International Nuclear Information System (INIS)

Russian (Jan 1978). USSR Chorna, IM Beshta, EI Kvitkovskij, LN L'vovskij

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

Energy Technology Data Exchange (ETDEWEB)

The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

International Nuclear Information System (INIS)

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP ...

International Nuclear Information System (INIS)

The reaction of RbC_2_4 with C_6D_6 vapour was studied by neutron diffraction on a time scale of 5 min/spectrum. As for the reaction of KC_2_4, a second stage phase RbC_2_4(C_6D_6)sub(y) is initially formed and subsequently transformed into a first stage phase. Model calculations indicate that the benzene rings are canted against the graphite planes both in the first and in the second stage phase. (Auth.).

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This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

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Digital control technology using micro-processor is widely used in Factory Automation area since 1980`s. However, the D{sub 2}O Vapour Recovery System in Wolsung 1 N.P.P is controlled by mechanical timer without considering the moisture condition in the Reactor Building and bed temperature, because it was designed using analog technology of 1960`s. This leads to the inefficient system operation and low D{sub 2}O recovery rate in addition to the high internal dose rate of operator. The goal of this phase II study is to develope a optimal automatic controller of D{sub 2}O vapour recovery system using PLC. We developed a control algorithm for Dual Tower Drier, a PLC control program, a operation change program and the monitoring system with a real-time simulator for system verification. (author). 15 refs., 11 figs., 2 tabs.

Science.gov (United States)

Homogenous Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers have been obtained with the temperature difference method under controlled vapor pressure (TDM-CVP). Very clear fine structures near band edge in photoluminescence spectra have been observed at 77 K for the first time. Photoluminescence measurement results confirmed that the free exciton recombination without phonon assistance plays an important role in the luminescence at 77 K and becomes dominant at room temperature. It is considered that Zero-phonon assisted free exciton recombination is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al{sub x}Ga{sub 1{minus}x}P layers, which can give momentum change necessary for recombination.

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We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.

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Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

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Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as ...

International Nuclear Information System (INIS)

This study aims to investigate the difference in the interaction of antimicrobial peptides with two classes of zwitterionic peptides, phosphatidylethanolamines (PE) and phosphatidylcholines (PC). Further experiments were performed on model membranes prepared from specific bacterial lipids, lipopolysaccharides (LPS) isolated from Salmonella minnesota. The structure of the lipid-peptide aqueous dispersions was studied by small-and wide-angle X-ray diffraction during heating and cooling from 5 to 85 C. The lipids and peptides were mixed at lipid-to-peptide ratios 10-10000 (POPE and POPC) or 2-50 (LPS). All experiments were performed at synchrotron soft condensed matter beamline A2 in Hasylab at Desy in Hamburg, Germany. The phases were identified and the lattice parameters were calculated. Alamethicin and melittin interact in similar ways with the lipids. Pure POPC forms only lamellar phases. POPE forms lamellar phases at low ...

International Nuclear Information System (INIS)

Ultraveiolet spectroscopy of molecules in vapour phase gives valuable information about electronic structure of free molecules. But in many cases vaipour phase investigations are not possible and in order to isolate molecules within solid lattice, we used cryogenic temperature and high vacuum technology to study absorption spectrum within the spectral range (230-270)nm of an isolated benzene molecule in Argon, Krpton, Nitrogen, Carbon and methane matrices. The spectra shifts were measured and calculated in the matrix environment for the electronnic transition (B 24--A 19) in benzene molecule using the matrices mentioned above. Molar extinction coefficients and oscillator strength were measured too. (7 tabs., 32 figs., 50 refs.).

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, ...

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Between December 2001 and May 2004, a ventilation experiment (VE) was performed in the Mont Terri Underground Research Laboratory (URL) and co-financed by the Commission of the European Communities. The objective was to investigate the desaturation of consolidated clay formations in consequence of the ventilation of underground openings of a repository in such a formation. The results of the geoelectric measurements performed in the second phase of the Mont Terri ventilation test can be summarized as follows: Geoelectric tomography has been found suitable for monitoring ventilation-induced saturation changes in the Opalinus clay. During ventilation with dry air a desaturation down to below 50% could be detected in both desaturation cycles. The desaturated zone extends less than 0.5 m into the rock around the microtunnel. During the second resaturation phase, ventilation with humid air led to quick resaturation at the tunnel surface, while ...

International Nuclear Information System (INIS)

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices (AC)_p(BC)_p is studied as a function of the repeat period p and orientation G=[001], [110], [111], and [201], using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all p's and G's with respect to bulk disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin epitaxial [110] and [201] and most common-anion [001] superlattices relative to coherent phase separation.

International Nuclear Information System (INIS)

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub ...

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the ...

International Nuclear Information System (INIS)

The removal of tritiated water vapour was tested by use of a small burning apparatus and a clinoptilolite filter. It was found that decontamination factor of about 10"4 could be obtained by a clinoptilolite filter. The adsorption of HTO in the clinoptilolite is caused by the diffusion, so it is necessary that filtration velocity is maintained below 0.01 m/sec. Decontamination factor was not influence by the moisture content of a clinoptilolite and tritiated water vapour once adsorbed on a filter was hardly removed. (auth.).

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued beneath the Si surface. The part of the ...

International Nuclear Information System (INIS)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.

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We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.

Science.gov (United States)

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices ({ital AC}){sub {ital p}}(BC){sub p} is studied as a function of the repeat period {ital p} and orientation {bold G}=(001), (110), (111), and (201), using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all {ital p}'s and {bold G}'s with respect to {ital bulk} disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin {ital epitaxial} (110) and (201) and most common-anion (001) superlattices relative to coherent phase separation.

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

International Nuclear Information System (INIS)

Analytical TEM and high resolution TEM were used in the microstructural characterization of hot-press sintered Si_3N_4-SiC platelets composites. The quantity of sintering additives, Er_2O_3 and AlN, was varied to produce different matrices, e. g. Si_3N_4, #beta#'+#alpha#'-Sialon and #alpha#'-Sialon. Detailed analysis of platelet-sialon matrix interfaces revealed the presence of AlN polytypoids. The polytypoids nucleate preferentially onto the (0001) plane of SiC and growth epitaxially in several ten nanometer layers contributing in this way to crystallize, partially, the matrix intergranular glass pockets contacting the platelets. Possible applications of the phenomena to microstructural control, grain boundary phase control and enhanced creep resistance are discussed. (orig.).

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

British Library Electronic Table of Contents (United Kingdom)

Summary Reactive extrusion was utilised for starch/poly(butylene adipate co-terephthalate) (PBAT) blown film production, using maleic anhydride (MA) and citric acid (CA), alone or combined, as compatibilisers. These compounds (2% w/w) were added to the starch/PBAT (55:45) mixture after dispersion on glycerol. More rigid films, with greater tensile strength (9.82--0.45-MPa), were produced when 2.0% CA was used. The opposite, little homogeneity and poor tensile strength (0.77--0.12-MPa) and elongation (2.67--0.67%) were found in films produced using 2.0% MA. Barrier properties to water vapour were improved by compatibilisers. FTIR analysis showed that CA and MA were able to promote esterification/transesterification reactions. Blends containing CA also showed better phase compatibilisation i...

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The Convective and Orographically-induced Precipitation Study (COPS) has the aim to advance the quality of forecasts of orographically-induced precipitation in complex terrain. COPS is a Research and Development Project of the World Weather Research Program and considered to be one of the largest field campaigns on quantitative precipitation forecasting that has been performed so far. A network of state-of-the-art active and passive remote sensing systems was combined with in total 10 airborne platforms, Meteosat rapid scans and dense networks of standard meteorological instruments during the three months long field phase (June-August, 2007) in south-western Germany/eastern France to observe atmospheric variables in the three spatial dimensions and in time. By the University of Hohenheim, two novel ground-based mobile scanning lidar systems were deployed: a scanning rotational Raman lidar which provides combined measurements of the field of atmospheric temperature ...

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The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a ...

Energy Technology Data Exchange (ETDEWEB)

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant ...

International Nuclear Information System (INIS)

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done ...

Science.gov (United States)

Digital control technology using micro-processor is widely used in Factory Automation area since 1980's. However, the D(sub 2)O Vapour Recovery System in Wolsung 1 N.P.P is controlled by mechanical timer without considering the moisture condition in the R...

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Carbon dioxide is receiving renewed interest as an efficient and environmentally safe refrigerant in a number of applications, including mobile air conditioning and heat pump systems, and hot water heat pumps. Compact heat exchangers for CO{sub 2} systems are designed with small-diameter tubing. The purpose of this study is therefore to provide a better basis for understanding and predicting heat transfer and pressure drop during flow vaporization of CO{sub 2} in microchannels. The ''unusual'' properties of carbon dioxide give heat transfer and two-phase flow characteristics that are very different from those of conventional refrigerants. Examples of these differences are the much higher pressure, the resulting high vapour density, a very low surface tension, and a low liquid viscosity. High pressure and low surface tension has a major effect on nucleate boiling characteristics, and earlier test data have ...

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Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

International Nuclear Information System (INIS)

Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able ...

International Nuclear Information System (INIS)

High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients as a function of concentration. Diffusion coefficients during ...

International Nuclear Information System (INIS)

Distributed Bragg reflectors (DBRs) composed of In_0_._5Al_0_._5P/In_0_._5(Al_yGa_1_-_y)_0_._5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0#<=#y#<=#0.6) and peak reflectivity wavelength (720 nm#<=##lambda##<=#565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of #lambda##approx#670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

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High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy ...

International Nuclear Information System (INIS)

Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd"2Si films. ...

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Full text of publication follows: A porous media solution PORFLO has been developed for the 3-dimensional two-phase flow by describing the process facility in Cartesian or cylindrical coordinates. The local porosity fraction is applied for distinguishing the fluid filled volumes from the solid structures. The solid structure contribute the two-phase flow through the wall friction, flow area and heat transfer. Optionally the solid structure may contain primary liquid of steam generators, steam in the higher temperature and pressure to be condensed or electrical heating power. By using these optional boundary conditions three different process facilities have been analysed. The thermohydraulic solution based on 5-equation approach, where the conservation equations are solved for the liquid and gas (vapour) mass, mixture momentum (giving the velocity only for the mixture), liquid and gas energy, is described shortly. In ...

DEFF Research Database (Denmark)

Zinc oxide (ZnO) and alumina (Al2O3) particles are synthesized by the combustion of their volatilized acetylacetonate precursors in a premixed air-methane flame reactor. The particles are characterized by XRD, transmission electron microscopy, scanning mobility particle sizing and by measurement of the BET specific surface area. Pure (?-)alumina particles appear as dendritic aggregates with average mobile diameter 43-93 nm consisting of partly sintered, crystalline primary particles with diameter 7.1-8.8 nm and specific surface area 184-229 m2/g. Pure zinc oxide yields compact, crystalline particles with diameter 25-40 nm and specific surface area 27-43 m2/g. The crystallite size for both oxides, estimated from the XRD line broadening, is comparable to or slightly smaller than the primary particle diameter. The specific surface area increases and the primary particle size decreases with a decreasing flame temperature and a decreasing precursor vapour pressure. The ...

Energy Technology Data Exchange (ETDEWEB)

Fuel spray and air motion characteristics and combustion in direct injection (DI) diesel engines was studied using computational models of the commercial CFD-code FIRE. Physical subprocesses modelled included Lagrangian spray droplet movement and behaviour (atomisation, evaporation and interaction of spray droplets) and combustion of evaporated liquid spray in the gas phase. Fuel vapour combustion rate was described by the model of Magnussen and Hjertager. The standard k,{epsilon}-model was used for turbulence. In order to be able to predict combustion accurately, the fuel spray penetration should be predicted with reasonable accuracy. In this study, the standard drag coefficient had to be reduced in order to match the computed penetration to the measured one. In addition, the constants in the submodel describing droplet breakup also needed to be adjusted for closer agreement with the measurements. The characteristic time scale of fuel ...

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The possibility of studying the adsorption of acetic acid vapour on coal by the method of multiple attenuated total internal reflection by two proposed procedures has been shown.

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber ...

International Nuclear Information System (INIS)

Nuclear radiation detectors in integral execution were produced by successive epitaxial growth from vapor phase of Zn Te and Cd Se thin layers onto scintillating Zn Se (Te) crystals. The irradiation of combined Zn Se (Te) - Zn Te - Cd Se detectors by Cu_K_a X-rays leads to the appearance of photoreceiver e.m.f., which tends to saturation with the increase of X-ray radiation dose reaching the value of 0.34-0.40 V at 200 R/min. The short circuit current dependence of irradiation dose power is linear. The matching factor for detectors with Zn Te-Cd Se photoreceivers with different doping levels is 0.68-0.92. The absolute monochromatic sensitivity is 0.32-0.35 m A/m W at a quantum efficiency 0.58-0.61 and a time constant 2 x 10"-"4 s. The calculated dose sensitivity for Zn Se(Te)-Zn Te-Cd Se combined detectors at the irradiation with X-rays having effective energy 8.86 keV gives the value 3.9 x 10"-"7 A/cm"2 (R/min); the experimental value of dose ...

Science.gov (United States)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are ...

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for ...

Energy Technology Data Exchange (ETDEWEB)

We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

British Library Electronic Table of Contents (United Kingdom)

Herein, we fabricated MWCNT-OH adsorbed electrospun nylon 6,6 nanofibers by electrospinning and dip coating method. The amount of MWCNT-OH adsorbed to the pure electrospun nylon 6,6 nanofibers was 0.056wt%. The electrical conductivity of MWCNT-OH adsorbed electrospun nylon 6,6 nanofibers was 5.24x10^-^3Scm^-^1. We also investigated the sensing properties of MWCNT-OH adsorbed electrospun nylon 6,6 nanofibers by measuring its response upon exposure to low molecular weight alcohol vapours such as methanol, ethanol, 1-propanol, and 1-butanol. The changes of the electrical resistance of MWCNT-OH adsorbed electrospun nylon 6,6 nanofibers were demonstrated on the basis of hydrogen bonds among the alcohol vapours and hydroxyl groups (-OH) on MWCNT-OH, and amide groups (-NHCO-) in nylon 6,6. The fa...

International Nuclear Information System (INIS)

The production of ozone in a negative corona discharge fed by carbon dioxide with embedded traces of oxygen and water has been studied. The presence of traces of oxygen in both pure and dry CO_2 leads to an increase in nascent ozone concentrations. In contrast, traces of water vapour (0-800 ppm) are shown to rapidly suppress ozone concentrations with the largest decreases being observed at lowest gas pressures in the discharge (300 Torr). The presence of water vapour did not considerably affect the electrical properties of negative dc corona suggesting that a chemical process is responsible for the ozone loss. We have shown that the addition of water up to a concentration of 1500 ppm has only a marginal effect on the processes of ozone formation but the catalytic cycle of ozone destruction involving OH radicals can be the reason for observed decrease in the total ozone concentration with increasing water concentration.

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Two perfluorosulfonic acid membranes, Nafion{sup R} 105 and Nafion{sup R} 115 with the same thickness but different equivalent weights (EW = 1000 g/eq. resp. 1100 g/eq.) were characterised by conductivity measurements at different water vapour activities in the temperature range of 25-70{sup o}C. The results demonstrate that a lower membrane equivalent weight opens the possibility to obtain the needed proton conductivity at lower water vapour activity. This is especially important for those fuel cell applications, in which the cell is operated without external humidification of the fuel gases. (author) 5 figs., 5 refs.

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

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LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.

International Nuclear Information System (INIS)

The article deals with the effects of various hazardous materials in the working environment. Some of these may be detrimental to the safety and health of the worker. The absorption of hazardous substances by the human body is discussed, as well as the effects of toxic substances. The hazardous substances are classified into the following categories: irritants, asphyxiants, anaesthetics and narcotics, carcinogens, mutagens, teratogens, systemic poisons, hazardous particulate matter and the biotransformation of toxic substances. Examples of hazardous substances include: industrial solvents, fumes and vapours, lead, mercury and uranium.

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The effective half-life based on urine bioassay results of Wolsung NPP's worker was calculated. The effective half-life for tritiated water vapour obtained was 5 {approx} 9 days. In comparison to 10 days reported for ICRP-30, it is lower than the corresponding half-life for Reference Man. Also, the half-life was calculated based on intake amount of daily water. According to this result, the metabolism was reviewed.

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1. In order to carry out isothermic crystal growth experiments of YBCO the 123 primary crystallization field was determined by means of phase diagram investigations and crystal growth experiments at different oxygen partial pressure. 2. YBCO single crystals of high crystallographic perfection were grown and conclusions on the flux pinning mechanism were drawn. 3. By means of Liquid Phase Epitaxy (LPE) single crystalline (Tc{approx}90 K; {Delta}T{<=}0.5 K) c- and a,b- YBCO fils have been prepared on NdGaO{sub 3} and LaGaO{sub 3} substrates. The films were characterized structurally and magnetically. 4. Our fist melt textured YBCO ``single crystals`` possess intracrystalline critical current densities >10{sup 4} A/cm{sup 2} at B{<=}2T. The irreversibility inductions are {<=}6 T at 77 K. A simple demonstrator was constructed together with the IFW Dresden and a growth model was developed. 5. Using above all torque ...

International Nuclear Information System (INIS)

The growth of epitaxial MnO(100) and MnO(111) layers on Pd(100) surface has been investigated by spot-profile analysis low-energy electron diffraction, dynamic atomic force microscopy, photoemission and high-resolution electron energy loss spectroscopy, and density functional theory. We have found that despite the large lattice mismatch to the Pd(100) substrate, the MnO(100) layers are kinetically stabilized at low temperatures (?350 deg. C) and at oxygen pressures between 2x10-7 and 5x10-7 mbar. Annealing in ultrahigh vacuum at 650 deg. C or, alternatively, deposition of manganese metal in oxygen pressure -7 mbar causes the transformation of the MnO(100) to a polar MnO(111) surface, which is decorated by triangular pyramids with (100) side facets. It is suggested that the growth of MnO(111) layers is energetically preferred over MnO(100) due to the epitaxial stabilization at the metal-oxide interface.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

Science.gov (United States)

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.

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Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 [mu]m. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 [mu]m. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability the structure. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Out of concern for the global environment, technologies for coal-fired combined cycle power generation are under development throughout the world today, aiming at highly efficient use of coal. Under these circumstances, the authors and others, with the intention of producing a coal-fired combined cycle power generation system with higher plant efficiency, lower construction cost, and higher reliability than conventional systems, proposed a new gasification combined cycle power generation system that differs from the conventional IGCC system. The authors studied system configuration and conducted elementary research necessary for implementing the system. This report deals with the basic concepts of the system and the results of basic studies carried out to realize of the concepts, including a study on alkali metal vapour concentration in relation to heat corrosion; the relation between gas de-dusting temperature and gas alkali metal vapour ...

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Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

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The merits of single stage absorption heat pumps coupled to simple distillation for effluent treatment are discussed. An experimental integrated absorption heat pump effluent purification system (IAHPEPS) was built and operated with water-lithium bromide as a working mixture. This unit has been used to raise the temperature and hence, the vapour pressure of the impure water contained in one vessel, to the point where pure water vapour will distil from impure effluent solution (tap water or brine) and condense in a second vessel used to collect pure water. Pure effluent production rates of between 0.5 and 4.3 kg h{sup -1} were obtained. The actual coefficient of performance (COP{sub A}) and the heat pump effectiveness varied from 1.1 to 1.4 and 0.58 to 0.72, respectively. The results from the small scale systems indicate the likely results from industrial scale units which could be operated with low quality heat such as waste heat, solar or ...

International Nuclear Information System (INIS)

A series of ball-on-disc wear and friction measurements were made for surfaces which have a chemical vapour deposition carbon silicon alloy layer on a carbon substrate (fine grain POCO graphite). Nitrogen ion irradiation was used to improve the wear resistance of the carbon alloy surface. For comparison, measurements were also taken for alumina against alumina. It was found that the lowest friction coefficient and lowest wear occurred for ion irradiated coated samples containing 4% Si in the alloy and that the performance was superior to that of alumina. ((orig.)).

International Nuclear Information System (INIS)

Microbial population and moisture content of traditional herbal medicines contaminated with 3 kinds of aerobic microbes, packed in 5 kinds of plastic packaging materials, followed by irradiation at minimum dose of 5 kGy and stored for 6 months were investigated. The highest reduction of microbial counts during storage was observed on samples packed in polyethylene bags. All of packaging materials used were found to be impermeable to microbes and water vapour. Radiation and packaging materials used acted synergistically to inactivate microbes durind storage. The microbial counts decreased as much as 2 to 4 log cycles during storage. (author).

International Nuclear Information System (INIS)

The foils of various materials were irradiated with "6"0Co with an activity of 11,538 TBq. The minimum radiation dose was 25 kGy. Changes in chemico-physical properties were evaluated by infrared spectroscopy and were not detected after irradiation with 25 kGy. Packing foils were subjected to the following tests: mechanical tests, tests of weld strength, tests of impact resistance, free fall tests, permeability tests for water vapour and microbiological tests. The results of all tests were tabulated. The tests showed that the foils are impermeable for microorganisms and provided the welds are airtight the packed products remain sterile. (J.P.).

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Craters were produced in the surface of a Pt-specimen by plasma discharge. Using a Focussed Ion Beam (FIB), TEM-foils of the cross section of the craters were prepared in order to examine the microstructural changes occurring as a result of the discharge impact. The molten material pushed to the edge of the craters was able to be identified. The grains beneath the craters reached the surface of the crater by a mechanism of epitaxial growth. (orig.)

Science.gov (United States)

Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.

British Library Electronic Table of Contents (United Kingdom)

In this study, wood samples were exposed to light irradiations (direct sunlight, xenon lamp, mercury vapour lamp) and thermal treatments were carried out in dry- and in humid conditions at 90degreeC. One part of the samples was covered by an aluminium plate during light irradiation. The samples under the aluminium plate also suffered considerable chemical changes, monitored by infrared technique and colour measurement. The sunlight produced greater colour change under the aluminium plate than the artificial light sources. During light irradiation, the carbonyl band having two maximum at 1700 and 1746cm-1 increased and the peak of the aromatic skeletal vibration arising from lignin (1510cm-1) decreased together with the guaiacyl vibrations at 1275cm-1. There was absorption decrease at 1174c...

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Treatment of coal or coconut shell activated carbons with either phosgene or chlorine at 180{degree}C followed by washing with methanol or water results in chlorinated carbons with very similar pore structures to their precursors. Water adsorption experiments show that the modified materials are relatively hydrophobic, presumably as a result of replacement of oxygen-containing surface groups by chlorine. Adsorption of the model hydrophobic vapour chloropicrin from humid air is usually better for the modified carbons which, unlike the controls, do not appear to be subject to degradation in performance on ageing in a humid atmosphere. The stability of the modified carbons is probably a consequence of the chlorination of those sites on the control carbons that are prone to ready oxidation or hydroxylation. 1 tab., 2 figs., 17 refs.

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The spray and combustion development in a single-cylinder, direct-injection diesel engine equipped with optical access was examined using a number of complementary techniques. A laser imaging system, based around a pulsed copper-vapour laser synchronised to an intensified CCD camera, was used to obtain images of the four fuel sprays prior to combustion, and to determine the tip penetration of each spray as a function of crankangle. The surface heat flux to the wall of the piston bowl was measured by placing a fast-response thermocouple at the impingement point of one of the sprays, and a two-colour imaging system was used to obtain digital images of the flame temperature and equivalent soot distribution in the cylinder. (author)

International Nuclear Information System (INIS)

When operating a nuclear power plant the necessity arise to eliminate various defects of building constructions, to seal joints and transitional elements. The authors present data concerning the production of a sealing composition made of epoxy resin and used for NPP premises of emergency location. Analytical relations are presented between the properties of the composition (adhesion strength, water absorption and others) and its structure. Physical, mechanical and thermal properties and structural peculiarities are determined in the process of interaction between the filling and binding agents. The composition sustains sealing properties under environmental conditions at he presence of an air - vapour mixture with 160 degrees C"o temperature and 0.3 MPa surplus pressure. (author).

Energy Technology Data Exchange (ETDEWEB)

Means of intensifying heat transfer with nucleate boiling, based on boiling under constrained conditions (in slots, on a capillary-porous surface) are the most promising since a high intensity of heat transfer is ensured. In the present work we attempt to evolve the main assumptions for the physical model of the process of vapour formation under constrained conditions and to extend them to the boiling of cryogenic liquids on surfaces with a capillary-porous deposit; also, the results are given of experimental investigations of heat transfer with the boiling of nitrogen, oxygen and hydrogen at atmospheric perssures and below on capillary-porous surfaces of various metals of different structure produced by an electric arc method of gasothermal spray coating.

British Library Electronic Table of Contents (United Kingdom)

A galactose-specific seed lectin was purified from the legume Spatholobus parviflorus and crystallized using the hanging-drop vapour-diffusion technique. Thecrystals belonged to space group P1, with unit-cell parameters a = 60.998, b=60.792, c = 78.179-, = 101.32, = 91.38, = 104.32. X-ray diffraction data were collected under cryoconditions (100-K) to a resolution of 2.04- using a MAR image-plate detector system mounted on a rotating-anode X-ray (Cu-K) generator. Molecular replacement using legume-lectin coordinates as a search model gave a tetrameric structure.

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This paper presents the application of artificial neural networks to adiabatic flame temperature prediction of hydrocarbon fuels. The investigation was conducted over a wide range of operating conditions in terms of fuel composition, pressure and temperature of reactants, fuel-air equivalence ratio and fuel vapour fraction. Several neural network models for predicting the flame temperature for different applicable fuel ranges were built and examined. The proper preparation of network training data and the appropriate choice of network parameters for achieving better prediction accuracy are discussed. The neural network prediction results were compared with those calculated by a thermodynamic and chemical equilibrium-based computer code - the NASA program CET89. It was shown that trained neural network models can provide the adiabatic flame temperature prediction with a good level of accuracy over a wide range of operating conditions. 16 refs., 5 figs., 1 tab.

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

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The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE goals. Successfully ...

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

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This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

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X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

Science.gov (United States)

We have investigated the stability and catalytic activity of epitaxial overlayers of rhodium on Au(111) and Pd(111). Both surfaces show a strong affinity for hydrogen. We have calculated the energy of adsorption both for a strongly and a more weakly adsorbed species; the latter is the intermediate in the hydrogen evolution reaction. Both the energy of activation for hydrogen adsorption (Volmer reaction) and hydrogen recombination (Tafel reaction) are very low, suggesting that these overlayers are excellent catalysts. PMID:21847482

International Nuclear Information System (INIS)

Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author).

Science.gov (United States)

The initial phase of this study consisted of a survey of existing FGD systems used on larger combustion processes in the NATO countries and Japan.

Science.gov (United States)

Not Available

CERN Document Server

Top quark is extremely sensitive to non-standard CP violating phases. General strategies for exposing different types of phases at the NLC are outlined. SUSY phase(s) cause PRA in $t\\to Wb$. The transverse polarization of the $\\tau$ in the reaction $t\\to b\\tau\

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

This report covers the initial DARPA DTN Phase 3 activities as JPL provided Core Engineering Support

International Nuclear Information System (INIS)

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

International Nuclear Information System (INIS)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu2O have been synthesized on single-crystal SrTiO3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (OPA-MBE). Island growth location has been controlled by using an ex-situ Ga+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. Analysis of Cu2O dot growth on unmodified substrate regions revealed an evolution of dot size and array density. Atomic force microscopy studies show that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of islands. Islands initially formed in the FIB-generated surface topography and filled those features before nucleating on neighboring unmodified surface regions.

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

Energy Technology Data Exchange (ETDEWEB)

Ways of reducing the excessive energy consumption in the Polish sugar industry are examined. The three main areas where energy reduction measures might be taken are: reducing the process heat demand which arises from the need to evaporate excess water from the juice supplied to the crystallisers; improving the effectiveness of the thermal system by moving from the present four-effect evaporation to five-effect evaporation and using crystallisation vapours for juice heating; replacing old steam boilers with more efficient units. Most Polish sugar factories are relatively small, however, and the energy saving measures, all of which require the installation of more modern equipment, are not economically feasible in the short term. Moreover, the stringent limits on atmospheric emissions which come into effect in 1998 will require factories to use low-sulphur coal and install costly glue-gas cleaning equipment. With limited funds available this may mean a further ...

International Nuclear Information System (INIS)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped Thin Film Transistors. In the high ...

Energy Technology Data Exchange (ETDEWEB)

Liquid pipeline codes generally stipulate placement of block valves along liquid transmission pipelines such as on each side of major river crossings where environmental hazards could cause or are foreseen to potentially cause serious consequences. Codes, however, do not stipulate any requirement for block valve spacing for low vapour pressure petroleum transportation, nor for remote pipeline valve operations to reduce spills. A review of pipeline codes for valve requirement and spill limitation in high consequence areas is thus presented along with a criteria for an acceptable spill volume that could be caused by pipeline leak/full rupture. A technique for deciding economically and technically effective pipeline block valve automation for remote operation to reduce oil spilled and control of hazards is also provided. In this review, industry practice is highlighted and application of the criteria for maximum permissible oil spill and the technique for deciding ...

International Nuclear Information System (INIS)

Ten different alloys of zirconium have been tested with regard to the effect of irradiation on their mechanical properties and their sensitivity to environmentally induced failure. Two different environments were used: iodine vapour and liquid cesium with an addition of 2% cadmium. The neutron dose was 10"2"1n/cm"2 (E>1MeV) and the irradiation temperature was about 300 degrees C. All alloy additions increased the irradiation hardening. Especially notable was the large effect of titanium and tin on irradiation hardening. A limited amount of transmission electron microscopy was carried out in order to find an explanation to the effects. The testing in different environments showed that there is no clear correlation between environmental sensitivity and yield stress. For materials of similar yield stress an alloyed material tends to be more sensitive to environmental cracking than a material which only contains oxygen as an impurity. There also seems to be an ...

British Library Electronic Table of Contents (United Kingdom)

Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO2/SiOx /SiO2/Si(100) stacked structure. The chemical composition of SiOx layer was controlled by changing the SiH4, He, and O2 gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 1012 cm-2 carriers are injected to or emitted from Si nanocrystals. The duration of 1 V shift in flatband vo...

Energy Technology Data Exchange (ETDEWEB)

The analyses were carried out using real climate data for the years 1987 and 1989. The course of the indoor climate for year-round free ventilation with a constant flow volume is discussed. Numerous diagrams inform on ambient temperature, water vapour content, the condition of space air, and temperature drops below dew point. For the event of heating of the central part of the church, space air condition, the annual air humidification requirement, and the temperature field in this part of the building are described. (MSK) [Deutsch] Die Untersuchungen wurden mit aktuellen Klimadaten fuer die Jahre 1987 und 1989 durchgefuehrt. Der Verlauf des Raumklimas bei ganzjaehrig freier Klimatisierung mit konstantem Foerderstrom wird erlaeutert. Dabei wird die Raumlufttemperatur, der Wasserdampfgehalt, der Raumluftzustand sowie die Taupunktunterschreitung in zahlreichen Diagrammen aufgezeigt. Weiter werden fuer den Fall der Beheizung des Hauptraums der Kirche der ...

Energy Technology Data Exchange (ETDEWEB)

Chromium containing amorphous hydrogenated carbon films (a-C : H/Cr) have been prepared by simultaneous rf plasma activated chemical vapour deposition of methane and magnetron sputtering of a chromium target. During deposition the substrates were heated (up to 300C) and DC biased (-200 and -600 V) in order to obtain films with high chemical stability. Constant temperature tests were performed at 250C in air with coatings deposited on silicon substrates. The degradation of the coatings was monitored by Raman spectroscopy and reflectance and transmission measurements. The main degradation mechanisms are discussed and the relevant parameters which improve the durability of the coatings are presented. Furthermore, the durability of solar selective, multilayered coatings which were deposited on copper sheets was investigated. Based on accelerated aging tests at different temperature loads in air (at 220C, 250C and 300C) and in a humid environment (80C sample temperature ...

Energy Technology Data Exchange (ETDEWEB)

Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than 250degC. For this process, however, we obtained ...

Energy Technology Data Exchange (ETDEWEB)

For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. ...

International Nuclear Information System (INIS)

In connection with the different cyclical strengths of the two-phase (#alpha# + #beta#) titanium alloy in the case of the acicular and rounded formations of the #alpha#-phase, we have studied, employing the X-ray diffraction method, the phase composition of the alloy and the influence of heat treatment upon it. Using the method of electronic fractography, we examined the fractures in samples destroyed by the asymmetric twisting, in order to find out why the durability of the alloy is dependent upon the #alpha# - phase structure. It has been found that in the BT22 alloy, the decay the #beta#-phase may proceed in two ways; either with the formation of the martensite #alpha#'-phase of the acicular shape or with the separation of the non-martensite round-shaped #alpha#-phase. The character of the phase transformations #beta# ...

Energy Technology Data Exchange (ETDEWEB)

The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular magnetic anisotropy, magneto-optic activity, ...

International Nuclear Information System (INIS)

Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, which is one of the candidate systems for future superconducting ...

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. ...

Energy Technology Data Exchange (ETDEWEB)

The phase space of quantized systems that contain tachyons has been investigated. Interpretation difficulties and unexpected divergences are found when we consider the volume of Lorentz-invariant phase space. These problems can be overcome, however, at the expense of Lorentz invariance.

International Nuclear Information System (INIS)

French English ... Orig. Title Imagerie IRM des lesions focales hepatiques avec les antennes de surface en reseau phase (phased array): apnee ou imagerie haute resolution?.

Science.gov (United States)

Various measurement tools that are used in chaos theory were applied to analyze two-phase pressure signals with the objective of identifying and interpreting flow pattern transitions for two-phase flows in a small, horizontal rectangular channel. These me...

UK PubMed Central (United Kingdom)

Previous studies have shown that iterative in-line x-ray phase retrieval algorithms may have higher precision than direct retrieval algorithms. This communication compares three iterative phase...Full Text Available

CERN Document Server

The phase transition is a performance measure of the sparsity-undersampling tradeoff in compressed sensing (CS). This letter reports, for the first time, the existence of an exact phase transition for the $\\ell_1$ minimization approach to the complex valued CS problem. This discovery is not only a complementary result to the known phase transition of the real valued CS but also shows considerable superiority of the phase transition of complex valued CS over that of the real valued CS. The results are obtained by extending the recently developed ONE-L1 algorithms to complex valued CS and applying their optimal and iterative solutions to empirically evaluate the phase transition.

British Library Electronic Table of Contents (United Kingdom)

We investigated phase transition of ilmenite-type AgSbO3 to pyrochlore by post-heat treatment and the synergy effect of the mixed phases of AgSbO3 on the photocatalytic activities to enhance the activities. The AgSbO3 with an ilmenite structure was prepared by a cation-exchange method. Phase transition from the ilmenite to pyrochlore occurred by proper control of post-heat treatment. The sample that was obtained by post-heat treatment of ilmenite-type AgSbO3 at 660^oC for 3h consisted of both of the ilmenite and pyrochlore phases, and the sample at 685^oC for 4h mainly consisted of the pyrochlore phase. Together with an increase in the ratio of the pyrochlore phase, the optical absorption spectra blue-shifted. The band gaps of single phases of the ilmenite and the pyrochlore were 2.4 and 2...

Science.gov (United States)

... and high-quality photospheric-phase Type II SN spectra to constrain core- collapse SN explosions, massive star evolution, and distances in the Universe ...

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Science.gov (United States)

... Accession Number : ADA067692. Title : Flood Plain Information. Kenai River, Phase I. Kenai Peninsula Borough, Alaska. ...

International Nuclear Information System (INIS)

... 5. Formation of the annular two-phase flow regime, with a wavy film on the

Science.gov (United States)

No Abstract Available

International Nuclear Information System (INIS)

In order to understand the detail transient two-phase flow structure, more advanced two-phase flow instrumentation is required. One advanced technique for flow visualization is real-time neutron radiography. Reconstruction method of visualized radiographic image of liquid metal two-phase flow generated by the real-time neutron radiography system is proposed in this paper. Image processing techniques for noise reduction and image enhancement are discussed in detail. (author).

International Nuclear Information System (INIS)

In a three-phase tri-axial cable, the magnetic interaction between the phases makes the loss measurement by an electromagnetic method very complex. We developed the theoretical background showing that three-phase AC loss measurements by the electromagnetic method are, in principle, possible. We then implemented this theory in practical measurements on a 3 m long, tri-axial cable fabricated from RABiTS (rolling-assisted biaxially textured substrate) coated conductor. Initially, the proposed measurement technique was implemented in the simpler cases when the three cable phases are 180"0 out of phase, i.e. (0"0, 180"0, 360"0) or (0"0, 360"0, 180"0) rather than (0"0, 120"0, 240"0) as in a traditional three-phase system. For these cases, the currents in the phases are either in phase (360"0 phase ...

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

Hepatocellular Carcinoma

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Not Available

Science.gov (United States)

No abstract available.

British Library Electronic Table of Contents (United Kingdom)

This paper describes phase-retrieval approaches in music by focusing on the particular case of the cyclic groups (beltway problem). After presenting some old and new results on phase retrieval, we introduce the extended phase retrieval for a generalized musical Z-relation. This concept is accompanied by mathematical definitions and motivations from computer-aided composition. We assume from the reader basic knowledge of groups, topological groups, group algebras, group actions, Lebesgue integration, convolution products, and Fourier transform.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The results of real-time neutron diffraction measurements during the superconducting phase formation process in the Bi(Pb)-Sr-Ca-Cu-O system are reported. A Sr-Ca-Cu-O type precursor, with the same stoichiometry as the 2223 phase, was used as starting material, and the temperature range favorable to the formation of the 2223 phase was investigated. The diffraction patterns were processed by a multiphase Rietveld refinement. The formation and decomposition of the 2201 and 2212 phases were directly observed. Experimental evidence on the existence of a partially melted phase in the range 855-860 degrees C, involved in the formation of the 2223 phase, is discussed. 14 refs., 9 figs., 1 tab.

International Nuclear Information System (INIS)

Here we reported a two-step procedure for preparing a novel polymeric based solid-solid phase change heat storage material. Firstly, a copolymer monomer containing a polyethylene glycol monomethyl ether (MPEG) phase change unit and a vinyl unit was synthesized via the modification of hydrogen group of MPEG. Secondly, by copolymerization of the copolymer monomer and phenyl ethylene, a novel polymeric based solid-solid phase change heat storage material was prepared. The composition, structure and properties of the novel polymeric based solid-solid phase change material were characterized by IR, "1H NMR, DSC, WAXD, and POM, respectively. The results show that the novel polymeric based solid-solid phase change material possesses of excellent crystal properties and high phase change enthalpy.

International Nuclear Information System (INIS)

Lithium ammonium sulfate (LAS) undergoes a phase transition at Tsub(c1) = 459.5deg K from a paraelectric phase (phase 1) to a ferroelectric phase (phase II) and again at Tsub(c2) = 283deg K to a polar ferroelastic phase (phase III). Proton spin lattice relaxation investigations in the temperature range 480-77deg K at 10 MHz show discontinuous changes in Tsub(1) at the transition temperatures, indicating first order phase transitions. The absence of the slow motion region (#omega#sub(not)tausub(not)>>1) shows that the ammonium ions are reorienting fast enough to keep the resonance absorption line narrow down to liquid nitrogen temperatures. The possibility of a second minimum and a low activation energy, Esub(a) = 2.659 kcal/mole, in phase III suggest the possibility of tunnelling of the protons ...

Energy Technology Data Exchange (ETDEWEB)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results imply there are at least two sources of TED ...

International Nuclear Information System (INIS)

The profile imaging technique is used to study the oxidation of ZnTe and InP surfaces induced by in situ reaction due to the electron beam of the microscope and by ex situ heating in air. For both materials, in situ reaction with the electron beam resulted in desorption of the anion species and the formation of the metal oxide. The observation of In metal particles, and the fact that the rate of formation of In_2O_3 was substantially reduced by an improvement of the vacuum near the specimen region, suggested that the presence of oxygen is not involved in the desorption process. The ex situ heating of ZnTe up to 260 degrees C in air resulted in crystals of ZnO and Te metal, generally in a layered surface region with the sequence of ZnTe/Te/ZnO. The large Te crystals usually had an epitaxial relationship with the bulk ZnTe but the small ZnO crystals had random orientations. The ex situ heating of InP to 380 degrees C in air only gave rise to small crystals of In_2O_3 ...

International Nuclear Information System (INIS)

A novel technique is proposed for the growth of an InN film on a GaN/Al2O3(0001) template by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). The method involves 1) InN growth under an In-rich condition and 2) additional nitrogen radical irradiation after the InN growth under an In-rich condition. Excess In that appeared on the InN surface in the InN growth under an In-rich condition is transformed to InN by the additional nitrogen radical irradiation. The effective V/III ratio is easily controlled by monitoring the intensity in a reflection high-energy electron diffraction (RHEED) pattern. The growth of the InN film by repeating the InN growth under an In-rich condition and the additional nitrogen radical irradiation is also demonstrated. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

International Nuclear Information System (INIS)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam injected through a sub-micron dimension ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the ...

International Nuclear Information System (INIS)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the possibility to produce submicrometer patterns by selectively modifying film properties from superconductive to normal or insulting.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on sub-mm grain-size poly-Ge. We have also ...

Energy Technology Data Exchange (ETDEWEB)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a transconductance of ...

Energy Technology Data Exchange (ETDEWEB)

Modelization of crack propagation and theoretical prediction of rupture are the two main objectives of researchers in stress corrosion cracking. Nevertheless, to reach this aim, the behavior of the passive film which appears spontaneously on the substrate in contact with an environment has to be known. This structural and mechanical characterization is all the more difficult because the number of parameters is important: crystallinity rate, defects concentration, thickness (about a few nanometers), electric field, chemical composition (a lot of oxides are present), peeling layers (atomic structure for example) and some hypothesis can be made about their multi-layer structure, their chemical composition or their epitaxial character... Passive films formed on 316L or 304L stainless steels in different aqueous solutions (in ambient air, in MgCl{sub 2} at 117 deg. C...) have been studied and some important remarks about their mechanical properties are made (brittle ...

International Nuclear Information System (INIS)

Phase transformations occuring during cold deformation in hardened #alpha#+#beta# titanium alloy of the Ti-Al-Mo-Zr-Sn-Si system with 10% summary content of alloying elements are studied by X-ray diffraction analysis. Two stages of trapsformation of metastable #alpha#''-phase are found. A conclusiop is made that ability of the alloy containing #alpha#''-phase to cold deformation is determined by the presence of favourable texture, by high degree of metastability and by volume portion of #alpha#''-phase in the alloy structure.

Energy Technology Data Exchange (ETDEWEB)

The author shows in this paper an interesting relation between elementary and topological excitations in the antiferromagnetic and d-wave superconducting phases of the t-J model at two dimensions. The topological spin and charge excitations in one phase have the same dynamics as elementary excitations in the other phase, except the appearance of energy gaps. Moreover, the transition from one phase to another can be described as a quantum disordering transition associated with the topological excitations. Based on the above picture, a plausible phase diagram of t-J model is constructed.

Energy Technology Data Exchange (ETDEWEB)

CIRNAT, a one-dimensional code for natural circulation analysis, was described. The homogeneous approach was adopted for the two-phase flow regime and different heat transfer regimes were considered. The code was exhaustively tested for one-phase flow systems. For two phase flows a boiling/condensing system was simulated. The results are qualitatively correct but the oscillations observed at the system were not captured by the model. Other two-phase flow tests must be done to show the limits of the homogeneous approach before the introduction of a more complex model. (author)

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

International Nuclear Information System (INIS)

Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation and further annealing on composition, electronic and crystalline structure of Si ...

Energy Technology Data Exchange (ETDEWEB)

Ultra High Vacuum (UHV) test setup for electron gun testing has been developed. The development of next generation light sources and accelerators require development of klystron as a radio frequency power source, and in turn electron gun. This UHV electron gun test setup can be used to test the electron guns ranging from high average current, quasi-continuous wave to high peak current, single pulse etc. An electron gun has been designed, fabricated, assembled and tested for insulation up to 80 kV under the programme to develop high power klystron for future accelerators. Further testing includes the electron emission parameters characterization of the cathode, as it determines the development of a reliable and efficient electron gun with high electron emission current and high life time as well. This needs a clean ultra high vacuum to study these parameters particularly at high emission current. The cathode emission current, work function and vapour pressure of ...

Energy Technology Data Exchange (ETDEWEB)

Climates at regional scale are strongly dependent on the interaction between atmosphere and its lower boundary, the oceans and the land surface mosaic. Land surfaces influence climate through their albedo, and the aerodynamic roughness, the processes of the biosphere and many soil hydrological properties; all these factors vary considerably geographically. Land surfaces receive a certain portion of the solar irradiance depending on the cloudiness, atmospheric transparency and surface albedo. Short-wave solar irradiance is the source of the heat energy exchange at the earth`s surface and also regulates many biological processes, e.g. photosynthesis. Methods for estimating solar irradiance, atmospheric transparency and surface albedo were reviewed during the course of this project. The solar energy at earth`s surface is consumed for heating the soil and the lower atmosphere. Where moisture is available, evaporation is one of the key components of the surface energy balance, because the ...

International Nuclear Information System (INIS)

Design improvements are being incorporated into the heavy water management systems at Wolsong 2,3 and 4 to reduce the load on the vapour recovery driers and upgraders and the heavy water losses via the stack. There will also be improvements to monitor heavy water and tritium releases. This paper describes the improvements, gives background on heavy water balance mechanism, the historical trends for heavy water recovery/losses and estimated dose to the member of the public critical group resulting from the airborne and waterborne releases. The measured tritium activity levels in the heat transport system (HTS) and moderator system at Wolsong 1 are given. Using these activity levels and heavy water loss data, tritium losses from the dried and ventilated areas are estimated. A qualitative assessment of expected heavy water and tritium releases has been performed for Wolsong 2, 3 and 4. CANDU 6 plants continue to perform well in that heavy water losses are small and ...

International Nuclear Information System (INIS)

The world's 500 million road vehicles using internal combustion engines account for roughly half of global oil consumption and, in Italy, for about 50% of all nitrogen oxide and 90% of carbon monoxide emissions. In efforts to conserve petroleum reserves and reduce air pollution, research programs are being conducted to develop hydrogen fueled automotive engines. Hydrogen combustion products are carbon dioxide free, and when burned with a large excess of air, this fuel produces water vapour and only small amounts of nitrogen oxides. Hydrogen fueled vehicles can be made to operate in a dual fuel mode so as to allow the use of petrol or diesel fuel in travel over long distances. Currently, because technical and economic difficulties relevant to hydrogen fuel storage limit driving range and payload (there are bulk and weight problems in compressed gas and metal hydride storage systems, and cost problems in cryogenic storage), only limited research programs are being ...

International Nuclear Information System (INIS)

This paper deals with the calculations of 3D nuclear heat generation profile in the charcoal filter and subsequently the commencement time of Primary Containment Cleanup (PCC) system of 540MWe Pressurized Heavy Water Reactor (PHWR). Fuel failure is predicted due to overheating of the fuel under loss of Coolant Accident (LOCA) without Emergency Core Cooling System (LOCA without ECCS). Subsequently fission product gasses along with water vapours are released to Reactor Building (RB) atmosphere. Plate-out and water trapping mechanism stabilizes the concentration of significant fission products i.e. radioiodines in about 4 hours before being circulated through charcoal filters of Containment Cleanup system. After cleaning up the RB atmosphere, it is discharged to outside atmosphere through stack. The isotopes of radioiodine emit beta and gamma radiations. Gamma radiations are partly stopped within the charcoal and heat is generated. The part of gamma radiations ...

Energy Technology Data Exchange (ETDEWEB)

The two-phase flow program is directed at understanding the hydrodynamics of two-phase flows. The two-phase flow regime is characterized by a series of flow patterns that are designated as bubble, slug, churn, and annular flow. Churn flow has received very little scientific attention. This lack of attention cannot be justified because calculations predict that the churn flow pattern will exist over a substantial portion of the two-phase flow zone in producing geothermal wells. The University of Houston is experimentally investigating the dynamics of churn flow and is measuring the holdup over the full range of flow space for which churn flow exists. These experiments are being conducted in an air/water vertical two-phase flow loop. Brown University has constructed and is operating a unique two-phase flow research facility specifically designed to address flow ...

Energy Technology Data Exchange (ETDEWEB)

In order to study the two-phase natural circulation and flow termination during a small break loss of coolant accident in LWR, simulation experiments have been performed using two different thermal-hydraulic loops. The main focus of the experiment was the two-phase flow behavior in the hot-leg U-bend typical of BandW LWR systems. The first group of experiments was carried out in the nitrogen gas-water adiabatic simulation loop and the second in the Freon 113 boiling and condensation loop. Both of the loops have been designed as a flow visualization facility and built according to the two-phase flow scaling criteria developed under this program. The nitrogen gas-water system has been used to isolate key hydrodynamic phenomena such as the phase distribution, relative velocity between phases, two-phase flow regimes and flow termination mechanisms, whereas the Freon ...

International Nuclear Information System (INIS)

Based on a recently introduced phase X-ray imaging approach, a dual-detector prototype was developed for in-line X-ray phase imaging and phase retrieval utilizing a micro-focus X-ray source and two computed radiography (CR) cassette detectors. The system was built on a horizontal optical rail to facilitate manual adjustment of the positions of the X-ray source, the sample and the detectors. The novel design of the detector-1 is essential, it detects a portion of radiation to form an attenuation image; allows the rest of radiation to reach the detector-2 to form a phase contrast image, and the two images are used to retrieve a phase map. The two detectors are balanced for optimal phase-retrieval with reasonable radiation dose to the object to be imaged. The system was examined in terms of the linearity, the fractions of the X-ray photons detected by the two ...

Energy Technology Data Exchange (ETDEWEB)

The application of multi-objective genetic algorithms for green building design in two phases were presented in order to better help designers in the decision-making process. The purpose is to minimize two conflicting criteria: the life-cycle cost and the life-cycle environmental impact. Environmental impact criteria examined include energy and non-energy natural resources, global warming, and acidification. Variables focus on building envelope-related parameters. The application of multi-objective genetic algorithms is divided into two phases. The first phase intends to help designers in understanding the trade-off relationship between the two conflicting criteria. The second phase intends to refine the performance region that is of the designer's interest. The results after the two-phase application of the multi objective genetic algorithm were then presented. 13 refs., 4 ...

Energy Technology Data Exchange (ETDEWEB)

A simple tube-in-tube heat exchanger system for thermal energy storage employing stearic acid as PCM has been investigated. The performance and heat transfer characteristics of such a system were studied. Phase transition temperature range and times were measured and the speed of the phase transition front was computed. The melting front was found to move in the radial direction inward as well as in the axial direction from the top toward the bottom of the phase change material PCM tube. The speed of the melting front is enhanced by a convection heat transfer mechanism in the melted PCM. The heat transfer rate and, consequently, phase transition time can be altered by changing the water inlet temperature to the heat exchanger. In addition, a faster phase transition is realized by placing the heat exchanger in a horizontal position rather than a vertical one. (Author)

Energy Technology Data Exchange (ETDEWEB)

Ternary diagrams are commonly used to provide a graphic representation of equilibrium fluid phase behavior for systems as diverse as distillation columns and miscible gas floods of oil reservoirs. The phase envelope, and the position of the critical point on it, are important to enhanced oil recovery engineers who are involved with miscible gas flood design. In the past, phase equilibrium data were laboriously plotted on the ternary diagram and special graphic techniques were utilized to locate the critical point on the phase envelope. This work presents a computerized curve fitting method to generate the phase envelope from a given set of phase equilibrium data and then use the tie-line slopes to position the critical point. Experimental data are included and show excellent agreement with this new method.

Energy Technology Data Exchange (ETDEWEB)

Recently the authors showed that tetrazolium salts can be obtained during the oxidation of substituted 1,3,5-triarylformazans with potassium permanganate in a two-phase organic solvent-water system. The role of phase-transfer catalyst in this reaction is played by the tetrazolium salt, which is formed in a small amount as the result of oxidation of the formazan at the phase boundary. The method is distinguished by its extreme simplicity. However, the yield of the tetrazolium salts fluctuates within wide limits and does not exceed 62%. This is due to the fact that as the reaction proceeds the pH of the aqueous phase increases from 6 to 12. At the same time it is known that tetrazolium salts are unstable in aqueous alkaline solutions. They found that if the aqueous phase is replaced by aqueous hydrochloric acid (5 wt. %) the yields of the tetrazolium salts (Ia-g) are increased to ...

International Nuclear Information System (INIS)

The magnitude of electric and magnetic fields around a high voltage three-phase transmission line was studied. A three-phase transmission circuit with parallel conductors produces rotating elliptic electric and magnetic fields. This study investigated the optimum arrangement of the phase conductors to minimize the maximum value of the magnetic flux density and to minimize the intensity of the resultant electric field. Two different types of high voltage double circuit transmission lines of 400 kV were considered. The optimum arrangement of the phase conductors was determined. It was concluded that the optimum arrangement can be easily applied to already constructed high voltage transmission lines by properly interchanging the phase conductors at the substations. 10 refs., 1 tab., 4 figs.

British Library Electronic Table of Contents (United Kingdom)

A localization criterion is proposed for the crystal-liquid phase transition (PT). According to this criterion, the PT begins when the E d/k b T ratio reaches a boundary value E d(s)/k b T m such that a solid phase is present above it and a liquid phase is present below it in a phase diagram. Here, E d is the energy of atom delocalization, k b is the Boltzmann constant, T is the temperature, and E d(s) is the delocalization energy for a solid phase at melting point T m. This criterion is shown to generalize the Lindemann criterion of melting to the case of crystallization and the L?ven criterion of crystallization to the case of melting. This localization criterion is found to be applicable for both normally melting substances and substances that melt with a decrease in the specific volume...

International Nuclear Information System (INIS)

An iterative phase retrieval algorithm was previously investigated for in-line x-ray phase imaging. Through detailed theoretical analysis and computer simulations, we now discuss the limitations, robustness, and efficiency of the algorithm. The iterative algorithm was proved robust against imaging noise but sensitive to the variations of several system parameters. It is also efficient in terms of calculation time. It was shown that the algorithm can be applied to phase retrieval based on one phase-contrast image and one attenuation image, or two phase-contrast images; in both cases, the two images can be obtained either by one detector in two exposures, or by two detectors in only one exposure as in the dual-detector scheme.

International Nuclear Information System (INIS)

A survey is presented of the principles and practice of tailoring sintering liquid composition and processing cycle to enable crystallisation of intergranular phases in silicon nitride and sialon ceramics. Critical features in sialon ceramics are the O/N balance in residual glasses and post-sintering heat-treatment temperatures to enable nucleation of either intermediate phases at constant composition or oxide phases with re-partitioning of non stoichiometric components in #beta#' or #alpha#' solid solutions. Crystallisation of disilicate phases in non-sialon compositions exemplifies a problem in control of polymorphs with differing atomic volumes. Crystallisation of intergranular phases has an influence mainly on high-temperature mechanical and environmental behaviour of these ceramics. (orig.).

International Nuclear Information System (INIS)

Phase contrast X-ray imaging has been studied intensively using X-rays from synchrotron radiation and micro-focus X-ray tubes. However, these studies have revealed the difficulty of this technique's application to practical medical imaging. We have created a phase contrast imaging technique using a molybdenum X-ray tube with a small focal spot size for mammography. We identified the radiographic conditions in phase contrast magnification mammography with a screen-film system, where edge effect due to phase contrast overcomes geometrical unsharpness caused by the 0.1 mm-focal spot of a molybdenum X-ray tube. The edge enhancement due to phase imaging was observed in an image of a plastic tube, and then geometrical configuration of the X-ray tube, the object and the screen-film system was determined for phase imaging of mammography. In order to investigate a ...

International Nuclear Information System (INIS)

This paper describes a long term course of research into the fundamentals of two phase flow regime dynamics that had lead to a differential description of regime properties. The development has included experiment, microscale simulation, and mathematical averaging to produce a dynamic equation for interfacial area.

Energy Technology Data Exchange (ETDEWEB)

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min{sup -1}. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The {beta}-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and ...

Science.gov (United States)

The flow of water through a dam of fairly arbitrary shape is examined in the limit of large frictional drag on the flow. The relation of the problem to the one-phase Stefan problem and a problem of anodic smoothing is explored. Monotonicity and uniqueness...

Energy Technology Data Exchange (ETDEWEB)

It is shown that calculation of the anomalous expectation values for the massless Gross-Neveu model in the Hartree-Fock approximation indicates the presence of an ordinary chiral phase transition if the coupling constant has the normal sign (g > 0) and of a different transition of the superconductivity type if g < 0.

Energy Technology Data Exchange (ETDEWEB)

Anatomical specimens and normal persons were studied by gradient echo MR imaging to determine the influence of different echo times (TE) on bone marrow contrast. First of all, six normal persons were studied to determine specific echo times for in-phase and opposed-phase states. Using different sequences bone marrow contrast in isolated femoral bones was determined and compared to results of pathological exams. Red bone marrow had no signal on opposed-phase images; contrast between red and yellow marrow was higher on opposed-phase than on in-phase images. Bone marrow lesions can be expected to be visualised with high signal on opposed-phase images; this technique should be especially suited for MR imaging of bone marrow. (orig.).

UK PubMed Central (United Kingdom)

[Leu]- and [Met]enkephalin from thoracic ganglia of the shore crab Carcinus maenas have been purified to homogeneity by a reversed-phase HPLC procedure. Automated gas-phase sequencing revealed a primary...Full Text Available

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

Science.gov (United States)

This cost-effectiveness analysis supports the proposed effluent limitations guidelines and standards for the Metal Products and Machinery Industry (MP and M) Phase I Industry. The report assesses the cost-effectiveness of five regulatory options for indir...

UK PubMed Central (United Kingdom)

A solid-phase radioimmunoassay employing ¹²⁵I-labeled enterotoxins and polystyrene tubes coated with specific antibody has been developed for assaying the relative concentrations of antibodies...Full Text Available

UK PubMed Central (United Kingdom)

The Δ- and Λ-isomerism of octahedral metal complexes is employed as a source of chirality for inducing chiral nematic phases. By applying a wide range of chiral metal complexes as a...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A safety analysis code to design a pressurized water reactor and to obtain the licenses including entire proprietary rights is under development in domestic R and D project. The tasks of KAERI is to develop the constitutive relations including models for defining flow regimes and flow regime related models for inter-phase friction, wall frictions, wall heat transfer, and interphase heat and mass transfer in the two-phase three-field equations. In this paper, the process will be presented for choosing the best flow regime maps which occur in gas-liquid two-phase flow in horizontal and vertical tubes.

Science.gov (United States)

The phase space beam analyzer is a measurement instrument that is applied in laser technology to perform analyses of the spatial and angular distribution of rays. We are interested in this instrument as a means to characterize non-coherent light sources. In this context, a closer look at the tolerances of this optical instrument was considered useful. Having a so-called quadrupole lens as a key element, the phase space beam analyzer is a device that features anamorphic optical properties. To describe these anamorphic properties, recurrence was made to a description by extended ray-transfer matrices. This formalism allows for an analysis of the alignment tolerances of the phase space beam analyzer and facilitates a study of the sensitivities of the instrument. The analysis is complemented using numerical ray tracing.

Science.gov (United States)

... CHANNELS, TWO PHASE FLOW, WAVES, IGNITERS, GAS FLOW, HOWITZERS, CARTRIDGE CASES, COMBUSTIBLE CARTRIDGE CASES. ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

... as time delay shifters for large-area phased arrays in military (MILSTAR) as well as commercial (Sky phone and other satellite communication) systems, ...