Spin-resolved magnetic studies of focused ion beam etched nano-sized magnetic structures
International Nuclear Information System (INIS)
Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic ...
2005-04-01
Energy Technology Data Exchange (ETDEWEB)
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented ...
2005-01-01
International Nuclear Information System (INIS)
The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically ...
2005-01-01
In situ spectroscopic and corrosion studies of ultra-thin gradient plasma polymer layers on zinc
International Nuclear Information System (INIS)
By means of an audio frequency plasma polymerisation ultra-thin gradient plasma polymer layers were deposited on zinc and zinc-coated iron. The aim was to generate an interfacial polymeric layer which bonds to an oxidised metal as well as to a subsequently applied organic coating and acts as an interfacial barrier layer for ions and water. Surface modifications were done in an in situ plasma cell with infrared reflection absorption spectroscopy (IRRAS). The zinc surface was first activated by an oxygen plasma to provide a freshly oxidised and contamination free oxide surface. The intermediate stages of the surface reactions could be revealed. Carbon dioxide molecules as oxidation products adsorbed on the growing zinc oxide and were desorbed at a later stage. An organosilicon plasma polymer was deposited directly on top of the oxide layer from a hexamethyldisilane (HMDS) plasma. ...
2003-07-15
Energy Technology Data Exchange (ETDEWEB)
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage ...
2007-06-04
International Nuclear Information System (INIS)
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage ...
2007-06-04
International Nuclear Information System (INIS)
This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and ...
Energy Technology Data Exchange (ETDEWEB)
This short paper (abstract) describes the characteristics and performances of prototypes of ultra-thin lithium micro-batteries (thickness < 0.2 mm) which can be incorporated into microelectronic circuits. (J.S.)
1996-12-31
Energy Technology Data Exchange (ETDEWEB)
The conductive ultra thin films were fabricated from mixed monolayers containing stearic acid and Head-to-Tail poly(3-alkylthiophene). These films exhibited well-defined layered structures as determined by optical absorption and X-ray diffraction measurements. The UV-Vis absorption spectra of these films showed lower energy absorption shifts of 48 nm from that of the random poly(3-alkylthiophene)/stearic acid LB films. The blue shift of absorption maximum of the LB film is attributed to the increase of {pi}-conjugation length caused by no steric hindrance of alkyl side chains. The conductivity of the Head-to-Tail poly(3-hexylthiophene)/stearic acid LB films was greatly improved in the range of 67-100 S/cm. (orig.)
1997-01-01
XPS/AES Study of Electrical and Chemical Properties of Pd/SiC Interface
Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction at the Pd/SiC ...
1997-11-01
Energy Technology Data Exchange (ETDEWEB)
Surface analytical studies of high nitrogen austenitic stainless steels exposed to deaerated 0.1M HCl have revealed that nitrogen alloying additions influence the composition of salt layers and the passive film/alloy interface. In this study the authors employ electrochemical techniques and variable angle X-ray Photoelectron Spectroscopy (XPS) to examine the passive films formed on a series of austenitic stainless steels, Fe18Cr8Ni, Fe18Cr8Ni0.2N, Fe20Cr20Ni, Fe20Cr20Ni6Mo and Fe20Cr20Ni6Mo0.2N, in acidic chloride aqueous solution. In addition, several other model alloys, Fe19Cr, Fe19Cr9Ni, Fe19Cr2.5Mo, and Fe19Cr9Ni2.5Mo, were examined before and after electrochemical surface nitriding, a technique proven to have an effect analogous to N alloying. It was shown that nitrogen, nickel and molybdenum additions independently and in certain combinations stimulate selective dissolution of iron, resulting in a significant enrichment of chromium beneath the passive film. ...
1995-12-01
International Nuclear Information System (INIS)
Surface analytical studies of high nitrogen austenitic stainless steels exposed to deaerated 0.1M HCl have revealed that nitrogen alloying additions influence the composition of salt layers and the passive film/alloy interface. In this study the authors employ electrochemical techniques and variable angle X-ray Photoelectron Spectroscopy (XPS) to examine the passive films formed on a series of austenitic stainless steels, Fe18Cr8Ni, Fe18Cr8Ni0.2N, Fe20Cr20Ni, Fe20Cr20Ni6Mo and Fe20Cr20Ni6Mo0.2N, in acidic chloride aqueous solution. In addition, several other model alloys, Fe19Cr, Fe19Cr9Ni, Fe19Cr2.5Mo, and Fe19Cr9Ni2.5Mo, were examined before and after electrochemical surface nitriding, a technique proven to have an effect analogous to N alloying. It was shown that nitrogen, nickel and molybdenum additions independently and in certain combinations stimulate selective dissolution of iron, resulting in a significant enrichment of chromium beneath the passive film. ...
1995-03-26
Ultra-thin {sup 242m}Am fuel elements in nuclear reactors
Energy Technology Data Exchange (ETDEWEB)
There is a growing interest in using {sup 242m}Am as a nuclear fuel. The advantages of {sup 242m}Am as a nuclear fuel derive from the fact that {sup 242m}Am has the highest thermal fission cross section. The thermal capture cross section is relatively low and the number of neutrons per thermal fission is high. These nuclear properties make it possible to obtain nuclear criticality with ultra-thin fuel elements. The possibility of having ultra-thin fuel elements enables the use of these fission products directly, without the necessity of converting their energy to heat, as is done in conventional reactors. There are three options of using such highly energetic and highly ionized fission products. - Using the fission products themselves for ionic propulsion. - Using the fission products in an MHD generator, in order to obtain electricity directly. - Using the fission products to heat a gas up to a high temperature for propulsion purposes. In this ...
2000-12-01
Design and fabrication of large ultra-thin PIN detector with membrane stress deviation
Energy Technology Data Exchange (ETDEWEB)
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.
2010-09-15
Reflection of electromagnetic waves by a nonuniform plasma layer covering a metal surface
International Nuclear Information System (INIS)
Reflection coefficients of electromagnetic waves in a nonuniform plasma layer with electrons, positive ions and negative ions, covering a metal surface are investigated by using the finite-difference-time-domain method. It is shown that the reflection coefficients are influenced greatly by the density gradient on the layer edge, layer thickness and electron proportion, i.e., the effect of the negative ions. It is also found that low reflection or high attenuation can be reached by properly choosing high electron proportion, thick plasma layer, and smooth density gradient in the low frequency regime, but sharp density gradient in the high frequency regime. (authors)
2008-07-01
Survey of Biodegradation of Electronic Components and ...
... This pinhole process may be similar to the formation of an oxide layer in aluminum electrolytic capacitors immersed in a borax solution. ...
1991-08-01
Energy Technology Data Exchange (ETDEWEB)
This paper describes high speed rolling and gauge control in cold tandem mill for ultra-thin gauge strip at the Chiba Works of Kawasaki Steel Corporation. To improve the plate-out property of rolling oil, cationic polymeric coagulant was prepared. Rolling oil with cohesion independent of inorganic inclusions or phosphatide was developed, to improve the lubrication for cold rolling, remarkably. In addition, a low-cost Ti-enhanced work roll having high wear resistance and excellent grindability was developed. Rolling can be conducted at the optimal rolling roughness and operation can be performed at the highest rolling speed independent of the rolling treatment amount. Rolling speed at 2800 m/min was confirmed by developing the rolling oil with excellent lubrication and the work roll having high wear resistance. For the improvement of strip thickness accuracy at the steady state rolling, use of the backup roll as roller bearing was more effective rather than the ...
1996-09-01
{sup 242m}Am fueled nuclear battery
Energy Technology Data Exchange (ETDEWEB)
A nuclear battery based on the direct energy conversion of the fission products is presented. Such energy conversion is possible by using a nuclear reactor with ultra-thin fuel elements of 0.2 {mu}m of {sup 242m}Am. The amount of nuclear fuel is 376 g and the dimensions of the battery are 2.4x2.4x2.4 m{sup 3} (including the vacuum spacing), with a BeO moderator and Be electrodes. The total power of the reactor is 10.6 MW and the electrical power is 0.652 MW.
2004-10-01
Ultra-thin {sup 242m}Am fuel elements in nuclear reactors. II
Energy Technology Data Exchange (ETDEWEB)
There is growing interest in using {sup 242m}Am as a nuclear fuel for space reactors and nuclear batteries. In this paper, we discuss different {sup 242m}Am enrichments, as well as fuel weight requirements, to produce a critical reactor. It was found that relatively low enrichments of {sup 242m}Am, about 10 w/o, are enough to guarantee criticality. Such low enrichments might eliminate the need for a {sup 242m}Am enrichment process. It was also found that the best results for low {sup 242m}Am requirements are obtained with a moderator to fuel volume ratio of 10,000.
2004-04-21
Enhancement of Heat and Mass Transfer in Mechanically Contstrained Ultra Thin Films
Energy Technology Data Exchange (ETDEWEB)
Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be ...
2005-01-01
International Nuclear Information System (INIS)
A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.
1988-12-09
ELECTRON MICROSCOPE PREPARATIONS OF RADIOACTIVELY LABELED AEROSOLS
A method is described to smear extremely thin layers of nuclear emulsion on labeled electron microscope preparations and to measure the thicknesses of these layers, Without further separation, preparation and emulsion can be observed after exposure and development in an electron microscope. The source of the tracks formed in the emulsion can be exactly identified and the size and structure determined. This method finds applications in dust research and also in the analysis of medical and biological sections. Further information can be obtained about properties of different emulsions. (auth)
1963-04-01
Collisionless driven reconnection in an open system
Energy Technology Data Exchange (ETDEWEB)
Particle simulation studies of collisionless driven reconnection in an open system are presented. Collisionless reconnection evolves in two steps in accordance with the formation of two current layers, i.e., an ion current layer in the early ion phase and an electron current layer in the late electron phase. After the electron current layer is formed inside the ion current layer, the system relaxes gradually to a steady state when convergent plasma flow is driven by an external electric field with a narrow input window. On the other hand, when the convergent plasma flow is driven from the wide input window, magnetic reconnection takes place in an intermittent manner, due to the frequent formation of magnetic islands in the vicinity of neutral sheet. (author)
2000-06-01
Electron microscopy and X-ray diffraction study of AlN layers
International Nuclear Information System (INIS)
AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)
2001-09-23
Change from polycrystalline to amorphous growth in sputtered CoZr/Cu multilayers
International Nuclear Information System (INIS)
The authors present an investigation of structural changes occurring in bilayer stacks with crystalline columnar growth when one of the layers is substituted by layers known to grow amorphous. In Co/Cu multilayers the Co layers were substituted by CoZr layers of varying Zr content and layer thickness. Structural characterization was performed by transmission electron microscopy (TEM). They show that the amorphization of the CoZr layers leading to a destruction of the columnar growth depends both on the Zr content and on the thickness of the CoZr layers. Additionally a change to textured growth with a normal to the substrate occurs with increasing Zr content. They explain their observations by a simple picture based on the hard sphere model.
1997-04-04
Detection of rotavirus by serological trapping on antibody-coated electron microscope grids.
UK PubMed Central (United Kingdom)
A serological trapping technique for detecting rotaviruses is described which involves coating electron microscope grids with protein A and specific rotavirus antiserum. The presence of a layer of antibodies...Full Text Available
1980-07-01
International Nuclear Information System (INIS)
High quality graphene sheets are synthesized through efficient oxidation process followed by rapid thermal expansion and reduction by H2. The number of graphene layers is controlled by tuning the oxidation degree of GOs. The higher the oxidation degree of GOs is getting, the fewer the numbers of graphene layers can be obtained. The material is characterized by elemental analysis, thermo-gravimetric analysis, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and Fourier transform infrared spectroscopies. The obtained graphene sheets with single, triple and quintuplicate layers as anode materials exhibit a high reversible capacity of 1175, 1007, and 842 mA h g-1, respectively, which show that the graphene sheets with fewer layers have higher reversible capacity. -- Graphical abstract: The typical TEM images of the graphene ...
2011-05-01
OBSERVATION OF NUCLEAR PARTICLE TRACKS IN THE ELECTRON MICROSCOPE
A fine-grained photosensitive layer was prepared for electron- microscopic radioautography. The layer was obtained by evaporating Ag at low pressure and temperature on electron microscope grids and sensitizing the silvered grids with Br/sub 2/. The resulting particles had an average diameter of -- 100 A. The sensitivity of the layer to ionizing radiation was tested by sprinkling the grids with fine uranium aeetate particles and examining the processed grids in an electron microscope. Shont tracks and side spurs were observed which are probably due to alpha radiation from U/sup 235/ and secondary electrons scattered from the silver, respectively. Tests with P/sup 32/- phosphate are also described. (D.L.C.)
1962-08-01
Internal interface for RFC muon trigger electronics at CMS experiment
The paper describes design and practical realization of an internal communication layer referred to as the Internal Interface (II). The system was realized for the RFC Muon Trigger of the CMS experiment. Fully automatic implementation of the communication layer is realized in the FPGA chips and in the control software. The methodology of implementation was presented in the description form of the interface structure from the sides of hardware and software. The examples of the communication layer realizations were given for the RFC Muon Trigger.
2004-01-01
Energy Technology Data Exchange (ETDEWEB)
Ultra-thin, uniform, pinhole-free solid polymer electrolyte films having a fixed carboxylic ester group of approximately 1 {mu}m thickness were prepared by polymerization of methyl acrylate and tris(2-methoxyethoxy)vinylsilane in a glow discharge plasma. The carboxylic ester group of the plasma polymer were transformed to lithium carboxylate groups by treatment with lithium iodide. This process give a single lithium ion conductive film. These solid polymer electrolyte films showed ionic conductivities of the order of 10{sup -8} S cm{sup -1} (10{sup 4} {omega} cm{sup 2} resistance per unit area) at room temperature. (orig.).
1990-08-01
Friction in ultra-thin conjunction of valve seals of pressurised metered dose inhalers
British Library Electronic Table of Contents (United Kingdom)
In many drug dispensing devices, such as syringes and inhalers, an elatomeric gasket is used to prevent the formulation from leaking from the chamber. During device actuation, the seal is subjected to friction, which in turn causes its deformation and can cause unintentional leakage, thus dose variability. Additionally, friction of seal is responsible for a host of potential problems such undue effort required for actuation and potential wear. The mechanism of friction generation in the seal conjunction is complex, arising from adhesion of rubber in contact with the moving interface, viscous action of a thin film of fluid and deformation of seal asperities. Therefore, the first step in understanding the conjunctional behaviour of rubber seals is a fundamental study of mechanisms of frictio...
2010-01-01
Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer
British Library Electronic Table of Contents (United Kingdom)
In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273K for 5h. The samples were then plasma-nitrided for 5h at 803K and 823K, in a gas mixture of 75%N2+25%H2. The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8mm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layer...
2011-01-01
Radiation effect on optical, electrophysical and surface properties of GaAlAs heterostructures
Energy Technology Data Exchange (ETDEWEB)
A study was made on the effect of 3.5 MeV electron irradiation on the properties of light-emissive structure based on GaAlAs. It is shown that a considerable decrease in the emitted light intensity as a result of electron irradiation not accompanied by changes in recombination- and electric properties of the mentioned structures. It is established by the electron-microscopy and Auger-spectroscopy meazurements that electron irradiation causes the occurrence of regions of free aluminium clusters on the external surface of the structure n-layer. The number and the sizes of the regions depend on the electron doze. It was assumed that the mentioned regions can play a role of attenuation filter for the light emitted by the structure.
1984-07-01
British Library Electronic Table of Contents (United Kingdom)
Chitosan (Ch) microspheres have been developed by precipitation method, cross-linked with glutaraldehyde and used as a template for layer-by-layer (LBL) deposition of two natural polyelectrolytes. Using a LBL methodology, Ch microspheres were alternately coated with hyaluronic acid (HA) and Ch under mild conditions. The roughness of the Ch-based crosslinked microspheres was characterized by atomic force microscopy (AFM). Morphological characterization was performed by environmental scanning electron microscopy (ESEM), scanning electron microscopy (SEM) and stereolight microscopy. The swelling behaviour of the microspheres demonstrated that the ones with more bilayers presented the highest water uptake and the uncoated cross-linked Ch microspheres showed the lowest uptake capability. Micros...
2010-01-01
X-ray microanalysis of Al/Zr multilayers in the transmission electron microscope
International Nuclear Information System (INIS)
A one-nanometer scale transmission electron microscope electron probe X-ray microanalysis characterization of as-deposited and annealed aluminum--11.5 at.% zirconium multilayer samples in cross-section synthesized by magnetron sputtering is reported on here. Composition line profiles were acquired across Zr layers in as-deposited material and samples isochronally annealed in a differential scanning calorimeter to temperatures of 290 C and 485 C. A spatial resolution of approximately 1.5 to 2.0 nm was achieved in these experiments and will be improved by deconvolution of the instrumental electron probe function from the data. The as-deposited structure consisted of crystalline Al and Zr layers with thin amorphous layers at the Al/Zr interfaces. The amorphous interface layers increased in thickness upon annealing to 290 C. Additionally, at 290 ...
1997-04-04
Energy Technology Data Exchange (ETDEWEB)
Electronic properties of passive films formed on Fe at various applied potentials in pH 8.5 buffer solution were examined through the photocurrent measurement and impedance spectroscopy. Passive film formed on Fe at relatively low potentials was found to be r-FeOOH layer and internal r-Fe{sub 2}O{sub 3} layer. However, the r-FeOOH layer became unstable and disappeared at potentials below 400mV and hence may be an adsorbed layer. An electronic band structure model for the passive film of Fe was suggested on the basis of the spinel band model with involving two types of electronic excitation processes, i. e., the p-d and the d-d transition together. The effects of applied potential on the photocurrent behaviors of the passive film on Fe were explained appropriately by separating the photocurrent spectra depending on the transition type. The ...
1999-04-01
Fabrication of shuttle-junctions for nanomechanical transfer of electrons
International Nuclear Information System (INIS)
We report on the fabrication of nanomechanical devices for shuttling of electrons from one electrode to another. Each device consists of a 20 nm diameter gold nanoparticle embedded within the gap between two gold electrodes. In two different kinds of shuttle-junctions the nanoparticle is attached to the electrodes through either (i) a single layer of 1,8-octanedithiol or (ii) a multilayer of 1-octanethiol molecules. The thiol layers play the role of 'damped springs', such that when a sufficient voltage bias is applied to the junction, the nanoparticle is expected to start oscillating and thereby transferring electrons from one electrode to the other. For both kinds of shuttle-junctions we observed an abrupt increase in the transmitted current above a threshold voltage, which can be attributed to a transition from the stationary to the oscillating regime. The threshold voltage was found to be lower for ...
2009-12-02
Energy Technology Data Exchange (ETDEWEB)
The electron cyclotron resonance layer in a tokamak, {omega}={omega}{sub c}(r), is not accessible by the extraordinary wave from the low field side, because it is shielded by a cutoff layer. However, a X-mode launched with a nonzero toroidal angle propagates at the cutoff parallel to the magnetic field and has a circular polarization. Therefore it can already at the cutoff layer interact efficiency with electrons via the Doppler shifted resonance. The driven current can be substantially higher than that driven by the second harmonic X-mode. The applicability of this current drive scheme is limited to rather low values of {omega}{sub p}{sup 2}/{omega}{sub c}{sup 2}, but may be of interest for high magnetic field devices. (author)
2000-02-01
Layer-by-layer assembly of thin film oxygen barrier
Energy Technology Data Exchange (ETDEWEB)
Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.
2008-06-02
British Library Electronic Table of Contents (United Kingdom)
The alloying of steel surface with aluminum (Al) using Microsecond-pulsed Intense Electron Beams (MIEB-Al) was developed and optimized in order to be used for improving the corrosion resistance of the 316, 1.4970 and T91 steels, exposed to liquid Pb and Pb-Bi-eutectic. The procedure consists in two steps: (i) coating the steel surface with Al or an Al-containing alloy layer and (ii) melting the coating layer and the steel surface layer using intense pulsed electron beam. In order to cover the steel surface with an homogeneous and crack-free Al-alloyed layer, the following experimental conditions are required: Al coating thickness range 5-10mm, electron kinetic energy 120keV; pulse duration 30ms; energy density 40-45J/cm2; number of pulses 2-3. Using the mentioned procedure, the corrosion r...
2011-01-01
Nanostructure of Si-Ge near-surface layers produced by ion implantation and laser annealing
International Nuclear Information System (INIS)
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)
2001-09-23
Energy Technology Data Exchange (ETDEWEB)
In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the ...
1992-10-01
Observation of strain-enhanced electron-spin polarization in photoemission from InGaAs
International Nuclear Information System (INIS)
Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.
Nanocrystalline and policrystalline phases present in the protective metalloceramic coatings
International Nuclear Information System (INIS)
New data about the structure of high-temperature resistant metalloceramic plasma sprayed coatings in micro and nano areas are presented. Application of the new instrumental methods: transmission electron microscopy combined with selected area electron diffraction mode is possible to obtain these data. The first layer in Ni based metallic bond coat shows nanocrystalline structure. External ceramic layer based on stabilised ZrO_2 is polycrystalline and contains both cubic and tetragonal crystalline phases. Local inhomogeneities in coatings phase composition are determined. (author)
2001-09-23
International Nuclear Information System (INIS)
The changes in microstructure of a specially prepared boron nitride (BN) film as a function of film depth were studied by high resolution transmission electron microscopy (HRTEM) and other materials analysis tools. These changes were then correlated to the changes in processing parameters during film growth. The analyzed film was fabricated by the four-step ion-assisted deposition procedure known to be effective in film-stress engineering for the formation and retention of a thick cubic BN (cBN) layer with a three-step buffer-layer deposition. In this deposition, the energy of the ions assisting cBN formation was increased stepwise from 200 to 280, and then to 360 eV [S.F. Wong, C. W. Ong, G.K.H. Pang, K.Z. Baba-Kishi, W. M. Lau, J. Vac. Sci. Technol. A 22 (2004) 676]. The nominal thickness of the cBN layer was 650 nm and that for each of the three buffer layers was about 160 nm. ...
2005-10-01
Transmission electron microscopy study of plasma nitriding of electroplated chromium coating
Energy Technology Data Exchange (ETDEWEB)
In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 {mu}m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed ...
2003-02-28
Transmission electron microscopy study of plasma nitriding of electroplated chromium coating
International Nuclear Information System (INIS)
In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 #mu#m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed ...
2003-02-28
Energy Technology Data Exchange (ETDEWEB)
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does ...
2008-01-15
International Nuclear Information System (INIS)
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does ...
2008-01-01
Optical and X-ray characterization of ferroelectric strontium-bismuth-tantalate (SBT) thin films
International Nuclear Information System (INIS)
Metal-organic chemical vapor deposition (MOCVD) made layers of strontium-bismuth-tantalate (SBT) were characterized by spectroscopic ellipsometry (SE) using the Adachi model [S. Adachi, Phys. Rev. B 35 (1987) 7454-7463]. The evaluated optical parameters were correlated with the physical and chemical behavior examined by X-ray diffraction (XRD). As a result, it was possible to fit the measured spectra with the Adachi model in a wide range covering the region of the band gap. The Adachi model provides electronic layer parameters like the transition energy E 0 and broadening ?. Our investigations established a correlation between XRD-determined average grain size and the electronic layer parameters.
2006-10-31
UPS fine structures of highest occupied band in vanadyl-phthalocyanine ultrathin film
Energy Technology Data Exchange (ETDEWEB)
Ultraviolet photoelectron spectra were measured for vanadyl phthalocyanine (VOPc) ultrathin films prepared on graphite to study effects of the molecular orientation and the electric dipole layer on the organic electronic states. VOPc has a permanent electric dipole perpendicular to the molecular plane, hence a well-defined electric dipole layer could be intentionally prepared by using the oriented monolayer. The observed binding-energy difference of the highest occupied molecular orbital (HOMO) bands between the oriented monolayer and the double layer was found to agree with the vacuum level shift, leading to a conclusion that the molecular energy level with respect to the substrate Fermi level is changed when the molecule is in the electric dipole layer.
2005-06-15
British Library Electronic Table of Contents (United Kingdom)
This work aims to contribute to the understanding of the influence of the ionospheric layer height (ILH) on the thin layer ionospheric model (TLIM) used to retrieve ionospheric information from the GNSS observations. Particular attention is paid to the errors caused on the estimation of the vertical total electron content (vTEC) and the GNSS satellites and receivers inter-frequency biases (IFB), by the use of an inappropriate ILH. The work relies upon numerical simulations performed with an empirical model of the Earth?s ionosphere: the model is used to create realistic but controlled ionospheric scenarios and the errors are evaluated after recovering those scenarios with the TLIM. The error assessment is performed in the Central and the northern part of the South American continents, a re...
2011-01-01
Observation of dislocation-mediated layer-by-layer interface growth
Energy Technology Data Exchange (ETDEWEB)
The growth of thin Pd[sub 2]Si films on Si(111) surfaces is studied using [ital in] [ital situ] transmission electron microscope under ultrahigh vacuum conditions. No immediate reaction of deposited Pd with Si is observed at room temperature. At [similar to]200 [degree]C, uniform Pd[sub 2]Si films can be formed. The thin Pd[sub 2]Si films are found to grow into strained islands at elevated temperatures. Interfacial misfit dislocations associated with interfacial steps propagate across the strained islands, causing the islands to grow layer-by-layer at the interface. The strain fields associated with the misfit dislocations are believed to be responsible for this behavior.
1994-07-11
Energy Technology Data Exchange (ETDEWEB)
We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy){sub 3}{sup 2+} and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy){sub 3}{sup 2+}-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy){sub 3}{sup 2+} could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.
2008-09-20
International Nuclear Information System (INIS)
We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy)_3"2"+ and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy)_3"2"+-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy)_3"2"+ could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.
2008-09-20
British Library Electronic Table of Contents (United Kingdom)
We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy)32+ and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy)32+-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy)32+ could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.
2008-01-01
Channeling studies of radiation damage in metal-silicides
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.
1978-01-01
Channeling studies of radiation damage in metal-silicides
International Nuclear Information System (INIS)
Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.
Intense luminescence from porous ZnSe layers
International Nuclear Information System (INIS)
We report on the possibility to prepare ZnSe porous layers with different degrees of porosity by means of electrochemical methods. The prepared porous structures were characterized using scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL) techniques. The PL of the as-grown material and porous layers measured at low temperatures (10 K) was found to be dominated by an emission band at 2.796 eV as well as a band at 2.700 eV with several phonon replicas. The analysis of the dependence of these bands upon the excitation power density and temperature suggests that free-to-bound and respectively donor-acceptor electron transitions are responsible for the emission bands involved. The comparison of SEM and CL images taken from the same porous regions demonstrated that cathodoluminescence intensity from layers with small characteristic sizes of the porous ...
International Nuclear Information System (INIS)
The steady state surfaces of ion bombarded 3C-, 4H- and 6H-SiC samples were studied by means of reflected electron energy loss spectroscopy (REELS). The REELS exhibit a well-defined loss peak in the region of about 20 eV. The position of the maximum of the loss peak depends on the bombarding ion energy (decreasing with increasing ion energy), and on the primary electron beam energy (increasing with increasing primary energy). This behavior can be explained if we suppose that the plasmon energy in the altered layer (produced by ion bombardment) is different from that of the unaltered bulk. In this case the measured loss peak is the sum of two overlapping plasmon peaks. With modeling the system as a homogeneous altered layer and a homogeneous unaltered substrate the plasmon energy in the altered layer was derived to be 19.8 eV. The large change of the plasmon energy with respect to ...
2005-12-15
Energy Technology Data Exchange (ETDEWEB)
The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.
2006-02-15
International Nuclear Information System (INIS)
The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.
2006-02-01
The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.
1999-01-01
Energy Technology Data Exchange (ETDEWEB)
The advent of carbon nanotubes, which are graphite layers convoluted in cylinders several nanometers in diameter and several micrometers in length, as well as the experiments on implanting metal atoms in such tubes open the way to producing nanoconductors and other materials with unique properties. For theorists, the basic challenge is interpreting and predicting the structure and properties of these systems. The linearized augmented-plane-wave method (LAPW) is one of the most accurate methods in the theory of the electronic structure of solids. A generalization of this method for quasi-two-dimensional systems, surface electronic states, and layered crystals is known. The LAPW theory for quasi-unidimensional systems, which exhibit translational symmetry in one direction, has been absent thus far. In this paper, the authors suggest a version of such a theory and use this method to calculate the ...
1995-10-01
Energy Technology Data Exchange (ETDEWEB)
The present work describes the surface improvement and biocompatibility of TiAl{sub 24}Nb{sub 10} intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. This improvement in surface properties of the ...
2007-09-30
International Nuclear Information System (INIS)
The present work describes the surface improvement and biocompatibility of TiAl_2_4Nb_1_0 intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. This improvement in surface properties of the intermetallic ...
2007-09-30
Layer-by-layer self-assembly of polyimide precursor/layered double hydroxide ultrathin films
International Nuclear Information System (INIS)
The layer-by-layer (LBL) self-assembly has been extensively used as a simple and effective method for the preparation of polyelectrolyte multilayer films. In this work, we utilized this unique method to prepare polyimide precursor/layered double hydroxide (LDH) ultrathin films. Well-crystallized Co-Al-CO_3 LDH and subsequent anion exchanged Co-Al-NO_3 LDH were prepared and characterized by scanning electron microscopy and X-ray diffraction (XRD). By vigorous shaking of the as-prepared Co-Al-NO_3 LDH, positively charged and exfoliated LDH nanosheets were obtained. Atomic force microscopy and XRD investigations indicated the delamination of LDH nanosheets. The precursor of polyimide, poly(amic acid) tertiary amine salt (PAS) was prepared by the polycondensation of dianhydride and diamine, and subsequent amine salt formation. By using the LBL method, heterogeneous ultrathin films of PAS and LDH were prepared. The formation of ...
2010-09-30
Evaluation of Mechanical Properties and Microstructure in Ion-Irradiated Surface Layer
Target vessel materials used in spallation neutron source will be exposed to proton and neutron irradiation and mercury immersion environments. In order to evaluate the surface degradation of the vessel candidate materials due to such environment, the triple-ion beam irradiation taking the spallation reaction into account and mercury immersion tests were carried out. Mechanical properties of the gradient surface layer were evaluated by the inverse analysis with multi-layer model that considers distribution of surface characteristic was applied to the load and depth curves measured by using the instrumented indentation machine. Transmission electron microscopic observations were performed to evaluate the changes of microstructure in irradiated surface layer using focused ion-beam cut micro-specimen. The mechanical properties distributions in the surface layer were evaluated ...
2005-01-01
Strain enhanced electron spin polarization observed in photoemission from InGaAs
International Nuclear Information System (INIS)
Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements ...
1991-05-06
Energy Technology Data Exchange (ETDEWEB)
A major factor for the achievement of the desirable performance, efficiency and lifetime of flexible organic electronic devices is the optimization of the encapsulation layers that protect the device active layers by atmospheric gas molecule permeation. The active layers consisted of small molecule and/or polymer organic semiconductors as well as the organic conductors need to be encapsulated into a transparent medium that will provide the necessary protection and maintain their charge generation and transport characteristics. The encapsulation layers are generally consisted of inorganic thin films (silicon oxide-SiO{sub x} and aluminium oxide-AlO{sub x}) deposited onto the polymeric substrates, such as PolyEthylene Terephthalate (PET). In this work, in situ and real-time Spectroscopic Ellipsometry in the ultraviolet spectral region has been implemented in order to investigate the ...
2010-01-15
Energy Technology Data Exchange (ETDEWEB)
Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial ...
2004-06-30
International Nuclear Information System (INIS)
Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi_2 layers with the low ...
2004-06-30
Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy
Energy Technology Data Exchange (ETDEWEB)
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger ...
1997-09-01
Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy
International Nuclear Information System (INIS)
Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger ...
1996-09-15
International Nuclear Information System (INIS)
Research highlights: #-># Morphological and chemical characterization at atomic scale of porous alumina layers anodised in ordered regimes. #-># Characterization based on the use of FEG-SEM, STEM-HAADF, STEM-EELS and STEM-X-EDS. #-># Nanoscale distribution of P-, C- and S-bearing species in the pore wall. - Abstract: Ordered porous alumina layers prepared by two-step anodising in phosphoric, oxalic and sulphuric acids have been characterized at sub-nanometer scale using electron microscopy techniques. FEG-SEM and STEM-HAADF images allowed estimating the pore size, cell wall and pore wall thicknesses of the layers. Nanoanalytical characterization has been performed by STEM-EELS and STEM-X-EDS. Detailed features of the spatial distribution of anions in the pore wall of the films have been obtained. Maximum concentration of P-species occurs, approximately, at the middle of the pore wall; adjacent ...
2010-11-01
International Nuclear Information System (INIS)
This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer ...
2009-04-22
Energy Technology Data Exchange (ETDEWEB)
Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.
2004-06-30
International Nuclear Information System (INIS)
Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.
2004-06-30
Hydrolysis kinetics of lead silicate glass in acid solution
International Nuclear Information System (INIS)
Hydrolysis kinetics of the lead silicate glass (LSG) with 40 mol% PbO in 0.5 N HNO_3 aqueous acid solution was investigated. The surface morphology and the gel layer thickness were studied by scanning electron microscopy (SEM) micrographs. Energy dispersive X-ray spectroscopy (EDS) and inductively coupled plasma spectroscopy (ICP) were used to determine the composition of the gel layer and the aqueous solution, respectively. The silicon content of the dissolution products was determined by using weight-loss data and compositions of the gel layer and the solution. The kinetic parameters were determined using the shrinking-core-model (SCM) for rate controlling step. The activation energy obtained for hydrolysis reaction was Q_c_h_e = 56.07 kJ/mole. The diffusion coefficient of the Pb ions from the gel layer was determined by using its concentration in solution and in LSG. The ...
2009-06-01
Energy Technology Data Exchange (ETDEWEB)
Thin passive layers of uranium nitride were formed by nitriding pure metallic uranium in non-equilibrium, low pressure radio-frequency plasma of nitrogen. Plasma nitriding at low substrate temperature of 230 C-250 C was found to cause the formation of adherent layers of uranium sesquinitride ({alpha}-U{sub 2}N{sub 3}) which provide a considerable protection against hydrogen attack. The characteristics of these passivation layers were determined by X-ray diffraction and Auger electron spectroscopy. The incipient hydriding kinetics of the plasma-treated samples were compared with those of untreated and nitrogen-ion implantation ones, utilizing a hot-stage microscope that was monitored continuously with a TV camera and videotape. (orig.)
1996-07-01
Effects of various gas mixtures on plasma nitriding behavior of AISI 5140 steel
International Nuclear Information System (INIS)
AISI 5140 steel was plasma nitrided at various gas mixtures of nitrogen, hydrogen, and argon to investigate the actions of hydrogen and argon on plasma nitriding. The structural and mechanical properties of ion-nitrided AISI 5140 steel have been assessed by evaluating composition of phases, surface hardness, compound layer thickness, and case depth by using X-ray diffraction (XRD), microhardness tests, and scanning electron microscopy (SEM). It was found that the growth of compound layer can be controlled and the diffusion improved when the gas mixture includes H_2 gas. Additionally, it was determined that the amount of Ar in dual gas mixture must be at 20% minimum to obtain distinctive surface hardness and compound layer thickness.
2002-10-01
BOUNDARY LAYER FLOW AND DOUBLE DIFFUSION OVER AN UNSTEADY STRETCHING SURFACE WITH HALL EFFECT
British Library Electronic Table of Contents (United Kingdom)
The present investigation is concerned with the effect of Hall currents on boundary layer flow, and heat and mass transfer of an electrically conducting fluid over an unsteady stretching sheet in the presence of a strong magnetic field. The electron-atom collision frequency is assumed to be relatively high, so that the Hall effect is assumed to exist, while the induced magnetic field is neglected. The governing time-dependent boundary layer equations for momentum, thermal energy, and concentration are reduced using a similarity transformation to a set of coupled ordinary differential equations. The similarity ordinary differential equations are then solved numerically by the successive linearization method together with the Chebyshev pseudo-spectral collocation method. Effects of the Prand...
2011-01-01
Spin-polarized Auger-electron diffraction study of the magnetic poisoning of Fe(001) by sulfur
International Nuclear Information System (INIS)
Spin-polarized angle-resolved sulfur L_2_,_3VV Auger-electron spectra have been recorded for the c(2x2)S/Fe(001) system. The data show the modulation of the sulfur Auger spin polarization as a function of emission angle, which represents an observation of spin-polarized Auger-electron diffraction (SPAED), a potentially powerful tool for the study of local magnetic structure at surfaces, interfaces, and thin films. Theoretical modeling of the SPAED data indicates a large decrease in the magnetization of the top iron layer, suggesting a magnetic poisoning induced by the sulfur overlayer. These findings are independently supported by the observation of a large decrease of secondary electron spin polarization upon sulfur adsorption.
New correlated electron physics from new materials
British Library Electronic Table of Contents (United Kingdom)
Many important advances in the physics of strongly correlated electron systems have been driven by the development of new materials: for instance the filled skutterudites Formula Not Shown ( Formula Not Shown metal, alkaline earth, lanthanide, or actinide; Formula Not Shown , Ru, or Os; Formula Not Shown , As, or Sb), certain lanthanide and actinide intermetallic compounds such as Formula Not Shown and Formula Not Shown ( Formula Not Shown , Rh, or Ir), and layered oxypnictides and related materials. These types of complex multinary d- and f-electron compounds have proven to be a vast reservoir of novel strongly correlated electron ground states and phenomena. In these materials, the occurrence of such a wide range of ground states and phenomena arises from a delicate interplay between com...
2009-01-01
International Nuclear Information System (INIS)
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)
2011-07-01
Microstructural characterization of plasma nitrided austenitic stainless steel
Energy Technology Data Exchange (ETDEWEB)
The microstructure of the layers produced by plasma nitriding austenitic stainless steel at different treatment temperatures (400 and 500 C) were studied by transmission electron microscopy (TEM) together with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the microstructures were composed of 'expanded austenite' ({gamma}{sub N}) and {alpha}(ferrite)+CrN following plasma nitriding at lower and higher treatment temperatures, respectively. The former contains stacking faults and deformed twin substructures, while the latter is made up of colonies displaying a lamellar structure. Kurdjumov-Sachs or Nishiyama-Wassermann orientation relationships between the {alpha} and CrN layer were observed. (orig.)
2000-10-23
High resolution electron microscopy study of as-prepared and annealed tungsten-carbon multilayers
International Nuclear Information System (INIS)
A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500 degrees C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period.As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions.
Extracellular matrix of plant callus tissue visualized by ESEM and SEM
British Library Electronic Table of Contents (United Kingdom)
Actinidia deliciosa endosperm-derived callus culture is stable over a long period of culture. This system was used to investigate the ultrastructure of extracellular matrix occurring in morphogenic tissue. Specimens were prepared by different biological techniques (chemical fixation, liquid nitrogen fixation, glycerol substitution, critical-point drying, lyophilization) and observed by scanning electron microscopy (SEM). Fresh and wet samples were analyzed with the use of environmental scanning electron microscopy (ESEM). Extracellular matrix was observed on the surface of cell clusters as a membranous layer or reticulated network, shrunken or wrinkled, depending on the procedure. Generally, shrunken membranous layers with a globular appearance and fibrils were noted after critical-point d...
2010-01-01
Electron beam induced reactions in metal/Si systems
Energy Technology Data Exchange (ETDEWEB)
Thin Pt, Pd, Pt/sub 2/Si, PtSi, Pd/sub 2/Si, Ni, Mo, W, Nb, Ti, V films deposited on Si single crystal were treated by using electron beam pulses of 60 ns duration in the 0.4-4 J/cm/sup 2/ energy density range. Irradiation of these structures produces at the same time many phases. Post-thermal annealing of the reacted layer induces the formation of a stable phase, the same obtained by only thermal treatment in a conventional furnace. A linear relationship between the energy density range and the lowest eutectic temperature of the compounds formed has been found. Further SEM observations seem to identify a liquid layer from which the phases are forming by subsequent fast cooling.
1982-01-01
Electron beam induced reactions in metal/Si systems
International Nuclear Information System (INIS)
Thin Pt, Pd, Pt_2Si, PtSi, Pd_2Si, Ni, Mo, W, Nb, Ti, V films deposited on Si single crystal were treated by using electron beam pulses of 60 ns duration in the 0.4-4 J/cm"2 energy density range. Irradiation of these structures produces at the same time many phases. Post-thermal annealing of the reacted layer induces the formation of a stable phase, the same obtained by only thermal treatment in a conventional furnace. A linear relationship between the energy density range and the lowest eutectic temperature of the compounds formed has been found. Further SEM observations seem to identify a liquid layer from which the phases are forming by subsequent fast cooling. (author).
Energy Technology Data Exchange (ETDEWEB)
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.) 30 refs.
1998-12-31
International Nuclear Information System (INIS)
The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.)
1997-08-25
International Nuclear Information System (INIS)
In the convolution/superposition method of photon beam dose calculations, inhomogeneities are usually handled by using some form of scaling involving the relative electron densities of the inhomogeneities. In this paper the accuracy of density scaling as applied to primary electrons generated in photon interactions is examined. Monte Carlo calculations are compared with density scaling calculations for air and cork slab inhomogeneities. For individual primary photon kernels as well as for photon interactions restricted to a thin layer, the results can differ significantly, by up to 50%, between the two calculations. However, for realistic photon beams where interactions occur throughout the whole irradiated volume, the discrepancies are much less severe. The discrepancies for the kernel calculation are attributed to the scattering characteristics of the electrons and the consequent oversimplified ...
Study of porous silicon morphologies for electron transport
International Nuclear Information System (INIS)
Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...
1993-05-17
Electron paramagnetic resonance of nitroxide-doped magnetic fluids
Energy Technology Data Exchange (ETDEWEB)
Electron paramagnetic resonance was used to investigate surface-coated magnetite-based magnetic fluids doped with TEMPOL. Two magnetic fluid samples, having magnetite nanoparticles with average diameter of 94 A and coated with different coating layers (lauric acid plus ethoxylated polyalcohol in one case and oleoylsarcosine in the other case), were doped with TEMPOL (6 mM and pH 7.4) and investigated as a function of the nanoparticle concentration. The resonance field and the resonance linewidth both scale linearly with the nanoparticle concentration.
2002-11-01
New correlated electron physics from new materials
International Nuclear Information System (INIS)
Many important advances in the physics of strongly correlated electron systems have been driven by the development of new materials: for instance the filled skutterudites MT4X12 (M=alkali metal, alkaline earth, lanthanide, or actinide; T=Fe, Ru, or Os; X=P, As, or Sb), certain lanthanide and actinide intermetallic compounds such as URu2-xRexSi2 and CeTIn5 (T=Co, Rh, or Ir), and layered oxypnictides and related materials. These types of complex multinary d- and f-electron compounds have proven to be a vast reservoir of novel strongly correlated electron ground states and phenomena. In these materials, the occurrence of such a wide range of ground states and phenomena arises from a delicate interplay between competing interactions that can be tuned by partial or complete substitution of one element for another, as well as the application of pressure, and magnetic fields, resulting in rich and complex ...
2009-10-15
The state of surface layers on lithium in modified non-aqueous media
Energy Technology Data Exchange (ETDEWEB)
The state of lithium electrode surface after contact with triethylamine-modified propylene carbonate solutions of lithium perchlorate was studied using the pulse galvanostatic technique as well as methods of SIMS and electron microscopy. It was shown that amine added into the solutions stabilizes the state of lithium and prevents the formation of a secondary porous passive film on the lithium surface. Chemical composition of the primary film remains unchanged. Certain properties of passive films formed in electrolyte solutions studied were evaluated.
1995-04-01
A multi-megawatt X-band solid state microwave switch
Energy Technology Data Exchange (ETDEWEB)
The authors present design methodology and initial experimental results for a high power microwave switch. The switch is designed for application to the pulse compression system associated with the Next Linear Collider Test Accelerator (NLCTA). The switch is based on the excitation of a plasma layer within a silicon wafer by either a laser or an electron beam. They investigate problems associated with high power operation of such a switch. They explore solutions to the problems of thermal runaway, avalanche breakdown, photo-emission, and secondary emission.
1995-12-31
Epitaxial stabilization of MnO(111) overlayers on a Pd(100) surface
International Nuclear Information System (INIS)
The growth of epitaxial MnO(100) and MnO(111) layers on Pd(100) surface has been investigated by spot-profile analysis low-energy electron diffraction, dynamic atomic force microscopy, photoemission and high-resolution electron energy loss spectroscopy, and density functional theory. We have found that despite the large lattice mismatch to the Pd(100) substrate, the MnO(100) layers are kinetically stabilized at low temperatures (?350 deg. C) and at oxygen pressures between 2x10-7 and 5x10-7 mbar. Annealing in ultrahigh vacuum at 650 deg. C or, alternatively, deposition of manganese metal in oxygen pressure -7 mbar causes the transformation of the MnO(100) to a polar MnO(111) surface, which is decorated by triangular pyramids with (100) side facets. It is suggested that the growth of MnO(111) layers is energetically preferred over MnO(100) due to the epitaxial stabilization at the ...
2007-06-01
Thermoplastic polymer patterning without residual layer by advanced nanoimprinting schemes
Energy Technology Data Exchange (ETDEWEB)
Nanoimprinting is a fast-growing technique for nanoscale patterning. One of the remaining issues in nanoimprinting is the removal of the residual layer after nanoimprinting. Traditionally the residual layer is removed by an oxygen reactive-ion etching (RIE) step. The need for a vacuum environment and dedicated equipment in this step lowers the throughput and increases the cost of the nanoimprinting process. It also prevents the possibility of patterning isolated functional polymers because oxygen RIE destroys the functional materials. In this work, novel nanoimprinting schemes are developed to nondestructively remove the residual layer in thermal nanoimprinting by solvent developing and dewetting. Combined with a transfer-bonding technique, three-dimensional polymer scaffolds are achieved. The techniques developed here eliminate the RIE step in thermal nanoimprinting and are compatible with roller nanoimprinting for ...
2009-06-17
Structural transformations in Sc/Si multilayers irradiated by EUVlasers
Energy Technology Data Exchange (ETDEWEB)
Multilayer mirrors for the extreme ultraviolet (EUV) are keyelements for numerous applications of coherent EUV sources such as newtabletop lasers and free-electron lasers. However the field ofapplications is limited by the radiation and thermal stability of themultilayers. Taking into account the growing power of EUV sources thestability of the optics becomes crucial. To overcome this problem it isnecessary to study the degradation of multilayers and try to increasetheir temporal and thermal stability. In this paper we report the resultsof detailed study of structural changes in Sc/Simultilayers when exposedto intense EUV laser pulses. Various types of surface damage such asmelting, boiling, shockwave creation and ablation were observed asirradiation fluencies increase. Cross-sectional TEM study revealed thatthe layer structure was completely destroyed in the upper part ofmultilayer, but still survived below. The layers ...
2007-08-21
Multilayered Nano-Microcomposite Ti-Al-N/TiN/Al_2O_3 Coatings. Their Structure and Properties
International Nuclear Information System (INIS)
This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/Al_2O_3. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and H_2SO_4 solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: H"3/E"2 etc. were measured. It is demonstrated that the formed ...
2011-07-01
Microstructural observation of focused ion beam modification of Ni silicides/Si thin films
International Nuclear Information System (INIS)
Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the ...
1996-12-02
International Nuclear Information System (INIS)
Samples of 316L stainless steel, Vitalium and Ti6A14V titanium alloy have been implanted with doses of 1.5, 3, and 4.5 x 10"1"7 Si"+/cm"2. Transmission electron microscopy shows that during ion implantation amorphous layers are formed. When samples of titanium alloy were implanted with a dose of 0.5 x 10"1"7 Si"+/cm"2, the implanted layer consisted of a dispersion of fine silicide crystallites instead of being amorphous. The corrosion resistance was analyzed by electrochemical techniques in 0.9% NaCl at the temperature of 37 C. The increase of corrosion resistance has been observed as a result of structural modifications of the surface layer. (author). 7 refs, 4 tabs.
Design and implementation of the BESIII detector-control system
Energy Technology Data Exchange (ETDEWEB)
In the upgrade project of the Beijing Electron-Positron Collider (BEPCII), a novel Detector-Control System (DCS) for the Beijing Spectrometer (BESIII) has been built and started its successful operation for the BESIII Commissioning. The main task of the DCS is to monitor and control the status of the BESIII detector and to guarantee a safe operation of the detector. The DCS must provide a uniform and coherent interface to detector operators even though there are a large number of distributed I/O channels from a large variety of equipments. For this reason, the DCS is hierarchically organized and divided into three layers: front-end layer (FEL), local control layer (LCL) and global control layer (GCL). In the FEL, devices ranging from simple sensors up to complex computer-based devices like embedded systems and programmable logical controllers (PLC) are utilized. A LabVIEW-based ...
2008-07-21
Energy Technology Data Exchange (ETDEWEB)
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled buffer at the interface. Significant relaxation of the film stress ...
1999-09-01
International Nuclear Information System (INIS)
We have fabricated nanometer-spaced electrodes on electron-transparent silicon nitride membranes. A thin Cr/Au layer is evaporated on the backside of the membrane which serves as a gate electrode. Using these devices, we have performed three-terminal electron transport measurements on gold nano-particles at liquid helium temperature. Coulomb Blockade features have been observed and the capacitance to the gate has been extracted. After transport measurements, the Cr/Au back gate is removed and the devices are inspected with a transmission-electron microscope (TEM). TEM inspection reveals the presence of a few nano-particles in the nanogap, which is in agreement with the transport measurements. In addition, the nano-particle size as observed by TEM coincides with the one estimated from the gate capacitance value.
2009-10-14
Energy Technology Data Exchange (ETDEWEB)
The preparation, crystal structure, and the electrical properties of the compound (ET)/sub 3/Ag/sub x/I/sub 8/ where x = approx. 6.4 and ET is bis(ethylenedithio)tetrathiafulvalene, C/sub 10/S/sub 8/H/sub 8/, are described. The compound possesses a truly two-dimensional polymeric anion, one which combines the structural features of both an organic electronic conductor and an inorganic solid electrolyte. The crystal structure consists of alternating anion and cation donor layers. The compound exhibits high electronic conductivity dominated by the electronic contribution, at least near room temperature.
1986-02-12
PIC Simulations Of Ion Acceleration By Linearly And Circularly Polarized Laser Pulses
Linearly polarized laser radiation accelerates electrons to very high velocities and these electron form a sheath layer on the rear side of thin targets where preferentially protons are accelerated. When mass-limited targets are used, the lateral transport of the absorbed laser energy is reduced and the accelerating field is enhanced. For targets consisting of two ion species, heavier ions facilitate formation of quasi-monoenergetic bunch of lighter ions. For circularly polarized light, fast electron production is suppressed by the absence of the oscillatory component of the ponderomotive force. Ions are accelerated on the front side by the separation field and very thin foil can be accelerated as one massive quasi-neutral block. As all ion species acquire the same velocity, this acceleration mechanism is preferred for heavier ions.
2008-06-24
Energy Technology Data Exchange (ETDEWEB)
In this work, we have investigated the capability of different bimetallic nanoparticle alloy combinations to be used in fibre optic temperature sensing based on the technique of surface plasmon resonance (SPR). The metals considered for the present analysis are silver, gold and aluminium. The analysis is derived mainly from the thermo-optic effect along with some fundamental concepts of metal optics such as surface scattering, phonon-electron scattering and electron-electron scattering. The performance of the sensor with three different bimetallic nanoparticle alloy combinations is evaluated and compared, numerically, in terms of its sensitivity and accuracy. On the basis of the comparison and some logistic criterion, we predict the best possible bimetallic alloy combination along with a requisite alloy composition ratio that simultaneously provides higher values of both sensitivity and accuracy which is not possible with any single metallic ...
2009-02-21
International Nuclear Information System (INIS)
Off-axis electron holography is used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope (TEM) using focused ion beam (FIB) milling from the substrate side of the semiconductor device. The measured electrostatic potential is compared with results obtained from TEM specimens prepared using the more conventional 'trench' FIB geometry. The use of carbon coating to remove specimen charging effects, which result in electrostatic fringing fields outside 'trench' specimens, is demonstrated. Such fringing fields are not observed after milling from the substrate side of the device. Analysis of the measured holographic phase images suggests that the electrically inactive layer on the surface of each FIB-milled specimen typically has a thickness of 100 nm.
2005-04-01
Energy Technology Data Exchange (ETDEWEB)
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated ...
2006-08-15
International Nuclear Information System (INIS)
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated ...
2006-08-01
International Nuclear Information System (INIS)
Results of self-consistent local-spin-density-functional calculations are reported for the first time for the Ni(110) surface, represented by one-, three-, and five-layer slabs. Calculations for one- and five-layer slabs of Ni(100) are also reported. The behavior of the surface magnetization with varying slab thickness elucidates the nature and origin of the surface magnetic moment. We predict a 13% enhancement of the Ni(110) surface magnetic moment compared to the bulk value. For the Ni(100) surface, we find a smaller surface enhancement about 7%, compared to bulk, which agrees with the results of Jepsen et al. The enhancement of surface magnetic moments on Ni(100) and Ni(110) surfaces is attributed to s-d dehybridization at the surface and to the presence of electrostatic shifts required to maintain layer-by-layer charge neutrality. We find that the total d-electron charge is the same in each ...
Interface engineering in chalcopyrite thin film solar devices
Energy Technology Data Exchange (ETDEWEB)
Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers ...
2006-06-15
Energy Technology Data Exchange (ETDEWEB)
The structure of hydroxylated oxide films (passive films) formed on Cr(110) in 0.5 M H{sub 2}SO{sub 4} at +0.35, +0.55, and +0.75 V/SHE has been investigated by in situ scanning tunneling microscopy (STM). Cathodic reduction pretreatments at {minus}0.54, {minus}0.64, and {minus}0.74 V/SHE destroy the well-defined topography of the single-crystal electrode and they have been excluded from the passivation procedure. Two different passive film structures have been observed, depending on the potential and time of passivation. At low potential (+0.35 V/SHE), the passive film, consisting mostly of chromium hydroxide, has a noncrystalline and granular structure whose roughness suggests local variations of thickness of ca. {+-} 0.5 nm. A similar structure is observed at higher potential (+0.55 V/SHE), but only for a short polarization time. For longer polarization at 0.55 V/SHE, and at higher potentials (+0.75 V/SHE), a crystalline structure is formed; the higher the potential, the faster the ...
1999-09-16
Energy Technology Data Exchange (ETDEWEB)
Beside traditional applications of refractory metals, e.g. in high temperature furnace construction, lighting or glass industry, one of the most important molybdenum products nowadays are large plates which are frequently used as targets for the sputtering of molybdenum layers in thin-film transistor liquid crystal displays. For the hot rolling of the sintered pre-material, the control over the recovery and recrystallization behavior is of particular importance. Molybdenum tends to a very recovery controlled behavior during hot deformation, at which the dislocations arrange into subcell boundaries instantaneously. These pronounced recovery processes seem to consume a large amount of the stored deformation energy for the actual recrystallization. On the other hand, recovery provides the future recrystallization nuclei. For a comprehensive characterization of these microstructural processes, electron microscopy appears to be the most proper ...
2011-07-15
Energy Technology Data Exchange (ETDEWEB)
The peak flux relationship between hard X-rays and microwaves from solar flares is studied using about 400 events simultaneously recorded with the hard X-ray burst spectrometer on the SMM satellite and the Nobeyama 17 GHz radiometer. The data indicate that the hard X-ray and microwave peak fluxes correlate best for X-ray energies of less than about 80 keV for impulsive flares and greater than about 360 keV for extended flares. By postulating that electrons responsible for microwave emission at 17 GHz are those emitting hard X-rays at these photon energies, it is concluded that: (1) in impulsive flares, microwaves at about 20 GHz are emitted mainly by electrons of less than about 200 keV from a layer through which the electrons stream down into the thick-target hard X-ray source; and (2) in extended flares, microwaves are emitted mainly by MeV electrons trapped in a coronal loop or ...
1988-01-01
In the present work, a new kind of myoglobin (Mb)/Au nanoparticles composite film was fabricated on pyrolytic graphite (PG) electrodes. Oppositely charged chitosan (CS) and silica (SiO(2)) nanoparticles were alternately adsorbed on the PG surface by the electrostatic interaction between them, forming {CS/SiO(2)}(5) layer-by-layer films. Mb and HAuCl(4) in solution were then simultaneously loaded into {CS/SiO(2)}(5) films. The loaded Au(III) in the films were electrochemically reduced into Au nanoparticles, forming nanocomposite films, designated as {CS/SiO(2)}(5)-Mb-Au. Various techniques such as cyclic voltammetry (CV), square wave voltammetry (SWV), quartz crystal microbalance (QCM), electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis were used to characterize the films. Compared with {CS/SiO(2)}(5)-Mb films without Au nanoparticles inside, the {CS/SiO(2)}(5)-Mb-Au films ...
2008-12-01
International Nuclear Information System (INIS)
The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.
2005-11-20
The rapid nitriding of Al alloys with the controlling of plasma power density and pretreatments
Energy Technology Data Exchange (ETDEWEB)
The properties of AlN make this material very attractive for optical, electronic, and tribological application. Also, if the AlN could be formed on the Al surface to enhance its surface properties, Al could be applied for the lightening of machine parts. However, a dense oxide film exists on the surface of Al, which prevents the formation of the Al nitride even during plasma nitriding and plasma coating process. In this study, plasma nitriding has been tried to form an AlN layer on Al after the surface activation processes. During the plasma nitriding, the density of the nitrogen ions was amplified by means of controlling the power of the Al substrates. The film thickness, microstructural features and the mechanical properties such as hardness and wear properties of the AlN layer were examined as a function of the process parameters of pretreatment and plasma nitriding
2010-05-15
Energy Technology Data Exchange (ETDEWEB)
LiNi{sub 0.8}Co{sub 0.2}O{sub 2} particles from high-power lithium-ion cells were examined to determine material changes that result from accelerated aging tests. X-ray absorption spectroscopy (XAS) and transmission electron microscope (TEM) data indicated a Li{sub x}Ni{sub 1-x}O-type layer on the particle surfaces. The greater thickness on particles from high-power fade cells indicate that these surface layers are a significant contributor to cathode impedance rise observed during cell tests.
2002-08-01
Sterically stabilized water based magnetic fluids: Synthesis, structure and properties
Energy Technology Data Exchange (ETDEWEB)
Magnetic fluids (MFs), prepared by chemical co-precipitation followed by double layer steric and electrostatic (combined) stabilization of magnetite nanoparticles dispersed in water, are presented. Several combinations of surfactants with different chain lengths (lauric acid (LA), myristic acid (MA), oleic acid (OA) and dodecyl-benzene-sulphonic acid (DBS)) were used, such as LA+LA, MA+MA, LA+DBS, MA+DBS, OA+DBS, OA+OA and DBS+DBS. Static light scattering, transmission electron microscopy, small angle neutron scattering, magnetic and magneto-rheological measurements revealed that MFs with MA+MA or LA+LA biocompatible double layer covered magnetite nanoparticles are the most stable colloidal systems among the investigated samples, and thus suitable for biomedical applications.
2007-04-15
Spectroscopic investigation of tetracycline interaction with phospholipid Langmuir-Blodgett films
Energy Technology Data Exchange (ETDEWEB)
A widely used veterinary antibiotic, tetracycline (TC), has been incorporated in Langmuir-Blodgett (LB) films of dipalmitoylphosphatidic acid (DPPA) by means of two different procedures: co-transfer and incubation in solution. The resulting structures were characterized by means of contact angle and ellipsometric measurements. The presence of the antibiotic in the phospholipid film was evidenced by means of UV-Vis electronic absorption and infrared vibrational spectroscopy. The two sets of measurements unambiguously indicated the presence of the drug in the LB layer films obtained with both methods, although incubation led to a smaller content of immobilized tetracycline. In both cases, the drug was found to reside in the hydrophilic portion of the layers due to specific interactions of the dimethylamino group of the molecule with the polar head groups of the phospholipid.
2002-12-01
Energy Technology Data Exchange (ETDEWEB)
Samples of austenitic stainless steel AISI 316 were nitrided using the cathodic cage technique with the addition of methane in the nitriding atmosphere. The aim was to study the influence of this technique in reducing the precipitation of chromium nitrite and in improving the wear resistance. The results show that there was a significant improvement in such properties when compared to the results of ionic plasma nitriding. Formation of a double layer, one more internal composed of carbon and another with high nitrogen content, was confirmed by Scanning Electron Microscopy (SEM). The microhardness profile of the layer showed an increase in hardness values and a larger uniformity, while X-ray analysis showed less chromium nitriding precipitation when compared with results obtained for samples treated using ionic plasma nitriding.
2008-07-25
Manufacturing of oxide-dispersion-strengthened steels with the use of preliminary surface oxidation
British Library Electronic Table of Contents (United Kingdom)
Regularities of deformation-induced dissolution of a surface layer of iron oxides in matrixes of iron-based alloys with bcc and fcc lattices have been studied by the methods of M?ssbauer spectroscopy, transmission electron microscopy, and X-ray diffraction. A method of producing iron alloys strengthened by dispersed oxide nanoparticles and alloyed with elements possessing a high affinity to oxygen (titanium and yttrium) has been proposed, which implies a dynamic dissolution of a surface layer of iron oxides upon strong cold deformation and a precipitation of secondary yttrium and titanium nanooxides upon a subsequent high-temperature sintering of mechanically alloyed powders. There has been demonstrated a possibility of oxide strengthening of pure iron upon its interaction with air without...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.
2010-10-15
International Nuclear Information System (INIS)
Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.
2010-10-01
Corrosion and drug release properties of EN-plating/PLGA composite coating on MAO film
British Library Electronic Table of Contents (United Kingdom)
The electroless nickel plating/poly(dl-lactide-co-glycolide) composite coating (EN-plating/PLGA composite coating) was fabricated on the surface of the micro-arc oxidation (MAO) film of the magnesium alloy AZ81 to double control the corrosion and drug release in the hanks' solution. The EN-plating was fabricated on the MAO coating to improve the corrosion resistance by overlaying most pores and micro-cracks on the surface of the MAO film. Meanwhile, a double layered organic poly(dl-lactide-co-glycolide)/paclitaxel (PLGA/PTX) drug releasing coating with a top layered PLGA drug controlled releasing coating on EN plating was prepared to control the drug release rate by adjusting the different lactide: glycolide (LA:GA) ratio of PLGA. Scanning electron microscopy (SEM) and the X-ray powder dif...
2011-01-01
Chemical composition of passive films on AISI 304 stainless steel
Energy Technology Data Exchange (ETDEWEB)
Chemical characterization of passive films formed on AISI 304 austenitic stainless steel, in a borate/boric acid solution at pH 9.2, under various conditions of potential, temperature, and polarizations time, was made by Auger electron spectroscopy combined with ion sputtering, and x-ray photoelectron spectroscopy (XPS). The depth chemical composition, thickness, and duplex character of the passive layers were determined after processing AES sputter profiles by their quantitative approach based on the sequential layer sputtering model. Moreover, separated contributions of elements in their oxidized and unoxidized state could be disclosed from part to part of the oxide-alloy interface. The XPS study specified the chemical bondings which take placed inside the film, between Fe and oxygen (and water).
1994-12-01
Diffusion in silicon isotope heterostructures
The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and ...
2004-05-14
Characterization of structure and mechanical properties of MoSi{sub 2}-SiC nanolayer composites
Energy Technology Data Exchange (ETDEWEB)
A systematic study of structure-mechanical properties relation is reported for MoSi{sub 2}-SiC nanolayer composites. Alternating layers of MoSi{sub 2} and SiC were synthesized by DC magnetron and rf-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: Crystallization and phase transformation of MoSi{sub 2}, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11 GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi{sub 2} to form the C40 structure at 500C and SiC to form the a structure at 700C. The crystallization ...
1993-12-31
Wear properties of steel plasma nitrided at high temperatures
Energy Technology Data Exchange (ETDEWEB)
The wear behaviour of 722M24 (En40B) steel plasma nitrided at high temperatures for long durations was investigated. Under dry sliding and abrasive-containing lubricated conditions, the wear characteristics of the steel were studied as a function of load, time and white layer thickness. The white layer and the wear debris were characterized by X-ray diffraction. The topography of the wear surface was examined in a scanning electron microscope. The plasma nitriding process was carried out using a 20 kW plasma processing unit in cracked ammonia atmosphere. Treatment times of up to 100 h were employed with temperatures of 550, 570 and 590 C. Wear tests were performed with plasma nitrided AMS 6472 as the counterface material. The tests under abrasive-containing lubricated conditions were carried out with 10% carborundum powder 10 [mu]m in size in SAE-30 machine oil. The wear resistance of the steel was improved by plasma ...
1993-08-30
Semiconductor properties and protective role of passive films of iron base alloys
Energy Technology Data Exchange (ETDEWEB)
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide ...
2007-01-15
Semiconductor properties and protective role of passive films of iron base alloys
International Nuclear Information System (INIS)
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide ...
2007-01-01
Pulsed-plasma nitriding of a niobium-alloyed PM tool steel
Energy Technology Data Exchange (ETDEWEB)
The aim of this work is to describe the processes during plasma nitriding of Nb-containing, powder metallurgy prepared (PM) tool steel. PM steel was studied containing 2.5% C, 3.3% Si, 6.2% Cr, 2.2% Mo, 2.6% V, 2.6% Nb and 1.0% W, produced by melt atomization and hot isostatic pressing. The hardened and tempered steel was plasma nitrided at temperatures ranging from 470 to 530 deg. C. The nitriding time was 30-180 min. Optical microscopy, electron microscopy, XRD, EDS, WDS and hardness measurements were used to study the steel's properties, microstructure, phases and chemical composition. The nitriding temperature of 470 deg. C was found to be unsuitable for practical use because the layers prepared at this temperature were non-uniform. The compound layer formed by M{sub 2,3}(C,N) and M{sub 4}N was found after nitriding at temperatures of 500 and 530 deg. C for at least 60 min. The effect of niobium on the ...
2005-02-25
Pulsed-plasma nitriding of a niobium-alloyed PM tool steel
International Nuclear Information System (INIS)
The aim of this work is to describe the processes during plasma nitriding of Nb-containing, powder metallurgy prepared (PM) tool steel. PM steel was studied containing 2.5% C, 3.3% Si, 6.2% Cr, 2.2% Mo, 2.6% V, 2.6% Nb and 1.0% W, produced by melt atomization and hot isostatic pressing. The hardened and tempered steel was plasma nitrided at temperatures ranging from 470 to 530 deg. C. The nitriding time was 30-180 min. Optical microscopy, electron microscopy, XRD, EDS, WDS and hardness measurements were used to study the steel's properties, microstructure, phases and chemical composition. The nitriding temperature of 470 deg. C was found to be unsuitable for practical use because the layers prepared at this temperature were non-uniform. The compound layer formed by M_2_,_3(C,N) and M_4N was found after nitriding at temperatures of 500 and 530 deg. C for at least 60 min. The effect of niobium on the formation of this ...
2005-02-25
Energy Technology Data Exchange (ETDEWEB)
The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native oxide--hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the ...
1987-03-01
Metallic Langmuir and Langmuir-Blodgett films based on TTF derivatives and fatty acid
Energy Technology Data Exchange (ETDEWEB)
Recent progress in the metallic conducting Langmuir-Blodgett (LB) films built from TTF derivative and fatty acids is reported. A simple LB method of transferring the mixed Langmuir (L) film of BEDO-TTF (BO) and stearic acid (SA) onto substrates provided metallic conducting LB films. A homogeneous L film formation on the water surface observed by Brewster angle microscope (BAM) is an essential factor for the well-ordered LB films. In the L film, the carboxylate group of fatty acid forms anion layer bringing about a spontaneous formation of mixed valence state (MVS) of BO layer. Similar spontaneous formation was also found in the molecular combination of nonoxygen-substituted donor of EDT-TTF and octadecanesulfonic acid (OS). This type of reaction would be useful for obtaining conducting LB films. For the LB films of BEDO-TTF and stearic acid, we found a negative transverse magnetoresistance at low temperature that was interpreted in the weak ...
2002-12-01
Hybridization and Modification of the Ni/C{sub 60} Composites
Hybridization and thermal evolution of the Ni+C{sub 60} composites, deposited on Si(001) at room temperature, were studied using Scanning Electron Microscopy, {mu}-Raman spectroscopy and Rutherford Backscattering. As-deposited, the hybrid films exhibited a granular nano-structure with Ni nano-particles encapsulated in C{sub 60} polymerized rinds. The Ni and C (C{sub 60}) distributions in a top layer were found homogeneous with a stable Ni/C (C{sub 60}) ratio; in the larger depth the distributions were inhomogeneous and their ratio dramatically varied. At elevated temperatures, all structural parameters were changed. In the subsurface layer Ni- and C (C{sub 60})-rich zones were formed (due to the induced phase separation), C{sub 60}-molecules decayed and their fragments were transformed into amorphous carbon (a-C). The free volume distribution of the stressed hybrid matter was analyzed by the Hg marker that (in a form of ...
2009-03-10
Enhanced corrosion resistance of Fe_4_0Ni_3_8Mo_4B_1_8 and Nd_1_5Fe_7_7B_8 by laser glazing
International Nuclear Information System (INIS)
Laser glazing, using a KrF excimer laser (> = 248 nm, >a = 22 ns), has been used to improve the corrosion resistance properties of crystallized Fe_4_0Ni_3_8Mo_4B_1_8 (Metglas 2826 MB) and the permanent magnet material Nd_1_5Fe_7_7B_8. The formation of an amorphous layer was confirmed by conversion-electron Mossbauer Spectroscopy (CEMS), and the thickness of the amorphous layer was determined from the attenuation of the x-rays diffracted from the underlying crystalline material. The variation with laser fluence of the amorphous layer thickness on the Metglas were measured. The corrosion properties of the original, crystalline and laser glazed Metglas were measured potentiodynamically in acid electrolyte. Similar voltametric characteristics were obtained for the laser glazed surface and original Metglas, both showing a lower current in the passive region than the crystalline material. Laser glazing ...
1988-09-21
Effects of DC plasma nitriding parameters on microstructure and properties of 304L stainless steel
International Nuclear Information System (INIS)
A wear-resistant nitrided layer was formed on a 304L austenitic stainless steel substrate by DC plasma nitriding. Effects of DC plasma nitriding parameters on the structural phases, micro-hardness and dry-sliding wear behavior of the nitrided layer were investigated by optical microscopy, X-ray diffraction, scanning electron microscopy, micro-hardness testing and ring-on-block wear testing. The results show that the highest surface hardness over a case depth of about 10 #mu#m is obtained after nitriding at 460 deg. C. XRD indicated a single expanded austenite phase and a single CrN nitride phase were formed at 350 deg. C and 480 deg. C, respectively. In addition, the S-phase layers formed on the samples provided the best dry-sliding wear resistance under the ring-on-block contact configuration test.
2009-03-01
Low-energy ion-induced electron emission from gas-covered surfaces
International Nuclear Information System (INIS)
Measurements of ion-induced electron emission have been performed with helium and argon ions with energies between 300 and 900 eV on W, W with 10% Ti, Al, Al with 1% Cu, Al with 1% Si, Si, and Be. This article describes many of the important surface characteristics that influence the ion-induced electron emission. For low-energy ions, the substrate material was found to be less important as the velocity of the incident ion decreased. In the case of incident Ar"+ the substrate material had a negligible effect on the emission for this energy range. The presence of an adsorbed layer enhanced emission in all cases. Heating the substrates resulted in oxidation of the surfaces and a subsequent increase in emission. The electron emission from aluminum samples with smaller grain sizes was higher than samples of identical composition with larger grains. This effect is due to the greater number of adsorption ...
Distributed Grating-Assisted Coupler for Optical All-Dielectric Electron Accelerator
Energy Technology Data Exchange (ETDEWEB)
A Bragg waveguide consisting of multiple dielectric layers with alternating index of refraction becomes an excellent option to form electron accelerating structure powered by high power laser sources. It provides confinement of a synchronous speed-of-light mode with extremely low loss. However, laser field can not be coupled into the structure collinearly with the electron beam. There are three requirements in designing input coupler for a Bragg electron accelerator: side-coupling, selective mode excitation, and high coupling efficiency. We present a side coupling scheme using a distributed grating-assisted coupler to inject the laser power into the waveguide. Side coupling is achieved by a grating with a period on the order of an optical wavelength. The phase matching condition results in resonance coupling thus providing selective mode excitation capability. The coupling efficiency is limited by ...
2005-09-23
Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers
Energy Technology Data Exchange (ETDEWEB)
We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial ...
1996-11-01
Energy Technology Data Exchange (ETDEWEB)
AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, ...
1990-04-09
International Nuclear Information System (INIS)
AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...
Energy Technology Data Exchange (ETDEWEB)
This paper examines the correlation between mechanical properties and the density, phase, and hydrogen content of deposited alumina layers, and compares them to those of sapphire and amorphous alumina synthesized through ion-beam irradiation of sapphire. Alumina films were deposited using electron beam evaporation of aluminum and co-bombardment with O{sub 2}{sup +} ions (30-230 eV) from an electron cyclotron resonance (ECR) plasma. The H content and phase were controlled by varying the deposition temperature and the ion energy. Sapphire was amorphized at 84 K by irradiation with Al and O ions (in stoichiometric ratio) to a defect level of 4 dpa in order to form an amorphous layer 370 nm thick. Nanoindentation was performed to determine the elastic modulus, yield strength and hardness of all materials. Sapphire and amorphized sapphire have a higher density and exhibit superior mechanical properties in ...
1999-07-16
Recent Progress in the Growth of Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition
We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (greater than 650 mW/facet) at 80K and 3.8um. A multi-stage 3.8-3.9um laser structure operated up to T=170K. At 80K, peak power greater than 100mW and a high slope- efficiency were observed in gain guided lasers.
1998-01-01
Monitoring interface traps in operating organic light-emitting diodes using impedance spectroscopy
Energy Technology Data Exchange (ETDEWEB)
Electronic trap densities at the indium tin oxide (ITO)/hole transport layer (HTL) interface in operating organic light-emitting diodes (OLEDs) are characterized in situ using impedance spectroscopy. For OLEDs with a high density of active trap states, negative values of the frequency derivative of resistance are clearly observable for frequencies on the order of 10 kHz, whereas positive values are observed when the trap density is low With this technique, it is revealed that the trap density is minimized via the introduction of a TPD-Si{sub 2} (4,4'-bis[(p-trichlorosilylpropylphenyl) phenylamino]-biphenyl) passivation layer at the ITO/HTL interface or by the application of large electric fields during device operation. Furthermore, impedance spectroscopy illustrates that the ITO/HTL interface is not a simple series resistance when traps are present since they are shown not to contribute to high frequency ...
2007-04-09
Energy Technology Data Exchange (ETDEWEB)
The microstructure of the secondary deformation zone (SDZ) near the cutting surface in metal chips of Ti-6Al-4V formed during machining was investigated using focused ion beam (FIB) specimen preparation and transmission electron microscopy (TEM) imaging. Use of the FIB allowed precise extraction of the specimen across this region to reveal its inhomogeneous microstructure resulting from the non-uniform distribution of strain, strain rate, and temperature generated during the cutting process. Initial imaging from conventional TEM foil preparation revealed microstructures ranging from heavily textured to regions of fine grains. Using FIB preparation, the transverse microstructure could be interpreted as fine grains near the cutting surface which transitioned to coarse grains toward the free surface. At the cutting surface a 10 nm thick recrystallized layer was observed capping a 20 nm thick amorphous layer.
2011-01-01
Fabrication of nanometer structures by means of a fine-focused ion beam
International Nuclear Information System (INIS)
Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer nucleation and growth induced by the ion beam during the metal deposition is given. The layer quality is determined by Auger electron analysis which ...
2000-03-01
Energy Technology Data Exchange (ETDEWEB)
A non-synthetic polymer material, polyterpenol, was fabricated using a dry polymerization process namely RF plasma polymerization from an environmentally friendly monomer and its surface, optical and electrical properties investigated. Polyterpenol films were found to be transparent over the visible wavelength range, with a smooth surface with an average roughness of less than 0.4 nm and hardness of 0.4 GPa. The dielectric constant of 3.4 for polyterpenol was higher than that of the conventional polymer materials used in the organic electronic devices. The non-synthetic polymer material was then implemented as a surface modification of the gate insulator in field effect transistor (OFET) and the properties of the device were examined. In comparison to the similar device without the polymer insulating layer, the polyterpenol based OFET device showed significant improvements. The addition of the polyterpenol interlayer in the OFET shifted the ...
2010-08-31
EB-curing of coatings on wood composite boards
International Nuclear Information System (INIS)
The industrial radiation processing using low energy electron beam (EB) accelerators lower than 300 keV offers high speed, safe technologies for the chemical conversion of thin layer coatings. Because of the nonselective mode of initiating chain reaction polymerization involving free radicals in synthetic coating layers and suitable substrates, the EB curing of the coatings on woods and papers has particular advantage. Hungary decided to start an up-to-date EB line to process cement-bound (CB) wood chipboards with pigmented acrylic coatings. The CB wood chipboards contain more than 60 % of portland cement and up to 40 % of wood particles. They are produced as large boads of 6 - 16 mm thickness. In their fireproof character and other aspects, they are similar to asbestos-cement boards without containing carcinagenic asbestos, and are stable against moisture and atmospheric influences. EB-cured acrylate coating improved ...
1988-10-01
A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of sublayers with bright and dark contrast. The bright contrast sublayers were amorphous ...
2000-05-01
British Library Electronic Table of Contents (United Kingdom)
In this paper, multilayer oxide nanorods were deposited in the nanopores of anodic aluminum oxide (AAO) via solution infiltration followed by heat treatment. The nanorods have a core-shell structure. First, the shell (nanotube) with the thickness of about 40nm was made of TiO"2 through the hydrolysis of (NH"4)"2TiF"6. Second, silver nanoparticles with the diameter of about 3nm were added into the TiO"2 layer through thermal decomposition of AgNO"3 at elevated temperatures. Then, cylindrical cores (nanorods) of CoO and ZnO with 200nm diameter were prepared, respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the structure and composition of the nanorods. UV-vis light absorption measurements in the wavelength range from 350 to...
2011-01-01
International Nuclear Information System (INIS)
The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).
Energy Technology Data Exchange (ETDEWEB)
The deterioration of AA2024, AA6061 and AA7475 anodised in an environmentally-compliant tartaric acid/sulphuric acid electrolyte has been examined as a function of the immersion time in the electrolyte after termination of anodising. By transmission electron microscopy and scanning electron microscopy, degradation of the porous oxide film was qualitatively observed on AA2024. Electrochemical impedance spectroscopy revealed that AA2024 and AA7075 were more sensitive to prolonged immersion in the anodising electrolyte compared with AA6061, due to increased barrier layer thinning rates and increased susceptibility to localized corrosion. Salt spray tests confirmed the previous, indicating decay of anticorrosion performance for AA2024 and AA7075.
2010-07-15
Energy Technology Data Exchange (ETDEWEB)
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
2008-03-15
International Nuclear Information System (INIS)
The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.
2008-03-01
Beryllium coating on JET Inconel tiles
International Nuclear Information System (INIS)
Full text: Institute for Nuclear Research, Pitesti-Mioveni, Romania in direct cooperation with the National Institute for Laser, Plasma and Radiation Physics, Magurele, Bucharest studied and prepared for coating more than 1000 tiles made of Inconel with 7-9 #mu#m of beryllium for nuclear fusion applications at JET, Culham, UK. The principles of manufacturing processes using thermal evaporation and plasma ignited in pure metal vapors as well as by Thermionic Vacuum Arc (TVA) method and the properties of the Ni and Be coatings are presented. The prepared beryllium layers were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. (authors)
2009-10-12
International Nuclear Information System (INIS)
Epitaxial CeO_2 buffer layers were fabricated by pulsed laser deposition (PLD) on r-cut sapphire substrates. An atomically flat CeO_2 surface with a high density of nanodots was formed by a self-assembly process. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy investigation showed that the nanodots were CeO_2 other than impurities. YBa_2Cu_3O_7_-_#delta# (YBCO) thin films were then grown on the annealed and the as-grown CeO_2-buffered sapphires by PLD. The transport measurement results showed that the nanodots enhanced the effective pinning potential and significantly increased critical current density (J _c). Especially, YBCO films with an annealed CeO_2 buffer layer showed a high J _c peak when the applied field was directed along the c-axis of YBCO. Cross-section transmission electron microscopy investigation revealed that the J _c peaks in YBCO with annealed CeO_2 ...
2006-12-05
Separation of the Syncytial Layer of Spargana using Urea
UK PubMed Central (United Kingdom)
The tegument of tapeworms is known to be composed of an outer syncytial cytoplasm layer which includes microtriches and cytoplasmic organelles (= syncytial layer), and a parenchymatous cytoplasm layer...Full Text Available
2009-03-01
Energy Technology Data Exchange (ETDEWEB)
Surface doping of conjugated polymers is realized by depositing a thin layer of graphene oxide (GO) on top of the polymers. The high proton density and the unique 2D structure of GO facilitate the protonic surface doping of conjugated polymers to achieve high conductivities. This finding represents a new strategy for improving charge transport across the metal/conjugated polymer interface to achieve much improved performance in organic solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
2011-04-26
Randomization of heavily damaged regions in annealed low energy Ge{sup +}-implanted (0 0 1)Si
Energy Technology Data Exchange (ETDEWEB)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-15
Randomization of heavily damaged regions in annealed low energy Ge"+-implanted (0 0 1)Si
International Nuclear Information System (INIS)
Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.
2004-01-01
Observation of a surface peak in low energy implant depth profiles in silicon
Energy Technology Data Exchange (ETDEWEB)
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
1984-03-01
Irradiation effects on passive films formed on a 304 Type stainless steel
Energy Technology Data Exchange (ETDEWEB)
The effects of {alpha} particle irradiation on a passive film formed on a 304 type stainless steel are studied in situ. The experimental arrangement minimizes the radiolysis effects due to the electrolyte. Under irradiation, a modification of the electronic structure of the oxide layers is revealed by photo-electrochemistry and impedance measurements. The influence of irradiation on the corrosion resistance of the passive film is investigated. Comparing the rest potential and the breakdown potential respectively under and without irradiation, a drop in the passivity range under irradiation is shown. this is interpreted as a decrease in the corrosion resistance. (author).
1990-01-01
Irradiation effects on passive films formed on a 304 Type stainless steel
International Nuclear Information System (INIS)
The effects of #alpha# particle irradiation on a passive film formed on a 304 type stainless steel are studied in situ. The experimental arrangement minimizes the radiolysis effects due to the electrolyte. Under irradiation, a modification of the electronic structure of the oxide layers is revealed by photo-electrochemistry and impedance measurements. The influence of irradiation on the corrosion resistance of the passive film is investigated. Comparing the rest potential and the breakdown potential respectively under and without irradiation, a drop in the passivity range under irradiation is shown. this is interpreted as a decrease in the corrosion resistance. (author).
1990-01-01
Design of a multi-megawatt x-band solid state microwave switch
Energy Technology Data Exchange (ETDEWEB)
The authors present design methodology for high power microwave switches. Among all possible applications for such a switch they emphasize the design parameters for application to the pulse compression system associated with the Next Linear Collider (NLC). The switch is based on the excitation of a plasma layer within a silicon wafer by either a laser or an electron beam. They investigate problems associated with high power operation of such a switch. Mainly, they explore solutions to the problems of thermal runaway, avalanche breakdown, photo-emission, and secondary emission. Different design methodologies are presented.
1995-07-01
Energy Technology Data Exchange (ETDEWEB)
The electrochemical intercalation of non-solvated lithium in different graphited materials has been performed in LiClO{sub 4}-ethylene carbonate (EC) medium. The irreversible capacity observed during the first output is mainly due to the formation of a passivation layer made of electrolyte reduction products. These products have been characterized for different electrode reduction potentials using transmission electron microscopy (image, diffraction) and electron energy loss spectroscopy (EELS). EC reduction on the electrode surface in presence of LiClO{sub 4} leads to the formation of Li{sub 2}CO{sub 3} for potentials close to 0.8 V vs Li{sup +}/Li. For lower potentials, the electrolyte reduction reaction goes on with the formation of different lithium alkyl-carbonates. In LiClO{sub 4}-propylene carbonate (PC) medium, the interface phenomena are different. The reduction of a graphite electrode is characterized by the ...
1996-12-31
Energy Technology Data Exchange (ETDEWEB)
A high power (200KV), intense current density, low emittance (71mmmrad), high brightness (8x10{sup 10}A/m rad) electron beam was generated in the 10cm long, high-voltage-resistive multi-gap hollow cathode pseudospark chamber filled with 15pa nitrogen and driven by an improved pulse line accelerator. The beam was ejected with the 1mm diameter, the 2.2KA beam current, and the 400ns pulse length, and could propagated 20cm in the drift tube. At a distance of 5cm from the anode it penetrated consecutively an acid-sensitive discoloring film and a 0.05mm-thick copper foil both stuck closely, left 0.6mm and 0.3mm holes on them, respectively. That 10 shots on an acid-sensitive film produced a hole of 1.6mm at 7cm downstream of anode showed its good repeatability. After 60 shots the pseudospark discharge chamber was disassembled and observed that almost no destructive damage traces left on the surfaces of its various electrodes and insulators. But on almost all the surfaces ...
1995-12-31
The kinetics of electrical breakdown of thin (15-70 ?m) layers of polymers and ceramics in a constant-sign field at 77-480 K has been investigated. The temperature dependences of the longevity (breakdown waiting time) of both dielectrics have been found to be similar to each other. At elevated temperatures, the longevity of the dielectrics varies exponentially with increasing temperature, and at reduced temperatures, it is temperature-independent (there is an athermal plateau). The mechanisms of elementary events controlling the process of preparation of the dielectrics for breakdown at elevated and reduced temperatures are the thermal-fluctuation over-barrier electron transition from trap to trap and the tunneling (under-barrier) transition, respectively. The hopping electron transport in the field direction gives rise to critical space charges causing breakdown of the dielectrics. The transition barrier heights (trap ...
2011-07-01
Reduced boron diffusion under interstitial injection in fluorine implanted silicon
International Nuclear Information System (INIS)
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of dislocation loops around the ...
2007-12-01
International Nuclear Information System (INIS)
The ion nitriding treatment is a process widely used in steel alloys to improve the material's properties; such as surface hardness, resistance to wear, fatigue life and resistance to corrosion. But geometric changes in the components can produce during the nitriding process different effects on the behavior of the plasma, such as local variations in the electric field, an empty cathode effect, etc. These in turn can affect among other factors the local temperature and therefore the kinetics of the process, generating variations in the compound layer thicknesses and zone of diffusion, and micro-hardness profile. These heterogeneities limit the effectiveness of the plasma nitriding process, where control and duplication of the surface modification are most important. This work aims to study the effect of the geometry of the pieces treated with ionic nitriding, especially the effect of the orifices. An understanding of the operating mechanisms is sought in order to ...
2006-12-01
New correlated electron physics from new materials
Energy Technology Data Exchange (ETDEWEB)
Many important advances in the physics of strongly correlated electron systems have been driven by the development of new materials: for instance the filled skutterudites MT{sub 4}X{sub 12} (M=alkali metal, alkaline earth, lanthanide, or actinide; T=Fe, Ru, or Os; X=P, As, or Sb), certain lanthanide and actinide intermetallic compounds such as URu{sub 2-x}Re{sub x}Si{sub 2} and CeTIn{sub 5} (T=Co, Rh, or Ir), and layered oxypnictides and related materials. These types of complex multinary d- and f-electron compounds have proven to be a vast reservoir of novel strongly correlated electron ground states and phenomena. In these materials, the occurrence of such a wide range of ground states and phenomena arises from a delicate interplay between competing interactions that can be tuned by partial or complete substitution of one element for another, as well as the application of pressure, and magnetic ...
2009-10-15
Energy Technology Data Exchange (ETDEWEB)
There is presently considerable interest in wear resistant coatings produced using closed field unbalanced magnetron sputtering technology. For example, layered films of diamond-like carbon (DLC) with tungsten or titanium additions have been widely reported. The benefit is that the mechanical properties are enhanced (e.g. giving greater toughness); also it is possible to control the stress state and enhance adhesion. Here we report the further development of this concept by the addition of TiN, TiCN and TiC layers in DLC-based composites, utilizing an additional source of electrons in the vicinity of substrate to enhance ionisation of the plasma and increase coating density. Composite coatings of ceramics TiN, TiC{sub x}N{sub y}, TiC, CrN, TiCrN, TiCrCN, TiCrC, metal doped Ti{sub x%}-DLC and their combinations were deposited on 316 stainless steel substrates. The mass flow of reactive gases into the chamber was controlled ...
1995-08-01
Manganite reduction by Shewanella putrefaciens MR-4
Energy Technology Data Exchange (ETDEWEB)
Previous studies have documented dissimilatory growth of bacteria on solid Mn{sup 4+} oxide, but Mn{sup 3+} oxides have not been previously studied; here the authors have demonstrated for the first time the bacterial reduction of manganite. Strain MR-4 of Shewanella putrefaciens was able to grow on and rapidly reduce insoluble needle-shaped crystals of synthetic manganite (MnOOH), converting them to soluble Mn{sup 2+} in the process. The rate of Mn{sup 3+} reduction was optimal at pH of 7.0 and 26 C consistent with an enzymatic reaction. In addition the rates of reduction were in proportion to the amount of manganite added, but nearly independent of the cell concentration present (e.g., cell number had only a small effect on the rate of Mn{sup 3+} reduction at early stages of growth) suggesting that surface properties were dictating the rates of metal reduction. This thesis was supported by major differences in reduction rates when Mn oxides of different surface areas were studied. ...
1998-11-01
Energy Technology Data Exchange (ETDEWEB)
High voltage cathode materials Li-excess layered oxide compounds Li[Ni{sub x}Li{sub 1/3-2x/3}Mn{sub 2/3-x/3}]O{sub 2} (0 < x < 1/2) are investigated in a joint study combining both computational and experimental methods. The bulk and surface structures of pristine and cycled samples of Li[Ni{sub 1/5}Li{sub 1/5}Mn{sub 3/5}]O{sub 2} are characterized by synchrotron X-Ray diffraction together with aberration corrected Scanning Transmission Electron Microscopy (a-S/TEM). Electron Energy Loss Spectroscopy (EELS) is carried out to investigate the surface changes of the samples before/after electrochemical cycling. Combining first principles computational investigation with our experimental observations, a detailed lithium de-intercalation mechanism is proposed for this family of Li-excess layered oxides. The most striking characteristics in these high voltage high energy density cathode ...
2011-09-06
Study of implantation damage in germanium formed using Ga"+ FIB
International Nuclear Information System (INIS)
Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose of 3x10"1"3 ion/cm"2. High-resolution TEM showed a complex ...
Pathways for the degradation of organic photovoltaic P3HT:PCBM based devices
Energy Technology Data Exchange (ETDEWEB)
We report on studies of device degradation in organic photovoltaic devices based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Since delamination, oxidation, and chemical interactions at the metal electrode/organic interface have long been posited as degradation pathways in organic electronic devices, we first investigated the stability of a variety of electrodes for devices stored in an inert, dark environment. Second, a set of experiments was designed to separate the effects at the metal/organic interface from the degradation of the active layer or the hole extraction interface. To do this, Ca/Al electrodes were deposited to complete half of a substrate's devices, and samples were left both under constant illumination and 10% illumination (10% duty cycle of 1 sun illumination) in a glovebox environment. After more than 200 h of measurement, additional electrodes were deposited and ...
2008-07-15
Effect of mating surface on the high temperature wear of 253 MA alloy
Energy Technology Data Exchange (ETDEWEB)
The wear behaviour of metallic material is influenced by the friction force, which in turn, is governed by the hardness and oxidation kinetics of the mating surface. In view of this, present investigation is undertaken to find the influence of mating surface on the high temperature wear of 253 MA alloy. This alloy is developed for high temperature application. In this work 253 MA alloy is made to slide against two different types of counter face material, namely 100Cr6 steel and PM 1000 alloy, at five different temperatures. 100Cr6 steel gets soften with increase of temperature whereas PM 1000 alloy retains its strength even at high temperature. The friction coefficient and the thickness loss of 253 MA alloy is measured and compared against both variety of mating surfaces as function of temperatures. The morphology of the worn surfaces and the transverse section of the worn surfaces are examined under scanning electron microscope (SEM) to identify the material ...
2004-04-01
International Nuclear Information System (INIS)
After being pre-plated a zinc layer, an amorphous Al-Mn alloy coating was applied onto the surface of AZ31B magnesium alloy with a bath of molten salts. Then the corrosion performance of the coated magnesium alloy was examined in 3.5% NaCl solution by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The results showed that the single Zn layer was active in the test solution with a high corrosion rate while the Al-Mn alloy coating could effectively protect AZ31B magnesium alloy from corrosion in the solution. The high corrosion resistance of Al-Mn alloy coating was ascribed to an intact and stable passive film formed on the coating. The performances of the passive film on Al-Mn alloy were further investigated by Mott-Schottky curve and X-ray photoelectron spectroscopy (XPS) analysis. It was confirmed that the passive film exhibited n-type semiconducting behavior in 3.5% NaCl solution with a carrier density two ...
2009-12-30
Energy Technology Data Exchange (ETDEWEB)
The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using ...
1997-01-01
Tribological behavior of duplex coating improved by ion implantation
Energy Technology Data Exchange (ETDEWEB)
In the present paper the tribological behavior of the coatings are discussed. Duplex coatings were applied on cold working steel 100Cr6. Samples were plasma nitrided at different thickness of plasma surface layers. TiN was deposited with a classic BALZERS PVD equipment and subsequent ion implantation. Ion implantation was provided with N{sup 5+} ions. The other samples were produced with IBAD technology in DANFYSIK chamber. Wear resistance and exchanges of friction coefficient were measured with on-line test using special designed tribology equipment. Following the tests, the wear zone morphology and characteristics of surface layer structure as well as important properties were investigated by scanning electron microscopy (SEM) and X-ray diffraction analysis (XRD). Scratch adhesion testing was performed using commercially available equipment. Energy dispersive X-ray analysis (EDAX) of the wear-scars on pins provided ...
2004-07-01
Surface modification of titanium by radio frequency plasma nitriding
Energy Technology Data Exchange (ETDEWEB)
Radio frequency (RF) plasma nitriding using different input plasma processing powers (250-600 W) improves the surface of titanium by forming hard phases of TiN, Ti{sub 2}N, and Ti (N) into the surface. The characteristics of the compound layer have been investigated by optical microscopy, microhardness measurements, and X-ray diffraction. The effect of plasma power on the sample temperature, electron temperature, and plasma density was studied using Langmuir double probe. The measured surface hardness value of the compound layer is 2190 HV 0.1 for treated sample at plasma power 500 W. The compound thickness continuously increases as the plasma power increases. The highest nitriding rate of 5.88 {mu}m{sup 2}/s was recorded when the input plasma power was adjusted at 550 W. This high nitriding rate of treated titanium samples is ascribed to the high concentration of active nitrogen species in the plasma atmosphere and the ...
2006-02-21
Surface modification of titanium by radio frequency plasma nitriding
International Nuclear Information System (INIS)
Radio frequency (RF) plasma nitriding using different input plasma processing powers (250-600 W) improves the surface of titanium by forming hard phases of TiN, Ti_2N, and Ti (N) into the surface. The characteristics of the compound layer have been investigated by optical microscopy, microhardness measurements, and X-ray diffraction. The effect of plasma power on the sample temperature, electron temperature, and plasma density was studied using Langmuir double probe. The measured surface hardness value of the compound layer is 2190 HV 0.1 for treated sample at plasma power 500 W. The compound thickness continuously increases as the plasma power increases. The highest nitriding rate of 5.88 #mu#m"2/s was recorded when the input plasma power was adjusted at 550 W. This high nitriding rate of treated titanium samples is ascribed to the high concentration of active nitrogen species in the plasma atmosphere and the formed ...
2006-02-21
Energy Technology Data Exchange (ETDEWEB)
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga{sup +} focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the magnetic properties of the patterned ...
2005-04-01
International Nuclear Information System (INIS)
With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga"+ focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the magnetic properties of the patterned ...
2005-04-01
Structural transformations in heat-resistant protective coatings on nickel alloys
Energy Technology Data Exchange (ETDEWEB)
In this work a comprehensive metallophysical study was carried out for two aluminosilicide slip coatings of the systems Al-Si and Al-Nb-Si and an electron-beam Co-Cr-Al-Y coating on alloy EP-539 (17...19% Cr, 4...6% Co, 2.5...4% W, 4.5...6.5% Mo, 2...3% Ti, 3...4% Al, 1.4...2% Nb, balance Ni) after high-temperature testing. The protective properties of the coatings were evaluated from the results of laboratory tests for heat resistance at 1000/sup 0/C in the combustion products of diesel fuel with added sulfur at 970, 1000, and 1060/sup 0/C for 100 h and after full-scale tests for 150, 250, 400, and 700 h. Metallographic, hardness, x-ray, and micro x-ray studies of the coating were carried out. Layer-by-layer phase composition and the lattice spacing of the main phases were determined. X-ray analysis was carried out in an a DRON-1 diffractometer in copper K/sub ..-->../-radiation, and x-ray microanalysis was carried out in a MS-46 Cameca ...
1987-09-01
Single Cooper-pair tunneling junctions using high-{Tc} superconducting materials
Energy Technology Data Exchange (ETDEWEB)
The authors introduce the single electron (Cooper-pair) tunneling junctions using c-axis Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+d} (Bi-2212) superconducting single crystal whiskers. Focused-ion-beam (FIB) etching patterned the Bi-2212 whiskers. The fabricated small stacked junctions have in-plane area S smaller than <1 {micro}m{sup 2}. The junctions showed the current-voltage (I-V) characteristics with the periodic structure of current peaks. The stacking layered structure of Bi-2212 works as multi-junctions array which decrease the effective capacitance, C{sub {Sigma}} = C{sub 0}/N, where C{sub 0} is the capacitance of junction and N is the layer number of elementary junctions. The period of current peaks of I-V curves corresponds to the charging energy of the single Cooper pair, 2Ec (=e{sup 2}/C{sub {Sigma}}).
1999-09-01
Magnetic ordering in CeM_2Si_2 (M = Ag,Au,Pd,Rh) compounds as studied by neutron diffraction
International Nuclear Information System (INIS)
We report the results of neutron-diffraction experiments on CeM_2Si_2 (M = Ag,Au,Pd,Rh) which were performed to explore the role of valence fluctuations and 4f hybridization in the magnetic ordering of cerium compounds. All four order antiferromagnetically, the first three exhibiting structures consisting of ferromagnetic layers with moments perpendicular to the layers, which are believed to be characteristic of 4f-4f interactions mediated through hybridization with conduction electrons. CePd_2Si_2 has an anomalously small moment (0.62#mu#/sub B/) in the ordered state. CeAg_2Si_2 exhibits an incommensurate longitudinal, static magnetization wave with moment and propagation direction along the a axis. The fourth compound, CeRh_2Si_2, has the highest known transition temperature (39 K) reported for cerium ordering; it exhibits another second-order transition at 27 K to a complex commensurate structure with modulated moments. ...
Energy Technology Data Exchange (ETDEWEB)
We report the results of neutron-diffraction experiments on CeM/sub 2/Si/sub 2/ (M = Ag,Au,Pd,Rh) which were performed to explore the role of valence fluctuations and 4f hybridization in the magnetic ordering of cerium compounds. All four order antiferromagnetically, the first three exhibiting structures consisting of ferromagnetic layers with moments perpendicular to the layers, which are believed to be characteristic of 4f-4f interactions mediated through hybridization with conduction electrons. CePd/sub 2/Si/sub 2/ has an anomalously small moment (0.62..mu../sub B/) in the ordered state. CeAg/sub 2/Si/sub 2/ exhibits an incommensurate longitudinal, static magnetization wave with moment and propagation direction along the a axis. The fourth compound, CeRh/sub 2/Si/sub 2/, has the highest known transition temperature (39 K) reported for cerium ordering; it exhibits another second-order transition at 27 K to a complex ...
1984-03-01
Joining of boron carbide using nickel interlayer
International Nuclear Information System (INIS)
Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300degC a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by ...
Energy Technology Data Exchange (ETDEWEB)
In the present paper, the chemical composition of passive films formed on both phases of two types of duplex stainless steels (UNS S31803 and UNS S32304) is determined at the micro-scale using Auger electron spectroscopy (AES). Samples were either mechanically polished (down to diamond pastes) or electrochemically etched in acidic solutions. The micro-electrochemical behavior of samples was then determined in sodium chloride media by means of the electrochemical micro-cell technique (capillary diameters of 30 {mu}m). The results obtained were analyzed considering the passive film chemical composition. Quantitative relationships between electrochemical parameters and the distribution of chromium and iron in the oxide layer were found. Due to differences in mechanical properties between ferrite and austenite, a heterogeneous stress distribution is generated in both phases. A method based on thermal-mechanical simulation was used to quantify ...
2010-09-30
International Nuclear Information System (INIS)
In the present paper, the chemical composition of passive films formed on both phases of two types of duplex stainless steels (UNS S31803 and UNS S32304) is determined at the micro-scale using Auger electron spectroscopy (AES). Samples were either mechanically polished (down to diamond pastes) or electrochemically etched in acidic solutions. The micro-electrochemical behavior of samples was then determined in sodium chloride media by means of the electrochemical micro-cell technique (capillary diameters of 30 ?m). The results obtained were analyzed considering the passive film chemical composition. Quantitative relationships between electrochemical parameters and the distribution of chromium and iron in the oxide layer were found. Due to differences in mechanical properties between ferrite and austenite, a heterogeneous stress distribution is generated in both phases. A method based on thermal-mechanical simulation was used to quantify surface ...
2010-09-30
Flux pinning and critical currents in A-15 superconductors
The relationship between processing, microstructure, and properties was studied for A-15 compounds in multifilamentary composites produced by solid-state diffusion and in thin-film samples produced by vapor deposition. Grain sizes of A-15 superconducting compounds were measured by transmission electron microscopy of multifilamentary composites reacted at various temperatures. Critical current densities at 4.2 K and fields up to 6 T were found to be similar for niobium-tin, vanadium-gallium, and vanadium-silicon of the same grain size. Study of the Cu-V-Si phase diagram led to the production of improved multifilamentary vanadium-silicon conductors. The effects of various alloying elements on A-15 layers produced by solid-state diffusion were studied. The most promising new observation was that tantalum can be incorporated into niobium-tin reaction layers, leading to an enhancement of critical currents at high fields. The ...
1978-02-01
Diffusion research between Ni3Al coating and titanium alloy produced by plasma spraying process
British Library Electronic Table of Contents (United Kingdom)
A Ni3Al coating was prepared by plasma spraying technique on the surface of titanium alloy. Ni-Al mixed powders, coatings and reaction products were investigated by scanning electron microscope, EDS, DSC and XRD. A tight bonding between the coating and the substrate was formed. The X-ray diffraction analysis of the patterns showed that the coating not only had Ni3Al phase, but also had NiO and Al2O3 phase microcontent. Comparing Ni coated Al to Ni3Al at 900^oC, the diffusion was stronger and the diffusion layer was thicker. A minute pore structure was formed at 1200^oC in the front edge of solid-state reaction layer. So Ni3Al restrained the solid-state reaction of the coating with the substrate, and as a whole weakened the entry of oxygen atoms into the substrate and quenched the out-diffu...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
The major objective of this work is to seek for new solutions that can lead to significant lifetime improvement of submerse lines which experience severe wear processes on the polymeric layer coating used for protection of the touch down point (TDP) region. Four different materials were selected as possible candidates for the coating layer of this critical region. They are commercially available and posses well known processing technologies. The materials are two polymers: nylon 66 and polyacetal; and two composites: nylon 66 reinforced with 13 or 33% glass fiber. Stress-strain behavior was evaluated using two deformation rates in order to characterize the viscoelastic behavior proper of polymeric materials. It was observed that increasing the amount of glass fiber in the matrix leads to a stronger material and a consequent decrease of elongation to break. Additionally, abrasion tests were carried out using a Taber equipment in three distinct ...
2003-07-01
International Nuclear Information System (INIS)
The adherent magnetite film thickness, corrosion rate and the loose crud on the surface of carbon steel and other structural materials were evaluated by inserting the coupons in the two autoclaves connected to the two ends of the PHT systems of Indian PHWRs. This paper includes an analysis of the results obtained during the hot conditioning of TAPP-3 and 4, Kaiga-3 and 4, and RAPP-5. The system temperatures of 230 deg C to 260 deg C and the adherent magnetic thickness of 0.30 ?m to 0.75 ?m on the internal surface of carbon steel were achieved during the hot conditioning of these reactors. The time duration of termination of the hot conditioning ranged from 48 to 71 hours. The maximum magnetite film thickness of 0.75 ?m in 71 hours and temperature 260 deg C and a minimum thickness of 0.30 nm in 48 hours at 230 deg C were achieved during hot conditionings. The XRD analyses of hot conditioned carbon steel coupons showed that oxide film constitutes only magnetite. Optical microscopic ...
2008-12-01
International Nuclear Information System (INIS)
In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O_2 and CO, a typical ...
2008-07-31
International Nuclear Information System (INIS)
The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)
Energy Technology Data Exchange (ETDEWEB)
A composite film consisting of the mixed-addenda Keggin-type polyoxometalate alpha-K{sub 3}PMo{sub 3}W{sub 9}O{sub 40} (PMo{sub 3}W{sub 9}) and silver nanoparticles (AgNPs) was fabricated on quartz, silicon, and ITO by the layer-by-layer self-assembly method. The regular growth of the multilayer film was monitored by UV-vis spectroscopy, and the morphology was measured by atomic force microscopy (AFM). The multilayer film embedded by AgNPs exhibited the photo-luminescence ascribed to electronic transitions from excited states to d levels of the silver nanoparticles. The composite film also showed electrocatalytic activity towards reduction of NO{sub 2}{sup -}, H{sub 2}O{sub 2}, ClO{sub 3}{sup -}, BrO{sub 3}{sup -}, and IO{sub 3}{sup -} attributed to tungsten-centered and molybdenum-centered redox processes of PMo{sub 3}W{sub 9}.
2009-12-01
Energy Technology Data Exchange (ETDEWEB)
We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth ...
1989-05-01
For understanding on basic radiation mechanism of the high-gain FEL based on SASE, the author presents electron-crystal interpretation of FEL radiation. In the electron-crystal, electrons are localized at regularly spaced multi-layers, which represents micro-bunching, whose spacing is equal to the radiation wavelength, and the multi-layers are perpendicular to beam axis, thus, diffracted wave creates Bragg's spots in forward and backward directions. Due to the Doppler's effect, frequency of the back-scattered wave is up-converted, generates forwardly focused X-ray. The Bragg's effect contributes focusing the X-ray beam into a spot, thus peak power becomes extremely higher by factor of typically 107. This is the FEL radiation. As well known, the total numbers of scattered photons in Bragg's spots is equal to the total elastic scattering photons ...
2007-01-19
International Nuclear Information System (INIS)
Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg. C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 deg. C. The surface of Au and Ti/Au contacts annealed at 900 deg. C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact ...
2006-11-15
Electronic properties of doped CuPc layers
Energy Technology Data Exchange (ETDEWEB)
Doping of molecular organic materials is important for the functionality of organic electronic devices as e.g solar cells. We investigated the doping behaviour of the acceptor molecules Cl{sub 2}-DCNQI and F{sub 16}CuPc incorporated into a CuPc matrix. In-situ XPS/UPS measurements were performed on coevaporated films. Doping by Cl{sub 2}-DCNQI was not successful. The molecule lost its chlorine atoms during thermal evaporation. For pristine F{sub 16}CuPc layers we observe a strong broadening of the photoemission features with increasing deposition rate indicating different domains probably of different molecular structure of differing electric interface potential. F{sub 16}CuPc incorporated into CuPc shows sharp photoemission features. With increasing F{sub 16}CuPc content Fermi level shifts are observed in both phases. In CuPc the maximum shift is about 0.45 eV towards the HOMO level indicating p-doping. Simultaneously the Fermi level in F{sub ...
2009-07-01
International Nuclear Information System (INIS)
Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation and further annealing on composition, ...
Properties and performance of new metastable Ti-B-C-N hard coatings prepared by magnetron sputtering
Energy Technology Data Exchange (ETDEWEB)
Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various TiC-TiB{sub 2} targets in Ar+N{sub 2} ...
1995-10-01
Transuranic separation using organophophorus extractants adsorbed onto superparamagnetic carriers.
Energy Technology Data Exchange (ETDEWEB)
Polymeric coated ferromagnetic carriers with an absorbed layer of octyl(phenyl)-N,N-diisobutylcarbamoylmethylphosphine oxide (CMPO) diluted by tributyl phosphate (TBP) are being evaluated for application in the separation and the recovery of low concentrations of americium, plutonium, and uranium from nuclear waste solutions. Due to their chemical nature, these extractants selectively complex americium and plutonium contaminants onto the particles and the complexed particles can be recovered from the solution using a magnet. Physical and chemical characterization of the extractant-absorbed particles were performed by gamma and liquid scintillation counting, scanning electron microscopic (SEM) micrograph, and other physical measurements. Plutonium, americium, and uranium separations have been performed at various HNO{sub 3} and HCl concentrations. Parameters were studied to determine the limitations and capacity of the process. The status of the ...
1998-10-07
Thermal loads on tokamak plasma-facing components during normal operation and disruptions
Energy Technology Data Exchange (ETDEWEB)
Power loadings experienced by tokamak plasma-facing components during normal operation and during off-normal events are discussed. A model for power and particle flow in the tokamak boundary layer is presented and model predictions are compared to infrared measurements of component heating. The inclusion of the full three-dimensional geometry of the components and of the magnetic flux surface is very important in the modeling. Experimental measurements show that misalignment of component armour tile surfaces by only a millimeter can lead to significant localized heating. An application to the design of plasma-facing components for future machines is presented. Finally, thermal loads expected during tokamak disruptions are discussed. The primary problems are surface melting and vaporization due to localized intense heating during the disruption thermal quench and volumetric heating of the component armour and structure due to localised impact of runaway ...
1990-01-01
The CDF II eXtremely Fast Tracker Upgrade
International Nuclear Information System (INIS)
The CDF II eXtremely Fast Tracker (XFT) is the trigger processor which reconstructs charged particle tracks in the CDF II central outer tracking chamber. The XFT tracks are also extrapolated to the electromagnetic calorimeter and muon chambers and are associated to electromagnetic clusters and muon stubs to generate trigger electron and muon candidates. The steady increase of the Tevatron instantaneous luminosity and the resulting higher occupancy of the chamber demanded an upgrade of the original system, which performed tracking only in the transverse plane of the chamber and was consequently affected by a significant level of fake tracks. In the upgraded XFT, tracking is reinforced by using additional data from the stereo layers of the chamber to reduce the level of fake tracks and to perform three-dimensional track reconstruction. A review of this upgrade is presented.
2007-10-21
British Library Electronic Table of Contents (United Kingdom)
The corrosion behavior of hard metals with VC and Cr3C2 grain growth inhibitors was investigated in alkaline solutions by electrochemical methods. The two inhibitors have opposite effects on the corrosion behavior: Cr3C2 significantly improves the corrosion behavior, whereas VC-containing alloys show a poor resistance. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and analytical transmission electron microscopy (TEM) analyses of the distributions of Cr and V in the composite material, as well as in the surface layers formed during corrosion were employed to clarify the influence of these elements on the corrosion behavior. The measurements showed that VC is precipitated mostly along the WC/binder interface after the liquid-phase sintering process, while Cr3C2 is almost homogene...
2011-01-01
Synthesis and characterization of Fe3O4Gg nanocomposites and their antibacterial performance
British Library Electronic Table of Contents (United Kingdom)
We synthesized Fe3O4Gg nanocomposites through a combination of solvothermal, hydrothermal, and chemical redox reactions. Characterization of the resulting samples by X-ray diffraction, Fourier-transform infrared spectroscopy, field-emission scanning and transmission electron microscopy, and magnetic measurement is reported. Compared to Fe3O4g nanocomposites, the Fe3O4Gg nanocomposites showed enhanced antibacterial activity. The Fe3O4Gg nanocomposites were able to almost entirely prevent growth of Escherichia coli when the concentration of Ag nanoparticles was 10mg/mL. Antibacterial activity of the Fe3O4Gg nanocomposites was maintained for more than 40h at 37^oC. The intermediate carbon layer not only protects magnetic core, but also improves the dispersion and antibacterial activity of the...
2011-01-01
Surface energy of semiconductors covered with thin layers of various materials
International Nuclear Information System (INIS)
Surface energy of III-V semiconductors ended by (110) clean surface and surface covered by atomic monolayer of aluminium, copper and sulfur has been calculated. We have used the Greens-function technique based on the scheme of linear muffin-tin orbitals in the atomic sphere approximation (LMTO-ASA) for the crystal potential and width the local density approximation (LDA) for electrons. Two types of coverage are considered: full monolayer with two additional atoms per two-dimensional unit cell and half monolayer with one additional atom per unit cell. Full monolayer of metallic atoms increases the surface energy. Cu atoms lead to greater destabilization than Al atoms. Sulfur atoms stabilize (110) surface for all considered compounds. (author)
1997-09-23
Study on the solid state reaction between bilayered Pd/Au films and silicon substrates
British Library Electronic Table of Contents (United Kingdom)
Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...
2006-01-01
Study on development of multi-composite ceramics
Energy Technology Data Exchange (ETDEWEB)
Creation of new multi-composite materials is an essential issue to attain an innovative improvement of the current nuclear technology. In this paper, some highlights are focused on the research of creation of those materials and the relating subjects in NIRIM. (1) The KOH corrosion test method are expected to be efficiently available in the limited cases instead of Na corrosion test one. (2) The preliminary creation of the multi-composite ceramics were achieved by Y- ion implantation into sapphire and the RF sputtering, of which the specified orientation was realized by the existence of the buffer layer. The importance of the defect control are described with the relation to the corrosion resistance improvement. (3) The ion beam induced phenomena have been investigated on the surface change of silica glass and the crystallization of Cu film on SrTiO{sub 3}. (4) The electronic states of the alkali-metal adsorbed surfaces and that of the ...
1996-03-01
Simple chemical method for nanoporous network of In2S3 platelets for buffer layer in CIS solar cells
British Library Electronic Table of Contents (United Kingdom)
Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...
2008-01-01
Energy Technology Data Exchange (ETDEWEB)
A number of different theoretical approaches have been used to model to atomic structure and properties of solid-liquid interfaces. Most calculations indicate that ordering occurs in the first several layers of the liquid, adjacent to the crystal surface. In contrast to the numerous theoretical investigations, there have been no direct experimental observations of the atomic structure of a solid-liquid interface for comparison. Saka et al. examined solid-liquid interfaces in In and In-Sb at lattice-fringe resolution in the TEM, but their data do not reveal information about the atomic structure of the liquid phase. The purpose of this study is to determine the atomic structure of a solid-liquid interface using a highly viscous supercooled liquid, i.e., a crystal-amorphous interface.
1996-12-31
Preparation and Characterization of a Novel Polyamide Charged Mosaic Membrane
British Library Electronic Table of Contents (United Kingdom)
A novel composite charged mosaic membrane (CCMM) was prepared via interfacial polymerization (IP) of polyamine [poly(epichlorohydrin amine)] and trimesoyl chloride (TMC) on the polyethersulfone (PES) support. Fourier transform infrared spectroscopy (FT-IR), environmental scanning electron microscopy (ESEM), atomic force microscopy (AFM) and water contact angle analysis were applied to characterize the resulted CCMM. The FT-IR spectrum indicates that TMC reacts sufficiently with polyamine. ESEM and AFM pictures show that the IP process produces a dense selective layer on the support membrane. The water contact angle of the CCMM is smaller than that of the substrate membrane because of the cross-linked hydrophilic polyamine network. Several factors affecting the IP reaction and the performan...
2010-01-01
British Library Electronic Table of Contents (United Kingdom)
To investigate the variation in the fine structure of polyamide thin-film composite (TFC) membranes prepared via two different interfacial polymerization conditions (IP-I and IP-II), experiments on Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), water contact angle, and positron annihilation spectroscopy (PAS) coupled to a slow positron beam were conducted. Polyamide TFC membranes were prepared via the interfacial polymerization reaction between triethylenetetramine (TETA) and trimesoyl chloride (TMC) on the surface of a modified polyacrylonitrile (mPAN) membrane. Compared with the polyamide TFC membrane prepared via IP-I, the polyamide layer prepared via IP-II showed a shorter S plateau length (thinner thickness), a higher o-Ps intensity I3 value (higher free-volume con...
2010-01-01
Plasma nitriding of microalloyed steel
Energy Technology Data Exchange (ETDEWEB)
Microalloyed or high strength low alloy (HSLA) steels are carbon-manganese steels containing small amounts of Nb, V or Ti. The excellent mechanical properties of these alloys, particularly high yield strength, usually obviate the need for expensive quench and tempering operations. Furthermore, the presence of a significant amount of nitride-forming elements in some microalloyed steels has generated interest in the applicability of these alloys as a new generation of nitriding steels. In this paper, a study of the plasma nitriding behaviour of a commercially available microalloyed steel MAXIMA{sup TM} is reported. A comparison is made with a traditional quenched and tempered nitriding steel (En19), plasma nitrided under similar conditions. Optical and scanning electron microscopy in conjunction with microhardness measurements and X-ray diffraction were utilized to characterize the nitrided surfaces. The observed differences in the thickness and structure of the ...
1995-03-01
International Nuclear Information System (INIS)
Early failure of an induction-hardening carbon steel pipe, which was used to transport tailing slurry, was caused by pitting corrosion. The microstructure on the internal pipe surface layer was found being a mixture of martensite, pearlite and ferrite. In this work, the pitting corrosion behavior of each constitute in the microstructure of steel is investigated with electrochemical noise analyses; the electronic properties of passive films were studied with Mott-Schottky relationship. It is found that the passive films formed on the materials under investigation are highly disordered n-type semiconductors. The high-to-low pitting susceptibility is ferrite > martensite > pearlite. The pitting resistance is related to the semiconductive nature of the passive film formed on each constitute. The pitting susceptibility increases with the donor concentration in the passive films. (author)
2003-08-24
Permeation barrier properties of thin oxide films on flexible polymer substrates
Energy Technology Data Exchange (ETDEWEB)
Solar cells and organic electronic devices require an encapsulation to ensure sufficient lifetime. Key parameters of the encapsulation are permeation barrier, UV stability, temperature stability, optical transmission spectra and mechanical stability. The requirements depend very much on the specific application. Many work groups suggest multilayer stacks to meet the permeation requirements. In this paper the permeation barrier properties of the different constituents of such a multilayer stack are characterized. Different layer materials are compared regarding their water vapour and oxygen permeability as well as the influence of process parameters is examined. Finally temperature dependent permeation measurements are used to characterize the permeation mechanisms in the different constituents of the multilayer barrier.
2009-03-31
Performance improvement of quantum dot infrared photodetectors through modeling
British Library Electronic Table of Contents (United Kingdom)
This paper presents a method to evaluate and improve the performance of quantum dot infrared photodetectors (QDIPs). We proposed a device model for QDIPs. The developed model accounts for the self-consistent potential distribution, features of the electron capture and transport in realistic QDIPs in dark and illumination conditions. This model taking the effect of donor charges on the spatial distribution of the electric potential in the QDIP active region. The model is used for the calculation of the dark current, photocurrent and detectivity as a function of the structural parameters such as applied voltage, doping QD density, QD layers, and temperature. It explains strong sensitivity of dark current to the density of QDs and the doping level of the active region. In order to confirm our...
2010-01-01
Nanoporous YSZ film in electrolyte membrane of Micro-Solid Oxide Fuel Cell
International Nuclear Information System (INIS)
Yttria stabilized zirconia (YSZ) with 8 mol% Y was deposited by reactive magnetron sputtering onto oxidized (100) silicon substrates. It was possible to switch film texture from (111) to (200) by applying a strong RF substrate bias. Transmission electron microscopy showed that the film deposited under bias is porous and exhibits nanoscaled grains, whereas the film deposited without bias is dense and columnar. The ionic conductivity as a function of temperature revealed an activation energy of 1.04 eV. The mechanical stress could be tuned to low values by thermal post-annealing. Using the dense (111) film as electrolyte layer, and the porous (200) film as an interlayer to a porous Pt anode, an open circuit voltage of 0.85 V was obtained in a micro machined fuel cell structure.
2010-06-01
Mechanical properties of SiAlON glass surface after swift heavy-ion bombardment
International Nuclear Information System (INIS)
A Y-Mg-Si-Al-O-N glass was submitted to swift heavy-ion bombardment at GANIL (Caen, France) and the influence of irradiation on the mechanical properties was studied. The mechanical properties of the glass were characterized both before and after irradiation. Changes in hardness, elastic modulus and fracture toughness of the near-surface irradiated layer were determined using indentation techniques. SRIM calculations allowed to estimate the ions penetration range and the energy deposition relative to electronic and nuclear interactions, which can be correlated to the experimental damaged depth. Meyer's hardness and Young's modulus decrease by about 30 %, while fracture toughness is increased by more than 40 %. (authors)
Material-induced shunts in multicrystalline silicon solar cells
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-15
Material-induced shunts in multicrystalline silicon solar cells
International Nuclear Information System (INIS)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-01
Material-induced shunts in multicrystalline silicon solar cells
British Library Electronic Table of Contents (United Kingdom)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-01-01
Ion-induced phase formation in metal-silicon systems. [Xenon ion implantation effects
Energy Technology Data Exchange (ETDEWEB)
By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.
1985-01-11
Ion-induced phase formation in metal-silicon systems
International Nuclear Information System (INIS)
By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).
Interface-induced conversion of infrared to visible light at semiconductor interfaces
International Nuclear Information System (INIS)
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.
Improvement of the fatigue strength of AISI 4140 steel by an ion nitriding process
Energy Technology Data Exchange (ETDEWEB)
The influence of plasma nitriding on the fatigue behaviour of AISI 4140 low-alloy steel was investigated under varying process conditions of temperature (500-600 C), time (1-12 h), heat treatment before ion nitriding (quenched and tempered, normalized) and gas mixture (50% H{sub 2}-50% N{sub 2}). A rotating bending fatigue machine was used to determine the fatigue strength. It was found that the plasma nitriding improves the fatigue strength and increases the fatigue limit depending on the surface hardness of the case depth. The microstructure of surface and diffusion layers was examined by optical microscopy. The fracture surface of specimens and the origin of fatigue cracks were observed by scanning electron microscopy.
1995-06-01
British Library Electronic Table of Contents (United Kingdom)
The formation of nanoparticles during the radiation-induced chemical reduction of silver ions, copper ions, and nickel ions in films based on poly(acrylic acid)-poly(ethylenimine) complexes are studied via electron microscopy. This approach allows preparation of composites containing nanoparticles that are randomly distributed in the polymer matrix and materials with a regular spatial distribution of nanoparticles across the film thickness and in subsurface layers. The structure of metal-polymer hybrid materials is dependent on the irradiation conditions, the type of reduced metal ions, and their initial content in polymer matrices. The ratio between the rate of nucleation and the rate of growth of nanoparticles in the matrices of interpolyelectrolyte complexes depends on the intensity of ...
2011-01-01
Effects of coolant chemistry on corrosion of 3003 aluminum alloy in automotive cooling system
British Library Electronic Table of Contents (United Kingdom)
In this work, effects of coolant chemistry, including concentrations of chloride ions and ethylene glycol and addition of various ions, on corrosion of 3003 Al alloy were investigated by electrochemical impedance spectroscopy measurements and scanning electron microscopy characterization. In chloride-free, ethylene glycol-water solution, a layer of Al-alcohol film is proposed to form on the electrode surface. With the increase of ethylene glycol concentration, more Al-alcohol film is formed, resulting in the increase in film resistance and charge-transfer resistance. In the presence of Cl- ions, they would be involved in the film formation, decreasing the stability of the film. In 50% ethylene glycol-water solution, the threshold value of Cl- concentration for pitting initiation is within ...
2010-01-01
British Library Electronic Table of Contents (United Kingdom)
The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200?mm and 300?mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of ...
2008-01-01
Characterization of physically vapor deposited AF2400 thin films
Energy Technology Data Exchange (ETDEWEB)
Anti-reflective coatings made with Teflon AF2400 had the highest damage thresholds recorded for physical vapor deposited coatings at the Lawrence Livermore National Laboratory damage facility. Physical vapor deposited layers of Teflon AF2400, a perfluorinated amorphous polymer, maintained the bulk optical properties of a high transmittance from 200 nm to 1600 nm, and a low refractive index. In addition, the refractive index can be intentionally reduced by control of two common deposition parameters, deposition rate and substrate temperature. Scanning electron microscopy and nuclear magnetic resonance observations indicated that morphological changes caused the variations in the refractive index rather than compositional changes. The coatings adhered to fused silica and silicon wafers under normal laboratory handling conditions.
1993-11-01
Bulk and surface electronic structure of hexagonal boron nitride
International Nuclear Information System (INIS)
Accurate full-potential self-consistent linearized augmented-plane-wave (FLAPW) calculations have been carried out for hexagonal boron nitride. The resulting energy-band structure indicates that this material is an indirect-gap insulator and shows the existence of two unoccupied interlayer bands, similar to those found in graphite and graphite intercalation compounds. Chemical bonding is mainly covalent, with a small charge transfer towards the nitrogen atoms. Moreover, model-potential calculations, based on first-principles FLAPW wave functions and potentials, have been used to study slabs of thickness up to 35 layers. Contrary to the case of graphite, our results do not provide evidence of surface states associated with the interlayer bands.
Application of polycrystalline diffusion barriers
International Nuclear Information System (INIS)
Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi_2) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability polycrystalline and polyphase ...
Application of Vertically Integrated Electronics to Intelligent Trackers
At Super-LHC luminosity it is expected that the standard suite of L1 triggers for CMS will saturate. Information from the tracker will be needed to reduce trigger rates to satisfy the L1 bandwidth. Tracking trigger modules which correlate information from closely-spaced sensor layers to form an on-detector momentum filter are being developed by several groups. We report on a trigger module design which utilizes three dimensional IC technology to incorporate chips which are connected both to the top and bottom sensor, providing the ability to filter information locally. A demonstration chip, the VICTR, has been submitted to the Chartered/Tezzaron two-tier 3D run coordinated by Fermilab. We report on the 3D design concept, the status of the VICTR chip and associated sensor integration utilizing oxide bonding.
2010-01-01
Surface oxidation processes in compound semiconductors studied by profile imaging
International Nuclear Information System (INIS)
The profile imaging technique is used to study the oxidation of ZnTe and InP surfaces induced by in situ reaction due to the electron beam of the microscope and by ex situ heating in air. For both materials, in situ reaction with the electron beam resulted in desorption of the anion species and the formation of the metal oxide. The observation of In metal particles, and the fact that the rate of formation of In_2O_3 was substantially reduced by an improvement of the vacuum near the specimen region, suggested that the presence of oxygen is not involved in the desorption process. The ex situ heating of ZnTe up to 260 degrees C in air resulted in crystals of ZnO and Te metal, generally in a layered surface region with the sequence of ZnTe/Te/ZnO. The large Te crystals usually had an epitaxial relationship with the bulk ZnTe but the small ZnO crystals had random orientations. The ex situ heating of InP to 380 degrees C in air ...
Study of passive films formed on stainless steel surfaces, using Auger spectroscopy
International Nuclear Information System (INIS)
This paper deals with the characterization of passive films formed on stainless steel (26% Cr and 0 to 3%Mo). The influence of the applied passivation potential and the effect of molybdenum additions to steel upon the composition profiles of passive films formed in an aqueous NaCl solution (3.5% at pH 2.5) are studied. The technique involved is Auger electron spectroscopy combined with ion sputtering. Some electrochemical techniques have been used in conjunction. A quantitative approach of the Auger spectra during the progressive removal of the passive film is described. The peak-to-peak height of the Auger lines are treated in order to yield the atomic fraction of the various elements present in a given subsurface layer. The analytical study of the film by electron spectroscopy indicates that molybdenum plays a part at the metal-oxide interface where this element acts on the chromium diffusion process. This phenomenon, ...
1975-01-01
Structure and kinetics of Sn whisker growth on Pb-free solder finish
Energy Technology Data Exchange (ETDEWEB)
Standard Leadframes used in surface mount technology are finished with a layer of eutectic SnPb for passivation and for enhancing solder wetting during reflow. When eutectic SnPb is replaced by Pb-free solder, especially the eutectic SnCu, a large number of Sn whiskers are found on the Pb-free finish. Some of the whiskers are long enough to become shorts between the neighboring legs of the leadframe. How to suppress their growth and how to perform accelerated test of Sn whisker growth are crucial reliability issues in the electronic packaging industry. In this paper, we report the study of spontaneous Sn whisker growth at room temperature on eutectic SnCu and pure Sn finishes. Both compressive stress and surface oxide on Sn are necessary conditions for whisker growth. Structure and stress analyses by using the micro-diffraction in synchrotron radiation are reported. Cross-sectional electron microscopy, with samples prepared ...
2002-07-11
Processing and characterization of polyethylene/Brazilian clay nanocomposites
Energy Technology Data Exchange (ETDEWEB)
Nanocomposites containing polyethylene (PE) and montmorillonite clay organically modified (OMMT) with quaternary ammonium salts were obtained via direct melt intercalation. A montmorillonite sample from the Brazilian state of Paraiba was treated with four different types of quaternary ammonium salts. After the treatment, the powder was characterized by X-ray diffraction and scanning electron microscopy. The dispersion and morphologies of OMMT within PE were investigated by X-ray diffraction and transmission electron microscopy. The results revealed the formation of intercalated montmorillonite layers in the PE matrix. The thermal stability and flammability of the PE/montmorillonite clay nanocomposites were measured by thermogravimetry and horizontal burning tests for HB classification, Underwrites Laboratories (UL 94), respectively. It was shown that the samples do not degrade at the processing temperature. By adding only 3 ...
2007-02-15
Positron annihilation in high-T/sub c/ superconductors
International Nuclear Information System (INIS)
We report ab initio calculations of positron wave functions in the high-T/sub c/ superconductors YBa_2Cu_3O_7, Bi_2Sr_2CaCu_2O_8, and Tl_2Ba_2CaCu_2O_8 using the general potential linearized augmented plane-wave method. The calculated positron wave functions are fairly insensitive to whether or not electron-positron correlation is included in the calculation for YBa_2Cu_3O_7 and Tl_2Ba_2CaCu_2O_8, but the calculated positron density is quite sensitive to correlation in Bi_2Sr_2CaCu_2O_8. While the positron wave function samples primarily the chain region in YBa_2Cu_3O_7, the results indicate that positrons should be good probes of the Cu-O layer-derived electronic states near the Fermi energy in Tl_2Ba_2CaCu_2O_8 since a large overlap with these states is predicted.
Noise and microresonance of critical current in Josephson junction induced by Kondo trap states
We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main ...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
The ink jet printing technology is a relatively novel technique in development of organic electronic devices. The technique consists of working out depositions of organic layers by a piezo-based ink jet printer. In this work polymer conducting films deposited by ink jet printing technique on different plastic substrates has been demonstrated. The poly(3,4-ethylenedioxythiofene)/poly(4-styrenesulfonate) [PEDOT/PSS] and glycerol-modified PEDOT/PSS [G-PEDOT/PSS] were used like conducting inks to be applied on polyester and polyethylene terephthalate (PET) substrates. By means of the change of substrate associated to the deposition number or type of polymer ink used for printing of the conducting films, the sheet resistance can be modified. Such a behavior suggests that plastic substrate fulfills an important role for the changing of sheet resistance of the PEDOT/PSS and G-PEDOT/PSS films made by ink jet printing technique. Films obtained from this ...
2005-09-25
Energy Technology Data Exchange (ETDEWEB)
Chromium electroplated AISI 316L stainless steel was nitrided using inductively coupled plasma (ICP) for application in the bipolar plate of a polymer electrolyte membrane fuel cell (PEMFC). A continuous and thin chromium nitride layer was formed at the surface of the samples after ICP nitriding for 2 h at 400 C. The interfacial contact resistance (ICR) and corrosion resistance in simulated PEMFC operating conditions were higher than the required values, while they varied with the applied dc bias voltage during the nitriding process. The ICR value decreased with an increase in bias voltage. Potentiodynamic polarization measurements showed that all of the nitrided samples had excellent corrosion resistance with a current density of {proportional_to}10{sup -7} A cm{sup -2} at the cathode. It was also found that the oxygen content at the surface was not increased after the corrosion test. X-ray diffractometry (XRD), field emission scanning ...
2009-03-15
Front-End-Electronics Communication software for multiple detectors in the ALICE experiment
Energy Technology Data Exchange (ETDEWEB)
In the ALICE experiment at CERN, the Detector Control System (DCS) employs several interacting software components to accomplish its task of ensuring the correct operation and monitoring of the experiment. This paper describes the Front-End-Electronics Communication (FeeCommunication) software and its role within the DCS. The FeeCommunication software's central task is passing configuration and monitoring data between the top level DCS process control and the field devices of several detectors within ALICE. The lowest level of the FeeCommunication software runs on the DCS boards, specialized embedded systems which are in direct contact with the field devices and are physically located within the detector. The middle and upper layers run on standard PC hardware located in the counting room or other external locations. This paper focuses on the design and implementation of the FeeCommunication software and the steps that were taken to ...
2006-02-15
Energy Technology Data Exchange (ETDEWEB)
In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the smallest etch pit size.
2008-03-01
Comparison of beam-induced deposition using ion microprobe
International Nuclear Information System (INIS)
The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga incorporation by dual beam processing was reduced compared with that by ...
1999-01-02
Laboratory characterization of Interplanetary Dust Particles (IDPs) collected in the lower stratosphere represents a concrete analysis of cosmic dust properties which played a fundamental role in the origin and evolution of Solar System. The IDPs were characterized by Field Emission Scanning Electron Microscope (FESEM) analyses and by InfraRed (IR) micro-spectroscopy. We present the FESEM images of six IDPs: three smooth grains, two porous and one a compact sphere. We also show the results of micro-IR transmission measurements on four IDPs that allowed us to identify their spectral class according to the criteria defined by Sandford and Walker. Only three of the analyzed particles show IR transmission spectra with a dominant "silicate absorption feature" so that they could be assigned to the three IR spectral classes: one has been classified as "amorphous olivine", one appears to be a mixture of "olivines" and "pyroxenes" and one belongs to the ...
2007-01-01
British Library Electronic Table of Contents (United Kingdom)
A magnetic core/shell Fe3O4/FeMnOx catalyst was prepared by a simple oxidation-precipitation method. The catalyst was characterized by X-ray diffraction, transmission electron microscope, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, thermogravimetric analysis and cyclic voltammetry. The characterization studies verified that Fe3O4 core was coated with a layer of Fe-Mn oxide. The Fe3O4/FeMnOx was found to be an effective and stable heterogeneous catalyst for the discoloration of methylene blue (MB) in aqueous solution by H2O2. The high catalytic activity is due to the FeMnOx shell, which not only increased the surface hydroxyl groups, but also enhanced the interfacial electron transfer. The discoloration of MB could be due to the decomposition of H2O2 into ?OH ...
2011-01-01
Aluminum-containing intergranular phases in hot-pressed silicon carbide
Energy Technology Data Exchange (ETDEWEB)
Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a SiC-Al2OC liquid domain is ...
2003-01-12
$\\gamma$-ray bursts from internal shocks in a relativistic wind temporal and spectral properties
We construct models for gamma-ray bursts where the emission comes from internal shocks in a relativistic wind with a highly non uniform distribution of the Lorentz factor. We follow the evolution of the wind using a very simplified approach where a large number of layers interact by direct collisions but where all pressure waves have been suppressed. We suppose that the magnetic field and the electron Lorentz factor reach large equipartition values in the shocks. Synchrotron photons emitted by the relativistic electrons have a typical energy in the gamma-ray range in the observer frame. Synthetic bursts are constructed as the sum of the contributions from all the internal elementary shocks and their temporal and spectral properties are compared to the observations. We reproduce the diversity of burst profiles, the ``FRED'' shape of individual pulses and the short time scale variability. Synthetic bursts also satisfy the ...
1998-01-01
Estimation of gamma-absorption method for measurement of layers thickness in multi-layers articles
International Nuclear Information System (INIS)
Certain problems of gamma-absorption method of measuring the thickness of layers in multi-layer items are analyzed. Two examples of solving the above-mentioned problems have been considered. One of them deals with a two-layer item, its integral thickness being known or measured in advance, the second example is referred to a two-layer item with unknown integral value
Electrospun carbon fiber mat with layered architecture for anode in microbial fuel cells
British Library Electronic Table of Contents (United Kingdom)
Layered carbon fiber mats have been prepared by layer-by-layer (LBL) electrospinning of polyacrylonitrile onto thin natural cellulose paper and subsequent carbonization. The layered carbon fiber mat has been proved to be a promising microbial fuel cell anode for high density layered biofilm propagation and high bioelectrocatalytic anodic current density.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report on a comparative study of active screen plasma nitriding (ASPN) and conventional dc plasma nitriding (CPN) behavior of 30CrNiMo8 low-alloy steel that has been examined under various process conditions. The process variables included active screen setup parameters (screen and iron plate top lids placed on the screen setup with 8 mm of hole size), treatment temperature (550 and 580 deg. C), gas mixture (75/25 and 25/75 of N{sub 2}/H{sub 2}) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the diffusion zone and compound layer were studied by X-ray diffraction (XRD), microhardness tests, light optical microscopy and scanning electron microscopy (SEM). It was observed that treated sample surfaces in both CPN and ASPN methods consist of {gamma}' and {epsilon} phases, and while the nitriding time and/or temperature increases, the intensity of {epsilon} phase in the compound ...
2007-12-30
International Nuclear Information System (INIS)
In this paper, we report on a comparative study of active screen plasma nitriding (ASPN) and conventional dc plasma nitriding (CPN) behavior of 30CrNiMo8 low-alloy steel that has been examined under various process conditions. The process variables included active screen setup parameters (screen and iron plate top lids placed on the screen setup with 8 mm of hole size), treatment temperature (550 and 580 deg. C), gas mixture (75/25 and 25/75 of N_2/H_2) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the diffusion zone and compound layer were studied by X-ray diffraction (XRD), microhardness tests, light optical microscopy and scanning electron microscopy (SEM). It was observed that treated sample surfaces in both CPN and ASPN methods consist of #gamma#' and #epsilon# phases, and while the nitriding time and/or temperature increases, the intensity of #epsilon# phase in the compound ...
2007-12-30
Energy Technology Data Exchange (ETDEWEB)
Lithium (Li) plating-stripping reaction properties at the lithium phosphorus oxynitride glass electrolyte (LiPON)/copper thin film (Cu) interface is improved by the insertion of nano-thickness platinum (Pt) layer at the interface. The LiPON films are formed on mirror-polished lithium-ion conductive solid electrolyte sheets, and current collector thin films of Li, Cu-Pt multi layer, and Cu are formed on the LiPON films. The plating-stripping reactions at the LiPON/current collector films interface are carried out by galvanostatic and potential sweep measurements. Galvanostatic measurements reveal that Pt layer insertion reduces the overvoltage of the reaction and improves its coulomb efficiency. Also, cyclic voltammetry measurement suggests formation of Li-Pt alloys at higher voltages than 0 V (vs. Li/Li{sup +}) during the lithium plating process. Scanning electron microscopy observation clarifies that ...
2011-02-15
RF plasma nitriding of severely deformed iron-based alloys
International Nuclear Information System (INIS)
The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10"-"5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of #epsilon# and #gamma#' nitrides in the compound layer, with a preferential formation of #gamma#' at the expense of the #alpha#-phase at the higher ...
2003-05-15
Partial preservation of the Tentaculites Crotalinus shell from Ponta Grossa Formation (Devonian)
International Nuclear Information System (INIS)
This paper deals with an analysis of a single specimen of Tentaculites crotalinus SALTER emend. CIGUEL et al. (1984) that present a possible partial preservation of the shell. It comes from an outcrop of the Grossa Formation (Devonian) near Jaguariaiva, State of Parana. The skeletal microstructure of the Tentaculitoidea shell rather poorly Known. Thus, the phylogenetic relationships of these invertebrates still uncertain. Tentaculitids are very common fossils in Devonian Ponta Grossa Formation (Parana Basin) but so far Known only from external and internal moulds. The objective of this study is to demonstrate wheter the layer found in between the internal and external mould is or not a case shell preservation. The chemical composition of this layer and of the external mould was analysed by X rays. X rays difratometry was applied only to the matrix (at the external mould). The structure of the supposed shell remain was studied by binocular ...
Graded layer design for stress-reduced and strongly adherent superhard amorphous carbon films
Energy Technology Data Exchange (ETDEWEB)
Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with high compressive stress in the order of 4 GPa as well as a low adhesion, which means that the critical ...
1999-09-01
Energy Technology Data Exchange (ETDEWEB)
The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the {mu}m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure types of different bar ...
2008-12-15
International Nuclear Information System (INIS)
The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure types of different bar width and density ...
2008-12-01
Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is ...
1981-08-01
Flexible organic electronic devices: Materials, process and applications
Energy Technology Data Exchange (ETDEWEB)
The research for the development of flexible organic electronic devices (FEDs) is rapidly increasing worldwide, since FEDs will change radically several aspects of everyday life. Although there has been considerable progress in the area of flexible inorganic devices (a-Si or solution processed Si), there are numerous advances in the organic (semiconducting, conducting and insulating), inorganic and hybrid (organic-inorganic) materials that exhibit customized properties and stability, and in the synthesis and preparation methods, which are characterized by a significant amount of multidisciplinary efforts. Furthermore, the development and encapsulation of organic electronic devices onto flexible polymeric substrates by large-scale and low-cost roll-to-roll production processes will allow their market implementation in numerous application areas, including displays, lighting, photovoltaics, radio-frequency identification circuitry and chemical ...
2008-08-25
Transient optical and electrical effects in polymeric semiconductors
Energy Technology Data Exchange (ETDEWEB)
Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the ...
2009-05-28
Mass transfer model for two-layer TBP oxidation reactions: Revision 1
Energy Technology Data Exchange (ETDEWEB)
To prove that two-layer, TBP-nitric acid mixtures can be safely stored in the Canyon evaporators, it must be demonstrated that a runaway reaction between TBP and nitric acid will not occur. Previous bench-scale experiments showed that, at typical evaporator temperatures, this reaction is endothermic and therefore cannot run away, due to the loss of heat from evaporation of water in the organic layer. However, the reaction would be exothermic and could run away if the small amount of water in the organic layer evaporates before the nitric acid in this layer is consumed by the reaction. Provided that there is enough water in the aqueous layer, this would occur if the organic layer is sufficiently thick so that the rate of loss of water by evaporation exceeds the rate of replenishment due to mixing with the aqueous layer. Bubbles containing ...
1994-11-04
Mass transfer model for two-layer TBP oxidation reactions
Energy Technology Data Exchange (ETDEWEB)
To prove that two-layer, TBP-nitric acid mixtures can be safely stored in the canyon evaporators, it must be demonstrated that a runaway reaction between TBP and nitric acid will not occur. Previous bench-scale experiments showed that, at typical evaporator temperatures, this reaction is endothermic and therefore cannot run away, due to the loss of heat from evaporation of water in the organic layer. However, the reaction would be exothermic and could run away if the small amount of water in the organic layer evaporates before the nitric acid in this layer is consumed by the reaction. Provided that there is enough water in the aqueous layer, this would occur if the organic layer is sufficiently thick so that the rate of loss of water by evaporation exceeds the rate of replenishment due to mixing with the aqueous layer. This report presents ...
1994-09-28
Growth and electronic properties of two-dimensional systems on (110) oriented GaAs
Energy Technology Data Exchange (ETDEWEB)
As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...
2005-07-01
Effects of ions and electrons on atmospheric lifetimes of fully fluorinated compounds
International Nuclear Information System (INIS)
Fully fluorinated compounds (perfluoro compounds) represent a class of chemicals which include many extremely inert species-inert to both chemical reaction and photodissociation. Well known examples include SF6 and the perfluorocarbons (PFCs) CF_4 and Teflon. SF_6 is used industrially in electrical switch gear and as an atmospheric tracer. CF_4 and C_2F_6 are released into the atmosphere as a by-product of aluminum manufacture. Several perfluoro compounds have been proposed as substitutes for the ozone-destroying Freons and halons; proposed substitutes include SF_6, c-C_4F_8, C_5F_1_2, and C_6F_1_4. These chemicals were chosen in part because they do not harm the stratospheric ozone layer and were therefore considered environmentally friendly. Recently, Ravishankara et al. reported that perfluoro compounds have significant global warming potential (GWP), contributing to the greenhouse effect due to strong infrared absorption. The perfluoro compounds have ...
1994-04-05
CaF sub 2 passivation layers for high temperature superconductors
Energy Technology Data Exchange (ETDEWEB)
This patent describes a method comprising applying a passivation layer of CaF{sub 2} to the surface of a superconductive ceramic oxide by evaporation. The CaF{sub 2} layer is effective to passivate the oxide surface without disrupting the superconductive properties.
1990-10-23
A rational vision of stratospheric ozone
Energy Technology Data Exchange (ETDEWEB)
This work deals with a rational vision of stratospheric ozone including the threats on ozone layer, the verifications and the fears. After a recalling on the ozone layer history, the authors treats the question of the ultraviolets particularly the beneficial effects. Then an explanation of the ozone layer decrease is given. (O.L.). 29 refs., 6 figs.
1995-03-01
Scanning Electron Microscope Examination of Cotton Linters ...
... TECHNICAL REPORT ARBRL-TR-02476 SCANNING ELECTRON MICROSCOPE ... SCANNING ELECTRON MICROSCOPE EXAMINATION OF ...
1983-03-01
A finite three-dimensional layer-by-layer photonic crystal with planar defects in a layer is shown to drastically modify the spontaneous emission rate of an embedded dipole. Finite-difference time-domain calculations with one quarter symmetric boundary condition and perfectly matched layer demonstrate the strong enhancement effects induced by the cavity resonance of defect modes and band-edge resonant modes. Simulation shows that the emission spectra are quite different when the position or polarization of the dipole is changed. Moreover, the extraction efficiency is calculated to observe the percentage of light leakage through a substrate.
2010-01-01
Choice of energies in gamma-absorption method for layers thickness measuring of two-layers articles
International Nuclear Information System (INIS)
Empirical formulae are proposed for the description of relation between optimum energies minimizing the mean-weighted error of gamma absorption measurement of the thickness of layers in two-layer products with the thickness of every layer from 30 up to 150 mm by carbon. Error of informational parameter approximation with the application of tables does not exceed 10% in case of non-accurate assessment of layers thickness not exceeding 2.5%. Generalized equation is derived which binds main parameters of the task and permits to choose optimum energies with the accuracy sufficient for practical purposes
Understanding and controlling transient enhanced dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 ...
1995-12-31
Understanding and controlling transient enhanced dopant diffusion in silicon
International Nuclear Information System (INIS)
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 ...
Energy Technology Data Exchange (ETDEWEB)
This work presents a comparative study of low-alloy steel nitriding for different possible techniques. Active screen plasma nitriding (ASPN) is a successful surface modification method that has many advantages over the conventional DC plasma nitriding (CPN). The corrosion behavior of 30CrNiMo8 low-alloy steel has been examined using anodic polarization tests in 3.5% NaCl solution under varying conditions of ASPN and CPN processes. The process variables included active screen setup parameters, treatment temperature (550 and 580 deg. C), gas mixture (25/75 and 75/25 of N{sub 2}/H{sub 2}) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the compound layer was studied by X-ray diffraction (XRD), microhardness tests, optical microscopy and scanning electron microscopy (SEM). It was observed that ASPN treated samples surface enhanced corrosion resistance while the temperature and/or hole size of screen setup ...
2009-09-18
International Nuclear Information System (INIS)
This work presents a comparative study of low-alloy steel nitriding for different possible techniques. Active screen plasma nitriding (ASPN) is a successful surface modification method that has many advantages over the conventional DC plasma nitriding (CPN). The corrosion behavior of 30CrNiMo8 low-alloy steel has been examined using anodic polarization tests in 3.5% NaCl solution under varying conditions of ASPN and CPN processes. The process variables included active screen setup parameters, treatment temperature (550 and 580 deg. C), gas mixture (25/75 and 75/25 of N_2/H_2) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the compound layer was studied by X-ray diffraction (XRD), microhardness tests, optical microscopy and scanning electron microscopy (SEM). It was observed that ASPN treated samples surface enhanced corrosion resistance while the temperature and/or hole size of screen setup ...
2009-09-18
The DITE (Divertor Injection Tokamak Experiment) program has been undertaken to demonstrate the feasibility of impurity control by the use of a diverter in an injection-heated toroidal plasma configuration. Rather than behaving in accordance with neoclassical toroidal containment theory, the plasma is subject to various instabilities, particularly the resistive fluid MHD types, follows the empirical scaling of energy confinement time with plasma parameters observed in other plasma devices. DITE experiments have, however, extended the range of current and density. Impurities arising from plasma interactions with the vacuum vessel surface are controlled by the bundle divertor, which diverts a portion of plasma and power in the plasma scrape-off layer into a separate target chamber where impurities can be removed. Auxiliary plasma heating is provided by the injection of powerful beams of neutral hydrogen atoms produced by multi-aperture ion sources and hydrogen gas ...
1981-04-01
Energy Technology Data Exchange (ETDEWEB)
Praseodymium-doped Bi{sub 4}Ti{sub 3}O{sub 12} (BIT) with various compositions of dopant, Pr (x = 0.5, 0.6, 0.7, 0.8) in Bi{sub 4-x}Pr{sub x}Ti{sub 3}O{sub 12} (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800 deg. C exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x = 0.5) resulted in dramatically reduced of grain size from 2 {mu}m to less than 50 nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1 {mu}m was observed for x = 0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the addition of x = 0.50, and increasing with further addition of Pr. Dissipation factor (tan {delta}) ...
2009-05-05
International Nuclear Information System (INIS)
Praseodymium-doped Bi_4Ti_3O_1_2 (BIT) with various compositions of dopant, Pr (x = 0.5, 0.6, 0.7, 0.8) in Bi_4_-_xPr_xTi_3O_1_2 (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800 deg. C exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x = 0.5) resulted in dramatically reduced of grain size from 2 #mu#m to less than 50 nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1 #mu#m was observed for x = 0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the addition of x = 0.50, and increasing with further addition of Pr. Dissipation factor (tan #delta#) followed the same trend as ...
2009-05-05
British Library Electronic Table of Contents (United Kingdom)
Praseodymium-doped Bi4Ti3O12 (BIT) with various compositions of dopant, Pr (x=0.5, 0.6, 0.7, 0.8) in Bi4-xPrxTi3O12 (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800degreeC exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x=0.5) resulted in dramatically reduced of grain size from 2mm to less than 50nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1mm was observed for x=0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the ad...
2009-01-01
British Library Electronic Table of Contents (United Kingdom)
Abstract A series of compounds with the general formula (La1-xSmx)2Ti2O7 (0-- x --1.0) has been synthesized by a sol-gel method and characterized by XRD, Raman spectroscopy, and scanning electron microscopy (SEM). These compounds are structurally isomorphic to perovskite-type La2Ti2O7 until a substitution rate of x = 0.8. Above this substitution rate (x >-0.8), a biphasic mixture is obtained between the substituted perovskite layered phase and the pyrochlore Sm2Ti2O7 phase. The unusual phosphor (La1-xSmx)2Ti2O7 has been elaborated and its luminescent properties were investigated for low rates of substitution. The emission and excitation spectra were used to study the luminescent properties. The (La1.9Sm0.1)2Ti2O7 powders emit bright red-orange lightunder UV excitation. The emission propert...
2011-01-01
International Nuclear Information System (INIS)
In this work we report a study of the induced changes in structure and corrosion behavior of martensitic stainless steels nitrided by plasma immersion ion implantation (PI"3) at different previous heat treatments. The samples were characterized by x-ray diffraction and glancing angle x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and potentiodynamic measurements. Depending on the proportion of retained austenite in the unimplanted material, different phase transformations are obtained at lower and intermediate temperatures of nitrogen implantation. At higher temperatures, the great mobility of the chromium yields CrN segregations like spots in random distribution, and the #alpha#"'-martensite is degraded to#alpha#-Fe (ferrite). The nitrided layer thickness follows a fairly linear relationship with the temperature and a parabolic law with the process time. The corrosion resistance depends strongly on ...
2006-09-01
Polysilicon thin film transistors fabricated on low temperature plastic substrates
Energy Technology Data Exchange (ETDEWEB)
We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}
1999-07-01
Energy Technology Data Exchange (ETDEWEB)
PVD-chromium-nitride coated samples of substrates of the magnesium alloy AZ91hp and the roller and ball bearing steel 100Cr6 were investigated regarding structure, mechanical characteristics, adhesion and internal stresses. For the coatings the parameters layer thickness and substrate BIAS voltage were varied. Both substrate materials were coated in one lad. Results of the X-ray analysis of the internal stresses show significant differences between the coated magnesium and the coated steel substrates. In the case of the variation of the substrate BIAS voltage, for the coated steel a dependency of the internal stresses to coating parameters could be obtained. For the coated magnesium no dependency was recognizable. The coating structure was examined with scanning electron microscopy. Element depth profiles of the coated samples were performed with SIMS. (orig.)
2001-03-01
A systematic study of the Bragg nuclear resonant reflectivity from periodic multilayers in the energy and time domains is presented. Using the kinematical approach of the general reflectivity theory we describe the basic features of the time evolution of the reflected wave after a pulsed excitation of resonant multilayers by synchrotron radiation. Effects of the collective excitation have been examined such as the shift of quantum beat phases, the interplay between electronic and nuclear subsystem excitations depending on their relative position in a multilayer, the energy and time evolution of standing waves inside a resonant multilayer, and their influence on the reflectivity spectra. The exact expression for the reflectivity by a thin resonant layer placed inside a multilayer structure has been derived. The observed shift of the delayed reflectivity Bragg peak relative to the prompt peak is explained by the developed formalism. Experimental ...
2005-09-15
Linear augmented-plane-wave calculation of the structural properties of bulk Cr, Mo, and W
International Nuclear Information System (INIS)
A scalar-relativistic procedure for calculating the valence-electron contribution to the total energy of bulk and thin-film solids has been developed and applied to the fcc and bcc phases of the group-VIB transition elements Cr, Mo, and W. This approach, which is based on the linear augmented-plane-wave method and local-density-functional theory, contains no shape approximations for either the charge density or potential. The formulation adopts a rigid-core approximation and incorporates an exact treatment of the core-charge tails that extend beyond the muffin-tin spheres. The application of this procedure to bcc Cr, Mo, and W yields calculated lattice parameters and bulk moduli that are in good (Cr) to excellent (Mo and W) agreement with experiment. The present calculated properties also agree quite well with the results of previous calculations involving a variety of band-structure methods. The calculated fcc-bcc energy difference for Cr, Mo, and W increases in a ...
Interface-induced conversion of infrared to visible light at semiconductor interfaces
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}
1996-08-01
Indentation modulus and hardness in heteroepitaxial Al{sub x}Ga{sub 1{minus}x}P films
Energy Technology Data Exchange (ETDEWEB)
Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.
1997-05-01
How epitaxial are Pd/sub 2/Si-Si interfaces
Energy Technology Data Exchange (ETDEWEB)
Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the materials produced higher values for the rougher evaporation-formed interfaces ...
1983-06-17
Growth and characterisation of electrodeposited ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was found to be 0.40 {mu}m as ...
2008-04-30
International Nuclear Information System (INIS)
Nanowires of copolymers film based on aniline and 1-amino-2-naphthol-4-sulphonic acid were electrochemically synthesized on the iron electrode by cyclic voltammetry using oxalic acid as a supporting electrolyte. Protective properties of copolymer film on the iron surface in 1.0 M HCl solution was investigated by chronoamperometry, potentiodynamic polarization technique and electrochemical impedance spectroscopy (EIS). The results showed that the copolymer film showed the significant shifting in the corrosion potential and greater charge transfer resistance. Moreover, the copolymer showed the larger degree of surface coverage onto the iron surface, reflecting the higher protection for corrosion of the iron in acidic medium. In addition, the film constitutes a physical as well as a chemical barrier layer due to the presence of -OH and -NH groups in ANSA unit, which provides passivity protection in polymer coatings. The mechanism of corrosion protection of iron by ...
2010-11-30
Development of high-efficiency GaAs solar cells on polycrystalline Ge substrates
Energy Technology Data Exchange (ETDEWEB)
Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our previous best efficiency from ...
1996-01-01
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its ...
1989-03-01
Copper and brass aged at open circuit potential in slightly alkaline solutions
Energy Technology Data Exchange (ETDEWEB)
Surface oxide films were grown on 99.99% copper and brass (copper-zinc alloy, Cu77Zn21Al2) in 0.1 mol L{sup -1} borax solution at open circuit potential and were characterized using various experimental techniques. The composition of the passive films formed in situ on the different materials was studied using differential reflectance spectroscopy. The thickness of the oxide layers on copper and brass was compared by chronopotentiometric curves and potentiodynamic reductions. The electrical properties of each oxide were analyzed by means of electrochemical impedance spectroscopy. Their influence on the oxygen reduction reaction was also investigated using voltammetry hydrodynamic tools such as the rotating disk electrode. The results show that the incorporation of Zn to Cu in brass changes the composition and the thickness of the surface film. The films grown on brass tend to be thicker but less resistive and Zn compounds incorporate to the film. This is supported ...
2009-12-01
Controlled grain boundary structures in superconductors. Final report 1 Jan 77-31 Dec 81
Energy Technology Data Exchange (ETDEWEB)
Theoretical work supported by this grant has lead to the concept of the specific pinning force Q and the development of new methods to sum elementary interaction forces to find Q. Pinning due to changes in transition temperature or thermodynamic critical field in thin layers (e.g., a grain boundary), is greatly reduced due to the proximity effect and the stress field interaction due to the dislocations in the grain boundary has been shown to be negligible. The crystalline anisotropy (CA) and electron scattering (ES) interactions have been computed for the first time for an arbitrary boundary. Experiments on niobium bicrystals, polycrystalline niobium thin foils doped with oxygen, lead-bismuth alloy thin films and lead-bismuth alloy films in which either lead or thallium has been allowed to diffuse down the grain boundaries and out into the grains provide evidence that confirms the predictions of the theory. These results suggest that further ...
1982-03-01
Energy Technology Data Exchange (ETDEWEB)
In the past, organic substance is generally deemed as electrical insulator, but in recent years, molecular crystals and polymers showing electroconductivity like metal were synthesized and even those showing superconductivity have appeared. These materials are called organic metals or synthetic metals and have peculiar solid state physical properties. Examples of real application of organic electroconductive materials are becoming available, but in this article, a chip type aluminum solid electrolytic capacitor using polypyrrole is introduced. There are four kinds of capacitors including ceramic capacitors and aluminum electrolytic capacitors, etc. The aluminum electrolytic capacitor is most retarded than any other type of capacitor in introducing its chip type since its use of electrolytic solution becomes an obstacle. Polypyrrole synthesized by electrolytic polymerization through anode oxidation of pyrrole has good stability and high electroconductivity. Introduction of the chip type ...
1990-07-05
Energy Technology Data Exchange (ETDEWEB)
A modulation transfer function (MTF) calibration method based on binary pseudo-random (BPR) gratings and arrays [Proc. SPIE 7077-7 (2007), Opt. Eng. 47, 073602 (2008)] has been proven to be an effective MTF calibration method for a number of interferometric microscopes and a scatterometer [Nucl. Instr. and Meth. A616, 172 (2010)]. Here we report on a further expansion of the application range of the method. We describe the MTF calibration of a 6 inch phase shifting Fizeau interferometer. Beyond providing a direct measurement of the interferometer's MTF, tests with a BPR array surface have revealed an asymmetry in the instrument's data processing algorithm that fundamentally limits its bandwidth. Moreover, the tests have illustrated the effects of the instrument's detrending and filtering procedures on power spectral density measurements. The details of the development of a BPR test sample suitable for calibration of scanning and transmission ...
2011-03-14
Energy Technology Data Exchange (ETDEWEB)
A modulation transfer function (MTF) calibration method based on binary pseudo-random (BPR) gratings and arrays [Proc. SPIE 7077-7 (2007), Opt. Eng. 47(7), 073602-1-5 (2008)] has been proven to be an effective MTF calibration method for a number of interferometric microscopes and a scatterometer [Nucl. Instr. and Meth. A 616, 172-82 (2010]. Here we report on a significant expansion of the application range of the method. We describe the MTF calibration of a 6 inch phase shifting Fizeau interferometer. Beyond providing a direct measurement of the interferometer's MTF, tests with a BPR array surface have revealed an asymmetry in the instrument's data processing algorithm that fundamentally limits its bandwidth. Moreover, the tests have illustrated the effects of the instrument's detrending and filtering procedures on power spectral density measurements. The details of the development of a BPR test sample suitable for calibration of scanning and transmission ...
2010-07-26
AlGaInP single quantum well laser diodes
Energy Technology Data Exchange (ETDEWEB)
The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.
1994-12-31
A study into effects of CO2 laser melting of nitrided Ti-6Al-4V alloy
Multiple treatment of engineering surfaces can provide improved surface properties that cannot be obtained by a single surface treatment. Consequently, this study investigates the effects of laser melting on the microstructures of plasma nitrided Ti-6Al-4V alloy. The study consists of two parts. In the first part, governing equations pertinent to the laser melting process are developed, and temperature variation across the melted zone is predicted. In the second, an experiment is conducted to nitride the surface of the alloy through plasma nitriding process and to melt the plasma nitrided and the untreated alloy surfaces with a CO2 laser beam. The resulting metallurgical changes are examined using x-ray diffraction (XRD), bdenergy-dispersive spectrometry (EDS), and scanning electron microscopy (SEM) techniques. It is shown that three distinct nitride layers are formed in the vicinity of the alloy surface prior to the laser melting process, and ...
1997-10-01
RF plasma nitriding of severely deformed iron-based alloys
Energy Technology Data Exchange (ETDEWEB)
The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10{sup -5} bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of {epsilon} and {gamma}' nitrides in the compound layer, with a preferential formation of {gamma}' at the expense of the ...
2003-05-15
Wear and friction behaviour of duplex-treated AISI 4140 steel
Energy Technology Data Exchange (ETDEWEB)
In this study samples of AISI 4140 steel were pretreated by plasma nitriding and coated with two different physical vapour deposited coatings (TiN and TiAlN). A hardened AISI 4140 sample and a coated sample were also included in the investigation. To examine the influence of the nitrided zone on the performance of the coating-substrate composite, two different nitriding conditions - a conventional 25% N{sub 2} and an N{sub 2}-poor gas mixture - were used. The specimens were investigated with respect to their microhardness, surface roughness, scratch adhesion and dry sliding wear resistance. Wear tests in which the duplex-treated pins were mated to hardened ball bearing steel discs were performed in a pin-on-disc machine under dry sliding conditions. Metallography, scanning electron microscopy and profilometry were used to analyse the worn surfaces in order to determine the dominant friction and wear characteristics of the samples investigated. The results show ...
1999-11-01
International Nuclear Information System (INIS)
Spherical aggregates formed rapidly in culture by re-aggregation of trypsin-dissociated brain cells from the 17-day-old fetal rat. Over about 10 days an initially random distribution of cells evolved into a 3-layered arrangement; cells with characteristics of neurons were found largely in the intermediate layer. The survival of neuronal and glial cell types was evaluated histologically and verified by electron microscopy, which revealed synaptic and myelin structures that rapidly increased in number after 18 days in culture. Levels of norepinephrine (NE) and dopamine (DA) reached peaks of 9.5 and 4.4 ng/mg protein, respectively, at culture day 21. Uptake of ["3H]NE paralleled these amine levels and was blocked by desipramine or pretreatment with either reserpine or 6-OH-DA. Autoradiographs of aggregates labeled with ["3H]NE showed a high density of silver grains over cells, apparently neurons, with branching processes ...
International Nuclear Information System (INIS)
Buffer layers with 100% lattice match with YBa2Cu3O7 - ? (YBCO) were prepared from mixed rare-earth-oxides applying a simple sol-gel process and dip-coating method. Structural analysis of the sol-gel derived powder by X-ray diffraction revealed that the mixing parameter, which eliminates the lattice mismatch with YBCO, is x = 0.2382, 0.1852, 0.1252, 0.0906, 0.0793 and 0.0395 in (Eu1 - xHox)2O3, (Eu1 - xErx)2O3, (Eu1 - xYbx)2O3, (Gd1 - xHox)2O3, (Gd1 - xYx)2O3 and (Gd1 - xYbx)2O3, respectively. Microstructural investigations were carried out for Gd1.819Ho0.181O3 films epitaxially grown on cube-textured Ni (100) substrates by sol-gel dip-coating process. X-ray diffraction of the buffer showed strong out-of-plane orientation on Ni tape. The (Gd1 - xHox)2O3 (222) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alne alignments. The full-width at half-maximum values of omega and phi scan of ...
2010-04-02
Pulse height response of Si surface barrier detectors to 5-70 MeV heavy ions
Energy Technology Data Exchange (ETDEWEB)
An extensive series of pulse height measurements have been performed in partially depleted Si surface barrier detectors, using various heavy ions (Li, B, C, O, Al and Cl), at energies between 5 and 70 MeV. After correcting for the small energy loss of the incident ions in traversing the gold surface barrier layer of the detector and for the residual nuclear stopping, the resulting pulse heights per MeV for the various heavy ions were found to be up to 2.5% larger than for the {sup 241}Am (5.486 MeV) alpha particle. This increase, although significant, is smaller than had been anticipated from an extrapolation of the earlier study of H, He and Li pulse heights by Lennard et al.. A new method of analysis of pulse height data, which significantly reduces the uncertainties associated with the dead layer energy loss and nuclear stopping corrections, was used in order to determine directly the variation of the average energy for ...
1992-04-01
Kinetics of Pd/sub 2/Si layer growth measured by an x-ray diffraction technique
An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were ...
1986-05-15
In situ scanning tunneling microscope study of the passivation of Cu(111)
Energy Technology Data Exchange (ETDEWEB)
In situ scanning tunneling microscopy has been used to study the nucleation and growth mechanisms and the structure of passive films formed on Cu(111) surfaces in 0.1 M borate buffer solution (pH 9.3). A surface topography characterized by terraces with monoatomic steps is obtained after potentiodynamic reduction down to {minus}1.12 V/standard hydrogen electrode (SHE), of the electropolished surface exposed to air. The formation of a single Cu{sub 2}O passive layer at 0.03 V/SHE proceeds first by a roughening of the steps assigned to a locally blocked step flow process due to a competition between dissolution and preferential nucleation of the oxide at the steps. The observed oxide nuclei are 2--3 nm wide and about one atomic plane high. This process leads to the complete coverage of the terraces by a grain-like structure of the oxide film. The initial terrace topography is completely altered. Thickening of this oxide layer leads to unstable ...
1999-02-01
Energy Technology Data Exchange (ETDEWEB)
The particle surface of Li[Ni{sub 1/3}Co{sub 1/3}Mn{sub 1/3}]O{sub 2} was modified by AlF{sub 3} as a new coating material to improve the electrochemical properties in the high cutoff voltage of 4.5 V. The AlF{sub 3}-coated Li[Ni{sub 1/3}Co{sub 1/3}Mn{sub 1/3}]O{sub 2} showed no difference in the bulk structure compared with the pristine one and the uniform AlF{sub 3} coating layers whose thickness is of about 10 nm covered Li[Ni{sub 1/3}Co{sub 1/3}Mn{sub 1/3}]O{sub 2} particles, as confirmed by a transmission electron microscopy. The AlF{sub 3} coating on Li[Ni{sub 1/3}Co{sub 1/3}Mn{sub 1/3}]O{sub 2} particles improved the overall electrochemical properties such as the cyclability, rate capability and thermal stability compared with those of the pristine Li[Ni{sub 1/3}Co{sub 1/3}Mn{sub 1/3}]O{sub 2}. Such enhancements were attributed to the presence of the stable AlF{sub 3} layer which acts as the interfacial stabilizer on ...
2008-04-01
Growth of high-density Ru- and RuO_2-composite nanodots on atomic-layer-deposited Al_2O_3 film
International Nuclear Information System (INIS)
Growth of Ru- and RuO_2-composite (ROC) nanodots on atomic-layer-deposited Al_2O_3 film has been studied for the first time using ion-beam sputtering followed by post-deposition annealing (PDA). X-ray photoelectron spectroscopy analyses reveal that RuO_2 and Ru co-exist before annealing, and around 10% RuO_2 is reduced to metallic Ru after PDA at 900 deg. C for 15 s. Scanning electron microscopy measurements show that well-defined spherical ROC nanodots are not formed till the PDA temperature is raised to 900 deg. C. The mean diameter of the nanodots enlarges with increasing PDA temperature whereas the nanodot density decreases, which is attributed to coalescence process between adjacent nanodots. It is further illustrated that the resulting nanodot size and density are weakly dependent on the annealing time, but are markedly influenced by the decomposition of RuO_2. In this article, the ROC nanodots with a high density of 1.6 x 10"1"1 cm"-"2, ...
2007-02-15
International Nuclear Information System (INIS)
We have investigated the growth behaviors of high temperature compatible ZrO_2 insulation coatings on Ag and AgMg sheathed Bi_2Sr_2Ca_1Cu_2O_x superconducting tapes depending on number of dipping and thermal conditions. The coatings were fabricated on long-length superconducting tape substrates using a solution derived from Zr tetrabutoxide, solvent and chelating agent for high magnetic field magnets. The layer-on-layer growth behaviors were characterized by environmental scanning electron microscope (ESEM), energy dispersive spectroscopy (EDS), X-ray maps and X-ray diffraction (XRD). This research showed that the ZrO_2 coatings were regularly grown on Ag-based tape substrates and coating thickness increased with increasing number of dipping. It was found that ceramic oxides formed at temperature range 450 and 550 deg. C. The final coating thickness changed between 6 and 8 #mu#m after annealing process. Resistance of insulation measured from ...
2004-07-15
Fundamentals of focused ion beam nanostructural processing: below,at and above the surface
Energy Technology Data Exchange (ETDEWEB)
This article considers the fundamentals of what happens in asolid when it is impacted with a medium energy gallium ion. The study ofthe ion/sample interaction at the nanometer scale is applicable to mostfocused ion beam (FIB) based work even if the FIB/sample interaction isonly a step in the process, e.g., micromachining or microelectronicdevice processing. Whereas the objective in other articles in this issueis to use the FIB tool to characterize a material or to machine a deviceor transmission electron microscopy (TEM) sample, the goal of the FIB inthis article is to have the FIB/sample interaction itself become theproduct. To that end, the FIB/sample interaction is considered in threecategories according to geometry: below, at, and above the surface.First, the FIB ions can penetrate the top atom layer(s) and interactbelow the surface. Ion implantation and ion damage on flat surfaces havebeen comprehensively examined; however, FIB ...
2007-03-30
Energy Technology Data Exchange (ETDEWEB)
The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced from {approx}10{sup 6} before aging. Therefore, the enhanced long-term stability of ...
2005-12-15
Alloying element diffusion in alloy 800 H (UNS N08810) and alloy 617 (UNS N06617)
Energy Technology Data Exchange (ETDEWEB)
Samples of alloy 800 H (LJNS N08810) and alloy 617 (UNS N06617) were oxidized in a simulated process gas atmosphere. The principal elements of the gaseous environment were 50% H{sub 2}O, 35% H{sub 2} and 5% of CO{sub 2}, CO, and CH{sub 4}, respectively. The experiments were carried out at temperatures from 850 C to 950 C for exposures ranging from 600 to 5,000 hours. After the exposure, the alloy surfaces showed compact oxide layers, which resulted in a depleted zone of oxidizing elements in the substrate layer. Using Electron Probe Microanalysis (EPMA), concentration profiles and the extension of the depleted zone were measured. Calculated theoretical profiles were then fitted to the EPMA-measured profiles, using Fick`s second law of diffusion and resolved by a finite difference method and diffusion coefficients as fitting parameters. The diffusion coefficients for chromium may be represented as D = Do exp.(-Q/RT) with the ...
1996-10-01
Investigation of flora and fauna species of Lake Baikal by electron-probe microanalysis
International Nuclear Information System (INIS)
Complete text of publication follows. Baikal is an ancient unique lake. The sweet water of Baikal is crystal clean; it concentrates oxygen and contains scarce silicon. This feature is provoked very particular interest for scientists and poses some awkward questions concerning the preservation of Baikal's ecosystem. A profound investigation of fish otholiths, animal teeth, sponges, valves of mollusks and diatom algae provides chronological information, possibility to reconstruct the events proceeding in the environment based on variations of their chemical composition. Because these study objects are small-sized, and some of them are micron-size, application of the electron-probe microanalysis turns to be quite productive. The goal of this study is to disclose performance capabilities of this method while investigating the Baikal flora and fauna. Investigations were performed by devices JCXA-733 and JXA-8200 using the electron microscope and ...
The state of the ozone layer 1994. Ozonlagets tilstand 1994
Energy Technology Data Exchange (ETDEWEB)
The variations of thickness of the ozone layer over Denmark in the 1978-1994 period based on monthly figures are presented. (CLS)
1994-11-01
UK PubMed Central (United Kingdom)
Gangliosides are amphiphilic molecules found in the outer layer of plasma membranes of all vertebrate...Full Text Available
2011-02-21
Investigation of lattice strains in layered structures containing porous silicon
International Nuclear Information System (INIS)
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous ...
2001-09-23
Launching proton-dominated jets from accreting Kerr black holes: the case of M87
A general relativistic model for the formation and acceleration of lowmass-loaded jets from systems containing accreting black holes is presented. The model is based on previous numerical results and theoretical studies in the Newtonian regime, but modified to include the effects of space-time curvature in the vicinity of the event horizon of a spinning black hole. It is argued that the boundary layer between the Keplerian accretion disk and the event horizon is best suited for the formation and acceleration of the accretion-powered jets in active galactic nuclei and micro-quasars. The model presented here is based on matching the solutions of three different regions: i- a weakly magnetized Keplerian accretion disk in the outer part, where the transport of angular momentum is mediated through the magentorotational instability, ii- a strongly magnetized, advection-dominated and turbulent-free boundary layer (BL) between the outer cold accretion ...
2011-07-01
Efficient PVD-coatings for roller bearings; Leistungsfaehige PVD-Waelzlagerbeschichtungen
Energy Technology Data Exchange (ETDEWEB)
On the basis of cylindrical roller thrust bearings it was systematically examined to what extent PVD-coatings are able to take over the function of EP/AW-additives. The bearings were tested under heavy-duty conditions in order to distinguish very fast the efficiency of different coating-substrate-systems. Several coatings were tested for their ability to protect an un-coated counterpart. So just the washers of the roller bearings were coated, the rollers stayed un-coated. Four Me-C:H-coatings showed the best performance and fulfilled the required criterion for roller bearings in the boundary friction: low loss of mass and hardly surface deviation. Material carryover from the carbonaceous coating to the 100Cr6 steel surface was developed by the Me-C:H-coatings during the tests. This mechanism was able to protect the un-coated rollers. Closer investigations were done with an ESMA analysis (electron beam micro range analysis) on ZrC{sub g}-coatings. It could be seen, ...
2003-11-01
Energy Technology Data Exchange (ETDEWEB)
Dominating factors in plasma nitriding and plasma condition that makes nitriding possible in plasma nitriding process of metals having hard oxide film were studied. In case of stainless steel, oxide film sputtering was easier comparing to nitriding layer. Three phenomena such as sputtering of oxide layer, formation of nitriding layer and sputtering of nitriding layer occurred simultaneously. Nitriding was achieved when the formation of nitriding layer reached the peak comparing to the removal of nitriding layer after the removal of oxide layer. Situations of metallic surface of stainless steel in surface nitriding were divided into four categories and they were, situation where oxide layer remained as it is, situation where nitriding layer was formed although oxide layer remained ...
1994-05-05
Effects of the insertion of a thick sp"2 buffer layer on the adhesion of cBN-rich film
International Nuclear Information System (INIS)
A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 ...
2004-05-01
Energy Technology Data Exchange (ETDEWEB)
A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, ...
1998-06-01
International Nuclear Information System (INIS)
Alloy 800 and Alloy 600 are well known for their resistance to corrosion in an aqueous medium at high pressure and temperature, for which they have been widely used for more than 3 decades in different structural components of water refrigerated nuclear reactors, especially as material for the steam generator tubes (SG) in these nuclear plants. The SG tubes in the Atucha I and Embalse Nuclear Plants are made with Alloy 800. The speed of corrosion of these materials in a reactor's refrigerant medium, while very small is perfectly measurable and can be described by parabolic or logarithmic type kinetics. In other words this speed is high in the first states of growth during the formation of a protective oxide film but then drops to almost stationary values. One characteristic of these films is the formation of a double layer (or duplex): i) an internal adhering layer, of approximately constant thickness, formed by small microcrystals (#<=#0.05 ...
2006-12-01
Energy Technology Data Exchange (ETDEWEB)
This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) ...
1999-04-01
THE INTERPRETATION OF ELECTRON MICROSCOPE ...
... Accession Number : AD0633770. Title : THE INTERPRETATION OF ELECTRON MICROSCOPE FRACTOGRAPHS. Descriptive Note : Final rept.,. ...
1966-01-21
ELECTRON MICROSCOPE STUDIES INTO THE ...
ELECTRON MICROSCOPE STUDIES INTO THE MORPHOLOGY AND LOCALIZATION OF OMSK HEMORRHAGIC FEVER VIRUS IN INFECTED ...
1966-08-01
Status of the WAND (Waste Assay for Nonradioactive Disposal) project as of July 1997
Energy Technology Data Exchange (ETDEWEB)
The WAND (Waste Assay for Nonradioactive Disposal) system can scan thought-to-be-clean, low-density waste (mostly paper and plastics) to determine whether the levels of any contaminant radioactivity are low enough to justify their disposal in normal public landfills or similar facilities. Such a screening would allow probably at least half of the large volume of low-density waste now buried at high cost in LANL`s Rad Waste Landfill (Area G at Technical Area 54) to be disposed of elsewhere at a much lower cost. The WAND System consists of a well-shielded bank of six 5-in.-diam. phoswich scintillation detectors; a mechanical conveyor system that carries a 12-in.-wide layer of either shredded material or packets of paper sheets beneath the bank of detectors; the electronics needed to process the outputs of the detectors; and a small computer to control the whole system and to perform the data analysis. WAND system minimum detectable activities ...
1998-03-01
Energy Technology Data Exchange (ETDEWEB)
The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field-effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa-peri-hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from {sup 1}H NMR and 2D wide-angle X-ray scattering (2D WAXS) experiments that the sterically demanding 9,9-dioctylfluorene groups are preventing {pi}-{pi} intermolecular contact in the hexakis-substituted FHBC 4. For bis-substituted FHBC ...
2010-03-24
International Nuclear Information System (INIS)
Single phase amorphous Al_xHf_1_0_0_-_x alloys with a wide amorphization range (33#<=#x#<=#75) were synthesized by the solid-state interdiffusion of pure polycrystalline Al and Hf powders at room temperature using a rod-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders were investigated by means of X-ray diffraction, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling (0-173 ks) are intermixed to form amorphous phase(s) upon heating to about 980 K by so-called thermally assisted solid-state amorphization (TASSA). The amorphization heat formation for the binary Al_xHf_1_0_0_-_x system via TASSA, #DELTA#H"T"A"S"S"A_a, was measured directly ...
1999-03-04
Long-term durability of dentin bonds made with a self-etching primer, in vivo.
The long-term durability of bonds between adhesive resins and dentin is of significant importance for the longevity of bonded restorations. We carried out an in vivo one-year study to evaluate the durability of resin-dentin bonds in the oral cavity, as well as to test the hypothesis that the adhesive interface would show morphological changes in vivo over time. Very shallow saucer-shaped dentin cavities were prepared in 12 intact teeth of one Japanese monkey (Macaca fuscata) under general anesthesia. The cavities were restored with Clearfil Liner Bond II and Clearfil Photo Posterior resin composite. The teeth were extracted at three different times: immediately, and 180 and 360 days after placement of the restorations. One day after the monkey was killed, specimens of the three time periods were subjected to the micro-tensile bond test at a crosshead speed of 1 mm/min. The surfaces of the failed bonds were observed under a field emission scanning electron ...
1999-04-01
Energy Technology Data Exchange (ETDEWEB)
This thesis is concerned with the crystallisation behaviour of polymers near to a free surface or a buried interface. The properties of polymers are expected to differ significantly near to an interface (either with air or another polymer), due to the contributions of (a) chain configurations induced at the interface, and (b) different mobilities between interfacial regions and the bulk of the sample. For a semi-crystalline polymer, properties such as the degree of crystallinity and the crystallisation kinetics may be enhanced near to a free surface. Grazing incidence x--ray diffraction (GIXD) is used to investigate such effects in poly(ethylene terphthalate) (PET), showing that a lower crystallisation temperature is obtained at the surface, and the crystallisation kinetics are faster at the surface for all temperatures. It is proposed that in thin films of PET, this surface-induced ordering provides nucleation sites for crystallisation in the bulk. GIXD is also used to investigate the ...
2002-07-01
Electron-beam induced RAFT-graft polymerization of poly(acrylic acid) onto PVDF
Energy Technology Data Exchange (ETDEWEB)
This paper explores for the first time the post-radiation-induced-graft polymerization on solid substrate using reversible addition-fragmentation transfer (RAFT) mechanism. Radiation-induced graft polymerization onto polymers is a potentially interesting technique to create easily new materials from highly resistant polymers, e.g. surface graft polymerization of acrylic acid (AA) onto poly(vinylidene difluoride) (PVDF) improves its surface properties without losing its excellent mechanical properties. As a consequence of the radical nature of the polymerization processes it is difficult to control molecular weight of grafted chains, and therefore design and standardize the properties of the final product. RAFT polymerization is a suitable method to obtain monodisperse polymers. The ability of the RAFT agents to control the polymer chain length could be an interesting approach to improve the grafted polymers obtained by post-radiation-induced-graft polymerization technique. In this way, ...
2005-07-01
Corrosion properties of thin molybdenum silicide films
Energy Technology Data Exchange (ETDEWEB)
The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel electrode (SCE). The MoSi{sub 1.9-2.1} films had ...
1997-11-25
Energy Technology Data Exchange (ETDEWEB)
Development of electronic devices with better performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method for embedding these components within a PWB. We have deposited high-permittivity ferroelectric lead lanthanum zirconate titanate (Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub x}, PLZT 8/52/48) films on base metal foils by chemical solution deposition. These prefabricated capacitor sheets can be embedded into PWBs for power electronic applications. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was applied by chemical solution deposition on nickel foil before the deposition of PLZT. With a {approx} 0.7-{micro}m-thick ferroelectric PLZT film grown on LNO-buffered nickel foil, we ...
2009-01-01
International Nuclear Information System (INIS)
Ab initio total energy calculations within the framework of density functional theory have been performed for atomic hydrogen and oxygen chemisorption on the (0001) surface of double hexagonal packed (dhcp) americium using a full-potential all-electron linearized augmented plane wave plus local orbitals method. Chemisorption energies were optimized with respect to the distance of the adatom from the relaxed surface for three adsorption sites, namely top, bridge, and hollow hcp sites, the ad-layer structure corresponding to the coverage of a 0.25 monolayer in all cases. Chemisorption energies were computed at the scalar-relativistic level (no spin-orbit coupling NSOC) and at the fully relativistic level (with spin-orbit coupling SOC). The two-fold bridge adsorption site was found to be the most stable site for O at both the NSOC and SOC theoretical levels with chemisorption energies of 8.204 eV and 8.368 eV respectively, while the three-fold ...
2008-02-01
Radiochemical and Raman spectroscopy study of the nature of adsorbed layers on a silver electrode
International Nuclear Information System (INIS)
The structure of the layers formed on a silver electrode by the adsorption of pyridine, Cl"-, CN"- and SO_4"2"- is discussed. A comparison of the amount of the species adsorbed with their Raman spectra shows that there is no simple relation between the species concentration and the enhancement of the Raman intensity. Furthermore, the inhomogeneity of the layers is shown by Raman microscopy observations. These results lead the authors to propose the formation of a new species stabilized in the colloidal silver layer. The Raman enhancement could be explained by the existence of a resonance effect. (Auth.).
Energy Technology Data Exchange (ETDEWEB)
Governments around the world will soon make decisions on policies that could determine the fate of the ozone layer-the Earth's shield from harmful ultraviolet radiation. The Vienna Convention for the Protection of the Ozone Layer, signed on March 22, 1985, created a framework for scientific cooperation and information exchange that will form the basis for a protocol for controlling substances thought to threaten the ozone layer. As of mid-1987, 29 countries had signed the Convention, including the major producers and users of chlorofluorocarbons (CFCs), the most important of suspect chemicals.
1987-12-01
AN AES/XPS STUDY OF THE CHEMISTRY OF PALLADIUM ...
... AT THE INTERFACE, A THIN OXIDE LAYER IS OBSERVED ALONG WITH POSSIBLE PALLADIUM SILICIDES. PALLADIUM ...
1981-02-01
A structure modeling of metal-silicide layers by using axial and planar channeling techniques
International Nuclear Information System (INIS)
Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).
Ionospheric response to the phenomena occurring below and above it: a summary
Energy Technology Data Exchange (ETDEWEB)
Some of well known F{sub 2} layer anomalies might have their origin in lower atmosphere and some have extra terrestrial sources. It has been suggested that the phenomena occurring below the ionosphere such as thunderstorms, lightning/sprites, volcanic eruptions and earthquakes and above the phenomena like corona mass ejection, solar flares and extra terrestrial events may produce F{sub 2} layer signatures. In the present paper we have tried to summarize the effect of some phenomena occurring below the ionosphere like thunderstorms, lightning/sprites and seismic activity and the phenomena such as solar flares which occur above the ionosphere, on the ionospheric electron and ion temperatures. The paper also discusses possibilities. The ionospheric electron and ion temperatures were measured by the RrPAa payload aboard the Iindian SRrOSS-C2 satellite. The normal day's ion and ...
2009-01-15
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
International Nuclear Information System (INIS)
The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the ...
2005-06-01
Analysis of nonisothermal injection and falloff tests in layered reservoirs
Energy Technology Data Exchange (ETDEWEB)
The effects of reservoir layering and gravity segregation on nonisothermal injection and falloff tests are investigated. Results show that layering does not affect injection or falloff data if all the layers are permeable and accept fluids from the wellbore. In such cases, the average permeability, skin factor, and distance to the thermal front can be calculated using the techniques developed for homogeneous reservoirs. Special considerations have to be taken for cases where several layers are impermeable or are permeable but do not accept fluids of the well face. In the first case (impermeable layers), knowledge of the total thickness of the permeable layers is required for the existing techniques to be applied successfully. In the second case, the existing techniques cannot be applied, but characteristic responses from injection and falloff test are seen; ...
1985-03-01
On combining surface and bulk passivation of SiN{sub x}:H layers for mc-Si solar cells
Energy Technology Data Exchange (ETDEWEB)
A route, as followed by ECN, is described for development of SiN{sub x}:H layers deposited by microwave (MW) PECVD, which are suited for surface and bulk passivation of mc-Si solar cells. First research was focussed on surface passivation and this resulted in the development of SiN layers that were Si-rich and where the hydrogen is mainly bonded to silicon atoms. A disadvantage of such Si-rich layers is their large absorption at shorter wavelengths, which make them unsuitable as front side AR coatings. Further, these layers appeared to be less suitable for bulk passivation. The next step therefore was the development of SiN layers for bulk passivation. For good bulk passivation of solar cells by means of a thermal anneal of the SiN layers, we found that SiN layers with high N-H bonding concentrations are required. Fine-tuning of the ...
2002-05-01
XAFS studies of nanocomposite systems
Nanosized particles are important because of their unique properties, different from the bulk, which leads to their enhanced catalytic, photocatalytic and electronic properties. This work has dealt with three different nanoparticle systems in the context of three different aspects of nanoparticle properties: (a) photocatalytis (TiO2/metal) system, (b) luminescence (CdSe) (c) alloying (Pt-Ag and Pd-Ag). The initial photocatalytic enhancement obtained by adding noble metal on semiconductor nanoparticles, degrades as fast as in 15 minutes and questions their long-term performance. XANES measurements on such irradiated systems like TiO2/Au, TiO2/Pt, TiO2/Ir indicates a positive oxidation state of these noble metals which renders them as recombination centers for photo-excited electrons and explains the decreased photocurrent. The oxidation is caused by holes. The EXAFS results also indicate a change of the interfacial structure under the effect of ...
Magnetic electronic lenses, quadrupole and octupole for microsystem electron beam techniques
International Nuclear Information System (INIS)
The MOS-technology allows to make tiny electronic lenses for multibeam electron systems. In the paper results of research and principles of designing of tiny magnetic electron lenses are submitted. Electronic lenses with a nonconventional configuration of tiny magnetic circuit and electronic lenses with coincident electric and magnetic fields in nonconventional tiny performance are considered
2006-09-01
International Nuclear Information System (INIS)
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt increase in photocurrent ...
2010-02-01
Energy Technology Data Exchange (ETDEWEB)
The motivation of this work is to develop high reflectance normal-incidence multilayer mirrors in the 8-12 nm wavelength region for applications in astronomy and extreme ultraviolet lithography. To achieve this goal, Mo/Sr and Mo/Y multilayers were studied. These multilayers were deposited with a UHV magnetron sputtering system and their reflectances were measured with synchrotron radiation. High normal-incidence reflectances of 23% at 8.8 nm, 40.8% at 9.4 nm, and 48.3% at 10.5 nm were achieved. However, the reflectance of Mo/Sr multilayers decreased rapidly after exposure to air. Attempts to use thin layers of carbon to passivate the surface of Mo/Sr multilayers were unsuccessful. Experimental results on the refractive index {tilde n} = 1-{delta} + i{beta} of yttrium and molybdenum in the 50-1300 eV energy region are reported in this work. This is the first time ever that values on the refractive index of yttrium are measured in this energy range. The absorption ...
2002-09-01
Development of novel brasses to resist dezincification
Energy Technology Data Exchange (ETDEWEB)
The effect of alloying Sn, Pb, As, Sb and P on the dezincification of commercial brass 60Cu-39Zn-1Pb has been investigated in 1% CuCl{sub 2} solution by immersion studies and electrochemical measurements. Specimens with a smooth surface finish exhibited more resistance to dezincification. Appreciable inhibitive effect on dezincification was observed for the 55Cu-40Zn-3Pb-2Sn brass composition. The galvanic coupling of lead phase with the matrix accelerated corrosion. To improve the dezincification resistance of the Sn containing brass, As, Sb and P were added at two different levels (0.05% and 0.1%). Brass of composition 48.95Cu-45Zn-5Pb-1Sn-0.05As was more resistant indicating the synergistic effect of Sn and As. The effect of 0.05 and 0.1% of arsenic addition with various concentrations of zinc was also studied. The alloy of composition 57.90Cu-40Zn-2Pb-0.1As showed better corrosion resistance than the alloy containing 1% Sn and 0.05% As (48.95Cu-45Zn-5Pb-1Sn-0.05As). To understand ...
2007-03-15
Study of the Electron Beam Dynamics in the Fermi @ Elettra Linac
Energy Technology Data Exchange (ETDEWEB)
A study of the electron beam dynamics in the linac is conducted for the FERMI free electron laser (FEL) founded for construction at the Sincrotrone Trieste.
2006-07-19
Study of the Electron Beam Dynamics in the FERMI @ ELETTRALinac
Energy Technology Data Exchange (ETDEWEB)
A study of the electron beam dynamics in the linac is conducted for the FERMI free electron laser (FEL) founded for construction at the Sincrotrone Trieste
2006-06-17
Photon statistics of the free-electron--laser startup
Energy Technology Data Exchange (ETDEWEB)
We show that, for the high electron currents used in present-day free-electron lasers, spontaneous radiation is distributed according to thermal statistics.
1983-09-01
Mathematical Analysis of Three Free-Electron-Laser Issues
... iFfficiency-en- enhanced spontaneous radiation at the free-electron- ... as enhanced spontaneous radiation at the free-electron-laser wavelength. ...
1990-09-30
Electron Microscope Database - GCMD - NASA
Electron Microscope Database. Entry ID: em_database ... Ancillary Keywords. electron microscope. Data Set Progress. IN WORK. Originating Center ...
International Nuclear Information System (INIS)
Layer-by-layer formation for #pi#-conjugated azomethine multilayers bonded on substrates was investigated. The multilayers were synthesized using ethanol (EtOH) and dichloromethane (DCM) as reaction solvents. The multilayer characteristics were analyzed using UV-vis absorption spectroscopy, ellipsometric thickness, and atomic force microscopy. The absorption spectra and ellipsometric thicknesses of multilayers formed using EtOH and DCM were compared. The results indicate that EtOH is more suitable than DCM for such layer-by-layer formation. In addition, bandgaps estimated from the absorption edge of multilayers were investigated. The results indicate that the bandgap decreases as the number of benzene rings contained in the molecular chain of the multilayer increases. Also, a multilayer with four benzene rings bonded on a substrate had a bandgap close to that of a polymer with a similar chemical structure.
2010-07-01
Manganese oxide nanowires, films, and membranes and methods of making
Energy Technology Data Exchange (ETDEWEB)
Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer ...
2008-10-21
Energy Technology Data Exchange (ETDEWEB)
Pulsed DC-plasma nitriding has been applied to form nitride layer having only a diffusion layer. The discharge current with the variation of discharge gases is proportional to the intensity of N{sub 2}{sup +} peak in optical emission spectroscopy during the plasma nitriding. The discharge current, microhardness in surface of substrate and depth of nitride layer increased with the ratio of N{sub 2} to H{sub 2} gas in discharge gases. When the ratio of N{sub 2} to H{sub 2} is lower than 60% in the discharge gases, high microhardness value of 1100Hv nitride layer which contains no compound layer has been formed. (author). 20 refs., 6 figs., 1 tab.
2002-06-01
Characterization and Wear Behavior of Plasma Nitrided Nickel Based Dental Alloy
British Library Electronic Table of Contents (United Kingdom)
In the present work, the plasma nitriding behavior of a nickel based dental alloy was investigated. Plasma nitriding experiments carried out under constant gas mixture (15% H2?85% N2) for different process parameters including time (4, 6, 10, and 20?h) and temperature (400, 450, 500, and 550??C). Depending on nitriding parameters, it was found that triple or double layers formed on the surface of the samples. Increasing of treatment time and temperature has resulted in a double layer. ?N1 layer was in formed all nitrided samples. However, ?N2 layer is formed only at low temperatures and in short times. Layer growth of nickel based alloys increases until a critical time or a critical temperature reached. Above these critical values, it is observed that the layer thickness decreases. It was ...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
The performance of four different organic coating systems applied to carbon and weathering steel coupons has been assessed in this investigation. applied on the surface of carbon steel and weathering steel coupons. The coupons have been evaluated using five different tests, three field tests and two accelerated tests. The field tests were carried out at three atmospheric stations, located at COSIPA in Cubatao-SP, at Alto da Serra in Cubatao-SP and at Paula Souza in Sao Paulo city. The accelerated tests consisted of (a) exposure to alternate cycles of ultraviolet radiation/condensation combined with salt spray cycles (UVCON combined with Salt Spray) and of (b) exposure to alternate cycles of ultraviolet radiation/condensation combined with the Prohesion test. The performance of the coatings was assessed by visual observation and photographs, using a method based on ASTM D-610, ASTM D-714 and ASTM-1654 standards to rank them. The oxide phases formed on the surfaces of the non-coated ...
2002-07-01
[Chemical properties of litter in dark coniferous forest of Sejila Mountains in Tibet].
The storage and chemical properties of the forest litter in dark coniferous forest of Sejila Mountain were studied. The results showed that the existing storage was 5.863 t.hm-2 and the annual litter fall was 0.3205 t.hm-2. It implied that the forest litter decomposed slowly and accumulated quickly, and the turnover of nutrient circles was slow. The contents of N, Ca, Na, and Mn nutrient elements in litter layer were in the order of un-decomposed layer (U layer) > semi-decomposed layer (S layer) > decomposed layer (D layer), those of K, Fe, and Mg were in the order of D layer > S layer > U layer, and P element content was in the order of U layer > D layer > S layer. The pool of elements was 78.483 ...
2004-01-01
International Nuclear Information System (INIS)
... interval analyzers counting techniques discriminators electronic circuits
Regulations | Alternatives / SNAP | US EPA
Jump to main content. [logo] US EPA Ozone Layer Protection - Alternatives / SNAP Recent Additions | Contact Us Search: All EPA This Area Go You are here: EPA Home Ozone Layer...
2011-10-06
UK PubMed Central (United Kingdom)
The purpose of this study was to determine the thickness of the macula and the retinal nerve fiber layer (RNFL) in Japanese subjects by Stratus optical coherence tomography (OCT), and to compare the...Full Text Available
2007-06-01
High bandgap window layer for GaAs solar cells and fabrication process therefor
The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of ...
1979-05-29
UK PubMed Central (United Kingdom)
Hydrolytic exoenzymes as indicators of metabolically active bacteria were investigated in four consecutive sapropel layers collected from bathyal sediments of the eastern Mediterranean Sea. For comparison,...Full Text Available
2000-06-01
UK PubMed Central (United Kingdom)
BackgroundNew technology allows more precise definition of structural alterations of all retinal layers although it has not been used previously in cases of optic...Full Text Available
2008-06-01
First Measurements of the Inclined Boron Layer Thermal-Neutron Detector for Reflectometry
Energy Technology Data Exchange (ETDEWEB)
A prototype detector based on the inclined boron layer principle is introduced. For typical measurement conditions at the Liquids Reflectometer at the Spallation Neutron Source, its count rate capability is shown to be superior to that of the current detector by nearly two orders of magnitude.
2010-01-01
First Measurements of the Inclined Boron Layer Thermal-Neutron Detector for Reflectometry
Energy Technology Data Exchange (ETDEWEB)
A prototype detector based on the inclined absorber layer principle is introduced. For the Liquids Reflectometer at the Spallation Neutron Source, it is shown to be a significant improvement over its current detector, which imposes an instantaneous count rate limitation of 50 kcps.
2008-10-01
Effects of relative thickness of the duplex-treated layer on surface properties of AlSl H13 steel
Energy Technology Data Exchange (ETDEWEB)
A duplex surface treatment technique based on calorizing and plasma nitriding was developed to improve the wear and oxidation resistance of H13 steel at high temperatures. The effects of the relative thickness of the calorized layer to the depth of plasma nitriding on the wear and oxidation properties at temperatures up to 900 C were investigated in this work. High-temperature wear tests were performed at 500 C with dry conditions in open air using a ball-on-disk type tribotest machine. Isothermal oxidation tests were performed at 900 C for up to 100 h under controlled atmosphere. The results indicated that the specimens with a calorized layer as an intermediate phase between the surface duplex layer and the base metal showed higher wear and oxidation resistance than the specimens with a nitrided layer alone. During exposure to elevated temperatures, the aluminum in the calorized ...
1997-10-01
UK PubMed Central (United Kingdom)
PurposeTo determine the effects of age on global and sectoral peripapillary retinal nerve fiber layer (RNFL), macular thicknesses and optic nerve head (ONH) parameters...Full Text Available
2009-06-01
Comparative aspects of cortical neurogenesis in vertebrates
UK PubMed Central (United Kingdom)
The mammalian neocortex consists of six layers. By contrast, the reptilian and avian cortices have only three, which are believed to be equivalent to layers I, V and VI of mammals. In mammals, the majority...Full Text Available
2007-08-01
Scratch and Corrosion Resistance of an Aluminum Flange with an Electron Beam Modified Seal Edge
Scratch and Corrosion Resistance of an Aluminum Flange with an Electron Beam Modified Seal Edge
2011-01-01
Role of the #DELTA#(1232)-resonance at the systematic reduction of magnetic isovector transitions
International Nuclear Information System (INIS)
... electron reactions electrons excitation inelastic scattering m1-transitions proton
Request for an Analytical Transmission Electron Microscope.
... Accession Number : ADA189111. Title : Request for an Analytical Transmission Electron Microscope. Descriptive Note : Final rept. ...
1987-10-16
Particle-Sizing System for Scanning Electron Microscope ...
... THESIS PARTICLE-SIZING SYSTEM FOR SCANNING ELECTRON MICROSCOPE IMAGES OF SOLID-PROPELLANT COMBUSTION EXHAUST ...
1991-03-01
... attachment tube which is sketched in Fig. 1. It is mounted inside a cylindrical evacuated tube. A beam of thermal electrons ...
1961-06-20
A bright field scanning transmission electron microscope (STEM ...
A bright field scanning transmission electron microscope (STEM) micrograph showing a Wassonite grain in dark contrast. ...
International Nuclear Information System (INIS)
The fundamental optical absorption of ion crystals characterizes the creation of different free low energetic electronic excitation (the excitons and electron-hole pairs), but their straight registration is not possible because of incommensurable big absorption factor of alkali halide monocrystals. So to registration the spectrums of alkali halide monocrystal very fine layers are necessary. We have received fine films of Nal and KCl in system of KCl-Nal-KCl, KCl-KI-KCl on the base of universal vacuum post VUP-4, VUP-5 by thermal evaporation. A unique spectral unit has been created For this on the basic the SDL-2 complex. Complex consists of radiator, systems of condensers, monochromators MDR-12 and MDR-23, receivers of radiation, controller by unit. Connect and control of monochromators by means of IBM-compatible computer has been created. Kinematics schemes of monochromators provide consequent removing on output slot of ...
Tactile Instrument for Aviation
... electrocutaneous stimuli, and the nerve fibres innervating ... layer or at the epidermal-dermal interface. ... 2) Vestibular prosthesis and for limb prosthesis ...
2000-07-30
The results of a study conducted by Working Group 10 of the AGARD Fluid Dynamics Panel to investigate the limits of boundary layer methods, both the integral and field type formulations, for calculating three-dimensional turbulent separated flow are presented. Test cases used to assess the boundary layer calculations included the DFLVR prolate spheroid at angle of attack and the NASA-Ames Wing C. Comparisons between boundary layer calculations and experimental data are presented for these test cases along with observations, conclusions, and recommendations.
1990-05-01
Recovery of cesium in the hydrogen negative ion sources
Energy Technology Data Exchange (ETDEWEB)
Cesium recovery from the polluted layers in the 1/3 scale hydrogen negative ion source for LHD-NBI system has tested. It was found, that the cesium recovery can be produced by additional discharges as from the cesium layer, aged by tungsten and residual gas, so as from the cesium layers, polluted by an occasional water leak. The highest cesium recovery to NI production was produced by a xenon arc, while glow discharge and arcing in hydrogen were less effective. The mechanism of recovery is the ejection of cesium from the underlying enriched layer by the arc and its transport to the surface. (author)
1999-12-01
Principles of air pollution meteorology
Energy Technology Data Exchange (ETDEWEB)
This book is divided into the following chapters: the atmospheric boundary layer; atmospheric diffusion; pollutants and their properties; and environmental monitoring and impact.
1990-01-01
Plasma nitriding of Ck 15 steel
International Nuclear Information System (INIS)
With the aim of optimizing the nitriding process parameters (temperature and gas mixture ) experimental studies of the plasma nitriding of Ck 15 steel were carried out, using a D. C. glow discharge. Nitriding treatments were performed at 450, 500 and 550 and N_2/H_2 volume ratio of 3/1, 1/1 and 1/3 for 5 hours. Nitriding treatment produces modified surface layer consisting of an outer compound layer and an inner diffusion layer.The plasma nitriding of Ck 15 produce single white layer consisting of #gamma#-(Fe_4N).
2003-08-25
Integrated Reconfigurable Intelligent Systems (IRIS) for ...
... They comprise of a power model for the representation of the electric system, a fluid model that represents the cooling fluid flow, three layers of ...
2009-10-31
British Library Electronic Table of Contents (United Kingdom)
There is investigated the role of polymer layers on the metal surface of a fine filler in the formation of a PVC system with electrophysical properties. It is shown that a physicochemical polymer modification takes place under the surface active center influence. Thus, the surface layer properties (density and geometrical characteristics) differ from the PVC ones. The correlation between the electrophysical properties of the PVC composite and the surface layer in the range of the fine copper fraction of 0?11.3 vol % at E ? 106 V m?1 and a frequency response of 20?2 ? 105 Hz is determined. An explanation of the investigated relation is presented.
2008-01-01
Evaluation of Daytime Boundary Layer Heights from a ...
... the vertical beam measures the movement of the ... be measured because the particle velocity in ... During precipitation, if the hydrometeor fall velocity is ...
2008-03-01
Conjugate parallel-flowing free and forced convection boundary layers on vertical wall sides
Energy Technology Data Exchange (ETDEWEB)
The paper describes an analytical study of two parallel-flowing boundary layers of free and forced convection modes on the facing sides of a vertical thin wall. The two layers are analyzed separately within the framework of boundary layer theory, and coupled by the matching conditions at wall. Numerical data are obtained for a wide range of a dimensionless conjugation parameter {zeta} relating the heat transfer effectiveness of two convection modes. Based on these data, an expression for calculating the conjugate mean Nusselt number as a function of {zeta}-parameter is found by means of a curve-fitting method. (orig.)
2003-02-01
Variosorb - advanced gas sorption with powder sorbent technology
Energy Technology Data Exchange (ETDEWEB)
In contrast to plants based on formed coal where, for the purposes of calculating sorbent volume, only one activated charcoal design can be used in a filter layer, powder sorbent technology enables two variations to be used. This can be either a mixture of a number of different activated charcoal forms in one and the same filter layer, or the combination of a number of filter layers on top of each other, each containing a different activated charcoal form, in one and the same construction unit.
1983-01-01
Transition of hydrated oxide layer for aluminum electrolytic capacitors
Energy Technology Data Exchange (ETDEWEB)
A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.
2007-03-25
Energy Technology Data Exchange (ETDEWEB)
In order to investigate the role of amorphous SiO{sub 2} particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO{sub 2} was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of {gamma}-phase and amorphous nano-SiO{sub 2} particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO{sub 2} particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite ...
2008-04-30
International Nuclear Information System (INIS)
In order to investigate the role of amorphous SiO2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of ?-phase and amorphous nano-SiO2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was ...
2008-04-30
Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing
Energy Technology Data Exchange (ETDEWEB)
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
2006-05-15
Evaluation of adhesive plasters by radionuclide X-ray fluorescence analysis
International Nuclear Information System (INIS)
A radiometric method was elaborated for surface density determinations of the adhesive layer of plasters by radionuclide X-ray fluorescence using the 17.47 keV bremsstrahlung of "1"4"7Pm/Mo. The bremsstrahlung line excites the 8.63 keV characteristic K#alpha# line of Zn contained in the adhesive layer of the plaster as a filling material in the form of ZnO. In homogeneous adhesive layers the Zn content is proportional to surface density. (author).
1976-01-01
Electrically injected visible vertical cavity surface emitting laser diodes
Energy Technology Data Exchange (ETDEWEB)
Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.
1994-09-27
Polycrystalline powders of Na{sub 2x}Mn{sub 1-x}PS{sub 3} have been synthesized from layered MnPS{sub 3} material by successive ion-exchange intercalation of potassium and sodium ions. Their x-ray photoelectron spectroscopy (XPS) and x-ray excited Auger spectroscopy spectra have been measured at room temperature using Mg K{alpha} (1253.6 eV) x-ray source. In particular, the Mn, P, and S 2p and Na 1s and 2p core-level regions and the Na Auger KL{sub 23}L{sub 23} transition have been investigated. All the analyzed XPS core-level spectra display a single-peak structure, suggesting the absence of nonequivalent atoms of Na, Mn, P, and S. The manganese XPS spectrum shows, as observed in MnPS{sub 3} and in its cesium and potassium intercalation compounds, typical shake-up satellites, suggesting that the Mn-S bond is yet mainly ionic in nature. The comparison with the XPS spectra relative to MnPS{sub 3} and its potassium intercalation compound (K{sub 2x}Mn{sub 1-x}PS{sub ...
2008-12-15
Transient enhanced diffusion from decaborane molecular ion implantation
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of ...
1998-10-01
Transient enhanced diffusion from decaborane molecular ion implantation
International Nuclear Information System (INIS)
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms ...
1998-10-01
International Nuclear Information System (INIS)
Full text: It was recently-established for hexagonal barium ferrite-industrially important magnetically hard material that refinement of the crystallite dimensions into the nanoscale regime, typically #<=# 10 nm, leads after heat treatment at temperatures 800-1000 deg C to significant coercivity increase of up to 6.5 kOe (#approx#3-4 times) with saturation magnetisation values of 50-55 emu/g (#approx#95% of bulk at room temperature). High-energy mechanochemical processing has been applied to prepare nanostructural (nanocrystalline-amorphous) composites. High resolution electron microscopy studies reveal that the enhancement of the final magnetic properties was due to formation of magnetically noninteracting #approx#l,#mu#m Ba-ferrite particles with 5-10 nm amorphous surface layer - depending on annealing parameters. Similar situation was established also for ball milled strontium ferrite (SrFe_1_2O_1_9) powders where short annealing 4 h at ...
Energy Technology Data Exchange (ETDEWEB)
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an ...
1999-06-01
International Nuclear Information System (INIS)
Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an ...
1999-06-01
International Nuclear Information System (INIS)
Reactive Magnetron Sputtering is a complex process and huge efforts are made addressing the understanding of its fundamental phenomena and the simulation of the deposition process by e.g. Particle in Cell/Monte Carlo (PIC/MC). One of the most uncertain parameters in this reactive sputtering process is the incorporation coefficient of the reactive gas in the growing layer, i.e. the real-time sticking coefficient during deposition. In this work, mass spectrometry is used to deliver more insights on this complex matter. Earlier, a method was developed to determine the incorporation coefficient of the reactive gas molecules in the growing metal film, using mass spectrometry combined with thin film analysis techniques (electron probe microanalysis and x-ray photoelectron spectroscopy). This method delivers a global, realistic incorporation coefficient which can be used in models for the reactive sputtering process. In this work, new insights have ...
2009-12-31
Passivity of polycrystalline NiMnGa alloys for magnetic shape memory applications
Energy Technology Data Exchange (ETDEWEB)
The corrosion and passivation behaviour of bulk polycrystalline martensite Ni{sub 50}Mn{sub 30}Ga{sub 20} and austenite Ni{sub 48}Mn{sub 30}Ga{sub 22} alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly ...
2009-05-15
Passivity of polycrystalline NiMnGa alloys for magnetic shape memory applications
International Nuclear Information System (INIS)
The corrosion and passivation behaviour of bulk polycrystalline martensite Ni50Mn30Ga20 and austenite Ni48Mn30Ga22 alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly alkaline solutions (pH 5-11) both alloys ...
2009-05-01
Energy Technology Data Exchange (ETDEWEB)
The electrochemical dissolution behaviour of armco-iron and of the steels C15, C45, C60 and 100Cr6 in concentrated sodium chloride media has been investigated. Anodic metal dissolution experiments have been carried out using the flow channel cell (parallel plate reactor), the rotating cylinder electrode (RCE) and the capillary cell. The microstructure of the steel has been varied through variation of carbon content and heat treatment (e.g. soft annealed with globular carbides or pearlitic). Current-efficiency values have been obtained by gravimetric measurements in the current-density range from i=5 to 60 A/cm{sup 2}. For the soft annealed steels, the divalent ferrite dissolution in combination with electroless cementite removal dominates. For the pearlitic steels, the occurrence of oxygen evolution electronically conductive metal carbides or trivalent ferrite dissolution, depending on the current density applied, was detected. Microstructure dependent ...
2002-10-01
Energy Technology Data Exchange (ETDEWEB)
Elastic and elasto-plastic modelling of indentation in CFRP cross-ply laminates has been performed. Detailed knowledge of the field solutions in the volume below the indentor forms the basis for the reported micromechanical interpretation of the observed damage in test specimens. The analysis shows that matrix cracks originate at sites of maximum tensile stress perpendicular to fibers. The predicted stress fields due to indentation show that stress concentrations occur in the interface between alternating plies. It is found that microcracking in this zone is a precursor to the observed failure. This analysis is supported by in-situ scanning electron microscopy during loading by a cylindrical indentor onto the laminate supported on a rigid substrate. The microscopy reveals microdamage in the region of interfacial tensile stress concentrations. The onset of indentation failure in these layered composites suggests that plastic interleaves would ...
1997-08-01
International Nuclear Information System (INIS)
For higher U-loading in low-enriched U-10 wt.%Mo fuels, monolithic fuel plate clad in AA6061 is being developed as a part of Reduced Enrichment for Research and Test Reactor (RERTR) program. This paper reports the first characterization results from a monolithic U-10 wt.%Mo fuel plate with a Zr diffusion barrier that was fabricated as part of a plate fabrication campaign for irradiation testing in the Advanced Test Reactor (ATR). Both scanning and transmission electron microscopy (SEM and TEM) were employed for analysis. At the interface between the Zr barrier and U-10 wt.%Mo, going from Zr to U(Mo), UZr_2, #gamma#-UZr, Zr solid-solution and Mo_2Zr phases were observed. The interface between AA6061 cladding and Zr barrier plate consisted of four layers, going from Al to Zr, (Al, Si)_2Zr, (Al, Si)Zr_3 (Al, Si)_3Zr, and AlSi_4Zr_5. Irradiation behavior of these intermetallic phases is discussed based on their constituents. Characterization of ...
2010-07-01
Manipulation of spin reorientation transition by Au capping in body-centered cubic Ni(001) film
International Nuclear Information System (INIS)
The thickness dependent magnetic properties of artificially prepared ultrathin body-centered cubic Ni films have been explored using the all electron full potential linearized augmented plane wave (FLAPW) method. We have considered two types of BCC Ni(001) films: (i) pure BCC Ni(001) and (ii) Au capped BCC Ni(001) in the range from 1 monolayer (ML) to 4 ML of Au capping coverage. The average magnetic moment of pure BCC Ni(001) is about 0.63 #mu#_B and a typical surface enhancement is found with a magnetic moment of 0.78 #mu#_B. In the presence of an Au capping layer, the magnetic moment of interface Ni is strongly suppressed to approximately 0.5 #mu#_B and this causes a reduction of average magnetic moment. Nevertheless, the Au adlayer has no meaningful induced magnetic moment. The BCC pure Ni(001) films always have in-plane magnetization up to 11 ML, but very interestingly the Au/Ni(001) shows a thickness dependent spin reorientation ...
2008-12-03
Investigating the formation mechanism of soot-like materials present in blast furnace coke samples
An attempt to gain an understanding of the formation mechanism of these 'soot-like' materials has been made by means of tracing the changes in the molecular-mass distribution and molecular structure of the NMP-extractable materials from an injectant coal as well as its partially gasified chars and its pyrolytic tars. Variations in the SEC chromatograms provide clues about changes in the apparent molecular-mass distributions of these NMP extracts. Results suggest that the build-up of 'soot-like' materials follows from the secondary reactions of tars evolved from the injectant coal. The likely secondary-reaction pathways have been probed by collating structural information on these NMP extracts. The time-resolved 13-16 and 22-25 min elution fractions from the SEC column have been characterized using UV fluorescence (UV F) spectroscopy. Greater concentrations of larger aromatic ring systems are found present in samples formed under conditions appearing ...
2008-09-15
Focused ion beam assisted three-dimensional rock imaging at submicron scale
Energy Technology Data Exchange (ETDEWEB)
Computation of effective flow properties of fluids in porous media based on three dimensional (3D) pore structure information has become more successful in the last few years, due to both improvements in the input data and the network models. Computed X-ray microtomography has been successful in 3D pore imaging at micron scale, which is adequate for many sandstones. For other rocks of economic interest, such as chalk and diatomite, submicron resolution is needed in order to resolve the 3D-pore structure. To achieve submicron resolution, a new method of sample serial sectioning and imaging using Focused Ion Beam (FIB) technology has been developed and 3D pore images of the pore system for diatomite and chalk have been obtained. FIB was used in the milling of layers as wide as 50 micrometers and as thin as 100 nanometers by sputtering of atoms from the sample surface. The focused ion beam, consisting of gallium ions (Ga+) accelerated by potentials of up to 30 kV and ...
2003-05-09
International Nuclear Information System (INIS)
Thermo-reactive diffusion chromizing followed by pulsed plasma nitriding were carried out on AISI 52100 and 8620 bearing steels. The chromized samples were pulse-plasma nitrided for 5 h at 500 deg. C in various N_2-H_2 gas mixtures. The coated steels were characterized using scanning electron microscopy, X-ray diffraction and microhardness testing. The unlubricated wear behaviors of only chromized and duplex treated steels were investigated in ball-on-disc system tests at room temperature. X-ray diffraction patterns of the duplex treated samples containing H_2 indicated the formation of dominant CrN and Cr_2N nitrides as well as the formation of Cr_3C_2 and Cr_7C_3 carbides. Gas mixtures in the plasma nitriding, which was performed after chromizing, have a significant influence on the wear rate of the duplex treated steels. The wear and friction tests showed that the lowest friction coefficient and wear rates were observed for the samples duplex treated in a 50%N_2 ...
2008-12-01
Defect engineering via ion implantation to control B diffusion in Si
International Nuclear Information System (INIS)
The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the benefit of the cavity ...
2009-03-15
Energy Technology Data Exchange (ETDEWEB)
The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT ...
2007-08-15
Energy Technology Data Exchange (ETDEWEB)
This dissertation is concerned with the development, experimental diagnostics and mathematical modelling and simulation of polymer electrolyte fuel cells (PEFC). The central themes throughout this thesis are the closely interlinked phenomena of mass and charge transfer. In the face of developing a PEFC system for vehicle propulsion these phenomena are scrutinized on a broad range of relevant scales. Starting from the material related level of the membrane and the gas diffusion layer (GDL) we turn to length scales, where structural features of the cell additionally come into play. These are the scale of flow channels and ribs, the single cell and the cell stack followed by the cell, stack, and system development for an automotive power train. In Chapter 3 selected fundamental material models and properties, respectively, are explored that are crucial for the mathematical modelling and simulation of PEFC, as needed in some succeeding parts of this work. First, ...
2007-07-01
Three dimensional shock wave/boundary layer interactions
British Library Electronic Table of Contents (United Kingdom)
An investigation into a three-dimensional, curved shock wave interacting with a three-dimensional, curved boundary layer on a slender body is presented. Three different nose profiles mounted on a cylindrical body were tested in a supersonic wind tunnel and numerically simulated by solving the Navier?Stokes equations. The conical and hemispherical nose profiles tested were found to generate shock waves of sufficient strength to separate the boundary layer on the cylinder, while the shock wave generated by the ogival profile did not separate the boundary layer. For the separated flow, separation was found to occur predominantly on the windward side of the cylinder with the lee-side remaining shielded from the direct impact of the incident shock wave. A thickening of the boundary layer on the...
2011-01-01
Properties of low residual stress silicon oxynitrides used as a sacrificial layer
Energy Technology Data Exchange (ETDEWEB)
Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.
2000-01-04
Role of unsaturated soil in a waste containment system
Energy Technology Data Exchange (ETDEWEB)
The role of the unsaturated properties of sand as a drainage layer in a composite liner system for landfills is investigated. The effect of the unsaturated properties of coarse-grained soil on contaminant migration was evaluated by means of a series of simulations using a one-dimensional model of a two- and a three-layer soil liner system for advection and diffusion, respectively. The results showed that under seepage conditions, the effect of an unsaturated sand layer on the advancement of the concentration front was quite insignificant. The arrival time of the C/C{sub o} = 0.5 concentration front increased from 651 days for the case with no sand layer to approximately 951 days for the case with a 1.0-m sand layer. A steady-state flow condition was ultimately established in the sand, and this fact suggests that the capillary action might not be effective. For diffusion, the arrival ...
1996-12-31
Plasma nitriding of pure iron and stainless steel. Juntetsu oyobi stainless ko no plasma chikka
Energy Technology Data Exchange (ETDEWEB)
As for surface treatment of steel, the ion nitriding method has a lot of advantages and is practically used, while the plasma nitriding is known as a method which is faster in nitriding than the ion nitriding method. However, there are few reports and many unclear points on the plasma nitriding method. In this study, the plasma nitriding of pure iron and SUS304 is conducted using r.f. nitrogen plasma glow discharge to examine composition of the nitrided layers, microstructures, nitriding rate, etc. Moreover, by exposing the specimen once nitrided to H2 plasma, a phenomenon that nitrogen comes out of the specimen surface is examined. It is found from the result that the nitrided layer is divided into a compound layer and a diffusion layer in order from the surface, that in case of pure iron, the compound layer grows predominantly at a low temperature, and the diffusion ...
1992-11-25
International Nuclear Information System (INIS)
Atoms in very high Rydberg states, 100 approx-lt n approx-lt 1100, are used to investigate electron-molecule interactions at electron energies extending down to a few microelectronvolts. At such energies the cross section for electron capture by CCl_4 is observed to vary inversely with electron velocity, indicative of an s-wave process. Studies with the polar target CH_3Cl suggest that dipole-supported states may be important in inelastic electron-polar molecule scattering at very low electron energies.
X-ray dosimetry of TlGaSe_2 single crystals
International Nuclear Information System (INIS)
TlGaSe_2 compound belongs to group of layered semiconductors of A"3B"3C_2"6-type. Photoelectric and optical properties of TlGaSe_2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe_2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe_2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K_#sigma# characterising X-ray sensitivity of investigated crystals are determined ...
UK PubMed Central (United Kingdom)
An e.p.r. spectrum of the reduced form of the electron-transport component (X), thought to be the primary electron acceptor of Photosystem I, was obtained. By using line-shape simulations of this component...Full Text Available
1978-02-15
Polaron model of electron spectra and superconductivity of A-15 compounds
Energy Technology Data Exchange (ETDEWEB)
The existence of a narrow peak of electron state density in A-15 is explained by a strong electron-phonon interaction that brings about the polaron narrowing of zone. In the supposition of weak and intermediate bond, the analytical expression for the critical transition temperature is found that corre lates Tsub(c) with phonon spectrum. The model permits to explain Tsub(c) correlation with the number of electrons per atom, temperature direction of resistance, value and temperature dependence of magnetic susceptibility and electron thermal capacity.
1983-02-01
Polaron model of electron spectra and superconductivity of A-15 compounds
International Nuclear Information System (INIS)
The existence of a narrow peak of electron state density in A-15 is explained by a strong electron-phonon interaction that brings about the polaron narrowing of zone. In the supposition of weak and intermediate bond, the analytical expression for the critical transition temperature is found that corre lates Tsub(c) with phonon spectrum. The model permits to explain Tsub(c) correlation with the number of electrons per atom, temperature direction of resistance, value and temperature dependence of magnetic susceptibility and electron tehrmal capacity.
Pair formation in two-electron correlated chains
Energy Technology Data Exchange (ETDEWEB)
We study two correlated electrons in a nearest-neighbour tight-binding chain, with both on-site and nearest-neighbour interaction. Both the cases of parallel and antiparallel spin are considered. In addition to the free electron band for two electrons, there are correlated bands with positive or negative energy, depending on whether the interaction parameters are repulsive or attractive. Electrons form bound states, with amplitudes that decay exponentially with separation. Conditions for such states to be filled at low temperatures are discussed.
2003-05-21
MAGNETIC ELECTRON MICROSCOPE UEMB-100
A new magnetic electron microscope, UEMB-100, was designed with an increased electron-optical parameter. The electron-optical system consists of an electron canon (the high voltage is supplied by armored lead) and condensed, objective, intermediate, and projection lenses. In contrast to other native apparatuses, the microscope has a high resolving property (up to 20A) snnd great universality. (tr-auth)
1958-07-01
In-beam conversion electron spectroscopy using the SACRED array
International Nuclear Information System (INIS)
Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs.
Electron accelerator unit for electron beam therapy
Energy Technology Data Exchange (ETDEWEB)
An electron accelerator unit is described for electron beam therapy, comprising: a source of an electron beam; means for finally directing at least a portion of the beam to a therapy site, the directing means being mechanically independent of, and electrically isolated from, the source, and having a target area; and means for aligning the source with the directing means, the aligning means comprising means for projecting at least one beam of light from the source toward the target area.
1987-01-27
Electron accelerator unit for electron beam therapy
International Nuclear Information System (INIS)
An electron accelerator unit is described for electron beam therapy, comprising: a source of an electron beam; means for finally directing at least a portion of the beam to a therapy site, the directing means being mechanically independent of, and electrically isolated from, the source, and having a target area; and means for aligning the source with the directing means, the aligning means comprising means for projecting at least one beam of light from the source toward the target area.
Current results from the Texas A and M electron beam ion source
International Nuclear Information System (INIS)
The electron beam ion source (EBIS) at Texas A and M University was constructed and is currently undergoing tests on the injection and transmission of the electron beam through the solenoid. Results of computer simulation of the electron beam are presented, as well as measurements of electron beam profiles using a pinhole beam analyzer.
A novel application of the multi-group method: Coupled neutron-gamma-electron cross-section library
Energy Technology Data Exchange (ETDEWEB)
A multi-group neutron-gamma cross-section library in DTF-IV format is supplemented with electron production matrix to generate a coupled neutron-gamma-electron library. This is realized by estimating the contributions from Compton scattering, pair production and photoelectric effect to the electron production cross-sections. A novel application of this new library, which involves transport of neutrons, gammas and electrons, for estimating the Compton current due to a pulse of radiation in air is discussed.
2006-02-15
A novel application of the multi-group method: Coupled neutron-gamma-electron cross-section library
International Nuclear Information System (INIS)
A multi-group neutron-gamma cross-section library in DTF-IV format is supplemented with electron production matrix to generate a coupled neutron-gamma-electron library. This is realized by estimating the contributions from Compton scattering, pair production and photoelectric effect to the electron production cross-sections. A novel application of this new library, which involves transport of neutrons, gammas and electrons, for estimating the Compton current due to a pulse of radiation in air is discussed.
2006-02-01
Relevance of mixed layer scaling for daytime dispersion based on RAPS and other field programs
Energy Technology Data Exchange (ETDEWEB)
A brief review and assessment of field measurement programs that provide data for mixed layer diffusion research is presented. The majority of programs emphasize either the meteorological aspects of the mixed layer or plume characterization. Few programs are available that provide the complimentary blend of plume and appropriate meteorological measurements needed to adequately validate mixed layer diffusion theory. Three major U.S. EPA (Environmental Protection Agency) field programs that provide data bases for model development and validation of mixed layer diffusion processes are described and discussed in more detail. The Regional Air Pollution Study (RAPS) focused on measurements of surface and mixed layer turbulent transport processes in the urban environment. The Tennessee Plume Study (TPS) obtained a database with coincident measurement of boundary layer ...
1983-01-01
UK PubMed Central (United Kingdom)
Photosynthetic (Ps) electron transport pathways often contain multiple electron carriers with overlapping functions. Here we focus on two c-type cytochromes (cyt) in facultative phototrophic...Full Text Available
2008-05-16
Investigation of the hadronic final state in electron-proton interactions at HERA
Energy Technology Data Exchange (ETDEWEB)
The main subject of this thesis is the study of the hardronic final state in deep-inelastic electron-proton scattering. Theexperiment described in this thesis is performed with such a high resolution that the substructure of the proton is probed by the electron beam with a resolution of less than 10{sup -15} cm. (orig./HSI).
1995-09-18
Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers
International Nuclear Information System (INIS)
We have developed a chemical process for incorporating copper into indium gallium selenide layers with the goal of creating a precursor structure for the formation of copper indium gallium diselenide (CIGS) photovoltaic absorbers. Stylus profilometry, EDX, Raman spectroscopy, XRD and SIMS measurements show that when indium gallium selenide layers are immersed in a hot copper chloride solution, copper is incorporated as copper selenide with no increase in the thickness of the layers. Further measurements show that annealing this precursor structure in the presence of selenium results in the formation of CIGS and that the supply of selenium during the annealing process has a strong effect on the morphology and preferred orientation of these layers. When the supply of Se during annealing begins only once the substrate temperature reaches ? 400 deg. C , the resulting CIGS layers are ...
2009-02-02
Reactor fuel cladding tube with excellent corrosion resistance and method of manufacturing the same
International Nuclear Information System (INIS)
The present invention provides a fuel cladding tube having an excellent corrosion resistance and thus a long life, and a suitable manufacturing method therefor. Namely, in the fuel cladding tube, the outer circumference of an inner layer made of a zirconium base alloy is coated with an outer layer made of a metal more corrosion resistant than the zirconium base alloy. Ti or a titanium alloy is suitable for the corrosion resistant metal. In addition, the outer layer can be coated by a method such as vapor deposition or plating, not limited to joining of the inner layer material and the outer layer material. Specifically, a composite material having an inner layer made of a zirconium alloy coated by the outer material made of a titanium alloy is applied with hot fabrication at a temperature within a range of from 500 to 850degC and at a fabrication rate of not ...
1993-07-14
Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys
Energy Technology Data Exchange (ETDEWEB)
In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We ...
2010-07-01
Hydrogen behavior in the iron surface layer modified by plasma nitriding and ion boronising
Energy Technology Data Exchange (ETDEWEB)
The effects of the plasma nitriding with the formation of compound nitride and diffusion zones and of the boronising with the different ion doses on hydrogen distribution and hydrogen induced deterioration of a surface layer were examined in the case of Armco iron. Electrochemical studies of hydrogen permeation rate, hydrogen vacuum extraction measurements, optical and scanning microscopy, X-ray diffraction and elastic recoil detection analysis (ERDA) were used. Accumulation of entering hydrogen within the various constituent zones of the modified layer inhibits the hydrogen transport into the metal and thus, decreases the mean hydrogen content in the deeper zones and in the core. Hydrogen accumulation within the compact nitride zone causes the expansion of the nitride lattice, nitride phase transformation and deterioration. The ion boronising enhances the hydrogen effects in the plasma nitrided layers. Therefore, ...
2000-12-01
Energy Technology Data Exchange (ETDEWEB)
It has been clarified by the present authors, based on the plasma nitriding of Fe-Cr alloys and Fe-Ti alloys carried out at the temperature under 550{degree}C hitherto, that an internal nitriding layer is formed due to the fine dispersion of the particles of Cr nitride and Ti nitride in {gamma}{prime} Fe4N layer on the specimen surface. In this study, the plasma nitriding of Fe-Cr alloys are carried out at 650{degree}C, and the effects of the solute (Cr) content on the structures, nitride and the thickness distribution are examined. The main results obtained therefrom are indicated hereafter. In accordance with the observation on the cross-sectional structure of the alloys, only the nitriding layer deduced as the dispersion and precipitation of the particles of Cr nitride from {alpha}-Fe of the mother phase is formed, while {gamma}{prime}-Fe4N layer, which is found at the temperature under 550{degree}C, ...
1996-03-15
International Nuclear Information System (INIS)
A highly reliable screening method was developed for the determination of lead in tin plated layers and tin-bismuth plated layers. The contents of lead in the layers of the various samples were determined by inductively coupled plasma optical emission spectrometry. The calibration curve for lead in the tin and tin-bismuth plated layers by using WD-XRF exhibited linear correlation from 130 #mu#g/g to 2070 #mu#g/g. Calibration curve of lead normalized with Pb-L#alpha#/Sn-K#alpha# intensity was more linear, and this method was possible to evaluate very small sample. The calibration curve for lead in the tin plated layers by using ED-XRF was good linearly, but it for lead in the tin-bismuth plated layers was affected by Pb-L#alpha# spectrum and Bi-L#alpha# spectrum overlap each other. It was effective for decreasing affect of Bi-L#alpha# spectrum by using curve ...
2009-03-01
We study the emission zone in a single-layer polymer light-emitting diode. The emission zone is found by studying the angular distribution of the electroluminescence. The emission is modeled by accounting for optical interference. We account for birefringence of the anode layer in our model. The active polymer was, however, found to be isotropic. The anode consists of a single-layer of the conducting polymer complex poly(3,4-ethylenedioxythiophene) and poly(styrene sulfonate) (PEDOT-PSS), with enhanced conductivity. As a cathode we use plain aluminum. By using only PEDOT-PSS we avoid having a thin metal layer or indium-tin-oxide as the anode in the path of the escaping light. The active material is a substituted polythiophene with excellent film forming properties. A comparison between the experimental and calculated angular distribution of light emission from a single-layered ...
2001-06-01
Energy Technology Data Exchange (ETDEWEB)
Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm{sup -3} HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films ...
2009-07-15
International Nuclear Information System (INIS)
Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm-3 HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly ...
2009-07-01
Approximate analysis of non-uniform gas flow through layered burdens
Energy Technology Data Exchange (ETDEWEB)
An approximate analyzing model was developed to predict the azimuth of zigzag streamline, the distribution ratio between two neighboring layers and the radial distribution among the layers of the gas passing through the shaft of blast furnace loaded in layers. The theoretical basis of the approximate analysis is composed of the material balance derived from the assumption that any stream line surrounded with two streamlines is isolated and no material transfer occurs through the tube wall, and of the energy theory that the stream tube and passage are formed so that the total pressure drop in the whole system is the minimum. The effects of the apparent angle of repose between two layers, the packing volume and the passage resistance on the non-uniform flow in the layer were evaluated on the basis of the model. The result calculated by the approximate analysis agrees with the result ...
1988-02-01
A relativistic mixing-layer model for jets in low-luminosity radio galaxies
We present an analytical model for jets in Fanaroff & Riley Class I (FRI) radio galaxies, in which an initially laminar, relativistic flow is surrounded by a shear layer. We apply the appropriate conservation laws to constrain the jet parameters, starting the model where the radio emission is observed to brighten abruptly. We assume that the laminar flow fills the jet there and that pressure balance with the surroundings is maintained from that point outwards. Entrainment continuously injects new material into the jet and forms a shear layer, which contains material from both the environment and the laminar core. The shear layer expands rapidly with distance until finally the core disappears, and all of the material is mixed into the shear layer. Beyond this point, the shear layer expands in a cone and decelerates smoothly. We apply our model to the well-observed FRI source 3C31 ...
2009-01-01
Review of electron beam therapy physics
Energy Technology Data Exchange (ETDEWEB)
For over 50 years, electron beams have been an important modality for providing an accurate dose of radiation to superficial cancers and disease and for limiting the dose to underlying normal tissues and structures. This review looks at many of the important contributions of physics and dosimetry to the development and utilization of electron beam therapy, including electron treatment machines, dose specification and calibration, dose measurement, electron transport calculations, treatment and treatment-planning tools, and clinical utilization, including special procedures. Also, future changes in the practice of electron therapy resulting from challenges to its utilization and from potential future technology are discussed. (review)
2006-07-07
Quasi-elastic electron scattering by GaAs surface
International Nuclear Information System (INIS)
Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).
1994-03-20
Polarization of high-energy electrons traversing a laser beam
Energy Technology Data Exchange (ETDEWEB)
When polarized electrons traverse a region where the laser light is focused their polarization varies even if their energy and direction of motion are not changed. This effect is due to interference of the incoming electron wave and an electron wave scattered at zero angle. Equations are obtained which determine the variation of the electron-density matrix, and their solutions are given. The change in the electron polarization depends not only on the Compton cross section but on the real part of the forward Compton amplitude as well. It should be taken into account, for example, in simulations of the e{yields}{gamma} conversion for future {gamma}{gamma} colliders. (orig.). 16 refs.
1998-02-21
Polarization of high-energy electrons traversing a laser beam
International Nuclear Information System (INIS)
When polarized electrons traverse a region where the laser light is focused their polarization varies even if their energy and direction of motion are not changed. This effect is due to interference of the incoming electron wave and an electron wave scattered at zero angle. Equations are obtained which determine the variation of the electron-density matrix, and their solutions are given. The change in the electron polarization depends not only on the Compton cross section but on the real part of the forward Compton amplitude as well. It should be taken into account, for example, in simulations of the e#->##gamma# conversion for future #gamma##gamma# colliders. (orig.).
Inelastic electron--dipole-molecule scattering at sub-milli-electron-volt energies: HF and NH_3
International Nuclear Information System (INIS)
Studies of destruction of very-high-n (100
Energy Technology Data Exchange (ETDEWEB)
The Advanced Power Electronics Interfaces for Distributed Energy Workshop, sponsored by the California Energy Commission Public Interest Energy Research program and organized by the National Renewable Energy Laboratory, was held Aug. 24, 2006, in Sacramento, Calif. The workshop provided a forum for industry stakeholders to share their knowledge and experience about technologies, manufacturing approaches, markets, and issues in power electronics for a range of distributed energy resources. It focused on the development of advanced power electronic interfaces for distributed energy applications and included discussions of modular power electronics, component manufacturing, and power electronic applications.
2006-10-01
[The study of the mixing layer by the point image method].
The properties of the mixing layer in dynamic systems were studied by the example of a mathematical model of the cubic image type. Its role in the generation of information and the evolution of its significance was shown. At the moment of generation, information is of zero significance, and this significance then increases. A criterion of efficiency was proposed, and the optimum moment of making a decision in creative work was determined. It was shown that the increase in the variability of the parameters of a living system upon entry into the mixing layer and its decrease upon exit can serve as objective indicators of the transition of the system from one dynamic regime (attractor) to another. PMID:12723364
Energy Technology Data Exchange (ETDEWEB)
The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.
2003-06-02
Lateral optical confinement of the heterostructure semiconductor Raman laser
This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.
1987-11-02
Environmental sciences and applications. Volume 4. Strategy for the ozone layer
Energy Technology Data Exchange (ETDEWEB)
A synthesis of papers based on the United Nations Environment Programme meeting on the ozone layer, Washington DC, this book contains valuable information on ongoing and planned activities concerned with stratospheric ozone problems, and presents the recommendations for further action resulting from the meeting. Possible changes in the characteristics of the ozone layer are discussed, together with the environmental, ecological, climatic, economic, and health implications of stratospheric ozone depletion. A comprehensive survey of current research in five European countries, the USA, Canada, and Australia is included and the volume is concluded by the UNEP report of the meeting and a world plan of action.
1980-01-01
EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters
International Nuclear Information System (INIS)
Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 A and 3.6 A are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.
2007-02-02
Conceptual design of the ATLAS EM muon chamber support structures
The conceptual design of the support structures of the EM muon chambers is presented. On each side of the detector the EM chambers are arranged in four layers: one layer of MDTs and the three layers of TGCs. The chambers are mounted on four individual wheel structures per side. The four wheels are inclined by 1.23% and suspended from two longitudinal beams parallel to the beam axis. In order to allow for the opening of the ATLAS detector the wheels can be displaced longitudinally over a distance of 6 m. In addition individual wheels can be separated from each other by up to 1 m for maintenance purposes.
1998-01-01
Adaptive conventional power system stabilizer based on artificial neural network
Energy Technology Data Exchange (ETDEWEB)
This paper deals with an artificial neural network (ANN) based adaptive conventional power system stabilizer (PSS). The ANN comprises an input layer, a hidden layer and an output layer. The input vector to the ANN comprises real power (P) and reactive power (Q), while the output vector comprises optimum PSS parameters. A systematic approach for generating training set covering wide range of operating conditions, is presented. The ANN has been trained using back-propagation training algorithm. Investigations reveal that the dynamic performance of ANN based adaptive conventional PSS is quite insensitive to wide variations in loading conditions.
1995-12-31
A multilayered acoustic hyperlens with acoustic metamaterials
British Library Electronic Table of Contents (United Kingdom)
The acoustic hyperlens can be realized by an alternating layered structure of water and fluid with negative mass density. Based on this alternating layered principle, we propose that an acoustic metamaterial consisting of three layers in water background can be designed to replace the fluid with negative mass density. The effective mass density and bulk modulus of the system which is composed of acoustic metamaterial and water are functions of the frequency. The effective mass density of such a system is close to the negative mass density of the fluid at a specific frequency; thus an acoustic metamaterial hyperlens can be achieved.
2011-01-01
0.6 #mu#m-band AlGaInP visible laser diodes
International Nuclear Information System (INIS)
Highly reliable, practical 0.6 #mu#m-band AlGaInP visible laser diodes (LDs), using a GaInP active layer, are described. Over 10,000 hour stable operation at 50 degrees C has been achieved for 3mW light output. Characteristics for visible LDs with an AlGaInP active layer or a multi-quantum-well active layer are also presented.
1988-11-02
International Nuclear Information System (INIS)
... Smith, RC Westinghouse Research Labs., Pittsburgh v. 25(5) p. 292-295.
International Nuclear Information System (INIS)
A detailed treatment is introduced to measure the dynamic stability of the relativistic electrons in a self-amplified spontaneous emission free-electron laser (FEL) system, which includes the numerical approach of the Kolmogorov entropy (entropy-like quantity), the general equations of motion for a charged particle and the method of monitoring the simulation accuracy. Numerical experiments reveal a new phenomenon that there exists the possibility of the transition from chaotic to non-chaotic phase-space trajectories of the strongly relativistic electrons due to the effect of their self-fields. The adiabatic magnetic field of a one-dimensional wiggler may have a slight influence on the electron transportation in the absence of the FEL fields, but substantially affects the dynamic stability of the electrons in the process of the FEL interaction. Moreover, the laser fields diminish the ...
2004-02-28
Preparation of covalently modified organic-inorganic composite nanoparticles and their interfacial electron transfer researches
1998-01-01
Multiple glomus tumours: successful treatment with electron beam irradiation
Energy Technology Data Exchange (ETDEWEB)
A case is reported of a 23-year old male with multiple glomus tumours that showed marked involution after he had electron beam therapy. (author).
1990-11-01
Electron capture decay of "2"0"3Bi
International Nuclear Information System (INIS)
The electron capture decay scheme of "2"0"3Bi is studied. Energies and relative intensities of gamma rays are given.
Dose enhancement in bone in electron beam therapy
Energy Technology Data Exchange (ETDEWEB)
This study investigated dose to bone tissue in electron beam therapy. Measurements were made using films and thermoluminescent dosimeters in a polystyrene phantom containing bone inhomogeneity for 15-MeV, 12-MeV, and 9-MeV electron beams. An increase in dose of approximately 18%, 12%, and 11%, for the three electron energies respectively, relative to the dose in polystyrene, was found for bone material having an electron density (relative to water) of 1.73. Measurements were also made using films for 15- and 9-Mev electrons in a phantom with a mandibular bone and teeth. A dose enhancement in bone of approximately 10% and 7%, respectively, for the two energies was found in the phantom where the electron density of bone was about 1.60. These results suggest that injury to bone is possible in those clinical situations where high doses of ...
1984-05-01
Dose enhancement in bone in electron beam therapy
International Nuclear Information System (INIS)
This study investigated dose to bone tissue in electron beam therapy. Measurements were made using films and thermoluminescent dosimeters in a polystyrene phantom containing bone inhomogeneity for 15-MeV, 12-MeV, and 9-MeV electron beams. An increase in dose of approximately 18%, 12%, and 11%, for the three electron energies respectively, relative to the dose in polystyrene, was found for bone material having an electron density (relative to water) of 1.73. Measurements were also made using films for 15- and 9-Mev electrons in a phantom with a mandibular bone and teeth. A dose enhancement in bone of approximately 10% and 7%, respectively, for the two energies was found in the phantom where the electron density of bone was about 1.60. These results suggest that injury to bone is possible in those clinical situations where high doses of ...
Background information on the high energy physics program and the proposed Stanford linear electron accelerator project
1961-01-01
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