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indications of the formation of palladium silicides. 2, 4. It has been reported .... At room temperature, palladium silicides formed in a relatively narrow interface ...

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International Nuclear Information System (INIS)

The possibilities and problems of PCA in phase separation are shown on Ni, Pd, and Pt silicides. The PCA depth profiles are less influenced by sputter and matrix effects than usual Auger depth profiles. The position of the silicide-Si interface is well defined by the component distribution crossover in PCA profiles. An interface component between Pd and Pt silicides and Si substrate is determined by PCA. (author).

Science.gov (United States)

... AT THE INTERFACE, A THIN OXIDE LAYER IS OBSERVED ALONG WITH POSSIBLE PALLADIUM SILICIDES. PALLADIUM ...

Science.gov (United States)

A number of alloys of zirconium have been investigated as part of a program aimed at improving the high-temperature tensile and creep strength of zirconium. These alloys include aluminum, beryllium, lead, magnesium, molybdenum, niobium, tantalum, tin, titanium, tungsten, vanadium, and zinc, binary and ternary alloys. The data indicate that aluminum, lead, molybdenum niobium, tin, titanium, tungsten, and vanadium can be used successfully to harden zirconium, and that aluminum, tin, titanium, and vanadium are particularly effective in maintaining the strength of zirconium at elevated temperatures.

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

International Nuclear Information System (INIS)

A spectrophotometric study has been made of the complex formation of vanadium (3) with arsenazo(1), arsenazo(3) and some monosubstituted derivatives of chromotropic acid and sulphanylamides. In acid medium vanadium (3) reacts with each of these reagents to produce a 1:1 complex. Optimum conditions of the complex formation was found. The effect of H"+ on the complex formation of vanadium (3) with chromotropic acid derivatives was established. It was found by the graphical method that the formation of the complex is accompanied by the elimination of one proton. Patterns were found of the influence of the nature of substituents in the organic compound on the ionization constants of acid groups and stability of complexes. Molar extinction coefficients, equilibrium constants of the formation reactions and instability constants for the complexes were calculated. The structure of complexes was suggested. Similar behaviour of all ...

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

Russian (Dec 1973). USSR Chmovzh, VE Lipshtejn, RA Zalkind, I.Ya. Dik,

Energy Technology Data Exchange (ETDEWEB)

The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

International Nuclear Information System (INIS)

The electron-phonon coupling constant lambda has been calculated for vanadium. The electron energy bands and wave functions were obtained from a model augmented plane wave muffin-tin potential. The electron-phonon matrix elements were evaluated using the rigid-ion approximation and the measured phonon spectra. The results show that lambda is strongly affected by d-f scattering.

International Nuclear Information System (INIS)

Mechanical properties of vanadium, irradiated with fast neutrons up to 8.6x10"-"4 dpa depending on postirradiation annealing temperature, are studied. It is shown that radiation-annealing hardening (RAH) is observed at 300 deg C, which agrees with earlier performed studies. It is first stated that RAH is accompanied by plasticity decrease. Phenomenological model permitting to explain RAH dependence on irradiation temperature and dose and also on content of chemically active alloying impurities is suggested.

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

Science.gov (United States)

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra ...

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The catalytic oxygen transfer properties of vanadium containing zeolites and vanadium based sol-gel catalysts with hydrogen peroxides are well known. The severe problem of vanadium leaching caused by the presence of the by-product water has been addressed. To avoid any interference with homogeneously catalyzed reactions, our study focusses on selective oxidations in a moisture-free medium with tert.-butylhydroperoxide. We have investigated the catalytic properties of amorphous microporous materials based on SiO{sub 2}, TiO{sub 2}, ZrO{sub 2} and Al{sub 2}O{sub 3} as matrix material and studied the effects of surface polarity on the oxidation of 1-octene and cyclohexane. (orig.)

International Nuclear Information System (INIS)

A method is described for determination of aluminium, cadmium, cobalt, chromium, copper, calcium, magnesium, sodium, potassium, manganese, nickel, lead, strontium, zinc, titanium and vanadium in iron ore. After dissolution, a 1 gram sample of iron ore is applied to a column of AGI-X8 anion exchange resin (chloride form), in 100 ml of 7M HCl. Aluminium, chromium, calcium, magnesium, sodium, potassium, manganese, nickel, lead, strontium, titanium and vanadium are eluted with 7M HCl; iron, copper and cobalt are eluted with 0.5M HCl; cadmium and zinc are eluted with 2M HNO_3. Iron is subsequently removed from copper and cobalt by a solvent extraction with methyl isobutyl ketone. The elements are determined in the eluates by atomic absorption spectrometry, except for titanium and vanadium, which are determined spectrophotometrically.

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby ...

Energy Technology Data Exchange (ETDEWEB)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

Energy Technology Data Exchange (ETDEWEB)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

International Nuclear Information System (INIS)

Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi_2) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability ...

International Nuclear Information System (INIS)

The observation by inelastic neutron scattering techniques of a high energy peak in the phonon spectrum (14 THz) of V_3Si is reported, and is attributed to a peak in the phonon density of states due to vanadium motions by the incoherent inelastic neutron scattering process.

Energy Technology Data Exchange (ETDEWEB)

The authors investigate the possibility of the direct heterogeneous catalytic synthesis of ethylbenzoate from benzonitrile. The catalysts tested were oxides of aluminium, titanium, and vanadium. The main conversion product detected chromatographically was ethylbenzoate; benzaldehyde, benzamide, and benzanilide were also identified. Aluminium oxide was found to be the most effective catalyst.

International Nuclear Information System (INIS)

Growing competitiveness of alternative manufacturing routes requires cost minimization in the production of drop forged components. The authors analyse the potential of medium carbon, vanadium microalloyed steels for drop forging. Laboratory and industrial experiments have been carried out emphasizing deformation and temperature cycles, strain rates and dwell times showing a typical processing path, associated mechanical properties and corresponding microstructures. The steels the required levels of mechanical properties on cooling after forging, eliminating subsequent heat treatment. The machinability of V-microalloyed steels is also improved when compared with plain medium carbon steels. (author)

Energy Technology Data Exchange (ETDEWEB)

It is reported about the adsorptive stripping voltammetric determination of uranium, antimony, tin, vanadium and molybdenum using chloranilic acid as complex forming reagent. The determination limits are in the l{sup 1}-range. (orig.) [Deutsch] Es wird ueber die Bestimmung von Uran, Antimon, Zinn, Vanadium und Molybdaen durch Adsorptions-Stripping-Voltammetrie mit Chloranilsaeure als Komplexbildner berichtet. Die Bestimmungsgrenzen liegen im ng l{sup -1} Bereich. (orig.)

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering spectra (RBS) showing the ...

International Nuclear Information System (INIS)

The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

British Library Electronic Table of Contents (United Kingdom)

Palladium silicide was formed on the sol-gel derived SiO2 supported Pd catalysts prepared by ion-exchange method (Pd/SiO2-SG-ion). However, the catalysts exhibited superior performances than commercial SiO2 supported ones in liquid-phase semihydrogenation of phenylacetylene. It was probably due to an inhibition of a product of styrene, which is adsorbed on the surface of Pd, more strongly on Pd/SiO2-SG in which Pd is electron-deficient as shown by larger binding energy from XPS results.

International Nuclear Information System (INIS)

The development of the microstructure on aging of an (#alpha# + #beta#) type titanium alloy containing 6Al-1.6Zr-3.3Mo-0.3Si (VT9) (in weight percent) has been studied. The #beta#-transus temperature of this alloy is approximately 1243 K. Solution treatment in the #beta#-phase field of the alloy followed by quenching in water at room temperature resulted in the formation of a single-phase martensite structure. The martensitic structure was confirmed to be orthorhombic (#alpha# double-prime) using X-ray diffraction. The water-quenched (WQ) specimens were subjected to aging treatments at temperatures of 823, 873, and 973 K for various lengths of time. Aging at 823 K for times between 24 and 100 hours did not bring about any noticeable change in the microstructure. Aging at 823 K for 200 and 300 hours resulted in the heterogeneous precipitation of s_2 silicide particles and thin films of #beta# sandwiched between the interplatelet boundaries of martensite. Electron ...

International Nuclear Information System (INIS)

Thermochromic tungsten-doped vanadium dioxide (VO2) powders were successfully synthesized by thermal reduction using V2O5 as a vanadium precursor. The products were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The results indicated that W was successfully doped into the crystal lattice of VO2 matrix, and prepared tungsten-doped VO2 had a rod-like morphology. The effects of reducing temperature and annealing temperature on the crystallographic structures were also discussed. The phase transition temperature (Tt) of VO2 could be simply tuned by changing the doping concentration of tungsten. When the doping concentration was 1.58 mol%, the Tt could be reduced to 37.8 oC from initial 69.5 oC, suggesting that tungsten-doped VO2 possesses prominent thermochromic properties and optical switching characters. It has shown that this ...

Science.gov (United States)

The relationship between processing, microstructure, and properties was studied for A-15 compounds in multifilamentary composites produced by solid-state diffusion and in thin-film samples produced by vapor deposition. Grain sizes of A-15 superconducting compounds were measured by transmission electron microscopy of multifilamentary composites reacted at various temperatures. Critical current densities at 4.2 K and fields up to 6 T were found to be similar for niobium-tin, vanadium-gallium, and vanadium-silicon of the same grain size. Study of the Cu-V-Si phase diagram led to the production of improved multifilamentary vanadium-silicon conductors. The effects of various alloying elements on A-15 layers produced by solid-state diffusion were studied. The most promising new observation was that tantalum can be incorporated into niobium-tin reaction layers, leading to an enhancement of critical currents at high fields. The ...

International Nuclear Information System (INIS)

The effect of W and V on the high temperature strength properties of 12%Cr-15%Mn austenitic steels was studied from the view point of precipitation hardening and internal stress. The contribution of W addition to the tensile and creep-rupture strength was not so large. By contrast the combined addition of W and V increased the strength considerably. These are resulted from the precipitation of fine vanadium nitride (VN) within grains and the enhancement of M_2_3C_6 type carbide precipitation at grain boundaries. The V added material had large internal stress value which is considered to be due to dislocation movement disturbed by fine vanadium nitrides. (author).

British Library Electronic Table of Contents (United Kingdom)

The monoanionic bidentate Schiff base, N-(phenolyl)-benzaldimine (HL), has been employed to synthesize a new vanadium(IV) complex of general composition [VO(L)2] (where L = O, N donor of Schiff base). The ligand and complex have been fully characterized by elemental analyses, molar conductance data, FT-IR, 1H- and 13C-NMR, and UV-Vis spectroscopies. Oxidation of alcohols to their corresponding aldehydes and ketones was conducted by this complex catalyst using Oxone as oxidant under biphasic reaction conditions (CH2Cl2/H2O) and tetra-n-butylammonium bromide as phase transfer agent under air at room temperature.

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd"2Si films. ...

Science.gov (United States)

Two major modes of CO adsorption on SiO{sub 2}-supported Pd reflect different extents of back-donation, which is, at least in part, controlled by the local electron density at the adsorption site. The fraction of CO in the bridging mode (B) increases and that of the linear mode (L) decreases, with increasing size of the Pd particles, indicating high electron density at Pd atoms in terraces of close-packed crystal faces, in agreement with Smoluchowski's classical model. For samples reduced at 300{degree}C our data points and those of other authors are located on a common curve of B/L vs metal dispersion. Extensive reduction at 600{degree}C results in significantly lower B/L values, attributed to the incipient formation of a palladium silicide. Oxidation followed by reduction at 300{degree}C destroys the silicide, and the B/L value returns to the original curve.

International Nuclear Information System (INIS)

The transformation of Pd/Si to Pd_2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd_2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd_2Si is formed in the form of islands, which grow as the annealing temperature is increased.

International Nuclear Information System (INIS)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).

International Nuclear Information System (INIS)

By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

Science.gov (United States)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.

International Nuclear Information System (INIS)

Cerium L_3 XANES (x-ray-absorption near-edge-structure) spectra were analyzed to separate Ce moment contributions and mixed valence (MV) in complex magnetic silicides CePd_2_-_xMn_xSi_2 (0#<=#x#<=#2). The Ce valence mixing does not vary linearly with x, but increases rapidly for x#>=#1.5. The associated moment collapse correlates with pronounced deviations of the unit-cell volume from Vegard law and the onset of structural instability. Reorientation of [001] Mn 3d antiferromagnetic order for x<2 appears to rapidly suppress the weak Ce valence mixing coexisting with antiferromagnetic order in CeMn_2Si_2.

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

International Nuclear Information System (INIS)

The separation, concentration, and determination of trace elements in iron ores are described. After the sample has been dissolved, the iron is separated by liquid-liquid extraction with a liquid cation-exchanger, di-(2-ethylhexyl) phosphoric acid. The trace elements aluminium, cadmium, calcium, chromium, cobalt, copper, lead, magnesium, manganese, mercury, potassium, sodium, vanadium, and zinc are determined in the aqueous phase by atomic-absorption spectrophotometry.

Energy Technology Data Exchange (ETDEWEB)

The surface properties of copper-refractory metal (CU-RF) alloy bodies are modified by heat treatments which cause the refractory metal to form a coating on the exterior surfaces of the alloy body. The alloys have a copper matrix with particles or dendrites of the refractory metal dispersed therein, which may be niobium, vanadium, tantalum, chromium, molybdenum, or tungsten. The surface properties of the bodies are changed from those of copper to that of the refractory metal.

International Nuclear Information System (INIS)

Heterodyne detection with a point-contact Josephson junction has been investigated both experimentally and theoretically. The measured performance of the device at 36 GHz is in good agreement with the theory. By operating vanadium point contacts at 1.4 K, the authors have achieved a single-sideband (SSB) mixer noise temperature of 54 K with a conversion gain of 1.35 and a signal bandwidth on the order of 1 GHz. A potentially impressive performance for these devices at submillimeter wavelengths can be extrapolated from the results.

International Nuclear Information System (INIS)

The author discusses the accelerated aging tests performed using Hondo and Maya as aging resids with a commercial large pore hydrotreating catalyst. The results from these tests were compared with those obtained under a normal full life test. The test resid was a sample of a typical refinery charge and the activities for sulfur and vanadium removal were determined at 720"0F after successive brief periods of exposure to the heavier oils.

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued beneath the Si surface. The part of the #beta#-FeSi_2 nanodot ...

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect ...

International Nuclear Information System (INIS)

Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).

Science.gov (United States)

The oxidative dehydrogenation (OXDH) of n-butane, 1-butene, and trans-2-butene on different vanadia catalysts has been compared. MgO, alumina, and Mg-Al mixed oxides with Mg/(Al + Mg) ratios of 0.25 and 0.75 were used as supports. The catalytic data indicate that the higher the acid character of catalysts the lower is both the selectivity to C{sub 4}-olefins from n-butane and the selectivity to butadiene from both 1-butene or trans-2-butene. Thus, OXDH reactions are mainly observed from n-butane and butenes on basic catalysts. The different catalytic performance of both types of catalysts is a consequence of the isomerization of olefins on acid sites, which appears to be a competitive reaction with the selective way, i.e., the oxydehydrogenation process by a redox mechanism. Infrared spectroscopy data of 1-butene adsorbed on supported vanadium oxide catalysts suggest the presence of different adsorbed species. O-containing species (carbonyl and alkoxide species) ...

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Safety and environmental assessments have been made of conceptual fusion power plant designs employing silicon carbide composites (SiC/SiC) as the first wall and blanket structure material. These have used similar analysis methods to earlier studies of designs based on vanadium alloy or low-activation martensitic steel, allowing direct comparisons. The very low short-term activation of silicon carbide results in an almost insignificant level of decay heat in postulated loss of coolant accidents, and a lower {gamma}-dose rate on the timescale of relevance to handling for maintenance operations. However on the longer time-scale, of interest in possible recycling operations, decommissioning and waste management, SiC/SiC appears to perform no better than vanadium alloy or low-activation martensitic steel, due in part to the activation of impurities in a realistic composition. Furthermore, its increased neutron transparency may result in higher ...

International Nuclear Information System (INIS)

Irradiation of ferritic steels with neutrons in the temperture range of room temperature to #propor to# 450deg C results in lattice hardening, which causes an increase in strength and a decrease in ductility. Eight reduced-activation Cr-W-V stels with chromium concentration varying from 2.25 to 12% were irradiated at 365deg C to #propor to# 7 dpa in the Fast Flux Test Facility. A steel with 2.25% Cr and the combination of 2% W and 0.25% V hardened less than those containing vanadium or tungsten alone or a steel with 1% W and 0.25% V. The amount of hardening was similar for Cr-W-V steels with constant vanadium and tungsten concentrations and containing 2.,25, 5, and 9% Cr; a steel with 12% Cr hardened considerably more. Specimens of two conventional Cr-Mo steels, 9Cr-1MoVNb and 12Cr-1MoVW, were also irradiated, and the hardening of these steels was similar to analogous reduced-activation steels. (orig.).

Science.gov (United States)

The Knight shift of vanadium (KV) in fine V3Si particles was studied. The average diameter (\\bar{d}) ranged from 60 to 8000 A. The strong temperature dependence of the KV characteristic of high-Tc A-15 compounds was weakened in the particles. KV at 77 K increased with a decrease in \\bar{d}. The above-mentioned trends were consistent with a broadening of the sharp peak in the electronic density of states around the Fermi energy in particles resulting from a perturbation of the surface.

International Nuclear Information System (INIS)

The description is presented of binary phase diagrams of titanium alloyed with the following elements: silver, aluminium, arsenic, gold, boron, barium, beryllium, bismuth, carbon, calcium, cadmium, cobalt, chromium, copper, iron, gallium, germanium, hydrogen, hafnium, indium, iridium, potassium, lithium, magnesium, manganese, molybdenum, nitrogen, sodium, niobium, nickel, oxygen, osmium, phosphorus, lead, palladium, platinum, plutonium, rhenium, lanthanium, cerium, preseodymium, neodymium, gadolinium, erbium, terbium, thulium, lutetium, rhodium, ruthenium, scandium, silicon, tin, strontium, tantalum, technetium, thorium, uranium, vanadium, tungsten, yttrium, ytterbium, zinc and zirconium.

International Nuclear Information System (INIS)

The influence of microalloying vanadium or titanium on improving the corrosion resistance of mild steel in saturated calcium hydroxide solution was investigated. Potential-time, potentiodynamic polarization, and impedance measurement techniques were employed. The corrosion products have been examined by infrared and X-ray diffraction analysis and by scanning electron microscopy. It has been shown that the grain refining, due to microalloying, plays an important role in enhancing the corrosion resistance of steel. Scales of calcite and iron oxides on top of a protective oxide are formed on the investigated steels.

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A process is described for making a compound selected from a crystalline spinel of the formula A/sup II/V/sub 2-x//sup III/C/sub x//sup III/O/sub 4/ formula (1) or a crystalline perovskite of the formula D/sup III/V/sub 1-y//sup III/C/sub y//sup III/O/sub 3/ formula (2) from a pentavalent vanadium compound, where A is one or more of Mg, Zn, Mn, Fe, Co, Ni, Cu and Cd; D is one ore more of Y, the rare earths and Bi; C is one or more of Al, Ga, Cr, Fe and Co, x is zero to <2, and y is zero to<1. The process comprises (1) reducing a pentavalent vanadium oxidic compound to substantially the V/sup III/ state by heating at 100/sup 0/C. or less an aqueous medium slurry or solution of the pentavalent compound containing a reducing agent selected from hydrazine and a hydrocarbylhydrazine, (2) providing in the aqueous medium either before, during or after the reducing step, A/sup II/, D/sup III/ and C/sup III/ cations in solution in the ratio called ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the ...

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The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)

Energy Technology Data Exchange (ETDEWEB)

By means of neutron diffraction, using the standard polycrystalline sample of Al{sub 2}O{sub 3}, measurements on three (of four spectrometers) already installed in the front of horizontal channels of MARIA reactor have been performed. Basing on these experiments as well as on activation measurements carried out earlier, the fluxes of monoenergetic neutrons have been estimated. These experiments allowed to determine (for a given geometry and kind of monochromators chosen) the resolution efficiency of instruments and high order contamination in the reflected beam. With the help of polycrystalline vanadium and TbBr{sub 3} sample, the possibility of studies using the inelastic scattering process have been tested. (author) 7 refs, 15 figs, 7 tabs

International Nuclear Information System (INIS)

The critical superconducting paramters of A-15 compounds are reviewed, and the trends analysed in order to predict maximum values. Experimental data on critical temperature is summarized and compared with theory. The ability to form the stoichiometric, well-ordered materials required for maximum Tsub(c) is discussed in terms of the thermodynamic stability of the A-15 phase. It is concluded that critical temperatures in excess of 25 K, in the A-15 structure, are unlikely. The upper critical field data show that, whereas the vanadium-based compounds are paramagnetically limited, the niobium-based compounds are not. The relation between critical current and microstructure is explored. Best data on critical current densities and ac losses is presented. Finally an account is given of the various methods by which actual conductors, both tapes and multifilamentary wires, are made. (author).

International Nuclear Information System (INIS)

A stratigraphic and geochemical study of alpine soils, which formed in later Pleistocene (late glacial) and Neoglacial deposits in the Wind River Mountains of western Wyoming, indicates that these soils are affected by air-fall in flux of inorganic pollutants. Arsenic, bromine and antimony appear to have been deposited in surface soils by incorporation of aeolian materials which were presumably transported by winds from industrial sources, including coal-burning operations. As vanadium was not found in surface soils at concentrations above site-specific background levels, oil-fired energy generating stations were not found to be significant sources of surface soil pollution in the region. Acid-rain effects were not observed in the soils. (author) 32 refs.; 2 figs.; 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

Contents: recent trend of battery technologies; alkaline manganese battery with no mercury addition; high capacity zinc-air battery series for hearing aids; characteristics of vanadium-niobium-lithium rechargeable battery; high-energy density lithium-ion rechargeable battery; lithium polymer rechargeable battery: polymer gel electrolyte and electrode; high-capacity ni-cd battery sm120; high-capacity nickel-metal hydride battery; sealed-type batteries for electric vehicles; high-temperature-durable calcium-type battery for automobiles; sealed lead acid batteries for upss; solar cell power unit; solid oxide fuel cell (1); battery management system.

Energy Technology Data Exchange (ETDEWEB)

The ground state masses of thirty-nine neutron-rich nuclei from [sup 51]Ca to [sup 72]Ni have been measured using the Time-of-Flight Isochronous (TOFI) spectrometer. Eight of these masses have been measured for the first time and thirty-one are remeasurements of neutron-rich nuclei previously reported. Good agreement between these results and a previous TOFI experiment was observed except for the most neutron-rich isotopes of vanadium through iron with the present results being more bound and in better agreement with theory. The low binding energy of [sup 68]Ni, as indicated by an unreasonably low two-neutron separation energy, suggests the presence of a high-lying, long-lived isomeric state in this nucleus. (orig.)

International Nuclear Information System (INIS)

This system provides data logging facility for axial profile and dynamic profile experiments during low power physics experiments. The data from Cobalt Self Powered Neutron Detectors (SPNDs) are logged via hardware consisting of PC plug-in cards and data of vanadium SPNDs are logged from the Flux Mapping System (FMS) network (multicast data). The data along with programmable details of the experiment is transferred to an Access Database. The system provides online displays and extensive reports from the Access Database as per the requirement from Reactor Physicists. This paper briefly describes the evolvement of requirements (from the experience of operation of TAPS 4 to TAPS 3), software architecture and design. (author)

International Nuclear Information System (INIS)

From self-consistent band structure calculations using the 'augmented plane wave'(APW) method, the density of states can be decomposed into local partial (according to azimuthal quantum number l) components, the l-character densities. Within the APW formalism the intensity of X-ray emission spectra is determined by radial transition probabilities and l-character densities of such valence states, which reside inside the same atomic sphere as the core vacancy and whose quantum number l differs by +-1 from the one corresponding to the core state. By taking into account lifetime broadening of the core and valence states and also the instrumental broadening the computed spectra (non-metal K-, vanadium K- and Lsub(III)-spectra) agree well with experiment. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

Energy Technology Data Exchange (ETDEWEB)

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd{sub 2}Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd{sub 2}Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.

International Nuclear Information System (INIS)

The magnetic properties of polycrystalline and single crystalline rare earth transition metal silicides Gd_xLa_1_-_xMSi (M =Fe, Co) were investigated. Magnetic measurements have been made in static magnetic fields up to 13 kOe and in pulsed magnetic fields up to 250 kOe in the temperature range from 4.2 to 350 K. The magnetic susceptibility in the paramagnetic state of all the investigated compounds obeys the Curie-Weiss law except for LaFeSi and LaCoSi. Increase of the La content in Gd_xLa_1_-_xFeSi compounds leads to a decrease of the Curie and Neel temperatures, which can be explained by a decrease of positive exchange interactions. (orig.).

International Nuclear Information System (INIS)

Pd was deposited onto Si (111) 7x7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the <110> direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.

International Nuclear Information System (INIS)

Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide technology are addressed. Trends of local and global interconnect scaling are ...

International Nuclear Information System (INIS)

Precipitation-hardened single crystals of a beta (bcc) Ti--40 at. percent V--1.0 at. percent Si alloy were deformed in compression at 77 and 298"0K. The dependence of the yield stress upon aging time at 843"0K for solution-treated crystals shows two maxima which are caused by silicide precipitates. The orientation dependence of the yield stress and of the active macroscopic slip plane were determined as a function of aging time. The solution-treated as well as aged crystals exhibit an asymmetry of both the yield stress and the plane of slip, the degree of asymmetry being larger at 77 than at 298"0K. The asymmetry of slip and yielding is not affected by the presence of precipitation hardening. Results indicate that the effect of the dislocation core structure on dislocation motion is independent of the presence of precipitates. (auth).

Energy Technology Data Exchange (ETDEWEB)

This is a report on the results of creep tests of large extent on samples of welded joints. The possibilities of minimising the reduction in creep strength which occurs are also shown. The range of the pipe welded joints examined extends from superheater pipes 31.8 diam x 5 mm to hot steam pipelines 240 diam x 29 mm. The steels used are: X 20 CrMoV 12-1, X 10 CrMoVNb 9-1 and X 10 CrWMoVnB 9-2. (orig./MM) [Deutsch] Es wird ueber Ergebnisse von in groesserem Umfang laufenden Zeitstandversuchen an Proben aus Schweissverbindungen berichtet. Ausserdem werden Moeglichkeiten aufgezeigt, den eintretenden Zeitstandfestigkeitsabfall zu minimieren. Die Spanne der in Untersuchung befindlichen Rohrschweissverbindungen reicht dabei vom Ueberhitzerrohr diameter 31,8 x 5 mm bis zum Heissdampfleitungsrohr diameter 240 x 29 mm. Die verwendeten Staehle sind: X 20 CrMoV 12 -1; X 10 CrMoVnB 9-1; X 10 CrWMoVnb 9-2. (orig./MM)

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For the first time in scientific literature, in our joint work with Dr. G. Ladwig in 1978 it was established phase portraite of the oxide vanadium-phosphorus system within wide range of P/V ratios from 0.5 to 3.2. Some later those data were confirmed. By investigation of the properties of individual vanadium-phosphorus phases it was also shown that the active component of such catalysts in n-butane oxidation was vanadyl pyrophosphate phase (VO){sub 2}Pr{sub 2}O{sub 7}. From then the conclusion has been evidenced by numerous publications and at present it has been out of doubt practically all over the world. It was hypothized that the unique properties of (VO){sub 2}P{sub 2}O{sub 7} in the reaction of n-butane oxidation could be explained by the presence of paired vanadyl groups and nearness of the distances between neighbouring vanadyl pairs and that between the first and fourth carbon atoms in n-butane molecule. The molecule activation occured ...

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical interdiffusion, they may ...

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The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel electrode (SCE). The MoSi{sub 1.9-2.1} films had the best corrosion ...

International Nuclear Information System (INIS)

Uranium-aluminum alloys with a significant enrichment of uranium with "2"3"3U or "2"3"5U serve as nuclear fuels in research reactors. The quality assurance of this fuel requires, among other things, precise knowledge that all trace metal constituents that affect neutron economy, fuel integrity, and fuel fabrication process parameters are well within the specification limits. Trace metal characterization of "2"3"5U-Al alloy has been carried out by atomic spectrometry. The trace metal constituents of interest are grouped into common metals (silver, boron, calcium, cadmium, cobalt, chromium, copper, iron, magnesium, manganese, molybdenum, sodium, nickel, lead, silicon, tin, titanium, vanadium, tungsten, and zinc) and lanthanides (cerium, dysprosium, europium, gadolinium, holminium, lutetium, samarium, and terbium). The elements yttrium and zirconium are grouped with the latter in view of the chemical separation procedure used. The alloy samples are dissolved in 6 M ...

International Nuclear Information System (INIS)

Superconductivity of binary alloys spanning the A-15 compounds V_3Si, V_3Ge, V_3Ga, and V_3Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V_3P,'' ''V_3B,'' and ''V_3C'' and their pseudobinary formation with V_3Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7"0K was obtained for A-15 V_3Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among pseudobinary alloys imply a rapid variation of the density of states at the Fermi level.

Science.gov (United States)

Certain materials, especially Sn, passivate the rare earth-exchanged Y zeolite (REY) used in petrochemical fluid-cracking catalysts against vanadium degradation caused by V impurities in the feed oil. The mechanism of passivation was investigated here from the standpoint of high-temperature oxide acid-base reaction; i.e., where the controlling factors were considered to be Lewis acid-base reactions between V{sub 2}O{sub 5}, the RE oxides, SnO{sub 2}, etc. Molten salt tests at 680{degree}C showed SnO{sub 2}, presumably because of its acidic nature, to be essentially nonreactive with V{sub 2}O{sub 5} or Na{sub 2}O-V{sub 2}O{sub 5} compounds. A hypothesis was developed to explain how the passivation effect by Sn might result from the unique resistivity of SnO{sub 2} to reaction with V{sub 2}O{sub 5}.

International Nuclear Information System (INIS)

The resonance line shift of a series of A-15 structures (V_3Pt, Vsub(0.76)Ptsub(0.24) and Vsub(0.62)Irsub(0.38) is measured as a function of temperature in the superconducting state. A method will be described to separate the contribution of the diamagnetism of the superconductor (Meissner effect) and that of the Knight shift to this line shift. From the temperature dependence of the Knight shift of the V atoms the sum of the s and d contribution to the Knight shift can be determined. In these three compounds the s and d contributions appear to cancel out nearly. Moreover the temperature dependence of kappa_2 can be calculated from the measurements. The values of kappa_2 extrapolated at T=Tsub(c) are about 70 for these samples. From the obtained sum of Ksub(s) and Ksub(d) and the data of the susceptibility or of the specific heat of these samples Ksub(s) and Ksub(d) can be separated. For all samples Ksub(s)=0.06+-0.005%. Finally it was observed that the quadrupolar interaction ...

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In the course of the research project 'Investigations of trace element concentrations in coal seams with different mineral groups', 31 seam coals of the Ruhr Carboniferous were analysed in order to determine the bending of 14 coal-relevant trace elements to the mineral groups and/or minerals of the coals. Products with different ash content were produced by fluctuation of the seam coals in a laboratory cell. The raw coals and fluctuation component products were analyzed chemically and mineralogically in order to get a quantitative raw material characterisation of the sampled material. Particular interest is taken in the chemical and non-ecological composition of the mineral as ash carrier in the coal and the fluctuation component products, as well as in trace element control. (orig./EF).

Energy Technology Data Exchange (ETDEWEB)

With regard to long-term high-temperature strength, molybdenum is an effective alloying element but rather expensive as well. The author describes its influence on high-temperature strength properties of CrMoV alloyed steel. Besides molybdenum, also vanadium and carbon have an increasing effect on limiting rupture stress which furthermore may be effected by heat treatment, the cooling rate being a dominating factor in this process. To guarantee optimum long-term high-temperature strength properties, a minimum of a least 0.5% Mo and 0.35% V is required. The cooling rate after austentizing must be high enough to enable transformation in the bainitic structure to take place. A two-to-three-hour tempering treatment at about 720/sup 0/C is regarded as an optimum.

Science.gov (United States)

In the course of observing by means of Auger spectroscopy graphite gasification reactions catalyzed by metals, it has been found that in the presence of hydrogen, nickel appears to diffuse from the surface into the bulk of the graphite. When potassium is deposited on graphite, it is volatilized above 400/sup 0/C. Surprisingly the production of methane and carbon dioxide from the reaction of graphite and steam was catalyzed by potassium at as low a temperature as 250/sup 0/C. It has been shown that literature on the alkylation of benzene with synthesis gas is erroneous and that the products reported are due to Lewis acid catalyzed cracking of benzene. A novel cobalt mediated, reversible cleavage of a vinyl-hydrogen bond has been discovered. All products from the thermal decomposition of tetralin have been identified. The stereochemistry of cis-1, 2 dihydrotetralin was determined. In the utilization of the water gas shift reaction as a reducing agent for model coal compounds it has been ...

Energy Technology Data Exchange (ETDEWEB)

The precipitation hardened, ferrite-pearlite medium-carbon steels microalloyed with vanadium (AFP steels) have been developed over the last few years as materials allowing processing by controlled, continuous cooling down from forging temperatures, for achieving benefits such as reducing the number of required heat treatment and working processes and saving expensive alloying materials. Due to their cost-saving advantages, the steels rapidly have been accepted as an alternative material to the quenched and tempered steels and re particularly used for fabrication of automobile parts. Their drawbacks however are the lower yield strength, and low ductility and toughness as compared to the heat-treatable steels. The research project therefore was intended to enhance the properties of the microalloyed, medium-carbon steels and widen their applicability by establishing further and improving existing thermomechanical treatment processes that will considerably improve the ...

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction at the Pd/SiC interface will be discussed. ...

International Nuclear Information System (INIS)

Slurry aluminizing is one method of protecting titanium alloys and intermetallics at temperatures at which oxidation would otherwise significantly degrade mechanical properties. The technique produces a continuous layer of alumina-forming TiAl_3 on exposed surfaces. The influence of composition, film thickness, and diffusion temperature upon the oxidation resistance of these slurry aluminides was studied in cyclic tests to 816degC (1500deg F). Degradation of slurry aluminized #beta#-titanium alloy and #alpha#-Z titanium aluminide intermetallic occurs by localized oxidation at cracks in the coating layer. These cracks are probably due to mismatch of coefficients of thermal expansion between the coatings and substrates. Addition of silicon to the slurry modifies the oxidation behaviour around a crack by introducing a continuous layer of titanium silicide at the boundary of the aluminide coating and substrate, thereby enhancing oxidation resistance. The film thickness ...

Energy Technology Data Exchange (ETDEWEB)

Pd was deposited onto Si (111) 7x7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the <110> direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

International Nuclear Information System (INIS)

Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.

Science.gov (United States)

The isomerization of neopentane has been investigated over the 0.76 wt% Pd/SiO{sub 2} catalyst. It is found that after high temperature reduction (HTR, at 873 K) the selectivity for isomerization is much higher than that after low temperature reduction (LTR, at 573 K). A variety of experiments, including kinetic, chemisorption (O{sub 2}, H{sub 2}, and CO), temperature-programmed desorption of H{sub 2}, and X-ray diffraction, showed that this selectivity enhancement cannot be interpreted in terms of H{sub 2} retention by catalyst. Instead, the formation of Pd-Si compound(s) (most probably Pd{sub 3}Si) during HTR seems immediately responsible for the catalytic behavior of HTR Pd/SiO{sub 2} catalysts. A mechanism is proposed for the Pd-SiO{sub 2} interaction in which Pd atoms (or ions) are incorporated into the silica support (via oxygen vacancies) and a new phase of palladium silicide is formed. Regeneration by an oxygen treatment of the HTR sample does not fully ...

International Nuclear Information System (INIS)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of #tau#_8-Ce_3Pd_4Si_4 (U_3Ni_4Si_4-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), #tau#_1_6-Ce_2Pd_1_4Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for #tau#_1_8-CePd_1_-_xSi_x (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of #tau#_5-Ce_3PdSi_3 (Ba_3Al_2Ge_2-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and #tau#_1_3-Ce_3_-_xPd_2_0_+_xSi_6 (0#<=#x#<=#1, Co_2_0Al_3B_6-type, ...

International Nuclear Information System (INIS)

Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, which is one of the candidate systems for future superconducting qubits, we observed suppression of the ...

Energy Technology Data Exchange (ETDEWEB)

The ash of biomass fuels was analysed in order to identify its inorganic chemical characteristics. The experiments were carried out using different methods of extraction. The accuracy of the measurements was verified by comparative analyses using certified samples. The composition was shown to vary with the fuel type and ash fraction. In the case of arsenic and the toxic heavy metals cadmium, mercury and lead, accumulation factors of 1.4 to 43 were measured in the tissue filter ash. [German] Fuer die Bestimmung der stofflichen Eigenschaften von Biobrennstoffaschen werden neben der fuer die Ermittlung von Stoffbilanzen notwendigen Analyse der Gesamtgehalte, in Abhaengigkeit von der Zielsetzung und den gesetzlichen Vorgaben, unterschiedliche Extraktionsverfahren eingesetzt. Fuer die Gesamtgehaltsbestimmung wurden aus laborinternen Wiederholungsuntersuchungen sowie einem laborexternen Analysenvergleich Kenngroessen fuer die Praezision und Richtigkeit abgeleitet. Waehrend unter ...

Energy Technology Data Exchange (ETDEWEB)

V{sub 2}O{sub 5} based compounds are interesting low potential materials for rechargeable cathodes of lithium electrochemical generators. However, the ionic conductivity and the reversibility of electrochemical cycling of V{sub 2}O{sub 5} are limited by the possibilities of lithium insertion. This work shows that the doping of vanadium pentoxide by a M{sup 3+} trivalent transition element (M Fe, Al, Cr or La) allows to intercalate a more important amount of lithium and to improve the behaviour of the material during cycling. These materials of M{sub 0.11}V{sub 2}O{sub 5.16} formula are obtained by sol-gel synthesis. the electrochemical study of the Fe compound has shown that it is a mixed oxide with a behaviour similar to V{sub 2}O{sub 5}. The maximum capacity is of about 2 F/mole in the case of Fe, Al and Cr compounds and of about 1.7 F/mole in the case of La. The structural evolution of the Fe compound has been followed during the chemical insertion of Li and the ...

Energy Technology Data Exchange (ETDEWEB)

Cathodic arc deposition is an established and industrially applied technique for the formation of nitrides (e.g. TiN); it can also be used for metal oxide thin film formation. A cathodic arc plasma source with the desired cathode material is operated in an oxygen atmosphere of appropriate pressure, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on accelerator components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}-Y{sub ...

Energy Technology Data Exchange (ETDEWEB)

The 1977 version of the Simpson-Puls-Dutton model appears to be the most amenable with respect to utilizing known or readily estimated quantities. The Pardee-Paton model requires extensive calculations involving estimated quantities. Recent observations by Koike and Suzuki on vanadium support the general assumption that crack growth in hydride forming metals is determined by the rate of hydride formation, and their hydrogen atmosphere-displacive transformation model is of potential interest in explaining hydrogen embrittlement in ferrous alloys as well as hydride formers. The discontinuous nature of cracking due to hydrogen embrittlement appears to depend very strongly on localized stress intensities, thereby pointing to the role of microstructure in influencing crack initiation, fracture mode and crack path. The initiation of hydrogen induced failures over relatively short periods of time can be characterized with fair reliability using measurements of the ...

Energy Technology Data Exchange (ETDEWEB)

A solid-state precipitation process was used to prepare superconducting tapes containing an A15 phase, V/sub 3/Ga or Nb/sub 3/Al, in a ductile niobium or vanadium containing BCC matrix. Ingots weighing as large as 30 to 50 gms of V-(14 approx. 19 at. %) Ga and Nb-(13 approx. 22 at. %) Al were prepared by arc-melting, homogenized, quenched, warm-rolled over 99% into tape, and aged at temperatures in the range 600/sup 0/C to 1000/sup 0/C to precipitate the superconducting A15 phase. The features demonstrated by the process are very attractive for practical applications. In the V-Ga system, transmission electron microscopy (TEM) studies revealed the A15 precipitates in an elongated form. However, for the Nb-Al samples, deformed and aged at 750/sup 0/C, TEM studies revealed A15 precipitation in fine equi-axed particles which formed as a semi-continuous network over sub-grain boundaries formed by the recovery of deformation-induced dislocations. In the V-Ga system, the ...

Energy Technology Data Exchange (ETDEWEB)

Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 {omega}/cm up to the annealing temperature as high as 850 deg. C ...

Science.gov (United States)

The title compounds were prepared by arc-melting of the elemental components. Whereas NdPdSi and SmPdSi are already present after the arc-melting, alpha-GdPdSi and alpha-TbPdSi are formed only during the annealing at 800 degC. The four compounds crystallize with the recently reported alpha-YbAuGe type structure, which was refined for alpha-GdPdSi: Pnma, a=2108.0(4) pm, b=433.9(1) pm, c=745.6(1) pm, Z=12, R=0.026 for 1447 structure factors and 62 variable parameters. The lanthanoid atoms are situated between two-dimensionally infinite nets of condensed, puckered hexagons formed by alternating palladium and silicon atoms, with Pd-Si distances varying between 251 and 262 pm. In the third dimension these nets are linked via weak Pd-Pd (300 pm), Pd-Si (283 pm), and Si-Si bonds (261 pm). The refinements of the occupancy parameters suggested that ca. 2% of the palladium sites are occupied by silicon atoms and vice versa. The structural relationships between the two modifications of GdPdSi and ...

Energy Technology Data Exchange (ETDEWEB)

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit remains nearly constant. This compressive stress effect was inhibited by hydrogen ...

International Nuclear Information System (INIS)

Selenium (Se), zinc (Zn), magnesium (Mg), molybdenum (Mo) and vanadium (V) in 28 types of Egyptian common foodstuffs as well as drinking and irrigation water samples were determined using neutron activation analysis (NAA) and atomic absorption spectrometry (AAS). The samples were collected from 74 sites over 13 governorates as well as the Nile river, wells and tap water in the regions of the Nile Delta, Sinai, the east and west desert, and north and south Egypt. These trace elements were chosen according to international references, which show the close relationship of their deficiencies to immunity-related diseases. Calculation values of daily uptake per capita were made with the results of analysis. The results, as calculated per 100 g dry weight, showed that some Egyptian foods are rich in Se including such fish (0.94 #mu#g), sesame (0.88 #mu#g), beef meat (0.48 #mu#g), instant tea (0.42 #mu#g), mushroom (0.34 #mu#g) and eggs (0.3 #mu#g), whereas the vegetables ...

Science.gov (United States)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of tau{sub 8}-Ce{sub 3}Pd{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), tau{sub 16}-Ce{sub 2}Pd{sub 14}Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for tau{sub 18}-CePd{sub 1-x}Si{sub x} (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of tau{sub 5}-Ce{sub 3}PdSi{sub 3} (Ba{sub 3}Al{sub 2}Ge{sub 2}-type, Immm; a=0.41207(1), b=0.43026(1), ...