Magnetic properties of the alkali metal ozonides KO3, RbO3, and CsO3

International Nuclear Information System (INIS)

Lueken, H.; Deussen, M.; Jansen, M.; Hesse, W.; Schnick, W.

1987-01-01

The magnetic susceptibilities of KO 3 , RbO 3 and CsO 3 have been determined between 3.6 and 250 K. Above 50 K Curie-Weiss behaviour is observed. Magnetic moments of 1.74 μ B (KO 3 , CsO 3 ) and 1.80 μ B (RbO 3 ) calculated from the Curie-Weiss straight lines correspond with spin-only moments expected for isolated O 3 - species with one unpaired electron. The Weiss constants Θ are -34 K (KO 3 ), -23 K (RbO 3 ) and -10 K (CsO 3 ). The low temperature behaviour of KO 3 and RbO 3 (broad maxima in susceptibility at 20 and 17 K, respectively, and minima at 6 K) is typical of systems which show with decreasing temperature low-dimensional antiferromagnetic and three-dimensional magnetic ordering. Inspecting the intermolecular distances between oxygen atoms the pathways of exchange interactions are discussed. (author)

Research Progress and Development of Sapphire Fiber Sensor

Directory of Open Access Journals (Sweden)

Guochang ZHAO

2014-07-01

Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

Science.gov (United States)

Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

2018-05-01

We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

DSP-based CSO cancellation technique for RoF transmission system implemented by using directly modulated laser.

Science.gov (United States)

Kim, Byung Gon; Bae, Sung Hyun; Kim, Hoon; Chung, Yun C

2017-05-29

We propose and demonstrate a simple composite second-order (CSO) cancellation technique based on the digital signal processing (DSP) for the radio-over-fiber (RoF) transmission system implemented by using directly modulated lasers (DMLs). When the RoF transmission system is implemented by using DMLs, its performance could be limited by the CSO distortions caused by the interplay between the DML's chirp and fiber's chromatic dispersion. We present the theoretical analysis of these nonlinear distortions and show that they can be suppressed at the receiver by using a simple DSP. To verify the effectiveness of the proposed technique, we demonstrate the transmission of twenty-four 100-MHz filtered orthogonal frequency-division multiplexing (f-OFDM) signals in 64 quadrature amplitude modulation (QAM) format over 20 km of the standard single-mode fiber (SSMF). The results show that, by using the proposed technique, we can suppress the CSO distortion components by >10 dB and achieve the error-vector magnitude performance better than 6% even after the 20-km long SSMF transmission.

Neutron Transmission of Single-crystal Sapphire Filters

Science.gov (United States)

Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

2005-05-01

An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

Neutron transmission of single-crystal sapphire filters

International Nuclear Information System (INIS)

Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

2005-01-01

An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)

Neutron transmission of single-crystal sapphire filters

International Nuclear Information System (INIS)

Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

2004-01-01

A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons

Assessing the efficiency of different CSO positions based on network graph characteristics.

Science.gov (United States)

Sitzenfrei, R; Urich, C; Möderl, M; Rauch, W

2013-01-01

The technical design of urban drainage systems comprises two major aspects: first, the spatial layout of the sewer system and second, the pipe-sizing process. Usually, engineers determine the spatial layout of the sewer network manually, taking into account physical features and future planning scenarios. Before the pipe-sizing process starts, it is important to determine locations of possible weirs and combined sewer overflows (CSOs) based on, e.g. distance to receiving water bodies or to a wastewater treatment plant and available space for storage units. However, positions of CSOs are also determined by topological characteristics of the sewer networks. In order to better understand the impact of placement choices for CSOs and storage units in new systems, this work aims to determine case unspecific, general rules. Therefore, based on numerous, stochastically generated virtual alpine sewer systems of different sizes it is investigated how choices for placement of CSOs and storage units have an impact on the pipe-sizing process (hence, also on investment costs) and on technical performance (CSO efficiency and flooding). To describe the impact of the topological positions of these elements in the sewer networks, graph characteristics are used. With an evaluation of 2,000 different alpine combined sewer systems, it was found that, as expected, with CSOs at more downstream positions in the network, greater construction costs and better performance regarding CSO efficiency result. At a specific point (i.e. topological network position), no significant difference (further increase) in construction costs can be identified. Contrarily, the flooding efficiency increases with more upstream positions of the CSOs. Therefore, CSO and flooding efficiency are in a trade-off conflict and a compromise is required.

Reduced cost and improved figure of sapphire optical components

Science.gov (United States)

Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

2015-10-01

Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

A Point Source of a Different Color: Identifying a Gap in United States Regulatory Policy for “Green” CSO Treatment Using Constructed Wetlands

Directory of Open Access Journals (Sweden)

Zeno F. Levy

2014-04-01

Full Text Available Up to 850 billion gallons of untreated combined sewer overflow (CSO is discharged into waters of the United States each year. Recent changes in CSO management policy support green infrastructure (GI technologies as “front of the pipe” approaches to discharge mitigation by detention/reduction of urban stormwater runoff. Constructed wetlands for CSO treatment have been considered among suites of GI solutions. However, these wetlands differ fundamentally from other GI technologies in that they are “end of the pipe” treatment systems that discharge from a point source, and are therefore regulated in the U.S. under the National Pollution Discharge Elimination System (NPDES. We use a comparative regulatory analysis to examine the U.S. policy framework for CSO treatment wetlands. We find in all cases that permitting authorities have used best professional judgment to determine effluent limits and compliance monitoring requirements, referencing technology and water quality-based standards originally developed for traditional “grey” treatment systems. A qualitative comparison with Europe shows less stringent regulatory requirements, perhaps due to institutionalized design parameters. We recommend that permitting authorities develop technical guidance documents for evaluation of “green” CSO treatment systems that account for their unique operational concerns and benefits with respect to sustainable development.

Sapphire capillary interstitial irradiators for laser medicine

Science.gov (United States)

Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

2018-04-01

In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

Sapphire: A kinking nonlinear elastic solid

Science.gov (United States)

Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

2006-03-01

Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

Controllable laser thermal cleavage of sapphire wafers

Science.gov (United States)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Oleophobic properties of the step-and-terrace sapphire surface

Energy Technology Data Exchange (ETDEWEB)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

2017-03-15

Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.

Surface study of irradiated sapphires from Phrae Province, Thailand using AFM

Science.gov (United States)

Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.

2017-09-01

The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.

Leveraging Python Interoperability Tools to Improve Sapphire's Usability

Energy Technology Data Exchange (ETDEWEB)

Gezahegne, A; Love, N S

2007-12-10

The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

Science.gov (United States)

Maskell, P.; Oram, L.

The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

Spatial chirp in Ti:sapphire multipass amplifier

International Nuclear Information System (INIS)

Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

2017-01-01

The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

A peek into the history of sapphire crystal growth

Science.gov (United States)

Harris, Daniel C.

2003-09-01

After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

Nanostructured sapphire optical fiber for sensing in harsh environments

Science.gov (United States)

Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

2017-05-01

We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

International Nuclear Information System (INIS)

Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

2016-01-01

High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices. (paper)

Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

Energy Technology Data Exchange (ETDEWEB)

Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

2013-12-31

This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

Semipolar GaN grown on m-plane sapphire using MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

2008-07-01

We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Submillimeter (Lambda < 1 mm) Continuum Imaging at CSO: A Retrospective

Science.gov (United States)

Dowell, C. Darren

2009-01-01

This contribution is submitted on behalf of all students, postdocs, and staff inspired and supported by Tom Phillips to build an instrument and then wait for low precipitable water vapor. Over the 20 plus years of its existence, the Caltech Submillimeter Observatory (CSO) has seen a succession of ever more powerful detectors to measure continuum emission in the shortest submillimeter bands available from Mauna Kea. These instruments have been trained on the nearest solar systems, the most distant galaxies, and objects in between. I show several images collected over the 5 plus year history of the SHARC II camera and anecdotal comparison with past work.

Order in nanometer thick intergranular films at Au-sapphire interfaces

Energy Technology Data Exchange (ETDEWEB)

Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2011-08-15

Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

International Nuclear Information System (INIS)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-01-01

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

CSO and CARMA Observations of L1157. I. A Deep Search for Hydroxylamine (NH2OH)

Science.gov (United States)

McGuire, Brett A.; Carroll, P. Brandon; Dollhopf, Niklaus M.; Crockett, Nathan R.; Corby, Joanna F.; Loomis, Ryan A.; Burkhardt, Andrew M.; Shingledecker, Christopher; Blake, Geoffrey A.; Remijan, Anthony J.

2015-10-01

A deep search for the potential glycine precursor hydroxylamine (NH2OH) using the Caltech Submillimeter Observatory (CSO) at λ = 1.3 mm and the Combined Array for Research in Millimeter-wave Astronomy at λ = 3 mm is presented toward the molecular outflow L1157, targeting the B1 and B2 shocked regions. We report non-detections of NH2OH in both sources. We perform a non-LTE analysis of CH3OH observed in our CSO spectra to derive the kinetic temperatures and densities in the shocked regions. Using these parameters, we derive upper limit column densities of NH2OH of ≤1.4 × 1013 cm-2 and ≤1.5 × 1013 cm-2 toward the B1 and B2 shocks, respectively, and upper limit relative abundances of {N}{{NH}2{OH}}/{N}{{{H}}2}≤slant 1.4× {10}-8 and ≤1.5 × 10-8, respectively.

Reduced transposed flicker noise in microwave oscillators using gaas-based feedforward amplifiers.

Science.gov (United States)

Everard, Jeremy K A; Broomfield, Carl D

2007-06-01

Transposed flicker noise reduction and removal is demonstrated in 7.6 GHz microwave oscillators for offsets greater than 10 kHz. This is achieved by using a GaAs-based feedforward power amplifier as the oscillation-sustaining stage and incorporating a limiter and resonator elsewhere in the loop. 20 dB noise suppression is demonstrated at 12.5 kHz offset when the error correcting amplifier is switched on. Three oscillator pairs have been built. A transmission line feedback oscillator with a Qo of 180 and two sapphire-based, dielectric resonator oscillators (DROs) with a Qo of 44,500. The difference between the two DROs is a change in the limiter threshold power level of 10 dB. The phase noise rolls-off at (1/f)(2) for offsets greater than 10 kHz for the transmission line oscillator and is set by the thermal noise to within 0-1 dB of the theoretical minimum. The noise performance of the DROs is within 6-12 dB of the theory. Possible reasons for this discrepancy are presented.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Science.gov (United States)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-12-01

Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

Directory of Open Access Journals (Sweden)

X. Wei

2012-01-01

Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

Science.gov (United States)

Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

2017-09-01

Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

Interfacial reactions between sapphire and Ag–Cu–Ti-based active braze alloys

International Nuclear Information System (INIS)

Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

2016-01-01

The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and sapphire have been studied. In separate experiments, Ag–35.3Cu–1.8Ti wt.% and Ag–26.7Cu–4.5Ti wt.% alloys have been sandwiched between pieces of R-plane orientated sapphire and heated in argon to temperatures between 750 and 900 °C for 1 min. The phases at the Ag–Cu–Ti/sapphire interfaces have been studied using selected area electron diffraction, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Gradual and subtle changes at the Ag–Cu–Ti/sapphire interfaces were observed as a function of temperature, along with the formation of a transient phase that permitted wetting of the sapphire. Unequivocal evidence is shown that when the active braze alloys melt, titanium first migrates to the sapphire and reacts to dissolve up to ∼33 at.% oxygen, forming a nanometre-size polycrystalline layer with a chemical composition of Ti 2 O 1–x (x ≪ 1). Ti 3 Cu 3 O particles subsequently nucleate behind the Ti 2 O 1–x layer and grow to become a continuous micrometre-size layer, replacing the Ti 2 O 1–x layer. Finally at 845 °C, a nanometre-size γ-TiO layer forms on the sapphire to leave a typical interfacial structure of Ag–Cu/Ti 3 Cu 3 O/γ-TiO/sapphire consistent with that seen in samples of polycrystalline alumina joined to itself with these active braze alloys. These experimental observations have been used to establish a definitive bonding mechanism for the joining of sapphire with Ag–Cu alloys activated by small amounts of titanium.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Energy Technology Data Exchange (ETDEWEB)

Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

2015-12-15

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Ti:Sapphire waveguide lasers

NARCIS (Netherlands)

Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

2007-01-01

Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

Reliability improvement methods for sapphire fiber temperature sensors

Science.gov (United States)

Schietinger, C.; Adams, B.

1991-08-01

Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

DEFF Research Database (Denmark)

Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

2017-01-01

higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

Nonlinearity Mechanism and Correction of Sapphire Fiber Temperature Sensor on Blackbody Cavity

Directory of Open Access Journals (Sweden)

Tiejun Cao

2014-06-01

Full Text Available Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stability of the sensor. In order to solve the nonlinear problems which exist in the measurement, at first, the sapphire fiber optic temperature sensor temperature measurement principle and nonlinear generation mechanism are studied; secondly piecewise linear interpolation and spline interpolation linearization algorithm is designed with combining the nonlinear characteristics of sapphire optical fiber temperature sensor, and the program is designed on its linear and associated signal processing. Experimental results show that a good linearization of sapphire fiber optic temperature sensor can been achieved in this method.

'Sapphire' project. Objectives and outcomes

International Nuclear Information System (INIS)

Shkolnik, V.S.

1997-01-01

'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2012-01-01

. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

Optimizing Ti:Sapphire laser for quantitative biomedical imaging

Science.gov (United States)

James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

2018-02-01

Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

Oxidation states of Fe and Ti in blue sapphire

International Nuclear Information System (INIS)

Wongrawang, P; Wongkokua, W; Monarumit, N; Thammajak, N; Wathanakul, P

2016-01-01

X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe 2+ and Ti 4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe 3+ state; and Ti at 4984 eV, corresponding to Ti 4+ . From these results, we propose Fe 3+ -Ti 4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV–vis absorption spectra, to describe the cause of the color of blue sapphire. (paper)

Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

Science.gov (United States)

Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

2018-03-01

The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

Electronic structure analysis of GaN films grown on r- and a-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2015-10-05

Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

LED-pumped Alexandrite laser oscillator and amplifier

Science.gov (United States)

Pichon, Pierre; Blanchot, Jean-Philippe; Balembois, François; Druon, Frédéric; Georges, Patrick

2018-02-01

In this paper, we report the first LED-pumped transition-metal-doped laser oscillator and amplifier based on an alexandrite crystal (Cr3+:BeAl2O4). A Ce:YAG luminescent concentrator illuminated by blue LEDs is used to reach higher pump powers than with LEDs alone. The luminescent 200-mm-long-composit luminescent concentrator involving 2240 LEDs can delivers up to 268 mJ for a peak irradiance of 8.5 kW/cm2. In oscillator configuration, an LED-pumped alexandrite laser delivering an energy of 2.9 mJ at 748 nm in free running operation is demonstrated. In the cavity, we measured a double pass small signal gain of 1.28, in good agreement with numerical simulations. As amplifier, the system demonstrated to boost a CW Ti:sapphire laser by a factor of 4 at 750 nm in 8 passes with a large tuning range from 710 nm to 800 nm.

Use of sapphire as a neutron damage monitor for pressure vessel steels

International Nuclear Information System (INIS)

Pells, G.P.; Fudge, A.J.; Murphy, M.J.; Watt, S.

1989-01-01

Single crystal α-Al 2 O 3 (sapphire) has been neutron irradiated over a range of dose, dose rate and neutron energy spectra at temperatures from 60 to 310 0 C. Values of optical absorption at 400 nm, the peak of the aluminum vacancy absorption band, were plotted against damage dose expressed in terms of dpa of Al in sapphire obtained from measurements of induced radio-activity in activation foils irradiated with the sapphires and from calculation of the neutron energy spectrum at the irradiation position. The neutron energy spectrum was calculated using modern neutron transport computer codes and adjusted in the light of measurements obtained from multiple foil activation experiments. A simple response curve was obtained for all sapphires irradiated at temperatures between 220 to 310 0 C and for sapphires irradiated below 200 0 C which had been annealed at 290 0 C irrespective of dose rate or neutron beam energy spectrum. The single response curve for irradiations performed in a variety of neutron energy spectra validate the neutron energy spectrum computational procedures

Neutron Transmission through Sapphire Crystals

DEFF Research Database (Denmark)

of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

International Nuclear Information System (INIS)

Zeng, Yong; Zhao, Yan; Jiang, Yijian

2015-01-01

Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

Science.gov (United States)

Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

1996-01-01

In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

Thermal healing of the sub-surface damage layer in sapphire

International Nuclear Information System (INIS)

Pinkas, Malki; Lotem, Haim; Golan, Yuval; Einav, Yeheskel; Golan, Roxana; Chakotay, Elad; Haim, Avivit; Sinai, Ela; Vaknin, Moshe; Hershkovitz, Yasmin; Horowitz, Atara

2010-01-01

The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

2014-01-01

The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

Energy Technology Data Exchange (ETDEWEB)

Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; and others

1998-03-01

A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

Sapphire-fiber-based distributed high-temperature sensing system.

Science.gov (United States)

Liu, Bo; Yu, Zhihao; Hill, Cary; Cheng, Yujie; Homa, Daniel; Pickrell, Gary; Wang, Anbo

2016-09-15

We present, for the first time to our knowledge, a sapphire-fiber-based distributed high-temperature sensing system based on a Raman distributed sensing technique. High peak power laser pulses at 532 nm were coupled into the sapphire fiber to generate the Raman signal. The returned Raman Stokes and anti-Stokes signals were measured in the time domain to determine the temperature distribution along the fiber. The sensor was demonstrated from room temperature up to 1200°C in which the average standard deviation is about 3.7°C and a spatial resolution of about 14 cm was achieved.

MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

2014-07-15

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

International Nuclear Information System (INIS)

Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

2016-01-01

Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

Microstructure evolution in carbon-ion implanted sapphire

International Nuclear Information System (INIS)

Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

2010-01-01

Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

Energy Technology Data Exchange (ETDEWEB)

Shimoji, Yutaka

2010-08-09

Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

Science.gov (United States)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

Science.gov (United States)

Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-01-08

A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

(211) oriented ZnTe growth on m-plane sapphire by MBE

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

2013-11-15

Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Sea level characterization of a 1100 g sapphire bolometer

CERN Document Server

Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

1999-01-01

A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

Energy Technology Data Exchange (ETDEWEB)

Luca, M

2007-07-15

Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

Energy Technology Data Exchange (ETDEWEB)

Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

2015-07-15

Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

Directory of Open Access Journals (Sweden)

Wen Hua-Chiang

2010-01-01

Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

Thermal neutron scattering kernels for sapphire and silicon single crystals

International Nuclear Information System (INIS)

Cantargi, F.; Granada, J.R.; Mayer, R.E.

2015-01-01

Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

Neutron method for NDA in the Sapphire Project

International Nuclear Information System (INIS)

Lewis, K.D.

1995-01-01

The implementation of Project Sapphire, the top-secret mission to the Republic of Kazakhstan to recover weapons-grade nuclear materials, consisted of four major elements: (1) repacking of fissile material from Kazakh containers into suitable U.S. containers; (2) nondestructive analyses (NDA) to quantify the 235 U content of each container for nuclear criticality safety and compliance purposes; (3) packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of the Sapphire operations to analyze uranium/beryllium (U/Be) alloys and compounds for 235 U content

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

An injection modelocked Ti-sapphire laser for synchronous photoinjection

International Nuclear Information System (INIS)

Hovater, C.; Poelker, M.

1997-01-01

The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

Model based hydropower gate operation for mitigation of CSO impacts by means of river base flow increase.

Science.gov (United States)

Achleitner, S; De Toffol, S; Engelhard, C; Rauch, W

2005-01-01

In river stretches being subjected to flow regulation, usually for the purpose of energy production (e.g. Hydropower) or flood protection (river barrage), a special measure can be taken against the effect of combined sewer overflows (CSOs). The basic idea is the temporal increase of the river base flow (during storm weather) as an in-stream measure for mitigation of CSO spilling. The focus is the mitigation of the negative effect of acute pollution of substances. The measure developed can be seen as an application of the classic real time control (RTC) concept onto the river system. Upstream gate operation is to be based on real time monitoring and forecasting of precipitation. The main objective is the development of a model based predictive control system for the gate operation, by modelling of the overall wastewater system (incl. the receiving water). The main emphasis is put on the operational strategy and the appropriate short-term forecast of spilling events. The potential of the measure is tested for the application of the operational strategy and its ecological and economic feasibility. The implementation of such an in-stream measure into the hydropower's operational scheme is unique. Advantages are (a) the additional in-stream dilution of acute pollutants entering the receiving water and (b) the resulting minimization of the required CSO storage volume.

Evolutionary and Holistic Assessment of Green-Grey Infrastructure for CSO Reduction

Directory of Open Access Journals (Sweden)

Alida Alves

2016-09-01

Full Text Available Recent research suggests future alterations in rainfall patterns due to climate variability, affecting public safety and health in urban areas. Urban growth, one of the main drivers of change in the current century, will also affect these conditions. Traditional drainage approaches using grey infrastructure offer low adaptation to an uncertain future. New methodologies of stormwater management focus on decentralized approaches in a long-term planning framework, including the use of Green Infrastructure (GI. This work presents a novel methodology to select, evaluate, and place different green-grey practices (or measures for retrofitting urban drainage systems. The methodology uses a hydrodynamic model and multi-objective optimization to design solutions at a watershed level. The method proposed in this study was applied in a highly urbanized watershed to evaluate the effect of these measures on Combined Sewer Overflows (CSO quantity. This approach produced promising results and may become a useful tool for planning and decision making of drainage systems.

Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

Science.gov (United States)

Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

2017-09-01

Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

2017-01-01

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding

2017-05-12

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

Tunable femtosecond laser in the visible range with an intracavity frequency-doubled optical parametric oscillator

International Nuclear Information System (INIS)

Zhu Jiang-Feng; Xu Liang; Lin Qing-Feng; Zhong Xin; Han Hai-Nian; Wei Zhi-Yi

2013-01-01

We demonstrated experimentally a synchronously pumped intracavity frequency-doubled femtosecond optical parametric oscillator (OPO) using a periodically-poled lithium niobate (PPLN) as the nonlinear material in combination with a lithium triborate (LBO) as the doubling crystal. A Kerr-lens-mode-locked (KLM) Ti:sapphire oscillator at the wavelength of 790 nm was used as the pump source, which was capable of generating pulses with a duration as short as 117 fs. A tunable femtosecond laser covering the 624–672 nm range was realized by conveniently adjusting the OPO cavity length. A maximum average output power of 260 mW in the visible range was obtained at the pump power of 2.2 W, with a typical pulse duration of 205 fs assuming a sech 2 pulse profile. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

Energy Technology Data Exchange (ETDEWEB)

Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States)

2017-12-15

The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

Science.gov (United States)

Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

2012-01-01

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

Science.gov (United States)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

Contribution to the microwave characterisation of superconductive materials by means of sapphire resonators

International Nuclear Information System (INIS)

Hanus, Xavier

1993-01-01

The objective of this research thesis is to find a compact resonant structure which would allow the residual surface impedance of superconductive samples to be simply, quickly and economically characterised. The author first explains why he decided to use a sapphire single-crystal as inner dielectric, given some performance reached by resonant structures equipped with such inner dielectrics, and given constraints adopted from the start. He explains the origin of microwave losses which appear in this type of resonant structure, i.e. respectively the surface impedance as far as metallic losses are concerned, and the sapphire dielectric loss angle for as far as dielectric losses are concerned. The experimental installation and the principle of microwave measurements are described. The performance of different possible solutions of resonant structures from starting criteria is presented. The solution of the cavity-sapphire with a TE 011 resonant mode is derived [fr

Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects

Science.gov (United States)

Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

2018-02-01

Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.

Single-transverse-mode Ti:sapphire rib waveguide laser

NARCIS (Netherlands)

Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus

2005-01-01

Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison

Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

International Nuclear Information System (INIS)

He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

2003-01-01

Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

Directory of Open Access Journals (Sweden)

Shih-Jeh Wu

2016-10-01

Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

International Nuclear Information System (INIS)

Yi, Jong Hoon; Horn, Roland; Wendt, K.

2001-01-01

We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

International Nuclear Information System (INIS)

Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

2015-01-01

Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

2015-08-17

Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Science.gov (United States)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

A neutron method for NDA analysis in the SAPPHIRE Project

International Nuclear Information System (INIS)

Lewis, K.D.

1995-01-01

The implementation of Project SAPPHIRE, the top secret mission to the Republic of Kazakhstan to recover weapons grade nuclear materials, consisted of four major elements: (1) the re-packing of fissile material from Kazakh containers into suitable US containers; (2) nondestructive analyses (NDA) to quantify the U-235 content of each container for Nuclear Criticality Safety and compliance purposes; (3) the packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) the shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of SAPPHIRE operations to analyze uranium/beryllium (U/Be) alloys and compounds for U-235 content

Thermal stress resistance of ion implanted sapphire crystals

International Nuclear Information System (INIS)

Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

1999-01-01

Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

Energy Technology Data Exchange (ETDEWEB)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

2015-07-15

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

Energy Technology Data Exchange (ETDEWEB)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Neurosurgery contact handheld probe based on sapphire shaped crystal

Science.gov (United States)

Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

2017-01-01

A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

Study of sapphire probe tip wear when scanning on different materials

International Nuclear Information System (INIS)

Nicolet, Anaïs; Küng, Alain; Meli, Felix

2012-01-01

The accuracy of today's coordinate measuring machines (CMM) has reached a level at which exact knowledge of each component is required. The role of the probe tip is particularly crucial as it is in contact with the sample surface. Understanding how the probe tip wears off will help to narrow the measurement errors. In this work, wear of a sapphire sphere was studied for different scanning conditions and with different sample materials. Wear depth on the probe was investigated using an automated process in situ on the METAS micro-CMM and completed by measurements with an atomic force microscope. We often found a linear dependence between the wear depth and the scan length ranging from 0.5 to 9 nm m −1 , due to variations in scan speed, contact force or sample material. In the case of steel, the wear rate is proportional to the scan speed, while for aluminum several processes seem to interact. A large amount of debris was visible after the tests. Except for aluminum, wear was visible only on the sphere and not on the sample. Sapphire/steel is the worst combination in terms of wear, whereas the combination sapphire/ceramic exhibits almost no wear. (paper)

Antireflection coatings for intraocular lenses of sapphire and fianite

Energy Technology Data Exchange (ETDEWEB)

Babin, A.A.; Konoplev, Yu.N.; Mamaev, Yu.A. [Inst. of Applied Physics, Nizhnii Novgorod (Russian Federation)] [and others

1995-10-01

Broadband antireflection coatings for intraocular lenses of sapphire and fianite are calculated and implemented practically. Their residual reflectance in the liquid with a refracting index of 1.336 is below 0.2% from each face virtually over the entire visible region. 7 refs., 2 figs., 2 tabs.

Scintillation of sapphire under particle excitation at low temperature

International Nuclear Information System (INIS)

Amare, J; Beltran, B; Cebrian, S; Coron, N; Dambier, G; GarcIa, E; Gomez, H; Irastorza, I G; Leblanc, J; Luzon, G; Marcillac, P de; Martinez, M; Morales, J; Ortiz de Solorzano, A; Pobes, C; Puimedon, J; Redon, T; RodrIguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A

2006-01-01

The scintillation properties of undoped sapphire at very low temperature have been studied in the framework of the ROSEBUD (Rare Objects SEarch with Bolometers UnDerground) Collaboration devoted to dark matter searches. We present an estimation of its light yield under gamma, alpha and neutron excitation

Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

International Nuclear Information System (INIS)

Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

2014-01-01

AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

Science.gov (United States)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Femtosecond resolution timing jitter correction on a TW scale Ti:sapphire laser system for FEL pump-probe experiments.

Science.gov (United States)

Csatari Divall, Marta; Mutter, Patrick; Divall, Edwin J; Hauri, Christoph P

2015-11-16

Intense ultrashort pulse lasers are used for fs resolution pump-probe experiments more and more at large scale facilities, such as free electron lasers (FEL). Measurement of the arrival time of the laser pulses and stabilization to the machine or other sub-systems on the target, is crucial for high time-resolution measurements. In this work we report on a single shot, spectrally resolved, non-collinear cross-correlator with sub-fs resolution. With a feedback applied we keep the output of the TW class Ti:sapphire amplifier chain in time with the seed oscillator to ~3 fs RMS level for several hours. This is well below the typical pulse duration used at FELs and supports fs resolution pump-probe experiments. Short term jitter and long term timing drift measurements are presented. Applicability to other wavelengths and integration into the timing infrastructure of the FEL are also covered to show the full potential of the device.

Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

Science.gov (United States)

Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

2018-01-01

The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

A Century of Sapphire Crystal Growth

Science.gov (United States)

2004-05-17

should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

Influence of interfacial reactions on the fiber push-out behavior in sapphire fiber-reinforced-NiAl(Yb) composites

International Nuclear Information System (INIS)

Tewari, S.N.; Asthana, R.; Tiwari, R.; Bowman, R.R.

1993-01-01

The influence of microstructure of the fiber-matrix interface on the fiber push-out behavior has been examined in sapphire fiber-reinforced NiAl and NiAl(Yb) matrix composites synthesized using powder metallurgy techniques combined with zone directional solidification (DS). The push-out stress-displacement curves were observed to consist of an initial 'pseudoelastic' region, wherein the stress increased linearly with displacement, followed by an 'inelastic' region, where the slope of the stress-displacement plot decreased until a maximum stress was reached, and the subsequent stress drop to a constant 'frictional' stress. Chemical reaction between the fiber and the matrix resulted in higher interfacial shear strength in powder cloth processed sapphire-NiAl(Yb) composites as compared to the sapphire-NiAl composites. Grain boundaries in contact with the fibers on the back face of the push-out samples were the preferred sites for crack nucleation in PM composites. The frictional stress was independent of the microstructure and processing variables for NiAl composites, but showed strong dependence on these variables for the NiAl(Yb) composites. The DS processing enhanced the fiber-matrix interfacial shear strength of feedstock PM-NiAl/sapphire composites. However, it reduced the interfacial shear strength of PM-NiAl(Yb)-sapphire composites

Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

International Nuclear Information System (INIS)

Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

2004-01-01

Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

Science.gov (United States)

Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

2013-12-02

We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

Design of all solid state tunable single-mode Ti: sapphire laser for nuclear industry

International Nuclear Information System (INIS)

Lee, J.H.; Nam, S.M.; Lee, Y.J.; Lee, J.M.; Horn, Roland E.; Wendt, Klaus

1999-01-01

We designed a Ti:Sapphire laser pumped by a diode laser pumped solid state laser (DPSSL). The DPSSL was intra-cavity frequency doubled and it had 20 W output power. The Ti:Sapphire laser was designed for single longitudinal mode lasing. For single mode lasing, the laser used several solid etalons. We simulated temporal evolution of the laser pulse and single pass amplification rate of the photons in each modes from rate equations. From the result, we found that single mode lasing is viable in this cavity

Detection of beryllium treatment of natural sapphires by NRA

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

2010-06-15

Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

Science.gov (United States)

Aguilar-Santillan, Joaquin

2013-05-01

The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

Science.gov (United States)

Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

2018-02-01

(11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

International Nuclear Information System (INIS)

Makino, Hisao; Song, Huaping; Yamamoto, Tetsuya

2014-01-01

The Ga-doped ZnO (GZO) films deposited on glass and c-plane sapphire substrates have been comparatively studied in order to explore the role of grain boundaries in electrical properties. The influences of oxygen gas flow rates (OFRs) during the deposition by ion-plating were examined. The dependences of carrier concentration, lattice parameters, and characteristic of thermal desorption of Zn on the OFR showed common features between glass and sapphire substrates, however, the Hall mobility showed different behavior. The Hall mobility of GZO films on glass increased with increasing OFR of up to 15 sccm, and decreased with further increasing OFR. On the other hand, the Hall mobility of GZO films on c-sapphire increased for up to 25 sccm. The role of grain boundary in polycrystalline GZO films has been discussed. - Highlights: • Ga-doped ZnO films were deposited on glass and c-sapphire by ion-plating. • The epitaxial growth on c-sapphire was confirmed by X-ray diffraction. • Dependence of Hall mobility showed different tendency between glass and sapphire. • Grain boundaries influence transport properties at high O 2 gas flow rate

Description of Project Sapphire. Revision 1

International Nuclear Information System (INIS)

Taylor, R.G.

1995-01-01

The mission of Project Sapphire was to repackage approximately 600 kg of highly enriched uranium (HEU) in the Republic of Kazakhstan into internationally acceptable shipping packages and transport the material to a storage location in the United States. There were four material types to be repackaged: metal; oxide; uranium/beryllium (U/Be) alloy; and residues from U/Be alloy production. Seven major steps described in this report were necessary for successful execution of the project: planning and training; readiness assessment; deployment; set up; process; take down; and transport. Nuclear criticality safety especially affected several of these steps

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Energy Technology Data Exchange (ETDEWEB)

Voronenkov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Y. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

Energy Technology Data Exchange (ETDEWEB)

Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

2015-06-01

Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

Interfacial thermal resistance between high-density polyethylene (HDPE) and sapphire

International Nuclear Information System (INIS)

Zheng Kun; Ma Yong-Mei; Wang Fo-Song; Zhu Jie; Tang Da-Wei

2014-01-01

To improve the thermal conductivity of polymeric composites, the numerous interfacial thermal resistance (ITR) inside is usually considered as a bottle neck, but the direct measurement of the ITR is hardly reported. In this paper, a sandwich structure which consists of transducer/high density polyethylene (HDPE)/sapphire is prepared to study the interface characteristics. Then, the ITRs between HDPE and sapphire of two samples with different HDPE thickness values are measured by time-domain thermoreflectance (TDTR) method and the results are ∼ 2 × 10 −7 m 2 ·K·W −1 . Furthermore, a model is used to evaluate the importance of ITR for the thermal conductivity of composites. The model's analysis indicates that reducing the ITR is an effective way of improving the thermal conductivity of composites. These results will provide valuable guidance for the design and manufacture of polymer-based thermally conductive materials. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Wetting behavior of liquid Fe-C-Ti alloys on sapphire

International Nuclear Information System (INIS)

Gelbstein, M.; Froumin, N.; Frage, N.

2008-01-01

Wetting behavior in the (Fe-C-Ti)/sapphire system was studied at 1823 K. The wetting angle between sapphire and Fe-C alloys is higher than 90 deg. (93 deg. and 105 deg. for the alloys with 1.4 and 3.6 at.% C, respectively). The presence of Ti improves the wetting of the iron-carbon alloys, especially for the alloys with carbon content of 3.6 at.%. The addition of 5 at.% Ti to Fe-3.6 at.% C provides a contact angle of about 30 deg., while the same addition to Fe-1.4 at.% C decreases the wetting angle to 70 deg. only. It was established that the wetting in the systems is controlled by the formation of a titanium oxicarbide layer at the interface, which composition and thickness depend on C and Ti contents in the melt. The experimental observations are well accounted for by a thermodynamic analysis of the Fe-Ti-Al-O-C system

Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

Energy Technology Data Exchange (ETDEWEB)

Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

2012-01-01

Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

International Nuclear Information System (INIS)

Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

2009-01-01

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

Drifts and Environmental Disturbances in Atomic Clock Subsystems: Quantifying Local Oscillator, Control Loop, and Ion Resonance Interactions.

Science.gov (United States)

Enzer, Daphna G; Diener, William A; Murphy, David W; Rao, Shanti R; Tjoelker, Robert L

2017-03-01

Linear ion trap frequency standards are among the most stable continuously operating frequency references and clocks. Depending on the application, they have been operated with a variety of local oscillators (LOs), including quartz ultrastable oscillators, hydrogen-masers, and cryogenic sapphire oscillators. The short-, intermediate-, and long-term stability of the frequency output is a complicated function of the fundamental performances, the time dependence of environmental disturbances, the atomic interrogation algorithm, the implemented control loop, and the environmental sensitivity of the LO and the atomic system components. For applications that require moving these references out of controlled lab spaces and into less stable environments, such as fieldwork or spaceflight, a deeper understanding is needed of how disturbances at different timescales impact the various subsystems of the clock and ultimately the output stability. In this paper, we analyze which perturbations have an impact and to what degree. We also report on a computational model of a control loop, which keeps the microwave source locked to the ion resonance. This model is shown to agree with laboratory measurements of how well the feedback removes various disturbances and also with a useful analytic approach we developed for predicting these impacts.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

Science.gov (United States)

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

Science.gov (United States)

Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

2010-03-20

We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

Lattice dynamics of sapphire (corundum). Pt. 2

International Nuclear Information System (INIS)

Kappus, W.

1975-01-01

Theoretical models of the lattice dynamics of sapphire (α - Al 2 O 3 ), based on the assumption of rigid ions, have been fitted to measured phonons at the Gamma-point of the Brillouin zone. Short range interactions were taken into account by assuming 2-body interactions between touching ions. Additional 3-body interactions could not improve the fit significantly. Calculated dispersion curves are presented and compared with inelastic neutron scattering data. A good agreement for branches along the trigonal axis can be stated. (orig.) [de

Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio, E-mail: ogino-toshio-rx@ynu.ac.jp

2017-02-28

Highlights: • Local hydrophobicity of phase-separated sapphire (0001) surfaces was investigated. • These surfaces are featured by coexistence of hydrophilic and hydrophobic domains. • Each domain was characterized by colloidal probe atomic force microscopy in water. • Both domains can be distinguished by adhesive forces of the probe to the surfaces. • Characterization in aqueous environment is important in bio-applications of sapphire. - Abstract: Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO{sub 2} probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

International Nuclear Information System (INIS)

Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

2011-01-01

Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

Microscopic origin of the optical processes in blue sapphire.

Science.gov (United States)

Bristow, Jessica K; Parker, Stephen C; Catlow, C Richard A; Woodley, Scott M; Walsh, Aron

2013-06-11

Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

Microscopic origin of the optical processes in blue sapphire

OpenAIRE

Bristow, JK; Parker, SC; Catlow, CRA; Woodley, SM; Walsh, A

2013-01-01

Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

Directory of Open Access Journals (Sweden)

Sheng-Fu Yu

2012-01-01

Full Text Available The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs grown on patterned sapphire substrates (PSSs with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%, 1.1 (57%, 1.5 (81%, and 1.9 (91% μm at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

Two-tint pump-probe measurements using a femtosecond laser oscillator and sharp-edged optical filters.

Science.gov (United States)

Kang, Kwangu; Koh, Yee Kan; Chiritescu, Catalin; Zheng, Xuan; Cahill, David G

2008-11-01

We describe a simple approach for rejecting unwanted scattered light in two types of time-resolved pump-probe measurements, time-domain thermoreflectance (TDTR) and time-resolved incoherent anti-Stokes Raman scattering (TRIARS). Sharp edged optical filters are used to create spectrally distinct pump and probe beams from the broad spectral output of a femtosecond Ti:sapphire laser oscillator. For TDTR, the diffusely scattered pump light is then blocked by a third optical filter. For TRIARS, depolarized scattering created by the pump is shifted in frequency by approximately 250 cm(-1) relative to the polarized scattering created by the probe; therefore, spectral features created by the pump and probe scattering can be easily distinguished.

Sapphire/TiAl composites - structure and properties

International Nuclear Information System (INIS)

Povarova, K.B.; Antonova, A.V.; Mileiko, S.T.; Sarkissyan, N.S.

2001-01-01

Ti-Al-intermetallic-based alloys with lamellar microstructure, -γ(TiAl) +α 2 (Ti 3 Al) are characterized by a high melting point of 1460 o C, a low density of ∼3.9 g/cm 3 , a high gas corrosion resistance up to a temperature of about 900 o C, a high creep resistance up to a temperature of about 800 o C, and a sufficiently high fracture toughness at low temperatures, up to 30 Mpa x m 1/2 . Hence, they are considered as excellent matrices for fibres of high melting point. Unlike well-developed SiC/TiAl composites, which have an obvious upper limit for the usage temperature due to SiC/TiAl interaction, Sapphire/TiAl composites remain nearly unknown because fibres to be used in such composites have not been really available. At the present time, such fibres are developed in Solid State Physics Inst. of RAS. The results of preliminary creep tests of Al 2 O 3 /TiAl composites obtained by using pressure casting have shown that usage of such composite systems shifts the temperature limit for light structural materials in terms of creep resistance to, at least, 1050 o C: creep strength on 100 h time base reaches 120 MPa at that temperature. It occurs also that Sapphire-fibres/TiAl-matrix composite specimens have an increased gas corrosion resistance by more than one order of the magnitudes as compared with that of the matrix alloy. (author)

Synthesis of titanium sapphire by ion implantation

International Nuclear Information System (INIS)

Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

1998-01-01

Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

2016-10-30

Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

Science.gov (United States)

Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

2015-01-01

Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

Structure of the Dislocation in Sapphire

DEFF Research Database (Denmark)

Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

1976-01-01

Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

Detection of solar neutrinos with a torsion balance with sapphire crystal

Science.gov (United States)

Cruceru, M.; Nicolescu, G.

2018-01-01

The solar neutrinos (antineutrinos) are detected with a dedicated torsion balance in the case when they interact coherently on stiff crystals (sapphire with high Debye temperature ∼1000K and lead with ∼100K Debye temperature). The balance consists in two equal masses of lead and sapphire, of 25g. An autocollimator coupled to this balance measures small rotation angles of the balance. The force with which neutrino flux interacts with these crystals is between 10-5 dyn and 10-8 dyn, comparable with that reported in Weber’s experiments [1]. A diurnal effect is observed for solar neutrinos due to the rotation of the Earth around its own axes. The solar neutrino flux obtained at the site of our experiment is ∼3.8*1010neutrinos/cm2*s [2]. Experimental data for neutrinos signals from this high sensitivity torsion balance are presented and commented [3].

Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

Science.gov (United States)

Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

2017-11-01

The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

International Nuclear Information System (INIS)

Okada, Narihito; Tadatomo, Kazuyuki

2012-01-01

Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

Science.gov (United States)

Akazawa, Housei; Ueno, Yuko

2014-10-01

We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

Science.gov (United States)

Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

2015-08-01

With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

Energy Technology Data Exchange (ETDEWEB)

Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

2015-07-01

Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Energy Technology Data Exchange (ETDEWEB)

Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

2000-07-01

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Characterization of sapphire: For its material properties at high temperatures

Science.gov (United States)

Bal, Harman Singh

There are numerous needs for sensing, one of which is in pressure sensing for high temperature application such as combustion related process and embedded in aircraft wings for reusable space vehicles. Currently, silicon based MEMS technology is used for pressure sensing. However, due to material properties the sensors have a limited range of approximately 600 °C which is capable of being pushed towards 1000 °C with active cooling. This can introduce reliability issues when you add more parts and high flow rates to remove large amounts of heat. To overcome this challenge, sapphire is investigated for optical based pressure transducers at temperatures approaching 1400 °C. Due to its hardness and chemical inertness, traditional cutting and etching methods used in MEMS technology are not applicable. A method that is being investigated as a possible alternative is laser machining using a picosecond laser. In this research, we study the material property changes that occur from laser machining and quantify the changes with the experimental results obtained by testing sapphire at high-temperature with a standard 4-point bending set-up.

Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

International Nuclear Information System (INIS)

Stoker, D. S.; Keto, J. W.; Baek, J.; Wang, W.; Becker, M. F.; Kovar, D.

2006-01-01

We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χ xxxx (3) (3ω;ω,ω,ω)=1.52±0.25x10 -13 esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Electrical parameters of silicon on sapphire; influence on aluminium gate MOS devices performances

International Nuclear Information System (INIS)

Suat, J.P.; Borel, J.

1976-01-01

The question is the quality level of the substrate obtained with MOS technologies on silicon on an insulating substrate. Experimental results are presented on the main electrical parameters of MOS transistors made on silicon on sapphire, e.g. mean values and spreads of: threhold voltage and surface mobilities of transistors, breakdown voltages, and leakage currents of diodes. These devices have been made in three different technologies: enhancement P. channel technology, depletion-enhancement P. channel technology, and complementary MOS technology. These technologies are all aluminium gate processes with standard design rules and 5μm channel length. Measurements show that presently available silicon on sapphire can be considered as a very suitable substrate for many MOS digital applications (but not for dynamic circuits) [fr

Gold wetting effects on sapphire irradiated with GeV uranium ions

International Nuclear Information System (INIS)

Ramos, S.M.M.

1997-01-01

Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

Use of contact Nd:YAG sapphire-laser system for performing partial hepatectomy and splenectomy in dogs

Science.gov (United States)

Yu, Chibing; Jing, Shujuan; Cai, Huimin; Shao, Lanxing; Zou, Hegui

1993-03-01

An Nd:YAG Sapphire laser blade was used for performing hepatectomy and splenectomy in dogs. The results suggest that a laser blade provides a new way to reduce intraoperative bleeding and to minimize tissue damage. In recent years, there have been some reports on performing surgical procedures using a contact Nd:YAG Sapphire laser system. The current animal study was conducted in order to explore the capability of incision and excision of the laser tip, the damage to the tissue, and the recovery course.

Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

International Nuclear Information System (INIS)

Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

1995-01-01

YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

Time dependent temperature distribution in pulsed Ti:sapphire lasers

Science.gov (United States)

Buoncristiani, A. Martin; Byvik, Charles E.; Farrukh, Usamah O.

1988-01-01

An expression is derived for the time dependent temperature distribution in a finite solid state laser rod for an end-pumped beam of arbitrary shape. The specific case of end pumping by circular (constant) or Gaussian beam is described. The temperature profile for a single pump pulse and for repetitive pulse operation is discussed. The particular case of the temperature distribution in a pulsed titanium:sapphire rod is considered.

Facet Appearance on the Lateral Face of Sapphire Single-Crystal Fibers during LHPG Growth

Directory of Open Access Journals (Sweden)

Liudmila D. Iskhakova

2016-08-01

Full Text Available Results of the study of the lateral surface of single-crystal (SC sapphire fibers grown along crystallographic directions [ 0001 ] and [ 11 2 ¯ 0 ] by the LHPG method are presented. The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is investigated. The microstructure of the samples is investigated with the help of an optical microscope and a JSM-5910LV scanning electronic microscope (JEOL. The crystallographic orientations of the facets on the SC sapphire fiber surface are determined by electron backscatter diffraction (EBSD. The seed orientation is studied by means of XRD techniques.

Ultrafast, ultrahigh-peak power Ti:sapphire laser system

Energy Technology Data Exchange (ETDEWEB)

Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

2001-01-01

We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

Growth optimization for thick crack-free GaN layers on sapphire with HVPE

Energy Technology Data Exchange (ETDEWEB)

Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

2005-05-01

Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

Directory of Open Access Journals (Sweden)

Jaeyeong Lee

2017-12-01

Full Text Available The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages.

High-rate sputter deposition of NiAl on sapphire fibers

Energy Technology Data Exchange (ETDEWEB)

Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

2002-07-01

Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

Science.gov (United States)

Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

2016-08-01

Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. The light absorption values obtained from spectrofluorometeric study were 3300000-3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000-6500000 cps for Group 2 (polycrystalline ceramic brackets) and 2700000 -3000000 cps for

Erbium medium temperature localised doping into lithium niobate and sapphire: A comparative study

Czech Academy of Sciences Publication Activity Database

Nekvindová, P.; Macková, Anna; Peřina, Vratislav; Červená, Jarmila; Čapek, P.; Schrofel, J.; Špirková, J.; Oswald, Jiří

90-91, - (2003), s. 559-564 ISSN 1012-0394 Institutional research plan: CEZ:AV0Z1048901 Keywords : lithium niobate * sapphire * erbium Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.687, year: 2003

Photonics of 2D gold nanolayers on sapphire surface

Energy Technology Data Exchange (ETDEWEB)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Nabatov, B. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation); Konovko, A. A.; Belov, I. V.; Gizetdinov, R. M.; Andreev, A. V. [Moscow State University (Russian Federation); Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

2017-03-15

Gold layers with thicknesses of up to several nanometers, including ordered and disordered 2D nanostructures of gold particles, have been formed on sapphire substrates; their morphology is described; and optical investigations are carried out. The possibility of increasing the accuracy of predicting the optical properties of gold layers and 2D nanostructures using quantum-mechanical models based on functional density theory calculation techniques is considered. The application potential of the obtained materials in photonics is estimated.

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

International Nuclear Information System (INIS)

Lee, Y.J.; Hsu, T.C.; Kuo, H.C.; Wang, S.C.; Yang, Y.L.; Yen, S.N.; Chu, Y.T.; Shen, Y.J.; Hsieh, M.H.; Jou, M.J.; Lee, B.J.

2005-01-01

InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

2017-01-01

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding

2017-08-08

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

Science.gov (United States)

Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

2018-01-01

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

Energy Technology Data Exchange (ETDEWEB)

Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

2012-06-30

The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

Science.gov (United States)

Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

2018-01-01

Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

2015-10-30

Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

Superconducting accelerometer using niobium-on-sapphire rf resonator

International Nuclear Information System (INIS)

Blair, D.G.

1979-01-01

An accelerometer is described which uses a rf niobium-on-sapphire resonator as its sensor element. The accelerometer uses a magnetically levitated spool as a test mass and the spool modulates the inductance of the resonator; its position is servo controlled to maintain the resonator at the external rf excitation frequency. The accelerometer has high sensitivity over the full audio frequency range, but is optimized for frequencies between 100 Hz and 1 kHz, where the calculated displacement sensitivity approaches 10 -15 cm for a 1 Hz measurement bandwidth. The system noise sources are analyzed and possible improvements are discussed

"You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

Science.gov (United States)

Pappas, Christine

2007-01-01

Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

Science.gov (United States)

Cheng, Zongzhe; Hanke, Michael; Vogt, Patrick; Bierwagen, Oliver; Trampert, Achim

2017-10-01

Heteroepitaxial Ga2O3 was deposited on c-plane and a-plane oriented sapphire by plasma-assisted molecular beam epitaxy and probed by ex-situ and in-situ synchrotron-based x-ray diffraction. The investigation on c-plane sapphire determined a critical thickness of around 33 Å, at which the monoclinic β-phase forms on top of the hexagonal α-phase. A 143 Å thick single phase α-Ga2O3 was observed on a-plane sapphire, much thicker than the α-Ga2O3 on c-plane sapphire. The α-Ga2O3 relaxed very fast in the first 30 Å in both out-of-plane and in-plane directions as measured by the in-situ study.

Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

International Nuclear Information System (INIS)

Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

2004-01-01

We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Science.gov (United States)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

International Nuclear Information System (INIS)

Klinter, Andreas J.; Leon-Patino, Carlos A.; Drew, Robin A.L.

2010-01-01

Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions θ transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl 2 O 4 for Al-7Cu and Al 2 O 3 for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl 2 O 4 under CuAl 2 drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl 2 O 4 causes the reduced σ sl and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in θ with higher copper contents is the increasing σ lv of the alloy.

Say hello to the DSO

Science.gov (United States)

Pate, G.; Roberts, T.

1981-05-01

In the 2-to-10 GHz frequency range, the dielectrically stabilized oscillators (DSOs) with their small size, simple construction, and modest bias requirements, have advantages over cavity-stabilized oscillators (CSOs) and crystal-controlled multiplier chains (XCOs). Commercially available DSOs consist of a transistor oscillator locked to some frequency by a resonant disk of dielectric material. The disk is coupled to a microstrip line at the output of the oscillator. The stability of a DSO lies between that of a crystal-controlled oscillator and that of a cavity-stabilized oscillator. Dielectrically stabilized oscillators, built with nine basic parts and few solder joints, can be expected to be much more reliable than a CSO or XCO.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

Science.gov (United States)

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

Science.gov (United States)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

2010-07-15

The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

Energy Technology Data Exchange (ETDEWEB)

Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

2014-09-30

This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

Epitactical FeAl films on sapphire and their magnetic properties

International Nuclear Information System (INIS)

Trautvetter, Moritz

2011-01-01

In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

A Novel Method for Measurements of the Penetration Depth of MgB2 Superconductor Films by Using Sapphire Resonators with Short-Circuited Parallel Plates

International Nuclear Information System (INIS)

Jung, Ho Sang; Lee, J. H.; Cho, Y. H.; Lee, Sang Young; Seong, W. K.; Lee, N. H.; Kang, W. N.

2009-01-01

We introduce a measurement method that enables to measure the penetration depth(λ) of superconductor films by using a short-ended parallel plate sapphire resonator. Variations in the (λof MgB 2 films could be measured down to the lowest temperature using a sapphire resonator with a YBa 2 Cu 3 O 7-x film at the bottom. A model equation of λλ 0 [1-(T/T c ) τ ] -1/2 for MgB 2 films appeared to describe the observed variations of the resonant frequency of the sapphire resonator with temperature, with λ 0 , τ and T c used as the fitting parameters.

A memristor-based third-order oscillator: beyond oscillation

KAUST Repository

Talukdar, Abdul Hafiz Ibne

2012-10-06

This paper demonstrates the first third-order autonomous linear time variant circuit realization that enhances parametric oscillation through the usage of memristor in conventional oscillators. Although the output has sustained oscillation, the linear features of the conventional oscillators become time dependent. The poles oscillate in nonlinear behavior due to the oscillation of memristor resistance. The mathematical formulas as well as SPICE simulations are introduced for the memristor-based phase shift oscillator showing a great matching.

A memristor-based third-order oscillator: beyond oscillation

KAUST Repository

Talukdar, Abdul Hafiz Ibne; Radwan, Ahmed G.; Salama, Khaled N.

2012-01-01

This paper demonstrates the first third-order autonomous linear time variant circuit realization that enhances parametric oscillation through the usage of memristor in conventional oscillators. Although the output has sustained oscillation, the linear features of the conventional oscillators become time dependent. The poles oscillate in nonlinear behavior due to the oscillation of memristor resistance. The mathematical formulas as well as SPICE simulations are introduced for the memristor-based phase shift oscillator showing a great matching.

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D., E-mail: dupuis@gatech.edu [Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (United States); Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael [Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623 (Germany)

2014-10-06

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm{sup 2} and 95 kW/cm{sup 2} at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

International Nuclear Information System (INIS)

Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael

2014-01-01

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm 2 and 95 kW/cm 2 at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

Science.gov (United States)

Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

2017-05-01

Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

Coherent anti-Stokes Raman scattering microscopy with a photonic crystal fiber based light source

DEFF Research Database (Denmark)

Paulsen, H.N.; Hilligsøe, Karen Marie; Thøgersen, J.

2003-01-01

A coherent anti-Stokes Raman scattering microscope based on a Ti:sapphire femtosecond oscillator and a photonic crystal fiber is demonstrated. The nonlinear response of the fiber is used to generate the additional wavelength needed in the Raman process. The applicability of the setup is demonstra......A coherent anti-Stokes Raman scattering microscope based on a Ti:sapphire femtosecond oscillator and a photonic crystal fiber is demonstrated. The nonlinear response of the fiber is used to generate the additional wavelength needed in the Raman process. The applicability of the setup...

Refractive index of r-cut sapphire under shock pressure range 5 to 65 GPa

International Nuclear Information System (INIS)

Cao, Xiuxia; Li, Jiabo; Li, Jun; Li, Xuhai; Xu, Liang; Wang, Yuan; Zhu, Wenjun; Meng, Chuanmin; Zhou, Xianming

2014-01-01

High-pressure refractive index of optical window materials not only can provide information on electronic polarizability and band-gap structure, but also is important for velocity correction in particle-velocity measurement with laser interferometers. In this work, the refractive index of r-cut sapphire window at 1550 nm wavelength was measured under shock pressures of 5–65 GPa. The refractive index (n) decreases linearly with increasing shock density (ρ) for shock stress above the Hugoniot elastic limit (HEL): n = 2.0485 (± 0.0197) − 0.0729 (± 0.0043)ρ, while n remains nearly a constant for elastic shocks. This behavior is attributed to the transition from elastic (below HEL) to heterogeneous plastic deformation (above HEL). Based on the obtained refractive index-density relationship, polarizability of the shocked sapphire was also obtained

Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

Energy Technology Data Exchange (ETDEWEB)

Klinter, Andreas J., E-mail: andreas.klinter@mail.mcgill.ca [Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 University Street, Montreal, QC, H3A 2B2 (Canada); Leon-Patino, Carlos A. [Instituto de Investigaciones Metalurgicas, Universidad Michoacana de San Nicolas de Hidalgo, Apdo. Postal 888, CP 58000 Morelia, Michoacan (Mexico); Drew, Robin A.L. [Faculty of Engineering and Computer Science, Concordia University, 1455 Maisonneuve Blvd, EV 2.169, Montreal, QC, H3G 1M8 (Canada)

2010-02-15

Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions {theta} transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl{sub 2}O{sub 4} for Al-7Cu and Al{sub 2}O{sub 3} for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl{sub 2}O{sub 4} under CuAl{sub 2} drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl{sub 2}O{sub 4} causes the reduced {sigma}{sub sl} and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in {theta} with higher copper contents is the increasing {sigma}{sub lv} of the alloy.

Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

International Nuclear Information System (INIS)

Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

1986-01-01

This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

2004-09-01

The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

DEFF Research Database (Denmark)

Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

2007-01-01

We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors a...... as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate....

Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

Science.gov (United States)

Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

2018-01-01

An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

Science.gov (United States)

2010-01-01

... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Misuse of the words âruby,â âsapphire,â... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc. (a) It is unfair or deceptive to use the unqualified words “ruby,” “sapphire...

Structural characterization of AgGaTe{sub 2} layers grown on a- and c-sapphire substrates by a closed space sublimation method

Energy Technology Data Exchange (ETDEWEB)

Uruno, Aya; Usui, Ayaka [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2014-07-15

AgGaTe{sub 2} layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe{sub 2} layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag{sub 5}Te{sub 3} was formed along with the AgGaTe{sub 2} when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe{sub 2} without Ag{sub 5}Te{sub 3} layers could be grown on a-plane sapphire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Secondary electron emission of sapphire tungsten molybdenum and titanium for Maxwellian incident electrons

International Nuclear Information System (INIS)

Saussez-Hublet, M.-C.; Harbour, P.J.

1980-06-01

The second electron emission coefficient of various materials, namely titanium, molybdenum, tungsten and sapphire, has been calculated for a Maxwellian energy distribution from data for a normally incident monoenergetic beam of primary electrons. The most significant difference from the monoenergetic case occurs at low energies. In addition the influence of the incident angle of the electrons is discussed. (author)

An All-Solid-State High Repetiton Rate Titanium:Sapphire Laser System For Resonance Ionization Laser Ion Sources

Science.gov (United States)

Mattolat, C.; Rothe, S.; Schwellnus, F.; Gottwald, T.; Raeder, S.; Wendt, K.

2009-03-01

On-line production facilities for radioactive isotopes nowadays heavily rely on resonance ionization laser ion sources due to their demonstrated unsurpassed efficiency and elemental selectivity. Powerful high repetition rate tunable pulsed dye or Ti:sapphire lasers can be used for this purpose. To counteract limitations of short pulse pump lasers, as needed for dye laser pumping, i.e. copper vapor lasers, which include high maintenance and nevertheless often only imperfect reliability, an all-solid-state Nd:YAG pumped Ti:sapphire laser system has been constructed. This could complement or even replace dye laser systems, eliminating their disadvantages but on the other hand introduce shortcomings on the side of the available wavelength range. Pros and cons of these developments will be discussed.

Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

NARCIS (Netherlands)

Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

2003-01-01

Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles

Towards non-sequential double ionization of Ne and Ar using a femtosecond laser oscillator.

Science.gov (United States)

Liu, Yunquan; Tschuch, Sebastian; Dürr, Martin; Rudenko, Artem; Moshammer, Robert; Ullrich, Joachim; Siegel, Martin; Morgner, Uwe

2007-12-24

We report on first proof-of-principles results on non-sequential double ionization of argon and neon achieved by using a newly developed long-cavity Ti:sapphire femtosecond oscillator with a pulse duration of 45 fs and a repetition of 6.2 MHz combined with a dedicated reaction microscope. Under optimized experimental conditions, peak intensities larger than 2.310(14) W/cm(2) have been achieved. Ion momentum distributions were recorded for both rare gases and show significantly different features for single as well as for double ionization. For single ionization of neon a spike of zero-momentum electrons is found when decreasing the laser intensity towards the lowest ionization rate we can measure which is attributed to a non-resonant ionization channel. As to double ionization, the longitudinal momentum distribution for Ne(2+) displays a clear double-hump structure whereas this feature is found to be smoothened out with a maximum at zero momentum for Ar(2+).

CMOS Silicon-on-Sapphire RF Tunable Matching Networks

Directory of Open Access Journals (Sweden)

Chamseddine Ahmad

2006-01-01

Full Text Available This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

Origin for the shape of Au small crystals formed inside sapphire by ion implantation

International Nuclear Information System (INIS)

Ohkubo, M.; Hioki, T.

1989-01-01

In ion-implanted oxides, precipitation is usually formed except the case of forming solid solution. The precipitation comprises the metallic particles of implanted atoms, the oxide of implanted atoms, the metal of matrix elements, the compound of implanted atoms and matrix and so on. In particular, the metallic particles of implanted atoms are frequently faceted. From the facets, the equilibrium shape of crystals can be imagined. The equilibrium shape is determined so that the surface free energy is to be minimized. However, the shape of the metallic particles precipitated inside oxides should not be such equilibrium shape because they come in contact with foreign crystals. As the result, in the precipitation phenomena induced by ion implantation, the crystal structures of precipitated particles and substrates, the crystallographic relation between two crystals, interfacial energy and so on must be taken in consideration. In this paper, the report is made on the shape of the metallic gold particles formed inside sapphires by ion implantation that it was caused by only the crystal habit of sapphires regardless of the above-mentioned complexity. (K.I.)

Second Breakdown Susceptibility of Silicon-On-Sapphire Diodes having Systematically Different Geometries.

Science.gov (United States)

1980-05-30

Sunshine’s experiments less enlight - ening than they might otherwise have been. First, changes in optical transmittance could not be correlated directly to...silicon- on-sapphire technology ) and the orientation of the silicon surface ex- posed to the oxide layer44 ,46 ,4 7,51. Not enough data were taken to at...success. With rapid progress of semi- conductor technology , such simplified and largely intuitive methods proved to be inadequate for dealing with

Acoustic mismatch model and thermal phonon radiation across a tin/sapphire interface with radiation temperatures between 1.6 and 3.7 K

International Nuclear Information System (INIS)

Bayrle, R.; Weis, O.

1989-01-01

Using a special sandwich arrangement consisting of a constantan film, an insulating oxide layer and a superconducting tin-tunnel junction evaporated on an a-cut sapphire, the temperature jump between tin and sapphire has been measured as function of thermal phonon flux under steady-state and transient conditions using rectangular current pulses in the constantan heater. The tunnel junction serves as a very fast thermometer with a time resolution in the nanosecond range. During the steady-state and the heatup interval, full agreement is found between experimental results, and the predictions of the acoustic mismatch model applied to the phonon transfer across the tin/sapphire interface and under the additional assumption that thermal equilibrium exists between electrons and phonons (one-temperature model). In contrast, very strong deviations are found during the cooling process which starts immediately after the end of the heating pulses. This observed nonequilibrium between electron and phonon system is discussed in more detail in a subsequent paper

Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

DEFF Research Database (Denmark)

Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

2005-01-01

In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

Science.gov (United States)

Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

2012-05-21

Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

Science.gov (United States)

Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

1982-05-01

This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

Science.gov (United States)

Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

2016-11-21

The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

High energy iron ion implantation into sapphire

International Nuclear Information System (INIS)

Allen, W.R.; Pedraza, D.F.

1990-01-01

Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

International Nuclear Information System (INIS)

Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

1999-01-01

A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

78 FR 56691 - Sapphire Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes...

Science.gov (United States)

2013-09-13

... Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes Request for... Sapphire Power Marketing LLC's application for market-based rate authority, with an accompanying rate... submission of protests and interventions in lieu of paper, using the FERC Online links at http://www.ferc.gov...

Quenching oscillating behaviors in fractional coupled Stuart-Landau oscillators

Science.gov (United States)

Sun, Zhongkui; Xiao, Rui; Yang, Xiaoli; Xu, Wei

2018-03-01

Oscillation quenching has been widely studied during the past several decades in fields ranging from natural sciences to engineering, but investigations have so far been restricted to oscillators with an integer-order derivative. Here, we report the first study of amplitude death (AD) in fractional coupled Stuart-Landau oscillators with partial and/or complete conjugate couplings to explore oscillation quenching patterns and dynamics. It has been found that the fractional-order derivative impacts the AD state crucially. The area of the AD state increases along with the decrease of the fractional-order derivative. Furthermore, by introducing and adjusting a limiting feedback factor in coupling links, the AD state can be well tamed in fractional coupled oscillators. Hence, it provides one an effective approach to analyze and control the oscillating behaviors in fractional coupled oscillators.

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

2016-07-15

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

Science.gov (United States)

Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

2018-05-01

We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

The CsoR-like sulfurtransferase repressor (CstR) is a persulfide sensor in Staphylococcus aureus.

Science.gov (United States)

Luebke, Justin L; Shen, Jiangchuan; Bruce, Kevin E; Kehl-Fie, Thomas E; Peng, Hui; Skaar, Eric P; Giedroc, David P

2014-12-01

How cells regulate the bioavailability of utilizable sulfur while mitigating the effects of hydrogen sulfide toxicity is poorly understood. CstR [Copper-sensing operon repressor (CsoR)-like sulfurtransferase repressor] represses the expression of the cst operon encoding a putative sulfide oxidation system in Staphylococcus aureus. Here, we show that the cst operon is strongly and transiently induced by cellular sulfide stress in an acute phase and specific response and that cst-encoded genes are necessary to mitigate the effects of sulfide toxicity. Growth defects are most pronounced when S. aureus is cultured in chemically defined media with thiosulfate (TS) as a sole sulfur source, but are also apparent when cystine is used or in rich media. Under TS growth conditions, cells fail to grow as a result of either unregulated expression of the cst operon in a ΔcstR strain or transformation with a non-inducible C31A/C60A CstR that blocks cst induction. This suggests that the cst operon contributes to cellular sulfide homeostasis. Tandem high-resolution mass spectrometry reveals derivatization of CstR by both inorganic tetrasulfide and an organic persulfide, glutathione persulfide, to yield a mixture of Cys31-Cys60' interprotomer cross-links, including di-, tri- and tetrasulfide bonds, which allosterically inhibit cst operator DNA binding by CstR. © 2014 John Wiley & Sons Ltd.

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

Energy Technology Data Exchange (ETDEWEB)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

2005-02-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

International Nuclear Information System (INIS)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

2005-01-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

Science.gov (United States)

Carroz, L.; Duffar, T.

2018-05-01

In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

Laser ablation of dental calculus at 400 nm using a Ti:sapphire laser

Science.gov (United States)

Schoenly, Joshua E.; Seka, Wolf; Rechmann, Peter

2009-02-01

A Nd:YAG laser-pumped, frequency-doubled Ti:sapphire laser is used for selective ablation of calculus. The laser provides calculus removal. This is in stark contrast with tightly focused Gaussian beams that are energetically inefficient and lead to irreproducible results. Calculus is well ablated at high fluences >=2J/cm2 stalling occurs below this fluence because of photobleaching. Healthy hard tissue is not removed at fluences <=3 J/cm2.

Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

Directory of Open Access Journals (Sweden)

Keisuke Iwano

2016-10-01

Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

Oscillators and Eigenvalues

DEFF Research Database (Denmark)

Lindberg, Erik

1997-01-01

In order to obtain insight in the nature of nonlinear oscillators the eigenvalues of the linearized Jacobian of the differential equations describing the oscillator are found and displayed as functions of time. A number of oscillators are studied including Dewey's oscillator (piecewise linear wit...... with negative resistance), Kennedy's Colpitts-oscillator (with and without chaos) and a new 4'th order oscillator with hyper-chaos....

Airborne particulate concentration during laser hair removal: A comparison between cold sapphire with aqueous gel and cryogen skin cooling.

Science.gov (United States)

Ross, Edward V; Chuang, Gary S; Ortiz, Arisa E; Davenport, Scott A

2018-04-01

High concentrations of sub-micron nanoparticles have been shown to be released during laser hair removal (LHR) procedures. These emissions pose a potential biohazard to healthcare workers that have prolonged exposure to LHR plume. We sought to demonstrate that cold sapphire skin cooling done in contact mode might suppress plume dispersion during LHR. A total of 11 patients were recruited for laser hair removal. They were treated on the legs and axilla with a 755 or 1064 nm millisecond-domain laser equipped with either (i) cryogen spray (CSC); (ii) refrigerated air (RA); or (iii) contact cooling with sapphire (CC). Concentration of ultrafine nanoparticles <1 μm were measured just before and during LHR with the three respective cooling methods. For contact cooling (CC), counts remained at baseline levels, below 3,500 parts per cubic centimeter (ppc) for all treatments. In contrast, the CSC system produced large levels of plume, peaking at times to over 400,000 ppc. The CA cooled system produced intermediate levels of plume, about 35,000 ppc (or about 10× baseline). Cold Sapphire Skin cooling with gel suppresses plume during laser hair removal, potentially eliminating the need for smoke evacuators, custom ventilation systems, and respirators during LHR. Lasers Surg. Med. 50:280-283, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

DEFF Research Database (Denmark)

Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

2010-01-01

We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

Quantifying Heterogeneities in Soil Cover and Weathering in the Bitterroot and Sapphire Mountains, Montana: Implications for Glacial Legacies and their Morphologic Control on Soil Formation

Science.gov (United States)

Benjaram, S. S.; Dixon, J. L.

2017-12-01

To what extent is chemical weathering governed by a landscape's topography? Quantifying chemical weathering in both steep rocky landscapes and soil-mantled landscapes requires describing heterogeneity in soil and rock cover at local and landscape scales. Two neighboring mountain ranges in the northern Rockies of western Montana, USA, provide an ideal natural laboratory in which to investigate the relationship between soil chemical weathering, persistence of soil cover, and topography. We focus our work in the previously glaciated Bitterroot Mountains, which consist of steep, rock-dominated hillslopes, and the neighboring unglaciated Sapphire Mountains, which display convex, soil-mantled hillslopes. Soil thickness measurements, soil and rock geochemistry, and digital terrain analysis reveal that soils in the rock-dominated Bitterroot Mountains are only slightly less weathered than those in the Sapphire Mountains. However, these differences are magnified when adjusted for rock fragments at a local scale and bedrock cover at a landscape scale, using our newly developed metric, the rock-adjusted chemical depletion fraction (RACDF) and rock-adjusted mass transfer coefficient (RA τ). The Bitterroots overall are 30% less weathered than the Sapphires despite higher mean annual precipitation in the former, with an average rock-adjusted CDF of 0.38 in the postglacial Bitterroots catchment and 0.61 in the nonglacial Sapphire catchment, suggesting that 38% of rock mass is lost in the conversion to soil in the Bitterroots, whereas 61% of rock mass is lost in the nonglaciated Sapphires. Because the previously glaciated Bitterroots are less weathered despite being wetter, we conclude that the glacial history of this landscape exerts more influence on soil chemical weathering than does modern climate. However, while previous studies have correlated weathering intensity with topographic parameters such as slope gradient, we find little topographic indication of specific controls

Optical and structural behaviour of Mn implanted sapphire

International Nuclear Information System (INIS)

Marques, C.; Franco, N.; Kozanecki, A.; Silva, R.C. da; Alves, E.

2006-01-01

Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 x 10 17 cm -2 . The samples were annealed at 1000 deg. C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 x 10 16 cm -2 , as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl 2 O 4 . On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission

Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers

Energy Technology Data Exchange (ETDEWEB)

Liu, Tingting; Lei, Hong, E-mail: hong_lei2005@aliyun.com

2017-08-15

Highlights: • The novel Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives were synthesized by seed-introduced method. • The Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives exhibited lower Ra and higher MRR on sapphire during CMP. • The cores SiO{sub 2} were coated by the shells (SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) via chemical bonds and hydrogen bonds. • XPS analysis revealed the solid-state chemical reaction between Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives and sapphire during CMP. - Abstract: Abrasive is one of the most important factors in chemical mechanical polishing (CMP). In order to improve the polishing qualities of sapphire substrates, the novel Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives were prepared by seed-induced growth method. In this work, there were a series of condensation reactions during the synthesis process of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives and the silica cores were coated by shells (which contains SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) via chemical bonds and hydrogen bonds in the Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives, which made the composite abrasives’ core-shell structure more sTable Scanning electron microscopy (SEM) showed that Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives were spherical and uniform in size. And the acting mechanisms of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives on sapphire in CMP were investigated. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis and X-ray photoelectron spectroscopy (XPS) analysis demonstrated that the solid-state chemical reactions between the shells (which contained SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives and the sapphire occurred during the CMP process. Furthermore, Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives exhibited lower surface roughness and

Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

International Nuclear Information System (INIS)

Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

2006-01-01

The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

Science.gov (United States)

Gupta, Pranav

This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

Energy Technology Data Exchange (ETDEWEB)

Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-01

InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

Time domain oscillating poles: Stability redefined in Memristor based Wien-oscillators

KAUST Repository

Talukdar, Abdul Hafiz Ibne

2012-07-28

Traditionally, the necessary and sufficient condition for any system to be oscillating is that its poles are located on the imaginary (jω) axis. In this paper, for the first time, we have shown that systems can oscillate with time-domain oscillating poles. The idea is verified using a Memristor based Wien oscillator. Sustained oscillations are observed without having the poles of the system fixed on the imaginary axis and the oscillating behavior of the system poles is reported. The oscillating resistance and triangular shape of FFT are also demonstrated with mathematical reasoning and simulation results to support the unusual and surprising characteristics. © 2009 IEEE.

Nature's Autonomous Oscillators

Science.gov (United States)

Mayr, H. G.; Yee, J.-H.; Mayr, M.; Schnetzler, R.

2012-01-01

Nonlinearity is required to produce autonomous oscillations without external time dependent source, and an example is the pendulum clock. The escapement mechanism of the clock imparts an impulse for each swing direction, which keeps the pendulum oscillating at the resonance frequency. Among nature's observed autonomous oscillators, examples are the quasi-biennial oscillation and bimonthly oscillation of the Earth atmosphere, and the 22-year solar oscillation. The oscillations have been simulated in numerical models without external time dependent source, and in Section 2 we summarize the results. Specifically, we shall discuss the nonlinearities that are involved in generating the oscillations, and the processes that produce the periodicities. In biology, insects have flight muscles, which function autonomously with wing frequencies that far exceed the animals' neural capacity; Stretch-activation of muscle contraction is the mechanism that produces the high frequency oscillation of insect flight, discussed in Section 3. The same mechanism is also invoked to explain the functioning of the cardiac muscle. In Section 4, we present a tutorial review of the cardio-vascular system, heart anatomy, and muscle cell physiology, leading up to Starling's Law of the Heart, which supports our notion that the human heart is also a nonlinear oscillator. In Section 5, we offer a broad perspective of the tenuous links between the fluid dynamical oscillators and the human heart physiology.

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

2014-09-01

Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

Impact of urban WWTP and CSO fluxes on river peak flow extremes under current and future climate conditions.

Science.gov (United States)

Keupers, Ingrid; Willems, Patrick

2013-01-01

The impact of urban water fluxes on the river system outflow of the Grote Nete catchment (Belgium) was studied. First the impact of the Waste Water Treatment Plant (WWTP) and the Combined Sewer Overflow (CSO) outflows on the river system for the current climatic conditions was determined by simulating the urban fluxes as point sources in a detailed, hydrodynamic river model. Comparison was made of the simulation results on peak flow extremes with and without the urban point sources. In a second step, the impact of climate change scenarios on the urban fluxes and the consequent impacts on the river flow extremes were studied. It is shown that the change in the 10-year return period hourly peak flow discharge due to climate change (-14% to +45%) was in the same order of magnitude as the change due to the urban fluxes (+5%) in current climate conditions. Different climate change scenarios do not change the impact of the urban fluxes much except for the climate scenario that involves a strong increase in rainfall extremes in summer. This scenario leads to a strong increase of the impact of the urban fluxes on the river system.

Oscillating heat pipes

CERN Document Server

Ma, Hongbin

2015-01-01

This book presents the fundamental fluid flow and heat transfer principles occurring in oscillating heat pipes and also provides updated developments and recent innovations in research and applications of heat pipes. Starting with fundamental presentation of heat pipes, the focus is on oscillating motions and its heat transfer enhancement in a two-phase heat transfer system. The book covers thermodynamic analysis, interfacial phenomenon, thin film evaporation,  theoretical models of oscillating motion and heat transfer of single phase and two-phase flows, primary  factors affecting oscillating motions and heat transfer,  neutron imaging study of oscillating motions in an oscillating heat pipes, and nanofluid’s effect on the heat transfer performance in oscillating heat pipes.  The importance of thermally-excited oscillating motion combined with phase change heat transfer to a wide variety of applications is emphasized. This book is an essential resource and learning tool for senior undergraduate, gradua...

Time domain oscillating poles: Stability redefined in Memristor based Wien-oscillators

KAUST Repository

Talukdar, Abdul Hafiz Ibne; Radwan, Ahmed G.; Salama, Khaled N.

2012-01-01

poles. The idea is verified using a Memristor based Wien oscillator. Sustained oscillations are observed without having the poles of the system fixed on the imaginary axis and the oscillating behavior of the system poles is reported. The oscillating

Molecular structures and thermodynamic properties of 12 gaseous cesium-containing species of nuclear safety interest: Cs 2, CsH, CsO, Cs 2O, CsX, and Cs 2X 2 (X = OH, Cl, Br, and I)

Science.gov (United States)

Badawi, Michael; Xerri, Bertrand; Canneaux, Sébastien; Cantrel, Laurent; Louis, Florent

2012-01-01

Ab initio electronic structure calculations at the coupled cluster level with a correction for the triples extrapolated to the complete basis set limit have been made for the estimation of the thermochemical properties of Cs 2, CsH, CsO, Cs 2O, CsX, and Cs 2X 2 (X = OH, Cl, Br, and I). The standard enthalpies of formation and standard molar entropies at 298 K, and the temperature dependence of the heat capacities at constant pressure were evaluated. The calculated thermochemical properties are in good agreement with their literature counterparts. For Cs 2, CsH, CsOH, Cs 2(OH) 2, CsCl, Cs 2Cl 2, CsBr, CsI, and Cs 2I 2, the calculated ΔfH298K∘ values are within chemical accuracy of the most recent experimental values. Based on the excellent agreement observed between our calculated ΔfH298K∘ values and their literature counterparts, the standard enthalpies of formation at 298 K are estimated to be the following: ΔfH298K∘ (CsO) = 17.0 kJ mol -1 and ΔfH298K∘ (Cs 2Br 2) = -575.4 kJ mol -1.

Effect of coating thickness on interfacial shear behavior of zirconia-coated sapphire fibers in a polycrystalline alumina matrix

International Nuclear Information System (INIS)

Hellmann, J.R.; Chou, Y.S.

1995-01-01

The effect of zirconia (ZrO 2 ) interfacial coatings on the interfacial shear behavior in sapphire reinforced alumina was examined in this study. Zirconia coatings of thicknesses ranging from 0.15 to 1.45 μm were applied to single crystal sapphire (Saphikon) fibers using a particulate loaded sol dipping technique. After calcining at 1,100 C in air, the coated fibers were incorporated into a polycrystalline alumina matrix via hot pressing. Interfacial shear strength and sliding behavior of the coated fibers was examined using thin-slice indentation fiber pushout and pushback techniques. In all cases, debonding and sliding occurred at the interface between the fibers and the coating. The coatings exhibited a dense microstructure and led to a higher interfacial shear strength (> 240 MPa) and interfacial sliding stress (> 75 MPa) relative to previous studies on the effect of a porous interphase on interfacial properties. The interfacial shear strength decreased with increasing fiber coating thickness (from 389 ± 59 to 241 ± 43 MPa for 0.15 to 1.45 microm thick coatings, respectively). Sliding behavior exhibited load modulation with increasing displacement during fiber sliding which is characteristic of fiber roughness-induced stick-slip. The high interfacial shear strengths and sliding stresses measured in this study, as well as the potentially strength degrading surface reconstruction observed on the coated fibers after hot pressing and heat treatment, indicate that dense zirconia coatings are not suitable candidates for optimizing composite toughness and strength in the sapphire fiber reinforced alumina system

The active control devices of the size of products based on sapphire measuring tips with three degrees of freedom

Science.gov (United States)

Leun, E. V.; Leun, V. I.; Sysoev, V. K.; Zanin, K. A.; Shulepov, A. V.; Vyatlev, P. A.

2018-01-01

The article presents the results of the calculation of the load capacity of the active control devices (ACD) sapphire tip, which showed nearly 30-fold margin of safety to shock loads and experimental researches in mechanical contact with 5 cogs cutter 15 mm in diameter rotating with a frequency of 1000 rpm, which confirmed the calculations, determined the surface roughness Rz of the contact area of no more than 0.15 μm. Conditions have been created for recording without distortion of the image through a sapphire tip in contact with the processed article. A ACD design with new functionality is proposed: with one, two and three degrees of freedom of the sapphire tip and allows measuring the taper of the article and measurements on the chord. It is shown that with the implementation of their fixed head like the frame of the gyroscope with the rotations around the axes OY and OZ. It is shown that the rotation of the tip around the axis OX can be replaced more convenient for the implementation of the angular offset of the transferred image due to rotation of the output end of the flexible optical waveguide relative to the input. This makes it possible to reduce the "blurring of the image" during registration of the fast moving product profile when the slope of the recorder lines coincides with the slope of the edges of the image elements of the selected moving elements of the article.

Single-crystalline AlN growth on sapphire using physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

2011-02-07

A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

Science.gov (United States)

Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

2016-05-01

The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS

One dimension harmonic oscillator

International Nuclear Information System (INIS)

Cohen-Tannoudji, Claude; Diu, Bernard; Laloe, Franck.

1977-01-01

The importance of harmonic oscillator in classical and quantum physics, eigenvalues and eigenstates of hamiltonian operator are discussed. In complement are presented: study of some physical examples of harmonic oscillators; study of stationnary states in the /x> representation; Hermite polynomials; resolution of eigenvalue equation of harmonic oscillator by polynomial method; isotope harmonic oscillator with three dimensions; charged harmonic oscillator in uniform electric field; quasi classical coherent states of harmonic oscillator; eigenmodes of vibration of two coupled harmonic oscillators; vibration modus of a continuous physical system (application to radiation: photons); vibration modus of indefinite linear chain of coupled harmonic oscillators (phonons); one-dimensional harmonic oscillator in thermodynamic equilibrium at temperature T [fr

Synthesis of single-crystalline Al layers in sapphire

International Nuclear Information System (INIS)

Schlosser, W.; Lindner, J.K.N.; Zeitler, M.; Stritzker, B.

1999-01-01

Single-crystalline, buried aluminium layers were synthesized by 180 keV high-dose Al + ion implantation into sapphire at 500 deg. C. The approximately 70 nm thick Al layers exhibit in XTEM investigations locally abrupt interfaces to the single-crystalline Al 2 O 3 top layer and bulk, while thickness and depth position are subjected to variations. The layers grow by a ripening process of oriented Al precipitates, which at low doses exist at two different orientations. With increasing dose, precipitates with one out of the two orientations are observed to exist preferentially, finally leading to the formation of a single-crystalline layer. Al outdiffusion to the surface and the formation of spherical Al clusters at the surface are found to be competing processes to buried layer formation. The formation of Al layers is described by Rutherford Backscattering Spectroscopy (RBS), Cross-section transmission electron microscopy (XTEM) and Scanning electron microscopy (SEM) studies as a function of dose, temperature and substrate orientation

Reactor oscillator - I - III, Part I; Reaktorski oscilator - I-III, I Deo

Energy Technology Data Exchange (ETDEWEB)

Lolic, B [Institute of Nuclear Sciences Boris Kidric, Laboratorija za fiziku reaktora, Vinca, Beograd (Serbia and Montenegro)

1961-12-15

Project 'Reactor oscillator' covers the following activities: designing reactor oscillators for reactors RA and RB with detailed engineering drawings; constructing and mounting of the oscillator; designing and constructing the appropriate electronic equipment for the oscillator; measurements at the RA and RB reactors needed for completing the oscillator construction.

Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

NARCIS (Netherlands)

Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

2004-01-01

We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

NARCIS (Netherlands)

Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, Markus; Jelinek, M.

2004-01-01

Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

Oscillator monitor

International Nuclear Information System (INIS)

McNeill, G.A.

1981-01-01

Present high-speed data acquisition systems in nuclear diagnostics use high-frequency oscillators to provide timing references for signals recorded on fast, traveling-wave oscilloscopes. An oscillator's sinusoidal wave shape is superimposed on the recorded signal with each cycle representing a fixed time increment. During data analysis the sinusoid is stripped from the signal, leaving a clean signal shape with known timing. Since all signal/time relationships are totally dependant upon working oscillators, these critical devices must have remote verification of proper operation. This manual presents the newly-developed oscillator monitor which will provide the required verification

Power oscillation damping controller

DEFF Research Database (Denmark)

2012-01-01

A power oscillation damping controller is provided for a power generation device such as a wind turbine device. The power oscillation damping controller receives an oscillation indicating signal indicative of a power oscillation in an electricity network and provides an oscillation damping control...

Oscillators - a simple introduction

DEFF Research Database (Denmark)

Lindberg, Erik

2013-01-01

Oscillators are kernel components of electrical and electronic circuits. Discussion of history, mechanisms and design based on Barkhausens observation. Discussion of a Wien Bridge oscillator based on the question: Why does this circuit oscillate ?......Oscillators are kernel components of electrical and electronic circuits. Discussion of history, mechanisms and design based on Barkhausens observation. Discussion of a Wien Bridge oscillator based on the question: Why does this circuit oscillate ?...

Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

Energy Technology Data Exchange (ETDEWEB)

Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1998-03-01

Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Lee, Fang-Wei [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

2016-07-01

Highlights: • Nanoscale patterned sapphire substrate was prepared by anodic-aluminum-oxide etching mask. • Influence of aspect ratio of NPSS on structural and electrical properties of GaN films was studied. • Low dislocation density and high carrier mobility of GaN films were grown on high aspect ratio NPSS. - Abstract: This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 10{sup 8} cm{sup −2} for GaN on bare sapphire to 4.9 × 10{sup 8} cm{sup −2} for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm{sup 2}/Vs for GaN on bare sapphire to 199 cm{sup 2}/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with

Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

Science.gov (United States)

Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

2013-05-01

A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

International Nuclear Information System (INIS)

Sang Ling; Liu Jian-Ming; Xu Xiao-Qing; Wang Jun; Zhao Gui-Juan; Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; Wei Hong-Yuan; Liu Xiang-Lin; Yang Shao-Yan; Zhu Qin-Sheng; Wang Zhan-Guo

2012-01-01

The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on r-sapphire is studied. The influences of V/III ratio and growth temperature on surface morphology are investigated. V-pits and stripes are observed on the surface of a-GaN grown at 1050°C and 1100°C, respectively. The overall orientation and geometry of V-pits are uniform and independent on the V/III molar ratio in the samples grown at 1050°C, while in the samples grown at 1100°C, the areas of stripes decrease with the adding of V/III ratio. We deduce the origin of V-pits and stripes by annealing the buffer layers at different temperatures. Because of the existence of inclined (101-bar1) facets, V-pits are formed at 1050°C. The (101-bar1) plane is an N terminated surface, which is metastable at higher temperature, so stripes instead of V-pits are observed at 1100°C. Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films. Hence, to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire. (condensed matter: structure, mechanical and thermal properties)

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

OpenAIRE

Kohei Ueno; Eiji Kishikawa; Jitsuo Ohta; Hiroshi Fujioka

2017-01-01

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films...

Visible continuum pulses based on enhanced dispersive wave generation for endogenous fluorescence imaging.

Science.gov (United States)

Cui, Quan; Chen, Zhongyun; Liu, Qian; Zhang, Zhihong; Luo, Qingming; Fu, Ling

2017-09-01

In this study, we demonstrate endogenous fluorescence imaging using visible continuum pulses based on 100-fs Ti:sapphire oscillator and a nonlinear photonic crystal fiber. Broadband (500-700 nm) and high-power (150 mW) continuum pulses are generated through enhanced dispersive wave generation by pumping femtosecond pulses at the anomalous dispersion region near zero-dispersion wavelength of high-nonlinear photonic crystal fibers. We also minimize the continuum pulse width by determining the proper fiber length. The visible-wavelength two-photon microscopy produces NADH and tryptophan images of mice tissues simultaneously. Our 500-700 nm continuum pulses support extending nonlinear microscopy to visible wavelength range that is inaccessible to 100-fs Ti:sapphire oscillators and other applications requiring visible laser pulses.

Restoration of oscillation in network of oscillators in presence of direct and indirect interactions

Energy Technology Data Exchange (ETDEWEB)

Majhi, Soumen; Bera, Bidesh K. [Physics and Applied Mathematics Unit, Indian Statistical Institute, Kolkata-700108 (India); Bhowmick, Sourav K. [Department of Electronics, Asutosh College, Kolkata-700026 (India); Ghosh, Dibakar, E-mail: diba.ghosh@gmail.com [Physics and Applied Mathematics Unit, Indian Statistical Institute, Kolkata-700108 (India)

2016-10-23

The suppression of oscillations in coupled systems may lead to several unwanted situations, which requires a suitable treatment to overcome the suppression. In this paper, we show that the environmental coupling in the presence of direct interaction, which can suppress oscillation even in a network of identical oscillators, can be modified by introducing a feedback factor in the coupling scheme in order to restore the oscillation. We inspect how the introduction of the feedback factor helps to resurrect oscillation from various kinds of death states. We numerically verify the resurrection of oscillations for two paradigmatic limit cycle systems, namely Landau–Stuart and Van der Pol oscillators and also in generic chaotic Lorenz oscillator. We also study the effect of parameter mismatch in the process of restoring oscillation for coupled oscillators. - Highlights: • Amplitude death is observed using direct and indirect coupling. • Revival of oscillation using feedback parameter is discussed. • Restoration of oscillation is observed in limit cycle and chaotic systems.

Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

International Nuclear Information System (INIS)

Vetrov, V. N.; Ignatenkov, B. A.

2013-01-01

The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

Oscillations of void lattices

International Nuclear Information System (INIS)

Akhiezer, A.I.; Davydov, L.N.; Spol'nik, Z.A.

1976-01-01

Oscillations of a nonideal crystal are studied, in which macroscopic defects (pores) form a hyperlattice. It is shown that alongside with acoustic and optical phonons (relative to the hyperlattice), in such a crystal oscillations of the third type are possible which are a hydridization of sound oscillations of atoms and surface oscillations of a pore. Oscillation spectra of all three types were obtained

Nonlinear Analysis of Ring Oscillator and Cross-Coupled Oscillator Circuits

KAUST Repository

Ge, Xiaoqing

2010-12-01

Hassan Khalil’s research results and beautifully written textbook on nonlinear systems have influenced generations of researchers, including the authors of this paper. Using nonlinear systems techniques, this paper analyzes ring oscillator and cross-coupled oscillator circuits, which are essential building blocks in digital systems. The paper first investigates local and global stability properties of an n-stage ring oscillator by making use of its cyclic structure. It next studies global stability properties of a class of cross-coupled oscillators which admit the representation of a dynamic system in feedback with a static nonlinearity, and presents su cient conditions for almost global convergence of the solutions to a limit cycle when the feedback gain is in the vicinity of a bifurcation point. The result are also extended to the synchronization of interconnected identical oscillator circuits.

Nonlinear Analysis of Ring Oscillator and Cross-Coupled Oscillator Circuits

KAUST Repository

Ge, Xiaoqing; Arcak, Murat; Salama, Khaled N.

2010-01-01

Hassan Khalil’s research results and beautifully written textbook on nonlinear systems have influenced generations of researchers, including the authors of this paper. Using nonlinear systems techniques, this paper analyzes ring oscillator and cross-coupled oscillator circuits, which are essential building blocks in digital systems. The paper first investigates local and global stability properties of an n-stage ring oscillator by making use of its cyclic structure. It next studies global stability properties of a class of cross-coupled oscillators which admit the representation of a dynamic system in feedback with a static nonlinearity, and presents su cient conditions for almost global convergence of the solutions to a limit cycle when the feedback gain is in the vicinity of a bifurcation point. The result are also extended to the synchronization of interconnected identical oscillator circuits.

Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

Energy Technology Data Exchange (ETDEWEB)

Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

2016-09-15

Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

2016-04-15

In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

Oscillations of disks

CERN Document Server

Kato, Shoji

2016-01-01

This book presents the current state of research on disk oscillation theory, focusing on relativistic disks and tidally deformed disks. Since the launch of the Rossi X-ray Timing Explorer (RXTE) in 1996, many high-frequency quasiperiodic oscillations (HFQPOs) have been observed in X-ray binaries. Subsequently, similar quasi-periodic oscillations have been found in such relativistic objects as microquasars, ultra-luminous X-ray sources, and galactic nuclei. One of the most promising explanations of their origin is based on oscillations in relativistic disks, and a new field called discoseismology is currently developing. After reviewing observational aspects, the book presents the basic characteristics of disk oscillations, especially focusing on those in relativistic disks. Relativistic disks are essentially different from Newtonian disks in terms of several basic characteristics of their disk oscillations, including the radial distributions of epicyclic frequencies. In order to understand the basic processes...

Self-oscillation in spin torque oscillator stabilized by field-like torque

International Nuclear Information System (INIS)

Taniguchi, Tomohiro; Tsunegi, Sumito; Kubota, Hitoshi; Imamura, Hiroshi

2014-01-01

The effect of the field-like torque on the self-oscillation of the magnetization in spin torque oscillator with a perpendicularly magnetized free layer was studied theoretically. A stable self-oscillation at zero field is excited for negative β while the magnetization dynamics stops for β = 0 or β > 0, where β is the ratio between the spin torque and the field-like torque. The reason why only the negative β induces the self-oscillation was explained from the view point of the energy balance between the spin torque and the damping. The oscillation power and frequency for various β were also studied by numerical simulation

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

Science.gov (United States)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

Science.gov (United States)

Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

2018-05-01

High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

Czech Academy of Sciences Publication Activity Database

Musil, Stanislav; Matoušek, Tomáš; Dědina, Jiří

2015-01-01

Roč. 108, JUN (2015), s. 61-67 ISSN 0584-8547 R&D Projects: GA ČR GA14-23532S Grant - others:GA AV ČR(CZ) M200311202 Institutional support: RVO:68081715 Keywords : silver * volatile species generation * sapphire tube atomizer Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.289, year: 2015

Suppression and revival of oscillation in indirectly coupled limit cycle oscillators

International Nuclear Information System (INIS)

Sharma, P.R.; Kamal, N.K.; Verma, U.K.; Suresh, K.; Thamilmaran, K.; Shrimali, M.D.

2016-01-01

Highlights: • The phenomena of suppression and revival of oscillations are studied in indirectly coupled nonlinear oscillators. • The decay parameter and a feedback factor play a crucial role in emergent dynamical behavior of oscillators. • The critical curves for different dynamical regions are obtained analytically using linear stability analysis. • Electronic circuit experiments demonstrate these emergent dynamical states. - Abstract: We study the phenomena of suppression and revival of oscillations in a system of limit cycle oscillators coupled indirectly via a dynamic local environment. The dynamics of the environment is assumed to decay exponentially with time. We show that for appropriate coupling strength, the decay parameter of the environment plays a crucial role in the emergent dynamics such as amplitude death (AD) and oscillation death (OD). We also show that introducing a feedback factor in the diffusion term revives the oscillations in this system. The critical curves for the regions of different emergent states as a function of coupling strength, decay parameter of the environment and feedback factor in the coupling are obtained analytically using linear stability analysis. These results are found to be consistent with the numerics and are also observed experimentally.

Site location and optical properties of Eu implanted sapphire

International Nuclear Information System (INIS)

Marques, C.; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Silva, R.C. da; Alves, E.

2005-01-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 x 10 16 cm -2 . Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 deg. C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 deg. C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements

The Oscillator Principle of Nature

DEFF Research Database (Denmark)

Lindberg, Erik

2012-01-01

Oscillators are found on all levels in Nature. The general oscillator concept is defined and investigated. Oscillators may synchronize into fractal patterns. Apparently oscillators are the basic principle in Nature. The concepts of zero and infinite are discussed. Electronic manmade oscillators...

Automated quantification of apoptosis in B-cell chronic lymphoproliferative disorders: a prognostic variable obtained with the Cell-Dyn Sapphire (Abbott) automated hematology analyzer.

Science.gov (United States)

Fumi, M; Martins, D; Pancione, Y; Sale, S; Rocco, V

2014-12-01

B-chronic lymphocytic leukemia CLL, a neoplastic clonal disorder with monomorphous small B lymphocytes with scanty cytoplasm and clumped chromatin, can be morphologically differentiated in typical and atypical forms with different prognosis: Smudge cells (Gumprecht's shadows) are one of the well-known features of the typical CLL and are much less inconsistent in other different types CLPD. Abbott Cell-Dyn Sapphire uses the fluorescence after staining with the DNA fluorochrome propidium iodide for the measurement of nucleated red blood cells (NRBCs) and nonviable cells (FL3+ cell fraction): We have studied the possible correlation between presence and number of morphologically identifiable smudge cells on smears and the percentage of nonviable cells produced by Cell-Dyn Sapphire. 305 blood samples from 224 patients with B-cell lymphoproliferative disorders and 40 healthy blood donors were analyzed by CBC performed by Cell-Dyn Sapphire, peripheral blood smear, and immunophenotype characterization. FL3+ fraction in CLPD directly correlated with the percentage of smudge cells and is significantly increased in patients with typical B-CLL. This phenomenon is much less evident in patients with atypical/mixed B-CLL and B-NHL. In small laboratories without FCM and cytogenetic, smudge cells%, can be utilized as a preliminary diagnostic and prognostic tool in differential diagnosis of CLPD. © 2014 John Wiley & Sons Ltd.

Are the North Atlantic oscillation and the southern oscillation related in any time-scale?

Energy Technology Data Exchange (ETDEWEB)

Garcia, R.; Ribera, P.; Hernandez, E. [Universidad Complutense de Madrid (Spain). Facultad de Ciencias Fisicas; Gimenoo, L. [Fac. Ciencias, Univ. Vigo, Ourense (Spain)

2000-02-01

The north Atlantic oscillation (NAO) and the southern oscillation (SO) are compared from the standpoint of a possible common temporal scale of oscillation. To do this a cross-spectrum of the temporal series of NAO and SO indices was determined, finding a significant common oscillation of 6-8 years. To assure this finding, both series were decomposed in their main oscillations using singular spectrum analysis (SSA). Resulting reconstructed series of 6-8 years' oscillation were then cross-correlated without and with pre-whitened, the latter being significant. The main conclusion is a possible relationship between a common oscillation of 6-8 years that represents about 20% of the SO variance and about 25% of the NAO variance. (orig.)

Automatic Oscillating Turret.

Science.gov (United States)

1981-03-01

Final Report: February 1978 ZAUTOMATIC OSCILLATING TURRET SYSTEM September 1980 * 6. PERFORMING 01G. REPORT NUMBER .J7. AUTHOR(S) S. CONTRACT OR GRANT...o....e.... *24 APPENDIX P-4 OSCILLATING BUMPER TURRET ...................... 25 A. DESCRIPTION 1. Turret Controls ...Other criteria requirements were: 1. Turret controls inside cab. 2. Automatic oscillation with fixed elevation to range from 20* below the horizontal to

Inverted oscillator

Energy Technology Data Exchange (ETDEWEB)

Yuce, C [Physics Department, Anadolu University, Eskisehir (Turkey); Kilic, A [Physics Department, Anadolu University, Eskisehir (Turkey); Coruh, A [Physics Department, Sakarya University, Sakarya (Turkey)

2006-07-15

The inverted harmonic oscillator problem is investigated quantum mechanically. The exact wavefunction for the confined inverted oscillator is obtained and it is shown that the associated energy eigenvalues are discrete, and the energy is given as a linear function of the quantum number n.

Reactor oscillator - Proposal of the organisation for oscillator operation; Reaktorski oscilator - Predlog organizacije rada na oscilatoru

Energy Technology Data Exchange (ETDEWEB)

Lolic, B; Loloc, B [Institute of Nuclear Sciences Boris Kidric, Laboratorija za fiziku reaktora, Vinca, Beograd (Serbia and Montenegro)

1961-12-15

The organizational structure for operating the reactor with the reactor oscillator describes the duties of the reactor operators; staff responsible for operating the oscillator who are responsible for measurements, preparation of the samples and further treatment of the obtained results.

Kinetics of dissolution of sapphire in melts in the CaO-Al2O3-SiO2 system

Science.gov (United States)

Shaw, Cliff S. J.; Klausen, Kim B.; Mao, Huahai

2018-05-01

The dissolution rate of sapphire in melts in the CAS system of varying silica activity, viscosity and degree of alumina saturation has been determined at 1600 °C and 1.5 GPa. After an initiation period of up to 1800 s, dissolution is controlled by diffusion of cations through the boundary layer adjacent to the dissolving sapphire. The dissolution rate decreases with increasing silica activity, viscosity and molar Al2O3/CaO. The calculated diffusion matrix for each solvent melt shows that CAS 1 and 9 which have molar Al2O3/CaO of 0.33 and 0.6 and dissolution rate constants of 0.65 × 10-6 and 0.59 × 10-6 m/s0.5 have similar directions and magnitudes of diffusive coupling: DCaO-Al2O3 and DAl2O3-CaO are both negative are approximately equal. The solvent with the fastest dissolution rate: CAS 4, which has a rate constant of 1.5 × 10-6 m/s0.5 and Al2O3/CaO of 0.31 has positive DCaO-Al2O3 and negative DAl2O3-CaO and the absolute values vary by a factor of 4. Although many studies show that aluminium is added to the melts via the reaction: Si4+ =Al3+ + 0.5Ca2+ the compositional profiles show that this reaction is not the only one involved in accommodating the aluminium added during sapphire dissolution. Rather, aluminium is incorporated as both tetrahedrally coordinated Al charge balanced by Ca and as aluminium not charge balanced by Ca (termed Alxs). This reaction: AlIV -Ca =Alxs +CaNBO where CaNBO is a non-bridging oxygen associated with calcium, may involve the formation of aluminium triclusters. The shape of the compositional profiles and oxide-oxide composition paths is controlled by the aluminium addition reaction. When Alxs exceeds 2%, CaO diffusion becomes increasingly anomalous and since the bond strength of Alxs correlates with CaO/CaO + Al2O3, the presence of more than 2% Alxs leads to significantly slower dissolution than when Alxs is absent or at low concentration. Thus, dissolution is controlled by diffusion of cations through the boundary layer, but this

Experimental demonstration of revival of oscillations from death in coupled nonlinear oscillators

Energy Technology Data Exchange (ETDEWEB)

Senthilkumar, D. V., E-mail: skumarusnld@gmail.com [School of Physics, Indian Institute of Science Education and Research, Thiruvananthapuram 695016 (India); Centre for Nonlinear Science and Engineering, School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401 (India); Suresh, K. [Department of Physics, Anjalai Ammal-Engineering College, Kovilvenni 614 403, Tamilnadu (India); Centre for Nonlinear Dynamics, Bharathidasan University, Trichy 620024, Tamilnadu (India); Chandrasekar, V. K. [Centre for Nonlinear Science and Engineering, School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401 (India); Zou, Wei [School of Mathematics and Statistics, Huazhong University of Science and Technology, Wuhan 430074 (China); Centre for Mathematical Sciences, Huazhong University of Science and Technology, Wuhan 430074 (China); Dana, Syamal K. [CSIR-Indian Institute of Chemical Biology, Kolkata 700032 (India); Kathamuthu, Thamilmaran [Centre for Nonlinear Dynamics, Bharathidasan University, Trichy 620024, Tamilnadu (India); Kurths, Jürgen [Potsdam Institute for Climate Impact Research, Telegrafenberg, Potsdam D-14415 (Germany); Institute of Physics, Humboldt University Berlin, Berlin D-12489 (Germany); Institute for Complex Systems and Mathematical Biology, University of Aberdeen, Aberdeen AB24 3FX (United Kingdom); Department of Control Theory, Nizhny Novgorod State University, Gagarin Avenue 23, 606950 Nizhny Novgorod (Russian Federation)

2016-04-15

We experimentally demonstrate that a processing delay, a finite response time, in the coupling can revoke the stability of the stable steady states, thereby facilitating the revival of oscillations in the same parameter space where the coupled oscillators suffered the quenching of oscillation. This phenomenon of reviving of oscillations is demonstrated using two different prototype electronic circuits. Further, the analytical critical curves corroborate that the spread of the parameter space with stable steady state is diminished continuously by increasing the processing delay. Finally, the death state is completely wiped off above a threshold value by switching the stability of the stable steady state to retrieve sustained oscillations in the same parameter space. The underlying dynamical mechanism responsible for the decrease in the spread of the stable steady states and the eventual reviving of oscillation as a function of the processing delay is explained using analytical results.

XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5 mol% H 2/Ar) atmosphere

Science.gov (United States)

Achiwawanich, S.; James, B. D.; Liesegang, J.

2008-12-01

Surface effects on Mong Hsu rubies and Kanchanaburi sapphires after heat treatment in a controlled reducing atmosphere (5 mol% H 2/Ar) have been investigated using advanced surface science techniques including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Visual appearance of the gemstones is clearly affected by the heat treatment in a reducing atmosphere. Kanchanaburi sapphires, in particular, exhibit Fe-containing precipitates after the heat treatment which have not been observed in previous studies under an inert atmosphere. Significant correlation between changes in visual appearance of the gemstones and variations in surface concentration of trace elements, especially Ti and Fe are observed. The XPS and ToF-SIMS results suggest that; (1) a reducing atmosphere affects the oxidation state of Fe; (2) dissociation of Fe-Ti interaction may occur during heat treatment.

Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

Science.gov (United States)

Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

2006-10-01

Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

Science.gov (United States)

Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

2016-12-15

We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D2O) in a D2O-H2O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D2O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

Chromospheric oscillations

NARCIS (Netherlands)

Lites, B.W.; Rutten, R.J.; Thomas, J.H.

1995-01-01

We show results from SO/Sacramento Peak data to discuss three issues: (i)--the spatial occurrence of chromospheric 3--min oscillations; (ii)--the validity of Ca II H&K line-center Doppler Shift measurements; (iii)--the signi ?cance of oscillation power and phase at frequencies above 10 mHz.

Nonstationary oscillation of gyrotron backward wave oscillators with cylindrical interaction structure

International Nuclear Information System (INIS)

Chen, Shih-Hung; Chen, Liu

2013-01-01

The nonstationary oscillation of the gyrotron backward wave oscillator (gyro-BWO) with cylindrical interaction structure was studied utilizing both steady-state analyses and time-dependent simulations. Comparisons of the numerical results reveal that the gyro-BWO becomes nonstationary when the trailing field structure completely forms due to the dephasing energetic electrons. The backward propagation of radiated waves with a lower resonant frequency from the trailing field structure interferes with the main internal feedback loop, thereby inducing the nonstationary oscillation of the gyro-BWO. The nonstationary gyro-BWO exhibits the same spectral pattern of modulated oscillations with a constant frequency separation between the central frequency and sidebands throughout the whole system. The frequency separation is found to be scaled with the square root of the maximum field amplitude, thus further demonstrating that the nonstationary oscillation of the gyro-BWO is associated with the beam-wave resonance detuning

Oscillation Baselining and Analysis Tool

Energy Technology Data Exchange (ETDEWEB)

2017-03-27

PNNL developed a new tool for oscillation analysis and baselining. This tool has been developed under a new DOE Grid Modernization Laboratory Consortium (GMLC) Project (GM0072 - “Suite of open-source applications and models for advanced synchrophasor analysis”) and it is based on the open platform for PMU analysis. The Oscillation Baselining and Analysis Tool (OBAT) performs the oscillation analysis and identifies modes of oscillations (frequency, damping, energy, and shape). The tool also does oscillation event baselining (fining correlation between oscillations characteristics and system operating conditions).

Formation of metal nanoparticles of various sizes in plasma plumes produced by Ti:sapphire laser pulses

International Nuclear Information System (INIS)

Chakravarty, U.; Naik, P. A.; Mukherjee, C.; Kumbhare, S. R.; Gupta, P. D.

2010-01-01

In this paper, an experimental study on generation of nanoparticle various sizes using Ti:sapphire laser pulses, is reported. Nanoparticle formation in plasma plumes of metals like silver and copper, expanding in vacuum, has been studied using stretched pulses of 300 ps duration [subnanoseconds (sub-ns)] from a Ti:sapphire laser. It has been compared with the nanoparticle formation (of the same materials) when compressed pulses of 45 fs duration were used under similar focusing conditions. Nanoparticle formation is observed at intensities as high as 2x10 16 W/cm 2 . The structural analysis of the nanoparticle deposition on a silicon substrate showed that, using 45 fs pulses, smaller nanoparticles of average size ∼20 nm were generated, whereas on using the sub-ns pulses, larger particles were produced. Also, the visible light transmission and reflection from the nanoparticle film of Ag on glass substrate showed surface plasmon resonance (SPR). The SPR curves of the films of nanoparticles deposited by femtosecond pulses were always broader and reflection/transmission was always smaller when compared with the films formed using the sub-ns pulses, indicating smaller size particle formation by ultrashort pulses. Thus, it has been demonstrated that variation in the laser pulse duration of laser offers a simple tool for varying the size of the nanoparticles generated in plasma plumes.

Neutrino oscillations in matter

International Nuclear Information System (INIS)

Mikheyev, S.P.; Smirnov, A.Yu.

1986-01-01

In this paper we describe united formalism of ν-oscillations for different regimes, which is immediate generalization of vacuum oscillations theory. Adequate graphical representation of this formalism is given. We summarize main properties of ν-oscillations for different density distributions. (orig./BBOE)

Design of patterned sapphire substrates for GaN-based light-emitting diodes

International Nuclear Information System (INIS)

Wang Hai-Yan; Lin Zhi-Ting; Han Jing-Lei; Zhong Li-Yi; Li Guo-Qiang

2015-01-01

A new method for patterned sapphire substrate (PSS) design is developed and proven to be reliable and cost-effective. As progress is made with LEDs’ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs’ light extraction efficiency (LEE). Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years. (topical review)

Numerical simulation of terahertz-wave propagation in photonic crystal waveguide based on sapphire shaped crystal

International Nuclear Information System (INIS)

Zaytsev, Kirill I; Katyba, Gleb M; Mukhina, Elena E; Kudrin, Konstantin G; Karasik, Valeriy E; Yurchenko, Stanislav O; Kurlov, Vladimir N; Shikunova, Irina A; Reshetov, Igor V

2016-01-01

Terahertz (THz) waveguiding in sapphire shaped single crystal has been studied using the numerical simulations. The numerical finite-difference analysis has been implemented to characterize the dispersion and loss in the photonic crystalline waveguide containing hollow cylindrical channels, which form the hexagonal lattice. Observed results demonstrate the ability to guide the THz-waves in multi-mode regime in wide frequency range with the minimal power extinction coefficient of 0.02 dB/cm at 1.45 THz. This shows the prospectives of the shaped crystals for highly-efficient THz waveguiding. (paper)

The colpitts oscillator family

DEFF Research Database (Denmark)

Lindberg, Erik; Murali, K.; Tamasevicius, A.

A tutorial study of the Colpitts oscillator family defined as all oscillators based on a nonlinear amplifier and a three- terminal linear resonance circuit with one coil and two capacitors. The original patents are investigated. The eigenvalues of the linearized Jacobian for oscillators based...

Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by Using Ultra-violet Laser Lift-Of Techniques

International Nuclear Information System (INIS)

Wei-Hua, Chen; Xiao-Dong, Hu; Xiang-Ning, Kang; Xu-Rong, Zhou; Xiao-Min, Zhang; Tong-Jun, Yu; Zhi-Jian, Yang; Ke, Xu; Guo-Yi, Zhang; Xu-Dong, Shan; Li-Ping, You

2009-01-01

Ultra-violet (KrF excimer laser, λ = 248 nm) laser lift-of (LLO) techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation induced by the ultra-violet laser lift-of (UV-LLO) has been characterized by micro-Raman spectroscopy, micro-photoluminescence, along with high-resolution transmission electron microscopy (HRTEM). HRTEM indicates that UV-LLO induced phase transition takes place above the LLO interface, without phase transition under the LLO interface. The formed cubic GaN often exists as nanocrystal grains attaching on the bulk hexagonal GaN. The half-loop-cluster-like UV-LLO interface indicates that the LLO-induced shock waves has generated and played an assistant role in the decomposition of the hexagonal GaN and in the formation of cubic GaN grains at the LLO surface

XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5 mol% H{sub 2}/Ar) atmosphere

Energy Technology Data Exchange (ETDEWEB)

Achiwawanich, S. [Department of Physics, La Trobe University, VIC 3086 (Australia); Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia); James, B.D. [Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia); Department of Chemistry, La Trobe University, VIC 3086 (Australia); Liesegang, J. [Department of Physics, La Trobe University, VIC 3086 (Australia); Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia)], E-mail: J.Liesegang@latrobe.edu.au

2008-12-30

Surface effects on Mong Hsu rubies and Kanchanaburi sapphires after heat treatment in a controlled reducing atmosphere (5 mol% H{sub 2}/Ar) have been investigated using advanced surface science techniques including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Visual appearance of the gemstones is clearly affected by the heat treatment in a reducing atmosphere. Kanchanaburi sapphires, in particular, exhibit Fe-containing precipitates after the heat treatment which have not been observed in previous studies under an inert atmosphere. Significant correlation between changes in visual appearance of the gemstones and variations in surface concentration of trace elements, especially Ti and Fe are observed. The XPS and ToF-SIMS results suggest that; (1) a reducing atmosphere affects the oxidation state of Fe; (2) dissociation of Fe-Ti interaction may occur during heat treatment.

Bounded-oscillation Pushdown Automata

Directory of Open Access Journals (Sweden)

Pierre Ganty

2016-09-01

Full Text Available We present an underapproximation for context-free languages by filtering out runs of the underlying pushdown automaton depending on how the stack height evolves over time. In particular, we assign to each run a number quantifying the oscillating behavior of the stack along the run. We study languages accepted by pushdown automata restricted to k-oscillating runs. We relate oscillation on pushdown automata with a counterpart restriction on context-free grammars. We also provide a way to filter all but the k-oscillating runs from a given PDA by annotating stack symbols with information about the oscillation. Finally, we study closure properties of the defined class of languages and the complexity of the k-emptiness problem asking, given a pushdown automaton P and k >= 0, whether P has a k-oscillating run. We show that, when k is not part of the input, the k-emptiness problem is NLOGSPACE-complete.

Molecular dynamics simulation of electron trapping in the sapphire lattice

International Nuclear Information System (INIS)

Rambaut, C.; Oh, K.H.; Fayeulle, S.; Kohanoff, J.

1995-10-01

Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge mode. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (α -Al 2 O 3 ) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5 A. Detrapping is observed at 250 K. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature. (author). 18 refs, 7 figs, 2 tabs

The SAPPHIRE and 50 MT projects at BWXT, Lynchburg, VA

International Nuclear Information System (INIS)

Thiele, R.; Horn, B.; Coates, C.W.; Stainback, J.R.

2001-01-01

Full text: When the SAPPHIRE project for the down-blending of HEU material of Khazak origin was initiated in 1996 at BWX Technologies (BWXT) formally Babcock and Wilcox in Lynchburg, VA and the Agency was requested to apply its specially designed safeguards measures to the process with a view to provide assurance to the international community that down-blending had actually taken place as stipulated in the USA-Khazak agreement a learning process was initiated from this effort culminating in the current 50 MT downblending process at the same facility with BWXT, the USA Authorities, and the Agency as partners in this technologically advanced enterprise aimed at the downgrading of a substantial quantity of weapons grade material. In the present paper an overview is provided of the road leading to an effective, and mutually agreeable safeguards approach for carrying out verifications in the sensitive environment of a facility devoted to HEU uranium processing. (author)

Femtosecond laser micromachining of sapphire capillaries for laser-wakefield acceleration

Energy Technology Data Exchange (ETDEWEB)

Messner, Philipp; Delbos, Niels Matthias; Maier, Andreas R. [CFEL, Center for Free-Electron Laser Science, 22607 Hamburg (Germany); University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany); Calmano, Thomas [University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany)

2015-07-01

Laser-plasma accelerator are promising candidates to provide ultra-relativistic electron beams for compact light sources. One factor that limits the achievable electron beam energy in a laser plasma accelerator is the Rayleigh length of the driver laser, which dictates the length over which the electron beams can effectively be accelerated. To overcome this limitation lasers can be guided in a capillary waveguide to extend the acceleration length beyond the Rayleigh length. The production of waveguide structures on scales, that are suitable for plasma acceleration is very challenging. Here, we present experimental results from waveguide machining in sapphire crystals using a Clark MXR CPA 2010 laser with a wavelength of 775nm, 1KHZ repetition rate and a pulse duration of 160 fs. We discuss the effects of different parameters like energy, lens types, writing speed and polarisation on the size and shape of the capillaries, and compare the performance of different parameter sets.

Magnetically Coupled Magnet-Spring Oscillators

Science.gov (United States)

Donoso, G.; Ladera, C. L.; Martin, P.

2010-01-01

A system of two magnets hung from two vertical springs and oscillating in the hollows of a pair of coils connected in series is a new, interesting and useful example of coupled oscillators. The electromagnetically coupled oscillations of these oscillators are experimentally and theoretically studied. Its coupling is electromagnetic instead of…

The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

Energy Technology Data Exchange (ETDEWEB)

Alexeev, P., E-mail: pavel.alexeev@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany); Asadchikov, V. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Bessas, D. [European Synchrotron Radiation Facility (France); Butashin, A.; Deryabin, A. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Dill, F.-U.; Ehnes, A.; Herlitschke, M. [Deutsches Elektronen-Synchrotron DESY (Germany); Hermann, R. P.; Jafari, A. [JARA-FIT, Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI (Germany); Prokhorov, I. [Kaluga Branch of Shubnikov Institute of Crystallography RAS, Research Center for Space Materials Science (Russian Federation); Roshchin, B. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Röhlsberger, R.; Schlage, K.; Sergueev, I.; Siemens, A.; Wille, H.-C., E-mail: hans.christian.wille@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany)

2016-12-15

We report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on Mössbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with {sup 119}Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. The device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like {sup 151}Eu, {sup 149}Sm, {sup 161}Dy, {sup 125}Te and {sup 121}Sb.

Memristor-based reactance-less oscillator

KAUST Repository

Zidan, Mohammed A.; Omran, Hesham; Radwan, Ahmed G.; Salama, Khaled N.

2012-01-01

The first reactance-less oscillator is introduced. By using a memristor, the oscillator can be fully implemented on-chip without the need for any capacitors or inductors, which results in an area-efficient fully integrated solution. The concept of operation of the proposed oscillator is explained and detailed mathematical analysis is introduced. Closed-form expressions for the oscillation frequency and oscillation conditions are derived. Finally, the derived equations are verified with circuit simulations showing excellent agreement. © 2011 The Institution of Engineering and Technology.

Memristor-based reactance-less oscillator

KAUST Repository

Zidan, Mohammed A.

2012-10-02

The first reactance-less oscillator is introduced. By using a memristor, the oscillator can be fully implemented on-chip without the need for any capacitors or inductors, which results in an area-efficient fully integrated solution. The concept of operation of the proposed oscillator is explained and detailed mathematical analysis is introduced. Closed-form expressions for the oscillation frequency and oscillation conditions are derived. Finally, the derived equations are verified with circuit simulations showing excellent agreement. © 2011 The Institution of Engineering and Technology.

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

Energy Technology Data Exchange (ETDEWEB)

Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

1996-02-11

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

International Nuclear Information System (INIS)

Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

1996-01-01

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

Response of Seven Crystallographic Orientations of Sapphire Crystals to Shock Stresses of 16 to 86 GPa

OpenAIRE

Kanel, G. I.; Nellis, W. J.; Savinykh, A. S.; Razorenov, S. V.; Rajendran, A. M.

2009-01-01

Shock-wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations were measured with time-resolved VISAR interferometry at shock stresses in the range 16 to 86 GPa. Shock propagation was normal to the surface of each cut. The angle between the c-axis of the hexagonal crystal structure and the direction of shock propagation varied from 0 for c-cut up to 90 degrees for m-cut in the basal plane. Based on published shock-induced transparencies, shock-induced optical ...

A theory of generalized Bloch oscillations

International Nuclear Information System (INIS)

Duggen, Lars; Lassen, Benny; Lew Yan Voon, L C; Willatzen, Morten

2016-01-01

Bloch oscillations of electrons are shown to occur for cases when the energy spectrum does not consist of the traditional evenly-spaced ladders and the potential gradient does not result from an external electric field. A theory of such generalized Bloch oscillations is presented and an exact calculation is given to confirm this phenomenon. Our results allow for a greater freedom of design for experimentally observing Bloch oscillations. For strongly coupled oscillator systems displaying Bloch oscillations, it is further demonstrated that reordering of oscillators leads to destruction of Bloch oscillations. We stipulate that the presented theory of generalized Bloch oscillations can be extended to other systems such as acoustics and photonics. (paper)

Reactor oscillator - I - III, Part I

International Nuclear Information System (INIS)

Lolic, B.

1961-12-01

Project 'Reactor oscillator' covers the following activities: designing reactor oscillators for reactors RA and RB with detailed engineering drawings; constructing and mounting of the oscillator; designing and constructing the appropriate electronic equipment for the oscillator; measurements at the RA and RB reactors needed for completing the oscillator construction

Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

Energy Technology Data Exchange (ETDEWEB)

Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

2016-06-06

This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

Neutrino Oscillation Physics

International Nuclear Information System (INIS)

Kayser, Boris

2014-01-01

To complement the neutrino-physics lectures given at the 2011 International School on Astro Particle Physics devoted to Neutrino Physics and Astrophysics (ISAPP 2011; Varenna, Italy), at the 2011 European School of High Energy Physics (ESHEP 2011; Cheila Gradistei, Romania), and, in modified form, at other summer schools, we present here a written description of the physics of neutrino oscillation. This description is centered on a new way of deriving the oscillation probability. We also provide a brief guide to references relevant to topics other than neutrino oscillation that were covered in the lectures

Oscillator, neutron modulator

International Nuclear Information System (INIS)

Agaisse, R.; Leguen, R.; Ombredane, D.

1960-01-01

The authors present a mechanical device and an electronic control circuit which have been designed to sinusoidally modulate the reactivity of the Proserpine atomic pile. The mechanical device comprises an oscillator and a mechanism assembly. The oscillator is made of cadmium blades which generate the reactivity oscillation. The mechanism assembly comprises a pulse generator for cycle splitting, a gearbox and an engine. The electronic device comprises or performs pulse detection, an on-off device, cycle pulse shaping, phase separation, a dephasing amplifier, electronic switches, counting scales, and control devices. All these elements are briefly presented

Neutrino Oscillation Physics

Energy Technology Data Exchange (ETDEWEB)

Kayser, Boris [Fermilab (United States)

2014-07-01

To complement the neutrino-physics lectures given at the 2011 International School on Astro Particle Physics devoted to Neutrino Physics and Astrophysics (ISAPP 2011; Varenna, Italy), at the 2011 European School of High Energy Physics (ESHEP 2011; Cheila Gradistei, Romania), and, in modified form, at other summer schools, we present here a written description of the physics of neutrino oscillation. This description is centered on a new way of deriving the oscillation probability. We also provide a brief guide to references relevant to topics other than neutrino oscillation that were covered in the lectures.

OSCILLATING FILAMENTS. I. OSCILLATION AND GEOMETRICAL FRAGMENTATION

Energy Technology Data Exchange (ETDEWEB)

Gritschneder, Matthias; Heigl, Stefan; Burkert, Andreas, E-mail: gritschm@usm.uni-muenchen.de [University Observatory Munich, LMU Munich, Scheinerstrasse 1, D-81679 Munich (Germany)

2017-01-10

We study the stability of filaments in equilibrium between gravity and internal as well as external pressure using the grid-based AMR code RAMSES. A homogeneous, straight cylinder below a critical line mass is marginally stable. However, if the cylinder is bent, such as with a slight sinusoidal perturbation, an otherwise stable configuration starts to oscillate, is triggered into fragmentation, and collapses. This previously unstudied behavior allows a filament to fragment at any given scale, as long as it has slight bends. We call this process “geometrical fragmentation.” In our realization, the spacing between the cores matches the wavelength of the sinusoidal perturbation, whereas up to now, filaments were thought to be only fragmenting on the characteristic scale set by the mass-to-line ratio. Using first principles, we derive the oscillation period as well as the collapse timescale analytically. To enable a direct comparison with observations, we study the line-of-sight velocity for different inclinations. We show that the overall oscillation pattern can hide the infall signature of cores.

N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

Science.gov (United States)

Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

2018-01-01

The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

Science.gov (United States)

Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

2018-03-01

Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

Science.gov (United States)

Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

2011-05-01

The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

Free oscillation of the Earth

Directory of Open Access Journals (Sweden)

Y. Abedini

2000-06-01

Full Text Available   This work is a study of the Earths free oscillations considering a merge of solid and liquid model. At the turn of 19th century Geophysicists presented the theory of the free oscillations for a self-gravitating, isotropic and compressible sphere. Assuming a steel structure for an Earth size sphere, they predicted a period of oscillation of about 1 hour. About 50 years later, the free oscillations of stars was studied by Cowling and others. They classified the oscillation modes of the stars into acoustic and gravity modes on the basis of their driving forces. These are pressure and buoyancy forces respectively. The earliest measurements for the period of the free oscillations of the Earth was made by Benyove from a study of Kamchathca earthquake. Since then, the Geophysicists have been trying to provide a theoretical basis for these measurements. Recently, the theory concerning oscillations of celestial fluids is extended by Sobouti to include the possible oscillations of the Earthlike bodies. Using the same technique, we study the free oscillations of a spherically symmetric, non-rotating and elastic model for the Earth.   We used the actual data of the Earths interior structure in our numerical calculations. Numerical results show that there exist three distinct oscillation modes namely acoustic, gravity and toroidal modes. These modes are driven by pressure, buoyancy and shear forces respectively. The shear force is due to the elastic properties of the solid part of the Earth. Our numerical results are consistent with the seismic data recorded from earthquake measurements.

Driven, autoresonant three-oscillator interactions

International Nuclear Information System (INIS)

Yaakobi, O.; Friedland, L.; Henis, Z.

2007-01-01

An efficient control scheme of resonant three-oscillator interactions using an external chirped frequency drive is suggested. The approach is based on formation of a double phase-locked (autoresonant) state in the system, as the driving oscillation passes linear resonance with one of the interacting oscillators. When doubly phase locked, the amplitudes of the oscillators increase with time in proportion to the driving frequency deviation from the linear resonance. The stability of this phase-locked state and the effects of dissipation and of the initial three-oscillator frequency mismatch on the autoresonance are analyzed. The associated autoresonance threshold phenomenon in the driving amplitude is also discussed. In contrast to other nonlinear systems, driven, autoresonant three-oscillator excitations are independent of the sign of the driving frequency chirp rate

Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

2014-02-15

Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

Self-Synchronized Phenomena Generated in Rotor-Type Oscillators: On the Influence of Coupling Condition between Oscillators

Science.gov (United States)

Bonkobara, Yasuhiro; Mori, Hiroki; Kondou, Takahiro; Ayabe, Takashi

Self-synchronized phenomena generated in rotor-type oscillators mounted on a straight-line spring-mass system are investigated experimentally and analytically. In the present study, we examine the occurrence region and pattern of self-synchronization in two types of coupled oscillators: rigidly coupled oscillators and elastically coupled oscillators. It is clarified that the existence regions of stable solutions are governed mainly by the linear natural frequency of each spring-mass system. The results of numerical analysis confirm that the self-synchronized solutions of the elastically coupled oscillators correspond to those of the rigidly coupled oscillators. In addition, the results obtained in the present study are compared with the previously reported results for a metronome system and a moving apparatus and the different properties of the phenomena generated in the rotor-type oscillators and the pendulum-type oscillators are shown in terms of the construction of branches of self-synchronized solution and the stability.

Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

CERN Document Server

Kiselev, A N; Skupov, V D; Filatov, D O

2001-01-01

The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

Science.gov (United States)

Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

1988-01-01

Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

Zero-point oscillations, zero-point fluctuations, and fluctuations of zero-point oscillations

International Nuclear Information System (INIS)

Khalili, Farit Ya

2003-01-01

Several physical effects and methodological issues relating to the ground state of an oscillator are considered. Even in the simplest case of an ideal lossless harmonic oscillator, its ground state exhibits properties that are unusual from the classical point of view. In particular, the mean value of the product of two non-negative observables, kinetic and potential energies, is negative in the ground state. It is shown that semiclassical and rigorous quantum approaches yield substantially different results for the ground state energy fluctuations of an oscillator with finite losses. The dependence of zero-point fluctuations on the boundary conditions is considered. Using this dependence, it is possible to transmit information without emitting electromagnetic quanta. Fluctuations of electromagnetic pressure of zero-point oscillations are analyzed, and the corresponding mechanical friction is considered. This friction can be viewed as the most fundamental mechanism limiting the quality factor of mechanical oscillators. Observation of these effects exceeds the possibilities of contemporary experimental physics but almost undoubtedly will be possible in the near future. (methodological notes)

Brain Oscillations, Hypnosis, and Hypnotizability.

Science.gov (United States)

Jensen, Mark P; Adachi, Tomonori; Hakimian, Shahin

2015-01-01

This article summarizes the state-of-science knowledge regarding the associations between hypnosis and brain oscillations. Brain oscillations represent the combined electrical activity of neuronal assemblies, usually measured as specific frequencies representing slower (delta, theta, alpha) and faster (beta, gamma) oscillations. Hypnosis has been most closely linked to power in the theta band and changes in gamma activity. These oscillations are thought to play a critical role in both the recording and recall of declarative memory and emotional limbic circuits. The authors propose that this role may be the mechanistic link between theta (and perhaps gamma) oscillations and hypnosis, specifically, that the increases in theta oscillations and changes in gamma activity observed with hypnosis may underlie some hypnotic responses. If these hypotheses are supported, they have important implications for both understanding the effects of hypnosis and for enhancing response to hypnotic treatments.

Single ICCII Sinusoidal Oscillators Employing Grounded Capacitors

Directory of Open Access Journals (Sweden)

J. W. Horng

2011-09-01

Full Text Available Two inverting second-generation current conveyors (ICCII based sinusoidal oscillators are presented. The first sinusoidal oscillator is composed of one ICCII, two grounded capacitors and two resistors. The oscillation condition and oscillation frequency can be orthogonally controllable. The second sinusoidal oscillator is composed of one ICCII, two grounded capacitors and three resistors. The oscillation condition and oscillation frequency can be independently controllable through different resistors.

Noise measurements on NbN thin films with a negative temperature resistance coefficient deposited on sapphire and on SiO2

NARCIS (Netherlands)

Leroy, G.; Gest, J.; Vandamme, L.K.J.; Bourgeois, O.

2007-01-01

We characterize granular NbNx thin cermet films deposited on either sapphire substrate or on SiO2 and compare the 1/f noise at 300 K and 80 K. The films were characterized with an impedance analyzer from 20 Hz to 1 MHz and analyzed as a resistor R in parallel with a capacitor C. The calculated noise

The study on pressure oscillation and heat transfer characteristics of oscillating capillary tube heat pipe

International Nuclear Information System (INIS)

Kim, Jong Soo; Bui, Ngoc Hung; Jung, Hyun Seok; Lee, Wook Hyun

2003-01-01

In the present study, the characteristics of pressure oscillation and heat transfer performance in an oscillating capillary tube heat pipe were experimentally investigated with respect to the heat flux, the charging ratio of working fluid, and the inclination angle to the horizontal orientation. The experimental results showed that the frequency of pressure oscillation was between 0.1 Hz and 1.5 Hz at the charging ratio of 40 vol.%. The saturation pressure of working fluid in the oscillating capillary tube heat pipe increased as the heat flux was increased. Also, as the charging ratio of working fluid was increased, the amplitude of pressure oscillation increased. When the pressure waves were symmetric sinusoidal waves at the charging ratios of 40 vol.% and 60 vol.%, the heat transfer performance was improved. At the charging ratios of 20 vol.% and 80 vol.%, the waveforms of pressure oscillation were more complicated, and the heat transfer performance reduced. At the charging ratio of 40 vol.%, the heat transfer performance of the OCHP was at the best when the inclination angle was 90 .deg., the pressure wave was a sinusoidal waveform, the pressure difference was at the least, the oscillation amplitude was at the least, and the frequency of pressure oscillation was the highest

Bimodal oscillations in nephron autoregulation

DEFF Research Database (Denmark)

Sosnovtseva, Olga; Pavlov, A.N.; Mosekilde, Erik

2002-01-01

The individual functional unit of the kidney (the nephron) displays oscillations in its pressure and flow regulation at two different time scales: fast oscillations associated with a myogenic dynamics of the afferent arteriole, and slower oscillations arising from a delay in the tubuloglomerular ...

Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

International Nuclear Information System (INIS)

Kulinich, S.A.; Yoshida, T.; Yamamoto, H.; Terashima, K.

2003-01-01

We report the deposition of LiNb 1-x Ta x O 3 (0≤x≤1) films on (001) sapphire substrates in soft vacuum using a radio frequency thermal plasma. The growth rate, crystallinity, c-axis orientation, and surface roughness were examined as functions of substrate temperature, precursor feed rate, and substrate surface condition. The film Nb/Ta ratio was well controlled by using an appropriate uniform mixture of lithium-niobium and lithium-tantalum alkoxide solutions. The epitaxy and crystallinity of the films were much improved when the film growth rate was raised from 20 to 180-380 nm/min, where the films with the (006) rocking curve full width at half maximum values as low as 0.12 deg. -0.2 deg. could be produced. The film roughness could be reduced by using a liquid precursor with higher metal concentrations, achieving the root-mean-square value on the order of 5 nm. The refractive indices of the films are in good correspondence with their composition and crystallinity

Case for neutrino oscillations

International Nuclear Information System (INIS)

Ramond, P.

1982-01-01

The building of a machine capable of producing an intense, well-calibrated beam of muon neutrinos is regarded by particle physicists with keen interest because of its ability of studying neutrino oscillations. The possibility of neutrino oscillations has long been recognized, but it was not made necessary on theoretical or experimental grounds; one knew that oscillations could be avoided if neutrinos were massless, and this was easily done by the conservation of lepton number. The idea of grand unification has led physicists to question the existence (at higher energies) of global conservation laws. The prime examples are baryon-number conservation, which prevents proton decay, and lepton-number conservation, which keeps neutrinos massless, and therefore free of oscillations. The detection of proton decay and neutrino oscillations would therefore be an indirect indication of the idea of Grand Unification, and therefore of paramount importance. Neutrino oscillations occur when neutrinos acquire mass in such a way that the neutrino mass eigenstates do not match the (neutrino) eigenstates produced by the weak interactions. We shall study the ways in which neutrinos can get mass, first at the level of the standard SU 2 x U 1 model, then at the level of its Grand Unification Generalizations

Anharmonic oscillator and Bogoliubov transformation

International Nuclear Information System (INIS)

Pattnayak, G.C.; Torasia, S.; Rath, B.

1990-01-01

The anharmonic oscillator occupies a cornerstone in many problems in physics. It was observed that none of the authors have tested Bogoliubov transformation to study anharmonic oscillator. The groundstate energy of the anharmonic oscillator is studied using Bogoliubov transformation and the results presented. (author)

Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2013-09-01

Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

Observation and analysis of oscillations in linear accelerators

International Nuclear Information System (INIS)

Seeman, J.T.

1991-11-01

This report discusses the following on oscillation in linear accelerators: Betatron Oscillations; Betatron Oscillations at High Currents; Transverse Profile Oscillations; Transverse Profile Oscillations at High Currents.; Oscillation and Profile Transient Jitter; and Feedback on Transverse Oscillations

Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

International Nuclear Information System (INIS)

Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

2013-01-01

We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

Continuously tunable pulsed Ti:Sa laser self-seeded by an extended grating cavity

CERN Document Server

Li, Ruohong; Rothe, Sebastian; Teigelhöfer, Andrea; Mostamand, Maryam

2016-01-01

A continuously tunable titanium:sapphire (Ti:Sa) laser self-seeded by an extended grating cavity was demonstrated and characterized. By inserting a partially reflecting mirror inside the cavity of a classic single-cavity grating laser, two oscillators are created: a broadband power oscillator, and a narrowband oscillator with a prism beam expander and a diffraction grating in Littrow configuration. By coupling the grating cavity oscillation into the power oscillator, a power-enhanced narrow-linewidth laser oscillation is achieved. Compared to the classic grating laser, this simple modification significantly increases the laser output power without considerably broadening the linewidth. With most of the oscillating laser power confined inside the broadband power cavity and lower power incident onto the grating, the new configuration also allows higher pump power, which is typically limited by the thermal deformation of the grating coating at high oscillation power.

Modeling nonlinearities in MEMS oscillators.

Science.gov (United States)

Agrawal, Deepak K; Woodhouse, Jim; Seshia, Ashwin A

2013-08-01

We present a mathematical model of a microelectromechanical system (MEMS) oscillator that integrates the nonlinearities of the MEMS resonator and the oscillator circuitry in a single numerical modeling environment. This is achieved by transforming the conventional nonlinear mechanical model into the electrical domain while simultaneously considering the prominent nonlinearities of the resonator. The proposed nonlinear electrical model is validated by comparing the simulated amplitude-frequency response with measurements on an open-loop electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. Next, the essential nonlinearities in the oscillator circuit are investigated and a mathematical model of a MEMS oscillator is proposed that integrates the nonlinearities of the resonator. The concept is illustrated for MEMS transimpedance-amplifier- based square-wave and sine-wave oscillators. Closed-form expressions of steady-state output power and output frequency are derived for both oscillator models and compared with experimental and simulation results, with a good match in the predicted trends in all three cases.

Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

Energy Technology Data Exchange (ETDEWEB)

Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yuan, Shu; Liu, Yingce [Quantum Wafer Inc., Foshan 528251 (China); Guo, L. Jay [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Sheng, E-mail: victor_liu63@126.com [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); Ding, Han [State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

2015-11-15

Graphical abstract: - Highlights: • TEM is used to characterize threading dislocation existing in GaN epitaxial layer. • Effect of threading dislocation on optical and electrical of LEDs is discussed. • Strip-shaped SiO{sub 2} DCBL is designed to improve current spreading performance of LEDs. - Abstract: We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO{sub 2} distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO{sub 2} DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO{sub 2} DCBL, light output power of high power PSS-LED chip could be further increased by 13%.

On the mechanism of oscillations in neutrophils

DEFF Research Database (Denmark)

Brasen, Jens Christian; Barington, Torben; Olsen, Lars Folke

2010-01-01

We have investigated the regulation of the oscillatory generation of H(2)O(2) and oscillations in shape and size in neutrophils in suspension. The oscillations are independent of cell density and hence do not represent a collective phenomena. Furthermore, the oscillations are independent...... of the external glucose concentration and the oscillations in H(2)O(2) production are 180 degrees out of phase with the oscillations in NAD(P)H. Cytochalasin B blocked the oscillations in shape and size whereas it increased the period of the oscillations in H(2)O(2) production. 1- and 2-butanol also blocked...... the oscillations in shape and size, but only 1-butanol inhibited the oscillations in H(2)O(2) production. We conjecture that the oscillations are likely to be due to feedback regulations in the signal transduction cascade involving phosphoinositide 3-kinases (PI3K). We have tested this using a simple mathematical...

Primordial oscillations in life: Direct observation of glycolytic oscillations in individual HeLa cervical cancer cells

Science.gov (United States)

Amemiya, Takashi; Shibata, Kenichi; Itoh, Yoshihiro; Itoh, Kiminori; Watanabe, Masatoshi; Yamaguchi, Tomohiko

2017-10-01

We report the first direct observation of glycolytic oscillations in HeLa cervical cancer cells, which we regard as primordial oscillations preserved in living cells. HeLa cells starved of glucose or both glucose and serum exhibited glycolytic oscillations in nicotinamide adenine dinucleotide (NADH), exhibiting asynchronous intercellular behaviors. Also found were spatially homogeneous and inhomogeneous intracellular NADH oscillations in the individual cells. Our results demonstrate that starved HeLa cells may be induced to exhibit glycolytic oscillations by either high-uptake of glucose or the enhancement of a glycolytic pathway (Crabtree effect or the Warburg effect), or both. Their asynchronous collective behaviors in the oscillations were probably due to a weak intercellular coupling. Elucidation of the relationship between the mechanism of glycolytic dynamics in cancer cells and their pathophysiological characteristics remains a challenge in future.

The Wien Bridge Oscillator Family

DEFF Research Database (Denmark)

Lindberg, Erik

2006-01-01

A tutorial in which the Wien bridge family of oscillators is defined and investigated. Oscillators which do not fit into the Barkhausen criterion topology may be designed. A design procedure based on initial complex pole quality factor is reported. The dynamic transfer characteristic of the ampli......A tutorial in which the Wien bridge family of oscillators is defined and investigated. Oscillators which do not fit into the Barkhausen criterion topology may be designed. A design procedure based on initial complex pole quality factor is reported. The dynamic transfer characteristic...

Heat exchanger with oscillating flow

Science.gov (United States)

Scotti, Stephen J. (Inventor); Blosser, Max L. (Inventor); Camarda, Charles J. (Inventor)

1993-01-01

Various heat exchange apparatuses are described in which an oscillating flow of primary coolant is used to dissipate an incident heat flux. The oscillating flow may be imparted by a reciprocating piston, a double action twin reciprocating piston, fluidic oscillators or electromagnetic pumps. The oscillating fluid flows through at least one conduit in either an open loop or a closed loop. A secondary flow of coolant may be used to flow over the outer walls of at least one conduit to remove heat transferred from the primary coolant to the walls of the conduit.

Polymerization and oscillation stuttering in a filamentous model of the subcellular Min oscillation

Science.gov (United States)

Rutenberg, Andrew; Sengupta, Supratim; Sain, Anirban; Derr, Julien

2011-03-01

We present a computational model of the E. coli Min oscillation that involves polymerization of MinD filaments followed by depolymerization stimulated by filament-end zones of MinE. Our stochastic model is fully three-dimensional, and tracks the diffusion and interactions of every MinD and MinE molecule. We recover self-organized Min oscillations. We investigate the experimental phenomenon of oscillation stuttering, which we relate to the disruption of MinE tip-binding at the filament scale.

Oscillations in stellar atmospheres

International Nuclear Information System (INIS)

Costa, A.; Ringuelet, A.E.; Fontenla, J.M.

1989-01-01

Atmospheric excitation and propagation of oscillations are analyzed for typical pulsating stars. The linear, plane-parallel approach for the pulsating atmosphere gives a local description of the phenomenon. From the local analysis of oscillations, the minimum frequencies are obtained for radially propagating waves. The comparison of the minimum frequencies obtained for a variety of stellar types is in good agreement with the observed periods of the oscillations. The role of the atmosphere in the globar stellar pulsations is thus emphasized. 7 refs

Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

International Nuclear Information System (INIS)

Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

2004-01-01

The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

Possible pitfalls in search of magnetic order in thin films deposited on single crystalline sapphire substrates

International Nuclear Information System (INIS)

Salzer, R.; Spemann, D.; Esquinazi, P.; Hoehne, R.; Setzer, A.; Schindler, K.; Schmidt, H.; Butz, T.

2007-01-01

We have studied the field and temperature dependence of the magnetic moment of single crystalline sapphire substrates with different surface orientations. All the substrates show a ferromagnetic behavior that partially changes after surface cleaning. The amount of magnetic impurities in the substrates was determined by particle induced X-ray emission. The overall analysis of the data indicates that the magnetic impurities very likely contribute to the measured ferromagnetic behavior but does not rule out completely intrinsic contributions. Our work stresses the necessity to use other than bulk characterization methods for the study of weak ferromagnetic signals of thin films grown on oxide substrates

Neuromorphic computing with nanoscale spintronic oscillators.

Science.gov (United States)

Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

2017-07-26

Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

Rabi oscillation between states of a coupled harmonic oscillator

International Nuclear Information System (INIS)

Park, Tae Jun

2003-01-01

Rabi oscillation between bound states of a single potential is well known. However the corresponding formula between the states of two different potentials has not been obtained yet. In this work, we derive Rabi formula between the states of a coupled harmonic oscillator which may be used as a simple model for the electron transfer. The expression is similar to typical Rabi formula for a single potential. This result may be used to describe transitions between coupled diabatic potential curves

Transition from amplitude to oscillation death in a network of oscillators

International Nuclear Information System (INIS)

Nandan, Mauparna; Hens, C. R.; Dana, Syamal K.; Pal, Pinaki

2014-01-01

We report a transition from a homogeneous steady state (HSS) to inhomogeneous steady states (IHSSs) in a network of globally coupled identical oscillators. We perturb a synchronized population of oscillators in the network with a few local negative or repulsive mean field links. The whole population splits into two clusters for a certain number of repulsive mean field links and a range of coupling strength. For further increase of the strength of interaction, these clusters collapse into a HSS followed by a transition to IHSSs where all the oscillators populate either of the two stable steady states. We analytically determine the origin of HSS and its transition to IHSS in relation to the number of repulsive mean-field links and the strength of interaction using a reductionism approach to the model network. We verify the results with numerical examples of the paradigmatic Landau-Stuart limit cycle system and the chaotic Rössler oscillator as dynamical nodes. During the transition from HSS to IHSSs, the network follows the Turing type symmetry breaking pitchfork or transcritical bifurcation depending upon the system dynamics

Transition from amplitude to oscillation death in a network of oscillators

Energy Technology Data Exchange (ETDEWEB)

Nandan, Mauparna [Dr. B. C. Roy Engineering College, Durgapur 713206 (India); Department of Mathematics, National Institute of Technology, Durgapur 713209 (India); Hens, C. R.; Dana, Syamal K. [CSIR-Indian Institute of Chemical Biology, Jadavpur, Kolkata 700032 (India); Pal, Pinaki [Department of Mathematics, National Institute of Technology, Durgapur 713209 (India)

2014-12-01

We report a transition from a homogeneous steady state (HSS) to inhomogeneous steady states (IHSSs) in a network of globally coupled identical oscillators. We perturb a synchronized population of oscillators in the network with a few local negative or repulsive mean field links. The whole population splits into two clusters for a certain number of repulsive mean field links and a range of coupling strength. For further increase of the strength of interaction, these clusters collapse into a HSS followed by a transition to IHSSs where all the oscillators populate either of the two stable steady states. We analytically determine the origin of HSS and its transition to IHSS in relation to the number of repulsive mean-field links and the strength of interaction using a reductionism approach to the model network. We verify the results with numerical examples of the paradigmatic Landau-Stuart limit cycle system and the chaotic Rössler oscillator as dynamical nodes. During the transition from HSS to IHSSs, the network follows the Turing type symmetry breaking pitchfork or transcritical bifurcation depending upon the system dynamics.

Oscillating universe with quintom matter

International Nuclear Information System (INIS)

Xiong Huahui; Cai Yifu; Qiu Taotao; Piao Yunsong; Zhang Xinmin

2008-01-01

In this Letter, we study the possibility of building a model of the oscillating universe with quintom matter in the framework of 4-dimensional Friedmann-Robertson-Walker background. Taking the two-scalar-field quintom model as an example, we find in the model parameter space there are five different types of solutions which correspond to: (I) a cyclic universe with the minimal and maximal values of the scale factor remaining the same in every cycle, (II) an oscillating universe with its minimal and maximal values of the scale factor increasing cycle by cycle, (III) an oscillating universe with its scale factor always increasing, (IV) an oscillating universe with its minimal and maximal values of the scale factor decreasing cycle by cycle, and (V) an oscillating universe with its scale factor always decreasing

Improved memristor-based relaxation oscillator

KAUST Repository

Mosad, Ahmed G.

2013-09-01

This paper presents an improved memristor-based relaxation oscillator which offers higher frequency and wider tunning range than the existing reactance-less oscillators. It also has the capability of operating on two positive supplies or alternatively a positive and negative supply. Furthermore, it has the advantage that it can be fully integrated on-chip providing an area-efficient solution. On the other hand, The oscillation concept is discussed then a complete mathematical analysis of the proposed oscillator is introduced. Furthermore, the power consumption of the new relaxation circuit is discussed and validated by the PSPICE circuit simulations showing an excellent agreement. MATLAB results are also introduced to demonstrate the resistance range and the corresponding frequency range which can be obtained from the proposed relaxation oscillator. © 2013 Elsevier Ltd.

Broadband multiplex coherent anti-Stokes Raman scattering microscopy employing photonic-crystal fibers

DEFF Research Database (Denmark)

Andresen, Esben Ravn; Paulsen, Henrik Nørgaard; Birkedal, Victoria

2006-01-01

We demonstrate spectral multiplex coherent anti-Stokes Raman scattering (CARS) spectroscopy and microscopy based on a single Ti:sapphire oscillator and a nonlinear photonic-crystal fiber (PCF). The Stokes pulse is generated by spectral conversion of the laser pulse in a PCF. The pump pulse is eit...

The supersymmetric Pegg-Barnett oscillator

International Nuclear Information System (INIS)

Shen, Jian Qi

2005-01-01

The su(n) Lie algebraic structure of the Pegg-Barnett oscillator that possesses a finite-dimensional number-state space is demonstrated. The supersymmetric generalization of the Pegg-Barnett oscillator is suggested. it is shown that such a supersymmetric Pegg-Barnett oscillator may have some potential applications, e.g., the mass spectrum of the charged leptons

LSND neutrino oscillation results

International Nuclear Information System (INIS)

Louis, W.C.

1996-01-01

In the past several years, a number of experiments have searched for neutrino oscillations, where a neutrino of one type (say bar ν μ ) spontaneously transforms into a neutrino of another type (say bar ν e ). For this phenomenon to occur, neutrinos must be massive and the apparent conservation law of lepton families must be violated. In 1995 the LSND experiment published data showing candidate events that are consistent with bar ν μ oscillations. Additional data are reported here which provide stronger evidence for neutrino oscillations

Some comparison of two fractional oscillators

International Nuclear Information System (INIS)

Kang Yonggang; Zhang Xiu'e

2010-01-01

The other form of fractional oscillator equation comparing to the widely discussed one is ushered in. The properties of vibration of two fractional oscillators are discussed under the influence of different initial conditions. The interpretation of the characteristics of the fractional oscillators using different method is illustrated. Based on two fractional oscillator equations, two linked bodies and the continuous system are studied.

Structural disorder in sapphire induced by 90.3 MeV xenon ions

International Nuclear Information System (INIS)

Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

2010-01-01

In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

Do muons oscillate?

International Nuclear Information System (INIS)

Dolgov, A.D.; Morozov, A.Yu.; Okun, L.B.; Schepkin, M.G.

1997-01-01

We develop a theory of the EPR-like effects due to neutrino oscillations in the π→μν decays. Its experimental implications are space-time correlations of the neutrino and muon when they are both detected, while the pion decay point is not fixed. However, the more radical possibility of μ-oscillations in experiments where only muons are detected (as suggested in hep-ph/9509261), is ruled out. We start by discussing decays of monochromatic pions, and point out a few ''paradoxes''. Then we consider pion wave packets, solve the ''paradoxes'', and show that the formulas for μν correlations can be transformed into the usual expressions, describing neutrino oscillations, as soon as the pion decay point is fixed. (orig.)

Parametric oscillators from factorizations employing a constant-shifted Riccati solution of the classical harmonic oscillator

Energy Technology Data Exchange (ETDEWEB)

Rosu, H.C., E-mail: hcr@ipicyt.edu.mx [IPICyT, Instituto Potosino de Investigacion Cientifica y Tecnologica, Apdo Postal 3-74 Tangamanga, 78231 San Luis Potosi, S.L.P. (Mexico); Khmelnytskaya, K.V. [Universidad Autonoma de Queretaro, Centro Universitario, Cerro de las Campanas s/n, C.P. 76010 Santiago de Queretaro, Qro. (Mexico)

2011-09-19

We determine the kind of parametric oscillators that are generated in the usual factorization procedure of second-order linear differential equations when one introduces a constant shift of the Riccati solution of the classical harmonic oscillator. The mathematical results show that some of these oscillators could be of physical nature. We give the solutions of the obtained second-order differential equations and the values of the shift parameter providing strictly periodic and antiperiodic solutions. We also notice that this simple problem presents parity-time (PT) symmetry. Possible applications are mentioned. -- Highlights: → A particular Riccati solution of the classical harmonic oscillator is shifted by a constant. → Such a solution is used in the factorization brackets to get different equations of motion. → The properties of the parametric oscillators obtained in this way are examined.

Nonlinear oscillations

CERN Document Server

Nayfeh, Ali Hasan

1995-01-01

Nonlinear Oscillations is a self-contained and thorough treatment of the vigorous research that has occurred in nonlinear mechanics since 1970. The book begins with fundamental concepts and techniques of analysis and progresses through recent developments and provides an overview that abstracts and introduces main nonlinear phenomena. It treats systems having a single degree of freedom, introducing basic concepts and analytical methods, and extends concepts and methods to systems having degrees of freedom. Most of this material cannot be found in any other text. Nonlinear Oscillations uses sim

Memristor-based relaxation oscillators using digital gates

KAUST Repository

Khatib, Moustafa A.

2012-11-01

This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the \\'resistance storage\\' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.

Pattern formation in arrays of chemical oscillators

Indian Academy of Sciences (India)

Chemical oscillators; phase flip; oscillation death. PACS No. 05.45 .... array oscillate (with varying amplitudes and frequencies), while the others experience oscillation death .... Barring the boundary cells, one observes near phase flip and near ...

Low-frequency oscillations in Hall thrusters

International Nuclear Information System (INIS)

Wei Li-Qiu; Han Liang; Yu Da-Ren; Guo Ning

2015-01-01

In this paper, we summarize the research development of low-frequency oscillations in the last few decades. The findings of physical mechanism, characteristics and stabilizing methods of low-frequency oscillations are discussed. It shows that it is unreasonable and incomplete to model an ionization region separately to analyze the physical mechanism of low-frequency oscillations. Electro-dynamics as well as the formation conditions of ionization distribution play an important role in characteristics and stabilizing of low-frequency oscillations. Understanding the physical mechanism and characteristics of low- frequency oscillations thoroughly and developing a feasible method stabilizing this instability are still important research subjects. (review)

In vitro Evaluation of Effect of Dental Bleaching on the Shear Bond Strength of Sapphire Orthodontics Brackets Bonded with Resin Modified Glass Ionomer Cement

Directory of Open Access Journals (Sweden)

Zainab M Kadhom

2017-11-01

Full Text Available Aim: This study aimed to assess the effect of various types of bleaching agents on the shear bond strength of sapphire brackets bonded to human maxillary premolar teeth using resin modified glass ionomer cement (RMGIC and to determine the site of bond failure. Materials and Methods: Thirty freshly extracted maxillary human premolars were selected and assigned into three equal groups, ten teeth in each. The first group was the control (unbleached group; the second group comprised teeth bleached with hydrogen peroxide group (HP 37.5% (in-office bleaching while the third group included teeth bleached with carbamide peroxide group (CP 16% (at-home bleaching. The teeth in the experimental groups were bleached and stored in water one day then bonded with sapphire brackets using RMGIC with the control group and left another day. De-bonding was performed using Instron universal testing machine. To determine the site of bond failure, both the enamel surface and bracket base of each tooth were examined under magnifying lens (20X of a stereomicroscope. Results: Results showed statistically highly significant difference in the shear bond strengths between control group and both of bleaching groups being low in the control group. Score III was the predominant site of bond failure in all groups. Conclusions: RMGIC provides adequate bond strength when bonding the sapphire brackets to bleached enamel; this bonding was strong enough to resist both the mechanical and masticatory forces. Most of the adhesive remained on the brackets, so it reduced the time required for removal of the bonding material’s remnants during enamel finishing and polishing.

Coupled oscillators with parity-time symmetry

Energy Technology Data Exchange (ETDEWEB)

Tsoy, Eduard N., E-mail: etsoy@uzsci.net

2017-02-05

Different models of coupled oscillators with parity-time (PT) symmetry are studied. Hamiltonian functions for two and three linear oscillators coupled via coordinates and accelerations are derived. Regions of stable dynamics for two coupled oscillators are obtained. It is found that in some cases, an increase of the gain-loss parameter can stabilize the system. A family of Hamiltonians for two coupled nonlinear oscillators with PT-symmetry is obtained. An extension to high-dimensional PT-symmetric systems is discussed. - Highlights: • A generalization of a Hamiltonian system of linear coupled oscillators with the parity-time (PT) symmetry is suggested. • It is found that an increase of the gain-loss parameter can stabilize the system. • A family of Hamiltonian functions for two coupled nonlinear oscillators with PT-symmetry is obtained.

Slow oscillations orchestrating fast oscillations and memory consolidation.

Science.gov (United States)

Mölle, Matthias; Born, Jan

2011-01-01

Slow-wave sleep (SWS) facilitates the consolidation of hippocampus-dependent declarative memory. Based on the standard two-stage memory model, we propose that memory consolidation during SWS represents a process of system consolidation which is orchestrated by the neocortical memory. The slow oscillations temporally group neuronal activity into up-states of strongly enhanced neuronal activity and down-states of neuronal silence. In a feed-forward efferent action, this grouping is induced not only in the neocortex but also in other structures relevant to consolidation, namely the thalamus generating 10-15Hz spindles, and the hippocampus generating sharp wave-ripples, with the latter well known to accompany a replay of newly encoded memories taking place in hippocampal circuitries. The feed-forward synchronizing effect of the slow oscillation enables the formation of spindle-ripple events where ripples and accompanying reactivated hippocampal memory information become nested into the single troughs of spindles. Spindle-ripple events thus enable reactivated memory-related hippocampal information to be fed back to neocortical networks in the excitable slow oscillation up-state where they can induce enduring plastic synaptic changes underlying the effective formation of long-term memories. Copyright © 2011 Elsevier B.V. All rights reserved.

Advances in Trace Element “Fingerprinting” of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

Directory of Open Access Journals (Sweden)

F. Lin Sutherland

2014-12-01

Full Text Available Mogok gem corundum samples from twelve localities were analyzed for trace element signatures (LA-ICP-MS method and oxygen isotope values (δ18O, by laser fluorination. The study augmented earlier findings on Mogok gem suites that suggested the Mogok tract forms a high vanadium gem corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents. Oxygen isotope values (δ18O for the ruby and high Si-Ca-Ga corundum (20‰–25‰ and for sapphire (10‰–20‰ indicate typical crustal values, with values >20‰ being typical of carbonate genesis. The high Si-Ca-Ga ruby has high chromium (up to 3.2 wt % Cr and gallium (up to 0. 08 wt % Ga compared to most Mogok ruby (<2 wt % Cr; <0.02 wt % Ga. In trace element ratio plots the Si-Ca-Ga-rich corundum falls into separate fields from the typical Mogok metamorphic fields. The high Ga/Mg ratios (46–521 lie well within the magmatic range (>6, and with other features suggest a potential skarn-like, carbonate-related genesis with a high degree of magmatic fluid input The overall trace element results widen the range of different signatures identified within Mogok gem corundum suites and indicate complex genesis. The expanded geochemical platform, related to a variety of metamorphic, metasomatic and magmatic sources, now provides a wider base for geographic typing of Mogok gem corundum suites. It allows more detailed comparisons with suites from other deposits and will assist identification of Mogok gem corundum sources used in jewelry.

Sapphire Energy - Integrated Algal Biorefinery

Energy Technology Data Exchange (ETDEWEB)

White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

2015-07-22

Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

International Nuclear Information System (INIS)

Pérez-Tomás, A.; Fontserè, A.; Llobet, J.; Placidi, M.; Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y.; Baron, N.

2013-01-01

The vertical bulk (drain-bulk) current (I db ) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I db (25–300 °C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E a ), the (soft or destructive) vertical breakdown voltage (V B ), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E a = 0.35 eV at T = 25–300 °C; V B = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E a = 2.5 eV at T > 265 °C; V B > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E a = 0.35 eV at T > 150 °C; V B = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

International Nuclear Information System (INIS)

Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

2015-01-01

Highlights: • Concave nano-patterned sapphire substrates with SiO 2 blocking layer. • The IQE is almost two times larger than that of conventional one. • The EQE was extremely enhanced more than 100%. - Abstract: In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO 2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO 2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO 2 blocking layer proposed in this work can enhance the performance of LEDs.

A theory of generalized Bloch oscillations

DEFF Research Database (Denmark)

Duggen, Lars; Lew Yan Voon, L. C.; Lassen, Benny

2016-01-01

Bloch oscillations of electrons are shown to occur for cases when the energy spectrum does not consist of the traditional evenly-spaced ladders and the potential gradient does not result from an external electric field. A theory of such generalized Bloch oscillations is presented and an exact...... oscillations. We stipulate that the presented theory of generalized Bloch oscillations can be extended to other systems such as acoustics and photonics....

TOWARDS THRESHOLD FREQUENCY IN CHAOTIC COLPITTS OSCILLATOR

DEFF Research Database (Denmark)

Lindberg, Erik; Tamasevicius, Arunas; Mykolaitis, Gytis

2007-01-01

A novel version of chaotic Colpitts oscillator is described. Instead of a linear loss resistor, it includes an extra inductor and diode in the collector circuit of the transistor. The modified circuit in comparison with the common Colpitts oscillator may generate chaotic oscillations at the funda......A novel version of chaotic Colpitts oscillator is described. Instead of a linear loss resistor, it includes an extra inductor and diode in the collector circuit of the transistor. The modified circuit in comparison with the common Colpitts oscillator may generate chaotic oscillations...

pH-regulated chemical oscillators.

Science.gov (United States)

Orbán, Miklós; Kurin-Csörgei, Krisztina; Epstein, Irving R

2015-03-17

The hydrogen ion is arguably the most ubiquitous and important species in chemistry. It also plays a key role in nearly every biological process. In this Account, we discuss systems whose behavior is governed by oscillations in the concentration of hydrogen ion. The first chemical oscillators driven by changes in pH were developed a quarter century ago. Since then, about two dozen new pH oscillators, systems in which the periodic variation in pH is not just an indicator but an essential prerequisite of the oscillatory behavior, have been discovered. Mechanistic understanding of their behavior has grown, and new ideas for their practical application have been proposed and, in some cases, tested. Here we present a catalog of the known pH oscillators, divide them into mechanistically based categories based on whether they involve a single oxidant and reductant or an oxidant and a pair of reductants, and describe general mechanisms for these two major classes of systems. We also describe in detail the chemistry of one example from each class, hydrogen peroxide-sulfide and ferricyanide-iodate-sulfite. Finally, we consider actual and potential applications. These include using pH oscillators to induce oscillation in species that would otherwise be nonoscillatory, creating novel spatial patterns, generating periodic transitions between vesicle and micelle states, stimulating switching between folded and random coil states of DNA, building molecular motors, and designing pulsating drug delivery systems. We point out the importance for future applications of finding a batch pH oscillator, one that oscillates in a closed system for an extended period of time, and comment on the progress that has been made toward that goal.

On the Dirac oscillator

International Nuclear Information System (INIS)

Rodrigues, R. de Lima

2007-01-01

In the present work we obtain a new representation for the Dirac oscillator based on the Clifford algebra C 7. The symmetry breaking and the energy eigenvalues for our model of the Dirac oscillator are studied in the non-relativistic limit. (author)

Exact folded-band chaotic oscillator.

Science.gov (United States)

Corron, Ned J; Blakely, Jonathan N

2012-06-01

An exactly solvable chaotic oscillator with folded-band dynamics is shown. The oscillator is a hybrid dynamical system containing a linear ordinary differential equation and a nonlinear switching condition. Bounded oscillations are provably chaotic, and successive waveform maxima yield a one-dimensional piecewise-linear return map with segments of both positive and negative slopes. Continuous-time dynamics exhibit a folded-band topology similar to Rössler's oscillator. An exact solution is written as a linear convolution of a fixed basis pulse and a discrete binary sequence, from which an equivalent symbolic dynamics is obtained. The folded-band topology is shown to be dependent on the symbol grammar.

Unstable oscillators based hyperchaotic circuit

DEFF Research Database (Denmark)

Murali, K.; Tamasevicius, A.; G. Mykolaitis, A.

1999-01-01

A simple 4th order hyperchaotic circuit with unstable oscillators is described. The circuit contains two negative impedance converters, two inductors, two capacitors, a linear resistor and a diode. The Lyapunov exponents are presented to confirm hyperchaotic nature of the oscillations in the circ...... in the circuit. The performance of the circuit is investigated by means of numerical integration of appropriate differential equations, PSPICE simulations, and hardware experiment.......A simple 4th order hyperchaotic circuit with unstable oscillators is described. The circuit contains two negative impedance converters, two inductors, two capacitors, a linear resistor and a diode. The Lyapunov exponents are presented to confirm hyperchaotic nature of the oscillations...

A Survey on Forced Oscillations in Power System

OpenAIRE

Ghorbaniparvar, Mohammadreza

2016-01-01

Oscillations in a power system can be categorized into free oscillations and forced oscillations. Many algorithms have been developed to estimate the modes of free oscillations in a power system. Recently, forced oscillations caught many attentions. Techniques are proposed to detect forced oscillations and locate their sources. In addition, forced oscillations may have negative impact on the estimation of mode and mode-shape if they are not properly accounted for. To improve the power system ...

Neutrino oscillations. Theory and experiment

International Nuclear Information System (INIS)

Beshtoev, Kh.M.

2001-01-01

Theoretical schemes on neutrino oscillations are considered. The experimental data on neutrino oscillations obtained in the Super-Kamiokande (Japan) and SNO (Canada) experiments are given. Comparison of these data with the predictions obtained in the theoretical schemes is done. Conclusion is made that the experimental data confirm only the scheme with transitions (oscillations) between aromatic ν e -, ν μ -, ν τ - neutrinos with maximal angle mixings. (author)

Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

Energy Technology Data Exchange (ETDEWEB)

Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

2010-07-01

Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

Reactor oscillator - I - III, Part III - Electronic device; Reaktorski oscilator - I-III, III Deo - Elektronski uredjaj

Energy Technology Data Exchange (ETDEWEB)

Lolic, B; Jovanovic, S [Institute of Nuclear Sciences Boris Kidric, Laboratorija za fiziku reaktora, Vinca, Beograd (Serbia and Montenegro)

1961-12-15

This report describes functioning of the reactor oscillator electronic system. Two methods of oscillator operation were discussed. The first method is so called method of amplitude modulation of the reactor power, and the second newer method is phase method. Both methods are planned for the present reactor oscillator.

Pile oscillator ROB-1, cooperation NPY

Energy Technology Data Exchange (ETDEWEB)

Petrovic, M; Markovic, V; Obradovic, D; Kocic, A; Velickovic, LJ; Jovanovic, S [Boris Kidric Institute of nuclear sciences Vinca, Belgrade (Yugoslavia)

1965-11-15

The present paper explains the purpose of the work on reactor kinetics and separately deals with the region for which the ROB-1 reactor oscillator is constructed. The theoretical part concerns the basic principles on which the oscillator operates. the paper also discusses the details of the oscillator, the procedure for preparation and measurement, and analyzes the source of errors. In addition several examples of the use of oscillator are given. (author)

Pile oscillator ROB-1, cooperation NPY

International Nuclear Information System (INIS)

Petrovic, M.; Markovic, V.; Obradovic, D.; Kocic, A.; Velickovic, LJ.; Jovanovic, S.

1965-11-01

The present paper explains the purpose of the work on reactor kinetics and separately deals with the region for which the ROB-1 reactor oscillator is constructed. The theoretical part concerns the basic principles on which the oscillator operates. the paper also discusses the details of the oscillator, the procedure for preparation and measurement, and analyzes the source of errors. In addition several examples of the use of oscillator are given. (author)

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

International Nuclear Information System (INIS)

Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

2006-01-01

High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

International Nuclear Information System (INIS)

Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

2012-01-01

The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Nonlocal synchronization in nearest neighbour coupled oscillators

International Nuclear Information System (INIS)

El-Nashar, H.F.; Elgazzar, A.S.; Cerdeira, H.A.

2002-02-01

We investigate a system of nearest neighbour coupled oscillators. We show that the nonlocal frequency synchronization, that might appear in such a system, occurs as a consequence of the nearest neighbour coupling. The power spectra of nonadjacent oscillators shows that there is no complete coincidence between all frequency peaks of the oscillators in the nonlocal cluster, while the peaks for neighbouring oscillators approximately coincide even if they are not yet in a cluster. It is shown that nonadjacent oscillators closer in frequencies, share slow modes with their adjacent oscillators which are neighbours in space. It is also shown that when a direct coupling between non-neighbours oscillators is introduced explicitly, the peaks of the spectra of the frequencies of those non-neighbours coincide. (author)

Observation of Quasichanneling Oscillations

International Nuclear Information System (INIS)

Wistisen, T. N.; Mikkelsen, R. E.; Uggerhoj, University I.; Wienands, University; Markiewicz, T. W.

2017-01-01

Here, we report on the first experimental observations of quasichanneling oscillations, recently seen in simulations and described theoretically. Although above-barrier particles penetrating a single crystal are generally seen as behaving almost as in an amorphous substance, distinct oscillation peaks nevertheless appear for particles in that category. The quasichanneling oscillations were observed at SLAC National Accelerator Laboratory by aiming 20.35 GeV positrons and electrons at a thin silicon crystal bent to a radius of R = 0.15 m, exploiting the quasimosaic effect. For electrons, two relatively faint quasichanneling peaks were observed, while for positrons, seven quasichanneling peaks were clearly identified.

Mutual phase-locking of planar nano-oscillators

Directory of Open Access Journals (Sweden)

K. Y. Xu

2014-06-01

Full Text Available Characteristics of phase-locking between Gunn effect-based planar nano-oscillators are studied using an ensemble Monte Carlo (EMC method. Directly connecting two oscillators in close proximity, e.g. with a channel distance of 200 nm, only results in incoherent oscillations. In order to achieve in-phase oscillations, additional considerations must be taken into account. Two coupling paths are shown to exist between oscillators. One coupling path results in synchronization and the other results in anti-phase locking. The coupling strength through these two paths can be adjusted by changing the connections between oscillators. When two identical oscillators are in the anti-phase locking regime, fundamental components of oscillations are cancelled. The resulting output consists of purely second harmonic oscillations with a frequency of about 0.66 THz. This type of second harmonic generation is desired for higher frequency applications since no additional filter system is required. This transient phase-locking process is further analyzed using Adler's theory. The locking range is extracted, and a criterion for the channel length difference required for realizing phased arrays is obtained. This work should aid in designing nano-oscillator arrays for high power applications and developing directional transmitters for wireless communications.

Neutrino oscillations at proton accelerators

International Nuclear Information System (INIS)

Michael, Douglas

2002-01-01

Data from many different experiments have started to build a first glimpse of the phenomenology associated with neutrino oscillations. Results on atmospheric and solar neutrinos are particularly clear while a third result from LSND suggests a possibly very complex oscillation phenomenology. As impressive as the results from current experiments are, it is clear that we are just getting started on a long-term experimental program to understand neutrino masses, mixings and the physics which produce them. A number of exciting fundamental physics possibilities exist, including that neutrino oscillations could demonstrate CP or CPT violation and could be tied to exotic high-energy phenomena including strings and extra dimensions. A complete exploration of oscillation phenomena demands many experiments, including those possible using neutrino beams produced at high energy proton accelerators. Most existing neutrino experiments are statistics limited even though they use gigantic detectors. High intensity proton beams are essential for producing the intense neutrino beams which we need for next generation neutrino oscillation experiments

Neutrino Oscillations at Proton Accelerators

Science.gov (United States)

Michael, Douglas

2002-12-01

Data from many different experiments have started to build a first glimpse of the phenomenology associated with neutrino oscillations. Results on atmospheric and solar neutrinos are particularly clear while a third result from LSND suggests a possibly very complex oscillation phenomenology. As impressive as the results from current experiments are, it is clear that we are just getting started on a long-term experimental program to understand neutrino masses, mixings and the physics which produce them. A number of exciting fundamental physics possibilities exist, including that neutrino oscillations could demonstrate CP or CPT violation and could be tied to exotic high-energy phenomena including strings and extra dimensions. A complete exploration of oscillation phenomena demands many experiments, including those possible using neutrino beams produced at high energy proton accelerators. Most existing neutrino experiments are statistics limited even though they use gigantic detectors. High intensity proton beams are essential for producing the intense neutrino beams which we need for next generation neutrino oscillation experiments.

Parasitic lasing suppression in large-aperture Ti:sapphire amplifiers by optimizing the seed–pump time delay

International Nuclear Information System (INIS)

Chu, Y X; Liang, X Y; Yu, L H; Xu, L; Lu, X M; Liu, Y Q; Leng, Y X; Li, R X; Xu, Z Z

2013-01-01

Theoretical and experimental investigations are carried out to determine the influence of the time delay between the input seed pulse and pump pulses on transverse parasitic lasing in a Ti:sapphire amplifier with a diameter of 80 mm, which is clad by a refractive index-matched liquid doped with an absorber. When the time delay is optimized, a maximum output energy of 50.8 J is achieved at a pump energy of 105 J, which corresponds to a conversion efficiency of 47.5%. Based on the existing compressor, the laser system achieves a peak power of 1.26 PW with a 29.0 fs pulse duration. (letter)

Nonlinear analysis of ring oscillator circuits

KAUST Repository

Ge, Xiaoqing

2010-06-01

Using nonlinear systems techniques, we analyze the stability properties and synchronization conditions for ring oscillator circuits, which are essential building blocks in digital systems. By making use of its cyclic structure, we investigate local and global stability properties of an n-stage ring oscillator. We present a sufficient condition for global asymptotic stability of the origin and obtain necessity if the ring oscillator consists of identical inverter elements. We then give a synchronization condition for identical interconnected ring oscillators.

Nonlinear analysis of ring oscillator circuits

KAUST Repository

Ge, Xiaoqing; Arcak, Murat; Salama, Khaled N.

2010-01-01

Using nonlinear systems techniques, we analyze the stability properties and synchronization conditions for ring oscillator circuits, which are essential building blocks in digital systems. By making use of its cyclic structure, we investigate local and global stability properties of an n-stage ring oscillator. We present a sufficient condition for global asymptotic stability of the origin and obtain necessity if the ring oscillator consists of identical inverter elements. We then give a synchronization condition for identical interconnected ring oscillators.

Phase-locked Josephson soliton oscillators

DEFF Research Database (Denmark)

Holst, T.; Hansen, Jørn Bindslev; Grønbech-Jensen, N.

1991-01-01

Detailed experimental characterization of the phase-locking at both DC and at microwave frequencies is presented for two closely spaced Josephson soliton (fluxon) oscillators. In the phase-locked state, the radiated microwave power exhibited an effective gain. With one common bias source......, a frequency tunability of the phase-locked oscillators up to 7% at 10 GHz was observed. The interacting soliton oscillators were modeled by two inductively coupled nonlinear transmission lines...

Stable And Oscillating Acoustic Levitation

Science.gov (United States)

Barmatz, Martin B.; Garrett, Steven L.

1988-01-01

Sample stability or instability determined by levitating frequency. Degree of oscillation of acoustically levitated object along axis of levitation chamber controlled by varying frequency of acoustic driver for axis above or below frequency of corresponding chamber resonance. Stabilization/oscillation technique applied in normal Earth gravity, or in absence of gravity to bring object quickly to rest at nominal levitation position or make object oscillate in desired range about that position.

Umbral oscillations as a probe of sunspot

International Nuclear Information System (INIS)

Abdelatif, T.E.H.

1985-01-01

The interaction of the solar five-minute oscillations with a sunspot is thoroughly explored, both on observational and theoretical grounds. Simple theoretical models are developed in order to understand the observations of umbral oscillations. Observations made at the National Solar Observatory detected both the three-minute and five-minute umbral oscillations at photospheric heights. The three-minute oscillations were found to have a kinetic energy density six times higher in the photosphere than in the chromosphere and to be concentrated in the central part of the umbra, supporting the photospheric resonance theory for the three-minute umbral oscillations. The five-minute oscillations are attenuated in the umbra, which appears to act as a filter in selecting some of the peaks in the power spectrum of five-minute oscillations in the surrounding photosphere. The k-omega power spectrum of the umbral oscillations shows a shift of power to longer wavelengths. Theoretical models of the transmission of acoustic waves into a magnetic region explain both observed effects

Lepton asymmetry and neutrino oscillations interplay

Energy Technology Data Exchange (ETDEWEB)

Kirilova, Daniela, E-mail: dani@astro.bas.bg [Bulgarian Academy of Sciences, Institute of Astronomy and NAO (Bulgaria)

2013-03-15

We discuss the interplay between lepton asymmetry L and {nu} oscillations in the early Universe. Neutrino oscillations may suppress or enhance previously existing L. On the other hand L is capable to suppress or enhance neutrino oscillations. The mechanism of L enhancement in MSW resonant {nu} oscillations in the early Universe is numerically analyzed. L cosmological effects through {nu} oscillations are discussed. We discuss how L may change the cosmological BBN constraints on neutrino and show that BBN model with {nu}{sub e}{r_reversible}{nu}{sub s} oscillations is extremely sensitive to L - it allows to obtain the most stringent constraints on L value. We discuss also the cosmological role of active-sterile {nu} mixing and L in connection with the indications about additional relativistic density in the early Universe, pointed out by BBN, CMB and LSS data and the analysis of global {nu} data.

50-fs pulse generation directly from a colliding-pulse mode-locked Ti:sapphire laser using an antiresonant ring mirror

Science.gov (United States)

Naganuma, Kazunori; Mogi, Kazuo

1991-05-01

50-fs pulses were directly generated from a colliding-pulse mode-locked Ti:sapphire laser. To achieve the colliding-pulse mode locking, a miniature antiresonant ring containing an organic saturable dye jet was employed as the end mirror for the linear cavity laser. Based on measured dispersion of intracavity elements, a prism pair was implemented to control the cavity dispersion. The generated pulses have no linear chirp but do exhibit parabolic instantaneous frequency owing to third-order dispersion introduced by the prism pair.

Narrow linewidth operation of the RILIS titanium: Sapphire laser at ISOLDE/CERN

CERN Document Server

Rothe, S; Wendt, K D A; Fedosseev, V N; Kron, T; Marsh, B A

2013-01-01

A narrow linewidth operating mode for the Ti:sapphire laser of the CERN ISOLDE Resonance Ionization Laser Ion Source (RILIS) has been developed. This satisfies the laser requirements for the programme of in-source resonance ionization spectroscopy measurements and improves the selectivity for isomer separation using RILIS. A linewidth reduction from typically 10 GHz down to 1 GHz was achieved by the intra-cavity insertion of a second (thick) Fabry-Perot etalon. Reliable operation during a laser scan was achieved through motorized control of the tilt angle of each etalon. A scanning, stabilization and mode cleaning procedure was developed and implemented in LabVIEW. The narrow linewidth operation was confirmed in a high resolution spectroscopy study of francium isotopes by the Collinear Resonance Ionization Spectroscopy experiment. The resulting laser scans demonstrate the suitability of the laser, in terms of linewidth, spectral purity and stability for high resolution in-source spectroscopy and isomer select...

Rayleigh-type parametric chemical oscillation

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Shyamolina; Ray, Deb Shankar, E-mail: pcdsr@iacs.res.in [Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

2015-09-28

We consider a nonlinear chemical dynamical system of two phase space variables in a stable steady state. When the system is driven by a time-dependent sinusoidal forcing of a suitable scaling parameter at a frequency twice the output frequency and the strength of perturbation exceeds a threshold, the system undergoes sustained Rayleigh-type periodic oscillation, wellknown for parametric oscillation in pipe organs and distinct from the usual forced quasiperiodic oscillation of a damped nonlinear system where the system is oscillatory even in absence of any external forcing. Our theoretical analysis of the parametric chemical oscillation is corroborated by full numerical simulation of two well known models of chemical dynamics, chlorite-iodine-malonic acid and iodine-clock reactions.

Rayleigh-type parametric chemical oscillation.

Science.gov (United States)

Ghosh, Shyamolina; Ray, Deb Shankar

2015-09-28

We consider a nonlinear chemical dynamical system of two phase space variables in a stable steady state. When the system is driven by a time-dependent sinusoidal forcing of a suitable scaling parameter at a frequency twice the output frequency and the strength of perturbation exceeds a threshold, the system undergoes sustained Rayleigh-type periodic oscillation, wellknown for parametric oscillation in pipe organs and distinct from the usual forced quasiperiodic oscillation of a damped nonlinear system where the system is oscillatory even in absence of any external forcing. Our theoretical analysis of the parametric chemical oscillation is corroborated by full numerical simulation of two well known models of chemical dynamics, chlorite-iodine-malonic acid and iodine-clock reactions.

Nonlinearity induced synchronization enhancement in mechanical oscillators

Science.gov (United States)

Czaplewski, David A.; Lopez, Omar; Guest, Jeffrey R.; Antonio, Dario; Arroyo, Sebastian I.; Zanette, Damian H.

2018-05-08

An autonomous oscillator synchronizes to an external harmonic force only when the forcing frequency lies within a certain interval, known as the synchronization range, around the oscillator's natural frequency. Under ordinary conditions, the width of the synchronization range decreases when the oscillation amplitude grows, which constrains synchronized motion of micro- and nano-mechanical resonators to narrow frequency and amplitude bounds. The present invention shows that nonlinearity in the oscillator can be exploited to manifest a regime where the synchronization range increases with an increasing oscillation amplitude. The present invention shows that nonlinearities in specific configurations of oscillator systems, as described herein, are the key determinants of the effect. The present invention presents a new configuration and operation regime that enhances the synchronization of micro- and nano-mechanical oscillators by capitalizing on their intrinsic nonlinear dynamics.

Integrated optoelectronic oscillator.

Science.gov (United States)

Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

2018-04-30

With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

Chemical sensor with oscillating cantilevered probe

Science.gov (United States)

Adams, Jesse D

2013-02-05

The invention provides a method of detecting a chemical species with an oscillating cantilevered probe. A cantilevered beam is driven into oscillation with a drive mechanism coupled to the cantilevered beam. A free end of the oscillating cantilevered beam is tapped against a mechanical stop coupled to a base end of the cantilevered beam. An amplitude of the oscillating cantilevered beam is measured with a sense mechanism coupled to the cantilevered beam. A treated portion of the cantilevered beam is exposed to the chemical species, wherein the cantilevered beam bends when exposed to the chemical species. A second amplitude of the oscillating cantilevered beam is measured, and the chemical species is determined based on the measured amplitudes.

Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

International Nuclear Information System (INIS)

Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

2006-01-01

The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

Oscillations of the Outer Boundary of the Outer Radiation Belt During Sawtooth Oscillations

Directory of Open Access Journals (Sweden)

Jae-Hun Kim

2006-09-01

Full Text Available We report three sawtooth oscillation events observed at geosynchronous orbit where we find quasi-periodic (every 2-3 hours sudden flux increases followed by slow flux decreases at the energy levels of ˜50-400 keV. For these three sawtooth events, we have examined variations of the outer boundary of the outer radiation belt. In order to determine L values of the outer boundary, we have used data of relativistic electron flux observed by the SAMPEX satellite. We find that the outer boundary of the outer radiation belt oscillates periodically being consistent with sawtooth oscillation phases. Specifically, the outer boundary of the outer radiation belt expands (namely, the boundary L value increases following the sawtooth particle flux enhancement of each tooth, and then contracts (namely, the boundary L value decreases while the sawtooth flux decreases gradually until the next flux enhancement. On the other hand, it is repeatedly seen that the asymmetry of the magnetic field intensity between dayside and nightside decreases (increases due to the dipolarization (the stretching on the nightside as the sawtooth flux increases (decreases. This implies that the periodic magnetic field variations during the sawtooth oscillations are likely responsible for the expansion-contraction oscillations of the outer boundary of the outer radiation belt.

Sustaining GHz oscillation of carbon nanotube based oscillators via a MHz frequency excitation

International Nuclear Information System (INIS)

Motevalli, Benyamin; Taherifar, Neda; Liu, Jefferson Zhe

2016-01-01

There have been intensive studies to investigate the properties of gigahertz nano-oscillators based on multi-walled carbon nanotubes (MWCNTs). Many of these studies, however, revealed that the unique telescopic translational oscillations in such devices would damp quickly due to various energy dissipation mechanisms. This challenge remains the primary obstacle against its practical applications. Herein, we propose a design concept in which a GHz oscillation could be re-excited by a MHz mechanical motion. This design involves a triple-walled CNT, in which sliding of the longer inner tube at a MHz frequency can re-excite and sustain a GHz oscillation of the shorter middle tube. Our molecular dynamics (MD) simulations prove this design concept at ∼10 nm scale. A mathematical model is developed to explore the feasibility at a larger size scale. As an example, in an oscillatory system with the CNT’s length above 100 nm, the high oscillatory frequency range of 1.8–3.3 GHz could be excited by moving the inner tube at a much lower frequency of 53.4 MHz. This design concept together with the mechanical model could energize the development of GHz nano-oscillators in miniaturized electro-mechanical devices. (paper)

Comparison of Methods for Oscillation Detection

DEFF Research Database (Denmark)

Odgaard, Peter Fogh; Trangbæk, Klaus

2006-01-01

This paper compares a selection of methods for detecting oscillations in control loops. The methods are tested on measurement data from a coal-fired power plant, where some oscillations are occurring. Emphasis is put on being able to detect oscillations without having a system model and without...... using process knowledge. The tested methods show potential for detecting the oscillations, however, transient components in the signals cause false detections as well, motivating usage of models in order to remove the expected signals behavior....

Density-wave oscillations

International Nuclear Information System (INIS)

Belblidia, L.A.; Bratianu, C.

1979-01-01

Boiling flow in a steam generator, a water-cooled reactor, and other multiphase processes can be subject to instabilities. It appears that the most predominant instabilities are the so-called density-wave oscillations. They can cause difficulties for three main reasons; they may induce burnout; they may cause mechanical vibrations of components; and they create system control problems. A comprehensive review is presented of experimental and theoretical studies concerning density-wave oscillations. (author)

Isotropic oscillator: spheroidal wave functions

International Nuclear Information System (INIS)

Mardoyan, L.G.; Pogosyan, G.S.; Ter-Antonyan, V.M.; Sisakyan, A.N.

1985-01-01

Solutions of the Schroedinger equation are found for an isotropic oscillator (10) in prolate and oblate spheroidal coordinates. It is shown that the obtained solutions turn into spherical and cylindrical bases of the isotropic oscillator at R→0 and R→ infinity (R is the dimensional parameter entering into the definition of prolate and oblate spheroidal coordinates). The explicit form is given for both prolate and oblate basis of the isotropic oscillator for the lowest quantum states

Chaotic solar oscillations

Energy Technology Data Exchange (ETDEWEB)

Blacher, S; Perdang, J [Institut d' Astrophysique, B-4200 Cointe-Ougree (Belgium)

1981-09-01

A numerical experiment on Hamiltonian oscillations demonstrates the existence of chaotic motions which satisfy the property of phase coherence. It is observed that the low-frequency end of the power spectrum of such motions is remarkably similar in structure to the low-frequency SCLERA spectra. Since the smallness of the observed solar amplitudes is not a sufficient mathematical ground for inefficiency of non-linear effects the possibility of chaos among solar oscillations cannot be discarded a priori.

On the nonlinear modeling of ring oscillators

KAUST Repository

Elwakil, Ahmed S.

2009-06-01

We develop higher-order nonlinear models of three-stage and five-stage ring oscillators based on a novel inverter model. The oscillation condition and oscillation frequency are derived and compared to classical linear model analysis. Two important special cases for five-stage ring oscillators are also studied. Numerical simulations are shown. © 2009 World Scientific Publishing Company.

On the nonlinear modeling of ring oscillators

KAUST Repository

Elwakil, Ahmed S.; Salama, Khaled N.

2009-01-01

We develop higher-order nonlinear models of three-stage and five-stage ring oscillators based on a novel inverter model. The oscillation condition and oscillation frequency are derived and compared to classical linear model analysis. Two important special cases for five-stage ring oscillators are also studied. Numerical simulations are shown. © 2009 World Scientific Publishing Company.

Synchronization of hyperchaotic oscillators

DEFF Research Database (Denmark)

Tamasevicius, A.; Cenys, A.; Mykolaitis, G.

1997-01-01

Synchronization of chaotic oscillators is believed to have promising applications in secure communications. Hyperchaotic systems with multiple positive Lyapunov exponents (LEs) have an advantage over common chaotic systems with only one positive LE. Three different types of hyperchaotic electronic...... oscillators are investigated demonstrating synchronization by means of only one properly selected variable....

Flashing oscillation in pool water

International Nuclear Information System (INIS)

Takamasa, Tomoji; Kondo, Koichi; Hazuku, Tatsuya

1996-01-01

This paper presents an experimental study of high-pressure saturated water discharging into the pool water. The purpose of the experiment is to clarify the phenomena that occur in blow-down of high-pressure saturated water from the pressure vessel into the water-filled containment in the case of a wall-crack accident or a LOCA in an advanced reactor. The results revealed that a flashing oscillation (FO) occurs when high-pressure saturated water discharges into the pool water, under specified experimental settings. The range of the flashing oscillates between a point very close to and some distance from the vent hole. The pressures in the vent tube and pool water vary according to the flashing oscillation. The pressure oscillation and frequency of flashing position might be caused by the balancing action between the supply of saturated water, flashing at the control volume and its condensation on the steam-water interface. A linear analysis was conducted using a spherical flashing bubble model. The period of the flashing oscillation in the experiments can be explained by theoretical analysis

New Realizations of Single OTRA-Based Sinusoidal Oscillators

Directory of Open Access Journals (Sweden)

Hung-Chun Chien

2014-01-01

Full Text Available This study proposes three new sinusoidal oscillators based on an operational transresistance amplifier (OTRA. Each of the proposed oscillator circuits consists of one OTRA combined with a few passive components. The first circuit is an OTRA-based minimum RC oscillator. The second circuit is capable of providing independent control on the condition of oscillation without affecting the oscillation frequency. The third circuit exhibits independent control of oscillation frequency through a capacitor. This study first introduces the OTRA and the related formulations of the proposed oscillator circuits, and then discusses the nonideal effects, sensitivity analyses, and frequency stability of the presented circuits. The proposed oscillators exhibit low sensitivities and good frequency stability. Because the presented circuits feature low impedance output, they can be connected directly to the next stage without cascading additional voltage buffers. HSPICE simulations and experimental results confirm the feasibility of the new oscillator circuits.

Neutrino oscillations: present status and outlook

International Nuclear Information System (INIS)

Schwetz, T.

2005-01-01

In this talk the present status of neutrino oscillations is reviewed, based on a global analysis of world neutrino oscillation data from solar, atmospheric, reactor, and accelerator neutrino experiments. Furthermore, I discuss the expected improvements in the determination of neutrino parameters by future oscillation experiments within a timescale of 10 years. (author)

Neutrino oscillations in the early universe

International Nuclear Information System (INIS)

Enqvist, K.

1990-01-01

The oscillations of electron neutrinos into inert neutrinos may have resonant behaviour in the heat bath of the early Universe. It is shown that any initial neutrino asymmetry will be washed away by the oscillations. Neutrino oscillations would affect also primordial helium production, which implies stringent limits on the neutrino mixing parameters. (orig.)

Coding of Information in Limit Cycle Oscillators

Science.gov (United States)

Schleimer, Jan-Hendrik; Stemmler, Martin

2009-12-01

Starting from a general description of noisy limit cycle oscillators, we derive from the Fokker-Planck equations the linear response of the instantaneous oscillator frequency to a time-varying external force. We consider the time series of zero crossings of the oscillator’s phase and compute the mutual information between it and the driving force. A direct link is established between the phase response curve summarizing the oscillator dynamics and the ability of a limit cycle oscillator, such as a heart cell or neuron, to encode information in the timing of peaks in the oscillation.

Oscillations in neutron stars

Energy Technology Data Exchange (ETDEWEB)

Hoeye, Gudrun Kristine

1999-07-01

We have studied radial and nonradial oscillations in neutron stars, both in a general relativistic and non-relativistic frame, for several different equilibrium models. Different equations of state were combined, and our results show that it is possible to distinguish between the models based on their oscillation periods. We have particularly focused on the p-, f-, and g-modes. We find oscillation periods of II approx. 0.1 ms for the p-modes, II approx. 0.1 - 0.8 ms for the f-modes and II approx. 10 - 400 ms for the g-modes. For high-order (l (>{sub )} 4) f-modes we were also able to derive a formula that determines II{sub l+1} from II{sub l} and II{sub l-1} to an accuracy of 0.1%. Further, for the radial f-mode we find that the oscillation period goes to infinity as the maximum mass of the star is approached. Both p-, f-, and g-modes are sensitive to changes in the central baryon number density n{sub c}, while the g-modes are also sensitive to variations in the surface temperature. The g-modes are concentrated in the surface layer, while p- and f-modes can be found in all parts of the star. The effects of general relativity were studied, and we find that these are important at high central baryon number densities, especially for the p- and f-modes. General relativistic effects can therefore not be neglected when studying oscillations in neutron stars. We have further developed an improved Cowling approximation in the non-relativistic frame, which eliminates about half of the gap in the oscillation periods that results from use of the ordinary Cowling approximation. We suggest to develop an improved Cowling approximation also in the general relativistic frame. (Author)

Oscillations in neutron stars

International Nuclear Information System (INIS)

Hoeye, Gudrun Kristine

1999-01-01

We have studied radial and nonradial oscillations in neutron stars, both in a general relativistic and non-relativistic frame, for several different equilibrium models. Different equations of state were combined, and our results show that it is possible to distinguish between the models based on their oscillation periods. We have particularly focused on the p-, f-, and g-modes. We find oscillation periods of II approx. 0.1 ms for the p-modes, II approx. 0.1 - 0.8 ms for the f-modes and II approx. 10 - 400 ms for the g-modes. For high-order (l → 4) f-modes we were also able to derive a formula that determines II l+1 from II l and II l-1 to an accuracy of 0.1%. Further, for the radial f-mode we find that the oscillation period goes to infinity as the maximum mass of the star is approached. Both p-, f-, and g-modes are sensitive to changes in the central baryon number density n c , while the g-modes are also sensitive to variations in the surface temperature. The g-modes are concentrated in the surface layer, while p- and f-modes can be found in all parts of the star. The effects of general relativity were studied, and we find that these are important at high central baryon number densities, especially for the p- and f-modes. General relativistic effects can therefore not be neglected when studying oscillations in neutron stars. We have further developed an improved Cowling approximation in the non-relativistic frame, which eliminates about half of the gap in the oscillation periods that results from use of the ordinary Cowling approximation. We suggest to develop an improved Cowling approximation also in the general relativistic frame. (Author)

Atmospheric neutrino oscillations for earth tomography

International Nuclear Information System (INIS)

Winter, Walter

2016-01-01

Modern proposed atmospheric neutrino oscillation experiments, such as PINGU in the Antarctic ice or ORCA in Mediterranean sea water, aim for precision measurements of the oscillation parameters including the ordering of the neutrino masses. They can, however, go far beyond that: Since neutrino oscillations are affected by the coherent forward scattering with matter, neutrinos can provide a new view on the interior of the earth. We show that the proposed atmospheric oscillation experiments can measure the lower mantle density of the earth with a precision at the level of a few percent, including the uncertainties of the oscillation parameters and correlations among different density layers. While the earth's core is, in principle, accessible by the angular resolution, new technology would be required to extract degeneracy-free information.

Nonlinearity in oscillating bridges

Directory of Open Access Journals (Sweden)

Filippo Gazzola

2013-09-01

Full Text Available We first recall several historical oscillating bridges that, in some cases, led to collapses. Some of them are quite recent and show that, nowadays, oscillations in suspension bridges are not yet well understood. Next, we survey some attempts to model bridges with differential equations. Although these equations arise from quite different scientific communities, they display some common features. One of them, which we believe to be incorrect, is the acceptance of the linear Hooke law in elasticity. This law should be used only in presence of small deviations from equilibrium, a situation which does not occur in widely oscillating bridges. Then we discuss a couple of recent models whose solutions exhibit self-excited oscillations, the phenomenon visible in real bridges. This suggests a different point of view in modeling equations and gives a strong hint how to modify the existing models in order to obtain a reliable theory. The purpose of this paper is precisely to highlight the necessity of revisiting the classical models, to introduce reliable models, and to indicate the steps we believe necessary to reach this target.

Generalized model for Memristor-based Wien family oscillators

KAUST Repository

Talukdar, Abdul Hafiz Ibne

2012-07-23

In this paper, we report the unconventional characteristics of Memristor in Wien oscillators. Generalized mathematical models are developed to analyze four members of the Wien family using Memristors. Sustained oscillation is reported for all types though oscillating resistance and time dependent poles are present. We have also proposed an analytical model to estimate the desired amplitude of oscillation before the oscillation starts. These Memristor-based oscillation results, presented for the first time, are in good agreement with simulation results. © 2011 Elsevier Ltd.

Breaking of ensembles of linear and nonlinear oscillators

International Nuclear Information System (INIS)

Buts, V.A.

2016-01-01

Some results concerning the study of the dynamics of ensembles of linear and nonlinear oscillators are stated. It is shown that, in general, a stable ensemble of linear oscillator has a limited number of oscillators. This number has been defined for some simple models. It is shown that the features of the dynamics of linear oscillators can be used for conversion of the low-frequency energy oscillations into high frequency oscillations. The dynamics of coupled nonlinear oscillators in most cases is chaotic. For such a case, it is shown that the statistical characteristics (moments) of chaotic motion can significantly reduce potential barriers that keep the particles in the capture region

NOx Emission Reduction by Oscillating Combustion

Energy Technology Data Exchange (ETDEWEB)

None

2005-09-01

This project focuses on a new technology that reduces NOx emissions while increasing furnace efficiency for both air- and oxygen-fired furnaces. Oscillating combustion is a retrofit technology that involves the forced oscillation of the fuel flow rate to a furnace. These oscillations create successive, fuel-rich and fuel-lean zones within the furnace.

Harmonic oscillations, chaos and synchronization in systems consisting of Van der Pol oscillator coupled to a linear oscillator

International Nuclear Information System (INIS)

Woafo, P.

1999-12-01

This paper deals with the dynamics of a model describing systems consisting of the classical Van der Pol oscillator coupled gyroscopically to a linear oscillator. Both the forced and autonomous cases are considered. Harmonic response is investigated along with its stability boundaries. Condition for quenching phenomena in the autonomous case is derived. Neimark bifurcation is observed and it is found that our model shows period doubling and period-m sudden transitions to chaos. Synchronization of two and more systems in their chaotic regime is presented. (author)

Low-frequency oscillations in radiative-convective models

Energy Technology Data Exchange (ETDEWEB)

Hu, Qi; Randall, D.A.

1991-12-31

Although eastward propagation is usually regarded as an essential feature of the low-frequency ``Madden-Julian oscillation`` observed in the tropical atmosphere, many observations indicate that there is an important stationary or quasi-stationary component of the oscillation. Yasunari (1979), for example, investigated the stationary 30--60 day variation in upper tropospheric cloudiness in the Asian summer monsoon region. In a case study of the 30--60 day oscillation. Hsu et al. (1990) found a strong stationary oscillation of the divergence, outgoing longwave mdiadon and other fields. A recent observational study by Weickmann and Khalsa (1990) offers further evidence that the Madden-Julian oscillation has an important stationary component. In this paper, we present evidence that intraseasonal oscillations can be produced by local radiative and convective processes. This suggests that the observed propagating Madden-Julian wave is produced by interactions between these local processes and the large scale motion field, and is not essential for the existence of the observed oscillation.

Low-frequency oscillations in radiative-convective models

Energy Technology Data Exchange (ETDEWEB)

Hu, Qi; Randall, D.A.

1991-01-01

Although eastward propagation is usually regarded as an essential feature of the low-frequency Madden-Julian oscillation'' observed in the tropical atmosphere, many observations indicate that there is an important stationary or quasi-stationary component of the oscillation. Yasunari (1979), for example, investigated the stationary 30--60 day variation in upper tropospheric cloudiness in the Asian summer monsoon region. In a case study of the 30--60 day oscillation. Hsu et al. (1990) found a strong stationary oscillation of the divergence, outgoing longwave mdiadon and other fields. A recent observational study by Weickmann and Khalsa (1990) offers further evidence that the Madden-Julian oscillation has an important stationary component. In this paper, we present evidence that intraseasonal oscillations can be produced by local radiative and convective processes. This suggests that the observed propagating Madden-Julian wave is produced by interactions between these local processes and the large scale motion field, and is not essential for the existence of the observed oscillation.

Oscillating nonlinear acoustic shock waves

DEFF Research Database (Denmark)

Gaididei, Yuri; Rasmussen, Anders Rønne; Christiansen, Peter Leth

2016-01-01

We investigate oscillating shock waves in a tube using a higher order weakly nonlinear acoustic model. The model includes thermoviscous effects and is non isentropic. The oscillating shock waves are generated at one end of the tube by a sinusoidal driver. Numerical simulations show that at resona......We investigate oscillating shock waves in a tube using a higher order weakly nonlinear acoustic model. The model includes thermoviscous effects and is non isentropic. The oscillating shock waves are generated at one end of the tube by a sinusoidal driver. Numerical simulations show...... polynomial in the space and time variables, we find analytical approximations to the observed single shock waves in an infinitely long tube. Using perturbation theory for the driven acoustic system approximative analytical solutions for the off resonant case are determined....

High-power parametric amplification of 11.8-fs laser pulses with carrier-envelope phase control

NARCIS (Netherlands)

Zinkstok, R.T.; Witte, S.; Hogervorst, W.; Eikema, K.S.E.

2005-01-01

Phase-stable parametric chirped-pulse amplification of ultrashort pulses from a carrier-envelope phase-stabilized mode-locked Ti:sapphire oscillator (11.0 fs) to 0.25 mJ/pulse at 1 kHz is demonstrated. Compression with a grating compressor and a LCD shaper yields near-Fourier-limited 11.8-fs pulses

A novel optogenetically tunable frequency modulating oscillator.

Directory of Open Access Journals (Sweden)

Tarun Mahajan

Full Text Available Synthetic biology has enabled the creation of biological reconfigurable circuits, which perform multiple functions monopolizing a single biological machine; Such a system can switch between different behaviours in response to environmental cues. Previous work has demonstrated switchable dynamical behaviour employing reconfigurable logic gate genetic networks. Here we describe a computational framework for reconfigurable circuits in E.coli using combinations of logic gates, and also propose the biological implementation. The proposed system is an oscillator that can exhibit tunability of frequency and amplitude of oscillations. Further, the frequency of operation can be changed optogenetically. Insilico analysis revealed that two-component light systems, in response to light within a frequency range, can be used for modulating the frequency of the oscillator or stopping the oscillations altogether. Computational modelling reveals that mixing two colonies of E.coli oscillating at different frequencies generates spatial beat patterns. Further, we show that these oscillations more robustly respond to input perturbations compared to the base oscillator, to which the proposed oscillator is a modification. Compared to the base oscillator, the proposed system shows faster synchronization in a colony of cells for a larger region of the parameter space. Additionally, the proposed oscillator also exhibits lesser synchronization error in the transient period after input perturbations. This provides a strong basis for the construction of synthetic reconfigurable circuits in bacteria and other organisms, which can be scaled up to perform functions in the field of time dependent drug delivery with tunable dosages, and sets the stage for further development of circuits with synchronized population level behaviour.

Separation control with fluidic oscillators in water

Science.gov (United States)

Schmidt, H.-J.; Woszidlo, R.; Nayeri, C. N.; Paschereit, C. O.

2017-08-01

The present study assesses the applicability of fluidic oscillators for separation control in water. The first part of this work evaluates the properties of the fluidic oscillators including frequency, cavitation effects, and exerted thrust. Derived from the governing internal dynamics, the oscillation frequency is found to scale directly with the jet's exit velocity and the size of the fluidic oscillator independent of the working fluid. Frequency data from various experiments collapse onto a single curve. The occurrence of cavitation is examined by visual inspection and hydrophone measurements. The oscillation frequency is not affected by cavitation because it does not occur inside the oscillators. The spectral information obtained with the hydrophone provide a reliable indicator for the onset of cavitation at the exit. The performance of the fluidic oscillators for separation control on a bluff body does not seem to be affected by the presence of cavitation. The thrust exerted by an array of fluidic oscillators with water as the working fluid is measured to be even larger than theoretically estimated values. The second part of the presented work compares the performance of fluidic oscillators for separation control in water with previous results in air. The array of fluidic oscillators is installed into the rear end of a bluff body model. The drag improvements based on force balance measurements agree well with previous wind tunnel experiments on the same model. The flow field is examined by pressure measurements and with particle image velocimetry. Similar performance and flow field characteristics are observed in both water and air.

Circuit oscillations in odor perception and memory.

Science.gov (United States)

Kay, Leslie M

2014-01-01

Olfactory system neural oscillations as seen in the local field potential have been studied for many decades. Recent research has shown that there is a functional role for the most studied gamma oscillations (40-100Hz in rats and mice, and 20Hz in insects), without which fine odor discrimination is poor. When these oscillations are increased artificially, fine discrimination is increased, and when rats learn difficult and highly overlapping odor discriminations, gamma is increased in power. Because of the depth of study on this oscillation, it is possible to point to specific changes in neural firing patterns as represented by the increase in gamma oscillation amplitude. However, we know far less about the mechanisms governing beta oscillations (15-30Hz in rats and mice), which are best associated with associative learning of responses to odor stimuli. These oscillations engage every part of the olfactory system that has so far been tested, plus the hippocampus, and the beta oscillation frequency band is the one that is most reliably coherent with other regions during odor processing. Respiratory oscillations overlapping with the theta frequency band (2-12Hz) are associated with odor sniffing and normal breathing in rats. They also show coupling in some circumstances between olfactory areas and rare coupling between the hippocampus and olfactory bulb. The latter occur in specific learning conditions in which coherence strength is negatively or positively correlated with performance, depending on the task. There is still much to learn about the role of neural oscillations in learning and memory, but techniques that have been brought to bear on gamma oscillations (current source density, computational modeling, slice physiology, behavioral studies) should deliver much needed knowledge of these events. © 2014 Elsevier B.V. All rights reserved.

Quantum oscillations of conductivity in bismuth wires

International Nuclear Information System (INIS)

Condrea, Elena

2011-01-01

Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38 %) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. A simple evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.

On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

Energy Technology Data Exchange (ETDEWEB)

Kristie Cooper; Gary Pickrell; Anbo Wang

2005-11-01

This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

Theory of a quantum anharmonic oscillator

International Nuclear Information System (INIS)

Carusotto, S.

1988-01-01

The time evolution of a quantum single-quartic anharmonic oscillator is considered. The study is carried on in operational form by use of the raising and lowering operators of the oscillator. The equation of motion is solved by application of a new integration method based on iteration techniques, and the rigorous solutions that describe the time development of the displacement and momentum operators of the oscillator are obtained. These operators are presented as a Laplace transform and a subsequent inverse Laplace transform of suitable functionals. Finally, the results are employed to describe the time evolution of a quasiclassical anharmonic oscillator

Passive mode locking of a femtosecond Ti:sapphire laser with pulsed synchronous pumping by a finite train of picosecond pulses

International Nuclear Information System (INIS)

Borisevich, N A; Buganov, O V; Tikhomirov, S A; Tolstorozhev, G B; Shkred, G L

1999-01-01

An analysis is made, with the aid of the self-consistent nonlinear ABCD matrix method, of the specific features of the mechanism of passive mode locking of a femtosecond Ti:sapphire laser under conditions of pulsed synchronous pumping. The conditions of stable laser operation are studied. It is proposed to use an additional aperture as an element of negative feedback for the stabilisation of passive mode locking. Practical recommendations concerning the optimisation of a femtosecond laser are given. (control of laser radiation parameters)

Symmetries and symmetry-breaking in oscillator ensembles

International Nuclear Information System (INIS)

Ujjwal, Sangeeta R.; Ramaswamy, Ram

2017-01-01

The behaviour of collections of oscillators has also been of interest for at least a few centuries as well. As it happens, Huygens described the interaction of two pendulums that resulted in their synchrony, namely the entrainment of one oscillator by the other. He gave a fairly accurate physical explanation for the process, namely that the pendulums oscillated in 'sympathy', adjusting their rhythms as a consequence of the weak coupling between them. The study of synchrony has thus been of interest since long, given the wide variety of systems that show 'sync'. These range from simple mechanical oscillators such as pendulums, to chemical and biological oscillators, coupled Josephson junctions and so on. In short, any system that is capable of showing sustained oscillations is also potentially able to synchronise

Reactor Neutrino Oscillations: KamLAND and KASKA

International Nuclear Information System (INIS)

Suekane, F.

2006-01-01

Nuclear reactors generate a huge number of low energy ν-bar e 's. The reactor neutrinos have been used to study properties of neutrinos since its discovery a half century ago. Recently, KamLAND group finally discovered reactor neutrino oscillation with average baseline 180 km. According to the 3 flavor scheme of standard theory and measured oscillation parameters so far, the reactor neutrino is expected to perform another type of small oscillation at a baseline 1.8 km. KASKA experiment is a project to detect this small oscillation and to measure the last neutrino mixing angle θ 13 by using the world most powerful reactor complex, Kashiwazaki-Kariwa nuclear power station. In this proceedings, phenomena of neutrino oscillation and the two reactor oscillation experiments, KamLAND and KASKA, are introduced

Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver

Directory of Open Access Journals (Sweden)

S. Coco

2008-01-01

Full Text Available This paper describes the design and fabrication of a Ka Band PLL DRO having a fundamental oscillation frequency of 19.250 GHz, used as local oscillator in the low-noise block of a down converter (LNB for an EHF band receiver. Apposite circuital models have been created to describe the behaviour of the dielectric resonator and of the active component used in the oscillator core. The DRO characterization and measurements have shown very good agreement with simulation results. A good phase noise performance is obtained by using a very high Q dielectric resonator.

State space modeling of Memristor-based Wien oscillator

KAUST Repository

Talukdar, Abdul Hafiz Ibne; Radwan, Ahmed G.; Salama, Khaled N.

2011-01-01

State space modeling of Memristor based Wien 'A' oscillator has been demonstrated for the first time considering nonlinear ion drift in Memristor. Time dependant oscillating resistance of Memristor is reported in both state space solution and SPICE simulation which plausibly provide the basis of realizing parametric oscillation by Memristor based Wien oscillator. In addition to this part Memristor is shown to stabilize the final oscillation amplitude by means of its nonlinear dynamic resistance which hints for eliminating diode in the feedback network of conventional Wien oscillator. © 2011 IEEE.

State space modeling of Memristor-based Wien oscillator

KAUST Repository

Talukdar, Abdul Hafiz Ibne

2011-12-01

State space modeling of Memristor based Wien \\'A\\' oscillator has been demonstrated for the first time considering nonlinear ion drift in Memristor. Time dependant oscillating resistance of Memristor is reported in both state space solution and SPICE simulation which plausibly provide the basis of realizing parametric oscillation by Memristor based Wien oscillator. In addition to this part Memristor is shown to stabilize the final oscillation amplitude by means of its nonlinear dynamic resistance which hints for eliminating diode in the feedback network of conventional Wien oscillator. © 2011 IEEE.

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

Science.gov (United States)

Wang, Rongrong; Guo, Dan; Xie, Guoxin; Pan, Guoshun

2016-01-01

Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanoribbons. However, very limited attention has been paid to the step formation in manufacturing process. In the present work, investigations have been conducted into this step formation mechanism on the sapphire c (0001) surface by using both experiments and simulations. The step evolutions at different stages in the polishing process were investigated with atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). The simulation of idealized steps was constructed theoretically on the basis of experimental results. It was found that (1) the subtle atomic structures (e.g., steps with different sawteeth, as well as steps with straight and zigzag edges), (2) the periodicity and (3) the degree of order of the steps were all dependent on surface composition and miscut direction (step edge direction). A comparison between experimental results and idealized step models of different surface compositions has been made. It has been found that the structure on the polished surface was in accordance with some surface compositions (the model of single-atom steps: Al steps or O steps). PMID:27444267

Two particle states, lepton mixing and oscillations

CERN Document Server

Kachelriess, M; Schönert, S

2000-01-01

Discussions of lepton mixing and oscillations consider generally only flavor oscillations of neutrinos and neglect the accompanying charged leptons. In cases of experimental interest like pion or nuclear beta decay an oscillation pattern is expected indeed only for neutrinos if only one of the two produced particles is observed. We argue that flavor oscillations of neutrinos without detecting the accompanying lepton is a peculiarity of the two-particle states $|l\

Optical oscillator-amplifier laser configuration

International Nuclear Information System (INIS)

McAllister, G.L.

1975-01-01

A laser is described that has incorporated therein an oscillator formed by a pair of mirrors, at least one of the mirrors being positioned outside of the envelope. The mirrors are dimensioned and spaced from each other so that the resonator has a relatively low Fresnel number and is operated unstably. The entire surface of one of these mirrors is convex and diffracts a portion of the energy outside of the oscillator region. Also incorporated into the laser is an amplifier region defined by a separate pair of mirrors which receive the energy diffracted from the oscillator region. The second pair of mirrors form an optical system with a high Fresnel number. A filter, modulator or other control for the laser signal may be placed outside the laser envelope in the optical path of the oscillator

Activity patterns in networks stabilized by background oscillations.

Science.gov (United States)

Hoppensteadt, Frank

2009-07-01

The brain operates in a highly oscillatory environment. We investigate here how such an oscillating background can create stable organized behavior in an array of neuro-oscillators that is not observable in the absence of oscillation, much like oscillating the support point of an inverted pendulum can stabilize its up position, which is unstable without the oscillation. We test this idea in an array of electronic circuits coming from neuroengineering: we show how the frequencies of the background oscillation create a partition of the state space into distinct basins of attraction. Thus, background signals can stabilize persistent activity that is otherwise not observable. This suggests that an image, represented as a stable firing pattern which is triggered by a voltage pulse and is sustained in synchrony or resonance with the background oscillation, can persist as a stable behavior long after the initial stimulus is removed. The background oscillations provide energy for organized behavior in the array, and these behaviors are categorized by the basins of attraction determined by the oscillation frequencies.

A Conspiracy of Oscillators

DEFF Research Database (Denmark)

Hjorth, Poul G.

2008-01-01

We discuss nonlinear mechanical systems containing several oscillators whose frequecies are all much higher than frequencies associated with the remaining degrees of freedom. In this situation a near constant of the motion, an adiabatic invariant, exists which is the sum of all the oscillator...... actions. The phenomenon is illustrated, and calculations of the small change of the adiabatic invariant is outlined....

Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

Science.gov (United States)

Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

2017-07-01

We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

Multivariate Time Series Decomposition into Oscillation Components.

Science.gov (United States)

Matsuda, Takeru; Komaki, Fumiyasu

2017-08-01

Many time series are considered to be a superposition of several oscillation components. We have proposed a method for decomposing univariate time series into oscillation components and estimating their phases (Matsuda & Komaki, 2017 ). In this study, we extend that method to multivariate time series. We assume that several oscillators underlie the given multivariate time series and that each variable corresponds to a superposition of the projections of the oscillators. Thus, the oscillators superpose on each variable with amplitude and phase modulation. Based on this idea, we develop gaussian linear state-space models and use them to decompose the given multivariate time series. The model parameters are estimated from data using the empirical Bayes method, and the number of oscillators is determined using the Akaike information criterion. Therefore, the proposed method extracts underlying oscillators in a data-driven manner and enables investigation of phase dynamics in a given multivariate time series. Numerical results show the effectiveness of the proposed method. From monthly mean north-south sunspot number data, the proposed method reveals an interesting phase relationship.

Augmenting cognition by neuronal oscillations

NARCIS (Netherlands)

Horschig, J.M.; Zumer, J.; Bahramisharif, A.

2014-01-01

Cortical oscillations have been shown to represent fundamental functions of a working brain, e.g., communication, stimulus binding, error monitoring, and inhibition, and are directly linked to behavior. Recent studies intervening with these oscillations have demonstrated effective modulation of both

Experiments with elasto-plastic oscillator

DEFF Research Database (Denmark)

Randrup-thomsen, Søren; Ditlevsen, Ove Dalager

1996-01-01

Plastic displacements of a Gaussian white noise excited three degrees of freedom non-ideal elasto-plastic oscillator are measured in laboratory experiments and the plastic displacements are compared to computer simulated results for the corresponding ideal elasto-plastic oscillator. The comparative...

Experiments with elasto-plastic oscillator

DEFF Research Database (Denmark)

Randrup-Thomsen, S.; Ditlevsen, Ove Dalager

1999-01-01

Plastic displacements of a Gaussian white noise excited three degrees of freedom non-ideal elasto-plastic oscillator are measured in laboratory experiments and the plastic displacements are compared to computer simulated results for the corresponding ideal elasto-plastic oscillator. The comparative...

MEDIA PEMBELAJARAN ANALOG OSCILLATOR VIRTUAL LABOLATORY

Directory of Open Access Journals (Sweden)

Aji Widhi Wibowo

2016-01-01

Full Text Available The purpose of this research is to design and implement a Virtual Labolatory Materials Signal Processing Sub discussion 'Oscillator' Analog as Newspapers. Developers using the model Sutopo Ariesto Hadi (2003 as a method to produce the product. Consists of six stages: concept, design, material collecting, assembly, testing and distribution. This results in the development of Virtual media Labolatory with material 'Oscillator' with the results of 4 (four practicum digital oscillator, namely (1 Oscillator Wien Bridge, (2 Colpitts oscillator, (3 Oscillator Hartley and (4 astable multivibrator. Another result is that a user be jobsheet practicum. There are two types, namely: (1 jobsheet grip lecturers and (2 jobsheet for students. In Jobsheet there is a short book that contains the Manual on procedures for the use of virtual labolatory when practical and anatomical description of the product. Virtual Labolatory consists of the initial page (flash scren, the main page (home, pages and pages about the developer's lab referring to the story board. There are four (4 test are: (1 the truth polarity capacitor, (2 the connection (wiring, (3 mode frequency and time in the meter frequency

Multimodal neuroimaging measures and intelligence influence pedophile child sexual offense behavior.

Science.gov (United States)

Lett, Tristram A; Mohnke, Sebastian; Amelung, Till; Brandl, Eva J; Schiltz, Kolja; Pohl, Alexander; Gerwinn, Hannah; Kärgel, Christian; Massau, Claudia; Tenbergen, Gilian; Wittfoth, Matthias; Kneer, Jonas; Beier, Klaus M; Walter, Martin; Ponseti, Jorge; Krüger, Tillmann H C; Schiffer, Boris; Walter, Henrik

2018-06-04

Pedophilia is a heterogeneous disorder for which the neurobiological correlates are not well established. In particular, there are no biological markers identifying individuals with high risk to commit child sexual offense (CSO). Pedophiles with CSO (P+CSO; N = 73), pedophiles without CSO (P-CSO; N = 77), and non-pedophilic controls (NPC; N = 133) were assessed using multimodal structural neuroimaging measures including: cortical thickness (CT), surface area (SA), and white matter fractional anisotropy (FA), as well as full scale IQ (FSIQ) performance. Cortex-wise mediation analyses were used to assess the relationships among brain structure, FSIQ and CSO behavior. Lower FSIQ performance was strongly predict with P+CSO (Wald Chi 2 = 13.0, p = 3.1 × 10 -5 ). P+CSO had lower CT in the right motor cortex and pronounced reductions in SA spanning the bilateral frontal, temporal, cingulate, and insular regions (P FWE-corrected < 0.05). P+CSO also had lower FA particularly in the corpus callosum (P FWE-corrected < 0.05). The relationship between SA and P+CSO was significantly mediated by FSIQ, particularly in the prefrontal and anterior insular cortices (P FWE-corrected < 0.05). Within P+CSO, left prefrontal and right anterior cingulate SA negatively correlated with number of CSOs (P FWE-corrected < 0.05). This study demonstrates converging neurobiological findings in which P+CSO had lower FSIQ performance, reduced CT, reduced SA, and reduced FA, compared to P-CSO as well as NPC. Further, FSIQ potentially mediates abuse by pedophiles via aberrant SA, whereas the CT and FA associations were independent of FSIQ differences. These findings suggest aberrant neuroanatomy and lower intelligence as a potential core feature underlying child sexual abuse behavior by pedophiles. Copyright © 2018. Published by Elsevier B.V.

New neutrino oscillation results from NOVA

CERN Multimedia

CERN. Geneva

2018-01-01

Neutrinos oscillate among flavors as they travel because a neutrino of a particular flavor is also a superposition of multiple neutrinos with slightly different masses.  The interferometric nature of oscillations allows these tiny mass differences to be measured, along with the parameters of the PMNS matrix which governs the mixing. However, since neutrinos only interact weakly, a powerful neutrino source and massive detectors are required to measure them. In this talk I will show recently updated results from NOvA, a long-baseline neutrino oscillation experiment at Fermilab with two functionally identical scintillator detectors. I will present measurements of muon neutrino disappearance and electron neutrino appearance, and what constraints those measurements put on the remaining open questions in neutrino oscillations: Is the neutrino mass hierarchy "normal" or "inverted?" Do neutrino oscillations violate CP symmetry? Is the mixing in the atmospheric sector maximal? The recent update includes 50%...

Disturbed solution of the El Niño-southern oscillation sea—air delayed oscillator

International Nuclear Information System (INIS)

Xie Feng; Lin Wan-Tao; Lin Yi-Hua; Mo Jia-Qi

2011-01-01

A class of delayed oscillators of El Niño-southern oscillation (ENSO) models is considered. Using the delayed theory, the perturbed theory and other methods, the asymptotic expansions of the solutions for ENSO models are obtained and the asymptotic behaviour of solution of corresponding problem is studied. (general)

Voltage-driven quantum oscillations in graphene

International Nuclear Information System (INIS)

Yampol'skii, V A; Savel'ev, S; Nori, Franco

2008-01-01

We predict unusual (for non-relativistic quantum mechanics) electron states in graphene, which are localized within a finite-width potential barrier. The density of localized states in the sufficiently high and/or wide graphene barrier exhibits a number of singularities at certain values of the energy. Such singularities provide quantum oscillations of both the transport (e.g. conductivity) and thermodynamic properties of graphene-when increasing the barrier height and/or width, similarly to the well-known Shubnikov-de-Haas (SdH) oscillations of conductivity in pure metals. However, here the SdH-like oscillations are driven by an electric field instead of the usual magnetically driven SdH-oscillations

Brownian parametric oscillators

Science.gov (United States)

Zerbe, Christine; Jung, Peter; Hänggi, Peter

1994-05-01

We discuss the stochastic dynamics of dissipative, white-noise-driven Floquet oscillators, characterized by a time-periodic stiffness. Thus far, little attention has been paid to these exactly solvable nonstationary systems, although they carry a rich potential for several experimental applications. Here, we calculate and discuss the mean values and variances, as well as the correlation functions and the Floquet spectrum. As one main result, we find for certain parameter values that the fluctuations of the position coordinate are suppressed as compared to the equilibrium value of a harmonic oscillator (parametric squeezing).

Recent Progress in Silicon Mems Oscillators

Science.gov (United States)

2008-12-01

MEMS oscillator. As shown, a MEMS resonator is connected to an IC. The reference oscillator, which is basically a transimpedance amplifier ...small size), and (3) DC bias voltage required to operate the resonators. As a result, instead of Colpitts or Pierce architecture, a transimpedence ... amplifier is typically used for sustain the oscillation. The frequency of the resonators is determined by both material properties and geometry of

Chemical Oscillations

Indian Academy of Sciences (India)

IMTECH),. Chandigarh. Praveen Kumar is pursuing his PhD in chemical dynamics at. Panjab University,. Chandigarh. Keywords. Chemical oscillations, autoca-. talYSis, Lotka-Volterra model, bistability, hysteresis, Briggs-. Rauscher reaction.

Chemical Oscillations

Indian Academy of Sciences (India)

the law of mass-action that every simple reaction approaches ... from thermodynamic equilibrium. Such oscillating systems cor- respond to thermodynamically open systems. .... experimentally observable, and the third is always unstable.

THE IMPACT OF FREQUENCY STANDARDS ON COHERENCE IN VLBI AT THE HIGHEST FREQUENCIES

Energy Technology Data Exchange (ETDEWEB)

Rioja, M.; Dodson, R. [ICRAR, University of Western Australia, Perth (Australia); Asaki, Y. [Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Chuou, Sagamihara, Kanagawa 252-5210 (Japan); Hartnett, J. [School of Physics, University of Western Australia, Perth (Australia); Tingay, S., E-mail: maria.rioja@icrar.org [ICRAR, Curtin University, Perth (Australia)

2012-10-01

We have carried out full imaging simulation studies to explore the impact of frequency standards in millimeter and submillimeter very long baseline interferometry (VLBI), focusing on the coherence time and sensitivity. In particular, we compare the performance of the H-maser, traditionally used in VLBI, to that of ultra-stable cryocooled sapphire oscillators over a range of observing frequencies, weather conditions, and analysis strategies. Our simulations show that at the highest frequencies, the losses induced by H-maser instabilities are comparable to those from high-quality tropospheric conditions. We find significant benefits in replacing H-masers with cryocooled sapphire oscillator based frequency references in VLBI observations at frequencies above 175 GHz in sites which have the best weather conditions; at 350 GHz we estimate a 20%-40% increase in sensitivity over that obtained when the sites have H-masers, for coherence losses of 20%-10%, respectively. Maximum benefits are to be expected by using co-located Water Vapor Radiometers for atmospheric correction. In this case, we estimate a 60%-120% increase in sensitivity over the H-maser at 350 GHz.

The Duffing oscillator with damping

DEFF Research Database (Denmark)

Johannessen, Kim

2015-01-01

An analytical solution to the differential equation describing the Duffing oscillator with damping is presented. The damping term of the differential equation and the initial conditions satisfy an algebraic equation, and thus the solution is specific for this type of damping. The nonlinear term...... of the differential equation is allowed to be considerable compared to the linear term. The solution is expressed in terms of the Jacobi elliptic functions by including a parameter-dependent elliptic modulus. The analytical solution is compared to the numerical solution, and the agreement is found to be very good....... It is established that the period of oscillation is shorter compared to that of a linearized model but increasing with time and asymptotically approaching the period of oscillation of the linear damped model. An explicit expression for the period of oscillation has been derived, and it is found to be very accurate....

Transient voltage oscillations in coils

International Nuclear Information System (INIS)

Chowdhuri, P.

1985-01-01

Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

Electronically tunable RC sinusoidal oscillators

International Nuclear Information System (INIS)

Florescu, Valeriu

2008-01-01

This paper presents two types of active configurations for realizing electronically tunable RC sinusoidal oscillators. The type-1 network employs two grounded scaled resistances KR 1 and KR 2 , where K is scaling factor. The frequency of oscillation W 0 is controlled conveniently by adjusting K, since W 0 appears in the form W 0 =1/K √ R 1 C 1 R 2 C 2 . For realizing the scaled resistances, an active configuration is proposed, which realizes KR 1 =R 1 /(1+f(V B )), where f(V B ) denotes a function of a controlling voltage V B . Thus the frequency tuning can be effected by controlling a voltage V B . The type-2 oscillator uses two periodically switched conductances. It is shown that the tuning of oscillation frequency can be done by varying the pulse width-to-period ratio (t/T) of the periodically switched conductances. (author)

Oscillators and operational amplifiers

OpenAIRE

Lindberg, Erik

2005-01-01

A generalized approach to the design of oscillators using operational amplifiers as active elements is presented. A piecewise-linear model of the amplifier is used so that it make sense to investigate the eigenvalues of the Jacobian of the differential equations. The characteristic equation of the general circuit is derived. The dynamic nonlinear transfer characteristic of the amplifier is investigated. Examples of negative resistance oscillators are discussed.

Phase noise and frequency stability in oscillators

CERN Document Server

Rubiola, Enrico

2009-01-01

Presenting a comprehensive account of oscillator phase noise and frequency stability, this practical text is both mathematically rigorous and accessible. An in-depth treatment of the noise mechanism is given, describing the oscillator as a physical system, and showing that simple general laws govern the stability of a large variety of oscillators differing in technology and frequency range. Inevitably, special attention is given to amplifiers, resonators, delay lines, feedback, and flicker (1/f) noise. The reverse engineering of oscillators based on phase-noise spectra is also covered, and end-of-chapter exercises are given. Uniquely, numerous practical examples are presented, including case studies taken from laboratory prototypes and commercial oscillators, which allow the oscillator internal design to be understood by analyzing its phase-noise spectrum. Based on tutorials given by the author at the Jet Propulsion Laboratory, international IEEE meetings, and in industry, this is a useful reference for acade...

A family of memristor-based reactance-less oscillators

KAUST Repository

Zidan, Mohammed A.

2013-05-03

In this paper, we present for the first time a family of memristor-based reactance-less oscillators (MRLOs). The proposed oscillators require no reactive components, that is, inductors or capacitors, rather, the ‘resistance storage’ property of memristor is exploited to generate the oscillation. Different types of MRLO family are presented, and for each type, closed form expressions are derived for the oscillation condition, oscillation frequency, and range of oscillation. Derived equations are further verified using transient circuit simulations. A comparison between different MRLO types is also discussed. In addition, detailed fabrication steps of a memristor device and experimental results for the first MRLO physical realization are presented.

A family of memristor-based reactance-less oscillators

KAUST Repository

Zidan, Mohammed A.; Omran, Hesham; Smith, Casey; Syed, Ahad; Radwan, Ahmed Gomaa; Salama, Khaled N.

2013-01-01

In this paper, we present for the first time a family of memristor-based reactance-less oscillators (MRLOs). The proposed oscillators require no reactive components, that is, inductors or capacitors, rather, the ‘resistance storage’ property of memristor is exploited to generate the oscillation. Different types of MRLO family are presented, and for each type, closed form expressions are derived for the oscillation condition, oscillation frequency, and range of oscillation. Derived equations are further verified using transient circuit simulations. A comparison between different MRLO types is also discussed. In addition, detailed fabrication steps of a memristor device and experimental results for the first MRLO physical realization are presented.

Gamma oscillations: precise temporal coordination without a metronome.

Science.gov (United States)

Nikolić, Danko; Fries, Pascal; Singer, Wolf

2013-02-01

Gamma oscillations in the brain should not be conceptualized as a sine wave with constant oscillation frequency. Rather, these oscillations serve to concentrate neuronal discharges to particular phases of the oscillation cycle and thereby provide the substrate for various, functionally relevant synchronization phenomena. Copyright © 2012 Elsevier Ltd. All rights reserved.

Stochastic and Chaotic Relaxation Oscillations

NARCIS (Netherlands)

Grasman, J.; Roerdink, J.B.T.M.

1988-01-01

For relaxation oscillators stochastic and chaotic dynamics are investigated. The effect of random perturbations upon the period is computed. For an extended system with additional state variables chaotic behavior can be expected. As an example, the Van der Pol oscillator is changed into a

A Class-F CMOS Oscillator

NARCIS (Netherlands)

Babaie, M.; Staszewski, R.B.

2013-01-01

An oscillator topology demonstrating an improved phase noise performance is proposed in this paper. It exploits the time-variant phase noise model with insights into the phase noise conversion mechanisms. The proposed oscillator is based on enforcing a pseudo-square voltage waveform around the LC

Neutrino Oscillations Physics

Science.gov (United States)

Fogli, Gianluigi

2005-06-01

We review the status of the neutrino oscillations physics, with a particular emphasis on the present knowledge of the neutrino mass-mixing parameters. We consider first the νμ → ντ flavor transitions of atmospheric neutrinos. It is found that standard oscillations provide the best description of the SK+K2K data, and that the associated mass-mixing parameters are determined at ±1σ (and NDF = 1) as: Δm2 = (2.6 ± 0.4) × 10-3 eV2 and sin 2 2θ = 1.00{ - 0.05}{ + 0.00} . Such indications, presently dominated by SK, could be strengthened by further K2K data. Then we point out that the recent data from the Sudbury Neutrino Observatory, together with other relevant measurements from solar and reactor neutrino experiments, in particular the KamLAND data, convincingly show that the flavor transitions of solar neutrinos are affected by Mikheyev-Smirnov-Wolfenstein (MSW) effects. Finally, we perform an updated analysis of two-family active oscillations of solar and reactor neutrinos in the standard MSW case.

Neutrino oscillations in the Kerr-Newman spacetime

International Nuclear Information System (INIS)

Ren Jun; Zhang Chengmin

2010-01-01

The mass neutrino oscillation in the Kerr-Newman (K-N) spacetime is studied in the plane θ = θ 0 , and general equations of the oscillation phases are given. The effect of the rotation and electric charge on the phase is presented. Then, we consider three special cases. (1) The neutrinos travel along the geodesics with angular momentum L = aE in the equatorial plane. (2) The neutrinos travel along the geodesics with L = 0 in the equatorial plane. (3) The neutrinos travel along the radial geodesics in the direction θ = 0. Finally, we calculate the proper oscillation length in the K-N spacetime. The effect of the gravitational field on the oscillation length is embodied in the gravitational red shift factor. When the neutrino travels out of the gravitational field, a blue shift of the oscillation length takes place. We discuss the variation of the oscillation length influenced by the gravitational field strength, the rotation a 2 and charge Q.

Oscillator strengths for neutral technetium

International Nuclear Information System (INIS)

Garstang, R.H.

1981-01-01

Oscillator strengths have been calculated for most of the spectral lines of TcI which are of interest in the study of stars of spectral type S. Oscillator strengths have been computed for the corresponding transitions in MnI as a partial check of the technetium calculations

Hyperchaos in coupled Colpitts oscillators

DEFF Research Database (Denmark)

Cenys, Antanas; Tamasevicius, Arunas; Baziliauskas, Antanas

2003-01-01

The paper suggests a simple solution of building a hyperchaotic oscillator. Two chaotic Colpitts oscillators, either identical or non-identical ones are coupled by means of two linear resistors R-k. The hyperchaotic output signal v(t) is a linear combination, specifically the mean of the individual...

Oscillations of neutral B mesons systems

CERN Document Server

Boucrot, J.

1999-01-01

The oscillation phenomenon in the neutral B mesons systems is now well established. The motivations and principles of the measurements are given; then the most recent results from the LEP experiments, the CDF collaboration at Fermilab and the SLD collaboration at SLAC are reviewed. The present world average of the $\\bd$ meson oscillation frequency is $\\dmd = 0.471 \\pm 0.016 \\ps$ and the lower limit on the $\\bs$ oscillation frequency is

Chimera States in Mechanical Oscillator Networks

OpenAIRE

Martens, Erik Andreas; Thutupalli, Shashi; Fourrière, Antoine; Hallatschek, Oskar

2013-01-01

The synchronization of coupled oscillators is a fascinating manifestation of self-organization that nature uses to orchestrate essential processes of life, such as the beating of the heart. Although it was long thought that synchrony and disorder were mutually exclusive steady states for a network of identical oscillators, numerous theoretical studies in recent years have revealed the intriguing possibility of “chimera states,” in which the symmetry of the oscillator population is broken into...

Epitactical FeAl films on sapphire and their magnetic properties; Epitaktische FeAl-Filme auf Saphir und ihre magnetischen Eigenschaften

Energy Technology Data Exchange (ETDEWEB)

Trautvetter, Moritz

2011-05-05

In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr{sup +} irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

Introduction to classical and quantum harmonic oscillators

CERN Document Server

Bloch, Sylvan C

2013-01-01

From conch shells to lasers . harmonic oscillators, the timeless scientific phenomenon As intriguing to Galileo as they are to scientists today, harmonic oscillators have provided a simple and compelling paradigm for understanding the complexities that underlie some of nature's and mankind's most fascinating creations. From early string and wind instruments fashioned from bows and seashells to the intense precision of lasers, harmonic oscillators have existed in various forms, as objects of beauty and scientific use. And harmonic oscillation has endured as one of science's most fascinating con

Coherent states for oscillators of non-conventional statistics

International Nuclear Information System (INIS)

Dao Vong Duc; Nguyen Ba An

1998-12-01

In this work we consider systematically the concept of coherent states for oscillators of non-conventional statistics - parabose oscillator, infinite statistics oscillator and generalised q-deformed oscillator. The expressions for the quadrature variances and particle number distribution are derived and displayed graphically. The obtained results show drastic changes when going from one statistics to another. (author)

Destructive impact of molecular noise on nanoscale electrochemical oscillators

Science.gov (United States)

Cosi, Filippo G.; Krischer, Katharina

2017-06-01

We study the loss of coherence of electrochemical oscillations on meso- and nanosized electrodes with numeric simulations of the electrochemical master equation for a prototypical electrochemical oscillator, the hydrogen peroxide reduction on Pt electrodes in the presence of halides. On nanoelectrodes, the electrode potential changes whenever a stochastic electron-transfer event takes place. Electrochemical reaction rate coefficients depend exponentially on the electrode potential and become thus fluctuating quantities as well. Therefore, also the transition rates between system states become time-dependent which constitutes a fundamental difference to purely chemical nanoscale oscillators. Three implications are demonstrated: (a) oscillations and steady states shift in phase space with decreasing system size, thereby also decreasing considerably the oscillating parameter regions; (b) the minimal number of molecules necessary to support correlated oscillations is more than 10 times as large as for nanoscale chemical oscillators; (c) the relation between correlation time and variance of the period of the oscillations predicted for chemical oscillators in the weak noise limit is only fulfilled in a very restricted parameter range for the electrochemical nano-oscillator.

Oscillating solitons in nonlinear optics

Indian Academy of Sciences (India)

... are derived, and the relevant properties and features of oscillating solitons are illustrated. Oscillating solitons are controlled by the reciprocal of the group velocity and Kerr nonlinearity. Results of this paper will be valuable to the study of dispersion-managed optical communication system and mode-locked fibre lasers.

Implementing a memristive Van der Pol oscillator coupled to a linear oscillator: synchronization and application to secure communication

International Nuclear Information System (INIS)

Megam Ngouonkadi, E B; Fotsin, H B; Louodop Fotso, P

2014-01-01

This paper investigates the dynamics of a memristor-based Van der Pol oscillator coupled to a linear circuit (VDPCL). This chaotic oscillator is a modification of the classical Van der Pol coupled to a linear circuit, and is obtained by replacing the classical cubic nonlinearity by the memristive one. The memristive VDPCL oscillator, in addition to having a very special stability property, exhibits interesting spectral characteristics, which makes it suitable for chaos-based secure communication applications. The memristor is realized by using off-the-shelf components. The basic properties of the circuit are analyzed by means of bifurcation analysis. Chaotic attractors from numerical and experimental analysis are presented, followed by a comparison of results obtained from the modified VDPCL oscillator and those from the classical VDPCL oscillator. An application to synchronization and chaos secure communication is also presented. (paper)

Climate change impacts on the duration and frequency of combined sewer overflows

Science.gov (United States)

Fortier, C.; Mailhot, A.

2012-12-01

Combined sewer overflows (CSO) occur when large rainwater inflow from heavy precipitation exceeds the capacity of urban combined sewage systems. Many American and European cities with old sewage systems see their water quality significantly deteriorate during such events. In the long term, changes in the rainfall regime due to climate change may lead to more severe and more frequent CSO episodes and thus compel cities to review their global water management. The overall objective of this study is to investigate how climate change will impact CSO frequency and duration. Data from rain gauges located nearby 30 overflow outfalls, in southern Quebec, Canada, were used to identify rain events leading to overflows, using CSO monitored data from May to October during the period 2007-2009. For each site, occurrence and duration of CSO events were recorded and linked to a rainfall event. Many rain events features can be used to predict CSO events, such as total depth, duration, average intensity and peak intensity. Results based on Pearson product-moment correlation coefficients and multiple regression analysis show that CSO occurrence is best predicted by total rainfall. A methodology is proposed to calculate the CSO probability of occurrence and duration for each site of interest using rainfall series as input data. Monte Carlo method is then used to estimate CSO frequency. To evaluate the climate change impact on CSO, these relationships are used with simulated data from the Canadian Regional Climate Model to compare the distribution of annual number of CSO events over the 1960-1990 period and the 2070-2100 period.

Oscillating thermionic conversion for high-density space power

International Nuclear Information System (INIS)

Jacobson, D.L.; Morris, J.F.

1988-01-01

The compactness, maneuverability, and productive weight utilization of space nuclear reactors benefit from the use of thermionic converters at high temperature. Nuclear-thermionic-conversion power requirements are discussed, and the role of oscillations in thermionic energy conversion (TEC) history is examined. Proposed TEC oscillations are addressed, and the results of recent studies of TEC oscillations are reviewed. The possible use of high-frequency TEC oscillations to amplify low-frequency ones is considered. The accomplishments of various programs studying the use of high-temperature thermionic oscillators are examined. 16 references

Anharmonic potential in the oscillator representation

International Nuclear Information System (INIS)

Dineykhan, M.; Efimov, G.V.

1994-01-01

In the non relativistic and relativized Schroedinger equation the Wick ordering method called the oscillator representation is proposed to calculate the energy spectrum for a wide class of potentials allowing the existence of a bound state. The oscillator representation method gives a unique regular way to describe and calculate the energy levels of ground as well as orbital and radial excitation states for a wide class of potentials. The results of the zeroth approximation oscillator representation are in good agreement with the exact values for the anharmonic potentials. The oscillator representation method was applied to the relativized Schroedinger equation too. The perturbation series converges fairly fast, i.e., the highest perturbation corrections over the interaction Hamiltonian are small enough. 29 refs.; 4 tabs. (author)

Waves and oscillations in nature an introduction

CERN Document Server

Narayanan, A Satya

2015-01-01

Waves and oscillations are found in large scales (galactic) and microscopic scales (neutrino) in nature. Their dynamics and behavior heavily depend on the type of medium through which they propagate.Waves and Oscillations in Nature: An Introduction clearly elucidates the dynamics and behavior of waves and oscillations in various mediums. It presents different types of waves and oscillations that can be observed and studied from macroscopic to microscopic scales. The book provides a thorough introduction for researchers and graduate students in assorted areas of physics, such as fluid dynamics,

Neutrino oscillation: status and outlooks

International Nuclear Information System (INIS)

Nedelec, P.

1994-01-01

Whether the neutrinos are massive or not is one of the most puzzling question of physics today. If they are massive, they can contribute significantly to the Dark Matter of the Universe. An other consequence of a non-zero mass of neutrinos is that they might oscillate from one flavor to another. This oscillation process is by now the only way to detect a neutrino with a mass in the few eV range. Several neutrino experiments are currently looking for such an oscillation, in different modes, using different techniques. An overview of the experimental situation for neutrino experiments at accelerators is given. (author). 9 refs., 5 figs., 5 tabs

Synchronous Oscillations in Microtubule Polymerization

Science.gov (United States)

Carlier, M. F.; Melki, R.; Pantaloni, D.; Hill, T. L.; Chen, Y.

1987-08-01

Under conditions where microtubule nucleation and growth are fast (i.e., high magnesium ion and tubulin concentrations and absence of glycerol), microtubule assembly in vitro exhibits an oscillatory regime preceding the establishment of steady state. The amplitude of the oscillations can represent >50% of the maximum turbidity change and oscillations persist for up to 20 periods of 80 s each. Oscillations are accompanied by extensive length redistribution of microtubules. Preliminary work suggests that the oscillatory kinetics can be simulated using a model in which many microtubules undergo synchronous transitions between growing and rapidly depolymerizing phases, complicated by the kinetically limiting rate of nucleotide exchange on free tubulin.

Again on neutrino oscillations

International Nuclear Information System (INIS)

Bilenky, S.M.; Pontecorvo, B.

1976-01-01

The general case is treated of a weak interaction theory in which a term violating lepton charges is present. In such a scheme the particles with definite masses are Majorana neutrinos (2N if in the weak interaction participate N four-component neutrinos). Neutrino oscillations are discussed and it is shown that the minimum average intensity at the earth of solar neutrinos is 1/2N of the intensity expected when oscillations are absent

Accelerator-based neutrino oscillation searches

International Nuclear Information System (INIS)

Whitehouse, D.; Rameika, G.

1993-01-01

This paper attempts to summarize the neutrino oscillation section of the Workshop on Future Directions in Particle and Nuclear Physics at Multi-GeV Hadron Beam Facilities. There were very lively discussions about the merits of the different oscillation channels, experiments, and facilities, but the authors believe a substantial consensus emerged

Sunspot Oscillations From The Chromosphere To The Corona

Science.gov (United States)

Brynildsen, N.; Maltby, P.; Fredvik, T.; Kjeldseth-Moe, O.

The behavior of the 3 minute sunspot oscillations is studied as a function of temper- ature through the transition region using observations with CDS/SOHO and TRACE. The oscillations occur above the umbra, with amplitudes increasing to a maximum near 200 000 K, then decreasing towards higher temperatures. Deviations from pure linear oscillations are present in several cases. Power spectra of the oscillations are remarkably similar in the chromosphere and through the transition region in contra- diction to the predictions of the sunspot filter theory. The 3 minute oscillations pene- trate to the low temperature end of the corona, where they are channeled into smaller areas coinciding with the endpoints of sunspot coronal loops. This differs from the transition zone where the oscillating region covers the umbra.

Chemical disinfection of combined sewer overflow waters using performic acid or peracetic acids.

Science.gov (United States)

Chhetri, Ravi Kumar; Thornberg, Dines; Berner, Jesper; Gramstad, Robin; Öjstedt, Ulrik; Sharma, Anitha Kumari; Andersen, Henrik Rasmus

2014-08-15

We investigated the possibility of applying performic acid (PFA) and peracetic acid (PAA) for disinfection of combined sewer overflow (CSO) in existing CSO management infrastructures. The disinfection power of PFA and PAA towards Escherichia coli (E. coli) and Enterococcus was studied in batch-scale and pre-field experiments. In the batch-scale experiment, 2.5 mg L(-1) PAA removed approximately 4 log unit of E. coli and Enterococcus from CSO with a 360 min contact time. The removal of E. coli and Enterococcus from CSO was always around or above 3 log units using 2-4 mg L(-1) PFA; with a 20 min contact time in both batch-scale and pre-field experiments. There was no toxicological effect measured by Vibrio fischeri when CSO was disinfected with PFA; a slight toxic effect was observed on CSO disinfected with PAA. When the design for PFA based disinfection was applied to CSO collected from an authentic event, the disinfection efficiencies were confirmed and degradation rates were slightly higher than predicted in simulated CSO. Copyright © 2014 Elsevier B.V. All rights reserved.

The gamma oscillation: master or slave?

Science.gov (United States)

Schroeder, Charles E; Lakatos, Peter

2009-06-01

The idea that gamma enhancement reflects a state of high neuronal excitability and synchrony, critical for active brain operations, sets gamma up as a "master" or executor process that determines whether an input is effectively integrated and an effective output is generated. However, gamma amplitude is often coupled to the phase of lower frequency delta or theta oscillations, which would make gamma a "slave" to lower frequency activity. Gamma enslavement is productive and typical during rhythmic mode brain operations; when a predictable rhythm is in play, low and mid-frequency oscillations can be entrained and their excitability fluctuations of put to work in sensory and motor functions. When there is no task relevant rhythm that the system can entrain to, low frequency oscillations become detrimental to processing. Then, a continuous (vigilance) mode of operation is implemented; the system's sensitivity is maximized by suppressing lower frequency oscillations and exploiting continuous gamma band oscillations. Each mode has costs and benefits, and the brain shifts dynamically between them in accord with task demands.

Single crystalline Er{sub 2}O{sub 3}:sapphire films as potentially high-gain amplifiers at telecommunication wavelength

Energy Technology Data Exchange (ETDEWEB)

Kuznetsov, A. S.; Sadofev, S.; Schäfer, P.; Kalusniak, S.; Henneberger, F., E-mail: fh@physik.hu-berlin.de [Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin (Germany)

2014-11-10

Single crystalline thin films of Er{sub 2}O{sub 3}, demonstrating efficient 1.5 μm luminescence of Er{sup 3+} at room temperature were grown on Al{sub 2}O{sub 3} substrate by molecular beam epitaxy. The absorption coefficient at 1.536 μm was found to reach 270 cm{sup −1} translating in a maximal possible gain of 1390 dBcm{sup −1}. In conjunction with the 10% higher refractive index as compared to Al{sub 2}O{sub 3}, this opens the possibility to use Er{sub 2}O{sub 3}:sapphire films as short-length waveguide amplifiers in telecommunication.