British Library Electronic Table of Contents (United Kingdom)

Physicochemical and benthos data were collected from 12 marine monitoring stations in Daya Bay, during 2001-2004. 12 stations in Daya Bay could be grouped into three clusters: cluster I consisted of stations in the southern part of Daya Bay (stations S1, S2 and S6); cluster II consisted of stations in the cage culture areas (stations S3, S4, S5 and S8); cluster III consisted of stations in the southwest, the middle and the northeast of the Bay (stations S7, S9, S10, S11 and S12). Calculation with bivariate correlations between benthos and major physicochemical factors showed that the density of benthos in all stations correlated positively with temperature, DO, pH, NH4-N, SiO3-Si, SiO3-Si /PO4-P and chlorophyll a and was negatively correlated with salinity, Secchi, COD, NO3-N, NO2-N, TIN, ...

International Nuclear Information System (INIS)

Field cage studies were carried out to evaluate the F_1 sterility technique for population suppression of the pink bollworm, Pectinophora gossypiella (Saunders), in cotton. For this purpose, six field cages (1.8 m x 1.8 m x 1.8 m) were placed over cotton seedlings in the field. Five pairs of laboratory reared, untreated adult moths were released in all six cages during the first week of August. In addition, on the same data 100 pairs of adults, following irradiation of the mature pupae at 100 Gy, were released in two cages and 250 such pairs of irradiated adults in two other cages in ratios of 20:1 and 50:1 (irradiated:normal), respectively. The results of per cent larval infestation in the rosette blooms in different field cages indicated that larval infestation in the flowers was significantly lower (4.93%) in cages where the moths were ...

Science.gov (United States)

The total amount of uranium dissolved in seawater at a uniform concentration of 3 mg U/m{sup 3} in the world's oceans is 4.5 billion tons. An adsorption method using polymeric adsorbents capable of specifically recovering uranium from seawater is reported to be economically feasible. A uranium-specific nonwoven fabric was used as the adsorbent packed in an adsorption cage 16 m{sup 2} in cross-sectional area and 16 cm in height. We submerged three adsorption cages in the Pacific Ocean at a depth of 20 m at 7 km offshore of Japan. The three adsorption cages consisted of stacks of 52 000 sheets of the uranium-specific non-woven fabric with a total mass of 350 kg. The total amount of uranium recovered by the nonwoven fabric was >1 kg in terms of yellow cake during a total submersion time of 240 days in the ocean.

Energy Technology Data Exchange (ETDEWEB)

Squeeze film dampers (SFD) are devices utilized to control vibrations of the shafts of high-speed rotating machinery. The SFD - squirrel cage combination is probably the most used system for tuning the stiffness and damping of the supports for rotors installed on ball bearings. Squeeze film dampers are essentially hydrodynamic bearings which contain the ball bearings housings of ball-bearings supported shafts. Consequently, the oil film within the SFD are influenced only by the precession and nutation of the shaft, that is the flow of the oil within the damper is not directly influenced by the spin of the rotor. However, in the classical theory, the flow in the thin film is also governed by the Reynolds equation. In this paper, some of the limits of the classical theory of the SFD are discussed and theoretical and experimental studies, which illustrate the ideas presented herein, are presented as well. The orbits of an unbalanced rotor that is supported by a ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

Samples of austenitic stainless steel AISI 316 were nitrided using the cathodic cage technique with the addition of methane in the nitriding atmosphere. The aim was to study the influence of this technique in reducing the precipitation of chromium nitrite and in improving the wear resistance. The results show that there was a significant improvement in such properties when compared to the results of ionic plasma nitriding. Formation of a double layer, one more internal composed of carbon and another with high nitrogen content, was confirmed by Scanning Electron Microscopy (SEM). The microhardness profile of the layer showed an increase in hardness values and a larger uniformity, while X-ray analysis showed less chromium nitriding precipitation when compared with results obtained for samples treated using ionic plasma nitriding.

CERN Document Server

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO 2 Substrates

Energy Technology Data Exchange (ETDEWEB)

Most chemical reactions in industry and biology are catalytic and play a role at some stage of the processing of about 80% of the goods manufactured in the U.S., yet catalysis is a neglected subject in chemical education. This book integrates the fragmentary treatment accorded the topic until now. It covers, in a unified way, catalysis in solutions, by enzymes, in synthetic polymers within the molecular scale cages of zeolites and other molecular sieves, and on surfaces of inorganic solids. The central ideas are chemical; and principles are illustrated by emphasizing industrial reactions and catalysts.

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi/sub 2/ was formed on amorphous Si substrates at 350 /sup 0/C, while NiSi remained stable on crystalline Si substrates even at 400 /sup 0/C. PtSi reacted with Si to form a metastable Pt/sub 4/Si/sub 9/ phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt/sub 4/Si/sub 9/ was easier on crystalline Si substrates than on amorphous ...

Science.gov (United States)

The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and ...

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

Energy Technology Data Exchange (ETDEWEB)

Audible noise from corona discharge had been identified as one of the most important factors in the design of conductor configurations for high-voltage transmission lines. 500 kV and above. Therefore this paper describes audible noise characteristics of 6 X 480 mm{sup 2} conductor bundle in KEPRI 765 kV Test Line and Corona Cage. Prediction formula for audible(corona) noise on a 765 kV Transmission Line was developed using this results. (author). 4 refs., 4 figs., 4 tabs.

International Nuclear Information System (INIS)

Short communication.

International Nuclear Information System (INIS)

Interaction of Yb-Pd-Si system components is studied, isothermal cross section of this system state diagram at 870 K is constructed. Five new ternary silicides are detected in the system: YbPd_5Si_3, Yb_3Pd_2_0Si_6, YbPd_2Si, YbPd_0_,_6_7Si_1_,_3_3, YbPdSi; the existence of one more -YbPd_2Si_2, earlier known, is confirmed. Crystal structure for all the compounds detected is determined and examined. Data on the materials magnetic properties are obtained. It is assumed that YbPd_2Si, YbPd_2Si_2 and YbPdSi compounds appear to be the Condo-systems. 10 refs., 3 figs., 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

International Science & Technology Center (ISTC)

Development of SHS-technologies for SiC, Si3N4 and Ceramic Composites on Their Basis from Rocks

International Nuclear Information System (INIS)

The transformation of Pd/Si to Pd_2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd_2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd_2Si is formed in the form of islands, which grow as the annealing temperature is increased.

International Nuclear Information System (INIS)

The applicability of in situ, real-time RBS is demonstrated by characterizing the growth of thin Pd_2Si films on Si left angle 111 right angle substrates using isothermal as well as non-isothermal annealing. In contrast to the currently fashionable in situ ramped resistance technique, it is possible to extract the activation energy from a single run with a constant heating rate. The results, which are in excellent agreement with the literature, will be compared for isothermal annealing, fitting an appropriate model for the growth process to data from a single run and a Kissinger-like analysis with different ramp rates. In situ, real-time RBS was also used to study marker motion during CrSi_2 formation in the Si left angle 100 right angle /Pd_2Si/Cr system. It is possible to distinguish between the following mechanisms: (1) CrSi_2 formation via dissociation of ...

British Library Electronic Table of Contents (United Kingdom)

Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.

Energy Technology Data Exchange (ETDEWEB)

The objective of the project was to develop an infiltration material based on SiC that should have improved corrosion resistance and should permit higher operating temperatures. From a variety of tested doping agents, zirconium silicide and molybdenum proved to be the most appropriate agents. The respective infiltration materials permit a combination of advantages of the SSiC with those of the SiSiC. Silicide SiC, analogous to the SiSiC, is almost nonshrinking, and above all is more corrosion-resistant than SiSiC in the alkaline regime, due to the replacement of free silicon by silicide phases. The operating temperature of the molybdenum-base variant is 1600 C. (orig./CB) [Deutsch] Ziel des Vorhabens war die Entwicklung eines Infiltrationswerkstoffes auf SiC-Basis mit verbesserter Korrosionsbestaendigkeit und hoeherer Einsatztemperatur. Aus einer Vielzahl von ...

International Nuclear Information System (INIS)

SiC-AlN and SiC-SiAlON refractory composites were obtained by means of nitridation of the mixtures of silicon carbide (SiC) powder with a broad granulometric distribution and powders of aluminium (Al) and aluminium-silicon (Al-Si) mixtures. The mixtures of the composition Al-25% Si, Al-50% Si and Al-75% Si were previously prepared by means of 'mechanical alloying' technique. Thermodynamic analysis was accomplished in order to evaluate the viability of SiC-SiAlON and SiC-AlN refractories production by the chosen processing method, and the results confirmed viability of such. Investigation of nitridation of Al and Al-Si powder compacts in order to obtain the AlN and #beta#-SiAlON matrix phases of the composite was accomplished by means of differential thermal ...

Energy Technology Data Exchange (ETDEWEB)

The infrared spectrum of the rotovibrational band {ital v}=0{r_arrow}2 of parahydrogen has been observed in the condensed phases down to {ital T}=2 K. In the solid, phonon and roton sidebands exhibit peaks corresponding to those observed in the fundamental. Contributions arising from the reorientation of ortho-H{sub 2} impurities have been detected. The {ital Q}{sub 1}(0)+{ital S}{sub 1}(0) band has been resolved into an asymmetric doublet, and the origin of this latter is discussed. In the liquid phase the observed line shapes include strong translational contributions, and are accounted for by assuming that at short times the excited molecule is encapsulated in the cage of nearest neighbors.

British Library Electronic Table of Contents (United Kingdom)

The laboratory environment existing outside the test situation itself can have a substantial influence on results of some behavioral tests with mice, and the extent of these influences sometimes depends on genotype. For alcohol research, the principal issue is whether genotype-related ethanol effects will themselves be altered by common variations in the lab environment or instead will be essentially the same across a wide range of lab environments. Data from 20 inbred strains were used to reduce an original battery of seven tests of alcohol intoxication to a compact battery of four tests: the balance beam and grip strength with a 1.25g/kg ethanol dose and the accelerating rotarod and open-field activation tests with 1.75g/kg. The abbreviated battery was then used to study eight inbred str...

International Nuclear Information System (INIS)

Anthracene-bis-resorcinol is an interesting molecule as it forms a hydrogen-bonded network when guest molecules with weak polarity are included. Focused ion beam (FIB) was irradiated on a part of its amorphous film with low dose, and the film was exposed to the vapor of guest molecules. From fluorescence and AFM analyses of this film, it was found that no inclusion compound was formed in FIB irradiated area, i.e. FIB irradiation suppresses the ability to form the inclusion compounds. By utilizing this phenomenon, we succeeded in a microfabrication of relief structures consisting of inclusion compounds which has different fluorescence from its surrounding. Morphology, fluorescence, and IR absorption analyses indicated that hydroxyl or resorcin groups are damaged by ion beams, and consequently a formation of hydrogen-bonded networks, which play a role of a lattice caging guest molecules, becomes impossible.

British Library Electronic Table of Contents (United Kingdom)

A series of [60]fullerene-substituted phenylalanine (Baa) and lysine derivatives have been prepared by the condensation of 1,2-(4prime-oxocyclohexano)fullerene with the appropriately protected (4-amino)phenylalanine and lysine, respectively. Conversion of the imine to the corresponding amine is achieved by di-acid catalyzed hydroboration. The reduction of the imine is not accompanied by hydroboration of the fullerene cage. The [70]fullerene phenylalanine derivative has also been prepared as have the di-amino acid derivatives. The compounds were characterized by MALDI-TOF mass spectrometry, UV/Vis spectroscopy, and cyclic voltammetry. 1H and 13C NMR spectroscopy allowed the observation of diastereomers. Fullerene-substituted peptides may be synthesized on relatively large scale by solid-pha...

International Nuclear Information System (INIS)

MoSi_2-particulate-reinforced #alpha#-SiAlON ceramic composites 10, 20, 25, and 30 vol% were prepared by at 1,750--1,800C. The #alpha#-SiAlON matrix was of the composition (Y_0_._4_8Si_1_0_._0_0Al_2_._3_0O_1_._1_7N_1_5_._2_9). The hardness for the fully dense samples changed from HV10 = 22.5 to 15.3 GPa and the toughness from 3.2 to around 5.2 MPa#centre dot#m"1"/"2 when up to 30 vol% MoSi_2 was present. Two interesting microstructural features have been found. First, with an increasing amount of MoSi_2 a pronounced coalescence of MoSi_2 particles formed a ''dual phase'' material. The second effect was the growth of elongated #alpha#-SiAlON grains in the matrix with 10 vol% MoSi_2 added. The oxidation resistance has been determined, to be unaffected by the addition of 20 vol% ...

International Nuclear Information System (INIS)

The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).

International Nuclear Information System (INIS)

Si/Ni alloy and graphite composites were synthesized using arc-melting followed by high energy mechanical milling (HEMM). Alloy particles comprising of NiSi2, NiSi and Si phases were distributed finely and uniformly on the surface of graphite in the composites obtained after Hem. The composite containing 60 wt.% of Si/Ni alloy exhibited a stable capacity of ?780 mAh/g. Fourier transform infrared spectroscopy (FTIR) analysis confirmed that some bonds were formed between alloy and graphite after HEMM, which appeared to retain the electrical connection between alloy and graphite during cycling. X-ray diffraction (XRD) analysis indicated that NiSi2 and NiSi phases, which acted as an inactive alloy matrix remained invariant during charge and discharge. In addition to NiSi2 and NiSi phases, disordered ...

International Nuclear Information System (INIS)

The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).

Energy Technology Data Exchange (ETDEWEB)

The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)

Energy Technology Data Exchange (ETDEWEB)

We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

Energy Technology Data Exchange (ETDEWEB)

High-field magnetization properties of single crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were investigated. Two-step metamagnetic transition (H{sub c1}=25.4 T and H{sub c2}=26.0 T) was observed in the case of CeRh{sub 2}Si{sub 2}, whereas no anomaly was found in the magnetization process of CePd{sub 2}Si{sub 2} up to 28 T. The mean field analysis has shown that CeRh{sub 2}Si{sub 2} is quite anisotropic compared to CePd{sub 2}Si{sub 2}, which results in the sharp contrast between the magnetization processes of the two compounds.

Energy Technology Data Exchange (ETDEWEB)

Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

Energy Technology Data Exchange (ETDEWEB)

Effect of Al and AlP particles on the microstructure of near eutectic Mn-Si alloy (Mn-30 wt.%Si) was studied by Electron Probe Micro-analyzer (EPMA) and Differential Scanning Calorimeter (DSC). Crystal lattice correspondence analyses show that both Al and AlP have good lattice matching coherence relationships with MnSi phase, and the addition of Al and AlP particles results in an abnormal eutectic structure, i.e. the eutectic constitution MnSi and Mn{sub 5}Si{sub 3} precipitate separately: MnSi precipitates firstly, and then the Mn{sub 5}Si{sub 3} phase.

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

International Nuclear Information System (INIS)

Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial ...

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the ...

International Nuclear Information System (INIS)

Synthesis of Eu-doped #beta#- and 15R-SiAlONs was studied by the ammonia nitridation of precursors derived from an #alpha#-Si_3N_4 fine powder dispersed in aluminum glycine gel with various Si/Al ratio and post-annealing in a nitrogen pressure furnace. The largest amount of #beta#-SiAlON was observed in the product at 1750 deg. C for Si/Al = 1/1 with small amounts of both #alpha#- and 15R-SiAlON impurities. The product showed two emissions at around 420 nm and 560 nm. The emission intensities decreased with increasing amount of #beta#-SiAlON. The former and latter emissions were assigned to Eu"2"+ in the 15R- and #alpha#-SiAlONs impurities. A mixture of Eu-doped 15R-SiAlON with #alpha#-Al_2O_3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO_3)_3.9H_2O in a ...

International Nuclear Information System (INIS)

The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in ...

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. The size of He bubbles in the fiber was slightly increased by ...

International Nuclear Information System (INIS)

Objective: To discuss the clinical application value of dual energy subtraction (DES) in direct digital radiography of chest. Methods: 83 cases of chest digital radiography(DR) using double-energy subtraction (DES) were randomly selected, and three posterior-anterior (PA) chest films (standard image, bone image and soft tissue image) were obtained in each case, which is so called 'bone and soft tissue separated' technology. Results: With the aid of double energy subtraction (DES), the bony chest was subtracted, the sensitivity and specificity of pulmonary calcification were improved, and sensitivity of pulmonary nodes was also improved, enhancing the distinction between pulmonary benign or malignant lesions, enlightening the diagnosis of chest cage lesions, and showing a clear superiority in the detection of pulmonary nodes comparing to common chest films. The double energy subtraction (DES) films showed a higher diagnostic accuracy in the detection of bony ...

International Nuclear Information System (INIS)

"2"7Al and "2"9Si solid-state NMR spectra and X-ray diffraction (XRD) patterns were obtained for #alpha#-SiAlON powders prepared by combustion synthesis, according to which the phase transformation and structure evolution of #alpha#-SiAlON were studied. It was found that in #alpha#-SiAlON "2"9Si chemical shift values (-48 < #delta# _S_i < -47) were close to those in #beta#-Si_3N_4 and #alpha#-Si_3N_4, indicating that Si atoms kept SiN_4 coordination to a large extent in #alpha#-SiAlON despite the presence of O atoms. Dissimilarly, "2"7Al chemical shift values in #alpha#-SiAlON deviated clearly from that corresponding to AlN_4 coordination (#delta# _A_l #approx# 112) and occurred in a range from #delta# _A_l 95.5 to 99.9, which ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

In Ce(Ru{sub 1-x}Pd{sub x}){sub 2}Si{sub 2} the dilution of the transition metal leads to strong electronic effects resulting in the disappearance and the appearance of long-range magnetic order in CePd{sub 2}Si{sub 2} and CeRu{sub 2}Si{sub 2}, respectively. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

The Si L/sub 2/ /sub 3/VV Auger Lineshape for Pd/sub 4/Si was measured and found to be in good agreement with the self-fold of the Si partial density of states model calculated by Riley et al. Oxygen chemisorption altered both the Auger lineshape and the HeI photoemission spectrum, especially near the Fermi energy.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... chemical reactions high temperature lattice parameters microhardness

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion ...

Science.gov (United States)

We report results of measurements and analysis of the heat capacity of MnSi. The measurements included data collection at a magnetic field of 4T, which suppresses strongly the longitudinal spin fluctuations and the phase transition. To analyze the experimental data, calculations of the phonon spectrum and phonon density of states in MnSi were performed. Inelastic neutron scattering with a polycrystalline sample of MnSi was used to validate the computational results. The combination of the experimental and theoretical data turned out to be decisive in revealing some hidden features of the thermal excitations in MnSi. In particular, the analysis of the available data led conclusively to the existence of a negative contribution to the heat capacity and entropy in MnSi at T>Tc, implying that a specific spin ordering process did occur in the paramagnet phase of ...

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

International Nuclear Information System (INIS)

The compounds CePdSi_2, CeIrSi_2 and CeRhSn_2 have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi_2 exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi_2 shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn_2 remains paramagnetic down to 5 K. The resistivity of CeIrSi_2 exhibits a T"2 dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi_2 and CeRhSn_2 shows the presence of Kondo and crystal field effects. (orig.).

International Nuclear Information System (INIS)

#beta#-SiAlON was synthesized from a zeolite by NH_3 gas nitridation and its formation mechanism was investigated using X-ray diffraction and "2"9Si and "2"7Al NMR spectroscopy. It was revealed that most of the Si and Al atoms react to form #beta#-SiAlON via amorphous forms of Si-Al-O-N and O-SiAlON. Nitridation using NH_3 gas is an effective means of preventing mullite formation and promoting the introduction of nitrogen into aluminosilicate materials at lower temperatures than temperatures required by the carbothermal reduction nitridation process. Further, the NMR spectra showed that the siliceous part of the system changed into low z-value of Si_6_-_zAl_zO_zN_8_-_z (#beta#-SiAlON) and the incorporation of Al components into the #beta#-SiAlON was promoted in the later stages of the reaction. ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from ...

CERN Document Server

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

International Nuclear Information System (INIS)

Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO_2) and 1 Grad(SiO_2) ("6"0Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO_2) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO_2) range.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} ...

International Nuclear Information System (INIS)

The possibility of having Sr as an interstitial metal cation in #alpha#-SiAlON has been investigated in two systems: a single-cation system (Si_3N_4-SrO-AlN) and a multication system (Si_3N_4-(Y_2O_3/SrO/CaO)-AlN). It was found that Sr alone does not form #alpha#-SiAlON and that Sr could only be accommodated in #alpha#-SiAlON in conjunction with Y and Ca. The Sr content of #alpha#-SiAlON increased as the total content of (Y + Ca) increased and appeared to reach a limit at 0.5 at.%, or 0.15 atom per #alpha#-SiAlON. Unexpectedly, some of the #alpha#-SiAlON that contained (Sr + Y + Ca) was present as laths or fibers with the c-axis perpendicular to the hot-press direction.

Energy Technology Data Exchange (ETDEWEB)

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are ...

International Nuclear Information System (INIS)

Continuous freestanding SiC(Al) films were fabricated by melt spinning the aluminum-containing polycarbosilane (A-PCS) precursor. The results showed that the films contained #beta#-SiC crystals, #alpha#-SiC nano-crystals, C clusters and small amount of Al_4O_4C and Al_4SiC_4. The Al atoms in the films played important roles as both sintering aids and grain growth inhibitor. The PL spectrum showed a wide luminescence band from 320 nm to 440 nm, and the origin of PL centered at 385 nm might be related to the #alpha#-SiC nano-crystals using quantum size effects. The obtained films are expected to have important applications in MEMS for the environment of high temperature and optoelectronic devices.

Science.gov (United States)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

Analytical TEM and high resolution TEM were used in the microstructural characterization of hot-press sintered Si_3N_4-SiC platelets composites. The quantity of sintering additives, Er_2O_3 and AlN, was varied to produce different matrices, e. g. Si_3N_4, #beta#'+#alpha#'-Sialon and #alpha#'-Sialon. Detailed analysis of platelet-sialon matrix interfaces revealed the presence of AlN polytypoids. The polytypoids nucleate preferentially onto the (0001) plane of SiC and growth epitaxially in several ten nanometer layers contributing in this way to crystallize, partially, the matrix intergranular glass pockets contacting the platelets. Possible applications of the phenomena to microstructural control, grain boundary phase control and enhanced creep resistance are discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Single-crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce{sup 3+} ion and the surrounding ligands in CeRh{sub 2}Si{sub 2} turned out to be strong and highly anisotropic in comparison to CePd{sub 2}Si{sub 2}. (orig.) 10 refs.

International Nuclear Information System (INIS)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

British Library Electronic Table of Contents (United Kingdom)

Ni-Co/SiC nanocomposite coatings were electrodeposited in a modified watt type of Ni-Co bath containing 20nm SiC particles to be codeposited. Potentiodynamic polarization tests were conducted to study the effect of the SiC particulates on the electrodeposition of Ni and Co. Scanning electron microscopy was used to assess the morphology of the Ni-Co alloy and Ni-Co/SiC nanocomposite coatings. The distribution of the particulates in the matrix was considered by means of transmission electron microscopy. Applying nanomechanical testing instruments coupled to atomic force microscopy, mechanical properties of the alloy and composite coatings were studied and compared. The presence of 11vol.% SiC in the Ni-Co matrix increased hardness more than 60%. The average depth of scratch in the mentioned ...

International Nuclear Information System (INIS)

A brain weight deficit of about 70 mg was induced at doses of approximately 75-mGy and a deficit of 60 mg was induced at 100 mGy. This confirms the effects projected and observed by Wanner and Edwards. Although the data do not demonstrate a clear dose-response relationship between the 75-mGy and 100-mGy groups, the data are statistically consistent with a dose-response effect because of the overlapping confidence intervals. The lack of a statistically significant observation is most likely related to the small difference in doses and the limited numbers of animals examined. There are several factors that can influence the brain weight of guinea pig pups, such as caging and housing conditions, the sex of the animal, and litter size. These should be taken into account for accurate analysis. Dam weight did not appear to have a significant effect. The confirmation of a micrencephalic effect induced x rays at doses of 75-mGy during this late embryonic stage of ...

International Nuclear Information System (INIS)

Here we describe the use of low energy plasma immersion with active screen as a convenient approach for polypropylene (PP) surface modification. Employing a stainless steel cathodic cage coated with carbon in order to prevent the sputtering of iron from the grid and its deposition onto the polymer sample, the physical chemical properties of PP surface could be effectively modified through the plasma-induced incorporation/formation of nitrogen- and oxygen-containing species. The areal densities of these elements depended on the plasma excitation source, as determined by Rutherford backscattering spectrometry (RBS). Newly formed C-O, C-N, and C=O/O=C-O/N-C=O bonds along with C-C linkages from the PP backbone were identified at the near surface region of the specimens by X-ray photoelectron spectroscopy (XPS). The insertion of such polar reactive functionalities was further confirmed by a substantial decrease in the water contact angle upon plasma treatment. Scanning ...

CERN Document Server

A complete macromolecule modeling package must be able to solve the simplest structure prediction problems. Despite recent successes in high resolution structure modeling and design, the Rosetta software suite fares poorly on deceptively small protein and RNA puzzles, some as small as four residues. To illustrate these problems, this manuscript presents extensive Rosetta results for four well-defined test cases: the 20-residue mini-protein Trp cage, an even smaller disulfide-stabilized conotoxin, the reactive loop of a serine protease inhibitor, and a UUCG RNA tetraloop. In contrast to previous Rosetta studies, several lines of evidence indicate that conformational sampling is not the major bottleneck in modeling these small systems. Instead, approximations and omissions in the Rosetta all-atom energy function currently preclude discriminating experimentally observed conformations from de novo models at atomic resolution. These molecular "puzzles" should serve as ...

Energy Technology Data Exchange (ETDEWEB)

A new type of ionization chamber with levitated electrode has been developed. In this ionization chamber, an ion-collection electrode levitates in the air without getting any physical support from the insulator. The electrode is charged by an electrostatic charger without physical contact. The charge of the electrode is read out at a Faraday cage periodically at a given time interval without physical contact. Because its electrode levitates, the ionization chamber produces no background current caused by leaks or piezo current. In addition, as the charging of its electrode and the read-out of its charge are carried out without physical contact, no irregular charge or contact potential difference due to the chattering between electrode and contact point occurs. Through experiments, it was found that this ionization chamber was able to measure the {gamma}-ray dose such as the environmental radiation with a high degree of sensitivity. The minimum detectable value of ...

Energy Technology Data Exchange (ETDEWEB)

In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% ...

International Nuclear Information System (INIS)

The solubility limit of #alpha#'-SiAlON solid solutions on the Si_3N_4-YN:3AlN composition join in the system Si_3N_4-YN-AlN has been determined at 1800 degrees C. The end members of these solid solutions are Y_0_._4_3Si_1_0_._7Al_1_._3N_1_6 and Y_0_._8Si_9_._6Al_2_._4N_1_6. Unit-cell dimensions of the #alpha#'-SiAlON solid solutions in the system Si,Al,Y/N,O can be expressed as follows: a_0 (Angstrom) = 7.752 + 0.045m + 0.009n, c_0 (Angstrom) = 5.620 + 0.048m + 0.009n, where the #alpha#'-SiAlON solid solution has the formula Y_xSi_1_2_-_(_m _+ _n_)Al_m_+_nN_1_6_-_nO_n. The single-phase boundary of the solid solution #alpha#'-SiAlON on the composition triangle Si_3N_4-YN:3AlN-Al;N:Al_2O_3 is delineated. The present paper also reports the phase relationships ...

Energy Technology Data Exchange (ETDEWEB)

A systematic study of structure-mechanical properties relation is reported for MoSi{sub 2}-SiC nanolayer composites. Alternating layers of MoSi{sub 2} and SiC were synthesized by DC magnetron and rf-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: Crystallization and phase transformation of MoSi{sub 2}, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11 GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi{sub 2} to form the C40 structure at 500C ...

Energy Technology Data Exchange (ETDEWEB)

The K{beta}-to-K{alpha} X-ray intensity ratio of Ni in Ni{sub 3}Si, Ni{sub 2}Si and NiSi has been determined by energy dispersive X-ray fluorescence technique. It is found that the intensity ratio of Ni decreases from pure Ni to Ni{sub 2}Si and then increases from Ni{sub 2}Si to NiSi, in good agreement with the electronic structure calculations cited in the literature. We have also performed band structure calculations for pure Ni in various atomic configurations by means of linear muffin-tin orbital method and used this data with the normalized theoretical intensity ratios cited in the literature to estimate the 3d-occupation numbers of Ni in Ni-Si alloys. It is emphasized that investigation of alloying effect in terms of X-ray intensity ratios should be carried out for the stoichiometric alloys in order to make reliable and quantitative ...

International Nuclear Information System (INIS)

Highly conductive biaxially textured RuO_2 thin films were deposited on technically important SiO_2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO_2 on SiO_2/Si. The biaxially oriented RuO_2 had a room-temperature resistivity of 37 #mu##OMEGA#-cm and residual resistivity ratio above 2. We then deposited Ba_0_._5Sr_0_._5TiO_3 thin films on RuO_2/IBAD-YSZ/SiO_2/Si. The Ba_0_._5Sr_0_._5TiO_3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society.

International Nuclear Information System (INIS)

The observation by inelastic neutron scattering techniques of a high energy peak in the phonon spectrum (14 THz) of V_3Si is reported, and is attributed to a peak in the phonon density of states due to vanadium motions by the incoherent inelastic neutron scattering process.

International Nuclear Information System (INIS)

Two new equiatomic ternary compounds, EuPtSi and EuPdSi, have been synthesized and are found to crystallize in the cubic LaIrSi type structure. The magnetic susceptibility of both compounds follows Curie-Weiss behavior in the temperature range 10 to 300 K with an effective magnetic moment close to that of Eu"2"+ moment. The paramagnetic Curie temperatures are 5 K for EuPtSi and 9 K for EuPdSi. There is no clear indication of magnetic ordering in the susceptibility of both the compounds down to 4.2 K. However, "1"5"1Eu Moessbauer studies show a hyperfine split pattern in EuPtSi at 4.2 K indicating the onset of magnetic ordering. The "1"5"1Eu isomer shifts are temperature independent and are characteristic of the divalent Eu ion. All these results establish that the Eu ions are in a stable divalent state in these compounds. (orig.).

UK PubMed Central (United Kingdom)

Self-incompatibility (SI) is widespread in the angiosperms, but identifying the biochemical components of SI mechanisms has proven to be difficult in most lineages. Coffea (coffee;...Full Text Available

International Nuclear Information System (INIS)

The crystal structure and phonon densities of states (DOS) of #beta#'-SiAlON ceramics, Si_6_-_zAl_zO"zN_8_-_z (0 #<=# z #<=# 4), prepared by a novel slipcast method, are studied by neutron-scattering techniques. The samples with z < 4 form a single-phase solid solution of Si-Al-O-N isostructural to #beta#-Si_3N_4 (space group P6_3/m). A consistent preferential occupation of the 2c sites by oxygen atoms and the 6h sites by nitrogen atoms exists within this structure. The phonon DOS of #beta#'-SiAlON displays phonon bands at #approx#50 and 115 meV. These features are considerably broader than the corresponding ones in #beta#-Si_3N_4 powder.

Energy Technology Data Exchange (ETDEWEB)

The chemical interaction of a Si{sub 3}N{sub 4} ceramic with pristine and oxidised 100Cr6 steel was studied by means of static interaction couple experiments between 500 and 1200 C. Si{sub 3}N{sub 4} was not chemically stable in contact with oxidised steel at elevated temperatures, and reacts with the formation of N{sub 2}, SiO{sub 2} and/or Fe{sub 2}SiO{sub 4} at temperatures at and above 1000 C. At 700 and 500 C, Si diffusion into the oxide layer indicated the dissociation of the Si{sub 3}N{sub 4} ceramic. Si{sub 3}N{sub 4} also dissociated in contact with pristine steel. In the temperature region between 700 and 1100 C, the Si dissolves and diffuses into the steel whereas a nitrogen pressure is built-up in the voids of the metal-ceramic interface, limiting the degree of interaction. Above 1100 C, the nitrogen ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

International Nuclear Information System (INIS)

... 194 p. auger electron spectroscopy decomposition deposition interfaces oxygen

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

Energy Technology Data Exchange (ETDEWEB)

As concern regarding global environmental problems such as the greenhouse effect and acid rain has increased, so too has the demand for commercially viable solar cells as a clean energy source. Interest in amorphous silicon (a-Si) solar cells has been particularly high, due to their low cost. Technological developments in the field of a-Si solar cells are discussed from the viewpoints of fabrication process, materials, and cell structures. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are mentioned

International Nuclear Information System (INIS)

English Mar 1999 [vp.] United Kingdom Jumali, MHH Warwick Univ.,

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... susceptibility magnetization magnetoresistance monocrystals order-disorder

Energy Technology Data Exchange (ETDEWEB)

Significantly improved immunity to hot-hole damage of the SiO[sub 2]/Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10[sup 16]/cm[sup 2]). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

International Nuclear Information System (INIS)

In YbPd_2Si_2, the valence of Yb is very close to 3+. Ge substitution of Si induces a negative pressure effect and the valence of Yb decreases. For the low Ge concentrations studied, the spin fluctuation temperature T_s_f increases and #chi#4f, the Yb derived 4f susceptibility, obeys the scaling law #chi#4f(T)=F(T/T_s_f). (orig.).

International Nuclear Information System (INIS)

The following methods of quartz ceramics alloying were considered: alloying of initial quartz glass; introduction of alloying additive into water slip of quartz glass; porous materials impregnation with salt aqueous solutions and subsequent salt thermal decomposition with formation of stable oxides in pores of ceramics. Oxygen free compounds BN, SiB_4, SiC, Si_3N_4, REM oxides and transition metal oxides were used as alloying additives. Main properties of the materials and compositions obtained are presented.

Science.gov (United States)

Resistivity measurements were performed on Fe40 Ni40 B20 and Pd80 Si20 in order to improve the understanding of structural relaxation in amorphous metals. A model describing structural relaxation as a combination of chemical short range ordering (CSRO) an...

International Nuclear Information System (INIS)

The Ksub(#beta#)/Ksub(#alpha# 12) x-ray intensity ratio of the Si K spectrum was measured for proton impact on Si0_2 in the energy range 300-800 keV. An energy dependence of the intensity ratio was found and an explanation is given in terms of multiple ionisation. (author).

International Nuclear Information System (INIS)

Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Million-atom molecular-dynamics (MD) simulations are performed to study the structure, mechanical properties, and dynamic fracture in nanophase Si{sub 3}N{sub 4}. The authors find that intercluster regions are highly disordered: 50% of Si atoms in intercluster regions are three-fold coordinated. Elastic moduli of nanophase Si{sub 3}N{sub 4} as a function of grain size and porosity are well described by a multiphase model for heterogeneous materials. The study of fracture in the nanophase Si{sub 3}N{sub 4} reveals that the system can sustain an order-of-magnitude larger external load than crystalline Si{sub 3}N{sub 4}. This is due to branching and pinning of the crack front by nanoscale microstructures.

Energy Technology Data Exchange (ETDEWEB)

The growth and properties of Si{sub 1{minus}y}C{sub y} and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.

Energy Technology Data Exchange (ETDEWEB)

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd{sub 2}Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd{sub 2}Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.

International Nuclear Information System (INIS)

The corrosion resistance of molybdenum, molybdenum disilicide, and a SiC_(_p_)/Al_2O_3 composite to molten E-glass at 1,550 C was studied. Mo showed no tendency to oxidize as it was immersed in soda-lime silicate glass in a parallel study. MoSi_2 was corroded by soluble molecular oxygen, leaving a Mo_5Si_3 interface behind. The SiC_(_p_)/Al_2O_3 composite was corroded at a more rapid rate wherein the SiC component was oxidized to form amorphous silica and CO bubbles. Based on these results, the activity of soluble molecular oxygen in E-glass was determined to be in the range of 2.4 x 10"-"1"4 to 2.0 x 10 "-"8.

International Nuclear Information System (INIS)

Phase transformations from #alpha#- to #beta#-SiAlONs (i.e., from #alpha#' to #beta#') have been recently reported in a number of rare-earth SiAlON systems during postsintering heat treatment. In the present work, this transformation process in a Sm (#alpha# + #beta#)-SiAlON material is studied by using XRD, TEM, and EDS X-ray mapping techniques. It is observed that in addition to the formation of #beta#' and M' phases, the #alpha#'-to-#beta#' transformation is accompanied by a significant increase in the amount of an AlN-polytypoid phase. The results suggest that some #alpha#' phases are thermodynamically unstable at temperatures lower than the material sintering temperature and will decompose when conditions allow. For the composition studied in this work, the #alpha#-SiAlON decomposition can be described in general as #alpha#' #-># #beta#' + M' + AlN polytypoid.

Energy Technology Data Exchange (ETDEWEB)

Thin Pt, Pd, Pt/sub 2/Si, PtSi, Pd/sub 2/Si, Ni, Mo, W, Nb, Ti, V films deposited on Si single crystal were treated by using electron beam pulses of 60 ns duration in the 0.4-4 J/cm/sup 2/ energy density range. Irradiation of these structures produces at the same time many phases. Post-thermal annealing of the reacted layer induces the formation of a stable phase, the same obtained by only thermal treatment in a conventional furnace. A linear relationship between the energy density range and the lowest eutectic temperature of the compounds formed has been found. Further SEM observations seem to identify a liquid layer from which the phases are forming by subsequent fast cooling.

Energy Technology Data Exchange (ETDEWEB)

The purpose of the present study is to develop a new method for chemical state analysis by means of EPMA(Electron probe microanalyser). The measured X-ray intensity of Si-K{beta} characteristic X-ray spectra were read-out by a 16 bit microcomputer with a RS-232C interface. And using the curve fitting method the quantitative analysis of chemical compositions in a ternary compound that constituted of the same element has been established. The present method was applied to analyse of the friction and wear properties of Si-base ceramics sliding materials. It was found that the wear debris contains both the compositions of the sliding materials and SiO{sub 2}, and the SiO{sub 2} contents in wear debris was changed with relative humidity. The results clearly showed that the proposed method is very useful for determing the compositions in the ternary compound. (author).

Science.gov (United States)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.

Energy Technology Data Exchange (ETDEWEB)

The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

Energy Technology Data Exchange (ETDEWEB)

The ternary zirconium palladium silicide ZrPd{sub 3}Si{sub 3} has been synthesized by arc-melting of the elemental components. It adopts a new structure type and crystallizes in the orthorhombic space group Cmcm with a = 3.8127(4){angstrom}, b = 15.551(1){angstrom}, c = 7.0390(5){angstrom}, and Z = 4 (Pearson symbol oC28). The structure can be regarded as being built up of Re{sub 3}B-type slabs of composition Pd{sub 3}Si alternating with {alpha}-FeSi{sub 2} slabs of composition ZrSi{sub 2}. Notable features include the presence of Si{sub 2} pairs, square pyramidal and tetrahedral coordination of Pd centers by Si atoms, an unusual distorted cubic coordination of the Zr atoms by the Si{sub 2} pairs, and an extensive network of Zr-Zr, Zr-Pd, and Pd-Pd metal-metal bonds. ZrPd{sub 3}Si{sub 3} is weakly metallic with a ...

Energy Technology Data Exchange (ETDEWEB)

Amorphous materials in the system xLi{sub 2}S{center_dot}(100-x)SiS{sub 2}, where x ranged from 50 to 70 mol %, and (100-y) (0.6Li{sub 2}S{center_dot}0.4SiS{sub 2}){center_dot}yLi{sub 4}SiO{sub 4}, where y ranged from 0 to 10 mol %, were synthesized by mechanical milling of crystalline starting materials, Li{sub 2}S, SiS{sub 2} and Li{sub 4}SiO{sub 4}. At the compositions with large amounts of Li{sup +} ions, a part of crystalline Li{sub 2}S used as a starting material remained in the milled powder samples. It was found that the milled powder samples in both systems obtained by mechanical milling exhibited high conductivities in the order of 10{sup -4}S{center_dot}cm{sup -1} at room temperature in spite of the presence of small amounts of Li{sub 2}S crystals. The conductivity values of the pelletized samples of xLi{sub 2}S{center_dot}(100-x)SiS{sub 2} powders ...

Energy Technology Data Exchange (ETDEWEB)

Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO{sub 2}/SiO{sub x} /SiO{sub 2}/Si(100) stacked structure. The chemical composition of SiO{sub x} layer was controlled by changing the SiH{sub 4}, He, and O{sub 2} gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 10{sup 12} cm{sup -2} carriers are injected to or emitted from Si nanocrystals. The ...

International Nuclear Information System (INIS)

The thermodynamics of the Sr-Si system is of fundamental importance for the understanding of eutectic modification of Al-Si alloys. At the same time, strontium silicides have recently been found to have potential applications in electronic devices. Renewed research efforts have led to a re-evaluation of the phase equilibria in this system, resulting in the discovery of previously undetected stable intermetallic compounds. In this work, we investigate the finite temperature thermodynamic properties of the stable (and metastable) Sr-Si intermetallics. The vibrational properties of the intermetallic compounds are calculated within harmonic theory, with quasi-harmonic corrections to account for the effects of thermal expansion. The total free energies of the compounds are computed considering vibrational and electronic contributions, as well as weak anharmonic corrections. The ground state of the system is predicted and ...

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

Energy Technology Data Exchange (ETDEWEB)

In this review, the most important inorganic natural gels are presented: opal, aluminosilicate (allophanes) and hydrous iron oxides and silicates. It is demonstrated that natural gels are ordered at the atomic scale. In allophanes, Al is distributed between octahedral and tetrahedral sites. The amount of Al increases as Al/Si ratio decreases. Si-rich allophane have a local structure around Al and Si very different of that is known in kaolinite or halloysite. Transformation of Si-rich allophanes to crystallized minerals implies dissolution-recrystallization processes. On the contrary, in iron silicate with Fe/Si = 0.72, Si and Fe environments are close to those found in nontronite. The gel transformation to Fe-smectite may occur by long range ordering during ageing. In ferric silicate gels, the similarity of local structure around Fe in poorly ordered precursors ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field ...

British Library Electronic Table of Contents (United Kingdom)

High lithium-ion (Li^+) conductive garnet-structured lanthanum lithium zirconate (LLZ) solid electrolyte is prepared by incorporation of appropriate amounts of silicon (Si) and aluminum (Al). The resultant pelletized LLZ obtains total Li^+ conductivity of 6.8x10^-^4Scm^-^1 at 298K. This improved conductivity is nearly identical with the bulk Li^+ conductivity of the LLZ reported earlier, suggesting that the grain boundary resistance is effectively reduced by the incorporation of Si and Al. Microanalyses by transmission electron microscopy coupled with energy-dispersive X-ray microanalysis and electron energy-loss spectroscopy revealed the presence of amorphous Li-Al-Si-O with nano crystalline LiAlSiO4 at grain boundaries. Fast lithium-ion transport around the amorphous Li-Al-Si-O/LiAlSiO4 ...

International Nuclear Information System (INIS)

The broad bands in the room-temperature excitation spectra of Sm"3"+-, Dy"3"+- and Tm"3"+-activated Ca-#alpha#-SiAlON phosphors are interpreted as the N"3"--to-rare earth charge transfer transition (CTT). From the energies of the charge transfer transitions and from the optical data presented for the Eu"2"+ ion, the location of the divalent rare earth ion energy levels relative to the valence and the conduction band of Ca-#alpha#-SiAlON is derived. The salient features of the energy-level diagram are shown to be practical in explaining the temperature-dependent variations of the Eu"2"+ and Yb"2"+ luminescence efficiency in Ca-#alpha#-SiAlON. A comparative study pertaining to the nature of the Yb"2"+ and Eu"2"+ ion luminescence in Ca-#alpha#-SiAlON and in SrSi_2O_2N_2 is presented. A tentative energy-level diagram of the trivalent rare earth ions in ...

International Nuclear Information System (INIS)

Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and #left brace#113#right brace# defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration decreases, the loss of Si interstitials through diffusion to ...

International Nuclear Information System (INIS)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of #tau#_8-Ce_3Pd_4Si_4 (U_3Ni_4Si_4-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), #tau#_1_6-Ce_2Pd_1_4Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for #tau#_1_8-CePd_1_-_xSi_x (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of #tau#_5-Ce_3PdSi_3 (Ba_3Al_2Ge_2-type, ...

Energy Technology Data Exchange (ETDEWEB)

The ab initio pseudopotential method is used to study transient-enhanced-diffusion (TED) related processes. The electronic degrees of freedom are included explicitly, together with the fully self-consistent treatment of the electron charge density. A large supercell and a fine k-point mesh are used to ensure numerical convergence. Such method has been demonstrated to give quantitative description of defect energetic. We will show that boron diffusion is significantly enhanced in the presence of the Si interstitial due to the substantial lowering of the migrational barrier through a kick-out mechanism. The resulting mobile boron can also be trapped by another substitutional boron, forming an immobile and elect rically inactive two-boron pair. Similarly, carbon diffusion is also enhanced significantly due to the pairing with Si interstitial. However, carbon binds to Si interstitial much more strongly than boron does, taking ...

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This paper describes the effects of SiC coating on the oxidation resistance of C/C composites in combusting fields, which are expected to be applied to high temperature structural materials at over 1770K. The coating methods employed were CVD and pack cementation. The time changes in weight loss of the specimens were measured at temperatures of 1770K and 1900K under the equivalence ratio of 0.9 generated by methane-air combustion, and the surface of the specimens before and after the experiment was observed by SEM. Although the weight loss of the specimens coated by the CVD method was minimal, the coating layer was easily peeled off from the substrate. On the other hand, the layer of the specimens coated by the pack cementation method was stable and adhered to the substrate, but the substrate was degraded because of penetration of oxygen through the pores in the layer. To cover the pores, the specimens were additionally coated with glass materials comprised of ...

Energy Technology Data Exchange (ETDEWEB)

SiC has been considered as a primary candidate material for a first wall component in future fusion reactor because it has been claimed that SiC has excellent high-temperature properties, good chemical stability and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, tritium trapping capacity on the surface of SiC was experimentally obtained at the temperature range of 25-800 deg. C in consideration of tritium trapping to the experimental system. The capacity, which was independent of the water vapor pressure in the gas phase and the temperature, was determined as about 10{sup 6} Bq/cm{sup 2}. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface was quantified at the temperature of 25, 500 and 700 deg. C in consideration of the behavior of tritium trapping at change of experimental condition by the numerical ...

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the ...

International Nuclear Information System (INIS)

SiAlONs are ceramics with high potential as biomaterials due to their chemical stability, associated with suitable mechanical properties, such as high fracture toughness and fracture resistance. The objective of this work was to investigate the mechanical properties and the cytotoxicity of these ceramic materials. Three different compositions were prepared, using silicon nitride, aluminum nitride and a rare earth oxide mixture as starting powders, yielding Si_3N_4-SiAlON composites or pure SiAlON ceramics, after hot-pressing at 1750 deg. C, for 30 min. The sintered samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). Furthermore, hardness and fracture toughness were determined using the Vicker's indentation method. The biological compatibility was evaluated by in vitro cytotoxicity tests. Ceramic with elevated hardness, ranging between 17 and 21 GPa, and ...

Science.gov (United States)

The isomerization of neopentane has been investigated over the 0.76 wt% Pd/SiO{sub 2} catalyst. It is found that after high temperature reduction (HTR, at 873 K) the selectivity for isomerization is much higher than that after low temperature reduction (LTR, at 573 K). A variety of experiments, including kinetic, chemisorption (O{sub 2}, H{sub 2}, and CO), temperature-programmed desorption of H{sub 2}, and X-ray diffraction, showed that this selectivity enhancement cannot be interpreted in terms of H{sub 2} retention by catalyst. Instead, the formation of Pd-Si compound(s) (most probably Pd{sub 3}Si) during HTR seems immediately responsible for the catalytic behavior of HTR Pd/SiO{sub 2} catalysts. A mechanism is proposed for the Pd-SiO{sub 2} interaction in which Pd atoms (or ions) are incorporated into the silica support (via oxygen vacancies) and a new phase of palladium silicide ...

Energy Technology Data Exchange (ETDEWEB)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

Energy Technology Data Exchange (ETDEWEB)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

Energy Technology Data Exchange (ETDEWEB)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

Energy Technology Data Exchange (ETDEWEB)

The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four.

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in ...

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

indications of the formation of palladium silicides. 2, 4. It has been reported .... At room temperature, palladium silicides formed in a relatively narrow interface ...

British Library Electronic Table of Contents (United Kingdom)

In this study, the influence of Beryllium (Be) content on the fracture behaviour of Al?15%Mg2Si composite was investigated. The results showed an increase in mechanical properties with increasing of Be content. The stress?strain curves of samples showed a same category of serrations reflecting non-uniform deformation. Scanning electron microscopy was employed to examine the crack nucleation and fracture model. The results indicate that Al?15%Mg2Si composite shows different behaviours of crack initiation and fracture for samples with and without Be. Differences observed in the fracture behaviour were attributed to microstructural changes as well as morphological aspects of primary Mg2Si particles.

International Nuclear Information System (INIS)

Structure and magnetic properties of UNi_1_0_-_xFe_xSi_2 intermetallics and "2"9Si nuclear magnetic resonance (NMR) in UNi_1_0Si_2 are investigated in a wide temperature range. Solid solutions in the exactly single-phase tetragonal form, ThMn_1_2 type, exist for x<2. The Ni and Fe atoms occupy the 8(f), 8(i) and 8(j) positions statistically, whereas the U atoms occupy the 2(a) and the Si atoms the 8(j) sites. The lattice parameters roughly follow Vegard's law. The magnetic susceptibility does not exhibit Curie-Weiss behaviour and, at about 630 K, an anomaly in the temperature dependence is observed. At low temperature, other anomalies are observed at 32 K and 45 K, for x=0.5 and 1.0 respectively. These low temperature anomalies are probably connected with magnetic ordering of a ferromagnetic character, whereas that at 630 K might result from the superparamagnetic state of Ni. Two ...

International Nuclear Information System (INIS)

Short communication. 2 figs.

Science.gov (United States)

Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in ...

International Nuclear Information System (INIS)

... p. 93 Russian Federation Rovnyj, SI Ufimtsev, VP Shevtsev, PP Nedelina,

International Nuclear Information System (INIS)

Beta-SiAlON powders have been synthesized using natural clay containing kaolin and quartz by carbothermal reduction and nitridation (CRN), then beta-SiAlON bonded corundum multiphase materials have been sintered using the as prepared powders. The results indicated that both the holding time and sintering temperature are relatively significant in accordance with optimal analysis by orthogonal method. Reaction process can be briefly interpreted by means of X-ray Diffraction and Difference Temperature Analysis as well as phase diagram principle. Bending strength and bulk density were measured in SiAlON in situ bonded corundum materials with doped various sintering agents. Furthermore, the relevant mechanical properties and microstructure were discussed in detail.

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

British Library Electronic Table of Contents (United Kingdom)

Yb-, Y-, Yb/Y-, and Yb/Nd-doped -SiAlON ceramics with 5-wt% barium aluminosilicate (BAS) were synthesized by hot pressing. Typical self-reinforced microstructures were obtained in all investigated -SiAlONs in spite of the type of doped cations. This is attributed to the incorporation of BAS, which could supply suitable liquid phase to promote the anisotropic growth of the -SiAlON grains. All the composites exhibited excellent high-temperature mechanical properties and thermal shock resistance due to the formation of a self-reinforced microstructure and the complete crystallization of BAS additive.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of the ternary compounds, RPd/sub 2/Si/sub 2/ (where R=Gd, Tb, Dy, Ho and Er) has been measured. GdPd/sub 2/Si/sub 2/ and TbPd/sub 2/Si/sub 2/ order antiferromagnetically at 13 and 20 K respectively; the rest of the compounds do not show clear ordering down to 4.2 K. Palladium carries no moment in these compounds. The De Gennes formula is not obeyed indicating that the exchange interaction between the 4f moments via conduction electrons is not isotropic.

International Nuclear Information System (INIS)

(Dec 1971). United States Alexander, DR Antinone, RJ Durham, NH

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

English 2004 2 p. Brazil Rocha, RM Centro Tecnico Aeroespacial (CTA),

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code

International Nuclear Information System (INIS)

Single crystals of U(Ni_1_-_xPd_x )_2Si_2 for x = 0.05, 0.10 and 0.15 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures, magnetic fields and high pressures in order to study stability of magnetic phases in the solid solutions between UNi_2Si_2 and UPd_2Si_2 with a special emphasis on the type of ground state. In UPd_2Si_2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi_2Si_2 adopts the uncompensated AF structure (UAF) with the ++- stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to ...

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

Science.gov (United States)

A way to synthesize the transient zwitterionic silylene L'Si: 8 {L'=CH[(C=CH(2))CMe(N(tBu))(2)]} and achieve its facile dimerization to the remarkable N-heterobicyclic disilane 8(2) is described. At first, employing the beta-diketiminate ligand L [L=CH(CMeN(tBu))(2)], both starting materials LH (2) and its N-lithium salt LLi (3) can react with SiBr(4) to yield the silylene precursor L'SiBr(2) (4) by silicon-induced C-H activation at an exocyclic methyl group on the backbone of the ligand. Compound 4 reacts with SiBr(4) above room temperature to afford the unexpected terminal CH(SiBr(3))-substituted dibromosilane 6 along with the unique tricyclic trisilane 7. Reduction of 4 with KC(8) at 0 degrees C furnishes the novel N-heterobicyclic disilane 8(2), which is a formal dimer of the desired zwitterionic silylene L'Si: (8). It has been reasoned that compound 8(2) ...

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and ...

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

Energy Technology Data Exchange (ETDEWEB)

Gas hydrates are crystalline substances composed of water and gas, in which a solid-water-lattice accommodates gas molecules in a cage-like structure. Gas hydrates are globally widespread in permafrost regions and beneath the sea in sediment of outer continental margins. While methane, propane, and other gases can be included in the clathrate structure, methane hydrates appear to be the most common in nature. The amount of methane sequestered in gas hydrates is probably enormous, but estimates are speculative and range over three orders of magnitude from about 100,000 to 270,000,000 trillion cubic feet. The amount of gas in the hydrate reservoirs of the world greedy exceeds the volume of known conventional gas reserves. Gas hydrates also represent a significant drilling and production hazard. A fundamental question linking gas hydrate resource and hazard issues is: What is the volume of gas hydrates and included gas within a given gas hydrate occurrence Most ...

Energy Technology Data Exchange (ETDEWEB)

There are two types of ionization chamber using magnetically levitated electrode: one is that by Tanaka et al. and the other, by authors'. The latter lacks the sensitivity relative to the former and thereby to solve the problem, authors made an improvement so that the electrode charge could be readout by noncontact after the leviated electrode was electrified by noncontact for an interval. This new type ionization chamber made it possible to measure the quite low dose radiation with stability and high sensitivity. Actually, the electrode was suspended by the teflon thread fixed on the steel cup levitated magnetically in the ionization chamber of which wall was covered by Al and equipped with an electrostatic charger for the electrode by noncontact. After measurement, the electrode was moved in the Faraday cage placed under the chamber to readout the voltage. For operation conditions of the apparatus, observation was done on the relationship between ...

Science.gov (United States)

Testosterone has bipotential effects on male fitness; that is, it both suppresses immune function and maintains characteristics important for reproductive success. Presumably, these effects of testosterone may be more pronounced among polygynous species because testosterone concentrations are generally higher among polygynous than monogamous males. The present study examined sex and species differences in cell-mediated immunity among four arvicoline rodents. The role of mating system and sex steroids in sex differences in immune function was examined in individually housed polygynous meadow (Microtus pennsylvanicus) and montane (M. montanus) voles and monogamous prairie (M. ochrogaster) and pine (M. pinetorum) voles in Experiment 1. No sex differences in splenocyte proliferation were observed among the four species and circulating testosterone concentrations did not correlate with immune function of individuals within each species. The contribution of social isolation to these results ...

Energy Technology Data Exchange (ETDEWEB)

A transplant experiment was conducted to determine whether standard metabolic rate (SMR) of a freshwater shrimp (Palaeomonetes paludosus) would be affected by exposure to trace element-enriched coal combustion waste (coal ash). Shrimp were transplanted into replicate cages in a coal ash-polluted site and a reference site for 8 months. The coal ash-polluted site was characterized by elevated sediment concentrations of As, Cd, Cr, Cu, Ni, Pb and Se compared to sediments in the reference site. After 8 months in the study sites, shrimp in the polluted site appeared to have accumulated As, Cd and Se from the habitat, but there were on differences in survival between the study sites. However, mean SMR of shrimp (measured as O{sub 2} consumption at rest) held in the polluted site was 51% higher than mean SMR of shrimp held in the reference site. The elevation in SMR indicates that the energetic costs of maintenance are greater for shrimp chronically exposed to the ...

Energy Technology Data Exchange (ETDEWEB)

ATR-X (alpha-thalassemia/mental retardation, X-linked) syndrome is a human congenital disorder that causes severe intellectual disabilities. Mutations in the ATRX gene, which encodes an ATP-dependent chromatin-remodeler, are responsible for the syndrome. Approximately 50% of the missense mutations in affected persons are clustered in a cysteine-rich domain termed ADD (ATRX-DNMT3-DNMT3L, ADD{sub ATRX}), whose function has remained elusive. Here we identify ADD{sub ATRX} as a previously unknown histone H3-binding module, whose binding is promoted by lysine 9 trimethylation (H3K9me3) but inhibited by lysine 4 trimethylation (H3K4me3). The cocrystal structure of ADD{sub ATRX} bound to H3{sub 1-15}K9me3 peptide reveals an atypical composite H3K9me3-binding pocket, which is distinct from the conventional trimethyllysine-binding aromatic cage. Notably, H3K9me3-pocket mutants and ATR-X syndrome mutants are defective in both H3K9me3 binding and localization at ...

Science.gov (United States)

The change in concentrations of elements due to transmutations resulting from neutron irradiation in the first wall of the ARIES-IV conceptual fusion energy device were determined as a function of neutron dose. SiC burns out at a rate of about 0.5% per effective full power year. The largest impurity concentration is that of He, but several other elements burn in at rates of hundreds of appm/efpy.

International Nuclear Information System (INIS)

Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)

Energy Technology Data Exchange (ETDEWEB)

This study investigates the effect of solid and liquid lubrication on friction and wear performance of silicon nitride (Si{sub 3}N{sub 4}) and cast iron. The solid lubricant was a thin silver film ({approx}2 {mu}m thick) produced on Si{sub 3}N{sub 4} by ion-beam-assisted deposition. A high-temperature polyol-ester-base synthetic oil served as the liquid lubricant. Friction and wear tests were performed with pin-on-disk and oscillating-slider wear test machines at temperatures up to 300{degrees}C. Without the silver films, the friction coefficients of Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} test pairs were 0.05 to 0.14, and the average wear rates of Si{sub 3}N{sub 4} pins were {approx}5 x 10{sup -8} mm{sup 3} N{sup -1}. The friction coefficients of Si{sub 3}N{sub 4}/cast iron test pairs ranged from 0.08 to 0.11, depending on test temperature. The average specific ...

Energy Technology Data Exchange (ETDEWEB)

Recent developments in design and production of thermal neutron detectors based on a crystalline Si diode coupled to a Gd converter are reviewed. The most significant results of neutron test measurements carried out on prototype systems and pointing out the performances of the device are reported. Progress through various detection schemes and technological solutions for the production of a real time neutron counter for routine operation are outlined.

Energy Technology Data Exchange (ETDEWEB)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA.

Science.gov (United States)

Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.

Energy Technology Data Exchange (ETDEWEB)

Results of experimental researches of impurity level crystals Fe1-xCoxSi are presented in this article. Magnetic properties in a temperature range up to T {<=} 1000 K are analyzed. It was established that with Co impurities increasing origin of magnetic ordering exists at low temperatures. At high temperatures a high temperature maximum of susceptibility of nominally pure iron monosilicide crystal is observed.

International Nuclear Information System (INIS)

The compound UC_2Si_2 has been found to be ferromagnetic at low temperatures with a Curie temperature of 101"0K. The magnetization follows a Curie-Weiss law in the paramagnetic region with an effective magneton number of 2.12 Bohr magnetons per uranium atom. Partial substitution of Th atoms for the U atoms results in an expansion of the lattice, a rapid drop in the Curie temperature, and a sizable increase in the coercive field.

Energy Technology Data Exchange (ETDEWEB)

We report on solid solution CePd[sub 2-x]Mn[sub x]Si[sub 2] which shows an interesting transition of the Ce-ion from magnetism in a Kondo regime to an intermediate valence state coupled with a strongly magnetic 3d sublattice. ((orig.))

International Nuclear Information System (INIS)

In order to investigate the role of amorphous SiO2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of ?-phase and amorphous nano-SiO2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was ...