Energy Technology Data Exchange (ETDEWEB)

In these years Information Technology has been used in activities that require an intelligent intervention. In this context take placing Decision Support Systems, since they use Information Technology to support users in decision processes, that is problems of logical level greater then problems normally treated by traditional information systems. The purpose of this work is to describe Decision Support Systems specifying what they are, their functionally and structure, identifying, furthermore, user types referred to and interaction modality between them; and to present a prototype of these systems. From a preliminary analyses phase of ENEA being and its Information Systems to understand which topics can be supported by systems of this type, it deals with one of these topics: weighing of new project, finding parameters, or key quantity, that affect and determine decisions. It describes, then, models, conceived form parameters, that permit to the user, through a simple representation ...

Energy Technology Data Exchange (ETDEWEB)

CT-guided fine needle aspiration biopsy (FNAB) is known to improve diagnosis of expansive abdominal lesions, especially relative to more invasive procedure like explorative laparotomy. FNAB in not commonly use in pediatric patients because of their poor collaboration and of associated risks. The authors investigated the feasibility of FNAB in the pediatric age. [Italian] Sono noti i vantaggi che la biopsia percutanea con ago sottile guidato con TC puo' apportare per la diagnosi delle lesioni espansive addominali, soprattutto se confrontata con procedure piu' invasive come la laparatomia esplorativa. Questo tipo di metodica e' attalmente poco utilizzato nel caso di pazienti pediatrici a causa della scarsa collaborazione e dei rischi associati. Gli autori valutano l'applicabilita' di tale procedura nell'eta' pediatrica alla luce delle propria esperienza.

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Historically the organizational models have followed an evolution that has underlined a parallel trend to the complexity of the market, introducing as different mechanisms of coordination. Up to yesterday the winning model it was that hierarchical that however it is not certainly immune from limits. Beginning from eight hundred and especially in the nine hundred experts of organization have studied an alternative or supplementary model to that hierarchical: the bureaucratic model. This last entrusts the organization of the firm to the norms and the procedures considering them like the best integrating mechanism of development of the organizations. Today it is not made that to speak of the model to net, but it would be a serious error if this had to a substitutive model thought of the precedents, that can work then without hierarchy and without alone procedures entirely thanks to the use of Internet. In the present job are individualized new models of management of the private firms and ...

Energy Technology Data Exchange (ETDEWEB)

The aim of this work is to provide a comprehensive and consistent description of the complexity of laws regulating the field of biotechnology, mainly focusing on the definition of items to be patented, which is one of the most important and also controversial issues within the new 98/44/EC set of rules. As biotechnology is a specialist and multidisciplinary field, it has begun by giving a general description of the field, outlining the grounds for the new rules, and then thoroughly examined and evaluated previous national and international laws especially with regard to patenting. This was followed by an evaluation of what can be patented according to the new instructions by systematically assessing the section defining items to be patented in the field of biotechnology. It is used to be a matter of opinion whether biotechnological material was to be considered a discovery or an invention, the former being impatentable according to patenting laws. The new law pays particular attention ...

Energy Technology Data Exchange (ETDEWEB)

Purpose: Cardiomyopathy is one of the major complications of {beta} thalassaemia major as a result of transfusion iron overload. The aim of our study is to evaluate with MR if there is any difference of iron deposition signal intensity (SI) or distribution between non-cardiopatic and cardiopatic thalassaemic patients in order to establish if there is a relationship between cardiopathy and iron deposition. Materials and methods: We studied 20 patients affected by {beta} thalassaemia major, of whom 10 cardiopatic and 10 non-cardiopatic, and 10 healthy volunteers as control group. Serum ferritin and left ventricular ejection fraction were calculated in thalassaemic patients. All patients were examinated using a 1.5 MR unit with ECG-gated GE cine-MR T2*-weighted, SE T1-weighted and GE T2*-weighted sequences. In all cases, using an adequate ROI, the myocardial and skeletal muscle signal intensity (SI), the myocardial/skeletal muscle signal intensity ...

Energy Technology Data Exchange (ETDEWEB)

Rectus sheath hematomas are a frequent but sometimes misdiagnosed disease in patients under anticoagulative drugs, hemodialysis, or simply in the elderly. The most frequent localization is in the lower part of the abdomen: the explanation lies in the anatomy of the abdominal wall, especially in the arcuate line of the rectus sheath. Aim of this work is to explain the reason of the almost constant location correlating the anatomy with the CT features. The rectus abdominis muscle lies between the aponeuroses of the transverse and oblique muscles which form the so called rectus sheath. This arrangement is found from the costal arch to a level approximately between the umbilicus and the pubic symphisis, where the rear layer of the rectus sheath ends with a curved edge, called the arcuate or semicircular line of Douglas. Beneath this line the aponeuroses of the three muscles pass in front of the rectus which is separated from the peritoneum only by the fascia trasversalis, a thin connective ...

Energy Technology Data Exchange (ETDEWEB)

Aim of this retrospective study was to assess the capability of contrast-enhanced helical computerised tomography (CT) in sigmoid diverticulitis, especially relative to selection of the appropriate treatment. The findings of 41 patients were reviewed from 1998 to 1999 June. Contrast-enhanced helical CT is the imaging modality of choice in assessing mild or severe acute diverticulitis because it provides useful information for appropriate treatment planning in the emergency setting. This technique is most useful in questionable cases and in patients with suspected severe diverticulitis where a choice must be made between different treatment options. [Italian] Scopo di questo studio retrospettivo e' illustrare i molteplici aspetti radiologici della flogosi diverticolare sigmoidea con tomografia computerizzata (TC) spirale, con specifico riguardo alle implicazioni terapeutiche che scaturiscono dall'analisi e dal confronto dei reperti TC con i ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

The study reports ultrasonography and computerise tomography findings in 16 patients with amoebic abscesses, 12 of whom lived in a temperate peripheral area north-east of Naples (Italy). All patients have a clinical-diagnostic condition called sub-urban amoebiasis. The personal experience with the US guided therapeutic drainage of amoebic abscess with repeated cavity washing, which is important for positive parasitology. Combined US and CT assessment facilitated the diagnosis of amoebiasis and its differentiation from pyogenic abscess and hepatoma. [Italian] La colonizzazione epatica rappresenta la localizzazione piu' comune dell'amebiasi extraintestinale e gli ascessi epatici ne costituiscono la manifestazione piu' frequente sviluppandosi nel 3-9 % dei pazienti affetti da infezione parassitaria. Diversi studi confermano che la terapia medica dell'amebiasi risulta piu' efficace quando viene associato il drenaggio ...

CERN Document Server

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO 2 Substrates

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi/sub 2/ was formed on amorphous Si substrates at 350 /sup 0/C, while NiSi remained stable on crystalline Si substrates even at 400 /sup 0/C. PtSi reacted with Si to form a metastable Pt/sub 4/Si/sub 9/ phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt/sub 4/Si/sub 9/ was easier on crystalline Si substrates than on amorphous ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of this paper is to report the personal experience with helical CT evaluation of hepatocellular carcinoma treated with various percutaneous interventional procedures. From December 1996 to September 1998 it were examined with helical CT 41 patients (73 nodules in all) with hepatocellular carcinoma treated with percutaneous ablation therapies: conventional ethanol injection in 18 subjects (31 nodules), one-shot ethanol injection 3 (8 nodules), radiofrequency thermal ablation in 16 (25 nodules), and combined chemo embolization and ethanol injection in 4 (9 nodules). CT performed was 4-27 days after the last session, acquiring biphasic volumetric images in 14 patients and triphasic volumetric images in 27. A second treatment with subsequent CT study was performed for 28 lesions; 15 underwent 3 serial studies and 6 underwent 4 studies. Compared with pretreatment findings, the diameter was unchanged in 62% of the nodules and increased in 38%. Morphology was unchanged in 63% of ...

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

Energy Technology Data Exchange (ETDEWEB)

The electrical transport taking place in the {mu}c-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO{sub 2} plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic {mu}c-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n){mu}c-Si/oxide/(p){mu}c-Si and (b) (n){mu}c-Si/(i){mu}c-Si/(p){mu}c-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) {mu}c-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies ...

British Library Electronic Table of Contents (United Kingdom)

The tribological properties of gas pressure sintered SiAlON and its composite with 18wt% silicon carbide (SiC) against two different mating materials, i.e., alumina and SiAlON are evaluated. SiAlON and SiAlON-18%SiC composite ceramics were prepared by pressure less sintering and gas pressure sintering. Fretting wear tests were carried out under dry unlubricated ambient conditions (room temperature 23-25^oC; relative humidity 50-55%) with a load of 8N for 45,000 cycles. Friction and wear properties of SiAlON-SiC proved better than the monolithic SiAlON. The formation of silica roll like structure on the composite worn surface was observed.

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

International Nuclear Information System (INIS)

SiSiC is one of selected materials for the thermal chemical hydrogen production IS (Iodine-Sulfur) process at JAERI. SiSiC was tested in boiling sulfuric acid for 1000 hours. The obtained results showed the following facts. The transverse strength was not changed by sulfuric corrosion, high temperature oxidation and oxidation. Silica scale formed on SiSiC by sulfate corrosion and high temperature oxidation had corrosion resistance in boiling sulfuric acid. Bilayer structure of silica scale produced by high temperature oxidation was not affected by sulfate corrosion. (S.Y.).

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

Science.gov (United States)

The authors have presented results of an investigation of wettability of SiC particulates by liquid alloys of the Al-Si-Mg system. The evaluation of wetting has been carried out through the determination of the threshold pressure for infiltration of packed SiC particulates by the liquid alloy. The results indicate that whereas Si and Mg additions do not affect wetting, in the case of the ternary alloys the contact angle decreases in an amount proportional to the content of Mg[sub 2]Si.

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during ...

Energy Technology Data Exchange (ETDEWEB)

The surface of Si and thin layers of Pd{sub 2}Si on Si have been studied by low-energy He{sup +} ion scattering. The occurrence of the observed low-energy tails is attributed to reionization at the surface of He neutrals scattered from subsurface layers. It is shown that the tails provide in-depth information. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The effects of repeated low-level nerve agent exposure on animal performance and lethality are a major concern of USAF Medical Research. This concern has generated interest in the role that pretreatment drugs such as pyridostigmine may play during simultaneous exposure to soman. This role was investigated by recording lethality, weights, symptoms, and cholinesterase (ChE) inhibition in rats chronically exposed to 4 levels of soman (32, 39, 48 or 59 micrograms/kg/day) while simultaneously receiving 10.0 milligrams/kg/day pyridostigmine, 1.0 milligrams/kg/day pyridostigmine, or vehicle via an osmotic pump. No effect (either protective or detractive) was found in the soman-poisoned animals due to the presence or absence of pyridostigmine. However, rat blood biochemistry is different from that of the primate, warranting further study in the primate before extrapolation to man.

British Library Electronic Table of Contents (United Kingdom)

Fitness, (biometric measurements, reproduction) and behaviour that are ecologically relevant biomarkers in assessing the quality of estuarine sediments were studied by comparing the responses of the polychaete worm Nereis diversicolor - a key species in estuaries - along a pollution gradient. Intersite differences were shown for all the measured parameters: size-weight relationships, energy reserves as glycogen and lipids, sexual maturation patterns, total number of oocytes per female, total and relative fecundity, burrowing behaviour. The physiological and behavioural status of N. diversicolor was consistently disturbed in the larger, most contaminated estuaries (Loire and Seine, Fr.) compared to reference sites (Bay of Bourgneuf, Goyen estuary, Fr.). Many classes of potentially toxic che...

UK PubMed Central (United Kingdom)

Effective small interfering RNA (siRNA)–mediated therapeutics require the siRNA to be delivered into the cellular RNA-induced silencing complex (RISC). Quantitative information of this essential...Full Text Available

Science.gov (United States)

and palladium silicides (Pd,Si) with a total. AES intensity ratio of Pd to Si of 35/65. Scanning Electron Microscopy. (SEM') of the Pd region shows that ...

Energy Technology Data Exchange (ETDEWEB)

The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO/sub 2/, Si/sub 3/N/sub 4/ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si/sub 3/N/sub 4/, but SiO/sub 2/ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO/sub 2/ and Si/sub 3/N/sub 4/ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the ...

International Nuclear Information System (INIS)

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A 'blue'-shift of PL spectrum from the SiO_2 films implanted with Si"+ ions to total dose of 1.2x10"1"7 cm"-"2 with increase in hydrostatic pressure was observed. For the films implanted with Si"+ions to a total dose of 4.8x10"1"6 cm"-"2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

International Nuclear Information System (INIS)

Single-crystalline CeRh_2Si_2 and CePd_2Si_2 were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce"3"+ ion and the surrounding ligands in CeRh_2Si_2 turned out to be strong and highly anisotropic in comparison to CePd_2Si_2. (orig.)

International Nuclear Information System (INIS)

... low temperature moessbauer effect palladium silicides thulium silicides thulium

International Nuclear Information System (INIS)

We have investigated the superconducting and metallurgical properties of the ternary compounds RPd_2Si_2 and RRh_2Si_2 with R = Y, La, and Lu. All RPd_2Si_2 compounds and LaRh_2Si_2 were found to be type-I superconductors below 1 K. A detailed metallurgical analysis shows that segregation of second phases can easily mask the intrinsic (stoichiometric ratio 1:2:2) intermetallic-compound properties. Two sample-preparation techniques, viz., single crystals and off-stoichiometry, were utilized to establish where bulk superconductivity occurs. The type-I behavior of these compounds is explained with an analogous model as is used for the heavy-fermion superconductors CeCu_2Si_2 and URu_2Si_2.

International Nuclear Information System (INIS)

Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial ...

International Nuclear Information System (INIS)

... magnetic susceptibility magnetization monocrystals neutron diffraction

International Nuclear Information System (INIS)

Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO_2 buffered layer is investigated. The Ni nanodots can hardly self-aggregate on highly heat-dissipated Si substrate with a thermal conductivity of 148 W/m K. Adding a 200-A-thick SiO_2 buffer with an ultralow thermal conductivity of 1.35 W/m K prevents the formation of NiSi_2 compounds, enhances the heat accumulation, and releases the adhesion at Ni/Si interface, which greatly accelerates the self-assembly of Ni nanodots. Dense Ni nanodots with size and density of 30 nm and 7x10"1"0 cm"-"2, respectively, can be formatted after rapid thermal annealing at 850 deg. C for 22 s.

Energy Technology Data Exchange (ETDEWEB)

High-field magnetization properties of single crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were investigated. Two-step metamagnetic transition (H{sub c1}=25.4 T and H{sub c2}=26.0 T) was observed in the case of CeRh{sub 2}Si{sub 2}, whereas no anomaly was found in the magnetization process of CePd{sub 2}Si{sub 2} up to 28 T. The mean field analysis has shown that CeRh{sub 2}Si{sub 2} is quite anisotropic compared to CePd{sub 2}Si{sub 2}, which results in the sharp contrast between the magnetization processes of the two compounds.

Energy Technology Data Exchange (ETDEWEB)

Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the ...

Energy Technology Data Exchange (ETDEWEB)

FeSi{sub 6}/graphite composite was prepared by mechanical ball milling. The FeSi{sub 6} alloy particles consist of an electrochemically active silicon phase and inactive phases FeSi{sub 2}, distributed uniformly in the graphite matrix. The composite anode offers a large reversible capacity (about 800 mAh g{sup -1}) and good cycleability, due to the buffering effect of the inactive FeSi{sub 2} phase and graphite layers on the volumetric changes of Si phase during lithium-Si alloying reaction. Since FeSi{sub 6} alloy is a low-cost industrial material, this alloy compound provides a possible alternative for development of high capacity lithium-ion batteries. (author)

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex ...

Energy Technology Data Exchange (ETDEWEB)

Nuclear magnetic resonance is a powerful technique that can be used in a wide range of applications, such as the structural characterization of high molecular weight molecules, conformational studies on enzymes in solution, enzyme-substrate or DNA-protein interactions, monitoring of cell metabolism in vivo, and for diagnostic purposes, employing spectroscopic and imaging techniques. This course was organized in order to introduce the participants to the fundamentals of NMR spectroscopy, and offer practical advice on performing NMR experiments on cell systems, cell and tissue extracts and animal models. The main implications regarding human experiments were also discussed. Finally the quantification of information and the interpretation of data were considered with regard to the main nuclei observed. [Italiano] La risonanza magnetica nucleare e` una delle tecniche spettroscopiche che meglio risponde all`ampio spettro di condizioni imposto dalla ricerca in biofisica ...

International Nuclear Information System (INIS)

Synthesis of Eu-doped #beta#- and 15R-SiAlONs was studied by the ammonia nitridation of precursors derived from an #alpha#-Si_3N_4 fine powder dispersed in aluminum glycine gel with various Si/Al ratio and post-annealing in a nitrogen pressure furnace. The largest amount of #beta#-SiAlON was observed in the product at 1750 deg. C for Si/Al = 1/1 with small amounts of both #alpha#- and 15R-SiAlON impurities. The product showed two emissions at around 420 nm and 560 nm. The emission intensities decreased with increasing amount of #beta#-SiAlON. The former and latter emissions were assigned to Eu"2"+ in the 15R- and #alpha#-SiAlONs impurities. A mixture of Eu-doped 15R-SiAlON with #alpha#-Al_2O_3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO_3)_3.9H_2O in a ...

International Nuclear Information System (INIS)

The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in ...

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. The size of He bubbles in the fiber was slightly increased by ...

International Nuclear Information System (INIS)

"2"7Al and "2"9Si solid-state NMR spectra and X-ray diffraction (XRD) patterns were obtained for #alpha#-SiAlON powders prepared by combustion synthesis, according to which the phase transformation and structure evolution of #alpha#-SiAlON were studied. It was found that in #alpha#-SiAlON "2"9Si chemical shift values (-48 < #delta# _S_i < -47) were close to those in #beta#-Si_3N_4 and #alpha#-Si_3N_4, indicating that Si atoms kept SiN_4 coordination to a large extent in #alpha#-SiAlON despite the presence of O atoms. Dissimilarly, "2"7Al chemical shift values in #alpha#-SiAlON deviated clearly from that corresponding to AlN_4 coordination (#delta# _A_l #approx# 112) and occurred in a range from #delta# _A_l 95.5 to 99.9, which ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

In Ce(Ru{sub 1-x}Pd{sub x}){sub 2}Si{sub 2} the dilution of the transition metal leads to strong electronic effects resulting in the disappearance and the appearance of long-range magnetic order in CePd{sub 2}Si{sub 2} and CeRu{sub 2}Si{sub 2}, respectively. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

The Si L/sub 2/ /sub 3/VV Auger Lineshape for Pd/sub 4/Si was measured and found to be in good agreement with the self-fold of the Si partial density of states model calculated by Riley et al. Oxygen chemisorption altered both the Auger lineshape and the HeI photoemission spectrum, especially near the Fermi energy.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... chemical reactions high temperature lattice parameters microhardness

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion ...

Science.gov (United States)

We report results of measurements and analysis of the heat capacity of MnSi. The measurements included data collection at a magnetic field of 4T, which suppresses strongly the longitudinal spin fluctuations and the phase transition. To analyze the experimental data, calculations of the phonon spectrum and phonon density of states in MnSi were performed. Inelastic neutron scattering with a polycrystalline sample of MnSi was used to validate the computational results. The combination of the experimental and theoretical data turned out to be decisive in revealing some hidden features of the thermal excitations in MnSi. In particular, the analysis of the available data led conclusively to the existence of a negative contribution to the heat capacity and entropy in MnSi at T>Tc, implying that a specific spin ordering process did occur in the paramagnet phase of ...

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

International Nuclear Information System (INIS)

The compounds CePdSi_2, CeIrSi_2 and CeRhSn_2 have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi_2 exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi_2 shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn_2 remains paramagnetic down to 5 K. The resistivity of CeIrSi_2 exhibits a T"2 dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi_2 and CeRhSn_2 shows the presence of Kondo and crystal field effects. (orig.).

International Nuclear Information System (INIS)

#beta#-SiAlON was synthesized from a zeolite by NH_3 gas nitridation and its formation mechanism was investigated using X-ray diffraction and "2"9Si and "2"7Al NMR spectroscopy. It was revealed that most of the Si and Al atoms react to form #beta#-SiAlON via amorphous forms of Si-Al-O-N and O-SiAlON. Nitridation using NH_3 gas is an effective means of preventing mullite formation and promoting the introduction of nitrogen into aluminosilicate materials at lower temperatures than temperatures required by the carbothermal reduction nitridation process. Further, the NMR spectra showed that the siliceous part of the system changed into low z-value of Si_6_-_zAl_zO_zN_8_-_z (#beta#-SiAlON) and the incorporation of Al components into the #beta#-SiAlON was promoted in the later stages of the reaction. ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from ...

International Nuclear Information System (INIS)

Sialons are phases in the Si-Al-O-N and M-Si-Al-O-N systems where M includes Li, Mg, Ca, Sc, Y and the rare earth elements. They are comparable in variety with the mineral silicates and are built up of one-, two-, and three-dimensional arrangements of (Si,Al)(O,N)/sub 4/ tetrahedra in the same way that the structural units of the silicates are SiO/sub 4/ tetrahedra. These new materials include N-containing ceramics, glasses and glass-ceramics that are being explored for their thermal, chemical and physical properties.

British Library Electronic Table of Contents (United Kingdom)

Palladium silicide was formed on the sol-gel derived SiO2 supported Pd catalysts prepared by ion-exchange method (Pd/SiO2-SG-ion). However, the catalysts exhibited superior performances than commercial SiO2 supported ones in liquid-phase semihydrogenation of phenylacetylene. It was probably due to an inhibition of a product of styrene, which is adsorbed on the surface of Pd, more strongly on Pd/SiO2-SG in which Pd is electron-deficient as shown by larger binding energy from XPS results.

Science.gov (United States)

The title compounds were prepared by arc-melting of the elemental components. Whereas NdPdSi and SmPdSi are already present after the arc-melting, alpha-GdPdSi and alpha-TbPdSi are formed only during the annealing at 800 degC. The four compounds crystallize with the recently reported alpha-YbAuGe type structure, which was refined for alpha-GdPdSi: Pnma, a=2108.0(4) pm, b=433.9(1) pm, c=745.6(1) pm, Z=12, R=0.026 for 1447 structure factors and 62 variable parameters. The lanthanoid atoms are situated between two-dimensionally infinite nets of condensed, puckered hexagons formed by alternating palladium and silicon atoms, with Pd-Si distances varying between 251 and 262 pm. In the third dimension these nets are linked via weak Pd-Pd (300 pm), Pd-Si (283 pm), and Si-Si bonds (261 pm). The refinements of the occupancy ...

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for ...

International Nuclear Information System (INIS)

Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along (110) and (100) channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs ...

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports some technical contributes related to the Kyoto Protocol and its application in Italian decision making policy. [Italian] Il presente volume raccoglie una decina di contributi tecnici originariamente preparati o commissionati dall'ENEA, Ente Nazionale per le Nuove Tecnologie, l'Energia e l'Ambiente, in vista della Conferenza Nazionale Energia e Ambiente. Questa fotografia di una situazione in rapida evoluzione e' stata preparata da esperti del settore che contribuiscono a redigere il materiale tecnico di base utilizzato dai negoziatori nazionali durante le trattative internazionali e dai responsabili nazionali per avviare il processo di presa di decisioni in materia.

Energy Technology Data Exchange (ETDEWEB)

The diagnostic imaging findings in hepatic amoebiasis and the capabilities of percutaneous drainage have already been described but some debate is open on both diagnosis and treatment. It is reported the experience with the ultrasound (US) and Computed Tomography (CT) studies of the hepatic amoebic abscess and its management. [Italian] I reperti con diagnostica per immagini nell'amebiasi epatica e le possibilita' del drenaggio percutaneo sono stati gia' illustrati; esistono tuttavia controversie sul piano sia diagnostico che terapeutico. Obiettivo di questo lavoro e' quello di riportare l'esperienza personale nella diagnostica con ecografia e tomografia computerizzata (TC) e nel trattamento degli ascessi amebici del fegato.

Energy Technology Data Exchange (ETDEWEB)

After a short review of the classical simplified expressions able to evaluate the seepage path in the core of a river levee, this paper first discusses the results obtained assuming the Dupuit approximation. Dimensionless nomographs are then showed, obtained by means of numerical integration of the seepage equations, These nomographs allow a quick levee design to be developed, after the definition of flood hydrography, seepage and embankment characteristics. [Italian] Dopo un sintetico richiamo di alcune classiche formulazioni semplificate per la determinazione dell'andamento della linea di infiltrazioner in un rilevato arginale, nell'articolo vengono presentati e discussi i risultati conseguiti prima assumendo la sola ipotesi di Dupuit e, successivamente, risolvendo l'equazione completa del moto di filtrazione. In particolare, vengono forniti abachi adimensionali che consentono, una volta fissate le caratteristiche ...

International Nuclear Information System (INIS)

Monolithic SiAlON ceramics are hard and brittle with little possibility for property design, but multi-phase SiAlON ceramics offer great scope for controlling microstructural development and desired properties. The ceramics can also be reinforced by separate additions of other hard, refractory compounds. The toughness in all these SiAlON composites can be increased by several mechanisms, and the best effect is reached if they are combined. When glassy phase is present, crack paths are affected by the strains caused by different thermal expansion of the glassy phase and the crystals and also by the interface properties. The crystal shape influence toughness, especially pronounced is the effect of the elongated #beta#- grains. Different toughening mechanisms are achieved by separately added reinforcement phases. The hardness is raised by the presence of #alpha# SiAlON and other hard constituents, such as ...

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

Neutron diffraction and magnetometric measurements on polycrystalline samples of DyPd_2Si_2 and ErPd_2Si_2 were carried out in the temperature range from 2 to 293 K. Both compounds show tetragonal ThCr_2Si_2 type crystal structure and order at 12 K in a sine modulated magnetic structure with propagation vectors k=[0.609,0,0.155] and [0.575, 0, 0.083] respectively. The oscillatory character of magnetic order found in RPd_2Si_2 (R=Tb-Er) compounds suggests exchange interaction described by the RKKY model to be dominant, but the non-monotonic dependence of respective Neel temperatures on the number of f-electrons indicates the influence of a crystalline electric field (CEF) on the magnetic behaviour in this series. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.

Energy Technology Data Exchange (ETDEWEB)

The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.

International Nuclear Information System (INIS)

Nanocomposites comprising nanocrystal silicon (Si), disordered carbon (DC), and multi-walled carbon nanotubes (MWCNTs) - denoted as Si/DC/MWCNTs - have been prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with Si and MWCNTs. This nanocomposite anode material showed a discharge capacity of 1216 mAh/g in the first cycle, and a charge capacity of 711 mAh/g after 20 charge-discharge, much higher than that of Si/DC composite. It can be observed that Si particles wrapped in MWCNTs were homogeneously embedded into the matrix of the DC. The improved electrochemical performance is hypothesized to be mainly attributed to the morphology stability of the composite due to the excellent resiliency and distinct electric conductivity of the MWCNTs.

Energy Technology Data Exchange (ETDEWEB)

The new industrial political tools based on the sustainable development of productive activities, and originating at the Rio Conference in 1992, late introduced by the European Union, the Government and voluntary organizations (ISO, CEM, UNI) are gradually entering the market, thereby underling their effect in terms of industrial competitiveness. The main tools were examined in the report and mostly refer to the voluntary ones which, in surpassing the command and control logic, increasingly tend to get close to traditional fiscal, tariff and financial ones. Voluntary agreements, environmental management systems (EMAS, ISO14000), the risk prevention systems (UNI 10617), certification (Ecolabel, ISO 14040) and environment communications tools (environment balance sheet, environmental report, environmental statement) are synthetically described. Finally, the tools regarding the incentives still under Government concern an their diffusion are examined. [Italian] I nuovi strumenti di ...

Energy Technology Data Exchange (ETDEWEB)

Single photon emission computed tomography (SPECT) of lung perfusions permits to map functioning lung parenchyma with higher sensitivity than CT. Delivering higher radiations doses it used to increase local control in lung carcinoma; this strategy is based on radiobiological and clinical studies. Lung parenchyma is a dose-limiting tissue in patients irradiated for lung cancer. Functional mapping based on SPECT and CT findings permits to design radiation beams such as to minimize irradiation of functioning lung. [Italian] L'integrazione delle immagini diagnostiche aventi diverso contenuto informativo anatomico-funzionale puo' essere utilizzata nella radioterapia per migliorare le procedure diagnostiche e ottimizzare la geometria dell'irraggiamento. I sistemi per l'elaborazione di piani di radioterapia oggi in uso sono direttamente interfacciati con gli apparecchi di Tomografia Computerizzata (TC) e l'impiego di immagini provenienti da altre ...

International Nuclear Information System (INIS)

The nine title compounds were prepared from the elements by arc-melting and subsequent heat treatment in resistance and high-frequency furnaces. The crystal structure of these isotypic compounds was determined for YPdSi from single-crystal X-ray diffractometer data: Pmmn, a = 430.8(1) pm, b = 1391.2(1) pm, c = 743.1(1) pm, Z = 8, R = 0.024 for 417 structure factors and 40 variable parameters. The crystal structures of the isotypic compounds GdPdSi and ErPdSi were also refined from single-crystal data. The structure is of a new type. It consists of condensed, six-membered rings of alternating palladium and silicon atoms with Pd-Si bond distances varying between 249.6 and 258.8 pm. These two-dimensionally infinite nets are connected to each other via weak Pd-Si and Si-Si bonds with bond distances of 276.3 and 259.5 pm. The rare earth atoms are situated above and ...

Energy Technology Data Exchange (ETDEWEB)

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit ...

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated the superconducting and metallurgical properties of the ternary compounds RPd/sub 2/Si/sub 2/ and RRh/sub 2/Si/sub 2/ with R = Y, La, and Lu. All RPd/sub 2/Si/sub 2/ compounds and LaRh/sub 2/Si/sub 2/ were found to be type-I superconductors below 1 K. A detailed metallurgical analysis shows that segregation of second phases can easily mask the intrinsic (stoichiometric ratio 1:2:2) intermetallic-compound properties. Two sample-preparation techniques, viz., single crystals and off-stoichiometry, were utilized to establish where bulk superconductivity occurs. The type-I behavior of these compounds is explained with an analogous model as is used for the heavy-fermion superconductors CeCu/sub 2/Si/sub 2/ and URu/sub 2/Si/sub 2/.

Energy Technology Data Exchange (ETDEWEB)

Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd/sub 80/Si/sub 20/ films, we have studied the correlation between the hydrogen content and the resistivity.

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at ...

Energy Technology Data Exchange (ETDEWEB)

Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the ...

International Nuclear Information System (INIS)

The development of tough #alpha#-SiAlON with elongated grains in the last five years is summarized. This progress has been guided by the improved understanding of phase relations and nucleation/growth kinetics in SiAlON ceramics. Although most #alpha#-SiAlON compositions can be processed to contain some elongated grains, their microstructure, fracture toughness and R-curve behavior vary greatly. Such variability is due to the different phase stability of #alpha#-SiAlONs and the varying physical chemistry of the competing phases, including the transient/residual liquid. For this reason, microstructure control of #alpha#-SiAlON must pay close attention to the composition, starting powder and heating schedule. Seeding with single crystals of an appropriate #alpha#-SiAlON composition provides an attractive alternative that simplifies the task of microstructure ...

UK PubMed Central (United Kingdom)

Clinical applications of genetic therapies, including delivery of short, interfering RNAs (siRNAs) for RNA interference (RNAi), are limited due to the difficulty of delivering nucleic acids...Full Text Available

International Nuclear Information System (INIS)

A microwave-assisted carbothermal reduction and nitridation (CTR/N) method has been used for successful preparation of monophasic #beta#'-SiAlON starting from kaolinite and carbon black. Phase pure #beta#'-SiAlON has been obtained in under 60 min in microwave field. The z value of microwave prepared #beta#'-SiAlON is found to be 2.95, which is very close to the expected value from kaolinite composition. Formation of #beta#'-SiAlON has been monitored with XRD and MASNMR of "2"9Si and "2"7Al; the possible reaction mechanism has been discussed. Kaolinite to #beta#'-SiAlON conversion appears to be a very rapid single-step reaction under microwave irradiation. #beta#'-SiAlON powders have been microwave sintered to 98.7% of theoretical density in 30 min.

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

This document presents the current status of SiD's effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R&D needed to provide the technical basis for an optimised SiD.

International Nuclear Information System (INIS)

English 2006 2 p. Brazil Rocha, RM Centro Tecnico Aeroespacial, Sao

International Nuclear Information System (INIS)

Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si_3N_4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decrease, and the densification of the film increases. When the temperature is up to 360 degree C, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si_3N_4 films is also examined

Science.gov (United States)

A calorimeteric method for determining total hemispherical emittance of ... the standard deviation in the total hemispherical emittance value ...

International Nuclear Information System (INIS)

The magnetic susceptibility of the ternary compounds, RPd_2Si_2 (where R=Gd, Tb, Dy, Ho and Er) has been measured. GdPd_2Si_2 and TbPd_2Si_2 order antiferromagnetically at 13 and 20 K respectively; the rest of the compounds do not show clear ordering down to 4.2 K. Palladium carries no moment in these compounds. The De Gennes formula is not obeyed indicating that the exchange interaction between the 4f moments via conduction electrons is not isotropic. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The a.c. susceptibility and high field magnetization of TbRh{sub 2-x}Pd{sub x}Si{sub 2} and TbRu{sub 2-x}Pd{sub x}Si{sub 2} compounds were investigated up to 140 kOe. The (T, x) magnetic phase diagrams were determined. For both systems, an increase in the Pd content causes a decrease in the Neel temperature and changes the magnetization curves. (orig.)

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.

Science.gov (United States)

U3Si2. 7.885. -. 4.434. 275.7. PW. 7.870. -. 4.50. (6). Ce 3 Si 2. U3Si. 7.784. -. 4.312. 261.3. PW. 7.79. -. 4.36. (6). 7.805. 4.349 ...

International Nuclear Information System (INIS)

An alternative and graphical representation of the magnetic moment and the effective paramagnetic moment for polycrystalline Ce compounds with tetragonal site symmetry is described. The reduced moments can be calculated by means of standard perturbation theory. The calculated values deduced from the ground states of CeCu_2Si_2, CeRu_2Si_2, and CePd_2Si_2 polycrystals are compared with experimental magnetic moments.

International Nuclear Information System (INIS)

Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.

Energy Technology Data Exchange (ETDEWEB)

The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves ...

British Library Electronic Table of Contents (United Kingdom)

Direct visualization of rare earths in @a- and @b-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of @b-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in @a-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in @b-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.

Energy Technology Data Exchange (ETDEWEB)

The tribological behavior of SiSiC/100Cr6-, Si/sub 3/N/sub 4//100Cr6- und Al/sub 2/O/sub 3//100Cr6-pairs has been investigated with oscillating load on a spherical disc/disc tribometer. The prevailing wear mechanism of the Si ceramics is tribooxidation, which leads to the formation of a SiO/sub 2/ protective layer with a reduction in friction and wear. With frequencies >1 kHz, this effect increases, resulting in low friction coefficients and wear rates. The prevailing mechanism of the oxid ceramic is surface fatigue. The hard wear particles produce severe abrasive wear. This effect is intensified with higher frequencies.

Scientific Electronic Library Online (English)

Abstract in english Ru(1%)/SiO2 and Cu(1%)Ru(1%)/SiO2 catalysts were prepared by cogelation. The effect of pH and the amount of water on the physical-chemical properties and the catalytic properties of them were analyzed. The acid medium increased the formation of microporosity and the formation of small size of metallic ruthenium particle. The variation of the water quantity used in the gelation not modify considerably the texture neither the dispersion of the noble metal. The reduction lev (more) el of all prepared catalyst was similar, showing displacement in some of reduction peaks. The toluene hydrogenation indicated that the conversion and the quantity of hydrogenate product varied with the pH and the quantity of water used in the gelation. The addition of copper to Ru/SiO2 catalysts diminished the reactive conversion and their hydrogenant activity

Energy Technology Data Exchange (ETDEWEB)

The growth of thin Pd[sub 2]Si films on Si(111) surfaces is studied using [ital in] [ital situ] transmission electron microscope under ultrahigh vacuum conditions. No immediate reaction of deposited Pd with Si is observed at room temperature. At [similar to]200 [degree]C, uniform Pd[sub 2]Si films can be formed. The thin Pd[sub 2]Si films are found to grow into strained islands at elevated temperatures. Interfacial misfit dislocations associated with interfacial steps propagate across the strained islands, causing the islands to grow layer-by-layer at the interface. The strain fields associated with the misfit dislocations are believed to be responsible for this behavior.

International Nuclear Information System (INIS)

Low-porosity #alpha#- and #beta#-SiAlON composite material was prepared when the powder mixture intended for preparation of yttrium #alpha#-SiAlON, with the formula Y_0_._4Si_1_2_-_m_+_nAl_m_+_nO_nN_1_6_- _n, was attritor milled in isopropyl alcohol or contained excess oxygen (n > 0.6). The region of stability of single-phase yttrium #alpha#-SiAlON was smaller at lower temperatures. Wet milling (in isopropyl alcohol) of AlN powder was found to introduce excess oxygen into the milled powder.

Science.gov (United States)

Combined electron, photon, and intense UV irradiation tests have been carried out on three mirror designs, (Si, Al/sub 2/O/sub 3/)/sub 2/Ag, (Si, SiOx)nAg, and (ZnS, Al/sub 2/O/sub 3/)4Ag, to investigate their suitability for space-borne chemical laser applications. It is found that the (Si, oxide)nAg enhanced-reflectance design is a viable candidate for such applications, whereas ZnS, in combination with either ThF/sub 4/ or Al/sub 2/O/sub 3/, shows unacceptably high absorption increases at the 2.8-micron HF laser wavelength with irradiation. It is pointed out, however, that further experiments are needed to fully understand the effect of irradiation on the (Si, oxide)nAg enhanced-reflectance mirrors.

International Nuclear Information System (INIS)

Thin Pt, Pd, Pt_2Si, PtSi, Pd_2Si, Ni, Mo, W, Nb, Ti, V films deposited on Si single crystal were treated by using electron beam pulses of 60 ns duration in the 0.4-4 J/cm"2 energy density range. Irradiation of these structures produces at the same time many phases. Post-thermal annealing of the reacted layer induces the formation of a stable phase, the same obtained by only thermal treatment in a conventional furnace. A linear relationship between the energy density range and the lowest eutectic temperature of the compounds formed has been found. Further SEM observations seem to identify a liquid layer from which the phases are forming by subsequent fast cooling. (author).

International Nuclear Information System (INIS)

The purpose of the present study is to develop a new method for chemical state analysis by means of EPMA(Electron probe microanalyser). The measured X-ray intensity of Si-K#beta# characteristic X-ray spectra were read-out by a 16 bit microcomputer with a RS-232C interface. And using the curve fitting method the quantitative analysis of chemical compositions in a ternary compound that constituted of the same element has been established. The present method was applied to analyse of the friction and wear properties of Si-base ceramics sliding materials. It was found that the wear debris contains both the compositions of the sliding materials and SiO_2, and the SiO_2 contents in wear debris was changed with relative humidity. The results clearly showed that the proposed method is very useful for determing the compositions in the ternary compound. (author).

International Nuclear Information System (INIS)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.

Science.gov (United States)

The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

International Nuclear Information System (INIS)

Particulate ceramic composites that were composed of a combustion-synthesized #beta#'-SiAlON matrix and dispersed MoSi_2 particles were hot pressed at 1,600 C in a nitrogen atmosphere. The physical and mechanical properties of the composites that contained 15, 30, and 45 vol% MoSi_2 were evaluated. The average four-point bend strength, fracture toughness, and Vickers hardness of the composites were in the ranges of 500--600 MPa, 3--4 MPa#centre dot#m"1"/"2, and 11--13 GPa, respectively. The measured mechanical strength and hardness were very similar to the values that were predicted from the rule of mixtures. The fracture toughness of the combustion-synthesized #beta#'-SiAlON (2.5 MPa#centre dot#m"1"/"2) was apparently enhanced by the MoSi_2 particles that were added. The increase in the fracture toughness was predominantly attributed to the residual thermal stress that was induced ...

International Nuclear Information System (INIS)

Immobilization of long-lived fission products (LLFP) such as radioactive Tc, Cs and Sr into #alpha#-SiAlON ceramics was evaluated using stable isotopes instead of radioactive isotopes, and the applicability of #alpha#-SiAlON ceramics as the inert matrix for transmutation of LLFP was investigated. In the case of single addition of SrO, SrCO_3, Cs_2CO_3 or ReO_2 to the starting materials, #alpha#-SiAlON, single phase was not formed after hot-pressing. When Y_2O_3 was added with SrO, SrCO_3 or Cs_2CO_3 to the starting materials (#alpha#-Si_3N_4, AlN and #alpha#-Al_2O_3) in optimum compositions, #alpha#-SiAlON single phase was obtained after hot-pressing at 1700degC or 1800degC. From the EDS analysis, Sr and Y were detected from grains. It is suggested that Y would assist the expansion of interstices of #alpha#-SiAlON lattice, resulting in the incorporation of ...

International Nuclear Information System (INIS)

Different SiAlON composites based on #alpha#'-SiAlON are investigated, with respect to the phase relationships, densification behavior, and mechanical properties. The compositions are located on a phase-diagram line parallel to the Si_3N_4-Y_2O_3#centre dot#9AlN compound in the Si_3N_4-SiO_2-AlN-Al_2O_3-Y_2O_3-YN system. Analysis of the reaction sequences shows that the formation of the composites is associated with the transient appearance of Y_4Al_2O_9 (YAM), yttrium-aluminum-garnet (YAG), melilite, and a nitrogen-rich liquid phase. The small shift of compositions on the Si_3N_4-Y_2O_3#centre dot#9AlN compound phase-diagram line toward the Al_2O_3-rich side offers the advantage of a higher sinterability and the removal of the melilite phase from a wide range of compositions containing #alpha#'-SiAlON and polytypes. The ...

International Nuclear Information System (INIS)

Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g"-"1 and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the ...

International Nuclear Information System (INIS)

Rare earth stabilised #alpha#-SiAlONs are commonly observed with an equiaxed grain morphology. Elongated #alpha#-SiAlON has been observed in some of these systems, however it usually results from special techniques such as pressure sintering. The formation of elongated #alpha#-SiAlON grains during pressureless sintering has been shown to commonly occur in the Ca #alpha#-SiAlON system. Examination of phase and microstructural development in three Ca #alpha#-SiAlON compositions in the temperature range 1400 deg to 1800 deg C showed that phase development and grain growth occurred at different temperatures. It was found that chemical reactions were completed by 1550 deg C, however significant grain growth did not occur at this temperature. Grain growth progressed from 1600 deg C and continued up to 1800 deg C, the maximum temperature investigated. At 1800 deg C, ...

International Nuclear Information System (INIS)

Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloys with 0#<=#x#<=#1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si_0_._9_5Sn_0_._0_5 layers grown by molecular beam epitaxy (MBE). Agreement between simulated and measured angular scans can only be achieved if we assume a deviation of the crystal structure from the ideal one. This deviation can be attributed to a mosaic structure in the films and to an atomic-scale distortion of the crystal lattice due to an expected difference in the bond lengths between the Si-Si, Si-Sn and Sn-Sn atoms (such a difference in bond lengths has been observed in the epitaxial Si_1_-_xGe_x system). The contributions from both of these imperfections are estimated and discussed.

Energy Technology Data Exchange (ETDEWEB)

TiAl with between 0 and 20 volume percent (v%)Ti5Si3 was produced by reactive sintering of cold pressed compacts of elemental Ti, Al and Si powder mixtures at 700C for 15 minutes in vacuum. The results show that adding Si to Ti and Al reduces the swelling associated with reactive sintering of TiAl, as composites containing more than 5 v%Ti5Si3 densified during reactive sintering. However, composites containing more than 10v% Ti5Si3 did not retain their shape during processing, and the TiAl+20v% Ti5Si3 composite completely melted during the sintering process. The formation of pre-reaction liquid phase and the increase in adiabatic flame temperature with simultaneous compound formation resulted in the melting that occurred and the enhanced densification (minimization of swelling) during reactive sintering of the insitu composites.

Energy Technology Data Exchange (ETDEWEB)

The development of a silicon carbide (SiC) heat exchanger is a critical step in the development of the Externally-Fired Combined Cycle (EFCC) power system. SiC is the only material that provides the necessary combination of resistance to creep, thermal shock, and oxidation. While the SiC structure materials provide the thermomechanical and thermophysical properties needed for an efficient system, the mechanical properties of the SiC tubes are severely degraded through corrosion by the coal combustion products. To obtain the necessary service life of thousands of hours at temperature, a protective coating is needed that is stable with both the SiC tube and the coal combustion products, resists erosion from the particle laden gas stream, is thermal shock resistant, adheres to SiC during repeated thermal shocks (start-up, process upsets, shut-down), and allows the ...

British Library Electronic Table of Contents (United Kingdom)

A type of Si3N4-based nanocomposites ceramic cutting tool material was prepared by the addition of nano-scale Si3N4W whisker and nano-scale TiN particle. Cutting performance of the Si3N4/Si3N4W/TiN nanocomposite ceramic tool in machining of cast iron was investigated in comparison with a commercial sialon ceramic tool, and the tool wear mechanism was studied. The two types of cutting tools have similar cutting performance at relatively low cutting parameters, while Si3N4/Si3N4W/TiN nanocomposite tool exhibits a better wear resistance than sialon tool at the relatively high cutting parameters. The wear of sialon ceramic cutting tool is dominated by the plastic deformation, abrasive action, microcracking, pullout of grains and chemical action at the higher cutting parameters. The higher mech...

Energy Technology Data Exchange (ETDEWEB)

The compounds CePdSi{sub 2}, CeIrSi{sub 2} and CeRhSn{sub 2} have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi{sub 2} exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi{sub 2} shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn{sub 2} remains paramagnetic down to 5 K. The resistivity of CeIrSi{sub 2} exhibits a T{sup 2} dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi{sub 2} and CeRhSn{sub 2} shows the presence of Kondo and crystal field effects. (orig.). 5 refs.

International Nuclear Information System (INIS)

The microstructure of a pressureless sintered (1,605 C, 90 min) O' + #beta#' SiAlON ceramic with CeO_2 doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20--30 #mu#m long), and a continuous matrix of small rodlike #beta#' grains (< 1.0 #mu#m in length). Many #alpha#-Si_3N_4 inclusions (0.1--0.5 #mu#m in size) were found in the large O' grains. CeO_2-doping and its high doping level as well as the high Al_2O_3 concentration were thought to be the main reasons for accelerating the reaction between the #alpha#-Si_3N_4 and the Si-Al-O-N liquid to precipitate O'-SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant #alpha#-Si_3N_4 from the reacting liquid, resulting in a delay in the #alpha# #-># #beta#-Si_3N_4 transformation. The ...

Energy Technology Data Exchange (ETDEWEB)

The ab initio pseudopotential method is used to study transient-enhanced-diffusion (TED) related processes. The electronic degrees of freedom are included explicitly, together with the fully self-consistent treatment of the electron charge density. A large supercell and a fine k-point mesh are used to ensure numerical convergence. Such method has been demonstrated to give quantitative description of defect energetic. We will show that boron diffusion is significantly enhanced in the presence of the Si interstitial due to the substantial lowering of the migrational barrier through a kick-out mechanism. The resulting mobile boron can also be trapped by another substitutional boron, forming an immobile and elect rically inactive two-boron pair. Similarly, carbon diffusion is also enhanced significantly due to the pairing with Si interstitial. However, carbon binds to Si interstitial much more strongly than boron does, taking ...

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This paper describes the effects of SiC coating on the oxidation resistance of C/C composites in combusting fields, which are expected to be applied to high temperature structural materials at over 1770K. The coating methods employed were CVD and pack cementation. The time changes in weight loss of the specimens were measured at temperatures of 1770K and 1900K under the equivalence ratio of 0.9 generated by methane-air combustion, and the surface of the specimens before and after the experiment was observed by SEM. Although the weight loss of the specimens coated by the CVD method was minimal, the coating layer was easily peeled off from the substrate. On the other hand, the layer of the specimens coated by the pack cementation method was stable and adhered to the substrate, but the substrate was degraded because of penetration of oxygen through the pores in the layer. To cover the pores, the specimens were additionally coated with glass materials comprised of ...

Energy Technology Data Exchange (ETDEWEB)

SiC has been considered as a primary candidate material for a first wall component in future fusion reactor because it has been claimed that SiC has excellent high-temperature properties, good chemical stability and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, tritium trapping capacity on the surface of SiC was experimentally obtained at the temperature range of 25-800 deg. C in consideration of tritium trapping to the experimental system. The capacity, which was independent of the water vapor pressure in the gas phase and the temperature, was determined as about 10{sup 6} Bq/cm{sup 2}. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface was quantified at the temperature of 25, 500 and 700 deg. C in consideration of the behavior of tritium trapping at change of experimental condition by the numerical ...

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the ...

International Nuclear Information System (INIS)

SiAlONs are ceramics with high potential as biomaterials due to their chemical stability, associated with suitable mechanical properties, such as high fracture toughness and fracture resistance. The objective of this work was to investigate the mechanical properties and the cytotoxicity of these ceramic materials. Three different compositions were prepared, using silicon nitride, aluminum nitride and a rare earth oxide mixture as starting powders, yielding Si_3N_4-SiAlON composites or pure SiAlON ceramics, after hot-pressing at 1750 deg. C, for 30 min. The sintered samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). Furthermore, hardness and fracture toughness were determined using the Vicker's indentation method. The biological compatibility was evaluated by in vitro cytotoxicity tests. Ceramic with elevated hardness, ranging between 17 and 21 GPa, and ...

Science.gov (United States)

The isomerization of neopentane has been investigated over the 0.76 wt% Pd/SiO{sub 2} catalyst. It is found that after high temperature reduction (HTR, at 873 K) the selectivity for isomerization is much higher than that after low temperature reduction (LTR, at 573 K). A variety of experiments, including kinetic, chemisorption (O{sub 2}, H{sub 2}, and CO), temperature-programmed desorption of H{sub 2}, and X-ray diffraction, showed that this selectivity enhancement cannot be interpreted in terms of H{sub 2} retention by catalyst. Instead, the formation of Pd-Si compound(s) (most probably Pd{sub 3}Si) during HTR seems immediately responsible for the catalytic behavior of HTR Pd/SiO{sub 2} catalysts. A mechanism is proposed for the Pd-SiO{sub 2} interaction in which Pd atoms (or ions) are incorporated into the silica support (via oxygen vacancies) and a new phase of palladium silicide ...

Energy Technology Data Exchange (ETDEWEB)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

Energy Technology Data Exchange (ETDEWEB)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

Energy Technology Data Exchange (ETDEWEB)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

Energy Technology Data Exchange (ETDEWEB)

The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four.

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in ...

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

indications of the formation of palladium silicides. 2, 4. It has been reported .... At room temperature, palladium silicides formed in a relatively narrow interface ...

British Library Electronic Table of Contents (United Kingdom)

In this study, the influence of Beryllium (Be) content on the fracture behaviour of Al?15%Mg2Si composite was investigated. The results showed an increase in mechanical properties with increasing of Be content. The stress?strain curves of samples showed a same category of serrations reflecting non-uniform deformation. Scanning electron microscopy was employed to examine the crack nucleation and fracture model. The results indicate that Al?15%Mg2Si composite shows different behaviours of crack initiation and fracture for samples with and without Be. Differences observed in the fracture behaviour were attributed to microstructural changes as well as morphological aspects of primary Mg2Si particles.

International Nuclear Information System (INIS)

Structure and magnetic properties of UNi_1_0_-_xFe_xSi_2 intermetallics and "2"9Si nuclear magnetic resonance (NMR) in UNi_1_0Si_2 are investigated in a wide temperature range. Solid solutions in the exactly single-phase tetragonal form, ThMn_1_2 type, exist for x<2. The Ni and Fe atoms occupy the 8(f), 8(i) and 8(j) positions statistically, whereas the U atoms occupy the 2(a) and the Si atoms the 8(j) sites. The lattice parameters roughly follow Vegard's law. The magnetic susceptibility does not exhibit Curie-Weiss behaviour and, at about 630 K, an anomaly in the temperature dependence is observed. At low temperature, other anomalies are observed at 32 K and 45 K, for x=0.5 and 1.0 respectively. These low temperature anomalies are probably connected with magnetic ordering of a ferromagnetic character, whereas that at 630 K might result from the superparamagnetic state of Ni. Two ...

International Nuclear Information System (INIS)

Short communication. 2 figs.

Science.gov (United States)

Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in ...

International Nuclear Information System (INIS)

... p. 93 Russian Federation Rovnyj, SI Ufimtsev, VP Shevtsev, PP Nedelina,

International Nuclear Information System (INIS)

Beta-SiAlON powders have been synthesized using natural clay containing kaolin and quartz by carbothermal reduction and nitridation (CRN), then beta-SiAlON bonded corundum multiphase materials have been sintered using the as prepared powders. The results indicated that both the holding time and sintering temperature are relatively significant in accordance with optimal analysis by orthogonal method. Reaction process can be briefly interpreted by means of X-ray Diffraction and Difference Temperature Analysis as well as phase diagram principle. Bending strength and bulk density were measured in SiAlON in situ bonded corundum materials with doped various sintering agents. Furthermore, the relevant mechanical properties and microstructure were discussed in detail.

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

British Library Electronic Table of Contents (United Kingdom)

Yb-, Y-, Yb/Y-, and Yb/Nd-doped -SiAlON ceramics with 5-wt% barium aluminosilicate (BAS) were synthesized by hot pressing. Typical self-reinforced microstructures were obtained in all investigated -SiAlONs in spite of the type of doped cations. This is attributed to the incorporation of BAS, which could supply suitable liquid phase to promote the anisotropic growth of the -SiAlON grains. All the composites exhibited excellent high-temperature mechanical properties and thermal shock resistance due to the formation of a self-reinforced microstructure and the complete crystallization of BAS additive.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of the ternary compounds, RPd/sub 2/Si/sub 2/ (where R=Gd, Tb, Dy, Ho and Er) has been measured. GdPd/sub 2/Si/sub 2/ and TbPd/sub 2/Si/sub 2/ order antiferromagnetically at 13 and 20 K respectively; the rest of the compounds do not show clear ordering down to 4.2 K. Palladium carries no moment in these compounds. The De Gennes formula is not obeyed indicating that the exchange interaction between the 4f moments via conduction electrons is not isotropic.

International Nuclear Information System (INIS)

(Dec 1971). United States Alexander, DR Antinone, RJ Durham, NH

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

English 2004 2 p. Brazil Rocha, RM Centro Tecnico Aeroespacial (CTA),

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code

International Nuclear Information System (INIS)

Single crystals of U(Ni_1_-_xPd_x )_2Si_2 for x = 0.05, 0.10 and 0.15 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures, magnetic fields and high pressures in order to study stability of magnetic phases in the solid solutions between UNi_2Si_2 and UPd_2Si_2 with a special emphasis on the type of ground state. In UPd_2Si_2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi_2Si_2 adopts the uncompensated AF structure (UAF) with the ++- stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to ...

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

Science.gov (United States)

A way to synthesize the transient zwitterionic silylene L'Si: 8 {L'=CH[(C=CH(2))CMe(N(tBu))(2)]} and achieve its facile dimerization to the remarkable N-heterobicyclic disilane 8(2) is described. At first, employing the beta-diketiminate ligand L [L=CH(CMeN(tBu))(2)], both starting materials LH (2) and its N-lithium salt LLi (3) can react with SiBr(4) to yield the silylene precursor L'SiBr(2) (4) by silicon-induced C-H activation at an exocyclic methyl group on the backbone of the ligand. Compound 4 reacts with SiBr(4) above room temperature to afford the unexpected terminal CH(SiBr(3))-substituted dibromosilane 6 along with the unique tricyclic trisilane 7. Reduction of 4 with KC(8) at 0 degrees C furnishes the novel N-heterobicyclic disilane 8(2), which is a formal dimer of the desired zwitterionic silylene L'Si: (8). It has been reasoned that compound 8(2) ...

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and ...

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

Energy Technology Data Exchange (ETDEWEB)

In this paper two MSW management case-studies are analyzed: the Bressanone and Trento cases (two italian towns). Separate collection solution are analyzed in a great detail. The aim to point out data and solutions useful to obtain the target of the separate collection set in the Ronchi's Decree. A comparison difficulties and unclear aspects of Rochi's Decree are also analyzed in the second part of this paper. [Italian] Nel presente studio e' stata effettuata un'analisi tecnico-economica dei sistemi di gestione dei rifiuti urbani e raccolta differenziata dei comuni di Bressanine e Trento con l'obiettivo di produrre dati di riferimento sufficientemente affidabili, utili all'ottimizzazione dei sistemi stessi nonche' all'individuazione delle soluzioni tecniche necessarie al raggiungimento degli obiettivi di raccolta differenziata previsti dal decreto Rochi. Il successivo confronto dei risultati relativi alle due ...

Energy Technology Data Exchange (ETDEWEB)

Bowel infarction is a rare and typical condition of the elderly; despite improvements in diagnostic imaging and vascular surgery, bowel infarction remains a major cause of acute abdomen, with mortality rates ranging 70-80%. Diagnosis on often late because clinical signs, laboratory data and radiologic findings are a specific. The authors investigated radiographic and particular CT patterns of intestinal infraction in 56 patients submitted to surgery within 12 hours of admission. We also report the CT findings of 5 of these patients who had reversible mesenteric ischemia. CT is more sensitive than radiography and does not exhibit the limitations of angiography (i.e., invasiveness, radiation exposure and complex organization). Therefore CT can presently be considered the method of choice in patients with suspected bowel infarction. [Italian] L'infarto intestinale rappresenta una malattia rara e tipica del soggeto anziano; nonostante il notevole perfezionamento delle tecniche di ...

Science.gov (United States)

The change in concentrations of elements due to transmutations resulting from neutron irradiation in the first wall of the ARIES-IV conceptual fusion energy device were determined as a function of neutron dose. SiC burns out at a rate of about 0.5% per effective full power year. The largest impurity concentration is that of He, but several other elements burn in at rates of hundreds of appm/efpy.

International Nuclear Information System (INIS)

Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)

Energy Technology Data Exchange (ETDEWEB)

This study investigates the effect of solid and liquid lubrication on friction and wear performance of silicon nitride (Si{sub 3}N{sub 4}) and cast iron. The solid lubricant was a thin silver film ({approx}2 {mu}m thick) produced on Si{sub 3}N{sub 4} by ion-beam-assisted deposition. A high-temperature polyol-ester-base synthetic oil served as the liquid lubricant. Friction and wear tests were performed with pin-on-disk and oscillating-slider wear test machines at temperatures up to 300{degrees}C. Without the silver films, the friction coefficients of Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} test pairs were 0.05 to 0.14, and the average wear rates of Si{sub 3}N{sub 4} pins were {approx}5 x 10{sup -8} mm{sup 3} N{sup -1}. The friction coefficients of Si{sub 3}N{sub 4}/cast iron test pairs ranged from 0.08 to 0.11, depending on test temperature. The average specific ...

Energy Technology Data Exchange (ETDEWEB)

Recent developments in design and production of thermal neutron detectors based on a crystalline Si diode coupled to a Gd converter are reviewed. The most significant results of neutron test measurements carried out on prototype systems and pointing out the performances of the device are reported. Progress through various detection schemes and technological solutions for the production of a real time neutron counter for routine operation are outlined.

Energy Technology Data Exchange (ETDEWEB)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA.

Science.gov (United States)

Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.

Energy Technology Data Exchange (ETDEWEB)

Results of experimental researches of impurity level crystals Fe1-xCoxSi are presented in this article. Magnetic properties in a temperature range up to T {<=} 1000 K are analyzed. It was established that with Co impurities increasing origin of magnetic ordering exists at low temperatures. At high temperatures a high temperature maximum of susceptibility of nominally pure iron monosilicide crystal is observed.

International Nuclear Information System (INIS)

The compound UC_2Si_2 has been found to be ferromagnetic at low temperatures with a Curie temperature of 101"0K. The magnetization follows a Curie-Weiss law in the paramagnetic region with an effective magneton number of 2.12 Bohr magnetons per uranium atom. Partial substitution of Th atoms for the U atoms results in an expansion of the lattice, a rapid drop in the Curie temperature, and a sizable increase in the coercive field.

Energy Technology Data Exchange (ETDEWEB)

We report on solid solution CePd[sub 2-x]Mn[sub x]Si[sub 2] which shows an interesting transition of the Ce-ion from magnetism in a Kondo regime to an intermediate valence state coupled with a strongly magnetic 3d sublattice. ((orig.))

International Nuclear Information System (INIS)

In order to investigate the role of amorphous SiO2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of ?-phase and amorphous nano-SiO2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was ...

International Nuclear Information System (INIS)

Experimental data in the Kondo lattice YbPd_2Si_2 is compared with the results of a hybridization model, based ont he 'large degeneracy expansion' approximation, which takes into account the crystal field level splittings of the Yb ion. We show that satisfactory agreement is obtained with a unique set of crystal field and hybridization parameters. (orig.).

Energy Technology Data Exchange (ETDEWEB)

We report resistivity and thermopower measurements of the heavy fermion compound CePd{sub 2}Si{sub 2} at pressures up to 56 kbar. At pressures from 21 to 34.5 kbar, we measured the resistivity down to 30 mK, for all other pressure steps the temperature range was 1.2-300 K. (orig.).

International Nuclear Information System (INIS)

The Grueneisen parameter and lattice thermal expansion of the A-15 compounds V_3Si and V_3Ge at room temperature are evaluated on the basis of the method due to Brugger and Fritz from the third order elastic constants reported earlier. The calculated values are compared with available experimental values and are found to fit satisfactorily. (author).