Energy Technology Data Exchange (ETDEWEB)

Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.

Energy Technology Data Exchange (ETDEWEB)

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical ...

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Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high ...

Science.gov (United States)

Hybridization and thermal evolution of the Ni+C{sub 60} composites, deposited on Si(001) at room temperature, were studied using Scanning Electron Microscopy, {mu}-Raman spectroscopy and Rutherford Backscattering. As-deposited, the hybrid films exhibited a granular nano-structure with Ni nano-particles encapsulated in C{sub 60} polymerized rinds. The Ni and C (C{sub 60}) distributions in a top layer were found homogeneous with a stable Ni/C (C{sub 60}) ratio; in the larger depth the distributions were inhomogeneous and their ratio dramatically varied. At elevated temperatures, all structural parameters were changed. In the subsurface layer Ni- and C (C{sub 60})-rich zones were formed (due to the induced phase separation), C{sub 60}-molecules decayed and their fragments were transformed into amorphous carbon (a-C). The free volume distribution of the stressed hybrid matter was analyzed by the Hg marker that (in a form of ...

Energy Technology Data Exchange (ETDEWEB)

The preparation and performance of membranes for application to hydrogen separation from coal-derived gas is described. The membrane material investigated was dense amorphous silica deposited on a suitable support by chemical vapor deposition (CVD). Two types of support materials were pursued. One type consisted of a two-layer composite, zeolite silicalite/{alpha}-Al{sub 2}O{sub 3}, in the form of tubes approximately 0.7 cm in diameter. The other type was porous glass tubes of diameter below 0.2 cm. The first type of support was prepared starting from {alpha}-Al{sub 2}O{sub 3} tubes of 1{micro}m mean pore diameter and growing by hydrothermal reaction a zeolite silicalite layer inside the pores of the alumina at the OD side. After calcination to remove the organic template used in the hydrothermal reaction, CVD was carried out to deposit the final silica layer. CVD was carried out by ...

International Nuclear Information System (INIS)

Atmospheric pressure plasma enhanced chemical vapour deposition system is built. The electrical and optical characteristics of the APPECVD system is given. The system is used to deposit conductive polymers and nano composites onto glass and metal surfaces. The morphological, optical, chemical and electrical characteristics of deposited surfaces are investigated using SEM, AFM four probe deposition purposes. The photovoltaic applications of plasma deposited polymers and nonconsumption are compared with deposited with electrochemical methods show different results. The electrical, chemical and morphological structures of the samples will be given.

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si ...

Energy Technology Data Exchange (ETDEWEB)

A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.

Energy Technology Data Exchange (ETDEWEB)

In order to apply chemical-looping combustion to a practical power plant, carbon deposition on the solid particle is one of the key problems to be overcome. Six kinds of solid particles were examined to clarify the kinetic behavior of carbon deposition. The effects of the solid composition, feed gas composition, and reaction temperature on carbon deposition were investigated by thermogravimetrical reactor on the basis of NiO/YSZ particle. From the viewpoints of both reactivity and resistance against carbon deposition, the particle of NiO mixed with YSZ (i.e., yttria-stabilized zirconia) was found to be a good candidate for chemical-looping combustion. It has been observed that carbon deposition could be completely avoided with very low concentration of water vapor. By means of a proposed model, the condition that carbon deposition would be ...

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A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.

International Nuclear Information System (INIS)

The corrosion behavior of the sputter-deposited amorphous or nanocrystalline W-Nb alloys is studied in 10% NaCl, 0.1 and 1 M NaOH solutions at 24 deg. C, open to air using immersion tests and electrochemical measurements. Niobium metal acts synergistically with tungsten in enhancing the corrosion resistance of the W-Nb alloys so as to show lower corrosion rates than the corrosion rates of the alloy-constituting elements in almost all examined solutions. Corrosion rates of W-Nb alloys are about more than one order of magnitude less than that of the sputter-deposited tungsten and even lower than that of sputter-deposited niobium. The stability of the anodic passive films formed on the W-Nb alloys increase with niobium content.

Energy Technology Data Exchange (ETDEWEB)

The excellent high temperature strength and thermal conductivity of molybdenum-base alloys provide attractive features for components in advanced magnetic and inertial fusion devices. Refractory metal alloys react readily with oxygen and other gases. Oxidized molybdenum in turn is susceptible to losses from volatile molybdenum trioxide species, (MoO3)m, in air and the hydroxide, MoO2(OH)2, formed from water vapor. Transport of radioactivity by the volatilization, migration, and re-deposition of these volatile species during a potential accident involving a loss of vacuum or inert environment represents a safety issue. In this report we present experimental results on the oxidation, volatilization and re-deposition of molybdenum from TZM in flowing air between 400 and 800°C. These results are compared with calculations obtained from a vaporization mass transfer model using chemical thermodynamic ...

International Nuclear Information System (INIS)

A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thin amorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 C a metastable cubic alloy forms at the ...

CERN Document Server

Fourier Transform Infrared (FTIR) spectroscopy has been utilized during high rate E-beam evaporation/deposition of YBa2Cu3O7 (YBCO). The results demonstrate the great utility of FTIR as an in situ monitor of YBCO deposition and processing. We detect different (amorphous/fine polycrystalline) insulating pre-existing phases to the high Tc superconducting phase which appear to have distinct reflectivity fingerprints dominated by thin film interference effects, as a function of temperature and oxygen pressure. These fingerprints reveal some of the kinetic and thermodynamic pathways during the growth of YBCO.

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

Energy Technology Data Exchange (ETDEWEB)

Sputter-deposited tantalum (Ta) and reactively sputter-deposited Ta-nitride films were studied with respect to the passivation capability against copper (Cu) oxidation in thermal O{sub 2} ambient. A 200 {angstrom} Ta or Ta-nitride film was sputter-deposited on a 2,000 {angstrom} Cu film using a Ta target in an Ar/N{sub 2} gas mixture. With Ta passivation, Cu was not oxidized at temperatures up to 400 C, which can be further improved by using passivation of an amorphous Ta-nitride film deposited in an appropriate condition. The absence of long-range defects in the Ta-nitride film was presumably responsible for this improvement. However, sputtering-induced surface damage by excess N{sub 2} in the sputter gas mixture may reduce the passivation capability of Ta-nitride films. When the passivated Cu was oxidized, the Cu oxides always resided in the top surface region. That is, in the ...

Energy Technology Data Exchange (ETDEWEB)

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

Energy Technology Data Exchange (ETDEWEB)

TiB{sub 2} appears to be a promising material for the wear protection in various tribological systems, e.g. the diecasting of Al. This study focuses on the development of titanium boride coatings deposited by PACVD, a deposition method which is most suitable for the coating of substrates with complex shapes. All layers analysed are very smooth and exhibit a quasi-amorphous fracture surface. XRD and TEM analysis indicate a nanocrystalline structure with grain sizes in the order of 2 nm. The diffraction patterns can well be correlated to titanium diboride. WDS reveals an over stoichiometric B/Ti ratio. The layer hardness reaches the value of 33 GPa and the critical load in scratch tests rises to 35 N. Neither 100Cr6 nor Al as a counterpart in pin-on-disk tests leads to wear of the coating. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A combined PVD/PECVD process for the vacuum deposition of titanium containing amorphous hydrogenated carbon films is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-term stability of the plasma process has been demonstrated. Target poisoning has not been observed. We have fabricated optical selective surfaces by the deposition of a-C:H/Ti multilayers onto aluminum substrates. Even though we have not optimized layer thicknesses and stoichiometries so far, the experimental results are promising: solar absorptance {alpha}{sub S} of 0.876 and thermal emittance {epsilon}{sub 100C} of 0.061 have been achieved yielding an optical selectivity sis defined as{alpha}{sub S}/{epsilon}{sub 100C} of 14.4. Accelerated aging tests of these coatings have demonstrated their aging stability: the service lifetime is predicted to ...

Energy Technology Data Exchange (ETDEWEB)

We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

Energy Technology Data Exchange (ETDEWEB)

Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.

Energy Technology Data Exchange (ETDEWEB)

Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

International Nuclear Information System (INIS)

Anthracene-bis-resorcinol is an interesting molecule as it forms a hydrogen-bonded network when guest molecules with weak polarity are included. Focused ion beam (FIB) was irradiated on a part of its amorphous film with low dose, and the film was exposed to the vapor of guest molecules. From fluorescence and AFM analyses of this film, it was found that no inclusion compound was formed in FIB irradiated area, i.e. FIB irradiation suppresses the ability to form the inclusion compounds. By utilizing this phenomenon, we succeeded in a microfabrication of relief structures consisting of inclusion compounds which has different fluorescence from its surrounding. Morphology, fluorescence, and IR absorption analyses indicated that hydroxyl or resorcin groups are damaged by ion beams, and consequently a formation of hydrogen-bonded networks, which play a role of a lattice caging guest molecules, becomes impossible.

Energy Technology Data Exchange (ETDEWEB)

A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.

International Nuclear Information System (INIS)

In this work, amorphous hydrocarbon (a-C:H) film deposition on metallic mirrors was studied during working shots in tokamak T-10 and at exposure in Ar/CHD3/D2 dc magnetron discharge in a special laboratory high vacuum setup. Analysis of film composition (including hydrogen content) was carried out using nuclear physical methods. Thickness and optical parameters (refractive and extinction coefficients) of the films were estimated by ellipsometry. Laboratory films can be characterized as soft a-C:H films in comparison with hard tokamak films (? = 1.2 and 1.8 g/cm3, respectively). For the first one, a linear dependence of deposition rate on mirror temperature was observed in a wide temperature range. The addition of methane into initial Ar/D2 magnetron gas mixture leads to an increase of deposition rate. The data obtained should be taken into account to prevent hydrocarbon film formation on the surface of ...

Energy Technology Data Exchange (ETDEWEB)

In addition to ceramics, alloys such as tool steel and nickel- and iron-based superalloys are being considered for high temperature applications such as missile bearings and low heat rejection engines. Studies were made to lubricate a nickel-based superalloy at 500{degrees}C, by using a vaporized aryl phosphate ester, at a concentration of 0.1% in air. From deposition and wear studies it was found that it was impossible to form a good polymeric coating on the superalloy surface. Energy dispersive X-ray analyzer (EDXA) analysis showed that this was due to minute quantities of aluminum in the alloy segregating to the surface, upon being heated to 500{degrees}C, forming a passive oxide coating. It was necessary to activate the surface, in order to lubricate the material successfully. A method of activation by electrodepositing the surface with a layer of iron oxide was developed. Once activated, a good lubricous polymer was formed on the ...

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...

Energy Technology Data Exchange (ETDEWEB)

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

International Nuclear Information System (INIS)

Along with the shrinkage of LSI geometries, a higher quality of ultrapure water has been continuously required. Analytical technology for ultrapure water has also progressed before ultrapure water production technology improvements. In this study, we performed optimization of the analytical conditions for the direct analysis of acid droplets, and established an analytical technology for measurements of trace amounts of metallic impurities deposited on a wafer surface by means of Vapor Phase Decomposition (VPD)/Inductively Coupled Plasma Mass Spectrometry (ICP-MS). As a result, analytical technology for metallic elements of the 1x10"8 atoms/cm"2 level on wafer surface has been established. By applying analytical technology to the wafer that has been contacted with ultrapure water, a new evaluation technology for ultrapure water quality by means of wafer surface contamination has been established. We confirmed good correlations between metal ...

International Nuclear Information System (INIS)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics ...

British Library Electronic Table of Contents (United Kingdom)

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

Full text of publication follows: Slightly over-stoichiometric lithium orthosilicate pebbles have been selected as one optional breeder material for the European Helium Cooled Pebble Bed (HCPB) blanket. This material has been developed in collaboration of Research Center Karlsruhe and the Schott Glass, Mainz. The lithium orthosilicate pebbles are fabricated from lithium hydroxide and silica by a melting and spraying method in a semi-industrial scale facility. Lithium hydroxide was selected as the precursor since enriched lithium hydroxide is commercially available. The lithium orthosilicate pebbles produced by the process contains oxide phases besides orthosilicate, but it was also found that the oxide phases can be decomposed by annealing at high temperatures. The lithium orthosilicate pebbles produced in this way possesses satisfactory pebble characteristics. Therefore, the authors performed out-of-pile annealing tests using the lithium orthosilicate pebbles irradiated in a research ...

Energy Technology Data Exchange (ETDEWEB)

The passive films formed in stainless steels are thin and fine oxide films, a high corrosion resistance can be provided by these films. This study formed SiO2 protective coating on the substrate of SUS 304 stainless steels by chemical vapor deposition using TEOS-O3 system. Firstly, relations of substrate temperature and deposition rate of films, chemical composition, refractive index of films were investigated. Then, the corrosion resistance of SUS 304 stainless steels coated SiO2 films was examined by activation time and an anodic polarization curve in 1 kmol[center dot]m[sup -3] HCl solution. The results were obtained as follows. Thickness of SiO2 films linearly increases with time at the deposition temperature of 473 to 673 K. Si-OH bonds would disappear above the deposition temperature of 573 K, almost perfect SiO2 films were obtained. The activation time in 1 kmol[center ...

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

Energy Technology Data Exchange (ETDEWEB)

The aim of this contract is to investigate, develop, and characterize laser-assisted processing techniques utilized to produce the fine-line, thin-metal grid structures that are required to fabricate high-efficiency solar cells. During the first quarter of this contract, a comprehensive literature search was carried out in the various state-of-the-art laser-assisted techniques for metal deposition, including laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. A compact system for the experiments involving laser-assisted photolysis of gas-phase compounds was designed and constructed. The work performed in the second quarter is detailed in this report. Metal deposition experiments have been carried out utilizing laser-assisted pyrolysis of a variety of metal-bearing polymer films and metallo-organic inks spun onto silicon substrates. Laser ...

International Nuclear Information System (INIS)

Uranium dendrites which were deposited at a solid cathode of an electrorefiner contained a certain amount of salts. These salts should be removed for the recovery of pure metal using a cathode processor. In the uranium deposits from the electrorefining process, there are actinide chlorides and rare earth chlorides in addition to uranium chloride in the LiCl-KCl eutectic salt. The evaporation behaviors of the actinides and rare earth chlorides in the salts should be investigated for the removal of salts in the deposits. Experiments on the salt evaporation of rare earth chlorides in a LiCl-KCl eutectic salt were carried out. Though the vapor pressures of the rare earth chlorides were lower than those of the LiCl and KCl, the rare earth chlorides were co-evaporized with the LiCl-KCl eutectic salt. The Hertz-Langmuir relation was applied for this evaporation, and also the evaporation rates of the salt were ...

International Nuclear Information System (INIS)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated ...

International Nuclear Information System (INIS)

The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.

Environmental Research Database

ObjectivesTo extend a set of work carried out previously at Royal Holloway, the Natural History Museum and elsewhere, and instigated, to a considerable extent, by the PI to determine~%~~%~1. whether there is any significant difference in the performance of clay minerals in the presence of leachates generated by wastes from different cultures and/or deposited in different climates;~%~~%~2. what causes some, if not all, clay minerals to aggregate after reaction with landfill Ieachate;~%~~%~3. the permeabili [continued...]DescriptionAround 1995 it was shown that that interactions between clay minerals and landfill leachate destroy the clay mineral lattice, leading to reduced liner permeability. Recent work indicates that the effect may be caused by dissolution of silica and deposition of amorphous alumina. Most work to date has been done using synthetic and natural ...

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other ...

International Nuclear Information System (INIS)

The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.

International Nuclear Information System (INIS)

Metal-organic chemical vapor deposition (MOCVD) made layers of strontium-bismuth-tantalate (SBT) were characterized by spectroscopic ellipsometry (SE) using the Adachi model [S. Adachi, Phys. Rev. B 35 (1987) 7454-7463]. The evaluated optical parameters were correlated with the physical and chemical behavior examined by X-ray diffraction (XRD). As a result, it was possible to fit the measured spectra with the Adachi model in a wide range covering the region of the band gap. The Adachi model provides electronic layer parameters like the transition energy E 0 and broadening ?. Our investigations established a correlation between XRD-determined average grain size and the electronic layer parameters.

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A prototype trumpet type nonimaging secondary concentrator has been designed and fabricated for use with the Cummins Power Generation (CPG) 7.5 kW(e) dish-Stirling system and a preliminary set of operating tests has been carried out. The secondary is 26.7 cm (10.5 in.) deep by about 69 cm (27 in.) wide, and has a geometric concentration of 1.7X. The test units were fabricated from polished copper spinnings, overcoated with vapor deposited aluminum and aluminum oxide layers and are water cooled. The basic design considerations are reviewed, the objectives and test procedures for the experiment are summarized and some preliminary results are presented.

International Nuclear Information System (INIS)

We explore a novel phenomenon of focused ion beam (FIB) induced bending of carbon nanopillars or cantilever structures. The bending occurs towards the ion beam during scanning. The explanation of this bending has been sought on the basis of a model which considers temperature rise and gradients caused by the impinging ion beam. The process is controllable and reversible, which makes it highly suitable for in situ manipulation to make desired 3D shapes by the piecewise bending of the nanopillars and cantilever structures during their fabrication using electron beam or FIB chemical vapor deposition (EB-CVD or FIB-CVD). Its usefulness in the fabrication of nanosize mechanical components has been demonstrated by making a branch structure from a single cantilever.

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Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve ...

International Nuclear Information System (INIS)

Ultra-low pure Pt-based electrodes (0.04-0.12 mg_P_t/cm"2) were prepared by dual ion-beam assisted deposition (dual IBAD) method on the surface of a non-catalyzed gas diffusion layer (GDL) substrate. Film thicknesses ranged between 250 and 750 A, these are compared with a control, a conventional Pt/C (1.0 mg_P_t_(_M_E_A_)/cm"2, E-TEK). The IBAD electrode constituted a significantly different morphology, where low density Pt deposits (largely amorphous) were formed with varying depths of penetration into the gas diffusion layer, exhibiting a gradual change towards increasing crystalline character (from 250 to 750 A). Mass specific power density of 0.297 g_P_t/kW is reported with 250 A IBAD deposit (0.04 mg_P_t/cm"2 for a total MEA loading of 0.08 mg_P_t/cm"2) at 0.65 V. This is contrasted with the commercial MEA with a loading of 1 mg_P_t_(_M_E_A_)/cm"2 where mass specific power density obtained was 1.18 ...

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Solid recycling of AZ31 Mg alloy with vapor deposition coating layer of high purity Mg was evaluated. In the open die forging experiments, two AZ31 Mg alloy specimens with the pure Mg layer were sufficiently bonded by forging at 673 K. Furthermore, the Al and Zn of the AZ31 substrate diffused up to the center of the pure Mg layer. By the theoretical analysis, it is suggested that the grain boundary diffusion enhanced by grain refinement due to hot forging contributes to the solid state bonding of the specimens. Also, the solid recycled specimen was fabricated from the AZ31 Mg substrate with pure Mg layer by hot extrusion at 673 K. The solid recycled specimen showed almost the same tensile properties as the virgin extruded specimen. This is probably related not only to the grain boundary diffusion but also severe plastic deformation by hot extrusion. (orig.)

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The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in ...

International Nuclear Information System (INIS)

The changes in microstructure of a specially prepared boron nitride (BN) film as a function of film depth were studied by high resolution transmission electron microscopy (HRTEM) and other materials analysis tools. These changes were then correlated to the changes in processing parameters during film growth. The analyzed film was fabricated by the four-step ion-assisted deposition procedure known to be effective in film-stress engineering for the formation and retention of a thick cubic BN (cBN) layer with a three-step buffer-layer deposition. In this deposition, the energy of the ions assisting cBN formation was increased stepwise from 200 to 280, and then to 360 eV [S.F. Wong, C. W. Ong, G.K.H. Pang, K.Z. Baba-Kishi, W. M. Lau, J. Vac. Sci. Technol. A 22 (2004) 676]. The nominal thickness of the cBN layer was 650 nm and that for each of the three buffer layers was about 160 nm. Both the HRTEM and electron diffraction ...

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Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 {omega}/cm up to the ...

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The design of the first structural wall (FSW) in an inertial confinement fusion (ICF) reactor requires some knowledge of the expected wall loading produced by x-ray and neutron deposition; specifically in the High Yield Lithium Injection Fusion Energy (HYLIFE) reactor, wall loading results from two sources -- gas shock and liquid impact. Gas shock is derived from x-ray deposition in the thin layers of exposed blanket material, producing ionized vapor, which will generate gas shock on the FSW. Liquid impact, on the other hand, results from the acceleration of liquid blanket material by two possible forces -- the drag from vapor expansion through the blanket material and the neutron-induced isochoric disassembly process. Both impacts, however, are coupled by the interaction of hot gas expanding through the liquid blanket. This paper discusses scaling methods for estimating pressure and impulse on the ...

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A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

British Library Electronic Table of Contents (United Kingdom)

In the present work, bulk amorphous and nanocrystalline Al83Fe17 alloys were obtained by consolidation of mechanically alloyed powders. Mechanical alloying of Al-17% Fe powder mixture yielded powder with an amorphous structure. Thermal behaviour of the milling product was examined using differential scanning calorimetry. This investigation revealed that the amorphous phase crystallised above 380^oC. The amorphous powder was compacted under a pressure of 7.7GPa in different conditions: at 380^oC for 600s and at 1000^oC for 180s. Structural investigations of the bulk material revealed that the amorphous structure was retained after consolidation process applied at 380^oC. Compaction under high pressure at 1000^oC caused crystallisation of the amorphous phase and appearance of metastable nano...

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We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of ...

International Nuclear Information System (INIS)

Research was conducted at Pacific Northwest Laboratory to develop high photosensitivity adaptive optical elements utilizing ion implanted lanthanum-doped lead-zirconate-titanate (PLZT). One centimeter square samples were prepared by implanting ferroelectric and anti-ferroelectric PLZT with a variety of species or combinations of species. These included Ne, O, Ni, Ne/Cr, Ne/Al, Ne/Ni, Ne/O, and Ni/O, at a variety of energies and fluences. An indium-tin oxide (ITO) electrode coating was designed to give a balance of high conductivity and optical transmission at near uv to near ir wavelengths. Samples were characterized for photosensitivity; implanted layer thickness, index of refraction, and density; electrode (ITO) conductivity; and in some cases, residual stress curvature. Thin film anti-ferroelectric PLZT was deposited in a preliminary experiment. The structure was amorphous with x-ray diffraction showing the beginnings of a structure at ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques for producing high-quality solar cell metallization patterns have been investigated, developed, and characterized. During the early stages, preliminary investigations were carried out on a variety of promising laser-assisted metallization schemes, and the best of these was selected for further development. A comprehensive literature search initially yielded information on state-of-the-art laser-assisted techniques for metal deposition such as laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. Initial experiments on laser-enhanced electroplating yielded very promising results with linewidths as narrow as 25 ..mu..m and local plating speeds as high as 12 ..mu..m/s being achieved. Metal deposition experiments were carried out utilizing laser-assisted pyrolysis of a variety of metal-bearing polymer films and ...

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Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

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Room temperature continuous wave operation of red ([lambda][sub 0] [approximately] 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 [times] 64 arrays have a pitch of 100 [mu]m with device diameters of 15 [mu]m with device diameters of 15 [mu]m. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGaInP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operation simultaneously with peak output powers >0.45 mW, threshold current <1.5 mA, and threshold voltages [<=] 2.7 V. The differential quantum efficiencies exceed 10%.

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Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

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Infrared astronomical instruments require absorptive coatings on internal surfaces to trap scattered and stray photons. This is typically accomplished with any one of a number of black paints. Although inexpensive and simple to apply, paint has several disadvantages. Painted surfaces can be fragile, prone to shedding particles, and difficult to clean. Most importantly, the vacuum performance is poor. Recently a plasma enhanced chemical vapor deposition (PECVD) process was developed to apply thick (30 {micro}m) diamond-like carbon (DLC) based protective coatings to the interior of oil pipelines. These DLC coatings show much promise as an infrared black for an ultra high vacuum environment. The coatings are very robust with excellent cryogenic adhesion. Their total infrared reflectivity of < 10% at normal incidence approaches that of black paints. We measured outgas rates of <10{sup -12} Torr liter/sec cm{sup 2}, comparable to bare ...

International Nuclear Information System (INIS)

The Fast Flux Test Facility (FFTF) is a 400-MWt, sodium-cooled reactor located on the Hanford Site near Richland, Washington, USA. The FFTF is owned by the U.S. Department of Energy and is operated by the Westinghouse Hanford Company. The FFTF was designed to test fuels and materials for use in liquid metal reactors. Since initial operation in 1982, anticipated breaches of experimental fuel pins have released fission products, including cesium, into the primary sodium. Because of its high volatility, cesium vaporizes into the cover gas space, where it condenses on components and equipment and is transported into the cover gas outlet. Because of the long half-life of "1"3"7Cs, these deposits result in long-term, local radiation levels that make contact maintenance difficult. Thus, a cesium trap was installed in FFTF to reduce the cesium level in the sodium. The trap could also permit a Run Beyond Cladding Breach (RBCB) program without ...

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and ...

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Both the sign and magnitude of residual stress can vary with the thickness of sputter deposited films. The origins of this behavior are not well understood. In this work, the authors consider the correlation between the residual stress behavior and the depth dependence of impurities in thin (2.5 nm--150 nm) sputtered Mo and Ta films. They also consider the effects of phase transformations and microstructural changes on the stress behavior. Films were deposited onto Si substrates with native oxide. The residual stress observed in the Mo films varied from highly compressive at 2.5 nm film thickness to {approximately}0 at 10 nm thickness. Ta films also exhibited a high compressive stress, which relaxed from highly compressive to tensile between 10 nm and 50 nm film thickness. Impurities in the films may originate from the sputtering targets, the background gases, and the substrate surfaces. Auger Electron Spectroscopy (AES) results showed the ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

Tube supports used in the tube bundles of PWR steam generators have consisted of mechanical devices located at intervals along the tube bundle. The presence of tube supports creates regions of restricted flow with altered flow patterns and increased pressure drop. An additional and very important effect is also the possibility of local complete vaporization or dryout occurring in the tube/support flow passage and crevices. The thermal/hydraulic conditions at which dryout occurs are of particular interest because of the possibility of the deposition of dissolved solids with the occurrence of dryout. As long term build-up of solid deposition could have a deleterious effect, knowledge of the conditions at which dryout occurs would possibly provide a means to avoid this build-up. A test program, sponsored by the Steam Generator Project Office of the Electric Power Research Institute, was conducted to determine the ...

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This article considers the fundamentals of what happens in asolid when it is impacted with a medium energy gallium ion. The study ofthe ion/sample interaction at the nanometer scale is applicable to mostfocused ion beam (FIB) based work even if the FIB/sample interaction isonly a step in the process, e.g., micromachining or microelectronicdevice processing. Whereas the objective in other articles in this issueis to use the FIB tool to characterize a material or to machine a deviceor transmission electron microscopy (TEM) sample, the goal of the FIB inthis article is to have the FIB/sample interaction itself become theproduct. To that end, the FIB/sample interaction is considered in threecategories according to geometry: below, at, and above the surface.First, the FIB ions can penetrate the top atom layer(s) and interactbelow the surface. Ion implantation and ion damage on flat surfaces havebeen comprehensively examined; however, FIB applications require thefurther investigation of high ...

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Objective is to study the effects of local structure, interatomic forces, and atom size on the mobility of metal atoms in amorphous silica and at the silica surface. EXAFS studies of Zn and Pt in silica are reported. (DLC)

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A process for the generation of halogens from halide-containing solutions includes the step of conducting electrolysis of the solutions in an electrolytic cell having a platinum based amorphous metal alloy anode.

International Nuclear Information System (INIS)

Slovak May 1981. p. 30. Czechoslovakia Sandrik, R. Kliment, V.

Energy Technology Data Exchange (ETDEWEB)

Experiments were conducted which established that the higher passivating capacity of Ni/sub 60/Nb/sub 40/ alloys in the amorphous state and higher efficiency of the anodic process of generation of chlorine (2 N NaCl + HCl to pH = 0) in comparison with the crystalline state are determined by higher homogeneity and density of the passive films formed on the amorphous alloy and by higher electron conduction which depends directly on the difference in the structure of the passive films formed on the alloys in the amorphous and crystalline states.

International Nuclear Information System (INIS)

Single phase amorphous Al_xHf_1_0_0_-_x alloys with a wide amorphization range (33#<=#x#<=#75) were synthesized by the solid-state interdiffusion of pure polycrystalline Al and Hf powders at room temperature using a rod-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders were investigated by means of X-ray diffraction, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling (0-173 ks) are intermixed to form amorphous phase(s) upon heating to about 980 K by so-called thermally assisted solid-state amorphization (TASSA). The amorphization heat formation for the binary Al_xHf_1_0_0_-_x system via TASSA, ...

Energy Technology Data Exchange (ETDEWEB)

Substantial changes in the radial distribution function of amorphous Si films have been observed in neutron-diffraction studies. The spectra indicate changes in short-range order associated with an approx.11% modification in the bond-angle distribution width. The results allow the first direct comparison of structural and vibrational Raman probes of variations in local order in thin-film amorphous solids. Good agreement is obtained between the measured bond-angle variation and that based on Raman estimates.

International Nuclear Information System (INIS)

Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.

International Nuclear Information System (INIS)

We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous ...

International Nuclear Information System (INIS)

After being pre-plated a zinc layer, an amorphous Al-Mn alloy coating was applied onto the surface of AZ31B magnesium alloy with a bath of molten salts. Then the corrosion performance of the coated magnesium alloy was examined in 3.5% NaCl solution by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The results showed that the single Zn layer was active in the test solution with a high corrosion rate while the Al-Mn alloy coating could effectively protect AZ31B magnesium alloy from corrosion in the solution. The high corrosion resistance of Al-Mn alloy coating was ascribed to an intact and stable passive film formed on the coating. The performances of the passive film on Al-Mn alloy were further investigated by Mott-Schottky curve and X-ray photoelectron spectroscopy (XPS) analysis. It was confirmed that the passive film exhibited n-type semiconducting behavior in 3.5% NaCl solution with a carrier density two orders of magnitude less ...

Science.gov (United States)

Metastable yttrium-oxide films are synthesized using reactive sputter deposition. The yttrium concentration of the as-deposited film is found to vary as a function of the sputter deposition rate. In addition to the synthesis of the cubic equilibrium phase...

Science.gov (United States)

... 2-93 An Atmospheric Particle Emits Electromagnetic ... atmospheric water vapor produces a hydrometeor. ... subject to wind movement (either blowing ...

Energy Technology Data Exchange (ETDEWEB)

The history of explosives vapor detection includes almost every detection strategy known to man. Initial attempts to utilize these techniques were dismal failures. However, with the development of the Electron Capture Detector (ECD), the first promising detection of explosives vapors became possible. The present commercial explosives detectors detect the higher vapor pressure materials but not the whole spectrum. This paper describes the basic properties of explosives molecules and our research to utilize these properties for increased detection sensitivity.

Science.gov (United States)

No abstract prepared.

Science.gov (United States)

... Accession Number : ADD001040. Title : Process for Uniformly Depositing Resin in Combustible Cartridge Cases. Descriptive Note : Patent,. ...

Science.gov (United States)

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

International Nuclear Information System (INIS)

Ti and its alloys (Ti-6Al-4V) have been used in different engineering applications due to their several outstanding properties. Nevertheless, their use in practical applications is limited in many cases due to their poor tribological property. Researches are ongoing on surface modification of Ti based materials by different plasma and ion based techniques to overcome this problem. However, the conventional plasma nitriding techniques have several problems such as formation of an arc, increased possibility of surface contamination due to a comparatively higher operating pressure, production of a very thin nitrided layer after a long processing time, etc. In this present work, the possibility of a new low-pressure plasma nitriding process using a Plasma Enhanced Chemical Vapor Deposition (PECVD) based saddle field fast atom beam source on a Ti-6Al-4V alloy sample is investigated. Plasma nitriding was carried out at 900 deg. C and at a pressure ...

Energy Technology Data Exchange (ETDEWEB)

To evaluate a dose conversion factor from the `Working Level of Month` (WLM) of radon to the absorbed dose (mGy), the quality of radon and its progeny was assessed, and exposures controlled for each deposition region were planed as follows: 1) exposure of radon gas to the entire respiratory tract, 2) exposure of `unattached` fractions to the upper respiratory tract, 3) exposure of `attached` fractions onto ultrafine particles to the deep lung, 4) exposure of `attached` fractions onto fine particles to the lower respiratory tract, 5) exposure of `attached` fractions onto coarse particles to the upper respiratory tract. In this preliminary study, a prototype exposure system of radon and its progeny for small rodents was designed. A whole body exposure chamber with a volume of about 0.5 m{sup 3} was used, which it held 20 rats. The aging and mixing chamber separated by the exposure chamber had a volume of about 1 m{sup 3}. As career aerosols of radon progeny, carnauba ...

International Nuclear Information System (INIS)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of ...

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Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior ...

International Nuclear Information System (INIS)

In order to practice design-by-analysis of thermohydraulics design of BWR fuel rod bundles, the subchannel analysis would play a major role. There, one of the immediate concerns is improvement in its predictive capability of boiling transition phenomena on the fuel rod surface. This capability strongly depends on the modeling of thermohydraulics phenomena of interests: 1) vapor-liquid redistribution by inter-subchannel exchanges due to the diversion cross flow, turbulent mixing and void drift, 2) liquid film behaviors, 3) transition of two-phase flow regimes, 4) droplet entrainment and deposition and 5) spacer-droplet interactions. These are considered to be five key factors in understanding the BT in BWR fuel rod bundles. This paper describes a progress and current status in the second year of the three year project on developing generalized boiling transition models with the above five key factors being focused on. A combined approach of ...

Energy Technology Data Exchange (ETDEWEB)

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the ...

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The damage induced by low-temperature proton irradiation in amorphous Pd/sub 80/Si/sub 20/ prepared by ion implantation is studied via electrical resistivity measurements. Our experimental results concerning the initial damage rate and the resistivity saturation are compared to the results obtained for electron and high energy /sup 16/O irradiation of amorphous Pd/sub 80/Si/sub 20/ quenched from the melt. The resistivity curve is analyzed in terms of irradiation-induced point defects.

Energy Technology Data Exchange (ETDEWEB)

Operation safety and reliability are major guidelines in the design of city-gate units. Conventional natural gas heaters operate by a indirect mechanism, where liquid water is used to transfer heat by natural convection between the combustion chamber and the natural gas coil. In this work, the concept of vapor chamber is evaluated as an indirect gas heater. In a vapor chamber, liquid water is in contact with the heat source, and vaporizes. The vapor condenses in contact with the heat sink. A reduced scale model was built and tested in order to compare these two heating concepts where the combustion chamber was replaced by electrical cartridge heaters. This engineering model can operate either as a conventional heater or as a vapor chamber. The comparison between the concepts was done by inducing a controlled power to the cartridges and by measuring the resulting temperature ...

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A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

International Nuclear Information System (INIS)

Recent advances made in the area of amorphous and nanocrystalline alloys exhibiting high saturation inductions are reviewed. A new chemical composition was identified that achieves a saturation induction of 1.64 T in an iron-based amorphous alloy. This alloy, when used in electrical transformers, shows a much improved performance over the existing amorphous alloy. Nanocrystalline FeCoCuNbSiB alloys are found to have saturation induction levels reaching 1.7 T. These materials are suited for use in sensors and inductors carrying large currents. Some of these nanocrystalline alloys show a BH squareness ratio exceeding 90%, which can be utilized in pulse power devices. Recent developments in the applications of these materials are also pointed out.

International Nuclear Information System (INIS)

The main compositions of iron-base amorphous self-fluxing alloy powders of 150 mesh, used in this work, are Fe, Cr, Ni, W, Mo, B, Si and C. The ranges of each element in at% are (65-70)Fe, (3-5)Cr, (2-4)Ni, (2-4)W, (1-2)Mo, (10-14)B, (4-7)Si and (2-3)C. The atomic ratio of metal-metalloid is about 80:20, so this alloy is abbreviated as M_8_0X_2_0. The material on which coatings were deposited is 1020 steel, austenitized for 1h at 880 C, water quenched, and tempered at 180 C for 1h. This heat treatment resulted in a low carbon martensite structure with a hardness of HRC35-45. After cleaning, shot blasting and preheating the steel to about 200 C, the authors sprayed a thin Ni-Al alloy layer of about 0.1--0.15mm in thickness onto the specimen by means of an oxygen-acetylene torch to provide better bonding of the coating with substrate. Then the M_8_0X_2_0 and M_8_0X_2_0+8%CeO_2 alloy coatings were sprayed to a thickness of about 0.6--0.8mm. The ...

International Nuclear Information System (INIS)

Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)

Energy Technology Data Exchange (ETDEWEB)

Amorphous metals have an atomic structure resembling that of glass, and have high strength, toughness, and excellent magnetic properties for transformer applications. This type of metal has the potential to reduce the core losses of electromagnetic apparatus by 70-75% compared to the best grain-oriented silicon iron currently used. If all 4 million distribution transformers now in service in Canada were replaced by the more efficient amorphous units, it is estimated that over 5.25 billion kWh of energy could be saved annually. The experience of the General Electric (GE) Company and other researchers with operation of amorphous transformers is described. GE first tried operating amorphous metal transformers on a utility distribution system in April 1982. The shell-type cruciform design showed stable, low-loss performance over eight years of service. GE and the Electric Power Research Institute cooperated ...

British Library Electronic Table of Contents (United Kingdom)

The effect of the moisture content in amorphous polymers (PS, PVC, PMMA) on their electro-physical properties is considered. Analytical relationships describing the inflence of the external-field frequency and environmental relative humidity on the conductivity of the polymers are given. For the use of these polymers as active elements of moisture sensors, the moisture-resistive effect is estimated.

Science.gov (United States)

This paper describes the anelastic strain recovery and the strain hardening of amorphous metals and presents the experimental result that creep deformation is represented by a viscoelastic model consisting of rheological elements. Materials studied were 80Pd--20Si, 80Fe--13P--7C, and 60 Cu--40 Zr. (DLC)

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Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H/sup -/ or /sup 3/He/sup -/ ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams.

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Molar enthalpies of sublimation of 1,2,4-, 1,2,3-, and 1,3,5-tri-hydroxy-benzene, were obtained from the temperature dependence of the vapor pressure measured by the transpiration method. The molar enthalpies of fusion and molar heat capacities of these compounds were measured by DSC. The measured data sets of vaporization, sublimation and fusion enthalpies were checked for internal consistency. Strength of the inter- and intra-molecular hydrogen bonding in di- and tri-hydroxy-benzenes have been assessed.

Energy Technology Data Exchange (ETDEWEB)

Using gasoline as an example of additives for cold start improvement, fuel vapor composition of methanol-gasoline mixtures, fuel evaporation rate in consideration of temperature drop due to heat of fuel evaporation, air fuel ratio, stoichiometric air fuel ratio and excess air ratio of fuel vapor were calculated. The mixture formation of methanol-gasoline mixtures at low temperature in otto cycle engines was studied. Van Laar's empirical formula was used to estimate the partial pressure of high-percentage methanol blends. It was found that the most part of fuel vapor is occupied by gasoline, even when a small amount of gasoline is added to methanol resulting to an extremely small excess air ratio. It is obvious that this vapor pressure adjustment using gasoline is the dominant factor for improvement in cold startability. (10 figs, 1 tab, 10 refs)

Energy Technology Data Exchange (ETDEWEB)

We present a 1-D heat transfer, melting, vaporization and resolidification model describing the interaction of a scanning continuous-wave laser with a metal surface wherein the beam power is constant. A physical model based on the Stefan problem is developed with appropriate boundary conditions. The effects of processing parameters on process variables are investigated numerically by varying beam diameters, scan speeds and substrate temperatures for Nickel. Relations are derived for the times to initiate melting, to initiate vaporization, to reach maximum melting depth, for melting-resolidification, and for maximum melting and vaporization depths. Surface temperatures are compared with approximate closed form solutions. (Author)

British Library Electronic Table of Contents (United Kingdom)

In radio signal-based observing systems, such as Global Positioning System (GPS) and Interferometric Synthetic Aperture Radar (InSAR), the water vapor in the atmosphere will cause delays during the signal transmission. Such delays vary significantly with terrain elevation. In the case when atmospheric delays are to be eliminated from the measured raw signals, spatial interpolators may be needed. By taking advantage of available terrain elevation information during spatial interpolation process, the accuracy of the atmospheric delay mapping can be considerably improved. This paper first reviews three elevation-dependent water vapor interpolation models, i.e., the Best Linear Unbiased Estimator in combination with the water vapor Height Scaling Model (BLUE?+?HSM), the Best Linear Unbiased Es...

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Apparatus and method are described for the vaporization of liquid fuel oils to produce a gaseous mixture suitable for burning in a burner normally designed for operation utilizing natural gas.

British Library Electronic Table of Contents (United Kingdom)

In this study, we thoroughly analyzed abrupt behaviors, trends, and periodicity properties of water vapor flux and moisture budget entering and exiting the four edges of the Pearl River basin based on the NCAR/NCEP reanalysis dataset by using the continuous wavelet transform and the simple two-phase linear regression technique. Possible implications for hydrological cycle and water resource management of these changes are also discussed. The results indicate that: (1) the water vapor propagating through the four edges of the Pearl River basin is decreasing, and it is particularly true for the changes of the water vapor flux exiting from the north edge of the study river basin. The transition point from increase to decrease occurs in the early 1960s; (2) The wavelet transform spectra indica...

International Nuclear Information System (INIS)

Additional measurements have been made of deposition and retention of inhaled radioactively labeled iron oxide aerosols generated by a spinning top aerosol generator.

Energy Technology Data Exchange (ETDEWEB)

The thermal spike model has been successfully applied to track formation by swift heavy ions in insulators. Arguments are given supporting the assumption that the thermal spike mechanism is also valid for the anisotropic growth. The glass transition temperature is used as the main thermal parameter of the amorphous solids. Experimental results on the track formation in {alpha}-quartz and in crystalline Ni{sub 3}B and also on the anisotropic growth in Pyrex and Synsil glasses, in amorphous Pd{sub 80}Si{sub 20}, Ni{sub 3}B and Fe{sub 85}B{sub 15} are discussed. Good agreement is found with the predictions of the thermal spike model. (orig.).

International Nuclear Information System (INIS)

#beta#-sialon ceramics of equal overall compositions but containing amorphous, partly crystalline and almost completely crystalline intergranular phase(s) have been oxidized in oxygen at 1350 deg C for 20 hours. The obtained weight gain curves do not follow the parabolic rate law (#DELTA#W/A_0)"2= k_pt + #beta#. To the extent that crystallization occurs in the oxide scale during the oxidation experiment, the amorphous cross section area through which oxygen most easily diffuses will decrease with time. A brief description of this new rate law is given, and the obtained oxidation curves will be discussed within that framework. 4 refs., 2 tabs., 2 figs.

Energy Technology Data Exchange (ETDEWEB)

Internal friction of amorphous Pd/sub 80/Si/sub 20/ metal doped with hydrogen or deuterium was measured with a specially designed apparatus using amorphous metal sheet as a part of the electric oscillating circuit. Two peaks in Q/sup -1/ curve are observed. Applying the peak shift method to the first Snoek-like peak, we can determine the relaxation time from which the microdiffusion coefficient can be calculated. The obtained microdiffusion coefficient is about 10/sup -14/ m/sup 2//s at 200 K, being comparable with the macrodiffusion coefficient obtained from the releasing method. It can, however, not elucidate the hydrogen isotopic effect on the peak temperature of Q/sup -1/ curve, the activation energy for relaxation and the relaxation time from the present work because of the broadness of obtained Q/sup -1/ curve.

Energy Technology Data Exchange (ETDEWEB)

Using the method of high resolution electron microscopy (HEM) the shape and structure of powder particles of elementary amorphous boron, prepared by plasmochemical reduction of boron trichloride by hydrogen before and after their heat treatment in vacuum of approximately 1 x 10 SPa at the temperature of approximately 800 deg C for 30 min, have been studied. It is established, that ultradispersed particles of amorphous boron present flat formations (discs) of stable configurations, composed of several icosahedrons (structural elements); their growth during heat treatment takes place first in habitus plane without far order formation, and then, after attaining the diameter of approximately 500 A, the process of three-dimensional crystallization starts, which leads to the formation of crystal lattice of boron US -rhombohedric modification.

British Library Electronic Table of Contents (United Kingdom)

Fermented sausages were produced with 25%, 50%, 75% or 100% of their pork back fat content replaced by amorphous cellulose gel. The sausage production was monitored with physical, chemical and microbiological analyses. The final products were submitted to a consumer study, and the volatile compounds of the final products were extracted by solid-phase microextraction and analyzed by GC/MS. The reformulated fermented sausages had significant reductions in fat and cholesterol, and the volatile compounds derived from lipid oxidation were also reduced in the final products. These results suggest that the substitution of up to 50% of the pork back fat content by amorphous cellulose gel can be accomplished without a loss of product quality, enabling the production of fermented sausages with the l...

Energy Technology Data Exchange (ETDEWEB)

This document provides stakeholder evaluations on innovative technologies to be used in the remediation of volatile organic compounds from soils and ground water. The technologies evaluated are; in-well vapor stripping, in-situ bioremediation, and gas membrane separation.

Energy Technology Data Exchange (ETDEWEB)

This project dealt with use of condensing heat exchangers to recover water vapor from flue gas at coal-fired power plants. Pilot-scale heat transfer tests were performed to determine the relationship between flue gas moisture concentration, heat exchanger design and operating conditions, and water vapor condensation rate. The tests also determined the extent to which the condensation processes for water and acid vapors in flue gas can be made to occur separately in different heat transfer sections. The results showed flue gas water vapor condensed in the low temperature region of the heat exchanger system, with water capture efficiencies depending strongly on flue gas moisture content, cooling water inlet temperature, heat exchanger design and flue gas and cooling water flow rates. Sulfuric acid vapor condensed in both the high temperature and low temperature regions of the heat ...

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Measurements of the double-electron-capture process in which a positive ion of iodine becomes a negative ion in a single collision with a magnesium atom are reported between 20 and 90 keV. The cross section is comparable to that for the rare gases and not as large as might be expected from a two-valence-electron atom. This process is probably insignificant in the production of negative ion beams using a magnesium-vapor target.

Energy Technology Data Exchange (ETDEWEB)

The adsorption of mercury vapor on particles was studied by using soot particles generated by incineration of sewage sludge (EP-ash) and activated carbon particles. Through the experiments, it was found that, at 298 K, the EP-ash has a fairly high adsorption capacity for mercury vapor in the order of 10/sup -6/g/g, which is between that of the ordinary soils and that of activated carbon particles. Furthermore, it was found that physical adsorption of mercury vapor on the studied particles at high temperature is described by Dubinin's equation. On the basis of the equation, it was shown that EP-ash physically adsorbs very little mercury at high temperature, and therefore, most mercury in the EP-ash is chemically adsorbed or contained in a form of mercury compounds. Nevertheless, the total amount of mercury contained in the particles is very little compared to the total mercury in the exhaust gases so that most ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

KoreaScience (Korea)

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Science.gov (United States)

... wood, kitchen wastes, and human faeces with the ash from such burning deposited and retained in an ...

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This report attempts to bring together available information on the coal deposits of Antarctica and discuss factors that would be involved if these deposits were to be explored and mined. Most of the reported principal coal deposits in Antarctica lie generally within the Transantarctic Mountains: the majority are of Permian age and are present in the Victoria Group of the Beacon Supergroup. Several other deposits have been recorded in East Antarctica and in the Antarctic Peninsula, including minor occurrences of Mesozoic and Tertiary coal and carbonaceous shale.

UK PubMed Central (United Kingdom)

Amorphous silicates having small particles with a large surface area were found to have high nonspecific adsorption capacity. Investigations with Escherichia coli T4 bacteriophage have...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

Energy Technology Data Exchange (ETDEWEB)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles ...

International Nuclear Information System (INIS)

The possibilities to grow isolated structures of complex oxides by pulsed laser deposition through stencils were investigated. A stencil consisting of a SiN membrane with apertures of several hundred nanometers embedded in a Si chip is placed in front of a heated substrate (up to 750 degrees Celsius). Deposition through these apertures results in resistless, direct patterning by local deposition of complex oxides like ferroelectric Lead Zirconate Titanate. The created isolated structures were analyzed by AFM imaging. Under-deposition, in this work called broadening, is inevitable during stencil deposition and is depending on deposition parameters, especially pressure. Different causes of broadening are mapped and discussed.

Energy Technology Data Exchange (ETDEWEB)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

CERN Document Server

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

International Nuclear Information System (INIS)

The room-temperature anisotropy of amorphous Fe_4_0Ni_3_8Mo_4B_1_8 (METGLAS 2628MB) ribbons after various heat treatments has been studied by Moessbauer spectroscopy. The average magnetization direction becomes significantly more out-of-plane after heating above 650 K but below the crystallization temperature. X-ray diffractograms suggest an atomic rearrangement has occurred. (orig.).

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

International Nuclear Information System (INIS)

Structural changes of a Ni-P amorphous alloy under focused-ion-beam (FIB) irradiation have been examined using transmission electron microscopy. On the irradiated plane, the formation of crystallographically orientated nanosized crystals (NCs), with the particle size of approximately 10 nm, was observed. A series of electron diffraction analyses have revealed that NCs have a face-centered-cubic (fcc) structure and the following orientation relationships between the NCs and the FIB direction were found. These are, irradiated plane//(111)_f_c_c and FIB direction//_f_c_c.

Energy Technology Data Exchange (ETDEWEB)

The total and differential atomic pair-correlation functions of an icosahedral (quasicrystalline) solid were determined for the first time, directly by the differential anomalous-x-ray-scattering technique using synchrotron radiation. The observed atomic distances involving uranium atoms in icosahedral Pd/sub 58.8/U/sub 20.6/Si/sub 20.6/ suggest the presence of a quasicrystalline sublattice with vertex decoration. The pair distribution functions in the icosahedral and amorphous phases are similar up to the second-nearest neighbors, or up to 6 A-circle.

Energy Technology Data Exchange (ETDEWEB)

In order to investigate the role of amorphous SiO{sub 2} particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO{sub 2} was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of {gamma}-phase and amorphous nano-SiO{sub 2} particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO{sub 2} particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite ...

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 digit lower defect density than the conventional one of ...

International Nuclear Information System (INIS)

Energy deposition process by relativistic fast electrons produced by ultra-intense laser pulses is discussed. The process is calculated with a two dimensional Fokker-Planck simulation code including binary and collective collisions coupled with electromagnetic field. We focused on Velocity Distribution Function (VDF) dependence in the simulation. The results show that the spread angle of the fast electrons distribution affects energy deposition area and deposited energy is concentrated in the vicinity of the propagation axis of the fast electrons. It may be also suggested that self-pinch effect of a fast electron beam causes large deposition energy. (author)

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The understanding of fission product deposition in realistic steam generator conditions is needed for release estimates in PSA studies, and for the design of efficient accident management procedures. This is considered very important because primary-to-secondary leakages risk dominant sequences in many plants. Furthermore, the decay heat of the fission product deposits adds to the thermal load to the steam generator tubes also in other sequences, especially in case of cold leg leakages. This brings out the concern of induced steam generator tube ruptures in cases, where the steam generators are initially intact. The experimental data showed that the highest deposited fraction within the tubes were found in cases with lowest flow velocities. The minimum value of the deposited fraction was observed at intermediate flow velocities. With these relatively low Reynolds numbers, the results calculated with ...

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Real-time neutron radiography has been used to study the dynamic behavior of two-phase flow and measure vapor fractions in a steam-water duct at atmospheric pressure. This unique experimental technique offers one the opportunity to observe and record on videotape now Patterns and transient behavior of two-phase flow inside opaque containers without perturbing the environment. The neutron radiographic technique is non-intrusive and requires no special transparent window region. Data are recorded simultaneously over a large area of interest. Image processing of the video data can be employed to measure bubble velocities and time-averaged and Instantaneous vapor fractions.

Science.gov (United States)

We present a numerical model of vapor-dominated reservoirs which is based on the well-known conceptual model of White, Muffler, and Truesdell. Computer simulations show that upon heat recharge at the base, a single phase liquid-dominated geothermal reservoir in fractured rock with low matrix permeability will evolve into a two-phase reservoir with B.P.D. (boiling point-for-depth) pressure and temperature profiles. A rather limited discharge event through cracks in the caprock, involving loss of only a few percent of fluids in place, is sufficient to set the system off to evolve a vapor-dominated state. The attributes of this state are discussed, and some features requiring further clarification are identified. 26 refs., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

A study was made of employee exposure to oil sludge and vapors during oil-sludge removal and maintenance activities at the Alyeska Pipeline Service Company's Ballast Water Treatment Facility, Valdez, Alaska. Total hydrocarbons, except benzene, toluene, and xylene, showed concentrations from 371 to 1228mg/m3. Of eight maintenance workers, five reported headache, dizziness, or nausea when working without a respirator. The authors conclude that workers were potentially exposed to benzene vapors and total hydrocarbon vapors exceeding the evaluation criteria for these substances. The authors recommend the use of respiratory protection measures to reduce exposures during work operations.

Science.gov (United States)

Using the infrared spectroscopy method, we have studied the effect of thermal dehydration (under vacuum and in air) and treatment with water vapor on the acid centers of very high silicon zeolites of the ZSM type. We have shown that dehydration under vacuum and in air completely and irreversibly removes the OH groups at 1120/sup 0/K, while treatment with water vapor removes these groups at 770/sup 0/K. The Lewis acid centers of dehydrated zeolites (represented by two types of centers) are more heat-stable than the Bronsted acid centers, but the vapor treatment at 1020/sup 0/K leads to the disappearance of the Lewis acid centers. In this work, we discuss the reasons for destruction of the acid centers of the zeolites under different treatment conditions.

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

Energy Technology Data Exchange (ETDEWEB)

Full text of publication follows:In order to practice a design-by-analysis of thermohydraulics design of BWR fuel rod bundles, the subchannel analysis would play a major role. There, the immediate concern is improvement in its predictive capability of CHF due in particular to the film dryout (boiling transition phenomena: BT) on the fuel rod surface. Constitutive equations in the subchannel analysis formulation are responsible for the quality of calculated results. The constitutive equations are a result of integration of the local and instantaneous description of two-phase flows over the subchannel control volume. In general, they are expressed in terms of subchannel-control-volume- as well as area-averaged two-phase flow state variables. In principle the information on local and instantaneous physical phenomena taking place inside subchannels must be counted for in the algebraic form of the equations on the basis of a more mechanistic modeling approach. They should include also ...

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This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge ...

British Library Electronic Table of Contents (United Kingdom)

A methodology for the determination of the rare earth elements in uranium oxides by ion microprobe has been set up on a Cameca ims-3f instrument. An uranium oxide reference material from a syn-metamorphic uranium deposit related to albitisation has also been developed for this type of analysis. Applications of the methodology are presented for a series of uranium oxides selected from some major uranium deposit types: from the world's highest grade unconformity-related uranium deposit from the Athabasca Basin (Saskatchewan, Canada; the Shea Creek and the McArthur River examples), a perigranitic vein-type deposit (Pen Ar Ran, Vendee, France) and a volcanic caldera-related deposit (Streltsovkoye, Transbaikalia, Russia). Each type of uranium deposit appears to have a specific REE signature. Al...

UK PubMed Central (United Kingdom)

For terrestrial animals and plants, a fundamental cost of living is water vapor lost to the atmosphere during exchange of metabolic gases. Here, by bringing together previously developed models for...Full Text Available

Science.gov (United States)

A dielectric liquid having entrained bubbles of gas or vapor is subjected to an electric field applied between spaced electrodes (112, 116) which generates microdischarges (and thus plasma) within the bubbles, allowing modification of the properties of th...

International Nuclear Information System (INIS)

Nuclear energy provides a third of Europe's electricity with nearly no greenhouse-gas emissions. Sustained efforts are now being conducted to harmonize regulations all over Europe through WENRA and to converge on technical nuclear safety practices within the TSO network ETSON (European Technical Safety Organizations Network). In CANDU type NPP the tritiated water occurs by the neutron bombardment of deuterium. The tritiated water vapors imply health hazard (in the critical organs of the body the water presents a 10 day average biological half-life) and the early detection in nuclear plants of tritium emissions is important because the tritiated water vapors have the same characteristics as of atmospheric water vapors. By detecting tritiated vapors, the monitoring system ensures the following objectives: (a) indicates levels of tritium generally due to heavy water leakage, (b) reduces the possibility of ...

Energy Technology Data Exchange (ETDEWEB)

Explosives molecules have a number of unique properties. These properties are discussed. They include low vapor pressures, electronegativity, ''stickiness,'' frangibility, and thermal instability. The program for developing an advanced explosives detector is described.

Energy Technology Data Exchange (ETDEWEB)

There are certain factors to take into account when determining the suitability of a healthy house site. Power lines, agricultural spraying, vehicle exhaust, and industrial pollution are all potential sources of indoor air contamination. It is recommended that a environmental assessment be done to determine whether there are specific sources of contamination. Good drainage is required. The surrounding landscaping should be open and sunlit, and with low maintenance requirements. Decks and fences made from pressure-treated or chemical treated lumber should be avoided. One of the early decisions in the design process is the choice of the structural system. The key with all foundation types is to control moisture, whether from rain, from the ground, or the condensation of moisture from the air with cooling. The construction frame is sealed away from the occupants by the air/vapor barrier, so only in extreme cases is it essential to use alternatives to softwood lumber ...

Science.gov (United States)

Feb 15, 2008 ... hydrological properties (e.g., hydrometeor budgets, cloud ice/water, transports ... cloud fraction, mass and particle size. In combination, these .... anomaly in the LS is not simply due isentropic movement of water vapor relative ...

Energy Technology Data Exchange (ETDEWEB)

The chemical operational concept originally established for the water-steam circuit of Angra II nuclear power plant has undergone several modifications throughout the development of the project. This work discusses the two main modifications giving special attention to the costs involved and analyses the main points and the consequences of such modifications 1 ref., 4 figs., 2 tabs.

DEFF Research Database (Denmark)

The thermodynamic framework that was developed in a previous work [Vrachnos et al. Ind. Eng. Chem. Res. 2004, 43, 2798] for the description of chemical and vapor-liquid equilibria of carbon dioxide, hydrogen sulfide, and their mixtures in aqueous methyldiethanolamine (MDEA) solutions is revised and extended in this study to the absorption of carbon dioxide into aqueous monoethanolamine (MEA) solutions and aqueous MDEA-MEA blends. The results of the model are compared with experimental data taken from the literature. Very satisfactory predictions of acidic gas vapor-liquid equilibrium over MDEA, MEA, and their blends at various concentrations, acidic gas loadings, and temperatures are obtained.

Energy Technology Data Exchange (ETDEWEB)

The production of polarized negative ion beams by collisional pumping is described. Collisional pumping utilizes repeated charge changing collisions in a thick electron-spin-polarized gas or vapor target to form a polarized fast atom beam. The polarized fast atom beam is then partially converted into a polarized negative ion beam in a vapor target. Analysis is presented for a hydrogen beam passing through either a thick polarized H atom target or a thick polarized alkali target. Large polarizations and large currents may be possible.

Science.gov (United States)

Plasma generated in low-density vapor by a negative ion beam has been studied experimentally and computationally. We show that space charge neutralization of the beam occurs at very low vapor density, and that correspondingly the electron density may be much less than the beam and plasma ion densities. When there is a large local gas density, as in a charge changing cell, the resulting high electron density is also localized to the same region. Therefore, very few electrons will reach a negative ion accelerator even if it is placed one or two beam diameters from such a cell.

International Nuclear Information System (INIS)

A thermodynamic model was used to estimate enthalpy of solution of carbon dioxide (CO_2) in methyldiethanolamine (MDEA) aqueous solutions. The model was based on a set of equations for chemical equilibria, phase equilibria, charge, and mass balances. Non-ideality in the liquid phase was taken into account by interaction parameters fitted to (vapor + liquid) equilibrium data. The enthalpies of solution of CO_2 were derived from the model using classical thermodynamic relations and were compared to experimental values obtained in previous works.

Energy Technology Data Exchange (ETDEWEB)

In this paper the diffusion of tritiated water vapor into concrete walls is studied to evaluate tritiated water retention capacity of a fusion reactor concrete building. Using a model of the tritiated water diffusion determined form experimental results, depth profiles of tritiated water in concrete are calculated in the case of being exposed to air containing tritiated water vapor during the normal operational condition of a fusion reactor. A 0.5-m-thick concrete is sufficient for reactor hall walls from a viewpoint of the tritium containment.

Energy Technology Data Exchange (ETDEWEB)

The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal ...

Science.gov (United States)

Analytical relations are obtained for estimating how the distributions of temperature and heat flux vary along a steam-generating tube and how the steam-generator power output reduces due to formation and accumulation of deposits.

Science.gov (United States)

This report results from a contract tasking Eindhoven University of Technology as follows: The contractor will investigate the plasma treatment of surfaces and plasma enhanced deposition using EUT's cascade arc source as the basis for this effort.

International Nuclear Information System (INIS)

... 194 p. auger electron spectroscopy decomposition deposition interfaces oxygen

International Nuclear Information System (INIS)

Adult and newborn rats were exposed to "2"3"9PuO_2 aerosols of four different size distributions. Rats of both ages were killed at intervals between 1 hr and 60 days postexposure. There were marked age- and particle-related size differences in deposition, although retention was similar throughout. The differences in deposition are attributable to relatively greater deposition of larger particles in the upper respiratory tracts of newborns.

Energy Technology Data Exchange (ETDEWEB)

A compact cesium deposition system was used for direct deposition of cesium atoms and ions onto the inner surface of the 1/3 scale Hydrogen Negative Ion Source for the LHD-NBI system. A small, well defined amount of cesium deposition in the range of 3-200 mg was tested. Negative ion extraction and acceleration were carried out both in the pure hydrogen operation mode and in the cesium mode. Single Cs deposition of 3-30 mg to the plasma chamber have produced temporary 2-5 times increases of H-yield, but the yield was decreased within several discharge pulses to the previous steady-state value. Two consecutive 30 mg depositions done within a 3-5 hours/60 shot interval, produced a similar temporary increase of H-beam, but reached a larger H-yield steady-state value. Deposition of larger 0.1-0.2 g Cs portions with a 20-120 hours/150-270 shot interval improved the ...

Energy Technology Data Exchange (ETDEWEB)

The question about expanding the boundaries of the open pit mining method is examined. The use of methods which consider the advantages of open and underground mining operations with their joint use in horizontal and evenly dipping deposits will make it possible to objectively select the mining method, to expand the range of use of open pit mining operations in the deposits of the Far North and provide an improvement in the technical and economic indicators of mineral extraction.

Energy Technology Data Exchange (ETDEWEB)

This report measured the rate of isothermal deposition of sub-micron particles of magnetite onto the surface of Alloy 800 at pH of 4.2-9.3 at Re=10,000 and a fluid temperature of 25C. Deposition is modelled as a two-step process, the transport of particles to the surface region followed by attachment to the surface.

Energy Technology Data Exchange (ETDEWEB)

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min{sup -1}. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The {beta}-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry ...

Energy Technology Data Exchange (ETDEWEB)

Crystalline MnMoO{sub 4} was synthesized using a conventional solid reaction method and investigated for its physical and electrochemical properties as an anode material for Li secondary battery. The reversible amount of Li insertion/removal of MnMoO{sub 4} anode during the first cycle was about 800 mA h/g, accompanied by irreversible structural transformation into amorphous material. The amorphization during the first Li insertion was investigated by structural analysis using XRD of electrode. The charge compensation during Li insertion/removal was examined by measurement of X-ray Absorption Near Edge Structure (XANES) spectroscopy. Despite its irreversible structural transformation to amorphous during the first lithiation, subsequent cycles showed a reasonable cyclability. This paper presents the electrochemical properties of MnMoO{sub 4} and discusses the mechanism underlying the Li insertion/removal process.

Energy Technology Data Exchange (ETDEWEB)

The distribution of activation energies ..delta.. for classical over-the-barrier hopping is computed for a model amorphous metal. The spread in ..delta.. is determined by the variation in equilibrium-site and saddle-point sizes for the assumed model of dense random packing (DRP) of soft spheres. The size distribution is related to the radial distribution function in a manner which reproduces recent numerical results for the interstitials in DRP models. Size (distance) variation in general is related to energy variation by the form of the potential energy V(r). We show, however, that the distribution of equilibrium-site energies can be related directly to the impurity-induced lattice expansion and bulk modulus without detailed knowledge of V(r). The form of V(r) is necessary for the saddle-point distribution, and we estimate this using simple analytic expressions which fit the observed lattice expansion and impurity (hydrogen) vibrational frequency. The effects of a ...

Energy Technology Data Exchange (ETDEWEB)

In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, ...

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

Energy Technology Data Exchange (ETDEWEB)

In-situ TEM investigations during thermal treatment of amorphous Pd{sub 81}Si{sub 19} have been performed. It was found that crystalline nuclei are formed near the perforation edge of the hole produced by electrochemical polishing. After impinging with neighboring crystals, a crystallization front formed which was aligned parallel to the perforation edge. The crystallization front moved in the direction perpendicular to the perforation edge. Crystal growth was found to proceed faster in thinner parts of the specimen than in thicker parts. The results are described qualitatively within a thermodynamic model taking into account volume-, surface- and interfacial free energies and an appropriate specimen geometry.

Energy Technology Data Exchange (ETDEWEB)

Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.

Energy Technology Data Exchange (ETDEWEB)

The transformation from the as-quenched amorphous to the crystalline state in Fe/sub 78/B/sub 13/Si/sub 9/ alloy has been investigated using a new-type neutron diffractometer. The time resolved diffraction patterns clearly show that this alloy crystallizes into FeSi alloy and Fe/sub 2/B in that order. The time evolution of these crystalline phases can be analyzed by the Kolmogorov-Johnson-Mehl-Avrami equation with the exponent of about 2.5 over a wide temperature range. This suggests that the crystallization occurs by the diffusion-controlled growth with a constant nucleation rate. The scaling behavior in the crystallization kinetics is also discussed.

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

International Nuclear Information System (INIS)

By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).

International Nuclear Information System (INIS)

Understanding the erosion and deposition rates in a small watershed is important for designing soil and water conservation measures. The objective of this study is to estimate the net soil loss and gain at points with various land use types and landform positions in a small watershed in the Sichuan Hilly Basin of China by the 137Cs tracing technique. Among various land use types, the order of erosion rate was bare rock > sloping cultivated land > forest land. The paddy field and Caotu (a kind of cultivated land located at the foot of hills) were depositional areas. The erosion rate under different landform was in this order: hillside > saddle > hilltop. The footslope and the valley were depositional areas. The 137Cs technique was shown to provide an effective means of documenting the spatial distribution of soil erosion and deposition within the small watershed.

Energy Technology Data Exchange (ETDEWEB)

A model is described for simulating thermal hydraulic and chemical conditions within fuel crud deposits. Heat transfer takes place by wick boiling in which water flows through the porous deposit and evaporates into steam at the surface of chimneys. The transport and chemistry of dissolved species within the deposit is also modelled. This chemistry includes the equilibrium chemistry of Li/boric acid species, the equilibrium chemistry of Fe/Ni species and the radiolysis chemistry of water. The unique feature of this model is that the chemistry is coupled to the thermal hydraulics via the increase in the saturation temperature with the concentration of dissolved species. This has a profound effect on evaporative heat transfer within thick deposits, leading to conditions that explain the precipitation of LiBO{sub 2} and the possible formation of bonaccordite. The model helps understand several crud scrape ...

International Nuclear Information System (INIS)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO_2 substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio I(111)/I(200) reaches its maximum value indicating a strong left-angle 111 right-angle texture, while the impurity concentration and resisitivity are minimum. The correlation ...

Science.gov (United States)

Ion bombardment during deposition can significantly modify the film properties. In the partially ionized beam deposition, ions derived from the depositing material, i.e., the self-ions, are used during deposition. Cu films were deposited on SiO{sub 2} substrates at room temperature using 1% Cu self-ions with an energy ranging between 0--4 keV. We studied the microstructures of the Cu films using x-ray diffraction and transmission electron microscopy, measured the impurity level inside the films using secondary ion mass spectrometry, and performed the resistivity measurements using a four point probe. The results indicate that there is an optimum ion energy around 2 keV at which, the integrated x-ray intensity ratio {ital I}(111)/{ital I}(200) reaches its maximum value indicating a strong {l angle}111{r angle} texture, while the impurity concentration and resisitivity are minimum. ...