UK PubMed Central (United Kingdom)

Background/AimsAlthough endoscopic ultrasound guided fine needle aspiration (EUS-FNA) has been introduced and its use has been increasing in Korea, there have not been many reports...Full Text Available

International Nuclear Information System (INIS)

In this paper, we put forward a systematic method to analyze, control and evaluate the safety issues of medical robotics. We created a safety model that consists of three axes to analyze safety factors. Software and hardware are the two material axes. The third axis is the policy that controls all phases of design, production, testing and application of the robot system. The policy was defined as hazard identification and safety insurance control (HISIC) that includes seven principles: definitions and requirements, hazard identification, safety insurance control, safety critical limits, monitoring and control, verification and validation, system log and documentation. HISIC was implemented in the development of a robot for urological applications that was known as URObot. The URObot is a universal robot with different modules adaptable for 3D ultrasound image-guided interstitial laser coagulation, radiation seed ...

UK PubMed Central (United Kingdom)

Percutaneous coronary intervention can be associated with distal embolization of thrombotic material causing myocardial necrosis and infarction.We discuss the role of intravascular imaging to...Full Text Available

Science.gov (United States)

PMID:20864132

British Library Electronic Table of Contents (United Kingdom)

Objective To report the clinical response to image-guided percutaneous cryotherapy (IPC) for the palliative management of localized metastases in patients with gynecologic malignancies. Methods Institutional review board approval and patient consent were obtained. Gynecologic oncology patients were identified from our institution's cryotherapy database from August 2003 to August 2007. Cryotherapy was performed with 2.4?mm diameter probes (Endocare, Irvine, CA) with ultrasound or computerized tomography (CT) guidance under conscious sedation and local anesthesia. Follow-up was conducted by imaging studies and clinical encounters, using Response Evaluation Criteria in Solid Tumors (RECIST criteria). Results Twenty-eight ablation sessions were performed for 41 metastatic foci in 15 patients w...

International Nuclear Information System (INIS)

Background: Pleural biopsy and cytology are standard procedures for the investigation of pleural disease. Recent medical literature has suggested that image-guided pleural biopsy shows improved sensitivity for the diagnosis of pleural malignancy, when compared with the more commonly performed reverse bevel needle biopsy such as Abrams' needle. In our centre there has been an increasing trend towards performing image-guided pleural biopsies, and to our knowledge there is no large published series documenting the complication rate and diagnostic yield. Methods: The radiology and pathology databases were searched for all image-guided [computed tomography (CT) and ultrasound (US)] pleural biopsies from January 2001 to December 2004. All imaging and histology were reviewed, and final diagnostic information about patients was obtained from the respiratory multidisciplinary team database and patient notes. A ...

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International Nuclear Information System (INIS)

The results of interstitial brachytherapy in 13 patients with malignant brain tumors (malignant glioma 9 cases, metastatic brain tumor 4 cases) were reported. In all patients, Ir-192 thin wires were implanted temporarily in afterloading catheters, which were implanted appropriately by means of MRI or CT guided stereotactic technique. Clinical results on CT scan were as follows: CR (complete response) 1 case, PR (partial response) 6 cases and NC (no change) 6 cases. Even in the NC group, tumor growth was inhibited temporarily. Tumor free intervals were ranged 2-17 months. In early series, the intervals were about 2 months due to incomplete arrangement of radioactive implants. In recent series, prolongation of tumor free interval more than 12 months was achieved due to precise arrangements of implants. MRI guided stereotactic interstitial brachytherapy may provide ...

CERN Document Server

The entrepreneur's guide to managing information technology

International Nuclear Information System (INIS)

After five years of implantation of a program for classification and signalling of restricted areas in the IPEN-CNEN-SP, we noticed that the applied measures of radio protection contributed for the improvement of the system of occupational radiological protection, promoting an improvement in the security of the workers, towards the planning in the execution of the activities involving the use of sources of ionizing radiation. Later, during the implantation of this program, the service of occupational radiological protection, there was great difficulty to conciliate its necessities in terms of security signalling, face the absence of existing standardisation in the country for the minimum disposals on the subject in question. Nowadays there are different interpretations of the specific criteria and many effective normative documents that exist in the country. This work presents as proposal the elaboration of a technical ...

KoreaScience (Korea)

Full Text Available

Norwegian Open Research Archives (NORA)

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DEFF Research Database (Denmark)

Purpose To investigate the sensitivity and accuracy of endobronchial ultrasound-guided transbronchial needle aspiration (EBUS-TBNA) for restaging the mediastinum after induction chemotherapy in patients with non-small-cell lung cancer (NSCLC). Patients and Methods One hundred twenty-four consecutive patients with tissue-proven stage IIIA-N2 disease who were treated with induction chemotherapy and who had undergone mediastinal restaging by EBUS-TBNA were reviewed. On the basis of computed tomography, 58 patients were classified as having stable disease and 66 were judged to have had a partial response. All patients subsequently underwent thoracotomy with attempted curative resection and a lymph node dissection regardless of EBUS-TBNA findings. Results Persistent nodal metastases were detected by using EBUS-TBNA in 89 patients (72%). Of the 35 patients in whom no metastases were assessed by EBUS-TBNA, 28 were found to have residual stage IIIA-N2 disease at ...

Energy Technology Data Exchange (ETDEWEB)

Fiber delivered laser pulses emulsify thrombus by mechanical stresses that include a combination of pressure, tension and shear stress. Laser radiation is delivered to the locality of a thrombus and the radiation is absorbed by blood, blood dot, or other present materials. The combination of a leading pressure wave and subsequent vapor bubble cause efficient, emulsification of thrombus. Operating the laser in a low average power mode alleviates potential thermal complications. The laser is operated in a high repetition rate mode to take advantage of ultrasound frequency effects of thrombus dissolution as well as to decrease the total procedure time. Specific parameter ranges for operation are described. The device includes optical fibers surrounding a lumen intended for flow of a cooling agent. The fibers may be arranged concentrically around the lumen to deliver radiation and heat over as large an area as possible. An alternative design approach incorporates the ...

Energy Technology Data Exchange (ETDEWEB)

We wanted to evaluate the status of self-expandable nitinol stents implanted in the P2 and P3 segments of the popliteal artery in Korean patients. We retrospectively analyzed 189 consecutive patients who underwent endovascular treatment for steno occlusive lesions in the femoropopliteal artery from July 2003 to March 2009, and 18 patients who underwent stent placement in popliteal arterial P2 and P3 segments were finally enrolled. Lesion patency was evaluated by ultrasound or CT angiography, and stent fracture was assessed by plain X-rays at 1, 3, 6 and 12 months and annually thereafter. At the 1-month follow-up, stent fracture (Type 2) was seen in one limb (up to P3, 1 of 18, 6%) and it was identified in seven limbs at the 3-month follow-up (Type 2, Type 3, Type 4) (n = 1: up to P2: n = 6: P3). At the 6-month follow-up, one more fracture (Type 1) (up to P3) was noted. At the 1-year follow-up, there were no additional stent fractures. Just four ...

International Nuclear Information System (INIS)

We report, for the first time to our knowledge, on the active optical planar waveguides in Nd : YAG laser crystals fabricated by O3+ ion implantation at low doses of ?1014 ions cm-2. The reconstructed refractive index profiles based on the measured dark-mode spectroscopy show that an enhanced refractive index well is created in the near-surface region, forming a non-leaky waveguide structure. With thermal annealing treatment at 260 0C for 90 min, the propagation losses of the waveguides could be reduced to ?3 dB cm-1 at a wavelength of 632.8 nm. The micro-luminescence investigation reveals that the emission bands of Nd3+ ions are not significantly affected by the waveguide formation processing, which shows promising potentials for efficient waveguide laser operations at near-infrared wavelength bands.

UK PubMed Central (United Kingdom)

The authors report a case of a cephalopagus conjoined twin that was diagnosed at 29 weeks of gestation despite the mother having had two ultrasounds done previously. The fetus had one head and face,...Full Text Available

UK PubMed Central (United Kingdom)

Although ultrasound arrays were exploited in photoacoustic imaging to improve imaging speed, ultrasound-array-based optical-resolution photoacoustic microscopy (OR-PAM) has never been achieved...Full Text Available

UK PubMed Central (United Kingdom)

Previous ultrasound elasticity imaging experiments supported a generally accepted concept that the hardness of deep venous thrombi increases with thrombus aging. Results also showed that this...Full Text Available

Science.gov (United States)

Peripherally Inserted Central Catheter Insertion Technique

International Science & Technology Center (ISTC)

Development of Oxygen Ion-Implanted Collector materials for Thermal Emission Converters of Thermal Energy into the Electric One.

Energy Technology Data Exchange (ETDEWEB)

Accurate lung tumor tracking in real time is a keystone to image-guided radiotherapy of lung cancers. Existing lung tumor tracking approaches can be roughly grouped into three categories: (1) deriving tumor position from external surrogates; (2) tracking implanted fiducial markers fluoroscopically or electromagnetically; (3) fluoroscopically tracking lung tumor without implanted fiducial markers. The first approach suffers from insufficient accuracy, while the second may not be widely accepted due to the risk of pneumothorax. Previous studies in fluoroscopic markerless tracking are mainly based on template matching methods, which may fail when the tumor boundary is unclear in fluoroscopic images. In this paper we propose a novel markerless tumor tracking algorithm, which employs the correlation between the tumor position and surrogate anatomic features in the image. The positions of the surrogate features are not directly ...

British Library Electronic Table of Contents (United Kingdom)

Aim.- To describe the clinical aspects of implantable cardioverter defibrillators care in Sweden with focus on organisation, the role and education of nurses, patient information and education and areas in need of improvement. Background.- Implantable cardioverter defibrillators implantations have developed rapidly in recent years and are now an established arrhythmia treatment. The expanding indication for implantable cardioverter defibrillators implantation demands new competencies and resources in the implantable cardioverter defibrillators team members. Methods.- Participants were recruited among physicians and nurses in all of the hospitals implanting implantable cardioverter defibrillators (n-=-16). Data were collected by a questionnaire. Additionally, all written educational materia...

Science.gov (United States)

... [5] GT Gullberg, RH Huesman, DNG Roy, J. Qi and BW Reutter, Esti- mation of the parameter covariance matrix for a one-compartment cardiac ...

UK PubMed Central (United Kingdom)

ObjectiveAngiography remains a critical component for diagnostic imaging and therapeutic intervention in peripheral arterial disease (PAD). The goal of this study...Full Text Available

Science.gov (United States)

PMID:4317460

Science.gov (United States)

The purpose of the Joint Task Force Headquarters Master Training Guide (JTF HQ MTG) is to provide a descriptive, performance-oriented training guide to assist leaders in training their units. It also serves as a guide for the JTF Headquarters in actual op...

CERN Document Server

Choosing and Using Statistics

Science.gov (United States)

... A PROGRAM MANAGER'S GUIDE FOR SOFTWARE COST ESTIMATING ... This thesis provides a broad view of the software cost estimating process. ...

UK PubMed Central (United Kingdom)

BackgroundCardiovascular magnetic resonance (CMR) allows volumetric carotid plaque measurement that has advantage over 2-dimensional ultrasound (US) intima-media thickness (IMT)...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

The growth of silver chloride nanoparticles on ancient textile was achieved by sequential dipping steps in alternating bath of potassium chloride and silver nitrate under ultrasound irradiation. The effect of ultrasound irradiation and sequential dipping steps in growth of the AgCl nanoparticles has been studied. These systems depicted a decrease in the particles size accompanying a decrease in the sequential dipping steps. The samples were characterized with powder X-ray diffraction (XRD) and scanning electron microscopy. XRD analyses indicated that the prepared AgCl nanoparticles on fiber were crystalline. The textile samples containing AgCl nanoparticles were tested for their antibacterial efficacy against Escherichia coli and were found to possess significant antibacterial activity.

International Nuclear Information System (INIS)

A prospective comparative study with pathology was performed to assess the clinical value of Computed Tomography (CT) and endoscopic ultrasound (EUS) for nodal staging in lung cancer. A total of 329 nodal stations were dissected or sampled and 755 lymph nodes were examined at histology. On a pre-station basis, CT had greater sensitivity (74%) than EUS (56%), but EUS was more specific (83% versus 93%). The accuracy rates of the two techniques were similar. In conclusion, endoscopic ultrasound should be part of a routine preoperative diagnostic approach to non-small-cell lung cancer., because of its high specificity. Results can be improved when EUS and CT are combined., which suggests that these imaging modalities should be used together in selected patients for the noninvasive staging of non-small-cell lung cancer to identify local lymphatic spread.

Science.gov (United States)

Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implante...

UK PubMed Central (United Kingdom)

Purpose:To provide a literature review of implant related complications from bilateral NewColorIris implantation (Kahn Medical Devices, Panama City, Panama).Methods:A...Full Text Available

Science.gov (United States)

...Seeing-eye or guide dogs will remain in guiding...possible agitation of military police working dogs, seeing-eye or guide...allowed in or around working dog kennels and facilities...used for registering military personnel on...

International Science & Technology Center (ISTC)

Morphological, Electrophysiological and Behavioral Investigations of the Nervous Tissue Developed from the Embryonic Matrix Zone Cells of the Dorsolateral Walls of Lateral Ventricles, Implanted into the Lesioned Regions of the Adult Rat's Brain

UK PubMed Central (United Kingdom)

Fluorescein angiography of the iris was performed on patients with plastic lens implants with cystoid oedema of the macula, and the nature of the vascular changes was compared with controls provided...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

A novel method for non-destructive intramuscular fat (IMF) estimation via spectral ultrasound backscatter analysis of signals obtained from pig carcasses early post mortem is described. A commercial hand-held ultrasound device (center frequency: 2.7MHz) was modified to focus the sound beam to the longissimus muscle at the 2nd/3rd last rib. Time-resolved ultrasound backscatter signals of loin muscle were recorded 45minp.m. on 82 pig carcass sides. Backfat width (d"B"F=18.9+/-3.8mm) and muscle attenuation (@a"m"u"s"c"l"e=.77+/-.15dBMHz^-^1cm^-^1) were assessed from the measured pulse echo data. Other propagation properties of skin, backfat and muscle tissue obtained in a previous investigation were incorporated into the signal pre-processing to minimize parameter estimation artifacts. Spectr...

UK PubMed Central (United Kingdom)

BackgroundThe aim of the present article was to evaluate whether angiogenic parameters as assessed by transvaginal color Doppler ultrasound (TVCD) may predict those prognostic factors...Full Text Available

International Nuclear Information System (INIS)

A 30-year-old man with acquired immune deficiency syndrome (AIDS) and Kaposi's sarcoma had a palpable thyroid mass and cervical lymphadenopathy. Nuclear medicine and ultrasound scans revealed multiple thyroid nodules. Results of biopsy showed Kaposi's sarcoma metastatic to the thyroid.

UK PubMed Central (United Kingdom)

BackgroundLifestyle, genetics and environmental factors are established determinants of bone density. We aimed to describe the bone characteristics of competitive top-ranked Nigerian...Full Text Available

Science.gov (United States)

... UNCLASSIFIED The 60 Minute Network Security Guide ... 15. SUBJECT TERMS IATAC Collection; information security; network security 16. ...

Energy Technology Data Exchange (ETDEWEB)

To study the utility of ultrasound and computed tomography (CT) in case of suspected appendicitis. To determine the diagnostic yield in terms of different clinical contexts and patient characteristics. to assess the costs and benefits of introducing these techniques and propose a protocol for their use. Negative appendectomies, complications and length of hospital stay in a group of 152 patients with suspected appendicitis who underwent ultrasound and CT were compared with those of 180 patients who underwent appendectomy during the same time period, but had not been selected for the first group: these patients costs for each group were calculated. In the first group, the diagnostic value of the clinical signs was also evaluated. The reliability of the clinical signs was limited, while the results with ultrasound and CT were excellent. The incidence of negative appendectomy was 9.6% in the study group and 12.2% in the ...

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Science.gov (United States)

Not Available

KoreaScience (Korea)

Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Statement of problem Porcelain fracture associated with an implant-supported, metal ceramic crown or fixed partial denture occurs at a higher rate than in tooth-supported restorations, according to the literature. Implant-specific and patient-specific causes of ceramic failure have not been fully evaluated. Purpose The purpose of this retrospective study was to evaluate the potential statistical predictors for porcelain fracture of implant-supported, metal ceramic restorations. Material and Methods Over a 6-month period, a consecutive series of patients having previously received implant-supported, metal ceramic fixed restorations were examined during periodic recall appointments. The number of supporting implants, number of dental units, type of restoration, date of prosthesis insertion, ...

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted ...

Energy Technology Data Exchange (ETDEWEB)

This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users Guide. The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users Guide.

CERN Document Server

TCP/IP Sockets in C#

Energy Technology Data Exchange (ETDEWEB)

A brief guide to training and equipment needed to effectively manage victims of radiation accidents. (DT)

Science.gov (United States)

PMID:20576129

Science.gov (United States)

PMID:4447072

International Nuclear Information System (INIS)

The authors report the personal techniques and the results of CT-guided percutaneous drainage of postoperative abdominal fluid collections. CT-guided percutaneous drainage offers many advantages over surgery: it is less invasive, can be repeated and requires no anesthesia, there are not surgery-related risks and lower morbidity and mortality rates. Moreover, subsequent hospitalization is shorter and costs are consequently reduced. The authors conclude that CT-guided percutaneous drainage is the method of choice in the treatment of postoperative abdominal fluid collections.

DEFF Research Database (Denmark)

OBJECTIVE: To evaluate the interobserver agreement of ultrasonographic assessment of finger and toe joints in patients with rheumatoid arthritis (RA) by 2 investigators with different medical backgrounds. METHODS: Ultrasonography and clinical examination were performed on 150 small joints of 30 patients with active RA. A General Electric LOGIQ 500 ultrasound unit with a 7-13-MHz linear array transducer was used. In each patient, 5 preselected small joints (second and third metacarpophalangeal, second proximal interphalangeal, first and second metatarsophalangeal) were examined independently on the same day by 2 ultrasound investigators (an experienced musculoskeletal radiologist and a rheumatologist with limited ultrasound training). Joint effusion, synovial thickening, bone erosions, and power Doppler signal were evaluated in accordance with an introduced 4-grade semiquantitative scoring system, on which the investigators ...

International Nuclear Information System (INIS)

Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and ...

International Nuclear Information System (INIS)

A low-molybdenum austenitic stainless steel (UNS S30100) has been surface implanted with molybdenum ions, using various doses of 50 keV and 140 keV ions at room temperature. It is found that in aqueous sulphate/chloride solutions similar to the constitution of sea-waters the implantation does not affect the potentiostatically-determined critical pitting potential, but does change the density and morphology of corrosion pits. Pitting initiation after the addition of chloride at a fixed potential indicates little change in the time for measurable current increase, but the rate of increase of the current is much lower for implanted material. Detailed examination using optical microscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction suggests that the pits produced in implanted material are hemispherical with smooth covers of unattacked alloy. The use of ...

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

International Nuclear Information System (INIS)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...

Science.gov (United States)

The purpose of this project was to design, build, and characterize the performance of a volume breast ultrasound (VBUS) scanner that images the pendant breast. VBUS scanner design includes a: 1) clinical ultrasound scanner and transducer; 2) scanning table with a hole for the pendant breast; 3) rotational gantry; 4) probe mounting assembly; 5) compressionless breast stabilization device; 6) acquisition, control, reconstruction, and display software. Performance assessment characterized a variety of parameters including: spatial resolution, uniformity, and distortion using high and low contrast test objects in both horizontal and vertical scanning modes. The VBUS scanner modules have been constructed and initial performance evaluated. Approximately 300 scans are acquired over 360 degrees in 18 seconds. Reconstruction requires 25 ms per slice. Test object images depicted hyper- and hypo-echoic masses and demonstrated good resolution, soft tissue ...

British Library Electronic Table of Contents (United Kingdom)

In this work, the antibacterial effect of fluoroquinolones (FQs) upon Escherichia coli (E.coli) was measured with and without application of 40kHz ultrasound (US) stimulation. The research results demonstrated that simultaneous application of 40kHz US apparently enhanced the antibacterial effectiveness of FQs. That is, the synergistic effect was observed and the bacterial viability was reduced when FQs and US were combined. In addition, various influencing factors, such as FQs drug concentration, US irradiation time and solution temperature, on the inhibition of E.coli were also investigated. The antibacterial activity was enhanced apparently with increasing of FQs drug concentration, US irradiation time and solution temperature. Furthermore, we discussed preliminarily the mechanism of US ...

British Library Electronic Table of Contents (United Kingdom)

Background This study aimed to evaluate the feasibility, safety, and follow-up results of endoscopic papilletomy (ESP) with pancreatic and biliary duct stent placement for ampullary tumors. The therapeutic approach to benign ampullary tumors remains unsettled. The ESP procedure is a curative treatment option for benign papillary tumors, but ESP raises concerns about a relatively high risk for procedure-related complications such as pancreatitis. A pancreatic stent may protect against complications. Methods Between September 2000 and June 2008, 36 patients with ampullary tumors confined to the mucosa and no intraductal tumor growth underwent ESP. The preprocedural diagnostic tools included endoscopic ultrasound, transpapillary intraductal ultrasound, and endoscopic retrograde cholangiopancr...

UK PubMed Central (United Kingdom)

BackgroundModern metal-on-metal hip resurfacing implants are being increasingly used for young and active patients, although the long-term outcome and failure mechanisms of these...Full Text Available

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant ...

UK PubMed Central (United Kingdom)

Experienced users of the Clarion cochlear implant were tested acutely with the HiResolution (HiRes) and HiRes Fidelity120 (F120) processing strategies. Three psychophysically-based tests were...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundThe aim of this study is to examine how clinicians and patients negotiate clinical need and treatment decisions within a context of finite resources. Dental implant treatment...Full Text Available

UK PubMed Central (United Kingdom)

The latest-generation cochlear implant devices provide many deaf patients with good speech recognition in quiet listening conditions. However, speech recognition deteriorates rapidly as the level of...Full Text Available

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si ...

UK PubMed Central (United Kingdom)

BackgroundOne-stage implant placement has clinically acceptable treatment outcomes. Among other advantages, it may allow investigation of early wound healing. The...Full Text Available

UK PubMed Central (United Kingdom)

Although collagen-containing implants are widely used in various surgical applications, there has been relatively little attention paid to the possibility that this type of biomaterial may undergo pathologic...Full Text Available

Science.gov (United States)

OF VOCALIZED SPEECH THROUGH. ANALYSIS OF NEURAL SIGNALS. " SYNTHETIC TELEPATHY- WIRELESS. TRANSMISSION OF DECODED. THOUGHTS. " IMPLANTABLE MEMORY-ELIMINATES ...

Science.gov (United States)

... central venous catheters (tunneled [eg, Hickman], subcutaneously implanted [eg, Porta-cath], and nontunneled), peripherally inserted central venous catheters ...

Energy Technology Data Exchange (ETDEWEB)

This guide has been written to introduce growers of Short Rotation Coppice (SRC) to the principles and need for cold storage of planting material. The main types of cold store are described. It also provides assistance in the selection of suitable stores and how these are located nationally. (author)

Energy Technology Data Exchange (ETDEWEB)

The guiding mechanism is attached by a hinge (swivel) to the supporting frame, and the frame is equipped by hinges (swivels) with hydraulic or pneumatic cylinders mounted on its ends and is attached by hinges (swivels) to the coke ejector and guide respectively. This increases the productivity and efficiency of operating the system.

Energy Technology Data Exchange (ETDEWEB)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

International Nuclear Information System (INIS)

In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)

Science.gov (United States)

... These requirements may be expressed in terms of MIL-STD-2073-1, DoD Material Procedures for Development and Application of Packaging ...

Science.gov (United States)

... 2-22 Page 31. The mercury barometer operates on the principle of air pressure forcing the mercury column up an evacuated tube. ...

Science.gov (United States)

Sep 2, 2008 ... Abstract: This tutorial is intended to serve as a guide towards proper hazardous waste management. Knowing the regulations, different ...

Energy Technology Data Exchange (ETDEWEB)

The ROI Proposal Preparation Guide is a tool to assist Hanford waste generators in preparing ROI proposal forms for submittal to Department of Energy, Richland Operations Office (DOE/RL) for funding. The guide describes the requirements for submitting an ROI proposal and provides examples of completed ROI forms. The intent is to assist waste generators in identifying projects that meet the criteria, provide information necessary to complete the ROI forms, and submit a proposal that is eligible to receive funding.

UK PubMed Central (United Kingdom)

This case report presents the prenatal diagnosis of conjoined twins at 7 weeks and 6 days’ gestation according to the last menstrual period and 6 weeks and 4 days’ gestation according...Full Text Available

International Nuclear Information System (INIS)

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

Energy Technology Data Exchange (ETDEWEB)

P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

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A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows ...

International Nuclear Information System (INIS)

Titanium and its alloy Ti6Al4V enjoy widespread use in various biomedical applications because of favourable local tissue response, higher corrosion resistance and fatigue strength than the stainless steels and cobalt-chromium alloy previously used. The study reported in this paper aims to optimize the conditions of nitrogen ion implantation on commercially pure titanium and to correlate the implantation parameters to the corrosion resistance. X-ray photoelectron spectroscopy was used to analyse surface concentration and the implantation processes. An improvement in the electrochemical behaviour of the passive film was shown to occur with nitrogen ion implantation on titanium, in simulated body fluids. (UK).

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

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Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

International Nuclear Information System (INIS)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical ...

International Nuclear Information System (INIS)

A new procedure of fuel layering for the Fast Ignition Realization Experiment (FIREX) target is proposed. A conical laser guide heating technique was experimentally demonstrated in principle as the followings. It employed the target consisting of a polystyrene (PS) shell, a fill tube and a conical laser guide. At first, liquid fuel was fed into the shell and existed around the conical laser guide because the surface tension of the fuel must cause it. Then, it was solidified. The laser light provided a heat source to the conical laser guide so that the solid fuel was moved to the other interior of the shell. This process resulted in missing solid fuel around the conical laser guide. To fill the vacant space, liquid fuel was added as temperature was raised to the melting point. After the liquid fuel addition, temperature was lowered to the solidification point again. During this ...

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We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation ...

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Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

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A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, ...

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Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of ...

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Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which ...

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Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are ...

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The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here ...

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Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film ...

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of ...

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The changes in the electrical and structural properties of metal-silicide films caused by ion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800/sup 0/C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi/sub 2/, NiSi/sub 2/ and Pd/sub 2/Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10/sup 16/ Ar-ions/cm/sup 2/, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd/sub 2/Si to ...

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Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

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The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720{degree}C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {l_brace}311{r_brace} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged ...

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time ...

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has ...

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Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

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The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

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It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

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For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

International Nuclear Information System (INIS)

A simple method allowing easy calculation of the spatial damage energy distributions for ion-implanted materials is presented. The direct procedure takes account of the variation with depth of the lateral spreading of implanted ions, as well as the effects of energy transport by the recoiling target atoms. The subsequent computer program LUPIN-3D provides three-dimensional damage distributions and allows the construction of damage energy mappings. Various substrates of technological interest are investigated and several fields of application of the calculation are envisaged. The density of cascades can therefore be determined and heterogeneous amorphization models can be implemented. (orig.).

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A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As"+ implanted Si.

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We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.

International Nuclear Information System (INIS)

The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).

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The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

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A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

Science.gov (United States)

of the digital hearing aid technology that led to the cochlear implant. Former. Marshall Space Flight Center engineers. John Richardson and Joseph Howard ...

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As to all sinter variations the microradiographic analysis showed that about 86 to 90 % of the implant surface were enclosed split-free with newly formed bone 16 weeks post operation. A silicate salt addition of the test variation Ap/sub 40/KS/sub 15/ and Ap/sub 40/KS/sub 30/ did not cause a negative influence on bone regeneration. On the surface of all test implants a double layer was revealed radiologically, consisting of a 30 - 40 ..mu..m thick bone near X-ray impermeable area and an X-ray permeable area of maximum 120 ..mu..m thickness directed to the nucleus of the implant.

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The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21/sup 0/C +/- 1/sup 0/C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F/sup +/, Ar/sup +/, or As/sup +/ ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10/sup 18/ to 1 x 10/sup 20/ ions/m/sup 2/. The conductivity of films implanted with As/sup +/ was approximately one order greater than those implanted with Ar/sup +/, which in turn was approximately one-half order greater than those implanted with F/sup +/. The conductivity of the most conductive film approx.1 S/m) was almost 14 orders of ...

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We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

International Nuclear Information System (INIS)

Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion ...

International Nuclear Information System (INIS)

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

For the evaluation of diseases of salivary origin, ultrasound and/or sialography is recommended instead of MRI. In cases of salivary tumor, ultrasound may be helpful in delineating superficial tumors. For small tumors no further imaging is needed. When dealing with a large tumor or a tumor in the deep lobe of the parotid gland, MRI is the preferred imaging method. Not only does MRI provide a large variety of soft tissue signal differences, but also the multiplanar facilities are helpful in delineating the extent of the tumor, whether located in the submandibular, sublingual, or parotid gland. Skull base invasion is often well seen by MRI. Subtle changes may be missed and in those cases CT is recommended to exclude or prove destruction of the skull base. For the evaluation of patients presenting with a recurrent pleomorphic adenoma, MRI is recommended in all patients. MRI delineates the extent and number of recurrent tumors better than palpation ...

International Nuclear Information System (INIS)

For good image quality using ultrasound inverse scattering, one alternately solves the well-posed forward scattering equation for an estimated total field and the ill-posed inverse scattering equation for the desired object property function. In estimating the total field, error or noise contaminates the coefficients of both matrix and data of the inverse scattering equation. Previous work on ill-posed inverse ultrasonic scattering commonly used Tikhonov regularization, which considers error only in the data. The solution so obtained is not precise enough to reconstruct the quantitative internal structure of a large or high-contrast object. This paper adopts the truncated total least squares method, simultaneously considering error and noise on both sides of the inverse scattering equation, and compares it with the classical Tikhonov regularization. We show that it can substantially improve reconstruction fit and image quality when the inverse scattering equation ...

International Nuclear Information System (INIS)

Positron-emission tomography (PET) and PET/CT (computed tomography) are becoming increasingly important for diagnosis and treatment of cancer. Clinically relevant changes can sometimes be seen on PET that are not seen on other imaging modalities. However, PET is not suitable for guiding biopsy as the images are not obtained in real-time. Therefore, our research group has begun developing a concept for PET/CT-guided interventional procedures. This paper presents the rationale for this concept, outlines our research plan, and includes an initial study to evaluate the relative sensitivity of CT and PET/CT in detecting suspicious lesions. (orig.)

International Nuclear Information System (INIS)

The book is a German translation of an American textbook with the original title ''MRI Survival Guide'' and is intended to serve as an introductory guide for beginners or a reference book for quick information. Readers will find information on the fundamentals of the technology and methodology of MRI as well as all details of relevance to practice in a precise and easy-to-grasp arrangement, covering all anatomic areas of interest, illustrations and descriptions of characteristic signs of pathologic processes, high-quality and unusually large-sized diagnostic pictures, a modern didactic concept for quick orientation, including surveys, tables, and reproductions for visualisation of contents. (orig./CB)

Science.gov (United States)

This construction curriculum guide on masonry for secondary students is one of six developed for inservice teachers at Marianas High School in Saipan. The guide provides the rationale, description, goals, and objectives of the program; the program of studies and performance objectives by levels; samples of lesson plans for effective delivery of instruction; and a listing of references. Concepts covered include orientation to masonry construction, safety, tools and equipment, cement, concrete, concrete block masonry, concrete forms, and concrete reinforcement. Appended materials include transparency copies, tests and answer keys, information sheets, and student activities. (CT)

CERN Document Server

Won't get fooled again

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Washington's geothermal potential is discussed. The following topics are covered: exploration, drilling, utilization, legal and institutional setting, and economic factors of direct use projects. (MHR)

Science.gov (United States)

F4.1 . MONOTON. Increasing . FILLVAL ... Interface is easier-to-use and requires a much shorter learning curve than the Internal Interface, ...

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... NVIC 3-94, International Maritime Organization Code for the Safe Carriage of Irradiated Nuclear Fuel, Plutonium and High-Level Radioactive ...

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... Top Ten Things You Need to Know About Global Warming and a note about why there is so ... create your own unit on climate change and global warming."...

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... 2. Federal Employees Retirement System (FERS) ... . 17 ... a. Straight and differential pay b. Bcnefits: retirement, sick leave, health insurance ...

Science.gov (United States)

[[pdf] Reference Guide for Proposals 07/09 [pdf] FY11 Overhead Rate Calculator (xls) DARPA Opportunities NIH Proposals (Leads & Subcontractors) [NIH Office] Related Links MST...

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... s guides and "how-to" videos and other materials, and 7. Receive continuing support from GLOBE's ... and educational materials that result from international proposals in its materials and support ...

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consider applying the requirements of MIL-STD-2073-1. 5.2.5. Sustainability. Because of the design control the. Government has had over. XIL-SPEC designs, ...

UK PubMed Central (United Kingdom)

BackgroundAmino-terminal signal peptides (SPs) are short regions that guide the targeting of secretory proteins to the correct subcellular compartments in the cell. They are cleaved...Full Text Available

International Nuclear Information System (INIS)

Objective: To compare the enhancement pattern of hilar cholangiocarcinoma on contrast-enhanced ultrasound (CEUS) with that on contrast-enhanced computed tomography (CECT). Methods: Thirty-two consecutive patients with pathologically proven hilar cholangiocarcinomas were evaluated by both low mechanical index CEUS and CECT. The enhancement feature of the tumor, portal vein infiltration, and lesion conspicuity on them was investigated. Results: In the arterial phase, the numbers of the lesions showing hyperenhancement, isoenhancement, and hypoenhancement, were 14 (43.8%), 14 (43.8%), and 4 (12.6%), on CEUS, and 12 (37.5%), 9 (28.1%), and 11 (34.4%), on CECT (P = 0.162). In portal phase, the numbers of the lesions showing hypoenhancement, isoenhancement, and hyperenhancement were 30 (93.8%), 1 (3.1%), and 1 (3.1%), on CEUS, and 23 (71.9%), 8 (25.0%), and 1 (3.1%), on CECT (P = 0.046). The detection rates for portal vein infiltration were 84.2% (16/19) for baseline ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by ...

International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

International Nuclear Information System (INIS)

Type 304 stainless steel (SS) specimens sensitised at 873 K and 973 K for 1, 10 and 100 hours respectively were ion implanted using a 150 keV accelerator at an energy of 70 keV in two different doses of nitrogen namely 1 x 10"1"6 to 1 x 10"1"7 ions/cm"2. Ion implantation at 1 x 10"1"6 ions/cm"2 did not show any improvement in pitting resistance, however, the specimens implanted at 1 x 10"1"7 ions/cm"2 showed significant increase in pitting corrosion resistance when potentiodynamic anodic polarisation studies were carried out in acidic chloride medium. For specimens aged at 873 K, nitrogen ion implantation at 1 x 10"1"6 ions/cm"2 increased the intergranular corrosion susceptibility compared to that of unimplanted specimens. However, at the dose of 1 x 10"1"7 ions/cm"2, insignificant IGC attack was noticed. The IGC resistance increased with increase in the dose for all the specimens aged at 973 K, and the ...

International Nuclear Information System (INIS)

We have demonstrated that optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-UV light with photon energies greater than the band gap energy of approx. equal to 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform UV illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of >= 100:1 and spatial resolution of approx. equal to 10 #mu#m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. equal to 100 mJ/cm"2) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. We have recently found from studies of H, He and Ar implanted PLZT that the ...

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

International Nuclear Information System (INIS)

The formation and properties of Pd_2Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd_2Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd_2Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t"1"/"2 kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd_2Di and also surprisingly few defect structures. ...

Energy Technology Data Exchange (ETDEWEB)

We report the results of characterization of nonlinear refractive index of the composite material produced by MeV Ag ion implantation of LiNbO{sub 3} crystal (z-cut). The material after implantation exhibited a linear optical absorption spectrum with the surface plasmon peak near 430 nm attributed to the colloidal silver nanoclusters. Heat treatment of the material at 500 C caused a shift of the absorption peak to 550 nm. The nonlinear refractive index of the sample after heat treatment was measured in the region of the absorption peak with the Z-scan technique using a tunable picosecond laser source (4.5 ps pulse width). The experimental data were compared against the reference sample made of MeV Cu implanted silica with the absorption peak in the same region. The nonlinear index of the Ag implanted LiNbO{sub 3} sample produced at five times less fluence is on average two times greater than that of the ...

International Nuclear Information System (INIS)

There is increasing use of radiofrequency radiation (RFR) in industry for communications, welding, security, radio, medicine, navigation etc. It has been recognised for some years that RFR may interact with cardiac pacemakers and steps have been taken to prevent this interference. It is less well recognised that other metallic implants may also act as antennas in an RFR field and possibly cause adverse health effects by heating local tissues. There are a large and increasing number of implants having metal components which may be found in RFR workers. These implants include artificial joints, rods and plates used in orthopaedics, rings in heart valves, wires in sutures, bionic ears, subcutaneous infusion systems and (external) transdermal drug delivery patches"1. The physician concerned with job placement of such persons requires information on the likelihood of an implant interacting with RFR so as to ...

Science.gov (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

International Nuclear Information System (INIS)

Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.

British Library Electronic Table of Contents (United Kingdom)

Abstract Objectives: The purpose of this study was to evaluate the osseointegration of the dental implants placed into the mandible augmented with different techniques in pigs. Material and methods: Four adult domestic pigs were used. Horizontal augmentation of the mandible was performed in animals by using vascularized femur flap (VFF), non-vascularized femur graft (NVFG) and monocortical mandibular block graft (MG). After 5 months of healing 10 dental implants were placed into each augmented site. The pigs were sacrificed after 3 months of healing. Undecalcified sections were prepared for histomorphometric analysis. Results: Mean bone-implant contact (BIC) values for implants placed into MG, NVFG and VFF were 57.38 11.97%, 76.5 7.88%, 76.53 8.15%, respectively. The BIC values of NVFG and...

International Nuclear Information System (INIS)

The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases ...

Energy Technology Data Exchange (ETDEWEB)

The use of computer vision to detect, measure, and perhaps guide the assembly of man-made components is potentially a very significant research and development area. The efficacy of these techniques for any given application depends on both technical and economic considerations. This paper will explore both these considerations using appropriate generic examples. It is our goal to first present a concise discussion of the present state of many technical and economic factors and then extrapolate these factors into the future for the purpose of guiding further investigations.

International Nuclear Information System (INIS)

Appendix B to 10 CFR Part 50 establishes overall quality assurance requirements for the design, construction and operation of safety-related structures, systems, and components. This guide presents a method acceptable to the Commission for complying with these regulations with regard to overall quality assurance program requirements during design and construction of nuclear power plants. Input to this guide has been provided by the Advisory Committee on Reactor Safeguards.

Science.gov (United States)

Channel plasmon polaritons (CPPs) propagating along the bottom of subwavelength grooves cut into a metal surface were recently shown to exhibit strong confinement combined with low propagation loss, a feature that makes this guiding configuration very promising for the realisation of ultra-compact photonic components. Here, the results of our investigations of CPP guiding by V-grooves cut into gold are presented, demonstrating efficient large-angle bending and splitting of radiation as well as waveguide-ring resonators and Bragg grating filters.

International Nuclear Information System (INIS)

This 2001 edition of the guide to UK renewable companies and equipment and service providers presents summaries of the different industry sectors covering wind power, photovoltaics, solar water heating, geothermal heat pump, hydroelectric power, marine current and wave technology, bioenergy, power generation from landfill gas, energy from waste, and cogeneration. A UK company classification listing and index is provided along with listing of UK organisations and companies and an index of advertisers.

CERN Document Server

Here's the book you need to prepare for Cisco's revised CCNA exam, 640-801. This new edition of the best-selling CCNA Study Guide provides in-depth coverage of every CCNA exam objective, practical information on Cisco internetworking solutions and hundreds of challenging review questions.

Energy Technology Data Exchange (ETDEWEB)

This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users Guide. The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users Guide. The Xyce Parallel Electronic Simulator has been written to support, in a rigorous manner, the simulation needs of the Sandia National Laboratories electrical designers. It is targeted specifically to run on large-scale parallel computing platforms but also runs well on a variety of architectures including single processor workstations. It also aims to support a variety of devices and models specific to Sandia needs. This document is intended to complement the Xyce Users Guide. It contains ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of the study is to investigate the heat transfer augmentation method for a wavy channel type heat exchanger. Experimental studies were carried out, by installation of flow guide-plates with simple structure, to clarify the effects on the augmentation whether the effects are brought by the flow acceleration or by the increase of intensity of turbulence due to the flow seperation, and to determine optimum shape of flow guide-plates. The shape and dimensions of the experimental apparatus are as follows; channel width H of 30 mm, rectangular section with breadth of 300 mm, wavy duct with a bend angle of 60/sup 0/ and straight pipe of 2H length. Air stream was flowed through the duct with Reynolds number of 1.7 x 10/sup 4/ only. As the results, following conclusions were obtained. (1) Wavy duct with large bend angle and without inserting flow guide-plates could not be expected large effects on the heat transfer ...

Energy Technology Data Exchange (ETDEWEB)

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A ...

International Nuclear Information System (INIS)

Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a ...

International Nuclear Information System (INIS)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

The present work is a research of the effect of helium on the microstructure, mechanical properties and fracture behaviors of a type 316 austenitic steel. Helium implantation was performed by 30-MeV #alpha#-particle injection on very small size specimens, using a cyclotron. Average helium content in a He-deposited region was up to 2000 appm He. In the case of 2000appm He implantation, intergranular fracture was sometimes observed on the helium deposited region after tensile test at room temperature. At elevated temperature test, however, this material showed the transition of fracture mode from transgranular-ductile fracture at 773K to intergranular fracture at 873. In the case of 500 appm He implantation, the transition of fracture mode was recognized at a temperature range of 873K to 973K. (author).

British Library Electronic Table of Contents (United Kingdom)

Abstract Objective: To compare the vertical dimensional changes with regard to graft height in a long-term follow-up in patients treated with two different grafting materials used in maxillary sinus floor elevation procedures. Material and methods: Twenty consecutive patients were included. One group was grafted with autogenous bone from the mandible (chin area), and the other group was augmented with a 100%b-tricalcium phosphate (b-TCP). During a 4- to 5-year period, in each patient, at least five panoramic radiographs were made. These panoramic radiographs were used for morphometric measurements, at three different locations. The three locations were the first bone to implant contact at the distal side of the second most posterior implant (L1), halfway between this implant and the most p...

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

British Library Electronic Table of Contents (United Kingdom)

Abstract BACKGROUND: In Brazil, the usual forms of zinc (Zn) supply to coffee plants have limitations that compromise the element availability to the plant. This study proposes to test an alternative approach to supplying the nutrient to Coffea arabica L. using trunk implanted zinc tablets. Additionally, the effect of Zn on the production and quality of coffee beans was also evaluated. RESULTS: The highest total coffee bean production was recorded in plants implanted with Zn tablets (TA), while the lowest was recorded in the control treatment, without zinc supply (WZn), reaching a bianual production of 188.2 and 130.1 60-kg bags of processed beans per hectare, respectively. In the treatments where Zn were applied as tablet implantation or as foliage spraying (SZn); the bean size was larger...

Energy Technology Data Exchange (ETDEWEB)

On 10 dialysis patients we performed 12 balloon dilatations, 2 catheter lyses, 6 stent implants (Palmaz stent) and one atherectomy of central venous stenoses or occlusions (v. subclavia, v. brachiocephalica) at the shunt arm of the patient. The primary success rate was, in balloon PTA and lysis, 12/14 interventions, and in stent placement and atherectomy 7/7. The angiographical and clinical primary result after stent implantation was significantly better than after conventional dilatation. After 66% of the balloon dilatations recidivation occurred within the first year; this can be treated by means of repeated PTA. Whether long-term exclusion of recurrence can be achieved by stent implantation, must be established by means of follow-up studies that are at present in progress. (orig.).

British Library Electronic Table of Contents (United Kingdom)

Abstract Introduction.- Infection is the worst complication seen with inflatable penile prosthesis (IPP). Both the American Medical Systems (AMS) and Coloplast IPP have infection retardant coatings. AMS is coated at the factory with rifampicin and minocycline (InhibiZone). The Coloplast IPP has a hydrophilic coating covalently bonded to its components that will absorb any aqueous solution before implantation and provides increased surface lubricity to decrease bacterial adherence. Aim.- We tested several antibiotic dips comparing zones of inhibition (ZOI) against five commonly infecting bacteria with coated Coloplast implants. Results were compared with those ZOI created with strips of an AMS IPP precoated with InhibiZone. Methods.- Pieces of sterile Coloplast Titan IPP were dipped in (i) ...

Energy Technology Data Exchange (ETDEWEB)

This user's guide describes BNW-III, a computer code developed by the Pacific Northwest Laboratory (PNL) as part of the Dry Cooling Enhancement Program sponsored by the US Department of Energy (DOE). The BNW-III code models a modular dry/wet cooling system for a nuclear or fossil fuel power plant. The purpose of this guide is to give the code user a brief description of what the BNW-III code is and how to use it. It describes the cooling system being modeled and the various models used. A detailed description of code input and code output is also included. The BNW-III code was developed to analyze a specific cooling system layout. However, there is a large degree of freedom in the type of cooling modules that can be selected and in the performance of those modules. The costs of the modules are input to the code, giving the user a great deal of flexibility.

Energy Technology Data Exchange (ETDEWEB)

This guide is intended to provide the necessary guidance to successfully manage the NAVMED Navy Occupational Health Information Management System (NOHIMS) at NAVMED sites and the NAVSEA Occupational Safety and Health Record Keeping System (OSHRKS) at NAVSEA sites. Outlines procedures to manage system operations, procedures to resolve hardware, software and communications problems, and procedures outside the realm of system operations that are required for a successful system. This guide is intended for the System and Functional Managers use. The System Manager is the individual designated to provide overall ADP management to the entire local configuration. Usually responsible for file backup, daily operations of the CPU, security, supplies, equipment, operating software and technical ADP guidance to the local functional users.

International Nuclear Information System (INIS)

Purpose: To flatten temperature distribution of coolant within a core. Constitution: The control device of the present invention is to vary reactivity of a fast breeder to control a reactor power. In general, the control device of this kind comprises a guide pipe arranged within the core and a control rod movable up and down within the guide pipe, and a coolant flows from bottom toward top within the guide pipe. Since a cooling flow rate has a margin, temperature of coolant outlet is extremely low as compared to a fuel assembly, and therefore temperature gradient in the vicinity of the top of the control rod becomes sharp to possibly impart thermal shock to the structural material. In the present invention, the flow passage of coolant is varied to thereby avoid outflow thereof into the core, thus flattening the temperature distribution of the coolant within the core. (Kamimura, M.).

British Library Electronic Table of Contents (United Kingdom)

We show that the HACCP system is not fully applicable at the primary production level, and that food safety is obtained through the careful implementation of good hygiene practice (GHP) at the farm. Guides to GHP intended at primary productions cover one activity, such as cattle rearing or corn production. Yet most farms have more than one activity. Hazards from one activity can be transferred to another activity, and in general this is not considered in one-activity guides. There is a need therefore for farmers to be able to detect and control such transfers. We suggest a horizontal complement to the Guides to GHP that would consider only the application of the Step 6 and Principle 1 of the HACCP system amended as follows: ''List all potential hazards transferred from one activity to anot...

International Nuclear Information System (INIS)

In previous work, on cooling from 300 K to 10 K the elastic moduli for both #alpha#- and #delta#-Pu dropped 30%. This large change may reflect effects of 5f-electron localization. In this work, the elastic moduli at ambient temperature of several Pu-Ga alloys were measured using resonant ultrasound spectroscopy (RUS). The strong temperature dependence of the bulk and shear modulus and the temperature independence of Poisson's ratio was confirmed and the upper temperature limit for #alpha#-Pu was extended to 360 K. Measurements of the time dependence of the shear moduli of Pu and Pu-2.36 at.% Ga were determined with high precision as a function of time and temperature. Using a model for time dependence of point defects, we determined the exponential time constant at ambient temperature for such variations. The low temperature results are consistent with Fluss .

International Nuclear Information System (INIS)

This paper is concerned with the real time automatic discriminating of flaws from two categories; i. cracks (planar defect) and ii. Non-cracks (volumetric defect such as cluster porosity and slag) using pulse-echo ultrasound. The raw ultrasonic flaws signal were collected from a computerized robotic plane scanning system over the whole of each reflector as the primary source of data. The signal is then filtered and the analysis in both time and frequency domain were executed to obtain the selected feature. The real time feature analysis techniques measured the number of peaks, maximum index, pulse duration, rise time and fall time. The obtained features could be used to distinguish between quantitatively classified flaws by using various tools in artificial intelligence such as neural networks. The proposed algorithm and complete system were implemented in a computer software developed using Microsoft Visual BASIC 6.0 (author)

International Nuclear Information System (INIS)

We present two cases of fetal neck masses that were initially diagnosed by ultrasound and further evaluated with prenatal MRI. MRI findings aided in further delineating the neck masses, increasing confidence in the final diagnosis (cervical teratoma and cystic hygroma). With the fetal airway typically filled with fluid that is of high signal on T2-weighted sequences, MRI images in three planes could identify whether the fetal larynx and trachea were partially or completely compressed by the neck tumor. This information was particularly useful in determining if a controlled delivery such as ex utero intrapartum treatment (EXIT) was necessary and aided the surgeons in planning their approach to establishing airway control in the delivery room. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Two cases of focal nodular hyperplasia (FNH), in which ultrasound (US), computed tomography (CT), and magnetic resonance imaging (MR) studies detected an atypical hemorrhagic pattern associated with an intrahepatic arterio venous malformation (AVM) around the growths, are presented. In both cases, histology demonstrated a very early regenerative stage and necrotic-hemorrhagic areas within the lesions. In these cases, the analysis of radiological findings, surgical specimens and histology seemed to confirm the pathogenetic hypothesis suggested by Wanless: in normal liver parenchyma, a ``blood steal`` phenomenon due to congenital or acquired intrahepatic AVM could cause ischemic damage, appearing as a hemorrhagic necrotic area, the extent of which depends on the degree of residual portal supply. (orig.)