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The authors present design methodology for high power microwave switches. Among all possible applications for such a switch they emphasize the design parameters for application to the pulse compression system associated with the Next Linear Collider (NLC). The switch is based on the excitation of a plasma layer within a silicon wafer by either a laser or an electron beam. They investigate problems associated with high power operation of such a switch. Mainly, they explore solutions to the problems of thermal runaway, avalanche breakdown, photo-emission, and secondary emission. Different design methodologies are presented.

Energy Technology Data Exchange (ETDEWEB)

A design of a compact free-electron laser (FEL), generating ultra-fast, high-peak flux, XUV pulses is presented. The FEL is driven by ahigh-current, 0.5 GeV electron beam from the Lawrence Berkeley National Laboratory (LBNL) laser-plasma accelerator, whose active acceleration length is only a few centimeters. The proposed ultra-fast source (~;;10 fs) would be intrinsically temporally synchronized to the drive laser pulse, enabling pump-probe studies in ultra-fast science. Owing to the high current (>10 kA) of the laser-plasma-accelerated electron beams, saturated output fluxes are potentially greater than 10^13 photons/pulse. Devices based both on self-amplified spontaneous emission and high-harmonic generated input seeds, to reduce undulator length and fluctuations, are considered.

Science.gov (United States)

... a rotating mirror Q-switch or an acousto-optic Q-switch. The former ... Q-switch up to 2000 pps. The Q-switched output bean, is predominantly ...

International Nuclear Information System (INIS)

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

Science.gov (United States)

... thus can function as switches -6 ... Akkari, "Optical Channel Waveguide Switch and Coupler ... Wide-Band Guided Wave Acousto-Optic Bragg Diffraction ...

Science.gov (United States)

PMID:19829557

Science.gov (United States)

... concentrated on the construction of switches using fiber ... been chosen for a switch realized in ... of these techniques using acousto-optic modulators or ...

Energy Technology Data Exchange (ETDEWEB)

Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be potential for use in optical storage, ultrahigh-density nanoscale memory and logic ...

Energy Technology Data Exchange (ETDEWEB)

The key to improving transmission-network security is faster response to contingencies. Now a new breed of pumped-storage plant - designed for ultra-fast response - may soon provide a tool dispatchers can use to improve network security. This type of plant can also substantially increase the effective capacity of existing transmission lines and improve the performance of thermal generating units. The Mt. Hope Waterpower Project, planned for Rockaway Township, NJ, 35 miles west of New York City, lies strategically adjacent to major load centers at the eastern end of the PJM control area and near the interconnection point with the New York Power Pool (NYPP). This location also is in an area deficient in significant generating facilities. Maximum design capacity of the project is 2000 MW, provided by six reversible pump/turbines, each with a nominal 340-MW rating. The upper reservoir, with a surface area of only 60 acres, provides 5000 acre-ft of active storage volume ...

Energy Technology Data Exchange (ETDEWEB)

Recognizing that a high percentage of transmission-line faults are single-phase to earth and temporary in nature, provides the impetus for considering single-pole switching as a means to enhance the reliability of EHV transmission systems. The effectiveness of single-pole switching schemes is largely determined by the speed with which the secondary arcs extinguish, and hence allow system restoration. Simulation techniques that enable better prediction of the faulted-system response are of obvious importance to the design and assessment of the various single-pole switching scheme applications. In this thesis, digital methods are developed to enable the faulted response of EHV systems to be simulated for a variety of different single-pole switching schemes. These include conventional single-pole switching, the hybrid method of autoreclosure, the neutral switched ...

Science.gov (United States)

The performance of a 42/28 V, 175 W, 50 kHz pulse-width modulated buck dc/dc switching power

Energy Technology Data Exchange (ETDEWEB)

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase ...

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British Library Electronic Table of Contents (United Kingdom)

This paper introduces a new way of estimating parameters in a Brownian motion regime switching asset model to incorporate volatility clustering. The regime switching model is then applied to pricing of up-and-in barrier call options. We take the probability of crossing the barrier between simulation points into account, and we increase accuracy in simulations by importance sampling. The regime switching model is compared to the Normal Inverse Gaussian model and the traditional Black-Scholes model, and option prices from the regime switching model are compared to the closed form expression of up-and-in barrier calls in a Black-Scholes market.

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

CERN Multimedia

"Force20 networks, the pioneer in building and securing reliable networks, today announced that the University of Tennessee physics department has deployed the C300 resilient switch to analyze data form CERN's Large Hadron Collider." (1/2 page)

British Library Electronic Table of Contents (United Kingdom)

We investigate the default time of a firm when a stochastic discount factor is used so that both diffusion and regime switching risks are priced. We establish the relationship between the probability distribution of the default time and the solution of a system of coupled partial differential equations.

Science.gov (United States)

... Abstract : MANY THIN FILM ACOUSTO-OPTIC INTERACTION EXPERIMENTS FOR ... CONVERTERS, AND FOR FAST SWITCHES HAVE BEEN ...

Science.gov (United States)

... the application of an acousto- optical tunable filter ... Couplers for Large Switch-Array Applications ... Symmetric Integrated Optic X Junction," Electronics ...

Science.gov (United States)

... Acousto-optic programmable dispersive filters (AOPDF) have been developed for optical signal processing, polarization switching in lasers, and ...

KoreaScience (Korea)

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Solutions have been found for the problems encountered with the coil power and switching systems of the International Fusion Superconducting Magnet Test Facility (IFSMTF). The coil power system provides the filtered dc sources (+- 12 V dc; 25,000 A) for charging and discharging the coils of the IFSMTF experiment. The switching system provides the means of transferring the coil current into a dump resistor when a rapid discharge of a coil is required due to a coil failure (quench) or other system abnormalities.

Energy Technology Data Exchange (ETDEWEB)

A compact proton accelerator for medical applications is being developed at Lawrence Livermore National Laboratory. The accelerator architecture is based on the dielectric wall accelerator (DWA) concept. One critical area to consider is the switch region. Electric field simulations and thermal calculations of the switch area were performed to help determine the operating limits of rmed SiC switches. Different geometries were considered for the field simulation including the shape of the thin Indium solder meniscus between the electrodes and SiC. Electric field simulations were also utilized to demonstrate how the field stress could be reduced. Both transient and steady steady-state thermal simulations were analyzed to find the average power capability of the switches.

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

Energy Technology Data Exchange (ETDEWEB)

An improved lockout assembly for locking a circuit breaker in a selected off or on position is provided. The lockout assembly includes a lock block and a lock pin. The lock block has a hollow interior which fits over the free end of a switch handle of the circuit breaker. The lock block includes at least one hole that is placed in registration with a hole in the free end of the switch handle. A lock tab on the lock block serves to align and register the respective holes on the lock block and switch handle. A lock pin is inserted through the registered holes and serves to connect the lock block to the switch handle. Once the lock block and the switch handle are connected, the position of the switch handle is prevented from being changed by the lock tab bumping up against a stationary housing portion of the circuit breaker. When the lock pin installed, an ...

Science.gov (United States)

A previous paper introduced the use of wave digital filters as a basic building block for power system simulation, particularly suitable for real-time applications. This paper stresses the simulation of non-linear and switching elements, emphasizing the advantages of the wave filters implementation. The digital structure is maintained even when non-linear components change their characteristics or power electronic devices switch their states. As a very important by-product, the suppression of numerical oscillations related to the trapezoidal rule is achieved in a rather simple way, with no effects on simulation results.

Energy Technology Data Exchange (ETDEWEB)

The possibility of switching the heat transfer consists of varying heat transfer surfaces and making the heat transfer temporarily more intensive. Heat tubes prove to be particularly suitable, which must be exposed to a heat carrier fluid or removed from its effect for switching the heat transfer. This report gives a survey of the possibilities of switching heat flows and for making the heat transfer more intensive. Further, the report contains a survey of patents limited to heat transfer in the fields of cooling internal combustion engines and exhaust systems. (orig.) With 17 figs., 183 refs.

International Nuclear Information System (INIS)

Non-linear autoregressive Markov regime-switching models are intuitive. Time-series approaches for the modelling of electricity spot prices are frequently proposed. In this paper, such models are compared with an ordinary linear autoregressive model with regard to their forecast performances. The study is carried out using German daily spot-prices from the European Energy Exchange in Leipzig. Four non-linear models are used for the forecast study. The results of the study suggest that Markov regime-switching models provide better forecasts than linear models. (author)

CERN Document Server

We study the all-optical time-control of the strong coupling between a single cascade three-level quantum emitter and a microcavity. We find that only specific arrival-times of the control pulses succeed in switching-off the Rabi oscillations. Depending on the arrival times of control pulses, a variety of exotic non-adiabatic cavity quantum electrodynamics effects can be observed. We show that only control pulses with specific arrival times are able to suddenly switch-off and -on first-order coherence of cavity photons, without affecting their strong coupling population dynamics. Such behavior may be understood as a manifestation of quantum complementarity.

Energy Technology Data Exchange (ETDEWEB)

The authors address the question of the limitations on voltage and current transfer to loads in magnetic storage systems utilizing microsecond conduction time plasma opening switches. They propose that the limitation of performance results from neutral atoms that are not entrained into the ionized material that is driven by the magnetic field of the rising generator current. Evidence in support of this proposition is gathered from experiments performed on the Ace-4 and Hawk generators. They set forth a theory to describe the effect of neutrals on the electrical performance of plasma opening switches. The neutral gas is assumed to be present in the region between the moving plasma mass and the generator, primarily in the region in which the plasma is injected initially. The essential elements of the theory are a weak photoionization source to seed the gas with a low concentration of electrons, and joule heating accompanied by further ionization ...

Science.gov (United States)

... electronic feedback system' connected to a Q switch ... The use of acousto-optic (AO) beam steering devices for BMDO (SDI) applications is very ...

British Library Electronic Table of Contents (United Kingdom)

Multi-fiber WDM networks are becoming the major telecommunication platforms for transmitting exponentially increasing data traffic. While today's networks are mainly providing circuit-switched connections, optical packet-switching technologies have been investigated for years, aiming at achieving more efficient utilizations of network resources. In this paper, we have evaluated, for the first time, the packet-loss performance of multi-fiber optical packet switches (MOPS). Our main contributions are threefold. Firstly, we have proposed simple and accurate analytical models for analyzing packet-loss performance of (i) the most fundamental MOPS configuration, (ii) MOPS equipped with fiber delay lines (FDLs) and (iii) shared wavelength converters (SWCs). Secondly, we have shown that the MOPS n...

Science.gov (United States)

... is a standard in the utility industry which is used to study switching transients on power distribution networks and high-voltage transmission lines. ...

British Library Electronic Table of Contents (United Kingdom)

This study looks for the presence of rational speculative bubbles in Real Estate Investment Trusts (REITs) using unit-root, variance ratio, duration dependence and regime switching regression tests. The regime switching method provides weak evidence of speculative bubble behaviour in both the mortgage and hybrid REITs sectors even though traditional econometric bubble tests do not provide evidence of rational speculative bubbles in all REIT markets. Findings suggest that price movement in mortgage and hybrid REITs may be induced by bubble-like behaviour of investors. This behaviour may be traced to the real estate market bubble. Our results provide evidence that the real estate bubble that started in early 2000 was transmitted into securitized real estate markets. A regime switching model ...

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

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International Nuclear Information System (INIS)

... defects doped materials germanium infrared radiation monocrystals neutron

Energy Technology Data Exchange (ETDEWEB)

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

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Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

Energy Technology Data Exchange (ETDEWEB)

This report describes the test of a dynamic phase compensation unit for a wind turbine with directly connected induction generators. The compensation unit is based on thyristor switched capacitors, where conventional wind turbine compensations use mechanical contactors to switch the capacitors. The influence on power quality analysed, and influence on component lifetime is discussed. Besides, simulation models in Matlab/Simulink are presented, including a flicker meter model. (au)

Energy Technology Data Exchange (ETDEWEB)

An electrical circuit testing device is provided, comprising a case, a digital voltage level testing circuit with a display means, a switch to initiate measurement using the device, a non-shorting switching means for selecting pre-determined electrical wiring configurations to be tested in an outlet, a terminal block, a five-pole electrical plug mounted on the case surface and a set of adapters that can be used for various multiple-pronged electrical outlet configurations for voltages from 100 600 VAC from 50 100 Hz.

Energy Technology Data Exchange (ETDEWEB)

A lock out assembly for a circuit breaker which consists of a generally step-shaped unitary base with an aperture in the small portion of the step-shaped base and a roughly S shaped retaining pin which loops through the large portion of the step-shaped base. The lock out assembly is adapted to fit over a circuit breaker with the handle switch projecting through the aperture, and the retaining pin projecting into an opening of the handle switch, preventing removal.

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

Energy Technology Data Exchange (ETDEWEB)

This work presents the development of a streak camera 'jitter free' sweep unit synchronized on a femtosecond laser. This application of high voltage photoconductive switches ('High voltage Auston switch') yields subpicosecond resolution for accumulated images on streak camera on a few hundreds micro joule femtosecond laser. Two others applications of these photoconductive switches are studied: - ultrafast optical commutation by a Pockels cell directly driven by a photoconductive switch (rising edge < 100 ps and jitter < 2 ps), - laser pulse energy self-stabilization experimentally proving that driving a Pockels cell by a photoconductive switch can increase the stability of the laser pulse energy from 7 % to 0.7 % rms. Additionally, the application of the acoustic-optical programmable dispersive filter (Dazzler) to the self referenced ...

Energy Technology Data Exchange (ETDEWEB)

Estimates of annual rates of change of fuel switching are constructed using logistic curve models fitted to often sparse historical data on fuel use in the USA. The estimated annual rate of loss of market share of an old fuel is then shown to be correlated with five-year averages of declines in the rate of growth of affected vehicle numbers. Other statistical tests show a positive correlation between five-year average changes in the rate of growth of the vehicle numbers and of macroeconomic activity when the affected vehicles are directly responsible for a large share of that activity. The vehicle types shown to have this effect are locomotives from 1885-1915 and automobiles thereafter. The third set of tests supports an interpretation that the indirect effects of fuel switches are significant and consistent with GNP throughout the 1880-1980 period. It is shown that a pronounced drop in GNP growth occurs at the time when the important fuel ...

CERN Document Server

A few papers have been interested by the fixed switching frequency direct torque control fed by direct matrix converters, where we can find just the use of direct torque controlled space vector modulated method. In this present paper, we present an improved method used for a fixed switching frequency direct torque control (DTC) using a direct matrix converter (DMC). This method is characterized by a simple structure, a fixed switching frequency which causes minimal torque ripple and a unity input power factor. Using this strategy, we combine the direct matrix converters advantages with those of direct torque control (DTC) schemes. The used technique for constant frequency is combined with the input current space vector to create the switching table of direct matrix converter (DMC). Simulation results clearly demonstrate a better dynamic and steady state performances of the proposed method.

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

Energy Technology Data Exchange (ETDEWEB)

We report on the software aspects of the development of a switch-based data acquisition system at Fermilab. This paper describes how, with the goal of providing an integrated systems engineering'' environment, several powerful software tools were put in place to facilitate extensive exploration of all aspects of the design. These tools include a simulation package, graphics package and an Expert System shell which have been integrated to provide an environment which encourages the close interaction of hardware and software engineers. This paper includes a description of the simulation, user interface, embedded software, remote procedure calls, and diagnostic software which together have enabled us to provide real-time control and monitoring of a working prototype switch-based data acquisition (DAQ) system.

British Library Electronic Table of Contents (United Kingdom)

In areas where grid connection is difficult and costly, the use of renewable energy is both economically and environmentally advantageous. Due to typically low system efficiency (10%) and intermittency of photovoltaic (PV) electricity generation, a new design of multi-level H-bridge inverter technology is considered. This multi-level technology increases DC to AC conversion efficiency and the design includes battery energy storage to enable 24/7 operation. The proposed multi-level inverter is compared and contrasted with other existing designs. The proposed cascaded inverter provides lower switching losses, simple switching techniques, modularity, and simpler charge-balancing approaches than conventional technology. A switching technique was designed for the proposed multi-level inverter t...

Energy Technology Data Exchange (ETDEWEB)

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

International Nuclear Information System (INIS)

Energy harvesting systems stimulate the development of power management for low power consumption applications. Improving the converter efficiency of power management circuits has become a significant issue in energy harvesting system design. This paper presents a variable step-down conversion ratio switched capacitor (SC) DC-DC converter to advance the converter efficiency of charge on the stored capacitor in a wireless monitoring system of orthopedic implants. The converter is designed to work at 1 MHz switching frequency and achieves 15 to 2 V conversion. Measurement results show that the converter efficiency can reach 42% including all circuit power consumption, which is much higher than previous work. (semiconductor integrated circuits)

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

Energy Technology Data Exchange (ETDEWEB)

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

Science.gov (United States)

PLZT-7/65/35 is a ferroelectric ceramic with strong electrooptic properties and memory; it is switched through transparent electrodes when mechanically strained. Matrix addressed x-y page composers for interfacing electrical and coherent optical systems are being fabricated with PLZT. Switching voltages are 50-300 V. Optical efficiencies greater than 40% have been achieved. Strains near 2.4 x 10(-3) mm/mm permit half-wave retardation switching in 100-micro-thick plates with 80-V read-in and 190-V erase levels (60 Hz hysteresis data). A 128 x 128 element array can operate at 10(7) bits/sec with 10-microsec switching in a row at a time mode. Half-select disturbances affect contrasts. Applications in displays are also feasible. PMID:20111514

Energy Technology Data Exchange (ETDEWEB)

Airborne pollutants can cause failures in switching and computing equipment. This paper focuses on a subset of such pollutants - airborne fine particles (<2.5 [mu]m diameter). It begins by examining the extent to which different improvements in heating, ventilating and air conditioning (HVAC) systems reduce indoor concentrations of fine particles. For each modification, the consequent reduction in soiling rate is derived. The concomitant increase in operating costs is also calculated. These costs are then compared with the costs of failures in telephone switching offices, leading to estimates of failure rate reductions that would make improvements cost-effective. Finally, the reduction in failures required to offset the costs of the improvements are compared with documented differences in failure rates between unimproved and improved environments. This study suggests that, in many telephone switching offices, the added ...

UK PubMed Central (United Kingdom)

Numerical calculations of static, switched, and radiofrequency (RF) electromagnetic (EM) fields considering the geometry and EM properties of the human body are used increasingly in MRI to explain...Full Text Available

Science.gov (United States)

Upon illumination of an optically driven Q-switch 35 over conventional electro- optic, acousto-optic and medium located inside the laser cavity with an ...

CERN Document Server

This paper presents and implements an iterative feedback design algorithm for stabilisation of discrete-time switched systems under arbitrary switching regimes. The algorithm seeks state feedback gains so that the closed-loop switching system admits a common quadratic Lyapunov function (CQLF) and hence is uniformly globally exponentially stable. Although the feedback design problem considered can be solved directly via linear matrix inequalities (LMIs), direct application of LMIs for feedback design does not provide information on closed-loop system structure. In contrast, the feedback matrices computed by the proposed algorithm assign closed-loop structure approximating that required to satisfy Lie-algebraic conditions that guarantee existence of a CQLF. The main contribution of the paper is to provide, for single-input systems, a numerical implementation of the algorithm based on iterative approximate common eigenvector ...

Energy Technology Data Exchange (ETDEWEB)

Two types of switched electrode electronics beam position monitors are in use at Jefferson Lab. Together they provide accurate beam position to the control system for beam intensities between 50 nA and 2 mA. One version, called the linac style, has a switching frequency of 125 kHz. The other, called the transport type, has a switching frequency of 7 kHz. The basic system provides information to the control system at a 1 Hz update rate. The systems are regularly used to measure the AC component of beam position and energy as well as suppress this motion as part of a fast feedback system. Position data produced by the system are also acquired on an event by event basis as part of the nuclear physics program in two of the experimental halls. This paper will focus on the AC characteristics of the system. These characteristics are affected by analog filter frequencies and a time delay between the measurement of the positive ...

Science.gov (United States)

... Steady State 16.0-28.0 5.05 to 5.36 0 Key switch turned on. ... version may have been the better choice since the acousto-optic modulator also ...

UK PubMed Central (United Kingdom)

Escherichia coli infection of the endometrium causes uterine disease after parturition and is associated with prolonged luteal phases of the ovarian cycle in cattle. Termination...Full Text Available

International Nuclear Information System (INIS)

An optical klystron is built in the 800 MeV electron storage ring at University of Science and Technology of China for harmonic super-radiation generation. In single bunch operation mode the repetition rate of the spontaneous radiation pulses is about 4.533 MHz, and the repetition rate of the seed laser pulses is about 3 Hz, while the radiation pulse duration is 300 ps. For measuring harmonic radiation a high on/off ratio ICCD is used as an optical switch to reject spontaneous radiation pulses of high repetition rate

Energy Technology Data Exchange (ETDEWEB)

The reliability of an electrical power system is influenced by the operation of circuit-breaker (CB). A good indicator of circuit-breaker condition is its switching time. Based on it some of the critical circuit-breaker irregularities can be detected and removed before they develop to a failure. In this paper, the evaluation of time measurements (timings) in case of different failures will be carried out for two circuit-breaker solutions, i.e. with spring and hydraulic drive. Moreover, the relationships between switching time and failure type/location will be derived. Thereby, the influence of failure trend will also be taken into account. (author)

Science.gov (United States)

A dc-to-dc converter has been designed which employs the synchronizing phenomenon in the transistor core multivibrator. In the proposed circuit, the voltage feedback is applied from the control transistor and the current feedback is applied from the main transistor. The operation of the converter is analyzed by the averaging method of the state space technique. The converter features small switching loss and is suitable for high frequency operation. An efficiency of more than 95% is obtained for 5 V, 3 A output at a switching frequency of 200 kHz.

Energy Technology Data Exchange (ETDEWEB)

This paper presents the analysis and novel hybrid controller design for an interleaved 2-quadrant switched capacitor (SC) bidirectional DC/DC converter for a hybrid electric vehicle (HEV) dual energy storage system. The designed novel control strategy enables simpler dynamics compared to a standard buck converter with input filter, good regulation capability, low EMI, lower source current ripple, ease of control, and continuous input current waveform in both buck as well as boost modes of operation.

Energy Technology Data Exchange (ETDEWEB)

The magnetoresistance in an FeNi submicron-structure comprising two wires of 80 and 200 nm in width connected in series was measured at 77 K. When the external magnetic field was applied parallel to the wire axis, two switching fields corresponding to the distinct coercive force of the two wires were observed. When the external magnetic field was applied at an angle of {theta}>30 deg. to the wire axis one switching field was observed, indicating simultaneous magnetization reversal in both wires. This indicates that the domain-wall trapping around the joint can be controlled systematically in terms of the direction of the external magnetic field.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

Energy Technology Data Exchange (ETDEWEB)

This thesis examines the design of a propulsion system for a series hybrid vehicle and includes the study of an energy storage unit using double-layer capacitors and a lightweight soft-switched converter system, and two new components in series hybrid vehicles. The development of environmentally sustainable vehicles is more urgent now given the fact that pollution levels are ever increasing. No electric vehicle has yet been developed that can compete with a normal vehicle based only on internal combustion engines. The dilemma lies in the difficulty of storing the amount of energy needed and supply it a high power levels. An attractive and viable option to reducing pollution and maintaining good performance may lie in hybrid electric-powered vehicles. The double-layer power capacitors are an interesting option because of their high power density and long lifetime. The devices are new and assembling large energy storage units must be thoroughly examined before using ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

Energy Technology Data Exchange (ETDEWEB)

Power quality problems are caused by activities normal to utility operations such as maintenance outages and capacitor switching or events that are abnormal such as lightning strikes and equipment failures. Disconnection and reconnection of transmission lines and transformers can cause switching surges, and are more severe on extra high voltage transmission lines than high voltage lines. Capacitor switching can cause transients and harmonics that may affect sensitive equipment, and are the source of 3rd, 5th, 7th and 9th harmonics in the hundreds of hertz ranges. Overload, sudden loss of generating capacity and transmission line faults are typical problems affecting system stability. Fault interruptions and reclosings can cause surges in the distribution system, and lightning strikes may cause voltage surges or dips due to arrester sparkover. Blackouts, brownouts, voltage fluctuations, travelling wave overvoltages, ...

DEFF Research Database (Denmark)

This paper presents a new method to improve sensorless performance of matrix converter drives using a parameter estimation scheme. To improve low-speed sensorless performance, the non-Iinearities of a matrix converter drive such as commutation delays, turn-on and turn-off times of switching devices, and on-state switching device voltage drop is modelled using PQR transformation and compensated using a reference current control scheme. To eliminate the input current distortion due to the input voltage unbalance, a simple method using PQR transformation is also presented. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system without a speed sensor. Experimental results are shown to illustrate the feasibility of the proposed strategy.

Energy Technology Data Exchange (ETDEWEB)

The Advanced Networking Integration Department at Sandia National Laboratories has used the annual Supercomputing conference sponsored by the IEEE and ACM for the past three years as a forum to demonstrate and focus communication and networking developments. For Supercomputing `95, Sandia elected: to demonstrate the functionality and capability of an AT&T Globeview 20Gbps Asynchronous Transfer Mode (ATM) switch, which represents the core of Sandia`s corporate network, to build and utilize a three node 622 megabit per second Paragon network, and to extend the DOD`s ACTS ATM Internet from Sandia, New Mexico to the conference`s show floor in San Diego, California, for video demonstrations. This paper documents those accomplishments, discusses the details of their implementation, and describes how these demonstrations supports Sandia`s overall strategies in ATM networking.

Energy Technology Data Exchange (ETDEWEB)

Ways of reducing energy consumption in plastics processing are examined. Examples are given which illustrate how the awareness of everyone in the company to energy saving is essential with particular reference to switching arrangements to ensure such things as lights, machinery, compressed air systems are switched off when not needed or run at a lower level where appropriate. An understanding of the various elements of the electricity bill can inform a company`s planning of its operations to take advantage of lower tariffs. Machinery selection both with regard to efficiency of processing, quality of engineering and appropriate size can achieve significant savings and attention to maintenance is important. Fundamental to all aspects of energy saving is the monitoring of energy usage to identify where savings can be made and to evaluate the effectiveness of any measures taken. (UK)

Science.gov (United States)

An analysis is made of the basic principles and methods of construction of integrated optical circuits (IOC) for data processing, which are optical waveguide processors in the integrated form. A classification is provided of IOC in accordance with the nature of the input connections to optical components and in accordance with their intended function. An analysis is made of the current status of research and development of analog IOC for handling analog and digital signals, IOC for computing technology, and switching IOC. A detailed analysis is made of IOC with different functions in data processing: spectrum analyzers and correlators, analog-digital converters, circuits for identification of data sets and for encoding of signals, threshold and multistable circuits, logic and arithmetic units, and switching arrays. Descriptions are given of IOC for optically controlled data handling: bistable purely optical logic circuits, multivibrators, ...

Energy Technology Data Exchange (ETDEWEB)

In this effort, the nonlinear responses and stability of a spindle system supported by ball bearings are presented. The dynamics of this system is described by a set of second order differential equations with a nonlinear piecewise smooth force. The Floquet theory is applied to investigate the stability of the periodic solution. Due to the loss of contact between the raceways and balls in the ball bearing, the bending of the frequency response curves switch to the left at the weak resonance region, which is similar to the frequency response curves of a system with a soft spring. With the decrease of the bearing clearance, the bending of the frequency response curves switch to the right, which is similar to the frequency response curves of a system with a hard spring. Increase of the frequency ratio, the bending of frequency response curves transforms from left to right. The route to chaos through a period doubling process is also observed in ...

International Nuclear Information System (INIS)

This Letter reports the first experimental results from the world's first distributed optical-klystron (DOK) free-electron laser (FEL), the DOK-1 FEL, at Duke University. The DOK-1 FEL is a hybrid system, comprised of four wigglers: two horizontal and two helical. With the DOK-1 FEL, we have obtained the highest FEL gain among all storage ring based FELs at 47.8% (#+-#2.7%) per pass. We have also demonstrated that the FEL gain can be enhanced by increasing electron bunching using wigglers with a different polarization. Furthermore, we have realized controlled polarization switches of the FEL beam by a nonoptical means through the manipulation of a buncher magnet.

DEFF Research Database (Denmark)

This paper presents a new method to compensate the nonlinearities for matrix converter drives. The nonlinearities of matrix converter drives such as commutation delay, turn-on and turn-off time of the switching devices, and on-state switching device voltage drop is corrected by a new matrix converter model using the direction of current. The proposed method does not need any additional hardware or complicated software and it is easy to realize by applying the algorithm to the conventional vector control. The proposed compensation method is applied for high-performance induction motor drives using a 3-kW matrix converter system without a speed sensor. Experimental results show the proposed method provides good compensating characteristics.

International Nuclear Information System (INIS)

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

Science.gov (United States)

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

International Nuclear Information System (INIS)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...

UK PubMed Central (United Kingdom)

We report a pH-dependent conformational transition in short, defined homopolymeric deoxyadenosines (dA₁₅) from a single helical structure with stacked nucleobases at neutral pH to a double-helical,...Full Text Available

Wastenet

... The dawn of Bio-Mecha and a Biomechanical Revolution May 31 2011: Hi Julian, Yes, but i dont think we would ... The dawn of Bio-Mecha and a Biomechanical Revolution May 31 2011: A BBC Documentary: All Watched Over by Machines of Loving ... The dawn of Bio-Mecha and a Biomechanical Revolution May 17 2011: Ed Boyden: A light switch for neurons is an amazing ... The dawn of Bio-Mecha and a Biomechanical Revolution May 16 2011: Thank you Meher Like Spring Rabbit, its a great contribution....

UK PubMed Central (United Kingdom)

The luminescent characteristics of Ru(bpy)₂dppz²⁺ (dppz = dipyrido[3,2-a:2′,3′-c]phenazine), a DNA light switch, were...Full Text Available

Environmental Research Database

DescriptionThe switch from production-linked to environmental payments has focussed attention on the environmental impacts of farming. There is a growing awareness of the need to reduce the contamination of air with carbon dioxide, methane, ammonia and nitrogen gases (which contribute to the greenhouse effect) and to prevent the contamination of soil and water with excessive amounts of nitrogen, phosphorus and potassium. As beef production moves to become more sustainable and fully integrated with the wide [continued...

Energy Technology Data Exchange (ETDEWEB)

Special Issue on Automotive Bearings and Applicable Products; Reports include Performance of Ceramic Cam Roller Follower for Automotive Engine; Performance of Drawn Cup Needle Roller Bearing for Propellershaft; Plastic Bearing Retainer for High Temperature Oil Lubrication; Bearing Device for Vehicle Axle; and Flush Mounting Type Programmable Cam Switches.

Energy Technology Data Exchange (ETDEWEB)

A gas-diesel dual fuel engine apparatus is described having a diesel engine, a diesel fuel supply system including a diesel fuel injection pump, a gaseous fuel supply system including a gaseous fuel regulating valve, and a governing and controlling device for governing the speed of the engine through the control of fuel supplied to the engine and controlling the switchover of the operation of the engine between a diesel fuel mode and a gaseous fuel mode. The improvement of the governing and controlling device consists of: (a) at least one electronic governor means adapted to compare a speed signal representing the actual operating speed of the diesel engine with a set speed signal representing the set speed thereof; (b) a pair of electric actuator means having respective power amplifier circuits and mechanically connected to the diesel fuel injection pump and the gaseous fuel regulating valve, respectively, for the actuation thereof; (c) mode switching control ...

CERN Document Server

Predictions and measurements of a multimode waveguide interferometer operating in a fibre coupled, ``dual-mode'' regime are reported. With a 1.32 micrometer source, a complete switching cycle of the output beam is produced by a 10.0 nanometer incremental change in the 8.0 micrometer width of the hollow planar mirror waveguide. This equates to a fringe spacing of $\\sim\\lambda /130$. This is an order of magnitude smaller than previously reported results for this form of interferometer.

Energy Technology Data Exchange (ETDEWEB)

The physical layout of the Time-Of-Flight spectrometer at the new spallation source SINQ is presented. The concept shows up a hybrid-TOF combining a Fermi-chopper with a crystal monochromator. The demand of a versatile and flexible instrument for several applications is taken into account by the option of switching from time-focusing to monochromatic focusing mode such that the spectrometer can be optimised for both quasielastic and inelastic scattering applications. (author) 5 figs., 2 tabs., 16 refs.

CERN Document Server

Families of regimes for discrete control systems are studied possessing a special quasi-controllability property that is similar to the Kalman controllability property. A new approach is proposed to estimate the amplitudes of transient regimes in quasi-controllable systems. Its essence is in obtaining of constructive a priori bounds for degree of overshooting in terms of the quasi-controllability measure. The results are applicable for analysis of transients, classical absolute stability problem and, especially, for stability problem for desynchronized (asynchronous, switching) systems.

Energy Technology Data Exchange (ETDEWEB)

Some motor operated valves now have higher torque switch settings due to regulatory requirements to ensure valve operability with appropriate margins at design basis conditions. Verifying operability with these settings imposes higher stem loads during periodic inservice testing. These higher test loads increase stresses in the various valve internal parts which may in turn increase the fatigue usage factors. This increased fatigue is judged to be a concern primarily in the valve disks, seats, yokes, stems, and stem nuts. Although the motor operators may also have significantly increased loading, they are being evaluated by the manufacturers and are beyond the scope of this study. Two gate valves representative of both relatively weak and strong valves commonly used in commercial nuclear applications were selected for fatigue analyses. Detailed dimensional and test data were available for both valves from previous studies at the Idaho National Engineering ...

UK PubMed Central (United Kingdom)

Immature seeds of castor bean (Ricinus communis) removed from the capsule at 25 to 40 days after pollination (25-40 DAP) and placed in an atmosphere of high relative humidity undergo...Full Text Available

Science.gov (United States)

A description is given of an automatic liquid nitrogen pumping system. Pamping of liquid nitrogen iato cooling traps up to a predetermined level is achieved by an automatically controlled compressed air system. An impontant feature of the equipment is the ability to switch automatically from an empty liquid nitrogen reservoir to a full one. This allows for a much more flexible operation than in conventional systems where the reservoir has to be replaced manually when empty. (auth)

UK PubMed Central (United Kingdom)

To understand how DEXD/H-box proteins recognize and interact with their cellular substrates, we have been studying Prp28p, a DEXD/H-box splicing factor required for switching the U1 snRNP with the U6...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

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A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

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We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}

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The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}

International Nuclear Information System (INIS)

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

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Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

Science.gov (United States)

A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).

International Nuclear Information System (INIS)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.

International Nuclear Information System (INIS)

The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.

International Nuclear Information System (INIS)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

British Library Electronic Table of Contents (United Kingdom)

An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

Energy Technology Data Exchange (ETDEWEB)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...

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By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.

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An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

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Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...

Science.gov (United States)

twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...

Energy Technology Data Exchange (ETDEWEB)

The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

Science.gov (United States)

... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...

International Nuclear Information System (INIS)

Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.

International Nuclear Information System (INIS)

An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.

Science.gov (United States)

of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...

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This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.

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Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.

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One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.

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It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

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Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).

Science.gov (United States)

The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.

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Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

Energy Technology Data Exchange (ETDEWEB)

This paper analyses the complex, non-linear effects of spot price drivers in wholesale electricity markets: their intra-day dynamics and transient irregularities. The context is the UK market, after the reforms introduced in March 2001, analysed with an original set of price drivers reflecting economic, technical, strategic, risk, behavioural and market design effects. Models are estimated separately as daily time-series of the 48 half-hourly trading periods. All coefficients exhibit substantial intra-day variation, relating to the heterogeneity of operating plants and market design aspects. This reveals a market responding to economic fundamentals and plant operating properties, with learning and emergent financial characteristics, as well as some strategic manipulation of capacity, most effectively exercised by the more flexible plants. Using regime-switching parameters, the effects of capacity margin and inter-day capacity adjustment are elucidated, suggesting ...

International Nuclear Information System (INIS)

Purpose: To enable safety reactor shut down upon occurrence of an abnormal excess pressure in a hydraulic control unit. Constitution: The actuation pressure for a pressure switch that generates a scram signal is set lower than the release pressure set to a pressure release valve. Thus, if the pressure of nitrogen gas in a nitrogen container increases such as upon exposure of the hydraulic control unit to a high temperature, the pressure switch is actuated at first to generate the scram signal and a scram valve is opened to supply water at high pressure to control rod drives under the driving force of the nitrogen gas at high pressure to rapidly insert the control element into the reactor and shut down it. If the pressure of the nitrogen gas still increases after the scram, the pressure release valve is opened to release the nitrogen gas at high temperature to the atmosphere. Since the scram is attained before the actuation of the pressure ...

Science.gov (United States)

The GTPases comprise a protein superfamily of highly conserved molecular switches adapted to many diverse functions. These proteins are found in all domains of life and often perform essential roles in fundamental cellular processes. Analysis of data from genome sequencing projects demonstrates that bacteria possess a core of 11 universally conserved GTPases (elongation factor G and Tu, initiation factor 2, LepA, Era, Obg, ThdF/TrmE, Ffh, FtsY, EngA and YchF). Investigations aimed at understanding the function of GTPases indicate that a second conserved feature of these proteins is that they elicit their function through interaction with RNA and/or ribosomes. An emerging concept suggests that the 11 universal GTPases are either necessary for ribosome function or transmitting information from the ribosome to downstream targets for the purpose of generating specific cellular responses. Furthermore, it is suggested that progenitor GTPases were early regulators of RNA ...

Energy Technology Data Exchange (ETDEWEB)

A new approach to dynamic security assessment in electric power systems is proposed. A power system is modeled as a dynamical system with random variable structure. Structural variations are caused by primary and secondary events. Primary events are state-independent disturbances representing line and unit faults and load changes and are modeled by random jump processes. Secondary events that represent forced line and unit outages and load sheddings are modeled through an aggregate representation of the protection system as random processes whose change in time corresponds to the crossing of switching surfaces by the state process. These switching surfaces are defined by the setting of the protective relays. Commensurate with this model a three-state decomposition of the operating conditions into normal, emergency, and partial load operating states is suggested. Transitions between these states are described in terms of set-valued mappings in ...

International Nuclear Information System (INIS)

The DOE is conducting a comprehensive technical analysis of a flexible-fuel transportation system in the United States -- that is, a system that could easily switch between petroleum and another fuel, depending on price and availability. The DOE Alternative Fuels Assessment is aimed directly at questions of energy security and fuel availability, but covers a wide range of issues. This report examines environmental, health, and safety concerns associated with a switch to alternative- and flexible-fuel vehicles. Three potential alternatives to oil-based fuels in the transportation sector are considered: methanol, compressed natural gas (CNG), and electricity. The objective is to describe and discuss qualitatively potential environmental, health, and safety issues that would accompany widespread use of these three fuels. This report presents the results of exhaustive literature reviews; discussions with specialists in the vehicular and ...

International Nuclear Information System (INIS)

One of the most profound features of electricity spot prices are the price spikes. Markov regime-switching (MRS) models seem to be a natural candidate for modeling this spiky behavior. However, in the studies published so far, the goodness-of-fit of the proposed models has not been a major focus. While most of the models were elegant, their fit to empirical data has either been not examined thoroughly or the signs of a bad fit ignored. With this paper we want to fill the gap. We calibrate and test a range of MRS models in an attempt to find parsimonious specifications that not only address the main characteristics of electricity prices but are statistically sound as well. We find that the best structure is that of an independent spike 3-regime model with time-varying transition probabilities, heteroscedastic diffusion-type base regime dynamics and shifted spike regime distributions. Not only does it allow for a seasonal spike intensity throughout the year and ...

International Nuclear Information System (INIS)

This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC ...

Energy Technology Data Exchange (ETDEWEB)

A novel compact CT-guided intensity modulated proton radiotherapy (IMPT) system is described. The system is being designed to deliver fast IMPT so that larger target volumes and motion management can be accomplished. The system will be ideal for large and complex target volumes in young patients. The basis of the design is the dielectric wall accelerator (DWA) system being developed at the Lawrence Livermore National Laboratory (LLNL). The DWA uses fast switched high voltage transmission lines to generate pulsed electric fields on the inside of a high gradient insulating (HGI) acceleration tube. High electric field gradients are achieved by the use of alternating insulators and conductors and short pulse times. The system will produce individual pulses that can be varied in intensity, energy and spot width. The IMPT planning system will optimize delivery characteristics. The system will be capable of being sited in a conventional linac vault and provide intensity ...

International Nuclear Information System (INIS)

Superconducting magnetic and inertial energy pulsed power systems are being developed for future theta-pinch, Tokamak, and laser fusion applications. The short term requirements for these applications are discussed along with present day accomplishments. Areas requiring a research and development effort are examined in detail. Subjects discussed include stresses, energy loss factors, conductor metallurgy, cryogenic requirements, and electrical limitations of superconducting magnetic storage systems; costs, applications, and present technology of homopolar systems; and switching problems associated with both systems.

International Nuclear Information System (INIS)

Many countries are liberalizing their energy markets. Participants in these markets are exposed to market risk due to the characteristics of electricity price dynamics. Electricity prices are known to be mean-reverting very volatile and subject to frequent spikes. Models that describe the dynamics of electricity prices should incorporate these characteristics. In order to capture the price spikes, many researchers have introduced stochastic jump processes, but we argue and show that this specification might lead to potential problems with specifying the true amount of mean-reversion within the process. In this paper, we propose a regime-switching model that models price spikes separated from normal mean-reverting prices.