Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

Energy Technology Data Exchange (ETDEWEB)

We studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on multicrystalline-silicon (mc-Si) cells from Solarex. We conducted an investigation of plasma deposition and etching processes on full-size mc-Si cells processed in commercial production lines, so that any improvements obtained would be immediately relevant to the PV industry. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen-printed gridlines as etch masks to form self-aligned, selectively doped emitter profiles. This process results in reduced gridline contact resistance when followed by plasma-enhanced chemical vapor deposition (PECVD) treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier doping beneath the gridlines ...

KoreaScience (Korea)

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Science.gov (United States)

Language: English ...

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There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

UK PubMed Central (United Kingdom)

A duplex TaqMan real-time RT-PCR assay was developed for the detection of California (CAL) serogroup viruses and Cache Valley virus (CVV), for use in human surveillance. The targets selected...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Energy Technology Data Exchange (ETDEWEB)

Rotary screw traps, located at four sites in the Grande Ronde River basin, were used to characterize aspects of early life history exhibited by juvenile Onchorhychus mykiss during migration years 1995-99. The Lostine, Catherine Creek and upper Grande Ronde traps captured fish as they migrated out of spawning areas into valley rearing habitats. The Grande Ronde Valley trap captured fish as they left valley habitats downstream of Catherine Creek and upper Grande Ronde River rearing habitats. Dispersal downstream of spawning areas was most evident in fall and spring, but movement occurred during all seasons that the traps were fished. Seaward migration occurred primarily in spring when O. mykiss smolts left overwintering area located in both spawning area and valley habitats. Migration patterns exhibited by O. mykiss suggest that Grande Ronde Valley habitats are used for overwintering ...

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

International Nuclear Information System (INIS)

In this chart review the authors describe 51 cases of PSOAS abscess treated at Hospital Universitario del Valle in Cali, Colombia in the last 10 years. It is not a rare condition and require high index of suspicion. epidemiology, bacteriology, diagnosis and treatment are discussed.

UK PubMed Central (United Kingdom)

El Niño/Southern Oscillation related climate anomalies were analyzed by using a combination of satellite measurements of elevated sea-surface temperatures and subsequent elevated rainfall and...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Results related to the experimental measurement campaign to characterize atmospheric aerosol carried out near Avigliana (Turin) from 18 to 22 October 1994 are presented in this paper. In the frame of the project aimed at evaluating the impact of the mountain motor way A-32 Rivoli-Bardonecchia-Frejus on the Susa Valley environment and on man the present measurement campaign is the second, and last, one envisaged in the project. The sampling place is in the initial part of the Susa Valley while previous measurements were carried out in the high part of it. Mass mean concentrations result greater in the low than in the high part of the valley approximately by a factor of 3. It is not possible to prove a difference between the 3 sampling positions transversely placed from 20 to 80 m. in comparison with the motor way axis. Whereas mass mean concentrations dropped substantially due to atmospheric precipitations during the last ...

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

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Combustion performance trials were conducted on a commercial sample of Coal Valley coal from the Coalspur coalfield in the foothills region of Alberta. The project included an analytical investigation of the coal and coal ash properties as well as combustion studies in the CCRL pilot-scale, pulverized coal-fired boiler, under conditions representative of those in large steam boilers. This report gives the objectives of the project, the analyses of the coals, and describes the facilities and operational procedures. An evaluation of the experimental results and the conclusions are presented.

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

Energy Technology Data Exchange (ETDEWEB)

One of the principal problems confronting the remediation of Bear Creek Valley is the cleanup of contaminated groundwater. The S-3 Site is one of the locations in the valley where groundwater is most contaminated, and contamination from the S-3 Site has also caused extensive contamination of downgradient groundwater. This groundwater plume, therefore, has a high priority in the Bear Creek Valley remedial process. Pumping and treating groundwater was identified early in the feasibility study as a likely remedial alternative for the S-3 Site groundwater plume. The hydrology and geochemistry of the plume are extremely complex. There is a high degree of uncertainty in the current understanding of how the aquifer will react physically and chemically to pumping, making evaluation of a pump-and-treat alternative impractical at the present time. Before a pump-and-treat alternative can be evaluated, its technical practicability, ...

Energy Technology Data Exchange (ETDEWEB)

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...

Energy Technology Data Exchange (ETDEWEB)

This study reviews the wireline log responses of some geothermal fields in the Imperial Valley, California. The fields under study include the Heber, the East Mesa, the Brawley, and the Westmoreland. The well logs used in the study did not include all the wireline surveys obtained by the operators. The selected well logs obtained under special arrangements with the operators were chosen to maintain the anonymity of specific well locations but are only representative of each area. Analysis of the well logs indicates that on an individual field basis, the well logs are excellent for correlation purposes. The presence of extremely saline fluids in some fields precludes the monitoring of Q/sub v/ (cation exchange capacity per unit volume) profile for detection of hydrothermally altered zones. The producing sections in all the fields are characterized by low porosity and high resistivity.

Wastenet

...Albury NSW Armidale Dumaresq NSW Ashfield NSW Auburn NSW Ballina NSW Balranald NSW Bankstown NSW Bathurst Regional NSW Baulkham Hills NSW Bega Valley NSW Bellingen NSW Berrigan NSW Blacktown NSW Bland NSW Blayney NSW Blue Mountains NSW Bogan NSW Bombala NSW Boorowa NSW Botany Bay NSW Bourke NSW Brewarrina NSW Broken Hill NSW Burwood NSW Byron NSW Cabonne NSW Camden NSW Campbelltown NSW Canada Bay NSW Canterbury NSW Carrathool NSW Central Darling NSW Cessnock NSW Clarence Valley NSW Cobar NSW Coffs Harbour NSW Conargo NSW Coolamon NSW Cooma-Monaro NSW Coonamble NSW Cootamundra NSW Corowa NSW Cowra ...

Energy Technology Data Exchange (ETDEWEB)

Geothermal budget actual amounts are shown for FY 1989 -1992, broken down by about 15 categories. Here, the main Program categories are: Exploration Technology, Drilling Technology, Reservoir Technology, Conversion Technology (power plants and materials), Industry-Coupled Drilling, Drilling Applications, Reservoir Engineering Applications, Direct Heat, Geopressured Wells Operation, and Hot Dry Rock Research. Here the title--Industry-Coupled Drilling--covered case studies of the Coso, CA, and Dixie Valley, NV, fields, and the Long Valley Exploratory Well (which had started as a magma energy exploration project, but reported here as a hydrothermal prospect evaluation well). (DJE 2005)

Energy Technology Data Exchange (ETDEWEB)

A three-component seismic line acquired over the Zamora gas field, northern Sacramento Valley, California, displays conventional (P-P) and converted-wave (P-SV) seismic anomalies. Well log and seismic modeling results indicate that bright-spot reflection strengths are related to variations in fluid saturation and lithology. The converted-wave reflection strengths and interval velocities provide valuable information that compliments more conventional strategies such as amplitude with offset and polarity analysis. This integrated strategy can improve risk evaluation and well site selection in areas where rapid changes in reservoir quality impact resource evaluation.

Energy Technology Data Exchange (ETDEWEB)

Brown coal resources of the Latrobe Valley in Australia total 140 billion tons to a depth of 975 feet, while economically recoverable reserves have been calculated to total 57 billion tons. Although the coal provides only a very low heating value, about 3300 Btu/lb with 60% moisture content, the enormous seam thicknesses with little overburden allow large scale, open cut mining operations. The low cost and high reactivity of the coal is attracting extensive coal liquefaction research. Research into dewatering processes for the high moisture content brown coal is being conducted. The dried brown coal could be used both domestically and internationally for electricity generation and as an industrial fuel.

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

International Nuclear Information System (INIS)

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

CERN Document Server

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

Science.gov (United States)

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

Energy Technology Data Exchange (ETDEWEB)

This report contains studies which are part of the Bonneville Power Administration`s program to protect, mitigate, and enhance fish and wildlife affected by the development and operation of hydroelectric facilities on the Columbia River and its tributaries. Attention is focused on population monitoring studies in the Sawtooth Valley Lakes. Selected papers are indexed separately for inclusion in the Energy Science and Technology Database.

Wastenet

... The moorland landscape looks especially colourful in late summer, while spring is the perfect time to come and see migrant birds like redstarts,...Valley This is a delightful oak woodland to walk through - especially in spring and early summer when lots of migrating birds come to breed ... Fowlmere Fowlmere's reedbeds and pools are fed by natural chalk springs, and a chalk stream runs through the reserve. Special birds ... There are common woodland birds in spring and turtle doves in spring and summer. Haweswater If you want to see a golden ...

Energy Technology Data Exchange (ETDEWEB)

The mass-energy spectra of the fragments of thermal fission of {sup 242m}Am are measured using the time-of-flight technique. The resulting mass-yield curve and peak-to-valley ratio agree with radiochemical data. The parameters of the kinetic energy distribution of the fragments are determined for the first time. Data on the fine structure of mass spectra in the region of cold fragmentation are presented. 15 refs., 4 figs.

Energy Technology Data Exchange (ETDEWEB)

This paper details the development of a decontamination approach for the West Valley Demonstration Project (WVDP), Decontamination Project Plan (Plan). The WVDP is operated by West Valley Nuclear Services Company (WVNSCO), a subsidiary of Westinghouse Government and Environmental Services, and its parent companies Washington Group International and British Nuclear Fuels Limited (BNFL). The WVDP is a waste management effort being conducted by the United States Department of Energy (DOE) at the site of the only commercial nuclear fuel reprocessing facility to have operated in the United States. This facility is part of the Western New York Nuclear Service Center (WNYNSC), which is owned by the New York State Energy Research and Development Authority (NYSERDA). As authorized by Congress in 1980 through the West Valley Demonstration Project Act (WVDP Act, Public Law 96-368), the DOE's primary mission at the WVDP is to ...

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

Energy Technology Data Exchange (ETDEWEB)

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

Energy Technology Data Exchange (ETDEWEB)

Laboratory experiments were conducted to simulate the transfer of acidic THOREX waste from Tank 8D-4 into the alkaline PUREX waste in Tank 8D-2 at West Valley. The purpose of the experiments was to explore means of minimizing the production of nitric oxide (NO) gas during mixing of the two wastes and to assess the potential for the gas to further react in the vapor space possibly leading to enhanced corrosion of the tank walls. Forty one THOREX/PUREX mixing tests were conducted to explore the effects of stirring rate, pH, THOREX addition rate, THOREX or PUREX dilution, and temperature. The two most important criteria for minimizing NO production were to maintain some degree of agitation and the keep the pH in the PUREX high, preferably >12. Steel corrosion tests were performed in the presence of low partial pressures of NO{sub 2} and liquid water or water vapor. The NO{sub 2} (from oxidation of NO in the vapor space) concentrations were representative of those ...

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

International Nuclear Information System (INIS)

Mass distribution in 28.5 MeV alpha particle induced fission of "2"3"2Th has been determined using gamma spectrometric technique. The chain yields of 24 different fission products covering both symmetric and asymmetric mass divisions were determined. The mass distribution was found to be asymmetric with peak positions at mass numbers 96 and 136 respectively while the peak to valley ratio was 3.86. The results are compared with the available literature on 14 MeV neutron induced fission of "2"3"5U. (orig.).

Science.gov (United States)

An island of isomers have recently been observed on both sides of the N=40 shell below the Ni isotopes. Isomeric states in the 65Fe and 67Fe allow the knowledge of the single particle structure around the {nu}g9/2 shell. Moreover, the excitation energy of the first 2+ and 4+ states in the 68Fe have been established by {beta}-{gamma} correlation. The evolution of the structure of the Fe isotopes going far away from the valley of stability is, for the first time, given for N>40.

Energy Technology Data Exchange (ETDEWEB)

PUREX high-level waste (HLW) is contained at the West Valley Demonstration Project (WVDP) in an underground carbon-steel storage tank. The HLW consists of a precipitated sludge and an alkaline supernate. This report describes the system that the WVDP has developed and implemented to resuspend and wash the HLW sludge from the tank. The report discusses Sludge Mobilization and Wash System (SMWS) equipment design, installation, and testing. The storage tank required modifications to accommodate the SMWS. These modifications are discussed as well.

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

Energy Technology Data Exchange (ETDEWEB)

Alluvial fans along the east side of central Death Valley are being actively back-tilted along the Death Valley fault zone. Initial modelling of the Copper Canyon and Furnace Creek fans led to recognition of distinct segments. Field reconnaissance and aerial photo mapping were conducted to check model results and improve segment discrimination. Surface roughness, relative position, vegetation distribution, and drainage patterns provided independent evidence for segment discrimination. Subsequent modelling of individual segments produced a range of tilt values from 0.275[degree] to 0.559[degree] down to the northeast. Continued analysis of these fan segments is concentrated on: (1) assigning confidence and error values to the tilt values; and (2) dating individual segments. Further work will compare the tilt rates of east-side fans with those from the west. The mean squared error (MSE) is currently being used as a first order assessment of the ...

International Nuclear Information System (INIS)

The chemical composition and evolution of produced waters associated with gas production in the Palm Valley gas field, Northern Territory, has important implications for issues such as gas reserve calculations, reservoir management and saline water disposal. The occurrence of saline formation water in the Palm Valley field has been the subject of considerable debate. There were no occurrences of mobile water early in the development of the field and only after gas production had reduced the reservoir pressure, was saline formation water produced. Initially this was in small quantities but has increased dramatically with time, particularly after the initiation of compression in November 1996. The produced waters range from highly saline (up to 300,000 mg/L TDS), with unusual enrichments in Ca, Ba and Sr, to low salinity fluids that may represent condensate waters. The Sr isotopic compositions of the waters ("8"7Sr/"8"6Sr = 0.7041-0.7172) are ...

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

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We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

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A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

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We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

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Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

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We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

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The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

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Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

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The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

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Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

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Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

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Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...

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Maximum cross-correlation techniques have been used with satellite data to estimate winds and sea surface velocities for several years. Los Alamos National Laboratory (LANL) is currently using a variation of the basic maximum cross-correlation technique, coupled with a deterministic application of a vector median filter, to measure transverse winds as a function of range and altitude from incoherent elastic backscatter lidar data taken throughout large volumes within the atmospheric boundary layer. Hourly representations of three- dimensional wind fields, derived from elastic lidar data taken during an air-quality study performed in a region of complex terrain near Sunland Park, New Mexico, are presented and compared with results from an Environmental Protection Agency (EPA) approved laser doppler velocimeter. The wind fields showed persistent large scale eddies as well as general terrain following winds in the Rio Grande valley.

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Separation of the bulk soluble chemical salts from the insoluble metal hydroxides and radionuclides is central to the strategy of disposing Hanford tank waste. Sludge washing and caustic leaching have been selected as the primary methods for processing the 230 million L (61,000,000 gal) of Hanford tank waste. These processes are very similar to those selected for processing waste at the West Valley Site in New York and the Savannah River Site in South Carolina. The purpose of sludge washing is to dissolve and remove the soluble salts in the waste. Leaching of the insoluble solids with caustic will be used to dissolve aluminum hydroxide and chromium hydroxide, and convert insoluble bismuth phosphate to soluble phosphate. The waste will be separated into a high-level solids fraction and a liquid fraction that can be disposed of as low-level waste after cesium removal. The washing and leaching operations involve batchwise mixing, settling, and decanting within the ...

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Municipal power systems developed early in the Pacific Northwest, but a new dimension was added in the 1930s when the public utility district (PUD) concept combining urban and rural areas encited vigorous debate and the public rejected private-utility candidates. A favorable national climate developed for consumer-owned systems during the 1920s and 30s encouraging the passage of the Federal Water Power Act, the creation of the Tennessee Valley Authority, the building of Hoover Dam, and the establishment of the Bonneville Power Administration. This article reviews developments following the Public Utility Act of 1935, which authorized the Federal Power Commission and the uniform system of accounts. After tracing the record of investigations and policy trends during the Roosevelt era, it concludes that utilities benefited from accounting regulations. (DCK)

British Library Electronic Table of Contents (United Kingdom)

Abstract Four stratigraphic sections in the southern part of the Columbia Basin preserve a sequence of aeolian and non-aeolian sediments ranging in age from 943 to >470 14C ka based on accelerator mass spectrometry radiocarbon dating of fossil molluscs, geochemistry of Cascade Mountain-sourced tephra and association with formally recognized pedostratigraphic units (the Washtucna and Old Maid Coulee soils). Study sections are interpreted as representing concurrent deposition of loess and distal Missoula Flood rhythmites in valleys tributary to main drainages backflooded during the Missoula Floods, and formation of carbonate and iron-rich soils. Sediments belong to the formally recognized L-1 and L-2 loess units established for the Palouse loess, which were deposited in the Columbia Basin su...

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The tests reported were part of the DOE Geothermal Reservoir Well Stimulation Program. This East Mesa (Imperial Valley, CA) well was successfully stimulated with two fracture treatments, a dendritic fracture and a planar fracture. The natural flow production of the well increased 114 percent, to 197,900 lb/hr. These tests were among the few successful attempts of this program to increase flow from geothermal production wells. The general belief is that these tests worked OK primarily because the formation was sedimentary rock (similar to rock in most oil and gas wells that have been stimulated successfully. Similar tests in geothermal hard rock reservoirs did not work very well. (DJE 2005)

International Nuclear Information System (INIS)

Geologic studies in connection with Project Discus Thrower have furnished detailed stratigraphic and structural information about northwestern Yucca Flat, Nevada Test Site. The Paleozoic rocks consist of a lower carbonate sequence, argillite of the Eleana Formation, and an upper carbonate sequence. The distribution of these rocks suggests that both top and bottom of the Eleana are structural contacts, probably thrusts or reverse faults. The overlying tuff includes several units recognized in the subsurface, such as the Fraction Tuff and tuff of Redrock Valley. Other units recognized include bedded tuff associated with the Grouse Canyon Member of Belted Range Tuff, and the Rainier Mesa and Ammonia Tanks Members of the Timber Mountain Tuff. The Timber Mountain and Grouse Canyon are extensively altered to montmorillonite (a swelling clay), possibly as a result of ponding of alkaline water. The overlying alluvium locally contains at the base a clayey, tuffaceous ...

Science.gov (United States)

Forced convective heat transfer in a cross-corrugated channel solar air heater has been studied experimentally using air as a working fluid. The channel was formed by two transversely positioned corrugated sheets and two flat thermally insulated side walls. One corrugated sheet was heated by a radiant heater, while the other was thermally insulated. The fluid velocity and temperature, and the wall temperature and the local heat flux across the heated corrugated sheet were measured for a variety of operating flow rates. Experimental results for the channel geometry have yielded the correlation Nu = 0.0743 (Re)[sup 0.76]. This heat-transfer coefficient is about 2.8 times that of a smooth flat channel. The experiments showed that local heat transfer rate was smaller on the valley of the corrugation than that on the peak. The ratio of the local heat transfer rates on the two locations was related to the Reynolds number.

International Nuclear Information System (INIS)

Understanding the erosion and deposition rates in a small watershed is important for designing soil and water conservation measures. The objective of this study is to estimate the net soil loss and gain at points with various land use types and landform positions in a small watershed in the Sichuan Hilly Basin of China by the 137Cs tracing technique. Among various land use types, the order of erosion rate was bare rock > sloping cultivated land > forest land. The paddy field and Caotu (a kind of cultivated land located at the foot of hills) were depositional areas. The erosion rate under different landform was in this order: hillside > saddle > hilltop. The footslope and the valley were depositional areas. The 137Cs technique was shown to provide an effective means of documenting the spatial distribution of soil erosion and deposition within the small watershed.

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Iodo(/sup 14/C)antipyrine autoradiography was used to measure gastric mucosal blood flow in anesthetized rats and to study regional distribution. Blood flows of 61 +/- 8 ml.100 g-1.min-1 (means +/- SE) in corpus and 84 +/- 9 ml.100 g-1.min-1 in antral mucosa compared well with previously reported measurements by hydrogen clearance. Blood flow in the crests of corpus mucosal folds was significantly higher than in the valleys between folds, indicating that the greater susceptibility of the former areas to acute injury, documented in several studies, is not associated with a perfusion defect in the resting stomach. Corpus mucosal blood flow was also higher in the side walls of the stomach than in the greater curvature region, and in distal than in proximal locations. No systematic regional variations within antral mucosa were demonstrated.

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

International Nuclear Information System (INIS)

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

Energy Technology Data Exchange (ETDEWEB)

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

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New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

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In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

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The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

International Nuclear Information System (INIS)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

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As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

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The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

International Nuclear Information System (INIS)

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

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An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

UK PubMed Central (United Kingdom)

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

Science.gov (United States)

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

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We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

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Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

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Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

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In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Energy Technology Data Exchange (ETDEWEB)

A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

British Library Electronic Table of Contents (United Kingdom)

Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

International Nuclear Information System (INIS)

The threshold values of indicator species and ratios delineating the transition between NO_x and VOC sensitivity of ozone formation are assumed to be universal by various investigators. However, our previous studies suggested that threshold values might vary according to the locations and conditions. In this study, threshold values derived from various model simulations at two different locations (the area of Switzerland by UAM Model and San Joaquin Valley of Central California by SAQM Model) are examined using a new approach for defining NO_x and VOC sensitive regimes. Possible definitions for the distinction of NO_x and VOC sensitive ozone production regimes are given. The dependence of the threshold values for indicators and indicator ratios such as NO_y, O_3/NO_z, HCHO/NO_y, and H_2O_2/HNO_3 on the definition of NO_x and VOC sensitivity is discussed. Then the variations of threshold values under low emission conditions and in two different days are examined in ...

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Detailed quantitative sequence stratigraphic analysis and three-dimensional (3-D) modeling of the fluvio-deltaic Pikeville, Hyden, and four Corners formations of the Breathitt Group, eastern Kentucky, indicate that it is possible to make confident deterministic correlations of sand bodies at offshore development well spacings. The key to high-confidence correlation is the delineation of the 3-D architecture of third-order composite sequences, which are seismically mappable, and the recognition of internal fourth-order sequences, which are stacked into lowstand, transgressive, and highstand sequence sets. Volumetric partitioning of reservoir sand bodies between systems tracts and sequences allows prediction of channel sandstone geometries and channel: crevasse splay ratios. Furthermore, channel-fill type is predictable from the sequence stratigraphy. Within 13 studied fourth-order sequences, incised valley fills represent the main reservoirs, which are laterally ...

Science.gov (United States)

The Eagle Flat basin, an intermontane basin in Trans-Pecos Texas, is being considered as a possible site for the Texas repository of low-level radioactive wastes. Intermontane basins and associated normal faults formed in response to Basin and Range tectonism that began about 24 Ma ago. The most active late Tertiary and Quaternary faults occur within the Hueco Bolson (HB) and the Salt Basin/Salt Flat/Lobo Valley, west and east, respectively, of the proposed repository. Several faults of the southeast HB which are within 50 km of the site, displace middle Pleistocene deposits 10 to 24 m. The most recent surface rupture in the southeast HB probably occurred on the Amargosa fault during the Holocene. Upper Pleistocene deposits are offset 2.5 to 4.5 m, and middle Pleistocene deposits are displaced 24 m. Fault scarps within 50 km east of the proposed repository are associated with faults bounding the Salt Basin/Salt Flat/Lobo Valley. In the southern ...

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Lacustrine rocks are a significant component of many rift-valley sequences. Comparisons of both active and ancient rift valleys indicate that the lacustrine facies are commonly rich in organic matter and may be important sources for oil. For example, Holocene sediments in Lake Tanganyika and Cretaceous lacustrine rocks in west Africa contain as much as 12% and 20% TOC, respectively. The Newark Supergroup contains abundant lacustrine rocks. The widespread occurrence of black shales, the general similarity to known organically rich rift systems, and a few isolated geochemical analyses have caused some speculation about the potential of the Newark Supergroup to be an effective source of oil and gas. Sufficient geochemical analyses are available from lacustrine rocks in the Newark, Connecticut, and Deep River basins to evaluate their potential as hydrocarbon sources. In general, both the quantity and quality of organic matter in these rocks are ...

Energy Technology Data Exchange (ETDEWEB)

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

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In support of the efforts to apply ceramics in advanced heat engines, a study was made of the sliding performance of ceramics at the ring/cylinder interface of low heat rejection engines. The objective was to understand the basic mechanisms controlling the wear of candidate ceramics and thereby identify means for applying these ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and several plasma-sprayed ceramic coatings without lubrication were unsuccessful because of high friction and high wear rates. Experiments using a polyalphaolefin lubricant at temperatures to 260 C identified several combinations having wear rates in the general range likely to be acceptable for engines. Plasma-sprayed coatings of chromium oxide and hypersonic powder flame sprayed coatings of cobalt-bonded tungsten carbide performed particularly well as ring coatings. Similar performance was obtained with these ring ...

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Studies were conducted to describe current habitat conditions in the White River basin above White River Falls and to evaluate the potential to produce anadromous fish. An inventory of spawning and rearing habitats, irrigation diversions, and enhancement opportunities for anadromous fish in the White River drainage was conducted. Survival of juvenile fish at White River Falls was estimated by releasing juvenile chinook and steelhead above the falls during high and low flow periods and recapturing them below the falls in 1983 and 1984. Four alternatives to provide upstream passage for adult salmon and steelhead were developd to a predesign level. The cost of adult passage and the estimated run size of anadromous fish were used to determine the benefit/cost of the preferred alternative. Possible effects of the introduction of anadromous fish on resident fish and on nearby Oak Springs Hatchery were evaluated. This included an inventory of resident species, a genetic study of native ...

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Thermal and mechanical properties for geothermal formations are tabulated for a range of temperatures and stress conditions. Data was obtained from the technical literature and direct contacts with industry. Thermal properties include heat capacity, conductivity, and diffusivity. Undisturbed geothermal profiles are also presented. Mechanical properties include Youngs modulus and Poisson ratio. GEOTEMP thermal simulations of drilling, production and injection are reported for two geothermal regions, the hot dry rock area near Los Alamos and the East Mesa field in the Imperial Valley. Actual drilling, production, and injection histories are simulated. Results are documented in the form of printed GEOTEMP output and plots of temperatures versus depth, radius, and time. Discussion and interpretation of the results are presented for drilling and well completion design to determine: wellbore temperatures during drilling as a function of depth; bit temperatures over the ...

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Thermal gradients and thermal conductivities were obtained in real time using an in situ heat-flow technique in 15 shallow (90 to 150 m) wells drilled between Brawley and Glamis in the Imperial Valley, Southern California. The in situ measurements were supplemented by follow-up conventional temperature logs in seven of the wells and by laboratory measurements of thermal conductivity on drill cuttings. The deltaic sedimentary material comprising the upper approx. 100 m of the Salton Trough generally is poorly sorted and high in quartz resulting in quite high thermal conductivities (averaging 2.0 Wm/sup -1/ K/sup -1/ as opposed to 1.2 to 1.7 for typical alluvium). A broad heat-flow anomaly with maximum of about 200 mWm/sup -2/ (approx. 5 HFU) is centered between Glamis and East Brawley and is superimposed on a regional heat-flow high in excess of 100 mWm/sup -2/ (> 2.5 HFU). The heat-flow high corresponds with a gravity maximum and partially with a minimum in ...

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Five corrosion probes were received from West Valley Nuclear Services for evaluation in simulated tank 8D-2 3rd-stage sludge wash slurry. The same waste slurry simulated was also used in a series of ongoing corrosion studies assessing the effects of in-tank sludge washing on the integrity of tank 8D-2. Two of the corrosion probes were installed in the coupon corrosion test vessels operating at {approximately}150{degrees}F to compare performance of the probes with that observed by coupon tests conducted in the same vessels. Corrosion rate data calculated from electrical resistance measurements of the corrosion probes were evaluated for this study using two slightly different approaches. One approach uses the total length of exposure of the probe to give a ``time-averaged`` value of the corrosion rate. The other approach uses a shorter period of time (relative to the length of the test) in the calculation of corrosion rate, and is referred to as the ``instantaneous`` ...

Energy Technology Data Exchange (ETDEWEB)

The project was designed to quantify the impacts of longwall mine subsidence (LWMS) on the production and quality of agricultural vegetated environments. This project utilised a variety of traditional ground based sampling techniques including biomass harvests and estimates, leaf area index (LAI), pasture height, species composition and soil sampling along with proximal sensor data capture using a Crop Circle{trademark} and an EM38. Satellite imagery was collected using the Quickbird satellite and the high resolution imagery was used to monitor large areas of LWMS affected areas and adjacent un-mined land. Two landscapes were investigated using a whole of mine site technique including remote sensing, ground survey and traditional agricultural monitoring methods. The landscapes were at the Kestrel site in Emerald, QLD including a forage sorghum and an improved pasture and at Beltana in the Hunter Valley, NSW including an irrigated lucerne pasture and an unimproved ...

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Eaton, in partnership with Oak Ridge National Laboratory and the Electric Power Research Institute (EPRI) has completed a project that applies a combination of wireless sensor network (WSN) technology, anticipatory theory, and a near-term value proposition based on diagnostics and process uptime to ensure the security and reliability of critical electrical power infrastructure. Representatives of several Eaton business units have been engaged to ensure a viable commercialization plan. Tennessee Valley Authority (TVA), American Electric Power (AEP), PEPCO, and Commonwealth Edison were recruited as partners to confirm and refine the requirements definition from the perspective of the utilities that actually operate the facilities to be protected. Those utilities have cooperated with on-site field tests as the project proceeds. Accomplishments of this project included: (1) the design, modeling, and simulation of the anticipatory wireless sensor network (A-WSN) that ...

International Nuclear Information System (INIS)

The EUROTRAC sub-project ''Tropospheric Ozone Research'' (TOR) follows a dual strategy: - Observation of the chemical processes contributing to the oxygen balance directly in the atmosphere; - Establishment of a validated data base for model calculations. Both tasks require simultaneous measurements of a wide range of chemical and meteorological components. In the case of the investigation of the chemical processes, it is also desirable to measure the free radicals directly involved in ozone production. In the project described, a measuring station was set up. For a period of two years and a half, continuous measurements were made of ozone and its chemical precursors (NO, NO_2, NO_y, VOC, CO), as well as other photooxidants (H_2O_2 and organic hydroperoxides, organic nitrates), the photolysis frequency of NO_2, and meteorological parameters (wind, temperature, moisture, aerosols). The station was located on the Schauinsland mountain in the southern Black Forest, at the edge of the ...

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Geological, geophysical, thermal, petrophysical and hydrological data available for the East Mesa hydrothermal system that are pertinent to the construction of a computer model of the natural flow of heat and fluid mass within the system are assembled and correlated. A conceptual model of the full system is developed and a subregion selected for quantitative modeling. By invoking the Boussinesq approximation, valid for describing the natural flow of heat and mass in a liquid hydrothermal system, it is found practical to carry computer simulations far enough in time to ensure that steady-state conditions are obtained. Initial calculations for an axisymmetric model approximating the system demonstrate that the vertical formation permeability of the deep East Mesa system must be very low (k/sub v/ approx. 0.25 to 0.5 md). Since subsurface temperature and surface heat flow data exhibit major deviations from the axisymmetric approximation, exploratory three-dimensional calculations are ...

International Nuclear Information System (INIS)

In the present investigation the performance of digital data acquisition (DA) and analogue data acquisition (AA) systems are compared in neutron-induced fission experiments. The DA results are practically identical to the AA results in terms of angular-, energy- and mass-resolution, and both compare very well with literature data. However, major advantages were found with the digital techniques. DA allows for a very efficient #alpha#-particle pile-up correction. This is important when considering the accurate measurement of fission-fragment characteristics of highly #alpha#-active actinide isotopes relevant for the safe operation of Generation IV reactors and the successful reduction of long-lived radioactive nuclear waste. In case of a strong #alpha#-emitter, when applying the #alpha#-particle pile-up correction, the peak-to-valley ratio of the energy distribution was significantly improved. In addition, DA offers a very flexible expanded off-line analysis and ...

Energy Technology Data Exchange (ETDEWEB)

Architecture of hydrocarbon-bearing sandstone reservoirs of the Paleocene Fort Union Formation in the Wind River basin, Wyoming, was studied using lithofacies, grain size, bounding surfaces, sedimentary structures, internal organization, and geometry. Two principal groups of reservoirs, both erosionally based and fining upward, consist of either conglomeratic sandstone or sandstone lithofacies. Two types of architecture were recognized in conglomeratic sandstone reservoirs: (1) heterogeneous, multistacked, lenticular and (2) homogeneous, multiscoured, wedge-sheet bodies. Three types of architecture were recognized in sandstone reservoirs: (3) heterogeneous, multistacked, elongate; (4) homogeneous, multilateral, lenticular; and (5) homogeneous, ribbon-lensoid bodies. Conglomeratic sandstone reservoirs in the southern and southwestern parts of the basin suggest deposition in gravel-bedload fluvial systems influenced by provenance uplift of the Granite and southern Wind River mountains. ...

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Two series of diffusion tests were performed to examine the degradation of dichloromethane (DCM) as it diffuses through clay. The first series showed the use of a synthetic leachate with no significant initial bacterial population diffusing through a plug of intact clay; there was an induction period of 95--135 d, during which diffusion was as expected in the absence of degradation, followed by a second stage, where degradation occurred with an apparent half-life of less than 55 d at a temperature of 24 C. The second series of tests examined the diffusion of an actual leachate from the Keele Valley Landfill (KVL) (which provided both nutrients and a source of bacteria), through a compacted clay. In these tests, the induction period was reduced to 40--60 d, after which the apparent half-life was 20 d or less at 27 C. The diffusion coefficient for DCM was approximately 8 {times} 10{sup {minus}10} m{sup 2}/s, with partitioning coefficient K{sub d} = 1.5 cm{sup 3}/g. ...

International Nuclear Information System (INIS)

In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer on the silicon ...

Science.gov (United States)

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and ...

International Nuclear Information System (INIS)

A compact, quasi-4? position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the ?-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement ...

Energy Technology Data Exchange (ETDEWEB)

By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. Excellent irradiation uniformity and a ...

Energy Technology Data Exchange (ETDEWEB)

This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are ...

Energy Technology Data Exchange (ETDEWEB)

In the present study, models of key chemical processes governing the compositions of the tapped metal from the cupola on the basis of physico-chemical fundamentals have been developed. As evident from the literature survey, the investigations conducted in the past have focused their attention on one phenomenon at a time; for example, a particular chemical reaction, measurement of gas composition or the temperature distribution inside a cupola. Notwithstanding the importance of these studies and their contribution toward the understanding of cupola operation, mathematical models of key chemical processes and their interdependence must be investigated to obtain a complete insight into the various interlinked phenomena occurring inside a cupola. For example, the oxidation of the metallic charge leads to the formation of iron oxide which influences the final content of elements such as silicon, manganese and carbon. The processes considered in this study are oxidation ...

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

We investigate a new texturization technique for crystalline silicon solar cells with sodium carbonate (Na{sub 2}CO{sub 3}) solutions. We show the dependence of the hemispherical surface reflectance on solution temperature, the etching time and the Na{sub 2}CO{sub 3} concentration. Furthermore, we investigate what element in Na{sub 2}CO{sub 3} solution influences the texturing for reducing the texturing time. As a result of experiments, we find it possible to get low reflectance in a shorter texturing time by the addition of NaHCO{sub 3}. The size of texture becomes smaller by the addition of NaHCO{sub 3} but the etching rate does not change. We conclude carbonic ion and/or its compound seems to play an important role as the initiator of pyramidal structure. This texturing method is cost effective because there is no need of expensive IPA, and the surface reflectance is reduced sufficiently in a short time. This method is promising for a large-scale production of ...

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ratio.-Si{sub 3}N{sub 4} ...

International Nuclear Information System (INIS)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO_2. As shown by the investigations of a study of the anodic behavior of Fe_4_0Ni_4_0P_1_4B_6 and Fe_4_0Ni_3_8Mo_4B_1_8, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but without the boron. The authors note that ...

Energy Technology Data Exchange (ETDEWEB)

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near surface region.

International Nuclear Information System (INIS)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

International Nuclear Information System (INIS)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

International Nuclear Information System (INIS)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...

International Nuclear Information System (INIS)

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the ...

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated ...

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop ...

Science.gov (United States)

Stream temperature is an important physical characteristic of headwater streams that plays a critical role in the presence and health of juvenile salmonids. Headwater stream temperature was documented in two geomorphic settings on the Kenai Peninsula, Alaska, focusing on the variation in temperature induced by diffuse groundwater discharge and variable air temperature. Eighteen headwater stream reaches were studied in four watersheds, with 11 drainageway sites and seven discharge-slope sites. In drainageway sites, low-gradient streams flow through broad valleys with groundwater-fed fen wetlands; in discharge-slope sites, high-gradient streams flow through narrow valleys with groundwater-fed slope wetlands. At all 18 sites, hourly stream temperatures were measured for one year. At one drainageway and one discharge-slope site, groundwater temperatures, stream stages, and groundwater heads in the local groundwater flow systems were also measured ...

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

International Nuclear Information System (INIS)

A thermodynamic analysis of the behaviour of Alloy 800 in helium based atmospheres relevant to the High Temperature Gas Cooled Reactor indicates that, depending upon the precise gas composition, oxidation and carburisation, or carburisation alone may be expected. The prime influence appears to be the moisture level. The morphology and structure of the reaction products are discussed. It is shown that the 'reactive' elements chromium, manganese, titanium and silicon are concentrated in the oxide scale which is normally duplex in structure. Aluminium oxide is formed at grain boundaries and in an internal oxidation zone together with titanium and sometimes silicon. In carburising conditions, mixed titanium-chromium carbides are formed. When this occurs, intergranular penetration is maximised. Weight gain data are assessed and briefly described and a tentative model for the mechanism of corrosion of Alloy 800 in HTR helium is proposed. Areas for ...

British Library Electronic Table of Contents (United Kingdom)

Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...

International Nuclear Information System (INIS)

The thermal transformation of Al-base icosahedral phases was studied in-situ by real time neutron powder diffraction. Different compositions have been selected in order to vary the initial phase morphology and change the neutron scattering contrast between species. Alloys with low silicon and large aluminium contents produce first the orthorhombic O-Al_6Mn modification. In alloys with larger silicon content, the #alpha#-AlMnSi cubic phase appears soon after the beginning of the transformation but is still preceeded by O-Al_6Mn. Depending on compositions, the crystallization of the icosahedral phase is controlled either by the diffusion of Al through its interface with the residual fcc aluminium or that of Si within the bulk. The results are discussed in the light of current structural models. (author) 40 refs., 14 figs., 3 tabs.

International Nuclear Information System (INIS)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

Energy Technology Data Exchange (ETDEWEB)

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

Energy Technology Data Exchange (ETDEWEB)

The subscale Varestraint test has been used to determine the relative hot cracking susceptibility of the fusion zone in four commercial heats of alloy 800. Although all four heats were susceptible to cracking, one heat exhibited a significant increase in cracking relative to the other three. Optical metallography revealed that nearly all the cracking was localized along fusion zone grain boundaries. Microprobe analysis of the grain boundaries detected high concentrations of titanium, silicon, and niobium resulting from partitioning during solidification. The fusion zone hot cracking mechanism in alloy 800 involves the complex interaction of titanium, silicon, niobium, and carbon along the solidification boundaries. SEM and Auger analyses of the hot crack fracture surfaces revealed the presence of (Ti, Nb)-rich carbides, suggesting that these particles precipitate from the liquid which solidifies last on the fracture surface. 23 references.

Energy Technology Data Exchange (ETDEWEB)

A solid layer artificial pollution test was carried out to study the pollution performance of a new type of hybrid station post insulator used in suspension and tensile high voltage transmission lines. The structure of the separated silicone rubber shed and porcelain core hybrid insulator was shown. The new insulator showed excellent pollution performance under both HVAC and HVDC conditions. It also exhibited excellent aging performance in artificial aging tests. The mechanical strength of the hybrid insulator was also better than normal composite insulators. Another advantage revealed was the fact that separated silicone rubber sheds and porcelain core hybrid post insulators are easier to manufacture than normal porcelain post insulators and other hybrid insulators. 5 refs., 6 tabs., 1 fig.

Energy Technology Data Exchange (ETDEWEB)

During the recrystallization by solid-phase-epitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, we propose that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing.

Energy Technology Data Exchange (ETDEWEB)

Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.

Science.gov (United States)

Using the infrared spectroscopy method, we have studied the effect of thermal dehydration (under vacuum and in air) and treatment with water vapor on the acid centers of very high silicon zeolites of the ZSM type. We have shown that dehydration under vacuum and in air completely and irreversibly removes the OH groups at 1120/sup 0/K, while treatment with water vapor removes these groups at 770/sup 0/K. The Lewis acid centers of dehydrated zeolites (represented by two types of centers) are more heat-stable than the Bronsted acid centers, but the vapor treatment at 1020/sup 0/K leads to the disappearance of the Lewis acid centers. In this work, we discuss the reasons for destruction of the acid centers of the zeolites under different treatment conditions.

British Library Electronic Table of Contents (United Kingdom)

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200?mm and 300?mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of ...

Energy Technology Data Exchange (ETDEWEB)

A data analysis based on an artificial neural network classifier is proposed to identify cosmic ray antiprotons detected with the CAPRICE silicon-tungsten imaging calorimeter against electron background in the energy range 1.2-4.0 GeV. A set of new physical variables, describing the events inside the calorimeter on the base of their different patterns, are introduced in order to discriminate between hadronic and electromagnetic showers. The ability of the artificial neural network classifier to perform a careful multidimensional analysis gives the possibility to identify antiprotons with an electron rejection 408{+-}85 (stat) at 95.0{+-}0.2 (stat)% of signal detection efficiency. The high accuracy achieved by this method improves substantially the efficiency in the evaluation of the cosmic ray antiproton spectrum. (orig.).

International Nuclear Information System (INIS)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

International Nuclear Information System (INIS)

Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.