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... Title : Effect of Yttrium on the Microstructure of Titanium Alloys,. ... The yttrium was added in the melting stage as an oxide or in the elemental form. ...

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Pore Fraction in Yttrium-Barium-Copper-Oxide and. Other Polycrystalline. Materials ...... Properties of Yttrium Ceramic. Sov. J. LowTemp.Phys. 14:395-402 . ...

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Results showed that a simple yttrium coating offered more potential for ... was from 70 to 150 K (125' to 200' F) above that for the yttrium coating. ...

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... Accession Number : ADD257320. Title : Sputter Deposition of Yttrium-Oxides. Descriptive Note : Journal article,. Corporate ...

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... Accession Number : ADA137272. Title : Effects of Yttrium Microalloying on the Epitaxial Grain Growth in Ti-6Al-4V Weld Fusion Zones. ...

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indications of the formation of palladium silicides. 2, 4. It has been reported .... At room temperature, palladium silicides formed in a relatively narrow interface ...

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PMID:21540757

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The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA.

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... chemical reactions high temperature lattice parameters microhardness

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A test to determine the lithium compatibility and impurity gettering capabilities of various materials including yttrium was performed in Beryllium-7 Experimental Lithium (7BELL) at 270/sup 0/C. Yttrium coupons were exposed in liquid lithium for a total of 3,718 hours. X-ray diffraction and bulk chemical analysis data indicated that yttrium absorbs hydrogen from liquid lithium at 270/sup 0/C and transforms to yttrium dihydride (YH/sub 2/). The transformation of yttrium to YH/sub 2/ resulted in embrittlement of the coupons and subsequent fragmentation to small pieces. Additional analysis, based on the equilibrium hydrogen pressures for the transition of yttrium to YH/sub 2/, and Sievert's relationship for hydrogen in equilibrium with hydrogen in lithium, indicates that the temperature of yttrium cannot exceed 280/sup 0/C to control ...

International Nuclear Information System (INIS)

The usage of biosorbents allows separation of scandium and yttrium from each other and from Fe, Al, Ti, Si, and Ca in hydrometallurgical processing of ores and wastes. It was shown that sorption of scandium and yttrium increased with the increase of pH of solution. Initial rate of scandium sorption depended on the biomass type; however 85-98% of scandium was sorbed within 10-30 min with most biomass types tested. The presence of aluminium, iron (III), and titanium in the solution inhibited sorption of scandium and particularly yttrium. After four cycles of sorption, 98.8% of scandium and 87% of yttrium was extracted from red mud leach solution by the biomass of Saccharomyces cerevisiae and Aspergillus terreus, respectively. Selectively of the process of scandium and yttrium recovery could be achieved during sorption and also desorption, when solubilization of sorbed associated ...

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... ADD137758. Title : The Oxidation Behavior of CoCrAlY, CoCrAl and Yttrium-Implanted CoCrAl Alloys Compared and Contrasted,. ...

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Carrier-free "8"8Y radioisotope, which has the longest half life (T=106.6 d) of yttrium radioisotopes and is a #gamma#-ray emitter, was obtained by proton irradiation of strontium, followed by cooling for one month. Then, "8"8Y was purified by precipitating strontium as strontium nitrate and extracting yttrium with tri-n-butyl phosphate (TBP). The decontamination factor of strontium to yttrium was more than 4x10"3 and chemically pure yttrium radioisotope was obtained. (author) 6 refs.

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This paper advances hypotheses on the chemistry of the interaction of thorium and yttrium with organic-inorganic salts of molybdenum polyacids. On the basis of an analysis of the data of an adsorption experiment and the quantitative relationships that follow from the law of mass action, it is shown that thorium is absorbed by the solid phase by coprecipitation with the participation of complex formation, while the coprecipitation of yttrium with salts of polyacids is due to a reaction of ion exchange chemisorption.

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Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

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A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

Science.gov (United States)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

Science.gov (United States)

We report significant enhancement in superconducting properties of yttrium substituted Ce1-xYxOFFeAs superconductors. The polycrystalline samples were prepared by two step solid state reaction technique. X-ray diffraction confirmed tetragonal ZrCuSiAs structure with decrease in both a and c lattice parameters on increasing yttrium substitution (with fixed F content). With smaller ion Y in place of Ce, the transition temperature increased by 6 K. Yttrium doping also lead to higher critical fields as well as broader magnetization loops, particularly at elevated temperature.

International Nuclear Information System (INIS)

The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in the opposite direction ...

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Portuguese 1986. p. 186. Brazil Achete, CA Rio de Janeiro Univ. (Brazil).

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The formation of palladium silicides near the interface may decrease hydrogen solubility at the effective metal/semiconductor ...

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Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

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Improvements in critical current capacity for superconducting film structures are disclosed and include the use of a superconducting RE-BCO layer including a mixture of rare earth metals, e.g., yttrium and europium, where the ratio of yttrium to europium in the RE-BCO layer ranges from about 3 to 1 to from about 1.5 to 1.

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

Science.gov (United States)

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra ...

International Nuclear Information System (INIS)

Low-porosity #alpha#- and #beta#-SiAlON composite material was prepared when the powder mixture intended for preparation of yttrium #alpha#-SiAlON, with the formula Y_0_._4Si_1_2_-_m_+_nAl_m_+_nO_nN_1_6_- _n, was attritor milled in isopropyl alcohol or contained excess oxygen (n > 0.6). The region of stability of single-phase yttrium #alpha#-SiAlON was smaller at lower temperatures. Wet milling (in isopropyl alcohol) of AlN powder was found to introduce excess oxygen into the milled powder.

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The objective of the project was to develop an infiltration material based on SiC that should have improved corrosion resistance and should permit higher operating temperatures. From a variety of tested doping agents, zirconium silicide and molybdenum proved to be the most appropriate agents. The respective infiltration materials permit a combination of advantages of the SSiC with those of the SiSiC. Silicide SiC, analogous to the SiSiC, is almost nonshrinking, and above all is more corrosion-resistant than SiSiC in the alkaline regime, due to the replacement of free silicon by silicide phases. The operating temperature of the molybdenum-base variant is 1600 C. (orig./CB) [Deutsch] Ziel des Vorhabens war die Entwicklung eines Infiltrationswerkstoffes auf SiC-Basis mit verbesserter Korrosionsbestaendigkeit und hoeherer Einsatztemperatur. Aus einer Vielzahl von getesteten Dotierungsmoeglichkeiten kristallisierten sich ...

International Nuclear Information System (INIS)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni_2Si, while Si is the diffusing species in CrSi_2. In Pd_2Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

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This paper addresses fuel cycle cost comparisons for a generic 10 MW reactor with HEU aluminide fuel and with LEU oxide and silicide fuels in several fuel element geometries. The intention of this study is to provide a consistent assessment of various design options from a cost point of view. Fuel cycle cost benefits could result if a number of reactors were to utilize fuel elements with the same number or different numbers of the same standard fuel plate. Data are presented to quantify these potential cost benefits. This analysis shows that there are a number of fuel element designs using LEU oxide or silicide fuels that have either the same or lower total fuel cycle costs than the HEU design. Use of these fuels with the uranium densities considered requires that they are successfully demonstrated and licensed.

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

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This study presents a rapid and selective method for the recovery of lanthanides and yttrium, existing in economically interesting concentrations, from red mud, the byproduct of the alumina production. The leaching process is based on the extraction of these elements with diluted nitric acid from red mud under moderate conditions and without using any preliminary treatment. Several parameters such as leaching agents, contact time, temperature, pressure and solid to liquid ratio were investigated in order to achieve an optimum recovery. The process followed here was selected taking into account its efficiency for the selective recovery of yttrium and lanthanides, but also its suitability for the subsequent liquid-liquid extraction of the leaching solution for the separation of the individual lanthanides. The achieved recovery percentages were for Y about 90%, for the investigated heavy lanthanides (Dy, Er, Yb) up to 70%, for the middle ones (Nd, ...

International Nuclear Information System (INIS)

Various compositions of Y(Ta,Nb)O4:Eu3+,Tb3+ with different Nb and activator concentrations have been investigated under UV and VUV excitation. Some compounds with very strong emission under VUV excitation were found. Such phosphors could be proposed as very good emissive materials for Displays and Lightings. The growing interest in luminescence spectroscopy of rare earth ions in the vacuum ultraviolet (VUV) and the visible (VIS) spectral range is due to industrial demands for new applications. YTaO4 and YNbO4 phosphors are a perspective class of efficient materials that are generally used in X-ray intensifying screens. These phosphors exhibit satisfying luminescence whenever excited by UV light, cathode radiation or X ray. However, to our knowledge, no work has been published on the VUV-excited luminescence for Eu3+ and Tb3+ double activated yttrium niobate and yttrium tantalate based phosphors. In this paper, the VUV-UV PL and PLE spectra of ...

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The color centers, which are generated in yttrium-aluminium perovskite (YAP):Nd(1 at.%) and YAP:Er(50 at.%) crystals under the influence of ultraviolet and #gamma#-irradiation, have been studied by absorption spectroscopy. The generated color centers are both stable and transient at room temperature. It is shown that the transient color centers are mainly responsible for the decrease of laser generation efficiency of Nd:YAP and YAP:Er irradiated crystals, although physical mechanisms leading to efficiency decrease are different in these materials. (orig.)

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Technologic regimes of cryomotor rotor fabrication are determined. Blanks of yttrium ceramics powder are molded hydrostatically at 400-600 MPa. To confirm the serviceability of electric machines of the considered, a hysteretic 10 W power electric motor with the following dimensions of HTSC-ceramics rotor: external diameter - 56 mm; internal diameter - 45 mm, height - 60 mm, is developed and tested in the liquid nitrogen medium. 8 refs.; 8 figs.; 1 tab.

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X-ray magnetic circular dichroism (XMCD) was used to probe the existence of induced magnetic moments in yttrium iron garnet (YIG) films in which yttrium is partly substituted with lanthanum, lutetium or bismuth. Spin polarization of the 4d states of yttrium and of the 5d states of lanthanum or lutetium was clearly demonstrated. Angular momentum resolved d-DOS of yttrium and lanthanun was shown to be split by the crystal field, the two resolved substructures having opposite magnetic polarization. The existence of a weak orbital moment involving the 6p states of bismuth was definitely established with the detection of a small XMCD signal at the Bi M{sub 1}-edge. Difference spectra also enhanced the visibility of subtle changes in the Fe K-edge XMCD spectra of YIG and {l_brace}Y, Bi{r_brace}IG films. Weak natural X-ray linear dichroism signatures were systematically observed with all iron garnet films and ...

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and palladium silicides (Pd,Si) with a total. AES intensity ratio of Pd to Si of 35/65. Scanning Electron Microscopy. (SEM') of the Pd region shows that ...

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The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

International Nuclear Information System (INIS)

Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation ...

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The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy was shown by metal ...

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The motivation of this work is to develop high reflectance normal-incidence multilayer mirrors in the 8-12 nm wavelength region for applications in astronomy and extreme ultraviolet lithography. To achieve this goal, Mo/Sr and Mo/Y multilayers were studied. These multilayers were deposited with a UHV magnetron sputtering system and their reflectances were measured with synchrotron radiation. High normal-incidence reflectances of 23% at 8.8 nm, 40.8% at 9.4 nm, and 48.3% at 10.5 nm were achieved. However, the reflectance of Mo/Sr multilayers decreased rapidly after exposure to air. Attempts to use thin layers of carbon to passivate the surface of Mo/Sr multilayers were unsuccessful. Experimental results on the refractive index {tilde n} = 1-{delta} + i{beta} of yttrium and molybdenum in the 50-1300 eV energy region are reported in this work. This is the first time ever that values on the refractive index of yttrium are measured in this energy ...

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The morphological development of oxide scales formed on a low Al substituted #beta#-sialon (z=0.2) oxidised for time periods up to 1024h at 1350 C is discussed in relation to oxidation kinetics. The oxidation process is observed to be accompanied by changes in both the phase assemblage of the external layers and their morphology. Thus as the time of oxidation increases beyond 64h the cristobalite-#beta#-yttrium disilicate phase assemblage changes to cristobalite plus #beta#- and #gamma#-yttrium disilicate. In addition to the changes observed for the surface layers, differences are observed in the morphologies of the polished cross-sections. These changes are consistent with an order of magnitude decrease in oxidation rate. (orig.).

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Thermophotovoltaic (TPV) converters were developed and tested at the heat source operating temperature of 1,700 K. Rare-earth-doped yttrium aluminum garnet (YAG) and lutetium yttrium aluminum garnet (Lu, YAG) selective emitters, as well as a blackbody emitter, were coupled to InGaAs/InP photovoltaic (PV) cells and bandpass/infrared (IR) reflector filters. YAG-based selective emitters were adopted with Ho, Tm, and Er. PV cells had bandgaps of 0.51, 0.57, and 0.69 eV. Converter energy conversion efficiencies approaching 30%, as well as electrical output power densities near 2 W/cm{sup 2} were demonstrated. The overall performance of the filtered blackbody-based converter was found to be superior to the selective emitter YAG-based converters. The details of the measurements performed on the above converters and their individual components are presented.

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The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to PdSi was also observed in the ...

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Two major modes of CO adsorption on SiO{sub 2}-supported Pd reflect different extents of back-donation, which is, at least in part, controlled by the local electron density at the adsorption site. The fraction of CO in the bridging mode (B) increases and that of the linear mode (L) decreases, with increasing size of the Pd particles, indicating high electron density at Pd atoms in terraces of close-packed crystal faces, in agreement with Smoluchowski's classical model. For samples reduced at 300{degree}C our data points and those of other authors are located on a common curve of B/L vs metal dispersion. Extensive reduction at 600{degree}C results in significantly lower B/L values, attributed to the incipient formation of a palladium silicide. Oxidation followed by reduction at 300{degree}C destroys the silicide, and the B/L value returns to the original curve.

British Library Electronic Table of Contents (United Kingdom)

Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...

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The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.

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By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.

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The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.

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Pd/sub 2/Si formation at the Pd-Si interface induced by irradiation with ions having a wide range of nuclear energy of deposition density has been investigated. It is found that the thickness of the silicide layer formed by irradiation is proportional to the ion fluence for irradiation with ions having low energy-deposition densities, while it is proportional to the square root of the fluence for irradiation with ions having energy-deposition densities. The results indicate that Pd/sub 2/Si formation is reaction limited when the energy-deposition density at the interface is low and is diffusion limited when it is high. The results are compared with the phenomenological theory developed by Horino et al. and it is shown that such a dependence of the limiting processes on the energy depositon density is induced when the diffusion is thermally activated while the reaction at the interface is radiation-enhanced.

International Nuclear Information System (INIS)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

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Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

International Nuclear Information System (INIS)

Y2Te4O11:Eu3+ and Y2Te5O13:Eu3+ single crystals in sub-millimeter scale were synthesized from the binary oxides (Y2O3, Eu2O3 and TeO2) using CsCl as fluxing agent. Crystallographic structures of the undoped yttrium oxotellurates(IV) Y2Te4O11 and Y2Te5O13 have been determined and refined from single-crystal X-ray diffraction data. In Y2Te4O11, a layered structure is present where the reticulated sheets consisting of edge-sharing [YO8]13- polyhedra are interconnected by the oxotellurate(IV) units, whereas in Y2Te5O13 only double chains of condensed yttrium-oxygen polyhedra with coordination numbers of 7 and 8 are left, now linked in two crystallographic directions by the oxotellurate(IV) entities. The Eu3+ luminescence spectra and the decay time from different energy levels of the doped compounds were investigated and all detected emission levels were identified. Luminescence properties of the Eu3+ cations have been interpreted in consideration ...

International Nuclear Information System (INIS)

To determine a suitable combination of X-ray filter and tube kilovoltage for Fuji Computed Radiography (FCR), provide better detection of pulmonary nodules, and reduce patient exposure, we compared observer performance with different X-ray filters and tube voltages. Radiographs were obtained with a copper filter backed by aluminium, with a tungsten filter backed by yttrium and aluminium, and with a lead filter backed by yttrium and aluminium, at both 100 kVp and 135 kVp. Observer performance in detecting simulated lung nodules, which were placed on the posterior aspect of a chest phantom, was compared using receiver operating characteristic (ROC) techniques for each combination of the X-ray filter and tube voltage. The results of the study indicated that 1) nodule detection was superior for the images obtained with 135 kVq as compared with 100 kVp; 2) approximately equal detection rates were obtained for the three X-ray filter sets, although ...

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X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 A. During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.

International Nuclear Information System (INIS)

Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.

International Nuclear Information System (INIS)

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum at the interface with decay on both sides. The density and the ...

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. A heat transfer model ...

Energy Technology Data Exchange (ETDEWEB)

The formation of textured YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (123) from a liquid phase according to the peritectic reaction Y{sub 2}BaCuO{sub 5} (211) + liquid {yields} 123 was analyzed using real-time analysis techniques of high-temperature X-ray diffraction, high-temperature optical microscopy, and environmental scanning electron microscopy (ESEM). Results were coupled with conventional ''post-mortem'' SEM analysis of processed samples at various stages of microstructural development. Observations of 123 formation and growth from the peritectic melt permit the conclusion that the presence of crystalline 211 primarily acts as a source of yttrium. The slow dissolution of 211 into the yttrium deficient liquid phase is the rate controlled step in the formation and growth of the textured 123, rather that its acting as a nucleation site for 123 grains as has been widely assumed. (orig.).

International Nuclear Information System (INIS)

Radioactive particles as well as x irradiation from an external source has been used in the treatment of rheumatoid arthritis, osteoarthritis, and ankylosing spondylitis. In order to clarify effects of ionizing irradiation on synovial cells, radioactive gold ("1"9"8Au) and yttrium ("9"0Y) were added to fibroblast cultures derived from human synovial membranes. Other cultures were irradiated by a Picker x-ray machine. Fibroblast growth and hyaluronic acid production were measured. Radioactive gold and yttrium particles induced a significant increase of hyaluronic acid synthesis rate (pg/cell/day) and inhibited fibroblast growth. Fibroblasts continued to overproduce hyaluronic acid and to show growth inhibition 3 weeks after irradiation with radioactive gold. Hydrocortisone inhibited hyaluronic acid overproduction induced by radioactive gold. Overproduction of hyaluronic acid induced by the x-ray machine was inhibited by hydrocortisone, ...

International Nuclear Information System (INIS)

There are two non-equivalent sites of yttrium in the lattice of Y_2SiO_5. Both of them may be occupied substitutionally by Er"3"+, resulting in a laser active material. We measured absorption spectra of Y_2SiO_5:Er"3"+ at several low temperatures and we studied its emission spectrum at 4.2 K following selective excitation of individual Stark components of the "4I_1_32/ to "4I_1_52/ transition by the light of a tunable colour centre laser. The results of these two experiments allow classification of the absorption and emission lines into two independent systems, thus yielding two energy level schemes 1 and 2. Moreover, simple crystal field calculations strongly suggest from which Y_2SiO_5 crystallographic site spectrum 1 arises, and from which one spectrum 2. (author)

Energy Technology Data Exchange (ETDEWEB)

Results are reported of photoemission studies using laser pulses of 10 ps duration and 4.66 eV photon energy on metal cathodes. These included thin wires, flat surfaces and an yttrium cathode with a grainy surface. The measurements of current density and quantum efficiency under low and high surface fields indicate that field assisted efficiencies exceeding 0.1% and current densities exceeding 10/sup 5/ A/cm/sup 2/ are obtainable. The results are compared to the requirements of switch power applications. 24 refs., 13 figs., 1 tab.

International Nuclear Information System (INIS)

Multi-cation #alpha#-Sialon ceramics were prepared using mixtures of samarium with calcium, magnesium, yttrium and ytterbium, and compared with a pure Sm-Sialon of equivalent total stabilising cation composition. A ratio of 80eq% samarium to 20eq% of the second stabilising additive was used. Samples were fired at 1820 deg C and subsequently heat treated at 1450 deg C. XRD phase analysis showed that all additives resulted in greater #alpha#-Sialon stability, and that calcium was the most effective additive for the stabilisation of the #alpha#-Sialon phase. Copyright (1998) Australasian Ceramic Society

International Nuclear Information System (INIS)

The description is presented of binary phase diagrams of titanium alloyed with the following elements: silver, aluminium, arsenic, gold, boron, barium, beryllium, bismuth, carbon, calcium, cadmium, cobalt, chromium, copper, iron, gallium, germanium, hydrogen, hafnium, indium, iridium, potassium, lithium, magnesium, manganese, molybdenum, nitrogen, sodium, niobium, nickel, oxygen, osmium, phosphorus, lead, palladium, platinum, plutonium, rhenium, lanthanium, cerium, preseodymium, neodymium, gadolinium, erbium, terbium, thulium, lutetium, rhodium, ruthenium, scandium, silicon, tin, strontium, tantalum, technetium, thorium, uranium, vanadium, tungsten, yttrium, ytterbium, zinc and zirconium.

Energy Technology Data Exchange (ETDEWEB)

The cathodic electrode process of Y(3+) ions on the Mo electrode in the LICl-KCl molten salt with YCl3(3wt%) in the temperature range of 450 - 530 deg. C has been investigated using cyclic voltammetry and chronopotentiometry. The convolution technique has been applied to the treatment of cyclic voltammogram. The results show that the reduction mechanism of Y(3+) ion is Y(3+) + 3e = Y, a simple one-step process. The cathodic process is very close to a reversible process under lower scanning rates, and is diffusion-controlled. The cathodic product is an insoluble product.

International Nuclear Information System (INIS)

This paper present the results of a series of calculations made to determine the "2"3"8Pu production potential of several advanced target assembly designs in the Fast Flux Test Facility (FFTF). These calculations show that by using advanced target designs the intimately mix the "2"3"7Np target material with an yttrium hydride moderator, the FFTF has the potential of producing up to 30 kg of high-quality "2"3"8Pu per year.

Energy Technology Data Exchange (ETDEWEB)

We labelled Lipiodol with yttrium-90 and analysed the biodistribution in rats after intrahepatic arterial injection. An RP-18 column was used to separate {sup 90}Y from strontium-90. {sup 90}Y was retained on the column, which had been pretreated with yttrium-selective extraction reagent, di(2-ethylhexyl) phosphate, while {sup 90}Sr was washed out. A hexadentate nitrogen-donor chelating ligand N,N,N`,N`-tetrakis(2-benzymidazolylmethyl)-1,2-ethanediamine (EDTB) was synthesized by condensation of 1,2-benzenediamine and ethylene diamine tetra-acetic acid (EDTA). Lipiodol was covalently conjugated with EDTB. The final product was obtained by eluting the retained {sup 90}Y from the RP-18 column with EDTB-Lipiodol. Sixteen male rats (Sprague-Dawley) were sacrificed at 1 h, 24 h, 48 h and 72 h (four rats at each time) after injection of approximately 0.1 mCi {sup 90}Y-Lipiodol via the hepatic artery. Samples of liver, spleen, muscle, lung, kidney, ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the ...

Energy Technology Data Exchange (ETDEWEB)

The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)

International Nuclear Information System (INIS)

We report de Haas--van Alphen measurements of the Fermi surface of lutetium at temperatures down to 0.3 K and in fields up to 150 kG in the (1010) and (1120) planes. Lutetium, having a filled 4f shell, serves as a nonmagnetic prototype of the structurally similar (hcp), trivalent, heavy rare-earth elements from Gd to Tm. The fact that no complete frequency branches were observed indicates that there are no closed pieces of the Fermi surface. We observed all but one orbit predicted by relativistic augmented-plane-wave calculations of Keeton and Loucks and by recent spin-orbit--linearized-augmented-plane-wave calculations of Tibbetts and Harmon. The data support a geometry similar to that of yttrium, and in good qualitative agreement with energy-band theory.

International Nuclear Information System (INIS)

By means of the light microscopy and by the measurement of the mechanical properties one investigated into the phase composition and the properties of Al-Mg-Ce and Al-Mg-Y system alloys. One plotted the isothermal cross sections of the mentioned systems under 430 and 275 deg C temperatures at up to 16% magnesium concentration and up to 0.7% yttrium concentration. One determined the yield limit and strength, the relative elongation of Al-Mg base hardened and deformed alloys containing 7.0-9.9% Mg and Ce, Y, Mn, Zr dopes upon ageing under 175, 200, 250 and 300 deg C temperatures within the ageing time ensuring the hardening maximum effect

International Nuclear Information System (INIS)

Summary of cyclotron production methods of "2"3"7Pu (45,2 d), "8"8Y (106,65 d) and "8"5Sr (64,84 d) tracers via nuclear reactions with protons and alphas on "2"3"5U, "8"8Sr and "8"5Rb targets in wide energy range is given. Chemical methods of separation and purification of the tracers from the irradiated uranium, strontium and rubidium targets are described. The tracers were used for determination of Pu (239-240), Sr-90 and Am-241 in the samples (soil, plants, underground waters) from Semipalatinsk Test Site. Obtained results are discussed.

International Nuclear Information System (INIS)

A study has been made of the colour reaction involved in the interaction or rare-earth elements with the reagent orthanyl K, the optimum conditions for the reaction being: pH=4.0-4.5 and lambda=660-670 nm. The ratio of components in the complex is Me:R=1:2. Consideration of the relative optical density values of the complex solutions as a function of the serial number of the rare-earth elements made it possible to recommend orthanyl K as a selective reagent for determining La, Ce, Pr and Nb in a mixture of Tu, Yb, Lu and Y oxides. The molar extinction coefficients, the sensitivity of the reaction and the concentration limits where Beer's law applies were calculated. Lanthanum was determined in a binary mixture with thulium and yttrium. (author).

British Library Electronic Table of Contents (United Kingdom)

Nanoscale yttrium?barium?copper oxide (Y2BaCuO5, Y211) particles were synthesized using the emulsion method and the solution method. The basic water-in-oil (w/o) emulsion system consisted of n-octane (continuous oil phase), cetyltrimethylammonium bromide (cationic surfactant), butanol (cosurfactant) and water. The composition of the emulsion system was varied and characterized by measuring the conductivity of the solutions and droplet size. The droplet size of emulsion was determined by using the dynamic light scattering method. The water content, cosurfactant content, and surfactant/n-octane ratio affected the droplet size which was in the range of 3?8?nm, and hence the w/o emulsion system was referred to as a nano-emulsion system. A model was used to verify the droplet size. The influenc...

International Nuclear Information System (INIS)

Reactively sputtered tantalum nitride (Ta_2N) has been investigated as a diffusion barrier between Pd_2Si and aluminum and CoSi_2 and Al. Ta_2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 "0C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd_2Si/Ta_2N/Al were excellent and showed no deterioration after annealing at 500 "0C. However, similar devices with CoSi_2 contacts and Ta_2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

Energy Technology Data Exchange (ETDEWEB)

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

International Nuclear Information System (INIS)

The solid solutions Eu(Ir_1_-_xPd_x)_2Si_2, which exist for 0#<=#x#<=#0.125 and 0.75#<=#x#<=#1, cristallize with the tetragonal ThCr_2Si_2-type structure. The variation of the europium valence with composition has been thoroughly studied at temperatures 4.2#<=#T#<=#293 K by "1"5"1Eu Moessbauer resonance. For 0#<=#x#<=#0.125 the europium valence at room temperature decreases as x increases. For 0.75#<=#x#<=#1 the valence transition temperature Eu"3"+#->#Eu"2"+ increases as x increases. (orig.).

International Nuclear Information System (INIS)

Interaction of Yb-Pd-Si system components is studied, isothermal cross section of this system state diagram at 870 K is constructed. Five new ternary silicides are detected in the system: YbPd_5Si_3, Yb_3Pd_2_0Si_6, YbPd_2Si, YbPd_0_,_6_7Si_1_,_3_3, YbPdSi; the existence of one more -YbPd_2Si_2, earlier known, is confirmed. Crystal structure for all the compounds detected is determined and examined. Data on the materials magnetic properties are obtained. It is assumed that YbPd_2Si, YbPd_2Si_2 and YbPdSi compounds appear to be the Condo-systems. 10 refs., 3 figs., 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

Science.gov (United States)

X-ray diffraction offers a unique combination of advantages for kinetic study which include the non-destructive nature of the measurement, the use of bulk crystals, and the convenience of the experimental arrangements. These attributes and the availability of position-sensitive detectors and high-flux synchrotron radiation sources make this technique most useful for in situ, dynamical investigations. When using diffraction techniques to determine a diffusion coefficient, the principle of analysis entails a scattering theory and a kinetic model. The former allows the kinetic parameter(s) to be extracted from measured intensity, while the latter relates the kinetic parameter(s) to the diffusion coefficient(s). Three examples are demonstrated: (1) Palladium Silicide (Pd{sub 2}Si) Layer Growth on Silicon, (2) Decomposition of an Ni-12.5at%Si Superalloy, and (3) Short-range Ordering in Cu-Au Solid Solutions.

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

Energy Technology Data Exchange (ETDEWEB)

Cold deformation of YBa{sub 2}Cu{sub 3}O{sub 7-x}(phase 123, T{sub c} = 88.5-92 K) powders and strips causes partial decomposition of the 123 phase, a reduction in the degree of orthorhombicity of the structure up to almost complete degradation, and a decrease in T{sub c}. When they are deformed, yttrium high temperature superconductors acquire basal (001) (110) texture with high pole density (13-15 arbitrary units), low scattering angle ({+-} 6deg--7deg from the normal direction), and a weak preference for a, b or a + b in the rolling direction; traces of (139) orientations may also be found. This texture is known to be favourable for increasing j{sub k}. The combined effect of cold deformation and a carbon-containing binder leads, however, to a complete loss of superconductivity at 77 K or above. Depending on the regime of subsequent annealing, the following effects may be observed: degradation of the orthorhombic structure with a decrease in T{sub c}; ...

Energy Technology Data Exchange (ETDEWEB)

The ternary zirconium palladium silicide ZrPd{sub 3}Si{sub 3} has been synthesized by arc-melting of the elemental components. It adopts a new structure type and crystallizes in the orthorhombic space group Cmcm with a = 3.8127(4){angstrom}, b = 15.551(1){angstrom}, c = 7.0390(5){angstrom}, and Z = 4 (Pearson symbol oC28). The structure can be regarded as being built up of Re{sub 3}B-type slabs of composition Pd{sub 3}Si alternating with {alpha}-FeSi{sub 2} slabs of composition ZrSi{sub 2}. Notable features include the presence of Si{sub 2} pairs, square pyramidal and tetrahedral coordination of Pd centers by Si atoms, an unusual distorted cubic coordination of the Zr atoms by the Si{sub 2} pairs, and an extensive network of Zr-Zr, Zr-Pd, and Pd-Pd metal-metal bonds. ZrPd{sub 3}Si{sub 3} is weakly metallic with a room-temperature resistivity of 1.7 x 10{sup {minus}3} {Omega} cm. Extended Hueckel band structure calculations confirm the metallic behavior; support the ...

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is determined by the ...

International Nuclear Information System (INIS)

Production of Fe_2O_3, Y_2O_3, YFeO_3, Y_3Fe_5O_1_2 powders using the alkoxomethod - during hydrolysis by yttrium and iron alcohol solutions, is studied. It is stated that production of the powders of Y_2O_3-Fe_2O_3 system oxides using alkoxomethod permits to decrease essentially the reaction volumes, number of operations, their duration as compared to the cooxidation of oxide hydrates from inorganic salt aqueous solutions. During heat treatment of iron (3) alcohol hydrolysis products #gamma#-Fe_2O_3 is first crystallized by contrast to #alpha#-FeOOH, usually produced by deposition from solutions. Further heat treatment of #gamma#-Fe_2O_3 results in production of #alpha#-Fe_2O_3. Conditions for crystallization of Y_3Fe_5O_1_2 and YFeO_3 phases, prepared by both methods, and their crystallite mean sizes are close, but the powders obtained from alcohols are more homogeneous.

International Nuclear Information System (INIS)

Uranium-aluminum alloys with a significant enrichment of uranium with "2"3"3U or "2"3"5U serve as nuclear fuels in research reactors. The quality assurance of this fuel requires, among other things, precise knowledge that all trace metal constituents that affect neutron economy, fuel integrity, and fuel fabrication process parameters are well within the specification limits. Trace metal characterization of "2"3"5U-Al alloy has been carried out by atomic spectrometry. The trace metal constituents of interest are grouped into common metals (silver, boron, calcium, cadmium, cobalt, chromium, copper, iron, magnesium, manganese, molybdenum, sodium, nickel, lead, silicon, tin, titanium, vanadium, tungsten, and zinc) and lanthanides (cerium, dysprosium, europium, gadolinium, holminium, lutetium, samarium, and terbium). The elements yttrium and zirconium are grouped with the latter in view of the chemical separation procedure used. The alloy samples are dissolved in 6 M ...

International Nuclear Information System (INIS)

In this study nanocrystalline powders of yttria-stabilized zirconia (ZrO_2-8Y_2O_3) have been synthesized through 'polymerized complex method'. Zirconium chloride, yttrium nitrate, citric acid and ethylene glycol were polymerized at 80 "oC to produce a gel-like mass in which metallic ions were uniformly distributed. During the thermal treatment of dried gel, nanocrystalline powder was formed at 450 "oC and 650 "oC for 2 h. Thermal reactions and crystalline phase formation of the dried gel were investigated through thermal analysis and X-ray diffraction analysis, respectively. The results of thermal analysis and XRD showed the formation of nanocrystalline powder at less than 600 "oC. Chemical bonding of the dried gel was investigated by Fourier transform infrared spectroscopy analysis. Morphology of powder calcined at 650 "oC was analyzed by scanning electron microscope. Yttria-stabilized zirconia powders with the mean crystallite size of 6 nm were prepared ...

Energy Technology Data Exchange (ETDEWEB)

In this paper the authors present the first emitter efficiency results for the thin film 40 percent Er-1.5 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) and 25 percent Ho YAG selective emitter at 1500 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns). Emitter efficiency and power density are significantly improved with the addition of multiple rare earth dopants. Predicted efficiency results are presented for an optimized (equal power density in the Er, (4)I[sub 15/2]-(4)I[sub 13/2] at 1.5 microns, and Ho, (5)I[sub 7]-(5)I[sub 8] at 2.0 micron emission bands) Er-Ho YAG thin film selective emitter.

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the silicon nitride to #alpha#-sialon transformation and resulted in a value of 330 ...

International Nuclear Information System (INIS)

We describe a panoramic stigmatic spectrograph comprising a grazing-incidence toroidal mirror and a large-aperture free-standing transmission diffraction grating (5000 lines mm-1 ). Two spectrograph versions were constructed, with grazing angles of 7.6 and 40 and the short-wavelength spectral limits near 4 and 1.5 nm. The spectrograph aberrations were studied by numerical ray tracing. The spectrograph was used to record line and quasi-continuous spectra (1.5 - 30 nm) of multiply charged ions in a plasma generated by the second-harmonic pulses of an yttrium aluminate laser (Q = 0.15 J, ? = 5 ns, ? = 0.54 ?m, repetition rate = 0.5 Hz). In combination with a laser-produced plasma radiation source, the arrangement was used to characterise soft x-ray optical components and to generate collimated beams of polarised radiation in the 14 - 20 nm range. (laser applications and other topics in quantum electronics)

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

International Nuclear Information System (INIS)

Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20 min at temperatures 600-800 deg. C) either from surface silicide (Pd_2Si, PtSi) or implanted layers. Results show that this procedure allows a strong localization of substitutional Pd and Pt at the depth where the damage produced by helium peaks. This results in local reduction of carrier lifetime by an almost ideal recombination centers - the acceptor level of substitutional Pd (E _c - 0.22 eV) or Pt (E _c - 0.23 eV). While optimum conditions for Pt in-diffusion are about 700 deg. C, Pd gives the best results already at lower temperatures (600 deg. C) where it also exhibits higher peak solubility. Both methods were used for optimization of turn-off properties of high power PiN diodes. The devices, where the lifetime was killed locally by Pd and Pt, exhibited similar trade-off between the static and dynamic parameters as the ...

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

International Nuclear Information System (INIS)

We present first-time measurements of the Fermi surface and low-energy electronic structure of intermetallic compounds Gd_2PdSi_3 and Tb_2PdSi_3 by means of angle-resolved photoelectron spectroscopy (ARPES). We show that the Fermi surface in both compounds consists of an electron barrel at the #GAMMA# point surrounded by spindle-shaped electron pockets originating from the same band, with the band bottom of both features lying at 0.5 eV below the Fermi level. From the experimentally measured band structure, we estimate the momentum-dependent RKKY coupling strength and demonstrate that it is peaked at the 1/2#GAMMA# K wave vector. Comparison with neutron diffraction data from the same crystals shows perfect agreement of this vector with the propagation vector of the low-temperature in-plane magnetic order, thereby demonstrating the decisive role of the Fermi surface geometry in explaining the complex magnetically ordered ground state of ternary rare earth silicides.

Energy Technology Data Exchange (ETDEWEB)

We have investigated CeTSi{sub 3} and CeTGe{sub 3} (T = Rh and Ir) by measuring the magnetic susceptibility, specific heat, electrical resistivity, the resonant inverse photoemission (RIPES) and M{sub IV,V} x-ray absorption spectra (XAS). The germanides showed a very weak Kondo effect, but the silicides exhibited a negatively large Weiss temperature (approx. = -130 K) and a lnT dependence of magnetic resistivity above 100 K, suggesting that they are a Kondo-lattice compound with a high Kondo temperature T{sub K} (approx. = 100 K). The Curie-Weiss law suggests that Ce atoms in these compounds remain close to 3+ down to about 150 K in spite of their high T{sub K}. In general, both RIPES and M{sub IV,V} XAS support their apparently stable valency. (author)

International Nuclear Information System (INIS)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of #tau#_8-Ce_3Pd_4Si_4 (U_3Ni_4Si_4-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), #tau#_1_6-Ce_2Pd_1_4Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for #tau#_1_8-CePd_1_-_xSi_x (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of #tau#_5-Ce_3PdSi_3 (Ba_3Al_2Ge_2-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and #tau#_1_3-Ce_3_-_xPd_2_0_+_xSi_6 (0#<=#x#<=#1, Co_2_0Al_3B_6-type, ...

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the major activities conducted in the Chemical and Energy Research Section of the Chemical Technology Division at Oak Ridge National Laboratory (ORNL) during the period October--December 1997. The section conducts basic and applied research and development in chemical engineering, applied chemistry, and bioprocessing, with an emphasis on energy-driven technologies and advanced chemical separations for nuclear and waste applications. The report describes the various tasks performed within six major areas of research: Hot Cell Operations, Process Chemistry and Thermodynamics, Separations and Materials Synthesis, Fluid Structure and Properties, Biotechnology Research, and Molecular Studies. The name of a technical contact is included with each task described, and readers are encouraged to contact these individuals if they need additional information. Activities conducted within the area of Hot Cell Operations included efforts to optimize the processing conditions ...

International Nuclear Information System (INIS)

Radioimmunotherapy (RIT) is a new treatment option for patients with non-Hodgkin lymphoma (NHL). Response to RIT currently remains difficult to predict using conventional prognostic factors and could be refined using functional imaging. The goal of this work is to evaluate the value of 18F-fluorodeoxyglucose (FDG) positron emission tomography (PET) in predicting response to Yttrium 90-labeled monoclonal antibodies for patients with NHL. Thirty-five patients with NHL who had undergone 18F-FDG PET prior to RIT with either 90Y-ibritumomab tiuxetan (group A; n=17) or 90Y-epratuzumab tetraxetan (group B; n=18) were included in this retrospective study. Four functional criteria were determined for each tumour lesion in a given patient: maximum and mean standard uptake values (SUVmax and SUVmean), functional lesion volume (LVol) and total lesion glycolysis (TLG, product of the volume and the SUVmean). For each patient, we determined highest SUVmax and SUVmean, cumulative ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of this memo is to give an update on our work on ceramic laser materials--feasibility proposal 04-FS-006. Transparent ceramic materials have several major advantages over single crystals in laser applications including, ease and robustness of manufacturing, large apertures, design flexibility, fracture toughness, high activator concentrations, uniformity of composition, no residual stress, and others discussed in the proposal. After a decade of working on making transparent YAG:Nd in 1995 Japanese workers demonstrated samples for the first time that performed as well in lasers as their single crystal counterparts. Since then several laser materials have been made and evaluated. For these reasons, developing ceramic laser materials is the most exciting and futuristic materials topic in today's major solid-state laser conferences. The highlights and executive summary of our work to date are: (1) Ordered a slab of transparent YAG:Nd from Konoshima Chemical Co. for ...

International Nuclear Information System (INIS)

Immobilization of long-lived fission products (LLFP) such as radioactive Tc, Cs and Sr into #alpha#-SiAlON ceramics was evaluated using stable isotopes instead of radioactive isotopes, and the applicability of #alpha#-SiAlON ceramics as the inert matrix for transmutation of LLFP was investigated. In the case of single addition of SrO, SrCO_3, Cs_2CO_3 or ReO_2 to the starting materials, #alpha#-SiAlON, single phase was not formed after hot-pressing. When Y_2O_3 was added with SrO, SrCO_3 or Cs_2CO_3 to the starting materials (#alpha#-Si_3N_4, AlN and #alpha#-Al_2O_3) in optimum compositions, #alpha#-SiAlON single phase was obtained after hot-pressing at 1700degC or 1800degC. From the EDS analysis, Sr and Y were detected from grains. It is suggested that Y would assist the expansion of interstices of #alpha#-SiAlON lattice, resulting in the incorporation of Sr"2"+ into #alpha#-SiAlON lattice. In the case of Cs addition with Y, Cs was not incorporated into interstices due to much larger ...

Energy Technology Data Exchange (ETDEWEB)

In the 14 MeV Neutron Laboratory, we have continued the development of a facility that is now the only one of its kind in operation in the United States. We have refined the klystron bunching system described in last year's report to the point that 1.2 nanosecond pulses have been directly measured. We have tested the pulse shape discrimination capability of our primary NE 213 neutron detector. We have converted the RF sweeper section of the beamline to a frequency of 1 MHz to replace the function of the high voltage pulser described in last year's report which proved to be difficult to maintain and unreliable in its operation. We have also overcome several other significant experimental difficulties, including a major problem with a vacuum leak in the main accelerator column. We have completed additional testing to prove the remainder of the generation and measurement systems, but overcoming some of these experimental difficulties has delayed the start of actual data ...

Energy Technology Data Exchange (ETDEWEB)

Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 {omega}/cm up to the annealing temperature as high as 850 deg. C ...

Science.gov (United States)

The title compounds were prepared by arc-melting of the elemental components. Whereas NdPdSi and SmPdSi are already present after the arc-melting, alpha-GdPdSi and alpha-TbPdSi are formed only during the annealing at 800 degC. The four compounds crystallize with the recently reported alpha-YbAuGe type structure, which was refined for alpha-GdPdSi: Pnma, a=2108.0(4) pm, b=433.9(1) pm, c=745.6(1) pm, Z=12, R=0.026 for 1447 structure factors and 62 variable parameters. The lanthanoid atoms are situated between two-dimensionally infinite nets of condensed, puckered hexagons formed by alternating palladium and silicon atoms, with Pd-Si distances varying between 251 and 262 pm. In the third dimension these nets are linked via weak Pd-Pd (300 pm), Pd-Si (283 pm), and Si-Si bonds (261 pm). The refinements of the occupancy parameters suggested that ca. 2% of the palladium sites are occupied by silicon atoms and vice versa. The structural relationships between the two modifications of GdPdSi and ...

Energy Technology Data Exchange (ETDEWEB)

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit remains nearly constant. This compressive stress effect was inhibited by hydrogen ...

Energy Technology Data Exchange (ETDEWEB)

The report describes the processing of TiSi{sub 2}, MoSi{sub 2} and Ti{sub 5}Si{sub 3} by means of metal injection molding (MIM). First, the sintering activities of the three materials were investigated. After this, the viscosities of different mixtures of organic binder and powders of the three materials were determined, and in the final stage, components were produced by injection molding, the binder was removed, and the components were sintered. TiSi{sub 2} in powder form could be sintered to more than 95% of its theoretical density after 4 h at 1386 C. Metallographic analyses proved leaktightness of the component at this density. In the case of Ti{sub 5}Si{sub 3}, it was found that this material requires very long sintering times and high sintering temperatures for sintering to about 94% of its theoretical density. Metallographic analyses showed that only about 90% of the theoretical density was reached. MoSi{sub 2} in powder form could be sintered to only 90% of its theoretical ...