Science.gov (United States)

A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...

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Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

Science.gov (United States)

PMID:19862292

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Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

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Three kinds of surface modifications were carried out on LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-films to improve the charge and discharge characteristics of LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} positive electrodes. Among them, Zr(OBu){sub 4}/poly(methyl methacrylate) (PMMA)-treated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrodes showed charge and discharge efficiency of 80-84% in the first cycle, which was much higher than that for an untreated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrode (73%). The values of the charge and discharge efficiency were still higher than that for an untreated electrode after the 30th cycle. The charge and discharge curves gave two plateaus at around 4.72 and 4.76 V, which were very similar to those for the untreated electrode. Ac impedance spectroscopy revealed that the surface film resistance should not increase by Zr(OBu){sub 4}/PMMA ...

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The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two ...

British Library Electronic Table of Contents (United Kingdom)

We have developed efficient spectrally selective infrared (IR) emitters that can be utilized for thermophotovoltaic (TPV) power generation by using stainless steel (SUS304) substrates coated with b- FeSi2 thin films. To develop spectrally selective emitters, we theoretically propose antireflection (AR) coatings consisting of a single layer of a dielectric material having a high refractive index (~5) and are appropriate for use with metals such as stainless steels in the IR region. This type of AR coating is fabricated by sputtering a b- FeSi2 thin film on a polished SUS304 substrate. The reflectance in the IR region is successfully reduced to less than 10%. In addition, the AR properties are stable even at 700 K in air. Therefore, metals with AR coatings of b- FeSi2 can be applied to IR em...

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A) diffuse bilayer, B) spontaneously formed multilayer, and C) vertically homogenous thin films, are fabricated. The photocurrent/voltage performance is compared and it is found that the self-stratified structure (B) yields the highest energy conversion efficiency. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

International Nuclear Information System (INIS)

Thermophotovoltaic (TPV) systems are attractive possibilities for direct thermal-to-electric energy conversion, but have typically required the use of black body radiators operating at high temperatures. Recent advances in both the understanding and performance of solid rare-earth oxide selective emitters make possible the use of TPV at temperatures as low as 1200K. Both selective emitter and filter system TPV systems are feasible. However, requirements on the filter system are severe in order to attain high efficiency. A thin-film of a rare-earth oxide is one method for producing an efficient, rugged selective emitter. An efficiency of 0.14 and power density of 9.2 W/KG at 1200K is calculated for a hypothetical thin-film neodymia (Nd2O3) selective emitter TPV system that uses radioisotope decay as the thermal energy source.

International Nuclear Information System (INIS)

Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and ...

International Nuclear Information System (INIS)

The ultra-high pressure waterjet technology was being evaluated at Florida International University (FIU) as a baseline technology. In conjunction with FIU's evaluation of efficiency and cost, this report covers the evaluation conducted for safety and health issues. It is a commercially available technology and has been used for various projects at locations throughout the country. The ultra-high pressure waterjet technology acts as a cutting tool for the removal of surface substrates. The Husky trademark pump feeds water to a lance that directs the high pressure water at the surface to be removed. The safety and health evaluation during the testing demonstration focused on two main areas of exposure. These were dust and noise. The dust exposure was found to be minimal, which would be expected due to the wet environment inherent in the technology, but noise exposure was at a significant level. Further testing for noise is ...

Science.gov (United States)

Manufacture of cadmium sulfide thin film solar cells

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This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

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Case studies are presented for treatment of refinery wastes in a pilot-scale thin-film evaporator, the removal of volatiles from industrial wastewater for two steam strippers, and the removal of semivolatiles from water by steam stripping followed by liquid-phase carbon adsorption. The report provides data on removal efficiency, air emissions, process residuals, treatment costs, and process limitations. Details on sampling and analytical procedures, quality assurance, and process data are contained in the Appendixes (Volume II).

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Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 ...

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This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Science.gov (United States)

No abstract prepared.

J-STORE (Japan)

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International Nuclear Information System (INIS)

Nitrogen doped Diamond-like carbon thin films were deposited on n-Si and SiO_2 substrates by rf magnetron sputtering using pure graphite (99.999%) as the target material and mixtures of Ar, N_2 and H_2 for plasma generation. The dependence of structural and optical properties on nitrogen content was investigated using XPS, Raman spectroscopy, FT-IR spectroscopy, and Ellipsometry studies. It was found that as the nitrogen content was increased in the plasma, sp"2 bonding favored. Also it was observed that oxygen contamination increased with nitrogen content. Typical C-H stretching modes connected with diamond-like carbon could be seen in FT-IR spectra. The I_D and I_G bands were well defined and it was observed that as nitrogen content increased I_G band was enhanced. Ellipsometry studies revealed that the optical constants like refractive index (n) and extinction co-efficient (k) increased with increase in nitrogen content ...

Science.gov (United States)

... Accession Number : ADD151811. Title : Ultra High Strength Beta Titanium Alloy for Fasteners. Descriptive Note : Journal article,. ...

Energy Technology Data Exchange (ETDEWEB)

Lithium (Li) plating-stripping reaction properties at the lithium phosphorus oxynitride glass electrolyte (LiPON)/copper thin film (Cu) interface is improved by the insertion of nano-thickness platinum (Pt) layer at the interface. The LiPON films are formed on mirror-polished lithium-ion conductive solid electrolyte sheets, and current collector thin films of Li, Cu-Pt multi layer, and Cu are formed on the LiPON films. The plating-stripping reactions at the LiPON/current collector films interface are carried out by galvanostatic and potential sweep measurements. Galvanostatic measurements reveal that Pt layer insertion reduces the overvoltage of the reaction and improves its coulomb efficiency. Also, cyclic voltammetry measurement suggests formation of Li-Pt alloys at higher voltages than 0 V (vs. Li/Li{sup +}) during the lithium plating process. Scanning electron microscopy ...

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This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

KoreaScience (Korea)

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KoreaScience (Korea)

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CERN Document Server

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO 2 Substrates

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Development of useful high-critical-temperature (high-{Tc}) superconductors requires synthesis of superconducting compounds; fabrication of wires, tapes, and films from these compounds; production of composite structures that incorporate stabilizers or insulators; and design and testing of efficient components. This report describes technical progress of research and development efforts aimed at producing superconducting components based on the Y-Ba-Cu, Bi-Sr-Ca-Cu, Bi-Pb-Sr-Ca-Cu, and Tl-Ba-Ca-Cu oxides systems. Topics discussed are synthesis and heat treatment of high-{Tc} superconductors, formation of monolithic and composite wires and tapes, superconductor/metal connectors, characterization of structures and superconducting and mechanical properties, and fabrication and properties of thin films. Collaborations with industry and academia are also documented. 10 figs.

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This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL`s in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy`s National Photovoltaic Research Program plans.

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

International Nuclear Information System (INIS)

(1 Feb 1975). Netherlands Rollin, DF Robinson, JE McMaster Univ.,

Energy Technology Data Exchange (ETDEWEB)

Ultra High Vacuum (UHV) test setup for electron gun testing has been developed. The development of next generation light sources and accelerators require development of klystron as a radio frequency power source, and in turn electron gun. This UHV electron gun test setup can be used to test the electron guns ranging from high average current, quasi-continuous wave to high peak current, single pulse etc. An electron gun has been designed, fabricated, assembled and tested for insulation up to 80 kV under the programme to develop high power klystron for future accelerators. Further testing includes the electron emission parameters characterization of the cathode, as it determines the development of a reliable and efficient electron gun with high electron emission current and high life time as well. This needs a clean ultra high vacuum to study these parameters particularly at high ...

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The paper reported the results of fiscal 1994 studies on solar energy in the New Sunshine Project. Relating to the technical development for the practical use of photovoltaic power systems, the development of manufacturing technologies for low-cost substrates and the development of element technology for manufacturing low-cost polycrystalline cells/modules were reported as the development of technology for thin substrate polycrystalline solar cells for practical use. As to the research on fabrication technology for thin film solar cells for practical use, reports were made on the research on low-cost fabrication technology for large-area modules and the technological development for qualitative improvement, etc. In respect to the technological development for super-high efficiency solar cells, reported were the technological development for super-high efficiency single crystalline silicon solar cells ...

Energy Technology Data Exchange (ETDEWEB)

The ternary compound CuInS{sub 2} is attractive for solar cells due to its band gap of 1.54 eV which borders the optimum value necessary for conversion of a solar spectrum. Recently, works on thin film cells based on this material (ZnO/CuInS{sub 2}) has been reported to show efficiency as high as 11.4%. In this paper, the orientation and the morphology of CuInS{sub 2} sprayed films are determined by the means of X-ray diffraction and scanning electron microscopy. Sprayed CuInS{sub 2} films deposited onto a transparent Pyrex substrate with standard fabrication parameters show a chalcopyrite structure with a preferential orientation (1 1 2). A model based on the calculation of the relative dielectric function {epsilon} has been performed in order to obtain the profile of variation of this parameter and to understand the optical behavior of this material via its transmittance and reflectance in visible and near-infrared ...

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This thesis is concerned with the crystallisation behaviour of polymers near to a free surface or a buried interface. The properties of polymers are expected to differ significantly near to an interface (either with air or another polymer), due to the contributions of (a) chain configurations induced at the interface, and (b) different mobilities between interfacial regions and the bulk of the sample. For a semi-crystalline polymer, properties such as the degree of crystallinity and the crystallisation kinetics may be enhanced near to a free surface. Grazing incidence x--ray diffraction (GIXD) is used to investigate such effects in poly(ethylene terphthalate) (PET), showing that a lower crystallisation temperature is obtained at the surface, and the crystallisation kinetics are faster at the surface for all temperatures. It is proposed that in thin films of PET, this surface-induced ordering provides nucleation sites for crystallisation in the ...

KoreaScience (Korea)

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International Nuclear Information System (INIS)

The optical pressure exerted o a thin film, which is locked in the evanescent field formed at the plane interface with a totally-reflected Gaussian beam, is investigated. Some calculations of the pressure on the film caused by the evanescent field are presented in the different conditions of film thickness, film position, incident angle and polarization of a gaussian beam. The results show that the pressure exertion on the thin film can change from pushing to pulling as the parameters are varied. In particular, we find that the direction of optical pressure can act oppositely at the different positions of the film surface in the evanescent field.

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The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

Science.gov (United States)

... The phenol and cresylic acid stream is flashed in a thin film evaporator over a concentrated sulfuric acid mixture to remove pyridine type substances ...

British Library Electronic Table of Contents (United Kingdom)

Lithium phosphorous oxynitride(Lipon) thin films as a lithium ion conductive electrolyte were prepared by radio frequency reactive sputtering in N2 plasma. The properties of the amorphous Lipon solid electrolyte were investigated as a function of N2 pressure during reactive sputtering. The ionic conductivity and the electrochemical stability of Lipon thin films improved drastically as the N2 pressure decreased. The ionic conductivity closed to 10?6 S cm?1 and obtained a stability window of 1.0?5.0 V with an N2 pressure of 5 mTorr, where the number of nitrogen bonds between the phosphate groups were more than those formed at higher pressure. It was possible to fabricate the Li//LiCoO2 complete thin film battery using this Lipon solid electrolyte, which exhibited excellent discharge characte...

Science.gov (United States)

... to-continuum X-ray intensity ratio [5]. For ence in the means [7]. In addition, washing samples on thin films, the characteristic X- lymphocytes in NH ...

Energy Technology Data Exchange (ETDEWEB)

The high-strength and ultra high-strength steels developed and produced by Thyssen Krupp Stahl make a major contribution to automotive lightweighting. Proven and newly-developed coatings are used to meet increasingly important corrosion protection requirements. Design for materials, optimized forming and joining processes and the use of modern simulation techniques help to exploit the potential of the new steels. Future development work will focus on reducing the density of steels without compromising their well-known advantages - in particular their strength. The use of high-strength and ultra high-strength steels in the automotive industry is on the increase. Steel will remain the material of choice for auto manufacture, above all due to its potential for cost-efficient lightweight construction and its full recyclability. (orig.) [German] Einen wesentlichen Beitrag zum Leichtbau ...

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The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.

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This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

International Nuclear Information System (INIS)

Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).

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A simple and continuous model for the on-state current of polysilicon thin-film transistors, suitable for implementation in circuit simulators, is presented. The model includes the potential barrier at the grain boundaries, the channel length modulation and the excess current due to impact ionization. Comparison between measured output characteristics and the model shows excellent agreement over wide range of bias voltages and for devices with different gate lengths.

International Nuclear Information System (INIS)

Electrodeposition of semiconducting iron oxide (Fe_2O_3) thin film was carried out from an alkaline sulphate bath. A 0.1 M ferrous sulphate (FeSO_4#centre dot#7H_2O) was complexed with 0.1 M citric acid. By addition of 1 N NaOH, pH of the solution was made alkaline (pH=9) and deposition of iron oxide (Fe_2O_3) thin films was carried out potentiostatically at room temperature (300 K). From cyclic voltametry (CV), electrochemical studies were carried out for deposition of iron oxide thin films. The XRD studies reveal that Fe_2O_3 with epsilon (#epsilon#) phase having monoclinic crystal structure is formed. By observing scanning electron microscope (SEM), it is seen that iron oxide films were homogeneous, uniform and well covered to surface of the substrate. Grain size was found to be in nanometers range from XRD analysis. The optical band gap of Fe_2O_3 ...

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In the advance of fuel cell electric vehicles (EV), hybrid electric vehicles (HEV) can contribute to reduced emissions and energy consumption of personal cars as a short term solution. Trade-offs reveal better emission control for series hybrid vehicles, while parallel hybrid vehicles with different drive trains may significantly reduce fuel consumption as well. At present, costs and marketing considerations favor parallel hybrid vehicles making use of small, high power batteries. With ultra high power density cells in development, exceeding 1 kW/kg, high power batteries can be provided by adapting a technology closely related to consumer cell production. Energy consumption and emissions may benefit from regenerative braking and smoothing of the internal combustion engine (ICE) response as well, with limited additional battery weight. High power supercapacitors may assist the achievement of this goal. Problems to be solved in practice comprise ...

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Nb{sub 2}O{sub 5} thin films were formed on aluminum foils by a sol-gel process in order to increase the capacitance of the aluminum foils which are used as aluminum electrolytic capacitors. Investigations focussed on the preparation and characterization of the coating solution, the formation of Nb{sub 2}O{sub 5} thin films on aluminum foils, and the heat treatment and anodization of the films. The phase transition and electrical properties, such as capacitance, leakage current, and withstand voltage of the Nb{sub 2}O{sub 5} thin films were also measured. The Nb{sub 2}O{sub 5} thin films annealed at temperatures below 550 degree C were found to be amorphous, but they were crystallized to the orthorhombic phase by annealing at temperatures higher than 580 degree C. The capacitance of the coated samples increased with an ...

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Three-dimensional porous Sn thin film electrodes were prepared by electroless deposition on copper foam, then its morphology and electrochemical property were studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), electrochemical cycling test and cyclic voltammetry (CV). The porous framework and micro-holes have shown a great structure advantage in restricting severe volume changes when the Sn thin film was employed as anode for lithium-ion battery. The film electrode of sample C with an initial capacity of 676 mAh g{sup -1} showed good cycle performance displayed by retaining a capacity of 313 mAh g{sup -1} after 100 cycles.

British Library Electronic Table of Contents (United Kingdom)

Dopant-free Bi2Ti2O7 thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV?Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La3+ ions can act as a stabilizer of Aurivillus phase BLT and a grain?growth inhibitor in BLT thin films.

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The measurement of local heat transfer coefficients is necessary to record the basic phenomena of heat transfer in thin-film apparatuses. For this reason the so-called electrochemical analogy method was developed and used for this application. The electrochemical method implies a specifically composed electrolyte which substitutes the fluid to be evaporated in the thin-film apparatus. Using the redox electrolyte (0,025 kmol/m/sup 3/ K/sub 4/Fe(CN)/sub 6/ resp. k/sub 4/Fe(CN)/sub 6/ and 2nNaOH) the viscosity was, for the first time, thickened until 0.4 Pa s by the help of hydroxyethyl-cellulose.

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

Science.gov (United States)

Most palladium thin film based hydrogen gas sensors have response and recovery times that are too long to make them useful in vehicular and stationary gas leak detection applications. In contrast, a palladium-silver thin film based microcantilever (MC) hydrogen gas microsensor is reported herein with near ideal response characteristics for use in these hydrogen economy related applications. Specifically, 3-10 second response and recovery times have been measured for these sensors in contrast to previous sensor response measurements of several to tens of minutes using Pd thin film and MC based sensing techniques. The much reduced response times observed in the present study are attributed to a wet chemical Pd-Ag thin film deposition technique and a gas conditioning protocol that produces a highly nanostructured, porous ...

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Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

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Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional structure. While ...

British Library Electronic Table of Contents (United Kingdom)

Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

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Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

International Nuclear Information System (INIS)

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

International Nuclear Information System (INIS)

The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

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A liquid-fillet is formed in front of a rotor blade in the cylinder of a horizontal agitated thin-film evaporator. Its thickness varies due to the gravity while the blade revolves inside the cylinder. In the critical condition, the amplitude of the oscillation becomes infinite and the phase advances 180 degrees. Prior to the critical condition, the experimental data agrees fairly well with the predictions. Near the critical condition, the amplitutde increases and the phase advances 60 degrees. In other words, the transition to the critical condition occurs continuously. (6 figs, 1 ref)

International Nuclear Information System (INIS)

One of the main problems related to optical thin film materials used in high power laser environments is the catastrophic damage caused to them due to laser irradiation. While the influence of ion bombardment on the optical properties of oxide thin films is now a well understood subject, the morphology and crystalline behaviour of these films under ion incidence is not so well studied. Hence, it is of great importance to investigate the effects of ion bombardment during growth on the microstructure and crystalline behaviour of oxide materials.

Energy Technology Data Exchange (ETDEWEB)

A major obstacle prohibiting the use of microwaves for soil disinfection and disinfestation is the large amount of energy required to obtain sufficient results. The present work presents an experimental study of the effect of initial soil temperature and soil moisture on energy consumption by application of microwaves for soil disinfection. All experiments were carried out by using a microwave generator of a nominal power output of 900 W. The ultra-high-frequency field (2450{+-}2 MHZ) was produced by a magnetron tube and channelled through a metal waveguide. The output opening of the waveguide was placed directly on the soil surface. It was found that a soil with 15% moisture content (w.b.) and an initial temperature of 20degC requires energy to be heated at a depth of 10 cm up to 61degC which is 3.2 times more than the energy required to heat the soil up to 5 cm depth at the same initial temperature. In general, the conversion of electric energy to useful ...

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical ...

Energy Technology Data Exchange (ETDEWEB)

A major factor for the achievement of the desirable performance, efficiency and lifetime of flexible organic electronic devices is the optimization of the encapsulation layers that protect the device active layers by atmospheric gas molecule permeation. The active layers consisted of small molecule and/or polymer organic semiconductors as well as the organic conductors need to be encapsulated into a transparent medium that will provide the necessary protection and maintain their charge generation and transport characteristics. The encapsulation layers are generally consisted of inorganic thin films (silicon oxide-SiO{sub x} and aluminium oxide-AlO{sub x}) deposited onto the polymeric substrates, such as PolyEthylene Terephthalate (PET). In this work, in situ and real-time Spectroscopic Ellipsometry in the ultraviolet spectral region has been implemented in order to investigate the growth of inorganic SiO{sub x} and AlO{sub ...

Energy Technology Data Exchange (ETDEWEB)

Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is considered. Between CIGSSe ...

International Nuclear Information System (INIS)

Understanding human brain function, brain development and brain dysfunction is one of the great challenges of the twenty first century. Biomedical imaging has now run up against a number of technical constraints that are exposing limits to its potential. In order to overcome the current limits to high-field magnetic resonance cerebral imaging (MRI) and unleash its fullest potential, the Cea has built NeuroSpin, an ultra-high-field neuroimaging facility at its Saclay centre (in the Essonne). NeuroSpin already boasts three fully operational MRI systems. The first is a 3-tesla high-field system and the second is a very-high-field 7-tesla system, both of which are dedicated to clinical studies and investigations in humans, while the third is an ultra-high-field 17.65-tesla system designed for studies on small animals. In 2011, NeuroSpin will be commissioning an 11.7-tesla ultra-high-field system of unprecedented power that is ...

International Nuclear Information System (INIS)

Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant ...

International Nuclear Information System (INIS)

FexZn1-x alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K?/K? x-ray intensity ratios of Zn and Fe in FexZn1-x thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi 241Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in FexZn1-x thin films for different ...

Energy Technology Data Exchange (ETDEWEB)

Corrosion characteristics of Al and Cu thin films have been studied in cyclic fog tests using tap water fog and fog created with 0.1% NaCl solution in tap water. Likewise, their corrosion features have been analyzed in continuous immersion testing in the laboratory in distilled water, tap water, in 0.1% NaCl and 3.5% NaCl solutions in distilled water. The corrosion potentials and the corrosion currents of these thin films change and reach steady state values after some time. However, steady state is not realized in 3.5% NaCl solutions. The corrosion current density data have been used to calculate lifetime of 1 {mu}m thick thin films of Al and Cu in the various tests, and assuming that the fog test data would hold under normal exposure conditions, life spans for these thin film sensor elements in actual exterior exposure ...

International Nuclear Information System (INIS)

In this study, WO3 thin films were grown on glass substrates using an aqueous solution containing tungstate (NH4)2WO4 as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at Ts = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T(?) and reflectance R(?) spectra in 300-1800 ...

International Nuclear Information System (INIS)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped ...

Energy Technology Data Exchange (ETDEWEB)

The Raywell Process Plants unit, which reclaims a wide range of organic solvents, including chlorinated hydrocarbons, is based on thin film evaporation and distillation rather than steam distillation, thus reducing the risk of contamination by water. Henry Balfour and Co.'s Pfaudler Solvent Recovery System gives 96% or better solvent recovery and produces a near-solid waste suitable for landfill disposal; like the Raywell system, it uses a mechanically wiped thin-film evaporator. Midland Oil Refineries uses sa Raywell thin-film evaporator for recovery of waste lubricating oils rather than the conventional sulfuric acid/clay treatment, thus avoiding formation of sulfuric acid sludge waste. The Henry Balfour Bioenergy anaerobic digestion system gives yields of fuel gas with 65-75% methane as high as 0.8 cu m/kg BOD; it achieves 95-98% BOD removal with no pH control or nutrient addition because it ...

Energy Technology Data Exchange (ETDEWEB)

Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10{sup -5} S/cm at room temperature for the film annealed at 800 deg. C for 30 min.

Energy Technology Data Exchange (ETDEWEB)

Vertical thin film evaporators have been used to concentrate and dry solutions because their rotating swing blades prevent scale from being deposited on the heated surfaces. Powdering capacity of the vertical thin film evaporator was examined experimentally for drying applications of radioactive liquid waste generated from nuclear power plants. As a result, it was found that the powdering capacity increased with the blade rotation, changing significantly in the low ratational region and scarcely in the high rotational region. The powdering capacity in the high rotational region was restricted by the lack of heat flux which was theoretically evaluated for the concentrating process. As the critical factor in the low rotational region was not clear, a visual test apparatus was made to observe flow patterns in the evaporator, and a powdering model was obtained. This model showed that powdering process was ...

British Library Electronic Table of Contents (United Kingdom)

Herein, we report engineering of nanostructured p-CuIn3Se5/n-CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu^+, In^3^+ and Se^2^- ions in alkaline medium. The uniform deposition of heterojunction thin films is achieved by optimizing the pH, temperature and molarity of the reactant bath. The as-deposited thin-films were annealed at 200^oC in air for 1h and further characterized for structural, optical and electrical properties using UV-Vis spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Hall effect for type of conductivity, and I-V measurement to investigate the char...

Energy Technology Data Exchange (ETDEWEB)

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit ...

International Nuclear Information System (INIS)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to ...

International Nuclear Information System (INIS)

Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of FIB patterned magnetic elements. It is ...

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...

International Nuclear Information System (INIS)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).

British Library Electronic Table of Contents (United Kingdom)

To investigate the variation in the fine structure of polyamide thin-film composite (TFC) membranes prepared via two different interfacial polymerization conditions (IP-I and IP-II), experiments on Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), water contact angle, and positron annihilation spectroscopy (PAS) coupled to a slow positron beam were conducted. Polyamide TFC membranes were prepared via the interfacial polymerization reaction between triethylenetetramine (TETA) and trimesoyl chloride (TMC) on the surface of a modified polyacrylonitrile (mPAN) membrane. Compared with the polyamide TFC membrane prepared via IP-I, the polyamide layer prepared via IP-II showed a shorter S plateau length (thinner thickness), a higher o-Ps intensity I3 value (higher free-volume con...

Energy Technology Data Exchange (ETDEWEB)

The fundamental points to be considered in a waste treatment system for a country like Japan, where the final disposal method has not been decided and the wastes have to be stored in the power plants, are volume reduction of the wastes, safe storage of the wastes in the plant, and flexibility regarding the final disposal. A system has been developed that consists of a thin film evaporator for the direct solidification of the liquid waste, a pelletizer for producing hard pellets from the powdered wastes, a pellet storage unit, and a solidification unit for the final disposal. A pilot plant with waste treatment capacity of 200 kg/h was built in 1976 and has proved the system feasibility. This paper reports on pilot plant tests of the thin film evaporator and other components, tests on pellet deterioration during long term storage, and integrity tests on the final disposal of the pellet bitumen package.

CERN Document Server

substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via non-equilibrium ...

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

Energy Technology Data Exchange (ETDEWEB)

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.

British Library Electronic Table of Contents (United Kingdom)

This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

Energy Technology Data Exchange (ETDEWEB)

The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.

International Nuclear Information System (INIS)

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 #mu#m. (author).

International Nuclear Information System (INIS)

Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.

British Library Electronic Table of Contents (United Kingdom)

In this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34x10^-^1^3Scm^-^1. The height of the potential barrier was determined to be 1.65eV for this alternate layer LB film system.

CERN Document Server

Condensed matter black hole analogues may provide guidance in grappling with difficult questions about the role of short distance physics in the Hawking effect. These questions bear on the very existence of Hawking radiation, the correlations it may or may not carry, the nature of black hole entropy, and the possible loss of information when a black hole evaporates. We describe a model of black hole formation and evaporation and the loss of information to a disconnected universe in a thin film of 3He-A, and we explain why the existence of Hawking radiation has not yet been demonstrated in this model. [We would like this article to be accessible to researchers in both condensed matter and gravitational physics, hence we include more than the usual amount of introductory material.

Energy Technology Data Exchange (ETDEWEB)

From optical point of view and due to the magnetic interaction of the cold neutrons with the unpaired electron shell, magnetic materials hae a neutron spin-dependent refractive index n[sup +] [spin up] and n[sup -] [spin down]. Magnetic media such as Fe, Co and Ni react like birefringent uniaxial crystals in ordinary optica. n[sup +] and n[sup -] are the equivalent of the ordinary and extraordinary refractive indices. The specular reflection of spin polarized neutrons which is due to the discontinuity of the magnetic induction at the surface of the ferromagnet is a sensitive probe of surface and interface magnetism. We shall first give the background of the art of polarized neutron optics. Secondly, some recent examples from surface and interface magnetism will be given to illustrate the power of this technique such as the magnetic coupling in thin films and multilayers and flux penetration in superconductors. (orig.).

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

Energy Technology Data Exchange (ETDEWEB)

The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular ...

Energy Technology Data Exchange (ETDEWEB)

Superconducting thin film particle detectors can be very attractive due to the low sensitivity to radiation damage. We describe the fabrication procedure and the characterization of Nb/Al bilayers as particle detectors. First steady and dynamical results are reported from tests of 5 MeV alpha-particle detection.

Energy Technology Data Exchange (ETDEWEB)

A summary of the topics covered in papers presented at the 1995 Brookhaven joint conference on production, neutralization, and application of negative ion beams is given. The conference topics covered included plasma ion sources, plasma seeding of these sources for increased ion production, beam extraction and transport, computer simulation and design studies, and operation of existing and experimental ion source facilities. Application of the sources to accelerator, tokamak, and thin film deposition are discussed. (AIP) {copyright} {ital 1996 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

The bibliography contains citations concerning the structural properties of sputtered tantalum and tantalum compounds. The preparation of thin film capacitors and resistors is described. The electrical properties of the sputtered films are also included. The influence of the substrate on the properties of the coatings is considered, including adherence of the coating to the substrate, and the effects of impurities on coating integrity. (Contains 250 citations and includes a subject term index and title list.)

Energy Technology Data Exchange (ETDEWEB)

Substantial changes in the radial distribution function of amorphous Si films have been observed in neutron-diffraction studies. The spectra indicate changes in short-range order associated with an approx.11% modification in the bond-angle distribution width. The results allow the first direct comparison of structural and vibrational Raman probes of variations in local order in thin-film amorphous solids. Good agreement is obtained between the measured bond-angle variation and that based on Raman estimates.

Energy Technology Data Exchange (ETDEWEB)

In this work, {beta}-SnS{sub 2} thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl{sub 4}) and thiourea (SC(NH{sub 2}){sub 2}) as precursors. The structural study shows that {beta}-SnS{sub 2} thin film prepared using optimal experimental conditions: substrate temperature T{sub s} = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO{sub 2}. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal conductivity was K{sub c} = 0.85 ...

Energy Technology Data Exchange (ETDEWEB)

Laser direct-write etching of the refractory metals Mo and W was developed using reactions in chlorine and nitrogen trifluoride vapors. Rate and high spatial resolution are simultaneously optimized using a two-vapor halogenation/development sequence, based on surface modification. Local-area laser chlorination of the metal surface is used to predispose areas to subsequent bulk etching.

Energy Technology Data Exchange (ETDEWEB)

The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

Energy Technology Data Exchange (ETDEWEB)

In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.

International Nuclear Information System (INIS)

We have studied in detail the gamma radiation induced changes in the electrical properties of the (TeO_2)_0_._9 (In_2O_3)_0 _._1 thin films of different thicknesses, prepared by thermal evaporation in vacuum. The current-voltage characteristics for the as-deposited and exposed thin films were analysed to obtain current versus dose plots at different applied voltages. These plots clearly show that the current increases quite linearly with the radiation dose over a wide range and that the range of doses is higher for the thicker films. Beyond certain dose (a quantity dependent on the film thickness), however, the current has been observed to decrease. In order to understand the dose dependence of the current, we analysed the optical absorption spectra for the as-deposited and exposed thin films to obtain the dose dependences of the optical bandgap and energy width ...

British Library Electronic Table of Contents (United Kingdom)

Deposition of CN-based films by a novel version of active screen plasma nitriding, aiming at surface modification of polymers, is reported. The approach relies on the use of pure graphite as the grid material, which was found to act both as an active screen and as a dry source of carbon atoms for the synthesis of thin films consisting mainly of a stoichiometric CN layer with columnar-type structure and dome-like nanostructured morphology.

International Nuclear Information System (INIS)

An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, Pd and Pt. (orig.).

Energy Technology Data Exchange (ETDEWEB)

A railgun has an armature driven between two rail-like conductors. In other words, it is a linear drive device system that drives airframes by using the Lorentz`s force. The system is expected as a next-generation high-speed transport means, or as a means to create such ultimate fields as ultra-high pressures, ultra-high temperatures, and ultra-ferromagnetic fields. This paper is a report on investigations on the relevant technological trends as surveyed by the investigation committee at the Institute of Electrical Engineers of Japan using research reports published inside and outside the country. The reported themes cover explanations from the construction to the pulse power supply that forms the core of the technology, problems in switching, recent status of research and development, and to application fields. Compatibility in the high-level electrical and mechanical performances demanded in the railgun is not as easy as has been anticipated ...

British Library Electronic Table of Contents (United Kingdom)

Tailor die quenching in the hot stamping of quenchable steel sheets was developed to produce ultra-high strength steel formed parts having strength distribution. Local portions of the heated sheet were quenched by holding grooved tools at the bottom dead centre during the stamping. Non-contact portions were generated in the sheet by grooving the tools, and thus the strength in the contact portions is high owing to the quenching and that in the non-contact portions is low owing to the lack of the quenching. Hat-shaped products having a tensile strength of approximately 1.5GPa only at four corners were formed.

Energy Technology Data Exchange (ETDEWEB)

This paper describes how hydrogen transport affects the severity of hydrogen embrittlement in 300 M and AerMet100 ultra high strength steels. Slow strain rate tests were carried out on specimens coated with electrodeposited cadmium and aluminium-based SermeTel 1140/962. Hydrogen diffusivities were measured using two-cell permeation and galvanostatic charging methods and values of 8.0 x 10{sup -8} and 1.0 x 10{sup -9} cm{sup 2} s{sup -1} were obtained for 300 M and AerMet100, respectively. A two-dimensional diffusion model was used to predict the hydrogen distributions in the SSR specimens at the time of failure. The superior embrittlement resistance of AerMet100 was attributed to reverted austenite forming around martensite laths during tempering.

Energy Technology Data Exchange (ETDEWEB)

High and ultra-high strength steels for pipelines are produced by properly handling the steel microstructure. The metallurgical principles involved in the microstructure control are presented, with emphasis on TMCP processing, that comprises conventional controlled rolling followed by accelerated cooling. (author)

International Nuclear Information System (INIS)

We have studied the correlation between the chemical state and the oxygen-sensing properties of an iron oxide thin film using a setup that allows simultaneous sensor resistance measurements and X-ray photoelectron spectroscopy (XPS) data acquisition. The gas exposures were performed at the highest operating pressure of the XPS spectrometer at a controlled sample temperature which allows direct comparison between the sensor response and the chemical state of the surface. The iron oxide film was modified by a sequence of argon ion sputtering steps and the induced changes in the chemical state, resistance, and sensitivity to oxygen were investigated. The sputtering was found to reduce the iron from the Fe"3"+ to the Fe"2"+ state and to decrease the sensor resistance. The measured sensitivity to oxygen first increased by a factor of two but then collapsed to its original level. The mechanism for oxygen sensing was found to be filling of the oxygen ...

Energy Technology Data Exchange (ETDEWEB)

This paper introduces recent instances of polymerizers for highly viscous liquid needed in the field of synthetic resin and synthetic fiber. A horizontal twin-shaft type polymerizer has two horizontally rotating shafts with stirring blades of spectacle-shaped type, which are arranged at a 90 [degree] phase difference. As they rotate, they scrape highly viscous liquid sticking to the surface inside the polymerizer and on the rotating shafts. This polymerizer is capable of processing highly viscous liquid up to about 2000 Pa[center dot]s. A lattice-type twisting blade polymerizer is a vertical-type reactor and features a special stirring blade capable of stirring highly viscous liquid up to 5000 Pa[center dot]s This polymerizer has no central rotating shaft so that highly viscous liquid does not stick on it. A sloped blade-type thin-film evaporator has spiral blades in the longitudinal direction of the rotor. Process liquid pushed to the inner wall of the vessel by ...

Energy Technology Data Exchange (ETDEWEB)

In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.

International Nuclear Information System (INIS)

Highly conductive biaxially textured RuO_2 thin films were deposited on technically important SiO_2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO_2 on SiO_2/Si. The biaxially oriented RuO_2 had a room-temperature resistivity of 37 #mu##OMEGA#-cm and residual resistivity ratio above 2. We then deposited Ba_0_._5Sr_0_._5TiO_3 thin films on RuO_2/IBAD-YSZ/SiO_2/Si. The Ba_0_._5Sr_0_._5TiO_3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society.

Energy Technology Data Exchange (ETDEWEB)

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}

International Nuclear Information System (INIS)

The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission electron microscopy images, showed that no systematic change had occurred. The results presented in this work suggest that the ...

Energy Technology Data Exchange (ETDEWEB)

In the nuclear power stations of GDR the rough radioactive waste includes borat-containing evaporator bottoms and spent ion exchanger resins. For its final disposal in deep geological formations (rock salt mines) this waste has to be solidified. The experience of one year lasting operation of a steam heated thin-film evaporator (heating surface 2 m{sup 3}) for evaporator bottoms to be solidified with a solid content of 200-250 g/l are reported on. In short time such amount of water is abstracted from the rough waste that due to the borate content a hot high-viscous product passes from evaporator to waste drum and there solidifies like glass to monolith. The product quality depends on the adjustment of the flow-equilibrium in the evaporator. Boric acid is used as matrix for the radioactive residues. The residual water content of the solidified waste product was about 15-20%, the volume reduction was V{sub f}=5...6. In order to be sure to get a solidified product a ...

International Nuclear Information System (INIS)

We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 #mu#m on SiO_2-Si substrate using 10-30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate substrate for optical, plasmonic and ...

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that ...

International Nuclear Information System (INIS)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide ...

Energy Technology Data Exchange (ETDEWEB)

A technique and a particular apparatus for an inductive measurement of critical currents as a function of temperature and magnetic field in thin-film superconductors are described. The technique has been found to be particularly useful for high-field A-15 compounds 2 to 3 ..mu..m thick. Samples with lower critical current densities would have to be correspondingly thicker to measure over the same broad range of temperature and field. The design of the apparatus is detailed showing that the film can be taken directly from the deposition chamber and mounted without electrical contacts so samples can be changed easily. The principles of operation are developed based on the Critical State Model. These principles are tested by measurements which verify that the measured value of critical curent is independent of the amplitudes and frequency of the small ac magnetic field which is added to a much larger quasistatic field. The inductive measurements are compared with ...

Energy Technology Data Exchange (ETDEWEB)

The growth of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films on top of Pt electrode substrates is an important issue for the fabrication of ferroelectric based memories. In a recent publication, SBT thin films grown using seeded and unseeded procedures were studied by PIXE and RBS. Difficulties and misfits found in the comparison of results from both techniques were, at that time, overcome by physical considerations. These, although not rendering interpretation impossible, left out the possibility of understanding the exact nature of the differences between the interface behavior in each case. In the present work it is shown that the reanalysis of the same data using the recently developed RBS-PIXE simultaneous and self-consistent calculation present in NDF leads to stronger conclusions on the solid state reaction occurring during the deposition stage for both types of samples. Allowing for the occurrence of solid state reactions between the ...

Science.gov (United States)

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates. PMID:17595151

Energy Technology Data Exchange (ETDEWEB)

Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO{sub 2} and ferroelectric Pb(Zr{sub 0.3},Ti{sub 0.7})O{sub 3} (PZT) gate insulators. The organic devices using SiO{sub 2} and PZT films had the field-effect mobility of approximately 0.1 and 0.004 cm{sup 2}/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO{sub 2} and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state.

International Nuclear Information System (INIS)

For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar"+ laser beam and a 30 keV Ga"+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10-100 #mu#m) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuO_x(130-150 C). For smaller dimensions (100 nm to 10 #mu#m) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6-7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5 x 10"7#OMEGA#/#square# to approximately 6 #OMEGA#/#square#). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force ...

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are explained by considering ...

International Nuclear Information System (INIS)

In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O_2 and CO, a typical ...

Science.gov (United States)

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra for thin-film samples composed of successive layers of uniform ...

CERN Document Server

Fourier Transform Infrared (FTIR) spectroscopy has been utilized during high rate E-beam evaporation/deposition of YBa2Cu3O7 (YBCO). The results demonstrate the great utility of FTIR as an in situ monitor of YBCO deposition and processing. We detect different (amorphous/fine polycrystalline) insulating pre-existing phases to the high Tc superconducting phase which appear to have distinct reflectivity fingerprints dominated by thin film interference effects, as a function of temperature and oxygen pressure. These fingerprints reveal some of the kinetic and thermodynamic pathways during the growth of YBCO.

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a ...

International Nuclear Information System (INIS)

Within about 10 years, microelectronic devices will be made with more than a billion (10"9) electronic components per chip. To implement such a sophisticated technology it will be essential to have a fundamental understanding of the solid state interaction between the different materials in thin film semiconductor structures. This is the main purpose of this research program. Characterization and analysis is carried out mainly by Rutherford backscattering spectrometry and channelling using accelerated nuclear particles from the Van de Graaff accelerator, while radioactive isotopes provide information about interaction mechanisms. 6 figs., 1 ref.

Energy Technology Data Exchange (ETDEWEB)

The lithium-polymer energy storage technology requires the production of thin films of huge surface. The BT-EdF-CEA consortium has studied the various manufacturing techniques of these films and their assembly. The process was chosen according to its productivity, low expensiveness, ecological impact and energy performances with capacities reaching 40 Ah. This paper explains: the objectives and specifications of the project, the advantage of the consortium and the role of the different partners, the results (coating, dry extrusion and battery element manufacturing techniques), and the electrochemical performances of the elements. (J.S.)

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Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Energy Technology Data Exchange (ETDEWEB)

Many organic compounds can be adsorbed onto the interface of a metal and solution to form a thin film that inhibits the corrosion process according to a blocking and/or negative catalytic effect. Using the Langmuir-Blodgett (LB) technique, stearic acid (SA) monolayers were deposited onto the surface of an iron (Fe) electrode to study the inhibition effect and the mechanism of SA in a neutral medium. Molecular orientation and the number of deposited monolayers of SA were shown to have marked effects on inhibition of Fe corrosion. The inhibition mechanism depended mainly on blocking.

British Library Electronic Table of Contents (United Kingdom)

Epitaxial thin films of nanotwinned face-centered cubic metals such as Cu possess an unprecedented combination of high hardness and high electrical conductivity due to the unique structure of nanometer-spaced coherent twin boundaries. Recent studies of in-situ nanoindentation in a transmission electron microscope have provided new insights on the deformation behavior of nanotwins that are reviewed here. In particular, two unit processes are highlighted: first, stress-induced migration of ?3 {112} incoherent twin boundary that leads to de-twinning of nanotwins; second, twinning dislocation can be multiplied at ?3 {111} coherent twin boundary.

CERN Document Server

A surface may provide a useful pumping action when able to retain adsorbed gas molecules for the duration of a given experiment. To fulfil this condition at room temperature, strong binding forces, as those resulting from chemical reactions, are required. Materials able to react with gases to form stable chemical compounds are called getters. The two main families of getters (evaporable and non-evaporable, or NEG) are presented and discussed. Special emphasis is placed on the NEG strips currently used for the vacuum systems of particle accelerators, and on the newly developed NEG thin-film coatings, in view of their possible future applications.

Energy Technology Data Exchange (ETDEWEB)

The half-metallic Heusler alloy Ni{sub 2}MnIn is of high interest for use in spin electronics since at the Ni{sub 2}MnIn/InAs interface a spin polarization of 100% is predicted. We prepare high-quality thin films of 20-60nm thickness by co-evaporation and DC magnetron sputtering. Point-contact Andreev reflection spectroscopy yields a spin polarization of up to 54%. By spectral generalized magneto-optical ellipsometry, the dielectric and magneto-optical properties are determined and ferromagnetic behavior below the Curie temperature T{sub C}=318K is proved.

Energy Technology Data Exchange (ETDEWEB)

This book describes the uses, coatings, and fabrication of laser materials. Topics considered include: optical waveguide materials; optical storage materials; holographic recording materials; phase conjunction materials; holographic recording materials; phase conjunction materials; laser crystals; laser glasses; quantum counter materials; thin films and coatings; multilayer dielectric coatings; graded-index surfaces and films; optical materials fabrication; fabrication techniques; fabrication procedures for specific materials.

International Nuclear Information System (INIS)

In one of the first uses of high Tc superconductors in an end-use product, Lake Shore Cryotronics and a Swiss lab have developed a liquid nitrogen level sensor using a high Tc thin film. The probe is manufactured using a seamless stainless steel tube with an yttrium-based zirconium oxide flame-sprayed on the tube. A plasma-sprayed superconductor compound is deposited on top of that. The probe is coated with a sealant that protects the superconducting film from the atmosphere. This manufacturing method has yielded an extremely durable product. Unaffected by ice formation and related mechanical problems, the superconducting level sensor can be kept in the dewar for long periods of time.

International Nuclear Information System (INIS)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint optical and thermal ...

Energy Technology Data Exchange (ETDEWEB)

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of hardness combined with ...

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 ...

CERN Document Server

Gamma-ray burst (GRB) is one of the candidates of high-energy cosmic-ray acceleration sites. They may be also ultra-high-energy (above 3 EeV) cosmic-ray (UHECR) sources. In this paper, we discuss possibilities and implications of high-energy cosmic-ray acceleration in GRBs. (1) First, we show that not only protons but also heavier nuclei can be accelerated up to ultra-high energies in both usual high-luminosity (HL) and low-luminosity (LL) GRBs by using the Geant4. LL GRBs may also make a significant contribution to the observed UHECR flux if they form a distinct population, and we investigate cosmic-ray acceleration in LL GRBs in detail. (2) Second, we discuss implications of the GRB-UHECR hypothesis (and Hypernova-UHECR hypothesis) to cosmic-ray astronomy. HL GRBs and LL GRBs will lead to different source number densities as UHECR sources, so that the determination of the number density of UHECR sources and strength of the mean extragalactic ...

Energy Technology Data Exchange (ETDEWEB)

We are investigating a novel insulator concept which involves the use of alternating layers of conductors and insulators with periods less than 1 mm. These structures perform many times better (about 1.5 to 4 times higher breakdown electric field) than conventional insulators in long pulse, short pulse, and alternating polarity applications. We present our ongoing studies investigating the degradation of the breakdown electric field resulting from surface roughness, the effect of gas pressure, and the performance of the insulator structure under bi-polar stress. Further, we present our initial modeling studies.

Energy Technology Data Exchange (ETDEWEB)

When searching for anisotropies in the arrival directions of Ultra High Energy Cosmic Rays, one must estimate the number of events expected in each direction of the sky in the case of a perfect isotropy. We present in this article a new method, developed for the Auger Observatory, based on a smooth estimate of the zenith angle distribution obtained from the data itself (which is essentially unchanged in the case of the presence of a large scale anisotropy pattern). We also study the sensitivity of several methods to detect large-scale anisotropies in the cosmic ray arrival direction distribution : Rayleigh analysis, dipole fitting and angular power spectrum estimation.

International Nuclear Information System (INIS)

Throughout the last decades, plasma technology has been established in a series of surface treatment applications, e.g. for semiconductor processing or optical coatings. The majority of plasma assisted technologies is based on low pressure processes. In recent years, however, non-thermal atmospheric pressure discharges have attracted considerable interest because of their simplified technical devices for industrial applications as compared to low pressure processes which require vacuum equipment. Hence, batch processing can be avoided, thus facilitating the implementation of plasma process steps into production lines. Investment costs are cut down significantly. The use of atmospheric pressure plasmas for technical applications dates back to the ozone production with dielectric barrier discharges (DBD) by Siemens in 1857. Lately, the application of atmospheric pressure plasmas for surface treatment has been reported, e.g. for the treatment of foils to improve printability, for surface ...

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

CERN Document Server

Consider the flow of a thin layer of non-Newtonian fluid over a solid surface. I model the case of a viscosity that depends nonlinearly on the shear-rate; power law fluids are an important example, but the analysis here is for general nonlinear dependence. The modelling allows for large changes in film thickness provided the changes occur over a large enough lateral length scale. Modifying the surface boundary condition for tangential stress forms an accessible base for the analysis where flow with constant shear is a neutral critical mode, in addition to a mode representing conservation of fluid. Perturbatively removing the modification then constructs a model for the coupled dynamics of the fluid depth and the lateral momentum. For example, the results model the dynamics of gravity currents of non-Newtonian fluids even when the flow is not very slow.

CERN Document Server

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are ...

International Nuclear Information System (INIS)

Spin-polarized angle-resolved sulfur L_2_,_3VV Auger-electron spectra have been recorded for the c(2x2)S/Fe(001) system. The data show the modulation of the sulfur Auger spin polarization as a function of emission angle, which represents an observation of spin-polarized Auger-electron diffraction (SPAED), a potentially powerful tool for the study of local magnetic structure at surfaces, interfaces, and thin films. Theoretical modeling of the SPAED data indicates a large decrease in the magnetization of the top iron layer, suggesting a magnetic poisoning induced by the sulfur overlayer. These findings are independently supported by the observation of a large decrease of secondary electron spin polarization upon sulfur adsorption.

International Nuclear Information System (INIS)

NiMnSb has attracted a great deal of interest as a spin injector/detector in spintronic devices because it has a Curie temperature of 728 K and is predicted to be half-metallic (100% spin polarized). NiMnSb has been reported to have greatly reduced surface polarization, and to lose its half metallicity above 80 K. Here we report the investigation of the surface polarisation and electronic structure of NiMnSb by measurement of the transport spin polarization using point contact Andreev reflection spectroscopy, and anomalous Hall effect in thin films on Si(0 0 1). A comparison to bulk properties is made.

CERN Document Server

In the beam pipe of the positron damping ring of the Next Linear Collider, electrons will be created by beam interaction with the surrounding vacuum chamber wall and give rise to an electron cloud. Several solutions are possible for avoiding the electron cloud, without changing the bunch structure or the diameter of the vacuum chamber. Some of the currently available solutions for preventing this spurious electron load include reducing residual gas ionization by the beam, minimizing beam photon-induced electron production, and lowering the secondary electron yield (SEY) of the chamber wall. We will report on recent SEY measurements performed at SLAC on TiN coatings and TiZrV non-evaporable getter thin films.

Energy Technology Data Exchange (ETDEWEB)

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

International Nuclear Information System (INIS)

A detergent-containing radioactive liquid waste originating from atomic power plants is concentrated to have about 10 wt. % detergent concentration, then dried in a thin film evaporator, and converted into powder. Powdered activated carbon is added to the radioactive waste in advance to prevent the liquid waste from foaming in the evaporator by the action of surface active agents contained in the detergent. The activated carbon is added in accordance with the COD concentration of the radioactive liquid waste to be treated, and usually at a concentration 2-4 times as large as the COD concentration of the liquid waste to be treated. A powdery product having a moisture content of not more than 15 wt. % is obtained from the evaporator, and pelletized and then packed into drums to be stored for a predetermined period.

Energy Technology Data Exchange (ETDEWEB)

The reduction of oxygen was studied in 0.1 M KCl at 70 deg. C using the rotating disk electrode (RDE) technique on platinum and electrodeposited ZnO thin film electrodes deposited on platinum substrates. In the absence of Zn{sup 2+} ions in solution, a Tafel slope of 139 mV dec{sup -1} was obtained, a value close to that measured on bare platinum electrode (133 mV dec{sup -1}) and ascribed to the limitation of the reaction rate by the first electron transfer. The main difference between the noble metal and the oxide electrode was a shift of the curves towards more negative potentials. In the presence of Zn{sup 2+} ions, the current density decreased significantly and the Tafel slope was measured at 282 mV dec{sup -1} showing that the electrode was partially blocked by zinc oxide formation reaction intermediates.

British Library Electronic Table of Contents (United Kingdom)

Thin films of Ni and Ni alloy have been widely used in microelectromechanical systems (MEMS) and magnetic storage systems. As the dimensions of components in these systems decrease to the micro-scale, even the nano-scale, the interfacial phenomena significantly differ to the counterparts on the macro-scale. A better understanding of micro-/nano-tribology will benefit the fabrication of the small components. In this manuscript parallel molecular dynamics (MD) simulations have been conducted to investigate the nanoscratch behavior of nickel. The simulations are performed for two cases with different indenter shapes. Case I has a sharp indenter, while the indenter in Case II is blunt. It has been found that the indenter shape significantly influences the nanoscratch deformation. The sharp ind...

International Nuclear Information System (INIS)

Purpose: To enable the solidification of liquid waste containing radioactive substance in a free shape with large volume reduction ratio without a pulverizing step by producing solute in the liquid waste as a slurry in a predetermined organic solvent and forming it into a cake by mechanical exfoliation. Method: Liquid waste containing suitably concentrated radioactive substances is supplied to a centrifugal thin film evaporator together with an organic agent having a higher boiling point than water and a non aqueous solution to evaporate the water content, the solute in the waste is produced as a slurry in the organic solvent, and removed as cake-state solute slightly residued with the organic solvent by the mechanical exfoliation such as centrifugal exfoliation or settling exfoliation from the slurry-state liquid. Accordingly, it can be increased in size as compared with the powder reduced in volume of the radioactive liquid waste, and can be ...

Energy Technology Data Exchange (ETDEWEB)

This study characterized selected commercial volume reduction technologies as to performance and associated costs. VR facility designs were developed for each of the reference VR technologies. Associated on-site storage requirements and cost were also determined. Eight VR technologies were selected for consideration: improved compactor; high pressure compactor (supercompactor); incinerator; fluid bed dryer and incinerator; evaporator crystallizer; evaporator extruder; mobile incinerator; and mobile thin-film evaporator. A representative facility design was developed for each VR technology and for several combinations of technologies. Thirteen separate cases are noted in the following table when retrofit and new facilities are considered.

Energy Technology Data Exchange (ETDEWEB)

A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.

Energy Technology Data Exchange (ETDEWEB)

By using megaelectronvolt /sup 4/He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd/sub 2/Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni/sub 2/Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.

International Nuclear Information System (INIS)

High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.

British Library Electronic Table of Contents (United Kingdom)

This paper aims to study fundamentally the impacts of membrane properties on the reactive dye removal from dye/salt mixtures by nanofiltration membranes. To begin with, two types of nanofiltration membranes of similar pore size, namely asymmetric cellulose acetate membrane and thin-film composite polyamide membrane were fabricated, and their key physical, chemical and performance properties were characterized. After that, these resultant membranes were employed to perform dye removal experiments with aqueous solutions of reactive black 5 and NaCl under different operational parameters. The dye removal rate and steady permeate flux were determined and correlated with the measured membrane properties. It was found that there were significant differences between the dye removal performances o...

CERN Document Server

Classic and recent results for gauge effects on the properties of the normal-to-superconducting phase transition in bulk and thin film superconductors are reviewed. Similar problems in the description of other natural systems (liquid crystals, quantum field theory, early universe) are also discussed. The relatively strong gauge effects on the fluctuations of the ordering field at low spatial dimensionality D and, in particular, in thin (quasi-2D) films are considered in details. A special attention is paid to the fluctuations of the gauge field. It is shown that the mechanism in which these gauge fluctuations affect on the order of the phase transition and other phase transition properties varies with the variation of the spatial dimensionality D. The problem for the experimental confirmation of the theoretical predictions about the order of the phase transitions in gauge systems is discussed.

International Nuclear Information System (INIS)

To sophisticate the nuclear fuel recycling processes, the transfer percentages for Pd, Mo, Te, and Sb should be determined. Each element solution containing NaNO_3 or HNO_3 was fed consistently into the thin film evaporator regulated in vac and at 50 deg C. The analyte percentages in the inside of the lid, in the condenser, and in the distillate were 10"-"1%/m"2, 10"-"3%/m"2, and 10"-"3% (DF = 10"5), respectively. The Mo percentage in the condenser was lower by a factor of 10 than those of other elements investigated. The NO_3"- percentages were nearly constant despite increasing HNO_3 concentrations, however, the ratios decreased with increasing NaNO_3 concentrations. (author)

British Library Electronic Table of Contents (United Kingdom)

To improve the friction and wear behavior of carbon fabric reinforced polymer composites (CFRP), nano-SiO2 was deposited on the fabric surface. The friction and wear behavior of the resulting composites were investigated on a model ring-on-block test rig. Experimental results revealed that fiber surface treatment contributed to largely improve the tribological properties of the CFRP composites. Scanning electron microscope (SEM) investigation showed that the worn surface of the surface modified CFRP composite was smoother under given load and sliding rate. Field emission scanning electron microscopy (FESEM), FTIR and X-ray photoelectron spectroscopy (XPS) studies of the carbon fiber surface showed that nanostructured Sio2 thin film can be obtained by SiO2 sols deposition, which improved th...

International Nuclear Information System (INIS)

Some results and experimental procedures of laboratory are reported in the frame of researches conducted for the development of new nanostructured composite materials. These new materials, which are constituted by an organic phase: the polymer and an inorganic phase: the silicate, are being strongly investigated nowadays so it is expected that they could provide, among other, better electrical insulation properties and flame-delay in electrical and electronic applications. The laboratory experimental work has been developed from two families of polymers, thermoplastics and thermosets and clays silicates providing lamellar type. There are now some preliminary results, such as obtaining thin films of these nanocomposite materials, their complete characterization by X-ray diffraction, scanning microscopy and thermogravimetric analysis, they do well to wait for future research activities. (author)

International Nuclear Information System (INIS)

Concentration profiles of passive films formed on electrolytically anodized niobium and niobium-base alloys are obtained by Auger Electron Spectroscopy with simultaneous ion beam etching. The alloys investigated include 5Zr-Nb, 3Zr-10Ti-Nb, 2.5Zr-2W-Nb, and 1Zr-5Mo-5V-Nb. Experiments demonstrate that AES is among the most fascinating techniques for solving various characterization problems related to the structure and composition of the thin films formed by anodization. Data presented supports evidence that combined anodic and cathodic movements take place during film growth. 11 figures.

DEFF Research Database (Denmark)

Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

Science.gov (United States)

The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

Energy Technology Data Exchange (ETDEWEB)

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200 {sup 0}C. A visible ...

Energy Technology Data Exchange (ETDEWEB)

Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until ...

International Nuclear Information System (INIS)

Microstructure and electrical properties of iron oxide Fe_2O_3 thin films prepared by spray pyrolysis method have been experimentally characterized. The effect of substrate temperature as well as deposition time on the structural features (crystallite size and microstrain) and electric resistivity of these films has been investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) characterized the structure study. The results of X-ray diffraction showed that with increasing substrate temperature bias the film structure changed from amorphous to crystalline at the same deposition time. At a substrate temperature of 350 deg. C and low deposition time, #alpha#-Fe_2O_3 appears almost in amorphous form. With rising the substrate temperature and deposition time, the crystallinity was improved. At T_s_u_b>350 deg. C, a well-crystallized rhombohedral phase of #alpha#-Fe_2O_3 was obtained. Single order Voigt profile method has been ...

Energy Technology Data Exchange (ETDEWEB)

Mild hydrotreating is the key to successful re-refining of used lubricating oils. Coupled with pre-distillation and metals removal, the process produces oil of superior color and clarity with acceptable viscosity and heteroatom content. Furthermore, the entire process provides operational simplicity, economic feasibility and environmental attractiveness. Re-refining preserves a valuable resource while solving a potential environmental problem. Increased sensitivity to disposal of hazardous material once again makes re-refining almost a necessity. Various technologies developed to re-refine used lubricating oils range from simple acid/clay contacting to complex solvent extraction. Most technologies require similar capital investment; however, operating costs vary substantially. Current technology seems to converge on a two-step procedure: distillation of dehydrated used oil in a thin-film evaporator, and subsequent hydrotreating of distilled stocks. Filtered used ...

Energy Technology Data Exchange (ETDEWEB)

The process operation of the hot wall vapor deposition method, formation of dry organic thin film and the control of molecular arrangement were described. This equipment included a substrate on the upper end of the hot wall tube and the vapor source at the lower end. The remarkable features are the hot wall tube which plays the role to hold vaporizing molecules to the high temperature and to transport molecules, and the flip flop mechanism which gives some idle period for the molecular vaporization by shutter closing. Several experiments were carried out by using stearic acid and by changing the distance S from the upper end of hot wall quartz tube to the substrate, the furnace temperature T{sub f} and the substrate temperature T{sub s}. When T{sub f} is equal to or less than the melting point of stearic acid, molectles are preferentialy made to vertical arrangement. In the case of T{sub f} more than the melting point, the molecular rate of the ...

International Nuclear Information System (INIS)

This paper deals with preparation of PE clay nano composite specimen for transmission electron microscopy (TEM) and studying the difference between dispersion of clay in low density polyethylene using poly(hydrogen methyl siloxane) (PHMS) as coupling agent and untreated one. Argon ion milling is the conventional means by which film sections are thinned to electron transparency for TEM analysis, but this technique exhibits significant problems. In particular, selective thinning and imaging of sub-micrometer inclusions during sample milling are highly problematic. We have achieved successful results using the focused ion beam (FIB) lift-out technique, which utilizes a 30 kV Ga"+ ion beam to extract electron transparent specimens with nanometer scale precision. Using this procedure, we have prepared a number of thin film materials representing a range of structures and compositions for TEM analysis. We believe that FIB milling will create major ...

Energy Technology Data Exchange (ETDEWEB)

Various methods for storing hydrogen have been examined in an effort to find ways to store hydrogen in increasingly smaller volumes with decreasing weight of the whole hydrogen storage system. Metal hydrides, in which hydrogen is chemically bound to a metal atom, are considered to be very promising candidates for hydrogen storage because they have high gravimetric and volumetric storage capacities. This study investigated the effect of different magnesium (Mg) and aluminium (Al) ratios on the absorption and desorption properties of thin films. Neutron reflectometry (NR) was used in this study to better understand the absorption and desorption properties of commercially promising hydrogen storage materials. The large negative scattering length of hydrogen atoms changes the reflectivity curve substantially, so that NR can determine the total amount of stored hydrogen as well as the hydrogen distribution along the film normal, with nanometer ...