Energy Technology Data Exchange (ETDEWEB)

Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

Science.gov (United States)

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical ...

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Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of ...

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Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.

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This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

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The passive films formed in stainless steels are thin and fine oxide films, a high corrosion resistance can be provided by these films. This study formed SiO2 protective coating on the substrate of SUS 304 stainless steels by chemical vapor deposition using TEOS-O3 system. Firstly, relations of substrate temperature and deposition rate of films, chemical composition, refractive index of films were investigated. Then, the corrosion resistance of SUS 304 stainless steels coated SiO2 films was examined by activation time and an anodic polarization curve in 1 kmol[center dot]m[sup -3] HCl solution. The results were obtained as follows. Thickness of SiO2 films linearly increases with time at the deposition temperature of 473 to 673 K. Si-OH bonds would disappear above the deposition temperature of 573 K, almost perfect SiO2 films were obtained. ...

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In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

Energy Technology Data Exchange (ETDEWEB)

Solid recycling of AZ31 Mg alloy with vapor deposition coating layer of high purity Mg was evaluated. In the open die forging experiments, two AZ31 Mg alloy specimens with the pure Mg layer were sufficiently bonded by forging at 673 K. Furthermore, the Al and Zn of the AZ31 substrate diffused up to the center of the pure Mg layer. By the theoretical analysis, it is suggested that the grain boundary diffusion enhanced by grain refinement due to hot forging contributes to the solid state bonding of the specimens. Also, the solid recycled specimen was fabricated from the AZ31 Mg substrate with pure Mg layer by hot extrusion at 673 K. The solid recycled specimen showed almost the same tensile properties as the virgin extruded specimen. This is probably related not only to the grain boundary diffusion but also severe plastic deformation by hot extrusion. (orig.)

CERN Document Server

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO 2 Substrates

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high resolution SEM and a x-ray diffractometer, ...

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Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize ...

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Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical ...

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques for producing high-quality solar cell metallization patterns have been investigated, developed, and characterized. During the early stages, preliminary investigations were carried out on a variety of promising laser-assisted metallization schemes, and the best of these was selected for further development. A comprehensive literature search initially yielded information on state-of-the-art laser-assisted techniques for metal deposition such as laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. Initial experiments on laser-enhanced electroplating yielded very promising results with linewidths as narrow as 25 ..mu..m and local plating speeds as high as 12 ..mu..m/s being achieved. Metal deposition experiments were carried out utilizing laser-assisted pyrolysis of a variety of metal-bearing polymer films and ...

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We present a 1-D heat transfer, melting, vaporization and resolidification model describing the interaction of a scanning continuous-wave laser with a metal surface wherein the beam power is constant. A physical model based on the Stefan problem is developed with appropriate boundary conditions. The effects of processing parameters on process variables are investigated numerically by varying beam diameters, scan speeds and substrate temperatures for Nickel. Relations are derived for the times to initiate melting, to initiate vaporization, to reach maximum melting depth, for melting-resolidification, and for maximum melting and vaporization depths. Surface temperatures are compared with approximate closed form solutions. (Author)

Energy Technology Data Exchange (ETDEWEB)

In order to apply chemical-looping combustion to a practical power plant, carbon deposition on the solid particle is one of the key problems to be overcome. Six kinds of solid particles were examined to clarify the kinetic behavior of carbon deposition. The effects of the solid composition, feed gas composition, and reaction temperature on carbon deposition were investigated by thermogravimetrical reactor on the basis of NiO/YSZ particle. From the viewpoints of both reactivity and resistance against carbon deposition, the particle of NiO mixed with YSZ (i.e., yttria-stabilized zirconia) was found to be a good candidate for chemical-looping combustion. It has been observed that carbon deposition could be completely avoided with very low concentration of water vapor. By means of a proposed model, the condition that carbon deposition would be ...

Energy Technology Data Exchange (ETDEWEB)

The ink jet printing technology is a relatively novel technique in development of organic electronic devices. The technique consists of working out depositions of organic layers by a piezo-based ink jet printer. In this work polymer conducting films deposited by ink jet printing technique on different plastic substrates has been demonstrated. The poly(3,4-ethylenedioxythiofene)/poly(4-styrenesulfonate) [PEDOT/PSS] and glycerol-modified PEDOT/PSS [G-PEDOT/PSS] were used like conducting inks to be applied on polyester and polyethylene terephthalate (PET) substrates. By means of the change of substrate associated to the deposition number or type of polymer ink used for printing of the conducting films, the sheet resistance can be modified. Such a behavior suggests that plastic substrate fulfills an important role for the changing of sheet ...

International Nuclear Information System (INIS)

The possibilities to grow isolated structures of complex oxides by pulsed laser deposition through stencils were investigated. A stencil consisting of a SiN membrane with apertures of several hundred nanometers embedded in a Si chip is placed in front of a heated substrate (up to 750 degrees Celsius). Deposition through these apertures results in resistless, direct patterning by local deposition of complex oxides like ferroelectric Lead Zirconate Titanate. The created isolated structures were analyzed by AFM imaging. Under-deposition, in this work called broadening, is inevitable during stencil deposition and is depending on deposition parameters, especially pressure. Different causes of broadening are mapped and discussed.

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

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Neutron Coded Aperture Imaging is a nondestructive imaging technique that utilizes neutrons scattered from an object through specially designed apertures. Coded Aperture Imaging is an alternative technique to Computed Tomography for three-dimensional imaging. Coded Aperture Imaging has the advantage that all of the three-dimensional information is contained in a single image, whereas Computed Tomography requires several images or projections. This technique has been implemented by other using photographic film as an image recording medium and optical reconstruction or decoding of the images. In this work, the possibility of using a real-time neutron video camera to record the images, followed by digital decoding methodology has been investigated. Because only a small fraction of the neutrons incident on the object are scattered to the neutron camera, a new neutron beamport facility, with a larger neutron flux (7.3 x 10[sup 7] n/cm[sup 2]/s) than the previous facility was constructed. A ...

International Nuclear Information System (INIS)

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

International Nuclear Information System (INIS)

Iron oxide films have been deposited on Si(100) substrates by chemical vapour deposition (CVD) of iron(III) tert-butoxide ([Fe(O "tBu)_3]_2) in the temperature range 350-450 deg. C. The precursor flux and substrate temperature were varied to control the phase composition, average grain size and film thickness. The nature of substrate and deposition temperature markedly influence the morphology and iron-oxygen stoichiometry in the CVD deposits. Phase transformations in iron oxide films were achieved through precise local and periodic heating of the films by interfering laser beams. The interaction of iron oxide films with short laser pulses (Nd:YAG, 355 nm) induced partial transformation of hematite (#alpha#-Fe_2O_3) to magnetite (Fe_3O_4) or magnetite to wuestite (Fe_1_-_xO), respectively. The phase characterization and morphology of the ...

Energy Technology Data Exchange (ETDEWEB)

The excellent high temperature strength and thermal conductivity of molybdenum-base alloys provide attractive features for components in advanced magnetic and inertial fusion devices. Refractory metal alloys react readily with oxygen and other gases. Oxidized molybdenum in turn is susceptible to losses from volatile molybdenum trioxide species, (MoO3)m, in air and the hydroxide, MoO2(OH)2, formed from water vapor. Transport of radioactivity by the volatilization, migration, and re-deposition of these volatile species during a potential accident involving a loss of vacuum or inert environment represents a safety issue. In this report we present experimental results on the oxidation, volatilization and re-deposition of molybdenum from TZM in flowing air between 400 and 800°C. These results are compared with calculations obtained from a vaporization mass transfer model using chemical thermodynamic ...

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Cathodic arc deposition is an established and industrially applied technique for the formation of nitrides (e.g. TiN); it can also be used for metal oxide thin film formation. A cathodic arc plasma source with the desired cathode material is operated in an oxygen atmosphere of appropriate pressure, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on accelerator components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Optical waveguide structures can be formed by refractive index variation ...

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

International Nuclear Information System (INIS)

Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.

Energy Technology Data Exchange (ETDEWEB)

A radio frequency sputtering apparatus with a pair of targets has been developed for depositing a film of uniform thickness onto a complex-geometric specimen such as the retainer of a ball bearing. The deposition characteristics of the apparatus were compared with those of the conventional sputtering apparatus. Lubrication properties of MoS/sub 2/ films made by these devices were also compared under a variety of conditions. Finally, friction and wear of MoS/sub 2/ films applied to angular-contact type ball bearings of 20 mm bore were studied in air, nitrogen and vacuo. The two-target sputtering has an advantage mentioned above. However, the films deposited by the method exhibited a rather short wear life because of the temperature rise of the substrate during ion bombardment and during the sputtering process. This temperature dependence was observed in films on those substrates that ...

Energy Technology Data Exchange (ETDEWEB)

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

Energy Technology Data Exchange (ETDEWEB)

We have researched several new focused ion beam (FIB) micro-fabrication techniques that offer control of feature shape and the ability to accurately define features onto nonplanar substrates. These FIB-based processes are considered useful for prototyping, reverse engineering, and small-lot manufacturing. Ion beam-based techniques have been developed for defining features in miniature, nonplanar substrates. We demonstrate helices in cylindrical substrates having diameters from 100 {micro}m to 3 mm. Ion beam lathe processes sputter-define 10-{micro}m wide features in cylindrical substrates and tubes. For larger substrates, we combine focused ion beam milling with ultra-precision lathe turning techniques to accurately define 25-100 {micro}m features over many meters of path length. In several cases, we combine the feature defining capability of focused ion beam bombardment with ...

Science.gov (United States)

Superconductivity of A-15 Compounds in the-System Nb-Ge-Sn Synthesized by Chemical Vapor Deposition, -. J. Engelhardt and G. W. Webb, ...

Energy Technology Data Exchange (ETDEWEB)

In order to fabricate high temperature superconducting tapes for power applications, the authors have analyzed different buffer layer architectures grown on textured Ni substrates suitable for YBCO deposition. Due to its optimal lattice matching the studied structures present as top layer a CeO{sub 2} film. The deposition of CeO{sub 2} on Ni substrates was performed by pulsed laser ablation and by e-beam evaporation at different temperatures. The films obtained by the two deposition techniques have not optimal structural properties, having a polycrystalline component. The misorientation of CeO{sub 2} is probably due to the formation of NiO at the interface between the film and the substrate during the deposition process even if no oxygen is introduced. In order to prevent Ni oxidation an intermediate 2000 {angstrom} Pd thick film was ...

International Nuclear Information System (INIS)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the impurity concentration and resisitivity are ...

Science.gov (United States)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and ...

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

British Library Electronic Table of Contents (United Kingdom)

On the basis of a numerical model, the temperature and liquid fraction of spray-formed H13 tool steel are calculated as a function of time. Results show that a preheated substrate at the appropriate temperature can lead to very low porosity by increasing the liquid fraction in the deposited steel. The calculated cooling rate can lead to a microstructure consisting of martensite, lower bainite, retained austenite, and proeutectoid carbides in as-spray-formed material. In the temperature range between the solidus and liquidus temperatures, the calculated temperature of the spray-formed material increases with increasing substrate preheat temperature, resulting in a very low porosity by increasing the liquid fraction of the deposited steel. In the temperature region where austenite decomposit...

British Library Electronic Table of Contents (United Kingdom)

In situ composite coating of hydroxyapatite (HA)/TiO2 were produced on titanium (Ti) substrate by micro-arc oxidation coupled with electrophoretic deposition (MAO&EPD) technique with different concentrations of HA particles in the 0.2M NaOH electrolyte solution. The surface morphology and chemical composition of the hybrid coating were effected by HA concentration. The amount of HA particles incorporated into coating layer increased with increasing HA concentration used in the electrolyte solution. The corrosion behavior of the coating layer in simulated body fluids (SBF) was evaluated using a potentiodynamic polarization test. The corrosion resistance of the coated sample was increased compared to the untreated Ti sample. The in vitro bioactivity assessment showed that the MAO&EPD treated...

International Nuclear Information System (INIS)

Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film was of the order of 10"5 cm"-"1. The optical band gap of films was found to be 2.26 ...

International Nuclear Information System (INIS)

We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate ...

International Nuclear Information System (INIS)

A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence x-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films. (author)

Energy Technology Data Exchange (ETDEWEB)

X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 A. During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.

British Library Electronic Table of Contents (United Kingdom)

Palladium deposition on Pt(110) electrodes was studied. Differently from Pt(111) and Pt(100), first and further layers cannot be distinguished in this case only through the voltammetric behavior of hydrogen and anion adsorption. The potential of zero total charge (pztc) was determined as a function of the amount of deposited Pd using CO charge displacement experiments and voltammetric curves. The variation of the voltammetric charge due to hydrogen and anion adsorption has been followed during Pd deposition. The voltammetric charge between 0.06 and 0.4V first decreases to a minimum, then increases and finally becomes stable, suggesting that the surface is finally covered with a Pd multilayer. The pztc and CO oxidation charge show similar behavior. CO oxidation, NO reduction and Cu UPD were...

Energy Technology Data Exchange (ETDEWEB)

In addition to ceramics, alloys such as tool steel and nickel- and iron-based superalloys are being considered for high temperature applications such as missile bearings and low heat rejection engines. Studies were made to lubricate a nickel-based superalloy at 500{degrees}C, by using a vaporized aryl phosphate ester, at a concentration of 0.1% in air. From deposition and wear studies it was found that it was impossible to form a good polymeric coating on the superalloy surface. Energy dispersive X-ray analyzer (EDXA) analysis showed that this was due to minute quantities of aluminum in the alloy segregating to the surface, upon being heated to 500{degrees}C, forming a passive oxide coating. It was necessary to activate the surface, in order to lubricate the material successfully. A method of activation by electrodepositing the surface with a layer of iron oxide was developed. Once activated, a good lubricous polymer was formed on the ...

Energy Technology Data Exchange (ETDEWEB)

The Ti and Ti-Al coatings were deposited onto hot-worked AISI H11 steel substrates and plasma nitrided at 900 C. The Ti coated samples were successfully nitrided, while cracking and delamination of the Ti-Al coating was observed during nitriding. The formation of [delta]-TiN and [epsilon]-Ti[sub 2]N phases were detected after plasma nitriding of the Ti coating. During plasma treatment of the Ti-Al coating, the initial Ti[sub 3]Al and Al phases were paartially transformed into TiAl phase. The martensite transformation of the substrate material was found. The as-deposited Ti coating has a fibrous structure, while the structure of the as-sputtered Ti-Al coating is columnar. The superficial Vickers microhardness of plasma-nitrided Ti coating was 2200 HV 0.03 and the critical load of higher than 50 N indicates very good coating-to-substrate adhesion. (orig.)

International Nuclear Information System (INIS)

High quality Nb_3Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 #mu#m/min at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3"0K, J/sub c/(0)'s of 15 x 10"6 A/cm"2 and Hc_2 as high as 240 k0e have been achieved in 1-3 #mu#m films deposited from a Nb_3Sn reacted powder target with substrate temperatures between 600 and 800"0C. The films exhibit smooth surfaces and, generally, a (200) preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure, T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio ...

Energy Technology Data Exchange (ETDEWEB)

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

Science.gov (United States)

We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (greater than 650 mW/facet) at 80K and 3.8um. A multi-stage 3.8-3.9um laser structure operated up to T=170K. At 80K, peak power greater than 100mW and a high slope- efficiency were observed in gain guided lasers.

Energy Technology Data Exchange (ETDEWEB)

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.

International Nuclear Information System (INIS)

The microstructure, microhardness, corrosion, and wear resistance of d.c.-plated Ni electrodeposits prepared from different types of electrolysing Watts-type baths, without or with organic compounds, ceramic powder - SiC and polymer - polytetrafluoroethylene (PTFE), on Cu substrate, which was subsequently removed from the deposits, were investigated. With the change of the type of bath, the deposit grain size was found to decrease markedly, e.g. deposits with an average grain size of about 50 nm could be produced from the bath containing 45 g/dm"3 Ni"2"+ ions, 5 g/dm"3 SiC, and 20 g/dm"3 PTFE. The surface morphology on the bath side of the electrode-posited Ni or Ni-SiC-PTFE foils was characteristic of the type of bath, and its roughness correlated well with the observed grain size. Microhardness and wear resistance increased with decreasing grain size, as expected. On discussing the factors controlling ...

Energy Technology Data Exchange (ETDEWEB)

Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)

International Nuclear Information System (INIS)

The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min respectively. A progressive sharpening of the ...

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Energy Technology Data Exchange (ETDEWEB)

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

International Nuclear Information System (INIS)

Full text of publication follows: Slightly over-stoichiometric lithium orthosilicate pebbles have been selected as one optional breeder material for the European Helium Cooled Pebble Bed (HCPB) blanket. This material has been developed in collaboration of Research Center Karlsruhe and the Schott Glass, Mainz. The lithium orthosilicate pebbles are fabricated from lithium hydroxide and silica by a melting and spraying method in a semi-industrial scale facility. Lithium hydroxide was selected as the precursor since enriched lithium hydroxide is commercially available. The lithium orthosilicate pebbles produced by the process contains oxide phases besides orthosilicate, but it was also found that the oxide phases can be decomposed by annealing at high temperatures. The lithium orthosilicate pebbles produced in this way possesses satisfactory pebble characteristics. Therefore, the authors performed out-of-pile annealing tests using the lithium orthosilicate pebbles irradiated in a research ...

Energy Technology Data Exchange (ETDEWEB)

One of the most challenging topics in the area of organic electronic devices is the growth of transparent electrodes onto flexible polymeric substrates that will be characterized by enhanced conductivity in combination with high optical transparency. An essential aspect for these materials is their synthesis and/or microstructure which define the transparency, the stability and the interfacial chemistry which in turn determine the performance and stability of the organic electronic devices, such as organic light emitting diodes, organic photovoltaics, etc. In this work, we will discuss the latest advances in the growth of organic (e.g. PEDOT:PSS) and inorganic (e.g. zinc oxide-ZnO, indium tin oxide-ITO) conductive materials and their deposition onto flexible polymeric substrates. We will compare the optical, structural, nano-mechanical and nano-topographical properties of the inorganic and organic materials and we ...

Energy Technology Data Exchange (ETDEWEB)

Development of electronic devices with better performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method for embedding these components within a PWB. We have deposited high-permittivity ferroelectric lead lanthanum zirconate titanate (Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub x}, PLZT 8/52/48) films on base metal foils by chemical solution deposition. These prefabricated capacitor sheets can be embedded into PWBs for power electronic applications. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was applied by chemical solution deposition on nickel foil before the deposition of PLZT. With a {approx} 0.7-{micro}m-thick ferroelectric PLZT film grown on LNO-buffered ...

Science.gov (United States)

Feasibility of depositing continuous films of nano-porous alumino-silicates, primarily zeolites and MCM-41, on metallic and non-metallic substrates was examined with an aim to develop membranes for separation of gaseous mixtures and also for application as hydrogen storage material. Mesoporous silica was deposited in-side the pores of these nano-porous disks with an aim to develop membranes for selective separations. Our study involves supported zeolite film growth on substrates using in-situ hydrothermal synthesis. Faujasite, Silicalite and Mesoporous silica have been grown on various metallic and non-metallic supports. Metallic substrates used for film growth included anodized titanium, sodium hydroxide treated Titanium, Anodized aluminum, and sintered copper. A non-metallic substrate used was nano-porous aluminum oxide. Zeolite film growth was characterized ...

Energy Technology Data Exchange (ETDEWEB)

In this study, liquid flame spray (LFS) was used to produce titania, silver and silver-titania deposits of nanoparticles. Titanium(IV)ethoxide (TEOT) and silver nitrate in ethanol solutions were used as precursors and sprayed into turbulent hydrogen-oxygen flame. Production rates of 1.5-40 mg/min of titania were used with silver additions of 1, 2, 4, and 8 wt% compared to titania. Nanoparticle deposits were collected by thermophoretic sampling at six different axial distances from the flame torch head: 3, 5, 10, 12, 15, and 20 cm, of which the all but the last one occurred inside the flame. The deposit samples were analysed by TEM and SAED analysis. The powder samples of the particles were also collected by electric precipitator to XPS and specific surface area analysis. Particle size and effective density after the flame in the aerosol were analysed with SMPS and ELPI. The results from the previous studies i.e. controlling ...

International Nuclear Information System (INIS)

Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer nucleation and growth induced by the ion beam during the metal deposition is given. The layer quality is ...

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques for producing high-quality solar cell metallization patterns are being investigated, developed, and characterized. A literature search was carried out on the various state-of-the-art laser-assisted techniques for metal deposition, including laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. The results of the literature survey are briefly summarized. Experiments were carried out on laser-enhanced electroplating. Deposition of metals by laser-assisted pyrolysis of a variety of metallo-organic inks and metal-bearing polymer solutions spun as films onto silicon wafers was carried out. A detailed study of the various models of localized surface temperature rise in silicon due to laser heating has been carried out. Progress is reported in fabricating laser-metallized solar cells with improved efficiencies. ...

Energy Technology Data Exchange (ETDEWEB)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated ...

Science.gov (United States)

Hybridization and thermal evolution of the Ni+C{sub 60} composites, deposited on Si(001) at room temperature, were studied using Scanning Electron Microscopy, {mu}-Raman spectroscopy and Rutherford Backscattering. As-deposited, the hybrid films exhibited a granular nano-structure with Ni nano-particles encapsulated in C{sub 60} polymerized rinds. The Ni and C (C{sub 60}) distributions in a top layer were found homogeneous with a stable Ni/C (C{sub 60}) ratio; in the larger depth the distributions were inhomogeneous and their ratio dramatically varied. At elevated temperatures, all structural parameters were changed. In the subsurface layer Ni- and C (C{sub 60})-rich zones were formed (due to the induced phase separation), C{sub 60}-molecules decayed and their fragments were transformed into amorphous carbon (a-C). The free volume distribution of the stressed hybrid matter was analyzed by the Hg marker that (in a form of ...

Energy Technology Data Exchange (ETDEWEB)

Wear-resistant TiN coatings deposited on tool steels are used frequently in industry. There is a trend towards further optimizing these coatings, e.g. by plasma nitriding the tool surface prior to TiN deposition. In this work the influence of the nitriding conditions on the surface properties of AISI 304 and ASP 23 tool steels was investigated. The plasma nitriding was carried out in a triode ion plating configuration normally used to deposit TiN coatings. At the surface of AISI 304 stainless steel, only a thin compound layer (Fe{sub 4}N, Fe{sub 3}N) was found, probably as a consequence of the rather slow nitrogen diffusion in the austenite matrix. For ASP 23 high speed steel, the different nitriding behaviour of the martensitic matrix causes the formation of a diffusion layer which results in an increase in hardness at the surface. On an analogous set of specimens the TiN deposition was started ...

Energy Technology Data Exchange (ETDEWEB)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

British Library Electronic Table of Contents (United Kingdom)

The combined processes of plasma nitriding and cathodic arc deposition of (Ti,Cr,Nb)CN coatings were applied to HSS substrates. The nitrided layers, obtained in a mixture of H2 (70%) and N2 (30%) at two different temperatures (480^oC and 510^oC), were examined for the microhardness depth profiles. Characterization of the duplex coatings was performed by investigating elemental and phase composition, texture, hardness, friction and wear. XRD and XPS analyses revealed the formation of a mixture of a carbonitride fcc solid solution, in a dominant proportion, and metallic chromium. The film hardness was measured to be ~34GPa. The duplex (Ti,Cr,Nb)CN coatings exhibited superior tribological behavior as compared to both nitrided layers and non-duplex coatings.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other ...

CERN Document Server

This work investigates the impingement of a liquid microdroplet onto a glass substrate at different temperatures. A finite-element model is applied to simulate the transient fluid dynamics and heat transfer during the process. Results for impingement under both isothermal and non-isothermal conditions are presented for four liquids: isopropanol, water, dielectric fluid (FC-72) and eutectic tin-lead solder (63Sn-37Pb). The objective of the work is to select liquids for a combined numerical and experimental study involving a high resolution, laser-based interfacial temperature measurement to measure interfacial heat transfer during microdroplet deposition. Applications include spray cooling, micro-manufacturing and coating processes, and electronics packaging. The initial droplet diameter and impact velocity are 80 {\\mu}m and 5 m/s, respectively. For isothermal impact, our simulations with water and isopropanol show very good agreement with ...

Energy Technology Data Exchange (ETDEWEB)

In this study, WO{sub 3} thin films were grown on glass substrates using an aqueous solution containing tungstate (NH{sub 4}){sub 2}WO{sub 4} as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at T{sub s} = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T({lambda}) and ...

Energy Technology Data Exchange (ETDEWEB)

Duplex-coating procedures consisting of plasma nitriding and Me-C:H hard coating lead to an improved performance of the devices because the Me-C:H coating is supported by the nitrided phase and, therefore, the `eggshell-effect` is avoided. Furthermore, this support leads to a higher load-bearing capacity of the thin film. Two standard procedures (classical high-pressure plasma nitriding and unbalanced magnetron sputtering of Ti-C:H) were performed subsequently to prepare the duplex coatings on X20Cr13 ferritic stainless steel. The corrosion resistance of the steel could be improved by nitriding at 450 C compared to the untreated ferritic substrate. The roughness is determined by the nitriding step. The weakest point of the coating is the transition zone between the nitrided and the untreated substrate and not the interface between the Ti-C:H coating and the nitrided substrate as shown by the Rockwell and scratch tests. The ...

International Nuclear Information System (INIS)

In this work, the effects of substrate temperature that was changed from 100 to 500 "oC on the structural, chemical and electrical properties of carbon films, prepared by direct current magnetron sputtering technique, on 316L stainless steel as bipolar plate had been investigated. Raman spectroscopy and scanning electron microscopy (SEM) were performed to study the structure and the morphology of the deposited films, respectively. The corrosion resistance and the electrical resistivity were carried out by using corrosion tests and four point-probe technique. The results show that the carbon films change the structure from amorphous to graphite-like by increasing temperatures. At the temperatures higher than 300 "oC, the holes and porosities are formed on the film indicating a decrease of film quality. According to our results, corrosion resistance and electrical properties are depended strongly on the substrate temperature.

International Nuclear Information System (INIS)

A series of ball-on-disc wear and friction measurements were made for surfaces which have a chemical vapour deposition carbon silicon alloy layer on a carbon substrate (fine grain POCO graphite). Nitrogen ion irradiation was used to improve the wear resistance of the carbon alloy surface. For comparison, measurements were also taken for alumina against alumina. It was found that the lowest friction coefficient and lowest wear occurred for ion irradiated coated samples containing 4% Si in the alloy and that the performance was superior to that of alumina. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

Spray forming is an advanced materials processing technology that converts a bulk liquid metal to a near-net-shape solid by depositing atomized droplets onto a suitably shaped substrate. By combining rapid solidification processing with product shape control, spray forming can reduce manufacturing costs while improving product quality. De Laval nozzles offer an alternative method to the more conventional spray nozzle designs. Two applications are described: high-volume production of aluminum alloy strip, and the production of specialized tooling, such as injection molds and dies, for rapid prototyping.

Energy Technology Data Exchange (ETDEWEB)

Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes therebetween. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them.

Energy Technology Data Exchange (ETDEWEB)

In the region of annular liquid film-mist flow, the behavior of the droplets formed from the liquid film and the rate of formation are the subjects to be clarified in connection with the forecast of dry-out point, which becomes a problem in the region of high dryness such as reactor cooling system and steam generators. Many researches have been performed on such problem in vertical tubes, but the characteristics in horizontal flow have not yet been sufficiently clarified. This series of research is to clarify various characteristics, such as the velocity of vapor phase, the flow rate distribution of droplets, the formation and adhesion of droplets and the structure of liquid film, in the region of liquid film-mist flow, where liquid film exists on the bottom of a horizontal rectangular channel, and vapor flow is accompanied by droplets. In this study, by the measurement of the flow rate distribution of droplets on respective cross sections ...

Science.gov (United States)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This ...

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued ...

International Nuclear Information System (INIS)

Potassium deposition in ultrahigh vacuum on 12-(3-thienyl)dodecanethiol monolayers assembled on gold surfaces has been investigated using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Angle-resolved XPS indicates that initially deposited potassium penetrates the self-assembled monolayer (SAM) and diffuses to the SAM/Au interface. Even after large metal doses, the presence of thiophene ring valence electronic states in the UPS spectra confirms that most of the thiophene rings (at the SAM/vacuum interface) are not covered by potassium. The binding energy shifts of the thiophene ring valence states and the C1s and thiophene S2p peaks, referenced to the Fermi level, are due to the work function changes of the gold substrate. This indicates that these electronic states are pinned to the vacuum level, in contrast to the thiolate S2p orbital, which is pinned to the Fermi level. For large potassium doses, the ...

Energy Technology Data Exchange (ETDEWEB)

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying ...

Energy Technology Data Exchange (ETDEWEB)

A combined PVD/PECVD process for the vacuum deposition of titanium containing amorphous hydrogenated carbon films is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-term stability of the plasma process has been demonstrated. Target poisoning has not been observed. We have fabricated optical selective surfaces by the deposition of a-C:H/Ti multilayers onto aluminum substrates. Even though we have not optimized layer thicknesses and stoichiometries so far, the experimental results are promising: solar absorptance {alpha}{sub S} of 0.876 and thermal emittance {epsilon}{sub 100C} of 0.061 have been achieved yielding an optical selectivity sis defined as{alpha}{sub S}/{epsilon}{sub 100C} of 14.4. Accelerated aging tests of these coatings have demonstrated their aging stability: the service lifetime is predicted to ...

International Nuclear Information System (INIS)

The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.

International Nuclear Information System (INIS)

Metal-organic chemical vapor deposition (MOCVD) made layers of strontium-bismuth-tantalate (SBT) were characterized by spectroscopic ellipsometry (SE) using the Adachi model [S. Adachi, Phys. Rev. B 35 (1987) 7454-7463]. The evaluated optical parameters were correlated with the physical and chemical behavior examined by X-ray diffraction (XRD). As a result, it was possible to fit the measured spectra with the Adachi model in a wide range covering the region of the band gap. The Adachi model provides electronic layer parameters like the transition energy E 0 and broadening ?. Our investigations established a correlation between XRD-determined average grain size and the electronic layer parameters.

Energy Technology Data Exchange (ETDEWEB)

The scale-down of a liquid mini-pump (order of 10 mm) to a micrometre scale has been attempted using a novel valveless nozzle-diffuser design and new application of an organic physical vapor-deposited membrane. The micropump employs no moving parts other than the membrane and accomplishes the rectification of fluid flow due to pressure recovery differences in the nozzle and diffuser flow directions. More specifically, liquids flow with less resistance (i.e. conduct more fluid) in the diffuser direction than the nozzle direction, for a given pressure differential. At the micrometre scale, the fabrication of the critical nozzle and diffuser elements was performed by focused ion beam (FIB) microlithography of glass slides. Etched slides were sandwiched to make two-dimensional venturis. Sternme and Sternme noted the importance of a lower Reynolds Number linfit on the desired pressure recovery which challenged the fabrication of this pump design at the scale used.

Energy Technology Data Exchange (ETDEWEB)

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy ...

International Nuclear Information System (INIS)

The electronic structure and surface interactions vapor-deposited Cu on single-crystal and polycrystalline Bi_2Ca/sub 1+//sub x//sub Sr>2-//sub x//sub Cu>2/O/sub 8+//sub y/ were studied using x-ray photoelectron spectroscopy. The results are compared to the Cu/YBa_2Cu_3O/sub 7-//sub x/ interface. Changes in the Cu 2p satellite emission indicate that the Cu adatoms do not disrupt Bi_2Ca/sub 1+//sub x/Sr/sub 2-//sub x/Cu_2O/sub 8+//sub y/ as extensively as YBa_2Cu_3O/sub 7-//sub x/. However, deposition of Cu induces changes in the Bi environment in the superconductor, and surface segregation of Bi metal was observed at high coverages. Core-level attenuation results suggests minimal outdiffusion of oxygen, in contrast with what is observed for Cu/YBa_2Cu_3O/sub 7-//sub x/.

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

International Nuclear Information System (INIS)

The use of polymer matrix composites in aerospace propulsion applications is currently limited by insufficient resistance to erosion by abrasive media. Erosion resistant coatings may provide necessary protection; however, adhesion to many high temperature polymer matrix composite (PMC) materials is poor. A low pressure oxygen plasma treatment process was developed to improve adhesion of CN_x coatings to a carbon reinforced, fluorinated polymer matrix composite. Fullerene-like CN_x was selected as an erosion resistant coating for its high hardness-to-elastic modulus ratio and elastic resilience which were expected to reduce erosion from media incident at different angles (normal or glancing) relative to the surface. In situ x-ray photoelectron spectroscopy was used to evaluate the effect of the plasma treatment on surface chemistry, and electron microscopy was used to identify changes in the surface morphology of the PMC substrate after plasma exposure. The fluorine ...

International Nuclear Information System (INIS)

The physical, chemical and mechanical properties of magnesium alloys make them attractive materials for automotive and aerospace applications. However, these materials are susceptible to corrosion and wear. This work discusses the potential of using sol-gel based coatings consisting of ZrO_2 and 15 wt.% of CeO_2. The CeO_2 component provides enhanced corrosion protection, while ZrO_2 impart corrosion as well as wear resistance. Coating deposition was performed by the dip coating technique on two magnesium alloy substrates with different surface finishes: AZ91D (as-casted, sand-blasted, and machined) and AZ31 (rolled and machined). All as-deposited coatings (xerogel coatings) were then subjected to 10 h annealing: a temperature of 180 C was applied to the AZ91D alloy and 140 C to the AZ31 alloy. Morphological and structural properties of the annealed coatings were investigated by scanning electron microscopy, atomic force ...

International Nuclear Information System (INIS)

Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi_2 layers with the low sheet resistance value as low as congruent with 4.4 #OMEGA#/cm up to the annealing temperature as high as 850 deg. C without ...

International Nuclear Information System (INIS)

Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF_4) and acetylene (C_2H_2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF_4/(CF_4+C_2H_2). The samples were annealed at 300 deg. C for 30 min. in a N_2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF_4 flow ratio (R=0.97) produced more sp"3 linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 #mu#s and an energy gap of #approx#2.75 eV were observed in both the ...

Energy Technology Data Exchange (ETDEWEB)

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 GPa as well as a low ...

Science.gov (United States)

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and ...

International Nuclear Information System (INIS)

Hybrid organic-inorganic coatings with phosphonate functionalities have been synthesized and evaluated as prospective surface treatments for magnesium materials. These coatings have been processed via a sol-gel route by hydrolysis and condensation of a mixture of diethylphosphonatoethyltriethoxy-silane and tetraethoxy-silane with variable molar ratios. The coatings morphology and the surface chemistry at the coating/substrate interface have been characterized using scanning electron microscopy, X-ray photoelectron spectroscopy, "3"1P nuclear magnetic resonance spectroscopy, and time-of-flight secondary ion mass spectrometry. The corrosion protection performance of the coatings deposited on magnesium alloy AZ31B has been examined by a group of electrochemical techniques including potentiodynamic polarization and electrochemical impedance spectroscopy. In addition, a scanning Kelvin probe technique has been used to investigate interfacial ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation ...

Energy Technology Data Exchange (ETDEWEB)

A lightweight, low permeability liner for graphite epoxy composite compressed gas storage vessels. The liner is composed of polymers that may or may not be coated with a thin layer of a low permeability material, such as silver, gold, or aluminum, deposited on a thin polymeric layer or substrate which is formed into a closed bladder using torispherical or near torispherical end caps, with or without bosses therein, about which a high strength to weight material, such as graphite epoxy composite shell, is formed to withstand the storage pressure forces. The polymeric substrate may be laminated on one or both sides with additional layers of polymeric film. The liner may be formed to a desired configuration using a dissolvable mandrel or by inflation techniques and the edges of the film seamed by heat sealing. The liner may be utilized in most any type of gas storage system, and is particularly applicable for hydrogen, gas ...

Energy Technology Data Exchange (ETDEWEB)

Investigations of the properties of absorbed monolayers have received great experimental and theoretical attention recently, both because of the importance of surface processes in practical applications such as catalysis, and the importance of such systems to the understanding of the fundamentals of thermodynamics in two dimensions. We have adapted the composite bolometer technology to the construction of microcalorimeters. For these calorimeters, the adsorption substrate is an evaporated film deposited on one surface of an optically polished sapphire wafer. This approach has allowed us to make the first measurements of the heat capacity of submonolayer films of /sup 4/He adsorbed on metallic films. In contrast to measurements of /sup 4/He adsorbed on all other insulating substrates, we have shown that /sup 4/He on silver films occupies a two-dimensional gas phase over a broad range of coverages and temperatures. Our ...

Energy Technology Data Exchange (ETDEWEB)

Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

Energy Technology Data Exchange (ETDEWEB)

The design of a reaction cell which permits the investigation of the sorption kinetics of microcomponents without separation of the phases under automated condition has been described. The use of thin-layer inorganic sorbents obtained by depositing films of a sorbing substance from aqueous solutions on flat substrates of small thickness makes it possible to determine the extent of sorption even at small values in the case of /beta/ emitters with a low energy and /alpha/ emitters. Detailed observation of the kinetics of isotopic exchange in the CdS-/sup 115m/Cd-HNO/sub 3/ system has made it possible to reveal at least four stages in the process during the time of observation.

Energy Technology Data Exchange (ETDEWEB)

The reduction of oxygen was studied in 0.1 M KCl at 70 deg. C using the rotating disk electrode (RDE) technique on platinum and electrodeposited ZnO thin film electrodes deposited on platinum substrates. In the absence of Zn{sup 2+} ions in solution, a Tafel slope of 139 mV dec{sup -1} was obtained, a value close to that measured on bare platinum electrode (133 mV dec{sup -1}) and ascribed to the limitation of the reaction rate by the first electron transfer. The main difference between the noble metal and the oxide electrode was a shift of the curves towards more negative potentials. In the presence of Zn{sup 2+} ions, the current density decreased significantly and the Tafel slope was measured at 282 mV dec{sup -1} showing that the electrode was partially blocked by zinc oxide formation reaction intermediates.

Energy Technology Data Exchange (ETDEWEB)

Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

International Nuclear Information System (INIS)

A stable chlorobenzene dispersion of conducting polyaniline (PANI) has been obtained by doping emeraldine base with dodecylbenzene sulfonic acid (DBSA) and studied by spectrophotometric measurements in the UV-vis-IR range. The electrical properties of PANI: DBSA films obtained from the above dispersion have been investigated under different temperature and relative humidity conditions. All-organic chemoresistive devices have been developed by spin-coating the PANI: DBSA dispersion on flexible substrates, and then by depositing electrodes on the top, from a carbon nanotube conducting ink. Sensing tests performed under exposition to calibrated amounts of ammonia reveal that these simple and inexpensive sensors are able to detect ammonia at room temperature in a reliable way, with a sensitivity linearly related to concentration in the range between 5 ppm and 70 ppm.

International Nuclear Information System (INIS)

Composite nitrides (such as BN, TiN) are widely used in various industrial applications because of their extreme wear and corrosion resistance, thermal and electrical properties. in order to obtain composite materials with these optimal properties, it is important to elucidate whether any chemical reactions occur at nitride/metal interfaces, e.g., those involving BN-Ti/TiN. Materials of interest include the deposition by PVD of Ti and TiN on BN substrates. Some of these systems were then subjected to varying degrees of physical and thermal alteration. Detailed X-ray photoelectron spectroscopy (XPS) has therefore been rendered of these interfaces using cross-sectional display and sputter etching. Resulting structural and morphological features have been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). Diffusion of the nitridation, oxynitride formation and interfacial growth are of general interest.

International Nuclear Information System (INIS)

A series of tests has been carried out to determine the operating conditions required to remove the corrosion deposit from samples cut from Winfrith Steam Generating Heavy Water Reactor (WSGHWR) primary circuit pipework by submerged water jetting. Two types of samples were used - one set subjected to the normal annual reactor decontamination using TURCO reagents, the other set having been given a LOMI treatment in addition. Tests showed that useful decontamination factors could be achieved on both types of sample, but significantly less severe operating conditions were required to decontaminate the LOMI treated samples. A decontamination factor of 10 was achieved on TURCO treated samples at 360 Bar; only 200 Bar was required to achieve the same decontamination factor on LOMI treated samples. No metal erosion of the stainless steel substrate was found to occur at these pressures. (author).

Energy Technology Data Exchange (ETDEWEB)

As a result of health and safety issues surrounding the use of radioactive materials on coated optical components, there has been renewed interest in coating materials whose optical and mechanical properties approach those offered by their radioactive counterparts. Due to the radioactive nature of ThF{sub 4} and its widespread use in optical coatings, the coating industry is examining other low index and non-radioactive fluorides as possible alternatives. In this paper, the authors present the results of an experimental study on the optical and mechanical properties of thermally evaporated ThF{sub 4}, DyF{sub 3}, CeF{sub 3}, LiF, HfF{sub 4}, IRX, and IRB thin films, where the materials were deposited at different substrate temperatures. The objective is to examine this series of fluorides under comparable deposition conditions and with respect to such material properties as: n and k, film stress, and environmental ...

International Nuclear Information System (INIS)

This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/Al_2O_3. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and H_2SO_4 solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: H"3/E"2 etc. were measured. It is demonstrated that the formed three-layer ...

Energy Technology Data Exchange (ETDEWEB)

The growth of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films on top of Pt electrode substrates is an important issue for the fabrication of ferroelectric based memories. In a recent publication, SBT thin films grown using seeded and unseeded procedures were studied by PIXE and RBS. Difficulties and misfits found in the comparison of results from both techniques were, at that time, overcome by physical considerations. These, although not rendering interpretation impossible, left out the possibility of understanding the exact nature of the differences between the interface behavior in each case. In the present work it is shown that the reanalysis of the same data using the recently developed RBS-PIXE simultaneous and self-consistent calculation present in NDF leads to stronger conclusions on the solid state reaction occurring during the deposition stage for both types of samples. Allowing for the occurrence of solid state reactions between the ...

International Nuclear Information System (INIS)

A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 buffer layer, and the use of a beam energy of 450 eV for assisting the growth of the top ...

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant behaviour during the ...

International Nuclear Information System (INIS)

The changes in microstructure of a specially prepared boron nitride (BN) film as a function of film depth were studied by high resolution transmission electron microscopy (HRTEM) and other materials analysis tools. These changes were then correlated to the changes in processing parameters during film growth. The analyzed film was fabricated by the four-step ion-assisted deposition procedure known to be effective in film-stress engineering for the formation and retention of a thick cubic BN (cBN) layer with a three-step buffer-layer deposition. In this deposition, the energy of the ions assisting cBN formation was increased stepwise from 200 to 280, and then to 360 eV [S.F. Wong, C. W. Ong, G.K.H. Pang, K.Z. Baba-Kishi, W. M. Lau, J. Vac. Sci. Technol. A 22 (2004) 676]. The nominal thickness of the cBN layer was 650 nm and that for each of the three buffer layers was about 160 nm. Both the HRTEM and electron diffraction ...

Energy Technology Data Exchange (ETDEWEB)

There is presently considerable interest in wear resistant coatings produced using closed field unbalanced magnetron sputtering technology. For example, layered films of diamond-like carbon (DLC) with tungsten or titanium additions have been widely reported. The benefit is that the mechanical properties are enhanced (e.g. giving greater toughness); also it is possible to control the stress state and enhance adhesion. Here we report the further development of this concept by the addition of TiN, TiCN and TiC layers in DLC-based composites, utilizing an additional source of electrons in the vicinity of substrate to enhance ionisation of the plasma and increase coating density. Composite coatings of ceramics TiN, TiC{sub x}N{sub y}, TiC, CrN, TiCrN, TiCrCN, TiCrC, metal doped Ti{sub x%}-DLC and their combinations were deposited on 316 stainless steel substrates. The mass flow of reactive gases into the chamber was controlled ...

International Nuclear Information System (INIS)

Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states ...

Energy Technology Data Exchange (ETDEWEB)

Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the sputtering targets, the background gases, and the substrate surfaces. Auger Electron ...

Energy Technology Data Exchange (ETDEWEB)

The surface of low alloy steel (En40B) has been engineered in the plasma of a glow discharge via plasma nitriding and ion plating of titanium nitride (TiN) coatings on the nitrided substrates with the purpose of enhancing the surface properties and fatigue strength. The nitriding response of the steel has been accessed by the evaluation of phase composition, layer thickness, hardness profile, residual stresses and nitrogen and carbon distributions. The wear and fatigue characteristics of the plasma-nitrided steel have been investigated and simple models have been developed to describe the influence of such properties as depth and strength of the nitrided case on the fatigue limit and load-bearing capacity of the nitrided steel. In order to further improve the tribological properties and load-bearing capacity of the low alloy steel, a duplex plasma surface-engineering technique has been developed. This is achieved by plasma nitriding the steel first so as to produce ...

International Nuclear Information System (INIS)

The T/sub c/ behavior of vapor-deposited Nb_3Ge and Nb_3Sn is examined as a function of low-fluence alpha-particle irradiation. It is found that for Nb_3Sn with rho_0approx.15 #mu##OMEGA#-cm the T/sub c/ is insensitive to low doses of radiation, whereas Nb_3Ge with rho_0approx.50 #mu##OMEGA#-cm has its T/sub c/ depressed immediately with irradiation. It is suggested that the T/sub c/ behavior of A-15 superconductors in the regime of small dose is strongly influenced by the initial state of the sample. Furthermore, it is argued that the behavior of the T/sub c/ with dose can be qualitatively explained by considering a sharp structure in the density of states N(E), the smearing of which by defects leads to a depression in T/sub c/.

International Nuclear Information System (INIS)

The present invention provides a fuel cladding tube having an excellent corrosion resistance and thus a long life, and a suitable manufacturing method therefor. Namely, in the fuel cladding tube, the outer circumference of an inner layer made of a zirconium base alloy is coated with an outer layer made of a metal more corrosion resistant than the zirconium base alloy. Ti or a titanium alloy is suitable for the corrosion resistant metal. In addition, the outer layer can be coated by a method such as vapor deposition or plating, not limited to joining of the inner layer material and the outer layer material. Specifically, a composite material having an inner layer made of a zirconium alloy coated by the outer material made of a titanium alloy is applied with hot fabrication at a temperature within a range of from 500 to 850degC and at a fabrication rate of not less than 5%. The fabrication method includes any of extrusion, rolling, drawing, and ...

Science.gov (United States)

A new method, near-infrared laser desorption/ionization aerosol mass spectrometry (NIR-LDI-AMS), is described for the real time analysis of organic aerosols at atmospherically relevant mass loadings. Use of a single NIR laser pulse to vaporize and ionize particle components deposited on an aluminum probe results in minimal fragmentation to produce exclusively intact pseudomolecular anions at [M-H](-). Limits of detection (total particulate mass sampled) for oxidized compounds of relevance to atmospheric primary and secondary organic aerosol range from 89 fg for pinic acid to 8.8 pg for cholesterol. NIR-LDI-AMS was used in conjunction with the University of Vermont Environmental Chamber to study secondary organic aerosol (SOA) formation from ozonolysis of limonene at total aerosol mass loadings ranging from 3.2 to 25.0 ?g m(-3) and with a time resolution of several minutes. NIR-LDI-AMS permitted direct delineation between gas-phase, homogeneous ...

Energy Technology Data Exchange (ETDEWEB)

Infrared astronomical instruments require absorptive coatings on internal surfaces to trap scattered and stray photons. This is typically accomplished with any one of a number of black paints. Although inexpensive and simple to apply, paint has several disadvantages. Painted surfaces can be fragile, prone to shedding particles, and difficult to clean. Most importantly, the vacuum performance is poor. Recently a plasma enhanced chemical vapor deposition (PECVD) process was developed to apply thick (30 {micro}m) diamond-like carbon (DLC) based protective coatings to the interior of oil pipelines. These DLC coatings show much promise as an infrared black for an ultra high vacuum environment. The coatings are very robust with excellent cryogenic adhesion. Their total infrared reflectivity of < 10% at normal incidence approaches that of black paints. We measured outgas rates of <10{sup -12} Torr liter/sec cm{sup 2}, comparable to bare ...

International Nuclear Information System (INIS)

The Fast Flux Test Facility (FFTF) is a 400-MWt, sodium-cooled reactor located on the Hanford Site near Richland, Washington, USA. The FFTF is owned by the U.S. Department of Energy and is operated by the Westinghouse Hanford Company. The FFTF was designed to test fuels and materials for use in liquid metal reactors. Since initial operation in 1982, anticipated breaches of experimental fuel pins have released fission products, including cesium, into the primary sodium. Because of its high volatility, cesium vaporizes into the cover gas space, where it condenses on components and equipment and is transported into the cover gas outlet. Because of the long half-life of "1"3"7Cs, these deposits result in long-term, local radiation levels that make contact maintenance difficult. Thus, a cesium trap was installed in FFTF to reduce the cesium level in the sodium. The trap could also permit a Run Beyond Cladding Breach (RBCB) program without ...

KoreaScience (Korea)

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International Nuclear Information System (INIS)

As a method to enhance the sensitivity (S) of an inorganic resist for focused-ion-beam (FIB), lithography, sub-0.1 #mu#m patterning properties of a columnar structural #alpha#-Se_7_5Ge_2_5 resist have been investigated using 30 keV low-energy Ga"+-FIB exposure and CF_4 reactive-ion etching (RIE). development. The Se_7_5Ge_2_5 thin films were 60 .deg. and 80 .deg. -obliquely deposited on Si substrate and parts of the films were annealed for several minutes at the glass transition temperature (T_g=#approx#220 .deg. C). Columnar structures with the angles of approximately 40 .deg. and 65 .deg. are observed in 60 .deg. and 80 .deg. -obliquely deposited films, respectively, and they disappear after annealing. Despite the disappearance of the columnar structures, a critical decrease in thickness is not observed. For the FIB exposures with a beam diameter of #approx#0.1#mu#m and around the threshold dose, the negative-type fine ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

Tube supports used in the tube bundles of PWR steam generators have consisted of mechanical devices located at intervals along the tube bundle. The presence of tube supports creates regions of restricted flow with altered flow patterns and increased pressure drop. An additional and very important effect is also the possibility of local complete vaporization or dryout occurring in the tube/support flow passage and crevices. The thermal/hydraulic conditions at which dryout occurs are of particular interest because of the possibility of the deposition of dissolved solids with the occurrence of dryout. As long term build-up of solid deposition could have a deleterious effect, knowledge of the conditions at which dryout occurs would possibly provide a means to avoid this build-up. A test program, sponsored by the Steam Generator Project Office of the Electric Power Research Institute, was conducted to determine the ...

Energy Technology Data Exchange (ETDEWEB)

This article considers the fundamentals of what happens in asolid when it is impacted with a medium energy gallium ion. The study ofthe ion/sample interaction at the nanometer scale is applicable to mostfocused ion beam (FIB) based work even if the FIB/sample interaction isonly a step in the process, e.g., micromachining or microelectronicdevice processing. Whereas the objective in other articles in this issueis to use the FIB tool to characterize a material or to machine a deviceor transmission electron microscopy (TEM) sample, the goal of the FIB inthis article is to have the FIB/sample interaction itself become theproduct. To that end, the FIB/sample interaction is considered in threecategories according to geometry: below, at, and above the surface.First, the FIB ions can penetrate the top atom layer(s) and interactbelow the surface. Ion implantation and ion damage on flat surfaces havebeen comprehensively examined; however, FIB applications require thefurther investigation of high ...

International Nuclear Information System (INIS)

The effect of a substrate on the results of measuring tantalum coating thickness in two-layer compositions according to gamma radiation scattered by the substrate is studied. It is shown that by means of an albedo-radiometer realizing the physical model absorber-scatterer one can determine the thickness (application uniformity) of tantalum coatings up to 150-300 #mu#m depending on the substrate material (plexiglas, aluminium, iron, copper). In case of testing coatings on substrates of alloys and high-alloy steels in order to ensure high accuracy of measrurement it is expedient with the above albedo-radiometer to determine the value of the backscattered radiation flux for the substrate before coating application.

Energy Technology Data Exchange (ETDEWEB)

An automated Time Resolved Aerosol Collector (TRAC) has been developed for sequential sampling of field-collected aerosols for laboratory-based Computer Controlled Scanning Electron Microscopy/Energy Dispersed X-ray (CCSEM/EDX) single particle analysis. The collector is optimized for use of grid-supported 20 nm carbon films as deposition substrates. The carbon films have low enough X-ray background to permit EDX analysis down to 0.1-0.2 ?m particles, including detection of low-Z elements: C, N, & O. The TRAC provides unattended sampling onto a set of 151 individual grids, at sequential time intervals as short as 1 min. After collection, the samples are sealed and refrigerated pending analysis. The utility of the TRAC-CCSEM/EDX approach is exemplified using the aerosol samples collected during the Texas 2000 Air Quality Studies (Aug. 15 ? Sept. 15, 2000). We are able to quantitatively follow the time evolution in the relative contribution of ...

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Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant {tau} obtained from the curve fitting represents the time accumulation ...

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We investigated the Raman coherence characteristics of a solid hydrogen film deposited on a sapphire substrate held at 5.3 K. Using Raman coherence prepared with two single-frequency pulsed lasers, we generated the multiorder coherent Raman sidebands in solid hydrogen film. The highorder Raman sidebands were obtained under strong pumping intensities (>= 230 MW/cm{sup 2}). The generated anti-Stokes(AS)-Raman sidebands extend from the ultraviolet (292 nm for the AS5 band) to the visible (565 nm for the AS1 band) region. The multiorder Raman sideband generation is found to be due to the parametric coupling of pump and coupling lasers. The frequency conversion efficiency from pumping beams to the first AS-Raman sideband shows a maximum (14 %) at a pumping intensity of 360 MW/cm{sup 2}. From an experiment that makes the multimode probe beam beat with the prepared Raman coherence, we found that the prepared Raman coherence replicates the probe ...

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Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.

Science.gov (United States)

A high power AlGaInP single quantum well graded index separate confinement heterostructure. It comprises a substrate and a multiplicity of layers deposited thereon comprising a single Ga{sub x}In{sub x}P quantum well where x has a value from about 0.4 to about 0.6; multiple graded index regions on both sides of the quantum well and cladding layers adjacent to each graded region of the well, the graded region comprising Al{sub y}(Ga{sub 1{minus}y}){sub 0.5}In{sub 0.5}P quaternary alloy; wherein the value of y in the graded region varies from about 0.2 at the quantum well/graded region interface to up to about 0.6 for the cladding layers/graded index regions; the heterostructure having a low broad area threshold current with pulsed thresholds in the range from about 1 to about 2 Amps/cm{sup 2} and a differential efficiency of from about 20 to about 60 percent.

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Proof-of-principle experiments are reported for a new concept in electrically rechargeable zinc-air battery. The zinc electrode is a porous flow-thru type using a copper foam metal substrate with zinc deposition onto the foam metal from concentrated zincate electrolyte (as used in zinc-slurry type batteries). The bifunctional air electrode employs low-cost materials, being fabricated entirely from carbon-based precursors and small amounts of nickel and/or cobalt oxide. Corrosion measurements on the graphite materials in the air electrode indicate sufficient corrosion resistance for 8000 h life on charge. A prototype single cell was constructed having 1.5 Ah capacity producing 1.2 V discharge -2.0 charge at the three hour rate and has produced stable voltages for more than 150 cycles. Based on the 1.5 Ah prototype characteristics, design calculations for a 32 kWh battery project an energy density of about 110 Wh/kg, peak power density of 140 ...

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This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ films sputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance characteristics of the films but leads to either no detectible change in their photoelectrochemical properties or to an increase in ...

CERN Document Server

The combination of large thickness ($>3$ $\\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing equations.

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Copper coatings deposited on Al-6061 substrates by radio frequency magnetron sputtering, to prevent the retention and permeation of energetically implanted tritium in Al-6061, were evaluated by a variety of characterization techniques. The coatings, weighing in the 0.03 to 0.088 kg/m{sup 2} range, were smooth and had a fine grain structure. They contained the intermetallic phases Cu{sub 9}Al{sub 4} and CuAl{sub 2} as well as copper. The fractions of Al and Cu in any coating increased and decreased, respectively, with increasing depth below the surface. Furthermore, the fractions of Al and Cu on the coating surface decreased and increased, respectively, with increasing coating weight. There was no texture or preferred orientation in the Cu phase of the coatings. A significant amount of oxygen was also detected at the original substrate surface. Residual stress measurements revealed that, in both Cu and CuAl{sub 2}, the ...

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Water vapor is well known to be a critical component in many aspects of atmospheric research, such as radiative transfer and cloud and aerosol processes. This requires both improved measurements of the columnar water vapor and its profiles in the atmosphere in a wide range of conditions, and adjustment of water vapor parameterizations in radiation codes including the perfection of spectroscopic parameters. In this paper we will present the results of comparison of our calculations and downward solar fluxes measured with Rotating Shadowband Spectroradiometer under conditions of horizontally homogeneous clouds. We also will discuss the sensitivity of atmospheric radiation characteristics to variations of water vapor in the band 940 nm: these results may be useful for development of new methods of retrieval of the total column water vapor content (WVC) in the atmosphere from data of ...

International Nuclear Information System (INIS)

The trifluoroacetate metal-organic decomposition route to YBa_2Cu_3O_7 film growth was investigated in order to bring new insights in the growth mechanism and its dependence on processing conditions and critical current density. Precursor films were processed on LaAlO_3 substrates at different total pressure, oxygen partial pressure, water vapor partial pressure, and volume gas flow rate keeping the growth temperature at 740 "0C. The influence of these various experimental parameters on the film growth rate, which was evaluated by in situ electrical resistance measurements, was studied thoroughly. It was found that the growth rate is nearly independent of the oxygen pressure and proportional to the square root of the water pressure. Additionally, the growth rate increases with a decrease of the total pressure or an increase of the gas flow rate. An empirical multi-exponential model simulates the experimental data, however, a better ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength ...

International Nuclear Information System (INIS)

Complimentary spectroscopic, microscopic and electrochemical studies were performed to characterise the barrier properties as well as the interface structure of model iron substrates covered with thin plasma polymer films. Cathodic plasma polymers were deposited which show high barrier properties. The metal surface was pre-treated by a reducing or oxidising plasma. This allowed the adjustment of the oxidation state of the interface layer. The interface structure was characterised by means of X-ray photoelectron sputter profiles, infrared spectroscopy and the application of a Kelvin probe. The investigations show that the measured Voltapotential on the plasma polymer surface can be correlated with the oxidation state of the interface. Reducing plasmas lead to an almost oxide free surface. After deposition of the plasma polymer, this reduced state of the oxide is sensitive to re-oxidation of the interface by oxygen that ...

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We report on studies of device degradation in organic photovoltaic devices based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Since delamination, oxidation, and chemical interactions at the metal electrode/organic interface have long been posited as degradation pathways in organic electronic devices, we first investigated the stability of a variety of electrodes for devices stored in an inert, dark environment. Second, a set of experiments was designed to separate the effects at the metal/organic interface from the degradation of the active layer or the hole extraction interface. To do this, Ca/Al electrodes were deposited to complete half of a substrate's devices, and samples were left both under constant illumination and 10% illumination (10% duty cycle of 1 sun illumination) in a glovebox environment. After more than 200 h of measurement, additional electrodes were ...

Science.gov (United States)

The applicability of Pd/sub x/Ta/sub 1-x/ as a diffusion barrier on Si has been investigated. For this purpose Pd/sub x/Ta/sub 1-x/ films of 200 nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between over-layer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as-deposited Pd/sub x/Ta/sub 1-x/ films with 0.2 less than or equal to x less than or equal to 0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing a discontinuous step in the reaction temperature. RBS spectra revealed that for the Pd-rich compositions first a stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi2 formed at the surface. For Ta-rich compositions Pd2Si formed first as well, however, the reaction temperature was so high that Pd2Si ...

Science.gov (United States)

Metastable yttrium-oxide films are synthesized using reactive sputter deposition. The yttrium concentration of the as-deposited film is found to vary as a function of the sputter deposition rate. In addition to the synthesis of the cubic equilibrium phase...

Energy Technology Data Exchange (ETDEWEB)

Under the direction of the NASA-Glenn Research Center, the Edison Welding Institute (EWI) in Columbus, OH performed a series of non-fusion joining experiments to determine the feasibility of joining refractory metals or refractory metal alloys to Ni-based superalloys. Results, as reported by EWI, can be found in the project report for EWI Project 48819GTH (Attachment A, at the end of this document), dated October 10, 2005. The three joining methods used in this investigation were inertia welding, magnetic pulse welding, and electro-spark deposition joining. Five materials were used in these experiments: Mo-47Re, T-111, Hastelloy X, Mar M-247 (coarse-grained, 0.5 mm to several millimeter average grain size), and Mar M-247 (fine-grained, approximately 50 {micro}m average grain size). Several iterative trials of each material combination with each joining method were performed to determine the best practice joining method. Mo-47Re was found to be joined easily to ...

Science.gov (United States)

... 2-93 An Atmospheric Particle Emits Electromagnetic ... atmospheric water vapor produces a hydrometeor. ... subject to wind movement (either blowing ...

Energy Technology Data Exchange (ETDEWEB)

The history of explosives vapor detection includes almost every detection strategy known to man. Initial attempts to utilize these techniques were dismal failures. However, with the development of the Electron Capture Detector (ECD), the first promising detection of explosives vapors became possible. The present commercial explosives detectors detect the higher vapor pressure materials but not the whole spectrum. This paper describes the basic properties of explosives molecules and our research to utilize these properties for increased detection sensitivity.

Science.gov (United States)

No abstract prepared.

Science.gov (United States)

... Accession Number : ADD257320. Title : Sputter Deposition of Yttrium-Oxides. Descriptive Note : Journal article,. Corporate ...

Energy Technology Data Exchange (ETDEWEB)

X-ray ablation of material from the first wall and other components of an ICF (Inertial Confinement Fusion) chamber is a major threat to the laser final optics. Material condensing on these optics after a shot may cause damage with subsequent laser shots. To ensure the successful operation of the ICF facility, removal rates must be predicted accurately. The goal for this dissertation is to develop an experimentally validated x-ray response model, with particular application to the National Ignition Facility (NIF). Accurate knowledge of the x-ray and debris emissions from ICF targets is a critical first step in the process of predicting the performance of the target chamber system. A number of 1-D numerical simulations of NIF targets have been run to characterize target output in terms of energy, angular distribution, spectrum, and pulse shape. Scaling of output characteristics with variations of both target yield and hohlraum wall thickness are also described. Experiments have been ...

International Nuclear Information System (INIS)

Ti and its alloys (Ti-6Al-4V) have been used in different engineering applications due to their several outstanding properties. Nevertheless, their use in practical applications is limited in many cases due to their poor tribological property. Researches are ongoing on surface modification of Ti based materials by different plasma and ion based techniques to overcome this problem. However, the conventional plasma nitriding techniques have several problems such as formation of an arc, increased possibility of surface contamination due to a comparatively higher operating pressure, production of a very thin nitrided layer after a long processing time, etc. In this present work, the possibility of a new low-pressure plasma nitriding process using a Plasma Enhanced Chemical Vapor Deposition (PECVD) based saddle field fast atom beam source on a Ti-6Al-4V alloy sample is investigated. Plasma nitriding was carried out at 900 deg. C and at a pressure ...

Energy Technology Data Exchange (ETDEWEB)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch ...

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Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior ...

International Nuclear Information System (INIS)

In order to practice design-by-analysis of thermohydraulics design of BWR fuel rod bundles, the subchannel analysis would play a major role. There, one of the immediate concerns is improvement in its predictive capability of boiling transition phenomena on the fuel rod surface. This capability strongly depends on the modeling of thermohydraulics phenomena of interests: 1) vapor-liquid redistribution by inter-subchannel exchanges due to the diversion cross flow, turbulent mixing and void drift, 2) liquid film behaviors, 3) transition of two-phase flow regimes, 4) droplet entrainment and deposition and 5) spacer-droplet interactions. These are considered to be five key factors in understanding the BT in BWR fuel rod bundles. This paper describes a progress and current status in the second year of the three year project on developing generalized boiling transition models with the above five key factors being focused on. A combined approach of ...

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In this work, the thermal performance of a conventional collector is improved by inserting porous substrates at the inner walls of the collector tubes. The porous substrates improve the convective heat transfer coefficient between the tube wall and the fluid. This improvement is investigated numerically and its effects on the efficiency and the useful gain of the collector are evaluated. It is found that inserting the porous substrate may raise the collector efficiency considerably, especially at high values of the overall heat loss coefficient.

International Nuclear Information System (INIS)

During 1993 and 1994 a working group of biologists operating in Region Lombardia has carried out a study to evaluate the reliability of artificial substrates in the assessment of water quality by the Extended Biotic Index. Macroinvertebrate samples were collected by means of hand net and artificial substrates (up to 3 replicates) in 22 sampling sites of 15 watercourses of different typology (river, stream, irrigation channel) and water quality. Sampling efficiency and reliability in the calculation of E.B.I. and Quality Class by 1, 2 and 3 artificial substrates with respect to hand net have been evaluated. Influence of water quality, typology and original prevailing substrate in watercourses on the performance of artificial substrates has also been investigated. Results show a good agreement with other Authors' papers, confirming that artificial substrates ...

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This study aims to develop a particulate model combining solid waste particle combustion and heavy metal vaporization from burning particles during MSW incineration in a fluidized bed. The original approach for this model combines an asymptotic combustion model for the carbonaceous solid combustion and a shrinking core model to describe the heavy metal vaporization. A parametric study is presented. The global metal vaporization process is strongly influenced by temperature. Internal mass transfer controls the metal vaporization rate at low temperatures. At high temperatures, the chemical reactions associated with particle combustion control the metal vaporization rate. A comparison between the simulation results and experimental data obtained with a laboratory-scale fluid bed incinerator and Cd-spiked particles shows that the heavy metal vaporization is ...

Science.gov (United States)

The authors described a method for determination of tissue renin activity with heterologous substrate. The preparation of the substrate was performed at several stages: salting with amonium sulfate; dialisis of the precipitate till complete separation of amonium sulfate molecules; distruction of angiotensinases by interchangeble souring and alcalization of the medium; lyophylization of the pure substrate. The obtained renin-substrate was preserved in ampules and its usage had a series of advantages--duration, economic, a possibility for standartization of the determination, etc., which were described in details in the article. The described in details also the quantitative determination of the renin activity in the tissues (renal and cerebral) with the help of the obtained substrate as the moments, modiied by the authors, were indicated. PMID:436712

International Nuclear Information System (INIS)

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt increase in photocurrent ...

International Nuclear Information System (INIS)

In this study, a range of joining technologies has been investigated for creating attachments between refractory metal and Ni-based superalloys. Refractory materials of interest include Mo-47%Re, T-111, and Ta-10%W. The Ni-based superalloys include Hastelloy X and MarM 247. During joining with conventional processes, these materials have potential for a range of solidification and intermetallic formation-related defects. For this study, three non-conventional joining technologies were evaluated. These included inertia welding, electro-spark deposition (ESD) welding, and magnetic pulse welding (MPW). The developed inertia welding practice closely paralleled that typically used for the refractory metals alloys. Metallographic investigations showed that forging during inertia welding occurred predominantly on the refractory metal side. It was also noted that at least some degree of forging on the Ni-based superalloy side of the joint was necessary to achieve ...

Science.gov (United States)

Both ammonium and nitrite act as substrates as well as potential inhibitors of anoxic ammonium-oxidizing (Anammox) bacteria. To satisfy demand of substrates for Anammox bacteria and to prevent substrate inhibition simultaneously; two strategies, namely high or low substrate concentration, were carefully compared in the operation of two Anammox upflow anaerobic sludge blanket (UASB) reactors fed with different substrate concentrations. The reactor working at relatively low influent substrate concentration (NO(2)(-)-N, 240 mg-NL(-1)) was shown to avoid the inhibition caused by nitrite and free ammonia. Using the strategy of low substrate concentration, a record super high volumetric nitrogen removal rate of 45.24 kg-Nm(-3) day(-1) was noted after the operation of 230 days. To our knowledge, such a high value has not been reported previously. ...

Energy Technology Data Exchange (ETDEWEB)

A zinc-air battery using zinc regeneration electrolysis with propanol oxidation as a counter electrode reaction is reported in this paper. It possesses functions of both zincate reduction and electrochemical preparation, showing the potential for increasing the electronic energy utilization. Charge/discharge tests and scanning electron microscopy (SEM) micrographs reveal that when a nickel sheet plated with the high-H{sub 2}-overpotential metal, cadmium, was used as the negative substrate electrode, the dendritic formation and hydrogen evolution are suppressed effectively, and granular zinc deposits become larger but relatively dense with the increase of charge time. The performance of batteries is favorable even if the charge time is as long as 5 h at the current density of 20 mA cm{sup -2}. Better discharge performance is achieved using a 'cavity-opening' configuration for the discharge cell rather than a ...

International Nuclear Information System (INIS)

The ternary compound CuInS2 is attractive for solar cells due to its band gap of 1.54 eV which borders the optimum value necessary for conversion of a solar spectrum. Recently, works on thin film cells based on this material (ZnO/CuInS2) has been reported to show efficiency as high as 11.4%. In this paper, the orientation and the morphology of CuInS2 sprayed films are determined by the means of X-ray diffraction and scanning electron microscopy. Sprayed CuInS2 films deposited onto a transparent Pyrex substrate with standard fabrication parameters show a chalcopyrite structure with a preferential orientation (1 1 2). A model based on the calculation of the relative dielectric function ? has been performed in order to obtain the profile of variation of this parameter and to understand the optical behavior of this material via its transmittance and reflectance in visible and near-infrared regions (0.35-2.5 ?m). In the same way, considering the ...

International Nuclear Information System (INIS)

FexZn1-x alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K?/K? x-ray intensity ratios of Zn and Fe in FexZn1-x thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi 241Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in FexZn1-x thin films for different values of x. The reason for this change may be that the electronegativity of iron is ...

International Nuclear Information System (INIS)

Epitaxial CeO_2 buffer layers were fabricated by pulsed laser deposition (PLD) on r-cut sapphire substrates. An atomically flat CeO_2 surface with a high density of nanodots was formed by a self-assembly process. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy investigation showed that the nanodots were CeO_2 other than impurities. YBa_2Cu_3O_7_-_#delta# (YBCO) thin films were then grown on the annealed and the as-grown CeO_2-buffered sapphires by PLD. The transport measurement results showed that the nanodots enhanced the effective pinning potential and significantly increased critical current density (J _c). Especially, YBCO films with an annealed CeO_2 buffer layer showed a high J _c peak when the applied field was directed along the c-axis of YBCO. Cross-section transmission electron microscopy investigation revealed that the J _c peaks in YBCO with annealed CeO_2 buffer layer is caused by c-axis ...

Energy Technology Data Exchange (ETDEWEB)

YBCO films were fabricated on PLD-CeO{sub 2}/IBAD-Gd{sub 2}Zr{sub 2}O{sub 7}/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO{sub 2} buffer layer for obtaining high I{sub c} was investigated in short samples of YBCO films. The CeO{sub 2} buffer layer was epitaxially grown on an IBAD-Gd{sub 2}Zr{sub 2}O{sub 7} template tape with 18 deg. of {delta}{phi} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO{sub 2} buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 {mu}m. The size of CeO{sub 2} grains was about 1 {mu}m at the saturated thickness of {delta}{phi}. YBCO films with the thickness of 1 {mu}m were deposited by the TFA-MOD on the CeO{sub 2} buffer layer with different thickness films. Improvement of the CeO{sub 2} in-plane grain alignment resulted in increase of I{sub c}. The I{sub c} values of 250-290 A were obtained with the CeO{sub 2} ...

Energy Technology Data Exchange (ETDEWEB)

The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel electrode (SCE). The MoSi{sub 1.9-2.1} films had ...

Energy Technology Data Exchange (ETDEWEB)

Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H/sup -/ or /sup 3/He/sup -/ ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams.

Energy Technology Data Exchange (ETDEWEB)

Molar enthalpies of sublimation of 1,2,4-, 1,2,3-, and 1,3,5-tri-hydroxy-benzene, were obtained from the temperature dependence of the vapor pressure measured by the transpiration method. The molar enthalpies of fusion and molar heat capacities of these compounds were measured by DSC. The measured data sets of vaporization, sublimation and fusion enthalpies were checked for internal consistency. Strength of the inter- and intra-molecular hydrogen bonding in di- and tri-hydroxy-benzenes have been assessed.

Energy Technology Data Exchange (ETDEWEB)

Using gasoline as an example of additives for cold start improvement, fuel vapor composition of methanol-gasoline mixtures, fuel evaporation rate in consideration of temperature drop due to heat of fuel evaporation, air fuel ratio, stoichiometric air fuel ratio and excess air ratio of fuel vapor were calculated. The mixture formation of methanol-gasoline mixtures at low temperature in otto cycle engines was studied. Van Laar's empirical formula was used to estimate the partial pressure of high-percentage methanol blends. It was found that the most part of fuel vapor is occupied by gasoline, even when a small amount of gasoline is added to methanol resulting to an extremely small excess air ratio. It is obvious that this vapor pressure adjustment using gasoline is the dominant factor for improvement in cold startability. (10 figs, 1 tab, 10 refs)

Energy Technology Data Exchange (ETDEWEB)

Nomographs are presented that estimate the evaporation loss from external floating-roof tanks using tank diameter, type of seal, product vapor pressure, and wind velocity.

Energy Technology Data Exchange (ETDEWEB)

Hydrothermal systems typically consist of hot permeable rock which contains either liquid or liquid and saturated steam within the voids. These systems vent fluids at the surface through hot springs, fumaroles, mud pools, steaming ground and geysers. They are simultaneously recharged as meteoric water percolates through the surrounding rock or through the active injection of water at various geothermal reservoirs. In a number of geothermal reservoirs from which significant amounts of hot fluid have been extracted and passed through turbines, superheated regions of vapor have developed. As liquid migrates through a superheated region of a hydrothermal system, some of the liquid vaporizes at a migrating liquid-vapor interface. Using simple physical arguments, and analogue laboratory experiments we show that, under the influence of gravity, the liquid-vapor interface may become unstable and break up into ...

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

UK PubMed Central (United Kingdom)

Halothane, chloroform, and carbon tetrachloride, in the vapor and liquid phases, stimulate the water receptor of the blowfly Phormia regina. There are three successive phases of response to long-lasting...Full Text Available

UK PubMed Central (United Kingdom)

The acetogenic bacterium Clostridium thermoaceticum ATCC 39073 grew at the expense of the two-carbon substrates oxalate and glyoxylate. Other two-carbon substrates (acetaldehyde, acetate,...Full Text Available

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

UK PubMed Central (United Kingdom)

BackgroundIn vitro data suggest that changes in myocardial substrate metabolism may contribute to impaired myocardial function in diabetic cardiomyopathy (DCM)....Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The freezing of liquid in the form of a granule on a cooled substrate is considered. On the basis of a hypothesis regarding the form of the isotherms in the granule, an analytical solution of the Stefan problem is obtained for two limiting cases: when a/sub d/ >> a/sub s/ and a/sub d/ << a/sub s/, where a/sub s/ and a/sub d/ are the thermal conductivity of the substrate and drop, respectively. The results of calculating the crystallization times of the granules as a function of their dimensions (height and diameter) and the substrate temperature, and also the dynamics of temperature variation at the base of the granule in the course of crystallization, are in good agreement with the experimental data.

Energy Technology Data Exchange (ETDEWEB)

A piezoelectric biosensor substrate useful for immobilizing biomolecules in an oriented manner on the surface of a piezoelectric sensor has a ladder polymer of polyacrylonitrile. To make the substrate, a solution of an organic polymer, preferably polyacrylonitrile, is applied to the surface of a piezoelectric sensor. The organic polymer is modifying by heating the polymer in a controlled fashion in air such that a ladder polymer is produced which, in turn, forms the attachment point for the biomolecules comprising the piezoelectric biosensor. 3 figs.