On Boron Diffusion in MgF{sub 2}
The MgF{sub 2} monocrystals were irradiated at room temperature with 390 keV B{sup +} ions up to the fluence of 10{sup 16} cm{sup -2}. The irradiated samples were (isochronally and isothermally) annealed in high vacuum at the temperatures 200 deg. C, 300 deg. C, 400 deg. C, 500 deg. C, 600 deg. C and 700 deg. C for the times ranging from 2-100 hours. After each annealing step, the boron depth distribution was determined using the neutron depth profiling technique. As implanted, the depth distributions of boron exhibited standard Gaussian-like forms, but the evaluated profile parameters, R{sub P} = 960 nm and {delta}R{sub P} = 140 nm, were higher than those calculated using the SRIM code (R{sub P} = 870 nm and {delta}R{sub P} = 115 nm). Annealing at temperatures up to 400 deg. C did not change the depth profiles. Annealing at 600 deg. C, however, led to a one-way gradual transfer of ...
2009-03-10
H2/Ar and vacuum annealing effect of ZnO thin films deposited by RF magnetron sputtering system
British Library Electronic Table of Contents (United Kingdom)
The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The ...
2010-01-01
Investigations of microstructure of thin TbFeCo films by high-resolution electron microscopy
International Nuclear Information System (INIS)
High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.
Electrical and structural properties of ion-implanted and post-annealed silicide films
Energy Technology Data Exchange (ETDEWEB)
The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to ...
1982-05-01
Electrical and structural properties of ion-implanted and post-annealed silicide films
International Nuclear Information System (INIS)
The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature ...
International Nuclear Information System (INIS)
The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min ...
2007-09-01
We study from a critical perspective several quantum-electrodynamic phenomena commonly related to vacuum electromagnetic (EM) fluctuations in complex media. We compute the resonance-shift, the spontaneous emission rate, the local density of states and the van-der-Waals-Casimir pressure in a dielectric medium using a microscopic diagrammatic approach. We find, in agreement with some recent works, that these effects cannot be attributed to variations on the energy of the EM vacuum but to variations of the dielectric self-energy. This energy is the result of the interaction of the bare polarizability of the dielectric constituents with the EM fluctuations of an actually polarized vacuum. We have found an exact expression for the spectrum of these fluctuations in a statistically homogeneous dielectric. Those fluctuations turn out to be different to the ones of normal radiative modes. It is the latter that ...
2009-01-01
Strong laser fields as a probe for fundamental physics
Upcoming high-intensity laser systems will be able to probe the quantum-induced nonlinear regime of electrodynamics. So far unobserved QED phenomena such as the discovery of a nonlinear response of the quantum vacuum to macroscopic electromagnetic fields can become accessible. In addition, such laser systems provide for a flexible tool for investigating fundamental physics. Primary goals consist in verifying so far unobserved QED phenomena. Moreover, strong-field experiments can search for new light but weakly interacting degrees of freedom and are thus complementary to accelerator-driven experiments. I review recent developments in this field, focusing on photon experiments in strong electromagnetic fields. The interaction of particle-physics candidates with photons and external fields can be parameterized by low-energy effective actions and typically predict characteristic optical signatures. I perform first estimates of ...
2008-01-01
Kapitza conductance of the (100) surface of copper
International Nuclear Information System (INIS)
Measurements of the Kapitza conductance to liquid helium II across the (100) surface of single crystals of copper are presented. The temperature range of these measurements was 1.6-- 2.1 K. The sample surfaces were subjected to several different treatments. Some surfaces were cleaned by low-energy argon ion bombardment, annealed in an ultrahigh-vacuum system, and preserved under vacuum until purified liquid helium was admitted. Other surfaces were intentionally damaged by machining and/or exposure to the atmosphere. The conductance after these latter treatments was found to be about a factor of three higher than that of the more ideally cleaned and annealed surfaces, and a significant difference in the temperature dependence of the conductance was also observed. Conductances were reproducible for similarly treated surfaces and correlated with surface damage determined by x-ray diffraction. The ...
Thermal stability of nanocomposite CrC/a-C:H thin films
International Nuclear Information System (INIS)
The thermal stability of low-friction Me-C/a-C:H coatings is important for their potential applications in the tool and automotive industry. Recently we showed that CrC _x/a-C:H coatings prepared by unbalanced magnetron sputtering of a Cr target in Ar + CH_4 glow discharges exhibit a nanocomposite structure where metastable fcc CrC nanocrystals are encapsulated by an a-C:H phase. Here, we present the structural evolution of these nanocomposite CrC/a-C:H coatings during annealing. High-temperature X-ray diffraction in vacuum and differential scanning calorimetry (DSC) combined with thermo-gravimetric analysis in Ar atmosphere indicate decomposition of the formed metastable fcc CrC phase and subsequent formation of Cr_3C_2 and Cr_7C_3 and structural transformation of the a-C:H matrix phase towards higher sp"2 bonding contents at temperatures above 450 deg. C. Combined DSC and mass spectrometer analysis as well as elemental profiling after ...
2007-05-07
Magnetic properties of FePt nanodots formed by a self-assembled nanodot deposition method
International Nuclear Information System (INIS)
Fe_5_0Pt_5_0 nanodots dispersed in a SiO_2 film (Fe_5_0Pt_5_0 nanodot film) were formed by a self-assembled nanodot deposition (SAND) method in which Fe_5_0Pt_5_0 and SiO_2 are cosputtered in a high vacuum rf magnetron sputtering equipment. Fe_5_0Pt_5_0 pellets are laid on a SiO_2 target in a sputtering chamber to form the Fe_5_0Pt_5_0 nanodot film in the SAND method. The size and density of Fe_5_0Pt_5_0 nanodot were controlled by changing the ratio of the total area of Fe_5_0Pt_5_0 pellets to that of SiO_2 target. The Fe_5_0Pt_5_0 nanodot size decreases and its density increases when the ratio decreases. As-deposited Fe_5_0Pt_5_0 nanodots self-assembled to a face-centered-cubic phase of single-crystal structure. The Fe_5_0Pt_5_0 nanodot films were annealed to evaluate the nanodot size controllability, the magnetic anisotropy, and the thermal stability. Fully ordered L1_0 face-centered-tetragonal Fe_5_0Pt_5_0 nanodots with high ...
2006-08-07
Energy Technology Data Exchange (ETDEWEB)
Fe-Cr-Mn stainless steel is one of the candidate materials for the 1`st wall materials and structural applications of fusion reactor as regards reduced radioactivation properties than Fe-Cr-Ni austenitic stainless steels. This report deals with the effects of annealing and aging heat treatment on the microstructure, mechanical properties and corrosion resistance of Fe-Cr-Mn alloys varying Mn and W contents, which were made using vacuum high frequency induction furnace. Increasing Mn contents, austenite phase was increased, and maximum .epsilon. martensite phase was formed at about 21% Mn. W-addition made small amount of ferrite phase in the matrix, and the ferrite contents were increased with raising annealing temperature. Increased Mn contents reduced tensile stress and yield stress but increased the elongation. W-addition raised the high temperature tensile properties. The variation of Mn contents had no influenced on ...
1996-07-01
International Nuclear Information System (INIS)
As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO_3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed ...
2007-01-24
Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon
Energy Technology Data Exchange (ETDEWEB)
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model ...
2004-02-01
Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon
International Nuclear Information System (INIS)
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. ...
2004-02-01
Study on the solid state reaction between bilayered Pd/Au films and silicon substrates
British Library Electronic Table of Contents (United Kingdom)
Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...
2006-01-01
Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides
International Nuclear Information System (INIS)
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
Magnetic properties of Fe-Co-Mo-Cu-B nanocrystalline ribbons with stressing surfaces
British Library Electronic Table of Contents (United Kingdom)
Magnetic properties of Fe-Co-Mo-Cu-B alloy system with Co up to 26at.% were investigated. After proper thermal treatment, the nanocrystalline grain remains tiny, the density hardly increases, but the room-temperature saturation attains 1.5T mainly due to a high enough Curie temperature. The generally observed slant hysteresis loops point to ribbon surfaces, which stress the ribbon interior and induce a specific magnetoelastic contribution to hard-ribbon-axis magnetic anisotropy even after vacuum annealing. The effect does not come from cobalt but rather from the lack of silicon. Partial removal of the surfaces resulted in a decrease of the loop tilt.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
We have developed a kinetic Monte Carlo (kMC) simulator that links atomic migration and binding energies determined primarily from first principles calculations to macroscopic phenomena and laboratory time scales. Input for the kMC simulation is obtained from a combination of ab initio planewave pseudopotential calculations, molecular dynamics simulations, and experimental data. The simulator is validated against an extensive series of experimental studies of the diffusion of B spikes in self-implanted Si. The implant energy, dose, and dose rate, as well as the detailed thermal history of the sample, are included. Good agreement is obtained with the experimental data for temperatures between 750 and 950 C and times from 15 to 255 s. At 1050o C we predict too little diffusion after 105 s compared to experiment: apparently, some mechanism which is not adequately represented by our model becomes important at this temperature. Below 1050o C, the kMC simulation produces ...
1998-12-16
Structure of human insulin monomer in water/acetonitrile solution
Energy Technology Data Exchange (ETDEWEB)
Here we present evidence that in water/acetonitrile solvent detailed structural and dynamic information can be obtained for important proteins that are naturally present as oligomers under native conditions. An NMR-derived human insulin monomer structure in H{sub 2}O/CD{sub 3}CN, 65/35 vol%, pH 3.6 is presented and compared with the available X-ray structure of a monomer that forms part of a hexamer (Acta Crystallogr. 2003 Sec. D59, 474) and with NMR structures in water and organic cosolvent. Detailed analysis using PFGSE NMR, temperature-dependent NMR, dilution experiments and CSI proves that the structure is monomeric in the concentration and temperature ranges 0.1-3 mM and 10-30 deg. C, respectively. The presence of long-range interstrand NOEs, as found in the crystal structure of the monomer, provides the evidence for conservation of the tertiary structure. Starting from structures calculated by the program CYANA, two different molecular dynamics simulated ...
2008-01-15
Polysilicon thin film transistors fabricated on low temperature plastic substrates
Energy Technology Data Exchange (ETDEWEB)
We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}
1999-07-01
British Library Electronic Table of Contents (United Kingdom)
A tertiary structure of recombinant A22^G-B31^K-B32^R-human insulin monomer (insulin GKR) has been characterized by ^1H, ^1^3C NMR at natural isotopic abundance using NOESY, TOCSY, ^1H/^1^3C-GHSQC, and ^1H/^1^3C-GHSQC-TOCSY spectra. Translational diffusion studies indicate the monomer structure in water/acetonitrile (65/35vol.%). CSI analysis confirms existence of secondary structure motifs present in human insulin standard (HIS). Both techniques allow to establish that in this solvent recombinant insulin GKR exists as a monomer. Starting from structures calculated by the program CYANA, two different refinement protocols used molecular dynamics simulated annealing with the program AMBER; in vacuum (AMBER_VC), and including a generalized Born solvent model (AMBER_GB). From these calculation...
2011-01-01
Interaction of energetic beams with metals and semiconductors - a computational approach
International Nuclear Information System (INIS)
In a vacuum insulator, the narrow electron beam emitted from the cathode impinges on the anode and raises its temperature and also may produce high thermal stress. This high thermal stress, in conjuction with the surface electrostatic pressure may rupture the surface and detach particles from it. In this thesis, the interaction of high energy electron and laser beams with metals and semiconductors is investigated. The differential equations governing the physical processes involved in the interaction are solved by the finite element method. Effects of beam penetration into the material, variable beam reflectance at the surface, finite beam size and dependence of material properties on temperature are accounted for. The two-phase moving boundary problem, also known as the Stefan problem, is solved by an enthalpy formulation of the heat equation. Material deformation by thermal stresses caused by high temperature gradients and electrostatic forces induced by space ...
1984-01-01
Epitaxial stabilization of MnO(111) overlayers on a Pd(100) surface
International Nuclear Information System (INIS)
The growth of epitaxial MnO(100) and MnO(111) layers on Pd(100) surface has been investigated by spot-profile analysis low-energy electron diffraction, dynamic atomic force microscopy, photoemission and high-resolution electron energy loss spectroscopy, and density functional theory. We have found that despite the large lattice mismatch to the Pd(100) substrate, the MnO(100) layers are kinetically stabilized at low temperatures (?350 deg. C) and at oxygen pressures between 2x10-7 and 5x10-7 mbar. Annealing in ultrahigh vacuum at 650 deg. C or, alternatively, deposition of manganese metal in oxygen pressure -7 mbar causes the transformation of the MnO(100) to a polar MnO(111) surface, which is decorated by triangular pyramids with (100) side facets. It is suggested that the growth of MnO(111) layers is energetically preferred over MnO(100) due to the epitaxial stabilization at the metal-oxide interface.
2007-06-01
Current trends in ion implantation
Energy Technology Data Exchange (ETDEWEB)
As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing ...
2001-07-01
Energy Technology Data Exchange (ETDEWEB)
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. {copyright} {ital 1996 American ...
1996-01-01
International Nuclear Information System (INIS)
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5x10"1"3 cm"-"2 Si into (001)Si, followed by a high temperature (815 degree C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the open-quote open-quote+1 close-quote close-quote model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. copyright 1996 American Institute of Physics.
Towards Quantum Superposition of Living Organisms
The most striking feature of quantum mechanics is the existence of superposition states, where an object appears to be in different situations at the same time. Up to now, the existence of such states has been tested with small objects, like atoms, ions, electrons and photons, and even with molecules. Recently, it has been even possible to create superpositions of collections of photons, atoms, or Cooper pairs. Current progress in optomechanical systems may soon allow us to create superpositions of even larger objects, like micro-sized mirrors or cantilevers, and thus to test quantum mechanical phenomena at larger scales. Here we propose a method to cool down and create quantum superpositions of the motion of sub-wavelength, arbitrarily shaped dielectric objects trapped inside a high--finesse cavity at a very low pressure. Our method is ideally suited for the smallest living organisms, such as viruses, which survive under low vacuum pressures, ...
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
A shock wave appears when the release of accumulated energy is instantaneous. For instance, it accompanies gunpowder explosion, electric discharge, laser beam convergence, collision of high-speed objects, release of high-pressure gas, and supersonic flight. The shock wave research center of Institute of Fluid Science, Tohoku University, is engaged in researches to elucidate the basics of various shock wave phenomena and to apply the fruit to engineering, science, and medicine. In this report, some examples of recent application studies at the center are described, and the trend of shock wave researches in the future is introduced. The ultimate state of the stagnation point of a nozzle flow simulating a reentry into the atmosphere is produced by shock wave compression in a free piston shock tube which is a ground-borne experimental apparatus. Los Alamos National Laboratory, U.S., succeeded in generating metallic hydrogen of a crystalline structure by subjecting ...
1999-03-15
International Nuclear Information System (INIS)
Full text: It was recently-established for hexagonal barium ferrite-industrially important magnetically hard material that refinement of the crystallite dimensions into the nanoscale regime, typically #<=# 10 nm, leads after heat treatment at temperatures 800-1000 deg C to significant coercivity increase of up to 6.5 kOe (#approx#3-4 times) with saturation magnetisation values of 50-55 emu/g (#approx#95% of bulk at room temperature). High-energy mechanochemical processing has been applied to prepare nanostructural (nanocrystalline-amorphous) composites. High resolution electron microscopy studies reveal that the enhancement of the final magnetic properties was due to formation of magnetically noninteracting #approx#l,#mu#m Ba-ferrite particles with 5-10 nm amorphous surface layer - depending on annealing parameters. Similar situation was established also for ball milled strontium ferrite (SrFe_1_2O_1_9) powders where short annealing 4 h at ...
Optical Phenomena in Computer Vision,
... Accession Number : ADA152970. Title : Optical Phenomena in Computer Vision,. Corporate Author : ROCHESTER UNIV ...
1984-03-01
Energy Technology Data Exchange (ETDEWEB)
Fuel irradiation leads to a swelling resulting from the formation of gaseous (Kr, Xe) or solid fission products which are found either in solution or as solid inclusions in the matrix. This phenomena has to be evaluated to be taken into account in fuel cladding Interaction. Fuel swelling was studied as a function of burn up by measuring the corresponding cell constant evolution by X-Ray diffraction. This study was realized on Mixed Oxide Fuels (MOX) irradiated in a Pressurized Water Reactor (PWR) at different burn-up for 3 initial Pu contents. Lattice parameter evolutions were followed as a function of burn-up for the irradiated fuel with and without an annealing thermal treatment. These experimental evolutions are compared to the theoretical evolutions calculated from the hard sphere model, using the fission product concentrations determined by the APPOLO computer code. Contribution of varying parameters influencing the unit cell value is ...
1995-07-01
Energy Technology Data Exchange (ETDEWEB)
This thesis is concerned with the crystallisation behaviour of polymers near to a free surface or a buried interface. The properties of polymers are expected to differ significantly near to an interface (either with air or another polymer), due to the contributions of (a) chain configurations induced at the interface, and (b) different mobilities between interfacial regions and the bulk of the sample. For a semi-crystalline polymer, properties such as the degree of crystallinity and the crystallisation kinetics may be enhanced near to a free surface. Grazing incidence x--ray diffraction (GIXD) is used to investigate such effects in poly(ethylene terphthalate) (PET), showing that a lower crystallisation temperature is obtained at the surface, and the crystallisation kinetics are faster at the surface for all temperatures. It is proposed that in thin films of PET, this surface-induced ordering provides nucleation sites for crystallisation in the bulk. GIXD is also used to investigate the ...
2002-07-01
Vacuum structures in Hamiltonian light-front dynamics
Energy Technology Data Exchange (ETDEWEB)
Hamiltonian light-front dynamics of quantum fields may provide a useful approach to systematic nonperturbative approximations to quantum field theories. The authors investigate inequivalent Hilbert-space representations of the light-front field algebra in which the stability group of the light front is implemented by unitary transformations. The Hilbert space representation of states is generated by the operator algebra from the vacuum state. There is a large class of vacuum states besides the Fock vacuum which meets all the invariance requirements. The light-front Hamiltonian must annihilate the vacuum and have a positive spectrum. Relations are exhibited of the Hamiltonian to the nontrivial vacuum structure. 30 refs.
1994-03-01
Requirements and guidelines for NSLS experimental beam line vacuum systems: Revision A
Energy Technology Data Exchange (ETDEWEB)
Requirements are provided for NSLS beam line front ends and vacuum interlocks. Guidelines are provided for UHV beam line vacuum systems, including materials, vacuum hardware (pumps, valves, and flanges), acoustic delay lines and beam line fast valves, instrumentation, fabrication and testing, and the NSLS cleaning facility. Also discussed are the design review for experimenters' equipment that would be connected to the NSLS and acceptance tests for any beam line to be connected with the ring vacuum. Also appended are a description of the acoustic delay line as well as the NSLS vacuum standards and NSLS procedures. (LEW)
1986-10-01
International Nuclear Information System (INIS)
Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation and further annealing on composition, ...
Damage process and luminescent characteristics in silica glasses under ion irradiation
International Nuclear Information System (INIS)
Full text of publication follows: Understanding the dynamic irradiation effects on silica glasses is important for developing the diagnostic systems used in fusion and fission environments. While fundamental defects having an un-pared electron such as the E' center have been extensively studied, the neutral oxygen deficiency defects have been insufficiently clarified for lack of the detection methods. The ion induced luminescence is one of the probes that can be used to detect non-paramagnetic defects, and to observe creation and annihilation behavior dynamically. In the present study, we examined the characteristics of the ion induced luminescence such as energy, fluence flux and temperature dependence of the luminescence efficiency to analyze damage process quantitatively. Samples of SiO2 glasses were commercially available fused and synthesized silica glasses, produced by Toshiba Ceramics, Co. Ltd.. A thin films of SiO2 deposited on a Si wafer was used to determine the luminescence ...
2007-12-10
Vacuum instability and tachyons: comments on a paper by Zeldovich
International Nuclear Information System (INIS)
It is shown that vacuum instabilities possibly arising because of tachyons do not contradict any experimental evidence, and therefore that no objection against tachyon existence can be found even on this ground. (Auth.).
Cold vacuum drying facility design requirements; FINAL
International Nuclear Information System (INIS)
This document provides the detailed design requirements for the Spent Nuclear Fuel Project Cold Vacuum Drying Facility. Process, safety, and quality assurance requirements and interfaces are specified.
The effect of annealing parameter on corrosion resistance of Zircaloy-2
International Nuclear Information System (INIS)
The effects of equal #SIGMA#Ai for different combinations of the annealing temperature and annealing time on corrosion resistance and evolution of precipitates of Zircaloy-2 were investigated. Nodular corrosion resistance in the out-of-pile corrosion test was degraded with increasing #SIGMA#Ai only when it was increased by extending the annealing time at 894 K but did not depend on #SIGMA#Ai which was increased by raising the annealing temperature for a constant annealing time of 2.5 h. Extensive observation and micro-analysis of precipitates by analytical electron microscope (AEM) suggested the cause of degradation of nodular corrosion resistance to be the remarkable increase in volume fraction of Si-containing precipitates such as Zr_3Si and Zr_2Si, which were observed more frequently in large #SIGMA#Ai only when it was increased by extending the annealing ...
Study of nanocrystallization in FINEMET alloy by active screen plasma nitriding
International Nuclear Information System (INIS)
The nanocrystallization process of amorphous Fe_7_3_._5Si_1_3_._5B_9Nb_3Cu_1 was investigated by active screen plasma nitriding (ASPN) treatment at temperatures ranging from 410 "oC to 560 "oC for 3 h in two gas mixtures of 75% N_2-25% H_2 and 25% N_2-75% H_2 at 5 mbar atmosphere. The amorphous ribbons were then annealed under vacuum at the same time and temperatures mentioned above. The structure of the samples was analyzed using various techniques such as X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). Microhardness measurements, electrical resistivity and Vibrating Sample Magnetometer (VSM) were used to study mechanical, electrical and magnetic properties of the samples, respectively. It was observed that the ASPN treatment leads to finer grain size and higher crystalline volume fraction and modifies the structural features of Fe(Si) phase. The Fe(Si) lattice parameter for the nitrided ...
2010-02-18
Fusion zone microstructure and porosity in electron beam welds of an #alpha# + #beta# titanium alloy
International Nuclear Information System (INIS)
The effect of electron beam welding parameters on fusion zone (FZ) microstructure and porosity in a Ti-6.8 Al-3.42 Mo-1.9 Zr-0.21 Si alloy (Russian designation VT 9) has been investigated. It has been observed that the FZ grain width increased continuously with increase in heat input when the base metal was in the #beta# heat-treated condition, while in the #alpha# + #beta# heat-treated base metal welds, the FZ grain width increased only after a threshold energy input. The difference is attributed to both the weld thermal cycle and the pinning effect of equiaxed primary alpha on grain growth in the heat-affected zone (HAZ) of #alpha# + #beta# heat-treated base metal. Postweld heat treatment (PWHT) in the subtransus and supertransus regions did not alter the columnar grain morphology in the FZ, possibly due to the lack of enough driving force for the formation of new grains by the breaking up of the columnar grains and grain boundary movement for grain growth. The highest porosity was ...
1999-03-01
Vacuum container for use in a thermonuclear device
International Nuclear Information System (INIS)
Purpose: To enable the use of a vacuum container under a relatively high temperature or a high level radioactive dose. Constitution: Vacuum sealing materials for use in a vacuum container are made of resins such as polyimide and polyamide. The sealing materials are joined to the both surfaces of a plate-like insulator by means of adhesives or sealants, or the sealing materials are joined between two plate-like insulators by means of adhesives or sealants. They are situated within grooves of both of flanges, which are clamped tightly by insulation bolt and nut. Since the vacuum sealing materials are joined to the insulator by means of the adhesives or sealants, the reliability of the vacuum sealing can be improved without impairing the electrical insulation. The resin of the vacuum sealing material can be used for the radiation dose up to 10"8 rad, temperature up ...
1982-04-30
Ignition Phenomena in Developmental, Stick Propellant ...
... TEMPERATURE, PRESSURE MEASUREMENT, GUN CHAMBERS, COMPACTING, COMBUSTIBLE CARTRIDGE CASES, FLASH RADIOGRAPHY ...
1984-07-01
Deforestation: Environmental impact and research needs
The status of research on environmental problems that are produced by the phenomena of global deforestation is examined.
1983-01-01
Energy Technology Data Exchange (ETDEWEB)
This two-volume reference uses many equations to provide detailed information on atomic and nuclear decay phenomena.
1983-01-01
LCLS XTOD Tunnel Vacuum System (XVTS)
Energy Technology Data Exchange (ETDEWEB)
The vacuum system of the XVTS (X-Ray Vacuum Transport System) for the LCLS (Linac Coherent Light Source) XTOD (X-ray Transport, Optics and Diagnostics) system has been analyzed and configured by the Lawrence Livermore National Laboratory's NTED (New Technologies Engineering Division) as requested by the SLAC/LCLS program. The system layout, detailed analyses and selection of the vacuum components for the XTOD tunnel section are presented in this preliminary design report. The vacuum system was analyzed and optimized using a coupled gas load balance model of sub-volumes of the components to be evacuated. Also included are the plans for procurement, mechanical integration, and the cost estimates.
2005-11-04
High temperature properties of ceramics in the SiAlON system
International Nuclear Information System (INIS)
A series of SiAlON materials with a cordierite-based matrix were annealed for different lengths of time to cause crystallization of the glass phase. Their fracture toughness, hardness, and elastic modulus were measured from room temperature up to 1100"0C. The fracture toughness generally decreased with temperature. Short time annealing raised toughness at lower temperatures, while further annealing lowered it back to the value for as-hot pressed materials. At higher test temperatures annealing had no effect on toughness. This annealing behavior is significantly different from that previously reported in the system SaAlON-YAG. Hardness decreased monotonically with temperature for all samples. Both hardness and the elastic modulus were not affected by the annealing treatment. At elevated temperatures appreciable scatter of modulus results allowed only a rough ...
High resolution electron microscopy study of as-prepared and annealed tungsten-carbon multilayers
International Nuclear Information System (INIS)
A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500 degrees C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period.As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions.
Annealing behavior of radiation damages in metal-silicides
International Nuclear Information System (INIS)
The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).
A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)
International Nuclear Information System (INIS)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. The relations of the enhanced diffusion to residual defects and lattice restoration have been studied in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150 deg C (or 1050 deg C) for 1s. The defect density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Allmost a 'complete' annealing of displacemet damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150 deg C in the time ranging from 12 to 20s. the mechanism of lattice ...
Annealing, lattice disorder and non-Fermi liquid behavior in UCu4Pd
Energy Technology Data Exchange (ETDEWEB)
The magnetic and electronic properties of non-Fermi liquid UCu{sub 4Pd} depend on annealing conditions. Local structural changes due to this annealing are reported from UL{sub III}- and Pd K-edge x-ray absorption fine-structure measurements. In particular, annealing decreases the fraction of Pd atoms on nominally Cu 16e sites and the U-Cu pair-distance distribution width. This study provides quantitative information on the amount of disorder in UCu{sub 4Pd} and allows an assessment of its possible importance to the observed non-Fermi liquid behavior.
2002-07-30
Radiation-annealing hardening of vanadium
International Nuclear Information System (INIS)
A study is made of the mechanical properties of vanadium irradiated with fast neutrons up to dose 8.6.10"-"4 dpa, as a function of the temperature of post-radiation annealing. The radiation-annealing hardening (RAH) effect is observed at 300"oC, in agreement with previous studies. It is established for the first time that RAH is accompanied by fall in ductility. A phenomenological model is described which explains the dependence of RAH on radiation dose and temperature, as well as on the content of chemically active alloying impurities. (author).
Radiation-annealing hardening of vanadium
International Nuclear Information System (INIS)
Mechanical properties of vanadium, irradiated with fast neutrons up to 8.6x10"-"4 dpa depending on postirradiation annealing temperature, are studied. It is shown that radiation-annealing hardening (RAH) is observed at 300 deg C, which agrees with earlier performed studies. It is first stated that RAH is accompanied by plasticity decrease. Phenomenological model permitting to explain RAH dependence on irradiation temperature and dose and also on content of chemically active alloying impurities is suggested.
A cryostat is described that was developed for irradiating a number of small metal specimens with a high beamcurrent of heavy particles at liquid nitrogen temperature. The specimens, which are mounted on a block, are taken out of the cryostat after irradiation and subsequently annealed in a temperature bath. The progress of annealing is followed by measuring the change in electrical resistivity of the specimens in liquid helium. (auth)
1964-01-01
Effect of rapid thermal annealing on radiation hardening of MOS devices
International Nuclear Information System (INIS)
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.
1995-07-17
British Library Electronic Table of Contents (United Kingdom)
Annealing of magnetostrictive Metglas foils, subsequently incorporated into laminated Metglas/Pb(Zr, Ti)O3 magnetoelectric (ME) composites, is shown to result in improved magnetic properties, as well as ME coefficients. Annealing of the foils at 350 ?C resulted in partial crystallization, without oxidation or magnetic cluster formation that would reduce the magnetization. Laminate composites made with these annealed Metglas foils had improved ME coefficients.
2011-01-01
vehicles including the H2-A rocket and the space shuttle. .... The vacuum can's main function is to provide a high vacuum so that the science experiment and its sensors ... EMI-shielded power conversion from the incoming ISS power supply. 4. ...
Yttrium Oxides in Vacuum-Plasma-Sprayed CoNiCrAlY ...
... Accession Number : ADD141533. Title : Yttrium Oxides in Vacuum-Plasma- Sprayed CoNiCrAlY Coatings,. Descriptive Note : Journal Article,. ...
1989-06-01
Memory effect in air in the presence of vacuum breakdown mechanism
Investigation of memory effects in air at 0.7 mbar pressure in the presence of vacuum electrical breakdown mechanism has been performed in this paper. The memory effect has been followed using the time delay method.
2008-07-01
Vacuum-plasma treatment induced modification of the surface of high-speed steel cutting tools
International Nuclear Information System (INIS)
The possibility of surface modification of high-speed steel cutting tool by means of vacuum-plasma treatment including ion nitriding in gas plasma followed by the deposition of wear resistant (Ti, Al)N coatings in metal-gas plasma of a vacuum arc discharge is studied. The regularities of nitrided layer formation and the structure of these layers under various operation conditions of cutting tool are investigated. Optimum conditions of vacuum-plasma treatment providing the best wear resistance of cutting are determined
Vacuum Packaging for Microelectromechanical Systems ...
... more than expected in developing a unique bond strength measurement protocol that is important for a wide range of bond strength measurements. ...
2002-10-01
International Science & Technology Center (ISTC)
Development of Method and Technical Project of the Plant for Thermo-Vacuum Desorption of Tritium Oxide (HTO) from the Environmental Samples
HIGH VOLTAGE BREAKDOWN STUDY. ADDENDUM: SOME ...
... The nature of the vacuum breakdown mechanism presents just such a problem and the relative significance or total absence of several processes ...
1968-10-01
Evolution of a vacuum shell in the Friedmann-Schwarzschild world
International Nuclear Information System (INIS)
The method of an effective potential is used to investigate the possible types of evolution of vacuum shells in the Friedmann-Schwarzschild world. Such shells are assumed to emerge during phase transitions in the early Universe. The possible global geometries are constructed for the Friedmann-Schwarzschild worlds. Approximate solutions to the equation of motion of a vacuum shell have been found. The conditions under which the end result of the evolution of the vacuum shells under consideration is the formation of black holes and wormholes with baby universes inside have been found. The interior of this world can be a closed, flat, or open Friedmann universe.
2008-08-01
A Procedure for the separation of sub-microgram quantities of lead and bismuth by vacuum evaporation
International Nuclear Information System (INIS)
... bismuth chlorides bismuth 207 cadmium chlorides efficiency evaporation high
Reynolds Number Effects in Transonic Flow
... of drag measurements with the AGARD Nozzle Afterbody ... are discussed separately from flows with a ... bubbles introduce typical flow phenomena that ...
1988-12-01
Femtosecond Photonics: Fundamental Phenomena and ...
... concentrated on the construction of switches using fiber ... been chosen for a switch realized in ... of these techniques using acousto-optic modulators or ...
1992-02-10
The Reduction of TED in Ion Implanted Silicon
International Nuclear Information System (INIS)
The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit ...
2008-11-03
Vacuum system pump down analysis
Energy Technology Data Exchange (ETDEWEB)
My assignment on the SP-100 Vacuum Vessel Vacuum System Team was to perform a transient pump down analysis for the vacuum vessel that will house the SP-100 reactor during testing. Pump down time was calculated for air and helium. For all cases the proposed vacuum system will be able to pump down the vessel within the required time. The use of a larger rotary piston pump (DUO250) improves the pump down time by 35 minutes and therefore should be considered. The 6-inch duct for the roughing line is optimal, however, because all cases are well below the 24 hour time frame, the 4-inch duct is sufficient. The use of the single turbomolecular pump during pump down is sufficient. A pump down with helium in the vessel and a helium inleakage delays the time to achieve the base pressure marginally and is acceptable.
1990-08-01
Embedded systems for vacuum control at PEFP
International Nuclear Information System (INIS)
Development of a front end system for a high energy proton accelerator is in progress at Korea Atomic Energy Research Institute (KAERI) for basic science and industrial applications. The proper vacuum components has been installed and operated successfully between ion source and RFQ. The reliable operation of the accelerator has been completed at vacuum system in the high and ultra high vacuum range under operating conditions. Proper control system for the vacuum instruments, based on PC operated by Windows, has been designed and constructed by control group at PAL. As PC operated by windows with inherent instability does not proper, embedded system can be replaced for reliable operation system, such as VME system operated by vxWorks.
2005-05-26
International Nuclear Information System (INIS)
Vacuum glazing consists of an evacuated space between two sheets of glass. Vacuum glazing has a large effect on energy savings in houses and buildings. Vacuum glazing can achieve higher insulating performance than conventional insulated glazing. Nippon Sheet Glass has successfully developed conventional vacuum glazing. In this study we investigated an advanced form of vacuum glazing. Its thermal insulation ability is equivalent to 100 mm thick glass wool thermal insulation. This vacuum glazing contained a SnO_2:F low emissivity surface. The influence of the residual gas in a vacuum space on heat flow is important to performance. For long-term thermal stability, it is very important to maintain vacuum stability. To understand this better, we studied the behavior of outgassing from the inside glass surfaces exposed to an ...
2005-06-15
International Nuclear Information System (INIS)
This study is concerned to the perforation phenomena of the oblique dual-plate by projectile. Experiment and simulation related to that was carried out. the variables considered in this phenomena include the electrolytic zinc coated steel sheet and carbon steel rod. In the former, the confirmation and projectile velocity possible phenomena of real phenomena is done, the latter, the effect of parameter such as time-step and grid space length is analyzed by using the three-dimensional Lagrangian explicit time-integration finite element code, HEMP. This code use the eight node hexahedral elements and in this study, Von-Mises Criteria is used as the strength model, Mie-Gruneisen is as the Equation of State. The simulation was performed by contrast with the experiment. Through the calibration of the parameter of Lagrangian code, reasonable result was approached.
2004-11-03
REQUIREMENTS AND GUIDELINES FOR NSLS EXPERIMENTAL BEAM LINE VACUUM SYSTEMS-REVISION B.
Energy Technology Data Exchange (ETDEWEB)
Typical beam lines are comprised of an assembly of vacuum valves and shutters referred to as a ''front end'', optical elements to monochromatize, focus and split the photon beam, and an experimental area where a target sample is placed into the photon beam and data from the interaction is detected and recorded. Windows are used to separate sections of beam lines that are not compatible with storage ring ultra high vacuum. Some experimental beam lines share a common vacuum with storage rings. Sections of beam lines are only allowed to vent up to atmospheric pressure using pure nitrogen gas after a vacuum barrier is established to protect ring vacuum. The front end may only be bled up when there is no current in the machine. This is especially true on the VUV storage ring where for most experiments, windows are not used. For the shorter wavelength, ...
1999-05-01
International Nuclear Information System (INIS)
Post-irradiation annealing was used to help identify the role of radiation-induced segregation (RIS) in irradiation-assisted stress corrosion cracking (IASCC) by preferentially removing dislocation loop damage from proton-irradiated austenitic stainless steels while leaving the RIS of major and minor alloying elements largely unchanged. The goal of this study is to better understand the underlying mechanisms of IASCC. Simulations of post-irradiation annealing of RIS and dislocation loop microstructure predicted that dislocation loops would be removed preferentially over RIS due to both thermodynamic and kinetic considerations. To verify the simulation predictions, a series of post-irradiation annealing experiments were performed. Both a high purity 304L (HP-304L) and a commercial purity 304 (CP-304) stainless steel alloy were irradiated with 3.2 MeV protons at 360 deg. C to doses of 1.0 and 2.5 dpa. Following irradiation, ...
2002-04-01
International Nuclear Information System (INIS)
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction ...
2005-02-15
Randomization of heavily damaged regions in annealed low energy Ge{sup +}-implanted (0 0 1)Si
Energy Technology Data Exchange (ETDEWEB)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-15
Randomization of heavily damaged regions in annealed low energy Ge"+-implanted (0 0 1)Si
International Nuclear Information System (INIS)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-01
Nanostructure of Si-Ge near-surface layers produced by ion implantation and laser annealing
International Nuclear Information System (INIS)
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)
2001-09-23
International Nuclear Information System (INIS)
Formation of the soft magnetic nanostructure in amorphous Fe_1_4Ni_4_0Zr_7B_1_2 alloy due to heat treatment is studied by the Moessbauer, differential scanning calorimetry, and X-ray diffraction techniques. Annealing at temperatures 520-580 "oC leads to the formation of extremely soft nanocrystalline alloy as revealed by the rf-Moessbauer measurements. The superparamagnetic behaviour was observed for the alloy annealed at 620-640 "oC. At higher annealing temperatures good soft magnetic properties deteriorate. (author)
2001-09-23
Energy Technology Data Exchange (ETDEWEB)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1997-11-01
International Nuclear Information System (INIS)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1996-12-02
A new method for the analysis of infrared stimulated luminescence data from potassium feldspars
International Nuclear Information System (INIS)
A new method is described for the analysis of high precision pulse annealing data obtained using IRSL measurements on potassium feldspars using a Risoe reader. Presenting the data as the percentage of the signal lost per annealing phase permits more detailed comparisons to be made between samples. In addition, it is possible to directly compare the temperatures at which the TL and IRSL signals are released, thus giving information about the relationship between them. This method of analysis is applied to pulse annealing data for natural, irradiated, preheated and IR bleached aliquots. (author).
1993-07-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
1985-08-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
International Nuclear Information System (INIS)
We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
2005-11-07
International Nuclear Information System (INIS)
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)
2011-07-01
British Library Electronic Table of Contents (United Kingdom)
For an ultrafine grain ferrite/cementite (UGF/C) steel, the Charpy impact energy was measured at temperatures from 373K to 4.2K, and tensile tests were carried out at temperatures between 323K and 77K. For the steel with annealed microstructure, the ductile-to-brittle transition appearance temperature (DBTT) was lower than the Charpy transition temperature (CTT). With increasing annealing time at 873K, the DBTT and the CTT increased, and the DBTT approached the CTT. The DBTT decreased with decreasing effective grain size. The effective grain size correlated to the grain size of the larger grain size peak in the distribution of grains with {100} planes. The annealed microstructures had higher yield strength for equivalent toughness (including upper shelf energy, DBTT and CTT) compared to th...
2011-01-01
International Nuclear Information System (INIS)
... kov (Ukraine) INIS-UA--158 488 p. MATERIALS SCIENCE annealing creep
2010-09-06
Influence of annealing on the microstructure of commercial Mg alloy AZ31 after mechanical forming
International Nuclear Information System (INIS)
The microstructure of commercial rolled magnesium alloy AZ31B (nominal composition Mg-3Al-0.9Zn-0.15Mn in wt.%) was investigated with the help of light microscopy, electron backscatter diffraction (EBSD) and X-ray diffraction technique after annealing in the temperature range from room temperature (RT) to 400 deg. C. Tensile tests at RT were performed to show the influence of the microstructure on mechanical properties. Static recrystallization (SRX) was observed during annealing of as-received alloy at and above 150 deg. C. Twins play an important role during SRX and serve as nucleation sites and preferred paths for growth of grains. The strong basal texture caused by rolling was weakened by SRX. Significant differences in the stress strain curves were observed for as-received and annealed specimens.
2006-09-25
Grain refinement on AZ31 magnesium alloy by highly strained and annealed method
Energy Technology Data Exchange (ETDEWEB)
Grain refinement in AZ31 magnesium alloy has been attempted by hot-rolling and annealing process. Specimens were solution heat treated at 673 K for 36 ks, then hot-rolled at 423-773 K with total reduction of 20-80% by multi pass process. The rolled specimens were annealed at 473-673 K for 3.6 ks. Grain sizes after the solution heat treatment were about 20 to 150 {mu}m. After hot-rolling at 573 K and annealing at 473 K, grain sizes decreased into about 5 to 10 {mu}m. Suppression of grain growth by pinning due to precipitates was observed by transmission electron microscopic observations. (orig.)
2004-07-01
International Nuclear Information System (INIS)
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated dopants produced during ...
Crystal Chemistry of Ceramic/Mineral Systems
... 1. Reeber, RR, Kusy, RP, Yu, N. and Chu, WK " Formation of a Solid Lubricant in Boron Carbide by Nitrogen Ion Implantation and Laser Annealing ...
1992-12-08
International Nuclear Information System (INIS)
Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).
8 - NASA Technical Reports Server
Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...
Solid state alkali metal-halogen cell
Energy Technology Data Exchange (ETDEWEB)
A solid electrolyte cell comprises an alkali metal anode, e.g. lithium, a halogen-containing organic polymer cathode and a solid elecrolyte between the anode and the cathode. The cathode comprises iodine-containing vacuum-cyclised polyacrylonitrile, and the solid electrolyte is preferably lithium iodide and halogen-free vacuum-cyclised polyacrylonitrile. This patent also discloses the use of isotactic polyacrylonitrile, a method of making a cathode comprising iodine-containing vacuum-cyclised polyacrylonitrile, and novel methods of making the solid elecrolyte cells described.
1988-04-26
Mercury vacuum cleaner operational test and evaluation
Energy Technology Data Exchange (ETDEWEB)
The Dental Investigation Service, USAFSAM, Brooks AFB, has outlined the need for a vacuum unit to be used in the Air Force dental clinics. The unit must be capable of effectively picking up mercury and at the same time not redistribute mercury vapors throughout the dental clinic during normal operations or mercury-spill situations. The Dental Investigation Service selected the MRS-3, Minuteman Mercury Recovery System, product of American Cleaning Equipment Corporation as the mercury vacuum to be used for T E. The USAF OEHL/ECH was requested by the Dental Investigation Service to perform the T E on the MRS-3 for possible health hazards due to exposures of mercury vapors.
1981-03-01
International Nuclear Information System (INIS)
During the 2007 Niigataken Chuetsu-oki earthquake, strong ground motion with the peak acceleration of 680 cm/s/s which was larger than that of the empirical prediction was recorded at the base mat of the No.1 reactor building of Kashiwazaki-Kariwa Nuclear Power Station (NPS). Furthermore, in the Kashiwazaki-Kariwa NPS, over twice difference of 680 vs. 322 cm/s/s of peak acceleration between the No.1 and the No.6 reactor buildings was observed on the base mat. From the results of recent research, it is suggested that the deep sedimentary layers can be one of the important factors to elucidate these phenomena. In this study, at first, the applicability of microtremor array measurements for estimation of deep S-wave velocity structure (#approx#Vs=3 km/s layer) are discussed. Vertical microtremors were observed in three arrays at the Kashiwazaki-Kariwa NPS with the maximum station spacings of 3.04 km, 1.49 km and 0.75 km, respectively. The Rayleigh wave phase velocity ...
2010-05-01
Vacuum distillation refining and recycling of magnesium alloys
Energy Technology Data Exchange (ETDEWEB)
Purification parameters of the vacuum distillation process for AM50A and AZ31B magnesium alloy were studied. The vacuum distillation tests were kept at 580 C to 620 C up to 10 h under a vacuum pressure of about 1 Pa. The purification ratio for AM50A magnesium alloy increases with increasing the purification time. The chemical compositions of materials deposited purifying at 580 C for AM50A magnesium alloy almost satisfy the values for pure magnesium specified by JIS standard specification. The chemical compositions of deposited materials at 600 C for AZ31B magnesium alloy satisfy the values specified by the standard specification except for Zn. (orig.)
2003-07-01
Three generation vacuum oscillations and the solar neutrino problem
We investigate the solar neutrino problem in the scenario of three generation neutrino oscillation hypothesis, taking into account other phenomenological constraints to the neutrino mixing and mass parameters.
1994-01-01
British Library Electronic Table of Contents (United Kingdom)
Environmental scanning electron microscopy (ESEM) allows the examination of hydrated and dried specimens without a conductive metal coating which could be advantageous in the imaging of biological and medical objects. The aim of this study was to assess the performance and benefits of wet-mode and low vacuum ESEM in comparison to high vacuum scanning electron microscopy (SEM) using the choroid plexus of chicken embryos as a model, an organ of the brain involved in the formation of cerebrospinal fluid in vertebrates. Specimens were fixed with or without heavy metals and examined directly or after critical point drying with or without metal coating. For wet mode ESEM freshly excised specimens without any pre-treatment were also examined. Conventional high vacuum SEM revealed the characterist...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
A miniature x-ray source utilizing a hot filament cathode. The source has a millimeter scale size and is capable of producing broad spectrum x-ray emission over a wide range of x-ray energies. The miniature source consists of a compact vacuum tube assembly containing the hot filament cathode, an anode, a high voltage feedthru for delivering high voltage to the cathode, a getter for maintaining high vacuum, a connector for initial vacuum pump down and crimp-off, and a high voltage connection for attaching a compact high voltage cable to the high voltage feedthru. At least a portion of the vacuum tube wall is fabricated from highly x-ray transparent materials, such as sapphire, diamond, or boron nitride.
2000-01-01
British Library Electronic Table of Contents (United Kingdom)
This paper presents the results of the degree of irreversible changes of dielectric properties of vacuum circuit breakers with CuCr and CuBi contacts before and after short-circuit breaking operations. Tests of dielectric properties were performed on four different types of switching vacuum chamber with RMF electrodes in the form of a spiral disk with slots. The paper describes the configuration of measuring system for determining the dielectric properties of circuit breakers with DC, AC and pulse voltage. It also describes the measuring procedure. The results were analyzed and the experimentally obtained random variable breakdown voltage is found to belong to Weibull distribution in all cases. Based on these results it was found that for the vacuum circuit breakers with CuCr contacts and ...
2011-01-01
International Nuclear Information System (INIS)
A high-average power (kW) infrared (IR) free-electron laser (FEL) is currently being commissioned for the Jefferson Laboratory FEL User Facility. The IR FEL is driven by a unique superconducting rf linac which is recirculated to recover electron beam power that is not radiated in the FEL. The design and installation of the vacuum system for the FEL involved particular attention to minimizing particulate contamination which could cause problems with the superconducting acceleration cavities and the high power FEL optics. Particulate contamination levels of all vacuum components were monitored during the cleaning process using laser scattering. Cleaning, transport, and installation procedures were developed to minimize the contamination of the complete system. We will summarize a data base we compiled of particulate contamination levels of the various components installed in the FEL vacuum system.
1999-03-01
A variational approach to the Gross-Neveu model
Energy Technology Data Exchange (ETDEWEB)
The authors solve the instability of perturbative vacuum of Gross-Neveu model. They use a variational method. The analysis is nonperturbative as it uses only equal time commmutator/anticommutator algebra.
1988-01-01
Physical phenomena in Z-pinch plasma of impulse plasma deposition process
International Nuclear Information System (INIS)
In the present paper we propose a model of physical phenomena behind the front face of the electrodes in an impulse plasma accelerator. The model is based on the results of recent experimental observations and measurements. It correlates plasma dynamics with mechanism of phenomena in a column of pinching plasma. On the contrary to the previous model the current one suggests the series of relatively short pulses of metallic ions from the erosion of electrode material. Till now the pinch was treated rather as a nearly continuous source of metallic plasma, feeding the process with ions from the erosion of electrode material. (author)
2001-09-23
Fundamental investigation of duct/ESP phenomena. Final report
Energy Technology Data Exchange (ETDEWEB)
Radian Corporation was contracted to investigate duct injection and ESP phenomena in a 1.7 MW pilot plant constructed for this test program. This study was an attempt to resolve problems found in previous studies and answer remaining questions for the technology using an approach which concentrates on the fundamental mechanisms of the process. The goal of the study was to obtain a better understanding of the basic physical and chemical phenomena that control: (1) the desulfurization of flue gas by calcium-based reagent, and (2) the coupling of an existing ESP particulate collection device to the duct injection process. Process economics are being studied by others. (VC)
1991-10-21
Fundamental investigation of duct/ESP phenomena
Energy Technology Data Exchange (ETDEWEB)
Radian Corporation was contracted to investigate duct injection and ESP phenomena in a 1.7 MW pilot plant constructed for this test program. This study was an attempt to resolve problems found in previous studies and answer remaining questions for the technology using an approach which concentrates on the fundamental mechanisms of the process. The goal of the study was to obtain a better understanding of the basic physical and chemical phenomena that control: (1) the desulfurization of flue gas by calcium-based reagent, and (2) the coupling of an existing ESP particulate collection device to the duct injection process. Process economics are being studied by others. (VC)
1991-10-21
International Nuclear Information System (INIS)
The behaviour of the packaging materials under radiation field has a great importance in radiation processing, because, in most cases, they are finally responsible for the preservation of the beneficent changes achieved in irradiated products. For example, in radiation sterilisation and food irradiation, the packages must preserve the sterilisation, respectively the sanitisation. They must preserve also the physical barrier feature. The radiation effects on plastics were extensively studied in the last decades for nuclear industry and more recently for radiation processing. The two major effects of nuclear radiation on polymeric materials are the degradation and cross-linking. The degradation consists in breaking of macromolecules after interaction with nuclear particles, amplified by the free radicals which persist long periods, especially in crystalline polymers. Oxygen could penetrate the sample and interact with free radicals so that the degradation process continues after the ...
Reduced boron diffusion under interstitial injection in fluorine implanted silicon
International Nuclear Information System (INIS)
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the range of the fluorine ...
2007-12-01
Shock Tunnel Studies of Scramjet Phenomena - NASA Technical Report ...
Kinetic reaction mechanisms have a hierarchical smacture with mechanisms for complex fuels built up on sub-mechanisms for simple fuel molecules ...
Fluid Transport Phenomena in Ocular Epithelia
UK PubMed Central (United Kingdom)
This article discusses three largely unrecognized aspects related to fluid movement in ocular tissues; namely, a) the dynamic changes in water permeability observed in corneal and conjunctival...Full Text Available
2008-03-01
A Cyanobacterial Circadian Clockwork
UK PubMed Central (United Kingdom)
Cyanobacteria have become a major model system for analyzing clock phenomena. The temporal program in this organism enhances fitness in rhythmic environments and is truly global—essentially...Full Text Available
2008-09-09
International Nuclear Information System (INIS)
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)
2005-09-01
International Nuclear Information System (INIS)
In the present paper the progress of optimization of soft magnetic properties have been studied by applying different experimental techniques (magnetic measurements, electric measurements, X-ray analysis, and high-resolution electron microscopy observation). It has been shown that an increase in magnetic permeability after optimization annealing can be mainly attributed to annealing out of microvoids. (author)
2001-09-23
On the theory of transient enhanced diffusion in boron-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
1991-01-01
On the theory of transient enhanced diffusion in boron-implanted silicon
International Nuclear Information System (INIS)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
Manufacture and characterization of Pb(1-x)Sn(x)Te photoconductors
A general account of the properties, growing technology and annealing of lead-tin-telluride single crystals is given. Photoconductors were made for the 8 to 14 micron. spectral range and responsivity, detectivity and spectral response measurements showed satisfactory results. Improvement in the growing and annealing of the single crystals promise good performance in the near future.
1984-03-01
Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing
Energy Technology Data Exchange (ETDEWEB)
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
2006-05-15
Energy Technology Data Exchange (ETDEWEB)
Microstructural evolution due to thermal effects was studied in micro solder joints (55 {+-} 5 {micro}m). The composition of the Sn/Pb solder studied was found to be hypereutectic with a tin content of 65--70 wt%.This was determined by Energy Dispersive X-ray analysis and confirmed with quantitative stereology. The quantitative stereological value of the surface-to-volume ratio was used to characterize and compare the coarsening during thermal cycling from 0--160 C to the coarsening during annealing at 160 C. The initial coarsening of the annealed samples was more rapid than the cycled samples, but tapered off as time to the one-half as expected. Because the substrates to which the solder was bonded have different thermal expansion coefficients, the cycled samples experienced a mechanical strain with thermal cycling. The low-strain cycled samples had a 2.8% strain imposed on the solder and failed by 1,000 cycles, despite undergoing less ...
1998-12-01
Experiments on the formation of the A 15-compounds Nb-Sn and Nb-Ge by ion implantation
International Nuclear Information System (INIS)
Nb_3Sn films (Tsub(c)=17.8 K) were obtained by implantation of Sn"+ ions into Nb films (1500 A thick) after subsequent annealing. The annealing temperature required for the formation of the A15 phase in the implanted films was about 100 K higher than for Nb-Sn sandwich films evaporated at 300 K. The influence of the Sn concentration and of the annealing temperature was studied by measuring the sample resistance. The Nb-Sn compounds formed during the annealing process were analysed by measurements of the Moessbauer-effect of "1"1"9Sn. The implantation method was also used to produce Nb-Ge films with a ratio Ge/Nb approximately 1/3. The Ge-concentration and the temperature of the Nb-target (300-1070 K) were varied. These variations as well as subsequent annealing at 600-850"0C did not lead to superconducting transition temperatures above 8 K. (Auth.).
Energy Technology Data Exchange (ETDEWEB)
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated dopants produced during ...
1993-01-01
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
Energy Technology Data Exchange (ETDEWEB)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the ...
1991-01-01
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
International Nuclear Information System (INIS)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...
Vacuum arc ignition by penning discharge in a strong magnetic field
Energy Technology Data Exchange (ETDEWEB)
Vacuum arc with cathode spots on the cold electrode is widely used as a plasma generator in a such kind of devices like metal ion sources, plasma cathode electron guns, thing films deposition facilities and others. Most vacuum arc devices utilize a high voltage discharge across an insulator surface to provide a trigger plasma which in turn initiates the main arc discharge. Operation of vacuum arc in a repetitively pulsed mode required a stable triggering system for the long time. But with a discharge across the insulators the number of stable pulses is limited by 100,000 or little bit more. The better method for vacuum arc ignition is low pressure discharge. As shown in this paper it is possible to increase the lifetime of the ignition system in 10 times at least, but negative characteristic of this system is a relatively high pressure (about 0.1 mtorr). In some kinds of vacuum arc ...
1995-12-31
> Develoopments which have imporved fuel core quality and reduced production costs are described. These developments in the melting and casting of uranium ingots arei modification of the crucible and knockout-slide assembly, substitution of uncoated crucibles for coated crucibles, and substitution of a one-piece gun barrel mold for a vertically split mold. (N.W.R.)
1961-01-01
Cold Vacuum Drying (CVD) Facility Technical Safety Requirements
Energy Technology Data Exchange (ETDEWEB)
The Technical Safety Requirements (TSRs) for the Cold Vacuum Drying Facility define acceptable conditions, safe boundaries, bases thereof, and management or administrative controls required to ensure safe operation. Controls required for public safety, significant defense-in-depth, significant worker safety, and for maintaining radiological and toxicological consequences below risk evaluation guidelines are included.
1999-12-16
Calcium fluoride window mounting
International Nuclear Information System (INIS)
A technique has been developed for joining a large calcium fluoride crystal to a stainless-steel flange by means of a silver transition ring. The process involves both vacuum brazing using a copper-silver alloy and air brazing using silver chloride. This paper describes the procedure used in fabricating a high-vacuum leak-tight calcium fluoride window assembly.
Algebraic description of perturbation theory in quantum electrodynamics
Energy Technology Data Exchange (ETDEWEB)
An algebraic formulation of the electromagnetic field in which various quantization procedures can be described was chosen to discuss perturbation calculations. It is shown that the Feynman rules and the second order calculation of the self-energy of the electron can be developed on the basis of the Fermi method of quantization. The algebraic approach clarifies the problems in defining the vacuum and other states which are associated with calculations in terms of field algebra operators. It is demonstrated that the vacuum state defined on the field algebra by Schwinger leads to incorrect results in the self-energy calculation.
1982-01-01
Vacuum ultraviolet radiometry of xenon positive column discharges
Energy Technology Data Exchange (ETDEWEB)
In order to judge the potential fluorescent lamp applications of various low-pressure positive column discharges it is necessary to measure the absolute power emitted in the ultraviolet region of the spectrum. For rare-gas discharges the principle emission occurs in the vacuum ultraviolet so that it is difficult to measure the radiant emittance (power per unit area) of the resonance radiation by standard methods. Two independent techniques are discussed for measuring the radiant emittance of positive column discharges in the vacuum ultraviolet. These techniques are used to study xenon positive column discharges at the resonance wavelength of 147 nm. The first method relies on the measurement of the resonance level density by absorption techniques. The effective decay rate of the resonance level is then determined by the simulation of resonance radiation transport. These two quantities are combined to yield the radiant emittance at 147 nm ...
1995-10-01
Jacobi stability of the vacuum in the static spherically symmetric brane world models
International Nuclear Information System (INIS)
We analyze the stability of the structure equations of the vacuum in the brane world models, by using both the linear (Lyapunov) stability analysis, and the Jacobi stability analysis, the Kosambi-Cartan-Chern theory. In the brane world models the four-dimensional effective Einstein equations acquire extra terms, called dark radiation and dark pressure, respectively, which arise from the embedding of the three-brane in the bulk. Generally, the spherically symmetric vacuum solutions of the brane gravitational field equations have properties quite distinct as compared to the standard black hole solutions of general relativity. We close the structure equations by assuming a simple linear equation of state for the dark pressure. In this case the vacuum is Jacobi stable only for a small range of values of the proportionality constant relating the dark pressure and the dark radiation. The unstable trajectories on the brane behave ...
2008-05-15
Design of the ZTH vacuum liner
Energy Technology Data Exchange (ETDEWEB)
The current status of the ZTH vacuum liner design is covered by this report. ZTH will be the first experiment to be installed in the CPRF (Confinement Physics Research Facility) at the Los Alamos National Laboratory and is scheduled to be operational at the rated current of 4 MA in 1992. The vacuum vessel has a 2.4 m major radius and a 40 cm minor radius. Operating parameters which drive the vacuum vessel mechanical design include a 300 C bakeout temperature, an armour support system capable of withstanding 25 kV, a high toroidal resistance, 1250 kPa magnetic loading, a 10 minute cycle time, and high positional accuracy with respect to the conducting shell. The vacuum vessel design features which satisfy the operating parameters are defined. The liner is constructed of Inconel 625 and has a geometry which alternates sections of thin walled bellows with rigid ribs. These composite sections span between ...
1987-01-01
Why the negative corona current in air decreases?
International Nuclear Information System (INIS)
The time dependence of negative corona current I, called by Gagarin like 'relaxing of CV-characteristics', is a observed phenomena. The observed phenomena was explained by two theoretical models considering the ion-molecule and chemical reactions in the negative corona discharges in air, especially the ozone production. In the presented paper the discrepancies of above mentioned models, re-examination the earlier experimental data and presumptions used in models in a light the latest experimentally confirmed facts are discussed.
1996-08-01
Theory of sexes by Geodakian as advanced by Iskrin
In 1960s V.Geodakian proposed a theory that explains sexes as a mechanism for evolutionary adaptation of the species to changing environmental conditions. In 2001 V.Iskrin refined and augmented the concepts of Geodakian and gave a new and interesting explanation to several phenomena which involve sex, and sex ratio, including the war-years phenomena. He also introduced a new concept of the "catastrophic sex ratio." This note is an attempt to digest technical aspects of the new ideas by Iskrin.
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
A review of theoretical and observational research on the magnetopause during 1987-1990. Starting with recent work on magnetic reconnection, the review proceeds to magnetopause surface wave phenomena, including the controversy over the role of solar wind pressure pulses in the coupling process and in the mimicking of flux transfer events signatures, and finishes with the magnetopause structure and associated wave phenomena. Recent advances in computer modeling of the magnetopause and the pertinent processes are also discussed. 108 refs.
1991-01-01
Solar effects on communications
International Nuclear Information System (INIS)
This paper focuses on potential effects of solar phenomena on communication systems used by the electric utility industry. It begins with a discussion of solar phenomena fundamentals and discussion of the interaction between solar emissions and the earth's ionosphere and magnetosphere. It continues with a discussion of the resulting impacts on communication systems including radio, satellite, wireline, fiber optic, and powerline systems and concludes with a discussion of mitigation techniques and a call for observers to report suspected solar impact experiencexperiences.
Observation of DNB phenomena by neutron radiography
Energy Technology Data Exchange (ETDEWEB)
In the design of LWRs, the forecast of critical heat flux (CHF) is important. The existing CHF correlation equations include the arbitrary constants based on experimental data, therefore, their range of application is limited. For advancing the research and development of high conversion LWRs or passive safety reactors, the development of more general CHF forecasting technique has been demanded. In order to elucidate the mechanism of CHF occurrence and construct the general forecasting model based on physical phenomena, the detailed observation of flow phenomena near a heat generation surface is indispensable. The experiment of observing boiling two-phase flow and CHF phenomena by applying neutron radiography technique was carried out. The utilization of neutron radiography in the field of heat-transferring flow is explained. The experimental setup and the experimental method, the experimental conditions, and the results of ...
1994-07-01
Energy Technology Data Exchange (ETDEWEB)
Three model boilers, manufactured to simulate full-size tube sheet crevices, were tested with various secondary side environments. The first was faulted with organics representative of the decomposition of humic acid. The second was faulted with sodium carbonate and sodium hydroxide, while the third was faulted with sodium sulfate and sodium hydroxide. Each model contained seven tubes, which included Alloy 600 in the mill-annealed (MA) and thermally-treated (TT) conditions and Alloy 690 in the thermally-treated condition. Two models contained Alloy 800 tubes in the mill-annealed condition and one had Alloy 800 in the mill-annealed/cold-worked/glass-bead-peened condition. Two different sizes of tubesheet crevices were used in all model boilers. In the organics-faulted boiler, tubes of Alloy 600MA, Alloy 690TT and Alloy 800MA experienced no significant intergranular attack (IGA); however, the Alloy 600TT had intergranular ...
1987-07-01
International Nuclear Information System (INIS)
Three model boilers, manufactured to simulate full-size tube sheet crevices, were tested with various secondary side environments. The first was faulted with organics representative of the decomposition of humic acid. The second was faulted with sodium carbonate and sodium hydroxide, while the third was faulted with sodium sulfate and sodium hydroxide. Each model contained seven tubes, which included Alloy 600 in the mill-annealed (MA) and thermally-treated (TT) conditions and Alloy 690 in the thermally-treated condition. Two models contained Alloy 800 tubes in the mill-annealed condition and one had Alloy 800 in the mill-annealed/cold-worked/glass-bead-peened condition. Two different sizes of tubesheet crevices were used in all model boilers. In the organics-faulted boiler, tubes of Alloy 600MA, Alloy 690TT and Alloy 800MA experienced no significant intergranular attack (IGA); however, the Alloy 600TT had intergranular ...
International Nuclear Information System (INIS)
Low energy (<100 eV) Ar"+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)/sub 1-x/Ge/sub x/ alloys. The films were approx.1.5 #mu#m thick and the average grain size in the metastable state was approx.300 A.
6180-01-01
British Library Electronic Table of Contents (United Kingdom)
We report the fabrication and characterization of glucose-tolerant Raney-platinum cathodes for oxygen reduction in potentially implantable glucose fuel. Fabricated by extraction of aluminum from 1mm thin platinum-aluminum bi-layers annealed at 300^oC, the novel cathodes show excellent resistance against hydrolytic and oxidative attack. This renders them superior over previous cathodes fabricated from hydrogel-bound catalyst particles. Annealing times of 60, 120, and 240min result in approximately 400-550nm thin porous films (roughness factors ~100-150), which contain platinum and aluminum in a ratio of ~9:1. Aluminum release during electrode operation can be expected to have no significant effect on physiological normal levels, which promises good biocompatibility. Annealing time has a dis...
2010-01-01
Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
1985-03-01
International Nuclear Information System (INIS)
Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni_2Si, while Si is the diffusing species in CrSi_2. In Pd_2Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.
Energy Technology Data Exchange (ETDEWEB)
Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.
1985-08-15
Deep-level defects and numerical simulation of radiation damage in GaAs solar cells
Energy Technology Data Exchange (ETDEWEB)
A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).
1991-09-01
Energy Technology Data Exchange (ETDEWEB)
SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of {approximately}2E13cm{sup {minus}2}. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.
1995-12-31
International Nuclear Information System (INIS)
SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of #approx#2E13cm"-"2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.
Atomic scale simulations of arsenic ion implantation and annealing in silicon
International Nuclear Information System (INIS)
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
2004-12-15
Annealing of silicon implanted with arsine and hydrogen ions
Energy Technology Data Exchange (ETDEWEB)
Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)
2003-01-01
International Nuclear Information System (INIS)
Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.
1995-03-20
Energy Technology Data Exchange (ETDEWEB)
As a part of the WE-NET project, the tanker for liquid hydrogen transport was studied. In fiscal 1996, some experiments and numerical analyses were proposed which are necessary to solve technological issues extracted in fiscal 1995 for heat insulation structure. The issue was roughly classified into vacuum and non-vacuum insulation, and their basic functions and required performance were arranged. Boil-off rate of 0.2-0.4%/d was targeted. The insulation system which applies polyurethane form (PUF) to tank surfaces and injects atmospheric N2 gas into the surrounding hold space, could achieve the targeted insulation performance by PUF of 1m in thickness. The system of vacuum panel insulation and atmospheric N2 gas injection into a hold space required the panel of 500mm in thickness because of the large effect of metallic outer panel material. The system of vacuum hold and PUF panels was faced with the ...
1997-03-01
International Nuclear Information System (INIS)
On all steam turbines operating with condensation the air leakage penetrating from the part of the plant which is under vacuum must be eliminated, in order to maintain the vacuum created by physical conditions. In order to attain effective air bleed-off, the water-steam-air mixture is conveyed via the super-cooling bundles in the condenser. In this way the steam partial pressure decreases and the air partial pressure increases at a constant condenser pressure. In this procedure the mixture is supercooled by about 4"0C compared with the saturate steam temperature appertaining to the condenser pressure. The values of volume of air leakage are the result of a year's experience on existing plant. (orig.).
True and measured outgassing rates of a vacuum chamber with a reversibly adsorbed phase
Energy Technology Data Exchange (ETDEWEB)
A pump down model for a vacuum chamber with a reversibly adsorbed phase is presented. The outgassing equation which predicts the variation of coverage at the wall surface of a vacuum chamber with time is derived. Then the measured and the true outgassing rates are defined. The theoretical measured outgassing rate shows only a very weak dependence for pumping speed. This prediction is opposite to the experimental result that the measured outgassing rate depends significantly on pumping speed. It is discussed that the experimental measured outgassing rate must be described as the product of the effective pumping speed and the measured pressure in the pumped chamber, in which the measured pressure is equivalent to the equilibrium pressure of the wall surface described by the equilibrium adsorption isotherm as a function of the shifted surface coverage {theta}-{delta}{theta} by a small coverage {delta}{theta} from the coverage of a pumping point ...
2000-03-01
The Cosmological Constant and Lorentz Invariance of the Vacuum State
One hope to solve the cosmological constant problem is to identify a symmetry principle, based on which the cosmological constant can be reduced either to zero, or to a tiny value. Here, we note that requiring that the vacuum state is Lorentz invariant significantly reduces the theoretical value of the vacuum energy density. Hence, this also reduces the discrepancy between the observed value of the cosmological constant and its theoretical expectation, down from 123 orders of magnitude to 56 orders of magnitude. We find that, at one loop level, massless particles do not yield any contribution to the cosmological constant. Another important consequence of Lorentz symmetry is stabilization of the gravitational hierarchy: the cosmological constant (divided by Newton's constant) does not run as the quartic power of the renormalization group scale, but instead only logarithmically.
2011-01-01
Low-range flowmeters for use with vacuum and leak standards
Energy Technology Data Exchange (ETDEWEB)
Vacuum pressure standards of the orifice-flow type require known gas flows of 10/sup -6/ mol/s (10/sup -2/ atm cm/sup 3//s at 0 /sup 0/C) and less. Known gas flows can also be used to calibrate ''standard'' leaks by comparing the pressures generated when flows from the leak and the flowmeter are alternately passed through a constant conductance. Two constant-pressure, piston displacement flowmeters developed at the National Bureau of Standards are described that can generate flows between 10/sup -6/ and 10/sup -10/ mol/s with an estimated uncertainty of 0.8% to 2%. Comparisons of the flowmeters with alternate calibration techniques, and repeated low-range leak and vacuum gauge calibrations, have been used to confirm the estimated uncertainty and random errors of the flowmeter.
1987-05-01
High-vacuum time-resolved laser-induced incandescence of?flame-generated soot
British Library Electronic Table of Contents (United Kingdom)
We have measured time-resolved laser-induced incandescence of flame-generated soot under high-vacuum conditions (4.1?10?6 mbar) at an excitation wavelength of 532 nm with laser fluences spanning 0.06?0.5 J/cm2. We generated soot in an ethylene/air diffusion flame, introduced it into the vacuum system with an aerodynamic lens, heated it using a pulsed laser with a spatially homogeneous and temporally smooth laser profile, and recorded LII temporal profiles at 685 nm. At low laser fluences LII signal decay rates are slow, and LII signals persist beyond the residence time of the soot particles in the detection region. At these fluences, the temporal maximum of the LII signal increases nearly linearly with increasing laser fluence until reaching a plateau at ?0.18?J/cm2. At higher fluences, th...
2011-01-01
Complexity of chaotic fields and standard model parameters
In order to understand the parameters of the standard model of electroweak and strong interactions (coupling constants, masses, mixing angles) one needs to embed the standard model into some larger theory that accounts for the observed values. This means some additional sector is needed that fixes and stabilizes the values of the fundamental constants of nature. In these lecture notes we describe in nontechnical terms how such a sector can be constructed. Our additional sector is based on rapidly fluctuating scalar fields that, although completely deterministic, evolve in the strongest possible chaotic way and exhibit complex behaviour. These chaotic fields generate potentials for moduli fields, which ultimately fix the fundamental parameters. The chaotic dynamics can be physically interpreted in terms of vacuum fluctuations. These vacuum fluctuations are different from those of QED or QCD but coupled with the same moduli fields as QED and QCD ...
2007-01-01
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
British Library Electronic Table of Contents (United Kingdom)
Effective work function (m,eff) values of Ru gate electrode on SiO2 and HfO2 MOS capacitors were carefully examined and discussed from the viewpoint of an effect of oxygen incorporation in Ru gate electrode on m,eff. Annealing at 400degreeC in the reduction (3%H2) and the oxidation (1%O2) ambient resulted in similar changes in the m,eff of Ru/HfO2/SiO2 and Ru/SiO2 MOS capacitors. Furthermore, the Ru gate MOS capacitor after annealing in the oxidation condition have shown almost the same m,eff value to that of RuO2 gate MOS capacitors. The oxygen concentration in the Ru/HfO2 interface after annealing in oxidizing atmosphere is approximately one order of magnitude higher than that after annealing in reducing atmosphere as confirmed by secondary ion mass spectroscopy analysis. Furthermore, th...
2006-01-01
Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers
International Nuclear Information System (INIS)
We have developed a chemical process for incorporating copper into indium gallium selenide layers with the goal of creating a precursor structure for the formation of copper indium gallium diselenide (CIGS) photovoltaic absorbers. Stylus profilometry, EDX, Raman spectroscopy, XRD and SIMS measurements show that when indium gallium selenide layers are immersed in a hot copper chloride solution, copper is incorporated as copper selenide with no increase in the thickness of the layers. Further measurements show that annealing this precursor structure in the presence of selenium results in the formation of CIGS and that the supply of selenium during the annealing process has a strong effect on the morphology and preferred orientation of these layers. When the supply of Se during annealing begins only once the substrate temperature reaches ? 400 deg. C , the resulting CIGS layers are smoother and have more pronounced preferred ...
2009-02-02
Self-organization of nickel atoms in silicon
British Library Electronic Table of Contents (United Kingdom)
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.
2011-01-01
UK PubMed Central (United Kingdom)
A parallel bundle of transmembrane (TM) alpha-helices surrounding a central pore is present in several classes of ion channel, including the nicotinic acetylcholine receptor (nAChR). We have modeled...Full Text Available
1994-10-01
Method of restoring degraded solar cells
Energy Technology Data Exchange (ETDEWEB)
Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.
1983-01-01
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
Energy Technology Data Exchange (ETDEWEB)
In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a ...
2002-01-01
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
International Nuclear Information System (INIS)
In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative Ostwald ripening ...
2002-01-01
Energy Technology Data Exchange (ETDEWEB)
We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.
2006-05-10
International Nuclear Information System (INIS)
We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous amorphous layer. For sufficiently high ...
2001-06-01
Anomalous phosphorus diffusion in Si during postimplantation annealing
Energy Technology Data Exchange (ETDEWEB)
The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. ...
2001-06-11
British Library Electronic Table of Contents (United Kingdom)
In this paper, we prepared by the sol-gel method alkaline titania catalysts, doped by gelling titanium alkoxide with aqueous solutions containing potassium, rubidium or cesium chlorides. XRD patterns showed that samples annealed at 400 and 600degreeC contained a single crystalline phase, anastase. Specific surface areas were higher in samples annealed at 400degreeC (>100m2/g) than in those annealed at 600degreeC (25m2/g). The weight density of basic sites determined by CO2-TPD drastically diminished in samples treated at 600degreeC. Catalysts were tested for the self-condensation of acetone at 300degreeC; main reaction products were isomesityl oxide, mesityl oxide and mesitylene. Samples annealed at 600degreeC showed lower acetone conversion rate and low formation of mesitylene than that o...
2006-01-01
Integrated Analysis of Environment-driven Operational Effects in Sensor Networks
Energy Technology Data Exchange (ETDEWEB)
There is a rapidly growing need to evaluate sensor network functionality and performance in the context of the larger environment of infrastructure and applications in which the sensor network is organically embedded. This need, which is motivated by complex applications related to national security operations, leads to a paradigm fundamentally different from that of traditional data networks. In the sensor networks of interest to us, the network dynamics depend strongly on sensor activity, which in turn is triggered by events in the environment. Because the behavior of sensor networks is sensitive to these driving phenomena, the integrity of the sensed observations, measurements and resource usage by the network can widely vary. It is therefore imperative to accurately capture the environmental phenomena, and drive the simulation of the sensor network operation by accounting fully for the environment effects. In this paper, we illustrate the ...
2007-07-01
Energy Technology Data Exchange (ETDEWEB)
A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...
1997-07-01
A study on the transient analysis of pipe and restraint due to impact loading
Energy Technology Data Exchange (ETDEWEB)
In this study, experiments were performed for pipe whip phenomena simulation. The analytical method was developed by combining several kinds of elements in ABAQUS computer code, standard version 5.2 . The transient analytical and the experimental results of the pipe whip test using 6 inch diameter pipe and U-shaped restraints are presented. It is shown that the adequate clearance decreases the restraint strains. As the overhang length increased, the maximum strain of restraints decreased. When the impact force increased, the maximum restraint strain increased slightly. The analytical models simulate the experimental impact phenomena very precisely, with slight conservatism. It is verified that the analytical method developed is very suitable to pipe whip phenomena analysis in nuclear power plants. 6 refs., 10 figs., 1 tab.
1995-12-31
Stochastic Optimization Approaches for Solving Sudoku
In this paper the Sudoku problem is solved using stochastic search techniques and these are: Cultural Genetic Algorithm (CGA), Repulsive Particle Swarm Optimization (RPSO), Quantum Simulated Annealing (QSA) and the Hybrid method that combines Genetic Algorithm with Simulated Annealing (HGASA). The results obtained show that the CGA, QSA and HGASA are able to solve the Sudoku puzzle with CGA finding a solution in 28 seconds, while QSA finding a solution in 65 seconds and HGASA in 1.447 seconds. This is mainly because HGASA combines the parallel searching of GA with the flexibility of SA. The RPSO was found to be unable to solve the puzzle.
2008-01-01
Residual stress measurements on a stress relieved Zircaloy-4 weld by neutron diffraction
Energy Technology Data Exchange (ETDEWEB)
The macroscopic stress distribution across an annealed Zircaloy-4 gas tungsten arc weld was measured by neutron time-of-flight diffraction at the SMARTS diffractometer at Los Alamos National Laboratory. The stresses after annealing are about 40% lower than those in the same weld prior to heat treatment. The intergranular strains in the reference coupons, which give the macroscopic stress free lattice spacings, are consistent with the difference in cooling the strongly textured plate and the weakly textured weld.
2006-12-15
Recrystallization during and following hot working of magnesium alloy AZ31
Energy Technology Data Exchange (ETDEWEB)
The microstructures of magnesium AZ31 are examined following hot compression testing and annealing. The grain size, fraction dynamically recrystallized and, in a couple of cases, the crystallographic texture are reported. It was found that the progress of dynamic recrystallization is strongly sensitive to processing conditions but that the dynamically recrystallized grain size was less sensitive to stress than in other metals. It was also found that, for structures containing between 80 and 95% dynamic recrystallization, abnormal grain growth occurs during annealing. The crystallographic texture produced is also sensitive to the deformation conditions. (orig.)
2003-07-01
Energy Technology Data Exchange (ETDEWEB)
The recent definition of a postulated thermal shock accident followed promptly by system repressurization, termed an overcooling or pressurized thermal shock accident, has set a large analysis and research effort into motion. The essential elements are concerned with defining the accident transients, evaluating the instrumentation and controls that cause the postulated accidents, and evaluating the metallurgical and structural mechanics aspects of the reactor vessel with respect to its failure potential. This paper poses the question faced by the Nuclear Regulatory Commission (NRC) for the vessel steel embrittlement, annealing, and surveillance dosimetry facets of this postulated accident and provides information on our plans for study of this problem as well as current status.
1981-10-01
Free electron laser (FEL) annealing of diamond
International Nuclear Information System (INIS)
Free Electron Laser (FEL) with wide wavelength tunability has been developed and used for various applications. We report the structural-changes in P-ion-implanted diamond when we can achieve resonant excitation of the vibrations of specific bonds in the lattice of target (P-C) by using FEL. The change of property was analyzed by SIMS and Raman spectroscopy. After 5.8 #mu#m-FEL irradiation, we observed the crystallization of amorphous structure which was induced by P-ion-implantation. These results indicated the FEL annealing of diamond at room temperature. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)
1998-09-02
Application of high energy ion beam for the control of boron diffusion
Energy Technology Data Exchange (ETDEWEB)
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
2006-01-15
Application of high energy ion beam for the control of boron diffusion
International Nuclear Information System (INIS)
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
2006-01-01
Transient enhanced diffusion of dopants in preamorphized Si layers
Energy Technology Data Exchange (ETDEWEB)
Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops ...
1997-11-01
Transient enhanced diffusion of dopants in preamorphized Si layers
International Nuclear Information System (INIS)
Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops ...
1996-12-02
Thermal annealing effect on optical properties of electrodeposited ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible ...
2008-10-07
Energy Technology Data Exchange (ETDEWEB)
The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline ...
2007-08-15
UK PubMed Central (United Kingdom)
Total thyroidectomy involving the adjacent structures of the trachea can cause tracheal damage such as early tracheal necrosis. The authors describe the first case of anterior tracheal necrosis following...Full Text Available
2012-01-01
Scheme for Entangling Two Distant Cavity Mirrors
International Nuclear Information System (INIS)
A scheme is presented for the generation of entangled states for two cavity mirrors. In the scheme each mirror initially in a vacuum state interacts with a weak coherent field, resulting in a photon-number dependent kick. The detection of a photon leaking from the cavities collapses the two mirrors to an entangled state.
2008-04-15
Radiation resistance of nylon. [Gamma radiation
Energy Technology Data Exchange (ETDEWEB)
Various nylons including nylon 6, nylon 66, nylon 610 and nylon 12 in the forms of fiber and film were irradiated with the gamma-ray from Co-60 at the dose rate of 0.12 Mrad/hr in the atmosphere of oxygen at 7 kg/cm/sup 2/ and at the room temperature. The irradiation in vacuum on the same specimens was performed at 0.5 Mrad/hr. The tensile properties and the gel fraction of the irradiated nylon samples were measured, and the radiation resistance of the nylons against the irradiation at low dose rate was estimated. From the experimental results, it became clear that in the case of irradiation in vacuum, all the nylons were durable to the irradiation of 250 Mrad or more, and nylon 6 was more durable than nylon 12, and in the case of irradiation in pressurized oxygen, the radiation resistance of the nylons decreased to one-tenth as compared with that in vacuum, and contrary to that in vacuum, nylon 12 was ...
1983-12-01
Quantum chaos in the mixmaster universe
International Nuclear Information System (INIS)
A Monte Carlo simulation of the vacuum Bianchi type-IX (mixmaster) cosmology yields a significant correlation between large universe volume and high anisotropy. An analog of the model's chaotic classical behavior is seen in the break up of the universe wave function at large volume into fingers in the corners of the minisuperspace anisotropy potential.
Energy Technology Data Exchange (ETDEWEB)
Progress is reported in fabrication and coating activities being conducted for the weapons program, nuclear test program, nuclear design program, magnetic fusion program, and miscellaneous applications. (DLC)
1984-07-11
Inhibited spontaneous emission by a Rydberg atom
Spontaneous radiation by an atom in a Rydberg state is inhibited by use of parallel conducting planes to eliminate the vacuum modes at the transition frequency. Spontaneous radiation emission is observed to turn off abruptly at the cutoff frequency of the waveguidelike structure, and the natural lifetime is measured to increase by a factor of at least 20.
1985-11-11
Influence of the Atmosphere on a Rubidium Clock's Frequency ...
... Figure 3 shows on-orbit (ie, vacuum) frequency aging rates for Milstar rubidium (Rb) clocks, GPS Block IIR Rb clocks, and GPS Block IIA Rb clocks. ...
2007-11-01
Impregnation mode in wood plastic composite
Bulk monomer MMA was impregnated into simul, a fuel wood of Bangladesh, under vacuum and under normal temperature and pressure conditions in order to compare the mode of impregnation and its effect on various characteristic parameters of wood plastic composites. Methanol (MeOH) was used as the swelling solvent with methylmethacrylate (MMA) at MMA: MeOH = 70:30, v/v. Impregnation of the bulk monomer was very high under vacuum compared to that at normal condition; but the difference of grafting of MMA to the wood cellulose under these two impregnating conditions was much lower as compared to that of the uptakes of impregnating solution MMA + MeOH under these two modes of impregnation. Incorporation of additives to MMA + MeOH has substantially enhanced grafting, tensile strength, bending strength and compression strength of the composite to such an extent that there is virtually very little difference between vacuum ...
1996-12-01
Electrostatic probe vacuum system for TCA BR tokamak
Energy Technology Data Exchange (ETDEWEB)
This paper describes the technical design and performance of the diagnostic system installed in the tokamak TCABR to measure parameters of the plasma edge. The system consists of four Langmuir probes under remote control. (author)
1999-12-01
Dust resuspension and transport modeling for loss of vacuum accidents
Energy Technology Data Exchange (ETDEWEB)
Plasma surface interactions in tokamaks are known to create significant quantities of dust, which settles onto surfaces and accumulates in the vacuum vessel. In ITER, a loss of vacuum accident may result in the release of dust which will be radioactive and/or toxic, and provides increased surface area for chemical reactions or dust explosion. A new method of analysis has been developed for modeling dust resuspension and transport in loss of vacuum accidents. The aerosol dynamic equation is solved via the user defined scalar (UDS) capability in the commercial CFD code Fluent. Fluent solves up to 50 generic transport equations for user defined scalars, and allows customization of terms in these equations through user defined functions (UDF). This allows calculation of diffusion coefficients based on local flow properties, inclusion of body forces such as gravity and thermophoresis in the convection term, and user defined ...
2007-07-01
Dust resuspension and transport modeling for loss of vacuum accidents
International Nuclear Information System (INIS)
Plasma surface interactions in tokamaks are known to create significant quantities of dust, which settles onto surfaces and accumulates in the vacuum vessel. In ITER, a loss of vacuum accident may result in the release of dust which will be radioactive and/or toxic, and provides increased surface area for chemical reactions or dust explosion. A new method of analysis has been developed for modeling dust resuspension and transport in loss of vacuum accidents. The aerosol dynamic equation is solved via the user defined scalar (UDS) capability in the commercial CFD code Fluent. Fluent solves up to 50 generic transport equations for user defined scalars, and allows customization of terms in these equations through user defined functions (UDF). This allows calculation of diffusion coefficients based on local flow properties, inclusion of body forces such as gravity and thermophoresis in the convection term, and user defined ...
2007-10-05
Doublet III vacuum vessel neutral beam armor
The evolution of the Doublet III neutral beam armor is followed from the initial design of a radiation cooled metallic tile to the present actively cooled graphite design. Results of the thermal and stress analyses that dictated the present design are reviewed.
1979-11-01
Direct filtration for recovery of Schistosoma mansoni cercariae in the field
UK PubMed Central (United Kingdom)
The recovery of schistosome cercariae from natural waters has been limited by variations in turbidity and in the accuracy of recovery with different techniques. A modification of the Rowan vacuum paper...Full Text Available
1973-01-01
Critical assessment of the Schroedinger picture of quantum mechanics
Energy Technology Data Exchange (ETDEWEB)
We provide an example in which the Heisenberg and the Schroedinger pictures of quantum mechanics give different results, thus confirming the statement of P.A.M. Dirac that the two pictures may lead to inequivalent results. We consider a one-dimensional nonrelativistic charged harmonic oscillator (frequency {omega}{sub 0} and mass m), and take into account the action of the radiation reaction and the vacuum electromagnetic forces on the charged oscillator. We show that the Heisenberg picture gives the correct value, {Dirac_h}{omega}{sub 0}/2, for the ground state energy of the harmonic oscillator in both cases of classical and quantized vacuum fields. In the case of the Schroedinger picture, considering classical vacuum fields, and using a simple calculation for the classical radiation reaction force that is valid in the limit of large mass (mc{sup 2} >> {Dirac_h}{omega}{sub 0}), we obtain the value ...
2002-12-16
Energy Technology Data Exchange (ETDEWEB)
Additional results using a calorimetric technique for measuring the total hemispherical emittance of pipe surfaces from 400 to 600 K are described. Two different Pyrex pipe enclosures were used, one of 15 cm i.d. and the other of 30 cm i.d. An error analysis showed that the larger diameter Pyrex pipe should have a smaller error, but the difference was negligible for the 4.4-cm test pipe diameter used. Measurements on a short length of a previously-measured pipe agreed with earlier measurements, but only over the temperature range of the measurements. While the technique normally uses a vacuum to minimize nonradiative heat transfer, measurements were done succesfully with an argon atmosphere in a closed system. A nickel-plated pipe, measured first in a vacuum and then in an argon atmosphere, allowed calculation of an effective convective heat-transfer coefficient for use with test pipes of unknown emittances. Measurements done with an atmosphere ...
1981-10-01
A four-block collimator installed on a control table for positioning the alignment reference marks. Designed for use with SPS secondary beams, the collimator operates under vacuum conditions. See Annual Report 1976 p. 121 and photo 7701014.
1977-01-01
Adiabatic interpretation of particle creation in a de Sitter universe
Energy Technology Data Exchange (ETDEWEB)
The choice of vacuum state for a quantum scalar field propagating in a de Sitter spacetime (massive and arbitrarily coupled to the gravitational field) is discussed. The problem of finite-time initial conditions for the mode functions is analyzed, as well as how these determine the vacuum state of the quantum system. The principle guiding the choice of vacuum state is the following: one wants the vacuum contribution to the energy-momentum tensor to contain all the ultraviolet divergent terms, so that the particle creation terms are finite, and covariantly conserved. There is a suitable set of modes (instantaneous adiabatic basis) in which this splitting of the expectation value of the energy-momentum tensor can be carried out. Numerical results are presented for different finite-time initial conditions (m = 0.6, {zeta} = 1/6). The nature of the particle creation effect is described and its relationship ...
1998-06-10
The vacuum preserving Lie algebra of a classical W-algebra
International Nuclear Information System (INIS)
We simplify and generalize an argument due to Bowcock and Watts showing that one can associate a finite Lie algebra (the 'classical vacuum preserving algebra') containing the Moebius sl(2) subalgebra to any classical W-algebra. Our construction is based on a kinematical analysis of the Poisson brackets of quasi-fields. In the case of the W_S"G-subalgebra S of a simple Lie algebra G, we exhibit a natural isomorphism between this finite Lie algebra and G whereby the Moebius sl(2) is identified with S. (orig.).
1993-01-01
Possible influence of vacuum polarization on Q/sub 1//sub //sub s/ in muon catalyzed D-T fusion
Energy Technology Data Exchange (ETDEWEB)
The vacuum polarization splitting of the M-shell states in muonic hydrogen can have a profound influence on the muonit de-excitation cascade in deuterium and tritium targets. The cascade also shows sensitive dependence on the precise rate of transfer processes between certain excited muonic deuterium and tritium atoms. Recent experimental data, where a much greater population of the (d..mu..) qs state (1/sub 1//sub //sub s/) was found than previously predicted, can be explained if the transfer rates from the (d..mu..) M-shell are assumed to be strongly suppressed.
1988-12-27
Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS
British Library Electronic Table of Contents (United Kingdom)
Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.
2011-01-01
Effect of protective coatings on the high-temperature fatigue of heat-resistant alloys
Energy Technology Data Exchange (ETDEWEB)
The fatigue properties of EP539LM alloy with an Al-Nb-Si fused slurry coating and a Co-Cr-Al-Y electron-beam coating are investigated experimentally in vacuum and in air at 900 C. It is found that the protective coatings reduce the fatigue life of the specimens both in vacuum and in air, with the electron-beam coating affecting the fatigue life of the alloy to a lesser degree than the fused slurry coating. The negative effect of the coatings on the fatigue life of the alloy is attributed largely to the properties of the coating material. 7 references.
1986-08-01
Discrete vacuum superselection rule in Wightman theory with essentially self-adjoint field operators
Energy Technology Data Exchange (ETDEWEB)
The main results of earlier work by the author, Sushko, and Khoruzhii describing the algebraic structure of quantum-field systems with (discrete) vacuum superselection rules are generalized to the large class of Wightman theories with essentially self-adjoint field operators (a very strong restriction was imposed on the theory, namely, that the polynomial Op algebra of the Wightman fields /rho/ belongs to the class II, i.e., /rho/ /sub s'/ =/rho/ /sub w'/). It is also shown that the field Op algebra of a Wightman theory with discrete vaccum superselection rule possesses a class II extension.
1986-07-01
Development of new three way valve using vacuum for liquid transfer
International Nuclear Information System (INIS)
The nitric acid solution dissolving nuclear fuel material is transferred with the three way valve called VCV (VCV: vide-casse-vide in Fr.) using vacuum in the Tokai Reprocessing Plant. The initial VCV was not reliable because it had broken with in 1 or 2 years. The cause of failure was damage of the plastic diaphragms in the moving parts. Then, the new VCV valve with stainless-steel bellows was developed. There is no failure in moving parts in 20 years, therefore reliability is significantly improved. (author)
2008-07-01
Constraints on extra dimensions from cosmological and terrestrial measurements
If quantum fields exist in extra compact dimensions, they will give rise to a quantum vacuum or Casimir energy. That vacuum energy will manifest itself as a cosmological constant. The fact that supernova and cosmic microwave background data indicate that the cosmological constant is of the same order as the critical mass density to close the universe supplies a lower bound on the size of the extra dimensions. Recent laboratory constraints on deviations from Newton's law place an upper limit. The allowed region is so small as to suggest that either extra compact dimensions do not exist, or their number is about to be tightly constrained by experimental data.
2001-01-01
Constraints on Extra Dimensions from Cosmological and Terrestrial Measurements
If quantum fields exist in extra compact dimensions, they will give rise to a quantum vacuum or Casimir energy. That vacuum energy will manifest itself as a cosmological constant. The fact that supernova and cosmic microwave background data indicate that the cosmological constant is of the same order as the critical mass density to close the universe supplies a lower bound on the size of the extra dimensions. Recent laboratory constraints on deviations from Newton's law place an upper limit. The allowed region is so small as to suggest that either extra compact dimensions do not exist, or their properties are about to be tightly constrained by experimental data.
2000-01-01
Coke fouling process on the oil refining; Processo de incrustacao por coque no refino do petroleo
Energy Technology Data Exchange (ETDEWEB)
The heavy crude fraction processing is performed under very high vacuum to minimize thermal cracking which cause coke deposition and damage the equipment. The current tendency is to process heavier oil leading to higher process temperatures and consequently to greater fouling. This situation demands better knowledge fouling process by carbonization. This problem is pronounced in the residual gasoil region of a vacuum distillation unit because it obstructs the recirculation circuits and the spray system with serious environmental and economics implications. This paper review the main correlated published work related to coke generation and fouling and presents a discussion about the works. (author)
2004-07-01
A new proof of the Bianchi type IX attractor theorem
Energy Technology Data Exchange (ETDEWEB)
We consider the dynamics toward the initial singularity of Bianchi type IX vacuum and orthogonal perfect fluid models with a linear equation of state. The 'Bianchi type IX attractor theorem' states that the past asymptotic behavior of generic type IX solutions is governed by Bianchi type I and II vacuum states (Mixmaster attractor). We give a comparatively short and self-contained new proof of this theorem. The proof we give is interesting in itself, but more importantly it illustrates and emphasizes that type IX is special, and to some extent misleading when one considers the broader context of generic models without symmetries.
2009-04-07
A new proof of the Bianchi type IX attractor theorem
International Nuclear Information System (INIS)
We consider the dynamics toward the initial singularity of Bianchi type IX vacuum and orthogonal perfect fluid models with a linear equation of state. The 'Bianchi type IX attractor theorem' states that the past asymptotic behavior of generic type IX solutions is governed by Bianchi type I and II vacuum states (Mixmaster attractor). We give a comparatively short and self-contained new proof of this theorem. The proof we give is interesting in itself, but more importantly it illustrates and emphasizes that type IX is special, and to some extent misleading when one considers the broader context of generic models without symmetries.
2009-04-07
A new proof of the Bianchi type IX attractor theorem
We consider the dynamics towards the initial singularity of Bianchi type IX vacuum and orthogonal perfect fluid models with a linear equation of state. The `Bianchi type IX attractor theorem' states that the past asymptotic behavior of generic type IX solutions is governed by Bianchi type I and II vacuum states (Mixmaster attractor). We give a comparatively short and self-contained new proof of this theorem. The proof we give is interesting in itself, but more importantly it illustrates and emphasizes that type IX is special, and to some extent misleading when one considers the broader context of generic models without symmetries.
2009-01-01
Two-Phase Stefan Problem with Interfacial Energy and Entropy.
The classical Stefan theory for the melting of a solid or the freezing of a liquid is too simplistic to describe phenomena such as supercooling, in which a liquid supports temperatures below its freezing point, or superheating, the analog for solids, or d...
1985-01-01
Energy Technology Data Exchange (ETDEWEB)
The erosion phenomena of coastal regions in Italy and in the world is remarkable from the environmental point of view. Are showed activities of mechanical defense and numerical models to solve complex problem.
1996-11-01
Results of two-phase natural circulation in hot-leg U-bend simulation experiments
Energy Technology Data Exchange (ETDEWEB)
In order to study the two-phase natural circulation and flow termination during a small break loss of coolant accident in LWR, simulation experiments have been performed using two different thermal-hydraulic loops. The main focus of the experiment was the two-phase flow behavior in the hot-leg U-bend typical of BandW LWR systems. The first group of experiments was carried out in the nitrogen gas-water adiabatic simulation loop and the second in the Freon 113 boiling and condensation loop. Both of the loops have been designed as a flow visualization facility and built according to the two-phase flow scaling criteria developed under this program. The nitrogen gas-water system has been used to isolate key hydrodynamic phenomena such as the phase distribution, relative velocity between phases, two-phase flow regimes and flow termination mechanisms, whereas the Freon loop has been used to study the effect of fluid properties, phase changes and coupling between ...
1987-01-01
Religion as a Natural Phenomenon
...same sort of handle ? religious that we have on global warming or energy policy or ...other words my claim is that we need to study religion the way we study global warming and all the other really serious phenomena on this planet ...
Psychodynamic Experience Enhances Recognition of Hidden Childhood Trauma
UK PubMed Central (United Kingdom)
BackgroundExperimental psychology has only recently provided supporting evidence for Freud's and Janet's description of unconscious phenomena. Here, we aimed to assess whether specific...Full Text Available
Present status of thermal hydraulic research in severe accident of light water reactors in Japan
International Nuclear Information System (INIS)
Understanding of the thermal hydraulic phenomena is now the key issue in solving the severe accident problems of light water reactors. The Atomic Energy Society of Japan has organized a special committee on the evaluation of the thermal hydraulic phenomena in severe accident. The committee has continued the investigation of present status of thermal hydraulics in severe accident. Industries have completed the detailed implementation of the accident management measures, and industries have established also a self-regulatory document mainly on phase II accident management for the containment design of the future reactors. Present paper reviews the current status of evaluation activity referring to severe accident research in Japan. The phenomena included in this paper are (1) molten core behavior in lower plenum of pressure vessel, (2) fuel-coolant interaction, (3) molten core-concrete interaction, (4) direct containment ...
2000-10-01
N89-20139 - NASA Technical Report Server (NTRS)
REAL ENGINE FLOW SIMULATION. 4 C D - 8 5 - 1 6 9 6 4. FIGURE 2. - COMPLEX FLOW PHENOMENA IN A TURBINE PASSAGE,. SEE TABLE I FOR DESCRIPTION OF NUMBERED FLOW ...
Introduction to Electrical Interfacial Phenomena
Offers comprehensive coverage of the field of electrical double layer (EDL) research. This work discusses theoretical models used with EDL and demonstrates how they can be applied to typically encountered real-world problems including those that must be considered in modern industrial applications.
2010-01-01
Intelligent Motion and Interaction Within Virtual Environments
Typical aircraft types supported include F4-Phantom, Tornado, MiG-29 ...... attempt to develop a theoretical explanation for learning phenomena [16]. ..... perspective, a primary reason for this is that an exponential curve approximates ...
In service inspection for steam generator tubes
International Nuclear Information System (INIS)
In this paper the authors show the means putting in place for examination of steam generators tubes. These means (eddy current probes, ultrasonic testing) associated with a knowledge on degradation phenomena allow mapping controlled tubes and limiting undesirable obturations.
1987-11-24
UK PubMed Central (United Kingdom)
Cleaning and disinfection of open surfaces in food industry premises leave some microorganisms behind; these microorganisms build up a resident flora on the surfaces. Our goal was to explore the phenomena...Full Text Available
2007-05-01
Evidence for modular evolution in a long-tailed pterosaur with a pterodactyloid skull
UK PubMed Central (United Kingdom)
The fossil record is a unique source of evidence for important evolutionary phenomena such as transitions between major clades. Frustratingly, relevant fossils are still comparatively rare, most transitions...Full Text Available
2010-02-07
Components of change in the evolution of learning and unlearned preference
UK PubMed Central (United Kingdom)
Several phenomena in animal learning seem to call for evolutionary explanations, such as patterns of what animals learn and do not learn. While several models consider how evolution should influence...Full Text Available
2009-09-07
Comparison of Mount Saint Helens volcanic eruption to a nuclear explosion. Technical note
Energy Technology Data Exchange (ETDEWEB)
The phenomena and effects of airblast, ground shock, thermal radiation, cratering and ejecta, and debris cloud and deposition from the eruption of Mt. St. Helens were compared to those that would result from a nuclear explosion to determine if phenomena or effects were analogous and thus might provide useful data for military nuclear weapon effects studies. It is concluded that the phenomena are not analogous. In particular, airblast destruction was caused by clouds of ash driven by subsonic winds, rather than by a supersonic shock wave that would be the damage mechanism of a nuclear explosion. Because of the lack of analogy between the eruption and nuclear explosion phenomena, it appears questionable that any of the effects are analogous; therefore, it is unlikely that anything more of military interest can be gained from studying the effects of the eruption. However, key contacts for further ...
1981-01-01
Energy Technology Data Exchange (ETDEWEB)
The use of the focused ion beam (FIB) systems has increased to a high level in recent years. The imaging, milling, and deposition capabilities of the FIB make it the ideal instrument for e.g., site-specific failure analysis, specimen preparation and nano-machining. Ion channelling contrast allows for selective imaging of polycrystalline and polyphase microstructures. In addition, the FIB and CrossBeam registered instruments are unique stand-alone analytical tools. Their vast capabilities have enabled numerous applications into the semiconductor and materials sciences applications. These integrated CrossBeam registered Tools enable the observation and direct control of the FIB operation in real time. In addition to the improved accuracy and resolution the electron beam adds analytical capabilities as STEM, EDS and EBSP to the instruments. To ensure a safe and reliable operation of the instrument, a dedicated vacuum system is needed. This type of instrument combines ...
2005-07-01
Neutron radiography at the University of Michigan's Phoenix Memorial Laboratory
International Nuclear Information System (INIS)
Real-time neutron radiography (RTNR) is rapidly becoming a valuable tool for nondestructive testing and basic research with a wide variety of applications. The Phoenix Memorial Laboratory (PML) at the University of Michigan has developed an RTNR facility and has been using this facility to study several phenomena of interest to researchers in many areas. These phenomena include imaging of the internal fluid flow in gas turbine engine nozzles and coking and debris deposition in several gas turbine nozzles. This paper presents a summary of the technique and facilities involved in these applications.
1990-06-10
Mini-conference on Angular Momentum Transport in Laboratory and Nature
Energy Technology Data Exchange (ETDEWEB)
This paper provides a concise summary of the current status of the research and future perspectives discussed in the Mini-Conference on Angular Momentum Transport in Laboratory and Nature. This Mini-conference, sponsored by the Topical Group on Plasma Astrophysics, was held as part of the American Physical Society's Division of Plasma Physics 2007 Annual Meeting (November 12{16, 2007). This Mini-conference covers a wide range of phenomena happening in fluids and plasmas, either in laboratory or in nature. The purpose of this paper is not to comprehensively review these phenomena, but to provide a starting point for interested readers to refer to related research in areas other than their own.
2008-05-06
Magnetization reversal phenomena and domain wall behaviours in nanostructured magnetic systems
International Nuclear Information System (INIS)
Several recent experiments on micro- (or nano-) structured samples of ferromagnetic materials are introduced. Magnetization reversal phenomena are investigated on submicron wire samples of trilayer structure using the giant magnetoresistance effect. Domain wall movements are sensitively monitored by resistivity measurements and the velocity of propagation is determined. The contribution of domain wall to the resistivity is argued from the results on artificially designed samples of a spring-magnet system. In circular dots of permalloy, the existence of vortex magnetization is confirmed and the reversal of the vortex core magnetization is studied from magnetic force microscopy measurements. (author)
2001-09-23
Large ion beams, fundamentals of generation and propagation
Energy Technology Data Exchange (ETDEWEB)
This book is a compliation and analysis of discussions of phenomena important to ion beams and high perveance ion beams. This text discusses physics essential to research on ion beam generation and propagation and provides some requisite background to understanding the criteria for designing electrodes. Ion sources are categorized in terms of their configurations, and the relationships between various types of sources is developed. Covers collisionless space charge phenomena, collisionless plasmas, collisional effects and the taxonomy of high poissance beams. Chapters also treat the field of intense negative ion beams.
1987-01-01
Critical phenomena in four-component systems
This article examines problems relating to the calculation of the position of regions of limited solubility of components in the liquid state for four-component systems. An approach based on the use of criterion of stability with respect to diffusion for obtaining equations which describe the region of stratification of the liquid phase in a four-component system is used. The authors used a ES-1020 computer to analyze the critical phenomena in Al-In-P-Sb, Al-Ga-In-P, Al-Ga-In-As, and In-Ga-As-P systems. The position of the spinode in the phase diagram of a four-component system is obtained.
1987-06-01
Corrosion and reliability of PWR power plants
International Nuclear Information System (INIS)
Corrosion is increasingly becoming an important factor reducing the reliability of many nuclear power plant components. The significance is evaluated of corrosion phenomena with respect to the reliability of primary circuit components of LWR's, viz., the reactor pressure vessel, primary piping, steam generator, and fuel elements. The mechanism of corrosion phenomena is explained and methods of minimizing their effects are presented. An analysis is made of the needs to solve the corrosion problems of nuclear power plants from the point of view of Czechoslovak producers and research and development activities. International cooperation is reviewed and main problems are formulated on which the solution of corrosion problems of structural materials used in WWER type nuclear power plants should be focussed. (author).
Study of silicon damage caused by ultra-low energy boron implantation
International Nuclear Information System (INIS)
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as ...
Energy Technology Data Exchange (ETDEWEB)
The effect of partial and total replacement of tungsten by molybdenum on the mechanical technical properties were investigated with the cold work steel 60 WCrV 7 (DIN 1.2550). While maintaining the total quantity of tungsten atoms and/or molybdenum atoms in the steel, no differences occur in the type of the separated carbides. After annealing in the range of the pearlite stage with annealing times of up to 150 h, the carbide phases M/sub 23/C/sub 6/ and MC are, besides alpha iron, also present. In short-time annealed states also M/sub 6/C carbides occur. These are formed during austeniting and remain in the steel as residual carbides in austeniting treatment carried out under normal conditions. Compared with tungsten alloyed steel, there is an increased formation of M/sub 6/C carbides in molybdenum alloyed steels during austeniting. By a long-time annealing treatment in the range of the pearlite stage, ...
1985-12-11
Energy Technology Data Exchange (ETDEWEB)
A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening process than pure ...
2002-01-01
A study of palladium silicide formed by focused ion beam implantation of palladium ions
The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect ...
1989-01-01
A study of palladium silicide formed by focused ion beam implantation of palladium ions
International Nuclear Information System (INIS)
The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. A heat transfer model ...
Energy Technology Data Exchange (ETDEWEB)
A Vacuum Circuit Breaker demonstrated its ability to interrupt short circuits with faster than normal rates of rise of Transient Recovery Voltage (TRV) at levels greater than those produced by most transformer secondary faults. Two recent exploratory test programs evaluated the interrupting ability of a 15kV Vacuum Circuit Breaker containing interrupters of the rotating arc type with contacts made from a Chromium-Copper powder metal mixture. The interrupting conditions covered a wide range of currents from 10% to 130% of the 28kA rated short circuit current of the tested circuit breaker and a wide range of TRV rates of rise, including the relatively slow rate of rise, normally used in testing and found in most indoor circuit breaker applications; two faster rates of rise equaling and exceeding those found in a known power plant transformer secondary protection application; and the fastest rates of rise possible in the laboratory which exceed ...
1994-12-31
Summary of ACSL Simulations of the MSRE Auxiliary Charcoal Bed Vacuum System
Energy Technology Data Exchange (ETDEWEB)
The simulation of the Auxiliary Charcoal Bed (ACB) Vacuum System was performed to evaluate the original vacuum system design, detect and identify design deficiencies, investigate the effects of proposed corrections on system performance, and generally aid in refining the system design before construction and mockup testing. The simulation was performed by using the Advanced Continuous Simulation Language (ACSL). The vacuum system design goals are to provide approximately 20 SCFM of both booster gas and purge gas through the system and maintain a flow of approximately 40 SCFM with a velocity of 50 to 75 f/sec at the entrance to the cyclone separator. The model results showed that the original system design was incapable of meeting the system performance goals. Further simulations showed that the following modifications to the original vacuum system design were required to make the system performance ...
2000-10-26
Energy Technology Data Exchange (ETDEWEB)
Puffer gas circuit breaker used widely in interrupters with from middle capacity to large capacity does not keep away from reacting force of the puffer with high functions in principle and there is a limit in low operation. In this study, aiming at low operation of the interrupters, in order to clarify the basic motions of hybrid circuit interrupter that is the combination of thermal puffer gas circuit breaker and vacuum circuit breaker, the interrupting ability of simple thermal puffer gas breaker and the voltage sharing characteristics in the cases of series connection with the vacuum circuit breaker are studied. The results of the study are as follows. In comparing terminal short circuit accident interrupting ability of single flow typed thermal puffer gas breaker with that of double flow typed thermal puffer gas breaker, the interrupting ability of the double flow typed thermal puffer gas breaker may be improved. It is also clarified that ...
1993-12-20
X-ray microanalysis of Al/Zr multilayers in the transmission electron microscope
International Nuclear Information System (INIS)
A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thin amorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 C a metastable cubic alloy forms at the Zr deposited on Al interface. Upon heating ...
1997-04-04
Energy Technology Data Exchange (ETDEWEB)
SiO/sub 2//Si samples prepared in 2% and 4% HCl/O/sub 2/ mixtures at 1200/sup 0/C have been annealed in H/sub 2/O/N/sub 2/ ambients at 1200/sup 0/C. The anneals ranged up to 16 hrs in ambients with 4 or 40 ppM H/sub 2/O in N/sub 2/. Rutherford backscattering measurements have been made to determine the amount and location of Cl incorporated in these samples. A linear loss of Cl with annealing time is found for all samples. Changes in the distribution of Cl near the SiO/sub 2//Si interface are found. These changes are interpreted in terms of morphological changes in the third (Cl containing) phase. A significant effect of the H/sub 2/O content of the N/sub 2/ ambient is observed.
1980-01-01
Recovery of Tsub(c) by annealing of irradiated A-15 compounds
International Nuclear Information System (INIS)
Data on the recovery of Tsub(c) for several neutron irradiated A-15 compounds are presented. A model for the mechanism of recovery is suggested and has been applied to isothermal annealing data at 550"0C on a sample of Nb_3Ge and to isochronal annealing (200"0C-900"0C) data on V_3Si, Nb_3Ge and Nb_3Sn subjected to varying doses of fast neutrons and on Nb_3Al of various compositions subjected to the same dose. The recovery is assumed to take place by vacancy assisted reordering and occurs in several stages. The major low temperature stage is attributed to irradiation induced vacancies, while at high temperatures there are depleted and recovery is ascribed to the motion of thermal equilibrium vacancies. Activation energies deduced for these processes, approximately 1 eV for vacancy motion and approximately 1-2 eV for vacancy formation, are consistent with what is known about diffusion in the A-15 structure. (Auth.).
Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low energy (ULE) B implanted Si during annealing. Defect dissolution occurs earlier and at ...
2002-01-01
Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon
International Nuclear Information System (INIS)
We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, #left brace#1 1 3#right brace#s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of #left brace#1 1 3#right brace# defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low energy (ULE) B implanted Si during annealing. Defect dissolution occurs ...
2002-01-01
International Nuclear Information System (INIS)
A zirconium alloy comprising from 0.8 to 1.6wt% of Sn, from 0.17 to 0.25wt% of Fe, from 0.15 to 0.25wt% of Cr and from 0.01 to 0.08wt% of Ni and Si at a concentration of 120ppm or lower as an impurity and the balance of Zr is melted into cast pieces and then subjected to an #beta# annealing. It is controlled so as to satisfy Fe + Cr + Ni #<=# 0.52wt%. Then, rolling and annealing are applied so that the total heat injection amount #SIGMA#A_i to the materials is within a range of from 1 x 10"-"1"9 to 1 x 10"-"1"7. #SIGMA#A_i = #SIGMA#t_i #centre dot# exp(-Q/RT_i), in which t_i represents processing time (hour) at an ith heat treatment step after the #beta# annealing, T_i represents a processing temperature (K) in the step i. Q represents an activating energy, R represents a gas constant, and Q/R 40,000. (I.N.).
1995-08-23
Energy Technology Data Exchange (ETDEWEB)
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during high temperature ...
1995-05-01
Energy Technology Data Exchange (ETDEWEB)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two ...
1985-01-01
International Nuclear Information System (INIS)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms ...
Irradiation hardening of reduced activation martensitic steels
International Nuclear Information System (INIS)
Irradiation response on the tensile properties of 9Cr-2W steels has been investigated following FFTF/MOTA irradiations at temperatures between 646 and 873 K up to doses between 10 and 59 dpa. The largest irradiation hardening accompanied by the largest decrease in the elongation is observed for the specimens irradiated at 646 K at doses between 10 and 15 dpa. The irradiation hardening appears to saturate at a dose of around 10 dpa at the irradiation temperature. No hardening but softening was observed in the specimens irradiated at above 703 K to doses of 40 and 59 dpa. Microstructural observation by transmission electron microscope (TEM) revealed that the dislocation loops with the a left angle 100 right angle type Burgers vector and small precipitates which were identified to be M_6C type carbides existed after the irradiation at below 703 K. As for the void formation, the average size of voids increased with increasing irradiation temperature from 646 to 703 K. No voids were ...
Energy Technology Data Exchange (ETDEWEB)
Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.
2004-06-30
International Nuclear Information System (INIS)
Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.
2004-06-30
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films
International Nuclear Information System (INIS)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films
Energy Technology Data Exchange (ETDEWEB)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
1993-07-16
Hardening by point defects in neutron irradiated AlN and SiC
International Nuclear Information System (INIS)
Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops ...
Effects of post-irradiation annealing in alpha-particle bombarded molybdenum
International Nuclear Information System (INIS)
Structural variations in 39-MeV alpha-particle irradiated (Tsub(irr) = 60 deg C) polycrystalline molybdenum during post-irradiation annealing were studied by X-ray and TEM methods. Despite the high density of irradiation induced defects in the structure of the specimen X-ray measurements showed zero relative lattice parameter change after an irradiation dose of 1.1 x 10"-_2 dpa. However, during the annealing #delta#a/a was changed in the positive range, exhibiting two peaks - at 100 and 300 deg C - whereas the damage structure detected by TEM indicated no changes. Analysis of the results leads to the conclusion that in the range 100 to 250 deg C migration of isolated vacancies and their annihilation at interstitial clusters as well as possible formation of new vacancy clusters occur. The second peak on the #delta#a/a temperature dependence curve is related to the transformation (probably, thermal disintegration) of vacancy clusters formed at ...
Effects of Thermal Annealing Upon the Nanomorphology of Poly(3-hexylselenophene)-PCBM Blends
British Library Electronic Table of Contents (United Kingdom)
Abstract Grazing incidence X-ray diffraction (GI-XRD) is used to characterize the crystallographic dynamics of low molecular weight (LMW) and high molecular weight (HMW) poly(3-hexylselenophene) (P3HS) films and blend films of P3HS with [6-6-]-phenyl-C61-butyric acid methyl ester (PCBM) as a function of -step-by-step- thermal annealing, from room temperature to 250-C. The temperature-dependent GIXRD data show how the melting point of P3HS crystallites is decreased by the presence of PCBM. P3HS crystallite domain sizes dramatically increase upon annealing to the P3HS melting temperature. The formation of well-oriented HMW P3HS crystallites with the (100) plane parallel to the substrate (edge-on orientation), when cooled from melt, are observed. We compare the behaviour of P3HS pure and blen...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
2008-02-15
International Nuclear Information System (INIS)
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
2008-02-01
Energy Technology Data Exchange (ETDEWEB)
(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of ...
1997-11-01
International Nuclear Information System (INIS)
(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As ...
1996-12-02
Energy Technology Data Exchange (ETDEWEB)
The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and IrO{sub 2} are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in O{sub 2} ambient. The leakage current mechanisms of PLZT capacitors with Pt and IrO{sub 2} top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model. (author). 15 refs., 6 figs.
2001-02-01
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...
1989-03-01
Defects induced by focused ion beam implantation in GaAs
Energy Technology Data Exchange (ETDEWEB)
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .
1988-05-01
Defects induced by focused ion beam implantation in GaAs
International Nuclear Information System (INIS)
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.
Creep-fatigue and temperature synergisms in alloy 800
Energy Technology Data Exchange (ETDEWEB)
Alloy 800 from three different commercial heats have been continuously cycled and cycled with a hold period at 922/sup 0/K. The starting microstructures of these heats reflects an inherently wide spectrum of possibilities for Alloy 800. The amounts and morphologies of the TiC and M/sub 23/C/sub 6/ carbides are different among the heats. During cycling, M/sub 23/C/sub 6/ forms intragranularly in a solution annealed heat. This precipitation contributes to the cyclic hardening. Both mill annealed heats of Alloy 800 are stable to carbide precipitation during cycling. The heat with the lower carbon content formed ..gamma..' during cycling but the volume fraction was too low to contribute to hardening. The inclusion of hold periods caused the dislocation substructure to become more diffuse in the mill annealed heats. The cyclic hardening was enhanced with the inclusion of the hold periods but this was not due to any ...
1984-01-01
Aluminum nitride precipitation and texture development in batch-annealed bake-hardening steel
Energy Technology Data Exchange (ETDEWEB)
A model is presented that describes the development of texture during the production process of bake-hardening steel recrystallized in a batch-annealing furnace. Proper conditions are analyzed to generate a pronounced {gamma}-fiber texture and a pancake microstructure that shows superior deep drawability. The {gamma}-fiber texture is assumed to be caused by the interaction between tertiary precipitating aluminum nitride particles and the recrystallization process during heating in the furnace. Deep drawability is presented in terms of the logarithmic {gamma}- and {alpha}-fiber X-ray intensity ratio. The computer simulation of the coupled aluminum nitride precipitation and recrystallization kinetics is based on an iterative procedure. A comparison between simulation results and available experimental data proves the ability of the model to predict the final deep drawability, taking into account the initial aluminum and nitrogen contents, the time/temperature history ...
1999-06-01
A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations
International Nuclear Information System (INIS)
Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the '+n', in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity concentration comparable to the net I-V excess, ...
2004-12-15
Natural circulation reactor design safety analysis
This thesis study covers both global performance and local phenomena analyses focusing on natural circulation reactor design safety. Four important topics are included: the global SBWR design safety assessment, important local phenomena investigation, steady and transient natural circulation process study, and two-phase instability analysis. The conceptual design of the SBWR-200 is introduced in this thesis and the global performance of a natural circulation reactor is then assessed using PUMA integral test data and RELAP5 simulations. A safety assessment methodology is developed to evaluate the PUMA integral test data extrapolation and code scalability. The RELAP5 code simulation capability in low-pressure low-flow conditions is also validated. The study shows that the code is capable of predicting the global accident scenario in natural circulation reactors with reasonable accuracy, while failing to reproduce some safety related local ...
2001-01-01
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
International Nuclear Information System (INIS)
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.
1984-11-26
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
Energy Technology Data Exchange (ETDEWEB)
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.
1986-01-01
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
Energy Technology Data Exchange (ETDEWEB)
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.
1984-01-01
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
International Nuclear Information System (INIS)
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Energy Technology Data Exchange (ETDEWEB)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
1998-05-01
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
International Nuclear Information System (INIS)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
1998-05-01
Energy Technology Data Exchange (ETDEWEB)
The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
1995-10-09
International Nuclear Information System (INIS)
The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.
Substitution of neodymium in the Formula Not Shown superconductor
British Library Electronic Table of Contents (United Kingdom)
The Fe-based copper oxide Formula Not Shown exhibits superconductivity around 50K only when it is properly annealed in Formula Not Shown atmosphere and subsequently in Formula Not Shown atmosphere. In contract Formula Not Shown does not exhibit superconductivity even if it is annealed along the same process as Formula Not Shown . We have synthesized the polycrystalline samples of Formula Not Shown solid solution system Formula Not Shown to investigate the Nd substitution effects. DC magnetization measurements have shown that, the samples in a range of Formula Not Shown exhibit superconductivity and Formula Not Shown was reduced with increasing the Nd content. However, we could not observe the superconductivity for Formula Not Shown and 1. Rietveld refinement results revealed that due to th...
2008-01-01
Study of surface segregation of Si on palladium silicide using Auger electron spectroscopy
International Nuclear Information System (INIS)
The transformation of Pd/Si to Pd_2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd_2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd_2Si is formed in the form of islands, which grow as the annealing temperature is increased.
2004-11-21
International Nuclear Information System (INIS)
Weld metal, base material and stainless steel overlay specimens for Charpy tests and static tensile tests were irradiated for a year in a power reactor of the Bohunice nuclear power plant in place of the evaluated surveillance specimens. The material of the specimens was identical with that of the WWER-440 reactor pressure vessels, and was exposed to a fluence of (1.2 - 4.5) x 10"2"3 m"-"2 (E > 0.5 MeV) at approximately 270 degC. Some of the irradiated as well as unirradiated specimens were subjected to regeneration annealing at 475 degC for 168 h. The behavior of the materials after irradiation and annealing was evaluated. (author). 33 tabs., 32 figs., 8 refs.
Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices
International Nuclear Information System (INIS)
Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.
Infrared bleaching of the thermoluminescence of four feldspars
International Nuclear Information System (INIS)
This paper studies the effect upon the thermoluminescence (TL) signal of four feldspar samples of exposing them to infrared stimulation, as occurs during infrared-stimulated luminescence (IRSL) measurement. Together with pulse annealing measurements these results are used to show which part of the TL signal is removed by exposure to IR and which part is directly related to the IRSL signal that is observed. When the samples are preheated prior to measurement in order to remove any low-temperature (< 200"oC) TL signals, a linear relationship is observed between the amount of TL that is lost and the IRSL light sum that is produced. The IRSL light sum is consistently four times larger than the amount of TL that is lost. Three possible explanations are proposed for this, but no conclusive evidence could be obtained to support any of them. A close similarity is observed in the pulse annealing results and the loss of TL due to IR exposure of the ...
1995-06-01
Influence of shape on ordering of granular systems in two dimensions
Energy Technology Data Exchange (ETDEWEB)
We investigate ordering properties of two-dimensional granular materials using several shapes created by welding ball bearings together. Ordered domains form much more easily in two than in three dimensions, even when configurations lack long-range order. The onset of ordered domains occurs near a packing density of 0.8, a phenomenon observed previously for disks. One of our shapes, the trapezoid, has packings that remain disordered and near the transition density even after annealing by shaking. Although random packings are unstable for disks and many other shapes in two dimensions, trapezoid packings provide an approach to studying two-dimensional randomness. We also find that the rotational symmetry of a shape is an excellent predictor of how easily it orders, and a potential guide to identifying two-dimensional shapes that remain random after annealing.
2001-06-01
International Nuclear Information System (INIS)
It has recently been shown that the superconducting properties of Nb-base A-15 compounds, A_3B, are severely degraded when exposed to high-energy (E>1 MeV) neutron irradiation at ambient reactor temperatures. In each case, superconducting transition temperatures, Tsub(c), and the Bragg Williams order parameters, S, were observed to decrease steadily with irradiations in excess of 10"1"8 nvt. During irradiation the A-15 structure is retained and subsequent isothermal annealing restores almost completely the compound's original Tsub(c) value. In this letter a correlation between B atom diameter and the recovery rates of Tsub(c) for the irradiated materials Nb_3Ge, Nb_3Ga, Nb_3Al and Nb_3Sn is reported. (Auth.).
Hydrogen effect on the deformation and annealing textures in the #beta# titanium alloy VT35
International Nuclear Information System (INIS)
A study is made into textures of deformation and primary recrystallization forming in a #beta#-titanium alloy doped with hydrogen in amounts from 0.04 to 0.55 mass. %, on cold rolling with a 70%-reduction and dehydrogenating annealing at 860 deg C. It is shown that a volume fraction of recrystallization texture components is determined by the nature of corresponding deformation texture, in its turn, depending on hydrogen concentration in the alloy. At low hydrogen contents the main texture components are #left brace#111#right brace# and #left brace#001#right brace#. A hydrogen content increase up to 0.09 - 0.18 mass. % results in formation of dominant components of #left brace#111#right brace# and #left brace#112#right brace#
2003-12-01
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films
Energy Technology Data Exchange (ETDEWEB)
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
1982-06-11
Growth meachnisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films
Energy Technology Data Exchange (ETDEWEB)
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
1982-06-11
British Library Electronic Table of Contents (United Kingdom)
An ultrafine-grained ferrite/cementite (UGF/C) steel with a local high density of cementite particles was fabricated through caliber-warm-rolling followed by annealing and resulted in a bimodal-sized microstructure. The characteristic bimodal-sized microstructure was attributed to the original ferrite-pearlite structure and cementite spacing, and reflected the original ferrite-pearlite structure. The smaller-sized clusters corresponded to the former pearlite regions and the larger-sized clusters to the proeutectoid ferrite regions. The cementite particles naturally localized within the former pearlite region. Most of the ferrite coarsening did not occur until the cementite particle spacing reached a critical value. The UGF/C microstructure with a bimodal grain size showed a yield strength ...
2008-01-01
Focused ion beam implantation induced site-selective growth of InAs quantum dots
International Nuclear Information System (INIS)
The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.
2007-09-17
Electrical properties of focused-ion-beam boron-implanted silicon
International Nuclear Information System (INIS)
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon
International Nuclear Information System (INIS)
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
1989-04-25
Energy Technology Data Exchange (ETDEWEB)
Investigations of dislocation structure and mechanical properties of iron after rolling deformation in shaped rolls and after hydroextrusion are conducted. It is shown that dislocation iron structure slightly changes with deformation degree after rolling in shaped rolls and annealing and it is characterized by low density of screw dislocations. Cold brittleness temperature decreases in the result of rolling and the succeeding recrystallization and impact strength increases both at room temperature and at low temperatures. Screw dislocations having high Peierls barrier prevail in the structure after hydroextrusions. The iron deformed by hydroextrusion at 400 mPa and higher after annealing has high cold brittleness temperature and low impact strength.
1982-03-01
Analysis of the creep strain-time behavior of alloy 800
Energy Technology Data Exchange (ETDEWEB)
The high-nickel austenitic alloy 800 (in both the mill-annealed and the solution-treated grades) has several attractive properties that make it a good candidate for service attractive properties that make it a good candidate for service at elevated temperatures in corrosive environments. One such property is creep resistance. This report analyzes the elevated-temperature creep behavior of the mill-annealed grade, generally referred to simply as alloy 800. (The solution-treated grade is known as alloy 800H). Available data over the temperature range from 538 to 760/sup 0/C were collected and evaluated to yield mathematically approximations for creep-rupture and strain-time behavior for use in design calculations. However, the creep behavior of this material is extremely complex, and the analysis presented here contains substantial uncertainties. All results in this report should be considered preliminary because of limited data currently ...
1983-05-01
Energy Technology Data Exchange (ETDEWEB)
Kawasaki Steel has constructed many facilities for 15 years to produce cold rolled products and galvanized products in Mizushima Works and Chiba Works. To efficiently and stably produce high and uniform quality products, various new control methods have been developed and applied to these new facilities. Especially, temperature control in a continuous annealing line, zinc coating control in a continuous galvanizing line or paint coating control in a multi-purpose coating line and tension control to achieve stable processing are the most advanced technologies and are introduced in this paper. (author)
1999-12-01
Turning the Moon into a Solar Photovoltaic Paradise
Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
We revisited the quantum Zeno paradox, which claims that a generic quantum system prepared in a state which is not an eigenstate of the Hamiltonian operator and is continuously observed never decays. Since any perfectly isolated quantum system always interact with a vacuum field, we analyze the possibility of using this fact to solve the above mentioned conceptual problem. Therefore we discuss a two-level system or qubit-Bose field interaction Hamiltonians. We consider the quantum dynamics of this two-level system, prepared in the excited state interacting with a Bose field prepared in the Poincare invariant vacuum state. Using a first-order approximation in time-dependent perturbation theory, we evaluate the probability of spontaneous decay of the two-level system driven by the vacuum field. This probability is evaluated for a finite time interval. Using the standard argument to obtain the quantum Zeno paradox, we consider ...
2006-12-15
Potassium deposition on a thiophene-terminated alkanethiol monolayer
International Nuclear Information System (INIS)
Potassium deposition in ultrahigh vacuum on 12-(3-thienyl)dodecanethiol monolayers assembled on gold surfaces has been investigated using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Angle-resolved XPS indicates that initially deposited potassium penetrates the self-assembled monolayer (SAM) and diffuses to the SAM/Au interface. Even after large metal doses, the presence of thiophene ring valence electronic states in the UPS spectra confirms that most of the thiophene rings (at the SAM/vacuum interface) are not covered by potassium. The binding energy shifts of the thiophene ring valence states and the C1s and thiophene S2p peaks, referenced to the Fermi level, are due to the work function changes of the gold substrate. This indicates that these electronic states are pinned to the vacuum level, in contrast to the thiolate S2p orbital, which is pinned to the Fermi level. For large potassium doses, the ...
2009-05-01
Energy Technology Data Exchange (ETDEWEB)
Aiming to realize ball bearings operable in a vacuum and under high temperature, silicon nitride (Si3N4) ceramic ball bearings were tested. The tested ball bearings were angular contact ball bearings composed of silicon nitride with sputtered molybdenum disulfide coating using a retainer of hot-pressed self-lubricating composite material. The time variation of the frictional torque was examined for the operations under the conditions at 500{degree}C in a vacuum at a rotational speed of 600 rpm and 50N thrust load for 5{times}10{sup 7}revolutions (1400 hours) and for 1.5{times}10{sup 8}revolutions (4200 hours). Excellent tribological performance was obtained. The ball bearings are lubricated with the molybdenum disulfide film at the initial stage of the operation and with a transfer film formed from the retainer material to the balls. In a test at 650{degree}C, low and stable frictional torque was observed up to 500 hours of operation as of the ...
1996-04-05
On the plasma rotation in a straight magnetized filter of a pulsed vacuum arc
International Nuclear Information System (INIS)
In vacuum arcs of interest for ion deposition, in which a magnetic filter is used, significant plasma rotation about the filter axis can develop. In the present work we present experimental evidence and simplified models to interpret relatively fast rotation of plasma generated in a pulsed vacuum arc with a straight magnetic filter and with a magnetic field strength in the range 52-430 G. The plasma rotation is produced in the first part of the filter (the driving region) where either the expanding or the contracting plasma encounters a mainly axial magnetic field. In the next part of the filter (the rotation region) a quasi-equilibrium is achieved and the plasma does not evolve further significantly. A rigid-rotor type of equilibrium is considered to model the rotation region, with experimentally obtained parameters, and a simple model is employed in the driving region to quantify the magnitude of the plasma rotation. It is found that at the ...
2007-01-21
Lattice calculation of nonleptonic charm decays
Energy Technology Data Exchange (ETDEWEB)
The decays of charmed mesons into two body nonleptonic final states are investigated. Weak interaction amplitudes of interest in these decays are extracted from lattice four-point correlation functions using a effective weak Hamiltonian including effects to order G{sub f} in the weak interactions yet containing effects to all orders in the strong interactions. The lattice calculation allows a quantitative examination of non-spectator processes in charm decays helping to elucidate the role of effects such as color coherence, final state interactions and the importance of the so called weak annihilation process. For D {yields} K{pi}, we find that the non-spectator weak annihilation diagram is not small, and we interpret this as evidence for large final state interactions. Moreover, there is indications of a resonance in the isospin {1/2} channel to which the weak annihilation process contributes exclusively. Findings from the lattice calculation are compared to results from the continuum ...
1991-11-01
High frequency limit of vacuum microelectronic grating free-electron laser
International Nuclear Information System (INIS)
The dependencies that limit high frequency operation of a vacuum microelectronic grating free-electron laser are examined. The important parameters are identified as the electron beam energy, emittance, and generalized perveance. The scaling of power with emittance and frequency is studied in the far-infrared spectral range using a modified scanning electron microscope (SEM) and submillimeter diffraction gratings. The SEM is suited to the task of generating and positioning a low emittance (10"-"2#pi#-mm-mrad), low current (100 #mu#A), but high current density (50-500 A cm"-"2) electron beam. It has been used to demonstrate the spontaneous emission process known as the Smith-Purcell effect. A vacuum microelectronic grating free-electron laser has the potential of generating radiation throughout the entire far-infrared spectral range which extends from approximately 10 to 10"3#mu#m. An introduction to the theory, initial results, and details of ...
1995-08-21
Energy Technology Data Exchange (ETDEWEB)
Time contour expression of limited range phenomena on stack chart is examined for further improvement on the result of the ultimate interpretation in the seismic reflection survey. The policy is made clear from the beginning that local phenomena are to be discussed, and data prior CMP stacking is interpreted in detail. For this purpose, it is effective to make use of the time contour expression in the midpoint-offset plane simultaneously with the CMP and COP panels. For the review of data prior to CMP stacking, it is convenient to use the CMP (CDP) stacking chart in which the data is arranged methodically. In this chart, all the channels which are crude data prior to stacking are plotted on midpoint-offset coordinates, which plane is called the MOD (Midpoint Offset Domain) panel. Various panels can be chosen unrestrictedly, and their mutual relations can be easily grasped. When data points are given a time axis, they can be expressed in a time ...
1997-05-27
Energy Technology Data Exchange (ETDEWEB)
The performance of a geologic repository for high-level nuclear waste will be influenced to a large degree by thermohydrologic phenomena created by the emplacement of heat-generating radioactive waste. The importance of these phenomena is manifest in that they can greatly affect the movement of moisture and the resulting transport of radionuclides from the repository. Thus, these phenomena must be well understood prior to a definitive assessment of a potential repository site. An investigation has been undertaken along three separate avenues of analysis: (i) laboratory experiments, (ii) mathematical models, and (iii) similitude analysis. A summary of accomplishments to date is as follows. (1) A review of the literature on the theory of heat and mass transfer in partially saturated porous medium. (2) A development of the governing conservation and constitutive equations. (3) A development of a dimensionless form of the ...
1993-07-01
New correlated electron physics from new materials
International Nuclear Information System (INIS)
Many important advances in the physics of strongly correlated electron systems have been driven by the development of new materials: for instance the filled skutterudites MT4X12 (M=alkali metal, alkaline earth, lanthanide, or actinide; T=Fe, Ru, or Os; X=P, As, or Sb), certain lanthanide and actinide intermetallic compounds such as URu2-xRexSi2 and CeTIn5 (T=Co, Rh, or Ir), and layered oxypnictides and related materials. These types of complex multinary d- and f-electron compounds have proven to be a vast reservoir of novel strongly correlated electron ground states and phenomena. In these materials, the occurrence of such a wide range of ground states and phenomena arises from a delicate interplay between competing interactions that can be tuned by partial or complete substitution of one element for another, as well as the application of pressure, and magnetic fields, resulting in rich and complex electronic phase diagrams in the hyperspace of ...
2009-10-15
Vessel elements present in the secondary xylem of Trochodendron and Tetracentron (Trochodendraceae)
British Library Electronic Table of Contents (United Kingdom)
For almost 150 years, the two monotypic genera Trochodendron and Tetracentron (Trochodendraceae) have been considered to share an unusual and primitive feature in angiosperms - the lack of vessels in their wood. Therefore, they have been classified in a basal position in the angiosperms. Our observations by light microscopy, low-vacuum environmental scanning electron microscopy (ESEM) and high-vacuum scanning electron microscopy (SEM) both in fresh and FAA-fixed materials consistently showed the presence of tracheary elements differentiated into two types in both genera. In Trochodendron, the tracheary elements can be divided into perforate vessel elements and imperforate fiber-tracheids and tracheids. The vessel elements show end and lateral walls. The pits on the end walls are elongate- ...
2011-01-01
Vacuum leak problem in low energy of pelletron
International Nuclear Information System (INIS)
During unit wise conditioning of unit 8, the vacuum started deteriorating inside the tube after a spark. The RGA reading was taken and it was found out that residual gas inside tube was sulphur hexafluoride. A leak was detected in second tube of unit number eight in between electrode 6 to 8. Leak was sealed with the sealant. Again leak check was done and no leak was found. The tank was closed and conditioning was started again. During the same unit number eight conditioning, leak developed again followed by a spark. So the damaged tube was replaced with a new accelerator tube. During the installation time the alignment of the machine was taken care. Again leak checking was done and the tube was baked properly. The tank was closed again and this particular unit was conditioned for about four days. The maximum voltage it has attained was 1.1 MV. (author)
We formulate a complete theory of Edge Radiation based on a novel method relying on Fourier Optics techniques. Similar types of radiation like Transition Undulator Radiation are addressed in the framework of the same formalism. Special attention is payed in discussing the validity of approximations upon which the theory is built. Our study makes consistent use of both similarity techniques and comparisons with numerical results from simulation. We discuss both near and far zone. Physical understanding of many asymptotes is discussed. Based on the solution of the field equation with a tensor Green's function technique, we also discuss an analytical model to describe the presence of a vacuum chamber. In particular, explicit calculations for a circular vacuum chamber are reported. Finally, we consider the use of Edge Radiation as a tool for electron beam diagnostics. We discuss Coherent Edge Radiation, Extraction of Edge Radiation by a mirror, and ...
2008-01-01
Survival of gas phase amino acids and nucleobases in space radiation conditions
We present experimental studies on the photoionization and photodissociation processes (photodestruction) of gaseous amino acids and nucleobases in interstellar and interplanetary radiation conditions analogs. The measurements have been undertaken at the Brazilian Synchrotron Light Laboratory (LNLS), employing vacuum ultraviolet (VUV) and soft X-ray photons. The experimental set up basically consists of a time-of-flight mass spectrometer kept under high vacuum conditions. Mass spectra were obtained using photoelectron photoion coincidence technique. We have shown that the amino acids are effectively more destroyed (up to 70-80%) by the stellar radiation than the nucleobases, mainly in the VUV. Since polycyclic aromatic hydrocarbons have the same survival capability and seem to be ubiquitous in the ISM, it is not unreasonable to predict that nucleobases could survive in the interstellar medium and/or in comets, even as a stable cation.
2008-01-01
Spontaneous excitation of an accelerated atom in a spacetime with a reflecting plane boundary
We study a two-level atom in interaction with a real massless scalar quantum field in a spacetime with a reflecting boundary. The presence of the boundary modifies the quantum fluctuations of the scalar field, which in turn modifies the radiative properties of atoms. We calculate the rate of change of the mean atomic energy of the atom for both inertial motion and uniform acceleration. It is found that the modifications induced by the presence of a boundary make the spontaneous radiation rate of an excited inertial atom oscillate near the boundary and this oscillatory behavior may offer a possible opportunity for experimental tests for geometrical (boundary) effects in flat spacetime. While for accelerated atoms, the transitions from ground states to excited states are found to be possible even in a vacuum due to changes in the vacuum fluctuations induced by both the presence of the boundary and the acceleration of atoms, and this can be ...
2005-09-15
British Library Electronic Table of Contents (United Kingdom)
The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...
2011-01-01
Special features of control and protection for large saturated steam turbines
International Nuclear Information System (INIS)
For shut-down safety of the turbine generator (securing of auxiliary power operation after load shut-down and preventing the reaching of overspeed after load shut-down with disturbed turbine governing system) additional measures compared to those for superheated steam turbines are required for turbine generators in plants with pressurized water reactor (PWR) as well as those with boiling water reactor (BWR) . Equipment is described (e.g. overspeed govern or selecting connection, vacuum breaker, bypass valves, intercepting valves) which, depending on the own conditions of the individual turbine generator (e.g. run-up time, vacuum, enclosed energy), may be applied alone or in jointly. (orig.).
Size determination of Acipenser ruthenus spermatozoa in different types of electron microscopy
British Library Electronic Table of Contents (United Kingdom)
In this study three types of scanning electron microscopes were used for the size determination of spermatozoa of sterlet Acipenser ruthenus - high vacuum scanning electron microscope (SEM, JEOL 6300), environmental scanning electron microscope (ESEM, Quanta 200 FEG), field emission scanning electron microscope (FESEM, JEOL 7401F) with cryoattachment Alto 2500 (Gatan) and transmission electron microscope (TEM, JEOL 1010). The use of particular microscopes was tied with different specimen preparation techniques. The aim of this study was to evaluate to what degree the type of used electron microscope can influence the size of different parts of spermatozoa. For high vacuum SEM the specimen was prepared using two slightly different procedures. After chemical fixation with 2.5% glutaraldehyde...
2010-01-01
Secondary electron yield measurements from thin surface coatings for NLC electron cloud reduction
In the beam pipe of the positron damping ring of the Next Linear Collider, electrons will be created by beam interaction with the surrounding vacuum chamber wall and give rise to an electron cloud. Several solutions are possible for avoiding the electron cloud, without changing the bunch structure or the diameter of the vacuum chamber. Some of the currently available solutions for preventing this spurious electron load include reducing residual gas ionization by the beam, minimizing beam photon-induced electron production, and lowering the secondary electron yield (SEY) of the chamber wall. We will report on recent SEY measurements performed at SLAC on TiN coatings and TiZrV non-evaporable getter thin films.
2004-01-01
Recent advance of focused ion beam technology in maskless deposition and patterning
International Nuclear Information System (INIS)
The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).
Particulate composites in the TiC-TiYTZP system
International Nuclear Information System (INIS)
Twelve powders of TiO_2-Y_2O_3-ZrO_2 solid solution of the methodically changed composition were prepared by a coprecipitation-calcination technique. After mixing with phenol-formaldehyde resin, the powders were calcinated for 2 hours at 1200"oC in vacuum. The resultant composite powders contained TiC and non-reacted carbon. Green compacts were sintered in vacuum at 1500"oC for 2 hours. A temperature increase was stopped at 1200"oC to react remains of carbon. There were two carbides in the composites TiC and ZrC. TiC non-stoichiometry depended on carbon content in the system. Phase composition of the depended on of titania and yttria in zirconia solid solution. The majority of the samples showed two tetragonal zirconia phases differing in lattice parameter and tetragonality. (author)
2004-09-12
Overview of Cooling Water System for the KSTAR 1st Plasma Experiment
International Nuclear Information System (INIS)
The KSTAR cooling water system (CWS) consists of a primary cooling water system (PCWS), a secondary cooling water system (SCWS), and a de-mineralizing and de-ionized water system (DIWS). The PCWS cooling loops have been made for the poloidal field (PF) and toroidal field (TF) magnet power supplies (MPS), vacuum vessel (VV), electron cyclotron heating (ECH), ion cyclotron heating (ICRH), vacuum pumps, diagnostics, helium facility, etc. The CWS had been done individual commissioning of each system to confirm the design specifications by the end of 2006 and had gradually begun operation for the KSTAR ancillary devices by March 2008
2009-05-01
This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
2007-08-01
International Nuclear Information System (INIS)
This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
2007-08-01
Inflation and reheating in Bianchi type-IX cosmology
Energy Technology Data Exchange (ETDEWEB)
Within the framework of the Bianchi type-IX homogeneous space, we set up a system of coupled equations for the cosmic scale factors, scalar field, and radiative energy density. At the tree level, the equations are written in a self-consistent, Hartree-Fock form. For phi/sup 4/ theory, the system of nine first-order differential equations is solved numerically for a varying ratio of the energy of anisotropy to the vacuum energy. As the vacuum energy increases, there appears to be less reheating, since the energy of anisotropy is more efficiently converted into isotropic expansion. If the energy of anisotropy is large enough, the inflationary phase is prevented. In this case, a series of cosmological phase transitions will take place each time the square of the effective mass changes its sign.
1985-02-15
Inflation and reheating in Bianchi type-IX cosmology
International Nuclear Information System (INIS)
Within the framework of the Bianchi type-IX homogeneous space, we set up a system of coupled equations for the cosmic scale factors, scalar field, and radiative energy density. At the tree level, the equations are written in a self-consistent, Hartree-Fock form. For phi"4 theory, the system of nine first-order differential equations is solved numerically for a varying ratio of the energy of anisotropy to the vacuum energy. As the vacuum energy increases, there appears to be less reheating, since the energy of anisotropy is more efficiently converted into isotropic expansion. If the energy of anisotropy is large enough, the inflationary phase is prevented. In this case, a series of cosmological phase transitions will take place each time the square of the effective mass changes its sign.
International Nuclear Information System (INIS)
Pd was deposited onto Si (111) 7x7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the <110> direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.
2003-01-22
Full-scale model of cooling and heating system for JT-60 vacuum vessel
A full-scale model of a rigid sectorial ring and a set of bellows which was covered with a temperature control layer and a coolant supply equipment was constructed to verify the adequacy of the heating and cooling system designed for JT-60. To cool and heat it effectively and to decrease the temperature differences among the various parts in the vacuum vessel, heater units and cooling pipes were located on the surface of the ring. The temperature control layer is to heat the vessel to 500/degree/sub //C within 70 hours and to maintain it at the temperature for 48 hours for simulating the state of bakeout. Subsequently the vessel is cooled down within about the same time as in heating. Prior to the series of tests, numerical analyses were performed to predict the cooling and heating efficiencies on the model and to examine the method of the temperature regulation.
1981-01-01
Field theory description of neutrino oscillations
We review various field theory approaches to the description of neutrino oscillations in vacuum and external fields. First we discuss a relativistic quantum mechanics based approach which involves the temporal evolution of massive neutrinos. To describe the dynamics of the neutrinos system we use exact solutions of wave equations in presence of an external field. It allows one to exactly take into account both the characteristics of neutrinos and the properties of an external field. In particular, we examine flavor oscillations an vacuum and in background matter as well as spin flavor oscillations in matter under the influence of an external electromagnetic field. Moreover we consider the situation of hypothetical nonstandard neutrino interactions with background fermions. In the case of ultrarelativistic particles we reproduce an effective Hamiltonian which is used in the standard quantum mechanical approach for the description of neutrino ...
2010-01-01
Effects of quantum vacuum fluctuations of the electric field on DNA condensation
British Library Electronic Table of Contents (United Kingdom)
By assuming that not only counter-ions but DNA molecules as well are thermally distributed according to a Boltzmann law, we propose a modified Poisson-Boltzmann equation, at the classical level, as a starting point to compute the effects of quantum fluctuations of the electric field on the interaction among DNA-cation complexes. The latter are modeled here as infinite one-dimensional wires (?-functions). Our goal is to single out such quantum-vacuum-driven interaction from the counterion-induced and water-related interactions. We obtain a universal, frustration-free Casimir-like (codimension 2) interaction that extensive numerical analysis show to be a good candidate to explain the formation and stability of DNA aggregates. Such Casimir energy is computed for a variety of configurations of...
2011-01-01
Using the infrared spectroscopy method, we have studied the effect of thermal dehydration (under vacuum and in air) and treatment with water vapor on the acid centers of very high silicon zeolites of the ZSM type. We have shown that dehydration under vacuum and in air completely and irreversibly removes the OH groups at 1120/sup 0/K, while treatment with water vapor removes these groups at 770/sup 0/K. The Lewis acid centers of dehydrated zeolites (represented by two types of centers) are more heat-stable than the Bronsted acid centers, but the vapor treatment at 1020/sup 0/K leads to the disappearance of the Lewis acid centers. In this work, we discuss the reasons for destruction of the acid centers of the zeolites under different treatment conditions.
1986-08-01
Disorder on the string theory landscape may significantly affect dynamics of eternal inflation leading to the possibility for some vacua on the landscape to become dynamically preferable over others. We systematically study effects of a generic disorder on the landscape starting by identifying a sector with built-in disorder -- a set of de Sitter vacua corresponding to compactifications of the Type IIB string theory on Calabi-Yau manifolds with a number of warped Klebanov-Strassler throats attached randomly to the bulk part of the Calabi-Yau. Further, we derive continuum limit of the vacuum dynamics equations on the landscape. Using methods of dynamical renormalization group we determine the late time behavior of the probability distribution for an observer to measure a given value of the cosmological constant. We find the diffusion of the probability distribution to significantly slow down in sectors of the landscape where the number of nearest neighboring vacua ...
2008-01-01
Energy Technology Data Exchange (ETDEWEB)
This paper describes the experimental results of long-life solid lubricated ball bearings tested under high-vacuum of 10 exp -4 Pa, high-temperature of 300 C, and high-speed (9000 rpm) conditions. For full ball-type bearings, the thin soft metals, either Ag or Pb, which were coated on the races and balls, appeared to have good torque properties. However, the durability of such bearings was less than 300 hours. The transfer films from the lamellar solid MoS2 and metal composite retainers improved the torque and wear properties. For ceramic, i.e., silicon nitride, balls used with steel rings, wear occurred on the inner rings. All ceramic bearings with composite retainers showed improved torque and wear properties. 18 refs.
1993-04-01
Characterization of vacuum-multifoil insulation for long-life thermal batteries
Energy Technology Data Exchange (ETDEWEB)
The use of vacuum multifoil (VMF) container for thermal insulation in long-life thermal batteries was investigated in a proof-of-concept demonstration. An InvenTek-designed VMF container 4.9 inches in diameter by 10 inches long was used with an internally heated aluminum block, to simulate a thermal-battery stack. The block was heated to 525 C or 600 C and allowed to cool while monitoring the temperature of the block and the external case at three locations with time. The data indicate that it should be possible to build an equivalent-sized thermal battery that should last up to six hours, which would meet the requirements for a long-life sonobuoy application.
2000-04-17
Biaxial Bianchi type 9 quantum cosmology
Energy Technology Data Exchange (ETDEWEB)
We investigate the quantum cosmology of spatially homogeneous models with compact spatial sections admitting a u(2) isometry algebra. The metric ansatz in these models is that of Bianchi type IX with two scale factors set to be equal. We apply the Hartle-Hawking no-boundary path integral prescription and find the semi-classical contributions to the wave function. Exact formulae are obtainable for certain contributions and otherwise the limits of large and small anisotropy (for the pure vacuum case) and large spatial volume or small anisotropy (for the case with a positive cosmological constant) are considered. For the pure vacuum case we find no semiclassical components which would correspond to Lorentzian universes. For the case with a cosmological constant the Hartle-Hawking boundary conditions formally constrain one of the parameters in the Lorentzian solutions to be purely imaginary. Possible interpretations of this imaginary parameter are ...
1990-04-01
Biaxial Bianchi type 9 quantum cosmology
International Nuclear Information System (INIS)
We investigate the quantum cosmology of spatially homogeneous models with compact spatial sections admitting a u(2) isometry algebra. The metric ansatz in these models is that of Bianchi type IX with two scale factors set to be equal. We apply the Hartle-Hawking no-boundary path integral prescription and find the semi-classical contributions to the wave function. Exact formulae are obtainable for certain contributions and otherwise the limits of large and small anisotropy (for the pure vacuum case) and large spatial volume or small anisotropy (for the case with a positive cosmological constant) are considered. For the pure vacuum case we find no semiclassical components which would correspond to Lorentzian universes. For the case with a cosmological constant the Hartle-Hawking boundary conditions formally constrain one of the parameters in the Lorentzian solutions to be purely imaginary. Possible interpretations of this imaginary parameter are ...
Energy Technology Data Exchange (ETDEWEB)
The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.
1990-04-15
An PB?-73C vacuum spark gap with a control circuit based on an inductive energy storage
British Library Electronic Table of Contents (United Kingdom)
The design and operating principle of a small (50 mm in diameter and 100 mm in height) ???-73C vacuum spark gap are described. It is shown that it can be efficiently switched using a control circuit with a low (?900 V) supply voltage, which is based on an inductive energy storage and a diode opening switch that forms a high-voltage igniting pulse with a rise time of nanosecond duration. The ???-73C switching process is investigated at different rise times of igniting voltage pulses and different igniting current amplitudes. The results of tests of the spark gap operating in regimes of switching current pulses with an amplitude of 12 kA and a rise time of 800 ns are presented.
2011-01-01
The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.
1990-04-15
A pump-probe XFEL particle injector for hydrated samples
We have developed a liquid jet injector system that can be used for hydrated sample delivery at X-ray Free Electron Laser (XFEL) sources and 3rd generation synchrotron sources. The injector is based on the Gas Dynamic Virtual Nozzle (GDVN), which generates a liquid jet with diameter ranging from 300 nm to 20 {\\mu}m without the clogging problems associated with conventional Rayleigh jets. An improved nozzle design is presented here. A differential pumping system protects the vacuum chamber and an in-vacuum microscope allows observation of the liquid jet for diagnostics while it is being exposed to the X-ray beam. A fiber optically coupled pump laser illuminating the jet is incorporated for pump-probe experiments. First results with this injector system have been obtained at the LCLS.
2011-01-01
Structural fuzzy reliability analysis and its applications in strength problems for ships
Energy Technology Data Exchange (ETDEWEB)
In the universe there are two different kinds of uncertain phenomena: stochastic and fuzzy or vague. Both uncertain phenomena have been found in structural problems. Therefore, rational decisions concerning the design of marine structures cannot be made without resorting to the methods which can take the uncertainties into account. The fundamental concept of structural fuzzy reliability problems and the methods to give the fuzzy solution are introduced in the paper. Based on the principle of fuzzy decision-making the method to obtain the crisp solution of structural fuzzy reliability analysis is proposed by means of the Bound Search method. Illustrative numerical examples, ship bottom plates under slamming impact pressures are solved. The influence of variation of allowable tolerances in the fuzzy reliability indexes is discussed.
1995-12-31
Sodium hideout studies in steam generator crevices
International Nuclear Information System (INIS)
The steam generator availability is one of the important problems encountered during the pressurized water nuclear plant operation. Various kinds of corrosion phenomena were observed in the past. These phenomena result from the concentration of impurities mainly in three locations in the steam generators: the tubesheet crevices, the tube support plate crevices, and the sludge pile. Corrections were made in the design and the materials used but a number of steam generators suffer or will suffer from corrosion processes inducing in many cases forcing their replacement. In order to prevent or to retard the corrosions several laboratories have performed experiments to reproduce and to study the corrosion processes. The first step of the degradation is the concentration of chemical species. A method using /sup 24/Na as a radioactive tracer was used to establish the concentration kinetics of caustic which was identified as the major cause of the ...
Energy Technology Data Exchange (ETDEWEB)
The influence of radiation on the corrosion of the fuel claddings in a Light Water Reactor (LWR) has been the subject of many investigations, and different aspects of the overall phenomena have been studied by different techniques. Analysis of the evolution of Secondary-Phase Particles (SPPs) for different periods of immersion of the cladding in the reactor enables the rate of corrosion to the structure of the material to be correlated. In the case of Zircaloy-2 in a Boiling Water Reactor (BWR), SPPs are dissolved under irradiation, and their dissolution affects the rate of oxidation and other correlated phenomena. In recent studies, the Zircaloy-2 in claddings loaded in the Leibstadt BWR are analysed after one, three and five cycles. Results are presented, and give an account of the changes which occurred in the materials under irradiation. (authors)
2000-07-01
Pharmaceutical applications of non-linear imaging
British Library Electronic Table of Contents (United Kingdom)
Non-linear optics encompasses a range of optical phenomena, including two- and three-photon fluorescence, second harmonic generation (SHG), sum frequency generation (SFG), difference frequency generation (DFG), third harmonic generation (THG), coherent anti-Stokes Raman scattering (CARS), and stimulated Raman scattering (SRS). The combined advantages of using these phenomena for imaging complex pharmaceutical systems include chemical and structural specificities, high optical spatial and temporal resolutions, no requirement for labels, and the ability to image in an aqueous environment. These features make such imaging well suited for a wide range of pharmaceutical and biopharmaceutical investigations, including material and dosage form characterisation, dosage form digestion and drug rele...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
The flow of current inside a conductor leads to its overheating. This conductor is also submitted to other climatic phenomena, such as wind, sun light and ambient temperature. The knowledge of this overheating is important to ensure a functioning temperature compatible with the materials used for the conductor manufacturing and with the dip of overhead power lines above the ground and buildings. On the other hand, according to the Laplace works, the flow of current inside parallel conductors induces electromagnetic forces inside them, proportional to the product of currents in both conductors. In the case of short-circuit between aerial power lines or between flexible cables, electrodynamical stresses (traction and flexion) are applied to insulators and holders and important swinging of the lines can be observed. These stresses can be extremely important and must be considered in the design of overhead lines. These two phenomena are analyzed in ...
1997-05-01
International Nuclear Information System (INIS)
A numerical analysis method for melting/solidification phenomena has been developed to evaluate a feasibility of several candidate techniques in the nuclear fuel cycle. Our method is based on the eXtended Finite Element Method (X-FEM) which has been used for moving boundary problems. Key technique of the X-FEM is to incorporate signed distance function into finite element interpolation to represent a discontinuous gradient of the temperature at a moving solid-liquid interface. Construction of the finite element equation, the technique of quadrature and the method to solve the equation are reported here. The numerical solutions of the one-dimensional Stefan problem, solidification in a two-dimensional square corner and melting of pure gallium are compared to the exact solutions or to the experimental data. Through these analyses, validity of the newly developed numerical analysis method has been demonstrated. (author)
2008-06-01
Nuclear Phenomenology: A Conceptual Proposal for High School Teaching
The discovery of atomic nucleus by E. Rutherford, at the beginning of the twentieth century, was the Nuclear Physics original landmark. From then, a series of experiments in which beams of particles composed of neutrons, protons and others, brought to collide with a nucleus in order to unravel its structure or produce artificial elements through nuclear transmutation, were triggered. With the development of experimental equipment, a number of other nuclear phenomena have been observed, such as beta decay, nuclear fission and fusion, M\\"oesbauer effect, etc. In view of the global political and economic landscape and the contemporary educational trends, this work suggest alternative topics in nuclear physics that can be discussed at the conceptual level in high school teaching, where the main focus lies in the historical and technological importance of such phenomena in society.
2009-01-01
New correlated electron physics from new materials
British Library Electronic Table of Contents (United Kingdom)
Many important advances in the physics of strongly correlated electron systems have been driven by the development of new materials: for instance the filled skutterudites Formula Not Shown ( Formula Not Shown metal, alkaline earth, lanthanide, or actinide; Formula Not Shown , Ru, or Os; Formula Not Shown , As, or Sb), certain lanthanide and actinide intermetallic compounds such as Formula Not Shown and Formula Not Shown ( Formula Not Shown , Rh, or Ir), and layered oxypnictides and related materials. These types of complex multinary d- and f-electron compounds have proven to be a vast reservoir of novel strongly correlated electron ground states and phenomena. In these materials, the occurrence of such a wide range of ground states and phenomena arises from a delicate interplay between com...
2009-01-01
Neutron star evolution and emission
This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The authors investigated the evolution and radiation characteristics of individual neutron stars and stellar systems. The work concentrated on phenomena where new techniques and observations are dramatically enlarging the understanding of stellar phenomena. Part of this project was a study of x-ray and gamma-ray emission from neutron stars and other compact objects. This effort included calculating the thermal x-ray emission from young neutron stars, deriving the radio and gamma-ray emission from active pulsars and modeling intense gamma-ray bursts in distant galaxies. They also measured periodic optical and infrared fluctuations from rotating neutron stars and search for high-energy TeV gamma rays from discrete celestial sources.
1997-08-01
Modelling of density limit phenomena in toroidal helical plasmas
Energy Technology Data Exchange (ETDEWEB)
The physics of density limit phenomena in toroidal helical plasmas based on an analytic point model of toroidal plasmas is discussed. The combined mechanism of the transport and radiation loss of energy is analyzed, and the achievable density is derived. A scaling law of the density limit is discussed. The dependence of the critical density on the heating power, magnetic field, plasma size and safety factor in the case of L-mode energy confinement is explained. The dynamic evolution of the plasma energy and radiation loss is discussed. Assuming a simple model of density evolution, of a sudden loss of density if the temperature becomes lower than critical value, then a limit cycle oscillation is shown to occur. A condition that divides the limit cycle oscillation and the complete radiation collapse is discussed. This model seems to explain the density limit oscillation that has been observed on the W7-AS stellarator. (author)
2000-03-01
International Nuclear Information System (INIS)
The luminescence techniques have evolved over the last 40 years to a powerful dating instrument in archaeology and geoscience. Depending on how the luminescence is stimulated, one distinguishes the phenomena of thermoluminescence (TL), optically stimulated luminescence (OSL) and infrared stimulated luminescence (IRSL). Each of these phenomena has its specific potential for dating various archaeological materals in the time range from medieval back to palaeolithic periods, or, speaking in geological terms, for dating of Holocene and late Pleistocene objects. The OSL and IRSL techniques are sometimes treated together as 'optical dating'. The luminescence techniques differ from other major dating techniques, such as 14C, essentially by their applicability to inorganic materials, their wide age-range from about 100 years to more than 100,000 years and the kind of datable events which are the last exposure to heat or to light. (author). 10 refs., 3 ...
Inherent Boron Dilution Safety Issue in the French Pressurized Water Reactor: CFD Approach
International Nuclear Information System (INIS)
Inherent boron dilution can occur in case of a Small Break LOCA when low borated water is mainly accumulated in the U-legs due to reflux boiling in the Steam Generator tubes after the loss of natural circulation. The restart of the natural circulation may lead to criticality because of the injection of these low borated slugs towards the core. To evaluate this potential risk, the boron concentration at the core inlet has to be known which makes necessary to estimate the mixing phenomena in the cold leg, in the downcomer and in the lower plenum: CFD calculations are required. First of all the validation of CFX5 CFD code on the relevant phenomena of inherent boron dilution has been established (UPTF TRAM C3 test). Then, an application to the 900 MW French Pressurized Water Reactor series has been performed. (authors)
2006-07-17
British Library Electronic Table of Contents (United Kingdom)
Fatigue crack growth tests of three ferrite-pearlite steels with different size and spacing of pearlite particles, which were uniformly distributed in the ferrite matrix, were carried out to investigate the effect of microstructure on fatigue crack growth behavior in the Paris regime. The fatigue crack growth rates for the three materials did not coincide with each other, even when the crack growth curves were arranged by the effective stress intensity factor range. From in situ observations, crack tip stress shielding phenomena, such as interlocking and branching, were found on the crack wake, which enhanced fatigue crack growth resistance. A small size and spacing of pearlite particle seemed to induce small but frequent crack deflections, which resulted in crack closure phenomena. On the...
2010-01-01
Drift- or Fluctuation-Induced Ordering and Self-Organization in Driven Many-Particle Systems
According to empirical observations, some pattern formation phenomena in driven many-particle systems are more pronounced in the presence of a certain noise level. We investigate this phenomenon of fluctuation-driven ordering with a cellular automaton model of interactive motion in space and find an optimal noise strength, while order breaks down at high(er) fluctuation levels. Additionally, we discuss the phenomenon of noise- and drift-induced self-organization in systems that would show disorder in the absence of fluctuations. In the future, related studies may have applications to the control of many-particle systems such as the efficient separation of particles. The rather general formulation of our model in the spirit of game theory may allow to shed some light on several different kinds of noise-induced ordering phenomena observed in physical, chemical, biological, and socio-economic systems (e.g., attractive and repulsive agglomeration, ...
2002-01-01
Disruptive core relocation analysis of PHEBUS/FPT0 test with SAMPSON code
International Nuclear Information System (INIS)
SAMPSON is an integration of twelve analysis modules under the final development phase (phase-2) and will be capable of simulating hypothesized severe accidents in a nuclear power plant. One of these modules, the Molten Core Relocation Analysis (MCRA) module, simulates the relocation behavior of a molten core during a severe accident. MCRA models severe accident phenomena by using mechanistic formulations for multi-phase, multi-component, and multi-velocity field. As one of the verification studies of SAMPSON in Phase-1, the in-core phenomena of PHEBUS/FPT0 was analyzed with three modules, MCRA, fuel rod heat up analysis (FRHA) module, and the analysis control module (ACM) of SAMPSON. (author)
2000-10-01
British Library Electronic Table of Contents (United Kingdom)
To form a licensing basis for a new methodology for a fuel channel safety analysis code for CANDU-6 nuclear reactor, a CATHENA model for a post-blowdown fuel channel analysis has been developed, and tested for a high temperature thermal-chemical experiment CS28-1 [Lei, Q.M., 1993. Post-test analysis of the 28-element high-temperature thermal-chemical experiment CS28-1. In: 4th International Conference on Simulation Methods in Nuclear Engineering, Montreal, PQ, 1993]. Pursuant to the objective of this investigation, the current study has focused on understanding the involved phenomena, their interrelations, and how to maintain a good accuracy of the temperature and H2 generation rate prediction without losing the important physics of the involved phenomena. The transient simulation results ...
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
Experimental investigations have been conducted to determine two-phase natural circulation interfacial parameters by real-time neutron radiography. The natural circulation loop used in the present experiments consists of a vertical two-phase section, a gas liquid separator, and a gas injection/heating section. Experiments were performed in a neutron beam for visualization using realtime neutron radiography system. The natural circulation was initiated by injection of known gas flow rate in the heated section. Two-phase flow interfacial parameters including interfacial geometry and phase velocities etc. for bubbly flow and slug flow patterns observed in the experiments will be given in detail. The results indicate that while the natural circulation is largely as expected and that steady stable flows are possible, there are some local phenomena that introduce instabilities due to the interfacial phenomena between the liquid and the gas.
2003-07-01
International Nuclear Information System (INIS)
Experimental investigations have been conducted to determine two-phase natural circulation interfacial parameters by real-time neutron radiography. The natural circulation loop used in the present experiments consists of a vertical two-phase section, a gas liquid separator, and a gas injection/heating section. Experiments were performed in a neutron beam for visualization using realtime neutron radiography system. The natural circulation was initiated by injection of known gas flow rate in the heated section. Two-phase flow interfacial parameters including interfacial geometry and phase velocities etc. for bubbly flow and slug flow patterns observed in the experiments will be given in detail. The results indicate that while the natural circulation is largely as expected and that steady stable flows are possible, there are some local phenomena that introduce instabilities due to the interfacial phenomena between the liquid and the gas.
2003-10-05
CFX code application to the French reactor for inherent boron dilution safety issue
International Nuclear Information System (INIS)
Inherent boron dilution can occur in case of a small Break LOCA when low borated water is accumulated in the U-legs due to reflux boiling in the Steam Generator tubes after the loss of natural circulation. The restart of the natural circulation may lead to criticality because of the injection of these low borated slugs towards the core. To evaluate this potential risk, the boron concentration at the core inlet has to be known which makes necessary to estimate the mixing phenomena in the cold leg, in the downcomer and in the lower plenum: CFD calculations are required. First of all the validation of CFX5 CFD code on the relevant phenomena of inherent boron dilution has been established (UPTF TRAM C3 test). Then, an application to the 900 MW French Pressurized Water Reactor series has been performed. (authors)
2006-09-05
Energy Technology Data Exchange (ETDEWEB)
Single-particle combustion of coal char is analyzed using a generalized shrinking core model. Finite volume method, which was earlier employed by the authors in solving moving boundary problems involving fluid-solid noncatalytic reactions in general, is used to solve fully transient mass and energy equations. The model takes into account convection and diffusion inside the particle as well as in the boundary layer. The computed results are compared with the experimental data of the authors for combustion of coal char in a fluidized bed combustor. The effects of parameters such as bulk temperature and initial particle radius on the combustion dynamics are examined. The phenomena of ignition and extinction are also investigated. Finally, the importance of Stefan flow, originating due to nonequimolar counterdiffusion, on combustion of coal char is analyzed.
2008-09-15
International Nuclear Information System (INIS)
Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from 100eV to 1keV and doses ...
2005-08-01
Study of transient enhanced dopant diffusion in silicon and proposed limiting methods
International Nuclear Information System (INIS)
The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed
2001-09-01
Structural relaxation and crystallization in the Fe-Cr-Si-B and Fe-Cu-Cr-Si-B amorphous alloys
International Nuclear Information System (INIS)
Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)
2001-09-23
Energy Technology Data Exchange (ETDEWEB)
Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. Diffusion ...
1999-07-01
International Nuclear Information System (INIS)
Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. Diffusion ...
1998-05-24
Processing and properties of Nb-Ti-base alloys
Energy Technology Data Exchange (ETDEWEB)
The processing characteristics, tensile properties, and oxidation response of two Nb-Ti-Al-Cr alloys were investigated. One creep test at 650 C and 172 MPa was conducted on the base alloy, which contained 40Nb-40Ti-10Al-10Cr. A second alloy was modified with 0.11 at.% C and 0.07 at.% Y. Alloys were arc melted in a chamber backfilled with argon, drop cast into a water-cooled copper mold, and cold rolled to obtain a 0.8-mm sheet. The sheet was annealed at 1,100 C for 0.5 h. Longitudinal tensile specimens and oxidation specimens were obtained for both the base alloy and the modified alloy. Tensile properties were obtained for the base alloy at room temperature, 400, 600, 700, 800, 900, and 1,000 C and for the modified alloy at room temperature, 400, 600, 700, and 800 C. Oxidation tests the base alloy and modified alloy, as measured by weight change, were carried out at 600, 700, 800, and 900 C. Both the base alloy and the modified alloy were extremely ductile and were ...
1993-08-01
Processing and properties of Nb-Ti based alloys
Energy Technology Data Exchange (ETDEWEB)
The processing characteristics, tensile properties, and oxidation response of two Nb-Ti-Al-Cr alloys were investigated. One creep tests at 650{degrees}C and 172 MPa was conducted on the base alloy which contained 40Nb-40-Ti-10Al-10Cr. A second alloy was modified with 0.11 at. % carbon and 0.07 at. % yttrium. Alloys were arc melted in a chamber backfilled with argon, drop cast into a water-cooled copper mold, and cold rolled to obtain a 0.8-mm sheet. The sheet was annealed at 1100{degrees}C for 0.5 h. Longitudinal tensile specimens and oxidation specimens were obtained for both the base alloy and the modified alloy. Tensile properties were obtained for the base alloy at room temperature, 400, 600, 700, 800, 900, and 1000{degrees}C, and for the modified alloy at room temperature, 400, 600, 700, and 800{degrees}C. Oxidation tests on the base alloy and modified alloy, as measured by weight change, were carried out at 600, 700, 800, and 900{degrees}C. Both the base ...
1992-01-01
Pitting corrosion resistance of silicon-implanted stainless steels
International Nuclear Information System (INIS)
The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).
International Nuclear Information System (INIS)
Optical absorption measurements show that substitutional H"- ions, that is, protons with two electrons on anion sites, are thermally more stable than anion vacancies when thermochemically reduced CaO crystals are annealed in a reducing atmosphere. The H"- ions are identified by the infrared vibrational modes observed at 880 and 911 cm"-"1.
1985-03-01
Energy Technology Data Exchange (ETDEWEB)
The electrochemical dissolution behaviour of armco-iron and of the steels C15, C45, C60 and 100Cr6 in concentrated sodium chloride media has been investigated. Anodic metal dissolution experiments have been carried out using the flow channel cell (parallel plate reactor), the rotating cylinder electrode (RCE) and the capillary cell. The microstructure of the steel has been varied through variation of carbon content and heat treatment (e.g. soft annealed with globular carbides or pearlitic). Current-efficiency values have been obtained by gravimetric measurements in the current-density range from i=5 to 60 A/cm{sup 2}. For the soft annealed steels, the divalent ferrite dissolution in combination with electroless cementite removal dominates. For the pearlitic steels, the occurrence of oxygen evolution electronically conductive metal carbides or trivalent ferrite dissolution, depending on the current density applied, was detected. Microstructure ...
2002-10-01
Modeling of the kinetics of dislocation loops
Energy Technology Data Exchange (ETDEWEB)
The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.
1999-01-01
Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon
International Nuclear Information System (INIS)
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior ...
2002-01-01
Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover film, amount of dose ...
2002-01-01
Boron uphill diffusion during ultrashallow junction formation
International Nuclear Information System (INIS)
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
2003-05-26
International Nuclear Information System (INIS)
A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B C1.1 base metal irradiated to a dose of 4.84x10"1"8 n/cm"2 at about 380 deg C. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature of 280-305 deg C. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy aggromeration and the annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in ...
Vacuum energy of eleven-dimensional supergravity
Energy Technology Data Exchange (ETDEWEB)
The authors calculate the effective potential for the bosonic sector of eleven-dimensional supergravity on the background (Minkowski) x (sphere). No tachyons are found, and it is shown that the antisymmetric tensor field does not threaten graviton dominance when the Freund-Rubin parameter (m) vanishes. The general case (m not = O) seems untractable in the present formalism.
1987-11-01
Ultra high vacuum test setup for electron gun
Energy Technology Data Exchange (ETDEWEB)
Ultra High Vacuum (UHV) test setup for electron gun testing has been developed. The development of next generation light sources and accelerators require development of klystron as a radio frequency power source, and in turn electron gun. This UHV electron gun test setup can be used to test the electron guns ranging from high average current, quasi-continuous wave to high peak current, single pulse etc. An electron gun has been designed, fabricated, assembled and tested for insulation up to 80 kV under the programme to develop high power klystron for future accelerators. Further testing includes the electron emission parameters characterization of the cathode, as it determines the development of a reliable and efficient electron gun with high electron emission current and high life time as well. This needs a clean ultra high vacuum to study these parameters particularly at high emission current. The cathode emission current, work function and ...
2008-05-01
Transition of rotating Bianchi type-IX cosmological model into an inflationary era
Energy Technology Data Exchange (ETDEWEB)
A Bianchi type-IX cosmological model has been found as a solution of Einstien's vacuum field equations with a cosmological constant. The solution represents a rotating generalziation fo the de Sitter universe. This universe shows a transition to exponential expansion and the vorticity begins to decay exponentially at the grand-unified-theory time. The point of time for this transition is independent of the magnitude of the vorticity. During the Guth inflationary era the vorticity decays by a factor of the order 10 US.
1986-02-15
Transition of rotating Bianchi type-IX cosmological model into an inflationary era
International Nuclear Information System (INIS)
A Bianchi type-IX cosmological model has been found as a solution of Einstien's vacuum field equations with a cosmological constant. The solution represents a rotating generalziation fo the de Sitter universe. This universe shows a transition to exponential expansion and the vorticity begins to decay exponentially at the grand-unified-theory time. The point of time for this transition is independent of the magnitude of the vorticity. During the Guth inflationary era the vorticity decays by a factor of the order 10"-"1"4"2.
The physics of tachyons. Pt. 2
International Nuclear Information System (INIS)
This paper extends the development of a new formulation of the theory of tachyons to encompass the dynamics of tachyons. Energy and momentum are discussed along with the proper mass of a tachyon. The transformation of force in extended relativity (ER) is derived. Acceleration in ER is also discussed, as well as the relationship between force and acceleration. Two simple examples relating to the motion of a charged tachyon are discussed, followed by a brief explanation of why tachyons cannot emit Cerenkov radiation in a vacuum. 13 refs., 3 figs.
Tachyons: may they have a role in elementary particle physics
International Nuclear Information System (INIS)
The possible role of space-like objects in elementary particle physics (and in quantum mechanics) is reviewed and discussed, mainly by exploiting the explicit consequences of the peculiar relativistic mechanics of Tachyons. Particular attention is paid: (i) to tachyons as the possible carriers of interactions; (ii) to the possibility of ''vacuum decays'' at the classical level; (iii) to a Lorentz-invariant bootstrap model; (iv) to the apparent shape of the tachyonic elementary particles and its possible connection with the de Broglie wave-particle dualism. (author).
Tachyons and the radiation of an accelerated charge
Energy Technology Data Exchange (ETDEWEB)
The motion of an accelerated charge in a vacuum is analyzed, via the superposition principle and Fourier analysis, into uniform-motion components, which include bradyonic as well as tachyonic contributions. It is shown that the former contribute only to the induction fields whereas the latter are the source of the radiation emitted by the charge, via the Sommerfeld-Cerenkov mechanism. This result calls for a reexamination of some recently formulated theories of superluminal particles.
1982-10-15
Review of ion-based coating processes derived from the cathodic arc
International Nuclear Information System (INIS)
The cathodic vacuum arc provides a means of producing large currents of positive ions of a wide variety of materials. These ions can be utilized to produce coatings with improved properties such as higher density and adhesion. The processing is particularly useful in reactive deposition of ceramic coatings having excellent stoichiometry. In this review, emerging aspects of the technology are emphasized.
Quantum chaos in the mixmaster universe
Energy Technology Data Exchange (ETDEWEB)
A Monte Carlo simulation of the vacuum Bianchi type-IX (mixmaster) cosmology yields a significant correlation between large universe volume and high anisotropy. An analog of the model's chaotic classical behavior is seen in the break up of the universe wave function at large volume into fingers in the corners of the minisuperspace anisotropy potential.
1989-04-15
Preparation of Cluster States for Many Atoms in Cavity QED
International Nuclear Information System (INIS)
We propose a scheme for the generation of the cluster states for many atoms in cavity QED. In our scheme, the atoms are sent through nonresonant cavity fields in the vacuum states. The cavity fields are only virtually excited and no quantum information will be transferred from the atoms to the cavity fields. The advantage is that the cavities are suppressed during the procedure. The scheme can also be generalized to the ion trap system.
2007-07-15
Photodetachment of negative ion beams in the presence of a background gas
Energy Technology Data Exchange (ETDEWEB)
To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.
1987-03-01
Optical measurement of electron bunching in vacuum
International Nuclear Information System (INIS)
We report the homodyne detection of phase modulation sidebands induced on a laser beam by a coherently bunched electron beam. This provides a sensitive and nonperturbing measurement of complex Fourier time series components of the electron density. A proof-of-principle measurement of the microwave frequency component of electron density in a crossed-field device, which agrees well with a calculation of the same quantity, is reported.
On condensation of closed-string tachyons
Energy Technology Data Exchange (ETDEWEB)
An F-theory dual of a non-supersymmetric orientifold is considered. It is argued that the condensation of both open and closed string tachyons in the orientifold corresponds to the annihilation of branes and antibranes in the F-theory dual. One likely end-point of tachyon condensation is thus expected to be the vacuum of Type-IIB superstring. Some speculations are presented about the F-theory dual of the bosonic string and tachyon condensation thereof.
2002-09-09
Nonformity of the electron density in amorphous silicon films
Energy Technology Data Exchange (ETDEWEB)
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
1985-12-01
New development of external-PIXE system using a differential pumping technique
International Nuclear Information System (INIS)
A new external-PIXE system utilizing a differential pumping technique, which can completely protect the accelerator and vacuum pumps when the exit foil breaks down, has been developed. Applications to analyses of liquid and heavily-outgassing samples were successfully achieved. Also, experiments for evaluating the efficiency of the system were performed and results will be presented. (author)
1999-09-01
Multidimensional extension of the Bianchi type-IX cosmology
Energy Technology Data Exchange (ETDEWEB)
A higher-dimensional homogeneous spacetime is investigated satisfying the vacuum Einstein equations. It is assumed that the algebra of Killing vectors L admits a non-trivial Levi decomposition L=N+so(3), i.e. that the subalgebras N and so(3) do not commute. It is found that the model behaves in a non-chaotic way and cosmological dimensional reduction inevitably occurs. This model completes all the possible types within the class of higher-dimensional extensions of Bianchi type-IX cosmology.
1988-06-09
... The products can be categorised as glazed flat-plate collectors, evacuated glass-tube collectors, and unglazed plastic or low temperature collectors. Glazed flat-plate collectors and vacuum tubes are widely used for solar water heating and space heating systems in all types of buildings. Unglazed plastic collectors are used exclusively for lower temperature applications, such as outdoor swimming pools or the agrarian business. Flat-plate solar collectors are likely to ...
Magnetic diagnostic of beta poloidal and internal inductance of plasma in the TCA/BR tokamak
Energy Technology Data Exchange (ETDEWEB)
This report continues the studies of simplified methods, of magnetic diagnostics in application to TCA/BR tokamak. Here we study the accuracy of known formula for {beta}{sub 1} + l{sub 1}/2 determination from the poloidal magnetic field asymmetry. Errors of the diamagnetic measurements due to vibrations of the vacuum vessel are also considered. (author). 3 refs., 1 fig., 1 tab.
1996-12-31
In situ air stripping using horizontal wells. Innovative technology summary report
Energy Technology Data Exchange (ETDEWEB)
In-situ air stripping employs horizontal wells to inject or sparge air into the ground water and vacuum extract VOC`S from vadose zone soils. The horizontal wells provide better access to the subsurface contamination, and the air sparging eliminates the need for surface ground water treatment systems and treats the subsurface in-situ. A full-scale demonstration was conducted at the Savannah River Plant in an area polluted with trichloroethylene and tetrachloroethylene. Results are described.
1995-04-01
Heavy and light quarks in the instanton vacuum
Assuming the gluon field is well approximated by instanton configurations we derive a light quarks determinant and calculate its contribution to the specific heavy quarks correlators -- namely, the heavy quark propagator and heavy quark-aniquark correlator, receiving the instanton generated light-heavy quarks interaction terms contributions. With these knowledge we calculate the light quark contribution to the interaction between heavy quarks, which might be essential for the properties of a few heavy quarks systems.
2011-01-01
Emittance of investment casting molds
Energy Technology Data Exchange (ETDEWEB)
This document describes measurements of the directional spectral emittance of four ceramic mold materials. The work was performed with the samples at {approximately} 900{degree}C in a vacuum vessel pumped to {approximately}3 {times} 10{sup {minus}6}Torr. Results conform to expectations derived from prior work done with similar samples.
1994-07-15
Design and fabrication of a traveling-wave muffin-tin accelerating structure at 90 GHz
Energy Technology Data Exchange (ETDEWEB)
A prototype of a muffin-tin accelerating structure operating at 32 times the SLAC frequency (2.856 GHz) was built for research in high gradient acceleration. A traveling-wave design with single input and output feeds was chosen for the prototype which was fabricated by wire electrodischarge machining. Features of the mechanical design for the prototype are described. Design improvements are presented including considerations of cooling and vacuum.
1997-05-01
DC CHARACTERIZATION OF HIGH GRADIENT MULTILAYER INSULATORS
Energy Technology Data Exchange (ETDEWEB)
We have developed a novel insulator concept that involves the use of alternating layers of conductors and insulators with periods less than 1 mm. We have demonstrated that these structures perform 2 to 5 times better than conventional insulators in long pulse, short pulse, and alternating polarity applications. We present new testing results showing exceptional behavior at DC, with gradients in excess of 110kV/cm in vacuum.
2005-05-26
Canonical Gravity with Fermions
Canonical gravity in real Ashtekar-Barbero variables is generalized to allow for fermionic matter. The resulting torsion changes several expressions in Holst's original vacuum analysis, which are explicitly displayed here. This in turn requires adaptations to the known canonical (loop) quantization of gravity coupled to fermions, which is discussed on the basis of the classical analysis.
2007-01-01
A multidimensional extension of the Bianchi type-IX cosmology
International Nuclear Information System (INIS)
A higher-dimensional homogeneous spacetime is investigated satisfying the vacuum Einstein equations. It is assumed that the algebra of Killing vectors L admits a non-trivial Levi decomposition L=N+so(3), i.e. that the subalgebras N and so(3) do not commute. It is found that the model behaves in a non-chaotic way and cosmological dimensional reduction inevitably occurs. This model completes all the possible types within the class of higher-dimensional extensions of Bianchi type-IX cosmology. (orig.).
A magneto-electric quantum wheel
Here we show that self-propulsion in quantum vacuum may be achieved by rotating or aggregating magneto-electric nano-particles. The back-action follows from changes in momentum of electro-magnetic zero-point fluctuations, generated in magneto-electric materials. This effect may provide new tools for investigation of the quantum nature of our world. It might also serve in the future as a "quantum wheel" to correct satellite orientation in space.
2009-01-01
Photoinduced charge separation reactions form the basis for energy storage processes in both natural and artificial photosynthesis. Moreover, rapid reversible photoinduced electron transfer reactions are a class of photophysical phenomena that can be exploited to develop schemes for optical switching. Examples from each of these fields are discussed.
1992-01-01
Transient enhanced diffusion of oxygen in Fe mediated by large electronic excitation
International Nuclear Information System (INIS)
Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation of oxygen in a thin Fe film during its irradiation with swift heavy ions. It is observed that the adsorbed oxygen diffuses in to the Fe film. The incorporation of oxygen and its diffusion in the bulk of the film is a manifestation of extremely large electronic energy deposition by the incident ions. It is shown that the experimentally observed high diffusivity of oxygen in Fe during irradiation is due to the existence of transient melt phase of Fe.
2003-10-15
Topological excitations and second order transitions in 3D O(N) models
Energy Technology Data Exchange (ETDEWEB)
I discuss several examples of critical phenomena in O(N) models where topological excitations play an important role at criticality. I focus particular attention on the O(2) model in 3D, where recent measurements of the vortex string length distribution in equilibrium suggest the existence of a quantitative picture of the critical behavior in terms of defects. The compatibility of this perspective with renormalization group predictions is examined.
2001-01-01
Sloshing of fluid in horizontal steam generator generated by horizontal and vertical seismic motions
International Nuclear Information System (INIS)
The nuclear power plants with WWER type reactors are characterized by horizontally situated steam generators (SG). During seismic event the horizontal and vertical ground accelerations induce fluid motion in directions of longitudinal and transversal axis. Resulting dynamic forces act on the SG attachment and could cause the failure of screws. In obvious PSA scenarios, these phenomena are classified as a indirect induced LOCA. In this paper the effects of transversal sloshing of fluid are analyzed.
1989-08-14
Shaft bearing of steam turbines with large capacity
International Nuclear Information System (INIS)
The advantages and disadvantages of single-point or double-point bearing of rotors with several single shafts are illustrated by examples from the KWU series. The design features of modern bearings are described. Some results from the test program for the development of these bearings are reported. In the last section the vibration behavior of the shafts is considered. Various phenomena - like self-excited vibrations and those caused by unbalance or the influence of partial admission - are briefly discussed. (orig.).
Review of combustion processes in the dual fuel engine: the gas diesel engine
Energy Technology Data Exchange (ETDEWEB)
This review examines the characteristics of the compression-ignition type of dual-fuel engine and the combustion phenomena that affect these characteristics. The specific areas covered involve normal combustion processes, the nature and origin of engine knock, operation with LNG, and the effect of intake temperature on combustion efficiency and exhaust composition.
1980-01-01
Recent plate motions and crustal deformation
Energy Technology Data Exchange (ETDEWEB)
Reports by U.S. workers on geodetic measurements of recent plate motions or crustal deformation published in 1987-1990 are reviewed. The review begins with global plate motions, proceeds through plate boundaries in California, Alaska, and the Pacific Northwest, and finishes with volcanic phenomena, monument stability and longevity, and GPS relative position measurements. 184 refs.
1991-01-01
Quantum theory of light interstitial diffusion and other aspects of inert gas motion in solids
International Nuclear Information System (INIS)
Most diffusion phenomena in solids can be understood (or sometimes misunderstood) on a purely classical model. For light interstitials (hydrogen isotopes, the positive muon, and potentially He) there may be anomalous temperature dependences, and isotope effects, and anomalous response to electric fields and temperature gradients. Some of these anomalies are quantal in origin, and will be discussed. (author).
1980-03-01
Energy Technology Data Exchange (ETDEWEB)
After reviewing some of the mathematical foundations and numerical difficulties facing lattice QCD, I review the status of several calculations relevant to experimental high-energy physics. The topics considered are moments of structure functions, which may prove relevant to search for new phenomena at the LHC, and several aspects of flavor physics, which are relevant to understanding CP and flavor violation.
2002-09-30
Process in Plasma Research at IPJ and IPPLM, POLAND
International Nuclear Information System (INIS)
The most important results of theoretical and experimental studies of plasmas, which have been achieved at the IPJ in Swierk and IPPLM in Warsaw recently, are presented. Studies of physical phenomena in PF discharges, development of diagnostic techniques and research on new plasma technologies, as performed at IPJ, have been summarized. Studies of dense magnetized plasmas, investigation of physics and applications of laser-produced plasmas; and research on the development of advanced diagnostic techniques for the EUROATOM fusion program, as performed at IPPLM, are also described.
2006-01-01
Preliminary test conditions for KNGR SBLOCA DVI ECCS performance test
Energy Technology Data Exchange (ETDEWEB)
The Korean Next Generation Reactor (KNGR) adopts 4-train Direct Vessel Injection (DVI) configuration and injects the safety injection water directly into the downcomer through the 8.5'' DVI nozzle. Thus, the thermal hydraulic phenomena such as ECCS mixing and bypass are expected to be different from those observed in the cold leg injection. In order to investigate the realistic injection phenomena and modify the analysis code developed in the basis of cold leg injection, thermal hydraulic test with the performance evaluation is required. Preliminarily, the sequence of events and major thermal hydraulic phenomena during the small break LOCA for KNGR are identified from the analysis results calculated by the CEFLASH-4AS/REM. It is shown from the analysis results that the major transient behaviors including the core mixture level are largely affected by the downcomer modeling. Therefore, to investigate the ...
1999-03-01
Phonon relaxation and internal friction in heterogeneous systems based on poly(vinyl chloride)
British Library Electronic Table of Contents (United Kingdom)
Phonon relaxation and internal friction in kaolin-and bentonite-filled PVC composites are studied. By varying the temperature and/or content of the ultrafine mineral filler in the PVC, one can control the contribution from phonon viscosity, damping force, and the effect of viscosity into the energy dissipation of ultrasonic oscillations in the MHz frequency interval. The dynamic character of the measurements makes it possible to differentiate between relaxation phenomena in the composites and to suggest methods for their controlled changes.
2010-01-01
PIV measurements of flow structures in a spray dryer
DEFF Research Database (Denmark)
Stereoscopic Particle Image Velocimetry (PIV) measurements are made in horizontal planes in a simplified scale model of a spray dryer using water as fluid. The sample rate was sufficient to resolve phenomena at lower frequencies. Data reveal asymmetric velocity fields in both mean fields and dynamics. Data were analysed using Proper Orthogonal Decomposition (POD). An important periodic event is an elongation of the jet core cross section that results in a downstream displacement of the jet towards the chamber wall.
2011-01-01
The primary of this thesis is the derivation of nonisothermal equations for isotropic viscoelastic materials with the help of the thermodynamics. Because the description of all phenomena would be too ambitious for one thesis, the area of investigation has...
1996-01-01
International Nuclear Information System (INIS)
This paper summarizes a method to evaluate the possible effects of magnetohydrodynamic-electromagnetic pulse (MHD-EMP) on power systems. This method is based on the approach adapted to study the impact of geomagnetic storms on power systems. The paper highlights the similarities and differences between the two phenomena. Also presented are areas of concern which are anticipated from MHD-EMP on the overall system operation. 12 refs., 1 fig.
1986-01-01
Magnetic flocculation and filtration
Energy Technology Data Exchange (ETDEWEB)
A model is available in predicting flocculation frequencies between particles of various properties under the influence of a magnetic field. This model provides a basic understanding of fundamental phenomena, such as particle-particle and particle-collector interactions, occurring in HGMF (high gradient magnetic field), and will be extended to describe experimental data of particle flocculation and filtration and predict the performance of high- gradient magnetic filters. It is also expected that this model will eventually lead to a tool for design and optimization of magnetic filters for environmental, metallurgical, biochemical, and other applications.
1996-10-01
Instabilities in condensing turbine flows
Energy Technology Data Exchange (ETDEWEB)
Transonic flows with heat addition due to condensation are important to many technical applications, e.g. to the last stages of large steam turbines, where nucleation and droplet formation become important. Our current research concentrates on the interaction of vortex shedding with condensation in turbines and on rotor/stator interaction in nucleating flows. Both phenomena lead to a significant change of the condensate mass and the droplet radius distribution in the downstream two-phase flow regime. (orig.)
2000-07-01
Influence of relaxation phenomena in liquid phase on magnetic anisotropy of metallic glasses
International Nuclear Information System (INIS)
It if first shown, that the effective field of uniaxial magnetic anisotropy of Fe-Cr-P-C and Fe-Ni-B-Si system amorphous alloys is reduced with an increase of the source melt isothermal exposure time. The behaviour noted is conditioned by microcoherence and relaxation processes in the nonequilibrium liquid phase after crystal-liquid phase transition.
1996-12-01
International Nuclear Information System (INIS)
A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.
1988-12-09
Fluctuations of the energy of Stokes pulses of resonance coherent SRS
International Nuclear Information System (INIS)
An analytic solution is obtained for the equations of resonance coherent SRS by neglecting the population of the final level of the Raman transition for the systems with the active-medium length that is smaller than the wavelength of the incident light. For the extended systems, a numerical solution is obtained. The energy distribution of the Stokes pulses is found. The large-scale (about 100%) fluctuations of the Stokes radiation energy were observed in the case of unsaturated amplified spontaneous emission. (nonlinear optical phenomena)
2000-11-30
Downward penetration of hot UO/sub 2/ into basalt concrete
Energy Technology Data Exchange (ETDEWEB)
Following a postulated meltdown accident, the integrity of containment building structural material under attack by hot molten core debris and the safeguard of environment against radiological releases constitutes the final line of defense in PAHR safety assessment. Such assessment requires a good knowledge of UO/sub 2//interaction and penetration with different types of concrete. The present study focuses on the phenomena associated with core debris interaction/penetration with substrate basalt concrete.
1983-01-01
Confinement, chiral symmetry, and the lattice
Two crucial properties of QCD, confinement and chiral symmetry breaking, cannot be understand within the context of conventional Feynman perturbation theory. Non-perturbative phenomena enter the theory in a fundamental way at both the classical and quantum level. Over they years a coherent qualitative picture of the interplay between chiral symmetry, quantum mechanical anomalies, and the lattice has emerged and is reviewed here.
2011-01-01
Comparison of steam-generator liquid holdup and core uncovery in two facilities of differing scale
Energy Technology Data Exchange (ETDEWEB)
This paper reports on Run SB-CL-05, a test similar to Semiscale Run S-UT-8. The test results show that the core was uncovered briefly during the accident and that the rods overheated at certain core locations. Liquid holdup on the upflow side of the steam-generator tubes was observed. After the loop seal cleared, the core refilled and the rods cooled. These behaviors were similar to those observed in the Semiscale run. The Large-Scale Test Facility (LSTF) Run SB-CL-06 is a counterpart test to Semiscale Run S-LH-01. The comparison of the results of both tests shows similar phenomena. The similarity of phenomena in these two facilities build confidence that these results can be expected to occur in a PWR. Similar holdup has now been observed in the 6 tubes of Semiscale and in the 141 tubes of LSTF. It is now more believable that holdup may occur in a full-scale steam generator with 3000 or more tubes. These results confirm the scaling of these ...
1987-01-01
Analysis of Selected Two-Phase Flow Phenomena in VVER Reactors with Horizontal Steam Generators
International Nuclear Information System (INIS)
Since 1984 the thermal-hydraulic code ATHLET has been also applied for the analyses of LOCA and transients in VVER plants. The specific design of these plants especially of the steam generator design requires a specific modelling of the phenomena which may occur under LOCA and transient conditions in these plants. Differences in design compared to the design of western reactors have been briefly listed. Specific phenomena occurring under small leak accidents are shortly described. The consideration of the simulation of the boiler-condenser mode illustrates the modelling requirements for a code which may be applied to the prediction of such a thermal-hydraulic behaviour. Facing the lack of experimental data, the reliability of the simulation has been discussed by means of plausibility studies based on the momentum balance for steam and water. In summary: The VVER reactors differ in design compared to reactors of western design. The VVER design, ...
1992-04-06
A phenomenological interpretation of trace impurity transport
Energy Technology Data Exchange (ETDEWEB)
An interpretive theory of trace impurity transport in tokamaks is presented. It is based on an earlier phenomenological approach developed by the authors for describing tokamak plasma transport experiments. The present model is used to explain disparate phenomena observed in ALCATOR C and DITE in a unified phenomenological framework. Predictive numerical calculations are presented for DITE conditions. If experimentally confirmed, the model could be used to correlate plasma properties with trace impurity behaviour. (orig.)
1989-10-01
Understanding and controlling transient enhanced dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 ...
1995-12-31
Understanding and controlling transient enhanced dopant diffusion in silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 ...
Transient enhanced diffusion of Sb and B due to MeV silicon implants
Energy Technology Data Exchange (ETDEWEB)
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at ...
1997-06-01
Transient enhanced diffusion of Sb and B due to MeV silicon implants
International Nuclear Information System (INIS)
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same ...
Transient enhanced diffusion in preamorphized silicon: the role of the surface
Energy Technology Data Exchange (ETDEWEB)
Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x{sub EOR} from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x{sub EOR}. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and provides conclusive evidence that ...
1999-01-02
Transient enhanced diffusion in preamorphized silicon: the role of the surface
International Nuclear Information System (INIS)
Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x_E_O_R from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x_E_O_R. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and provides conclusive evidence that the ...
1999-01-02
The effect of boron implant energy on transient enhanced diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results imply there are at least ...
1997-02-01
International Nuclear Information System (INIS)
Repassivation behavior and IGA resistance of nickel base alloys containing 0#approx#30 wt% chromium was investigated in high temperature acid sulfate solution. (1) The repassivation rate was increased with increasing chromium content. And so the amounts of charge caused by the metal dissolution were decreased with increasing chromium content. (2) Mill-annealed Alloy 600 suffered IGA at low pH environment below about 3.5 at the fixed potentials above the corrosion potential in 10%Na_2SO_4+H_2SO_4 solution at 598K. On the other hand, thermally-treated Alloy 690 was hard to occur IGA at low pH environments which mill-annealed Alloy 600 occurred IGA. (3) It was considered that the reason, why nickel base alloys containing high chromium content such as Alloy 690 (60%Ni-30%Cr-10%Fe) had high IGA/SCC resistance in high temperature acidic solution containing sulfate ion, is due to both the promotion of the repassivation and the suppression of the film ...
1991-08-25
International Nuclear Information System (INIS)
Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering spectra (RBS) showing the oxide film and composition isothermally ...
Energy Technology Data Exchange (ETDEWEB)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing ...
1997-11-01
International Nuclear Information System (INIS)
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n ...
International Nuclear Information System (INIS)
Thermochromic tungsten-doped vanadium dioxide (VO2) powders were successfully synthesized by thermal reduction using V2O5 as a vanadium precursor. The products were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The results indicated that W was successfully doped into the crystal lattice of VO2 matrix, and prepared tungsten-doped VO2 had a rod-like morphology. The effects of reducing temperature and annealing temperature on the crystallographic structures were also discussed. The phase transition temperature (Tt) of VO2 could be simply tuned by changing the doping concentration of tungsten. When the doping concentration was 1.58 mol%, the Tt could be reduced to 37.8 oC from initial 69.5 oC, suggesting that tungsten-doped VO2 possesses prominent thermochromic properties and optical switching characters. It has shown that this convenient and efficient ...
2010-08-20
Energy Technology Data Exchange (ETDEWEB)
Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10{sup -5} S/cm at room temperature for the film annealed at 800 deg. C for 30 min.
2003-02-03
International Nuclear Information System (INIS)
Li_1_._3Al_0_._3Ti_1_._7(PO_4)_3 thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li_1_._3Al_0_._3Ti_1_._7(PO_4)_3 thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10"-"5 S/cm at room temperature for the film annealed at 800 deg. C for 30 min.
2003-02-03
Positioning of self-assembled InAs quantum dots by focused ion beam implantation
International Nuclear Information System (INIS)
Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from ...
2006-07-01
Pole placement technique for PSS and TCSC-based stabilizer design using simulated annealing
Energy Technology Data Exchange (ETDEWEB)
A pole placement technique for power system stabilizer (PSS) and thyristor controlled series capacitor (TCSC) based stabilizer using simulated annealing (SA) algorithm is presented in this paper. The proposed approach employs SA optimization technique to PSS (SAPSS) and TCSC-based stabilizer (SACSC) design. The design problem is formulated as an optimization problem where SA is applied to search for the optimal setting of the proposed SAPSS and SACSC parameters. A pole placement-based objective function to shift the dominant eigenvalues to the left in the s-plane is considered. The proposed SAPSS and SACSC have been examined on a weakly connected power system with different disturbances, loading conditions, and system parameter variations. Eigenvalue analysis and nonlinear simulation results show the effectiveness and the robustness of the proposed stabilizers and their ability to provide efficient damping of low frequency oscillations. In addition, the performance ...
2000-11-01
Optimization of advanced PMOS junctions using Ge, B and F co-implants
International Nuclear Information System (INIS)
The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ ...
2005-08-01
Optimization of INCOLOY alloy 800 mechanical properties for various power plant requirements
International Nuclear Information System (INIS)
The AMSE Boiler Code development of design stresses and their optimization for alloys 800 and 800H for conventional and nuclear power plants have coincided with many successful trial installations of these grades of alloy 800. These trial installations, along with laboratory tests, have shown that alloy 800H can be used for long times with a retention of good mechanical properties, including ductility. While gamma prime can be formed, it soon loses its detrimental effect on ductility in service. Sensitization of the alloy also occurs but it, too, has a decreasing effect on corrosion resistance with time in service, especially at elevated temperatures. The authors discuss all of these aspects and conclude that alloy 800 perhaps with low carbon control in the annealed (1800 to 1950degF)(982 to 1066degC) condition gives the optimum combination of properties to 1050degF(566degC) and alloy 800H (.05 to .10%C) solution annealed at 2100 to 2200degF ...
Neutron irradiation of superconducting compounds
International Nuclear Information System (INIS)
The effects of neutron irradiation on the superconducting and normal state properties of alloys and compounds are presented. Particular emphasis is placed on the A-15 compounds where the effects of neutron irradiation on Tsub(c), Hsub(c_2), long range order parameter and lattice parameter are described. Large depressions (up to 80%) in Tsub(c) are observed for all the A-15 compounds studied with the exception of Mo_3Os where much smaller decreases in Tsub(c) are seen. Along with the decrease in Tsub(c) and increase in lattice parameter, the degree of long range order, as measured by X-ray and neutron diffraction, decreases. Also presented are the results of isothermal and isochronal anneals up to 900"0C. The unirradiated value of Tsub(c) can be restored by annealing, and for those systems where measurements have been made, recovery of the lattice parameter and order parameter also takes place. The effects observed in irradiated material, ...
Nanocrystallization of soft magnetic Fe-Co-Zr-Cu-B alloys
International Nuclear Information System (INIS)
In the present study, Fe_4_1Co_4_1 B_1_0Zr_7Cu_1 alloy has been investigated in order to evaluate its thermal stability and structure after heat treatment, as well as the impact of heat treatment on magnetic properties. X-ray diffractometry, differential scanning calorimetry, chemical composition microanalysis, transmission electron microscopy, and magnetic hysteresis loop measurement techniques were employed. The crystallization temperature of the as-quenched alloy is 490"oC (continuous heating at 5 "oC/min). The melt spun ribbon having 27 #mu#m in thickness was annealed for 1 hour at temperatures from 400 to 700 "oC. The alloy after treatment at about 550"oC underwent primary crystallization, with the average size of crystals under 20 nm. This specimen shows the coercive field of 38 A/m, as compared to about 160 A/m reported for a similar alloy (Fe_4_4Co_4_4B_4Zr_7Cu_1) with a similar structure, annealed at 600"oC. (author)
2001-09-23
Energy Technology Data Exchange (ETDEWEB)
Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si{sub 1-x-y}Ge{sub x}C{sub y} during 750{sup o}C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {l_brace}311{r_brace} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairing reaction that successfully simulates carbon suppression of boron TED at ...
2001-08-15
International Nuclear Information System (INIS)
Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si_1_-_x_-_yGe_xC_y during 750"oC inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes #left brace#311#right brace# defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C_iC_s) pairing reaction that successfully simulates carbon suppression of boron TED at 750"oC for ...
2001-08-15
Material and process improvements in condenser tubing
Energy Technology Data Exchange (ETDEWEB)
The reliability of the surface condenser is a key factor in plant performance level and maintenance cost optimization. This is especially the case for thermal nuclear plants where condenser raw wa-ter ingress can introduce contamination into the chemically-controlled, steam/water loop potentially causing damage to sensitive equipment. Two important parameters must be taken into account when attempting to optimize the quality and the reliability of condenser tubing. They include selecting the appropriate material according to the cooling water corrosion level present. A second and equally important parameter is the manufac-turing of the tubing product itself. This paper will identify methods to optimize manufacturing processes and improve tubing quality, according to VALTIMET's 30 years of condenser welded tubing production experience. Those methods complete the core manufacturing process (forming and welding), through improvement of the metallurgical homogeneity (Roll Sink ...
2010-07-01
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from ...
2004-11-15
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
International Nuclear Information System (INIS)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the ...
2004-11-01
British Library Electronic Table of Contents (United Kingdom)
Ferroelectric barium strontium titanate (Ba0.7Sr0.3TiO3)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH3(CH2)3CH(C2H5)CO2]2], strontium 2-ethylhexanoate [Sr[CH3(CH2)3CH(C2H5)CO2]2] and titanium(IV) isopropoxide [TiOCH(CH3)2]4 precursors using a modified sol-gel technique. The precursor except [TiOCH(CH3)2]4 were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550degreeC for 1h in air. The lattice constants "a" and "c" were found to be 3.974A and 3.990A, respectively. The grain...
2008-01-01
In situ, real-time RBS measurement of solid state reaction in thin films
International Nuclear Information System (INIS)
The applicability of in situ, real-time RBS is demonstrated by characterizing the growth of thin Pd_2Si films on Si left angle 111 right angle substrates using isothermal as well as non-isothermal annealing. In contrast to the currently fashionable in situ ramped resistance technique, it is possible to extract the activation energy from a single run with a constant heating rate. The results, which are in excellent agreement with the literature, will be compared for isothermal annealing, fitting an appropriate model for the growth process to data from a single run and a Kissinger-like analysis with different ramp rates. In situ, real-time RBS was also used to study marker motion during CrSi_2 formation in the Si left angle 100 right angle /Pd_2Si/Cr system. It is possible to distinguish between the following mechanisms: (1) CrSi_2 formation via dissociation of the Pd_2Si at the Pd_2Si/Cr interface and subsequent reaction of Pd to form Pd_2Si at ...
1998-04-01
Growth and characterisation of electrodeposited ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of ...
2008-04-30
Formation of high resistivity regions in [ital p]-type Al[sub 0. 5]In[sub 0. 5]P by ion implantation
Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.
1993-12-06
Formation kinetics and work function tuning of Pd_2Si fully silicided metal gate
International Nuclear Information System (INIS)
The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in the opposite direction to that of the NiSi FUSI gate for As, P, Sb, and BF_2. A wide ...
2007-04-01
British Library Electronic Table of Contents (United Kingdom)
Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO2/SiOx /SiO2/Si(100) stacked structure. The chemical composition of SiOx layer was controlled by changing the SiH4, He, and O2 gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 1012 cm-2 carriers are injected to or emitted from Si nanocrystals. The duration of 1 V shift in flatband vo...
2010-01-01
EPR investigation of some irradiated traditional oriental spices
International Nuclear Information System (INIS)
The X-band EPR spectra of unirradiated and "6"0 Co gamma ray irradiated cardamom (Elettaria cardamomum L. Maton, Zingiberaceae), ginger ((Zingiber officinale Rosc., Zingiberaceae), saffron (Crocus sativus L., Iridaceae), and curry have been investigated at room temperature. All unirradiated spices presented a weak resonance line with g-factors around free-electron ones, most probably due to the presence of semiquinones, previously reported to have paramagnetic properties. After gamma ray irradiation at absorbed dose up to 11.3 kGy we have noticed in all spices the presence of complex EPR spectra consisting of a superposition of at last two different paramagnetic species whose amplitude increase monotonously with the absorbed dose. A 100 deg. C isothermal annealing of 11.3 kGy irradiated samples has shown a differential reduction of amplitude of various components that form the initial spectra, but even after 5 h of thermal treatment, the remaining amplitude ...
2005-09-13
Deuterium retention in titanium alloys exposed in PLT
International Nuclear Information System (INIS)
Specimen strips of pure alpha titanium and beta titanium alloy were exposed to a range of up to 46 deuterium plasma discharges in the Princeton Large Torus Tokamak (PLT) under simulated first wall conditions, and the amount of trapped deuterium in these specimens was measured, using carbon as a calibration standard for trapping. The Deuterium Nuclear Microprobe was used to study the total trapped deuterium and the deuterium depth distribution in the exposed materials before and after annealing at 373 and 423"0K. The Scanning Auger Microprobe was used to identify the effects of surface impurities on the deuterium distribution. Results indicate that about 20 to 40% of the incident deuterium was trapped by the surface and about 90% of the trapped deuterium remained in a 20A carbonaceous film deposited during plasma exposure. Annealing resulted in a gradual loss from the film. These results indicate the importance of impurity film formation which ...
1981-07-01
Depth dependence of defect evolution and TED during annealing
Energy Technology Data Exchange (ETDEWEB)
A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si{sup +} implant conditions have been considered. TEM analysis for the highest energy/dose shows that {l_brace}1 1 3{r_brace} defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, {l_brace}1 1 3{r_brace} defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. The results provide a critical test of the ability of physical models to simulate defect evolution and ...
2004-02-01
Depth dependence of defect evolution and TED during annealing
International Nuclear Information System (INIS)
A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si"+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that #left brace#1 1 3#right brace# defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, #left brace#1 1 3#right brace# defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. The results provide a critical test of the ability of physical models to simulate defect ...
2004-02-01
Characterization and nanopatterning of Ni{sub 2}MnIn Heusler films
Energy Technology Data Exchange (ETDEWEB)
The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at substrate temperatures of 50 C and annealed up to ...
2008-07-01
Energy Technology Data Exchange (ETDEWEB)
For a reliable design against fatigue failure of high-temperature components of different types of the heat resistant material Alloy 800, verified parameters of the low-cycle fatigue (LCF) behaviour are required. These parameters were obtained by a scatterband evaluation of the results of low-cycle fatigue tests, using a computerized data bank which includes all available actual data sets. The results of the evaluation are presented as mean fatigue curves with the upper and lower boundary limits of the scatterbands. For the type Alloy 800 in the recrystallization annealed condition, the results cover a temperature range from 20 to 750deg C; for the solution annealed types they cover a temperature range from 20 to 950deg C. Specimens tested in HTR helium at high temperatures had longer lives than specimens tested in air. This effect was represented quantitatively by the ratio of the total strain ranges from tests in HTR helium and air as a ...
1990-05-01
Spinodal decomposition and giant magnetoresistance
International Nuclear Information System (INIS)
We explore the relation of nanostructures with the appearance of giant magnetoresistance (GMR) in melt-spun CuCo ribbons. We find by energy-filtered transmission electron microscopy that the ribbons are composed of a periodic distribution of Co within the Cu, as in spinodal decomposition. The lamellar structure should thus be associated with GMR, as only a small percentage of the Co is present in the form of grains. This is counterintuitive, for no clear interfaces are present as required by standard models, and the period of the composition oscillation (43-52 nm) is an order of magnitude larger than the mean free paths for electrons. Upon annealing, a secondary spinodal decomposition appears following the same direction as the original.
2006-10-01
Energy Technology Data Exchange (ETDEWEB)
The reactions of native bovine catalase with superoxide and solvated electrons have been investigated using three different methods for generating these reducing substrates: [gamma]-radiolysis of oxygenated or deaerated buffer solutions in the presence of an OH radical scavenger; either xanthine or acetaldehyde with xanthine oxidase; and low-temperature (77 K) [gamma]-radiolysis of buffered ethylene glycol/water solutions with subsequent annealing of samples at 183 K. (Author).
1992-11-01
Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation
Energy Technology Data Exchange (ETDEWEB)
Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.
2007-09-25
Energy Technology Data Exchange (ETDEWEB)
Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.
1996-12-01
RBS Characterization of Yttrium Iron Garnet Thin Films
International Nuclear Information System (INIS)
Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)
2008-12-13
Processing and properties of novel high strength {gamma}-TiAl
Energy Technology Data Exchange (ETDEWEB)
Extrusion and subsequent heat treatment of the alloys investigated can lead to reasonable room temperature ductilities and very high strengths being developed compared to the cast + HlPed material. In Ti-45Al-10Nb reasonably room temperature fracture toughness was developed which did not depend on extrusion temperature. For the alloy Ti-48Al-2Cr-0.2C a previously developed solution and ageing heat treatment did not increase the high temperature strength properties when compared to the 'annealed' condition. (orig.)
2000-07-01
Point defect supersaturation and enhanced diffusion in SPE regrown silicon
Energy Technology Data Exchange (ETDEWEB)
Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.
1984-01-01
Point defect supersaturation and enhanced diffusion in SPE regrown silicon
International Nuclear Information System (INIS)
Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.
In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.
2006-01-01
Neutron irradiation effects in austenitic alloys
International Nuclear Information System (INIS)
The post (neutron) -irradiation high-temperature tensile and creep-rupture properties, deformation and fracture characteristics of austenitic alloys, particularly solution annealed Type 316 steel, are surveyed and correlated with the damage structures developed as a function of irradiation temperature (and dose). The mechanisms proposed to explain the irradiation-induced changes in properties and behaviour are summarised. The factors responsible for the observed differences in the post-irradiation and 'in-reactor' creep-rupture properties and behaviour of an austenitic steel are discussed in terms of the helium gas and stress driven growth of small intergranular bubbles and the atom plating associated with their growth and coalescence. (author).
1980-03-01
Modeling of extended defects in silicon
Energy Technology Data Exchange (ETDEWEB)
Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.
1997-11-01
Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing
International Nuclear Information System (INIS)
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
2005-11-14
High current implantation of negative copper ions into silica glasses
Energy Technology Data Exchange (ETDEWEB)
High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.
1997-12-01
Growth of epitaxial LaAlO{sub 3} and CeO{sub 2} films using sol-gel precursors
Energy Technology Data Exchange (ETDEWEB)
LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.
1996-04-01
International Nuclear Information System (INIS)
In a program to develop a metastable beta alloy with improved fracture toughness, it was found that the tensile ductility of the alloy Ti-8 Mo-4.5 Cr-2.5 Al was strongly dependent on both processing history and annealing temperature. Evaluation of the microfracture mode of tensile samples by scanning electron microscope and metallographic techniques showed that the presence of a continuous grain boundary alpha is the most significant parameter controlling the ductility and is highly detrimental. It is concluded that, for optimum processing, the material must be worked prior to aging to avoid this grain boundary phase.
Creep properties of modified 9 Cr-1 Mo steel
Energy Technology Data Exchange (ETDEWEB)
Creep properties of modified 9 Cr-1 Mo steel, an alloy significantly improved in elevated-temperature strength over 2 1/4 Cr-1 Mo and other similar alloys, are presented here. Data are primarily on material in the normalized and tempered condition. Effects of variables such as isothermal annealing treatment, cold work, normalizing temperature, tempering temperature, notch, and biaxial stress state have also been examined. Data analysis and comparisons have shown that modified 9 Cr-1 Mo alloy is very insensitive in response to several material variables, heat treatments, and specimen design variables.
1983-01-01
International Nuclear Information System (INIS)
XAFS data of metallic glass Al_0_._9_1La_0_._0_9 and a crystalline phase Al_1_1La_3 formed by annealing of the glass were measured at the La L_3 edge at T=12 K and analyzed using the radial distribution function method. The shortest La-Al distance appeared to be distinctively smaller within the glass than in the crystal. This difference decreases the disparity in size of La and Al in the alloy, allowing their mixing in the glassy state. ((orig.)).
1994-09-02
Tritium release from lithium orthosilicate pebbles deposited with palladium
International Nuclear Information System (INIS)
Full text of publication follows: Slightly over-stoichiometric lithium orthosilicate pebbles have been selected as one optional breeder material for the European Helium Cooled Pebble Bed (HCPB) blanket. This material has been developed in collaboration of Research Center Karlsruhe and the Schott Glass, Mainz. The lithium orthosilicate pebbles are fabricated from lithium hydroxide and silica by a melting and spraying method in a semi-industrial scale facility. Lithium hydroxide was selected as the precursor since enriched lithium hydroxide is commercially available. The lithium orthosilicate pebbles produced by the process contains oxide phases besides orthosilicate, but it was also found that the oxide phases can be decomposed by annealing at high temperatures. The lithium orthosilicate pebbles produced in this way possesses satisfactory pebble characteristics. Therefore, the authors performed out-of-pile annealing tests using the lithium ...
2007-12-10
Structures and properties of fluorinated amorphous carbon films
International Nuclear Information System (INIS)
Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF_4) and acetylene (C_2H_2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF_4/(CF_4+C_2H_2). The samples were annealed at 300 deg. C for 30 min. in a N_2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF_4 flow ratio (R=0.97) produced more sp"3 linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 #mu#s and an energy gap of #approx#2.75 eV were observed in both the as-deposited and after annealing conditions. The short ...
2004-07-01
Energy Technology Data Exchange (ETDEWEB)
Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 {omega}/cm up to the ...
2004-06-30
International Nuclear Information System (INIS)
Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi_2 layers with the low sheet resistance value as low as congruent with 4.4 #OMEGA#/cm up to the annealing temperature as high as ...
2004-06-30
Energy Technology Data Exchange (ETDEWEB)
Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the ...
1994-12-01
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution ...
1997-05-01
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left ...
Molecular dynamics studies of silicon ion implantation
Energy Technology Data Exchange (ETDEWEB)
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage ...
1994-12-31
International Nuclear Information System (INIS)
Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg. C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 deg. C. The surface of Au and Ti/Au contacts annealed at 900 deg. C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused ...
2006-11-15
International Nuclear Information System (INIS)
Epitaxial CeO_2 buffer layers were fabricated by pulsed laser deposition (PLD) on r-cut sapphire substrates. An atomically flat CeO_2 surface with a high density of nanodots was formed by a self-assembly process. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy investigation showed that the nanodots were CeO_2 other than impurities. YBa_2Cu_3O_7_-_#delta# (YBCO) thin films were then grown on the annealed and the as-grown CeO_2-buffered sapphires by PLD. The transport measurement results showed that the nanodots enhanced the effective pinning potential and significantly increased critical current density (J _c). Especially, YBCO films with an annealed CeO_2 buffer layer showed a high J _c peak when the applied field was directed along the c-axis of YBCO. Cross-section transmission electron microscopy investigation revealed that the J _c peaks in YBCO with annealed CeO_2 buffer layer is ...
2006-12-05
Growth of high-density Ru- and RuO_2-composite nanodots on atomic-layer-deposited Al_2O_3 film
International Nuclear Information System (INIS)
Growth of Ru- and RuO_2-composite (ROC) nanodots on atomic-layer-deposited Al_2O_3 film has been studied for the first time using ion-beam sputtering followed by post-deposition annealing (PDA). X-ray photoelectron spectroscopy analyses reveal that RuO_2 and Ru co-exist before annealing, and around 10% RuO_2 is reduced to metallic Ru after PDA at 900 deg. C for 15 s. Scanning electron microscopy measurements show that well-defined spherical ROC nanodots are not formed till the PDA temperature is raised to 900 deg. C. The mean diameter of the nanodots enlarges with increasing PDA temperature whereas the nanodot density decreases, which is attributed to coalescence process between adjacent nanodots. It is further illustrated that the resulting nanodot size and density are weakly dependent on the annealing time, but are markedly influenced by the decomposition of RuO_2. In this article, the ROC nanodots with a high density of ...
2007-02-15
Enhanced corrosion resistance by sol-gel-based ZrO_2-CeO_2 coatings on magnesium alloys
International Nuclear Information System (INIS)
The physical, chemical and mechanical properties of magnesium alloys make them attractive materials for automotive and aerospace applications. However, these materials are susceptible to corrosion and wear. This work discusses the potential of using sol-gel based coatings consisting of ZrO_2 and 15 wt.% of CeO_2. The CeO_2 component provides enhanced corrosion protection, while ZrO_2 impart corrosion as well as wear resistance. Coating deposition was performed by the dip coating technique on two magnesium alloy substrates with different surface finishes: AZ91D (as-casted, sand-blasted, and machined) and AZ31 (rolled and machined). All as-deposited coatings (xerogel coatings) were then subjected to 10 h annealing: a temperature of 180 C was applied to the AZ91D alloy and 140 C to the AZ31 alloy. Morphological and structural properties of the annealed coatings were investigated by scanning electron microscopy, atomic force microscopy and ...
2005-02-01
Energy Technology Data Exchange (ETDEWEB)
Using conventional deep level transient spectroscopy (DLTS), we have characterized the defects introduced in OMVPE n-GaAs at 15 K by 5.4 MeV alpha particle irradiation from an americium 241 radio-nuclide. After this low temperature irradiation two new defects not yet reported for alpha irradiated GaAs before, E[alpha]7 and E[alpha]9, were detected 0.07 eV and 0.19 eV below the conduction band, respectively. The introduction rates of E[alpha]7 and E[alpha]9 are calculated to be 41 cm[sup -1] and 187 cm[sup -1] respectively. It was observed that both defects obeyed first order annealing kinetics, with E[alpha]9 being removed at 225 K and E[alpha]7 at 245 K corresponding to the well known stage I annealing region. The annealing rate of E[alpha]7 corresponds to an activation energy of 0.86 eV, with a pre-exponential factor of 1.0 x 10[sup 15]s[sup -1]; and the removal of E[alpha]9 has an activation energy of 0.88 eV and a ...
1993-08-01
International Nuclear Information System (INIS)
This paper discusses the structural and compositional changes at the nanometer scale associated with the nucleation and growth of #alpha# precipitates in the #beta# titanium alloy Ti-5553 (Ti-5Al-5Mo-5 V-3Cr-0.5Fe) with #omega# precipitates acting as heterogeneous nucleation sites. The microstructural evolution in this alloy, during #beta#-solutionizing, quenching and aging type heat-treatments, has been investigated by combining results from scanning electron microscopy, orientation imaging microscopy, transmission electron microscopy, high-resolution TEM and three-dimensional atom probe (3DAP) tomography. Athermal #omega# precipitates form in this alloy on quenching from above the #beta# transus temperature. On isothermal annealing at low temperatures, these #omega# precipitates coarsen to form chemically ordered #omega# precipitates, accompanied by the nucleation of the stable #alpha# phase. Annealing at higher temperatures leads to ...
2009-04-01
Hard, infrared black coating with very low outgassing
Energy Technology Data Exchange (ETDEWEB)
Infrared astronomical instruments require absorptive coatings on internal surfaces to trap scattered and stray photons. This is typically accomplished with any one of a number of black paints. Although inexpensive and simple to apply, paint has several disadvantages. Painted surfaces can be fragile, prone to shedding particles, and difficult to clean. Most importantly, the vacuum performance is poor. Recently a plasma enhanced chemical vapor deposition (PECVD) process was developed to apply thick (30 {micro}m) diamond-like carbon (DLC) based protective coatings to the interior of oil pipelines. These DLC coatings show much promise as an infrared black for an ultra high vacuum environment. The coatings are very robust with excellent cryogenic adhesion. Their total infrared reflectivity of < 10% at normal incidence approaches that of black paints. We measured outgas rates of <10{sup -12} Torr liter/sec cm{sup 2}, comparable to bare ...
2008-06-02
First plasma experiment on spherical tokamak device UTST
International Nuclear Information System (INIS)
The UTST (University of Tokyo Spherical Tokamak) device was constructed for the purpose of exploring the formation of ultra-high beta ST (Spherical Tokamak) plasma using the double null plasma merging method. When two plasmas merge together to form a single plasma, magnetic field lines reconnect, and the magnetic field energy is converted to the plasma kinetic energy, increasing the plasma beta. The merging start-up has been demonstrated in the TS-3/4, START and MAST devices using coils inside the vacuum vessel and TS-3 plasma obtained 50% beta. In order to demonstrate the start-up in a more reactor relevant situation, UTST has all poloidal field coils outside the vacuum vessel. The first plasma experiment on the UTST was performed from December, 2007. In the result, the plasma obtained 10 kA by using only outer PF coils and single ST was generated at the lower area (z=-0.3 - -1.0[m]) close to a washer gun. This result suggests that another ...
2009-04-01
Antioxidant properties of natural substances in irradiated fresh poultry
Energy Technology Data Exchange (ETDEWEB)
This study was undertaken to determine if a combined treatment (marinating in natural plant extracts or vacuum) with irradiation could have a synergistic effect, in order to prevent the lipid oxidation resulting in the development of undesirable flavours. The fresh chicken legs were irradiated at 0,3 and 5 kGy. The fatty acids composition of lipids was identified using gas liquid chromatography. The effect of irradiation treatment combined with a pre-treatment on the fatty acids composition was followed. The day after irradiation, ten panallists were asked to evaluate, using the instruction scaling, the overall appearance, the odor, the flavor and the overall acceptability of the samples. The major fatty acids identified in lipids were oleic acid, palmitic acid, palmitoleic acid and stearic acid. Pre-treatments have a significant effect on linoleic acid (C18:2) and higher fatty acids. The unsaturated fatty acids derived from phospholipids appeared to be more ...
1998-06-01
All-metal divided vaccum joints with small force of sealing
International Nuclear Information System (INIS)
The structure of a demountable vacuum joint designed for operation from -120 to +120 deg C is developed and tested. Requirements of especially low gas release from the materials used have been fulfilled; the same concerns low sealing efforts, repeated action and keeping tightness under loads, indium being used as a sealant. Experimental studies of demountable vacuum joints, dia 100,125,140,160,180 and 200 mm, with an indium sealant permit to make the following conclusions: 1. The joints are sealed at sealing specific efforts of 0.4 kg/mm (without considering atmospheric pressure). 2. The joints retain tightness at opening and closing a cover five times and under +-120 deg C. 3. To ensure repeated operation of the joint with continued stable sealing effort, one should make sure the sealed surfaces coincide at repeated sealing. 4. When operating demountable vaccum joints with indium sealant, one must take into account the time factor, since time ...
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