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Sample records for thin-film solar cells

  1. Investigation on Silicon Thin Film Solar Cells

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  2. Thin-film solar cell

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  3. Silicon Thin-Film Solar Cells

    2007-01-01

    We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low t...

  4. Advances in thin-film solar cells

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  5. Thin-film solar cells. Duennschichtsolarzellen

    Bloss, W.H.; Pfisterer, F.; Schock, H.W. (Stuttgart Univ. (Germany, F.R.). Inst. fuer Physikalische Elektronik)

    1990-01-01

    The authors present the state of the art in research and development, technology, production and marketing, and of the prospects of thin-film solar cells. Thin-film solar cells most used at present are based on amorphous silicon and on the compound semiconductors CuInSe{sub 2} and CdTe. Efficiencies in excess 12% have been achieved (14.1% with CuInSe{sub 2}). Stability is the main problem with amorphous silicon. Thin-film solar cells made from compound semiconductors do not have this problem, though their cost-effective series production needs to be shown still. The development potential of the three types mentioned will be ca. 30% in terms of efficiency: in terms of production cost, it is estimated with some certainty to be able to reach the baseline of 1 DM/Watt peak output (W{sub p}). (orig.).

  6. US Polycrystalline Thin Film Solar Cells Program

    Ullal, Harin S.; Zweibel, Kenneth; Mitchell, Richard L.

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R and D on copper indium diselenide and cadmium telluride thin films. The objective of the program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15 to 20 percent), low-cost ($50/m(sup 2)), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2 and CdTe with subcontracts to start in spring 1990.

  7. US polycrystalline thin film solar cells program

    Ullal, H S; Zweibel, K; Mitchell, R L [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  8. Recent developments in thin film solar cells

    Dhere, N.G. (Inst. Militar de Engenharia, Rio de Janeiro, RJ (Brazil))

    1990-12-15

    In recent years, remarkable progress has been made in improving the photovoltaic (PV) conversion efficiencies of thin film solar cells. The best active-area efficiencies (air mass 1.5) of thin film solar cells reported are as follows: polycrystalline CuInSe{sub 2}, 14.1%; CuIn(Ga)Se{sub 2}, 12.9%; CdTe, 12.3%, total area; single-junction hydrogenated amorphous silicon (a-Si:H), 12.0%; multiple-junction a-Si:H, 13.3%; cleaved epitaxial GaAs-Ga{sub 1-x}Al{sub x}As, 21.5%, total area. Laboratory methods for preparing small thin film solar cells are evaporation, closed-space sublimation, closed-space vapor transport, vapor phase epitaxy and metallo-organic chemical vapor deposition, while economic large-area deposition techniques such as sputtering, glow discharge reduction, electrodeposition, spraying and screen printing are being used for module fabrication. The following aperture-area efficiencies have been measured, at the Solar Energy Research Inst., for thin film modules: a-Si:H, 9.8%, 933 cm{sup 2}; CuIn(Ga)Se{sub 2}, 11.1%, 938 cm{sup 2}; CdTe, 7.3%, 838 cm{sup 2}. The instability issue of a-Si:H continues to be a high priority area. It is necessary to improve the open-circuit voltage of CuIn(Ga)Se{sub 2} cells, which do not seem to exhibit any intrinsic degradation mechanisms. With continued progress and increased production, PV modules are likely to become competitive for medium-scale power requirements in the mid-1990s. (orig.).

  9. Thin-film cadmium telluride solar cells

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  10. Thin-film silicon solar cell technology

    Shah, A.V.; Meier, J.; Kroll, U.; Droz, C.; Bailat, J. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Schade, H. [RWE Schott Solar GmbH, Putzbrunn (Germany); Vanecek, M. [Academy of Sciences, Prague (Czech Republic). Inst. of Physics; Vallat Sauvain, E.; Wyrsch, N. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Unaxis SPTec S A, Neuchatel (Switzerland)

    2004-07-01

    This paper describes the use, within p-i-n- and n-i-p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon ({mu}c-Si:H) thin films (layers), both deposited at low temperatures (200{sup o}C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p-i-n-type solar cells, as fabricated so far, are compared in their key parameters (J{sub sc},FF,V{sub oc}) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the {mu}c-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of

  11. Antimony selenide thin-film solar cells

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  12. Nanocrystalline silicon based thin film solar cells

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  13. Materials availability for thin film solar cells

    Makita, Yunosuke

    1997-04-01

    Materials availability is one of the most important factors when we consider the mass-production of next generation photovoltaic devices. "In (indium)" is a vital element to produce high efficient thin film solar cells such as InP and CuIn(Ga)Se2 but its lifetime as a natural resource is suggested to be of order of 10˜15 years. The lifetime of a specific natural resource as an element to produce useful device substances is directly related with its abundance in the earth's crust, consumption rate and recycling rate (if recycling is economically meaningful). The chemical elements having long lifetime as a natural resource are those existing in the atmosphere such as N (nitrogen) and O (oxygen); the rich elements in the earth's crust such as Si, Ca, Sr and Ba; the mass-used metals such as Fe (iron), Al (aluminum) and Cu (copper) that reached the stage of large-scale recycling. We here propose a new paradigm of semiconductor material-science for the future generation thin film solar cells in which only abundant chemical elements are used. It is important to remark that these abundant chemical elements are normally not toxic and are fairly friendly to the environment. β-FeSi2 is composed of two most abundant and nontoxic chemical elements. This material is one of the most promising device materials for future generation energy devices (solar cells and thermoelectric device that is most efficient at temperature range of 700-900 °C). One should remind of the versatility of β-FeSi2 that this material can be used not only as energy devices but also as photodetector, light emitting diode and/or laser diode at the wavelength of 1.5 μm that can be monolithically integrated on Si substrates due to the relatively small lattice mismatch.

  14. Light management in thin-film silicon solar cells

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved with silicon-based solar cells. To stay competitive with bulk crystalline silicon and other thin-film solar cell technologies, thin-film silicon solar cells have to achieve a conversion efficiency l...

  15. Silicon Thin-Film Solar Cells

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  16. Copper zinc tin sulfide-based thin film solar cells

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  17. Broadband back grating design for thin film solar cells

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  18. Thin film cadmium telluride solar cells

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  19. UV imprinting for thin film solar cell application

    Escarré, J.; Battaglia, C.; Söderström, K.; Pahud, C.; Biron, R.; Cubero, O.; Haug, F.-J.; Ballif, C.

    2012-02-01

    UV imprinting is an interesting, low cost technique to produce large area thin film solar cells incorporating nanometric textures. Here, we review and present new results confirming that replicas of the most common textures used in photovoltaics can be obtained by UV imprinting with an excellent fidelity. The use of these replicas as substrates for amorphous and micromorph thin film silicon solar cells is also shown, together with a comparison with devices obtained on the original textures.

  20. UV imprinting for thin film solar cell application

    Escarre, J; Battaglia, C; Soederstroem, K.; Pahud, C.; Biron, R.; Cubero, O.; Haug, F.-J.; Ballif, C.

    2012-01-01

    UV imprinting is an interesting, low cost technique to produce large area thin film solar cells incorporating nanometric textures. Here, we review and present new results confirming that replicas of the most common textures used in photovoltaics can be obtained by UV imprinting with an excellent fidelity. The use of these replicas as substrates for amorphous and micromorph thin film silicon solar cells is also shown, together with a comparison with devices obtained on the original textures.

  1. Recent technological advances in thin film solar cells

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  2. UV imprinting for thin film solar cell application

    UV imprinting is an interesting, low cost technique to produce large area thin film solar cells incorporating nanometric textures. Here, we review and present new results confirming that replicas of the most common textures used in photovoltaics can be obtained by UV imprinting with an excellent fidelity. The use of these replicas as substrates for amorphous and micromorph thin film silicon solar cells is also shown, together with a comparison with devices obtained on the original textures

  3. Light trapping in thin film organic solar cells

    Zheng Tang

    2014-10-01

    Full Text Available A major issue in organic solar cells is the poor mobility and recombination of the photogenerated charge carriers. The active layer has to be kept thin to facilitate charge transport and minimize recombination losses. However, optical losses due to inefficient light absorption in the thin active layers can be considerable in organic solar cells. Therefore, light trapping schemes are critically important for efficient organic solar cells. Traditional light trapping schemes for thick solar cells need to be modified for organic thin film solar cells in which coherent optics and wave effects play a significant role. In this review, we discuss the light trapping schemes for organic thin film solar cells, which includes geometric engineering of the structure of the solar cell at the micro and nanoscale, plasmonic structures, and more.

  4. Light management in thin-film silicon solar cells

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved

  5. Annealing of Solar Cells and Other Thin Film Devices

    Escobar, Hector; Kuhlman, Franz; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

    2001-01-01

    Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.

  6. Indium tin oxide-silicon thin film solar cell

    Heterojunction solar cells consisting of amorphous indium tin oxide (ITO) thin films on silicon films have been fabricated and studied. The results show that the devices give a photovoltaic effect and rectifying characteristics. One of the main characteristics of amorphous ITO thin films is better transparency (>85%) over the complete useful window of the solar spectrum. The polarity observed is found to be consistent with V/sub oc/ = 0.34 volt, I/sub sc/ = 22mA/cm/sup 2/ and fill factor = 0.48. An attempt has been made to understand the conduction mechanism of indium tin oxide - silicon heterojunction

  7. Thin Film Solar Cells and their Optical Properties

    Stanislav Jurecka

    2006-01-01

    Full Text Available In this work we report on the optical parameters of the semiconductor thin film for solar cell applications determination. The method is based on the dynamical modeling of the spectral reflectance function combined with the stochastic optimization of the initial reflectance model estimation. The spectral dependency of the thin film optical parameters computations is based on the optical transitions modeling. The combination of the dynamical modeling and the stochastic optimization of the initial theoretical model estimation enable comfortable analysis of the spectral dependencies of the optical parameters and incorporation of the microstructure effects on the solar cell properties. The results of the optical parameters ofthe i-a-Si thin film determination are presented.

  8. Molecular solution processing of metal chalcogenide thin film solar cells

    Yang, Wenbing

    2013-01-01

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (C...

  9. Low cost thin film poly-silicon solar cells

    NONE

    2005-07-01

    This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

  10. Thin-film crystalline silicon solar cells

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  11. Polycrystalline thin-film solar cells and modules

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  12. Polycrystalline thin-film solar cells and modules

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  13. Thin-film silicon solar cell technology

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142. ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogen erated amorphous silicon(a-Si:H) * hydrogen erated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  14. Light trapping effects in thin film silicon solar cells

    Haug, FJ; Söderström, T; Dominé, D.; Ballif, C.

    2009-01-01

    We present advanced light trapping concepts for thin film silicon solar cells. When an amorphous and a microcrystalline absorber layers are combined into a micromorph tandem cell, light trapping becomes a challenge because it should combine the spectral region from 600 to 750 nm for the amorphous top cell and from 800 to 1100 for the microcrystalline bottom cell. Because light trapping is typically achieved by growing on textured substrates, the effect of interface textures on the material an...

  15. Buried contact multijunction thin film silicon solar cell

    Green, M. [Univ. of New South Wales, Sydney (Australia)

    1995-08-01

    In early 1994, the Center for Photovoltaic Devices and Systems announced the filing of patent applications on an improved silicon thin film photovoltaic module approach. With material costs estimated to be about 20 times lower than those in present silicon solar cell modules along with other production advantages, this technology appears likely to make low cost, high performance solar modules available for the first time. This paper describes steps involved in making a module and module performance.

  16. CZTSSe thin film solar cells: Surface treatments

    Joglekar, Chinmay Sunil

    Chalcopyrite semiconducting materials, specifically CZTS, are a promising alternative to traditional silicon solar cell technology. Because of the high absorption coefficient; films of the order of 1 micrometer thickness are sufficient for the fabrication of solar cells. Liquid based synthesis methods are advantageous because they are easily scalable using the roll to roll manufacturing techniques. Various treatments are explored in this study to enhance the performance of the selenized CZTS film based solar cells. Thiourea can be used as a sulfur source and can be used to tune band gap of CZTSSe. Bromine etching can be used to manipulate the thickness of sintered CZTSSe film. The etching treatment creates recombination centers which lead to poor device performance. Various after treatments were used to improve the performance of the devices. It was observed that the performance of the solar cell devices could not be improved by any of the after treatment steps. Other surface treatment processes are explored including KCN etching and gaseous H2S treatments. Hybrid solar cells which included use of CIGS nanoparticles at the interface between CZTSSe and CdS are also explored.

  17. Design of a thin film CdTe solar cell

    Meyers, P.V.

    1988-01-15

    Cadmium telluride was originally considered for thin film solar cells because of its optimum band gap, high optical absorption coefficient and ability to be doped. Furthermore, it is a stable compound which can be produced by a wide variety of methods from stable raw materials. As thin film photovoltaics mature, however, it is clear that several more subtle attributes have a significant impact on the viability of commercialization. We discuss the observations which have provided insight and direction to Ametek's CdTe solar cell program. Rather than try to modify the inherent material properties of CdTe, advances have been made by designing a solar cell that exploits existing properties. Specifically, the tendency to self-compensate, which makes low resistance contacting difficult, is turned into an advantage in the n-i-p configuration; the CdTe provides an intrinsic layer with good carrier collection efficiency.

  18. Metal nanoparticles for thin film solar cells

    Gritti, Claudia

    nanoantennas absorbing photons with energy smaller than the semiconductor gap but larger than the Schottky barrier height between metal and semiconductor. The optimization of the fabrication process of GaAs and a-Si:H Schottky solar cells is first conducted and subsequently, the incorporation of Au or Ag...... efficiency in such spectral range; after an overview of the different technologies available today, the employment of localized surface plasmons (LSPs) through the incorporation of metallic nanoparticles within the photovoltaic device is chosen as a cheap and simple method. The LSP resonance wavelength...... to increase light trapping and can come along regardless, we aim, as first target, to absorb forbidden (for the semiconductor) photons by the NPs which can excite hot electrons inside the metal NP and emit them directly into the conduction band of the solar cell semiconductor, without going through...

  19. Light-Induced Degradation of Thin Film Silicon Solar Cells

    Hamelmann, F. U.; Weicht, J. A.; Behrens, G.

    2016-02-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods.

  20. Laser annealing of thin film polycrystalline silicon solar cell

    Chowdhury A.

    2013-11-01

    Full Text Available Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.

  1. Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

    Kodigala, Subba Ramaiah

    2013-01-01

    The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

  2. Interfacial Properties of CZTS Thin Film Solar Cell

    N. Muhunthan

    2014-01-01

    Full Text Available Cu-deficient CZTS (copper zinc tin sulfide thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

  3. New 3-dimensional nanostructured thin film silicon solar cells

    Vaněček, Milan; Neykova, Neda; Babchenko, Oleg; Purkrt, Adam; Poruba, Aleš; Remeš, Zdeněk; Holovský, Jakub; Hruška, Karel; Meier, J.; Kroll, U.

    München: WIP- Renewable energies, 2010, s. 2763-2766. ISBN 3-936338-26-4. [European Photovoltaic Solar Energy Conference /25./ and World Conference on Photovoltaic Energy Conversion /5./. Valencia (ES), 06.09.2010-10.09.2010] R&D Projects: GA MŠk(CZ) 7E09057 EU Projects: European Commission(XE) 214134 - N2P Institutional research plan: CEZ:AV0Z10100521 Keywords : thin film solar cells, * TCO transparent conductive oxides * a-Si * high stable efficiency, * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. Methods for fabricating thin film III-V compound solar cell

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  5. Thin Film Solar Cells: Organic, Inorganic and Hybrid

    Dankovich, John

    2004-01-01

    Thin film solar cells are an important developing resource for hundreds of applications including space travel. In addition to being more cost effective than traditional single crystal silicon cells, thin film multi-crystaline cells are plastic and light weight. The plasticity of the cells allows for whole solar panels to be rolled out from reams. Organic layers are being investigated in order to increase the efficiency of the cells to create an organic / inorganic hybrid cell. The main focus of the group is a thin film inorganic cell made with the absorber CuInS2. So far the group has been successful in creating the layer from a single-source precursor. They also use a unique method of film deposition called chemical vapor deposition for this. The general makeup of the cell is a molybdenum back contact with the CuInS2 layer, then CdS, ZnO and aluminum top contacts. While working cells have been produced, the efficiency so far has been low. Along with quantum dot fabrication the side project of this that is currently being studied is adding a polymer layer to increase efficiency. The polymer that we are using is P3OT (Poly(3-octylthiopene-2,5-diyll), retroregular). Before (and if) it is added to the cell, it must be understood in itself. To do this simple diodes are being constructed to begin to look at its behavior. The P3OT is spin coated onto indium tin oxide and silver or aluminum contacts are added. This method is being studied in order to find the optimal thickness of the layer as well as other important considerations that may later affect the composition of the finished solar cell. Because the sun is the most abundant renewable, energy source that we have, it is important to learn how to harness that energy and begin to move away from our other depleted non-renewable energy sources. While traditional silicon cells currently create electricity at relatively high efficiencies, they have drawbacks such as weight and rigidness that make them unattractive

  6. Plasmonic versus dielectric enhancement in thin-film solar cells

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    Several studies have indicated that broadband absorption of thin-film solar cells can be enhanced by use of surface-plasmon induced resonances of metallic parts like strips or particles. The metallic parts may create localized modes or scatter incoming light to increase absorption in thin...... its metallic counterpart. We show that the enhanced normalized short-circuit current for a cell with silicon strips can be increased 4 times compared to the best performance for strips of silver, gold, or aluminium. For this particular case, the simple dielectric grating may outperform its plasmonic...

  7. Development of CIGS2 thin film solar cells

    Research and development of CuIn1-xGa xSe2-yS y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H2S. Presently large (15 cm x 10 cm) CuIn1-xGa xS2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H2S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

  8. Characterization of thin-film silicon materials and solar cells through numerical modeling

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film sili

  9. Thin-film intermediate band chalcopyrite solar cells

    Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

  10. Thin-film Solar Cells for Space Applications

    Lush, Gregory B.

    2003-01-01

    The proposed work supports MURED goals by fostering research and development activities at Fisk and UTEP which contribute substantially to NASA's mission, preparing faculty and students at Fisk and UTEP to successfully participate in the conventional, competitive research and education process, and increasing the number of students to successfully complete degrees in NASA related fields. The project also addresses directly a core need of NASA for space power and is consistent with the Core Responsibilities of the John Glenn Space Center. Current orbital missions are limited by radiation from high energy particles trapped in the Van Allen Belt because that solar radiation degrades cell performance by damaging the crystalline lattice. Some potential orbits have been inaccessible because the radiation is too severe. Thin-film solar cells, if they can be adapted for use in the unfriendly space environment, could open new orbits to satellites by providing a radiation hard source of power. The manned mission to Mars requires photovoltaic devices for both the trip there and as a power supply on the surface. Solar arrays using thin films offer a low power/weight ratio solution that provides reliable photovoltaic power.

  11. Analysis of loss mechanisms in polycrystalline thin film solar cells

    Sites, J. R.

    1990-08-01

    Our goal for thin-film polycrystalline solar cell analysis was to increase the useful information extracted from relatively straightforward electrical measurements. The strategy was to (1) systematize measurements and reporting, (2) organize results in terms of quantitative values for individual sources of current and voltage loss, and (3) evaluate possible analytical techniques to enhance precision and avoid pitfalls, and (4) insist on a viable physical explanation of each loss mechanism. Current-voltage, quantum efficiency, and capacitance measurements on CuInSe2 and CdTe solar cells from a variety of sources have been analyzed. In many cases losses were identified that may be lessened relatively easily. However, the operating voltage loss due to excessive forward recombination current throughout the depletion region remains the primary obstacle to efficiencies competitive with single crystal cells.

  12. Analysis of loss mechanisms in polycrystalline thin film solar cells

    Sites, J.R. (Colorado State Univ., Fort Collins, CO (USA))

    1990-08-01

    Our goal for thin-film polycrystalline solar cell analysis was to increase the useful information extracted from relatively straightforward electrical measurements. The strategy was to (1) systematize measurements and reporting, (2) organize results in terms of quantitative values for individual sources of current and voltage loss, and (3) evaluate possible analytical techniques to enhance precision and avoid pitfalls, and (4) insist on a viable physical explanation of each loss mechanism. Current-voltage, quantum efficiency, and capacitance measurements on CuInSe{sub 2} and CdTe solar cells from a variety of sources have been analyzed. In many cases losses were identified that may be lessened relatively easily. However, the operating voltage loss due to excessive forward recombination current throughout the depletion region remains the primary obstacle to efficiencies competitive with single crystal cells. 1 tab., 4 figs., 26 refs.

  13. Chemically Deposited Thin-Film Solar Cell Materials

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  14. 2D modelling of polycrystalline silicon thin film solar cells

    Leendertz Caspar

    2013-07-01

    Full Text Available The influence of grain boundary (GB properties on device parameters of polycrystalline silicon (poly-Si thin film solar cells is investigated by two-dimensional device simulation. A realistic poly-Si thin film model cell composed of antireflection layer, (n+-type emitter, thick p-type absorber, and (p+-type back surface field was created. The absorber consists of a low-defect crystalline Si grain with an adjacent highly defective grain boundary layer. The performances of a reference cell without GB, one with n-type and one with p-type GB, respectively, are compared. The doping concentration and defect density at the GB are varied. It is shown that the impact of the grain boundary on the poly-Si cell is twofold: a local potential barrier is created at the GB, and a part of the photogenerated current flows within the GB. Regarding the cell performance, a highly doped n-type GB is less critical in terms of the cell’s short circuit current than a highly doped p-type GB, but more detrimental in terms of the cell’s open circuit voltage and fill factor.

  15. Commercial Development Of Ovonic Thin Film Solar Cells

    Ovshinsky, Stanford R.

    1983-09-01

    subsequent paper) which has clearly demonstrated that the basic barrier to low-cost production has been broken through and that one can now speak realistically of delivering power directly from the sun for under a dollar per peak watt merely by making larger versions of this basic continuous web, large-area thin-film machine. We have made one square foot amorphous silicon alloy PIN devices with conversion efficiencies in the range of 7%, and in the laboratory, we have reported smaller area PIN de-vices in the 10% conversion efficiency range. In addition, much higher energy conversion efficiencies can be obtained within the same process by using multi-cell layered or tandem thin-film solar cell structures (see Figure 1). These devices exhibit enhanced efficiency by utilizing a wider range of the solar spectrum. Since the theoretical maximum efficiency for multi-cell structures is over 60%, one can certainly realistically anticipate the pro-duction of thin-film amorphous photovoltaic devices with efficiencies as high as 30%. Our production device is already a two-cell tandem, as we have solved not only the problems of interfacing the individual cell components but also the difficulties associated with a one foot square format deposited on a continuous web. Figure 2 shows a continuous roll of Ovonic solar cells. Realistic calculations for a three-cell tandem thin-film device using amorphous semiconductor alloys with 1.8eV, 1.5eV, and 1.0eV optical band gaps indicate that solar energy conversion efficiencies of 20-30% can be achieved.

  16. Trends in development of CuInSe sub 2 thin-film solar cells

    Nakata, Tokio; Kunioka, Akio (Aoyama Gakuin Univ. School of Science and Engineering, Tokyo, Japan (JP))

    1988-11-30

    Recently, efforts for developing thin-film solar cells aimed to help reduce appliance cost are extensive. Already, amorphous Si solar cells and CdTe solar cells have been introduced to the market as power supply for hand-held calculators and other domestic appliances. Before thin-film solar cells can be used for electric power, the conversion efficiency must be improved. In this circumstance, attention is focused on CuInSe{sub 2} thin-film solar cells. Great efficiency improvement is expected when they are combined with amorphous Si solar cells into a tandem structure. This material will not deteriorate during a reasonable period of use, so it is very reliable. This paper discusses recent activities for developing CuInSe{sub 2} thin-film solar cells and tandem solar cells combining amorphous Si and CuInSe{sub 2} solar cells and discusses the future outlook. 23 refs., 7 figs., 4 tabs.

  17. Thin-film CdS/CdTe solar cells

    A thin-film solar cell with the configuration soda-lime glass ITO/CdS/CdTe/Au was reported earlier to have more than 10% conversion efficiency. To further improve the low-cost potential of the device, an SnO/sub 2/ layer was developed to replace ITO, and a new contact to CdTe using Ni or stainless steel to replace Au. The contact also improves the stability of the device. A low-cost method for monolithic integration of these cells to make a module is discussed. By this method, a module of 32 cm/sup 2/ area and 8.5% efficiency was fabricated. A simple and effective ''cross-cut'' method for minimizing the effects of shorting defects is also described

  18. High-efficient n-i-p thin-film silicon solar cells

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  19. Potential of thin-film solar cell module technology

    Shimada, K.; Ferber, R. R.; Costogue, E. N.

    1985-01-01

    During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

  20. Transparent electrode requirements for thin film solar cell modules

    Rowell, Michael W.

    2011-01-01

    The transparent conductor (TC) layer in thin film solar cell modules has a significant impact on the power conversion efficiency. Reflection, absorption, resistive losses and lost active area either from the scribed interconnect region in monolithically integrated modules or from the shadow losses of a metal grid in standard modules typically reduce the efficiency by 10-25%. Here, we perform calculations to show that a competitive TC must have a transparency of at least 90% at a sheet resistance of less than 10 Ω/sq (conductivity/absorptivity ≥ 1 Ω -1) for monolithically integrated modules. For standard modules, losses are much lower and the performance of alternative lower cost TC materials may already be sufficient to replace conducting oxides in this geometry. © 2011 The Royal Society of Chemistry.

  1. Molecular solution processing of metal chalcogenide thin film solar cells

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

  2. Characterization of thin-film silicon materials and solar cells through numerical modeling

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film silicon used in this type of solar cells is in a different phase than c-Si and usually alloyed with hydrogen. The most common thin-film silicon phases are hydrogenated amorphous silicon (a-Si:H) and hy...

  3. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  4. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  5. Amorphous silicon thin films: The ultimate lightweight space solar cell

    Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

    1994-01-01

    Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

  6. Charge carrier dynamics in thin film solar cells

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  7. A Review on Development Prospect of CZTS Based Thin Film Solar Cells

    Xiangbo Song

    2014-01-01

    Full Text Available Cu2ZnSnS4 is considered as the ideal absorption layer material in next generation thin film solar cells due to the abundant component elements in the crust being nontoxic and environmentally friendly. This paper summerized the development situation of Cu2ZnSnS4 thin film solar cells and the manufacturing technologies, as well as problems in the manufacturing process. The difficulties for the raw material’s preparation, the manufacturing process, and the manufacturing equipment were illustrated and discussed. At last, the development prospect of Cu2ZnSnS4 thin film solar cells was commented.

  8. High-efficient n-i-p thin-film silicon solar cells

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar cells the interfaces between different layers are very important. In this thesis the influence of some important interfaces in the n-i-p configuration solar cells on the solar-cell performance has ...

  9. Photovoltaic solar cell from low-cost thin-film technology

    Full text : One of the main hindrances of using solar energy for electrical power supply is the high initial cost. Thin-film technologies hold considerable promise for substantial cost reduction for photovoltaic solar cells. The paper reviews the present state of the most advanced thin-film technologies. Amorphous silicon solar cells have surmounted the barrier to mass production. Pilot manufacturing lines are under construcion for CdTe thin-film module. Cu(In, Ga)Se2 has reached a record efficiency of 18.8 percent in the laboratory and pilot productions have benn announced by various companies

  10. Photovoltaic solar cell from low-cost thin-film technology

    One of the main hindrances of using solar energy for electrical power supply is the high initial cost. Thin-film technologies hold considerable promise for substantial cost reduction for photovoltaic solar cells. The paper reviews the present state of the most advanced thin-film technologies. Amorphous silicon (a-Si:H) solar cells have surmounted the barrier to mass production. Pilot manufacturing lines are under construction for CdTe thin-film module. Cu(In, Ga)Se2 has reached a record efficiency of 18.8 percent in the laboratory and pilot productions have been announced by various companies

  11. Advances in thin-film solar cells for lightweight space photovoltaic power

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  12. Influence of CuxS back contact on CdTe thin film solar cells

    Lei Zhi; Feng Lianghuan; Zeng Guanggen; Li Wei; Zhang Jingquan; Wu Lili; Wang Wenwu

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells.The characteristics of the films deposited on Si-substrate are studied by XRD.The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing,samples are in polycrystalline phases with increasing temperature.The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells.When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best.The energy conversion efficiency can be higher than 12.19%,the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  13. Molybdenum Back-Contact Optimization for CIGS Thin Film Solar Cell

    J.R. Ray

    2011-01-01

    Full Text Available Molybdenum (Mo thin films are most widely used as an ohmic back-contact in the copper indium diselenide (CIS and its alloy copper indium gallium diselenide (CIGS based thin film solar cell. Radio frequency (RF magnetron sputtering system used to deposit Mo thin films on soda lime glass substrate. The deposition was carried out using argon (Ar gas at different Ar controlled (working pressures (1 mTorr to 10 mTorr and at different RF powers (60 W to 100 W. The influence of both the working pressure and the RF power on the Mo thin films was studied by investigating its structural, morphological, electrical, and optical measurements. The results reveal that a stress-free, low-sheet-resistance (~1 Ω/cm2, and reflecting (~ 55 % Mo thin film was observed at 1 mTorr working pressure and 100 W RF power.

  14. Preparation of vanadium diselenide thin films and their application in CdTe solar cells

    Vanadium diselenide thin films were prepared by electron beam evaporation. The properties of vanadium diselenide thin films were investigated using X-ray diffraction, scanning electron microscope, transmission spectra, electrical and Hall measurements. To further investigate the application of vanadium diselenide thin films, device performance in CdTe solar cells with a vanadium diselenide layer was also studied. The results indicate that vanadium diselenide thin films had a stable hexagonal structure after annealing. The thin films were p-type semiconductor materials with the high work function and high carrier concentration. Vanadium diselenide thin films could form a good ohmic contact to CdTe solar cells. Thus, cell performance was greatly improved when introduced a vanadium diselenide buffer layer. - Highlights: • VSe2 was prepared by electron beam evaporation. • VSe2 was a p-type material with the high work function and high carrier concentration. • VSe2 was used as a Cu-free buffer layer in CdTe solar cells. • Performance of CdTe solar cells was improved

  15. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    de Jong, M.M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic subst

  16. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  17. Hydrogen passivation of polycrystalline Si thin film solar cells

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage VOC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage Vbrk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in Vbrk. Plasma simulations were carried out, which indicate that best VOC corresponds to a minimum in ion energy. VOC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the VOC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in VOC, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature Tdep=200-700 C and were characterized by Raman, ESR and VOC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.1016 cm-3 after passivation was found for poly

  18. High power impulse magnetron sputtering of CIGS thin films for high efficiency thin film solar cells

    Olejníček, Jiří; Hubička, Zdeněk; Kohout, Michal; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2014-01-01

    Roč. 1, č. 3 (2014), s. 135-137. ISSN 2336-2626 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HiPIMS * emission spectroscopy * thin films * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics http://fyzika.feld.cvut.cz/misc/ppt/articles/2014/olejnicek.pdf

  19. Indium sulfide thin films as window layer in chemically deposited solar cells

    Indium sulfide (In2S3) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO3)3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In2S3. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In2S3 thin films are photosensitive with an electrical conductivity value in the range of 10−3–10−7 (Ω cm)−1, depending on the film preparation conditions. We have demonstrated that the In2S3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO2:F/In2S3/Sb2S3/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm2. - Highlights: • In2S3 thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In2S3 films. • We made chemically deposited solar cells using the In2S3 thin films

  20. Poly CdTe thin films solar cells

    Marfaing, Y.

    1982-01-01

    CdTe is potentially one of the most interesting materials for the photovoltaic conversion of solar energy. The width of its forbidden band of 1.5 eV puts it to the maximum of the theoretical yield curve (24%). Its high coefficient of optical absorption in the main band allows the use of thin films (2 to 3 microns). It is appropriate for production of thin polycristalline films with good optical and photoelectrical properties, which is probably due to its ionic character. The goal of the research performed as part of this contract is to determine the optimum conditions for the use of CdTe as photovoltaic converter. The authors think that the virtual efficiency of this material calls for confirmation and evidence provided by a systematic and profound investigation.

  1. Hydrogen passivation of polycrystalline Si thin film solar cells

    Gorka, Benjamin

    2010-12-15

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

  2. Spray-on Thin Film PV Solar Cells: Advances, Potentials and Challenges

    Morteza Eslamian

    2014-01-01

    Full Text Available The capability to fabricate photovoltaic (PV solar cells on a large scale and at a competitive price is a milestone waiting to be achieved. Currently, such a fabrication method is lacking because the effective methods are either difficult to scale up or expensive due to the necessity for fabrication in a vacuum environment. Nevertheless, for a class of thin film solar cells, in which the solar cell materials can be processed in a solution, up scalable and vacuum-free fabrication techniques can be envisioned. In this context, all or some layers of polymer, dye-sensitized, quantum dot, and copper indium gallium selenide thin film solar cells illustrate some examples that may be processed in solution. The solution-processed materials may be transferred to the substrate by atomizing the solution and carrying the spray droplets to the substrate, a process that will form a thin film after evaporation of the solvent. Spray coating is performed at atmospheric pressure using low cost equipment with a roll-to-roll process capability, making it an attractive fabrication technique, provided that fairly uniform layers with high charge carrier separation and transport capability can be made. In this paper, the feasibility, the recent advances and challenges of fabricating spray-on thin film solar cells, the dynamics of spray and droplet impaction on the substrate, the photo-induced electron transfer in spray-on solar cells, the challenges on characterization and simulation, and the commercialization status of spray-on solar cells are discussed.

  3. Broadband Absorption Enhancement in Thin Film Solar Cells Using Asymmetric Double-Sided Pyramid Gratings

    Alshal, Mohamed A.; Allam, Nageh K.

    2016-07-01

    A design for a highly efficient modified grating crystalline silicon (c-Si) thin film solar cell is demonstrated and analyzed using the two-dimensional (2-D) finite element method. The suggested grating has a double-sided pyramidal structure. The incorporation of the modified grating in a c-Si thin film solar cell offers a promising route to harvest light into the few micrometers active layer. Furthermore, a layer of silicon nitride is used as an antireflection coating (ARC). Additionally, the light trapping through the suggested design is significantly enhanced by the asymmetry of the top and bottom pyramids. The effects of the thickness of the active layer and facet angle of the pyramid on the spectral absorption, ultimate efficiency (η), and short-circuit current density (J sc) are investigated. The numerical results showed 87.9% efficiency improvement over the conventional thin film c-Si solar cell counterpart without gratings.

  4. Textured conducting glass by nanosphere lithography for increased light absorption in thin-film solar cells

    Nanoscale surface texturing in thin-film solar cells has been shown to enhance device efficiency by increasing light absorption through reduced reflectance and increased light scattering across a broad range of wavelengths and angles. However, light trapping in the industrial thin-film cells is still sub-optimal and creating optimized nanoscale texture over a large area remains challenging. In this article, we present a well-controlled low-cost process to fabricate a periodic nanocone texture optimized for maximum light absorption in thin-film microcrystalline silicon solar cells. The texture is fabricated using nanosphere lithography with the period controlled by the nanosphere diameter and the texture shape and aspect ratio controlled by the reactive ion etching conditions. Finite-difference time-domain optical simulations are used to optimize the texture in the state-of-the-art microcrystalline cells, and optical absorption measurements show that the same cells fabricated on the optimized nanocone-textured substrates exhibit a relative short-circuit current increase of close to 30% compared to a reference state-of-the-art cell with a randomly textured zinc oxide layer. This nanocone texturing technique is compatible with standard thin-film cell fabrication processes and can also be used for other thin-film cells (CIGS, CdTe, CZTS, etc) to maximize light absorption and minimize layer thickness enabling more efficient carrier collection and lower overall cost. (paper)

  5. Hybrid solar cells using CdS thin films deposited via spray pyrolysis technique

    The paper presents the photovoltaic performance of hybrid solar cells comprising of thin films of cadmium sulphide and poly(3-hexyl)thiophene. Cadmium sulphide thin films were deposited using spray pyrolysis technique. Current-voltage characterizations were performed for cadmium sulphide/poly(3-hexyl)thiophene heterojunctions in dark and under illumination (100 mWcm−2). The best device yields a short circuit current density of 1.54 mA/cm2, an open circuit voltage of 343 mV, and a power conversion efficiency of 0.15%. - Highlights: • Hybrid solar cells were fabricated using CdS and poly(3-hexyl)thiophene. • CdS thin films were grown by spray pyrolysis technique. • The best cell performance was achieved for the 100 nm thick CdS films. • The highest short circuit current was measured as 1.54 mAcm−2 for the best cell

  6. Characterization of thin film ZnCdS/CdTe solar cells

    Mahammad Hussain, O.; Sreedhara Reddy, P.; Srinivasalu Naidu, B.; Uthanna, S.; Jayarama Reddy, P. (Sri Venkateswara Univ., Tirupati (India). Dept. of Physics)

    1991-07-01

    n-ZnCdS/p-CdTe polycrystalline thin film solar cells were fabricated by laser evaporating CdTe onto sprayed ZnCdS films. The cells were characterized by studying current-voltage, capacitance-voltage and spectral response measurements. A maximum efficiency of 7.6% was observed for a cell area of 1 cm{sup 2}. (author).

  7. A Review on Development Prospect of CZTS Based Thin Film Solar Cells

    Xiangbo Song; Xu Ji; Ming Li; Weidong Lin; Xi Luo; Hua Zhang

    2014-01-01

    Cu2ZnSnS4 is considered as the ideal absorption layer material in next generation thin film solar cells due to the abundant component elements in the crust being nontoxic and environmentally friendly. This paper summerized the development situation of Cu2ZnSnS4 thin film solar cells and the manufacturing technologies, as well as problems in the manufacturing process. The difficulties for the raw material’s preparation, the manufacturing process, and the manufacturing equipment were illustrate...

  8. Transparent conductive zinc oxide basics and applications in thin film solar cells

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  9. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

    We have investigated fine grained polycrystalline silicon thin films grown by direct chemical vapor deposition on oxidized silicon substrates. More specifically, we analyze the influence of the doping type on the properties of this model polycrystalline silicon material. This includes an investigation of defect passivation and benchmarking of minority carrier properties. In our investigation, we use a variety of characterization techniques to probe the properties of the investigated polycrystalline silicon thin films, including Fourier Transform Photoelectron Spectroscopy, Electron Spin Resonance, Conductivity Activation, and Suns-Voc measurements. Amphoteric silicon dangling bond defects are identified as the most prominent defect type present in these layers. They are the primary recombination center in the relatively lowly doped polysilicon thin films at the heart of the current investigation. In contrast with the case of solar cells based on Czochralski silicon or multicrystalline silicon wafers, we conclude that no benefit is found to be associated with the use of n-type dopants over p-type dopants in the active absorber of the investigated polycrystalline silicon thin-film solar cells. - Highlights: • Comparison of n- and p-type absorbers for thin-film poly-Si solar cells • Extensive characterization of the investigated layers' characteristics • Literature review pertaining the use of n-type and p-type dopants in silicon

  10. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

    Deckers, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium); Bourgeois, E. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Jivanescu, M. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Abass, A. [Photonics Research Group (INTEC), Ghent University-imec, Sint-Pietersnieuwstraat 41, B-9000 Ghent (Belgium); Van Gestel, D.; Van Nieuwenhuysen, K.; Douhard, B. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); D' Haen, J.; Nesladek, M.; Manca, J. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Gordon, I.; Bender, H. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); Stesmans, A. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Mertens, R.; Poortmans, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium)

    2015-03-31

    We have investigated fine grained polycrystalline silicon thin films grown by direct chemical vapor deposition on oxidized silicon substrates. More specifically, we analyze the influence of the doping type on the properties of this model polycrystalline silicon material. This includes an investigation of defect passivation and benchmarking of minority carrier properties. In our investigation, we use a variety of characterization techniques to probe the properties of the investigated polycrystalline silicon thin films, including Fourier Transform Photoelectron Spectroscopy, Electron Spin Resonance, Conductivity Activation, and Suns-Voc measurements. Amphoteric silicon dangling bond defects are identified as the most prominent defect type present in these layers. They are the primary recombination center in the relatively lowly doped polysilicon thin films at the heart of the current investigation. In contrast with the case of solar cells based on Czochralski silicon or multicrystalline silicon wafers, we conclude that no benefit is found to be associated with the use of n-type dopants over p-type dopants in the active absorber of the investigated polycrystalline silicon thin-film solar cells. - Highlights: • Comparison of n- and p-type absorbers for thin-film poly-Si solar cells • Extensive characterization of the investigated layers' characteristics • Literature review pertaining the use of n-type and p-type dopants in silicon.

  11. Effects of Different Parameters In Enhancing The Efficiency of Plasmonic Thin Film Solar Cells

    N.Alekhya Reddy

    2014-09-01

    Full Text Available Efficiency of thin film solar cells are less comparing to thick film solar cells which can be enhanced by utilizing the metal nanoparticles near their localized Plasmon resonance. In this paper, we have reviewed the Plasmon resonance of metallic nanoparticles and its application in solar cell technology. Beside this, we have also reviewed about different parameters which dominate the nanoparticles to increase optical absorption. Thus a cost-effective model has been proposed.

  12. The impact of sodium contamination in tin sulfide thin-film solar cells

    Vera Steinmann

    2016-02-01

    Full Text Available Through empirical observations, sodium (Na has been identified as a benign contaminant in some thin-film solar cells. Here, we intentionally contaminate thermally evaporated tin sulfide (SnS thin-films with sodium and measure the SnS absorber properties and solar cell characteristics. The carrier concentration increases from 2 × 1016 cm−3 to 4.3 × 1017 cm−3 in Na-doped SnS thin-films, when using a 13 nm NaCl seed layer, which is detrimental for SnS photovoltaic applications but could make Na-doped SnS an attractive candidate in thermoelectrics. The observed trend in carrier concentration is in good agreement with density functional theory calculations, which predict an acceptor-type NaSn defect with low formation energy.

  13. Properties of ITO-AZO bilayer thin films prepared by magnetron sputtering for applications in thin-film silicon solar cells

    In this paper we study the electro-optical behavior and the application of indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) bilayer thin films for silicon solar cells. ITO-AZO bilayer thin films were deposited on glass substrates using radio-frequency magnetron sputtering. The experimental results show that a decrease in the electrical resistivity of the ITO-AZO bilayer thin films has been achieved without significant degradation of optical properties. In the best case the resistivity of the bilayer films reached a minimum of 5.075 x 10-4 Ω cm when the thickness of the AZO buffer layer was 12 nm. The ITO-AZO bilayer films were applied as the front electrodes of amorphous silicon solar cells and the short-circuit current density of the solar cells was considerably increased. (orig.)

  14. Characterization of Thin Films for Polymer Solar Cells

    Tromholt, Thomas

    The field of polymer solar cells has undergone an extensive development in recent years after the invention of semiconducting polymers in 1991. Efficiencies have gradually increased to above 10 %, and high throughput processing methods such as roll-to-roll coating allow for production of thousands...... of solar cells with low embedded time, material, and energy consumption as compared to silicon solar cells. Consequently, different demonstration products of small mobile gadgets based on polymer solar cells have been produced, which are fully competitive with conventional energy technologies......, illustrating the maturity of the technology. However, a limiting factor in terms of full commercialization is the stability of polymer solar cells. While is has been estimated that 10 years lifetime is needed, existing technologies only provide stabilities up to 1 year. Degradation of polymer solar cell is a...

  15. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    Zong-Liang Tseng; Chien-Hung Chiang; Chun-Guey Wu

    2015-01-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance o...

  16. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    Kim, Donguk [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Park, Young [High-Speed Railroad Infrastructure System Research Team, Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of); Kim, Minha [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Choi, Youngkwan [Water Facility Research Center, K-water, 125, 1689 Beon-gil, Yuseong-daero, Yuseong-gu, Daejeon 305-730 (Korea, Republic of); Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

  17. Disorder improves nanophotonic light trapping in thin-film solar cells

    Paetzold, U. W., E-mail: u.paetzold@fz-juelich.de; Smeets, M.; Meier, M.; Bittkau, K.; Merdzhanova, T.; Smirnov, V.; Carius, R.; Rau, U. [IEK5—Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Michaelis, D.; Waechter, C. [Fraunhofer Institut für Angewandte Optik und Feinmechanik, Albert Einstein Str. 7, D-07745 Jena (Germany)

    2014-03-31

    We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500 nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500 nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

  18. Polyol-mediated Synthesis of Chalcogenide Nanoparticles for Thin-film Solar Cells

    Dong, Hailong

    2014-01-01

    The aim of this work was polyol-mediated syntheses of chalcogenide nanoparticles for printable thin-film solar cells. In this thesis, chalcogenide nanoparticles, such as Cu2Se, In2Se3, CZTS, Se@CuSe and Te@Bi2Te3, have been successfully synthesized via a polyol-mediated method.

  19. Low cost and high performance light trapping structure for thin-film solar cells

    Wang, DongLin; Su, Gang

    2015-01-01

    Nano-scaled dielectric and metallic structures are popular light tapping structures in thin-film solar cells. However, a large parasitic absorption in those structures is unavoidable. Most schemes based on such structures also involve the textured active layers that may bring undesirable degradation of the material quality. Here we propose a novel and cheap light trapping structure based on the prism structured SiO2 for thin-film solar cells, and a flat active layer is introduced purposefully. Such a light trapping structure is imposed by the geometrical shape optimization to gain the best optical benefit. By examining our scheme, it is disclosed that the conversion efficiency of the flat a-Si:H thin-film solar cell can be promoted to exceed the currently certified highest value. As the cost of SiO2-based light trapping structure is much cheaper and easier to fabricate than other materials, this proposal would have essential impact and wide applications in thin-film solar cells.

  20. Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

    Deelen, J. van; Barink, M.; Klerk, L.; Voorthuijzen, P.; Hovestad, A.

    2015-01-01

    Modeling indicates a potential efficiency boost of 17% if thin-film solar panels are featured with a metallic grid. Variations of transparent conductive oxide sheet resistance, cell length, and grid dimensions are discussed. These parameters were optimized simultaneously to obtain the best result. M

  1. Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells

    Söderström, T; Haug, F.-J.; Niquille, X.; Terrazzoni, V; Ballif, C.

    2009-01-01

    The micromorph solar cell (stack of amorphous and microcrystalline cells) concept is the key for achieving high efficiency stabilized thin film silicon solar cells. We introduce a device structure that allows a better control of the light in-coupling into the two subcell components. It is based on an asymmetric intermediate reflector, which increases the effective thickness of the a-Si:H by a factor of more than three. Hence, the a- Si:H thickness reduction dimi...

  2. Characterization of thin film ZnCdS/CdTe solar cells

    Hussain, O.M.; Reddy, P.S.; Naidu, B.S.; Uthanna, S.; Reddy, P.J. (Sri Venkateswara Univ., Tirupati (IN). Dept. of Physics)

    1991-11-01

    Thin films of II-VI compound semiconductors have attracted considerable interest in recent years due to their wide range of applications in the fabrication of cost effective solar cells. Among these, cadmium telluride is one of the most attractive candidates with a direct band gap of 1.5 eV which is optimum for solar energy conversion. Generally, n-CdS is used as window layer to p-CdTe to fabricate heterojunction solar cells because of its reasonable optical transparency and the ease of depositing low-resistivity films. n-ZnCdS/p-CdTe polycrystalline thin film solar cells were fabricated by laser evaporating CdTe onto sprayed ZnCdS films. The cells were characterized by studying current-voltage, capacitance-voltage and spectral response measurements. A maximum efficiency of 7.6% was observed for a cell area of 1 cm{sup 2}. (author).

  3. MIS and PN junction solar cells on thin-film polycrystalline silicon

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  4. Indium sulfide thin films as window layer in chemically deposited solar cells

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  5. Novel wide band gap materials for highly efficient thin film tandem solar cells

    Brian E. Hardin, Stephen T. Connor, Craig H. Peters

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a

  6. Optical Layers for Thin-film Silicon Solar Cells

    Cuony, Peter

    2011-01-01

    In this work we develop and analyze optical layers for use in Micromorph solar cells, a tandem configuration with an amorphous silicon top cell and a microcrystalline silicon bottom cell. The morphology of the front electrode has a decisive role in maximizing the efficiency of a solar cell. To reach a better understanding of the requirements for the front electrode surface, we present a wide range of morphologies that can be obtained with as-grown rou...

  7. Low resistivity molybdenum thin film towards the back contact of dye-sensitized solar cell

    Vuong Son; Tran Thi Ha; Luong T Thu Thuy; Nguyen Ngoc Ha; Nguyen Duc Chien; Mai Anh Tuan

    2015-12-01

    This paper reports the optimization of the molybdenum thin film electrode as the back contact of dye-sensitized solar cell (DSSC). The molybdenum thin film was grown on the glass substrate by direct current sputtering techniques of which the sputtering power was 150Wat 18 sccm flow rate of Ar. At such sputtering parameters, the Mo film can reach the lowest resistivity of 1.28E−6 cm at 400 nm thick. And the reflection of Mo membrane was 82%. This value is considered as a very good result for preparation of the back contact of DSSC.

  8. Application of rapid thermal processing on SiNx thin film to solar cells

    Youjie LI; Peiqing LUO; Zhibin ZHOU; Rongqiang CUI; Jianhua HUANG; Jingxiao WANG

    2008-01-01

    Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were dis-cussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1D simulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique.

  9. Performance of thin-film Cds/CdTe solar cells

    Hussain, O.M.; Reddy, P.J. (Sri Venkateswara Univ., Tirupati (India). Dept. of Physics)

    1991-07-15

    Cadmium telluride is a very promising material for producing efficient thin-film solar cells because is has a direct bandgap of 1.5 eV, which is optimum for solar energy conversion. Many researchers have employed close space vapour transport, screen printing, thermal evaporation and electrochemical deposition techniques for the fabrication of Cds/CdTe solar cells, and have obtained a conversion efficiency of about 10%. In this investigation polycrystalline thin-film Cds/CdTe solar cells were fabricated by employing a laser evaporation technique for the deposition of CdTe films. The cells were characterized by studying the current-voltage, capacitance-voltage and spectral response measurements. (Author).

  10. On the Scalar Scattering Theory for Thin-Film Solar Cells

    Jäger, K.

    2012-01-01

    Nano-textured interfaces between two media of different refractive indices scatter light. The angular distribution and the intensity of the scattered light are deter- mined by the geometry of the nano-textures and the difference of the refractive indices of the two media. Thin-film silicon solar cells (TFSSC), which convert sunlight directly into electricity, have nano-textured interfaces. These interfaces scatter the light incident on the solar cell. The scattering leads to a longer average ...

  11. Novel Thin Film Solar Cells: Film Formation/Properties and Device Physics

    Song, Tze-Bin

    2015-01-01

    Thin film solar cells have attracted considerable attentions due to their lightweight, low material consumption, ease of fabrication, and potentially high power-conversion efficiency. However, significant cost reductions as well as large-scale production are necessary to compete with the conventional utility power. To reduce cost, vacuum-free manufacture process for each solar cell component is needed. This dissertation focus on novel and cost-effective methods on solution processes of thin f...

  12. Failure analysis of thin-film amorphous-silicon solar-cell modules

    Kim, Q.

    1984-01-01

    A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

  13. Thermal Characteristics of Multilayer Insulation Materials for Flexible Thin-Film Solar Cell Array of Stratospheric Airship

    Kangwen Sun

    2014-01-01

    Full Text Available Flexible thin-film solar cell is an efficient energy system on the surface of stratospheric airship for utilizing the solar energy. In order to ensure the normal operation of airship platform, the thermal control problem between the flexible thin-film solar cell and the airship envelope should be properly resolved. In this paper, a multilayer insulation material (MLI is developed first, and low temperature environment test is carried out to verify the insulation effect of MLI. Then, a thermal heat transfer model of flexible thin-film solar cell and MLI is proposed, and the equivalent thermal conductivity coefficients of flexible thin-film solar cell and Nomex honeycomb are calculated based on the environment test and the temperature profile of flexible thin-film solar cell versus each layer of MLI. Finally, FLUENT is used for modeling and simulation analysis on the flexible thin-film solar cell and MLI, and the simulation results agree well with the experimental data, which validate the correctness of the proposed heat transfer model of MLI. In some way, our study can provide helpful support for further engineering applications of flexible thin-film solar cell.

  14. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure

  15. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  16. ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

    Peter Pikna

    2014-10-01

    Full Text Available Thin film polycrystalline silicon (poly-Si solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ. Tested temperature of the sample (55°C – 110°C was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

  17. Interfacial Properties of CZTS Thin Film Solar Cell

    N. Muhunthan; Om Pal Singh; Thakur, M. K.; P. Karthikeyan; Dinesh Singh; Saravanan, M; V. N. Singh

    2014-01-01

    Cu-deficient CZTS (copper zinc tin sulfide) thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron micro...

  18. Selective Ablation of Thin Films with Picosecond-Pulsed Lasers for Solar Cells

    Račiukaitis, G.; Gečys, P.; Gedvilas, M.; Regelskis, K.; Voisiat, B.

    2010-10-01

    Functional thin-films are of high importance in modern electronics for flat panel displays, photovoltaics, flexible and organic electronics. Versatile technologies are required for patterning thin-film materials on rigid and flexible substrates. The large-area applications of thin films such as photovoltaics need high speed and simple to use techniques. Ultra-short laser processing with its flexibility is one of the ways to achieve high quality material etching but optimization of the processes is required to meet specific needs of the applications. Lasers with picosecond pulse duration were applied in selective ablation of conducting, semi-conducting and isolating films in the complex multilayered thin-film solar cells based on amorphous Si and CuInxGa(1-x)Se2 (CIGS) deposited on glass and polymer substrates. Modeling of energy transition between the layers and temperature evolution was performed to understand the processes. Selection of the right laser wavelength was important to keep the energy coupling in a well defined volume at the interlayer interface. Ultra-short pulses ensured high energy input rate into absorbing material permitting peeling of the layers with no influence on the remaining material. Use of high repetition rate lasers with picosecond pulse duration offers new possibilities for high quality and efficiency patterning of advanced materials for thin-film electronics.

  19. Thin film solar cell inflatable ultraviolet rigidizable deployment hinge

    Simburger, Edward J. (Inventor); Matsumoto, James H. (Inventor); Giants, Thomas W. (Inventor); Garcia, III, Alec (Inventor); Perry, Alan R. (Inventor); Rawal, Suraj (Inventor); Marshall, Craig H. (Inventor); Lin, John K. H. (Inventor); Day, Jonathan Robert (Inventor); Kerslake, Thomas W. (Inventor)

    2010-01-01

    A flexible inflatable hinge includes curable resin for rigidly positioning panels of solar cells about the hinge in which wrap around contacts and flex circuits are disposed for routing power from the solar cells to the power bus further used for grounding the hinge. An indium tin oxide and magnesium fluoride coating is used to prevent static discharge while being transparent to ultraviolet light that cures the embedded resin after deployment for rigidizing the inflatable hinge.

  20. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    Chu, T.L. (University of South Florida, Tampa, FL (United States))

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  1. High-efficiency thin-film solar cells for the conversion of concentrated radiation

    Andreev, V. M.; Burba, T. S.; Dorgan, V. V.; Trofim, V. G.; Chumak, V. A.

    1987-09-01

    The objective of the study was to investigate the possibility of increasing the efficiency of thin-film solar cells with coplanar back contacts for the conversion of concentrated solar radiation. It is shown that, in the thin-film solar cells described here, the cell shading factor can be reduced to a minimum since it does not depend on the p-contact area but is determined solely by the area of etched grooves in a thin (7 microns) layer of GaAs. The cells used in the study have a shading factor of 2.5 percent, and a further reduction by an order of magnitude is shown to be possible.

  2. High-efficiency thin-film solar cells for the conversion of concentrated radiation

    Andreev, V.M.; Burba, T.S.; Dorgan, V.V.; Trofim, V.G.; Chumak, V.A.

    1987-09-01

    The objective of the study was to investigate the possibility of increasing the efficiency of thin-film solar cells with coplanar back contacts for the conversion of concentrated solar radiation. It is shown that, in the thin-film solar cells described here, the cell shading factor can be reduced to a minimum since it does not depend on the p-contact area but is determined solely by the area of etched grooves in a thin (7 microns) layer of GaAs. The cells used in the study have a shading factor of 2.5 percent, and a further reduction by an order of magnitude is shown to be possible. 6 references.

  3. Recent advances in the transparent conducting ZnO for thin-film Si solar cells

    Moon, Taeho; Shin, Gwang Su; Park, Byungwoo

    2015-11-01

    The key challenge for solar-cell development lies in the improvement of power-conversion efficiency and the reduction of fabrication cost. For thin-film Si solar cells, researches have been especially focused on the light trapping for the breakthrough in the saturated efficiencies. The ZnO-based transparent conducting oxides (TCOs) have therefore received strong attention because of their excellent light-scattering capability by the texture-etched surface and cost effectiveness through in-house fabrication. Here, we have highlighted our recent studies on the transparent conducting ZnO for thin-film Si solar cells. From the electrical properties and their degradation mechanisms, bilayer deposition and organic-acid texturing approaches for enhancing the light trapping, and finally the relation between textured ZnO and electrical cell performances are sequentially introduced in this review article. [Figure not available: see fulltext.

  4. Photon management in thin-film solar cells; Photon-Management in Duennschicht-Solarzellen

    Fahr, Stephan

    2011-11-22

    In this thesis procedures were presented, which modify the propagation of the incident light in such a way that by this the efficiency of thin-film solar cells is increased. The strength of the presented numerical studies lies thereby in the rigorous solution of Maxwell's equations. Fundamental statements concerning the lay-out of an ideal texture could be made, which for present thin-film solar cells over the whole relevant spectral range both suppresses reflection losses and leads to an elongation of the effective path. Object of the thesis was also the design of a spectral- and angular-selective filter, which confines the acceptance angle of a solar cell with the aim of an improved absorption in the long-wave spectral region. Furthermore also tandem cells on the base of amorphous and microcrystalline silicon were studied.

  5. Modeling and analysis of CuGaS2 thin-film solar cell

    Singh, Pravesh; Gautam, Ruchita; Verma, Ajay Singh; Kumari, Sarita

    2016-05-01

    The authors have performed, the modeling of thin film CuGaS2 based solar cell with ZnTe buffer layer. The efficiency of the cell, short circuit current density and fill factor are calculated. In addition the effect of thickness of absorption layer over performance parameters of the cell is studied and it is found that maximum efficiency of the cell is achieved for 2000 nm thick absorption layer.

  6. Advanced electrical simulation of thin film solar cells

    Advanced electrical simulation of copper indium gallium diselenide solar cells is illustrated by setting up a demonstration case in SCAPS (Solar Cell Capacitance Simulator), the solar cell simulation programme of the University of Gent. The model includes band gap grading, multivalent defects and metastable transitions between defects. This simplified demonstration model clearly and quantitatively illustrates some topics that were extensively discussed in recent literature: metastable defects exist in either an acceptor or in a donor configuration; the occupation of these configurations is set during initial conditions at higher temperature, and then frozen in during cell operation at lower temperature. These occupations can strongly influence the effective doping profile in the absorber, and hence possible energy barriers in the structure. The dependence of such barriers on the initial conditions and on the operating voltage can cause a considerable dependence of the current–voltage characteristics on the initial conditions, especially of the fill factor. At the same time, the demonstration model illustrates some of the recent extensions of SCAPS. - Highlights: ► SCAPS, the Solar Cell Capacitance Simulator of UGent is freely available. ► SCAPS is keeping up with the sophistication of state-of-the-art solar cells. ► It can now handle: multivalent and metastable defects; grading of all properties. ► It is shown how metastable defects can lead to metastable cell characteristics. ► A relation conduction band barrier-fill factor is numerically established

  7. Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys

    Lucia V. Mercaldo; Iurie Usatii; Paola Delli Veneri

    2016-01-01

    The conversion efficiency of thin-film silicon solar cells needs to be improved to be competitive with respect to other technologies. For a more efficient use of light across the solar spectrum, multi-junction architectures are being considered. Light-management considerations are also crucial in order to maximize light absorption in the active regions with a minimum of parasitic optical losses in the supportive layers. Intrinsic and doped silicon oxide alloys can be advantageously applied wi...

  8. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  9. Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

    2010-01-01

    CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.

  10. Development of a high voltage top cell for silicon thin-film solar cells

    Walder , Cordula

    2015-01-01

    he development of multijunction solar cells is a promising approach to increase the efficiency of silicon thin-film photovoltaics. The objective of this work is to investigate how to optimise a high bandgap top cell and if the use of hydrogenated amorphous silicon alloys (a-SiO:H, a-SiC:H) as absorber materials is reasonable. According to the simulation results of this work, hydrogenated amorphous silicon (a-Si:H) is the preferable top cell absorber material for a triple cell. However, for a ...

  11. Advanced characterization techniques for thin film solar cells

    Rau, Uwe; Kirchartz, Thomas

    2011-01-01

    Written by scientists from leading institutes in Germany, USA and Spain who use these techniques as the core of their scientific work and who have a precise idea of what is relevant for photovoltaic devices, this text contains concise and comprehensive lecture-like chapters on specific research methods.They focus on emerging, specialized techniques that are new to the field of photovoltaics yet have a proven relevance. However, since new methods need to be judged according to their implications for photovoltaic devices, a clear introductory chapter describes the basic physics of thin-film

  12. Plasmonic Light Trapping in Thin-Film Solar Cells: Impact of Modeling on Performance Prediction

    Alberto Micco

    2015-06-01

    Full Text Available We present a comparative study on numerical models used to predict the absorption enhancement in thin-film solar cells due to the presence of structured back-reflectors exciting, at specific wavelengths, hybrid plasmonic-photonic resonances. To evaluate the effectiveness of the analyzed models, they have been applied in a case study: starting from a U-shaped textured glass thin-film, µc-Si:H solar cells have been successfully fabricated. The fabricated cells, with different intrinsic layer thicknesses, have been morphologically, optically and electrically characterized. The experimental results have been successively compared with the numerical predictions. We have found that, in contrast to basic models based on the underlying schematics of the cell, numerical models taking into account the real morphology of the fabricated device, are able to effectively predict the cells performances in terms of both optical absorption and short-circuit current values.

  13. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Hongxia Wang

    2011-01-01

    Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

  14. Processing and modeling issues for thin-film solar cell devices. Final report

    Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

    1997-11-01

    During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

  15. Thermal Characteristics of Multilayer Insulation Materials for Flexible Thin-Film Solar Cell Array of Stratospheric Airship

    Kangwen Sun; Qinzhen Yang; Yang Yang; Shun Wang; Jianming Xu; Qiang Liu; Yong Xie; Peng Lou

    2014-01-01

    Flexible thin-film solar cell is an efficient energy system on the surface of stratospheric airship for utilizing the solar energy. In order to ensure the normal operation of airship platform, the thermal control problem between the flexible thin-film solar cell and the airship envelope should be properly resolved. In this paper, a multilayer insulation material (MLI) is developed first, and low temperature environment test is carried out to verify the insulation effect of MLI. Then, a therma...

  16. Development of a Thin Film Solar Cell Interconnect for the Powersphere Concept

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen

    2003-01-01

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the Powersphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference.

  17. Development of a thin film solar cell interconnect for the PowerSphere concept

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the PowerSphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference

  18. Nanoimprint Lithography for High-Efficiency Thin-Film Silicon Solar Cells

    Battaglia, Corsin; Escarré, Jordi; SöDerströM, Karin; Erni, Lukas; Ding, Laura; Bugnon, Grégory; Billet, Adrian; Boccard, Mathieu; Barraud, Loris; De Wolf, Stefaan; Haug, Franz-Josef; Despeisse, Matthieu; Ballif, Christophe

    2011-01-01

    We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tandem junction cells. Excellent light incoupling results in a remarkable summed short-circuit current d...

  19. Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-GD technique

    Meier, Johannes; Vallat-Sauvain, Evelyne; Dubail, S.; Kroll, U.; Dubail, J.; Golay, S.; Feitknecht, Luc; Torres, Pedro; Faÿ, Sylvie; Fischer, D.; Shah, Arvind

    2008-01-01

    Hydrogenated microcrystalline silicon prepared at low temperatures by the glow discharge technique is examined here with respect to its role as a new thin-film photovoltaic absorber material. XRD and TEM characterisations reveal that microcrystalline silicon is a semiconductor with a very complex morphology. Microcrystalline p–i–n cells with open-circuit voltages of up to 560–580 mV could be prepared. “Micromorph” tandem solar cells show under outdoor conditions higher short-circuit currents ...

  20. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    Walder Cordula; Kellermann Martin; Wendler Elke; Rensberg Jura; von Maydell Karsten; Agert Carsten

    2015-01-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or ...

  1. Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells.

    Dai, Pengcheng; Zhang, Guan; Chen, Yuncheng; Jiang, Hechun; Feng, Zhenyu; Lin, Zhaojun; Zhan, Jinhua

    2012-03-21

    Porous copper zinc tin sulfide (CZTS) thin film was prepared via a solvothermal approach. Compared with conventional dye-sensitized solar cells (DSSCs), double junction photoelectrochemical cells using dye-sensitized n-type TiO(2) (DS-TiO(2)) as the photoanode and porous p-type CZTS film as the photocathode shows an increased short circuit current, external quantum efficiency and power conversion efficiency. PMID:22322239

  2. Thin-Film Solar Cells on Metal Foil Substrates for Space Power

    Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

    2004-01-01

    Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved

  3. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

    2016-02-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  4. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    Wang Lan

    2016-01-01

    Full Text Available We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  5. Schottky solar cells based on CsSnI3 thin-films

    Chen, Zhuo; Wang, Jian J.; Ren, Yuhang; Yu, Chonglong; Shum, Kai

    2012-08-01

    We describe a Schottky solar cell based on the perovskite semiconductor CsSnI3 thin-film. The cell consists of a simple layer structure of indium-tin-oxide/CsSnI3/Au/Ti on glass substrate. The measured power conversion efficiency is 0.9%, which is limited by the series and shunt resistance. The influence of light intensity on open-circuit voltage and short-circuit current supports the Schottky solar cell model. Additionally, the spectrally resolved short-circuit current was measured, confirming the unintentionally doped CsSnI3 is of p-type characteristics. The CsSnI3 thin-film was synthesized by alternately depositing layers of SnCl2 and CsI on glass substrate followed by a thermal annealing process.

  6. Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

    Keya Zhou

    2015-07-01

    Full Text Available Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si and amorphous silicon (a-Si thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells.

  7. Radiation resistance of thin-film solar cells for space photovoltaic power

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  8. PEDOT:PSS emitters on multicrystalline silicon thin-film absorbers for hybrid solar cells

    Junghanns, Marcus; Plentz, Jonathan; Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Falk, Fritz

    2015-02-01

    We fabricated an efficient hybrid solar cell by spin coating poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) on planar multicrystalline Si (mc-Si) thin films. The only 5 μm thin Si absorber layers were prepared by diode laser crystallization of amorphous Si deposited by electron beam evaporation on glass. On these absorber layers, we studied the effect of SiOx and Al2O3 terminated Si surfaces. The short circuit density and power conversion efficiency (PCE) of the mc-Si/Al2O3/PEDOT:PSS solar cell increase from 20.6 to 25.4 mA/cm2 and from 7.3% to 10.3%, respectively, as compared to the mc-Si/SiOx/PEDOT:PSS cell. Al2O3 lowers the interface recombination and improves the adhesion of the polymer film on the hydrophobic mc-Si thin film. Open circuit voltages up to 604 mV were reached. This study demonstrates the highest PCE so far of a hybrid solar cell with a planar thin film Si absorber.

  9. Multi-Material Front Contact for 19% Thin Film Solar Cells

    Joop van Deelen; Yasemin Tezsevin; Marco Barink

    2016-01-01

    The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se2 (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency...

  10. Optimization of amorphous silicon thin film solar cells for flexible photovoltaics

    Söderström, T; Haug, F. -J.; Terrazzoni-Daudrix, V.; Ballif, C.

    2008-01-01

    We investigate amorphous silicon (a-Si:H) thin film solar cells in the n-i-p or substrate configuration that allows the use of nontransparent and flexible substrates such as metal or plastic foils such as polyethylene- naphtalate (PEN). A substrate texture is used to scatter the light at each interface, which increases the light trapping in the active layer. In the first part, we investigate the relationship between the substrate morphology and the short circui...

  11. Light trapping in thin-film solar cells measured by Raman spectroscopy

    Ledinský, Martin; Moulin, E.; Bugnon, G.; Ganzerová, Kristína; Vetushka, Aliaksi; Meillaud, F.; Fejfar, Antonín; Ballif, C.

    2014-01-01

    Roč. 105, č. 11 (2014), "111106-1"-"111106-4". ISSN 0003-6951 R&D Projects: GA ČR GA14-15357S; GA MŠk(CZ) LM2011026; GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - FAST TRACK Institutional support: RVO:68378271 Keywords : light trapping * microcrystalline silicon * thin film solar cell * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.302, year: 2014

  12. Bimodal nanostructured TiO2 thin films for dye sensitized solar cells

    Zukalová, Markéta; Kavan, Ladislav; Zukal, Arnošt; Graetzel, M.

    Málaga: BrownWalker Press, 2012. s. 99-99. ISBN 978-1-61233-558-2. [EMR 2012 : The Energy and Materials Research Conference. 20.06.2012-22.06.2012, Torremolinos] R&D Projects: GA ČR(CZ) GAP108/12/0814 Institutional support: RVO:61388955 Keywords : TiO2 * thin films * dye-sensitized solar cell Subject RIV: CG - Electrochemistry

  13. Peel-and-Stick: Fabricating Thin Film Solar Cell on Universal Substrates

    Chi Hwan Lee; Dong Rip Kim; In Sun Cho; Nemeth William; Qi Wang; Xiaolin Zheng

    2012-01-01

    Fabrication of thin-film solar cells (TFSCs) on substrates other than Si and glass has been challenging because these nonconventional substrates are not suitable for the current TFSC fabrication processes due to poor surface flatness and low tolerance to high temperature and chemical processing. Here, we report a new peel-and-stick process that circumvents these fabrication challenges by peeling off the fully fabricated TFSCs from the original Si wafer and attaching TFSCs to virtually any sub...

  14. Microscopic characterizations of nanostructured silicon thin films for solar cells

    Fejfar, Antonín; Klapetek, P.; Zlámal, J.; Vetushka, Aliaksi; Ledinský, Martin; Kočka, Jan

    Warrendale: MRS , 2011 - (Yan, B.; Higashi, S.; Tsai, C.; Wang, Q.; Gleskova, H.), s. 313-321. ( MRS Symposium Proceeding. 1321). ISBN 9781605112985. [Materials Research Society Spring Meeting. San Francisko (US), 25.04.2011-29.04.2011] R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 Grant ostatní: 7. Framework programme EU(XE) no. 240826 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon * scanning probe methods * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism

  15. Positron annihilation study on CuInSe2 solar cell thin films

    Positron annihilation spectroscopy has been used to investigate CuInSe2 solar cell thin films. The films were grown on Mo-coated soda lime glass substrates by the electrochemical deposition processing technique. As-grown samples are found to contain large concentration of vacancy defects. The selenium (Se) atmosphere and sulfur (S) atmosphere annealing of as-grown samples at 800 K can dramatically reduce the number of vacancy defects and the film becomes crystalline. In addition, a defect layer of about 50 nm thickness was observed at the surface of the CuInSe2 thin film. This layer results from the electrochemical deposition method, but the defect concentration in the defect layer can be greatly reduced by annealing in selenium atmosphere. The Doppler broadening line shape parameter correlation plot provided evidence that the positron trapping defect states where in three samples. - Highlights: ► As-grown CuInSe2 thin films contain large concentration of defects. ► A defect layer of about 50 nm exists in the CuInSe2 thin film surface. ► The defect concentration in the defect layer can be greatly reduced.

  16. Positron annihilation study on CuInSe{sub 2} solar cell thin films

    Zhang, Lijuan [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Wang, Tao [Institute of Fluid Physics, CAEP, P.O. Box 919-106, Mianyang 621900 (China); Li, Ji [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Hao, Yingping; Liu, Jiandang [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Zhang, Peng [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, No. 19 Yuquan Lu, Beijing 100049 (China); Cheng, Bin [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Zhang, Zhongwei [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Wang, Baoyi [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, No. 19 Yuquan Lu, Beijing 100049 (China); Ye, Bangjiao, E-mail: bjye@ustc.edu.cn [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China)

    2012-12-15

    Positron annihilation spectroscopy has been used to investigate CuInSe{sub 2} solar cell thin films. The films were grown on Mo-coated soda lime glass substrates by the electrochemical deposition processing technique. As-grown samples are found to contain large concentration of vacancy defects. The selenium (Se) atmosphere and sulfur (S) atmosphere annealing of as-grown samples at 800 K can dramatically reduce the number of vacancy defects and the film becomes crystalline. In addition, a defect layer of about 50 nm thickness was observed at the surface of the CuInSe{sub 2} thin film. This layer results from the electrochemical deposition method, but the defect concentration in the defect layer can be greatly reduced by annealing in selenium atmosphere. The Doppler broadening line shape parameter correlation plot provided evidence that the positron trapping defect states where in three samples. - Highlights: Black-Right-Pointing-Pointer As-grown CuInSe{sub 2} thin films contain large concentration of defects. Black-Right-Pointing-Pointer A defect layer of about 50 nm exists in the CuInSe{sub 2} thin film surface. Black-Right-Pointing-Pointer The defect concentration in the defect layer can be greatly reduced.

  17. Electrical conductivity of chlorophyll with poly thiophene thin film as a bulk heterojunction solar cell

    Full text: In this work, electrical conductivity of the combinations mixture with different ratio of Poly thiophene (PT) and Chlorophyll (CHLO) thin film as a bulk heterojunction solar cell was studied. Spin coating technique was used to deposit the combination of PT and CHLO thin film on the Aurum (Au) layer which acts as a substrate. The optical characterization of thin film was measured using UV-Visible Spectrophotometer and four point probes were used to determine the film electrical properties in the dark and under the light. From the optical absorption study, the combination mixture between PT and CHLO altered the energy band gap of the thin film. The increasing of the mixture ratio of both solutions decreased the electrical conductivity in the dark and also under light. Under the light, the electrical conductivity of combine mixture shows the increasing with the increased of light intensity. The lowest mixture ratio shows the highest electrical conductivity ± 1.389 S/m under dark and increased with the increasing of the light intensity. (author)

  18. Low temperature p+ nc-Si:H window layers for large area thin-film solar cells

    Tse, Wing Fai Lydia

    2007-01-01

    Hydrogenated nanocrystalline silicon (nc-Si:H) has attracted attention recently over amorphous silicon (a-Si:H) for use in thin-film solar cell applications primarily due to its higher stability and light absorbing capacity. In addition, there is increasing interest in device fabrication on low-cost, light weight and flexible substrates where optimizing deposition conditions of nc-Si:H thin films at low substrate temperatures (< 200 °C) poses challenges. In such solar cells, the thin boron...

  19. First principles study of Bi dopen CdTe thin film solar cells: electronic and optical properties

    Seminóvski Pérez, Yohanna; Palacios Clemente, Pablo; Wahnón Benarroch, Perla

    2011-01-01

    Nowadays, efficiency improvement of solar cells is one of the most important issues in photovoltaic systems and CdTe is one of the most promising thin film photovoltaic materials we can found. CdTe reported efficiencies in solar energy conversion have been as good as that found in polycrystalline Si thin film cell [1], besides CdTe can be easily produced at industrial scale.

  20. Full potential of radial junction Si thin film solar cells with advanced junction materials and design

    Qian, Shengyi; Misra, Soumyadeep; Lu, Jiawen; Yu, Zhongwei; Yu, Linwei; Xu, Jun; Wang, Junzhuan; Xu, Ling; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-07-01

    Combining advanced materials and junction design in nanowire-based thin film solar cells requires a different thinking of the optimization strategy, which is critical to fulfill the potential of nano-structured photovoltaics. Based on a comprehensive knowledge of the junction materials involved in the multilayer stack, we demonstrate here, in both experimental and theoretical manners, the potential of hydrogenated amorphous Si (a-Si:H) thin film solar cells in a radial junction (RJ) configuration. Resting upon a solid experimental basis, we also assess a more advanced tandem RJ structure with radially stacking a-Si:H/nanocrystalline Si (nc-Si:H) PIN junctions, and show that a balanced photo-current generation with a short circuit current density of Jsc = 14.2 mA/cm2 can be achieved in a tandem RJ cell, while reducing the expensive nc-Si:H absorber thickness from 1-3 μ m (in planar tandem cells) to only 120 nm. These results provide a clearly charted route towards a high performance Si thin film photovoltaics.

  1. Geometric photovoltaics applied to amorphous silicon thin film solar cells

    Kirkpatrick, Timothy

    Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are revealed. Physical effects such as carrier generation and recombination are compared for each cell architecture, providing insight as to how non-planar junctions may potentially enable greater energy conversion efficiencies. Numerical simulations are performed for arrays of vertically aligned, nanostructured coaxial and hemispherical amorphous silicon solar cells and results are compared to those from simulations performed for the standard planar junction. Results indicate that fundamental physical changes in the spatial dependence of the energy band profile across the intrinsic region of an amorphous silicon p-i-n junction manifest as an increase in recombination current for non-planar photovoltaic architectures. Despite an increase in recombination current, however, the coaxial architecture still appears to be able to surpass the efficiency predicted for the planar geometry, due to the geometry of the junction leading to a decoupling of optics and electronics.

  2. Thin-film silicon solar cells. A review and selected trends

    A case is developed for considering silicon as the prime medium-term candidate for semiconductor photovoltaic cells; the argumentation is based on other materials not being abundantly available, highly toxic and/or very expensive. Crystalline silicon solar cells have excellent efficiencies, however, according to data presented by the authors on material fluxes and energy consumption there are serious bottlenecks for this technique with respect to future large-scale applications both from an economical as well as from an ecological point of view. Thus, the authors consider thin-film silicon solar cells as the main option for large-scale energy applications in the foreseeable future. Thin-film silicon solar cells are either polycrystalline or amorphous. The first category is gaining in interest at this moment, but major technological problems remain unresolved, e.g., growth of a high-quality crystalline structure on foreign (low-cost) substrates, reduction of deposition temperature and increase of deposition rate. The second category has so far yielded only limited stable efficiencies, although progress has been recently achieved in improving the stability of solar cells using stacked or tandem/triple structures. Novel approaches to further improve the stable efficiencies, such as using low-level doping profiles within the i-layer of the p-i-n solar cell, are listed. Entirely microcrystalline p-i-n solar cells that are stable and can be deposited at low temperatures (220C) with rates up to 1 A/s by the VHF plasma deposition technique are described as further, recent contribution to thin-film silicon photovoltaic technology

  3. 3D photonic crystal intermediate reflector for micromorph thin-film tandem solar cell

    Uepping, Johannes; Miclea, Paul T.; Wehrspohn, Ralf B. [Institute of Physics, Martin-Luther-University of Halle-Wittenberg, Heinrich-Damerow-Str. 4, 06120 Halle (Germany); Rockstuhl, Carsten; Lederer, Falk [Institute of Condensed Matter Theory and Solid States Optics, Friedrich Schiller University Jena, 07743 Jena (Germany); Peters, Marius [Freiburg Centre for Material Research, University of Freiburg, 79104 Freiburg (Germany); Steidl, Lorenz; Zentel, Rudolf [Dept. of Chemistry, Pharmacy and Earth Science, Johannes Gutenberg University of Mainz, Duesbergweg 10-14 (Germany); Lee, Seung-Mo; Knez, Mato [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Lambertz, Andreas; Carius, Reinhard [Institute of Energy Research, IEF-5 Photovoltaics, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Bielawny, Andreas

    2008-12-15

    The concept of 3D photonic intermediate reflectors for micromorph silicon tandem solar cells has been investigated. In thin-film silicon tandem solar cells consisting of amorphous and microcrystalline silicon with two junctions of a-Si/{mu}c-Si, efficiency enhancements can be achieved by increasing the current density in the a-Si top cell. It is one goal to provide an optimized current matching at high current densities. For an ideal photon-management between top and bottom cell, a spectrally selective intermediate reflective layer (IRL) is necessary, which is less dependent of the angle of incidence than state-of-the-art thickness dependent massive interlayers. The design, preparation and characterization of a 3D photonic thin-film filter device for this purpose has been pursued straight forward in simulation and experimental realization. The inverted opal is capable of providing a suitable optical band stop with high reflectance and the necessary long wavelength transmittance as well and provides further options for improved light trapping. We have determined numerically the relative efficiency enhancement of an a-Si/{mu}c-Si tandem solar cell using a conductive 3D-photonic crystal. We have further fabricated such structures by ZnO-replication of polymeric opals using chemical vapour deposition and atomic layer deposition techniques and present the results of their characterization. Thin film photonic IRL have been prepared at the rear side of a-Si solar cells. Completed with a back contact, this is the first step to integrate this novel technology into an a-Si/{mu}c-Si tandem solar cell process. The spectral response of the cell is presented and compared with reference cells. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Cross-sectional electrostatic force microscopy of thin-film solar cells

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-01

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II-VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO2/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface (±50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  5. Analysis of the p+/p window layer of thin film solar cells by simulation

    林爱国; 丁建宁; 袁宁一; 王书博; 程广贵; 卢超

    2012-01-01

    The application of a p+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-1D program.The differences between p+-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out.The effects of dopant concentration,thickness of p+-layer,contact barrier height and defect density on solar cells are analyzed.Our results indicate that solar cells with a p+-p-i-n configuration have a better performance.The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p+ layer and lowering the front contact barrier height.The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.

  6. Analysis of the p+/p window layer of thin film solar cells by simulation

    The application of a p+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-1D program. The differences between p+−p—i—n configuration solar cells and p—i—n configuration solar cells are pointed out. The effects of dopant concentration, thickness of p+-layer, contact barrier height and defect density on solar cells are analyzed. Our results indicate that solar cells with a p+−p—i—n configuration have a better performance. The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p+ layer and lowering the front contact barrier height. The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property. (semiconductor materials)

  7. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    Boccard Mathieu; Cuony Peter; Hänni Simon; Stuckelberger Michael; Haug Franz-Josef; Meillaud Fanny; Despeisse Matthieu; Ballif Christophe

    2014-01-01

    When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration) or superstrate (in p-i-n configuration). We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but ...

  8. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  9. Computational and experimental study of a multi-layer absorptivity enhanced thin film silicon solar cell

    We report on the computational design, fabrication and validation of a multi-layer silicon based thin film solar cell. The cell structure consists of a thin absorber layer of amorphous silicon deposited on a back-reflector aluminum layer and coated on top with ITO transparent conductive oxide. The structure is mounted on a glass substrate. We first use constrained optimization techniques along with numerical solvers of the electromagnetic equations (i.e. FDTD) to tune the geometry of the design. The resulting structure suggests that photon absorptivity in the thin film silicon can be enhanced by as much as 100% over the uncoated layer. The proposed design is then fabricated using thin film deposition techniques, along with a control sample of bare silicon absorber for comparison. AFM imaging and spectrophotometry experiments are applied to image and record the surface roughness and measure the reflectivity spectrum of the sample. Using the measured reflectivity spectrum, we then use inverse optimization to estimate the realized thin film dimensions, deposition error and unwanted oxidation volume. At the end, we use a statistical Monte Carlo analysis as a second method of verification to demonstrate that the measured spectra are in accordance with the expected curves from simulation, and to estimate the effects of fabrication error. - Highlights: • Design, fabrication and validation of multi-layer silicon solar cell are studied. • The cell consists of aluminum, amorphous silicon and ITO layers. • The proposed designs are fabricated by deposition techniques. • Inverse optimization is used to estimate the realized dimensions and errors

  10. Design principle for absorption enhancement with nanoparticles in thin-film silicon solar cells

    The use of nanoparticles in solar cells has created many controversies. In this paper, different mechanisms of nanoparticles with different materials with diameters varying from 50 to 200 nm, surface coverage at 5, 20, and 60 %, and different locations are analyzed systematically for efficient light trapping in a thin-film c-Si solar cell. Mie theory and the finite difference time domain method are used for analysis to give a design principle with nanoparticles for the solar cell application. Metals exhibit plasmonic resonances and angular scattering, while dielectrics show anti-reflection and scattering in the incident direction. A table is given to summarize the advantages and disadvantages in different conditions. The silicon absorption enhancement with nanoparticles on top is mainly in the shorter wavelengths below 700 nm, and both Al and SiO2 nanoparticles with diameter around 100 nm show the most significant enhancement. The silicon absorption enhancement with embedded nanoparticles takes place in the longer wavelengths over 700 nm, and Ag and SiO2 nanoparticles with larger diameter around 200 nm perform better. However, the light absorbed by Ag nanoparticles will be converted to heat and will lead to decrease in cell efficiency; hence, the choice of metallic nanoparticles in applications to solar cells should be carefully considered. The design principle proposed in this work gives a guideline by choosing reasonable parameters for the different requirements in the application of thin-film solar cells

  11. Identification of critical stacking faults in thin-film CdTe solar cells

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl2 is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies

  12. Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell

    赵占霞; 崔容强; 孟凡英; 于化丛; 周之斌

    2004-01-01

    This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.

  13. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 deg. C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu2-xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells

  14. Sustainability of photovoltaics. The case for thin-film solar cells

    To ensure photovoltaics become a major sustainable player in a competitive power-generation market, they must provide abundant, affordable electricity, with environmental impacts drastically lower than those from conventional power generation. The recent reduction in the cost of 2nd generation thin-film PV is remarkable, meeting the production milestone of $1 per watt in the fourth quarter of 2008. This achievement holds great promise for the future. However, the questions remaining are whether the expense of PV modules can be lowered further, and if there are resource- and environmental-impact constraints to growth. I examine the potential of thin-films in a prospective life-cycle analysis, focusing on direct costs, resource availability, and environmental impacts. These three aspects are closely related; developing thinner solar cells and recycling spent modules will become increasingly important in resolving cost, resource, and environmental constraints to large scales of sustainable growth. (author)

  15. Sinusoidal nanotextures for light management in silicon thin-film solar cells

    Köppel, G.; Rech, B.; Becker, C.

    2016-04-01

    Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

  16. n +-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells

    Lee, Ching-Ting; Lee, Hsin-Ying; Chen, Kuan-Hao

    2016-06-01

    In this study, the p-SiC/i-Si/n-Si cell and the p-SiC/i-SiGe/n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n +-microcrystalline-Si (n +-μc-Si) tunnel layer deposited using the laser-assisted plasma-enhanced chemical vapor deposition was inserted between the p-SiC/i-Si/n-Si cell and the p-SiC/i-SiGe/n-Si cell. Since both the plasma and the CO2 laser were simultaneously utilized to efficiently decompose the reactant and doping gases, the carrier concentration and the carrier mobility of the n +-μc-Si tunnel layer were significantly improved. The ohmic contact formed between the p-SiC layer and the n +-μc-Si tunnel layer with low resistance was beneficial to the generated current transportation and the carrier recombination rate. Therefore, the conversion efficiency of the tandem solar cells was promoted from 8.57% and 8.82% to 9.91% compared to that without tunnel layer and with 5-nm-thick n +-amorphous-Si tunnel layer.

  17. Five roads towards increased optical absorption and high stable efficiency for thin film silicon solar cells

    Vaněček, Milan; Poruba, Aleš; Remeš, Zdeněk; Holovský, Jakub; Purkrt, Adam; Babchenko, Oleg; Hruška, Karel; Meier, J.; Kroll, U.

    Munich: WIP- Renewable Energies, 2009 - (Sinke, W.; Ossenbrink, H.; Helm, P.), 2286-2289 ISBN 3-936338-25-6. [European Photovoltaic Solar Energy Conference /24./. Hamburg (DE), 21.09.2009-25.09.2009] R&D Projects: GA MŠk(CZ) 7E09057 EU Projects: European Commission(XE) 214134 - N2P; European Commission(XE) 19670 - ATHLET Institutional research plan: CEZ:AV0Z10100521 Keywords : thin film silicon solar cells * amorphous silicon * nanostructure * high stable efficiency Subject RIV: BM - Solid Matter Physics ; Magnetism

  18. Water vapour passivation of poly-Si thin film solar cells

    Pikna, Peter; Fejfar, Antonín; Píč, Vlastimil; Müller, Martin; Ledinský, Martin; Vetushka, Aliaksi; Kočka, Jan

    München: WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG, 2012 - (Nowak, S.), s. 2393-2395 ISBN 3-936338-28-0. [European Photovoltaic Solar Energy Conference and Exhibition (PVSEC) /17./. Frankfurt (DE), 24.09.2012-28.09.2012] R&D Projects: GA MŠk 7E10061; GA MPO FR-TI2/736; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 240826 - POLYSIMODE Institutional research plan: CEZ:AV0Z10100521 Keywords : polycrystalline * silicon * thin film solar cell * water vapour passivation * in situ investigation * Suns-Voc Subject RIV: BM - Solid Matter Physics ; Magnetism

  19. Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys

    Lucia V. Mercaldo

    2016-03-01

    Full Text Available The conversion efficiency of thin-film silicon solar cells needs to be improved to be competitive with respect to other technologies. For a more efficient use of light across the solar spectrum, multi-junction architectures are being considered. Light-management considerations are also crucial in order to maximize light absorption in the active regions with a minimum of parasitic optical losses in the supportive layers. Intrinsic and doped silicon oxide alloys can be advantageously applied within thin-film Si solar cells for these purposes. Intrinsic a-SiOx:H films have been fabricated and characterized as a promising wide gap absorber for application in triple-junction solar cells. Single-junction test devices with open circuit voltage up to 950 mV and ~1 V have been demonstrated, in case of rough and flat front electrodes, respectively. Doped silicon oxide alloys with mixed-phase structure have been developed, characterized by considerably lower absorption and refractive index with respect to standard Si-based films, accompanied by electrical conductivity above 10−5 S/cm. These layers have been successfully applied both into single-junction and micromorph tandem solar cells as superior doped layers with additional functionalities.

  20. Nanotextured thin film silicon solar cells:optical model

    Špringer, Jiří; Poruba, Aleš; Fejfar, Antonín; Vaněček, Milan; Feitknecht, L.; Wyrsch, N.; Meier, J.; Shah, A.

    London : James & James, 2000 - (Scheer, H.; McNelis, B.; Palz, W.; Ossenbrink, H.; Helm, P.), s. 434-437 ISBN 1-902916-18-2. [European Photovoltaic Solar Energy Conference /16./. Glasgow (GB), 01.05.2000-05.05.2000] Institutional research plan: CEZ:AV0Z1010914 Keywords : si-films * modeling * texturization Subject RIV: BM - Solid Matter Physics ; Magnetism

  1. Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

    Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

    2013-05-22

    Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film. PMID:23611655

  2. Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process

    We report about the current performance of crystalline silicon thin-film (cSiTF) solar cells that are a very attractive alternative to conventional wafer-based silicon solar cells if sufficiently high cell efficiencies are achieved at acceptable cost of production. Applying a standard cell process (diffused POCl3 emitter, front contacts by photolithography, no surface texture) to thin-films deposited with a lab-type reactor, specifically designed for high-throughput photovoltaic applications, on highly-doped Cz substrates we routinely obtain efficiencies above 16%. On 1 Ω cm FZ material substrates we reach efficiencies up to 18.0%, which is among the highest thin-film efficiencies ever reported. Additionally, a comparison to microelectronic-grade epitaxially grown cSiTF material underlines the excellent electrical quality of the epitaxial layers deposited.

  3. Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

    Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process

  4. Impact of the nanorod structure on the tandem thin-film solar cell.

    Tang, M; Chang, S T; Huang, C-X; Liu, Y T; Chen, Y H

    2011-07-01

    The novel thin-film solar cell was investigated with a nanorod structure that could solve the conflict between light absorption and carrier transport in the amorphous silicon (a-Si)/amorphous silicon-germanium (a-SiGe) tandem thin-film solar cell. This structure has an n-type a-Si nanorod array on the substrate, and an a-SiOx p-layer and an a-SiGe i-layer are sequentially grown along the surface of each n-type a-Si nanorod, for the bottom cell. After the above bottom-cell process, a similar process is used to fabricate an amorphous Si p-i-n top cell on the bottom cell. Under sunlight illumination, the light is absorbed along the vertical direction of the nanorod, but as the carrier transport is along the horizontal direction, the nanorod may absorb most of the sunlight. In the meantime, the solar cell is still thin enough for the effective transport of photogenerated carriers. PMID:22121598

  5. Present status of the development of thin-film solar cells

    Dhere, N.G. (Solar Energy Research Inst., Golden, CO (USA))

    1989-01-01

    The principle types of thin-film solar cells are based on single-junction and multi-junction hydrogenated amorphous silicon (a-Si:H), copper indium diselenide (CuInSe{sub 2}) and cadmium telluride (CdTe). Impressive gains in the performance of these cells have been reported in recent months. The problem of contacts to CdTe cells has been circumvented, resulting in the development of stable 11% efficient n-CdS/i-CdTe/p-ZnTe heterostructure solar cells. Total small-area (1 cm {sup 2}) efficiencies which have been measured at SERI under standard conditions (global AM 1.5) are as follows: single-junction a-Si:h, 11.5-12%; triple-junction a-Si:H:F, 12.4% (active area 13.3%); CuGaInSe {sub 2}, 14.1% (active area); CdTe, 10-11%; and CuInSe{sub 2}-a-Si:H cascade cells, 14.6%. Hydrogenated amorphous silicon solar-cell panels are being commercialized in several countries. Small-scale production of CdTe panels has also been undertaken. Recently, a CuInSe{sub 2} module with the world's highest thin-film module efficiency, 11.1% , an aperture area of 938 cm{sup 2} and a total power of 10.4 W, has been tested at SERI. (author).

  6. Thin Film Photovoltaic/Thermal Solar Panels

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  7. Photonic and plasmonic structures for enhancing efficiency of thin film silicon solar cells

    Pattnaik, Sambit

    Crystalline silicon solar cells use high cost processing techniques as well as thick materials that are ˜ 200µm thick to convert solar energy into electricity. From a cost viewpoint, it is highly advantageous to use thin film solar cells which are generally made in the range of 0.1-3µm in thickness. Due to this low thickness, the quantity of material is greatly reduced and so is the number and complexity of steps involved to complete a device, thereby allowing a continuous processing capability improving the throughput and hence greatly decreasing the cost. This also leads to faster payback time for the end user of the photovoltaic panel. In addition, due to the low thickness and the possibility of deposition on flexible foils, the photovoltaic (PV) modules can be flexible. Such flexible PV modules are well suited for building-integrated applications and for portable, foldable, PV power products. For economical applications of solar cells, high efficiency is an important consideration. Since Si is an indirect bandgap material, a thin film of Si needs efficient light trapping to achieve high optical absorption. The previous work in this field has been mostly based on randomly textured back reflectors. In this work, we have used a novel approach, a periodic photonic and plasmonic structure, to optimize current density of the devices by absorbing longer wavelengths without hampering other properties. The two dimensional diffraction effect generated by a periodic structure with the plasmonic light concentration achieved by silver cones to efficiently propagate light in the plane at the back surface of a solar cell, achieves a significant increase in optical absorption. Using such structures, we achieved a 50%+ increase in short circuit current in a nano-crystalline (nc-Si) solar cell relative to stainless steel. In addition to nc-Si solar cells on stainless steel, we have also used the periodic photonic structure to enhance optical absorption in amorphous cells and

  8. Performance of thin-film CdS/CdTe solar cells

    Hussain, O. M.; Reddy, P. J.

    1991-07-01

    A polycrystalline thin-film CdS/CdTe solar cell has been fabricated by means of a laser evaporation of CdTe onto thermally-evaporated CdS films. The cell has demonstrated a maximum efficiency of about 8.25 percent, in conjunction with a quantum efficiency of about 80 percent. The In-doped CdS 0.5-micron thick films were deposited onto conducting glass substrates at 473 K and annealed at 673 K in a hydrogen atmosphere; the Sb-doped CdTe 5-micron thickness films were deposited and then heat-treated in air at 673 K.

  9. Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

    Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

  10. Method of making a thin film cadmium telluride solar cell

    A method for making a photovoltaic cell is described comprising the steps of: (a) depositing a transparent or semi-transparent conductive window layer onto a substrate; (b) depositing a layer of cadmium telluride including phosphorus onto the window layer; (c) depositing a layer of lead telluride onto the layer of cadmium telluride; and (d) depositing a metallic electrode onto the lead telluride layer

  11. Research on the optimum hydrogenated silicon thin films for application in solar cells

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃. The electrical,structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current-voltage (Ⅰ - Ⅴ) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

  12. Multi-Material Front Contact for 19% Thin Film Solar Cells

    Joop van Deelen

    2016-02-01

    Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

  13. Enhanced light trapping with double-groove grating in thin-film amorphous silicon solar cells

    Wu, Jun

    2016-05-01

    A design to enhance light absorption in thin-film amorphous silicon (a-Si) solar cells is proposed. It is achieved by patterning a double-groove grating with waveguide layer as the absorbing layer and coating a double-groove grating anti-reflective layer in the front window of the cell. The broadband absorption under normal incidence can be achieved for both TE and TM polarizations. It is shown that the averaged integrated absorptions have very large angle independence for the optimized solar cell. An qualitative understanding of such broadband enhanced absorption effect, which is attributed to the guided mode resonance, is presented. The conclusions can be exploited to guide the design of solar cells based on a grating structure.

  14. Unlinking absorption and haze in thin film silicon solar cells front electrodes

    Boccard, Mathieu; Cuony, Peter; Battaglia, Corsin; Despeisse, Matthieu; Ballif, Christophe

    2010-01-01

    We study the respective influence of haze and free carrier absorption (FCA) of transparent front electrodes on the photogenerated current of micromorph thin film silicon solar cells. To decouple the haze and FCA we develop bi-layer front electrodes: a flat indium tin oxide layer assures conduction and allows us to tune FCA while the haze is adjusted by varying the thickness of a highly transparent rough ZnO layer. We show how a minimum amount of FCA leads only to a few percents absorption for...

  15. Large CZTS Nanoparticles Synthesized by Hot-Injection for Thin Film Solar Cells

    Engberg, Sara Lena Josefin; Lam, Yeng Ming; Schou, Jørgen

    The kesterite material, Cu2ZnSn(SxSe1-x)4 (CZTS), shows great promise as the absorber layer for future thin film solar cells. Solution processing allows for comparatively fast and inexpensive fabrication, and holds the record efficiency in the kesterite family. However, for nanoparticle (NP...... microscopy (SEM) as well as other surface characterization techniques. Our first photovoltaic device consisting of soda lime glass/Mo/CZTS/CdS/ZnO has been built from doctor blading of approx. 20 nm Cu2ZnSnS4 NPs in octanethiol, and annealed in Se-atmosphere. It had an efficiency of 1.4%....

  16. Amorphous Hydrogenated Carbon-Nitrogen Alloy Thin Films for Solar Cell Application

    ZHOU Zhi-Bin; DING Zheng-Ming; PANG Qian-Jun; CUI Rong-Qiang

    2001-01-01

    Amorphous hydrogenated carbon-nitrogen alloy (a-CNx :H) thin films have been deposited on silicon substratesby improved dc magnetron sputtering from a graphite target in nitrogen and hydrogen gas discharging. Thefilms are investigated by using Raman spectroscopy, x-ray photoelectron spectroscopy, spectral ellipsometer and electron spin resonance techniques. The optimized process condition for solar cell application is discussed. Thephotovoltaic property of a-CNx:H/silicon heterojunctions can be improved by the adjustment of the pressureratio of hydrogen to nitrogen and unbalanced magnetic field intensity. Open-circuit voltage and short-circuitcurrent reach 300mV and 5.52 Ma/cm2, respectively.

  17. Thin film tandem solar cells based on II-VI compounds

    Bloss, W. H.; Kimmerle, J.; Pfisterer, F.; Schock, H. W.

    The R & D efforts for the production of thin film tandem solar cells are presented. The tandem structures are based on II-VIand related compounds and are arranged as electrically isolated (4-terminal) cascades. For the high-bandgap part the material combinations under investigation are p-ZnTe/n-Zn(x)Cd(1-x)S, pn-ZnSe(y)Te(1-y), and p-CuGaSe2/n-Zn(x)Cd(1-x)S. The preliminary results of the investigations on all systems are promising; open circuit voltages of 1.3 V have been achieved.

  18. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Hongxia Wang

    2011-01-01

    The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,Ga)Se2 (CIGS) in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS) semiconductor material has emerged as one of the most promising candidates for this aim and h...

  19. Large CZTS Nanoparticles Synthesized by Hot-Injection for Thin Film Solar Cells.

    Engberg, Sara Lena Josefin; Lam, Yeng Ming; Schou, Jørgen

    2015-01-01

    The kesterite material, Cu2ZnSn(SxSe1-x)4 (CZTS), shows great promise as the absorber layer for future thin film solar cells. Solution processing allows for comparatively fast and inexpensive fabrication, and holds the record efficiency in the kesterite family. However, for nanoparticle (NP) solution processing to be a feasible fabrication route, the amount of carbon in the film has to be limited. In our work, we try to limit the organic material in the film by synthesizing larger NPs. Larger...

  20. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers.There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  1. Analysis of the diode characteristics of thin film solar cells based on CdTe

    A physical approach to the optimization of photoelectric processes in thin film multilayer systems has been developed. By means of a simulation of the influence of light-diode characteristics on the efficiency factor, it is concluded that the optimization of the photoelectric processes in ITO/CdS/CdTe/Cu/Au film solar cells is mainly determined by two competing physical mechanisms: an increase in the efficiency of the process of distribution of nonequilibrium charge carriers and a reduction in the efficiency of their generation, as the CdS layer thickness grows

  2. Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells

    Gorji, Nima E.; Ugo Reggiani; Leonardo Sandrolini

    2015-01-01

    The band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3 and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor stat...

  3. In Situ Measuring System Designed for Improvement of Poly-Si Thin Film Solar Cells

    Pikna, Peter; Fejfar, Antonín; Ledinský, Martin; Vetushka, Aliaksi; Kočka, Jan; Benda, V.

    Honolulu, 2011. [The Fourth International Forum on Multidisciplinary Education and Research for Energy Science. 17.12.2011-21.12. 2011, Honolulu, Hawaii] R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : polycrystalline silicon * thin film solar cells * water vapor passivation Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. 13.4% efficient thin-film CdS/CdTe solar cells

    Chu, T. L.; Chu, S. S.; Ferekides, C.; Wu, C. Q.; Britt, J.; Wang, C.

    1991-12-01

    Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and p-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of p-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm2 area with an AM 1.5 efficiency of 13.4% are reported.

  5. 13. 4% efficient thin-film CdS/CdTe solar cells

    Chu, T.L.; Chu, S.S.; Ferekides, C.; Wu, C.Q.; Britt, J.; Wang, C. (Department of Electrical Engineering, University of South Florida, Tampa, Florida (USA))

    1991-12-15

    Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and {ital p}-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of {ital p}-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm{sup 2} area with an AM 1.5 efficiency of 13.4% are reported.

  6. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    Fonash, S.J. [Pennsylvania State Univ., University Park, PA (United States)

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  7. Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells%Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells

    岳红云; 吴爱民; 秦福文; 李廷举

    2011-01-01

    Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon (μc-Si:H) for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1:1 and 2:3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.

  8. Crystalline silicon thin-film solar cells. Final report; Duennschicht-Solarzellen aus kristallinem Silizium. Abschlussbericht

    Raeuber, A.; Wettling, W.; Eyer, A.; Faller, F.; Hebling, C.; Hurrle, A.; Lautenschlager, H.; Luedemann, R.; Lutz, F.; Reber, S.; Schetter, C.; Schillinger, N.; Schindler, R.; Schumacher, J.O.; Warta, W.

    1998-09-01

    Activities under the project covered all the processes involved in the fabrication of a crystalline silicon thin-film solar cell applying the high-temperature method, so that R and D work was carried out from testing of materials suitable for the dielectric and semiconductive layers required, development of the process sequences for fabrication of the solar cells, simulation and optimisation of the cell design through to final characterisation of the thin films and solar cells. Several cell designs were tested in parallel for intercomparison. Several high-temperature resistant materials were tested for their suitability to serve as substrate materials.The final project report presents the basic research work and studies on the physical and technological aspects of the crystalline thin-film solar cell as well as the major results of specific development work. The report shows that significant progress could be achieved. The efficiencies of all solar cell designs developed under the project are between 9 and 11%, including those using substrate materials easily available in industry, and it could be demonstrated that the solar cells are equal in potential to the wafer-based silicon cell. (orig./CB) [Deutsch] Es wurden alle wesentlichen Teilprozesse, die fuer die Entwicklung einer kristallinen Silicium Duennschicht-Solarzelle nach dem Hochtemperaturverfahren wichtig sind, bearbeitet. Der Projektrahmen reichte von der Materialentwicklung fuer die dielektrischen und halbleitenden Schichten ueber die Entwicklung der Solarzellenprozessschritte, die Simulation und Optimierung des Zellendesigns bis zur Charakterisierung von Schichten und Solarzellen. Dabei wurden mehrere verschiedene Zellentypen parallel untersucht und miteinander verglichen. In einer Studie wurden verschiedene hochtemperaturfeste Materialien auf ihre Eignung als Substrate hin untersucht. In dem hier vorgelegten Abschlussbericht werden die erarbeiteten Grundlagen zur Physik und Technologie der kristallinen

  9. Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells

    ElAnzeery, H.; El Daif, O.; Buffière, M.; Oueslati, S.; Ben Messaoud, K.; Agten, D.; Brammertz, G.; Guindi, R.; Kniknie, B.; Meuris, M.; Poortmans, J.

    2015-01-01

    Cu2nSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low-bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical characteristic

  10. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  11. Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

    Fang, Fang

    2011-12-01

    Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a

  12. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  13. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  14. Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation

    Li Da

    2015-01-01

    Full Text Available Laser single side contact formation (LSSC and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF solar cells on graphite substrates. The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor. In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area silicon thin film solar cell on graphite substrate. Current density-voltage (J-V measurement, quantum efficiency (QE and light beam induced current (LBiC are used as characterization methods.

  15. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  16. Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells

    Söderström, T.; Haug, F.-J.; Niquille, X.; Terrazzoni, V.; Ballif, C.

    2009-02-01

    The micromorph solar cell (stack of amorphous and microcrystalline cells) concept is the key for achieving high efficiency stabilized thin film silicon solar cells. We introduce a device structure that allows a better control of the light in-coupling into the two subcell components. It is based on an asymmetric intermediate reflector, which increases the effective thickness of the a-Si:H by a factor of more than three. Hence, the a-Si:H thickness reduction diminishes the light induced degradation, and micromorph tandem cells with 11.2% initial and 9.8% stabilized efficiencies (1000 h, 50 °C, and 100 mW/cm2) are made on plastic substrates with Tg<180 °C.

  17. ZnO transparent conductive oxide for thin film silicon solar cells

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  18. Electronic structure of electrodeposited thin film CdTe solar cells

    Ullal, H. S.

    1988-05-01

    Independent experimental verification done at four research laboratories, namely, Ametek, Colorado State University (CSU), Institute of Energy Conversion (IEC), and Solar Energy Research Institute (SERI) confirm the n-i-p model proposed by Ametek. The experiments done for the verification of the n-i-p structure are the high frequency capacitance-voltage, light and voltage bias quantum efficiency, and EBIC measurements. All experimental evidence suggests that the n-i-p model is appropriate for the existing n-CdS/i-CdTe/p-ZnTe cell structure. From the C-V measurements, the depletion width has been estimated at 1.7 to 2.0 microns and corresponds to the thickness of the CdTe film. This unique thin films device design has resulted in improved stability and a SERI-verified world record single-junction total area AM1.5 global efficiency of 11 percent. Further refinements in device design and cell processing should result in 12 to 13 percent efficiencies for thin-film CdTe solar cells in the not-too-distant future.

  19. Electronic structure of electrodeposited thin film CdTe solar cells

    Ullal, H.S.

    1988-05-01

    Independent experimental verification done at four research laboratories, namely, Ametek, Colorado State University (CSU), Institute of Energy Conversion (IEC), and Solar Energy Research Institute (SERI) confirm the n-i-p model proposed by Ametek. The experiments done for the verification of the n-i-p structure are the high frequency capacitance-voltage, light and voltage bias quantum efficiency, and EBIC measurements. All experimental evidence suggests that the n-i-p model is appropriate for the existing n-CdS/i-CdTe/p-ZnTe cell structure. From the C-V measurements, the depletion width has been estimated at 1.7-2.0 ..mu..m and corresponds to the thickness of the CdTe film. This unique thin films device design has resulted in improved stability and a SERI-verified world record single-junction total area AM1.5 global efficiency of 11%. Further refinements in device design and cell processing should result in 12-13% efficiencies for thin-film CdTe solar cells in the not-too-distant future.

  20. A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

    Adelifard, Mehdi; Darudi, Hosein

    2016-07-01

    There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

  1. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    de Jong, M. M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic substrates can be a solution. In this thesis, we investigate the possibilities of depositing thin film solar cells directly onto cheap plastic substrates. Micro-textured glass and sheets, which have a wide range of applications, such as in green house, lighting etc, are applied in these solar cells for light trapping. Thin silicon films can be produced by decomposing silane gas, using a plasma process. In these types of processes, the temperature of the growing surface has a large influence on the quality of the grown films. Because plastic substrates limit the maximum tolerable substrate temperature, new methods have to be developed to produce device-grade silicon layers. At low temperature, polysilanes can form in the plasma, eventually forming dust particles, which can deteriorate device performance. By studying the spatially resolved optical emission from the plasma between the electrodes, we can identify whether we have a dusty plasma. Furthermore, we found an explanation for the temperature dependence of dust formation; Monitoring the formation of polysilanes as a function of temperature using a mass-spectrometer, we observed that the polymerization rate is indeed influenced by the substrate temperature. For solar cell substrate material, our choice was polycarbonate (PC), because of its low cost, its excellent transparency and its relatively high glass transition temperature of 130-140°C. At 130°C we searched for deposition recipes for device quality silicon, using a very high frequency plasma enhanced chemical deposition process. By diluting the feedstock silane with hydrogen gas, the silicon quality can be improved for amorphous silicon (a-Si), until we reach the

  2. Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

    Research highlights: → Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH3COO)2.2H2O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). → The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. → Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be ∼150 nm. → The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH3COO)2.2H2O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be ∼150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

  3. Effect of CdCl2 annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

    In order to study the effect of CdCl2 annealing treatment on thin CdS films and CdTe/CdS thin film solar cells, a comparative study was carried out on three types of CdTe/CdS solar cells, which had different kinds of CdS window layer: as-deposited CdS, air-annealed CdS without CdCl2 pre-coating, and CdCl2-annealed CdS. When annealed in air the CdS film was partially oxidated to CdO and CdSO4. These oxides increased the series resistance of the CdTe solar cell and led to the lowest fill factor. The presence of CdCl2 on the surface of a CdS thin film during heat treatment in air protected it from oxidation and promoted the recrystallization of the CdS film, resulting in large and closely packed grains with a grain size of ∝ 50 -150 nm. CdTe/CdS solar cell with such a kind of CdS window layer showed the largest short circuit current and highest conversion efficiency of 12.4%. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    Finger, F., E-mail: f.finger@fz-juelich.d [IEF-5 Photovoltaik, Forschungszentrum Juelich, 52425 Juelich (Germany); Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A. [IEF-5 Photovoltaik, Forschungszentrum Juelich, 52425 Juelich (Germany); Houben, L. [IFF, Mikrostruktur, Forschungszentrum Juelich, 52425 Juelich (Germany); Huang, Y.; Klein, S. [IEF-5 Photovoltaik, Forschungszentrum Juelich, 52425 Juelich (Germany); Luysberg, M. [IFF, Mikrostruktur, Forschungszentrum Juelich, 52425 Juelich (Germany); Wang, H.; Xiao, L. [IEF-5 Photovoltaik, Forschungszentrum Juelich, 52425 Juelich (Germany)

    2009-04-30

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form ({mu}c-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the {mu}c-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  5. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  6. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    Boccard Mathieu

    2014-07-01

    Full Text Available When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration or superstrate (in p-i-n configuration. We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but identical sheet resistance and identical light-scattering properties. In the infrared part of the spectrum, parasitic absorption in the front or back electrode is shown to have a similar effect on the current generation in the cell, which is confirmed by modeling. By combining highly transparent front and back ZnO electrodes and high-quality silicon layers, a micromorph device with a stabilized efficiency of 11.75% is obtained.

  7. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    Boccard, Mathieu; Cuony, Peter; Hänni, Simon; Stuckelberger, Michael; Haug, Franz-Josef; Meillaud, Fanny; Despeisse, Matthieu; Ballif, Christophe

    2014-07-01

    When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration) or superstrate (in p-i-n configuration). We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but identical sheet resistance and identical light-scattering properties. In the infrared part of the spectrum, parasitic absorption in the front or back electrode is shown to have a similar effect on the current generation in the cell, which is confirmed by modeling. By combining highly transparent front and back ZnO electrodes and high-quality silicon layers, a micromorph device with a stabilized efficiency of 11.75% is obtained.

  8. Deep level transient spectroscopy measurements on CuInS2-thin film solar cells

    During the last decade CuInS2 was investigated for its use as absorber in thin film solar cells. Now these cells are ready for volume production. The advantages against already used materials are e. g. high absorbing capacity and cost-efficient and sustainable production. Because of the great discrepancy between predicted degree of efficiency and the already reached degree more investigations are necessary. To get a better understanding of the electron transport and recombination in order to arise efficiency we characterize the solar cells by deep level transient spectroscopy (DLTS). This method gives information about crystal defects depending on their electric position. Transient capacity measurements in the range of 25 K and 350 K allow us to determine activation energy and concentration of electron traps

  9. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency

  10. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao [School of Electronic Science and Engineering, Southeast University, Nanjing 210096, Jiangsu Province (China)

    2015-12-21

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.

  11. Light trapping regimes in thin-film silicon solar cells with a photonic pattern.

    Zanotto, Simone; Liscidini, Marco; Andreani, Lucio Claudio

    2010-03-01

    We present a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub-micron scale realized in the silicon layer and filled with silicon dioxide right below a properly designed antireflection (AR) coating. The study and optimization of the structure as a function of all the photonic lattice parameters, together with the calculation of the absorption in a single layer, allows to identify the different roles of the periodic pattern in determining an increase of the absorbance. From one side, the photonic crystal and the AR coating act as impedance matching layers, thus minimizing reflection of incident light over a particularly wide range of frequencies. Moreover a strong absorption enhancement is observed when the incident light is coupled into the quasi guided modes of the photonic slab. We found a substantial increase of the short-circuit current when the parameters are properly optimized, demonstrating the advantage of a wavelength-scale, photonic crystal based approach for patterning of thin-film silicon solar cells. PMID:20389438

  12. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb2Te3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb2Te3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

  13. Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels

    Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

    2013-01-01

    This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

  14. Kelvin Probe Measurements on Solar Cells and Other Thin Film Devices

    Delk, John; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

    2001-01-01

    The Kelvin Probe (KP) has been used for years to measure the surface potential of metals and semiconductors. The KP is an elegantly simple but powerful tool invented by Lord Kelvin around the turn of the century. Using changes in surface potentials as a result of changing the intensity and wavelength of illumination, the KP returns data on material parameters such as band gap energies and the energy levels of interface states. We have employed the KP in the study of CdTe-based solar cells and quantum dot-based solar cells, as well as other thin-film devices. We hope eventually that the KP will be used as an in-line testing station for a fabrication process so that unfinished devices that will not meet requirements can be thrown out before the processing is completed, thus saving resources. Results of these studies will be presented.

  15. Hydrophobic perfluoropolymer thin-film encapsulation for enhanced stability of inverted polymer solar cells

    We report hydrophobic perfluoropolymer thin-film encapsulation for enhancing the air ambient stability of inverted polymer solar cells (PSCs). Using a perfluoropolymer, poly(perfluorodecylmethacrylate) (PFDMA), as an encapsulation material, an orthogonal process that enables a solution-processing of encapsulation polymers to be coated directly on the inverted PSCs without damaging the underlying organic components is possible. Particularly, with PFDMA encapsulation, the air ambient stability was significantly enhanced, showing only an efficiency reduction of 23.3% after 456 hours of air exposure. The enhanced device stability can be attributed to the hydrophobic property of the PFDMA surface, which suppresses the transmission of air ambient gas molecules into the solar cells. Thus, the PFDMA coating can be beneficial in achieving high-stability organic electronics by using an easy-to-use route.

  16. Laser crystallization induced multicrystalline silicon thin film solar cells on glass : european HIGH-EF project

    The european project HIGH-EF is aimed at developing a unique process for silicon thin films based solar cells on glass substrate. To provide high solar cells efficiency (more than 12 percent) a combination of laser crystallization of a seed layer and an additional solid phase epitaxy of thicker layer is realized. In a first step, the crystallization of the seed layer is obtained by scanning a focused in-line laser beam obtained by a specific optical lens system. In a second step, epitaxial growth of a large grains active silicon layer is achieved by solid phase epitaxy. Process optimization is supported by numerical simulations of both melting and crystallization process of the seed layer as well as epitaxial solid phase crystallization

  17. Enhanced photon management in silicon thin film solar cells with different front and back interface texture.

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-01-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm(2) resulting in a total short circuit current of 23.65 mA/cm(2) and an energy conversion efficiency of 8.35%. PMID:27481226

  18. Temperature dependent electrical characterization of thin film Cu2ZnSnSe4 solar cells

    Impedance spectroscopy (IS) and current–voltage characteristics measurements were applied to study properties of a Cu2ZnSnSe4 (CZTSe) thin film solar cell. IS measurements were done in the frequency range 20 Hz to 10 MHz. The measurement temperature was varied from 10 K to 325 K with a step ▵T  =  5 K. Temperature dependence of V oc revealed an activation energy of 962 meV, which is in the vicinity of the band gap energy of CZTSe and hence the dominating recombination mechanism in this solar cell is bulk recombination. Different temperature ranges, where electrical properties change, were found. Interface states at grain boundaries with different properties were revealed to play an important role in impedance measurements. These states can be described by introducing a constant phase element in the equivalent circuit. (paper)

  19. Temperature dependent electrical characterization of thin film Cu2ZnSnSe4 solar cells

    Kask, E.; Krustok, J.; Giraldo, S.; Neuschitzer, M.; López-Marino, S.; Saucedo, E.

    2016-03-01

    Impedance spectroscopy (IS) and current-voltage characteristics measurements were applied to study properties of a Cu2ZnSnSe4 (CZTSe) thin film solar cell. IS measurements were done in the frequency range 20 Hz to 10 MHz. The measurement temperature was varied from 10 K to 325 K with a step ▵T  =  5 K. Temperature dependence of V oc revealed an activation energy of 962 meV, which is in the vicinity of the band gap energy of CZTSe and hence the dominating recombination mechanism in this solar cell is bulk recombination. Different temperature ranges, where electrical properties change, were found. Interface states at grain boundaries with different properties were revealed to play an important role in impedance measurements. These states can be described by introducing a constant phase element in the equivalent circuit.

  20. Enhanced photon management in silicon thin film solar cells with different front and back interface texture

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A.; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-08-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm2 resulting in a total short circuit current of 23.65 mA/cm2 and an energy conversion efficiency of 8.35%.

  1. Post-growth process for flexible CdS/CdTe thin film solar cells with high specific power.

    Cho, Eunwoo; Kang, Yoonmook; Kim, Donghwan; Kim, Jihyun

    2016-05-16

    We demonstrated a flexible CdS/CdTe thin film solar cell with high specific power of approximately 254 W/kg. A flexible and ultra-light weight CdS/CdTe cell treated with pre-NP etch process exhibited high conversion efficiency of 13.56% in superstrate configuration. Morphological, structural and optical changes of CdS/CdTe thin films were characterized when pre-NP etch step was incorporated to the conventional post-deposition process. Improvement of photovoltaic parameters can be attributed to the removal of the oxide and the formation of Te-rich layer, which benefit the activation process. Pre-NP etched cell maintained their flexibility and performance under the repeated tensile strain of 0.13%. Our method can pave a way for manufacturing flexible CdS/CdTe thin film solar cells with high specific power for mobile and aerospace applications. PMID:27409952

  2. In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

    Buehlmann, P.; Bailat, J.; Dominé, D.; Billet, A.; Meillaud, F.; Feltrin, A.; Ballif, C.

    2007-10-01

    We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40V, fill factor=71.9%, and Jsc=12.1mA/cm2) is achieved with top cell, SOIR, and bottom cell thicknesses of 270, 95, and 1800nm, respectively.

  3. Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture

    Fang, Jia; Liu, Bofei; Zhao, Ying; Zhang, Xiaodan

    2014-01-01

    Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structur...

  4. Enhancing light trapping properties of thin film solar cells by plasmonic effect of silver nanoparticles.

    Jung, Junhee; Ha, Kyungyeon; Cho, Jaehyun; Ahn, Shihyun; Park, Hyeongsik; Hussain, Shahzada Qamar; Choi, Mansoo; Yi, Junsin

    2013-12-01

    The preparation of thin film silicon solar cells containing Ag nanoparticles is reported in this article. Ag nanoparticles were deposited on fluorine doped tin oxide coated glass substrates by the evaporation and condensation method. a-Si:H solar cells were deposited on these substrates by cluster type plasma enhanced chemical vapor deposition. We discuss the double textured surface effect with respect to both the surface morphology of the substrate and the plasmonic effect of the Ag nanoparticles. Ag nanoparticles of various sizes from 10 to 100 nm were deposited. The haze values of the Ag embedded samples increased with increasing particle size whereas the optical transmittance decreased at the same conditions. The solar cell with the 30 nm size Ag nanoparticles showed a short circuit current density of 12.97 mA/cm2, which is 0.53 mA/cm2 higher than that of the reference solar cell without Ag nanoparticles, and the highest quantum efficiency for wavelengths from 550 to 800 nm. When 30 nm size nanoparticles were employed, the conversion efficiency of the solar cell was increased from 6.195% to 6.696%. This study reports the application of the scattering effect of Ag nanoparticles for the improvement of the conversion efficiency of amorphous silicon solar cells. PMID:24266153

  5. Time Domain Characterization of Light Trapping States in Thin Film Solar Cells

    Pfeiffer W.

    2013-03-01

    Full Text Available Spectral interferometry of the backscattered radiation reveals coherence lifetimes of about 150 fs for nanolocalized electromagnetic modes in textured layered nanostructures as they are commonly used in thin film photovoltaics to achieve high cell efficiencies.

  6. Enhancement of light trapping in thin-film solar cells through Ag

    Yiming Bai; Han Zhang; Jun Wang; Nuofu Chen; Jianxi Yao; Tianmao Huang; Xingwang Zhang; Zhigang Yin; Zhen Fu

    2011-01-01

    Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles. Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated. The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively. When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles. Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.%@@ Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles.Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated.The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively.When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles.Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.

  7. Light trapping in thin film solar cells using photonic engineering device concepts

    Mutitu, James Gichuhi

    In this era of uncertainty concerning future energy solutions, strong reservations have arisen over the continued use and pursuit of fossil fuels and other conventional sources of energy. Moreover, there is currently a strong and global push for the implementation of stringent measures, in order to reduce the amount of green house gases emitted by every nation. As a consequence, there has emerged a sudden and frantic rush for new renewable energy solutions. In this world of renewable energy technologies is where we find photovoltaic (PV) technology today. However, as is, there are still many issues that need to be addressed before solar energy technologies become economically viable and available to all people, in every part of the world. This renewed interest in the development of solar electricity, has led to the advancement of new avenues that address the issues of cost and efficiency associated with PV. To this end, one of the prominent approaches being explored is thin film solar cell (TFSC) technology, which offers prospects of lower material costs and enables larger units of manufacture than conventional wafer based technology. However, TFSC technologies suffer from one major problem; they have lower efficiencies than conventional wafer based solar cell technologies. This lesser efficiency is based on a number of reasons, one of which is that with less material, there is less volume for the absorption of incident photons. This shortcoming leads to the need for optical light trapping; which is concerned with admitting the maximum amount of light into the solar cell and keeping the light within the structure for as long as possible. In this thesis, I present the fundamental scientific ideas, practice and methodology behind the application of photonic engineering device concepts to increase the light trapping capacity of thin film solar cells. In the introductory chapters, I develop the basic ideas behind light trapping in a sequential manner, where the effects

  8. Nanoimprint lithography for high-efficiency thin-film silicon solar cells.

    Battaglia, Corsin; Escarré, Jordi; Söderström, Karin; Erni, Lukas; Ding, Laura; Bugnon, Grégory; Billet, Adrian; Boccard, Mathieu; Barraud, Loris; De Wolf, Stefaan; Haug, Franz-Josef; Despeisse, Matthieu; Ballif, Christophe

    2011-02-01

    We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tandem junction cells. Excellent light incoupling results in a remarkable summed short-circuit current density of 25.9 mA/cm(2) for amorphous top cell and microcrystalline bottom cell thicknesses of only 250 and 1100 nm, respectively. As efforts to maximize light harvesting continue, our study validates nanoimprinting as a versatile tool to investigate nanophotonic effects of a large variety of nanostructures directly on device performance. PMID:21302973

  9. Silicon Light: a European FP7 project aiming at high efficiency thin film silicon solar cells on foil. Monolithic series interconnection of flexible thin-film PV devices

    Soppe, W. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Haug, F.J. [Ecole Polytechnique Federale de Lausanne EPFL, Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland); Couty, P. [VHFTechnologies SA, Rue Edouard-Verdan 2, CH-1400 Yverdon-les-Bains (Switzerland); Duchamp, M. [Technical University of Denmark, Center for Electron Nanoscopy, DK-2800 Kongens Lyngby (Denmark); Schipper, W. [Nanoptics GmbH, Innungstr.5, 21244 Buchholz (Germany); Krc, J. [University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25, SI-1000 Ljubljana (Slovenia); Sanchez, G. [Universidad Politecnica de Valencia, I.U.I. Centro de Tecnologia Nanofotonica, 46022 Valencia (Spain); Leitner, K. [Umicore Thin Film Products AG, Balzers (Liechtenstein); Wang, Q. [Shanghai Jiaotong University, Research Institute of Micro/Nanometer Science and Technology, 800 Dongchuan Road, Min Hang, 200240 Shanghai (China)

    2011-09-15

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: (a) advanced light trapping by implementing nanotexturization through UV Nano Imprinting Lithography (UV-NIL); (b) growth of crack-free silicon absorber layers on highly textured substrates; (c) development of new TCOs which should combine the best properties of presently available materials like ITO and AZO. The paper presents the midterm status of the project results, showing model calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8% have been made, paving the way towards a-Si/{mu}c-Si tandem cells with more than 11% efficiency.

  10. Sputtered CdTe thin film solar cells with Cu2Te/Au back contact

    In this work, Cu2Te/Au back contact for CdTe thin film solar cells were prepared by vacuum evaporation. Influence of annealing temperature on the structure and electrical properties of Cu2Te films were investigated by field emission scanning electron microscope, X-ray diffraction, and Hall effect measurement. Also, CdS/CdTe thin film solar cells were fabricated by magnetron sputtering process, which is favorable for large area deposition and mass production, and the photovoltaic characteristics were studied. As the annealing temperature was increased, the crystal structure transformed from Cu2Te for as-deposited film to Cu2−xTe hexagonal phase, and the grains in the film became bigger. The electrical resistivity was slightly higher by the annealing. The cell efficiency was significantly improved by the heat treatment, and showed a maximum value of 9.14% at 180 °C. From these results, Cu2Te/Au contact acts as the proper pseudo-ohmic contact onto CdTe film. However, further increase of annealing temperature caused the deterioration of cell performance. - Highlights: • Annealing effects of the vacuum evaporated Cu2Te films were investigated. • The transformation from Cu2Te to Cu2−xTe hexagonal phase occurred by annealing. • The performance of the solar cell was highly increased by annealing at 180 °C. • Cu2Te/Au contact acts as the proper pseudo-ohmic contact onto CdTe film