Coyle, D.R., and J.W. Amrine, Jr. 2004. New collection records and host range of the cottonwood leafcurl mite, Tetra lobulifera (Keifer) (Acari: Eriophyidae), in the USA. Internat. J. Acarol. 30(1):3-8. The cottonwood leafcurl mite, Aculops lobuliferus Keifer, 1961, is renamed as Tetra lobulifera (Keifer). This eriophyid mite is capable of inflicting substantial damage on plantation- and native-grown cottonwoods (Populus spp.). We report new State and County collection records from the eastern and northwestern U.S.A. as well as new host records, including Populus grandidentata Michx. (big-tooth aspen), for this pest. This updates the established geographic range of T. lobulzjera, and demonstrates its ability to utilize other host plants in the genus Populus for development.
This experiment was undertaken to screen the acaricidal effects of herb essential oils (pennyroyal, ylang ylang, citronella, lemon grass, tea tree, and rosemary) at different doses (0.1, 0.05, 0.025,...Full Text Available
Varroa destructor is an ectoparasitic mite that affects colonies of honey bee Apis mellifera worldwide. In the last years, substances of botanical origin have emerged as natural alternative acaricides to diminish the population levels of the mite. In the present work, the bioactivity of propolis from different geographical locations of Pampean region from Argentina on V. destructor was evaluated. Fourteen propolis samples were organoleptic and physicochemically characterized and, by means topical applications, their activity was tested on mites. All propolis had a homogeneous composition and the bioactivity levels against mites were comparable among the different propolis samples. The percentage of mites killed by the treatments ranged between 60.5% and 90% after 30?s of exposure. Thus, V....
This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current ...