Science.gov (United States)

(Watkins and. Corbett,. 1964) which is a phosphorous-vacancy complex, i.e., ...... Grover. 1965. Semiconductor. Surfaces. ...

International Nuclear Information System (INIS)

Results of an augmented-plane-wave calculation of the positron lifetime and the angular-correlation curves for aluminum, both in the vacancy-free crystal and in the crystal with a vacancy, are presented. The environment of the vacancy was simulated by a face-centered-cubic supercell with a volume 27 times that of the standard primitive unit cell of the Al lattice. The calculated positron-vacancy binding energy is 3.36 eV at room temperature. The temperature dependences of the trapping potential, the positron-vacancy binding energy, and the positron lifetime both in the Bloch state and in the vacancy-trapped state, associated only with the static thermal expansion of the lattice, have been calculated. It is found that the fractional increase in positron lifetime in the Bloch state is only approx.80% of the fractional increase in the volume of the lattice. The ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

Angular dependence from L_3-subshell to M-shell vacancy transfer probabilities for selected heavy elements from Au to U have been measured by using a Si(Li) detector coupled to a model 1024 computerized multi-channel analyzer. Because the angular dependence from L_3-subshell to M-shell vacancy transfer probabilities is not found in the literature, to the best of our knowledge there are no experimental values for worked elements. Therefore, the results for the elements obtained in the present study constitute the first experimental measurements; the comparison has been not made with other experimental and theoretical results. It has been observed that angular dependence from L_3-subshell to M-shell vacancy transfer probabilities increase with increasing cos #theta#.

International Nuclear Information System (INIS)

Data on the recovery of Tsub(c) for several neutron irradiated A-15 compounds are presented. A model for the mechanism of recovery is suggested and has been applied to isothermal annealing data at 550"0C on a sample of Nb_3Ge and to isochronal annealing (200"0C-900"0C) data on V_3Si, Nb_3Ge and Nb_3Sn subjected to varying doses of fast neutrons and on Nb_3Al of various compositions subjected to the same dose. The recovery is assumed to take place by vacancy assisted reordering and occurs in several stages. The major low temperature stage is attributed to irradiation induced vacancies, while at high temperatures there are depleted and recovery is ascribed to the motion of thermal equilibrium vacancies. Activation energies deduced for these processes, approximately 1 eV for vacancy motion and approximately 1-2 eV for vacancy formation, are consistent with what is known about diffusion ...

Energy Technology Data Exchange (ETDEWEB)

Enhanced superlattice disordering in nonstoichiometric AlAs/GaAs quantum wells exhibits weak temperature dependence because of the decay of the supersaturated concentration of group-III vacancies. We present a formalism for transient enhanced diffusion in nonstoichiometric materials with which we can extract migration enthalpies {ital H}{sub {ital m}} by assuming that the vacancy decay is thermally activated with an enthalpy {ital H}{sub {ital a}}. By analyzing the electroabsorption from the quantum-confined Stark effect for a set of isochronal and isothermal anneals, we extract a migration enthalpy {ital H}{sub {ital m}}=(1.8{plus_minus}0.2) eV for group-III vacancies, as well as an activation enthalpy {ital H}{sub {ital a}}=(0.7{plus_minus}0.2) eV for vacancy annihilation. {copyright} {ital 1996 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports that the point defect model for steady-state passive films formed anodically on metal s in aqueous environments has been extended to include irreversible dissolution of the film and the irreversible generation and annihilation of cation and oxygen vacancies at the metal/film and film/solution interfaces. THe model yields a number of diagnostic criteria that can be used to identify the majority (vacancy) charge carrier and to characterize the kinetic nature of the interfacial vacancy generation and annihilation processes. We use these criteria to show that the steady-state passive film that forms on nickel in acidic phosphate buffer solutions is a cation conductor and that cation transport from the metal to the solution involves irreversible ejection of cations from the film. On the other hand, the passive film that forms on tungsten in the same environment under steady-state conditions is found to be an ...

Energy Technology Data Exchange (ETDEWEB)

The {delta} {yields} {alpha}{prime} martensitic transformation in Pu-1.9 at.% Ga occurs when the alloy is cooled below about -100 C. This transformation exhibits anomalous behavior, where the isothermal transformation proceeds atypically with double-C kinetics. Recent work has revealed that an ambient temperature isothermal hold (referred to as conditioning) prior to the transformation has different effects depending on whether transformation proceeds in the upper- or lower-C of the double-C: the amount of transformation is increased with conditioning in the upper-C, while the transformation in the lower-C seems to be engendered by conditioning. The mechanism by which conditioning affects the low-temperature {delta} {yields} {alpha}{prime} transformation is thus of great importance to understanding the transformation itself as well as the general circumstances that can affect a martensitic phase transformation. Using differential scanning calorimetry measurements, ...

International Nuclear Information System (INIS)

The effect of the #+-# 0.75 T external magnetic field on the K_#alpha#_1, K_#alpha#_2, K_#beta#_'_1 and K_#beta#_'_2 x-ray production cross sections and radiative vacancy transfer probabilities from K-shell to L2 and L3 subshells and M-shell for ferromagnetic Nd, Gd and Dy and paramagnetic Eu and Ho have been investigated, using the 59.5 keV incident photons. K-shell fluorescence yields and K x-ray intensity ratios for these elements have been determined in the external magnetic field also. The K x-rays from different targets were detected using a high-resolution Si(Li) semiconductor detector. For B = 0, the present experimental results were compared with the experimental and theoretical data in the literature. The results show that K-shell fluorescence parameters such as photoionization cross section, fluorescence yield, radiation rates, vacancy transfer probabilities and spectral linewidth can change owing to the applied magnetic field. ...

International Nuclear Information System (INIS)

Structural variations in 39-MeV alpha-particle irradiated (Tsub(irr) = 60 deg C) polycrystalline molybdenum during post-irradiation annealing were studied by X-ray and TEM methods. Despite the high density of irradiation induced defects in the structure of the specimen X-ray measurements showed zero relative lattice parameter change after an irradiation dose of 1.1 x 10"-_2 dpa. However, during the annealing #delta#a/a was changed in the positive range, exhibiting two peaks - at 100 and 300 deg C - whereas the damage structure detected by TEM indicated no changes. Analysis of the results leads to the conclusion that in the range 100 to 250 deg C migration of isolated vacancies and their annihilation at interstitial clusters as well as possible formation of new vacancy clusters occur. The second peak on the #delta#a/a temperature dependence curve is related to the transformation (probably, thermal disintegration) of vacancy ...

International Nuclear Information System (INIS)

The evolution of metallic substance atomic structure is studied on temperature variation including crystal heating up to melting points, a crystal- liquid phase transition and initiation of a high-density liquid specific structure. It is marked that heat induced changes of simple metal structure can be described as changes around a natural elementary cell which is common for both a crystal and a liquid and consists of a central atom and Z_1 atoms of the first coordination sphere. On this basis the vacancy model of melting is verified. Concentrations of melting vacancies are determined by coordination numbers in the form of Z_1/(1+Z_1)"2 which are the same for both a crystal and a natural elementary cell. The size of natural elementary cells is in an agreement with that of the coordination sphere featured in the liquid and phase transition statistical theory. Calculated data are given for a number of metals, Cs, Eu, Ni, V included

Energy Technology Data Exchange (ETDEWEB)

The measurements of the K X-ray intensity ratio I(K{sub {beta}})/I(K{sub {alpha}}) for the 17 elements Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Rb, Sr, Y, Zr, Nb and Mo have been done following ionization by 59.5keV {gamma}-rays from a {sup 241}Am point source. Ratios of emission probabilities of Auger electrons and the vacancy transfer coefficients have been extracted in terms of the intensity ratios. It is found that the present results agree well with earlier fitted values and the semi-empirical values.

International Nuclear Information System (INIS)

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the studied doping range. The thermally activated oxygen motion starts to develop above ...

Energy Technology Data Exchange (ETDEWEB)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an ...

International Nuclear Information System (INIS)

M shell x-ray production cross sections in thick targets of Pb, Th and U by K x-rays of Rb, Nb and Mo respectively have been measured. As the incident K x-ray energies are above the L_3 edge but below L_2 edge energies of the respective target elements under reference, the M x-rays are produced not only due to direct interaction of incident photons with M shell electrons but also due to the shift of the L_3 subshell vacancies to the M shell. The experiment has been performed using a double reflection geometrical setup with a 1 Curie"2"4"1Am gamma ray source and a Si (Li) x-ray spectrometer. The measured values have been compared with those calculated using known values of M and L_3 subshell photoionisation cross sections and fluorescence yields etc., wherever possible. The component of the percentage contribution due to shift of L_3 subshell vacancies to M shell to the total M shell x-ray emission were evaluated and it is seen that the shift of ...

International Nuclear Information System (INIS)

Within the tight binding framework, a study is made of how the disorder affects the electronic properties of A-15 compounds. In particular it is shown that for compounds of two transition metals in the A-15 structure, the vacancy formation affects the density of states only in the low energy region or in the high energy region, in opposition with the isolated chain model of Labbe and Friedel. It is concluded that interchain interactions are important. (U.K.).

International Nuclear Information System (INIS)

A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B C1.1 base metal irradiated to a dose of 4.84x10"1"8 n/cm"2 at about 380 deg C. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature of 280-305 deg C. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy aggromeration and the annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in the range of 305-405 ...

International Nuclear Information System (INIS)

We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen sensing was found to be filling of the oxygen vacancies in the ...

International Nuclear Information System (INIS)

The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f_A. Accurate knowledge of f_A is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f_A is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f_A without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f_S_b#<=#0.012 and f_B#>=#0.98 at temperatures of #approx#800 degree C, which are the strictest bounds reported to date. Our results are in agreement with a theoretical expectation that a substitutional dopant in Si ...

Energy Technology Data Exchange (ETDEWEB)

The structure of Bi/sub 1.8/Ce/sub 0.2/(MoO/sub 4/)/sub 3/ has been refined with powder neutron diffraction data by the Rietveld method. The structure can be derived by severely distorting the scheelite structure (AMO/sub 4/) and is perhaps better written A/sub (2/3)/phi/sub (1/3)/MO/sub 4/, where phi = cation vacancy. Of the two bismuth atom sites, cerium preferentially occupies the more symmetric of the two (Bi(2) in the structure) with some cerium found in the scheelite subcell vacancies also. This site preference is understood by examining the symmetries of the two Bi sites. Crystal data: monoclinic, space group P2/sub 1//c, Z = 4, a = 7.697(2), b = 11.535(3), c = 11.944(3), ..beta.. = 115.19.

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.

International Nuclear Information System (INIS)

We have performed molecular dynamics simulations of radiation damage in fused silica. In this study, we discuss the role of successive cascade overlap on the saturation and self-healing of oxygen vacancy defects in the amorphous fused silica network. Furthermore, we present findings on the topological changes in fused silica due to repeated energetic recoil atoms. These topological network modifications consistent with experimental Raman spectroscopic observation on neutron and ion irradiated fused silica are indicators of permanent densification that has also been observed experimentally.

Energy Technology Data Exchange (ETDEWEB)

The CeO{sub 2}-ZrO{sub 2}-Bi{sub 2}O{sub 3} samples with different bismuth content were prepared in this study. By the doping of Bi{sub 2}O{sub 3} into the lattice, TPR profiles of the CeO{sub 2}-ZrO{sub 2} shifted to lower temperatures and oxygen storage capacity increased remarkably. It is concluded that the reason for such a behavior is probably due to both the formation of oxygen vacancies which enhance the oxygen mobility and the simultaneous reduction of Ce{sup 4+} and Bi{sup 3+} in the mixed oxides. (authors)

Energy Technology Data Exchange (ETDEWEB)

Self-consistent electronic structure calculations have been performed on two compositions of scandium sulfide ScS and Sc/sub 3/S/sub 4/. The results of the calculation of ScS are similar to those obtained for other transition metal chalcogenides and are in excellent agreement with heat capacity and reflectance measurements as well as UPS experiments. The calculation of the defect structure indicates the creation of sulfur p nonbonding states in metal-deficient ScS. The valency of the metal ions remains unchanged upon the creation of vacancies.

International Nuclear Information System (INIS)

The electronic structure of the clusters [V_3Si_4]"1"2"-, [Nb_3Sn_4]"1"2"-[Mo_3Ge_4]"1"5"- in crystalline V_3Si, Nb_3Sn, Mo_3Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered. (author).

International Nuclear Information System (INIS)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

Energy Technology Data Exchange (ETDEWEB)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

Energy Technology Data Exchange (ETDEWEB)

The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four.

International Nuclear Information System (INIS)

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

International Nuclear Information System (INIS)

November was a quiet month in Washington. Although Congress has recessed until 1991, the Senate filled vacancies in party leadership positions created by November's elections. The House is expected to proceed with its changes in early December. The Nuclear Energy Forum was held in Washington, DC on November 11-14 to discuss the status of the nuclear industry in the USA. The Forum, held in conjunction with the American Nuclear Society's annual meeting, assembled a large number of CEO's from US, European, and Far Eastern utilities and vendors. The meeting concluded with an announcement by Philip Bayne, President of NYPA and chairman of the Nuclear Power Oversight Committee (NPOC), of the results of a year-long NPOC study entitled a open-quotes Strategic Plan for Building New Nuclear Power Plants.close quotes.

International Nuclear Information System (INIS)

Up to now, P diffusion in Ge is modeled with an effective diffusivity involving at most a quadratic dependence with the free electron concentration (n). However, recent theoretical studies suggest the existence of a triply negatively charged state for the free vacancy in germanium and experimental data indicate that the E center (PV pair) in Ge has a double acceptor state. These two facts would be consistent with a diffusivity model involving a cubic dependence with n. In this paper the validity of this approach is checked for both pure thermal diffusion (intrinsic and extrinsic) and implanted phosphorus, using either our own experiments or other data available from the literature. Although some discrepancies still exist in some cases for the redistribution of implanted P, it is shown that the introduction of this cubic dependence significantly improves the overall agreement as compared with the usual model.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

Energy Technology Data Exchange (ETDEWEB)

In the present study, element interdiffusions at the cofired interface of 9/1 Ag/Pd electrode and lead magnesium niobate (PMN)-based ferroelectrics were investigated using Auger Electron Spectroscopy (AES). Intense interdiffusions at the interface were observed while Ag and Pd could penetrate into the ceramics for about 1 {mu}m. Ag-doping experiments were carried out to further study the effects of Ag diffusion on electrical properties of the ceramics. The results showed that Ag could be incorporated into solid solution of the ceramics as Ag{sup +}. As a whole, the Curie temperature (Tc) and dielectric constant of the ceramics decreased with Ag addition. However, Ag addition had no obvious effect on the insulation resistivity. The results inferred that Ag{sup +} could substitute for Pb{sup 2+} at A site of ABO{sub 3} lattice, thereby oxygen vacancies were generated.

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

Energy Technology Data Exchange (ETDEWEB)

To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

Science.gov (United States)

Herpes simplex virus type-1 (HSV-1) entry into target cell is initiated by the ionic interactions between positively charged viral envelop glycoproteins and a negatively charged cell surface heparan sulfate (HS). This first step involves the induction of HS-rich filopodia-like structures on the cell surface that facilitate viral transport during cell entry. Targeting this initial first step in HSV-1 pathogenesis, we generated different zinc oxide (ZnO) micro-nano structures (MNSs) that were capped with multiple nanoscopic spikes mimicking cell induced filopodia. These MNSs were predicted to target the virus to compete for its binding to cellular HS through their partially negatively charged oxygen vacancies on their nanoscopic spikes, to affect viral entry and subsequent spread. Our results demonstrate that the partially negatively charged ZnO-MNSs efficiently trap the virions via a novel virostatic mechanism rendering them unable to enter into human corneal ...

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

International Nuclear Information System (INIS)

Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 by the irradiation. From these results we can find that irradiation with the X-ray and the UV-light ...

Energy Technology Data Exchange (ETDEWEB)

The influence of surface oxides of variable composition and nonstoichiometry formed at high temperatures in air on the general corrosion resistance of ferritic chromium steel type 08H17T (Fe-17Cr-1Ti) in weak sulfuric acid has been studied. Anodic passive films formed on steel with different pretreatments have also been examined. The surface oxide of nearly stoichiometric composition formed at 300 C provides for the passive state of steel in sulfuric acid despite its depletion by chromium when compared with that for nonstoichiometric Cr-enriched oxide formed at 600 C. The dissolution and transformation of nonstoichiometric thermal surface oxide in sulfuric acid appear to take place through defect sites, {minus}Fe{sup 2+} ions, and oxygen vacancies of the n-type conductor. The passive film formed on the nonstoichiometric oxide film, which had been produced at 600 C, was found to be more susceptible to open-circuit breakdown compared to the native oxide and to the ...

International Nuclear Information System (INIS)

Radio frequency (RF) plasma nitriding using different input plasma processing powers (250-600 W) improves the surface of titanium by forming hard phases of TiN, Ti_2N, and Ti (N) into the surface. The characteristics of the compound layer have been investigated by optical microscopy, microhardness measurements, and X-ray diffraction. The effect of plasma power on the sample temperature, electron temperature, and plasma density was studied using Langmuir double probe. The measured surface hardness value of the compound layer is 2190 HV 0.1 for treated sample at plasma power 500 W. The compound thickness continuously increases as the plasma power increases. The highest nitriding rate of 5.88 #mu#m"2/s was recorded when the input plasma power was adjusted at 550 W. This high nitriding rate of treated titanium samples is ascribed to the high concentration of active nitrogen species in the plasma atmosphere and the formed microcracks near to the surface of the sample during the plasma ...

Energy Technology Data Exchange (ETDEWEB)

It has been discovered that the presence of MoO/sub 3/ lowers the ..cap alpha..-..beta.. transition in Sb/sub 2/O/sub 4/ from 935 to 850/sup 0/C with concurrent dissolution of Mo in the high-temperature (..beta..) form. The structure of Mo-doped ..beta..-Sb/sub 2/O/sub 4/ has been investigated by powder neutron diffraction, extended X-ray absorption fine structure (EXAFS) and Raman spectroscopies, and scanning-electron microscopy (SEM). Cell parameters: a = 12.0571 (12) A, b = 4.8335 (1) A, c = 5.3838 (6) A, ..beta.. = 105.579 (5)/sup 0/, monoclinic, space group C2/c, Z = 4. Combining the results of these techniques leads to the hypothesis that Mo is located interstitially within channels of electron density in the Sb/sub 2/O/sub 4/ structure with concurrent vacancy of two Sb/sup III/ atoms. There is no apparent oxygen deficiency in the resulting structure. 25 references, 6 figures, 3 tables.

International Nuclear Information System (INIS)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical computations of high concentration phosphorus ...

International Nuclear Information System (INIS)

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous transition temperature and the super linear ...

International Nuclear Information System (INIS)

Classification and ranking of the solid solution on their reaction to the irradiation is suggested on the basis of binary system structure controlled by mixing enthalpy sign, melting temperatures relation of components and solidus curves slope. Several combinations of these characteristics permit to pick out three groups of substitutional elements capable of forming the vacancy-solute atom complexes either low-mobile or fast-mobile ones as compared to monovacancies migration. The radiation hardening (and embrittlement) of binary alloys should be intensified respectively either due to heterogeneous point defect clusters nucleation on solute traps or due to solute atom clusters/ precipitate formation. A local cohesion decrease may also occur especially if low-melting elements (characterized by low surface energy) are segregating on internal sinks or grain boundaries. The predicted specifics of different alloy group under irradiation and during post-irradiation ...

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and dislocation loop were observed from the time-evolutionary study ...

Energy Technology Data Exchange (ETDEWEB)

The volume diffusion of Mo in austenitic CrNiMo(N)-steels was studied using the sandwich method. Accordingly the interdiffusion coefficients of Mo were found to be independent of its concentration for the given steel composition with 12 to 19 wt.% Cr, 12 to 16 wt.% Ni, 0 to 2 wt.% Mo and 0 to 0.27 wt.% N and within the temperature range from 1283 to 1523 K. The diffusivity of Mo is greater than that of Cr, Ni and Fe in such steels. The diffusion parameters of Mo are decreased by alloying addition of nearly 0.25 wt.% N in steel; possibly as a result of lattice expansion or increasing vacancy concentration caused by N. Small variations in Cr and Ni initial contents of examined specimens showed negligible effect on the absolut values of interdiffusion coefficients of Mo. (orig.).

Energy Technology Data Exchange (ETDEWEB)

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy ...

Energy Technology Data Exchange (ETDEWEB)

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.

Energy Technology Data Exchange (ETDEWEB)

Microwave dielectric properties and far-infrared reflectivity spectra of (Zr{sub 0.8}Sn{sub 0.2})TiO{sub 4} ceramics with 1.0mol.% Sb{sub 2}O{sub 5} or WO{sub 3} were investigated in the various sintering atmospheres. The Q{center_dot}f value of the specimens sintered in oxygen atmosphere was enhanced due to the decrease of lattice anharmonic interaction resulting from the decrease of oxygen vacancies, whereas the dielectric constants remained constant regardless of sintering atmosphere. The effects of the sintering atmosphere on the changes of ionic and electronic polarization and the intrinsic microwave losses of the specimens were investigated by using the infrared reflectivity spectra from 50 to 4000cm{sup -1}, which were evaluated using Kramers-Kronig analysis and classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the reflectivity data was in good agreement with the results by the post-resonant ...

International Nuclear Information System (INIS)

Radionuclides exhibiting in decaying a strong interaction between nucleus and electron shell (especially electron capture and internal conversion) are, in principle, sensitive to their chemical surroundings. Consequently, they can be used to yield chemical information after an appropriate labelling procedure. The information can be extracted from the decay rate variation as well as from their X-ray emission as a response to an inner-shell vacancy creation during nuclear deexcitation. As an example of the former method the relationship between the decay rate of /sup 99m/Tc and the chemical structures of pertechnetate and bis(meso-dimercapto-succinate)oxotechnetate(V) is considered. Lower expectations with respect to measuring techniques are associated with the observation of X-ray emission. For a number of elements (especially 3d transition elements) the K/sub #alpha#//K/sub #betta#/ X-ray intensity ratio was found to be an indicator of the nearest neighbour atoms. ...

International Nuclear Information System (INIS)

In support of Stockpile Stewardship activities, accelerated aging tests on a plutonium alloy enriched with 7.3 at.% of "2"3"8Pu is underway using dilatometry at 35, 50, and 65 deg. C and immersion density measurements of materials stored at 50 deg. C. Changes in density are expected from radiation damage in the lattice and helium in-growth. After 25 equivalent years of aging, the dilatometry data shows that the alloys at 35 deg. C have expanded in volume by 0.11-0.12% and have started to exhibit a near linear expansion behavior primarily caused by the helium accumulation. The average He-to-vacancy ratio from tested specimens was determined to be around 2.55. The model for the lattice damage and helium in-growth accurately represents the volume swelling at 35 deg. C. The density converted from the dilatometry corresponds well to the decreasing density trend of reference plutonium alloys as a function of time.

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these challenges, namely the need ...

Science.gov (United States)

The isomerization of neopentane has been investigated over the 0.76 wt% Pd/SiO{sub 2} catalyst. It is found that after high temperature reduction (HTR, at 873 K) the selectivity for isomerization is much higher than that after low temperature reduction (LTR, at 573 K). A variety of experiments, including kinetic, chemisorption (O{sub 2}, H{sub 2}, and CO), temperature-programmed desorption of H{sub 2}, and X-ray diffraction, showed that this selectivity enhancement cannot be interpreted in terms of H{sub 2} retention by catalyst. Instead, the formation of Pd-Si compound(s) (most probably Pd{sub 3}Si) during HTR seems immediately responsible for the catalytic behavior of HTR Pd/SiO{sub 2} catalysts. A mechanism is proposed for the Pd-SiO{sub 2} interaction in which Pd atoms (or ions) are incorporated into the silica support (via oxygen vacancies) and a new phase of palladium silicide is formed. Regeneration by an oxygen treatment of the HTR sample does not fully ...

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. {copyright} {ital 1996 American ...

Energy Technology Data Exchange (ETDEWEB)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion ...

International Nuclear Information System (INIS)

We present accurate tight-binding parametrizations of the first-principles augmented-plane-wave or linear-augmented-plane-wave band structures of LaCuO_3, La_2CuO_4, Ba_2CuO_4, and the high-temperature superconductor YBa_2Cu_3O_7. We discuss the methodology and efficient application of these fits, including as an example our tight-binding coherent-potential-approximation (CPA) calculations of the effects of disorder on the electronic structure of La/sub 2-//sub x/Ba/sub x/CuO/sub 4-//sub y/. Our CPA calculations support the hypothesis of a rigid-band lowering of the Fermi level for La/sub 2-//sub x/Ba/sub x/CuO_4, enhancing the density of states there. However, for La_2BaCuO/sub 4-//sub y/ they yield the interesting result that oxygen vacancies also lower E/sub F/ and raise N(E/sub F/). This is a significant result for the theory of superconductivity in these materials. In addition to CPA calculations, our parametrizations of the band structures should prove to be ...

International Nuclear Information System (INIS)

In this paper we discuss the results of thermoluminescence (TL) studies carried out on freshly quenched crystals of KBr doped with #approx# 50 ppm of Eu"2"+ ions which were X-irradiated at room temperature. The TL glow curve of this phosphor material consists of three glow peaks at 355, 376 and 398 K whose intensities increased as a function of X-irradiation time. The TL glow peaks were analyzed by the total curve-fitting method in order to obtain the characteristic parameters; activation energy, pre-exponential factor and kinetic order. The spectral character of the emission recorded during thermoluminescence was found to be the same for all glow peaks and consists of a broad band centered at #approx# 420 nm. It is proposed that the model of the TL process most consistent with our experimental results is one in which the Eu"2"+ impurity acts as an electron trap during the irradiation process and that the radiation induced center (partner of an center) and the V_k center (partner of an ...

International Nuclear Information System (INIS)

The hardening and embrittlement of reactor pressure vessel (RPV) steels is of great concern in the actual nuclear power plant life assessment. This embrittlement is caused by irradiation-induced damage, like vacancies, interstitials, solutes and their clusters. The current procedure to estimate material properties for the irradiated pressure vessels is based on Charpy-V tests of identical material located at the inner shell of the reactor. But the reason for the embrittlement of the materials is not yet totally known. The real nature of the irradiation damage should thus be examined as well as its evolution in time. Fe-Cu binary alloys are often used to mimic the behaviour of such steels. Their study allows. Identifying some of the defects responsible of the hardening, especially when compared to pure iron or C-micro-alloyed iron. More recently the influence of manganese and nickel in low-Cu RPV steels has become a significant topic. Thus in contrast with the ...

Energy Technology Data Exchange (ETDEWEB)

Point-contact (PC) investigations on the title compound in the normal and superconducting (SC) state (T{sub c}{approx_equal}10.6 K) are presented. The T-dependence of two SC gaps in TmNi{sub 2}B{sub 2}C determined by Andreev-reflection spectroscopy deviates from the BCS behavior in displaying a maximum at about T{sub c}/2. Additional evidence for the presence of a 2nd gap half as large as the main gap is given. For the first time ''reentrant'' features were found in the Andreev-reflection spectra measured in magnetic fields. The PC spectroscopy of the fermion-boson interaction in TmNi{sub 2}B{sub 2}C reveals a pronounced phonon maximum at 9.5 meV and a more smeared one around 15 meV, while at higher energies the PC spectra are almost featureless. Additionally, the intense peak slightly above 3 meV observed in the PC spectra of TmNi{sub 2}B{sub 2}C, is presumably caused by crystalline-electric-field excitations. The peak near 1 meV detected for some ...

Energy Technology Data Exchange (ETDEWEB)

In order to understand the chemistry of altermetal dopants in antimony oxide, the detailed structural characterization of two ..beta..-Sb/sub 2/O/sub 4/ compounds is reported, Mo-doped ..beta..-Sb/sub 2/O/sub 4/ (1.5 metal%) and V-doped ..beta..-Sb/sub 2/O/sub 4/ (5 metal%). The methods used to characterize these materials are X-ray and neutron diffraction, scanning electron microscopy, Mo K-edge extended X-ray absorption fine structure spectroscopy, and elemental analysis. The atomic position of each of these dopants in Sb/sub 2/O/sub 4/ is radically different as is the overall effect on the host structure. Molybdenum does not substitute for Sb atoms, rather the Mo atoms are found in channels of electron density formed by Sb/sup 3 +/ lone pairs. The two nearest Sb/sup 3 +/ are absent and the oxygen stoichiometry is preserved. The formula is Sb/sub 1.97/Mo/sub 0.015/O/sub 4/. Vanadium incorporates substitutionally for the Sb/sup 3 +/ atoms and there are random oxygen ...

Energy Technology Data Exchange (ETDEWEB)

Lithium-ion batteries are becoming more and more important not only for portable electronic devices, but also in prevision of high power electric vehicles. In such an optic, deep studies regarding all the components of a secondary battery are in development. In this study, high voltage cathode materials have been selected. Crystals with spinel structure have a 3D vacancy pathway suitable for Li-ions transport. The material under study was LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} doped with magnesium replacing the nickel. Various samples were synthesized via three different routes: a solid-state method, a modified sol-gel method and a xerogel method. The structure and morphology of the powders were analyzed with HRTEM and XRD. Electrochemical tests were also performed. A wide range of particle sizes (from micro to nanosize) was the result of the different synthesis routes. Unfortunately pure materials were not always obtained. The electrochemical tests showed improvement of ...

Energy Technology Data Exchange (ETDEWEB)

The effect that different chemical and physical atomic environments can have on the relative intensities of radiative electron transitions from the filling of K shell vacancies was investigated. The method used involved the detection of photoionization induced X-ray fluorescence. An experimental system based on a hyper pure germanium detector (HPGE) was used to measure the relative K-L and K-M X-ray yields from the photofluorescence of a series of lanthanide elements and compounds. A background subtraction and peak integration strategy was employed which accounted for scattering in the samples and scattering of the flux from the radioisotope photoionization sources. Analysis of the data resulted in a tabulation of relative K/sub ..beta..//K/sub ..cap alpha../ X-ray intensity ratios. The measured relative K/sub ..beta..//K/sub ..cap alpha../ X-ray intensity ratios were compared to the calculated values predicted by the theoretical development of Scofield and the ...

Energy Technology Data Exchange (ETDEWEB)

Single crystals of trigonal Cr{sub 2}Te{sub 3}, monoclinic Cr{sub 5}Te{sub 8}, and trigonal Cr{sub 5}Te{sub 8} were prepared and the single crystal structures were determined. The structures are related to the NiAs structure type by successive removal of Cr in every second metal atom layer parallel to the c axis. The strong relationship between the structures is evidenced by their very similar X-ray powder patterns. In trigonal Cr{sub 2}Te{sub 3} excess Cr occupies only one of the two possible sites. In monoclinic Cr{sub 5}Te{sub 8} the Cr atoms occupy four different crystallographic sites. The resulting ordering of the vacancies is significantly different from the hitherto reported crystal structures of transition metal chalcogenides M{sub 5}X{sub 8}. A slight increase of the tellurium content leads to an order-disorder transition from the monoclinic to a trigonal phase. The Cr atoms are located on four crystallographically different sites leading to the formation ...

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed ...