ultrathin transnasal esophagogastroduodenoscopy: Topics by WorldWideScience.org

Die Behandlung laryngealer Bewegungsst?rungen mit Botulinumtoxinen

This short paper (abstract) describes the characteristics and performances of prototypes of ultra-thin lithium micro-batteries (thickness < 0.2 mm) which can be incorporated into microelectronic circuits. (J.S.)

1996-12-31

British Library Electronic Table of Contents (United Kingdom)

ZusammenfassungDie Botulinumtoxinbehandlung ist eine etablierte Methode in der Behandlung von spasmodischen Dysphonien. Prinzipiell kann eine Behandlung transkutan zervikal, transoral mit einer gebogenen Spritze unter visueller Kontrolle w?hrend der Laryngoskopie sowie mittels flexibler Endoskope bzw. Videoendoskope mit Arbeitskanal erfolgen. Insbesondere die transkutane Injektion unter Larynx-EMG-Kontrolle (LEMG) ist ein verh?ltnism??ig einfaches Verfahren. Aufgrund der visuellen Kontrolle bei transoral oder flexibel transnasal verabreichtem Botulinumtoxin scheint eine bessere Wirksamkeit zu bestehen. Aus verschiedenen Gr?nden kann dieses Verfahren aber nicht bei allen Patienten verwendet werden. Wir berichten ?ber unsere Erfahrungen mit den verschiedenen Techniken und unsere Erw?gungen i...

2007-01-01

Ultrathin coatings of nanoporous materials as property enhancements for advanced functional materials

Magnetic response of ultrathin Fe on MgO: A polarized neutron reflectometry study

This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials ...

Ultra-thin {sup 242m}Am fuel elements in nuclear reactors

The magnetization of ultrathin bcc Fe films (two and three monolayers) on MgO was measured and compared with the behavior predicted for a two-dimensional ferromagnet. The experiment indicated that no hysteresis was present in the magnetization. Instead, the magnetization at low temperature was affected by a marked field cooling effect. These observations lead to the conclusion that films of Fe on MgO of such thickness exhibit superparamagnetic behavior as if they were not entirely continuous. In contrast, films thicker than five monolayers exhibit a magnetic response close to that of bulk iron.

1994-11-15

Layer-by-layer self-assembly of polyimide precursor/layered double hydroxide ultrathin films

There is a growing interest in using {sup 242m}Am as a nuclear fuel. The advantages of {sup 242m}Am as a nuclear fuel derive from the fact that {sup 242m}Am has the highest thermal fission cross section. The thermal capture cross section is relatively low and the number of neutrons per thermal fission is high. These nuclear properties make it possible to obtain nuclear criticality with ultra-thin fuel elements. The possibility of having ultra-thin fuel elements enables the use of these fission products directly, without the necessity of converting their energy to heat, as is done in conventional reactors. There are three options of using such highly energetic and highly ionized fission products. - Using the fission products themselves for ionic propulsion. - Using the fission products in an MHD generator, in order to obtain electricity directly. - Using the fission products to heat a gas up to a high temperature for propulsion purposes. In this ...

2000-12-01

UPS fine structures of highest occupied band in vanadyl-phthalocyanine ultrathin film

The layer-by-layer (LBL) self-assembly has been extensively used as a simple and effective method for the preparation of polyelectrolyte multilayer films. In this work, we utilized this unique method to prepare polyimide precursor/layered double hydroxide (LDH) ultrathin films. Well-crystallized Co-Al-CO_3 LDH and subsequent anion exchanged Co-Al-NO_3 LDH were prepared and characterized by scanning electron microscopy and X-ray diffraction (XRD). By vigorous shaking of the as-prepared Co-Al-NO_3 LDH, positively charged and exfoliated LDH nanosheets were obtained. Atomic force microscopy and XRD investigations indicated the delamination of LDH nanosheets. The precursor of polyimide, poly(amic acid) tertiary amine salt (PAS) was prepared by the polycondensation of dianhydride and diamine, and subsequent amine salt formation. By using the LBL method, heterogeneous ultrathin films of PAS and LDH were prepared. The formation of the ordered ...

2010-09-30

Design and fabrication of large ultra-thin PIN detector with membrane stress deviation

Ultraviolet photoelectron spectra were measured for vanadyl phthalocyanine (VOPc) ultrathin films prepared on graphite to study effects of the molecular orientation and the electric dipole layer on the organic electronic states. VOPc has a permanent electric dipole perpendicular to the molecular plane, hence a well-defined electric dipole layer could be intentionally prepared by using the oriented monolayer. The observed binding-energy difference of the highest occupied molecular orbital (HOMO) bands between the oriented monolayer and the double layer was found to agree with the vacuum level shift, leading to a conclusion that the molecular energy level with respect to the substrate Fermi level is changed when the molecule is in the electric dipole layer.

2005-06-15

In situ spectroscopic and corrosion studies of ultra-thin gradient plasma polymer layers on zinc

In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.

2010-09-15

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

By means of an audio frequency plasma polymerisation ultra-thin gradient plasma polymer layers were deposited on zinc and zinc-coated iron. The aim was to generate an interfacial polymeric layer which bonds to an oxidised metal as well as to a subsequently applied organic coating and acts as an interfacial barrier layer for ions and water. Surface modifications were done in an in situ plasma cell with infrared reflection absorption spectroscopy (IRRAS). The zinc surface was first activated by an oxygen plasma to provide a freshly oxidised and contamination free oxide surface. The intermediate stages of the surface reactions could be revealed. Carbon dioxide molecules as oxidation products adsorbed on the growing zinc oxide and were desorbed at a later stage. An organosilicon plasma polymer was deposited directly on top of the oxide layer from a hexamethyldisilane (HMDS) plasma. Afterwards a cyclohexene (CHEX)/hexamethyldisilane co-plasma polymer was deposited. The ...

2003-07-15

Technologies for high speed rolling and control of gauge in cold tandem mill for ultra-thin gauge strip; Gokuusu reikan atsuenki ni okeru kosoku atsuen gijutsu oyobi itaatsu seigyo gijutsu

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be noted that the ...

2004-06-01

Electrical properties of ultra-thin oxynitrided layer using N{sub 2}O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

This paper describes high speed rolling and gauge control in cold tandem mill for ultra-thin gauge strip at the Chiba Works of Kawasaki Steel Corporation. To improve the plate-out property of rolling oil, cationic polymeric coagulant was prepared. Rolling oil with cohesion independent of inorganic inclusions or phosphatide was developed, to improve the lubrication for cold rolling, remarkably. In addition, a low-cost Ti-enhanced work roll having high wear resistance and excellent grindability was developed. Rolling can be conducted at the optimal rolling roughness and operation can be performed at the highest rolling speed independent of the rolling treatment amount. Rolling speed at 2800 m/min was confirmed by developing the rolling oil with excellent lubrication and the work roll having high wear resistance. For the improvement of strip thickness accuracy at the steady state rolling, use of the backup roll as roller bearing was more effective rather than the ...

1996-09-01

Electrical properties of ultra-thin oxynitrided layer using N_2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics demonstrated that the ...

2007-06-04

Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors

2007-06-04

Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted ...

2005-01-01

{sup 242m}Am fueled nuclear battery

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted in ...

2005-01-01

Ultra-thin {sup 242m}Am fuel elements in nuclear reactors. II

A nuclear battery based on the direct energy conversion of the fission products is presented. Such energy conversion is possible by using a nuclear reactor with ultra-thin fuel elements of 0.2 {mu}m of {sup 242m}Am. The amount of nuclear fuel is 376 g and the dimensions of the battery are 2.4x2.4x2.4 m{sup 3} (including the vacuum spacing), with a BeO moderator and Be electrodes. The total power of the reactor is 10.6 MW and the electrical power is 0.652 MW.

2004-10-01

Enhancement of Heat and Mass Transfer in Mechanically Contstrained Ultra Thin Films

There is growing interest in using {sup 242m}Am as a nuclear fuel for space reactors and nuclear batteries. In this paper, we discuss different {sup 242m}Am enrichments, as well as fuel weight requirements, to produce a critical reactor. It was found that relatively low enrichments of {sup 242m}Am, about 10 w/o, are enough to guarantee criticality. Such low enrichments might eliminate the need for a {sup 242m}Am enrichment process. It was also found that the best results for low {sup 242m}Am requirements are obtained with a moderator to fuel volume ratio of 10,000.

2004-04-21

Size-controlled Ag nanoparticle modified WO3 composite films for adjustment of electrochromic properties

Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be ...

2005-01-01

British Library Electronic Table of Contents (United Kingdom)

Size-controllable Ag nanoparticle ultrathin films, which were fabricated by vacuum deposition method from high purity Ag wire onto cleaned indium tin oxide conducting glass, have different color fabricated by variation of preparation conditions. The UV/Vis spectra showed that optical absorption peak of these Ag nanoparticle films can be tuned in a range from 457nm to >650nm. Scanning electron microscopy images showed that with increasing film thickness Ag particle size was larger. Ag/WO3 composite films were prepared by cathodic electrodeposition of WO3 onto the surface of Ag nanoparticle films. Spectroelectrochemistry and electrochromic properties of the resulting composite films were characterized. It was found that the electrochemical and electrochromatic properties of the composite fil...

2010-01-01

Ionically conductive thin polymer films prepared by plasma polymerization. Pt. 7. Preparation and characterization of solid polymer electrolyte having fixed carboxylic acid groups with single mobile species

Ionically conductive thin polymer films prepared by plasma polymerization

Ultra-thin, uniform, pinhole-free solid polymer electrolyte films having a fixed carboxylic ester group of approximately 1 {mu}m thickness were prepared by polymerization of methyl acrylate and tris(2-methoxyethoxy)vinylsilane in a glow discharge plasma. The carboxylic ester group of the plasma polymer were transformed to lithium carboxylate groups by treatment with lithium iodide. This process give a single lithium ion conductive film. These solid polymer electrolyte films showed ionic conductivities of the order of 10{sup -8} S cm{sup -1} (10{sup 4} {omega} cm{sup 2} resistance per unit area) at room temperature. (orig.).

1990-08-01

1 2

Friction in ultra-thin conjunction of valve seals of pressurised metered dose inhalers

Ultrathin solid polymer electrolyte membranes containing sulfonic ester groups were prepared by polymerization of methyl benzenesulfonate and octamethylcyclotetrasiloxane in a glow discharge plasma. The sulfonic ester groups of the plasma polymer were transformed to lithium sulfonate groups by treatment with lithium iodide. Hybridization of this plasma polymer containing the lithium sulfonate groups with poly(ethylene oxide) (average Mw 300) resulted in the formation of a single lithium ion conductive film. The hybrid polymer electrolyte films were about 1 #mu#m thick, pinhole-free, adherent to various substrates, and showed ionic conductivities at 60 degrees C of the order of 10"- "6 S cm"- "1 (10"2 #OMEGA# cm"2 resistance per unit area of as-prepared solid polymer electrolyte). This material shows promise for electrochemical applications such as all solid-state lithium batteries, sensors, and electrochemical display devices.

British Library Electronic Table of Contents (United Kingdom)

In many drug dispensing devices, such as syringes and inhalers, an elatomeric gasket is used to prevent the formulation from leaking from the chamber. During device actuation, the seal is subjected to friction, which in turn causes its deformation and can cause unintentional leakage, thus dose variability. Additionally, friction of seal is responsible for a host of potential problems such undue effort required for actuation and potential wear. The mechanism of friction generation in the seal conjunction is complex, arising from adhesion of rubber in contact with the moving interface, viscous action of a thin film of fluid and deformation of seal asperities. Therefore, the first step in understanding the conjunctional behaviour of rubber seals is a fundamental study of mechanisms of frictio...

2010-01-01

Spin-resolved magnetic studies of focused ion beam etched nano-sized magnetic structures

Perpendicular magnetic anisotropy of ultrathin FeCo alloy films on Pd(0 0 1) surface: First principles study

Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of ...

2005-04-01

XPS/AES Study of Electrical and Chemical Properties of Pd/SiC Interface

Using the full potential linearized augmented plane wave (FLAPW) method, thickness dependent magnetic anisotropy of ultrathin FeCo alloy films in the range of 1 monolayer (ML) to 5 ML coverage on Pd(0 0 1) surface has been explored. We have found that the FeCo alloy films have close to half metallic state and well-known surface enhancement in thin film magnetism is observed in Fe atom, whereas the Co has rather stable magnetic moment. However, the largest magnetic moment in Fe and Co is found at 1 ML thickness. Interestingly, it has been observed that the interface magnetic moments of Fe and Co are almost the same as those of surface elements. The similar trend exists in orbital magnetic moment. This indicates that the strong hybridization between interface FeCo alloy and Pd gives rise to the large magnetic moment. Theoretically calculated magnetic anisotropy shows that the 1 ML FeCo alloy has in-plane magnetization, but the spin reorientation transition (SRT) from ...

2009-06-01

Study of the crystallographic architecture of corals at the nanoscale by scanning transmission X-ray microscopy and transmission electron microscopy.

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction at the Pd/SiC interface will be discussed. ...

1997-11-01

Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds.

We have investigated the nanotexture and crystallographic orientation of aragonite in a coral skeleton using synchrotron-based scanning transmission X-ray microscopy (STXM) and transmission electron microscopy (TEM). Polarization-dependent STXM imaging at 40-nm spatial resolution was used to obtain an orientation map of the c-axis of aragonite on a focused ion beam milled ultrathin section of a Porites coral. This imaging showed that one of the basic units of coral skeletons, referred to as the center of calcification (COC), consists of a cluster of 100-nm aragonite globules crystallographically aligned over several micrometers with a fan-like distribution and with the properties of single crystals at the mesoscale. The remainder of the skeleton consists of aragonite single-crystal fibers in crystallographic continuity with the nanoglobules comprising the COC. Our observation provides information on the nm-scale processes that led to biomineral formation in this ...

2011-05-05

High sensitivity detection and characterization of the chemical state of trace element contamination on silicon wafers

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method provides a new avenue ...

2011-05-17

CERN Document Server

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray fluorescence (SR-TXRF) ...

2003-01-01

High resolution scanning electron microscopy of plasmodesmata.

Manipulation of spin reorientation transition by Au capping in body-centered cubic Ni(001) film

Symplastic transport occurs between neighbouring plant cells through functionally and structurally dynamic channels called plasmodesmata (PD). Relatively little is known about the composition of PD or the mechanisms that facilitate molecular transport into neighbouring cells. While transmission electron microscopy (TEM) provides 2-dimensional information about the structural components of PD, 3-dimensional information is difficult to extract from ultrathin sections. This study has exploited high-resolution scanning electron microscopy (HRSEM) to reveal the 3-dimensional morphology of PD in the cell walls of algae, ferns and higher plants. Varied patterns of PD were observed in the walls, ranging from uniformly distributed individual PD to discrete clusters. Occasionally the thick walls of the giant alga Chara were fractured, revealing the surface morphology of PD within. External structures such as spokes, spirals and mesh were observed surrounding the PD. ...

2011-05-28

Large perpendicular magnetic anisotropy of ultrathin Ru and Rh films on a NiAl(001) surface

The thickness dependent magnetic properties of artificially prepared ultrathin body-centered cubic Ni films have been explored using the all electron full potential linearized augmented plane wave (FLAPW) method. We have considered two types of BCC Ni(001) films: (i) pure BCC Ni(001) and (ii) Au capped BCC Ni(001) in the range from 1 monolayer (ML) to 4 ML of Au capping coverage. The average magnetic moment of pure BCC Ni(001) is about 0.63 #mu#_B and a typical surface enhancement is found with a magnetic moment of 0.78 #mu#_B. In the presence of an Au capping layer, the magnetic moment of interface Ni is strongly suppressed to approximately 0.5 #mu#_B and this causes a reduction of average magnetic moment. Nevertheless, the Au adlayer has no meaningful induced magnetic moment. The BCC pure Ni(001) films always have in-plane magnetization up to 11 ML, but very interestingly the Au/Ni(001) shows a thickness dependent spin reorientation transition (SRT) from in-plane ...

2008-12-03

Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces

Using the full potential linearized augmented plane wave (FLAPW) method, the magnetic properties of two-dimensional Ru and Rh monolayers (MLs) on a NiAl(001) surface have been investigated. It has been found that free standing one monolayer Ru and Rh films have ferromagnetic ground state with magnetic moments of 2.21 and 1.48 #mu#_B, respectively. The ferromagnetism is still observed even on a Ni terminated NiAl(001) surface, while no magnetic state is found on an Al terminated surface. The calculated magnetic moments of Ru and Rh atoms are 1.56 and 0.88 #mu#_B, respectively. In addition, an induced magnetic moment in surface Ni is observed. It has been found that the free standing Ru film has perpendicular magnetization to the film surface with a magnetocrystalline anisotropy (MCA) energy of 0.66 meV/atom, while an in-plane MCA energy of 0.37 meV/atom is achieved in Rh film. Very interestingly, we find that both Ru/NiAl(001) and Rh/NiAl(001) films have perpendicular magnetic ...

2010-10-27

Electrochemical and surface analytical studies of the interaction of nitrogen with key alloying elements in stainless steels

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued beneath the Si surface. The part of the #beta#-FeSi_2 nanodot beneath the surface ...

2005-08-15

Electrochemical and surface analytical studies of the interaction of nitrogen with key alloying elements in stainless steels

Surface analytical studies of high nitrogen austenitic stainless steels exposed to deaerated 0.1M HCl have revealed that nitrogen alloying additions influence the composition of salt layers and the passive film/alloy interface. In this study the authors employ electrochemical techniques and variable angle X-ray Photoelectron Spectroscopy (XPS) to examine the passive films formed on a series of austenitic stainless steels, Fe18Cr8Ni, Fe18Cr8Ni0.2N, Fe20Cr20Ni, Fe20Cr20Ni6Mo and Fe20Cr20Ni6Mo0.2N, in acidic chloride aqueous solution. In addition, several other model alloys, Fe19Cr, Fe19Cr9Ni, Fe19Cr2.5Mo, and Fe19Cr9Ni2.5Mo, were examined before and after electrochemical surface nitriding, a technique proven to have an effect analogous to N alloying. It was shown that nitrogen, nickel and molybdenum additions independently and in certain combinations stimulate selective dissolution of iron, resulting in a significant enrichment of chromium beneath the passive film. In most cases, the ...

1995-12-01