Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow ...

International Nuclear Information System (INIS)

This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials ...

International Nuclear Information System (INIS)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

British Library Electronic Table of Contents (United Kingdom)

Doped ultrafine silicon dioxide powder with a narrow particle size distribution was obtained by RF discharge-stimulated dichlorosilane (SiH2C) oxidation at a low pressure using isobutylene as the combustion inhibitor and chromium hexacarbonyl (Cr(CO)6) as the dopant. The formation and morphology of the ultrafine particles are governed by the parameters of the RF discharge and by the chemical mechanism of the combustion reaction yielding the aerosol. Submicron-sized filamentous carbon structures can be obtained by isobutylene decomposition under spark discharge conditions in the presence of a molybdenum metal catalyst.

Energy Technology Data Exchange (ETDEWEB)

A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening process than pure ...

Energy Technology Data Exchange (ETDEWEB)

We have measured some of the optical characteristics of a novel energy conversion medium, over a range of compositions in the system Yb[sub 2]O[sub 3][minus]Al[sub 2]O[sub 3], which we have fabricated by a proprietary process. These specimens have good resistance to thermal shock, are durable, and are mechanically and chemically stable. The integrated emission of light generated by these unoptimized specimens when heated with a propane-air flame and detected with a silicon photodetector ranged up to 1.88 watts/cm[sup 2]. The emission spectrum from these specimens when heated with a propane-air flame and detected with a germanium photodetector shows a narrow band in the vicinity of 1 micron.

Energy Technology Data Exchange (ETDEWEB)

We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low energy (ULE) B implanted Si during annealing. Defect dissolution occurs earlier and at ...

Energy Technology Data Exchange (ETDEWEB)

We used light confinement in optical microcavities to achieve a strong enhancement and a precise wavelength tunability of the electrical photoconductance of nanostructured porous silicon (PS). The devices consist of a periodic array of alternating PS layers, electrochemically etched to have high and low porosities - and therefore distinct dielectric functions. A central layer having a doubled thickness breaks up the symmetry of the one-dimensional photonic structure, producing a resonance in the photonic band gap that is clearly observed in the reflectance spectrum. The devices were transferred to a glass coated with a transparent SnO{sub 2} electrode, while an Al contact was evaporated on its back side. The electrical conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

International Nuclear Information System (INIS)

The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ ...

Energy Technology Data Exchange (ETDEWEB)

A-15 compounds are extremely brittle and difficult to process for practical applications. A novel processing technique was developed to greatly improve the mechanical and superconducting properties of A-15 alloys. The new processing technique can be described as follows: (1) to select compounds that can form the A-15 phase (the selected A-15 compounds in this research were Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys); (2) to rapidly solidify them into the amorphous state; (3) to anneal the quenched amorphous products into ultra fine-grained single A-15 phase. The extreme grain refinement greatly improved the flexibility and the critical current density of the alloys. The melt spinning technique was used to rapidly solidify Ti3Nb6Mo3Si4 and Nb99.5-(x + y)AlxSiyB0.5 alloys. Ti3Nb6Mo3Si4 alloys were relatively easily formed into the amorphous state. Nb3Al alloys required the addition of glass forming elements Si and B. It was found that, without boron, the ...

KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

This document presents the activity of KiloFarad International (KFI), a trade association for the promotion of the interests of the international ultra-capacitor industry through education and representation. KFI provides a forum for the ultra-capacitor industry to work on non-competitive activities (standards, working groups, test procedures etc..). The rest of the document presents some informations about ultra-capacitors technology and some advanced applications in the automotive and telecommunication industries. (J.S.)

Science.gov (United States)

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Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

KoreaScience (Korea)

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Science.gov (United States)

PMID:534760

Energy Technology Data Exchange (ETDEWEB)

We have used polished stainless steel as a mirror substrate to provide focusing of soft x-rays in grazing incidence reflection. The substrate is bent to an elliptical shape with large curvature and high stresses in the substrate require a strong elastic material. Conventional material choices of silicon or of glass will not withstand the stress required. The use of steel allows the substrates to be polished and installed flat, using screws in tapped holes. The ultra-high-vacuum bender mechanism is motorized and computer controlled. These mirrors are used to deliver focused beams of soft x-rays onto the surface of a sample for experiments at the Advanced Light Source (ALS). They provide an illumination field that can be as small as the mirror demagnification allows, for localized study, and can be enlarged, under computer control,for survey measurements over areas of the surface up to several millimeters. The critical issue of the quality of the ...

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques for producing high-quality solar cell metallization patterns have been investigated, developed, and characterized. During the early stages, preliminary investigations were carried out on a variety of promising laser-assisted metallization schemes, and the best of these was selected for further development. A comprehensive literature search initially yielded information on state-of-the-art laser-assisted techniques for metal deposition such as laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. Initial experiments on laser-enhanced electroplating yielded very promising results with linewidths as narrow as 25 ..mu..m and local plating speeds as high as 12 ..mu..m/s being achieved. Metal deposition experiments were carried out utilizing laser-assisted pyrolysis of a variety of metal-bearing polymer films and metallo-organic inks spun onto silicon ...

International Nuclear Information System (INIS)

Reducing count losses and pile-up pulse effects in quantitative and qualitative analysis is necessary for accuracy of analysis. Therefore, the optimum peaking time for particular detector systems is important. For this purpose, pure Se and Zn elements were excited by 59.5 keV ?-rays from a 50 mCi 241Am annular radioactive source in this study. The characteristic x-rays emitted from pure Se and Zn elements were detected by using an ultra low energy Ge (Ultra-LEGe) detector connecting Tennelec TC 244 spectroscopy amplifier at different peaking time modes. Overall pulse widths were determined by HM 203-7 oscilloscope connecting amplifier. The proper peaking time for ultra low energy germanium detector (Ultra-LEGe) is determined about 4 ?s.

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Science.gov (United States)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

Science.gov (United States)

indications of the formation of palladium silicides. 2, 4. It has been reported .... At room temperature, palladium silicides formed in a relatively narrow interface ...

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

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International Nuclear Information System (INIS)

... defects doped materials germanium infrared radiation monocrystals neutron

Energy Technology Data Exchange (ETDEWEB)

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

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Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The NREL Sensitized Solar Cell (SSC) Core Program supports the Solar America Initiative by: (1) targeting new devices and processes for commercialization by 2015 that are less expensive, more efficient, highly reliable, and environmentally benign; (2) collaborating with DOE OS/BES to conduct basic research targeting breakthroughs in key areas, such as ultra-high efficiency and/or ultra-low cost materials and devices.

International Nuclear Information System (INIS)

The existence of a narrow peak of electron state density in A-15 is explained by a strong electron-phonon interaction that brings about the polaron narrowing of zone. In the supposition of weak and intermediate bond, the analytical expression for the critical transition temperature is found that corre lates Tsub(c) with phonon spectrum. The model permits to explain Tsub(c) correlation with the number of electrons per atom, temperature direction of resistance, value and temperature dependence of magnetic susceptibility and electron tehrmal capacity.

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

Energy Technology Data Exchange (ETDEWEB)

Full text of publication follows: The heat transfer and flow in narrow channels has lots of advantages such as compact structure, high efficiency, design flexibility and so on. So it is widely used in the fields such as the new reactor core plate elements, the once-through stream generator, compact heat exchangers as well as electronic components. In recent years, more strong attentions have been attracted to the thermal-hydraulic characteristics and mechanism of the two-phase flow in narrow channels. As the flow regime characteristics of two-phase flow is fundamental one of them, the research on the two-phase flow regimes and the regime transitions in horizontal rectangular narrow heated channels can provide theoretical foundation and engineering directions to the whole research on the thermal-hydraulic characteristics and mechanism of the two-phase flow in narrow channels. The characteristics of ...

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

British Library Electronic Table of Contents (United Kingdom)

A wet air oxidation (WAO) process was applied to four selected pharmaceuticals (metoprolol, naproxen, amoxicillin, and phenacetin) individually dissolved in ultra-pure water, varying the temperature and oxygen pressure. Due to the moderate (amoxicillin) or low (metoprolol, naproxen, and phenacetin) efficiency found in the oxidation of these pollutants, a catalytic wet air oxidation (CWAO) process was then tested using a platinum catalyst supported on multi-walled carbon nanotubes (CNT). In this CWAO process, the pharmaceuticals were dissolved together in ultra-pure water and in four natural water matrices-a reservoir water, a groundwater, and two waters from different municipal wastewater treatment plants. On the basis of the measurements of their removals, a discussion is given of the inf...

International Nuclear Information System (INIS)

The determination of the oxidation state of ultra-trace elements in the environment, especially in the case of actinides, is of importance in many ways. Speciation techniques using radiation may comprise methods based on the detection of the nuclear and atomic radiations emitted in radioactive decay or methods using external sources of excitation. In the former instance, information can be obtained from the energy and intensity of radiation, but at present the partition method is still the most commonly used, although its reliability is questionable. Excitation with intense laser beams, as is currently being used for trace element analysis in photoacoustic and thermal lensing spectroscopic techniques, could conceivably be applied under suitable conditions to ultra-trace elements with a sensitivity approaching that of the radiochemical methods.

International Nuclear Information System (INIS)

An Ultra-Low-Carbon 19% Cr-11% Ni Stainless Steels used in nuclear fuel reprocessing plants where highly corrosion resistance in nitric acid is required has been developed. This steel has optimized the chemistry composition to decrease inclusions and deformation-induced martensitic transformation. The formation of deformation-induced martensite has the potential danger of accelerating corrosion in nitric acid. In this paper, effects of cold reduction and martensitic transformation on corrosion resistance of Ultra-Low-Carbon Stainless Steels in nitric acid are discussed. The developed steel showed excellent corrosion resistance during long-term exposure to nitric acid. (author).

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

Science.gov (United States)

The advanced technologies of Ka-Band systems such as high gain spot .... sometimes used based on link requirements for a specific application. .... received at NASA LeRC from a Ku-band satellite and retransmitted to the USAT at Ka-Band. .... and to the Office of Management and Budget, Paperwork Reduction Project ...

Science.gov (United States)

In order to understand how matter 15 billion years ago in the form of quarks, gluons and leptons at a temperature of 2 (times) 10(sup 12) (degrees)K evolved to become today's Universe, the goal of relativistic and ultra-relativistic heavy ion physics is t...

CERN Document Server

We present our discovery of a narrow-line Baldwin effect, an anti-correlation between the equivalent width (EW) of a line and the flux of the associated continuum, in 5-20$\\mu$m mid-infared lines from a sample of 68 Active Galactic Nuclei (AGN), located at z$<$0.5, observed with the Infrared Spectrograph on the {\\it Spitzer Space Telescope}. Our analysis reveals a clear anti-correlation between the EW of the [SIV] 10.51$\\mu$m, [NeII] 12.81$\\mu$m, and [NeIII] 15.56$\\mu$m lines and their mid-IR continuum luminosities, while the Baldwin effect for [NeV] 14.32$\\mu$m is not as obvious. We suggest that this anti-correlation is driven by the central AGN and not circumnuclear star formation in the host galaxy. We also find that the slope of the narrow-line Baldwin effect in the mid-infrared does not appear to steepen with increasing ionization potential. Examining the dependence of the EW to the Eddington Ratio ($L/L_{Edd}$) we find no strong ...

UK PubMed Central (United Kingdom)

The brain’s ability to bind incoming auditory and visual stimuli depends critically on the temporal structure of this information. Specifically, there exists a temporal window of audiovisual...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A comparitive analysis is made of the principal characteristics of narrow-band and conventional semiconductor light amplifiers. It is shown that quasi-distributed filtering of the spontaneous radiation ensures a high gain and a low level of the spontaneous noise at the amplifier output.

UK PubMed Central (United Kingdom)

BackgroundVascular stents are small tubular scaffolds used in the treatment of arterial stenosis (narrowing of the vessel). Most vascular stents are metallic and are deployed either...Full Text Available

UK PubMed Central (United Kingdom)

Previous work has implicated prefrontal cortices in selecting among and retrieving conceptual information stored elsewhere. However, recent neurophysiological work in monkeys suggests that prefrontal...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundMany commercial banana varieties lack sources of resistance to pests and diseases, as a consequence of sterility and narrow genetic background. Fertile wild relatives,...Full Text Available

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

International Nuclear Information System (INIS)

Heat transfer and flow characteristics of water boiling flow were experimentally investigated in narrow horizontal rectangular channels with the gaps of 0.6mm-2.03mm. The heat transfer of two-phase boiling flow was weakend in smaller gap. The two-phase friction pressure drop decreased with the gap size and the two-phase friction multipliers were smaller compared with those in normal channels. Correlations to predict te boiling heat transfer coefficients were obtained. (author)

Energy Technology Data Exchange (ETDEWEB)

The existence of a narrow peak in the electronic density of states in A-15 compounds is explained by a strong electron--phonon interaction that leads to the polaron narrowing of the band. An analytic expression relating the transition temperature T/sub c/ to the phonon spectrum is derived under the assumption of a weak and an intermediate-strength coupling. The model allows the explanation of the correlation of T/sub c/ with the number of electrons per atom, the temperature dependence of the resistance, the magnitude and temperature dependence of the magnetic susceptibility, and the electronic specific heat.

Energy Technology Data Exchange (ETDEWEB)

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

International Nuclear Information System (INIS)

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

Energy Technology Data Exchange (ETDEWEB)

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

International Nuclear Information System (INIS)

The ultra-high pressure waterjet technology was being evaluated at Florida International University (FIU) as a baseline technology. In conjunction with FIU's evaluation of efficiency and cost, this report covers the evaluation conducted for safety and health issues. It is a commercially available technology and has been used for various projects at locations throughout the country. The ultra-high pressure waterjet technology acts as a cutting tool for the removal of surface substrates. The Husky trademark pump feeds water to a lance that directs the high pressure water at the surface to be removed. The safety and health evaluation during the testing demonstration focused on two main areas of exposure. These were dust and noise. The dust exposure was found to be minimal, which would be expected due to the wet environment inherent in the technology, but noise exposure was at a significant level. Further testing for noise is recommended because of ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit ...

CERN Document Server

Ultra-luminous infrared galaxies are among the most luminous objects in the local universe and are thought to be powered by intense star formation. It has been shown that in these objects the rotational spectral lines of molecular hydrogen observed at mid-infrared wavelengths are not affected by dust obscuration, leaving unresolved the source of excitation of this emission. Here I report an analysis of archival Spitzer Space Telescope data on ultra-luminous infrared galaxies and demonstrate that star formation regions are buried inside optically thick clouds of gas and dust, so that dust obscuration affects star-formation indicators but not molecular hydrogen. I thereby establish that the emission of H_2 is not co-spatial with the buried starburst activity and originates outside the obscured regions. This is rather surprising in light of the standard view that H_2 emission is directly associated with star-formation activity. Instead, I propose ...

International Nuclear Information System (INIS)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted in ...

International Nuclear Information System (INIS)

Alcaptonuria is a rare autosomal recessive metabolic disease, due to the lack of homogentisic acid oxidase. The following accumulation of homogentisic acid brings about a black discoloration of both the urine alcaptonuria) and connective tissue (ochronosis). The ochronotic alterations into joint cartilages cause degenerative arthropathy and osteopenia. The radiological features of three unrelated cases of alcaptonuria are reported. Radiographic abnormalities of ochconotic arthropathy are found in both the spine and the extraspinal joints. In the spine, the progressive calcification and ''vacuum'' phenomenon of disc spaces are the most characteristic findings. Disc space narrowing is associated with calcification and marginal sclerosis of vertebral bodies and is accentuated by osteopenia. Osteophytes are usually absent or of small size; neverthless progressive formation of marginal intervertebral bridges and obliteration of disc spaces at multiple levels ...

CERN Document Server

We report the results of mapping observations of the bipolar nebula with SiO maser emission, IRAS 19312+1950, in the CO (J=1-0 and J=2-1), 13CO (J=1-0 and J=2-1), C18O (J=1-0), CS (J=2-1), SO (J_K=3_2-2_1) and HCO+ (J=3-2) lines with the Berkeley-Illinois-Maryland Association array. Evolutional status of this source has been evoking a controversy since its discovery, though SiO maser sources are usually identified as late-type stars with active mass loss. In line profiles, two kinematical components are found as reported in previous single-dish observations: a broad pedestal component and a narrow component. Spatio-kinetic properties of a broad component region traced by 12CO lines are roughly explained by a simple spherical outflow model with a typical expanding velocity of an AGB star, though some properties of the broad component region still conflict with properties of a typical AGB spherical outflow. A narrow component region apparently ...

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

Energy Technology Data Exchange (ETDEWEB)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for ...

Energy Technology Data Exchange (ETDEWEB)

Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

British Library Electronic Table of Contents (United Kingdom)

A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...

Energy Technology Data Exchange (ETDEWEB)

This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)

International Nuclear Information System (INIS)

English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,

Science.gov (United States)

Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

Energy Technology Data Exchange (ETDEWEB)

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

Energy Technology Data Exchange (ETDEWEB)

Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

British Library Electronic Table of Contents (United Kingdom)

Tailor die quenching in the hot stamping of quenchable steel sheets was developed to produce ultra-high strength steel formed parts having strength distribution. Local portions of the heated sheet were quenched by holding grooved tools at the bottom dead centre during the stamping. Non-contact portions were generated in the sheet by grooving the tools, and thus the strength in the contact portions is high owing to the quenching and that in the non-contact portions is low owing to the lack of the quenching. Hat-shaped products having a tensile strength of approximately 1.5GPa only at four corners were formed.

International Nuclear Information System (INIS)

A procedure was developed for separating rubidium from irradiated aluminum encapsulated uranium. The separations procedure produces a final ultra-high purity RbCl product for subsequent high performance mass spectrometric analysis. The procedure involves first removing most of the macro-components and fission products by strong base anion exchange using, first, concentrated HCl, then oxalic acid media and second, selectively separating rubidium from alkaline-earth ions and other alkali-metal ions, including cesium, using Bio-Rex-40 cation-exchange resin. The resultant RbCl is then put through a final vacuum sublimation step. Ultra-pure reagents and specially clean glassware are used throughout the procedure to minimize contamination by naturally-occurring rubidium.

International Nuclear Information System (INIS)

The conventional Calzination-Reduction-Carburization (CRC) process offers the potential to manufacture commercial WC powders with median SEM grain sizes below 0.5 pm (ultra fine grades). Strict process control and a high degree of automation have led to increased powder uniformity and high lot-to-lot reliability. The high potential and flexibility of the CRC process is shown by the development of tailor made WC powders with regard to subsequent alloy manufacturing. R and D powders have successfully been processed in full-scale units exhibiting SEM grain sizes of 0.15 - 0.20 pm. This paper discusses the powder characteristics of various ultra fine WC powder grades, stemming from the conventional CRC process. Analytical characterization include also field-emission SEM, bright field TEM, EDX analysis and XRD-line broadening. (author)

Energy Technology Data Exchange (ETDEWEB)

This paper describes how hydrogen transport affects the severity of hydrogen embrittlement in 300 M and AerMet100 ultra high strength steels. Slow strain rate tests were carried out on specimens coated with electrodeposited cadmium and aluminium-based SermeTel 1140/962. Hydrogen diffusivities were measured using two-cell permeation and galvanostatic charging methods and values of 8.0 x 10{sup -8} and 1.0 x 10{sup -9} cm{sup 2} s{sup -1} were obtained for 300 M and AerMet100, respectively. A two-dimensional diffusion model was used to predict the hydrogen distributions in the SSR specimens at the time of failure. The superior embrittlement resistance of AerMet100 was attributed to reverted austenite forming around martensite laths during tempering.

Energy Technology Data Exchange (ETDEWEB)

Chest computed tomography (CT) was valuable in detecting extrinsic tracheal compression by mediastinal masses in two pediatric patients. This prompted an independent evaluation by CT of 14 children with masses involving the middle mediastinum and possible intrathoracic tracheal narrowing. Computer programs permit precise calculation of tracheal cross-sectional areas. Any apparent decrease in tracheal area may be compared with CT-derived data in normal children. Chest CT not only demonstrates the presence of extrinsic airway compression in pediatric patients with mediastinal masses, but also is capable of precisely measuring the extent of this narrowing. This method identifies children at potential risk for respiratory compromise and may aid in subsequent therapy.

International Nuclear Information System (INIS)

Staircase current-voltage (I-V) characteristics, observed at 77 K in narrow 2DEG channels irradiated by a single line scan of a focused ion beam (FIB), is reported in detail. These staircases are interpreted as evidence of single electron tunneling through a naturally occurring specific Coulomb island in the random potential fluctuations created by FIB damage. Clear comparison is made between the I-V's taken from wide channels and those from narrow channels. Based on orthodox calculations of the I-V characteristics, it is shown that highly asymmetric tunnel junctions are needed to explain our data. This is consistent with the random nature of the potential landscape in the FIB damaged region. (author).

Energy Technology Data Exchange (ETDEWEB)

Evidence is reported for a narrow structure near the J/{psi}{phi} threshold in exclusive B{sup +} {yields} J/{psi}{phi}K{sup +} decays produced in {bar p}p collisions at {radical}s = 1.96 TeV. A signal of 14 {+-} 5 events, with statistical significance in excess of 3.8 standard deviations, is observed in a data sample corresponding to an integrated luminosity of 2.7 fb{sup -1}, collected by the CDF II detector. The mass and natural width of the structure are measured to be 4143.0 {+-} 2.9(stat) {+-} 1.2(syst) MeV/c{sup 2} and 11.7{sub -5.0}{sup +8.3}(stat) {+-} 3.7(syst) MeV/c{sup 2}.

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Energy Technology Data Exchange (ETDEWEB)

High and ultra-high strength steels for pipelines are produced by properly handling the steel microstructure. The metallurgical principles involved in the microstructure control are presented, with emphasis on TMCP processing, that comprises conventional controlled rolling followed by accelerated cooling. (author)

Energy Technology Data Exchange (ETDEWEB)

Conference abstract book contains seven sections: Plenary-4 abstracts; Chemical-9 abstracts; Radiation-7 abstracts; Ultra Low Doses and Medicine-6 abstracts; Biomedical-11 abstracts; Risk Assessment-5 abstracts and Poster Sessions-25 abstracts. Each abstract was provided by the author/presenter participating in the conference.

Science.gov (United States)

Channel plasmon polaritons (CPPs) propagating along the bottom of subwavelength grooves cut into a metal surface were recently shown to exhibit strong confinement combined with low propagation loss, a feature that makes this guiding configuration very promising for the realisation of ultra-compact photonic components. Here, the results of our investigations of CPP guiding by V-grooves cut into gold are presented, demonstrating efficient large-angle bending and splitting of radiation as well as waveguide-ring resonators and Bragg grating filters.

International Nuclear Information System (INIS)

By means of an audio frequency plasma polymerisation ultra-thin gradient plasma polymer layers were deposited on zinc and zinc-coated iron. The aim was to generate an interfacial polymeric layer which bonds to an oxidised metal as well as to a subsequently applied organic coating and acts as an interfacial barrier layer for ions and water. Surface modifications were done in an in situ plasma cell with infrared reflection absorption spectroscopy (IRRAS). The zinc surface was first activated by an oxygen plasma to provide a freshly oxidised and contamination free oxide surface. The intermediate stages of the surface reactions could be revealed. Carbon dioxide molecules as oxidation products adsorbed on the growing zinc oxide and were desorbed at a later stage. An organosilicon plasma polymer was deposited directly on top of the oxide layer from a hexamethyldisilane (HMDS) plasma. Afterwards a cyclohexene (CHEX)/hexamethyldisilane co-plasma polymer was deposited. The ...

Energy Technology Data Exchange (ETDEWEB)

Technological processes of welding are significant sources of pollution in the working area. Evaluation of chemical quality of working area was made by means of radionuclide x-ray fluorescence analysis and activation analysis with fast neutrons. Welding aerosols were sampled by filtration method on Synpor 4 membrane ultra-filters. For selected types of welding filter metals, determination of heavy metals in aerosols was performed.

International Nuclear Information System (INIS)

An 'electron-bridge' mechanism of nuclear reaction in an atom or ion by ultra-intense laser fields is presented. A preliminary estimate of the intensity dependence of the rate of disintegration reaction of deuteron nucleus in deuterium atom is made for 800 nm laser fields. For intensities below 5x1021 W/cm2, the rate of disintegration by the 'electron-bridge' mechanism is found to be small, but it rises sharply and becomes large already for ?1022 W/cm2.

International Nuclear Information System (INIS)

An operating cycle of a serial multivibrator carried out on the base of field-effect transistors has been analyzed. Calculation relations for the main multivibrator parameters have been obtained, and conditions of self-excitation has been determined. Experimental data for determination of the self-oscillation excitation region have been presented. These results are in a good agreement with the experiment. The analysis of the data obtained has shown that the serial multivibrator on field-effect transistors has comparatively narrow excitation region and requires an accurate turning.

International Nuclear Information System (INIS)

Molar extinction coefficients for the solid solutes in aqueous solutions of some alkaline earth chlorides such as MgCl_2.6H_2O, CaCl_2, SrCl_2.6H_2O and BaCl_2.2H_2O have been determined at 81, 356, 511, 662, 1173 and 1332 keV energies in different concentration using the narrow beam transmission methods. (author)

International Nuclear Information System (INIS)

Heat transfer augmentation in narrow rectangular channels in a target system is a very important method to remove high heat flux up to 12 MW/m"2 generated at target plates of a high-intensity proton accelerator of 1.5 GeV and 1 mA with a proton beam power of 1.5 MW. In this report, heat transfer coefficients and friction factors in narrow rectangular channels with one-sided rib-roughened surface were evaluated for fully developed flows in the range of the Reynolds number from 6,000 to 1,00,000; the rib pitch-to-height ratios (p/k) were 10,20 and 30; the rib height-to-equivalent diameter ratios (k/De) were 0.025, 0.03 and 0.1 by means of previous existing experimental correlations. The rib-roughened surface augmented heat transfer coefficients approximately 4 times higher than the smooth surface at Re=10,000, p/k=10 and k/De=0.1; friction factors increase around 22 times higher. In this case, higher heat flux up to 12 MW/m"2 could be removed ...

CERN Document Server

Two-dimensional generalization of the original peak finding algorithm suggested earlier is given. The ideology of the algorithm emerged from the well known quantum mechanical tunneling property which enables small bodies to penetrate through narrow potential barriers. We further merge this ``quantum'' ideology with the philosophy of Particle Swarm Optimization to get the global optimization algorithm which can be called Quantum Swarm Optimization. The functionality of the newborn algorithm is tested on some benchmark optimization problems.

Energy Technology Data Exchange (ETDEWEB)

In the paper is studied the physics of a free electron laser (FEL) based on a two-frequency undulator (TFU) which induces large non linear effects, especially on the spectral dynamics. These effects are analyzed in an extended formalism where the spontaneous emission, the low-gain regime and the strong-field saturation regime are studied. Numerical simulations show that the optimized TFU generates a laser field having both a large extraction efficiency and a narrow spectrum.

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

Energy Technology Data Exchange (ETDEWEB)

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

Energy Technology Data Exchange (ETDEWEB)

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

International Nuclear Information System (INIS)

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

Energy Technology Data Exchange (ETDEWEB)

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

Energy Technology Data Exchange (ETDEWEB)

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

International Nuclear Information System (INIS)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

International Nuclear Information System (INIS)

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

Energy Technology Data Exchange (ETDEWEB)

An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

UK PubMed Central (United Kingdom)

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

Science.gov (United States)

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

Energy Technology Data Exchange (ETDEWEB)

This paper describes high speed rolling and gauge control in cold tandem mill for ultra-thin gauge strip at the Chiba Works of Kawasaki Steel Corporation. To improve the plate-out property of rolling oil, cationic polymeric coagulant was prepared. Rolling oil with cohesion independent of inorganic inclusions or phosphatide was developed, to improve the lubrication for cold rolling, remarkably. In addition, a low-cost Ti-enhanced work roll having high wear resistance and excellent grindability was developed. Rolling can be conducted at the optimal rolling roughness and operation can be performed at the highest rolling speed independent of the rolling treatment amount. Rolling speed at 2800 m/min was confirmed by developing the rolling oil with excellent lubrication and the work roll having high wear resistance. For the improvement of strip thickness accuracy at the steady state rolling, use of the backup roll as roller bearing was more effective rather than the ...

International Nuclear Information System (INIS)

In an attempt to enhance the electrical and mechanical properties of the high temperature superconducting oxides, high T(sub c) composites were prepared composed of the 123 compounds and AgO. The presence of extra oxygen due to the decomposition of AgO at high temperature is found to stabilize the superconducting 123 phase. Ag is found to serve as clean flux for grain growth and precipitates as pinning center. Consequently, almost two orders of magnitude enhancement in critical current densities were also observed in these composites. In addition, these composites also show much improvement in workability and shape formation. On the other hand, proper oxygen treatment of Y5Ba6Cu11Oy was found to possibly stabilize superconducting phase with T(sub c) near 250 K. I-V, ac susceptibility, and electrical resistivity measurements indicate the existence of this ultra high T(sub c) phase in this compound. Detailed structure, microstructure, electrical, magnetic and thermal ...

CERN Document Server

Gamma-ray burst (GRB) is one of the candidates of high-energy cosmic-ray acceleration sites. They may be also ultra-high-energy (above 3 EeV) cosmic-ray (UHECR) sources. In this paper, we discuss possibilities and implications of high-energy cosmic-ray acceleration in GRBs. (1) First, we show that not only protons but also heavier nuclei can be accelerated up to ultra-high energies in both usual high-luminosity (HL) and low-luminosity (LL) GRBs by using the Geant4. LL GRBs may also make a significant contribution to the observed UHECR flux if they form a distinct population, and we investigate cosmic-ray acceleration in LL GRBs in detail. (2) Second, we discuss implications of the GRB-UHECR hypothesis (and Hypernova-UHECR hypothesis) to cosmic-ray astronomy. HL GRBs and LL GRBs will lead to different source number densities as UHECR sources, so that the determination of the number density of UHECR sources and strength of the mean extragalactic ...

Energy Technology Data Exchange (ETDEWEB)

A 19.1 metre wind turbine blade was subjected to static tests. The purpose of the test series was to verify the abilities of different types of sensors to detect damage in wind turbine blades. Prior to each of the static test-series an artificial damage was made on the blade. The damage made for each test-series was surveyed during each series by acoustic emission, fiber optic micro bend displacement transducers and strain gauges. The propagation of the damage was determined by use of ultra sonic and X-ray surveillance during stops in the test series. By use of acoustic emission it was possible to measure damage propagation before the propagation was of visible size. By use of fiber optic micro bend displacement transducers and strain gauges it was possible to measure minor damage propagation. By use of both ultra sonic, and X-ray NDT-equipment it were possible to determine the size of propagated damage. (au)

Energy Technology Data Exchange (ETDEWEB)

In the development of the specific mathematical modeling for heavy and ultra heavy petroleum fractions in a molecular distiller is very important the definition of physical and chemical parameters as density and specific heat of the mixture, the enthalpy of vaporization, among others, since they are used in the energy balance. Information on these properties and their variation with temperature are found in the open literature for mixture with few components (simple mixtures). However, for multicomponent solutions consisting of complex mixtures such as oil and its heavy and ultraheavy fractions, available data are few, or are limited to low temperatures. The specific heat is an important property in the energy balance. This property can be measured by Differential Scanning Calorimetry (DSC), which gives results with great sensitivity and accuracy. This paper presents the variation of specific heat with the temperature of ultra-heavy oil ...

British Library Electronic Table of Contents (United Kingdom)

An extremely sensitive stripping voltammetric procedure for ultra-trace determination of iridium(III) is reported. The method is based on the interfacial accumulation of the iridium(III)-CTAB complex onto the glassy carbon electrode, followed by the catalytic reduction of the adsorbed complex in the presence of bromate. 0.3molL^-^1 acetate buffer pH 4.7+6.9x10^-^2molL^-^1 NaBrO3+2.7x10^-^5molL^-^1 cetyltrimethylammonium bromide (CTAB)+0.2molL^-^1 KCl was employed as the supporting electrolyte. The analytical procedure was verified by the analysis of the standard reference materials: Sea Water BCR-CRM 403 and Fresh Water NIST-SRM 1643d. The accuracy, expressed as relative error e%, was satisfactory, being lower than 6%, while precision as repeatability, expressed as relative standard deviat...

International Nuclear Information System (INIS)

T_2 weighted ultra-short turbo spin echo sequences were used in five individuals with variations in echo times, delayed triggering and echo intervals. To reduce movement artifacts all examinations were carried out with ECG and respiratory triggering. The sequences giving optimal image quality were then employed in 19 patients having various pulmonary abnormalities. Image resolutions, artifacts, image contrasts and diagnostic value were then judged by two observers and compared with CT. In the first study, a diastole-triggered UTSE sequence with the shortest echo proved optimal (T_E=90 ms, T_R=2-4 s, echo=9 ms, turbo factor=19). In the patient series studied, MRT was inferior to CT with regard to resolution and number of artifacts, but better in respect of contrast and diagnostic value. Using UTSE of the lung, MRT can produce images of good quality. Compared with CT, contrast is better with MRT, offering diagnostic advantages for MRT. (orig./MG).

International Nuclear Information System (INIS)

Velocity field behind a flat plate, placed near the wall in a narrow channel as a simulant of a BWR fuel spacer, was measured by using a hot wire anemometer. It was found that not only the positions where the dead water region behind flat plate disappeared but also the locations where the velocity relaxation completed were almost independent of the width of the clearance, although the local average velocity and velocity fluctuation immediately downstream the flat plate were affected by the difference in the clearance. The transverse flow diversions in the channel cross section were evaluated from the shape of the average velocity profile. The decrease of local flow rate near the channel wall, which may causes the drift flow behind a flat plate, was encouraged as the drag of clearance increased. Attempts have been made to measure spanwise velocity in the narrow channel. A spanwise velocity that occurred due to flow diversion was observed and its ...

International Nuclear Information System (INIS)

Objective: To investigate the value of MRI in the diagnosis of hepatic hilar cholangiocarcinoma. Methods: Sixty-four patients with hepatic hilar cholangiocarcinomas confirmed by surgery or pathology underwent MRI using a 1.5-T superconductive MR system including conventional unenhanced MRI, MRCP and dynamic contrast-enhanced MRI with Gd-DTPA. Results: Dilatation of the intrahepatic biliary tree with narrowing, occlusion or filling defects in the hepatic hilar bile ducts was noted in all 64 cases. Unenhanced MR[ showed T_1- and T_2-hyperintense hilar masses in 42 patients and was normal in the remaining 22 patients. The hilar masses demonstrated slow, progressive and delayed enhancement patterns. There was enhancement of the thickened bile duct wall with luminal narrowing in the 22 patients without hilar masses. Conclusion: The characteristic MRI findings of enhancing hepatic hilar mass and bile duct wall thickening together with MRCP are ...

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Energy Technology Data Exchange (ETDEWEB)

A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

British Library Electronic Table of Contents (United Kingdom)

Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

Energy Technology Data Exchange (ETDEWEB)

There is growing interest in using {sup 242m}Am as a nuclear fuel for space reactors and nuclear batteries. In this paper, we discuss different {sup 242m}Am enrichments, as well as fuel weight requirements, to produce a critical reactor. It was found that relatively low enrichments of {sup 242m}Am, about 10 w/o, are enough to guarantee criticality. Such low enrichments might eliminate the need for a {sup 242m}Am enrichment process. It was also found that the best results for low {sup 242m}Am requirements are obtained with a moderator to fuel volume ratio of 10,000.

International Nuclear Information System (INIS)

Energy deposition process by relativistic fast electrons produced by ultra-intense laser pulses is discussed. The process is calculated with a two dimensional Fokker-Planck simulation code including binary and collective collisions coupled with electromagnetic field. We focused on Velocity Distribution Function (VDF) dependence in the simulation. The results show that the spread angle of the fast electrons distribution affects energy deposition area and deposited energy is concentrated in the vicinity of the propagation axis of the fast electrons. It may be also suggested that self-pinch effect of a fast electron beam causes large deposition energy. (author)

Energy Technology Data Exchange (ETDEWEB)

Zeolite Y is the active component of most commercial cracking catalysts. Interaction of H[sub 3]PO[sub 4] with extraframework aluminum of ultra-stable zeolite (USY) leads to the formation of different types of aluminum phosphates, while there is no indication of the formation of SAPO zeotype structures. The total acidity of USY slightly decreases upon the H[sub 3]PO[sub 4] treatment, while the maximum in the distribution of acid strength is shifted to milder acidities. Dealumination of the zeolite and creation of POH sites associated with AIPO[sub 4] are responsible for the modifications observed. 37 refs., 8 figs., 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

In this paper it is described how a martensitic steel sheet with tensile strength of 1400 MPa is heat treated locally. The sheet is then formed in the heat treated regions in a way that would be impossible with the untreated material. Mechanical properties and forming limit diagrams of the heat treated material are determined and the forming operations are simulated, which shows that the method can be used by designers. Although the method has been known for decades, it remains to be industrialised and the work presented here is to be seen as a contribution to this development. (orig.)

CERN Document Server

In the quest to understand the ultimate nature of WIMPs, we propose the use of a hybrid detection technique: cylinders filled with liquefied noble gasses, acting as targets, are immersed inside a tank of Gd-doped ultra-pure water that provides an active and efficient veto against neutrons. The evaluation of the background rejection capabilities and physics potential of this instrument have been carried out through a full GEANT4 simulation, assuming the detector will be located at the Canfranc underground laboratory (in the Spanish Pyrenees). Our results compare very favourably with existing or planned experiments in the field. This technique is scalable and will allow to reach target masses of few tonnes in the next future.

Energy Technology Data Exchange (ETDEWEB)

It is shown that all contracting, spatially homogeneous, orthogonal Bianchi cosmologies that are sourced by an ultra-stiff fluid with an arbitrary and, in general, varying equation of state asymptote to the spatially flat and isotropic universe in the neighbourhood of the big crunch singularity. This result is employed to investigate the asymptotic dynamics of a collapsing Bianchi type IX universe sourced by a scalar field rolling down a steep, negative exponential potential. A toroidally compactified version of M*-theory that leads to such a potential is discussed and it is shown that the isotropic attractor solution for a collapsing Bianchi type IX universe is supersymmetric when interpreted in an 11-dimensional context.

International Nuclear Information System (INIS)

The principle is described of X-ray fluorescence analysis and the manner of detecting the emitted characteristic radiation. The advantages are presented of radionuclide X-ray fluorescence analysis which consist primarily in the possibility of conducting a totally non-destructive analysis, and of accurate and relatively narrow localization of the analyzed area, the simultaneous qualitative and quantitative determinations of a large number of elements in the order of concentrations 10"1 to 10"-"4%, stability of excitation radiation flux, simple design and relatively low capital costs. The so-called matrix effect is pointed to. A number of examples is given of the use of the cited method, including its use in the analysis of art objects. (J.B.).

Energy Technology Data Exchange (ETDEWEB)

Vibrational dephasing in condensed phases is studied from both a theoretical and experimental standpoint. A theory is presented which describes the dynamics of motional or exchange processes in weakly perturbed systems. This general formalism, which has been previously used to describe motional narrowing in magnetic resonance, is applied to vibrational spectroscopy. The model treats the case of a high frequency vibration anharmonically coupled to a low-frequency vibration. Intermolecular exchange of low frequency vibrational quanta results in a temperature dependent broadening and frequency shift of the high frequency vibration. Analysis of experimental data by this model yields both the exchange rates and the anharmonic couplings.

Energy Technology Data Exchange (ETDEWEB)

This paper reports on hydrolysis of 10 metal salt aqueous solutions of 6 metal oxides that was conducted in supercritical water. Continuous and rapid production of metal oxide fine particles was achieved by mixing a metal salt aqueous solution with preheated water fed from another line. The reaction time required was less than 2 min. Particle size, morphology, and crystal structure of the obtained metal (hydrous) oxides were examined. Particle size (20 to 600 nm) was different among the system but the size range was relatively narrow in all the cases.

CERN Document Server

We present here the preliminary design of ARIES-Devasthal Faint Object Spectrograph and Camera (ADFOSC), which is a multi-mode instrument for both imaging and spectroscopy. ADFOSC is the first-generation instrument to be mounted at the axial port of the Cassegrain focus on our new 3.6m optical telescope to be installed at Devasthal, Nainital. The main design goals of the instrument are : the instrument will have capability of broad- and narrow-band imaging, low-medium resolution spectroscopy, and imaging polarimetry. The operating wavelength range will be from 360 to 1000 nm and the instrument will have remote-control capability.

CERN Document Server

We study the energetics of island formation in Stranski-Krastanow growth within a parameter-free approach. It is shown that an optimum island size exists for a given coverage and island density if changes in the wetting layer morphology after the 3D transition are properly taken into account. Our approach reproduces well the experimental island size dependence on coverage, and indicates that the critical layer thickness depends on growth conditions. The present study provides a new explanation for the (frequently found) rather narrow size distribution of self-assembled coherent islands.

International Nuclear Information System (INIS)

Currentless plasma in Uragan-3M (U-3M) is produced and heated by absorption of RF power in the region of Alfven waves (AW). The process of plasma heating was explained in (2) as a result of Cherenkov absorption of energy of the fast (EM) and slow (kinetic Alfven) waves by electrons and turbulent ion heating due to excitation of short wave ion Bernstein waves (IBW). In this report we present results of studies of plasma density fluctuations showing existence of a narrow bands near the frequencies of ? ? n?ci (n=1,2,3).

Energy Technology Data Exchange (ETDEWEB)

In the well-known devices for increasing the decontamination factor in the treatment of radioactive waste water by evaporation, which consist of narrowing devices with evaporator sump and condenser, droplets of liquid and solid particles are carried over from the breeder space, which are radioactive and therefore make the decontamination factor worse. Better results are obtained if one places a fibre bed filter between the evaporator sump and the condenser, preferably in a horizontal connecting pipe between the evaporator sump and the condenser.

Energy Technology Data Exchange (ETDEWEB)

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

International Nuclear Information System (INIS)

Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of ...

Energy Technology Data Exchange (ETDEWEB)

Our objective was to evaluate the feasibility of ultra-low-dose scanning for multislice CT colonography in the detection of colorectal lesions. Twenty-seven patients (14 men, 13 women) with clinical indication for conventional colonoscopy were recruited. Multislice spiral CT (Somatom Plus 4 Volume Zoom, Siemens, Germany) examinations were performed after standard oral colonoscopic preparation and colonic distension with room air. Images were acquired using 2.5-mm collimation, 3.0-mm slice thickness, standard reconstruction kernel, 140 kVp, and 10 mAs. Supine and prone acquisitions were obtained in all patients. Images were analyzed on a workstation by two gastrointestinal radiologists. Conventional colonoscopy was performed on the same day in all patients and represented the standard of reference. Total radiation exposure was also calculated. All colorectal cancers were correctly identified at CT colonography (9 of 9, sensitivity 100%). The CT colonography also ...

International Nuclear Information System (INIS)

We use UV/optical and X-ray observations of 272 radio-quiet Type 1 active galactic nuclei and quasars to investigate the C IV Baldwin Effect (BEff). The UV/optical spectra are drawn from the Hubble Space Telescope, International Ultraviolet Explorer and Sloan Digital Sky Survey archives. The X-ray spectra are from the Chandra and XMM-Newton archives. We apply correlation and partial-correlation analyses to the equivalent widths (EWs), continuum monochromatic luminosities, and ?ox, which characterizes the relative X-ray to UV brightness. The EW of the C IV ?1549 emission line is correlated with both ?ox and luminosity. We find that by regressing l?(2500 A) with EW(C IV) and ?ox, we can obtain tighter correlations than by regressing l?(2500 A) with only EW(C IV). Both correlation and regression analyses imply that l?(2500 A) is not the only factor controlling the changes of EW(C IV); ?ox (or, equivalently, the soft X-ray emission) plays a fundamental role in the formation and variation ...