Detection of solar neutrinos with a torsion balance with sapphire crystal

Science.gov (United States)

Cruceru, M.; Nicolescu, G.

2018-01-01

The solar neutrinos (antineutrinos) are detected with a dedicated torsion balance in the case when they interact coherently on stiff crystals (sapphire with high Debye temperature ∼1000K and lead with ∼100K Debye temperature). The balance consists in two equal masses of lead and sapphire, of 25g. An autocollimator coupled to this balance measures small rotation angles of the balance. The force with which neutrino flux interacts with these crystals is between 10-5 dyn and 10-8 dyn, comparable with that reported in Weber’s experiments [1]. A diurnal effect is observed for solar neutrinos due to the rotation of the Earth around its own axes. The solar neutrino flux obtained at the site of our experiment is ∼3.8*1010neutrinos/cm2*s [2]. Experimental data for neutrinos signals from this high sensitivity torsion balance are presented and commented [3].

Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

Science.gov (United States)

Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

2018-03-01

The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

Thermal neutron scattering kernels for sapphire and silicon single crystals

International Nuclear Information System (INIS)

Cantargi, F.; Granada, J.R.; Mayer, R.E.

2015-01-01

Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

Origin for the shape of Au small crystals formed inside sapphire by ion implantation

International Nuclear Information System (INIS)

Ohkubo, M.; Hioki, T.

1989-01-01

In ion-implanted oxides, precipitation is usually formed except the case of forming solid solution. The precipitation comprises the metallic particles of implanted atoms, the oxide of implanted atoms, the metal of matrix elements, the compound of implanted atoms and matrix and so on. In particular, the metallic particles of implanted atoms are frequently faceted. From the facets, the equilibrium shape of crystals can be imagined. The equilibrium shape is determined so that the surface free energy is to be minimized. However, the shape of the metallic particles precipitated inside oxides should not be such equilibrium shape because they come in contact with foreign crystals. As the result, in the precipitation phenomena induced by ion implantation, the crystal structures of precipitated particles and substrates, the crystallographic relation between two crystals, interfacial energy and so on must be taken in consideration. In this paper, the report is made on the shape of the metallic gold particles formed inside sapphires by ion implantation that it was caused by only the crystal habit of sapphires regardless of the above-mentioned complexity. (K.I.)

MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

2014-07-15

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermal stress resistance of ion implanted sapphire crystals

International Nuclear Information System (INIS)

Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

1999-01-01

Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

Numerical simulation of terahertz-wave propagation in photonic crystal waveguide based on sapphire shaped crystal

International Nuclear Information System (INIS)

Zaytsev, Kirill I; Katyba, Gleb M; Mukhina, Elena E; Kudrin, Konstantin G; Karasik, Valeriy E; Yurchenko, Stanislav O; Kurlov, Vladimir N; Shikunova, Irina A; Reshetov, Igor V

2016-01-01

Terahertz (THz) waveguiding in sapphire shaped single crystal has been studied using the numerical simulations. The numerical finite-difference analysis has been implemented to characterize the dispersion and loss in the photonic crystalline waveguide containing hollow cylindrical channels, which form the hexagonal lattice. Observed results demonstrate the ability to guide the THz-waves in multi-mode regime in wide frequency range with the minimal power extinction coefficient of 0.02 dB/cm at 1.45 THz. This shows the prospectives of the shaped crystals for highly-efficient THz waveguiding. (paper)

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

Science.gov (United States)

Carroz, L.; Duffar, T.

2018-05-01

In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

Science.gov (United States)

Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

2016-11-21

The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

Directory of Open Access Journals (Sweden)

Keisuke Iwano

2016-10-01

Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

International Nuclear Information System (INIS)

He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

2003-01-01

Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

Science.gov (United States)

Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

2017-09-01

Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

High performance sapphire windows

Science.gov (United States)

Bates, Stephen C.; Liou, Larry

1993-02-01

High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

DEFF Research Database (Denmark)

Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

2005-01-01

In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

2004-09-01

The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

International Nuclear Information System (INIS)

Okada, Narihito; Tadatomo, Kazuyuki

2012-01-01

Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process

Science.gov (United States)

Nguyen, Tran Phu; Chuang, Hsiao-Tsun; Chen, Jyh-Chen; Hu, Chieh

2018-02-01

In this study, the effect of the power history on the shape of a sapphire crystal and the thermal stress during the Kyropoulos process are numerically investigated. The simulation results show that the thermal stress is strongly dependent on the power history. The thermal stress distributions in the crystal for all growth stages produced with different power histories are also studied. The results show that high von Mises stress regions are found close to the seed of the crystal, the highly curved crystal surface and the crystal-melt interface. The maximum thermal stress, which occurs at the crystal-melt interface, increases significantly in value as the crystal expands at the crown. After this, there is reduction in the maximum thermal stress as the crystal lengthens. There is a remarkable enhancement in the maximum von Mises stress when the crystal-melt interface is close to the bottom of the crucible. There are two obvious peaks in the maximum Von Mises stress, at the end of the crown stage and in the final stage, when cracking defects can form. To alleviate this problem, different power histories are considered in order to optimize the process to produce the lowest thermal stress in the crystal. The optimal power history is found to produce a significant reduction in the thermal stress in the crown stage.

Response of Seven Crystallographic Orientations of Sapphire Crystals to Shock Stresses of 16 to 86 GPa

OpenAIRE

Kanel, G. I.; Nellis, W. J.; Savinykh, A. S.; Razorenov, S. V.; Rajendran, A. M.

2009-01-01

Shock-wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations were measured with time-resolved VISAR interferometry at shock stresses in the range 16 to 86 GPa. Shock propagation was normal to the surface of each cut. The angle between the c-axis of the hexagonal crystal structure and the direction of shock propagation varied from 0 for c-cut up to 90 degrees for m-cut in the basal plane. Based on published shock-induced transparencies, shock-induced optical ...

Growth optimization for thick crack-free GaN layers on sapphire with HVPE

Energy Technology Data Exchange (ETDEWEB)

Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

2005-05-01

Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

International Nuclear Information System (INIS)

Vetrov, V. N.; Ignatenkov, B. A.

2013-01-01

The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

Visual observation of gas hydrates nucleation and growth at a water - organic liquid interface

Science.gov (United States)

Stoporev, Andrey S.; Semenov, Anton P.; Medvedev, Vladimir I.; Sizikov, Artem A.; Gushchin, Pavel A.; Vinokurov, Vladimir A.; Manakov, Andrey Yu.

2018-03-01

Visual observation of nucleation sites of methane and methane-ethane-propane hydrates and their further growth in water - organic liquid - gas systems with/without surfactants was carried out. Sapphire Rocking Cell RCS6 with transparent sapphire cells was used. The experiments were conducted at the supercooling ΔTsub = 20.2 °C. Decane, toluene and crude oils were used as organics. Gas hydrate nucleation occurred on water - metal - gas and water - sapphire - organic liquid three-phase contact lines. At the initial stage of growth hydrate crystals rapidly covered the water - gas or water - organics interfaces (depending on the nucleation site). Further hydrate phase accrete on cell walls (sapphire surface) and into the organics volume. At this stage, growth was accompanied by water «drawing out» from under initial hydrate film formed at water - organic interface. Apparently, it takes place due to water capillary inflow in the reaction zone. It was shown that the hydrate crystal morphology depends on the organic phase composition. In the case of water-in-decane emulsion relay hydrate crystallization was observed in the whole sample, originating most likely due to the hydrate crystal intergrowth through decane. Contacts of such crystals with adjacent water droplets result in rapid hydrate crystallization on this droplet.

Order in nanometer thick intergranular films at Au-sapphire interfaces

Energy Technology Data Exchange (ETDEWEB)

Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2011-08-15

Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

International Nuclear Information System (INIS)

Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

2013-01-01

We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

Energy Technology Data Exchange (ETDEWEB)

Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

1996-02-11

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

International Nuclear Information System (INIS)

Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

1996-01-01

It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

Directory of Open Access Journals (Sweden)

X. Wei

2012-01-01

Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

Science.gov (United States)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

Energy Technology Data Exchange (ETDEWEB)

Luca, M

2007-07-15

Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

International Nuclear Information System (INIS)

Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

2014-01-01

One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

Science.gov (United States)

Akazawa, Housei; Ueno, Yuko

2014-10-01

We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

Sapphire: A kinking nonlinear elastic solid

Science.gov (United States)

Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

2006-03-01

Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

International Nuclear Information System (INIS)

Yi, Jong Hoon; Horn, Roland; Wendt, K.

2001-01-01

We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

Science.gov (United States)

Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

2017-05-01

Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2012-01-01

. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

Semipolar GaN grown on m-plane sapphire using MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

2008-07-01

We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of dopamine crystals

Energy Technology Data Exchange (ETDEWEB)

Patil, Vidya, E-mail: vidya.patil@ruparel.edu; Patki, Mugdha, E-mail: mugdha.patki@ruparel.edu [D. G. Ruparel College, Senapati Bapat Marg, Mahim, Mumbai – 400 016 (India)

2016-05-06

Many nonlinear optical (NLO) crystals have been identified as potential candidates in optical and electro-optical devices. Use of NLO organic crystals is expected in photonic applications. Hence organic nonlinear optical materials have been intensely investigated due to their potentially high nonlinearities, and rapid response in electro-optic effect compared to inorganic NLO materials. There are many methods to grow organic crystals such as vapor growth method, melt growth method and solution growth method. Out of these methods, solution growth method is useful in providing constraint free crystal. Single crystals of Dopamine have been grown by evaporating the solvents from aqueous solution. Crystals obtained were of the size of orders of mm. The crystal structure of dopamine was determined using XRD technique. Images of crystals were obtained using FEG SEM Quanta Series under high vacuum and low KV.

Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

2008-07-01

Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

Science.gov (United States)

Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

2012-01-01

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

2014-01-01

The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

Single-crystalline AlN growth on sapphire using physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

2011-02-07

A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers

Science.gov (United States)

Kirchner, V.; Heinke, H.; Birkle, U.; Einfeldt, S.; Hommel, D.; Selke, H.; Ryder, P. L.

1998-12-01

Gallium nitride layers were grown by plasma-assisted molecular-beam epitaxy on (0001)-oriented sapphire substrates using an electron cyclotron resonance (ECR) and a radio frequency (rf) plasma source. An applied substrate bias was varied from -200 to +250 V, resulting in a change of the density and energy of nitrogen ions impinging the growth surface. The layers were investigated by high-resolution x-ray diffractometry and high-resolution transmission electron microscopy (HRTEM). Applying a negative bias during growth has a marked detrimental effect on the crystal perfection of the layers grown with an ECR plasma source. This is indicated by a change in shape and width of (0002) and (202¯5) reciprocal lattice points as monitored by triple axis x-ray measurements. In HRTEM images, isolated basal plane stacking faults were found, which probably result from precipitation of interstitial atoms. The crystal damage in layers grown with a highly negative substrate bias is comparable to that observed for ion implantation processes at orders of magnitude larger ion energies. This is attributed to the impact of ions on the growing surface. None of the described phenomena was observed for the samples grown with the rf plasma source.

(211) oriented ZnTe growth on m-plane sapphire by MBE

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

2013-11-15

Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

Energy Technology Data Exchange (ETDEWEB)

Kristie Cooper; Gary Pickrell; Anbo Wang

2005-11-01

This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

Growth of single crystals of BaFe12O19 by solid state crystal growth

International Nuclear Information System (INIS)

Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

2016-01-01

Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.

Hopper Growth of Salt Crystals.

Science.gov (United States)

Desarnaud, Julie; Derluyn, Hannelore; Carmeliet, Jan; Bonn, Daniel; Shahidzadeh, Noushine

2018-06-07

The growth of hopper crystals is observed for many substances, but the mechanism of their formation remains ill understood. Here we investigate their growth by performing evaporation experiments on small volumes of salt solutions. We show that sodium chloride crystals that grow very fast from a highly supersaturated solution form a peculiar form of hopper crystal consisting of a series of connected miniature versions of the original cubic crystal. The transition between cubic and such hopper growth happens at a well-defined supersaturation where the growth rate of the cubic crystal reaches a maximum (∼6.5 ± 1.8 μm/s). Above this threshold, the growth rate varies as the third power of supersaturation, showing that a new mechanism, controlled by the maximum speed of surface integration of new molecules, induces the hopper growth of cubic crystals in cascade.

Molecular mechanisms of crystal growth

International Nuclear Information System (INIS)

Pina, C. M.

2000-01-01

In this paper I present an example of the research that the Mineral Surface Group of the Munster University is conducting in the field of Crystal Growth. Atomic Force Microscopy (Am) in situ observations of different barite (BaSO4) faces growing from aqueous solutions, in combination with computer simulations of the surface attachment of growth units allows us to test crystal growth models. Our results demonstrate the strong structural control that a crystal can exert on its own growth, revealing also the limitation of the classical crystal growth theories (two dimensional nucleation and spiral growth models) in providing a complete explanation for the growth behaviour at a molecular scale. (Author) 6 refs

Growth of single crystals of BaFe12O19 by solid state crystal growth

Science.gov (United States)

Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

2016-10-01

Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.

Use of sapphire as a neutron damage monitor for pressure vessel steels

International Nuclear Information System (INIS)

Pells, G.P.; Fudge, A.J.; Murphy, M.J.; Watt, S.

1989-01-01

Single crystal α-Al 2 O 3 (sapphire) has been neutron irradiated over a range of dose, dose rate and neutron energy spectra at temperatures from 60 to 310 0 C. Values of optical absorption at 400 nm, the peak of the aluminum vacancy absorption band, were plotted against damage dose expressed in terms of dpa of Al in sapphire obtained from measurements of induced radio-activity in activation foils irradiated with the sapphires and from calculation of the neutron energy spectrum at the irradiation position. The neutron energy spectrum was calculated using modern neutron transport computer codes and adjusted in the light of measurements obtained from multiple foil activation experiments. A simple response curve was obtained for all sapphires irradiated at temperatures between 220 to 310 0 C and for sapphires irradiated below 200 0 C which had been annealed at 290 0 C irrespective of dose rate or neutron beam energy spectrum. The single response curve for irradiations performed in a variety of neutron energy spectra validate the neutron energy spectrum computational procedures

Springer Handbook of Crystal Growth

CERN Document Server

Dhanaraj, Govindhan; Prasad, Vishwanath; Dudley, Michael

2010-01-01

Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated. Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary specia...

Principles of crystallization, and methods of single crystal growth

International Nuclear Information System (INIS)

Chacra, T.

2010-01-01

Most of single crystals (monocrystals), have distinguished optical, electrical, or magnetic properties, which make from single crystals, key elements in most of technical modern devices, as they may be used as lenses, Prisms, or grating sin optical devises, or Filters in X-Ray and spectrographic devices, or conductors and semiconductors in electronic, and computer industries. Furthermore, Single crystals are used in transducer devices. Moreover, they are indispensable elements in Laser and Maser emission technology.Crystal Growth Technology (CGT), has started, and developed in the international Universities and scientific institutions, aiming at some of single crystals, which may have significant properties and industrial applications, that can attract the attention of international crystal growth centers, to adopt the industrial production and marketing of such crystals. Unfortunately, Arab universities generally, and Syrian universities specifically, do not give even the minimum interest, to this field of Science.The purpose of this work is to attract the attention of Crystallographers, Physicists and Chemists in the Arab universities and research centers to the importance of crystal growth, and to work on, in the first stage to establish simple, uncomplicated laboratories for the growth of single crystal. Such laboratories can be supplied with equipment, which are partly available or can be manufactured in the local market. Many references (Articles, Papers, Diagrams, etc..) has been studied, to conclude the most important theoretical principles of Phase transitions,especially of crystallization. The conclusions of this study, are summarized in three Principles; Thermodynamic-, Morphologic-, and Kinetic-Principles. The study is completed by a brief description of the main single crystal growth methods with sketches, of equipment used in each method, which can be considered as primary designs for the equipment, of a new crystal growth laboratory. (author)

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

2017-01-01

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding

2017-05-12

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

Phase-field crystal simulation facet and branch crystal growth

Science.gov (United States)

Chen, Zhi; Wang, Zhaoyang; Gu, Xinrui; Chen, Yufei; Hao, Limei; de Wit, Jos; Jin, Kexin

2018-05-01

Phase-field crystal model with one mode is introduced to describe morphological transition. The relationship between growth morphology and smooth density distribution was investigated. The results indicate that the pattern selection of dendrite growth is caused by the competition between interface energy anisotropy and interface kinetic anisotropy based on the 2D phase diagram. When the calculation time increases, the crystal grows to secondary dendrite at the dimensionless undercooling equal to - 0.4. Moreover, when noise is introduced in the growth progress, the symmetry is broken in the growth mode, and there becomes irregular fractal-like growth morphology. Furthermore, the single crystal shape develops into polycrystalline when the noise amplitude is large enough. When the dimensionless undercooling is less than - 0.3, the noise has a significant effect on the growth shape. In addition, the growth velocity of crystal near to liquid phase line is slow, while the shape far away from the liquid adapts to fast growth. Based on the simulation results, the method was proved to be effective, and it can easily obtain different crystal shapes by choosing the different points in 2D phase diagram.

Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

International Nuclear Information System (INIS)

Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

2004-01-01

We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

Student Augmentation for Crystal Growth Research

National Research Council Canada - National Science Library

Prasad, V

1999-01-01

... intelligent modeling, design and control of crystal growth processes. One doctoral student worked on integrating the radiation heat transfer model into MASTRAPP, the crystal growth model developed by the Consortium for Crystal Growth Research...

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

2016-07-15

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

Introduction to crystal growth and characterization

CERN Document Server

Benz, Klaus-Werner

2014-01-01

This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase d

Effects of impurities on crystal growth in fructose crystallization

Science.gov (United States)

Chu, Y. D.; Shiau, L. D.; Berglund, K. A.

1989-10-01

The influence of impurities on the crystallization of anhydrous fructose from aqueous solution was studied. The growth kinetics of fructose crystals in the fructose-water-glucose and fructose-water-difructose dianhydrides systems were investigated using photomicroscopic contact nucleation techniques. Glucose is the major impurity likely to be present in fructose syrup formed during corn wet milling, while several difructose dianhydrides are formed in situ under crystallization conditions and have been proposed as a cause in the decrease of overall yields. Both sets of impurities were found to cause inhibition of crystal growth, but the mechanisms responsible in each case are different. It was found that the presence of glucose increases the solubility of fructose in water and thus lowers the supersaturation of the solution. This is probably the main effect responsible for the decrease of crystal growth. Since the molecular structures of difructose dianhydrides are similar to that of fructose, they are probably "tailor-made" impurities. The decrease of crystal growth is probably caused by the incorporation of these impurities into or adsorption to the crystal surface which would accept fructose molecules in the orientation that existed in the difructose dianhydride.

Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film

DEFF Research Database (Denmark)

Mozhaev, P. B.; Ovsyannikov, G. A.; Skov, Johannes

1999-01-01

The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending on t...

Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.

Science.gov (United States)

Deng, Bing; Pang, Zhenqian; Chen, Shulin; Li, Xin; Meng, Caixia; Li, Jiayu; Liu, Mengxi; Wu, Juanxia; Qi, Yue; Dang, Wenhui; Yang, Hao; Zhang, Yanfeng; Zhang, Jin; Kang, Ning; Xu, Hongqi; Fu, Qiang; Qiu, Xiaohui; Gao, Peng; Wei, Yujie; Liu, Zhongfan; Peng, Hailin

2017-12-26

Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.

Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

Science.gov (United States)

Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

2018-01-01

An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

International Nuclear Information System (INIS)

Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

2006-01-01

High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2013-09-01

Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

LASER PROCESSING ON SINGLE CRYSTALS BY UV PULSE LASER

OpenAIRE

龍見, 雅美; 佐々木, 徹; 高山, 恭宜

2009-01-01

Laser processing by using UV pulsed laser was carried out on single crystal such as sapphire and diamond in order to understand the fundamental laser processing on single crystal. The absorption edges of diamond and sapphire are longer and shorter than the wave length of UV laser, respectively. The processed regions by laser with near threshold power of processing show quite different state in each crystal.

SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

Energy Technology Data Exchange (ETDEWEB)

Shimoji, Yutaka

2010-08-09

Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

2016-04-15

In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

Science.gov (United States)

Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

2018-02-01

(11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

Science.gov (United States)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

Science.gov (United States)

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Protein crystal growth in low gravity

Science.gov (United States)

Feigelson, Robert S.

1993-01-01

This Final Technical Report for NASA Grant NAG8-774 covers the period from April 27, 1989 through December 31, 1992. It covers five main topics: fluid flow studies, the influence of growth conditions on the morphology of isocitrate lyase crystals, control of nucleation, the growth of lysozyme by the temperature gradient method and graphoepitaxy of protein crystals. The section on fluid flow discusses the limits of detectability in the Schlieren imaging of fluid flows around protein crystals. The isocitrate lyase study compares crystals grown terrestrially under a variety of conditions with those grown in space. The controlling factor governing the morphology of the crystals is the supersaturation. The lack of flow in the interface between the drop and the atmosphere in microgravity causes protein precipitation in the boundary layer and a lowering of the supersaturation in the drop. This lowered supersaturation leads to improved crystal morphology. Preliminary experiments with lysozyme indicated that localized temperature gradients could be used to nucleate crystals in a controlled manner. An apparatus (thermonucleator) was designed to study the controlled nucleation of protein crystals. This apparatus has been used to nucleate crystals of materials with both normal (ice-water, Rochelle salt and lysozyme) and retrograde (horse serum albumin and alpha chymotrypsinogen A) solubility. These studies have lead to the design of an new apparatus that small and more compatible with use in microgravity. Lysozyme crystals were grown by transporting nutrient from a source (lysozyme powder) to the crystal in a temperature gradient. The influence of path length and cross section on the growth rate was demonstrated. This technique can be combined with the thermonucleator to control both nucleation and growth. Graphoepitaxy utilizes a patterned substrate to orient growing crystals. In this study, silicon substrates with 10 micron grooves were used to grow crystals of catalase

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Science.gov (United States)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Innovation in crystal growth: A personal perspective

Science.gov (United States)

Mullin, J. B.

2008-04-01

The evolution of crystal growth has been crucially dependent on revolutionary innovations and initiatives involving ideas, technology and communication. A personal perspective is presented on some of these aspects in connection with the early history of semiconductors that have helped evolve our knowledge and advance the science and technology of crystal growth. The presentation considers examples from work on germanium, silicon, indium antimonide, gallium arsenide, indium phosphide, gallium phosphide and mercury cadmium telluride. In connection with metal organic vapour phase epitaxy (MOVPE), the influence of adduct purification for alkyls is noted together with the growth of Hg xCd 1-xTe. The role of crystal growth organisations together with initiatives in the publication of the Journal of Crystal Growth (JCG) and the pivotal role of the International Organisation of Crystal Growth (IOCG) are also highlighted in the quest for scientific excellence.

Protein-crystal growth experiment (planned)

Science.gov (United States)

Fujita, S.; Asano, K.; Hashitani, T.; Kitakohji, T.; Nemoto, H.; Kitamura, S.

1988-01-01

To evaluate the effectiveness of a microgravity environment on protein crystal growth, a system was developed using 5 cubic feet Get Away Special payload canister. In the experiment, protein (myoglobin) will be simultaneously crystallized from an aqueous solution in 16 crystallization units using three types of crystallization methods, i.e., batch, vapor diffusion, and free interface diffusion. Each unit has two compartments: one for the protein solution and the other for the ammonium sulfate solution. Compartments are separated by thick acrylic or thin stainless steel plates. Crystallization will be started by sliding out the plates, then will be periodically recorded up to 120 hours by a still camera. The temperature will be passively controlled by a phase transition thermal storage component and recorded in IC memory throughout the experiment. Microgravity environment can then be evaluated for protein crystal growth by comparing crystallization in space with that on Earth.

Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mota-Santiago, Pablo-Ernesto [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Crespo-Sosa, Alejandro, E-mail: crespo@fisica.unam.mx [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Jimenez-Hernandez, Jose-Luis; Silva-Pereyra, Hector-Gabriel; Reyes-Esqueda, Jorge-Alejandro; Oliver, Alicia [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico)

2012-10-15

Highlights: Black-Right-Pointing-Pointer Systematic study on the formation of Ag and Au nano-particles in Al{sub 2}O{sub 3}. Black-Right-Pointing-Pointer Annealing in a reducing atmosphere, below the metal melting point is more suitable. Black-Right-Pointing-Pointer Au nano-particles grow up to 15 nm and Ag nano-particles up to 45 nm in radius. Black-Right-Pointing-Pointer Ostwald ripening is the mechanism responsible for the formation of large nanoparticles. Black-Right-Pointing-Pointer Optical properties of metallic nano-particles in Al{sub 2}O{sub 3} can be related to their size. - Abstract: Metallic nano-particles embedded in transparent dielectrics are very important for new technological applications because of their unique optical properties. These properties depend strongly on the size and shape of the nano-particles. In order to achieve the synthesis of metallic nano-particles it has been used the technique of ion implantation. This is a very common technique because it allows the control of the depth and concentration of the metallic ions inside the sample, limited mostly by straggling, without introducing other contaminant agents. The purpose of this work was to measure the size of the nano-particles grown under different conditions in Sapphire and its size evolution during the growth process. To achieve this goal, {alpha}-Al{sub 2}O{sub 3} single crystals were implanted with Ag or Au ions at room temperature with different fluences (from 2 Multiplication-Sign 10{sup 16} ions/cm{sup 2} to 8 Multiplication-Sign 10{sup 16} ions/cm{sup 2}). Afterwards, the samples were annealed at different temperatures (from 600 Degree-Sign C to 1100 Degree-Sign C) in oxidising, reducing, Ar or N{sub 2} atmospheres. We measured the ion depth profile by Rutherford Backscattering Spectroscopy (RBS) and the nano-crystals size distribution by using two methods, the surface plasmon resonance in the optical extinction spectrum and the Transmission Electron Microscopy (TEM).

Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

Science.gov (United States)

Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

2010-03-20

We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

Hydrothermal Growth of Polyscale Crystals

Science.gov (United States)

Byrappa, Kullaiah

In this chapter, the importance of the hydrothermal technique for growth of polyscale crystals is discussed with reference to its efficiency in synthesizing high-quality crystals of various sizes for modern technological applications. The historical development of the hydrothermal technique is briefly discussed, to show its evolution over time. Also some of the important types of apparatus used in routine hydrothermal research, including the continuous production of nanosize crystals, are discussed. The latest trends in the hydrothermal growth of crystals, such as thermodynamic modeling and understanding of the solution chemistry, are elucidated with appropriate examples. The growth of some selected bulk, fine, and nanosized crystals of current technological significance, such as quartz, aluminum and gallium berlinites, calcite, gemstones, rare-earth vanadates, electroceramic titanates, and carbon polymorphs, is discussed in detail. Future trends in the hydrothermal technique, required to meet the challenges of fast-growing demand for materials in various technological fields, are described. At the end of this chapter, an Appendix 18.A containing a more or less complete list of the characteristic families of crystals synthesized by the hydrothermal technique is given with the solvent and pressure-temperature (PT) conditions used in their synthesis.

Connection between the growth rate distribution and the size dependent crystal growth

Science.gov (United States)

Mitrović, M. M.; Žekić, A. A.; IIić, Z. Z.

2002-07-01

The results of investigations of the connection between the growth rate dispersions and the size dependent crystal growth of potassium dihydrogen phosphate (KDP), Rochelle salt (RS) and sodium chlorate (SC) are presented. A possible way out of the existing confusion in the size dependent crystal growth investigations is suggested. It is shown that the size independent growth exists if the crystals belonging to one growth rate distribution maximum are considered separately. The investigations suggest possible reason for the observed distribution maxima widths, and the high data scattering on the growth rate versus the crystal size dependence.

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

Energy Technology Data Exchange (ETDEWEB)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Synthesis of titanium sapphire by ion implantation

International Nuclear Information System (INIS)

Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

1998-01-01

Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

Contribution to the microwave characterisation of superconductive materials by means of sapphire resonators

International Nuclear Information System (INIS)

Hanus, Xavier

1993-01-01

The objective of this research thesis is to find a compact resonant structure which would allow the residual surface impedance of superconductive samples to be simply, quickly and economically characterised. The author first explains why he decided to use a sapphire single-crystal as inner dielectric, given some performance reached by resonant structures equipped with such inner dielectrics, and given constraints adopted from the start. He explains the origin of microwave losses which appear in this type of resonant structure, i.e. respectively the surface impedance as far as metallic losses are concerned, and the sapphire dielectric loss angle for as far as dielectric losses are concerned. The experimental installation and the principle of microwave measurements are described. The performance of different possible solutions of resonant structures from starting criteria is presented. The solution of the cavity-sapphire with a TE 011 resonant mode is derived [fr

Beginner’s guide to flux crystal growth

CERN Document Server

Tachibana, Makoto

2017-01-01

This book introduces the principles and techniques of crystal growth by the flux method, which is arguably the most useful way to obtain millimeter- to centimeter-sized single crystals for physical research. As it is possible to find an appropriate solvent (“flux”) for nearly all inorganic materials, the flux method can be applied to the growth of many crystals ranging from transition metal oxides to intermetallic compounds. Both important principles and experimental procedures are described in a clear and accessible manner. Practical advice on various aspects of the experiment, which is not readily available in the literature, will assist the beginning graduate students in setting up the lab and conducting successful crystal growth. The mechanisms of crystal growth at an elementary level are also provided to better understand the techniques and to help in assessing the quality of the crystals. The book also contains many photographs of beautiful crystals with important physical properties of current inte...

An injection modelocked Ti-sapphire laser for synchronous photoinjection

International Nuclear Information System (INIS)

Hovater, C.; Poelker, M.

1997-01-01

The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

Detection of beryllium treatment of natural sapphires by NRA

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

2010-06-15

Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

DKDP crystal growth controlled by cooling rate

Science.gov (United States)

Xie, Xiaoyi; Qi, Hongji; Shao, Jianda

2017-08-01

The performance of deuterated potassium dihydrogen phosphate (DKDP) crystal directly affects beam quality, energy and conversion efficiency in the Inertial Confinement Fusion（ICF）facility, which is related with the initial saturation temperature of solution and the real-time supersaturation during the crystal growth. However, traditional method to measure the saturation temperature is neither efficient nor accurate enough. Besides, the supersaturation is often controlled by experience, which yields the higher error and leads to the instability during the crystal growth. In this paper, DKDP solution with 78% deuteration concentration is crystallized in different temperatures. We study the relation between solubility and temperature of DKDP and fit a theoretical curve with a parabola model. With the model, the measurement of saturation temperature is simplified and the control precision of the cooling rate is improved during the crystal growth, which is beneficial for optimizing the crystal growth process.

Advances in the understanding of crystal growth mechanisms

CERN Document Server

Nishinaga, T; Harada, J; Sasaki, A; Takei, H

1997-01-01

This book contains the results of a research project entitled Crystal Growth Mechanisms on an Atomic Scale, which was carried out for 3 years by some 72 reseachers. Until recently in Japan, only the technological aspects of crystal growth have been emphasized and attention was paid only to its importance in industry. However the scientific aspects also need to be considered so that the technology of crystal growth can be developed even further. This project therefore aimed at understanding crystal growth and the emphasis was on finding growth mechanisms on an atomic scale.

Dendritic growth forms of borax crystals

International Nuclear Information System (INIS)

Takoo, R.K.; Patel, B.R.; Joshi, M.S.

1983-01-01

A variety of dendritic forms of borax grown from solutions by the film formation method is given. The changing growth morphology is followed as a function of concentration and temperature. The initial, intermediate and final growth morphologies are described and discussed. Influence of evaporation rate and supersaturation on the mechanism of growth is assessed. It is suggested that under all crystallization conditions, borax crystals have dendritic form in the initial stages of growth. (author)

Crystal growth from low-temperature solutions

International Nuclear Information System (INIS)

Sangwal, K.

1994-01-01

The state of the art in crystal growth from solutions at low-temperatures has been done. The thermodynamic and kinetic parameters have been discussed in respect to different systems. The methods of crystal growth from water and organic solutions and different variants of their technical realizations have been reviewed. Also the growth by chemical reactions and gel growth have been described. The large number of examples have been shown. 21 refs, 30 figs, 3 tabs

Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

Energy Technology Data Exchange (ETDEWEB)

Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

1991-06-29

Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

Measurements of Protein Crystal Face Growth Rates

Science.gov (United States)

Gorti, S.

2014-01-01

Protein crystal growth rates will be determined for several hyperthermophile proteins.; The growth rates will be assessed using available theoretical models, including kinetic roughening.; If/when kinetic roughening supersaturations are established, determinations of protein crystal quality over a range of supersaturations will also be assessed.; The results of our ground based effort may well address the existence of a correlation between fundamental growth mechanisms and protein crystal quality.

Patterned solid state growth of barium titanate crystals

Science.gov (United States)

Ugorek, Michael Stephen

An understanding of microstructure evolution in ceramic materials, including single crystal development and abnormal/enhanced grain growth should enable more controlled final ceramic element structures. In this study, two different approaches were used to control single crystal development in a patterned array. These two methods are: (1) patterned solid state growth in BaTiO 3 ceramics, and (2) metal-mediated single crystal growth in BaTiO 3. With the patterned solid state growth technique, optical photolithography was used to pattern dopants as well as [001] and [110] BaTiO3 single crystal template arrays with a 1000 microm line pattern array with 1000 microm spacings. These patterns were subsequently used to control the matrix grain growth evolution and single crystal development in BaTiO3. It was shown that the growth kinetics can be controlled by a small initial grain size, atmosphere conditions, and the introduction of a dopant at selective areas/interfaces. By using a PO2 of 1x10-5 atm during high temperature heat treatment, the matrix coarsening has been limited (to roughly 2 times the initial grain size), while retaining single crystal boundary motion up to 0.5 mm during growth for dwell times up to 9 h at 1300°C. The longitudinal and lateral growth rates were optimized at 10--15 microm/h at 1300°C in a PO2 of 1x10 -5 atm for single crystal growth with limited matrix coarsening. Using these conditions, a patterned microstructure in BaTiO3 was obtained. With the metal-mediated single crystal growth technique, a novel approach for fabricating 2-2 single crystal/polymer composites with a kerf texture development were studied using both [001] and [110] BaTiO3 single crystals templates. By using a PO 2 of 1x10-11 atm during high temperature heat treatment, matrix coarsening was limited while enabling single crystal boundary motion up to 0.35 mm during growth between 1250°C and 1300°C with growth rates ˜ 3--4 microm/h for both single crystal orientations. By

Single Crystal Filters for Neutron Spectrometry

International Nuclear Information System (INIS)

Habib, N.

2008-01-01

A study of neutron transmission properties trough a large single crystals specimens of Si, Ge, Pb, Bi and sapphire at 300 K and 80 K have been made for a wide range of neutron energies. The effectiveness of such filters is given by the ratio of the total cross-section of unwanted epithermal neutrons to that the desired thermal neutron beam and by the optimum choice of the crystal orientation, its mosaic spread, thickness and temperature.Our study indicates that sapphire is significantly more effective than the others for a wide range of neutron energies

On the growth of ammonium nitrate(III) crystals

NARCIS (Netherlands)

Vogels, L.J.P.; Marsman, H.A.M.; Verheijen, M.A.; Bennema, P.; Elwenspoek, Michael Curt

The growth rate of NH4NO3 phase III crystals is measured and interpreted using two models. The first is a standard crystal growth model based on a spiral growth mechanism, the second outlines the concept of kinetical roughening. As the crystal becomes rough a critical supersaturation can be

Controlled growth of filamentary crystals and fabrication of single-crystal whisker probes

International Nuclear Information System (INIS)

Givargizov, E. I.

2006-01-01

The growth of filamentary crystals (whiskers) on a single-crystal substrate through the vapour-liquid-solid mechanism is described. The possibility of fabricating oriented systems of whiskers on the basis of this mechanism of crystal growth is noted. A phenomenon that is important for nanotechnology is noted: the existence of a critical diameter of whiskers, below which they are not formed. The phenomenon of radial periodic instability, which is characteristic of nanowhiskers, is described and the ways of its elimination are shown. The possibility of transforming whiskers into single-crystal tips and the growth of crystalline diamond particles at their apices are noted as important for practice. Possible applications of systems of whiskers and tips are described briefly. Particular attention is paid to the latest direction in whisker technology-fabrication of single-crystal whisker probes for atomic force microscopy

Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

2014-02-15

Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Science.gov (United States)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

Science.gov (United States)

Su, Ching-Hua (Inventor)

2013-01-01

The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

Iron sulfide crystal growth: a literature review

International Nuclear Information System (INIS)

Dewar, E.J.

1977-04-01

Iron pyrite (FeS 2 ) is often found on trays and in heat exchangers in Girdler-Sulfide (G.S.) plants used to extract D 2 O from fresh water. A critical review of the literature was made to find: (i) what is known about FeS 2 crystal growth; (ii) which techniques could be used to study FeS 2 crystal growth experimentally; (iii) potential chemical additives that could be used in trace amounts to poison FeS 2 crystals and reduce their growth rate in G.S. plants. (author)

Crystal growth and computational materials science

International Nuclear Information System (INIS)

Jayakumar, S.; Ravindran, P.; Arun Kumar, R.; Sudarshan, C.

2012-01-01

The proceedings of the international conference on advanced materials discusses the advances being made in the area of single crystals, their preparation and device development from these crystals and details of the progress that is taking place in the computational field relating to materials science. Computational materials science makes use of advanced simulation tools and computer interfaces to develop a virtual platform which can provide a model for real-time experiments. This book includes selected papers in topics of crystal growth and computational materials science. We are confident that the new concepts and results presented will stimulate and enhance progress of research on crystal growth and computational materials science. Papers relevant to INIS are indexed separately

Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

Directory of Open Access Journals (Sweden)

Yu-An Chen

2014-01-01

Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

Effects of growth conditions on thermal profiles during Czochralski silicon crystal growth

Science.gov (United States)

Choe, Kwang Su; Stefani, Jerry A.; Dettling, Theodore B.; Tien, John K.; Wallace, John P.

1991-01-01

An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. In terms of the experiments, the effects of changes in growth parameters, which include the crystal and crucible rotation rates, crucible position, and pull rate, and hot-zone geometries were investigated. The results show that the crystal thermal profile could shift significantly as a function of crystal length if the closed-loop control fails to maintain a constant thermal condition. As a direct evidence to the effects of the melt flow on heat transfer processes, a thermal gradient minimum was observed when the crystal/crucible rotation combination was 20/-10 rpm cw. The thermal gradients in the crystal near the growth interface were reduced most by decreasing the pull rate or by reducing the radiant heat loss to the environment; a nearly constant axial thermal gradient was achieved when either the pull rate was decreased by half, the height of the exposed crucible wall was doubled, or a radiation shield was placed around the crystal. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5°C/mm. When compared to theoretical results found in literature, the axial profiles correlated well with the results of the models which included radiant interactions. However, the radial gradients estimated from three-frequency data were much higher than what were predicted by known theoretical models. This discrepancy seems to indicate that optical phenomenon within the crystal is significant and should be included in theoretical modeling.

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Giant secondary grain growth in Cu films on sapphire

Directory of Open Access Journals (Sweden)

David L. Miller

2013-08-01

Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

Energy Technology Data Exchange (ETDEWEB)

Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

2005-10-01

We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

Development and melt growth of novel scintillating halide crystals

Science.gov (United States)

Yoshikawa, Akira; Yokota, Yuui; Shoji, Yasuhiro; Kral, Robert; Kamada, Kei; Kurosawa, Shunsuke; Ohashi, Yuji; Arakawa, Mototaka; Chani, Valery I.; Kochurikhin, Vladimir V.; Yamaji, Akihiro; Andrey, Medvedev; Nikl, Martin

2017-12-01

Melt growth of scintillating halide crystals is reviewed. The vertical Bridgman growth technique is still considered as very popular method that enables production of relatively large and commercially attractive crystals. On the other hand, the micro-pulling-down method is preferable when fabrication of small samples, sufficient for preliminary characterization of their optical and/or scintillation performance, is required. Moreover, bulk crystal growth is also available using the micro-pulling-down furnace. The examples of growths of various halide crystals by industrially friendly melt growth techniques including Czochralski and edge-defined film-fed growth methods are also discussed. Finally, traveling molten zone growth that in some degree corresponds to horizontal zone melting is briefly overviewed.

Czochralski growth of gallium indium antimonide alloy crystals

Energy Technology Data Exchange (ETDEWEB)

Tsaur, S.C.

1998-02-01

Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors.

Science.gov (United States)

Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2015-07-15

Perfectly aligned horizontal ZnSe nano-wires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method for solid state crystal growth

Science.gov (United States)

Nolas, George S.; Beekman, Matthew K.

2013-04-09

A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.

Growth of the (001) face of borax crystals

OpenAIRE

Suharso, Suharso

2010-01-01

he growth rates of borax crystals from aqueous solutions in the (001) direction at various relative supersaturations were measured using in situ cell optical microscopy method. The result shows that the growth mechanism of the (001) face of borax crystal at temperature of 20 °C is spiral growth mechanism.   Keywords: Growth mechanism, borax.

Photographic appraisal of crystal lattice growth technique

Directory of Open Access Journals (Sweden)

Kapoor D

2005-01-01

Full Text Available Concept of creating mechanical retention for bonding through crystal growth has been successfully achieved in the present study. By using polyacrylic acid, sulphated with sulphuric acid as etchant, abundant crystal growth was demonstrated. Keeping in view the obvious benefits of crystal growth technique, the present SEM study was aimed to observe and compare the changes brought about by different etching agents (phosphoric acid, polyacrylic acid and polyacrylic acid sulphated and to evaluate their advantages and disadvantages in an attempt to reduce iatrogenic trauma caused due to surface enamel alteration. Control and experimental groups were made of 24 and 30 premolars, respectively, for scanning electron microscopic appraisal of normal unetched and etched enamel surface and fracture site and finished surface evaluation. When compared with conventional phosphoric acid and weaker polyacrylic acid, investigations indicated that crystal growth treatment on enamel surface caused minimal iatrogenic trauma and surface alteration were restored to the original untreated condition to a large extent.

Growth modes of InN (000-1) on GaN buffer layers on sapphire

International Nuclear Information System (INIS)

Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

2005-01-01

In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

International Nuclear Information System (INIS)

Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

1999-01-01

A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

International Nuclear Information System (INIS)

Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

2009-01-01

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

Research Progress and Development of Sapphire Fiber Sensor

Directory of Open Access Journals (Sweden)

Guochang ZHAO

2014-07-01

Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

Crystal growth and physical properties of Ferro-pnictides

Energy Technology Data Exchange (ETDEWEB)

Aswartham, Saicharan

2012-11-08

The thesis work presented here emphasizes important aspects of crystal growth and the influence of chemical substitution in Fe-As superconductors. High temperature solution growth technique is one of most powerful and widely used technique to grow single crystals of various materials. The biggest advantage of high temperature solution growth technique is the, possibility of growing single crystals from both congruently and incongruently melting materials. Solution growth technique has the potential to control high vapour pressures, given the fact that, in Fe-based superconductors elements with high vapour pressure like As, K, Li and Na have to be handled during the crystal growth procedure. In this scenario high temperature solution growth is the best suitable growth technique to synthesize sizable homogeneous single crystals. Using self-flux high temperature solution growth technique, large centimeter-sized high quality single crystals of BaFe{sub 2}As{sub 2} were grown. This pristine compound BaFe{sub 2}As{sub 2} undergoes structural and magnetic transition at T{sub S/N} = 137 K. By suppressing this magnetic transition and stabilizing tetragonal phase with chemical substitution, like Co-doping and Na-doping, bulk superconductivity is achieved. Superconducting transitions of as high as T{sub c} = 34 K with Na substitution and T{sub c} = 25 K with Co-doping were obtained. A combined electronic phase diagram has been achieved for both electron doping with Co and hole doping with Na in BaFe{sub 2}As{sub 2}. Single crystals of LiFe{sub 1-x}Co{sub x}As with x = 0, 0.025, 0.05 and 0.075 were grown by a self-flux high temperature solution growth technique. The charge doping in LiFeAs is achieved with the Co-doping in Fe atoms. The superconducting properties investigated by means of temperature dependent magnetization and resistivity revealed that superconductivity is shifted to lower temperatures and with higher amount of charge carriers superconductivity is killed

Crystal growth and doping

International Nuclear Information System (INIS)

Paorici, C.

1980-01-01

Section 1 contains a self-consistent review of the basic growth features. After a short introduction concerning the driving force acting in a crystallization process, three main topics are broadly discussed: (i) interface kinetics; (ii) transport kinetics, and (iii) growth stability conditions. On point (i), after definition of the nature of interface, using Temkin's model, the growth mechanisms predicted by Burton, Cabrera and Frank (BCF) and bidimensional nucleation theories are fully developed. On points (ii) and (iii), the differential equations of the constitutional (concentration) and thermal fields are presented and discussed in terms of relevant approximations, suitable boundary conditions and limit values expected in order to have growth stability. Section 2 reports various experimental procedures for growing bulk crystals from the melt, from solutions and from the vapour phase. The basic concepts of Section 1 are amply employed for a critical discussion of possibilities, advantages and drawbacks of the methods described. Along the same lines, in Section 3 the principal epitaxial deposition procedures are highlighted. Section 4 contains a brief account of doping and of stoichiometry-defect control procedures. There is a long, carefully chosen list of bibliographical references. (author)

Growth of Ga2O3 single crystal

OpenAIRE

龍見, 雅美; 小池, 裕之; 市木, 伸明; Tatsumi, Masami; Koike, Hiroyuki; Ichiki, Nobuaki

2010-01-01

Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was . Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrat...

Growth and Characterization of Tetraphenylphosphonium Bromide Crystal

Directory of Open Access Journals (Sweden)

Guangqiang Wang

2017-05-01

Full Text Available Multiple-phenyl phosphorous compounds are a group of chemical materials that have been used as reactants, pharmaceutical intermediates, extractants, and catalysts in organic synthetic reactions. However, the crystal growth of bulk crystals of multiple-phenyl phosphorous compounds, which may expand their applications in photonics technology, have been largely overlooked. In this article, the crystal growth of tetraphenylphosphonium bromide (TPPB has been studied in organic solvents and water. The crystal structures and crystallization features are analyzed by X-ray diffraction data. By a slow temperature-lowering method, a single-crystal of TPPB (2H2O with the size of 27 × 20 × 20 mm3 has been obtained in water. The basic thermal and optical properties were characterized. We find that the TPPB (2H2O crystal shows excellent transparent property in the near-IR region. Large Raman shifts and strong Raman scattering intensity indicate that TPPB is a potential candidate in Raman-scattering-based nonlinearity applications.

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Gold wetting effects on sapphire irradiated with GeV uranium ions

International Nuclear Information System (INIS)

Ramos, S.M.M.

1997-01-01

Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

Energy Technology Data Exchange (ETDEWEB)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

2015-07-15

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

Growth morphologies of crystal surfaces

Science.gov (United States)

Xiao, Rong-Fu; Alexander, J. Iwan D.; Rosenberger, Franz

1991-03-01

We have expanded our earlier Monte Carlo model [Phys. Rev. A 38, 2447 (1988); J. Crystal Growth 100, 313 (1990)] to three dimensions and included reevaporation after accommodation and growth on dislocation-induced steps. We found again that, for a given set of growth parameters, the critical size, beyond which a crystal cannot retain its macroscopically faceted shape, scales linearly with the mean free path in the vapor. However, the three-dimensional (3D) the systems show increased shape stability compared to corresponding 2D cases. Extrapolation of the model results to mean-free-path conditions used in morphological stability experiments leads to order-of-magnitude agreement of the predicted critical size with experimental findings. The stability region for macroscopically smooth (faceted) surfaces in the parameter space of temperature and supersaturation depends on both the surface and bulk diffusion. While surface diffusion is seen to smooth the growth morphology on the scale of the surface diffusion length, bulk diffusion is always destabilizing. The atomic surface roughness increases with increase in growth temperature and supersaturation. That is, the tendency of surface kinetics anisotropies to stabilize the growth shape is reduced through thermal and kinetic roughening. It is also found that the solid-on-solid assumption, which can be advantageously used at low temperatures and supersaturations, is insufficient to describe the growth dynamics of atomically rough interfaces where bulk diffusion governs the process. For surfaces with an emerging screw dislocation, we find that the spiral growth mechanism dominates at low temperatures and supersaturations. The polygonization of a growth spiral decreases with increasing temperature or supersaturation. When the mean free path in the nutrient is comparable to the lattice constant, the combined effect of bulk and surface diffusion reduces the terrace width of a growth spiral in its center region. At elevated

Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

International Nuclear Information System (INIS)

Stoker, D. S.; Keto, J. W.; Baek, J.; Wang, W.; Becker, M. F.; Kovar, D.

2006-01-01

We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χ xxxx (3) (3ω;ω,ω,ω)=1.52±0.25x10 -13 esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects

Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

Directory of Open Access Journals (Sweden)

Jaeyeong Lee

2017-12-01

Full Text Available The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages.

Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

Energy Technology Data Exchange (ETDEWEB)

Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

2012-01-01

Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

Macromolecular Crystal Growth by Means of Microfluidics

Science.gov (United States)

vanderWoerd, Mark; Ferree, Darren; Spearing, Scott; Monaco, Lisa; Molho, Josh; Spaid, Michael; Brasseur, Mike; Curreri, Peter A. (Technical Monitor)

2002-01-01

We have performed a feasibility study in which we show that chip-based, microfluidic (LabChip(TM)) technology is suitable for protein crystal growth. This technology allows for accurate and reliable dispensing and mixing of very small volumes while minimizing bubble formation in the crystallization mixture. The amount of (protein) solution remaining after completion of an experiment is minimal, which makes this technique efficient and attractive for use with proteins, which are difficult or expensive to obtain. The nature of LabChip(TM) technology renders it highly amenable to automation. Protein crystals obtained in our initial feasibility studies were of excellent quality as determined by X-ray diffraction. Subsequent to the feasibility study, we designed and produced the first LabChip(TM) device specifically for protein crystallization in batch mode. It can reliably dispense and mix from a range of solution constituents into two independent growth wells. We are currently testing this design to prove its efficacy for protein crystallization optimization experiments. In the near future we will expand our design to incorporate up to 10 growth wells per LabChip(TM) device. Upon completion, additional crystallization techniques such as vapor diffusion and liquid-liquid diffusion will be accommodated. Macromolecular crystallization using microfluidic technology is envisioned as a fully automated system, which will use the 'tele-science' concept of remote operation and will be developed into a research facility for the International Space Station as well as on the ground.

Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

Energy Technology Data Exchange (ETDEWEB)

Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1998-03-01

Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

A continuous Czochralski silicon crystal growth system

Science.gov (United States)

Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

2003-03-01

Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

Growth and characterization of heavily doped silicon crystals

Energy Technology Data Exchange (ETDEWEB)

Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

2011-08-15

Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

International Nuclear Information System (INIS)

Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

2011-01-01

Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

The Growth of Protein Crystals Using McDUCK

Science.gov (United States)

Ewing, Felicia; Wilson, Lori; Nadarajah, Arunan; Pusey, Marc

1998-01-01

Most of the current microgravity crystal growth hardware is optimized to produce crystals within the limited time available on orbit. This often results in the actual nucleation and growth process being rushed or the system not coming to equilibrium within the limited time available. Longer duration hardware exists, but one cannot readily pick out crystals grown early versus those which nucleated and grew more slowly. We have devised a long duration apparatus, the Multi-chamber Dialysis Unit for Crystallization Kinetics, or McDUCK. This apparatus-is a series of protein chambers, stacked upon a precipitant reservoir chamber. All chambers are separated by a dialysis membrane, which serves to pass small molecules while retaining the protein. The volume of the Precipitant chamber is equal to the sum of the volumes of the protein chamber. In operation, the appropriate chambers are filled with precipitant solution or protein solution, and the McDUCK is placed standing upright, with the precipitant chamber on the bottom. The precipitant diffuses upwards over time, with the time to reach equilibration a function of the diffusivity of the precipitant and the overall length of the diffusion pathway. Typical equilibration times are approximately 2-4 months, and one can readily separate rapid from slow nucleation and growth crystals. An advantage on Earth is that the vertical precipitant concentration gradient dominates that of the solute, thus dampening out solute density gradient driven convective flows. However, large Earth-grown crystals have so far tended to be more two dimensional. Preliminary X-ray diffraction analysis of lysozyme crystals grown in McDUCK have indicated that the best, and largest, come from the middle chambers, suggesting that there is an optimal growth rate. Further, the improvements in diffraction resolution have been better signal to noise ratios in the low resolution data, not an increase in resolution overall. Due to the persistently large crystals

Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

International Nuclear Information System (INIS)

Lacroix, Yves; Chung, Sung-Hoon; Sakai, Shiro

2001-01-01

An experiment was performed to explain the appearance of cracks along mesa structures during the processing of GaN device layers grown on sapphire substrates. Micro-Raman spectroscopy was used to measure the position-dependent stress in the GaN layer. We show evidence that the stress at the interface with the substrate may be larger along the mesa structures than that of the as-grown layer, and that this increase in stress can be enough to induce cracks along mesa structures during processing. We report on the formation of cracks that propagate guided by the nonuniformity of the stress induced by the formation of mesa structures in the GaN layer, independent of crystal direction. The understanding of cracking mechanisms has implications in GaN-based device structures that require heteroepitaxial growth of layers with different lattice size and thermal expansion coefficients. [copyright] 2001 American Institute of Physics

Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

Science.gov (United States)

Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

2018-02-01

Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

Reduced cost and improved figure of sapphire optical components

Science.gov (United States)

Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

2015-10-01

Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

Science.gov (United States)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

Science.gov (United States)

Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

2018-04-01

Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

Growth of large detector crystals. CRADA final report

International Nuclear Information System (INIS)

Boatner, L.A.; Samuelson, S.

1997-01-01

In the course of a collaborative research effort between L.A. Boatner of Oak Ridge National Laboratory and Prof. Alex Lempicki of the Department of Chemistry of Boston University, a new highly efficient and very fast scintillator for the detection of gamma-rays was discovered. This new scintillator consists of a single crystal of lutetium orthophosphate (LuPO 4 ) to which a small percentage of trivalent cerium is added as an activator ion. The new lutetium orthophosphate-cerium scintillator was found to be superior in performance to bismuth germanium oxide--a material that is currently widely used as a gamma-ray detector in a variety of medical, scientific, and technical applications. Single crystals of LuPO 4 and related rare-earth orthophosphates had been grown for a number of years in the ORNL Solid State Division prior to the discovery of the efficient gamma-ray-scintillation response of LuPO 4 :Ce. The high-temperature-solvent (flux-growth) method used for the growth of these crystals was capable of producing crystals in sizes that were adequate for research purposes but that were inadequate for commercial-scale production and widespread application. The CRADA between ORNL and Deltronic Crystal Industries of Dover, NJ was undertaken for the purpose of investigating alternate approaches, such as top-seeded-solution growth, to the growth of LuPO 4 :Ce scintillator crystals in sizes significantly larger than those obtainable through the application of standard flux-growth methods and, therefore, suitable for commercial sales and applications

Growth of optical grade germanium crystals

International Nuclear Information System (INIS)

Waris, M.; Akhtar, M.J.; Mehmood, N.; Ashraf, M.; Siddique, M.

2011-01-01

A novel design of Czochralski( CZ ) growth station in a low frequency induction furnace is described and growth of optical grade Ge crystal as a test material is performed achieving a flat solid-liquid interface shape. Grown Ge crystals are annealed in air at 450 -500 deg. C for 4 hrs and then characterized by determination of crystallographic orientation by Laue (back-reflection of X-rays) method, dislocation density studies by etch-pits formation, measuring electrical resistivity by 4-probe technique, conductivity type determination by hot probe method, measurement of hardness on Moh's scale and optical transmission measurement in IR region. The results obtained are compared to those reported in the literature. The use of this growth station for other materials is suggested. (author)

A Cannibalistic Approach to Grand Canonical Crystal Growth.

Science.gov (United States)

Karmakar, Tarak; Piaggi, Pablo M; Perego, Claudio; Parrinello, Michele

2018-04-04

Canonical molecular dynamics simulations of crystal growth from solution suffer from severe finite-size effects. As the crystal grows, the solute molecules are drawn from the solution to the crystal, leading to a continuous drop in the solution concentration. This is in contrast to experiments in which the crystal grows at an approximately constant supersaturation of a bulk solution. Recently, Perego et al. [ J. Chem. Phys. 2015, 142, 144113] showed that in a periodic setup in which the crystal is represented as a slab, the concentration in the vicinity of the two surfaces can be kept constant while the molecules are drawn from a part of the solution that acts as a molecular reservoir. This method is quite effective in studying crystallization under controlled supersaturation conditions. However, once the reservoir is depleted, the constant supersaturation conditions cannot be maintained. We propose a variant of this method to tackle this depletion problem by simultaneously dissolving one side of the crystal while letting the other side grow. A continuous supply of particles to the solution due to the crystal dissolution maintains a steady solution concentration and avoids reservoir depletion. In this way, a constant supersaturation condition can be maintained for as long as necessary. We have applied this method to study the growth and dissolution of urea crystal from water solution under constant supersaturation and undersaturation conditions, respectively. The computed growth and dissolution rates are in good agreement with those obtained in previous studies.

Fluid Physics and Macromolecular Crystal Growth in Microgravity

Science.gov (United States)

Helliwell, John R.; Snell, Edward H.; Chayen, Naomi E.; Judge, Russell A.; Boggon, Titus J.; Pusey, M. L.; Rose, M. Franklin (Technical Monitor)

2000-01-01

The first protein crystallization experiment in microgravity was launched in April, 1981 and used Germany's Technologische Experimente unter Schwerelosigkeit (TEXUS 3) sounding rocket. The protein P-galactosidase (molecular weight 465Kda) was chosen as the sample with a liquid-liquid diffusion growth method. A sliding device brought the protein, buffer and salt solution into contact when microgravity was reached. The sounding rocket gave six minutes of microgravity time with a cine camera and schlieren optics used to monitor the experiment, a single growth cell. In microgravity a strictly laminar diffusion process was observed in contrast to the turbulent convection seen on the ground. Several single crystals, approx 100micron in length, were formed in the flight which were of inferior but of comparable visual quality to those grown on the ground over several days. A second experiment using the same protocol but with solutions cooled to -8C (kept liquid with glycerol antifreeze) again showed laminar diffusion. The science of macromolecular structural crystallography involves crystallization of the macromolecule followed by use of the crystal for X-ray diffraction experiments to determine the three dimensional structure of the macromolecule. Neutron protein crystallography is employed for elucidation of H/D exchange and for improved definition of the bound solvent (D20). The structural information enables an understanding of how the molecule functions with important potential for rational drug design, improved efficiency of industrial enzymes and agricultural chemical development. The removal of turbulent convection and sedimentation in microgravity, and the assumption that higher quality crystals will be produced, has given rise to the growing number of crystallization experiments now flown. Many experiments can be flown in a small volume with simple, largely automated, equipment - an ideal combination for a microgravity experiment. The term "protein crystal growth

Economic analysis of crystal growth in space

Science.gov (United States)

Ulrich, D. R.; Chung, A. M.; Yan, C. S.; Mccreight, L. R.

1972-01-01

Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound single crystals, i.e. ceramic oxides and compound semiconductors. Space processing of these electronic crystals with maximum perfection, purity, and size is suggested. No ecomonic or technical justification was found for the growth of silicon single crystals for solid state electronic devices in space.

Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

Science.gov (United States)

Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

2012-05-21

Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

A high compression crystal growth system

International Nuclear Information System (INIS)

Nieman, H.F.; Walton, A.A.; Powell, B.M.; Dolling, G.

1980-01-01

This report describes the construction and operating procedure for a high compression crystal growth system, capable of growing single crystals from the fluid phase over the temperature range of 4.2 K to 300 K, at pressures up to 900 MPa. Some experimental results obtained with the system are given for solid β-nitrogen. (auth)

Growth and characterisation of lead iodide single crystals

International Nuclear Information System (INIS)

Tonn, Justus

2012-01-01

The work in hand deals with the growth and characterisation of lead iodide (PbI 2 ) single crystals. PbI 2 is regarded as a promising candidate for low-noise X- and gamma ray detection at room temperature. Its benefits if compared to conventional materials like HgI 2 , CdTe, Si, or GaAs lie in a band gap energy of 2.32 eV, an excellent ability to absorb radiation, and a high electrical resistivity. For an application of PbI 2 as detector material the growth and characterisation of crystals with high chemical and structural quality is extremely challenging. In light of this, the effectiveness of zone purification of the PbI 2 used for crystal growth was confirmed by spectroscopic analysis. Furthermore, technological aspects during processing of purified PbI 2 were investigated. With the help of thermal analysis, a correlation was found between the degree of exposing the source material to oxygen from the air and the structural quality of the resulting crystals. A hydrogen treatment was applied to PbI 2 as an effective method for the removal of oxidic pollutions, which resulted in a significant reduction of structural defects like polytypic growth and stress-induced cracking. The growth of PbI 2 single crystals was, among others, carried out by the Bridgman-Stockbarger method. In this context, much effort was put on the investigation of influences resulting from the design and preparation of ampoules. For the first time, crystal growth of PbI 2 was also carried out by the Czochralski method. If compared to the Bridgman-Stockbarger method, the Czochralski technique allowed a significantly faster growth of nearly crack-free crystals with a reproducible predetermination of crystallographic orientation. By an optimised sample preparation of PbI 2 , surface orientations perpendicular to the usually cleaved (0001) plane were realised. It is now possible to determine the material properties along directions which were so far not accessible. Thus, for example, the ratio of

Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

Science.gov (United States)

Wang, T.; Ciszek, T. F.

2006-01-10

In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Optical Investigation of Nanoconfined Crystal Growth

Science.gov (United States)

Kohler, F.; Dysthe, D. K.

2015-12-01

Crystals growing in a confined space exert forces on their surroundings. This crystallization force causes deformation of solids and is therefore particularly relevant for the comprehension of geological processes such as replacement and weathering [1]. In addition, these forces are relevant for the understanding of damages in porous building materials caused by crystallization, which is of great economical importance and fundamental for methods that can help to preserve our cultural heritage [2,3]. However, the exact behavior of the growth and the dissolution process in close contact to an interface are still not known in detail. The crystallization, the dissolution and the transport of material is mediated by a nanoconfined water film. We observe brittle NaClO3 crystals growing against a glass surface by optical methods such as reflective interference contrast microscopy (RICM) [4]. In order to carefully control the supersaturation of the fluid close to the crystal interface, a temperature regulated microfluidic system is used (fig. A). The interference based precision of RICM enables to resolve distance variations down to the sub nanometer range without any unwanted disturbances by the measuring method. The combination of RICM with a sensitive camera allows us to observe phenomena such as periodic, wavelike growth of atomic layers. These waves are particularly obvious when observing the difference between two consecutive images (fig. B). In contradiction to some theoretical results, which predict a smooth interface, some recent experiments have shown that the nanoconfined growth surfaces are rough. In combination with theoretical studies and Kinetic Monte Carlo simulations we aim at providing more realistic descriptions of surface energies and energy barriers which are able to explain the discrepancies between experiments and current theory. References:[1] Maliva, Diagenetic replacement controlled by force of crystallization, Geology, August (1988), v. 16 [2] G

A Study of Biomolecules as Growth Modifiers of Calcium Oxalate Crystals

Science.gov (United States)

Kwak, Junha John

Crystallization processes are ubiquitous in nature, science, and technology. Controlling crystal growth is pivotal in many industries as material properties and functions can be tailored by tuning crystal habits (e.g. size, shape, phase). In biomineralization, organisms exert excellent control over bottom-up synthesis and assembly of inorganic-organic structures (e.g. bones, teeth, exoskeletons). This is made possible by growth modifiers that range from small molecules to macromolecules, such as proteins. Molecular recognition of the mineral phase allows proteins to function as nucleation templates, matrices, and growth inhibitors or promoters. We are interested in taking a biomimetic approach to control crystallization via biomolecular growth modifiers. We investigated calcium oxalate monohydrate (COM), found in plants and kidney stones, as a model system of crystallization. We studied the effects of four common proteins on COM crystallization: bovine serum albumin (BSA), transferrin, lactoferrin, and lysozyme. Through kinetic studies of COM crystallization, we classified BSA and lysozyme as COM growth inhibitor and promoter respectively. Their inhibition and promotion effects were also evident in the macroscopic crystal habit. Through adsorption and microscopy experiments, we showed that BSA exhibits binding specificity for the apical surfaces of macroscopic COM crystals. Lysozyme, on the other, functions via a non-binding mechanism at the surface to accelerate the growth of the apical surfaces. We also synthesized and studied peptides derived from the protein primary sequences to identify putative domains responsible for these inhibition and promotion effects. Collectively, our study of physiologically relevant biomolecules suggests potential roles of COM modifiers in pathological crystallization and helps to develop guidelines for rational design of biomolecular growth modifiers for applications in crystal engineering.

Growth of emerald single crystals

International Nuclear Information System (INIS)

Bukin, G.V.; Godovikov, A.A.; Klyakin, V.A.; Sobolev, V.S.

1986-01-01

In addition to its use for jewelry, emerald can also be used in low-noise microwave amplifiers. The authors discuss flux crystallization of emerald and note that when emerald is grown by this method, it is desirable to use solvents which dissolve emerald with minimum deviations from congruence but at the same time with sufficient high efficiency. Emerald synthesis and crystal growth from slowly cooled solutions is discussed as another possibility. The techniques are examined. Vapor synthesis and growht of beryl crystals re reviewed and the authors experimentally study the seeded CVD crystallization of beryl from BeO, Al 2 O 3 and SiO 2 oxides, by using complex compounds as carrier agents. The color of crystals of emerald and other varieties of beryl is detemined by slelective light absorption in teh visible part of the spectrum and depends on the density and structural positions of chromphore ions: chromium, iron, vanadium, nickel, manganese and cobalt

Sapphire capillary interstitial irradiators for laser medicine

Science.gov (United States)

Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

2018-04-01

In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

Modeling and simulation of Si crystal growth from melt

Energy Technology Data Exchange (ETDEWEB)

Liu, Lijun; Liu, Xin; Li, Zaoyang [National Engineering Research Center for Fluid Machinery and Compressors, School of Energy and Power Engineering, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Miyazawa, Hiroaki; Nakano, Satoshi; Kakimoto, Koichi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan)

2009-07-01

A numerical simulator was developed with a global model of heat transfer for any crystal growth taking place at high temperature. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite volume method. A three-dimensional (3D) global model was especially developed for simulation of heat transfer in any crystal growth with 3D features. The model enables 3D global simulation be conducted with moderate requirement of computer resources. The application of this numerical simulator to a CZ growth and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, was introduced. Some typical results were presented, showing the importance and effectiveness of numerical simulation in analyzing and improving these kinds of Si crystal growth processes from melt. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

Science.gov (United States)

Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

2015-01-01

Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

High-pressure growth of NaMn7O12 crystals

International Nuclear Information System (INIS)

Gilioli, Edi; Calestani, Gianluca; Licci, Francesca; Paorici, Carlo; Gauzzi, Andrea; Bolzoni, Fulvio; Prodi, Andrea

2006-01-01

With the aim of producing large crystals of metastable NaMn 7 O 12 manganite, suitable for physical measurements (i.e.: RXS, Raman, EPR, STS, single-crystal neutron diffraction), we carried out a systematic investigation of the parameters controlling the growth of crystals, including the thermodynamic variables (T, P, and reagent composition) and the kinetic factors, such as reaction time and heating/cooling rate. By varying each parameter while maintaining constant the other ones, we found the thermodynamic conditions under which an optimum equilibrium is reached between the competing nucleation and growth rates. They were found to range between 400 and 700 o C (T) and between 20 and 60 Kbars (P), respectively. Under these conditions, we further optimized the growth process, by establishing the most appropriate growth duration (several hours), reagent type (pre-reacted precursor) and composition (presence of 0.4 mole% water and of 5% Na excess with respect to the stoichiometric composition). Typical crystals having several hundreds μm in linear sizes were reproducibly obtained, while the largest sample was about 800 μm. A description of the crystal growth mechanism, based on the experimental results, is also presented and discussed. It assumes that two different mechanisms control the crystal growth, depending on whether the crystallization is taking place outside the stability field, i.e. in presence of native reagents, or inside it, i.e. in a polycrystalline NaMn 7 O 12 phase matrix. In the first case, large crystal growth occurs thanks to the low nucleation and high diffusion rates, while in the second one the crystallization is due to the solid-state mechanism based on the free energy reduction caused by grain boundary migration. - Graphical abstract: Optical (a) and SEM images (b) of NaMn 7 O 12 crystals. Note the markers: 300 μm, top-right corner (a) and 40 μm, bottom left (b)

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

Science.gov (United States)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

Solid-melt interface structure and growth of Cu alloy single crystals

International Nuclear Information System (INIS)

Tomimitsu, Hiroshi; Kamada, Kohji.

1983-01-01

Crystal-melt interface behavior during the growth of Cu-base solid solutions by the Bridgman method is discussed on the basis of experimental evidence obtained by neutron diffraction topography. Advantages of neutron diffraction topography for the characterization of large single crystals, such as dealt with in this paper, are emphasized. Evidence was odserved of extremely regular crystal growth along directions, irrespective of the macroscopic growth direction. This contrasts with the previously believed (110) normal growth which is a conclusion of growth theory based on molecular kinetics at the solid-melt interface. In consequence, we believe that the kinetics at the interface is a minor factor in the meltgrowth of metal single crystals. Revised melt-growth theory should include both the growth and the formation of the regular structure as evidenced by neutron diffraction topography. (author)

Crystal growth of Li10B3O5

International Nuclear Information System (INIS)

Sugiyama, Akira; Gallagher, Hugh G.; Han, Thomas P.J.

1999-09-01

The growth of boron 10 isotope enriched L 10 BO (Li 10 B 3 O 5 ) optical crystal has been developed from Top-Seeded-Solution-Growth using a resistance furnace. In the preparation for growth materials, we have made further improvement on a charge loading technique to a crucible and succeeded in forming suitable high temperature flux for producing crystals. Adequate temperature gradient of 1K/cm inside the crucible was achieved from searching for a combination of setting temperatures in the vertical three-zone furnace and installing a ceramic ring under the crucible. We have also optimized seed holder configuration and established growth conditions by several attempts. As a result, two good quality L 10 BO crystals were produced with sizes of 14 x 25 x 22 mm and 13 x 10 x 12 mm from oriented seed crystals. Although these sizes were limited by the size of the crucible used, appropriate oriented samples were extracted for detailed studies in optical measurements. (author)

Crystal growth under external electric fields

International Nuclear Information System (INIS)

Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo

2014-01-01

This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal

Crystal growth under external electric fields

Energy Technology Data Exchange (ETDEWEB)

Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

2014-10-06

This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal.

Cross-twinning model of fcc crystal growth

NARCIS (Netherlands)

van de Waal, B.W.

1995-01-01

The theory developed in 1960 by Wagner, Hamilton and Seidensticker (WHS-theory) to explain observed crystal growth phenomena in Ge is critically reviewed and shown to be capable of explaining preservation of ABC stacking order in two dimensions in fcc crystals of effectively spherical closed shell

Approach for growth of high-quality and large protein crystals

Energy Technology Data Exchange (ETDEWEB)

Matsumura, Hiroyoshi, E-mail: matsumura@chem.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan); Sugiyama, Shigeru; Hirose, Mika; Kakinouchi, Keisuke; Maruyama, Mihoko; Murai, Ryota [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); Adachi, Hiroaki; Takano, Kazufumi [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan); Murakami, Satoshi [JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan); Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8501 (Japan); Mori, Yusuke; Inoue, Tsuyoshi [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan)

2011-01-01

Three crystallization methods, including crystallization in the presence of a semi-solid agarose gel, top-seeded solution growth (TSSG) and a large-scale hanging-drop method, have previously been presented. In this study, crystallization has been further evaluated in the presence of a semi-solid agarose gel by crystallizing additional proteins. A novel crystallization method combining TSSG and the large-scale hanging-drop method has also been developed. Three crystallization methods for growing large high-quality protein crystals, i.e. crystallization in the presence of a semi-solid agarose gel, top-seeded solution growth (TSSG) and a large-scale hanging-drop method, have previously been presented. In this study the effectiveness of crystallization in the presence of a semi-solid agarose gel has been further evaluated by crystallizing additional proteins in the presence of 2.0% (w/v) agarose gel, resulting in complete gelification with high mechanical strength. In TSSG the seed crystals are hung by a seed holder protruding from the top of the growth vessel to prevent polycrystallization. In the large-scale hanging-drop method, a cut pipette tip was used to maintain large-scale droplets consisting of protein–precipitant solution. Here a novel crystallization method that combines TSSG and the large-scale hanging-drop method is reported. A large and single crystal of lysozyme was obtained by this method.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

Science.gov (United States)

Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

2018-05-01

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

Controllable laser thermal cleavage of sapphire wafers

Science.gov (United States)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Growth and time dependent alignment of KCl crystals in Hemoglobin LB monolayer

International Nuclear Information System (INIS)

Mahato, Mrityunjoy; Pal, Prabir; Tah, Bidisha; Kamilya, Tapanendu; Talapatra, G.B.

2012-01-01

Nature and organism often use the biomineralization technique to build up various highly regular structures such as bone, teeth, kidney stone etc., and recently this becomes the strategy to design and synthesis of novel biocomposite materials. We report here the controlled crystallization of KCl in Langmuir and Langmuir Blodgett (LB) monolayer of Hemoglobin (Hb) at ambient condition. The nucleation and growth of KCl crystals in Hb monolayer has temporal and KCl concentration dependency. The growth of KCl crystals in LB film of Hb has distinct behavior in the alignment of crystals from linear to fractal like structures depending on growth time. The crystallographic identity of the biomineralized KCl crystal is confirmed from HR-TEM, XRD, and from powder diffraction simulation. Our results substantiated that the template of Langmuir monolayer of proteins plays a crucial role in biomineralization as well as in designing and synthesizing of novel biocomposite materials. Highlights: ► Biomineralization of KCl crystal has been studied in Hemoglobin LB film. ► KCl crystal growth is time and concentration of KCl dependent. ► The alignment of KCl crystal growth is fractal nature with time. ► The unfolding of Hb and evaporation factor has some role in crystallization and fractal growth.

Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method

Science.gov (United States)

Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi

1999-01-01

A new method for growing silicon crystals by using electromagnetic force to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski (EMCZ) growth. An electromagnetic force in the azimuthal direction is generated in the melt by the interaction between an electric current (I) through the melt in the radial direction and a vertical magnetic field (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I = 0 to 8 A and B = 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under two conditions: I = 2.0 A and B = 0.05 T (ωm = 105 rpm); and I =0.2 A and B = 0.1 T (ωm = 15 rpm). The oxygen concentration in the crystals was 8 ×1017 atoms/cm3 for the high rotation rate and 1×1017 atoms/cm3 for the low rotation rate. The oxygen-concentration distributions in the radial direction in both crystals were more homogeneous than those in the crystals grown by conventional CZ and/or MCZ growth. This new crystal-growth method can be easily adopted for growing large-diameter silicon crystals.

Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

Science.gov (United States)

Bolotnikov, Aleskey E [South Setauket, NY; James, Ralph B [Ridge, NY

2010-07-20

The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Growth and fabrication of large size sodium iodide crystal scintillator

International Nuclear Information System (INIS)

Sabharwal, S.C.; Karandikar, S.C.; Mirza, T.; Ghosh, B.; Deshpande, R.Y.

1979-01-01

The growth of 80 - 135 mm dia. Sodium iodide crystals activated with thallium is described in the present report. The growth is effected in a glazed porcelain crucible in a protective ambient of dry nitrogen. The technical details of the equipment developed have been fully described. The results of measurements on the rate of growth of crystal and the optimization of different growth parameters are reported. The dependence of various factors upon the performance characteristics of the scintillator detectors made using these crystals is also discussed. The energy resolution obtained for a typical detector of dimensions 76 mm dia x 76 mm ht. is 10 percent. (auth.)

Ultra-large single crystals by abnormal grain growth.

Science.gov (United States)

Kusama, Tomoe; Omori, Toshihiro; Saito, Takashi; Kise, Sumio; Tanaka, Toyonobu; Araki, Yoshikazu; Kainuma, Ryosuke

2017-08-25

Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.

Development of n- and p-type Doped Perovskite Single Crystals Using Solid-State Single Crystal Growth (SSCG) Technique

Science.gov (United States)

2017-10-09

for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for

Optimized Pyroelectric Vidicon Thermal Imager. Volume II. Improper Ferroelectric Crystal Growth.

Science.gov (United States)

1980-09-01

4.2.1 Apparatus .......................... 77 4.2.2 Growth from Acidic Media .................o 78 4.2.3 Hydrothermal Growth in Basic Media ...... 99...method of hydrothermal growth was examined using both acidic and basic solvents. (1) Standard Composition Our standard composition was derived from... Acid 10 Good, well formed crystals. Acrylic Acid 10 Very good, clear crystals. Glycine 10 Poor crystals. Oxalic Acid 10 Precipitation of calcium and

Monte Carlo simulation of continuous-space crystal growth

International Nuclear Information System (INIS)

Dodson, B.W.; Taylor, P.A.

1986-01-01

We describe a method, based on Monte Carlo techniques, of simulating the atomic growth of crystals without the discrete lattice space assumed by conventional Monte Carlo growth simulations. Since no lattice space is assumed, problems involving epitaxial growth, heteroepitaxy, phonon-driven mechanisms, surface reconstruction, and many other phenomena incompatible with the lattice-space approximation can be studied. Also, use of the Monte Carlo method circumvents to some extent the extreme limitations on simulated timescale inherent in crystal-growth techniques which might be proposed using molecular dynamics. The implementation of the new method is illustrated by studying the growth of strained-layer superlattice (SLS) interfaces in two-dimensional Lennard-Jones atomic systems. Despite the extreme simplicity of such systems, the qualitative features of SLS growth seen here are similar to those observed experimentally in real semiconductor systems

Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

Science.gov (United States)

Su, Ching-Hua

2014-01-01

A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

Crystal growth of various ruthenates

Energy Technology Data Exchange (ETDEWEB)

Kunkemoeller, Stefan; Braden, Markus [II. Physikalisches Institut, Universitaet zu Koeln (Germany); Nugroho, Agung [Institut Teknologi Bandung (Indonesia)

2013-07-01

Ruthenates of the Ruddlesdon-Popper series exhibit a variety of interesting phenomena ranging from unconventional superconductivity to orbitally polarized Mott insulators. Unfortunately the crystal growth of most of these ruthenates is extremely difficult partially due to the high evaporation of ruthenium; this strongly limits the research on these fascinating materials. We have started to grow single crystals of layered and perovskite ruthenates by the travelling floating-zone method using a Canon SC1-MDH mirror furnace. For the layered Ca{sub 2-x}Sr{sub x}RuO{sub 4} series we focused first on the range of concentration where recent My-SR experiments reveal spin-density wave ordering to occur at relatively high temperature and with a sizeable ordered moment. Good quality crystals of Ca{sub 1.5}Sr{sub 0.5}RuO{sub 4} can be obtained, when an excess of 15 percent of ruthenium is added to the initial preparation of the rod and when a high growth speed up to 40mm/h is used. Even slight modifications of the growing conditions result in large amounts of (Sr/Ca)RuO{sub 3} and (Sr/Ca){sub 3}Ru{sub 2}O{sub 7} intergrowth phases. First attempts to grow perovskite and double-layered ruthenates are discussed as well.

The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

2010-07-15

The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

International Nuclear Information System (INIS)

Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

2011-01-01

Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

Coherent anti-Stokes Raman scattering microscopy with a photonic crystal fiber based light source

DEFF Research Database (Denmark)

Paulsen, H.N.; Hilligsøe, Karen Marie; Thøgersen, J.

2003-01-01

A coherent anti-Stokes Raman scattering microscope based on a Ti:sapphire femtosecond oscillator and a photonic crystal fiber is demonstrated. The nonlinear response of the fiber is used to generate the additional wavelength needed in the Raman process. The applicability of the setup is demonstra......A coherent anti-Stokes Raman scattering microscope based on a Ti:sapphire femtosecond oscillator and a photonic crystal fiber is demonstrated. The nonlinear response of the fiber is used to generate the additional wavelength needed in the Raman process. The applicability of the setup...

Formation and growth mechanism of TiC crystal in TiCp/Ti composites

Institute of Scientific and Technical Information of China (English)

金云学; 王宏伟; 曾松岩; 张二林

2002-01-01

Ti-C and Ti-Al-C alloys were prepared using gravity and directional solidification processes. Morphologies of TiC crystal were investigated by using SEM, XRD and EDX. Also, the formation and growth mechanism of TiC crystal have been analyzed on the basis of coordination polyhedron growth unit theory. During solidification of titanium alloys, the coordination polyhedron growth unit is TiC6. TiC6 growth units stack in a linking mode of edge to edge and form octahedral TiC crystal with {111} planes as present faces. Although the growing geometry of TiC crystal is decided by its lattice structure, the final morphology of TiC crystal depends on the effects of its growth environment. In solute concentration distribution, the super-saturation of C or TiC6 at the corners of octahedral TiC crystal is much higher than that of edges and faces of octahedral TiC crystal. At these corners the driving force for crystal growth is greater and the interface is instable which contribute to quick stacking rate of growth units at these corners and result in secondary dendrite arms along TiC crystallographic 〈100〉 directions. TiC crystal finally grows to be dendrites.

Hydrothermal growth of PbSO4 (Anglesite) single crystal

International Nuclear Information System (INIS)

Kikuta, Ko-ichi; Yoneta, Yasuhito; Yogo, Toshinobu; Hirano, Shin-ichi

1994-01-01

Hydrothermal growth of single crystals of PbSO 4 , which is known as a natural mineral called anglesite, was investigated. Lead nitrate and nitric acid solutions were found to be useful for the growth of angle-site on the basis of the experimental results on the dissolution behavior. Relatively large euhedral single crystals bound by {210} and {101} planes were successfully grown in 1.5 mol/kg Pb(NO 3 ) 2 at 400degC and 100 MPa. Optical characterization revealed that the grown anglesite crystals can be useful for scintillators material. (author)

Heteroepitaxial silicon film growth at 600 oC from an Al-Si eutectic melt

International Nuclear Information System (INIS)

Chaudhari, P.; Shim, Heejae; Wacaser, Brent A.; Reuter, Mark C.; Murray, Conal; Reuter, Kathleen B.; Jordan-Sweet, Jean; Ross, Frances M.; Guha, Supratik

2010-01-01

A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 o C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 o C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications.

Oleophobic properties of the step-and-terrace sapphire surface

Energy Technology Data Exchange (ETDEWEB)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

2017-03-15

Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.

Growth, morphology, spectral and thermal studies of gel grown diclofenac acid crystals

Science.gov (United States)

Ramachandran, E.; Ramukutty, S.

2014-03-01

The crystal growth of diclofenac acid in silica gel is the first to be reported in literature. The growth parameters were varied to optimize the suitable growth condition. Single crystal X-ray diffraction method was used for the conformation of the crystal structure. Morphology studies showed that the growth is prominent along the b-axis and the prominent face is {002}. Fourier transform infrared spectral study was performed to identify the functional groups present in the crystal. Thermal stability and decomposition of the material were analyzed using thermo calorimetry in the temperature range 30-500 °C.

Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

DEFF Research Database (Denmark)

Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

2017-01-01

higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

Inhibition of ice crystal growth in ice cream mix by gelatin hydrolysate.

Science.gov (United States)

Damodaran, Srinivasan

2007-12-26

The inhibition of ice crystal growth in ice cream mix by gelatin hydrolysate produced by papain action was studied. The ice crystal growth was monitored by thermal cycling between -14 and -12 degrees C at a rate of one cycle per 3 min. It is shown that the hydrolysate fraction containing peptides in the molecular weight range of about 2000-5000 Da exhibited the highest inhibitory activity on ice crystal growth in ice cream mix, whereas fractions containing peptides greater than 7000 Da did not inhibit ice crystal growth. The size distribution of gelatin peptides formed in the hydrolysate was influenced by the pH of hydrolysis. The optimum hydrolysis conditions for producing peptides with maximum ice crystal growth inhibitory activity was pH 7 at 37 degrees C for 10 min at a papain to gelatin ratio of 1:100. However, this may depend on the type and source of gelatin. The possible mechanism of ice crystal growth inhibition by peptides from gelatin is discussed. Molecular modeling of model gelatin peptides revealed that they form an oxygen triad plane at the C-terminus with oxygen-oxygen distances similar to those found in ice nuclei. Binding of this oxygen triad plane to the prism face of ice nuclei via hydrogen bonding appears to be the mechanism by which gelatin hydrolysate might be inhibiting ice crystal growth in ice cream mix.

Surface study of irradiated sapphires from Phrae Province, Thailand using AFM

Science.gov (United States)

Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.

2017-09-01

The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.

Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

International Nuclear Information System (INIS)

Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

1986-01-01

This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

International Nuclear Information System (INIS)

Makino, Hisao; Song, Huaping; Yamamoto, Tetsuya

2014-01-01

The Ga-doped ZnO (GZO) films deposited on glass and c-plane sapphire substrates have been comparatively studied in order to explore the role of grain boundaries in electrical properties. The influences of oxygen gas flow rates (OFRs) during the deposition by ion-plating were examined. The dependences of carrier concentration, lattice parameters, and characteristic of thermal desorption of Zn on the OFR showed common features between glass and sapphire substrates, however, the Hall mobility showed different behavior. The Hall mobility of GZO films on glass increased with increasing OFR of up to 15 sccm, and decreased with further increasing OFR. On the other hand, the Hall mobility of GZO films on c-sapphire increased for up to 25 sccm. The role of grain boundary in polycrystalline GZO films has been discussed. - Highlights: • Ga-doped ZnO films were deposited on glass and c-sapphire by ion-plating. • The epitaxial growth on c-sapphire was confirmed by X-ray diffraction. • Dependence of Hall mobility showed different tendency between glass and sapphire. • Grain boundaries influence transport properties at high O 2 gas flow rate

Silicon crystal growth using a liquid-feeding Czochralski method

Science.gov (United States)

Shiraishi, Yutaka; Kurosaka, Shoei; Imai, Masato

1996-09-01

Silicon single crystals with uniformity along the growth direction were grown using a new continuous Czochralski (CCZ) method. Polycrystalline silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other substances. Using this method, silicon crystals with diameters as large as 6 or 8 inch and good uniformity along the growth direction were grown.

Potassium-cobalt sulphate crystal growth assisted by low frequency vibrations

Science.gov (United States)

Sadovsky, A.; Ermochenkov, I.; Dubovenko, E.; Sukhanova, E.; Bebyakin, M.; Dubov, V.; Avetissov, I.

2018-02-01

Single crystals of K2Co(SO4)2·6H2O were grown from solution using the temperature reduction method enhanced by the axial low frequency vibration control technique (AVC-technique). Physical modeling of heat-mass transfer in solution under the AVC action was performed. The growth rate of the AVC grown crystal was found to be twice that of the crystal grown under natural convection conditions. Analysis of spectral characteristics (absorption and Raman spectra) as well as structural properties (dislocation density and microhardness) of the grown crystals showed the significant superiority of the AVC technique for the growth of K2Co(SO4)2·6H2O crystals.

Needle-shaped and platelet growth of borax crystals

International Nuclear Information System (INIS)

Takoo, R.K.; Patel, B.R.; Joshi, M.S.

1983-01-01

Needle-shaped and platelet growth of borax crystals from solutions is reported. Results of microtopographical studies on both the varieties are discussed. It is suggested that a slow rate of evaporation favours needle growth and a faster rate is conducive to the growth of platelets. (author)

Leveraging Python Interoperability Tools to Improve Sapphire's Usability

Energy Technology Data Exchange (ETDEWEB)

Gezahegne, A; Love, N S

2007-12-10

The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

Science.gov (United States)

Maskell, P.; Oram, L.

The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

Mechanism of abnormally slow crystal growth of CuZr alloy

International Nuclear Information System (INIS)

Yan, X. Q.; Lü, Y. J.

2015-01-01

Crystal growth of the glass-forming CuZr alloy is shown to be abnormally slow, which suggests a new method to identify the good glass-forming alloys. The crystal growth of elemental Cu, Pd and binary NiAl, CuZr alloys is systematically studied with the aid of molecular dynamics simulations. The temperature dependence of the growth velocity indicates the different growth mechanisms between the elemental and the alloy systems. The high-speed growth featuring the elemental metals is dominated by the non-activated collision between liquid-like atoms and interface, and the low-speed growth for NiAl and CuZr is determined by the diffusion across the interface. We find that, in contrast to Cu, Pd, and NiAl, a strong stress layering arisen from the density and the local order layering forms in front of the liquid-crystal interface of CuZr alloy, which causes a slow diffusion zone. The formation of the slow diffusion zone suppresses the interface moving, resulting in much small growth velocity of CuZr alloy. We provide a direct evidence of this explanation by applying the compressive stress normal to the interface. The compression is shown to boost the stress layering in CuZr significantly, correspondingly enhancing the slow diffusion zone, and eventually slowing down the crystal growth of CuZr alloy immediately. In contrast, the growth of Cu, Pd, and NiAl is increased by the compression because the low diffusion zones in them are never well developed

Crystal growth and scintillation properties of Lu substituted CeBr.sub.3./sub. single crystals

Czech Academy of Sciences Publication Activity Database

Ito, T.; Yokota, Y.; Kurosawa, S.; Král, Robert; Kamada, K.; Pejchal, Jan; Ohashi, Y.; Yoshikawa, A.

2016-01-01

Roč. 452, Oct (2016), s. 65-68 ISSN 0022-0248. [American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015] Institutional support: RVO:68378271 Keywords : radiation * halides * scintillator materials * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.751, year: 2016

Time-Lapse, in Situ Imaging of Ice Crystal Growth Using Confocal Microscopy.

Science.gov (United States)

Marcellini, Moreno; Noirjean, Cecile; Dedovets, Dmytro; Maria, Juliette; Deville, Sylvain

2016-11-30

Ice crystals nucleate and grow when a water solution is cooled below its freezing point. The growth velocities and morphologies of the ice crystals depend on many parameters, such as the temperature of ice growth, the melting temperature, and the interactions of solutes with the growing crystals. Three types of morphologies may appear: dendritic, cellular (or fingerlike), or the faceted equilibrium form. Understanding and controlling which type of morphology is formed is essential in several domains, from biology to geophysics and materials science. Obtaining, in situ, three dimensional observations without introducing artifacts due to the experimental technique is nevertheless challenging. Here we show how we can use laser scanning confocal microscopy to follow in real-time the growth of smoothed and faceted ice crystals in zirconium acetate solutions. Both qualitative and quantitative observations can be made. In particular, we can precisely measure the lateral growth velocity of the crystals, a measure otherwise difficult to obtain. Such observations should help us understand the influence of the parameters that control the growth of ice crystals in various systems.

Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

Energy Technology Data Exchange (ETDEWEB)

Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

2016-09-15

Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

International Nuclear Information System (INIS)

Greene, J.E.

1984-01-01

The understanding of the physics of ion-surface interactions has progressed sufficiently to allow sputter depositinn to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. Part 1 of this review includes sections on experimental techniques, the physics of ion-surface interactions, and ion bombardment effects on film nucleation and growth, while Part 2 presents a discussion of recent results in the growth of elemental, III-V, II-VI, IV-VI, metastable, and other compound semiconductors

Protein crystal growth results from the United States Microgravity Laboratory-1 mission

Science.gov (United States)

Delucas, Lawrence J.; Moore, K. M.; Vanderwoerd, M.; Bray, T. L.; Smith, C.; Carson, M.; Narayana, S. V. L.; Rosenblum, W. M.; Carter, D.; Clark, A. D, Jr.

1994-01-01

Protein crystal growth experiments have been performed by this laboratory on 18 Space Shuttle missions since April, 1985. In addition, a number of microgravity experiments also have been performed and reported by other investigators. These Space Shuttle missions have been used to grow crystals of a variety of proteins using vapor diffusion, liquid diffusion, and temperature-induced crystallization techniques. The United States Microgravity Laboratory - 1 mission (USML-1, June 25 - July 9, 1992) was a Spacelab mission dedicated to experiments involved in materials processing. New protein crystal growth hardware was developed to allow in orbit examination of initial crystal growth results, the knowledge from which was used on subsequent days to prepare new crystal growth experiments. In addition, new seeding hardware and techniques were tested as well as techniques that would prepare crystals for analysis by x-ray diffraction, a capability projected for the planned Space Station. Hardware that was specifically developed for the USML-1 mission will be discussed along with the experimental results from this mission.

New developments on size-dependent growth applied to the crystallization of sucrose

Science.gov (United States)

Martins, P. M.; Rocha, F.

2007-12-01

The effect of crystal size on the growth rate of sucrose (C 12H 22O 11) at 40 °C is investigated from a theoretical and an experimental point of view. Based on new perspectives resulting from the recently introduced spiral nucleation model [P.M. Martins, F. Rocha, Surf. Sci. 601 (2007) 3400], crystal growth rates are expressed in terms of mass deposition per time and crystal volume units. This alternative definition is demonstrated to be size-independent over the considered supersaturation range. The conventional overall growth rate expressed per surface area units is found to be linearly dependent on crystal size. The advantages of the "volumetric" growth rate concept are discussed. Sucrose dissolution rates were measured under reciprocal conditions of the growth experiments in order to investigate the two-way effect of crystal size on mass transfer rates and on the integration kinetics. Both effects are adequately described by combining a well-established diffusion-integration model and the spiral nucleation mechanism.

Spatial chirp in Ti:sapphire multipass amplifier

International Nuclear Information System (INIS)

Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

2017-01-01

The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

Nanostructured sapphire optical fiber for sensing in harsh environments

Science.gov (United States)

Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

2017-05-01

We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

Surface growth mechanisms and structural faulting in the growth of large single and spherulitic titanosilicate ETS-4 crystals

Science.gov (United States)

Miraglia, Peter Q.; Yilmaz, Bilge; Warzywoda, Juliusz; Sacco, Albert

2004-10-01

Morphological, surface and crystallographic analyses of titanosilicate ETS-4 products, with diverse habits ranging from spherulitic particles composed of submicron crystallites to large single crystals, are presented. Pole figures revealed that crystal surfaces with a-, b- and c- axes corresponded to , and directions, respectively. Thus, technologically important 8-membered ring pores and titania chains in ETS-4 run along the b-axis of single crystals and terminate at the smallest crystal face. Height of the spiral growth steps observed on {1 0 0} and {0 0 1} surfaces corresponded to the interplanar spacings associated with their crystallographic orientation, and is equivalent to the thickness of building units that form the ETS-4 framework. Data suggest that the more viscous synthesis mixtures, with a large driving force for growth, increased the two- and three-dimensional nucleation, while limiting the transport of nutrients to the growth surface. These conditions increase the tendency for stacking fault formation on {1 0 0} surfaces and small angle branching, which eventually results in spherulitic growth. The growth of high quality ETS-4 single crystals (from less viscous synthesis mixtures) occurred at lower surface nucleation rates. Data suggest that these high quality, large crystals grew due to one-dimensional nucleation at spiral hillocks, and indicate that under these conditions un-faulted growth is preferred.

The 1993 annual conference of the Israeli Association for Crystal Growth. Program and abstracts

International Nuclear Information System (INIS)

1993-11-01

Papers presented in oral and poster sessions of one day conference, organized by Israeli Association for Crystal Growth, are compiled in this document. Main topics covered in this document can be classified as: (i) Fundamental and numerical analysis of crystal growth. (ii) Techniques of crystal growth and structural analysis. (iii) Thin film growth and characterization

Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

Science.gov (United States)

Gupta, Pranav

This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

Science.gov (United States)

Omar, Al-Zuhairi; Shuhaimi Bin Abu Bakar, Ahmad; Makinudin, Abdullah Haaziq Ahmad; Khudus, Muhammad Imran Mustafa Abdul; Azman, Adreen; Kamarundzaman, Anas; Supangat, Azzuliani

2018-05-01

The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.

Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

International Nuclear Information System (INIS)

Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

2016-01-01

High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices. (paper)

Growth features of ammonium hydrogen d-tartrate single crystals

Indian Academy of Sciences (India)

Unknown

Abstract. Ammonium hydrogen d-tartrate (d-AHT) single crystals were grown in silica gel. The growth fea- ... solution (specific gravity, 1⋅04 g/cc) with d-tartaric acid solution having ... resulting in the production of crystal nuclei. The interface.

Crystal growth of CVD diamond and some of its peculiarities

CERN Document Server

Piekarczyk, W

1999-01-01

Experiments demonstrate that CVD diamond can form in gas environments that are carbon undersaturated with respect to diamond. This fact is, among others, the most serious violation of principles of chemical thermodynamics. In this $9 paper it is shown that none of the principles is broken when CVD diamond formation is considered not a physical process consisting in growth of crystals but a chemical process consisting in accretion of macro-molecules of polycyclic $9 saturated hydrocarbons belonging to the family of organic compounds the smallest representatives of which are adamantane, diamantane, triamantane and so forth. Since the polymantane macro-molecules are in every respect identical with $9 diamond single crystals with hydrogen-terminated surfaces, the accretion of polymantane macro- molecules is a process completely equivalent to the growth of diamond crystals. However, the accretion of macro-molecules must be $9 described in a way different from that used to describe the growth of crystals because so...

Face-selective crystal growth behavior of L-aspartic acid in the presence of L-asparagine

Science.gov (United States)

Sato, Hiroyasu; Doki, Norihito; Yoshida, Saki; Yokota, Masaaki; Shimizu, Kenji

2016-02-01

The kinetic mechanism of L-asparagine (L-Asn) action on L-aspartic acid (L-Asp) crystal growth, namely the face-selective effect of L-Asn on the L-Asp crystal growth rate in each direction, was examined. In the a-axis direction, the effect of L-Asn on the L-Asp crystal growth rate was small. Enhancement and inhibition of L-Asp crystal growth, and interestingly the dissolution of the L-Asp crystal face, were observed in the b-axis direction, depending on the amount of L-Asn added. In the c-axis direction, the L-Asp crystal growth rate decreased with the increase in the amount of L-Asn added, and the experimental results were well fitted with a Langmuir adsorption isotherm. The study showed that there were crystal growth conditions where enhancement and inhibition, as well as inhibition and dissolution, coexisted in the presence of an additive with a structure similar to the growing crystal.

Meniscus Imaging for Crystal-Growth Control

Science.gov (United States)

Sachs, E. M.

1983-01-01

Silicon crystal growth monitored by new video system reduces operator stress and improves conditions for observation and control of growing process. System optics produce greater magnification vertically than horizontally, so entire meniscus and melt is viewed with high resolution in both width and height dimensions.

Insights into crystal growth rates from a study of orbicular granitoids from western Australia

Science.gov (United States)

Zhang, J.; Lee, C. T.

2017-12-01

The purpose of this study is to develop new tools for constraining crystal growth rate in geologic systems. Of interest is the growth of crystals in magmatic systems because crystallization changes the rheology of a magma as well as provides surfaces on which bubbles can nucleate. To explore crystal growth in more detail, we conducted a case study of orbicular granitoids from western Australia. The orbicules occur as spheroids dispersed in a granitic matrix. Most orbicules have at least two to three concentric bands, composed of elongate and radially oriented hornblende surrounded by interstitial plagioclase. We show that mineral modes and hence bulk composition at the scale of the band is homogeneous from rim to core. Crystal number density decreases and crystal size increases from rim to core. These observations suggest that the orbicules crystallized rapidly from rim to core. We hypothesize that the orbicules are blobs of hot dioritic liquid injected into a cold granitic magma and subsequently cooled and solidified. Crystals stop growing when the mass transport rate tends to zero due to the low temperature. We estimated cooling timescales based on conductive cooling models, constraining crystal growth rates to be 10-6 to 10-5 m/s. We also show that the oscillatory banding is controlled by disequilibrium crystallization, wherein hornblende preferentially crystallizes, resulting in the diffusive growth of a chemical boundary layer enriched in plagioclase component, which in turns results in crystallization of plagioclase. We show that the correlation between the width of each crystallization couplet (band) with distance from orbicule rim is linear, with the slope corresponding to the square root of the ratio between chemical diffusivity in the growth medium and thermal diffusivity. We estimate chemical diffusivity of 2*10-7 m2/s, which is remarkably fast for silicate liquids but reasonable for diffusion in hot aqueous fluids, suggesting that crystallization

Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

Energy Technology Data Exchange (ETDEWEB)

Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)

2015-08-28

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

Growth of methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals

Science.gov (United States)

Perigaud, A.; Nicolau, Y. F.

1986-12-01

Methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals, 1 cm in diameter and 7 cm in length have been grown by a travelling-heater-Bridgman method in polyethylene tubes introduced into glass ampoules, at a growth rate of 1.5-6 mm/day. The starting material was synthesised and purified by recrystallization from methanol and by vacuum evaporation to a purity of 99.994%. The period of growth, and hence the length of the crystal, is limited due to melt decomposition and polycondensation. The b-axis of the crystals is always oriented at about 72° to the ampoule axis. Good quality single crystals have been obtained giving a FWHM of the Cu Kα (040) rocking curve of about 1'.

Magnetic Control in Crystal Growth from a Melt

Science.gov (United States)

Huang, Yue

Control of bulk melt crystal growth techniques is desirable for producing semiconductors with the highest purity and ternary alloys with tunable electrical properties. Because these molten materials are electrically conducting, external magnetic fields are often employed to regulate the flow in the melt. However, complicated by the coupled flow, thermal, electromagnetic and chemical physics, such magnetic control is typically empirical or even an educated guess. Two magnetic flow control mechanisms: flow damping by steady magnetic fields, and flow stirring by alternating magnetic fields, are investigated numerically. Magnetic damping during optically-heated float-zone crystal growth is modeled using a spectral collocation method. The Marangoni convection at the free melt-gas interface is suppressed when exposed to a steady axial magnetic field, measured by the Hartmann number Ha. As a result, detrimental flow instabilities are suppressed, and an almost quiescent region forms in the interior, ideal for single crystal growth. Using normal mode linear stability analyses, dominant flow instabilities are determined in a range applicable to experiments (up to Ha = 300 for Pr = 0.02, and up to Ha = 500 for Pr = 0.001). The hydrodynamic nature of the instability for small Prandtl number Pr liquid bridges is confirmed by energy analyses. Magnetic stirring is modeled for melt crystal growth in an ampule exposed to a transverse rotating magnetic field. Decoupled from the flow field at small magnetic Reynolds number, the electromagnetic field is first solved via finite element analysis. The flow field is then solved using the spectral element method. At low to moderate AC frequencies (up to a few kHz), the electromagnetic body force is dominant in the azimuthal direction, which stirs a steady axisymmetric flow primarily in the azimuthal direction. A weaker secondary flow develops in the meridional plane. However, at high AC frequencies (on the order of 10 kHz and higher), only

ICCG-10: Tenth International Conference on Crystal Growth. Poster presentation abstracts

Science.gov (United States)

1992-01-01

Poster presentation abstracts from the tenth International Conference on Crystal Growth (ICCG) (Aug. 16-21, 1992) are provided. Topics discussed at the conference include crystal growth mechanisms, superconductors, semiconductors, laser materials, optical materials, and biomaterials. Organizing committees, ICCG advisory board and officers, and sponsors of the conference are also included.

Optical and structural behaviour of Mn implanted sapphire

International Nuclear Information System (INIS)

Marques, C.; Franco, N.; Kozanecki, A.; Silva, R.C. da; Alves, E.

2006-01-01

Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 x 10 17 cm -2 . The samples were annealed at 1000 deg. C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 x 10 16 cm -2 , as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl 2 O 4 . On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission

A versatile Czochralski crystal growth system with automatic diameter control

Science.gov (United States)

Aggarwal, M. D.; Metzl, R.; Wang, W. S.; Choi, J.

1995-07-01

A versatile Czochralski crystal pulling system with automatic diameter control for the growth of nonlinear optical oxide crystals is discussed. Pure and doped bulk single crystals of bismuth silicon oxide (Bi12SiO20) have been successfully grown using this system. The system consists of a regular Czochralski type pulling system with provision for continuous weighing of the growing crystal to provide feedback for power control.

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Synthesis, growth, crystal structure, optical and third order nonlinear optical properties of quinolinium derivative single crystal: PNQI

Science.gov (United States)

Karthigha, S.; Krishnamoorthi, C.

2018-03-01

An organic quinolinium derivative nonlinear optical (NLO) crystal, 1-ethyl-2-[2-(4-nitro-phenyl)-vinyl]-quinolinium iodide (PNQI) was synthesized and successfully grown by slow evaporation solution growth technique. Formation of a crystalline compound was confirmed by single crystal X-ray diffraction. The quinolinium compound PNQI crystallizes in the triclinic crystal system with a centrosymmetric space group of P-1 symmetry. The molecular structure of PNQI was confirmed by 1H NMR and 13C NMR spectral studies. The thermal properties of the crystal have been investigated by thermogravimetric (TG) and differential scanning calorimetry (DSC) studies. The optical characteristics obtained from UV-Vis-NIR spectral data were described and the cut-off wavelength observed at 506 nm. The etching study was performed to analyse the growth features of PNQI single crystal. The third order NLO properties such as nonlinear refractive index (n2), nonlinear absorption coefficient (β) and nonlinear susceptibility (χ (3)) of the crystal were investigated using Z-scan technique at 632.8 nm of Hesbnd Ne laser.

Crystal structure and crystal growth of the polar ferrimagnet CaBaFe4O7

Science.gov (United States)

Perry, R. S.; Kurebayashi, H.; Gibbs, A.; Gutmann, M. J.

2018-05-01

Magnetic materials are a cornerstone for developing spintronic devices for the transport of information via magnetic excitations. To date, relatively few materials have been investigated for the purpose of spin transport, mostly due to the paucity of suitable candidates as these materials are often chemically complex and difficult to synthesize. We present the crystal growth and a structure solution on the high-temperature crystal structure of the layered, polar ferrimagnet CaBaFe4O7 , which is a possible new contender for spintronics research. The space group is identified as P 3 by refinement of single crystal and powder neutron diffraction data. At 400 K, the trigonal lattice parameters are a =11.0114 (11 )Å and c =10.330 (3 )Å . The structure is similar to the low-temperature phase with alternating layers of triangular and Kagome-arranged Fe-O tetrahedra. We also present details of the crystal growth by traveling solvent method.

Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

Energy Technology Data Exchange (ETDEWEB)

Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

2014-09-30

This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

Supersaturation Control using Analytical Crystal Size Distribution Estimator for Temperature Dependent in Nucleation and Crystal Growth Phenomena

Science.gov (United States)

Zahari, Zakirah Mohd; Zubaidah Adnan, Siti; Kanthasamy, Ramesh; Saleh, Suriyati; Samad, Noor Asma Fazli Abdul

2018-03-01

The specification of the crystal product is usually given in terms of crystal size distribution (CSD). To this end, optimal cooling strategy is necessary to achieve the CSD. The direct design control involving analytical CSD estimator is one of the approaches that can be used to generate the set-point. However, the effects of temperature on the crystal growth rate are neglected in the estimator. Thus, the temperature dependence on the crystal growth rate needs to be considered in order to provide an accurate set-point. The objective of this work is to extend the analytical CSD estimator where Arrhenius expression is employed to cover the effects of temperature on the growth rate. The application of this work is demonstrated through a potassium sulphate crystallisation process. Based on specified target CSD, the extended estimator is capable of generating the required set-point where a proposed controller successfully maintained the operation at the set-point to achieve the target CSD. Comparison with other cooling strategies shows a reduction up to 18.2% of the total number of undesirable crystals generated from secondary nucleation using linear cooling strategy is achieved.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

International Nuclear Information System (INIS)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-01-01

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Unidirectional growth and characterization of L-arginine monohydrochloride monohydrate single crystals

International Nuclear Information System (INIS)

Sangeetha, K.; Babu, R. Ramesh; Bhagavannarayana, G.; Ramamurthi, K.

2011-01-01

Highlights: → L-Arginine monohydrochloride monohydrate (LAHCl) single crystal was grown successfully by unidirectional solution growth method for the first time. → High crystalline perfection was observed for UDS grown crystal compared to CS grown crystal. → The optical transparency and mechanical stability are high for UDS grown LAHCl single crystal. → Optical birefringence measurement on this material. → The piezoelectric resonance frequencies observation - first time observation on this material. - Abstract: L-Arginine monohydrochloride monohydrate (LAHCl) single crystals were grown successfully by conventional and unidirectional solution growth methods. The crystalline perfection of grown crystals was analyzed by high-resolution X-ray diffraction. The linear optical transmittance, mechanical stability of conventional and unidirectional grown LAHCl single crystals were analyzed and compared along (0 0 1) plane. The refractive index and birefringence of LAHCl single crystals were also measured using He-Ne laser source. From the dielectric studies, piezoelectric resonance frequencies were observed in kHz frequency range for both conventional and unidirectional grown LAHCl single crystals along (0 0 1) plane.

Crystal growth velocity in deeply undercooled Ni-Si alloys

Science.gov (United States)

Lü, Y. J.

2012-02-01

The crystal growth velocity of Ni95Si5 and Ni90Si10 alloys as a function of undercooling is investigated using molecular dynamics simulations. The modified imbedded atom method potential yields the equilibrium liquidus temperatures T L ≈ 1505 and 1387 K for Ni95Si5 and Ni90Si10 alloys, respectively. From the liquidus temperatures down to the deeply undercooled region, the crystal growth velocities of both the alloys rise to the maximum with increasing undercooling and then drop slowly, whereas the athermal growth process presented in elemental Ni is not observed in Ni-Si alloys. Instead, the undercooling dependence of the growth velocity can be well-described by the diffusion-limited model, furthermore, the activation energy associated with the diffusion from melt to interface increases as the concentration increases from 5 to 10 at.% Si, resulting in the remarkable decrease of growth velocity.

The performance studies of DKDP crystals grown by a rapid horizontal growth method

Science.gov (United States)

Xie, Xiaoyi; Qi, Hongji; Wang, Bin; Wang, Hu; Chen, Duanyang; Shao, Jianda

2018-04-01

A deuterated potassium dihydrogen phosphate (DKDP) crystal with about 70% deuterium level was grown by a rapid horizontal growth method with independent design equipment, which includes a continuous filtration system. The cooling program during crystal growth was designed according to a self-developed software to catch the size of growing crystal in real time. The crystal structure, optical performance and laser induced damage threshold (LIDT) of this DKDP crystal were investigated in this paper. The deuterium concentration of the crystal was confirmed by the neutron diffraction technique, which was effective and available in determining a complete range of deuteration level. The dielectric property was measured to evaluate the perfection of the lattice. The transmittance and LIDT were carried out further to evaluate the optical and functional properties of this DKDP crystal grown in the rapid horizontal growth technique. All of the detailed characterization for DKDP figured out that the 70% deuterated KDP crystal grown in this way had relatively good qualities.

Nanoparticle-mediated nonclassical crystal growth of sodium fluorosilicate nanowires and nanoplates

Directory of Open Access Journals (Sweden)

Hongxia Li

2011-12-01

Full Text Available We observed nonclassical crystal growth of the sodium fluorosilicate nanowires, nanoplates, and hierarchical structures through self-assembly and aggregation of primary intermediate nanoparticles. Unlike traditional ion-by-ion crystallization, the primary nanoparticles formed first and their subsequent self-assembly, fusion, and crystallization generated various final crystals. These findings offer direct evidences for the aggregation-based crystallization mechanism.

Growth of sodium chlorate crystals in the presence of potassium sulphate

Science.gov (United States)

Kim, E. L.; Tsyganova, A. A.; Vorontsov, D. A.; Ovsetsina, T. I.; Katkova, M. R.; Lykov, V. A.; Portnov, V. N.

2015-09-01

In this work, we investigated the morphology and growth rates of NaClO3 crystals in solutions with K2SO4 additives. NaClO3 crystals were grown using the temperature gradient technique under concentration convection. We found that the crystal habitus changed from cubic to tetrahedral, and the growth of the cubic {100}, tetrahedral {111} and rhomb-dodecahedral {110} faces decelerated with an increase in the concentration of SO42- ions. The {110} face was the most and the {100} face was the least inhibited by sulphate ions. The mechanism of SO42- ions action is their adsorption on the crystal surface, which impedes attachment of the crystal's building units. We conclude that different atomic structure and charge state of various crystal faces determine their sensitivity to the action of the SO42- ions.

Protein crystal growth on board Shenzhou 3: a concerted effort improves crystal diffraction quality and facilitates structure determination

International Nuclear Information System (INIS)

Han, Y.; Cang, H.-X.; Zhou, J.-X.; Wang, Y.-P.; Bi, R.-C.; Colelesage, J.; Delbaere, L.T.J.; Nahoum, V.; Shi, R.; Zhou, M.; Zhu, D.-W.; Lin, S.-X.

2004-01-01

The crystallization of 16 proteins was carried out using 60 wells on board Shenzhou 3 in 2002. Although the mission was only 7 days, careful and concerted planning at all stages made it possible to obtain crystals of improved quality compared to their ground controls for some of the proteins. Significantly improved resolutions were obtained from diffracted crystals of 4 proteins. A complete data set from a space crystal of the PEP carboxykinase yielded significantly higher resolution (1.46 A vs. 1.87 A), I/sigma (22.4 vs. 15.5), and a lower average temperature factor (29.2 A 2 vs. 42.9 A 2 ) than the best ground-based control crystal. The 3-D structure of the enzyme is well improved with significant ligand density. It has been postulated that the reduced convection and absence of macromolecule sedimentation under microgravity have advantages/benefits for protein crystal growth. Improvements in experimental design for protein crystal growth in microgravity are ongoing

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Science.gov (United States)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-12-01

Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

Energy Technology Data Exchange (ETDEWEB)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

2005-02-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

International Nuclear Information System (INIS)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

2005-01-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

Institute of Scientific and Technical Information of China (English)

Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

2007-01-01

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

L-alanine distribution in the growth pyramids of TGS crystals and its influence on the growth, switching and domain structure

International Nuclear Information System (INIS)

Brezina, B.; Havrankova, M.

1985-01-01

The full-faced crystals of triglycine sulphate (TGS) and deuterated homologs substituted by L-alanine (LATGS and LADTGS, resp.) were grown from growth solutions with various concentrations of the substituent. The distribution of L, alanine (L,al) in various growth pyramids of crystals was measured by the electrical switching method. The stability of domain structure of doped crystals was studied by the liquid crystal method. (author)

Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

Science.gov (United States)

Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

2017-09-01

Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

International Nuclear Information System (INIS)

Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

2006-01-01

The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

Numerical simulations of crystal growth in a transdermal drug delivery system

Science.gov (United States)

Zeng, Jianming; Jacob, Karl I.; Tikare, Veena

2004-02-01

Grain growth by precipitation and Ostwald ripening in an unstressed matrix of a dissolved crystallizable component was simulated using a kinetic Monte Carlo model. This model was used previously to study Ostwald ripening in the high crystallizable component regime and was shown to correctly simulate solution, diffusion and precipitation. In this study, the same model with modifications was applied to the low crystallizable regime of interest to the transdermal drug delivery system (TDS) community. We demonstrate the model's utility by simulating precipitation and grain growth during isothermal storage at different supersaturation conditions. The simulation results provide a first approximation for the crystallization occurring in TDS. It has been reported that for relatively higher temperature growth of drug crystals in TDS occurs only in the middle third of the polymer layer. The results from the simulations support these findings that crystal growth is limited to the middle third of the region, where the availability of crystallizable components is the highest, for cluster growth at relatively high temperature.

Antiphase inversion domains in lithium cobaltite thin films deposited on single-crystal sapphire substrates

International Nuclear Information System (INIS)

Zheng, S.J.; Fisher, C.A.J.; Hitosugi, T.; Kumatani, A.; Shiraki, S.; Ikuhara, Y.H.; Kuwabara, A.; Moriwake, H.; Oki, H.; Ikuhara, Y.

2013-01-01

Antiphase inversion domains in LiCoO 2 thin films prepared by pulsed laser deposition on sapphire single-crystal substrates are analyzed using a combination of (scanning) transmission electron microscopy and first-principles calculations. Domains form epitaxially on the substrates with orientation relationships of [112 ¯ 0] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 and [1 ¯ 1 ¯ 20] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 . In addition, substrate/film interfaces with the above orientation relationships always have the same stacking sequence of Al–O–Co–O–Li–O. This is confirmed to be the most energetically stable stacking arrangement according to first-principles calculations. Individual domains form as a result of steps one (0 0 0 1) O–Al–O spacing in height on the otherwise flat substrate surface. Because the orientation of adjacent (0 0 0 1) AlO 6 octahedra in Al 2 O 3 are rotated by 180°, while LiO 6 and CoO 6 octahedra in LiCoO 2 are all aligned in the same direction, substrate steps produce LiCoO 2 domains rotated 180° relative to their neighbors. The similar size of oxygen octahedra in the two materials also means that the step height is close to the layer spacing in LiCoO 2 , so that (0 0 0 1) Li and Co layers of adjacent domains are shifted by one layer relative to each other at each domain boundary, aligning Li layers with Co layers across the boundary. The combination of these two effects generates antiphase inversion domains. The domain boundaries effectively sever Li-ion diffusion pathways in the (0 0 0 1) planes between domains and thus are expected to have a detrimental effect on Li-ion conductivity

Growth of mercuric iodide single crystals from dimethylsulfoxide

International Nuclear Information System (INIS)

Carlston, R.C.

1976-01-01

Dimethylsulfoxide is used as a solvent for the growth of red mercuric iodide (HgI 2 ) crystals for use in radiation detectors. The hygroscopic property of the solvent allows controlled amounts of water to enter into the solvent phase and diminish the large solubility of HgI 2 so that the precipitating solid collects as well-defined euhedral crystals which grow into a volume of several cc

Interfacial reactions between sapphire and Ag–Cu–Ti-based active braze alloys

International Nuclear Information System (INIS)

Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

2016-01-01

The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and sapphire have been studied. In separate experiments, Ag–35.3Cu–1.8Ti wt.% and Ag–26.7Cu–4.5Ti wt.% alloys have been sandwiched between pieces of R-plane orientated sapphire and heated in argon to temperatures between 750 and 900 °C for 1 min. The phases at the Ag–Cu–Ti/sapphire interfaces have been studied using selected area electron diffraction, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Gradual and subtle changes at the Ag–Cu–Ti/sapphire interfaces were observed as a function of temperature, along with the formation of a transient phase that permitted wetting of the sapphire. Unequivocal evidence is shown that when the active braze alloys melt, titanium first migrates to the sapphire and reacts to dissolve up to ∼33 at.% oxygen, forming a nanometre-size polycrystalline layer with a chemical composition of Ti 2 O 1–x (x ≪ 1). Ti 3 Cu 3 O particles subsequently nucleate behind the Ti 2 O 1–x layer and grow to become a continuous micrometre-size layer, replacing the Ti 2 O 1–x layer. Finally at 845 °C, a nanometre-size γ-TiO layer forms on the sapphire to leave a typical interfacial structure of Ag–Cu/Ti 3 Cu 3 O/γ-TiO/sapphire consistent with that seen in samples of polycrystalline alumina joined to itself with these active braze alloys. These experimental observations have been used to establish a definitive bonding mechanism for the joining of sapphire with Ag–Cu alloys activated by small amounts of titanium.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

Energy Technology Data Exchange (ETDEWEB)

Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

2015-12-15

Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Small-Angle Neutron Scattering Investigation of Growth Modifiers on Hydrate Crystal Surfaces

Science.gov (United States)

Sun, Thomas; Hutter, Jeffrey L.; Lin, M.; King, H. E., Jr.

1998-03-01

Hydrates are crystals consisting of small molecules enclathrated within an ice-like water cage. Suppression of their growth is important in the oil industry. The presence of small quantities of specific polymers during hydrate crystallization can induce a transition from an octahedral to planar growth habit. This symmetry breaking is surprising because of the suppression of two 111 planes relative to the other six crystallographically equivalent faces. To better understand the surface effects leading to this behavior, we have studied the surface adsorption of these growth-modifing polymers onto the hydrate crytals using SANS. The total hydrate surface area, as measured by Porod scattering, increases in the presence of the growth modifier, but, no significant increase in polymer concentration on the crystal surfaces is found. Implications for possible growth mechanisms will be discussed.

Microscopic Rate Constants of Crystal Growth from Molecular Dynamic Simulations Combined with Metadynamics

Directory of Open Access Journals (Sweden)

Dániel Kozma

2012-01-01

Full Text Available Atomistic simulation of crystal growth can be decomposed into two steps: the determination of the microscopic rate constants and a mesoscopic kinetic Monte Carlo simulation. We proposed a method to determine kinetic rate constants of crystal growth. We performed classical molecular dynamics on the equilibrium liquid/crystal interface of argon. Metadynamics was used to explore the free energy surface of crystal growth. A crystalline atom was selected at the interface, and it was displaced to the liquid phase by adding repulsive Gaussian potentials. The activation free energy of this process was calculated as the maximal potential energy density of the Gaussian potentials. We calculated the rate constants at different interfacial structures using the transition state theory. In order to mimic real crystallization, we applied a temperature difference in the calculations of the two opposite rate constants, and they were applied in kinetic Monte Carlo simulation. The novelty of our technique is that it can be used for slow crystallization processes, while the simple following of trajectories can be applied only for fast reactions. Our method is a possibility for determination of elementary rate constants of crystal growth that seems to be necessary for the long-time goal of computer-aided crystal design.

Ti:Sapphire waveguide lasers

NARCIS (Netherlands)

Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

2007-01-01

Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

Integrated Intelligent Modeling, Design and Control of Crystal Growth Processes

National Research Council Canada - National Science Library

Prasad, V

2000-01-01

.... This MURI program took an integrated approach towards modeling, design and control of crystal growth processes and in conjunction with growth and characterization experiments developed much better...

Reliability improvement methods for sapphire fiber temperature sensors

Science.gov (United States)

Schietinger, C.; Adams, B.

1991-08-01

Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

Crystal nucleation and dendrite growth of metastable phases in undercooled melts

International Nuclear Information System (INIS)

Herlach, Dieter

2011-01-01

Research highlights: → Homogenous nucleation. → Effects of convection on dendrite growth kinetics. → Description of disorder trapping validated by experiment. - Abstract: An undercooled melt possesses an enhanced free enthalpy that opens up the possibility to crystallize metastable crystalline solids in competition with their stable counterparts. Crystal nucleation selects the crystallographic phase whereas the growth dynamics controls microstructure evolution. We apply containerless processing techniques such as electromagnetic and electrostatic levitation to containerlesss undercool and solidify metallic melts. Owing to the complete avoidance of heterogeneous nucleation on container-walls a large undercooling range becomes accessible with the extra benefit that the freely suspended drop is direct accessible for in situ observation of crystallization far away from equilibrium. Results of investigations of maximum undercoolability on pure zirconium are presented showing the limit of maximum undercoolability set by the onset of homogeneous nucleation. Rapid dendrite growth is measured as a function of undercooling by a high-speed camera and analysed within extended theories of non-equilibrium solidification. In such both supersaturated solid solutions and disordered superlattice structure of intermetallics are formed at high growth velocities. A sharp interface theory of dendrite growth is capable to describe the non-equilibrium solidification phenomena during rapid crystallization of deeply undercooled melts. Eventually, anomalous growth behaviour of Al-rich Al-Ni alloys is presented, which may be caused by forced convection.

Advances in the Growth and Characterization of Relaxor-PT-Based Ferroelectric Single Crystals

Directory of Open Access Journals (Sweden)

Jun Luo

2014-07-01

Full Text Available Compared to Pb(Zr1−xTixO3 (PZT polycrystalline ceramics, relaxor-PT single crystals offer significantly improved performance with extremely high electromechanical coupling and piezoelectric coefficients, making them promising materials for piezoelectric transducers, sensors and actuators. The recent advances in crystal growth and characterization of relaxor-PT-based ferroelectric single crystals are reviewed in this paper with emphases on the following topics: (1 the large crystal growth of binary and ternary relaxor-PT-based ferroelectric crystals for commercialization; (2 the composition segregation in the crystals grown from such a solid-solution system and possible solutions to reduce it; (3 the crystal growth from new binary and ternary compositions to expand the operating temperature and electric field; (4 the crystallographic orientation dependence and anisotropic behaviors of relaxor-PT-based ferroelectriccrystals; and (5 the characterization of the dielectric, elastic and piezoelectric properties of the relaxor-PT-based ferroelectriccrystals under small and large electric fields.

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

Science.gov (United States)

Pisciotta, B. P.; Gross, C.

1976-01-01

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Stacking fault growth of FCC crystal: The Monte-Carlo simulation approach

International Nuclear Information System (INIS)

Jian Jianmin; Ming Naiben

1988-03-01

The Monte-Carlo method has been used to simulate the growth of the FCC (111) crystal surface, on which is presented the outcrop of a stacking fault. The comparison of the growth rates has been made between the stacking fault containing surface and the perfect surface. The successive growth stages have been simulated. It is concluded that the outcrop of stacking fault on the crystal surface can act as a self-perpetuating step generating source. (author). 7 refs, 3 figs

Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals

International Nuclear Information System (INIS)

Li, Qiang; Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao

2015-01-01

In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al 2 O 3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al 2 O 3 crystal and form stable V Al -V Al ferromagnetic coupling at room temperature

Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

Science.gov (United States)

Plate, Matiss; Krauze, Armands; Virbulis, Jānis

2018-05-01

During the growth of large diameter silicon single crystals with the industrial floating zone method, undesirable level of thermal stress in the crystal is easily reached due to the inhomogeneous expansion as the crystal cools down. Shapes of the phase boundaries, temperature field and elastic material properties determine the thermal stress distribution in the solid mono crystalline silicon during cylindrical growth. Excessive stress can lead to fracture, generation of dislocations and altered distribution of intrinsic point defects. Although appearance of ridges on the crystal surface is the decisive factor of a dislocation-free growth, the influence of these ridges on the stress field is not completely clear. Here we present the results of thermal stress analysis for 4” and 5” diameter crystals using a quasi-stationary three dimensional mathematical model including the material anisotropy and the presence of experimentally observed ridges which cannot be addressed with axis-symmetric models. The ridge has a local but relatively strong influence on thermal stress therefore its relation to the origin of fracture is hypothesized. In addition, thermal stresses at the crystal rim are found to increase for a particular position of the crystal radiation reflector.

A Low-Cost System Based on Image Analysis for Monitoring the Crystal Growth Process.

Science.gov (United States)

Venâncio, Fabrício; Rosário, Francisca F do; Cajaiba, João

2017-05-31

Many techniques are used to monitor one or more of the phenomena involved in the crystallization process. One of the challenges in crystal growth monitoring is finding techniques that allow direct interpretation of the data. The present study used a low-cost system, composed of a commercial webcam and a simple white LED (Light Emitting Diode) illuminator, to follow the calcium carbonate crystal growth process. The experiments were followed with focused beam reflectance measurement (FBRM), a common technique for obtaining information about the formation and growth of crystals. The images obtained in real time were treated with the red, blue, and green (RGB) system. The results showed a qualitative response of the system to crystal formation and growth processes, as there was an observed decrease in the signal as the growth process occurred. Control of the crystal growth was managed by increasing the viscosity of the test solution with the addition of monoethylene glycol (MEG) at 30% and 70% in a mass to mass relationship, providing different profiles of the RGB average curves. The decrease in the average RGB value became slower as the concentration of MEG was increased; this reflected a lag in the growth process that was proven by the FBRM.

Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

International Nuclear Information System (INIS)

Sang Ling; Liu Jian-Ming; Xu Xiao-Qing; Wang Jun; Zhao Gui-Juan; Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; Wei Hong-Yuan; Liu Xiang-Lin; Yang Shao-Yan; Zhu Qin-Sheng; Wang Zhan-Guo

2012-01-01

The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on r-sapphire is studied. The influences of V/III ratio and growth temperature on surface morphology are investigated. V-pits and stripes are observed on the surface of a-GaN grown at 1050°C and 1100°C, respectively. The overall orientation and geometry of V-pits are uniform and independent on the V/III molar ratio in the samples grown at 1050°C, while in the samples grown at 1100°C, the areas of stripes decrease with the adding of V/III ratio. We deduce the origin of V-pits and stripes by annealing the buffer layers at different temperatures. Because of the existence of inclined (101-bar1) facets, V-pits are formed at 1050°C. The (101-bar1) plane is an N terminated surface, which is metastable at higher temperature, so stripes instead of V-pits are observed at 1100°C. Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films. Hence, to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire. (condensed matter: structure, mechanical and thermal properties)

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of strontium oxalate crystals in agar–agar gel

Indian Academy of Sciences (India)

Growth of strontium oxalate crystals in agar–agar gel. P V DALAL. ∗ and K B SARAF. Postgraduate Department of Physics, Pratap College, Amalner 425 401, India. MS received 16 March 2008; revised 5 April 2010. Abstract. Single crystals of strontium oxalate have been grown by using strontium chloride and oxalic acid in.

Screening and Crystallization Plates for Manual and High-throughput Protein Crystal Growth

Science.gov (United States)

Thorne, Robert E. (Inventor); Berejnov, Viatcheslav (Inventor); Kalinin, Yevgeniy (Inventor)

2010-01-01

In one embodiment, a crystallization and screening plate comprises a plurality of cells open at a top and a bottom, a frame that defines the cells in the plate, and at least two films. The first film seals a top of the plate and the second film seals a bottom of the plate. At least one of the films is patterned to strongly pin the contact lines of drops dispensed onto it, fixing their position and shape. The present invention also includes methods and other devices for manual and high-throughput protein crystal growth.

Crystallization and Growth of Colloidal Nanocrystals

CERN Document Server

Leite, Edson Roberto

2012-01-01

Since the size, shape, and microstructure of nanocrystalline materials strongly impact physical and chemical properties, the development of new synthetic routes to  nanocrystals with controlled composition and morphology is a key objective of the nanomaterials community. This objective is dependent on control of the nucleation and growth mechanisms that occur during the synthetic process, which in turn requires a fundamental understanding of both classical nucleation and growth and non-classical growth processes in nanostructured materials.  Recently, a novel growth process called Oriented Attachment (OA) was identified which appears to be a fundamental mechanism during the development of nanoscale  materials. OA is a special case of aggregation that provides an important route by which nanocrystals grow, defects are formed, and unique—often symmetry-defying—crystal morphologies can be produced. This growth mechanism involves reversible self-assembly of primary nanocrystals followed by reorientati...

Growth, spectral and thermal studies of ibuprofen crystals

Energy Technology Data Exchange (ETDEWEB)

Ramukutty, S.; Ramachandran, E. [Department of Physics, Thiruvalluvar College, Papanasam (India)

2012-01-15

RS -Ibuprofen was crystallized for the first time in silica gel under suitable pH conditions by reduction of solubility method. The grown crystals were characterized by single crystal X-ray diffraction and density measurement. The functional groups present in the crystal were identified using Fourier transform infrared spectroscopy. Optical bandgap energy of ibuprofen was estimated as 3.19(3) eV from UV-Vis spectrum. Thermogravimetric analysis revealed that ibuprofen is thermally stable upto 102.9 C and the initial loss of mass was due to evaporation only. Morphological study showed that the growth is prominent along b-axis and the prominent face is {l_brace}100{r_brace}. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Impact of Heterogeneity and Lattice Bond Strength on DNA Triangle Crystal Growth.

Science.gov (United States)

Stahl, Evi; Praetorius, Florian; de Oliveira Mann, Carina C; Hopfner, Karl-Peter; Dietz, Hendrik

2016-09-07

One key goal of DNA nanotechnology is the bottom-up construction of macroscopic crystalline materials. Beyond applications in fields such as photonics or plasmonics, DNA-based crystal matrices could possibly facilitate the diffraction-based structural analysis of guest molecules. Seeman and co-workers reported in 2009 the first designed crystal matrices based on a 38 kDa DNA triangle that was composed of seven chains. The crystal lattice was stabilized, unprecedentedly, by Watson-Crick base pairing. However, 3D crystallization of larger designed DNA objects that include more chains such as DNA origami remains an unsolved problem. Larger objects would offer more degrees of freedom and design options with respect to tailoring lattice geometry and for positioning other objects within a crystal lattice. The greater rigidity of multilayer DNA origami could also positively influence the diffractive properties of crystals composed of such particles. Here, we rationally explore the role of heterogeneity and Watson-Crick interaction strengths in crystal growth using 40 variants of the original DNA triangle as model multichain objects. Crystal growth of the triangle was remarkably robust despite massive chemical, geometrical, and thermodynamical sample heterogeneity that we introduced, but the crystal growth sensitively depended on the sequences of base pairs next to the Watson-Crick sticky ends of the triangle. Our results point to weak lattice interactions and high concentrations as decisive factors for achieving productive crystallization, while sample heterogeneity and impurities played a minor role.

On the growth of calcium tartrate tetrahydrate single crystals

Indian Academy of Sciences (India)

Unknown

Abstract. Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium for- mate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation den- sity was reduced and the size of the crystals was improved to a large extent compared to the conventional way.

Investigation of grain competitive growth during directional solidification of single-crystal nickel-based superalloys

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xinbao [National Energy R and D Center of Clean and High-Efficiency Fossil-Fired Power Generation Technology, Xi' an Thermal Power Research Institute Co. Ltd., Xi' an (China); Northwestern Polytechnical University, State Key Laboratory of Solidification Processing, Xi' an (China); Liu, Lin; Zhang, Jun [Northwestern Polytechnical University, State Key Laboratory of Solidification Processing, Xi' an (China)

2015-08-15

Grain competitive growth of nickel-based single-crystal superalloys during directional solidification was investigated. A detailed characterization of bi-crystals' competitive growth was performed to explore the competitive grain evolution. It was found that high withdrawal rate improved the efficiency of grain competitive growth. The overgrowth rate was increased when the misorientation increased. Four patterns of grain competitive growth with differently oriented dispositions were characterized. The results indicated that the positive branching of the dendrites played a significant role in the competitive growth process. The effect of crystal orientation and heat flow on the competitive growth can be attributed to the blocking mechanism between the adjacent grains. (orig.)

Hanging drop crystal growth apparatus

Science.gov (United States)

Naumann, Robert J. (Inventor); Witherow, William K. (Inventor); Carter, Daniel C. (Inventor); Bugg, Charles E. (Inventor); Suddath, Fred L. (Inventor)

1990-01-01

This invention relates generally to control systems for controlling crystal growth, and more particularly to such a system which uses a beam of light refracted by the fluid in which crystals are growing to detect concentration of solutes in the liquid. In a hanging drop apparatus, a laser beam is directed onto drop which refracts the laser light into primary and secondary bows, respectively, which in turn fall upon linear diode detector arrays. As concentration of solutes in drop increases due to solvent removal, these bows move farther apart on the arrays, with the relative separation being detected by arrays and used by a computer to adjust solvent vapor transport from the drop. A forward scattering detector is used to detect crystal nucleation in drop, and a humidity detector is used, in one embodiment, to detect relative humidity in the enclosure wherein drop is suspended. The novelty of this invention lies in utilizing angular variance of light refracted from drop to infer, by a computer algorithm, concentration of solutes therein. Additional novelty is believed to lie in using a forward scattering detector to detect nucleating crystallites in drop.

Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

Science.gov (United States)

Zhao, Wenhan; Liu, Lijun

2017-01-01

The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

Nonlinearity Mechanism and Correction of Sapphire Fiber Temperature Sensor on Blackbody Cavity

Directory of Open Access Journals (Sweden)

Tiejun Cao

2014-06-01

Full Text Available Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stability of the sensor. In order to solve the nonlinear problems which exist in the measurement, at first, the sapphire fiber optic temperature sensor temperature measurement principle and nonlinear generation mechanism are studied; secondly piecewise linear interpolation and spline interpolation linearization algorithm is designed with combining the nonlinear characteristics of sapphire optical fiber temperature sensor, and the program is designed on its linear and associated signal processing. Experimental results show that a good linearization of sapphire fiber optic temperature sensor can been achieved in this method.

'Sapphire' project. Objectives and outcomes

International Nuclear Information System (INIS)

Shkolnik, V.S.

1997-01-01

'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

Synthesis and growth of single crystals of PrCl3

International Nuclear Information System (INIS)

Pei, Jen Shieh.

1984-01-01

An efficient method for growth of high optical quality single crystals of PrCl 3 . The method consists in careful drying of the hydrated chloride, PrCl 3 . 7H 2 O, with a protective atmosphere of anhydrous HCl and Ar. A subsequent growth was done by the zone melting technique. The hydrated chloride had prepared from dissolution of the oxide Pr 6 O 11 in hydrochloric acid. The grown crystals had characterized fluorescence and x-ray diffraction measurements. (Author) [pt

Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

International Nuclear Information System (INIS)

Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

2014-01-01

Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

Growth of single crystals from solutions using semi-permeable membranes

Science.gov (United States)

Varkey, A. J.; Okeke, C. E.

1983-05-01

A technique suitable for growth of single crystals from solutions using semi-preamble membranes is described. Using this technique single crystals of copper sulphate, potassium bromide and ammonium dihydrogen phosphate have been successfully grown. Advantages of this technique over other methods are discussed.

Crystal growth within a phase change memory cell.

Science.gov (United States)

Sebastian, Abu; Le Gallo, Manuel; Krebs, Daniel

2014-07-07

In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.

Growth of NH4Cl Single Crystal from Vapor Phase in Vertical Furnace

Science.gov (United States)

Nigara, Yutaka; Yoshizawa, Masahito; Fujimura, Tadao

1983-02-01

A pure and internally stress-free single crystal of NH4Cl was grown successfully from the vapor phase. The crystal measured 1.6 cmφ× 2 cm and had the disordered CsCl structure, which was stable below 184°C. The crystal was grown in an ampoule in a vertical furnace, in which the vapor was efficiently transported both by diffusion and convection. In line with the growth mechanism of a single crystal, the temperature fluctuation (°C/min) on the growth interface was kept smaller than the product of the temperature gradient (°C/cm) and the growth rate (cm/min). The specific heat of the crystal was measured around -31°C (242 K) during cooling and heating cycles by AC calorimetry. The thermal hysteresis (0.4 K) obtained here was smaller than that (0.89 K) of an NH4Cl crystal grown from its aqueous solution with urea added as a habit modifier.

Historical review of quartz crystal growth

Science.gov (United States)

Iwasaki, Fumiko; Iwasaki, Hideo

2002-04-01

The history of quartz crystal growth is reviewed from the origin to the industrialization. The developing process of growth techniques is divided into the following three stages: (1) The fundamental work based on the mineralogical genetic view point, which was performed in Italy during the end of the 19th to the beginning of the 20th centuries. (2) The works to attempt the industrial application made in Germany and in England during World War II. (3) The industrialization of quartz growth after World War II. These were initiated in England, in USA and independently in Russia. The highest mass production process was developed in Japan. The historical flow is traced by the interview of several persons based on the original references.

Optimizing Ti:Sapphire laser for quantitative biomedical imaging

Science.gov (United States)

James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

2018-02-01

Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

Investigating calcite growth rates using a quartz crystal microbalance with dissipation (QCM-D)

Science.gov (United States)

Cao, Bo; Stack, Andrew G.; Steefel, Carl I.; DePaolo, Donald J.; Lammers, Laura N.; Hu, Yandi

2018-02-01

Calcite precipitation plays a significant role in processes such as geological carbon sequestration and toxic metal sequestration and, yet, the rates and mechanisms of calcite growth under close to equilibrium conditions are far from well understood. In this study, a quartz crystal microbalance with dissipation (QCM-D) was used for the first time to measure macroscopic calcite growth rates. Calcite seed crystals were first nucleated and grown on sensors, then growth rates of calcite seed crystals were measured in real-time under close to equilibrium conditions (saturation index, SI = log ({Ca2+}/{CO32-}/Ksp) = 0.01-0.7, where {i} represent ion activities and Ksp = 10-8.48 is the calcite thermodynamic solubility constant). At the end of the experiments, total masses of calcite crystals on sensors measured by QCM-D and inductively coupled plasma mass spectrometry (ICP-MS) were consistent, validating the QCM-D measurements. Calcite growth rates measured by QCM-D were compared with reported macroscopic growth rates measured with auto-titration, ICP-MS, and microbalance. Calcite growth rates measured by QCM-D were also compared with microscopic growth rates measured by atomic force microscopy (AFM) and with rates predicted by two process-based crystal growth models. The discrepancies in growth rates among AFM measurements and model predictions appear to mainly arise from differences in step densities, and the step velocities were consistent among the AFM measurements as well as with both model predictions. Using the predicted steady-state step velocity and the measured step densities, both models predict well the growth rates measured using QCM-D and AFM. This study provides valuable insights into the effects of reactive site densities on calcite growth rate, which may help design future growth models to predict transient-state step densities.

Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

Science.gov (United States)

Amano, Hiroshi

2015-12-01

This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

Oxidation states of Fe and Ti in blue sapphire

International Nuclear Information System (INIS)

Wongrawang, P; Wongkokua, W; Monarumit, N; Thammajak, N; Wathanakul, P

2016-01-01

X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe 2+ and Ti 4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe 3+ state; and Ti at 4984 eV, corresponding to Ti 4+ . From these results, we propose Fe 3+ -Ti 4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV–vis absorption spectra, to describe the cause of the color of blue sapphire. (paper)

Nucleation and growth of the Naica giant gypsum crystals.

Science.gov (United States)

Otálora, Fermín; García-Ruiz, JuanMa

2014-04-07

The Cave of Giant Crystals in the Naica mine (Mexico) is one of the most amazing displays of mineral beauty ever created in nature. In addition to the colossal crystals of gypsum, which in some cases exceed eleven meters in length and one meter in thickness, the scenery fashioned by the crystalline beams that thrust through the darkness of the cave from floor to ceiling with a luster like moonlight is a unique example of harmony based on crystal symmetry. We review the crystallogenesis of this remarkable and challenging phenomenon of mineralization near equilibrium that can be used to teach the basics of nucleation and crystal growth.

The inhibition of crystal growth of mirabilite in aqueous solutions in the presence of phosphonates

Science.gov (United States)

Vavouraki, A. I.; Koutsoukos, P. G.

2016-02-01

The formation of sodium sulfate decahydrate (Mirabilite) has been known to cause serious damages to structural materials both of modern and of historical buildings. Methods which can retard or completely suppress the development of mirabilte crystals are urgently needed especially as remedies or preventive measures for the preservation of the built cultural heritage. In the present work we present results on the effect of the presence of phosphonate compounds on the kinetics of crystal growth from aqueous supersaturated solutions at 18 °C using the seeded growth technique. The phosphonate compounds tested differed with respect to the number of ionizable phosphonate groups and with respect to the number of amino groups in the respective molecules. The crystal growth process was monitored by the temperature changes during the exothermic crystallization of mirabilite in the stirred supersaturated solutions. The crystal growth of mirabilite in the presence of: (1-hydroxyethylidene)-1, 1-diphosphonic acid (HEDP), amino tri (methylene phosphonic acid) (ATMP), hexamethylenediaminetetra (methylene)phosphonic acid (HTDMP), and diethylene triamine penta(methylene phosphonic acid)(DETPMP) over a range of concentrations between 0.1-5% w/w resulted in significant decrease of the rates of mirabilite crystal growth. All phosphonic compounds tested reduced the crystallization rates up to 60% in comparison with additive-free solutions. The presence of the test compounds did not cause changes of the mechanism of crystal growth which was surface diffusion controlled, as shown by the second order dependence of the rates of mirabilite crystal growth on the relative supersaturation. The excellent fit of the measured rates to a kinetic Langmuir-type model suggested that the activity of the tested inhibitors could be attributed to the adsorption and subsequent reduction of the active crystal growth sites of the seed crystals. In all cases, the inhibitory activity was reduced with

Crystal Growth of New Radiation Detector Materials in Microgravity, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — RMD proposes to conduct a series of crystal growth experiments on the International Space Station in the SUBSA furnace inside the MSG glovebox to grow crystals of...

Crystal growth of Li{sup 10}B{sub 3}O{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Sugiyama, Akira [Kansai Research Establishment, Japan Atomic Energy Research Institute, Kizu, Kyoto (Japan); Gallagher, Hugh G.; Han, Thomas P.J.

1999-09-01

The growth of boron 10 isotope enriched L{sup 10}BO (Li{sup 10}B{sub 3}O{sub 5}) optical crystal has been developed from Top-Seeded-Solution-Growth using a resistance furnace. In the preparation for growth materials, we have made further improvement on a charge loading technique to a crucible and succeeded in forming suitable high temperature flux for producing crystals. Adequate temperature gradient of 1K/cm inside the crucible was achieved from searching for a combination of setting temperatures in the vertical three-zone furnace and installing a ceramic ring under the crucible. We have also optimized seed holder configuration and established growth conditions by several attempts. As a result, two good quality L{sup 10}BO crystals were produced with sizes of 14 x 25 x 22 mm and 13 x 10 x 12 mm from <001> oriented seed crystals. Although these sizes were limited by the size of the crucible used, appropriate oriented samples were extracted for detailed studies in optical measurements. (author)

Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures

International Nuclear Information System (INIS)

Redondo-Cubero, A.; Vinnichenko, M.; Muecklich, A.; Kolitsch, A.; Krause, M.; Munoz, E.; Gago, R.

2011-01-01

The effect of the substrate temperature on the sublattice ordering in ZnO layers grown by reactive pulsed magnetron sputtering on sapphire has been investigated by different techniques. The improvement of the crystal quality and heteroepitaxial growth at relatively low temperatures (550 deg. C) is verified by x-ray diffraction, high-resolution transmission electron microscopy, Rutherford backscattering spectrometry in channeling mode (RBS/C), and Raman spectroscopy. Sublattice-resolved analysis by resonant RBS/C and Raman spectroscopy reveals that the progressive transition to the single crystal phase is accomplished in a faster way for Zn- than for O-sublattice. This behavior is attributed to the preferential annealing of defects in the Zn sublattice at low temperatures when compared to those of the O sublattice.

Modelisation and numerical simulation for bulk crystal growth processes

International Nuclear Information System (INIS)

Duffar, F.; Dusserre, P.; Barat, C.; Nabot, J.P.

1993-01-01

The aim of this work is to study the relevance of numerical simulation for improving the process control in the field of crystal growth. This investigation focused on the growth of semiconductor and halide crystals by the Bridgman solidification technique, the principle of which is to cool a seeded feed material contained in a crucible, either by pulling the crucible or by decreasing the temperature in the furnace. Calculations are performed with the finite element method, and for comparison, experiments are carried out on Bridgman pulling machines operating either in a laboratory or in industrial plants. Calculations and experimental data have shown a good agreement and a satisfactory reliability

Defect reduction in seeded aluminum nitride crystal growth

Science.gov (United States)

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

2017-09-26

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Lee, Fang-Wei [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

2016-07-01

Highlights: • Nanoscale patterned sapphire substrate was prepared by anodic-aluminum-oxide etching mask. • Influence of aspect ratio of NPSS on structural and electrical properties of GaN films was studied. • Low dislocation density and high carrier mobility of GaN films were grown on high aspect ratio NPSS. - Abstract: This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 10{sup 8} cm{sup −2} for GaN on bare sapphire to 4.9 × 10{sup 8} cm{sup −2} for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm{sup 2}/Vs for GaN on bare sapphire to 199 cm{sup 2}/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with

Development of high quality large laser crystals for a CPA laser system

International Nuclear Information System (INIS)

Sugiyama, Akira; Fukuyama, Hiroyasu; Nagai, Shiro; Katsurayama, Masamichi; Anzai, Yutaka

2000-01-01

Uniform doped concentration along growth direction of Nd 3+ :YAG crystal with 110 mm length was successfully grown by the Czochralski furnace with a double crucible. The fluctuation of doped concentration was less than 4%, nearly 1/4 of the Nd 3+ :YAG crystal grown by a conventional method. We also demonstrated direct bonding without the use of adhesive materials on Ti:sapphire laser crystals with a bonding surface dimension of 12 mm x 6 mm. The bonding surfaces were treated with chemical processes to clean up and to create a hydrophilic layer for hydrogen bonding in an atmospheric furnace. Successive heat treatment in a vacuum furnace transformed the hydrogen bonding into the direct bonding. From the observation by a transmission electron microscope (Hitachi: HF-2000), atomic level bonding was succeeded in the bonding surface. The performance of the bonded crystal was also tested by laser oscillation with a second harmonics of Q-switched Nd 3+ :YAG at a 20 Hz repetition rate. In comparison with a normal laser crystal, there were no difference in output power or spatial profile in an input condition of 30 mJ. The optical damaged threshold on the bonding surface was estimated over 660 MW/cm 2 . (author)

Electronic structure analysis of GaN films grown on r- and a-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2015-10-05

Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

The growth and characterization of well aligned RuO2 nanorods on sapphire substrates

International Nuclear Information System (INIS)

Chen, C C; Chen, R S; Tsai, T Y; Huang, Y S; Tsai, D S; Tiong, K K

2004-01-01

Self-assembled and well aligned RuO 2 nanorods (NRs) have been grown on sapphire (SA) substrates via metal-organic chemical vapour deposition (MOCVD), using bis(ethylcyclopentadienyl)ruthenium as the source reagent. The surface morphology, structural, and spectroscopic properties of the as-deposited NRs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAD), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned nanorods (NRs) were grown on SA(100), while the NRs on the SA(012) were grown with a tilt angle of ∼ 35 degrees from the normal to the substrates. TEM and SAD measurements showed that the RuO 2 NRs with square cross-section have the long axis directed along the [001] direction. The XRD results indicate that the RuO 2 NRs are (002) oriented on SA(100) and (101) oriented on SA(012) substrates. A strong substrate effect on the alignment of the RuO 2 NRs growth has been demonstrated and the probable mechanism for the formation of these NRs has been discussed. XP spectra show the coexistence of higher oxidation state of ruthenium in the as-grown RuO 2 NRs. Micro-Raman spectra show the red-shift and peak broadening of the RuO 2 signatures with respect to that of the bulk counterpart which may be indicative of a phonon confinement effect for these NRs

Protein nanocrystallography: growth mechanism and atomic structure of crystals induced by nanotemplates.

Science.gov (United States)

Pechkova, E; Vasile, F; Spera, R; Fiordoro, S; Nicolini, C

2005-11-01

Protein nanocrystallography, a new technology for crystal growth based on protein nanotemplates, has recently been shown to produce diffracting, stable and radiation-resistant lysozyme crystals. This article, by computing these lysozyme crystals' atomic structures, obtained by the diffraction patterns of microfocused synchrotron radiation, provides a possible mechanism for this increased stability, namely a significant decrease in water content accompanied by a minor but significant alpha-helix increase. These data are shown to be compatible with the circular dichroism and two-dimensional Fourier transform spectra of high-resolution H NMR of proteins dissolved from the same nanotemplate-based crystal versus those from a classical crystal. Finally, evidence for protein direct transfer from the nanotemplate to the drop and the participation of the template proteins in crystal nucleation and growth is provided by high-resolution NMR spectrometry and mass spectrometry. Furthermore, the lysozyme nanotemplate appears stable up to 523 K, as confirmed by a thermal denaturation study using spectropolarimetry. The overall data suggest that heat-proof lysozyme presence in the crystal provides a possible explanation of the crystal's resistance to synchrotron radiation.

Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field.

Science.gov (United States)

Kotsuki, Kenji; Obata, Seiji; Saiki, Koichiro

2016-01-19

We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.

Crystal growth of calcium carbonate in silk fibroin/sodium alginate hydrogel

Science.gov (United States)

Ming, Jinfa; Zuo, Baoqi

2014-01-01

As known, silk fibroin-like protein plays a pivotal role during the formation of calcium carbonate (CaCO3) crystals in the nacre sheets. Here, we have prepared silk fibroin/sodium alginate nanofiber hydrogels to serve as templates for calcium carbonate mineralization. In this experiment, we report an interesting finding of calcium carbonate crystal growth in the silk fibroin/sodium alginate nanofiber hydrogels by the vapor diffusion method. The experimental results indicate calcium carbonate crystals obtained from nanofiber hydrogels with different proportions of silk fibroin/sodium alginate are mixture of calcite and vaterite with unusual morphologies. Time-dependent growth study was carried out to investigate the crystallization process. It is believed that nanofiber hydrogels play an important role in the process of crystallization. This study would help in understanding the function of organic polymers in natural mineralization, and provide a novel pathway in the design and synthesis of new materials related unique morphology and structure.

Rapid growth of ZnO hexagonal prism crystals by direct microwave heating

Institute of Scientific and Technical Information of China (English)

ZHU Zhenqi; ZHOU Jian; LIU Guizhen; REN Zhiguo

2008-01-01

ZnO hexagonal prism crystals were synthesized from ZnO powders by microwave heating in a short time (within 20 min) without any metal catalyst or transport agent.Zinc oxide raw materials were made by evaporating from the high-temperature zone in an enclosure atmosphere and crystals were grown on the self-source substrate.The inherent asymmetry in microwave heating provides the temperature gradient for crystal growth.Substrate and temperature distribution in the oven show significant effects on the growth of the ZnO crystal.The morphologies demonstrate that these samples are pure hexagonal prism crystals with maximum 80 μm in diameter and 600 μm in length,which possess a well faceted end and side surface.X-ray diffraction (XRD) reveals that these samples are pure crystals.The photoluminescence (PL) exhibits strong ultraviolet emission at room temperature,indicating potential applications for short-wave light-emitting photonic devices.

Nanoscale abnormal grain growth in (001) epitaxial ceria

International Nuclear Information System (INIS)

Solovyov, Vyacheslav F.; Develos-Bagarinao, Katherine; Nykypanchuk, Dmytro

2009-01-01

X-ray reciprocal-space mapping and atomic force microscopy (AFM) are used to study kinetics and mechanisms of lateral grain growth in epitaxial (001) ceria (CeO 2 ) deposited by pulsed laser deposition on (001) yttria-stabilized zirconia (YSZ) and (12 lowbar 10) (r-cut) sapphire. Rate and character of the grain growth during postannealing at 1050 deg. C are found to be strongly dependent on the type of the epitaxial substrate. Films deposited on YSZ exhibit signatures of normal grain growth, which stagnated after the lateral grain size reaches 40 nm, consistent with the grain-boundary pinning by the thermal grooving. In contrast, when r-cut sapphire substrate was used, abnormal (secondary) grain growth is observed. A small population of grains grow to well over 100 nm consuming smaller, 100 nm large (001) terminations and rendering the sample single-crystalline quality. The grain growth is accompanied by reduction in lateral rms strain, resulting in a universal grain size--rms strain dependence. Analysis of the AFM and x-ray diffraction data leads to the conclusion that bimodal initial grain population consisting of grains with very different sizes is responsible for initiation of the abnormal growth in (001) CeO 2 films on r-cut sapphire. Due to different surface chemistry, when a YSZ substrate is used, the initial grain distribution is monomodal, therefore only normal growth is active. We demonstrate that a 2.2 deg. miscut of the sapphire substrate eliminates the large-grain population, thus suppressing abnormal grain growth. It is concluded that utilization of abnormal grain growth is a promising way for synthesis of large (001) ceria terminations.

Lattice Boltzmann Simulation of Water Isotope Fractionation During Growth of Ice Crystals in Clouds

Science.gov (United States)

Lu, G.; Depaolo, D.; Kang, Q.; Zhang, D.

2006-12-01

The isotopic composition of precipitation, especially that of snow, plays a special role in the global hydrological cycle and in reconstruction of past climates using polar ice cores. The fractionation of the major water isotope species (HHO, HDO, HHO-18) during ice crystal formation is critical to understanding the global distribution of isotopes in precipitation. Ice crystal growth in clouds is traditionally treated with a spherically- symmetric steady state diffusion model, with semi-empirical modifications added to account for ventilation and for complex crystal morphology. Although it is known that crystal growth rate, which depends largely on the degree of vapor over-saturation, determines crystal morphology, there are no existing quantitative models that directly relate morphology to the vapor saturation factor. Since kinetic (vapor phase diffusion-controlled) isotopic fractionation also depends on growth rate, there should be a direct relationship between vapor saturation, crystal morphology, and crystal isotopic composition. We use a 2D Lattice-Boltzmann model to simulate diffusion-controlled ice crystal growth from vapor- oversaturated air. In the model, crystals grow solely according to the diffusive fluxes just above the crystal surfaces, and hence crystal morphology arises from the initial and boundary conditions in the model and does not need to be specified a priori. The input parameters needed are the isotope-dependent vapor deposition rate constant (k) and the water vapor diffusivity in air (D). The values of both k and D can be computed from kinetic theory, and there are also experimentally determined values of D. The deduced values of k are uncertain to the extent that the sticking coefficient (or accommodation coefficient) for ice is uncertain. The ratio D/k is a length that determines the minimum scale of dendritic growth features and allows us to scale the numerical calculations to atmospheric conditions using a dimensionless Damkohler number

Iron inhibits hydroxyapatite crystal growth in vitro.

Science.gov (United States)

Guggenbuhl, Pascal; Filmon, Robert; Mabilleau, Guillaume; Baslé, Michel F; Chappard, Daniel

2008-07-01

Hemochromatosis is a known cause of osteoporosis in which the pathophysiology of bone loss is largely unknown and the role of iron remains questionable. We have investigated the effects of iron on the growth of hydroxyapatite crystals in vitro on carboxymethylated poly(2-hydroxyethyl methacrylate) pellets. This noncellular and enzyme-independent model mimics the calcification of woven bone (composed of calcospherites made of hydroxyapatite crystals). Polymer pellets were incubated with body fluid containing iron at increasing concentrations (20, 40, 60 micromol/L). Hydroxyapatite growth was studied by chemical analysis, scanning electron microscopy, and Raman microscopy. When incubated in body fluid containing iron, significant differences were observed with control pellets. Iron was detected at a concentration of 5.41- to 7.16-fold that of controls. In pellets incubated with iron, there was a approximately 3- to 4-fold decrease of Ca and P and a approximately 1.3- to 1.4-fold increase in the Ca/P ratio. There was no significant difference among the iron groups of pellets, but a trend to a decrease of Ca with the increase of iron concentration was noted. Calcospherite diameters were significantly lower on pellets incubated with iron. Raman microspectroscopy showed a decrease in crystallinity (measured by the full width of the half height of the 960 Deltacm(-1) band) with a significant increase in carbonate substitution (measured by the intensity ratio of 1071 to 960 Deltacm(-1) band). Energy dispersive x-ray analysis identified iron in the calcospherites. In vitro, iron is capable to inhibit bone crystal growth with significant changes in crystallinity and carbonate substitution.

Crystallization Kinetics of Organic–Inorganic Trihalide Perovskites and the Role of the Lead Anion in Crystal Growth

KAUST Repository

Moore, David T.

2015-02-18

© 2015 American Chemical Society. Methylammonium lead halide perovskite solar cells continue to excite the research community due to their rapidly increasing performance which, in large part, is due to improvements in film morphology. The next step in this progression is control of the crystal morphology which requires a better fundamental understanding of the crystal growth. In this study we use in situ X-ray scattering data to study isothermal transformations of perovskite films derived from chloride, iodide, nitrate, and acetate lead salts. Using established models we determine the activation energy for crystallization and find that it changes as a function of the lead salt. Further analysis enabled determination of the precursor composition and showed that the primary step in perovskite formation is removal of excess organic salt from the precursor. This understanding suggests that careful choice of the lead salt will aid in controlling crystal growth, leading to superior films and better performing solar cells.

Imaging transport phenomena during lysozyme protein crystal growth by the hanging drop technique

Science.gov (United States)

Sethia Gupta, Anamika; Gupta, Rajive; Panigrahi, P. K.; Muralidhar, K.

2013-06-01

The present study reports the transport process that occurs during the growth of lysozyme protein crystals by the hanging drop technique. A rainbow schlieren technique has been employed for imaging changes in salt concentration. A one dimensional color filter is used to record the deflection of the light beam. An optical microscope and an X-ray crystallography unit are used to characterize the size, tetragonal shape and Bravais lattice constants of the grown crystals. A parametric study on the effect of drop composition, drop size, reservoir height and number of drops on the crystal size and quality is reported. Changes in refractive index are not large enough to create a meaningful schlieren image in the air gap between the drop and the reservoir. However, condensation of fresh water over the reservoir solution creates large changes in the concentration of NaCl, giving rise to clear color patterns in the schlieren images. These have been analyzed to obtain salt concentration profiles near the free surface of the reservoir solution as a function of time. The diffusion of fresh water into the reservoir solution at the early stages of crystal growth followed by the mass flux of salt from the bulk solution towards the free surface has been recorded. The overall crystal growth process can be classified into two regimes, as demarcated by the changes in slope of salt concentration within the reservoir. The salt concentration in the reservoir equilibrates at long times when the crystallization process is complete. Thus, transport processes in the reservoir emerge as the route to monitor protein crystal growth in the hanging drop configuration. Results show that crystal growth rate is faster for a higher lysozyme concentration, smaller drops, and larger reservoir heights.

Study on growth techniques and macro defects of large-size Nd:YAG laser crystal

Science.gov (United States)

Quan, Jiliang; Yang, Xin; Yang, Mingming; Ma, Decai; Huang, Jinqiang; Zhu, Yunzhong; Wang, Biao

2018-02-01

Large-size neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystals were grown by the Czochralski method. The extinction ratio and wavefront distortion of the crystal were tested to determine the optical homogeneity. Moreover, under different growth conditions, the macro defects of inclusion, striations, and cracking in the as-grown Nd:YAG crystals were analyzed. Specifically, the inclusion defects were characterized using scanning electron microscopy and energy dispersive spectroscopy. The stresses of growth striations and cracking were studied via a parallel plane polariscope. These results demonstrate that improper growth parameters and temperature fields can enhance defects significantly. Thus, by adjusting the growth parameters and optimizing the thermal environment, high-optical-quality Nd:YAG crystals with a diameter of 80 mm and a total length of 400 mm have been obtained successfully.

Crystal growth and characterization of calcium metaborate scintillators

Science.gov (United States)

Fujimoto, Y.; Yanagida, T.; Kawaguchi, N.; Fukuda, K.; Totsuka, D.; Watanabe, K.; Yamazaki, A.; Chani, V.; Nikl, M.; Yoshikawa, A.

2013-03-01

Calcium metaborate CaB2O4 single crystals were grown by the Czochralski (CZ) method with the radio-frequency (RF) heating system. In these crystals, a plane cleavage was observed along the growth direction. The crystals had an 80% transparency, and no absorption bands were detected in the 190-900 nm wavelength range. The 241Am 5.5 MeV α-ray-excited radioluminescence spectrum of CaB2O4 demonstrated a broad intrinsic luminescence peak at 300-400 nm, which originated from the lattice defects or an exciton-based emission. According to the pulse height spectrum, when irradiated by neutrons from a 252Cf source, the scintillation light yielded approximately 3200 photons per neutron (ph/n).

Growth of AlN films and their characterization

Energy Technology Data Exchange (ETDEWEB)

Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

2006-06-15

Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Potassium terbium fluoride crystal growth development for faraday rotator discs fabrication, 6 July 1978--6 February 1979

Energy Technology Data Exchange (ETDEWEB)

1979-05-17

Crystal growth experiments were performed and growth of KTb/sub 3/F/sub 10/ crystals were accomplished. The crystal growth experiments consisted of hot zone modification and development of growth parameters. Several boules of KTb/sub 3/F/sub 10/ 30 to 40mm in diameter and one boule 50mm in diameter were grown at rates varying from .5mm/hr to 3.0mm/hr. The crystals evaluated display excellent optical quality. The optical path distortion was less than 0.5 fringe/cm at 633nm as viewed in Twyman--Green interferometry. Growth of large crystals has been limited by mechanical cleavage.

Mathematical modeling and numerical simulation of Czochralski Crystal Growth

Energy Technology Data Exchange (ETDEWEB)

Jaervinen, J.; Nieminen, R. [Center for Scientific Computing, Espoo (Finland)

1996-12-31

A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

Mathematical modeling and numerical simulation of Czochralski Crystal Growth

Energy Technology Data Exchange (ETDEWEB)

Jaervinen, J; Nieminen, R [Center for Scientific Computing, Espoo (Finland)

1997-12-31

A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

Strategies for the coupling of global and local crystal growth models

Science.gov (United States)

Derby, Jeffrey J.; Lun, Lisa; Yeckel, Andrew

2007-05-01

The modular coupling of existing numerical codes to model crystal growth processes will provide for maximum effectiveness, capability, and flexibility. However, significant challenges are posed to make these coupled models mathematically self-consistent and algorithmically robust. This paper presents sample results from a coupling of the CrysVUn code, used here to compute furnace-scale heat transfer, and Cats2D, used to calculate melt fluid dynamics and phase-change phenomena, to form a global model for a Bridgman crystal growth system. However, the strategy used to implement the CrysVUn-Cats2D coupling is unreliable and inefficient. The implementation of under-relaxation within a block Gauss-Seidel iteration is shown to be ineffective for improving the coupling performance in a model one-dimensional problem representative of a melt crystal growth model. Ideas to overcome current convergence limitations using approximations to a full Newton iteration method are discussed.

Validation of mathematical model for CZ process using small-scale laboratory crystal growth furnace

Science.gov (United States)

Bergfelds, Kristaps; Sabanskis, Andrejs; Virbulis, Janis

2018-05-01

The present material is focused on the modelling of small-scale laboratory NaCl-RbCl crystal growth furnace. First steps towards fully transient simulations are taken in the form of stationary simulations that deal with the optimization of material properties to match the model to experimental conditions. For this purpose, simulation software primarily used for the modelling of industrial-scale silicon crystal growth process was successfully applied. Finally, transient simulations of the crystal growth are presented, giving a sufficient agreement to experimental results.

New Crystal-Growth Methods for Producing Lattice-Matched Substrates for High-Temperature Superconductors

Energy Technology Data Exchange (ETDEWEB)

Boatner, L.A.

2008-06-24

This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.

Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

2009-07-01

Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

TEM studies of the crystal growth of indanthrone pigments

International Nuclear Information System (INIS)

McHendry, P.

1998-01-01

The aim of this work was to study the crystal growth of indanthrone during the pigmentation process. The colouring properties of a pigment are dependant on the chemical and crystallographic structure of the pigment. However, other factors are known to affect these properties including particle size, particle size distribution and level of dispersion in the chosen application medium. The parameters which affect the growth of the pigment particles were investigated with the emphasis placed on the mechanism by which growth took place. The final form of the crystals after growth was also investigated in some detail. Various electron microscopy techniques were employed in the investigations in this thesis. High and low magnification imaging and diffraction were studied on the CTEM (conventional transmission electron microscope) whilst PEELS (parallel electron energy loss spectroscopy) and DPC (differential phase contrast) studies took place on the VG HB5 STEM (scanning transmission electron microscope). In addition to these studies, x-ray diffraction and surface area analysis techniques were employed. The low magnification CTEM work gave good information on the size, shape and size distribution of the pigment particles and enabled detailed analysis of the level of growth attained under varied reaction conditions. (author)

Site location and optical properties of Eu implanted sapphire

International Nuclear Information System (INIS)

Marques, C.; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Silva, R.C. da; Alves, E.

2005-01-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 x 10 16 cm -2 . Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 deg. C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 deg. C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements

Crystal growth of new charge-transfer salts based on π-conjugated donor molecules

Energy Technology Data Exchange (ETDEWEB)

Morherr, Antonia, E-mail: morherr@stud.uni-frankfurt.de [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Witt, Sebastian [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Chernenkaya, Alisa [Graduate School Materials Science in Mainz, 55128 Mainz (Germany); Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz (Germany); Bäcker, Jan-Peter [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Schönhense, Gerd [Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz (Germany); Bolte, Michael [Institut für anorganische Chemie, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Krellner, Cornelius [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany)

2016-09-01

New charge transfer crystals of π-conjugated, aromatic molecules (phenanthrene and picene) as donors were obtained by physical vapor transport. The melting behavior, optimization of crystal growth and the crystal structure are reported for charge transfer salts with (fluorinated) tetracyanoquinodimethane (TCNQ-F{sub x}, x=0, 2, 4), which was used as acceptor material. The crystal structures were determined by single-crystal X-ray diffraction. Growth conditions for different vapor pressures in closed ampules were applied and the effect of these starting conditions for crystal size and quality is reported. The process of charge transfer was investigated by geometrical analysis of the crystal structure and by infrared spectroscopy on single crystals. With these three different acceptor strengths and the two sets of donor materials, it is possible to investigate the distribution of the charge transfer systematically. This helps to understand the charge transfer process in this class of materials with π-conjugated donor molecules.

A Proposed Model for Protein Crystal Nucleation and Growth

Science.gov (United States)

Pusey, Marc; Curreri, Peter A. (Technical Monitor)

2002-01-01

How does one take a molecule, strongly asymmetric in both shape and charge distribution, and assemble it into a crystal? We propose a model for the nucleation and crystal growth process for tetragonal lysozyme, based upon fluorescence, light, neutron, and X-ray scattering data, size exclusion chromatography experiments, dialysis kinetics, AFM, and modeling of growth rate data, from this and other laboratories. The first species formed is postulated to be a 'head to side' dimer. Through repeating associations involving the same intermolecular interactions this grows to a 4(sub 3) helix structure, that in turn serves as the basic unit for nucleation and subsequent crystal growth. High salt attenuates surface charges while promoting hydrophobic interactions. Symmetry facilitates subsequent helix-helix self-association. Assembly stability is enhanced when a four helix structure is obtained, with each bound to two neighbors. Only two unique interactions are required. The first are those for helix formation, where the dominant interaction is the intermolecular bridging anion. The second is the anti-parallel side-by-side helix-helix interaction, guided by alternating pairs of symmetry related salt bridges along each side. At this stage all eight unique positions of the P4(sub3)2(sub 1),2(sub 1) unit cell are filled. The process is one of a) attenuating the most strongly interacting groups, such that b) the molecules begin to self-associate in defined patterns, so that c) symmetry is obtained, which d) propagates as a growing crystal. Simple and conceptually obvious in hindsight, this tells much about what we are empirically doing when we crystallize macromolecules. By adjusting the growth parameters we are empirically balancing the intermolecular interactions, preferentially attenuating the dominant strong (for lysozyme the charged groups) while strengthening the lesser strong (hydrophobic) interactions. In the general case for proteins the lack of a singularly defined

Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

International Nuclear Information System (INIS)

Zeng, Yong; Zhao, Yan; Jiang, Yijian

2015-01-01

Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

Control of crystal growth in water purification by directional freeze crystallization

Science.gov (United States)

Conlon, William M. (Inventor)

1996-01-01

A Directional Freeze Crystallization system employs an indirect contact heat exchanger to freeze a fraction of liquid to be purified. The unfrozen fraction is drained away and the purified frozen fraction is melted. The heat exchanger must be designed in accordance with a Growth Habit Index to achieve efficient separation of contaminants. If gases are dissolved in the liquid, the system must be pressurized.

Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices

Science.gov (United States)

Williams, Adrian Daniel

Gallium nitride (GaN) is a direct wide band gap semiconductor currently under heavy development worldwide due to interest in its applications in ultra-violet optoelectronics, power electronics, devices operating in harsh environments (high temperature or corrorsive), etc. While a number of devices have been demonstrated with this material and its related alloys, the unavailability of GaN substrates is seen as one of the current major bottlenecks to both material quality and device performance. This dissertation is concerned with the synthesis of high quality GaN substrates by the hydride vapor phase epitaxy method (HVPE). In this work, the flow of growth precursors in a home-built HVPE reactor was modeled by the Navier-Stokes equation and solved by finite element analysis to promote uniformity of GaN on 2'' sapphire substrates. Kinetics of growth was studied and various regimes of growth were identified to establish a methodology for HVPE GaN growth, independent of reactor geometry. GaN templates as well as bulk substrates were fabricated in this work. Realization of freestanding GaN substrates was achieved through discovery of a natural stress-induced method of separating bulk GaN from sapphire via mechanical failure of a low-temperature GaN buffer layer. Such a process eliminates the need for pre- or post-processing of sapphire substrates, as is currently the standard. Stress in GaN-on-sapphire is discussed, with the dominant contributor identified as thermal stress due to thermal expansion coefficient mismatch between the two materials. This thermal stress is analyzed using Stoney's equation and conditions for crack-free growth of thick GaN substrates were identified. An etch-back process for planarizing GaN templates was also developed and successfully applied to rough GaN templates. The planarization of GaN has been mainly addressed by chemo-mechanical polishing (CMP) methods in the literature, with notable shortcomings including the inability to effectively

High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

Science.gov (United States)

Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

1996-01-01

In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

Protein Crystal Growth

Science.gov (United States)

2003-01-01

In order to rapidly and efficiently grow crystals, tools were needed to automatically identify and analyze the growing process of protein crystals. To meet this need, Diversified Scientific, Inc. (DSI), with the support of a Small Business Innovation Research (SBIR) contract from NASA s Marshall Space Flight Center, developed CrystalScore(trademark), the first automated image acquisition, analysis, and archiving system designed specifically for the macromolecular crystal growing community. It offers automated hardware control, image and data archiving, image processing, a searchable database, and surface plotting of experimental data. CrystalScore is currently being used by numerous pharmaceutical companies and academic and nonprofit research centers. DSI, located in Birmingham, Alabama, was awarded the patent Method for acquiring, storing, and analyzing crystal images on March 4, 2003. Another DSI product made possible by Marshall SBIR funding is VaporPro(trademark), a unique, comprehensive system that allows for the automated control of vapor diffusion for crystallization experiments.

Analysis of Study Trend of Growth and Characterization of CdZnTe Single Crystal

International Nuclear Information System (INIS)

Lee, Kyu Hong; Ha, Jang Ho; Kim, Han Soo

2011-05-01

CdZnTe (CZT) alloys are very important semiconducting compounds due to their use in several strategic applications in medical, space, and security devices, especially, radiation detector. Specific problems of the bulk crystal growth are still to be solved. However, since industries require excellent bulk CZT crystals, a strong effort is being organized worldwide to optimize the growth process and obtain better material. This report presents the study trend of the bulk CZT crystal growth and characteristics. After the first section where the problems connected to the complicated phase diagram of CZT are presented, the second section describes the various general physical and chemical properties, together with the compensation problems of the CZT material. In the third section, various growth methods are described, paying attention to the defects generated in the different cases. Further, the annealing process which is an essential step for improving the crystal quality is described. In the last section, the general material characterization methods are presented, as a scientific approach for assessing the quality of the bulk crystal

Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

Energy Technology Data Exchange (ETDEWEB)

Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-01

InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

Hp Ge: Purification, crystal growth, and annealing properties

International Nuclear Information System (INIS)

Hall, R.N.

1984-01-01

The prospects for growing HP Ge crystals of increased size and purity are examined. One interesting approach is to grow dislocation-free crystals, which must then be annealed to reduce the concentration of V 2 H traps. The phenomena which occur during annealing are discussed and compared with experiment. Hydrogen, present in atomic form at the growth temperature, forms H 2 molecules during cooling, causing the effective diffusion coefficient to decrease rapidly. Models representing the reactions between H and the V 2 H, A(H, Si), and D(H,O) complexes are presented and analyzed

EFFECT OF SODIUM DODECYLBENZENESULFONIC ACID (SDBS ON THE GROWTH RATE AND MORPHOLOGY OF BORAX CRYSTAL

Directory of Open Access Journals (Sweden)

Suharso Suharso

2010-06-01

Full Text Available An investigation of the effect of sodium dodecylbenzenesulfonic acid (SDBS on both growth rate and morphology of borax crystal has been carried out.  This experiment was carried out at temperature of 25 °C and relative supersaturation of 0.21 and 0.74 under in situ cell optical microscopy method.  The result shows that SDBS inhibits the growth rate and changes the morphology of borax crystal.   Keywords: Borax; growth rate; crystallization, SDBS

Crystal plasticity modeling of irradiation growth in Zircaloy-2

Science.gov (United States)

Patra, Anirban; Tomé, Carlos N.; Golubov, Stanislav I.

2017-08-01

A physically based reaction-diffusion model is implemented in the visco-plastic self-consistent (VPSC) crystal plasticity framework to simulate irradiation growth in hcp Zr and its alloys. The reaction-diffusion model accounts for the defects produced by the cascade of displaced atoms, their diffusion to lattice sinks and the contribution to crystallographic strain at the level of single crystals. The VPSC framework accounts for intergranular interactions and irradiation creep, and calculates the strain in the polycrystalline ensemble. A novel scheme is proposed to model the simultaneous evolution of both, number density and radius, of irradiation-induced dislocation loops directly from experimental data of dislocation density evolution during irradiation. This framework is used to predict the irradiation growth behaviour of cold-worked Zircaloy-2 and trends compared to available experimental data. The role of internal stresses in inducing irradiation creep is discussed. Effects of grain size, texture and external stress on the coupled irradiation growth and creep behaviour are also studied and compared with available experimental data.

Thermal healing of the sub-surface damage layer in sapphire

International Nuclear Information System (INIS)

Pinkas, Malki; Lotem, Haim; Golan, Yuval; Einav, Yeheskel; Golan, Roxana; Chakotay, Elad; Haim, Avivit; Sinai, Ela; Vaknin, Moshe; Hershkovitz, Yasmin; Horowitz, Atara

2010-01-01

The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

Rise and fall of ferromagnetism in O-irradiated Al{sub 2}O{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Li, Qiang [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China); China Spallation Neutron Source, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan 523803 (China); Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao, E-mail: bjye@ustc.edu.cn [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China)

2015-06-21

In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al{sub 2}O{sub 3} single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al{sub 2}O{sub 3} crystal and form stable V{sub Al}-V{sub Al} ferromagnetic coupling at room temperature.

Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

Energy Technology Data Exchange (ETDEWEB)

Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; and others

1998-03-01

A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

Science.gov (United States)

Chung, Jeyon; Hyon, Jinho; Park, Kyung-Sun; Cho, Boram; Baek, Jangmi; Kim, Jueun; Lee, Sang Uck; Sung, Myung Mo; Kang, Youngjong

2016-03-01

Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8-133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

Science.gov (United States)

Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

1997-01-01

Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

Growth of rare-earth doped single crystal yttrium aluminum garnet fibers

Science.gov (United States)

Bera, Subhabrata; Nie, Craig D.; Harrington, James A.; Cheng, Long; Rand, Stephen C.; Li, Yuan; Johnson, Eric G.

2018-02-01

Rare-earth doped single crystal (SC) yttrium aluminum garnet (YAG) fibers have great potential as high-power laser gain media. SC fibers combine the superior material properties of crystals with the advantages of a fiber geometry. Improving processing techniques, growth of low-loss YAG SC fibers have been reported. A low-cost technique that allows for the growth of optical quality Ho:YAG single crystal (SC) fibers with different dopant concentrations have been developed and discussed. This technique is a low-cost sol-gel based method which offers greater flexibility in terms of dopant concentration. Self-segregation of Nd ions in YAG SC fibers have been observed. Such a phenomenon can be utilized to fabricate monolithic SC fibers with graded index.

Growth of cadmium oxide whiskers on cadmium sulphide single crystals with copper as growth activator

Energy Technology Data Exchange (ETDEWEB)

Koparanova, N.; Simov, S. (Bylgarska Akademiya na Naukite, Sofia. Inst. po Fizika na Tvyrdoto Tyalo); Genchev, D. (Bylgarska Akademiya na Naukite, Sofia. Inst. za Yadrena Izsledvaniya i Yadrena Energetika); Metchenov, G. (Research Inst. of Criminalistics and Criminology, Sofia (Bulgaria))

1985-02-01

Some results on the growth and morphology of cadmium oxide whiskers, obtained on cadmium sulphide single crystals with copper as a growth activator, are presented in this work. Cadmium oxide whiskers have been obtained on brace 112-bar0 brace faces of cadmium sulphide plates with a copper layer deposited in advance. The whiskers grew during the annealing of the plates in a weak stream of technically pure argon at temperatures 670 to 730 deg C for 15 min to 3.5 h. Details about the procedure have been given elsewhere. The composition and morphology of the whiskers have been studied by an X-ray microanalyser JEOL 35 DDS and a scanning electron microscope JEOL, JSM 35. The optical microscopic observations have shown that after annealing, a gray-black granular layer is formed on the cadmium sulphide single crystals and this layer can easily be separated from the crystal substrate. Under the granular layer the crystal is heavily damaged. The whiskers grow on the granular layer and they are coloured yellow-brown or red-brown. The maximum whisker length attains several hundreds of micrometres and in some cases up to 1 mm or more.

Growth of cadmium oxide whiskers on cadmium sulphide single crystals with copper as growth activator

International Nuclear Information System (INIS)

Koparanova, N.; Simov, S.

1985-01-01

Some results on the growth and morphology of cadmium oxide whiskers, obtained on cadmium sulphide single crystals with copper as a growth activator, are presented in this work. Cadmium oxide whiskers have been obtained on brace 112-bar0 brace faces of cadmium sulphide plates with a copper layer deposited in advance. The whiskers grew during the annealing of the plates in a weak stream of technically pure argon at temperatures 670 to 730 deg C for 15 min to 3.5 h. Details about the procedure have been given elsewhere. The composition and morphology of the whiskers have been studied by an X-ray microanalyser JEOL 35 DDS and a scanning electron microscope JEOL, JSM 35. The optical microscopic observations have shown that after annealing, a gray-black granular layer is formed on the cadmium sulphide single crystals and this layer can easily be separated from the crystal substrate. Under the granular layer the crystal is heavily damaged. The whiskers grow on the granular layer and they are coloured yellow-brown or red-brown. The maximum whisker length attains several hundreds of micrometres and in some cases up to 1 mm or more. (author)

Solubility and peculiarities of the yttrium-aluminium borate crystal growth

International Nuclear Information System (INIS)

Azizov, A.V.; Leonyuk, N.I.; Rezvyj, V.R.; Timchenko, T.I.; Belov, N.V.

1982-01-01

The nature of crystallization media and crystallization peculiarities of IAl 3 [BO 3 ] 4 yttrium-alluminium borate (YAB) were investigated. The investigation of YAB solubility was conducted in the melts of two different compositions: 88.1K 2 Mo 2 O 10 -3.5V 2 O 3 -8.4B 2 O 3 (1) and 89.5K 2 Mo 3 O 10 - - 10.5B 2 O 3 (2) at 1060-900 deg C. The YAB crystals obtained from different crystallization media had different habit and morphology. The revealed peculiarities are significant for the choice of the YAB crystal growing conditions on orientated seedings: more rapid growth can be exercised along the [0001] face from the solution in the melt (2)

Cross-section of single-crystal materials used as thermal neutron filters

International Nuclear Information System (INIS)

Adib, M.

2005-01-01

Transmission properties of several single crystal materials important for neutron scattering instrumentation are presented. A computer codes are developed which permit the calculation of thermal diffuse and Bragg-scattering cross-sections of silicon., and sapphire as a function of material's constants, temperature and neutron energy, E, in the range 0.1 MeV .A discussion of the use of their single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons is given

Sapphire-fiber-based distributed high-temperature sensing system.

Science.gov (United States)

Liu, Bo; Yu, Zhihao; Hill, Cary; Cheng, Yujie; Homa, Daniel; Pickrell, Gary; Wang, Anbo

2016-09-15

We present, for the first time to our knowledge, a sapphire-fiber-based distributed high-temperature sensing system based on a Raman distributed sensing technique. High peak power laser pulses at 532 nm were coupled into the sapphire fiber to generate the Raman signal. The returned Raman Stokes and anti-Stokes signals were measured in the time domain to determine the temperature distribution along the fiber. The sensor was demonstrated from room temperature up to 1200°C in which the average standard deviation is about 3.7°C and a spatial resolution of about 14 cm was achieved.

Mechanisms of heterogeneous crystal growth in atomic systems: insights from computer simulations.

Science.gov (United States)

Gulam Razul, M S; Hendry, J G; Kusalik, P G

2005-11-22

In this paper we analyze the atomic-level structure of solid/liquid interfaces of Lennard-Jones fcc systems. The 001, 011, and 111 faces are examined during steady-state growth and melting of these crystals. The mechanisms of crystallization and melting are explored using averaged configurations generated during these steady-state runs, where subsequent tagging and labeling of particles at the interface provide many insights into the detailed atomic behavior at the freezing and melting interfaces. The interfaces are generally found to be rough and we observe the structure of freezing and melting interfaces to be very similar. Large structural fluctuations with solidlike and liquidlike characteristics are apparent in both the freezing and melting interfaces. The behavior at the interface observed under either growth or melting conditions reflects a competition between ordering and disordering processes. In addition, we observe atom hopping that imparts liquidlike characteristics to the solid side of the interfaces for all three crystal faces. Solid order is observed to extend as rough, three-dimensional protuberances through the interface, particularly for the 001 and 011 faces. We are also able to reconcile our different measures for the interfacial width and address the onset of asymmetry in the growth rates at high rates of crystal growth/melting.

Iron single crystal growth from a lithium-rich melt

Science.gov (United States)

Fix, M.; Schumann, H.; Jantz, S. G.; Breitner, F. A.; Leineweber, A.; Jesche, A.

2018-03-01

α -Fe single crystals of rhombic dodecahedral habit were grown from a Li84N12Fe∼3 melt. Crystals of several millimeter along a side form at temperatures around T ≈ 800 ° C. Upon further cooling the growth competes with the formation of Fe-doped Li3N. The b.c.c. structure and good sample quality of α -Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90 ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal any sign of iron nitride precipitates.

Growth of GaN single crystals by a Ca- and Ba-added Na flux method

Science.gov (United States)

Ukegawa, H.; Konishi, Y.; Fujimori, T.; Miyoshi, N.; Imade, M.; Yoshimura, M.; Kitaoka, Y.; Sasaki, T.; Mori, Y.

2011-02-01

GaN substrates are desirable for fabricating ultra-violet LEDs and LDs, and high-power and high-frequency transistors. High-quality GaN single crystals can be obtained by using Na flux method, but the growth habit of bulk crystals must be controlled. In this study, we investigated the effects of additives (Ca, Ba) on the growth habit and impurity concentration in the crystals. The aspect ratio (c/a) of the crystals was increased by increasing the amount of additives, showing that the growth habit could be changed from the pyramidal shape to the prism shape. Ba concentration was below the detection limit (1x1015 atoms/cm3).

Epitactical FeAl films on sapphire and their magnetic properties

International Nuclear Information System (INIS)

Trautvetter, Moritz

2011-01-01

In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

Growth morphology of zinc tris(thiourea) sulphate crystals

Indian Academy of Sciences (India)

The growth morphology of crystals of zinc tris(thiourea) sulphate (ZTS) is investigated experimentally, and computed using the Hartman–Perdok approach. Attachment energies of the observed habit faces are calculated for determining their relative morphological importance. A computer code is developed for carrying out ...

Growth of high-temperature superconductor crystals from flux

International Nuclear Information System (INIS)

Demianets, L.N.; Bykov, A.B.; Melnikov, O.K.; Stishov, S.M.

1991-01-01

Crystallization of high-temperature superconductors was studied in La-Sr-Cu-O, Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O systems. Platelet crystals YBa 2 Cu 3 Osub(6.5+x) were obtained by spontaneous crystallization from homogeneous nonstoichiometric melts enriched in barium and copper oxides. Lasub(2-x)Sr x CuO 4 was prepared by slow cooling of melts enriched in copper oxide. Bi 2 (Sr, Ca)sub(n+1)Cu n O y , (n=1;2) was obtained by melting zone travelling. The crystals show transition to superconducting state at T=93K, ΔT 0.2-0.5 K (Y, Ba cuprate), T=87K, ΔT 2K (Bi, Sr, Ca-cuprate). La, Sr-cuprate single crystals obtained by Czochralski method did not show transition to superconducting state. For flux-grown crystals T c was 5-26 K depending on the composition, growth and heat treatment. The short characterization of some accessory phases (Ba 3 Y 2 Cu 3 PtO 10 , Casub(1.75)Srsub(1.5)Cusub(0.75)PtO 6 , BaCuO 2 , Ba 41 Cu 44 O 84 Cl 2 ) is reported. (author). 15 ref s., 8 figs

Determination of the rate of crystal growth from the gas phase under conditions of turbulent free convection

Science.gov (United States)

Alad'Ev, S. I.

1987-04-01

Crystal growth in vertical and horizontal cylindrical vials, with the substrate and the source serving as the vial ends, is investigated analytically, assuming that the medium consists of a binary mixture of an active and an inert gas. The active gas is made up of the gaseous products of reactions taking place at the substrate and at the source. It is shown that turbulent free convection leads to an increase in crystal growth rate. All other conditions being equal, crystal growth in vertical vials is greater than that in horizontal ones; in both cases crystal growth rate increases with the vial radius, temperature gradient in the gas phase, and gas phase density. The results are compared with experimental data on the growth of Ge crystals in the Ge-GeI4 system.

Growth and study of barium oxalate single crystals in agar gel

Indian Academy of Sciences (India)

Barium oxalate was grown in agar gel at ambient temperature. The effect of various parameters like gel concentration, gel setting time and concentration of the reactants on the growth of these crystals was studied. Prismatic platy shaped spherulites and dendrites were obtained. The grown crystals were characterized by ...

A study on the growth of compound semiconductor single crystal by TOM technique

International Nuclear Information System (INIS)

Kim, H.C.; Kwon, S.I.; Chung, M.K.; Chang, J.S.

1981-01-01

This paper describes the merit of the HgI 2 single crystals obtained by solution growth, 2- and 3-region temperature growth, and temperature oscillation growth for soft γ-ray detectors which can be operated at room temperature. Special efforts are put on the design, construction, and operation of the TOM (Temperature Oscillation Method) single crystal growing furnace. Experimental results show that HgI 2 detectors fabricated by vapour phase growth method usually exhibit sufficient enough detector characteristics for soft γ-ray spectrometry. However, further investigation should be carried out to eliminate detector deterioration due to polarization effect. (author)

Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

International Nuclear Information System (INIS)

Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

2006-01-01

The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

Defects in silicon effect on device performance and relationship to crystal growth conditions

Science.gov (United States)

Jastrzebski, L.

1985-01-01

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Hsu-Hung Hsueh

2016-01-01

Full Text Available The flat-top pyramid patterned sapphire substrates (FTP-PSSs have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μm, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002 plane for the GaN epilayers grown on conventional sapphire substrate (CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102 plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.

Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching

Science.gov (United States)

Wu, Chaoxing; Li, Fushan; Chen, Wei; Veeramalai, Chandrasekar Perumal; Ooi, Poh Choon; Guo, Tailiang

2015-03-01

The direct observation of single crystal graphene growth and its shape evolution is of fundamental importance to the understanding of graphene growth physicochemical mechanisms and the achievement of wafer-scale single crystalline graphene. Here we demonstrate the controlled formation of single crystal graphene with varying shapes, and directly observe the shape evolution of single crystal graphene by developing a localized-heating and rapid-quenching chemical vapor deposition (CVD) system based on electromagnetic induction heating. Importantly, rational control of circular, hexagonal, and dendritic single crystalline graphene domains can be readily obtained for the first time by changing the growth condition. Systematic studies suggest that the graphene nucleation only occurs during the initial stage, while the domain density is independent of the growth temperatures due to the surface-limiting effect. In addition, the direct observation of graphene domain shape evolution is employed for the identification of competing growth mechanisms including diffusion-limited, attachment-limited, and detachment-limited processes. Our study not only provides a novel method for morphology-controlled graphene synthesis, but also offers fundamental insights into the kinetics of single crystal graphene growth.

Development of a model for on-line control of crystal growth by the AHP method

Science.gov (United States)

Gonik, M. A.; Lomokhova, A. V.; Gonik, M. M.; Kuliev, A. T.; Smirnov, A. D.

2007-05-01

The possibility to apply a simplified 2D model for heat transfer calculations in crystal growth by the axial heat close to phase interface (AHP) method is discussed in this paper. A comparison with global heat transfer calculations with the CGSim software was performed to confirm the accuracy of this model. The simplified model was shown to provide adequate results for the shape of the melt-crystal interface and temperature field in an opaque (Ge) and a transparent crystal (CsI:Tl). The model proposed is used for identification of the growth setup as a control object, for synthesis of a digital controller (PID controller at the present stage) and, finally, in on-line simulations of crystal growth control.

Theoretical study of Cherenkov radiation emission in anisotropic uniaxial crystals

Energy Technology Data Exchange (ETDEWEB)

Delbart, A; Derre, J

1996-04-01

A theoretical review of the Cherenkov radiation emission in uniaxial crystals is presented. The formalism of C. Muzicar in terms of energetic properties of the emitted waves are corrected. This formalism is used to simulate the Cherenkov radiation emission in a strongly birefringent sodium nitrate crystal (NaNO{sub 3}) and to investigate the consequences of the slight anisotropy of sapphire (Al{sub 2}O{sub 3}) on the design of the Optical Trigger. (author). 12 refs. Submitted to Physical Review, D (US).

Growth and microtopographic study of CuInSe{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)

2016-05-23

The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

Science.gov (United States)

Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

1982-05-01

This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

Growth of large aluminum nitride single crystals with thermal-gradient control

Science.gov (United States)

Bondokov, Robert T; Rao, Shailaja P; Gibb, Shawn Robert; Schowalter, Leo J

2015-05-12

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Femtosecond laser micromachining of sapphire capillaries for laser-wakefield acceleration

Energy Technology Data Exchange (ETDEWEB)

Messner, Philipp; Delbos, Niels Matthias; Maier, Andreas R. [CFEL, Center for Free-Electron Laser Science, 22607 Hamburg (Germany); University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany); Calmano, Thomas [University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany)

2015-07-01

Laser-plasma accelerator are promising candidates to provide ultra-relativistic electron beams for compact light sources. One factor that limits the achievable electron beam energy in a laser plasma accelerator is the Rayleigh length of the driver laser, which dictates the length over which the electron beams can effectively be accelerated. To overcome this limitation lasers can be guided in a capillary waveguide to extend the acceleration length beyond the Rayleigh length. The production of waveguide structures on scales, that are suitable for plasma acceleration is very challenging. Here, we present experimental results from waveguide machining in sapphire crystals using a Clark MXR CPA 2010 laser with a wavelength of 775nm, 1KHZ repetition rate and a pulse duration of 160 fs. We discuss the effects of different parameters like energy, lens types, writing speed and polarisation on the size and shape of the capillaries, and compare the performance of different parameter sets.

Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

International Nuclear Information System (INIS)

Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

2016-01-01

Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

Crystal growth and scintillation properties of selected fluoride crystals for VUV scintillators

Czech Academy of Sciences Publication Activity Database

Pejchal, Jan; Fukuda, K.; Yamaji, A.; Yokota, Y.; Kurosawa, S.; Král, Robert; Nikl, Martin; Yoshikawa, A.

2014-01-01

Roč. 401, Sep (2014), s. 833-838 ISSN 0022-0248. [International Conference on Crystal Growth and Epitaxy /17./. Warsaw, 11.08.2013-16..08.2013] R&D Projects: GA MŠk LH12150 Institutional support: RVO:68378271 Keywords : vacuum-ultra-violet emission * micro-pulling-down method * barium -lutetium fluoride * erbium fluoride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.698, year: 2014

Microstructure evolution in carbon-ion implanted sapphire

International Nuclear Information System (INIS)

Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

2010-01-01

Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

Solution-mediated growth of NBA-ZSM-5 crystals retarded by gel entrapment

Science.gov (United States)

Aguilar-Mamani, Wilson; Akhtar, Farid; Hedlund, Jonas; Mouzon, Johanne

2018-04-01

The synthesis of flat tablet-shaped ZSM-5 crystals from a gel using metakaolin as aluminosilicate source and n-butyl amine as structure directing agent was investigated. The evolution inside the solid phase was characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, thermogravimetry and mass spectrometry. A kinetic study indicated that the nucleation of the majority crystals occurred concurrently with the formation of the gel upon heating the starting liquid suspension. Microstructural evidences undeniably showed that the gel precipitated on ZSM-5 crystals and mineral impurities originating from kaolin. As a result, crystal growth was retarded by gel entrapment, as indicated by the configuration and morphology of the embedded crystals. The results presented herein are harmonized with a solution-mediated nucleation and growth mechanism. Our observations differ from the autocatalytic model that suggests that the nuclei rest inside the gel until released when the gel is consumed. Our results show instead that it is crystals that formed in an early stage before entrapment inside the gel that rest inside the gel until exposed at the gel surface. These results illustrate the limitation of the classical method used in the field to determine nucleation profiles when the crystals become trapped inside the gel.

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

2015-06-15

This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

Science.gov (United States)

Amano, Hiroshi

2015-06-26

This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to late 80s. The background to the author's work and the process by which the technology that enables the growth of GaN and the realization of p-type GaN was established are reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth of crystalline semiconductor materials on crystal surfaces

CERN Document Server

Aleksandrov, L

2013-01-01

Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial i

Modeling Conformal Growth in Photonic Crystals and Comparing to Experiment

Science.gov (United States)

Brzezinski, Andrew; Chen, Ying-Chieh; Wiltzius, Pierre; Braun, Paul

2008-03-01

Conformal growth, e.g. atomic layer deposition (ALD), of materials such as silicon and TiO2 on three dimensional (3D) templates is important for making photonic crystals. However, reliable calculations of optical properties as a function of the conformal growth, such as the optical band structure, are hampered by difficultly in accurately assessing a deposited material's spatial distribution. A widely used approximation ignores ``pinch off'' of precursor gas and assumes complete template infilling. Another approximation results in non-uniform growth velocity by employing iso-intensity surfaces of the 3D interference pattern used to create the template. We have developed an accurate model of conformal growth in arbitrary 3D periodic structures, allowing for arbitrary surface orientation. Results are compared with the above approximations and with experimentally fabricated photonic crystals. We use an SU8 polymer template created by 4-beam interference lithography, onto which various amounts of TiO2 are grown by ALD. Characterization is performed by analysis of cross-sectional scanning electron micrographs and by solid angle resolved optical spectroscopy.

N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

Science.gov (United States)

Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

2018-01-01

The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

Broadband multiplex coherent anti-Stokes Raman scattering microscopy employing photonic-crystal fibers

DEFF Research Database (Denmark)

Andresen, Esben Ravn; Paulsen, Henrik Nørgaard; Birkedal, Victoria

2006-01-01

We demonstrate spectral multiplex coherent anti-Stokes Raman scattering (CARS) spectroscopy and microscopy based on a single Ti:sapphire oscillator and a nonlinear photonic-crystal fiber (PCF). The Stokes pulse is generated by spectral conversion of the laser pulse in a PCF. The pump pulse is eit...

Effect of coating thickness on interfacial shear behavior of zirconia-coated sapphire fibers in a polycrystalline alumina matrix

International Nuclear Information System (INIS)

Hellmann, J.R.; Chou, Y.S.

1995-01-01

The effect of zirconia (ZrO 2 ) interfacial coatings on the interfacial shear behavior in sapphire reinforced alumina was examined in this study. Zirconia coatings of thicknesses ranging from 0.15 to 1.45 μm were applied to single crystal sapphire (Saphikon) fibers using a particulate loaded sol dipping technique. After calcining at 1,100 C in air, the coated fibers were incorporated into a polycrystalline alumina matrix via hot pressing. Interfacial shear strength and sliding behavior of the coated fibers was examined using thin-slice indentation fiber pushout and pushback techniques. In all cases, debonding and sliding occurred at the interface between the fibers and the coating. The coatings exhibited a dense microstructure and led to a higher interfacial shear strength (> 240 MPa) and interfacial sliding stress (> 75 MPa) relative to previous studies on the effect of a porous interphase on interfacial properties. The interfacial shear strength decreased with increasing fiber coating thickness (from 389 ± 59 to 241 ± 43 MPa for 0.15 to 1.45 microm thick coatings, respectively). Sliding behavior exhibited load modulation with increasing displacement during fiber sliding which is characteristic of fiber roughness-induced stick-slip. The high interfacial shear strengths and sliding stresses measured in this study, as well as the potentially strength degrading surface reconstruction observed on the coated fibers after hot pressing and heat treatment, indicate that dense zirconia coatings are not suitable candidates for optimizing composite toughness and strength in the sapphire fiber reinforced alumina system

Introducing uncertainty analysis of nucleation and crystal growth models in Process Analytical Technology (PAT) system design of crystallization processes.

Science.gov (United States)

Samad, Noor Asma Fazli Abdul; Sin, Gürkan; Gernaey, Krist V; Gani, Rafiqul

2013-11-01

This paper presents the application of uncertainty and sensitivity analysis as part of a systematic model-based process monitoring and control (PAT) system design framework for crystallization processes. For the uncertainty analysis, the Monte Carlo procedure is used to propagate input uncertainty, while for sensitivity analysis, global methods including the standardized regression coefficients (SRC) and Morris screening are used to identify the most significant parameters. The potassium dihydrogen phosphate (KDP) crystallization process is used as a case study, both in open-loop and closed-loop operation. In the uncertainty analysis, the impact on the predicted output of uncertain parameters related to the nucleation and the crystal growth model has been investigated for both a one- and two-dimensional crystal size distribution (CSD). The open-loop results show that the input uncertainties lead to significant uncertainties on the CSD, with appearance of a secondary peak due to secondary nucleation for both cases. The sensitivity analysis indicated that the most important parameters affecting the CSDs are nucleation order and growth order constants. In the proposed PAT system design (closed-loop), the target CSD variability was successfully reduced compared to the open-loop case, also when considering uncertainty in nucleation and crystal growth model parameters. The latter forms a strong indication of the robustness of the proposed PAT system design in achieving the target CSD and encourages its transfer to full-scale implementation. Copyright © 2013 Elsevier B.V. All rights reserved.

Precipitation of thin-film organic single crystals by a novel crystal growth method using electrospray and ionic liquid film

Science.gov (United States)

Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko

2018-04-01

We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N‧-bis(3-methylphenyl)-N,N‧-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.

Crystal growth of emerald by flux method

International Nuclear Information System (INIS)

Inoue, Mikio; Narita, Eiichi; Okabe, Taijiro; Morishita, Toshihiko.

1979-01-01

Emerald crystals have been formed in two binary fluxes of Li 2 O-MoO 2 and Li 2 O-V 2 O 5 using the slow cooling method and the temperature gradient method under various conditions. In the flux of Li 2 O-MoO 3 carried out in the range of 2 -- 5 of molar ratios (MoO 3 /Li 2 O), emerald was crystallized in the temperature range from 750 to 950 0 C, and the suitable crystallization conditions were found to be the molar ratio of 3 -- 4 and the temperature about 900 0 C. In the flux of Li 2 O-V 2 O 5 carried out in the range of 1.7 -- 5 of molar ratios (V 2 O 5 /Li 2 O), emerald was crystallized in the temperature range from 900 to 1150 0 . The suitable crystals were obtained at the molar ratio of 3 and the temperature range of 1000 -- 1100 0 C. The crystallization temperature rised with an increase in the molar ratio of the both fluxes. The emeralds grown in two binary fluxes were transparent green, having the density of 2.68, the refractive index of 1.56, and the two distinct bands in the visible spectrum at 430 and 600nm. The emerald grown in Li 2 O-V 2 O 5 flux was more bluish green than that grown in Li 2 O-MoO 3 flux. The size of the spontaneously nucleated emerald grown in the former flux was larger than the latter, when crystallized by the slow cooling method. As for the solubility of beryl in the two fluxes, Li 2 O-V 2 O 5 flux was superior to Li 2 O-MoO 3 flux whose small solubility of SiO 2 caused an experimental problem to the temperature gradient method. The suitability of the two fluxes for the crystal growth of emerald by the flux method was discussed from the view point of various properties of above-mentioned two fluxes. (author)

Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

Energy Technology Data Exchange (ETDEWEB)

Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

2016-06-06

This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

Crystallization mechanisms of acicular crystals

Science.gov (United States)

Puel, François; Verdurand, Elodie; Taulelle, Pascal; Bebon, Christine; Colson, Didier; Klein, Jean-Paul; Veesler, Stéphane

2008-01-01

In this contribution, we present an experimental investigation of the growth of four different organic molecules produced at industrial scale with a view to understand the crystallization mechanism of acicular or needle-like crystals. For all organic crystals studied in this article, layer-by-layer growth of the lateral faces is very slow and clear, as soon as the supersaturation is high enough, there is competition between growth and surface-activated secondary nucleation. This gives rise to pseudo-twinned crystals composed of several needle individuals aligned along a crystallographic axis; this is explained by regular over- and inter-growths as in the case of twinning. And when supersaturation is even higher, nucleation is fast and random. In an industrial continuous crystallization, the rapid growth of needle-like crystals is to be avoided as it leads to fragile crystals or needles, which can be partly broken or totally detached from the parent crystals especially along structural anisotropic axis corresponding to weaker chemical bonds, thus leading to slower growing faces. When an activated mechanism is involved such as a secondary surface nucleation, it is no longer possible to obtain a steady state. Therefore, the crystal number, size and habit vary significantly with time, leading to troubles in the downstream processing operations and to modifications of the final solid-specific properties. These results provide valuable information on the unique crystallization mechanisms of acicular crystals, and show that it is important to know these threshold and critical values when running a crystallizer in order to obtain easy-to-handle crystals.

Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

2006-01-01

The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

Direction-specific interactions control crystal growth by oriented attachment

DEFF Research Database (Denmark)

Li, Dongsheng; Nielsen, Michael H; Lee, Jonathan R.I.

2012-01-01

The oriented attachment of molecular clusters and nanoparticles in solution is now recognized as an important mechanism of crystal growth in many materials, yet the alignment process and attachment mechanism have not been established. We performed high-resolution transmission electron microscopy ...

Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process; Utilisation d'une nouvelle reflectometrie spectroscopique pour optimiser un procede de fabrication CMOS/SOS durci aux radiations

Energy Technology Data Exchange (ETDEWEB)

Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D. [Raytheon Systems company, Microelectronics Div., Newport Beach, California (United States); Li, G.P.; Tsai, C.S. [California Univ., School of Engineering, Newport Beach, CA (United States)

1999-07-01

A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

Distributions of crystals and gas bubbles in reservoir ice during growth period

Directory of Open Access Journals (Sweden)

Zhi-jun Li

2011-06-01

Full Text Available In order to understand the dominant factors of the physical properties of ice in ice thermodynamics and mechanics, in-situ observations of ice growth and decay processes were carried out. Two samplings were conducted in the fast and steady ice growth stages. Ice pieces were used to observe ice crystals and gas bubbles in ice, and to measure the ice density. Vertical profiles of the type and size of ice crystals, shape and size of gas bubbles, and gas bubble content, as well as the ice density, were obtained. The results show that the upper layer of the ice pieces is granular ice and the lower layer is columnar ice; the average crystal size increases with the ice depth and remains steady in the fast and steady ice growth stages; the shape of gas bubbles in the upper layer of ice pieces is spherical with higher total content, and the shape in the middle and lower layers is cylinder with lower total content; the gas bubble size and content vary with the ice growth stage; and the ice density decreases with the increase of the gas bubble content.

Modifications of micro-pulling-down method for the growth of selected Li-containing crystals for neutron scintillator and VUV scintillation crystals

Science.gov (United States)

Pejchal, J.; Fujimoto, Y.; Chani, V.; Yanagida, T.; Yokota, Y.; Yoshikawa, A.; Nikl, M.; Beitlerova, A.

2012-12-01

To develop new and efficient neutron scintillator, Ti-doped LiAlO2 single crystal was grown by micro-pulling-down method. The X-ray excited radioluminescence spectra and neutron light yield were measured. Positive effect of Mg codoping on the overall scintillation efficiency was found. The BaLu2F8 single crystal was grown by micro-pulling-down method using low temperature gradient at growth interface and applying quenching immediately after growth process.

Studying Crystal Growth With the Peltier Effect

Science.gov (United States)

Larsen, David J., Jr.; Dressler, B.; Silberstein, R. P.; Poit, W. J.

1986-01-01

Peltier interface demarcation (PID) shown useful as aid in studying heat and mass transfer during growth of crystals from molten material. In PID, two dissimilar "metals" solid and liquid phases of same material. Current pulse passed through unidirectionally solidifying sample to create rapid Peltier thermal disturbance at liquid/solid interface. Disturbance, measured by thermocouple stationed along path of solidification at or near interface, provides information about position and shape of interface.

Method for single crystal growth of photovoltaic perovskite material and devices

Science.gov (United States)

Huang, Jinsong; Dong, Qingfeng

2017-11-07

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Amelogenin as a promoter of nucleation and crystal growth of apatite

Science.gov (United States)

Uskoković, Vuk; Li, Wu; Habelitz, Stefan

2011-02-01

Human dental enamel forms over a period of 2-4 years by substituting the enamel matrix, a protein gel mostly composed of a single protein, amelogenin with fibrous apatite nanocrystals. Self-assembly of amelogenin and the products of its selective proteolytic digestion are presumed to direct the growth of apatite fibers and their organization into bundles that eventually comprise the mature enamel, the hardest tissue in the mammalian body. This work aimed to establish the physicochemical and biochemical conditions for the growth of apatite crystals under the control of a recombinant amelogenin matrix (rH174) in combination with a programmable titration system. The growth of apatite substrates was initiated in the presence of self-assembling amelogenin particles. A series of constant titration rate experiments was performed that allowed for a gradual increase of the calcium and/or phosphate concentrations in the protein suspensions. We observed a significant amount of apatite crystals formed on the substrates following the titration of rH174 sols that comprised the initial supersaturation ratio equal to zero. The protein layers adsorbed onto the substrate apatite crystals were shown to act as promoters of nucleation and growth of calcium phosphates subsequently formed on the substrate surface. Nucleation lag time experiments have showed that rH174 tends to accelerate precipitation from metastable calcium phosphate solutions in proportion to its concentration. Despite their mainly hydrophobic nature, amelogenin nanospheres, the size and surface charge properties of which were analyzed using dynamic light scattering, acted as a nucleating agent for the crystallization of apatite. The biomimetic experimental setting applied in this study proves as convenient for gaining insight into the fundamental nature of the process of amelogenesis.

Growth and characterization of 2-Methylimidazolium D-tartrate single crystal

Science.gov (United States)

Srinivasan, T. P.; Anandhi, S.; Gopalakrishnan, R.

2011-03-01

Single crystal of 2-Methylimidazolium D-tartrate (2MImdT; C8N2O6H12) has been grown by slow evaporation solution growth technique at room temperature using mixed solvents of ethanol and deionized water. Single crystal X-ray diffraction study confirms that 2-Methylimidazolium D-tartrate belongs to monoclinic crystal system with non-centrosymmetric space group P21. The Fourier transform infrared spectrum of 2-Methylimidazolium D-tartrate reveals the presence of methyl and carboxyl functional groups in the compound. The mechanical properties of 2MImdT crystal were studied. The theoretical factor group analysis predicts 168 optical modes in the title compound. The dielectric behavior of 2MImdT crystals was studied at different frequencies and temperatures. Decomposition and melting point of 2MImdT were found using thermal measurements. SHG behavior of the title compound was demonstrated using Q-switched Nd:YAG laser.

Growth and characterization of hexaaquacobalt(II) dipotassium tetrahydrogen tetra-o-phthalate tetrahydrate crystals

Energy Technology Data Exchange (ETDEWEB)

Muthu, K. [Department of Chemistry, Annamalai University, Annamalainagar 608 002 (India); Bhagavannarayana, G. [National Physical Laboratory (CSIR), New Delhi 110 012 (India); Mahadevan, C.K. [Physics Research Centre, S.T. Hindu College, Nagercoil 629002 (India); Meenakshisundaram, S.P., E-mail: aumats2009@gmail.com [Department of Chemistry, Annamalai University, Annamalainagar 608 002 (India)

2013-05-15

Single crystals of hexaaquacobalt(II) dipotassium tetrahydrogen tetra-o-phthalate tetrahydrate K{sub 2}[Co(H{sub 2}O){sub 6}](C{sub 8}H{sub 5}O{sub 4}){sub 4}·4H{sub 2}O (PCHP), a semiorganic light-rose colored crystal of size ∼38 × 16 × 4 mm{sup 3} have been grown by slow evaporation solution growth technique. The lattice parameters of the as-grown crystals were obtained by single crystal X-ray diffraction analysis. The functional groups of the phthalate complex were confirmed by Fourier transform infrared spectroscopy analysis. The UV–Vis optical absorption spectrum of PCHP shows the lower optical cut-off at ∼300 nm and the crystal was transparent in the visible region. The structural perfection of the grown crystal has been analyzed by high-resolution X-ray diffraction (HRXRD) rocking curves (DC). The DC contains multi-peaks showing the structural grain boundaries. The dielectric, thermal and mechanical behaviors of the specimen were also studied. - Highlights: ► Bulk growth of large size phthalate complex crystals. ► Crystalline perfection of the grown crystal has been determined. ► HRXRD curves compared with pure material and the reasons are analyzed.

Sea level characterization of a 1100 g sapphire bolometer

CERN Document Server

Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

1999-01-01

A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Science.gov (United States)

Zoutendyk, J. A.

1976-01-01

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

Effect of amino acid doping on the growth and ferroelectric properties of triglycine sulphate single crystals

International Nuclear Information System (INIS)

Raghavan, C.M.; Sankar, R.; Mohan Kumar, R.; Jayavel, R.

2008-01-01

Effect of amino acids (L-leucine and isoleucine) doping on the growth aspects and ferroelectric properties of triglycine sulphate crystals has been studied. Pure and doped crystals were grown from aqueous solution by low temperature solution growth technique. The cell parameter values were found to significantly vary for doped crystals. Fourier transform infrared analysis confirmed the presence of functional groups in the grown crystal. Morphology study reveals that amino acid doping induces faster growth rate along b-direction leading to a wide b-plane and hence suitable for pyroelectric detector applications. Ferroelectric domain structure has been studied by atomic force microscopy and hysteresis measurements reveal an increase of coercive field due to the formation of single domain pattern

Metal Halide Perovskite Single Crystals: From Growth Process to Application

Directory of Open Access Journals (Sweden)

Shuigen Li

2018-05-01

Full Text Available As a strong competitor in the field of optoelectronic applications, organic-inorganic metal hybrid perovskites have been paid much attention because of their superior characteristics, which include broad absorption from visible to near-infrared region, tunable optical and electronic properties, high charge mobility, long exciton diffusion length and carrier recombination lifetime, etc. It is noted that perovskite single crystals show remarkably low trap-state densities and long carrier diffusion lengths, which are even comparable with the best photovoltaic-quality silicon, and thus are expected to provide better optoelectronic performance. This paper reviews the recent development of crystal growth in single-, mixed-organic-cation and fully inorganic halide perovskite single crystals, in particular the solution approach. Furthermore, the application of metal hybrid perovskite single crystals and future perspectives are also highlighted.

Morphology of growth of Bi2Sr2CaCu2O8 single crystals

Science.gov (United States)

Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Wolf, Th.; Berger, H.; Benoit, W.

1996-12-01

A good correlation of twins on the basal surface of flux-grown Bi2Sr2CaCu2Ox (BSCCO) single crystals with surface. growth steps is observed, the b-axis being perpendicular to the steps and, thus, parallel to the growth direction. It is found that mono-twin BSCCO single crystals produced by the travelling solvent floating zone method also grow preferentially along b, i.e. nearly perpendicularly to the boule axis, contrary to the common belief. This new understanding of the morphology of growth explains the nature of major defects in these crystals, which considerably change their measured superconducting properties, in a different way.

Fast and slow crystal growth kinetics in glass-forming melts

Energy Technology Data Exchange (ETDEWEB)

Orava, J.; Greer, A. L., E-mail: alg13@cam.ac.uk [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-06-07

Published values of crystal growth rates are compared for supercooled glass-forming liquids undergoing congruent freezing at a planar crystal-liquid interface. For the purposes of comparison pure metals are considered to be glass-forming systems, using data from molecular-dynamics simulations. For each system, the growth rate has a maximum value U{sub max} at a temperature T{sub max} that lies between the glass-transition temperature T{sub g} and the melting temperature T{sub m}. A classification is suggested, based on the lability (specifically, the propensity for fast crystallization), of the liquid. High-lability systems show “fast” growth characterized by a high U{sub max}, a low T{sub max} / T{sub m}, and a very broad peak in U vs. T / T{sub m}. In contrast, systems showing “slow” growth have a low U{sub max}, a high T{sub max} / T{sub m}, and a sharp peak in U vs. T / T{sub m}. Despite the difference of more than 11 orders of magnitude in U{sub max} seen in pure metals and in silica, the range of glass-forming systems surveyed fit into a common pattern in which the lability increases with lower reduced glass-transition temperature (T{sub g} / T{sub m}) and higher fragility of the liquid. A single parameter, a linear combination of T{sub g} / T{sub m} and fragility, can show a good correlation with U{sub max}. For all the systems, growth at U{sub max} is coupled to the atomic/molecular mobility in the liquid. It is found that, across the diversity of glass-forming systems, T{sub max} / T{sub g} = 1.48 ± 0.15.

Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Wiedwald, Ulf [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Fakultät für Physik, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg (Germany)

2014-01-14

FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

Science.gov (United States)

Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

2011-05-01

The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

Large potassium dihydrogen phosphate crystal growth using a three-vessel system for fusion lasers

International Nuclear Information System (INIS)

Sasaki, T.; Yokotani, A.; Yamanaka, T.; Nakai, S.; Yamanaka, C.

1989-01-01

Large scale laser fusion experiments are being performed in the Institute of Laser Engineering, Osaka University, using the glass laser system Gekko-XII. For this laser, very large nonlinear crystals of potassium dihydrogen phosphate (KDP) with a cross section over 40 X 40 cm is needed as a frequency converter to obtain a short wavelength laser. Generally the temperature falling method (TFM) is used to grow such a huge crystal, but the volume of the growing vessel becomes tremendously large. The three-vessel system (TVS), which is a constant temperature and concentration method, allows better control of supersaturation than does the TFM, and the volume of the main growth vessel can be smaller than that in the case of the TFM. The authors have constructed a TVS. The KDP crystal grew in the growth tank that was kept at a constant temperature of 20 +- 0.01 0 C. The authors show the growth history of the KDP crystal of a 40- X 40-cm cross section. This system is now being operated to obtain the KDP of 100-cm height, and a theoretical estimate of the growth rate is under consideration. These results are presented

Semiconducting icosahedral boron arsenide crystal growth for neutron detection

Science.gov (United States)

Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

2011-03-01

Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

Energy Technology Data Exchange (ETDEWEB)

Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

2010-07-01

Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

Crystal growth and characterization of REFeAsO (RE = La, Nd) and LaFePO

Energy Technology Data Exchange (ETDEWEB)

Adamski, Agnes; Abdel-Hafiez, Mahmoud; Krellner, Cornelius [Physikalisches Institut, Goethe Universitaet, D-60438 Frankfurt am Main (Germany)

2016-07-01

Since the discovery of iron-based superconductors, much effort was put on the crystal growth of the various systems and their characterization. Although, the initial flurry of activities was mainly performed on the 1111 systems, the focus has been rapidly shifted towards other materials, were large high-quality crystals are available. In contrast, the growth of sizeable high-quality single crystals of 1111 compounds is extremely challenging, slowing down the scientific progress in this type of compounds. Here we report on the crystal growth of 1111-type materials under ambient pressure conditions and by using the flux technique. The influence of the material to flux ratio was systematically studied. Subsequently, the obtained samples were analyzed with powder diffractometry, electron microscope, energy dispersive X-ray analysis, Laue diffractometry and magnetic measurements to analyze the structural and magnetic properties.

GROWTH RATE DISTRIBUTION OF BORAX SINGLE CRYSTALS ON THE (001 FACE UNDER VARIOUS FLOW RATES

Directory of Open Access Journals (Sweden)

Suharso Suharso

2010-06-01