H2/Ar and vacuum annealing effect of ZnO thin films deposited by RF magnetron sputtering system
British Library Electronic Table of Contents (United Kingdom)
The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The ...
2010-01-01
International Nuclear Information System (INIS)
The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min ...
2007-09-01
Study on the solid state reaction between bilayered Pd/Au films and silicon substrates
British Library Electronic Table of Contents (United Kingdom)
Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...
2006-01-01
International Nuclear Information System (INIS)
As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO_3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface ...
2007-01-24
Magnetic properties of Fe-Co-Mo-Cu-B nanocrystalline ribbons with stressing surfaces
British Library Electronic Table of Contents (United Kingdom)
Magnetic properties of Fe-Co-Mo-Cu-B alloy system with Co up to 26at.% were investigated. After proper thermal treatment, the nanocrystalline grain remains tiny, the density hardly increases, but the room-temperature saturation attains 1.5T mainly due to a high enough Curie temperature. The generally observed slant hysteresis loops point to ribbon surfaces, which stress the ribbon interior and induce a specific magnetoelastic contribution to hard-ribbon-axis magnetic anisotropy even after vacuum annealing. The effect does not come from cobalt but rather from the lack of silicon. Partial removal of the surfaces resulted in a decrease of the loop tilt.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Fe-Cr-Mn stainless steel is one of the candidate materials for the 1`st wall materials and structural applications of fusion reactor as regards reduced radioactivation properties than Fe-Cr-Ni austenitic stainless steels. This report deals with the effects of annealing and aging heat treatment on the microstructure, mechanical properties and corrosion resistance of Fe-Cr-Mn alloys varying Mn and W contents, which were made using vacuum high frequency induction furnace. Increasing Mn contents, austenite phase was increased, and maximum .epsilon. martensite phase was formed at about 21% Mn. W-addition made small amount of ferrite phase in the matrix, and the ferrite contents were increased with raising annealing temperature. Increased Mn contents reduced tensile stress and yield stress but increased the elongation. W-addition raised the high temperature tensile properties. The variation of Mn contents had ...
1996-07-01
Memory effect in air in the presence of vacuum breakdown mechanism
Investigation of memory effects in air at 0.7 mbar pressure in the presence of vacuum electrical breakdown mechanism has been performed in this paper. The memory effect has been followed using the time delay method.
2008-07-01
The effect of annealing parameter on corrosion resistance of Zircaloy-2
International Nuclear Information System (INIS)
The effects of equal #SIGMA#Ai for different combinations of the annealing temperature and annealing time on corrosion resistance and evolution of precipitates of Zircaloy-2 were investigated. Nodular corrosion resistance in the out-of-pile corrosion test was degraded with increasing #SIGMA#Ai only when it was increased by extending the annealing time at 894 K but did not depend on #SIGMA#Ai which was increased by raising the annealing temperature for a constant annealing time of 2.5 h. Extensive observation and micro-analysis of precipitates by analytical electron microscope (AEM) suggested the cause of degradation of nodular corrosion resistance to be the remarkable increase in volume fraction of Si-containing precipitates such as Zr_3Si and Zr_2Si, which were observed more frequently in large #SIGMA#Ai only when it was increased by extending the ...
Interaction of energetic beams with metals and semiconductors - a computational approach
International Nuclear Information System (INIS)
In a vacuum insulator, the narrow electron beam emitted from the cathode impinges on the anode and raises its temperature and also may produce high thermal stress. This high thermal stress, in conjuction with the surface electrostatic pressure may rupture the surface and detach particles from it. In this thesis, the interaction of high energy electron and laser beams with metals and semiconductors is investigated. The differential equations governing the physical processes involved in the interaction are solved by the finite element method. Effects of beam penetration into the material, variable beam reflectance at the surface, finite beam size and dependence of material properties on temperature are accounted for. The two-phase moving boundary problem, also known as the Stefan problem, is solved by an enthalpy formulation of the heat equation. Material deformation by thermal stresses caused by high temperature gradients and electrostatic ...
1984-01-01
Investigations of microstructure of thin TbFeCo films by high-resolution electron microscopy
International Nuclear Information System (INIS)
High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.
Electrical and structural properties of ion-implanted and post-annealed silicide films
Energy Technology Data Exchange (ETDEWEB)
The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to ...
1982-05-01
Electrical and structural properties of ion-implanted and post-annealed silicide films
International Nuclear Information System (INIS)
The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature ...
High temperature properties of ceramics in the SiAlON system
International Nuclear Information System (INIS)
A series of SiAlON materials with a cordierite-based matrix were annealed for different lengths of time to cause crystallization of the glass phase. Their fracture toughness, hardness, and elastic modulus were measured from room temperature up to 1100"0C. The fracture toughness generally decreased with temperature. Short time annealing raised toughness at lower temperatures, while further annealing lowered it back to the value for as-hot pressed materials. At higher test temperatures annealing had no effect on toughness. This annealing behavior is significantly different from that previously reported in the system SaAlON-YAG. Hardness decreased monotonically with temperature for all samples. Both hardness and the elastic modulus were not affected by the annealing treatment. At elevated temperatures appreciable scatter of modulus results ...
Radiation-annealing hardening of vanadium
International Nuclear Information System (INIS)
A study is made of the mechanical properties of vanadium irradiated with fast neutrons up to dose 8.6.10"-"4 dpa, as a function of the temperature of post-radiation annealing. The radiation-annealing hardening (RAH) effect is observed at 300"oC, in agreement with previous studies. It is established for the first time that RAH is accompanied by fall in ductility. A phenomenological model is described which explains the dependence of RAH on radiation dose and temperature, as well as on the content of chemically active alloying impurities. (author).
Effect of rapid thermal annealing on radiation hardening of MOS devices
International Nuclear Information System (INIS)
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.
1995-07-17
British Library Electronic Table of Contents (United Kingdom)
Annealing of magnetostrictive Metglas foils, subsequently incorporated into laminated Metglas/Pb(Zr, Ti)O3 magnetoelectric (ME) composites, is shown to result in improved magnetic properties, as well as ME coefficients. Annealing of the foils at 350 ?C resulted in partial crystallization, without oxidation or magnetic cluster formation that would reduce the magnetization. Laminate composites made with these annealed Metglas foils had improved ME coefficients.
2011-01-01
The Reduction of TED in Ion Implanted Silicon
International Nuclear Information System (INIS)
The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal ...
2008-11-03
On Boron Diffusion in MgF{sub 2}
The MgF{sub 2} monocrystals were irradiated at room temperature with 390 keV B{sup +} ions up to the fluence of 10{sup 16} cm{sup -2}. The irradiated samples were (isochronally and isothermally) annealed in high vacuum at the temperatures 200 deg. C, 300 deg. C, 400 deg. C, 500 deg. C, 600 deg. C and 700 deg. C for the times ranging from 2-100 hours. After each annealing step, the boron depth distribution was determined using the neutron depth profiling technique. As implanted, the depth distributions of boron exhibited standard Gaussian-like forms, but the evaluated profile parameters, R{sub P} = 960 nm and {delta}R{sub P} = 140 nm, were higher than those calculated using the SRIM code (R{sub P} = 870 nm and {delta}R{sub P} = 115 nm). Annealing at temperatures up to 400 deg. C did not change the depth profiles. Annealing at 600 deg. C, however, led to a one-way gradual transfer of ...
2009-03-10
Evolution of a vacuum shell in the Friedmann-Schwarzschild world
International Nuclear Information System (INIS)
The method of an effective potential is used to investigate the possible types of evolution of vacuum shells in the Friedmann-Schwarzschild world. Such shells are assumed to emerge during phase transitions in the early Universe. The possible global geometries are constructed for the Friedmann-Schwarzschild worlds. Approximate solutions to the equation of motion of a vacuum shell have been found. The conditions under which the end result of the evolution of the vacuum shells under consideration is the formation of black holes and wormholes with baby universes inside have been found. The interior of this world can be a closed, flat, or open Friedmann universe.
2008-08-01
Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing
Energy Technology Data Exchange (ETDEWEB)
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
2006-05-15
Damage process and luminescent characteristics in silica glasses under ion irradiation
International Nuclear Information System (INIS)
Full text of publication follows: Understanding the dynamic irradiation effects on silica glasses is important for developing the diagnostic systems used in fusion and fission environments. While fundamental defects having an un-pared electron such as the E' center have been extensively studied, the neutral oxygen deficiency defects have been insufficiently clarified for lack of the detection methods. The ion induced luminescence is one of the probes that can be used to detect non-paramagnetic defects, and to observe creation and annihilation behavior dynamically. In the present study, we examined the characteristics of the ion induced luminescence such as energy, fluence flux and temperature dependence of the luminescence efficiency to analyze damage process quantitatively. Samples of SiO2 glasses were commercially available fused and synthesized silica glasses, produced by Toshiba Ceramics, Co. Ltd.. A thin films of SiO2 deposited on a Si wafer was used to ...
2007-12-10
Fusion zone microstructure and porosity in electron beam welds of an #alpha# + #beta# titanium alloy
International Nuclear Information System (INIS)
The effect of electron beam welding parameters on fusion zone (FZ) microstructure and porosity in a Ti-6.8 Al-3.42 Mo-1.9 Zr-0.21 Si alloy (Russian designation VT 9) has been investigated. It has been observed that the FZ grain width increased continuously with increase in heat input when the base metal was in the #beta# heat-treated condition, while in the #alpha# + #beta# heat-treated base metal welds, the FZ grain width increased only after a threshold energy input. The difference is attributed to both the weld thermal cycle and the pinning effect of equiaxed primary alpha on grain growth in the heat-affected zone (HAZ) of #alpha# + #beta# heat-treated base metal. Postweld heat treatment (PWHT) in the subtransus and supertransus regions did not alter the columnar grain morphology in the FZ, possibly due to the lack of enough driving force for the formation of new grains by the breaking up of the columnar grains and grain boundary movement ...
1999-03-01
Kapitza conductance of the (100) surface of copper
International Nuclear Information System (INIS)
Measurements of the Kapitza conductance to liquid helium II across the (100) surface of single crystals of copper are presented. The temperature range of these measurements was 1.6-- 2.1 K. The sample surfaces were subjected to several different treatments. Some surfaces were cleaned by low-energy argon ion bombardment, annealed in an ultrahigh-vacuum system, and preserved under vacuum until purified liquid helium was admitted. Other surfaces were intentionally damaged by machining and/or exposure to the atmosphere. The conductance after these latter treatments was found to be about a factor of three higher than that of the more ideally cleaned and annealed surfaces, and a significant difference in the temperature dependence of the conductance was also observed. Conductances were reproducible for similarly treated surfaces and correlated with surface damage determined by x-ray diffraction. The ...
The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
International Nuclear Information System (INIS)
We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
2005-11-07
British Library Electronic Table of Contents (United Kingdom)
For an ultrafine grain ferrite/cementite (UGF/C) steel, the Charpy impact energy was measured at temperatures from 373K to 4.2K, and tensile tests were carried out at temperatures between 323K and 77K. For the steel with annealed microstructure, the ductile-to-brittle transition appearance temperature (DBTT) was lower than the Charpy transition temperature (CTT). With increasing annealing time at 873K, the DBTT and the CTT increased, and the DBTT approached the CTT. The DBTT decreased with decreasing effective grain size. The effective grain size correlated to the grain size of the larger grain size peak in the distribution of grains with {100} planes. The annealed microstructures had higher yield strength for equivalent toughness (including upper shelf energy, DBTT and CTT) compared to th...
2011-01-01
International Nuclear Information System (INIS)
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...
International Nuclear Information System (INIS)
Vacuum glazing consists of an evacuated space between two sheets of glass. Vacuum glazing has a large effect on energy savings in houses and buildings. Vacuum glazing can achieve higher insulating performance than conventional insulated glazing. Nippon Sheet Glass has successfully developed conventional vacuum glazing. In this study we investigated an advanced form of vacuum glazing. Its thermal insulation ability is equivalent to 100 mm thick glass wool thermal insulation. This vacuum glazing contained a SnO_2:F low emissivity surface. The influence of the residual gas in a vacuum space on heat flow is important to performance. For long-term thermal stability, it is very important to maintain vacuum stability. To understand this better, we studied the behavior of outgassing from the inside glass ...
2005-06-15
International Nuclear Information System (INIS)
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the ...
2005-02-15
International Nuclear Information System (INIS)
Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation and further annealing on composition, ...
International Nuclear Information System (INIS)
Post-irradiation annealing was used to help identify the role of radiation-induced segregation (RIS) in irradiation-assisted stress corrosion cracking (IASCC) by preferentially removing dislocation loop damage from proton-irradiated austenitic stainless steels while leaving the RIS of major and minor alloying elements largely unchanged. The goal of this study is to better understand the underlying mechanisms of IASCC. Simulations of post-irradiation annealing of RIS and dislocation loop microstructure predicted that dislocation loops would be removed preferentially over RIS due to both thermodynamic and kinetic considerations. To verify the simulation predictions, a series of post-irradiation annealing experiments were performed. Both a high purity 304L (HP-304L) and a commercial purity 304 (CP-304) stainless steel alloy were irradiated with 3.2 MeV protons at 360 deg. C to doses of 1.0 and 2.5 dpa. Following irradiation, ...
2002-04-01
Mercury vacuum cleaner operational test and evaluation
Energy Technology Data Exchange (ETDEWEB)
The Dental Investigation Service, USAFSAM, Brooks AFB, has outlined the need for a vacuum unit to be used in the Air Force dental clinics. The unit must be capable of effectively picking up mercury and at the same time not redistribute mercury vapors throughout the dental clinic during normal operations or mercury-spill situations. The Dental Investigation Service selected the MRS-3, Minuteman Mercury Recovery System, product of American Cleaning Equipment Corporation as the mercury vacuum to be used for T E. The USAF OEHL/ECH was requested by the Dental Investigation Service to perform the T E on the MRS-3 for possible health hazards due to exposures of mercury vapors.
1981-03-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group ...
1985-08-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group ...
Energy Technology Data Exchange (ETDEWEB)
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...
1993-01-01
Reduced boron diffusion under interstitial injection in fluorine implanted silicon
International Nuclear Information System (INIS)
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the ...
2007-12-01
Thermal stability of nanocomposite CrC/a-C:H thin films
International Nuclear Information System (INIS)
The thermal stability of low-friction Me-C/a-C:H coatings is important for their potential applications in the tool and automotive industry. Recently we showed that CrC _x/a-C:H coatings prepared by unbalanced magnetron sputtering of a Cr target in Ar + CH_4 glow discharges exhibit a nanocomposite structure where metastable fcc CrC nanocrystals are encapsulated by an a-C:H phase. Here, we present the structural evolution of these nanocomposite CrC/a-C:H coatings during annealing. High-temperature X-ray diffraction in vacuum and differential scanning calorimetry (DSC) combined with thermo-gravimetric analysis in Ar atmosphere indicate decomposition of the formed metastable fcc CrC phase and subsequent formation of Cr_3C_2 and Cr_7C_3 and structural transformation of the a-C:H matrix phase towards higher sp"2 bonding contents at temperatures above 450 deg. C. Combined DSC and mass spectrometer analysis as well as elemental profiling after ...
2007-05-07
Magnetic properties of FePt nanodots formed by a self-assembled nanodot deposition method
International Nuclear Information System (INIS)
Fe_5_0Pt_5_0 nanodots dispersed in a SiO_2 film (Fe_5_0Pt_5_0 nanodot film) were formed by a self-assembled nanodot deposition (SAND) method in which Fe_5_0Pt_5_0 and SiO_2 are cosputtered in a high vacuum rf magnetron sputtering equipment. Fe_5_0Pt_5_0 pellets are laid on a SiO_2 target in a sputtering chamber to form the Fe_5_0Pt_5_0 nanodot film in the SAND method. The size and density of Fe_5_0Pt_5_0 nanodot were controlled by changing the ratio of the total area of Fe_5_0Pt_5_0 pellets to that of SiO_2 target. The Fe_5_0Pt_5_0 nanodot size decreases and its density increases when the ratio decreases. As-deposited Fe_5_0Pt_5_0 nanodots self-assembled to a face-centered-cubic phase of single-crystal structure. The Fe_5_0Pt_5_0 nanodot films were annealed to evaluate the nanodot size controllability, the magnetic anisotropy, and the thermal stability. Fully ordered L1_0 face-centered-tetragonal Fe_5_0Pt_5_0 nanodots with high ...
2006-08-07
Energy Technology Data Exchange (ETDEWEB)
Microstructural evolution due to thermal effects was studied in micro solder joints (55 {+-} 5 {micro}m). The composition of the Sn/Pb solder studied was found to be hypereutectic with a tin content of 65--70 wt%.This was determined by Energy Dispersive X-ray analysis and confirmed with quantitative stereology. The quantitative stereological value of the surface-to-volume ratio was used to characterize and compare the coarsening during thermal cycling from 0--160 C to the coarsening during annealing at 160 C. The initial coarsening of the annealed samples was more rapid than the cycled samples, but tapered off as time to the one-half as expected. Because the substrates to which the solder was bonded have different thermal expansion coefficients, the cycled samples experienced a mechanical strain with thermal cycling. The low-strain cycled samples had a 2.8% strain imposed on the solder and failed by 1,000 cycles, despite ...
1998-12-01
Experiments on the formation of the A 15-compounds Nb-Sn and Nb-Ge by ion implantation
International Nuclear Information System (INIS)
Nb_3Sn films (Tsub(c)=17.8 K) were obtained by implantation of Sn"+ ions into Nb films (1500 A thick) after subsequent annealing. The annealing temperature required for the formation of the A15 phase in the implanted films was about 100 K higher than for Nb-Sn sandwich films evaporated at 300 K. The influence of the Sn concentration and of the annealing temperature was studied by measuring the sample resistance. The Nb-Sn compounds formed during the annealing process were analysed by measurements of the Moessbauer-effect of "1"1"9Sn. The implantation method was also used to produce Nb-Ge films with a ratio Ge/Nb approximately 1/3. The Ge-concentration and the temperature of the Nb-target (300-1070 K) were varied. These variations as well as subsequent annealing at 600-850"0C did not lead to superconducting transition temperatures above 8 K. (Auth.).
Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
1985-03-01
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
British Library Electronic Table of Contents (United Kingdom)
Effective work function (m,eff) values of Ru gate electrode on SiO2 and HfO2 MOS capacitors were carefully examined and discussed from the viewpoint of an effect of oxygen incorporation in Ru gate electrode on m,eff. Annealing at 400degreeC in the reduction (3%H2) and the oxidation (1%O2) ambient resulted in similar changes in the m,eff of Ru/HfO2/SiO2 and Ru/SiO2 MOS capacitors. Furthermore, the Ru gate MOS capacitor after annealing in the oxidation condition have shown almost the same m,eff value to that of RuO2 gate MOS capacitors. The oxygen concentration in the Ru/HfO2 interface after annealing in oxidizing atmosphere is approximately one order of magnitude higher than that after annealing in reducing atmosphere as confirmed by secondary ion mass spectroscopy analysis. Furthermore, th...
2006-01-01
Vacuum ultraviolet radiometry of xenon positive column discharges
Energy Technology Data Exchange (ETDEWEB)
In order to judge the potential fluorescent lamp applications of various low-pressure positive column discharges it is necessary to measure the absolute power emitted in the ultraviolet region of the spectrum. For rare-gas discharges the principle emission occurs in the vacuum ultraviolet so that it is difficult to measure the radiant emittance (power per unit area) of the resonance radiation by standard methods. Two independent techniques are discussed for measuring the radiant emittance of positive column discharges in the vacuum ultraviolet. These techniques are used to study xenon positive column discharges at the resonance wavelength of 147 nm. The first method relies on the measurement of the resonance level density by absorption techniques. The effective decay rate of the resonance level is then determined by the simulation of resonance radiation transport. These two quantities are combined to yield the radiant ...
1995-10-01
Jacobi stability of the vacuum in the static spherically symmetric brane world models
International Nuclear Information System (INIS)
We analyze the stability of the structure equations of the vacuum in the brane world models, by using both the linear (Lyapunov) stability analysis, and the Jacobi stability analysis, the Kosambi-Cartan-Chern theory. In the brane world models the four-dimensional effective Einstein equations acquire extra terms, called dark radiation and dark pressure, respectively, which arise from the embedding of the three-brane in the bulk. Generally, the spherically symmetric vacuum solutions of the brane gravitational field equations have properties quite distinct as compared to the standard black hole solutions of general relativity. We close the structure equations by assuming a simple linear equation of state for the dark pressure. In this case the vacuum is Jacobi stable only for a small range of values of the proportionality constant relating the dark pressure and the dark radiation. The unstable trajectories ...
2008-05-15
Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides
International Nuclear Information System (INIS)
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
Effect of protective coatings on the high-temperature fatigue of heat-resistant alloys
Energy Technology Data Exchange (ETDEWEB)
The fatigue properties of EP539LM alloy with an Al-Nb-Si fused slurry coating and a Co-Cr-Al-Y electron-beam coating are investigated experimentally in vacuum and in air at 900 C. It is found that the protective coatings reduce the fatigue life of the specimens both in vacuum and in air, with the electron-beam coating affecting the fatigue life of the alloy to a lesser degree than the fused slurry coating. The negative effect of the coatings on the fatigue life of the alloy is attributed largely to the properties of the coating material. 7 references.
1986-08-01
International Nuclear Information System (INIS)
Low energy (<100 eV) Ar"+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)/sub 1-x/Ge/sub x/ alloys. The films were approx.1.5 #mu#m thick and the average grain size in the metastable state was approx.300 A.
6180-01-01
British Library Electronic Table of Contents (United Kingdom)
We report the fabrication and characterization of glucose-tolerant Raney-platinum cathodes for oxygen reduction in potentially implantable glucose fuel. Fabricated by extraction of aluminum from 1mm thin platinum-aluminum bi-layers annealed at 300^oC, the novel cathodes show excellent resistance against hydrolytic and oxidative attack. This renders them superior over previous cathodes fabricated from hydrogel-bound catalyst particles. Annealing times of 60, 120, and 240min result in approximately 400-550nm thin porous films (roughness factors ~100-150), which contain platinum and aluminum in a ratio of ~9:1. Aluminum release during electrode operation can be expected to have no significant effect on physiological normal levels, which promises good biocompatibility. Annealing time has a dis...
2010-01-01
Deep-level defects and numerical simulation of radiation damage in GaAs solar cells
Energy Technology Data Exchange (ETDEWEB)
A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).
1991-09-01
Energy Technology Data Exchange (ETDEWEB)
SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of {approximately}2E13cm{sup {minus}2}. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.
1995-12-31
International Nuclear Information System (INIS)
SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of #approx#2E13cm"-"2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
Energy Technology Data Exchange (ETDEWEB)
In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are ...
2002-01-01
Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon
International Nuclear Information System (INIS)
In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative ...
2002-01-01
International Nuclear Information System (INIS)
On all steam turbines operating with condensation the air leakage penetrating from the part of the plant which is under vacuum must be eliminated, in order to maintain the vacuum created by physical conditions. In order to attain effective air bleed-off, the water-steam-air mixture is conveyed via the super-cooling bundles in the condenser. In this way the steam partial pressure decreases and the air partial pressure increases at a constant condenser pressure. In this procedure the mixture is supercooled by about 4"0C compared with the saturate steam temperature appertaining to the condenser pressure. The values of volume of air leakage are the result of a year's experience on existing plant. (orig.).
True and measured outgassing rates of a vacuum chamber with a reversibly adsorbed phase
Energy Technology Data Exchange (ETDEWEB)
A pump down model for a vacuum chamber with a reversibly adsorbed phase is presented. The outgassing equation which predicts the variation of coverage at the wall surface of a vacuum chamber with time is derived. Then the measured and the true outgassing rates are defined. The theoretical measured outgassing rate shows only a very weak dependence for pumping speed. This prediction is opposite to the experimental result that the measured outgassing rate depends significantly on pumping speed. It is discussed that the experimental measured outgassing rate must be described as the product of the effective pumping speed and the measured pressure in the pumped chamber, in which the measured pressure is equivalent to the equilibrium pressure of the wall surface described by the equilibrium adsorption isotherm as a function of the shifted surface coverage {theta}-{delta}{theta} by a small coverage {delta}{theta} from the coverage ...
2000-03-01
Energy Technology Data Exchange (ETDEWEB)
As a part of the WE-NET project, the tanker for liquid hydrogen transport was studied. In fiscal 1996, some experiments and numerical analyses were proposed which are necessary to solve technological issues extracted in fiscal 1995 for heat insulation structure. The issue was roughly classified into vacuum and non-vacuum insulation, and their basic functions and required performance were arranged. Boil-off rate of 0.2-0.4%/d was targeted. The insulation system which applies polyurethane form (PUF) to tank surfaces and injects atmospheric N2 gas into the surrounding hold space, could achieve the targeted insulation performance by PUF of 1m in thickness. The system of vacuum panel insulation and atmospheric N2 gas injection into a hold space required the panel of 500mm in thickness because of the large effect of metallic outer panel material. The system of vacuum hold and PUF panels ...
1997-03-01
Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers
International Nuclear Information System (INIS)
We have developed a chemical process for incorporating copper into indium gallium selenide layers with the goal of creating a precursor structure for the formation of copper indium gallium diselenide (CIGS) photovoltaic absorbers. Stylus profilometry, EDX, Raman spectroscopy, XRD and SIMS measurements show that when indium gallium selenide layers are immersed in a hot copper chloride solution, copper is incorporated as copper selenide with no increase in the thickness of the layers. Further measurements show that annealing this precursor structure in the presence of selenium results in the formation of CIGS and that the supply of selenium during the annealing process has a strong effect on the morphology and preferred orientation of these layers. When the supply of Se during annealing begins only once the substrate temperature reaches ? 400 deg. C , the resulting CIGS layers are smoother and have more ...
2009-02-02
Energy Technology Data Exchange (ETDEWEB)
We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.
2006-05-10
International Nuclear Information System (INIS)
We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, the amorphous regions formed by cascades eventually overlap, and a continuous amorphous layer is formed. In that case, most of the excess interstitials generated by the implantation are swept to the surface as the amorphous layer regrows, and do not diffuse in the crystalline region. This process reduces the amount of transient enhanced diffusion (TED) during annealing. This model also reproduces the dynamic annealing during high temperature implants. In this case, the local amorphous regions regrow as the implant proceeds, without the formation of a continuous amorphous layer. For sufficiently high ...
2001-06-01
Anomalous phosphorus diffusion in Si during postimplantation annealing
Energy Technology Data Exchange (ETDEWEB)
The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained ...
2001-06-11
British Library Electronic Table of Contents (United Kingdom)
In this paper, we prepared by the sol-gel method alkaline titania catalysts, doped by gelling titanium alkoxide with aqueous solutions containing potassium, rubidium or cesium chlorides. XRD patterns showed that samples annealed at 400 and 600degreeC contained a single crystalline phase, anastase. Specific surface areas were higher in samples annealed at 400degreeC (>100m2/g) than in those annealed at 600degreeC (25m2/g). The weight density of basic sites determined by CO2-TPD drastically diminished in samples treated at 600degreeC. Catalysts were tested for the self-condensation of acetone at 300degreeC; main reaction products were isomesityl oxide, mesityl oxide and mesitylene. Samples annealed at 600degreeC showed lower acetone conversion rate and low formation of mesitylene than that o...
2006-01-01
We study from a critical perspective several quantum-electrodynamic phenomena commonly related to vacuum electromagnetic (EM) fluctuations in complex media. We compute the resonance-shift, the spontaneous emission rate, the local density of states and the van-der-Waals-Casimir pressure in a dielectric medium using a microscopic diagrammatic approach. We find, in agreement with some recent works, that these effects cannot be attributed to variations on the energy of the EM vacuum but to variations of the dielectric self-energy. This energy is the result of the interaction of the bare polarizability of the dielectric constituents with the EM fluctuations of an actually polarized vacuum. We have found an exact expression for the spectrum of these fluctuations in a statistically homogeneous dielectric. Those fluctuations turn out to be different to the ones of normal radiative modes. It is the latter that ...
2009-01-01
Impregnation mode in wood plastic composite
Bulk monomer MMA was impregnated into simul, a fuel wood of Bangladesh, under vacuum and under normal temperature and pressure conditions in order to compare the mode of impregnation and its effect on various characteristic parameters of wood plastic composites. Methanol (MeOH) was used as the swelling solvent with methylmethacrylate (MMA) at MMA: MeOH = 70:30, v/v. Impregnation of the bulk monomer was very high under vacuum compared to that at normal condition; but the difference of grafting of MMA to the wood cellulose under these two impregnating conditions was much lower as compared to that of the uptakes of impregnating solution MMA + MeOH under these two modes of impregnation. Incorporation of additives to MMA + MeOH has substantially enhanced grafting, tensile strength, bending strength and compression strength of the composite to such an extent that there is virtually very little difference between ...
1996-12-01
Dust resuspension and transport modeling for loss of vacuum accidents
Energy Technology Data Exchange (ETDEWEB)
Plasma surface interactions in tokamaks are known to create significant quantities of dust, which settles onto surfaces and accumulates in the vacuum vessel. In ITER, a loss of vacuum accident may result in the release of dust which will be radioactive and/or toxic, and provides increased surface area for chemical reactions or dust explosion. A new method of analysis has been developed for modeling dust resuspension and transport in loss of vacuum accidents. The aerosol dynamic equation is solved via the user defined scalar (UDS) capability in the commercial CFD code Fluent. Fluent solves up to 50 generic transport equations for user defined scalars, and allows customization of terms in these equations through user defined functions (UDF). This allows calculation of diffusion coefficients based on local flow properties, inclusion of body forces such as gravity and thermophoresis in the convection term, and user defined ...
2007-07-01
Dust resuspension and transport modeling for loss of vacuum accidents
International Nuclear Information System (INIS)
Plasma surface interactions in tokamaks are known to create significant quantities of dust, which settles onto surfaces and accumulates in the vacuum vessel. In ITER, a loss of vacuum accident may result in the release of dust which will be radioactive and/or toxic, and provides increased surface area for chemical reactions or dust explosion. A new method of analysis has been developed for modeling dust resuspension and transport in loss of vacuum accidents. The aerosol dynamic equation is solved via the user defined scalar (UDS) capability in the commercial CFD code Fluent. Fluent solves up to 50 generic transport equations for user defined scalars, and allows customization of terms in these equations through user defined functions (UDF). This allows calculation of diffusion coefficients based on local flow properties, inclusion of body forces such as gravity and thermophoresis in the convection term, and user defined ...
2007-10-05
Energy Technology Data Exchange (ETDEWEB)
Additional results using a calorimetric technique for measuring the total hemispherical emittance of pipe surfaces from 400 to 600 K are described. Two different Pyrex pipe enclosures were used, one of 15 cm i.d. and the other of 30 cm i.d. An error analysis showed that the larger diameter Pyrex pipe should have a smaller error, but the difference was negligible for the 4.4-cm test pipe diameter used. Measurements on a short length of a previously-measured pipe agreed with earlier measurements, but only over the temperature range of the measurements. While the technique normally uses a vacuum to minimize nonradiative heat transfer, measurements were done succesfully with an argon atmosphere in a closed system. A nickel-plated pipe, measured first in a vacuum and then in an argon atmosphere, allowed calculation of an effective convective heat-transfer coefficient for use with test pipes of unknown emittances. Measurements ...
1981-10-01
Adiabatic interpretation of particle creation in a de Sitter universe
Energy Technology Data Exchange (ETDEWEB)
The choice of vacuum state for a quantum scalar field propagating in a de Sitter spacetime (massive and arbitrarily coupled to the gravitational field) is discussed. The problem of finite-time initial conditions for the mode functions is analyzed, as well as how these determine the vacuum state of the quantum system. The principle guiding the choice of vacuum state is the following: one wants the vacuum contribution to the energy-momentum tensor to contain all the ultraviolet divergent terms, so that the particle creation terms are finite, and covariantly conserved. There is a suitable set of modes (instantaneous adiabatic basis) in which this splitting of the expectation value of the energy-momentum tensor can be carried out. Numerical results are presented for different finite-time initial conditions (m = 0.6, {zeta} = 1/6). The nature of the particle creation effect is described ...
1998-06-10
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
International Nuclear Information System (INIS)
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.
1984-11-26
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
Energy Technology Data Exchange (ETDEWEB)
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.
1986-01-01
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
Energy Technology Data Exchange (ETDEWEB)
We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.
1984-01-01
Transient enhanced diffusion and gettering of dopants in ion implanted silicon
International Nuclear Information System (INIS)
The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.
Energy Technology Data Exchange (ETDEWEB)
The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
1995-10-09
International Nuclear Information System (INIS)
The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B"+ implantation at 35 keV for a dose of 5x10"1"4 cm"-"2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 degree C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 degree C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. copyright 1995 American Institute of Physics.
Transient enhanced diffusion of dopants in preamorphized Si layers
Energy Technology Data Exchange (ETDEWEB)
Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops ...
1997-11-01
Transient enhanced diffusion of dopants in preamorphized Si layers
International Nuclear Information System (INIS)
Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops ...
1996-12-02
Thermal annealing effect on optical properties of electrodeposited ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible ...
2008-10-07
Lattice calculation of nonleptonic charm decays
Energy Technology Data Exchange (ETDEWEB)
The decays of charmed mesons into two body nonleptonic final states are investigated. Weak interaction amplitudes of interest in these decays are extracted from lattice four-point correlation functions using a effective weak Hamiltonian including effects to order G{sub f} in the weak interactions yet containing effects to all orders in the strong interactions. The lattice calculation allows a quantitative examination of non-spectator processes in charm decays helping to elucidate the role of effects such as color coherence, final state interactions and the importance of the so called weak annihilation process. For D {yields} K{pi}, we find that the non-spectator weak annihilation diagram is not small, and we interpret this as evidence for large final state interactions. Moreover, there is indications of a resonance in the isospin {1/2} channel to which the weak annihilation process contributes ...
1991-11-01
Study of silicon damage caused by ultra-low energy boron implantation
International Nuclear Information System (INIS)
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission ...
Structural relaxation and crystallization in the Fe-Cr-Si-B and Fe-Cu-Cr-Si-B amorphous alloys
International Nuclear Information System (INIS)
Structural relaxation, crystallization and optimisation processes in soft magnetic amorphous alloys based on iron are examined by applying different experimental techniques: X-ray diffraction analysis, high-resolution electron microscopy, measurements of magnetic and electric properties (permeability, after-effect resistivity). The presented results are discussed in terms of annealing out of microvoids, formation of nanocrystalline phase and changes of effective magnetostriction constant. (author)
2001-09-23
Boron uphill diffusion during ultrashallow junction formation
International Nuclear Information System (INIS)
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
2003-05-26
Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon
International Nuclear Information System (INIS)
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
1989-04-25
Spontaneous excitation of an accelerated atom in a spacetime with a reflecting plane boundary
We study a two-level atom in interaction with a real massless scalar quantum field in a spacetime with a reflecting boundary. The presence of the boundary modifies the quantum fluctuations of the scalar field, which in turn modifies the radiative properties of atoms. We calculate the rate of change of the mean atomic energy of the atom for both inertial motion and uniform acceleration. It is found that the modifications induced by the presence of a boundary make the spontaneous radiation rate of an excited inertial atom oscillate near the boundary and this oscillatory behavior may offer a possible opportunity for experimental tests for geometrical (boundary) effects in flat spacetime. While for accelerated atoms, the transitions from ground states to excited states are found to be possible even in a vacuum due to changes in the vacuum fluctuations induced by both the presence of the boundary and the acceleration of atoms, ...
2005-09-15
This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
2007-08-01
International Nuclear Information System (INIS)
This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
2007-08-01
Effects of quantum vacuum fluctuations of the electric field on DNA condensation
British Library Electronic Table of Contents (United Kingdom)
By assuming that not only counter-ions but DNA molecules as well are thermally distributed according to a Boltzmann law, we propose a modified Poisson-Boltzmann equation, at the classical level, as a starting point to compute the effects of quantum fluctuations of the electric field on the interaction among DNA-cation complexes. The latter are modeled here as infinite one-dimensional wires (?-functions). Our goal is to single out such quantum-vacuum-driven interaction from the counterion-induced and water-related interactions. We obtain a universal, frustration-free Casimir-like (codimension 2) interaction that extensive numerical analysis show to be a good candidate to explain the formation and stability of DNA aggregates. Such Casimir energy is computed for a variety of configurations of...
2011-01-01
Using the infrared spectroscopy method, we have studied the effect of thermal dehydration (under vacuum and in air) and treatment with water vapor on the acid centers of very high silicon zeolites of the ZSM type. We have shown that dehydration under vacuum and in air completely and irreversibly removes the OH groups at 1120/sup 0/K, while treatment with water vapor removes these groups at 770/sup 0/K. The Lewis acid centers of dehydrated zeolites (represented by two types of centers) are more heat-stable than the Bronsted acid centers, but the vapor treatment at 1020/sup 0/K leads to the disappearance of the Lewis acid centers. In this work, we discuss the reasons for destruction of the acid centers of the zeolites under different treatment conditions.
1986-08-01
Structure of human insulin monomer in water/acetonitrile solution
Energy Technology Data Exchange (ETDEWEB)
Here we present evidence that in water/acetonitrile solvent detailed structural and dynamic information can be obtained for important proteins that are naturally present as oligomers under native conditions. An NMR-derived human insulin monomer structure in H{sub 2}O/CD{sub 3}CN, 65/35 vol%, pH 3.6 is presented and compared with the available X-ray structure of a monomer that forms part of a hexamer (Acta Crystallogr. 2003 Sec. D59, 474) and with NMR structures in water and organic cosolvent. Detailed analysis using PFGSE NMR, temperature-dependent NMR, dilution experiments and CSI proves that the structure is monomeric in the concentration and temperature ranges 0.1-3 mM and 10-30 deg. C, respectively. The presence of long-range interstrand NOEs, as found in the crystal structure of the monomer, provides the evidence for conservation of the tertiary structure. Starting from structures calculated by the program CYANA, two different molecular dynamics simulated ...
2008-01-15
Polysilicon thin film transistors fabricated on low temperature plastic substrates
Energy Technology Data Exchange (ETDEWEB)
We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}
1999-07-01
British Library Electronic Table of Contents (United Kingdom)
A tertiary structure of recombinant A22^G-B31^K-B32^R-human insulin monomer (insulin GKR) has been characterized by ^1H, ^1^3C NMR at natural isotopic abundance using NOESY, TOCSY, ^1H/^1^3C-GHSQC, and ^1H/^1^3C-GHSQC-TOCSY spectra. Translational diffusion studies indicate the monomer structure in water/acetonitrile (65/35vol.%). CSI analysis confirms existence of secondary structure motifs present in human insulin standard (HIS). Both techniques allow to establish that in this solvent recombinant insulin GKR exists as a monomer. Starting from structures calculated by the program CYANA, two different refinement protocols used molecular dynamics simulated annealing with the program AMBER; in vacuum (AMBER_VC), and including a generalized Born solvent model (AMBER_GB). From these calculation...
2011-01-01
Epitaxial stabilization of MnO(111) overlayers on a Pd(100) surface
International Nuclear Information System (INIS)
The growth of epitaxial MnO(100) and MnO(111) layers on Pd(100) surface has been investigated by spot-profile analysis low-energy electron diffraction, dynamic atomic force microscopy, photoemission and high-resolution electron energy loss spectroscopy, and density functional theory. We have found that despite the large lattice mismatch to the Pd(100) substrate, the MnO(100) layers are kinetically stabilized at low temperatures (?350 deg. C) and at oxygen pressures between 2x10-7 and 5x10-7 mbar. Annealing in ultrahigh vacuum at 650 deg. C or, alternatively, deposition of manganese metal in oxygen pressure -7 mbar causes the transformation of the MnO(100) to a polar MnO(111) surface, which is decorated by triangular pyramids with (100) side facets. It is suggested that the growth of MnO(111) layers is energetically preferred over MnO(100) due to the epitaxial stabilization at the metal-oxide interface.
2007-06-01
Energy Technology Data Exchange (ETDEWEB)
The effect of partial and total replacement of tungsten by molybdenum on the mechanical technical properties were investigated with the cold work steel 60 WCrV 7 (DIN 1.2550). While maintaining the total quantity of tungsten atoms and/or molybdenum atoms in the steel, no differences occur in the type of the separated carbides. After annealing in the range of the pearlite stage with annealing times of up to 150 h, the carbide phases M/sub 23/C/sub 6/ and MC are, besides alpha iron, also present. In short-time annealed states also M/sub 6/C carbides occur. These are formed during austeniting and remain in the steel as residual carbides in austeniting treatment carried out under normal conditions. Compared with tungsten alloyed steel, there is an increased formation of M/sub 6/C carbides in molybdenum alloyed steels during austeniting. By a long-time annealing treatment in the range of ...
1985-12-11
Substitution of neodymium in the Formula Not Shown superconductor
British Library Electronic Table of Contents (United Kingdom)
The Fe-based copper oxide Formula Not Shown exhibits superconductivity around 50K only when it is properly annealed in Formula Not Shown atmosphere and subsequently in Formula Not Shown atmosphere. In contract Formula Not Shown does not exhibit superconductivity even if it is annealed along the same process as Formula Not Shown . We have synthesized the polycrystalline samples of Formula Not Shown solid solution system Formula Not Shown to investigate the Nd substitution effects. DC magnetization measurements have shown that, the samples in a range of Formula Not Shown exhibit superconductivity and Formula Not Shown was reduced with increasing the Nd content. However, we could not observe the superconductivity for Formula Not Shown and 1. Rietveld refinement results revealed that due to th...
2008-01-01
Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices
International Nuclear Information System (INIS)
Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.
Infrared bleaching of the thermoluminescence of four feldspars
International Nuclear Information System (INIS)
This paper studies the effect upon the thermoluminescence (TL) signal of four feldspar samples of exposing them to infrared stimulation, as occurs during infrared-stimulated luminescence (IRSL) measurement. Together with pulse annealing measurements these results are used to show which part of the TL signal is removed by exposure to IR and which part is directly related to the IRSL signal that is observed. When the samples are preheated prior to measurement in order to remove any low-temperature (< 200"oC) TL signals, a linear relationship is observed between the amount of TL that is lost and the IRSL light sum that is produced. The IRSL light sum is consistently four times larger than the amount of TL that is lost. Three possible explanations are proposed for this, but no conclusive evidence could be obtained to support any of them. A close similarity is observed in the pulse annealing results and the loss of TL due to ...
1995-06-01
Hydrogen effect on the deformation and annealing textures in the #beta# titanium alloy VT35
International Nuclear Information System (INIS)
A study is made into textures of deformation and primary recrystallization forming in a #beta#-titanium alloy doped with hydrogen in amounts from 0.04 to 0.55 mass. %, on cold rolling with a 70%-reduction and dehydrogenating annealing at 860 deg C. It is shown that a volume fraction of recrystallization texture components is determined by the nature of corresponding deformation texture, in its turn, depending on hydrogen concentration in the alloy. At low hydrogen contents the main texture components are #left brace#111#right brace# and #left brace#001#right brace#. A hydrogen content increase up to 0.09 - 0.18 mass. % results in formation of dominant components of #left brace#111#right brace# and #left brace#112#right brace#
2003-12-01
Energy Technology Data Exchange (ETDEWEB)
SiO/sub 2//Si samples prepared in 2% and 4% HCl/O/sub 2/ mixtures at 1200/sup 0/C have been annealed in H/sub 2/O/N/sub 2/ ambients at 1200/sup 0/C. The anneals ranged up to 16 hrs in ambients with 4 or 40 ppM H/sub 2/O in N/sub 2/. Rutherford backscattering measurements have been made to determine the amount and location of Cl incorporated in these samples. A linear loss of Cl with annealing time is found for all samples. Changes in the distribution of Cl near the SiO/sub 2//Si interface are found. These changes are interpreted in terms of morphological changes in the third (Cl containing) phase. A significant effect of the H/sub 2/O content of the N/sub 2/ ambient is observed.
1980-01-01
Energy Technology Data Exchange (ETDEWEB)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron ...
1985-01-01
International Nuclear Information System (INIS)
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two ...
Energy Technology Data Exchange (ETDEWEB)
Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.
2004-06-30
International Nuclear Information System (INIS)
Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.
2004-06-30
Effects of post-irradiation annealing in alpha-particle bombarded molybdenum
International Nuclear Information System (INIS)
Structural variations in 39-MeV alpha-particle irradiated (Tsub(irr) = 60 deg C) polycrystalline molybdenum during post-irradiation annealing were studied by X-ray and TEM methods. Despite the high density of irradiation induced defects in the structure of the specimen X-ray measurements showed zero relative lattice parameter change after an irradiation dose of 1.1 x 10"-_2 dpa. However, during the annealing #delta#a/a was changed in the positive range, exhibiting two peaks - at 100 and 300 deg C - whereas the damage structure detected by TEM indicated no changes. Analysis of the results leads to the conclusion that in the range 100 to 250 deg C migration of isolated vacancies and their annihilation at interstitial clusters as well as possible formation of new vacancy clusters occur. The second peak on the #delta#a/a temperature dependence curve is related to the transformation (probably, thermal disintegration) of vacancy clusters formed at ...
Effects of Thermal Annealing Upon the Nanomorphology of Poly(3-hexylselenophene)-PCBM Blends
British Library Electronic Table of Contents (United Kingdom)
Abstract Grazing incidence X-ray diffraction (GI-XRD) is used to characterize the crystallographic dynamics of low molecular weight (LMW) and high molecular weight (HMW) poly(3-hexylselenophene) (P3HS) films and blend films of P3HS with [6-6-]-phenyl-C61-butyric acid methyl ester (PCBM) as a function of -step-by-step- thermal annealing, from room temperature to 250-C. The temperature-dependent GIXRD data show how the melting point of P3HS crystallites is decreased by the presence of PCBM. P3HS crystallite domain sizes dramatically increase upon annealing to the P3HS melting temperature. The formation of well-oriented HMW P3HS crystallites with the (100) plane parallel to the substrate (edge-on orientation), when cooled from melt, are observed. We compare the behaviour of P3HS pure and blen...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
2008-02-15
International Nuclear Information System (INIS)
Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.
2008-02-01
Energy Technology Data Exchange (ETDEWEB)
(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of ...
1997-11-01
International Nuclear Information System (INIS)
(001) CZ silicon wafers were implanted with arsenic (As"+) at energies of 10--50 keV to doses of 2 x 10"1"4 to 5 x 10"1"5/cm"2. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As ...
1996-12-02
Energy Technology Data Exchange (ETDEWEB)
The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and IrO{sub 2} are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in O{sub 2} ambient. The leakage current mechanisms of PLZT capacitors with Pt and IrO{sub 2} top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model. (author). 15 refs., 6 figs.
2001-02-01
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its ...
1989-03-01
Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon
International Nuclear Information System (INIS)
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
Summary of ACSL Simulations of the MSRE Auxiliary Charcoal Bed Vacuum System
Energy Technology Data Exchange (ETDEWEB)
The simulation of the Auxiliary Charcoal Bed (ACB) Vacuum System was performed to evaluate the original vacuum system design, detect and identify design deficiencies, investigate the effects of proposed corrections on system performance, and generally aid in refining the system design before construction and mockup testing. The simulation was performed by using the Advanced Continuous Simulation Language (ACSL). The vacuum system design goals are to provide approximately 20 SCFM of both booster gas and purge gas through the system and maintain a flow of approximately 40 SCFM with a velocity of 50 to 75 f/sec at the entrance to the cyclone separator. The model results showed that the original system design was incapable of meeting the system performance goals. Further simulations showed that the following modifications to the original vacuum system design were required to make the ...
2000-10-26
Survival of gas phase amino acids and nucleobases in space radiation conditions
We present experimental studies on the photoionization and photodissociation processes (photodestruction) of gaseous amino acids and nucleobases in interstellar and interplanetary radiation conditions analogs. The measurements have been undertaken at the Brazilian Synchrotron Light Laboratory (LNLS), employing vacuum ultraviolet (VUV) and soft X-ray photons. The experimental set up basically consists of a time-of-flight mass spectrometer kept under high vacuum conditions. Mass spectra were obtained using photoelectron photoion coincidence technique. We have shown that the amino acids are effectively more destroyed (up to 70-80%) by the stellar radiation than the nucleobases, mainly in the VUV. Since polycyclic aromatic hydrocarbons have the same survival capability and seem to be ubiquitous in the ISM, it is not unreasonable to predict that nucleobases could survive in the interstellar medium and/or in comets, even as a ...
2008-01-01
Inflation and reheating in Bianchi type-IX cosmology
Energy Technology Data Exchange (ETDEWEB)
Within the framework of the Bianchi type-IX homogeneous space, we set up a system of coupled equations for the cosmic scale factors, scalar field, and radiative energy density. At the tree level, the equations are written in a self-consistent, Hartree-Fock form. For phi/sup 4/ theory, the system of nine first-order differential equations is solved numerically for a varying ratio of the energy of anisotropy to the vacuum energy. As the vacuum energy increases, there appears to be less reheating, since the energy of anisotropy is more efficiently converted into isotropic expansion. If the energy of anisotropy is large enough, the inflationary phase is prevented. In this case, a series of cosmological phase transitions will take place each time the square of the effective mass changes its sign.
1985-02-15
Inflation and reheating in Bianchi type-IX cosmology
International Nuclear Information System (INIS)
Within the framework of the Bianchi type-IX homogeneous space, we set up a system of coupled equations for the cosmic scale factors, scalar field, and radiative energy density. At the tree level, the equations are written in a self-consistent, Hartree-Fock form. For phi"4 theory, the system of nine first-order differential equations is solved numerically for a varying ratio of the energy of anisotropy to the vacuum energy. As the vacuum energy increases, there appears to be less reheating, since the energy of anisotropy is more efficiently converted into isotropic expansion. If the energy of anisotropy is large enough, the inflationary phase is prevented. In this case, a series of cosmological phase transitions will take place each time the square of the effective mass changes its sign.
Full-scale model of cooling and heating system for JT-60 vacuum vessel
A full-scale model of a rigid sectorial ring and a set of bellows which was covered with a temperature control layer and a coolant supply equipment was constructed to verify the adequacy of the heating and cooling system designed for JT-60. To cool and heat it effectively and to decrease the temperature differences among the various parts in the vacuum vessel, heater units and cooling pipes were located on the surface of the ring. The temperature control layer is to heat the vessel to 500/degree/sub //C within 70 hours and to maintain it at the temperature for 48 hours for simulating the state of bakeout. Subsequently the vessel is cooled down within about the same time as in heating. Prior to the series of tests, numerical analyses were performed to predict the cooling and heating efficiencies on the model and to examine the method of the temperature regulation.
1981-01-01
Field theory description of neutrino oscillations
We review various field theory approaches to the description of neutrino oscillations in vacuum and external fields. First we discuss a relativistic quantum mechanics based approach which involves the temporal evolution of massive neutrinos. To describe the dynamics of the neutrinos system we use exact solutions of wave equations in presence of an external field. It allows one to exactly take into account both the characteristics of neutrinos and the properties of an external field. In particular, we examine flavor oscillations an vacuum and in background matter as well as spin flavor oscillations in matter under the influence of an external electromagnetic field. Moreover we consider the situation of hypothetical nonstandard neutrino interactions with background fermions. In the case of ultrarelativistic particles we reproduce an effective Hamiltonian which is used in the standard quantum mechanical approach for the ...
2010-01-01
Disorder on the string theory landscape may significantly affect dynamics of eternal inflation leading to the possibility for some vacua on the landscape to become dynamically preferable over others. We systematically study effects of a generic disorder on the landscape starting by identifying a sector with built-in disorder -- a set of de Sitter vacua corresponding to compactifications of the Type IIB string theory on Calabi-Yau manifolds with a number of warped Klebanov-Strassler throats attached randomly to the bulk part of the Calabi-Yau. Further, we derive continuum limit of the vacuum dynamics equations on the landscape. Using methods of dynamical renormalization group we determine the late time behavior of the probability distribution for an observer to measure a given value of the cosmological constant. We find the diffusion of the probability distribution to significantly slow down in sectors of the landscape where the number of ...
2008-01-01
International Nuclear Information System (INIS)
Full text: It was recently-established for hexagonal barium ferrite-industrially important magnetically hard material that refinement of the crystallite dimensions into the nanoscale regime, typically #<=# 10 nm, leads after heat treatment at temperatures 800-1000 deg C to significant coercivity increase of up to 6.5 kOe (#approx#3-4 times) with saturation magnetisation values of 50-55 emu/g (#approx#95% of bulk at room temperature). High-energy mechanochemical processing has been applied to prepare nanostructural (nanocrystalline-amorphous) composites. High resolution electron microscopy studies reveal that the enhancement of the final magnetic properties was due to formation of magnetically noninteracting #approx#l,#mu#m Ba-ferrite particles with 5-10 nm amorphous surface layer - depending on annealing parameters. Similar situation was established also for ball milled strontium ferrite (SrFe_1_2O_1_9) powders where short annealing 4 h at ...
High frequency limit of vacuum microelectronic grating free-electron laser
International Nuclear Information System (INIS)
The dependencies that limit high frequency operation of a vacuum microelectronic grating free-electron laser are examined. The important parameters are identified as the electron beam energy, emittance, and generalized perveance. The scaling of power with emittance and frequency is studied in the far-infrared spectral range using a modified scanning electron microscope (SEM) and submillimeter diffraction gratings. The SEM is suited to the task of generating and positioning a low emittance (10"-"2#pi#-mm-mrad), low current (100 #mu#A), but high current density (50-500 A cm"-"2) electron beam. It has been used to demonstrate the spontaneous emission process known as the Smith-Purcell effect. A vacuum microelectronic grating free-electron laser has the potential of generating radiation throughout the entire far-infrared spectral range which extends from approximately 10 to 10"3#mu#m. An introduction to the theory, initial ...
1995-08-21
Vacuum energy of eleven-dimensional supergravity
Energy Technology Data Exchange (ETDEWEB)
The authors calculate the effective potential for the bosonic sector of eleven-dimensional supergravity on the background (Minkowski) x (sphere). No tachyons are found, and it is shown that the antisymmetric tensor field does not threaten graviton dominance when the Freund-Rubin parameter (m) vanishes. The general case (m not = O) seems untractable in the present formalism.
1987-11-01
Nonformity of the electron density in amorphous silicon films
Energy Technology Data Exchange (ETDEWEB)
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
1985-12-01
A magneto-electric quantum wheel
Here we show that self-propulsion in quantum vacuum may be achieved by rotating or aggregating magneto-electric nano-particles. The back-action follows from changes in momentum of electro-magnetic zero-point fluctuations, generated in magneto-electric materials. This effect may provide new tools for investigation of the quantum nature of our world. It might also serve in the future as a "quantum wheel" to correct satellite orientation in space.
2009-01-01
Optimization of INCOLOY alloy 800 mechanical properties for various power plant requirements
International Nuclear Information System (INIS)
The AMSE Boiler Code development of design stresses and their optimization for alloys 800 and 800H for conventional and nuclear power plants have coincided with many successful trial installations of these grades of alloy 800. These trial installations, along with laboratory tests, have shown that alloy 800H can be used for long times with a retention of good mechanical properties, including ductility. While gamma prime can be formed, it soon loses its detrimental effect on ductility in service. Sensitization of the alloy also occurs but it, too, has a decreasing effect on corrosion resistance with time in service, especially at elevated temperatures. The authors discuss all of these aspects and conclude that alloy 800 perhaps with low carbon control in the annealed (1800 to 1950degF)(982 to 1066degC) condition gives the optimum combination of properties to 1050degF(566degC) and alloy 800H (.05 to .10%C) solution ...
Neutron irradiation of superconducting compounds
International Nuclear Information System (INIS)
The effects of neutron irradiation on the superconducting and normal state properties of alloys and compounds are presented. Particular emphasis is placed on the A-15 compounds where the effects of neutron irradiation on Tsub(c), Hsub(c_2), long range order parameter and lattice parameter are described. Large depressions (up to 80%) in Tsub(c) are observed for all the A-15 compounds studied with the exception of Mo_3Os where much smaller decreases in Tsub(c) are seen. Along with the decrease in Tsub(c) and increase in lattice parameter, the degree of long range order, as measured by X-ray and neutron diffraction, decreases. Also presented are the results of isothermal and isochronal anneals up to 900"0C. The unirradiated value of Tsub(c) can be restored by annealing, and for those systems where measurements have been made, recovery of the lattice parameter and order parameter also takes place. The ...
Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10{sup 13} cm{sup -3}, 100 keV) through a chemical vapor deposition (CVD) Si{sub 3}N{sub 4} film. For a half of samples, Si{sub 3}N{sub 4} was etched off and SiO{sub 2} films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si{sub 3}N{sub 4} and Si/SiO{sub 2} interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO{sub 2} and Si{sub 3}N{sub 4} films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior ...
2002-01-01
Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO_2 cover film, amount of dose ...
2002-01-01
Antioxidant properties of natural substances in irradiated fresh poultry
Energy Technology Data Exchange (ETDEWEB)
This study was undertaken to determine if a combined treatment (marinating in natural plant extracts or vacuum) with irradiation could have a synergistic effect, in order to prevent the lipid oxidation resulting in the development of undesirable flavours. The fresh chicken legs were irradiated at 0,3 and 5 kGy. The fatty acids composition of lipids was identified using gas liquid chromatography. The effect of irradiation treatment combined with a pre-treatment on the fatty acids composition was followed. The day after irradiation, ten panallists were asked to evaluate, using the instruction scaling, the overall appearance, the odor, the flavor and the overall acceptability of the samples. The major fatty acids identified in lipids were oleic acid, palmitic acid, palmitoleic acid and stearic acid. Pre-treatments have a significant effect on linoleic acid (C18:2) and higher fatty acids. The unsaturated ...
1998-06-01
Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon
Energy Technology Data Exchange (ETDEWEB)
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been ...
2004-02-01
Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon
International Nuclear Information System (INIS)
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect ...
2004-02-01
Neutron irradiation effects in austenitic alloys
International Nuclear Information System (INIS)
The post (neutron) -irradiation high-temperature tensile and creep-rupture properties, deformation and fracture characteristics of austenitic alloys, particularly solution annealed Type 316 steel, are surveyed and correlated with the damage structures developed as a function of irradiation temperature (and dose). The mechanisms proposed to explain the irradiation-induced changes in properties and behaviour are summarised. The factors responsible for the observed differences in the post-irradiation and 'in-reactor' creep-rupture properties and behaviour of an austenitic steel are discussed in terms of the helium gas and stress driven growth of small intergranular bubbles and the atom plating associated with their growth and coalescence. (author).
1980-03-01
International Nuclear Information System (INIS)
In a program to develop a metastable beta alloy with improved fracture toughness, it was found that the tensile ductility of the alloy Ti-8 Mo-4.5 Cr-2.5 Al was strongly dependent on both processing history and annealing temperature. Evaluation of the microfracture mode of tensile samples by scanning electron microscope and metallographic techniques showed that the presence of a continuous grain boundary alpha is the most significant parameter controlling the ductility and is highly detrimental. It is concluded that, for optimum processing, the material must be worked prior to aging to avoid this grain boundary phase.
Creep properties of modified 9 Cr-1 Mo steel
Energy Technology Data Exchange (ETDEWEB)
Creep properties of modified 9 Cr-1 Mo steel, an alloy significantly improved in elevated-temperature strength over 2 1/4 Cr-1 Mo and other similar alloys, are presented here. Data are primarily on material in the normalized and tempered condition. Effects of variables such as isothermal annealing treatment, cold work, normalizing temperature, tempering temperature, notch, and biaxial stress state have also been examined. Data analysis and comparisons have shown that modified 9 Cr-1 Mo alloy is very insensitive in response to several material variables, heat treatments, and specimen design variables.
1983-01-01
Energy Technology Data Exchange (ETDEWEB)
The main goal of this research is to delineate the wetting behavior of coal and it subsequent effects on fine coal processing. As both bulk and surface properties of coal are interrelated and have a controlling role on the performance of these processes, a detailed study has been undertaken to correlate their influence on both wetting behavior and the response of coal to flotation and other unit operations encountered in fine coal processing. During the last quarter, the effect of coal rank on water retention capacity was investigated. The effect of pH on the vacuum flotation yield and the effect of desliming on the film flotation response of coal were also studied. 6 refs., 5 figs.
1989-04-01
British Library Electronic Table of Contents (United Kingdom)
Heat transfer through the gas diffusion layer (GDL) is a key process in the design and operation of a PEM fuel cell. The analysis of this process requires determination of the effective thermal conductivity as well as the thermal contact resistance associated with the interface between the GDL and adjacent surfaces/layers. In the present study, a custom-made test bed that allows the separation of effective thermal conductivity and thermal contact resistance in GDLs under vacuum and ambient conditions is described. Measurements under varying compressive loads are performed using Toray carbon paper samples with a porosity of 78% for a range of thicknesses. The measurements are complemented by compact analytical models that achieve good agreement with experimental data. A key finding is that ...
2011-01-01
Focused ion-beam line profiles: A study of some factors affecting beam broadening
Energy Technology Data Exchange (ETDEWEB)
The current--density profile of a focused ion beam (FIB) has a central peak accompanied by broader ``wings`` that, while unimportant in lithographic applications, can lead to unwanted effects during an implantation operation. The origin of the wings, and hence the best way to minimize them, is not clear and needs further study. We have measured the line profiles of several of the ions available in our FIB machine as a function of a number of variables, under ultrahigh vacuum (UHV) conditions. No effects are observed from changes in emission current or deliberate defocusing of the objective lens. There are some changes with beam aperture and/or current, but the biggest differences seem to be associated with a change of source type and hence, possibly, with a change in the source/extractor configuration or in the alloy and the emission process. The wing amplitudes are appreciably lower than many previously observed, and their ...
1995-11-01
Focused ion-beam line profiles: A study of some factors affecting beam broadening
International Nuclear Information System (INIS)
The current--density profile of a focused ion beam (FIB) has a central peak accompanied by broader ''wings'' that, while unimportant in lithographic applications, can lead to unwanted effects during an implantation operation. The origin of the wings, and hence the best way to minimize them, is not clear and needs further study. We have measured the line profiles of several of the ions available in our FIB machine as a function of a number of variables, under ultrahigh vacuum (UHV) conditions. No effects are observed from changes in emission current or deliberate defocusing of the objective lens. There are some changes with beam aperture and/or current, but the biggest differences seem to be associated with a change of source type and hence, possibly, with a change in the source/extractor configuration or in the alloy and the emission process. The wing amplitudes are appreciably lower than many previously observed, and their ...
Vacuum structures in Hamiltonian light-front dynamics
Energy Technology Data Exchange (ETDEWEB)
Hamiltonian light-front dynamics of quantum fields may provide a useful approach to systematic nonperturbative approximations to quantum field theories. The authors investigate inequivalent Hilbert-space representations of the light-front field algebra in which the stability group of the light front is implemented by unitary transformations. The Hilbert space representation of states is generated by the operator algebra from the vacuum state. There is a large class of vacuum states besides the Fock vacuum which meets all the invariance requirements. The light-front Hamiltonian must annihilate the vacuum and have a positive spectrum. Relations are exhibited of the Hamiltonian to the nontrivial vacuum structure. 30 refs.
1994-03-01
Requirements and guidelines for NSLS experimental beam line vacuum systems: Revision A
Energy Technology Data Exchange (ETDEWEB)
Requirements are provided for NSLS beam line front ends and vacuum interlocks. Guidelines are provided for UHV beam line vacuum systems, including materials, vacuum hardware (pumps, valves, and flanges), acoustic delay lines and beam line fast valves, instrumentation, fabrication and testing, and the NSLS cleaning facility. Also discussed are the design review for experimenters' equipment that would be connected to the NSLS and acceptance tests for any beam line to be connected with the ring vacuum. Also appended are a description of the acoustic delay line as well as the NSLS vacuum standards and NSLS procedures. (LEW)
1986-10-01
British Library Electronic Table of Contents (United Kingdom)
Methods of X-ray diffraction and transmission electron microscopy were used to study the microstructure of dispersion-strengthened Cu-Al2O3 nanocomposites obtained by the method of simultaneous deposition of Cu and Al2O3 from the vapor phase. The effect of the size of particles of the oxide (Al2O3) and of their content on the electrical resistance of the composite has been considered. The results obtained make it possible to suppose that the main structural factor that determines the electrical resistance of the composite are nanodispersed particles of Al2O3 with a size of less than 20 nm.
2011-01-01
Kaon properties in (proto-)neutron star matter
British Library Electronic Table of Contents (United Kingdom)
Abstract. The modification of kaon and antikaon properties in the interior of (proto-)neutron stars is investigated using a chiral SU(3) model. The parameters of the model are fitted to nuclear-matter saturation properties, baryon octet vacuum masses, hyperon optical potentials and low-energy kaon-nucleon scattering lengths. We study the kaon/antikaon medium modification and explore the possibility of antikaon condensation in (proto-)neutron star matter at zero as well as finite temperature/entropy and neutrino content. The effect of hyperons on kaon and antikaon optical potentials is also investigated at different stages of the neutron star evolution.
2010-01-01
Ion motion and finite temperature effect on relativistic strong plasma waves
The influence of motion of ions and electron temperature on nonlinear one-dimensional plasma waves with velocity close to the speed of light in vacuum investigated. It is shown that although the wavebreaking field weakly depends on mass of ions, the nonlinear relativistic wavelength essentially changes. The nonlinearity leads to the increase of the strong plasma wavelength, while the motion of ions leads to the decrease of the wavelength. Both hydrodynamic approach and kinetic one, based on Vlasov-Poisson equations, are used to investigate the relativistic strong plasma waves in a warm plasma. The existence of relativistic solitons in a thermal plasma is predicted.
1998-01-01
In situ bioremediation using horizontal wells. Innovative technology summary report
Energy Technology Data Exchange (ETDEWEB)
In Situ Bioremediation (ISB) is the term used in this report for Gaseous Nutrient Injection for In Situ Bioremediation. This process (ISB) involves injection of air and nutrients (sparging and biostimulation) into the ground water and vacuum extraction to remove Volatile Organic Compounds (VOCs) from the vadose zone concomitant with biodegradation of the VOCs. This process is effective for remediation of soils and ground water contaminated with VOCs both above and below the water table. A full-scale demonstration of ISB was conducted as part of the Savannah River Integrated Demonstration: VOCs in Soils and Ground Water at Nonarid Sites. This demonstration was performed at the Savannah River Site from February 1992 to April 1993.
1995-04-01
Boring of full scale deposition holes using a novel dry blind boring method
Energy Technology Data Exchange (ETDEWEB)
As a part of the Finnish radioactive waste disposal research three holes (the size of deposition holes) were bored in the research tunnel at Olkiluoto in Finland. A novel full-face boring technique was used based on rotary crushing of rock and removal of crushed rock by vacuum flushing through the drill string an the purpose of the work was to demonstrate the feasibility of the technique. During the boring test procedures were carried out in order to determine the effect of charges in operating parameters on the performance of the boring machine and the quality of the hole. (refs.).
1996-11-01
All Optical Switch of Vacuum Rabi Oscillations: The Ultrafast Quantum Eraser
We study the all-optical time-control of the strong coupling between a single cascade three-level quantum emitter and a microcavity. We find that only specific arrival-times of the control pulses succeed in switching-off the Rabi oscillations. Depending on the arrival times of control pulses, a variety of exotic non-adiabatic cavity quantum electrodynamics effects can be observed. We show that only control pulses with specific arrival times are able to suddenly switch-off and -on first-order coherence of cavity photons, without affecting their strong coupling population dynamics. Such behavior may be understood as a manifestation of quantum complementarity.
2010-01-01
Vacuum instability and tachyons: comments on a paper by Zeldovich
International Nuclear Information System (INIS)
It is shown that vacuum instabilities possibly arising because of tachyons do not contradict any experimental evidence, and therefore that no objection against tachyon existence can be found even on this ground. (Auth.).
Cold vacuum drying facility design requirements; FINAL
International Nuclear Information System (INIS)
This document provides the detailed design requirements for the Spent Nuclear Fuel Project Cold Vacuum Drying Facility. Process, safety, and quality assurance requirements and interfaces are specified.
High frequency breakdown voltage
Energy Technology Data Exchange (ETDEWEB)
This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O{degrees}C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f{sub c}, the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f{sub ce}, ...
1992-03-01
Energy Technology Data Exchange (ETDEWEB)
Improvement in efficiency and profitability of hydrogenation reaction of heavy hydrocarbon resources is the most important matter to be done. In this study, coprocessing of coal and heavy oil vacuum residue was conducted using syngas-water as a hydrogen source. For the investigation of effect of the reaction temperature during the coprocessing of Wandoan coal and Arabian heavy vacuum residue using Fe(CO)5 as a catalyst, the conversion, 66.0% was obtained at 425{degree}C. For the investigation of effect of reaction time, the yield of light fractions further increased during the two stage reaction at 400{degree}C for 60 minutes and at 425{degree}C for 60 minutes. Finally, almost 100% of THF-soluble matter was obtained through the reaction using 2 mmol of Fe(CO)5 catalyst at 400{degree}C for 60 minutes, and hydrogenation of heavy oil was proceeded simultaneously. When comparing coprocessing reactions using ...
1996-10-28
Thermal Casimir-van der Waals Interaction between Randomly Charged Dielectrics
Monopolar charge disorder effects are studied in the context of fluctuation-induced interactions between neutral dielectric slabs. It is shown that quenched bulk charge disorder gives rise to an additive contribution to the net interaction force which decays as the inverse distance between dielectric surfaces. This effect may thus completely mask the standard Casimir--van der Waals effect. By contrast, annealed (bulk or surface) charge disorder leads to a net interaction force whose large-distance behavior coincides with the universal Casimir force between perfect conductors, which scales as inverse cubic distance, and the dielectric properties enter only in subleading corrections.
2009-01-01
Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon
International Nuclear Information System (INIS)
N-type crystalline Si (100) implanted with 5 keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO_2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code
2001-12-01
The effect of boron implant energy on transient enhanced diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results imply there are at least ...
1997-02-01
International Nuclear Information System (INIS)
Thermochromic tungsten-doped vanadium dioxide (VO2) powders were successfully synthesized by thermal reduction using V2O5 as a vanadium precursor. The products were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The results indicated that W was successfully doped into the crystal lattice of VO2 matrix, and prepared tungsten-doped VO2 had a rod-like morphology. The effects of reducing temperature and annealing temperature on the crystallographic structures were also discussed. The phase transition temperature (Tt) of VO2 could be simply tuned by changing the doping concentration of tungsten. When the doping concentration was 1.58 mol%, the Tt could be reduced to 37.8 oC from initial 69.5 oC, suggesting that tungsten-doped VO2 possesses prominent thermochromic properties and optical switching characters. It has shown that this ...
2010-08-20
Pole placement technique for PSS and TCSC-based stabilizer design using simulated annealing
Energy Technology Data Exchange (ETDEWEB)
A pole placement technique for power system stabilizer (PSS) and thyristor controlled series capacitor (TCSC) based stabilizer using simulated annealing (SA) algorithm is presented in this paper. The proposed approach employs SA optimization technique to PSS (SAPSS) and TCSC-based stabilizer (SACSC) design. The design problem is formulated as an optimization problem where SA is applied to search for the optimal setting of the proposed SAPSS and SACSC parameters. A pole placement-based objective function to shift the dominant eigenvalues to the left in the s-plane is considered. The proposed SAPSS and SACSC have been examined on a weakly connected power system with different disturbances, loading conditions, and system parameter variations. Eigenvalue analysis and nonlinear simulation results show the effectiveness and the robustness of the proposed stabilizers and their ability to provide efficient damping of low frequency oscillations. In ...
2000-11-01
Optimization of advanced PMOS junctions using Ge, B and F co-implants
International Nuclear Information System (INIS)
The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ ...
2005-08-01
Growth and characterisation of electrodeposited ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying ...
2008-04-30
Formation kinetics and work function tuning of Pd_2Si fully silicided metal gate
International Nuclear Information System (INIS)
The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in the opposite direction to that of the NiSi FUSI gate for As, P, ...
2007-04-01
British Library Electronic Table of Contents (United Kingdom)
Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO2/SiOx /SiO2/Si(100) stacked structure. The chemical composition of SiOx layer was controlled by changing the SiH4, He, and O2 gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 1012 cm-2 carriers are injected to or emitted from Si nanocrystals. The duration of 1 V shift in flatband vo...
2010-01-01
Deuterium retention in titanium alloys exposed in PLT
International Nuclear Information System (INIS)
Specimen strips of pure alpha titanium and beta titanium alloy were exposed to a range of up to 46 deuterium plasma discharges in the Princeton Large Torus Tokamak (PLT) under simulated first wall conditions, and the amount of trapped deuterium in these specimens was measured, using carbon as a calibration standard for trapping. The Deuterium Nuclear Microprobe was used to study the total trapped deuterium and the deuterium depth distribution in the exposed materials before and after annealing at 373 and 423"0K. The Scanning Auger Microprobe was used to identify the effects of surface impurities on the deuterium distribution. Results indicate that about 20 to 40% of the incident deuterium was trapped by the surface and about 90% of the trapped deuterium remained in a 20A carbonaceous film deposited during plasma exposure. Annealing resulted in a gradual loss from the film. These results indicate the importance of impurity ...
1981-07-01
Energy Technology Data Exchange (ETDEWEB)
For a reliable design against fatigue failure of high-temperature components of different types of the heat resistant material Alloy 800, verified parameters of the low-cycle fatigue (LCF) behaviour are required. These parameters were obtained by a scatterband evaluation of the results of low-cycle fatigue tests, using a computerized data bank which includes all available actual data sets. The results of the evaluation are presented as mean fatigue curves with the upper and lower boundary limits of the scatterbands. For the type Alloy 800 in the recrystallization annealed condition, the results cover a temperature range from 20 to 750deg C; for the solution annealed types they cover a temperature range from 20 to 950deg C. Specimens tested in HTR helium at high temperatures had longer lives than specimens tested in air. This effect was represented quantitatively by the ratio of the total strain ranges from tests in HTR ...
1990-05-01
International Nuclear Information System (INIS)
Epitaxial CeO_2 buffer layers were fabricated by pulsed laser deposition (PLD) on r-cut sapphire substrates. An atomically flat CeO_2 surface with a high density of nanodots was formed by a self-assembly process. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy investigation showed that the nanodots were CeO_2 other than impurities. YBa_2Cu_3O_7_-_#delta# (YBCO) thin films were then grown on the annealed and the as-grown CeO_2-buffered sapphires by PLD. The transport measurement results showed that the nanodots enhanced the effective pinning potential and significantly increased critical current density (J _c). Especially, YBCO films with an annealed CeO_2 buffer layer showed a high J _c peak when the applied field was directed along the c-axis of YBCO. Cross-section transmission electron microscopy investigation revealed that the J _c peaks in YBCO with annealed CeO_2 ...
2006-12-05
Energy Technology Data Exchange (ETDEWEB)
Cassava is cultivated almost all over the world and it is considered one of the most important nutritious sources of calories in the human diet. Cassava is a viable food against starvation in several poor areas of the world because it is an extremely resistant culture and may reach satisfactory economical yield. We utilized vacuum packed industrialized cassava irradiated with 0,1 kGy, 3kGy and 5kGy and stored under refrigeration for 1, 21, 30 and 50 days. Our objective was to analyse the synergistic effect of vacuum packing, irradiation and refrigeration on the preservation of minimally processed cassava. The samples were analyzed for pH, acidity, weight, humidity, texture and color. The irradiation did not affect the chemical characteristics of the cassava. Neither the pH nor the acidity, the most relevant variables to verify deterioration in cassava, presented significant alterations during the period of storage. ...
2005-07-01
Water uptake and exchange kinetics of polyelectrolyte films: a neutron reflectometry study
Energy Technology Data Exchange (ETDEWEB)
The sequential layer-by-layer adsorption of polyanions and polycations to build polyelectrolyte multilayers has triggered enormous interest in their potential uses in a wide range of fields, from photonic to pharmaceutical applications. We show that the conformation of the solvent swollen films - prior to drying - is determined by the initial adsorption conditions, but can be altered ex-situ by exposure to a liquid phase of very high ionic strength. Recently it has been observed that the swelling depends on the charge of the outermost layer. In the PAH/PSS system we saw that assemblies with PSS as the outermost layer swell more than those with PAH outside. A neutron reflectivity study of this effect in addition indicated the existence of two kinds of water, bound with different strength within the films. Beside an unexpected two-step kinetics of swelling, the reflectivity curves of the layers against vacuum before and after re-hydration in ...
2007-07-01
On Geometrical Interpretation of Non-Abelian Flat Direction Constraints
In order to produce a low energy effective field theory from a string model, it is necessary to specify a vacuum state. In order that this vacuum be supersymmetric, it is well known that all field expectation values must be along so-called flat directions, leaving the F- and D-terms of the scalar potential to be zero. The situation becomes particularly interesting when one attempts to realize such directions while assigning VEVS to fields transforming under non-Abelian representations of the gauge group. Since the expectation value is now shared among multiple components of a field, satisfaction of flatness becomes an inherently geometrical problem in the group space. Furthermore, the possibility emerges that a single seemingly dangerous F-term might experience a self-cancellation among its components. The hope exists that the geometric language can provide an intuitive and immediate recognition of when the D and F ...
2005-01-01
Study of nanocrystallization in FINEMET alloy by active screen plasma nitriding
International Nuclear Information System (INIS)
The nanocrystallization process of amorphous Fe_7_3_._5Si_1_3_._5B_9Nb_3Cu_1 was investigated by active screen plasma nitriding (ASPN) treatment at temperatures ranging from 410 "oC to 560 "oC for 3 h in two gas mixtures of 75% N_2-25% H_2 and 25% N_2-75% H_2 at 5 mbar atmosphere. The amorphous ribbons were then annealed under vacuum at the same time and temperatures mentioned above. The structure of the samples was analyzed using various techniques such as X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). Microhardness measurements, electrical resistivity and Vibrating Sample Magnetometer (VSM) were used to study mechanical, electrical and magnetic properties of the samples, respectively. It was observed that the ASPN treatment leads to finer grain size and higher crystalline volume fraction and modifies the structural features of Fe(Si) phase. The Fe(Si) lattice parameter for the nitrided ...
2010-02-18
British Library Electronic Table of Contents (United Kingdom)
This work is focused on effect of various cooling strategies on surface roughness and tool wear during computer aided milling of soft workpiece materials. These milling operations were selected as dry milling, cool air cooling milling and fluid cooling milling. A cool air cooling system was designed and produced to cool end milling tools. Cool air was produced by a vortex tube. Annealed AISI 1050 was used as the workpiece material and cutting tool material was selected as HSS-Co8 DIN 844/BN. Optimal cutting parameters were selected according to workpiece hardness from reference catalog and kept for all tests. Tool wear and surface quality were measured for three different cooling types changing from ten minute machining time to thirty minute machining time. As a result, the surface roughne...
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting in suppression of ...
1997-05-01
Giant magnetoimpedance effect and voltage response in meander shape Co-based ribbon
British Library Electronic Table of Contents (United Kingdom)
Field-annealed Co-based amorphous ribbon (Metglas? 2705M) with a meander structure is fabricated by MEMS technology and the giant magnetoimpedance (GMI) effects are studied at different magnetic fields and frequencies. The maximum longitudinal GMI ratio of the ribbon is 193.7% and the magnetic field sensitivity is 17.4%/Oe. The maximum GMI ratio of the meander ribbon is much larger than the single strip ribbon mainly due to the larger change ratio of inductance L. The sensitivity of an output U reach up to 10 V/A and U thermal fluctuation is less than 15 mV in the temperature range of ?20 to 40?C. This meander shape ribbon can be considered as a good candidate for the GMI-based sensor fabrication.
2010-01-01
Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation
Energy Technology Data Exchange (ETDEWEB)
The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.
2005-08-01
Tritium release from lithium orthosilicate pebbles deposited with palladium
International Nuclear Information System (INIS)
Full text of publication follows: Slightly over-stoichiometric lithium orthosilicate pebbles have been selected as one optional breeder material for the European Helium Cooled Pebble Bed (HCPB) blanket. This material has been developed in collaboration of Research Center Karlsruhe and the Schott Glass, Mainz. The lithium orthosilicate pebbles are fabricated from lithium hydroxide and silica by a melting and spraying method in a semi-industrial scale facility. Lithium hydroxide was selected as the precursor since enriched lithium hydroxide is commercially available. The lithium orthosilicate pebbles produced by the process contains oxide phases besides orthosilicate, but it was also found that the oxide phases can be decomposed by annealing at high temperatures. The lithium orthosilicate pebbles produced in this way possesses satisfactory pebble characteristics. Therefore, the authors performed out-of-pile annealing tests using the lithium ...
2007-12-10
Energy Technology Data Exchange (ETDEWEB)
Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several ...
1994-12-01
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution ...
1997-05-01
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left ...
Vacuum container for use in a thermonuclear device
International Nuclear Information System (INIS)
Purpose: To enable the use of a vacuum container under a relatively high temperature or a high level radioactive dose. Constitution: Vacuum sealing materials for use in a vacuum container are made of resins such as polyimide and polyamide. The sealing materials are joined to the both surfaces of a plate-like insulator by means of adhesives or sealants, or the sealing materials are joined between two plate-like insulators by means of adhesives or sealants. They are situated within grooves of both of flanges, which are clamped tightly by insulation bolt and nut. Since the vacuum sealing materials are joined to the insulator by means of the adhesives or sealants, the reliability of the vacuum sealing can be improved without impairing the electrical insulation. The resin of the vacuum sealing material can be used for the radiation dose up to 10"8 rad, temperature up ...
1982-04-30
Pulsed laser deposition of titanium-carbonitride thin films
Energy Technology Data Exchange (ETDEWEB)
The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).
1997-05-15
LCLS XTOD Tunnel Vacuum System (XVTS)
Energy Technology Data Exchange (ETDEWEB)
The vacuum system of the XVTS (X-Ray Vacuum Transport System) for the LCLS (Linac Coherent Light Source) XTOD (X-ray Transport, Optics and Diagnostics) system has been analyzed and configured by the Lawrence Livermore National Laboratory's NTED (New Technologies Engineering Division) as requested by the SLAC/LCLS program. The system layout, detailed analyses and selection of the vacuum components for the XTOD tunnel section are presented in this preliminary design report. The vacuum system was analyzed and optimized using a coupled gas load balance model of sub-volumes of the components to be evacuated. Also included are the plans for procurement, mechanical integration, and the cost estimates.
2005-11-04
High-pressure gas quenching in cold chambers for increased cooling capacity
Energy Technology Data Exchange (ETDEWEB)
Gas quenching for the hardening of steel parts is a lower-pollution alternative to quenching in quenchants such as oil or salt. As the surfaces of the cooled parts remain clean after gas quenching, there is no need to wash them after heat treatment, which reduces the consumption of oils and detergents. The fire risk and ventilation requirements of oil quenching are eliminated. In addition, some trials have shown that gas quenching has a positive effect on distortion, representing a saving in finishing work and thus a reduction in costs. Today, gas quenching is used almost solely in vacuum furnaces. Quenching is normally performed in the same chamber as heating, which means that besides quenching the batch, the quenching system must also remove heat from the heating elements and insulation of the furnace. Previous trials performed by IVF have shown that gas quenching with helium of ball bearing and carburizing steels (and other steels) in sizes ...
1996-12-31
High resolution electron microscopy study of as-prepared and annealed tungsten-carbon multilayers
International Nuclear Information System (INIS)
A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500 degrees C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period.As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions.
Energy Technology Data Exchange (ETDEWEB)
The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.
2008-10-31
Tin doping in spray pyrolysed indium sulfide thin films for solar cell applications
British Library Electronic Table of Contents (United Kingdom)
This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...
2010-01-01
Thermal diffusivity of homogeneous SBR MOX fuel with a burn-up of 35 MWd/kgHM
International Nuclear Information System (INIS)
The effect of burn-up on the thermal conductivity of homogeneous SBR MOX fuel is investigated and compared with standard UO_2 LWR fuel. New thermal diffusivity results obtained on SBR MOX fuel with a pellet burn-up of 35 MWd/kgHM are reported. The thermal diffusivity measurements were carried out at three radial positions using a shielded 'laser-flash' device and show that the thermal diffusivity increases from the pellet periphery to the centre. The fuel thermal conductivity was found to be in the same range as for UO_2 of similar burn-up. The annealing behaviour was characterized in order to identify the degradation due to the out-of-pile auto-irradiation.
2010-05-31
Energy Technology Data Exchange (ETDEWEB)
Different cooling speeds after previous solution annealing at 1130deg C for 0.5 hour were simulated in laboratory experiments. The following conditions were examined: (1) Direct water quenching, (2) cooling in air for 0.5 min to 950deg C/water quenching, (3) cooling in air for 1.5 min to 750deg C/water quenching, (4) cooling in furnace for 5 min to 750deg C/water quenching. The results of the investigations have shown that a variation of the cooling conditions causes considerable changes in the creep behaviour. (orig.).
1987-01-01
Study of point defect detectors in Si
International Nuclear Information System (INIS)
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well
1999-05-01
British Library Electronic Table of Contents (United Kingdom)
This paper presents a dynamic displacement influence line method for moving load identification on bridge. The finite element model of Poyang Lake continuous truss bridge-train systems is established and the dispersed modal shapes are acquired by modal analysis. Multi-axle moving train loads are identified with simulated annealing genetic algorithm by minimizing the errors between the measured displacements and the reconstructed displacements from the identified moving loads. In the identification process, the dynamic displacement influence line technique is used to calculate the time history displacement responses of the bridge to avoid solving equations of motion of the bridge repetitively. Several important parameters of the bridge-train system are discussed to investigate their effects...
2011-01-01
Development of a new Pb-free solder: Sn-Ag-Cu
Energy Technology Data Exchange (ETDEWEB)
With the ever increasing awareness of the toxicity of Pb, significant pressure has been put on the electronics industry to get the Pb out of solder. This work pertains to the development and characterization of an alloy which is Pb-free, yet retains the proven positive qualities of current Sn-Pb solders while enhancing the shortcomings of Sn-Pb solder. The solder studied is the Sn-4.7Ag-1.7Cu wt% alloy. By utilizing a variety of experimental techniques the alloy was characterized. The alloy has a melting temperature of 217{degrees}C and exhibits eutectic melting behavior. The solder was examined by subjecting to different annealing schedules and examining the microstructural stability. The effect of cooling rate on the microstructure of the solder was also examined. Overall, this solder alloy shows great promise as a viable alternative to Pb-bearing solders and, as such, an application for a patent has been filed.
1995-02-10
Degredation of superconductive properties in type A 15 compounds after irradiation
International Nuclear Information System (INIS)
The influence of irradiation with 2.6 MeV H and He nuclei on the superconducting properties (critical temperature Tsub(c), critical current Isub(c)) of the intermetallic compound Nb_3Sn was studied. Irradiation led to a significant lowering of Tsub(c), while Isub(c) is increasing with the radiation dose. This is assumed to be due to the formation of active pinning centres in the lattice. There is a fast drop of Isub(c) after a peak value has been reached. Annealing of the samples (600-1,000"0C) led to an almost complete recovery of the initial value of Tsub(c). X-ray diffraction showed that irradiation causes considerable distortions of the lattice while the A15 crystal structure is retained. The causes of the radiation effects related to structural defects are discussed. (GSCH).
Anomalous activity of nonbasal dislocations in AZ31 Mg alloys at room temperature
Energy Technology Data Exchange (ETDEWEB)
AZ31 Mg alloy samples were extruded by an equal channel angular extrusion (ECAE) process and subsequently annealed to obtain fine-grained material with a low dislocation density. Tensile tests at room temperature exhibited an apparent steady-state deformation region and a large tensile elongation of 47%. The deformed microstructure at an elongation of 2% indicated a substantial cross-slip to nonbasal planes possibly induced by grain-boundary compatibility effects. The nonbasal segments of dislocations were found to consist of 40% of the total dislocation density at a yield anisotropy factor of only 1.1 instead of an expected value of 100 from single-crystal experiments. (orig.)
2003-07-01
A study on yellow luminescence in O and C ion implanted GaN
International Nuclear Information System (INIS)
The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)
2008-08-01
Use of misoprostol for induction of labour in unvaorable cervix in eclampsia
International Nuclear Information System (INIS)
Objective: To find out safety and efficiency of Misoprostol in cervical ripening and induction of labour to achieve vaginal delivery. Results: From Misoprostol insertion to delivery time was 4-24 hours. Vaginal delivery was achieved in 80.2%, which included spontaneous, forceps and vacuum extraction. Caesarean section rate was 19.7%. Indications for C. Section included Misoprostol unresponsiveness 11% and fetal distress in 8.6%. Oxytocin augmentation was required in 32% of cases. Term babies were 58%. Intrauterine death and neonatal deaths were 9.8% and 8.6% respectively. Hyper stimulation and postpartum haemorrhage was seen in 2.4% and 3.7% of patients respectively. Conclusion: intravaginal Misoprostol is well tolerated and is very effective for the induction of labour in eclampsia. It helps vaginal delivery in toxemic patients, reduces maternal morbidity, mortality and hospital stay. (author)
2004-01-01
UPS fine structures of highest occupied band in vanadyl-phthalocyanine ultrathin film
Energy Technology Data Exchange (ETDEWEB)
Ultraviolet photoelectron spectra were measured for vanadyl phthalocyanine (VOPc) ultrathin films prepared on graphite to study effects of the molecular orientation and the electric dipole layer on the organic electronic states. VOPc has a permanent electric dipole perpendicular to the molecular plane, hence a well-defined electric dipole layer could be intentionally prepared by using the oriented monolayer. The observed binding-energy difference of the highest occupied molecular orbital (HOMO) bands between the oriented monolayer and the double layer was found to agree with the vacuum level shift, leading to a conclusion that the molecular energy level with respect to the substrate Fermi level is changed when the molecule is in the electric dipole layer.
2005-06-15
Total hemispherical emittance measured at high temperatures by the calorimetric method
Energy Technology Data Exchange (ETDEWEB)
A calorimetric vacuum emissometer (CVE) capable of measuring total hemispherical emittance of surfaces at elevated temperatures was designed, built, and tested. Several materials with a wide range of emittances were measured in the CVE between 773 to 923 K. These results were compared to values calculated from spectral emittance curves measured in a room temperature Hohlraum reflectometer and in an open-air elevated temperature emissometer. The results differed by as much as 0.2 for some materials but were in closer agreement for the more highly-emitting, diffuse-reflecting samples. The differences were attributed to temperature, atmospheric, and directional effects, and errors in the Hohlraum and emissometer measurements ({+-} 5 percent). The probable error of the CVE measurements was typically less than 1 percent.
1994-09-01
The electroweak phase transition at m$_{H}$ $\\appprox$ m$_{W}$
We study the finite temperature electroweak transition with non-perturbative lattice Monte Carlo simulations. We find that it is of first order, at least for Higgs masses up to 80 GeV. The critical temperature of the phase transition is found to be smaller than that determined by a 2-loop renormalization group improved effective potential. The jump of the order parameter at the critical temperature is considerably larger than the perturbative value. By comparing lattice data and perturbation theory, we demonstrate that the latter, for the computation of the vacuum expectation value of the Higgs field v(T) in the broken phase at given temperature, converges quite well, provided v(T)/T>1. An upper bound on the Higgs mass necessary for electroweak baryogenesis in the light of the lattice data is briefly discussed.
1994-01-01
British Library Electronic Table of Contents (United Kingdom)
Scanning electron microscope (SEM) is necessary to demonstrate presence or absence of pit membranes in possible perforations or the type of pit membrane remnants in perforations in vessel element end-walls of angiosperms, but it was unconfirmed and questionable whether pit membrane absence in pits was affected by the processing and handling before SEM observations. To solve this question, the secondary xylem of four woody species from primitive angiosperms, Illicium henryi Diels. (Illiciaceae), Schisandra rubriflora (Franch.) Rehd. et Wils. (Schisandraceae), Tetracentron sinensis Oliv. and Trochodendron aralioides Sieb. & Zucc. (Trochodendraceae) was chosen and the following techniques were used: (1) fresh materials were examined in low-vacuum with ESEM. (2) Air-dried materials were examin...
2011-01-01
Technology of GaAs metal-oxide-semiconductor solar cells
The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.
1977-01-01
Strong laser fields as a probe for fundamental physics
Upcoming high-intensity laser systems will be able to probe the quantum-induced nonlinear regime of electrodynamics. So far unobserved QED phenomena such as the discovery of a nonlinear response of the quantum vacuum to macroscopic electromagnetic fields can become accessible. In addition, such laser systems provide for a flexible tool for investigating fundamental physics. Primary goals consist in verifying so far unobserved QED phenomena. Moreover, strong-field experiments can search for new light but weakly interacting degrees of freedom and are thus complementary to accelerator-driven experiments. I review recent developments in this field, focusing on photon experiments in strong electromagnetic fields. The interaction of particle-physics candidates with photons and external fields can be parameterized by low-energy effective actions and typically predict characteristic optical signatures. I perform first estimates of the accessible ...
2008-01-01
Numerical Algorithms for Two-Dimensional Dry Granular Flow with Deformable Elastic Grain
Energy Technology Data Exchange (ETDEWEB)
The authors consider the dynamics of interacting elastic disks in the plane. This is an experimentally realizable two-dimensional model of dry granular flow where the stresses can be visualized using the photoelastic effect. As the elastic disks move in a vacuum, they interact through collisions with each other and with the surrounding geometry. Because of the finite propagation speed of deformations inside each grain it can be difficult to capture computationally even simple experiments involving just a few interacting grains. The goal of this project is to improve our ability to simulate dense granular flow in complex geometry. They begin this process by reviewing some past work, how they can improve upon previous work. the focus of this project is on capturing the elastic dynamics of each grain in an approximate, computationally tractable, model that can be coupled to a molecular dynamics scheme.
2005-08-11
Ion-radiation hardening of magnesium oxide crystals
International Nuclear Information System (INIS)
Consideration is given to the data, demonstrating the effect of ion radiation on strength characteristics of ionic crystals, presented by magnesium oxide. Crystals, prepared in the form of plates, were irradiated by Si"+, Fe"+, C"+ ions by the dose of 10"1"6-10"1"7 ion/cm"2 at room temperature in vacuum. The following characteristics were investigated: dislocation density, microhardness, crack resistance. Investigation of dislocation structure showed, that dislocation density in irradiated sample was 2-3 times higher, as compared to nonirradiated one. Sufficient increase of fracture viscosity of MgO crystals was revealed. It can be conditioned by occurrence of compression stresses in the surface layer, decelerating crack formation and propagation.
Fundamental limits on beam stability at the advanced photon source
International Nuclear Information System (INIS)
Orbit correction is now routinely performed at the few-micron level in the Advanced Photon Source (APS) storage ring. Three diagnostics are presently in use to measure and control both AC and DC orbit motions: broad-band turn-by-turn rf beam position monitors (BPMs), narrow-band switched heterodyne receivers, and photoemission-style x-ray beam position monitors. Each type of diagnostic has its own set of systematic error effects that place limits on the ultimate pointing stability of x-ray beams supplied to users at the APS. Limiting sources of beam motion at present are magnet power supply noise, girder vibration, and thermal timescale vacuum chamber and girder motion. This paper will investigate the present limitations on orbit correction, and will delve into the upgrades necessary to achieve true sub-micron beam stability.
1998-12-10
International Nuclear Information System (INIS)
The loss of seal of the H9 channel in vacuum, freeing the entire cross section of the front part, leads to a fast leak that progresses rapidly. The effect of depressurizing the reflector can leads to shutdown of the shutdown rod pumps. The source changer associated with the channel fills completely before the valve closes. All of the leak water remains contained within the source changer containment. After the valves open, cooling of the fuel element is handled by natural convection, requiring a reversal of the flow between the plates. This changeover, which takes place at a relatively low pressure level, could lead to local boiling in the fuel element. Consequently, irreversible transformations cannot be excluded as possibilities for the fuel element and even for the control rod. Subsequently, the can is refilled with heavy water with establishment of the usual pressure levels.
Experimental modelling of thermal consolidation effects around a high level waste repository
International Nuclear Information System (INIS)
This report summarizes the results of a research programme which involves the development of a laboratory experimental facility for the simulation and study of hydro-thermo-mechanical processes in saturated geomaterials with low permeability. The experimentation involves a synthetic cement based porous material made of cement grout which possesses permeabilities in the range of dense unfractured sandstones or shale. Specially manufactured pore-pressure transducers were installed within the cylindrical block at locations adjacent to a plane free boundary. The block was saturated with the periodic application of a vacuum. In its saturated state the plane boundary of the block was subjected to heating via a circular heater the temperature of which was maintained constant. The resulting pore pressure generation along with temperature at these locations was monitored continuously. The results of a series of experiments are documented and further extensions to the ...
Effect on substrate-film adherence of TiN film enhanced plasma nitriding
International Nuclear Information System (INIS)
The combined process of low temperature plasma nitriding and TiN film deposition was realized on the plasma-assisted vacuum arc plating set. The process of plasma nitriding can be done below 200 degree C. The low temperature plasma nitriding and TiN film deposition was realized on the same device. By the SEM analysis of the plating structure, low hardness grads from the substrate to the film was obtained, and it was found that the mixed nitride plating formed at the interface between the substrate and the film. The quantitative measurement of substrate-film adherence showed that the adherence was improved notably by using the process. The adherence between film and substrate can reach to 59.6 MPa without the bias voltage supplying
2002-01-01
Development of the SSC (Superconducting Super Collider) trim coil beam tube assembly
Energy Technology Data Exchange (ETDEWEB)
The Superconducting Super Collider uses approx. =9600 dipole magnets. The magnets have been carefully designed to exhibit minimal magnetic field harmonics. However, because of superconductor magnetization effects, iron saturation and conductor/coil positioning errors, certain harmonic errors are possible and must be corrected by use of multipole correctors called trim coils. For the most efficient use of axial space in the magnet, and lowest possible current, a distributed internal correction coil design is planned. The trim coil assembly is secured to the beam tube, a uhv tube with special strength, size, conductivity and vacuum. The report details the SSC trim coil/beam tube assembly specifications, history, and ongoing development.
1987-01-01
Conceptual design of a low-temperature radiation-hard tracker detector
Silicon sensors have about ten times improved radiation hardness around 130 K temperature, compared with the state-of-art sensors close to room temperature. This is based on the Lazarus effect studied by the RD39 Collaboration of CERN. Other benefits of low temperatures will also be discussed. We shall describe the conceptual design of low-mass detector modules cooled using two-phase flow of argon in miniature cooling pipes integrated in the module structure between the sensors and the readout hybrid circuit. The main engineering features of the cooling system and mechanical support structures are discussed, as well as the benefits arising from the operation of the tracker under cryogenic vacuum. 4 Refs.
2003-01-01
Characterization of focused-ion-beam-induced damage in n-type silicon using Schottky contact
International Nuclear Information System (INIS)
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.
2006-04-10
Boring of full scale deposition holes using a novel dry blind boring method
Energy Technology Data Exchange (ETDEWEB)
Three holes the size of deposition holes (depth 7.5 m and diameter 1.5 m) were bored in the Research Tunnel at Olkiluoto, Finland. A novel full-face boring technique was used based on rotary crushing of rock and removal of crushed rock by vacuum flushing through the drill string. The purpose of the work was to demonstrate the feasibility of the technique. During the boring test procedures were carried out in order to determine the effect of changes in operating parameters on the performance of the boring machine and the quality of the hole. The boring method was found to be technically feasible and efficient. Evaluation of the quality of the hole included studies of the geometry of the hole, measurements of the surface roughness using a laser profilometer and study of excavation disturbances in the zone adjacent to the surface of the holes using two novel methods, He-gas diffusion and the {sup 14}C-polymethylmethacrylate methods. 43 refs.
1996-10-01
Energy Technology Data Exchange (ETDEWEB)
Cold deformation of YBa{sub 2}Cu{sub 3}O{sub 7-x}(phase 123, T{sub c} = 88.5-92 K) powders and strips causes partial decomposition of the 123 phase, a reduction in the degree of orthorhombicity of the structure up to almost complete degradation, and a decrease in T{sub c}. When they are deformed, yttrium high temperature superconductors acquire basal (001) (110) texture with high pole density (13-15 arbitrary units), low scattering angle ({+-} 6deg--7deg from the normal direction), and a weak preference for a, b or a + b in the rolling direction; traces of (139) orientations may also be found. This texture is known to be favourable for increasing j{sub k}. The combined effect of cold deformation and a carbon-containing binder leads, however, to a complete loss of superconductivity at 77 K or above. Depending on the regime of subsequent annealing, the following effects may be observed: degradation of the orthorhombic ...
1991-09-20
Annealing behavior of radiation damages in metal-silicides
International Nuclear Information System (INIS)
The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).
A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)
International Nuclear Information System (INIS)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. The relations of the enhanced diffusion to residual defects and lattice restoration have been studied in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150 deg C (or 1050 deg C) for 1s. The defect density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Allmost a 'complete' annealing of displacemet damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150 deg C in the time ranging from 12 to 20s. the mechanism of lattice ...
Energy Technology Data Exchange (ETDEWEB)
Heat transfer through the gas diffusion layer (GDL) is a key process in the design and operation of a PEM fuel cell. The analysis of this process requires determination of the effective thermal conductivity as well as the thermal contact resistance associated with the interface between the GDL and adjacent surfaces/layers. In the present study, a custom-made test bed that allows the separation of effective thermal conductivity and thermal contact resistance in GDLs under vacuum and ambient conditions is described. Measurements under varying compressive loads are performed using Toray carbon paper samples with a porosity of 78% for a range of thicknesses. The measurements are complemented by compact analytical models that achieve good agreement with experimental data. A key finding is that thermal contact resistance is the dominant component of the total thermal resistance; neglecting this phenomenon may result in ...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Tar sand bitumen is petroleum-based ultra-heavy oil, and has a great amount of reserve like coal. However, there are still a lot of problems for its highly effective utilization. This paper discusses whether the light components in bitumen show independent behavior during the thermal cracking of heavy components, or not. Solvent effect and reaction mechanism during the thermal cracking are also derived from the change of their chemical structures. Athabasca tar sand bitumen was separated into light and heavy fractions by vacuum distillation based on D-1660 of ASTM. Mixtures of the both fractions at various ratios were used as samples. Negative effect of the light fraction on cracking of the heavy fraction was observed with dealkylation and paraffin formation Polymerization of the dealkylated light fraction to the heavy fraction was suggested due to lack of hydrogen in the thermal cracking under nitrogen ...
1996-10-28
Methods for evaluating long-term changes in thermal resistance of vacuum insulation panels
Energy Technology Data Exchange (ETDEWEB)
Vacuum insulation panels (VIP) offer excellent thermal resistance properties that can enhance the energy efficiency of insulating systems, save space and contribute to energy consumption reductions. However, VIPs are not used much in Canada, and new commitments to carbon dioxide reductions has created the need to study the prospect of using VIPs in various components of a building envelope. For that reason, assessment methods for the applicability and sustainability of VIPs for use in building envelope construction were developed. There are practical aspects regarding the long-term performance and application of VIPs in building construction. Air molecules and water molecules can permeate through the foil and seams of the VIPs, causing a reduction in thermal resistance. This paper addresses some of the test methods that may accelerate long term changes in thermal resistance. Results were presented from tests using elevated pressure, relative humidity and ...
2005-07-01
Annealing, lattice disorder and non-Fermi liquid behavior in UCu4Pd
Energy Technology Data Exchange (ETDEWEB)
The magnetic and electronic properties of non-Fermi liquid UCu{sub 4Pd} depend on annealing conditions. Local structural changes due to this annealing are reported from UL{sub III}- and Pd K-edge x-ray absorption fine-structure measurements. In particular, annealing decreases the fraction of Pd atoms on nominally Cu 16e sites and the U-Cu pair-distance distribution width. This study provides quantitative information on the amount of disorder in UCu{sub 4Pd} and allows an assessment of its possible importance to the observed non-Fermi liquid behavior.
2002-07-30
Radiation-annealing hardening of vanadium
International Nuclear Information System (INIS)
Mechanical properties of vanadium, irradiated with fast neutrons up to 8.6x10"-"4 dpa depending on postirradiation annealing temperature, are studied. It is shown that radiation-annealing hardening (RAH) is observed at 300 deg C, which agrees with earlier performed studies. It is first stated that RAH is accompanied by plasticity decrease. Phenomenological model permitting to explain RAH dependence on irradiation temperature and dose and also on content of chemically active alloying impurities is suggested.
A cryostat is described that was developed for irradiating a number of small metal specimens with a high beamcurrent of heavy particles at liquid nitrogen temperature. The specimens, which are mounted on a block, are taken out of the cryostat after irradiation and subsequently annealed in a temperature bath. The progress of annealing is followed by measuring the change in electrical resistivity of the specimens in liquid helium. (auth)
1964-01-01
vehicles including the H2-A rocket and the space shuttle. .... The vacuum can's main function is to provide a high vacuum so that the science experiment and its sensors ... EMI-shielded power conversion from the incoming ISS power supply. 4. ...
Yttrium Oxides in Vacuum-Plasma-Sprayed CoNiCrAlY ...
... Accession Number : ADD141533. Title : Yttrium Oxides in Vacuum-Plasma- Sprayed CoNiCrAlY Coatings,. Descriptive Note : Journal Article,. ...
1989-06-01
Impurity and clustering effects on defect evolution in ion-implanted Si
Energy Technology Data Exchange (ETDEWEB)
A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an interstitial excess directly resulting from the extra implanted ion is shown to ...
1998-10-01
Effects of gamma-irradiation on the TL characteristics of pre-annealed natural ZrSiO{sub 4}
Energy Technology Data Exchange (ETDEWEB)
By the use of thermoluminescence (TL) technique we have investigated the effects of gamma irradiation on the TL response of pulverised natural zircon (ZrSiO{sub 4}) crystals from the Jos Plateau area of Nigeria. Samples of the mineral that have been previously annealed were artificially irradiated to moderate gamma doses ranging from 0.7 to 4.9 Gy using {sup 60}Co gamma-source of the CERD. The natural TL glow curve of the sample showed a broad peak around 250 deg. C, the peak was however, found to be completely erased following heat treatment for 2 h at 400 deg. C. The TL glow curves of the artificially irradiated samples showed two overlapping glow peaks at about 112 deg. C (peak I) and at 156 deg. C (peak II) within the dose range utilised. We note that the natural TL peak appears to be different from the two observed in the artificially irradiated sample. The TL response with dose was investigated for the two glow peaks found in the ...
2005-10-15
Effects of gamma-irradiation on the TL characteristics of pre-annealed natural ZrSiO_4
International Nuclear Information System (INIS)
By the use of thermoluminescence (TL) technique we have investigated the effects of gamma irradiation on the TL response of pulverised natural zircon (ZrSiO_4) crystals from the Jos Plateau area of Nigeria. Samples of the mineral that have been previously annealed were artificially irradiated to moderate gamma doses ranging from 0.7 to 4.9 Gy using "6"0Co gamma-source of the CERD. The natural TL glow curve of the sample showed a broad peak around 250 deg. C, the peak was however, found to be completely erased following heat treatment for 2 h at 400 deg. C. The TL glow curves of the artificially irradiated samples showed two overlapping glow peaks at about 112 deg. C (peak I) and at 156 deg. C (peak II) within the dose range utilised. We note that the natural TL peak appears to be different from the two observed in the artificially irradiated sample. The TL response with dose was investigated for the two glow peaks found in the artificially ...
2005-10-01
Energy Technology Data Exchange (ETDEWEB)
The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas ...
1997-11-07
Vacuum-plasma treatment induced modification of the surface of high-speed steel cutting tools
International Nuclear Information System (INIS)
The possibility of surface modification of high-speed steel cutting tool by means of vacuum-plasma treatment including ion nitriding in gas plasma followed by the deposition of wear resistant (Ti, Al)N coatings in metal-gas plasma of a vacuum arc discharge is studied. The regularities of nitrided layer formation and the structure of these layers under various operation conditions of cutting tool are investigated. Optimum conditions of vacuum-plasma treatment providing the best wear resistance of cutting are determined
Vacuum Packaging for Microelectromechanical Systems ...
... more than expected in developing a unique bond strength measurement protocol that is important for a wide range of bond strength measurements. ...
2002-10-01
International Science & Technology Center (ISTC)
Development of Method and Technical Project of the Plant for Thermo-Vacuum Desorption of Tritium Oxide (HTO) from the Environmental Samples
HIGH VOLTAGE BREAKDOWN STUDY. ADDENDUM: SOME ...
... The nature of the vacuum breakdown mechanism presents just such a problem and the relative significance or total absence of several processes ...
1968-10-01
A Procedure for the separation of sub-microgram quantities of lead and bismuth by vacuum evaporation
International Nuclear Information System (INIS)
... bismuth chlorides bismuth 207 cadmium chlorides efficiency evaporation high
Radiation hardening of diagnostics
International Nuclear Information System (INIS)
The world fusion program has advanced to the stage where it is appropriate to construct a number of devices for the purpose of burning DT fuel. In these next-generation experiments, the expected flux and fluence of 14 MeV neutrons and associated gamma rays will pose a significant challenge to the operation and diagnostics of the fusion device. Radiation effects include structural damage to materials such as vacuum windows and seals, modifications to electrical properties such as electrical conductivity and dielectric strength and impaired optical properties such as reduced transparency and luminescence of windows and fiber optics during irradiation. In preparation for construction and operation of these new facilities, the fusion diagnostics community needs to work with materials scientists to develop a better understanding of radiation effects, and to undertake a testing program aimed at developing workable solutions for ...
Fully quantized many-particle theory of a free-electron laser
Energy Technology Data Exchange (ETDEWEB)
A fully quantized many-particle theory of the standard free-electron laser in the small-signal, cold-beam regime is presented. The approach is based on an evaluation of the time-evolution operator in the interaction picture to first order in the quantum-mechanical recoil. For algebraic convenience we use the moving (Bambini-Renieri) frame, in which resonance occurs for zero electron momentum. Though we neglect space-charge effects, genuine many-particle contributions still show up, because the radiation emitted by one electron can be amplified by another electron. Our main results are gross features of the amplification, such as gain and spread, are virtually without many-particle effects. These effects are mainly important in the case of spontaneous emission. For a sufficiently high current, the buildup of the laser field from vacuum is enhanced by amplified spontaneous emission. Incoherence of the ...
1983-02-01
Vacuum system pump down analysis
Energy Technology Data Exchange (ETDEWEB)
My assignment on the SP-100 Vacuum Vessel Vacuum System Team was to perform a transient pump down analysis for the vacuum vessel that will house the SP-100 reactor during testing. Pump down time was calculated for air and helium. For all cases the proposed vacuum system will be able to pump down the vessel within the required time. The use of a larger rotary piston pump (DUO250) improves the pump down time by 35 minutes and therefore should be considered. The 6-inch duct for the roughing line is optimal, however, because all cases are well below the 24 hour time frame, the 4-inch duct is sufficient. The use of the single turbomolecular pump during pump down is sufficient. A pump down with helium in the vessel and a helium inleakage delays the time to achieve the base pressure marginally and is acceptable.
1990-08-01
Embedded systems for vacuum control at PEFP
International Nuclear Information System (INIS)
Development of a front end system for a high energy proton accelerator is in progress at Korea Atomic Energy Research Institute (KAERI) for basic science and industrial applications. The proper vacuum components has been installed and operated successfully between ion source and RFQ. The reliable operation of the accelerator has been completed at vacuum system in the high and ultra high vacuum range under operating conditions. Proper control system for the vacuum instruments, based on PC operated by Windows, has been designed and constructed by control group at PAL. As PC operated by windows with inherent instability does not proper, embedded system can be replaced for reliable operation system, such as VME system operated by vxWorks.
2005-05-26
The effects of energy non-monochromaticity of "1"1B ion beams on "1"1B diffusion
International Nuclear Information System (INIS)
We have shown that energy contamination introduced by ion beam deceleration technology that is used to increase the beam currents available for low energy boron implants, can affect fabricated junctions adversely. A 4 keV "1"1B beam is extracted and retarded by a potential of -3.5 keV for 0.5 keV "1"1B implantation, or by a potential of -3.8 keV for 0.2 keV "1"1B implantation. Intentional beam contamination was introduced by turning off the retarding potential to allow the 4 keV "1"1B ions to irradiate Si wafers directly. The percentage of contamination, at levels of 0.1%, 0.2% and 0.3% was introduced. Rapid thermal annealing of all the implanted samples was performed under N_2 ambient at 1050 deg. C for 1 s. The dopant tail profiles themselves are not significant if the contamination levels are low. However, the much higher damage level coming from high energy contamination increases the transient enhanced diffusion of "1"1B more than proportionately, resulting in ...
2005-08-01
Energy Technology Data Exchange (ETDEWEB)
Fuel irradiation leads to a swelling resulting from the formation of gaseous (Kr, Xe) or solid fission products which are found either in solution or as solid inclusions in the matrix. This phenomena has to be evaluated to be taken into account in fuel cladding Interaction. Fuel swelling was studied as a function of burn up by measuring the corresponding cell constant evolution by X-Ray diffraction. This study was realized on Mixed Oxide Fuels (MOX) irradiated in a Pressurized Water Reactor (PWR) at different burn-up for 3 initial Pu contents. Lattice parameter evolutions were followed as a function of burn-up for the irradiated fuel with and without an annealing thermal treatment. These experimental evolutions are compared to the theoretical evolutions calculated from the hard sphere model, using the fission product concentrations determined by the APPOLO computer code. Contribution of varying parameters influencing the unit cell value is discussed. Thermal ...
1995-07-01
Energy Technology Data Exchange (ETDEWEB)
Positron annihilation experiments on Fe-Cu model dilute alloys of nuclear reactor pressure vessel (RPV) steels have been performed after neutron irradiation in JMTR. Nanovoids whose inner surfaces were covered by Cu atoms were clearly observed. The nanovoids transformed to ultrafine Cu precipitates by dissociating their vacancies after annealing at around 400degC. The nanovoids and the ultrafine Cu precipitates are strongly suggested to be responsible for irradiation-induced embrittlement of RPV steels. Effects of Ni, Mn and P addition on the nanovoid and Cu precipitate formations were also studied. The nanovoid formation was enhanced by Ni and P, but suppressed by Mn. The Cu precipitates after annealing around 400degC were almost free from these doping elements and hence were pure Cu in the chemical composition. Furthermore the Fermi surface of the 'embedded' Cu precipitates with a body centered cubic ...
2003-03-01
Long-term optimization of fuel loading pattern using genetic algorithms and simulated annealing
International Nuclear Information System (INIS)
This paper describes Automatic Refueling Planning System (ARPS) for a nuclear power station using Genetic Algorithms (GA) and a Simulated Annealing (SA). ARPS has been developed and verified by applying to the Fugen nuclear power station (NPS), which is a 165MWe, heavy water-moderated, boiling light water-cooled, pressure tube-type reactor developed by JNC utilizing mainly uranium and plutonium mixed oxide (MOX) fuel. Fuel loading patterns have been managed independently in the Fugen NPS since the initial core. A planning of an adequate fuel loading pattern on each operational cycle needs one to two months even for expert core management engineers, for the reason that it has multi-objective optimization and nonlinear problems. In order to achieve the optimum fuel loading pattern and a fuel cost reduction, ARPS has been developed by JNC and CRC Solutions Corporation for the last five years. ARPS firstly generates several thousand fuel loading patterns with GA at ...
2003-04-20
Energy Technology Data Exchange (ETDEWEB)
This thesis is concerned with the crystallisation behaviour of polymers near to a free surface or a buried interface. The properties of polymers are expected to differ significantly near to an interface (either with air or another polymer), due to the contributions of (a) chain configurations induced at the interface, and (b) different mobilities between interfacial regions and the bulk of the sample. For a semi-crystalline polymer, properties such as the degree of crystallinity and the crystallisation kinetics may be enhanced near to a free surface. Grazing incidence x--ray diffraction (GIXD) is used to investigate such effects in poly(ethylene terphthalate) (PET), showing that a lower crystallisation temperature is obtained at the surface, and the crystallisation kinetics are faster at the surface for all temperatures. It is proposed that in thin films of PET, this surface-induced ordering provides nucleation sites for crystallisation in the bulk. GIXD is also ...
2002-07-01
Energy Technology Data Exchange (ETDEWEB)
Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO{sub 2}/SiO{sub x} /SiO{sub 2}/Si(100) stacked structure. The chemical composition of SiO{sub x} layer was controlled by changing the SiH{sub 4}, He, and O{sub 2} gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 10{sup 12} cm{sup -2} carriers are injected to or emitted from Si nanocrystals. The duration of 1 V shift in flatband voltage was {proportional_to}0.1 ms with 20 V pulse, and charged carriers were stably maintained for ...
2010-04-15
X-ray and UV-light irradiation effects on oxide superconducting thin films
International Nuclear Information System (INIS)
Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 by the irradiation. From these results we can find that ...
Energy Technology Data Exchange (ETDEWEB)
Using a series of polycations synthesized by atom transfer radical polymerization (ATRP), we investigate the effects of the polymer charge density and hydrophobicity on salt-induced interdiffusion of polymer layers within polyelectrolyte multilayer (PEM) films. Polycations with two distinct hydrophobicities and various quaternization degrees (QPDMA and QPDEA) were derived from parent polymers of matched molecular weights poly(2-(dimethylamino)ethyl methacrylate) (PDMA) and poly(2-(diethylamino)ethyl methacrylate) (PDEA) by quaternization with either methyl or ethyl sulfate. Multilayers of these polycations with polystyrene sulfonate (PSS) were assembled in low-salt conditions, and annealed in NaCl solutions to induce layer intermixing. As revealed by neutron reflectometry (NR), polycations with lower charge density resulted in a faster decay of film structure with distance from the substrate. Interestingly, when comparing polymer mobility in ...
2011-01-01
Irradiation-effects considerations for the SP-100 space reactor
International Nuclear Information System (INIS)
The Sp-100 reactor is a lithium-cooled high-temperature fast-spectrum reactor. The fuel is UN. The cladding is fabricated from PWC-11, a Nb alloy, as are all the primary structural components. A reactor lifetime of up to ten years with an operating temperature of 1370 K is required. The accumulated fluence is expected to be 6 x10"2"2 n/cm"2. The damage, which could result in swelling or embrittlement, anneals out as fast as it occurs for the majority of the structure. This has been confirmed by earlier radiation testing. A number of components, however, are exposed to lower temperatures and the reactor design and materials selection for these components must take this into consideration. Radiation effects must also be considered for the UN fuel, bearing materials, etc. To data an instrumented experiment, MOTO 1000A, has been conducted in the FFTF reactor and as uninstrumented experiment SPM-1 in the EBR-II reactor. In this paper the ...
1992-03-01
Energy Technology Data Exchange (ETDEWEB)
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the ...
2005-01-01
International Nuclear Information System (INIS)
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated ...
2005-01-01
International Nuclear Information System (INIS)
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A 'blue'-shift of PL spectrum from the SiO_2 films implanted with Si"+ ions to total dose of 1.2x10"1"7 cm"-"2 with increase in hydrostatic pressure was observed. For the films implanted with Si"+ions to a total dose of 4.8x10"1"6 cm"-"2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)
2001-09-23
Energy Technology Data Exchange (ETDEWEB)
We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO{sub 2} interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-{mu}m device characteristics, such as V{sub th} and I{sub dsat}, for which the differences between ...
2005-02-15
International Nuclear Information System (INIS)
We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO_2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-#mu#m device characteristics, such as V_t_h and I_d_s_a_t, for which the differences between simulation and ...
2005-02-01
REQUIREMENTS AND GUIDELINES FOR NSLS EXPERIMENTAL BEAM LINE VACUUM SYSTEMS-REVISION B.
Energy Technology Data Exchange (ETDEWEB)
Typical beam lines are comprised of an assembly of vacuum valves and shutters referred to as a ''front end'', optical elements to monochromatize, focus and split the photon beam, and an experimental area where a target sample is placed into the photon beam and data from the interaction is detected and recorded. Windows are used to separate sections of beam lines that are not compatible with storage ring ultra high vacuum. Some experimental beam lines share a common vacuum with storage rings. Sections of beam lines are only allowed to vent up to atmospheric pressure using pure nitrogen gas after a vacuum barrier is established to protect ring vacuum. The front end may only be bled up when there is no current in the machine. This is especially true on the VUV storage ring where for most experiments, windows are not used. For the shorter wavelength, ...
1999-05-01
K beta X-ray transition energies of M-shell-ionized ions of Ti through Ni in a plasma
Energy Technology Data Exchange (ETDEWEB)
K beta X-ray lines from partially M-shell-ionized ions of titanium through nickel which are produced in vacuum-spark plasmas have been observed systematically for the first time, using a high-resolution curved-crystal spectrometer. Each K beta line is clearly separated into its corresponding charge state. As a result, it is possible to measure the K beta-type transition energies of the M-shell-ionized ions. The transition energies accurately determined are compared with those calculated for iron ions, and the agreement is excellent except for ions having some additional 3d outer-shell electrons or 3s inner-shell vacancies. The square root of the K beta transition frequency is expressed as a linear function of the nuclear charge for isoelectronic sequences. The effective nuclear charges have been also determined for each K beta transition. The 3p electrons do not affect the effective nuclear charges. 10 references.
1985-05-01
IN VACUUM UNDULATOR TASK FORCE REPORT
Energy Technology Data Exchange (ETDEWEB)
The Green-Chasman lattice, which is the basis for both NSLS storage rings, was conceived with insertion devices in mind. Long, field-free straight sections were provided in the design. The electron optics were chosen so that these sections had zero dispersion and the effects of new magnetic structures placed in these regions would have minimal effect on the emittance of the electron beam. This design concept has been followed by all high-brightness rings which were built subsequent to the NSLS. The X-Ray Ring straight sections also have a very small vertical {beta} function, in addition to the zero dispersion. This was done to optimize the brightness of wiggler sources. There is a further benefit however. The {beta} function determines the beam size and divergence at a particular point in the storage ring lattice. The size is proportional to {radical}{beta} and the divergence is proportional to 1/{radical}{beta}. Thus the electron beam is very ...
1998-06-01
Hydrogen behavior in the iron surface layer modified by plasma nitriding and ion boronising
Energy Technology Data Exchange (ETDEWEB)
The effects of the plasma nitriding with the formation of compound nitride and diffusion zones and of the boronising with the different ion doses on hydrogen distribution and hydrogen induced deterioration of a surface layer were examined in the case of Armco iron. Electrochemical studies of hydrogen permeation rate, hydrogen vacuum extraction measurements, optical and scanning microscopy, X-ray diffraction and elastic recoil detection analysis (ERDA) were used. Accumulation of entering hydrogen within the various constituent zones of the modified layer inhibits the hydrogen transport into the metal and thus, decreases the mean hydrogen content in the deeper zones and in the core. Hydrogen accumulation within the compact nitride zone causes the expansion of the nitride lattice, nitride phase transformation and deterioration. The ion boronising enhances the hydrogen effects in the plasma nitrided layers. Therefore, ...
2000-12-01
Holography of a Composite Inflaton
We study the time evolution of a brane construction that is holographically dual to a strongly coupled gauge theory that dynamically breaks a global symmetry through the generation of an effective composite Higgs vev. The D3/D7 system with a background magnetic field or non-trivial gauge coupling (dilaton) profile displays the symmetry breaking. We study motion of the D7 brane in the background of the D3 branes. For small field inflation in the field theory the effective Higgs vev rolls from zero to the true vacuum value. We study what phenomenological dilaton profile generates the slow rolling needed, hence learning how the strongly coupled gauge theory's coupling must run. We note that evolution of our configuration in the holographic direction, representing the phyiscs of the strong interactions, can provide additional slowing of the roll time. Inflation seems to be favoured if the coupling changes by only a small amount ...
2010-01-01
High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix
Energy Technology Data Exchange (ETDEWEB)
The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3{times}10{sup {minus}5} Pa (10{sup {minus}7} torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T{sub m} is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had ...
1991-01-01
High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix
International Nuclear Information System (INIS)
The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3x10"-"5 Pa (10"-"7 torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T_m is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had good agreement with the ...
1991-01-06
British Library Electronic Table of Contents (United Kingdom)
The nanocomposite WC-Co powders were prepared through planetary ball milling method. Effects of grain growth inhibitor addition and the vacuum sintering parameters on the microstructure and properties of ultrafine WC-10Co cemented carbides were investigated using X-ray diffractometer, scanning electron microscope and mechanical property tester. The results show that VC and NbC additions can refine the WC grains, decrease the volume fraction of Co3W3C phase in ultrafine WC-10Co cemented carbides, and increase the hardness and fracture toughness of the base alloys. After sintering for 60 min at 1400 degreeC, the average grain size and hardness of ultrafine-grained WC-10Co-1VC cemented carbide are 470 nm and HRA 91.5, respectively. The fracture toughness of cemented carbide WC-10Co-1NbC alloy...
2009-01-01
Thermal release of volatile fission products from irradiated nuclear fuel
International Nuclear Information System (INIS)
An effective procedure for removing _3H, Xe and Kr from irradiated fuels was demonstrated using Shippingport UO"2 fuel. The release characteristics of _3H, Kr, Xe, and I from irradiated nuclear fuel have been determined as a function of temperature and gaseous environment. Vacuum outgassing and a flowing gas stream have been used to vary the gaseous environment. Vacuum outgassing released about 99% of the _3H and 20% of both Kr and Xe within a 3 h at 1500_0C. Similar results were obtained using a carrier gas of He containing 6% H"2. However, a carrier gas containing only He resulted in the release of approximately 80% of the _3H and 99% of both Kr and Xe. These results indicate that the release of these volatile fission products from irradiated nuclear fuel is a function of the chemical composition of the gaseous environment. The rate of tritium release increased with increasing temperature (1100 to 1500_0C) and with the ...
Energy Technology Data Exchange (ETDEWEB)
The microbiological safety, refrigeration shelf-life, and nutritional quality of chicken breast meat were investigated following combined electron-beam irradiation and cooking under vacuum (sous-vide). Chicken breast meat inoculated with 10{sup 6} CFU/g of Listeria monocytogenes was irradiated with an electron beam at doses up to 3.1 kGy under vacuum in barrier bags, cooked in a boiling water bath for 3 min 45 s (previously determined to achieve an internal temperature of 71.1{sup o}C), and stored at 8{sup o}C for up to 5 weeks. Listeria was undetectable in samples treated with combined sous-vide and irradiation at 3.1 kGy, but the organism survived the sous-vide treatment without irradiation and multiplied during storage. A similar study, conducted with uninoculated chicken breast meat, revealed that the product which received both irradiation (3 kGy) and sous-vide treatment had a shelf-life of at least 8 weeks at 8{sup o}C, whereas the ...
1994-07-01
Effective stress of a 4.2 K beam tube in a quenching collider 50 mm dipole magnet for the SSC
Energy Technology Data Exchange (ETDEWEB)
Two mechanical design requirements are defined for the SSC Collider beam tube. First, the vacuum requirement (luminosity lifetime = 150 hrs). It requires the design of a pressure boundary within the cold mass vessel to provide a vacuum tunnel for the proton beam and to minimize the synchrotron radiation gas desorbtion with a suitable material. The Collider beam tube design is under an intensive activity to search for a material that will meet the luminosity requirement without a distributed pump or liner. Second is the tube wall`s resistivity requirement ({sigma}*t = 2E5 {Omega}{sup {minus}1}). For a 4.2 K beam tube the Cu thickness is 100 {mu}m (RRR=30,6.7 T, {sigma}=2E9{Omega}{sup {minus}1}m{sup {minus}1}). The copper yield strength is relatively low in comparison to steel and, therefore, the design of the steel layer is governed by the copper layer yield stress limit. A beam tube subjected to eddy current load in a quenching dipole requires ...
1993-05-01
Effective stress of a 4. 2 K beam tube in a quenching collider 50 mm dipole magnet for the SSC
Energy Technology Data Exchange (ETDEWEB)
Two mechanical design requirements are defined for the SSC Collider beam tube. First, the vacuum requirement (luminosity lifetime = 150 hrs). It requires the design of a pressure boundary within the cold mass vessel to provide a vacuum tunnel for the proton beam and to minimize the synchrotron radiation gas desorbtion with a suitable material. The Collider beam tube design is under an intensive activity to search for a material that will meet the luminosity requirement without a distributed pump or liner. Second is the tube wall's resistivity requirement ([sigma]*t = 2E5 [Omega][sup [minus]1]). For a 4.2 K beam tube the Cu thickness is 100 [mu]m (RRR=30,6.7 T, [sigma]=2E9[Omega][sup [minus]1]m[sup [minus]1]). The copper yield strength is relatively low in comparison to steel and, therefore, the design of the steel layer is governed by the copper layer yield stress limit. A beam tube subjected to eddy current load in a quenching dipole ...
1993-05-01
Thermal effect on superhydrophobic performance of stearic acid modified ZnO nanotowers
Energy Technology Data Exchange (ETDEWEB)
The thermal desorption of stearic acid on superhydrophobic zinc oxide nanotowers has been investigated. The stearic acid passivated zinc oxide nanotowers provide a very high contact angle of {approx}173 {+-} 1.1 deg. with a very low hysteresis of {approx}1.4 {+-} 0.5 deg. due to the presence of a binary structure composed of several nanosteps on each nanotower of height {approx}700 nm that eventually reduces the area of contact between the drop and the nanotowers and trapping more air as revealed by the field emission scanning electron microscopy images. The superhydrophobic performance of these nanotowers, however, declines following annealing at elevated temperatures. Fourier transform infrared spectra show a reduction in the intensity of stearic acid -CH{sub n} peaks at elevated temperatures revealing the cause of the decrease in contact angle and confirming the occurrence of thermal desorption at 184 deg. C. The corresponding activation energy for desorption ...
2008-02-28
British Library Electronic Table of Contents (United Kingdom)
Here in the present paper, we report on growth of stoichiometric and nonstoichiometric nanostructured heterojunction solar cell of CdS/CuInSXSe2-X varying X from 0 to 2 in the interval of 0.5 using cost effective, simple, chemical ion exchange method at room temperature on ITO glass substrate. The as-grown varying composition solar cells annealed at 200degreeC in air and characterized for structural, compositional, optical and illumination studies. The X-ray diffraction pattern obtained from CdS/CuInSXSe2-X solar cell confirms the formation of CuInSe2, CuInS0.5Se1.5, CuInS1Se1, CuInS1.5Se0.5 and CuInS2 phases having tetragonal structure with varying crystallite size from 19, 19.37, 28, 33 and 20nm respectively. The energy dispersive X-ray analysis (EDAX) confirms the expected elemental com...
2011-01-01
Radiation hardening of final optics for an ICF reactor
International Nuclear Information System (INIS)
Radiation damage of the final optical components in an Inertial Confinement Fusion (ICF) reactor is a crucial issue for development of a laser-fusion reactor. To some extent, this problem will be encountered in the National Ignition Facility (NIF), but there, the integrated radiation dose will be considerably less than that encountered in a future reactor. This extremely harsh radiation environment necessitates shielding the ICF optics from direct neutron and x-ray bombardment. Several approaches have been suggested, such as the use of grazing incidence metal mirrors or fused silica wedge deflectors. While metal mirrors can withstand a larger radiation dose, their focusing qualities pose problems. Therefore wedge deflectors, originally suggested by Lawrence Livermore National Laboratory (LLNL) staff, represent a promising alternative. Radiation hardening of the fused silica deflectors using a new combined thermal/optical annealing approach is examined here as a ...
1995-04-24
Pitting corrosion of Alloy 690 in thiosulfate-containing chloride solutions
Energy Technology Data Exchange (ETDEWEB)
The effects of thiosulfate ion and solution pH on pitting corrosion of Alloy 690 in chloride solution were explored. Potentiodynamic polarization measurements were conducted to evaluate pitting corrosion susceptibility of Alloy 690 in these environments. The results showed that pitting corrosion occurred in the mill-annealed (1050 deg. C/5min) Alloy 690 in 1 wt% NaCl solution but not in 0.1 M Na{sub 2}S{sub 2}O{sub 3} solution. The value of pitting nucleation potential (E{sub np}) determined in 1 wt% NaCl solution (without Na{sub 2}S{sub 2}O{sub 3} ) increased with increasing solution pH value in the range of 2-10. The addition of Na{sub 2}S{sub 2}O{sub 3} to 1 wt% NaCl solution greatly affected the pitting corrosion behavior, which was dependent on concentration. The preformed nickel sulfide surface film due to the presence of Na{sub 2}S{sub 2}O{sub 3} caused Alloy 690 to become more susceptible to pitting corrosion in 1 wt% NaCl solution.
2000-02-01
British Library Electronic Table of Contents (United Kingdom)
Herein, we report engineering of nanostructured p-CuIn3Se5/n-CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu^+, In^3^+ and Se^2^- ions in alkaline medium. The uniform deposition of heterojunction thin films is achieved by optimizing the pH, temperature and molarity of the reactant bath. The as-deposited thin-films were annealed at 200^oC in air for 1h and further characterized for structural, optical and electrical properties using UV-Vis spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Hall effect for type of conductivity, and I-V measurement to investigate the char...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Fe-Ni-Mn martensitic steels are one of the major groups of ultra-high strength steels that have good mechanical properties and ductility in as annealed condition but they suffer from severe inter-granular embitterment after aging. In this paper, the effect of heavy shaped cold rolling and wire drawing on the mechanical properties of Fe-Ni-Mn steel was investigated. This process could provide a large strain deformation in this alloy. The total strain was {epsilon} {approx}7. Aging behavior and tensile properties of Fe-10Ni-7Mn were studied after aging at 753 K. The results showed that the ultimate tensile strength and ductility after cold rolling, wire drawing and aging increased up to 2540 MPa and 7.1 %, respectively, while the conventional steels show a premature fracture stress of 830 MPa with about zero ductility after aging.
2010-07-01
International Nuclear Information System (INIS)
Fe-Ni-Mn martensitic steels are one of the major groups of ultra-high strength steels that have good mechanical properties and ductility in as annealed condition but they suffer from severe inter-granular embitterment after aging. In this paper, the effect of heavy shaped cold rolling and wire drawing on the mechanical properties of Fe-Ni-Mn steel was investigated. This process could provide a large strain deformation in this alloy. The total strain was #epsilon# #approx#7. Aging behavior and tensile properties of Fe-10Ni-7Mn were studied after aging at 753 K. The results showed that the ultimate tensile strength and ductility after cold rolling, wire drawing and aging increased up to 2540 MPa and 7.1 %, respectively, while the conventional steels show a premature fracture stress of 830 MPa with about zero ductility after aging.
2010-07-01
Fused Silica Final Optics for Inertial Fusion Energy: Radiation Studies and System-Level Analysis
International Nuclear Information System (INIS)
The survivability of the final optic, which must sit in the line of sight of high-energy neutrons and gamma rays, is a key issue for any laser-driven inertial fusion energy (IFE) concept. Previous work has concentrated on the use of reflective optics. Here, we introduce and analyze the use of a transmissive final optic for the IFE application. Our experimental work has been conducted at a range of doses and dose rates, including those comparable to the conditions at the IFE final optic. The experimental work, in conjunction with detailed analysis, suggests that a thin, fused silica Fresnel lens may be an attractive option when used at a wavelength of 351 nm. Our measurements and molecular dynamics simulations provide convincing evidence that the radiation damage, which leads to optical absorption, not only saturates but that a 'radiation annealing' effect is observed. A system-level description is provided, including Fresnel lens and phase ...
2003-06-01
Energy Technology Data Exchange (ETDEWEB)
Enhanced superlattice disordering in nonstoichiometric AlAs/GaAs quantum wells exhibits weak temperature dependence because of the decay of the supersaturated concentration of group-III vacancies. We present a formalism for transient enhanced diffusion in nonstoichiometric materials with which we can extract migration enthalpies {ital H}{sub {ital m}} by assuming that the vacancy decay is thermally activated with an enthalpy {ital H}{sub {ital a}}. By analyzing the electroabsorption from the quantum-confined Stark effect for a set of isochronal and isothermal anneals, we extract a migration enthalpy {ital H}{sub {ital m}}=(1.8{plus_minus}0.2) eV for group-III vacancies, as well as an activation enthalpy {ital H}{sub {ital a}}=(0.7{plus_minus}0.2) eV for vacancy annihilation. {copyright} {ital 1996 American Institute of Physics.}
1996-07-01
Effects of interstitial clustering on transient enhanced diffusion of boron in silicon
Energy Technology Data Exchange (ETDEWEB)
A simulation model for boron diffusion which takes into account the aggregation of the excess interstitials in clusters, and subsequently, the dissolution of these defects, is proposed. The interstitial supersaturation and generation rate are determined according to the classical theory of nucleation and growth of particles, in analogy with the precipitation of a new phase in heavily doped silicon. The clusters are considered as precipitates formed by interstitial Si atoms. The B diffusion is modelled on the basis of the dopant-interstitial pair diffusion mechanism. The clusters dissolution during annealing maintains nearly constant, for a long period, the interstitial supersaturation and the related enhancement of the boron diffusion. This gives a good account of the diffusion results over a large range of experimental conditions. Furthermore, this approach describes most of the behavior of the transient enhanced diffusion (TED), like the temperature dependence of ...
1997-11-01
Diffusion mechanism of implanted Be in GaAs
Energy Technology Data Exchange (ETDEWEB)
The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of temperature, have been ...
2008-01-15
Creep ductility to failure of Alloy 800
International Nuclear Information System (INIS)
Research is in progress to obtain a satisfactory creep ductility for alloy 800 when used as heat exchanger material in sodium-cooled fast reactors (LMFBR). The creep test characteristics at present available show that a pronounced tendency to reduced elongation by creep failure may arise after prolonged testing in the 500-700 deg C temperature range. This phenomenon is now agreed to be primarily inherent to the conditions for Ni_3(Ti,Al) precipitation in the material and hence to the Ti and Al concentrations. By structural studies and hardness measurements on material subjected to creep tests and taken from a large number of castings, the relationship was established between the (Ti+Al) content and the structural hardness effect of Ni_3(Ti,Al) at 600 deg C. Below a certain Ti+Al concentration, no precipitation occurs and hence the creep ductility to failure can be improved considerably by limiting the allowed Ti+Al content in the material, though at the price of ...
Energy Technology Data Exchange (ETDEWEB)
Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. {copyright} {ital 1999 American Institute of Physics.}
1999-02-01
Affinity purification of sequence-specific DNA binding proteins.
We describe a method for affinity purification of sequence-specific DNA binding proteins that is fast and effective. Complementary chemically synthesized oligodeoxynucleotides that contain a recognition site for a sequence-specific DNA binding protein are annealed and ligated to give oligomers. This DNA is then covalently coupled to Sepharose CL-2B with cyanogen bromide to yield the affinity resin. A partially purified protein fraction is combined with competitor DNA and subsequently passed through the DNA-Sepharose resin. The desired sequence-specific DNA binding protein is purified because it preferentially binds to the recognition sites in the affinity resin rather than to the nonspecific competitor DNA in solution. For example, a protein fraction that is enriched for transcription factor Sp1 can be further purified 500- to 1000-fold by two sequential affinity chromatography steps to give Sp1 of an estimated 90% homogeneity with 30% yield. ...
1986-08-01
Randomization of heavily damaged regions in annealed low energy Ge{sup +}-implanted (0 0 1)Si
Energy Technology Data Exchange (ETDEWEB)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-15
Randomization of heavily damaged regions in annealed low energy Ge"+-implanted (0 0 1)Si
International Nuclear Information System (INIS)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-01
Nanostructure of Si-Ge near-surface layers produced by ion implantation and laser annealing
International Nuclear Information System (INIS)
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)
2001-09-23
International Nuclear Information System (INIS)
Formation of the soft magnetic nanostructure in amorphous Fe_1_4Ni_4_0Zr_7B_1_2 alloy due to heat treatment is studied by the Moessbauer, differential scanning calorimetry, and X-ray diffraction techniques. Annealing at temperatures 520-580 "oC leads to the formation of extremely soft nanocrystalline alloy as revealed by the rf-Moessbauer measurements. The superparamagnetic behaviour was observed for the alloy annealed at 620-640 "oC. At higher annealing temperatures good soft magnetic properties deteriorate. (author)
2001-09-23
Energy Technology Data Exchange (ETDEWEB)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1997-11-01
International Nuclear Information System (INIS)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1996-12-02
A new method for the analysis of infrared stimulated luminescence data from potassium feldspars
International Nuclear Information System (INIS)
A new method is described for the analysis of high precision pulse annealing data obtained using IRSL measurements on potassium feldspars using a Risoe reader. Presenting the data as the percentage of the signal lost per annealing phase permits more detailed comparisons to be made between samples. In addition, it is possible to directly compare the temperatures at which the TL and IRSL signals are released, thus giving information about the relationship between them. This method of analysis is applied to pulse annealing data for natural, irradiated, preheated and IR bleached aliquots. (author).
1993-07-01
Ultrashallow P{sup +}/N junction formation by plasma ion implantation
Energy Technology Data Exchange (ETDEWEB)
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel ...
2000-12-01
Ultrashallow P"+/N junction formation by plasma ion implantation
International Nuclear Information System (INIS)
We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...
2000-12-01
International Nuclear Information System (INIS)
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)
2011-07-01
International Nuclear Information System (INIS)
... kov (Ukraine) INIS-UA--158 488 p. MATERIALS SCIENCE annealing creep
2010-09-06
Influence of annealing on the microstructure of commercial Mg alloy AZ31 after mechanical forming
International Nuclear Information System (INIS)
The microstructure of commercial rolled magnesium alloy AZ31B (nominal composition Mg-3Al-0.9Zn-0.15Mn in wt.%) was investigated with the help of light microscopy, electron backscatter diffraction (EBSD) and X-ray diffraction technique after annealing in the temperature range from room temperature (RT) to 400 deg. C. Tensile tests at RT were performed to show the influence of the microstructure on mechanical properties. Static recrystallization (SRX) was observed during annealing of as-received alloy at and above 150 deg. C. Twins play an important role during SRX and serve as nucleation sites and preferred paths for growth of grains. The strong basal texture caused by rolling was weakened by SRX. Significant differences in the stress strain curves were observed for as-received and annealed specimens.
2006-09-25
Grain refinement on AZ31 magnesium alloy by highly strained and annealed method
Energy Technology Data Exchange (ETDEWEB)
Grain refinement in AZ31 magnesium alloy has been attempted by hot-rolling and annealing process. Specimens were solution heat treated at 673 K for 36 ks, then hot-rolled at 423-773 K with total reduction of 20-80% by multi pass process. The rolled specimens were annealed at 473-673 K for 3.6 ks. Grain sizes after the solution heat treatment were about 20 to 150 {mu}m. After hot-rolling at 573 K and annealing at 473 K, grain sizes decreased into about 5 to 10 {mu}m. Suppression of grain growth by pinning due to precipitates was observed by transmission electron microscopic observations. (orig.)
2004-07-01
Crystal Chemistry of Ceramic/Mineral Systems
... 1. Reeber, RR, Kusy, RP, Yu, N. and Chu, WK " Formation of a Solid Lubricant in Boron Carbide by Nitrogen Ion Implantation and Laser Annealing ...
1992-12-08
International Nuclear Information System (INIS)
Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).
8 - NASA Technical Reports Server
Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...
Supersymmetric renormalisation group fixed points and third generation fermion mass predictions
Energy Technology Data Exchange (ETDEWEB)
We present a supersymmetric renormalization group fixed point determination of the third generation fermion masses, in which the large mass ratio between the top and bottom quarks is attributed to a hierarchy in the vacuum expectation values of the two Higgs doublets. Above a supersymmetry breaking scale, M{sub s}, we use the minimal supersymmetric standard model with a transition at M{sub s} to the standard model with only one Higgs- doublet effective. The mass predictions result from renormalization group evolution of large Yukawa couplings at M{sub x} {approximately} 1016 GeV. Averaging over a wide range of these couplings, not subject to any symmetry requirements, gives m{sub t} = 184.3{plus_minus}6.8 GeV, m{sub b} = 4.07{plus_minus}0.33 GeV, m{sub {tau}} = 1.78{plus_minus}0.33 GeV and a light Higgs mass m{sub h}o = 121.8{plus_minus}4.3 GeV for M{sub s} = 1 TeV and {alpha}{sub s} (M{sub z}) = 0.125.
1992-09-01
Energy Technology Data Exchange (ETDEWEB)
This Progress Report describes the operation of the Los Alamos Meson Physics Facility (LAMPF) and the research programs carried out there for the years 1992 and 1993. The accelerator operated for over 100 days in 1992, providing beams of H{sup +}, H{sup {minus}}, and polarized H{sup {minus}} for a rich and varied research program in nuclear physics. The accelerator had only fair beam availability in 1992 (for example, the average H{sup +} beam availability was 72%), caused largely by problems in the 201-MHz rf system. A major effort was expended to address these problems before the 1993 run. These efforts were rewarded by good beam availability in 1993 and few problems with the 201-MHz system. LAMPF operated remarkably smoothly during 1993, in the midst of a period of great uncertainty in the future of the facility and the downsizing of MP Division, which led to the loss of a large number of key people to positions elsewhere in the Laboratory. The H{sup +} intensity had to be held to ...
1994-07-25
Energy Technology Data Exchange (ETDEWEB)
Plasma nitriding of a Ti substrate is carried out under a low ambient pressure below 3kPa, and a plasma torch is prepared on a trial basis which is provided with a supersonic expansion nozzle considered to expand plasma jet optimally and to be effective for suppressing the occurrence of shock wave. The system used for the study is provided with a specimen holder having the function of adjusting the distance between the nozzle outlet and the substrate inside the vacuum chamber which is provided with a plasma torch in the flange member. The plasma torch is so structured that a supersonic expansion nozzle can be installed at the tip of the plasma torch. In this process wherein plasma jet is employed, hard nitrided layer can be formed by plasma irradiation for a short time even under such low pressure as less than 3kPa by setting adequate experimental conditions. It is made clear that the use of a supersonic nozzle corresponding to the internal ...
1997-07-01
Energy Technology Data Exchange (ETDEWEB)
The metal dependence of mesoporous activated carbons with various metal acetylacetonate (acac) particles prepared from Morwell coal was studied. In experiment, the mixture of Morwell coal and acac metal complexes were dissipated into tetrahydrofuran, and after agitation in Ar atmosphere, the solvent was removed by vacuum distillation. Coal specimens with Fe(acac)3, Ni(acac)2 and Co(acac)2 as acac complexes were activated by exchanging flow gas with water vapor after heat treatment in N2 gas flow at 900{degree}C. The pore sizes of the specimens were obtained from N2 adsorption isotherms by BET method and BJH method. Conditions of pores and metals in the specimens were examined by XRD measurement and TEM observation. The relation between the above conditions and pore characteristics obtained from adsorption experiment was also examined. As a result, the difference in mesopore ratio between the specimens and blank specimens was larger in the order of Fe, Co and Ni, ...
1996-10-28
Intrapartum FHR monitoring and neonatal CT brain scan
Energy Technology Data Exchange (ETDEWEB)
The effect of fetal distress on the neonatal brain was investigated by neonatal CT brain scan, FHR monitoring and mode of delivery. This study involved 11 cases of full term vertex delivery in which FHR was recorded by fetal direct ECG during the second stage labor. All infants weighed 2,500 g or more. FHR monitoring was evaluated by Hon's classification. Neonatal brain edema was evaluated by cranial CT histgraphic analysis (Nakada's method). 1) Subdural hemorrhage was noted in 6 of 7 infants delivered by vacuum extraction or fundal pressure (Kristeller's method). 2) Intracranial hemorrhage was demonstrated in all of 3 infants with 5-min. Apgar score 7 or less. 3) Two cases with prolonged bradycardia and no variability had intraventricular or intracerebral hemorrhage which resulted in severe central nervous system damage. 4) The degree of neonatal brain edema correlated with 5-min. Apgar score. 5) One case with ...
1982-12-01
Intrapartum FHR monitoring and neonatal CT brain scan
International Nuclear Information System (INIS)
The effect of fetal distress on the neonatal brain was investigated by neonatal CT brain scan, FHR monitoring and mode of delivery. This study involved 11 cases of full term vertex delivery in which FHR was recorded by fetal direct ECG during the second stage labor. All infants weighed 2,500 g or more. FHR monitoring was evaluated by Hon's classification. Neonatal brain edema was evaluated by cranial CT histgraphic analysis (Nakada's method). 1) Subdural hemorrhage was noted in 6 of 7 infants delivered by vacuum extraction or fundal pressure (Kristeller's method). 2) Intracranial hemorrhage was demonstrated in all of 3 infants with 5-min. Apgar score 7 or less. 3) Two cases with prolonged bradycardia and no variability had intraventricular or intracerebral hemorrhage which resulted in severe central nervous system damage. 4) The degree of neonatal brain edema correlated with 5-min. Apgar score. 5) One case with prolonged bradycardia and no ...
1982-01-01
Development of a high performance air heater through use of an evacuated tube cover design
Development of a high performance air heater through use of an evacuated tube cover design is described. The cover design utilizes evacuated fluorescent light tubes laid parallel in a close packed array to form an inner transparent glazing over a conventional metal absorber plate with flow behind the plate. A tempered flat glass plate was used as an outer glazing. Both clear and infrared reflective (IR) tubes were investigated. Solar transmittance tests indicate that the clear tube array has a higher transmittance than two flat sheets of low-iron glass. The IR coating produced substantial transmittance loss. Thermal conductance tests indicate that the tubes behave similar to two flat glass sheets with a vacuum in between. The IR reflective coating was only marginally effective at reducing heat conductance. Final prototype designs are presented along with collector performance estimates.
1980-01-01
CuBr blue light emitting electroluminescent thin film devices
British Library Electronic Table of Contents (United Kingdom)
Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
In order to employ molecular dynamics (MD) methods, commonly used in condensed matter physics, we have derived the equations of motion for a beam of charged particles in the rotating rest frame of the reference particle. We include in the formalism that the particles are confined by the guiding and focusing magnetic fields, and that they are confined in a conducting vacuum pipe while interacting with each other via a Coulomb force. Numerical simulations using MD methods has been performed to obtain the equilibrium crystalline beam structure. The effect of the shearing force, centrifugal force, and azimuthal variation of the focusing strength are investigated. It is found that a constant gradient storage ring can not give a crystalline beam, but that an alternating-gradient (AG) structure can. In such a machine the ground state is, except for one-dimensional (1-D) crystals, time dependent. The ground state is a zero entropy state, despite the ...
1993-06-11
Consistency Improvement of some steel types by plasma nitriding
International Nuclear Information System (INIS)
Plasma nitriding is a powerful technique for modifying the phase-structure of the material surface layers, which affect the mechanical, physical and chemical properties of material. The effect of plasma nitriding on the surface properties of three types of steel (low carbon, AISI-304 and H13 (hardened)) has been investigated. The steel samples were plasma nitrided in vacuum of 10"-"1Pa with gas mixture of (N_2, H_2) at 530 Centigrade degree for a duration of 14 hours. Vickers microhardness measurements and XRD phase analysis of the treated and untreated samples were carried out. The diffraction patterns of treated steels revealed that new phases of #gamma#-Fe_4N, #epsilon#-Fe_3N and (Fe,Cr)_2N were formed. The maximum treated depths were about 5, 6 and 45 #mu#m for low carbon, AISI-304 and H13 (hardened) nitrided steel respectively. The microhardness was increased by about 150%, 200% and 140% for low carbon, AISI-304 and H13 nitrided samples ...
2004-12-04
Characterization of coatings and the low cycle fatigue behaviour of 316L
Energy Technology Data Exchange (ETDEWEB)
In the framework of the European Fusion Technology Programme ECN participates in a NET task PSM-8 `Coatings and Surface Effects on Stainless Steel 316L`. High emissivity coatings were developed for enhanced heat transfer from graphite tiles to a Stainless Steel First Wall. Four candidate materials, Cr{sub 2}O{sub 3}, Black Cr, Al{sub 2}O{sub 3}/TiO{sub 2} and TiC were tested as candidate high emissivity coatings. These coatings were manufactured by atmospheric and vacuum plasma spraying technique and the Black Chromium coatings were manufactured by a galvanic coating technique. The tests included total emissivity measurements and Low Cycle Fatigue (LCF) experiments. The total emissivity of two TiC coatings at 525 K appeared to be 0.62 and 0.64. The total emissivity of the TiC and 5 wt% TiO{sub 2}/Al{sub 2}O{sub 3} coating was about 0.7. (orig.)
1993-03-01
A cost effective battery bank for I sup 2 t testing and evaluation of electrical switchgear
Energy Technology Data Exchange (ETDEWEB)
This paper describes the electrical design and mechanical construction of a 50 kA step switched'' battery bank. Individual fuses protect each of the forty parallel isolated strings of three series (12 V) batteries. Step current waveforms of 12.5 kA, 25 kA, 37.5 kA, and 50 kA are produced by 8 sets of pneumatically driven 20 pole step switches and current limiting stainless steel trombone'' resistors. Inexpensive, yet conservatively designed, Group 65 Motorcraft car batteries are used to give an I{sup 2}t capability of better than 5 {times} 10{sup 9}. The battery bank has well over 1500 shots, with testing of commercial switchgear continuing. In addition to the battery bank engineering data, results of repetitive testing of vacuum interrupters at their I{sup 2}t limit will be provided. 8 figs.
1989-01-01
Solid state alkali metal-halogen cell
Energy Technology Data Exchange (ETDEWEB)
A solid electrolyte cell comprises an alkali metal anode, e.g. lithium, a halogen-containing organic polymer cathode and a solid elecrolyte between the anode and the cathode. The cathode comprises iodine-containing vacuum-cyclised polyacrylonitrile, and the solid electrolyte is preferably lithium iodide and halogen-free vacuum-cyclised polyacrylonitrile. This patent also discloses the use of isotactic polyacrylonitrile, a method of making a cathode comprising iodine-containing vacuum-cyclised polyacrylonitrile, and novel methods of making the solid elecrolyte cells described.
1988-04-26
Vacuum distillation refining and recycling of magnesium alloys
Energy Technology Data Exchange (ETDEWEB)
Purification parameters of the vacuum distillation process for AM50A and AZ31B magnesium alloy were studied. The vacuum distillation tests were kept at 580 C to 620 C up to 10 h under a vacuum pressure of about 1 Pa. The purification ratio for AM50A magnesium alloy increases with increasing the purification time. The chemical compositions of materials deposited purifying at 580 C for AM50A magnesium alloy almost satisfy the values for pure magnesium specified by JIS standard specification. The chemical compositions of deposited materials at 600 C for AZ31B magnesium alloy satisfy the values specified by the standard specification except for Zn. (orig.)
2003-07-01
Three generation vacuum oscillations and the solar neutrino problem
We investigate the solar neutrino problem in the scenario of three generation neutrino oscillation hypothesis, taking into account other phenomenological constraints to the neutrino mixing and mass parameters.
1994-01-01
British Library Electronic Table of Contents (United Kingdom)
Environmental scanning electron microscopy (ESEM) allows the examination of hydrated and dried specimens without a conductive metal coating which could be advantageous in the imaging of biological and medical objects. The aim of this study was to assess the performance and benefits of wet-mode and low vacuum ESEM in comparison to high vacuum scanning electron microscopy (SEM) using the choroid plexus of chicken embryos as a model, an organ of the brain involved in the formation of cerebrospinal fluid in vertebrates. Specimens were fixed with or without heavy metals and examined directly or after critical point drying with or without metal coating. For wet mode ESEM freshly excised specimens without any pre-treatment were also examined. Conventional high vacuum SEM revealed the characterist...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
A miniature x-ray source utilizing a hot filament cathode. The source has a millimeter scale size and is capable of producing broad spectrum x-ray emission over a wide range of x-ray energies. The miniature source consists of a compact vacuum tube assembly containing the hot filament cathode, an anode, a high voltage feedthru for delivering high voltage to the cathode, a getter for maintaining high vacuum, a connector for initial vacuum pump down and crimp-off, and a high voltage connection for attaching a compact high voltage cable to the high voltage feedthru. At least a portion of the vacuum tube wall is fabricated from highly x-ray transparent materials, such as sapphire, diamond, or boron nitride.
2000-01-01
British Library Electronic Table of Contents (United Kingdom)
This paper presents the results of the degree of irreversible changes of dielectric properties of vacuum circuit breakers with CuCr and CuBi contacts before and after short-circuit breaking operations. Tests of dielectric properties were performed on four different types of switching vacuum chamber with RMF electrodes in the form of a spiral disk with slots. The paper describes the configuration of measuring system for determining the dielectric properties of circuit breakers with DC, AC and pulse voltage. It also describes the measuring procedure. The results were analyzed and the experimentally obtained random variable breakdown voltage is found to belong to Weibull distribution in all cases. Based on these results it was found that for the vacuum circuit breakers with CuCr contacts and ...
2011-01-01
International Nuclear Information System (INIS)
A high-average power (kW) infrared (IR) free-electron laser (FEL) is currently being commissioned for the Jefferson Laboratory FEL User Facility. The IR FEL is driven by a unique superconducting rf linac which is recirculated to recover electron beam power that is not radiated in the FEL. The design and installation of the vacuum system for the FEL involved particular attention to minimizing particulate contamination which could cause problems with the superconducting acceleration cavities and the high power FEL optics. Particulate contamination levels of all vacuum components were monitored during the cleaning process using laser scattering. Cleaning, transport, and installation procedures were developed to minimize the contamination of the complete system. We will summarize a data base we compiled of particulate contamination levels of the various components installed in the FEL vacuum system.
1999-03-01
A variational approach to the Gross-Neveu model
Energy Technology Data Exchange (ETDEWEB)
The authors solve the instability of perturbative vacuum of Gross-Neveu model. They use a variational method. The analysis is nonperturbative as it uses only equal time commmutator/anticommutator algebra.
1988-01-01
International Nuclear Information System (INIS)
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)
2005-09-01
International Nuclear Information System (INIS)
In the present paper the progress of optimization of soft magnetic properties have been studied by applying different experimental techniques (magnetic measurements, electric measurements, X-ray analysis, and high-resolution electron microscopy observation). It has been shown that an increase in magnetic permeability after optimization annealing can be mainly attributed to annealing out of microvoids. (author)
2001-09-23
On the theory of transient enhanced diffusion in boron-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
1991-01-01
On the theory of transient enhanced diffusion in boron-implanted silicon
International Nuclear Information System (INIS)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
Manufacture and characterization of Pb(1-x)Sn(x)Te photoconductors
A general account of the properties, growing technology and annealing of lead-tin-telluride single crystals is given. Photoconductors were made for the 8 to 14 micron. spectral range and responsivity, detectivity and spectral response measurements showed satisfactory results. Improvement in the growing and annealing of the single crystals promise good performance in the near future.
1984-03-01
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
Energy Technology Data Exchange (ETDEWEB)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the ...
1991-01-01
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
International Nuclear Information System (INIS)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...
International Nuclear Information System (INIS)
The fundamental optical absorption of ion crystals characterizes the creation of different free low energetic electronic excitation (the excitons and electron-hole pairs), but their straight registration is not possible because of incommensurable big absorption factor of alkali halide monocrystals. So to registration the spectrums of alkali halide monocrystal very fine layers are necessary. We have received fine films of Nal and KCl in system of KCl-Nal-KCl, KCl-KI-KCl on the base of universal vacuum post VUP-4, VUP-5 by thermal evaporation. A unique spectral unit has been created For this on the basic the SDL-2 complex. Complex consists of radiator, systems of condensers, monochromators MDR-12 and MDR-23, receivers of radiation, controller by unit. Connect and control of monochromators by means of IBM-compatible computer has been created. Kinematics schemes of monochromators provide consequent removing on output slot of monochromatic radiation in operating range ...
Direct Comparison of the X-Ray Emission and Absorption of Cerium Oxide
Energy Technology Data Exchange (ETDEWEB)
Bremstrahlung Isochromat Spectroscopy (BIS). The XES spectra were collected using a Specs electron gun for the excitation and the XES 350 grating monochromator and channel plate system from Scienta as the photon detection. Spectra were collected in 'normal mode,' where the electron gun kinetic energy (KE) and the energy position of the center of the channel plate were both fixed and the energy distribution in the photon (hv) spectrum was derived from the intensities distributed across the channel plate detector in the energy dispersal direction. The polycrystalline Ce sample was oxidized by exposure to air at ambient pressures. After introduction to the ultra-high vacuum system, the oxidized sample was bombarded with Ar, to clean the topmost surface region and stabilize the surface and near surface regions. Although CeO{sub 2} would be the thermodynamically preferred composition in an oxygen rich environment, the combination of a ...
2010-11-24
Vacuum arc ignition by penning discharge in a strong magnetic field
Energy Technology Data Exchange (ETDEWEB)
Vacuum arc with cathode spots on the cold electrode is widely used as a plasma generator in a such kind of devices like metal ion sources, plasma cathode electron guns, thing films deposition facilities and others. Most vacuum arc devices utilize a high voltage discharge across an insulator surface to provide a trigger plasma which in turn initiates the main arc discharge. Operation of vacuum arc in a repetitively pulsed mode required a stable triggering system for the long time. But with a discharge across the insulators the number of stable pulses is limited by 100,000 or little bit more. The better method for vacuum arc ignition is low pressure discharge. As shown in this paper it is possible to increase the lifetime of the ignition system in 10 times at least, but negative characteristic of this system is a relatively high pressure (about 0.1 mtorr). In some kinds of vacuum arc ...
1995-12-31
> Develoopments which have imporved fuel core quality and reduced production costs are described. These developments in the melting and casting of uranium ingots arei modification of the crucible and knockout-slide assembly, substitution of uncoated crucibles for coated crucibles, and substitution of a one-piece gun barrel mold for a vertically split mold. (N.W.R.)
1961-01-01
Cold Vacuum Drying (CVD) Facility Technical Safety Requirements
Energy Technology Data Exchange (ETDEWEB)
The Technical Safety Requirements (TSRs) for the Cold Vacuum Drying Facility define acceptable conditions, safe boundaries, bases thereof, and management or administrative controls required to ensure safe operation. Controls required for public safety, significant defense-in-depth, significant worker safety, and for maintaining radiological and toxicological consequences below risk evaluation guidelines are included.
1999-12-16
Calcium fluoride window mounting
International Nuclear Information System (INIS)
A technique has been developed for joining a large calcium fluoride crystal to a stainless-steel flange by means of a silver transition ring. The process involves both vacuum brazing using a copper-silver alloy and air brazing using silver chloride. This paper describes the procedure used in fabricating a high-vacuum leak-tight calcium fluoride window assembly.
Algebraic description of perturbation theory in quantum electrodynamics
Energy Technology Data Exchange (ETDEWEB)
An algebraic formulation of the electromagnetic field in which various quantization procedures can be described was chosen to discuss perturbation calculations. It is shown that the Feynman rules and the second order calculation of the self-energy of the electron can be developed on the basis of the Fermi method of quantization. The algebraic approach clarifies the problems in defining the vacuum and other states which are associated with calculations in terms of field algebra operators. It is demonstrated that the vacuum state defined on the field algebra by Schwinger leads to incorrect results in the self-energy calculation.
1982-01-01
Defect engineering via ion implantation to control B diffusion in Si
International Nuclear Information System (INIS)
The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the ...
2009-03-15
Design of the ZTH vacuum liner
Energy Technology Data Exchange (ETDEWEB)
The current status of the ZTH vacuum liner design is covered by this report. ZTH will be the first experiment to be installed in the CPRF (Confinement Physics Research Facility) at the Los Alamos National Laboratory and is scheduled to be operational at the rated current of 4 MA in 1992. The vacuum vessel has a 2.4 m major radius and a 40 cm minor radius. Operating parameters which drive the vacuum vessel mechanical design include a 300 C bakeout temperature, an armour support system capable of withstanding 25 kV, a high toroidal resistance, 1250 kPa magnetic loading, a 10 minute cycle time, and high positional accuracy with respect to the conducting shell. The vacuum vessel design features which satisfy the operating parameters are defined. The liner is constructed of Inconel 625 and has a geometry which alternates sections of thin walled bellows with rigid ribs. These composite sections span between ...
1987-01-01
Energy Technology Data Exchange (ETDEWEB)
We analyze the timing of photons observed by the MAGIC telescope during a flare of the active galactic nucleus Mkn 501 for a possible correlation with energy, as suggested by some models of quantum gravity (QG), which predict a vacuum refractive index {approx_equal}1+(E/M{sub QGn}){sup n}, n=1,2. Parametrizing the delay between {gamma}-rays of different energies as {delta}t={+-}{tau}{sub l}E or {delta}t={+-}{tau}{sub q}E{sup 2}, we find {tau}{sub l}=(0.030{+-}0.012) s/GeV at the 2.5-{sigma} level, and {tau}{sub q}=(3.71{+-}2.57)x10{sup -6} s/GeV{sup 2}, respectively. We use these results to establish lower limits M{sub QG1}>0.21x10{sup 18} GeV and M{sub QG2}>0.26x10{sup 11} GeV at the 95% C.L. Monte Carlo studies confirm the MAGIC sensitivity to propagation effects at these levels. Thermal plasma effects in the source are negligible, but we cannot exclude the importance of some other source ...
2008-10-16
Effects of low-temperature catalytic pretreatments on coal structure and reactivity in liquefaction
Energy Technology Data Exchange (ETDEWEB)
Low-temperature catalytic pretreatment is a promising approach to the development of an improved liquefaction process- This work is a fundamental study on effects of pretreatments on coal structure and reactivity in liquefaction. The main objectives of this project are to study the coal structural changes induced by low-temperature catalytic and thermal pretreatments by using spectroscopic techniques; and to clarify the pretreatment-induced changes in reactivity or convertibility of coals in the subsequent liquefaction. This report describes the recent progress of our work. Substantial progress has been made in the spectroscopic characterization of structure and pretreatment-liquefaction reactions of a Montana subbituminous Coal (DECS-9), and thermochemical analysis of three mw and reacted bituminous coals. Temperature programmed liquefaction has been performed on three low-rank coals both in the presence and absence of dispersed molybdenum sulfide catalyst. We ...
1992-08-01
Energy Technology Data Exchange (ETDEWEB)
Three model boilers, manufactured to simulate full-size tube sheet crevices, were tested with various secondary side environments. The first was faulted with organics representative of the decomposition of humic acid. The second was faulted with sodium carbonate and sodium hydroxide, while the third was faulted with sodium sulfate and sodium hydroxide. Each model contained seven tubes, which included Alloy 600 in the mill-annealed (MA) and thermally-treated (TT) conditions and Alloy 690 in the thermally-treated condition. Two models contained Alloy 800 tubes in the mill-annealed condition and one had Alloy 800 in the mill-annealed/cold-worked/glass-bead-peened condition. Two different sizes of tubesheet crevices were used in all model boilers. In the organics-faulted boiler, tubes of Alloy 600MA, Alloy 690TT and Alloy 800MA experienced no significant intergranular attack (IGA); however, the Alloy 600TT had intergranular ...
1987-07-01
International Nuclear Information System (INIS)
Three model boilers, manufactured to simulate full-size tube sheet crevices, were tested with various secondary side environments. The first was faulted with organics representative of the decomposition of humic acid. The second was faulted with sodium carbonate and sodium hydroxide, while the third was faulted with sodium sulfate and sodium hydroxide. Each model contained seven tubes, which included Alloy 600 in the mill-annealed (MA) and thermally-treated (TT) conditions and Alloy 690 in the thermally-treated condition. Two models contained Alloy 800 tubes in the mill-annealed condition and one had Alloy 800 in the mill-annealed/cold-worked/glass-bead-peened condition. Two different sizes of tubesheet crevices were used in all model boilers. In the organics-faulted boiler, tubes of Alloy 600MA, Alloy 690TT and Alloy 800MA experienced no significant intergranular attack (IGA); however, the Alloy 600TT had intergranular ...
International Nuclear Information System (INIS)
Three ternary austenitic alloys (Fe-15Cr-25Ni, Fe-15Cr-25Ni-0.04P, Fe-15Cr-45Ni in both annealed and cold worked conditions) were irradiated at 465 C to 0.15, 0.28, and 0.42 dpa at above core position in the Fast Flux Test Facility utilizing the Materials Open Test Assembly to study the separate and synergistic effects of He/dpa ratio, phosphorus addition, nickel content and cold work level on microstructural evolution and hardening. The helium/dpa ratio was varied by isotopic doping with "5"9Ni to enhance the production rate of helium. The helium production rate was evaluated to be 62 appm He/dpa in the "5"9Ni-doped specimens and 0.26 appm He/dpa in the undoped specimens. Transmission electron microscopic examinations revealed that alloy composition affected significantly the evolution of microstructure during irradiation. Phosphorus addition prevented the formation of Frank loops through the precipitation of phosphide. Nickel content ...
1994-06-20
Effects of composition, heat treatment and cold work on structure and properties of alloy 800
Energy Technology Data Exchange (ETDEWEB)
The creep characteristics of alloy 800 at temperatures around 600/sup 0/C are greatly affected by the composition and treatments in the final stages of manufacture. Short-term and creep properties of alloy 800 at 600/sup 0/C are described for six melts covering the carbon range 0.054-0.078%, the titanium range 0.23-0.57% and the aluminium range 0.17-0.52%. The properties are related to the alloy chemistry and the microstructure. It is shown that homogeneously nucleated ..gamma..'-precipitates are the main cause of low ductility in alloy 800 but there is also some influence of, for instance, grain boundary M/sub 23/C/sub 6/ films and discontinuous precipitation of Ni/sub 3/Ti or M/sub 23/C/sub 6/ in grain boundaries. The extent of ..gamma..'-precipitation is controlled primarily by the (Ti+Al)-content. To avoid ..gamma..' and ensure a high creep ductility the (Ti+Al)-content should be limited to 0.70-0.75% for alloy 800 with a carbon content of 0.054-0.078% ...
1982-04-01
Effects of composition, heat treatment and cold work on structure and properties of alloy 800
International Nuclear Information System (INIS)
The creep characteristics of alloy 800 at temperatures around 600"0C are greatly affected by the composition and treatments in the final stages of manufacture. Short-term and creep properties of alloy 800 at 600"0C are described for six melts covering the carbon range 0.054-0.078%, the titanium range 0.23-0.57% and the aluminium range 0.17-0.52%. The properties are related to the alloy chemistry and the microstructure. It is shown that homogeneously nucleated #gamma#'-precipitates are the main cause of low ductility in alloy 800 but there is also some influence of, for instance, grain boundary M_2_3C_6 films and discontinuous precipitation of Ni_3Ti or M_2_3C_6 in grain boundaries. The extent of #gamma#'-precipitation is controlled primarily by the (Ti+Al)-content. To avoid #gamma#' and ensure a high creep ductility the (Ti+Al)-content should be limited to 0.70-0.75% for alloy 800 with a carbon content of 0.054-0.078% and solution annealed at 1150"0C. A lower ...
A radiation hardening model of 9Cr-martensitic steels including Dpa and helium
International Nuclear Information System (INIS)
Full text of publication follows: Low activation ferritic/martensitic steels are receiving a high priority in the European long term materials research. Although extensively investigated, the available experimental data do not cover all required parameter ranges and cannot unambiguously be used to produce hardening/embrittlement trend curves. Therefore, the main objective of this work is to provide a physically-based engineering model offering a rational to experimental observations. From the literature, experimental data were selected to establish a database that mainly consists of 8 to 9Cr-steels irradiated in the range of 50 to 600 deg. C up to 30 dpa and with a He-content up to 5000 appm. The database includes neutron and proton irradiations, He-implanted as well as B- and Ni-doped steels. Because of the difficulty of interpretation inherent to the Charpy impact test, only tensile data were considered. The difficulty stems from the large range of specimen sizes that are used, the ...
2007-12-10
International Nuclear Information System (INIS)
Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni_2Si, while Si is the diffusing species in CrSi_2. In Pd_2Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.
Energy Technology Data Exchange (ETDEWEB)
Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.
1985-08-15
Atomic scale simulations of arsenic ion implantation and annealing in silicon
International Nuclear Information System (INIS)
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
2004-12-15
Annealing of silicon implanted with arsine and hydrogen ions
Energy Technology Data Exchange (ETDEWEB)
Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)
2003-01-01
International Nuclear Information System (INIS)
Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.
1995-03-20
Theory of mirror machines at high beta
The kinetic and guiding center fluid theories of high-..beta.. plasma containment in mirror machines have been developed in a number of self-consistent models. The geometrical effects of magnetic field and ambipolar potential variation have been incorporated in a bounce-averaged Fokker-Planck code which shows that the square-well model somewhat overestimates the n tau and ..beta.. achievable in a mirror field. Simple analytic approximations to the resulting pressure profiles have been incorporated in three-dimensional fluid-equilibrium codes which show the effect of coil geometry on the maximum ..beta... Strongly curved vacuum fields allow higher ..beta.., but short plasmas in weakly curved fields tend to reverse the curvature locally before the mirror-mode limit is reached. Adiabaticity of particle orbits is described in terms of general formulas, applicable in high-..beta.. plasma equilibria, and is shown to break down ...
1976-08-06
Theory of low voltage annular beam free-electron lasers
Energy Technology Data Exchange (ETDEWEB)
An nonlinear analysis of an annular beam propagating through a cylindrical waveguide in the presence of a helical wiggler and an axial guide field is presented. The analysis is based upon the ARACHNE simulation which is a non-wiggler-averaged slow-time-scale simulation code in which the electromagnetic field is represented as a superposition of the TE and TM modes in a vacuum waveguide, and the beam space-charge waves are represented as a superposition of Gould-Trivelpiece modes. The DC self-electric and self-magnetic fields are also included in the model. ARACHNE has been extensively benchmarked against experiments at MIT and NRL in the past with good agreement, but all of these experiments have dealt with solid electron beams and beam voltages in excess of 200 kV. In seeking to reduce the beam voltage requirements we now consider the effect of operation with an annular beam. One advantage to be obtained by using an annular beam is that, for a ...
1995-12-31
Halogens for negative ion beams and ion-ion plasmas
International Nuclear Information System (INIS)
Negative ions have attractive features as drivers for inertial confinement fusion, because they will avoid electron cloud effects, and could be efficiently photodetached to neutrals after the final focus, which could also be beneficial in heating warm dense matter targets. The halogens have large electron affinities, and thus should be able to produce high current densities of relatively robust negative ions. Recent experiments comparing chlorine beams to argon beams using the same source, extraction optics, and diagnostics have demonstrated that Cl"- beams can be produced with similar emittance to Ar"+ beams, and with about 34 the current density from the same configuration. The observed effective beam temperature of about 13eV, and the similarity of current densities show that negative halogen beams can meet the current density and emittance requirements of heavy ion fusion. The near equivalence of the Cl"- and Cl"++Cl_2"+ current densities ...
2007-07-01
International Nuclear Information System (INIS)
Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a conducting grid is necessitated by the high ...
2004-03-01
International Nuclear Information System (INIS)
We have studied in detail the gamma radiation induced changes in the electrical properties of the (TeO_2)_0_._9 (In_2O_3)_0 _._1 thin films of different thicknesses, prepared by thermal evaporation in vacuum. The current-voltage characteristics for the as-deposited and exposed thin films were analysed to obtain current versus dose plots at different applied voltages. These plots clearly show that the current increases quite linearly with the radiation dose over a wide range and that the range of doses is higher for the thicker films. Beyond certain dose (a quantity dependent on the film thickness), however, the current has been observed to decrease. In order to understand the dose dependence of the current, we analysed the optical absorption spectra for the as-deposited and exposed thin films to obtain the dose dependences of the optical bandgap and energy width of band tails of the localized states. The increase of the current with the gamma radiation dose may be ...
2011-02-01
Dynamics of multidimensional generalization of Bianchi type-IX cosmological models
Energy Technology Data Exchange (ETDEWEB)
We investigate the dynamics of an 11-dimensional homogeneous cosmological model. We assume that the t = const hypersurfaces are products of a 3-dimensional Bianchi type-IX space and a 7-dimensional torus. Most results of our investigation hold when the 7-dimensional torus is replaced by an m-dimensional torus T/sup m/. We show that for a large class of vacuum solutions the physical space expands while the microspace contracts providing a natural mechanism of dimensional reduction. Matter satisfying a simple barotropic equation of state always breaks the process of dynamical dimensional reduction. With special attention we study the behavior of our model close to the initial singularity. In contrast with the 4-dimensional Bianchi type-IX cosmological model the Kasner solution always describes an approach to the initial singularity. We study the transition from the Kasner regime to the oscillatory regime. We show that matter does not significantly change this ...
1987-11-15
Dynamics of multidimensional generalization of Bianchi type-IX cosmological models
International Nuclear Information System (INIS)
We investigate the dynamics of an 11-dimensional homogeneous cosmological model. We assume that the t = const hypersurfaces are products of a 3-dimensional Bianchi type-IX space and a 7-dimensional torus. Most results of our investigation hold when the 7-dimensional torus is replaced by an m-dimensional torus T/sup m/. We show that for a large class of vacuum solutions the physical space expands while the microspace contracts providing a natural mechanism of dimensional reduction. Matter satisfying a simple barotropic equation of state always breaks the process of dynamical dimensional reduction. With special attention we study the behavior of our model close to the initial singularity. In contrast with the 4-dimensional Bianchi type-IX cosmological model the Kasner solution always describes an approach to the initial singularity. We study the transition from the Kasner regime to the oscillatory regime. We show that matter does not significantly change this ...
The overall objective of this project was to develop a new approach for the direct liquefaction of coal to produce an all-distillate product slate at a sizable cost reduction over current technology. The approach integrated coal selection, pretreatment, coal swelling with catalyst impregnation, liquefaction, product recovery with characterization, alternate bottoms processing, and a technical assessment including an economic evaluation. Heterofunctional solvents were the most effective in swelling coals. Also solvent blends such as isopropanol/water were more effective than pure solvents alone. Impregnating slurry catalysts simultaneously during coal swelling showed that better uptake was achieved with nonswelling solvent and higher impregnation temperature. Some enhancement in initial coal conversion was seen liquefying SO{sub 2}-treated Black Thunder coal with slurry catalysts, and also when hydrogen donor liquefaction solvents were used. ...
1994-12-31
The Cosmological Constant and Lorentz Invariance of the Vacuum State
One hope to solve the cosmological constant problem is to identify a symmetry principle, based on which the cosmological constant can be reduced either to zero, or to a tiny value. Here, we note that requiring that the vacuum state is Lorentz invariant significantly reduces the theoretical value of the vacuum energy density. Hence, this also reduces the discrepancy between the observed value of the cosmological constant and its theoretical expectation, down from 123 orders of magnitude to 56 orders of magnitude. We find that, at one loop level, massless particles do not yield any contribution to the cosmological constant. Another important consequence of Lorentz symmetry is stabilization of the gravitational hierarchy: the cosmological constant (divided by Newton's constant) does not run as the quartic power of the renormalization group scale, but instead only logarithmically.
2011-01-01
Low-range flowmeters for use with vacuum and leak standards
Energy Technology Data Exchange (ETDEWEB)
Vacuum pressure standards of the orifice-flow type require known gas flows of 10/sup -6/ mol/s (10/sup -2/ atm cm/sup 3//s at 0 /sup 0/C) and less. Known gas flows can also be used to calibrate ''standard'' leaks by comparing the pressures generated when flows from the leak and the flowmeter are alternately passed through a constant conductance. Two constant-pressure, piston displacement flowmeters developed at the National Bureau of Standards are described that can generate flows between 10/sup -6/ and 10/sup -10/ mol/s with an estimated uncertainty of 0.8% to 2%. Comparisons of the flowmeters with alternate calibration techniques, and repeated low-range leak and vacuum gauge calibrations, have been used to confirm the estimated uncertainty and random errors of the flowmeter.
1987-05-01
High-vacuum time-resolved laser-induced incandescence of?flame-generated soot
British Library Electronic Table of Contents (United Kingdom)
We have measured time-resolved laser-induced incandescence of flame-generated soot under high-vacuum conditions (4.1?10?6 mbar) at an excitation wavelength of 532 nm with laser fluences spanning 0.06?0.5 J/cm2. We generated soot in an ethylene/air diffusion flame, introduced it into the vacuum system with an aerodynamic lens, heated it using a pulsed laser with a spatially homogeneous and temporally smooth laser profile, and recorded LII temporal profiles at 685 nm. At low laser fluences LII signal decay rates are slow, and LII signals persist beyond the residence time of the soot particles in the detection region. At these fluences, the temporal maximum of the LII signal increases nearly linearly with increasing laser fluence until reaching a plateau at ?0.18?J/cm2. At higher fluences, th...
2011-01-01
Complexity of chaotic fields and standard model parameters
In order to understand the parameters of the standard model of electroweak and strong interactions (coupling constants, masses, mixing angles) one needs to embed the standard model into some larger theory that accounts for the observed values. This means some additional sector is needed that fixes and stabilizes the values of the fundamental constants of nature. In these lecture notes we describe in nontechnical terms how such a sector can be constructed. Our additional sector is based on rapidly fluctuating scalar fields that, although completely deterministic, evolve in the strongest possible chaotic way and exhibit complex behaviour. These chaotic fields generate potentials for moduli fields, which ultimately fix the fundamental parameters. The chaotic dynamics can be physically interpreted in terms of vacuum fluctuations. These vacuum fluctuations are different from those of QED or QCD but coupled with the same moduli fields as QED and QCD ...
2007-01-01
Self-organization of nickel atoms in silicon
British Library Electronic Table of Contents (United Kingdom)
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.
2011-01-01
UK PubMed Central (United Kingdom)
A parallel bundle of transmembrane (TM) alpha-helices surrounding a central pore is present in several classes of ion channel, including the nicotinic acetylcholine receptor (nAChR). We have modeled...Full Text Available
1994-10-01
Method of restoring degraded solar cells
Energy Technology Data Exchange (ETDEWEB)
Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.
1983-01-01
Stochastic Optimization Approaches for Solving Sudoku
In this paper the Sudoku problem is solved using stochastic search techniques and these are: Cultural Genetic Algorithm (CGA), Repulsive Particle Swarm Optimization (RPSO), Quantum Simulated Annealing (QSA) and the Hybrid method that combines Genetic Algorithm with Simulated Annealing (HGASA). The results obtained show that the CGA, QSA and HGASA are able to solve the Sudoku puzzle with CGA finding a solution in 28 seconds, while QSA finding a solution in 65 seconds and HGASA in 1.447 seconds. This is mainly because HGASA combines the parallel searching of GA with the flexibility of SA. The RPSO was found to be unable to solve the puzzle.
2008-01-01
Residual stress measurements on a stress relieved Zircaloy-4 weld by neutron diffraction
Energy Technology Data Exchange (ETDEWEB)
The macroscopic stress distribution across an annealed Zircaloy-4 gas tungsten arc weld was measured by neutron time-of-flight diffraction at the SMARTS diffractometer at Los Alamos National Laboratory. The stresses after annealing are about 40% lower than those in the same weld prior to heat treatment. The intergranular strains in the reference coupons, which give the macroscopic stress free lattice spacings, are consistent with the difference in cooling the strongly textured plate and the weakly textured weld.
2006-12-15
Recrystallization during and following hot working of magnesium alloy AZ31
Energy Technology Data Exchange (ETDEWEB)
The microstructures of magnesium AZ31 are examined following hot compression testing and annealing. The grain size, fraction dynamically recrystallized and, in a couple of cases, the crystallographic texture are reported. It was found that the progress of dynamic recrystallization is strongly sensitive to processing conditions but that the dynamically recrystallized grain size was less sensitive to stress than in other metals. It was also found that, for structures containing between 80 and 95% dynamic recrystallization, abnormal grain growth occurs during annealing. The crystallographic texture produced is also sensitive to the deformation conditions. (orig.)
2003-07-01
Energy Technology Data Exchange (ETDEWEB)
The recent definition of a postulated thermal shock accident followed promptly by system repressurization, termed an overcooling or pressurized thermal shock accident, has set a large analysis and research effort into motion. The essential elements are concerned with defining the accident transients, evaluating the instrumentation and controls that cause the postulated accidents, and evaluating the metallurgical and structural mechanics aspects of the reactor vessel with respect to its failure potential. This paper poses the question faced by the Nuclear Regulatory Commission (NRC) for the vessel steel embrittlement, annealing, and surveillance dosimetry facets of this postulated accident and provides information on our plans for study of this problem as well as current status.
1981-10-01
Free electron laser (FEL) annealing of diamond
International Nuclear Information System (INIS)
Free Electron Laser (FEL) with wide wavelength tunability has been developed and used for various applications. We report the structural-changes in P-ion-implanted diamond when we can achieve resonant excitation of the vibrations of specific bonds in the lattice of target (P-C) by using FEL. The change of property was analyzed by SIMS and Raman spectroscopy. After 5.8 #mu#m-FEL irradiation, we observed the crystallization of amorphous structure which was induced by P-ion-implantation. These results indicated the FEL annealing of diamond at room temperature. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)
1998-09-02
Application of high energy ion beam for the control of boron diffusion
Energy Technology Data Exchange (ETDEWEB)
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
2006-01-15
Application of high energy ion beam for the control of boron diffusion
International Nuclear Information System (INIS)
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline ...
2007-08-15
UK PubMed Central (United Kingdom)
Total thyroidectomy involving the adjacent structures of the trachea can cause tracheal damage such as early tracheal necrosis. The authors describe the first case of anterior tracheal necrosis following...Full Text Available
2012-01-01
Scheme for Entangling Two Distant Cavity Mirrors
International Nuclear Information System (INIS)
A scheme is presented for the generation of entangled states for two cavity mirrors. In the scheme each mirror initially in a vacuum state interacts with a weak coherent field, resulting in a photon-number dependent kick. The detection of a photon leaking from the cavities collapses the two mirrors to an entangled state.
2008-04-15
Radiation resistance of nylon. [Gamma radiation
Energy Technology Data Exchange (ETDEWEB)
Various nylons including nylon 6, nylon 66, nylon 610 and nylon 12 in the forms of fiber and film were irradiated with the gamma-ray from Co-60 at the dose rate of 0.12 Mrad/hr in the atmosphere of oxygen at 7 kg/cm/sup 2/ and at the room temperature. The irradiation in vacuum on the same specimens was performed at 0.5 Mrad/hr. The tensile properties and the gel fraction of the irradiated nylon samples were measured, and the radiation resistance of the nylons against the irradiation at low dose rate was estimated. From the experimental results, it became clear that in the case of irradiation in vacuum, all the nylons were durable to the irradiation of 250 Mrad or more, and nylon 6 was more durable than nylon 12, and in the case of irradiation in pressurized oxygen, the radiation resistance of the nylons decreased to one-tenth as compared with that in vacuum, and contrary to that in vacuum, nylon 12 was ...
1983-12-01
Quantum chaos in the mixmaster universe
International Nuclear Information System (INIS)
A Monte Carlo simulation of the vacuum Bianchi type-IX (mixmaster) cosmology yields a significant correlation between large universe volume and high anisotropy. An analog of the model's chaotic classical behavior is seen in the break up of the universe wave function at large volume into fingers in the corners of the minisuperspace anisotropy potential.
Energy Technology Data Exchange (ETDEWEB)
Progress is reported in fabrication and coating activities being conducted for the weapons program, nuclear test program, nuclear design program, magnetic fusion program, and miscellaneous applications. (DLC)
1984-07-11
Inhibited spontaneous emission by a Rydberg atom
Spontaneous radiation by an atom in a Rydberg state is inhibited by use of parallel conducting planes to eliminate the vacuum modes at the transition frequency. Spontaneous radiation emission is observed to turn off abruptly at the cutoff frequency of the waveguidelike structure, and the natural lifetime is measured to increase by a factor of at least 20.
1985-11-11
Influence of the Atmosphere on a Rubidium Clock's Frequency ...
... Figure 3 shows on-orbit (ie, vacuum) frequency aging rates for Milstar rubidium (Rb) clocks, GPS Block IIR Rb clocks, and GPS Block IIA Rb clocks. ...
2007-11-01
Electrostatic probe vacuum system for TCA BR tokamak
Energy Technology Data Exchange (ETDEWEB)
This paper describes the technical design and performance of the diagnostic system installed in the tokamak TCABR to measure parameters of the plasma edge. The system consists of four Langmuir probes under remote control. (author)
1999-12-01
Doublet III vacuum vessel neutral beam armor
The evolution of the Doublet III neutral beam armor is followed from the initial design of a radiation cooled metallic tile to the present actively cooled graphite design. Results of the thermal and stress analyses that dictated the present design are reviewed.
1979-11-01
Direct filtration for recovery of Schistosoma mansoni cercariae in the field
UK PubMed Central (United Kingdom)
The recovery of schistosome cercariae from natural waters has been limited by variations in turbidity and in the accuracy of recovery with different techniques. A modification of the Rowan vacuum paper...Full Text Available
1973-01-01
Critical assessment of the Schroedinger picture of quantum mechanics
Energy Technology Data Exchange (ETDEWEB)
We provide an example in which the Heisenberg and the Schroedinger pictures of quantum mechanics give different results, thus confirming the statement of P.A.M. Dirac that the two pictures may lead to inequivalent results. We consider a one-dimensional nonrelativistic charged harmonic oscillator (frequency {omega}{sub 0} and mass m), and take into account the action of the radiation reaction and the vacuum electromagnetic forces on the charged oscillator. We show that the Heisenberg picture gives the correct value, {Dirac_h}{omega}{sub 0}/2, for the ground state energy of the harmonic oscillator in both cases of classical and quantized vacuum fields. In the case of the Schroedinger picture, considering classical vacuum fields, and using a simple calculation for the classical radiation reaction force that is valid in the limit of large mass (mc{sup 2} >> {Dirac_h}{omega}{sub 0}), we obtain the value ...
2002-12-16
A four-block collimator installed on a control table for positioning the alignment reference marks. Designed for use with SPS secondary beams, the collimator operates under vacuum conditions. See Annual Report 1976 p. 121 and photo 7701014.
1977-01-01
Transient enhanced diffusion from decaborane molecular ion implantation
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...
1998-10-01
Transient enhanced diffusion from decaborane molecular ion implantation
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become ...
1998-10-01
International Nuclear Information System (INIS)
Transparent aluminum doped zinc oxide (ZnO:Al, AZO) conducting thin films with a high-preferential c-axis orientation were synthesized using a new sol-gel formula. The films were deposited using a spin-coating route onto borosilicate glass substrates. We used propylene glycol methyl ether (PGME) as the solvent in place of ethylene glycol monomethyl ether (EGME), which is commonly used because it is easier to deposit onto the substrates. PGME is also superior in terms of health and safety. PGME solvent does not need to settle for several days before use and can be spin-coated as soon as the raw material and solvent are mixed. The effects of this novel solvent on the structural, morphological, electrical and optical properties are discussed using XRD, SEM, a four-point probe and UV-VIS spectrophotometry. It was found that the films produced with PGME showed a high-preferential c-axis orientation and compact microstructure in comparison films produced using EGME. The ...
2010-09-01
Energy Technology Data Exchange (ETDEWEB)
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation ...
1999-06-01
International Nuclear Information System (INIS)
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation ...
1999-06-01
International Nuclear Information System (INIS)
Single phase amorphous Al_xHf_1_0_0_-_x alloys with a wide amorphization range (33#<=#x#<=#75) were synthesized by the solid-state interdiffusion of pure polycrystalline Al and Hf powders at room temperature using a rod-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders were investigated by means of X-ray diffraction, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling (0-173 ks) are intermixed to form amorphous phase(s) upon heating to about 980 K by so-called thermally assisted solid-state amorphization (TASSA). The amorphization heat formation for the binary Al_xHf_1_0_0_-_x system via TASSA, #DELTA#H"T"A"S"S"A_a, was measured directly as a function of the milling time. Homogeneous amorphous alloys ...
1999-03-04
Energy Technology Data Exchange (ETDEWEB)
Irradiation-assisted stress corrosion cracking (IASCC) of several types of BWR field components fabricated from solution-annealed austenitic stainless steels (SSs), including a core internal weld, were investigated by means of slow-strain-rate test (SSRT), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and field-emission-gun advanced analytical electron microscopy (FEG-AAEM). Based on the results of the tests and analyses, separate effects of neutron fluence, tensile properties, alloying elements and major impurities identified in the American Society for Testing and Materials (ASTM) specifications, minor impurities, water chemistry, and fabrication-related variables were determined. The results indicate strongly that minor impurities not specified by the ASTM-specifications play important roles, probably through a complex synergism with grain-boundary Cr depletion. These impurities, typically associated with steelmaking ...
1996-09-01
Floating zone crystal growth of selected R2PdSi3 ternary silicides
Energy Technology Data Exchange (ETDEWEB)
Substitution of various rare earths R within the class of R2PdSi3 single crystals with hexagonal AlB2-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds with R = Tb, Tm, Pr, and Gd. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, except of Tb2PdSi3, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. Thin precipitates of RSi secondary phases were detected in the crystal matrix. Their phase fraction can be diminished by growth from Pd-rich melt compositions and annealing treatments. The compounds exhibit antiferromagnetic order below ...
2011-06-01
International Nuclear Information System (INIS)
Host matrices for actinide immobilisation will undergo the formation of large helium quantities due to alpha decay. Helium diffusion rate has to be known in order to predict the long-term behaviour of the material, and particularly, the influence of helium accumulation on mechanical properties. A nuclear reaction analysis method, namely the "3He(d, p)"4He reaction, has been used to analyse the evolution of "3He profiles after ion implantations at 1 and 3 MeV in two materials, monoclinic ZrO_2 (as a test material) and Ca_9Nd(PO_4)_5(SiO_4)F_1_._5(OH)_0_._5 britholite (envisaged for Am and Pu long-term storage). Two data processing methods are used: the classical excitation curve (proton yields versus deuteron energy) and second, the proton energy spectrum for a given deuteron energy. The characteristics of the "3He profiles (depth, width) obtained by both methods are compared to SRIM estimations. Their evolution during subsequent annealings allows an estimation of ...
2002-06-01
The vacuum preserving Lie algebra of a classical W-algebra
International Nuclear Information System (INIS)
We simplify and generalize an argument due to Bowcock and Watts showing that one can associate a finite Lie algebra (the 'classical vacuum preserving algebra') containing the Moebius sl(2) subalgebra to any classical W-algebra. Our construction is based on a kinematical analysis of the Poisson brackets of quasi-fields. In the case of the W_S"G-subalgebra S of a simple Lie algebra G, we exhibit a natural isomorphism between this finite Lie algebra and G whereby the Moebius sl(2) is identified with S. (orig.).
1993-01-01
Possible influence of vacuum polarization on Q/sub 1//sub //sub s/ in muon catalyzed D-T fusion
Energy Technology Data Exchange (ETDEWEB)
The vacuum polarization splitting of the M-shell states in muonic hydrogen can have a profound influence on the muonit de-excitation cascade in deuterium and tritium targets. The cascade also shows sensitive dependence on the precise rate of transfer processes between certain excited muonic deuterium and tritium atoms. Recent experimental data, where a much greater population of the (d..mu..) qs state (1/sub 1//sub //sub s/) was found than previously predicted, can be explained if the transfer rates from the (d..mu..) M-shell are assumed to be strongly suppressed.
1988-12-27
Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS
British Library Electronic Table of Contents (United Kingdom)
Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.
2011-01-01
Discrete vacuum superselection rule in Wightman theory with essentially self-adjoint field operators
Energy Technology Data Exchange (ETDEWEB)
The main results of earlier work by the author, Sushko, and Khoruzhii describing the algebraic structure of quantum-field systems with (discrete) vacuum superselection rules are generalized to the large class of Wightman theories with essentially self-adjoint field operators (a very strong restriction was imposed on the theory, namely, that the polynomial Op algebra of the Wightman fields /rho/ belongs to the class II, i.e., /rho/ /sub s'/ =/rho/ /sub w'/). It is also shown that the field Op algebra of a Wightman theory with discrete vaccum superselection rule possesses a class II extension.
1986-07-01
Development of new three way valve using vacuum for liquid transfer
International Nuclear Information System (INIS)
The nitric acid solution dissolving nuclear fuel material is transferred with the three way valve called VCV (VCV: vide-casse-vide in Fr.) using vacuum in the Tokai Reprocessing Plant. The initial VCV was not reliable because it had broken with in 1 or 2 years. The cause of failure was damage of the plastic diaphragms in the moving parts. Then, the new VCV valve with stainless-steel bellows was developed. There is no failure in moving parts in 20 years, therefore reliability is significantly improved. (author)
2008-07-01
Constraints on extra dimensions from cosmological and terrestrial measurements
If quantum fields exist in extra compact dimensions, they will give rise to a quantum vacuum or Casimir energy. That vacuum energy will manifest itself as a cosmological constant. The fact that supernova and cosmic microwave background data indicate that the cosmological constant is of the same order as the critical mass density to close the universe supplies a lower bound on the size of the extra dimensions. Recent laboratory constraints on deviations from Newton's law place an upper limit. The allowed region is so small as to suggest that either extra compact dimensions do not exist, or their number is about to be tightly constrained by experimental data.
2001-01-01
Constraints on Extra Dimensions from Cosmological and Terrestrial Measurements
If quantum fields exist in extra compact dimensions, they will give rise to a quantum vacuum or Casimir energy. That vacuum energy will manifest itself as a cosmological constant. The fact that supernova and cosmic microwave background data indicate that the cosmological constant is of the same order as the critical mass density to close the universe supplies a lower bound on the size of the extra dimensions. Recent laboratory constraints on deviations from Newton's law place an upper limit. The allowed region is so small as to suggest that either extra compact dimensions do not exist, or their properties are about to be tightly constrained by experimental data.
2000-01-01
Coke fouling process on the oil refining; Processo de incrustacao por coque no refino do petroleo
Energy Technology Data Exchange (ETDEWEB)
The heavy crude fraction processing is performed under very high vacuum to minimize thermal cracking which cause coke deposition and damage the equipment. The current tendency is to process heavier oil leading to higher process temperatures and consequently to greater fouling. This situation demands better knowledge fouling process by carbonization. This problem is pronounced in the residual gasoil region of a vacuum distillation unit because it obstructs the recirculation circuits and the spray system with serious environmental and economics implications. This paper review the main correlated published work related to coke generation and fouling and presents a discussion about the works. (author)
2004-07-01
A new proof of the Bianchi type IX attractor theorem
Energy Technology Data Exchange (ETDEWEB)
We consider the dynamics toward the initial singularity of Bianchi type IX vacuum and orthogonal perfect fluid models with a linear equation of state. The 'Bianchi type IX attractor theorem' states that the past asymptotic behavior of generic type IX solutions is governed by Bianchi type I and II vacuum states (Mixmaster attractor). We give a comparatively short and self-contained new proof of this theorem. The proof we give is interesting in itself, but more importantly it illustrates and emphasizes that type IX is special, and to some extent misleading when one considers the broader context of generic models without symmetries.
2009-04-07
A new proof of the Bianchi type IX attractor theorem
International Nuclear Information System (INIS)
We consider the dynamics toward the initial singularity of Bianchi type IX vacuum and orthogonal perfect fluid models with a linear equation of state. The 'Bianchi type IX attractor theorem' states that the past asymptotic behavior of generic type IX solutions is governed by Bianchi type I and II vacuum states (Mixmaster attractor). We give a comparatively short and self-contained new proof of this theorem. The proof we give is interesting in itself, but more importantly it illustrates and emphasizes that type IX is special, and to some extent misleading when one considers the broader context of generic models without symmetries.
2009-04-07
A new proof of the Bianchi type IX attractor theorem
We consider the dynamics towards the initial singularity of Bianchi type IX vacuum and orthogonal perfect fluid models with a linear equation of state. The `Bianchi type IX attractor theorem' states that the past asymptotic behavior of generic type IX solutions is governed by Bianchi type I and II vacuum states (Mixmaster attractor). We give a comparatively short and self-contained new proof of this theorem. The proof we give is interesting in itself, but more importantly it illustrates and emphasizes that type IX is special, and to some extent misleading when one considers the broader context of generic models without symmetries.
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
The use of the focused ion beam (FIB) systems has increased to a high level in recent years. The imaging, milling, and deposition capabilities of the FIB make it the ideal instrument for e.g., site-specific failure analysis, specimen preparation and nano-machining. Ion channelling contrast allows for selective imaging of polycrystalline and polyphase microstructures. In addition, the FIB and CrossBeam registered instruments are unique stand-alone analytical tools. Their vast capabilities have enabled numerous applications into the semiconductor and materials sciences applications. These integrated CrossBeam registered Tools enable the observation and direct control of the FIB operation in real time. In addition to the improved accuracy and resolution the electron beam adds analytical capabilities as STEM, EDS and EBSP to the instruments. To ensure a safe and reliable operation of the instrument, a dedicated vacuum system is needed. This type of instrument combines ...
2005-07-01
Surface Roughness of Stainless Steel Bender Mirrors for FocusingSoft X-rays
Energy Technology Data Exchange (ETDEWEB)
We have used polished stainless steel as a mirror substrate to provide focusing of soft x-rays in grazing incidence reflection. The substrate is bent to an elliptical shape with large curvature and high stresses in the substrate require a strong elastic material. Conventional material choices of silicon or of glass will not withstand the stress required. The use of steel allows the substrates to be polished and installed flat, using screws in tapped holes. The ultra-high-vacuum bender mechanism is motorized and computer controlled. These mirrors are used to deliver focused beams of soft x-rays onto the surface of a sample for experiments at the Advanced Light Source (ALS). They provide an illumination field that can be as small as the mirror demagnification allows, for localized study, and can be enlarged, under computer control,for survey measurements over areas of the surface up to several millimeters. The critical issue of the quality of the steel surface, ...
2005-10-11
Sparking rates measured on the CRITS RFQ
Energy Technology Data Exchange (ETDEWEB)
During the test of the LEDA injector on the CRITS RFQ, an automatic data acquisition system has been implemented. The purpose was to measure the sparking rate of this CW RFQ. The RF level has some influences on vacuum, but there is no evidence of any reciprocal effect. The raw sparking rate is very difficult to interpret, since burst of sparks bias the statistics. A more convenient and useful interpretation is the number of sparking seconds. At the nominal field level (1.75 Kilp), the sparking-second rate is 0.5 per minute without beam. It strongly depends on the field, with a logarithmic law: 4.5 decade/Kilp. With beam, the sparking rate jumps to 3.0 per minute. As far as tested, it depends neither on the beam current (20 to 80 mA) nor on the field (1.5 to 1.7 Kilp tested). With sparking rates as measured here, one could not hope to build an RFQ that would be free of sparks over a several months continuous operation. Such a requirement, based ...
1998-05-28
Wood Plastic Composites (WPCs) have experienced a healthy growth during the last decade. However, improvement in properties is necessary to increase their utility for structural applications. The toughness of WPCs can be improved by creating a fine cellular structure while reducing the density. Extrusion processing is one of the most economical methods for profile formation. For our study, rectangular profiles were extruded using a twin-screw extrusion system with different grades of HDPE and with varying wood fibre and lubricant contents together with maleated polyethylene (MAPE) coupling agent to investigate their effects on WPC processing and mechanical properties. Work has been done to redesign the extrusion system setup to achieve smoother and stronger profiles. A guiding shaper, submerged in the water, has been designed to guide the material directly through water immediately after exiting the die; instead of passing it through a water cooled ...
2010-01-01
Effects of ion-induced electron emission on magnetron plasma instabilities
International Nuclear Information System (INIS)
Some magnetron sputtering systems experience rapid oscillations in the current and voltage of the plasma discharge after several hours when equipped with certain targets. These oscillations often lead to the plasma becoming extinguished, a condition known as ''flame-out.'' This article details the study of two 90% W--10% Ti magnetron targets which differed in density. The higher density targets sometimes experienced flame-out after approximately 3 h of sputtering. The less dense material could be sputtered for the entire 15 h life of the target. Scanning electron microscopy pictures and atomic composition depth profiles were obtained using Auger electron spectroscopy. In addition, a Colutron-based ion source with a high vacuum system was used to measure ion-induced secondary electron emission coefficients as a function of energy, ion specie, and gas coverage. Analysis of the sample from the group that suffers flame-out showed large regions of pure titanium in the ...
Design and operating experience of a 40 MW, highly-stabilized power supply
Energy Technology Data Exchange (ETDEWEB)
Four 10 MW, highly-stabilized power supply modules have been installed at the National High Magnetic Field Laboratory in Tallahassee, FL, to energize water-cooled, resistive, high-field research magnets. The power supply modules achieve a long term current stability if 10 ppM over a 12 h period with a short term ripple and noise variation of <10 ppM over a time period of one cycle. The power supply modules can operate independently, feeding four separate magnets, or two, three or four modules can operate in parallel. Each power supply module consists of a 12.5 kV vacuum circuit breaker, two three-winding, step-down transformers, a 24-pulse rectifier with interphase reactors, and a passive and an active filter. Two different transformer tap settings allow rated dc supply output voltages of 400 and 500 V. The rated current of a supply module is 17 kA and each supply module has a one-hour overload capability of 20 kA. The isolated output terminals of each power ...
1995-07-01
Closed string tachyons, AdS/CFT, and large N QCD
Energy Technology Data Exchange (ETDEWEB)
We find that tachyonic orbifold examples of AdS/CFT have corresponding instabilities at small radius, and can decay to more generic gauge theories. We do this by computing a destabilizing Coleman-Weinberg effective potential for twisted operators of the corresponding quiver gauge theories, generalizing calculations of Tseytlin and Zarembo, and interpreting them in terms of the large-N behavior of twisted-sector modes. The dynamically generated potential involves double-trace operators, which affect large-N correlators involving twisted fields but not those involving only untwisted fields, in line with large-N inheritance arguments. We point out a simple reason that no such small radius instability exists in gauge theories arising from freely acting orbifolds, which are tachyon free at large radius. When an instability is present, twisted gauge theory operators with the quantum numbers of the large-radius tachyons aquire vacuum expectation ...
2001-10-15
Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current
Energy Technology Data Exchange (ETDEWEB)
GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, ...
2011-04-01
Energy Technology Data Exchange (ETDEWEB)
With an objective to learn mechanisms in low-rank coal reformation processes, change of properties on coal surface was discussed. Difficulty in handling low-rank coal is attributed to large intrinsic water content. Since it contains highly volatile components, it has a danger of spontaneous ignition. The hot water drying (HWD) method was used for reformation. Coal which has been dry-pulverized to a grain size of 1 mm or smaller was mixed with water to make slurry, heated in an autoclave, cooled, filtered, and dried in vacuum. The HWD applied to Loy Yang and Yallourn coals resulted in rapid rise in pressure starting from about 250{degree}C. Water content (ANA value) absorbed into the coal has decreased largely, with the surface made hydrophobic effectively due to high temperature and pressure. Hydroxyl group and carbonyl group contents in the coal have decreased largely with rising reformation treatment temperature (according to FT-IR ...
1996-10-28
A shock tube study of the CO + OH {yields} CO{sub 2} + H reaction
Energy Technology Data Exchange (ETDEWEB)
The rate coefficient for the title reaction has been determined using mixtures of nitric acid (HNO{sub 3}), carbon monoxide (CO), and argon in incident shock wave experiments. Upon shock heating, the nitric acid rapidly decomposes into OH and NO{sub 2}. The OH subsequently reacts predominantly via the title reaction. Quantitative OH time histories were obtained by continuous-wave (cw) narrow-linewidth UV laser absorption of the R{sub 1}(5) line of the A{sup 2}{Sigma}{sup +} {l_arrow} X{sup 2}{Pi}{sub i} (0,0) transition at 32,606.56 cm{sup {minus}1} (vacuum). In some experiments, helium was added to the reactant mixture to examine CO vibrational excitation effects on the rate coefficient determination. It was found that the rate of excited CO (v = 1) with OH is less than the rate of ground-state CO (v = 0) with OH, which is in agreement with previous state-dependent work. The experiments were conducted over the temperature range 1,090--2,370 K ...
1994-12-31
A laboratory and field investigation of naphthenic acid corrosion inhibition
Energy Technology Data Exchange (ETDEWEB)
This paper presents results of a laboratory and field study of naphthenic acid corrosion and the development of an effective chemical inhibitor for this type of corrosive attack. In the laboratory corrosion test, which involved 20 hour weight loss measurements in high flash solvent with a total acid number (TAN) of 16 mg KOH/gm at a temperature of 600 F (316 C), blank corrosion rates averaged 140 to 150 mpy (3.56 to 3.81 mm/y). Inhibited rates averaged about 10 to 12 mpy (0.254 to 0.305 mm/y). The field test was carried out on a heavy vacuum gas oil (HVGO) stream at 550 F (288 C) . Blanks varied from a high of 425 mpy (10.79 mm/y) for a 24 hour test to a low of about 100 mpy (2.54 mm/y) for a 150 hour test. Both electrical resistance (ER) probes and weight loss coupons showed corrosion rates below 5 mpy (0.127 mm/y) as long as they were adequately passivated. Passivation consisted of exposing the coupons to a high inhibitor dosage for a ...
1995-11-01
Monthly report of activities: APRIL 1, 1969
This is the first of a series of monthly reports summarizing the status of the work of the National Accelerator Laboratory. This first report will cover developments since the publication of the Design Report in January. Authorization hearings were held before the Joint Committee on Atomic Energy on February 21, 1968. Dr. Wilson described the plans and designs of the Laboratory. The present plan of the Laboratory is that the Village of Weston will be utilized for office, laboratory, and shop space during construction. The Laboratory business office is already occupying several houses. The linac section is occupying three houses for offices and construction of an 8,000 sq ft laboratory building for linac work is almost complete. Another house is being used and a 4,500 sq ft inflatable building is being constructed for model-magnet and vacuum testing. Other temporary buildings will be constructed for use by other sections. We plan to move into the village as rapidly ...
1968-04-01
Energy Technology Data Exchange (ETDEWEB)
A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening process than pure ...
2002-01-01
A study of palladium silicide formed by focused ion beam implantation of palladium ions
The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect ...
1989-01-01
A study of palladium silicide formed by focused ion beam implantation of palladium ions
International Nuclear Information System (INIS)
The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. A heat transfer model ...
Energy Technology Data Exchange (ETDEWEB)
A Vacuum Circuit Breaker demonstrated its ability to interrupt short circuits with faster than normal rates of rise of Transient Recovery Voltage (TRV) at levels greater than those produced by most transformer secondary faults. Two recent exploratory test programs evaluated the interrupting ability of a 15kV Vacuum Circuit Breaker containing interrupters of the rotating arc type with contacts made from a Chromium-Copper powder metal mixture. The interrupting conditions covered a wide range of currents from 10% to 130% of the 28kA rated short circuit current of the tested circuit breaker and a wide range of TRV rates of rise, including the relatively slow rate of rise, normally used in testing and found in most indoor circuit breaker applications; two faster rates of rise equaling and exceeding those found in a known power plant transformer secondary protection application; and the fastest rates of rise possible in the laboratory which exceed ...
1994-12-31
Energy Technology Data Exchange (ETDEWEB)
Puffer gas circuit breaker used widely in interrupters with from middle capacity to large capacity does not keep away from reacting force of the puffer with high functions in principle and there is a limit in low operation. In this study, aiming at low operation of the interrupters, in order to clarify the basic motions of hybrid circuit interrupter that is the combination of thermal puffer gas circuit breaker and vacuum circuit breaker, the interrupting ability of simple thermal puffer gas breaker and the voltage sharing characteristics in the cases of series connection with the vacuum circuit breaker are studied. The results of the study are as follows. In comparing terminal short circuit accident interrupting ability of single flow typed thermal puffer gas breaker with that of double flow typed thermal puffer gas breaker, the interrupting ability of the double flow typed thermal puffer gas breaker may be improved. It is also clarified that ...
1993-12-20
X-ray microanalysis of Al/Zr multilayers in the transmission electron microscope
International Nuclear Information System (INIS)
A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thin amorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 C a metastable cubic alloy forms at the Zr deposited on Al interface. Upon heating ...
1997-04-04
Recovery of Tsub(c) by annealing of irradiated A-15 compounds
International Nuclear Information System (INIS)
Data on the recovery of Tsub(c) for several neutron irradiated A-15 compounds are presented. A model for the mechanism of recovery is suggested and has been applied to isothermal annealing data at 550"0C on a sample of Nb_3Ge and to isochronal annealing (200"0C-900"0C) data on V_3Si, Nb_3Ge and Nb_3Sn subjected to varying doses of fast neutrons and on Nb_3Al of various compositions subjected to the same dose. The recovery is assumed to take place by vacancy assisted reordering and occurs in several stages. The major low temperature stage is attributed to irradiation induced vacancies, while at high temperatures there are depleted and recovery is ascribed to the motion of thermal equilibrium vacancies. Activation energies deduced for these processes, approximately 1 eV for vacancy motion and approximately 1-2 eV for vacancy formation, are consistent with what is known about diffusion in the A-15 structure. (Auth.).
Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low energy (ULE) B implanted Si during annealing. Defect dissolution occurs earlier and at ...
2002-01-01
Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon
International Nuclear Information System (INIS)
We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, #left brace#1 1 3#right brace#s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of #left brace#1 1 3#right brace# defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low energy (ULE) B implanted Si during annealing. Defect dissolution occurs ...
2002-01-01
International Nuclear Information System (INIS)
A zirconium alloy comprising from 0.8 to 1.6wt% of Sn, from 0.17 to 0.25wt% of Fe, from 0.15 to 0.25wt% of Cr and from 0.01 to 0.08wt% of Ni and Si at a concentration of 120ppm or lower as an impurity and the balance of Zr is melted into cast pieces and then subjected to an #beta# annealing. It is controlled so as to satisfy Fe + Cr + Ni #<=# 0.52wt%. Then, rolling and annealing are applied so that the total heat injection amount #SIGMA#A_i to the materials is within a range of from 1 x 10"-"1"9 to 1 x 10"-"1"7. #SIGMA#A_i = #SIGMA#t_i #centre dot# exp(-Q/RT_i), in which t_i represents processing time (hour) at an ith heat treatment step after the #beta# annealing, T_i represents a processing temperature (K) in the step i. Q represents an activating energy, R represents a gas constant, and Q/R 40,000. (I.N.).
1995-08-23
Energy Technology Data Exchange (ETDEWEB)
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during high temperature ...
1995-05-01
Irradiation hardening of reduced activation martensitic steels
International Nuclear Information System (INIS)
Irradiation response on the tensile properties of 9Cr-2W steels has been investigated following FFTF/MOTA irradiations at temperatures between 646 and 873 K up to doses between 10 and 59 dpa. The largest irradiation hardening accompanied by the largest decrease in the elongation is observed for the specimens irradiated at 646 K at doses between 10 and 15 dpa. The irradiation hardening appears to saturate at a dose of around 10 dpa at the irradiation temperature. No hardening but softening was observed in the specimens irradiated at above 703 K to doses of 40 and 59 dpa. Microstructural observation by transmission electron microscope (TEM) revealed that the dislocation loops with the a left angle 100 right angle type Burgers vector and small precipitates which were identified to be M_6C type carbides existed after the irradiation at below 703 K. As for the void formation, the average size of voids increased with increasing irradiation temperature from 646 to 703 K. No voids were ...
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films
International Nuclear Information System (INIS)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films
Energy Technology Data Exchange (ETDEWEB)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
1993-07-16
Hardening by point defects in neutron irradiated AlN and SiC
International Nuclear Information System (INIS)
Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops ...
Defects induced by focused ion beam implantation in GaAs
Energy Technology Data Exchange (ETDEWEB)
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .
1988-05-01
Defects induced by focused ion beam implantation in GaAs
International Nuclear Information System (INIS)
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.
Creep-fatigue and temperature synergisms in alloy 800
Energy Technology Data Exchange (ETDEWEB)
Alloy 800 from three different commercial heats have been continuously cycled and cycled with a hold period at 922/sup 0/K. The starting microstructures of these heats reflects an inherently wide spectrum of possibilities for Alloy 800. The amounts and morphologies of the TiC and M/sub 23/C/sub 6/ carbides are different among the heats. During cycling, M/sub 23/C/sub 6/ forms intragranularly in a solution annealed heat. This precipitation contributes to the cyclic hardening. Both mill annealed heats of Alloy 800 are stable to carbide precipitation during cycling. The heat with the lower carbon content formed ..gamma..' during cycling but the volume fraction was too low to contribute to hardening. The inclusion of hold periods caused the dislocation substructure to become more diffuse in the mill annealed heats. The cyclic hardening was enhanced with the inclusion of the hold periods but this was not due to any ...
1984-01-01
Aluminum nitride precipitation and texture development in batch-annealed bake-hardening steel
Energy Technology Data Exchange (ETDEWEB)
A model is presented that describes the development of texture during the production process of bake-hardening steel recrystallized in a batch-annealing furnace. Proper conditions are analyzed to generate a pronounced {gamma}-fiber texture and a pancake microstructure that shows superior deep drawability. The {gamma}-fiber texture is assumed to be caused by the interaction between tertiary precipitating aluminum nitride particles and the recrystallization process during heating in the furnace. Deep drawability is presented in terms of the logarithmic {gamma}- and {alpha}-fiber X-ray intensity ratio. The computer simulation of the coupled aluminum nitride precipitation and recrystallization kinetics is based on an iterative procedure. A comparison between simulation results and available experimental data proves the ability of the model to predict the final deep drawability, taking into account the initial aluminum and nitrogen contents, the time/temperature history ...
1999-06-01
A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations
International Nuclear Information System (INIS)
Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the '+n', in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity concentration comparable to the net I-V excess, ...
2004-12-15
Energy Technology Data Exchange (ETDEWEB)
Normally, the alloy NiMo28 is used in the solution annealed and quenched condition in which it has a face centred cubic matrix structure. The matrix of the material is supersaturated with molybdenum and, at temperatures above 800 C, has a tendency to form intermetallic precipitates such as the Ni{sub 4}Mo-ordered phase leading to the embrittlement of the NiMo28-ordered phase leading to the embrittlement of the NiMo28 alloy during hot working. For this reason, the aim of these investigations was to optimise the alloy by reducing its tendency to embrittle. The TEM-analyses carried out served to investigate the precipitation of the material as a function of its iron content after ageing at 700 C. The change in hardness and in the lattice constants of the NiMo28-specimens with iron content were also determined. To improve the hot working properties of this material it is recommended that the iron content be kept to about 3.2 mass % in order to reduce the tendency of ...
1996-07-01
Energy Technology Data Exchange (ETDEWEB)
Fuel cells based on solid oxides ('SOFC') are excellent alternative devices for power generation, when they are operated at high temperature, e.g. above 600 C. Having only fixed parts for the power generating part of the device is only one advantage of the fuel cell. Due to their unique design, these devices offer a maximum of efficiency for energy conversion compared to conventional power generating systems, which are mainly based on turbines. One aim of this thesis is the examination of alternative electrolyte and cathode materials for the SOFC applications at reduced temperatures, which means in the temperature range between 600 C and 750 C. For the first main task, several materials from the oxygen ion conducting electrolytes were selected. Different strontium and magnesium doped lanthanum gallate (LSGM) materials with additional transition metal doping were selected and prepared via two different preparation methods. The optimum calcining conditions were ...
2007-05-04
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Energy Technology Data Exchange (ETDEWEB)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
1998-05-01
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
International Nuclear Information System (INIS)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
1998-05-01
Study of surface segregation of Si on palladium silicide using Auger electron spectroscopy
International Nuclear Information System (INIS)
The transformation of Pd/Si to Pd_2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd_2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd_2Si is formed in the form of islands, which grow as the annealing temperature is increased.
2004-11-21
International Nuclear Information System (INIS)
Weld metal, base material and stainless steel overlay specimens for Charpy tests and static tensile tests were irradiated for a year in a power reactor of the Bohunice nuclear power plant in place of the evaluated surveillance specimens. The material of the specimens was identical with that of the WWER-440 reactor pressure vessels, and was exposed to a fluence of (1.2 - 4.5) x 10"2"3 m"-"2 (E > 0.5 MeV) at approximately 270 degC. Some of the irradiated as well as unirradiated specimens were subjected to regeneration annealing at 475 degC for 168 h. The behavior of the materials after irradiation and annealing was evaluated. (author). 33 tabs., 32 figs., 8 refs.
Influence of shape on ordering of granular systems in two dimensions
Energy Technology Data Exchange (ETDEWEB)
We investigate ordering properties of two-dimensional granular materials using several shapes created by welding ball bearings together. Ordered domains form much more easily in two than in three dimensions, even when configurations lack long-range order. The onset of ordered domains occurs near a packing density of 0.8, a phenomenon observed previously for disks. One of our shapes, the trapezoid, has packings that remain disordered and near the transition density even after annealing by shaking. Although random packings are unstable for disks and many other shapes in two dimensions, trapezoid packings provide an approach to studying two-dimensional randomness. We also find that the rotational symmetry of a shape is an excellent predictor of how easily it orders, and a potential guide to identifying two-dimensional shapes that remain random after annealing.
2001-06-01
International Nuclear Information System (INIS)
It has recently been shown that the superconducting properties of Nb-base A-15 compounds, A_3B, are severely degraded when exposed to high-energy (E>1 MeV) neutron irradiation at ambient reactor temperatures. In each case, superconducting transition temperatures, Tsub(c), and the Bragg Williams order parameters, S, were observed to decrease steadily with irradiations in excess of 10"1"8 nvt. During irradiation the A-15 structure is retained and subsequent isothermal annealing restores almost completely the compound's original Tsub(c) value. In this letter a correlation between B atom diameter and the recovery rates of Tsub(c) for the irradiated materials Nb_3Ge, Nb_3Ga, Nb_3Al and Nb_3Sn is reported. (Auth.).
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films
Energy Technology Data Exchange (ETDEWEB)
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
1982-06-11
Growth meachnisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films
Energy Technology Data Exchange (ETDEWEB)
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.
1982-06-11
British Library Electronic Table of Contents (United Kingdom)
An ultrafine-grained ferrite/cementite (UGF/C) steel with a local high density of cementite particles was fabricated through caliber-warm-rolling followed by annealing and resulted in a bimodal-sized microstructure. The characteristic bimodal-sized microstructure was attributed to the original ferrite-pearlite structure and cementite spacing, and reflected the original ferrite-pearlite structure. The smaller-sized clusters corresponded to the former pearlite regions and the larger-sized clusters to the proeutectoid ferrite regions. The cementite particles naturally localized within the former pearlite region. Most of the ferrite coarsening did not occur until the cementite particle spacing reached a critical value. The UGF/C microstructure with a bimodal grain size showed a yield strength ...
2008-01-01
Focused ion beam implantation induced site-selective growth of InAs quantum dots
International Nuclear Information System (INIS)
The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.
2007-09-17
Electrical properties of focused-ion-beam boron-implanted silicon
International Nuclear Information System (INIS)
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
Energy Technology Data Exchange (ETDEWEB)
Investigations of dislocation structure and mechanical properties of iron after rolling deformation in shaped rolls and after hydroextrusion are conducted. It is shown that dislocation iron structure slightly changes with deformation degree after rolling in shaped rolls and annealing and it is characterized by low density of screw dislocations. Cold brittleness temperature decreases in the result of rolling and the succeeding recrystallization and impact strength increases both at room temperature and at low temperatures. Screw dislocations having high Peierls barrier prevail in the structure after hydroextrusions. The iron deformed by hydroextrusion at 400 mPa and higher after annealing has high cold brittleness temperature and low impact strength.
1982-03-01
Analysis of the creep strain-time behavior of alloy 800
Energy Technology Data Exchange (ETDEWEB)
The high-nickel austenitic alloy 800 (in both the mill-annealed and the solution-treated grades) has several attractive properties that make it a good candidate for service attractive properties that make it a good candidate for service at elevated temperatures in corrosive environments. One such property is creep resistance. This report analyzes the elevated-temperature creep behavior of the mill-annealed grade, generally referred to simply as alloy 800. (The solution-treated grade is known as alloy 800H). Available data over the temperature range from 538 to 760/sup 0/C were collected and evaluated to yield mathematically approximations for creep-rupture and strain-time behavior for use in design calculations. However, the creep behavior of this material is extremely complex, and the analysis presented here contains substantial uncertainties. All results in this report should be considered preliminary because of limited data currently ...
1983-05-01
Energy Technology Data Exchange (ETDEWEB)
Kawasaki Steel has constructed many facilities for 15 years to produce cold rolled products and galvanized products in Mizushima Works and Chiba Works. To efficiently and stably produce high and uniform quality products, various new control methods have been developed and applied to these new facilities. Especially, temperature control in a continuous annealing line, zinc coating control in a continuous galvanizing line or paint coating control in a multi-purpose coating line and tension control to achieve stable processing are the most advanced technologies and are introduced in this paper. (author)
1999-12-01
Turning the Moon into a Solar Photovoltaic Paradise
Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
We revisited the quantum Zeno paradox, which claims that a generic quantum system prepared in a state which is not an eigenstate of the Hamiltonian operator and is continuously observed never decays. Since any perfectly isolated quantum system always interact with a vacuum field, we analyze the possibility of using this fact to solve the above mentioned conceptual problem. Therefore we discuss a two-level system or qubit-Bose field interaction Hamiltonians. We consider the quantum dynamics of this two-level system, prepared in the excited state interacting with a Bose field prepared in the Poincare invariant vacuum state. Using a first-order approximation in time-dependent perturbation theory, we evaluate the probability of spontaneous decay of the two-level system driven by the vacuum field. This probability is evaluated for a finite time interval. Using the standard argument to obtain the quantum Zeno paradox, we consider ...
2006-12-15
Potassium deposition on a thiophene-terminated alkanethiol monolayer
International Nuclear Information System (INIS)
Potassium deposition in ultrahigh vacuum on 12-(3-thienyl)dodecanethiol monolayers assembled on gold surfaces has been investigated using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Angle-resolved XPS indicates that initially deposited potassium penetrates the self-assembled monolayer (SAM) and diffuses to the SAM/Au interface. Even after large metal doses, the presence of thiophene ring valence electronic states in the UPS spectra confirms that most of the thiophene rings (at the SAM/vacuum interface) are not covered by potassium. The binding energy shifts of the thiophene ring valence states and the C1s and thiophene S2p peaks, referenced to the Fermi level, are due to the work function changes of the gold substrate. This indicates that these electronic states are pinned to the vacuum level, in contrast to the thiolate S2p orbital, which is pinned to the Fermi level. For large potassium doses, the ...
2009-05-01
Energy Technology Data Exchange (ETDEWEB)
Aiming to realize ball bearings operable in a vacuum and under high temperature, silicon nitride (Si3N4) ceramic ball bearings were tested. The tested ball bearings were angular contact ball bearings composed of silicon nitride with sputtered molybdenum disulfide coating using a retainer of hot-pressed self-lubricating composite material. The time variation of the frictional torque was examined for the operations under the conditions at 500{degree}C in a vacuum at a rotational speed of 600 rpm and 50N thrust load for 5{times}10{sup 7}revolutions (1400 hours) and for 1.5{times}10{sup 8}revolutions (4200 hours). Excellent tribological performance was obtained. The ball bearings are lubricated with the molybdenum disulfide film at the initial stage of the operation and with a transfer film formed from the retainer material to the balls. In a test at 650{degree}C, low and stable frictional torque was observed up to 500 hours of operation as of the ...
1996-04-05
On the plasma rotation in a straight magnetized filter of a pulsed vacuum arc
International Nuclear Information System (INIS)
In vacuum arcs of interest for ion deposition, in which a magnetic filter is used, significant plasma rotation about the filter axis can develop. In the present work we present experimental evidence and simplified models to interpret relatively fast rotation of plasma generated in a pulsed vacuum arc with a straight magnetic filter and with a magnetic field strength in the range 52-430 G. The plasma rotation is produced in the first part of the filter (the driving region) where either the expanding or the contracting plasma encounters a mainly axial magnetic field. In the next part of the filter (the rotation region) a quasi-equilibrium is achieved and the plasma does not evolve further significantly. A rigid-rotor type of equilibrium is considered to model the rotation region, with experimentally obtained parameters, and a simple model is employed in the driving region to quantify the magnitude of the plasma rotation. It is found that at the ...
2007-01-21
2007 SB14 Source Reduction Plan/Report
Energy Technology Data Exchange (ETDEWEB)
Aqueous solutions (mixed waste) generated from various LLNL operations, such as debris washing, sample preparation and analysis, and equipment maintenance and cleanout, were combined for storage in the B695 tank farm. Prior to combination the individual waste streams had different codes depending on the particular generating process and waste characteristics. The largest streams were CWC 132, 791, 134, 792. Several smaller waste streams were also included. This combined waste stream was treated at LLNL's waste treatment facility using a vacuum filtration and cool vapor evaporation process in preparation for discharge to sanitary sewer. Prior to discharge, the treated waste stream was sampled and the results were reviewed by LLNL's water monitoring specialists. The treated solution was discharged following confirmation that it met the discharge criteria. A major source, accounting for 50% for this waste stream, is metal machining, cutting and ...
2007-07-24
Vessel elements present in the secondary xylem of Trochodendron and Tetracentron (Trochodendraceae)
British Library Electronic Table of Contents (United Kingdom)
For almost 150 years, the two monotypic genera Trochodendron and Tetracentron (Trochodendraceae) have been considered to share an unusual and primitive feature in angiosperms - the lack of vessels in their wood. Therefore, they have been classified in a basal position in the angiosperms. Our observations by light microscopy, low-vacuum environmental scanning electron microscopy (ESEM) and high-vacuum scanning electron microscopy (SEM) both in fresh and FAA-fixed materials consistently showed the presence of tracheary elements differentiated into two types in both genera. In Trochodendron, the tracheary elements can be divided into perforate vessel elements and imperforate fiber-tracheids and tracheids. The vessel elements show end and lateral walls. The pits on the end walls are elongate- ...
2011-01-01
Vacuum leak problem in low energy of pelletron
International Nuclear Information System (INIS)
During unit wise conditioning of unit 8, the vacuum started deteriorating inside the tube after a spark. The RGA reading was taken and it was found out that residual gas inside tube was sulphur hexafluoride. A leak was detected in second tube of unit number eight in between electrode 6 to 8. Leak was sealed with the sealant. Again leak check was done and no leak was found. The tank was closed and conditioning was started again. During the same unit number eight conditioning, leak developed again followed by a spark. So the damaged tube was replaced with a new accelerator tube. During the installation time the alignment of the machine was taken care. Again leak checking was done and the tube was baked properly. The tank was closed again and this particular unit was conditioned for about four days. The maximum voltage it has attained was 1.1 MV. (author)
We formulate a complete theory of Edge Radiation based on a novel method relying on Fourier Optics techniques. Similar types of radiation like Transition Undulator Radiation are addressed in the framework of the same formalism. Special attention is payed in discussing the validity of approximations upon which the theory is built. Our study makes consistent use of both similarity techniques and comparisons with numerical results from simulation. We discuss both near and far zone. Physical understanding of many asymptotes is discussed. Based on the solution of the field equation with a tensor Green's function technique, we also discuss an analytical model to describe the presence of a vacuum chamber. In particular, explicit calculations for a circular vacuum chamber are reported. Finally, we consider the use of Edge Radiation as a tool for electron beam diagnostics. We discuss Coherent Edge Radiation, Extraction of Edge Radiation by a mirror, and ...
2008-01-01
British Library Electronic Table of Contents (United Kingdom)
The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...
2011-01-01
Special features of control and protection for large saturated steam turbines
International Nuclear Information System (INIS)
For shut-down safety of the turbine generator (securing of auxiliary power operation after load shut-down and preventing the reaching of overspeed after load shut-down with disturbed turbine governing system) additional measures compared to those for superheated steam turbines are required for turbine generators in plants with pressurized water reactor (PWR) as well as those with boiling water reactor (BWR) . Equipment is described (e.g. overspeed govern or selecting connection, vacuum breaker, bypass valves, intercepting valves) which, depending on the own conditions of the individual turbine generator (e.g. run-up time, vacuum, enclosed energy), may be applied alone or in jointly. (orig.).
Size determination of Acipenser ruthenus spermatozoa in different types of electron microscopy
British Library Electronic Table of Contents (United Kingdom)
In this study three types of scanning electron microscopes were used for the size determination of spermatozoa of sterlet Acipenser ruthenus - high vacuum scanning electron microscope (SEM, JEOL 6300), environmental scanning electron microscope (ESEM, Quanta 200 FEG), field emission scanning electron microscope (FESEM, JEOL 7401F) with cryoattachment Alto 2500 (Gatan) and transmission electron microscope (TEM, JEOL 1010). The use of particular microscopes was tied with different specimen preparation techniques. The aim of this study was to evaluate to what degree the type of used electron microscope can influence the size of different parts of spermatozoa. For high vacuum SEM the specimen was prepared using two slightly different procedures. After chemical fixation with 2.5% glutaraldehyde...
2010-01-01
Secondary electron yield measurements from thin surface coatings for NLC electron cloud reduction
In the beam pipe of the positron damping ring of the Next Linear Collider, electrons will be created by beam interaction with the surrounding vacuum chamber wall and give rise to an electron cloud. Several solutions are possible for avoiding the electron cloud, without changing the bunch structure or the diameter of the vacuum chamber. Some of the currently available solutions for preventing this spurious electron load include reducing residual gas ionization by the beam, minimizing beam photon-induced electron production, and lowering the secondary electron yield (SEY) of the chamber wall. We will report on recent SEY measurements performed at SLAC on TiN coatings and TiZrV non-evaporable getter thin films.
2004-01-01
Recent advance of focused ion beam technology in maskless deposition and patterning
International Nuclear Information System (INIS)
The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).
Particulate composites in the TiC-TiYTZP system
International Nuclear Information System (INIS)
Twelve powders of TiO_2-Y_2O_3-ZrO_2 solid solution of the methodically changed composition were prepared by a coprecipitation-calcination technique. After mixing with phenol-formaldehyde resin, the powders were calcinated for 2 hours at 1200"oC in vacuum. The resultant composite powders contained TiC and non-reacted carbon. Green compacts were sintered in vacuum at 1500"oC for 2 hours. A temperature increase was stopped at 1200"oC to react remains of carbon. There were two carbides in the composites TiC and ZrC. TiC non-stoichiometry depended on carbon content in the system. Phase composition of the depended on of titania and yttria in zirconia solid solution. The majority of the samples showed two tetragonal zirconia phases differing in lattice parameter and tetragonality. (author)
2004-09-12
Overview of Cooling Water System for the KSTAR 1st Plasma Experiment
International Nuclear Information System (INIS)
The KSTAR cooling water system (CWS) consists of a primary cooling water system (PCWS), a secondary cooling water system (SCWS), and a de-mineralizing and de-ionized water system (DIWS). The PCWS cooling loops have been made for the poloidal field (PF) and toroidal field (TF) magnet power supplies (MPS), vacuum vessel (VV), electron cyclotron heating (ECH), ion cyclotron heating (ICRH), vacuum pumps, diagnostics, helium facility, etc. The CWS had been done individual commissioning of each system to confirm the design specifications by the end of 2006 and had gradually begun operation for the KSTAR ancillary devices by March 2008
2009-05-01
International Nuclear Information System (INIS)
Pd was deposited onto Si (111) 7x7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the <110> direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.
2003-01-22
Energy Technology Data Exchange (ETDEWEB)
This paper describes the experimental results of long-life solid lubricated ball bearings tested under high-vacuum of 10 exp -4 Pa, high-temperature of 300 C, and high-speed (9000 rpm) conditions. For full ball-type bearings, the thin soft metals, either Ag or Pb, which were coated on the races and balls, appeared to have good torque properties. However, the durability of such bearings was less than 300 hours. The transfer films from the lamellar solid MoS2 and metal composite retainers improved the torque and wear properties. For ceramic, i.e., silicon nitride, balls used with steel rings, wear occurred on the inner rings. All ceramic bearings with composite retainers showed improved torque and wear properties. 18 refs.
1993-04-01
Characterization of vacuum-multifoil insulation for long-life thermal batteries
Energy Technology Data Exchange (ETDEWEB)
The use of vacuum multifoil (VMF) container for thermal insulation in long-life thermal batteries was investigated in a proof-of-concept demonstration. An InvenTek-designed VMF container 4.9 inches in diameter by 10 inches long was used with an internally heated aluminum block, to simulate a thermal-battery stack. The block was heated to 525 C or 600 C and allowed to cool while monitoring the temperature of the block and the external case at three locations with time. The data indicate that it should be possible to build an equivalent-sized thermal battery that should last up to six hours, which would meet the requirements for a long-life sonobuoy application.
2000-04-17
Biaxial Bianchi type 9 quantum cosmology
Energy Technology Data Exchange (ETDEWEB)
We investigate the quantum cosmology of spatially homogeneous models with compact spatial sections admitting a u(2) isometry algebra. The metric ansatz in these models is that of Bianchi type IX with two scale factors set to be equal. We apply the Hartle-Hawking no-boundary path integral prescription and find the semi-classical contributions to the wave function. Exact formulae are obtainable for certain contributions and otherwise the limits of large and small anisotropy (for the pure vacuum case) and large spatial volume or small anisotropy (for the case with a positive cosmological constant) are considered. For the pure vacuum case we find no semiclassical components which would correspond to Lorentzian universes. For the case with a cosmological constant the Hartle-Hawking boundary conditions formally constrain one of the parameters in the Lorentzian solutions to be purely imaginary. Possible interpretations of this imaginary parameter are ...
1990-04-01
Biaxial Bianchi type 9 quantum cosmology
International Nuclear Information System (INIS)
We investigate the quantum cosmology of spatially homogeneous models with compact spatial sections admitting a u(2) isometry algebra. The metric ansatz in these models is that of Bianchi type IX with two scale factors set to be equal. We apply the Hartle-Hawking no-boundary path integral prescription and find the semi-classical contributions to the wave function. Exact formulae are obtainable for certain contributions and otherwise the limits of large and small anisotropy (for the pure vacuum case) and large spatial volume or small anisotropy (for the case with a positive cosmological constant) are considered. For the pure vacuum case we find no semiclassical components which would correspond to Lorentzian universes. For the case with a cosmological constant the Hartle-Hawking boundary conditions formally constrain one of the parameters in the Lorentzian solutions to be purely imaginary. Possible interpretations of this imaginary parameter are ...
Energy Technology Data Exchange (ETDEWEB)
The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.
1990-04-15
An PB?-73C vacuum spark gap with a control circuit based on an inductive energy storage
British Library Electronic Table of Contents (United Kingdom)
The design and operating principle of a small (50 mm in diameter and 100 mm in height) ???-73C vacuum spark gap are described. It is shown that it can be efficiently switched using a control circuit with a low (?900 V) supply voltage, which is based on an inductive energy storage and a diode opening switch that forms a high-voltage igniting pulse with a rise time of nanosecond duration. The ???-73C switching process is investigated at different rise times of igniting voltage pulses and different igniting current amplitudes. The results of tests of the spark gap operating in regimes of switching current pulses with an amplitude of 12 kA and a rise time of 800 ns are presented.
2011-01-01
The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.
1990-04-15
A pump-probe XFEL particle injector for hydrated samples
We have developed a liquid jet injector system that can be used for hydrated sample delivery at X-ray Free Electron Laser (XFEL) sources and 3rd generation synchrotron sources. The injector is based on the Gas Dynamic Virtual Nozzle (GDVN), which generates a liquid jet with diameter ranging from 300 nm to 20 {\\mu}m without the clogging problems associated with conventional Rayleigh jets. An improved nozzle design is presented here. A differential pumping system protects the vacuum chamber and an in-vacuum microscope allows observation of the liquid jet for diagnostics while it is being exposed to the X-ray beam. A fiber optically coupled pump laser illuminating the jet is incorporated for pump-probe experiments. First results with this injector system have been obtained at the LCLS.
2011-01-01
International Nuclear Information System (INIS)
The behaviour of the packaging materials under radiation field has a great importance in radiation processing, because, in most cases, they are finally responsible for the preservation of the beneficent changes achieved in irradiated products. For example, in radiation sterilisation and food irradiation, the packages must preserve the sterilisation, respectively the sanitisation. They must preserve also the physical barrier feature. The radiation effects on plastics were extensively studied in the last decades for nuclear industry and more recently for radiation processing. The two major effects of nuclear radiation on polymeric materials are the degradation and cross-linking. The degradation consists in breaking of macromolecules after interaction with nuclear particles, amplified by the free radicals which persist long periods, especially in crystalline polymers. Oxygen could penetrate the sample and interact with free radicals so that the ...
International Nuclear Information System (INIS)
Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from 100eV to 1keV and doses ...
2005-08-01
Study of transient enhanced dopant diffusion in silicon and proposed limiting methods
International Nuclear Information System (INIS)
The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed
2001-09-01
Energy Technology Data Exchange (ETDEWEB)
Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. Diffusion ...
1999-07-01
International Nuclear Information System (INIS)
Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. Diffusion ...
1998-05-24
Processing and properties of Nb-Ti-base alloys
Energy Technology Data Exchange (ETDEWEB)
The processing characteristics, tensile properties, and oxidation response of two Nb-Ti-Al-Cr alloys were investigated. One creep test at 650 C and 172 MPa was conducted on the base alloy, which contained 40Nb-40Ti-10Al-10Cr. A second alloy was modified with 0.11 at.% C and 0.07 at.% Y. Alloys were arc melted in a chamber backfilled with argon, drop cast into a water-cooled copper mold, and cold rolled to obtain a 0.8-mm sheet. The sheet was annealed at 1,100 C for 0.5 h. Longitudinal tensile specimens and oxidation specimens were obtained for both the base alloy and the modified alloy. Tensile properties were obtained for the base alloy at room temperature, 400, 600, 700, 800, 900, and 1,000 C and for the modified alloy at room temperature, 400, 600, 700, and 800 C. Oxidation tests the base alloy and modified alloy, as measured by weight change, were carried out at 600, 700, 800, and 900 C. Both the base alloy and the modified alloy were extremely ductile and were ...
1993-08-01
Processing and properties of Nb-Ti based alloys
Energy Technology Data Exchange (ETDEWEB)
The processing characteristics, tensile properties, and oxidation response of two Nb-Ti-Al-Cr alloys were investigated. One creep tests at 650{degrees}C and 172 MPa was conducted on the base alloy which contained 40Nb-40-Ti-10Al-10Cr. A second alloy was modified with 0.11 at. % carbon and 0.07 at. % yttrium. Alloys were arc melted in a chamber backfilled with argon, drop cast into a water-cooled copper mold, and cold rolled to obtain a 0.8-mm sheet. The sheet was annealed at 1100{degrees}C for 0.5 h. Longitudinal tensile specimens and oxidation specimens were obtained for both the base alloy and the modified alloy. Tensile properties were obtained for the base alloy at room temperature, 400, 600, 700, 800, 900, and 1000{degrees}C, and for the modified alloy at room temperature, 400, 600, 700, and 800{degrees}C. Oxidation tests on the base alloy and modified alloy, as measured by weight change, were carried out at 600, 700, 800, and 900{degrees}C. Both the base ...
1992-01-01
Pitting corrosion resistance of silicon-implanted stainless steels
International Nuclear Information System (INIS)
The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).
International Nuclear Information System (INIS)
Optical absorption measurements show that substitutional H"- ions, that is, protons with two electrons on anion sites, are thermally more stable than anion vacancies when thermochemically reduced CaO crystals are annealed in a reducing atmosphere. The H"- ions are identified by the infrared vibrational modes observed at 880 and 911 cm"-"1.
1985-03-01
Energy Technology Data Exchange (ETDEWEB)
The electrochemical dissolution behaviour of armco-iron and of the steels C15, C45, C60 and 100Cr6 in concentrated sodium chloride media has been investigated. Anodic metal dissolution experiments have been carried out using the flow channel cell (parallel plate reactor), the rotating cylinder electrode (RCE) and the capillary cell. The microstructure of the steel has been varied through variation of carbon content and heat treatment (e.g. soft annealed with globular carbides or pearlitic). Current-efficiency values have been obtained by gravimetric measurements in the current-density range from i=5 to 60 A/cm{sup 2}. For the soft annealed steels, the divalent ferrite dissolution in combination with electroless cementite removal dominates. For the pearlitic steels, the occurrence of oxygen evolution electronically conductive metal carbides or trivalent ferrite dissolution, depending on the current density applied, was detected. Microstructure ...
2002-10-01
Modeling of the kinetics of dislocation loops
Energy Technology Data Exchange (ETDEWEB)
The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.
1999-01-01
International Nuclear Information System (INIS)
A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B C1.1 base metal irradiated to a dose of 4.84x10"1"8 n/cm"2 at about 380 deg C. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature of 280-305 deg C. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy aggromeration and the annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in ...
Ultra high vacuum test setup for electron gun
Energy Technology Data Exchange (ETDEWEB)
Ultra High Vacuum (UHV) test setup for electron gun testing has been developed. The development of next generation light sources and accelerators require development of klystron as a radio frequency power source, and in turn electron gun. This UHV electron gun test setup can be used to test the electron guns ranging from high average current, quasi-continuous wave to high peak current, single pulse etc. An electron gun has been designed, fabricated, assembled and tested for insulation up to 80 kV under the programme to develop high power klystron for future accelerators. Further testing includes the electron emission parameters characterization of the cathode, as it determines the development of a reliable and efficient electron gun with high electron emission current and high life time as well. This needs a clean ultra high vacuum to study these parameters particularly at high emission current. The cathode emission current, work function and ...
2008-05-01
Transition of rotating Bianchi type-IX cosmological model into an inflationary era
Energy Technology Data Exchange (ETDEWEB)
A Bianchi type-IX cosmological model has been found as a solution of Einstien's vacuum field equations with a cosmological constant. The solution represents a rotating generalziation fo the de Sitter universe. This universe shows a transition to exponential expansion and the vorticity begins to decay exponentially at the grand-unified-theory time. The point of time for this transition is independent of the magnitude of the vorticity. During the Guth inflationary era the vorticity decays by a factor of the order 10 US.
1986-02-15
Transition of rotating Bianchi type-IX cosmological model into an inflationary era
International Nuclear Information System (INIS)
A Bianchi type-IX cosmological model has been found as a solution of Einstien's vacuum field equations with a cosmological constant. The solution represents a rotating generalziation fo the de Sitter universe. This universe shows a transition to exponential expansion and the vorticity begins to decay exponentially at the grand-unified-theory time. The point of time for this transition is independent of the magnitude of the vorticity. During the Guth inflationary era the vorticity decays by a factor of the order 10"-"1"4"2.
The physics of tachyons. Pt. 2
International Nuclear Information System (INIS)
This paper extends the development of a new formulation of the theory of tachyons to encompass the dynamics of tachyons. Energy and momentum are discussed along with the proper mass of a tachyon. The transformation of force in extended relativity (ER) is derived. Acceleration in ER is also discussed, as well as the relationship between force and acceleration. Two simple examples relating to the motion of a charged tachyon are discussed, followed by a brief explanation of why tachyons cannot emit Cerenkov radiation in a vacuum. 13 refs., 3 figs.
Tachyons: may they have a role in elementary particle physics
International Nuclear Information System (INIS)
The possible role of space-like objects in elementary particle physics (and in quantum mechanics) is reviewed and discussed, mainly by exploiting the explicit consequences of the peculiar relativistic mechanics of Tachyons. Particular attention is paid: (i) to tachyons as the possible carriers of interactions; (ii) to the possibility of ''vacuum decays'' at the classical level; (iii) to a Lorentz-invariant bootstrap model; (iv) to the apparent shape of the tachyonic elementary particles and its possible connection with the de Broglie wave-particle dualism. (author).
Tachyons and the radiation of an accelerated charge
Energy Technology Data Exchange (ETDEWEB)
The motion of an accelerated charge in a vacuum is analyzed, via the superposition principle and Fourier analysis, into uniform-motion components, which include bradyonic as well as tachyonic contributions. It is shown that the former contribute only to the induction fields whereas the latter are the source of the radiation emitted by the charge, via the Sommerfeld-Cerenkov mechanism. This result calls for a reexamination of some recently formulated theories of superluminal particles.
1982-10-15
Review of ion-based coating processes derived from the cathodic arc
International Nuclear Information System (INIS)
The cathodic vacuum arc provides a means of producing large currents of positive ions of a wide variety of materials. These ions can be utilized to produce coatings with improved properties such as higher density and adhesion. The processing is particularly useful in reactive deposition of ceramic coatings having excellent stoichiometry. In this review, emerging aspects of the technology are emphasized.
Quantum chaos in the mixmaster universe
Energy Technology Data Exchange (ETDEWEB)
A Monte Carlo simulation of the vacuum Bianchi type-IX (mixmaster) cosmology yields a significant correlation between large universe volume and high anisotropy. An analog of the model's chaotic classical behavior is seen in the break up of the universe wave function at large volume into fingers in the corners of the minisuperspace anisotropy potential.
1989-04-15
Preparation of Cluster States for Many Atoms in Cavity QED
International Nuclear Information System (INIS)
We propose a scheme for the generation of the cluster states for many atoms in cavity QED. In our scheme, the atoms are sent through nonresonant cavity fields in the vacuum states. The cavity fields are only virtually excited and no quantum information will be transferred from the atoms to the cavity fields. The advantage is that the cavities are suppressed during the procedure. The scheme can also be generalized to the ion trap system.
2007-07-15
Photodetachment of negative ion beams in the presence of a background gas
Energy Technology Data Exchange (ETDEWEB)
To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.
1987-03-01
Optical measurement of electron bunching in vacuum
International Nuclear Information System (INIS)
We report the homodyne detection of phase modulation sidebands induced on a laser beam by a coherently bunched electron beam. This provides a sensitive and nonperturbing measurement of complex Fourier time series components of the electron density. A proof-of-principle measurement of the microwave frequency component of electron density in a crossed-field device, which agrees well with a calculation of the same quantity, is reported.
On condensation of closed-string tachyons
Energy Technology Data Exchange (ETDEWEB)
An F-theory dual of a non-supersymmetric orientifold is considered. It is argued that the condensation of both open and closed string tachyons in the orientifold corresponds to the annihilation of branes and antibranes in the F-theory dual. One likely end-point of tachyon condensation is thus expected to be the vacuum of Type-IIB superstring. Some speculations are presented about the F-theory dual of the bosonic string and tachyon condensation thereof.
2002-09-09
New development of external-PIXE system using a differential pumping technique
International Nuclear Information System (INIS)
A new external-PIXE system utilizing a differential pumping technique, which can completely protect the accelerator and vacuum pumps when the exit foil breaks down, has been developed. Applications to analyses of liquid and heavily-outgassing samples were successfully achieved. Also, experiments for evaluating the efficiency of the system were performed and results will be presented. (author)
1999-09-01
Multidimensional extension of the Bianchi type-IX cosmology
Energy Technology Data Exchange (ETDEWEB)
A higher-dimensional homogeneous spacetime is investigated satisfying the vacuum Einstein equations. It is assumed that the algebra of Killing vectors L admits a non-trivial Levi decomposition L=N+so(3), i.e. that the subalgebras N and so(3) do not commute. It is found that the model behaves in a non-chaotic way and cosmological dimensional reduction inevitably occurs. This model completes all the possible types within the class of higher-dimensional extensions of Bianchi type-IX cosmology.
1988-06-09
Magnetic diagnostic of beta poloidal and internal inductance of plasma in the TCA/BR tokamak
Energy Technology Data Exchange (ETDEWEB)
This report continues the studies of simplified methods, of magnetic diagnostics in application to TCA/BR tokamak. Here we study the accuracy of known formula for {beta}{sub 1} + l{sub 1}/2 determination from the poloidal magnetic field asymmetry. Errors of the diamagnetic measurements due to vibrations of the vacuum vessel are also considered. (author). 3 refs., 1 fig., 1 tab.
1996-12-31
In situ air stripping using horizontal wells. Innovative technology summary report
Energy Technology Data Exchange (ETDEWEB)
In-situ air stripping employs horizontal wells to inject or sparge air into the ground water and vacuum extract VOC`S from vadose zone soils. The horizontal wells provide better access to the subsurface contamination, and the air sparging eliminates the need for surface ground water treatment systems and treats the subsurface in-situ. A full-scale demonstration was conducted at the Savannah River Plant in an area polluted with trichloroethylene and tetrachloroethylene. Results are described.
1995-04-01
Heavy and light quarks in the instanton vacuum
Assuming the gluon field is well approximated by instanton configurations we derive a light quarks determinant and calculate its contribution to the specific heavy quarks correlators -- namely, the heavy quark propagator and heavy quark-aniquark correlator, receiving the instanton generated light-heavy quarks interaction terms contributions. With these knowledge we calculate the light quark contribution to the interaction between heavy quarks, which might be essential for the properties of a few heavy quarks systems.
2011-01-01
Emittance of investment casting molds
Energy Technology Data Exchange (ETDEWEB)
This document describes measurements of the directional spectral emittance of four ceramic mold materials. The work was performed with the samples at {approximately} 900{degree}C in a vacuum vessel pumped to {approximately}3 {times} 10{sup {minus}6}Torr. Results conform to expectations derived from prior work done with similar samples.
1994-07-15
Design and fabrication of a traveling-wave muffin-tin accelerating structure at 90 GHz
Energy Technology Data Exchange (ETDEWEB)
A prototype of a muffin-tin accelerating structure operating at 32 times the SLAC frequency (2.856 GHz) was built for research in high gradient acceleration. A traveling-wave design with single input and output feeds was chosen for the prototype which was fabricated by wire electrodischarge machining. Features of the mechanical design for the prototype are described. Design improvements are presented including considerations of cooling and vacuum.
1997-05-01
DC CHARACTERIZATION OF HIGH GRADIENT MULTILAYER INSULATORS
Energy Technology Data Exchange (ETDEWEB)
We have developed a novel insulator concept that involves the use of alternating layers of conductors and insulators with periods less than 1 mm. We have demonstrated that these structures perform 2 to 5 times better than conventional insulators in long pulse, short pulse, and alternating polarity applications. We present new testing results showing exceptional behavior at DC, with gradients in excess of 110kV/cm in vacuum.
2005-05-26
Canonical Gravity with Fermions
Canonical gravity in real Ashtekar-Barbero variables is generalized to allow for fermionic matter. The resulting torsion changes several expressions in Holst's original vacuum analysis, which are explicitly displayed here. This in turn requires adaptations to the known canonical (loop) quantization of gravity coupled to fermions, which is discussed on the basis of the classical analysis.
2007-01-01
A multidimensional extension of the Bianchi type-IX cosmology
International Nuclear Information System (INIS)
A higher-dimensional homogeneous spacetime is investigated satisfying the vacuum Einstein equations. It is assumed that the algebra of Killing vectors L admits a non-trivial Levi decomposition L=N+so(3), i.e. that the subalgebras N and so(3) do not commute. It is found that the model behaves in a non-chaotic way and cosmological dimensional reduction inevitably occurs. This model completes all the possible types within the class of higher-dimensional extensions of Bianchi type-IX cosmology. (orig.).
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