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BACKGROUND AND AIM OF THE STUDY: Abnormal flow conditions across aortic bioprosthetic valves may result in degenerative processes. Thus, it is important to implant biological valve prostheses with velocity profiles similar to those of native valves. The study aim was to compare blood velocity and velocity gradient profiles downstream of stented and stentless aortic valves implanted in pigs, and in native porcine valves. METHODS: Stented valve prostheses (Mitroflow, n = 7) or stentless valve prostheses (Solo, n = 5 or Toronto SPV, n = 7) were implanted into pigs; the native valve was retained in eight animals. After weaning the animals from cardiopulmonary bypass, cardiac magnetic resonance imaging was performed to determine the blood velocities and velocity ...

Science.gov (United States)

A butterfly valve is a type of flow control device, typically used to regulate a fluid flowing. Currently, FEA is often used to predict the safety in the design of valve disc. Also, the study about the affection of butterfly valve's disc to the valve flow characteristics by using CFD has been done by many researchers. Along with the development of computer technique, design and analysis of computer experiments has becoming more and more important in engineering design and optimization. Hereinto Kriging model is one popular analysis approach for the purpose of creating a cheap ``meta-model'' as a surrogate to a computationally expensive simulation model. In this paper, the numerical analysis considered the strength, pressure loss coefficient and weight of valve disc simultaneously is investigated to improve the shape of a traditional butterfly ...

Energy Technology Data Exchange (ETDEWEB)

This guide teaches the basic fundamentals of cavitation to provide the reader with an understanding of what causes cavitation, when it occurs, and the potential problems cavitation can cause to a valve and piping system. The document provides guidelines for understanding how to reduce the cavitation and/or select control valves for a cavitating system. The guide provides a method for predicting the cavitation intensity of control valves, and how the effect of cavitation on a system will vary with valve type, valve function, valve size, operating pressure, duration of operation and details of the piping installation. The guide defines six cavitation limits identifying cavitation intensities ranging from inception to the maximum intensity possible. The intensity of the cavitation at each limit Is described, including a brief discussion of how ...

Energy Technology Data Exchange (ETDEWEB)

As part of the EPRI Motor-Operated Valve (MOV) Performance Prediction Methodology, a System Flow Model (SFM) has been developed to determine the differential pressure (DP) across MOVs as they are stroked in typical power plant systems. Input to the SFM includes valve flow characteristics (such as flow coefficient) and system characteristics (such as pump head/flow curve). The primary output is differential pressure across the valve at each stroke position. The SFM was validated by comparison with test data from the EPRI Flow Loop Test Program. In this study, we calculated DP using SFM and performed DP test for four MOVs. Compared between calculated DP and test DP of four MOV, respectively good agreements are found. (author). 6 refs., 9 figs., 1 tab.

International Nuclear Information System (INIS)

The contribution of platelets and clotting factors in thrombosis on cardiovascular prostheses had been quantified with several tracers. Thrombus formation in vivo could be measured semiquantitatively in animal models and patients with indium-111, Technetium-99m labeled platelets, iodine-123, iodine-131 labeled fibrinogen, and In-111 and Tc-99m labeled antibody to the fibrinogen-receptor on the platelet- membrane, or fibrin. The early studies demonstrated that certain platelet-inhibitors, e.g. sulfinpyrazone, aspirin or aspirin- persantine increased platelet survival time with mechanical valves implanted in the baboon model and patients. Thrombus localization by imaging is possible for large thrombus on thrombogenic surface of prosthesis in the acute phase. The majority of thrombus was found in the sewing ring (Dacron) in the acute phase in both the mechanical and tissue valves. The amount of retained thrombus in both ...

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational ...

Energy Technology Data Exchange (ETDEWEB)

Purpose: In vitro evaluation of possible deflection and heating of present-day prosthetic heart valves, 12 technical and 5 biological, were investigated using a 1.5 Tesla Siemens Vision system. Deflection was measured at the edge of a 1.5 Tesla superconducting magnet. Each valve was then submerged in a vial of a 1/1 electrolyte solution and temperature was measured before and after imaging with a turbo-spin-echo sequence (TR 5200 ms, TE 138 ms, Flip angle 180 C, acquisition time 10.5 minutes, length of echo train 29). MR imaging was performed with phase encoding parallel and perpendicular to the plane of the valves. Results: None of the investigated prosthetic heart valves was deflected. The maximal observed temperature rise was 0.5 C. During MR investigation of the prostheses, artifacts caused by metallic parts were less evident using a spin-echo sequence than a gradient-echo sequence. Conclusions: ...

Medline Plus

X-Plain Heart Valve Replacement Reference Summary Introduction Sometimes people have serious problems with their heart valves. A heart valve repair or ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group ...

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

Energy Technology Data Exchange (ETDEWEB)

This patent describes a solar heater freeze protection valve apparatus comprising in combination: a valve housing; a remote sensor operatively connected to the valve housing from a remote position, the remote sensor including a bulb containing a liquid adapted to compress and expand with the temperature adjacent the bulb; a piston located in the valve body and slidable responsive to expansion and contraction of the liquid in the remote sensor; a first valve element located in the valve housing and attached to the valve piston for movement; a second valve element located in the valve housing and attached to the housing; a first valve seat in the second valve element forming an opening; a second valve seat positioned in a water passageway ...

International Nuclear Information System (INIS)

Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the '+n', in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there ...

International Nuclear Information System (INIS)

MRT criteria have been developed to distinguish between tumour and implant material following examination of 50 patients who had transsphenoidal hypophysectomies for tumours. Judgements were based on the postoperative hormonal status and the operation notes. Following contrast injection of Gd-DTPA and using T_1 weighted spin-echo sequences, implant material appeared as sandwich-like, linear or circular structures. Residual recurrent tumour produced homogenous or non-homogenous aspects without marginal enhancement in 84% of cases. Postoperative displacement of the infundibulum to the opposite side was observed in 73% of patients with tumour remnants. Sensitivity of MRT was 70%, specificity 95%. There was a positive predictive value of 94% and a negative predictive value of 72% with an accuracy of 81%. This provides assistance in differentiating between tumour remnants and implant ...

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

Science.gov (United States)

Vortex Valve Flow Characteristics. Basic Circuit Schematic. System Test Installation. Flight-Weight Design of SITVC System. Staged Vortex Valve SITVC ...

Energy Technology Data Exchange (ETDEWEB)

This paper studies on the modelling of a butterfly-type control valve actuating by an on-off pneumatic solenoid valve. The mathematical model is composed of nonlinear differential equations three parts: (i) a solenoid valve, (ii) a pneumatic cylinder, (iii) a rotary-type butterfly valve. The flow characteristics of the butterfly control valve is analysed by a computer simulator, then its simple transfer function is identified from the step responses.

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and ...

Energy Technology Data Exchange (ETDEWEB)

The advent of carbon nanotubes, which are graphite layers convoluted in cylinders several nanometers in diameter and several micrometers in length, as well as the experiments on implanting metal atoms in such tubes open the way to producing nanoconductors and other materials with unique properties. For theorists, the basic challenge is interpreting and predicting the structure and properties of these systems. The linearized augmented-plane-wave method (LAPW) is one of the most accurate methods in the theory of the electronic structure of solids. A generalization of this method for quasi-two-dimensional systems, surface electronic states, and layered crystals is known. The LAPW theory for quasi-unidimensional systems, which exhibit translational symmetry in one direction, has been absent thus far. In this paper, the authors suggest a version of such a theory and use this method to calculate the electronic structure of carbyne (a linear chain of ...

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens of the normalized and tempered fully martensitic steel DIN 1.4914 were helium implanted up to 340 appm within the temperature range 300-720/sup 0/C using a 104 MeV alpha particle beam. The high He/damage ratio of 1850 appm He/dpa allowed to determine the effect of helium on material properties. After irradiation tensile strength and ductility were investigated mainly at test temperatures equal to the irradiation temperatures. While short time irradiations with helium contents up to 100 appm have shown no visible effect on the tensile behaviour at all temperatures investigated, long time irradiations reduced the material strength at irradiation temperatures above about 440/sup 0/C. This irradiation induced softening obscured the predicted minor hardening effect of the observed He-bubbles completely and increases with irradiation time and temperature. The fracture mode of helium-implanted and control ...

CERN Document Server

Control of Phosphorus Transient Enhanced Diffusion using Co-implantation

International Nuclear Information System (INIS)

This paper presents the application of hydraulic network analysis to evaluate the performance of butterfly valves in nuclear power plant applications. Required actuation torque for butterfly valves in high-flow applications is often dictated by peak dynamic torque. The peak dynamic torque, which occurs at some intermediate disc position, requires accurate evaluation of valve flow rate and pressure drop throughout the valve stroke. Valve flow rate and pressure drop are significantly affected by the valve flow characteristics and the hydraulic system characteristics, such as pumping capability, piping resistances, single and parallel flow paths, system hydrostatic pressure, and the location of the motor-operated valve (MOV) within the system. A hydraulic network analysis methodology that addresses the effect of these parameters on the MOV ...

Energy Technology Data Exchange (ETDEWEB)

The influence of bowl offset on motored mean flow and turbulence in a direct injection diesel engine has been examined with the aid of a multi-dimensional flow code. Results are presented for three piston geometries. The bowl geometry of each piston was the same, while the offset between the bowl and the cylinder axis was varied from 0.0 to 9.6% of the bore. The swirl ratio at intake valve closing was also varied from 2.60 to 4.27. It was found that the angular momentum of the air at TDC was decreased by less than 8% when the bowl was offset. Nevertheless, the mean (squish and swirl) flows were strongly affected by the offset. In addition, the distribution of turbulent kinetic energy (predicted by the /delta/-e model) was modified. Moderate increases (10% or less) in mass averaged turbulence intensity at TDC with offset were observed.

CERN Document Server

Industrial-process control valves Part2 : Flow capacity Section Four : Inherent flow characteristics and rangeability

Energy Technology Data Exchange (ETDEWEB)

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous ...

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

International Nuclear Information System (INIS)

... bwr type reactors closures fluidic control devices operation performance pwr

International Nuclear Information System (INIS)

One of the characteristic safety features of a pool type research reactor is a safety flapper valve. The valve enables natural convection cooling mechanism in one of the following events. (a) Opening flapper valve promote decay heat removal following reactor's shutdown. (b) Also the valve is gravity driven. There is a possibility that the valve fails to open when it is required to do so. In the present paper the cooling characteristics of the core are analyzed for this event. A steady state study was performed for 5 MW power and 18 FE following a reactor shutdown. It is shown that enough margin exists to assure adequate reactor core cooling should the safety flapper valve fails to open. (authors)

Energy Technology Data Exchange (ETDEWEB)

An Experimental study was performed to investigate flow characteristic of multi-stage expansion valve applied with inverter heat pump. Multi-stage expansion consists of parallel valve which is controlled on/off type of solenoid valve. Expansion valve open one solenoid the other closed in low frequency region and open two solenoid valve in high frequency region. In rated frequency region always open one solenoid valve and control period and on-off time ratio for the other solenoid valve. Flow characteristics of a orifice expansion was measured as a function of orifice diameter and operating conditions. As a results multi-stage expansion device can control a stable flow with period and on-off time ratio. (author). 4 refs., 7 figs., 1 tab.

Energy Technology Data Exchange (ETDEWEB)

The control valve for a large steam turbine must be operated linearly to be run by an automatic control system in a power plant. It is, however, found that the flow increase is much greater for a given valve position change near the closed end of travel than it is near the open end. Accordingly, the desired linearization will be achieved if the valve is opened less near the closed end of travel and greater near the open end. The previous way for linearization was to utilize the cams, which is called the mechanical hydraulic control (MHC). The MHC was afterward improved by producing the nonlinear electric compensation to the nonlinear system of control valves, viz. the electro hydraulic control (EHC)

Science.gov (United States)

PMID:4317460

Energy Technology Data Exchange (ETDEWEB)

Liquid pipeline codes generally stipulate placement of block valves along liquid transmission pipelines such as on each side of major river crossings where environmental hazards could cause or are foreseen to potentially cause serious consequences. Codes, however, do not stipulate any requirement for block valve spacing for low vapour pressure petroleum transportation, nor for remote pipeline valve operations to reduce spills. A review of pipeline codes for valve requirement and spill limitation in high consequence areas is thus presented along with a criteria for an acceptable spill volume that could be caused by pipeline leak/full rupture. A technique for deciding economically and technically effective pipeline block valve automation for remote operation to reduce oil spilled and control of hazards is also provided. In this review, industry practice is highlighted and application ...

British Library Electronic Table of Contents (United Kingdom)

With an ageing population the demand for cheap, efficient implants is ever increasing. Laser surface treatment offers a unique means of varying biomimetic properties to determine generic parameters to predict cell responses. This paper details how a KrF excimer laser can be employed for both laser-induced patterning and whole area irradiative processing to modulate the wettability characteristics and osteoblast cell response following 24h and 4 day incubation. Through white light interferometry (WLI) it was found that the surface roughness had considerably increased by up to 1.5mm for the laser-induced patterned samples and remained somewhat constant at around 0.1mm for the whole area irradiative processed samples. A sessile drop device determined that the wettability characteristics diffe...

British Library Electronic Table of Contents (United Kingdom)

Abstract Introduction. Spinal cord stimulation (SCS) is an effective procedure for the treatment of neuropathic extremity pain, with success rates approaching 70%. However, mechanical failures, including breakage and migration, can significantly limit the long-term effectiveness of SCS. A systematic analysis of surgical techniques was undertaken by a consensus group, coupled with extensive in vivo and in vitro biomechanical testing of system components. Methods. A computer model based on morphometric data was used to predict movement in a standard SCS system between an anchored lead and pulse generator placed in various locations. These displacements were then used to determine a realistic range of forces exerted on components of the SCS system. Laboratory fixtures were constructed to subj...

Energy Technology Data Exchange (ETDEWEB)

Swirling flow in a direct injection diesel engine was measured by a laser doppler velocimeter. Piston cavity diameter and top clearance volume were changed as factors affecting swirling flow to study the distribution of swirling flow speed. When using the same intake port and changing the opening ratio of piston cavity, the distribution of swirling flow speed was different by the cavity during intake process but these agree just after opening intake valve and then become again different by cavity. When increasing top clearance and decreasing compression ratio, the axial symmetry of flow during commpression process increases. When changing piston cavity, and also when changing intake port, the mean swirling ratio in inside and outside areas of combustion chamber has common tendency to increase and decrease respectively. The mean swirling flow in the combustion chamber may be capable to be predicted by devising a model which can describe this ...

Energy Technology Data Exchange (ETDEWEB)

The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at substrate temperatures of 50 ...

Science.gov (United States)

Limestone slurry needs to move efficiently through a complex process, meaning that selecting the right pumps and valves is critical. The article discusses factors to consider in selecting pumps and values for flue gas desulfurization process in coal-fired power plants. 2 photos.

UK PubMed Central (United Kingdom)

Blunt chest-wall trauma is common; however, resultant tricuspid valve rupture is rare and can be subtle in its presentation. Transthoracic echocardiography plays a key role in diagnosis.Herein,...Full Text Available

International Nuclear Information System (INIS)

... 2432 v. 43(1) SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS

International Nuclear Information System (INIS)

Comparison of plasma density increase was carried out in outer and inner channels of the interferometer in T-11M tokamak. There were two cases of gas puffing: by outer valve or upper one. Amplitude of difference of the plasma density increase consisted of 9% near the outer valve. Perturbation of the electric potential e?1/Te can have similar value. This perturbation can lead to appearance of the additional losses.

International Nuclear Information System (INIS)

Response of control valves plays an important role in the dynamics of the flow system as a whole. Knowledge of its transfer function would facilitate analysis of the behaviour of the system. This paper presents the application of Levy's complex curve fitting method for determination of the transfer function of control valves used in Liquid Zone Control System of 540 MWe PHWR. (author)

International Nuclear Information System (INIS)

Uranium Hexafluoride is a material used in the various processes which comprise the front end of the nuclear fuel cycle (conversion, enrichment and fuel fabrication). Confinement of UF6 is a very important safety requirement since this material is highly reactive and presents safety hazards to humans. The present paper discusses the safety relevant aspects of accidental releases of UF6 inside process confinement buildings. Postulated accidental scenarios are analyzed and their consequences evaluated. Implant releases rates are estimated using computer code predictions. A time dependent homogeneous compartment model is used to predict concentrations of UF6, hydrogen fluoride and uranyl fluoride inside a confinement building, as well as to evaluate source terms released to the atmosphere. These source terms can be used as input to atmospheric dispersion models to evaluate consequences to the environment. The results can also ...

Science.gov (United States)

PMID:17729657

International Nuclear Information System (INIS)

The control valve for a large steam turbine must be operated linearly to be run by an automatic control system in a power plant. It is, however, found that the flow increase is much greater for a given valve position change near the closed end of travel than it is near the open end. Accordingly, the desired linearization will be achieved if the valve is opened less near the closed end of travel and greater near the open end. The previous way for linearization was to utilize the cams, which is called the mechanical hydraulic control (MHC). The MHC was afterward improved by producing the nonlinear electric compensation to the nonlinear system of control valves, viz. the electro hydraulic control (EHC). This paper addresses the principle of linearization.

UK PubMed Central (United Kingdom)

BackgroundThe successful use of zirconia ceramics in orthopedic surgery led to a demand for dental zirconium-based implant systems. Because of its excellent biomechanical characteristics,...Full Text Available

UK PubMed Central (United Kingdom)

This article describes issues concerning music perception with cochlear implants, discusses why music perception is usually poor in cochlear implant users, reviews relevant data, and describes...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundTitanium and titanium alloys are widely used for fabrication of dental implants. Since the material composition and the surface topography of a biomaterial play a fundamental...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundOsseointegration is crucial for the long-term success of dental implants and depends on the tissue reaction at the tissue-implant interface. Mechanical properties and biocompatibility...Full Text Available

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Science.gov (United States)

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KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

International Nuclear Information System (INIS)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si"2"+, 1.0-MeV He"+ and 340-keV H"+) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. ...

Energy Technology Data Exchange (ETDEWEB)

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the ...

Energy Technology Data Exchange (ETDEWEB)

High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.

Science.gov (United States)

... The other standards in this group deal with heat exchangers, insulation, marking, valves, hydraulic cleanliness, storage of LPG, and centrifugal fire ...

Energy Technology Data Exchange (ETDEWEB)

In the design of natural gas compressor stations, a check valve is a critical element which is commonly placed on the discharge side of the compressor to prevent reverse flow that can cause serious damage to the compressor itself and other components such as seals and bearings. One of the selection criteria of the check valve for this particular application is the valve flow characteristics in steady flow, and its dynamic characteristics in unsteady flow operation. With regards to steady flow valve characteristics, current models for the determination of the check valve open angle vs. mean flow velocity are based on semi-empirical data obtained from water tests, which were found to deviate from measurements in compressible flows. This paper presents results of steady compressible flow testing of an NPS 4 swing type check valve in air. Mean flow velocities vs. ...

International Nuclear Information System (INIS)

Purpose: To secure the reactor operation safety by the provision of a fluid pressure detecting section for control rod driving fluid and a control rod interlock at the midway of the flow pass for supplying driving fluid to the control rod drives. Constitution: Between a driving line and a direction control valve are provided a pressure detecting portion, an alarm generating device, and a control rod inhibition interlock. The driving fluid from a driving fluid source is discharged by way of a pump and a manual valve into the reactor in which the control rods and reactor fuels are contained. In addition, when the direction control valve is switched and the control rods are inserted and extracted by the control rod drives, the pressure in the driving line is always detected by the pressure detection section, whereby if abnormal pressure is resulted, the alarm generating device is actuated to warn the abnormality and the ...

Science.gov (United States)

Mar 1, 2011... properties to a complex model demanding full combustion kinetics, transport properties, and poppet valve flow characteristics. ...

Energy Technology Data Exchange (ETDEWEB)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

International Nuclear Information System (INIS)

Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and ...

International Nuclear Information System (INIS)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

International Nuclear Information System (INIS)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...

Energy Technology Data Exchange (ETDEWEB)

This paper deals with the heat transfer characteristics of horizontal steam generators, particularly under natural circulation (decay heat removal) conditions on the primary side. Special emphasis is on the inherent features of horizontal steam generator behaviour. A mathematical model of the horizontal steam generator primary side is developed and qualitative results are obtained analytically. A computer code, called HSG, is developed to solve the model numerically, and its predictions are compared with experimental data. The code is employed to obtain for VVER 440 steam generators quantitative results concerning the dependence of primary-to-secondary heat transfer efficiency on the primary side flow rate, temperature and secondary level. It turns out that the depletion of the secondary inventory leads to an inherent limitation of the decay energy removal in VVER steam generators. The limitation arises as a consequence of the steam generator tube bundle geometry. ...

Energy Technology Data Exchange (ETDEWEB)

This paper deals with the control of an electromechanical valves engine. The control uses neural networks in order to build a non-linear model of engine filing which depends on the driven inlets. The aim is to build this real-time model and to integrate this model to a control system which performs an iterative inversion. (J.S.)

International Nuclear Information System (INIS)

Purpose: To improve the reliability of control rod drive mechanisms for use in BWR type reactors by preventing erroneous insertion of control rods caused by the increase in the coolant pressure. Constitution: A pressure-releaf valve mechanism is provided which opens its valve when a detected difference between the pressure of the coolants flowing through coolant pipeways and the reactor pressure exceeds a predetermined pressure difference. If the coolant pressure increases abnormally, coolants in the coolant pipeway are released to lower the pressure. (Aizawa, K.).

International Nuclear Information System (INIS)

In General Electric's design of the Simplified Boiling Water Reactor (SBWR), The depressurization valves (DPV) are installed in the reactor pressure boundary: four are connected to the reactor vessel by means of nozzles, and two more are located on the main steam pipes (one DPV for each line), which act during particular transients and/or loss of coolant accidents (LOCA), consequently providing the reactor vessel with a safe quick depressurization system. Once the vessel is de pressurised, the passive gravity-driven cooling system (GDCS) starts to operate, permitting the injection of water required for continuous core cooling. DPVs are leak tight, with welded flaps, actuated by a [striker[hammer***] which is activated by an explosive mixture. The dynamic loads that open these valves include, in addition to those produced by steam (typical in any thermodynamic transient with open/close valves), other important loads that are ...

UK PubMed Central (United Kingdom)

BackgroundModern metal-on-metal hip resurfacing implants are being increasingly used for young and active patients, although the long-term outcome and failure mechanisms of these...Full Text Available

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant ...

UK PubMed Central (United Kingdom)

Experienced users of the Clarion cochlear implant were tested acutely with the HiResolution (HiRes) and HiRes Fidelity120 (F120) processing strategies. Three psychophysically-based tests were...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundThe aim of this study is to examine how clinicians and patients negotiate clinical need and treatment decisions within a context of finite resources. Dental implant treatment...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV ...

UK PubMed Central (United Kingdom)

The effect of feedback and materials on perceptual learning was examined in normal hearing listeners exposed to cochlear implant simulations. Generalization was most robust when feedback paired...Full Text Available

UK PubMed Central (United Kingdom)

The temporal fine structure (TFS) of sound contributes significantly to the perception of music and speech in noise. The evaluation of new strategies to improve TFS delivery in cochlear implants (CIs)...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Energy Technology Data Exchange (ETDEWEB)

The theoretical alignment limit for focused ion beam (FIB) implantation was deduced from the calculated resolution for the detection of an alignment mark. The alignment resolution varies with the signal to noise ratio and there is an optimum current which gives the best resolution. The alignment resolution epsilon/sub sigma/ is approximately 0.006 ..mu..m for a 160 keV Si/sup ++/ beam from our FIB implanter. The measured alignment error is approximately 0.06 ..mu..m and the main reason of this discrepancy is vibration. The ultimate limit on the alignment error can be reached through improvements in the implanter system.

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

Energy Technology Data Exchange (ETDEWEB)

One of the effective methods of deep modification of the surface of steels and alloys is the combination of ion implantation and plasma nitriding. In this work, the long-range effect is demonstrated in the case of combination of the effect of high- and low-energy ions of nitrogen on a martensitic steel for each ion implantation is usually not effective, and a titanium alloy used widely in industry.

International Nuclear Information System (INIS)

The aim of this paper is to investigate the fluid dynamic behaviour of a commercial hydraulic proportional valve in order to evaluate and justify its global performances and, in particular, to analyze the effects of some additional design features on the reduction of the force required to maintain the valve open. The proposed analysis has been performed by applying the commercial computational fluid dynamics (CFD) code, Fluent, to the solution of the three dimensional turbulent flow field through a circumferential sector of the entire valve for different spool strokes. The reliability of the employed modelization is demonstrated by the comparison between the computed flow rate curve and the corresponding experimental data provided by the manufacturer. With regard to the metering edge design, it is shown that the cylindrical hole provided on the top of the hemi-spherical notch to improve metering at small ...

British Library Electronic Table of Contents (United Kingdom)

The major bottleneck for popularization and utilization of the conventional mechanical valve pulse combustors is the self-priming mode of gas supply. An aerodynamic valve (as against mechanical valve) self-excited pulse combustor of the Helmholtz-type with continuous supply of gas and air was designed and a mathematical model was established in this paper. The theoretical model employed well-stirred reactor model and a single step Arrhenius chemistry, and took those factors which might affect the combustion stability into account. The factors include the variation of the mass rate of the reactants affected by the pressure in the combustion chamber, the convective and radiation heat loss in the combustion chamber, and the heat transfer and wall friction in the tailpipe. The effect of wall t...

International Nuclear Information System (INIS)

Purpose: To stably control the reactor water level so as not to cause excess water feeding in a BWR type reactor. Constitution: A flow control valve is disposed to the exit of a feedwater pump for a nuclear reactor and the valve is controlled by a flow regulator to maintain the water level constant in the reactor. A signal from a water level controller is inputted to the flow regulator to thereby control the flow rate control valve. In this case, the flow regulator remains in a saturated state just after the starting of the feedwater pump, in which the pump flowrate is at 100% to result in an excess water feeding condition. In view of the above, a feedback circuit is provided to the flow regulator so that the saturated state is eliminated and the water feeding can be controlled directly from the water level controller. (Kamimura, M.).

International Nuclear Information System (INIS)

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

Energy Technology Data Exchange (ETDEWEB)

P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

Energy Technology Data Exchange (ETDEWEB)

A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows ...

International Nuclear Information System (INIS)

Titanium and its alloy Ti6Al4V enjoy widespread use in various biomedical applications because of favourable local tissue response, higher corrosion resistance and fatigue strength than the stainless steels and cobalt-chromium alloy previously used. The study reported in this paper aims to optimize the conditions of nitrogen ion implantation on commercially pure titanium and to correlate the implantation parameters to the corrosion resistance. X-ray photoelectron spectroscopy was used to analyse surface concentration and the implantation processes. An improvement in the electrochemical behaviour of the passive film was shown to occur with nitrogen ion implantation on titanium, in simulated body fluids. (UK).

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

International Nuclear Information System (INIS)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation ...

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

Energy Technology Data Exchange (ETDEWEB)

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Twenty-four male weanling rats were fed either copper-adequate or -deficient diets until 9 or 11 weeks of age. Deficient rat hearts had increased mitochondria: myofibril compared to adequate rats. Eleven week old deficient rat hearts had decreased mitochondria: myofibril as the hearts increased in weight, but the larger hearts had greater myofibril volume densities. Cardiac mitochondria of deficient rats appeared vacuolated with fragmented cristae and translucent matrix. Valves from copper deficient rats appeared to have less connective tissue and were fragmented in areas. For deficient rats, heart:body weights of 9 wk old rats were negatively correlated with bicuspid valve pathology scores, whereas tricuspid valve scores from 11 wk old rats were negatively correlated with myofibril volume densities. These data suggest that the enlargement of the copper-deficient rat heart is due to: larger (1) mitochondria and (2) ...

UK PubMed Central (United Kingdom)

BackgroundThoracic injuries play an important role in major trauma patients due to their high incidence and critical relevance. A serious consequence of thoracic trauma is pneumothorax,...Full Text Available

International Nuclear Information System (INIS)

Purpose: To enable safety reactor shut down upon occurrence of an abnormal excess pressure in a hydraulic control unit. Constitution: The actuation pressure for a pressure switch that generates a scram signal is set lower than the release pressure set to a pressure release valve. Thus, if the pressure of nitrogen gas in a nitrogen container increases such as upon exposure of the hydraulic control unit to a high temperature, the pressure switch is actuated at first to generate the scram signal and a scram valve is opened to supply water at high pressure to control rod drives under the driving force of the nitrogen gas at high pressure to rapidly insert the control element into the reactor and shut down it. If the pressure of the nitrogen gas still increases after the scram, the pressure release valve is opened to release the nitrogen gas at high temperature to the atmosphere. Since the scram is attained before the actuation ...

UK PubMed Central (United Kingdom)

Libman-Sacks endocarditis is a well-known and rather common cardiac manifestation of systemic lupus erythematosus. Transesophageal and transthoracic echocardiography are the definitive imaging methods...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundLung volume reduction surgery is effective at improving lung function, quality of life, and mortality in carefully selected individuals with advanced emphysema. Recently,...Full Text Available

UK PubMed Central (United Kingdom)

We report a case of chylopericardium after ascending aorta and aortic valve replacement, which presented as late tamponade. We discuss the various treatment options in this rare condition which can...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Full text: Magnetic multilayer materials are becoming technologically important as they provide a more efficient means of magnetic reading and storage through utilisation of their giant magnetoresistance and oscillatory magnetic coupling. This study presents preliminary tight-binding calculations with a view of developing a consistent tight-binding model of `spin valve` Fe-Cu-Fe tri-layer materials. Further work involves using a self-consistent tight-binding approach to obtain a more accurate picture of this system and a better understanding of surface effects at the Fe-Cu interface 1 fig., 4 refs.

Energy Technology Data Exchange (ETDEWEB)

Westinghouse Electric Germany GmbH has developed fluid dynamic models for medium-actuated armatures using the thermal hydraulic code RELAP5 in order to reach a more realistic description of the armature behavior including fluid-structure interactions in case of transient flow conditions in piping systems. The contribution is concerned with the modeling of damped check valves. The model allows the description of the behavior during opening and closure of a check armature. The calculated results show good agreement with the available measured data.

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of ...

International Nuclear Information System (INIS)

Host matrices for actinide immobilisation will undergo the formation of large helium quantities due to alpha decay. Helium diffusion rate has to be known in order to predict the long-term behaviour of the material, and particularly, the influence of helium accumulation on mechanical properties. A nuclear reaction analysis method, namely the "3He(d, p)"4He reaction, has been used to analyse the evolution of "3He profiles after ion implantations at 1 and 3 MeV in two materials, monoclinic ZrO_2 (as a test material) and Ca_9Nd(PO_4)_5(SiO_4)F_1_._5(OH)_0_._5 britholite (envisaged for Am and Pu long-term storage). Two data processing methods are used: the classical excitation curve (proton yields versus deuteron energy) and second, the proton energy spectrum for a given deuteron energy. The characteristics of the "3He profiles (depth, width) obtained by both methods are compared to SRIM estimations. Their evolution during subsequent annealings ...

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which ...

British Library Electronic Table of Contents (United Kingdom)

Downregulation of anterior pituitary GnRH-receptors by application of a slow release GnRH-implant offers an effective and reversible alternative to surgical castration of the male dog. Aim of the present study was to test the efficacy and the underlying mechanisms of a new non-biodegradable controlled-release device implant (Gonazon, Intervet, containing 18.5mg of the GnRH-agonist Azagly-Nafarelin). Eight male beagle dogs were implanted s.c. at the para-umbilical region. In four dogs implant removal was after 180 days (group 1), in the other four dogs after 365 days (group 2). Eleven weeks after implantation availability of LH was reduced (p<0.0001) by 70%. After an initial increase lasting for about 4 days, testosterone (T) and estradiol (E2) concentrations decreased (p<0.0001) to basal l...

International Nuclear Information System (INIS)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of ...

Energy Technology Data Exchange (ETDEWEB)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion ...

Science.gov (United States)

Bone matrix gelatin, prepared by sequential chemical treatment including decalcification with 0.6 N hydrochloric acid [9], was used as an alloimplant for the treatment of benign bone tumours, tumorous conditions of bone, acetabular dysplasia, delayed union, traumatic bone defects and other disorders. The bone matrix gelatin implanted into bone defects was incorporated successfully in 98% of implantations, excluding cases of infection, tumour recurrence and recurrence of tumorous conditions. The material was also implanted into ten bone sites as an onlay but in five it was resorbed without new bone formation. The incorporation of the bone matrix gelatin into the recipient bed was completed from 6 to 33 months (average 14.9 months) after implantation. Wound infection complicated 5 of 165 implantations (3%) in previously uninfected sites. Low grade fever persisting after the tenth ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work ...

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation ...

International Nuclear Information System (INIS)

The penetration depth and concentration distribution for vanadium ions with low energy implanted into the dry peanut seeds is determined by scanning electron microscope and X-ray energy dispersion spectrometer. The results show that the depth-concentration distribution is a Gaussian distribution with a long tail and the maximum penetration depth is about 13.6 #mu#m for V"+ with 200 keV in cotyledon of the peanut. The experimental result of the implanted V"+ range in the peanut seeds is compared with the calculating value of the TRIM95

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

International Nuclear Information System (INIS)

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

International Nuclear Information System (INIS)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

International Nuclear Information System (INIS)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.

Energy Technology Data Exchange (ETDEWEB)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.

International Nuclear Information System (INIS)

The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

Science.gov (United States)

of the digital hearing aid technology that led to the cochlear implant. Former. Marshall Space Flight Center engineers. John Richardson and Joseph Howard ...

Energy Technology Data Exchange (ETDEWEB)

As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operation. A silicate salt addition of the test variation Ap/sub 40/KS/sub 15/ and Ap/sub 40/KS/sub 30/ did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 ..mu..m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 ..mu..m thickness directed to the nucleus of the implant.

Energy Technology Data Exchange (ETDEWEB)

The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

International Nuclear Information System (INIS)

Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion ...

International Nuclear Information System (INIS)

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

KoreaScience (Korea)

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International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by ...

International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

International Nuclear Information System (INIS)

Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, insignificant IGC attack was noticed. The IGC resistance increased with increase in the dose for all the specimens aged at 973 K, and the ...

International Nuclear Information System (INIS)

We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the ...

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. ...

Energy Technology Data Exchange (ETDEWEB)

A prediction of delayed neutron yields for actinides which are important in the nuclear energy field is given. The prediction is based on a correlation related to a suggested cluster structure of the nucleus. (author).

International Nuclear Information System (INIS)

Nuclear power plant has several safety features and each safety feature is based on the operation of pumps and valves. Therefore, it is an essential basis for the safety of nuclear power plant to keep operational readiness of pumps and valves by In-Service Test (IST). According to Ministry of Education, Science and Technology (MEST) Bulletin 2008-14, the safety functioned pumps and valves of all nuclear power plants of Korea Hydro and Nuclear Power Co. Ltd.(KHNP) have been tested to verify their performance of safety function. Each safety grade pump has own design requirement and should be tested to identify whether it could meet the requirement. Design requirements and test references of all safety grade pumps of Wolsung Nuclear Power Plant Unit 2 (Wolsung Unit 2) were examined in this study. And the results of the performance test of the pump were also compared to the design requirements of each pump.

International Nuclear Information System (INIS)

BWRs are so designed that the exhaust steam from main steam safety relief valves is led to pressure suppression pools, and the steam is condensed in pool water, but at this time, dynamic load seems to arise in the pool water. In Tokai No. 2 Power Station, a Mark-2 containment vessel was adopted to improve the reliability as much as possible and to obtain the design with margin. In this report, the result of actual machine test in Tokai No. 2 Power Station and the method of reducing the load are described. When a relief valve works, the discharge of water in exhaust pipes into a suppression pool, the exhaust of air in exhaust pipes and repeated expansion and contraction of bubbles in pool water, and the exhaust of steam and condensation occur. As for the construction of the suppression pool in Tokai No. 2 Power Station, cross-shaped quencher and the structure with jet deflector were installed. The test plan and the test result with an actual ...

Energy Technology Data Exchange (ETDEWEB)

We report the results of characterization of nonlinear refractive index of the composite material produced by MeV Ag ion implantation of LiNbO{sub 3} crystal (z-cut). The material after implantation exhibited a linear optical absorption spectrum with the surface plasmon peak near 430 nm attributed to the colloidal silver nanoclusters. Heat treatment of the material at 500 C caused a shift of the absorption peak to 550 nm. The nonlinear refractive index of the sample after heat treatment was measured in the region of the absorption peak with the Z-scan technique using a tunable picosecond laser source (4.5 ps pulse width). The experimental data were compared against the reference sample made of MeV Cu implanted silica with the absorption peak in the same region. The nonlinear index of the Ag implanted LiNbO{sub 3} sample produced at five times less fluence is on average two times greater than that of the ...

International Nuclear Information System (INIS)

High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients ...

International Nuclear Information System (INIS)

The use of cathode ray irradiated arterial allografts on the reconstruction of small peripheral arteries is described. The fate of irradiated arterial allografts implanted subcutaneously in rats was compared histologically with that of allografts which were fresh, frozen or stored in 70% alcohol. Follow-up studies were made of 10 dogs in which irradiated arterial allografts had been implanted in the femoral artery to be evaluated; long term patency by arteriography, gross and histologic changes of the implanted allografts, and the luminal surface of the implanted allografts by scanning electron microscopic studies. For the purpose of antigenic studies, extracts of canine arteries which had been irradiated, frozen or stored in 70% alcohol, were prepared and tested by the following immunological methods: precipitation, Ouchterlony gel diffusion, and passive cutaneous anaphylaxis. From the results obtained ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after ...

International Nuclear Information System (INIS)

We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous amorphous layer. For ...

Energy Technology Data Exchange (ETDEWEB)

Carbon dioxide is receiving renewed interest as an efficient and environmentally safe refrigerant in a number of applications, including mobile air conditioning and heat pump systems, and hot water heat pumps. Compact heat exchangers for CO{sub 2} systems are designed with small-diameter tubing. The purpose of this study is therefore to provide a better basis for understanding and predicting heat transfer and pressure drop during flow vaporization of CO{sub 2} in microchannels. The ''unusual'' properties of carbon dioxide give heat transfer and two-phase flow characteristics that are very different from those of conventional refrigerants. Examples of these differences are the much higher pressure, the resulting high vapour density, a very low surface tension, and a low liquid viscosity. High pressure and low surface tension has a major effect on nucleate boiling characteristics, and earlier test data have shown a clear dominance ...

International Nuclear Information System (INIS)

For shut-down safety of the turbine generator (securing of auxiliary power operation after load shut-down and preventing the reaching of overspeed after load shut-down with disturbed turbine governing system) additional measures compared to those for superheated steam turbines are required for turbine generators in plants with pressurized water reactor (PWR) as well as those with boiling water reactor (BWR) . Equipment is described (e.g. overspeed govern or selecting connection, vacuum breaker, bypass valves, intercepting valves) which, depending on the own conditions of the individual turbine generator (e.g. run-up time, vacuum, enclosed energy), may be applied alone or in jointly. (orig.).

Energy Technology Data Exchange (ETDEWEB)

New standard catalogs for piping, supports, and valves have been introduced by Kraftwerk Union (KWU) for the first time in its Convoy series of PWR plants. These catalogs, underlying regulatory codes, and newly developed KWU specifications are described. Feedwater and main steam piping systems within the containment, including pipe supports and valves, are used to demonstrate the high quality level of piping technology achieved in the Federal Republic of Germany. Such quality standards ensure the integrity of single components as well as of the entire system, so that, under certain conditions, pipe whip restraints against postulated breaks have become unnecessary. The quality aspects apply basically for both PWR and BWR plants of KWU.

International Nuclear Information System (INIS)

The loss of seal of the H9 channel in vacuum, freeing the entire cross section of the front part, leads to a fast leak that progresses rapidly. The effect of depressurizing the reflector can leads to shutdown of the shutdown rod pumps. The source changer associated with the channel fills completely before the valve closes. All of the leak water remains contained within the source changer containment. After the valves open, cooling of the fuel element is handled by natural convection, requiring a reversal of the flow between the plates. This changeover, which takes place at a relatively low pressure level, could lead to local boiling in the fuel element. Consequently, irreversible transformations cannot be excluded as possibilities for the fuel element and even for the control rod. Subsequently, the can is refilled with heavy water with establishment of the usual pressure levels.

British Library Electronic Table of Contents (United Kingdom)

In this study, a new type of thin, compact, and light weighed diaphragm micro-pump has been successfully developed to actuate liquid by the vibration of a diaphragm. The micro-diaphragm pump with two valves is fabricated in an aluminum case by using highly accurate CNC machine, and the cross-section dimension is 28?mm??5?mm. Both valves and diaphragm are manufactured from PDMS. The amplitude of vibration by a piezoelectric device produces an oscillating flow and alters the chamber volume by the curvature change of a diaphragm. Several experimental set-ups for performance tests in a single micro-diaphragm pump, isothermal flow open system, and a closed liquid cooling system are designed and implemented. The performance of a one-side actuating micro-diaphragm pump is affected by the design ...

International Nuclear Information System (INIS)

Fluidic two diode pumps have been developed for moving highly toxic and for radioactive waste liquors about chemical plant. The pumps have a cylinder into which liquor is initially sucked and then expelled. For situations where no maintenance can be carried out the need has arisen for a fluidic alternator to the solenoid ejector system used on top of the pump cylinder to supply an alternating negative/positive air supply. A fluidic air alternator has been constructed by modifying a small vortex amplifier and inserting an ejector opposite to the throat of the outlet diffuser. The vortex valve ejector is described and performance characteristics are presented. Several developments of the V.V.E. for fluidic pumping and other applications are also reported. (author).

KoreaScience (Korea)

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Science.gov (United States)

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Energy Technology Data Exchange (ETDEWEB)

A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess directly resulting ...

Energy Technology Data Exchange (ETDEWEB)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

The effect of helium on the mechanical properties and fracture behaviors of a type 316 austenitic steel is presented. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small, thin specimens, using a cyclotron accelerator. Average helium content in the He-deposited region was 50 to 2000 appm He. These specimens showed the transition of fracture mode from transgranular to intergranular fracture in elevated temperature tests. The transition temperature decreased with increase in the amount of implanted helium. For example, in the case of 2000 appm and 500 appm He implantation, the transition temperatures were between 773 and 873 K and 873 and 973 K, respectively. (orig.).

International Nuclear Information System (INIS)

Chronic mesenteric arterial ischemia is an uncommon condition associated a high morbidity and mortality. It is most Commonly caused by atherosclerotic occlusive disease. Patients may suffer epigastric or periumbilical postprandial pain ten to thirty minutes after eating. A case of chronic mesenteric artery stenosis, the diagnosis was performance with colonoscopy and biopsy. We present a case report of a patient with chronic mesenteric ischemia. Mesenteric arteriography was performed and documented estenosis of the mesenteric superior artery. Then percutaneous arteriography with angioplasty and implant of stent was performed. The patients became completely asymptomatic and normal colon mucous is observed in control colonoscopy. The purpose of this report is to present the case endoscopy, clinic and radiological features and to describe the percutaneous angioplasty and implant of stent. We believe that angioplasty treatment offers and improvement ...

International Nuclear Information System (INIS)

N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

British Library Electronic Table of Contents (United Kingdom)

Abstract Introduction.- Infection is the worst complication seen with inflatable penile prosthesis (IPP). Both the American Medical Systems (AMS) and Coloplast IPP have infection retardant coatings. AMS is coated at the factory with rifampicin and minocycline (InhibiZone). The Coloplast IPP has a hydrophilic coating covalently bonded to its components that will absorb any aqueous solution before implantation and provides increased surface lubricity to decrease bacterial adherence. Aim.- We tested several antibiotic dips comparing zones of inhibition (ZOI) against five commonly infecting bacteria with coated Coloplast implants. Results were compared with those ZOI created with strips of an AMS IPP precoated with InhibiZone. Methods.- Pieces of sterile Coloplast Titan IPP were dipped in (i) ...

Energy Technology Data Exchange (ETDEWEB)

The risk perception of the public consists of two components: the objectively factual component and the subjectively irrational component. The two strategies adopted by the German gas supply industry are the internal and the external communication strategy. Concepts and measures of accident precaution, registration and analysis of accident data (installation and operating errors, defects on flue systems, pipelines and valves, subsequent installation of gas appliances) are discussed. (R.P.)

Energy Technology Data Exchange (ETDEWEB)

This book includes the latest developments and covers pump performance, selection and operations, materials, seals and packings, effective fluid characteristics, filtration, piping systems, economics, valves, instrumentation, automatic controls, power transmission equipment, pump and pipeline heating, and more. An extensive data section contains formulas, charts, symbols, nomographs, and standard specification documents.

International Nuclear Information System (INIS)

This paper reviews power fluidics technology in the nuclear industry giving emphasis also on its potential uses in chemical plants and in flood and irrigation control. This is a technology of controlling process fluids by purely hydrodynamic methods, which should increase system reliability by eliminating valves, pumps and other fluid control devices that are often causes of failure. This review indicates that the hydrodynamics of fluidic components are not satisfactorily understood at present and may be more complex than similar theory in electronics.

International Nuclear Information System (INIS)

Object: To prevent a sudden drop in the level of a coolant in a annular pipe encased within a downcomer pipe. Structure: The coolant levels in annular pipes encased within downcomer pipes are simultaneously measured by level gauges which generate signals representative of coolant levels. The signals are fed to a level control system which will actuate valves to regulate the cover gas pressure in order to average the level differences among the annular pipes in different downcomer pipes. (Kamimura, M.).

Energy Technology Data Exchange (ETDEWEB)

Due to the fast cooling of steam turbines, the shutdown time during maintenance or when repairing faults and damage can be shortened. This booklet describes various processes for cooling steam turbines. It is recommended that fast cooling should be planned in designing new plants and corresponding arrangements should be provided in the form of pipe connections and valves. (DG).

International Nuclear Information System (INIS)

Complete text of publication follows. Baikal is an ancient unique lake. The sweet water of Baikal is crystal clean; it concentrates oxygen and contains scarce silicon. This feature is provoked very particular interest for scientists and poses some awkward questions concerning the preservation of Baikal's ecosystem. A profound investigation of fish otholiths, animal teeth, sponges, valves of mollusks and diatom algae provides chronological information, possibility to reconstruct the events proceeding in the environment based on variations of their chemical composition. Because these study objects are small-sized, and some of them are micron-size, application of the electron-probe microanalysis turns to be quite productive. The goal of this study is to disclose performance capabilities of this method while investigating the Baikal flora and fauna. Investigations were performed by devices JCXA-733 and JXA-8200 using the electron microscope and x-ray microprobe modes. ...

Science.gov (United States)

A patient with a totally edentulous maxilla and a seVere Class III intermaxillary relationship in the anterior region was treated by implants. In the mandible, there were 10 teeth between the second premolars. The inclination and width of the maxillary anterior residual bone were measured on cephalometric X-ray film obtained before treatment. The results of cephalometric analysis did not support clockwise rotation of the mandible or lingual angling of the maxillary anterior teeth by use of prosthesis to improve the Class III relationship. Ten implants were simultaneously placed in the maxilla. Then, a maxillary temporary full bridge was seated after reduction of the crown lengths of the mandibular anterior teeth. An apically positioned flap operation was performed to eliminate periodontal pockets and to obtain clinically suitable crown lengths of the mandibular anterior teeth. A noncemented, screw-retained maxillary full bridge and a ...

UK PubMed Central (United Kingdom)

A ten week old girl who had previously undergone a palliative procedure for the hypoplastic left heart syndrome had unrelieved aortic coarctation that did not respond to standard balloon dilatation....Full Text Available

International Nuclear Information System (INIS)

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is ...

UK PubMed Central (United Kingdom)

Background and purpose It has been speculated that the prevalence of metal allergy may be higher in patients with implant failure. We compared the prevalence and cause of revisions following...Full Text Available

Science.gov (United States)

... ADD137758. Title : The Oxidation Behavior of CoCrAlY, CoCrAl and Yttrium-Implanted CoCrAl Alloys Compared and Contrasted,. ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the ...