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This paper presents recent results concerning the chemical and electrochemical synthesis, the electrochemical properties and the characterization of two new families of amorphous oxides of formula Li{sub x}MVO{sub 4} (1

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A process for the generation of halogens from halide-containing solutions includes the step of conducting electrolysis of the solutions in an electrolytic cell having a platinum based amorphous metal alloy anode.

UK PubMed Central (United Kingdom)

Improving the anti-demineralizing/remineralizing and mechanical properties of amorphous calcium phosphate (ACP) composites has been the focus of our recent research. In this study, an ethoxylated...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

The monoanionic bidentate Schiff base, N-(phenolyl)-benzaldimine (HL), has been employed to synthesize a new vanadium(IV) complex of general composition [VO(L)2] (where L = O, N donor of Schiff base). The ligand and complex have been fully characterized by elemental analyses, molar conductance data, FT-IR, 1H- and 13C-NMR, and UV-Vis spectroscopies. Oxidation of alcohols to their corresponding aldehydes and ketones was conducted by this complex catalyst using Oxone as oxidant under biphasic reaction conditions (CH2Cl2/H2O) and tetra-n-butylammonium bromide as phase transfer agent under air at room temperature.

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Alumina (94 and 99.8% grade compositions) was brazed directly to itself with gold-based active brazing alloys (ABA's) containing vanadium additions of 1,2 and 3 weight percent. The effects of brazing conditions on the joint properties were investigated. Wetting behavior, interfacial reactions, microstructure, hermeticity and tensile strength were determined. Wetting was fair to good for the ABA and base material combinations. Microanalysis identified a discontinuous Al-V-O spinel reaction product at the alumina-braze interface. Tensile strength results for 94% alumina were uniformly good and generally not sensitive to the vanadium concentration, with tensile values of 85-105 MPa. There was more variability in the 99.8% alumina strength results, with values ranging from 25-95 MPa. The highest vanadium concentration (3 wt. %) yielded the highest joint strength for the brazed ...

International Nuclear Information System (INIS)

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to ...

International Nuclear Information System (INIS)

Recent advances made in the area of amorphous and nanocrystalline alloys exhibiting high saturation inductions are reviewed. A new chemical composition was identified that achieves a saturation induction of 1.64 T in an iron-based amorphous alloy. This alloy, when used in electrical transformers, shows a much improved performance over the existing amorphous alloy. Nanocrystalline FeCoCuNbSiB alloys are found to have saturation induction levels reaching 1.7 T. These materials are suited for use in sensors and inductors carrying large currents. Some of these nanocrystalline alloys show a BH squareness ratio exceeding 90%, which can be utilized in pulse power devices. Recent developments in the applications of these materials are also pointed out.

Energy Technology Data Exchange (ETDEWEB)

Some N-containing or S-containing organic substances and some acetylenic alcohols were tested as inhibitors of the corrosive attack suffered by Fe-based metallic glasses in deaerated 0.1 N sulfuric acid (H{sub 2}SO{sub 4}) solution at 25 C. It was verified that the specific action these compounds exerted on the corrosion process of the amorphous alloys was similar to the one these compounds exerted on polycrystalline iron. The most efficient substances were those containing a sulfur atom with available lone pairs, which chiefly inhibited the anodic reaction of both metal specimens. Owing to the chemical and physical homogeneity of the amorphous alloy, the chemisorbed inhibitor film that formed on the glassy surface was more stable and protective than that formed on the polycrystalline iron.

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

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In order to investigate the role of amorphous SiO{sub 2} particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO{sub 2} was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of {gamma}-phase and amorphous nano-SiO{sub 2} particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO{sub 2} particles were uniformly distributed in the alloying layer and still kept the ...

Energy Technology Data Exchange (ETDEWEB)

Safety and environmental assessments have been made of conceptual fusion power plant designs employing silicon carbide composites (SiC/SiC) as the first wall and blanket structure material. These have used similar analysis methods to earlier studies of designs based on vanadium alloy or low-activation martensitic steel, allowing direct comparisons. The very low short-term activation of silicon carbide results in an almost insignificant level of decay heat in postulated loss of coolant accidents, and a lower {gamma}-dose rate on the timescale of relevance to handling for maintenance operations. However on the longer time-scale, of interest in possible recycling operations, decommissioning and waste management, SiC/SiC appears to perform no better than vanadium alloy or low-activation martensitic steel, due in part to the activation of impurities in a realistic composition. Furthermore, its increased neutron transparency may ...

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 digit lower defect density than the ...

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

International Nuclear Information System (INIS)

Russian (1977). USSR Oralov, TA Malyshev, VP Buketov, EA AN

International Nuclear Information System (INIS)

A ternary nickel-base alloy Ni-W-B has been developed for surface corrosion and wear resistance to replace chromium plating, which uses environmentally hazardous solutions. The deposition conditions used an alkaline bath and insoluble anodes. The as-deposited alloy typically contains 40 wt% W and 1 wt% B and has an amorphous or partially amorphous structure. These deposits compare favorably with hexavalent chromium deposits in throwing power, color uniformity, and reflectivity. The corrosion resistance of Ni-W-B alloy was compared with hexavalent chromium and electroless nickel deposits in a variety of acids, including hydrochloric, sulfuric, fluoroboric, and phosphoric. In all cases, best results were obtained with the Ni-W-B deposits.

Energy Technology Data Exchange (ETDEWEB)

In order to understand the anodic behaviour of Al--Mo and Al--W amorphous alloys in the borate buffer electrolyte, samples of these alloys were polarized galvanostatically. The resultant anodic films were thicker than the passive films formed during potentiodynamic polarization enabling detailed examination of the films and alloy substrates by surface analytical methods. AES investigations suggest that the anodic films formed at low and moderate voltages on Al--Mo or Al--W amorphous alloys consist of Al-oxide, whereas refractory metals remain unoxidized and enriched at the film/substrate interface. Molybdenum and tungsten act as 'dissolution moderators', restraining the substrate dissolution process at the film/substrate interface. However, after anodization at high voltages (50 V), AES revealed the presence of an oxidized refractory metal in the inner part of the anodic film. Based on these results of ...

International Nuclear Information System (INIS)

Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, which is one of the candidate systems for future superconducting qubits, we observed ...

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A heat resistant nickel base alloy which is excellent in not only hot and cold workability but also high temperature strength properties and which also possesses satisfactory oxidation resistance. The nickel base alloy consists essentially of 0.001-0.15 percent carbon, 0.0005-0.05 percent calcium, 20.0-126.0 percent chromium, 4.7-9.4 percent cobalt, 5.0-16.0 percent molybdenum, 0.5-4.0 percent tungsten, with the total of molybdenum plus tungsten being from 9.0 to 16.5 percent, and the balance nickel and inevitable impurities. The alloy may further contain one selected from the group consisting of (1) 0.3-1.5 percent aluminum and 0.1-1.0 percent titanium, (2) 0.001-0.30 percent at least one of yttrium and rare earth elements, and (3) 0.001-1.0 percent at least one of niobium, vanadium and tantalum, whereby the aforementioned characteristics are further enhanced.

Energy Technology Data Exchange (ETDEWEB)

The oxidative dehydrogenation (ODH) of light alkanes is an alternative way for the production of olefins. A wide variety of catalytic systems has been investigated. Vanadium oxide based catalysts were described in the literature as effective catalysts for the ODH of propane. The catalytic activity and selectivity depend on the kind of support material, the kind of dopants and the formation of complex metal oxide phases. In recent papers it was claimed that both orthovanadate and/or pyrovanadate species are selective for the ODH of propane. Niobia based materials were investigated as catalysts for acidic and selective oxidation type reactions. In the ODH of propane niobia exhibited a high selectivity to propene but the conversion of propane was low. V{sub 2}O{sub 5}-Nb{sub 2}O{sub 5} catalysts proved to be catalytically active and selective and showed no formation of oxygenates. In the present study the influence of the ...

British Library Electronic Table of Contents (United Kingdom)

The mechanism of abrupt increase of the giant magneto impedance (GMI) ratio in the ion irradiated Co-based amorphous ribbon has been investigated. The grazing incident X-ray diffraction and transmission electron microscope were used to characterize the samples before and after ion irradiation. The GMI-ratio considerably increased in the ion irradiated samples and the GMI response showed strong dependence on the driving frequencies. The Barkhausen noise (BN) signals are increased for the Ar ion irradiated sample with dose of 1x10^1^7 ion/cm^2. The results are interpreted in terms of GMI variation associated with domain wall dynamics.

Science.gov (United States)

Superconductivity of binary alloys spanning the A-15 compounds V/sub 3/Si, V/sub 3/Ge, V/sub 3/Ga, and V/sub 3/Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V/sub 3/P,'' ''V/sub 3/B,'' and ''V/sub 3/C'' and their pseudobinary formation with V/sub 3/Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7/sup 0/K was obtained for A-15 V/sub 3/Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among pseudobinary alloys imply a rapid variation of ...

International Nuclear Information System (INIS)

The resonance line shift of a series of A-15 structures (V_3Pt, Vsub(0.76)Ptsub(0.24) and Vsub(0.62)Irsub(0.38) is measured as a function of temperature in the superconducting state. A method will be described to separate the contribution of the diamagnetism of the superconductor (Meissner effect) and that of the Knight shift to this line shift. From the temperature dependence of the Knight shift of the V atoms the sum of the s and d contribution to the Knight shift can be determined. In these three compounds the s and d contributions appear to cancel out nearly. Moreover the temperature dependence of kappa_2 can be calculated from the measurements. The values of kappa_2 extrapolated at T=Tsub(c) are about 70 for these samples. From the obtained sum of Ksub(s) and Ksub(d) and the data of the susceptibility or of the specific heat of these samples Ksub(s) and Ksub(d) can be separated. For all samples Ksub(s)=0.06+-0.005%. Finally it was observed that the quadrupolar interaction ...

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

British Library Electronic Table of Contents (United Kingdom)

In the present work, bulk amorphous and nanocrystalline Al83Fe17 alloys were obtained by consolidation of mechanically alloyed powders. Mechanical alloying of Al-17% Fe powder mixture yielded powder with an amorphous structure. Thermal behaviour of the milling product was examined using differential scanning calorimetry. This investigation revealed that the amorphous phase crystallised above 380^oC. The amorphous powder was compacted under a pressure of 7.7GPa in different conditions: at 380^oC for 600s and at 1000^oC for 180s. Structural investigations of the bulk material revealed that the amorphous structure was retained after consolidation process applied at 380^oC. Compaction under high pressure at 1000^oC caused crystallisation of the amorphous phase and appearance of metastable nano...

International Nuclear Information System (INIS)

The electron-phonon coupling constant lambda has been calculated for vanadium. The electron energy bands and wave functions were obtained from a model augmented plane wave muffin-tin potential. The electron-phonon matrix elements were evaluated using the rigid-ion approximation and the measured phonon spectra. The results show that lambda is strongly affected by d-f scattering.

International Nuclear Information System (INIS)

Mechanical properties of vanadium, irradiated with fast neutrons up to 8.6x10"-"4 dpa depending on postirradiation annealing temperature, are studied. It is shown that radiation-annealing hardening (RAH) is observed at 300 deg C, which agrees with earlier performed studies. It is first stated that RAH is accompanied by plasticity decrease. Phenomenological model permitting to explain RAH dependence on irradiation temperature and dose and also on content of chemically active alloying impurities is suggested.

British Library Electronic Table of Contents (United Kingdom)

Soluble starch?based biodegradable and microporous microspheres (SDM-Ms) were prepared by emulsion chemical cross-linking technique using trisodium trimetaphosphate (TSTP) as the cross-linker. The resultant amorphous SDM-Ms were excellently identified by scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The internal rupture and surface-controlled erosion were the predominant degradation mechanisms for SDM-Ms. The obtained SDM-Ms were applied to adsorb coix seed oil (CSO) by immersing method. The adsorption capacity of CSO within SDM-Ms was determined, namely 0.5238?g/g, and the thermal stability was shown higher than that of the free CSO. A burst release appeared in the second hour, followed by controlled release. Diffusion, d...

Science.gov (United States)

For a long time, the skeleton was seen as an amorphous tissue of little biological interest. But

International Nuclear Information System (INIS)

The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and their interatomic potential(s), with continuum mechanics ...

International Nuclear Information System (INIS)

Tungsten (W) coating on fusion candidate V-4Cr-4Ti (NIFS-HEAT-2) substrate was demonstrated with plasma spray process for the purpose of applying to protection of the plasma facing surface of a fusion blanket. Increase in plasma input power and temperature of the substrate was effective to reduce porosity of the coating, but resulted in hardening of the substrate and degradation of impact property at 77 K. The hardening seemed to be due to contamination with gaseous impurities and deformation by thermal stress during the coating process. Since all the samples showed good ductility at room temperature, further heating seems to be acceptable for the vanadium substrate. The fracture stress of the W coating was estimated from bending tests as at least 313 MPa, which well exceeds the design stress for the vanadium structure in fusion blanket. (author)

International Nuclear Information System (INIS)

A method is described for determination of aluminium, cadmium, cobalt, chromium, copper, calcium, magnesium, sodium, potassium, manganese, nickel, lead, strontium, zinc, titanium and vanadium in iron ore. After dissolution, a 1 gram sample of iron ore is applied to a column of AGI-X8 anion exchange resin (chloride form), in 100 ml of 7M HCl. Aluminium, chromium, calcium, magnesium, sodium, potassium, manganese, nickel, lead, strontium, titanium and vanadium are eluted with 7M HCl; iron, copper and cobalt are eluted with 0.5M HCl; cadmium and zinc are eluted with 2M HNO_3. Iron is subsequently removed from copper and cobalt by a solvent extraction with methyl isobutyl ketone. The elements are determined in the eluates by atomic absorption spectrometry, except for titanium and vanadium, which are determined spectrophotometrically.

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

CERN Document Server

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and ...

Energy Technology Data Exchange (ETDEWEB)

Vanadium alloys exhibit important advantages as a candidate structural material for fusion first wall/blanket applications. These advantages include fabricability, favorable safety and environmental features, high temperature and high wall load capability, and long lifetime under irradiation. Vanadium alloys with (3-5)% chromium and (3-5)% titanium appear to offer the best combination of properties for first wall/blanket applications. A V-4Cr-4Ti alloy is recommended as the reference composition for the ITER application. This report provides a summary of the R&D conducted during 1994 in support of the ITER Engineering Design Activity. Progress is reported for Vanadium Alloy Production, Welding, Physical Properties, Baseline Mechanical Properties, Corrosion/Compatibility, Neutron Irradiation Effects, Helium Transmutation Effects on Irradiated Alloys, and the Status of Irradiation Experiments. Separate abstracts have been ...

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Vanadium doped manganese bi-oxide has been obtained from a solution containing both cations. The X-ray diffraction of this material indicates a rutile-type phase but the enlargement of some lines supports the existence of several lattice defects. Also the particle size of the doped material is significantly smaller than the one of the non-doped material obtained in the same conditions. The presence of pentavalent vanadium inside the lattice leads to a small amount of trivalent manganese. Electron microscopy shows the existence of defects which have a tendency of becoming well-ordered and to stabilize a sur-structure. At ambient temperature, the electrochemical behaviour of doped manganese bi-oxide is greatly improved when compared to the non-doped phase. This behaviour is due to the presence of numerous lattice defects and to the smaller size of crystallites. In polymer batteries, the behaviour is similar the one of the non-doped material for ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

We present results from ab-initio electronic-structure calculations of mechanical properties of the rhombohedral phase of vanadium reported in recent experiments (R Ia), and other predicted high-pressure phases (R Ib and bcc), focusing on properties relevant to dynamic experiments. We find that of the three transitions the largest volume collapse (1.3%) is for the R Ia to R Ib transition. Calculations of the single crystal and polycrystal elastic constants reveal a remarkably small discontinuity across the phase transitions even at zero temperature where the transitions are first order.

International Nuclear Information System (INIS)

A variety of advanced controlled rolling techniques have been developed to improve toughness, strength and weldability of niobium-steels. To achieve optimum properties, control of prior stage rolling conditions and accelerated cooling are needed. In low carbon steel, the addition of niobium results in a greater increase in tensile strength than that of vanadium without a loss of toughness. At the same strength level, niobium-steel has less susceptibility to weld cracking and good toughness in the HAZ of its weldments than similar vanadium steels. Separation and formability of niobium steels are also discussed.

Energy Technology Data Exchange (ETDEWEB)

In situ fracture studies on thin-film NiTi intermetallic compounds have been carried out in the high-voltage electron microscope at Argonne National Laboratory. Local stress-induced amorphization of regions directly in front of moving crack tips has been observed under tensile loading conditions. The stress-induced amorphization at crack tips exhibits a temperature dependence similar to that of ion-induced amorphization of NiTi. The upper limiting temperature for stress-induced amorphization is the same as that for ion-induced amorphization of crystalline NiTi and for amorphous phase formation during ion-beam mixing of Ni and Ti multilayer specimens. This upper limiting temperature of 600K is also the lowest temperature at which stress-induced amorphous phase crystallizes during isothermal annealing. This isothermal crystallization ...

International Nuclear Information System (INIS)

The authors present differential scanning calorimetry (DSC) and in situ Moessbauer spectroscopy results for Metglas ribbons, to which different heat treatments were made. The Curie temperature of the amorphous phase is determined and the evolution of the magnetic field of this phase is studied as a function of temperature

Energy Technology Data Exchange (ETDEWEB)

Experiments were conducted which established that the higher passivating capacity of Ni/sub 60/Nb/sub 40/ alloys in the amorphous state and higher efficiency of the anodic process of generation of chlorine (2 N NaCl + HCl to pH = 0) in comparison with the crystalline state are determined by higher homogeneity and density of the passive films formed on the amorphous alloy and by higher electron conduction which depends directly on the difference in the structure of the passive films formed on the alloys in the amorphous and crystalline states.

International Nuclear Information System (INIS)

Single phase amorphous Al_xHf_1_0_0_-_x alloys with a wide amorphization range (33#<=#x#<=#75) were synthesized by the solid-state interdiffusion of pure polycrystalline Al and Hf powders at room temperature using a rod-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders were investigated by means of X-ray diffraction, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling (0-173 ks) are intermixed to form amorphous phase(s) upon heating to about 980 K by so-called thermally assisted solid-state amorphization (TASSA). The amorphization heat formation for the binary Al_xHf_1_0_0_-_x system via TASSA, ...

Science.gov (United States)

Neutron scattering techniques have been used to measure the static structure and magnetic excitations in amorphous magnets. Sum rules and computer models are used to discuss the relationship between the static disorder and the shape of the excitation spectrum. Polarized beam measurements of chi''(Q,E) are compared to analytical theories and computer calculations for the magnetic excitations in amorphous ferromagnets.

Energy Technology Data Exchange (ETDEWEB)

Density functional theory (DFT) calculations using plane-wave methods were performed for Li2TMPO4F, LiTMPO4F, and TMPO4F (TM=V, Mn, Fe, Co, Ni) to address their feasibility as high-voltage cathode materials for Li ion batteries. We computed their structures, average open circuit voltages, and thermal stabilities for step-wise lithiation/delithation (discharge/charge) reactions. The calculations suggest that associated unit cell volume changes are sufficiently small on average that they should not be a significant detriment to the mechanical stability of the cathode. In the nickel case, the calculated volume change deviates from the series by increasing during the first delithiation step. Furthermore, the volume increases for all these materials during the second delithiation step. It appears that the relative volume expansion in the series during delithiation is directly correlated to the degree of d-p rehybridization. Predicted average open circuit voltages indicate that these ...

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model ...

International Nuclear Information System (INIS)

Fe-Cr amorphous films have been formed by both in situ evaporation of multilayered films and ion beam mixing in a target chamber of a 200 keV implanter. The effects of Cr content and ion irradiation on the amorphization of films were examined by transmission electron microscope (TEM). Corrosion of film was investigated by means of a potential dynamic polarization. Corrosion resistance of amorphous film in 0.5 mol H-2SO-4 solution is considerably increased than that of pure iron. Using X ray photoelectron spectroscopy (XPS) corrosion resistance in atmosphere of amorphous Fe-Cr passive films formed by P"+ mixing was studied. Results show that the richness of Cr and P exist at the surface of Fe-Cr film.

International Nuclear Information System (INIS)

We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous ...

International Nuclear Information System (INIS)

Thermochromic tungsten-doped vanadium dioxide (VO2) powders were successfully synthesized by thermal reduction using V2O5 as a vanadium precursor. The products were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The results indicated that W was successfully doped into the crystal lattice of VO2 matrix, and prepared tungsten-doped VO2 had a rod-like morphology. The effects of reducing temperature and annealing temperature on the crystallographic structures were also discussed. The phase transition temperature (Tt) of VO2 could be simply tuned by changing the doping concentration of tungsten. When the doping concentration was 1.58 mol%, the Tt could be reduced to 37.8 oC from initial 69.5 oC, suggesting that tungsten-doped VO2 possesses prominent thermochromic properties and optical switching characters. It has shown that this ...

Environmental Research Database

ObjectivesTo extend a set of work carried out previously at Royal Holloway, the Natural History Museum and elsewhere, and instigated, to a considerable extent, by the PI to determine~%~~%~1. whether there is any significant difference in the performance of clay minerals in the presence of leachates generated by wastes from different cultures and/or deposited in different climates;~%~~%~2. what causes some, if not all, clay minerals to aggregate after reaction with landfill Ieachate;~%~~%~3. the permeabili [continued...]DescriptionAround 1995 it was shown that that interactions between clay minerals and landfill leachate destroy the clay mineral lattice, leading to reduced liner permeability. Recent work indicates that the effect may be caused by dissolution of silica and deposition of amorphous alumina. Most work to date has been done using synthetic and natural 'British' teachates. The research in Melbourne ...

Science.gov (United States)

In an era of unprecedented technological advancement and economic expansion, construction practice continues to evolve but construction education has not changed appreciably since the 1990s. This schism has prompted industry, government, and other key constituents to question the relevancy and efficacy of current programs. The Accreditation Board for Engineering and Technology (ABET) Engineering Criteria 2000 and the American Council for Construction Education (ACCE) emphasizes outcomes over process, and provides an opportunity for stakeholders to help universities define educational goals and objectives and design a curriculum to meet the desired outcomes. While the need for curriculum modification has been acknowledged, the industry position was amorphous and anecdotal and therefore difficult to address. Qualitative methodologies such as formal surveys and structured interviews can be used to capture and quantify industry expectations of the needed attributes ...

Energy Technology Data Exchange (ETDEWEB)

The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. {copyright} 2001 ...

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Petroleum, known to be a source of a vast variety of organic compounds, is also a depository of valuable mineral components. Vanadium and nickel are the most important metal components of crude petroleum, with their concentrations reaching a few tenths of a percent. Their percentage increases 2- to 5-fold in the hydrocarbon products. The vanadium content in processed petroleum products is given. Therefore, the extraction of metals from petroleum is becoming an increasing important task. At present, there is no petroleum processing technology aimed solely at obtaining organic components. The occurrence of metals and other trace elements in petroleum and hydrocarbon products is discussed on the basis of available literature and experimental data. Techniques for isolating metals from petroleum and hydrocarbon products and their quantitative determination are considered.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the ...

Energy Technology Data Exchange (ETDEWEB)

A method of preparing a high temperature superconductor from an amorphous phase. The method involves preparing a starting material of a composition of Bi.sub.2 Sr.sub.2 Ca.sub.3 Cu.sub.4 Ox or Bi.sub.2 Sr.sub.2 Ca.sub.4 Cu.sub.5 Ox, forming an amorphous phase of the composition and heat treating the amorphous phase for particular time and temperature ranges to achieve a single phase high temperature superconductor.

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The corrosion behaviour of the stainless steels 304, 316 Ti, 25Cr-20Ni-Mo-Ti, nickel base alloys Hastelloy C4, Inconel 625, Incoloy 800, Ti and Ti-0.2% Pd alloy has been studied in the aerated or deaerated solutions at 20/sup 0/C and 90/sup 0/C whose compositions are representative of interstitial ground waters: granitic or clay waters or salt brine. The electrochemical techniques used are voltametry, polarization resistance and complexe impedance measurements. Electrochemical data show the respective influence of the parameters such as temperature, solution composition and dissolved oxygen, addition of soluble species chloride, fluoride, sulfide and carbonates, on which depend the corrosion current density, the passivation and the pitting potential. The inhibition efficiency of carbonate and bicarbonate activities against pitting corrosion is determined. In clay water at 90/sup 0/C, Ti and Ti-Pd show very high passivation aptitude and a broad passive potential ...

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Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with ...

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

International Nuclear Information System (INIS)

The separation, concentration, and determination of trace elements in iron ores are described. After the sample has been dissolved, the iron is separated by liquid-liquid extraction with a liquid cation-exchanger, di-(2-ethylhexyl) phosphoric acid. The trace elements aluminium, cadmium, calcium, chromium, cobalt, copper, lead, magnesium, manganese, mercury, potassium, sodium, vanadium, and zinc are determined in the aqueous phase by atomic-absorption spectrophotometry.

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The surface properties of copper-refractory metal (CU-RF) alloy bodies are modified by heat treatments which cause the refractory metal to form a coating on the exterior surfaces of the alloy body. The alloys have a copper matrix with particles or dendrites of the refractory metal dispersed therein, which may be niobium, vanadium, tantalum, chromium, molybdenum, or tungsten. The surface properties of the bodies are changed from those of copper to that of the refractory metal.

International Nuclear Information System (INIS)

Heterodyne detection with a point-contact Josephson junction has been investigated both experimentally and theoretically. The measured performance of the device at 36 GHz is in good agreement with the theory. By operating vanadium point contacts at 1.4 K, the authors have achieved a single-sideband (SSB) mixer noise temperature of 54 K with a conversion gain of 1.35 and a signal bandwidth on the order of 1 GHz. A potentially impressive performance for these devices at submillimeter wavelengths can be extrapolated from the results.

International Nuclear Information System (INIS)

The author discusses the accelerated aging tests performed using Hondo and Maya as aging resids with a commercial large pore hydrotreating catalyst. The results from these tests were compared with those obtained under a normal full life test. The test resid was a sample of a typical refinery charge and the activities for sulfur and vanadium removal were determined at 720"0F after successive brief periods of exposure to the heavier oils.

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The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

Energy Technology Data Exchange (ETDEWEB)

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

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Density changes in amorphous Pd{sub 80}Si{sub 20} during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%.

Science.gov (United States)

The oxidative dehydrogenation (OXDH) of n-butane, 1-butene, and trans-2-butene on different vanadia catalysts has been compared. MgO, alumina, and Mg-Al mixed oxides with Mg/(Al + Mg) ratios of 0.25 and 0.75 were used as supports. The catalytic data indicate that the higher the acid character of catalysts the lower is both the selectivity to C{sub 4}-olefins from n-butane and the selectivity to butadiene from both 1-butene or trans-2-butene. Thus, OXDH reactions are mainly observed from n-butane and butenes on basic catalysts. The different catalytic performance of both types of catalysts is a consequence of the isomerization of olefins on acid sites, which appears to be a competitive reaction with the selective way, i.e., the oxydehydrogenation process by a redox mechanism. Infrared spectroscopy data of 1-butene adsorbed on supported vanadium oxide catalysts suggest the presence of different adsorbed species. O-containing species (carbonyl and alkoxide species) ...

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A 9Cr-1Mo steel with properties improved over other ferritics in the ranges from 9 to 12% Cr and 1 to 2% Mo and over the widely used 2 1/2 Cr-1Mo steel has recently been developed. The main changes in the modified alloy, compared with the standard alloy, include: addition of niobium and vanadium, to improve the alloy's elevated-temperature strength properties; a specified range for each element; and a specification for nitrogen, which is not listed for the standard 9Cr-1Mo. Microstructural work has indicated that the improved strength of the modified alloy comes from two factors: (1) fine M/sub 23/C/sub 6/ precipitate particles nucleate on Nb/C, N, which comes out first during the heat treatment; and (2) the vanadium enters M/sub 23/C/sub 6/ and retards its growth at the service temperature. Mechanical properties discussed were Charpy-impact, tensile, and creep properties. Other properties included were: thermal expansion coefficient, ...

CERN Document Server

The aim of this work was to study the possibility of producing a fast switching optical thin film device to react to laser radiation in the visible/near infrared region of the spectrum. The switching mechanism was to be thermally driven. A computer program was written to enable the effects of changes of the refractive index of a component of a multilayer thin film stack to be modelled. Attempts to use the phase transition in vanadium dioxide were unsuccessful because, in the spectral region of interest, the 'open-state' absorption was too great. A class of materials known as 'the bronzes' was identified as being potentially useful. Attempts were made to produce thin films of bronze compounds of vanadium, tungsten and molybdenum by the techniques of conventional thermal evaporation and laser ablation for further studies. The former technique appeared to suffer from problems of decomposition of the source material. The latter technique showed ...

Science.gov (United States)

Amorphous Pd/sub 80/Si/sub 20/ was irradiated with fast neutrons (>1 MeV) to a fluence of 5 x 10/sup 20/ neutrons/cm/sup 2/. X-ray scattering intensities were measured before and after the irradiation with monochromatic Cu-K..cap alpha../sub 1/ rays. Scattered intensities for s>0.4 A/sup -1/ (s=2 sintheta/lambda) proved unaffected, while intensities were found remarkably enhanced for s<0.4 A/sup -1/ after the irradiation, i.e., in the small-angle region and the leading edge of the first halo. The results are discussed in relation to the structural anomalies in amorphous solids.

International Nuclear Information System (INIS)

#beta#-sialon ceramics of equal overall compositions but containing amorphous, partly crystalline and almost completely crystalline intergranular phase(s) have been oxidized in oxygen at 1350 deg C for 20 hours. The obtained weight gain curves do not follow the parabolic rate law (#DELTA#W/A_0)"2= k_pt + #beta#. To the extent that crystallization occurs in the oxide scale during the oxidation experiment, the amorphous cross section area through which oxygen most easily diffuses will decrease with time. A brief description of this new rate law is given, and the obtained oxidation curves will be discussed within that framework. 4 refs., 2 tabs., 2 figs.

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Using the method of high resolution electron microscopy (HEM) the shape and structure of powder particles of elementary amorphous boron, prepared by plasmochemical reduction of boron trichloride by hydrogen before and after their heat treatment in vacuum of approximately 1 x 10 SPa at the temperature of approximately 800 deg C for 30 min, have been studied. It is established, that ultradispersed particles of amorphous boron present flat formations (discs) of stable configurations, composed of several icosahedrons (structural elements); their growth during heat treatment takes place first in habitus plane without far order formation, and then, after attaining the diameter of approximately 500 A, the process of three-dimensional crystallization starts, which leads to the formation of crystal lattice of boron US -rhombohedric modification.

CERN Document Server

A non-resonant RF cavity loaded with amorphous alloy cores has been designed and tested. The cavity has a re-entrant structure loaded with 8 amorphous alloy toroidal core and its characteristic impedance is designed as 450 Omega . The RF power is fed by 1 kW solid state amplifier using a step-up transformer with 1:9 impedance ratio. In the high power test, an accelerating gap voltage of more than 900 V was measured with input power of 1 kW in the frequency range of 1 to 10 MHz. The voltage standing wave ratio (VSWR) was less than 2.0. The results prove that the cavity may be used successfully within a compact proton synchrotron for a cancer therapy facility. (3 refs).

International Nuclear Information System (INIS)

The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95

Energy Technology Data Exchange (ETDEWEB)

This paper reports the presence of face centered cubic cobalt precipitates inside tungsten carbide in nanocomposite of WC-Co synthesized by spray conversion processing. EDS was used to identify the presence and micro-diffraction was employed to determine the nature of the precipitates. There is entrapment of cobalt in tungsten carbide during the spray conversion process used to form WC/Co powder. During consolidation, at high temperatures, the cobalt attains enough mobility to precipitate inside WC. A vanadium containing compound was seen at the interfaces in samples which incorporated VC as a grain growth inhibitor. (orig.)

Energy Technology Data Exchange (ETDEWEB)

The present results indicate that maximum selectivity to acrylic acid can be reached over V-P-Zr-O catalysts. When the hydrocarbon concentration is 5.1 vol.% the selectivity is about 30% at quite high paraffin conversion. Conclusively, some explanations to the observed facts can be given. The V-P-O catalyst promotion with lanthanum by means of mechanochemical treatment is distinguished by the additive uniform spreading all over the matrix surface. Such twophase system is highly active in propane conversion (lanthanum oxide) and further oxidation of the desired products. The similar properties are attributed to V-P-Bi-La-O catalyst. Bismuth, tellurium and zirconium additives having clearly defined acidic properties provoke the surface acidity strengthening and make easier desorption of the acidic product (acrylic acid) from the surface lowering its further oxidation. Additionally, since bismuth and zirconium are able to form phosphates and, according to, to create space limitations for ...

Energy Technology Data Exchange (ETDEWEB)

Out of the R and D of mesoscopic metal group composite materials, the paper described the fiscal 1997 results. In the in-situ method as a composite material making method, elucidated to some degree were chemical composition of Fe-C-Cr-V-Nb-Mo-W-Ni base multi-dimensional alloys, and wear resistance and oxidation resistance of MC type carbide dispersion multi-phase texture crystallizing as primary crystal and eutectic. In the composite material making with ceramic fiber and alloy by the pressure infiltration method, the paper clarified the texture formation mechanism in solidification/heat treatment by a combination of Al alloys and alumina long fiber, and the relation between fiber configuration and wear resistance. By MA and MG methods as the powder metallurgy composite material making method, a composed body of {alpha}-stainless steel of Fe-12%Cr composition and M23C6 of 40-90vol% are designed for alloy composition, and powder of amorphous or ...

International Nuclear Information System (INIS)

Ultra-low pure Pt-based electrodes (0.04-0.12 mg_P_t/cm"2) were prepared by dual ion-beam assisted deposition (dual IBAD) method on the surface of a non-catalyzed gas diffusion layer (GDL) substrate. Film thicknesses ranged between 250 and 750 A, these are compared with a control, a conventional Pt/C (1.0 mg_P_t_(_M_E_A_)/cm"2, E-TEK). The IBAD electrode constituted a significantly different morphology, where low density Pt deposits (largely amorphous) were formed with varying depths of penetration into the gas diffusion layer, exhibiting a gradual change towards increasing crystalline character (from 250 to 750 A). Mass specific power density of 0.297 g_P_t/kW is reported with 250 A IBAD deposit (0.04 mg_P_t/cm"2 for a total MEA loading of 0.08 mg_P_t/cm"2) at 0.65 V. This is contrasted with the commercial MEA with a loading of 1 mg_P_t_(_M_E_A_)/cm"2 where mass specific power density obtained was 1.18 g_P_t/kW (at 0.65 V), a value typical of ...

Energy Technology Data Exchange (ETDEWEB)

Samarium cobaltite ceramic perovskites, with and without platinum particles dispersion, are possible candidates as electrode for electrochemical conversion of hydrocarbon and for intermediate temperature solid oxide fuel cells (ITSOFC). In this work, samarium cobaltites were synthesized by the combustion method using cobalt, and samarium nitrates as cation precursors and urea as fuel. For containing-platinum compositions Pt (II) acetyl acetonate was also employed as precursor. The effect of Sr on the phase formation and its electrical behavior is also studied. Specific surface area (BET), SEM-EDX, TEM and XRD analysis are used to characterize the powders obtained. Powders were pressed into pellets and sintered in air in the temperature range of 1200 -1400 C. Electrical impedance spectroscopy studies (EIS) are performed on sintered samples. The as-prepared powders showed an amorphous structure and by TEM a very small particle size ({proportional_to}10 nm) was ...

Science.gov (United States)

Mesporous anatase-phase TiO(2) hollow spheres with high photocatalytic activity were prepared by hydrothermal treatment and self-transformation of amorphous TiO(2) solid spheres in an NH(4)F aqueous solution. The prepared samples were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, N(2) adsorption-desorption isotherms and UV-vis absorption spectroscopy. The photocatalytic activity was evaluated by photocatalytic oxidation decomposition of acetone in air under UV irradiation. It is found that F(-) plays an essential role in the formation of TiO(2) hollow spheres. F(-) not only induces the hollowing of TiO(2) solid spheres, but also promotes the crystallization of anatase TiO(2) nanocrystals. A possible formation mechanism for the TiO(2) hollow spheres by localized Ostwald ripening or chemically induced self-transformation is proposed based on the experimental observations. ...

Energy Technology Data Exchange (ETDEWEB)

This paper examines the correlation between mechanical properties and the density, phase, and hydrogen content of deposited alumina layers, and compares them to those of sapphire and amorphous alumina synthesized through ion-beam irradiation of sapphire. Alumina films were deposited using electron beam evaporation of aluminum and co-bombardment with O{sub 2}{sup +} ions (30-230 eV) from an electron cyclotron resonance (ECR) plasma. The H content and phase were controlled by varying the deposition temperature and the ion energy. Sapphire was amorphized at 84 K by irradiation with Al and O ions (in stoichiometric ratio) to a defect level of 4 dpa in order to form an amorphous layer 370 nm thick. Nanoindentation was performed to determine the elastic modulus, yield strength and hardness of all materials. Sapphire and amorphized sapphire have a higher density and exhibit superior mechanical properties in ...

Energy Technology Data Exchange (ETDEWEB)

Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd/sub 80/Si/sub 20/ films, we have studied the correlation between the hydrogen content and the resistivity.

Energy Technology Data Exchange (ETDEWEB)

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

International Nuclear Information System (INIS)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO_2. As shown by the investigations of a study of the anodic behavior of Fe_4_0Ni_4_0P_1_4B_6 and Fe_4_0Ni_3_8Mo_4B_1_8, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but without the boron. ...

Energy Technology Data Exchange (ETDEWEB)

Purpose: In the present study the reduction of artifacts using an extended CT scale technique was examined in 5 vitallium and 5 titanium-aluminium-vanadium tumor prostheses. Methods: 5 titanium-aluminium-vanadium and 5 vitallium distal femur Mutars {sup trademark} tumor prostheses (Mutars {sup trademark} - Modular Universal Tumor And Revision System) were implanted in 10 human femur specimens. 110 artifical drill hole lesions of 1 mm, 2 mm, 3 mm, 5 mm and 8 mm diameter were placed in the bone around the hexagonal stem of the tumor prosthesis and furthermore in the proximal part of the femur. All specimens were examined using conventional CT and an extended CT scale technique in a slice thickness of 3 mm. Results: In the proximal part of the femur all drill holes could be detected using 3 mm slices, no artefacts were observed. Along the hexagonal stem smooth lines arising from each hexagonal plane could be observed. This made it impossible to ...

International Nuclear Information System (INIS)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

International Nuclear Information System (INIS)

Formation of the soft magnetic nanostructure in amorphous Fe_1_4Ni_4_0Zr_7B_1_2 alloy due to heat treatment is studied by the Moessbauer, differential scanning calorimetry, and X-ray diffraction techniques. Annealing at temperatures 520-580 "oC leads to the formation of extremely soft nanocrystalline alloy as revealed by the rf-Moessbauer measurements. The superparamagnetic behaviour was observed for the alloy annealed at 620-640 "oC. At higher annealing temperatures good soft magnetic properties deteriorate. (author)

Energy Technology Data Exchange (ETDEWEB)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

International Nuclear Information System (INIS)

By the methods of small-angle X-ray scattering and translucent electron microscopy the existence of inhomogeneity of electron density in hydrogenated films of amorphous silicon is confirmed. The decreased density regions are extended and form a branched network of channels oriented mostly by the normal direction to the films surface. The typical size of the decreased density regions network constitutes 10 nm in the 100-800 nm films thickness range. The increase of hydrogen total partial pressure in gas mixture in case of films growth results at first in the decrease of extension of these regions and than to micropores generation in the network nodal points of the decreased electron density regions.

International Nuclear Information System (INIS)

The total and differential atomic pair-correlation functions of an icosahedral (quasicrystalline) solid were determined for the first time, directly by the differential anomalous-x-ray-scattering technique using synchrotron radiation. The observed atomic distances involving uranium atoms in icosahedral Pd/sub 58.8/U/sub 20.6/Si/sub 20.6/ suggest the presence of a quasicrystalline sublattice with vertex decoration. The pair distribution functions in the icosahedral and amorphous phases are similar up to the second-nearest neighbors, or up to 6 A-circle.

Energy Technology Data Exchange (ETDEWEB)

Changes in transverse phonon sound velocity were measured during low temperature irradiation of amorphous Pd{sub 80}Si{sub 20} with 3.5 MeV krypton ions. The sound velocity decreases as a function of the ion fluence and shows a tendency to saturate at large fluences at a relative change of {minus}4.7%. The changes in sound velocity were used to determine the changes in shear elastic constant and in Debye temperature both of which were in reasonable agreement with the value reported in the literature.

Energy Technology Data Exchange (ETDEWEB)

The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal ...

International Nuclear Information System (INIS)

Interaction of W(6) with sulphonaphtholazoresorcinol (SNAR) in aqueous solution has been studied. Tungsten is determined in the form of sulphonaphtholazoresorcinate by extraction with higher alcohols. The optimum conditions for the formation of a complex of W with SNAR in aqueous solution are as follows: a 10-fold excess of SNAR, concentration of HCl 1-1.5N, ethanol content 5-10 vol.%, time of formation of the complex 30 min. A component ratio for the complex has been established in the case of aqueous solution and extract; molar extinction coefficients are 0.9x10"4 and 1.7x10"4, respectively. The formation constant for the complex being extracted is 2.2x10"2"3. A method has been developed for determination of microgram quantities of W in a vanadium specimen.

International Nuclear Information System (INIS)

EXAFS measurements are useful in determining the local atomic environment of a particular element in a solid. Since there has been some controversy about the nature of the defects produced in A-15 materials by radiation damage, such studies were carried out on some A-15 compounds, V_3Ga which was damaged by neutrons, as well as Nb_3Ge damaged by 2.5 MeV a particles. In the V_3Ga sample, site exchange disorder seems to be the most important result of the neutron damage with less than 20% of the vanadium atoms on wrong sites. However, in the Nb_3Ge samples in addition to site exchange disorder, an unusual splitting of the first near-neighbor distance between the Ge and Nb is found. This splitting, approximately 0.2 A, may explain the large Debye Waller factors observed by Burbank et al.

British Library Electronic Table of Contents (United Kingdom)

Vanadium carbide is the most effective grain growth inhibitor for ultrafine WC-Co composites due to its high solubility and mobility in the cobalt phase at relatively low temperatures; however, there are still some debates over the best way to introduce it into the WC-Co formulation. In this paper, the differences between admixed and chemically doped grain growth inhibitors on the microstructural development and properties of an ultrafine WC-10Co composite are discussed. The densification rate of chemically doped samples is slower in the early stage of sintering and the WC grain sizes of the sintered alloys are finer than those of admixed samples, leading to the increase of hardness and transverse rupture strength of the sintered alloys. The effectiveness of the chemically doped inhibitor ...

International Nuclear Information System (INIS)

The ground state masses of thirty-nine neutron-rich nuclei from "5"1Ca to "7"2Ni have been measured using the Time-of-Flight Isochronous (TOFI) spectrometer. Eight of these masses have been measured for the first time and thirty-one are remeasurements of neutron-rich nuclei previously reported. Good agreement between these results and a previous TOFI experiment was observed except for the most neutron-rich isotopes of vanadium through iron with the present results being more bound and in better agreement with theory. The low binding energy of "6"8Ni, as indicated by an unreasonably low two-neutron separation energy, suggests the presence of a high-lying, long-lived isomeric state in this nucleus. (orig.).

International Nuclear Information System (INIS)

The formation constants of species formed in the system H"+"+alanine and VO_"2"+alanine have be determined in aqueous solution for 1.0

International Nuclear Information System (INIS)

The main compositions of iron-base amorphous self-fluxing alloy powders of 150 mesh, used in this work, are Fe, Cr, Ni, W, Mo, B, Si and C. The ranges of each element in at% are (65-70)Fe, (3-5)Cr, (2-4)Ni, (2-4)W, (1-2)Mo, (10-14)B, (4-7)Si and (2-3)C. The atomic ratio of metal-metalloid is about 80:20, so this alloy is abbreviated as M_8_0X_2_0. The material on which coatings were deposited is 1020 steel, austenitized for 1h at 880 C, water quenched, and tempered at 180 C for 1h. This heat treatment resulted in a low carbon martensite structure with a hardness of HRC35-45. After cleaning, shot blasting and preheating the steel to about 200 C, the authors sprayed a thin Ni-Al alloy layer of about 0.1--0.15mm in thickness onto the specimen by means of an oxygen-acetylene torch to provide better bonding of the coating with substrate. Then the M_8_0X_2_0 and M_8_0X_2_0+8%CeO_2 alloy coatings were sprayed to a thickness of about 0.6--0.8mm. The ...

International Nuclear Information System (INIS)

Effect of low-frequency pulsating magnetic field on the microstructure and magnetic properties of amorphous alloy Fe_7_8Si_9B_1_3 were investigated. The temperature rise induced by the treatment was measured by a non-contact infrared thermometer. The crystallization behavior and microstructure of specimens were studied by Moessbauer spectroscopy and transmission electron microscope (TEM). Magnetic properties of the specimens were investigated by alternating gradient magnetometer (AGM). The results show that the low-frequency pulsating magnetic field can promote the single-phase crystallization of amorphous alloy Fe_7_8Si_9B_1_3. The frequency, f of applied field is from 10 to 40 Hz, magnetic field, H is from 0.02 to 0.04 T and treatment duration, t is from 180-300 s. The volume fraction of crystallization phase (#alpha#-Fe(Si), the grain size, 2-10 nm) is 3-7%. The temperature rise less than 7 deg. C. Magnetic properties of samples are improved ...

International Nuclear Information System (INIS)

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min-1. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The ?-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry and ...

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Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

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In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, ...

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We report measurements of the electrical resistivity of the amorphous alloys Fe"4"0Ni"4"0P"1"4B"6 (Metglas 2826), Fe"3"2Ni"3"6Cr"1"4Pr"1"2B"6 (Metglas 2826A) Fe"8"0B"2"0 (Metgals 2605) and Fe"7"5B"2"5 as a function of pressure and temperature. The pressure is varied between 0 and 12 GPa, the temperature between 1.2 and 380 K. At low temperatures the pressure dependence yields additional information on the scattering mechanism. (orig.).

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Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.

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The transformation from the as-quenched amorphous to the crystalline state in Fe/sub 78/B/sub 13/Si/sub 9/ alloy has been investigated using a new-type neutron diffractometer. The time resolved diffraction patterns clearly show that this alloy crystallizes into FeSi alloy and Fe/sub 2/B in that order. The time evolution of these crystalline phases can be analyzed by the Kolmogorov-Johnson-Mehl-Avrami equation with the exponent of about 2.5 over a wide temperature range. This suggests that the crystallization occurs by the diffusion-controlled growth with a constant nucleation rate. The scaling behavior in the crystallization kinetics is also discussed.

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There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

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By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.

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Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

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This patent describes the vapor phase catalytic dehydrogenation of a C/sub 2/-C/sub 4/ paraffin by contacting the paraffin with a spinel of the formula A/sup III/V/sub 2-x//sup III/C/sub x//sup III/O/sub 4/, formula (1) or a crystalline perovskite of the formula D/sup III/V/sub 1-y//sup III/C/sub y//sup III/O/sub 3/, formula (2) where A is one or more of Mg, Zn, Mn, Fe, Co, Ni, Cu and Cd; D is oone of more of Y, the rare earths and Bi; C is one or more of Al, Ga, Cr, Fe and Co, x is zero to < 1.9, and y is zero to < 0.9, which spinel or perovskite is made by a process which comprises (1) reducing a pentavalent vanadium oxidic compound to substantially the V/sup 111/ state by heating at 100/sup 0/C or less an aqueous medium slurry of solution of the pentavalent compound containing a reducing agent selected from hydrazine and a hydrocarbylhydrazine, (2) providing in the aqueous medium ether before, during or after the reducing step, A/sup II/, D/sup III/ and ...

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The use of standard cementitious material creates pulses of pH in the magnitude of 12-13 in the leachates and release alkalis. Such a high pH is detrimental and also unnecessarily complicates the safety analysis of the repository. As no reliable pH-plume models exist, the use of products giving a pH below 11 in the leachates facilitates the safety analysis. Also, according to current understanding, the use of low-pH cement (pH = 11) will not disturb the functioning of the bentonite, although limiting the amount of low-pH cement is recommended. A result of the project is that there are both low-pH cementitious material for grouting larger fractures (= 100 {mu}m) and non-cementitious material for grouting smaller fractures (< 100 {mu}m) that will, after further optimisation work, be recommended for grouting of deep repositories. This project concentrated on the technical development of properties for the low pH grouts. Long-term safety and environmental aspects and durability of ...

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An amorphous mesoporous titania-silica aerogel (20 wt%TiO{sub 2} - 80 wt% SiO{sub 2}) and tert.-butylhydroperoxide (TBHP) have been used for the epoxidation of various allylic alcohols. Allylic alcohols possessing an internal double bond were more reactive than those with a terminal C=C bond. Epoxide selectivities could be improved by addition of (basic) zeolite 4 A and NaHCO{sub 3} to the reaction mixture. (orig.)

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A-15 compounds are extremely brittle and difficult to process for practical applications. A novel processing technique was developed to greatly improve the mechanical and superconducting properties of A-15 alloys. The new processing technique can be described as follows: (1) to select compounds that can form the A-15 phase (the selected A-15 compounds in this research were Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys); (2) to rapidly solidify them into the amorphous state; (3) to anneal the quenched amorphous products into ultra fine-grained single A-15 phase. The extreme grain refinement greatly improved the flexibility and the critical current density of the alloys. The melt spinning technique was used to rapidly solidify Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys. Ti3Nb6Mo3Si4 alloys were relatively easily formed into the amorphous state. Nb3Al alloys required the addition of glass forming elements Si and B. It ...

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Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage ...

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Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

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It if first shown, that the effective field of uniaxial magnetic anisotropy of Fe-Cr-P-C and Fe-Ni-B-Si system amorphous alloys is reduced with an increase of the source melt isothermal exposure time. The behaviour noted is conditioned by microcoherence and relaxation processes in the nonequilibrium liquid phase after crystal-liquid phase transition.

International Nuclear Information System (INIS)

Computed tomography was performed on 5 patients with chronic cerebral paragonimiasis. CT showed solitary or multiple, amorphous, round, or oval calcifications, and ventricular enlargement in all 5 cases. A large low-density area is also found in 4 of the 5 cases. These CT findings are compatible with previously reported findings of simple X-ray films of the skull, pneumoencephalography, and pathological studies. (author).

International Nuclear Information System (INIS)

Uranium-aluminum alloys with a significant enrichment of uranium with "2"3"3U or "2"3"5U serve as nuclear fuels in research reactors. The quality assurance of this fuel requires, among other things, precise knowledge that all trace metal constituents that affect neutron economy, fuel integrity, and fuel fabrication process parameters are well within the specification limits. Trace metal characterization of "2"3"5U-Al alloy has been carried out by atomic spectrometry. The trace metal constituents of interest are grouped into common metals (silver, boron, calcium, cadmium, cobalt, chromium, copper, iron, magnesium, manganese, molybdenum, sodium, nickel, lead, silicon, tin, titanium, vanadium, tungsten, and zinc) and lanthanides (cerium, dysprosium, europium, gadolinium, holminium, lutetium, samarium, and terbium). The elements yttrium and zirconium are grouped with the latter in view of the chemical separation procedure used. The alloy samples are dissolved in 6 M ...

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Proton exchange membrane fuel cells (PEMFCs) are attractive because of their high conversion efficiency, low pollution, lightweight, and high power density. A major area of challenges is the design and engineering of active, robust, and low-cost electrocatalysts. This report discusses recent findings of our investigations of the design and nano-engineering of platinum-vanadium-iron catalysts for use in PEMFC. The membrane electrode assembly was prepared using nano-engineered PtVFe nanoparticles with controlled composition and size supported on carbon as cathode electrocatalysts. The electrocatalytic activity and stability of the catalysts have been characterized by both rotating disk electrode and membrane electrode assembly measurements. The trimetallic catalysts have been shown to exhibit excellent electrocatalytic performance in PEMFC in comparison with commercial platinum catalysts. The results exhibited a good agreement between obtained these two types of ...

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Aluminum nitride has been proposed as electrically insulating coating in connection with blankets made of vanadium alloys. Irradiations were performed with an applied DC electric field of 100 kV/m, using a 104 MeV {alpha}-particle beam. The dose achieved were 0.1 dpa at 300 C, 0.05 dpa at 400 C, and 0.06 dpa at 500 C. The out-of-beam conductivity {sigma}{sub 0} decreased at all temperatures employed during early stage of irradiation. Before 0.02 dpa had been reached, {sigma}{sub 0} dropped to low values of typically (2-4) x 10{sup -11} ({Omega} m){sup -1}. Although a moderate increase can be observed during further irradiation, {sigma}{sub 0} remained below the initial value of the unirradiated specimen for all temperatures. That is, there is no significant evidence for radiation induced electrical degradation. The in-beam conductivity {sigma}, measured continuously during irradiation, also decreased by at least one order of magnitude. Relevant damage dose and ...

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Experimental discussions were given on effect of V and W addition on the high temperature strength properties of 12% Cr-15% Mn austenite steels. The test samples were added with W at 0% to 3.5% and V at 0% to 0.5% in addition to C and N, and were given aging treatment or solution treatment. This paper describes the following matters on the results of high-temperature strength measurements and structural observation: A remarkable trend was observed that M23 Cb type carbides precipitate in the aging treatment, wherein aging hardening appears prominently which is attributable to ultra-fine deposits of vanadium nitride (VN) in the V-added material; the V addition is very effective in increasing the high-temperature tensile strength and creep fracture strength as compared with single W addition, wherein the said carbides that accelerate the precipitation as a result of the V addition make a large contribution, in addition to that by ultra-fine VN deposits; and the ...

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A new preparation method for LiNiVO{sub 4} has been developed. LiNiVO{sub 4} can be readily obtained from the solid state reaction of LiNiO{sub 2} and V{sub 2}O{sub 3} or V{sub 2}O{sub 5} at 700 C for 2 h in air. The quarternary Li-Ni-V-O reaction is strongly dependent on vanadium starting materials, reaction environment atmosphere, reactant stoichiometry and synthesis temperature. Individual particles of LiNiVO{sub 4} powders are well-formed crystallites shown clearly by scanning electron microscopy results to be in the shape of an octahedron. Powder X-ray diffraction studies of this crystalline material indicate that LiNiVO{sub 4} has an inverse spinel structure different from that of known cathode materials such as LT-LiCoO{sub 2} and LiMn{sub 2}O{sub 4}. The Li/LiNiVO{sub 4} cell can be charged and discharged at about 4.8 V versus metallic Li. To our knowledge, this is the Li intercalation reaction with the highest voltage known. (orig.) 14 refs.

Energy Technology Data Exchange (ETDEWEB)

The influences of temperature and duration of tempering on hardness and microstructure were investigated at high-temperature martensitic and low-carbon steels with 9% chrome and the further alloying elements molybdenium, vanadium, niobium and partially tungsten. After austenitizing and subsequent air cooling the steels were tempered at temperatures below, at and above Ac{sub 1b} for different times and finally a hardness test was performed. Making use of the temperature dependence of the hardness tempering diagrams were constructed and the Hollomon-Jaffe-Parameter on the three steels was determined within its application limits. Micrographs of the structure shows the formation of the carbides and the martensite. At tempering temperatures below Ac{sub 1b} a decrease of hardness occurs, above Ac{sub 1b}, a hardness rise due to the partial austenitizing was obtained. While hardening below Ac{sub 1b}, the tempering quality increases from P 91, NF 616 to E 911. (orig.) ...

International Nuclear Information System (INIS)

A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thin amorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 C a metastable cubic alloy forms at the Zr deposited on Al interface. Upon heating to 485 C a multilayer ...

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Crystalline MnV{sub 2}O{sub 6} has been synthesized by a polymer gellation method and investigated for its physical and electrochemical properties as an anode material for Li secondary battery. The physical characterization was carried out by thermal analysis (TG/DTA), FT-IR and SEM. Structural analysis by powder XRD and spectroscopic analysis by XANES showed that the synthesized compound is MnV{sub 2}O{sub 6} with brannerite structure. The Li insertion of MnV{sub 2}O{sub 6} anode during the first charge showed a large capacity of about 1400 mAh/g, accompanied by irreversible structural transformation into amorphous material. Despite its structural transformation to amorphous during the first lithiation, subsequent cycles showed a capacity of about 800 mAh/g. This paper presents the advantage of this material over existing anode material and discusses the mechanism underlying the electrode process.

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering spectra (RBS) showing the oxide film and composition isothermally ...

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Diffusion during He/sup +/, Ne/sup +/, and Xe/sup +/ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu/sub 6/Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the diffusion without irradiation. The data suggest that vacancylike ...

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This paper describes inorganic solid electrolytes from a viewpoint of electrolytes for lithium batteries. Lithium ion conductive inorganic solid electrolytes are largely divided into crystalline and amorphous substances. Crystalline substances are known as LiI and Li3N, and also oxygen acid salt. However, when considering application to a battery, its large grain boundary resistance and electrochemical instability would be a problem. Lithium ion conductive amorphous solid electrolytes are divided into an oxide system and a sulfide system. Since most of them do not contain transition metal elements, they are stable against electrochemical reduction, and ions move isotropically in electrolyte. Therefore, ion conduction paths across the grain boundaries may be connected more easily, forming an electrolyte with low grain boundary resistance. As a result of the efforts of the authors in searching new additives substituting LiI, it was found that ...

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In order to verify long-term reliability of amorphous alloy wound core distribution transformers, accelerated aging tests and field trials used by actual transformers were practiced. As for accelerated aging tests, short-circuit tests were added to imitate mechanical stress in operation on a utility's distribution system. As a result, even after the equivalent of 30 years, which was the normal expected transformer's life, magnetic characteristic was unchanged, so these transformers could be operated. Also, about field trials, two hundred transformers of four kinds were installed on a utility's distribution system to look into no-load characteristics. They were equipped with a mechanism to measure load current, background vibration and lightning surge current, so the influence for magnetic characteristic could be inspected. As a result, remarkable change wasn't seen even after six months.

International Nuclear Information System (INIS)

Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi_2 was formed on amorphous Si substrates at 350 "0C, while NiSi remained stable on crystalline Si substrates even at 400 "0C. PtSi reacted with Si to form a metastable Pt_4Si_9 phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt_4Si_9 was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for PdSi on Si in the temperature range of 35--400 "0C. The ion mixing results were compared with those from thermal annealing. The importance of demixing of a thermally stable system was explored.

British Library Electronic Table of Contents (United Kingdom)

High lithium-ion (Li^+) conductive garnet-structured lanthanum lithium zirconate (LLZ) solid electrolyte is prepared by incorporation of appropriate amounts of silicon (Si) and aluminum (Al). The resultant pelletized LLZ obtains total Li^+ conductivity of 6.8x10^-^4Scm^-^1 at 298K. This improved conductivity is nearly identical with the bulk Li^+ conductivity of the LLZ reported earlier, suggesting that the grain boundary resistance is effectively reduced by the incorporation of Si and Al. Microanalyses by transmission electron microscopy coupled with energy-dispersive X-ray microanalysis and electron energy-loss spectroscopy revealed the presence of amorphous Li-Al-Si-O with nano crystalline LiAlSiO4 at grain boundaries. Fast lithium-ion transport around the amorphous Li-Al-Si-O/LiAlSiO4 ...

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The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO/sub 2/, Si/sub 3/N/sub 4/ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si/sub 3/N/sub 4/, but SiO/sub 2/ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO/sub 2/ and Si/sub 3/N/sub 4/ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films.

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The overall objective of this research work was to prepare hydrocracking catalysts using amorphous silica-alumina (ASA) supports in combination with USY and {beta}-zeolites. Three supports: namely silica-alumina, USY and {beta}-zeolites were selected to prepare the extrudates using AP-1 as a binder, while two metal pairs: namely Ni-W and Ni-Mo were loaded on the extrudates through co-impregnation using incipient wetness technique. The catalysts were then calcined at 550C for 2h. The catalysts were tested in a fixed-bed flow reaction system for their activity, using desulfurized vacuum gas oil (DS-VGO) as a feedstock. The catalytic evaluation results of the catalysts showed that {beta}-zeolite alone and in combination with the ASA used in this study, has a potential as a support for developing heavy oil hydrocracking catalysts. A balance of weak and strong acidities of {beta}-zeolite provides control cracking, while high surface area and bigger pores of ...

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Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. {copyright} {ital 1999 American Institute of Physics.}

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This patent describes an energy storage device. It comprises: a working electrode, a counter electrode, electrically isolated from the working electrode; an electrolyte in contact with the working electrode and the counter electrode, and means for collecting electrical current therefrom; the working electrode consisting essentially of an amorphous metal alloy of the formula: A{sub {ital a}}M{sub {ital b}}M{prime}{sub {ital c}}, wherein A is at least one metal selected from the group consisting of Ag, Hg and Pt; M is at least one metal selected from the group consisting of Pb, Cu, Cr, Mo, W, Ni, Al, Co, Fe, Zn, Ru, Cd and Mn; M{prime} is at lest one of the elements selected from the group consisting of Ca, Mg, Ti, Zr, Hf, V, Nb and Ta; and wherein a ranges from about 0.005 to about 0.80; b ranges from 0.05 to about 0.70; and c ranges from about 0.08 to about 0.95.

CERN Document Server

Fourier Transform Infrared (FTIR) spectroscopy has been utilized during high rate E-beam evaporation/deposition of YBa2Cu3O7 (YBCO). The results demonstrate the great utility of FTIR as an in situ monitor of YBCO deposition and processing. We detect different (amorphous/fine polycrystalline) insulating pre-existing phases to the high Tc superconducting phase which appear to have distinct reflectivity fingerprints dominated by thin film interference effects, as a function of temperature and oxygen pressure. These fingerprints reveal some of the kinetic and thermodynamic pathways during the growth of YBCO.

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Reinforced (heterogel) silicate materials containing an amorphous and a crystalline phase are being used more and more industry. Such systems are energetically unsaturated and therefore promising for use in catalysts. The authors used two reinforced materials as supports: an aluminosilicate containing a zeolite (the cracking catalyst, tseokar) and asbestos-containing aluminosilicate. The active component was introduced by impregnation, and this was followed by heat treatment during which the chemical composition and porous structure were formed. The impregnating mixture consisted of solutions of potassium sulfate and vanadate of the required concentrations. The testing shows that reinforced heterogel systems are promising as support materials for sulfuric acid catalysts.

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A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

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A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.

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As concern regarding global environmental problems such as the greenhouse effect and acid rain has increased, so too has the demand for commercially viable solar cells as a clean energy source. Interest in amorphous silicon (a-Si) solar cells has been particularly high, due to their low cost. Technological developments in the field of a-Si solar cells are discussed from the viewpoints of fabrication process, materials, and cell structures. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are mentioned

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

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On the basis of observations of the JTEC team, it appears that Japanese universities and research institutes are leading long-term R&D thrusts for development of new materials casting technologies. Significant efforts include amorphous metals, intermetallics, application of MHD in continuous casting of steel, and energy efficient furnace technology. Industrial R&D seems focused more on process improvements than on new product technologies, but significant efforts in new cast materials included cast metal matrix composites, materials substitutions for thinner wall products, and advanced ceramic products for foundry industry applications.

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

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A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.

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Effect of low-frequency pulsating magnetic field on the microstructure and magnetic properties of amorphous alloy Fe{sub 78}Si{sub 9}B{sub 13} were investigated. The temperature rise induced by the treatment was measured by a non-contact infrared thermometer. The crystallization behavior and microstructure of specimens were studied by Moessbauer spectroscopy and transmission electron microscope (TEM). Magnetic properties of the specimens were investigated by alternating gradient magnetometer (AGM). The results show that the low-frequency pulsating magnetic field can promote the single-phase crystallization of amorphous alloy Fe{sub 78}Si{sub 9}B{sub 13}. The frequency, f of applied field is from 10 to 40 Hz, magnetic field, H is from 0.02 to 0.04 T and treatment duration, t is from 180-300 s. The volume fraction of crystallization phase ({alpha}-Fe(Si), the grain size, 2-10 nm) is 3-7%. The temperature rise less than 7 deg. C. Magnetic ...

International Nuclear Information System (INIS)

Full text: It was recently-established for hexagonal barium ferrite-industrially important magnetically hard material that refinement of the crystallite dimensions into the nanoscale regime, typically #<=# 10 nm, leads after heat treatment at temperatures 800-1000 deg C to significant coercivity increase of up to 6.5 kOe (#approx#3-4 times) with saturation magnetisation values of 50-55 emu/g (#approx#95% of bulk at room temperature). High-energy mechanochemical processing has been applied to prepare nanostructural (nanocrystalline-amorphous) composites. High resolution electron microscopy studies reveal that the enhancement of the final magnetic properties was due to formation of magnetically noninteracting #approx#l,#mu#m Ba-ferrite particles with 5-10 nm amorphous surface layer - depending on annealing parameters. Similar situation was established also for ball milled strontium ferrite (SrFe_1_2O_1_9) powders where short annealing 4 h at ...

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface ...

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Amorphous materials in the system xLi{sub 2}S{center_dot}(100-x)SiS{sub 2}, where x ranged from 50 to 70 mol %, and (100-y) (0.6Li{sub 2}S{center_dot}0.4SiS{sub 2}){center_dot}yLi{sub 4}SiO{sub 4}, where y ranged from 0 to 10 mol %, were synthesized by mechanical milling of crystalline starting materials, Li{sub 2}S, SiS{sub 2} and Li{sub 4}SiO{sub 4}. At the compositions with large amounts of Li{sup +} ions, a part of crystalline Li{sub 2}S used as a starting material remained in the milled powder samples. It was found that the milled powder samples in both systems obtained by mechanical milling exhibited high conductivities in the order of 10{sup -4}S{center_dot}cm{sup -1} at room temperature in spite of the presence of small amounts of Li{sub 2}S crystals. The conductivity values of the pelletized samples of xLi{sub 2}S{center_dot}(100-x)SiS{sub 2} powders maximized at the composition of about x=60. On the other hand, the conductivities in the composition range ...

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TRITEX was a pumped loop with Pb-15.8Li, fabricated from steel 1.4922. In contact with the molten eutectic were also molybdenum, vanadium and armco-iron. The loop was originally designed to investigate tritium extraction using solid getter metals. Over the years the goal changed to the study of metals, corrosion products and purification of the eutectic mixture. Therefore many modifications were done. The first part of this report describes TRITEX. All parts were enclosed in thermoboxes for a homogeneous temperature. One test section was in an argon glove box and could be opened during operation. Other special equipment`s were: permeation membranes and liquid-metal-covergas-interfaces to study the transport of H{sub 2}, D{sub 2} and {sup 3}H, different purification devices, a quartz observation window to see the liquid metal surface, 4 different kinds of flow measurements, level indicators, freeze valves. The second part describes loop operation. Between 1989 and ...

Science.gov (United States)

Hypercholesterolemia

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Not Available

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The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

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The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.

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The Kernel Polynomial Method (KPM) has been successfully applied to tight-binding electronic structure calculations as an O(N) method. Here the authors extend this method to nonorthogonal basis sets with a sparse overlap matrix S and a sparse Hamiltonian H. Since the KPM method utilizes matrix vector multiplications it is necessary to apply S{sup {minus}1}H onto a vector. The multiplication of S{sup {minus}1} is performed using a preconditioned conjugate gradient method and does not involve the explicit inversion of S. Hence the method scales the same way as the original KPM method, i.e. O(N), although there is an overhead due to the additional conjugate gradient part. The authors show an application of this method to defects in a titanate/platinum interface and to a large scale electronic structure calculation of amorphous diamond.

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The factors affecting the rate of silica leaching in alkaline aqueous media from surface silanized, nanoporous, amorphous, silica gels and from silanized silica gels that have been modified with polyamines to form the previously reported silica polyamine composites (SPCs), BP-1 and BP-2 have been investigated. Silanization with alkyl trichlorosilanes slows the rate of silica leaching relative to the unmodified silica gels. The use of bulkier aryl silanes somewhat decreases the silica leaching under the same conditions. Interestingly, after modification of the silanized silica with poly(allylamine) (PAA) to make BP-1, the leaching increases, but subsequent modification of the SPC with chloroacetic acid to make BP-2, quenches this increase. A mechanism explaining these results is discussed. ...

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This paper attempts to explain the peculiarities of the radial-distribution function of metal glasses without involving ideas of the amorphous structure. On a computer, the radial atomic density for a spherical eutectic single crystal of the composition Fe/sub 84/C/sub 16/ of radius 15 A formed by alternating small crystals of e-Fe and Fe/sub 3/C of cubic form with the edge of the cube ca 10 A. For the sake of clarity, the diagram of such a quasisingle crystal is shown and has been given a cubic boundary. The change in the relationship between the heights of the subpeaks of the second maximum of the radial distribution function of atoms in the Fe-B glasses with a change in the concentration of boron can be explained by the change in the space group of the Fe/sub 3/B metastable boride which is formed in this system.

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Summary: The surface coverage of amorphous silica gels used in the synthesis of silica polyamine composites has been investigated by 29Si NMR. By diluting the polyamine anchor silane, chloropropyl trichlorosilane, with methyl trichlorosilane it was found that surface coverage could be markedly improved for a range of amine polymers after grafting to the silica surface. The commensurate decrease in the number of anchor points and increase in the number of free amines results in an increase in metal capacity and/or an improvement in capture kinetics. Solid state CPMAS-13C NMR has been employed to investigate the structure and metal ion binding of a series of these composite materials. It is reported that the highly branched polymer, poly(ethyleneimine) (PEI) exhibits much broader 13C NMR res...

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P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

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The use of solvating polymers of polyether type is an interesting solution for the manufacturing of high capacity lithium batteries with lithium metal anodes and which can operate at T > 50 deg. C. These operating conditions are perfectly compatible with electric-powered vehicle and stationary battery applications. In order to improve the ionic conductivity of polymer electrolytes, new aprotic and amorphous polyether lattices have been synthesized having a good conductivity but also good thermal, mechanical and electrochemical stabilities. Two type of 3-D polyether lattices obtained by reticulation of linear pre-polymers have been selected as host polymers: unsaturated poly-condensate and unsaturated co-polyethers. (J.S.) 18 refs.

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Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by previous authors.

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Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd{sub 2}Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd{sub 2}Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.

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High molecular weight samples of the novel biodegradable polyester poly(ethylene sebacate) (PESeb) were synthesized. Miscible poly(ethylene sebacate)/poly(4-vinyl phenol) semicrystalline/amorphous blends were prepared by applying the solvent casting method. Miscibility was proved by the single composition dependent glass transition temperature over the entire composition range observed in DSC traces of the quenched blend samples and also by the melting point depression. The Flory-Huggins interaction parameter was found to be x12 = -1.3. Also, FTIR spectra supported the hypothesis of intermolecular interactions due to hydrogen bonding. The crystallization of PESeb in blends was studied. As expected, isothermal crystallization rates decreased in the blends with increasing the PVPh content. T...

International Nuclear Information System (INIS)

Anthracene-bis-resorcinol is an interesting molecule as it forms a hydrogen-bonded network when guest molecules with weak polarity are included. Focused ion beam (FIB) was irradiated on a part of its amorphous film with low dose, and the film was exposed to the vapor of guest molecules. From fluorescence and AFM analyses of this film, it was found that no inclusion compound was formed in FIB irradiated area, i.e. FIB irradiation suppresses the ability to form the inclusion compounds. By utilizing this phenomenon, we succeeded in a microfabrication of relief structures consisting of inclusion compounds which has different fluorescence from its surrounding. Morphology, fluorescence, and IR absorption analyses indicated that hydroxyl or resorcin groups are damaged by ion beams, and consequently a formation of hydrogen-bonded networks, which play a role of a lattice caging guest molecules, becomes impossible.

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Changes in mass density of amorphous Pd{sub 80}Si{sub 20} were monitored in situ during irradiation with He{sup 2+} and H{sup +} ions at temperatures below 100 K and during subsequent thermal treatment. The mass density decreased with increasing ion fluence and exponentially approached a saturation value of -1.2%, corresponding to a recombination volume of 190 atomic volumes. The initial swelling rate was 2.3 atomic volumes/displaced atom. The mass density of the irradiated material increased during subsequent thermal treatment, and the irradiation-induced decrease of the mass density recovered completely at room temperature.

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This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

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Nowadays, the studies are focused on the search of better electrocatalysts that promote the complete oxidation of ethanol/bioethanol to CO2. To that end, amorphous bi-catalytic catalysts of composition Ni59Nb40Pt1-xYx (Y=Cu, Ru, x=0.4% at.) have been developed, obtained by mechanical alloying, resulting in higher current densities and an improvement in tolerance to adsorbed CO vs. Ni59Nb40Pt1 catalyst. By using voltammetric techniques, the appearance of three oxidation peaks can be observed. The first peak could be associated with the electrooxidative process of ethanol/bioethanol to acetaldehyde, the second peak could be the oxidation of acetaldehyde to acetic acid, and the last peak might be the final oxidation to CO2. Chrono-amperometric experiments show qualitative poisoning of catalyt...

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Nd{sub 40}Fe{sub 30}Al{sub 10}Co{sub 15}B{sub 5} alloys were fabricated by high energy ball milling method under various conditions. Microstructure of the alloys was investigated by X-ray diffraction and electron microscopy techniques. Magnetic properties were characterized by hysteresis and thermomagnetic measurements. The high coercive fields up to 2.36 T have been observed on the samples consisting of Nd{sub 2}(Fe,Co,Al){sub 14}B, Nd{sub 6}(Fe,Co,Al){sub 14} and Nd crystallites imbedded in a residual amorphous matrix.

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The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.

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Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.

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The distribution of /sup 35/S-sulfate and /sup 3/H-glucosamine in the angular region of the hamster was studied by light and electron microscopic autoradiography following intraperitoneal injection of these compounds to hamsters. Exposed silver grains of /sup 35/S-sulfate were concentrated in the trabecular meshwork, sclera, and cornea, and grains of /sup 3/H-glucosamine were localized in the trabecular region. The radioactivity of both isotopes was observed in the Golgi apparatuses of the endothelial cells of the angular aqueous plexus and the trabecular meshwork. The grains were noted over the entire cytoplasm, except for the nucleus, and then were incorporated into the amorphous substance and collagen fibers in the region adjacent to the angular aqueous sinus. These results suggest that endothelial cells in the angular region synthesize and secrete the sulfated glycosaminoglycans and hyaluronic acid.

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

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In this, the last of a series of three papers, we discuss a method of forming iron phosphate ceramics by a reduction process. We report the formation of iron oxide ceramics by reducing hematite with iron in a phosphoric acid solution. The reaction results in a rapid-setting ceramic (at room temperature) with a compressive strength of 3700 psi and a density of 1.7 g/cm{sup 3}. Although the exact mineral form of the binder is difficult to determine because it is mostly amorphous and hence is not amenable to X-ray diffraction analyses, this material is expected to consist of iron hydrophosphates. The reduction process is very useful in recycling several industrial wastes that are rich in hematite, including iron mine tailings, red mud (a caustic waste from the alumina industry), and machining swarfs. Formation of ceramics with red mud and swarfs is also discussed.

International Nuclear Information System (INIS)

The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.

Science.gov (United States)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.

British Library Electronic Table of Contents (United Kingdom)

ABSTRACT With corn starch as raw material, dextrin was prepared by the combined application of common neutral and thermostable a-amylases in this study. The effects of reaction temperature, reaction time, addition of common neutral and thermostable a-amylases on dextrose equivalent (DE)-value of dextrin were investigated. The obtained dextrin with a DE value of 20.43 was evaluated for morphology, crystallography, particle size distribution and thermal property by scanning electron microscope, X-ray diffractometer, light scattering particle size analyzer and thermogravimetric analyzer. The results showed that the amorphous regions in the core part of corn starch were completely hydrolyzed and only the fractured crystalline surface remained. The particle size of the dextrin change significan...

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This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL`s in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy`s National Photovoltaic Research Program plans.

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In order to understand the chemistry of altermetal dopants in antimony oxide, the detailed structural characterization of two ..beta..-Sb/sub 2/O/sub 4/ compounds is reported, Mo-doped ..beta..-Sb/sub 2/O/sub 4/ (1.5 metal%) and V-doped ..beta..-Sb/sub 2/O/sub 4/ (5 metal%). The methods used to characterize these materials are X-ray and neutron diffraction, scanning electron microscopy, Mo K-edge extended X-ray absorption fine structure spectroscopy, and elemental analysis. The atomic position of each of these dopants in Sb/sub 2/O/sub 4/ is radically different as is the overall effect on the host structure. Molybdenum does not substitute for Sb atoms, rather the Mo atoms are found in channels of electron density formed by Sb/sup 3 +/ lone pairs. The two nearest Sb/sup 3 +/ are absent and the oxygen stoichiometry is preserved. The formula is Sb/sub 1.97/Mo/sub 0.015/O/sub 4/. Vanadium incorporates substitutionally for the Sb/sup 3 +/ atoms and there are random ...

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Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high temperatures, the band at 4.4 eV is dominant in the x-ray-excited TSL and afterglow spectra. Its intensity ...

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Cathodic arc deposition is an established and industrially applied technique for the formation of nitrides (e.g. TiN); it can also be used for metal oxide thin film formation. A cathodic arc plasma source with the desired cathode material is operated in an oxygen atmosphere of appropriate pressure, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on accelerator components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}-Y{sub ...

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The 1977 version of the Simpson-Puls-Dutton model appears to be the most amenable with respect to utilizing known or readily estimated quantities. The Pardee-Paton model requires extensive calculations involving estimated quantities. Recent observations by Koike and Suzuki on vanadium support the general assumption that crack growth in hydride forming metals is determined by the rate of hydride formation, and their hydrogen atmosphere-displacive transformation model is of potential interest in explaining hydrogen embrittlement in ferrous alloys as well as hydride formers. The discontinuous nature of cracking due to hydrogen embrittlement appears to depend very strongly on localized stress intensities, thereby pointing to the role of microstructure in influencing crack initiation, fracture mode and crack path. The initiation of hydrogen induced failures over relatively short periods of time can be characterized with fair reliability using measurements of the ...

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The costs of establishing a computer-based training program for FFTF reactor operators are analyzed.

International Nuclear Information System (INIS)

Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose of 3x10"1"3 ion/cm"2. High-resolution TEM showed a complex structure of the implantation induced damage ...

International Nuclear Information System (INIS)

A processing technique for A-15 compounds which has improved mechanical and superconducting properties has been developed. This technique consists of rapid solidification of the alloy by the chill block spinning machine (CBSM) to form amorphous ribbons and by subsequent annealing crystallizes the stable or metastable fine grain flexible A-15 structure. The CBSM has been modified so that all the processing parameters could be controlled and optimized for each alloy composition. By the improved CBSM it was possible to form amorphous Nb_3Si, Nb_3Ge and Nb_3(AlSi) ribbons with more than 80% reproducible rate. Critical current density measurements are limited by contact resistance. A Cu plating technique was introduced in this research that made the contact resistance three orders of magnitude lower than that obtained by other methods. This plated coating also gave an additional mechanical support to the sample and acted as a shunt for thermal ...

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Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until ...

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The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT ...

Science.gov (United States)

The applicability of Pd/sub x/Ta/sub 1-x/ as a diffusion barrier on Si has been investigated. For this purpose Pd/sub x/Ta/sub 1-x/ films of 200 nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between over-layer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as-deposited Pd/sub x/Ta/sub 1-x/ films with 0.2 less than or equal to x less than or equal to 0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing a discontinuous step in the reaction temperature. RBS spectra revealed that for the Pd-rich compositions first a stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi2 formed at the surface. For Ta-rich compositions Pd2Si formed first as well, however, the reaction temperature was so high that Pd2Si grains formed in a Si ...

Science.gov (United States)

... Notes Papers from the Proceedings AIAA 2nd Biennial ... Based (GB) Lower Tier Weapon System clearly ... are too short for space-based cueing to be ...

Energy Technology Data Exchange (ETDEWEB)

Low-cost titanium alloy components are getting increasing attention in aerospace applications. Cost reductions are possible in the alloys themselves and in the production techniques. The former aspect is less promising as titanium alloys are costly to produce. Of course, there are some new developments like the (alpha plus beta) alloy Ti-6 Al-2 Fe-0.2 Si (TIMETAL 62S) and the beta-alloy Ti-6.8 Mo-4.5 Fe-1.5 Al (TIMETAL LCB), in which low-cost iron replaces costly beta alloying elements like vanadium or molybdenum, but these will be used mainly on the mass production markets, e.g. motor car construction. In consequence, optimisation of production methods is the more promising option. Near net shape processes will reduce the production cost and improve the fly-to-buy ratio. Some of these production processes are explained. [Deutsch] Die Herstellung preiswerter Bauteile aus Titanlegierungen gewinnt auch in der Luft- und Raumfahrt zunehmend an Bedeutung. Zwei Wege ...

Norwegian Open Research Archives (NORA)

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Science.gov (United States)

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KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

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KoreaScience (Korea)

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