Energy Technology Data Exchange (ETDEWEB)

The paper reported the results of fiscal 1994 studies on solar energy in the New Sunshine Project. Relating to the technical development for the practical use of photovoltaic power systems, the development of manufacturing technologies for low-cost substrates and the development of element technology for manufacturing low-cost polycrystalline cells/modules were reported as the development of technology for thin substrate polycrystalline solar cells for practical use. As to the research on fabrication technology for thin film solar cells for practical use, reports were made on the research on low-cost fabrication technology for large-area modules and the technological development for qualitative improvement, etc. In respect to the technological development for super-high efficiency solar cells, reported were the technological development for super-high efficiency single crystalline silicon solar cells and the technological development for crystalline compound solar ...

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

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A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Science.gov (United States)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

Science.gov (United States)

Not Available

International Nuclear Information System (INIS)

... defects doped materials germanium infrared radiation monocrystals neutron

Energy Technology Data Exchange (ETDEWEB)

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

At COP3 in 1997, an agreement was made to the innovative technical development/promotion by international cooperation, and the promotion of transfer of environmental technology to developing countries. Under the agreement, a feasibility study of international cooperation was made, and especially a study was conducted of the utilization/development of solar energy by the innovative solar thermochemical process. The main reason for global warming is emissions of a large amount of CO2 caused by the direct combustion of fossil fuels. Therefore, a CO2 recycle system taken up in the study enables a more substantial decline in CO2 emission (kg/kWh) per unit generation than the conventional thermal power system by composing solar methanol or solar dimethyl ether using fossil fuels including coal, water, CO2, etc. as raw materials and using solar energy as heat source, and by using this as fuel (solar fuel). CO2 can be reduced by 13% to 14% by substituting solar methanol or solar dimethyl ether ...

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

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Short communication.

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

International Nuclear Information System (INIS)

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

CERN Document Server

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

Science.gov (United States)

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

Energy Technology Data Exchange (ETDEWEB)

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

International Nuclear Information System (INIS)

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

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Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

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A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

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In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

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We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

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A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

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We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

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Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

Energy Technology Data Exchange (ETDEWEB)

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

Energy Technology Data Exchange (ETDEWEB)

Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

International Nuclear Information System (INIS)

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

Energy Technology Data Exchange (ETDEWEB)

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

Energy Technology Data Exchange (ETDEWEB)

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

International Nuclear Information System (INIS)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

International Nuclear Information System (INIS)

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

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An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

UK PubMed Central (United Kingdom)

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

Science.gov (United States)

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Energy Technology Data Exchange (ETDEWEB)

A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.

British Library Electronic Table of Contents (United Kingdom)

Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

Energy Technology Data Exchange (ETDEWEB)

Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...

Science.gov (United States)

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...

Energy Technology Data Exchange (ETDEWEB)

Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...

International Nuclear Information System (INIS)

This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on ...

Energy Technology Data Exchange (ETDEWEB)

The investigated hybrid nanocomposite consists of a porous silicon template with electrochemically embedded Ni or Co nanostructures and offers magnetic characteristics which can be tailored by the electrochemical process parameters during fabrication. A twofold magnetic behaviour can be observed, a first one due to the spinmagnetism at magnetic fields below the saturation magnetization of the deposited metals and a second non-saturating term at higher fields (>1 T up to 7 T) above the saturation magnetization. In case of Ni deposited within the pores this non-saturating term shows a paramagnetic characteristic and follows exactly the Curie-Weiss law, whereas for Co/porous silicon samples the temperature dependent magnetization shows some deviations from the Curie Weiss law. In this high field region a difference in the temperature dependence between Ni and Co is observed whereas the non-saturating term does not depend on the geometry of ...

Science.gov (United States)

We present computer modeling along with experimental data on the formation of sharp conical tips on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 {mu}m layer of silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 {mu}m were irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in diameter. The computer simulation includes two-dimensional time-dependent heat transfer and phase transformations in Si films that result from the laser irradiation (the Stefan problem). After the laser pulse, the molten material self-cools and resolidifies, forming a sharp conical structure, the height of which can exceed 1 {mu}m depending on the irradiation conditions. We also performed computer simulations for experiments involving single-pulse irradiation of bulk silicon, reported by other groups. We discuss conditions under which different types ...

CERN Document Server

This document concerns the proposal to negotiate an amendment to an existing contract for the supply of thick 6 inch silicon micro-strip sensors for the CMS tracker. For the reasons explained in this document, the Finance Committee is invited to approve an amendment to an existing contract with HAMAMATSU PHOTONICS (CH) for the supply of 7 000 thick 6 inch silicon micro-strip sensors for the CMS tracker, for an amount of 3 248 000 euros (5 131 840 Swiss francs), not subject to revision, with an option for up to 11 000 additional sensors, for a maximum amount of 4 708 000 euros (7 438 640 Swiss francs), not subject to revision, bringing the total maximum amount of the amendment to 7 956 000 euros (12 570 480 Swiss francs) not subject to revision. This total maximum amount will be added to the initial contract amount of 415 835 000 Japanese yen (4 879 824 Swiss francs), not subject to revision. The amounts in Swiss francs have been calculated ...

Energy Technology Data Exchange (ETDEWEB)

Safety and environmental assessments have been made of conceptual fusion power plant designs employing silicon carbide composites (SiC/SiC) as the first wall and blanket structure material. These have used similar analysis methods to earlier studies of designs based on vanadium alloy or low-activation martensitic steel, allowing direct comparisons. The very low short-term activation of silicon carbide results in an almost insignificant level of decay heat in postulated loss of coolant accidents, and a lower {gamma}-dose rate on the timescale of relevance to handling for maintenance operations. However on the longer time-scale, of interest in possible recycling operations, decommissioning and waste management, SiC/SiC appears to perform no better than vanadium alloy or low-activation martensitic steel, due in part to the activation of impurities in a realistic composition. Furthermore, its increased neutron transparency may result in higher ...

International Nuclear Information System (INIS)

High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients as a function of concentration. Diffusion ...

International Nuclear Information System (INIS)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.

CERN Document Server

Micron scale silicon nitride (SiNx) microdisk optical resonators fabricated on a silicon wafer are demonstrated with Q = 3.6 x 10^6 (finesse = 5 x 10^4) and an effective mode volume of 15 (\\lambda / n)^3 at wavelengths \\lambda ~ 852 nm resonant with the D2 transition manifold of cesium. A dilute hydrofluoric wet etch is shown to provide sensitive tuning of the microdisk optical resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the SiNx microdisk cavities while allowing unfettered optical access for laser cooling and trapping of atoms. Initial measurement of a hybrid atom-cavity chip indicates that cesium adsorption on the surface of the SiNx microdisks results in significant red-detuning of the disk resonances. A technique for parallel integration of multiple (10) microdisks with a single optical fiber taper is also demonstrated.

Energy Technology Data Exchange (ETDEWEB)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but ...

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that ...

Energy Technology Data Exchange (ETDEWEB)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...

Energy Technology Data Exchange (ETDEWEB)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

Energy Technology Data Exchange (ETDEWEB)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter extractions have ...

International Nuclear Information System (INIS)

2-hydroxyethyl methacrylate (HEMA) has been deposited onto the surface of silicon substrate (thickness = 500 ?m) using plasma polymerization technique. Polymerization process was carried out in an in-house developed inductively coupled plasma polymerization setup. The depositions were carried out using RF power supply (13.56 MHz) at power of 75 W for 10 and 40 min. The RF supply was coupled to the inductance through a matching network. The effect of plasma polymerization (surface grafting) on the degree of surface modification has been investigated. The chemical changes on the polymer backbone are followed from the results of Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), which show the peaks corresponding to the functional groups of the HEMA polymerized onto the silicon surface. The morphology of the modified surfaces has also been investigated using scanning electron microscopy (SEM) and atomic ...

Energy Technology Data Exchange (ETDEWEB)

In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the ...

International Nuclear Information System (INIS)

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection ...

International Nuclear Information System (INIS)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach ...

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

Energy Technology Data Exchange (ETDEWEB)

On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.

British Library Electronic Table of Contents (United Kingdom)

Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...

International Nuclear Information System (INIS)

The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.

British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

International Nuclear Information System (INIS)

The use of Sialon ceramics has been restricted by the high temperature required for synthesis and the expense of the pure oxide and nitride raw materials required. For refractory applications the purity required is less demanding and it has been possible to exploit the outstanding durability of the Sialons at moderate cost. New low cost manufacturing routes are being developed by nitriding silicon metal powder at relatively low temperature with clay and various additives depending on the Sialon required. For example the introduction of carbon or fine silicon carbide allows the preparation of beta Sialons and alpha Sialons which can be stabilised by including the appropriate cations. A wide range of composite Sialon bodies with diverse properties can be prepared by a one step process. Current projects developing the synthesis routes are aimed, in the first instance, at refractory manufacture but are showing promise for more sophisticated ...

Energy Technology Data Exchange (ETDEWEB)

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

British Library Electronic Table of Contents (United Kingdom)

Rapid nitridation was used to fabricate reaction-bonded and postsintered -Si6-ZAlZOZN8-Z (Z=1) ceramics with monoclinic ZrO2 added to the starting powder. Thermo-gravimetric analysis revealed that the addition of ZrO2 reduced the starting temperature of the main nitridation reaction. Using a reaction-bonding route with heating rates of 5, 10, and 20C/min, to fabricate -SiAlON ceramics without ZrO2 resulted in unreacted silicon that bled out of the specimens and the Z=1 composition samples did not maintain the original green compact morphology. On the other hand, no such bleeding of melted silicon was observed for samples with ZrO2 additions and the samples following nitridation maintained the original green morphology. The microstructure and mechanical properties of samples produced by rap...

Energy Technology Data Exchange (ETDEWEB)

During the recrystallization by solid-phase-expitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +/- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, it is proposed that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing. 12 references, 6 figures.

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

Energy Technology Data Exchange (ETDEWEB)

In 1976 the design and fabrication began of an 1 MWt Bench Model Solar Receiver (BMSR) to demonstrate and further develop the ceramic tube central receiver concept. Although many of the properties of silicon carbide are well documented, this material has never been utilized in an application of this type and size. Further investigation was undertaken to confirm the choice of silicon carbide against available metals and other ceramic materials. The BMSR is configured for testing at the Department of Energy's Central Receiver Test Facility in Albuquerque, New Mexico. Design and fabrication of the BMSR are highlighted in this report. Completion and testing of the BMSR are planned for the next phase of the project.

International Nuclear Information System (INIS)

A survey is presented of the principles and practice of tailoring sintering liquid composition and processing cycle to enable crystallisation of intergranular phases in silicon nitride and sialon ceramics. Critical features in sialon ceramics are the O/N balance in residual glasses and post-sintering heat-treatment temperatures to enable nucleation of either intermediate phases at constant composition or oxide phases with re-partitioning of non stoichiometric components in #beta#' or #alpha#' solid solutions. Crystallisation of disilicate phases in non-sialon compositions exemplifies a problem in control of polymorphs with differing atomic volumes. Crystallisation of intergranular phases has an influence mainly on high-temperature mechanical and environmental behaviour of these ceramics. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)

International Nuclear Information System (INIS)

We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

Energy Technology Data Exchange (ETDEWEB)

Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)

British Library Electronic Table of Contents (United Kingdom)

A 21-year-old woman developed midesophageal stricture two weeks after ingestion of aluminium phosphide (AlP) tablets. Aluminium phosphide is a lethal protoplasmic toxin and is also the most common cause of suicidal poisoning in northern India. Upper gastrointestinal endoscopy (UGIE) showed a tight esophageal stricture 29?cm from the incisors with a circumferential ulcer. Dilatation up to 17?mm was done using Savary-Gilliard dilators. She had repeated dilatations three times at nearly two-week intervals. In view of the resistant stricture, a silicone Polyflex stent was placed across the stricture and removed after 3?months; there was no recurrence of stricture even after three months of follow-up. Patients with recurrent esophageal stricture and those with fistula may benefit from silicone ...

Energy Technology Data Exchange (ETDEWEB)

Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

Science.gov (United States)

A radioactive particle was analyzed to discover the composition of the inactive material of the particle. The method uses the x-ray line spectrum of the K series caused by electron irradiation of the particle in the electron microscope. Iron and aluminum or silicon (the last two could not be distinguished) were found as inactive components in the particle. (D.L.C.)

Energy Technology Data Exchange (ETDEWEB)

The pyrometallurgic method consisting in introduction of refining agent into the liquid cadmium has been presented. The refining agent consisting of silicon nitride, carbon dust and sodium hydroxide has been added in several portion into the liquid cadmium. Iron has been removed from the cadmium surface in the form of floating slag.

Energy Technology Data Exchange (ETDEWEB)

This book presents papers on internal combustion engines. Topics considered include the influence of partial suppression of heat rejection on performance and emissions, duothermic combustion, turbochargers made of sintered silicon nitrides, heat flux, low heat rejection engines, exhaust energy recovery, combustion chamber insulation, computerized simulation, heat transfer, friction, hoop stress effects, and bonding ceramics and metals.

International Nuclear Information System (INIS)

By the methods of the angular distribution of photon annihilation, time distribution of photon annihilation, photoluminescence spectroscopy, Fourier IR-spectroscopy, atomic force microscopy the detail information on relation of the structural and physical properties of the porous nano-structures is obtained. Study of pores sizes in a different nano-porous materials, such as the porous silicon, porous anode aluminium oxide, porous solids exposed to light atoms ion implantation (hydrogen, deuterium, helium) is carried out.

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

International Nuclear Information System (INIS)

An internuclear cascade-evaporation code is used to model energy deposition in thin slabs of silicon. This model shows that protons produce a significant number of events with effective Linear Energy Transfer (LET) greater than 8 MeV cm"2/mg and demonstrates that proton testing of microelectronic components can be an effective way to screen devices for low earth orbit susceptibility to heavy ions.

International Nuclear Information System (INIS)

We describe the continued development of a portable, real-time neutron spectrometer. The spectrometer is composed of two distinct detector systems: a Helium 3 gas filled proportional counter for the lower neutron energy interval between 20 KeV and 2 MeV and a bulk silicon solid state detector for the higher energy interval between 2 MeV and 500 MeV. Modeling and experimental results with mono-energetic neutron beams are reported.

Energy Technology Data Exchange (ETDEWEB)

Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until ...

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to ...

Energy Technology Data Exchange (ETDEWEB)

This report discusses the following topics: Prompt fission neutron energy spectra for {sup 235}U and {sup 239}Pu; Two-parameter measurement of nuclear lifetimes; ``Black`` neutron detector; Data reduction techniques for neutron scattering experiments; Inelastic neutron scattering studies in {sup 197}Au; Elastic and inelastic scattering studies in {sup 239}Pu; and neutron induced defects in silicon dioxide MOS structures.

British Library Electronic Table of Contents (United Kingdom)

Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (DV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.

International Nuclear Information System (INIS)

Auger-electron emission from different silicides has been studied for 4 and 10 keV Ar ion excitation. The intensity of the SiLMM Auger line changes significantly with channing concentration and atomic number of the metal-parthner. The experimental results can be explained in terms of a simple model based on the probability of Si-Si collision symmetric cascade in these binary compounds.

International Nuclear Information System (INIS)

Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs.

Energy Technology Data Exchange (ETDEWEB)

An advanced ceramic dome cavity receiver is discussed which heats pressurized gas to temperatures above 1800/sup 0/F (1000/sup 0/C) for use in solar Brayton power systems of the dispersed receiver/dish or central receiver type. Optical, heat transfer, structural, and ceramic material design aspects of the receiver are reported and the development and experimental demonstration of a high-temperature seal between the pressurized gas and the high-temperature silicon carbide dome material is described.

Energy Technology Data Exchange (ETDEWEB)

The fragment separator at GSI, Darmstadt, has been used to produce and separate very proton rich nuclei in the {sup 100}Sn region. By fragmentation of a {sup 112}Sn beam at 1 A{center_dot}GeV we produced nuclei along the rp-process path between {sup 77}Y and {sup 98}In. By implanting these ions into a silicon detector stack we were able to determine their halflives. Preliminary data are presented.

International Nuclear Information System (INIS)

The purpose of this study was to reveal the mechanism of wafer touch polishing using a high purity colloidal silica slurry containing organic surfactants such as hydroxyl-ethyl cellulose. The effect of the surfactant concentration on wafer touch polishing was studied to improve the roughness of wafer surfaces after polishing. The haze level and the micro-roughness decreased with decreasing surfactant concentration.

Energy Technology Data Exchange (ETDEWEB)

The current work continues a project completed in 1999 by ReMaxCo Technologies in which a novel, microwave based, VLS Silicon Carbide Fibrils concept was verified. This project continues the process development of a pilot scale commercial reactor. Success will lead to sufficient quantities of fibrils to expand work by ORNL and others on heat exchanger tube development. A semicontinuous, microwave heated, vacuum reactor was designed, fabricated and tested in these experiments. Cylindrical aluminum oxide reaction boats are coated, on the inner surface, with a catalyst and placed into the reactor under a light vacuum. A series of reaction boats are then moved, one at a time, through the reactor. Each boat is first preheated with resistance heaters to 850 C to 900 C. Each reaction boat is then moved, in turn, to the microwave heated section. The catalyst is heated to the required temperature of 1200 C to 1300 C while a mixture of MTS (methyl trichlorosilane) and ...

International Nuclear Information System (INIS)

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure types of different bar width and density ...

Energy Technology Data Exchange (ETDEWEB)

The development and experimental demonstration of a high-temperature seal for the SHARE ceramic dome cavity receiver is reported. The mechanical contact seal which was tested on one-foot-diameter silicon-carbide ceramic-dome hardware at pressure differentials to four atmospheres and dome temperatures to 2200/sup 0/F (1200/sup 0/C) showed negligible leakage at expected receiver operating conditions. Potential solar receiver applications for the technology are illustrated.

Energy Technology Data Exchange (ETDEWEB)

The authors present design methodology and initial experimental results for a high power microwave switch. The switch is designed for application to the pulse compression system associated with the Next Linear Collider Test Accelerator (NLCTA). The switch is based on the excitation of a plasma layer within a silicon wafer by either a laser or an electron beam. They investigate problems associated with high power operation of such a switch. They explore solutions to the problems of thermal runaway, avalanche breakdown, photo-emission, and secondary emission.

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction at the Pd/SiC ...

Energy Technology Data Exchange (ETDEWEB)

The effect of interfacial structure on the mechanical properties of aluminum-ceramic composite materials fabricated by liquid phase sintering was studied. The composites were based on two matrix alloys (powder metallurgy alloys 201 and 601) reinforced with either Al{sub 2}O{sub 3} or SiC particulate. Characterization of the interfacial regions demonstrated that the SiC-matrix interfaces were faceted whereas the Al{sub 2}O{sub 3}-matrix interfaces had an incomplete layer of a silicon-rich amorphous phase. Preferential attack of the particles during sintering is believed to cause the crystallographic facets to form on SiC. Locally high silicon concentrations near Al{sub 2}O{sub 3} particles led to the formation of a glassy phase from the reduction of Al{sub 2}O{sub 3}. The difference in interfacial structure resulted in a higher particle-matrix bond strength and therefore improved composite mechanical properties in the SiC-reinforced materials ...

International Nuclear Information System (INIS)

Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g"-"1 and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly.

Energy Technology Data Exchange (ETDEWEB)

The cooperative project was a joint development program between Ceradyne and Oak Ridge National Laboratory through Lockheed Martin Energy Research (LMER). Cooperative work was of benefit to both parties. ORNL was able to assess the effect of the microwave nitridation process coupled with gas-pressure sintering for fabrication of parts for advanced diesel engines. Ceradyne gained access to gelcasting expertise and microwave facilities and experience for the nitridation of SRBSN materials. The broad objective of the CRADA between Ceradyne and OIWL was to (1) examine the applicability of the gelcasting technology to fabricate parts from SRBSN, and (2) to assess the effect of the microwave nitridation of silicon process coupled with gas-pressure sintering for fabrication of parts for advanced diesel engines. The following conclusions can be made from the work performed under the CRADA: (1) Gelcasting is a viable method to fabricate SRBSN parts using Ceradyne Si ...

Energy Technology Data Exchange (ETDEWEB)

Aiming to realize ball bearings operable in a vacuum and under high temperature, silicon nitride (Si3N4) ceramic ball bearings were tested. The tested ball bearings were angular contact ball bearings composed of silicon nitride with sputtered molybdenum disulfide coating using a retainer of hot-pressed self-lubricating composite material. The time variation of the frictional torque was examined for the operations under the conditions at 500{degree}C in a vacuum at a rotational speed of 600 rpm and 50N thrust load for 5{times}10{sup 7}revolutions (1400 hours) and for 1.5{times}10{sup 8}revolutions (4200 hours). Excellent tribological performance was obtained. The ball bearings are lubricated with the molybdenum disulfide film at the initial stage of the operation and with a transfer film formed from the retainer material to the balls. In a test at 650{degree}C, low and stable frictional torque was observed up to 500 hours of operation as of the ...

Energy Technology Data Exchange (ETDEWEB)

We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low energy (ULE) B implanted Si during annealing. Defect dissolution occurs earlier and at smaller sizes in the ...

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results are discussed in comparison with their ...

International Nuclear Information System (INIS)

Buried silicon carbide (SiC) microstructures with lateral dimensions in the #mu#m range were formed by high-dose projection of 1.5 MeV C"2"+ ions in Si(100) at different doses and temperatures and subsequent annealing for 10 h at 1250 deg. C. Sections of individual SiC microstructures were prepared for cross-sectional transmission electron microscopy (TEM) analysis using a focused ion beam (FIB). Besides the possibility to select an individual microstructure, the FIB technique has the advantage of producing specimen foils of uniform thickness. Therefore, it was possible to map the carbon concentration of microstructures by energy filtered TEM (EFTEM) using the C_K absorption edge without the need of any sample thickness correction. Local overstoichiometric (>50%) carbon concentrations are shown to be correlated to the formation of an amorphous phase in the SiC and to significant swelling visible at the Si wafer surface 2 #mu#m above.

Energy Technology Data Exchange (ETDEWEB)

Laser-assisted processing techniques for producing high-quality solar cell metallization patterns are being investigated, developed, and characterized. A literature search was carried out on the various state-of-the-art laser-assisted techniques for metal deposition, including laser chemical vapor deposition and laser photolysis of organometallics, as well as laser-enhanced electroplating. The results of the literature survey are briefly summarized. Experiments were carried out on laser-enhanced electroplating. Deposition of metals by laser-assisted pyrolysis of a variety of metallo-organic inks and metal-bearing polymer solutions spun as films onto silicon wafers was carried out. A detailed study of the various models of localized surface temperature rise in silicon due to laser heating has been carried out. Progress is reported in fabricating laser-metallized solar cells with improved efficiencies. Cells fabricated are characterized. A ...

International Nuclear Information System (INIS)

Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for transient-enhanced diffusion of B at high ...

CERN Document Server

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray fluorescence (SR-TXRF) ...

Energy Technology Data Exchange (ETDEWEB)

Ceramic antifriction bearings were introduced in excellent characterics and application. In main shaft use bearings of the machine tool, to be heightened in efficiency and accuracy by the heightening in speed, centrifugal load to the outer ring is not negligible to shorten the bearing in life. Also ball bearings with a contact angle are easily corroded by a very strong revolution slide due to the gyromoment. The use of such light weight material as silicon nitride's can design the lengthening in life. Also the utilization of high rigidity can prevent the inner ring from expanding by centrifugal force and enable the machining to be with a high accuracy. Ceramic rolling element is excellent also in backing resistant property and effective on the oily film cut. With heat resistant property, it maintains hardness even at high temperature. Such excellent characteristics being utilized, the fine ceramic antifriction bearing is used for the main shaft of machine ...

Energy Technology Data Exchange (ETDEWEB)

A simulation model for boron diffusion which takes into account the aggregation of the excess interstitials in clusters, and subsequently, the dissolution of these defects, is proposed. The interstitial supersaturation and generation rate are determined according to the classical theory of nucleation and growth of particles, in analogy with the precipitation of a new phase in heavily doped silicon. The clusters are considered as precipitates formed by interstitial Si atoms. The B diffusion is modelled on the basis of the dopant-interstitial pair diffusion mechanism. The clusters dissolution during annealing maintains nearly constant, for a long period, the interstitial supersaturation and the related enhancement of the boron diffusion. This gives a good account of the diffusion results over a large range of experimental conditions. Furthermore, this approach describes most of the behavior of the transient enhanced diffusion (TED), like the temperature dependence of ...

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the ...

Energy Technology Data Exchange (ETDEWEB)

The need for a hydrogen economy is driven by increasing fuel prices, depleting oil reserves and uncertainty over supplies, and concerns about global warming and environmental pollution. Alternative methods to portable energy sources such as fossil fuels are being developed that are more efficient and carbon-emission-neutral. A prospective method is to produce hydrogen as an energy carrier. This paper presented a study on the degradation of materials under conditions of the sulphur-iodine (SI) thermochemical cycle. The paper provided background information on the study and presented a schematic of the SI cycle. A literature review was presented along with materials selected, such as refractory metals, reactive metals, superalloys, glassy metals, ceramics, cermets, polymers, composites, and coatings. The experimental method was then described. A capsule method was developed to rapidly quantify the decomposition rate of the candidate materials under the target conditions of temperature, ...

Energy Technology Data Exchange (ETDEWEB)

The development of a silicon carbide (SiC) heat exchanger is a critical step in the development of the Externally-Fired Combined Cycle (EFCC) power system. SiC is the only material that provides the necessary combination of resistance to creep, thermal shock, and oxidation. While the SiC structure materials provide the thermomechanical and thermophysical properties needed for an efficient system, the mechanical properties of the SiC tubes are severely degraded through corrosion by the coal combustion products. To obtain the necessary service life of thousands of hours at temperature, a protective coating is needed that is stable with both the SiC tube and the coal combustion products, resists erosion from the particle laden gas stream, is thermal shock resistant, adheres to SiC during repeated thermal shocks (start-up, process upsets, shut-down), and allows the EFCC system to be cost competitive. This demanding set of technical performance and cost drivers was used ...

International Nuclear Information System (INIS)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration ...

International Nuclear Information System (INIS)

Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and #left brace#113#right brace# defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration decreases, the loss of Si interstitials through diffusion to the surface prevails, causing their dissolution. The presence of large and stable ...

CERN Document Server

A new measurement of the cosmic ray antiproton-to-proton flux ratio between 1 and 100 GeV is presented. The results were obtained with the PAMELA experiment, which was launched into low-earth orbit on-board the Resurs-DK1 satellite on June 15th 2006. PAMELA is equipped with a silicon-microstrip magnetic spectrometer and a silicon-tungsten imaging calorimeter and has been collecting data since July 2006. During 500 days of data collection a total of about 1000 antiprotons have been identified, including 100 above an energy of 20 GeV. The high-energy results are a ten-fold improvement in statistics with respect to all previously published data. The antiproton-to-proton flux ratio increases smoothly with energy up to about 10 GeV, in agreement with previous experiments, and then levels off. The data follow the trend expected from secondary production calculations and significantly constrain contributions from exotic sources, e.g. dark matter ...

Energy Technology Data Exchange (ETDEWEB)

A series of ball-on-disc wear and friction measurements were made for surfaces which have a chemical vapour deposition carbon silicon alloy layer on a carbon substrate (fine grain POCO graphite). Nitrogen ion irradiation was used to improve the wear resistance of the carbon alloy surface. For comparison, measurements were also taken for alumina against alumina. It was found that the lowest friction coefficient and lowest wear occurred for ion irradiated coated samples containing 4% Si in the alloy and that the performance was superior to that of alumina. ((orig.))

Energy Technology Data Exchange (ETDEWEB)

The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

Energy Technology Data Exchange (ETDEWEB)

As concern regarding global environmental problems such as the greenhouse effect and acid rain has increased, so too has the demand for commercially viable solar cells as a clean energy source. Interest in amorphous silicon (a-Si) solar cells has been particularly high, due to their low cost. Technological developments in the field of a-Si solar cells are discussed from the viewpoints of fabrication process, materials, and cell structures. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are mentioned

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

International Nuclear Information System (INIS)

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

British Library Electronic Table of Contents (United Kingdom)

Doped ultrafine silicon dioxide powder with a narrow particle size distribution was obtained by RF discharge-stimulated dichlorosilane (SiH2C) oxidation at a low pressure using isobutylene as the combustion inhibitor and chromium hexacarbonyl (Cr(CO)6) as the dopant. The formation and morphology of the ultrafine particles are governed by the parameters of the RF discharge and by the chemical mechanism of the combustion reaction yielding the aerosol. Submicron-sized filamentous carbon structures can be obtained by isobutylene decomposition under spark discharge conditions in the presence of a molybdenum metal catalyst.

Energy Technology Data Exchange (ETDEWEB)

It is built and tested a transition radiation detector (TRD) to discriminate positrons from protons in the balloon flight TS 93 experiment. It is presented the TRD performance using flight data obtaining a proton-positron rejection factor of the order of 10{sup -3}. During the 24 hour flight, the data in the momentum range 4-50 GeV/c are collected. Using the TRD together with the Silicon calorimeter, it is achieved an overall rejection factor of about 10{sup -5} of positron against the proton background over the entire momentum range.

International Nuclear Information System (INIS)

A report is given on an improved filler-binder mixing method in the manufacture of artificial graphite, the so-called coat-mix process. The individual graphite-filler grains are coated completely with uniform binder coatings (phenol formaldehyde resin) in a continuous process. Methanol is used as solvent for the resin. In a modified further development of the process, the use of organic solvents can be disregarded by dissolving the binder resin in caustic soda and injecting the slurry into water diluted acid. The manufacture of casting molds from coat-mix powders, their properties and industrial application are given. Finally, the advantages of using carbon bodies of coal-mix material for conversion to silicon carbide are indicated. (IHOE).

Energy Technology Data Exchange (ETDEWEB)

During this reporting period the work supported by the US Department of Energy Grant No. DE-FG02-87ER40326.A005 has resulted in two publications and two papers presented at professional meetings. The neutron scattering measurement for this budget period has been completed along with scattering measurements for carbon {sup 88}Sr, {sup 40}Ar, {sup 90}Zr, {sup 208}Pb, {sup 40}Ca and {sup 28}Si. The carbon scattering yield serves to define the detector efficiencies. The silicon sample was available and is of importance in both nuclear physics and reactor physics.