International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

Energy Technology Data Exchange (ETDEWEB)

The electronic structure of the clusters (V/sub 3/Si/sub 4/)/sup 12 -/, (Nb/sub 3/Sn/sub 4/)/sup 12 -/(Mo/sub 3/Ge/sub 4/)/sup 15 -/ in crystalline V/sub 3/Si, Nb/sub 3/Sn, Mo/sub 3/Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered.

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Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended ...

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Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

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We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess ...

International Nuclear Information System (INIS)

We have performed molecular dynamics simulations of radiation damage in fused silica. In this study, we discuss the role of successive cascade overlap on the saturation and self-healing of oxygen vacancy defects in the amorphous fused silica network. Furthermore, we present findings on the topological changes in fused silica due to repeated energetic recoil atoms. These topological network modifications consistent with experimental Raman spectroscopic observation on neutron and ion irradiated fused silica are indicators of permanent densification that has also been observed experimentally.

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A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the ...

International Nuclear Information System (INIS)

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

International Nuclear Information System (INIS)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

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Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce ...

International Nuclear Information System (INIS)

In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended ...

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying ...

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In scattering of channeled particles by point defects and in emission of gamma rays in the spontaneous-radiation spectral region conditions are attained where the momentum transferred to the defect is taken up by the crystal as a whole. This leads to coherent and interference effects in the radiation from the crystal defects. When the longitudinal momentum transferred is zero, an induced radiation effect appears in the transitions between the states of transverse motion.

International Nuclear Information System (INIS)

Data on the recovery of Tsub(c) for several neutron irradiated A-15 compounds are presented. A model for the mechanism of recovery is suggested and has been applied to isothermal annealing data at 550"0C on a sample of Nb_3Ge and to isochronal annealing (200"0C-900"0C) data on V_3Si, Nb_3Ge and Nb_3Sn subjected to varying doses of fast neutrons and on Nb_3Al of various compositions subjected to the same dose. The recovery is assumed to take place by vacancy assisted reordering and occurs in several stages. The major low temperature stage is attributed to irradiation induced vacancies, while at high temperatures there are depleted and recovery is ascribed to the motion of thermal equilibrium vacancies. Activation energies deduced for these processes, approximately 1 eV for vacancy motion and approximately 1-2 eV for vacancy formation, are consistent with what is ...

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A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of ...

International Nuclear Information System (INIS)

The defect-induced effect on superconducting transition temperature T_c of A-15 compounds is examined. T_c is found from the Eliashberg equations which take into account the defect-induced changes in the electron-phonon spectral function and electron density of states. The dependence of T_c on the defect type in the superconductor is obtained.

International Nuclear Information System (INIS)

The hardening and embrittlement of reactor pressure vessel (RPV) steels is of great concern in the actual nuclear power plant life assessment. This embrittlement is caused by irradiation-induced damage, like vacancies, interstitials, solutes and their clusters. The current procedure to estimate material properties for the irradiated pressure vessels is based on Charpy-V tests of identical material located at the inner shell of the reactor. But the reason for the embrittlement of the materials is not yet totally known. The real nature of the irradiation damage should thus be examined as well as its evolution in time. Fe-Cu binary alloys are often used to mimic the behaviour of such steels. Their study allows. Identifying some of the defects responsible of the hardening, especially when compared to pure iron or C-micro-alloyed iron. More recently the influence of manganese and nickel in low-Cu RPV steels has become a ...

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The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f{sub A}. Accurate knowledge of f{sub A} is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f{sub A} is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f{sub A} without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f{sub Sb}{le}0.012 and f{sub B}{ge}0.98 at temperatures of {approximately}800{degree}C, which are the strictest bounds reported to date. Our results are in ...

International Nuclear Information System (INIS)

It is shown that low-frequency elastic vibrations of near-surface planar defects cause high-frequency ultrasonic radiation in surrounding air. The frequency conversion mechanism is concerned with contact nonlinearity of the defect vibrations and provides efficient generation of air-coupled higher-order ultraharmonics, ultrasubharmonics, and combination frequencies. The nonlinear air-coupled ultrasonic emission is applied for location and high-resolution imaging of damage-induced defects in a variety of solid materials.

International Nuclear Information System (INIS)

The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.

International Nuclear Information System (INIS)

The evolution of metallic substance atomic structure is studied on temperature variation including crystal heating up to melting points, a crystal- liquid phase transition and initiation of a high-density liquid specific structure. It is marked that heat induced changes of simple metal structure can be described as changes around a natural elementary cell which is common for both a crystal and a liquid and consists of a central atom and Z_1 atoms of the first coordination sphere. On this basis the vacancy model of melting is verified. Concentrations of melting vacancies are determined by coordination numbers in the form of Z_1/(1+Z_1)"2 which are the same for both a crystal and a natural elementary cell. The size of natural elementary cells is in an agreement with that of the coordination sphere featured in the liquid and phase transition statistical theory. Calculated data are given for a number of metals, Cs, Eu, Ni, V ...

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A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) ...

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Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary collision predictions). Upon annealing of the resulting damage microstructure at 1100K ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

CERN Document Server

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

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We provide two examples to illustrate how electronic structure calculations contribute to our understanding of vacancies and their role in determining material properties. Diffusion and elctromigration in aluminium are known to depend strongly on vacancies. Electronic structure calculations show that the vacancy-impurity interaction oscillates with distance, and this leads to an explanation for both the increased elctromigration resistance and the slow impurity diffusion for copper in aluminium. Calculations of vacancies in plutonium have been used in conjunction with positron annihilation lifetime measurements to identify the presence of helium-filled vacanies. Helium stabilization of vacancies can provide the precursors for subsequent vacancy-related changes in materials properties.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

UK PubMed Central (United Kingdom)

Cancer cells constantly adapt to oxidative phosphorylation (OXPHOS) suppression resulting from hypoxia or mitochondria defects. Under the OXPHOS suppression, AMP-activated protein kinase (AMPK) regulates...Full Text Available

UK PubMed Central (United Kingdom)

In rats, damage to neuronal populations in some brain regions occurs in response to neonatal alcohol exposure coinciding with the period of rapid brain growth. These alcohol-induced defects...Full Text Available

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

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In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation ...

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As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing ...

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One third of the microstructure of glassy carbon (GC) consists of closed pores. Density measurements indicate that the total pore volume depends only on the heat treatment temperature and not on the heat treatment time, a characteristic of coarsening. The kinetics of coarsening of these pores on heat treatment has been investigated by analyzing the changes in specific surface area of the pores as determined by the small angle X-ray scattering (SAXS) technique. A part of the surface area change is due to thermal expansion induced microcracking. Both the superposition method after correcting the thermal expansion induced surface area change and the curve fitting method give an activation energy of 64 +/- 10 kcal/mole. This value is compared with the activation energies of various rate processes in graphite. A model of coarsening of the pores based on a vacancy migration mechanism is proposed.

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Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be ...

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

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The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four.

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The influence of surface oxides of variable composition and nonstoichiometry formed at high temperatures in air on the general corrosion resistance of ferritic chromium steel type 08H17T (Fe-17Cr-1Ti) in weak sulfuric acid has been studied. Anodic passive films formed on steel with different pretreatments have also been examined. The surface oxide of nearly stoichiometric composition formed at 300 C provides for the passive state of steel in sulfuric acid despite its depletion by chromium when compared with that for nonstoichiometric Cr-enriched oxide formed at 600 C. The dissolution and transformation of nonstoichiometric thermal surface oxide in sulfuric acid appear to take place through defect sites, {minus}Fe{sup 2+} ions, and oxygen vacancies of the n-type conductor. The passive film formed on the nonstoichiometric oxide film, which had been produced at 600 C, was found to be more susceptible to open-circuit breakdown compared to the ...

International Nuclear Information System (INIS)

Generally, neutron, ion and electron Irradiations cause a substantial amount of hardening and significantly alter the deformation behavior of metals and alloys at relatively low irradiation temperatures. A radiation hardening is caused by the formation of microstructural defects such as dislocation loops, voids and precipitates under irradiation. Therefore, it is important to have a better knowledge of the irradiation induced microstructural defects under irradiation condition. As a part of the National mid- and long-term atomic energy R and D program, we are dealing with the radiation hardening behavior in Fe-Cr binary alloy. Fe-Cr binary alloy is a base alloy of Ferritic/Martensitic steel(F/M steel) planning to use for the Gen IV nuclear system. In this work, we investigated the radiation hardening and microstructural defect evolution in ion irradiated Fe-Cr alloys with irradiation temperature using ...

International Nuclear Information System (INIS)

Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, ...

International Nuclear Information System (INIS)

Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed ...

International Nuclear Information System (INIS)

Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 by the irradiation. From these results we can find that irradiation with the X-ray ...

UK PubMed Central (United Kingdom)

Dendritic cells (DC) are the most potent antigen-presenting cells and play a central role in the induction of antiviral immune responses. Recently, we have shown that monocyte-derived DC (MoDC) from...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

There is proposed the nonlinear model of dose dependence saturation of the yield strength on the base of the vacancy and interstitial barrier interaction in this work. Processes of mutual recombination of vacancy and interstitial barriers and formation of vacancy and interstitial clusters are taken into consideration. In the framework of the model, the analytical equations corresponding to the evolution of the barrier densities and yield strength are obtained. It is shown that the yield strength of irradiated materials decreases with the increasing intensity of barrier recombination processes, the dependence being nonlinear. Also it is shown that the model is valid both for low doses and large doses on the stage of radiation hardening.

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Energy Technology Data Exchange (ETDEWEB)

The purpose of this paper is to evaluate the role of the strain-relaxation processes on the leakage current of embedded SiGe S/D junctions. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured to further investigate the relaxation degree of embedded SiGe S/D junctions in the regime where partial relaxation by misfits dislocations is assumed, yielding a reduction of the leakage current density. Further, the impact of the ion implantation-related defects on the electrical performance is discussed. The analysis is complemented with structural characterization based on High Resolution Transmission Electron Microscopy (HRTEM) and Nomarski microscopy. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

International Nuclear Information System (INIS)

The surface permeability of concrete walls and floors in houses was measured with a specially designed permeameter, based on measuring the air-flow induced by a pressure difference across a temporary test seal applied to a surface. The permeability of bulk concrete is 10"-"1"6 m"2. Areas free of surface defects had permeability ranging from 10"-"1"4 to 10-"1"6 m"2. However, surface defects are common on concrete wall surfaces, which increase the permeability to >10"-"1"2 m"2. This is too high for standard seal designs to be adequate as the only method of soil gas and radon exclusion. Satisfactory seals require either extended contact width or mechanical removal of the surface layer. (orig.). (2 figs., 1 tab.).

International Nuclear Information System (INIS)

The rate of residual-resistivity increase and the isochronal recovery have been studied on the fcc metals Al, Ni, Cu, Pd, Ag, Pt, and Au irradiated at 4.6 K with reactor neutrons to a dose of about 10"1"9 (fast neutrons)/cm"2. The rate of resistivity increase is nonlinear as a function of irradiation-induced resistivity; computer analysis shows that the data are best fitted with an erxpression having up to third-order terms in #DELTA#rho. There are deviations from simple damage-rate theory in all cases, but an anomalous negative deviation from a linear law (convex curvature) is observed in Ni, Pd, Pt (and Fe). This behavior is most probably caused by a decrease of the specific Frenkel-defect resistivity due to defect clustering, an effect which should contribute in all metals after fast-neutron irradiation to high doses. Saturation values of resistivity and defect concentration as well as recombination ...

International Nuclear Information System (INIS)

Full text of publication follows: Understanding the dynamic irradiation effects on silica glasses is important for developing the diagnostic systems used in fusion and fission environments. While fundamental defects having an un-pared electron such as the E' center have been extensively studied, the neutral oxygen deficiency defects have been insufficiently clarified for lack of the detection methods. The ion induced luminescence is one of the probes that can be used to detect non-paramagnetic defects, and to observe creation and annihilation behavior dynamically. In the present study, we examined the characteristics of the ion induced luminescence such as energy, fluence flux and temperature dependence of the luminescence efficiency to analyze damage process quantitatively. Samples of SiO2 glasses were commercially available fused and synthesized silica glasses, produced by Toshiba ...

International Nuclear Information System (INIS)

A review of the performance of steam generator tubes in 116 water-cooled nuclear power reactors showed that tubes were plugged at 54 (46 percent) of the reactors. The number of tubes removed from service decreased from 4 692 (0.30 percent) in 1981 to 3 222 (0.20 percent) in 1982. The leading causes of tube failures were stress corrosion cracking from the primary side, stress corrosion cracking (or intergranular attack) from the secondary side and pitting corrosion. The lowest incidence of corrosion-induced defects from the secondary side occurred in reactors that have used only volatile treatment, with or without condensate demineralization.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

International Nuclear Information System (INIS)

The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10"-"4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.

International Nuclear Information System (INIS)

Angular dependence from L_3-subshell to M-shell vacancy transfer probabilities for selected heavy elements from Au to U have been measured by using a Si(Li) detector coupled to a model 1024 computerized multi-channel analyzer. Because the angular dependence from L_3-subshell to M-shell vacancy transfer probabilities is not found in the literature, to the best of our knowledge there are no experimental values for worked elements. Therefore, the results for the elements obtained in the present study constitute the first experimental measurements; the comparison has been not made with other experimental and theoretical results. It has been observed that angular dependence from L_3-subshell to M-shell vacancy transfer probabilities increase with increasing cos #theta#.

International Nuclear Information System (INIS)

Experimental observations related to the initiation of plastic deformation in metals and alloys irradiated with fission neutrons have been analyzed. The experimental results, showing irradiation-induced increase in the upper yield stress followed by a yield drop and plastic instability, cannot be explained in terms of conventional dispersed-barrier hardening because (a) the grown-in dislocations are not free, and (b) irradiation-induced defect clusters are not rigid indestructible Orowan obstacles. A new model called 'cascade-induced source hardening' is presented where glissile loops produced directly in cascades are envisaged to decorate the grown-in dislocations so that they cannot act as dislocation sources. The upper yield stress is related to the breakaway stress which is necessary to pull the dislocation away from the clusters/loops decorating it. The magnitude of the breakaway stress has been ...

Energy Technology Data Exchange (ETDEWEB)

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be ...

Energy Technology Data Exchange (ETDEWEB)

For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe{sup +}, 360 keV He{sup +}, and 180 keV H{sup +} simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ...

Energy Technology Data Exchange (ETDEWEB)

The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. ...

Science.gov (United States)

The field of stem cell research was revolutionized with the advent of induced pluripotent stem cells. By reprogramming somatic cells to pluripotent stem cells, most ethical concerns associated with the use of embryonic stem cells are overcome, such that many hopes from the stem cell field now seem a step closer to reality. Several methods and cell sources have been described to create induced pluripotent stem cells and we discuss their characteristics in terms of feasibility and efficiency. From these cells, cardiac progenitors and cardiomyocytes can be derived by several protocols and most recent advances as well as remaining limitations are being discussed. However in the short time period this technology has been around, evidence emerges that induced pluripotent stem cells may be more prone to genetic defects and maintain an epigenetic memory and thus may not be entirely the same as embryonic stem ...

Energy Technology Data Exchange (ETDEWEB)

Enhanced superlattice disordering in nonstoichiometric AlAs/GaAs quantum wells exhibits weak temperature dependence because of the decay of the supersaturated concentration of group-III vacancies. We present a formalism for transient enhanced diffusion in nonstoichiometric materials with which we can extract migration enthalpies {ital H}{sub {ital m}} by assuming that the vacancy decay is thermally activated with an enthalpy {ital H}{sub {ital a}}. By analyzing the electroabsorption from the quantum-confined Stark effect for a set of isochronal and isothermal anneals, we extract a migration enthalpy {ital H}{sub {ital m}}=(1.8{plus_minus}0.2) eV for group-III vacancies, as well as an activation enthalpy {ital H}{sub {ital a}}=(0.7{plus_minus}0.2) eV for vacancy annihilation. {copyright} {ital 1996 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and ...

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Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

British Library Electronic Table of Contents (United Kingdom)

Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 1013 ions/cm2)?was?observed. Nanoindentation tests show a strong ion-induced increase of hardness (up?to 150?200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the?depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating i...

International Nuclear Information System (INIS)

Full text of publication follows: The effect of neutron irradiation on the thermal conductivity of silicon carbide can be dramatic depending on the irradiation temperature and fluence the material is subjected to, and may be a critical factor defining it's use in fusion systems. Historically there have been several papers describing the effect of neutron irradiation on thermal conductivity degradation of SiC, predominately in the low to intermediate temperature ranges. Practically all of this work has been at temperatures lower than the application temperature for SiC being considered by the conceptual fusion reactors. This paper provides new data on the thermal conductivity of high quality CVD silicon carbide irradiated in a range of doses and temperature spanning the proposed fusion reactor temperature range. Specifically, an irradiation was carried out from fractions milli-dpa to approximately 8 dpa in the HFIR with irradiation temperatures ranging from 80-1600 deg. C. Results of ...

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In this paper we discuss the results of thermoluminescence (TL) studies carried out on freshly quenched crystals of KBr doped with {approx} 50 ppm of Eu{sup 2+} ions which were X-irradiated at room temperature. The TL glow curve of this phosphor material consists of three glow peaks at 355, 376 and 398 K whose intensities increased as a function of X-irradiation time. The TL glow peaks were analyzed by the total curve-fitting method in order to obtain the characteristic parameters; activation energy, pre-exponential factor and kinetic order. The spectral character of the emission recorded during thermoluminescence was found to be the same for all glow peaks and consists of a broad band centered at {approx} 420 nm. It is proposed that the model of the TL process most consistent with our experimental results is one in which the Eu{sup 2+} impurity acts as an electron trap during the irradiation process and that the radiation induced center (partner of an center) and ...

Energy Technology Data Exchange (ETDEWEB)

The effect that different chemical and physical atomic environments can have on the relative intensities of radiative electron transitions from the filling of K shell vacancies was investigated. The method used involved the detection of photoionization induced X-ray fluorescence. An experimental system based on a hyper pure germanium detector (HPGE) was used to measure the relative K-L and K-M X-ray yields from the photofluorescence of a series of lanthanide elements and compounds. A background subtraction and peak integration strategy was employed which accounted for scattering in the samples and scattering of the flux from the radioisotope photoionization sources. Analysis of the data resulted in a tabulation of relative K/sub ..beta..//K/sub ..cap alpha../ X-ray intensity ratios. The measured relative K/sub ..beta..//K/sub ..cap alpha../ X-ray intensity ratios were compared to the calculated values predicted by the theoretical development of ...

Energy Technology Data Exchange (ETDEWEB)

Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output ...

International Nuclear Information System (INIS)

Fe-Cu binary alloys are often used to mimic the behaviour of reactor pressure vessel steels. Their study allows identifying some of the defects responsible for irradiation-induced hardening. But recently the influence of manganese and nickel in low-Cu steels has been found to be important as well. In contrast with existing models found in the literature, which predict that hardening saturates after a certain dose, Fe alloys containing nickel and manganese irradiated in a material test reactor (BR2) show a continuous increase of hardening, up to doses equivalent to about 40 years of operation. Considerations based on positron annihilation spectroscopy analyses suggest that the main objects causing hardening in Cu-free alloys are most probably self-interstitial clusters decorated with manganese. In low-Cu reactor pressure vessel steels and in Fe-CuMnNi alloys, the main effect is still due to Cu-rich precipitates at low doses, but the role of ...

International Nuclear Information System (INIS)

Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and #left brace#113#right brace# defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration ...

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The theoretical treatment of the relation between the critical angle of planar channeling and the characteristics of crystal lattice defects is carried out. The predictions are made about some typical forms of the critical angle dependence on the mean-square static displacement produced by defects, and then these predictions are detailed for the cases of homogeneous disordering, spherical clusters of point defects and dislocation loops. Analytical results are supported by the exact computer calculations for the defects in the intermetallic A-15 compounds.

UK PubMed Central (United Kingdom)

Congenital deformities involving the coverings of the nervous system are called neural tube defects (NTDs). NTD can be classified as neurulation defects, which occur by stage 12, and postneurulation...Full Text Available

UK PubMed Central (United Kingdom)

Familial defective apolipoprotein (apo) B-100 is a genetic disease that leads to hypercholesterolemia and to an increased serum concentration of low density lipoproteins that bind defectively to the...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The {delta} {yields} {alpha}{prime} martensitic transformation in Pu-1.9 at.% Ga occurs when the alloy is cooled below about -100 C. This transformation exhibits anomalous behavior, where the isothermal transformation proceeds atypically with double-C kinetics. Recent work has revealed that an ambient temperature isothermal hold (referred to as conditioning) prior to the transformation has different effects depending on whether transformation proceeds in the upper- or lower-C of the double-C: the amount of transformation is increased with conditioning in the upper-C, while the transformation in the lower-C seems to be engendered by conditioning. The mechanism by which conditioning affects the low-temperature {delta} {yields} {alpha}{prime} transformation is thus of great importance to understanding the transformation itself as well as the general circumstances that can affect a martensitic phase transformation. Using differential scanning calorimetry measurements, ...

Science.gov (United States)

It is suggested that the large reduction of the superconducting transition temperature Tc due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility ?, the elastic modulus Cs, the structural transformation temperature Tm and the electrical resistivity ?) is also discussed from the same point of view. We expect the anomalous temperature dependence of ?, Cs and ? will be suppressed by defects.

CERN Document Server

We prove the existence of defective secant varieties of three-factor and four-factor Segre-Veronese varieties embedded in certain multi-degree. These defective secant varieties were previously unknown and are of importance in the classification of defective secant varieties of Segre-Veronese varieties with three or more factors.

KoreaScience (Korea)

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International Nuclear Information System (INIS)

IL-4-induced Stat6 signaling is active in a variety of cell types and plays a role in cell proliferation/growth and resistance to apoptosis. Using EMSA, we identified differential IL-4/Stat6 activities in colorectal cancer cell lines, HT-29 being active Stat6"h"i"g"h phenotype and Caco-2 being defective Stat6"n"u"l"l phenotype, respectively. Active Stat6"h"i"g"h HT-29 cells exhibited resistance to apoptosis by flowcytometry and aggressive metastasis by Transwell assay compared with defective Stat6"n"u"l"l Caco-2 cells. Comparing one another using RT-PCR, Stat6"h"i"g"h HT-29 cells expressed more mRNA of anti-apoptotic and pro-metastatic genes Survivin, MDM2, and TMPRSS4, while Stat6"n"u"l"l Caco-2 cells expressed more mRNA of pro-apoptotic and anti-metastatic genes BAX, CAV1, and P53, respectively. This is the first study describing correlations of IL-4/Stat6 activities with apoptosis and metastasis in colon cancer. These ...

Energy Technology Data Exchange (ETDEWEB)

The understanding of fission product deposition in realistic steam generator conditions is needed for release estimates in PSA studies, and for the design of efficient accident management procedures. This is considered very important because primary-to-secondary leakages risk dominant sequences in many plants. Furthermore, the decay heat of the fission product deposits adds to the thermal load to the steam generator tubes also in other sequences, especially in case of cold leg leakages. This brings out the concern of induced steam generator tube ruptures in cases, where the steam generators are initially intact. The experimental data showed that the highest deposited fraction within the tubes were found in cases with lowest flow velocities. The minimum value of the deposited fraction was observed at intermediate flow velocities. With these relatively low Reynolds numbers, the results calculated with deposition models agree well with the experiments. At high ...

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect structures. A heat transfer ...

British Library Electronic Table of Contents (United Kingdom)

This paper deals with surface defects of automobile outer panels, which alter significantly the vehicle quality. Such defects occur during springback, after forming or flanging steps, and are characterized by concave depression of small amplitude over the convex shape of the part. The aim of this work is to reproduce at the laboratory scale a surface defect that occurs after flanging on a geometry similar to a door upper corner. A dedicated device has been designed in order to generate small size surface defects during flanging of metallic thin sheets. The outer surface of the sample was digitalized and the spatial geometry of the defect was evaluated from curvature change along 2D profiles. This study shows that the flanging height does not influence significantly the surface defect geome...

CERN Document Server

Within the context of space-time (D-particle) foam in string/brane-theory it is demonstrated that it is possible to generate non-extensive statistics. The D-particle foam model involves point-like brane defects (D-particles), which provide the topologically non-trivial foamy structures of space-time. The D-particles can capture and emit stringy matter and this leads to a recoil of D-particles. It is indicated how one effect of such a recoil of D-particles is a back reaction on the space-time metric of Finsler type which is stochastic. We show that such a type of stochastic space-time foam can lead to cosmological effects similar to those induced by modifications of particle distributions within the framework of Tsallis entropies. The restrictions placed on the free parameters of the Finsler type metric are obtained from solving the Boltzmann equation in this background for relic abundances of a Lightest Supersymmetric Particle (LSP) dark matter ...

International Nuclear Information System (INIS)

When the history of neutrons is considered, three large discoveries are recalled, that is, the discovery of neutrons by Chadwick in 1932, the discovery of the nuclear fission of uranium by Hahn and Strassmann in 1938, and the continuation of chain reaction in nuclear fission by Fermi and others in 1942. In neutron capture reaction, the reaction cross section can become very large. The fields of research, to which neutrons have contributed most as the experimental probe, are neutron activation analysis and neutron diffraction. The development of the prompt gamma ray analyzer at the JRR-3M in Japan Atomic Energy Research Institute is reported. This method eliminates the various defects in ordinary neutron activation analysis. By installing the cold neutron source with hydrogen cooling in the JRR-3M, the new field of research was opened. As the combination of a lead-moderated spectrometer and an electron beam type accelerator, the Kyoto University lead slowing-down ...

Energy Technology Data Exchange (ETDEWEB)

The pitting behavior of Alloy 800 was investigated as a function of temperature and prefilming in high temperature water. The pitting behavior was characterized in terms of the pitting potential and the pit density. The pitting potential decreases with increasing temperature and chloride activity. Prefilming of test coupons over a time period between 100 and 5,000 hours in ammoniated water at 300 C has no apparent influence on the pitting potential at room temperature, 180 C and 300 C. However, the number of pits in prefilmed coupons is much higher than in coupons covered with an air passive layer. The effect of prefilming on pit nucleation was investigated in more detail with regard to a model and test methods developed by Bianchi and co-workers. Density of pits in prefilmed coupons is at least one order of magnitude higher than in air passive coupons. Maximum pit density was measured after a prefilming period of 1 00 hours. The effect is discussed in terms of Bianchi`s model and in ...

International Nuclear Information System (INIS)

Neutron irradiation embrittlement of reactor pressure vessel (RPV) steels is one of the critical issues on aging management for long term operation of nuclear power plants. Mechanistic understanding of embrittlement is a key to accurate prediction of embrittlement, especially after long term operation where the mechanical test data are sparse. Since matrix hardening is the source of the embrittlement, we focus on matrix hardening of A533B bainitic pressure vessel steel. Bainitic matrix is composed of lath structure made by ferrite and carbides, therefore it is important to understand how this structure affects hardening behavior, and to understand irradiation response of each phase. As the typical dimension of lath structure of A533B is about one micron, nanoindentation technique is suitable for the estimation of hardening of each phase. MV ion accelerators were used for controlled irradiation because MeV ion irradiation can produce defects to the depth greater ...

International Nuclear Information System (INIS)

The effects of key metallurgical variables on the low fluence hardening in a set of A533B model steels were evaluated over a wide range of irradiation temperatures. Above about 163 degrees C hardening increased with higher copper and nickel contents, as is typical of the pressure vessel operating regime around 290 degrees C. However, at 121 degrees C the hardening was generally lower and unaffected by copper and nickel variations. This observation of decreased hardening with lower temperature (e.g. an open-quotes invertedclose quotes temperature dependence) is tentatively attributed to a reduced contribution of copper precipitation. Tensile data for a set of commercial steels with a range of (uncontrolled) compositions also showed minimal sensitivity to copper variations at 121 degrees C. Unlike the hardness data no systematic reductions in the yield stress increases were observed between 163 and 121 degrees C. However, the ultimate tensile strength did decrease at the lower ...

International Nuclear Information System (INIS)

Tensile properties of reduced-activation 10Cr-30Mn austenitic steels with carbon levels from 0.003 to 0.55% were investigated over the temperature range from room temperature to 873 K after neutron irradiation in the Japan Materials Testing Reactor at 573 K to 8.5x10"2"2 n/m"2. Irradiation-induced increase in yield stress increased significantly with carbon concentration up to about 0.1% and it was constant above 0.1% carbon. A high density of dislocation loops with small (below 10 nm) and large (20-30 nm) sizes formed during irradiation. The high density, small loops caused a large irradiation hardening, while the large loops contributed only slightly to irradiation hardening. It was considered that carbon atoms formed the small loops together with irradiation defects. The deformation channeling was observed in the irradiated high carbon steels, 0.11 and 0.55% carbon, but not in the very low carbon steel, 0.003% carbon, after deformation near ...

International Nuclear Information System (INIS)

The effect of the #+-# 0.75 T external magnetic field on the K_#alpha#_1, K_#alpha#_2, K_#beta#_'_1 and K_#beta#_'_2 x-ray production cross sections and radiative vacancy transfer probabilities from K-shell to L2 and L3 subshells and M-shell for ferromagnetic Nd, Gd and Dy and paramagnetic Eu and Ho have been investigated, using the 59.5 keV incident photons. K-shell fluorescence yields and K x-ray intensity ratios for these elements have been determined in the external magnetic field also. The K x-rays from different targets were detected using a high-resolution Si(Li) semiconductor detector. For B = 0, the present experimental results were compared with the experimental and theoretical data in the literature. The results show that K-shell fluorescence parameters such as photoionization cross section, fluorescence yield, radiation rates, vacancy transfer probabilities and spectral linewidth can change owing to the applied magnetic field. ...

International Nuclear Information System (INIS)

Spectral-luminescent characteristics of Sr2Y8(SiO4)6O2: Eu powder crystal phosphor with the apatite structure and high-intensity luminescence of Eu3+ ions have been studied. The charge state of europium in the samples has been characterized by means of X-ray L3-adsorption spectroscopy. It was established that Eu3+ forms two types of optical centers. Besides, luminescence of Eu2+ions was found. Reduction Eu3+#->#Eu2+ was considered, which may be due to VSr|| vacancy formation in the 4f crystal lattice position and to negative charge transfer by this vacancy to two EuY3+ ions. Thus, in the silicate lattice there exist inhomogeneously distributed oxygen-deficient centers, which are responsible for nonradiative transfer of excitation energy to Eu3+ and Eu2+ ions. To study electron-vibrational interactions in the crystal phosphor samples, their IR and Raman spectra were examined. In the luminescence spectrum of Eu2+, a series of low-intensity ...

Energy Technology Data Exchange (ETDEWEB)

A deep band of {l_brace}311{r_brace} defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the {l_brace}311{r_brace}-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {l_brace}311{r_brace} defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the {l_brace}311{r_brace}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.

British Library Electronic Table of Contents (United Kingdom)

The objective of materials research is the development of economical, safe and efficient synthesis routes that lead to the formation of a photocatalyst which is able to overcome performance problems related to particle size, crystallinity, or low surface area. Here, we report high-quality functional nanoparticles of calcium bismuth mixed oxide with 15nm nominal size corresponding to a specific surface area of 41m^2/g which were produced by single-step flame spray synthesis (FSS). The high temperature of the flame afforded creation of oxygen vacancies which were quantified by near edge X-ray absorption fine structure (NEXAFS) spectra. These two parameters, developed active surface area and created in the flame oxygen vacancies, allowed to enhance the photocatalytic activity of calcium bismu...

International Nuclear Information System (INIS)

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

UK PubMed Central (United Kingdom)

This study was designed to evaluate the suitability of a novel bioabsorbable material in treating bone defects. A poly(desaminotyrosyl-tyrosine-ethyl ester carbonate) (PDTE carbonate) membrane (thickness...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The federating theme of superconductivity has given rise to a number of experimental studies of point defects in solids as different as transition metals (V, Nb, ...), A-15 compounds (V{sub 3}Si, Nb{sub 3}Ge, ...), or perovskite-like copper oxides. Some of these experiments are presented here. (orig.).

Energy Technology Data Exchange (ETDEWEB)

We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low ...

International Nuclear Information System (INIS)

Most superconductors are quite sensitive to irradiation defects. Critical temperatures may be depressed, critical currents may be increased, by irradiation, but other behaviours may be encountered. In compounds, the sublattice in which defects are created is of significant importance. 24 refs.

International Nuclear Information System (INIS)

This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.

Energy Technology Data Exchange (ETDEWEB)

A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si{sup +} implant conditions have been considered. TEM analysis for the highest energy/dose shows that {l_brace}1 1 3{r_brace} defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, {l_brace}1 1 3{r_brace} defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. ...

UK PubMed Central (United Kingdom)

Generation of replicative defective viruses is frequently observed during viral infections. We now report that encapsidation and reverse transcription of spliced viral RNA is an additional mechanism...Full Text Available

International Nuclear Information System (INIS)

It is suggested that the large reduction of the superconducting transition temperature T sub(c) due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility chi, the elastic modulus C sub(s), the structural transformation temperature T sub(m) and the electrical resistivity rho) is also discussed from the same point of view. We expect the anomalous temperature dependence of chi C sub(s) and rho will be suppressed by defects. (auth.).

International Nuclear Information System (INIS)

This paper describes detection of electro-discharged machine (EDM) defects in magnetic steam generator (SG) tubes of Monju fast breeder reactor (FBR). The EDM defects are located under support plate (SP), on the outer tube surface and they are detected by a remote field eddy current probe. Using the experimental measurements and a multi frequency algorithm, the defect signal can be extracted from the SP signal. The parameters of the multi-frequency algorithm were calculated by comparing SP measurements with two-dimensional finite element simulations (FEM). (author)

DEFF Research Database (Denmark)

Udgivelsesdato: 2007-Feb

International Nuclear Information System (INIS)

There are very different views on the health hazards of DU munitions. Most of the concerns of veterans and their advisors focus on the radiological effects of DU and consequently these are the focus of this editorial. Effects on the kidney and environmental consequences are, however, considered in the second of the Royal Society reports and the main conclusions of both of the reports are outlined in the summary document published in this issue of the journal. The main radiological concerns focus on the irradiation of lung tissues from inhaled DU particles and irradiation resulting from the translocation of inhaled particles to the thoracic lymph nodes.The overwhelming scientific view, presented in the two Royal Society reports and in other independent reviews, is that the main risks of exposure to DU aerosols are an increase in lung cancer and (from chemical toxicity) damage to the kidney, although these are likely to be evident only following substantial intakes. The equivalent doses ...

British Library Electronic Table of Contents (United Kingdom)

Ventricular septal defect after acute myocardial infarction (AMI) is a complication associated with poor outcome in the absence of intervention. We report a case of successful TEE guided transcatheter closure of a post myocardial infarction (MI) ventricular septal defect (VSD) with an Amplatzer occluder in a 79 years old male with cardiogenic shock.

International Nuclear Information System (INIS)

Radionuclide (R) sorption from a solution (vapor) by freshly formed crystals with production of substitution solid solutions under different types of self-disordering is studied. Changes of self-defectiveness and macrodefectiveness with time and effect of radiation defects in the presence of P macroquantities are taken into account. An analysis for monodispersed sorbents is performed. It is shown that the achievement of equilibrium within a reasonable time in impurity-solid phase system depends on defectiveness which ensures a required level of the coefficient of impurity diffusion in sorbent crystals.

British Library Electronic Table of Contents (United Kingdom)

Surveillance of a population, such as a weapon stockpile, is needed to discover manufacturing defects as well as deterioration as the population ages. This article considers the risks of sampling rates for surveillance from three perspectives: detection probability of defects in a proportion of a population with pass/fail data, detection of a trend in a defective proportion of the population with pass/fail data, and detection of a trend with quantitative degradation measurements. Understanding of these risks will help the decision maker choose a sampling rate to protect against such problems of a specified size at a tolerable risk.

Energy Technology Data Exchange (ETDEWEB)

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

Energy Technology Data Exchange (ETDEWEB)

X-ray results on the lattice parameters, molar volume and thermal expansion coefficients of solid ortho-deuterium for the region from 2 K to the melting point are reported. It is found that the thermal expansion of ortho-deuterium crystals, similarly to parahydrogen is essentially anisotropic near the melting temperature. The vacancy density at the triple point is estimated. Some thermodynamic characteristics of ortho-deuterium are calculated and temperature dependences of heat capacity at constant volume, isothermal compressibility and Gruneisen constant are analyzed.

Energy Technology Data Exchange (ETDEWEB)

The adsorption equilibria of Kr, Xe and N{sub 2}, which are constituents of the off-gas from nuclear reprocessing processes, on representative adsorbents (Molecular Sieve 5A (MS5A) and activated charcoal) were studied. Adsorption experiments were conducted in the temperature range of 77 to 323 K using a packed bed column. The adsorption isotherms for the activated charcoal adsorbent were successfully correlated by the vacancy solution model. The adsorption isotherms for the MS5A adsorbent were properly correlated by the Langmuir model and the vacancy solution model. The adsorption experiments for the binary component systems (Kr-Xe, Kr-N{sub 2} systems) were also performed, and the results suggest that the coexistence of Xe greatly inhibits the adsorption of Kr. The coexistence of large amounts of N{sub 2} was also found to inhibit the adsorption of Kr. The experimental results for the adsorption equilibrium of binary component systems on the ...

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

DEFF Research Database (Denmark)

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas (2DEG) at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR ...

International Nuclear Information System (INIS)

We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. ...

Energy Technology Data Exchange (ETDEWEB)

A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an ...

Energy Technology Data Exchange (ETDEWEB)

Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of irradiated specimens were studied using transmission electron microscopy (TEM) and a nanoindentation technique, respectively. TEM ...

Energy Technology Data Exchange (ETDEWEB)

An investigation on the hydrogen generation by reacting ball-milled Mg-based materials in different alcoholic solutions (methanol, ethanol, 2-propanol) was performed. The MgH{sub 2} reactivity in methanol is very low (maximum conversion yield <10%) and no improvement is induced by the ball milling treatment. In contrast, the ball milling affects greatly the Mg reactivity in methanol. The Mg powder milled for 30min displays a maximum conversion yield of 47% compared to 3% for unmilled Mg powder. Its high reactivity is ascribed to the creation of numerous defects and fresh surfaces during the initial stage of the milling process, favoring the corrosion of Mg in methanol. In addition, the presence of water in the methanol solution inhibits drastically the alcoholysis reaction despite its low amount (0.3vol%). The higher hydrogen production is obtained with the composite Mg-10at% Ni milled for 30min leading to a conversion yield of 70% after ...

Energy Technology Data Exchange (ETDEWEB)

(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including ...

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...

British Library Electronic Table of Contents (United Kingdom)

The alloying effects on K to L shell vacancy transfer probabilities (?KL) in 3d transition metals have been carried out by X-ray fluorescence studies of various alloy compositions. K X-ray intensity ratios of Ti, Cr, Fe, Co, Ni, and Cu elements in the FexNi1?x, FexCr1?x, NixCr1?x, FexCryNi1?(x+y), TixNi1?x, TixCo1?x, and CoxCu1?x alloys have been measured following excitation by 22.69keV X-rays from a 10 mCi 109Cd radioactive point source and ?KL values for alloying elements have been determined from these ratios. The spectrum of characteristic K-X-ray photons from samples were detected with a high resolution Si(Li) detector coupled to a 4 K multichannel analyzer. The present investigation makes it possible to ...

International Nuclear Information System (INIS)

At the importance increase of UT (ultrasonic testing) with the application of rules on fitness-for-service for nuclear power plants, JAPEIC (Japan power engineering and inspection corporation) started education training for defect detection and sizing technique. Weld joints specimen with EDM (Electro-Discharged Machining) notches, fatigue cracks and intergranular stress corrosion cracks were tested and practiced repeatedly based on a modified ultrasonic method and the defect size measuring accuracy of the trainees was surely improved. Results of the blind test confirmed effectiveness of education training. (T. Tanaka)

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Energy Technology Data Exchange (ETDEWEB)

The CeO{sub 2}-ZrO{sub 2}-Bi{sub 2}O{sub 3} samples with different bismuth content were prepared in this study. By the doping of Bi{sub 2}O{sub 3} into the lattice, TPR profiles of the CeO{sub 2}-ZrO{sub 2} shifted to lower temperatures and oxygen storage capacity increased remarkably. It is concluded that the reason for such a behavior is probably due to both the formation of oxygen vacancies which enhance the oxygen mobility and the simultaneous reduction of Ce{sup 4+} and Bi{sup 3+} in the mixed oxides. (authors)

Energy Technology Data Exchange (ETDEWEB)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

Medline Plus

... stenosis. It looks from the transesophageal and the 3-D echo that most of the problem is really ... posterior leaflet, which you can see on the 3-D echo image is a major source. The anterior ...

CERN Document Server

This mechanical version was soon after changed into a hydraulic jack one (the reason being a number of serious constructional defects).

Energy Technology Data Exchange (ETDEWEB)

The influence of common welding defects such as internal under-cut, incomplete penetration of the root bead, internal concavity and hollow bead have been evaluated in a sour environment. Tests were performed on samples cut from actual pipeline welds. The individual defects were subjected to slow strain rate testing. The samples were then examined by metallography, scanning electron microscopy, and hardness testing. It was established that a threshold stress intensity exists for sulphide stress cracking. The test results were compared to those obtained from samples of the weld and pipe which did not contain any defects. This comparison indicated that the metallurgical variations associated with the presence of a weld are the main factor for sulphide stress cracking rather than any specific defects or geometry. 5 tabs., 9 figs.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

The location of defective LMFBR fuel pins by the determination of gas tag isotopic ratios is discussed. The application of this method to the FFTF Reactor briefly described.

UK PubMed Central (United Kingdom)

Glycine is a major inhibitory neurotransmitter in the spinal cord and brainstem. Recently, in vivo analysis of glycinergic synaptic transmission has been pursued in zebrafish using...Full Text Available

Science.gov (United States)

... company. To automate this initial cutup requires a computer vision system that can locate and identify surface defects ... ...

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

Energy Technology Data Exchange (ETDEWEB)

Fuel cell vehicles have been identified as the personal transportation technology of the future because of their high efficiency and very low emissions. To achieve the goal of road-ready fuel cell vehicles, great strides must be made in the development of fuel cells, hydrogen production and hydrogen storage technologies, that includes metal-H interaction studies and safety considerations. The interaction between two-hydrogen atoms and a {gamma}-Fe structure containing a vacancy has been studied using a cluster model and a theoretical method. For the study of the sequential absorption, the hydrogen atoms were positioned in their energy minima configurations, near the vacancy. The interactions mainly involve Fe 4s-H 1s atomic orbitals. The contribution of Fe 4p and Fe 3d orbitals is much less important. The Fe-Fe bond is weakened as new Fe-H-H and H-H pairs were formed. The effect of H atoms is limited to its first Fe neighbors. The Fe-Fe bond ...

KoreaScience (Korea)

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KoreaScience (Korea)

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KoreaScience (Korea)

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UK PubMed Central (United Kingdom)

Vibrio cholerae 638 (El Tor, Ogawa), a new CTXΦ-negative hemagglutinin/protease-defective strain that is a cholera vaccine candidate, was examined for safety and immunogenicity...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are ...

International Nuclear Information System (INIS)

Results on defect structure study and degree of molybdenum radiation hardening irradiated by fission neutrons and medium energy alpha-particles are presented. It is shown that molybdenum irradiation by alpha-particles and neutrons leads to different degree of material hardening for the same damage level. It is established that molybdenum radiation hardening is mainly defined by radiation defect clusters visible in electron microscope whose coefficient of rigidity depends on their size. 5 refs.; 6 figs.; 2 tabs. (author).

UK PubMed Central (United Kingdom)

Temperature-sensitive mutants defective in 60S ribosomal subunit protein L16 of Saccharomyces cerevisiae were isolated through hydroxylamine mutagenesis of the RPL16B gene and plasmid shuffling. Two...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Minimally invasive thermotherapies for focal tissue destruction on the basis of laser-, microwave-, focused ultrasound-, or cryogeninduced changes of tissue temperature represent an alternative to surgical tissue ablation, particularly in the treatment of tumors. The thermotherapy modalities listed necessitate indirect guidance and monitoring, since they often do not lend themselves to immediate visual control. In the brain, in head and neck tumors, in the liver, and in the prostate, MRI reliably and accurately delineates both the positions of interstitial thermotherapy applicators and - in contrast-enhanced, T1-weighted images - the perfusion defects in tissue necrosis induced by thermotherapy. The transfer of results of in-vitro and in-vivo model studies to assess interstitial temperature and lesion development during thermotherapy to the actual treatment of patients, however, is still in an initial phase. Further development of both rapid ...

Energy Technology Data Exchange (ETDEWEB)

There are currently no accepted industry standards for the tensile strain limits of girth welds. This paper investigated the behavior of girth welds with buried defects subjected to high longitudinal strains caused by soil movement. A strain design methodology based on a crack driving method was used to examine the factors influencing stain limits along with a constraint-sensitive fracture mechanics approach. No strength undermatching was used in the welds, and the defect location had no influence on crack driving force. The weld joint was assumed to have uniform tensile properties. A 3D finite element (FE) model was used to simulate pipe behavior. Symmetric boundary conditions were imposed on the symmetry planes, and uniform remote axial displacement was applied as the primary loading. Automated data processing routines were developed to extract and analyze the data. The crack driving force was computed directly from a crack tip deformation ...

International Nuclear Information System (INIS)

In the present paper we estimate the effect of sodium in the in-service inspection of non-magnetic steam generators tubes using eddy current technique and eddy current probes based on a differential double bobbin coil configuration. Experimental measurements of defects signals in steam generator tubes of fast breeder reactor are compared with simulations results of a two-dimensional axisymmetric finite element code to validate a reliable electromagnetic model of the system (eddy current coils, steam generator tube, defect) when there is no sodium on the outer steam generator tube surface. The electromagnetic code is used to evaluate the sodium band and sodium layer signals when a defect is located under steam generator support plate. Using a multi-frequency algorithm, its parameters are determined in the 'no sodium condition' (there is no sodium on the outer steam generator tube surface), defects signal ...

British Library Electronic Table of Contents (United Kingdom)

Ventricular septal defects can occur as part of other congenital cardiac malformations or as an isolated finding. Aneurysms of the sinus of Valsalva are rare, most commonly involving the right or noncoronary sinuses. They can be congenital or acquired through infection, trauma, or degenerative diseases. They frequently co-exist with ventricular septal defects, aortic valve dysfunction, or other cardiac abnormalities. More commonly, sinus of Valsalva aneurysms are diagnosed after the clinical sequelae of rupture. Several etiologic factors may lead to the development of pathologic pericardial effusion and the detection of pericardial effusion was one of the first applications of echocardiography to gain widespread acceptance. We present a case of a chance finding of an aneurysm of the right ...

Energy Technology Data Exchange (ETDEWEB)

With steam generator check testing, the numerous types of defect not only have to be detected reliably but also to be identified correctly and classified according to depth. A priori, no signals are provided by the physical eddy-current mechanism, i.e. the disturbance of an excited eddy-current field by a defect, which will allow unambiguous identification and classification of the defects. The task, therefore, consists in designing the eddy-current method in terms of measurement technology in such a way as to obtain useful detection, identification and classification by a translation of the signals as simple and as save as possible. Internal through-flow wils and internal rotating probes were examined for their suitability to fulfill this three-pronged task with steam generator inspection.

British Library Electronic Table of Contents (United Kingdom)

The treatment of acetabular bone defects presents a great challenge in revision total hip arthroplasty (THA). The purpose of this study was to evaluate the clinical and radiological outcome of revision THA using jumbo cups for acetabular reconstruction after applying the bone-grafting technique. We studied 17?patients with acetabular defects ranging from Type 2A to Type 3A according to Paprosky`s classification. According to the AAOS-score twelve patients were classified as Type II and five patients as Type III. Uncemented press-fit cups with an outer diameter larger than 64?mm were used in all cases. Fifteen patients received morselized bone allografts. In eight patients an additional screw fixation was necessary. The mean follow-up period was 82?months (range 33?149). The mean Harris Hip...

Energy Technology Data Exchange (ETDEWEB)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the polymorphs'' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes worm holes'' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100[degrees]C lock in the mechanical twins.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

International Nuclear Information System (INIS)

Computer experiments imitating specimen strain on tension with constant deformation rate have been carried out. A formation possibility of atmosphere from defects around gliding dislocations (I) and a work of Frank-Read sources (II) have been accounted for. In result deformation curves until stresses do not exceed a critical shear stress were calculated. Influence of effects (I) and (II) was analyzed. It is determined that both by pass of dislocations over defect ''atmospheres'' and dislocation multiplication can cause a peak in flow stress occurrence on the deformation curves. Reasons and conditions of such peak occurrence have been studied. 12 refs.; 9 figs. (author).

CERN Document Server

Two-dimensional simulations of the coarsening process of the isotropic/smectic-A phase transition are presented using a high-order Landau-de Gennes type free energy model. Defect annihilation laws for smectic disclinations, elementary dislocations, and total dislocation content are determined. The computed evolution of the orientational correlation length and disclination density is found to be in agreement with previous experimental observations showing that disclination interactions dominate the coarsening process. The mechanism of smectic disclination movement, limited by the absorption and emission of elementary dislocations, is found to be facilitated by curvature walls connecting interacting disclinations. At intermediate times in the coarsening process, split-core dislocation formation and interactions displaying an effective disclination quadrupole configuration are observed. This work provides the framework for further understanding of the formation and ...

International Nuclear Information System (INIS)

The magnetic hyperfine constants of the V sub(K) center in CaF_2, SrF_2 and BaF_2 have been calculated, assuming a phenomenological model, based on the F"-_2 'central molecule', to describe the wave function of the defect. The introduction of covalence with the ions neighboring the 'central molecule', has shown that this is a better description for the defect than a simple 'central molecule' model. It was also shown that the results for the hyperfine constants are strongly dependent on the relaxations of these neighboring ions, which have been determined by fitting the experimental data. The present results are compared with other previous calculations where similar and different methods have been used. A better description for the wave function of the defect is suggested. (author).

International Nuclear Information System (INIS)

We have studied L x-rays from 64 MeV iodine projectile in collision with various gas targets, Z_2 #18, do not arise from selective M subshell vacancy population, has been conclusively established by the observations by Datz et al (1971) and by Saha et al (1996) that the measured intensity ratio of the Ll and L#alpha# lines, which arise because of transitions from different M subshells into the same L, subshell, does not show any periodic behaviour with Z, but stays rather constant. Differences in the measured L#beta#_1/L#alpha# intensity ratio of iodine with 7"+ and 24"+ charge states impinging on Kr target established the minor role of the electrons in the N shell of the projectile in the x-ray production mechanism. (author)

Wastenet

...The RSPB: Great crested grebe A delightfully elegant waterbird with ornate head plumes which led to its being hunted for its feathers, almost leading to its extermination from the UK. E-mail to a friendE-newsletterContact us Home England Northern Ireland Scotland Wales About Overview Awards & recognition Contact us Facts and figures History How we are run Inspiring work Job vacancies Looking to the future Media centre Offices The RSPB view ...status: Green Listen Get Flash player Play sound 1 videoLatin name Podiceps cristatusFamily Grebes (Podicipedidae)Overview A delightfully elegant waterbird with ornate head plumes which led to its being hunted for its feathers, almost leading to its extermination from the UK. They dive to feed and also to escape, preferring this to flying. On land they are clumsy because their feet are placed so far back on their bodies. ...

Energy Technology Data Exchange (ETDEWEB)

In the present study, element interdiffusions at the cofired interface of 9/1 Ag/Pd electrode and lead magnesium niobate (PMN)-based ferroelectrics were investigated using Auger Electron Spectroscopy (AES). Intense interdiffusions at the interface were observed while Ag and Pd could penetrate into the ceramics for about 1 {mu}m. Ag-doping experiments were carried out to further study the effects of Ag diffusion on electrical properties of the ceramics. The results showed that Ag could be incorporated into solid solution of the ceramics as Ag{sup +}. As a whole, the Curie temperature (Tc) and dielectric constant of the ceramics decreased with Ag addition. However, Ag addition had no obvious effect on the insulation resistivity. The results inferred that Ag{sup +} could substitute for Pb{sup 2+} at A site of ABO{sub 3} lattice, thereby oxygen vacancies were generated.

International Nuclear Information System (INIS)

From self-consistent band structure calculations using the 'augmented plane wave'(APW) method, the density of states can be decomposed into local partial (according to azimuthal quantum number l) components, the l-character densities. Within the APW formalism the intensity of X-ray emission spectra is determined by radial transition probabilities and l-character densities of such valence states, which reside inside the same atomic sphere as the core vacancy and whose quantum number l differs by +-1 from the one corresponding to the core state. By taking into account lifetime broadening of the core and valence states and also the instrumental broadening the computed spectra (non-metal K-, vanadium K- and Lsub(III)-spectra) agree well with experiment. (orig.).

UK PubMed Central (United Kingdom)

Studies fail to find uniform effects of age-related or induced hypogonadism on human sexual function. We examined the effects of induced hypogonadism on sexual function in healthy men and women...Full Text Available

UK PubMed Central (United Kingdom)

Many patients are currently suffering from nickel (Ni)-induced allergic contact dermatitis (ACD). There have been few Korean studies dealing with the threshold of Ni-induced ACD and quantifying the...Full Text Available

UK PubMed Central (United Kingdom)

The issue of beam-induced damage on diffractive hard X-ray optics is addressed. For this purpose a systematic study on the radiation damage induced by a high-power X-ray beam is carried out in both...Full Text Available

UK PubMed Central (United Kingdom)

Although recent data established that a specific very-long-chain fatty acyl-CoA synthetase is defective in X-linked adrenoleukodystrophy (ALD), the ALD gene is still unidentified. The ALD locus has...Full Text Available

UK PubMed Central (United Kingdom)

Monogenic autoinflammatory diseases encompass a distinct and growing clinical entity of multisystem inflammatory diseases with known genetic defects in the innate immune system. The diseases...Full Text Available

UK PubMed Central (United Kingdom)

The Arabidopsis ref2 mutant was identified in a screen for plants having altered fluorescence under UV light. Characterization of the ref2 mutants showed that they...Full Text Available

UK PubMed Central (United Kingdom)

Patients with Alport syndrome progressively lose renal function as a result of defective type IV collagen in their glomerular basement membrane. In mice lacking the α3 chain of type IV collagen...Full Text Available

UK PubMed Central (United Kingdom)

We have recently reported that progeroid Zmpste24^−/− mice, which exhibit multiple defects that phenocopy Hutchinson-Gilford progeria syndrome, show a profound dysregulation...Full Text Available

UK PubMed Central (United Kingdom)

Prenatal cocaine exposure produces sustained neurobehavioral and brain synaptic changes closely resembling those of animals with defective alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic...Full Text Available

UK PubMed Central (United Kingdom)

Muscular dystrophies (MDs) comprise a group of degenerative muscle disorders characterized by progressive muscle wasting and often premature death. The primary defect common to most MDs involves disruption...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundA strong association between stress resistance and longevity in multicellular organisms has been established as many mutations that extend lifespan also show increased...Full Text Available

Science.gov (United States)

The goal of this study was to evaluate topics used to troubleshoot circuit boards with known or suspected thermally intermittent components. Failure modes for thermally intermittent components are typically mechanical defects, such as cracks in solder paths or joints, or broken b...

UK PubMed Central (United Kingdom)

Carney-Stratakis syndrome, an inherited condition predisposing affected individuals to gastrointestinal stromal tumor (GIST) and paraganglioma, is caused by germline mutations in succinate dehydrogenase...Full Text Available

UK PubMed Central (United Kingdom)

Epidemiological data indicate that children conceived in vitro have a greater relative risk of low birth-weight, major and minor birth defects, and rare disorders involving imprinted...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Cracking resistance and metal damage are considered in relation to structural state for steam-pipe fittings during use. An approximate scheme is given for estimating the maximum permissible operating time in the plastic state in relation to the depth of an observed crack-type defect.

UK PubMed Central (United Kingdom)

In a previous study we found that nanofibrous poly(l-lactic acid) (PLLA) scaffolds mimicking collagen fibers in size were superior to solid-walled scaffolds in promoting osteoblast differentiation...Full Text Available

UK PubMed Central (United Kingdom)

Molecular chaperones protect cells from the deleterious effects of protein misfolding and aggregation. Neurotoxicity of amyloid-beta (Aβ) aggregates and their deposition in senile plaques are...Full Text Available

UK PubMed Central (United Kingdom)

SUMMARYAmeloblastin (AMBN) is the second most abundant extracellular matrix protein produced by the epithelial cells called ameloblasts and is found mainly in forming dental enamel....Full Text Available

CERN Document Server

We point out that the moduli sector of the $(2,2)$ string compactification with its nonperturbatively preserved non-compact symmetries is a fertile framework to study global topological defects, thus providing a natural source for the large scale structure formation. Based on the target space modular invariance of the nonperturbative superpotential of the four-dimensional N=1 supersymmetric string vacua, topologically stable stringy domain walls are found. They are supersymmetric solutions, thus saturating the Bogomolnyi bound. It is also shown that there are moduli sectors that allow for the global monopole-type and texture-type configurations whose radial stability is ensured by higher derivative terms.

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The defects localization in power cables follows several steps: identification, pre-localization and precise localization. Pre-localization methods, other than echo-metry, are presented first: bridge methods, particular case of low voltage networks, future perspectives. Then, the precise localization methods are described: magneto-acoustic method, audible frequencies method. The particular case of underwater and high-voltage cables is considered too (oil and gas leaks detection). (J.S.)

Energy Technology Data Exchange (ETDEWEB)

Magnetic behavior in three compounds RTa{sub 3}O{sub 9} (R = Nd, Eu and Ho) with defect-perovskite structures has been investigated by DC magnetic susceptibility. The susceptibility of NdTa{sub 3}O{sub 9} shows strong influence of crystal field. For EuTa{sub 3}O{sub 9} a typical Van Vleck paramagnetism has been observed. HoTa{sub 3}O{sub 9} obeys a Curie-Weiss law above 20 K. (orig.) 8 refs.

CERN Document Server

Thermal and Electromigration-Induced Strains in Polycrystalline Films and Conductor Lines

Energy Technology Data Exchange (ETDEWEB)

Neutron-induced soft error rates (SER`s) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SE`s). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, the SER data corresponds to those induced by cosmic ray neutrons. The {alpha}-particle induced SER`s were also measured for comparison with the neutron-induced SER`s. Neutron-induced SE`s occurred in both circuits. On the other hand, {alpha}-induced SE`s occurred in SRAM, but not in the Latch circuit. The measured SER`s agreed with simulated results. The authors discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level.

UK PubMed Central (United Kingdom)

In rats, drug-induced depression of the central nervous system has been shown generally to be associated with an elevation in level of total acetylcholine in the brain. This generalization held true...Full Text Available

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the ...

Energy Technology Data Exchange (ETDEWEB)

In steel production lines such as pickling lines, cold rolling mills and coil processing lines, the needs for on-line continuous measurement of surface quality and property of products and on-line inspection of surface defects have become strong. This is because user requirements for the surface quality of various products have become severer than before and besides, expectations are running high on the side of manufacturers for higher speeds of production lines and higher quality by the adoption of automatic inspection. As for the measurement of surface quality, continuous measurements along the full length of a steel strip are required in order to overcome problems derived from off-line, batch measurements that cannot satisfy user's demands for quality assurance. As for surface defects detection, various kinds of methods have been practically applied to production lines. However, it is the matter of fact that performances of these ...

Science.gov (United States)

Pentaerythritol tetranitrate (PETN) is a relatively sensitive explosive used in many electroexplosive devices as well as in medicine. Of primary interest to LLNL is its use in items such as exploding bridgewire (EBW) detonators and exploding bridge foil initiators (EFI). In these devices the crystalline powder is pressed into a granular, low-density compact that can be initiated by an exploding wire or foil. The long-term stability of this pressed compact is of interest to weapon stockpile lifetime prediction studies. Key points about potential aging mechanisms can be summarized as follows: (1) There are a number of factors that can contribute to PETN instability. These include particle size, polymorphic phase transitions, crystal structure, impurities, moisture, occlusions, chemical incompatibility and biological (microorganism) action. of these factors the most important for long-term aging of high surface area powders used in detonators appears to be that of particle size growth. ...

KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

Short communication. 5 refs., 2 figs.

KoreaScience (Korea)

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