WorldWideScience
2

In-vivo blood velocity and velocity gradient profiles downstream of stented and stentless aortic heart valves  

DEFF Research Database (Denmark)

BACKGROUND AND AIM OF THE STUDY: Abnormal flow conditions across aortic bioprosthetic valves may result in degenerative processes. Thus, it is important to implant biological valve prostheses with velocity profiles similar to those of native valves. The study aim was to compare blood velocity and velocity gradient profiles downstream of stented and stentless aortic valves implanted in pigs, and in native porcine valves. METHODS: Stented valve prostheses (Mitroflow, n = 7) or stentless valve prostheses (Solo, n = 5 or Toronto SPV, n = 7) were implanted into pigs; the native valve was retained in eight animals. After weaning the animals from cardiopulmonary bypass, cardiac magnetic resonance imaging was performed to ...

2010-01-01

3

Some medical applications of thermomechanically treated titanium nickelide  

Energy Technology Data Exchange (ETDEWEB)

An original device and a method of its application for restoring of the function of relatively incompetent valves (both patented) are elaborated. Application of the new device allows to lower the difficulty of surgical treatment, to decrease the duration of operation and post-operative period. The long-term results of six-year long experience of its application are presented. The patients examination after 2,5-3,0-year post-operation period shows perfect vein valve correction. A device for stone extraction from tubular organs (patented) fabricated with titanium nickelide superelastic alloy is presented. The new suggested design is free of the drawback inherent in the previous one. The working element of the device is formed as a truncated cone or a truncated cone coaxial with the cylinder (the previous design was formed as a full cone) that prevents overstraining and residual strain accumulation during the manipulation process. Since the first ...

2001-11-01

6

Patient-specific reconstructed anatomies and computer simulations are fundamental for selecting medical device treatment: application to a new percutaneous pulmonary valve  

UK PubMed Central (United Kingdom)

Nowadays, percutaneous pulmonary valve implantation is a successful alternative to surgery for patients requiring treatment of pulmonary valve dysfunction. However, owing to the wide variety of implantation...Full Text Available

2010-06-28

7

Balloon dilatation and balloon-expandable stents for PTA of proximal venous stenoses in haemodialysis patients. Dilatation und ballonexpandierbare Stents zur Therapie zentralvenoeser Stenosen bei Dialysepatienten  

Energy Technology Data Exchange (ETDEWEB)

On 10 dialysis patients we performed 12 balloon dilatations, 2 catheter lyses, 6 stent implants (Palmaz stent) and one atherectomy of central venous stenoses or occlusions (v. subclavia, v. brachiocephalica) at the shunt arm of the patient. The primary success rate was, in balloon PTA and lysis, 12/14 interventions, and in stent placement and atherectomy 7/7. The angiographical and clinical primary result after stent implantation was significantly better than after conventional dilatation. After 66% of the balloon dilatations recidivation occurred within the first year; this can be treated by means of repeated PTA. Whether long-term exclusion of recurrence can be achieved by stent implantation, must be established by means of follow-up studies that are at present in progress. (orig.).

1990-09-01

8

Serial Intravascular Ultrasound Analysis of the Impact of Myocardial Bridge on Neointimal Proliferation After Coronary Stenting in Patients with Acute Myocardial Infarction  

British Library Electronic Table of Contents (United Kingdom)

Background: Mechanisms underlying the association between myocardial bridge (MB)-stenting and in-stent restenosis (ISR) are still unclear. Objective: To assess the impact of MB on ISR using intravascular ultrasound (IVUS). Methods: In the Harmonizing Outcomes with Revascularization and Stents in Acute Myocardial Infarction (HORIZONS-AMI) trial, 100 left anterior descending artery (LAD) culprit lesions (79 treated with paclitaxel-eluting stents [PES] and 21 treated with bare metal stents) were imaged with serial IVUS immediately postprocedure and at 13 months. Results: At baseline the LAD stent extended into the MB segment beyond the culprit lesion in seven patients (MB-stent group). In the remaining 93 patients the LAD stent was implanted only in the culprit lesion without extending into t...

2010-01-01

9

Treatment of hilar cholangiocarcinoma with inserting biliary double stents  

International Nuclear Information System (INIS)

Objective: To investigate the inserting technique of biliary double stents in treating hilar cholangiocarcinoma. Methods: 6 patients with hilar cholangiocarcinoma (Bismuth IV) were treated by percutaneous transhepatic insertion of biliary stents. Double stents were inserted in each patient. Different inserting methods were adopted according to the branch angles formed by left and right hepatic ducts. Results: The jaundice of all patients alleviated or disappeared obviously after stent implantation. The average difference between post-and pre-operation in the serum total bilirubin level was (104 #+-# 29) #mu#mol/L (P<0.01). Stent obstruction was found in 2 cases after 4 and 6 months respectively. Conclusion: Double stents implantation is effective for the treatment of hilar cholangiocarcinoma. Beware of the angulation ...

2004-10-01

10

The Significance of Clopidogrel Low-Responsiveness on Stent Thrombosis and Cardiac Death Assessed by the Verifynow P2Y12 Assay in Patients With Acute Coronary Syndrome Within 6 Months After Drug-Eluting Stent Implantation  

UK PubMed Central (United Kingdom)

Background and ObjectivesClopidogrel resistance or low-responsiveness may be associated with recurrent atherothrombotic events after drug-eluting stent (DES) implantation. We prospectively...Full Text Available

2009-12-01

11

Palliation of malignant esophageal obstruction and fistulas with self expandable metallic stents  

UK PubMed Central (United Kingdom)

AIM: To evaluate the efficacy of self expandable metallic stents (SEMS) in patients with malignant esophageal obstruction and fistulas.METHODS: SEMS were implanted in the presence of fluoroscopic...Full Text Available

2010-12-07

12

Effects of an Alpha-4 Integrin Inhibitor on Restenosis in a New Porcine Model Combining Endothelial Denudation and Stent Placement  

UK PubMed Central (United Kingdom)

Restenosis remains the main complication of balloon angioplasty and/or stent implantation. Preclinical testing of new pharmacologic agents preventing restenosis largely rely on porcine models, where...Full Text Available

13

Imaging of coronary artery stents using multislice computed tomography: in vitro evaluation  

Energy Technology Data Exchange (ETDEWEB)

The aim of this study was to evaluate imaging features of different coronary artery stents during multislice CT Angiography (MSCTA). Nineteen stents made of varying material (steel, nitinol, tantalum) and of varying stent design were implanted in plastic tubes with an inner diameter of 3 mm to simulate a coronary artery. The tubes were filled with iodinated contrast material diluted to 200 Hounsfield units (HU), closed at both ends and positioned in a plastic container filled with oil (-70 HU). The MSCT scans were obtained perpendicular to the stent axes (detector collimation 4 x 1 mm, table feed 2 mm/rotation, 300 mAs, 120 kV). Axial images and multiplanar reformations were evaluated regarding artifact size, lumen visibility, and intraluminal attenuation values. Artifacts characterized by artifactual thickening of the stent struts leading to apparent reduction ...

2003-04-01

14

Two stents insertion via single tract for treatment of hepatic hilar cholangiocarcinoma  

International Nuclear Information System (INIS)

Objective: To evaluate the feasibility and clinical application of two stents insertion via single tract for treatment of hepatic hilar cholangiocarcinoma. Methods: Eighteen patients with hepatic hilar cholangiocarcinoma who had left and right bile duct obstruction were treated with stents insertion via right bile duct puncturing routeway. These two stents were implanted between right and left bile duct, and between right bile duct and common bile duct. Results: Eighteen patients obtained successful two stents placement by right bile duct puncturing tract and succeeded with internal drainage for all biliary tree jaundice subsided distinctly. Conclusions: The technique of two stents insertion via single tract could predigest interventional drainage procedure of high bile duct obstruction, reduce operation trauma, shorten handling time and possess promising ...

2003-12-01

15

Self-expanding nitinol stents for treatment of infragenicular arteries following unsuccessful balloon angioplasty  

Energy Technology Data Exchange (ETDEWEB)

The feasibility of self-expanding nitinol stents for treatment of infragenicular arteries following unsuccessful balloon angioplasty was assessed. Options for lower limb percutaneous revascularization are limited, especially for complex vessel obstruction. Depending on the lesion and the experience of the interventionalist, the failure rate of balloon angioplasty (PTA) ranges between 10 and 40%. Until recently, no self-expanding stent for the use in the infragenicular arteries was available. This is the first report of the results for 18 consecutive patients who received 4F sheath compatible self-expanding nitinol stents following unsuccessful PTA or early restenosis. Twenty-four stents were implanted in 21 lesions for various indications residual stenosis >50% due to heavy calcification, flow-limiting dissection, occluding thrombus resistant to thrombolyis, thrombaspiration, ...

2007-08-15

16

The Primary Patency and Fracture Rates of Self-Expandable Nitinol Stents Placed in the Popliteal Arteries, Especially in the P2 and P3 Segments, in Korean Patients  

Energy Technology Data Exchange (ETDEWEB)

We wanted to evaluate the status of self-expandable nitinol stents implanted in the P2 and P3 segments of the popliteal artery in Korean patients. We retrospectively analyzed 189 consecutive patients who underwent endovascular treatment for steno occlusive lesions in the femoropopliteal artery from July 2003 to March 2009, and 18 patients who underwent stent placement in popliteal arterial P2 and P3 segments were finally enrolled. Lesion patency was evaluated by ultrasound or CT angiography, and stent fracture was assessed by plain X-rays at 1, 3, 6 and 12 months and annually thereafter. At the 1-month follow-up, stent fracture (Type 2) was seen in one limb (up to P3, 1 of 18, 6%) and it was identified in seven limbs at the 3-month follow-up (Type 2, Type 3, Type 4) (n = 1: up to P2: n = 6: P3). At the 6-month follow-up, one more fracture (Type 1) (up to P3) was noted. At the 1-year ...

2011-04-15

17

Heterotopic transcatheter tricuspid valve implantation: first-in-man application of a novel approach to tricuspid regurgitation  

UK PubMed Central (United Kingdom)

AimsTranscatheter treatment of heart valve disease is well established today. However, for the treatment of tricuspid regurgitation (TR), no effective catheter-based approach is...Full Text Available

2011-05-01

18

Intestinal Ischemia for estenosis of the superior mesenteric artery, Treatment with angioplastia and stent implant  

International Nuclear Information System (INIS)

Chronic mesenteric arterial ischemia is an uncommon condition associated a high morbidity and mortality. It is most Commonly caused by atherosclerotic occlusive disease. Patients may suffer epigastric or periumbilical postprandial pain ten to thirty minutes after eating. A case of chronic mesenteric artery stenosis, the diagnosis was performance with colonoscopy and biopsy. We present a case report of a patient with chronic mesenteric ischemia. Mesenteric arteriography was performed and documented estenosis of the mesenteric superior artery. Then percutaneous arteriography with angioplasty and implant of stent was performed. The patients became completely asymptomatic and normal colon mucous is observed in control colonoscopy. The purpose of this report is to present the case endoscopy, clinic and radiological features and to describe the percutaneous angioplasty and implant of stent. We believe that ...

19

Treatment of peripheral aneurysms by dacron-covered nitinol stents; Behandlung arterieller Aneurysmen der Becken-Bein-Gefaesse mittels Dacron-ummantelter Nitinol-Stents  

Energy Technology Data Exchange (ETDEWEB)

Purpose: To evaluate the success rates of the implantation of stent grafts in the treatment of peripheral aneurysms. Materials and methods: in 13 patients with 15 aneurysms at the common iliac artery (n = 6), external iliac artery (n = 1), hypogastric artery (n = 2), femoral artery (n = 2) or popliteal artery (n = 4), implantation of dacron-covered nitinol stents was performed. The patients were followed up for three to 20 months (mean, 8.8 months) with intravenous digital subtraction angiography, CT or colour-coded Doppler sonography. Results: In all cases, the aneurysm was successfully occluded after stent implantation. In one case with a popliteal aneurysm, kinking of the vessel caused thrombosis of the stent. The stent was successfully reopened. The aneurysm however, had to be surgically treated 9 months later. The ...

1998-03-01

20

Self-expandable stent loaded with {sup 125}I seeds: Feasibility and safety in a rabbit model  

Energy Technology Data Exchange (ETDEWEB)

Objective: To evaluate technical feasibility and acute and subacute radiotolerance of a self-expandable stent loaded with {sup 125}I seeds in the rabbit esophagus. Methods: A self-expandable stent designed for esophageal application was made of 0.16 mm nitinol wire and loaded with {sup 125}I seeds (CIAE-6711). Twenty-seven stents with three different radioactive dosages (n = 9 in each dosage group) were implanted in the esophagus of healthy rabbits, while nine stents alone were used as controls. The stents were perorally deployed into the esophagus under fluoroscopic guidance. Radiological follow-up included plain chest film, CT scan, and barium esophagography which were undertaken in all rabbits of each group at 2, 4, and 8 weeks, respectively, which were correlated to histopathological findings. The stented esophageal segments along with ...

2007-02-15

21

Modified nasolacrimal duct stenting  

International Nuclear Information System (INIS)

Objective: Traditional nasolacrimal duct stenting possesses some shortcoming including difficulty of pulling ball head guide wire from the nasal cavity with turbinate hypertrophy and nasal septal deviation. The new method of nose-oral tube track establishment can overcome the forementioned and increase the successful rate. Methods: 5 F catheter and arterial sheath were modified to be nasolacrimal duct stent delivery device respectively. Antegrade dacryocystography was taken firstly to display the obstructed site and followed by the modified protocol of inserting the guide wire through nasolacrimal duct and nasal cavity, and establishing the stent delivery track for retrograde stent placement. Results: 5 epiphora patients with failure implantation by traditional method were all succeeded through the modified stenting (100%). During 6-mouth follow-up, no serious ...

2008-06-01

22

The Primary Patency and Fracture Rates of Self-Expandable Nitinol Stents Placed in the Popliteal Arteries, Especially in the P2 and P3 Segments, in Korean Patients  

UK PubMed Central (United Kingdom)

ObjectiveWe wanted to evaluate the status of self-expandable nitinol stents implanted in the P2 and P3 segments of the popliteal artery in Korean patients.Materials...Full Text Available

2011-03-01

23

Transcatheter stent implantation to treat aortic coarctation in infancy.  

UK PubMed Central (United Kingdom)

A ten week old girl who had previously undergone a palliative procedure for the hypoplastic left heart syndrome had unrelieved aortic coarctation that did not respond to standard balloon dilatation....Full Text Available

1993-01-01

24

Neointimal hyperplasia persists at six months after sirolimus-eluting stent implantation in diabetic porcine  

UK PubMed Central (United Kingdom)

BackgroundObservational clinical studies have shown that patients with diabetes have less favorable results after percutaneous coronary intervention compared with the non-diabetic...Full Text Available

25

Left Main Stent Thrombosis Complicated by Eptifibatide-Induced Acute Thrombocytopenia  

UK PubMed Central (United Kingdom)

A 57-year-old man with a history of coronary artery disease and placement of an implantable cardioverter-defibrillator presented at our emergency room with an anterior ST-elevation myocardial infarction....Full Text Available

2011-01-01

26

A Polyhydroxybutyrate Biodegradable Stent: Preliminary Experience in the Rabbit  

International Nuclear Information System (INIS)

Purpose: The lifelong persistence of foreign bodies within the arteries may contribute to restenosis. Thus,biodegradable devices might decrease recurrence rates. Methods: Eleven polyhydroxybutyrate biodegradable stents and 13 tantalum stents were implanted into the iliac arteries of New Zealand white rabbits for up to 30 weeks. After killing the animals,the specimens were harvested, fixed in formalin, processed in paraffin,and stained. Results: Polyhydroxybutyrate instigated intense inflammatory and proliferative reactions with an increase in collagen (2.4- to 8-fold vs native segments), thrombosis and in-stentlumen narrowing (375.5-606.6 mm vs 655.6 #+-# 268.8 mm in native segments). The elastic membranes were destroyed in all specimens. The tantalum stents increased the in-stent lumen progressively (769.7 #+-# 366.6 mm vs 1309.9 #+-# 695.3 mm),penetrated the external elastic ...

2002-03-01

27

Percutaneous therapy of inoperable biliary stenoses and occlusions with a new self-expanding nitinol stent (SMART); Perkutane Therapie inoperabler maligner Stenosen und Verschluesse der Gallenwege mit einem neu entwickelten selbstexpandierbaren Nitinolstent (SMART)  

Energy Technology Data Exchange (ETDEWEB)

Objective: To evaluate the treatment of malignant biliary stenoses and occlusions using a new stent. Methods: In a prospective study, 25 patients with malignant obstructive jaundice were treated with SMART stents. The handling and the quality of stent expansion were documented. Stent function was assessed 2-4 days after intervention by cholangiography and laboratory tests. A follow-up was performed three months, after stent placement. Results: All lesions were treated successfully, with a total of 35 stents implanted. In 14 patients a further balloon dilatation was performed after stent placement (8-10 mm diameter/40-80 mm length). The mean serum bilirubin level decreased significantly from 11.6 mg/dl to 4.6 mg/dl after intervention (p<0.05). The follow-up showed a mean serum bilirubin level at 4.0 mg/dl. In 4 ...

2002-10-01

28

Clinical Evaluation of the Zilver Vascular Stent for Symptomatic Iliac Artery Disease  

British Library Electronic Table of Contents (United Kingdom)

PurposeTo evaluate the safety and effectiveness of the Zilver vascular stent in the treatment of de novo or restenotic lesions in the external and common iliac arteries.Materials and MethodsRegardless of the results of an initial percutaneous transluminal angioplasty (PTA), 151 consecutive patients were implanted with Zilver vascular stents (Cook, Bloomington, Ind) in up to two stenotic (?10 cm) or occluded (?5 cm) atherosclerotic lesions of the external or common iliac arteries. The primary endpoint was the rate of major adverse events within 9 months after the procedure. Major adverse events were defined as death, myocardial infarction, target lesion revascularization, and limb loss. Secondary endpoints included acute procedural success, 30-day clinical success, 9-month pat...

2008-01-01

29

Usefulness of multifunctional gastrointestinal coil catheter for colorectal stent placement  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this study was to evaluate the usefulness of a multifunctional gastrointestinal coil catheter for stent placement in 98 patients with colorectal strictures. The catheter was used in 98 consecutive patients for stent placement in the rectum (n = 24), recto-sigmoid (n = 13), sigmoid (n = 38), descending (n = 6), transverse (n = 11), splenic flexure (n = 3), hepatic flexure (n = 2), and ascending (n = 1) colon. The catheter was made of a stainless steel coil (1.3 mm in inner diameter), a 0.4-mm nitinol wire, a polyolefin tube, and a hemostasis valve. Usefulness of the catheter was evaluated depending on whether the catheter could pass a stricture over a guide wire and whether measurement of the stricture length was possible. The passage of the catheter over a guide wire beyond the stricture was technically successful and well tolerated in 93 (94.9%) of 98 patients. In the failed five patients, it was not ...

2008-11-15

30

Magnetic resonance imaging in patients with heart valve prostheses  

International Nuclear Information System (INIS)

Artifical valve prostheses are often regarded as a contraindication for magnetic resonance imaging (MRI), although preliminary in vitro studies suggested, that patients with these metallic implants might safely undergo MR examination. This study reports on the experience with a group of 89 patients with 100 heart valve prostheses who were examined by spin-echo MR and gradient-echo MR. MR examination was performed in all patients without complications. The spin-echo sequence showed advantages in the depiction of anatomical structures like paravalvular abcesses. Anatomical structures adjacent to the artificial valve were clearly visivle and the metal components of the valves showes no or only small artifacts. Artifacts were accentuated when using gradient-echo sequences. Gradient-echo sequences provided valuable information regarding the presence of valvular insufficiency. ...

31

A new concept for covered stent protected carotid angioplasty: an ex vivo study  

Energy Technology Data Exchange (ETDEWEB)

Objective: To determine the efficacy of a covered stent prototype designed for protected carotid angioplasty to reduce cerebral embolization. Material and Method: The covered stent tested is made of nitinol, coated with a polyurethane membrane (MembraX{sup TM}; porous size 80 {mu}m). In a bench-top model (flow-rate 650 ml/min, pulsatile flow [dicrote] 123 Pulses/min, pressure 100/60 mm Hg [mean pressure 80 mmHg]) with inserted human carotid (n=6) stent implantation was performed (8/32 mm). Passed particles (mg) were determined in the effluent of a 100 {mu}m filter prior to intervention, after stent deployment and after final dilation (5 mm). Results: When stenting carotid arteries obtained from human cadavers, the highest rate of particle embolization was measured while crossing the lesion with the delivery device (6,8 mg; for all p<0,05), embolization ...

2003-12-01

32

High-field MR imaging in the follow-up of patients with valvular and composite tubular aortic prostheses  

International Nuclear Information System (INIS)

Eleven patients who had undergone cardiac surgery were studied by means of high-field MR imaging (1.5 T). Six patients had aortic root and valve replaced with a Bjork-Shiley (BS) composite tubular aortic graft prosthesis for acute dissection of ascending aorta. In the other 5 patients with rheumatic calcific aortic disease, the valve had been replaced with a BS prosthesis. As a whole, MR studies were 14. Previous evaluations of magnetic field effects had seem carried out ex vivo on both BS valves and BS composite prostheses, on surgical ligation clips (Tantalium and Stainless) and on stainless wires for sternal closure. In 4 patients (2 BS composite grafts, and 2 BS valves) MRI diagnosed chronic dissection of both arch and descending aorta. In 1 of them, with a bs valve, associated localized acute dissection of ascending aorta was observed. In 3 patients with BS composite grafts, ...

33

Platelet thrombosis in cardiac-valve prostheses  

International Nuclear Information System (INIS)

The contribution of platelets and clotting factors in thrombosis on cardiovascular prostheses had been quantified with several tracers. Thrombus formation in vivo could be measured semiquantitatively in animal models and patients with indium-111, Technetium-99m labeled platelets, iodine-123, iodine-131 labeled fibrinogen, and In-111 and Tc-99m labeled antibody to the fibrinogen-receptor on the platelet- membrane, or fibrin. The early studies demonstrated that certain platelet-inhibitors, e.g. sulfinpyrazone, aspirin or aspirin- persantine increased platelet survival time with mechanical valves implanted in the baboon model and patients. Thrombus localization by imaging is possible for large thrombus on thrombogenic surface of prosthesis in the acute phase. The majority of thrombus was found in the sewing ring (Dacron) in the acute phase in both the mechanical and tissue valves. The amount of retained thrombus in both ...

1989-06-08

34

Metallic implants and exposure to radiofrequency radiation  

International Nuclear Information System (INIS)

There is increasing use of radiofrequency radiation (RFR) in industry for communications, welding, security, radio, medicine, navigation etc. It has been recognised for some years that RFR may interact with cardiac pacemakers and steps have been taken to prevent this interference. It is less well recognised that other metallic implants may also act as antennas in an RFR field and possibly cause adverse health effects by heating local tissues. There are a large and increasing number of implants having metal components which may be found in RFR workers. These implants include artificial joints, rods and plates used in orthopaedics, rings in heart valves, wires in sutures, bionic ears, subcutaneous infusion systems and (external) transdermal drug delivery patches"1. The physician concerned with job placement of such persons requires information on the likelihood of an implant ...

35

A Covered Nitinol Stent Fracture in a Patient with a Malignant Esophageal Stricture: A Case Report  

Energy Technology Data Exchange (ETDEWEB)

Self-expanding metallic stent insertion has been widely applied for the palliative treatment of malignant esophageal strictures. Although it is known as an easy, safe, and effective procedure, complications are well known and include things such as stent migration and esophageal stent occlusion caused by tumor in growth. However, metallic stent fractures have been rarely reported in the esophagus, especially for nitinol stents. We report a case of a stent fracture associated with migration in a patient with a malignant esophageal stricture near the gastroesophageal junction. It is highly probable that the stent fracture was due to chemical erosion of the stent caused by gastric juice

2008-11-15

36

Stent expansion: a combination of delivery balloon underexpansion and acute stent recoil reduces predicted stent diameter irrespective of reference vessel size  

UK PubMed Central (United Kingdom)

BackgroundThere is a strong inverse relationship between final vessel diameter and subsequent risk of treatment failure after coronary stent deployment. The aim of this study was...Full Text Available

2007-12-01

38

In vitro investigation of biological and technical prosthetic heart valves in MRI: evaluation of possible deflection and heating of the implants; In-vitro-Untersuchung von biologischen und technischen Herzklappenprothesen im MRT: Beurteilung moeglicher Anziehung und Erhitzung der Implantate  

Energy Technology Data Exchange (ETDEWEB)

Purpose: In vitro evaluation of possible deflection and heating of present-day prosthetic heart valves, 12 technical and 5 biological, were investigated using a 1.5 Tesla Siemens Vision system. Deflection was measured at the edge of a 1.5 Tesla superconducting magnet. Each valve was then submerged in a vial of a 1/1 electrolyte solution and temperature was measured before and after imaging with a turbo-spin-echo sequence (TR 5200 ms, TE 138 ms, Flip angle 180 C, acquisition time 10.5 minutes, length of echo train 29). MR imaging was performed with phase encoding parallel and perpendicular to the plane of the valves. Results: None of the investigated prosthetic heart valves was deflected. The maximal observed temperature rise was 0.5 C. During MR investigation of the prostheses, artifacts caused by metallic parts were less evident using a spin-echo sequence than a gradient-echo sequence. Conclusions: ...

2000-02-01

39

TECHNICAL REPORT - NASA Technical Reports Server  

Science.gov (United States)

VORTEX VALVE FLOW CHARACTERISTICS. 49. VENTED VORTEX VALVE. 50. VORTEX DIVERTER VALVE- ... 46 AND VORTEX MIXING VALVE FLOW CHARACTERISTICS ...

40

Heart Valve Replacement  

Medline Plus

X-Plain Heart Valve Replacement Reference Summary Introduction Sometimes people have serious problems with their heart valves. A heart valve repair or ...

41

Treatment of malignant gastroduodenal obstruction with using a newly designed complex expandable nitinol stent: initial experiences  

Energy Technology Data Exchange (ETDEWEB)

We wanted to evaluate the usefulness of a new type of a complex expandable nitinol stent that was designed to reduce the stent's propensity to migration during the treatment of malignant gastroduodenal obstructions. Two types of expandable nitinol stent were constructed by weaving a single thread of 0.2mm nitinol wire in a tubular configuration: an uncovered stent 18mm in diameter and a covered stent 16mm in diameter. Both ends of the covered stent were fabricated by coaxially inserting the covered stent into the tubular uncovered stent and then attaching the two stents together with using nylon monofilament. Under fluoroscopic guidance, the stent was placed in 29 consecutive patients (20 men and 9 women, mean age: 65 years) who were suffering with malignant gastric ...

2005-12-15

42

Freeze protection valve for solar heaters  

Energy Technology Data Exchange (ETDEWEB)

This patent describes a solar heater freeze protection valve apparatus comprising in combination: a valve housing; a remote sensor operatively connected to the valve housing from a remote position, the remote sensor including a bulb containing a liquid adapted to compress and expand with the temperature adjacent the bulb; a piston located in the valve body and slidable responsive to expansion and contraction of the liquid in the remote sensor; a first valve element located in the valve housing and attached to the valve piston for movement; a second valve element located in the valve housing and attached to the housing; a first valve seat in the second valve element forming an opening; a second valve seat positioned in a water passageway ...

1987-07-21

43

MRT of carotid stents: influence of stent properties and sequence parameters on visualization of the carotid artery lumen; MRT bei Karotisstens: Einfluss von Stenteigenschaften und Geraeteparametern auf die Darstellbarkeit des Karotislumens  

Energy Technology Data Exchange (ETDEWEB)

Purpose: To evaluate MR artifacts of carotid artery stents and to optimize stent properties and sequence parameters. Material and Methods: Four carotid artery stents - Wallstent (mediloy), Precise (nitinol), ACCULINK (nitinol) and a stent prototype (nitinol) - were investigated in a flow model of the cervical vessels. The model was made of silicon tubing and a flow pump that produces realistic flow curves of the carotid artery. To investigate the effects of magnetic susceptibility and radiofrequency induced shielding artifacts, turbo spin echo and gradient echo sequences as well as CE-MRAs were measured. To improve the visualization of the stent lumen in a CE-MRA, flip angle as well as geometry and covering of the stent prototype were altered. Results: Susceptibility artifacts in stents of the carotid artery only influence the lumen ...

2005-03-01

44

Influence of manufacturing methods on the homogeneity and properties of nitinol tubular stents  

Energy Technology Data Exchange (ETDEWEB)

Nitinol has found growing applications in vascular stents, with the recent introduction on the market of a number of new nitinol tubular devices for coronary and peripheral usage. These stents can be produced either through the expansion of a pattern cut on a small tube (pre-cut) or by cutting the deployed design on a tube of a larger size (pre-expanded). The aim of the study was to analyze the differences of properties induced by the two manufacturing methods. For this purpose, differential scanning calorimetry (DSC) measurements were performed on various specimens from the two types of stents. A first set of measurements shows that pre-expanded stents exhibit usual A<->R<->M transformations whereas multi-stage transformations occur for pre-cut stents. Two types of DSC specimens were then prepared for each stent, corresponding to the ...

2001-11-01

45

Fabrication and in vitro deployment of a laser-activated shape memory polymer vascular stent  

UK PubMed Central (United Kingdom)

BackgroundVascular stents are small tubular scaffolds used in the treatment of arterial stenosis (narrowing of the vessel). Most vascular stents are metallic and are deployed either...Full Text Available

46

Drug-Eluting Stents versus Bare Metal Stents in Unprotected Left Main Coronary Artery Stenosis: a Meta-Analysis  

UK PubMed Central (United Kingdom)

ObjectivesWe undertook a meta-analysis to assess outcomes for drug-eluting (DES) and bare metal stents (BMS) in percutaneous coronary intervention (PCI) for unprotected...Full Text Available

2010-06-01

47

A newly designed big cup nitinol stent for gastric outlet obstruction  

UK PubMed Central (United Kingdom)

AIM: To find out whether a newly designed big cup nitinol stent is suitable for treatment of patients with gastric outlet obstruction resulting from gastric cancer.METHODS: The new stent is composed...Full Text Available

2010-09-07

48

Poly-lactic-acid coating of endovascular stents: preliminary results in canine experimental av-fistulae  

Energy Technology Data Exchange (ETDEWEB)

Poly-Lactic-Acid (PLA) was evaluated for coating of vascular endoprotheses in the treatment of experimental arterio-venous-fistulae (AVF). Bilateral carotid-external jugular AVF were created in 5 adult dogs. 7 PLA coated nitinol stents were placed via a transfemoral approach covering 5 AVF. The contralateral AVF remained untreated. Angiography was performed immediately after stent placement, at weeks 1 and 3 and at months 3, 6 and 9. All grafts were removed and underwent histologic examination. In 2 cases the occlusion of the AVF was successful, while misplacement occurred in 3 cases. Occlusion of the parent vessel was disclosed in 3 cases. Histologic examination revealed a mild inflammatory reaction with the presence of macrophages. There was no foreign-body reaction or fragmentation of the arterial vessel wall. PLA, which is a well-known biodegradable material, showed a good mid-term biocompatibility. Elastic mismatch of the non-elastic ...

2001-02-01

49

The platinum chromium element stent platform: from alloy, to design, to clinical practice  

British Library Electronic Table of Contents (United Kingdom)

Despite advances in polymer and drug technology, the underlying stent platform remains a key determinant of clinical outcome. A clear understanding of stent design and the differences between various stent platforms are of increasing importance for the interventional cardiologist. Reduction in stent strut thickness has been associated with improved stent deliverability, improved procedural outcome, and lower rates of subsequent restenosis. Newer-generation 316L-SS stent designs have enabled reduced strut thickness while retaining radial strength and minimizing recoil, but with significant loss of radiopacity, leading to reduced visibility. Cobalt chromium alloys have enabled a reduction in stent strut thickness to around 80?90 mm while retaining modest radiopacity, but due to higher elasti...

2010-01-01

50

Evaluation of the compressive mechanical properties of endoluminal metal stents.  

Science.gov (United States)

The mechanical properties of metal stents are important parameters in the consideration of stent design, matched to resist arterial recoil and vascular spasm. The purpose of this study was to develop a system for a standardized quantitative evaluation of the mechanical characteristics of various coronary stents. Several types of stents were compressed by external hydrostatic pressure. The stent diameter was assessed by placing a pair of small ultrasonic sono-crystals on the stent. From pressure-strain diagrams the ultimate strength and radial stiffness for each stent were determined. For all stents, except the MICRO-II and the Wiktor stent, the diameter decreased homogeneously until an ultimate compressive strength was exceeded, causing an abrupt collapse. Expanded to 3 mm, the mechanical behavior of ...

1998-06-01

51

RESEARCH STUDY OF THE VORTEX VALVE FOR - NASA Technical Reports Server  

Science.gov (United States)

Vortex Valve Flow Characteristics. Basic Circuit Schematic. System Test Installation. Flight-Weight Design of SITVC System. Staged Vortex Valve SITVC ...

52

//s /~7 - NASA CR-  

Science.gov (United States)

Valve Flow Characteristics. 3-68. 3-40. Valve Operating Current Vs. Temperature ...... VALVE FLOW CHARACTERISTICS. Acceptance Test 4/29/74. SINs 002 & 004 ...

53

Percutaneous Treatment of Malignant Jaundice Due to Extrahepatic Cholangiocarcinoma: Covered Viabil Stent Versus Uncovered Wallstents  

International Nuclear Information System (INIS)

To compare clinical effectiveness of Viabil-covered stents versus uncovered metallic Wallstents, for palliation of malignant jaundice due to extrahepatic cholangiocarcinoma, 60 patients were enrolled in a prospective and randomized study. In half of the patients a bare Wallstent was used, and in the other half a Viabil biliary stent. Patients were followed up until death. Primary patency, survival, complication rates, and mean cost were calculated in both groups. Stent dysfunction occurred in 9 (30%) patients in the bare stent group after a mean period of 133.1 days and in 4 (13.3%) patients in the covered stent group after a mean of 179.5 days. The incidence of stent dysfunction was significantly lower in the covered stent group (P = 0.046). Tumor ingrowth occurred exclusively in the bare stent group (P = 0.007). Median ...

2010-02-01

54

A retrievable nitinol endobronchial stent : an experimental study in dog  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this study was to evaluate the safety and the retrievability of a new covered retrievable nitinol tracheobronchial stent. Stents were knitted from 0.2mm nitinol wire, covered with polyurethane, and were 20-22mm in diameter and 2cm in length. Under fluoroscopic guidance, a stent was placed in the normal right bronchus intermedius of ten dogs. Using a retrieval hook, stent retrieval was attempted after 1 month(N=5) or 2 months(N=5). After removal, the dogs were sacrificed and their their tracheobronchial trees were examined grossly and histologically. Eleven stents were successfully placed in ten dogs. Migration and expectoration occurred in four of ten stents in nine dogs(40%). Five stents were successfully removed from six dogs(83%). Without significant difference between the two groups, mild to moderate mucosal hyperplasia ...

1999-06-01

55

Magnetic resonance imaging of stents. Quantitative in vitro examination at 3 Tesla; Magnetresonanztomographie von Stents. Quantitative MR-Untersuchungen in vitro bei 3 Tesla  

Energy Technology Data Exchange (ETDEWEB)

The aim of this study was to qualitatively and quantitatively study MR artifacts of various stents on the basis of in vitro experiments. We were particularly interested whether sequence type and orientation of the stent with respect to the static magnetic field influences the artifact. We examined 18 stents of different material (nitinol, stainless steel, cobalt alloy), different design of the stent meshes (AccuLink, OmniLink, DynaLink, Xact, Protoge, Wallstent Monorail), different diameter (5-10 mm) and different length (18-58 mm) with a turbo spin echo (TSE), a 2D-fast low angle shot (FLASH) and a 3D-FLASH sequence. The MR images were examined qualitatively with respect to possible artifacts. Furthermore we examined the MR data quantitatively: The contrast-noise-ratio (CNR) was determined both within the stent and outside (within the tube); based on these values we calculated the ...

2009-07-01

56

A Dual Expandable Nitinol Stent: The Long-term Results in Patients with Malignant Gastroduodenal Strictures  

Energy Technology Data Exchange (ETDEWEB)

We wanted to evaluate the long-term results of a dual expandable nitinol stent for the palliative treatment of malignant gastroduodenal strictures. The dual stent consists of two stents; an outer partially nylon covered stent and an inner bare nitinol stent. The outer stent was placed into the stricture and this was followed by coaxial placement of the inner bare stent. Using fluoroscopic guidance, dual expandable stents were placed in 86 patients with inoperable malignant gastroduodenal strictures. The technical and clinical success, the complication, survival and the stent patency were evaluated during the follow-up period. Stent placement was technically successful in 83 of the 86 patients. After stent placement, 74 of the 85 patients showed improvement of ...

2009-12-15

57

Stent-in-stent through a side hole to prevent biliary metallicstent migration  

UK PubMed Central (United Kingdom)

The covered self-expandable metallic stent (SEMS) has been developed to overcome the problem of tissue in­growth, However, stent migration is a well-known com­­plication of covered...Full Text Available

2011-03-16

58

Malignant duodenal obstructions: palliative treatment with covered expandable nitinol stent  

Energy Technology Data Exchange (ETDEWEB)

To evaluate the feasibility and clinical effectiveness of using a polyurethane-covered expandable nitinol stent in the palliative treatment of malignant duodenal obstruction. Under fluoroscopic guidance, a polyurethane-covered expandable nitinol stent was placed in 12 consecutive patients with malignant duodenal obstructions. All presented with severe nausea and recurrent vomiting. The underlying causes of obstruction were duodenal carcinoma (n=4), pancreatic carcinoma (n=4), gall bladder carcinoma (n=2), distal CBD carcinoma (n=1), and uterine cervical carcinoma (n=1). The sites of obstruction were part I (n=1), part II (n=8), and III (n=3). Due to pre-existing jaundice, eight patients with part II obstructions underwent biliary decompression prior to stent placement. An introducer sheath with a 6-mm outer diameter and stents 16 mm in diameter were employed, and to place the stent, ...

2002-04-01

60

Collapse pressures of bilayered biodegradable stents  

British Library Electronic Table of Contents (United Kingdom)

Biodegradable helicoidal stent prototypes made up of layers of poly-L-lactic acid (PLLA) and poly(L-lactic-co-glycolic acid) (PLGA) polymers were fabricated by temperature conditioning the stents at different stages of fabrication. The process incorporated elastic memory, or self-expandability in the stent, which is desirable to minimize stent recoil. The collapse pressures of such stents were studied, with and without in vitro degradation. The effects of thickness and the composition of each layer on the collapse pressure were modeled using the simple series model. Results of the in vitro studies for over 3 months showed that collapse pressure of the stents depended mainly on the degradation and other side-effects brought about by the degradation of different polymer compositions. General...

2006-01-01

61

Efficacy of a paclitaxel-eluting nitinol stent on the inhibition of pseudointimal hyperplasia in a transjugular intrahepatic portosystemic shunt: an experimental study in a swine model  

Energy Technology Data Exchange (ETDEWEB)

To evaluate the efficacy of a paclitaxel-eluting nitinol stent on the inhibition of pseudointimal hyperplasia in a transjugular intrahepatic portosystemic shunt. Twelve pigs were used in this study. Two types of 10-mm diameter and 60-mm long nitinol stents were made for a transjugular intrahepatic portosystemic shunt by coating them with a polyurethane solution, with and without paclitaxel. Each transjugular intrahepatic portosystemic shunt was created successfully in the 12 swine with 7 paclitaxel-eluting stents and 5 polyurethane stents. Five swine in each group were followed-up for 14 days due to the death of 2 swine given the paclitaxel-eluting stents. The proliferation of the pseudointima was evaluated on both follow-up portograms and histopathology examinations. The mean maximum pseudointimal hyperplasia is expressed as the percentage of the stent radius. ...

2007-03-15

62

Dilatation of Stent-Grafts by Luminal Pressures: Experimental Evaluation of Polytetrafluoroethylene (PTFE) and Woven Polyester Grafts  

International Nuclear Information System (INIS)

Purpose: To evaluate the effect on dilatation of three types of covering materials used for endovascular stent-grafts.Methods: Stent-grafts with three types of covering material [0.1-mm polytetrafluoroethylene (PTFE), 0.2-mm PTFE, and 0.15-mm woven polyester] were placed in a fluid circuit. For the pulsatile pressure test, the luminal pressure of 190/130 mmHg was loaded up to 300,000 pulses. For the static pressure test, the luminal pressure was increased from 50 to 300 mmHg at 50-mmHg increments. The percent of dilatation of each stent-graft was compared.Results: The 0.1-mm PTFE stent-graft was significantly more dilated than the 0.2-mm PTFE and the 0.15-mm woven polyester stent-graft (p < 0.005) in both examinations. There was no significant difference between the 0.2-mm PTFE and the 0.15-mm woven polyester stent-grafts. The dilatation of the 0.1-mm PTFE ...

2001-03-01

63

A study on modelling of a butterfly-type control valve by a pneumatic actuator  

Energy Technology Data Exchange (ETDEWEB)

This paper studies on the modelling of a butterfly-type control valve actuating by an on-off pneumatic solenoid valve. The mathematical model is composed of nonlinear differential equations three parts: (i) a solenoid valve, (ii) a pneumatic cylinder, (iii) a rotary-type butterfly valve. The flow characteristics of the butterfly control valve is analysed by a computer simulator, then its simple transfer function is identified from the step responses.

2009-07-01

64

Stent insertion in patients with malignant biliary obstruction: problems of the Hanaro stent  

Energy Technology Data Exchange (ETDEWEB)

To investigate the problems of the Hanaro stent (Solco Intermed, Seoul, Korea) when used in the palliative treatment of patients with inoperable malignant biliary obstruction. Between January 2000 and May 2001, the treatment of 46 patients with malignant biliary obstruction involved percutaneous placement of the Hanaro stent. Five patients encountered problems during removal of the stent's introduction system. The causes of obstruction were pancreatic carcinoma (n=2), cholangiocarcinoma (n=2), and gastric carcinoma with biliary invasion (n=1). In one patient, percutaneous transhepatic cholangiography and stent insertion were performed as a one-step procedure, while the others underwent conventional percutaneous transhepatic biliary drainage for at least two days prior to stent insertion. A self-expandable Hanaro stent, 8-10 mm in deameter and 50-100 mm ...

2002-07-01

65

Treatment of Malignant Biliary Obstruction with a PTFE-Covered Self-Expandable Nitinol Stent  

Energy Technology Data Exchange (ETDEWEB)

We wanted to determine the technical and clinical efficacy of using a PTFE-covered self-expandable nitinol stent for the palliative treatment of malignant biliary obstruction. Thirty-seven patients with common bile duct strictures caused by malignant disease were treated by placing a total of 37 nitinol PTFE stents. These stents were covered with PTFE with the exception of the last 5 mm at each end; the stent had an unconstrained diameter of 10 mm and a total length of 50 80 mm. The patient survival rate and stent patency rate were calculated by performing Kaplan-Meier survival analysis. The bilirubin, serum amylase and lipase levels before and after stent placement were measured and then compared using a Wilcoxon signed-rank test. The average follow-up duration was 27.9 weeks (range: 2 81 weeks). Placement was successful in all cases. Seventy-six percent of the ...

2007-10-15

67

Woven polydioxanone biodegradable stents: a new treatment option for benign and malignant oesophageal strictures  

International Nuclear Information System (INIS)

We present our initial experience with a new biodegradable (BD) esophageal stent in two patients, one for a therapy-resistant benign esophageal stricture, and the other as a temporary measure during curative radiotherapy for oesophageal carcinoma. The BD stents need to be loaded into a conventional pull-back delivery system but are then placed in a standard fashion. Pre-dilatation should be avoided to reduce the risk of migration, however if migration occurs the stents can be left to dissolve in the stomach. The stents are radiolucent but easily identified on CT with minimal artefact and thus might even aid with radiotherapy planning. BD stents offer an exciting new strategy for therapy-resistant benign strictures as well as a supportive measure for oesophageal cancer undergoing non-surgical treatment. (orig.)

2010-05-01

68

The use of SMARTeR stents in patients with biliary obstruction  

Energy Technology Data Exchange (ETDEWEB)

AIM: The purpose of the study was to evaluate the percutaneous use of the new nitinol SMARTeR stents in patients with biliary obstruction. MATERIALS AND METHODS: Four stents were placed in three patients percutaneously under ultrasound and fluoroscopic guidance. RESULTS: The deployment of the stents was successful in all three patients. All stents maintained their patency and position after short-term follow-up. CONCLUSION: The nitinol SMARTeR stent is useful in the management of patients with biliary obstruction although accurate placement across the ampulla was found to be technically more difficult than with the Wallstent. Larger, long-term follow-up studies are required to evaluate the long-term patency of these new devices.

2004-03-01

69

Metallic stent and stereotactic conformal radiotherapy for hilar cholangiocarcinoma  

International Nuclear Information System (INIS)

Objective: To evaluate the effect of metallic stent combined with stereotactic conformal radiotherapy (SCRT) for hilar cholangiocarcinoma. Methods: Fifty-four patients with hilar cholangiocarcinoma were analyzed, including 31 treated with stent plus stereotactic conformal radiotherapy (combined group) and 23 with metallic stent alone (control group). Results: The mean survival time of combined group was 11.1 #+-# 4.6 months, compared with 5.1 #+-# 2.8 months of the control group, giving a significant difference between the two groups (P<0.01). Conclusion: The combination of metallic stent and stereotactic conformal radiotherapy is more effective than metallic stent alone for unresectable hilar cholangiocarcinoma. (authors)

2005-01-01

70

Glue embolization of aneurysm after stenting in canine carotid arteries-technical feasibility  

International Nuclear Information System (INIS)

Coiling or infusion of embolic materials into a wide necked aneurysm can be performed with stenting. The purpose of our study is to assess the technical feasibility of aneurysm treatment with glue embolization after stenting. We used four Wallstents for surgically repairing eight canine carotid aneurysms. After confirmation of the aneurysms on the angiogram, we introduced a 6-7 F guiding catheter in order to deploy the stents. After stenting, we passed a microcatheter into the aneurysm lumen through the stent mesh. 28% glue was slowly injected until the glue cast completely filled the lumen. We evaluated the passage of a microcatheter through the stent meshwork, formation of the glue cast and the stents' ability to protection for any leakage of glue. The follow-up angiogram was obtained for two dogs, one to three times until 8 weeks, and ...

2004-10-01

71

Study of Stent Deployment Mechanics Using a High-Resolution X-ray Imaging Detector  

UK PubMed Central (United Kingdom)

To treat or prevent some of the 795,000 annual strokes in the U.S., self-expanding endo-vascular stents deployed under fluoroscopic image guidance are often used. Neuro-interventionalists need...Full Text Available

2011-03-01

72

Removal of metallic tracheobronchial stents in lung transplantation with flexible bronchoscopy  

UK PubMed Central (United Kingdom)

BackgroundAirway complications are among the most challenging problems after lung transplantation, and Self-Expandable Metallic Stents (SEMS) are used to treat airway complications...Full Text Available

73

One-year analysis of the iStent trabecular microbypass in secondary glaucoma  

UK PubMed Central (United Kingdom)

Purpose:To evaluate the midterm efficacy and safety of the iStent® glaucoma device in patients with secondary open-angle glaucoma.Patients...Full Text Available

2011-01-01

74

New stent developments for peripheral arterial occlusive disease; Neue Stententwicklungen fuer die periphere arterielle Verschlusskrankheit  

Energy Technology Data Exchange (ETDEWEB)

Infrainguinal peripheral occlusive disease is increasingly being treated by endovascular techniques. Bare metal stainless steel, self-expanding nitinol stents, drug-eluting and covered stents (stent grafts) are becoming increasingly more important adjuncts to percutaneous translumninal angioplasty in the treatment of peripheral artery disease. In this article the available evidence supporting the use of stents in the femoropopliteal and tibial arteries will be described as well as their limitations. Future stent developments will also be discussed. (orig.) [German] Die endovaskulaere Therapie spielt bei der Therapie der peripheren arteriellen Verschlusskrankheit (PAVK) eine wichtige Rolle. Unbeschichtete ballonexpandierbare Stahlstents, selbstexpandierende Nitinolstents sowie medikamentenbeschichtete und ''covered stents'' ...

2010-01-15

75

Covered nitinol stents for the treatment of esophageal strictures and leaks  

UK PubMed Central (United Kingdom)

AIM: To compare 2 different types of covered esophageal nitinol stents (Ultraflex and Choostent) in terms of efficacy, complications, and long-term outcome.METHODS: A retrospective review of...Full Text Available

2010-05-14

76

Oxygen Implanted Materials  

International Science & Technology Center (ISTC)

Development of Oxygen Ion-Implanted Collector materials for Thermal Emission Converters of Thermal Energy into the Electric One.

77

Control of Phosphorus Transient Enhanced Diffusion using Co-implantation  

CERN Document Server

Control of Phosphorus Transient Enhanced Diffusion using Co-implantation

2006-01-01

78

Innovations in Stroke Prevention: An Update on Carotid Stenting  

Medline Plus

... m going to have a kink or a hinge point right behind it, I'll -- we'll ...

79

Carotid Artery Stenting Outcomes in the Standard Risk Population for Carotid Endarterectomy  

Science.gov (United States)

Carotid Artery Disease; Stroke; Amaurosis Fugax; Transient Ischemic Attack (TIA)

2011-10-03

80

Optimization of Valve Disc Using Orthogonal Array and Kriging Model  

Science.gov (United States)

A butterfly valve is a type of flow control device, typically used to regulate a fluid flowing. Currently, FEA is often used to predict the safety in the design of valve disc. Also, the study about the affection of butterfly valve's disc to the valve flow characteristics by using CFD has been done by many researchers. Along with the development of computer technique, design and analysis of computer experiments has becoming more and more important in engineering design and optimization. Hereinto Kriging model is one popular analysis approach for the purpose of creating a cheap ``meta-model'' as a surrogate to a computationally expensive simulation model. In this paper, the numerical analysis considered the strength, pressure loss coefficient and weight of valve disc simultaneously is investigated to improve the shape of a traditional butterfly valve disc. ...

2008-10-01

81

Large scale steam valve test: Performance testing of large butterfly valves and full scale high flowrate steam testing  

Energy Technology Data Exchange (ETDEWEB)

This report presents the results of the design testing of large (36-inch diameter) butterfly valves under high flow conditions. The two butterfly valves were pneumatically operated air-open, air-shut valves (termed valves 1 and 2). These butterfly valves were redesigned to improve their ability to function under high flow conditions. Concern was raised regarding the ability of the butterfly valves to function as required with high flow-induced torque imposed on the valve discs during high steam flow conditions. High flow testing was required to address the flow-induced torque concerns. The valve testing was done using a heavily instrumented piping system. This test program was called the Large Scale Steam Valve Test (LSSVT). The LSSVT program demonstrated that the redesigned ...

1995-05-01

82

Application of hydraulic network analysis to motor operated butterfly valves in nuclear power plants  

International Nuclear Information System (INIS)

This paper presents the application of hydraulic network analysis to evaluate the performance of butterfly valves in nuclear power plant applications. Required actuation torque for butterfly valves in high-flow applications is often dictated by peak dynamic torque. The peak dynamic torque, which occurs at some intermediate disc position, requires accurate evaluation of valve flow rate and pressure drop throughout the valve stroke. Valve flow rate and pressure drop are significantly affected by the valve flow characteristics and the hydraulic system characteristics, such as pumping capability, piping resistances, single and parallel flow paths, system hydrostatic pressure, and the location of the motor-operated valve (MOV) within the system. A hydraulic network analysis methodology that addresses the effect of these parameters on the MOV ...

1992-07-01

83

A retrospective comparison of endoscopic stenting alone with stenting and radiotherapy in non-resectable cholangiocarcinoma  

International Nuclear Information System (INIS)

Radiotherapy has been reported to be of benefit in prolonging the survival of patients with cholangiocarcinoma. This study examined whether radiotherapy in addition to endoscopic stenting improved survival. The survival advantage of radiotherapy in those with a type II/III stricture is seen only in the first 10 months after diagnosis. The costs of radiotherapy and significantly increased time spent in hospital, however, raise doubts over its routine use in the management of non-resectable cholangiocarcinoma. (Author).

84

A prospective evaluation of the safety and efficacy of the TAXUS Element paclitaxel-eluting coronary stent system for the treatment of de novo coronary artery lesions: Design and statistical methods of the PERSEUS clinical program  

UK PubMed Central (United Kingdom)

BackgroundPaclitaxel-eluting stents decrease angiographic and clinical restenosis following percutaneous coronary intervention compared to bare metal stents. TAXUS Element is a third-generation...Full Text Available

85

Technical Lio - NASA Technical Reports Server  

Science.gov (United States)

Mod IE did not affect the valve flow characteristics. C. BIPROPELLANT -VALVE EVALUATION. 1. Ball and Shaft Seal Evaluation ...

86

Industrial-process control valves Part2 : Flow capacity Section Four : Inherent flow characteristics and rangeability  

CERN Document Server

Industrial-process control valves Part2 : Flow capacity Section Four : Inherent flow characteristics and rangeability

1989-01-01

87

Development of linear flow rate control system for eccentric butter-fly valve  

Energy Technology Data Exchange (ETDEWEB)

Butter-fly valves are advantageous over gate, globe, plug, and ball valves in a variety of installations, particularly in the large sizes. The purpose of this project development of linear flow rate control system for eccentric butter-fly valve (intelligent butter-fly valve system). The intelligent butter-fly valve system consist of a valve body, micro controller. The micro controller consist of torque control system, pressure censor, worm and worm gear and communication line etc. The characteristics of intelligent butter-fly valve system as follows: Linear flow rate control function. Digital remote control function. guard function. Self-checking function. (author)

1999-12-01

88

64-slice multidetector coronary CT angiography: in vitro evaluation of 68 different stents  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this study was to test a large sample of different coronary artery stents using four image reconstruction approaches with respect to lumen visualization, lumen attenuation, and image noise in 64-slice multidetector-row computed tomography (MDCT) in vitro and to provide a catalogue of currently used coronary artery stents when imaged with state-of the-art MDCT. We examined 68 different coronary artery stents (57 stainless steel, four cobalt-chromium, one cobalt-alloy, two nitinol, four tantalum) in a coronary artery phantom (vessel diameter 3 mm, intravascular attenuation 250 HU, extravascular density -70). Stents were imaged in axial orientation with standard parameters: 32x0.6 collimation, pitch 0.24, 680 mAs, 120 kV, rotation time 0.37 s. Four different image reconstructions were obtained with varying convolution kernels and section thicknesses: (1) soft, 0.6 mm, (2) soft, 0.75, (3) ...

2006-04-15

89

Mechanical stability of the diamond-like carbon film on nitinol vascular stents under cyclic loading  

Energy Technology Data Exchange (ETDEWEB)

The mechanical stability of diamond-like carbon (DLC) films coated on nitinol vascular stents was investigated under cyclic loading condition by employing a stent crimping system. DLC films were coated on the vascular stent of a three dimensional structure by using a hybrid ion beam system with rotating jig. The cracking or delamination of the DLC coating occurred dominantly near the hinge connecting the V-shaped segments of the stent where the maximum strain was induced by a cyclic loading of contraction and extension. However the failures were significantly suppressed as the amorphous Si (a-Si) buffer layer thickness increased. Interfacial adhesion strength was estimated from the spalled crack size in the DLC coating for various values of the a-Si buffer layer thickness.

2008-12-01

90

The interventional treatment for biliary re-stenosis after metallic stents placement in patients with malignant obstruction due to cholangiocarcinoma  

International Nuclear Information System (INIS)

Objective: To explore the interventional treatment for biliary re-stenosis after metallic stents placement in patients due to cholangiocarcinoma and evaluate its therapeutic effect. Methods: Percutaneous metallic stents placement or combined with continuously infusion arterial chemotherapeutic and chemotherapeutic embolization were performed in 12 patients with biliary re-stenosis using 12 metallic stents. Results: Once stent placement was 100% successful in all 12 cases, TBIL, ALT, GTP and AKP values 7 days postoperatively were significantly lower than that in preoperation. Jaundice was reduced satisfactorily in 12 patients. 3 patients were undergone continuously arterial chemotherapeutics infusion and chemotherapeutic embolization 4 weeks after stents placement. Conclusions: Percutaneous replacement of biliary metallic stents was effective and safe for ...

2002-10-01

91

Analysis of the placement of multiple metallic stents in the treatment of hilar cholangiocarcinoma  

International Nuclear Information System (INIS)

Objective: To evaluate the clinical efficacy of multiple stents placement in the management of hilar cholangiocarcinoma, especially in the complex cases of which the hepatic ducts are invaded. Methods: Forty-five consecutive patients with hilar cholangiocarcinoma were treated with percutaneous transhepatic placement of two or three self-expandable metallic endoprostheses. The cause of hilar obstructions in these patients were all cholangiocarcinoma, including Bismuth classification type II (n 12), IIIa (n 17), IIIb (n 10), and IV (n 6). Two or 3 stents were placed in the configuration of T, Y or X over the strictures. Results: Stent placement with 2 or 3 endoprostheses was successful in all patients. All patients showed significant decrease in serum bilirubin level. The mortality rate within 30 days of stent placement was 2.2% (1/45). The mean survival and stent patency times were ...

2007-11-01

92

The efficacy of metallic stent placement in the treatment of colorectal obstruction  

Energy Technology Data Exchange (ETDEWEB)

To evaluate the efficacy of newly designed covered and non-covered coated colorectal stents for colonic decompression. Twenty-six patients, (15 palliative cases and 11 preoperative) underwent treatment for the relief of colorectal obstruction using metallic stents positioned under fluoroscopic guidance. In 24 of the 26, primary colorectal carcinoma was diagnosed, and in the remaining two, recurrent colorectal carcinoma. Twenty-one patients were randomly selected to receive either a type A or type B stent; for the remaining five, type C was used. Type A, an uncovered nitinol wire stent, was lightly coated to ensure structural integrity. Type B (flare type) and C (shoulder type) stents were polyurethane covered and their diameter was 24 and 26mm, respectively. The rates of technical success, clinical success, and complications were analyzed using the chi-square test, and to analyse ...

2002-06-01

93

Organisation of care for Swedish patients with an implantable cardioverter defibrillator, a national survey  

British Library Electronic Table of Contents (United Kingdom)

Aim.- To describe the clinical aspects of implantable cardioverter defibrillators care in Sweden with focus on organisation, the role and education of nurses, patient information and education and areas in need of improvement. Background.- Implantable cardioverter defibrillators implantations have developed rapidly in recent years and are now an established arrhythmia treatment. The expanding indication for implantable cardioverter defibrillators implantation demands new competencies and resources in the implantable cardioverter defibrillators team members. Methods.- Participants were recruited among physicians and nurses in all of the hospitals implanting implantable cardioverter defibrillators (n-=-16). Data were collected by a questionnaire. Additionally, all written educational materia...

2011-01-01

94

Newly developed control and stop valves  

International Nuclear Information System (INIS)

... bwr type reactors closures fluidic control devices operation performance pwr

95

Electromagnetic fluid valve  

International Nuclear Information System (INIS)

... bypasses control rod drives cylinders electromagnetic pumps fluid flow fluidic

96

Thermal-hydraulic analysis following a safety flapper valve's fault for a pool-type research reactor  

International Nuclear Information System (INIS)

One of the characteristic safety features of a pool type research reactor is a safety flapper valve. The valve enables natural convection cooling mechanism in one of the following events. (a) Opening flapper valve promote decay heat removal following reactor's shutdown. (b) Also the valve is gravity driven. There is a possibility that the valve fails to open when it is required to do so. In the present paper the cooling characteristics of the core are analyzed for this event. A steady state study was performed for 5 MW power and 18 FE following a reactor shutdown. It is shown that enough margin exists to assure adequate reactor core cooling should the safety flapper valve fails to open. (authors)

97

Recycling flow control device for a nuclear reactor  

International Nuclear Information System (INIS)

Object: To permit a valve operation test to be periodically made during plant operation without causing variations in plant power by detecting flow control valve defect on the basis of a valve aperture alteration instruction. Structure: Step signals which are equal in absolute value and opposite in sign are coupled to the input side of flow controllers provided on the recycling loops of two or more recycling flow control systems. With these inputs the aperture of the flow control valve on one side is increased (or reduced) while the aperture of the valve on the other side is reduced (or increased). As a result, the recycling flow rate in the loop on one side is increased (or reduced) while that on the other side is reduced (or increased). Whether the valve is normally operating or not is confirmed by checking the recycling flow rate and ...

98

An experimental study on stable flow control for multi-stage expansion device  

Energy Technology Data Exchange (ETDEWEB)

An Experimental study was performed to investigate flow characteristic of multi-stage expansion valve applied with inverter heat pump. Multi-stage expansion consists of parallel valve which is controlled on/off type of solenoid valve. Expansion valve open one solenoid the other closed in low frequency region and open two solenoid valve in high frequency region. In rated frequency region always open one solenoid valve and control period and on-off time ratio for the other solenoid valve. Flow characteristics of a orifice expansion was measured as a function of orifice diameter and operating conditions. As a results multi-stage expansion device can control a stable flow with period and on-off time ratio. (author). 4 refs., 7 figs., 1 tab.

1998-04-01

99

Prognostic implications of pulmonary hypertension in patients with severe aortic stenosis  

British Library Electronic Table of Contents (United Kingdom)

ObjectiveWe sought to determine the clinical outcomes of patients undergoing surgical aortic valve replacement with hemodynamically confirmed severe pulmonary hypertension and aortic stenosis and compare them with the outcomes of patients not undergoing aortic valve replacement and patients undergoing aortic valve replacement with mild-to-moderate pulmonary hypertension. MethodsA total of 317 patients with severe aortic stenosis (aortic valve area 35 mm Hg) was present in 81 patients, of whom 35 (43.2%) underwent surgical aortic valve replacement. We compared the clinical outcomes of these 35 patients with the 46 patient...

2011-01-01

100

Linearization of Valve Flow Characteristics for Steam Turbine Control  

Energy Technology Data Exchange (ETDEWEB)

The control valve for a large steam turbine must be operated linearly to be run by an automatic control system in a power plant. It is, however, found that the flow increase is much greater for a given valve position change near the closed end of travel than it is near the open end. Accordingly, the desired linearization will be achieved if the valve is opened less near the closed end of travel and greater near the open end. The previous way for linearization was to utilize the cams, which is called the mechanical hydraulic control (MHC). The MHC was afterward improved by producing the nonlinear electric compensation to the nonlinear system of control valves, viz. the electro hydraulic control (EHC)

2009-10-15

101

Linearization of Valve Flow Characteristics for Steam Turbine Control  

International Nuclear Information System (INIS)

The control valve for a large steam turbine must be operated linearly to be run by an automatic control system in a power plant. It is, however, found that the flow increase is much greater for a given valve position change near the closed end of travel than it is near the open end. Accordingly, the desired linearization will be achieved if the valve is opened less near the closed end of travel and greater near the open end. The previous way for linearization was to utilize the cams, which is called the mechanical hydraulic control (MHC). The MHC was afterward improved by producing the nonlinear electric compensation to the nonlinear system of control valves, viz. the electro hydraulic control (EHC)

2009-10-01

104

Oil pipeline valve automation for spill reduction  

Energy Technology Data Exchange (ETDEWEB)

Liquid pipeline codes generally stipulate placement of block valves along liquid transmission pipelines such as on each side of major river crossings where environmental hazards could cause or are foreseen to potentially cause serious consequences. Codes, however, do not stipulate any requirement for block valve spacing for low vapour pressure petroleum transportation, nor for remote pipeline valve operations to reduce spills. A review of pipeline codes for valve requirement and spill limitation in high consequence areas is thus presented along with a criteria for an acceptable spill volume that could be caused by pipeline leak/full rupture. A technique for deciding economically and technically effective pipeline block valve automation for remote operation to reduce oil spilled and control of hazards is also provided. In this review, industry practice is highlighted and application ...

2003-07-01

105

Correctness of multi-detector-row computed tomography for diagnosing mechanical prosthetic heart valve disorders using operative findings as a gold standard  

Energy Technology Data Exchange (ETDEWEB)

The purpose was to compare the findings of multi-detector computed tomography (MDCT) in prosthetic valve disorders using the operative findings as a gold standard. In a 3-year period, we prospectively enrolled 25 patients with 31 prosthetic heart valves. MDCT and transthoracic echocardiography (TTE) were done to evaluate pannus formation, prosthetic valve dysfunction, suture loosening (paravalvular leak) and pseudoaneurysm formation. Patients indicated for surgery received an operation within 1 week. The MDCT findings were compared with the operative findings. One patient with a Bjoerk-Shiley valve could not be evaluated by MDCT due to a severe beam-hardening artifact; thus, the exclusion rate for MDCT was 3.2% (1/31). Prosthetic valve disorders were suspected in 12 patients by either MDCT or TTE. Six patients received an operation that included three redo aortic ...

2009-04-15

106

Thoracic aortic stent graft: comparison of contrast-enhanced MR angiography and CT angiography in the follow-up: initial results  

Energy Technology Data Exchange (ETDEWEB)

The objective of this study was to compare contrast-enhanced magnetic resonance angiography (CE MRA) and multislice computed tomographic angiography (MS CTA) in the follow-up of thoracic stent-graft placement. The CE MRA and MS CTA were performed following nitinol stent-graft treatment due to thoracic aneurysm (n=4), intramural bleeding (n=2) and type-B aortic dissection (n=5). Corresponding evaluation of arterial-phase imaging characteristics focused on the stent-graft morphology and leakage assessment. Stent-graft and aneurysm extensions were comparable between both techniques. Complete exclusion (aneurysm, n=4; dissection, n=2) was assessed with high confidence with CE MRA and MS CTA. Incomplete exclusion (intramural bleeding, n=2; dissection, n=3) was assigned to lower confidence scores on CE MRA compared with MS CTA. On CE MRA the stent-graft lumen demonstrated an inhomogeneous ...

2003-07-01

107

The influence of stent design on neointimal hyperplasia of an aortic stent covering the visceral arterial ostia: an experimental study in dogs using a self-expandable nitinol stent  

Energy Technology Data Exchange (ETDEWEB)

To assess the influence of stent design [interlacing (type A) vs. crossing method (type B)] on neointimal hyperplasia using a self-expandable nitinol stent, which crosses the side branches of the abdominal aorta. In seven mongrel dogs, nitinol stents with type A and B intersections were placed in the abdominal aorta across the main branches: 4 Niti-Ms and 3 Niti-Ds. Two months after the stent placement, a DSA was performed for a stent patency evaluation, followed by the extraction of the aortas. The degree of neointimal formation along the wire was evaluated by calculating the area ratio of intimal hyperplasia (type A vs. B). A Student's t-test was employed to investigate the differences in the neointimal hyperplasia between blood types A and B. The total number of wire intersections overlain at the ostia branch ostia was 23 for type A and 36 for type B. The area ratio of ...

2008-05-15

108

Self-expandable polytetrafluoroethylene (PTFE)-covered nitinol stent for the palliative treatment of malignant biliary obstruction  

Energy Technology Data Exchange (ETDEWEB)

We wanted to determine the technical and clinical efficacy of placing a self-expandable PTFE-covered nitinol stent for the management of inoperable malignant biliary obstruction. Thirty six patients with inoperable malignant biliary obstructions were treated by placement of self-expandable PTFE-covered nitinol stents (S and G Biotech Corporation, Seongnam, Korea). Clinical evaluation was done with assessment of the serum bilirubin and alkaline phosphatase levels, which were measured before and after stent placement within 1 week, at 1 month and at 3 months. The patient survival rate and stent patency rate were calculated with performing Kaplan-Meier survival analysis. Successful stent placement was achieved in all the patients without procedure-related complication. Pancreatitis as an early complication occurred in two cases. The serum bilirubin and alkaline phosphatase levels were ...

2008-06-15

109

Bilateral brachial pull-through technique for stenting in a patient with stenosis of the vertebral artery origin: technical case report  

International Nuclear Information System (INIS)

Stenting for stenosis of the proximal vertebral artery (VA) is commonly performed via a femoral approach. However, iliofemoral occlusive disease such as arteriosclerosis obliterans sometimes prevents safe transfemoral access. In certain situations where both femoral access and ipsilateral brachial access are difficult because of a concomitant vascular diseases or particular anatomic setting, a contralateral brachial approach using the brachiobrachial pull-through technique may allow efficient and accurate stenting. A case of VA origin symptomatic stenosis successfully treated with stenting using the new pull-through technique from the contralateral brachial artery to the brachial artery on the affected side is described. (orig.)

2007-10-01

110

Total prosthetic replacement of atrioventricular valves in the dog  

UK PubMed Central (United Kingdom)

The metal parts of cardiac valve prostheses cause reactions in the surrounding tissues of the heart. In some dogs rather abnormal reactions were found, and were attributed to corrosion of the stainless...Full Text Available

1972-01-01

111

Selecting the right pumps and valves for flue gas desulfurization  

Science.gov (United States)

Limestone slurry needs to move efficiently through a complex process, meaning that selecting the right pumps and valves is critical. The article discusses factors to consider in selecting pumps and values for flue gas desulfurization process in coal-fired power plants. 2 photos.

2006-07-15

112

Percutaneous mitral valve repair: the beginning of the end or the end of the beginning?  

UK PubMed Central (United Kingdom)

The new percutaneous mitral valve repair techniques are at an early stage. Preliminary series show that they are feasible; however, they need to be further evaluated in comparison with contemporary...Full Text Available

113

Latent Tricuspid Valve Rupture after Motor Vehicle Accident and Routine Echocardiography in All Chest-Wall Traumas  

UK PubMed Central (United Kingdom)

Blunt chest-wall trauma is common; however, resultant tricuspid valve rupture is rare and can be subtle in its presentation. Transthoracic echocardiography plays a key role in diagnosis.Herein,...Full Text Available

2009-01-01

114

Cavitation guide for control valves  

Energy Technology Data Exchange (ETDEWEB)

This guide teaches the basic fundamentals of cavitation to provide the reader with an understanding of what causes cavitation, when it occurs, and the potential problems cavitation can cause to a valve and piping system. The document provides guidelines for understanding how to reduce the cavitation and/or select control valves for a cavitating system. The guide provides a method for predicting the cavitation intensity of control valves, and how the effect of cavitation on a system will vary with valve type, valve function, valve size, operating pressure, duration of operation and details of the piping installation. The guide defines six cavitation limits identifying cavitation intensities ranging from inception to the maximum intensity possible. The intensity of the cavitation at each limit Is described, including a brief discussion of how each level of ...

1993-04-01

115

Transluminal radio-frequency thermal ablation using a stent-type electrode: an experimental study  

Energy Technology Data Exchange (ETDEWEB)

To assess the feasibility of transluminal radiofrequency thermal ablation using a stent-type electrode and to determine, by means of in-vivo and in-vivo animal studies, the appropriate parameters. In-vivo: the radiofrequency electrode used was a self-expandable nitinol stent with 1cm insulated ends. A stent was placed in the portal vein of bovine liver, and ablations at target temperatures of 70, 80, 90, and 100 .deg. C were performed. Ablated sizes were measured longitudinally. In vivo: four mongrel dogs were anesthetized, and a stent was inserted in the common bile duct under fluoroscopic guidance through an ultrasound-guided gall bladder puncture site. The ablation temperature was set at 80 .deg. C, and each dog underwent proximal and distal esophageal ablations lasting 12 minutes. They were sacrificed immediately. In-vivo: ablated sizes showed significant correlation with target temperatures ...

2003-06-01

116

TWENTE Study: The Real-World Endeavor Resolute Versus Xience V Drug-Eluting Stent Study in Twente: study design, rationale and objectives  

UK PubMed Central (United Kingdom)

Background. New-generation drug-eluting stents (DES) may solve several problems encountered with first-generation DES, but there is a lack of prospective head-to-head comparisons between...Full Text Available

2010-08-01

117

Initial and mid-term results of a 4F compatible self-expanding low strut profile nitinol stent in the superficial femoral artery  

Energy Technology Data Exchange (ETDEWEB)

Purpose: To evaluate the initial and mid-term results of a new self-expanding low strut profile nitinol stent for treatment of atherosclerotic lesions stenoses and occlusions in the superficial femoral artery (SFA). Materials and Methods: In 8 patients (4 male, 4 female, mean age 74.8 {+-} 8.8 years) with SFA lesions and non-satisfying results after PTA treatment alone, 10 self-expanding nitinol Xpert stents were deployed via a 4 F sheath. Stent characteristics and handling were graded by the interventionalist. Fontaine classification, duplex flow measurements and ankle brachial index (ABI) at rest and stress were taken prior and one day after stent placement. Patients were followed 3, 6 and 12 months after the procedure obtaining the same parameters at each appointment. Results: Initial stent treatment was successful in all patients. Stent handling and ...

2007-07-15

118

Infrarenal abdominal aortic aneurysm. Endovascular repair with stent grafts; Infrarenales Bauchaortenaneurysma. Endovaskulaere Stent-Graft-Therapie  

Energy Technology Data Exchange (ETDEWEB)

As an alternative to surgery, endovascular therapy with stent grafts has become the second main treatment option for infrarenal abdominal aortic aneurysms. Unlike surgery, endovascular treatment with stent grafts is also applicable in patients unfit for open repair. Despite current improvements in endovascular repair devices, significant anatomic barriers still exclude this technique for a large number of patients. Computed tomography, magnetic resonance imaging, and ultrasound are essential for diagnostics, preintervention planning, and postintervention follow-up of abdominal aneurysms treated with stent grafts. This review covers etiology, pathology, and diagnostic aspects. Materials and methods for endovascular treatment of abdominal aortic aneurysms are presented in detail, and clinical results and complications are discussed. (orig.) [German] Die endovaskulaere Therapie des infrarenalen Bauchaortenaneurysmas hat sich ...

2008-09-15

119

Does Sex Matter? Thirty-Day Stroke and Death Rates Following Carotid Artery Stenting in Women vs. Men: Results from the Carotid Revascularization Endarterectomy vs. Stenting Trial (CREST) Lead-in Phase  

UK PubMed Central (United Kingdom)

BACKGROUNDSeveral carotid endarterectomy (CEA) randomized controlled trials (RCTs) and series have reported higher perioperative stroke and death rates for women...Full Text Available

2009-04-01

120

Gunsof - NASA  

Science.gov (United States)

end of the barrel. The petal valve and ring seal are inserted behind it, and the gun barrel assembly and HP section are clamped together with hydraulic collars. ...

121

Evaluation of the fluid force in main feed water control valve for APWRs  

International Nuclear Information System (INIS)

... 2432 v. 43(1) SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS

2006-01-01

122

Active Shimmy Control System  

Science.gov (United States)

... Both effects are undoubtedly caused by the ahaping of the spool valve flow characteristics The linear region of response corresponds to ...

1975-12-01

123

On the Improved Plasma Confinement in Toroidal Systems. Measuring of the Plasma Density Inhomogeneities Near the Gas Valve  

International Nuclear Information System (INIS)

Comparison of plasma density increase was carried out in outer and inner channels of the interferometer in T-11M tokamak. There were two cases of gas puffing: by outer valve or upper one. Amplitude of difference of the plasma density increase consisted of 9% near the outer valve. Perturbation of the electric potential e?1/Te can have similar value. This perturbation can lead to appearance of the additional losses.

2006-01-01

124

Effects on fatigue life of gate valves due to higher torque switch settings during operability testing  

Energy Technology Data Exchange (ETDEWEB)

Some motor operated valves now have higher torque switch settings due to regulatory requirements to ensure valve operability with appropriate margins at design basis conditions. Verifying operability with these settings imposes higher stem loads during periodic inservice testing. These higher test loads increase stresses in the various valve internal parts which may in turn increase the fatigue usage factors. This increased fatigue is judged to be a concern primarily in the valve disks, seats, yokes, stems, and stem nuts. Although the motor operators may also have significantly increased loading, they are being evaluated by the manufacturers and are beyond the scope of this study. Two gate valves representative of both relatively weak and strong valves commonly used in commercial nuclear applications were selected for fatigue analyses. Detailed dimensional and ...

1995-12-01

125

Dynamic performance testing of control valves  

International Nuclear Information System (INIS)

Response of control valves plays an important role in the dynamics of the flow system as a whole. Knowledge of its transfer function would facilitate analysis of the behaviour of the system. This paper presents the application of Levy's complex curve fitting method for determination of the transfer function of control valves used in Liquid Zone Control System of 540 MWe PHWR. (author)

2005-02-01

126

A thermal valve heat flux control device  

International Nuclear Information System (INIS)

In order to evacuate the residual power in a nuclear reactor, a thermal valve system is presented for the modification of the heat exchange conditions at the pool exchanger level, which avoids the use of mechanical valves on the pipes. The system involves a vessel containing the exchanger, with openings at the upper end of the vessel and means for feeding the fluid at the lower end, and means for controlling the opening width.

1994-10-05

127

In vitro examination of the visibility of 11 stent catheters with real-time MR imaging; In-vitro-Untersuchung der Sichtbarkeit von 11 Stentkathetern unter Echtzeit-MR-Kontrolle  

Energy Technology Data Exchange (ETDEWEB)

Purpose: To evaluated artifacts of unexpended stents and to determine their exact position for MR-guided percutaneous transluminal angioplasty using real-time sequences. Materials and Methods: By using an in vitro model, 11 unexpended stents - 9 nitinol, 1 stainless steel, and 1 cobalt alloy - were investigated by MR. Each stent was studied in a vessel-phantom filled with saline solution. Imaging was performed using five different realtime sequences: fast low angle shot (Flash 2D), fast imaging with steady precession (true FISP, FISP, interactive true FISP) and segmented echo planar imaging (seg. EPI). Artifacts of the introducer system and the stent were calculated by four blinded radiologists (scale: 1 - artifacts, making an excellent contribution to visualization; 2 - artifacts, making mainly a contribution to visualization; 3 - artifacts, making no contribution to visualization). Furthermore, an ...

2004-09-01

128

Linearization of Valve Flow Characteristics for Steam Turbine Control  

Energy Technology Data Exchange (ETDEWEB)

The control valve for a large steam turbine must be operated linearly to be run by an automatic control system in a power plant. It is, however, found that the flow increase is much greater for a given valve position change near the closed end of travel than it is near the open end. Accordingly, the desired linearization will be achieved if the valve is opened less near the closed end of travel and greater near the open end. The previous way for linearization was to utilize the cams, which is called the mechanical hydraulic control (MHC). The MHC was afterward improved by producing the nonlinear electric compensation to the nonlinear system of control valves, viz. the electro hydraulic control (EHC). This paper addresses the principle of linearization.

2009-05-15

129

Linearization of Valve Flow Characteristics for Steam Turbine Control  

International Nuclear Information System (INIS)

The control valve for a large steam turbine must be operated linearly to be run by an automatic control system in a power plant. It is, however, found that the flow increase is much greater for a given valve position change near the closed end of travel than it is near the open end. Accordingly, the desired linearization will be achieved if the valve is opened less near the closed end of travel and greater near the open end. The previous way for linearization was to utilize the cams, which is called the mechanical hydraulic control (MHC). The MHC was afterward improved by producing the nonlinear electric compensation to the nonlinear system of control valves, viz. the electro hydraulic control (EHC). This paper addresses the principle of linearization.

2009-05-01

130

Dynamic modelling of check valves in shipping terminals; Modelagem dinamica de valvulas de retencao em terminais maritimos  

Energy Technology Data Exchange (ETDEWEB)

As usual a shipping terminal contains a header and its diameter is smaller than the main pipeline diameter. This diameter reduction amplifies the effects caused by hydraulic transients. It was noticed during simulations that check valves without dynamic modeling may introduce some error in the maximum pressure results without a dynamic model approach. The current paper uses commercial pipeline simulation software to model the dynamic behavior of the check valves. It was studied the header diameter influence and how the check valve model type may change the maximum pressure in the pipeline. It was proved that even a pipeline that works with low pressure and small elevation drop needs a detailed valve modeling to prevent the calculation of unreal pressure values in the region with diameter reduction. (author)

2005-07-01

131

Osseointegration of zirconia implants: an SEM observation of the bone-implant interface  

UK PubMed Central (United Kingdom)

BackgroundThe successful use of zirconia ceramics in orthopedic surgery led to a demand for dental zirconium-based implant systems. Because of its excellent biomechanical characteristics,...Full Text Available

132

Optical and Structural Characteristics of Heavily Boron-Implanted CdTe.  

Science.gov (United States)

Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implante...

1988-01-01

133

Music perception in cochlear implant users and its relationship with psychophysical capabilities  

UK PubMed Central (United Kingdom)

This article describes issues concerning music perception with cochlear implants, discusses why music perception is usually poor in cochlear implant users, reviews relevant data, and describes...Full Text Available

2008-01-01

134

Complications of NewColorIris implantation in phakic eyes: a review  

UK PubMed Central (United Kingdom)

Purpose:To provide a literature review of implant related complications from bilateral NewColorIris implantation (Kahn Medical Devices, Panama City, Panama).Methods:A...Full Text Available

2011-01-01

135

Experimental parametric equation for the prediction of valve coefficient (C_v) for choke valve trims  

International Nuclear Information System (INIS)

The calculation of nominal choke valve size determines the effective capacity for an oil and gas production system. The degree of restriction for the controlling area in the valve is a function of the surrounding geometry. In an orifice plate this is known as the 'velocity of approach' and can be used to determine the meter coefficient (C_m). This paper presents a technique for choke valves, based on the meter velocity of approach parameter, which can be used to predict the Valve Coefficient (C_v) for new trim designs. The prediction method uses a data trend based on a number of flow tests conducted on various trim characteristics. The resultant parametric equation is used to predict the C_v of a new trim geometry. The method relies on experimental data determined per IEC 60534-2-3, with calculations per IEC 60534-2-1. This paper further investigates the effect of varying upstream geometry on C_v for a ...

136

Treatment of intracranial atherosclerotic stenoses with balloon dilatation and self-expanding stent deployment (WingSpan)  

International Nuclear Information System (INIS)

The endovascular treatment of atherosclerotic intracranial arterial stenoses has previously been based on balloon dilatation or the deployment of a balloon expandable stent. Both methods have advantages (balloon: flexibility; balloon expandable stent: high radial force) and drawbacks (balloon: risk of elastic recoil and dissection; balloon expandable stent: limited flexibility, risk of injury to the vessel due to excessive straightening, overexpansion at ends of stent). A new combination of balloon dilatation, followed by the deployment of a self-expanding microstent has been applied in 15 patients with atherosclerotic arterial stenoses, symptomatic despite medical treatment. An anatomically and clinically adequate result was achieved in all patients. The initial degree of stenosis was 72% (mean). Balloon dilatation resulted in an average residual stenosis of 54% (mean), reduced further to a mean of 38% ...

2005-03-01

137

Osseointegration of zirconia implants compared with titanium: an in vivo study  

UK PubMed Central (United Kingdom)

BackgroundTitanium and titanium alloys are widely used for fabrication of dental implants. Since the material composition and the surface topography of a biomaterial play a fundamental...Full Text Available

138

Neural Tissues from the Implanted Stem Cells  

International Science & Technology Center (ISTC)

Morphological, Electrophysiological and Behavioral Investigations of the Nervous Tissue Developed from the Embryonic Matrix Zone Cells of the Dorsolateral Walls of Lateral Ventricles, Implanted into the Lesioned Regions of the Adult Rat's Brain

139

Behavior of osteoblastic cells cultured on titanium and structured zirconia surfaces  

UK PubMed Central (United Kingdom)

BackgroundOsseointegration is crucial for the long-term success of dental implants and depends on the tissue reaction at the tissue-implant interface. Mechanical properties and biocompatibility...Full Text Available

140

Aphakic macular oedema following prosthetic lens implantation.  

UK PubMed Central (United Kingdom)

Fluorescein angiography of the iris was performed on patients with plastic lens implants with cystoid oedema of the macula, and the nature of the vascular changes was compared with controls provided...Full Text Available

1977-05-01

141

The interventional treatment for biliary recurrent obstruction after palliative T tube drainage in patients with obstruction due to cholangiocarcinoma  

International Nuclear Information System (INIS)

Objective: To explore the interventional method to treat biliary recurrent jaundice after T tube drainage in patients with malignant obstructive jaundice due to cholangiocarcinoma. Methods: 7 biliary metallic stents were placed in 7 patients with recurrent jaundice after T-tube drainage in cholangiocarcinoma cases. Results: Stent placement was once successful in all 7 cases with successful rate of 100%. For all cases, TBIL, ALT, GTP and AKP values 7 days postoperatively were significantly lower than that of preoperation together with subsidence of jaundice satisfactorily for 100% after the treatment. Conclusions: Percutaneous placement of biliary metallic stents was effective economic, minimal invasive and safe for palliation of biliary recurrent jaundice after T tube drainage in cholangiocarcinoma-induced obstructive jaundice

2002-10-01

142

Stent placement under real-time MR control: first experience in an animal model; Stentplazierung unter Echtzeit-MR-Kontrolle: erste tierexperimentalle Erfahrungen  

Energy Technology Data Exchange (ETDEWEB)

Purpose: The aim of this study was to test the feasibility of iliac artery stent placement under MR guidance with real-time MR radial scanning in an animal model. Materials and methods: The experiments were performed on three pigs in a 1.5 T scanner. Radial scanning with a gradient echo technique (T{sub R} 8.4 ms, T{sub E} 3.6 ms, flip angle 10 ) was used. A dedicated backprojector performed the reconstruction of the raw data in real-time. The resulting MR-images were displayed on LCD screens beside the magnet. The sliding window reconstruction technique allowed image acquistion at a frame rate of 16 images per second. MR-compatible self-expanding stents with a diameter of 8 mm and a length of 3 cm were placed into the left iliac artery. Their positions were verified by digital subtraction angiography (DSA) and compared to MRI. Results: All stents were successfully placed. Stent positions as monitored ...

1998-12-01

143

Endoscopic snare papillectomy with biliary and pancreatic stent placement for tumors of the major duodenal papilla  

British Library Electronic Table of Contents (United Kingdom)

Background This study aimed to evaluate the feasibility, safety, and follow-up results of endoscopic papilletomy (ESP) with pancreatic and biliary duct stent placement for ampullary tumors. The therapeutic approach to benign ampullary tumors remains unsettled. The ESP procedure is a curative treatment option for benign papillary tumors, but ESP raises concerns about a relatively high risk for procedure-related complications such as pancreatitis. A pancreatic stent may protect against complications. Methods Between September 2000 and June 2008, 36 patients with ampullary tumors confined to the mucosa and no intraductal tumor growth underwent ESP. The preprocedural diagnostic tools included endoscopic ultrasound, transpapillary intraductal ultrasound, and endoscopic retrograde cholangiopancr...

2010-01-01

144

The Use of Self-Expanding Plastic Stents in the Management of Oesophageal Leaks and Spontaneous Oesophageal Perforations  

UK PubMed Central (United Kingdom)

Leakage after oesophageal anastomosis or perforation remains a challenge for the surgeon. Traditional management has been operative repair or intensive conservative management. Both treatments are...Full Text Available

2011-01-01

145

Selective endothelin A-receptor blockade attenuates coronary microvascular dysfunction after coronary stenting in patients with type 2 diabetes  

UK PubMed Central (United Kingdom)

Background:Endothelin-1 may be involved in the development of diabetic microangiopathy. We studied the effect of endothelin-1 blockade on myocardial microcirculation during coronary...Full Text Available

2009-01-01

146

Quality of life in patients with esophageal stenting for the palliation of malignant dysphagia  

UK PubMed Central (United Kingdom)

Incidence of esophageal cancer (EC) is rising more rapidly in the Western world than that of any other cancer. Despite advances in therapy, more than 50% of patients have incurable disease at the time...Full Text Available

2011-01-14

147

Percutaneous Management of a Long Saphenous Vein Graft Aneurysm: A Case Report and Review of Literature  

UK PubMed Central (United Kingdom)

Aneurysms of saphenous vein grafts are rare but can result in complications such as myocardial infarction or death. Percutaneous treatment has included a variety of approaches, including covered stents....Full Text Available

2009-01-01

148

Over-the-scope clip closure of two chronic fistulas after gastric band penetration  

UK PubMed Central (United Kingdom)

Gastrointestinal perforations are conservatively managed at endoscopy by through-the-scope endoclips and covered self expandable stents, according to the size and tissue features of the perforation....Full Text Available

2010-04-07

149

Obstructive Jaundice after Bilioenteric Anastomosis: Transhepatic and Direct Percutaneous Enteral Stent Insertion for Afferent Loop Occlusion  

UK PubMed Central (United Kingdom)

Recurrent tumour after radical pancreaticoduodenectomy may cause obstruction of the small bowel loop draining the liver. Roux-loop obstruction presents a particular therapeutic challenge, since the...Full Text Available

2010-09-01

150

Metal stenting to resolve post-photodynamic therapy stricture in early esophageal cancer  

UK PubMed Central (United Kingdom)

Photodynamic therapy (PDT) is an established endoscopic technique for ablating Barrett’s esophagus with high-grade dysplasia or early-stage intraepithelial neoplasia. The most common clinically...Full Text Available

2011-03-14

151

Lower extremity vascular stenting for a post-traumatic pseudoaneurysm in a young trauma patient  

UK PubMed Central (United Kingdom)

Endovascular treatment of post-traumatic pseudoaneurysms has become a viable, less invasive option when compared to open repair. Due to the relative youth of this technology, studies have yet to be...Full Text Available

2011-04-01

152

Interventional management of tracheobronchial strictures  

UK PubMed Central (United Kingdom)

Tracheobronchial balloon dilation and stent placement have been well used in the treatment of patients with benign and/or malignant diseases. Balloon dilation is the first option in the treatment of...Full Text Available

2010-08-28

153

Endovascular treatment of a Superior Mesenteric Artery Syndrome variant secondary to traumatic pseudoaneurysm  

UK PubMed Central (United Kingdom)

Pseudoaneurysms related to the superior mesenteric artery (SMA) are a recognised complication of trauma to the vessel, and successful treatment with stenting has been previously described. We report...Full Text Available

154

Endovascular surgery for peripheral arterial occlusive disease. A critical review.  

UK PubMed Central (United Kingdom)

Endovascular surgery is a new multidisciplinary field that applies the recently innovated techniques of angioscopy, intraluminal ultrasound, balloon angioplasty, laser, mechanical atherectomy, and stents....Full Text Available

1992-07-01

155

Endovascular covered stenting for the management of post-percutaneous nephrolithotomy renal pseudoaneurysm: a case report  

UK PubMed Central (United Kingdom)

IntroductionIntrarenal pseudoaneurysm is a rare, yet clinically significant, complication of percutaneous nephrolithotomy. A high index of clinical suspicion is necessary in order...Full Text Available

156

Endobronchial Stent Insertion to Manage Hemoptysis caused by Lung Cancer  

UK PubMed Central (United Kingdom)

Hemoptysis in patients with lung cancer is not uncommon and sometimes have dangerous consequences. Hemoptysis has been managed with various treatment options other than surgery and medicine, such as...Full Text Available

2010-08-01

157

Early Experience in the Treatment of Intra-Cranial Aneurysms by Endovascular Flow Diversion: A Multicentre Prospective Study  

UK PubMed Central (United Kingdom)

IntroductionFlow diversion is a new approach to the endovascular treatment of intracranial aneurysms which uses a high density mesh stent to induce sac thrombosis. These devices...Full Text Available

158

Coronary artery overexpansion increases neointimal hyperplasia after stent placement in a porcine model  

UK PubMed Central (United Kingdom)

ObjectiveTo determine if an aggressive approach to coronary revascularisation with oversized balloons is counterproductive, we studied the effect of increasing balloon‐to‐artery...Full Text Available

2007-12-01

159

Carotid Stenting vs Endarterectomy: New Results in Perspective  

UK PubMed Central (United Kingdom)

Carotid artery stenosis is a major risk factor for stroke, and treatments for this condition to decrease the risk of stroke include medical therapy, carotid endarterectomy (CEA), and, more recently,...Full Text Available

2010-12-01

161

Pitting corrosion resistance of silicon-implanted stainless steels  

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

162

Multi-functional Biocompatible Coatings  

International Science & Technology Center (ISTC)

Multi-functional Bioactive Nano-structured Coatings for Load-Bearing Implants

163

Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon  

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

168

Evidence-Based Drainage of Infected Hydronephrosis Secondary to Ureteric Calculi  

British Library Electronic Table of Contents (United Kingdom)

Abstract Introduction: The obstructed, infected kidney is a urological emergency. It has been accepted that the management of infected hydronephrosis secondary to ureteric stones is through prompt decompression of the collecting system. However, the optimal method of decompression has yet to be established. Materials and Methods: A PubMed and Medline search was performed of all English-language articles from 1960 using key words ?sepsis,?? ?urosepsis,?? ?obstruction,?? ?obstructive pyelonephritis,?? ?pyonephrosis,?? ?infection and hydronephrosis?? ?decompression,?? ?stent,?? ?nephrostomy,?? and ?management.?? The Cochrane database and National Institute for Clinical Effectiveness guidelines were searched using the terms ?sepsis,?? ?urosepsis,?? ?stent,?? ?nephrostomy,?? or ?obstruction.?? ...

2010-01-01

169

Retrospective analysis of porcelain failures of metal ceramic crowns and fixed partial dentures supported by 729 implants in 152 patients: Patient-specific and implant-specific predictors of ceramic failure  

British Library Electronic Table of Contents (United Kingdom)

Statement of problem Porcelain fracture associated with an implant-supported, metal ceramic crown or fixed partial denture occurs at a higher rate than in tooth-supported restorations, according to the literature. Implant-specific and patient-specific causes of ceramic failure have not been fully evaluated. Purpose The purpose of this retrospective study was to evaluate the potential statistical predictors for porcelain fracture of implant-supported, metal ceramic restorations. Material and Methods Over a 6-month period, a consecutive series of patients having previously received implant-supported, metal ceramic fixed restorations were examined during periodic recall appointments. The number of supporting implants, number of dental units, type of restoration, date of prosthesis insertion, ...

2009-01-01

170

Electrical properties of focused-ion-beam boron-implanted silicon  

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

171

Effect of Al and Be ions pre-implantation on formation and growth of helium bubbles in SiC/SiC composites  

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted ...

2007-03-15

172

Effect of Al and Be ions pre-implantation on formation and growth of helium bubbles in SiC/SiC composites  

International Nuclear Information System (INIS)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si"2"+, 1.0-MeV He"+ and 340-keV H"+) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. ...

2007-03-01

173

Endovenous radiofrequency ablation using stent-type electrode for varicose veins: an experimental study in goats  

Energy Technology Data Exchange (ETDEWEB)

The purpose of this study was to investigate the feasibility and the optimal conditions of radiofrequency (RF) ablation by using the stent-type electrode upon the saphenous vein of goats for the endovenous treatment of varicose veins. A self-expandable nitinol stent electrode (6 mm diameter, 2 cm length, cell size; 1.3 x 2 mm) was designed to expose the distal 1 cm segment to allow for contact with the venous wall. The proximal part of the electrode was connected to the RF generator by insulated copper wires located within the stent electrode introducer. Initially, to optimize the power setting, ablation of 6 saphenous veins in 3 goats was performed with power settings of 10, 20 and 30 W. Pull back rate of the electrode was 2 and 4 cm/min for each power level, respectively. The goats were sacrificed 4-6 weeks later and histologic examinations of the saphenous veins were done. For the second part of the experiment, RF ...

2004-10-15

174

Endovascular treatment of intrahepatic inferior vena cava obstruction from malignant hepatocellular tumor thrombus utilizing Luminexx self-expanding nitinol stents  

Energy Technology Data Exchange (ETDEWEB)

Inferior vena cava (IVC) obstruction is a well-described clinical entity. Most IVC obstructions from malignant neoplasms are a direct result of tumor compression [Oviedo J, Cerda S. Vascular invasion by hepatocellular carcinoma. Arch Pathol Lab Med 2001;125: 454-5; Furui S, Sawada S, et al. Gianturco stent placement in malignant caval obstruction: analysis of factors for predicting the outcome. Radiology 1995;195:147-52; Fletcher WS, Lakin PC, et al. Results of treatment of inferior vena cava syndrome with expandable metallic stents. Arch Surg 1998;133:935-8]. The symptoms of IVC obstruction include progressive ascites, scrotal edema and lower body edema. These constellations of symptoms are described as IVC syndrome and are devastating to a patient with end-stage cancer. We describe a palliative therapy utilizing Luminexx nitinol self-expanding stents to treat intracaval hepatoma thrombus obstructing the IVC. The procedure ...

2008-05-15

175

A new self-expanding nitinol stent (Enterprise) for the treatment of wide-necked intracranial aneurysms: initial clinical and angiographic results in 31 aneurysms  

Energy Technology Data Exchange (ETDEWEB)

We report the results of a prospective clinical study using a new self-expanding nitinol stent (Enterprise) designed for the treatment of wide-necked intracranial aneurysms. We treated 31 saccular, wide-necked intracranial aneurysms in 30 patients. Ten aneurysms had recanalized after prior endovascular treatment without a stent, and 21 aneurysms had not been treated before. Stent deployment was successful in all procedures. Additional coil embolization was performed in all aneurysms. Initial complete angiographic occlusion was achieved in 6 aneurysms, a neck remnant was left in 18 aneurysms and there were 7 residual aneurysms. Angiographic follow-up examinations of 30 lesions after 6 months demonstrated 15 complete occlusions, 8 neck remnants and 7 residual aneurysms. One patient refused the 6-month angiographic follow-up. Spontaneous occlusion of the aneurysm had occurred in 14 patients, and 6 aneurysms showed ...

2007-07-15

176

Development of new three way valve using vacuum for liquid transfer  

International Nuclear Information System (INIS)

The nitric acid solution dissolving nuclear fuel material is transferred with the three way valve called VCV (VCV: vide-casse-vide in Fr.) using vacuum in the Tokai Reprocessing Plant. The initial VCV was not reliable because it had broken with in 1 or 2 years. The cause of failure was damage of the plastic diaphragms in the moving parts. Then, the new VCV valve with stainless-steel bellows was developed. There is no failure in moving parts in 20 years, therefore reliability is significantly improved. (author)

2008-07-01

177

High current implantation of negative copper ions into silica glasses  

Energy Technology Data Exchange (ETDEWEB)

High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.

1997-12-01

178

Training aids: the motor operator valve trainer  

International Nuclear Information System (INIS)

The spectrum of training aids used in the nuclear industry runs the gamut from the very basic (i.e., valve training aids - gate, globe, check) to the highly complex (i.e., nuclear full scope simulator). Designing and purchasing the best training aids take much time, detailed investigation, and good understanding of plant operations. The training aid that has given the New York Power Authority the best results has been the motor operator valve (MOV) trainer. Some of the items that make the MOV trainer a good choice are: (1) large number of MOVs in the plant, (2) importance of MOVs to safe plant operation, (3) detailed MOV procedures used by the plant, (4) history of MOV problems, and (5) ability to demonstrate important concepts and operation - hammer blow effect, torque and limit switch adjustment and functions, and actual sequence of operation of the limitorque valve operator.

1987-06-07

179

The National Shipbuilding Research Program Task S-20: A ...  

Science.gov (United States)

... The other standards in this group deal with heat exchangers, insulation, marking, valves, hydraulic cleanliness, storage of LPG, and centrifugal fire ...

1979-05-01

180

Flow mapping for assessment of native and repaired valves  

International Nuclear Information System (INIS)

Color Doppler flow mapping (CDFM) was performed in 47 normal women ages 18-41 mean (m) 28 to determine the normal flow phenomena across each of the 4 heart valves. The group included: 15 elite marathon runners average run (ave.) 70 miles/week, heart rate (HR) 35-54 (m 45); 14 joggers ave. 40 mi/wkm HR 40-69 (m 53); and 17 controls 0 mi/wk, HR 49-93 (m 77). 2-D echo and CDFM defined the motion of each valve, including the presence of mitral valve prolapse (MVP), the ventricular inflow and outflow patterns and the presence of regurgitation.

181

Flow characteristics and dynamics of swing check valves in compressible flow applications (Part-1)  

Energy Technology Data Exchange (ETDEWEB)

In the design of natural gas compressor stations, a check valve is a critical element which is commonly placed on the discharge side of the compressor to prevent reverse flow that can cause serious damage to the compressor itself and other components such as seals and bearings. One of the selection criteria of the check valve for this particular application is the valve flow characteristics in steady flow, and its dynamic characteristics in unsteady flow operation. With regards to steady flow valve characteristics, current models for the determination of the check valve open angle vs. mean flow velocity are based on semi-empirical data obtained from water tests, which were found to deviate from measurements in compressible flows. This paper presents results of steady compressible flow testing of an NPS 4 swing type check valve in air. Mean flow velocities vs. ...

1996-12-01

182

Effects of compressibility on flow characteristics and dynamics of swing check valves. Part 1  

Energy Technology Data Exchange (ETDEWEB)

In the design of natural gas compressor stations, a check valve is a critical element which is commonly placed on the discharge side of the compressor to prevent reverse flow that can cause serious damage to the compressor itself and other components such as seals and bearings. One of the selection criteria of the check valve for this particular application is the valve flow characteristics in steady flow, and its dynamic characteristics in unsteady flow operation. With regards to steady flow valve characteristics, current models for the determination of the check valve open angle versus mean flow velocity are based on semi-empirical data obtained from water tests, which were found to deviate from measurements involving fluids of relatively higher compressibility. This paper presents results of steady flow testing of an NPS 4 swing-type check valve in air. Mean ...

1997-05-01

183

Control rod drives  

International Nuclear Information System (INIS)

Purpose: To secure the reactor operation safety by the provision of a fluid pressure detecting section for control rod driving fluid and a control rod interlock at the midway of the flow pass for supplying driving fluid to the control rod drives. Constitution: Between a driving line and a direction control valve are provided a pressure detecting portion, an alarm generating device, and a control rod inhibition interlock. The driving fluid from a driving fluid source is discharged by way of a pump and a manual valve into the reactor in which the control rods and reactor fuels are contained. In addition, when the direction control valve is switched and the control rods are inserted and extracted by the control rod drives, the pressure in the driving line is always detected by the pressure detection section, whereby if abnormal pressure is resulted, the alarm generating device is actuated to warn the abnormality and the ...

184

An analysis and evaluation of differential pressure calculation of motor operated valve using system flow model  

Energy Technology Data Exchange (ETDEWEB)

As part of the EPRI Motor-Operated Valve (MOV) Performance Prediction Methodology, a System Flow Model (SFM) has been developed to determine the differential pressure (DP) across MOVs as they are stroked in typical power plant systems. Input to the SFM includes valve flow characteristics (such as flow coefficient) and system characteristics (such as pump head/flow curve). The primary output is differential pressure across the valve at each stroke position. The SFM was validated by comparison with test data from the EPRI Flow Loop Test Program. In this study, we calculated DP using SFM and performed DP test for four MOVs. Compared between calculated DP and test DP of four MOV, respectively good agreements are found. (author). 6 refs., 9 figs., 1 tab.

1999-11-01

186

3 - NASA Technical Reports Server  

Science.gov (United States)

Mar 1, 2011... properties to a complex model demanding full combustion kinetics, transport properties, and poppet valve flow characteristics. ...

187

XPS study of passive films formed on molybdenum-implanted austenitic stainless steels  

Energy Technology Data Exchange (ETDEWEB)

Austenitic stainless steels have been implanted with molybdenum ions (Mo[sup +], 100 keV, 2.5 x 10[sup 16] atoms cm[sup -2]). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of [approx] 1000 A with a maximum molybdenum concentration of [approx] 9 at.% Mo located at [approx] 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H[sub 2]SO[sub 4] have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted ...

1992-06-01

188

XPS study of passive films formed on molybdenum-implanted austenitic stainless steels  

International Nuclear Information System (INIS)

Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and ...

1991-10-01

189

Corrosion behaviour of molybdenum-implanted stainless steel  

Energy Technology Data Exchange (ETDEWEB)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

1990-01-01

190

Corrosion behaviour of molybdenum-implanted stainless steel  

International Nuclear Information System (INIS)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

1989-09-01

191

The characteristics of surface oxidation and corrosion resistance of nitrogen implanted zircaloy-4  

International Nuclear Information System (INIS)

This work is concerned with the development and application of ion implantation techniques for improving the corrosion resistance of zircaloy-4. The corrosion resistance in nitrogen implanted zircaloy-4 under a 120 keV nitrogen ion beam at an ion dose of 3 x 10"1"7 cm"-"2 depends on the implantation temperature. The characteristics of surface oxidation and corrosion resistance were analyzed with the change of implantation temperature. It is shown that as implantation temperature rises from 100 to 724 C, the colour of specimen surface changes from its original colour to light yellow at 100 C, golden at 175 C, pink at 300 C, blue at 440 C and dark blue at 550 C. As the implantation temperature goes above 640 C, the colour of surface changes to light black, and the surface becomes a little rough. The corrosion resistance of zircaloy-4 implanted ...

192

Percutaneous transhepatic biliary drainage for hilar cholangiocarcinoma  

International Nuclear Information System (INIS)

Objective: To evaluate the effect of PTBD in treating malignant biliary obstruction caused by hilar cholangiocarcinoma. Methods: We retrospectively analyzed the data of 103 patients(M:62,F:41)with malignant obstructive jaundice caused by hilar cholangiocarcinoma. After taking percutaneous transhepatic cholangiography, metallic stent or plastic external catheter or external-internal catheter for drainage was deployed and then followed up was undertaken with clinical and radiographic evaluation and laboratory. examination. Results: All patients went though PTBD successfully (100%). According to Bismuth classification, all 103 cases consisted of I type(N=30), II type (N=30), III type (N=26) and IV type (N=17). Thirty-nine cases were placed with 47 stents and 64 eases with drainage tubes. 4 cases installed two stems for bilateral drainage, 2 cases installed two stents because of long segmental strictures with ...

2007-10-01

193

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator  

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

194

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator  

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

2004-12-15

195

Diffusion modeling of ion implanted boron in Si during RTA: Correlation of extended defect formation and annealing with the enhanced diffusion of boron  

International Nuclear Information System (INIS)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...

196

A study on yellow luminescence in O and C ion implanted GaN  

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

2008-08-01

197

Use of endobronchial one-way valves reveals questions on etiology of spontaneous pneumothorax: report of three cases  

UK PubMed Central (United Kingdom)

Spontaneous pneumothoraces are believed to arise when air from the supplying airway exit via a ruptured visceral pleural bleb into the pleural cavity. Endobronchial one-way valves (EBVs) allow air exit...Full Text Available

198

Studies of neural networks for engine control: application to the electromechanical valves engine; Etudes des reseaux de neurones pour le controle moteur: application a soupapes electromecaniques  

Energy Technology Data Exchange (ETDEWEB)

This paper deals with the control of an electromechanical valves engine. The control uses neural networks in order to build a non-linear model of engine filing which depends on the driven inlets. The aim is to build this real-time model and to integrate this model to a control system which performs an iterative inversion. (J.S.)

1997-12-31

199

Multilayer structures with giant magnetoresistance  

International Nuclear Information System (INIS)

The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)

2001-09-23

200

Hydraulic device for control rod drive mechanisms  

International Nuclear Information System (INIS)

Purpose: To improve the reliability of control rod drive mechanisms for use in BWR type reactors by preventing erroneous insertion of control rods caused by the increase in the coolant pressure. Constitution: A pressure-releaf valve mechanism is provided which opens its valve when a detected difference between the pressure of the coolants flowing through coolant pipeways and the reactor pressure exceeds a predetermined pressure difference. If the coolant pressure increases abnormally, coolants in the coolant pipeway are released to lower the pressure. (Aizawa, K.).

1981-07-31

201

Assessing aortic valve area in aortic stenosis by continuity equation: a novel approach using real-time three-dimensional echocardiography  

UK PubMed Central (United Kingdom)

AimsTwo-dimensional echocardiographic (2DE) continuity-equation derived aortic valve area (AVA) in aortic stenosis (AS) relies on non-simultaneous measurement of left ventricular...Full Text Available

2008-10-01

202

Use of explosive quick depressurization valves in the SBWR project. Dynamic loads induced by their operation  

International Nuclear Information System (INIS)

In General Electric's design of the Simplified Boiling Water Reactor (SBWR), The depressurization valves (DPV) are installed in the reactor pressure boundary: four are connected to the reactor vessel by means of nozzles, and two more are located on the main steam pipes (one DPV for each line), which act during particular transients and/or loss of coolant accidents (LOCA), consequently providing the reactor vessel with a safe quick depressurization system. Once the vessel is de pressurised, the passive gravity-driven cooling system (GDCS) starts to operate, permitting the injection of water required for continuous core cooling. DPVs are leak tight, with welded flaps, actuated by a [striker[hammer***] which is activated by an explosive mixture. The dynamic loads that open these valves include, in addition to those produced by steam (typical in any thermodynamic transient with open/close valves), other important loads that are ...

203

Development of magnetic drive packless valves for commercial purpose  

Energy Technology Data Exchange (ETDEWEB)

A study on development of magnetic drive packless valves for commercial purpose showed the results as follows; 1. Study on the radial rays effecting to the permanent magnets -Measurement of the strength of Nd-magnets according to irradiation of radial rays. 2. Effects of temperature on the magnetic driving device -Temperature dependency of the Nd-casting magnets. -Effects of temperature on the heat releasing fins of high-temperature valve. 3. Optimization of torque -Arranging method of permanent magnets -Measuring method and results of torque. 4. Design, manufacture and test for the pressure-resisting structure of magnetic power transmitting device -Calculation and design for the flat circular plates under pressure of the magnetic power transmitting device -Design, manufacture and test for the pressure-resisting structure of magnetic power transmitting device -Comparison of the characteristics between magnetic drive valve ...

1995-09-01

204

The application of 64 multidetector CT angiography in the evaluation of carotid stenosis and follow-up of carotid endarterectomy and percutaneous transluminal stenting  

International Nuclear Information System (INIS)

Objective: To evaluate the diagnostic value of 64 multidetector-row CT angiography for internal carotid artery (ICA) stenosis and the application in the follow-up of carotid endarterectomy and percutaneous transluminal stenting. Methods: Forty transient ischemic attack (TIA) patients with interpretable CTA and DSA of the cervical carotid arteries were selected from May 2005 to December 2005. This yielded a total of 80 vessels. The CTA curved planar reformations (CPR) and DSA images referenced to the distal cervical internal carotid were graded by two senior neuroradiologists blindly, according to the North American Symptomatic Carotid Endarterectomy Trial (NASCET) guidelines. The paired-t test was used to verify the statistical significant difference between pre-operating and post-operating of carotid endarterectomy or percutaneous transluminal stenting in measuring the vascular diameter and area of cross section using CTA. Results: When the ...

2006-09-01

205

Radiofrequency ablation of the gastrointestinal tract with a stent-like electrode: experimental study  

Energy Technology Data Exchange (ETDEWEB)

To assess the technical feasibility of a newly designed stent-like electrode in rabbits. A stent-like electrode was knitted from a single thread of nitinol wire and interconnected to a generator using similar wire. In order to gauge the extent of radiofrequency ablation (RFA), we measured the depth of the ablated area in cow liver using a combination of 180-sec time intervals and 20- watt power increments. For data processing, Cox regression analysis was used. RFA was also applied to the small intestine of rabbits using this stent-like electrode under six different sets of conditions: 10 watts for 1 min, 10 watts for 2 mins, 20 watts for 1 min, 20 watts for 2 mins, 30 watts for 1 min, and 30 watts for 2 mins. To determine the gross and microscopic findings, six animals were sacrificed immediately after the procedure and the results obtained under the different sets of conditions were correlated. Eight rabbits were monitored ...

2003-03-01

206

Whole-mount specimens in the analysis of en bloc samples obtained from revisions of resurfacing hip implants  

UK PubMed Central (United Kingdom)

BackgroundModern metal-on-metal hip resurfacing implants are being increasingly used for young and active patients, although the long-term outcome and failure mechanisms of these...Full Text Available

2010-06-01

207

Transient enhanced diffusion of Sb and B due to MeV silicon implants  

Energy Technology Data Exchange (ETDEWEB)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV ...

1997-06-01

208

Transient enhanced diffusion of Sb and B due to MeV silicon implants  

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant ...

209

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides  

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of ...

2004-06-01

210

Sensitivity of psychophysical measures to signal processor modifications in cochlear implant users  

UK PubMed Central (United Kingdom)

Experienced users of the Clarion cochlear implant were tested acutely with the HiResolution (HiRes) and HiRes Fidelity120 (F120) processing strategies. Three psychophysically-based tests were...Full Text Available

2010-04-01

211

Production and stability of implanted Pd-Si hydride  

Energy Technology Data Exchange (ETDEWEB)

Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd/sub 80/Si/sub 20/ films, we have studied the correlation between the hydrogen content and the resistivity.

1983-05-01

212

Paying for treatments? Influences on negotiating clinical need and decision-making for dental implant treatment  

UK PubMed Central (United Kingdom)

BackgroundThe aim of this study is to examine how clinicians and patients negotiate clinical need and treatment decisions within a context of finite resources. Dental implant treatment...Full Text Available

213

Noise Susceptibility of Cochlear Implant Users: The Role of Spectral Resolution and Smearing  

UK PubMed Central (United Kingdom)

The latest-generation cochlear implant devices provide many deaf patients with good speech recognition in quiet listening conditions. However, speech recognition deteriorates rapidly as the level of...Full Text Available

2005-03-01

214

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV ...

1999-03-01

215

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon  

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si ...

1999-03-01

216

Effects of Semantic Context and Feedback on Perceptual Learning of Speech Processed through an Acoustic Simulation of a Cochlear Implant  

UK PubMed Central (United Kingdom)

The effect of feedback and materials on perceptual learning was examined in normal hearing listeners exposed to cochlear implant simulations. Generalization was most robust when feedback paired...Full Text Available

2010-02-01

217

Early Wound Healing Following One-Stage Dental Implant Placement With and Without Antibiotic Prophylaxis: A Pilot Study  

UK PubMed Central (United Kingdom)

BackgroundOne-stage implant placement has clinically acceptable treatment outcomes. Among other advantages, it may allow investigation of early wound healing. The...Full Text Available

2008-10-01

218

Discrimination of Schroeder-Phase Harmonic Complexes by Normal-Hearing and Cochlear-Implant Listeners  

UK PubMed Central (United Kingdom)

The temporal fine structure (TFS) of sound contributes significantly to the perception of music and speech in noise. The evaluation of new strategies to improve TFS delivery in cochlear implants (CIs)...Full Text Available

2008-03-01

219

Calcification of subcutaneously implanted type I collagen sponges. Effects of formaldehyde and glutaraldehyde pretreatments.  

UK PubMed Central (United Kingdom)

Although collagen-containing implants are widely used in various surgical applications, there has been relatively little attention paid to the possibility that this type of biomaterial may undergo pathologic...Full Text Available

1986-01-01

220

Observation of a surface peak in low energy implant depth profiles in silicon  

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

1984-03-01

221

NEUROPLASTICITY and INNOVATION  

Science.gov (United States)

OF VOCALIZED SPEECH THROUGH. ANALYSIS OF NEURAL SIGNALS. " SYNTHETIC TELEPATHY- WIRELESS. TRANSMISSION OF DECODED. THOUGHTS. " IMPLANTABLE MEMORY-ELIMINATES ...

222

Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing  

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

2005-11-14

223

Guidance for Industry  

Science.gov (United States)

... central venous catheters (tunneled [eg, Hickman], subcutaneously implanted [eg, Porta-cath], and nontunneled), peripherally inserted central venous catheters ...

224

Alignment accuracy of focused ion beam implantation  

Energy Technology Data Exchange (ETDEWEB)

The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.

1987-06-01

225

The SPIRIT V Study:A Clinical Evaluation of the XIENCE V Everolimus-Eluting Coronary Stent System in the Treatment of Patients With De Novo Coronary Artery Lesions  

British Library Electronic Table of Contents (United Kingdom)

ObjectivesThe SPIRIT V (A Clinical Evaluation of the XIENCE V Everolimus-Eluting Coronary Stent System in the Treatment of Patients With De Novo Coronary Artery Lesions) study is a post-market surveillance experience of the XIENCE V (Abbott Vascular, Santa Clara, California) everolimus-eluting stent (EES) in patients with higher-risk coronary anatomy. BackgroundPrevious pre-approval studies have shown the safety and efficacy of EES in highly selected groups of patients. MethodsThe SPIRIT V trial is a prospective, open label, single arm, multicenter study. Two thousand seven hundred patients with multiple de novo coronary artery lesions suitable for treatment with a planned maximum of 4 EES were enrolled at 93 centers in Europe, Asia Pacific, Canada, and South Africa. Lesions had a referenc...

2011-01-01

226

Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation  

Energy Technology Data Exchange (ETDEWEB)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

1999-06-01

227

Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation  

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

1999-06-01

228

On the theory of transient enhanced diffusion in boron-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

1991-01-01

229

On the theory of transient enhanced diffusion in boron-implanted silicon  

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

230

Improvement of the parameters of shallow p"+-n-junctions in silicon by additional carbon implantation and step-by-step thermal treatments  

International Nuclear Information System (INIS)

In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)

231

Implantation-plasma treatment of martensitic steel and titanium alloy  

Energy Technology Data Exchange (ETDEWEB)

One of the effective methods of deep modification of the surface of steels and alloys is the combination of ion implantation and plasma nitriding. In this work, the long-range effect is demonstrated in the case of combination of the effect of high- and low-energy ions of nitrogen on a martensitic steel for each ion implantation is usually not effective, and a titanium alloy used widely in industry.

2001-07-01

232

Optimising the flow characteristic of a coke-oven flue-gas valve by means of Computational Fluid Dynamics (CFD); Stroemungsoptimierung eines Abgasventils von Koksoefen durch Computational Fluid Dynamics (CFD)  

Energy Technology Data Exchange (ETDEWEB)

In coke-oven operations flue-gas valves are used to switch the regenerator function from rich gas firing to lean gas firing. Compared with the simple geometry of the other parts of the flow path, which comprise flues and regenerators, the narrow and winding passages of the flue-gas valves give rise to relatively high losses in pressure. Without the construction of high (and therefore expensive) chimneys, this means that operating problems may well arise due the inadequate suction capacity. The project focused on the theoretical and experimental analysis of a coke-oven flue-gas valve. The primary aim was to reduce the pressure drop through the valve without modifying its external geomerty. The internal flow characteristics created by different valve geometries under a variety of operating conditions were simulated using the commercial CFD code Fluent/UNS, which provided velocity and ...

1999-06-01

233

Evaluation of the flow forces on a direct (single stage) proportional valve by means of a computational fluid dynamic analysis  

International Nuclear Information System (INIS)

The aim of this paper is to investigate the fluid dynamic behaviour of a commercial hydraulic proportional valve in order to evaluate and justify its global performances and, in particular, to analyze the effects of some additional design features on the reduction of the force required to maintain the valve open. The proposed analysis has been performed by applying the commercial computational fluid dynamics (CFD) code, Fluent, to the solution of the three dimensional turbulent flow field through a circumferential sector of the entire valve for different spool strokes. The reliability of the employed modelization is demonstrated by the comparison between the computed flow rate curve and the corresponding experimental data provided by the manufacturer. With regard to the metering edge design, it is shown that the cylindrical hole provided on the top of the hemi-spherical notch to improve metering at small ...

2007-03-01

234

How Much Does the Midline Incision Add to Urethral Diameter After Tubularized Incised Plate Urethroplasty? An Experimental Animal Study  

British Library Electronic Table of Contents (United Kingdom)

PurposeWe objectively quantified the gain in urethral diameter and the effect of stenting after tubularized incised plate urethroplasty in a rabbit hypospadias model. Materials and MethodsWe created a hypospadias model in 12 New Zealand white male rabbits by excising the ventral urethra. A 3 cm tattoo line was made longitudinally in the dorsal urethral plate midline. Two weeks later a 2 cm relaxing incision was made in the middle part of the tattooed line. The stretched incision width between the tattooed edges was measured, followed by urethral plate tubularization. Six rabbits were stented and 6 were nonstented. Two weeks later the animals were sacrificed and the distance separating the tattoo was measured at the midpoint of the tattooed line. Transverse sections at this point were exami...

2011-01-01

235

Clinical outcomes and risk factors for technical and clinical failures of self-expandable metal stent insertion for malignant colorectal obstruction  

British Library Electronic Table of Contents (United Kingdom)

BackgroundAlthough self-expandable metal stent (SEMS) insertion is widely used for relief of malignant colorectal obstructions, the immediate technical and clinical failure rates of SEMSs and the associated risk factors remain largely unknown. ObjectiveTo identify rates and factors predictive of technical and clinical failure of SEMSs when their use is attempted for the decompression of malignant colorectal obstruction. DesignRetrospective chart review. SettingA tertiary-care academic medical center in South Korea. PatientsThis study involved a total of 412 patients with malignant colorectal obstruction in whom SEMS insertion was attempted. InterventionPlacement of colonic SEMSs. Main Outcome MeasurementsTechnical success and immediate and long-term clinical success rates. ResultsTechnical...

2011-01-01

236

Aluminium Phosphide-Induced Esophageal Stricture Palliation with Polyflex Stent  

British Library Electronic Table of Contents (United Kingdom)

A 21-year-old woman developed midesophageal stricture two weeks after ingestion of aluminium phosphide (AlP) tablets. Aluminium phosphide is a lethal protoplasmic toxin and is also the most common cause of suicidal poisoning in northern India. Upper gastrointestinal endoscopy (UGIE) showed a tight esophageal stricture 29?cm from the incisors with a circumferential ulcer. Dilatation up to 17?mm was done using Savary-Gilliard dilators. She had repeated dilatations three times at nearly two-week intervals. In view of the resistant stricture, a silicone Polyflex stent was placed across the stricture and removed after 3?months; there was no recurrence of stricture even after three months of follow-up. Patients with recurrent esophageal stricture and those with fistula may benefit from silicone ...

2008-01-01

237

Surge pressure behavior in reduced diameter segments of shipping terminals; Comportamento de pulsos de pressao em trechos de diametro reduzido de dutos de terminais maritimos  

Energy Technology Data Exchange (ETDEWEB)

In a shipping terminal, the pipeline in the pier usually has a diameter smaller than the main pipeline diameter. This diameter reduction amplifies the effects caused by hydraulic transients. It was noticed during simulations that check valves placed in the pier may introduce some error in the maximum pressure when it was modeled in a conventional fashion. The dynamic check valve model had been added to a commercial pipeline simulation software and the results was compared with a similar model using the method of characteristics. Considering a real state shipping terminal case, it was proved even a pipeline that works with low pressure and smooth elevation profile needs a detailed valve modeling to prevent the calculation of unreal pressure values in the region with diameter reduction. (author)

2004-07-01

238

Modeling of a self-excited pulse combustor and stability analysis  

British Library Electronic Table of Contents (United Kingdom)

The major bottleneck for popularization and utilization of the conventional mechanical valve pulse combustors is the self-priming mode of gas supply. An aerodynamic valve (as against mechanical valve) self-excited pulse combustor of the Helmholtz-type with continuous supply of gas and air was designed and a mathematical model was established in this paper. The theoretical model employed well-stirred reactor model and a single step Arrhenius chemistry, and took those factors which might affect the combustion stability into account. The factors include the variation of the mass rate of the reactants affected by the pressure in the combustion chamber, the convective and radiation heat loss in the combustion chamber, and the heat transfer and wall friction in the tailpipe. The effect of wall t...

2011-01-01

239

Feedwater control device for a reactor  

International Nuclear Information System (INIS)

Purpose: To eliminate the water level deviation due to the recycling flowrate, as well as enable a stable control to a reference value even upon changes in the recycling flowrate caused by the variation in the opening degree of a minimum flow valve. Constitution: Reactor recycling system comprises a feedwater pump, a flowrate control valve, a reactor water level detector, and a minimum flow line and a minimum flow valve for preventing the overheating of the feedwater pump at a low flowrate. A flowrate compensator is further disposed, in which a recycling flowrate signal is subtracted from a pump flow rate signal and the result is fedback as a compensated pump flowrate signal. This enables the control system to operate at a rapid response for suppressing the effect of the recycling flowrate as external disturbance, whereby the water level in the reactor can be controlled stably to the reference level and the possibility ...

1981-11-18

240

Feedwater control device for a reactor  

International Nuclear Information System (INIS)

Purpose: To stably control the reactor water level so as not to cause excess water feeding in a BWR type reactor. Constitution: A flow control valve is disposed to the exit of a feedwater pump for a nuclear reactor and the valve is controlled by a flow regulator to maintain the water level constant in the reactor. A signal from a water level controller is inputted to the flow regulator to thereby control the flow rate control valve. In this case, the flow regulator remains in a saturated state just after the starting of the feedwater pump, in which the pump flowrate is at 100% to result in an excess water feeding condition. In view of the above, a feedback circuit is provided to the flow regulator so that the saturated state is eliminated and the water feeding can be controlled directly from the water level controller. (Kamimura, M.).

1981-11-12

241

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon  

International Nuclear Information System (INIS)

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

2005-11-07

242

Status and progress in ion implantation technology for semiconductor device manufacturing  

International Nuclear Information System (INIS)

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

1998-12-08

243

RHEED, AES and XPS studies of the passive films formed on ion implanted stainless steel  

International Nuclear Information System (INIS)

P-implantation (10"1"7 ions cm"-"2, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H_2SO_4+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H_2SO_4. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

2005-05-26

244

RHEED, AES and XPS studies of the passive films formed on ion implanted stainless steel  

Energy Technology Data Exchange (ETDEWEB)

P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

1981-12-01

245

Photosensitivity and imaging characteristics of ion-implanted PLZT ceramics  

International Nuclear Information System (INIS)

We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

1985-08-12

246

Ion implantation into concave polymer surface  

Energy Technology Data Exchange (ETDEWEB)

A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows ...

2006-01-15

247

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion  

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

2003-11-17

248

In-vitro evaluation of corrosion resistance of nitrogen ion implanted titanium simulated body fluid  

International Nuclear Information System (INIS)

Titanium and its alloy Ti6Al4V enjoy widespread use in various biomedical applications because of favourable local tissue response, higher corrosion resistance and fatigue strength than the stainless steels and cobalt-chromium alloy previously used. The study reported in this paper aims to optimize the conditions of nitrogen ion implantation on commercially pure titanium and to correlate the implantation parameters to the corrosion resistance. X-ray photoelectron spectroscopy was used to analyse surface concentration and the implantation processes. An improvement in the electrochemical behaviour of the passive film was shown to occur with nitrogen ion implantation on titanium, in simulated body fluids. (UK).

249

Implantation processing of Si: A unified approach to understanding ion-induced defects and their impact  

Energy Technology Data Exchange (ETDEWEB)

A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting ...

1997-05-01

250

Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon  

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

1989-04-25

251

Bacterial adhesion reduction on a biocompatible Si^+ ion implanted austenitic stainless steel  

British Library Electronic Table of Contents (United Kingdom)

The colonization of an implant surface by bacteria is an extremely important medical problem, which often leads to the failure of medical devices. Modern surface modification techniques, such as ion implantation, can confer to the surfaces very different properties from those of the bulk underlying material. In this work, austenitic stainless steel 316 LVM has been superficially modified by Si^+ ion implantation. The effect of surface modification on the biocompatibility and bacterial adhesion to 316 LVM stainless steel has been investigated. To this aim, human mesenchymal stem cells (hMSCs), as precursor of osteoblastic cells, and bacterial strains relevant in infections related to orthopedic implants, i.e., Staphylococcus aureus and Staphylococcus epidermidis, have been assayed. For the ...

2011-01-01

252

Annealing of silicon implanted with arsine and hydrogen ions  

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

2003-01-01

253

XPS study of the passive films formed on nitrogen-implanted austenitic stainless steels  

Energy Technology Data Exchange (ETDEWEB)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H{sub 2}SO{sub 4}). Alloys with two nitrogen doses have been prepared (2.5x10{sup 16} and 2x10{sup 17} N atoms/cm{sup 2}). The implanted alloys have been characterized by {sup 15}N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen ...

1992-05-01

254

XPS study of the passive films formed on nitrogen-implanted austenitic stainless steels  

International Nuclear Information System (INIS)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical ...

1992-01-01

255

Modification of the passivity of iron based alloys through ion implantation  

International Nuclear Information System (INIS)

As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 ...

1764-01-01

256

Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation ...

2003-12-31

257

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films  

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

258

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films  

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

1993-07-16

259

Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation  

Energy Technology Data Exchange (ETDEWEB)

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near ...

1997-04-01

260

Doping of silicon carbide by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, ...

2001-07-01

261

Relationships of valve histology and mitochondrial and myofibril volume densities to hypertrophy of copper-deficient rat hearts  

Energy Technology Data Exchange (ETDEWEB)

Twenty-four male weanling rats were fed either copper-adequate or -deficient diets until 9 or 11 weeks of age. Deficient rat hearts had increased mitochondria: myofibril compared to adequate rats. Eleven week old deficient rat hearts had decreased mitochondria: myofibril as the hearts increased in weight, but the larger hearts had greater myofibril volume densities. Cardiac mitochondria of deficient rats appeared vacuolated with fragmented cristae and translucent matrix. Valves from copper deficient rats appeared to have less connective tissue and were fragmented in areas. For deficient rats, heart:body weights of 9 wk old rats were negatively correlated with bicuspid valve pathology scores, whereas tricuspid valve scores from 11 wk old rats were negatively correlated with myofibril volume densities. These data suggest that the enlargement of the copper-deficient rat heart is due to: larger (1) mitochondria and (2) ...

1991-03-15

262

Primary coolant depressurization facility  

Energy Technology Data Exchange (ETDEWEB)

In a PWR type reactor, a primary coolant circuit system using a steam generator is adopted in order to accelerate depressurization of a primary coolant circuit upon small rupture LOCA in which the pressure of the primary coolant circuit is moderately depressurized. A secondary coolant circuit depressurization valve is disposed to a main steam pipeline. The valve has a performance of automatically opening to remove heat by evaporation of water stored in SG for a short period of time when the pressure in the primary circuit is decreased to about 50kg/cm[sup 2] upon occurrence of LOCA or the like. Then, the secondary side of the SG is depressurized to about atmospheric pressure and gravitational water injection from a condensate tank is started. Further, a gas vent valve is disposed to a water chamber of the steam generator. The valve has a performance of automatically opening to discharge incondensible ...

1992-10-14

263

Malfunction of a Heimlich flutter valve causing tension pneumothorax: case report of a rare complication  

UK PubMed Central (United Kingdom)

BackgroundThoracic injuries play an important role in major trauma patients due to their high incidence and critical relevance. A serious consequence of thoracic trauma is pneumothorax,...Full Text Available

264

Lower Urinary Obstruction in Infancy  

UK PubMed Central (United Kingdom)

This paper reviews 165 cases of lower urinary obstruction in infancy. The commonest lesions were posterior urethral valves (91) and ectopic ureterocele (34), stenosis or atresia of the urethra (8),...Full Text Available

1972-04-01

265

Hydraulic system for driving control rods  

International Nuclear Information System (INIS)

Purpose: To enable safety reactor shut down upon occurrence of an abnormal excess pressure in a hydraulic control unit. Constitution: The actuation pressure for a pressure switch that generates a scram signal is set lower than the release pressure set to a pressure release valve. Thus, if the pressure of nitrogen gas in a nitrogen container increases such as upon exposure of the hydraulic control unit to a high temperature, the pressure switch is actuated at first to generate the scram signal and a scram valve is opened to supply water at high pressure to control rod drives under the driving force of the nitrogen gas at high pressure to rapidly insert the control element into the reactor and shut down it. If the pressure of the nitrogen gas still increases after the scram, the pressure release valve is opened to release the nitrogen gas at high temperature to the atmosphere. Since the scram is attained before the actuation ...

1980-11-07

266

EDF's experience in the operation of pump-storage plants  

Energy Technology Data Exchange (ETDEWEB)

This paper describes the advent of energy pumped storage plants in France, in connection with nuclear power reactors development and gives detailed specifications of different components (pump turbines, alternators, valves ...). 5 figs., 3 tabs.

1992-01-01

267

Double-Valve Libman-Sacks Endocarditis Causing Ventricular Fibrillation Cardiac Arrest  

UK PubMed Central (United Kingdom)

Libman-Sacks endocarditis is a well-known and rather common cardiac manifestation of systemic lupus erythematosus. Transesophageal and transthoracic echocardiography are the definitive imaging methods...Full Text Available

2011-01-01

268

Development of new decompression brake for large diesel engine. Part 2. Evaluation on durability and reliability; Ogata diesel engine yo shingata asshukuatsu kaihoshiki brake no kaihatsu. 2. Taikyu shinraisei no kaihatsu  

Energy Technology Data Exchange (ETDEWEB)

This report deals with the establishment of durability and reliability for the new type decompression brake system for large diesel engines. By testing engines on the bench, it has been found that the cylinder pressure, with the cylinder at the compression stroke upper dead center, imposed on the exhaust valve bevel section during brake operation constitutes the maximum load on the valve train system, that the cylinder pressure, with the cylinder at the compression stroke upper dead center, rises in proportion to a rise in the engine rpm, and that the load on the valve train system is at its maximum when the exhaust valve opens by brake operation. By examining the conditions whereunder a real vehicle was allowed to run, it has been found that the brake is applied approximately four times more often when the vehicle runs in a city area than on an expressway and that when running on the expressway the ...

1995-04-20

269

Design of the Endobronchial Valve for Emphysema Palliation Trial (VENT): a non-surgical method of lung volume reduction  

UK PubMed Central (United Kingdom)

BackgroundLung volume reduction surgery is effective at improving lung function, quality of life, and mortality in carefully selected individuals with advanced emphysema. Recently,...Full Text Available

270

Decrease in dust content and removal of sludge during drilling ascending shafts in coal  

Energy Technology Data Exchange (ETDEWEB)

Results are presented of analysis of the dust content of air and the resources for removing sludge at the mines of the Kuzbass during drilling of ascending shafts. A design is proposed for sludge removing devices with automatic opening and closing of the valve hinges.

1983-01-01

271

Chylopericardium after cardiac surgery can be treated successfully by oral dietary manipulation: a case report  

UK PubMed Central (United Kingdom)

We report a case of chylopericardium after ascending aorta and aortic valve replacement, which presented as late tamponade. We discuss the various treatment options in this rare condition which can...Full Text Available

272

40 CFR 63.322 - Standards.  

Science.gov (United States)

...Filter gaskets and seatings; (4) Pumps; (5) Solvent tanks and containers; (6) Water separators; (7) Muck cookers; (8) Stills; (9) Exhaust dampers; (10) Diverter valves; and (11) All Filter housings. (l)...

2009-07-01

273

Percutaneous transluminal angioplasty and stent insertion in central venous steno-occlusion  

Energy Technology Data Exchange (ETDEWEB)

To evaluate the efficacy of percutaneous transluminal angioplasty (PTA) and stent insertion in central venous steno-occlusion. Between August 1992 and January 1998, 11 patients with symptomatic central venous steno-occlusion (six stenoses and five occlusions) underwent pereutaneous treatment. Eleven PTAs were performed and stents were introduced in two patients because of incomplete PTA. During follow-up, a total of eight revisions were performed in five patients with recurrence (six stenoses and two occlusions). Success and long term patency rates were evaluated. The length and degree of the lesion and degree of residual stenosis, as well as pressure gradient through the lesion and decrease of the gradient after PTA, were correlated with patency rates. Complications during the procedures and follow-up period were evaluated. The overall success rate was 89.5%;those of primary and revision intervention were 90. 9% and 87.5%, respectively. ...

1998-12-01

274

Towards a realistic model of Fe-Cu-Fe spin valve systems using tight-binding methods  

Energy Technology Data Exchange (ETDEWEB)

Full text: Magnetic multilayer materials are becoming technologically important as they provide a more efficient means of magnetic reading and storage through utilisation of their giant magnetoresistance and oscillatory magnetic coupling. This study presents preliminary tight-binding calculations with a view of developing a consistent tight-binding model of `spin valve` Fe-Cu-Fe tri-layer materials. Further work involves using a self-consistent tight-binding approach to obtain a more accurate picture of this system and a better understanding of surface effects at the Fe-Cu interface 1 fig., 4 refs.

1996-12-31

275

Requirements and guidelines for NSLS experimental beam line vacuum systems: Revision A  

Energy Technology Data Exchange (ETDEWEB)

Requirements are provided for NSLS beam line front ends and vacuum interlocks. Guidelines are provided for UHV beam line vacuum systems, including materials, vacuum hardware (pumps, valves, and flanges), acoustic delay lines and beam line fast valves, instrumentation, fabrication and testing, and the NSLS cleaning facility. Also discussed are the design review for experimenters' equipment that would be connected to the NSLS and acceptance tests for any beam line to be connected with the ring vacuum. Also appended are a description of the acoustic delay line as well as the NSLS vacuum standards and NSLS procedures. (LEW)

1986-10-01

276

Modeling of feed water check valves using RELAP5; Modellierung von Speisewasserrueckschlagventilen in RELAP5  

Energy Technology Data Exchange (ETDEWEB)

Westinghouse Electric Germany GmbH has developed fluid dynamic models for medium-actuated armatures using the thermal hydraulic code RELAP5 in order to reach a more realistic description of the armature behavior including fluid-structure interactions in case of transient flow conditions in piping systems. The contribution is concerned with the modeling of damped check valves. The model allows the description of the behavior during opening and closure of a check armature. The calculated results show good agreement with the available measured data.

2009-07-01

277

Freeze protection valve and system  

Energy Technology Data Exchange (ETDEWEB)

The present invention is a device for a solar heating system having a solar collector, a storage tank connected to the solar collector, a pump for circulating liquid from the tank to the solar collector, a supply of liquid at a temperature above freezing and a connection from the supply of liquid to the solar collector for replacing any liquid lost from said solar collector. The device comprises a sensor for sensing the temperature of liquid in the solar collector, and a valve for bleeding liquid from the solar collector when the sensed temperature falls below a predetermined minimum whereby cool liquid in the solar collector is automatically replaced by liquid at a temperature above freezing.

1985-12-10

278

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of ...

1997-05-01

279

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon  

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from ...

280

Understanding and controlling transient enhanced dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which ...

1995-12-31

281

Understanding and controlling transient enhanced dopant diffusion in silicon  

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which ...

282

The effect of boron implant energy on transient enhanced diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are ...

1997-02-01

283

Reversible downregulation of endocrine and germinative testicular function (hormonal castration) in the dog with the GnRH-Agonist Azagly-Nafarelin as a removable implant "Gonazon"; a preclinical trial  

British Library Electronic Table of Contents (United Kingdom)

Downregulation of anterior pituitary GnRH-receptors by application of a slow release GnRH-implant offers an effective and reversible alternative to surgical castration of the male dog. Aim of the present study was to test the efficacy and the underlying mechanisms of a new non-biodegradable controlled-release device implant (Gonazon, Intervet, containing 18.5mg of the GnRH-agonist Azagly-Nafarelin). Eight male beagle dogs were implanted s.c. at the para-umbilical region. In four dogs implant removal was after 180 days (group 1), in the other four dogs after 365 days (group 2). Eleven weeks after implantation availability of LH was reduced (p<0.0001) by 70%. After an initial increase lasting for about 4 days, testosterone (T) and estradiol (E2) concentrations decreased (p<0.0001) to basal l...

2009-01-01

284

Reduction of transient diffusion from 1{endash}5 keV Si{sup +} ion implantation due to surface annihilation of interstitials  

Energy Technology Data Exchange (ETDEWEB)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here ...

1997-11-01

285

Reduction of transient diffusion from 1 endash 5 keV Si"+ ion implantation due to surface annihilation of interstitials  

International Nuclear Information System (INIS)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of ...

286

Low temperature formation of shallow p{sup +}n junctions by BF{sub 2}{sup +} implantation into thin Pd{sub 2}Si films on Si substrates  

Energy Technology Data Exchange (ETDEWEB)

Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film ...

1995-05-01

287

Low energy boron implantation in silicon: (1) reduction of channeling tail by careful alignments. (2) Transient diffusion during rapid thermal annealing  

Energy Technology Data Exchange (ETDEWEB)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion ...

1985-01-01

288

Low energy boron implantation in silicon: (1) reduction of channeling tail by careful alignments. (2) Transient diffusion during rapid thermal annealing  

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of ...

289

Human bone matrix gelatin as a clinical alloimplant. A retrospective review of 160 cases.  

Science.gov (United States)

Bone matrix gelatin, prepared by sequential chemical treatment including decalcification with 0.6 N hydrochloric acid [9], was used as an alloimplant for the treatment of benign bone tumours, tumorous conditions of bone, acetabular dysplasia, delayed union, traumatic bone defects and other disorders. The bone matrix gelatin implanted into bone defects was incorporated successfully in 98% of implantations, excluding cases of infection, tumour recurrence and recurrence of tumorous conditions. The material was also implanted into ten bone sites as an onlay but in five it was resorbed without new bone formation. The incorporation of the bone matrix gelatin into the recipient bed was completed from 6 to 33 months (average 14.9 months) after implantation. Wound infection complicated 5 of 165 implantations (3%) in previously uninfected sites. Low grade fever persisting after the tenth ...

1985-01-01

290

Electrical and structural properties of ion-implanted and post-annealed silicide films  

Energy Technology Data Exchange (ETDEWEB)

The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to ...

1982-05-01

291

Electrical and structural properties of ion-implanted and post-annealed silicide films  

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature ...

292

Diffusion modeling of ion implanted boron in Si during RTA: Correlation of extended defect formation and annealing with the enhanced diffusion of boron. [Rapid Thermal Annealing  

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...

1993-01-01

293

Defects induced by focused ion beam implantation in GaAs  

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

1988-05-01

294

Defects induced by focused ion beam implantation in GaAs  

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

295

Current trends in ion implantation  

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work ...

2001-07-01

296

Anomalous phosphorus diffusion in Si during postimplantation annealing  

Energy Technology Data Exchange (ETDEWEB)

The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged ...

2001-06-11

297

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation ...

1991-01-01

298

Annealing and diffusion characteristics of boron-through-oxide implanted silicon  

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time ...

299

A detailed physical model for ion implant induced damage in silicon  

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model ...

1998-06-01

300

A detailed physical model for ion implant induced damage in silicon  

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has ...

1998-06-01

301

Study of penetration depth for V"+ with low energy implanted in peanut seeds  

International Nuclear Information System (INIS)

The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95

2002-11-01

302

Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

1996-12-01

303

Precipitation, phase transformation, and enhanced diffusion in ion-implanted silicon  

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

304

Plasma immersion ion implantation. (Latest citations from the EI Compendex*plus database). Published Search  

Energy Technology Data Exchange (ETDEWEB)

The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

1998-01-01

305

Nanostructure of Si-Ge near-surface layers produced by ion implantation and laser annealing  

International Nuclear Information System (INIS)

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

2001-09-23

306

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants  

Energy Technology Data Exchange (ETDEWEB)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1997-11-01

307

Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants  

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

1996-12-02

308

Application of high energy ion beam for the control of boron diffusion  

Energy Technology Data Exchange (ETDEWEB)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

2006-01-15

309

Application of high energy ion beam for the control of boron diffusion  

International Nuclear Information System (INIS)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

2006-01-01

310

A spatial damage energy distribution calculation for ion-implanted materials  

International Nuclear Information System (INIS)

A simple method allowing easy calculation of the spatial damage energy distributions for ion-implanted materials is presented. The direct procedure takes account of the variation with depth of the lateral spreading of implanted ions, as well as the effects of energy transport by the recoiling target atoms. The subsequent computer program LUPIN-3D provides three-dimensional damage distributions and allows the construction of damage energy mappings. Various substrates of technological interest are investigated and several fields of application of the calculation are envisaged. The density of cascades can therefore be determined and heterogeneous amorphization models can be implemented. (orig.).

1989-01-01

311

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

1985-08-01

312

Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

313

Transient enhanced diffusion and gettering of dopants in ion implanted silicon  

International Nuclear Information System (INIS)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.

1984-11-26

314

Transient enhanced diffusion and gettering of dopants in ion implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.

1986-01-01

315

Transient enhanced diffusion and gettering of dopants in ion implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.

1984-01-01

316

Transient enhanced diffusion and gettering of dopants in ion implanted silicon  

International Nuclear Information System (INIS)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.

317

The effect of ion implantation of Ar on the aqueous corrosion resistance of Zr-4 alloy  

International Nuclear Information System (INIS)

The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).

318

Surgeons' beliefs and perceptions about removal of orthopaedic implants  

UK PubMed Central (United Kingdom)

BackgroundThe routine removal of orthopaedic fixation devices after fracture healing remains an issue of debate. There are no evidence-based guidelines on this matter, and little...Full Text Available

319

Suppression of transient enhanced diffusion following {ital in} {ital situ} photoexcitation during boron ion implantation  

Energy Technology Data Exchange (ETDEWEB)

The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

1995-10-09

320

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation  

International Nuclear Information System (INIS)

The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.

321

Selective radiochemical separation for indium determination at ppb levels in ion-implanted semiconductor-grade silicon  

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

1982-12-23

323

Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon  

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

1999-01-01

324

Optical and Structural Characteristics of Heavily Boron ...  

Science.gov (United States)

... Abstract : Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. ...

1988-05-24

325

NASA partners with teacher institute NASA strives to improve computers  

Science.gov (United States)

of the digital hearing aid technology that led to the cochlear implant. Former. Marshall Space Flight Center engineers. John Richardson and Joseph Howard ...

326

Microradiographic examination with the mammographic device 'TUR' after enossal implantation of glass ceramics (bio-vitroceramics)  

International Nuclear Information System (INIS)

As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operationem. A silicat salt addition of the test variation Ap_4_0KS_1_5 and Ap_4_0KS_3_0 did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 #mu#m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 #mu#m thickness directed to the nucleus of the implant.

327

Microradiographic examination with the mammographic device 'TUR' after enossal implantation of glass ceramics (bio-vitroceramics)  

Energy Technology Data Exchange (ETDEWEB)

As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operation. A silicate salt addition of the test variation Ap/sub 40/KS/sub 15/ and Ap/sub 40/KS/sub 30/ did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 ..mu..m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 ..mu..m thickness directed to the nucleus of the implant.

1984-01-01

328

Excessive bleeding in the floor of the mouth after endosseus implant placement: a report of two cases  

British Library Electronic Table of Contents (United Kingdom)

Placement of dental implants in the interforaminal region of the edentulous mandible is considered a safe and routine surgical procedure. Hemorrhage in the floor of the mouth has been reported as a rare, potentially life-threatening complication related to the placement of implants in this region. In this case report the authors present an immediate and a delayed case of massive bleeding in the floor of the mouth after implant placement. This highly vascularized region is vulnerable and bleeding can be induced easily by instrumentation, causing a vascular trauma, usually by perforation of lingual periostium. In almost all cases the expanding hematoma formation starts during surgery. The effect of the vasoconstrictive agent in the local anesthesic combined with an injury of the lingual arte...

2010-01-01

329

Enhancement of electrical conductivity of ion-implanted polymer films  

Energy Technology Data Exchange (ETDEWEB)

The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of ...

1985-01-01

330

Early Loading after 21 Days of Healing of Nonsubmerged Titanium Implants with a Chemically Modified Sandblasted and Acid-Etched Surface: Two-Year Results of a Prospective Two-Center Study  

British Library Electronic Table of Contents (United Kingdom)

ABSTRACT Purpose: The aim of this two-center study was to evaluate screw-type titanium implants with a chemically modified, sandblasted and acid-etched surface when placed in the posterior maxilla or mandible, and loaded 21 days after placement. Material and Methods: All 56 patients met strict inclusion criteria and provided informed consent. Each patient displayed either a single-tooth gap, an extended edentulous space, or a distal extension situation in the posterior mandible or maxilla. Eighty-nine dental implants (SLActive, Institut Straumann AG, Basel, Switzerland) were inserted according to an established nonsubmerged protocol and underwent undisturbed healing for a period of 21 days. Where appropriate, the implants were loaded after 21 days of healing with provisional restorations i...

2010-01-01

331

Diffusion of antimony in silicon in the presence of point defects  

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

2007-08-15

332

Diffusion of antimony in silicon in the presence of point defects  

International Nuclear Information System (INIS)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

2007-08-01

333

Depth Profiling of N and C in Ion Implanted ZnO and Si Using Deuterium Induced Nuclear Reaction Analysis  

International Nuclear Information System (INIS)

Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion ...

2008-11-03

334

Crystal Chemistry of Ceramic/Mineral Systems  

Science.gov (United States)

... 1. Reeber, RR, Kusy, RP, Yu, N. and Chu, WK " Formation of a Solid Lubricant in Boron Carbide by Nitrogen Ion Implantation and Laser Annealing ...

1992-12-08

335

Creation of nitrogen-vacancy centres in diamond with high resolution  

International Nuclear Information System (INIS)

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

2010-03-21

336

Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions  

Energy Technology Data Exchange (ETDEWEB)

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

1997-12-01

338

#left brace#311#right brace# Defects in ion-implanted silicon: The cause of transient diffusion, and a mechanism for dislocation formation  

International Nuclear Information System (INIS)

Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.

1995-03-20

339

Study of silicon damage caused by ultra-low energy boron implantation  

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross ...

340

Commissioning and operation of new liquid poison injection based shut down system in TAPP-3 and 4  

International Nuclear Information System (INIS)

Shut Down System - 2 (SDS - 2) of TAPP-3 and 4 works on the principle of rapid injection of gadolinium nitrate poison solution into bulk moderator in calandria using high pressure helium to shut down the reactor. This is a new system, in the context of Indian PHWRs, designed, engineered, commissioned and being operated in TAPP-3 and 4. The system design incorporates passive features such as floating polyethylene ball with ball-ball seat arrangement and locked open isolation ball valves with key interlock arrangement. This arrangement eliminates active valves downstream of poison tanks during SDS - 2 actuation. A series parallel arrangement of fast acting pilot controlled air operated valves, which keep the high pressure helium isolated from poison tanks in poised state, are the only active components. During commissioning and initial period of operation of TAPP-4, problems were encountered and were resolved by suitable ...

2006-11-13

341

The Effect of Heat Treatment and Mechanical Polishing on Nitinol Stent  

Energy Technology Data Exchange (ETDEWEB)

To understand the effect of heat treatment and mechanical polishing of a Nitinol wire on the chemical composition and physical morphology of the wire surface. Stents with a diameter of 1.0 cm, length of 8-10 cm, and composed of a Nitinol wire, were heat-treated at 500 .deg. C for 30 minutes, and mechanically polished with walnut shell granules. The wire surface morphology was studied with both an optical and a scanning electron microscope (SEM). In addition, an elemental analysis was performed by Energy Dispersive X-ray spectroscopy (EDX). Long microcracks along the wire direction and short microcracks across the wire were observed by SEM from the raw Nitinol wire. Upon heat treatment, the color of the wire turned blue, and Na, K, Cl, Si, Al atoms were seen from the EDX of the heat treated wire, which were absent in the original wire. The microcracks disappeared with the mechanical polishing, and the Na, K, Cl, Si, Al atoms all disappeared after the mechanical ...

2009-09-15

342

Stent-assisted recanalization of atherosclerotic intracranial stenosis  

International Nuclear Information System (INIS)

Intracranial atherosclerosis is a major cause of ischemic stroke, and depending on the studied population, it accounts for 8%-15% of all strokes that are due to cerebral atherosclerosis. The prognosis of patients with symptomatic intracranial stenoses seems to depend on the location and extent of intracranial atherosclerosis. Currently, the primary treatment in intracranial atherosclerosis is the control of vascular risk factors such as hypertension, diabetes, hypercholesterolemia, and smoking. Secondary prevention with antiplatelet therapy has been shown to reduce the risk of subsequent vascular events in patients who have suffered a recent ischemic stroke or transient ischemic attack (TIA). Unfortunately, a significant number of patients with intracranial atherosclerosis continue to suffer from repeated strokes or TIA despite maximal medical treatment. Although endovascular revascularization for symptomatic intracranial stenoses remains at the investigational stage and much of the ...

2006-09-01

343

Transient enhanced diffusion from decaborane molecular ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by ...

1998-10-01

344

Transient enhanced diffusion from decaborane molecular ion implantation  

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess ...

1998-10-01

345

Transient enhanced diffusion and deactivation of ion-implanted As in strained Si  

International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

2005-08-01

346

Simulation of arsenic diffusion during rapid thermal annealing of silicon layers doped with low-energy high-dose ion implantation  

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

2005-09-01

347

Recommendations and quality control in brachytherapy; Recommandations pour le controle de qualite en curietherapie  

Energy Technology Data Exchange (ETDEWEB)

Brachytherapy consists of sealed radioactive source implantation. The diversity in the nature of radioelements, in their energy and activity requires strict implantation and utilization rules. These rules include radioactive source physical parameters check, after-loading machine and treatment planning system quality assurance and safe and reproducible dosimetric systems. Patient and medical workers information guarantee radioprotection and prevention of accidental exposures. (authors)

2002-11-01

348

Pitting and intergranular corrosion resistances of nitrogen ion implanted type 304 stainless steel  

International Nuclear Information System (INIS)

Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, insignificant IGC attack was noticed. The IGC resistance increased with increase in the dose for all the specimens aged at 973 K, and the ...

1998-05-24

349

Outcome of in-the-bag implanted square-edge polymethyl methacrylate intraocular lenses with and without primary posterior capsulotomy in pediatric traumatic cataract  

UK PubMed Central (United Kingdom)

Purpose:To study the outcome of in-the-bag implanted square-edge polymethyl methacrylate (PMMA) intraocular lenses (IOL) with and without primary posterior capsulotomy in...Full Text Available

2011-09-01

350

Optical image storage in ion implanted PLZT ceramics  

International Nuclear Information System (INIS)

We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the ...

351

Introduction to corrosion of bioimplants  

British Library Electronic Table of Contents (United Kingdom)

The review provides a general idea about the types of metallic alloys and the pure metals used as implant materials in dental and orthopedic surgery. Their corrosive behavior in both real solutions and various media that model human biological fluids is described. Based on the literature data, it is concluded that multicomponent alloys containing titanium, niobium, zirconium, tungsten, molybdenum, aluminum, and silicon are the most resistant to corrosion. Implants made of different types of stainless steel are preferred when manufacturing orthopedic devices for short-term use.

2011-01-01

352

Boron uphill diffusion during ultrashallow junction formation  

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

2003-05-26

353

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly ...

1989-01-01

354

A study of palladium silicide formed by focused ion beam implantation of palladium ions  

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. ...

355

5.6-nm p"+/n junction formation for sub-0.05-#mu#m PMOSFETs by using low-energy B_1_0H_1_4 ion implantation  

International Nuclear Information System (INIS)

Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction ...

2004-06-01

356

The role of interventional radiology in management of patients with end-stage renal disease  

Energy Technology Data Exchange (ETDEWEB)

The aim of the paper is to review the role of interventional radiology in the management of hemodialysis vascular access and complications in renal transplantation. The evaluation of patients with hemodialysis vascular access is complex. It includes the radiology/ultrasound (US) evaluation of the peripheral veins of the upper extremities with venous mapping and the evaluation of the central vein prior to the access placement and radiological detection and treatment of the stenosis and thrombosis in misfunctional dialysis fistulas. Preoperative screening enables the identification of a suitable vessel to create a hemodynamically-sound dialysis fistula. Clinical and radiological detection of the hemodynamically significant stenosis or occlusion demands fistulography and endovascular treatment. Endovascular prophylactic dilatation of stenosis greater than 50% with associated clinical abnormalities such as flow-rate reduction is warranted to prolong access patency. The technical success ...

2003-05-01

357

Performance Assessment of Wolsung Unit 2 Safety Grade Pumps using In-Service Test  

Energy Technology Data Exchange (ETDEWEB)

Nuclear power plant has several safety features and each safety feature is based on the operation of pumps and valves. Therefore, it is an essential basis for the safety of nuclear power plant to keep operational readiness of pumps and valves by In-Service Test (IST). According to Ministry of Education, Science and Technology (MEST) Bulletin 2008-14, the safety functioned pumps and valves of all nuclear power plants of Korea Hydro and Nuclear Power Co. Ltd.(KHNP) have been tested to verify their performance of safety function. Each safety grade pump has own design requirement and should be tested to identify whether it could meet the requirement. Design requirements and test references of all safety grade pumps of Wolsung Nuclear Power Plant Unit 2 (Wolsung Unit 2) were examined in this study. And the results of the performance test of the pump were also compared to the design requirements of each pump.

2008-10-15

358

Performance Assessment of Wolsung Unit 2 Safety Grade Pumps using In-Service Test  

International Nuclear Information System (INIS)

Nuclear power plant has several safety features and each safety feature is based on the operation of pumps and valves. Therefore, it is an essential basis for the safety of nuclear power plant to keep operational readiness of pumps and valves by In-Service Test (IST). According to Ministry of Education, Science and Technology (MEST) Bulletin 2008-14, the safety functioned pumps and valves of all nuclear power plants of Korea Hydro and Nuclear Power Co. Ltd.(KHNP) have been tested to verify their performance of safety function. Each safety grade pump has own design requirement and should be tested to identify whether it could meet the requirement. Design requirements and test references of all safety grade pumps of Wolsung Nuclear Power Plant Unit 2 (Wolsung Unit 2) were examined in this study. And the results of the performance test of the pump were also compared to the design requirements of each pump.

2008-10-01

359

Liquid zone system events at Wolsong Unit 2  

International Nuclear Information System (INIS)

On June 19, 1998, after the first annual outage, Wolsung Unit 2 was shutdown at a controlled rate due to the continuous instability of Liquid Zone Control level. Investigation revealed that the Liquid Zone Control level instability was caused by water condensed inside the helium lines, generated from the moistened helium flow, especially, inside the helium balance header feed and bleed valve lines. It was found that improper installation of the diaphragm type isolation valves and the drain valve tap could easily contain the water inside the lines and be destined to form water traps causing the balance header pressure oscillation. After the lines were dried, Liquid Zone Control level instability was almost vanished, and approached the allowable equilibrium state. As the reactor power was increased, however, the zone level instability increased again. In order to compensate for the excessive, the Bulk Power Control Gain (Kp) ...

1998-09-07

360

Dynamic load in suppression pool during BWR main steam safety relief valve actuation  

International Nuclear Information System (INIS)

BWRs are so designed that the exhaust steam from main steam safety relief valves is led to pressure suppression pools, and the steam is condensed in pool water, but at this time, dynamic load seems to arise in the pool water. In Tokai No. 2 Power Station, a Mark-2 containment vessel was adopted to improve the reliability as much as possible and to obtain the design with margin. In this report, the result of actual machine test in Tokai No. 2 Power Station and the method of reducing the load are described. When a relief valve works, the discharge of water in exhaust pipes into a suppression pool, the exhaust of air in exhaust pipes and repeated expansion and contraction of bubbles in pool water, and the exhaust of steam and condensation occur. As for the construction of the suppression pool in Tokai No. 2 Power Station, cross-shaped quencher and the structure with jet deflector were installed. The test plan and the test result with an actual ...

1979-01-01

361

CATHENA simulation of the WOLSUNG D_20 spill incident of 1984 November 25  

International Nuclear Information System (INIS)

The CATHENA (formerly ATHENA) has been used to simulate the thermalhydraulic behaviour of the WOLSUNG-1 CANDU-600 reactor during the D_20 spill incident of 1984 November 25. A 4-inch (nominal) Liquid Relief Valve inadvertently opened in the reactor auxiliary system during normal reactor operation, resulting in a discharge of heavy water from the primary heat transport system. The valve remained open for approximately 29 minutes. CATHENA is an advanced thermalhydraulic computer code for analysis of postulated loss-of-coolant accidents (LOCA) and transient faults in CANDU nuclear reactors. A full two-fluid (six-equation) representation of the two-phase flow is used. Component models are used to represent pumps, valves, critical discharge, etc., which are necessary to describe the behaviour of the CANDU system under upset conditions. Heat transfer between the fluid and piping walls (or fuel) is modelled using applicable ...

1986-06-09

362

Third order optical nonlinearity of colloidal metal nanoclusters formed by MeV ion implantation  

Energy Technology Data Exchange (ETDEWEB)

We report the results of characterization of nonlinear refractive index of the composite material produced by MeV Ag ion implantation of LiNbO{sub 3} crystal (z-cut). The material after implantation exhibited a linear optical absorption spectrum with the surface plasmon peak near 430 nm attributed to the colloidal silver nanoclusters. Heat treatment of the material at 500 C caused a shift of the absorption peak to 550 nm. The nonlinear refractive index of the sample after heat treatment was measured in the region of the absorption peak with the Z-scan technique using a tunable picosecond laser source (4.5 ps pulse width). The experimental data were compared against the reference sample made of MeV Cu implanted silica with the absorption peak in the same region. The nonlinear index of the Ag implanted LiNbO{sub 3} sample produced at five times less fluence is on average two times greater than that of the ...

1998-05-01

363

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding  

International Nuclear Information System (INIS)

In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be stabilized by choosing the ...

2008-12-05

364

Mechanism for transient-enhanced diffusion in ion-implanted silicon  

International Nuclear Information System (INIS)

High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients ...

1985-03-01

365

Formation of high resistivity regions in [ital p]-type Al[sub 0. 5]In[sub 0. 5]P by ion implantation  

Science.gov (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

1993-12-06

366

Experimental studies on reconstruction of peripheral arteries by high voltage cathode ray irradiated allografts  

International Nuclear Information System (INIS)

The use of cathode ray irradiated arterial allografts on the reconstruction of small peripheral arteries is described. The fate of irradiated arterial allografts implanted subcutaneously in rats was compared histologically with that of allografts which were fresh, frozen or stored in 70% alcohol. Follow-up studies were made of 10 dogs in which irradiated arterial allografts had been implanted in the femoral artery to be evaluated; long term patency by arteriography, gross and histologic changes of the implanted allografts, and the luminal surface of the implanted allografts by scanning electron microscopic studies. For the purpose of antigenic studies, extracts of canine arteries which had been irradiated, frozen or stored in 70% alcohol, were prepared and tested by the following immunological methods: precipitation, Ouchterlony gel diffusion, and passive cutaneous anaphylaxis. From the results obtained ...

1976-01-01

367

Effect of silicon ion implantation upon the structure and corrosion resistance of the surface layer of stainless steel 316L, Vitalium and titanium alloy Ti6Al14V  

International Nuclear Information System (INIS)

Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.

368

Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after ...

1989-03-01

369

Comparative study of the osseointegration of dental implants after different bone augmentation techniques: vascularized femur flap, non-vascularized femur graft and mandibular bone graft  

British Library Electronic Table of Contents (United Kingdom)

Abstract Objectives: The purpose of this study was to evaluate the osseointegration of the dental implants placed into the mandible augmented with different techniques in pigs. Material and methods: Four adult domestic pigs were used. Horizontal augmentation of the mandible was performed in animals by using vascularized femur flap (VFF), non-vascularized femur graft (NVFG) and monocortical mandibular block graft (MG). After 5 months of healing 10 dental implants were placed into each augmented site. The pigs were sacrificed after 3 months of healing. Undecalcified sections were prepared for histomorphometric analysis. Results: Mean bone-implant contact (BIC) values for implants placed into MG, NVFG and VFF were 57.38 11.97%, 76.5 7.88%, 76.53 8.15%, respectively. The BIC values of NVFG and...

2011-01-01

370

Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si  

International Nuclear Information System (INIS)

We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous amorphous layer. For ...

2001-06-01

371

A study of corrosion resistance behavior for W + C dual implanted H13 steel  

International Nuclear Information System (INIS)

The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases ...

372

A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations  

International Nuclear Information System (INIS)

Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the '+n', in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity ...

2004-12-15

373

Hilar cholangiocarcinoma: MR correlation with surgical and histological findings  

International Nuclear Information System (INIS)

Aim: To evaluate magnetic resonance cholangiography (MRC) with high-resolution dynamic gadolinium-enhanced magnetic resonance imaging (MRI) in determining the imaging features of hilar cholangiocarcinoma that relate to tumour extent and influence resectability. Materials and methods: Twenty-six patients that underwent resection were reviewed. Tumour location and extent, lobar atrophy, the degree of portal vein and hepatic artery involvement were recorded. The findings were correlated with surgical and histopathological findings. Results: Biliary assessment was concordant in 14 and discordant in eight of 14 stented and four of 12 non-stented patients. In 63/82 veins and 43/74 arteries results were fully concordant. The mean sensitivity, specificity, positive and negative predictive values (PPV, NPV) in predicting involvement of the main portal vein (MPV) at surgery were 83.3, 100, 100, and 92.5%; of the left main branch of the portal vein (LPV) ...

2010-10-01

374

Successful transcatheter coil embolization of coronary artery to left ventricular fistula associated with absent pulmonary valve with tricuspid atresia in early infancy.  

Science.gov (United States)

Transcatheter coil embolization for coronary artery to left ventricular fistula was successfully performed in a neonate. At 30 weeks' gestation, fetal echocardiography showed a hypoplastic right ventricle with intact ventricular septum, absent pulmonary valve, tricuspid atresia, and marked distension of the right coronary artery. After birth, the neonate had congestive heart failure and the electrocardiogram showed myocardial ischemic changes in the left ventricular area. Aortography showed a dilated right coronary artery arising from the ascending aorta and draining into the left ventricle. Transcatheter coil embolization was carried out on the 9th day after birth. Since the procedure, no myocardial ischemic changes have been detected. Transcatheter coil embolization is a useful therapy for coronary artery fistula associated with myocardial ischemia. PMID:15564713

2004-12-01

375

Special features of control and protection for large saturated steam turbines  

International Nuclear Information System (INIS)

For shut-down safety of the turbine generator (securing of auxiliary power operation after load shut-down and preventing the reaching of overspeed after load shut-down with disturbed turbine governing system) additional measures compared to those for superheated steam turbines are required for turbine generators in plants with pressurized water reactor (PWR) as well as those with boiling water reactor (BWR) . Equipment is described (e.g. overspeed govern or selecting connection, vacuum breaker, bypass valves, intercepting valves) which, depending on the own conditions of the individual turbine generator (e.g. run-up time, vacuum, enclosed energy), may be applied alone or in jointly. (orig.).

376

Liquid level control system of fast reactor secondary cooling system  

International Nuclear Information System (INIS)

Object: To minimize the range of the liquid level variation of the cooling system and reduce the time required for the liquid level control by sealing the gas of a cover gas respiration system which acts upon an evaporator and pump overflow column. Structure: In liquid level control by the cover gas pressure of a high-speed reactor secondary cooling system, upon occurrence of a sudden change in the rate of flow of the recirculated liquid, automatic check valves provided in an evaporator and pump overflow column cover gas respiration system are completely or substantially closed, while at the same time the recirculation cooling medium is sucked up and an automatic check valve provided in the overflow system is closed. (Kamimura, M.).

377

Integrity of feedwater and main steam piping in KWU light water reactor plants  

Energy Technology Data Exchange (ETDEWEB)

New standard catalogs for piping, supports, and valves have been introduced by Kraftwerk Union (KWU) for the first time in its Convoy series of PWR plants. These catalogs, underlying regulatory codes, and newly developed KWU specifications are described. Feedwater and main steam piping systems within the containment, including pipe supports and valves, are used to demonstrate the high quality level of piping technology achieved in the Federal Republic of Germany. Such quality standards ensure the integrity of single components as well as of the entire system, so that, under certain conditions, pipe whip restraints against postulated breaks have become unnecessary. The quality aspects apply basically for both PWR and BWR plants of KWU.

1986-07-01

378

Grafoil applications on-plant  

International Nuclear Information System (INIS)

Presented in this report are the quantitative and qualitative aspects of the more than 5,800 applications of Grafoil on-plant. The subject all-graphite product was originally made by the Union Carbide Corporation. Its utilization in the forms of valve packing, gasketing and sealant tapes for leak repair and prevention on-plant since March 1970 is marked with typical zero-leak results. For all practical purposes, the successful results with Grafoil implementation indicate an unqualified control of leakage problems that began in 1967 with the V-11 and V-12 valves in the primary system of N Reactor. Meaningfully, the accruals of savings with existing and future applications shall continue to be incalculable in personnel exposure, maintenance, and capital. Inherent in the savings are the devised methodology and innovative developments coordinately employed in resolving the leak repair problems.

379

Fast leak in channel H9  

International Nuclear Information System (INIS)

The loss of seal of the H9 channel in vacuum, freeing the entire cross section of the front part, leads to a fast leak that progresses rapidly. The effect of depressurizing the reflector can leads to shutdown of the shutdown rod pumps. The source changer associated with the channel fills completely before the valve closes. All of the leak water remains contained within the source changer containment. After the valves open, cooling of the fuel element is handled by natural convection, requiring a reversal of the flow between the plates. This changeover, which takes place at a relatively low pressure level, could lead to local boiling in the fuel element. Consequently, irreversible transformations cannot be excluded as possibilities for the fuel element and even for the control rod. Subsequently, the can is refilled with heavy water with establishment of the usual pressure levels.

380

Equipment for a central heating system with expansion tank, pressure control, water loss supply, de-aeration, recording and control; Apparaat t.b.v. C.V.-installatie met expansievat, drukregeling, waterverliessuppletie, ontluchting, registratie en controle  

Energy Technology Data Exchange (ETDEWEB)

The very low-pressure expansion tank of the title invention is connected to the water in the central heating installation via a connecting pipe with a pump and valves on one side, and on the other side the tank is connected via a connecting pipe with valve to the tap water mains, so that the supply of water can be regulated automatically. Within the expansion tank contact with the outside air is not possible because of an air/water separating floater. By means of recording and control (also remote) of the contents of the expansion tank, the installation pressure and the quantity of supplied water from the expansion tank and the tap water mains, failures and water damage are prevented. 4 figs.

1995-09-01

381

Development and application of a diaphragm micro-pump with piezoelectric device  

British Library Electronic Table of Contents (United Kingdom)

In this study, a new type of thin, compact, and light weighed diaphragm micro-pump has been successfully developed to actuate liquid by the vibration of a diaphragm. The micro-diaphragm pump with two valves is fabricated in an aluminum case by using highly accurate CNC machine, and the cross-section dimension is 28?mm??5?mm. Both valves and diaphragm are manufactured from PDMS. The amplitude of vibration by a piezoelectric device produces an oscillating flow and alters the chamber volume by the curvature change of a diaphragm. Several experimental set-ups for performance tests in a single micro-diaphragm pump, isothermal flow open system, and a closed liquid cooling system are designed and implemented. The performance of a one-side actuating micro-diaphragm pump is affected by the design ...

2008-01-01

382

Cooling device for impurity removal device in thermonuclear devices  

International Nuclear Information System (INIS)

Purpose: To prevent structure material meltdown upon rupture of cooling pipeways in a impurity remover by preventing the coolants from flowing into the vacuum vessel while continuing the supply of coolants to other portions to be cooled. Constitution: Dual cooling pipeway systems are disposed to the neutralizing plates of the impurity remover. A rupture detector (pressure gage) is mounted to each of the cooling pipeways and flow rate control valves to be opened and closed by the signal from the detector are disposed to the upstream and downstream of the cooling pipeway. In this constitution if the cooling pipes should be ruptured, the coolant supply is stopped to the ruptured system in which the flow rate valve is closed by the signal from the rupture detector. However, since the coolant is kept to be supplied to the other system of the cooling pipeways, meltdown of the neutralizing plates can be prevented. (Kamimura, M.).

1983-08-26

383

A vortex valve ejector combination for fluidic two diode pumps  

International Nuclear Information System (INIS)

Fluidic two diode pumps have been developed for moving highly toxic and for radioactive waste liquors about chemical plant. The pumps have a cylinder into which liquor is initially sucked and then expelled. For situations where no maintenance can be carried out the need has arisen for a fluidic alternator to the solenoid ejector system used on top of the pump cylinder to supply an alternating negative/positive air supply. A fluidic air alternator has been constructed by modifying a small vortex amplifier and inserting an ejector opposite to the throat of the outlet diffuser. The vortex valve ejector is described and performance characteristics are presented. Several developments of the V.V.E. for fluidic pumping and other applications are also reported. (author).

384

Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1#mu#m CMOS devices  

International Nuclear Information System (INIS)

Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been ...

2005-08-01

385

The effects of cosmic radiation on implantable medical devices  

Energy Technology Data Exchange (ETDEWEB)

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A ...

1996-12-31

386

Impurity and clustering effects on defect evolution in ion-implanted Si  

Energy Technology Data Exchange (ETDEWEB)

A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess directly resulting ...

1998-10-01

387

Effects of mesh-assisted carbon plasma immersion ion implantation on the surface properties of insulating silicon carbide ceramics  

International Nuclear Information System (INIS)

Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a ...

2004-03-01

388

Ultrashallow P{sup +}/N junction formation by plasma ion implantation  

Energy Technology Data Exchange (ETDEWEB)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...

2000-12-01

389

Ultrashallow P"+/N junction formation by plasma ion implantation  

International Nuclear Information System (INIS)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application ...

2000-12-01

390

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate  

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

2008-05-19

391

Transient enhanced diffusion in B/sup +/ and P/sup +/ implanted silicon  

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

392

The fraction of substitutional boron in silicon during ion implantation and thermal annealing  

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

1998-05-01

393

The fraction of substitutional boron in silicon during ion implantation and thermal annealing  

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

1998-05-01

394

Study of point defect detectors in Si  

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

1999-05-01

395

Redistribution of implanted dopants after metal-silicide formation  

Science.gov (United States)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

1978-12-01

396

Redistribution of implanted dopants after metal-silicide formation  

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

397

Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

1985-03-01

398

Microstructure, mechanical properties and fracture behavior of #alpha# particle irradiated type 316 stainless steel  

International Nuclear Information System (INIS)

The present work is a research of the effect of helium on the microstructure, mechanical properties and fracture behaviors of a type 316 austenitic steel. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small size specimens, using a cyclotron. Average helium content in a He-deposited region was up to 2000 appm He. In the case of 2000appm He implantation, intergranular fracture was sometimes observed on the helium deposited region after tensile test at room temperature. At elevated temperature test, however, this material showed the transition of fracture mode from transgranular-ductile fracture at 773K to intergranular fracture at 873. In the case of 500 appm He implantation, the transition of fracture mode was recognized at a temperature range of 873K to 973K. (author).

399

Mechanical properties and fracture behavior of #alpha# particle irradiated type 316 stainless steel at high temperature  

International Nuclear Information System (INIS)

The effect of helium on the mechanical properties and fracture behaviors of a type 316 austenitic steel is presented. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small, thin specimens, using a cyclotron accelerator. Average helium content in the He-deposited region was 50 to 2000 appm He. These specimens showed the transition of fracture mode from transgranular to intergranular fracture in elevated temperature tests. The transition temperature decreased with increase in the amount of implanted helium. For example, in the case of 2000 appm and 500 appm He implantation, the transition temperatures were between 773 and 873 K and 873 and 973 K, respectively. (orig.).

400

Long-term changes in graft height after maxillary sinus floor elevation with different grafting materials: radiographic evaluation with a minimum follow-up of 4.5 years  

British Library Electronic Table of Contents (United Kingdom)

Abstract Objective: To compare the vertical dimensional changes with regard to graft height in a long-term follow-up in patients treated with two different grafting materials used in maxillary sinus floor elevation procedures. Material and methods: Twenty consecutive patients were included. One group was grafted with autogenous bone from the mandible (chin area), and the other group was augmented with a 100%b-tricalcium phosphate (b-TCP). During a 4- to 5-year period, in each patient, at least five panoramic radiographs were made. These panoramic radiographs were used for morphometric measurements, at three different locations. The three locations were the first bone to implant contact at the distal side of the second most posterior implant (L1), halfway between this implant and the most p...

2009-01-01

401

Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF_2"+ ion implantation into silicon  

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

2002-01-01

402

Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon  

International Nuclear Information System (INIS)

N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code

2001-12-01

403

Effect of zinc and its form of supply on production and quality of coffee beans  

British Library Electronic Table of Contents (United Kingdom)

Abstract BACKGROUND: In Brazil, the usual forms of zinc (Zn) supply to coffee plants have limitations that compromise the element availability to the plant. This study proposes to test an alternative approach to supplying the nutrient to Coffea arabica L. using trunk implanted zinc tablets. Additionally, the effect of Zn on the production and quality of coffee beans was also evaluated. RESULTS: The highest total coffee bean production was recorded in plants implanted with Zn tablets (TA), while the lowest was recorded in the control treatment, without zinc supply (WZn), reaching a bianual production of 188.2 and 130.1 60-kg bags of processed beans per hectare, respectively. In the treatments where Zn were applied as tablet implantation or as foliage spraying (SZn); the bean size was larger...

2011-01-01

404

Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation  

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

2005-08-01

405

Atomic scale models of Ion implantation and dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

1999-03-01

406

Anti-Infection Dip Suggestions for the Coloplast Titan Inflatable Penile Prosthesis in the Era of the Infection Retardant Coated Implant  

British Library Electronic Table of Contents (United Kingdom)

Abstract Introduction.- Infection is the worst complication seen with inflatable penile prosthesis (IPP). Both the American Medical Systems (AMS) and Coloplast IPP have infection retardant coatings. AMS is coated at the factory with rifampicin and minocycline (InhibiZone). The Coloplast IPP has a hydrophilic coating covalently bonded to its components that will absorb any aqueous solution before implantation and provides increased surface lubricity to decrease bacterial adherence. Aim.- We tested several antibiotic dips comparing zones of inhibition (ZOI) against five commonly infecting bacteria with coated Coloplast implants. Results were compared with those ZOI created with strips of an AMS IPP precoated with InhibiZone. Methods.- Pieces of sterile Coloplast Titan IPP were dipped in (i) ...

2011-01-01

407

The specific heat consumption and the loss mechanisms at the nozzle-group regulation of steam turbines; Zum spezifischen Waermeverbrauch und den Verlustmechanismen bei der Duesengruppenregelung von Dampfturbinen  

Energy Technology Data Exchange (ETDEWEB)

The nozzle-group regulation of steam turbines plays furtheron an important role in the operation of power stations owing to modern, adaptable control-technical valve timing possibilities. New procedures for a choice-connection of different nozzle areas via the control valves as well as the use of valve laps require, however, a differentiated consideration of the loss mechanism in the inlet area of the turbine, in order to be able to assess and minimize its specific heat consumption also at the operational points outside the layout- and calculation-technically fixed guarantee or valve points, respectively. The basic technical-physical stages to this are explained. (orig.) [Deutsch] Die Duesengruppenregelung von Dampfturbinen nimmt nicht zuletzt dank moderner, anpassungsfaehiger leittechnischer Ventilansteuerungsmoeglichkeiten weiterhin eine bedeutende Stellung beim Betrieb von Kraftwerken ein. Neue ...

1995-07-01

408

The safety concept of public gas supply in Germany  

Energy Technology Data Exchange (ETDEWEB)

The risk perception of the public consists of two components: the objectively factual component and the subjectively irrational component. The two strategies adopted by the German gas supply industry are the internal and the external communication strategy. Concepts and measures of accident precaution, registration and analysis of accident data (installation and operating errors, defects on flue systems, pipelines and valves, subsequent installation of gas appliances) are discussed. (R.P.)

1997-09-01

409

The potential of power fluidics for plant protection  

International Nuclear Information System (INIS)

The possibility of using Direct Flow Control (DFC) to avoid catastrophic accidents due to containment breaches in chemical plant is discussed. Recommendations are made for locating fluidic elements, and the effectiveness of simple DFC protection is analysed. More powerful methods of protection are outlined using spin diversion and the complementary properties of fluidic and conventional valves are exploited. (author).

410

Pumping manual/7th edition  

Energy Technology Data Exchange (ETDEWEB)

This book includes the latest developments and covers pump performance, selection and operations, materials, seals and packings, effective fluid characteristics, filtration, piping systems, economics, valves, instrumentation, automatic controls, power transmission equipment, pump and pipeline heating, and more. An extensive data section contains formulas, charts, symbols, nomographs, and standard specification documents.

1984-01-01

411

Pressure surge analyses for conventional and nuclear power plants. Druckstossanalysen fuer konventionelle und nukleare Kraftwerke  

Energy Technology Data Exchange (ETDEWEB)

There is need of pressure surge analyses when valves or pumps are activated or piping systems fail (pipe rupture). Based on actual problems the influences of boundary conditions upon fluid simulation results are discussed. Hints concerning realistic dynamic analyses of piping systems are presented. Some of the simulations results are compared with measurements. (orig.)

1993-09-01

412

Power fluidics and the environment  

International Nuclear Information System (INIS)

This paper reviews power fluidics technology in the nuclear industry giving emphasis also on its potential uses in chemical plants and in flood and irrigation control. This is a technology of controlling process fluids by purely hydrodynamic methods, which should increase system reliability by eliminating valves, pumps and other fluid control devices that are often causes of failure. This review indicates that the hydrodynamics of fluidic components are not satisfactorily understood at present and may be more complex than similar theory in electronics.

413

New safety device announced for nuclear power plants  

International Nuclear Information System (INIS)

An Ottawa-based company, ECS-Power Systems Inc., has successfully completed a series of tests on an innovative device called a hydrodynamic port (HDP), which makes it possible to automatically initiate and maintain emergency cooling of a nuclear reactor core by natural processes, without relying in any way on human intervention, instrumentation, electric power, valves or moving parts of any kind.

414

Method of controlling the coolant level in the cooling system of a nuclear power plant  

International Nuclear Information System (INIS)

Object: To prevent a sudden drop in the level of a coolant in a annular pipe encased within a downcomer pipe. Structure: The coolant levels in annular pipes encased within downcomer pipes are simultaneously measured by level gauges which generate signals representative of coolant levels. The signals are fed to a level control system which will actuate valves to regulate the cover gas pressure in order to average the level differences among the annular pipes in different downcomer pipes. (Kamimura, M.).

415

Gas-diesel dual fuel engine  

Energy Technology Data Exchange (ETDEWEB)

This patent describes a gas-diesel dual fuel engine apparatus having a diesel engine, a diesel fuel supply system including a diesel fuel injection pump, a gaseous fuel supply system including gaseous fuel regulating valve, and a governing and controlling device for governing the speed of the engine and controlling the switchover of the operation of the engine between a diesel fuel mode and a gaseous fuel mode.

1986-08-05

416

Fast cooling of steam turbines. Schnellabkuehlen von Dampfturbinen  

Energy Technology Data Exchange (ETDEWEB)

Due to the fast cooling of steam turbines, the shutdown time during maintenance or when repairing faults and damage can be shortened. This booklet describes various processes for cooling steam turbines. It is recommended that fast cooling should be planned in designing new plants and corresponding arrangements should be provided in the form of pipe connections and valves. (DG).

1987-01-01

417

Device for advancing the base of a stoping unit  

Energy Technology Data Exchange (ETDEWEB)

The purpose of the invention is to increase reliability in the operation of the device for advancing the base of a stoping unit. This is achieved because the device includes alternation hydraulic jacks of advance and control connected by hinges between themselves by the sections of the base and equipped with hydraulic locks, distributors of the hydraulic jacks of advance. In this case the hydraulic locks connected to the hydraulic jacks of control are doubled and connected to the distributors of the neighboring sections through reverse valves.

1980-12-13

418

Investigation of flora and fauna species of Lake Baikal by electron-probe microanalysis  

International Nuclear Information System (INIS)

Complete text of publication follows. Baikal is an ancient unique lake. The sweet water of Baikal is crystal clean; it concentrates oxygen and contains scarce silicon. This feature is provoked very particular interest for scientists and poses some awkward questions concerning the preservation of Baikal's ecosystem. A profound investigation of fish otholiths, animal teeth, sponges, valves of mollusks and diatom algae provides chronological information, possibility to reconstruct the events proceeding in the environment based on variations of their chemical composition. Because these study objects are small-sized, and some of them are micron-size, application of the electron-probe microanalysis turns to be quite productive. The goal of this study is to disclose performance capabilities of this method while investigating the Baikal flora and fauna. Investigations were performed by devices JCXA-733 and JXA-8200 using the electron microscope and x-ray microprobe modes. ...

419

Visual and refractive outcome of one-site phacotrabeculectomy compared with temporal approach phacoemulsification  

UK PubMed Central (United Kingdom)

BackgroundWe aimed to compare visual and refractive outcome following phacoemulsification and intraocular lens implant (IOL) and combined one-site phacotrabeculectomy.MethodWe...Full Text Available

2008-09-01

420

Use of cephalometric analysis for implant placement in a patient with an edentulous maxilla with a severe Class III intermaxillary relationship.  

Science.gov (United States)

A patient with a totally edentulous maxilla and a seVere Class III intermaxillary relationship in the anterior region was treated by implants. In the mandible, there were 10 teeth between the second premolars. The inclination and width of the maxillary anterior residual bone were measured on cephalometric X-ray film obtained before treatment. The results of cephalometric analysis did not support clockwise rotation of the mandible or lingual angling of the maxillary anterior teeth by use of prosthesis to improve the Class III relationship. Ten implants were simultaneously placed in the maxilla. Then, a maxillary temporary full bridge was seated after reduction of the crown lengths of the mandibular anterior teeth. An apically positioned flap operation was performed to eliminate periodontal pockets and to obtain clinically suitable crown lengths of the mandibular anterior teeth. A noncemented, screw-retained maxillary full bridge and a ...

2004-01-01

421

Transient enhanced diffusion in ion-implanted silicon  

Energy Technology Data Exchange (ETDEWEB)

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant ...

1987-03-01

422

The inhibition of staphylococcus epidermidis biofilm formation by vancomycin-modified titanium alloy and implications for the treatment of periprosthetic infection  

UK PubMed Central (United Kingdom)

Peri-prosthetic infections are notoriously difficult to treat as the biomaterial implant is ideal for bacterial adhesion and biofilm formation, resulting in decreased antibiotic sensitivity....Full Text Available

2008-12-01

423

The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon  

International Nuclear Information System (INIS)

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is ...

2005-02-15

424

The development of multiple probe microdialysis sampling in the stomach  

UK PubMed Central (United Kingdom)

A multiple probe approach of implanting microdialysis probes into each separate tissue layer would better represent sampling from the stomach. Presently, microdialysis sampling experiments are...Full Text Available

2008-09-10

425

The association between metal allergy, total hip arthroplasty, and revision  

UK PubMed Central (United Kingdom)

Background and purpose It has been speculated that the prevalence of metal allergy may be higher in patients with implant failure. We compared the prevalence and cause of revisions following...Full Text Available

2009-12-04

426

The Use of Particulate Bone Grafts From the Mandible for Maxillary Sinus Floor Augmentation Before Placement of Surface-Modified Implants: Results From Bone Grafting to Delivery of the Final Fixed Prosthesis  

British Library Electronic Table of Contents (United Kingdom)

PurposeThis prospective study followed 61 patients who were partially dentulous and considered to have insufficient bone volume for routine implant treatment and consequently underwent sinus inlay bone grafting.Patients and MethodsThe patients were treated with maxillary sinus floor augmentation with particulated autogenous bone from the mandibular ramus/corpus. After a healing period, dental implants (n = 180) were installed.ResultsRadiographic examination revealed average residual vertical bone heights of 6.5 mm in the first premolar region, 3.8 mm in the second premolar region, 3.5 mm in the first molar region, and 2.6 mm in the second molar region. The average implant lengths were 12 mm in the first premolar region and 11 mm in the second premolar, first, and second molar regions. All ...

2008-01-01

427

The Oxidation Behavior of CoCrAlY, CoCrAl and Yttrium ...  

Science.gov (United States)

... ADD137758. Title : The Oxidation Behavior of CoCrAlY, CoCrAl and Yttrium-Implanted CoCrAl Alloys Compared and Contrasted,. ...

1987-11-01

428

Temporal Interactions during Paired-Electrode Stimulation in Two Retinal Prosthesis Subjects  

UK PubMed Central (United Kingdom)

Purpose.Since 2002, six blind patients have undergone implantation of an epiretinal 4 × 4 electrode array designed to directly stimulate the remaining cells of the retina...Full Text Available

2011-01-01

429

Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs  

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the ...

2006-10-15

430

Removable Partial Denture in a Cleft Lip and Palate Patient: A Case Report  

UK PubMed Central (United Kingdom)

This clinical report described the oral rehabilitation of a cleft lip and palate patient with removable partial denture. Although implant-supported fixed treatment was presented as part of the optimum...Full Text Available

2008-10-01

431

Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy  

Energy Technology Data Exchange (ETDEWEB)

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly ...

1997-09-01

432

Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy  

International Nuclear Information System (INIS)

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly ...

1996-09-15

433

Prospective randomized controlled trial of an injectable esophageal prosthesis versus a sham procedure for endoscopic treatment of gastroesophageal reflux disease  

UK PubMed Central (United Kingdom)

BackgroundThis study aimed to assess whether endoscopic implantation of an injectable esophageal prosthesis, the Gatekeeper Reflux Repair System (GK), is a safe and effective therapy...Full Text Available

2010-06-01

434

Previous heat treatment inducing different plasma nitriding behaviors in martensitic stainless steels  

International Nuclear Information System (INIS)

In this work we report a study of the induced changes in structure and corrosion behavior of martensitic stainless steels nitrided by plasma immersion ion implantation (PI"3) at different previous heat treatments. The samples were characterized by x-ray diffraction and glancing angle x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and potentiodynamic measurements. Depending on the proportion of retained austenite in the unimplanted material, different phase transformations are obtained at lower and intermediate temperatures of nitrogen implantation. At higher temperatures, the great mobility of the chromium yields CrN segregations like spots in random distribution, and the #alpha#"'-martensite is degraded to#alpha#-Fe (ferrite). The nitrided layer thickness follows a fairly linear relationship with the temperature and a parabolic law with the process time. The corrosion resistance depends strongly on ...

2006-09-01

435

Plasma immersion ion implantation (PIII) of metals; Plasmaimmersionsionenimplantation metallischer Werkstoffe  

Energy Technology Data Exchange (ETDEWEB)

Plasma Immersion Ion Implantation (PIII) is a new hybrid technology for surface treatment of materials based on the principles of plasma nitriding and ion implantation. The equipment and the operation of the system are introduced. As well as providing an alternate method of ion implantation, it is possible to combine energetic ion bombardment with plasma nitriding. Different metal materials and treatment conditions have been studied. The capability of PIII-treatment to improve the properties of a wide range of metals has been proven. Application for forming tools and their industrial test has been successful. (orig.) [Deutsch] Die Plasmaimmersionsimplantation (PIII) ist eine neue Hybridtechnologie zur Behandlung von Werkstoffoberflaechen und basiert auf den Prinzipien des Plasmanitrierens und der Ionenimplantation. Die Anlagentechnik und die Arbeitsweise werden vorgestellt. Verfahrensspezifische Vorteile entstehen durch die ...

1995-01-01

436

Oxygen-concentration dependent enhancement of positive secondary ion emission from silicon  

Energy Technology Data Exchange (ETDEWEB)

The enhancement of positive secondary ion yields of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In/sup +/ were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5x10/sup 15/ to 4x10/sup 16/ O-atoms/cm/sup 2/. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si/sup +/ intensity is proportional to c(O)sup(x) (with x=1.4) in the concentration regime, 1.5<=c(O)<=30 at%. The O/sup +/ intensity shows a similar dependence for c(O)> or approx.20 at.%.

1983-12-15

437

Morbidity using subcutaneous ports and efficacy of vancomycin flushing in cancer.  

UK PubMed Central (United Kingdom)

An evaluation of totally implanted venous access systems inserted in 163 consecutive children with cancer is reported. From 1988 to 1994, 180 subcutaneous ports were inserted in children more than 1...Full Text Available

1995-04-01

438

MRT in differentiation between tumour and implant material in the postoperative sella. Differenzierung zwischen Tumor und Implantatmaterial in der postoperativen Sella mit der MRT  

Energy Technology Data Exchange (ETDEWEB)

MRT criteria have been developed to distinguish between tumour and implant material following examination of 50 patients who had transsphenoidal hypophysectomies for tumours. Judgements were based on the postoperative hormonal status and the operation notes. Following contrast injection of Gd-DTPA and using T[sub 1] weighted spin-echo sequences, implant material appeared as sandwich-like, linear or circular structures. Residual recurrent tumour produced homogenous or non-homogenous aspects without marginal enhancement in 84% of cases. Postoperative displacement of the infundibulum to the opposite side was observed in 73% of patients with tumour remnants. Sensitivity of MRT was 70%, specificity 95%. There was a positive predictive value of 94% and a negative predictive value of 72% with an accuracy of 81%. This provides assistance in differentiating between tumour remnants and implant material. MRT is recommended as a method ...

1993-06-01

439

MRT in differentiation between tumour and implant material in the postoperative sella  

International Nuclear Information System (INIS)

MRT criteria have been developed to distinguish between tumour and implant material following examination of 50 patients who had transsphenoidal hypophysectomies for tumours. Judgements were based on the postoperative hormonal status and the operation notes. Following contrast injection of Gd-DTPA and using T_1 weighted spin-echo sequences, implant material appeared as sandwich-like, linear or circular structures. Residual recurrent tumour produced homogenous or non-homogenous aspects without marginal enhancement in 84% of cases. Postoperative displacement of the infundibulum to the opposite side was observed in 73% of patients with tumour remnants. Sensitivity of MRT was 70%, specificity 95%. There was a positive predictive value of 94% and a negative predictive value of 72% with an accuracy of 81%. This provides assistance in differentiating between tumour remnants and implant material. MRT is recommended as a method of ...

440

Expression of calbindin-D28k and its regulation by estrogen in the human endometrium during the menstrual cycle  

UK PubMed Central (United Kingdom)

Human endometrium resists embryo implantation except during the 'window of receptivity'. A change in endometrial gene expression is required for the development of receptivity. Uterine calbindin-D28k...Full Text Available

441

Experiments on the formation of the A 15-compounds Nb-Sn and Nb-Ge by ion implantation  

International Nuclear Information System (INIS)

Nb_3Sn films (Tsub(c)=17.8 K) were obtained by implantation of Sn"+ ions into Nb films (1500 A thick) after subsequent annealing. The annealing temperature required for the formation of the A15 phase in the implanted films was about 100 K higher than for Nb-Sn sandwich films evaporated at 300 K. The influence of the Sn concentration and of the annealing temperature was studied by measuring the sample resistance. The Nb-Sn compounds formed during the annealing process were analysed by measurements of the Moessbauer-effect of "1"1"9Sn. The implantation method was also used to produce Nb-Ge films with a ratio Ge/Nb approximately 1/3. The Ge-concentration and the temperature of the Nb-target (300-1070 K) were varied. These variations as well as subsequent annealing at 600-850"0C did not lead to superconducting transition temperatures above 8 K. (Auth.).

442

Effects of introducing low-frequency harmonics in the perception of vocoded telephone speech1  

UK PubMed Central (United Kingdom)

Several studies have demonstrated that telephone use presents a challenge for most cochlear implant (CI) users, and this is attributed mainly to the narrow bandwidth (300–3400 Hz) introduced...Full Text Available

2010-09-01

443

Effect of energy and dose on transient-enhanced diffusion and defect microstructure in low energy high dose As{sup +} implanted Si  

Energy Technology Data Exchange (ETDEWEB)

(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of ...

1997-11-01

444

Effect of energy and dose on transient-enhanced diffusion and defect microstructure in low energy high dose As"+ implanted Si  

International Nuclear Information System (INIS)

(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As ...

1996-12-02

445

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon  

Energy Technology Data Exchange (ETDEWEB)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model ...

2004-02-01

446

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon  

International Nuclear Information System (INIS)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. ...

2004-02-01

447

Diffusion mechanism of implanted Be in GaAs  

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of ...

2008-01-15

448

Diagnostic possibilities following implantation of carbon-fibre-reinforced plastic (CFRP) total hip arthroplasty  

International Nuclear Information System (INIS)

Introduction: There are many problems in the radiological diagnosis of aseptic loosening in total hip arthroplasty. Computed tomography (CT) and magnetic resonance tomography (MRT) are not usable for metallic implants (stainless steel, cobalt alloy, titanium alloy). Material and Methods: From April 1993 to December 1993 15 CFRP non-cemented hip prostheses have been implanted. In a prospective clinical study plane radiographs, CT and MRT have been analysed. Results: Three stems were revised (1 femoral fracture, 1 severe thigh pain, 1 aseptic loosening). CFRP are not visible in plane radiographs. There was a complete (two-third of the cases) or nearly complete (one-third of the cases) small sclerotic interface between the prosthesis and the bone, these were apparent in CT and MRT in stable implant cases and did not have any clinical correlations. Discussion: The small sclerotic interface is quite different in comparison to so ...

449

Develop techniques for ion implantation of PLZT [lead-lanthanum-zirconate-titanate] for adaptive optics  

International Nuclear Information System (INIS)

Research was conducted at Pacific Northwest Laboratory to develop high photosensitivity adaptive optical elements utilizing ion implanted lanthanum-doped lead-zirconate-titanate (PLZT). One centimeter square samples were prepared by implanting ferroelectric and anti-ferroelectric PLZT with a variety of species or combinations of species. These included Ne, O, Ni, Ne/Cr, Ne/Al, Ne/Ni, Ne/O, and Ni/O, at a variety of energies and fluences. An indium-tin oxide (ITO) electrode coating was designed to give a balance of high conductivity and optical transmission at near uv to near ir wavelengths. Samples were characterized for photosensitivity; implanted layer thickness, index of refraction, and density; electrode (ITO) conductivity; and in some cases, residual stress curvature. Thin film anti-ferroelectric PLZT was deposited in a preliminary experiment. The structure was amorphous with x-ray diffraction showing the beginnings of ...

450

Corrosion and histopathological studies on anode materials for implantable power sources. [In vivo corrosion studies on anode material  

Science.gov (United States)

The biocompatibility and corrosion resistance of various materials for use as sacrificial anodes in in vivo hybrid fuel cells were studied. Aluminium, zinc, and magnesium alloy AZ31B were studied, and the results are discussed.

1974-01-01

451

Comparison and co-relation of invasive and noninvasive methods of ejection fraction measurement.  

UK PubMed Central (United Kingdom)

BACKGROUND: Accurate estimation of left ventricular ejection fraction (LVEF) has assumed great significance in the era of automatic implantable cardioverter defibrillators (AICDs), and a low EF may...Full Text Available

2007-11-01

452

CoSi_2 nanostructures by writing FIB ion beam synthesis  

International Nuclear Information System (INIS)

A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co_3_6Nd_6_4 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co"+"+ ions in the dose range of 2 . 10"1"6 to 2 . 10"1"7 cm"-"2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 deg. C for 60 min and 1000 deg. C for 30 min in a N_2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the direction and interrupted CoSi_2 pattern in the direction show a clear dependence on the time scale as well as the scanning mode of the irradiation. ...

2006-07-01

453

Circulation, bone scans, and tetracycline labeling in microvascularized and vascular bundle implanted rib grafts  

Energy Technology Data Exchange (ETDEWEB)

The circulation in microvascularized rib grafts has been compared with that in conventional rib grafts and in those augmented by a direct vascular bundle implantation into the bone grafts. A new experimental model has been designed to correlate vascular perfusion, bone scan patterns, tetracycline labeling, and histological findings in these bone grafts. Posterior microvascularized rib grafts were found to have a circulatory pattern identical to that of the normal rib. Failed microvascularized rib grafts were revascularized more slowly than conventional rib grafts. Vascular bundles implanted into rib grafts remained patent and increased the rate of revascularization. The stripping or preservation of periosteum had no observable effects on the rate or pattern of conventional rib graft revascularization. The circulation in rib grafts was accurately reflected in technetium 99 bone scans, as was the patency of the anastomoses of microvascularized ...

1984-11-01

454

Characterization of iron nitrides prepared by spark erosion, plasma nitriding, and plasma immersion ion implantation  

Energy Technology Data Exchange (ETDEWEB)

The effect of the nitrogen uptake in {alpha}-iron upon spark erosion in gaseous and liquid ammonia, plasma nitriding, and plasma immersion ion implantation is studied. The resulting phases and hyperfine parameters, measured by the Moessbauer spectroscopy, are discussed from the point of view of initial conditions of their preparation and subsequent heat and/or mechanical treatment. Spark erosion in the ammonia gas produces fine particles with the dominating ferromagnetic {alpha}-Fe phase (50%). The 20% of specimen volume form {alpha}'-Fe and {alpha}''-Fe{sub 16}N{sub 2} phases. The last 30% occupy the {gamma}'-Fe{sub 4}N, ferro- and paramagnetic {epsilon} phases, and {gamma}-Fe(N). Nitriding in the liquid ammonia allows to incorporate the higher content of nitrogen into {alpha}-iron particles which results in the formation of paramagnetic {epsilon}({zeta})-Fe{sub 2}N phase. This phase also dominates the surface of {alpha}-iron ...

2001-09-01

455

Characterization of iron nitrides prepared by spark erosion, plasma nitriding, and plasma immersion ion implantation  

International Nuclear Information System (INIS)

The effect of the nitrogen uptake in #alpha#-iron upon spark erosion in gaseous and liquid ammonia, plasma nitriding, and plasma immersion ion implantation is studied. The resulting phases and hyperfine parameters, measured by the Moessbauer spectroscopy, are discussed from the point of view of initial conditions of their preparation and subsequent heat and/or mechanical treatment. Spark erosion in the ammonia gas produces fine particles with the dominating ferromagnetic #alpha#-Fe phase (50%). The 20% of specimen volume form #alpha#'-Fe and #alpha#''-Fe_1_6N_2 phases. The last 30% occupy the #gamma#'-Fe_4N, ferro- and paramagnetic #epsilon# phases, and #gamma#-Fe(N). Nitriding in the liquid ammonia allows to incorporate the higher content of nitrogen into #alpha#-iron particles which results in the formation of paramagnetic #epsilon#(#zeta#)-Fe_2N phase. This phase also dominates the surface of #alpha#-iron specimen implanted by nitrogen using ...

2001-09-01

456

Case series of maxillary sinus augmentation with biphasic calcium phosphate: a clinical and radiographic study  

UK PubMed Central (United Kingdom)

PurposeThe aim of this study was to evaluate 3.5 years-cumulative survival rate of implants placed on augmented sinus using Osteon, a bone graft material, and to assess the height...Full Text Available

2011-04-01

457

Case Reports: Fractures of Threaded Cups: Rare Complications of a Well-established Implant  

UK PubMed Central (United Kingdom)

The use of cementless threaded cups in THA is a well-established treatment. Fractures of the cups are rare complications recorded in individual cases with material defects being discussed as the primary...Full Text Available

2009-03-01

458

Boron-enhanced diffusion of boron from ultralow-energy ion implantation  

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during ...

1999-04-01

459

Boron-enhanced diffusion of boron from ultralow-energy ion implantation  

International Nuclear Information System (INIS)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the ...

1999-04-01

460

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena  

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in ...

1996-01-01

461

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena  

International Nuclear Information System (INIS)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 ...

462

Annealing behavior of radiation damages in metal-silicides  

International Nuclear Information System (INIS)

The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).

463

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon  

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

1998-09-18

464

Reduced boron diffusion under interstitial injection in fluorine implanted silicon  

International Nuclear Information System (INIS)

Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine ...

2007-12-01

465

Randomization of heavily damaged regions in annealed low energy Ge{sup +}-implanted (0 0 1)Si  

Energy Technology Data Exchange (ETDEWEB)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

2004-01-15

466

Randomization of heavily damaged regions in annealed low energy Ge"+-implanted (0 0 1)Si  

International Nuclear Information System (INIS)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

2004-01-01

467

Plasma source ion implantation of ammonia into electroplated chromium  

Energy Technology Data Exchange (ETDEWEB)

Ammonia gas (NH{sub 3}) has been used as a nitrogen source for plasma source ion implantation processing of electroplated chromium. No evidence was found of increased hydrogen concentrations in the bulk material, implying that ammonia can be used without risking hydrogen embrittlement. The retained nitrogen dose of 2.1 {times} 10{sup 17} N-at/cm{sup 2} is sufficient to increase the surface hardness of electroplated Cr by 24% and decrease the wear rate by a factor of 4.

1995-02-01

468

Low temperature proton irradiation of amorphous Pd/sub 80/Si/sub 20/ prepared by ion implantation  

Energy Technology Data Exchange (ETDEWEB)

The damage induced by low-temperature proton irradiation in amorphous Pd/sub 80/Si/sub 20/ prepared by ion implantation is studied via electrical resistivity measurements. Our experimental results concerning the initial damage rate and the resistivity saturation are compared to the results obtained for electron and high energy /sup 16/O irradiation of amorphous Pd/sub 80/Si/sub 20/ quenched from the melt. The resistivity curve is analyzed in terms of irradiation-induced point defects.

1984-05-01

469

Implantation of single-impurity Fe and its magnetic coupling in Er studied by TDPAD  

Energy Technology Data Exchange (ETDEWEB)

Single Fe impurities were implanted in an Er single crystal and found to occupy both substitutional and interstitial sites, below a temperature of 200 K. The local susceptibility of Fe on both sites follows a Curie-Weiss law and exhibits a positive local Curie constant, indicating an antiferromagnetic coupling between the Fe and the surrounding Er moments. The corresponding nuclear spin relaxation rates follow a Korringa law as a function of temperature, confirming the dominance of local magnetism and the formation of local moments on each of the sites occupied by Fe.

2004-05-01

470

Implantation of an electronic system for real time neutron graphic images acquisition at the IPEN/CNEN Argonaut reactor  

International Nuclear Information System (INIS)

The aim of this work is the implantation and characterization of a neutron radiography system that uses an electronic device for attainment of images in real time, for its implementation in the nuclear research reactor Argonauta at IEN/CNEN (Nuclear Engineering Institute of the Brazilian Nuclear Energy Commission). The Electronic Imaging System in Real Time is composed by a scintillator screen for neutron, a video camera (CCD), a digital plate and a computer with specific computational programs for digital processing of the images. The System in installed real time is apt to carry through neutron radiography inspections of static and dynamic events of several types of samples. (author)

2004-04-01

471

Free electron laser (FEL) annealing of diamond  

International Nuclear Information System (INIS)

Free Electron Laser (FEL) with wide wavelength tunability has been developed and used for various applications. We report the structural-changes in P-ion-implanted diamond when we can achieve resonant excitation of the vibrations of specific bonds in the lattice of target (P-C) by using FEL. The change of property was analyzed by SIMS and Raman spectroscopy. After 5.8 #mu#m-FEL irradiation, we observed the crystallization of amorphous structure which was induced by P-ion-implantation. These results indicated the FEL annealing of diamond at room temperature. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

1998-09-02

472

Effects of avalanche hole injection in fluorinated SiO[sub 2] MOS capacitors  

Energy Technology Data Exchange (ETDEWEB)

Significantly improved immunity to hot-hole damage of the SiO[sub 2]/Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10[sup 16]/cm[sup 2]). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.

1993-04-01

473

Dextranomer/hyaluronic acid copolymer (Deflux) implants mimicking distal ureteral calculi on CT  

Energy Technology Data Exchange (ETDEWEB)

Periureteral or subtrigonal injection of dextranomer/hyaluronic acid (Dx/HA) copolymer (Deflux, Q-Med, Uppsala, Sweden) is an increasingly common endoscopic treatment for vesicoureteral reflux. We report a confusing radiographic finding of bilateral calcified Dx/HA injections initially thought to represent bilateral distal ureteral stones in a boy who presented with intermittent periumbilical pain. Urologists, radiologists, and emergency room physicians should be aware of the potential for calcification of ureteral implants of Dx/HA, and of the potentially confusing radiographic images that may result. (orig.)

2008-01-15

474

Plasma-based ion implantation and deposition: A review of physics,technology, and applications  

Energy Technology Data Exchange (ETDEWEB)

After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and ...

2005-05-16

475

Defect engineering via ion implantation to control B diffusion in Si  

International Nuclear Information System (INIS)

The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the ...

2009-03-15

476

Characterization and wear tests of steel surfaces implanted with oxygen, aluminum, and carbon dioxide  

Energy Technology Data Exchange (ETDEWEB)

A number of screening tests were performed to determine ion species that effectively reduce wear rates when implanted in four industrial steels. Ball bearing steel 100Cr6 (AISI 52100) showed a wear rate reduction by a factor of 20 when implanted with carbon dioxide to a dose of 5x10{sup 17} cm{sup -2} with a non-mass-separated ion beam and by a factor of {>=}20 when implanted with 5x10{sup 17} cm{sup -2} oxygen ions. For the ferritic and martensite steels X90CrMoV18 (AISI 440B, unhardened and hardened) also a strong wear reduction after implantation of oxygen ions was found. Co-implantation of aluminum and oxygen also reduces wear rates of X90CrMoV18, of S6-5-2 (AISI M2), and of 100Cr6, respectively. For comparison, thin oxide layers were grown in a low-temperature thermal oxidation process. These experiments also yielded reduced wear rates by a factor of 10. The surfaces were ...

1991-07-01

477

Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon  

Energy Technology Data Exchange (ETDEWEB)

The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline ...

2007-08-15

478

Thermal analysis of spent fuel in rehearsal and emergency storage facility (RESF) under station blackout (SBO) in TAPS - 4  

International Nuclear Information System (INIS)

The RESF is utilized for storage of spent fuel under emergency conditions as well as for testing of FM heads. It receives cooling supply from the PHT Pressurizing pumps and after removal of decay heat from the spent fuel it goes to the D2O Storage Tank. The geometry of the RESF system is such that it can not sustain the thermosyphon loop during SBO, due to high frictional forces. To achieve the sustained thermosyphon, modifications in the design were suggested viz., removal of the steam trap and the relief valve above it and replacement by a solenoid valve (SV-16). In the event of SBO, SV-16 will open on 'RESF channel temperature high' signal and connect to FT D2O tank. The tank, being at atmospheric pressure and at lower elevation, will provide higher cooling flow rate through the RESF channel. D2O is periodically removed from the FT D2O tank by operating a Class-II pump intermittently. The analysis was done for the modified RESF system ...

2006-11-13

479

The new BMW 4-cylinder engine in the 318i; Der neue BMW Vierzylindermotor im 318i  

Energy Technology Data Exchange (ETDEWEB)

The BMW four-cylinder two-valve engine was first launched in September 1987 as a 1.8 l engine and was described in detail in [1]. After initial optimisation for model year 94, four years later the engine has undergone a complete technical revision. From model year 98, the four-cylinder two-valve engine with appropriate exhaust emission technology will satisfy the EU3 class for exhaust emissions. (orig.) [Deutsch] Der BMW Vierzylinder-Zweiventilmotor wurde im September 1987 als 1,8-l-Motor erstmals vorgestellt und in [1] ausfuehrlich beschrieben. Nach einer ersten Optimierungsueberarbeitung zum Modelljahr 1994 wurde nun eine grundlegende technische Ueberarbeitung vorgenommen. Der Vierzylindermotor mit Zweiventiltechnik erfuellt als Antriebsaggregat in Verbindung mit einer entsprechenden Abgastechnik bereits ab Modelljahr 1998 die EU 3-Stufe fuer Abgasemissionen. (orig.)

1998-05-01

480

The influence of the layout-admission pressure loss on the control-statical properties of steam turbines; Der Einfluss des Auslegungs-Einstroemdruckverlustes auf die regelstatischen Eigenschaften von Dampfturbinen  

Energy Technology Data Exchange (ETDEWEB)

The complete determination of stroke/throughput curves at steam turbines for arbitrary valve positions usually only follows after the fundamental layout of the control valves, of the possible nozzle segments and of the turbine blading. A general fundamental equation and some design norms based on it are presented which may serve already before a fluidic layout of the turbine in detail as an optimizing predetermination of the properties concerning pressure loss and control statics of the metering components in the admission area. (orig.) [Deutsch] Die vollstaendige Bestimmung der Hub-/Durchsatzkurven an Dampfturbinen fuer beliebige Ventilstellungen erfolgt ueblicherweise erst nach der Grundauslegung der Stellventile, etwaiger Duesensegmente und der Turbinenbeschaufelung. Es werden eine allgemeine Grundgleichung und einige auf ihr aufbauende Entwurfsregeln angegeben, die zu einer optimierenden Vorabbestimmung der druckverlustbezogenen ...

1997-06-01

481

Safety assessment for clearance of radioactive metal wastes from nuclear facility  

Energy Technology Data Exchange (ETDEWEB)

Safety assessments for clearance of H-beam and valves, main radioactive metal wastes in Kori nuclear power plants, were carried out to derivate a decontamination factor for satisfying the dose limits of clearance level (Maximum individual dose: 10 {mu}Sv/y, collective dose: 1 man{center_dot}Sv/y) in Korea. Maximum individual dose and collective dose were evaluated by internal dose conversion factor which based on the concept of effective dose in ICRP publication 60. The results of maximum individual dose and collective dose is 139 {mu}Sv per year and 0.166 man{center_dot}Sv per year about H-beam, and 158 {mu}Sv per year and 0.468 man{center_dot}Sv per year about valves respectively. Demand decontamination factor satisfied with, which is respectively more than 13.9 and 15.8 for satisfying clearance level.

2003-10-01

482

Safety assessment for clearance of radioactive metal wastes from nuclear facility  

International Nuclear Information System (INIS)

Safety assessments for clearance of H-beam and valves, main radioactive metal wastes in Kori nuclear power plants, were carried out to derivate a decontamination factor for satisfying the dose limits of clearance level (Maximum individual dose: 10 #mu#Sv/y, collective dose: 1 man#centre dot#Sv/y) in Korea. Maximum individual dose and collective dose were evaluated by internal dose conversion factor which based on the concept of effective dose in ICRP publication 60. The results of maximum individual dose and collective dose is 139 #mu#Sv per year and 0.166 man#centre dot#Sv per year about H-beam, and 158 #mu#Sv per year and 0.468 man#centre dot#Sv per year about valves respectively. Demand decontamination factor satisfied with, which is respectively more than 13.9 and 15.8 for satisfying clearance level.

2003-10-01

483

Radioisotopic techniques for noninvasive detection of platelet deposition in bovine-tissue mitral-valve prostheses and in vitro quantification of visceral microembolism in dogs  

International Nuclear Information System (INIS)

Platelet deposition on bovine pericardial-tissue mitral-valve prostheses in 11 dogs was observed noninvasively by use of "1"1"1In-labeled platelets and quantified after sacrifice at one (n . 3), 14 (n . 3), and 30 (n . 5) days postimplantation (300-400 microCi of labeled platelets having been injected 24 hours previously). Thrombosis on the sewing ring and pericardial leaflets at one and 14 days and on the leaflets at 30 days was delineated in scintiphotos. In vitro quantification (% injected dose) indicated that the leaflets, sewing ring, and perivalvular tissue retained 0.904% of labeled platelets at one day postimplantation, 0.198% at 14 days, and 0.040% at 30 days. Platelet half-life was reduced to 38 hours at 21 days postimplantation but returned toward the normal (50 hours) with fibrous ingrowth in the sewing ring. Microembolism in lung and kidney, as measured by tissue/blood radioactivity ratio, also was decreased significantly at 30 days. "1"1"1In-labeled ...

484

Modeling the internal combustion engine  

Energy Technology Data Exchange (ETDEWEB)

A flexible and computationally economical model of the internal combustion engine was developed for use on large digital computer systems. It is based on a system of ordinary differential equations for cylinder-averaged properties. The computer program is capable of multicycle calculations, with some parameters varying from cycle to cycle, and has restart capabilities. It can accommodate a broad spectrum of reactants, permits changes in physical properties, and offers a wide selection of alternative modeling functions without any reprogramming. It readily adapts to the amount of information available in a particular case because the model is in fact a hierarchy of five models. The models range from a simple model requiring only thermodynamic properties to a complex model demanding full combustion kinetics, transport properties, and poppet valve flow characteristics. Among its many features the model includes heat transfer, valve timing, ...

1985-03-01

485

Intracardiac Echocardiography: A New Guiding Tool for Transcatheter Aortic Valve Replacement  

British Library Electronic Table of Contents (United Kingdom)

BackgroundEchocardiography has been debated as an adjunct for transcatheter aortic valve replacement (TAVR). The aim of this prospective study was to comparatively evaluate intraprocedural guidance using intracardiac echocardiography (ICE) and transesophageal echocardiography (TEE). MethodsFifty high-risk patients with severe aortic stenosis scheduled for TAVR were randomized to either guidance using ICE (group 1; n = 25) or monitoring using TEE (group 2; n = 25). ResultsIn contrast to TEE, ICE allowed continuous monitoring. The need for probe repositioning during the procedure was much lower in group 1 (0.1 +- 0.3 vs 5.7 +- 0.7 maneuvers, P P = .003). Both coronary ostia were more frequently visualized in group 1 (18 vs 2 cases, P n = 25, r2 = 0.90, P n = 11, P = .012), but ICE did not (m...

2011-01-01

486

Fault detection and fault diagnosis system for engine; Engine no kosho yochi shindan system  

Energy Technology Data Exchange (ETDEWEB)

The fault detection and diagnosis system for gas engines was developed to improve the reliability of cogeneration systems (CGS). Most of existing fault detection systems monitor the trend of each part condition of engines and diagnose faults based on trend change, resulting in slow detection. Although early detection systems are available, those are complex, expensive and poor in flexibility and applicability. Since CGSs combined with gas engines increased to 1/3 of the whole CGS, engine troubles cause possible serious faults. The fault diagnosis system was thus developed to prevent serious faults which can early detect, in particular, abnormal conditions of parts around a combustion chamber such as ignition plug, intake valve and exhaust valve by monitoring exhaust pressure waveforms in an exhaust collector. Since this system can detect progressive occurrence frequency of abnormal conditions and degradation of engine parts, it can transfer ...

1996-03-29

487

Establishment of Database Program for In-service Test Management in Nuclear Power Plants  

International Nuclear Information System (INIS)

In-service Test (IST) of the nuclear power plant is very important to maintain the safety of the plants. The safety features of nuclear power plant are based on the operation of pumps and valves. Therefore, it is an essential basis for the safety of nuclear power plant to keep operational readiness of pumps and valves. Because of the importance of the IST, most of nuclear power plants should designate the IST department and personnel. Because the nuclear power plants of Korea have several types and the designs and operations are different from each other, the methods and experiences are various for the management of the IST program. However, there are no medium to communicate with each other and exchange the tips and information about IST program and education and discussion would be required to apply a consistent code. The nature of the IST Standardization Management Data Base (SMDB) is to exchange opinions and documents about IST program and ...

2010-10-01

488

Development of an efficient, low-NOx domestic gas-range cooktop. Phase 3. Annual technical report, January 1986-December 1986  

Science.gov (United States)

The objective of the program is to develop a domestic cooktop with low-NOx emissions and high efficiency. During the first two phases of the program, three design concepts were developed, and two versions of developmental prototypes using the IR-Jet approach were fabricated and tested. The third phase was initiated to address the design issues of burner turndown and modulation and to conduct the field test of a prototype with one IR-Jet and three conventional burners. Two prototypes containing one IR-Jet and three conventional burners and utilizing blower speed control for air/gas modulation were fabricated. One unit employed a brushless dc motor and the other a 2-pole ac motor. The ac motor prototype was field tested. Field testing showed the need for a mechanical air/gas valve for modulation and for a 1500 Btu/hr simmer setting. A 4-inch-diameter stepped-tile configuration provided input rates from 1500 to 8000 Btu/hr. A manufacturer, Copreci of Spain, started ...

1987-06-01

489

Design, construction and testing of a radon experimental chamber; Diseno, construccion y pruebas de una camara experimental de radon  

Energy Technology Data Exchange (ETDEWEB)

To carry out studies on the radon behavior under controlled and stable conditions it was designed and constructed a system that consists of two parts: a container of mineral rich in Uranium and an experimentation chamber with radon united one to the other one by a step valve. The container of uranium mineral approximately contains 800 gr of uranium with a law of 0.28%; the radon gas emanated by the mineral is contained tightly by the container. When the valve opens up the radon gas it spreads to the radon experimental chamber; this contains 3 accesses that allow to install different types of detectors. The versatility of the system is exemplified with two experiments: 1. With the radon experimental chamber and an associated spectroscopic system, the radon and two of its decay products are identified. 2. The design of the system allows to couple the mineral container to other experimental geometries to demonstrate this fact it was coupled and ...

1991-10-15

490

Combustion system for dual fuel engine  

Energy Technology Data Exchange (ETDEWEB)

This patent describes in an dual gas-liquid fuel four cycle engine having cylinders and wherein each cylinder is operatively connected thereto and each cylinder has a piston, two inlet valves, two exhaust valves and a first liquid fuel injector. It comprises: at least one fuel torch cell operatively connected to at least one cylinder, the torch cell having a torch cell nozzle at one end thereof and the other end having appropriate means to connect the torch cell to a fuel supply, a second fuel injector mounted in the torch cell at a predetermined angle to an axis of the torch cell, the torch cell defining an auto-ignition chamber, the second fuel injector being in operative communication with the auto-ignition chamber by an injector nozzle passageway, the injector nozzle passageway entering the auto-ignition chamber at a predetermined angle relative to the axis, and a torch nozzle passage connecting the auto-ignition chamber with the cylinder ...

1990-10-30

491

Assessment of RELAP5/MOD3/CANDU"+ to Wolsung-1 D_2O leakage event  

International Nuclear Information System (INIS)

In order to evaluate the integrated performance of RELAP5/MOD3/CANDU"+ for CANDU operational transient analysis, we assesed the code to the D_2O leakage event occurred at Wolsung-I, 600 MW(e) CANDU reactor, on Oct. 20, '94. D_2O leakage event was initiated by stuck opening of liquid relief valve No.4 in primary coolant pressure and level control system. Assessment calculation was performed for the plant transients up to 1000 seconds after the initiating event. Calculation results are compared with those measured in primary heat transport system, pressure and inventory control system and boiler secondary system. Comparison with the plant trip log shows that the RELAP5/CANDU"+ is able to simulate the plant transients properly, from which we can conclude that the RELAP5/CANDU"+ is validated for application to CANDU operational transient analysis. CANDU specific models used in the assessment are fuel bundle heat transfer model, decay heat model and MOV(Motor Operated ...

2001-10-01

492

Mapping Strain in Nanocrystalline Nitinol: an X-ray Diffraction Method (SULI paper)  

Energy Technology Data Exchange (ETDEWEB)

Understanding the mechanical properties of biomedical devices is critical in predicting and preventing their failure in the body. Such knowledge is essential, for example, in the design of biomedical stents, which must undergo repeated strain over their ten year lifetimes without breaking. Computational models are used to predict mechanical response of a device, but these models are not complete; there are significant deviations from the predictions, especially when devices are subjected to repeated multi-axial loads. Improving these models requires comparisons with actual measurements of strained nitinol. Local measurements of the full strain tensor can be made using X-ray diffraction techniques, but they are currently limited to materials whose grain size is larger than the X-ray beam size or require several diffraction patterns produced by rotation of the sample. Nitinol stents are nanocrystalline, with grains smaller than any available ...

2006-01-04

493

Long-Term Follow-Up of Percutaneous Balloon Angioplasty in Adult Aortic Coarctation  

International Nuclear Information System (INIS)

Purpose: To assess long-term outcomes following percutaneous transluminal angioplasty (PTA) of congenital aortic coarctation in adults.Methods: Seventeen patients underwent PTA for symptomatic adult coarctation of the aorta. Sixteen patients, with a mean age of 28 years (range 15-60 years), were reviewed at a mean interval after angioplasty of 7.3 years (range 1.5-11 years). Assessment included magnetic resonance imaging (MRI), Doppler echocardiography, and clinical examination. Current clinical measurements were compared with pre- and immediate post-angioplasty measurements.Results: At follow-up 16 patients were alive and well. The patient not included in follow-up had undergone surgical repair and excision of the coarctation segment following PTA. Mean brachial systolic blood pressure for the group decreased from 174 mmHg before angioplasty to 130 mmHg at follow-up (p 0.0001). The mean gradient had fallen significantly from 50.9 to 17.8 at follow-up (p = 0.001). The average number of ...

2000-09-01

494

Reducing the breakdowns and energy consumption in pressure regulating stations by rationalizing the heating of gas  

Energy Technology Data Exchange (ETDEWEB)

Sigma 1) examines ways to reduce the number of breakdowns of pressure-regulating stations and to minimize the energy consumed in warming the gas, 2) determines the optimal gas temperatures upstream from the pressure reduction, and 3) shows the dependence of energy consumption upon the water dewpoint. The method of calculating the optimal input temperature relies on Mollier's diagram. Tables and nomographs for natural gas and water dewpoint at 19/sup 0/F and 580 psi (-7/sup 0/C and 4 MPa) are useful in achieving the desired gas temperatures. Heating the regulators' control valves is important.

1982-04-01

495

Method for limiting scram discharge water  

International Nuclear Information System (INIS)

Object: To limit the discharge amount of reactor water in a primary system at the time of scram to prevent excessive outflow of reactor water outside the system. Structure: A signal from an upper limit position indicator detects the fact that control rods are completely inserted when the reactor is urgently stopped and the detection signal causes a valve in an outflow line of the discharge water from a control rod driving mechanism to be closed to limit the amount of discharge flown into the scram discharge vessel, thus preventing outflow of reactor water in the primary system after the scram has been initiated. (Kamimura, M.).

496

Isolated laevocardia and corrected transposition of the great vessels with total situs inversus  

International Nuclear Information System (INIS)

Isolated laevocardia combined with corrected transposition of the great arteries and complete situs inversus is rare. Due to discordant interrelationships between atria and ventricles and between ventricles and great arteries, both anomalies result in a normal circulation. In the presented case no associated cardiac malformations were present and the 55-year-old woman remained symptom-free for a long time until she developed an acquired valve disease. A systematic approach to chamber localisation in complex morphologic lesions of the heart is reviewed, and the value of CT, which can be applied successfully in older children and adults is demonstrated. (orig.).

497

Improvement of assessment methodology for fluid flow characteristics of passive flow control device  

International Nuclear Information System (INIS)

The objective of this study is to establish evaluation and verification guideline for the APR 1400 and to investigate the thermal-hydraulic characteristics for fluidic device is analyzed using FLUENT. The scope and major results of research are flow characteristics for fluidic device. In this study, three-dimensional numerical model for fluidic device is developed adequately for, and results are compared with experimental data performed by VAPER (VAlve Performance Evaluation test Rig) in KAERI with an aim to verify numerical simulation. In addition, the parametric study has also carried out to investigate the effect of major parameters such as velocity and pressure inside FD chamber.

2002-10-01

498

Hydroelectric and pumped storage plants  

Energy Technology Data Exchange (ETDEWEB)

All power plant engineers face the problem of peak power demands. Pumped storage plants are used to generate peak load power by pumping up water utilizing off-peak energy of hydrothermal and thermonuclear plants. This is the first accessible text/reference to cover hydroelectric power generation with emphasis on engineering to meet peak power demands by means of pumped storge plants, tidal power plants, and low head power generation. Text covers hydrology, mechanical and electrical equipment, accessories such as penstocks and valves, and civil engineering considerations. Contains descriptions of several existing plants. Includes 200 diagrams and 50 photographs.

1989-01-01

499

Hydroelectric and pumped storage plants  

Energy Technology Data Exchange (ETDEWEB)

All power plant engineers face the problem of peak power demands. Pumped storage plants are used to generate peak load power by pumping up water utilizing off-peak energy of hydrothermal and thermonuclear plants. This is a reference to cover hydroelectric power generation with emphasis on engineering to meet peak power demands by means of pumped storage plants, tidal power plants, and low head power generation. Text covers hydrology, mechanical and electrical equipment, accessories such as penstocks and valves, and civil engineering considerations. Contains descriptions of several existing plants. Includes 200 diagrams and 50 photographs.

1988-01-01

500

Error evaluation of the linearized equation of servo valve in hydraulic control systems  

International Nuclear Information System (INIS)

In the procedure of the hydraulic control system analysis, a linearized approximate equation described by the first order term of Taylor's series has been widely used. Such a linearized equation is effective just near the operating point. In this study, the authors estimate computational errors in the process of applying the existing linearized equation stated above. For evaluating the computational accuracy in practical applications of the linearized equations, dynamic behaviors of hydraulic control systems are investigated through simulations with several kinds of representative hydraulic systems and the linearized equations suggested in this study.

2001-11-01