Numerical simulation of terahertz-wave propagation in photonic crystal waveguide based on sapphire shaped crystal

International Nuclear Information System (INIS)

Zaytsev, Kirill I; Katyba, Gleb M; Mukhina, Elena E; Kudrin, Konstantin G; Karasik, Valeriy E; Yurchenko, Stanislav O; Kurlov, Vladimir N; Shikunova, Irina A; Reshetov, Igor V

2016-01-01

Terahertz (THz) waveguiding in sapphire shaped single crystal has been studied using the numerical simulations. The numerical finite-difference analysis has been implemented to characterize the dispersion and loss in the photonic crystalline waveguide containing hollow cylindrical channels, which form the hexagonal lattice. Observed results demonstrate the ability to guide the THz-waves in multi-mode regime in wide frequency range with the minimal power extinction coefficient of 0.02 dB/cm at 1.45 THz. This shows the prospectives of the shaped crystals for highly-efficient THz waveguiding. (paper)

Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

International Nuclear Information System (INIS)

Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

2014-01-01

AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

Science.gov (United States)

Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

2018-03-01

Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

Science.gov (United States)

Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

2016-11-21

The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

Energy Technology Data Exchange (ETDEWEB)

Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

2012-06-30

The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

Facet Appearance on the Lateral Face of Sapphire Single-Crystal Fibers during LHPG Growth

Directory of Open Access Journals (Sweden)

Liudmila D. Iskhakova

2016-08-01

Full Text Available Results of the study of the lateral surface of single-crystal (SC sapphire fibers grown along crystallographic directions [ 0001 ] and [ 11 2 ¯ 0 ] by the LHPG method are presented. The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is investigated. The microstructure of the samples is investigated with the help of an optical microscope and a JSM-5910LV scanning electronic microscope (JEOL. The crystallographic orientations of the facets on the SC sapphire fiber surface are determined by electron backscatter diffraction (EBSD. The seed orientation is studied by means of XRD techniques.

High performance sapphire windows

Science.gov (United States)

Bates, Stephen C.; Liou, Larry

1993-02-01

High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

DEFF Research Database (Denmark)

Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

2005-01-01

In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

Measurement of AC electrical conductivity of single crystal Al2O3 during spallation-neutron irradiation

International Nuclear Information System (INIS)

Kennedy, J.C. III; Farnum, E.H.; Sommer, W.F.; Clinard, F.W. Jr.

1993-01-01

Samples of single crystal Al 2 O 3 , commonly known as sapphire, and polycrystalline Al 2 O 3 were irradiated with spallation neutrons at the Los Alamos Spallation Radiation Effects Facility (LASREF) under various temperature conditions and with a continuously applied alternating electric field. This paper describes the results of measurements on the sapphire samples. Neutron fluence and flux values are estimated values pending recovery and analysis of dosimetry packages. The conductivity increased approximately with the square root of the neutron flux at fluences less than 3 x 10 21 n/m 2 . The increase in conductivity reached saturated levels as high as 2 x 10 -2 (ohm-m) -1 at fluences as low as 2 x 10 22 n/m 2 . Frequency swept impedance measurements indicated a change in the electrical properties from capacitive to resistive behavior with increasing fluence

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

2017-01-01

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding

2017-08-08

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

CERN Document Server

Kiselev, A N; Skupov, V D; Filatov, D O

2001-01-01

The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

2004-09-01

The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Neutron irradiation of sapphire for compressive strengthening. II. Physical properties changes

Energy Technology Data Exchange (ETDEWEB)

Regan, Thomas M. E-mail: thomas_regan@uml.edu; Harris, Daniel C. E-mail: harrisdc@navair.navy.mil; Blodgett, David W.; Baldwin, Kevin C.; Miragliotta, Joseph A.; Thomas, Michael E.; Linevsky, Milton J.; Giles, John W.; Kennedy, Thomas A.; Fatemi, Mohammad; Black, David R.; Lagerloef, K. Peter D

2002-01-01

Irradiation of sapphire with fast neutrons (0.8-10 MeV) at a fluence of 10{sup 22}/m{sup 2} increased the c-axis compressive strength and the c-plane biaxial flexure strength at 600 deg. C by a factor of {approx}2.5. Both effects are attributed to inhibition of r-plane twin propagation by damage clusters resulting from neutron impact. The a-plane biaxial flexure strength and four-point flexure strength in the c- and m-directions decreased by 10-23% at 600 deg. C after neutron irradiation. Neutron irradiation had little or no effect on thermal conductivity, infrared absorption, elastic constants, hardness, and fracture toughness. A featureless electron paramagnetic resonance signal at g=2.02 was correlated with the strength increase: This signal grew in amplitude with increasing neutron irradiation, which also increased the compressive strength. Annealing conditions that reversed the strengthening also annihilated the g=2.02 signal. A signal associated with a paramagnetic center containing two Al nuclei was not correlated with strength. Ultraviolet and visible color centers also were not correlated with strength in that they could be removed by annealing at temperatures that were too low to reverse the compressive strengthening effect of neutron irradiation.

Response of Seven Crystallographic Orientations of Sapphire Crystals to Shock Stresses of 16 to 86 GPa

OpenAIRE

Kanel, G. I.; Nellis, W. J.; Savinykh, A. S.; Razorenov, S. V.; Rajendran, A. M.

2009-01-01

Shock-wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations were measured with time-resolved VISAR interferometry at shock stresses in the range 16 to 86 GPa. Shock propagation was normal to the surface of each cut. The angle between the c-axis of the hexagonal crystal structure and the direction of shock propagation varied from 0 for c-cut up to 90 degrees for m-cut in the basal plane. Based on published shock-induced transparencies, shock-induced optical ...

Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

International Nuclear Information System (INIS)

Vetrov, V. N.; Ignatenkov, B. A.

2013-01-01

The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

Detection of beryllium treatment of natural sapphires by NRA

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

2010-06-15

Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

International Nuclear Information System (INIS)

Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

1986-01-01

This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

Order in nanometer thick intergranular films at Au-sapphire interfaces

Energy Technology Data Exchange (ETDEWEB)

Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2011-08-15

Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mota-Santiago, Pablo-Ernesto [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Crespo-Sosa, Alejandro, E-mail: crespo@fisica.unam.mx [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Jimenez-Hernandez, Jose-Luis; Silva-Pereyra, Hector-Gabriel; Reyes-Esqueda, Jorge-Alejandro; Oliver, Alicia [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico)

2012-10-15

Highlights: Black-Right-Pointing-Pointer Systematic study on the formation of Ag and Au nano-particles in Al{sub 2}O{sub 3}. Black-Right-Pointing-Pointer Annealing in a reducing atmosphere, below the metal melting point is more suitable. Black-Right-Pointing-Pointer Au nano-particles grow up to 15 nm and Ag nano-particles up to 45 nm in radius. Black-Right-Pointing-Pointer Ostwald ripening is the mechanism responsible for the formation of large nanoparticles. Black-Right-Pointing-Pointer Optical properties of metallic nano-particles in Al{sub 2}O{sub 3} can be related to their size. - Abstract: Metallic nano-particles embedded in transparent dielectrics are very important for new technological applications because of their unique optical properties. These properties depend strongly on the size and shape of the nano-particles. In order to achieve the synthesis of metallic nano-particles it has been used the technique of ion implantation. This is a very common technique because it allows the control of the depth and concentration of the metallic ions inside the sample, limited mostly by straggling, without introducing other contaminant agents. The purpose of this work was to measure the size of the nano-particles grown under different conditions in Sapphire and its size evolution during the growth process. To achieve this goal, {alpha}-Al{sub 2}O{sub 3} single crystals were implanted with Ag or Au ions at room temperature with different fluences (from 2 Multiplication-Sign 10{sup 16} ions/cm{sup 2} to 8 Multiplication-Sign 10{sup 16} ions/cm{sup 2}). Afterwards, the samples were annealed at different temperatures (from 600 Degree-Sign C to 1100 Degree-Sign C) in oxidising, reducing, Ar or N{sub 2} atmospheres. We measured the ion depth profile by Rutherford Backscattering Spectroscopy (RBS) and the nano-crystals size distribution by using two methods, the surface plasmon resonance in the optical extinction spectrum and the Transmission Electron Microscopy (TEM).

Dosimetry for Crystals Irradiation

CERN Document Server

Lecomte, Pierre

2005-01-01

Before shipment to CMS, all PbWO4 crystals produced in China are irradiated there with 60 Co , in order to insure that the induced absorption coefficient is within specifications. Acceptance tests at CERNand at ENEA also include irradiation with gamma rays from 60 Co sources. There were initially discrepancies in quoted doses and doserates as well as in induced absorption coefficients. The present work resolves the discrepancies in irradiation measurements and defines common dosimetry methods for consistency checks between irradiation facilities.

Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

Science.gov (United States)

Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

2018-03-01

The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

Energy Technology Data Exchange (ETDEWEB)

Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

1996-02-11

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

International Nuclear Information System (INIS)

Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

1996-01-01

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

Directory of Open Access Journals (Sweden)

X. Wei

2012-01-01

Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

Science.gov (United States)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

Energy Technology Data Exchange (ETDEWEB)

Luca, M

2007-07-15

Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

Science.gov (United States)

Akazawa, Housei; Ueno, Yuko

2014-10-01

We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

A Century of Sapphire Crystal Growth

Science.gov (United States)

2004-05-17

should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

Sapphire: A kinking nonlinear elastic solid

Science.gov (United States)

Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

2006-03-01

Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

International Nuclear Information System (INIS)

Yi, Jong Hoon; Horn, Roland; Wendt, K.

2001-01-01

We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2012-01-01

. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

2014-01-01

The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

2014-07-15

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron-irradiation-induced crystallization of amorphous orthophosphates

International Nuclear Information System (INIS)

Meldrum, A.; Ewing, R.C.; Boatner, L.A.

1996-12-01

Amorphous LaPO 4 , EuPO 4 , GdPO 4 , ScPO 4 , and fluorapatite [Ca 5 (PO 4 ) 3 F] were irradiated by electron beam in a TEM. Irradiations were done at -150 to 300 C, 80 to 200 keV, and current densities from 0.3 to 16 A/cm 2 . In all cases, the materials crystallized to form a randomly oriented polycrystalline assemblage. Crystallization is driven dominantly by inelastic processes, although ballistic collisions with target nuclei can be important above 175 keV, particularly in apatite. Using a high current density, crystallization is so fast that continuous lines of crystallites can be ''drawn'' on the amorphous matrix

Epitactical FeAl films on sapphire and their magnetic properties

International Nuclear Information System (INIS)

Trautvetter, Moritz

2011-01-01

In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

Energy Technology Data Exchange (ETDEWEB)

Kristie Cooper; Gary Pickrell; Anbo Wang

2005-11-01

This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

Irradiation damage of alkali halide crystals during positron bombardment

International Nuclear Information System (INIS)

Arefiev, K.P.; Arefiev, V.P.; Vorobiev, S.A.

1978-01-01

The bleaching effect of positron irradiation of KCl and KBr single crystals previously coloured with electrons or protons was investigated. Positrons injection in the coloured alkali halide samples reduced the F-centres concentration considerably. For KCl crystals thicker than the positrons range the appearance of additional bands in the absorption spectra is noticeable. The experimental data show that the bleaching phenomenon should be observed merely throughout the positron exposure both for irradiated and non-irradiated regions of the sample. Irradiation effects, due to positron source, on the peak counting rate of (γ-γ) angular correlation in KCl crystals under applied magnetic field were also investigated. The growth of peak counting rate shows the increase of positronium-like states formation near defects of cation sublattice. (author)

Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

Science.gov (United States)

Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

2018-01-01

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

Emission from Crystals Irradiated with a Beam of Runaway Electrons

Science.gov (United States)

Buranchenko, A. G.; Tarasenko, V. F.; Beloplotov, D. V.; Baksht, E. Kh.

2018-01-01

An investigation of the spectral and amplitude-temporal characteristics of emission from different crystals, promising in terms of their application as detectors of runaway electrons, is performed. This emission is excited by subnanosecond electron beams generated in a gas diode. It is found out that at the electron energies of tens-hundreds of kiloelectronvolts, the main contribution into the emission from CsI, ZnS, type IIa artificial and natural diamonds, sapphire, CaF2, ZrO2, Ga2O3, CaCO3, CdS, and ZnSe crystals comes from the cathodoluminescence; the radiation pulse duration depends on the crystal used and sufficiently exceeds the Cherenkov radiation pulse duration. It is demonstrated that the latter radiation exhibits low intensity and can be detected in the short-wave region of the spectrum in the cases where a monochromator and a high-sensitivity photomultiplier tube (PMT) are used.

Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process

Science.gov (United States)

Nguyen, Tran Phu; Chuang, Hsiao-Tsun; Chen, Jyh-Chen; Hu, Chieh

2018-02-01

In this study, the effect of the power history on the shape of a sapphire crystal and the thermal stress during the Kyropoulos process are numerically investigated. The simulation results show that the thermal stress is strongly dependent on the power history. The thermal stress distributions in the crystal for all growth stages produced with different power histories are also studied. The results show that high von Mises stress regions are found close to the seed of the crystal, the highly curved crystal surface and the crystal-melt interface. The maximum thermal stress, which occurs at the crystal-melt interface, increases significantly in value as the crystal expands at the crown. After this, there is reduction in the maximum thermal stress as the crystal lengthens. There is a remarkable enhancement in the maximum von Mises stress when the crystal-melt interface is close to the bottom of the crucible. There are two obvious peaks in the maximum Von Mises stress, at the end of the crown stage and in the final stage, when cracking defects can form. To alleviate this problem, different power histories are considered in order to optimize the process to produce the lowest thermal stress in the crystal. The optimal power history is found to produce a significant reduction in the thermal stress in the crown stage.

Registration of interstitial anions in irradiated MgO crystals

International Nuclear Information System (INIS)

Surzhikov, A.P.; Pogrebnyak, A.D.

1985-01-01

Possibility of application of positron annihilation for detection in oxides of rare earth metals with interstitial component of Frenkel anion defects is revealed. Magnesium oxide monocrystals with Ca, Si, Fe, Al impurity contents of 0.1 wt.% were investigated. These crystals were irradiated by X-rays (45 kV, 20 μA) and protons (10 MeV). It is shown that heating of magnesium oxide crystals irradiated by protons up to 700 K completely anneals F + -centers. In this case the component disappears inth the pulse distributon at xi=5.0; the subsequent crystal irradiation with X-ray does not lead to its reduction

Dose Profiles in ECAL Crystals for Various Irradiation Conditions

CERN Document Server

Huhtinen, Mika

1998-01-01

Simulated dose profiles in various irradiation and beam test conditions are compared to the expected dose profiles in the ECAL crystals at LHC. Simple front or side irradiations with photons give too steep or too flat dose profiles, respectively. Thus, if dose maxima are fitted to agree, front irradiation underestimate the average dose whereas side irradiations tend to overestimate. Different profiles are difficult to compare reliably, but it seems likely that in both cases the discrepancy is about a factor of 2-3 but in different directions. For most purposes this is likely to be good enough, but should be taken into account in the interpretation of the test results. It is shown that using a customized lead mask between the source and the crystal can significantly improve the agreement between 60 Co side irradiations and the LHC predictions. A 400 MeV/c pion beam incident on a crystal matrix can also reproduce rather well the profiles expected in the barrel ECAL.

Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

Energy Technology Data Exchange (ETDEWEB)

Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States)

2017-12-15

The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

Re-crystallization of ITO films after carbon irradiation

Energy Technology Data Exchange (ETDEWEB)

Usman, Muhammad, E-mail: usmanm@ncp.edu.pk [Experimental Physics Laboratories, National Centre for Physics, Shahdara Valley Road, Quaid-i-Azam University, Islamabad (Pakistan); Khan, Shahid, E-mail: shahidkhan@zju.edu.cn [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Khan, Majid [Department of Physics, Quaid-i-Azam University, Islamabad (Pakistan); Abbas, Turab Ali [Experimental Physics Laboratories, National Centre for Physics, Shahdara Valley Road, Quaid-i-Azam University, Islamabad (Pakistan)

2017-01-15

Highlights: • Carbon irradiation on ITO destroys crystal structure until threshold ion fluence. • Carbon irradiation induced amorphization in ITO is recoverable at higher fluence. • Optical transmittance is reduced after carbon irradiation. • Electrical resistivity is increased after irradiation with carbon ions in ITO. • Bandgap is reduced with increasing fluence of carbon irradiation. - Abstract: 2.0 MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1 × 10{sup 13} to 1 × 10{sup 15} ions/cm{sup 2}. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1 × 10{sup 13} ions/cm{sup 2} fluence of carbon ions. Further increase in ion fluence to 1 × 10{sup 14} ions/cm{sup 2} re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.

Re-crystallization of ITO films after carbon irradiation

International Nuclear Information System (INIS)

Usman, Muhammad; Khan, Shahid; Khan, Majid; Abbas, Turab Ali

2017-01-01

Highlights: • Carbon irradiation on ITO destroys crystal structure until threshold ion fluence. • Carbon irradiation induced amorphization in ITO is recoverable at higher fluence. • Optical transmittance is reduced after carbon irradiation. • Electrical resistivity is increased after irradiation with carbon ions in ITO. • Bandgap is reduced with increasing fluence of carbon irradiation. - Abstract: 2.0 MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1 × 10"1"3 to 1 × 10"1"5 ions/cm"2. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1 × 10"1"3 ions/cm"2 fluence of carbon ions. Further increase in ion fluence to 1 × 10"1"4 ions/cm"2 re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.

Folding two dimensional crystals by swift heavy ion irradiation

International Nuclear Information System (INIS)

Ochedowski, Oliver; Bukowska, Hanna; Freire Soler, Victor M.; Brökers, Lara; Ban-d'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

2014-01-01

Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS 2 and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS 2 does not

Magnetoplastic effect in irradiated NaCl and LiF crystals

International Nuclear Information System (INIS)

Al'shitz, V.I.; Darinskaya, E.V.; Kazakova, O.L.

1997-01-01

The effect of low x-ray irradiation doses (≅10 2 rad) on the magnetoplastic effect - the detachment of dislocations from paramagnetic centers under the action of an external magnetic field B - in alkali-halide crystals has been investigated. The measurements were performed on LiF crystals and three types of NaCl crystals, differing in impurity content. The dependence of the mean free path l of the dislocations on the rotational frequency ν of a sample in a magnetic field was especially sensitive to low irradiation doses. In unirradiated crystals this dependence is a single-step dependence and is characterized by a critical frequency ν c ∝B 2 above which the magnetoplastic effect is not observed. The frequency ν c depends only on the type of paramagnetic centers, and not on their density. Even the lowest irradiation dose employed ( c2 , that is insensitive to the irradiation dose, and that corresponds to the appearance of magnetically sensitive stoppers of a new type under irradiation. The initial critical frequency ν c1 , as a rule, also varies with the dose, reflecting the change in state of the impurity complexes (Ca in NaCl and Mg in LiF). Specifically, it is shown for NaCl(Ca) crystals that as the irradiation dose increases, the frequency ν c1 increases, gradually approaching the value ν c2 , so that by the time the dose is ≅300 rad, the dependence l(ν) once again becomes a single-step dependence, dropping sharply only for ν≥ν c2 . It is shown that the addition of a small number of Ni atoms to a NaCl crystal makes the Ca complexes radiation resistant, and the critical frequency ν c1 corresponding to them initially equals ν c2 for crystals with no Ni. The recombination kinetics of radiation defects in the case in which the samples are irradiated under a tungsten lamp was investigated. A possible physical model of the observed dependences is discussed

Irradiation temperature dependence of production efficiency of lattice defects in some neutron-irradiated oxides

International Nuclear Information System (INIS)

Okada, Moritami; Atobe, Kozo; Nakagawa, Masuo

2004-01-01

Temperature dependence of production efficiency of irradiation-induced defects in neutron-irradiated oxides has been investigated. Some oxide single crystals, MgO, α-Al 2 O 3 (sapphire) and TiO 2 (rutile), were irradiated at several controlled temperatures, 10, 20, 50, 100, 150 and 200 K, using the low-temperature irradiation facility of Kyoto University Reactor (KUR-LTL), and at ambient temperature (∼370 K) in the same facility. Irradiation temperature dependence of production efficiency of a 1 μm band in TiO 2 differs greatly from that of anion vacancy (F-type centers) in MgO and α-Al 2 O 3 . Results for MgO and α-Al 2 O 3 show steep negative gradients from 10 to 370 K, whereas that for TiO 2 includes a valley between 40 and 60 K and a hump at about 130 K, and then disappear at about 200 K. In MgO and α-Al 2 O 3 , this behavior can be explained by the recombination of Frenkel pairs, which is activated at higher temperature. In TiO 2 , in addition to the recombination mechanism, a covalent bonding property is thought to be exerted strong influence, and it is suggested that a disappearance of the 1 μm band at above 200 K is due to the recombination process of Frenkel pairs which is caused by the irradiation-induced crystallization

Irradiation temperature dependence of production efficiency of lattice defects in some neutron-irradiated oxides

Energy Technology Data Exchange (ETDEWEB)

Okada, Moritami [Research Reactor Institute, Kyoto University, Kumatori-cho, Sennan-gun, Osaka 5900494 (Japan)]. E-mail: okada@rri.kyoto-u.ac.jp; Atobe, Kozo [Faculty of Science, Naruto University of Education, Naruto, Tokushima 7728502 (Japan); Nakagawa, Masuo [Faculty of Education, Kagawa University, Takamatsu, Kagawa 7608522 (Japan)

2004-11-01

Temperature dependence of production efficiency of irradiation-induced defects in neutron-irradiated oxides has been investigated. Some oxide single crystals, MgO, {alpha}-Al{sub 2}O{sub 3} (sapphire) and TiO{sub 2} (rutile), were irradiated at several controlled temperatures, 10, 20, 50, 100, 150 and 200 K, using the low-temperature irradiation facility of Kyoto University Reactor (KUR-LTL), and at ambient temperature ({approx}370 K) in the same facility. Irradiation temperature dependence of production efficiency of a 1 {mu}m band in TiO{sub 2} differs greatly from that of anion vacancy (F-type centers) in MgO and {alpha}-Al{sub 2}O{sub 3}. Results for MgO and {alpha}-Al{sub 2}O{sub 3} show steep negative gradients from 10 to 370 K, whereas that for TiO{sub 2} includes a valley between 40 and 60 K and a hump at about 130 K, and then disappear at about 200 K. In MgO and {alpha}-Al{sub 2}O{sub 3}, this behavior can be explained by the recombination of Frenkel pairs, which is activated at higher temperature. In TiO{sub 2}, in addition to the recombination mechanism, a covalent bonding property is thought to be exerted strong influence, and it is suggested that a disappearance of the 1 {mu}m band at above 200 K is due to the recombination process of Frenkel pairs which is caused by the irradiation-induced crystallization.

Characterisation of irradiation-induced defects in ZnO single crystals

International Nuclear Information System (INIS)

Prochazka, I; Cizek, J; Lukac, F; Melikhova, O; Valenta, J; Havranek, V; Anwand, W; Skuratov, V A; Strukova, T S

2016-01-01

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe 26+ ions to fluences ranged from 3×10 12 to 1×10 14 cm -2 . The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments. (paper)

Characterisation of irradiation-induced defects in ZnO single crystals

Science.gov (United States)

Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.

2016-01-01

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

Crystal plasticity modeling of irradiation growth in Zircaloy-2

Science.gov (United States)

Patra, Anirban; Tomé, Carlos N.; Golubov, Stanislav I.

2017-08-01

A physically based reaction-diffusion model is implemented in the visco-plastic self-consistent (VPSC) crystal plasticity framework to simulate irradiation growth in hcp Zr and its alloys. The reaction-diffusion model accounts for the defects produced by the cascade of displaced atoms, their diffusion to lattice sinks and the contribution to crystallographic strain at the level of single crystals. The VPSC framework accounts for intergranular interactions and irradiation creep, and calculates the strain in the polycrystalline ensemble. A novel scheme is proposed to model the simultaneous evolution of both, number density and radius, of irradiation-induced dislocation loops directly from experimental data of dislocation density evolution during irradiation. This framework is used to predict the irradiation growth behaviour of cold-worked Zircaloy-2 and trends compared to available experimental data. The role of internal stresses in inducing irradiation creep is discussed. Effects of grain size, texture and external stress on the coupled irradiation growth and creep behaviour are also studied and compared with available experimental data.

Folding two dimensional crystals by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Ochedowski, Oliver; Bukowska, Hanna [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Freire Soler, Victor M. [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Departament de Fisica Aplicada i Optica, Universitat de Barcelona, E08028 Barcelona (Spain); Brökers, Lara [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Ban-d' Etat, Brigitte; Lebius, Henning [CIMAP (CEA-CNRS-ENSICAEN-UCBN), 14070 Caen Cedex 5 (France); Schleberger, Marika, E-mail: marika.schleberger@uni-due.de [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany)

2014-12-01

Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS{sub 2} and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS{sub 2} does not.

Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

Science.gov (United States)

Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

2018-01-01

An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

Auto-oscillations of temperature and defect density in impure crystals under irradiation

International Nuclear Information System (INIS)

Selishchev, P.A.; Sugakov, V.I.

1990-01-01

Appearance of auto-oscillations in temperature and defect density of impurity crystals under irradiation is studied. It is shown that at certain critical parameters stationary distribution of temperature and defect density of the sample irradiated becomes unstable as regards the formation of temporal dissipative structures: auto-oscillations of temperature and defect density. Critical parameters are determined (the rate of defect formation, temperature of crystal environment, etc.) and the frequency of appearing auto-oscillations, its dependence on irradiation conditions and crystal properties are found

LASER PROCESSING ON SINGLE CRYSTALS BY UV PULSE LASER

OpenAIRE

龍見, 雅美; 佐々木, 徹; 高山, 恭宜

2009-01-01

Laser processing by using UV pulsed laser was carried out on single crystal such as sapphire and diamond in order to understand the fundamental laser processing on single crystal. The absorption edges of diamond and sapphire are longer and shorter than the wave length of UV laser, respectively. The processed regions by laser with near threshold power of processing show quite different state in each crystal.

Effects of the auto irradiation in KBr:Eu2+ crystals

International Nuclear Information System (INIS)

Perez S, R.; Aceves, R.

2002-01-01

In KCl :Eu 2+ crystals and in KBr :Eu 2+ crystals it has been detected the effect of the auto irradiation with 40 K isotope. In this work, a study of auto irradiation thermoluminescence in KBr :Eu 2+ crystals with different Eu 2+ concentrations and different thermal treatments is presented. The form of the Tl curve shows mainly a sparkle at 110 Centigrade degrees. The sparkle intensity increases linearly in a time interval around 3600 sec. After this time the increase of intensity was slower. In the linear interval, the lukewarm effects are almost scornful. The analysis of results is looked to the relation between the thermoluminescence and the Eu 2+ additions. It is discussed the form of the curve comparing it with the Tl induced by external irradiation sources on this type of materials. Also it is discussed the temporary dependence of the quantity of induced defects. Finally, the Tl intensity results for crystals with and without previous luke warms are compared. (Author)

Proton irradiation of liquid crystal based adaptive optical devices

International Nuclear Information System (INIS)

Buis, E.J.; Berkhout, G.C.G.; Love, G.D.; Kirby, A.K.; Taylor, J.M.; Hannemann, S.; Collon, M.J.

2012-01-01

To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10 10 p/cm 2 ). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

Proton irradiation of liquid crystal based adaptive optical devices

Energy Technology Data Exchange (ETDEWEB)

Buis, E.J., E-mail: ernst-jan.buis@tno.nl [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Berkhout, G.C.G. [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (Netherlands); Love, G.D.; Kirby, A.K.; Taylor, J.M. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Hannemann, S.; Collon, M.J. [cosine Research BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands)

2012-01-01

To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10{sup 10}p/cm{sup 2}). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

Hopping conduction in gamma-irradiated InSe and InSe:Sn single crystals

International Nuclear Information System (INIS)

MUSTAFAEVA, S.N.; ISMAILOV, A.A.; ASADOV, M.M.

2010-01-01

Full text : The semiconductive InSe layer compound is characterized by a strong covalent bond inside the layers and a weak Van der Waals bonding between them. It was shown that across the layers of InSe single crystals at low temperatures (T ≤ 200 K) at direct current (dc) hopping conduction through localized states near the Fermi level takes place. The results of dc-conductivity of gamma-irradiated p-InSe and n-InSe : Sn layer single crystals have been presented in this work. ρ-InSe single crystal specimens grown by the Bridgman method were used in the experiments. Plates of the crystals under study were obtained by cleaving along the layers of single crystal ingots. The single-crystal InSe samples for electric measurements had the form of planar capacitors normal to the C axis of the crystals, with silver-paste electrodes. The thickness of the InSe samples was 300 mkm. Co 60 serves as the source of irradiation with energy of gamma-quantum equal to 1.3 MeV. The electric properties of non-irradiated and gamma-irradiated InSe crystals were measured under the same conditions. It is revealed that InSe and InSe : Sn (0.2 and 0.4 mole percent Sn) single crystals exhibit a variable range hopping conduction along a normal to their natural layers at temperatures T≤200 K in a dc electric field. From experimental data the parameters of localized states of p-InSe and n-InSe : Sn were calculated before and after gamma-irradiation. It is revealed that gamma-irradiation of p-InSe and n-InSe : Sn (0.2 and 0.4 mole percent Sn) single crystals leads to significant change of localized states parameters. After gamma-irradiation the density of states near the Fermi level increased, but their energy spread and the average jump distance decreased. The concentrations of radiated defects were estimated in p-InSe (5.18*10 1 7 sm - 3) and n-InSe : Sn (2.5*10 1 7 - 2.7*10 1 8 sm - 3) single crystals. The present results demonstrate that gamma-irradiation offers the possibility of tuning

Development of Auto-Seeding System Using Image Processing Technology in the Sapphire Crystal Growth Process via the Kyropoulos Method

Directory of Open Access Journals (Sweden)

Churl Min Kim

2017-04-01

Full Text Available The Kyropoulos (Ky and Czochralski (Cz methods of crystal growth are used for large-diameter single crystals. The seeding process in these methods must induce initial crystallization by initiating contact between the seed crystals and the surface of the melted material. In the Ky and Cz methods, the seeding process lays the foundation for ingot growth during the entire growth process. When any defect occurs in this process, it is likely to spread to the entire ingot. In this paper, a vision system was constructed for auto seeding and for observing the surface of the melt in the Ky method. An algorithm was developed to detect the time when the internal convection of the melt is stabilized by observing the shape of the spoke pattern on the melt material surface. Then, the vision system and algorithm were applied to the growth furnace, and the possibility of process automation was examined for sapphire growth. To confirm that the convection of the melt was stabilized, the position of the island (i.e., the center of a spoke pattern was detected using the vision system and image processing. When the observed coordinates for the center of the island were compared with the coordinates detected from the image processing algorithm, there was an average error of 1.87 mm (based on an image with 1024 × 768 pixels.

The effect of deformation twinning on irradiation embrittlement in iron single crystals

International Nuclear Information System (INIS)

Kayano, Hideo; Tokutomi, Shoichiro; Yajima, Seishi; Takaku, Hiroshi.

1978-01-01

Single crystals of iron with the [100] crystal orientation were irradiated in JMTR with fast neutrons to a fluence of 8 x 10 18 n/cm 2 (E > 1 MeV). All samples were deformed in tension at temperatures from liquid nitrogen temperature to 200 0 C at different strain rates using an Instron-type tensile testing machine. Scanning electron microscopy of the fractured surfaces revealed that deformation twinning is difficult to occur in irradiated samples, and also that twins formed in both irradiated and unirradiated samples inhibit fracture nucleation and growth. From the results of tensile deformation of the irradiated samples deformed in tension a different strain rates at 159 0 K, it is conceived that twinning suppression is greater in the irradiated than in the unirradiated samples, and that the nucleation and growth of twins are not necessarily related to those of cracks. It is suggested that the irradiation-induced defects impede plastic deformation of the crystals and deformation twinning is suppressed by irradiation, thus causing the irradiation embrittlement. (auth.)

In situ crystallization of sputter-deposited TiNi by ion irradiation

International Nuclear Information System (INIS)

Ikenaga, Noriaki; Kishi, Yoichi; Yajima, Zenjiro; Sakudo, Noriyuki

2013-01-01

Highlights: ► We developed a sputtering deposition process equipped with an ion irradiation system. ► Ion irradiation enables crystallization at lower substrate temperature. ► Ion fluence has an effective range for low-temperature crystallization. ► Crystallized films made on polyimide by the process show the shape memory effect. -- Abstract: TiNi is well known as a typical shape-memory alloy, and the shape-memory property appears only when the structure is crystalline. Until recently, the material has been formed as amorphous film by single-target sputtering deposition at first and then crystallized by being annealed at high temperature over 500 °C. Therefore, it has been difficult to make crystalline TiNi film directly on a substrate of polymer-based material because of the low heat resistance of substrate. In order to realize an actuator from the crystallized TiNi film on polymer substrates, the substrate temperature should be kept below 200 °C throughout the whole process. In our previous studies we have found that deposited film can be crystallized at very low temperature without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. And we have also demonstrated the shape-memory effect with the TiNi film made by the new process. In order to investigate what parameters of the process contribute to the low-temperature crystallization, we have focused to the ion fluence of the ion irradiation. Resultantly, it was found that the transition from amorphous structure to crystal one has a threshold range of ion fluence

Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

Science.gov (United States)

Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

2018-02-01

(11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

Science.gov (United States)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

Science.gov (United States)

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Positron annihilation spectroscopy of vacancy aggregates in neutron-irradiated MgO crystals

International Nuclear Information System (INIS)

Pareja, R.; De La Cruz, R.M.; Gonzalez, R.; Chen, Y.; Department of Energy, Washington, DC

1992-01-01

Positron annihilation measurements in neutron-irradiated MgO crystals show that the positron lifetime is shorter than in as-grown crystals, suggesting that most of the defects produced by neutron irradiations are positively charged. The concentration of the neutral anion vacancy (possibly also the neutral anion divacancy) is estimated to be no more than ∼ 10 16 cm -3 for samples irradiated to a dose of 10 17 to 10 19 n cm -2 . Annealing experiments on the neutron-irradiated crystals show a significant increase in the positron lifetime after anneals at 900 K. The increase is attributed to positron trapping by anion-vacancy aggregates. A lifetime of (284±15)ps is tentatively assigned to positrons trapped in these aggregates. (Author)

Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

Energy Technology Data Exchange (ETDEWEB)

Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

2015-07-01

Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

Systematic Study of the PbWO4 Crystal Short Term Instalibity Under Irradiation

CERN Document Server

Annenkov, Alexander; Chipaux, Rémi; Drobychev, Gleb; Fedorov, Andrey; Géléoc, Marie; Golubev, Nikolai; Korzhik, Mikhail; Lecoq, Paul; Ligun, A B; Missevitch, Oleg; Pavlenko, V B; Peigneux, Jean-Pierre; Singovsky, Alexander

1997-01-01

The effect of the irradiation on the lead tungstate ( PWO) scintillator properties has been studied at different irradiation facilities. Lead tungstate crystals grown with the tuning of oxides content in the melt to the stoichiometry of pure sheelite or sheelite-like type crystals and doped with heterovalent, trivalent and pentavalent impurities have been studied in order to optimize their resistance to irradiation. A combination of a selective cleaning of raw materials, a tuning of the melt from crystallization to crystallisation, and a destruction or compensation of the point structure defects has been used to minimize the short-term instability of PWO parameters under irradiation.

Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

Science.gov (United States)

Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

2010-03-20

We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

Synthesis of titanium sapphire by ion implantation

International Nuclear Information System (INIS)

Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

1998-01-01

Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

Contribution to the microwave characterisation of superconductive materials by means of sapphire resonators

International Nuclear Information System (INIS)

Hanus, Xavier

1993-01-01

The objective of this research thesis is to find a compact resonant structure which would allow the residual surface impedance of superconductive samples to be simply, quickly and economically characterised. The author first explains why he decided to use a sapphire single-crystal as inner dielectric, given some performance reached by resonant structures equipped with such inner dielectrics, and given constraints adopted from the start. He explains the origin of microwave losses which appear in this type of resonant structure, i.e. respectively the surface impedance as far as metallic losses are concerned, and the sapphire dielectric loss angle for as far as dielectric losses are concerned. The experimental installation and the principle of microwave measurements are described. The performance of different possible solutions of resonant structures from starting criteria is presented. The solution of the cavity-sapphire with a TE 011 resonant mode is derived [fr

Optical and electrical phenomena in dielectric materials under irradiation

CERN Document Server

Plaksin, O A; Stepanov, P A; Demenkov, P V; Chernov, V M; Krutskikh, A O

2002-01-01

Optical and acoustic properties of the materials based on Al sub 2 O sub 3 , SiO sub 2 and BN under 8 MeV proton irradiation (<10 sup 4 Gy/s) have been measured. Electric charge partitioning has been shown to result in charging the microscopic regions in the bulk of the dielectrics under irradiation, which is due to different mobility of free electrons and holes (sapphire), concentration inhomogeneity in the system of charge carrier traps (alumina), or thermodynamic instability of the homogeneous distribution of the filled traps (silica glasses). Prevalent charge carrier recombination in the grain boundaries causes re-crystallization of pyrolytic boron nitride under irradiation, which shows up as simultaneous decrease of the intensity of radiation-induced luminescence (RIL) of the centres in the grain boundaries and the BN. The local charging results in optical inhomogeneity of the silica glasses which is sustained by the optical loss spectra of the irradiated glasses, features of kinetics of bleaching, RI...

Investigations on the optical, thermal and surface modifications of electron irradiated L-threonine single crystals

Energy Technology Data Exchange (ETDEWEB)

Ramesh Kumar, G.; Gokul Raj, S. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India); Bogle, K.A.; Dhole, S.D.; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Mohan, R. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India)], E-mail: professormohan@yahoo.co.in

2008-06-15

L-Threonine single crystals have been irradiated by 6 MeV electrons. Irradiated crystals at various electron fluences were subjected to various techniques such as UV-vis-NIR, atomic force microscopy (AFM) and thermomechanical analyses. Thermal strength of the irradiated crystals has also been studied through differential scanning calorimetry (DSC) measurements. The results have been discussed in detail.

Radiation defects in electron-irradiated InP crystals

International Nuclear Information System (INIS)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

1982-01-01

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

Radiation defects in electron-irradiated InP crystals

Energy Technology Data Exchange (ETDEWEB)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

1982-06-16

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

Irradiation creep in zirconium single crystals

International Nuclear Information System (INIS)

MacEwen, S.R.; Fidleris, V.

1976-07-01

Two identical single crystals of crystal bar zirconium have been creep tested in reactor. Both specimens were preirradiated at low stress to a dose of about 4 x 10 23 n/m 2 (E > 1 MeV), and were then loaded to 25 MPa. The first specimen was loaded with reactor at full power, the second during a shutdown. The loading strain for both crystals was more than an order of magnitude smaller than that observed when an identical unirradiated crystal was loaded to the same stress. Both crystals exhibited periods of primary creep, after which their creep rates reached nearly constant values when the reactor was at power. During shutdowns the creep rates decreased rapidly with time. Electron microscopy revealed that the irradiation damage consisted of prismatic dislocation loops, approximately 13.5 nm in diameter. Cleared channels, identified as lying on (1010) planes, were also observed. The results are discussed in terms of the current theories for flux enhanced creep in the light of the microstructures observed. (author)

Developments of a bonding technique for optical materials by a surface activation method

International Nuclear Information System (INIS)

Sugiyama, Akira; Oda, Tomohiro; Abe, Tomoyuki; Kusunoki, Isao

2007-01-01

We have been developing a pair of sample holder used for optics in the surface activation bonding equipment. The holder can adjust the relative position of samples in the order of sub mm. To study the degree of dislocation appearing crystal surface activated by a fast atomic beam, irradiated sapphire crystals were examined by RBS, XPS, and AFM analysis. The heat treatment recovered the surface roughness of irradiated sapphire when the heating temperature reached at 1573 K. (author)

Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

International Nuclear Information System (INIS)

Liszkay, L.; Gordo, P.M.; Lima, A. de; Havancsak, K.; Skuratov, V.A.; Kajcsos, Z.

2004-01-01

Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al 2 O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5 x 10 10 ions cm -2 fluence, indicating the creation of monovacancies in high concentration. At 1 x 10 14 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods. (orig.)

An injection modelocked Ti-sapphire laser for synchronous photoinjection

International Nuclear Information System (INIS)

Hovater, C.; Poelker, M.

1997-01-01

The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

Energy Technology Data Exchange (ETDEWEB)

Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

1991-06-29

Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

Protons in neutron-irradiated and thermochemically reduced MgO crystals doped with lithium impurities

International Nuclear Information System (INIS)

Gonzalez, R.; Pareja, R.; Chen, Y.

1992-01-01

H - (hydride) ions have been observed in lithium-doped MgO crystals which have been neutron irradiated or thermochemically reduced (TCR). Infrared-absorption measurements have been used to identify the local modes of the H - ions in these crystals. The concentration of the H - ions in the neutron-irradiated crystals is found to be far less than that found in the TCR crystals. The thermal stability of H - and oxygen vacancies in both oxidizing and reducing atmospheres are investigated. The emergence of sharp structures due to OH - ions is attributed to the displacements of substitutional Li + ions, leaving behind unperturbed OH - ions, via a mechanism of rapid radiation-induced diffusion during irradiation in a reactor. Results of neutron-irradiated MgO:Li, which had previously been oxidized at high temperature, are also presented

Digested livestock wastewater treatment using gamma-ray irradiation and struvite crystallization

International Nuclear Information System (INIS)

Kim, Tak Hyun; Lee, Sang Ryul; Nam, Youn Ku; Lee, Myun Joo

2009-01-01

Livestock wastewater generally contains high strength of organics (COD), ammonia nitrogen (NH 4 + -N), phosphate phosphorus (PO 4 3- -P) and suspended solids. It is very difficult to treat by conventional wastewater treatment techniques. In this study, struvite crystallization was carried out to treat the digested livestock wastewater. 1.0 :1.2 :1.2 was determined as an optimal NH 4 + :Mg 2+ : PO 4 3- mol ratio of struvite crystallization. For the digested livestock wastewater, COD, NH 4 + -N and PO 4 3- -P removal efficiencies by struvite crystallization were 72.4%, 98.9%, and 74.8%, respectively. Gamma-ray irradiation was carried out prior to struvite crystallization of livestock wastewater. The enhancement of struvite crystallization efficiency could be obtained by the pretreatment of gamma-ray irradiation due to the decrease of COD, NH 4 + -N and PO 4 3- -P concentration

Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

Energy Technology Data Exchange (ETDEWEB)

Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

2012-09-15

Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

Inhomogeneous strain induced by fast neutron irradiation in NaKSO4 crystals

International Nuclear Information System (INIS)

Kandil, S.H.; El Gamal, M.A.; El Khatib, A.; El Wahidy, E.F.

1987-06-01

The effect of fast neutron irradiation on the thermal properties of NaKSO 4 crystals was studied around the phase transition temperature T c =453 K. The thermal expansion coefficient as well as the phase transition temperature were found to be dependent upon the irradiation dose. The specific heat, C p , showed multiple peaks in the phase transition temperature region. An explanation of this behaviour was based on the induced inhomogeneous strain in the crystal casued by the neutron irradiation process. (author). 10 refs, 3 figs

Single Crystal Filters for Neutron Spectrometry

International Nuclear Information System (INIS)

Habib, N.

2008-01-01

A study of neutron transmission properties trough a large single crystals specimens of Si, Ge, Pb, Bi and sapphire at 300 K and 80 K have been made for a wide range of neutron energies. The effectiveness of such filters is given by the ratio of the total cross-section of unwanted epithermal neutrons to that the desired thermal neutron beam and by the optimum choice of the crystal orientation, its mosaic spread, thickness and temperature.Our study indicates that sapphire is significantly more effective than the others for a wide range of neutron energies

Growth and characterization of β-Ga2O3 crystals

Science.gov (United States)

Nikolaev, V. I.; Maslov, V.; Stepanov, S. I.; Pechnikov, A. I.; Krymov, V.; Nikitina, I. P.; Guzilova, L. I.; Bougrov, V. E.; Romanov, A. E.

2017-01-01

Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of 46″. Young's modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.

Environmental studies on X- and γ-irradiated LiCsSO4 crystals

International Nuclear Information System (INIS)

Kassem, M.E.

2003-01-01

Thermoluminescence (TL) characteristics of LiCsSO 4 crystal have been studied after exposure to different doses of X and γ radiations. The glow curves showed TL response of three peaks at 75 deg. C, 125 deg. C and 250 deg. C. The structure of the glow peaks due to X-rays is quite different from that due to γ-rays. UV exposure yields a regeneration of the TL peaks for the post-irradiated samples with X- or γ-radiation with some changes in the peak structure especially the third peak. For the post-X-ray irradiated crystals, the area under the third glow peak (PK III) increased linearly with the integrated time of UV exposure till about 30 min after which no changes were observed; while, for the post-γ-irradiated crystals, two linear regions were observed. The models of the TL response for the post-irradiated samples as a result of exposure to UV are discussed

Chlorination of irradiated polyethylene single crystals

International Nuclear Information System (INIS)

Grimm, H.J.

1978-01-01

The chlorination of electron beam-irradiation polyethylene (PE) single crystals was studied for a range of irradiation doses, temperatures, and chlorine interaction times. The results presented show that PE chlorination was quite extensive, even in unirradiated PE single crystals at 25 0 C in the dark. Electron Spin Resonance (ESR, EPR) was used in this study in order to determine the alkyl radical concentration, decay constant, and diffusivity for (unchlorinated) specimens. An alkyl radical diffusivity D/sub a/ = 1.6 x 10 -17 cm 2 /sec at 25 0 C was estimated from ESR data and alkyl radical migration as one-dimensional unsteady-state diffusion process. In irradiated PE, chlorination occurred mainly via chain reactions which were initiated by the irradiation-produced free radicals. Chlorine content values were determined by X-ray Energy Spectroscopy (XES). It was found that the magnitude of the chlorine uptake increased with increasing dose, and decreased with decreasing temperature at constant dose. Otherwise the observed PE chlorination phenomena was quite similar for all of the doses and temperatures studied here, consisting of a two step mechanism: a fast uptake which occurred between time tCl 2 = 0 - 5 minutes and a slower, approximately first-order rate of uptake which occurred between times tCl 2 = 5 - 120 minutes. Chlorination was essentially complete by time tCl 2 = 120 minutes. The rapid uptake probably occurred in the amorphous surface zones where Cl 2 is relatively high and the second, slower step was probably attributable to Cl 2 diffusion into the crystalline regions and subsequent chlorination there. Inasmuch as the PE density decreases with increasing dose (for 1-600 Mrad), Cl 2 diffusivity was enhanced, resulting in higher chlorine uptake values at higher doses

Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

Science.gov (United States)

Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

2017-05-01

Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

Femtosecond pulse laser-induced self-organized nanostructures on the surface of ZnO crystal

International Nuclear Information System (INIS)

Zhong Minjian; Guo Guanglei; Yang Junyi; Ma Ninghua; Ye Guo; Ma Hongliang; Guo Xiaodong; Li Ruxin

2008-01-01

This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz. For a linearly polarized femtosecond laser, the periodic nanograting structure on the ablation crater surface was promoted. The period of self-organization structures is about 180 nm. The grating orientation is adjusted by the laser polarization direction. A long range Bragg-like grating is formed by moving the sample at a speed of 10 μm/s. For a circularly polarized laser beam, uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal

Co-doped sodium chloride crystals exposed to different irradiation temperature

Energy Technology Data Exchange (ETDEWEB)

Ortiz-Morales, A. [Unidad Profesional Interdisciplinaria de Ingenieria y Tecnologias Avanzadas, IPN, Av. Instituto Politecnico Nacional 2580, Col. La Laguna Ticoman, 07340 Mexico D.F., Mexico and Unidad de Irradiacion y Segurid (Mexico); Cruz-Zaragoza, E.; Furetta, C. [Unidad de Irradiacion y Seguridad Radiologica, Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, A.P. 70-543, 04510 Mexico D.F (Mexico); Kitis, G. [Nuclear Physics Laboratory, Aristotle University of Thessaloniki, Thessaloniki 54124 (Greece); Flores J, C.; Hernandez A, J.; Murrieta S, H. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, AP. 20-364, 01000 Mexico D.F (Mexico)

2013-07-03

Monocrystals of NaCl:XCl{sub 2}:MnCl{sub 2}(X = Ca,Cd) at four different concentrations have been analyzed. The crystals were exposed to different irradiation temperature, such as at room temperature (RT), solid water (SW), dry ice (DI) and liquid nitrogen (LN). The samples were irradiated with photon from {sup 60}Co irradiators. The co-doped sodium chloride crystals show a complex structure of glow curves that can be related to different distribution of traps. The linearity response was analyzed with the F(D) index. The F(D) value was less than unity indicating a sub-linear response was obtained from the TL response on the function of the dose. The glow curves were deconvoluted by using the CGCD program based on the first, second and general order kinetics.

Ion irradiation enhanced crystal nucleation in amorphous Si thin films

International Nuclear Information System (INIS)

Im, J.S.; Atwater, H.A.

1990-01-01

The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe + irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500--580 degree C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV

Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Energy Technology Data Exchange (ETDEWEB)

Heya, Akira, E-mail: heya@eng.u-hyogo.ac.jp [Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671–2280 (Japan); Kanda, Kazuhiro [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Toko, Kaoru; Sadoh, Taizoh [Department of Electronics, Kyushu University, 744 Nishi-ku, Motooka, Fukuoka 819–0395 (Japan); Amano, Sho [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Matsuo, Naoto [Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671–2280 (Japan); Miyamoto, Shuji [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Miyao, Masanobu [Department of Electronics, Kyushu University, 744 Nishi-ku, Motooka, Fukuoka 819–0395 (Japan); Mochizuki, Takayasu [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan)

2013-05-01

The low-temperature-crystallization effects of soft X-ray irradiation on the structural properties of amorphous Si and amorphous Ge films were investigated. From the differences in crystallization between Si and Ge, it was found that the effects of soft X-ray irradiation on the crystallization strongly depended on the energy band gap and energy level. The crystallization temperatures of the amorphous Si and amorphous Ge films decreased from 953 K to 853 K and 773 K to 663 K, respectively. The decrease in crystallization temperature was also related to atoms transitioning into a quasi-nucleic phase in the films. The ratio of electron excitation and migration effects to thermal effects was controlled using the storage-ring current (photon flux density). Therefore, we believe that low-temperature crystallization can be realized by controlling atomic migration through electron excitation. - Highlights: • This work investigates the crystallization mechanism for soft X-ray irradiation. • The soft X-ray crystallization depended on the energy band gap and energy level. • The decrease in the crystallization temperature for Si and Ge films was 100 K. • This decrement was related to atoms transitioning into a quasi-nucleic phase.

Irradiation hardening and localized deformation of neutron-irradiated α-iron single crystals

International Nuclear Information System (INIS)

Mughrabi, H.; Stroehle, D.; Wilkens, M.

1981-01-01

The early yielding behaviour of neutron-irradiated α iron single crystals orientated for single slip was investigated as a function of neutron dose. In the range of neutron doses between approx. equal to 10 18 and approx. equal to 10 19 n/cm 2 , the irradiation hardening increment was found to be almost constant. Qualitative modifications of this behaviour were observed in the case of predeformed specimens. The localized deformation of the neutron-irradiated specimens by dislocation channelling was investigated by slip-line observations, transmission electron microscopy and X-ray topography. A model of localized deformation is proposed in order to explain the development of the observed asymmetric dislocation double layers which bound the channels and transmit characteristic misorientations. (orig.)

Color centers in heavily irradiated CsI(Tl) crystals

International Nuclear Information System (INIS)

Yakovlev, V.; Meleshko, A.; Trefilova, L.

2008-01-01

The absorption and luminescence properties of CsI(Tl) crystals colored by irradiation are studied by the method of the time-resolved spectroscopy. The scheme of the electron transitions in CsI(Tl) crystal is suggested to explain the appearance of the color centers under exposure to the near-UV light. It is established that either of the two types activator color centers holds the charge carrier with opposite sign. The model of the hole Tl 2+ v c - activator color center is suggested. According to the model the positive charge of Tl 2+ ion is compensated by the negative charge of a close cation vacancy v c - . The color center emission reveals in the cathode-luminescence spectrum of the colored CsI(Tl) crystal. The high-dose irradiation of CsI(Tl) crystal results in the reduction of the decay time of the near-thallium self-trapped excitons (STE) emission. The decay kinetics of Tl 2+ v c - emission contains the time components typical for the decay kinetics of near-thallium STE emission. The reason of the observed effects is the energy transfer from the near-thallium STE excitons to the color centers via the inductive-resonant mechanism

Isothermal Crystallization Kinetics of HDPE/HA Compounds Irradiated with Sterilization Doses of Gamma Rays

International Nuclear Information System (INIS)

Albano, C.

2006-01-01

The objective of this work was to study the isothermal crystallization of High Density Polyethylene/Hydroxyapatite nanocomposites, with 2 and 5 ppc of HA, irradiated with 25 kGy (sterilization dose) of γ-Ray from a 60 C o source, at a rate of 4.8 kGy/h in air and at room temperature. The selected crystallization temperatures were 118, 117, 116 and 115 degree. The crystallization kinetics was analyzed using the Avrami's model whose parameters were optimized using a non-linear regression technique. Regression results show that the Avrami exponent varies between 1.8 and 1.5, meaning that the spherulitic growth is mainly two dimensional. Values for specific crystallization constant 'k' were found to be higher for HDPE/HA compounds than for pure HDPE, clearly indicating the presence of an HA nucleation effect. It was also observed that values for the specific crystallization constant 'k' decreases with increasing temperatures, being this effect more noticeable for HDPE/HA compounds than for pure HDPE. Regarding to irradiated samples, their 'k' values were found to be lower than those for non irradiated samples, the difference getting more significant with decreasing crystallization temperature. Simulation of experimental data with the Avrami's model show a clear influence of the crystallization temperature, the HA content in the sample and the amount of applied radiation. It was also observed that the Avrami model correlates satisfactorily experimental data for not irradiated samples of pure HDPE and HDPE/HA compounds at the highest crystallization (T c ). However, as the crystallization temperature decreases, the values simulated with the Avrami model increasingly deviate from experimental data, specifically at the highest values of the relative crystallinity. This effect is even stronger on irradiated samples of HDPE and HDPE/HA compounds

Angular and magnetic field dependences of critical current in irradiated YBaCuO single crystals

International Nuclear Information System (INIS)

Petrusenko, Yu.

2010-01-01

The investigation of mechanisms responsible for the current-carrying capability of irradiated high-temperature superconductors (HTSC) was realized. For the purpose, experiments were made to investigate the effect of point defects generated by high-energy electron irradiation on the critical temperature and the critical current in high-Tc superconducting single crystals YBa 2 Cu 3 O 7-x . The transport current density measured in HTSC single crystals YBa 2 Cu 3 O 7-x by the dc-method was found to exceed 80000 A/cm 2 . The experiments have demonstrated a more than 30-fold increase in the critical current density in single crystals irradiated with 2.5 MeV electrons to a dose of 3·10 18 el/cm 2 . Detailed studies were made into the anisotropy of critical current and the dependence of critical current on the external magnetic field strength in irradiated single crystals. A high efficiency of point defects as centers of magnetic vortex pinning in HTSC single crystals was first demonstrated.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Science.gov (United States)

To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Energy Technology Data Exchange (ETDEWEB)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C [Department of Physics, University of Hong Kong (Hong Kong); Gong, M, E-mail: sfung@hkucc.hku.h, E-mail: edwardto04@yahoo.com.h [Department of Physics, Sichuan University, Chengdu (China)

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10{sup 17}cm{sup -2}. Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

International Nuclear Information System (INIS)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C; Gong, M

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10 17 cm -2 . Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Irradiation and heating effects in topaz crystals from Minas Cerais, Brazil

International Nuclear Information System (INIS)

Albuquerque, A.R.P.L.; Isotani, S.

1988-01-01

The origin of the blue color induced by gamma irradiation in topaz crystals from the region around Governador Valadares, Minas Gerais, was examined through chemical analyses and heat treatments before irradiation. No correlation between impurities and the induced blue color was found. Heat treatments above 300 0 C before irradiation inhibit the formation of color. The conclusion is drawn that irradiation induced color is probably due to the presence of lattice defects. (author)

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

International Nuclear Information System (INIS)

Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

2014-01-01

One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

Ferromagnetism in proton irradiated 4H-SiC single crystal

Directory of Open Access Journals (Sweden)

Ren-Wei Zhou

2015-04-01

Full Text Available Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

Environmental studies on X- and {gamma}-irradiated LiCsSO{sub 4} crystals

Energy Technology Data Exchange (ETDEWEB)

Kassem, M.E

2003-09-01

Thermoluminescence (TL) characteristics of LiCsSO{sub 4} crystal have been studied after exposure to different doses of X and {gamma} radiations. The glow curves showed TL response of three peaks at 75 deg. C, 125 deg. C and 250 deg. C. The structure of the glow peaks due to X-rays is quite different from that due to {gamma}-rays. UV exposure yields a regeneration of the TL peaks for the post-irradiated samples with X- or {gamma}-radiation with some changes in the peak structure especially the third peak. For the post-X-ray irradiated crystals, the area under the third glow peak (PK III) increased linearly with the integrated time of UV exposure till about 30 min after which no changes were observed; while, for the post-{gamma}-irradiated crystals, two linear regions were observed. The models of the TL response for the post-irradiated samples as a result of exposure to UV are discussed.

Helium release from neutron-irradiated Li{sub 2}O single crystals

Energy Technology Data Exchange (ETDEWEB)

Yamaki, Daiju; Tanifuji, Takaaki; Noda, Kenji [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1998-03-01

Helium release behavior in post-irradiation heating tests was investigated for Li{sub 2}O single crystals which had been irradiated with thermal neutrons in JRR-4 and JRR-2, and fast neutrons in FFTF. It is clarified that the helium release curves from JRR-4 and JRR-2 specimens consists of only one broad peak. From the dependence of the peak temperatures on the neutron fluence and the crystal diameter, and the comparison with the results obtained for sintered pellets, it is considered that the helium generated in the specimen is released through the process of bulk diffusion with trapping by irradiation defects such as some defect clusters. For the helium release from FFTF specimens, two broad peaks were observed in the release curves. It is considered to suggest that two different diffusion paths exist for helium migration in the specimen, that is, bulk diffusion and diffusion through the micro-crack due to the heavy irradiation. In addition, helium bubble formation after irradiation due to the high temperature over 800K is suggested. (J.P.N.)

Modification of mechanical properties of Si crystal irradiated by Kr-beam

International Nuclear Information System (INIS)

Guo, Xiaowei; Momota, Sadao; Nitta, Noriko; Yamaguchi, Takaharu; Sato, Noriyuki; Tokaji, Hideto

2015-01-01

Graphical abstract: - Highlights: • Modification of mechanical properties of silicon crystal irradiated by Kr-beam was observed by means of continuous measurements of nano-indentation technique. • Modified mechanical properties show fluence-dependence. • Young's modulus is more sensitive to crystal to amorphous phase transition while hardness is more sensitive to damage induced by ion beam irradiation. • The depth profile of modified mechanical properties have a potential application of determining the longitudinal size of phase transition region induced by nanoindentation. - Abstract: The application of ion-beam irradiation in fabrication of structures with micro-/nanometer scale has achieved striking improvement. However, an inevitable damage results in the change of mechanical properties in irradiated materials. To investigate the relation between mechanical properties and ion-irradiation damages, nanoindentation was performed on crystalline silicon irradiated by Kr-beam with an energy of 240 keV. Modified Young's modulus and nanohardness, provided from the indentation, indicated fluence dependence. Stopping and range of ions in matter (SRIM) calculation, transmission electron microscopy (TEM) observation, and Rutherford backscattering-channeling (RBS-C) measurement were utilized to understand the irradiation effect on mechanical properties. In addition, the longitudinal size of the phase transition region induced by indentation was firstly evaluated based on the depth profile of modified nanohardness

Electron irradiation effect on single crystal of niobium

International Nuclear Information System (INIS)

Otero, M.P.; Lucki, G.

1984-01-01

The effect of electron irradiation (900 KeV) on gliding dislocations of single crystal Nb with its tensile axe in the [941] orientation was observed for the in-situ deformation in a high voltage electron microscope (HVEM) at Argonne National Laboratory. The experimental was carried out by the 1 hour-electron irradiation with no stress applied. Straight dislocations actuating as sinks for the electron produced defects became helicoidal as the irradiation proceeded. Frenkel pairs were created in Nb for electron energies > = 650 KeV and, as the single vacancies do not undergo long-range migration in Nb at temperatures much below 620 K, the defects that are entrapped by the dislocations are self-interstitials produced by electron displacement. Applying the stress it was possible to observe that modified dislocations did not glide while the dislocations not affected by the irradiation are visibly in movement. This important result explains the neutron and electron-irradiation induced work-hardening effect for Nb that was previously observed. (Author) [pt

AFM studies on heavy ion irradiated YBCO single crystals

International Nuclear Information System (INIS)

Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

2000-01-01

Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

International Nuclear Information System (INIS)

Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

1999-01-01

A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

Science.gov (United States)

Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

2012-01-01

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

International Nuclear Information System (INIS)

Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

2009-01-01

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

International Nuclear Information System (INIS)

Wang, L.M.; Birtcher, R.C.

1991-01-01

Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

Research Progress and Development of Sapphire Fiber Sensor

Directory of Open Access Journals (Sweden)

Guochang ZHAO

2014-07-01

Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

Imaging of gamma-Irradiated Regions of a Crystal

Science.gov (United States)

Dragoi, Danut; McClure, Steven; Johnston, Allan; Chao, Tien-Hsin

2004-01-01

A holographic technique has been devised for generating a visible display of the effect of exposure of a photorefractive crystal to gamma rays. The technique exploits the space charge that results from trapping of electrons in defects induced by gamma rays. The technique involves a three-stage process. In the first stage, one writes a holographic pattern in the crystal by use of the apparatus shown in Figure 1. A laser beam of 532-nm wavelength is collimated and split into signal and reference beams by use of a polarizing beam splitter. On its way to the crystal, the reference beam goes through a two-dimensional optical scanner that contains two pairs of lenses (L1y, L2y and L1x,L2x) and mirrors M1 and M2, which can be rotated by use of micrometer drives to make fine adjustments. The signal beam is sent through a spatial light modulator that imposes the holographic pattern, then through two imaging lenses L(sub img) on its way to the crystal. An aperture is placed at the common focus of lenses Limg to suppress high-order diffraction from the spatial light modulator. The hologram is formed by interference between the signal and reference beams. A camera lens focuses an image of the interior of the crystal onto a charge-coupled device (CCD). If the crystal is illuminated by only the reference beam once the hologram has been formed, then an image of the hologram is formed on the CCD: this phenomenon is exploited to make visible the pattern of gamma irradiation of the crystal, as described next. In the second stage of the process, the crystal is removed from the holographic apparatus and irradiated with rays at a dose of about 100 krad. In the third stage of the process, the crystal is remounted in the holographic apparatus in the same position as in the first stage and illuminated with only the reference beam to obtain the image of the hologram as modified by the effect of the rays. The orientations of M1 and M2 can be adjusted slightly, if necessary, to maximize the

Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials

Science.gov (United States)

Zhou, Dong; Wu, Liangcai; Wen, Lin; Ma, Liya; Zhang, Xingyao; Li, Yudong; Guo, Qi; Song, Zhitang

2018-04-01

The electron-beam-irradiation-induced crystallization of phase change materials in a nano sized area was studied by in situ transmission electron microscopy and selected area electron diffraction. Amorphous phase change materials changed to a polycrystalline state after being irradiated with a 200 kV electron beam for a long time. The results indicate that the crystallization temperature strongly depends on the difference in the heteronuclear bond enthalpy of the phase change materials. The selected area electron diffraction patterns reveal that Ge2Sb2Te5 is a nucleation-dominated material, when Si2Sb2Te3 and Ti0.5Sb2Te3 are growth-dominated materials.

Effect of defects induced by doping and fast neutron irradiation on the thermal properties of lithium ammonium sulphate crystals

International Nuclear Information System (INIS)

Kandil, S.H.; Ramadan, T.A.; Darwish, M.M.; Kassem, M.E.; El-Khatib, A.M.

1994-01-01

Structural defects were introduced in lithium ammonium sulphate crystals (LAS) either in the process of crystal growth (in the form of foreign ions) or by neutron irradiation. The effect of such defects on the thermal properties of LAS crystals was studied in the temperature range 300-500 K. It was assumed that the doped LAS crystals are composed of a two-phase system having different thermal parameters in each phase. The specific heat at constant pressure, C p , of irradiated samples was found to decrease with increasing irradiation doses. The thermal expansion of LAS crystals was found to be dependent on neutron irradiation, and was attributed to two processes: the release of new species and the trapping process. (author)

Antisite defects in γ-irradiated InP and InP crystals

International Nuclear Information System (INIS)

Aliev, M.I.; Rashidova, Sh.Sh.; Gusejnova, M.A.; Gadzhieva, N.N.

2008-01-01

By means of TL and IR spectroscopy methods, it has been found that γ-irradiation of lnP single crystals doped with Sn leads to TL peak appearance at 230 K with activation energy E a =0.19 eV. This peak is connected with vacancy-antisite donor-type doped defect complex formation under irradiation [ru

Effect of laser-plasma X-ray irradiation on crystallization of amorphous silicon film by excimer laser annealing

International Nuclear Information System (INIS)

Matsuo, Naoto; Uejukkoku, Kazuya; Heya, Akira; Takanashi, Yasuyuki; Amano, Sho; Miyamoto, Shuji; Mochizuki, Takayasu

2007-01-01

The effect of laser plasma soft X-ray (LPX) irradiation on crystallization by excimer laser annealing (ELA) was investigated at low ELA energy densities. The crystalline fraction at energy densities of 50 and 60 mJ/cm 2 for LPX followed by ELA is nearly equal to that at 80 to 100 mJ/cm 2 for the ELA method with non-LPX irradiation. The results obtained indicate that LPX irradiation before ELA reduces the critical energy density for the start of crystallization. The combined method of LPX irradiation and ELA will enable us to realize a low-temperature process for ELA crystallization. (author)

Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

International Nuclear Information System (INIS)

Stoker, D. S.; Keto, J. W.; Baek, J.; Wang, W.; Becker, M. F.; Kovar, D.

2006-01-01

We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χ xxxx (3) (3ω;ω,ω,ω)=1.52±0.25x10 -13 esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects

Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

Energy Technology Data Exchange (ETDEWEB)

Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

2012-01-01

Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

Effect of defects induced by doping and fast neutron irradiation on the thermal properties of lithium ammonium sulphate crystals

Energy Technology Data Exchange (ETDEWEB)

Kandil, S.H.; Ramadan, T.A.; Darwish, M.M. (Alexandria Univ. (Egypt). Dept. of Materials Science); Kassem, M.E.; El-Khatib, A.M. (Alexandria Univ. (Egypt). Dept. of Physics)

1994-05-01

Structural defects were introduced in lithium ammonium sulphate crystals (LAS) either in the process of crystal growth (in the form of foreign ions) or by neutron irradiation. The effect of such defects on the thermal properties of LAS crystals was studied in the temperature range 300-500 K. It was assumed that the doped LAS crystals are composed of a two-phase system having different thermal parameters in each phase. The specific heat at constant pressure, C[sub p], of irradiated samples was found to decrease with increasing irradiation doses. The thermal expansion of LAS crystals was found to be dependent on neutron irradiation, and was attributed to two processes: the release of new species and the trapping process. (author).

Defects in TiO2 crystals produced by neutron irradiations at 20 K

International Nuclear Information System (INIS)

Okada, M.; Nakagawa, M.; Atobe, K.; Kawabata, Y.

1994-01-01

The single crystals rutile (TiO 2 ), cut parallel and perpendicular to the c-axis, are irradiated by reactor neutrons at 20 K (8.0x10 16 n/cm 2 ; E>0.1 MeV). By means of optical measurements an intense absorption band, which has a maximum peak near 1 μm (having FWHM similar 0.87 eV), is observed and is annealed out at about 220 K. Also, some kinds of defect centers can be distinguished by ESR measurements. The broad band has similar characteristics to that in reduced TiO 2 crystal, in which the band has a maximum peak at 1.5 μm. With heavy reduction, the intensity of the broad band enhances with increasing electrical conductivity. It has been proposed that the origin of the band in reduced crystals may be attributable to the absorption of donors due to the polaron effects. The evidence for the assignment to the defect in the irradiated crystals is obtained by optical, ESR, and electrical resistivity measurements. The results lead to quite a different origin for the irradiation produced defect centers. ((orig.))

Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

Energy Technology Data Exchange (ETDEWEB)

Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1998-03-01

Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

Phase instability in crystals under irradiation

International Nuclear Information System (INIS)

Martin, G.

1975-01-01

A diffusion term is introduced in the standard chemical rate model of the defect population in crystals under irradiation. For point defect generation rates larger than a critical value (g*), the uniform point defect population is shown to be unstable with respect to spatial fluctuations of the point defect concentration. g* is temperature dependent. Severala effects including the nucleation of arrays of point defect clusters, or radiation induced precipitation may occur above the instability threshold. Defect-defect interaction potentials play a crucial role in the numerical value of this threshold [fr

Nanodefect formation in LiF crystals under gamma irradiation

International Nuclear Information System (INIS)

Mussaeva, M.A.; Ibragimova, Eh.M.; Kalanov, M.U.; Muminov, M.I.

2006-01-01

One studied the spectra of absorption and of photoluminescence, microhardness and performed X-ray structure analysis of gamma-irradiated LiF crystals in a shutdown reactor and in 60 Co source when gamma-radiation dose rate was equal to 7.65 Gy/s. In addition to formation of point and combined radiation defects one detected the presence of the gamma-irradiation induced 28 nm size nanoparticles of LiOH phase in Li sublattice. Formation of defects is shown to occur more efficiently in a shutdown reactor in contrast to 60 Co source [ru

Metallic Na formation in NaCl crystals with irradiation of electron or vacuum ultraviolet photon

Energy Technology Data Exchange (ETDEWEB)

Owaki, Shigehiro [Osaka Prefecture Univ., Sakai, Osaka (Japan). Coll. of Integrated Arts and Sciences; Koyama, Shigeko; Takahashi, Masao; Kamada, Masao; Suzuki, Ryouichi

1997-03-01

Metallic Na was formed in NaCl single crystals with irradiation of a variety of radiation sources and analyzed the physical states with several methods. In the case of irradiation of 21 MeV electron pulses to the crystal blocks, the optical absorption and lifetime measurement of positron annihilation indicated appearance of Na clusters inside. Radiation effects of electron beam of 30 keV to the crystals in vacuum showed the appearance of not only metallic Na but atomic one during irradiation with Auger electron spectroscopy. Intense photon fluxes in vacuum ultraviolet region of synchrotron radiation were used as another source and an analyzing method of ultraviolet photoelectron spectroscopy. The results showed the metallic Na layered so thick that bulk plasmon can exist. (author)

Influence of Gamma-Ray Irradiation on Absorption and Fluorescent Spectra of Nd:YAG and Yb:YAG Laser Crystals

Institute of Scientific and Technical Information of China (English)

SUN Dun-Lu; ZHANG Qing-Li; XIAO Jing-Zhong; LUO Jian-Qiao; JIANG Hai-He; YIN Shao-Tang

2008-01-01

We investigate the influence of gamma-ray irradiation on the absorption and fluorescent spectra of Nd3+ : Y3Al5O12 (Nd:YAG) and Yb3+ :Y3Al5O12 (Yb:YAG) crystals grown by the Czochralski method. Two additional absorption (AA) bands induced by gamma-ray irradiation appear at 255nm and 340nm. The former is eontributed due to Fe3+ impurity, the latter is due to Fe2+ ions and F-type colour centres. The intensity of the excitation and emission spectra as well as the fluorescent lifetime of Nd:YAG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, the same dose irradiation does not impair the fluorescent properties of Yb: YA G crystal. These results indicate that Yb: YA G crystal possesses the advantage over Nd: YA G crystal that has better reliability for applications in harsh radiant environment.

Material modifications in lithium niobate and lithium tantalate crystals by ion irradiation

International Nuclear Information System (INIS)

Raeth, Niels Lennart

2017-01-01

The artificially produced crystals lithium niobate (LiNbO 3 ) and the closely related lithium tantalate (LiTaO 3 ) are proven starting materials for producing active and passive devices that can guide, amplify, switch and process light. For this purpose, it is often necessary to be able to influence the refractive index of the substrate targeted, which is possible in addition to other methods by irradiation of the materials with fast light ions. In this work, lithium niobate and lithium tantalate crystals are irradiated with alpha particles, 3 He ions, deuterons, and protons at projectile energies of up to 14 MeV / nucleon. Energy and crystal thickness are chosen so that the projectiles penetrate the entire sample and are not implanted. All isotopes responsible for the unwanted nuclear activation of the crystals due to the irradiation are relatively short-lived and overall the activation decreases fast enough to allow the safe handling of the irradiated samples after a storage period of a few days to a few weeks. The refractive index changes produced in lithium niobate and lithium tantalate by irradiation with the different projectiles are determined interferometrically and can also be measured by suitable choice of the sample geometry as a function of the ion penetration depth: In LiNbO 3 the ordinary refractive index decreases, the extraordinary increases equally. In LiTaO 3 , both the ordinary and the extraordinary refractive indices decrease as a result of the irradiation; the ordinary refractive index change is many times stronger than the extraordinary one. There is an enormous long-term stability at room temperature for both crystal systems: Even after eleven (LiNbO 3 ) or three (LiTaO 3 ) years, no decrease in the ion beam-induced refractive index change can be observed. The ion beam-induced refractive index changes are probably the result of atomic displacements such as vacancies, defect clusters or ''latent tracks''. An explanation for

Radiation defects produced by neutron irradiation in germanium single crystals

International Nuclear Information System (INIS)

Fukuoka, Noboru; Honda, Makoto; Atobe, Kozo; Yamaji, Hiromichi; Ide, Mutsutoshi; Okada, Moritami.

1992-01-01

The nature of defects produced in germanium single crystals by neutron irradiation at 25 K was studied by measuring the electrical resistivity. It was found that two levels located at E c -0.06 eV and E c -0.13 eV were introduced in an arsenic-doped sample. Electron traps at E c -0.10eV were observed in an indium-doped sample. The change in electrical resistivity during irradiation was also studied. (author)

β-ray irradiation effects in RbBr: Eu crystals

International Nuclear Information System (INIS)

Pacheco B, J.M.; Rodriguez M, R.; Perez S, R.

2006-01-01

Defects induced by β-ray irradiation in RbBr: Eu 2+ crystals doped with a high concentration of Eu 2+ ions are studied by means of optical absorption (OA), thermoluminescence (TL), and optically stimulated TL (OSTL). The fading, dose, and optical bleaching effects on the TL glow curves of room temperature irradiated samples has been analyzed. OA indicates that irradiation of samples at room temperature induce the formation of F but not F z centers. The TL glow curves show peaks at 267, 303, and 403 K. The 267 K glow peak disappear in less than 1 s under blue light or infrared radiation photo bleaching. A high sensitivity to the ionizing radiation has been observed. These results confirm that this material is an efficient phosphor. (Author)

Reduced cost and improved figure of sapphire optical components

Science.gov (United States)

Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

2015-10-01

Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

Science.gov (United States)

Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

2018-04-01

Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

Stability to irradiation of SiGe whisker crystals used for sensors of physical values

Directory of Open Access Journals (Sweden)

Druzhinin A. A.

2011-04-01

Full Text Available An influence of g-irradiation (Co60 with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03 whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed.

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

Science.gov (United States)

Piccinini, M.; Ambrosini, F.; Ampollini, A.; Bonfigli, F.; Libera, S.; Picardi, L.; Ronsivalle, C.; Vincenti, M. A.; Montereali, R. M.

2015-04-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 1011-1015 protons/cm2. The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F2 and F3+ photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences.

Dislocation loops in spinel crystals irradiated successively with deep and shallow ion implants

International Nuclear Information System (INIS)

Ai, R.X.; Cooper, E.A.; Sickafus, K.E.; Nastasi, M.; Bordes, N.; Ewing, R.C.

1993-01-01

This study examines the influence of microstructural defects on irradiation damage accumulation in the oxide spinel. Single crystals of the compound MgAl 2 O 4 with surface normal [111] were irradiated under cryogenic temperature (100K) either with 50 keV Ne ions (fluence 5.0 x 10 12 /cm 2 ), 400 keV Ne ions (fluence 6.7 x 10 13 /cm 2 ) or successively with 400 keV Ne ions followed by 50 keV Ne ions. The projected range of 50 keV Ne ions in spinel is ∼50 mn (''shallow'') while the projected range of 400 keV Ne ions is ∼500 mn (''deep''). Transmission electron microscopy (TEM) was used to examine dislocation loops/defect clusters formed by the implantation process. Measurements of the dislocation loop size were made using weak-beam imaging technique on cross-sectional TEM ion-implanted specimens. Defect clusters were observed in both deep and shallow implanted specimens, while dislocation loops were observed in the shallow implanted sample that was previously irradiated by 400 keV Ne ions. Cluster size was seen to increase for shallow implants in crystals irradiated with a deep implant (size ∼8.5 nm) as compared to crystals treated only to a shallow implant (size ∼3.1 nm)

Epitactical FeAl films on sapphire and their magnetic properties; Epitaktische FeAl-Filme auf Saphir und ihre magnetischen Eigenschaften

Energy Technology Data Exchange (ETDEWEB)

Trautvetter, Moritz

2011-05-05

In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr{sup +} irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

Optical properties of CsI single crystals irradiated with neutrons at low temperature

International Nuclear Information System (INIS)

Okada, M.; Atobe, K.; Itatani, N.; Ozawa, K.

1998-01-01

Optical properties of the irradiation-induced-defects in neutron-irradiated CsI single crystals have been investigated. The nominally pure CsI crystals are irradiated by reactor fast neutrons (E>0.1 MeV) with a fluence of 1.4 x 10 15 n/cm 2 at 20 K and by γ-rays from 60 Co source to a dose of 1.5 x 10 4 Gy at liquid nitrogen temperature (LNT). After the irradiations, isochronal annealings are performed to investigate the thermal behavior of the defects. The glow peaks of the thermoluminescence (TL) in each sample irradiated with neutrons at 20 K and with γ-rays at LNT are observed at about 100, 160 and 220 K. In the neutron-irradiated samples at 20 K, the emission band at 338 nm is observed at LNT. It is supposed that this emission band occurs by an excitation of γ-rays from 134 Cs, which is radioactivated by thermal neutrons among the reactor radiations. It is confirmed that the temperature dependence of the 338 nm band is similar with that of the emission band due to the self-trapped exciton which is introduced into the non-irradiated samples illuminated by higher energy photons. (orig.)

Optical properties of CsI single crystals irradiated with neutrons at low temperature

Energy Technology Data Exchange (ETDEWEB)

Okada, M. [Kyoto Univ., Kumatori, Osaka (Japan). Research Reactor Inst.; Nakagawa, M. [Faculty of Education, Kagawa Univ., Takamatsu, Kagawa (Japan); Atobe, K. [Faculty of Science, Naruto Univ. of Education, Naruto, Tokushima (Japan); Itatani, N.; Ozawa, K. [Horiba Ltd., Minamiku, Kyoto (Japan)

1998-05-01

Optical properties of the irradiation-induced-defects in neutron-irradiated CsI single crystals have been investigated. The nominally pure CsI crystals are irradiated by reactor fast neutrons (E>0.1 MeV) with a fluence of 1.4 x 10{sup 15} n/cm{sup 2} at 20 K and by {gamma}-rays from {sup 60}Co source to a dose of 1.5 x 10{sup 4} Gy at liquid nitrogen temperature (LNT). After the irradiations, isochronal annealings are performed to investigate the thermal behavior of the defects. The glow peaks of the thermoluminescence (TL) in each sample irradiated with neutrons at 20 K and with {gamma}-rays at LNT are observed at about 100, 160 and 220 K. In the neutron-irradiated samples at 20 K, the emission band at 338 nm is observed at LNT. It is supposed that this emission band occurs by an excitation of {gamma}-rays from {sup 134}Cs, which is radioactivated by thermal neutrons among the reactor radiations. It is confirmed that the temperature dependence of the 338 nm band is similar with that of the emission band due to the self-trapped exciton which is introduced into the non-irradiated samples illuminated by higher energy photons. (orig.) 13 refs.

Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

Science.gov (United States)

Sarkar, A.; Chakrabarti, Mahuya; Sanyal, D.; Bhowmick, D.; Dechoudhury, S.; Chakrabarti, A.; Rakshit, Tamita; Ray, S. K.

2012-08-01

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H+ ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ˜4 × 1017 cm-3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ˜175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

International Nuclear Information System (INIS)

Sarkar, A; Chakrabarti, Mahuya; Sanyal, D; Bhowmick, D; Dechoudhury, S; Chakrabarti, A; Rakshit, Tamita; Ray, S K

2012-01-01

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H + ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10 17 cm -3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed. (paper)

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal.

Science.gov (United States)

Sarkar, A; Chakrabarti, Mahuya; Sanyal, D; Bhowmick, D; Dechoudhury, S; Chakrabarti, A; Rakshit, Tamita; Ray, S K

2012-08-15

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

Positron annihilation lifetime measurement of electron-irradiated ZnO crystals

International Nuclear Information System (INIS)

Tomiyama, N.; Takenaka, M.; Kuramoto, E.

1992-01-01

In order to clarify the basic properties of radiation-induced defects in ZnO crystals positron annihilation lifetime measurements were performed for the ZnO crystals irradiated by 28 MeV electrons at 77 K. The electron-irradiation induced the color change of the specimens from the original yellowish-white to the orange and long lifetime component of about 200 psec. The isochronal annealing experiments showed that the decrease of the positron annihilation lifetime appeared in the temperature range between 423 and 473 K and between 723 and 923 K. The radiation-induced color change disappeared in the first temperature range. It can be considered that the first stage corresponds to migration and recovery of radiation-induced oxygen vacancies. It is difficult to identify the second stage, but it might be the recovery stage of small ZnO interstitial clusters formed through clustering of Zn and O interstitials

Electrical and thermoluminescence properties of γ-irradiated La2CuO4 crystals

Science.gov (United States)

El-Kolaly, M. A.; Abd El-Kader, H. I.; Kassem, M. E.

1994-12-01

Measurements of the electrical properties of unirradiated as well as ?-irradiated La2CuO4 crystals were carried out at different temperatures in the frequency range of 0.1-100 kHz. Thermoluminescence (TL) studies were also performed on such crystals in the temperature range of 300-600K. The conductivity of the unirradiated La2CuO4 crystals were found to obey the power law frequency dependence at each measured temperature below the transition temperature (Tc = 450K). The activation energies for conduction and dielectric relaxation time have been calculated. The TL response and the dc resistance were found to increase with ?-irradiation dose up to 9-10 kGy. The results showed that the ferroelastic domain walls of La2CuO4 crystal as well as its TL traps are sensitive to ?-raditaion. This material can be used in radiation measurements in the range 225 Gy-10 kGy.

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

International Nuclear Information System (INIS)

Piccinini, M; Ambrosini, F; Ampollini, A; Bonfigli, F; Libera, S; Picardi, L; Ronsivalle, C; Vincenti, M A; Montereali, R M

2015-01-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 10 11 -10 15 protons/cm 2 . The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F 2 and F 3 + photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences. (paper)

Irradiation-related amorphization and crystallization: In situ transmission electron microscope studies

International Nuclear Information System (INIS)

Allen, C.W.

1994-01-01

Interfacing an ion accelerator to a transmission electron microscope (TEM) allows the analytical functions of TEM imaging and diffraction to be employed during ion-irradiation effects studies. At present there are twelve such installations in Japan, one in France and one in the US. This paper treats several aspects of in situ studies involving electron and ion beam induced and enhanced phase transformations and presents results of several in situ experiments to illustrate the dynamics of this approach in the materials science of irradiation effects. The paper describes the ion- and electron-induced amorphization of CuTi; the ion-irradiation-enhanced transformation of TiCr 2 ; and the ion- and electron-irradiation-enhanced crystallization of CoSi 2

Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

Science.gov (United States)

Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

2015-01-01

Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

'In situ' straining in the HVEM of neutron irradiated copper crystals

International Nuclear Information System (INIS)

Johnson, E.; Hirsch, P.B.

1976-01-01

High energy neutron irradiated copper single crystals strained 'in situ' in the high voltage electron microscope are observed to yield in relatively few strongly developed slip bands. The deformation in the slip bands is caused by glide of inclined dislocations close to screw orientation belonging to the primary slip system. Radiation induced point defect clusters are swept up by the dislocations whereby superjogs are formed. Some of the jogs will be sessile and act as pinning points for the gliding dislocations, which bow out under the applied stress to form perfect dipoles mainly of edge nature, as well as faulted dipoles, which are finally pinched off. The effective stress measured from the radius of curvature of the bowed-out dislocations is in agreement with resolved flow stress measurements from irradiated bulk crystals. (Auth.)

Piles of dislocation loops in real crystals. 2. Evolution of dislocation piles under irradiation

International Nuclear Information System (INIS)

Dubinko, V.I.; Turkin, A.A.; Yanovskij, V.V.

1985-01-01

The given paper considers evolution of piles in a real molybdenum crystal under neutron irradiation. Obtained was a stability criterium, when meeting it interstitial piles (one-dimensional periodical structures of interstitial loops) in the crystal tend to stationary state under the irradiation and, when disturbing the criterium, they disintegrate into rapidly growing interstitial isolated loops. It was also shown that the generation of dense vacancy piles results in the formation of an ordering structure of isolated vacancy loops. Theoretical results agree good with experimental data

Automatically controlled facilities for irradiation of silicon crystals at the Rossendorf Research Reactor

International Nuclear Information System (INIS)

Ross, R.

1988-01-01

This report describes the facilities for neutron transmutation doping of silicon in GDR. The irradiation of silicon single crystals began at Rossendorf in 1978 with simple equipment. Only a small amount of silicon could be irradiated in it. The fast increasing need of NTD-silicon made it necessary to design and construct new and better facilities. The new facilities are capable of irradiating silicon from 2'' to 3'' in diameter. The irradiation process takes place automatically with the assistance of a computer. Material produced has an axial homogeneity of ± 7%. Irradiation riggs, techniques, irradiation control and quality control are discussed. (author). 4 figs

Effect of SHI irradiation on structural, surface morphological and optical studies of CVT grown ZnSSe single crystals

International Nuclear Information System (INIS)

Kannappan, P.; Asokan, K.; Krishna, J.B.M.; Dhanasekaran, R.

2013-01-01

Highlights: •CVT grown ZnSSe single crystals were irradiated with 120 MeV Au ion. •The GIXRD results show the FWHM increases with increasing ion fluency. •The AFM study show the surface roughness increases with ion fluency. •The optical band gap energy vary with increasing ion fluency. •The PL emission decreases with increasing ion fluency. -- Abstract: The ZnSSe single crystals grown by chemical vapour transport (CVT) method have been irradiated by 120 MeV Au 9+ ions at room temperature with fluences of 1 × 10 12 and 5 × 10 12 ions/cm 2 . The grazing incidence X-ray diffraction (GIXRD) results show that the full width at half maximum (FWHM) value for the as grown ZnSSe crystal is 0.215°; and for the irradiated samples, the FWHM values are 0.413° and 0.625°, with the increase of ion fluences. The atomic force microscopy (AFM) studies reveal the formation of the pits and islands due to irradiation. The optical absorption cut off wavelength is found to be 441 nm for as grown ZnSSe crystal. The cut off values are increased to 447 nm and 457 nm for the irradiated samples with increasing ion fluency. The photoluminescence studies show the emission for the as grown ZnSSe is 590 nm whereas for the irradiated samples in the emission range it is 580–590 nm and 575–595 nm due to SHI irradiation. FT-Raman spectra analysis has been made for the ZnSSe single crystals and irradiated samples. The results are discussed in detail

Effect of SHI irradiation on structural, surface morphological and optical studies of CVT grown ZnSSe single crystals

Energy Technology Data Exchange (ETDEWEB)

Kannappan, P. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Krishna, J.B.M. [UGC-DAE Consortium for Scientific Research, III-/LB-8, Bidhan nagar, Kolkata 700 098 (India); Dhanasekaran, R., E-mail: rdcgc@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

2013-12-15

Highlights: •CVT grown ZnSSe single crystals were irradiated with 120 MeV Au ion. •The GIXRD results show the FWHM increases with increasing ion fluency. •The AFM study show the surface roughness increases with ion fluency. •The optical band gap energy vary with increasing ion fluency. •The PL emission decreases with increasing ion fluency. -- Abstract: The ZnSSe single crystals grown by chemical vapour transport (CVT) method have been irradiated by 120 MeV Au{sup 9+} ions at room temperature with fluences of 1 × 10{sup 12} and 5 × 10{sup 12} ions/cm{sup 2}. The grazing incidence X-ray diffraction (GIXRD) results show that the full width at half maximum (FWHM) value for the as grown ZnSSe crystal is 0.215°; and for the irradiated samples, the FWHM values are 0.413° and 0.625°, with the increase of ion fluences. The atomic force microscopy (AFM) studies reveal the formation of the pits and islands due to irradiation. The optical absorption cut off wavelength is found to be 441 nm for as grown ZnSSe crystal. The cut off values are increased to 447 nm and 457 nm for the irradiated samples with increasing ion fluency. The photoluminescence studies show the emission for the as grown ZnSSe is 590 nm whereas for the irradiated samples in the emission range it is 580–590 nm and 575–595 nm due to SHI irradiation. FT-Raman spectra analysis has been made for the ZnSSe single crystals and irradiated samples. The results are discussed in detail.

Crystal Growth Technology

Science.gov (United States)

Scheel, Hans J.; Fukuda, Tsuguo

2004-06-01

This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: General aspects of crystal growth technology Silicon Compound semiconductors Oxides and halides Crystal machining Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

Modelling irradiation-induced softening in BCC iron by crystal plasticity approach

International Nuclear Information System (INIS)

Xiao, Xiazi; Terentyev, Dmitry; Yu, Long; Song, Dingkun; Bakaev, A.; Duan, Huiling

2015-01-01

Crystal plasticity model (CPM) for BCC iron to account for radiation-induced strain softening is proposed. CPM is based on the plastically-driven and thermally-activated removal of dislocation loops. Atomistic simulations are applied to parameterize dislocation-defect interactions. Combining experimental microstructures, defect-hardening/absorption rules from atomistic simulations, and CPM fitted to properties of non-irradiated iron, the model achieves a good agreement with experimental data regarding radiation-induced strain softening and flow stress increase under neutron irradiation. - Highlights: • A stress- and thermal-activated defect absorption model is proposed for the dislocation-loop interaction. • A temperature-dependent plasticity theory is proposed for the irradiation-induced strain softening of irradiated BCC metals. • The numerical results of the model match with the corresponding experimental data.

Modelling irradiation-induced softening in BCC iron by crystal plasticity approach

Energy Technology Data Exchange (ETDEWEB)

Xiao, Xiazi [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); CAPT, HEDPS and IFSA Collaborative Innovation Center of MoE, Peking University, Beijing 100871 (China); Terentyev, Dmitry, E-mail: dterenty@SCKCEN.BE [Structural Material Group, Institute of Nuclear Materials Science, SCK-CEN, Mol (Belgium); Yu, Long; Song, Dingkun [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); Bakaev, A. [Structural Material Group, Institute of Nuclear Materials Science, SCK-CEN, Mol (Belgium); Duan, Huiling, E-mail: hlduan@pku.edu.cn [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); CAPT, HEDPS and IFSA Collaborative Innovation Center of MoE, Peking University, Beijing 100871 (China)

2015-11-15

Crystal plasticity model (CPM) for BCC iron to account for radiation-induced strain softening is proposed. CPM is based on the plastically-driven and thermally-activated removal of dislocation loops. Atomistic simulations are applied to parameterize dislocation-defect interactions. Combining experimental microstructures, defect-hardening/absorption rules from atomistic simulations, and CPM fitted to properties of non-irradiated iron, the model achieves a good agreement with experimental data regarding radiation-induced strain softening and flow stress increase under neutron irradiation. - Highlights: • A stress- and thermal-activated defect absorption model is proposed for the dislocation-loop interaction. • A temperature-dependent plasticity theory is proposed for the irradiation-induced strain softening of irradiated BCC metals. • The numerical results of the model match with the corresponding experimental data.

Thermoluminescence and electron spin resonance studies of irradiated biological single crystals

International Nuclear Information System (INIS)

Cooke, D.W.

1977-01-01

Single crystals of x-irradiated L-alanine:Cr 3+ have been studied between 90 and 300K by electron spin resonance (ESR) and thermoluminescence (TL) techniques. Ultraviolet (uv) photobleaching of the Cr 3+ electron traps and L-alanine radical centers was also investigated. The results demonstrate that the x-ray generated radical centers can be destroyed by uv-induced electron transport activity, and this destruction follows first order kinetics. Also, the transformation of the primary neutral radical species to a secondary radical in L-alanine was found not to be induced by intermolecular electron transport. The TL glow was determined to proceed by first-order kinetics at a temperature of 160K with an activation energy of 0.3 eV and a frequency factor of 1.0 x 10 8 s -1 . The emission spectrum consisted of a broad band (FWHM approx. = 100 nm) which peaked at approximately 420 nm. Scintillation activity was observed in the ferroelectric crystals triglycine sulfate (TGS), deuterated TGS, and TGS: L-alanine. The emission spectrum of TGS:L-alanine was obtained. New observations of scintillations and current pulses from glycine, a nonferroelectric crystal, which result from heating or cooling the sample between 77 and 300K with no previous irradiation were made. The scintillations and current pulses occur approximately in coincidence. Scintillations were also observed from the potent oncogen 3-hydroxyxanthine by cooling the sample from 300 to 90K with no previous irradiation

Electrophysical properties of In P crystals, irradiated with CO-60 gamma quanta

International Nuclear Information System (INIS)

Aliyev, M.I.; Guseynova, M.A.; Aliyev, I.M.; Ragimov, S.S.

2005-01-01

Full text : n-InP monocrystals were investigated before and after gamma irradiation having a doze about 10 and also within temperature interval from 77 to 320 K. On χ(T) and σ(T) dependences it is revealed that during gamma irradiation p-type antistructural defects are generated in n-InP crystals. It gives an opportunity of receiving of not alloyed semiinsulating indium fosfide [ru

Controllable laser thermal cleavage of sapphire wafers

Science.gov (United States)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

2015-10-30

Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

International Nuclear Information System (INIS)

Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

1991-01-01

The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

Effect of KrF excimer laser irradiation on the surface changes and photoelectric properties of ZnO single crystal

Energy Technology Data Exchange (ETDEWEB)

Zeng, Yong [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China); Zhao, Yan [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Jiang, Yijian, E-mail: yjjiang@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China)

2016-06-25

In this paper, the effect of KrF pulsed excimer laser irradiation on the structural, surface morphology, photoluminescence and electrical properties of ZnO single crystal was investigated. Compared to the as-grown sample, at an irradiation energy density of 257 mJ/cm{sup 2}, the ZnO single crystal exhibits a series of phenomenon: XRD and Raman results show that the crystallization of ZnO quality change slightly, resistivity is decreased by two orders of magnitude, carrier concentration is increased by one order of magnitude. After laser irradiation, the surface shows some strip lines and no cracks. Formula calculation and simulation results show that the stripes are not caused by surface melting. We speculate that these stripes are caused by the precipitation of ZnO material inside to the surface. Due to the reduction of oxygen vacancies, UV emission has been enhanced and visible emission has been declined after irradiation. After the laser irradiation, the visible light of ZnO surface can be regulated. The experimental results show that KrF laser irradiation could effectively improve the optical and electrical properties of ZnO single crystal, which is important for the application of high performance of emitting optoelectronic devices. - Highlights: • After laser irradiation, the surface shows some strip lines and no cracks. • The visible light of as-irradiated ZnO surface can be regulated to four colors. • The electrical properties of as-irradiated ZnO has been improved greatly.

Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

Energy Technology Data Exchange (ETDEWEB)

Grachev, V.; Meyer, M.; Malovichko, G. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Hunt, A. W. [Idaho Accelerator Center, Idaho State University, Pocatello, Idaho 83209 (United States)

2014-12-07

Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20 MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and γ-radiation.

Cold crystallization of polytetrafluoroethylene by γ irradiation

International Nuclear Information System (INIS)

Takenaga, M.; Yamagata, K.

1980-01-01

Changes in density and in the corresponding degree of crystallinity with radiation dose are studied experimentally for γ-irradiated polytetrafluoroethylene (PTFE) in the dose range from 1 x 10 3 to 1 x 10 9 R. The relation between the amorphous fraction and the radiation dose is derived from a quantitative analysis of cold crystallization by scission of polymer backbone chains. The characteristic radiation dose, at which one break occurs on the average per initial molecule, is estimated as about 3 x 10 4 R on the basis of a derived kinetic equation. The theoretical relation is modified by considering microvoids produced in the irradiated samples. The radii of microvoids in the form of spheres are evaluated as about 0.2 nm, and are also related to cage spheres relevant to the chain scission process. Good agreement between the modified theoretical relation and experimental data is attained over the entire range of radiation dose. 4 figures, 1 table

Enhancements of the critical currents of YBaCuO single crystals by neutron (n) and proton (p) irradiation

International Nuclear Information System (INIS)

Vlcek, B.M.; Frischherz, M.C.; Vishwanathan, H.K.; Welp, U.; Crabtree, G.W.; Kirk, M.A.

1992-01-01

We present results of magnetization hysteresis and T c measurements of neutron and proton irradiated YBaCuO single crystals. The crystals used for comparison were irradiated to a fluence of 2x10 7 n/cm 2 (n,E > 0.1MeV) and 1x10 16 p/cm 2 (p,E=3.5MeV). The critical currents at 1T and 10K are enhanced by a factor of 5 for the neutron irradiated and a factor of 9 for the proton irradiated sample respectively. After irradiation the crystals were annealed at 100, 200 and 300C for 8h each in air. Following each annealing step the critical temperature and the magnetization hysteresis at 10 and 70K was measured. Upon annealing, we observe a decrease of the critical currents, which is more pronounced for the proton irradiated sample. This decrease is related to the removal of point defects or their small clusters. Thus, their contribution to pinning can be studied. The critical temperature decreases after both types of irradiation by about 0.5K and is fully recovered after annealing

Developments of a bonding technique for optical materials by a surface activation method

International Nuclear Information System (INIS)

Sugiyama, Akira; Oda, Tomohiro; Abe, Tomoyuki; Kusunoki, Isao

2005-01-01

We started developing the laser crystal bounding by the surface activation method which can splice crystals together without using hydrogen bonding. For the surface activation, neutral argon beams were used for irradiation of specimens. In the bonding trials with sapphire crystals, we recognized possibility of the bonding method for optical elements. (author)

Coherent anti-Stokes Raman scattering microscopy with a photonic crystal fiber based light source

DEFF Research Database (Denmark)

Paulsen, H.N.; Hilligsøe, Karen Marie; Thøgersen, J.

2003-01-01

A coherent anti-Stokes Raman scattering microscope based on a Ti:sapphire femtosecond oscillator and a photonic crystal fiber is demonstrated. The nonlinear response of the fiber is used to generate the additional wavelength needed in the Raman process. The applicability of the setup is demonstra......A coherent anti-Stokes Raman scattering microscope based on a Ti:sapphire femtosecond oscillator and a photonic crystal fiber is demonstrated. The nonlinear response of the fiber is used to generate the additional wavelength needed in the Raman process. The applicability of the setup...

Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

International Nuclear Information System (INIS)

Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

2001-01-01

Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

Oleophobic properties of the step-and-terrace sapphire surface

Energy Technology Data Exchange (ETDEWEB)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

2017-03-15

Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.

Crystal lattice dependency of the free radicals found in irradiated glycine

NARCIS (Netherlands)

Bie, M.J.A. de; Braams, R.

1969-01-01

The EPR spectra, and hence the stable free radicals, are different for the - or γ-irradiated α-, β- and γ-crystal forms of polycrystalline glycone. Therefore comparisons of the trideutero-glycine EPR spectrum with the EPR spectra of non-deuterated glycine are open to question

Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

DEFF Research Database (Denmark)

Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

2017-01-01

higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

Alignment control of columnar liquid crystals with wavelength tunable CO2 laser irradiation

International Nuclear Information System (INIS)

Monobe, Hirosato; Awazu, Kunio; Shimizu, Yo

2008-01-01

Infrared-induced alignment change with wavelength tunable CO 2 laser irradiation for columnar liquid crystal domains was investigated for a liquid crystalline triphenylene derivative. A uniformly aligned alignment change of domains was observed when a chopped linearly polarized infrared laser light corresponding to the wavelength of the aromatic C-O-C stretching vibration band (9.65 μm) was irradiated. The results strongly imply that the infrared irradiation is a possible technique for device fabrication by use of columnar mesophase as a liquid crystalline semiconductor

Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

Science.gov (United States)

Carroz, L.; Duffar, T.

2018-05-01

In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

Leveraging Python Interoperability Tools to Improve Sapphire's Usability

Energy Technology Data Exchange (ETDEWEB)

Gezahegne, A; Love, N S

2007-12-10

The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

Trapped electrons in irradiated single crystals of polyhydroxy compounds

International Nuclear Information System (INIS)

Box, H.C.; Budzinski, E.E.; Freund, H.G.; Potter, W.R.

1979-01-01

The intermolecular trapping of electrons has been observed in single crystals of dulcitol and L(+) arabinose x-irradiated at 4.2 0 K. Attribution of a major component of the ESR absorption to trapped electrons is based upon the character of the hyperfine pattern, which arises from multiple anisotropic hyperfine interactions with exchangeable protons, and on the g value of the absorption, which is always less than the free spin value. The removal of the trapped electron absorption upon irradiation with visible light has also been demonstrated. In these experiments all of the electrons are trapped in identical sites. This circumstance provides some important advantages in the study of the factors affecting the stabilization of charge in an environment of polarizable molecules

Irradiation-initiated plastic deformation in prestrained single-crystal copper

International Nuclear Information System (INIS)

Li, Bo; Wang, Liang; Jian, Wu-Rong; E, Jun-Cheng; Ma, Hong-Hao; Luo, Sheng-Nian

2016-01-01

With large-scale molecular dynamics simulations, we investigate the response of elastically prestrained single-crystal Cu to irradiation as regards the effects of prestrain magnitude and direction, as well as PKA (primary knock-on atom) energy. Under uniaxial tension, irradiation induces such defects as Frenkel pairs, stacking faults, twins, dislocations, and voids. Given the high dislocation concentration, twins and quad-stacking faults form through overlapping of different stacking faults. Voids nucleate via liquid cavitation, and dislocations around void play a lesser role in the void nucleation and growth. Dislocation density increases with increasing prestrain and PKA energy. At a given prestrain, there exists a critical PKA energy for dislocation activation, which decreases with increasing prestrain and depends on crystallographic direction of the applied prestrain.

Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

Science.gov (United States)

Maskell, P.; Oram, L.

The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

Point defects and magnetic properties of neutron irradiated MgO single crystal

Directory of Open Access Journals (Sweden)

Mengxiong Cao

2017-05-01

Full Text Available (100-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID. The reciprocal space mappings (RSMs of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

Inhomogeneous strain induced by fast neutron irradiation in NaKSO4 crystals

International Nuclear Information System (INIS)

Kandil, S.H.; Kassem, M.E.; El-Khatib, A.; El-Gamal, M.A.; El-Wahidy, E.F.

1987-01-01

The paper reports the effect of fast neutron irradiation on the thermal properties of NaKSO 4 crystals in the temperature range 400-475 K. Results are presented for the thermal expansion, tensile strain and specific heat of NaKSO 4 , as a function of neutron irradiation dose. All these results revealed an inhomogeneous strain induced by the radiation. It is suggested that this induced inhomogeneous strain could be used to detect neutron exposure doses. (UK)

Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

Energy Technology Data Exchange (ETDEWEB)

Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

2009-08-01

The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

Hardening and formation of dislocation structures in LiF crystals irradiated with MeV-GeV ions

CERN Document Server

Manika, I; Schwartz, K; Trautmann, C

2002-01-01

Material modifications of LiF crystals irradiated with Au, Pb and Bi ions of MeV to GeV energy are studied by means of microindentation measurements and dislocation etching. Above a critical irradiation fluence of 10 sup 9 ions/cm sup 2 , the microhardness can improve by a factor of 2 in the bulk and by more than 3 on the surface. Radiation-induced hardening follows the evolution of the energy loss along the ion path. Annealing experiments indicate that complex defect aggregates created in the tracks play a major role for the hardness change. Evidence for severe structural modifications is found when etching indentation impressions in highly irradiated crystals leading to similar pattern as in amorphous or micro-grained materials. Dislocation etching also reveals long-range stress fields extending far beyond the implantation zone deep into the nonirradiated crystal.

Spatial chirp in Ti:sapphire multipass amplifier

International Nuclear Information System (INIS)

Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

2017-01-01

The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

EPR studies of gamma-irradiated taurine single crystals

International Nuclear Information System (INIS)

Bulut, A.; Karabulut, B.; Tapramaz, R.; Koeksal, F.

2000-01-01

An EPR study of gamma-irradiated taurine [C 2 H 7 NO 3 S] single crystal was carried out at room temperature. The EPR spectra were recorded in the three at mutually perpendicular planes. There are two magnetically distinct sites in monoclinic lattice. The principle values of g and hyperfine constants for both sites were calculated. The results have indicated the presence of 32 SO - 2 and 33 SO - 2 radicals. The hyperfine values of 33 SO - 2 radical were used to obtain O-S-O bond angle for both sites

Intensification of electroluminescence of ZnSe(Te,O) crystals after gamma-irradiation

International Nuclear Information System (INIS)

Elmurotova, D.B.; Ibragimova, E. M.

2006-01-01

Full text: Wide-gap A 2 B 6 semiconductors are of special interest within eyeshot of energy-saving, on the base of which light sources are produced. Excitation voltage for injection electro luminescence (EL) corresponds to a transition potential barrier height, and wavelength determines the radiative transition energy and a recombination level position. The problem is in increasing the EL excitation efficiency, in particular the way of lowering the working voltage. The aim of the present work is experimental researches of possible amendment of EL characteristics of wide-gap ZnSe(Te,O) single crystals by influence of ionizing gamma-radiation on the electrical and optical active centers, and also exposure of possibility for creation of light emitting structures. We studied ZnSe crystals grown with Bridgman method at the Research Institute for Single Crystals (Kharkov, Ukraine). Diffusion doping with Te was used for creation of p-n transition in ZnSe crystals, that resulted in additional generation of Zn vacancies, treatment in oxidizing environment caused formation of extra Zn interstitials. Dominating evaporation of Zn, which is stipulated by a higher mobility of Zn i , leads to the increase of defect concentration of V Zn type, this process is vividly expressed in the crystals doped with Te that may be explained by the formation of stable V Zn Te Se Zn i associates. A few samples of each series were irradiated with≅ 1.25 MeV gamma-rays of 60 Co radioisotope source at the dose power of 10 Gy/s to the dose of 10 6 Gy at 300 K and compared with the non-irradiated reference samples. Spectra of EL were measured in the wave range of 200-900 nm at 300 K. A constant voltage in the range of 7-80 V was applied in straight and inverse direction for exposing hysteresis in the EL voltage-brightness dependences. The EL spectra include a wide band with the maximum at 600 nm. For the untreated samples the threshold voltage was 70-80 V, when the EL intensity began growing sharply

Effects of ultrasonic irradiation on crystallization and structural properties of EMT-type zeolite nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ng, Eng-Poh, E-mail: epng@usm.my [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia); Awala, Hussein [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Ghoy, Jia-Pei [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia); Vicente, Aurélie [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Ling, Tau Chuan [Institute of Biological Sciences, Faculty of Science, University of Malaya (Malaysia); Ng, Yun Hau [School of Chemical Engineering, The University of New South Wales, Sydney (Australia); Mintova, Svetlana [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Adam, Farook, E-mail: farook@usm.my [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia)

2015-06-01

Synthesis of EMT zeolite nanocrystals from rice husk ash biomass (RHA) under continuous ultrasonic irradiation is reported. The aging, nucleation and crystallization stages of EMT zeolite in the system were monitored at ambient temperature, and compared with the conventional hydrothermal method. It was found that ultrasonic wave induced rapid crystal growth of the nanosized EMT zeolite. Complete crystallization of EMT nanocrystals was achieved within 24 h which was much faster than conventional hydrothermal synthesis (36 h). Furthermore, XRD and TEM analyses revealed that more nuclei were formed during the nucleation stage, allowing the preparation of smaller zeolite nanocrystals with high crystallinity. The results also showed that sonocrystallization produced EMT zeolite with high yield (ca. 80%). The ultrasound-prepared EMT nanocrystals were also found to have high porosity and high hydrophilicity, making the material promising for water sorption applications including vapor sensing, heat pump and adsorption technologies. - Highlights: • Nanosized EMT zeolites are formed from rice husk ash under ultrasonic irradiation. • The effects of ultrasonic waves in nanosized EMT zeolite synthesis are studied. • Ultrasound induces rapid crystal growth and produces high zeolite yield. • Smaller zeolite nanocrystals with high crystallinity and large defect sites are obtained. • Improved surface hydrophilicity of crystals is beneficial for water sorption applications.

Coloration dependence in the thermoluminescence properties of the double doped NaCl single crystals under gamma irradiation

International Nuclear Information System (INIS)

Sanchez-Mejorada, G.; Gelover-Santiago, A.L.; Frias, D.

2006-01-01

In this work the behaviour of calcium manganese doped NaCl single crystals under gamma irradiation is reported. Various single crystals of NaCl doped with Ca and Mn have been irradiated at different doses with ionising radiation. The production of defects has been correlated to the increase in the intensity of the thermo luminescent glow curve as a function of doses. The glow curves intensity as a function of doses shows the potential use of these materials as dosimeters. Optical properties of such crystals after irradiation with gamma rays have also been studied; results have shown their potentiality as a good detector and optical store memory devices. Since the creations of colour centres by photons with energy less than the band gap energy has been detected also in ns 2 -ion doped alkali halides. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

AG, TL, and IRSL dosimetric properties in X-ray irradiated HPHT diamond crystals

Energy Technology Data Exchange (ETDEWEB)

Gil-Tolano, M.I. [Programa de Posgrado, Departamento de Investigacion en Fisica, Universidad de Sonora, A. P. 5-088, Hermosillo, Sonora, 83190, Mexico (Mexico); Melendrez, R.; Lancheros-Olmos, J.C.; Soto-Puebla, D.; Chernov, V.; Pedroza-Montero, M.; Barboza-Flores, M. [Departamento de Investigacion en Fisica, Universidad de Sonora, A. P. 5-088, Hermosillo, Sonora, 83190, Mexico (Mexico); Castaneda, B. [Departamento de Fisica, Universidad de Sonora, Blvd. Luis Encinas y Rosales S/N, Hermosillo, Sonora, 83000, Mexico (Mexico)

2014-10-15

HPHT diamonds have been studied for several years for their potential in different applications. In previous studies it has been found that the thermoluminescence (TL) glow curves of ''as-grown'' HPHT diamonds are non-reproducible. In this work, we study the afterglow (AG), thermoluminescent (TL), and optically stimulated luminescence (OSL) response of commercial samples of synthetic HPHT type-Ib diamond crystals exposed to X-ray irradiation (0.75 mA, 35 kV) at a dose rate of 0.624 Gy/s, after a high gamma ({sup 60}Co) dose irradiation of 500 kGy followed by a thermal treatment at 1073 K for 1 h in nitrogen atmosphere. Deconvolution of the TL glow curves shows four peaks, located around 379, 509, 561, and 609 K. The crystals exhibit evident AG recorded for 300 s immediately after X-ray irradiation, due to the thermal emptying of the traps responsible for the low-temperature TL peaks (below 400 K). The stimulation of irradiated crystals with 870-nm light, creates pronounced OSL and destroys all TL peaks with the exception of the high-temperature peak at 609 K. The dose responses of the integrated AG, TL, and OSL are linear in the range of 0.6-5 Gy and saturated at higher doses. The reproducibility of AG, TL, and OSL measurements is about 5%. The fading in the first hour of storage in dark conditions at RT of TL signal of HPHT diamond is mainly associated to the emptying of the traps responsible for the 379-K TL peaks. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of composition and. gamma. -irradiation on crystal lattice spacing of lead sulphide

Energy Technology Data Exchange (ETDEWEB)

Indenbaum, G V; Novikova, S F; Vanyukov, A V; Dvorkin, Yu V [Moskovskij Inst. Stali i Splavov (USSR)

1981-02-01

Value of crystal lattice spacing of lead sulphide after annealing and quenching at temperatures of 600, 700 and 800 deg C are found for the both boundaries of homogeneity region with error of 5x10/sup -5/A. The effect of ..gamma.. irradiation with quanta energy of 1.25 MeV from /sup 60/Co source (10/sup 4/, 10/sup 5/ and 10/sup 6/ G/kg) on crystal lattice spacing of lead sulphide preliminary saturated with sulphur or lead at 600 deg C, is studied. It is established that lattice spacing of lead sulphide depends on material prehistory and decreases at room temperature after quenching and ..gamma..-irradiation. Effect of natural ageing of lead sulphide is explained by the decomposition of nonstechiometric solid solution, supersaturated with components, at room temperature.

Nanostructured sapphire optical fiber for sensing in harsh environments

Science.gov (United States)

Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

2017-05-01

We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

Science.gov (United States)

Lu, L. W.; So, C. K.; Zhu, C. Y.; Gu, Q. L.; Li, C. J.; Fung, S.; Brauer, G.; Anwand, W.; Skorupa, W.; Ling, C. C.

2008-09-01

The resistivity of hydrothermally grown ZnO single crystals increased from ~103 Ω cm to ~106 Ω cm after 1.8 MeV electron irradiation with a fluence of ~1016 cm-2, and to ~109 Ω cm as the fluence increased to ~1018 cm-2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 1018 cm-2, the normalized TSC signal increased by a factor of ~100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

2016-07-15

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

International Nuclear Information System (INIS)

Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

2016-01-01

High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices. (paper)

Influence of UV Photo-Transfer on Post Irradiated Double Sulphate Poly-Crystals By Gamma And X-rays

International Nuclear Information System (INIS)

El-kolaly, M.A.

2000-01-01

Solid state thermoluminescence (TL) dosimetry has for many years been the pre-eminent method for quantifying ionizing radiation dose. In this work, thermoluminescence characteristics of the double sulphate (Li Cs So 4 ) poly-crystals have been studied after exposure to different doses from X and gamma radiation. The glue curves showed TL response of three peaks at 75,125,250 degree. The structure of the glue peaks due to X-rays is quite different from that due to gamma rays. UV exposure yields a regeneration of the TL peaks for the post irradiated samples for X or gamma radiation with some changes in the peaks structure especially the third peak. For the post X-ray irradiated crystals, the area under the third glow peak (III) increased linearly with the integrated time of UV exposures till about 30 min. after which no changes were observed; while , for the post gamma-irradiated crystals two linear regions were observed

Study of thermochemically reduced and electron-irradiated LiNbO3 single crystals by positron annihilation and optical absorption measurements

International Nuclear Information System (INIS)

Pareja, R.; Gonzalez, R.; Pedrosa, M.A.

1984-01-01

Irradiation of LiNbO 3 single crystals using Van de Graaff electrons with an energy of 1.5 MeV introduces an optical absorption band similar to that observed in thermochemically reduced samples. As-grown, reduced, or irradiated crystals show single-component positron lifetime spectra with an average decay time of 234 ps. (author)

Features of the structural states of KNbO{sub 3} single crystals before and after fast-neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Stash, A. I., E-mail: astas@yandex.ru; Ivanov, S. A.; Stefanovich, S. Yu.; Mosunov, A. V.; Boyko, V. M.; Ermakov, V. S.; Korulin, A. V.; Kalyukanov, A. I. [State Scientific Center of the Russian Federation Karpov Institute of Physical Chemistry (Russian Federation)

2017-01-15

Neutron irradiation is a unique tool for forming new structural states of ferroelectrics, which cannot be obtained by conventional methods. The inf luence of the irradiation by two doses of fast neutrons (F = 1 × 10{sup 17} and 3 × 10{sup 17} cm{sup –2}) on the structure and properties of KNbO{sub 3} single crystals has been considered for the first time. The developed method for taking into account the experimental correction to the diffuse scattering has been used to analyze the structural changes occurring in KNbO{sub 3} samples at T = 295 K and their correlations with the behavior of dielectric and nonlinear optical characteristics. The irradiation to the aforementioned doses retains the KNbO{sub 3} polar structure, shifting Т{sub Ð}¡ to lower temperatures and significantly affecting only the thermal parameters and microstructure of single crystals. Neutron irradiation with small atomic displacements provides a structure similar to the high-temperature modification of an unirradiated KNbO{sub 3} crystal.

Mechanoluminescence by impulsive deformation of γ-irradiated Er-doped CaF2 crystals

International Nuclear Information System (INIS)

Brahme, Nameeta; Shukla, Manju; Bisen, D.P.; Kurrey, U.; Choubey, Anil; Kher, R.S.; Singh, Manisha

2011-01-01

An impulsive technique has been used for mechanoluminescence (ML) measurements in γ-irradiated Er doped CaF 2 crystals. When the ML is excited impulsively by the impact of moving piston on to γ-irradiated CaF 2 :Er crystals, two peaks are observed in ML intensity with time and it is seen that the peak intensities of first and second peaks (I m1 and I m2 ) increase with increasing impact velocity. However the time corresponding to first and second peaks (t m1 and t m2 ) shifts towards shorter time values with increasing impact velocity. It is also seen that the total ML intensity I Total initially increases with the impact velocity and then it attains a saturation value for higher values of the impact velocity. We have presented a theoretical explanation for the observed results. - Research highlights: → Impulsive technique has been used for mechanoluminescence (ML) studies in γ-irradiated Er doped CaF 2 crystals. → ML intensity exhibited two peaks with time (I m1 and I m2 ), where the intensity of both the peaks increased with increasing impact velocity. → The time of occurrence of the peaks (t m1 and t m2 ) reduced with increasing the impact velocity. → Total ML intensity (I Total ) first increases and then attains a saturation value with an increment in the impact velocity. → A theoretical explanation is presented to the observed results.

Effects of gamma ray irradiation on the struvite crystallization of livestock wastewater

International Nuclear Information System (INIS)

Yoo, Byeong Hak; Jo, Seong Hui; Lee, Myun Joo; Kim, Tak Hyun

2010-01-01

The struvite crystallization was applied to remove NH 4 + in livestock wastewater. The ammonium ions can be very toxic to the aquatic creatures. In this experiments, the livestock wastewater from Gongju livestock wastewater treatment plant was used. The behaviors of various parameters such as pH, mole ratio of Mg 2+ : NH 4 + : PO 4 3- and reaction temperature for struvite crystallization of livestock wastewater and the effect of gamma ray irradiation were evaluated. As results, for the pH variation, the NH 4 + removal efficiency showed the highest, 88%, at pH 9 ∼ 9.25. The removal efficiency of NH 4 + , Mg 2+ and PO 4 3- was showed highest when same molar ratio of Mg 2+ and PO 4 3- were applied. The NH 4 + removal efficiency showed 82% at 7 .deg. C, and 90% at 30 .deg. C, with temperature. When the wastewater was irradiated with 20 kGy of gamma ray, NH 4 + was removed as much as 83%

Inhomogeneous strain induced by fast neutron irradiation in NaKSO/sub 4/ crystals

Energy Technology Data Exchange (ETDEWEB)

Kandil, S.H.; Kassem, M.E.; El-Khatib, A.; El-Gamal, M.A.; El-Wahidy, E.F.

1987-11-01

The paper reports the effect of fast neutron irradiation on the thermal properties of NaKSO/sub 4/ crystals in the temperature range 400-475 K. Results are presented for the thermal expansion, tensile strain and specific heat of NaKSO/sub 4/, as a function of neutron irradiation dose. All these results revealed an inhomogeneous strain induced by the radiation. It is suggested that this induced inhomogeneous strain could be used to detect neutron exposure doses.

Development of a neutron irradiation device with a cooled crystal filter: Radiation physical properties and applications in in vivo irradiations

International Nuclear Information System (INIS)

Braetter, P.; Galinke, E.; Gatschke, W.; Gawlik, D.; Roesick, U.

1979-01-01

The radiation-physical and geometrical properties of a neutron-beam, collimated with a Bi-crystal filter were investigated at the reactor BER II. The influence of the crystal temperature as well as the actions of a reflector and a collimator on neutron flux-density and neutron field of the thermal neutrons were investigated. The dose contributions of the thermal, epithermal and fast neutrons as well as γ-radiation was determined by activation of the sample respective with TLD-measurements. The influence of irradiation and measurement geometry on the sensitivity and detection probability was investigated by means of phantom irradiations. The method prooved to be suitable, to detect changes of the Ca-content in a rat hind leg by about 10%. In investigations on animal groups of about 10 animals a threshold of detectability for changes of the ca-content is to be expected by about 4%. In a further group experiment it was found, that even in the case of multiple radiation the procedure of irradiation and measurement was not followed by a significant change in the Ca-content of the hind legs of the testing animals. (orig.) [de

The melting and crystallization behavior of irradiated poly(1-butene)

International Nuclear Information System (INIS)

Markovic, V.; Silverman, J.

1982-01-01

Isotactic poly(1-butene) samples were melted and crystallized. This treatment leaves the polymer in the unstable crystalline form, known as Modification II. The transformation to stable Modification I normally has a half life of 1 day. Samples were irradiated within 30 min after crystallization with high doses of electrons delivered in intervals up to a few minutes. This permitted measurements of radiation effects on Modification II under circumstances where the II-I crystal transformation was negligibly small. Similar measurements were performed on stable Modification I, which was obtained by waiting for the completion of the II-I transformation; for this stable crystalline form, relatively low dose rate γ-exposures serve as well as high dose rate electron beams in measuring radiation effects. DSC and IR absorption measurements were performed. The effect of radiation on the fusion endotherms, melting points, IR spectra, and some aspects of the kinetics of crystalline transformation are presented. (author)

Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals

International Nuclear Information System (INIS)

Pagava, T. A.

2006-01-01

The n-Si single crystals are studied in order to gain insight into the effect of the temperature of irradiation T irr on the defect-production process. The samples under study were irradiated with 2-MeV electrons in the range T irr = 20-400 deg. C. Irradiated crystals were annealed isochronously in the temperature range from 80 to 600 deg. C. Measurements were carried out by the Hall method in the temperature range from 77 to 300 K. It is shown that the efficiency of introduction of radiation defects with a high thermal stability (T ann ≥ 350 deg. C) attains a maximum at T irr = 150 deg. C. The observed effect is accounted for by formation of multivacancy defects PV 2 on the basis of ionized E centers and nonequilibrium vacancies

Semipolar GaN grown on m-plane sapphire using MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

2008-07-01

We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

EPR studies of gamma-irradiated taurine single crystals

Energy Technology Data Exchange (ETDEWEB)

Bulut, A. E-mail: abulut@samsun.omu.edu.tr; Karabulut, B.; Tapramaz, R.; Koeksal, F

2000-04-01

An EPR study of gamma-irradiated taurine [C{sub 2}H{sub 7}NO{sub 3}S] single crystal was carried out at room temperature. The EPR spectra were recorded in the three at mutually perpendicular planes. There are two magnetically distinct sites in monoclinic lattice. The principle values of g and hyperfine constants for both sites were calculated. The results have indicated the presence of {sup 32}SO{sup -}{sub 2} and {sup 33}SO{sup -}{sub 2} radicals. The hyperfine values of {sup 33}SO{sup -}{sub 2} radical were used to obtain O-S-O bond angle for both sites.

Optical and structural behaviour of Mn implanted sapphire

International Nuclear Information System (INIS)

Marques, C.; Franco, N.; Kozanecki, A.; Silva, R.C. da; Alves, E.

2006-01-01

Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 x 10 17 cm -2 . The samples were annealed at 1000 deg. C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 x 10 16 cm -2 , as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl 2 O 4 . On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission

Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

Energy Technology Data Exchange (ETDEWEB)

Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

2014-09-30

This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

Science.gov (United States)

Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

2018-04-01

Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

International Nuclear Information System (INIS)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-01-01

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Science.gov (United States)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-12-01

Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

Energy Technology Data Exchange (ETDEWEB)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

2005-02-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

International Nuclear Information System (INIS)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

2005-01-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.

Science.gov (United States)

Deng, Bing; Pang, Zhenqian; Chen, Shulin; Li, Xin; Meng, Caixia; Li, Jiayu; Liu, Mengxi; Wu, Juanxia; Qi, Yue; Dang, Wenhui; Yang, Hao; Zhang, Yanfeng; Zhang, Jin; Kang, Ning; Xu, Hongqi; Fu, Qiang; Qiu, Xiaohui; Gao, Peng; Wei, Yujie; Liu, Zhongfan; Peng, Hailin

2017-12-26

Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

Institute of Scientific and Technical Information of China (English)

Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

2007-01-01

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

Science.gov (United States)

Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

2017-09-01

Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

Antiphase inversion domains in lithium cobaltite thin films deposited on single-crystal sapphire substrates

International Nuclear Information System (INIS)

Zheng, S.J.; Fisher, C.A.J.; Hitosugi, T.; Kumatani, A.; Shiraki, S.; Ikuhara, Y.H.; Kuwabara, A.; Moriwake, H.; Oki, H.; Ikuhara, Y.

2013-01-01

Antiphase inversion domains in LiCoO 2 thin films prepared by pulsed laser deposition on sapphire single-crystal substrates are analyzed using a combination of (scanning) transmission electron microscopy and first-principles calculations. Domains form epitaxially on the substrates with orientation relationships of [112 ¯ 0] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 and [1 ¯ 1 ¯ 20] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 . In addition, substrate/film interfaces with the above orientation relationships always have the same stacking sequence of Al–O–Co–O–Li–O. This is confirmed to be the most energetically stable stacking arrangement according to first-principles calculations. Individual domains form as a result of steps one (0 0 0 1) O–Al–O spacing in height on the otherwise flat substrate surface. Because the orientation of adjacent (0 0 0 1) AlO 6 octahedra in Al 2 O 3 are rotated by 180°, while LiO 6 and CoO 6 octahedra in LiCoO 2 are all aligned in the same direction, substrate steps produce LiCoO 2 domains rotated 180° relative to their neighbors. The similar size of oxygen octahedra in the two materials also means that the step height is close to the layer spacing in LiCoO 2 , so that (0 0 0 1) Li and Co layers of adjacent domains are shifted by one layer relative to each other at each domain boundary, aligning Li layers with Co layers across the boundary. The combination of these two effects generates antiphase inversion domains. The domain boundaries effectively sever Li-ion diffusion pathways in the (0 0 0 1) planes between domains and thus are expected to have a detrimental effect on Li-ion conductivity

Interfacial reactions between sapphire and Ag–Cu–Ti-based active braze alloys

International Nuclear Information System (INIS)

Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

2016-01-01

The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and sapphire have been studied. In separate experiments, Ag–35.3Cu–1.8Ti wt.% and Ag–26.7Cu–4.5Ti wt.% alloys have been sandwiched between pieces of R-plane orientated sapphire and heated in argon to temperatures between 750 and 900 °C for 1 min. The phases at the Ag–Cu–Ti/sapphire interfaces have been studied using selected area electron diffraction, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Gradual and subtle changes at the Ag–Cu–Ti/sapphire interfaces were observed as a function of temperature, along with the formation of a transient phase that permitted wetting of the sapphire. Unequivocal evidence is shown that when the active braze alloys melt, titanium first migrates to the sapphire and reacts to dissolve up to ∼33 at.% oxygen, forming a nanometre-size polycrystalline layer with a chemical composition of Ti 2 O 1–x (x ≪ 1). Ti 3 Cu 3 O particles subsequently nucleate behind the Ti 2 O 1–x layer and grow to become a continuous micrometre-size layer, replacing the Ti 2 O 1–x layer. Finally at 845 °C, a nanometre-size γ-TiO layer forms on the sapphire to leave a typical interfacial structure of Ag–Cu/Ti 3 Cu 3 O/γ-TiO/sapphire consistent with that seen in samples of polycrystalline alumina joined to itself with these active braze alloys. These experimental observations have been used to establish a definitive bonding mechanism for the joining of sapphire with Ag–Cu alloys activated by small amounts of titanium.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Energy Technology Data Exchange (ETDEWEB)

Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

2015-12-15

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Dosimetric characteristics of aqueous solution of crystal violet for applications in food irradiation

Energy Technology Data Exchange (ETDEWEB)

Khan, H M; Naz, Shagufta; Tabassum, Safia [Peshawar University, Peshawar (Pakistan). Radiation Chemistry Laboratory, National Centre of Excellence in Physical Chemistry

2011-07-15

Aqueous solution of crystal violet has been evaluated spectrophotometrically as a gamma-ray chemical dosimeter. The response of the chemical dosimetric system has also been investigated under different environmental conditions, such as light and temperature. In the present study the response has been measured at two wavelengths; 588 nm ({lambda}{sub max} of the irradiated solution) and 500 nm. The response of the crystal violet dosimeter was linear in the dose range of 50-550 Gy at pH 5.6 when absorption measurements were made at 588 and 500 nm. The response of the crystal violet dosimeter during post-irradiation storage at room temperature in dark showed slight decrease in absorbance at 588 and 510 nm but the response was almost stable at 460 nm. For higher doses, the change in the response was greater as compared to the low doses. Post-irradiation stability during diffused sunlight showed significant decrease in the response for higher dose at 588 and 510 nm and slower decrease in the response for lower dose at the above mentioned wavelengths. However the response was almost stable up to 97 days at 460 nm for higher and lower doses. At 4 deg C, the decrease in the absorbance was slower at 588 and 510 nm while the response was almost constant at 460 nm. At higher temperatures, such as 40 deg C, the decrease in the absorbance was greater at 588 and 510 nm while at 460 nm the absorbance was almost constant for about 3 months. (author)

Dosimetric characteristics of aqueous solution of crystal violet for applications in food irradiation

International Nuclear Information System (INIS)

Khan, H.M.; Shagufta Naz; Safia Tabassum

2011-01-01

Aqueous solution of crystal violet has been evaluated spectrophotometrically as a gamma-ray chemical dosimeter. The response of the chemical dosimetric system has also been investigated under different environmental conditions, such as light and temperature. In the present study the response has been measured at two wavelengths; 588 nm (λ max of the irradiated solution) and 500 nm. The response of the crystal violet dosimeter was linear in the dose range of 50-550 Gy at pH 5.6 when absorption measurements were made at 588 and 500 nm. The response of the crystal violet dosimeter during post-irradiation storage at room temperature in dark showed slight decrease in absorbance at 588 and 510 nm but the response was almost stable at 460 nm. For higher doses, the change in the response was greater as compared to the low doses. Post-irradiation stability during diffused sunlight showed significant decrease in the response for higher dose at 588 and 510 nm and slower decrease in the response for lower dose at the above mentioned wavelengths. However the response was almost stable up to 97 days at 460 nm for higher and lower doses. At 4 deg C, the decrease in the absorbance was slower at 588 and 510 nm while the response was almost constant at 460 nm. At higher temperatures, such as 40 deg C, the decrease in the absorbance was greater at 588 and 510 nm while at 460 nm the absorbance was almost constant for about 3 months. (author)

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

International Nuclear Information System (INIS)

Lu, L W; So, C K; Zhu, C Y; Gu, Q L; Fung, S; Ling, C C; Li, C J; Brauer, G; Anwand, W; Skorupa, W

2008-01-01

The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 Ω cm to ∼10 6 Ω cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm −2 , and to ∼10 9 Ω cm as the fluence increased to ∼10 18 cm −2 . Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10 18 cm −2 , the normalized TSC signal increased by a factor of ∼100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed

Conversion of alkyl radicals to allyl radicals in irradiated single crystal mats of polyethylene

International Nuclear Information System (INIS)

Fujimura, T.; Hayakawa, N.; Kuriyama, I.

1978-01-01

The decay of alkyl radicals, the conversion of alkyl radicals to allyl radicals and the trapping of allyl radicals in irradiated single crystal mats of polyethylene have been studied by electron spin resonance (e.s.r.). It has been suggested that in the crystal core alkyl radicals react with trans-vinylene double bonds and are converted into trans-vinylene allyl radicals; at the crystal surface, alkyl radicals react with vinyl end groups and are converted into allyl radicals with vinyl end groups. The decay of radical pairs and the formation of trans-vinylene double bonds are discussed. (author)

Ti:Sapphire waveguide lasers

NARCIS (Netherlands)

Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

2007-01-01

Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

Reliability improvement methods for sapphire fiber temperature sensors

Science.gov (United States)

Schietinger, C.; Adams, B.

1991-08-01

Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

Science.gov (United States)

Pisciotta, B. P.; Gross, C.

1976-01-01

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Effect of irradiation temperature on crystallization of {alpha}-Fe induced by He irradiations in Fe{sub 80}B{sub 20} amorphous alloy

Energy Technology Data Exchange (ETDEWEB)

San-noo, Toshimasa; Toriyama, Tamotsu; Wakabayashi, Hidehiko; Iijima, Hiroshi [Musashi Inst. of Tech., Tokyo (Japan); Hayashi, Nobuyuki; Sakamoto, Isao

1997-03-01

Since amorphous alloys are generally highly resistant to irradiation and their critical radiation dose is an order of magnitude higher for Fe-B amorphous alloy than Mo-methods, these alloys are expected to become applicable as for fusion reactor materials. The authors investigated {alpha}-Fe crystallization in an amorphous alloy, Fe{sub 80}B{sub 20} using internal conversion electron Moessbauer spectroscopy. The amount of {alpha}-Fe component was found to increase by raising the He-irradiation dose. The target part was modified to enable He ion radiation at a lower temperature (below 400 K) by cooling with Peltier element. Fe{sub 80}B{sub 20} amorphous alloy was cooled to keep the temperature at 300 K and exposed to 40 keV He ion at 1-3 x 10{sup 8} ions/cm{sup 2}. The amount of {alpha}-Fe crystal in each sample was determined. The crystal formation was not observed for He ion radiation below 2 x 10{sup 18} ions/cm{sup 2}, but that at 3 x 10{sup 8} ions/ cm{sup 2} produced a new phase ({delta} +0.40 mm/sec, {Delta} = 0.89 mm/sec). The decrease in the radiation temperature from 430 to 300 K resulted to extremely repress the production of {alpha}-Fe crystal, suggesting that the crystallization induced by He-radiation cascade is highly depending on the radiation temperature. (M.N.)

An investigation on the effect of gamma-irradiation on the optical absorption spectra in Cu(II) doped ammonium Tetrachlorozincate (ATZC) single crystals

International Nuclear Information System (INIS)

Abu El-Fadl, A.; Mohamad, G.A.; Abd El-Sttar, M.

2003-01-01

Optical transmittance measurements were carried out on Ammonium tetrachlorozincate (ATZC) crystals doped with small concentrations of Cu 2+ ions and irradiated with different doses of gamma-radiation. The absorption coefficient (alpha) and the extinction coefficient (K) of unirradiated and irradiated ATZC crystals were calculated. Valued of the allowed indirect optical energy gap (E g ) of ATZC were calculated as a function of gamma-dose. The effect of gamma irradiation is to increase in the absorption coefficient value and to decrease in E g value. The results could be explained in the fact that gamma irradiation produces defects of ionizing type because of internal irradiation with photon or Compton electrons

Structural changes in the crystal-amorphous interface of isotactic polypropylene film induced by annealing and γ-irradiation

International Nuclear Information System (INIS)

Nishimoto, Sei-ichi; Seike, Hideo; Chaisupakitsin, M.; Yoshii, Fumio; Makuuchi, Keizo.

1995-01-01

Annealing and radiation effects on the microstructures of isotactic polypropylenes, homopolymer and ethylene (<2.3 wt%) incorporated random copolymers, in the solid state were studied to get mechanistic insight into the modification and degradation of mechanical properties. The growth of helical conformation of isotactic chains in the crystal-amorphous interface was induced to greater extent by γ-irradiation, while the transition from smectic to monoclinic modifications in the crystal phase occurred simultaneously by annealing. The yield stress of the polypropylene films increased with the increased content of helical conformation as the result of annealing and/or γ-irradiation. (author)

Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

Science.gov (United States)

Liu, Y.; Crespillo, M. L.; Huang, Q.; Wang, T. J.; Liu, P.; Wang, X. L.

2017-02-01

As one of the representative ABO3 perovskite-structured oxides, lanthanum aluminate (LaAlO3) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO3-based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided-mode measurement and

Neutron irradiation damage in Al2O3 and Y2O3

International Nuclear Information System (INIS)

Clinard, F.W. Jr.; Bunch, J.M.; Ranken, W.A.

1975-01-01

Two ceramics under consideration for use in fusion reactors, Al 2 O 3 and Y 2 O 3 , were irradiated in the EBR-II fission reactor at 650, 875, and 1025 0 K to fluences between 2 and 6 x 10 21 n/cm 2 (E greater than 0.1 MeV). Samples evaluated include sapphire, Lucalox, alumina, Y 2 O 3 , and Y 2 O 3 -10 percent ZrO 2 (Yttralox). All Al 2 O 3 specimens swelled significantly (1 to 3 percent), with most of the growth observed in sapphire along the c-axis at the higher temperatures. Al 2 O 3 samples irradiated at 875 to 1025 0 K contained a high density of small aligned ''pores''. Irradiated Y 2 O 3 -based ceramics exhibited dimensional stability and a defect content consisting primarily of unresolved damage and/or dislocation loops. The behavior of these ceramics under irradiation is discussed, and the relevance of fission neutron damage studies to fusion reactor applications is considered. (auth)

Nonlinearity Mechanism and Correction of Sapphire Fiber Temperature Sensor on Blackbody Cavity

Directory of Open Access Journals (Sweden)

Tiejun Cao

2014-06-01

Full Text Available Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stability of the sensor. In order to solve the nonlinear problems which exist in the measurement, at first, the sapphire fiber optic temperature sensor temperature measurement principle and nonlinear generation mechanism are studied; secondly piecewise linear interpolation and spline interpolation linearization algorithm is designed with combining the nonlinear characteristics of sapphire optical fiber temperature sensor, and the program is designed on its linear and associated signal processing. Experimental results show that a good linearization of sapphire fiber optic temperature sensor can been achieved in this method.

'Sapphire' project. Objectives and outcomes

International Nuclear Information System (INIS)

Shkolnik, V.S.

1997-01-01

'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

Pulsed EPR study of low-dose irradiation effects in L-alanine crystals irradiated with γ-rays, Ne and Si ion beams

International Nuclear Information System (INIS)

Rakvin, B.; Maltar-Strmecki, N.; Nakagawa, K.

2007-01-01

Low-dose irradiation effects in L-alanine single crystals irradiated with γ-rays, Ne and Si ion beams have been investigated by means of a two-pulse electron spin echo (ESE) technique. An effective phase memory time, T M , was measured from the first stable L-alanine radical, SAR1, and its complex relaxation mechanism is discussed. Both spectral and instantaneous diffusion contributions to the total effective relaxation rate have been extrapolated through the detection of the two-pulse ESE signal as a function of turning angle. The local microscopic concentration of paramagnetic centers C(ions)/C(γ-ray) for low-dose heavy-ion irradiation has been deduced from the corresponding spin-spin interaction

Crystal growth in EPDM by chemi-crystallisation as a function of the neutron irradiation dose and flux level

International Nuclear Information System (INIS)

Lambri, O.A.; Salvatierra, L.M.; Sanchez, F.A.; Matteo, C.L.; Sorichetti, P.A.; Celauro, C.A.

2005-01-01

Neutron irradiation at room temperature were performed on EPDM (ethylene-propylene-diene monomer) in two different nuclear reactors at different fluxes. The effect of the irradiation on the chain arrangement in the polymer, as a function of the dose is discussed. Different crystal concentrations and crystal shapes, developed by chemi-crystallisation, are obtained depending on the neutron dose. In addition the radiation damage degree in the polymer depends both on the dose and the flux level. Dynamical mechanical analysis, swelling studies, X-ray diffraction, differential thermal analysis and infrared studies were employed as experimental techniques

Optimizing Ti:Sapphire laser for quantitative biomedical imaging

Science.gov (United States)

James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

2018-02-01

Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

Resistance to {gamma} irradiation of LaBr{sub 3}:Ce and LaCl{sub 3}:Ce single crystals

Energy Technology Data Exchange (ETDEWEB)

Normand, S. [CEA-Recherche Technologique, DETECS/SSTM CE Saclay F-91191 Gif Sur Yvette Cedex (France)]. E-mail: stephane.normand@cea.fr; Iltis, A. [Saint-Gobain Crystals, 104 Route de Larchant, 77140 St Pierre les Nemours (France); Bernard, F. [Saint-Gobain Crystals, 104 Route de Larchant, 77140 St Pierre les Nemours (France); Domenech, T. [CEA-Recherche Technologique, DETECS/SSTM CE Saclay F-91191 Gif Sur Yvette Cedex (France); Delacour, P. [CEA-Recherche Technologique, DETECS/SSTM CE Saclay F-91191 Gif Sur Yvette Cedex (France)

2007-03-11

LaBr{sub 3}:Ce (Brillance 380) and LaCl{sub 3}:Ce (Brillance 350) both exhibit a very good energy resolution and energy linearity response. They are also more sensitive to {gamma}-rays than NaI(Tl) detectors, due to their higher density. The aim of this work is to determine the behaviour of those new single crystals in comparison with NaI(Tl) under severe {gamma}-ray irradiation. Therefore we have irradiated three 25 by 25 mm cylinder crystals encapsulated in air-tight aluminium housing with {sup 60}Co beam. Crystals were tested as stand-alone material not to test the impact of radiation to our photomultiplier tube (PMT). Only encapsulated crystals (alone, without PMTs) were irradiated during several periods to achieve the final 3.4 kGy integrated dose. Intermediate measurements of {sup 137}Cs spectrum were done in order to evaluate the impact of the dose on the studied crystal performances. The radiation hardness of LaBr{sub 3}:Ce and LaCl{sub 3}:Ce was then compared to NaI(Tl). We show in this paper that up to 3.4 kGy no permanent modification of the energy resolution nor colour change is observed for LaBr{sub 3}:Ce and LaCl{sub 3}:Ce crystals. The light output also seems quite stable. This is in stark contrast with the behaviour of NaI:Tl which exhibits continuously decreasing light output, colour change and worsening of energy resolution for doses above 5 Gy.

Positron states and nanoobjects in proton-irradiated quartz single crystals: Positronium atom in quartz

International Nuclear Information System (INIS)

Grafutin, V. I.; Zaluzhnyi, A. G.; Timoshenkov, S. P.; Britkov, O. M.; Ilyukhina, O. V.; Myasishcheva, G. G.; Prokop'ev, E. P.; Funtikov, Yu. V.

2008-01-01

The influence of proton bombardment and metal atom impurities on the structure of quartz single crystals has been studied. The related defects have been studied using positron annihilation spectroscopy (angular correlation of positron-annihilation photons), acoustic absorption, and optical absorption measurements. It is shown that the presence of a narrow component f in the angular distribution of annihilation photons (ADAP), which is related to the formation of parapositronium, determines a high sensitivity of this method with respect to features of the crystal structure of quartz. It is established that the defectness of the structure of irradiated quartz crystals can be characterized by the ratio f/f 0 of the relative intensities of narrow components in the ADAP curves measured before (f 0 ) and after (f) irradiation. Any process leading to a decrease in the probability of positronium formation (e.g., positron loss as a result of the trapping on defects and the interaction with impurity atoms and lattice distortions) decreases the intensity of the narrow component. Based on the ADAP data, estimates of the radii and concentrations of nanodefects in quartz have been obtained and their variation upon annealing at temperatures up to T = 873 K has been studied

Evidence for shallow positron traps in a neutron-irradiated Al single crystal

International Nuclear Information System (INIS)

Schultz, P.J.; MacKenzie, I.K.; Lynn, K.G.; West, R.N.; Snead, C.L. Jr.

1982-01-01

Variable energy positrons have been used to determine the dependence on temperature of positron diffusion out of a neutron-irradiated single crystal of Al. The results are interpreted in the context of a one-dimensional diffusion model which includes bulk annihilations as well as trapping at voids and other microstructural defects in the bulk material by way of a removal rate kappa/sub eff/ of freely diffusing positrons. The data show a strongly negative dependence on temperature below 125 0 K for kappa/sub eff/, indicating the presence of some additional phenomenon which we attribute to positron localization in shallow, presumably radiation-induced, traps in the crystal

Effect of dislocations of forest on relaxation of mechanical stresses in irradiated zinc crystals

International Nuclear Information System (INIS)

Troitskij, O.A.; Kalymbetov, P.U.; Kusainov, S.G.; Shambulov, N.B.

1988-01-01

Effect of forest dislocations on the value of electron-plastic effect (EPE) in zinc crystals during their irradiation by accelerated electron packets is investigated. The following mechanical parameters are determined experimentally: total relaxation of voltages Δσ for 180s; change in reforming voltage Δσpl in single pulses of irradiation on the slope and bottom of relaxation curves. The results obtained testify to the effectiveness of forest dislocations as surmountable obstacles for the dislocations shiding in the basis plane

Effect of UV on the post irradiated Li Cs S O{sub 4} crystal by X and gamma radiation. Vol. 2

Energy Technology Data Exchange (ETDEWEB)

Kassem, M E [On Leave, Alexandria University, Faculty of Science, PHysics Department. Alexandria (Egypt); EL-Kolaly, M A [On Leave, Radiation Protection Department, Nuclear Research Center, Atomic Energy Authority, Cairo (Egypt); Al-Houty, L I [University of Qatar, Faculty of Science, Department of Physics, P.O. Box 2713, Doha (Qatar)

1996-03-01

Thermoluminescence characteristics of Li Cs S O{sub 4} crystal have been studied after exposure to different doses of X and Gamma-Radiations. The glow curves showed TL response of Three peaks at 75,125 and 250 degree C. The structure of the glow peaks due to X-rays is quite different from that due to gamma-rays. UV exposure yields regeneration of the TL peaks for the post irradiated samples with X or Gamma-radiation with some changes in the peaks`s structure especially the third peak. For the post X-ray irradiated crystals, the area under the third glow peak (PK III) increased with integrated time of UV exposure till about 30 min after which no changes were observed; while, for the post gamma-irradiated crystals, two linear regions were observed. The models of the TL response for the post irradiated samples as a result to UV are discussed. 5 figs.

Factors affecting color strength of printing on film-coated tablets by UV laser irradiation: TiO2 particle size, crystal structure, or concentration in the film, and the irradiated UV laser power.

Science.gov (United States)

Hosokawa, Akihiro; Kato, Yoshiteru

2011-08-01

The purpose of this article is to study factors affecting color strength of printing on film-coated tablets by ultraviolet (UV) laser irradiation: particle size, crystal structure, or concentration of titanium dioxide (TiO2) in film, and irradiated UV laser power. Hydroxypropylmethylcellulose films containing 4.0% of TiO2, of which BET particle sizes were ranging from 126.1 to 219.8 nm, were irradiated 3.14W of UV laser at a wavelength 355 nm to study effects of TiO2 particle size and crystal structure on the printing. The films containing TiO2 concentration ranging from 1.0 to 7.7% were irradiated 3.14 or 5.39W of the UV laser to study effect of TiO2 concentration on the printing. The film containing 4.0% of TiO2, was irradiated the UV laser up to 6.42W to study effect of the UV laser power on the printing. The color strength of the printed films was estimated by a spectrophotometer as total color difference (dE). Particle size, crystal structure, and concentration of TiO2 in the films did not affect the printing. In the relationship between the irradiated UV laser power and dE, there found an inflection point (1.6W). When the UV laser power was below 1.6W, the films were not printed. When it was beyond the point, total color difference increased linearly in proportion with the irradiated laser power. The color strength of the printing on film was not changed by TiO2 particle size, crystal structure, and concentration, but could be controlled by regulating the irradiated UV laser power beyond the inflection point.

Irradiation damage in aluminium single crystals produced by 50-keV aluminium and copper ions

DEFF Research Database (Denmark)

Henriksen, L.; Johansen, A.; Koch, J.

1968-01-01

Aluminium single crystals, thin enough to be examined by electron microscopy, have been irradiated with 50-keV aluminium and copper ions. The irradiation fluxes were in the range 1011–1014 cm−2 s−1 and the doses were from 6 × 1012 to 6 × 1014 cm−2. Irradiation along either a or a direction produces...... rows of dislocation loops all lying parallel to one particular direction. If the aluminium target is quenched from 600 °C and annealed at room temperature prior to irradiation with aluminium ions, the rows of loops are suppressed. The amount of damage observed is considerably less than would...

Optical absorption of BaF2 crystals with different prehistory when irradiated by high-energy electrons

International Nuclear Information System (INIS)

Chinkov, E P; Stepanov, S A; Shtan'ko, V F; Ivanova, T S

2016-01-01

The spectra of stable optical absorption of BaF 2 crystals containing uncontrollable impurities after irradiation with 3 MeV electrons are studied at room temperature. The dependence of the efficiency of stable color accumulation in the region of emerging crossluminescence on the absorption coefficients measured near the fundamental absorption edge in unirradiated crystals of various prehistory is traced. (paper)

Oxidation states of Fe and Ti in blue sapphire

International Nuclear Information System (INIS)

Wongrawang, P; Wongkokua, W; Monarumit, N; Thammajak, N; Wathanakul, P

2016-01-01

X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe 2+ and Ti 4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe 3+ state; and Ti at 4984 eV, corresponding to Ti 4+ . From these results, we propose Fe 3+ -Ti 4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV–vis absorption spectra, to describe the cause of the color of blue sapphire. (paper)

ESR-ENDOR study of x-irradiated single crystals of α.D.glucopyranose and α-methyl.D.glucopyranoside; environmental effects upon radiation and free radical chemistry in carbohydrate model systems

International Nuclear Information System (INIS)

Madden, K.P.

1980-01-01

Single crystals of x-irradiated α-D-glucopyranose (αGlu) and α-methyl-D-glucopyranoside (αMeGlu) were studied using electron spin resonance and electron nuclear double resonance spectroscopy, to determine products and reaction mechanisms in carbohydrate radiation and free-radical chemistry. Four free-radical products were identified in αMeGlu single crystals irradiated and studied at 77K. Irradiation and observation at 12K produced yet another species. Four free radicals were identified in αGlu single crystals irradiated and observed at 12K and 77K. Free radical reaction in αGlu and αMeGlu were induced by slowly warming crystals irradiated at 77K until conversion occurred. Environmental influences upon these free-radical reaction mechanisms are discussed. The results from previous work on irradiated aqueous glasses of αGlu is briefly reviewed, and compared to those obtained from the single crystal system

Comprehensive studies on irradiated single-crystal diamond sensors

Energy Technology Data Exchange (ETDEWEB)

Stegler, Martin [DESY, Zeuthen (Germany)

2015-07-01

Single-crystal diamond sensors are used as part of the Beam and Radiation Instrumentation and Luminosity (BRIL) projects of the CMS experiment. Due to an upgrade of the Fast Beam Conditions Monitor (BCM1F) these diamond sensors are exchanged and the irradiated ones are now used for comprehensive studies. Current over voltage (IV), current over time (CT) and charge collection efficiency (CCE) measurements were performed for a better understanding of the radiation damage incurred during operation and to compensate in the future. The effect of illumination with various light sources on the charge collection efficiency was investigated and led to interesting results. Intensity and wavelength of the light were varied for deeper insight of polarization effects.

Transfer of energy from irradiated crystals to redox reactions: iodide/bromate and nitrite/bromate systems

International Nuclear Information System (INIS)

Arnikar, H.J.; Madhava Rao, B.S.; Bedekar, M.J.

1978-01-01

Earlier it had been shown by the authors that some of the redox reactions, which do not take place at room temperature can be induced by γ radiation. The yields are proportional to the dose. Results reported here show that instead of direct irradiation, the energy stored in irradiated crystals in the form of F and hole centres can be available, in part, in effecting redox reactions. The mechanism of such an energy transfer is discussed with reference to reactions in the I - +BrO 3 - and NO 2 - +BrO 3 - systems due to the addition of irradiated NaCl. (author)

Electronic structure analysis of GaN films grown on r- and a-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2015-10-05

Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

Study and identification of paramagnetic centers by EPR technique in K3Cu(CN)4 crystals irradiated with X-rays

International Nuclear Information System (INIS)

Tancredo, A.

1984-01-01

Paramagnetic centers created in K 3 Cu(CN) 4 crystals by X-ray irradiation, using EPR technique are studied. The crystals are irradiated in following conditions: a) liquid nitrogen temperatures, b) room temperatures. Crystals field models of the paramagnetic centers which determine the following local symmetric in order to satisfy experimental results: a) Cu ++ in C sub(3v) symmetric and b) K 0 in distorted octahedral symmetry are proposed. The decay of these centers and the observation that Cu ++ ions are very much instable and disappear at T = 148K are studied. The K 0 atom remain up to T approximatelly 300K. (E.G.) [pt

DT fusion neutron irradiation of ORNL magnesium oxide crystals and BNL--LASL superconductor wires

International Nuclear Information System (INIS)

MacLean, S.C.

1978-01-01

The DT fusion neutron irradiation of two ORNL magnesium oxide crystals and eleven BNL-LASL superconductor wires is described. The sample position and neutron dose record are given. The maximum neutron fluence on any sample was 2.16 x 10 16 neutrons/cm 2

Fluorescence-based remote irradiation sensor in liquid-filled hollow-core photonic crystal fiber

Energy Technology Data Exchange (ETDEWEB)

Zeltner, R.; Russell, P. St.J. [Max Planck Institute for the Science of Light, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Department of Physics, University of Erlangen-Nuremberg, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Bykov, D. S.; Xie, S. [Max Planck Institute for the Science of Light, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Euser, T. G. [Max Planck Institute for the Science of Light, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2016-06-06

We report an irradiation sensor based on a fluorescent “flying particle” that is optically trapped and propelled inside the core of a water-filled hollow-core photonic crystal fiber. When the moving particle passes through an irradiated region, its emitted fluorescence is captured by guided modes of the fiber core and so can be monitored using a filtered photodiode placed at the fiber end. The particle speed and position can be precisely monitored using in-fiber Doppler velocimetry, allowing the irradiation profile to be measured to a spatial resolution of ∼10 μm. The spectral response can be readily adjusted by appropriate choice of particle material. Using dye-doped polystyrene particles, we demonstrate detection of green (532 nm) and ultraviolet (340 nm) light.

Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

International Nuclear Information System (INIS)

Liu, Y; Wang, T J; Liu, P; Wang, X L; Crespillo, M L; Huang, Q

2017-01-01

As one of the representative ABO 3 perovskite-structured oxides, lanthanum aluminate (LaAlO 3 ) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO 3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO 3 -based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO 3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO 3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO 3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO 3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided

Mechanical properties of low temperature proton irradiated single crystal copper

International Nuclear Information System (INIS)

Schildcrout, M.

1975-01-01

Single crystal copper samples, of varying degrees of cold work, were irradiated near either liquid helium or liquid nitrogen temperature by 10.1-MeV protons. The internal friction and dynamic Young's modulus were observed as a function of either temperature or integrated proton flux. The primary effect of irradiation was to produce dislocation pinning. The initial pinning rate was found to be very sensitive to cold work. During irradiation it was found that heavily cold worked samples (25 percent compression) exhibited, almost exclusively, exponential pinning given by Y = e/sup --lambda phi/. This is attributed to the immobilization, rather than shortening, of loop lengths and is characterized by the pinning constant lambda. Exponential pinning was also found, to a smaller degree, in less heavily cold worked samples. Cold work appears to reduce the ''effective volume'' within which the defect clusters produced by irradiation, can immobilize dislocation segments. The bulk effect was observed after dislocation pinning was completed. Expressed in terms of the fractional change in Young's modulus per unit concentration of irradiation induced defects, it was measured at liquid helium temperature to be --18.5 +- 3. An anelastic process occurring near 10 0 K for low kHz frequencies and due to stress-induced ordering of point defects produced by irradiation has also been studied. The peak height per unit fluence was found to decrease with increasing cold work. The peak was not observed in samples compressed 25 percent. For the most carefully handled sample the activation energy was (1.28 +- 0.05) x 10 -2 eV, the attempt frequency was 10/sup 11.6 +- .8/ s -1 , the shape factor was 0.20, and the half width of the peak was 11 percent larger than the theoretical value calculated from the Debye equation for a single relaxation process

Site location and optical properties of Eu implanted sapphire

International Nuclear Information System (INIS)

Marques, C.; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Silva, R.C. da; Alves, E.

2005-01-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 x 10 16 cm -2 . Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 deg. C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 deg. C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements

Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

International Nuclear Information System (INIS)

Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

1990-01-01

The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

International Nuclear Information System (INIS)

Zeng, Yong; Zhao, Yan; Jiang, Yijian

2015-01-01

Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

Science.gov (United States)

Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

1996-01-01

In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

The near-infrared waveguide properties of an LGS crystal formed by swift Kr8+ ion irradiation

Science.gov (United States)

Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian; Sun, Jian-Rong; Wang, Zhi-Guang; Wang, Xue-Lin

2013-11-01

In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr8+-ion implantation at a fluence of 1 × 1012 cm-2. The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr8+ ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light.

The near-infrared waveguide properties of an LGS crystal formed by swift Kr8+ ion irradiation

International Nuclear Information System (INIS)

Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian; Sun, Jian-Rong; Wang, Zhi-Guang; Wang, Xue-Lin

2013-01-01

In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr 8+ -ion implantation at a fluence of 1 × 10 12 cm −2 . The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr 8+ ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light

Self-organization processes and nanocluster formation in crystal lattices by low-energy ion irradiation

International Nuclear Information System (INIS)

Tereshko, I.; Abidzina, V.; Tereshko, A.; Glushchenko, V.; Elkin, I.

2007-01-01

The goal of this paper is to study self-organization processes that cause nanostructural evolution in nonlinear crystal media. The subjects of the investigation were nonlinear homogeneous and heterogeneous atom chains. The method of computer simulation was used to investigate the interaction between low-energy ions and crystal lattices. It was based on the conception of three-dimensional lattice as a nonlinear atom chain system. We showed that that in homogeneous atom chains critical energy needed for self-organization processes development is less than for nonlinear atom chain with already embedded clusters. The possibility of nanostructure formation was studied by a molecular dynamics method of nonlinear oscillations in atomic oscillator systems of crystal lattices after their low-energy ion irradiation. (authors)

Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

Energy Technology Data Exchange (ETDEWEB)

Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-01

InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

Fast neutron irradiation and thermal properties of doped nonstoichiometric lithium potassium sulphate crystals

International Nuclear Information System (INIS)

Kassem, M.E.; Gomaa, N.G.; El-Khatib, A.M.

1990-01-01

The influence of point defects introduced by fast neutron irradiations with neutron fluences up to 1.08 x 10 10 n/cm 2 on the thermal properties of pure and doped Li 1.4 K 0.6 SO 4 single crystals are studied in the vicinity of high temperature phase transition at 705 K. The temperature dependence of specific heat is found to be shifted towards lower temperature with the increase of neutron fluence, and can be affected by the presence of Cu 2+ dopant. The change in the value of the specific heat can be attributed to the presence of internal strain generated inside the crystal. (author)

X-ray diffraction in laser-irradiated epsomite crystals grown in presence of borax

International Nuclear Information System (INIS)

Zaitseva, E.V.; Portnov, V.N.; Faddeev, M.A.; Chuprunov, E.V.

1997-01-01

Relative changes in the intensities ΔI/I of the (220) and (440) X-ray diffraction reflection during laser irradiation of epsomite (MgSO 2 ·7H 2 O) crystals grown from an aqueous solution in the presence of borax (Na 2 B 4 O 7 ·10H 2 O) were measured using the CoK α , CuK α , MoK α radiations. The intensities measured depend on the real crystal structure dependent on the borax content in the solution. The dependence of ΔI/I is studied as a function of borax in the solution and X-ray-radiation wavelength

Thermal healing of the sub-surface damage layer in sapphire

International Nuclear Information System (INIS)

Pinkas, Malki; Lotem, Haim; Golan, Yuval; Einav, Yeheskel; Golan, Roxana; Chakotay, Elad; Haim, Avivit; Sinai, Ela; Vaknin, Moshe; Hershkovitz, Yasmin; Horowitz, Atara

2010-01-01

The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

Energy Technology Data Exchange (ETDEWEB)

Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; and others

1998-03-01

A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

Cross-section of single-crystal materials used as thermal neutron filters

International Nuclear Information System (INIS)

Adib, M.

2005-01-01

Transmission properties of several single crystal materials important for neutron scattering instrumentation are presented. A computer codes are developed which permit the calculation of thermal diffuse and Bragg-scattering cross-sections of silicon., and sapphire as a function of material's constants, temperature and neutron energy, E, in the range 0.1 MeV .A discussion of the use of their single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons is given

Sapphire-fiber-based distributed high-temperature sensing system.

Science.gov (United States)

Liu, Bo; Yu, Zhihao; Hill, Cary; Cheng, Yujie; Homa, Daniel; Pickrell, Gary; Wang, Anbo

2016-09-15

We present, for the first time to our knowledge, a sapphire-fiber-based distributed high-temperature sensing system based on a Raman distributed sensing technique. High peak power laser pulses at 532 nm were coupled into the sapphire fiber to generate the Raman signal. The returned Raman Stokes and anti-Stokes signals were measured in the time domain to determine the temperature distribution along the fiber. The sensor was demonstrated from room temperature up to 1200°C in which the average standard deviation is about 3.7°C and a spatial resolution of about 14 cm was achieved.

Effect of 520 MeV Kr{sup 20+} ion irradiation on the critical current density of Bi-2212 single crystals

Energy Technology Data Exchange (ETDEWEB)

Terai, Takayuki; Ito, Yasuyuki [Tokyo Univ. (Japan). Faculty of Engineering; Kishio, Kouji

1996-10-01

Change in magnetic properties of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} (Bi-2212) single crystals due to Kr{sup 20+} ion irradiation is reported, focused on critical current density and irreversibility magnetic field. The Bi-2212 single crystal specimens (3x3x0.3 mm{sup 3}) were prepared by the floating zone method. Each specimen was irradiated with 520 MeV Kr{sup 20+} ions of 10{sup 10}-10{sup 11} cm{sup -2} in the fluence. Magnetic hysteresis was measured at 4.2K-60K with a vibrating sample magnetometer before and after irradiation. Very large enhancement was observed in critical current density and irreversibility magnetic field above 20K. (author)

Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

International Nuclear Information System (INIS)

Wang, R.X.; Xu, S.J.; Fung, S.; Beling, C.D.; Wang, K.; Li, S.; Wei, Z.F.; Zhou, T.J.; Zhang, J.D.; Huang Ying; Gong, M.

2005-01-01

GaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A 1 (LO) peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects (likely to be Ge Ga ) give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN

Radiation defects in InN irradiated with high-energy electrons

International Nuclear Information System (INIS)

Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

2013-01-01

The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

Mechanical characterization of magnesium aluminate MgO·nAl2O3 spinel single crystals irradiated with Cu- ions

International Nuclear Information System (INIS)

Ohmura, Takahito; Lee, Chi-Gyu; Kishimoto, Naoki

2003-01-01

Ion-irradiation response of spinel single crystals was investigated using a nanoindentation technique. Specimens of stoichiometric (n=1) and non-stoichiometric (n=2.4) single crystals of MgO n(Al 2 O 3 ) spinel were irradiated with 60 keV Cu - ion at room temperature. Dose rate ranged from 1 to 100 μA/cm 2 , and a total dose was kept constant at 3x10 16 ions/cm 2 . Both plastic hardness and elastic modulus of all the irradiated specimens were softened. Radiation-induced swelling simultaneously occurred. Rutherford back scattering spectroscopy detected disordering of spinel crystalline structure. Accordingly, the radiation-induced softening and swelling are ascribed to accumulation of point defects associated with the disordering. In comparison between the stoichiometric and the non-stoichiometric specimens, the radiation-induced softening is suppressed in the non-stoichiometric composition. (author)

Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

International Nuclear Information System (INIS)

Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

2006-01-01

The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

Theoretical study of Cherenkov radiation emission in anisotropic uniaxial crystals

Energy Technology Data Exchange (ETDEWEB)

Delbart, A; Derre, J

1996-04-01

A theoretical review of the Cherenkov radiation emission in uniaxial crystals is presented. The formalism of C. Muzicar in terms of energetic properties of the emitted waves are corrected. This formalism is used to simulate the Cherenkov radiation emission in a strongly birefringent sodium nitrate crystal (NaNO{sub 3}) and to investigate the consequences of the slight anisotropy of sapphire (Al{sub 2}O{sub 3}) on the design of the Optical Trigger. (author). 12 refs. Submitted to Physical Review, D (US).

Solid solutions of gadolinium doped zinc oxide nanorods by combined microwave-ultrasonic irradiation assisted crystallization

Science.gov (United States)

Kiani, Armin; Dastafkan, Kamran; Obeydavi, Ali; Rahimi, Mohammad

2017-12-01

Nanocrystalline solid solutions consisting of un-doped and gadolinium doped zinc oxide nanorods were fabricated by a modified sol-gel process utilizing combined ultrasonic-microwave irradiations. Polyvinylpyrrolidone, diethylene glycol, and triethylenetetramine respectively as capping, structure directing, and complexing agents were used under ultrasound dynamic aging and microwave heating to obtain crystalline nanorods. Crystalline phase monitoring, lattice parameters and variation, morphology and shape, elemental analysis, functional groups, reducibility, and the oxidation state of emerged species were examined by PXRD, FESEM, TEM, EDX, FTIR, micro Raman, H2-TPR, and EPR techniques. Results have verified that irradiation mechanism of gelation and crystallization reduces the reaction time, augments the crystal quality, and formation of hexagonal close pack structure of Wurtzite morphology. Besides, dissolution of gadolinium within host lattice involves lattice deformation, unit cell distortion, and angular position variation. Structure related shape and growth along with compositional purity were observed through microscopic and spectroscopic surveys. Furthermore, TPR and EPR studies elucidated more detailed behavior upon exposure to the exerted irradiations and subsequent air-annealing including the formed oxidation states and electron trapping centers, presence of gadolinium, zinc, and oxygen disarrays and defects, as well as alteration in the host unit cell via gadolinium addition.

Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

Science.gov (United States)

Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

1982-05-01

This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

Femtosecond laser micromachining of sapphire capillaries for laser-wakefield acceleration

Energy Technology Data Exchange (ETDEWEB)

Messner, Philipp; Delbos, Niels Matthias; Maier, Andreas R. [CFEL, Center for Free-Electron Laser Science, 22607 Hamburg (Germany); University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany); Calmano, Thomas [University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany)

2015-07-01

Laser-plasma accelerator are promising candidates to provide ultra-relativistic electron beams for compact light sources. One factor that limits the achievable electron beam energy in a laser plasma accelerator is the Rayleigh length of the driver laser, which dictates the length over which the electron beams can effectively be accelerated. To overcome this limitation lasers can be guided in a capillary waveguide to extend the acceleration length beyond the Rayleigh length. The production of waveguide structures on scales, that are suitable for plasma acceleration is very challenging. Here, we present experimental results from waveguide machining in sapphire crystals using a Clark MXR CPA 2010 laser with a wavelength of 775nm, 1KHZ repetition rate and a pulse duration of 160 fs. We discuss the effects of different parameters like energy, lens types, writing speed and polarisation on the size and shape of the capillaries, and compare the performance of different parameter sets.

Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

International Nuclear Information System (INIS)

Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

2016-01-01

Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

Thermo-luminescence and photoluminescence studies of Al2O3 irradiated with heavy ions

International Nuclear Information System (INIS)

Jheeta, K.S.

2008-06-01

Thermo-luminescence (TL) spectra of single crystals of Al 2 O 3 (sapphire) irradiated with 200 MeV swift Ag ions at different fluence in the range 1x10 11 to 1x10 13 ions/cm 2 has been recorded at room temperature by keeping the warming rate 2K/min. The TL glow curve of the irradiated samples has a simple structure with a prominent peak at ∼ 500 K with one small peak at 650 K. The intensity of main peak increases with the ion fluence. This has been attributed to the creation of new traps on irradiation. Also, a shift of 8 K in the peak position towards low temperature side has been observed at higher fluence 1x10 13 ions/cm 2 . In addition, photoluminescence (PL) spectra of irradiated samples have been recorded at room temperature upon 2.8 eV excitation. A broad band consisting of mainly two emission bands, respectively at 2.5 and 2.3 eV corresponding to F 2 and F 2 2+ defect centers is observed. The intensity of these bands shows an increasing trend up to fluence 5x10 12 ions/cm 2 and then decreases at higher fluence 1x10 13 ions/cm 2 . The results are interpreted in terms of creation of newly defect centers, clustering/aggregation and radiation-induced annihilation of defects. (author)

Correlation of beam electron and LED signal losses under irradiation and long-term recovery of lead tungstate crystals

International Nuclear Information System (INIS)

Batarin, V.A.; Butler, J.; Davidenko, A.M.; Derevschikov, A.A.; Goncharenko, Y.M.; Grishin, V.N.; Kachanov, V.A.; Konstantinov, A.S.; Kravtsov, V.I.; Kubota, Y.; Lukanin, V.S.; Matulenko, Y.A.; Melnick, Y.M.; Meschanin, A.P.; Mikhalin, N.E.; Minaev, N.G.; Mochalov, V.V.; Morozov, D.A.; Nogach, L.V.; Ryazantsev, A.V.; Semenov, P.A.; Semenov, V.K.; Shestermanov, K.E.; Soloviev, L.F.; Stone, S.; Uzunian, A.V.; Vasiliev, A.N.; Yakutin, A.E.; Yarba, J.

2005-01-01

Radiation damage in lead tungstate crystals reduces their transparency. The calibration that relates the amount of light detected in such crystals to incident energy of photons or electrons is of paramount importance to maintaining the energy resolution the detection system. We report on tests of lead tungstate crystals, read out by photomultiplier tubes, exposed to irradiation by monoenergetic electron or pion beams. The beam electrons themselves were used to measure the scintillation light output, and a blue light emitting diode (LED) was used to track variations of crystals transparency. We report on the correlation of the LED measurement with radiation damage by the beams and also show that it can accurately monitor the crystal recovery from such damage

Optical absorption of selenite single crystals subjected to high electric fields and irradiated with X-rays or γ-rays

International Nuclear Information System (INIS)

Mishra, Sakuntala; Rao, A.V.K.; Rao, K.V.

1988-01-01

Measurements of the optical absorption coefficient of selenite single crystals show two peaks at 236 and 400 nm when plotted as a function of wavelength. These peaks decrease with increasing irradiation time for both γ and X-rays. Subsequent thermal bleaching increases the absorption coefficient at all wavelengths and flattens out the peaks at 140 0 C and 330 0 C respectively. The imposition of an a.c. or d.c. field prior to irradiation preserves the thermal bleaching characteristics with an overall increase in absorption coefficient. These effects are attributed to two different types of bond formed by water of crystallization giving rise to the two absorption peaks. Irradiation may destroy some of the bands of loosely bound water molecules near defect regions leading to a decrease in absorption. Thermal bleaching removes water molecules reducing the transparency of the samples, the more strongly bound molecules being removed at the higher temperature. Irradiation after a.c. or d.c. field treatment may introduce more defect regions enabling the removal of more water molecules by bleaching and hence increasing the absorption. (U.K.)

Microstructure evolution in carbon-ion implanted sapphire

International Nuclear Information System (INIS)

Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

2010-01-01

Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

The near-infrared waveguide properties of an LGS crystal formed by swift Kr{sup 8+} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China); Sun, Jian-Rong; Wang, Zhi-Guang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Xue-Lin, E-mail: xuelinwang@sdu.edu.cn [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China)

2013-11-15

In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr{sup 8+}-ion implantation at a fluence of 1 × 10{sup 12} cm{sup −2}. The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr{sup 8+} ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light.

SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

Energy Technology Data Exchange (ETDEWEB)

Shimoji, Yutaka

2010-08-09

Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

Broadband multiplex coherent anti-Stokes Raman scattering microscopy employing photonic-crystal fibers

DEFF Research Database (Denmark)

Andresen, Esben Ravn; Paulsen, Henrik Nørgaard; Birkedal, Victoria

2006-01-01

We demonstrate spectral multiplex coherent anti-Stokes Raman scattering (CARS) spectroscopy and microscopy based on a single Ti:sapphire oscillator and a nonlinear photonic-crystal fiber (PCF). The Stokes pulse is generated by spectral conversion of the laser pulse in a PCF. The pump pulse is eit...

Electrical and optical properties of neutron-irradiated GaP crystals

International Nuclear Information System (INIS)

Kawakubo, T.; Okada, M.

1990-01-01

Infrared absorption, electron paramagnetic resonance (EPR) spectra, and the electrical resistivity of semi-insulating liquid encapsulated Czochralski GaP crystals irradiated by fast neutrons with a dose of 7.6x10 18 n cm -2 have been studied. The electrical resistivity decreases with irradiation from 10 6 Ω cm to 1.5 kΩ cm. The temperature dependence of resistivity at low temperature is fitted to exp(b/T 1/4 ). The strong continuous optical absorption extends to 0.32 eV and its tail spreads until 0.12 eV. The EPR spectrum exhibits a broad singlet at 77 K and a doublet with five line structures at room temperature, which is attributed to antisite defects P Ga . The strong infrared absorption begins to be annealed at 150 degree C, and the EPR broad singlet decreases with anneals in the same temperature range. The strong infrared absorption is assumed to arise from interstitial phosphorus clusters. A discussion is given concerning the species responsible for the EPR singlet

Effect of coating thickness on interfacial shear behavior of zirconia-coated sapphire fibers in a polycrystalline alumina matrix

International Nuclear Information System (INIS)

Hellmann, J.R.; Chou, Y.S.

1995-01-01

The effect of zirconia (ZrO 2 ) interfacial coatings on the interfacial shear behavior in sapphire reinforced alumina was examined in this study. Zirconia coatings of thicknesses ranging from 0.15 to 1.45 μm were applied to single crystal sapphire (Saphikon) fibers using a particulate loaded sol dipping technique. After calcining at 1,100 C in air, the coated fibers were incorporated into a polycrystalline alumina matrix via hot pressing. Interfacial shear strength and sliding behavior of the coated fibers was examined using thin-slice indentation fiber pushout and pushback techniques. In all cases, debonding and sliding occurred at the interface between the fibers and the coating. The coatings exhibited a dense microstructure and led to a higher interfacial shear strength (> 240 MPa) and interfacial sliding stress (> 75 MPa) relative to previous studies on the effect of a porous interphase on interfacial properties. The interfacial shear strength decreased with increasing fiber coating thickness (from 389 ± 59 to 241 ± 43 MPa for 0.15 to 1.45 microm thick coatings, respectively). Sliding behavior exhibited load modulation with increasing displacement during fiber sliding which is characteristic of fiber roughness-induced stick-slip. The high interfacial shear strengths and sliding stresses measured in this study, as well as the potentially strength degrading surface reconstruction observed on the coated fibers after hot pressing and heat treatment, indicate that dense zirconia coatings are not suitable candidates for optimizing composite toughness and strength in the sapphire fiber reinforced alumina system

Ferrobielastic twinning in irradiated quartz

International Nuclear Information System (INIS)

Shiau, S.M.

1986-01-01

Cultured quartz is usually free from electrical twinning; however, it may occur if the seed crystal is twinned or if undue applied forces are exerted on the crystal. Ferrobielastic twinning was studied optically (photoelastic effect) and electrically (piezoelectric effect). At room temperature, twins were perceptible at stresses of about 2.l5 x 10 8 N/m 2 , and crystals switched from their original states to the alternative twin states at stresses about 5.0 x 10 8 N/m 2 (called coercive stress). The decrease in coercive stress with increasing temperature was observed, and these coercive stresses become very low as temperatures reach to 300 0 C. The effects of irradiation on the twinning in quartz were also studied. The presence of defects produced by irradiation was utilized to pin the domain wall motion. Both neutrons and gamma rays were employed. The stress required to nucleate an appreciable volume of twins is about twice as high for irradiated crystals than for those unirradiated. This result demonstrated that the irradiated crystals can tolerate higher stresses. However, the coercive stress for complete switch-over was not much different for irradiated and unirradiated crystals. It appears that the defects caused by irradiation eliminate the initial twinning events but do not affect switch-over

Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

Energy Technology Data Exchange (ETDEWEB)

Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

2016-06-06

This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film

DEFF Research Database (Denmark)

Mozhaev, P. B.; Ovsyannikov, G. A.; Skov, Johannes

1999-01-01

The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending on t...

Fabrication of lithium ceramic pellets, rings and single crystals for irradiation in BEATRIX-II

International Nuclear Information System (INIS)

Slagle, O.D.; Noda, K.; Takahashi, T.

1989-04-01

BEATRIX-II is an IEA sponsored experiment of lithium ceramic solid breeder materials in the FFTF/MOTA. Li 2 O solid pellets and annular ring specimens were fabricated for in-situ tritium release tests. In addition, a series of single crystal and polycrystalline lithium ceramic samples were fabricated to determine the irradiation behavior and beryllium compatibility. 6 refs., 10 figs., 4 tabs

Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process; Utilisation d'une nouvelle reflectometrie spectroscopique pour optimiser un procede de fabrication CMOS/SOS durci aux radiations

Energy Technology Data Exchange (ETDEWEB)

Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D. [Raytheon Systems company, Microelectronics Div., Newport Beach, California (United States); Li, G.P.; Tsai, C.S. [California Univ., School of Engineering, Newport Beach, CA (United States)

1999-07-01

A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

Influence of gamma-irradiation on the electroluminescence of ZnSe:Zn,Te crystals

International Nuclear Information System (INIS)

Elmuratova, D.B.; Ibragimova, E.M.

2007-01-01

Effect of 60 Co gamma-radiation at the dose rate of 10 Gy/s on electroluminescence (El)Zn Se crystals with 0.5 weight % Te treated in zinc vapor was studied for possible manufacturing of light emitting structures. Broad El band with the maximum at 610 nm is excited in the origin samples at a voltage above 15 V. After irradiation to the high dose of 10 6 Gy the El intensity grows by ∼2.5 times in the direct polarity at 24 V. The observed El of Zn Se:Zn,Te single crystals is assumed to be caused by the charge carrier recombination at the interstitial zinc centers by the excitation mechanism of a barrier sub breakdown type (authors)

(211) oriented ZnTe growth on m-plane sapphire by MBE

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

2013-11-15

Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Sea level characterization of a 1100 g sapphire bolometer

CERN Document Server

Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

1999-01-01

A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

Structural disorder in sapphire induced by 90.3 MeV xenon ions

International Nuclear Information System (INIS)

Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

2010-01-01

In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

Fabrication of planar waveguide in KNSBN crystal by swift heavy ion beam irradiation

International Nuclear Information System (INIS)

Guan, Jing; Wang, Lei; Qin, Xifeng

2013-01-01

We report on the fabrication of the planar waveguides in the KNSBN crystal by using 17 MeV C 5+ ions at a fluence of 2 × 10 14 ions/cm 2 . After implantation, near surface regions of the crystal, there has a positive extraordinary refractive index (n e ) change and the light inside the waveguides can propagate in a non-leaky manner. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the reconstructed modal distributions. The propagation loss for C 5+ irradiated waveguide is ∼0.8 dB/cm at 633 nm and ∼0.72 dB/cm at 1064 nm. The waveguide gives good confinement of waveguide modes, which exhibits acceptable guiding qualities for potential applications in integrated optics

Fabrication of planar waveguide in KNSBN crystal by swift heavy ion beam irradiation

Science.gov (United States)

Guan, Jing; Wang, Lei; Qin, Xifeng

2013-11-01

We report on the fabrication of the planar waveguides in the KNSBN crystal by using 17 MeV C5+ ions at a fluence of 2 × 1014 ions/cm2. After implantation, near surface regions of the crystal, there has a positive extraordinary refractive index (ne) change and the light inside the waveguides can propagate in a non-leaky manner. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the reconstructed modal distributions. The propagation loss for C5+ irradiated waveguide is ∼0.8 dB/cm at 633 nm and ∼0.72 dB/cm at 1064 nm. The waveguide gives good confinement of waveguide modes, which exhibits acceptable guiding qualities for potential applications in integrated optics.

Spectrally resolved thermally stimulated luminescence of irradiated anion-defective alumina single crystals

Energy Technology Data Exchange (ETDEWEB)

Kortov, V., E-mail: vskortov@mail.ru [Ural Federal University, Mira Str. 19, 620002 Ekaterinburg (Russian Federation); Lushchik, A.; Nagirnyi, V. [Institute of Physics, University of Tartu, W. Ostwald Str. 1, 50411 Tartu (Estonia); Ananchenko, D. [Ural Federal University, Mira Str. 19, 620002 Ekaterinburg (Russian Federation); Romet, I. [Institute of Physics, University of Tartu, W. Ostwald Str. 1, 50411 Tartu (Estonia)

2017-06-15

Thermally stimulated luminescence (TSL) spectra in the 313–580 K temperature range have been studied in anion-defective alumina crystals (named in literature as Al{sub 2}O{sub 3}:C) exposed to different irradiation doses. The TSL curve features two peaks with the maxima at T{sub m1}=437 K and T{sub m2}=565 K. The TSL spectrum of the first peak contains the emission of F centers and the R line of Cr{sup 3+} impurity ions. The absence of the emission of F{sup +} centers indicates that electron traps are responsible for the first dosimetric TSL peak. The TSL spectrum of the second peak features emission bands of F, F{sup +} centers, R line as well as a wide band centered at 550 nm and associated with the formation of aggregate centers (F{sub 2} and F{sub 2}{sup 2+}) under irradiation. Possible excitation mechanisms of the TSL emission bands that involve both electron and hole traps related to anion vacancies and impurities are discussed. - Highlights: •TSL curve of alumina crystals features peaks at 437 and 565 K. •There are emission bands of 410 and 695 nm in the TSL spectrum of the first peak. •TSL spectrum of the second peak features bands of F, F{sub 2}-type centers and the R line of trivalent chromium. •Excitation mechanisms of the emission bands in TSL spectra are discussed.

Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

Energy Technology Data Exchange (ETDEWEB)

Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

2015-07-15

Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

Science.gov (United States)

Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

2017-10-01

Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

Optical bleaching of F-centers in BaFCl crystals after X-irradiation at room temperature

International Nuclear Information System (INIS)

Inabe, K.; Nakamura, S.; Takeuchi, N.

1988-01-01

The optical bleaching behaviour of the F-band formed by X-irradiation in BaFCl crystals is investigated paying attention to the difference between two types of F-centers. Optical absorption spectra, decay curves of the F-band under excitation with F light and excitation spectra of the bleaching are given and discussed. The bleaching of the F-bands is achieved by light in the absorption band irrespective of the component. Energy transfer among excited states of F-centers is responsible for the bleaching of F-centers in BaFCl crystals, involving energy transfer between F(Cl - ) and F(F - ) centers in their optical bleaching process

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

International Nuclear Information System (INIS)

Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

2006-01-01

High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

Directory of Open Access Journals (Sweden)

Wen Hua-Chiang

2010-01-01

Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

Surface modification of LiNbO3 and KTa1-xNbxO3 crystals irradiated by intense pulsed ion beam

Science.gov (United States)

Cui, Xiaojun; Shen, Jie; Zhong, Haowen; Zhang, Jie; Yu, Xiao; Liang, Guoying; Qu, Miao; Yan, Sha; Zhang, Xiaofu; Le, Xiaoyun

2017-10-01

In this work, we studied the surface modification of LiNbO3 and KTa1-xNbxO3 irradiated by intense pulsed ion beam, which was mainly composed of H+ (70%) and Cn+ (30%) at an acceleration voltage of about 450 kV. The surface morphologies, microstructural evolution and elemental analysis of the sample surfaces after IPIB irradiation have been analyzed by scanning electron microscope, atomic force microscope, X-ray diffraction and energy dispersive spectrometer techniques, respectively. The results show that the surface morphologies have significant difference impacted by the irradiation effect. Regular gully damages range from 200 to 400 nm in depth appeared in LiNbO3 under 2 J/cm2 energy density for 1 pulse, block cracking appeared in KTa1-xNbxO3 at the same condition. Surface of the crystals have melted and were darkened with the increasing number up to 5 pulses. Crystal lattice arrangement is believed to be the dominant reason for the different experimental results irradiated by intense pulsed ion beam.

Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

Science.gov (United States)

Shen, Jie; Yu, Xiao; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Liang, Guoying; Yu, Xiang; Huang, Wanying; Shahid, Ijaz; Zhang, Xiaofu; Yan, Sha; Le, Xiaoyun

2018-04-01

Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters' formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

Frequency Doubling Broadband Light in Multiple Crystals

International Nuclear Information System (INIS)

Alford, William J.; Smith, Arlee V.

2000-01-01

The authors compare frequency doubling of broadband light in a single nonlinear crystal with doubling in five crystals with intercrystal temporal walk off compensation, and with doubling in five crystals adjusted for offset phase matching frequencies. Using a plane-wave, dispersive numerical model of frequency doubling they study the bandwidth of the second harmonic and the conversion efficiency as functions of crystal length and fundamental irradiance. For low irradiance the offset phase matching arrangement has lower efficiency than a single crystal of the same total length but gives a broader second harmonic bandwidth. The walk off compensated arrangement gives both higher conversion efficiency and broader bandwidth than a single crystal. At high irradiance, both multicrystal arrangements improve on the single crystal efficiency while maintaining broad bandwidth

Neutron method for NDA in the Sapphire Project

International Nuclear Information System (INIS)

Lewis, K.D.

1995-01-01

The implementation of Project Sapphire, the top-secret mission to the Republic of Kazakhstan to recover weapons-grade nuclear materials, consisted of four major elements: (1) repacking of fissile material from Kazakh containers into suitable U.S. containers; (2) nondestructive analyses (NDA) to quantify the 235 U content of each container for nuclear criticality safety and compliance purposes; (3) packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of the Sapphire operations to analyze uranium/beryllium (U/Be) alloys and compounds for 235 U content

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

Mobility of charge carriers in electron-irradiated crystals of n-type Hg0.8Cd0.2Te

International Nuclear Information System (INIS)

Voitsekhovskii, A.V.; Kiryushkin, E.M.; Kokhanenko, A.P.; Kurbanov, K.R.; Lilenko, Yu.V.

1988-01-01

We present the results of an investigation of the behavior of the mobility of the charge carriers in Hg 1-x Cd x Te crystals with n-type conduction as a function of the dose of irradiation by electrons with an energy of 3.0 MeV at 300 K and the initial content of defects in the material. The complex character of the variation of the mobility of the electrons as a function of the dose observed when crystals of n-Hg 1-x Cd x Te (x ∼ 0.20) with different initial concentrations of defects are irradiated by fast electrons has been attributed to the influence of the factors of the shielding of the ionized scattering centers by electrons and the additional scattering of the charge carriers on the radiation defects. Good agreement between the experimental and calculated plots of the dependence of the mobility of electrons on the irradiation dose has been obtained with consideration of a model of the simultaneous introduction of donor (single charged) and acceptor (doubly charged) defects into a narrow-band semiconductor characterized by a degenerate and nonparabolic conduction band

Zn nanoparticle formation in FIB irradiated single crystal ZnO

Science.gov (United States)

Pea, M.; Barucca, G.; Notargiacomo, A.; Di Gaspare, L.; Mussi, V.

2018-03-01

We report on the formation of Zn nanoparticles induced by Ga+ focused ion beam on single crystal ZnO. The irradiated materials have been studied as a function of the ion dose by means of atomic force microscopy, scanning electron microscopy, Raman spectroscopy and transmission electron microscopy, evidencing the presence of Zn nanoparticles with size of the order of 5-30 nm. The nanoparticles are found to be embedded in a shallow amorphous ZnO matrix few tens of nanometers thick. Results reveal that ion beam induced Zn clustering occurs producing crystalline particles with the same hexagonal lattice and orientation of the substrate, and could explain the alteration of optical and electrical properties found for FIB fabricated and processed ZnO based devices.

Femtosecond laser irradiation of olivine single crystals: Experimental simulation of space weathering

Science.gov (United States)

Fazio, A.; Harries, D.; Matthäus, G.; Mutschke, H.; Nolte, S.; Langenhorst, F.

2018-01-01

Space weathering is one of the most common surface process occurring on atmosphere-free bodies such as asteroids and the Moon. It is caused mainly by solar wind irradiation and the impact of micrometeoroids. In order to simulate space weathering effects, in particular those produced by hypervelocity impacts, we produced microcraters via ultra-short (∼100 fs) laser irradiation of crystallographically oriented slices of forsterite-rich (Fo94.7) olivine. The main advantages of the application of a femtosecond laser radiation to reproduce the space weathering effects are (1) the high peak irradiance (1015 W cm-2), which generates the propagation of the shock wave at the nanosecond timescale (i.e., timescale of the micrometeoroid impacts); (2) the rapid transfer of energy to the target material, which avoids the interaction of laser light with the developing vapor plume; (3) a small laser beam, which allows the effects of a single impact to be simulated. The results of our spectroscopic and electron microscopic investigation validate this approach: the samples show strong darkening and reddening of the reflectance spectra and structural damages similar to the natural microcraters found on regolith grains of the Moon and asteroid 25143 Itokawa. Detailed investigations of several microcrater cross-sections by transmission electron microscopy allowed the detection of shock-induced defect microstructures. From the top to the bottom of the grain, the shock wave causes evaporation, melting, solid-state recrystallization, misorientation, fracturing, and the propagation of dislocations with Burgers vectors parallel to [001]. The formation of a short-lived vapor plume causes the kinetic fractionation of the gas and the preferential loss of lighter elements, mostly magnesium and oxygen. The high temperatures within the melt layer and the kinetic loss of oxygen promote the thermal reduction of iron and nickel, which leads to the formation of metallic nanoparticles (npFe0). The

Optical waveguides in LiTaO3 crystals fabricated by swift C5+ ion irradiation

International Nuclear Information System (INIS)

Liu, Guiyuan; He, Ruiyun; Akhmadaliev, Shavkat; Vázquez de Aldana, Javier R.; Zhou, Shengqiang; Chen, Feng

2014-01-01

We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO 3 crystal by using carbon (C 5+ ) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C 5+ ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm

Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

DEFF Research Database (Denmark)

König, Karsten; Andersen, Peter E.; Le, Tuan

2015-01-01

Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...... imaging capability using different biological samples, i.e. cell monolayers, corneal tissue, and human skin. With the novel laser, the realization of very compact Ti:sapphire-based systems for high-quality multiphoton imaging at a significantly size and weight compared to current systems will become...

Resonance laser-plasma excitation of coherent terahertz phonons in the bulk of fluorine-bearing crystals under high-intensity femtosecond laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Potemkin, F V; Mareev, E I [International Laser Center, M. V. Lomonosov Moscow State University, Moscow (Russian Federation); Khodakovskii, N G [A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation); Mikheev, P M

2013-08-31

The dynamics of coherent phonons in fluorine-containing crystals was investigated by pump-probe technique in the plasma production regime. Several phonon modes, whose frequencies are overtones of the 0.38-THz fundamental frequency, were simultaneously observed in a lithium fluoride crystal. Phonons with frequencies of 1 and 0.1 THz were discovered in a calcium fluoride crystal and coherent phonons with frequencies of 1 THz and 67 GHz were observed in a barium fluoride crystal. Furthermore, in the latter case the amplitudes of phonon mode oscillations were found to significantly increase 15 ps after laser irradiation. (interaction of laser radiation with matter)

Spectrometric properties and radiation damage of BGO crystals

Science.gov (United States)

Kim, Gen C.; Gasanov, Eldar M.

1997-07-01

Spectrometric properties, such as light output, energy resolution BGO crystals before and after (superscript 60)Co gamma-ray (dose 10(superscript 4) - 10(superscript 6) R) and neutron irradiation (fluence 10(superscript 14) cm(superscript -2)) are investigated. Condition for degradation of spectrometric properties and their recovering after irradiation are studied. The energy spectrum of the photons emitted from BGO crystals irradiated with neutron fluence contains the long living background peak which is caused by self-irradiation with radioactive isotopes produced in the crystals. The defect production was studied in crystals under the high dose gamma-irradiation with (superscript 60)Co isotope. It was found that after doses above 10(superscript 8) R the color center at 365 nm and doses higher than 10(superscript 9) R a wide absorption band in the region of 300 - 350 nm occur. Comparison of these results with those of reactor irradiation has shown that under the high dose gamma-irradiation the structure defect production takes place.

Effect of γ-irradiation on the lattice parameter and colour centre concentration in pure Ca2+, Sr2+ and Eu2+ doped KCl crystals

International Nuclear Information System (INIS)

Damm, J.Z.; Stepien-Damm, J.

1980-01-01

The changes of lattice parameter and colour centre concentration are examined in KCl crystals (both pure and Me 2+ -doped) irradiated by γ-rays at room temperature. For the pure crystals the relative volume change vs. F-centre concentration plot reveals the presence of two stages, one ascribed to the introduction of colour centre pairs (or F centres only) and other to the generation of new dislocations (or new dislocations with trapped-hole centres). In Me 2+ doped crystals the lattice expansion bears a complex character (in the initial irradiation stage a transient maximum appears). Additional anomaly appears in Eu 2+ KCl in the high-dose range where in spite of a distinct F-centre concentration drop a marked raise of the lattice parameter is observed. (author)

Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

Science.gov (United States)

Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

2017-09-01

Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

2017-01-01

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding

2017-05-12

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

ESR studies of electron irradiated K3Ir(CN)6 in KCl single crystals

International Nuclear Information System (INIS)

Vugman, N.V.; Pinhal, N.M.

1983-01-01

ESR studies of KCl single crystals doped with small amounts of K 3 Ir(CN) 6 and submitted to a prolongued 2 MeV electron irradiation at room temperature reveal the presence of the [IR(CN) 5 Cl] 4- and [Ir(CN) 4 Cl 2 ] 4- new molecular species. Ligand spin densities and ligand field parameters are calculated from the experimental hyperfine and superhyperfine interactions and compared to previous data on the [Ir(CN) 5 ] 4- species. (Author) [pt

Damage evolution in Xe-ion irradiated rutile (TiO2) single crystals

International Nuclear Information System (INIS)

Li, F.; Sickafus, K.E.; Evans, C.R.; Nastasi, M.

1999-01-01

Rutile (TiO 2 ) single crystals with (110) orientation were irradiated with 360 keV Xe 2+ ions at 300 K to fluences ranging from 2 x 10 19 to 1 x 10 20 Xe/m 2 . Irradiated samples were analyzed using: (1) Rutherford backscattering spectroscopy combined with ion channeling analysis (RBS/C); and (2) cross-sectional transmission electron microscopy (XTEM). Upon irradiation to a fluence of 2 x 10 19 Xe/m 2 , the sample thickness penetrated by the implanted ions was observed to consist of three distinct layers: (1) a defect-free layer at the surface (thickness about 12 nm) exhibiting good crystallinity; (2) a second layer with a low density of relatively large-sized defects; and (3) a third layer consisting of a high concentration of small defects. After the fluence was increased to 7 x 10 19 Xe/m 2 , a buried amorphous layer was visible by XTEM. The thickness of the amorphous layer was found to increase with increasing Xe ion fluence. The location of this buried amorphous layer was found to coincide with the measured peak in the Xe concentration (measured by RBS/C), rather than with the theoretical maximum in the displacement damage profile. This observation suggests the implanted Xe ions may serve as nucleation sites for the amorphization transformation. The total thickness of the damaged microstructure due to ion irradiation was always found to be much greater than the projected range of the Xe ions. This is likely due to point defect migration under the high stresses induced by ion implantation

Mixed garnet laser crystals for water vapour DIAL transmitter

Science.gov (United States)

Treichel, Rainer; Czeranowsky, Christoph; Ileri, Bilge; Petermann, Klaus; Huber, Günter

2017-11-01

There are more or less well established technologies such as the optical-parametric-oscillator (OPO), the Raman-laser, and the Ti-Sapphire laser, which are able to emit laser light in the region of the water vapour absorption lines. For WALES the regions of about 935 nm, 942 nm, and 944 nm have been identified as the most suitable wavelength ranges. However, each of these laser designs is highly sophisticated. Current baseline for WALES is the Ti-Sapphire laser. A fourth possibility to achieve these wavelength ranges is to shift the groundstate laser lines (938 nm and 946 nm) of the Nd:YAG laser by replacing Aluminium and Yttrium by other rare earth elements. Changes of the host lattice characteristics lead to a shift of the upper and lower laser levels. These modified crystals are summarized under the name of "Mixed Garnet" crystals. Only the Mixed Garnet lasers can be pumped directly with diode laser and use a direct approach to generate the required laser pulses without frequency conversion. Therefore no additional non-linear crystals are needed and a higher electric to optical efficiency is expected as well as single frequency operation using spectral tuning elements like etalons. Such lasers have the great potential to fulfil the requirements and to become the preferred transmitter concept for WALES as well as for follow up missions. Within a ESA study several crystal compositions have been grown, spectrally characterised and analysed. Absorbed space radiation energy in the crystal lattice causes colour centres, which can reabsorb the pump and laser wavelength and consequently reduce the laser gain considerably. Co-dopants such as Chromium and Cerium are able to suppress the colour centres and are candidates for effective radiation hardening. The results of the crystal tuning, the co-doping with different radiation hardeners and the radiation tests will be presented. There applicability for a space based water vapour DIAL transmitter will be discussed.

Oxygen vacancy-induced room-temperature ferromagnetism in D—D neutron irradiated single-crystal TiO2 (001) rutile

Science.gov (United States)

Xu, Nan-Nan; Li, Gong-Ping; Pan, Xiao-Dong; Wang, Yun-Bo; Chen, Jing-Sheng; Bao, Liang-Man

2014-10-01

Remarkable room temperature ferromagnetism in pure single-crystal rutile TiO2 (001) samples irradiated by D—D neutron has been investigated. By combining X-ray diffraction and positron annihilation lifetime, the contracted lattice has been clearly identified in irradiated TiO2, where Ti4+ ions can be easily reduced to the state of Ti3+. As there were no magnetic impurities that could contaminate the samples during the whole procedure, some Ti3+ ions reside on interstitial or substituted sites accompanied by oxygen vacancies should be responsible for the ferromagnetism.

Laser irradiation and thermal treatment inducing selective crystallization in Sb2O3-Sb2S3 glassy films

Science.gov (United States)

Avila, L. F.; Pradel, A.; Ribeiro, S. J. L.; Messaddeq, Y.; Nalin, M.

2015-02-01

The influence of both thermal treatment and laser irradiation on the structural and optical properties of films in the Sb2O3-Sb2S3 system was investigated. The films were prepared by RF-sputtering using glass compositions as raw materials. Irreversible photodarkening effect was observed after exposure the films to a 458 nm solid state laser. It is shown, for the first time, the use of holographic technique to measure "in situ", simultaneously and independently, the phase and amplitude modulations in glassy films. The films were also photo-crystallized and analysed "in situ" using a laser coupled to a micro-Raman equipment. Results showed that Sb2S3 crystalline phase was obtained after irradiation. The effect of thermal annealing on the structure of the films was carried out. Different from the result obtained by irradiation, thermal annealing induces the crystallization of the Sb2O3 phase. Photo and thermal induced effects on films were studied using UV-Vis and Raman spectroscopy, atomic force microscopy (AFM), thermal analysis (DSC), X-ray diffraction, scanning electron microscopy (MEV) and energy-dispersive X-ray spectroscopy (EDX).

Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

Energy Technology Data Exchange (ETDEWEB)

Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

2005-10-01

We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

Spectroscopic analysis and laser performance of Tm3+ : NaGd(MoO4)2 crystal

International Nuclear Information System (INIS)

Guo Weijie; Chen Yujin; Lin Yanfu; Gong Xinghong; Luo Zundu; Huang Yidong

2008-01-01

Detailed polarized spectral properties of Tm 3+ : NaGd(MoO 4 ) 2 crystal have been investigated. The room temperature absorption and fluorescence spectra were recorded. The fluorescence decay mechanisms of the 1 G 4 and 3 H 4 multiplets in Tm 3+ : NaGd(MoO 4 ) 2 crystal were discussed. Room temperature quasi-cw 1.9 μm laser emission from the Ti : sapphire laser pumped Tm 3+ : NaGd(MoO 4 ) 2 crystal has been demonstrated. The maximum output power of 170 mW has been achieved with a slope efficiency of 25%

Influence of the reactor irradiation on the radiation-optical features of the PbWO4:La scintillation crystals

International Nuclear Information System (INIS)

Ashurov, M.Kh.; Ismoilov, Sh.Kh.; Khatamov, K.; Gasanov, Eh.M.; Rustamov, I.R.

2001-01-01

Within an International LHC project the lead tungstates (PbWO 4 ) scintillation crystals radiation stability activated by La ions was carried out. In the 400-700 nm length range the transmission spectra were measured on the different parts of the standard PbWO 4 :La crystals. The spectra were measured before and after irradiation by both fast neutrons and γ-radiation. On the base of obtained data the contribution of γ-quanta and neutrons in the radiation-induced losses value of optical radiation in the active media of the electromagnetic colorimeter was estimated

Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

International Nuclear Information System (INIS)

Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

2013-01-01

We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

Energy Technology Data Exchange (ETDEWEB)

Potthoff, H.H. (Technische Univ. Braunschweig (Germany, F.R.). Inst. fuer Metallphysik und Nukleare Festkoerperphysik)

1983-05-16

Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 ..mu..m, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 ..mu..m) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations.

Supercrystallization of KCl from solution irradiated by soft X-rays

Science.gov (United States)

Janavičius, A. J.; Rinkūnas, R.; Purlys, R.

2016-10-01

The X-rays influence on KCl crystallization in a saturated water solution has been investigated for the aim of comparing it with previously considered NaCl crystallization. The rate of crystallization has been measured in the drying drop in the solution activated by the irradiation. We have measured the influence of the irradiation time of the solution on the rates of KCl crystallization as well as the beginning of the crystallization processes on drying drops. For a longer irradiation time of the solution early crystallization in the drops occurs. A saturated water solution of KCl was irradiated with the diffractometer DRON-3M (Russian device) and this had a great influence on the two-step processes of crystallization. The ionization of the solution by soft X-rays can produce ions, metastable radicals in water, excited crystals' seeds and vacancies in growing crystals by Auger's effect. The X-rays generate a very fast crystallization in the drying drop.

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermoluminescence studies of Nd doped Bi_4Ge_3O_1_2 crystals irradiated by UV and beta sources

International Nuclear Information System (INIS)

Karabulut, Y.; Canimoglu, A.; Ekdal, E.; Ayvacikli, M.; Can, N.; Karali, T.

2016-01-01

Thermoluminescence (TL) glow curves of pure and rare earth doped bismuth germanate (BGO) were investigated under UV and beta radiation. The glow curves of pure BGO crystal present different patterns for both kinds of radiation. The TL glow curves of BGO crystals doped with Nd ions are similar to that of pure BGO under UV radiation. The kinetic parameters, kinetic order (b), activation energy (E) and frequency factor (s) of the TL glow curves of pure BGO crystal have been determined by peak shape method. Activation energies of 3 peaks obtained by PS were found to be 1.81, 1.15 and 1.78, respectively. - Highlights: • Thermoluminescence properties of pure and Nd doped BGO crystals. • Irradiated by UV and beta for TL glow curve analysis. • Evaluation of kinetic parameters by PS method.

ESR and ENDOR of free radicals in γ-irradiated single crystals of trimethoprim at room temperature

International Nuclear Information System (INIS)

Krzyminiewski, R.; Kawacka, U.; Pietrzak, J.; Erickson, R.; Lund, A.

1995-01-01

Singe crystals of trimethoprim were examined after γ-irradiation at room temperature by ESR and ENDOR spectroscopy. A radicals is formed by abstraction of a hydrogen atom from the CH 2 group of the bridge. The unpaired electron is delocalized mainly onto the trimethoxybenzyl ring. It interacts with one proton of the bridge and with two protons in the trimethoxybenzyl ring. (au) (14 refs.)

Crystal plasticity study of single crystal tungsten by indentation tests

International Nuclear Information System (INIS)

Yao, Weizhi

2012-01-01

Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing material in fusion reactors. Experiments on W heating in plasma sources and electron beam facilities have shown an intense micro-crack formation at the heated surface and sub-surface. The cracks go deep inside the irradiated sample, and often large distorted areas caused by local plastic deformation are present around the cracks. To interpret the crack-induced microscopic damage evolution process in W, one needs firstly to understand its plasticity on a single grain level, which is referred to as crystal plasticity. In this thesis, the crystal plasticity of single crystal tungsten (SCW) has been studied by spherical and Berkovich indentation tests and the finite element method with a crystal plasticity model. Appropriate values of the material parameters included in the crystal plasticity model are determined by fitting measured load-displacement curves and pile-up profiles with simulated counterparts for spherical indentation. The numerical simulations reveal excellent agreement with experiment. While the load-displacement curves and the deduced indentation hardness exhibit little sensitivity to the indented plane at small indentation depths, the orientation of slip directions within the crystals governs the development of deformation hillocks at the surface. It is found that several factors like friction, indentation depth, active slip systems, misoriented crystal orientation, misoriented sample surface and azimuthal orientation of the indenter can affect the indentation behavior of SCW. The Berkovich indentation test was also used to study the crystal plasticity of SCW after deuterium irradiation. The critical load (pop-in load) for triggering plastic deformation under the indenter is found to depend on the crystallographic orientation. The pop-in loads decrease dramatically after deuterium plasma irradiation for all three investigated crystallographic planes.

In-situ measurement of the strain relaxation of GaN nanograins during X-ray irradiation

International Nuclear Information System (INIS)

Choe, Hyeokmin; Lee, Sanghwa; Sohn, Yuri; Kim, Chinkyo

2008-01-01

GaN nanograins were grown on a c-plane sapphire substrate and their strain relaxation due to X-ray irradiation was investigated in-situ by utilizing synchrotron xray scattering. The GaN nanograins were constantly exposed to the synchrotron X-ray and θ-2θ scans through the (002) Bragg peak of GaN were repeatedly carried out during the irradiation. The Bragg peak of the compressively strained GaN nanograins gradually shifted toward higher angle, which implies that the GaN nanograins in compressive strain experienced strain relaxation during X-ray irradiation. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparative study of neutron irradiation and carbon doping in MgB2 single crystals

International Nuclear Information System (INIS)

Krutzler, C.; Zehetmayer, M.; Eisterer, M.; Weber, H. W.; Zhigadlo, N. D.; Karpinski, J.

2007-01-01

We compare the reversible and irreversible magnetic properties of superconducting carbon doped and undoped MgB 2 single crystals before and after neutron irradiation. A large number of samples with transition temperatures between 38.3 and 22.8 K allows us to study the effects of disorder systematically. Striking similarities are found in the modification of the reversible parameters by irradiation and doping, which are discussed in terms of impurity scattering and changes of the Fermi surface. The irreversible properties are influenced by two counteracting mechanisms: they are enhanced by the newly introduced pinning centers but degraded by changes in the thermodynamic properties. Accordingly, the large neutron induced defects and the small defects from carbon doping lead to significantly different effects on the irreversible properties. Finally, the fishtail effect caused by all kinds of disorder is discussed in terms of an order-disorder transition of the flux-line lattice

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

Science.gov (United States)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

Irradiation-Induced Nanostructures

Energy Technology Data Exchange (ETDEWEB)

Birtcher, R.C.; Ewing, R.C.; Matzke, Hj.; Meldrum, A.; Newcomer, P.P.; Wang, L.M.; Wang, S.X.; Weber, W.J.

1999-08-09

This paper summarizes the results of the studies of the irradiation-induced formation of nanostructures, where the injected interstitials from the source of irradiation are not major components of the nanophase. This phenomena has been observed by in situ transmission electron microscopy (TEM) in a number of intermetallic compounds and ceramics during high-energy electron or ion irradiations when the ions completely penetrate through the specimen. Beginning with single crystals, electron or ion irradiation in a certain temperature range may result in nanostructures composed of amorphous domains and nanocrystals with either the original composition and crystal structure or new nanophases formed by decomposition of the target material. The phenomenon has also been observed in natural materials which have suffered irradiation from the decay of constituent radioactive elements and in nuclear reactor fuels which have been irradiated by fission neutrons and other fission products. The mechanisms involved in the process of this nanophase formation are discussed in terms of the evolution of displacement cascades, radiation-induced defect accumulation, radiation-induced segregation and phase decomposition, as well as the competition between irradiation-induced amorphization and recrystallization.

Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects

Science.gov (United States)

Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

2018-02-01

Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.

Single-transverse-mode Ti:sapphire rib waveguide laser

NARCIS (Netherlands)

Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus

2005-01-01

Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison

Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

International Nuclear Information System (INIS)

He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

2003-01-01

Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

Directory of Open Access Journals (Sweden)

Kazuo Uchida

2012-12-01

Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

Directory of Open Access Journals (Sweden)

Shih-Jeh Wu

2016-10-01

Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

60Co-labeling in 59Co(n,γ)60Co reaction and γ-ray irradiation of [Co(dien)2]3+ and [Co(en)3]3+ in crystals and/or in polyvinyl alcohol

International Nuclear Information System (INIS)

Sasaki, K.; Iiyoshi, N.; Watanabe, J.; Yamatera, H.

1982-01-01

Three isomers (sym-fac, unsym-fac, and mer forms) of [Co(dien) 2 ]Cl 3 were irradiated in a reactor in the form of crystals and in amorphous solids, where the ions were dissolved in polyvinyl alcohol (PVA) or adsorbed on an SP-Sephadex ion exchanger. The distribution of produced 60 Co among the isomers of the Co(III) complex and the Co(II) species was determined. The preferential labeling on the parent isomer was observed in crystals but not in PVA. In the Sephadex, no marked labeling occurred. For comparison with reactor-irradiated samples, mixed solutions of [Co(dien) 2 ]Cl 3 and 60 Co-labeled cobalt (II) chloride dissolved in PVA films ([Co(III)]/[Co(II)] = 2 - 3) were irradiated by γ-rays. Significant labeling was observed after the irradiation. Comparison of the results from the above experiments showed that the labeling was enhanced by radiation chemical reactions, and that the preferential labeling on the parent isomer of crystal samples resulted from the stiffness of the crystal matrix. (orig.)

Impurity effects in neutron-irradiated simple oxides: Implications for fusion devices

International Nuclear Information System (INIS)

Gonzalez, R.; Chen, Y.; Caceres, D.; Vergara, I.

2006-01-01

Radiation damage induced by neutron irradiation was studied in undoped MgO crystals and in MgO doped with either iron, hydrogen or lithium impurities. The oxygen-vacancy concentration produced by irradiation increases with neutron fluence. The net production rates resulting from irradiations with 14.8 MeV neutrons are about twice those produced by fission neutrons. In nominally pure crystals, the oxygen-vacancy concentration incurred by the fission-neutron irradiation is higher in crystals with a larger number of inherent impurities (such as iron) due to trapping of interstitials by impurities. Suppression of these defects is observed in MgO:H crystals and attributed to migration of oxygen vacancies to microcavities filled with H 2 gas. In MgO:Li crystals irradiated with neutron fluences below 10 18 n/cm 2 , most of the oxygen vacancies are camouflaged as hydride ions. Nanoindentation experiments show that hardness increases with neutron fluence and is independent of the presence of lithium in the crystal. Comparison between a neutron-irradiated and a thermochemically reduced crystal containing similar concentrations of oxygen vacancies shows that 70% of the neutron-irradiation hardening is produced by interstitials, 30% by oxygen vacancies and a negligible amount by higher-order point defects

Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

International Nuclear Information System (INIS)

Potthoff, H.H.

1983-01-01

Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 μm, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 μm) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations. (author)

Effect of neutron irradiation on single crystal V3Si

International Nuclear Information System (INIS)

Viswanathan, R.; Caton, R.; Cox, D.E.; Guha, A.; Sarachik, M.P.; Smith, F.W.; Testardi, L.R.

1977-01-01

We We have investigated the effect of successive neutron irradiation up to a fluence of approximately 2 x 10 19 n/cm 2 , by measurements of heat capacity, susceptibility, resistivity, acoustic velocity and neutron diffraction in a single crystal V 3 Si. We find that for low level doses (phi t greater than or equal to 3.5 x 10 18 n/cm 2 ) (a) the structural transformation is very sensitive, whereas the suerconducting transition temperature, T/sub c/, is hardly affected, and (b) except for low temperature heat capacity, most of the other measurements show very little change. For the highest fluence of 2 x 10 19 n/cm 2 used to date, the T/sub c/ dropped to 7.5 K with large changes in the linear heat capacity coefficient, magnetic susceptibility and sound velocity. These results are discussed briefly in this paper

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

International Nuclear Information System (INIS)

Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

2015-01-01

Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

2015-08-17

Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Science.gov (United States)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

Femtosecond laser irradiation on Nd:YAG crystal: Surface ablation and high-spatial-frequency nanograting

Science.gov (United States)

Ren, Yingying; Zhang, Limu; Romero, Carolina; Vázquez de Aldana, Javier R.; Chen, Feng

2018-05-01

In this work, we systematically study the surface modifications of femtosecond (fs) laser irradiated Nd:YAG crystal in stationary focusing case (i.e., the beam focused on the target in the steady focusing geometry) or dynamic scanning case (i.e., focused fs-laser beam scanning over the target material). Micro-sized structures (e.g. micro-craters or lines) are experimentally produced in a large scale of parameters in terms of pulse energy as well as (effective) pulse number. Surface ablation of Nd:YAG surface under both processing cases are investigated, involving the morphological evolution, parameter dependence, the ablation threshold fluences and the incubation factors. Meanwhile, under specific irradiation conditions, periodic surface structures with high-spatial-frequency (Investigations on the evolution of nanograting formation and fluence dependence of period are performed. The experimental results obtained under different cases and the comparison between them reveal that incubation effect plays an important role not only in the ablation of Nd:YAG surface but also in the processes of nanograting formation.

Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

International Nuclear Information System (INIS)

Lacroix, Yves; Chung, Sung-Hoon; Sakai, Shiro

2001-01-01

An experiment was performed to explain the appearance of cracks along mesa structures during the processing of GaN device layers grown on sapphire substrates. Micro-Raman spectroscopy was used to measure the position-dependent stress in the GaN layer. We show evidence that the stress at the interface with the substrate may be larger along the mesa structures than that of the as-grown layer, and that this increase in stress can be enough to induce cracks along mesa structures during processing. We report on the formation of cracks that propagate guided by the nonuniformity of the stress induced by the formation of mesa structures in the GaN layer, independent of crystal direction. The understanding of cracking mechanisms has implications in GaN-based device structures that require heteroepitaxial growth of layers with different lattice size and thermal expansion coefficients. [copyright] 2001 American Institute of Physics

Irradiation damage of SiC semiconductor device (I)

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix

Irradiation damage of SiC semiconductor device (I)

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

A neutron method for NDA analysis in the SAPPHIRE Project

International Nuclear Information System (INIS)

Lewis, K.D.

1995-01-01

The implementation of Project SAPPHIRE, the top secret mission to the Republic of Kazakhstan to recover weapons grade nuclear materials, consisted of four major elements: (1) the re-packing of fissile material from Kazakh containers into suitable US containers; (2) nondestructive analyses (NDA) to quantify the U-235 content of each container for Nuclear Criticality Safety and compliance purposes; (3) the packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) the shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of SAPPHIRE operations to analyze uranium/beryllium (U/Be) alloys and compounds for U-235 content

Electric-field gradient characterization at 181Ta impurities in sapphire single crystals

International Nuclear Information System (INIS)

Renteria, M.; Darriba, G.N.; Errico, L.A.; Munoz, E.L.; Eversheim, P.D.

2005-01-01

We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al 2 O 3 single crystals implanted with 181 Hf/ 181 Ta ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with 111 In/ 111 Cd impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

Energy Technology Data Exchange (ETDEWEB)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

2015-07-15

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

Energy Technology Data Exchange (ETDEWEB)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

A study of point defect aggregates in #betta#-irradiated LiF single crystals

International Nuclear Information System (INIS)

Frugoli, P.A.; Pimentel, C.A.F.

1982-11-01

Diffuse X-ray scattering near the Bragg Reflection and Bragg profile analaysis have been made in #betta#-irradiated LiF single crystal X-ray diffractometer. An estimate of the half-width of the diffraction patterns was done and preferential alteration in the profile parameters was observed. Clusters with mean parameter sizes from hundreds to thousands of angstroms were observed but each sample has presented a set of average size values. The nature of clusters was found to be dependent on the #betta#-dose: vacancy at low dose (approximately 10 MRad) and interstitial at high dose (approximately 50 MRad). Some process of coalescence at 50 MRad seems to occur. (Author) [pt

Electron paramagnetic resonance of gamma irradiated (CH3)3NHClO4 and CH3NH3ClO4 single crystals

International Nuclear Information System (INIS)

Yavuz, Metin; Koeksal, Fevzi

1999-01-01

Gamma irradiation damage centers in (CH 3 ) 3 NHClO 4 and CH 3 NH 3 ClO 4 single crystals have been investigated at room temperature by the electron paramagnetic resonance (EPR) technique. It has been found that γ-irradiation produces the (CH 3 ) 3 N + radical in the first, and NH + 3 and ClO 3 radicals in the second compound. The EPR parameters of the observed radicals have been determined and discussed

Study of sapphire probe tip wear when scanning on different materials

International Nuclear Information System (INIS)

Nicolet, Anaïs; Küng, Alain; Meli, Felix

2012-01-01

The accuracy of today's coordinate measuring machines (CMM) has reached a level at which exact knowledge of each component is required. The role of the probe tip is particularly crucial as it is in contact with the sample surface. Understanding how the probe tip wears off will help to narrow the measurement errors. In this work, wear of a sapphire sphere was studied for different scanning conditions and with different sample materials. Wear depth on the probe was investigated using an automated process in situ on the METAS micro-CMM and completed by measurements with an atomic force microscope. We often found a linear dependence between the wear depth and the scan length ranging from 0.5 to 9 nm m −1 , due to variations in scan speed, contact force or sample material. In the case of steel, the wear rate is proportional to the scan speed, while for aluminum several processes seem to interact. A large amount of debris was visible after the tests. Except for aluminum, wear was visible only on the sphere and not on the sample. Sapphire/steel is the worst combination in terms of wear, whereas the combination sapphire/ceramic exhibits almost no wear. (paper)

Femtosecond noncollinear SFG dynamics in autocorrelator setup at low level of photons

Science.gov (United States)

Tenishev, Vladimir P.; Persson, A.; Larsson, J.

2004-06-01

We report here the characteristics of noncollinear sum frequency generation in nonlinear KDP crystals by ultrashort (80 fsec) IR pulses irradiated by the intense Ti:Sapphire laser and their behavior in single shot auto-crosscorrelator (ACC) configuration. In particular we study the case where one of the beams is very weak. Our aim is to develop a procedure to provide delay time signal between light pulses for time resolved pump probe experiments based on the extraction of the phase-matched SHG spatial distribution by means of pulse shape analysis technique. We intend to apply these results to synchronize a weak short-pulse source and an intense Ti:Sapphire laser and to measure the pulse time jitter between them.

Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

International Nuclear Information System (INIS)

Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

2008-01-01

The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

Antireflection coatings for intraocular lenses of sapphire and fianite

Energy Technology Data Exchange (ETDEWEB)

Babin, A.A.; Konoplev, Yu.N.; Mamaev, Yu.A. [Inst. of Applied Physics, Nizhnii Novgorod (Russian Federation)] [and others

1995-10-01

Broadband antireflection coatings for intraocular lenses of sapphire and fianite are calculated and implemented practically. Their residual reflectance in the liquid with a refracting index of 1.336 is below 0.2% from each face virtually over the entire visible region. 7 refs., 2 figs., 2 tabs.

Scintillation of sapphire under particle excitation at low temperature

International Nuclear Information System (INIS)

Amare, J; Beltran, B; Cebrian, S; Coron, N; Dambier, G; GarcIa, E; Gomez, H; Irastorza, I G; Leblanc, J; Luzon, G; Marcillac, P de; Martinez, M; Morales, J; Ortiz de Solorzano, A; Pobes, C; Puimedon, J; Redon, T; RodrIguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A

2006-01-01

The scintillation properties of undoped sapphire at very low temperature have been studied in the framework of the ROSEBUD (Rare Objects SEarch with Bolometers UnDerground) Collaboration devoted to dark matter searches. We present an estimation of its light yield under gamma, alpha and neutron excitation

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

Science.gov (United States)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Optical study on neutron irradiation effect on hexagonal SiC single crystal

Energy Technology Data Exchange (ETDEWEB)

Okada, Moritami; Kimura, Itsurou; Kanazawa, Satoshi; Kanno, Ikuo; Kamiya, Koji [Kyoto Univ. (Japan); Nakata, Toshitake; Watanabe, Masanori; Nakagawa, Masuo; Atobe, Kozo

1996-04-01

It is well known that SiC is a higher radiation resistant semiconductor on comparison with Si and Ge. Recently, on accompanying with advancement of developing program on nuclear fission reactor on space, development of electronic element workable effectively under severe radiation environment is desired. SiC is expected as one of such elements. Therefore, because of considering importance of understanding the effect on fundamental properties of SiC electronic element under radiation environment before its development, some studies on it was executed. In this paper, according to find out induction of interesting defect center in hexagonal 4H- and 6H-SiC single crystals irradiated with reactor neutron on light absorption and SER test, outlines of these experimental results were reported. (G.K.)

Effects of ionizing radiation on struvite crystallization of livestock wastewater

International Nuclear Information System (INIS)

Kim, Tak- Hyun; Nam, Yun-Ku; Joo Lim, Seung

2014-01-01

Livestock wastewater is generally very difficult to be treated by conventional wastewater treatment techniques because it contains high-strength organics (COD), ammonium (NH 4 + ), phosphate (PO 4 3− ) and suspended solids. Struvite crystallization has been recently studied for the simultaneous removal of NH 4 + and PO 4 3− . In this study, gamma ray irradiation was carried out prior to struvite crystallization of the anaerobically digested livestock wastewater. The effects of gamma ray irradiation on the struvite crystallization of livestock wastewater were investigated. As a result, gamma ray irradiation can decrease the concentration of COD, NH 4 + and PO 4 3− contained in the livestock wastewater. This results in not only an enhancement of the struvite crystallization efficiency but also a decrease in the chemical demands for the struvite crystallization of livestock wastewater. - Highlights: • Gamma ray was applied prior to struvite crystallization of livestock wastewater. • Gamma ray resulted in an enhancement of struvite crystallization efficiency. • This is due to the decrease of COD concentration by gamma ray irradiation

Optical waveguides in LiTaO{sub 3} crystals fabricated by swift C{sup 5+} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Liu, Guiyuan [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China); School of Science, Shandong Jianzhu University, Jinan 250101 (China); He, Ruiyun [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China); Akhmadaliev, Shavkat [Institute of Ion Beam and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314 (Germany); Vázquez de Aldana, Javier R. [Laser Microprocessing Group, Universidad de Salamanca, Salamanca 37008 (Spain); Zhou, Shengqiang [Institute of Ion Beam and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314 (Germany); Chen, Feng [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China)

2014-04-01

We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO{sub 3} crystal by using carbon (C{sup 5+}) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C{sup 5+} ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm.

Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

Science.gov (United States)

Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

2018-01-01

The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

Supercontinuum Generation in a Photonic Crystal Fibre

Institute of Scientific and Technical Information of China (English)

YAN Pei-Guang; RUAN Shuang-Chen; LIN Hao-Jia; DU Chen-Lin; YU Yong-Qin; LU Ke-Cheng; YAO Jian-Quan

2004-01-01

@@ Nearly 1000-nm broad continuum from 390nm to 1370nm is generated in a 2-m long photonic crystal fibre. The maximum total power of supercontinuum is measured to be 60mW with the pumping power of 800mW output from a 200-fs Ti:sapphire laser. The evolution of the pumping light into supercontinuum is experimentally studied in detail. It is found that the mechanism for supercontinuum generation has direct relations with Raman effect and soliton effect, and the four-wave mixing plays an important role in the last phase of the supercontinuum generation.

Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

International Nuclear Information System (INIS)

Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

1984-05-01

Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

Science.gov (United States)

Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

2018-04-01

Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

Advanced Neutron Moderators for the ESS

DEFF Research Database (Denmark)

Schönfeldt, Troels

. The main increases in thermal and cold intensity are achieved by upscaling the power density of reactors or proton beam power of spallation sources. Reactor development saturated in the 1960s with the construction of the continuous, compact, high-power-density reactors HFIR, Oak Ridge, and ILL, Grenoble...... crystal. The experiment compares single-crystal sapphire, sapphire powder and void. Sapphire was used, since no other single-crystal candidates (diamond, pyrolytic graphite and lithium uoride) could be obtained within the cost and time constraints of the experiment. Unfortunately, sapphire does...

The influence of crystal structure on ion-irradiation tolerance in the Sm{sub (x)}Yb{sub (2-x)}TiO{sub 5} series

Energy Technology Data Exchange (ETDEWEB)

Aughterson, R.D., E-mail: roa@ansto.gov.au [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia); Lumpkin, G.R.; Reyes, M. de los [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia); Gault, B. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Baldo, P.; Ryan, E. [Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Whittle, K.R. [Centre for Materials and Structures, School of Engineering, The University of Liverpool, Liverpool L69 3GH UK (United Kingdom); Smith, K.L. [Government International and External Relations, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia); Cairney, J.M. [Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia)

2016-04-01

This ion-irradiation study covers the four major crystal structure types in the Ln{sub 2}TiO{sub 5} series (Ln = lanthanide), namely orthorhombic Pnma, hexagonal P6{sub 3}/mmc, cubic (pyrochlore-like) Fd-3m and cubic (fluorite-like) Fm-3m. This is the first systematic examination of the complete Ln{sub 2}TiO{sub 5} crystal system and the first reported examination of the hexagonal structure. A series of samples, based on the stoichiometry Sm{sub (x)}Yb{sub (2-x)}TiO{sub 5} (where x = 2, 1.4, 1, 0.6, and 0) have been irradiated using 1 MeV Kr{sup 2+} ions and characterised in-situ using a transmission electron microscope. Two quantities are used to define ion-irradiation tolerance: critical dose of amorphisation (D{sub c}), which is the irradiating ion dose required for a crystalline to amorphous transition, and the critical temperature (T{sub c}), above which the sample cannot be rendered amorphous by ion irradiation. The structure type plus elements of bonding are correlated to ion-irradiation tolerance. The cubic phases, Yb{sub 2}TiO{sub 5} and Sm{sub 0.6}Yb{sub 1.4}TiO{sub 5}, were found to be the most radiation tolerant, with T{sub c} values of 479 and 697 K respectively. The improved radiation tolerance with a change in symmetry to cubic is consistent with previous studies of similar compounds.

Generation of femtosecond laser pulses at 396 nm in K3B6O10Cl crystal

International Nuclear Information System (INIS)

Zhang Ning-Hua; Huang Hang-Dong; Tian Wen-Long; Zhu Jiang-Feng; Teng Hao; Fang Shao-Bo; Wei Zhi-Yi; Wu Hong-Ping; Pan Shi-Lie

2016-01-01

K 3 B 6 O 10 Cl (KBOC), a new nonlinear optical crystal, shows potential advantages for the generation of deep ultraviolet (UV) light compared with other borate crystals. In this paper we study for the first time the second harmonic generation (SHG) of a femtosecond Ti:sapphire amplifier with this crystal. Laser power is obtained to be as high as 220 mW at the central wavelength of 396 nm with a 1-mm-long crystal, and the maximum SHG conversion efficiency reaches 39.3%. The typical pulse duration is 83 fs. The results show that second harmonic (SH) conversion efficiency has the room to be further improved and that the new nonlinear crystal is very suited to generate the high efficiency deep ultraviolet laser radiation below 266 nm. (paper)

The equilibrium crystal shape of nickel

International Nuclear Information System (INIS)

Meltzman, Hila; Chatain, Dominique; Avizemer, Dan; Besmann, Theodore M.; Kaplan, Wayne D.

2011-01-01

Highlights: → The ECS of pure Ni is completely facetted with both dense and high-index planes. → The partial pressure of oxygen has a significant effect on the surface anisotropy. → The addition of Fe decreased the anisotropy and de-stabilized high-index planes. → During solid dewetting nucleation barriers prevent equilibration of the top facet. - Abstract: The crystal shape of Ni particles, dewetted in the solid state on sapphire substrates, was examined as a function of the partial pressure of oxygen (P(O 2 )) and iron content using scanning and transmission electron microscopy. The chemical composition of the surface was characterized by atom-probe tomography. Unlike other face-centered cubic (fcc) equilibrium crystal shapes, the Ni crystals containing little or no impurities exhibited a faceted shape, indicating large surface anisotropy. In addition to the {1 1 1}, {1 0 0} and {1 1 0} facets, which are usually present in the equilibrium crystal shape of fcc metals, high-index facets were identified such as {1 3 5} and {1 3 8} at low P(O 2 ), and {0 1 2} and {0 1 3} at higher P(O 2 ). The presence of iron altered the crystal shape into a truncated sphere with only facets parallel to denser planes. The issue of particle equilibration is discussed specifically for the case of solid-state dewetting.

Influence of interfacial reactions on the fiber push-out behavior in sapphire fiber-reinforced-NiAl(Yb) composites

International Nuclear Information System (INIS)

Tewari, S.N.; Asthana, R.; Tiwari, R.; Bowman, R.R.

1993-01-01

The influence of microstructure of the fiber-matrix interface on the fiber push-out behavior has been examined in sapphire fiber-reinforced NiAl and NiAl(Yb) matrix composites synthesized using powder metallurgy techniques combined with zone directional solidification (DS). The push-out stress-displacement curves were observed to consist of an initial 'pseudoelastic' region, wherein the stress increased linearly with displacement, followed by an 'inelastic' region, where the slope of the stress-displacement plot decreased until a maximum stress was reached, and the subsequent stress drop to a constant 'frictional' stress. Chemical reaction between the fiber and the matrix resulted in higher interfacial shear strength in powder cloth processed sapphire-NiAl(Yb) composites as compared to the sapphire-NiAl composites. Grain boundaries in contact with the fibers on the back face of the push-out samples were the preferred sites for crack nucleation in PM composites. The frictional stress was independent of the microstructure and processing variables for NiAl composites, but showed strong dependence on these variables for the NiAl(Yb) composites. The DS processing enhanced the fiber-matrix interfacial shear strength of feedstock PM-NiAl/sapphire composites. However, it reduced the interfacial shear strength of PM-NiAl(Yb)-sapphire composites

Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

International Nuclear Information System (INIS)

Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

2004-01-01

Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

Science.gov (United States)

Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

2013-12-02

We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

Design of all solid state tunable single-mode Ti: sapphire laser for nuclear industry

International Nuclear Information System (INIS)

Lee, J.H.; Nam, S.M.; Lee, Y.J.; Lee, J.M.; Horn, Roland E.; Wendt, Klaus

1999-01-01

We designed a Ti:Sapphire laser pumped by a diode laser pumped solid state laser (DPSSL). The DPSSL was intra-cavity frequency doubled and it had 20 W output power. The Ti:Sapphire laser was designed for single longitudinal mode lasing. For single mode lasing, the laser used several solid etalons. We simulated temporal evolution of the laser pulse and single pass amplification rate of the photons in each modes from rate equations. From the result, we found that single mode lasing is viable in this cavity

ESR study of irradiated single crystals of the cocrystalline complex of cytidine: Salicylic acid

International Nuclear Information System (INIS)

Close, D.M.; Sagstuen, E.

1983-01-01

Irradiation at 77 K of single crystals of the 1:1 complex of cytidine and salicylic acid produces a phenoxyl radical formed by oxidation of the salicylic acid. Anisotropic hyperfine coupling tensors have been determined for this radical which are associated with the para and ortho hydrogens. No cytidine oxidation products (alkoxy or hydroxyalkyl radicals) were observed at 77 K. Following the decay of the phenoxyl radical at room temperature, four radicals were detected. These include the cytosine 5--yl and 6--yl radicals, formed by H addition to the cytosine ring, and an anisotropic doublet. By UV irradiation at room temperature, it is possible to convert a significant fraction of 6-yl radicals into 5-yl radicals. Hyperfine coupling and g tensors determined for the anisotropic doublet indicate that this radical is formed in the C/sub 1'/-C/sub 2'/ region of the sugar moiety. These results indicate a shift in radiation damage away from the salicylic acid upon warming, and show that the radiation chemistry of the cocrystalline complex is different from that of the isolated bases

Characterization of un-irradiated and irradiated reactor graphite; Karakterizacija neozracenog i ozracenog reaktorskog grafita

Energy Technology Data Exchange (ETDEWEB)

Marinkovic, S [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

1965-11-15

This report contains three parts: characterization of Yugoslav nuclear graphite development of methods and obtained results, characterization of un-irradiated and irradiated domestic nuclear graphite; calculation of electrical conductivity changes due to vacancies in the graphite crystal lattice.

Widely tunable femtosecond solitonic radiation in photonic crystal fiber cladding

DEFF Research Database (Denmark)

Peng, J. H.; Sokolov, A. V.; Benabid, F.

2010-01-01

We report on a means to generate tunable ultrashort optical pulses. We demonstrate that dispersive waves generated by solitons within the small-core features of a photonic crystal fiber cladding can be used to obtain femtosecond pulses tunable over an octave-wide spectral range. The generation...... process is highly efficient and occurs at the relatively low laser powers available from a simple Ti:sapphire laser oscillator. The described phenomenon is general and will play an important role in other systems where solitons are known to exist....

The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

Science.gov (United States)

Aguilar-Santillan, Joaquin

2013-05-01

The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

International Nuclear Information System (INIS)

Makino, Hisao; Song, Huaping; Yamamoto, Tetsuya

2014-01-01

The Ga-doped ZnO (GZO) films deposited on glass and c-plane sapphire substrates have been comparatively studied in order to explore the role of grain boundaries in electrical properties. The influences of oxygen gas flow rates (OFRs) during the deposition by ion-plating were examined. The dependences of carrier concentration, lattice parameters, and characteristic of thermal desorption of Zn on the OFR showed common features between glass and sapphire substrates, however, the Hall mobility showed different behavior. The Hall mobility of GZO films on glass increased with increasing OFR of up to 15 sccm, and decreased with further increasing OFR. On the other hand, the Hall mobility of GZO films on c-sapphire increased for up to 25 sccm. The role of grain boundary in polycrystalline GZO films has been discussed. - Highlights: • Ga-doped ZnO films were deposited on glass and c-sapphire by ion-plating. • The epitaxial growth on c-sapphire was confirmed by X-ray diffraction. • Dependence of Hall mobility showed different tendency between glass and sapphire. • Grain boundaries influence transport properties at high O 2 gas flow rate

Pyroelectric field assisted ion migration induced by ultraviolet laser irradiation and its impact on ferroelectric domain inversion in lithium niobate crystals

International Nuclear Information System (INIS)

Ying, C. Y. J.; Mailis, S.; Daniell, G. J.; Steigerwald, H.; Soergel, E.

2013-01-01

The impact of UV laser irradiation on the distribution of lithium ions in ferroelectric lithium niobate single crystals has been numerically modelled. Strongly absorbed UV radiation at wavelengths of 244–305 nm produces steep temperature gradients which cause lithium ions to migrate and result in a local variation of the lithium concentration. In addition to the diffusion, here the pyroelectric effect is also taken into account which predicts a complex distribution of lithium concentration along the c-axis of the crystal: two separated lithium deficient regions on the surface and in depth. The modelling on the local lithium concentration and the subsequent variation of the coercive field are used to explain experimental results on the domain inversion of such UV treated lithium niobate crystals

[Grain boundary and interface kinetics during ion irradiation

International Nuclear Information System (INIS)

Atwater, H.A.

1991-01-01

Proposed here is renewed support of a research program focused on interface motion and phase transformation during ion irradiation, with emphasis on elemental semiconductors. Broadly speaking, the aims of this program are to explore defect kinetics in amorphous and crystalline semiconductors, and to relate defect dynamics to interface motion and phase transformations. Over the last three years, we initiated a program under DOE support to explore crystallization and amorphization of elemental semiconductors under irradiation. This research has enabled new insights about the nature of defects in amorphous semiconductors and about microstructural evolution in the early stages of crystallization. In addition, we have demonstrated almost arbitrary control over the relative rates of crystal nucleation and crystal growth in silicon. As a result, the impinged grain microstructure of thin (100 nm) polycrystalline films crystallized under irradiation can be controlled with grain sizes ranging from a few nanometers to several micrometers, which may have interesting technological implications

Description of Project Sapphire. Revision 1

International Nuclear Information System (INIS)

Taylor, R.G.

1995-01-01

The mission of Project Sapphire was to repackage approximately 600 kg of highly enriched uranium (HEU) in the Republic of Kazakhstan into internationally acceptable shipping packages and transport the material to a storage location in the United States. There were four material types to be repackaged: metal; oxide; uranium/beryllium (U/Be) alloy; and residues from U/Be alloy production. Seven major steps described in this report were necessary for successful execution of the project: planning and training; readiness assessment; deployment; set up; process; take down; and transport. Nuclear criticality safety especially affected several of these steps

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Energy Technology Data Exchange (ETDEWEB)

Voronenkov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Y. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

Energy Technology Data Exchange (ETDEWEB)

Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

2015-06-01

Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

Interfacial thermal resistance between high-density polyethylene (HDPE) and sapphire

International Nuclear Information System (INIS)

Zheng Kun; Ma Yong-Mei; Wang Fo-Song; Zhu Jie; Tang Da-Wei

2014-01-01

To improve the thermal conductivity of polymeric composites, the numerous interfacial thermal resistance (ITR) inside is usually considered as a bottle neck, but the direct measurement of the ITR is hardly reported. In this paper, a sandwich structure which consists of transducer/high density polyethylene (HDPE)/sapphire is prepared to study the interface characteristics. Then, the ITRs between HDPE and sapphire of two samples with different HDPE thickness values are measured by time-domain thermoreflectance (TDTR) method and the results are ∼ 2 × 10 −7 m 2 ·K·W −1 . Furthermore, a model is used to evaluate the importance of ITR for the thermal conductivity of composites. The model's analysis indicates that reducing the ITR is an effective way of improving the thermal conductivity of composites. These results will provide valuable guidance for the design and manufacture of polymer-based thermally conductive materials. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Wetting behavior of liquid Fe-C-Ti alloys on sapphire

International Nuclear Information System (INIS)

Gelbstein, M.; Froumin, N.; Frage, N.

2008-01-01

Wetting behavior in the (Fe-C-Ti)/sapphire system was studied at 1823 K. The wetting angle between sapphire and Fe-C alloys is higher than 90 deg. (93 deg. and 105 deg. for the alloys with 1.4 and 3.6 at.% C, respectively). The presence of Ti improves the wetting of the iron-carbon alloys, especially for the alloys with carbon content of 3.6 at.%. The addition of 5 at.% Ti to Fe-3.6 at.% C provides a contact angle of about 30 deg., while the same addition to Fe-1.4 at.% C decreases the wetting angle to 70 deg. only. It was established that the wetting in the systems is controlled by the formation of a titanium oxicarbide layer at the interface, which composition and thickness depend on C and Ti contents in the melt. The experimental observations are well accounted for by a thermodynamic analysis of the Fe-Ti-Al-O-C system

Phase field modeling of twinning in indentation of transparent crystals

International Nuclear Information System (INIS)

Clayton, J D; Knap, J

2011-01-01

Continuum phase field theory is applied to study elastic twinning in calcite and sapphire single crystals subjected to indentation loading by wedge-shaped indenters. An order parameter is associated with the magnitude of stress-free twinning shear. Geometrically linear and nonlinear theories are implemented and compared, the latter incorporating neo-Hookean elasticity. Equilibrium configurations of deformed and twinned crystals are attained numerically via direct energy minimization. Results are in qualitative agreement with experimental observations: a long thin twin forms asymmetrically under one side of the indenter, the tip of the twin is sharp and the length of the twin increases with increasing load. Qualitatively similar results are obtained using isotropic and anisotropic elastic constants, though the difference between isotropic and anisotropic results is greater in sapphire than in calcite. Similar results are also obtained for nanometer-scale specimens and millimeter-scale specimens. Indentation forces are greater in the nonlinear model than the linear model because of the increasing tangent bulk modulus with increasing pressure in the former. Normalized relationships between twin length and indentation force are similar for linear and nonlinear theories at both nanometer and millimeter scales. Twin morphologies are similar for linear and nonlinear theories for indentation with a 90° wedge. However, in the nonlinear model, indentation with a 120° wedge produces a lamellar twin structure between the indenter and the long sharp primary twin. This complex microstructure is not predicted by the linear theory

Dose dependence of nano-hardness of 6H-SiC crystal under irradiation with inert gas ions

Science.gov (United States)

Yang, Yitao; Zhang, Chonghong; Su, Changhao; Ding, Zhaonan; Song, Yin

2018-05-01

Single crystal 6H-SiC was irradiated by inert gas ions (He, Ne, Kr and Xe ions) to various damage levels at room temperature. Nano-indentation test was performed to investigate the hardness change behavior with damage. The depth profile of nano-hardness for 6H-SiC decreased with increasing depth for both the pristine and irradiated samples, which was known as indentation size effect (ISE). Nix-Gao model was proposed to determine an asymptotic value of nano-hardness by taking account of ISE for both the pristine and irradiated samples. In this study, nano-hardness of the irradiated samples showed a strong dependence on damage level and showed a weak dependence on ions species. From the dependence of hardness on damage, it was found that the change of hardness demonstrated three distinguishable stages with damage: (I) The hardness increased with damage from 0 to 0.2 dpa and achieved a maximum of hardening fraction ∼20% at 0.2 dpa. The increase of hardness in this damage range was contributed to defects produced by ion irradiation, which can be described well by Taylor relation. (II) The hardness reduced rapidly with large decrement in the damage range from 0.2 to 0.5 dpa, which was considered to be from the covalent bond breaking. (III) The hardness reduced with small decrement in the damage range from 0.5 to 2.2 dpa, which was induced by extension of the amorphous layer around damage peak.

Electric-field gradient characterization at {sup 181}Ta impurities in sapphire single crystals

Energy Technology Data Exchange (ETDEWEB)

Renteria, M.; Darriba, G.N.; Errico, L.A.; Munoz, E.L. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Eversheim, P.D. [Helmholtz-Institut fuer Strahlen-und Kernphysik (ISKP), Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany)

2005-07-01

We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al{sub 2}O{sub 3} single crystals implanted with {sup 181}Hf/{sup 181}Ta ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with {sup 111}In/{sup 111}Cd impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Preparation and characterisation of radiation hard PbWO4 crystal scintillator

International Nuclear Information System (INIS)

Sabharwal, S.C.; Desai, D.G.; Sangeeta; Karandikar, S.C.; Chauhan, A.K.; Sangiri, A.K.; Keshwani, K.S.; Ahuja, M.N.

1996-01-01

The selective loss of one of the crystal constituents is found to be responsible for the yellowish coloration of PbWO 4 crystals. However, using the already pulled crystals as the starting charge for the subsequent growth, colorless crystals can be grown. The crystals exhibiting excellent transmission characteristics have been grown employing a low temperature gradient, a moderate rotation rate of 15 rpm and a pull speed of 1 mm/h. The colored crystals show some radiation damage on gamma irradiation, while the colorless ones remain unaffected even for irradiation doses as high as 10 Mrad. Both the types of crystals show the presence of weak thermoluminescence (TL) emission when high irradiation doses (similar 10 Mrad) are given. Only one TL glow peak is obtained in both the cases but the peak temperatures are different. The emission centers responsible for the TL emission are found to be the ones which give rise to the scintillation emission in the crystal. (orig.)

Electron spin resonance and E.N.D.O.R. double resonance study of free radicals produced by gamma irradiation of imidazole single crystals

International Nuclear Information System (INIS)

Lamotte, B.

1970-01-01

Gamma irradiation of imidazole single crystals at 300 deg. K gives two radicals. Identification and detailed studies of their electronic and geometric structure have been made by ESR and ENDOR techniques. A study of the hydrogen bonded protons hyperfine tensor is made and let us conclude to the inexistence of movement and tunneling of these protons. The principal low temperature radical, produced by gamma irradiation at 77 deg. K has been also studied by ESR and a model has been proposed. (author) [fr

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

Science.gov (United States)

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

International Nuclear Information System (INIS)

Huang Huan; Li Simian; Zhai Fengxiao; Wang Yang; Lai Tianshu; Wu Yiqun; Gan Fuxi

2011-01-01

Highlights: → We reported crystallization dynamics of a novel SiSb phase change material. → We measured optical constants of as-deposited and irradiated SiSb areas. → Optical properties of as-deposited and irradiated SiSb thin film were compared. → Crystallization of irradiated SiSb was confirmed by using AFM and micro-Raman spectra. → The heat conduction effect of lower metal layer of multi-layer films was studied. - Abstract: Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.

Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

Science.gov (United States)

Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

2016-03-01

Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

Lattice dynamics of sapphire (corundum). Pt. 2

International Nuclear Information System (INIS)

Kappus, W.

1975-01-01

Theoretical models of the lattice dynamics of sapphire (α - Al 2 O 3 ), based on the assumption of rigid ions, have been fitted to measured phonons at the Gamma-point of the Brillouin zone. Short range interactions were taken into account by assuming 2-body interactions between touching ions. Additional 3-body interactions could not improve the fit significantly. Calculated dispersion curves are presented and compared with inelastic neutron scattering data. A good agreement for branches along the trigonal axis can be stated. (orig.) [de

Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio, E-mail: ogino-toshio-rx@ynu.ac.jp

2017-02-28

Highlights: • Local hydrophobicity of phase-separated sapphire (0001) surfaces was investigated. • These surfaces are featured by coexistence of hydrophilic and hydrophobic domains. • Each domain was characterized by colloidal probe atomic force microscopy in water. • Both domains can be distinguished by adhesive forces of the probe to the surfaces. • Characterization in aqueous environment is important in bio-applications of sapphire. - Abstract: Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO{sub 2} probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

Light yield of a CsI(Tl) crystal under irradiation by protons with the energy from 3 to 15 MeV

International Nuclear Information System (INIS)

Dorchoman, D.; Konstantin, M.; Lazarovich, D.; Muntyanu, I.; Oganesyan, K.O.; Porokhovoj, S.Yu.

1976-01-01

Measurement results are presented of light yield in CsI(Tl) crystals at the irradiation by protons with the energy from 3 to 15 MeV. Plates of 100x100x2 mm size are used as CsI(Tl) scintillator samples. A brief analysis of possible sistematic errors is given which allows to estimate the total error upon the light yield valve determination equal to 0,5%. Measurement results of crystal light yield show that the dependence of CsI(Tl) light yield on proton energy is described by the straight line passing through the origin

Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

International Nuclear Information System (INIS)

Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

2011-01-01

Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

International Nuclear Information System (INIS)

Gontad, F.; Conde, J.C.; Filonovich, S.; Cerqueira, M.F.; Alpuim, P.; Chiussi, S.

2013-01-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p + -nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm 2 is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm 2 promote partial crystallization of the amorphous structures

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

Energy Technology Data Exchange (ETDEWEB)

Gontad, F., E-mail: fran_gontad@yahoo.es [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Conde, J.C. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Filonovich, S.; Cerqueira, M.F.; Alpuim, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Chiussi, S. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain)

2013-06-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p{sup +}-nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm{sup 2} is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm{sup 2} promote partial crystallization of the amorphous structures.

Microscopic origin of the optical processes in blue sapphire.

Science.gov (United States)

Bristow, Jessica K; Parker, Stephen C; Catlow, C Richard A; Woodley, Scott M; Walsh, Aron

2013-06-11

Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

Microscopic origin of the optical processes in blue sapphire

OpenAIRE

Bristow, JK; Parker, SC; Catlow, CRA; Woodley, SM; Walsh, A

2013-01-01

Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

Measurement of DC electrical conductivity of alumina during spallation-neutron irradiation

International Nuclear Information System (INIS)

Farnum, E.H.; Clinard, F.W. Jr.; Kennedy, J.C. III; Sommer, W.F.; Dammeyer, M.D.

1993-01-01

An irradiation experiment was carried out during the summer of 1992 at the Los Alamos Spallation Radiation Effects Facility (LASREF). In situ measurements of electrical conductivity in alumina, sapphire and mineral-insulated electrical cables were made at 640 degrees C, 590 degrees C and 400 degrees C. Both DC and AC (100 Hz to 1 MHz) measurements were made to fluence of approximately 3 x 10 23 n/m 2 . Optical absorption from 200 nm to 800 nm was measured in pure silica - and OH-doped silica-core optical fibers during the irradiation. A large number of passive samples were included in the irradiation, some at the furnace temperatures and some at ambient temperature. This report describes preliminary analysis of the DC conductivity measurements. The AC measurements are analyzed in the companion report. All samples are being recovered for post-irradiation examination as this report is being written in May, 1993. Final analysis of the conductivity data awaits the results of measured fluence from activation foils and will be published at ICFRM-6

UV response on dielectric properties of nano nematic liquid crystal

Directory of Open Access Journals (Sweden)

Kamal Kumar Pandey

2018-03-01

Full Text Available In this work, we investigate the effect of UV light irradiation on the dielectric parameters of nematic liquid crystal (5CB and ZnO nanoparticles dispersed liquid crystal. With addition of nanoparticles in nematic LC are promising new materials for a variety of application in energy harvesting, displays and photonics including the liquid crystal laser. To realize many applications, however we optimize the properties of liquid crystal and understand how the UV light irradiation interact the nanoparticles and LC molecules in dispersed/doped LC. The dielectric permittivity and loss factor have discussed the pure nematic LC and dispersed/doped system after, during and before UV light exposure. The dielectric relaxation spectroscopy was carried out in the frequency range 100 Hz–10 MHz in the nematic mesophase range. Keywords: Dielectric permittivity, Relaxation frequency, Nematic liquid crystal, UV light irradiation

Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

Directory of Open Access Journals (Sweden)

Sheng-Fu Yu

2012-01-01

Full Text Available The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs grown on patterned sapphire substrates (PSSs with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%, 1.1 (57%, 1.5 (81%, and 1.9 (91% μm at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

Sapphire/TiAl composites - structure and properties

International Nuclear Information System (INIS)

Povarova, K.B.; Antonova, A.V.; Mileiko, S.T.; Sarkissyan, N.S.

2001-01-01

Ti-Al-intermetallic-based alloys with lamellar microstructure, -γ(TiAl) +α 2 (Ti 3 Al) are characterized by a high melting point of 1460 o C, a low density of ∼3.9 g/cm 3 , a high gas corrosion resistance up to a temperature of about 900 o C, a high creep resistance up to a temperature of about 800 o C, and a sufficiently high fracture toughness at low temperatures, up to 30 Mpa x m 1/2 . Hence, they are considered as excellent matrices for fibres of high melting point. Unlike well-developed SiC/TiAl composites, which have an obvious upper limit for the usage temperature due to SiC/TiAl interaction, Sapphire/TiAl composites remain nearly unknown because fibres to be used in such composites have not been really available. At the present time, such fibres are developed in Solid State Physics Inst. of RAS. The results of preliminary creep tests of Al 2 O 3 /TiAl composites obtained by using pressure casting have shown that usage of such composite systems shifts the temperature limit for light structural materials in terms of creep resistance to, at least, 1050 o C: creep strength on 100 h time base reaches 120 MPa at that temperature. It occurs also that Sapphire-fibres/TiAl-matrix composite specimens have an increased gas corrosion resistance by more than one order of the magnitudes as compared with that of the matrix alloy. (author)

Crystallization in metglass: growth mechanism of crystals and radiation effects in Fe Ni P B

International Nuclear Information System (INIS)

Limoge, Y.; Barbu, A.

1981-08-01

Studying crystallization mechanisms and transport properties in amorphous metallic alloys we propose a model for systems wich are displaying eutectoid decomposition. Bringing together self diffusion, electron microscopy and electron irradiation experiments on a Fe Ni P B alloys we have shown that crystallization controlled by interfacial diffusion at the crystal surface can explain all the observed features of the experimental behaviour

Irradiation softening in pure iron single crystals

International Nuclear Information System (INIS)

Meshii, M.

1975-01-01

The characteristics of irradiation softening in Fe were studied. Results show that irradiation softening effect can be explained by the intrinsic mechanism, namely, the interaction of screw dislocations with randomly dispersed interstitials. At least some of the solid solution softening phenomena observed in alloys can be explained by the same mechanism. However, the alloying may be accompanied by an additional effect such as solute segregation to dislocations which may also strongly affect the yield stress. This effect may mask the softening effect partially or totally. Changes in the dislocation structure of deformed specimens caused by alloying, which are often reported in electron microscopic investigations, support this contention. The alloying, therefore, may not be as good as the low temperature irradiation in studying the effect of random solutes on dislocation motion and yield stress

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co n-Si crystals

Directory of Open Access Journals (Sweden)

G.P. Gaidar

2018-03-01

Full Text Available The dose dependence of tensoresistance X /0, which was measured at the symmetrical orientation of the deformation axis (compression relatively to all isoenergetic ellipsoids both in the initial and in -irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence X /0 = f (Х. Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out and the mechanical stress Х was applied.

Structure of the Dislocation in Sapphire

DEFF Research Database (Denmark)

Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

1976-01-01

Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

Science.gov (United States)

Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

2017-11-01

The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

Cation disorder in high-dose, neutron-irradiated spinel

International Nuclear Information System (INIS)

Sickafus, K.E.; Larson, A.C.; Yu, N.; Nastasi, M.; Hollenberg, G.W.; Garner, F.A.; Bradt, R.C.

1994-08-01

The objective of this effort is to determine whether MgAl 2 O 4 spinel is a suitable ceramic for fusion applications. Here, the crystal structures of MgAl 2 O 4 spinel single crystals irradiated to high neutron fluences [>5·10 26 n/m 2 (E n > 0.1 MeV)] were examined by neutron diffraction. Crystal structure refinement of the highest dose sample indicated that the average scattering strength of the tetrahedral crystal sites decreased by ∼ 20% while increasing by ∼ 8% on octahedral sites. Since the neutron scattering length for Mg is considerably larger than for Al, this results is consistent with site exchange between Mg 2+ ions on tetrahedral sites and Al 3+ ions on octahedral sites. Least-squares refinements also indicated that, in all irradiated samples, at least 35% of Mg 2+ and Al 3+ ions in the crystal experienced disordering replacements. This retained dpa on the cation sublattices is the largest retained damage ever measured in an irradiated spinel material

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

International Nuclear Information System (INIS)

Okada, Narihito; Tadatomo, Kazuyuki

2012-01-01

Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

Science.gov (United States)

Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

2015-08-01

With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

Optical waveguides in Nd:GdVO4 crystals fabricated by swift N3+ ion irradiation

Science.gov (United States)

Dong, Ningning; Yao, Yicun; Chen, Feng

2012-12-01

Optical planar waveguides have been manufactured in Nd:GdVO4 crystal by swift N3+ ions irradiation at fluence of 1.5 × 1014 ions/cm2. A typical "barrier"-style refractive index profile was formed and the light can be well confined in the waveguide region. The modal distribution of the guided modes obtained from numerical calculation has a good agreement with the experimental modal distribution. The measured photoluminescence spectra revealed that the fluorescence properties of the Nd3+ ions have been modified to some extent in the waveguide's volume. The propagation loss of the planar waveguide can decrease to lower than 1 dB/cm after adequate annealing.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

Science.gov (United States)

Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

2018-05-01

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

The deconvolution of Doppler-broadened positron annihilation measurements using fast Fourier transforms and power spectral analysis

International Nuclear Information System (INIS)

Schaffer, J.P.; Shaughnessy, E.J.; Jones, P.L.