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The paper studies the effect of crystal structure of LiNbO_3 monocrystals on NMR spectra of "7 Li and "9"3 Nb. Models of defect structure are analyzed via comparison of NMR experimental spectra and gradients of electrical field predicted on the basis of the calculations on "7 Li and "9"3 Nb nuclei using the relevant model. It is shown that no one of the main models of lithium niobate defect structure explains the peculiarities of NMR spectra. Conclusions are made about the independence of the reasons of occurrence of NMR additions lines "7 Li and "9"3 Nb, as well as, about links of "9"3 Nb NMR weak additional lines with the ranges of a different crystalline phase that may form while growing. 18 refs., 2 figs., 3 tabs.

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Metal-organic chemical vapor deposition (MOCVD) made layers of strontium-bismuth-tantalate (SBT) were characterized by spectroscopic ellipsometry (SE) using the Adachi model [S. Adachi, Phys. Rev. B 35 (1987) 7454-7463]. The evaluated optical parameters were correlated with the physical and chemical behavior examined by X-ray diffraction (XRD). As a result, it was possible to fit the measured spectra with the Adachi model in a wide range covering the region of the band gap. The Adachi model provides electronic layer parameters like the transition energy E 0 and broadening ?. Our investigations established a correlation between XRD-determined average grain size and the electronic layer parameters.

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Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi_2) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability ...

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The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

Science.gov (United States)

Pore Fraction in Yttrium-Barium-Copper-Oxide and. Other Polycrystalline. Materials ...... Properties of Yttrium Ceramic. Sov. J. LowTemp.Phys. 14:395-402 . ...

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We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

CERN Document Server

We present the initial results of an observational study into the variation of the dominant length-scale of quiet solar emission: supergranulation. This length-scale reflects the radiative energy in the plasma of the upper solar chromosphere and transition region at the magnetic network boundaries forming as a result of the relentless interaction of magnetic fields and convective motions of the Sun's interior. We demonstrate that a net difference of ~0.5Mm in the supergranular emission length-scale occurs when comparing observations cycle 22/23 and cycle 23/24 minima. This variation in scale is reproduced in the datasets of multiple space- and ground-based instruments and using different diagnostic measures. By means of extension, we consider the variation of the supergranular length-scale over multiple solar minima by analyzing a subset of the Mt Wilson Solar Observatory (MWO) Ca II K image record. The observations and analysis presented provide a tantalizing look ...

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Particle physics is driven by five great topics. Neutrino oscillations and masses are now at the fore. The standard model with extensions to supersymmetry and a Higgs to generate mass explains much of the field. The origins of CP violation are not understood. The possibility of extra dimensions has raised tantalizing new questions. A fifth topic lurking in the background is the possibility of something totally different. Many of the questions raised by these topics require powerful new accelerators. It is not an overstatement to say that for some of the issues, the accelerator is almost the experiment. Indeed some of the questions require machines beyond our present capability. As this volume attests, there are parts of the particle physics program that have been significantly advanced without the use of accelerators such as the subject of neutrino oscillations and many aspects of the particle-cosmology interface. At this stage in the development of physics, both ...

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This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.

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In the early days of Moessbauer spectroscopy, it was demonstrated that coherent scattering of photons emitted by a Moessbauer source can be observed. In spite of the fact that scattering experiments could give information not accessible by the absorption method, they are not widely used. The reasons for this are, on the one hand, experimental difficulties, and on the other hand, the form of the samples, which should be large single crystals in most cases. In this work, we present a Moessbauer diffraction measurement on polycrystalline bcc iron where these problems have been overcome. We demonstrate that using the kinematical theory of gamma-ray diffraction, useful information on the relative orientation of the crystallographic axis to the hyperfine field directions can be subtracted. (orig.)

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The kinetics of HO{sub 2} radicals in UV-irradiated frozen dilute solutions of H{sub 2}O{sub 2} were followed by the ESR technique. Radical disproportionations at the irradiation temperature were found to be adequately described in terms of dispersive kinetics by a second-order equal-concentration kinetic equation with rate parameters changing non-monotonically in the temperature range 100-200 K. These changes are thought to occur due to well separated structural relaxation regions of polycrystalline ice in the above temperature range. (author).

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The velocity distribution of electrons ejected close to the forward direction by 0.8-2 MeV/A ions traversing various solid targets, including a Au monocrystal, is measured in coincidence with emerging charge-selected ions. The velocity spectrum is observed to be independent of outgoing projectile velocity and charge state for polycrystalline targets. Measurements on the Au crystal under channeling conditions show dependences on final charge state, and are tentatively explained by assuming that the main contribution to the production yield comes from the non-channeled fraction of the ions. A simple model for the creation of the forward-ejected electrons is proposed, which accounts for most of the experimental findings.

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Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our previous best efficiency from ...

International Nuclear Information System (INIS)

Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).

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The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

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Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).

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Er{sub 3}NbO{sub 7} phosphor was synthesized by sintering a mixture of Er{sub 2}O{sub 3} and Nb{sub 2}O{sub 5} powder in a molar ratio of 3:1 at 1600 deg. C over 55 h. Optical absorption and emission characteristics of Er{sup 3+} ions in the calcined Er{sub 3}NbO{sub 7} powder were investigated and discussed compared with ErNbO{sub 4} phosphor and a Z-cut congruent Er (2 mol%):LiNbO{sub 3} single crystal. The absorption and emission studies show that, due to different crystal structures, the spectroscopic properties of these niobates have some differences in spectral shape, peak position, and relative intensity, especially at 1.5 {mu}m. The most obvious spectral feature of the Er{sub 3}NbO{sub 7} is that the spectral structure of band instead of peak is observed in its absorption or emission spectrum due to the existence of local structural disorder and multiple Er{sup 3+} sites. The Er{sub 3}NbO{sub 4} shows stronger upconversion emission than the single crystal ...

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Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

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Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

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The electronic structure and surface interactions vapor-deposited Cu on single-crystal and polycrystalline Bi_2Ca/sub 1+//sub x//sub Sr>2-//sub x//sub Cu>2/O/sub 8+//sub y/ were studied using x-ray photoelectron spectroscopy. The results are compared to the Cu/YBa_2Cu_3O/sub 7-//sub x/ interface. Changes in the Cu 2p satellite emission indicate that the Cu adatoms do not disrupt Bi_2Ca/sub 1+//sub x/Sr/sub 2-//sub x/Cu_2O/sub 8+//sub y/ as extensively as YBa_2Cu_3O/sub 7-//sub x/. However, deposition of Cu induces changes in the Bi environment in the superconductor, and surface segregation of Bi metal was observed at high coverages. Core-level attenuation results suggests minimal outdiffusion of oxygen, in contrast with what is observed for Cu/YBa_2Cu_3O/sub 7-//sub x/.

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The behavior of the superconducting transition temperature T/sub c/ of single-crystal and polycrystalline V_3Si was investigated as a function of low-fluence neutron irradiation. It is found that the initial degradation of T/sub c/ is sample-dependent, some specimens showing no degradation in T/sub c/ up to a fluence of 2 x 10"1"8 n/cm"2. This and many other earlier observations on low-fluence behavior are explained in terms of a recently proposed model of radiation damage in A-15 compounds.

International Nuclear Information System (INIS)

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

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We present the low-temperature physical properties of the polycrystalline perovskite systems La2/3A1/3Mn1-xCoxO3, A=Ca, Sr (0.5x1) including electrical resistance, magnetization, ac and dc susceptibilities. The experimental data suggest the presence of correlated ferromagnetic clusters embedded in some non-ferromagnetic matrix. The systems show semiconducting behavior and negative magnetoresistance.

International Nuclear Information System (INIS)

New data about the structure of high-temperature resistant metalloceramic plasma sprayed coatings in micro and nano areas are presented. Application of the new instrumental methods: transmission electron microscopy combined with selected area electron diffraction mode is possible to obtain these data. The first layer in Ni based metallic bond coat shows nanocrystalline structure. External ceramic layer based on stabilised ZrO_2 is polycrystalline and contains both cubic and tetragonal crystalline phases. Local inhomogeneities in coatings phase composition are determined. (author)

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The results obtained from the magnetization, specific heat and electrical resistivity measurements on a polycrystalline sample of Pr_2Pd_3Si_5 are reported. The temperature dependence of magnetic susceptibility at low field (0.01 T) exhibits pronounced anomaly below 7 K due to antiferromagnetic ordering. The electrical resistivity and specific heat data also exhibit sharp transition at 6.6 K evidencing the onset of antiferromagnetic order. A fit to the electrical resistivity data below 6 K suggests the presence of an energy gap in magnon spectrum in the ordered state. (author)

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AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)

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Alpha-particle emission induced by neutron bombardment of carbon has been studied from threshold to over 30 MeV using the spallation neutron source at WNR/LAMPF. Targets include thin foils of CH{sub 2} and thicker foils of CH and polycrystalline graphite. Comparisons are made with evaluated data. Values for KERMA (kinetic energy released in materials) based on the results will be presented and compared with those obtained through other experimental approaches.

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Micro-compression specimens, 1O-15{mu}m in diameter by 20-30{mu}m in height, were produced from individual parent grains in a polycrystalline U-13at%Nb shape-memory alloy using the focused ion beam (FIB) technique. The specimens were tested in a nanoindentation instrument with a flat diamond tip to investigate stress-strain behavior as a function of crystallographic orientation. The results are in qualitative agreement with a single-crystal accommodation strain (Bain strain) model of the shape-memory effect for this alloy.

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Superplasticity can be generally achieved by grain boundary sliding (GBS). The GBS in polycrystalline materials sometimes accompanies with intergranular fracture because of stress concentrations at triple points and/or GB irregularities. To develop the superplastic flow, it is necessary to suppress the intergranular cracking. In the present study, therefore, polycrystalline molybdenum with distinct GB microstructures, such as grain boundary character distribution (GBCD), has been employed to clarify the relationship between fracture behaviour and GB microstructures. Microstructures were analyzed using a FE-SEM/EBSP/OIM system prior to 4-points bending tests at 77K, thereafter, crack propagation was observed. The main results obtained are as follows. Stress fluctuations on stress - strain curves were observed for specimens with random oriented grains, whereas such behaviour rarely occurred for ones with textured grains. Difference in the ...

British Library Electronic Table of Contents (United Kingdom)

Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

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In this study polycrystalline specimens of as-cast DyCu with B2 crystal structure were compressed to different strains at room temperature to test if stress-induced phase transformation and twinning occur during deformation. In these tests DyCu exhibited high ductility with plastic strain as high as 35% and ultimate compressive strength of ~790MPa. X-ray diffraction and transmission electron microscopy (TEM) showed no indications that DyCu had undergone stress-induced phase transformation or twinning. -type dislocations have been observed to play an important role for imparting the ductile behavior. TEM analyses showed the presence of second phases, Dy2O3 and DyCu2 within the DyCu. The mechanisms of ductility and impurity phase formation are discussed.

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The Fe-based copper oxide Formula Not Shown exhibits superconductivity around 50K only when it is properly annealed in Formula Not Shown atmosphere and subsequently in Formula Not Shown atmosphere. In contract Formula Not Shown does not exhibit superconductivity even if it is annealed along the same process as Formula Not Shown . We have synthesized the polycrystalline samples of Formula Not Shown solid solution system Formula Not Shown to investigate the Nd substitution effects. DC magnetization measurements have shown that, the samples in a range of Formula Not Shown exhibit superconductivity and Formula Not Shown was reduced with increasing the Nd content. However, we could not observe the superconductivity for Formula Not Shown and 1. Rietveld refinement results revealed that due to th...

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Polycrystalline ZnO doped with Mn (5 and 10at%) was prepared by the co-precipitation method. The effect of Mn doping on the photocatalytic, antibacterial activities and the influence of doping concentration on structural, optical properties of nanoparticles were studied. Structural and optical properties of the particles elucidated that the Mn2+ ions have substituted the Zn2+ ions without changing the Wurtzite structure of ZnO. The optical spectra showed a blue shift in the absorbance spectrum with increasing dopant concentration. The photocatalytic activities of ZnO powders were evaluated by measuring the degradation of methylene blue (MB) in water under the UV region. It was found that undoped ZnO bleaches MB much faster than manganese doped ZnO upon its exposure to the U...

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Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.

International Nuclear Information System (INIS)

A survey is given on studies of the phonon spectra of several A-15 compounds by inelastic neutron scattering on polycrystalline samples. Comparison of the results for V_3Si, V_3Ge, N_3Ga, Nb_3Sn and Nb_3Al at 297 K lead to the conclusion that the interatomic forces are to a good approximation the same for all compounds with 4.75 valence electrons but are reduced by about 20% for those with 4.5 valence electrons. For all compounds investigated a softening of the phonon frequencies on cooling is observed which is most pronounced for those materials with the highest T/sub c/ values. From a comparison of the results with the experimentally determined Eliashberg function of Nb_3Sn information is derived about the energy dependence of the electron-phonon coupling function #alpha#"2.

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Grooving CVD diamond films using a focused ion beam (FIB) to quarry micro parts is described. The substrate-side surface of a polycrystalline diamond film which is prepared by means of microwave plasma CVD, is able to be grooved by a focused Ga ion beam scanned straight repeatedly. The groove has cross section whose shape is like an inverted Gaussian distribution curve. And the surface roughness of the films before grooved influences that of grooves. Under the same irradiation conditions, deeper, narrower, in short, high aspect ratio grooves are obtained on B-doped semiconducting microwave plasma CVD diamond films. Coating electrical conductive material is also effective method to obtain high aspect ratio grooves. It is supposed that these results are due to the degree of electrification on the surface and that FIB irradiation is a suitable method for micromachining semiconducting diamond films.

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Magnetic properties of polycrystalline samples of RPd_2Si compounds (R = Gd, Tb, Dy, Ho and Er) are presented. The Gd and Tb based compounds are antiferromagnetic with Neel temperatures of 13.5 and 21 K respectively. For both compounds a metamagnetic transition is observed in low field. Moreover, in TbPd_2Si a transition between two different antiferromagnetic phases is observed at 8.5 K. The Dy, Ho and Er based compounds are ferromagnetic with Curie temperatures of 9, 3.5 ad 2.8 K respectively. The observed properties result from indirect exchange interactions and crystal field effects acting on rare earth ions which lie in a very low symmetry site. (author).

International Nuclear Information System (INIS)

The magnetic and magnetostrictive properties of polycrystalline Co1-xMnxFe2O4 (0 ? x ? 0.4) have been studied. Although the Curie temperature decreases continuously with increasing concentration of Mn, the magnetization remains high up to x = 0.3 and unexpectedly low coercivity is observed for this composition showing an unusual magnetostrictive behaviour. This composition shows a relatively larger magnetostriction at low fields. Moreover, the strain derivative which is the slope of the magnetostriction curve at low magnetic fields is almost doubled and the field at which maximum magnetostriction is observed is reduced to almost half for 30% of Mn substitution. The results show that x ? 0.3 in Co1-xMnxFe2O4 is an optimum composition with superior magnetostrictive properties for many applications.

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We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.

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Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

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Single crystals of ytterbium tartrate trihydrate have been grown by gel method using silica and agar-agar gels as media of growth. The medium of growth influences the morphology of grown crystals, silica gel yielding single and polycrystalline in the form of spherulites whereas agar-agar gel leading to growth of single and twinned crystals. Materials grown as single crystals have been characterized by using optical and scanning electron microscopy (SEM), EDAX, XRD, FT-IR, CHN and thermogravimetric techniques. The stoichiometry of the grown single crystals is suggested to be Yb(C4H4O6) (C4H5O6).3H2O. The FT-IR spectrum shows the presence of singly as well as doubly ionized tartrate ligands. Results of thermal analysis indicate that the material is thermally stable up to a temperature of 200...

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Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

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Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.

Science.gov (United States)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.

International Nuclear Information System (INIS)

The authors present an investigation of structural changes occurring in bilayer stacks with crystalline columnar growth when one of the layers is substituted by layers known to grow amorphous. In Co/Cu multilayers the Co layers were substituted by CoZr layers of varying Zr content and layer thickness. Structural characterization was performed by transmission electron microscopy (TEM). They show that the amorphization of the CoZr layers leading to a destruction of the columnar growth depends both on the Zr content and on the thickness of the CoZr layers. Additionally a change to textured growth with a normal to the substrate occurs with increasing Zr content. They explain their observations by a simple picture based on the hard sphere model.

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This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL`s in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy`s National Photovoltaic Research Program plans.

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Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until their complete ...

International Nuclear Information System (INIS)

The corrosion and passivation behaviour of bulk polycrystalline martensite Ni50Mn30Ga20 and austenite Ni48Mn30Ga22 alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly alkaline solutions (pH 5-11) both alloys exhibit a low ...

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The paper reported the results of fiscal 1994 studies on solar energy in the New Sunshine Project. Relating to the technical development for the practical use of photovoltaic power systems, the development of manufacturing technologies for low-cost substrates and the development of element technology for manufacturing low-cost polycrystalline cells/modules were reported as the development of technology for thin substrate polycrystalline solar cells for practical use. As to the research on fabrication technology for thin film solar cells for practical use, reports were made on the research on low-cost fabrication technology for large-area modules and the technological development for qualitative improvement, etc. In respect to the technological development for super-high efficiency solar cells, reported were the technological development for super-high efficiency single crystalline silicon solar cells and the technological development for ...

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

International Nuclear Information System (INIS)

Praseodymium-doped Bi_4Ti_3O_1_2 (BIT) with various compositions of dopant, Pr (x = 0.5, 0.6, 0.7, 0.8) in Bi_4_-_xPr_xTi_3O_1_2 (BPT) were synthesized using a low temperature wet chemical technique. Powders calcined at 800 deg. C exhibit a single phase polycrystalline perovskite bismuth-layered structure. Randomly oriented plate-like structures were observed under Scanning Electron Microscope (SEM). A small amount of Pr doping (x = 0.5) resulted in dramatically reduced of grain size from 2 #mu#m to less than 50 nm in which Pr plays the role as a grain growth inhibitor. However, by increasing the composition of Pr, bigger grain size of up to 1 #mu#m was observed for x = 0.8 that was caused by diffusion of Pr in the perovskite structure. Dielectric properties showed that dielectric permittivity decreased with the addition of x = 0.50, and increasing with further addition of Pr. Dissipation factor (tan #delta#) followed the same trend as dielectric constant that was ...

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of T/sub 1/ spin-lattice relaxation time on /sup 51/V, /sup 69/Ga, /sup 71/Ga and Knight shift on /sup 51/V and /sup 29/Si nuclei in polycrystalline V/sub 3/Si, V/sub 3/Ga, V/sub 3/Ge and in the monocrystal V/sub 3/Si in normal state is investigated. For V/sub 3/Si and V/sub 3/Ga a rapid growth (T/sub 1/T)/sup -1/ is observed with temperature decrease while for V/sub 3/Ge the maximum (T/sub 1/T)/sup -1/ at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T/sub 1/ anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T/sub 1/T)/sup -1/ and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V/sub 3/Si from T/sub 1/ measurements.

Energy Technology Data Exchange (ETDEWEB)

Superplasticity of polycrystalline metallic materials is a phenomenon which shows hundreds to thousands of percents of large plastic deformation without necking in a steady state of low stress, when the uni-axial tensile loading is done in some special thermo-mechanical conditions (some limited ranges of properly high temperature and low strain rate). The main mechanism of superplastic phenomenon is the grain boundary sliding, while the main mechanism of usual plastic deformation is the trans-granular sliding. In this research, the possibility of superplastic deformation in a magnesium alloy (AZ31Mg alloy) was experimentally investigated, because generally speaking, the magnesium alloy whose atomic structure is hexagonal does not have enough formability in a form of trans-granular sliding mechanism. In this paper, the detail of experimental results are shown and discussed. Moreover, the constitutive equations of Mg alloy are proposed on the basis of the ...

British Library Electronic Table of Contents (United Kingdom)

The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...

International Nuclear Information System (INIS)

Optically stimulated luminescence (OSL) and thermoluminescence are observed in polycrystalline RbMgF3:Eu2+ after x-ray, ?-ray, or ? irradiation. The main electron traps are F-centers but there are other unidentified traps. The main hole traps at room temperature are probably Eu3+ and thermal or optical stimulation leads to electron-hole recombination at the Eu3+ site and Eu2+ emissions arising from 6PJ to 8S7/2 and 4f5d(Eg) to 8S7/2 transitions. We find that some of the electron traps can be emptied by infrared stimulation and all of the electron traps can be emptied by white light stimulation. The OSL dark decay is long and exceeds 5 days for traps that are emptied by white light stimulation after initial infrared bleaching. Our results show that this compound can be used as a radiation dosimeter for intermediate dose levels where the 87Rb self-dose does not significantly affect the dose reading.

International Nuclear Information System (INIS)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve fitting represents the time accumulation during the process. The neutralization of ...

International Nuclear Information System (INIS)

Measurements of the Kapitza conductance to liquid helium II across the (100) surface of single crystals of copper are presented. The temperature range of these measurements was 1.6-- 2.1 K. The sample surfaces were subjected to several different treatments. Some surfaces were cleaned by low-energy argon ion bombardment, annealed in an ultrahigh-vacuum system, and preserved under vacuum until purified liquid helium was admitted. Other surfaces were intentionally damaged by machining and/or exposure to the atmosphere. The conductance after these latter treatments was found to be about a factor of three higher than that of the more ideally cleaned and annealed surfaces, and a significant difference in the temperature dependence of the conductance was also observed. Conductances were reproducible for similarly treated surfaces and correlated with surface damage determined by x-ray diffraction. The relationship of these results to the numerous current theories of the Kapitza conductance is ...

Energy Technology Data Exchange (ETDEWEB)

Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the materials produced higher values for the rougher evaporation-formed interfaces consistent with ...

Energy Technology Data Exchange (ETDEWEB)

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was ...

International Nuclear Information System (INIS)

Structural variations in 39-MeV alpha-particle irradiated (Tsub(irr) = 60 deg C) polycrystalline molybdenum during post-irradiation annealing were studied by X-ray and TEM methods. Despite the high density of irradiation induced defects in the structure of the specimen X-ray measurements showed zero relative lattice parameter change after an irradiation dose of 1.1 x 10"-_2 dpa. However, during the annealing #delta#a/a was changed in the positive range, exhibiting two peaks - at 100 and 300 deg C - whereas the damage structure detected by TEM indicated no changes. Analysis of the results leads to the conclusion that in the range 100 to 250 deg C migration of isolated vacancies and their annihilation at interstitial clusters as well as possible formation of new vacancy clusters occur. The second peak on the #delta#a/a temperature dependence curve is related to the transformation (probably, thermal disintegration) of vacancy clusters formed at energetic displacement ...

Energy Technology Data Exchange (ETDEWEB)

The properties of polycrystalline (Ti, Al)N coatings deposited on non-nitrided, classically plasma-nitrided and low pressure plasma-nitrided AISI H11 steel samples were investigated. The plasma deposition and low pressure plasma nitriding were performed in a Z700-LH magnetron sputter ion plating unit, while a separate unit was used for plasma nitriding of specimens at a pressure of several millibars. The (Ti, Al)N coating was deposited onto all the samples using the same equipment as for the plasma deposition and low pressure plasma nitriding. For the characterization of the composite structures, the following methods were used: scratch test, X-ray diffraction analysis, scanning electron microscopy, scanning tunnelling microscopy and microhardness testing. It was found that plasma nitriding prior to coating deposition strongly affects the growth and properties of hard coatings, such as the microhardness, adhesion, preferred orientation, structure and morphology. ...

Energy Technology Data Exchange (ETDEWEB)

This work has been undertaken with a view to study the effect of lanthanum content on properties of PLZT ceramics. The polycrystalline complex compounds of PLZT with Pb{sub 1-x}La{sub x}(Zr{sub 0.40}Ti{sub 0.60}){sub 1-x/4}O{sub 3}, +10% PbO formula were prepared from the nano-size individual oxides powders by hot-pressed process. Transparent PLZT (x/40/60) bulk ceramics with pure tetragonal phase was obtained. The studies of the microstructures, dielectric and ferroelectric properties of the ceramics were carried out. The experiment results showed that when La content increased from 7 to 13 mol.%, the grain size increased from 2 to 7 {mu}m. La content also effects the dielectric property obviously, the dielectric constant increased with La content increasing. Moreover, the ferroelectric properties are sensitive to the variation of La content.

Energy Technology Data Exchange (ETDEWEB)

Deformation mechanisms of Mg-Al-Zn (AZ31) alloys were investigated by performing tensile test at room temperature. In fine grain Mg alloys deformed at room temperature, nonbasal slip systems were found to be active as well as basal slip systems because of grain-boundary compatibility effect. Slip-induced grain-boundary sliding occurred as a complementary deformation mechanism to give rise to c-axis component of strain. With increasing grain size, the activation of the nonbasal slip systems was limited near grain boundaries. Instead of grain-boundary sliding, twinning occurred as a complementary deformation mechanism in large grained samples. Orientation analysis of twins indicated that twinning is induced by stress concentration due to the pile up of basal dislocations. The grain-size dependence on deformation mechanism was found to affect yielding behavior both microscopically and macroscopically which can influence various mechanical properties such as fatigue and creep. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Theoretical work supported by this grant has lead to the concept of the specific pinning force Q and the development of new methods to sum elementary interaction forces to find Q. Pinning due to changes in transition temperature or thermodynamic critical field in thin layers (e.g., a grain boundary), is greatly reduced due to the proximity effect and the stress field interaction due to the dislocations in the grain boundary has been shown to be negligible. The crystalline anisotropy (CA) and electron scattering (ES) interactions have been computed for the first time for an arbitrary boundary. Experiments on niobium bicrystals, polycrystalline niobium thin foils doped with oxygen, lead-bismuth alloy thin films and lead-bismuth alloy films in which either lead or thallium has been allowed to diffuse down the grain boundaries and out into the grains provide evidence that confirms the predictions of the theory. These results suggest that further improvements in grain ...

Science.gov (United States)

Polycrystalline powders of Na{sub 2x}Mn{sub 1-x}PS{sub 3} have been synthesized from layered MnPS{sub 3} material by successive ion-exchange intercalation of potassium and sodium ions. Their x-ray photoelectron spectroscopy (XPS) and x-ray excited Auger spectroscopy spectra have been measured at room temperature using Mg K{alpha} (1253.6 eV) x-ray source. In particular, the Mn, P, and S 2p and Na 1s and 2p core-level regions and the Na Auger KL{sub 23}L{sub 23} transition have been investigated. All the analyzed XPS core-level spectra display a single-peak structure, suggesting the absence of nonequivalent atoms of Na, Mn, P, and S. The manganese XPS spectrum shows, as observed in MnPS{sub 3} and in its cesium and potassium intercalation compounds, typical shake-up satellites, suggesting that the Mn-S bond is yet mainly ionic in nature. The comparison with the XPS spectra relative to MnPS{sub 3} and its potassium intercalation compound (K{sub 2x}Mn{sub 1-x}PS{sub ...

Science.gov (United States)

Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub 3} and possible volatile P{sub 2}O{sub 5} diffusing out of the specimen. Thus, from ...

International Nuclear Information System (INIS)

The polycrystalline samples of Y_2_-_xHo_xO_3 (0.10#<=#x#<=#1.80) were synthesized by ceramic technology. The X-ray powder diffraction data were collected and the crystal structures were refined by the Rietveld method for the samples Y_2_-_xHo_xO_3 (x=0.00, 0.20, 0.40, 1.20, 1.80, 2.00). Holmium ions Ho"3"+ were randomly distributed over two cationic sites 8b and 24d in the space group Ia3 in all refined structures. Cation-anion-cation bonds important for superexchange interaction were determined. Magnetic susceptibility measurements were done by the Faraday method in the temperature range 290 to 620 K and a behaviour in accordance with the Curie-Weiss law was obtained. The molar Curie's constants linearly depend on concentration. The effective magnetic moments of Ho"3"+ ions were smaller than the free ion value. The Curie-Weiss paramagnetic temperatures indicated antiferromagnetic interaction. The gram ion susceptibilities confirmed the random distribution ...

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess of 700[degrees]C within seconds of ...

Energy Technology Data Exchange (ETDEWEB)

Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled buffer at the interface. Significant relaxation of the film stress has been observed for the buffer layer ...

International Nuclear Information System (INIS)

Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, which is one of the candidate systems for future superconducting qubits, we observed ...

International Nuclear Information System (INIS)

?-Y(IO3)3 and ?-Y(IO3)3 are transparent until 12.8 and 13.4 ?m, respectively; thus they are interesting as a potential laser matrix in the mid- and beginning of the far-infrared. So, in order to investigate the properties of lanthanides- doped anhydrous yttrium iodate, polycrystalline samples of ?-Y1-xNdx(IO3)3 (0.01?x?0.05), ?-Y1-xNdx(IO3)3 (0.001?x?0.1), ?-Y1-xYbx(IO3)3 (0.01?x?0.33) and ?-Y1-xYbx(IO3)3 (0.01?x?0.25) were synthesized. For Nd3+ ions, fluorescent emissions from the 4F3/2 multiplet were observed at 300 K under pulsed laser excitations at 750 nm and for Yb3+, fluorescent emissions from the 2F5/2 multiplet were observed at 300 K under pulsed laser excitations at 980 nm. The decays of all these emissions were measured. They are exponential and the fluorescence lifetimes are in the range 0.093-0.193 ms for Nd3+ and 0.370-0.541 ms for Yb3+, depending on the nature of the host and the concentration of doping.

International Nuclear Information System (INIS)

Spectral room temperature photoluminescence (pl) of polycrystalline Cu(In,Ga)Se2 films (CIGSe) is evaluated with respect to optoelectronic properties and in particular for the determination of the splitting of quasi-Fermi levels (EFn - EFp). For lateral resolution of ? 1 ?m a confocal pl-setup is used. The depth profile of the excess carrier densities determining the rates of radiative transitions strongly govern the spectral pl-shape which has been numerically modeled with a matrix transfer formalism. In this optical approach we discriminate for wave propagation and attenuation in a multilayer system between a plane-wave ansatz and a 3D-spherical formalism, depending on excitation area large or small/similar compared to the thickness of the absorber. In both cases re-absorption of photons in energetic regimes with absorption approaches unity, from which the splitting of the quasi-Fermi levels is preferentially deduced, substantially influence the spectral ...

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He{sup +} ions at RT. By comparison with published results, it is concluded that ...

International Nuclear Information System (INIS)

Pale colored BiY_1_-_xR_xGeO_5 (R=rare-earth from Pr to Yb) polycrystalline samples exhibit a crystalline phase isostructural with the orthorhombic Pbca (No. 61) structure-type established for BiYGeO_5 and BiYbGeO_5. R occupies a single point site in the host, with the lowest C_1 symmetry. While for Pr and Nd x must be #<=#0.35, for smaller R ions, Sm to Yb, the phase appears for any x content. Detailed crystallographic data for BiErGeO_5 have been determined from the structure refinement of its neutron diffraction profile at room temperature. Optical absorption and photoluminescence measurements at 10 K have been performed for BiEuGeO_5. An initial approach to the parametrization of crystal-field effects on this new host has been provided by results of the semi-empirical Simple Overlap Model, which considers the crystallographic positions of the nearest neighbors around R. Furthermore, the strongly reduced "7F_J_M set of levels of the 4f"6 configuration has ...

International Nuclear Information System (INIS)

The crystal structure of borophosphates ABPO_5 (A = alkaline earth or Pb) was resolved on a polycrystalline sample using the Rietveld method. The x-ray diffraction patterns data show that ABPO_5 crystallize in a centrosymmetric space group P3_121 and their structure is related to the borogermanates REBGeO_5 with a stillwellite-type structure. Pr"3"+ ion was used as a local structural probe to corroborate the structural resolution results. Absorption and fluorescence spectra of A_1_-_xPr_xBP_1_-_xGe_xO_5 (A alkaline earth or Pb; x = 0.05) have been investigated at different temperatures. At 9 K the 3"H_4#->#"3P_0 transition of trivalent praseodymium ion (4f"2 configuration) is observed as a single line. This indicates a unique crystallographic site for the rare earth ion in these compounds replacing the divalent cation. Energy level schemes were deduced from the low-temperature spectroscopic measurements. Comparing the electronic level splittings of studied ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in small increments and the concentration of ...

Energy Technology Data Exchange (ETDEWEB)

Bremstrahlung Isochromat Spectroscopy (BIS). The XES spectra were collected using a Specs electron gun for the excitation and the XES 350 grating monochromator and channel plate system from Scienta as the photon detection. Spectra were collected in 'normal mode,' where the electron gun kinetic energy (KE) and the energy position of the center of the channel plate were both fixed and the energy distribution in the photon (hv) spectrum was derived from the intensities distributed across the channel plate detector in the energy dispersal direction. The polycrystalline Ce sample was oxidized by exposure to air at ambient pressures. After introduction to the ultra-high vacuum system, the oxidized sample was bombarded with Ar, to clean the topmost surface region and stabilize the surface and near surface regions. Although CeO{sub 2} would be the thermodynamically preferred composition in an oxygen rich environment, the combination of a vacuum ...