Texture of YBa_2Cu_3O_7_-_x superconductor thick films
International Nuclear Information System (INIS)
YBa_2Cu_3O_7_-_x thick films have been deposited on silver sheets and MgO single crystals by spray pyrolysis. Film texture is related to film thickness and sintering temperature. The X-ray intensity ratio of the 005 peak to the 110 peak is higher for thin films deposited at the higher temperatures. However, elevated temperatures promote copper diffusion and second-phase formation in films deposited on silver. Films deposited on MgO can have larger grain sizes and are more oriented than those deposited on silver.
1991-05-02
Analysis of superconducting oxide by 7 MeV alpha particle backscattering analysis
International Nuclear Information System (INIS)
High energy ion backscattering analysis in combination with recently-developed resonance scattering analysis is described, with a stress on precise and quantitative oxygen analysis and its successful application to the characterization and quality estimation of high T_c oxide superconductors. Particularly, the present status of high energy ion backscattering analysis, the review of analytical results for YBa_2Cu_3O_7 _- _x, the estimation of composition and crystalline quality of (La_1 _- _xSr_x)_2CuO_4 by 7 MeV alpha particle backscattering analysis are described.
1989-04-24
International Nuclear Information System (INIS)
Model construction of the laboratory scale superconducting fault current limiter circuit (SFCL) has been performed. The SFCL is fault current limiter and used as electric network security. It mainly consists of a copper coil, a superconducting ring and an iron core that are concentrically arranged. The SFCL circuit is essentially a transformer where the secondary windings are being replaced by the ring of YBa_2Cu_3O_7_-_x superconductor (HTS). The ring has critical transition temperature Tc = 92 K and critical current Ic = 3.61 A. Characterization of the SFCL circuit is simulated by ANSYS version 5.4 software. The SFCL circuit consists of load and transformer impedances. The results show that the inductions of magnet field flux in the iron core of primer windings and ring disappear to one other before fault state. It means that impedance of ...
2004-06-01
International Nuclear Information System (INIS)
Buffer layers with 100% lattice match with YBa2Cu3O7 - ? (YBCO) were prepared from mixed rare-earth-oxides applying a simple sol-gel process and dip-coating method. Structural analysis of the sol-gel derived powder by X-ray diffraction revealed that the mixing parameter, which eliminates the lattice mismatch with YBCO, is x = 0.2382, 0.1852, 0.1252, 0.0906, 0.0793 and 0.0395 in (Eu1 - xHox)2O3, (Eu1 - xErx)2O3, (Eu1 - xYbx)2O3, (Gd1 - xHox)2O3, (Gd1 - xYx)2O3 and (Gd1 - xYbx)2O3, respectively. Microstructural investigations were carried out for Gd1.819Ho0.181O3 films epitaxially grown on cube-textured Ni (100) substrates by sol-gel dip-coating process. X-ray diffraction of the buffer showed strong out-of-plane orientation on Ni tape. The (Gd1 - xHox)2O3 (222) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alne alignments. The full-width at half-maximum values of omega and phi scan of (Gd1 - xHox)2O3 films ...
2010-04-02
THE INFLUENCE OF GRAIN BOUNDARY CARBIDE ...
... Title : THE INFLUENCE OF GRAIN BOUNDARY CARBIDE DENSITY ON THE BRITTLE FRACTURE OF FERRITE PEARLITE STEELS. ...
Effect of intermetallic growth rate on spontaneous whisker growth from a tin coating on copper
British Library Electronic Table of Contents (United Kingdom)
Intermetallic compound (IMC) growth at the interface between a Sn coating and a Cu substrate with or without a Ni underlayer and its related stress state was evaluated by real-time measurements using the flexure beam method. For the Sn coating without a Ni underlayer, pyramid-shaped IMC grains of Cu6Sn5 grew along the grain boundaries of Sn from the Cu substrate, especially at the triple grain boundary junctions and the IMC grains rapidly increased their volume during the initial 3?days, During this time, the IMC growth rate was 2.3??m3/day and the compressive stress in the Sn coating rapidly developed and became saturated at about ?11?MPa. In contrast, platelet IMC grains of Ni3Sn4 formed at the surface of the Ni underlayer and the IMCs grew at a rate of 1.0??m3/day for the Sn/Ni coating....
2011-01-01
Grain boundaries structure and mechanical properties of aluminium alloys
Energy Technology Data Exchange (ETDEWEB)
The paper discusses the problem of influence of grain boundaries structure on mechanical properties of aluminium alloys at elevated temperatures. Showed the data amount of grain boundaries close to special and a random of grain boundaries. The results of calculation of contribution of different mechanisms of deformation to the total deformation for alloys with different types of grain boundaries are given. (orig.)
1996-08-01
Aluminum-containing intergranular phases in hot-pressed silicon carbide
Energy Technology Data Exchange (ETDEWEB)
Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a ...
2003-01-12
Grain boundary self-diffusion of alloy 800 as affected by sulphur, phosphorous and carbon
Energy Technology Data Exchange (ETDEWEB)
Using a radioactive tracer method the bulk and grain boundary diffusion of {sup 59}Fe was determined in industrial alloy 800 and melts of alloy 800 with additional P and S in the temperature range 800 to 1000 C. The use of the approximation of Suzuoka was confirmed by autoradiographs. In alloy 800 H the activation energy of grain boundary diffusion of {sup 59}Fe is (209 {+-} 17)kJ/mol. Dissolved elements especially P increase the activation energy of the grain boundary diffusion of Fe by their segregation to the grain boundaries. In addition the influence of the grain boundary diffusion on the growth of creep cavities was investigated in the same materials, and the chemical composition of the creep cavities and grain boundaries were ...
1999-08-01
Grain boundary self-diffusion of alloy 800 as affected by sulphur, phosphorous and carbon
International Nuclear Information System (INIS)
Using a radioactive tracer method the bulk and grain boundary diffusion of "5"9Fe was determined in industrial alloy 800 and melts of alloy 800 with additional P and S in the temperature range 800 to 1000 C. The use of the approximation of Suzuoka was confirmed by autoradiographs. In alloy 800 H the activation energy of grain boundary diffusion of "5"9Fe is (209 #+-# 17)kJ/mol. Dissolved elements especially P increase the activation energy of the grain boundary diffusion of Fe by their segregation to the grain boundaries. In addition the influence of the grain boundary diffusion on the growth of creep cavities was investigated in the same materials, and the chemical composition of the creep cavities and grain boundaries were analysed by ...
1998-07-06
All focused ion beam fabricated MgB_2 inter-grain nanobridge dc SQUIDs
International Nuclear Information System (INIS)
We have fabricated MgB_2 dc SQUIDs (superconducting quantum interference devices) containing inter-grain nanobridges as Josephson elements by a focused ion beam (FIB) etching method and measured their transport properties. The entire structure including the SQUID loop was patterned only using a FIB. The beam energy was 30 kV and the current was 0.9 nA for larger structures and 34 and 1.5 pA for the nanobridge pattern. Each bridge with a nominal width of 100 nm crossed a single grain boundary in the normal direction. The SQUID loop had a 3.1 #mu#m x 3.1 #mu#m hole with a 2 #mu#m average linewidth, corresponding to an inductance of 5.1 pH. The nanobridges had a two-step transition with an increase in the resistivity of more than a decade and a substantial decrease in the critical current density. Current-voltage characteristics showed a resistively shunted junction behavior at all temperatures below T_c, which implies that ...
2009-06-01
Hall mobility minimum of temperature dependence in polycrystalline silicon
Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.
1998-01-01
Energy Technology Data Exchange (ETDEWEB)
Evaluation of grain boundary composition and structure in superplastically deformed AA5083-based alloys (Al-4.5Mg-1.6Mn-0.2Zr) was carried out in a field-emission gun transmission electron microscope (FEG-TEM). During superplastic deformation at high homologous temperatures materials undergo extensive grain boundary sliding (GBS) which creates a flow of defects in the near-boundary region. Recent literature has shown that the grain-boundary composition in Al-Mg alloys is not necessarily the same as the matrix, and that these differences can have an effect on GBS.
1996-12-31
Energy Technology Data Exchange (ETDEWEB)
Plutonium oxide fuel pellets for powering radioisotopic thermoelectric generators for NASA space vehicles are encapsulated in iridium which has been grain-boundary-stabilized with thorium and aluminum. After aging for 6 months at 1310/sup 0/C under vacuum, enhanced grain growth is observed in the near-surface grains of the iridium next to the PuO/sub 2/. Examination of the grain boundaries by AES and SIMS shows a depletion of thorium and aluminum. Iron, chromium, and nickel from the fuel were found to diffuse into the iridium along the grain boundaries. Enhanced grain growth appears to result from thorium depletion in the grain boundaries of the near-surface grains next to the fuel. However, in one instance grain growth was slowed by the formation of thorium oxide by oxygen diffusing up the grain ...
1984-01-01
The progress made during the first two years of a program to study the migration of grain boundaries in ceramic oxides is reported. The principal results of the program are concerned with the structure of grain boundaries in ..cap alpha..-Al/sub 2/O/sub 3/, although important new information has also been obtained on grain boundaries in spinels and both germanlum and silicon. Attention is focused on the basal twin boundary in ..cap alpha..-Al/sub 2/O/sub 3/ which had been identified as a model interface in early work. A series of new grain boundaries exemplified by the (11anti23) twin are also discussed briefly as is the rhombohedral twin interface. Earlier results on the first-order (..sigma..=3) twin in spinel have been extended with the development of models for the computer-simulation of high-resolution TEM images of ...
1985-08-31
International Nuclear Information System (INIS)
The grain boundary misorientation distribution of 203 grain boundaries in bulk processed high Tc superconductor YBa_2Cu_3O_7_-_#delta# with five processing conditions;, was studied. Two complementary analytical approaches, Grain Boundary Misorientation Distribution (GBMD) from the random description, using a hypothesis test and #chi#"2 analysis, and Grain Boundary Character Distribution (GBCD), using the Coincidence Site Lattice (CSL) model, were applied. The GBMD and GBCD both showed grain boundary evolution departing from a random distribution above 935 C processing temperature. The GBCD analyses indicated an approximately linear increase in the population of CSL-related boundaries, among which the tetragonal CSL (c/a #not =# 3) boundaries grew in the same trend while ...
1997-04-04
International Nuclear Information System (INIS)
... Sergio Department of Materials, University of Oxford, Oxford (United Kingdom)
2008-05-01
Nanocrystalline materials: Interfaces and mesoscopic correlations studied by neutron scattering
International Nuclear Information System (INIS)
Nanocrystalline materials can exhibit properties which are considerably different from their coarse-grained counterparts, making them unique for basic or applied research and also very promising for potential applications. The topics which are addressed in the present paper are magnetic properties and magnetic correlations on the nanometer scale, mechanical properties, in particular the influence of grain boundaries on the elastic and plastic behaviour, and vibration models of grain boundary atoms in nanostructured materials. (author)
2001-09-23
Grain boundary corrosion of copper canister material
Energy Technology Data Exchange (ETDEWEB)
The proposed design for a final repository for spent fuel and other long-lived residues in Sweden is based on the multi-barrier principle. The waste will be encapsulated in sealed cylindrical canisters, which will then be placed in granite bedrock and surrounded by compacted bentonite clay. The canister design is based on a thick cast inner container fitted inside a corrosion-resistant copper canister. During fabrication of the outer copper canisters there will be some unavoidable grain growth in the welded areas. As grains grow they will tend to concentrate impurities within the copper at the new grain boundaries. The work described in this report was undertaken to determine whether there is any possibility of enhanced corrosion at grain boundaries within the copper canister. The potential for grain boundary corrosion was investigated by exposing copper ...
2001-03-01
Energy Technology Data Exchange (ETDEWEB)
Alloy 800 is an austenitic Fe-Ni-Cr steel containing relatively minor but important amounts of carbon, aluminium and titanium. Special grades of alloy 800 known as 800H, 800HT and 800LC differ in the concentrations of these elements. In addition to these industrial specifications, further melts were prepared containing phosphorous or sulphur. Using a radioactive tracer method the bulk and grain-boundary diffusion of {sup 59}Fe was investigated in these alloys in the temperature range 800 to 1000 C. For evaluation of the diffusion profiles the approximation of Suzuoka was used, which considers the depletion of the tracer on the surface. By autoradiography it was confirmed that such depletion occurs. In alloy 800H the activation energy of grain-boundary diffusion of {sup 59}Fe was found to be (209{+-}17) kJ/mol; dissolved elements, especially phosphorous, increase the activation energy. The same materials - aged at 800 C for 100 h - were used for ...
1999-10-01
International Nuclear Information System (INIS)
Alloy 800 is an austenitic Fe-Ni-Cr steel containing relatively minor but important amounts of carbon, aluminium and titanium. Special grades of alloy 800 known as 800H, 800HT and 800LC differ in the concentrations of these elements. In addition to these industrial specifications, further melts were prepared containing phosphorous or sulphur. Using a radioactive tracer method the bulk and grain-boundary diffusion of "5"9Fe was investigated in these alloys in the temperature range 800 to 1000 C. For evaluation of the diffusion profiles the approximation of Suzuoka was used, which considers the depletion of the tracer on the surface. By autoradiography it was confirmed that such depletion occurs. In alloy 800H the activation energy of grain-boundary diffusion of "5"9Fe was found to be (209#+-#17) kJ/mol; dissolved elements, especially phosphorous, increase the activation energy. The same materials - aged at 800 C for 100 h - were used for creep ...
Crystallography of grain boundary #alpha# precipitates in a #beta# titanium alloy
International Nuclear Information System (INIS)
The crystallography of #alpha#(hcp) precipitates formed on the #beta#(bcc) matrix grain boundaries has been studied with transmission electron microscopy (TEM) in a Ti-15V-3Cr-3Sn-3Al alloy. The #alpha# precipitates have a near-Burgers orientation relationship with respect to at least one of the adjacent #beta# grains. Among the possible 12 variants in this orientation relationship, the variant that [11 bar 20]_#alpha# is parallel to the _#beta# closest to the grain boundary plane tends to be preferred by the #alpha# precipitates. Additionally, further variant selections are made so as to minimize the deviation of orientation relationship with respect to the ''opposite'' #beta# grain from the Burgers one. Such rules in variant selection often result in the formation of precipitates with a single variant at a planar grain boundary. Prior small deformation of ...
1994-10-03
Controlled grain boundary structures in superconductors. Final report 1 Jan 77-31 Dec 81
Energy Technology Data Exchange (ETDEWEB)
Theoretical work supported by this grant has lead to the concept of the specific pinning force Q and the development of new methods to sum elementary interaction forces to find Q. Pinning due to changes in transition temperature or thermodynamic critical field in thin layers (e.g., a grain boundary), is greatly reduced due to the proximity effect and the stress field interaction due to the dislocations in the grain boundary has been shown to be negligible. The crystalline anisotropy (CA) and electron scattering (ES) interactions have been computed for the first time for an arbitrary boundary. Experiments on niobium bicrystals, polycrystalline niobium thin foils doped with oxygen, lead-bismuth alloy thin films and lead-bismuth alloy films in which either lead or thallium has been allowed to diffuse down the grain boundaries and out into the grains provide ...
1982-03-01
British Library Electronic Table of Contents (United Kingdom)
In this research, the interactive effect of grain and specimen sizes on the flow stress of sheet metal in microforming is investigated via the tensile test of pure copper and numerical modeling. Models based on different assumptions are proposed to analyze the size effect phenomenon. It is found that the flow stress decreases linearly with the decrease of the ratio of specimen to grain sizes. The grain boundary thickness decreases and its volume fraction increases with the decrease of grain size. The variation of grain boundary thickness is not proportional to the variation of grain size. Furthermore, the fraction of grain boundary increases with the strain and the ratio of specimen to grain sizes. Based on the FE simulation, it is found that the simulated flow stress, which is modeled bas...
2011-01-01
Localized deformation and IASCC initiation in austenitic stainless steels
International Nuclear Information System (INIS)
Localized deformation may play a key role in the underlying mechanism of irradiation assisted stress corrosion cracking (IASCC) in light water reactor core components. In this study, four austenitic alloys, 18Cr8Ni, 15Cr12Ni, 13Cr15Ni and 21Cr32Ni, with different stacking fault energies were irradiated to 1 and 5 dpa at 360 deg. C using 3.2 MeV protons. Interrupted constant extension rate tensile (CERT) tests were conducted in a simulated BWR environment to determine IASCC susceptibility. In order to characterize the localized deformation in slip channels and grain boundaries, parallel CERT experiments were also performed in an argon atmosphere. Results show that the IASCC susceptibility of the tested alloys increases with increasing irradiation dose and decreasing stacking fault energy. IASCC tends to initiate at locations where slip channels intersect grain boundaries. Localized deformation in the ...
2008-12-01
Grain boundary segregation of cation dopants in {alpha}-Al{sub 2}O{sub 3} scales
Energy Technology Data Exchange (ETDEWEB)
A Fe-20at.%Cr-10%Al matrix was dispersed with a wide range of different oxides in order to study the effect of oxygen-active dopants on the high-temperature growth and adhesion of {alpha}-Al{sub 2}O{sub 3} scales. Effect of these various cation dopants on the alumina scale microstructure was correlated with dopant ion segregation to the {alpha}-Al{sub 2}O{sub 3} grain boundaries using analytical electron microscopy. Elements such as Mn and V showed little effect on the oxide scale and were not observed to segregate. Elements such as Y and Gd resulted in finer, more columnar {alpha}-Al{sub 2}O{sub 3} grains and were segregated to scale grain boundaries. However, Ti, Ta, Ca, and Nb also were found to segregate but had a lesser effect on scale morphology. This indicates that cation segregation to scale grain boundaries is not a sufficient condition to achieve ...
1996-12-31
Dislocation plasticity and complementary deformation mechanisms in polycrystalline Mg alloys
Energy Technology Data Exchange (ETDEWEB)
Deformation mechanisms of Mg-Al-Zn (AZ31) alloys were investigated by performing tensile test at room temperature. In fine grain Mg alloys deformed at room temperature, nonbasal slip systems were found to be active as well as basal slip systems because of grain-boundary compatibility effect. Slip-induced grain-boundary sliding occurred as a complementary deformation mechanism to give rise to c-axis component of strain. With increasing grain size, the activation of the nonbasal slip systems was limited near grain boundaries. Instead of grain-boundary sliding, twinning occurred as a complementary deformation mechanism in large grained samples. Orientation analysis of twins indicated that twinning is induced by stress concentration due to the pile up of basal dislocations. The grain-size dependence on deformation mechanism was found to affect yielding behavior both microscopically and ...
2004-07-01
Observation of dislocation dynamics in the electron microscope
Deformation experiments performed in-situ in the transmission electron microscope have led to an increased understanding of dislocation dynamics. To illustrate the capability of this technique two examples will be presented. In the first example, the processes of work hardening in Mo at room temperature will be presented. These studies have improved our understanding of dislocation mobility, dislocation generation, and dislocation-obstacle interactions. In the second example, the interaction of matrix dislocations with grain boundaries will be described. From such studies predictive criteria for slip transfer through grain boundaries have been developed.
2001-01-17
Energy Technology Data Exchange (ETDEWEB)
The grain boundary crystallographic misorientations of magnetic-pulse-welded (MPW) aluminum alloy (AA) 6061-T6 in linear and tubular configurations were examined using the electron backscattered diffraction (EBSD) technique. A refined structure of heavily deformed grains with higher grain boundary angles was observed in linear welds. Significant spalling was observed away from the joints, in the interior of tubular welds. The results show the complex interaction of shock waves with the materials during this impact welding process.
2008-08-01
Grain boundary dissociation by the emission of stacking faults
Energy Technology Data Exchange (ETDEWEB)
A range of <110> symmetric tilt grain boundaries (GBs) are investigated in several fcc metals with simulations and high resolution electron microscopy. Boundaries with tilt angles between 50.5{degree} and 109.5{degree} dissociate into two boundaries 0.6 to 1.1 nm apart. The dissociation takes place by the emission of stacking faults from one boundary that are terminated by Shockley partials at a second boundary. This is a general mode of GB relaxation for low stacking fault energy metals. The reasons for the occurrence of this relaxation mode are discussed using the theory of GB dislocations.
1995-05-01
International Nuclear Information System (INIS)
Effect of scale on determination of 12Kh18N10T steel tendency to intergranular corrosion (IGC) by rapid electrochemical techniques in solution of 10 % H_2SO_4+0.0025 g/l KCNS was investigated. It is shown that scale presence of steel surface accelerates anode dissolving, activates grain boundaries. All this results to the effect of tendency to IGC in steels, not inclined to it. The scale is not completely removed from the surface, but remains partially along grain boundaries in result of successive pickling of scale and then a surface layer of metal. This also couses the effect of tendency to IGC.
1994-01-01
International Nuclear Information System (INIS)
In a program to develop a metastable beta alloy with improved fracture toughness, it was found that the tensile ductility of the alloy Ti-8 Mo-4.5 Cr-2.5 Al was strongly dependent on both processing history and annealing temperature. Evaluation of the microfracture mode of tensile samples by scanning electron microscope and metallographic techniques showed that the presence of a continuous grain boundary alpha is the most significant parameter controlling the ductility and is highly detrimental. It is concluded that, for optimum processing, the material must be worked prior to aging to avoid this grain boundary phase.
THE EFFECT OF INTERSTITIAL N ON GRAIN BOUNDARY COHESIVE STRENGTH IN Fe
Energy Technology Data Exchange (ETDEWEB)
Increased nitrogen levels have been correlated with decreased ductility and elevated ductile-to-brittle transition temperature in pressure vessel steels [1]. However, the exact role played by nitrogen in the embrittlement of steels remains unclear. Miller and Burke have reported atom probe ion microscopy findings from neutron-irradiated low-alloy pressure vessel steel showing the presence of a 1 to 2 ruonolayer thick film of Mo, N, and C at prior austenitic grain boundaries (GB's) [2], suggesting a role for nitrogen as an intergranular embrittler. It is of interest for the development of mitigation strategies whether nitrogen must combine with other impurities to form nitride precipitates in order to exert an embrittling effect. Briant et al [1] have associated the embrittling effect of N in steels exclusively with intergranular nitride formation. This association suggests that high nitrogen levels may be acceptable if nitride ...
2003-09-22
Effect of grain boundary microstructures of brittle fracture in polycrystalline molybdenum
Energy Technology Data Exchange (ETDEWEB)
Superplasticity can be generally achieved by grain boundary sliding (GBS). The GBS in polycrystalline materials sometimes accompanies with intergranular fracture because of stress concentrations at triple points and/or GB irregularities. To develop the superplastic flow, it is necessary to suppress the intergranular cracking. In the present study, therefore, polycrystalline molybdenum with distinct GB microstructures, such as grain boundary character distribution (GBCD), has been employed to clarify the relationship between fracture behaviour and GB microstructures. Microstructures were analyzed using a FE-SEM/EBSP/OIM system prior to 4-points bending tests at 77K, thereafter, crack propagation was observed. The main results obtained are as follows. Stress fluctuations on stress - strain curves were observed for specimens with random oriented grains, whereas such behaviour rarely occurred for ones with ...
1999-07-01
Stress corrosion cracking of type 304L stainless steel core shroud welds.
Energy Technology Data Exchange (ETDEWEB)
Microstructural analyses by advanced metallographic techniques were conducted on mockup welds and a cracked BWR core shroud weld fabricated from Type 304L stainless steel. heat-affected zones of the shroud weld and mockup shielded-metal-arc welds were free of grain-boundary carbide, martensite, delta ferrite, or Cr depletion near grain boundaries. However, as a result of exposure to welding fumes, the heat-affected zones of the welds were significantly contaminated by fluorine and oxygen which migrate to grain boundaries. Significant oxygen contamination promotes fluorine contamination and suppresses classical thermal sensitization, even in Type 304 steels. Results of slow-strain-rate tensile tests indicate that fluorine exacerbates the susceptibility of irradiated steels to intergranular stress corrosion cracking. These observations, combined with previous reports on the strong ...
1999-10-26
Stress corrosion cracking of austenitic stainless steel core internal welds.
Energy Technology Data Exchange (ETDEWEB)
Microstructural analyses by several advanced metallographic techniques were conducted on austenitic stainless steel mockup and core shroud welds that had cracked in boiling water reactors. Contrary to previous beliefs, heat-affected zones of the cracked Type 304L, as well as 304 SS core shroud welds and mockup shielded-metal-arc welds, were free of grain-boundary carbides, which shows that core shroud failure cannot be explained by classical intergranular stress corrosion cracking. Neither martensite nor delta-ferrite films were present on the grain boundaries. However, as a result of exposure to welding fumes, the heat-affected zones of the core shroud welds were significantly contaminated by oxygen and fluorine, which migrate to grain boundaries. Significant oxygen contamination seems to promote fluorine contamination and suppress thermal sensitization. Results of slow-strain-rate ...
1999-04-14
Energy Technology Data Exchange (ETDEWEB)
This paper describes inorganic solid electrolytes from a viewpoint of electrolytes for lithium batteries. Lithium ion conductive inorganic solid electrolytes are largely divided into crystalline and amorphous substances. Crystalline substances are known as LiI and Li3N, and also oxygen acid salt. However, when considering application to a battery, its large grain boundary resistance and electrochemical instability would be a problem. Lithium ion conductive amorphous solid electrolytes are divided into an oxide system and a sulfide system. Since most of them do not contain transition metal elements, they are stable against electrochemical reduction, and ions move isotropically in electrolyte. Therefore, ion conduction paths across the grain boundaries may be connected more easily, forming an electrolyte with low grain boundary resistance. As a result of the ...
1997-11-05
Oxide growth on aluminium alloys in the presence of ammonium fluoborate
Energy Technology Data Exchange (ETDEWEB)
The aim of this study as to determine the mechanisms involved in using ammonium fluoborate as a reducing atmosphere when preheating a high magnesium content aluminium alloy. Rutherford Backscattering (RBS) has been the major technique used in the analysis of samples, it revealed significant reduction in both the diffusion of magnesium to the surface and the calculated oxide thickness in the presence of NH{sub 4}BF{sub 4}. At temperatures above 500 deg C in air, SEM images revealed depressions and voids due to incipient melting at various stages, around the grain boundaries. Grain boundaries effectively acted as pipes aiding the diffusion of magnesium to the surface. These results have been verified through compositional analysis with both RBS and auger electron spectroscopy (AES). Results from NH{sub 4}BF{sub 4} atmosphere preheat conditions showed significant improvements. It was verified ...
1996-12-31
New deformation mechanisms in fine-grain Mg alloys
Energy Technology Data Exchange (ETDEWEB)
Deformation mechanisms were investigated in fine-grain (d=7 {mu}m) AZ31 Mg alloy in order to understand their excellent room-temperature ductility. Dislocation cross slip from basal to non-basal planes was found to occur easily at room temperature at a plastic anisotropy factor of only 1.5 instead of several tens to 100 expected from the single crystal CRSS data. Enhanced grain-boundary sliding (GBS) was also found to occur at room temperature. The contribution of GBS strain was found to be approximately 8% of total strain. The enhanced activity of non-basal dislocation slip and GBS was attributed to grain-boundary compatibility effects. Moreover, dynamic recovery was found to occur during deformation at room temperature associated with the formation of recovery twins and small-angle grain boundaries. The occurrence of these deformation mechanisms at room temperature was considered to be a major reason ...
2003-07-01
Diffusion-accomodated rigid-body translations along grain boundaries in nanostructured materials
Energy Technology Data Exchange (ETDEWEB)
A model for the structural relaxation of grain boundaries (GBs) in nanostructured materials (NSMs) by diffusion-accommodated rigid body translations along GBs is proposed. The model is based on the results of recent computer simulations that have demonstrated that the GBs in NSMs retain a high-energy structure with random translational states due to severe geometrical constraints applied from neighboring grains (J. Appl. Phys. 78 (1995) 847; Scripta Metall. Mater. 33 (1995) 1245). The shear stresses within a GB caused by non-optimized rigid-body translations (RBTs) can be accommodated by diffusive flow of atoms along a GB. This mechanism is particularly important for low-angle and vicinal GBs, the energy of which noticeably depends on the rigid body translations. At moderate and high temperatures the model yields relaxation times that are very short and therefore GBs in NSMs can attain an equilibrium structure with optimized rigid body ...
2003-10-25
Energy Technology Data Exchange (ETDEWEB)
We compare experimental measurements of inhomogeneous plastic deformation in a Ni bicrystal with crystal-plasticity simulations. Polychromatic X-ray microdiffraction, orientation imaging microscopy and scanning electron microscopy, were used to characterize the geometrically necessary dislocation distribution of the bicrystal after uniaxial tensile deformation. Changes in the local crystallographic orientations within the sample reflect its plastic response during the tensile test. Elastic strain in both grains increases near the grain boundary. Finite element simulations were used to understand the influence of initial grain orientation and structural inhomogeneities on the geometrically-necessary dislocations arrangement and distribution and to understand the underlying materials physics.
2009-01-01
Thermal stability of mixed-cation #alpha#-sialon ceramics
International Nuclear Information System (INIS)
A series of #alpha#-sialon (#alpha#') compositions containing mixed stabilising cations were prepared, by introducing additional CaO to a basic Sm #alpha#-sialon compositions. The thermal stability of these Sm-Ca-containing #alpha#-sialon phases was investigated using XRD, SEM and EDXS techniques. It was found that the addition of calcium into the Sm #alpha#-sialon systems greatly improved the stability of the #alpha#-sialon phases. Calcium was found to be incorporated into the #alpha#-sialon structure, coexistent with the samarium, and partitioning of the calcium and samarium was observed between the #alpha#' phase and grain boundary phases. This indicates a technique which may be used to improve the thermal stability of the #alpha#' phase while maintaining good refractory phases at the sialon grain boundaries.
2003-01-02
British Library Electronic Table of Contents (United Kingdom)
In this study, the thermodynamic stability of the grain boundaries and the grain growth of nanocrystalline Palladium (Pd) at various temperatures were investigated. For this purpose, the Gibbs free energy curves of grain boundaries were plotted in terms of the excess volume by the use of the equation of state (EOS) and Song's thermodynamic models. The results showed that, according to the prediction of these models, the nanocrystalline growth in metals was stopped at the grain sizes less than the critical grain size. Also, the results of the temperature variations and its effect on the Gibbs free energy curves showed that by the increase of the temperature, the possibility for the stoppage of grain growth is facilitated and the critical grain size is increased. To investigate the validity ...
2012-01-01
Sialon sintering product excellent in liquid sodium corrosion resistance
International Nuclear Information System (INIS)
A sialon sintering product of the present invention comprises #beta#'-sialon grains and less than 2vol% of a grain boundary phase, and a relative density of the sintering product is greater than 98%. It exhibits a high temperature strength of greater than 500Mpa at 650degC and shows such high corrosion resistances that the reduction of the volume due to corrosion is less than 0.5mg/cm"2 in a liquid sodium immersion test, and the corrosion of the grain boundary is not observed. Accordingly, there can be provided a sialon sintering product excellent in corrosion resistance in a liquid sodium circumstance while keeping the high temperature strength as an excellent characteristic of the sialon sintering product. (T.M.).
1995-04-19
Energy Technology Data Exchange (ETDEWEB)
The nickel-rich superalloys Alloy 600 and Alloy 800 have been corroded in mildly alkaline deuterated aqueous conditions typical of secondary coolant circuits in a nuclear power station. The oxide films and substrates of these alloys have been analysed by imaging SIMS depth profiling, which makes it possible to describe elemental distribution in all three dimensions. The measurement of the distribution of the secondary ions NiO[sup -], FeO[sup -] and CrO[sup -] appears useful for detailing the behaviour of nickel, iron and chromium within oxidized phases. The measurement of D[sup -] distribution outlines the extent of oxide hydration. For Alloy 800, evidence of sodium migration into the grain boundaries of the alloy substrate is found. For Alloy 600, no grain boundary sodium ingress can be identified under comparable corrosion conditions. (author).
1992-08-01
International Nuclear Information System (INIS)
The nickel-rich superalloys Alloy 600 and Alloy 800 have been corroded in mildly alkaline deuterated aqueous conditions typical of secondary coolant circuits in a nuclear power station. The oxide films and substrates of these alloys have been analysed by imaging SIMS depth profiling, which makes it possible to describe elemental distribution in all three dimensions. The measurement of the distribution of the secondary ions NiO"-, FeO"- and CrO"- appears useful for detailing the behaviour of nickel, iron and chromium within oxidized phases. The measurement of D"- distribution outlines the extent of oxide hydration. For Alloy 800, evidence of sodium migration into the grain boundaries of the alloy substrate is found. For Alloy 600, no grain boundary sodium ingress can be identified under comparable corrosion conditions. (author).
Irradiation effects on the electrochemistry and corrosion resistance of stainless steel
International Nuclear Information System (INIS)
Nickel ion radiation at 500 C was shown to have a strong effect on the surface electrochemistry and intergranular corrosion (IGC) of stainless steel (SS). Measured current densities in a 1 N sulfuric acid solution at room temperature were increased at active-passive, passive, and transpassive potentials. Radiation effects on the current decay behavior and susecptibility to IGC were similar for a fine-grained (FG) S alloy and for a very large-grained (LG) SS. Radiation-induced segregation (RIS) at the surface was believed to promote higher currents at short times, whereas segregation at grain boundaries was responsible for IG attack. Analytical electron microscopy (AEM) measurements revealed chromium and iron depletion plus Ni and silicon enrichment at grain boundaries in irradiated specimens. Si enhanced dissolution at transpassive potentials, whereas Cr depletion did the same at active-passive and ...
1995-01-01
Investigation of weld cracking in alloy 800
Energy Technology Data Exchange (ETDEWEB)
The subscale Varestraint test has been used to determine the relative hot cracking susceptibility of the fusion zone in four commercial heats of alloy 800. Although all four heats were susceptible to cracking, one heat exhibited a significant increase in cracking relative to the other three. Optical metallography revealed that nearly all the cracking was localized along fusion zone grain boundaries. Microprobe analysis of the grain boundaries detected high concentrations of titanium, silicon, and niobium resulting from partitioning during solidification. The fusion zone hot cracking mechanism in alloy 800 involves the complex interaction of titanium, silicon, niobium, and carbon along the solidification boundaries. SEM and Auger analyses of the hot crack fracture surfaces revealed the presence of (Ti, Nb)-rich carbides, suggesting that these particles precipitate from the liquid which solidifies last on ...
1984-03-01
Initial grain size effect of dynamic recrystallization of magnesium alloy AZ31
Energy Technology Data Exchange (ETDEWEB)
Dynamic development of new grain boundaries was studied in compression of a magnesium alloy AZ31 with initial grain sizes (D{sub 0}) of 22 {mu}m and 90 {mu}m at a temperature of 673 K. Kink bands are evolved near corrugated grain boundaries and in grain interiors at low strains accompanied with new fine grains. Kink bands are developed often perpendicular to the basal plane. The boundary misorientation of kink band as well as the volume fraction of new grains increases rapidly with increasing strain and approaches a saturation value in high strain. New fine grains are developed faster with decrease in the D{sub 0}. It is concluded that new grain evolution is controlled by a deformation-induced continuous reaction, i.e. continuous dynamic recrystallization (DRX). (orig.)
2003-07-01
Zirconia-ceria: additive influence on the sintering and electric conductivity
International Nuclear Information System (INIS)
Iron oxide as sintering aid to Ce-TZP ceramics produces a beneficial effect on the tetragonal phase stabilization. It was found that ceria powder particle size of 2,0 #mu#m turns the grain-boundary electrical conductivity higher than ceria powder of smaller grain size. (author)
1996-12-08
International Nuclear Information System (INIS)
Radiation hardening and radiation-induced chromium (Cr) depletion were related to intergranular stress corrosion cracking (IGSCC) response among various stainless steels (SS). Available data on neutron-irradiated materials were analyzed and correlations developed between fluence, yield strength, grain-boundary Cr concentration, and cracking susceptibility in high-temperature water environments. Large heat-to-heat differences in the critical fluence (0.2 neutrons/cm"2 to 2.5 x 10"2"1 neutrons/cm"2) for IGSCC were documented. Variability often was consistent with yield strength differences among irradiated materials. IGSCC correlated better to yield strength than to fluence for most heats, suggesting a possible role for radiation-induced hardening (and microstructure) on cracking. However, isolated heats revealed a wide range of yield strengths (450 MPa to 800 MPa) necessary to promote IGSCC which could not be explained by strength effects alone. ...
High resolution electron microscopy of interfaces in fcc materials
Energy Technology Data Exchange (ETDEWEB)
Modern high-resolution electron microscopy (HREM) instruments, which are capable of a point-to-point resolution of better than 0.2 nm, have allowed atomic-scale observations of a variety of internal interfaces. The application of the HREM technique to fcc model systems for the purpose of addressing a number of interface issues will be examined in this paper. Atomic structure observations for heterophase interfaces of metal/metal and metal/metal-oxide systems as well as HREM studies of grain boundaries in NiO and Au will be discussed with emphasis on generic structural features and the role of the interface plane. Comparisons between observed interface structures and atomistic computer modeling results have shown agreements for some interfaces, as well as certain differences in others. A number of structural features are common to both metal and oxide grain boundaries, as well as certain heterophase ...
1990-08-01
International Nuclear Information System (INIS)
In the present study, the relationship between the crystallographic orientations and growth directions of grain boundary-allotriomorphic-#alpha# (GB #alpha#) and secondary Widmanstaetten #alpha# laths growing from the GB #alpha# at grain boundaries separating #beta# grains with specific misorientations has been examined. These relationships have been determined using a variety of characterization techniques, including scanning electron microscopy, orientation imaging microscopy, transmission electron microscopy (TEM) and a dual-beam focused ion beam instrument to provide site-selected TEM foils. Two very interesting cases, one in which the two adjacent #beta# grains are rotated mutually by approximately 10.5"o about a common direction and the other in which the two #beta# grains are in a twin relationship, i.e. a 60"o rotation about a common direction, have been studied. It was discovered that the ...
2007-12-01
Energy Technology Data Exchange (ETDEWEB)
A simple and continuous model for the on-state current of polysilicon thin-film transistors, suitable for implementation in circuit simulators, is presented. The model includes the potential barrier at the grain boundaries, the channel length modulation and the excess current due to impact ionization. Comparison between measured output characteristics and the model shows excellent agreement over wide range of bias voltages and for devices with different gate lengths.
2005-01-01
Application of the shunted junction model to point-contact Josephson junctions
International Nuclear Information System (INIS)
1974. United States Taur, Y. Univ. of California, Berkeley Richards, PL Auracher,
Energy Technology Data Exchange (ETDEWEB)
To clarify the acidic and alkaline Intergranular Stress Corrosion Cracking (IGSCC) mechanism of thermally treated alloy 690 (alloy 690 TT) and shot peened alloy 800 (alloy 800 SP), C-ring tests were conducted in deaerated HCl solutions and in deaerated NaOH solutions at 350degC, compared with the acidic and the alkaline IGSCC susceptibilities of mill-annealed alloy 600 (alloy 600 MA), full-sensitized one (alloy 600 FS) and thermally treated one (alloy 600 TT). Grain boundary characteristics, such as chromium depleted zone and chromium carbide precipitation, were examined using modified Huey test and Transmission Electron Microscopy. Potential-pH diagram for Ni, Cr, Fe-H{sub 2}O system at 350degC was constructed and the solubilities of NiO, Cr{sub 2}O{sub 3} and Fe{sub 3}O{sub 4} were also calculated to evaluate the stability of oxide films which were formed on the surfaces of alloy 690, 800 and 600. Under the acidic condition, the IGSCC ...
2001-05-01
International Nuclear Information System (INIS)
To clarify the acidic and alkaline Intergranular Stress Corrosion Cracking (IGSCC) mechanism of thermally treated alloy 690 (alloy 690 TT) and shot peened alloy 800 (alloy 800 SP), C-ring tests were conducted in deaerated HCl solutions and in deaerated NaOH solutions at 350degC, compared with the acidic and the alkaline IGSCC susceptibilities of mill-annealed alloy 600 (alloy 600 MA), full-sensitized one (alloy 600 FS) and thermally treated one (alloy 600 TT). Grain boundary characteristics, such as chromium depleted zone and chromium carbide precipitation, were examined using modified Huey test and Transmission Electron Microscopy. Potential-pH diagram for Ni, Cr, Fe-H_2O system at 350degC was constructed and the solubilities of NiO, Cr_2O_3 and Fe_3O_4 were also calculated to evaluate the stability of oxide films which were formed on the surfaces of alloy 690, 800 and 600. Under the acidic condition, the IGSCC susceptibility of alloy 800 SP ...
2001-05-01
International Nuclear Information System (INIS)
The present study has examined for #alpha#/#beta#-Ti alloys the relationship between the morphology and crystallography of Widmanstaetten plates of #alpha#-Ti in colonies within a prior grain of #beta#-Ti. Thus, optical metallography, scanning electron microscopy and transmission electron microscopy have been used to characterize the morphological features of the microstructure, whereas orientation-imaging microscopy (OM) and transmission electron microscopy (TEM) have been employed to reveal crystallographic information. It has been discovered that within a prior #beta#-Ti grain, although the growth direction of the Widmanstaetten plates in given colonies may differ by large angles from #alpha#-plates in other colonies, they may exhibit very close crystallographic relationships. For example, inclined #alpha#-plates may share common basal planes and be related by a rotation of #approx#10.5 deg. about the c-axis of the crystals. This phenomenon has been interpreted on the basis of ...
2003-09-15
The effect of precipitated carbides on the pitting corrosion of 304 stainless steel
International Nuclear Information System (INIS)
In order to investigate the relation between the pitting corrosion and precipitated carbides, the heat treatment of specimens was carried out in two ways: Solution treatment and carbides precipitation treatment. The experiment was focused on the polarization curves of specimens immersed in HCL solution and on the microscopic analysis of the corroded specimens through a potentiodynamic method. It was found out that the intergranular and pitting corrosion occurred remarkably in 0.1N and 1N KCL solution when carbides were precipitated around the grain boundary of the 304 stain steel. The intergranular corrosion was noticed in the region of passivation and the pitting was prominent in the region of passivation break-down. The distribution of pits on the solution treated 304 stainless steel was random, while that of pits on carbides precipitated specimen was concentrated around the grain boundary in 0.1N and ...
British Library Electronic Table of Contents (United Kingdom)
TaC and TaC-1wt.% B4C powders were consolidated using spark plasma sintering (SPS) at 1850^oC and varying pressure of 100, 255 and 363MPa. The effect of pressure on the densification and grain size is evaluated. The role of nano-sized B4C as sintering aid and grain growth inhibitor is studied by means of XRD, SEM and high resolution TEM. Fully dense TaC samples were produced at a pressure of 255MPa and higher at 1850^oC. The increasing pressure also resulted in an increase in TaC grain size. Addition of B4C leads to an increase in the density of 100MPa sample from 89% to 97%. B4C nano-powder resists grain growth even at high pressure of 363MPa. The formation of TaB2/Carbon at TaC grain boundaries helps in pinning the grain boundary and inhibiting grain growth. The effect of B4C addition on...
2011-01-01
Relation between precipitate-free zone width and grain boundary type in 7075-T7 Al alloy
Energy Technology Data Exchange (ETDEWEB)
The effect of grain boundary (GB) type on precipitate-free zone (PFZ) width in friction stir-processed 7075-T7 Al alloy is investigated by transmission electron microscopy (TEM) and stereology. The average half width of PFZs at random GBs is 70.4 {+-} 0.7 nm. For low-angle GBs, an apparent transition of PFZ half width is observed at a misorientation of 11 deg. For coincidence site lattice ({sigma}) GBs, only {sigma}1, {sigma}3 and {sigma}5 have smaller PFZ width than that of random GBs. Crystal-frame stereology is used to recover the GB plane distribution. It is found that the GB plane distribution is relatively isotropic for most {sigma} GBs. Low/high index plane combinations are observed for most {sigma} GBs; furthermore, most {sigma} GBs have both tilt and twist components. The combined results of TEM and stereology suggest that smaller PFZ width is associated only with low {sigma} GBs since the formation and growth of PFZs at GBs depends ...
2007-03-15
Recycling of AZ31 Mg alloy with high purity Mg deposition layer by hot working (solid recycling)
Energy Technology Data Exchange (ETDEWEB)
Solid recycling of AZ31 Mg alloy with vapor deposition coating layer of high purity Mg was evaluated. In the open die forging experiments, two AZ31 Mg alloy specimens with the pure Mg layer were sufficiently bonded by forging at 673 K. Furthermore, the Al and Zn of the AZ31 substrate diffused up to the center of the pure Mg layer. By the theoretical analysis, it is suggested that the grain boundary diffusion enhanced by grain refinement due to hot forging contributes to the solid state bonding of the specimens. Also, the solid recycled specimen was fabricated from the AZ31 Mg substrate with pure Mg layer by hot extrusion at 673 K. The solid recycled specimen showed almost the same tensile properties as the virgin extruded specimen. This is probably related not only to the grain boundary diffusion but also severe plastic deformation by hot extrusion. (orig.)
2003-07-01
Recrystallization in AZ31 magnesium alloy during hot deformation
Energy Technology Data Exchange (ETDEWEB)
In this study, isothermal torsion tests were carried out on magnesium AZ31B alloy under constant strain rate conditions, in the range of 250 to 400 C at 0.01, 0.1, and 1.0 s{sup -1}. Alloy flow stress dependence on strain rate and temperature can be described by a power law with activation energy of 130 kJ/mol. Microstructural examination of hot deformed samples shows very fine recrystallized grains decorating grain boundaries of larger gains in the form of a necklace. These fine grains are produced by dynamic recrystallization at the grain boundaries of original grains. Microstructure evolution, based on samples quenched at different strain levels, indicates that increasing deformation strain has little effect on recrystallized grain size but widens the recrystallized region, with full recrystallization achieved at a certain high strain level. Recrystallized grain size increases with increasing ...
2005-07-01
Energy Technology Data Exchange (ETDEWEB)
Fine-grained AZ31 magnesium alloy sheets were prepared through hot rolling process. The superplastic properties of hot-rolled AZ31 Mg alloy was examined by uniaxial tensile tests at a temperature range 250{proportional_to}450 C and strain rate range 0.7 x 10{sup -3}{proportional_to}1.4 x 10{sup -1} s{sup -1}. Optical and scanning electronic microscope (SEM) were used to observe the microstructure evolution and fracture behavior in superplastic deformation of AZ31 Mg alloy and the values of deformation activation energy at various temperatures were calculated. It is demonstrated that, the hot-rolled AZ31 alloy begins to exhibit superplasticity from 300 C and a maximum elongation of 362.5% is obtained at 400 C and 0.7 x 10{sup -3} s{sup -1}. In the temperature range 300{proportional_to}400 C, the dominant superplastic deformation mechanism is grain boundary sliding (GBS) controlled by grain boundary ...
2005-07-01
Microstructure design of dielectric ceramics; Yudentai seramikkusu no bikozo sekkei
Energy Technology Data Exchange (ETDEWEB)
In order to design the microstructure of ceramics with desired dielectric property, an estimation method of dielectric constant of ceramics taking into account the characteristics of microstructure of the ceramics is proposed. In the estimation model, the microstructure of ceramics is represented by the assembly of unit cells comprising of grain, pore and grain boundary. The sizes of grain and pore and the thickness of grain boundary in each unit cell were determined exactly according to their size and thickness distributions in a real ceramic. The dielectric constant of the assembly can be calculated on the basis of equivalent circuit theory. The estimated values of dielectric constant of ceramic BaTiO{sub 3} using the proposed estimation method agree well with experimental ones. The dependence of characteristics of microstructure on the dielectric constant was clarified by the estimation of dielectric ...
2000-11-10
Microstructural characterization of dissimilar welds between alloy 800 and HP heat-resistant steel
International Nuclear Information System (INIS)
In this study, dissimilar welds between HP heat-resistant steel and Incoloy 800 were made with four different filler materials including: 309 stainless steel and nickel-based Inconel 82, 182 and 617. The microstructure of the base metals, weld metals and their interfaces were characterized by utilizing optical and scanning electron microscopy. Grain boundaries migration in the weld metals was studied. It was found that the migration of grain boundaries in the Inconel 82 weld metal was very extensive. Precipitates of TiC and M_2_3C_6 (M = Cr and Mo) in the Inconel 617 weld metal are identified. The necessary conditions for the formation of cracks close to the fusion line of the 309-HP joints are described. Furthermore unmixed zone near the fusion line between HP steel base metal and Inconel 82 weld metal is discussed. An epitaxial growth is characterized at the fusion line of the 309-Alloy 800 and ...
2008-10-01
International Nuclear Information System (INIS)
The formation of the melilite solid solution phase (M'), Sm_2Si_3_-_xAl_xO_3_+_xN_4_-_x, in an #alpha#-sialon sample of overall composition Sm_0_._6Si_9_._2_8Al_2_._6_9O_1_._3_6N_1_4_._7_6, was studied as a function of time in the temperature interval 1,375--1,525 C. The #alpha#-sialon ceramic contained only minor amounts of the 21R sialon polytype and some residual grain-boundary glass before heat treatment. In situ studies by high-temperature X-ray diffraction were combined with postsintering heat treatment followed by quenching. The M'-phase was found to be formed by two different mechanisms: either crystallization of the residual grain-boundary liquid or a direct decomposition of the #alpha#-sialon phase. The liquid crystallized during the first 10--15 min of heat treatment, yielding a rapid M'-phase formation, and further formation of M'-phase continued at a much slower rate, related to the decomposition of #alpha#-sialon.
High lithium ion conductive Li7La3Zr2O12 by inclusion of both Al and Si
British Library Electronic Table of Contents (United Kingdom)
High lithium-ion (Li^+) conductive garnet-structured lanthanum lithium zirconate (LLZ) solid electrolyte is prepared by incorporation of appropriate amounts of silicon (Si) and aluminum (Al). The resultant pelletized LLZ obtains total Li^+ conductivity of 6.8x10^-^4Scm^-^1 at 298K. This improved conductivity is nearly identical with the bulk Li^+ conductivity of the LLZ reported earlier, suggesting that the grain boundary resistance is effectively reduced by the incorporation of Si and Al. Microanalyses by transmission electron microscopy coupled with energy-dispersive X-ray microanalysis and electron energy-loss spectroscopy revealed the presence of amorphous Li-Al-Si-O with nano crystalline LiAlSiO4 at grain boundaries. Fast lithium-ion transport around the amorphous Li-Al-Si-O/LiAlSiO4 ...
2011-01-01
Grain boundary transport in x-ray irradiated polycrystalline diamond
International Nuclear Information System (INIS)
The transport properties of a 'thin' polycrystalline diamond film are analyzed after the sample exposure to 8.06-keV x-ray radiation. Structure and morphology of the as-grown film have been evaluated by Raman, x-ray diffraction, and scanning electron microscopy techniques. The transport properties have been investigated by measuring dark current-voltage characteristics in the temperature range of 60 to 360 K. Ohmic transport has been evidenced on the as-grown film up to 1.16x10"5 V/cm. After irradiation, nonlinear contributions to the dark current have been evidenced and related to field-assisted thermal ionization of traps. Below 200 K, hopping mechanisms have been observed. Correlations have been found among x-ray irradiation, density of traps involved in the transport processes, and the nonhomogeneous nature of the sample. A simple model of the grain boundary structure is proposed to explain the observations.
2003-05-15
Grain boundary mobility in Y{sub 2}O{sub 3}: defect mechanism and dopant effects
Energy Technology Data Exchange (ETDEWEB)
The effects of the dopants, Mg{sup 2+}, Sr{sup 2+}, Sc{sup 3+}, Yb{sup 3+}, Gd{sup 3+}, La{sup 3+}, Ti{sup 4+}, Zr{sup 4+}, Ce{sup 4+}, and Nb{sup 5+}, on the grain boundary mobility of dense Y{sub 2}O{sub 3} have been investigated from 1,500 to 1,650 C. Parabolic grain growth has been observed in all cases over a grain size from 0.31 to 12.5 {micro}m. Together with atmospheric effects, the results suggest that interstitial transport is the rate-limiting step for diffusive processes in Y{sub 2}O{sub 3}, which is also the case in CeO{sub 2}. The effect of solute drag cannot be ascertained but the anomalous effect of undersized dopants (Ti and Nb) on diffusion enhancement, previously reported in CeO{sub 2}, is again confirmed. Indications of very large binding energies between aliovalent dopants and oxygen defects are also observed. Overall, the most effective grain growth inhibitor is Zr{sup 4+}, while the most potent grain growth promoter is ...
1996-07-01
Grain boundary mobility in Y_2O_3: defect mechanism and dopant effects
International Nuclear Information System (INIS)
The effects of the dopants, Mg"2"+, Sr"2"+, Sc"3"+, Yb"3"+, Gd"3"+, La"3"+, Ti"4"+, Zr"4"+, Ce"4"+, and Nb"5"+, on the grain boundary mobility of dense Y_2O_3 have been investigated from 1,500 to 1,650 C. Parabolic grain growth has been observed in all cases over a grain size from 0.31 to 12.5 microm. Together with atmospheric effects, the results suggest that interstitial transport is the rate-limiting step for diffusive processes in Y_2O_3, which is also the case in CeO_2. The effect of solute drag cannot be ascertained but the anomalous effect of undersized dopants (Ti and Nb) on diffusion enhancement, previously reported in CeO_2, is again confirmed. Indications of very large binding energies between aliovalent dopants and oxygen defects are also observed. Overall, the most effective grain growth inhibitor is Zr"4"+, while the most potent grain growth promoter is Sr"2"+, both at 1.0% concentration.
International Nuclear Information System (INIS)
Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At that, boron ...
1984-01-01
Effect of low copper content and heat treatment on intergranular corrosion of model AlMgSi alloys
International Nuclear Information System (INIS)
Certain 6000-series extrusions may develop susceptibility to intergranular corrosion (IGC) by improper heat treatment, especially if copper is present as an alloying element. Although occurrence of IGC in such cases is documented, the underlying mechanisms are not adequately explained. We present corrosion data for two model alloys, having different Cu content and Mg:Si ratio, showing that the susceptibility to IGC depended primarily on the Cu content and secondly on thermal processing. Low Cu samples (0.0005 wt.% Cu) were essentially resistant to IGC. High Cu samples (0.12 wt.% Cu), which were air cooled after extrusion, exhibited significant IGC. However, IGC susceptibility was reduced significantly as a result of artificial aging to peak strength. Water quenched high Cu samples were essentially resistant to IGC. However, slight IGC susceptibility was introduced after aging. Electron optical characterisation revealed Al_4Mg_8Si_7Cu_2 (Q-phase) grain ...
2006-01-01
Dynamic nucleation of new grains in magnesium alloy during hot deformation
Energy Technology Data Exchange (ETDEWEB)
Microstructure evolution under hot deformation was investigated in compression of a magnesium alloy AZ31 at 673 K (0.73T{sub m}). Two kinds of samples were machined along the parallel and transverse direction of the extruded rods. New fine grains are evolved at corrugated grain boundaries at low strains and developed rapidly in grain interiors in the medium range of strain, finally leading to a roughly full evolution of equiaxial fine grains. Kink bands are evolved at corrugated grain boundaries and in grain interiors at low strains. The boundary misorientation of kink band increases rapidly with increasing strain. These characteristics of new grain evolution process are not changed by the orientation of the samples, while the flow behaviors clearly depend on it. It is concluded that new grain evolution can be controlled by a deformation-induced continuous reaction resulting in grain fragmentation by ...
2003-07-01
Dielectric properties of fluxed barium titanate ceramics with zirconia additions
Energy Technology Data Exchange (ETDEWEB)
BaTiO{sub 3} compacts, when fluxed with {lt} 2 vol% of a complex borate glass phase, were sintered to near theoretical density at temperatures {lt} 1175{degrees}C in 2 h. Microstructural analysis showed a uniform grain size {lt} 1.0 {mu}m with 0.75 wt% ZrO{sub 2} added to the flux phase as a grain growth inhibitor. TEM analysis revealed a microcrystalline grain-boundary phase with the ZrO{sub 2} resident along the grain boundaries. These samples displayed an essentially flat dielectric profile, low dissipation factors ({lt} 2%) over the range 25{degrees} to 125{degrees}C, a near linear dependence ({approx} {+-} 15%) between 25{degrees} and {minus} 55{degrees}C, and significantly increased voltage stability. X-ray diffraction analysis of these small-grained materials indicates a suppression of the tetragonal structure toward a more cubic modification.
1990-03-01
Dielectric properties of fluxed barium titanate ceramics with zirconia additions
International Nuclear Information System (INIS)
BaTiO_3 compacts, when fluxed with < 2 vol% of a complex borate glass phase, were sintered to near theoretical density at temperatures < 1175 degrees C in 2 h. Microstructural analysis showed a uniform grain size < 1.0 #mu#m with 0.75 wt% ZrO_2 added to the flux phase as a grain growth inhibitor. TEM analysis revealed a microcrystalline grain-boundary phase with the ZrO_2 resident along the grain boundaries. These samples displayed an essentially flat dielectric profile, low dissipation factors (< 2%) over the range 25 degrees to 125 degrees C, a near linear dependence (#approx# #+-# 15%) between 25 degrees and - 55 degrees C, and significantly increased voltage stability. X-ray diffraction analysis of these small-grained materials indicates a suppression of the tetragonal structure toward a more cubic modification.
Deposition of Cu film on SiO_2 using a partially ionized beam
International Nuclear Information System (INIS)
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, compositional and electrical properties are discussed in the framework of Mayadas ...
1990-01-01
Deposition of Cu film on SiO sub 2 using a partially ionized beam
Energy Technology Data Exchange (ETDEWEB)
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, compositional and electrical properties are discussed in the ...
1990-05-01
Deposition of Cu film on SiO sub 2 using a partially ionized beam
Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. The correlation between the structural, compositional and electrical properties are discussed in the ...
1990-05-01
Energy Technology Data Exchange (ETDEWEB)
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
1997-07-01
International Nuclear Information System (INIS)
The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.
Energy Technology Data Exchange (ETDEWEB)
The susceptibility to intergranular corrosion of different heats of Alloy 800 was evaluated by three different methods: the ASTM A 262 Practice E (or modified Strauss test), the Electrochemical Potentiokinetic Reactivation method, and by magnetic-susceptibility measurements. Reasonably good agreement was found between the sensitization areas as defined by the three methods in the TTS diagrams. In some cases the area defined by the Strauss test was slightly smaller than that determined by the other two tests. The differences might be explained by the fact that the methods present different sensitivities to the chromium concentration at the grain boundaries. 27 references, 11 figures, 3 tables.
1982-01-01
Energy Technology Data Exchange (ETDEWEB)
Optimum conditions for microstructural control in industrial hot working of cast and homogenized AZ31 magnesium alloys are evaluated by using a processing map. The recommended window for bulk metal working of this alloy is the domain in the temperature range 300-450 C and strain rate range 1-10 s{sup -1}, and the optimum processing parameters are 400 C and 10 s{sup -1}, where grain-boundary self diffusion is the rate-controlling mechanism. (Abstract Copyright [2009], Wiley Periodicals, Inc.)
2009-03-15
Damage mechanism in high temperature fatigue of alloy 800 H
Energy Technology Data Exchange (ETDEWEB)
In order to investigate the influence of grain boundary cavities on the life time of Alloy 800 H various fatigue tests have been performed at 800/sup 0/C. Cavity formation has been observed only in asymmetrical tests. Compared to the corresponding symmetrical tests, the cyclic life time is shorter. As the cavitation damage increases, the ratio of life times in vacuum and in air steadily decreases from an initial value of 5. In extreme cases it can reach a value close to 1. In this case, cavitation damage dominates over the usual damage mechanism, which is cracks from the surface.
1986-09-01
Anisotropy of H/sub c2/ and its implications to grain-boundary flux pinning in V$sub 3$Si
The anisotropy of H/sub c2/ was measured in a V$sub 3$Si monocrystal and was found to be much larger than in other materials. The max elementary pinning force f/sub p/ is estimated to be approximately 0.01 dyn/cm at the reduced field H/H/sub c/ = 0.25 and 4.2$sup 0$K. Control of texture as well as of grain size is important for improving J/sub c/ in A-15 compounds. (DLC)
1975-10-01
The influence of martensite on the strength and impact behavior of steel
Energy Technology Data Exchange (ETDEWEB)
The influence of high C martensite on the strength and impact behavior of C-Mn-Nb-Al steels has been determined for two distributions: films surrounding the ferrite grains and distinct colonies. In the former case, the impact behavior markedly deteriorated, this deterioration increasing with martensite level. The changes in impact behavior could be explained by regarding the films of martensite as being similar to the brittle grain boundary carbides that are present in ferrite-pearlite steels. These films readily crack, yet are always thick enough to produce a sufficient wide crack to render crack propagation easy. The critical event in fracture then becomes the ability to propagate the cracks through the grain boundaries. The greater the grain boundary coverage by these films, the easier this becomes and the worse is the impact behavior. When the martensite is ...
1997-10-01
Energy Technology Data Exchange (ETDEWEB)
The aim of this work is to account for the effects of the high temperature oxidation of metals on their microstructure and their mechanical properties. 'Model' materials like pure nickel, pure iron and the Ni-20Cr alloy are studied. Nickel foils have been oxidised at 1000 C on one side only in laboratory air, the other side being protected from oxidation by a reducing atmosphere. After the oxidation treatment, the unoxidized face was carefully examined by using an Atomic Force Microscope (AFM). Grain boundaries grooves were characterised and their depth were compared to the ones obtained on the same sample heat treated in the reducing atmosphere during the same time. They are found to be much deeper in the case of the single side oxidised samples. It is shown that this additional grooving is directly linked to the growth of the oxide scale on the opposite side and that it can be explained by the diffusion of the vacancies ...
2004-11-15
Grain growth in CeO{sub 2}: dopant effects, defect mechanism, and solute drag
Energy Technology Data Exchange (ETDEWEB)
The effects of the dopants, Mg{sup 2+}, Ca{sup 2+}, Sr{sup 2+}, Sc{sup 3+}, Yb{sup 3+}, Y{sup 3+}, Gd{sup 3+}, La{sup 3+}, Ti{sup 4+}, Zr{sup 4+}, and Nb{sup 5+}, on the grain boundary mobility of dense CeO{sub 2} have been investigated from 1,270 to 1,420 C. Parabolic grain growth has been observed in all instances. Together with atmospheric effects, the results support the mechanism of cation interstitial transport being the rate-limiting step. A strong solute drag effect has been demonstrated for diffusion-enhancing dopants such as Mg{sup 2+} and Ca{sup 2+}, which, at high concentrations, can nevertheless suppress grain boundary mobility. Severely undersized dopants (Mg, Sc, Ti, and Nb) have a tendency to markedly enhance grain boundary mobility, probably due to the large distortion of the surrounding lattice that apparently facilitates defect migration. ...
1996-07-01
Energy Technology Data Exchange (ETDEWEB)
TiO{sub 2} is a vital material in several technologies including, photocatalysis, gas sensing, biomaterials and optical coatings. Among the several crystal structures of this oxide, rutile has the highest density and microhardness, the highest index of refraction and the highest temperature stability. The processing of dense polycrystalline materials often includes the addition of a liquid-forming phase at higher temperatures. This technique is known as liquid-phase sintering and has been studied extensively. Rutile boundaries containing an amorphous phase have been used to study boundary migration and grain-boundary grooving. Visible-light (VLM), scanning electron (SEM) and transmission electron microscopy (TEM) in addition to electron-backscatter diffraction (EBSD) and a focused-ion beam (FIB) tool were used to characterize boundary migration in rutile. EBSD analysis was carried out on a Philips XL30 FEG SEM equipped with a DigiView 1612 high-resolution, ...
2003-08-01
QCCM - Center for NMR Quantum Information Processing
... decoherence. Descriptors : *QUANTUM COMPUTING, NUCLEAR MAGNETIC RESONANCE, JOSEPHSON JUNCTIONS. Subject ...
2011-02-16
High-efficiency solar cell and method for fabrication
A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional ...
1999-08-31
The influence of aging on the intergranular corrosion of 22 chromium-5 nickel duplex stainless steel
International Nuclear Information System (INIS)
Duplex stainless steels are widely used in severe corrosion environments because of their good corrosion performance. This paper deals with the influence of aging treatments on the intergranular corrosion (IGC) resistance of a commercial duplex stainless steel, SAF 2205. Duplex stainless steel was given aging treatments in the range 773-1173 K for time periods ranging from 6 min to 100 h. Optical microscopy and XRD was carried out on the aged stainless steels for the microstructural study. The aged samples were evaluated for the IGC susceptibility with the ASTM standard practices. Potentiodynamic cyclic polarization studies were also carried out to investigate the influence of aging treatments on the passivity breakdown. The results indicate that the sigma phase gets precipitated and is responsible for grain boundary attack. (author).
International Nuclear Information System (INIS)
The effect of W and V on the high temperature strength properties of 12%Cr-15%Mn austenitic steels was studied from the view point of precipitation hardening and internal stress. The contribution of W addition to the tensile and creep-rupture strength was not so large. By contrast the combined addition of W and V increased the strength considerably. These are resulted from the precipitation of fine vanadium nitride (VN) within grains and the enhancement of M_2_3C_6 type carbide precipitation at grain boundaries. The V added material had large internal stress value which is considered to be due to dislocation movement disturbed by fine vanadium nitrides. (author).
The compatibility of alloy 800 in HTR atmospheres
International Nuclear Information System (INIS)
A thermodynamic analysis of the behaviour of Alloy 800 in helium based atmospheres relevant to the High Temperature Gas Cooled Reactor indicates that, depending upon the precise gas composition, oxidation and carburisation, or carburisation alone may be expected. The prime influence appears to be the moisture level. The morphology and structure of the reaction products are discussed. It is shown that the 'reactive' elements chromium, manganese, titanium and silicon are concentrated in the oxide scale which is normally duplex in structure. Aluminium oxide is formed at grain boundaries and in an internal oxidation zone together with titanium and sometimes silicon. In carburising conditions, mixed titanium-chromium carbides are formed. When this occurs, intergranular penetration is maximised. Weight gain data are assessed and briefly described and a tentative model for the mechanism of corrosion of Alloy 800 in HTR helium is proposed. Areas for ...
Study of Zircaloy-2 corrosion in high temperature water using ion beam methods
Energy Technology Data Exchange (ETDEWEB)
Experiments have been carried out in water at 355 C to study transport of oxygen and hydrogen (as deuterium) in growing corrosion films. Composition of the films was also examined in 2.9 Mev and 3.9 Mev /alpha/-particle backscattering experiments. Corrosion occurs predominantly by oxygen diffusion through the film via grain boundary or similar short circuit diffusion paths, to form fresh oxide at the oxide metal interface. Increasing grain size within thick pre-breakaway films contributes to a decrease in diffusivity. The rate transition results from the generation of new diffusion pathways in previously protective oxide. Unexpectedly high concentrations of deuterium were observed. 26 refs.
1981-10-01
Stress corrosion cracking: 1965-1990
Energy Technology Data Exchange (ETDEWEB)
Advances in the theory and practice of stress corrosion cracking (SCC) are reviewed for the period 1965-1990. The proceedings of two landmark conferences are used as a basis for discussion: Ohio State University (1967) and Kohler, WI (1988). The discussion is developed around the following topics: metal-environment combinations, testing, fractography, metallurgical aspects, electrochemical aspects and crack chemistry, mechanisms, and prediction and mitigation. It is concluded that the main developments since 1967 are the recognition of the lack of specificity of SCC environments, the use of slow strain rate and fracture mechanics testing, quantitative SEM fractography, studies of grain boundary structure and compositions, transient electrochemistry of bare metal surfaces, measurement and modelling of crack chemistry, elaboration of several SCC models, including slip-dissolution and film induced cleavage, and mitigation by alloy development or ...
1990-01-01
International Nuclear Information System (INIS)
Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).
1989-12-04
Quantitative non-destructive evaluation of high-temperature superconducting materials
Energy Technology Data Exchange (ETDEWEB)
Even though the currently intensive research efforts on high- temperature superconducting materials have not yet converged on a well specified practical material, the indications are that such a material may be quite brittle, anisotropic, and may contain many flaws such as microcracks and voids at grain boundaries. Consequently, practical applications of high temperature superconducting materials will require a very careful strength analysis based on fracture mechanics considerations. Because of the high sensitivity of the strength of such materials to the presence of defects, methods of quantitative non-destructive evaluation may be expected to play an important role in strength determinations. This proposal is concerned with the use of ultrasonic methods to detect and characterize isolated cracks, clusters of microcracks and microcracks distributed throughout the material. Particular attention has been, and will continue to be devoted to ...
1991-06-14
Phase formation sequence in the Pd-GaAs system
Energy Technology Data Exchange (ETDEWEB)
The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.
1985-12-01
Nanostructuring and hardening of LiF crystals irradiated with 3?15 MeV Au ions
British Library Electronic Table of Contents (United Kingdom)
Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 1013 ions/cm2)?was?observed. Nanoindentation tests show a strong ion-induced increase of hardness (up?to 150?200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the?depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating i...
2011-01-01
Models for growth kinetics of A-15 compounds by solid state diffusion
International Nuclear Information System (INIS)
In the formation of A-15 superconducting compounds by solid state diffusion, the time exponent in the growth law under different experimental conditions varies widely from about 0.25 to 1.0. Specific models of growth for different operative rate-controlling conditions are proposed. When the diffusion of B atoms in the matrix is rate-controlling, the thickness of the reacted compound layer increases as tsup(1/2) or tsup(2/3). When the diffusion of B atoms through the compound layer is rate controlling, a tsup(1/2) dependence both for bulk diffusion and grain-boundary diffusion is predicted. When substantial grain growth occurs in the reacted layer during the diffusion anneal, the time exponent observed could be as low as 1/4. Experimental data in support of the predictions of the proposed models are presented. (author).
Microstructure-property relationships in beryllia-ceramics sintered to near theoretical density
Energy Technology Data Exchange (ETDEWEB)
The use of selective additives such as MgO as a sintering aid and a rare earth oxide as a grain growth inhibitor, has allowed the manufacture of beryllia ceramics having close to theoretical density. The grain size and grain size distribution can be controlled by an optimum firing schedule leaving a remnant porosity which is extremely fine (0.2 {mu}m). This structure is compared with conventional BeO ceramics, densified by liquid phase sintering, which develops a glassy grain boundary and retains large pores up to 3 {mu}m. The significantly improved strength properties, extremely fine pores,the 'pinning effect' of rare earth oxide, and the superior surface finish both in the as-fired and polished state are discussed in relation to the micro-structure. (orig.).
1989-01-01
Microstructure and mechanical behaviour of an elevated temperature Mg-rare earth based alloy
International Nuclear Information System (INIS)
AM-SC1 is a heat treatable magnesium alloy that has been specifically developed to achieve the elevated temperature strength and creep properties necessary for engine block applications. This paper describes the interrelationship between the microstructure and the mechanical properties of AM-SC1. The compressive and tensile strengths are relatively insensitive to temperature up to and including 450 K and the tensile yield behaviour deviates from a standard Hall-Petch relationship at grain sizes below 200 ?m. The microstructural features contributing to the creep resistance are both inter- and intra-granular in nature and are on length scales from nanometers to micrometers. The creep behaviour at 423 K and 450 K is diffusion controlled, with any contribution from the grain boundaries being negligible.
2009-04-15
Microstructural features in sintered Si_3N_4/SiC platelets systems
International Nuclear Information System (INIS)
Analytical TEM and high resolution TEM were used in the microstructural characterization of hot-press sintered Si_3N_4-SiC platelets composites. The quantity of sintering additives, Er_2O_3 and AlN, was varied to produce different matrices, e. g. Si_3N_4, #beta#'+#alpha#'-Sialon and #alpha#'-Sialon. Detailed analysis of platelet-sialon matrix interfaces revealed the presence of AlN polytypoids. The polytypoids nucleate preferentially onto the (0001) plane of SiC and growth epitaxially in several ten nanometer layers contributing in this way to crystallize, partially, the matrix intergranular glass pockets contacting the platelets. Possible applications of the phenomena to microstructural control, grain boundary phase control and enhanced creep resistance are discussed. (orig.).
1993-10-04
Mechanical properties of B-modified Ti-6Al-4V alloys
International Nuclear Information System (INIS)
Minor addition of B to the Ti-6Al-4V alloy reduces the prior #beta# grain size by more than an order of magnitude. TiB formed in-situ in the process has been noted to decorate the grain boundaries. This microstructural modification influences the mechanical behavior of the Ti-6Al-4V alloy significantly. In this paper, an overview of our current research on tensile properties, fracture toughness as well as notched and un-notched fatigue properties of Ti-6Al-4V-xB with x varying between 0.0 to 0.55 wt.% is presented. A quantitative relationship between the microstructural length scales and the various mechanical properties have been developed. Moreover, the effect of the presence of hard and brittle TiB has also been studied.
2010-07-01
Material-induced shunts in multicrystalline silicon solar cells
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-15
Material-induced shunts in multicrystalline silicon solar cells
International Nuclear Information System (INIS)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-01
Material-induced shunts in multicrystalline silicon solar cells
British Library Electronic Table of Contents (United Kingdom)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-01-01
International Nuclear Information System (INIS)
Scanning thermal microscopy (SThM) was used to map thermal conductivity images in an ultrafine-grained copper surface layer produced by surface mechanical attrition treatment (SMAT). It is found that the deformed surface layer shows different thermal conductivities that strongly depend on the grain size of the microstructure: the thermal conductivity of the nanostructured surface layer decreases obviously when compared with that of the coarse-grained matrix of the sample. The role of the grain boundaries in thermal conduction is analyzed in correlation with the heat conduction mechanism in pure metal. A theoretical approach, based on this investigation, was used to calculate the heat flow from the probe tip to the sample and then estimate the thermal conductivities at different scanning positions. Experimental results and theoretical calculation demonstrate that SThM can be used as a tool for the thermal property and microstructural analysis of ...
2006-06-15
High temperature deformation behaviour of Ti-10V Alloy and associated activation energy
International Nuclear Information System (INIS)
High temperature deformation behaviour of an experimental Beta-titanium alloy Ti-10V has been studied in the temperature range 800 to 945 degree C by using the method of crosshead speed cycling. Although subgrain formation was observed but the alloy did not exhibit superplastic behaviour in the entire temperature range studied. A very large initial grain size and elongation of grains during the deformation are considered the main factors responsible for absence of superplastic behaviour. The activation energy values for regions II and III of the ln sigma vs. ln small epsilon plots are close to the lower of the two activation energy values proposed together to describe self diffusion in beta-phase suggesting that the rate controlling mechanism is that for lattice diffusion rather then grain boundary diffusion. (author)
2004-06-01
Helium-assisted cavity formation in ion-irradiated ceramics
International Nuclear Information System (INIS)
Polycrystalline specimens of spinel (MgAl_2O_4) and alumina (Al_2O_3) were irradiated at room temperature and 650deg C with either dual- or triple-ion beams in order to investigate the effects of simultaneous displacement damage and helium implantation on cavity formation. The cavities in alumina were aligned along the direction of the c-axis, with diameters ranging from < 2 to 10 nm. The cavities in spinel were preferentially associated with dislocation loops and were of similar size as the cavities in alumina. Catastrophic amounts of cavitation were observed at the grain boundaries in spinel when the displacement damage level exceeded a critical value (#approx =# 20 dpa) in the presence of a fusion-relevant (#approx =# 60 appm/dpa) helium environment. (orig.).
1989-12-04
International Nuclear Information System (INIS)
Up to 90% of the life time of cyclically loaded components is determined by short crack initiation and propagation. This stage of the fatigue damage process is strongly influenced by microstructural features, e.g. grain boundaries and crystallographic grain orientation. Therefore LEFM can not be applied in a reasonable manner explaining the demand for a mechanism-related modelling method. The present study deals with mechanical testing and microstructural examinations applied to the relatively new #beta#-titanium alloy LCB. The results are used as data base to develop a new short crack model that is based on the model of Navarro and de los Rios. By using various techniques such as electron back-scattered diffraction and finite-element calculations the origin of crack initiation is revealed and the characteristics of crack propagation is determined. (orig.)
2000-02-24
Embryo-damage induced nucleation of microcracks in an aluminum alloy under impact loading
Energy Technology Data Exchange (ETDEWEB)
The nucleation of microdamage under dynamic loading was investigated through planar impact experiments accomplished with a light gas gun. The microscopic observation of recovered and sectioned specimens showed that microcracks were nucleated only by cracking of brittle particles inside material. However, for comparison the in situ static tensile tests on the same material conducted with a scanning electron microscope showed that the microcracks were nucleated by many forms those were fracture of ductile matrix, debonding particles from matrix and cracking of brittle particles. The quantitative metallographic observations of the specimens subjected to impact loading showed that most of the cracked particles were situated on grain boundaries of the aluminum matrix. These facts suggested the concept of critical size and incubation time of submicroscopic cavities in the dynamic case and the mechanism of embryo-damage induced nucleation by fracture ...
1995-06-01
Effect of intergranular glass on phase relation of Nd-#alpha#-sialon
International Nuclear Information System (INIS)
Quantitative analytical electron microscopy study of dopant distribution in the microstructure of selected Nd-#alpha#-sialon samples revealed the presence of relatively large amounts of glassy phase at quadruple pockets, which exhibited a common composition similar to a melilite solution. Al segregants were depleted from adjacent grain boundaries to satisfy the 'stoichiometry' of such glass. Existence of this glass results in significant deviation of the Nd-#alpha#-sialon composition from the expected values, which shifts the #alpha#-#beta#-sialon phase boundary. Only extra Nd_2O_3 additives enable a monolithic #alpha#-sialon microstructure. The absence of similar glass in Yb-#alpha#-sialon materials keeps the phase relations from such deviations.
2006-04-01
Energy Technology Data Exchange (ETDEWEB)
To clarify the effect of electrostimulated deformation on the fine structure and mechanical properties of polycrystalline molybdenum the experiments on the flattening of wire 0.8 mm in diameter into a strip 0.4 mm thick and its further rolling to 0.1 mm thickness using the electric current of high density in the deformation zone and without it, are carried out. As a result of the electric current use the strip density has increased by more than 20%, the same plasticity being preserved. The changes above are explained by the transformations in the fine structure of the deformed metal, which are manifested in more uniform distribution of dislocations and impurities in the grain boundaries in wide angles of the disoriented subgrains.
1981-01-01
International Nuclear Information System (INIS)
In this study, effects of alloying elements such as Mo, Cr and Ni on intergranular corrosion (IGC) resistance of Mo contained austenitic stainless steels in boiling 65% nitric acid solution (Huey Test) were studied. Obtained results are as follows; (1) Mo deteriorates IGC resistance of austenitic stainless steel in Huey test due to enhance precipitation of Laves ((Fe, Cr)_2Mo) phase at grain boundary. (2) Cr improves IGC resistance of Mo contained austenitic stainless steel in Huey test, which is considered to reduce dissolution rate of Laves phase into nitric acid solution by increasing Cr content in Laves phase as increasing Cr content of stainless steel. (3) Ni suppresses occurrence of IGC of Mo contained austenitic stainless steel in Huey test. (author).
1995-01-01
Effect of Gallium Focused Ion Beam Milling on Preparation of Aluminum Thin Foils
Energy Technology Data Exchange (ETDEWEB)
Focus Ion Beam (FIB) milling has greatly extended the utility of atom probe and TEM because it enables sample preparation with a level of dimensional control never before possible. Using FIB it is possible to extract the samples from desired and very specific locations. The artifacts associated with this sample preparation method must also be fully understood. In this work issues specifically relevant to the FIB milling of aluminum alloys are presented. After using the FIB as a sample preparation technique it is evident that gallium will concentrate in three areas of the sample: on the surface, on grain boundaries and at interphase boundaries. This work also shows that low energy Ar ion nanomilling is potentially quite effective for removing gallium implantation layers and gallium from the internal surfaces of aluminum thin foils.
2010-03-01
Crystallisation of grain boundary phases in silicon nitride and sialon ceramics
International Nuclear Information System (INIS)
A survey is presented of the principles and practice of tailoring sintering liquid composition and processing cycle to enable crystallisation of intergranular phases in silicon nitride and sialon ceramics. Critical features in sialon ceramics are the O/N balance in residual glasses and post-sintering heat-treatment temperatures to enable nucleation of either intermediate phases at constant composition or oxide phases with re-partitioning of non stoichiometric components in #beta#' or #alpha#' solid solutions. Crystallisation of disilicate phases in non-sialon compositions exemplifies a problem in control of polymorphs with differing atomic volumes. Crystallisation of intergranular phases has an influence mainly on high-temperature mechanical and environmental behaviour of these ceramics. (orig.).
1993-10-04
Creep performance and microstructure of the iron alloy Alloy 800 HT
International Nuclear Information System (INIS)
The examination of the high-temperature properties of the alloy Alloy 800HT has shown that both the creep performance and the microstructure of the material can be purposefully set by the initial heat treatment. At the high temperatures applied, (700-900 C), a rapid softening process sets in induced by carbide precipitation, stabilization, and coarsening. This softening process causes creep velocities strongly accelerating as a function of duration of the heat treatment prior to the creep test. The identified cause of the softening effect is a change in particle size that could be verified by SEM and TEM. It is shown that two different carbide precipitate size classes are responsible for the softening effect. While the precipitates dectable by TEM become effective primarily via interactions with dislocations, the carbide precipitates detectable only by SEM contribute to a hardening of the grain boundaries and the matrix.(orig./CB)
1997-11-28
Chemically produced nanostructured ODS-lanthanum oxide-tungsten composites sintered by spark plasma
British Library Electronic Table of Contents (United Kingdom)
High purity W and W-0.9La2O3 (wt.%) nanopowders were produced by a wet chemical route. The precursor was prepared by the reaction of ammonium paratungstate (APT) with lanthanum salt in aqueous solutions. High resolution electron microscopy investigations revealed that the tungstate particles were coated with oxide precipitates. The precursor powder was reduced to tungsten metal with dispersed lanthanum oxide. Powders were consolidated by spark plasma sintering (SPS) at 1300 and 1400degreeC to suppress grain growth during sintering. The final grain size relates to the SPS conditions, i.e. temperature and heating rate, regardless of the starting powder particle size. Scanning electron microscopy revealed that oxide phases were mainly accumulated at grain boundaries while the tungsten matrix ...
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
The Jaduguda U (?Cu?Fe) deposit in the Singhbhum shear zone has been the most productive uranium deposit in India. Pyrite occurs as disseminated grains or in sulphide stringers and veins in the ore zone. Veins, both concordant and discordant to the pervasive foliation, are mineralogically either simple comprising pyrite ? chalcopyrite or complex comprising pyrite + chalcopyrite + pentlandite + millerite. Nickel-sulphide minerals, though fairly common in concordant veins, are very rare in the discordant veins. Pyrite in Ni-sulphide association is commonly replaced by pentlandite at the grain boundary or along micro-cracks. Based on concentrations of Co and Ni, pyrite is classified as: type-A ? high Co (up to 30800?ppm), no/low Ni; type-B ? moderate Co (up to 16500?ppm) and moderate to high ...
2011-01-01
Cavitation erosion of advanced ceramics in water
Energy Technology Data Exchange (ETDEWEB)
The performance of advanced ceramics under cavitation loading in distilled water was studied by using a laboratory test with vibration-induced cavitation following the pattern of the ASTM standard G32-92. The hardened and tempered martensitic steel 100Cr6 was used as a reference. The aim was to identify mechanisms and the effects of important microstructural parameters on damage of polished Al{sub 2}O{sub 3}, Al{sub 2}O{sub 3}-ZrO{sub 2}, ZrO{sub 2} and SiC ceramics. Results showed that surface damage of brittle ceramics was mainly dominated by intergranular fracture, followed by detachment of single grains or fragments of them. Both incubation time and erosion rate were affected by the amount of initial surface cavities, grain sizes and secondary phases at grain boundaries. (orig.)
2006-10-15
Brown diamonds from an eclogite xenolith from Udachnaya kimberlite, Yakutia, Russia
British Library Electronic Table of Contents (United Kingdom)
Abstract: We have performed petrographic and spectroscopic studies of brown diamonds from an eclogite xenolith from the Udachnaya pipe (Yakutia, Russia). Brown diamonds are randomly intermixed with colorless ones in the rock and often located at the grain boundaries of clinopyroxene and garnet. Brown diamonds can be characterized by a set of defects (H4, N2D and a line at 490.7nm) which are absent in colorless diamonds. This set of defects is typical for plastically deformed diamonds and indicates that diamonds were likely annealed for a relatively short period after deformation had occurred. Excitation of brown colored zones with a 632.8nm He-Ne laser produced the typical diamond band plus two additional bands at 1730cm^-^1 and 3350cm^-^1. These spectral features are not genuine Raman ban...
2011-01-01
Anomalous activity of nonbasal dislocations in AZ31 Mg alloys at room temperature
Energy Technology Data Exchange (ETDEWEB)
AZ31 Mg alloy samples were extruded by an equal channel angular extrusion (ECAE) process and subsequently annealed to obtain fine-grained material with a low dislocation density. Tensile tests at room temperature exhibited an apparent steady-state deformation region and a large tensile elongation of 47%. The deformed microstructure at an elongation of 2% indicated a substantial cross-slip to nonbasal planes possibly induced by grain-boundary compatibility effects. The nonbasal segments of dislocations were found to consist of 40% of the total dislocation density at a yield anisotropy factor of only 1.1 instead of an expected value of 100 from single-crystal experiments. (orig.)
2003-07-01
A micro-alloyed ferritic steel strengthened by nanoscale precipitates
British Library Electronic Table of Contents (United Kingdom)
A ferritic steel with finely dispersed precipitates was investigated to reveal the fundamental strengthening mechanisms. The steel has a yield strength of 760MPa, approximately three times higher than that of conventional Ti-bearing high strength hot-rolled sheet steels, and its ultimate tensile strength reaches 850MPa with an elongation-to-failure value of 18%. Using energy dispersive X-ray spectroscopy (EDXS) and transmission electron microscope (TEM), fine carbides TiC with an average diameter of 10nm were observed in the ferrite matrix of the 0.08%Ti steel, and some cubic M23C6 precipitates were also observed at the grain boundaries and the interior of the grains. The finely dispersed TiC precipitates in the matrix provide matrix strengthening. The estimated magnitude of precipitation ...
2011-01-01
TEM characterization of Al/Al{sub 2}O{sub 3} composite fabricated by reactive metal infiltration
Energy Technology Data Exchange (ETDEWEB)
The microstructure of Al/{alpha}-Al{sub 2}0{sub 3} composites made by infiltrating Al into dense mullite preforms has been characterized using transmission electron microscopy. Observations revealed that the formation of the Al/Al{sub 2}0{sub 3} composites involves three stages. Initially, Al infiltrates into a dense mullite preform through grain boundary diffusion, and reacts with mullite at grain boundaries to form a partial reaction zone. Then, a complete reaction takes place in the reaction region between the partial reaction zone and the full reaction zone to convert the dense mullite preform to a composite of {alpha}-Al{sub 2}0{sub 3} (matrix) and an Al-Si phase (thin channels). Finally, the reduced Si from the reaction diffuses out of the Al/Al{sub 2}0{sub 3} composite through the metal channels, whereas Al from the molten Al pool is continuously drawn to the reaction region until the mullite ...
1994-12-31
International Nuclear Information System (INIS)
Post-irradiation annealing was used to help identify the role of radiation-induced segregation (RIS) in irradiation-assisted stress corrosion cracking (IASCC) by preferentially removing dislocation loop damage from proton-irradiated austenitic stainless steels while leaving the RIS of major and minor alloying elements largely unchanged. The goal of this study is to better understand the underlying mechanisms of IASCC. Simulations of post-irradiation annealing of RIS and dislocation loop microstructure predicted that dislocation loops would be removed preferentially over RIS due to both thermodynamic and kinetic considerations. To verify the simulation predictions, a series of post-irradiation annealing experiments were performed. Both a high purity 304L (HP-304L) and a commercial purity 304 (CP-304) stainless steel alloy were irradiated with 3.2 MeV protons at 360 deg. C to doses of 1.0 and 2.5 dpa. Following irradiation, post-irradiation anneals were performed at temperatures ranging ...
2002-04-01
Irradiation-assisted stress corrosion cracking in HTH Alloy X-750 and Alloy 625
International Nuclear Information System (INIS)
In-reactor testing of bolt-loaded compact tension specimens was performed in 360 C water to determine the irradiation-assisted stress corrosion cracking (IASCC) behavior of HTH Alloy X-750 and direct-aged Alloy 625. New data confirm previous results showing that high irradiation levels reduce SCC resistance in Alloy X-750. Heat-to-heat variability correlates with boron content, with low boron heats showing improved IASCC properties. Alloy 625 is resistant to IASCC, as no cracking was observed in any Alloy 625 specimens. Microstructural, microchemical and deformation studies were performed to characterize the mechanisms responsible for IASCC in Alloy X-750 and the lack of an effect in Alloy 625. The mechanisms under investigation are: boron transmutation effects, radiation-induced changes in microstructure and deformation characteristics, and radiation-induced segregation. Irradiation of Alloy X-750 caused significant strengthening and ductility loss that was associated with the ...
1995-08-06
International Nuclear Information System (INIS)
Uniform and transparent thin films of Zn_1_-_xCo_xO (0 #=# 0.035, CoO (cubic) was detected as the secondary phase. Influence of Co addition on the volume fraction of grain boundaries has been interpreted. Increase in Co content in the range 0 #<=# x #<=# 0.10 led to quenching of near-band edge and blue emissions, decrease in band gap energy (E_g) from 3.36 eV to 3.26 eV, decrease in film thickness and refractive index and an increase in extinction coefficient of Zn_1_-_xCo_xO thin films. The change in nature of stress from compressive to tensile with lower to higher doping of Co is corroborative with the angular peak shift of (002) plane of ZnO lattice. An overall increase in microhardness of Zn_1_-_xCo_xO thin films up to x = 0.05 is attributed to change in microstructure and evolution of secondary phase and as the secondary phase separates out the overall stress is released leading to lowering of hardness after this concentration. ...
2010-07-01
Effects of composition, heat treatment and cold work on structure and properties of alloy 800
Energy Technology Data Exchange (ETDEWEB)
The creep characteristics of alloy 800 at temperatures around 600/sup 0/C are greatly affected by the composition and treatments in the final stages of manufacture. Short-term and creep properties of alloy 800 at 600/sup 0/C are described for six melts covering the carbon range 0.054-0.078%, the titanium range 0.23-0.57% and the aluminium range 0.17-0.52%. The properties are related to the alloy chemistry and the microstructure. It is shown that homogeneously nucleated ..gamma..'-precipitates are the main cause of low ductility in alloy 800 but there is also some influence of, for instance, grain boundary M/sub 23/C/sub 6/ films and discontinuous precipitation of Ni/sub 3/Ti or M/sub 23/C/sub 6/ in grain boundaries. The extent of ..gamma..'-precipitation is controlled primarily by the (Ti+Al)-content. To avoid ..gamma..' and ensure a high creep ductility the (Ti+Al)-content ...
1982-04-01
Effects of composition, heat treatment and cold work on structure and properties of alloy 800
International Nuclear Information System (INIS)
The creep characteristics of alloy 800 at temperatures around 600"0C are greatly affected by the composition and treatments in the final stages of manufacture. Short-term and creep properties of alloy 800 at 600"0C are described for six melts covering the carbon range 0.054-0.078%, the titanium range 0.23-0.57% and the aluminium range 0.17-0.52%. The properties are related to the alloy chemistry and the microstructure. It is shown that homogeneously nucleated #gamma#'-precipitates are the main cause of low ductility in alloy 800 but there is also some influence of, for instance, grain boundary M_2_3C_6 films and discontinuous precipitation of Ni_3Ti or M_2_3C_6 in grain boundaries. The extent of #gamma#'-precipitation is controlled primarily by the (Ti+Al)-content. To avoid #gamma#' and ensure a high creep ductility the (Ti+Al)-content should be limited to 0.70-0.75% for alloy 800 with a carbon content ...
International Nuclear Information System (INIS)
Focused ion beam (FIB) microscopes have become well-established in the semiconductor industry during the past decade, and are rapidly gaining attention in the field of materials science, both as a tool for producing site specific, parallel sided transmission electron microscope (TEM) specimens and as stand alone specimen preparation and imaging systems. FIB secondary electron imaging (SEI) of nickel-based alloys, such as commercially produced Alloy 600 (approximately Ni 15Cr 10Fe 0.5C), has been demonstrated to show a high degree of sensitivity to the presence of deformation in the alloy, and FIB secondary ion imaging (SII) is particularly useful for identifying the presence of grain boundary corrosion, as secondary ion yields from metallic specimens can increase by three orders of magnitude in the presence of oxygen. This 'oxygen enhanced yield', makes FIB SII ideal for detection of corrosion at grain ...
2002-09-23
Prenatal diagnosis of junctional epidermolysis bullosa associated with pyloric atresia.
UK PubMed Central (United Kingdom)
Prenatal diagnosis of junctional epidermolysis bullosa associated with pyloric atresia was carried out in a couple at risk. Their two previous children had died during the first months of life of the...Full Text Available
1990-04-01
UK PubMed Central (United Kingdom)
Single-channel currents from acetylcholine receptor channels of garter snake neuromuscular junctions were recorded using the patch-clamp technique. Low concentrations of acetylcholine or carbamylcholine...Full Text Available
1982-09-01
Optical Processing and Control
... the application of an acousto- optical tunable filter ... Couplers for Large Switch-Array Applications ... Symmetric Integrated Optic X Junction," Electronics ...
1994-01-01
International Nuclear Information System (INIS)
In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)
Impact of lateral junction on selective emitter solar cell performance
Energy Technology Data Exchange (ETDEWEB)
Investigation of selective emitter solar cells has been undertaken using both device fabrication and accurate two-dimensional simulation program. Our results show that selective emitter solar cells exhibit a relatively low fill factor because of minority carriers crowding at the lateral junction. It is also found that carrier recombination in the space-charge region of the lateral junction limits open-circuit voltage improvements
1998-09-14
Energy Technology Data Exchange (ETDEWEB)
The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).
1991-05-01
International Nuclear Information System (INIS)
We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.
2005-08-01
Noise in Josephson mm-wave mixers
International Nuclear Information System (INIS)
Point contact Josephson junctions can function as millimeter wave heterodyne mixers with conversion gain. The best results achieved thus far show a single sideband conversion gain of 1.3 and a mixer contribution to the system noise temperature of 54"0K. Both of these results are approximately 5 times better than the best published figures for cooled Schottky barrier diode mixers operated at the same frequency. The measured noise for a variety of junctions can be expressed as a universal function of the normalized rf frequency #OMEGA# = h#omega#/2eI/sub c/R. It is about a factor 2 larger than the calculated noise arising from the thermal noise in the junction shunt resistance, R. The noise calculation was done for the resistively shunted junction model using an analog junction simulator.
1974-09-30
Fabrication of shuttle-junctions for nanomechanical transfer of electrons
International Nuclear Information System (INIS)
We report on the fabrication of nanomechanical devices for shuttling of electrons from one electrode to another. Each device consists of a 20 nm diameter gold nanoparticle embedded within the gap between two gold electrodes. In two different kinds of shuttle-junctions the nanoparticle is attached to the electrodes through either (i) a single layer of 1,8-octanedithiol or (ii) a multilayer of 1-octanethiol molecules. The thiol layers play the role of 'damped springs', such that when a sufficient voltage bias is applied to the junction, the nanoparticle is expected to start oscillating and thereby transferring electrons from one electrode to the other. For both kinds of shuttle-junctions we observed an abrupt increase in the transmitted current above a threshold voltage, which can be attributed to a transition from the stationary to the oscillating regime. The threshold voltage was found to be lower for single-layer ...
2009-12-02
Single Cooper-pair tunneling junctions using high-{Tc} superconducting materials
Energy Technology Data Exchange (ETDEWEB)
The authors introduce the single electron (Cooper-pair) tunneling junctions using c-axis Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+d} (Bi-2212) superconducting single crystal whiskers. Focused-ion-beam (FIB) etching patterned the Bi-2212 whiskers. The fabricated small stacked junctions have in-plane area S smaller than <1 {micro}m{sup 2}. The junctions showed the current-voltage (I-V) characteristics with the periodic structure of current peaks. The stacking layered structure of Bi-2212 works as multi-junctions array which decrease the effective capacitance, C{sub {Sigma}} = C{sub 0}/N, where C{sub 0} is the capacitance of junction and N is the layer number of elementary junctions. The period of current peaks of I-V curves corresponds to the charging energy of the single Cooper pair, 2Ec (=e{sup 2}/C{sub {Sigma}}).
1999-09-01
Energy Technology Data Exchange (ETDEWEB)
Stress corrosion cracking tests in constant extension rate tensile (CERT) and constant load tensile (CLT) tests were conducted on Ni-xCr- 9Fe-yC in Ar, water, and a LiOH-boric acid solution. Cr and C improve the resistance of Ni-base alloys to IG cracking in both Ar and water at 360C. Since creep plays a role in IG cracking, one possible explanation for the role of the environment involves its effect on the creep. Experiments were conducted on the role of C in the deformation behavior and failure mode of Ni-16Cr-9Fe. Constant load experiments were conducted on Ni-16Cr-9Fe to determine if the CLT test is more aggressive than CERT. The electron backscattering technique in a SEM is being developed in order to extend the IG cracking studies to grain sizes typical of commercial alloys, 20-30 microns.
1992-07-01
Energy Technology Data Exchange (ETDEWEB)
Stress corrosion cracking tests in constant extension rate tensile (CERT) and constant load tensile (CLT) tests were conducted on Ni-xCr- 9Fe-yC in Ar, water, and a LiOH-boric acid solution. Cr and C improve the resistance of Ni-base alloys to IG cracking in both Ar and water at 360C. Since creep plays a role in IG cracking, one possible explanation for the role of the environment involves its effect on the creep. Experiments were conducted on the role of C in the deformation behavior and failure mode of Ni-16Cr-9Fe. Constant load experiments were conducted on Ni-16Cr-9Fe to determine if the CLT test is more aggressive than CERT. The electron backscattering technique in a SEM is being developed in order to extend the IG cracking studies to grain sizes typical of commercial alloys, 20-30 microns.
1992-07-01
The influence of prior ageing on creep damage development in two variants of Alloy 800
Energy Technology Data Exchange (ETDEWEB)
The influence of high temperature thermal ageing treatments on the development of intercrystalline creep damage in two variants of Alloy 800 has been investigated. Ageing up to 3000 h and creep testing were carried out at 800 and 900 C. The high temperature behaviour of the 800HT variant is discussed with reference to the effect of heat treatments on the microstructure. The metallographic methods by which the creep damage was quantitatively determined are described. The growth rate of intercrystalline microcracks was described using a statistical model and the dependence of crack growth rate on the thermal history for both 800HT and 800H was determined. The carbide precipitation and growth processes were determined as functions of the exposure temperature and duration. The results showed the three characteristic stages, precipitation, growth and coarsening (Ostwald ripening). The largest increase in the intergranular creep damage was found in Alloy 800HT within the first 1000 h, in ...
1997-06-01
Superplastic deformation of nitrogen-rich Ca-#alpha#-sialon ceramics
International Nuclear Information System (INIS)
Nitrogen-rich Ca-#alpha#-sialon ceramics, prepared with CaH_2 as one of the starting powders, were compressively deformed in spark plasma sintering equipment. Compared with the oxygen-rich Ca-#alpha#-sialons, increasing onset deformation temperatures (about 150 K higher) were observed for nitrogen-rich Ca-#alpha#-sialons deformed at a rate of 2 x 10"-"3 s"-"1. High hardness (H_V_1_0 = 18-20 GPa) and toughness (K_I_C = 4-7 MPa m"1"/"2) were maintained after the deformation. Anisotropic grain growth was found to take place during deformation, resulting in anisotropic microstructures, containing coarse and elongated grains. The observed differences in deformation behaviour and properties between nitrogen-rich and oxygen-rich Ca-#alpha#-sialons are, as indicated by transmission electron microscopy and electron energy loss spectroscopy analysis, attributed to the presence of reduced amounts of a nitrogen-rich grain-boundary glass phase.
2008-02-25
SIMS study of compositional changes observed in a PuO_2 heat source cladding alloy
International Nuclear Information System (INIS)
Secondary ion mass spectrometry (SIMS) has been used to investigate changes that occur in an advanced Ir-0.3W alloy during high temperature aging. This alloy is used to clad "2"3"8PuO_2 heat sources used in thermoelectric generators for deep space reconnaissance satellites. Long-term direct contact with PuO_2 at 1400"0C leads to physical and chemical changes within the cladding alloy that affect its metallurgical properties. SIMS was used to show that Cr, Fe, Ni, and in some cases O, diffuse from the PuO_2 into the alloy. Thorium and aluminum diffuse out of the alloy in these same regions. This SIMS study suggests that inward O diffusion and subsequent formation of ThO_2 on grain boundaries may stabilize the alloy against enhanced grain growth.
1983-10-11
SIMS study of compositional changes observed in a PuO/sub 2/ heat source cladding alloy
Energy Technology Data Exchange (ETDEWEB)
Secondary ion mass spectrometry (SIMS) has been used to investigate changes that occur in an advanced Ir-0.3W alloy during high temperature aging. This alloy is used to clad /sup 238/PuO/sub 2/ heat sources used in thermoelectric generators for deep space reconnaissance satellites. Long-term direct contact with PuO/sub 2/ at 1400/sup 0/C leads to physical and chemical changes within the cladding alloy that affect its metallurgical properties. SIMS was used to show that Cr, Fe, Ni, and in some cases O, diffuse from the PuO/sub 2/ into the alloy. Thorium and aluminum diffuse out of the alloy in these same regions. This SIMS study suggests that inward O diffusion and subsequent formation of ThO/sub 2/ on grain boundaries may stabilize the alloy against enhanced grain growth.
1983-01-01
Research on deformation characteristic of AZ31Mg alloy and its constitutive equations
Energy Technology Data Exchange (ETDEWEB)
Superplasticity of polycrystalline metallic materials is a phenomenon which shows hundreds to thousands of percents of large plastic deformation without necking in a steady state of low stress, when the uni-axial tensile loading is done in some special thermo-mechanical conditions (some limited ranges of properly high temperature and low strain rate). The main mechanism of superplastic phenomenon is the grain boundary sliding, while the main mechanism of usual plastic deformation is the trans-granular sliding. In this research, the possibility of superplastic deformation in a magnesium alloy (AZ31Mg alloy) was experimentally investigated, because generally speaking, the magnesium alloy whose atomic structure is hexagonal does not have enough formability in a form of trans-granular sliding mechanism. In this paper, the detail of experimental results are shown and discussed. Moreover, the constitutive equations of Mg alloy are proposed on the ...
2004-07-01
Radiation-induced segregation in light-ion bombarded Ni-8% Si
Energy Technology Data Exchange (ETDEWEB)
Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared ...
1986-01-01
Energy Technology Data Exchange (ETDEWEB)
The bullet evidence in the JFK assassination investigation was reexamined from metallurgical and statistical standpoints. The questioned specimens are comprised of soft lead, possibly from full-metal-jacketed Mannlicher-Carcano, 6.5-mm ammunition. During lead refining, contaminant elements are removed to specified levels for a desired alloy or composition. Microsegregation of trace and minor elements during lead casting and processing can account for the experimental variabilities measured in various evidentiary and comparison samples by laboratory analysts. Thus, elevated concentrations of antimony and copper at crystallographic grain boundaries, the widely varying sizes of grains in Mannlicher-Carcano bullet lead, and the 5-60 mg bullet samples analyzed for assassination intelligence effectively resulted in operational sampling error for the analyses. This deficiency was not considered in the original data interpretation and resulted in an ...
2006-08-29
Preparation of ZrO_2/O'-sialon composites using dissociation of zircon
International Nuclear Information System (INIS)
ZrO_2/O'-sialon composites were obtained via reaction sintering of ZrSiO_4 and Si_3N_4 powders at about 1700 deg C. Y_2O_3 was effective in both stabilizing of zirconia and densifying the composites. However, it is not easy to select an optimum value of the single additive to balance these two requirements simultaneously. With low Y_2O_3 addition, some tetragonal zirconia grains in the sintered samples are transformable during mechanical grinding but the full densification of the material is then sacrificed. On the other hand, addition more Y_2O_3 to achieve complete densification results in the zirconia being stabilized into undesirable t' or cubic forms. Therefore no improved toughening effects have been achieved in the composites. Heat-treatment of the materials at 1400 deg C. results in the diffusion of yttria from the grain boundary phase to zirconia and the formation of the O'-cubic zirconia composite may still provide a useful refractory ...
Preparation and properties of #alpha#"' and #alpha#"'+ #beta#"' sialon ceramics
International Nuclear Information System (INIS)
The densification of #alpha#"1-and #alpha#"+#beta#"1-sialon ceramics has been studied by means of in situ dilatometry. It is seen that the densification is greatly affected by the reaction sequences and the grain growth. The formation and densification of sialons start simultaneously as the dissolution of nitrides into the oxide eutectic liquid phase occurs. The formation of sialons is complete at 1800 deg C., while full densification can only be obtained by using gas pressure sintering. The typical microstructure of both #alpha#"'-and mixed #alpha#'+#beta#'-sialon ceramics consists of a crystalline phase of sialons and a small fraction of amorphous phase at grain boundaries. Vickers hardness (HV0.5) was measured by using the indentation technique, and the biaxial bending strength (#sigma#_b_i) was determined with the 'ball-on-ring' test. Fracture toughness was determined by using both the indentation and single-edged notched beam techniques. ...
Energy Technology Data Exchange (ETDEWEB)
Pitting behavior of alloy 800 was investigated as a function of temperature and prefilming in high-temperature water. The behavior was characterized in terms of pitting potential (U{sub p}) and pit density (n{sub p}). U{sub p} decreased with increasing temperature and chloride activity. Prefilming of test coupons over a period between 100 h and 5,000 h in ammoniated water at 300 C had no apparent influence on U{sub p} at room temperature, 180 C, and 300 C. However, the number of pits in prefilmed coupons was much higher than in coupons covered with an air passive layer. The effect of prefilming on pit nucleation was investigated in detail with regard to a model and test methods developed by Bianchi, et al. Density of pits in prefilmed coupons was at least 1 order of magnitude higher than in air passive coupons. Maximum pit density was measured after a prefilming period of 100 h. The effect was discussed in terms of Bianchi`s model and in terms of features of passive films. The ...
1997-02-01
Energy Technology Data Exchange (ETDEWEB)
The pitting behavior of Alloy 800 was investigated as a function of temperature and prefilming in high temperature water. The pitting behavior was characterized in terms of the pitting potential and the pit density. The pitting potential decreases with increasing temperature and chloride activity. Prefilming of test coupons over a time period between 100 and 5,000 hours in ammoniated water at 300 C has no apparent influence on the pitting potential at room temperature, 180 C and 300 C. However, the number of pits in prefilmed coupons is much higher than in coupons covered with an air passive layer. The effect of prefilming on pit nucleation was investigated in more detail with regard to a model and test methods developed by Bianchi and co-workers. Density of pits in prefilmed coupons is at least one order of magnitude higher than in air passive coupons. Maximum pit density was measured after a prefilming period of 1 00 hours. The effect is discussed in terms of Bianchi`s model and in ...
1995-12-31
Observation of high permittivity in Ho substituted BaZr_0_._1Ti_0_._9O_3 ceramics
International Nuclear Information System (INIS)
The authors observed an extremely high permittivity (#approx#35 000 at T_C) in barium zirconate titanate (BaZr_0_._1Ti_0_._9O_3) ceramics with holmium substitution (1-5 mol %) in Ba site. Careful microstructural investigation and energy dispersive spectroscopy analysis of the 1-2 mol % of Ho substituted ceramics showed the enrichment of a Ho-phase along the grain boundaries with a composition close to the Ho_2Ti_2O_7 pyrochlore. The formation of Ho rich phase resulted in the Maxwell-Wagner polarization mechanism, which leads to this unusually high permittivity. Ceramics with 3 mol % or higher Ho content showed lesser permittivity values compared to 1-2 mol %, probably due to the increase in pyrochlore phase. These high dielectric constant ceramics are useful in nanoscale devices.
2007-07-09
Microstructure and magnetic properties of nanocrystalline Fe75Si20M5 (M = Al, B, Cr) powders
International Nuclear Information System (INIS)
Nanocrystalline Fe75Si20M5 (M = Al, B and Cr) powders were synthesized by mechanical alloying in a planetary ball mill from high purity elemental powders. Evolution of non-equilibrium solid solutions of ?-Fe[Si,(Al, B, Cr)] with a nanocrystalline structure was accompanied by the introduction of a large number of dislocation defects in the course of the milling process. Fe sites get substituted by Si and M (M = Al, B, Cr) atoms during the milling process. The structural change and the resulting disorder are reflected in the changes in the lattice parameter and average magnetic moment of the powders milled for various time periods. The effective magnetic anisotropy increases linearly with the milling time. An increase in coercivity with increasing milling time was observed which could be attributed to the introduction of dislocations and the reduction in the powder particle size during milling. The presence of dislocations and grain boundaries ...
2008-08-21
International Nuclear Information System (INIS)
Classification and ranking of the solid solution on their reaction to the irradiation is suggested on the basis of binary system structure controlled by mixing enthalpy sign, melting temperatures relation of components and solidus curves slope. Several combinations of these characteristics permit to pick out three groups of substitutional elements capable of forming the vacancy-solute atom complexes either low-mobile or fast-mobile ones as compared to monovacancies migration. The radiation hardening (and embrittlement) of binary alloys should be intensified respectively either due to heterogeneous point defect clusters nucleation on solute traps or due to solute atom clusters/ precipitate formation. A local cohesion decrease may also occur especially if low-melting elements (characterized by low surface energy) are segregating on internal sinks or grain boundaries. The predicted specifics of different alloy group under irradiation and during ...
1994-06-20
Low-energy ion-induced electron emission from gas-covered surfaces
International Nuclear Information System (INIS)
Measurements of ion-induced electron emission have been performed with helium and argon ions with energies between 300 and 900 eV on W, W with 10% Ti, Al, Al with 1% Cu, Al with 1% Si, Si, and Be. This article describes many of the important surface characteristics that influence the ion-induced electron emission. For low-energy ions, the substrate material was found to be less important as the velocity of the incident ion decreased. In the case of incident Ar"+ the substrate material had a negligible effect on the emission for this energy range. The presence of an adsorbed layer enhanced emission in all cases. Heating the substrates resulted in oxidation of the surfaces and a subsequent increase in emission. The electron emission from aluminum samples with smaller grain sizes was higher than samples of identical composition with larger grains. This effect is due to the greater number of adsorption sites resulting from the higher grain boundary ...
Lanthanum gallate and ceria composite as electrolyte for solid oxide fuel cells
International Nuclear Information System (INIS)
The composite of doped lanthanum gallate (La_0_._9Sr_0_._1Ga_0_._8Mg_0_._2O_2_._8_5, LSGM) and doped ceria (Ce_0_._8Sm_0_._2O_1_._9, CSO) was investigated as an electrolyte for solid oxide fuel cell (SOFC). The LSGM-CSO composite was examined by X-ray diffraction (XRD) and impedance spectroscopy. It was found that the sintered LSGM-CSO composite contains mainly fluorite CeO_2 phase and a minority impurity phase, Sm_3Ga_5O_1_2. The LSGM-CSO composite electrolyte shows a small grain boundary response in the impedance spectroscopy as compared to LSGM and CSO pellets. The composite electrolyte exhibits the highest conductivity in the temperature range of 250-600 "oC, compared to LSGM and CSO. The LSGM-CSO composite can be expected to be an attractive intermediate temperature electrolyte material for solid oxide fuel cells.
2010-03-04
Irradiation-assisted stress corrosion cracking of HTH Alloy X-750 and Alloy 625
International Nuclear Information System (INIS)
In-reactor testing of bolt-loaded compact tension specimens was performed in 360 C water. New data confirms previous results that high irradiation levels reduce SCC resistance in Alloy X-750. Low boron heats show improved IASCC (irradiation-assisted stress corrosion cracking). Alloy 625 is resistant to IASCC. Microstructural, microchemical, and deformation studies were carried out. Irradiation of X-750 caused significant strengthening and ductility loss associated with formation of cavities and dislocation loops. High irradiation did not cause segregation in X-750. Irradiation of 625 resulted in formation of small dislocation loops and a fine body-centered-orthorhombic phase. The strengthening due to loops and precipitates was apparently offset in 625 by partial dissolution of #gamma# precipitates. Transmutation of boron to helium at grain boundaries, coupled with matrix strengthening, is believed to be responsible for IASCC in X-750, and the ...
1995-08-06
International Nuclear Information System (INIS)
The influence of some processing factors such as cold work and heat treatment on the susceptibility to caustic stress corrosion cracking (SCC) of modified alloy 800, referred to alloy 800 M, in a boiling solution of 50%NaOH + 0.3%SiO_2+0.3%Na_2S_2O_3 was investigated by means of microstructure examination, tensile test, stress analysis, SCC test of C-rings, Auger electron spectroscopy (AES) and corrosion mode. Cold work led to lengthening of grains, decrease in ductility, increase in strength, residential stress and susceptibility to SCC. With increasing temperature of heat treatment on alloy 800 M after cold work, grains became bigger, ductility increased but strength, residential stress and susceptibility to SCC decreased. SCC cracks on C-ring specimens initiated from pitting and propagated along grain boundaries. AES analysis indicates that the surface films on alloy 800M are enriched in nickel and depleted in iron and chromium. (authors)
2005-07-01
Energy Technology Data Exchange (ETDEWEB)
Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ratio.-Si{sub 3}N{sub 4} ...
2003-07-01
Energy Technology Data Exchange (ETDEWEB)
The {beta}-Si{sub 3}N{sub 4}w/6061 Al composite was fabricated by the squeeze casting and extruded with the extrusion ratios of 44 and 100 at 773 K. Its tensile strength and superplastic characteristics were investigated and the following results were obtained: (1) the {beta}-Si{sub 3}N{sub 4}w/6061 Al composite exhibits the tensile strengths of about 400 MPa at room temperature and of about 250 MPa at 773 K; (2) the m value of the composite pulled at 818 K is 0.33 in the strain rate range from 0.02 up to 1.0 s{sup {minus}1}; (3) the total elongation of the composite becomes about 173 % at the strain rate of 0.02 s{sup {minus}1} even in the case of the high volume fraction of 0.25; (4) no reaction product on the surface of {beta}-Si{sub 3}N{sub 4} whisker after removing a matrix by etching was detected except AlN; (5) the fracture surface of the composite includes the melt matrix and small filaments, which shows that interfacial sliding should promote HSRS in addition to fine ...
1995-06-01
Energy Technology Data Exchange (ETDEWEB)
The atomic structure of [001] tilt grain boundaries of {Sigma}5 (210), {Sigma}5 (310), {Sigma}13 (320) and {Sigma}17 (410) in TiO{sub 2}(rutile) were studied using high resolution electron microscopy and computer simulation. Regularly separated small steps (1/2 [120] high) and big steps (3/2 [120] high) which contain secondary dislocations were found in the (210) boundary as a result of deviation from the exact {Sigma}5 misorientation and (210) symmetric plane. Similar steps were also found in (310) and (320) boundaries. Flat segments between the steps were found to have very accurate misorientation of the {sigma}`s and a nearly symmetric boundary plane. Their rigid body translation, volume expansion and relaxed structures were determined by comparing HRTEM images with computer calculated structures and simulated images. An irregular core structure was found in the (410) boundary when its misorientation deviated 2{degree} from the exact ...
1995-09-01
Grain refinement in magnesium alloy AZ31 during hot deformation
Energy Technology Data Exchange (ETDEWEB)
The deformation behavior and structure changes of magnesium alloy AZ31 were studied in compression at temperatures ranging from 523 K to 673 K and at a strain rate of 3 x 10{sup -3} s{sup -1}. They depend sensitively on deformation temperature. At high temperatures, grain fragmentation takes place due to frequent formation of kink bands initially at corrugated grain boundaries and then in grain interiors, followed by full development of new grains in high strain. At lower temperatures, in contrast, twinning takes place in rather coarse grains and kink bands are formed mainly in finer original ones in low strain. It is concluded that new grain evolution can be controlled by a deformation-induced continuous reaction resulting in grain fragmentation by kink bands, i.e. continuous dynamic recrystallization (cDRX). The latter is discussed comparing with conventional, i.e. discontinuous, DRX. (orig.)
2004-07-01
Energy Technology Data Exchange (ETDEWEB)
For rational use of energy resources, the process technology which allows harmonization and multiplication of conflicting characteristics was developed for development of new ceramic system materials. This paper summarizes the result in fiscal 1997. On a structural reaction process among creation technologies of ultra-reliable structure, study was made on structure control and hot-working technology through atmosphere control in ceramics synthesis. On basic technology for analysis and evaluation, study was made on the effect of particle bridging on strengthening and toughening of ceramic materials. Study was also made on a toughness expression mechanism, FEM model analysis of particle bridging, and crack growth resistance of ceramics. On control of solid solution precipitation, new alumina ceramics with high strength, hardness and wear resistance was obtained by transgranularly precipitating nano-size particles from a fine-grain high-density matrix through an improved particle ...
1998-03-01
International Nuclear Information System (INIS)
The influence of heat treatments on the anodic polarization behavior of alloy 400 in acidic Na_2SO_4 solutions with different pH values and chloride contents has been studied. Alloy 400 is susceptible to intergranular corrosion (IGC) in 0.5 N Na_2SO_4 solution (pH 3) containing 0.2% CuCl_2. For the same heat treatment (soaking for one hour at 900 C), the extent of IGC appears to be significantly affected by the cooling rate, which is greater for faster cooling (e.g., water quenching). Aging the water-quenched alloy at 500 C enhances IGC susceptibility, and aging at higher temperatures imparts resistance to IGC. Note that addition of small amounts of hafnium has a beneficial effect on the resistance to IGC of alloy 400 under similar exposure conditions. An attempt has been made to rationalize the observations in terms of segregation of sulfur and phosphorus to the grain boundaries.
Energy Technology Data Exchange (ETDEWEB)
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the ...
2005-01-01
International Nuclear Information System (INIS)
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated ...
2005-01-01
International Nuclear Information System (INIS)
The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly ...
2007-09-01
Effect of minor alloying element variation on the properties of Alloy 800
International Nuclear Information System (INIS)
Application of Alloy 800 in steam generator tubing of fast reactors, where continuous service temperature of the order of 550"0C is experienced, has been analyzed with respect to small variations in its chemical composition. Several laboratory melts of Alloy 800 have been prepared and their microstructural and mechanical property changes during simple aging and creep tests at 500 to 600"0C have been studied. It has been found that in the above temperature range precipitation of M_2_3C_6 on the grain boundaries is independent of the Ti : C ratio generally specified for Alloy 800. Gamma prime precipitation occurred in alloys containing as low as 0.5 percent Ti + Al after 1000 h of aging and was accompanied with a creep ductility decline. Upon #gamma# precipitation creep rate was retarded and its reacceleration for test times up to 8500 h at 550"0C was not observed. Based on the findings, increased Ti concentration at the expense of Al within the ...
Energy Technology Data Exchange (ETDEWEB)
In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the ...
2008-03-01
Crushed Salt Constitutive Model
Energy Technology Data Exchange (ETDEWEB)
The constitutive model used to describe the deformation of crushed salt is presented in this report. Two mechanisms -- dislocation creep and grain boundary diffusional pressure solution -- are combined to form the basis for the constitutive model governing the deformation of crushed salt. The constitutive model is generalized to represent three-dimensional states of stress. Upon complete consolidation, the crushed-salt model reproduces the Multimechanism Deformation (M-D) model typically used for the Waste Isolation Pilot Plant (WIPP) host geological formation salt. New shear consolidation tests are combined with an existing database that includes hydrostatic consolidation and shear consolidation tests conducted on WIPP and southeastern New Mexico salt. Nonlinear least-squares model fitting to the database produced two sets of material parameter values for the model -- one for the shear consolidation tests and one for a combination of the shear ...
1999-02-01
A comparison of the low-cycle fatigue behavior of Alloy 800 and Alloy 800H
International Nuclear Information System (INIS)
At 650"0C, the low-cycle fatigue life was essentially the same for the two alloys on the basis of strain amplitude, but Alloy 800H had a longer life on the basis of stress amplitude. A 500"0C, Alloy 800 and 800H exhibited longer fatigue lifetime than at 650"0C, with Alloy 800 exhibiting a 2-3 times longer life than Alloy 800H when compared on the basis of plastic strain range, whereas the difference was less pronounced when compared on the basis of stress amplitude. When a creep effect was introduced either by way of a hold time or a reduced frequency, Alloy 800 exhibited a greater reduction in life than did Alloy 800H. The dislocation structure changed from planar to cellular with increase in strain range, and extensive precipitation of M_2_3C_6 was noted within the grains for Alloy 800H and along grain boundaries for both alloys. (Auth.).
Ultrashallow P{sup +}/N junction formation by plasma ion implantation
Energy Technology Data Exchange (ETDEWEB)
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of ...
2000-12-01
Ultrashallow P"+/N junction formation by plasma ion implantation
International Nuclear Information System (INIS)
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor ...
2000-12-01
Critical Currents in A-15 Superconductors
The critical currents of A-15 phase Nb(,3)Sn, V(,3)Si, Nb(,3)Ge, V(,3)Ga, and Nb-Sn with a few at.% Ga and Al(,2)O(,3) have been measured at temperatures up to T(,c) and in magnetic fields up to 8T to study fundamental flux pinning interactions as a function of defect size and density. The samples are electron beam evaporated films typically 2 (mu)m thick. Their particular usefulness for this study is that they span the clean to dirty limits and their normal state resistivity and grain size can be controlled by deposition parameters. The grain boundaries are the defects most responsible for flux pinning. The electron scattering mechanism is based on the local change in the coherence length due to increased conduction electron scattering and is chosen from among several possible mechanisms to calculate the elementary pinning force at a grain boundary. A direct summation of the elementary pinning force of ...
1982-01-01
Quantum theory of the interaction of Josephson junctions with non-classical microwaves
Energy Technology Data Exchange (ETDEWEB)
We present a study of the interaction between Josephson junctions in circular superconducting rings and non-classical microwaves, treating both quantum mechanically. A Hamiltonian that describes both inductive and capacitive coupling between the two systems is derived within the external field approximation. Other Hamiltonians which go beyond the external field approximation, and describe explicitly the interaction of the quantum circuit that produces the non-classical microwaves with the Josephson junction circuit, are also presented. A comparison between current experiments which use classical electromagnetic fields and the proposed experiments that use non-classical microwaves, is made. (orig.) With 6 figs., 32 refs.
1997-01-01
Sequence features involved in the mechanism of 3' splice junction wobbling
UK PubMed Central (United Kingdom)
BackgroundAlternative splicing is an important mechanism mediating the diversified functions of genes in multicellular organisms, and such event occurs in around 40-60% of human...Full Text Available
Energy Technology Data Exchange (ETDEWEB)
In the thermal hydraulics codes developed for fire safety analysis and for containment thermal hydraulic analysis, junctions in the multi-compartment geometries is often modeled as uni-directional junctions. However, ceiling junctions are known to depict unstable/oscillatory bi-directional flow behavior. Detailed investigations have been carried out to understand the unstable flow behaviour of a junction by analyzing an earlier reported experiment and its subsequent two dimensional numerical RANS based study of fire in an enclosure. The authors attempt more realistic and desired three dimensional and inherently transient large eddy simulations using a computer code Fire Dynamics Simulator (FDS). The paper presents the details of the analysis, the results obtained and further studies required to be conducted so that the findings can be applied to the fire/containment thermal hydraulics analysis codes ...
2011-05-15
Point-contact Andreev reflection spectroscopy of heavy-fermion-metal/superconductor junctions
Energy Technology Data Exchange (ETDEWEB)
Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn{sub 5} using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance. To explore their physical origins, we have extended our measurements to point-contact junctions between single crystalline heavy-fermion metals and superconducting Nb tips. Differential conductance spectra are taken on junctions with three heavy-fermion metals, CeCoIn{sub 5}, CeRhIn{sub 5}, and YbAl{sub 3}, each with different electron mass. In contrast with Au/CeCoIn{sub 5} junctions, Andreev signal is not reduced and no dependence on effective mass is observed. A possible explanation based on a two-fluid picture for heavy fermions is proposed.
2008-04-01
Point -contact Andreev reflection spectroscopy of heavy-fermion-metal/superconductor junctions
Energy Technology Data Exchange (ETDEWEB)
Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn{sub 5} using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance. To explore their physical origins, we have extended our measurements to point-contact junctions between single crystalline heavy-fermion metals and superconducting Nb tips. Differential conductance spectra are taken on junctions with three heavy-fermion metals, CeCoIn{sub 5}, CeRhIn{sub 5}, and YbAl{sub 3}, each with different electron mass. In contrast with Au/CeCoIn{sub 5} junctions, Andreev signal is not reduced and no dependence on effective mass is observed. A possible explanation based on a two-fluid picture for heavy fermions is proposed.
2008-01-01
Flight Research: Problems Encountered and What They Should ... - NASA
flow separation occurred at the junction of the tip fin and the fuselage. ...... Systems, presented at the AGARD Guidance and Control and Flight Mechanics ...
Development of a Transpondersonde for the Super-LOKI ...
... The three meteorological rocket systems, in order of ... IC3 and IC4 divides the incoming clock pulses f ... at the junction of the temperature sensor and R ...
1972-02-02
We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed in air under ambient conditions. From the experiments on single junctions, values for the effective barrier height and thickness were derived. For the Cr/CrO_x/Cr SET transistors we achieved minimal junction areas of 17 x 60 nm^2 using a scanning transmission electron microscope for the e-beam exposure on Si_3N_4 membrane substrate. We discuss the electrical performance of the transistor samples as well as their noise behavior.
1999-01-01
Normal-state conductance used to probe superconducting tunnel junctions for quantum computing
International Nuclear Information System (INIS)
Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, ...
2010-04-01
Low-noise Josephson mixers at 115 GHz using recyclable point contacts
International Nuclear Information System (INIS)
Thermally recyclable Nb point-contact Josephson junctions are investigated as low-noise mixers with an external local oscillator at 115 GHz. The best single sideband mixer noise temperature achieved is 140 ( +- 20) K with a (SSB) conversion loss of 2.4 ( +- 0.5) dB. Such rugged junctions are suitable for use in practical receivers and should give unprecedented sensitivity at the shorter millimeter wavelengths.
Josephson junctions as heterodyne detectors
International Nuclear Information System (INIS)
Heterodyne detection with a point-contact Josephson junction has been investigated both experimentally and theoretically. The measured performance of the device at 36 GHz is in good agreement with the theory. By operating vanadium point contacts at 1.4 K, the authors have achieved a single-sideband (SSB) mixer noise temperature of 54 K with a conversion gain of 1.35 and a signal bandwidth on the order of 1 GHz. A potentially impressive performance for these devices at submillimeter wavelengths can be extrapolated from the results.
Boron uphill diffusion during ultrashallow junction formation
International Nuclear Information System (INIS)
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
2003-05-26
Gap-junctional communication of bone marrow stromal cells is resistant to irradiation in vitro
Energy Technology Data Exchange (ETDEWEB)
Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...
1990-10-01
Gap-junctional communication of bone marrow stromal cells is resistant to irradiation in vitro
International Nuclear Information System (INIS)
Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...
Effect of oxide treatment at the microcrystalline tunnel junction of a-Si:H/a-Si:H tandem cells
Energy Technology Data Exchange (ETDEWEB)
The electrical transport taking place in the {mu}c-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO{sub 2} plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic {mu}c-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n){mu}c-Si/oxide/(p){mu}c-Si and (b) (n){mu}c-Si/(i){mu}c-Si/(p){mu}c-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) {mu}c-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel ...
2000-05-01
Comparison of Si and InSb as the normal layer of S-N-S junctions
Energy Technology Data Exchange (ETDEWEB)
This paper reports on superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with the normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB), and electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junction with InSb shows the characteristics of Josephson S-N-S junction. A 200nm-thick film of InSb deposited on MgO had a mobility of 83 cm{sup 2}.V {center dot} s and a carrier density of 6.5 {times} 10{sup 17} cm{sup {minus}3} at 4.2K. The coherence length {xi}{sub n} was computed to be 17 nm from these experimental data, and we obtained critical superconducting current Ic of 100 {mu} A for the S-N-S junction which had a line width of 10{mu} m and a channel length of 20 nm.
1991-03-01
Investigations on solar grade silicon and process engineering of advanced silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This thesis deals with the evaluation of Solar Grade Silicon (SoG-Si) purified by different techniques, and also the fabrication and characterization of high efficiency and advanced bifacial solar cells. In the beginning of Chapter 1, various SoG-Si production methods relevant for this work are qualitatively described. The three feedstock materials used in this work are from the Fluidized Bed Reactor (FBR) process, metallurgical feedstock-I and feedstock-II process. In metallurgical feedstock-I, the lifetime of the minority charge carriers in multicrystalline silicon (mc-Si) samples at the grain boundaries are found to be higher than the grains themselves possibly due to lower resistivities in the grain boundaries. The efficiency of the best solar cell obtained using the mc-Si metallurgical feedstock-I is 16.1%. It has been identified that the fast light induced degradation, whose magnitude is lower ...
2007-07-01
Two-boson algebra and quantum computing with Josephson-like systems
Energy Technology Data Exchange (ETDEWEB)
Our investigation concerns the class of Josephson-like systems, sharing the same nonlinear Hamiltonian. Among the latter a Josephson junction with an external biasing circuit is considered. We diagonalize the fully nonlinear Hamiltonian (in the superconductive regime of the junction) in the Fock space of the TBHA (two-boson Heisenberg algebra) and prove that such algebra leads quite naturally to the theoretical realization of codewords and logical operators: the codewords are defined as the even and odd coherent states of the TBHA, while the logical operators are expressed in terms of operators in the same algebra. Our theoretical construction corresponds to a continuous variable quantum computation scheme; the continuous variables are identified in terms of the physical operators of the junction. The link between this scheme and the technique of fermionization of bosonic systems is also discussed.
2005-12-01
Junction conditions in General Relativity with spin sources
The junction conditions for General Relativity in the presence of domain walls with intrinsic spin are derived in three and higher dimensions. A stress tensor and a spin current can be defined just by requiring the existence of a well defined volume element instead of an induced metric, so as to allow for generic torsion sources. In general, when the torsion is localized on the domain wall, it is necessary to relax the continuity of the tangential components of the vielbein. In fact it is found that the spin current is proportional to the jump in the vielbein and the stress-energy tensor is proportional to the jump in the spin connection. The consistency of the junction conditions implies a constraint between the direction of flow of energy and the orientation of the spin. As an application, we derive the circularly symmetric solutions for both the rotating string with tension and the spinning dust string in three dimensions. The rotating ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
The purpose of this paper is to evaluate the role of the strain-relaxation processes on the leakage current of embedded SiGe S/D junctions. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured to further investigate the relaxation degree of embedded SiGe S/D junctions in the regime where partial relaxation by misfits dislocations is assumed, yielding a reduction of the leakage current density. Further, the impact of the ion implantation-related defects on the electrical performance is discussed. The analysis is complemented with structural characterization based on High Resolution Transmission Electron Microscopy (HRTEM) and Nomarski microscopy. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2009-08-15
Triple ion-beam studies of radiation damage in 9Cr2WVTa ferritic/martensitic steel
Energy Technology Data Exchange (ETDEWEB)
To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} at 80, 200, and 350{degrees}C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200{degrees}C by triple beams, compatible with neutron irradiation data from previous work which showed about a 30 % increase in yield strength after 27.2 dpa at 365{degrees}C. However, the very large concentrations of gas bubbles in the ...
1997-11-01
The creep and intergranular cracking behavior of Ni-Cr-Fe-C alloys in 360 degree C water
International Nuclear Information System (INIS)
Mechanical testing of controlled-purity Ni-xCr-9Fe-yC alloys at 360 C revealed an environmental enhancement in IG cracking and time-dependent deformation in high purity and primary water over that exhibited in argon. Dimples on the IG facets indicate a creep void nucleation and growth failure mode. IG cracking was primarily located at the interior of the specimen and not necessarily linked to direct contact with the environment. Controlled potential CERT experiments showed increases in IG cracking as the applied potential decreased, suggesting that hydrogen is detrimental to the mechanical properties. It is proposed that the environment, through the presence of hydrogen, enhances IG cracking by enhancing the matrix dislocation mobility. This is based on observations that dislocation-controlled creep controls the IG cracking of controlled-purity Ni-xCr-9Fe-yC in argon at 360 C and grain boundary cavitation and sliding results that show the ...
1995-03-26
International Nuclear Information System (INIS)
The effects of CH_4 content at nitriding step in the low temperature two-step plasma treatment (carburizing+nitriding) on the surface characteristics of AISI304L stainless steel were investigated. The low temperature plasma carburizing was carried out at 550 .deg. C for 5h in a gas mixture of H_2 Ar and CH_4. The thickness of a carburized layer increased up to about 30 #mu#m and corrosion resistance of the layer decreased due to the precipitation formed at the grain boundary. After carburizing, a low temperature plasma nitriding was subsequently performed in the same chamber at 400 .deg. C for 15h to improve corrosion resistance and to further increase the surface hardness. The surface hardness of a N-enriched layer after nitriding reached up to 1,200HV_0_._1, which is much higher than that of as-carburized layer(750 HV_0_._1). The post nitriding process had a beneficial effect on reducing the precipitates in the C-enriched layer. The thickness ...
2007-10-01
Energy Technology Data Exchange (ETDEWEB)
Time-temperature-precipitation diagrams have been established for two steels with 6% Mo, 21% Cr, 25% Ni, 0.14 and 0.19% N (Cronifer 1925 h Mo = 1.4529, UNS N 08925) and for one steel with 6% Mo, 20% Cr, 18% Ni and 0.21% N (UNS S 31 254). The corresponding time-temperature-sensitization diagrams (in accordance to SEP 1877/II) and time-temperature-pitting diagrams (testing in 6% FeCl{sub 3} solution) have been evaluated as well. Precipitation of intermetallics occurs rapidly especially in the range between 700 and 1000{sup 0}C. In case of the 18% Ni steel and the 25% Ni/0.14% N steel grain boundaries are covered to a large extent with precipitates after only 15 min at 850 or 950{sup 0}C. In case of the 25% Ni/0.19% N steel precipitation is considerably slower. Therefore, when welding according to established rules and recommendations, no deterioration of the corrosion resistance in the heat-affected zone is to be expected. Additionally, the steel ...
1989-08-01
Pitting and intergranular corrosion resistances of nitrogen ion implanted type 304 stainless steel
International Nuclear Information System (INIS)
Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, insignificant IGC attack was noticed. The IGC resistance increased with increase in the dose for all the specimens aged at 973 K, and the reduction in the electrochemical potentiodynamic reactivation (EPR) charge value ...
1998-05-24
Energy Technology Data Exchange (ETDEWEB)
We have investigated the nanocrystalline microstructure and the hard magnetic properties of Sm(Co{sub 0.725}Fe{sub 0.1}Cu{sub 0.12}Zr{sub 0.04}B{sub 0.015}){sub 7.4} melt-spun ribbons. The coercivity (H{sub c}) of the as-spun ribbons increased with the wheel surface speed from 2.8kOe for 10m/s to 14.5kOe for 40m/s. The post-annealing of the melt-spun ribbons from 700 to 900 deg. C for 10min did not lead to a substantial increase of H{sub c}. However, after isothermal aging at 820 deg. C and subsequent slow cooling (0.5 deg. C/min) to 120 deg. C, H{sub c} increased from 2.8 to 10.9kOe for 10m/s, while it decreased from 14.5 to 13.5kOe for 40m/s ribbons. The grain size of the melt-spun ribbon reduced with structural transformation from 2:17H (Th{sub 2}Ni{sub 17}-hexagonal type) to 1:7H (TbCu{sub 7}-hexagonal type) as the wheel surface speed was increased. Three-dimensional atom probe analysis showed a boron enriched precipitate at the grain ...
2005-08-15
International Nuclear Information System (INIS)
We have investigated the nanocrystalline microstructure and the hard magnetic properties of Sm(Co_0_._7_2_5Fe_0_._1Cu_0_._1_2Zr_0_._0_4B_0_._0_1_5)_7_._4 melt-spun ribbons. The coercivity (H_c) of the as-spun ribbons increased with the wheel surface speed from 2.8kOe for 10m/s to 14.5kOe for 40m/s. The post-annealing of the melt-spun ribbons from 700 to 900 deg. C for 10min did not lead to a substantial increase of H_c. However, after isothermal aging at 820 deg. C and subsequent slow cooling (0.5 deg. C/min) to 120 deg. C, H_c increased from 2.8 to 10.9kOe for 10m/s, while it decreased from 14.5 to 13.5kOe for 40m/s ribbons. The grain size of the melt-spun ribbon reduced with structural transformation from 2:17H (Th_2Ni_1_7-hexagonal type) to 1:7H (TbCu_7-hexagonal type) as the wheel surface speed was increased. Three-dimensional atom probe analysis showed a boron enriched precipitate at the grain boundaries in the as-spun ribbons, which acts ...
2005-08-01
Modification of the passivity of iron based alloys through ion implantation
International Nuclear Information System (INIS)
As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to evaluate the effects of ...
1764-01-01
Energy Technology Data Exchange (ETDEWEB)
Seismic transects in this area show a strongly reflective Moho of generally low relief, which, in the area of modern transects, consists of a thin zone (< 2 km thick) of short reflectors. The upper mantle is transparent and has a P{sub n} of 7.8-8.0 km/s similar to much of the western US. A lower crustal zone, 2-13 km thick, has variable internal reflectivity and a relatively low velocity of 6.6-6.8 km/s. Upper mantle peridotite xenoliths show both ductile and brittle deformational features and have structures and composition affected by magmatic intrusion; intrusions form complex dike systems and extensive zones of grain boundary infiltration in peridotite xenoliths. Whereas melt infiltration preceded and followed ductile deformation, brittle deformation, represented by closely spaced joint systems and faults, followed ductile deformation and is related to the youngest magmatic episodes. Lower crustal xenoliths are dominantly ...
1990-01-10
Energy Technology Data Exchange (ETDEWEB)
Irradiation-assisted stress corrosion cracking (IASCC) of several types of BWR field components fabricated from solution-annealed austenitic stainless steels (SSs), including a core internal weld, were investigated by means of slow-strain-rate test (SSRT), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and field-emission-gun advanced analytical electron microscopy (FEG-AAEM). Based on the results of the tests and analyses, separate effects of neutron fluence, tensile properties, alloying elements and major impurities identified in the American Society for Testing and Materials (ASTM) specifications, minor impurities, water chemistry, and fabrication-related variables were determined. The results indicate strongly that minor impurities not specified by the ASTM-specifications play important roles, probably through a complex synergism with grain-boundary Cr depletion. These impurities, typically associated with steelmaking and component ...
1996-09-01
Fusion zone microstructure and porosity in electron beam welds of an #alpha# + #beta# titanium alloy
International Nuclear Information System (INIS)
The effect of electron beam welding parameters on fusion zone (FZ) microstructure and porosity in a Ti-6.8 Al-3.42 Mo-1.9 Zr-0.21 Si alloy (Russian designation VT 9) has been investigated. It has been observed that the FZ grain width increased continuously with increase in heat input when the base metal was in the #beta# heat-treated condition, while in the #alpha# + #beta# heat-treated base metal welds, the FZ grain width increased only after a threshold energy input. The difference is attributed to both the weld thermal cycle and the pinning effect of equiaxed primary alpha on grain growth in the heat-affected zone (HAZ) of #alpha# + #beta# heat-treated base metal. Postweld heat treatment (PWHT) in the subtransus and supertransus regions did not alter the columnar grain morphology in the FZ, possibly due to the lack of enough driving force for the formation of new grains by the breaking up of the columnar grains and grain boundary movement ...
1999-03-01
Energy Technology Data Exchange (ETDEWEB)
The friction and wear properties of glass fiber reinforced composites of nylons (nylon 6, nylon 66 and nylon 46) with different crystallinities due to their molecular structures were investigated by sliding them with alumina ceramics and using a pin-on-disk friction machine. The friction coefficients of the glass fiber reinforced nylons in oil were lower and more stable than those in air from the initial stage of friction. The transfer of nylon matrix to adhere onto the alumina surface in air was so much greater than in oil that the alumina surface could not be recognized. Consequently, a different between the friction and wear properties in air and in oil was resulted. Reinforcement of nylons with glass fiber remarkably improved their friction properties in oil by its lubricating action, while the wears were rather high contrary to what was expected. This tendency was conspicuous for nylon 46 with high crystallinity. Breakage and extracting of glass fibers from nylon composites were ...
1997-09-01
Focused ion beam assisted three-dimensional rock imaging at submicron scale
Energy Technology Data Exchange (ETDEWEB)
Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of gallium ions (Ga+) accelerated by potentials of up to 30 kV and currents up to 20,000 ...
2003-05-09
Energy Technology Data Exchange (ETDEWEB)
The contaminants that are potentially present in the coal-derived gas stream and their thermochemical nature are discussed. Accelerated testing was carried out on Ni-YSZ/YSZ/LSM solid oxide fuel cells (YSZ: yttria stabilized zirconia and LSM: lanthanum strontium manganese oxide) for eight main kind of contaminants: CH{sub 3}Cl, HCl, As, P, Zn, Hg, Cd and Sb at the temperature range of 750-850 C. The As and P species, at 10 and 35 ppm, respectively, resulted in severe power density degradation at temperatures 800 C and below. SEM and EDX analysis indicated that As attacked the Ni region of the anode surface and the Ni current collector, caused the break of the current collector and the eventual cell failure at 800 C. The phosphorous containing species were found in the bulk of the anode, they were segregated and formed ''grain boundary'' like phases separating large Ni patches. These species are presumably ...
2009-09-05
Effect of the morphology of the primary alpha phase on the mechanical properties of Beta-CEZ alloy
International Nuclear Information System (INIS)
A new metastable beta titanium alloy, Beta-CEZ, has been developed by CEZUS. This alloy was designed for use at moderate temperatures up to 450 C (840 F). Alloy requirements also included high mechanical strength, high fracture toughness and improved creep resistance as compared to existing beta alloys. The understanding of the relationships between processing/microstructure/mechanical properties in the alloy may lead to applications of such promising material in current and future airplanes. In this study, a combination of several forging routes, which included through-transus, hot-die and warm-die forging, with subsequent heat treatments were selected in order to evaluate the microstructure-mechanical property relationships. It was found that the recrystallized prior beta grain boundary alpha, characteristic of the through-transus forging process, lead to an improved tensile-fracture toughness balance. The size of the primary alpha structure ...
1993-02-21
Densification behavior and properties of Y_2O_3-containing #alpha#-SiAlON-based composites
International Nuclear Information System (INIS)
Different SiAlON composites based on #alpha#'-SiAlON are investigated, with respect to the phase relationships, densification behavior, and mechanical properties. The compositions are located on a phase-diagram line parallel to the Si_3N_4-Y_2O_3#centre dot#9AlN compound in the Si_3N_4-SiO_2-AlN-Al_2O_3-Y_2O_3-YN system. Analysis of the reaction sequences shows that the formation of the composites is associated with the transient appearance of Y_4Al_2O_9 (YAM), yttrium-aluminum-garnet (YAG), melilite, and a nitrogen-rich liquid phase. The small shift of compositions on the Si_3N_4-Y_2O_3#centre dot#9AlN compound phase-diagram line toward the Al_2O_3-rich side offers the advantage of a higher sinterability and the removal of the melilite phase from a wide range of compositions containing #alpha#'-SiAlON and polytypes. The #alpha#'/#beta#'-SiAlON composites show better mechanical properties in comparison to pure #alpha#'-SiAlON and composites of #alpha#'-SiAlON and polytypes. A ...
Creep and fatigue of alloy 800 in helium
International Nuclear Information System (INIS)
Proposals for use of Alloy 800 as a H.T.R. boiler material have prompted studies of its creep and high temperature fatigue properties in impure helium with comparative tests in air. In impure helium, as expected in a H.T.R., reactions of potential importance are selective oxidation (of chromium, aluminium and titanium) and possibly carburisation from carbon monoxide or methane. In air, general oxidation will occur, possibly accompanied by nitridation. The effects of these reactions will depend on specimen geometry and the nature of the deformation. Two important possibilities are: (i) that environment affects the structure and properties of a surface zone of material undegoing uniform deformation (this may modify creep rate and crack nucleation); and (ii) that environment affects behaviour of a small region (e.g. at the root of a notch or ahead of a crack) in a specimen undergoing non-uniform deformation (this will modify crack growth and hence rupture life or fatigue endurance). This ...
Energy Technology Data Exchange (ETDEWEB)
A series of stainless austenitic and ferritic materials was exposed for 100 days to boiling nitric acid which contained no corrosion products; the corrosion rates and depths of the grain boundary attack were observed. - Provided the structure is precipitation-free, the following are suitable for long-term exposure; the austenitic steels X 2 CrNi 19 11, X 1 CrNi 25 21, X 1 CrNiMoN 25 22 2 and X 1 NiCrMoCu 31 27 4, the practically Mo-free and Cu-free development steel X 1 NiCr 31 27, and the highly Mo-alloyed variant X 1 NiCrMoCu 31 27 5. - In the case of alloy NiCr21Mo it is advisable to limit the concentration and/or temperature of the nitric acid. - The 'superferrite' X 1 CrNiMoNb 28 4 2, the Japanese steel X 1 CrNiNb 30 2 and the austenitic steels X 2 CrNiMoN 17 13 3 and X 1 CrNiMoN 25 22 2 in the version with high nickel content are unsuitable. The decisive factor affecting the surface-removal rates is the chromium content ...
1988-01-01
International Nuclear Information System (INIS)
Engineering ceramics have excellent properties such as high strength, high hardness and high heat resistance compared with metallic materials. To apply the ceramic in fast reactor environment, it is necessary to evaluate the sodium compatibility and the influence of sodium on the mechanical properties of ceramics. In this study, the influence of high temperature sodium on the mechanical properties of sintered ceramics of conventional and high purity Al_2O_3, SiC, SiAlON, AlN and unidirectional solidified ceramics of Al_2O_3/YAG eutectic composite were investigated by means of flexure tests. Test specimens were exposed in liquid sodium at 823K and 923K for 3.6Ms. There were no changes in the flexural strength of the conventional and high purity Al_2O_3, AlN and Al_2O_3/YAG eutectic composite after the sodium exposure at 823K. On the contrary, the decrease in the flexural strength was observed in SiC and SiAlON. After the sodium exposure at 923K, there were also no changes in the ...
A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/Al
Energy Technology Data Exchange (ETDEWEB)
A solid-state precipitation process was used to prepare superconducting tapes containing an A15 phase, V/sub 3/Ga or Nb/sub 3/Al, in a ductile niobium or vanadium containing BCC matrix. Ingots weighing as large as 30 to 50 gms of V-(14 approx. 19 at. %) Ga and Nb-(13 approx. 22 at. %) Al were prepared by arc-melting, homogenized, quenched, warm-rolled over 99% into tape, and aged at temperatures in the range 600/sup 0/C to 1000/sup 0/C to precipitate the superconducting A15 phase. The features demonstrated by the process are very attractive for practical applications. In the V-Ga system, transmission electron microscopy (TEM) studies revealed the A15 precipitates in an elongated form. However, for the Nb-Al samples, deformed and aged at 750/sup 0/C, TEM studies revealed A15 precipitation in fine equi-axed particles which formed as a semi-continuous network over sub-grain boundaries formed by the recovery of deformation-induced dislocations. In ...
1980-09-01
A Flow Stress Formulation of Magnesium Alloy at Elevated Temperature
International Nuclear Information System (INIS)
Dynamic recrystallization (DRX) is the main softening mechanism of magnesium alloy AZ31B in hot deformation. Theoretically, in the flow rule the atomic diffusibility and the driving force of dislocation migration are dependent on the temperature, and the dislocation density and the cumulation of grain boundary energy are dependent on the strain rate. The peak stress will appear when the flow driving force and resistance force reach a balance, after which the stress descending will take place due to recrystallization fraction. Since the DRX is a thermally activated process, the recrystallized volume fraction can be regarded as the function of strain through Avrami equation. Based on this idea, the paper proposes a new constitutive model characterizing dynamic recrystallization for magnesium alloy AZ31B. The model is described by a peak stress and a strain softening rate, in which the peak stress depends only on Zener-Hollomon parameter and is ...
2007-05-17
Wafer and Solar Cell Characterization by GT-PVSCAN6000
The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.
2002-08-01
British Library Electronic Table of Contents (United Kingdom)
Abstract Background/Aims: Transforming growth factor-b (TGF-b) initiates and maintains epithelial-mesenchymal transition (EMT), which causes disassembly of tight junctions and loss of epithelial cell polarity. In mature hepatocytes during EMT induced by TGF-b, changes in the expression of tight junction proteins and the fence function indicated that epithelial cell polarity remains unclear. Methods: In the present study, using primary cultures of adult rat hepatocytes at day 10 after plating, in which epithelial cell polarity is well maintained by tight junctions, we examined the effects of 0.01-20 ng/ml TGF-b on the expression of the integral tight junction proteins, claudin-1, -2 and occludin, as well as the fence function. Results: In adult rat hepatocytes, TGF-b induced EMT, which was ...
2008-01-01
The role of Holliday junction resolvases in the repair of spontaneous and induced DNA damage
UK PubMed Central (United Kingdom)
DNA double-strand breaks (DSBs) and other lesions occur frequently during cell growth and in meiosis. These are often repaired by homologous recombination (HR). HR may result in the formation of DNA...Full Text Available
2011-09-01
International Nuclear Information System (INIS)
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main ...
2005-02-15
UK PubMed Central (United Kingdom)
Interkingdom signaling is established in the gastrointestinal tract in that human hormones trigger responses in bacteria; here, we show that the corollary is true, that a specific bacterial signal,...Full Text Available
2010-01-05
The Reduction of TED in Ion Implanted Silicon
International Nuclear Information System (INIS)
The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have ...
2008-11-03
Energy Technology Data Exchange (ETDEWEB)
The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in ...
1997-11-07
Spontaneous quantal transmitter release: a statistical analysis and some implications
UK PubMed Central (United Kingdom)
1. Miniature end-plate potentials (m.e.p.p.s) were intra- and extracellularly recorded from neuromuscular junctions in rat phrenic nerve—diaphragm preparations in vitro....Full Text Available
1973-07-01
Energy Technology Data Exchange (ETDEWEB)
Evaluates experiments aimed at selecting optimum design and technical specifications of a support system for junctions of gate roads and longwall faces mined by shearer loaders and powered supports. A set of supports used at a junction of a working face and a gate road consisted of 2 supports (each made up of a roof bar and two hydraulic props). Roof bar length ranged from 4.0 to 5.5 m and from 7.0 to 9.0 m respectively. The support roof bars were parallel to the longitudinal axis of a gate road. Stress distribution in strata surrounding a junction of a working face and a gate road was analyzed. The finite element method was used. Convergence of the roof and the floor of a gate road depending on support yield strength and distance from a measuring point to the supports was analyzed. Recommendations are made for optimum yield strength of the supports. Nomograms for selecting optimum support yield strength are given. ...
1993-01-01
UK PubMed Central (United Kingdom)
It is generally accepted that hypoxia and recovery from oxygen deprivation contribute to the breakdown and ulceration of human skin. The effects of these stresses on proliferation, differentiation...Full Text Available
2009-01-01
Optimization of advanced PMOS junctions using Ge, B and F co-implants
International Nuclear Information System (INIS)
The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized ...
2005-08-01
Nonlinear response of superconductors to alternating fields and currents
This report discusses the following topics on superconductivity: nonlinearities in hard superconductors such as surface impedance of a type II superconductimg half space and harmonic generation and intermodulation due to alternating transport currents; and nonlinearities in superconducting weak links such as harmonic generation by a long Josephson Junction in a superconducting slab.
1997-10-08
Energy Technology Data Exchange (ETDEWEB)
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during ...
1995-05-01
UK PubMed Central (United Kingdom)
Oxidative stress has been implicated in the etiology of age-related muscle loss (sarcopenia). However, the underlying mechanisms by which oxidative stress contributes to sarcopenia have not been thoroughly...Full Text Available
2010-05-01
High Efficiency Solar Cell on Low Cost Metal Foil Substrate
During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...
Cadherin Mechanics and Complexation: The Importance of Calcium Binding
UK PubMed Central (United Kingdom)
E-cadherins belong to a family of membrane-bound, cellular adhesion proteins. Their adhesive properties mainly involve the two N-terminal extracellular domains (EC1 and EC2). The junctions between these...Full Text Available
2005-12-01
UK PubMed Central (United Kingdom)
SUMMARYAmeloblastin (AMBN) is the second most abundant extracellular matrix protein produced by the epithelial cells called ameloblasts and is found mainly in forming dental enamel....Full Text Available
2009-06-01
Method of fusing segments of armored logging cables
Energy Technology Data Exchange (ETDEWEB)
The method is used for repairing armored logging cables. It consists of preparing armor, subsequent connection of current-conducting strands and wires of the armor, and laying of the armor. Sections of connecting the wires of the armor of the lower and upper layers are scattered over the length of the fused section of the cable. In order to improve the fault strength of the cable, the junctions of connection of the armor wires are scattered among themselves at a distance determined by the Euler formula, and thermal tempering of the wire sections is carried out near these junctions, and then the fused section of the cable is reinforced.
1982-01-01
Entangled quantum currents in distant mesoscopic Josephson junctions
Energy Technology Data Exchange (ETDEWEB)
Two mesoscopic SQUID rings which are far from each other are considered. A source of two-mode nonclassical microwaves irradiates the two rings with correlated photons. The Josephson currents are in this case quantum mechanical operators, and their expectation values with respect to the density matrix of the microwaves yield the experimentally observed currents. Classically correlated (separable) and quantum mechanically correlated (entangled) microwaves are considered, and their effect on the Josephson currents is quantified. Results for two different examples that involve microwaves in number states and coherent states are derived. It is shown that the quantum statistics of the tunnelling electron pairs through the Josephson junctions in the two rings are correlated.
2004-12-22
Computed Tomography of the cranio-cervical junction in rhematoid arthritis
International Nuclear Information System (INIS)
Twenty rheumatoid arthritis (RA) patients with involvement of the cranio-cervical junction (CCJ) were given CT scan. In most cases the myelo-CT technique with the lumbar injection of small quantities of non-ionic contrast medium was adopted; CT easily diagnosed the horizontal and vertical dislocations on the CCJ, the bone strcture lesions and the inflammatory masses. A high frequency of medullary compressions was also found in these patients. Myelo-CT appears to be the technique of choice for the precise definition of the various factors responsible for the neurological complications found in RA of the CCJ.
1987-01-01
International Nuclear Information System (INIS)
Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction implanted at 2 keV and a dosage of 1 X 10"1"3 /cm"2, and the ...
2004-06-01
Energy Technology Data Exchange (ETDEWEB)
We report on a new experimental approach to the size estimation of the hot spot induced by ionizing particles in a Josephson tunnel junction. Here, in contrast to the case of a superconducting strip, it is possible to investigate the hot spot dynamics in absence of effects due to the heating induced by the bias current. The reported experiment is based on the motion of Abrikosov vortices, trapped in the thin films constituting the junction electrodes, under 5.6 MeV {alpha}-particle irradiation. The fast time evolution of a hot spot, combined with the presence of Abrikosov vortices, produces a change of the static magnetic field in the junction area and thus a change of the critical current value, I{sub c}. Measurements of I{sub c} during the {alpha}-particle irradiation and in presence of trapped Abrikosov vortices allow to determine the rate of appearance of those I{sub c} changes. The behavior of the average appearance ...
1997-11-01
Solid state diffusion in metal silicides
International Nuclear Information System (INIS)
Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in ...
Energy Technology Data Exchange (ETDEWEB)
Nickel-based alloys are presently used as brazing filler metals for components which undergo mechanical stress in corrosive conditions, f. e. heat exchangers. When soldering chrome containing steel parts with nickel based brazing filler metals additionally containing boron and silicon a reaction of chrome and boron can occur. This evolution of chromium borides, depositing on grain boundaries, causes a lack of chrome in the steel part. A drop of the chrome content in the parts below 13 % leads to a loss of corrosion resistance. It is possible to change the microstructure of brazing joints by modification with chromium and molybdenum. Continuous brittle phases could be successfully avoided with this modification. Furthermore it could be shown that the choice of additives, the heating respectively cooling rate and the brazing temperature have important influence on the microstructure evolution and therefore on the mechanical and corrosive ...
2008-01-15
International Nuclear Information System (INIS)
To investigate the effect of external loads arising from differential thermal expansion between a substrate and a surface-mount component during thermomechanical cycling, specimens with a nickel surface-mount component on a copper substrate were prepared. Specimens consisted of two 100 #mu#m thick 1 mm"2 solder joints about 9 mm apart, with two designs. In one specimen (denoted 'dual-shear'), the as-fabricated joints were not stressed due to differential contraction during solidification and cool down. In the other specimen (denoted 'component'), a continuous copper substrate between the joints caused the nickel component to be put in compression during cool down, which imposed shear on the joints. To impose differential thermal shear strains, the 'dual-shear' specimen was clamped to a copper block to cause a significant reversal in sign of the shear imposed on the solder joint during cycling. In the 'component' specimen configuration, the existing compressive strain in the component ...
2006-04-15
The Structural and Optical Properties of GaAs1-xPx /GaAs
International Nuclear Information System (INIS)
GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the GaAs1-xPx p-n ...
2008-08-25
String Junctions and Holographic Interfaces
In this paper we study half-BPS type IIB supergravity solutions with multiple $AdS_3\\times S^3\\times M_4$ asymptotic regions, where $M_4$ is either $T^4$ or $K_3$. These solutions were first constructed in [1] and have geometries given by the warped product of $AdS_2 \\times S^2 \\times M_4 $ over $\\Sigma$, where $\\Sigma$ is a Riemann surface. We show that the holographic boundary has the structure of a star graph, i.e. $n$ half-lines joined at a point. The attractor mechanism and the relation of the solutions to junctions of self-dual strings in six-dimensional supergravity are discussed. The solutions of [1] are constructed introducing two meromorphic and two harmonic functions defined on $\\Sigma$. We focus our analysis on solutions corresponding to junctions of three different conformal field theories and show that the conditions for having a solution charged only under Ramond-Ramond three-form fields reduce to relations involving the ...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results are discussed in ...
2003-09-15
International Nuclear Information System (INIS)
Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P"+N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P"+N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results are discussed in comparison ...
2003-09-15
High bandgap window layer for GaAs solar cells and fabrication process therefor
The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the ...
1979-05-29
Energy Technology Data Exchange (ETDEWEB)
The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.
2005-12-05
Pinned fluxons in a Josephson junction with a finite-length inhomogeneity
We consider a Josephson junction system installed with a finite length inhomogeneity, either of microresistor or of microresonator type. The system can be modelled by a sine-Gordon equation with a piecewise-constant function to represent the varying Josephson tunneling critical current. The existence of pinned fluxons depends on the length of the inhomogeneity, the variation in the Josephson tunneling critical current and the applied bias current. We establish that a system may either not be able to sustain a pinned fluxon, or - for instance by varying the length of the inhomogeneity - may exhibit various different types of pinned fluxons. Our stability analysis shows that changes of stability can only occur at critical points of the length of the inhomogeneity as a function of the (Hamiltonian) energy density inside the inhomogeneity - a relation we determine explicitly. In combination with continuation arguments and Sturm-Liouville theory, we determine the ...
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
Objectives The optimal timing of pyeloplasty for children diagnosed with ureteropelvic junction obstruction (UPJO) after workup for antenatal hydronephrosis is disputed. We sought to examine the potential costs and clinical outcomes of treatment protocols featuring different indications for pediatric pyeloplasty using Markov models. Methods Cost and outcomes analysis using Markov modeling was performed for three treatment algorithms: medical management, immediate pyeloplasty (during the first year of life), and pyeloplasty after no improvement on imaging. The costs were determined from the perspective of the medical institution. The variables tracked during Markov model simulation included age at resolution of UPJO, the proportion of patients with worsened hydronephrosis, the number of pye...
2008-01-01
International Nuclear Information System (INIS)
The methods of superconducting device fabrication by lithography and multilevel processing usually require a number of processing steps with lithographic resolution and alignment adequate for the scale of the device be fabricated. As an alternative, the focused ion beam (FIB) microscope is increasingly being used directly to fabricate devices. A major advantage of using a FIB compared to other lithography methods is its flexibility and high resolution. It allows in-situ, milling (#propor to#5 nm at a beam current of 1 pA) to a variety of depths, and imaging (2 nm) of the sample. In this paper we describe our development of junction fabrication techniques using the FIB and their application in creating a range of potential sensor devices and quantum electronics applications. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2005-03-01
Breathers in Josephson junction ladders: Resonances and electromagnetic wave spectroscopy
DEFF Research Database (Denmark)
We present a theoretical study of the resonant interaction between dynamical localized states (discrete breathers) and linear electromagnetic excitations (EE's) in Josephson junction ladders. By making use of direct numerical simulations we find that such an interaction manifests itself by resonant steps and various sharp switchings (voltage jumps) in the current-voltage characteristics. Moreover, the power of ac oscillations away from the breather center (the breather tail) displays singularities as the externally applied dc bias decreases. All these features may be mapped to the spectrum of EE's that has been derived analytically and numerically. Using an improved analysis of the breather tail, a spectroscopy of the EE's is developed, The nature of breather instability driven by localized EE's is established.
2001-01-01
Energy Technology Data Exchange (ETDEWEB)
In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).
1991-05-01
Tunneling spectroscopy of anisotropic superconductors
Energy Technology Data Exchange (ETDEWEB)
Tunneling spectroscopy of normal-insulator-superconductor junction is investigated theoretically. In anisotropic superconductors, differently from the case of isotropic superconductor, the effective pair potentials felt by quasiparticles depend on the direction of their motion. By taking this effect into account, it is shown that the conductance spectra strongly depend on the crystal orientation. Using Green`s function method, local density of states (LDOS) in superconductor is also calculated. The close relation between conductance spectra and LDOS is presented. The calculation is compared with experimental spectra of high-{Tc} superconductors.
1996-12-31
Transient enhanced diffusion and deactivation of ion-implanted As in strained Si
International Nuclear Information System (INIS)
First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.
2005-08-01
Schottky barrier and homojunction gallium arsenide solar cells
Energy Technology Data Exchange (ETDEWEB)
New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar cells were fabricated using several techniques. One involved ...
1983-01-01
International Nuclear Information System (INIS)
A small cholangiocarcinoma was detected at autopsy in a patient with thorotrastosis who died from the rupture of esophageal varices at the esophagogastric junction. Prior to the advent of recent diagnostic imaging technique, a correct antemortem diagnosis could only be obtained from tumor markers. However, the tendency for the opacity of the liver to decrease slowly with time and develop uneven trabeculation suggests that small tumors may be difficult to detect against such a non-homogeneous background. (author).
Modeling of the kinetics of dislocation loops
Energy Technology Data Exchange (ETDEWEB)
The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.
1999-01-01
Energy Technology Data Exchange (ETDEWEB)
A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening ...
2002-01-01
UK PubMed Central (United Kingdom)
The endoplasmic reticulum (ER) is composed of tubules, sheets, and three-way junctions, resulting in a highly conserved polygonal network in all eukaryotes. The molecular mechanisms responsible for...Full Text Available
2009-11-01
Application of Pd silicide in the process of silicon detectors
Energy Technology Data Exchange (ETDEWEB)
A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.
1990-04-01
Energy Technology Data Exchange (ETDEWEB)
The aim of this work was the examination of the coarse grain recrystallisation of the {gamma}-free ODS nickel-based alloy PM 1000 depending on the various parameters due to the processing during heat treatment. After isotropic hot compacting (HIP) of the mechanically alloyed powder, one observes a homogeneous sub-microscopic fine grain structure which can coarsen during high temperature heat treatment, due to sufficiently high driving force from the grain boundary energy via abnormal grain growth to 600 times its size. The setting of the elongated high temperature resistant recrystallisation structure is, however, not connected with this. The dependence of the sucess of re-crystallisation on the re-forming parameters (re-forming temperature and degree of re-forming) was shown by a socalled re-forming card. In order to achieve re-crystallisation to a coarse and aligned grain structure, apart from a certain absolute minimum degree of re-forming, ...
1996-05-01
International Nuclear Information System (INIS)
In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be stabilized by choosing the optimized co-implant ...
2008-12-05
Surface Topography of 'Hotspot' Regions from a Single Cell SRF Cavity
Energy Technology Data Exchange (ETDEWEB)
Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitatively low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed the crystal structure surrounding the pits via crystal phase orientation mapping, while 3D profilometry gave information ...
2009-05-01
Point defect engineering in preamorphized silicon enriched with fluorine
International Nuclear Information System (INIS)
Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able to completely ...
2006-12-01
Noise and microresonance of critical current in Josephson junction induced by Kondo trap states
We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the ...
2011-01-01
Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions
Energy Technology Data Exchange (ETDEWEB)
Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co{sub 2}MnSi (CMS) and Co{sub 2}FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO{sub 2}/V/CMS/MgO/CFS and SiO{sub 2}/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co{sub 2}MnSi.
2009-05-15
Energy Technology Data Exchange (ETDEWEB)
The authors will be conducting an integrated seismic experiment to image the structure of the crust and upper mantle of northern California immediately before and after passage of the Mendocino Triple Junction. The purpose of this representation is to describe the project to other scientists interested in geological and geophysical processes in this region and to solicit input relevant to detailed siting of the funded seismic profiles. The experiment encompasses two field seasons: onshore seismic refraction/wide angle reflection data acquisition along three long profiles scheduled for late summer, 1993; and MCS deep crustal seismic reflection data acquisition accompanied by simultaneous large aperture recording using both ocean bottom and onshore seismographs, tentatively scheduled for summer, 1994. This study represents a component of a long-term, multi-disciplinary effort on the part of many investigators to exploit this well defined system as an in-situ ...
1993-04-01
Energy Technology Data Exchange (ETDEWEB)
In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...
2005-08-01
International Nuclear Information System (INIS)
In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD technique over standard ion ...
2005-08-01
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films
International Nuclear Information System (INIS)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films
Energy Technology Data Exchange (ETDEWEB)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
1993-07-16
Energy Technology Data Exchange (ETDEWEB)
The classical phenomenon of position-effect variegation (PEV) is the mosaic expression that occurs when a chromosomal rearrangements moves a euchromatic gene near heterochromatin. A striking feature of this phenomenon is that genes far away from the junction with heterochromatin can be affected, as if the heterochromatic state {open_quotes}spreads.{close_quotes} We have investigated classical PEV of a Drosophila brown transgene affected by a heterochromatic junction {approximately} 60 kb away. PEV was enhanced when the transgene was locally duplicated using P transposase. Successive rounds of P transpose mutagenesis and phenotypic selection produced a series of PEV alleles with differences in phenotype that depended on transgene copy number and orientation. As for other examples of classical PEV, nearby heterochromatin was required for gene silencing. Modifications of classical PEV by alterations at a single site are unexpected, and these ...
1996-02-01
Some sources of error in property indices for coke-oven charge
The author points out that errors in certain measurements are preventing improvements in coke: thermocouples (errors caused by the thermocouple installation and variations in the temperature of the cold junctions); dilatometers (errors caused by size of heating block and differences in starting temperature led to differences between two instruments); errors in measuring the bulk density of the coking charge. The elimination of these sources of error in determinations of the technological and physical properties of coke oven charge should assist in the study of other problems which are delaying improvements in blast furnace coke production.
1981-01-01
Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation
Energy Technology Data Exchange (ETDEWEB)
Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.
2007-09-25
Si-JFET devices and related noise behavior under irradiation
Energy Technology Data Exchange (ETDEWEB)
Monolithic N-channel junction field effect transistors (NJFETs) dc characteristics, small signal parameters and noise have been studied from 300 K down to cryogenic temperatures before and after irradiation with {sup 60}Co {gamma}-rays and fast neutrons (1 MeV). Radiation induced effects on dc parameters and noise are reviewed. Noise spectral density measurements performed at various temperatures have shown that the radiation induces a noise increase which is temperature and frequency dependent. (orig.). 14 refs.
1998-02-01
Roentgenological analysis of sternocostoclavicular hyperostosis by computed tomography
Energy Technology Data Exchange (ETDEWEB)
Roentgenological analysis of the anterior chest wall was performed in twenty six patients with sternocostoclavicular hyperostosis. Initial hyperostotic change was seen at the first costosternal junction with ventral protrusion. Hyperostosis gradually developed around the first ribs, and irregular hyperostotic changes were also seen along the costoclavicular ligaments. Even in the final stage, however, sternoclavicular joint spaces were well preserved. These findings suggest that sternocostoclavicular hyperostosis is a disorder initiated around the costal cartilage including the periosteum and perichondrium, and that arthritis is not a condition stemming from that disorder.
1989-01-01
Randomization of heavily damaged regions in annealed low energy Ge{sup +}-implanted (0 0 1)Si
Energy Technology Data Exchange (ETDEWEB)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-15
Randomization of heavily damaged regions in annealed low energy Ge"+-implanted (0 0 1)Si
International Nuclear Information System (INIS)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-01
Energy Technology Data Exchange (ETDEWEB)
This paper reported on a study in which partial discharge (PD) measurements were performed on 6 underground transmission cable circuits to determine the effectiveness of PD measurements on fluid fill cables. The cables were between 37 and 56 years old. PD activity was detected from the terminations of H11L and H3L Cable 2. However, for cables from H3L Basin TS to Mill Street junction, PD activity was detected originating from within the main cable insulation.
2009-07-01
Josephson effect mm-wave receivers
International Nuclear Information System (INIS)
Josephson effect heterodyne mixers with external local oscillators are very promising low noise mm-wave receivers for applications such as radio astronomy. Experiments at 36 GHz have shown that both the noise and the conversion efficiency of mixers made using Nb point contacts are in quantitative agreement with values calculated from the resistively shunted junction (RSJ) model. Preliminary measurements at 140 GHz suggest that this agreement extends to higher frequencies. In this paper the theoretical limits to the sensitivity of such receivers are explored as a function of the signal frequency. (Auth.).
Integrated photonic qubit quantum computing on a superconducting chip
International Nuclear Information System (INIS)
We study a quantum computing system using microwave photons in transmission line resonators on a superconducting chip as qubits. We show that linear optics and other controls necessary for quantum computing can be implemented by coupling to Josephson devices on the same chip. By taking advantage of the strong nonlinearities in Josephson junctions, photonic qubit interactions can be realized. We analyze the gate error rate to demonstrate that our scheme is realistic even for Josephson devices with limited decoherence times. As a conceptually innovative solution based on existing technologies, our scheme provides an integrated and scalable approach to the next key milestone for photonic qubit quantum computing.
2010-06-01
Human experience with an endoluminal, endoscopic, gastrojejunal bypass sleeve
British Library Electronic Table of Contents (United Kingdom)
Background This report describes the authors? experience with a unique endoluminal, endoscopically delivered and retrieved gastroduodenojejunal bypass sleeve, including short-term weight loss and changes in comorbidities. Methods A prospective, single-center trial was designed. The patients were morbidly obese individuals who met the National Institutes of Health criteria for bariatric surgery. The device used was a unique gastroduodenojejunal bypass sleeve secured at the esophagogastric junction with endoscopic and laparoscopic techniques and designed to create an endoluminal gastroduodenojejunal bypass. At completion of the trial, the device was explanted with endoscopic retrieval. The primary end points were safety and incidence of adverse events. The secondary outcomes included the per...
2011-01-01
HTSC devices fabricated by selective epitaxial growth
International Nuclear Information System (INIS)
The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)
1999-04-01
Field applications of a radon barrier to reduce indoor airborne progeny
International Nuclear Information System (INIS)
The use of uranium mill tailings in the foundations of dwellings has resulted in indoor radon progeny concentrations and gamma exposures in excess of levels presently allowed for the general public. An account is given of the applications of an epoxy coating on the indoor faces of the concrete foundations of three buildings in Grand Junction, Colorado. Epoxy barriers were shown to be effective for preventing radon influx into structures. Gamma exposure rates must be analyzed to ensure that buildup behind the barrier will not introduce an unacceptable gamma exposure level. The use of a sealant is especially economical in situations where structural integrity may be jeopardized by physical removal of uranium mill tailings. (author).
Energy Technology Data Exchange (ETDEWEB)
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.
2004-01-25
Botulinum toxin—Beyond wrinkles
British Library Electronic Table of Contents (United Kingdom)
Botulinum neurotoxin is produced by the bacterium, Clostridium botulinum. The neurotoxin inhibits acetylcholine at the neuromuscular junction, thus interfering with overall muscular contraction. Botulinum neurotoxin is commonly used for the following medical conditions: cervical dystonia, upper limb spasticity, blepharospasm, strabismus, and hyperhydrosis. However, the use of botulinum neurotoxin was recently approved for the prophylaxis of headaches in adults with chronic migraines. The proposed mechanism of botulinum neurotoxin is no longer solely limited to the inhibition of acetylcholine. There are new mechanisms emerging that involve inhibition of proinflammatory agents and neuropeptides involved in chronic pain. Consequently, there is a disruption of the overall sensory feedback loop...
2011-01-01
ALKALINE LEACH-FILTRATION PILOT PLANT TESTING OF HOMESTAKE ORE-SECTION 32
Homestake Ore from the Ambrosia Lake District of New Mexico was treated in the Alkaline Leach-- Filtration Pilot Plant at Grand Junction, Colorado. Detailed information on grinding, leaching, flltration, and precipitation in connection with the processing of this ore is given. Autoclave leaching and continuous yellow cake precipitation were employed. The circuit liquors contnined organic material that was detrimental to clariflcation and precipitation and the results show that ihe ore was amenable to the Alkaline Leach--Filtration process only if a special additive was used. (auth)
1958-06-19
A new type active personal dosemeter with a solid state detector
International Nuclear Information System (INIS)
We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.
1988-04-01
A Covered Nitinol Stent Fracture in a Patient with a Malignant Esophageal Stricture: A Case Report
Energy Technology Data Exchange (ETDEWEB)
Self-expanding metallic stent insertion has been widely applied for the palliative treatment of malignant esophageal strictures. Although it is known as an easy, safe, and effective procedure, complications are well known and include things such as stent migration and esophageal stent occlusion caused by tumor in growth. However, metallic stent fractures have been rarely reported in the esophagus, especially for nitinol stents. We report a case of a stent fracture associated with migration in a patient with a malignant esophageal stricture near the gastroesophageal junction. It is highly probable that the stent fracture was due to chemical erosion of the stent caused by gastric juice
2008-11-15
Energy Technology Data Exchange (ETDEWEB)
A detailed description is given of the design, fabrication, and installation of oil-filled 500-kV cable lines used for the first time in the USSR for transmitting electric power from step-up transformers installed several meters from the hydroelectric generators to an outdoor distribution system or a junction point at which they are connected to overhead power transmission lines. These lines are 950 to 1050 m long and they are placed at levels differing by 45 m along the route. These lines can transmit power as great as 630 MV.A.
1980-01-01
International Nuclear Information System (INIS)
Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from 100eV to 1keV and doses ...
2005-08-01
In vertebrates, the positioning of the internal organs relative to the midline is asymmetric and evolutionarily conserved. A number of molecules have been shown to play critical roles in left-right patterning. Using representational difference analysis to identify genes that are differentially expressed on the left and right sides of the chick embryo, we cloned chick Claudin-1, an integral component of epithelial tight junctions. Here, we demonstrate that retroviral overexpression of Claudin-1, but not Claudin-3, on the right side of the chick embryo between HH stages 4 and 7 randomizes the direction of heart looping. This effect was not observed when Claudin-1 was overexpressed on the left side of the embryo. A small, but reproducible, induction of Nodal expression in the perinodal region on the right side of the embryo was noted in embryos that were injected with Claudin-1 retroviral particles on their right sides. However, no changes in Lefty,Pitx2 or cSnR ...
2006-02-24
Energy Technology Data Exchange (ETDEWEB)
In nuclear fuel, in approximately one quarter of the fissions, one of the two formed fission products is gaseous. These are mainly the noble gases xenon and krypton with isotopes of xenon contributing up to 90% of the product gases. These noble fission gases do not combine with other species, and have a low solubility in the normally used uranium oxide matrix. They can be dissolved in the fuel matrix or precipitate in nanometer-sized bubbles within the fuel grain, in micrometer-sized bubbles at the grain boundaries, and a fraction also precipitates in fuel pores, coming from fuel fabrication. A fraction of the gas can also be released into the plenum of the fuel rod. With increasing fission, and therefore burn-up, the ceramic fuel material experiences a transformation of its structure in the 'cooler' rim region of the fuel. A subdivision occurs of the original fuel grains of few microns size into thousands of small grains of ...
2008-07-01
Energy Technology Data Exchange (ETDEWEB)
The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.
2008-10-31
British Library Electronic Table of Contents (United Kingdom)
Two analytical methods were proposed in this research, coupled electro-thermal finite element (FE) analysis and thermal-mechanical FE analysis, to analyze the mechanical behavior of bonding wire of power module under cyclic power loads, and the International Electrotechnical Commission standard is adopted in conducting a power cycling test. The exterior temperature distribution was measured by an infrared thermometer. Moreover, the junction temperature is calculated from the given thermal impedance of the semiconductor chip, chip power loss, and case temperature. Subsequently, the simulated temperature distribution via electro-thermal FE analysis is compared with experimental results to validate the methodology used in the aforementioned analysis. The analysis shows compressive stress at t...
2011-01-01
Targeted integration of baboon endogenous virus in the BEVI locus on human chromosome 6.
The infection of cultured human cells with baboon endogenous virus (BEV) frequently leads to an association of viral DNA with a specific genetic locus (termed BEVI, for baboon endogenous virus infection) on chromosome 6. Restriction endonuclease digestion of DNA from BEV-infected human cells and their derived somatic cell clones frequently revealed a common cellular DNA sequence in the proximity of one of the junctions between cellular DNA and the integrated virus. We propose that a short cellular DNA sequence, repeated on chromosome 6 and separated by unique DNA sequences, presents a high-affinity target for the integration of BEV in human cells. PMID:6401843
1983-01-13
International Nuclear Information System (INIS)
Electron-beam codeposition of the elements to form certain high critical temperature superconducting materials, in particular A-15 compounds, has proven to be very useful in research directed at understanding and improving their superconducting properties. This work has used the close control of three or more evaporant sources to reproducibly make specimens that permit studies across selected regions of composition and phase space. The effect of composition and phase, together with the temperature and rate of deposition, on the growth morphology and superconducting properties has been studied. The superconducting properties measured include the critical temperature, ac loss, critical current density, and tunnel junction characteristics. The particular compounds studied include Nb_3Sn, Nb_3Ge, and V_3Si.
Status of nonsilicon photovoltaic solar cell research
Energy Technology Data Exchange (ETDEWEB)
The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.
1980-01-01
Schottky barrier modulation on silicon nanowires
Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.
2007-03-26
International Nuclear Information System (INIS)
This report is the result of field work performed at the former White Point Nike Missile Site, San Pedro, California. The Hazardous Waste Remedial Actions Program tasked the Oak Ridge National Laboratory Pollutant Assessments Group in Grand Junction, Colo., with this project. The objective was to determine whether or not radioisotopes possibly associated with past Department of Defense (DOD) operations were present and within accepted background levels. The radiation survey was accomplished by performing three independent radiation surveys, both outdoors and indoors, and random soil sampling. Initially, the site was land surveyed to develop a grid block system. A background radiation investigation was performed out in the San Pedro area.
Energy Technology Data Exchange (ETDEWEB)
This book presents the proceedings of a conference dedicated to the design and operation of pipework in all its aspects, involving both metallic and non-metallic materials. Topics considered include a study of single mitre pipe bends using the finite element method; tests to failure of GRP pipe bends under in-plane flexural loading; finite element stress analysis of an equal diameter branch pipe intersection subjected to internal pressure and in-plane moment loadings; finite element stress analysis of extruded outlet tee junctions; design of pipework on the British PWR; a review of advanced remanent life methods for pipes operating in the creep range; pipe whip analysis and design; damping values for piping systems; pipework snubbers based on electro-rheological fluids; and the seismic design of piping systems in the flexible range.
1985-01-01
Particle and X-ray damage in pn-CCDs
Energy Technology Data Exchange (ETDEWEB)
The fully depleted pn-junction charge coupled device (pn-CCD) has been developed as a detector for X-ray imaging and high-resolution spectroscopy for the X-ray satellite missions XMM and ABRIXAS. If the detector is exposed to a particle radiation environment, the energy resolution is degraded due to charge transfer losses and a dark current increase. In a first experiment, prototype devices were irradiated with 10 MeV protons. After completion of the detector development, the proton irradiation was repeated for a quantitative study of the radiation damage, relevant for the satellite missions. The irradiation test was extended by a 5.5 MeV {alpha}-particle and a 6 keV X-ray exposure of the pn-CCD, including the CAMEX preamplifier chip.
2000-01-11
International Nuclear Information System (INIS)
Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)
2008-12-01
Optimal Dynamical Range of Excitable Networks at Criticality
A recurrent idea in the study of complex systems is that optimal information processing is to be found near bifurcation points or phase transitions. However, this heuristic hypothesis has few (if any) concrete realizations where a standard and biologically relevant quantity is optimized at criticality. Here we give a clear example of such a phenomenon: a network of excitable elements has its sensitivity and dynamic range maximized at the critical point of a non-equilibrium phase transition. Our results are compatible with the essential role of gap junctions in olfactory glomeruli and retinal ganglionar cell output. Synchronization and global oscillations also appear in the network dynamics. We propose that the main functional role of electrical coupling is to provide an enhancement of dynamic range, therefore allowing the coding of information spanning several orders of magnitude. The mechanism could provide a microscopic neural basis for psychophysical laws.
2006-01-01
British Library Electronic Table of Contents (United Kingdom)
The cover picture shows the fertile combination of synthetic chemistry and experimental physics, both permanently making central contributions to hot scientific topics in spite of being classical scientific disciplines with long-standing traditions. The displayed scientist struggles with the synthesis of cruciform structures (displayed on the black board) for single-molecule-transport investigations in a mechanically controlled break junction setup (sketched in the inset at the upper right corner). More information on the design and synthesis of the cruciform structures, such as their immobilization experiments, is found in the article by M. Calame, M. Mayor et al. on p. 833 ff. Serafin Pazdera is greatly acknowledged for the cover artwork.
2010-01-01
Observation of 77 K staircase I-V characteristics in 2DEG's irradiated by a focused ion beam
International Nuclear Information System (INIS)
Staircase current-voltage (I-V) characteristics, observed at 77 K in narrow 2DEG channels irradiated by a single line scan of a focused ion beam (FIB), is reported in detail. These staircases are interpreted as evidence of single electron tunneling through a naturally occurring specific Coulomb island in the random potential fluctuations created by FIB damage. Clear comparison is made between the I-V's taken from wide channels and those from narrow channels. Based on orthodox calculations of the I-V characteristics, it is shown that highly asymmetric tunnel junctions are needed to explain our data. This is consistent with the random nature of the potential landscape in the FIB damaged region. (author).
A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).
1977-01-01
British Library Electronic Table of Contents (United Kingdom)
A 46-year-old man was referred to us after he presented to his local physician complaining of difficulty eating. Upper gastrointestinal endoscopy revealed a tumor at the esophagogastric junction (EGJ), and moderately differentiated adenocarcinoma was diagnosed from the biopsy findings. Computed tomography (CT) showed apparent enlargement of the pretracheal lymph nodes, the lymph nodes around the bilateral recurrent laryngeal nerves, and the lower thoracic paraesophageal lymph nodes, confirming metastasis. Since the disease was far advanced esophagogastric cancer with marked lymph node metastases throughout the mediastinum, curative resection would have been unlikely. Thus, he was commenced on systemic chemotherapy with cisplatin (90 mg/body, day 8) + S-1 (120 mg/body/day, given for 3 weeks...
2011-01-01
Influence of the X-ray radiation on the lifetime of carriers in the p-n junctions of Si and Ge
International Nuclear Information System (INIS)
Lifetime of minority charae carriers in the Si and Ge p-n unctions has been measured by pulse method of conductivity modulation of base. Its dependence on the X-ray radiation dose has been investigated. Dependence of current transmission coefficients on the dose has been measured and their sharp decrease at low doses and the following saturation at high doses have been observed. Linear dependence of lifetime on X-ray radiation dose has been obtained. Resulting from the comparison of regularities of the change of lifetime due to current characteristics, it has been shown that X-ray radiation leads to the formation of the surface defects, influencing the change of current characteristics as well as to stationary structural defects, causing the decrease of lifetime of the charge carriers with the increase of X-ray radiation dose.
International Nuclear Information System (INIS)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.
2002-01-01
Improving functional esophageal surgery with a ?smart? bougie: endoflip
British Library Electronic Table of Contents (United Kingdom)
Background An emerging imaging tool, the functional lumen imaging probe (Endoflip; Crospon Ltd, Galway, Ireland), provides a real-time measurement of esophagogastric junction (EGJ) capacity and diameter, which would be of particular interest in functional esophageal surgery such as Heller myotomy and antireflux procedures. This study aimed to demonstrate the intraoperative use of endoflip in the treatment of achalasia and gastroesophageal reflux disease (GERD). Methods In the first case, Heller myotomy was performed under endopflip guidance, for persistent dysphagia after failed endoscopic dilatation. In the second case, the endoflip was used to calibrate a Nissen fundoplication. With the patient under general anesthesia, the endoflip catheter was inserted orally and positioned to straddle...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. In this paper we compare its optical and electrical characteristics with the two more common profiles: the U- and V-shapes. As predicted by the simulations, the new profile combines the advantages of both profiles. Like the V-shape, the exponential shape reduces the amount of Ge in the i-layer, decreasing both the space charge defect density inside the i-layer and the recombination losses. It also improves the electric field. At the same time, the exponential shape generates the same current density as the U-shape.
2002-04-01
High-performance concentrator tandem solar cells based on IR-sensitive bottom cells
Energy Technology Data Exchange (ETDEWEB)
Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).
1991-05-01
High energy heavy ion irradiation in semiconductors
Energy Technology Data Exchange (ETDEWEB)
Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy ({approx}100 MeV) heavy ions of Au{sup 7+} (gold) and Si{sup 7+} (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of {approx}10{sup 12}-10{sup 13} ions/cm{sup 2}. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.
1999-07-02
High concentration low wattage solar arrays and their applications
Energy Technology Data Exchange (ETDEWEB)
Midway Labs currently produces a 335x concentrator module that has reached as high as 19{percent} active area efficiency in production. The current production module uses the single crystal silicon back contact SunPower cell. The National Renewable Energy Lab has developed a multi junction cell using GalnP/GaAs technologies. The high efficiency ({gt}30{percent}) and high cell voltage offer an opportunity for Midway Labs to develop a tracking concentrator module that will provide 24 volts in the 140 to 160 watt range. This voltage and wattage range is applicable to a range of small scale water pumping applications that make up the bulk of water pumping solar panel sales. {copyright} {ital 1997 American Institute of Physics.}
1997-02-01
Ge/Si nanowire mesoscopic Josephson junctions
The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in semiconductor-superconductor hybrid ...
2006-01-01
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
Evaluation of a commercial MRSA assay when multiple MRSA strains are causing epidemics
British Library Electronic Table of Contents (United Kingdom)
Rapid and reliable diagnostic methods are needed to control methicillin-resistant Staphylococcus aureus (MRSA) transmission. We studied the BD GeneOhm? MRSA Assay which is based on one specific amplification product at the junction of the right extremity sequence of the staphylococcal cassette chromosome mec (SCCmec) and the chromosomal sequence of orfX of S. aureus. The test was applied on 95 clinical isolates in Finland: 83% were positive. The isolates giving negative results represented several pulsed-field gel electrophoresis (PFGE) types and harboured SCCmec types IV, V, VI or were new types with different combinations of ccr genes.
2009-01-01
International Nuclear Information System (INIS)
The effects of intradot electron-electron interaction on the photon-assisted Andreev tunneling of a superconductor/carbon-nanotube/superconductor system are studied by using nonequilibrium Green's function technique. The inverse supercurrent reflecting the #pi#-junction transition emerges in the spin-split energy-levels regime polarized by the Coulomb interaction. For the positive tunneling case, the supercurrent reaches its maximum when the spin-degenerate energy-levels are nearest to the Fermi surface. Conversely, for the negative tunneling case, the supercurrent reaches its maximum when two split energy-levels are symmetric with respect of the Fermi surface. The sign and the amplitude of the Andreev tunneling depend distinctly on the energy-level spacing tuned by photon-assisted tunneling. In order to fully understand the transport characteristics, the current-carrying density of states are investigated, which clearly shows the enhancement, suppression or even ...
2007-01-01
Design and fabrication of large ultra-thin PIN detector with membrane stress deviation
Energy Technology Data Exchange (ETDEWEB)
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.
2010-09-15
Comparison between two different designs in the AC voltage measurement
British Library Electronic Table of Contents (United Kingdom)
In this paper, a comparison is done between two different techniques in measuring the AC voltage. The first technique is the single junction thermal voltage converters (SJTVC) which consist of one thermal element (TE) which its output e.m.f. in the range of 7-12mV and the other is the new designed thermal voltage converters which consist of a number of TEs connected in parallel, series and series/parallel to increase their output e.m.f. (becomes in the range of 35-51mV). The effect of increasing the output e.m.f. is studied in this paper through evaluating the uncertainty budget and proved that its increase has a great effect on the accuracy and the uncertainty of the AC voltage measurement.
2011-01-01
Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation
Energy Technology Data Exchange (ETDEWEB)
The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.
2005-08-01
Ceramic linings beat coal plant's abrasion/corrosion problems
Energy Technology Data Exchange (ETDEWEB)
A combination of erosion and corrosion at the Victoria Junction coal preparation plant in Sydney, Nova Scotia was causing serious problems. Schedule 80 mild steel pipes were starting to fail as well as some quarter-inch steel plates in the lauders and chutes. Some corrosion tests were carried out and the high chloride level in the process water was felt to be the single most important contribution to the corrosion problem. Cast basalt was selected as a solution to the pipe wear problem. Three different types of abrasion/corrosion-resistant tiling - basalt tiles, kalceram tiles and ceramic tiles were well suited to the chloride conditions at this plant.
1985-07-01
Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
Energy Technology Data Exchange (ETDEWEB)
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
1997-12-01
Asphalt emulsion sealing of uranium mill tailings. 1980 annual report
International Nuclear Information System (INIS)
Studies of asphalt emulsion sealants conducted by the Pacific Northwest Laboratory have demonstrated that the sealants are effective in containing radon and other potentially hazardous material within uranium tailings. The laboratory and field studies have further demonstrated that radon exhalation from uranium tailings piles can be reduced by greater than 99% to near background levels. Field tests at the tailings pile in Grand Junction, Colorado, confirmed that an 8-cm admix seal containing 22 wt% asphalt could be effectively applied with a cold-mix paver. Other techniques were successfully tested, including a soil stabilizer and a hot, rubberized asphalt seal that was applied with a distributor truck. After the seals were applied and compacted, overburden was applied over the seal to protect the seal from ultraviolet degradation.
Application of asphalt emulsion seals to uranium mill tailings
International Nuclear Information System (INIS)
Studies of asphalt emulsion sealants have demonstrated that the sealants are effective in containing radon and other potentially hazardous material within uranium tailings. The laboratory and field studies have further demonstrated that radon exhalation from uranium tailings piles can be reduced by greater than 99% to less than background levels. Field tests at the tailings pile in Grand Junction, Colorado confirmed that an 8-cm admix seal containing 22 wt % asphalt could be effectively applied with a cold-mix paver. Other techniques were successfully tested, including a soil stabilizer and a hot, rubberized asphalt seal that was applied with a distributor truck. After the seals were applied and conpacted, overburden was applied over the seal to protect the seal from ultraviolet degradation. 14 figures.
Energy Technology Data Exchange (ETDEWEB)
The US Department of Energy (DOE) Office of Remedial Action and Waste Technology established the Technical Measurements Center (TMC) at the DOE Grand Junction Projects Office (GJPO) in Grand Junction, Colorado, to standardize, calibrate, and compare measurements made in support of DOE remedial action programs. Outdoor radon concentration measurements were made by the TMC in Shiprock, New Mexico, to compare two different methods of measuring radon in an attempt to determine the feasibility of using passive alpha-track detectors to assess the adequacy of remedial action undertaken at the Shiprock uranium mill tailings pile. The results of the first three quarters of monitoring have been detailed in previous reports. An analysis of the data from the fourth quarter of monitoring at Shiprock reveals a somewhat poorer correlation between the two sets of measurements than was seen in the third quarter of this study, but a better correlation than was ...
1988-08-01
The helical tomotherapy thread effect
International Nuclear Information System (INIS)
Inherent to helical tomotherapy is a dose variation pattern that manifests as a 'ripple' (peak-to-trough relative to the average). This ripple is the result of helical beam junctioning, completely unique to helical tomotherapy. Pitch is defined as in helical CT, the couch travel distance for a complete gantry rotation relative to the axial beam width at the axis of rotation. Without scattering or beam divergence, an analytical posing of the problem as a simple integral predicts minima near a pitch of 1/n where n is an integer. A convolution-superposition dose calculator (TomoTherapy, Inc.) included all the physics needed to explore the ripple magnitude versus pitch and beam width. The results of the dose calculator and some benchmark measurements demonstrate that the ripple has sharp minima near p=0.86(1/n). The 0.86 factor is empirical and caused by a beam junctioning of the off-axis dose profiles which differ from the axial profiles as well ...
2005-05-01
New materials for future generations of III-V solar cells
Energy Technology Data Exchange (ETDEWEB)
Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a depletion-width-enhanced ...
1999-03-01
Energy Technology Data Exchange (ETDEWEB)
Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, ...
1992-12-01
Wide bandgap collector III-V double heterojunction bipolar transistors
International Nuclear Information System (INIS)
This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ...
Understanding and controlling transient enhanced dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials ...
1995-12-31
Understanding and controlling transient enhanced dopant diffusion in silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials ...
Transient analysis of blowdown thrust force under PWR LOCA conditions
Energy Technology Data Exchange (ETDEWEB)
The analytical results of blowdown characteristics and its thrust force were compared with the experiment, which were performed as pipe whip tests under the PWR LOCA conditions on the hypothetical accident of guillotine break of pipes. The blowdown thrust force was obtained by the integral momentum equation about single-phase flow, homogeneous and separated two-phase flow, assuming critical pressure at the exit if critical flow condition was satisfied. The following results are obtained: (1) The node-junction method is useful for the analysis of water hammer phenomena and of the blowdown thrust force. (2) The Henry-Fauske model for subcooled critical flow is effective for the analysis of the maximum thrust force under the PWR LOCA conditions. The jet thrust parameter of analysis and experiment is 1.08. (3) The thrust parameter of saturated blowdown has the same one with the value under pressurized condition when the stagnant pressure is chosen as the saturated one. ...
1982-09-01
Transient analysis of blowdown thrust force under PWR LOCA
Energy Technology Data Exchange (ETDEWEB)
The analytical results of blowdown characteristics and thrust forces were compared with the experiments, which were performed as pipe whip and jet discharge tests under the PWR LOCA conditions. The blowdown thrust forces were obtained by Navier-Stokes momentum equation for a single-phase, homogeneous and separated two-phase flow, assuming critical pressure at the exit if a critical flow condition was satisfied. The following results are obtained: (1) The node-junction method is useful for both the analyses of the blowdown thrust force and of the water hammer phenomena. (2) The Henry-Fauske model for subcooled critical flow is effective for the analysis of the maximum thrust force under the PWR LOCA conditions. The jet thrust parameter of the analysis and experiment is equal to 1.08. (3) The thrust parameter of saturated blowdown has the same one with the value under pressurized condition when the stagnant pressure is chosen as the saturated one. (4) The dominant ...
1983-04-01
Subcellular distribution of ryanodine receptors in the cardiac muscle of carp (Cyprinus carpio).
We examined the subcellular localization of ryanodine receptors (RyR) in the cardiac muscle of carp using biochemical, immunohistochemical, and electron microscopic methods and compared it with those of rats and guinea pigs. To achieve this goal, an anti-RyR antibody was newly raised against a synthetic peptide corresponding to an amino acid sequence that was conserved among all sequenced RyRs. Western blot analysis using this antibody detected a single RyR band following the SDS-PAGE of sarcoplasmic reticulum (SR) membranes from carp atrium and ventricle as well as from mammalian hearts and skeletal muscles. The carp heart band had slightly greater mobility than those of mammalian hearts. Although immunohistochemical staining showed evident striations corresponding to the Z lines in longitudinal sections of mammalian hearts, clusters of punctate staining, in contrast, were distributed ubiquitously throughout carp atrium and ventricle. Electron microscopic images of the carp myocardium ...
2003-06-12
Energy Technology Data Exchange (ETDEWEB)
As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and transient enhanced ...
1998-07-01
Energy Technology Data Exchange (ETDEWEB)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n ...
1997-11-01
International Nuclear Information System (INIS)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n junction formation, TED is ...
Energy Technology Data Exchange (ETDEWEB)
Systematic studies of the NdFeAsOF superconducting energy gap using point-contact Andreev-reflection (PCAR) spectroscopy are presented. At low temperatures the PCAR conductance spectra show a pair of gap-like peaks at about {+-} (4-7) mV and in most cases also a pair of humps at around {+-} 10 mV. Fits to the s-wave two-gap model of the PCAR conductance allowed to determine two superconducting energy gaps in the system. However, the energy-gap features disappear at T* = 15-20 K, much below the particular T{sub c} of the junction under study. At T* a zero-bias conductance (ZBC) peak emerges, which at higher temperatures usually overwhelms the spectrum with an intensity significantly higher than the conductance signal at lower temperatures. Possible causes of this unexpected temperature effect are discussed. In some cases the conductance spectra show just a reduced conductance around the zero-bias voltage, the effect persisting well above the bulk transition ...
2009-01-15
International Nuclear Information System (INIS)
Non-Hodgkin lymphoma is a common feature of AIDS. Approximately 30-40% of these tumors exhibit clinical features suggestive of endemic Burkitt lymphoma: they are aggressive malignancies that occur in association with Epstein-Barr virus infection, they arise in the setting of immunosuppression, and they carry t(8;14) translocations without detectable rearrangement of the MYC oncogene. To understand the molecular basis of these parallels, the authors analyzed a case of Epstein-Barr-positive AIDS-associated undifferentiated lymphoma. Southern blots show that the tumor exhibits immunoglobulin joining segment rearrangement but no rearrangement of the MYC oncogene. Cloning of the rearranged joining segment allowed the isolation of recombinant clones encompassing the translocation breakpoint, and sequencing of the translocation junction disclosed that the breakpoint is situated 7 base pairs from the chromosome 14 site involved in a previously described endemic Burkitt ...
Energy Technology Data Exchange (ETDEWEB)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for ...
1985-01-01
International Nuclear Information System (INIS)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for the boron ...
International Nuclear Information System (INIS)
The purpose of this study was to determine the optimal technique for delivering postoperative radiotherapy for vulvar cancer and other tumors requiring treatment of the inguinal nodes. This project compared tumor coverage and normal tissue sparing for the 5 main radiotherapy techniques that are used to treat vulvar cancer. The intensity-modulated radiation therapy (IMRT) plan was undesirable because it resulted in an excessive dose to portions of the central pelvic structures. The photon thunderbird with skin match was unacceptable because it underdosed a portion of the groin region. The electron thunderbird was ideal for thin patients but was not applicable for most patients because of excessive dose to the skin and subcutaneous tissues. The photon through-and-through and the photon thunderbird with deep match were acceptable in most situations. In thin patients, where the depth of the inguinal vessels is less than 3 cm, the electron thunderbird is the technique of choice. In the ...
Energy Technology Data Exchange (ETDEWEB)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.
2002-01-01
Energy Technology Data Exchange (ETDEWEB)
This document describes the geology and hydrogeology at the former Advanced Coal Liquefaction Research and Development (ACLR&D) facility in Wilsonville, Alabama. The work was conducted by personnel from the Oak Ridge National Laboratory Grand Junction office (ORNL/GJ) for the U.S. Department of Energy (DOE) Pittsburgh Energy Technology Center (PETC). Characterization information was requested by PETC to provide baseline environmental information for use in evaluating needs and in subsequent decision-making for further actions associated with the closeout of facility operations. The hydrogeologic conceptual model presented in this report provides significant insight regarding the potential for contaminant migration from the ACLR&D facility and may be useful during other characterization work in the region. The ACLR&D facility is no longer operational and has been dismantled. The site was characterized in three phases: the first two phases were an ...
1996-09-01
High-efficiency GaAs solar cells on mm and sub-mm grain-size polycrystalline Ge substrates
Energy Technology Data Exchange (ETDEWEB)
GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on sub-mm grain-size poly-Ge. We have also ...
1997-02-01
Energy Technology Data Exchange (ETDEWEB)
Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.
1982-01-01
International Nuclear Information System (INIS)
We present an approach for fabrication of intentionally positioned epitaxial InAs QDs in a micron sized light emitting diode. For site-selective growth, a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation technology in an all-ultra-high-vacuum (UHV) setup has been employed. Single dot occupancy of almost 55 % on FIB patterned nano-depressions was successfully achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding these QDs in the intrinsic part of a GaAs-based micron sized p-i-n junction device. Few or single dot are expected to be electrically addressed in these devices. We report results from electroluminescence (EL) measurement which proves the single dot characteristics of our device. The EL spectra consist of sharp emission lines and their dependence on injection current shows linear behavior for exciton and quadratic ...
2010-03-21
An experimental investigation of natural convection heat transfer from a commercially available semiconductor device package is presented. The package was centrally mounted on a ceramic substrate. The package-substrate assembly formed one surface of a dielectric-filled cubical enclosure of aspect ratio one. The top surface of the enclosure was maintained at prescribed temperature. Surface temperature measurements were made at various locations on the substrate, the package lid, as well as the chip center. These measurements are reported for three dielectric fluids and three enclosures top surface temperatures, both with the substrate oriented horizontally as well as vertically. The results indicate that the maximum input power without exceeding a chip junction temperature of 80 C is 2.58 watts with FC-75 as the cooling fluid and the upper boundary maintained at 15 C. This is significantly larger than the maximum of 1.21 watts allowable with the natural convection ...
1989-09-01
Energy Technology Data Exchange (ETDEWEB)
Blood flow changes in the periodontal ligament (PDL) were measured indirectly by monitoring the local clearance of /sup 125/I/sup -/ during electric sympathetic nerve stimulation or close intra-arterial infusions of either noradrenaline (NA) or adrenaline (ADR) before and after administration of phentolamine (PA), phenoxybenzamine (PBZ) or Idazoxan (RX). At the doses used in the present study, PA was the only antagonist that significantly reduced the blood flow decrease seen on activation of sympathetic fibers, although PBZ also reduced this response. Idazoxan, however, did not induce the consistent effect on blood flow decreases seen on sympathetic activation. All three ..cap alpha..-adrenoceptor antagonists almost abolished the effects of exogenously administered NA and ADR. The results suggest the presence of functional post-junctional adrenoceptors of both the ..cap alpha.. 1 and ..cap alpha.. 2 subtypes in the sympathetic regulation of the blood flow in the ...
1988-01-01
Current trends in ion implantation
Energy Technology Data Exchange (ETDEWEB)
As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these ...
2001-07-01
The role of intracellular Ca2+ (Ca2+i) on hematopoiesis was investigated in long term bone marrow cultures using cytokines and agonists of P2 receptors. Cytokines interleukin 3 and granulocyte/macrophage colony stimulator factor promoted a modest increase in Ca2+i concentration ([Ca2+]i) with activation of phospholipase Cgamma, MEK1/2, and Ca2+/calmodulin kinase II. Involvement of protein kinase C was restricted to stimulation with interleukin 3. In addition, these cytokines promoted proliferation (20 times) and an increase in the Gr-1(-)Mac-1+ population with participation of gap junctions (GJ). Nevertheless ATP, ADP, and UTP promoted a large increase in [Ca2+]i, moderate proliferation (6 times), a reduction in the primitive Gr-1(-)Mac-1(-)c-Kit+ population, and differentiation into macrophages without participation of GJ. It is likely that Ca2+i participates as a regulator of hematopoietic signaling: moderate increases in [Ca2+]i would be related to ...
2008-09-05
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
Energy Technology Data Exchange (ETDEWEB)
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in ...
1999-04-01
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
International Nuclear Information System (INIS)
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. copyright 1999 ...
1999-04-01
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
Energy Technology Data Exchange (ETDEWEB)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced diffusion, and the ...
1991-01-01
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
International Nuclear Information System (INIS)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced diffusion, and the ...
Angular sensitivity distribution of detectors for BNCT
Energy Technology Data Exchange (ETDEWEB)
The research on the therapy of brain tumors and others by the thermal neutron irradiation using research reactors is to kill tumor cells by accumulating boron at a tumor part, and using {alpha} particles and {sup 7}Li generated by {sup 10}B(n, {alpha}){sup 7}Li reaction of thermal neutrons, which is known as boron neutron capture therapy (BNCT). In Japan Atomic Energy Research Institute, the medical irradiation facility was installed in the thermal neutron column of the JRR-2, and as of March, 1994, 22 cases of irradiation have been carried out. In order to monitor the variation of thermal neutron flux during irradiation, the real time measurement using a simultaneous monitor is carried out, but there is the variation of measured values in the Si semiconductor, p-n junction detector possibly due to its direction dependence. The experiment was carried out to quantity the direction dependence of the detector by using the neutron radiography facility at the JRR-3M. Si ...
1995-03-01
Analysis of the VVER-440 reactor steam generator secondary side with the RELAP5/MOD3 code
Energy Technology Data Exchange (ETDEWEB)
Nuclear Engineering Laboratory of the Technical Research Centre of Finland has widely used RELAP5/MOD2 and -MOD3 codes to simulate horizontal steam generators. Several models have been developed and successfully used in the VVER-safety analysis. Nevertheless, the models developed have included only rather few nodes in the steam generator secondary side. The secondary side has normally been divided into about 10 to 15 nodes. Since the secondary side at the steam generators of VVER-440 type reactors consists of a rather large water pool, these models were only roughly capable to predict secondary side flows. The paper describes an attempt to use RELAP5/MOD3 code to predict secondary side flows in a steam generator of a VVER-440 reactor. A 2D/3D model has been developed using RELAP5/MOD3 codes cross-flow junctions. The model includes 90 volumes on the steam generator secondary side. The model has been used to calculate steady state flow conditions in the secondary ...
1993-12-31
Analysis of the VVER-440 reactor steam generator secondary side with the RELAP5/MOD3 code
International Nuclear Information System (INIS)
Nuclear Engineering Laboratory of the Technical Research Centre of Finland has widely used RELAP5/MOD2 and -MOD3 codes to simulate horizontal steam generators. Several models have been developed and successfully used in the VVER-safety analysis. Nevertheless, the models developed have included only rather few nodes in the steam generator secondary side. The secondary side has normally been divided into about 10 to 15 nodes. Since the secondary side at the steam generators of VVER-440 type reactors consists of a rather large water pool, these models were only roughly capable to predict secondary side flows. The paper describes an attempt to use RELAP5/MOD3 code to predict secondary side flows in a steam generator of a VVER-440 reactor. A 2D/3D model has been developed using RELAP5/MOD3 codes cross-flow junctions. The model includes 90 volumes on the steam generator secondary side. The model has been used to calculate steady state flow conditions in the secondary ...
1992-09-29
A novel photodiode made of hybrid organic/inorganic nanocomposite
International Nuclear Information System (INIS)
Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO_3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H_3PO_4-SrTiO_3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height #phi#_b value for the diode was found to be 0.56 eV. The Ag/Pani-H_3PO_4-SrTiO_3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage V_o_c of 2.49 V, and short-circuit current I_s_c of 5.6 mA under light illumination #lambda# = 460 nm. The conversion efficiency was found to be 5.2%. It is evaluated that the ...
2009-08-07
The effects of energy non-monochromaticity of "1"1B ion beams on "1"1B diffusion
International Nuclear Information System (INIS)
We have shown that energy contamination introduced by ion beam deceleration technology that is used to increase the beam currents available for low energy boron implants, can affect fabricated junctions adversely. A 4 keV "1"1B beam is extracted and retarded by a potential of -3.5 keV for 0.5 keV "1"1B implantation, or by a potential of -3.8 keV for 0.2 keV "1"1B implantation. Intentional beam contamination was introduced by turning off the retarding potential to allow the 4 keV "1"1B ions to irradiate Si wafers directly. The percentage of contamination, at levels of 0.1%, 0.2% and 0.3% was introduced. Rapid thermal annealing of all the implanted samples was performed under N_2 ambient at 1050 deg. C for 1 s. The dopant tail profiles themselves are not significant if the contamination levels are low. However, the much higher damage level coming from high energy contamination increases the transient enhanced diffusion of "1"1B more than proportionately, resulting in ...
2005-08-01
Simulation of dopant diffusion and activation during flash lamp annealing
International Nuclear Information System (INIS)
A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was performed at various peak temperatures in a Mattson Millios"T"M fRTP"T"M system. The measured wafer temperature ...
2008-12-05
Regulation of NMDA and AMPA receptors during the maturation phase of chicken brain development
International Nuclear Information System (INIS)
Full text: The maturation of chicken forebrain is protracted and occurs well after synapse formation providing a good model for studying mechanisms of brain maturation. Using microslices from immature (10 day) and adult chicken forebrain prepared after decapitation, we have examined functional properties of NMDA and AMPA receptors by measuring agonist-induced uptake of "4"5Ca"2"+ . The rate and extent of NMDA induced "4"5Ca"2"+ accumulation decreased during maturation with no change in EC_5_0. The rate and extent of the AMPA induced response also decreased with a 60-fold increase in EC_5_0. However, the total NMDA receptor content did not change as indicated by 3 H-MK801 binding and NR1 immunoreactivity in P2 fractions. Similarly, there was no change in the B_m_a_x of "3H-AMPA, though there was a two-fold increase in K_D, and little or no change in the immunoreactivity in GluR1, 2, 2/3 or 4. These results suggest that it is the regulation of receptors, their subunit composition and/or ...
2002-02-04
Plasma-based ion implantation and deposition: A review of physics,technology, and applications
Energy Technology Data Exchange (ETDEWEB)
After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. ...
2005-05-16
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {l_brace}311{r_brace} defects during Ostwald ripening with an ...
1997-05-01
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# defects during Ostwald ripening with an activation ...
Energy Technology Data Exchange (ETDEWEB)
Iron overload has been described in patients undergoing chronic hemodialysis. The present study was undertaken to evaluate a rapid, noninvasive method for determination of skin iron by the technique of diagnostic x-ray spectrometry (DXS). Thirty-five patients receiving chronic hemodialysis treatment entered the study and were compared with 25 normal controls. Since pathological skin iron deposition occurs mainly at the dermal-epidermal junction in the basal cells of the epidermis, measurements were made in the thenar eminence representing mainly epidermal tissue (FeE), and in the forearm representative mainly of dermis (FeD). The mean +/- SD FeE iron concentrations were equivalent to 14.5 +/- 8.8 and 18.2 +/- 10.2 parts per million wet weight tissue (ppm) and both were significantly higher than in normal controls in which they averaged 9.2 +/- 2.5 ppm (P less than 0.005) and 10.2 +/- 3.2 ppm (P less than 0.001), respectively. There was significant positive ...
1988-07-01
1 Candoxin (MW 7334.6), a novel toxin isolated from the venom of the Malayan krait Bungarus candidus, belongs to the poorly characterized subfamily of nonconventional three-finger toxins present in Elapid venoms. The current study details the pharmacological effects of candoxin at the neuromuscular junction. 2 Candoxin produces a novel pattern of neuromuscular blockade in isolated nerve-muscle preparations and the tibialis anterior muscle of anaesthetized rats. In contrast to the virtually irreversible postsynaptic neuromuscular blockade produced by curaremimetic alpha-neurotoxins, the neuromuscular blockade produced by candoxin was rapidly and completely reversed by washing or by the addition of the anticholinesterase neostigmine. 3 Candoxin also produced significant train-of-four fade during the onset of and recovery from neuromuscular blockade, both, in vitro and in vivo. The fade phenomenon has been attributed to a blockade of putative presynaptic nicotinic ...
2003-06-01
Molecular dynamics studies of silicon ion implantation
Energy Technology Data Exchange (ETDEWEB)
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage ...
1994-12-31
Defect engineering via ion implantation to control B diffusion in Si
International Nuclear Information System (INIS)
The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the benefit of the cavity ...
2009-03-15
International Nuclear Information System (INIS)
We review the current status of Andreev reflection spectroscopy on the heavy fermions, mostly focusing on the case of CeCoIn5, a heavy-fermion superconductor with a critical temperature of 2.3 K. This is a well-established technique to investigate superconducting order parameters via measurements of the differential conductance from nanoscale metallic junctions. Andreev reflection is clearly observed in CeCoIn5 as in other heavy-fermion superconductors. Considering the large mismatch in Fermi velocities, this observation seemingly appears to disagree with the Blonder-Tinkham-Klapwijk (BTK) theory. The measured Andreev signal is highly reduced to the order of maximum ?13% compared to the theoretically predicted value (100%). The background conductance exhibits a systematic evolution in its asymmetry over a wide temperature range from above the heavy-fermion coherence temperature down to well below the superconducting transition temperature. Analysis of the ...
2009-03-11
Energy Technology Data Exchange (ETDEWEB)
Purpose of this work is to evaluate the effectiveness and role of CT in blunt diaphragmatic injuries by reviewing our 8-year experience. It is reviewed the preoperative CT findings of 35 patients with surgically confirmed diaphragmatic rupture. Surgical repair was performed in the acute setting (within 12 hours of trauma) in 22 cases, and late (8 months-5 years) in 13 cases. Twenty-eight patients (80%) were examined with conventional CT and 7 (20%) with Helical CT. Of the 13 patients examined long after trauma, the left hemi diaphragm was ruptured in 12 cases (with visceral herniation in 4), and the right hemi diaphragm in 1, with no herniation. The diaphragmatic rent was found in the dome (15 cases, 43%), muscolotendinous junction (11 cases, 31%), muscular portion (8 cases, 23%), and at the muscular attachments on the ribs (1 case, 3%). As for the site of diaphragmatic injury, CT never depicted the diaphragmatic rent in the dome and at the muscolotendinous ...
2000-02-01
The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...
1992-01-01
Study of silicon damage caused by ultra-low energy boron implantation
International Nuclear Information System (INIS)
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as well as TRIM ...
Monthly report of activities: APRIL 1, 1969
This is the first of a series of monthly reports summarizing the status of the work of the National Accelerator Laboratory. This first report will cover developments since the publication of the Design Report in January. Authorization hearings were held before the Joint Committee on Atomic Energy on February 21, 1968. Dr. Wilson described the plans and designs of the Laboratory. The present plan of the Laboratory is that the Village of Weston will be utilized for office, laboratory, and shop space during construction. The Laboratory business office is already occupying several houses. The linac section is occupying three houses for offices and construction of an 8,000 sq ft laboratory building for linac work is almost complete. Another house is being used and a 4,500 sq ft inflatable building is being constructed for model-magnet and vacuum testing. Other temporary buildings will be constructed for use by other sections. We plan to move into the village as rapidly as is feasible and it ...
1968-04-01
Computed tomography whole body imaging in multi-trauma: 7 years experience
International Nuclear Information System (INIS)
AIM: To assess the impact of the introduction of a computed tomography (CT) imaging protocol for multi-trauma patients on the workload, overall diagnostic yield, and effect on detection of cervical spine injury and pneumothorax. METHOD: Between February 1997 and April 2004, all patients presenting acutely to the Emergency Department (ED) with haemodynamically stable trauma (Abbreviated Injury Scale 3 or more) involving more than two body systems were imaged with a comprehensive pre-set helical CT protocol (including non-contrast head, cervical spine: cranio-cervical and cervico-thoracic junctions; and oral and intravenous contrast-enhanced thoracic, abdomen and pelvis) after initial triage and a standard trauma series of radiographs (chest, lateral C-spine and pelvis). Diagnosis of cervical spine fracture and pneumothorax was noted before and after the CT protocol was carried out and findings from all studies were recorded prospectively. RESULTS: Over the 7-year ...
2006-04-01
Characterization of an add-on multileaf collimator for electron beam therapy
Energy Technology Data Exchange (ETDEWEB)
An add-on multileaf collimator for electrons (eMLC) has been developed that provides computer-controlled beam collimation and isocentric dose delivery. The design parameters result from the design study by Gauer et al (2006 Phys. Med. Biol. 51 5987-6003) and were configured such that a compact and light-weight eMLC with motorized leaves can be industrially manufactured and stably mounted on a conventional linear accelerator. In the present study, the efficiency of an initial computer-controlled prototype was examined according to the design goals and the performance of energy- and intensity-modulated treatment techniques. This study concentrates on the attachment and gantry stability as well as the dosimetric characteristics of central-axis and off-axis dose, field size dependence, collimator scatter, field abutment, radiation leakage and the setting of the accelerator jaws. To provide isocentric irradiation, the eMLC can be placed either 16 or 28 cm above the isocentre through ...
2008-02-21
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