting material of a composition of Bi.sub.2 Sr.sub.2 Ca.sub.3 Cu.sub.4 Ox or Bi.sub.2 Sr.sub.2 Ca.sub.4 Cu.sub.5 Ox, forming an amorphous phase of the composition and heat treating the amorphous phase for particular time and temperature ranges to achieve a single phase high temperature superconductor.

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Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with ...

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We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

International Nuclear Information System (INIS)

It is generally known that a number of metallic glasses have excellent corrosion resistance in a variety of chemically hostile environments. Consequently, the use of laser cladding to coat a massive crystalline material such as aluminium with a layer of a metallic glass has obvious advantages. In this paper, the authors will show that the formation of a predominantly amorphous layer of Zr_6_0Al_1_5NI_2_5 alloy by laser processing is possible, if the obstacles to amorphization are overcome. In addition, evidence of the excellent corrosion resistance of this alloy in a NaCl solution will be given. A comparative study of the corrosion behavior of this amorphous alloy with pure aluminium and Al-Cr alloy will be done, in order to complete previous studies of laser processed coatings of aluminum substrates.

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We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

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The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

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The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

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Density changes in amorphous Pd{sub 80}Si{sub 20} during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%.

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This paper presents recent results concerning the chemical and electrochemical synthesis, the electrochemical properties and the characterization of two new families of amorphous oxides of formula Li{sub x}MVO{sub 4} (1

Science.gov (United States)

Amorphous Pd/sub 80/Si/sub 20/ was irradiated with fast neutrons (>1 MeV) to a fluence of 5 x 10/sup 20/ neutrons/cm/sup 2/. X-ray scattering intensities were measured before and after the irradiation with monochromatic Cu-K..cap alpha../sub 1/ rays. Scattered intensities for s>0.4 A/sup -1/ (s=2 sintheta/lambda) proved unaffected, while intensities were found remarkably enhanced for s<0.4 A/sup -1/ after the irradiation, i.e., in the small-angle region and the leading edge of the first halo. The results are discussed in relation to the structural anomalies in amorphous solids.

International Nuclear Information System (INIS)

#beta#-sialon ceramics of equal overall compositions but containing amorphous, partly crystalline and almost completely crystalline intergranular phase(s) have been oxidized in oxygen at 1350 deg C for 20 hours. The obtained weight gain curves do not follow the parabolic rate law (#DELTA#W/A_0)"2= k_pt + #beta#. To the extent that crystallization occurs in the oxide scale during the oxidation experiment, the amorphous cross section area through which oxygen most easily diffuses will decrease with time. A brief description of this new rate law is given, and the obtained oxidation curves will be discussed within that framework. 4 refs., 2 tabs., 2 figs.

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Internal friction of amorphous Pd/sub 80/Si/sub 20/ metal doped with hydrogen or deuterium was measured with a specially designed apparatus using amorphous metal sheet as a part of the electric oscillating circuit. Two peaks in Q/sup -1/ curve are observed. Applying the peak shift method to the first Snoek-like peak, we can determine the relaxation time from which the microdiffusion coefficient can be calculated. The obtained microdiffusion coefficient is about 10/sup -14/ m/sup 2//s at 200 K, being comparable with the macrodiffusion coefficient obtained from the releasing method. It can, however, not elucidate the hydrogen isotopic effect on the peak temperature of Q/sup -1/ curve, the activation energy for relaxation and the relaxation time from the present work because of the broadness of obtained Q/sup -1/ curve.

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Using the method of high resolution electron microscopy (HEM) the shape and structure of powder particles of elementary amorphous boron, prepared by plasmochemical reduction of boron trichloride by hydrogen before and after their heat treatment in vacuum of approximately 1 x 10 SPa at the temperature of approximately 800 deg C for 30 min, have been studied. It is established, that ultradispersed particles of amorphous boron present flat formations (discs) of stable configurations, composed of several icosahedrons (structural elements); their growth during heat treatment takes place first in habitus plane without far order formation, and then, after attaining the diameter of approximately 500 A, the process of three-dimensional crystallization starts, which leads to the formation of crystal lattice of boron US -rhombohedric modification.

British Library Electronic Table of Contents (United Kingdom)

Fermented sausages were produced with 25%, 50%, 75% or 100% of their pork back fat content replaced by amorphous cellulose gel. The sausage production was monitored with physical, chemical and microbiological analyses. The final products were submitted to a consumer study, and the volatile compounds of the final products were extracted by solid-phase microextraction and analyzed by GC/MS. The reformulated fermented sausages had significant reductions in fat and cholesterol, and the volatile compounds derived from lipid oxidation were also reduced in the final products. These results suggest that the substitution of up to 50% of the pork back fat content by amorphous cellulose gel can be accomplished without a loss of product quality, enabling the production of fermented sausages with the l...

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We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant ...

UK PubMed Central (United Kingdom)

Amorphous silicates having small particles with a large surface area were found to have high nonspecific adsorption capacity. Investigations with Escherichia coli T4 bacteriophage have...Full Text Available

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Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

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An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of ...

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We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles ...

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Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

CERN Document Server

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

International Nuclear Information System (INIS)

The room-temperature anisotropy of amorphous Fe_4_0Ni_3_8Mo_4B_1_8 (METGLAS 2628MB) ribbons after various heat treatments has been studied by Moessbauer spectroscopy. The average magnetization direction becomes significantly more out-of-plane after heating above 650 K but below the crystallization temperature. X-ray diffractograms suggest an atomic rearrangement has occurred. (orig.).

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

International Nuclear Information System (INIS)

Structural changes of a Ni-P amorphous alloy under focused-ion-beam (FIB) irradiation have been examined using transmission electron microscopy. On the irradiated plane, the formation of crystallographically orientated nanosized crystals (NCs), with the particle size of approximately 10 nm, was observed. A series of electron diffraction analyses have revealed that NCs have a face-centered-cubic (fcc) structure and the following orientation relationships between the NCs and the FIB direction were found. These are, irradiated plane//(111)_f_c_c and FIB direction//_f_c_c.

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The total and differential atomic pair-correlation functions of an icosahedral (quasicrystalline) solid were determined for the first time, directly by the differential anomalous-x-ray-scattering technique using synchrotron radiation. The observed atomic distances involving uranium atoms in icosahedral Pd/sub 58.8/U/sub 20.6/Si/sub 20.6/ suggest the presence of a quasicrystalline sublattice with vertex decoration. The pair distribution functions in the icosahedral and amorphous phases are similar up to the second-nearest neighbors, or up to 6 A-circle.

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In order to investigate the role of amorphous SiO{sub 2} particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO{sub 2} was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of {gamma}-phase and amorphous nano-SiO{sub 2} particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO{sub 2} particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite ...

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Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 digit lower defect density than the conventional one of ...

International Nuclear Information System (INIS)

Effect of low-frequency pulsating magnetic field on the microstructure and magnetic properties of amorphous alloy Fe_7_8Si_9B_1_3 were investigated. The temperature rise induced by the treatment was measured by a non-contact infrared thermometer. The crystallization behavior and microstructure of specimens were studied by Moessbauer spectroscopy and transmission electron microscope (TEM). Magnetic properties of the specimens were investigated by alternating gradient magnetometer (AGM). The results show that the low-frequency pulsating magnetic field can promote the single-phase crystallization of amorphous alloy Fe_7_8Si_9B_1_3. The frequency, f of applied field is from 10 to 40 Hz, magnetic field, H is from 0.02 to 0.04 T and treatment duration, t is from 180-300 s. The volume fraction of crystallization phase (#alpha#-Fe(Si), the grain size, 2-10 nm) is 3-7%. The temperature rise less than 7 deg. C. Magnetic properties of samples are improved ...

International Nuclear Information System (INIS)

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min-1. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The ?-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry and ...

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Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

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The distribution of activation energies ..delta.. for classical over-the-barrier hopping is computed for a model amorphous metal. The spread in ..delta.. is determined by the variation in equilibrium-site and saddle-point sizes for the assumed model of dense random packing (DRP) of soft spheres. The size distribution is related to the radial distribution function in a manner which reproduces recent numerical results for the interstitials in DRP models. Size (distance) variation in general is related to energy variation by the form of the potential energy V(r). We show, however, that the distribution of equilibrium-site energies can be related directly to the impurity-induced lattice expansion and bulk modulus without detailed knowledge of V(r). The form of V(r) is necessary for the saddle-point distribution, and we estimate this using simple analytic expressions which fit the observed lattice expansion and impurity (hydrogen) vibrational frequency. The effects of a ...

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In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, ...

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Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

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In-situ TEM investigations during thermal treatment of amorphous Pd{sub 81}Si{sub 19} have been performed. It was found that crystalline nuclei are formed near the perforation edge of the hole produced by electrochemical polishing. After impinging with neighboring crystals, a crystallization front formed which was aligned parallel to the perforation edge. The crystallization front moved in the direction perpendicular to the perforation edge. Crystal growth was found to proceed faster in thinner parts of the specimen than in thicker parts. The results are described qualitatively within a thermodynamic model taking into account volume-, surface- and interfacial free energies and an appropriate specimen geometry.

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Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.

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The transformation from the as-quenched amorphous to the crystalline state in Fe/sub 78/B/sub 13/Si/sub 9/ alloy has been investigated using a new-type neutron diffractometer. The time resolved diffraction patterns clearly show that this alloy crystallizes into FeSi alloy and Fe/sub 2/B in that order. The time evolution of these crystalline phases can be analyzed by the Kolmogorov-Johnson-Mehl-Avrami equation with the exponent of about 2.5 over a wide temperature range. This suggests that the crystallization occurs by the diffusion-controlled growth with a constant nucleation rate. The scaling behavior in the crystallization kinetics is also discussed.

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

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By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.

International Nuclear Information System (INIS)

A ternary nickel-base alloy Ni-W-B has been developed for surface corrosion and wear resistance to replace chromium plating, which uses environmentally hazardous solutions. The deposition conditions used an alkaline bath and insoluble anodes. The as-deposited alloy typically contains 40 wt% W and 1 wt% B and has an amorphous or partially amorphous structure. These deposits compare favorably with hexavalent chromium deposits in throwing power, color uniformity, and reflectivity. The corrosion resistance of Ni-W-B alloy was compared with hexavalent chromium and electroless nickel deposits in a variety of acids, including hydrochloric, sulfuric, fluoroboric, and phosphoric. In all cases, best results were obtained with the Ni-W-B deposits.

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A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.

International Nuclear Information System (INIS)

In the present paper the progress of optimization of soft magnetic properties have been studied by applying different experimental techniques (magnetic measurements, electric measurements, X-ray analysis, and high-resolution electron microscopy observation). It has been shown that an increase in magnetic permeability after optimization annealing can be mainly attributed to annealing out of microvoids. (author)

International Nuclear Information System (INIS)

A-15 compounds are extremely brittle and difficult to process for practical applications. A novel processing technique was developed to greatly improve the mechanical and superconducting properties of A-15 alloys. The new processing technique can be described as follows: (1) to select compounds that can form the A-15 phase (the selected A-15 compounds in this research were Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys); (2) to rapidly solidify them into the amorphous state; (3) to anneal the quenched amorphous products into ultra fine-grained single A-15 phase. The extreme grain refinement greatly improved the flexibility and the critical current density of the alloys. The melt spinning technique was used to rapidly solidify Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys. Ti3Nb6Mo3Si4 alloys were relatively easily formed into the amorphous state. Nb3Al alloys required the addition of glass forming elements Si and B. It ...

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The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.

Science.gov (United States)

Resistivity measurements were performed on Fe40 Ni40 B20 and Pd80 Si20 in order to improve the understanding of structural relaxation in amorphous metals. A model describing structural relaxation as a combination of chemical short range ordering (CSRO) an...

Energy Technology Data Exchange (ETDEWEB)

Nano-sized particles of a lithium ion conductive solid electrolyte, LiTi{sub 2}(PO{sub 4}){sub 3}, were prepared by laser ablation. The obtained particles were ca. 10nm in diameter. X-ray powder diffraction and Raman spectroscopy showed that they were amorphous with local structure similar to the crystalline counterpart. They were crystallized by the heating at ca. 630{sup o}C. (author)

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

Energy Technology Data Exchange (ETDEWEB)

During past two decades, the importance of rechargeable lithium cells has been emphasized and a large variety of materials has been discovered and evaluated for use as reversible cathodes and electrolytes. Materials that undergo intercalation or topochemical reactions with lithium have been investigated as candidates for cathodes in nonaqueous secondary lithium cells (1). Recent interest in researching cathode active materials has mainly focussed on crystalline transition metal chalcogenides. On the other hand, electrochemical behaviors of several amorphous materials have been reported, for example MoS/sub 2/,MoS/sub 3/,V/sub 2/S/sub 5/ (2) and LiV/sub 3/O/sub 8/ (3). However, no successful cycling behavior has been obtained except for MoS/sub 2/ in the amorphous state. This paper reports electrochemical data on rechargeable vanadate glasses in the system V/sub 2/O/sub 5/-P/sub 2/O/sub 5/.

International Nuclear Information System (INIS)

The present work is to study effects of neutron irradiation on the structure of amorphous Pb_8_0 Si_2_0 and Pd_7_7_._5 Cu_6 Si_1_6_._5 alloys by using X-ray diffraction techniques. differential scanning calorimertry (DSC) and internal friction measurements. The irradiation will produce obvious changes in the pair correlation function g(r) and radial distribution function RDF (r). The increase of crystallization temperature (Tx) and enthalpy of two specimens were found by DSC measurements after irradiation. The results of internal friction measurement show that the internal friction of the irradiated Pd_8_0Si_2_0 alloy is higher than that of the unirradiated in the temperature range of T

Science.gov (United States)

Catalytic reactions of 3-methylpentane and 2,3-dimethylbutane on HY, amorphous silica-alumina, and HZSM-5 have been studied at 500{degree}C. Both kinetic phenomena and product selectivities have been reported. Cracking reactions an HZSM-5 can be attributed to initiation through protonation occurring at Bronsted sites. Bimolecular processes leading to chain reaction via hydride transfer are restricted within the narrow pore pentasil zeolite. On HY and amorphous silica-alumina, initiation of cracking also occurs at Bronsted sited. No direct evidence was found for participation of Lewis acid sites on the catalyst framework itself. Following initiation, reactions on these catalysts are accelerated through a chain process occurring at Lewis sites generated by adsorption of product olefins at Bronsted sites. The resulting change in the dominant cracking mechanism is reflected in the product selectivity, illustrated here by a falling off in formation ...

International Nuclear Information System (INIS)

Diffusion during He"+, Ne"+, and Xe"+ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu_6Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the diffusion without irradiation. The data suggest that vacancylike defects play a ...

International Nuclear Information System (INIS)

The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ ...

Energy Technology Data Exchange (ETDEWEB)

Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi/sub 2/ was formed on amorphous Si substrates at 350 /sup 0/C, while NiSi remained stable on crystalline Si substrates even at 400 /sup 0/C. PtSi reacted with Si to form a metastable Pt/sub 4/Si/sub 9/ phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt/sub 4/Si/sub 9/ was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for PdSi on Si in the temperature range of 35--400 /sup 0/C. The ion mixing results were compared with those from thermal annealing. The importance of demixing of a thermally stable system was explored.

International Nuclear Information System (INIS)

The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in rectangular magnetron sputtering systems are discussed.

International Nuclear Information System (INIS)

The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).

International Nuclear Information System (INIS)

Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.

Science.gov (United States)

A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of sublayers with bright and dark contrast. The bright contrast sublayers were amorphous layers with thickness ...

Energy Technology Data Exchange (ETDEWEB)

A combined PVD/PECVD process for the vacuum deposition of titanium containing amorphous hydrogenated carbon films is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-term stability of the plasma process has been demonstrated. Target poisoning has not been observed. We have fabricated optical selective surfaces by the deposition of a-C:H/Ti multilayers onto aluminum substrates. Even though we have not optimized layer thicknesses and stoichiometries so far, the experimental results are promising: solar absorptance {alpha}{sub S} of 0.876 and thermal emittance {epsilon}{sub 100C} of 0.061 have been achieved yielding an optical selectivity sis defined as{alpha}{sub S}/{epsilon}{sub 100C} of 14.4. Accelerated aging tests of these coatings have demonstrated their aging stability: the service lifetime is predicted to amount to more than 25 years. Raman spectroscopy has been used ...

Energy Technology Data Exchange (ETDEWEB)

Chromium containing amorphous hydrogenated carbon films (a-C : H/Cr) have been prepared by simultaneous rf plasma activated chemical vapour deposition of methane and magnetron sputtering of a chromium target. During deposition the substrates were heated (up to 300C) and DC biased (-200 and -600 V) in order to obtain films with high chemical stability. Constant temperature tests were performed at 250C in air with coatings deposited on silicon substrates. The degradation of the coatings was monitored by Raman spectroscopy and reflectance and transmission measurements. The main degradation mechanisms are discussed and the relevant parameters which improve the durability of the coatings are presented. Furthermore, the durability of solar selective, multilayered coatings which were deposited on copper sheets was investigated. Based on accelerated aging tests at different temperature loads in air (at 220C, 250C and 300C) and in a humid environment (80C sample temperature ...

CERN Document Server

Fourier Transform Infrared (FTIR) spectroscopy has been utilized during high rate E-beam evaporation/deposition of YBa2Cu3O7 (YBCO). The results demonstrate the great utility of FTIR as an in situ monitor of YBCO deposition and processing. We detect different (amorphous/fine polycrystalline) insulating pre-existing phases to the high Tc superconducting phase which appear to have distinct reflectivity fingerprints dominated by thin film interference effects, as a function of temperature and oxygen pressure. These fingerprints reveal some of the kinetic and thermodynamic pathways during the growth of YBCO.

Energy Technology Data Exchange (ETDEWEB)

Reinforced (heterogel) silicate materials containing an amorphous and a crystalline phase are being used more and more industry. Such systems are energetically unsaturated and therefore promising for use in catalysts. The authors used two reinforced materials as supports: an aluminosilicate containing a zeolite (the cracking catalyst, tseokar) and asbestos-containing aluminosilicate. The active component was introduced by impregnation, and this was followed by heat treatment during which the chemical composition and porous structure were formed. The impregnating mixture consisted of solutions of potassium sulfate and vanadate of the required concentrations. The testing shows that reinforced heterogel systems are promising as support materials for sulfuric acid catalysts.

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We analyse several amorphous Pdsub(1-x)Sisub(x) alloys obtained by simulation. The metalloid atoms environments can be studied in the same way as that described in the first paper of this series. The main part of this paper is devoted to the evolution of the density as a function of the concentration. In order to interpret the values obtained by the simulation, we develop two models: the first one assumes a complete disorder: the second one, which is shown to be better, assumes a tendency to a local ordering: Si atoms are assumed to have only Pd neighbours.

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

Energy Technology Data Exchange (ETDEWEB)

A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.

Energy Technology Data Exchange (ETDEWEB)

As concern regarding global environmental problems such as the greenhouse effect and acid rain has increased, so too has the demand for commercially viable solar cells as a clean energy source. Interest in amorphous silicon (a-Si) solar cells has been particularly high, due to their low cost. Technological developments in the field of a-Si solar cells are discussed from the viewpoints of fabrication process, materials, and cell structures. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are mentioned

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

Energy Technology Data Exchange (ETDEWEB)

On the basis of observations of the JTEC team, it appears that Japanese universities and research institutes are leading long-term R&D thrusts for development of new materials casting technologies. Significant efforts include amorphous metals, intermetallics, application of MHD in continuous casting of steel, and energy efficient furnace technology. Industrial R&D seems focused more on process improvements than on new product technologies, but significant efforts in new cast materials included cast metal matrix composites, materials substitutions for thinner wall products, and advanced ceramic products for foundry industry applications.

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

Energy Technology Data Exchange (ETDEWEB)

The Cu- and Ni-based bulk metallic glass matrix composites were fabricated by spark plasma sintering of a mixture of gas-atomized metallic glass powders and ductile brass powders. The brass powders added for the enhancement of plasticity are well distributed in the matrix after consolidation. The matrix of the composite materials remains as a fully amorphous phase after consolidation process. With increasing the brass content, the level of plasticity strain increased, although the level of strength decreased. The successful consolidation of metallic glass matrix composite with high density was attributed to viscous flow in the supercooled liquid state during spark plasma sintering.

International Nuclear Information System (INIS)

A simple method allowing easy calculation of the spatial damage energy distributions for ion-implanted materials is presented. The direct procedure takes account of the variation with depth of the lateral spreading of implanted ions, as well as the effects of energy transport by the recoiling target atoms. The subsequent computer program LUPIN-3D provides three-dimensional damage distributions and allows the construction of damage energy mappings. Various substrates of technological interest are investigated and several fields of application of the calculation are envisaged. The density of cascades can therefore be determined and heterogeneous amorphization models can be implemented. (orig.).

International Nuclear Information System (INIS)

We present differential scanning calorimetry (DSC), X-ray diffractometry, in situ Moessbauer spectroscopy (MS), and transmission electron microscopy (TEM) studies in Metglas ribbons subjected to different heat treatments. The temperature evolution of the hyperfine field H_h_f(T) and the Curie temperature (T_c) of the amorphous phase are determined. The magnetic field originally present in the amorphous phase has a 'normal' behavior, in the sense that it can be described by the Weiss molecular field theory. The total angular momentum of the iron atoms turns out to be 5/2 and this implies Fe"3"+ in which the electronic spins are uncoupled. When the samples are maintained near T_c (#approx#673 K), three new magnetic phases are detected in the Moessbauer spectra, indicating an onset of a crystallization process well below the first crystallization temperature (T_X_1), as determined by DSC (#approx#820 K). The magnetic behavior of these phases is ...

Energy Technology Data Exchange (ETDEWEB)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface ...

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Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from ...

International Nuclear Information System (INIS)

Microstructure and electrical properties of iron oxide Fe_2O_3 thin films prepared by spray pyrolysis method have been experimentally characterized. The effect of substrate temperature as well as deposition time on the structural features (crystallite size and microstrain) and electric resistivity of these films has been investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) characterized the structure study. The results of X-ray diffraction showed that with increasing substrate temperature bias the film structure changed from amorphous to crystalline at the same deposition time. At a substrate temperature of 350 deg. C and low deposition time, #alpha#-Fe_2O_3 appears almost in amorphous form. With rising the substrate temperature and deposition time, the crystallinity was improved. At T_s_u_b>350 deg. C, a well-crystallized rhombohedral phase of #alpha#-Fe_2O_3 was obtained. Single order Voigt profile method has been ...

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high resolution SEM and a x-ray diffractometer, ...

Energy Technology Data Exchange (ETDEWEB)

Many investigations of anode materials for lithium-ion secondary batteries have been carried out in order to obtain batteries of higher capacity and energy density. Recently, SnO-based glasses, which were prepared by the usual melt quenching technique, have been proposed as a new anode for lithium-ion secondary batteries by Idota et al. It has been reported that the capacity per unit weight was higher than 600 mAh g{sup {minus}1} and the capacity per unit volume was higher than 2,200 mAh cm{sup {minus}3}, values which are almost double those for carbon materials used as anodes of commercial lithium-ion batteries at present. Thus SnO-based glasses have attracted much interest as high-capacity anode materials for lithium-ion secondary batteries. Amorphous materials in the system SnO-B{sub 2}O{sub 3}-P{sub 2}O{sub 5}, with or without the addition of Li{sub 2}O, were synthesized by mechanical milling treatment of starting oxides in a dry N{sub 2} atmosphere at room ...

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Energy Technology Data Exchange (ETDEWEB)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.

Energy Technology Data Exchange (ETDEWEB)

The Kernel Polynomial Method (KPM) has been successfully applied to tight-binding electronic structure calculations as an O(N) method. Here the authors extend this method to nonorthogonal basis sets with a sparse overlap matrix S and a sparse Hamiltonian H. Since the KPM method utilizes matrix vector multiplications it is necessary to apply S{sup {minus}1}H onto a vector. The multiplication of S{sup {minus}1} is performed using a preconditioned conjugate gradient method and does not involve the explicit inversion of S. Hence the method scales the same way as the original KPM method, i.e. O(N), although there is an overhead due to the additional conjugate gradient part. The authors show an application of this method to defects in a titanate/platinum interface and to a large scale electronic structure calculation of amorphous diamond.

CERN Document Server

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for ...

Energy Technology Data Exchange (ETDEWEB)

This discussion outlines a few areas of fundamental research which appear vital for progress in developing advanced propulsion concepts using dc railgun thrusters. We have placed emphasis on the following: (1) dense plasma and high current density influences on changes in microstructure and properties of conventional rail conductors such as Cu, Al, and W alloys or composites; (2) the influences described in (1) on more advanced high temperature, microstrain resistant, materials such as amorphous tungsten; (3) location, description and temporal evolution of current, magnetic field, and losses during intense plasma-current field interactions with conductors; and (4) composite materials and sequentially sectioned structures for more efficient EM dc launcher configuration.

British Library Electronic Table of Contents (United Kingdom)

Soluble starch?based biodegradable and microporous microspheres (SDM-Ms) were prepared by emulsion chemical cross-linking technique using trisodium trimetaphosphate (TSTP) as the cross-linker. The resultant amorphous SDM-Ms were excellently identified by scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The internal rupture and surface-controlled erosion were the predominant degradation mechanisms for SDM-Ms. The obtained SDM-Ms were applied to adsorb coix seed oil (CSO) by immersing method. The adsorption capacity of CSO within SDM-Ms was determined, namely 0.5238?g/g, and the thermal stability was shown higher than that of the free CSO. A burst release appeared in the second hour, followed by controlled release. Diffusion, d...

British Library Electronic Table of Contents (United Kingdom)

Summary: The surface coverage of amorphous silica gels used in the synthesis of silica polyamine composites has been investigated by 29Si NMR. By diluting the polyamine anchor silane, chloropropyl trichlorosilane, with methyl trichlorosilane it was found that surface coverage could be markedly improved for a range of amine polymers after grafting to the silica surface. The commensurate decrease in the number of anchor points and increase in the number of free amines results in an increase in metal capacity and/or an improvement in capture kinetics. Solid state CPMAS-13C NMR has been employed to investigate the structure and metal ion binding of a series of these composite materials. It is reported that the highly branched polymer, poly(ethyleneimine) (PEI) exhibits much broader 13C NMR res...

Energy Technology Data Exchange (ETDEWEB)

P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

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The use of solvating polymers of polyether type is an interesting solution for the manufacturing of high capacity lithium batteries with lithium metal anodes and which can operate at T > 50 deg. C. These operating conditions are perfectly compatible with electric-powered vehicle and stationary battery applications. In order to improve the ionic conductivity of polymer electrolytes, new aprotic and amorphous polyether lattices have been synthesized having a good conductivity but also good thermal, mechanical and electrochemical stabilities. Two type of 3-D polyether lattices obtained by reticulation of linear pre-polymers have been selected as host polymers: unsaturated poly-condensate and unsaturated co-polyethers. (J.S.) 18 refs.

Energy Technology Data Exchange (ETDEWEB)

Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by previous authors.

Energy Technology Data Exchange (ETDEWEB)

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd{sub 2}Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd{sub 2}Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.

British Library Electronic Table of Contents (United Kingdom)

High molecular weight samples of the novel biodegradable polyester poly(ethylene sebacate) (PESeb) were synthesized. Miscible poly(ethylene sebacate)/poly(4-vinyl phenol) semicrystalline/amorphous blends were prepared by applying the solvent casting method. Miscibility was proved by the single composition dependent glass transition temperature over the entire composition range observed in DSC traces of the quenched blend samples and also by the melting point depression. The Flory-Huggins interaction parameter was found to be x12 = -1.3. Also, FTIR spectra supported the hypothesis of intermolecular interactions due to hydrogen bonding. The crystallization of PESeb in blends was studied. As expected, isothermal crystallization rates decreased in the blends with increasing the PVPh content. T...

International Nuclear Information System (INIS)

The corrosion resistance of molybdenum, molybdenum disilicide, and a SiC_(_p_)/Al_2O_3 composite to molten E-glass at 1,550 C was studied. Mo showed no tendency to oxidize as it was immersed in soda-lime silicate glass in a parallel study. MoSi_2 was corroded by soluble molecular oxygen, leaving a Mo_5Si_3 interface behind. The SiC_(_p_)/Al_2O_3 composite was corroded at a more rapid rate wherein the SiC component was oxidized to form amorphous silica and CO bubbles. Based on these results, the activity of soluble molecular oxygen in E-glass was determined to be in the range of 2.4 x 10"-"1"4 to 2.0 x 10 "-"8.

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The mechanical stability of diamond-like carbon (DLC) films coated on nitinol vascular stents was investigated under cyclic loading condition by employing a stent crimping system. DLC films were coated on the vascular stent of a three dimensional structure by using a hybrid ion beam system with rotating jig. The cracking or delamination of the DLC coating occurred dominantly near the hinge connecting the V-shaped segments of the stent where the maximum strain was induced by a cyclic loading of contraction and extension. However the failures were significantly suppressed as the amorphous Si (a-Si) buffer layer thickness increased. Interfacial adhesion strength was estimated from the spalled crack size in the DLC coating for various values of the a-Si buffer layer thickness.

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Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

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Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

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A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500 degrees C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period.As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions.

Science.gov (United States)

Sensitive and quick-response nonlinear inductance characteristics are found for high Tc superconducting (YBa/sub 2/Cu/sub 3/O/sub 7-chi/) disk cores at 77K in which soft magnetic BH hysteresis loops are observed. Various quick response magnetic devices such as modulators, amplifiers and sensors are built using these cores. The magnetizing frequency can be set to more than 20 MHz, which is difficult for conventional ferromagnetic bulk materials such as Permalloy amorphous alloys and ferrite. New quick-response fluxgate type magnetic-field sensors are made using ac and dc voltage sources. The former is used for second-harmonic type sensors, while the latter is for voltage-output multivibrator type sensors. Stable and quick-response sensor characteristics were obtained for two-core type multivibrators.

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The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

British Library Electronic Table of Contents (United Kingdom)

Lithium phosphorous oxynitride(Lipon) thin films as a lithium ion conductive electrolyte were prepared by radio frequency reactive sputtering in N2 plasma. The properties of the amorphous Lipon solid electrolyte were investigated as a function of N2 pressure during reactive sputtering. The ionic conductivity and the electrochemical stability of Lipon thin films improved drastically as the N2 pressure decreased. The ionic conductivity closed to 10?6 S cm?1 and obtained a stability window of 1.0?5.0 V with an N2 pressure of 5 mTorr, where the number of nitrogen bonds between the phosphate groups were more than those formed at higher pressure. It was possible to fabricate the Li//LiCoO2 complete thin film battery using this Lipon solid electrolyte, which exhibited excellent discharge characte...

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TiB{sub 2} appears to be a promising material for the wear protection in various tribological systems, e.g. the diecasting of Al. This study focuses on the development of titanium boride coatings deposited by PACVD, a deposition method which is most suitable for the coating of substrates with complex shapes. All layers analysed are very smooth and exhibit a quasi-amorphous fracture surface. XRD and TEM analysis indicate a nanocrystalline structure with grain sizes in the order of 2 nm. The diffraction patterns can well be correlated to titanium diboride. WDS reveals an over stoichiometric B/Ti ratio. The layer hardness reaches the value of 33 GPa and the critical load in scratch tests rises to 35 N. Neither 100Cr6 nor Al as a counterpart in pin-on-disk tests leads to wear of the coating. (orig.)

International Nuclear Information System (INIS)

The corrosion behavior of the sputter-deposited amorphous or nanocrystalline W-Nb alloys is studied in 10% NaCl, 0.1 and 1 M NaOH solutions at 24 deg. C, open to air using immersion tests and electrochemical measurements. Niobium metal acts synergistically with tungsten in enhancing the corrosion resistance of the W-Nb alloys so as to show lower corrosion rates than the corrosion rates of the alloy-constituting elements in almost all examined solutions. Corrosion rates of W-Nb alloys are about more than one order of magnitude less than that of the sputter-deposited tungsten and even lower than that of sputter-deposited niobium. The stability of the anodic passive films formed on the W-Nb alloys increase with niobium content.

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Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

International Nuclear Information System (INIS)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.

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This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL's in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy's National Photovoltaic Research Program plans.

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The nanocrystallization process of amorphous Fe_7_3_._5Si_1_3_._5B_9Nb_3Cu_1 was investigated by active screen plasma nitriding (ASPN) treatment at temperatures ranging from 410 "oC to 560 "oC for 3 h in two gas mixtures of 75% N_2-25% H_2 and 25% N_2-75% H_2 at 5 mbar atmosphere. The amorphous ribbons were then annealed under vacuum at the same time and temperatures mentioned above. The structure of the samples was analyzed using various techniques such as X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). Microhardness measurements, electrical resistivity and Vibrating Sample Magnetometer (VSM) were used to study mechanical, electrical and magnetic properties of the samples, respectively. It was observed that the ASPN treatment leads to finer grain size and higher crystalline volume fraction and modifies the structural features of Fe(Si) phase. The Fe(Si) lattice parameter for the nitrided ...

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Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF_4) and acetylene (C_2H_2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF_4/(CF_4+C_2H_2). The samples were annealed at 300 deg. C for 30 min. in a N_2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF_4 flow ratio (R=0.97) produced more sp"3 linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 #mu#s and an energy gap of #approx#2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in ...

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A processing technique for A-15 compounds which has improved mechanical and superconducting properties has been developed. This technique consists of rapid solidification of the alloy by the chill block spinning machine (CBSM) to form amorphous ribbons and by subsequent annealing crystallizes the stable or metastable fine grain flexible A-15 structure. The CBSM has been modified so that all the processing parameters could be controlled and optimized for each alloy composition. By the improved CBSM it was possible to form amorphous Nb{sub 3}Si, Nb{sub 3}Ge and Nb{sub 3}(AlSi) ribbons with more than 80% reproducible rate. Critical current density measurements are limited by contact resistance. A Cu plating technique was introduced in this research that made the contact resistance three orders of magnitude lower than that obtained by other methods. This plated coating also gave an additional mechanical support to the sample and acted as a shunt ...

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As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to evaluate the effects of ...

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The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT ...

Science.gov (United States)

The applicability of Pd/sub x/Ta/sub 1-x/ as a diffusion barrier on Si has been investigated. For this purpose Pd/sub x/Ta/sub 1-x/ films of 200 nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between over-layer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as-deposited Pd/sub x/Ta/sub 1-x/ films with 0.2 less than or equal to x less than or equal to 0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing a discontinuous step in the reaction temperature. RBS spectra revealed that for the Pd-rich compositions first a stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi2 formed at the surface. For Ta-rich compositions Pd2Si formed first as well, however, the reaction temperature was so high that Pd2Si grains formed in a Si ...

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In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer on the silicon nitride powder, crystallize partially into YAM ...

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Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. Among them hexagonal columnar CoIh ...

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Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of ...

Science.gov (United States)

Comparative patterns of equilibrium adsorption of argon on the surface of graphitized thermal carbon black (GCB) and the inhomogeneous surfaces of nongraphitized carbon black and silica at 77 and 87.3 K were considered. It was shown that argon acquires the properties of a special phase with a layered structure and exhibits two-dimensional phase transitions with the formation of crystal-like layers near the homogeneous surface of GCB even at a temperature exceeding the triple point. However, already at a distance of three-four molecular diameters from the surface, adsorbed argon behaves as a bulk phase in a weak external field. The defect surface of nongraphitized carbon black and the amorphous surface structure of silica destroy the longrange order of adsorbed argon and lower its solidification temperature. Therefore, argon adsorbed at a temperature of 77 K, i.e., below the triple point, exhibits the properties of a supercooled liquid. The applicability of density ...

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The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the ...

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The reactive evaporation process was successfully used to deposit films of the A-15 Nb_3Ge phase. This is the first report, to the best of our knowledge, illustrating the use of such processes for the deposition of A-15 compounds. In this process, niobium vapors from an electron-beam-heated evaporation source react with germane gas introduced into the vacuum chamber at low partial pressures (approximately 10"-"4 Torr) to produce Nb_3Ge deposits. The process variables studied were the deposition temperature, the niobium-to-germanium impingement ratio on the substrate and the plasma-enhanced deposition, in this case the activated reactive evaporation process. At low deposition temperatures (below 450"0C) the deposit is amorphous (or microcrystalline) and can be crystallized to the Nb_3Ge phase by heat treatment, e.g. at 850"0C for 1 h in vacuum. The ratio of niobium to germanium in the deposit can be varied by changing the process parameters. The films are ...

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Multilayer mirrors for the extreme ultraviolet (EUV) are keyelements for numerous applications of coherent EUV sources such as newtabletop lasers and free-electron lasers. However the field ofapplications is limited by the radiation and thermal stability of themultilayers. Taking into account the growing power of EUV sources thestability of the optics becomes crucial. To overcome this problem it isnecessary to study the degradation of multilayers and try to increasetheir temporal and thermal stability. In this paper we report the resultsof detailed study of structural changes in Sc/Simultilayers when exposedto intense EUV laser pulses. Various types of surface damage such asmelting, boiling, shockwave creation and ablation were observed asirradiation fluencies increase. Cross-sectional TEM study revealed thatthe layer structure was completely destroyed in the upper part ofmultilayer, but still survived below. The layers adjacent tothe substrateremained intact even through the ...

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The surface coverage of amorphous silica gels used in the synthesis of silica polyamine composites has been investigated by 29Si NMR. By diluting the polyamine anchor silane, chloropropyl trichlorosilane, with methyl trichlorosilane it was found that surface coverage could be markedly improved for a range of amine polymers after grafting to the silica surface. The commensurate decrease in the number of anchor points and increase in the number of free amines results in an increase in metal capacity and/or an improvement in capture kinetics. Solid state CPMAS-13C NMR has been employed to investigate the structure and metal ion binding of a series of these composite materials. It is reported that the highly branched polymer, poly(ethyleneimine) (PEI) exhibits much broader 13C NMR resonances than the linear polymers poly(allylamine) (PAA) and poly(vinylamine) (PVA). These results are understood in terms of the low energy conformations calculated from molecular modeling ...

International Nuclear Information System (INIS)

Studying the structure of nanoparticles as a function of their size requires a correlation between the image and the diffraction pattern of single nanoparticles. Nanobeam diffraction technique is generally used but requires long and tedious TEM investigations, particularly when nanoparticles are randomly oriented on an amorphous substrate. We bring a new development to this structural study by controlling the nanoprobe of the Bright and Dark Field STEM (BF/DF STEM) modes of the TEM. The particularity of our experiment is to make the STEM nanoprobe parallel (probe size 1 nm and convergence angle <1 mrad) using a fine tuning of the focal lengths of the microscope illumination lenses. The accurate control of the beam position offered by this technique allowed us to obtain diffraction patterns of many single nanoparticles selected in the digital STEM image. By means of this technique, we demonstrate size effects on the order-disorder transition temperature in CoPt ...

International Nuclear Information System (INIS)

The differential recoil cross sections of H have been determined for 1.5-3.0 MeV He"+ incidence. In order to obtain precise data, we have performed simultaneous detection and spectrum simulation of recoiled H and backscattered He. In addition, a careful cross check has been made by secondary ion mass spectrometry (SIMS). The present results have revealed a pronounced contribution from a nuclear short-range interaction. The He"+ energy and recoil angle dependence of the H recoil cross sections are well reproduced by adding the nuclear term, which is simply derived from effective range theory. Our computer simulation program of elastic recoil combined with Rutherford backscattering spectra makes it possible to determine the depth distributions of H together with other elements absolutely, without any ambiguities. The present elastic recoil analysis is employed to determine the H composition of amorphous Si(H) films deposited on Si wafers. An excellent agreement, ...

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We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}

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Pitting behavior of alloy 800 was investigated as a function of temperature and prefilming in high-temperature water. The behavior was characterized in terms of pitting potential (U{sub p}) and pit density (n{sub p}). U{sub p} decreased with increasing temperature and chloride activity. Prefilming of test coupons over a period between 100 h and 5,000 h in ammoniated water at 300 C had no apparent influence on U{sub p} at room temperature, 180 C, and 300 C. However, the number of pits in prefilmed coupons was much higher than in coupons covered with an air passive layer. The effect of prefilming on pit nucleation was investigated in detail with regard to a model and test methods developed by Bianchi, et al. Density of pits in prefilmed coupons was at least 1 order of magnitude higher than in air passive coupons. Maximum pit density was measured after a prefilming period of 100 h. The effect was discussed in terms of Bianchi`s model and in terms of features of passive films. The ...

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Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T _s #<=# 450 deg. C were amorphous; while those produced at T _s_u_b = 500 deg. C were polycrystalline #alpha#-Fe_2O_3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the visible and infrared range. The cyclic voltammetry study showed that the films of ...

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Sputter-deposited tantalum (Ta) and reactively sputter-deposited Ta-nitride films were studied with respect to the passivation capability against copper (Cu) oxidation in thermal O{sub 2} ambient. A 200 {angstrom} Ta or Ta-nitride film was sputter-deposited on a 2,000 {angstrom} Cu film using a Ta target in an Ar/N{sub 2} gas mixture. With Ta passivation, Cu was not oxidized at temperatures up to 400 C, which can be further improved by using passivation of an amorphous Ta-nitride film deposited in an appropriate condition. The absence of long-range defects in the Ta-nitride film was presumably responsible for this improvement. However, sputtering-induced surface damage by excess N{sub 2} in the sputter gas mixture may reduce the passivation capability of Ta-nitride films. When the passivated Cu was oxidized, the Cu oxides always resided in the top surface region. That is, in the oxidation process, Cu diffused through the defects of the passivation layers to the ...

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Polysaccharides like cellulose and chitosan are known for their filmic properties. This paper concerns the synthesis and the study of chitosan-based polymer electrolytes. A preliminary work concerns the study of glucosamine reactivity. The poly-condensation of chitosan ethers (obtained by reaction with ethylene oxide or propylene oxide) with bifunctional and monofunctional oligo-ethers leads to the formation of thin lattices (10 {mu}m) having excellent mechanical properties. The presence of grafted polyether chains along the polysaccharide skeleton allows to modify the vitreous transition temperature and the molecular disorder of the system. Two type of polymer electrolytes have been synthesized: electrolytes carrying a dissolved alkaline metal salt and ionomers. The analysis of their thermal, dynamical mechanical, nuclear magnetic relaxation, electrical, and electrochemical properties shows that this new class of polymer electrolytes has the same performances as ethylene poly-oxide ...

International Nuclear Information System (INIS)

Ga"+ focused ion beam (FIB) patterning was used to structure highly oriented pyrolytic graphite surfaces with square, periodic arrays of amorphous carbon defects (mesh sizes: 300 nm-2 #mu#m). Controlled oxygen etching of these arrays leads to matrices of uniform, orientationally aligned, nm-sized, hexagonal holes. The properties of the resulting hole assembly (hole depths and lateral hole dimensions) have been investigated by means of atomic force microscopy, scanning electron microscopy and FIB sectioning. The hole dimensions and uniformity both depend on the FIB parameters and etching conditions. Etching temperatures from 500 to 700 deg. C were applied. Initial etch rates of up to 10"6 C s"-"1 per individual hole were observed when using oxygen pressures of 200 mbar. For an etch temperature of 590 deg. C the rate of etching of individual holes was found to depend measurably on the inter-hole separation. This confirms that the associated reaction kinetics is ...

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The microstructure of the secondary deformation zone (SDZ) near the cutting surface in metal chips of Ti-6Al-4V formed during machining was investigated using focused ion beam (FIB) specimen preparation and transmission electron microscopy (TEM) imaging. Use of the FIB allowed precise extraction of the specimen across this region to reveal its inhomogeneous microstructure resulting from the non-uniform distribution of strain, strain rate, and temperature generated during the cutting process. Initial imaging from conventional TEM foil preparation revealed microstructures ranging from heavily textured to regions of fine grains. Using FIB preparation, the transverse microstructure could be interpreted as fine grains near the cutting surface which transitioned to coarse grains toward the free surface. At the cutting surface a 10 nm thick recrystallized layer was observed capping a 20 nm thick amorphous layer.

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It is thought that iron-based catalysts for coal liquefaction exercise their catalytic activity by forming pyrrhotite (Fe(1-x)S). However, there are still a lot of unknown problems remained concerning the formation and agglomeration behaviors of pyrrhotite. These make a difficulty for improving the activity of iron-based catalysts. In this study, sulfiding behaviors of {alpha}-iron oxyhydroxide ({alpha}-FeOOH) and {gamma}-iron oxyhydroxide ({gamma}-FeOOH) were investigated to reveal the formation and agglomeration behaviors of pyrrhotite. It was found that pyrrhotite was easily converted from ferric oxyhydroxide catalysts having large specific surface areas at the sulfiding temperature below 250{degree}C, and fine crystallites of pyrrhotite were formed at the initial stage of sulfiding. Crystal growth of pyrrhotite at the sulfiding temperature over 350{degree}C depended on the catalyst forms. It was also found that smaller crystallites of pyrrhotite were formed from {gamma}-FeOOH than ...

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Excimer laser processing enables both thermally-driven transformations and the incorporation of solutes into the surface of materials through melting and diffusional mixing. We have examined the effect of excimer laser processing on the microstructure and surface mechanical properties of titanium alloys. Changes in the surface hardness due to laser processing were studied using a Nanoindenter [trademark]. Alloying experiments using both mixing of evaporated surface layers of boron and laser gas alloying in air and in nitrogen all result in changes in the surface hardness of the material. Alloying with boron results in an amorphous surface which is somewhat harder than the as polished surface. Laser processing in air and pure nitrogen results in incorporation of oxygen and nitrogen and the development of fine ([approximately] 50 nm) precipitates of TiO and TiN respectively. Substantial increases in surface hardness result due to solution and precipitation ...

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Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results are discussed in comparison with their ...

International Nuclear Information System (INIS)

Buried silicon carbide (SiC) microstructures with lateral dimensions in the #mu#m range were formed by high-dose projection of 1.5 MeV C"2"+ ions in Si(100) at different doses and temperatures and subsequent annealing for 10 h at 1250 deg. C. Sections of individual SiC microstructures were prepared for cross-sectional transmission electron microscopy (TEM) analysis using a focused ion beam (FIB). Besides the possibility to select an individual microstructure, the FIB technique has the advantage of producing specimen foils of uniform thickness. Therefore, it was possible to map the carbon concentration of microstructures by energy filtered TEM (EFTEM) using the C_K absorption edge without the need of any sample thickness correction. Local overstoichiometric (>50%) carbon concentrations are shown to be correlated to the formation of an amorphous phase in the SiC and to significant swelling visible at the Si wafer surface 2 #mu#m above.

Science.gov (United States)

In an era of unprecedented technological advancement and economic expansion, construction practice continues to evolve but construction education has not changed appreciably since the 1990s. This schism has prompted industry, government, and other key constituents to question the relevancy and efficacy of current programs. The Accreditation Board for Engineering and Technology (ABET) Engineering Criteria 2000 and the American Council for Construction Education (ACCE) emphasizes outcomes over process, and provides an opportunity for stakeholders to help universities define educational goals and objectives and design a curriculum to meet the desired outcomes. While the need for curriculum modification has been acknowledged, the industry position was amorphous and anecdotal and therefore difficult to address. Qualitative methodologies such as formal surveys and structured interviews can be used to capture and quantify industry expectations of the needed attributes ...

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

Energy Technology Data Exchange (ETDEWEB)

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy ...

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MmMg{sub 12}-Ni amorphous or nanocrystalline composites (Mm: Ce-rich mischmetal) were prepared through the ball-milling method, and their electrochemical hydrogen storage performance was investigated and compared with that of ball-milled CeMg{sub 12}-Ni composites. It was found that the ball-milled MmMg{sub 12}-Ni composites had larger initial discharge capacities and better high rate dischargeability. Analysis of electrochemical impedance spectra (EIS) shows that the reaction resistance and hydrogen diffusion resistance of the ball-milled MmMg{sub 12}-Ni composites are lower as a result of the decrease in Ce content, and thus can contribute to the larger discharge capacity and better high rate dischargeability. Additionally, the cycle performance of the ball-milled MmMg{sub 12}-Ni composites is better than those of the ball-milled CeMg{sub 12}-Ni composites. This may be related to the formation of a Nd oxide or Nd(OH){sub 3} film on surface of the MmMg{sub 12} ...

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In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative Ostwald ripening process during ...

International Nuclear Information System (INIS)

In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical properties are depended strongly on the substrate temperature.

International Nuclear Information System (INIS)

(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Energy Technology Data Exchange (ETDEWEB)

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the performance of caesium iodide/amorphous silicon ...

International Nuclear Information System (INIS)

Research was conducted at Pacific Northwest Laboratory to develop high photosensitivity adaptive optical elements utilizing ion implanted lanthanum-doped lead-zirconate-titanate (PLZT). One centimeter square samples were prepared by implanting ferroelectric and anti-ferroelectric PLZT with a variety of species or combinations of species. These included Ne, O, Ni, Ne/Cr, Ne/Al, Ne/Ni, Ne/O, and Ni/O, at a variety of energies and fluences. An indium-tin oxide (ITO) electrode coating was designed to give a balance of high conductivity and optical transmission at near uv to near ir wavelengths. Samples were characterized for photosensitivity; implanted layer thickness, index of refraction, and density; electrode (ITO) conductivity; and in some cases, residual stress curvature. Thin film anti-ferroelectric PLZT was deposited in a preliminary experiment. The structure was amorphous with x-ray diffraction showing the beginnings of a structure at substrate temperatures of ...

Energy Technology Data Exchange (ETDEWEB)

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the as-deposited and ...

CERN Document Server

Laboratory characterization of Interplanetary Dust Particles (IDPs) collected in the lower stratosphere represents a concrete analysis of cosmic dust properties which played a fundamental role in the origin and evolution of Solar System. The IDPs were characterized by Field Emission Scanning Electron Microscope (FESEM) analyses and by InfraRed (IR) micro-spectroscopy. We present the FESEM images of six IDPs: three smooth grains, two porous and one a compact sphere. We also show the results of micro-IR transmission measurements on four IDPs that allowed us to identify their spectral class according to the criteria defined by Sandford and Walker. Only three of the analyzed particles show IR transmission spectra with a dominant "silicate absorption feature" so that they could be assigned to the three IR spectral classes: one has been classified as "amorphous olivine", one appears to be a mixture of "olivines" and "pyroxenes" and one belongs to the "layer-lattice ...

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Results from four chemical-equilibrium computer programs, REDEQL.EPAK, GEOCHEM, WATEQF, and SENECA2, have been compared with experimental solubility data for some simple systems of interest with geothermal brines. Seven test cases involving solubilities of CaCO/sub 3/, amorphous SiO/sub 2/, CaSO/sub 4/, and BaSO/sub 4/ at various temperatures from 25 to 300/sup 0/C and in NaCl or HCl solutions of 0 to 4 molal have been examined. Significant differences between calculated results and experimental data occurred in some cases. These differences were traced to inaccuracies in free-energy or equilibrium-constant data and in activity coefficients used by the programs. Although currently available chemical-equilibrium programs can give reasonable results for these calculations, considerable care must be taken in the selection of free-energy data and methods of calculating activity coefficients.

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The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at substrate temperatures of 50 C and annealed up to ...

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Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a SiC-Al2OC liquid domain is to be included in this phase diagram.

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion ...

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and responsible for TED. This initial ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...

Energy Technology Data Exchange (ETDEWEB)

After an international ideas competition by TNC Switzerland and Germany in 1996, six companies where given the opportunity to construct a prototype of their newly developed integrated PV-sound barrier concepts. The main goal was to develop highly integrated concepts, allowing the reduction of PV sound barrier systems costs, as well as the demonstration of specific concepts for different noise situations. This project is strongly correlated with a German project. Three of the concepts of the competition are demonstrated along a highway near Munich, constructed in 1997. The three Swiss installations had to be constructed at different locations, reflecting three typical situations for sound barriers. The first Swiss installation was the world first Bi-facial PV-sound barrier. It was built on a highway bridge at Wallisellen-Aubrugg in 1997. The operational experience of the installation is positive. But due to the different efficiencies of the two cell sides, its specific yield lies ...

Energy Technology Data Exchange (ETDEWEB)

The corrosion behaviour of the stainless steels 304, 316 Ti, 25Cr-20Ni-Mo-Ti, nickel base alloys Hastelloy C4, Inconel 625, Incoloy 800, Ti and Ti-0.2% Pd alloy has been studied in the aerated or deaerated solutions at 20/sup 0/C and 90/sup 0/C whose compositions are representative of interstitial ground waters: granitic or clay waters or salt brine. The electrochemical techniques used are voltametry, polarization resistance and complexe impedance measurements. Electrochemical data show the respective influence of the parameters such as temperature, solution composition and dissolved oxygen, addition of soluble species chloride, fluoride, sulfide and carbonates, on which depend the corrosion current density, the passivation and the pitting potential. The inhibition efficiency of carbonate and bicarbonate activities against pitting corrosion is determined. In clay water at 90/sup 0/C, Ti and Ti-Pd show very high passivation aptitude and a broad passive potential range. Alloying Pd ...

International Nuclear Information System (INIS)

As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO_3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed material. These platelets ...

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ions bombarding the growing films were determined on the basis ...

Energy Technology Data Exchange (ETDEWEB)

Several Mg-Y binary ribbons with Y content up to {approx}17.9 at.% were fabricated by melt-spinning. X-ray diffraction (XRD) revealed that the phase structure changes with increasing Y content from extended solid solution to partially amorphous, and then fully intermetallic Mg{sub 24}Y{sub 5}. Anodic potentiodynamic polarization performed in 0.01 M NaCl electrolyte (pH=12) revealed improved anodic passivity behavior compared to pure Mg for all the Mg-Y alloys. X-ray photoelectron spectroscopy (XPS) revealed that the improved passivity of Mg-Y was more related to the elemental oxidation state rather than the concentration of the surface components. To study the effect of Cl{sup -} ion on the passivity behavior, anodic potentiodynamic and potentiostatic polarization were performed on Mg-17.9 at.% Y in alkaline (pH=12) NaCl electrolytes containing Cl{sup -} ion in the concentration range from 0.00 to 0.50 M. The passive films formed in 0.01 M NaCl electrolyte were ...

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Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the sputtering targets, the background gases, and the substrate surfaces. Auger Electron Spectroscopy (AES) results showed the presence of O and C contamination near the ...

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are the reasons for some similarities and many differences in defect types and thermal ...

International Nuclear Information System (INIS)

A combined application of several microtechniques is presented and discussed with the Ti/TiO_2 and Zr/ZrO_2-systems as an example. All measurements were carried out on single grains of technical materials in order to detect and quantify the effect of substrate microstructure on the properties of anodic passive films formed potentiodynamically in 0.5 M H_2SO_4 (dU/dt = 20 mVs"-"1). Anisotropy-micro-ellipsometry (AME) was employed to determine the crystallographic orientation of the substrate grains along with passive film thickness and crystallinity in dependence on the anodization potential. Both the isotropic (amorphous) TiO_2- and the anisotropic (crystalline) ZrO_2-films exhibit a systematic dependence of film thickness on the grain orientation. Local LASER-scanning photocurrent measurements (#lambda#=257 nm) on the same grains likewise show a heterogeneity of the photoelectrochemical reactivity in all cases. This is quantitatively explained by the results from ...

Energy Technology Data Exchange (ETDEWEB)

A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening process than pure ...

Energy Technology Data Exchange (ETDEWEB)

The advent of light metal alloys and advanced materials (polymer, composites, etc.) have brought the possibility of achieving important energy reductions into the full life cycle of these materials, especially in transportation applications. 1 These materials have gained acceptance in the aerospace industry but use of light metal alloys needs to gain wider acceptance in other commercial transportation areas. Among the main reasons for the relatively low use of these materials are the lack of manufacturability, insufficient mechanical properties, and increased material costs due to processing inefficiencies. Considering the enormous potential energy savings associated with the use of light metal alloys and advanced materials in transportation, there is a need to identify R&D opportunities in the fields of materials fabrication and forming aimed at developing materials with high specific mechanical properties combined with energy efficient processes and good manufacturability. ...

Energy Technology Data Exchange (ETDEWEB)

This thesis is concerned with the crystallisation behaviour of polymers near to a free surface or a buried interface. The properties of polymers are expected to differ significantly near to an interface (either with air or another polymer), due to the contributions of (a) chain configurations induced at the interface, and (b) different mobilities between interfacial regions and the bulk of the sample. For a semi-crystalline polymer, properties such as the degree of crystallinity and the crystallisation kinetics may be enhanced near to a free surface. Grazing incidence x--ray diffraction (GIXD) is used to investigate such effects in poly(ethylene terphthalate) (PET), showing that a lower crystallisation temperature is obtained at the surface, and the crystallisation kinetics are faster at the surface for all temperatures. It is proposed that in thin films of PET, this surface-induced ordering provides nucleation sites for crystallisation in the bulk. GIXD is also used to investigate the ...

International Nuclear Information System (INIS)

The physicochemical forms and partitioning of corrosion products released from stainless steel upon exposure to selected environmental conditions is the subject of this investigation. This report describes the influence of calcareous sediment on the rate of release and fate of corrosion products produced when neutron-activated stainless steel specimens were exposed to a Globigerina ooze taken from the Northeast Pacific Ocean. The calcareous ooze used in this study consists largely of planktonic formanifera tests and was found to be about 90% CaCO_3. The trace metal content of this sediment was typical of average deep-sea carbonate sediments, and the ratios of trace elements to Ti were not remarkably different from a coastal clayey silt or a Northeast Pacific pelagic red clay. Most (>80%) of the trace metals extracted by sequential chemical treatment were associated with reductant-soluble materials, i.e., amorphous Mn and Fe oxides, or were incorporated in the ...

Energy Technology Data Exchange (ETDEWEB)

Ceria (CeO{sub 2})-modified PtRu/C catalysts with different compositions of Ru and CeO{sub 2}, viz. PtRu{sub 0.9}(CeO{sub 2}){sub 0.1}/C, PtRu{sub 0.7}(CeO{sub 2}){sub 0.3}/C and PtRu{sub 0.5}(CeO{sub 2}){sub 0.5}/C and unmodified PtRu/C catalyst were synthesized by the sodium borohydride reduction method. Transmission electron microscopic results indicated that the lower concentrated CeO{sub 2}-modified PtRu/C catalysts had almost a similar morphological structure (well-dispersed particles with size around 2.3-2.5nm) with that of the unmodified PtRu/C catalyst. X-ray diffraction and X-ray photoelectron spectroscopy analyses indicated the formation of PtRu alloy and presence of CeO{sub 2} in an amorphous form with a mixed oxidation states (Ce{sup 3+}-Ce{sup 4+}). Electro-catalytic activity of these catalysts for methanol oxidation was investigated by linear sweep voltammetry and chronoamperometry and it was found that the PtRu{sub 0.7}(CeO{sub 2}){sub 0.3}/C ...

Energy Technology Data Exchange (ETDEWEB)

A systematic study of structure-mechanical properties relation is reported for MoSi{sub 2}-SiC nanolayer composites. Alternating layers of MoSi{sub 2} and SiC were synthesized by DC magnetron and rf-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: Crystallization and phase transformation of MoSi{sub 2}, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11 GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi{sub 2} to form the C40 structure at 500C and SiC to form the a structure at 700C. The crystallization process is directly responsible for hardness and modulus increase ...

Energy Technology Data Exchange (ETDEWEB)

Samarium cobaltite ceramic perovskites, with and without platinum particles dispersion, are possible candidates as electrode for electrochemical conversion of hydrocarbon and for intermediate temperature solid oxide fuel cells (ITSOFC). In this work, samarium cobaltites were synthesized by the combustion method using cobalt, and samarium nitrates as cation precursors and urea as fuel. For containing-platinum compositions Pt (II) acetyl acetonate was also employed as precursor. The effect of Sr on the phase formation and its electrical behavior is also studied. Specific surface area (BET), SEM-EDX, TEM and XRD analysis are used to characterize the powders obtained. Powders were pressed into pellets and sintered in air in the temperature range of 1200 -1400 C. Electrical impedance spectroscopy studies (EIS) are performed on sintered samples. The as-prepared powders showed an amorphous structure and by TEM a very small particle size ({proportional_to}10 nm) was ...

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The Co-Si composites with a molar ratio of 2:1 are synthesized by ball-milling method and their potential as negative electrode materials of Ni-MH batteries is investigated. The microstructure, morphology and chemical state of the ball-milled Co-Si composites are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). XRD patterns show that the ball-milled samples for 10 and 20 h contain Co, Si and Co{sub 2}Si phases, and the ball-milled samples for 40 and 60 h are mainly amorphous Co{sub 2}Si alloys. In contrast to the high initial discharge capacity (1012 mAh/g) obtained for the sample ball-milled for 10 h, the discharge capacities of the samples ball-milled for 40 and 60 h are very low. It indicates that the hydrogen storage capacity of pure Co{sub 2}Si alloy is very low. It is found that the formation of active Co nanoparticles and Si oxidation are responsible for the high values of the ...

Science.gov (United States)

Mesporous anatase-phase TiO(2) hollow spheres with high photocatalytic activity were prepared by hydrothermal treatment and self-transformation of amorphous TiO(2) solid spheres in an NH(4)F aqueous solution. The prepared samples were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, N(2) adsorption-desorption isotherms and UV-vis absorption spectroscopy. The photocatalytic activity was evaluated by photocatalytic oxidation decomposition of acetone in air under UV irradiation. It is found that F(-) plays an essential role in the formation of TiO(2) hollow spheres. F(-) not only induces the hollowing of TiO(2) solid spheres, but also promotes the crystallization of anatase TiO(2) nanocrystals. A possible formation mechanism for the TiO(2) hollow spheres by localized Ostwald ripening or chemically induced self-transformation is proposed based on the experimental observations. Furthermore, the molar ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in small increments and the concentration of ...

Energy Technology Data Exchange (ETDEWEB)

Background: The difficulty of directly measuring cellular dose is a significant obstacle to application of target tissue dosimetry for nanoparticle and microparticle toxicity assessment. As a consequence, the target tissue paradigm for dosimetry and hazard assessment of nanoparticles has largely been ignored in favor of using metrics of exposure (e.g. ?g particle/mL culture medium, particle surface area/mL, particle number/mL). We have developed a computational model of solution particokinetics (sedimentation, diffusion) and dosimetry for non-interacting spherical particles and their agglomerates in monolayer cell culture systems. Particle transport to cells is calculated by simultaneous solution of Stokes Law (sedimentation) and the Stokes-Einstein equation (diffusion). Results: The In vitro Sedimentation, Diffusion and Dosimetry model (ISDD) was tested against measured transport rates or cellular doses for multiple sizes of polystyrene spheres (20-1100 nm), 35 nm ...

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy was shown by metal oxidation which led to metal atoms being ...

Energy Technology Data Exchange (ETDEWEB)

TiO{sub 2} is a vital material in several technologies including, photocatalysis, gas sensing, biomaterials and optical coatings. Among the several crystal structures of this oxide, rutile has the highest density and microhardness, the highest index of refraction and the highest temperature stability. The processing of dense polycrystalline materials often includes the addition of a liquid-forming phase at higher temperatures. This technique is known as liquid-phase sintering and has been studied extensively. Rutile boundaries containing an amorphous phase have been used to study boundary migration and grain-boundary grooving. Visible-light (VLM), scanning electron (SEM) and transmission electron microscopy (TEM) in addition to electron-backscatter diffraction (EBSD) and a focused-ion beam (FIB) tool were used to characterize boundary migration in rutile. EBSD analysis was carried out on a Philips XL30 FEG SEM equipped with a DigiView 1612 high-resolution, ...

International Nuclear Information System (INIS)

The aim of the present study is to identify and characterize the antimalrial agents from traitional Sudanese medicinal plants. 49 plants parts representing 26 species from 15 families were extracted and screened for their in vitro antimalrial activity using P. falciparum strain 3D7 which is chloroquine sensitive and Dd2 strain which is chloroquine resistant and pyrimethamine sensitive.The plant species investigated exhibited diverse botanical families. They includes Annonaceae, Aristolochiaceae, Asteraceae, Balantiaceae, Caesalpiniceae, Celasteraceae, Cucurbitaceae, Fabaceae, Graminae, Meliaceae, Myrtaceae, Polygonaceae, Rubiaceae, Rutaceae, and simaroubaceae. The evaluation of these plants for their antimalarial activity and their effect on lymphocyte proliferation was carried out. 57 extracts were tested on the chloroquine sensitive strain (3D7). Where 34 extracts (59%) exhibited significant activity against 3D7 with IC_5_0 values #100 #mu# g/ml), where as Sonochous cornatus, ...