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The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

British Library Electronic Table of Contents (United Kingdom)

Mesoporous films of platinized carbon nanotube-zirconia-Nafion composite have been used for the immobilization of tris(2,2prime-bipyridyl)ruthenium (II) (Ru(bpy)32+) on an electrode surface to yield a solid-state electrogenerated chemiluminescence (ECL) sensor. The composite films of Pt-CNT-zirconia-Nafion exhibit much larger pore diameter (3.55 nm) than that of Nafion (2.82 nm) and thus leading to much larger ECL response for tripropylamine (TPA) because of the fast diffusion of the analyte within the films. Due to the conducting and electrocatalytic features of CNTs and Pt nanoparticles, their incorporation into the zirconia-Nafion composite films resulted in the decreased electron transfer resistance within the films. The present ECL sensor based on the Pt-CNT-zirconia-Nafion gave a lin...

J-STORE (Japan)

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No abstract prepared.

Science.gov (United States)

Manufacture of cadmium sulfide thin film solar cells

KoreaScience (Korea)

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Science.gov (United States)

No abstract prepared.

J-STORE (Japan)

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KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

Science.gov (United States)

... After strip- ping off the chloroform, the dibromo ethyl (EDBEB) compounds are separated from the m-BDBEB using a thin film evaporator. ...

Science.gov (United States)

Thin film solar cells and solar cell testing - photovoltaic cells, radiation damage to cadmium sulfide solar cells, and airplane testing of solar cells

Science.gov (United States)

A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...

Science.gov (United States)

PMID:21671451

International Nuclear Information System (INIS)

(Jun 1978). United States Chino, K. Hitachi Research Lab., Japan Kikuchi,

Science.gov (United States)

... analyzer section for angle resolved measurements, and a thin film evaporator with a quartz crystal microbalance to measure the mass deposition. ...

International Nuclear Information System (INIS)

Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).

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Polyacrylonitrile films have been spin cast and pyrolyzed to produce thin (500--1500 A) carbon films. These films have higher electrical conductivities than films produced by other methods at similar temperatures. The conductivity can be varied by at least four orders of magnitude by changing the pyrolysis temperature. Ultraviolet, infrared, and Raman spectroscopies were used to investigate the chemical structure of the films during different stages of processing.

International Nuclear Information System (INIS)

Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical ...

International Nuclear Information System (INIS)

YBa_2Cu_3O_7_-_x thick films have been deposited on silver sheets and MgO single crystals by spray pyrolysis. Film texture is related to film thickness and sintering temperature. The X-ray intensity ratio of the 005 peak to the 110 peak is higher for thin films deposited at the higher temperatures. However, elevated temperatures promote copper diffusion and second-phase formation in films deposited on silver. Films deposited on MgO can have larger grain sizes and are more oriented than those deposited on silver.

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Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

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Short communication. 2 figs.

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Nanocrystalline MnO thin film has been prepared by a pulsed laser deposition (PLD) method. The reversible lithium storage capacity of the MnO thin film electrodes at 0.125C is over 472 mAh g{sup -1} (3484 mAh cm{sup -3}) and can be retained more than 90% after 25 cycles. At a rate of 6C, 55% value of the capacity at 0.125C rate can be obtained for both charge and discharge. As-prepared MnO thin film electrodes show the lowest values of overpotential for both charge and discharge among transition metal oxides. All these performances make MnO a promising high capacity anode material for Li-ion batteries. (author)

Science.gov (United States)

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

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Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

International Nuclear Information System (INIS)

The possibility to compress and to split laser pulses at their nonlinear optical transmission through semiconductor films was investigated

International Nuclear Information System (INIS)

The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

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The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

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The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, ...

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The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had ...

International Nuclear Information System (INIS)

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the ...

British Library Electronic Table of Contents (United Kingdom)

In this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34x10^-^1^3Scm^-^1. The height of the potential barrier was determined to be 1.65eV for this alternate layer LB film system.

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Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).

International Nuclear Information System (INIS)

The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)

UK PubMed Central (United Kingdom)

Zirconia-based restorations are widely used in prosthetic dentistry; however, their susceptibility to hydrothermal degradation remains elusive. We hypothesized that CAD/CAM machining and subsequent...Full Text Available

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A new thin film manufacturing method is established to add a function to glass material surface, as a new material technology which harmonizes with global environment, and is suitable for resource re-utilization and energy conservation. It is intended to develop a leading technology to promote recycling of colored glasses by applying this technical method to colored glasses. Fiscal 1998 has implemented subsequently to fiscal 1997 the following subjects in the three research items composed of a new manufacturing method of functional thin films, application of the functional thin films to colored glasses, and the comprehensive investigative studies: establishment of an industrial manufacturing method for color coating liquid and evaluation of basic characteristics of the colored functional thin films, optimization of ...

Energy Technology Data Exchange (ETDEWEB)

The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for ...

British Library Electronic Table of Contents (United Kingdom)

Dopant-free Bi2Ti2O7 thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV?Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La3+ ions can act as a stabilizer of Aurivillus phase BLT and a grain?growth inhibitor in BLT thin films.

International Nuclear Information System (INIS)

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

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Nb{sub 2}O{sub 5} thin films were formed on aluminum foils by a sol-gel process in order to increase the capacitance of the aluminum foils which are used as aluminum electrolytic capacitors. Investigations focussed on the preparation and characterization of the coating solution, the formation of Nb{sub 2}O{sub 5} thin films on aluminum foils, and the heat treatment and anodization of the films. The phase transition and electrical properties, such as capacitance, leakage current, and withstand voltage of the Nb{sub 2}O{sub 5} thin films were also measured. The Nb{sub 2}O{sub 5} thin films annealed at temperatures below 550 degree C were found to be amorphous, but they were crystallized to the orthorhombic phase by annealing at temperatures higher than 580 degree C. The capacitance of the coated ...

British Library Electronic Table of Contents (United Kingdom)

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.

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Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

International Nuclear Information System (INIS)

The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission ...

International Nuclear Information System (INIS)

Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation of oxygen in a thin Fe film during its irradiation with swift heavy ions. It is observed that the adsorbed oxygen diffuses in to the Fe film. The incorporation of oxygen and its diffusion in the bulk of the film is a manifestation of extremely large electronic energy deposition by the incident ions. It is shown that the experimentally observed high diffusivity of oxygen in Fe during irradiation is due to the existence of transient melt phase of Fe.

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence analysis was used for the determination of Cu, Y and Ba in very thin high-temperature superconducting films. The precision of the method is better than 3% for about 1 #mu#m thick films. The atomic emission ICP spectrometry was used to testify results of XRF analysis. An acceptable agreement of both methods was obtained. (author) 4 refs.; 2 tabs.

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

International Nuclear Information System (INIS)

Magnetic structures and magnetocrystalline anisotropy (MCA) of tetragonal phase Fe_3Pt with an L1_2 atomic ordering in bulk and thin film are investigated by means of the first-principles full-potential linearized augmented plane-wave method. The results obtained predict that the tetragonal phase, in which the tetragonal distortion with (c/a) = 0.95 makes an asymmetry of magnetic properties along the c-axis (out-of-plane) and a-axis (in-plane), has an out-of-plane MCA. In addition, from the thin film calculations, the presence of surface is found to strongly enhance the out-of-plane MCA.

International Nuclear Information System (INIS)

High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.

Energy Technology Data Exchange (ETDEWEB)

Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be ...

International Nuclear Information System (INIS)

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration ...

Energy Technology Data Exchange (ETDEWEB)

Ultra-thin, uniform, pinhole-free solid polymer electrolyte films having a fixed carboxylic ester group of approximately 1 {mu}m thickness were prepared by polymerization of methyl acrylate and tris(2-methoxyethoxy)vinylsilane in a glow discharge plasma. The carboxylic ester group of the plasma polymer were transformed to lithium carboxylate groups by treatment with lithium iodide. This process give a single lithium ion conductive film. These solid polymer electrolyte films showed ionic conductivities of the order of 10{sup -8} S cm{sup -1} (10{sup 4} {omega} cm{sup 2} resistance per unit area) at room temperature. (orig.).

International Nuclear Information System (INIS)

Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.

British Library Electronic Table of Contents (United Kingdom)

In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...

International Nuclear Information System (INIS)

In this paper, we present experimentally determined reflection factors of mirrors based on the depleted uranium and dependence of reflection factor on time of presence of samples on air.

British Library Electronic Table of Contents (United Kingdom)

Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

Science.gov (United States)

international vehicles, control centers, and ground support personnel. ... consists of thin membranes made from a polymer-based film and ..... (including airplanes and submarines), environmental monitoring, and control ...... sciences can use it to analyze the birth and death of stars, the formation of solar ...

International Nuclear Information System (INIS)

New physical objects, ispalators based on free soap films, exhibit persistent flows of the soap solution in open and closed volumes in air with additions of gases of the C_8F_1_8 type (p = 20 Torr) at temperature drops on the films of the order of tenths and hundredths of kelvin. The flows move continuously at a velocity of 5 - 20 cm s"-"1. It is found that the parts of an inclined ispalator film show anomalous behaviour upon heating: their weight increases and they move downward over the film, whereas the unheated parts of the film move upward. Continuous radial vortex flows accompanied by the formation and washing of the regions of a thin black film are observed on circular films in closed volumes upon their uniform external cooling by evaporating water for 5 - 10 hours. The rapid flows make film ...

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Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

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A liquid-fillet is formed in front of a rotor blade in the cylinder of a horizontal agitated thin-film evaporator. Its thickness varies due to the gravity while the blade revolves inside the cylinder. In the critical condition, the amplitude of the oscillation becomes infinite and the phase advances 180 degrees. Prior to the critical condition, the experimental data agrees fairly well with the predictions. Near the critical condition, the amplitutde increases and the phase advances 60 degrees. In other words, the transition to the critical condition occurs continuously. (6 figs, 1 ref)

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Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes therebetween. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them.

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In this study, WO{sub 3} thin films were grown on glass substrates using an aqueous solution containing tungstate (NH{sub 4}){sub 2}WO{sub 4} as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at T{sub s} = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical ...

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Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10{sup -5} S/cm at room temperature for the film annealed at 800 deg. C for 30 min.

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To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs ...

International Nuclear Information System (INIS)

Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low ...

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The bibliography contains citations concerning the structural properties of sputtered tantalum and tantalum compounds. The preparation of thin film capacitors and resistors is described. The electrical properties of the sputtered films are also included. The influence of the substrate on the properties of the coatings is considered, including adherence of the coating to the substrate, and the effects of impurities on coating integrity. (Contains 250 citations and includes a subject term index and title list.)

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Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of ...

International Nuclear Information System (INIS)

Various examples of applications of these two techniques are described. A part of them are related to the analysis of adsorbed layers formed during gaz-metal interactions. The others are concerned with the analysis of passive films formed during dry and wet corrosion. Problems related to the calibration of these techniques are discussed.

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We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

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Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm{sup -3} HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly enriched in ...

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Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The ...

UK PubMed Central (United Kingdom)

BackgroundThe successful use of zirconia ceramics in orthopedic surgery led to a demand for dental zirconium-based implant systems. Because of its excellent biomechanical characteristics,...Full Text Available

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The growth of thin Pd[sub 2]Si films on Si(111) surfaces is studied using [ital in] [ital situ] transmission electron microscope under ultrahigh vacuum conditions. No immediate reaction of deposited Pd with Si is observed at room temperature. At [similar to]200 [degree]C, uniform Pd[sub 2]Si films can be formed. The thin Pd[sub 2]Si films are found to grow into strained islands at elevated temperatures. Interfacial misfit dislocations associated with interfacial steps propagate across the strained islands, causing the islands to grow layer-by-layer at the interface. The strain fields associated with the misfit dislocations are believed to be responsible for this behavior.

British Library Electronic Table of Contents (United Kingdom)

We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm2V?1s?1, normalized transconductances of 0.78 Sm?1, and on/off current ratios of 106. Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabri...

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An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.

Science.gov (United States)

The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

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Thin films of La{sub 0.6}Ca{sub 0.4}CoO{sub 3} perovskite were deposited on nickel plates by thermal decomposition of the metal nitrates. The electrochemical activity of the films for oxygen evolution in KOH solutions (0.1-1 M) was investigated. The reaction order with respect to OH{sup -} ion was found to be around 0.7. The results correlate fairly well with a mechanism in which breaking of the intermediate metal-peroxide bond at the Co ion is the rate-determining step. (author) 4 figs., 4 refs.

Energy Technology Data Exchange (ETDEWEB)

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced from {approx}10{sup 6} before aging. ...

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Dopant-free Bi{sub 2}Ti{sub 2}O{sub 7} thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV-Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La{sup 3+} ions can act as a stabilizer of Aurivillus phase BLT and a grain-growth inhibitor in BLT thin films.

International Nuclear Information System (INIS)

Vertical thin film evaporators have been used to concentrate and dry solutions because their rotating swing blades prevent scale from being deposited on the heated surfaces. Powdering capacity of the vertical thin film evaporator was examined experimentally for drying applications of radioactive liquid waste generated from nuclear power plants. As a result, it was found that the powdering capacity increased with the blade rotation, changing significantly in the low ratational region and scarcely in the high rotational region. The powdering capacity in the high rotational region was restricted by the lack of heat flux which was theoretically evaluated for the concentrating process. As the critical factor in the low rotational region was not clear, a visual test apparatus was made to observe flow patterns in the evaporator, and a powdering model was obtained. This model showed that powdering process was ...

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are ...

British Library Electronic Table of Contents (United Kingdom)

The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...

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In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical ...

International Nuclear Information System (INIS)

Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 ...

International Nuclear Information System (INIS)

The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in ...

Energy Technology Data Exchange (ETDEWEB)

High-performance polysilicon thin-film transistors (TFT`s) are fabricated using an excimer laser to recrystallize the undoped channel and dope the source-drain regions. Using a technique the authors call grain engineering they are able to control grain microstructure using laser parameters. Resulting polysilicon films are obtained with average grain sizes of {approximately}4--9 {micro}m in sub-100 nm thick polysilicon films without substrate heating during the laser recrystallization process. Using a simple four-mask self-aligned aluminum top-gate structure, they fabricate TFT`s in these films. By combining the grain-engineered channel polysilicon regions with laser-doped source-drain regions, TFT`s are fabricated with electron mobilities up to 260 cm{sup 2}/Vs and on/off current ratios greater than 10{sup 7} To their knowledge, these devices represent the highest performance laser-processed TFT`s ...

CERN Document Server

A Langmuir film is a molecularly thin film on the surface of a fluid; we study the evolution of a Langmuir film with two co-existing fluid phases driven by an inter-phase line tension and damped by the viscous drag of the underlying subfluid. Experimentally, we study an 8CB Langmuir film via digitally-imaged Brewster Angle Microscopy (BAM) in a four-roll mill setup which applies a transient strain and images the response. When a compact domain is stretched by the imposed strain, it first assumes a bola shape with two tear-drop shaped reservoirs connected by a thin tether which then slowly relaxes to a circular domain which minimizes the interfacial energy of the system. We process the digital images of the experiment to extract the domain shapes. We then use one of these shapes as an initial condition for the numerical solution of a boundary-integral model of ...

International Nuclear Information System (INIS)

Complete text of publication follows. According to the new European regulations (Restrictions of Hazardous Substance Directive), there is an emerging demand for environmental friendly metal treatments instead on formerly used chromate conversion coating technique. The aim of the present investigations was to characterise and compare silicon containing protective thin layers on roughened galvanized steel surfaces (with average roughness of 0.7 microns), using FTIR microscopy and imaging techniques. The silicon containing coatings were produced either by Chemical Vapour Deposition (CVD) or by wet chemical treatment using liquid silane. FTIR techniques offer new possibilities in the characterisations and chemical mapping of differently coated thin films, besides SEM+EDS, AFM, nanoindentation, XPS measurements (P. Nemeth et al., Materials Science Forum, 589 (2008) 433-438). All measurements were carried out by a Varian FTS-7000 ...

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Fe{sub x}Zn{sub 1-x} alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K{beta}/K{alpha} x-ray intensity ratios of Zn and Fe in Fe{sub x}Zn{sub 1-x} thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi {sup 241}Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in Fe{sub x}Zn{sub 1-x} ...

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Corrosion characteristics of Al and Cu thin films have been studied in cyclic fog tests using tap water fog and fog created with 0.1% NaCl solution in tap water. Likewise, their corrosion features have been analyzed in continuous immersion testing in the laboratory in distilled water, tap water, in 0.1% NaCl and 3.5% NaCl solutions in distilled water. The corrosion potentials and the corrosion currents of these thin films change and reach steady state values after some time. However, steady state is not realized in 3.5% NaCl solutions. The corrosion current density data have been used to calculate lifetime of 1 {mu}m thick thin films of Al and Cu in the various tests, and assuming that the fog test data would hold under normal exposure conditions, life spans for these thin film sensor elements in actual exterior exposure ...

Science.gov (United States)

High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub ...

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A method for using in situ X-ray absorption near edge spectroscopy to determine the composition of passive, transpassive, and nonreducible thin oxide films is described. The method is demonstrated by determining the composition of the passive films formed in pH 4.5, 0.1 M acetate buffer, on 100 {angstrom} thick Fe-yCr alloys (y = 8.5, 15, 19, 23 atom %) at potentials: (1) low in the passive region ({minus}0.3 V vs. mercurous sulfate reference electrode, MSE); (2) high in the passive region; (3) in the transpassive region; and (4) in the cathodic region where the air-formed film is not fully reduced. The nonreducible film at {minus}1.2 V is entirely a Cr{sup 3+} oxide/hydroxide. This nonreducible film persists at anodic potentials. At {minus}0.3 V, the passive film on each alloy is significantly enriched in Cr. The film ...

Energy Technology Data Exchange (ETDEWEB)

The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the ...

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si ...

CERN Document Server

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. ...

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The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.

International Nuclear Information System (INIS)

Concentration profiles of passive films formed on electrolytically anodized niobium and niobium-base alloys are obtained by Auger Electron Spectroscopy with simultaneous ion beam etching. The alloys investigated include 5Zr-Nb, 3Zr-10Ti-Nb, 2.5Zr-2W-Nb, and 1Zr-5Mo-5V-Nb. Experiments demonstrate that AES is among the most fascinating techniques for solving various characterization problems related to the structure and composition of the thin films formed by anodization. Data presented supports evidence that combined anodic and cathodic movements take place during film growth. 11 figures.

International Nuclear Information System (INIS)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped ...

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The Raywell Process Plants unit, which reclaims a wide range of organic solvents, including chlorinated hydrocarbons, is based on thin film evaporation and distillation rather than steam distillation, thus reducing the risk of contamination by water. Henry Balfour and Co.'s Pfaudler Solvent Recovery System gives 96% or better solvent recovery and produces a near-solid waste suitable for landfill disposal; like the Raywell system, it uses a mechanically wiped thin-film evaporator. Midland Oil Refineries uses sa Raywell thin-film evaporator for recovery of waste lubricating oils rather than the conventional sulfuric acid/clay treatment, thus avoiding formation of sulfuric acid sludge waste. The Henry Balfour Bioenergy anaerobic digestion system gives yields of fuel gas with 65-75% methane as high as 0.8 cu m/kg BOD; it achieves 95-98% BOD removal with no pH control or nutrient addition because it ...

British Library Electronic Table of Contents (United Kingdom)

Herein, we report engineering of nanostructured p-CuIn3Se5/n-CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu^+, In^3^+ and Se^2^- ions in alkaline medium. The uniform deposition of heterojunction thin films is achieved by optimizing the pH, temperature and molarity of the reactant bath. The as-deposited thin-films were annealed at 200^oC in air for 1h and further characterized for structural, optical and electrical properties using UV-Vis spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Hall effect for type of conductivity, and I-V measurement to investigate the char...

Energy Technology Data Exchange (ETDEWEB)

Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from ...

Energy Technology Data Exchange (ETDEWEB)

Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output ...

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...

International Nuclear Information System (INIS)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).

British Library Electronic Table of Contents (United Kingdom)

We report the fabrication and characterization of glucose-tolerant Raney-platinum cathodes for oxygen reduction in potentially implantable glucose fuel. Fabricated by extraction of aluminum from 1mm thin platinum-aluminum bi-layers annealed at 300^oC, the novel cathodes show excellent resistance against hydrolytic and oxidative attack. This renders them superior over previous cathodes fabricated from hydrogel-bound catalyst particles. Annealing times of 60, 120, and 240min result in approximately 400-550nm thin porous films (roughness factors ~100-150), which contain platinum and aluminum in a ratio of ~9:1. Aluminum release during electrode operation can be expected to have no significant effect on physiological normal levels, which promises good biocompatibility. Annealing time has a dis...

Energy Technology Data Exchange (ETDEWEB)

The fundamental points to be considered in a waste treatment system for a country like Japan, where the final disposal method has not been decided and the wastes have to be stored in the power plants, are volume reduction of the wastes, safe storage of the wastes in the plant, and flexibility regarding the final disposal. A system has been developed that consists of a thin film evaporator for the direct solidification of the liquid waste, a pelletizer for producing hard pellets from the powdered wastes, a pellet storage unit, and a solidification unit for the final disposal. A pilot plant with waste treatment capacity of 200 kg/h was built in 1976 and has proved the system feasibility. This paper reports on pilot plant tests of the thin film evaporator and other components, tests on pellet deterioration during long term storage, and integrity tests on the final disposal of the pellet bitumen package.

International Nuclear Information System (INIS)

Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.

British Library Electronic Table of Contents (United Kingdom)

This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

CERN Document Server

Classic and recent results for gauge effects on the properties of the normal-to-superconducting phase transition in bulk and thin film superconductors are reviewed. Similar problems in the description of other natural systems (liquid crystals, quantum field theory, early universe) are also discussed. The relatively strong gauge effects on the fluctuations of the ordering field at low spatial dimensionality D and, in particular, in thin (quasi-2D) films are considered in details. A special attention is paid to the fluctuations of the gauge field. It is shown that the mechanism in which these gauge fluctuations affect on the order of the phase transition and other phase transition properties varies with the variation of the spatial dimensionality D. The problem for the experimental confirmation of the theoretical predictions about the order of the phase transitions in gauge systems is discussed.

International Nuclear Information System (INIS)

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 #mu#m. (author).

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

Energy Technology Data Exchange (ETDEWEB)

From optical point of view and due to the magnetic interaction of the cold neutrons with the unpaired electron shell, magnetic materials hae a neutron spin-dependent refractive index n[sup +] [spin up] and n[sup -] [spin down]. Magnetic media such as Fe, Co and Ni react like birefringent uniaxial crystals in ordinary optica. n[sup +] and n[sup -] are the equivalent of the ordinary and extraordinary refractive indices. The specular reflection of spin polarized neutrons which is due to the discontinuity of the magnetic induction at the surface of the ferromagnet is a sensitive probe of surface and interface magnetism. We shall first give the background of the art of polarized neutron optics. Secondly, some recent examples from surface and interface magnetism will be given to illustrate the power of this technique such as the magnetic coupling in thin films and multilayers and flux penetration in superconductors. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si-H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.

Energy Technology Data Exchange (ETDEWEB)

Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications.

International Nuclear Information System (INIS)

In this work, ?-SnS2 thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl4) and thiourea (SC(NH2)2) as precursors. The structural study shows that ?-SnS2 thin film prepared using optimal experimental conditions: substrate temperature Ts = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO2. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal conductivity was Kc = 0.85 W m-1 K-1 and the thermal ...

International Nuclear Information System (INIS)

Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and ...

Energy Technology Data Exchange (ETDEWEB)

A technique and a particular apparatus for an inductive measurement of critical currents as a function of temperature and magnetic field in thin-film superconductors are described. The technique has been found to be particularly useful for high-field A-15 compounds 2 to 3 ..mu..m thick. Samples with lower critical current densities would have to be correspondingly thicker to measure over the same broad range of temperature and field. The design of the apparatus is detailed showing that the film can be taken directly from the deposition chamber and mounted without electrical contacts so samples can be changed easily. The principles of operation are developed based on the Critical State Model. These principles are tested by measurements which verify that the measured value of critical curent is independent of the amplitudes and frequency of the small ac magnetic field which is added to a much larger quasistatic field. The inductive measurements ...

Energy Technology Data Exchange (ETDEWEB)

Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO{sub 2} and ferroelectric Pb(Zr{sub 0.3},Ti{sub 0.7})O{sub 3} (PZT) gate insulators. The organic devices using SiO{sub 2} and PZT films had the field-effect mobility of approximately 0.1 and 0.004 cm{sup 2}/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO{sub 2} and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state.

International Nuclear Information System (INIS)

In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. ...

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a ...

Energy Technology Data Exchange (ETDEWEB)

The lithium-polymer energy storage technology requires the production of thin films of huge surface. The BT-EdF-CEA consortium has studied the various manufacturing techniques of these films and their assembly. The process was chosen according to its productivity, low expensiveness, ecological impact and energy performances with capacities reaching 40 Ah. This paper explains: the objectives and specifications of the project, the advantage of the consortium and the role of the different partners, the results (coating, dry extrusion and battery element manufacturing techniques), and the electrochemical performances of the elements. (J.S.)

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

International Nuclear Information System (INIS)

In one of the first uses of high Tc superconductors in an end-use product, Lake Shore Cryotronics and a Swiss lab have developed a liquid nitrogen level sensor using a high Tc thin film. The probe is manufactured using a seamless stainless steel tube with an yttrium-based zirconium oxide flame-sprayed on the tube. A plasma-sprayed superconductor compound is deposited on top of that. The probe is coated with a sealant that protects the superconducting film from the atmosphere. This manufacturing method has yielded an extremely durable product. Unaffected by ice formation and related mechanical problems, the superconducting level sensor can be kept in the dewar for long periods of time.

Energy Technology Data Exchange (ETDEWEB)

Langmuir-Blodgett films have been made with 3-n-hexadecylpyrrole and 3-n-octadecylpyrrole monomers and copolymers with unsubstituted pyrrole made by chemical polymerization at the air-water interface on a subphase containing FeCl/sub 3/. Langmuir-Blodgett films consisting of mixtures of stearic acid and alkylsubstituted polythiophenes have also been made as bilayer films. The orientation of single and multilayer films on platinum substrates have been studied by Near Edge X-ray Absorption Fine Structure Spectroscopy which also gives information about charge transfer interactions between the aromatic groups and the metallic substrates. The alkylsubstituted pyrroles form highly ordered two-dimensional structures. FeCl/sub 3/ initiated copolymerization with unsubstituted pyrrole leads to a more disordered system. In the case of polythiophene-stearic acid bilayers, the stearic acid layers are highly ordered. ...

Energy Technology Data Exchange (ETDEWEB)

Lithium (Li) plating-stripping reaction properties at the lithium phosphorus oxynitride glass electrolyte (LiPON)/copper thin film (Cu) interface is improved by the insertion of nano-thickness platinum (Pt) layer at the interface. The LiPON films are formed on mirror-polished lithium-ion conductive solid electrolyte sheets, and current collector thin films of Li, Cu-Pt multi layer, and Cu are formed on the LiPON films. The plating-stripping reactions at the LiPON/current collector films interface are carried out by galvanostatic and potential sweep measurements. Galvanostatic measurements reveal that Pt layer insertion reduces the overvoltage of the reaction and improves its coulomb efficiency. Also, cyclic voltammetry measurement suggests formation of Li-Pt alloys at higher voltages than 0 V (vs. Li/Li{sup +}) during the lithium plating ...

International Nuclear Information System (INIS)

Ultrathin solid polymer electrolyte membranes containing sulfonic ester groups were prepared by polymerization of methyl benzenesulfonate and octamethylcyclotetrasiloxane in a glow discharge plasma. The sulfonic ester groups of the plasma polymer were transformed to lithium sulfonate groups by treatment with lithium iodide. Hybridization of this plasma polymer containing the lithium sulfonate groups with poly(ethylene oxide) (average Mw 300) resulted in the formation of a single lithium ion conductive film. The hybrid polymer electrolyte films were about 1 #mu#m thick, pinhole-free, adherent to various substrates, and showed ionic conductivities at 60 degrees C of the order of 10"- "6 S cm"- "1 (10"2 #OMEGA# cm"2 resistance per unit area of as-prepared solid polymer electrolyte). This material shows promise for electrochemical applications such as all solid-state lithium batteries, sensors, and electrochemical display devices.

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}

UK PubMed Central (United Kingdom)

After slow progress in the efforts to develop phase plates for electron microscopes, functional phase plate using thin carbon film has been reported recently. It permits collecting high-contrast images...Full Text Available

CERN Document Server

A qualitatively different manifestation of the Rayleigh instability is demonstrated, where, instead of the usual extended undulations and breakup of the liquid into many droplets, the instability is localized, leading to an isolated narrowing of the liquid filament. The localized instability, caused by a nonuniform curvature of the liquid domain, plays a key role in the evaporation of thin liquid films off solid surfaces.

Energy Technology Data Exchange (ETDEWEB)

The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

International Nuclear Information System (INIS)

This paper deals with preparation of PE clay nano composite specimen for transmission electron microscopy (TEM) and studying the difference between dispersion of clay in low density polyethylene using poly(hydrogen methyl siloxane) (PHMS) as coupling agent and untreated one. Argon ion milling is the conventional means by which film sections are thinned to electron transparency for TEM analysis, but this technique exhibits significant problems. In particular, selective thinning and imaging of sub-micrometer inclusions during sample milling are highly problematic. We have achieved successful results using the focused ion beam (FIB) lift-out technique, which utilizes a 30 kV Ga"+ ion beam to extract electron transparent specimens with nanometer scale precision. Using this procedure, we have prepared a number of thin film materials representing a range of structures and compositions for ...

International Nuclear Information System (INIS)

In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.

Energy Technology Data Exchange (ETDEWEB)

Nylon 6 and nylon 66 films have been treated with aqueous sulfonated aromatic compound (SAC) solutions at concentrations ranging from 0.005 to 1.0 wt%. SAC uptakes at different treatment concentrations were measured and found to follow a BET isotherm. The surface morphologies of nylon film samples, including the original and SAC-treated films, have been characterized by atomic force microscopy (AFM). For untreated nylon 6 and nylon 66 films, AFM images show a randomly distributed fibrillar surface structure. Characteristic widths of fibrils in the nylon 66 and 6 films were 150-225 and 75-150 nm, respectively. For SAC-treated nylon films, the AFM images revealed that the surfaces of the films became covered with nodule-like features having a diameter range of 25-60 nm. AFM analysis provides evidence that SAC treatment deposited a surface ...

UK PubMed Central (United Kingdom)

BackgroundTitanium and titanium alloys are widely used for fabrication of dental implants. Since the material composition and the surface topography of a biomaterial play a fundamental...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundOsseointegration is crucial for the long-term success of dental implants and depends on the tissue reaction at the tissue-implant interface. Mechanical properties and biocompatibility...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain ...

Energy Technology Data Exchange (ETDEWEB)

A method for detecting electrons emitted as secondary particles by photon incidence to a specimen, as well as a method of using the photons emitted by electron incidence as detecting particles are explained. Pd-Si(100)2{times}1 system is adopted for a case study of using photo-electron spectroscopy where synchrotron emitted light in soft X-ray region is used as the incident light. Pd atoms are deposited little by little on clean Si surface to investigate the electron structure of the surface, and the interface electron structure after bonded formation of Pd(thin film)-Si(substrate) is estimated. Radiation soft X-ray spectroscopy is employed to observe the real state of the bonded interface of Pd(thin film)-Si(substrate) prepared by depositing Pd film in a short period of time. In the case of radiation soft X-ray spectroscopy with electron beam excitation, bonded system of ...

CERN Document Server

Non-evaporable thin film getters of various compositions have been produced by sputtering. Among about 20 materials which have been studied, the lowest activation temperature (about 180 degree C) has been displayed by a Ti-Zr-V coating obtained from a cathode made of intertwisted elemental wires. In order to optimize the vacuum properties of this film various production parameters, including the substrate temperature during coating, have been varied. The films have been characterized by pumping speed measurement, secondary electron microscopy, and X-ray diffraction. It has been found that the substrate coating temperature affects significantly the activation temperature, the pumping speed and the gas surface capacity. The highest pumping speed values, obtained for substrate coating temperatures of 250 degree C and 300 degree C, are clearly correlated with the increased surface roughness and porosity of ...

Science.gov (United States)

A facile solution chemistry is demonstrated to fabricate high-quality polycrystalline strontium ruthenium oxide (SrRuO{sub 3}) thin film electrodes on silicon substrates suppressing the formation of undesired ruthenium oxide (RuO{sub 2}) for the deposition of dielectric and ferroelectric materials like lead lanthanum zirconate titanate (PLZT). The robust, highly crystalline SrRuO{sub 3} film fabrication process does not favor the formation of RuO{sub 2} because of molecular level modification of the precursors possessing analogous melting points, yielding homogeneous films. This chemistry is further understood and complemented by kinetic and thermodynamic analysis of the DTA data under nonisothermal conditions, with which the activation energies to form RuO{sub 2} and SrRuO{sub 3} were calculated to be 156 {+-} 17 and 96 {+-} 10 kJ/mol, respectively. The room-temperature resistivity of the SrRuO{sub 3} ...

Energy Technology Data Exchange (ETDEWEB)

As a result of health and safety issues surrounding the use of radioactive materials on coated optical components, there has been renewed interest in coating materials whose optical and mechanical properties approach those offered by their radioactive counterparts. Due to the radioactive nature of ThF{sub 4} and its widespread use in optical coatings, the coating industry is examining other low index and non-radioactive fluorides as possible alternatives. In this paper, the authors present the results of an experimental study on the optical and mechanical properties of thermally evaporated ThF{sub 4}, DyF{sub 3}, CeF{sub 3}, LiF, HfF{sub 4}, IRX, and IRB thin films, where the materials were deposited at different substrate temperatures. The objective is to examine this series of fluorides under comparable deposition conditions and with respect to such material properties as: n and k, film stress, and environmental ...

CERN Document Server

An in-plane uniaxial magnetic anisotropy has been observed in thin Co films normally deposited onto obliquely sputtered Ta and Pt underlayers. Associated with this anisotropy is an augmented easy axis coercivity. The in-plane easy axis is, in most cases, perpendicular to the incident deposition plane. Microstructural results indicate that grains are well connected along the magnetic easy axis but are separated by long continuous voids along the hard axis, which is ascribed to a geometric shadowing effect due to the oblique incidence deposition of the underlayer. Hence, the magnetic anisotropy mimics the film growth anisotropy. It is therefore believed that the observed magnetic properties are due to magnetostatic shape anisotropy effects. In-plane coercivity and anisotropy field are shown to increase with underlayer deposition angle, underlayer thickness and magnetic layer thickness. The choice of capping layer is also ...

Energy Technology Data Exchange (ETDEWEB)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide ...

International Nuclear Information System (INIS)

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as ...

Energy Technology Data Exchange (ETDEWEB)

Photoelectrochemical oxidation is a potentially interesting method for destroying toxic organic materials. We have studied the photoelectrocatalytic activity of TiO{sub 2} films made by thermal oxidation of titanium, low pressure chemical vapour deposition (LPCVD), and anodisation of titanium. Two model organic compounds have been investigated for photooxidation: methyl phosphonic acid (MPA) which is a nerve gas analogue and 4-chlorophenol (4-CP) which is a chlorinated aromatic compound considered a standard for the evaluation of the TiO{sub 2} / UV processes. In addition to photoelectrochemical characterisation the films have been characterised by profilometry, XRD, AFM, photocurrent spectroscopy and Raman microscopy. Correlations have been made between the physical properties of the thin films and their catalytic activities. The most catalytic sample of thermally oxidised titanium was prepared at 400 ...

Energy Technology Data Exchange (ETDEWEB)

This work covers three distinct aspects of deformation and fracture during indentations. In particular, we develop an approach to verification of nanoindentation induced film fracture in hard film/soft substrate systems; we examine the ability to perform these experiments in harsh environments; we investigate the methods by which the resulting deformation from indentation can be quantified and correlated to computational simulations, and we examine the onset of plasticity during indentation testing. First, nanoindentation was utilized to induce fracture of brittle thin oxide films on compliant substrates. During the indentation, a load is applied and the penetration depth is continuously measured. A sudden discontinuity, indicative of film fracture, was observed upon the loading portion of the load-depth curve. The mechanical properties of thermally grown oxide ...

International Nuclear Information System (INIS)

Complimentary spectroscopic, microscopic and electrochemical studies were performed to characterise the barrier properties as well as the interface structure of model iron substrates covered with thin plasma polymer films. Cathodic plasma polymers were deposited which show high barrier properties. The metal surface was pre-treated by a reducing or oxidising plasma. This allowed the adjustment of the oxidation state of the interface layer. The interface structure was characterised by means of X-ray photoelectron sputter profiles, infrared spectroscopy and the application of a Kelvin probe. The investigations show that the measured Voltapotential on the plasma polymer surface can be correlated with the oxidation state of the interface. Reducing plasmas lead to an almost oxide free surface. After deposition of the plasma polymer, this reduced state of the oxide is sensitive to re-oxidation of the interface by oxygen that diffuses through the ...

Energy Technology Data Exchange (ETDEWEB)

The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel ...

Energy Technology Data Exchange (ETDEWEB)

We describe a new method for the scabbling of concrete surfaces using a thin layer of explosive material sprayed onto the surfaces. We also developed a new explosive mixture that could be applied with commercial spray painting equipment. The first part of our record describes experiments that studied methods for the initiation of the sprayed explosive. We successfully initiated layers 0.36 mm thick using a commercial EBW detonator, a flying plate detonator, and by pellet impact. The second part of our report describes a survey of spray methods and tests with two commercial spray systems that we believe could be used for developing a robotic spray system.

Energy Technology Data Exchange (ETDEWEB)

We tried to apply a quartz crystal as a sensor by using the resonant frequency and the resistance properties of quartz crystals. Four kinds of fatty acids that have the same head groups were coated on the surfaces of the quartz crystals, and the shift of the resonant frequency and the resistance were observed based on the lengths of the tail groups. Myristic acid (C{sub 14}), palmitic acid (C{sub 16}), stearic acid (C{sub 18}), and arachidic acid (C{sub 20}) were deposited on the surfaces of quartz crystals by using the Langmuir-Blodgett (LB) method. As a result, the resonant frequency change was more sensitive to high molecular-weight fatty acids than to low molecular-weight ones. We also observed the effect of temperature on stearic acid LB films, and the response properties of quartz crystals coated with stearic-acid LB films to organic gases were investigated. As a result, the sensitivity of quartz crystals to organic gases was higher for ...

Energy Technology Data Exchange (ETDEWEB)

Chloride-induced pitting corrosion of stainless steel (Materials No. 1.4301 and 1.4571) was investigated with the aid of chronopotentiostatic tests. Oxide films upon the surface (temper colours), addition of inhibitors (sulphate and nitrate) and temperature were the testing variables. Two different critical pitting potentials have been found, which give information on the potential ranges for stable passivity, latent and stable pitting corrosion. The results only indicate a small effect of Mo content of the material and test temperature. The inhibitors (sulphate and nitrate) have a marked effect. Specimens with a clean surface produced by pickling are markedly more resistant against pitting corrosion than specimens with a yellow temper colour, whereas the difference in corrosion resistance between yellow and blue films is relatively small. The width of the critical potential range for pitting corrosion generally increases with increasing oxide ...

Energy Technology Data Exchange (ETDEWEB)

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the ...

Energy Technology Data Exchange (ETDEWEB)

Cathodic arc deposition is an established and industrially applied technique for the formation of nitrides (e.g. TiN); it can also be used for metal oxide thin film formation. A cathodic arc plasma source with the desired cathode material is operated in an oxygen atmosphere of appropriate pressure, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on accelerator components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized ...

International Nuclear Information System (INIS)

NiMnSb has attracted a great deal of interest as a spin injector/detector in spintronic devices because it has a Curie temperature of 728 K and is predicted to be half-metallic (100% spin polarized). NiMnSb has been reported to have greatly reduced surface polarization, and to lose its half metallicity above 80 K. Here we report the investigation of the surface polarisation and electronic structure of NiMnSb by measurement of the transport spin polarization using point contact Andreev reflection spectroscopy, and anomalous Hall effect in thin films on Si(0 0 1). A comparison to bulk properties is made.

Energy Technology Data Exchange (ETDEWEB)

Development of useful high-critical-temperature (high-{Tc}) superconductors requires synthesis of superconducting compounds; fabrication of wires, tapes, and films from these compounds; production of composite structures that incorporate stabilizers or insulators; and design and testing of efficient components. This report describes technical progress of research and development efforts aimed at producing superconducting components based on the Y-Ba-Cu, Bi-Sr-Ca-Cu, Bi-Pb-Sr-Ca-Cu, and Tl-Ba-Ca-Cu oxides systems. Topics discussed are synthesis and heat treatment of high-{Tc} superconductors, formation of monolithic and composite wires and tapes, superconductor/metal connectors, characterization of structures and superconducting and mechanical properties, and fabrication and properties of thin films. Collaborations with industry and academia are also documented. 10 figs.

CERN Document Server

The confining effect of a spherical substrate inducing anchoring (normal to the surface) of rod-like liquid crystal molecules contained in a thin film spread over it has been investigated with regard to possible changes in the nature of the isotropic-to-nematic phase transition as the sample is cooled. The focus of these Monte Carlo simulations is to study the competing effects of the homeotropic anchoring due to the surface inducing orientational ordering in the radial direction and the inherent uniaxial order promoted by the intermolecular interactions. By adopting entropic sampling procedure, we could investigate this transition with a high temperature precision, and we studied the effect of the surface anchoring strength on the phase diagram for a specifically chosen geometry. We find that there is a threshold anchoring strength of the surface below which uniaxial nematic phase results, and above which the isotropic fluid cools to a ...

Energy Technology Data Exchange (ETDEWEB)

This paper describes the experimental results of long-life solid lubricated ball bearings tested under high-vacuum of 10 exp -4 Pa, high-temperature of 300 C, and high-speed (9000 rpm) conditions. For full ball-type bearings, the thin soft metals, either Ag or Pb, which were coated on the races and balls, appeared to have good torque properties. However, the durability of such bearings was less than 300 hours. The transfer films from the lamellar solid MoS2 and metal composite retainers improved the torque and wear properties. For ceramic, i.e., silicon nitride, balls used with steel rings, wear occurred on the inner rings. All ceramic bearings with composite retainers showed improved torque and wear properties. 18 refs.

DEFF Research Database (Denmark)

Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

Energy Technology Data Exchange (ETDEWEB)

A process and apparatus for solidifying radioactive waste liquid containing dissolved and/or suspended solids is disclosed. The process includes chemically treating for pH adjustement and precipitation of solids, concentrating solids with a thin-film evaporator to provide liquid concentrate containing about 50% solids, and drying the concentrate with heated mixing apparatus. The heated mixing apparatus includes a heated wall and working means for shearing dried concentrate from internal surfaces and subdividing dry concentrate into dry, powdery particles. The working means includes a rotor and helical means for positively advancing the concentrate and resulting dry particles from inlet to outlet of the mixing apparatus. The dry particles may also be encapsulated in a matrix material. Entrained particles in the vapor stream from the evaporator and mixer are removed in an integral particle separator and the vapor is subsequently condensed and may be recycled upstream ...

International Nuclear Information System (INIS)

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

Energy Technology Data Exchange (ETDEWEB)

In the nuclear power stations of GDR the rough radioactive waste includes borat-containing evaporator bottoms and spent ion exchanger resins. For its final disposal in deep geological formations (rock salt mines) this waste has to be solidified. The experience of one year lasting operation of a steam heated thin-film evaporator (heating surface 2 m{sup 3}) for evaporator bottoms to be solidified with a solid content of 200-250 g/l are reported on. In short time such amount of water is abstracted from the rough waste that due to the borate content a hot high-viscous product passes from evaporator to waste drum and there solidifies like glass to monolith. The product quality depends on the adjustment of the flow-equilibrium in the evaporator. Boric acid is used as matrix for the radioactive residues. The residual water content of the solidified waste product was about 15-20%, the volume reduction was V{sub f}=5...6. In order to be sure to get a solidified product a ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail ...

Energy Technology Data Exchange (ETDEWEB)

The first equipment installed at KfK-HDB was a system with a thin-film evaporator. This was later replaced by two vapor compression evaporating units with forced circulation, for evaporation of liquid LAW, and a steam-heated natural circulation evaporator, for evaporation of liquid MAW. Nuclear activities of the Karlsruhe Nuclear Research Center phasing out, the liquid radwaste quantities to be treated have been shrinking accordingly, so that the current system is planned to be replaced by a smaller system with a thin-film evaporator. (orig./HP) [Deutsch] Im Laufe der Jahre wurde die Anlage mit Duennschichtverdampfer durch zwei Bruedenkompressionsverdampfer mit Zwangsumwaelzung fuer die Eindampfung leicht aktiver waessriger Abfaelle und einem dampfbeheizten Naturumlaufverdampfer fuer die Eindampfung mittelaktiver waessriger Abfaelle ersetzt. Mittlerweile sinkt der Abwasseranfall seit Jahren stetig aufgrund der sinkenden Aktivitaeten des ...

International Nuclear Information System (INIS)

The applicability of in situ, real-time RBS is demonstrated by characterizing the growth of thin Pd_2Si films on Si left angle 111 right angle substrates using isothermal as well as non-isothermal annealing. In contrast to the currently fashionable in situ ramped resistance technique, it is possible to extract the activation energy from a single run with a constant heating rate. The results, which are in excellent agreement with the literature, will be compared for isothermal annealing, fitting an appropriate model for the growth process to data from a single run and a Kissinger-like analysis with different ramp rates. In situ, real-time RBS was also used to study marker motion during CrSi_2 formation in the Si left angle 100 right angle /Pd_2Si/Cr system. It is possible to distinguish between the following mechanisms: (1) CrSi_2 formation via dissociation of the Pd_2Si at the Pd_2Si/Cr interface and subsequent reaction of Pd to form Pd_2Si at ...

Science.gov (United States)

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates. PMID:17595151

Energy Technology Data Exchange (ETDEWEB)

The present article describes the specialities in various chemical process equipment fabricated by Hitachi. It introduces the thin-film evaporator which heats, vaporizes and concentrates high viscosity fluid and slurry under thin-film conditions, the centrifugal extractor which uses a high speed rotating rotor to separate two kinds of immiscible liquids effectively in counter current contact conditions under a gravitational force ranging from 2,000G to 4,500G, the process gas boiler and heat pipe equipment which recovers exhausted heat effectively from various plants, the furnace and quench systems which are applied to olefin plants, EDC cracking and steam reforming, and the equipment which has been supplied to chemical plants operated under severe conditions, such as high temperature, high pressure and corrosive atmosphere. It was demonstrated that these technologies and know-hows accumulated from Hitachi's extensive experiences in ...

International Nuclear Information System (INIS)

Various volume-reduction methods are discussed and their capabilities evaluated. The following volume-reduction methods have the greatest potential at this time: forced-circulation evaporator/crystallizer; incinerator (conventional type); compactor; fluidized-bed calciner/incinerator; fluidized-bed dryer/incinerator; thin-film evaporator; extruder/evaporator; drum mixer; ribbon blender; inert-carrier evaporative process; molten-glass incinerator. The first eight system types listed above have been improved to the point of commercial viability.