Orientation acoustic radiation of electrons in silicon thick crystal

International Nuclear Information System (INIS)

Alejnik, A.N.; Afanas'ev, S.G.; Vorob'ev, S.A.; Zabaev, V.N.; Il'in, S.I.; Kalinin, B.N.; Potylitsyn, A.P.

1989-01-01

Results of measuring orientation acoustic radiation of 900 and 500 MeV electrons during their movement along crystallographic axis in thick silicon crystal (h=20 mm thickness) are presented for the first time. Analysis of obtained results shows that dynamic mechanism describes rather completely the main regularities of orientation dependence of the amplitude of acoustic signal occuring under electron motion near crystallographic axis of the crystal. Phenomena of orientation acoustic radiation can be also used for investigation of solid bodies. Orientation both of thin and rather thick monocrystals can be conducted on the basis of dynamic mechanism of elastic wave excitation in crystals

Porosity and thickness effect of porous silicon layer on photoluminescence spectra

Science.gov (United States)

Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

Growth and characterization of thick cBN coatings on silicon and tool substrates

International Nuclear Information System (INIS)

Bewilogua, K.; Keunecke, M.; Weigel, K.; Wiemann, E.

2004-01-01

Recently some research groups have achieved progress in the deposition of cubic boron nitride (cBN) coatings with a thickness of 2 μm and more, which is necessary for cutting tool applications. In our laboratory, thick cBN coatings were sputter deposited on silicon substrates using a boron carbide target. Following a boron carbide interlayer (few 100 nm thick), a gradient layer with continuously increasing nitrogen content was prepared. After the cBN nucleation, the process parameters were modified for the cBN film growth to a thickness of more than 2 μm. However, the transfer of this technology to technically relevant substrates, like cemented carbide cutting inserts, required some further process modifications. At first, a titanium interlayer had to be deposited followed by a more than 1-μm-thick boron carbide layer. The next steps were identical to those on silicon substrates. The total coating thickness was in the range of 3 μm with a 0.5- to nearly 1-μm-thick cBN top layer. In spite of the enormous intrinsic stress, both the coatings on silicon and on cemented carbide exhibited a good adhesion and a prolonged stability in humid air. Oxidation experiments revealed a stability of the coating system on cemented carbide up to 700 deg. C and higher. Coated cutting inserts were tested in turning operations with different metallic workpiece materials. The test results will be compared to those of well-established cutting materials, like polycrystalline cubic boron nitride (PCBN) and oxide ceramics, considering the wear of coated tools

Crystallization of silicon films of submicron thickness by blue-multi-laser-diode annealing

Energy Technology Data Exchange (ETDEWEB)

Mugiraneza, Jean de Dieu; Shirai, Katsuya; Suzuki, Toshiharu; Okada, Tatsuya; Noguchi, Takashi [University of the Ryukyus, Okinawa (Japan); Matsushima, Hideki; Hashimoto, Takao; Ogino, Yoshiaki; Sahota, Eiji [Hitachi Computer Peripherals Co. Ltd, Kanagawa (Japan)

2012-01-15

Blue-Multi-Laser-Diode Annealing (BLDA) was performed in the continuous wave (CW) mode on Si films as thick as 0.5 {mu}m and 1 {mu}m deposited by rf sputtering. As a result of controlling the laser power from 4.0 to 4.8 W, a whole Si layer of 0.5 {mu}m in thickness was completely crystallized and consisted of a columnar structure of fine grains beneath a partially melted Si surface owing to the high temperature gradient along the depth in the Si layer. After additional hydrogenation in a furnace ambient, the ratio of the photo/dark current under AM 1.5 illumination distinctly improved to 6 times higher than that of as-deposited condition. The BLDA is expected to be applied to thin-film solar cells and/or to thin film transistor (TFT) photo-sensor systems on panels as a new low-temperature poly-silicon (LTPS) fabrication technique.

The effect of sand/cement ratio on radon exhalation from cement specimens containing 226Ra

International Nuclear Information System (INIS)

Takriti, S.; Shweikani, R.; Ali, A. F.; Rajaa, G.

2002-09-01

Portland cement was mixed with different kind of sand (calcite and silica) in different ratio to produce radioactive specimens with radium chloride. The release of radon from these samples was studied. The results showed that radon release from the calcite-cement samples increased with the increases of the sand mixed ratio until fixed value (about 20%) then decreased to less than its release from the beginning, and the release changed with the sand size also. Radon release from silica-cement samples had the same observations of calcite-cement samples. It was found that calcite-cement reduced the radon exhalation quantity rather than the silica-cement samples. The decreases of the radon exhalation from the cement-sand may be due to the creation of free spaces in the samples, which gave the possibility to radon to decay into these free spaces rather than radon exhalation. The daughters of the radon decay 214 Bi and 214 Pb reported by gamma measurements of the cement-sand samples. (author)

Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

Science.gov (United States)

Franta, Daniel; Franta, Pavel; Vohánka, Jiří; Čermák, Martin; Ohlídal, Ivan

2018-05-01

Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.

Resistivity and thickness effects in dendritic web silicon solar cells

Science.gov (United States)

Meier, D. L.; Hwang, J. M.; Greggi, J.; Campbell, R. B.

1987-01-01

The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

Energy Technology Data Exchange (ETDEWEB)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2010-11-10

A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

International Nuclear Information System (INIS)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

2010-01-01

A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Optimized thick-wall cylinders by virtue of Poisson's ratio selection

International Nuclear Information System (INIS)

Whitty, J.P.M.; Henderson, B.; Francis, J.; Lloyd, N.

2011-01-01

The principal stress distributions in thick-wall cylinders due to variation in the Poisson's ratio are predicted using analytical and finite element methods. Analyses of appropriate brittle and ductile failure criteria show that under the isochoric pressure conditions investigated that auextic (i.e. those possessing a negative Poisson's ratio) materials act as stress concentrators; hence they are predicted to fail before their conventional (i.e. possessing a positive Poisson's ratio) material counterparts. The key finding of the work presented shows that for constrained thick-wall cylinders the maximum tensile principal stress can vanish at a particular Poisson's ratio and aspect ratio. This phenomenon is exploited in order to present an optimized design criterion for thick-wall cylinders. Moreover, via the use of a cogent finite element model, this criterion is also shown to be applicable for the design of micro-porous materials.

Usefulness of left ventricular wall thickness-to-diameter ratio in thallium-201 scintigraphy

International Nuclear Information System (INIS)

Manno, B.; Hakki, A.H.; Kane, S.A.; Iskandrian, A.S.

1983-01-01

The ratio of left ventricular wall thickness to the cavity dimension, as seen on thallium-201 images, was used in this study to predict left ventricular ejection fraction and volume. We obtained rest thallium-201 images in 50 patients with symptomatic coronary artery disease. The thickness of a normal-appearing segment of the left ventricular wall and the transverse diameter of the cavity were measured in the left anterior oblique projection. The left ventricular ejection fraction and volume in these patients were determined by radionuclide ventriculography. There was a good correlation between thickness-to-diameter ratio and ejection fraction and end-systolic volume. In 18 patients with a thickness-to-diameter ratio less than 0.70, the ejection fraction was lower than in the 16 patients with thickness-to-diameter ratio greater than or equal to 1.0. Similarly, in patients with a thickness-to-diameter ratio less than 0.70, the end-diastolic and end-systolic volume were higher than in the remaining patients with higher thickness-to-diameter ratios. All 18 patients with a thickness-to-diameter ratio less than 0.70 had ejection fractions less than 40%; 14 of 15 patients with a thickness-to-diameter ratio greater than or equal to 1.0 had an ejection fraction greater than 40%. The remaining 16 patients with a thickness-to-diameter ratio of 0.7-0.99 had intermediate ejection fractions and volumes.(ABSTRACT TRUNCATED AT 250 WORDS)

Coherent spin transport through a 350 micron thick silicon wafer.

Science.gov (United States)

Huang, Biqin; Monsma, Douwe J; Appelbaum, Ian

2007-10-26

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

Study physico-chemical of the sand of the western ERG (Western South Algeria)

Energy Technology Data Exchange (ETDEWEB)

Allam, M.; Tafraoui, A. [Faculty of sciences and technology, University of Bechar (Algeria)], email: allammessaouda@yahoo.fr

2011-07-01

Silica is gaining increasing importance as it is the base for the production of pure silicon, for which several applications are under development in the electronic and solar energy sectors. The aim of this study is to characterize the sand taken from the Western Erg of Algeria to determine the percentage of silicon it contains. Characterization was done through physical analysis to determine the granulometry of the sand. A chemical analysis was next performed, using diffraction of X-rays and a scanning electron microscope to determine the chemical composition of the sand. Results showed that the sand is mainly made of quartz in the form of rounded and subbarrondis grains and that silicon is prevalent, accounting for 98% of the composition. This study demonstrated that sand from the Western Erg of Algeria is rich in silicon and could be used for silicon production.

The energy efficiency of oil sands extraction: Energy return ratios from 1970 to 2010

International Nuclear Information System (INIS)

Brandt, Adam R.; Englander, Jacob; Bharadwaj, Sharad

2013-01-01

It has been argued that the oil sands industry is not energy efficient: comparatively large energy inputs are required per unit of energy output from oil sands operations. Unfortunately, quantitative work to date in this area has suffered from poor data availability and uncertain methods. We apply a new methodology and new dataset to compute ERRs (energy return ratios) for the oil sands industry. We collected monthly oil sands energy consumption and output data from 1970 to 2010. Current oil sands operations have mine mouth NERs (net energy returns) of about 6 GJ output per GJ of energy consumed and point of use energy returns of about 3 GJ/GJ. Long-term trends show oil sands operations becoming significantly more efficient: point of use NER increased from about 1 GJ/GJ in 1970 to 3 GJ/GJ in 2010. These energy returns are lower than those observed in historical conventional oil operations, but low energy returns are not likely to hinder development of oil sands operations due to the large resource in place and the ability for largely self-fueled pathways to return significant amounts of energy to society for every unit of external energy supplied. - Highlights: • Oil sands operations have become significantly more energy efficient over the history of the industry. • Oil sands production is largely fueled with energy from the bitumen resource itself, making external energy returns high. • Oil sands production is still significantly less efficient than conventional oil production

Determination of the equivalent intergranular void ratio - Application to the instability and the critical state of silty sand

Directory of Open Access Journals (Sweden)

Nguyen Trung-Kien

2017-01-01

Full Text Available This paper presents an experimental study of mechanical response of natural Camargue silty sand. The analysis of test results used the equivalent intergranular void ratio instead of the global void ratio. The calculation of equivalent intergranular void ratio requires the determination of parameter b which represents, physically, the fraction of active fines participating on the chain forces network, hence the strength of the soil. A new formula for determining the parameter b by using an approach based on the coordination number distribution and probability calculation is proposed. The validation of the developed relationship was done through back-analysis of published datasets in literature on the effect of fines content on silty sand behavior. It is shown that the equivalent intergranular void ratio calculated with the b value obtained by the new formula is able to provide strong correlation to not only the critical state of but also the onset of instability of various silty sands, in different terms as peak deviator stress, peak stress ratio or cyclic resistance. Therefore, it is suggested that the use of the equivalent void ratio concept and the new b calculating formula is highly desirable in predicting of the silty sand behavior.

Identification of Significant Impact of Silicon Foundry Sands Mining on LCIA

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Jozef Mitterpach

2015-12-01

Full Text Available This paper presents a case study based on a LCA (Life Cycle Assessment research program of the silicon foundry sand (SFS due to the large quantity of produced waste foundry sand (WFS. The foundry waste is a high priority sector within the growing European foundry industry. It is necessary to understand the full life cycle of the foundry waste in order to correctly identify magnitude and types of impacts it has on the environment. System boundary includes the processes: mining, modification, packing, storage and transport to foundry. Inventory analysis data were analyzed and finally converted to the functional unit, which has been defined as one ton of SFS. The resulting environmental impact of SFS production in endpoint is: consumption of natural resources 70.9%, ecosystem quality 18.2% and human health 10.9%. The following portions, with respective percentages, have the greatest overall effect on these results: diesel fuel consumption 32.4% and natural gas consumption 28.7%, electricity usage 17.2%, transport 12.2%, devastation caused by the SFS 5.35% and oil (engine, gear and hydraulic consumption 4.14%. The highest contributor to the diesel fuel consumption is the SFS exploitation. The overall effect of desiccation was 35.8% and was caused by high consumption of resources and electricity.

Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

International Nuclear Information System (INIS)

Jiang Huihua; Yang Deren; Ma Xiangyang; Tian Daxi; Li Liben; Que Duanlin

2006-01-01

The growth of p/p + silicon epitaxial silicon wafers (epi-wafers) without misfit dislocations has been successfully achieved by using heavily boron-doped Czochralski (CZ) silicon wafers codoped with desirable level of germanium as the substrates. The lattice compensation by codoping of germanium and boron into the silicon matrix to reduce the lattice mismatch between the substrate (heavily boron-doped) and epi-layer (lightly boron-doped) is the basic idea underlying in the present achievement. In principle, the codoping of germanium and boron in the CZ silicon can be tailored to achieve misfit dislocation-free epi-layer with required thickness. It is reasonably expected that the presented solution to elimination of misfit dislocations in the p/p + silicon wafers can be applied in the volume production

Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors.

Science.gov (United States)

Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo

2015-01-14

Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK(-1) which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D*) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 10(8) and 1.83 × 10(8) cm Hz(1/2) W(-1) for sensors of 52 nm thick poly-Si, and 5.75 × 10(7) and 3.95 × 10(7) cm Hz(1/2) W(-1) for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology.

High aspect ratio channels in glass and porous silicon

Energy Technology Data Exchange (ETDEWEB)

Liang, H.D. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Dang, Z.Y. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Wu, J.F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Kan, J.A. van; Qureshi, S. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Ynsa, M.D.; Torres-Costa, V. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Centro de Micro-Análisis de Materiales (CMAM), Universidad Autónoma de Madrid, Campus de Cantoblanco Edif. 22, Faraday 3, E-28049 Madrid (Spain); Maira, A. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Venkatesan, T.V. [Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Breese, M.B.H., E-mail: phymbhb@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

2017-03-01

We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

Formation of cross-cutting structures with different porosity on thick silicon wafers

Directory of Open Access Journals (Sweden)

Vera A. Yuzova

2017-06-01

The second type pass-through structures include a macroporous silicon layer with a thickness of 250 μm which interlock in the depth of the silicon wafer to form a cavity with a size of 4–8 μm. For the formation of the second type structures we only used the first one of the abovementioned stages, the etching time being longer, i.e. 210 min. All the etching procedures were carried out in a cooling chamber at 5 °C. The developed technology will provided for easier and more reliable formation of the monolithic structures of membrane-electrode assembly micro fuel cells.

The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p—n-junctions

Directory of Open Access Journals (Sweden)

Gnilenko A. B.

2012-02-01

Full Text Available A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package. The dependence of solar cell characteristics on the silicon wafer thickness is investigated for a wide range of values.

Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement

International Nuclear Information System (INIS)

Yang Yongliang; Li Xinxin

2011-01-01

The p-type silicon giant piezoresistive coefficient is measured in top-down fabricated nano-thickness single-crystalline-silicon strain-gauge resistors with a macro-cantilever bending experiment. For relatively thicker samples, the variation of piezoresistive coefficient in terms of silicon thickness obeys the reported 2D quantum confinement effect. For ultra-thin samples, however, the variation deviates from the quantum-effect prediction but increases the value by at least one order of magnitude (compared to the conventional piezoresistance of bulk silicon) and the value can change its sign (e.g. from positive to negative). A stress-enhanced Si/SiO 2 interface electron-trapping effect model is proposed to explain the 'abnormal' giant piezoresistance that should be originated from the carrier-concentration change effect instead of the conventional equivalent mobility change effect for bulk silicon piezoresistors. An interface state modification experiment gives preliminary proof of our analysis.

A 240-channel thick film multi-chip module for readout of silicon drift detectors

International Nuclear Information System (INIS)

Lynn, D.; Bellwied, R.; Beuttenmueller, R.; Caines, H.; Chen, W.; DiMassimo, D.; Dyke, H.; Elliott, D.; Grau, M.; Hoffmann, G.W.; Humanic, T.; Jensen, P.; Kleinfelder, S.A.; Kotov, I.; Kraner, H.W.; Kuczewski, P.; Leonhardt, B.; Li, Z.; Liaw, C.J.; LoCurto, G.; Middelkamp, P.; Minor, R.; Mazeh, N.; Nehmeh, S.; O'Conner, P.; Ott, G.; Pandey, S.U.; Pruneau, C.; Pinelli, D.; Radeka, V.; Rescia, S.; Rykov, V.; Schambach, J.; Sedlmeir, J.; Sheen, J.; Soja, B.; Stephani, D.; Sugarbaker, E.; Takahashi, J.; Wilson, K.

2000-01-01

We have developed a thick film multi-chip module for readout of silicon drift (or low capacitance ∼200 fF) detectors. Main elements of the module include a custom 16-channel NPN-BJT preamplifier-shaper (PASA) and a custom 16-channel CMOS Switched Capacitor Array (SCA). The primary design criteria of the module were the minimizations of the power (12 mW/channel), noise (ENC=490 e - rms), size (20.5 mmx63 mm), and radiation length (1.4%). We will discuss various aspects of the PASA design, with emphasis on the preamplifier feedback network. The SCA is a modification of an integrated circuit that has been previously described [1]; its design features specific to its application in the SVT (Silicon Vertex Tracker in the STAR experiment at RHIC) will be discussed. The 240-channel multi-chip module is a circuit with five metal layers fabricated in thick film technology on a beryllia substrate and contains 35 custom and commercial integrated circuits. It has been recently integrated with silicon drift detectors in both a prototype system assembly for the SVT and a silicon drift array for the E896 experiment at the Alternating Gradient Synchrotron at the Brookhaven National Laboratory. We will discuss features of the module's design and fabrication, report the test results, and emphasize its performance both on the bench and under experimental conditions

Critical thickness ratio for buckled and wrinkled fruits and vegetables

Science.gov (United States)

Dai, Hui-Hui; Liu, Yang

2014-11-01

This work aims at establishing the geometrical constraint for buckled and wrinkled shapes by modeling a fruit/vegetable with exocarp and sarcocarp as a hyperelastic layer-substrate structure subjected to uniaxial compression. A careful analysis on the derived bifurcation condition leads to the finding of a critical thickness ratio which separates the buckling and wrinkling modes, and remarkably, which is independent of the material stiffnesses. More specifically, it is found that if the thickness ratio is smaller than this critical value a fruit/vegetable should be in a buckled shape (under a sufficient stress); if a fruit/vegetable is in a wrinkled shape the thickness ratio is always larger than this critical value. To verify the theoretical prediction, we consider four types of buckled fruits/vegetables and four types of wrinkled fruits/vegetables with three samples in each type. The geometrical parameters for the 24 samples are measured and it is found that indeed all the data fall into the theoretically predicted buckling or wrinkling domains.

On determining dead layer and detector thicknesses for a position-sensitive silicon detector

Science.gov (United States)

Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

2018-04-01

In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates

International Nuclear Information System (INIS)

Batignani, G.; Angelini, C.; Bisogni, M.G.; Boscardin, M.; Bettarini, S.; Bondioli, M.; Bosisio, L.; Bucci, F.; Calderini, G.; Carpinelli, M.; Ciacchi, M.; Dalla Betta, G.F.; Dittongo, S.; Forti, F.; Giorgi, M.A.; Gregori, P.; Han, D.J.; Manfredi, P.F.; Manghisoni, M.; Marchiori, G.; Neri, N.; Novelli, M.; Paoloni, E.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Rizzo, G.; Ronchin, S.; Rosso, V.; Simi, G.; Speziali, V.; Stefanini, A.; Zorzi, N.

2004-01-01

We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800 μm thick silicon bulk, contacted on the backplane. We have studied the current amplification for two different doping profiles of the emitter, obtaining values of β ranging from 60 to 3000. For various emitter and base configurations, we measured the static device characteristics and extracted the leakage currents and the base resistance, verifying the fundamental relationship between them and the total base capacitances. The use of such phototransistors to detect ionizing particles is exploited and discussed

A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Batignani, G. E-mail: giovanni.batignani@pi.infn.it; Angelini, C.; Bisogni, M.G.; Boscardin, M.; Bettarini, S.; Bondioli, M.; Bosisio, L.; Bucci, F.; Calderini, G.; Carpinelli, M.; Ciacchi, M.; Dalla Betta, G.F.; Dittongo, S.; Forti, F.; Giorgi, M.A.; Gregori, P.; Han, D.J.; Manfredi, P.F.; Manghisoni, M.; Marchiori, G.; Neri, N.; Novelli, M.; Paoloni, E.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Rizzo, G.; Ronchin, S.; Rosso, V.; Simi, G.; Speziali, V.; Stefanini, A.; Zorzi, N

2004-09-01

We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800 {mu}m thick silicon bulk, contacted on the backplane. We have studied the current amplification for two different doping profiles of the emitter, obtaining values of {beta} ranging from 60 to 3000. For various emitter and base configurations, we measured the static device characteristics and extracted the leakage currents and the base resistance, verifying the fundamental relationship between them and the total base capacitances. The use of such phototransistors to detect ionizing particles is exploited and discussed.

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

Science.gov (United States)

Chow, Philippe K.; Yang, Wenjie; Hudspeth, Quentin; Lim, Shao Qi; Williams, Jim S.; Warrender, Jeffrey M.

2018-04-01

We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

Technology unlocks tar sands energy

Energy Technology Data Exchange (ETDEWEB)

Law, C

1967-09-25

Tar sand processing technology has been developed primarily in the categories of extraction techniques and in-situ processing. In October, a $235 million venture into tar sand processing will be inspected by visitors from many points on the globe. A synthetic crude of premium quality will be flowing through a 16-in. pipeline from the Tar Island plant site of Great Canadian Oil Sands to Edmonton. This processing plant uses an extractive mining technique. The tar sand pay zone in this area averages approximately 150 ft in thickness with a 50-ft overburden. It has been estimated that the tar sands cannot be exploited when the formation thickness is less than 100 ft and overburden exceeds the same amount. This indicates that extraction techniques can only be used to recover approximately 15% of the tar sand deposits. An in-situ recovery technique developed by Shell of Canada is discussed in detail. In essence it is selective hydraulic fracturing, followed by the injection of emulsifying chemicals and steam.

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

Science.gov (United States)

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

The Effects of Substitution of The Natural Sand by Steel Slag in The Properties of Eco-Friendly Concrete with The 1:2:3 Ratio Mixing Method

Science.gov (United States)

Rahmawati, A.; Saputro, I. N.

2018-03-01

This study was motivated by the need for the development of eco-friendly concrete, and the use of large quantities of steel slag as an industrial waste which is generated from the steel manufacturers. This eco-friendly concrete was developed with steel slag as a substitute for natural sand. Properties of concrete which used waste slag as the fine aggregate with the 1 cement: 2 sand : 3 coarse aggregate ratio mixing method were examined. That ratio was in volume. Then a part of natural sand replaced with steel slag sand in six variations percentages that were 0 %, 20 %, 40 %, 60 %, 80 % and 100 %. The compressive strength, tensile strength, and flexural strength of concrete specimens were determined after curing for 28 days. The research results demonstrate that waste steel slag can increase the performance of concrete. The optimal percentage substitution natural sand by steel slag sand reached of slag on the percentage of 20 % which reached strength ratios of steel slag concrete to the strength of conventional concrete with natural sandstone were 1.37 for compressive strength and 1.13 for flexural strength. While the tensile strength reached a higher ratio of concrete with steel slag sand to the concrete with natural sand on the 80% substitution of natural sand with steel slag sand.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

Science.gov (United States)

Khalil, M.; Laurent, P.; Lebrun, F.; Tatischeff, V.; Dolgorouky, Y.; Bertoli, W.; Breelle, E.

2016-11-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1-10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1-10 MeV range.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

International Nuclear Information System (INIS)

Khalil, M.; Laurent, P.; Lebrun, F.; Tatischeff, V.; Dolgorouky, Y.; Bertoli, W.; Breelle, E.

2016-01-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1–10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1–10 MeV range.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

Energy Technology Data Exchange (ETDEWEB)

Khalil, M., E-mail: khalilmohammad@hotmail.com [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); Laurent, P.; Lebrun, F. [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); CEA, Centre de Saclay, 91191 Gif-Sur-Yvette Cedex (France); Tatischeff, V. [CSNSM, IN2P3/CNRSand Paris-Sud University, 91405 Orsay Campus (France); Dolgorouky, Y.; Bertoli, W.; Breelle, E. [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France)

2016-11-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1–10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1–10 MeV range.

Effect of length to thickness ratio on free vibration analysis of thick fiber reinforced plastic skew cross-ply laminate with circular cutout

Science.gov (United States)

Srividya, K.; Reddy, Ch. Kishore; Sumanth, Ch. Mohan; Krishnaiah, P. Gopala; Kishan, V. Mallikharjuna

2018-04-01

The present investigation deals with the free vibration analysis of a thick four-layered symmetric cross-ply skew laminated composite plate with a circular cutout. Three dimensional finite element models (FEM) which use the elasticity theory for the determination of stiffness matrices are modeled in ANSYS software to evaluate first five natural frequencies of the laminate. The variations of the first five natural frequencies with respect to length to thickness ratio (S) for different diameter to length ratios (d/l) are presented. It is observed that, the natural frequencies decreases with increase of thickness ratio(S).

Effect of Thickness-to-Chord Ratio on Flow Structure of Low Swept Delta Wing

Science.gov (United States)

Gulsacan, Burak; Sencan, Gizem; Yavuz, Mehmet Metin

2017-11-01

The effect of thickness-to-chord (t/C) ratio on flow structure of a delta wing with sweep angle of 35 degree is characterized in a low speed wind tunnel using laser illuminated smoke visualization, particle image velocimetry, and surface pressure measurements. Four different t/C ratio varying from 4.75% to 19% are tested at angles of attack 4, 6, 8, and 10 degrees for Reynolds numbers Re =10,000 and 35,000. The results indicate that the effect of thickness-to-chord ratio on flow structure is quite substantial, such that, as the wing thickness increases, the flow structure transforms from leading edge vortex to three-dimensional separated flow regime. The wing with low t/C ratio of 4.75% experiences pronounced surface separation at significantly higher angle of attack compared to the wing with high t/C ratio. The results might explain some of the discrepancies reported in previously conducted studies related to delta wings. In addition, it is observed that the thickness of the shear layer separated from windward side of the wing is directly correlated with the thickness of the wing. To conclude, the flow structure on low swept delta wing is highly affected by t/C ratio, which in turn might indicate the potential usage of wing thickness as an effective flow control parameter.

A study on tissue compensator thickness ratio and an application for 4MV X-rays

International Nuclear Information System (INIS)

Kim, Young Bum; Kwon, Young Ho; Jung, Hee Young; Kim, You Hyun

1996-01-01

A radiation beam incident on irregular or sloping surface produces an inhomogeneity of absorbed dose. The use of a tissue compensator can partially correct this dose inhomogeneity. The tissue compensator should be made based on experimentally measured thickness ratio. The thickness ratio depends on beam energy, distance from the tissue compensator to the surface of patient, field size, treatment depth, tissue deficit and other factors. In this study, the thickness ratio was measured for various field size of 5cm x 5cm, 10cm x 10cm, 15cm x 15cm, 20 x 20cm for 4MV X-ray beams. The distance to the compensator from the X-ray target was fixed, 49cm, and measurement depth was 3, 5, 7, 9 cm. For each measurement depth, the tissue deficit was changed from 0 to(measurement depth-1)cm by 1cm increment. As a result, thickness ratio was decreased according to field size and tissue deficit was increased. Use of a representative thickness ratio for tissue compensator, there was 10% difference of absorbed dose but use of a experimentally measured thickness ratio for tissue compensator, there was 2% difference of absorbed dose. Therefore, it can be concluded that the tissue compensator made by experimentally measured thickness ratio can produce good distribution with acceptable inhomogeneity and such tissue compensator can be effectively applied to clinical radiotherapy.

High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

Science.gov (United States)

Ewing, Jacob; Wang, Yuzheng; Arnold, David P.

2018-05-01

This paper investigates methods for electroplating thick (>20 μm), high-coercivity CoPt films using high current densities (up to 1 A/cm2) and elevated bath temperatures (70 °C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm2 and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 μm thick in 1 hr on silicon substrates (0.35 μm/min plating rate). After standard thermal treatment (675°C, 30 min) to achieve the ordered L10 crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m3.

Thick and low-stress PECVD amorphous silicon for MEMS applications

International Nuclear Information System (INIS)

Iliescu, Ciprian; Chen Bangtao

2008-01-01

This paper presents a solution for the deposition of thick amorphous silicon (α-Si:H) in PECVD reactors for MEMS applications, such as sacrificial layer or mask layer for dry or wet etching of glass. This achievement was possible by tuning the deposition parameters to a 'zero' value of the residual stress in the α-Si:H layer. The influence of the process parameters, such as power, frequency mode, temperature, pressure and SiH 4 /Ar flow rates for tuning the residual stress and for a good deposition rate is analyzed. The deposition of low-stress and thick (more than 12 µm in our case) α-Si:H layers was possible without generation of hillock defects (previously reported in literature for layers thicker then 2 µm). Finally, the paper presents some MEMS applications of such a deposited α-Si:H layer: masking layer for deep wet etching as well as dry etching of glass, and sacrificial layer for dry or wet release

Effect of annealing, thickness ratio and bend angle on springback of AA6061-T6 with non-uniform thickness section

Directory of Open Access Journals (Sweden)

Adnan M.F.

2017-01-01

Full Text Available Non-uniform thickness section section is considered one of the most effective approaches to reduce automotive part weight. Reduction in term of mass and size result in less fuel consumption and greenhouse gases. Thickness is the most significant parameter to formability, therefore forming a section with non-uniform thickness becomes a great challenge. Improper process and incorrect decision may lead to severe defect and one of the main concerns is the springback. This study will focus on springback behaviour of non-uniform thickness AA6061 strip with complex profile using Taguchi Method. Profile projector (PC 3000 is used to measure the spring back and two-line technique is applied to measure angles (after loading between two lines. Three parameters (i.e. annealing temperature, thickness ratio and bend angle are studied, and results determine that the most significant parameter is bend angle, followed by thickness ratio, and then by the annealing temperature of the specimen during bending process.

Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

Science.gov (United States)

Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

2014-10-01

using an excitation frequency of 13.56 MHz with a plasma power density of 0.3 W/cm2. Glass (Corning type Eagle) and mono-crystalline silicon wafer substrates were coated in the same run at a substrate temperature of 185°C. The deposition pressure was 4 mbar and the substrate-electrode distance 20 mm. Mixtures of silane (SiH4), 1% TMB (B(CH3)3) diluted in helium, hydrogen (H2), and carbon dioxide (CO2) gases were used at flow rates of 1.25 - 0.18/0.32/500/0 - 1.07) sccm (standard cubic centimeters per minute) for the deposition of μc-SiOx:H(B) layers. By changing the CO2/SiH4 gas flow rate ratio from 0 to 6, μc-SiOx:H(B) layers with a composition of 0 Beer-Lambert law, as suggested by Ref. [3]. The film thickness d was measured using the step profiler close to the measurement spot of the spectrophotometer. It is important to measure the transmittance T(λ) and the reflectance R(λ) at the same spot on the sample, to avoid inaccuracies in the calculated absorption spectra that arise from non-uniformity of the film thickness and different positions of the reflectance and transmittance minima and maxima in the spectrum [4]. Hard X-ray photoelectron spectroscopy (HAXPES) experiments were conducted at the HiKE end-station [5] on the KMC-1 beamline [6] of the BESSY-II electron storage ring. This end-station is equipped with a Scienta R4000 electron energy analyzer capable of measuring photoelectron kinetic energies up to 10 keV. A pass energy of 200 eV was used for all measurements. Spectra were recorded with a photon energy of 2003 eV using the first and fourth order supplied by a Si(111) double crystal monochromator. The combined analyzer plus beamline resolution is approx. 0.25 eV for spectra taken at both photon energies. The top surface of the sample was electrically grounded for all measurements. The binding energy was calibrated by measuring the 4f spectrum of a grounded Au foil and setting the Au 4f7/2 binding energy equal to 84.00 eV. In SiO2, the inelastic mean

Effects of Diatomite–Limestone Powder Ratio on Mechanical and Anti-Deformation Properties of Sustainable Sand Asphalt Composite

Directory of Open Access Journals (Sweden)

Yongchun Cheng

2018-03-01

Full Text Available Diatomite has gained more and more interest as a new resource, since it has potential as a favorable alternative to mineral filler in the construction of asphalt pavement compared with ordinary limestone powder. In this paper, the mechanical and anti-deformation properties of sand asphalt composites with various proportions of diatomite were investigated by a uniaxial compression failure test, a uniaxial compression repeated creep test, and a low-temperature splitting test in order to determine the optimal replacement content of ordinary limestone powder. Five groups of sand asphalts with various volume ratios of diatomite to limestone (0:1, 0.25:0.75, 0.5:0.5, 0.75:0.25, and 1:0 were determined by the simplex-lattice mixture design (SLD method. The results reveal that the compression strength, anti-deformation properties, and low-temperature crack resistance of sand asphalts are improved through the use of diatomite. Furthermore, the optimal ratio (0.327:0.673 of limestone to diatomite is determined by the SLD method, according to secant modulus and creep strain results.

High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

Science.gov (United States)

Gu, Xiaodan; Liu, Zuwei; Gunkel, Ilja; Olynick, Deirdre; Russell, Thomas; University of Massachusetts Amherst Collaboration; Oxford Instrument Collaboration; Lawrence Berkeley National Lab Collaboration

2013-03-01

High-aspect-ratio sub-15 nm silicon trenches are fabricated directly from plasma etching of a block copolymer (BCP) mask. Polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) 40k-b-18k was spin coated and solvent annealed to form cylindrical structures parallel to the silicon substrate. The BCP thin film was reconstructed by immersion in ethanol and then subjected to an oxygen and argon reactive ion etching to fabricate the polymer mask. A low temperature ion coupled plasma with sulfur hexafluoride and oxygen was used to pattern transfer block copolymer structure to silicon with high selectivity (8:1) and fidelity. The silicon pattern was characterized by scanning electron microscopy and grazing incidence x-ray scattering. We also demonstrated fabrication of silicon nano-holes using polystyrene-b-polyethylene oxide (PS-b-PEO) using same methodology described above for PS-b-P2VP. Finally, we show such silicon nano-strucutre serves as excellent nano-imprint master template to pattern various functional materials like poly 3-hexylthiophene (P3HT).

Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

NARCIS (Netherlands)

Vermeer, Rolf; Berenschot, Johan W.; Sarajlic, Edin; Tas, Niels Roelof; Jansen, Henricus V.

In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using $\\langle$111$\\rangle$ silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom

Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

Science.gov (United States)

Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

2018-05-01

Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

Influence green sand system by core sand additions

Directory of Open Access Journals (Sweden)

N. Špirutová

2012-01-01

Full Text Available Today, about two thirds of iron alloys casting (especially for graphitizing alloys of iron are produced into green sand systems with usually organically bonded cores. Separation of core sands from the green sand mixture is very difficult, after pouring. The core sand concentration increase due to circulation of green sand mixture in a closed circulation system. Furthermore in some foundries, core sands have been adding to green sand systems as a replacement for new sands. The goal of this contribution is: “How the green sand systems are influenced by core sands?”This effect is considered by determination of selected technological properties and degree of green sand system re-bonding. From the studies, which have been published yet, there is not consistent opinion on influence of core sand dilution on green sand system properties. In order to simulation of the effect of core sands on the technological properties of green sands, there were applied the most common used technologies of cores production, which are based on bonding with phenolic resin. Core sand concentration added to green sand system, was up to 50 %. Influence of core sand dilution on basic properties of green sand systems was determined by evaluation of basic industrial properties: moisture, green compression strength and splitting strength, wet tensile strength, mixture stability against staling and physical-chemistry properties (pH, conductivity, and loss of ignition. Ratio of active betonite by Methylene blue test was also determined.

Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

Science.gov (United States)

Zaki, A. A.; El-Amin, A. A.

2017-12-01

In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

The Effect of Water Cement Ratio on Cement Brick Containing High Density Polyethylene (HDPE as Sand Replacement

Directory of Open Access Journals (Sweden)

Ali Noorwirdawati

2018-01-01

Full Text Available Waste disposal can contribute to the problem of environmental pollution. Most of the waste material is plastic based, because the nature of difficult of plastic degradable by itself. In order to overcome the problem, many study has been conducted on the reuse of plastic material into various field such as civil engineering and construction. In this study, municipal solid waste (MSW in the form of High Density Polyethylene (HDPE plastic was used to replace sand in cement sand brick production. The HDPE used in this study was obtained from a recycle factory at Nilai, Negeri Sembilan. 3% of HDPE replacement was applied in this study, with the cement-sand mix design of 1:6 and water-cement ratio 0.35, 0.40, 0.45 and 0.50 respectively. All specimens were tested for compressive strength and water absorption at 7 and 28 days. The density of the bricks was also recorded. The finding show that brick with 3% HDPE content and 0.45 of water-cement ratio at 28 days of age curing show the highest compressive strength, which is 19.5N/mm2 compared to the control specimen of 14.4 N/mm2.

Construction of large-thickness sand cushions for NPP foundations

International Nuclear Information System (INIS)

Krantsfel'd, Ya.L.; Losievskaya, I.K.; Kovalenko, R.P.; Mutalipov, A.

1982-01-01

A study is made on some technological peculiarities of preparation of NPP foundations and control methods of foundation density. As an example the experience of cement-sand foundation construction for two 900 MW power-units at the Koeberg South Africa NPP is briefly described. The experience of artificial foundation construction at this NPP indicates both the possibility of obtaining the required quality of cement-sand cushions and commercial construction of large volume of such cushions by acceptable rates and the necessity of unification of work quality characteristics

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Effect of calcium/silicon ratio on retention of uranium (VI) in portland cement materials

International Nuclear Information System (INIS)

Tan Hongbin; Li Yuxiang

2005-01-01

Calcium silicate hydrate (CSH) materials of varied calcium to silicon (Ca/Si) ratios were prepared by hydrothermal synthesis at 80 degree C, with calcium oxide and micro-silicon employed. These products were determined to be of gel phase by XRD. Leaching tests with 1% hydrochloric acid indicated that more Uranium (VI) was detained by CSH with lower Ca/Si ratios. Alkali-activated slag cement (with a lower Ca/Si ratio) was found to have a stronger retention capacity than Portland cement (with a higher Ca/Si ratio), at 25 degree C in 102-days leaching tests with simulated solidified forms containing Uranium (VI). The accumulative leaching fraction of Uranium (VI) for Alkali-activated slag cement solidified forms is 17.6% lower than that for Portland cement. The corresponding difference of diffusion coefficients is 40.6%. This could be correlated with the difference of Ca/Si ratios between cements of two kinds. (authors)

Influence of ceramic dental crown coating substrate thickness ratio on strain energy release rate

Science.gov (United States)

Khasnulhadi, K.; Daud, R.; Mat, F.; Noor, S. N. F. M.; Basaruddin, K. S.; Sulaiman, M. H.

2017-10-01

This paper presents the analysis of coating substrate thickness ratio effect on the crown coating fracture behaviour. The bi-layer material is examined under four point bending with pre-crack at the bottom of the core material by using finite element. Three different coating thickness of core/substrate was tested which is 1:1, 1:2 and 2:1. The fracture parameters are analysed based on bilayer and homogenous elastic interaction. The result shows that the ratio thickness of core/veneer provided a significant effect on energy release rate.

Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

Energy Technology Data Exchange (ETDEWEB)

Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B

2003-04-15

Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T{sub S}=450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal {beta}-MoSi{sub 2} could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet.

Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

International Nuclear Information System (INIS)

Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B.

2003-01-01

Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T S =450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal β-MoSi 2 could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet

Performance of composite sand cement brick containing recycle concrete aggregate and waste polyethylene terephthalate with different mix design ratio

Science.gov (United States)

Azmi, N. B.; Khalid, F. S.; Irwan, J. M.; Mazenan, P. N.; Zahir, Z.; Shahidan, S.

2018-04-01

This study is focuses to the performance of composite sand cement brick containing recycle concrete aggregate and waste polyethylene terephthalate. The objective is to determine the mechanical properties such as compressive strength and water absorption of composite brick containing recycled concrete aggregate and polyethylene terephthalate waste and to determine the optimum mix ratio of bricks containing recycled concrete aggregate and polyethylene terephthalate waste. The bricks specimens were prepared by using 100% natural sand, they were then replaced by RCA at 25%, 50% and 75% with proportions of PET consists of 1.0%, 1.5%, 2.0% and 2.5% by weight of natural sand. Based on the results of compressive strength, it indicates that the replacement of RCA shows an increasing strength as the strength starts to increase from 25% to 50% for both mix design ratio. The strength for RCA 75% volume of replacement started to decrease as the volume of PET increase. However, the result of water absorption with 50% RCA and 1.0% PET show less permeable compared to control brick at both mix design ratio. Thus, one would expect the density of brick decrease and the water absorption to increase as the RCA and PET content is increased.

A Visual Basic program to classify sediments based on gravel-sand-silt-clay ratios

Science.gov (United States)

Poppe, L.J.; Eliason, A.H.; Hastings, M.E.

2003-01-01

Nomenclature describing size distributions is important to geologists because grain size is the most basic attribute of sediments. Traditionally, geologists have divided sediments into four size fractions that include gravel, sand, silt, and clay, and classified these sediments based on ratios of the various proportions of the fractions. Definitions of these fractions have long been standardized to the grade scale described by Wentworth (1922), and two main classification schemes have been adopted to describe the approximate relationship between the size fractions.Specifically, according to the Wentworth grade scale gravel-sized particles have a nominal diameter of ⩾2.0 mm; sand-sized particles have nominal diameters from <2.0 mm to ⩾62.5 μm; silt-sized particles have nominal diameters from <62.5 to ⩾4.0 μm; and clay is <4.0 μm. As for sediment classification, most sedimentologists use one of the systems described either by Shepard (1954) or Folk (1954, 1974). The original scheme devised by Shepard (1954) utilized a single ternary diagram with sand, silt, and clay in the corners to graphically show the relative proportions among these three grades within a sample. This scheme, however, does not allow for sediments with significant amounts of gravel. Therefore, Shepard's classification scheme (Fig. 1) was subsequently modified by the addition of a second ternary diagram to account for the gravel fraction (Schlee, 1973). The system devised by Folk (1954, 1974) is also based on two triangular diagrams (Fig. 2), but it has 23 major categories, and uses the term mud (defined as silt plus clay). The patterns within the triangles of both systems differ, as does the emphasis placed on gravel. For example, in the system described by Shepard, gravelly sediments have more than 10% gravel; in Folk's system, slightly gravelly sediments have as little as 0.01% gravel. Folk's classification scheme stresses gravel because its concentration is a function of

Determining the thickness of aliphatic alcohol monolayers covalently attached to silicon oxide surfaces using angle-resolved X-ray photoelectron spectroscopy

Science.gov (United States)

Lee, Austin W. H.; Kim, Dongho; Gates, Byron D.

2018-04-01

The thickness of alcohol based monolayers on silicon oxide surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy (ARXPS). Advantages of using alcohols as building blocks for the formation of monolayers include their widespread availability, ease of handling, and stability against side reactions. Recent progress in microwave assisted reactions demonstrated the ease of forming uniform monolayers with alcohol based reagents. The studies shown herein provide a detailed investigation of the thickness of monolayers prepared from a series of aliphatic alcohols of different chain lengths. Monolayers of 1-butanol, 1-hexanol, 1-octanol, 1-decanol, and 1-dodecanol were each successfully formed through microwave assisted reactions and characterized by ARXPS techniques. The thickness of these monolayers consistently increased by ∼1.0 Å for every additional methylene (CH2) within the hydrocarbon chain of the reagents. Tilt angles of the molecules covalently attached to silicon oxide surfaces were estimated to be ∼35° for each type of reagent. These results were consistent with the observations reported for thiol based or silane based monolayers on either gold or silicon oxide surfaces, respectively. The results of this study also suggest that the alcohol based monolayers are uniform at a molecular level.

Analogy between electrochemical behaviour of thick silicon granular electrodes for lithium batteries and fine soils micromechanics

International Nuclear Information System (INIS)

Nguyen, B.P.N.; Gaubicher, J.; Lestriez, B.

2014-01-01

In this paper we study the influence of the distribution and the shape of the carbon conductive additives on the cyclability of thick silicon based composite electrodes. Results pinpoint the influence of carbon additives is not only to play on the electronic conductivity but also to play on the micromechanics (stress distribution) of the composite films. The lack of correlation between electrochemical performance and the macroscopic electronic conductivity of the pristine electrodes and the observation of repeated drops and jumps in capacity during cycling brought us to make an analogy between the silicon composite electrodes and cohesive granular materials such as fine soils media. Considering the collective mechanical behavior of a stack of silicon particles upon repeated volume variations shed a novel understanding to the electrochemical behavior of composite electrodes based on silicon and alloying materials and tells us how critically important is the design at the different scales (the particle, a few particles, the composite electrode, the cell) to engineer the mechanical stress and strain and improve cycle life

Estimating crustal thickness and Vp/Vs ratio with joint constraints of receiver function and gravity data

Science.gov (United States)

Shi, Lei; Guo, Lianghui; Ma, Yawei; Li, Yonghua; Wang, Weilai

2018-05-01

The technique of teleseismic receiver function H-κ stacking is popular for estimating the crustal thickness and Vp/Vs ratio. However, it has large uncertainty or ambiguity when the Moho multiples in receiver function are not easy to be identified. We present an improved technique to estimate the crustal thickness and Vp/Vs ratio by joint constraints of receiver function and gravity data. The complete Bouguer gravity anomalies, composed of the anomalies due to the relief of the Moho interface and the heterogeneous density distribution within the crust, are associated with the crustal thickness, density and Vp/Vs ratio. According to their relationship formulae presented by Lowry and Pérez-Gussinyé, we invert the complete Bouguer gravity anomalies by using a common algorithm of likelihood estimation to obtain the crustal thickness and Vp/Vs ratio, and then utilize them to constrain the receiver function H-κ stacking result. We verified the improved technique on three synthetic crustal models and evaluated the influence of selected parameters, the results of which demonstrated that the novel technique could reduce the ambiguity and enhance the accuracy of estimation. Real data test at two given stations in the NE margin of Tibetan Plateau illustrated that the improved technique provided reliable estimations of crustal thickness and Vp/Vs ratio.

Thick-shelled, grazer-protected diatoms decouple ocean carbon and silicon cycles in the iron-limited Antarctic Circumpolar Current

Science.gov (United States)

Assmy, Philipp; Smetacek, Victor; Montresor, Marina; Klaas, Christine; Henjes, Joachim; Strass, Volker H.; Arrieta, Jesús M.; Bathmann, Ulrich; Berg, Gry M.; Breitbarth, Eike; Cisewski, Boris; Friedrichs, Lars; Fuchs, Nike; Herndl, Gerhard J.; Jansen, Sandra; Krägefsky, Sören; Latasa, Mikel; Peeken, Ilka; Röttgers, Rüdiger; Scharek, Renate; Schüller, Susanne E.; Steigenberger, Sebastian; Webb, Adrian; Wolf-Gladrow, Dieter

2013-01-01

Diatoms of the iron-replete continental margins and North Atlantic are key exporters of organic carbon. In contrast, diatoms of the iron-limited Antarctic Circumpolar Current sequester silicon, but comparatively little carbon, in the underlying deep ocean and sediments. Because the Southern Ocean is the major hub of oceanic nutrient distribution, selective silicon sequestration there limits diatom blooms elsewhere and consequently the biotic carbon sequestration potential of the entire ocean. We investigated this paradox in an in situ iron fertilization experiment by comparing accumulation and sinking of diatom populations inside and outside the iron-fertilized patch over 5 wk. A bloom comprising various thin- and thick-shelled diatom species developed inside the patch despite the presence of large grazer populations. After the third week, most of the thinner-shelled diatom species underwent mass mortality, formed large, mucous aggregates, and sank out en masse (carbon sinkers). In contrast, thicker-shelled species, in particular Fragilariopsis kerguelensis, persisted in the surface layers, sank mainly empty shells continuously, and reduced silicate concentrations to similar levels both inside and outside the patch (silica sinkers). These patterns imply that thick-shelled, hence grazer-protected, diatom species evolved in response to heavy copepod grazing pressure in the presence of an abundant silicate supply. The ecology of these silica-sinking species decouples silicon and carbon cycles in the iron-limited Southern Ocean, whereas carbon-sinking species, when stimulated by iron fertilization, export more carbon per silicon. Our results suggest that large-scale iron fertilization of the silicate-rich Southern Ocean will not change silicon sequestration but will add carbon to the sinking silica flux. PMID:24248337

Sediment volume in the north polar sand seas of Mars

International Nuclear Information System (INIS)

Lancaster, N.; Greeley, R.

1990-01-01

Data from studies of the cross-sectional area of terrestrial transverse dunes have been combined with maps of dune morphometry derived from Viking orbiter images to generate new estimates of sediment thickness and dune sediment volume in the north polar sand seas of Mars. A relationship between dune spacing and equivalent sediment thickness (EST) was developed from field data on Namibian and North American dunes and was applied to data on dune spacing and dune cover measured on Viking orbiter images to generate maps of dune sediment thickness for Martian north polar sand seas. There are four major sand seas in the north polar region of Mars, covering an area of 6.8 x 10 5 km 2 . Equivalent sediment thickness ranges between 0.5 and 6.1 m with a mean of 1.8 m. The sand seas contain a total of 1158 km 3 of dune sediment, which may have been derived by erosion of polar layered deposits and concentrated in its present location by winds that change direction seasonally

Optimized aspect ratios of restrained thick-wall cylinders by virtue of Poisson's ratio selection. Part two: Temperature application

International Nuclear Information System (INIS)

Whitty, J.P.M.; Henderson, B.; Francis, J.

2011-01-01

Highlights: → Incontrovertible evidence is presented that thermal stresses in cylindrical components which include nuclear reactors and containment vessels are shown to be highly dependent on the Poisson's ratio of the materials. → The key novelty is concerned with the identification of a new potential thermal applications for negative Poisson's ratio (auxetic) materials; i.e. those that get fatter when they are stretched. → Negative Poisson's ratio (auxetic) materials exhibit lower thermal stress build-up than conventional positive Poisson's ratio materials, this conjecture being proven using thermal surface plots. - Abstract: Analytical and numerical modelling have been employed to show that the choice of Poisson's ratio is one of the principal design criteria in order to reduce thermal stress build-up in isotropic materials. The modelling procedures are all twofold; consisting of a solution to a steady-state heat conduction problem followed by a linear static solution. The models developed take the form of simplistic thick-wall cylinders such model systems are applicable at macro-structural and micro-structural levels as the underlining formulations are based on the classical theory of elasticity. Generally, the results show that the Poisson's ratio of the material has a greater effect on the magnitude of the principal stresses than the aspect ratio of the cylinders investigated. Constraining the outside of these models significantly increases the thermal stresses induced. The most significant and original finding presented is that the for both freely expanding and constrained thick-wall cylinders the optimum Poisson's ratio is minus unity.

Silicon isotope ratio measurements by inductively coupled plasma tandem mass spectrometry for alteration studies of nuclear waste glasses

Energy Technology Data Exchange (ETDEWEB)

Gourgiotis, Alkiviadis, E-mail: alkiviadis.gourgiotis@irsn.fr [Institut de Radioprotection et de Sûreté Nucléaire (IRSN), PRP-DGE/SRTG/LT2S, Fontenay-aux-Roses (France); Ducasse, Thomas [CEA, DEN, DTCD, SECM, F-30207 Bagnols-sur-Cèze (France); Barker, Evelyne [Institut de Radioprotection et de Sûreté Nucléaire (IRSN), PRP-DGE/SRTG/LT2S, Fontenay-aux-Roses (France); Jollivet, Patrick; Gin, Stéphane [CEA, DEN, DTCD, SECM, F-30207 Bagnols-sur-Cèze (France); Bassot, Sylvain; Cazala, Charlotte [Institut de Radioprotection et de Sûreté Nucléaire (IRSN), PRP-DGE/SRTG/LT2S, Fontenay-aux-Roses (France)

2017-02-15

High-level, long-lived nuclear waste arising from spent fuel reprocessing is vitrified in silicate glasses for final disposal in deep geologic formations. In order to better understand the mechanisms driving glass dissolution, glass alteration studies, based on silicon isotope ratio monitoring of {sup 29}Si-doped aqueous solutions, were carried out in laboratories. This work explores the capabilities of the new type of quadrupole-based ICP-MS, the Agilent 8800 tandem quadrupole ICP-MS/MS, for accurate silicon isotope ratio determination for alteration studies of nuclear waste glasses. In order to avoid silicon polyatomic interferences, a new analytical method was developed using O{sub 2} as the reaction gas in the Octopole Reaction System (ORS), and silicon isotopes were measured in mass-shift mode. A careful analysis of the potential polyatomic interferences on SiO{sup +} and SiO{sub 2}{sup +} ion species was performed, and we found that SiO{sup +} ion species suffer from important polyatomic interferences coming from the matrix of sample and standard solutions (0.5M HNO{sub 3}). For SiO{sub 2}{sup +}, no interferences were detected, and thus, these ion species were chosen for silicon isotope ratio determination. A number of key settings for accurate isotope ratio analysis like, detector dead time, integration time, number of sweeps, wait time offset, memory blank and instrumental mass fractionation, were considered and optimized. Particular attention was paid to the optimization of abundance sensitivity of the quadrupole mass filter before the ORS. We showed that poor abundance sensitivity leads to a significant shift of the data away from the Exponential Mass Fractionation Law (EMFL) due to the spectral overlaps of silicon isotopes combined with different oxygen isotopes (i.e. {sup 28}Si{sup 16}O{sup 18}O{sup +}, {sup 30}Si{sup 16}O{sup 16}O{sup +}). The developed method was validated by measuring a series of reference solutions with different {sup 29}Si

Horizontal drilling in Miocene thin sand of Lake Maracaibo

Energy Technology Data Exchange (ETDEWEB)

Partidas, C. [PDVSA Exploration and Production (Venezuela)

1998-12-31

Horizontal drilling in the mature Lake Maracaibo field in Venezuela as a means of stimulating production are discussed. The Miocene sand where the horizontal well technology was applied, presented a number of intervals of unconsolidated sand of varied continuity, pay intervals at ten to twenty feet thickness, and reservoir pressures mostly at hydrostatic or below hydrostatic values. This paper evaluates a horizontal drilling program in the Lagunallis Lago Production Unit of Maracaibo, involving 91 wells to date (since 1995). When assessed in economic terms, results indicate that horizontal wells are a better economic alternative than vertical wells. The same results also showed that drainage from thin sand reservoirs resulted in better production with horizontal well technology than production from vertical wells. Payout was less than two years for 50 per cent of the horizontal wells while 40 per cent had payouts of between two and four years. Profit to investment ratio was greater than two in the case of about 70 per cent of the horizontal wells drilled in 1996. 2 tabs., 10 figs.

Chloride accelerated test: influence of silica fume, water/binder ratio and concrete cover thickness

Directory of Open Access Journals (Sweden)

E. Pereira

Full Text Available In developed countries like the UK, France, Italy and Germany, it is estimated that spending on maintenance and repair is practically the same as investment in new constructions. Therefore, this paper aims to study different ways of interfering in the corrosion kinetic using an accelerated corrosion test - CAIM, that simulates the chloride attack. The three variables are: concrete cover thickness, use of silica fume and the water/binder ratio. It was found, by analysis of variance of the weight loss of the steel bars and chloride content in the concrete cover thickness, there is significant influence of the three variables. Also, the results indicate that the addition of silica fume is the path to improve the corrosion protection of low water/binder ratio concretes (like 0.4 and elevation of the concrete cover thickness is the most effective solution to increase protection of high water/binder ratio concrete (above 0.5.

Characterization of 10 μm thick porous silicon dioxide obtained by complex oxidation process for RF application

International Nuclear Information System (INIS)

Park, Jeong-Yong; Lee, Jong-Hyun

2003-01-01

This paper proposes a 10 μm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500 deg. C, for 1 h at H 2 O/O 2 ) and a rapid thermal oxidation (RTO) process (1050 deg. C, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 μm was about 100-500 pA in the range of 0-50 V. The average value of breakdown field was about 3.9 MV cm -1 . From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process were confirmed to be completely oxidized and also the role of RTO process was important for the densification of porous silicon layer (PSL) oxidized at a lower temperature. For the RF-test of Si substrate with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared by a temperature of 1050 deg. C (1 h at H 2 O/O 2 ). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz, which is similar to that of CPW on OPSL prepared by high temperature

A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques

International Nuclear Information System (INIS)

Yu-Feng, Guo; Zhi-Gong, Wang; Gene, Sheu; Jian-Bing, Cheng

2010-01-01

We present a new technique to achieve uniform lateral electric field and maximum breakdown voltage in lateral double-diffused metal-oxide-semiconductor transistors fabricated on silicon-on-insulator substrates. A linearly increasing drift-region thickness from the source to the drain is employed to improve the electric field distribution in the devices. Compared to the lateral linear doping technique and the reduced surface field technique, two-dimensional numerical simulations show that the new device exhibits reduced specific on-resistance, maximum off- and on-state breakdown voltages, superior quasi-saturation characteristics and improved safe operating area. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effects of varying the through silicon via liners thickness on their hoop stresses and deflections

Directory of Open Access Journals (Sweden)

Juma Mary Atieno

2017-03-01

Full Text Available Through silicon via (TSV interconnect reliability is a problem in electronic packaging. The authors address the insertion losses, deflections which can result to separation of TSV layers and hoop stresses. These problems are due to different coefficient of thermal expansion between materials. The authors propose a robust methodology for (TSV liners in this paper which in turn solves the reliability problem in (TSV. Silicon dioxide material is used in their paper as a TSV liner. First, they modelled the equivalent TSV circuit in advanced design systems (ADS. The authors then simulated it to obtain the TSV characterisation from which they obtained the S-parameter S21 which represents the insertion losses. Insertion losses have been described with changes in frequencies from 0 to 20 GHz with changes in TSV thickness from 7 to 8 µm. Later two different shapes of the TSV liner; the disc- and rod-shaped are modelled in analysis system 14 software. The two shapes with a radius of 5 µm each and a fixed pressure of 100 µPa developed changes in hoop stresses and deflections when the liners thicknesses are varied from 2 to 3 µm. The disc shape experienced least reliability problems so the authors propose its use in via structures.

[Effect of shifting sand burial on evaporation reduction and salt restraint under saline water irrigation in extremely arid region].

Science.gov (United States)

Zhang, Jian-Guo; Zhao, Ying; Xu, Xin-Wen; Lei, Jia-Qiang; Li, Sheng-Yu; Wang, Yong-Dong

2014-05-01

The Taklimakan Desert Highway Shelterbelt is drip-irrigated with high saline groundwater (2.58-29.70 g x L(-1)), and shifting sand burial and water-salt stress are most common and serious problems in this region. So it is of great importance to study the effect of shifting sand burial on soil moisture evaporation, salt accumulation and their distribution for water saving, salinity restraint, and suitable utilization of local land and water resources. In this study, Micro-Lysimeters (MLS) were used to investigate dynamics of soil moisture and salt under different thicknesses of sand burial (1, 2, 3, 4, and 5 cm), and field control experiments of drip-irrigation were also carried out to investigate soil moisture and salt distribution under different thicknesses of shifting sand burial (5, 10, 15, 20, 25, 30, 35, and 40 cm). The soil daily and cumulative evaporation decreased with the increase of sand burial thickness in MLS, cumulative evaporation decreased by 2.5%-13.7% compared with control. And evaporative inhibiting efficiency increased with sand burial thickness, evaporative inhibiting efficiency of 1-5 cm sand burial was 16.7%-79.0%. Final soil moisture content beneath the interface of sand burial increased with sand burial thickness, and it increased by 2.5%-13.7% than control. The topsoil EC of shifting sand in MLS decreased by 1.19-6.00 mS x cm(-1) with the increasing sand burial thickness, whereas soil salt content beneath the interface in MLS increased and amplitude of the topsoil salt content was higher than that of the subsoil. Under drip-irrigation with saline groundwater, average soil moisture beneath the interface of shifting sand burial increased by 0.4% -2.0% compare with control, and the highest value of EC was 7.77 mS x cm(-1) when the sand burial thickness was 10 cm. The trend of salt accumulation content at shifting sand surface increased firstly, and then decreased with the increasing sand burial thickness. Soil salt contents beneath the

Silicon isotope ratio measurements by inductively coupled plasma tandem mass spectrometry for alteration studies of nuclear waste glasses.

Science.gov (United States)

Gourgiotis, Alkiviadis; Ducasse, Thomas; Barker, Evelyne; Jollivet, Patrick; Gin, Stéphane; Bassot, Sylvain; Cazala, Charlotte

2017-02-15

High-level, long-lived nuclear waste arising from spent fuel reprocessing is vitrified in silicate glasses for final disposal in deep geologic formations. In order to better understand the mechanisms driving glass dissolution, glass alteration studies, based on silicon isotope ratio monitoring of 29 Si-doped aqueous solutions, were carried out in laboratories. This work explores the capabilities of the new type of quadrupole-based ICP-MS, the Agilent 8800 tandem quadrupole ICP-MS/MS, for accurate silicon isotope ratio determination for alteration studies of nuclear waste glasses. In order to avoid silicon polyatomic interferences, a new analytical method was developed using O 2 as the reaction gas in the Octopole Reaction System (ORS), and silicon isotopes were measured in mass-shift mode. A careful analysis of the potential polyatomic interferences on SiO + and SiO 2 + ion species was performed, and we found that SiO + ion species suffer from important polyatomic interferences coming from the matrix of sample and standard solutions (0.5M HNO 3 ). For SiO 2 + , no interferences were detected, and thus, these ion species were chosen for silicon isotope ratio determination. A number of key settings for accurate isotope ratio analysis like, detector dead time, integration time, number of sweeps, wait time offset, memory blank and instrumental mass fractionation, were considered and optimized. Particular attention was paid to the optimization of abundance sensitivity of the quadrupole mass filter before the ORS. We showed that poor abundance sensitivity leads to a significant shift of the data away from the Exponential Mass Fractionation Law (EMFL) due to the spectral overlaps of silicon isotopes combined with different oxygen isotopes (i.e. 28 Si 16 O 18 O + , 30 Si 16 O 16 O + ). The developed method was validated by measuring a series of reference solutions with different 29 Si enrichment. Isotope ratio trueness, uncertainty and repeatability were found to be

Effect of moulding sand on statistically controlled hybrid rapid casting solution for zinc alloys

Energy Technology Data Exchange (ETDEWEB)

Singh, Rupinder [Guru Nanak Dev Engineering College, Ludhiana (India)

2010-08-15

The purpose of the present investigations is to study the effect of moulding sand on decreasing shell wall thickness of mould cavities for economical and statistically controlled hybrid rapid casting solutions (combination of three dimensional printing and conventional sand casting) for zinc alloys. Starting from the identification of component/ benchmark, technological prototypes were produced at different shell wall thicknesses supported by three different types of sands (namely: dry, green and molasses). Prototypes prepared by the proposed process are for assembly check purpose and not for functional validation of the parts. The study suggested that a shell wall with a less than recommended thickness (12mm) is more suitable for dimensional accuracy. The best dimensional accuracy was obtained at 3mm shell wall thickness with green sand. The process was found to be under statistical control

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

International Nuclear Information System (INIS)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

2014-01-01

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

2014-11-10

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

Direct Chlorination of Zircon Sand

International Nuclear Information System (INIS)

Dwiretnani Sudjoko; Budi Sulistyo; Pristi Hartati; Sunardjo

2002-01-01

It was investigated the direct chlorination of zircon sand in a unit chlorination equipment. The process was in semi batch. The product gas was scrubbed in aqueous NaOH. It was search the influence of time, ratio of reactant and size of particle sand to the concentration of Zr and Si in the product. From these research it was found that as the times, ratio of reactant increased, the concentration of Zr increased, but the concentration of Si decreased, while as grain size of zircon sand decreased the concentration of Zr decreased, but the concentration of Si increased. (author)

Thick amorphous silicon layers suitable for the realization of radiation detectors

International Nuclear Information System (INIS)

Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyong-Koo; Perez-Mendez, V.; Petrova-Koch, V.

1995-04-01

Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH 4 at a substrate temperature ∼ 150 degree C and subsequent annealing at 160 degree C for about 100 hours. The stress in the films obtained this way decreased to ∼ 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 x 10 15 cm -3 to 7 x 10 14 cm -3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material

Dual-energy digital mammography: Calibration and inverse-mapping techniques to estimate calcification thickness and glandular-tissue ratio

International Nuclear Information System (INIS)

Kappadath, S. Cheenu; Shaw, Chris C.

2003-01-01

Breast cancer may manifest as microcalcifications in x-ray mammography. Small microcalcifications, essential to the early detection of breast cancer, are often obscured by overlapping tissue structures. Dual-energy imaging, where separate low- and high-energy images are acquired and synthesized to cancel the tissue structures, may improve the ability to detect and visualize microcalcifications. Transmission measurements at two different kVp values were made on breast-tissue-equivalent materials under narrow-beam geometry using an indirect flat-panel mammographic imager. The imaging scenario consisted of variable aluminum thickness (to simulate calcifications) and variable glandular ratio (defined as the ratio of the glandular-tissue thickness to the total tissue thickness) for a fixed total tissue thickness--the clinical situation of microcalcification imaging with varying tissue composition under breast compression. The coefficients of the inverse-mapping functions used to determine material composition from dual-energy measurements were calculated by a least-squares analysis. The linear function poorly modeled both the aluminum thickness and the glandular ratio. The inverse-mapping functions were found to vary as analytic functions of second (conic) or third (cubic) order. By comparing the model predictions with the calibration values, the root-mean-square residuals for both the cubic and the conic functions were ∼50 μm for the aluminum thickness and ∼0.05 for the glandular ratio

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

Science.gov (United States)

Krantz, Timothy Lewis

2013-01-01

The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

Split thickness skin graft meshing ratio indications and common practices.

Science.gov (United States)

Pripotnev, Stahs; Papp, Anthony

2017-12-01

Split thickness skin grafting is a commonly used technique in burn surgery for resurfacing wounds that are unlikely to heal without scarring. Meshing and expanding skin grafts allow for reconstruction of larger wounds with smaller donor sites. A retrospective chart review was performed of 210 patients with burns equal to or greater than 20% total body surface area admitted to Vancouver General Hospital between 1998 and 2014. Charts were reviewed to collect data on patient and burn demographics. A survey was sent to Canadian plastic surgeons registered with the CSPS to collect data on common practices in burn surgery nationwide. The patients that received 3:1 or higher meshed grafts were all flame burns, had a significantly higher average TBSA (51.89%±14.87 vs 29.13%±9.48, p=0.001), and a significantly higher full thickness burn TBSA (25.76%±21.97 vs 6.20%±9.04, p=0.001). We found no significant differences in gender, age, or burn location between the less than 2:1 and 3:1 or greater meshing ratio groups. The survey of plastic surgeons performing burn surgery in Canada revealed that 60% of responders had experience with skin grafts using meshing ratios of 3:1 or higher. Of these surgeons, 100% felt that burn size and 36% felt that burn location would influence their decision to use a 3:1 or higher meshing ratio. A larger burn size is the major influencing factor for the use of higher skin graft meshing ratios by Canadian burn surgeons. Furthermore, burn location determines the choice of donor and recipient sites in these cases. Copyright © 2017 Elsevier Ltd and ISBI. All rights reserved.

On Foundation Improvement By Sand Replacement | Abam | Global ...

African Journals Online (AJOL)

This paper describes a simple foundation improvement method involving the replacement of poor foundation bearing soils with sand and the resultant improvement in bearing capacity and the minimization of settlement at the site of a large storage tank. Minimum thickness of sand replacement for various foundation loads ...

Uncertainty evaluation of thickness and warp of a silicon wafer measured by a spectrally resolved interferometer

Science.gov (United States)

Praba Drijarkara, Agustinus; Gergiso Gebrie, Tadesse; Lee, Jae Yong; Kang, Chu-Shik

2018-06-01

Evaluation of uncertainty of thickness and gravity-compensated warp of a silicon wafer measured by a spectrally resolved interferometer is presented. The evaluation is performed in a rigorous manner, by analysing the propagation of uncertainty from the input quantities through all the steps of measurement functions, in accordance with the ISO Guide to the Expression of Uncertainty in Measurement. In the evaluation, correlation between input quantities as well as uncertainty attributed to thermal effect, which were not included in earlier publications, are taken into account. The temperature dependence of the group refractive index of silicon was found to be nonlinear and varies widely within a wafer and also between different wafers. The uncertainty evaluation described here can be applied to other spectral interferometry applications based on similar principles.

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

Science.gov (United States)

Matsuura, Hideharu

2015-04-01

High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm2, respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

Sand consolidation

Energy Technology Data Exchange (ETDEWEB)

Spain, H H

1965-01-21

In a sand consolidation method in which there is injected a mixture of resin-forming liquids comprising an aryl-hydroxy low molecular weight compound, a water- soluble aldehyde, and a catalyst, an improvement is claimed which comprises diluting the resin-forming liquids with a diluent and with water so that the yield of the resin is sufficient to consolidate the sand particles with the minimum desirable pressure. The diluent may be mutually soluble in water and in the resin-forming liquids, and does not affect the setting time of the polymer. The aldehyde and the aryl-hydroxy compound may be in ratio of 5:1, and the diluent, methyl alcohol, is present in a ratio of 2:1 with reference to the water.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar

2017-03-30

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2017-01-01

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

International Nuclear Information System (INIS)

Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.

2015-01-01

Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20–5000 μm) and cavity height (e.g., 200–1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25 000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al 2 O 3 and TiO 2 processes from Me 3 Al/H 2 O and TiCl 4 /H 2 O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes

Characterization of 150 $\\mu$m thick epitaxial silicon detectors from different producers after proton irradiation

CERN Document Server

Hoedlmoser, H; Haerkoenen, J; Kronberger, M; Trummer, J; Rodeghiero, P

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to ...

The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

1989-04-01

We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs

The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

International Nuclear Information System (INIS)

Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

1997-01-01

The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

International Nuclear Information System (INIS)

Semler, Matthew R.; Swenson, Orven F.; Hoey, Justin M.; Guruvenket, Srinivasan; Gette, Cody R.; Hobbie, Erik K.

2014-01-01

We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

Science.gov (United States)

Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

2013-05-01

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

[The effect of core veneer thickness ratio on the flexural strength of diatomite-based dental ceramic].

Science.gov (United States)

Jiang, Jie; Zhang, Xin; Gao, Mei-qin; Zhang, Fei-min; Lu, Xiao-li

2015-06-01

To evaluate the effect of different core veneer thickness ratios on the flexural strength and failure mode of bilayered diatomite-based dental ceramics. Diatomite-based dental ceramics blocks (16 mm×5.4 mm×1 mm) were sintered with different thickness of veneer porcelains: 0 mm (group A), 0.6 mm (group B), 0.8 mm (group C) and 1.0 mm (group D). Flexural strength was detected and scanning electron microscope was used to observe the interface microstructure. Statistical analysis was performed using SPSS 17.0 software package. With the increase of the thickness of the veneer porcelain, flexural strength of group C showed highest flexural strength up to (277.24±5.47) MPa. Different core veneer thickness ratios can significantly influence the flexural strength of bilayered diatomite-based dental ceramics. Supported by Science and Technology Projects of Nantong City (HS2013010).

Geophysics comes of age in oil sands development

Energy Technology Data Exchange (ETDEWEB)

Bauman, P. [WorleyParsons Komex, Calgary, AB (Canada); Birch, R.; Parker, D.; Andrews, B. [Calgary Univ., AB (Canada). Dept. of Geology and Geophysics

2008-07-01

This paper discussed geophysical techniques developed for oil sands exploration and production applications in Alberta's oil sands region. Geophysical methods are playing an important role in mine planning, tailings containment, water supply, and land reclamation activities. Geophysics techniques are used to estimate the volume of muskeg that needs to be stripped and stored for future reclamation activities as well as to site muskeg piles and delineate the thickness of clay Clearwater formations overlying Cretaceous oil-bearing sands. 2-D electrical resistivity mapping is used to map river-connected deep bedrock Pleistocene paleovalleys in the region. Geophysical studies are also used to investigate the interiors of dikes and berms as well as to monitor salt migration within tailings piles. Sonic and density logs are used to create synthetic seismograms for mapping the Devonian surface in the region. The new applications included the calculation of bitumen saturation from surface sands and shales; muskeg thickness mapping; and non-intrusive monitoring of leachate plumes. Geophysical techniques included 2-D electrical resistivity imaging; transient electromagnetic (EM) technologies; ground penetrating radar; and high-resolution seismic reflections. Polarization, surface nuclear magnetic resonance and push-probe sensing techniques were also discussed. Techniques were discussed in relation to Alberta's Athabasca oil sands deposits. 4 refs.

Controlled growth of carbon nanofibers using plasma enhanced chemical vapor deposition: Effect of catalyst thickness and gas ratio

International Nuclear Information System (INIS)

Saidin, M.A.R.; Ismail, A.F.; Sanip, S.M.; Goh, P.S.; Aziz, M.; Tanemura, M.

2012-01-01

The characteristics of carbon nanofibers (CNFs) grown, using direct current plasma enhanced chemical vapor deposition system reactor under various acetylene to ammonia gas ratios and different catalyst thicknesses were studied. Nickel/Chromium-glass (Ni/Cr-glass) thin film catalyst was employed for the growth of CNF. The grown CNFs were then characterized using Raman spectroscopy, field emission scanning electron microscopy and transmission electron microscopy (TEM). Raman spectroscopy showed that the Ni/Cr-glass with thickness of 15 nm and gas ratio acetylene to ammonia of 1:3 produced CNFs with the lowest I D /I G value (the relative intensity of D-band to G-band). This indicated that this catalyst thickness and gas ratio value is the optimum combination for the synthesis of CNFs under the conditions studied. TEM observation pointed out that the CNFs produced have 104 concentric walls and the residual catalyst particles were located inside the tubes of CNFs. It was also observed that structural morphology of the grown CNFs was influenced by acetylene to ammonia gas ratio and catalyst thickness.

Controlled growth of carbon nanofibers using plasma enhanced chemical vapor deposition: Effect of catalyst thickness and gas ratio

Energy Technology Data Exchange (ETDEWEB)

Saidin, M.A.R. [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Ismail, A.F., E-mail: afauzi@utm.my [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Sanip, S.M.; Goh, P.S.; Aziz, M. [Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Tanemura, M. [Department of Frontier Material, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2012-01-31

The characteristics of carbon nanofibers (CNFs) grown, using direct current plasma enhanced chemical vapor deposition system reactor under various acetylene to ammonia gas ratios and different catalyst thicknesses were studied. Nickel/Chromium-glass (Ni/Cr-glass) thin film catalyst was employed for the growth of CNF. The grown CNFs were then characterized using Raman spectroscopy, field emission scanning electron microscopy and transmission electron microscopy (TEM). Raman spectroscopy showed that the Ni/Cr-glass with thickness of 15 nm and gas ratio acetylene to ammonia of 1:3 produced CNFs with the lowest I{sub D}/I{sub G} value (the relative intensity of D-band to G-band). This indicated that this catalyst thickness and gas ratio value is the optimum combination for the synthesis of CNFs under the conditions studied. TEM observation pointed out that the CNFs produced have 104 concentric walls and the residual catalyst particles were located inside the tubes of CNFs. It was also observed that structural morphology of the grown CNFs was influenced by acetylene to ammonia gas ratio and catalyst thickness.

Study on hardness and microstructural characteristics of sand cast ...

Indian Academy of Sciences (India)

Administrator

casting in green sand molds at 690°C. The solution treatment has been performed at 500°C for 7 h and then ... that specimens were water quenched to obtain super satu- ... structure and (b) distribution of silicon platelets (grey) and fine.

Optimizing rib width to height and rib spacing to deck plate thickness ratios in orthotropic decks

Directory of Open Access Journals (Sweden)

Abdullah Fettahoglu

2016-12-01

Full Text Available Orthotropic decks are composed of deck plate, ribs, and cross-beams and are frequently used in industry to span long distances, due to their light structures and load carrying capacities. Trapezoidal ribs are broadly preferred as longitudinal stiffeners in design of orthotropic decks. They supply the required stiffness to the orthotropic deck in traffic direction. Trapezoidal ribs are chosen in industrial applications because of their high torsional and buckling rigidity, less material and welding needs. Rib width, height, spacing, thickness of deck plate are important parameters for designing of orthotropic decks. In the scope of this study, rib width to height and rib spacing to deck plate thickness ratios are assessed by means of the stresses developed under different ratios of these parameters. For this purpose a FE-model of orthotropic bridge is generated, which encompasses the entire bridge geometry and conforms to recommendations given in Eurocode 3 Part 2. Afterwards necessary FE-analyses are performed to reveal the stresses developed under different rib width to height and rib spacing to deck plate thickness ratios. Based on the results obtained in this study, recommendations regarding these ratios are provided for orthotropic steel decks occupying trapezoidal ribs.

Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

Energy Technology Data Exchange (ETDEWEB)

Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

1999-11-11

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

KAUST Repository

Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2017-01-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible

Topical adenosine increases thick hair ratio in Japanese men with androgenetic alopecia.

Science.gov (United States)

Watanabe, Y; Nagashima, T; Hanzawa, N; Ishino, A; Nakazawa, Y; Ogo, M; Iwabuchi, T; Tajima, M

2015-12-01

Hair thickness is more important than hair density in the appearance of baldness in male with androgenetic alopecia (AGA). Adenosine improves hair loss by stimulating hair growth and by thickening hair shafts in women. The objective of this study was to evaluate the hair growth efficacy and safety of topical adenosine in men with AGA. A lotion containing either adenosine or niacinamide was administered to the scalps of 102 Japanese men twice daily for 6 months in a double-blind, randomized study. Efficacy was evaluated by dermatologists who assessed the quality of the hair and by calculating the percentages of vellus-like and thick hairs among the vertex hairs, as well as hair density. Adenosine was significantly (P < 0.05) superior to niacinamide in terms of global improvement of AGA, increase in the percentage of thick hairs (at least 60 μm) and self-assessment of hair thickness by the study participants. No causal adverse event due to the adenosine lotion was observed. These data indicate that adenosine increases thick hair ratio in Japanese men with AGA, and this compound is useful for the improvement of AGA. © 2015 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

Study by the Prandtl-Glauert method of compressibility effects and critical Mach number for ellipsoids of various aspect ratios and thickness ratios

Science.gov (United States)

Hess, Robert V; Gardner, Clifford S

1947-01-01

By using the Prandtl-Glauert method that is valid for three-dimensional flow problems, the value of the maximum incremental velocity for compressible flow about thin ellipsoids at zero angle of attack is calculated as a function of the Mach number for various aspect ratios and thickness ratios. The critical Mach numbers of the various ellipsoids are also determined. The results indicate an increase in critical Mach number with decrease in aspect ratio which is large enough to explain experimental results on low-aspect-ratio wings at zero lift.

Material parameters in a thick hydrogenated amorphous silicon detector and their effect on signal collection

International Nuclear Information System (INIS)

Qureshi, S.; Perez-Mendez, V.; Kaplan, S.N.; Fujieda, I.; Cho, G.; Street, R.A.

1989-04-01

Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (/approximately/30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential. 8 refs., 4 figs., 1 tab

Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

CERN Document Server

Despeisse, M; Commichau, S C; Dissertori, G; Garrigos, A; Jarron, P; Miazza, C; Moraes, D; Shah, A; Wyrsch, N; Viertel, Gert M; 10.1016/j.nima.2003.11.022

2004-01-01

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.

High aspect ratio titanium nitride trench structures as plasmonic biosensor

DEFF Research Database (Denmark)

Shkondin, Evgeniy; Repän, Taavi; Takayama, Osamu

2017-01-01

High aspect ratio titanium nitride (TiN) grating structures are fabricated by the combination of deep reactive ion etching (DRIE) and atomic layer deposition (ALD) techniques. TiN is deposited at 500 ◦C on a silicon trench template. Silicon between vertical TiN layers is selectively etched...... to fabricate the high aspect ratio TiN trenches with the pitch of 400 nm and height of around 2.7 µm. Dielectric functions of TiN films with different thicknesses of 18 - 105 nm and post-annealing temperatures of 700 - 900 ◦C are characterized by an ellipsometer. We found that the highest annealing temperature...... of 900 ◦C gives the most pronounced plasmonic behavior with the highest plasma frequency, ωp = 2.53 eV (λp = 490 nm). Such high aspect ratio trench structures function as a plasmonic grating sensor that supports the Rayleigh-Woods anomalies (RWAs), enabling the measurement of changes in the refractive...

MEMS-based thick film PZT vibrational energy harvester

DEFF Research Database (Denmark)

Lei, Anders; Xu, Ruichao; Thyssen, Anders

2011-01-01

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

Photoconduction in silicon rich oxide films

Energy Technology Data Exchange (ETDEWEB)

Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

2009-05-01

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

New results on silicon microstrip detectors of CMS tracker

International Nuclear Information System (INIS)

Demaria, N.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bolla, G.; Bosi, F.; Borrello, L.; Bortoletto, D.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Favro, G.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Li Yahong; Watts, S.; Wittmer, B.

2000-01-01

Interstrip and backplane capacitances on silicon microstrip detectors with p + strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x10 14 protons/cm 2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability

Design optimization of a breast imaging system based on silicon microstrip detectors

International Nuclear Information System (INIS)

Stres, S.; Mikuz, M.

2000-01-01

A mammographic imaging set-up using silicon microstrip detectors in edge-on geometry was simulated using the GEANT package. Deposited energy in tissue of various thicknesses was evaluated and shown to agree to within 10% with reference calculations. Optimal energies as well as spectra for mammography with silicon detectors were determined by maximizing the figure of merit of a realistic imaging set-up. The scattered to primary radiation ratio was studied for various detector geometries. It was found that fan-shaped detectors are needed to maintain the image quality for divergent photon beams. (author)

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

KAUST Repository

Ghoneim, Mohamed T.

2017-02-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

[Effect of core: dentin thickness ratio on the flexure strength of IPS Empress II heat-pressed all-ceramic restorative material].

Science.gov (United States)

Liu, Yi-hong; Feng, Hai-lan; Bao, Yi-wang; Qiu, Yan

2007-02-18

To evaluate the effect of core:dentin thickness ratio on the flexure strength, fracture mode and origin of bilayered IPS Empress II ceramic composite specimens. IPS Empress II core ceramic, dentin porcelain and bilayered composite specimens with core:dentin thickness ratio of 2:1 and 1:1 were tested in three-point flexure strength. Mean strengths and standard deviations were determined. The optical microscopy was employed for identification of the fracture mode and origin. The flexure strength of dentin porcelain was the smallest(62.7 MPa), and the strength of bilayered composite specimens was smaller than single-layered core ceramic(190.2 MPa). The core: dentin ratio did not influence the strength of bilayered composite specimens. The frequency of occurrence of bilayered specimen delaminations was higher in the group of core: dentin thickness ratio of 1:1 than in the group of 2:1. IPS Empress II core ceramic was significantly stronger than veneering dentin porcelain. Core:dentin thickness ratio could significantly influence the fracture mode and origin, and bilayered IPS Empress II ceramic composite specimens showed little influence in the fracture strength.

Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

Science.gov (United States)

Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

2015-09-07

Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bacterial nitrogen fixation in sand bioreactors treating winery wastewater with a high carbon to nitrogen ratio.

Science.gov (United States)

Welz, Pamela J; Ramond, Jean-Baptiste; Braun, Lorenz; Vikram, Surendra; Le Roes-Hill, Marilize

2018-02-01

Heterotrophic bacteria proliferate in organic-rich environments and systems containing sufficient essential nutrients. Nitrogen, phosphorus and potassium are the nutrients required in the highest concentrations. The ratio of carbon to nitrogen is an important consideration for wastewater bioremediation because insufficient nitrogen may result in decreased treatment efficiency. It has been shown that during the treatment of effluent from the pulp and paper industry, bacterial nitrogen fixation can supplement the nitrogen requirements of suspended growth systems. This study was conducted using physicochemical analyses and culture-dependent and -independent techniques to ascertain whether nitrogen-fixing bacteria were selected in biological sand filters used to treat synthetic winery wastewater with a high carbon to nitrogen ratio (193:1). The systems performed well, with the influent COD of 1351 mg/L being reduced by 84-89%. It was shown that the nitrogen fixing bacterial population was influenced by the presence of synthetic winery effluent in the surface layers of the biological sand filters, but not in the deeper layers. It was hypothesised that this was due to the greater availability of atmospheric nitrogen at the surface. The numbers of culture-able nitrogen-fixing bacteria, including presumptive Azotobacter spp. exhibited 1-2 log increases at the surface. The results of this study confirm that nitrogen fixation is an important mechanism to be considered during treatment of high carbon to nitrogen wastewater. If biological treatment systems can be operated to stimulate this phenomenon, it may obviate the need for nitrogen addition. Copyright © 2017 Elsevier Ltd. All rights reserved.

Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

International Nuclear Information System (INIS)

Despeisse, M.; Anelli, G.; Commichau, S.; Dissertori, G.; Garrigos, A.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, A.; Wyrsch, N.; Viertel, G.

2004-01-01

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed

Methods of optimising ion beam induced charge collection of polycrystalline silicon photovoltaic cells

International Nuclear Information System (INIS)

Witham, L.C.G.; Jamieson, D.N.; Bardos, R.A.

1998-01-01

Ion Beam Induced Charge (IBIC) is a valuable method for the mapping of charge carrier transport and recombination in silicon solar cells. However performing IBIC analysis of polycrystalline silicon solar cells is problematic in a manner unlike previous uses of IBIC on silicon-based electronic devices. Typical solar cells have a surface area of several square centimeters and a p-n junction thickness of only few microns. This means the cell has a large junction capacitance in the many nanoFarads range which leads to a large amount of noise on the preamplifier inputs which typically swamps the transient IBIC signal. The normal method of improving the signal-to-noise (S/N) ratio by biasing the junction is impractical for these cells as the low-quality silicon used leads to a large leakage current across the device. We present several experimental techniques which improve the S/N ratio which when used together should make IBIC analysis of many low crystalline quality devices a viable and reliable procedure. (authors)

Correlation between central corneal thickness and visual field defects, cup to disc ratio and retinal nerve fiber layer thickness in primary open angle glaucoma patients.

Science.gov (United States)

Sarfraz, Muhammad Haroon; Mehboob, Mohammad Asim; Haq, Rana Intisar Ul

2017-01-01

To evaluate the correlation between Central Corneal Thickness (CCT) and Visual Field (VF) defect parameters like Mean Deviation (MD) and Pattern Standard Deviation (PSD), Cup-to-Disc Ratio (CDR) and Retinal Nerve Fibre Layer Thickness (RNFL-T) in Primary Open-Angle Glaucoma (POAG) patients. This cross sectional study was conducted at Armed Forces Institute of Ophthalmology (AFIO), Rawalpindi from September 2015 to September 2016. Sixty eyes of 30 patients with diagnosed POAG were analysed. Correlation of CCT with other variables was studied. Mean age of study population was 43.13±7.54 years. Out of 30 patients, 19 (63.33%) were males and 11 (36.67%) were females. Mean CCT, MD, PSD, CDR and RNFL-T of study population was 528.57±25.47µm, -9.11±3.07, 6.93±2.73, 0.63±0.13 and 77.79±10.44µm respectively. There was significant correlation of CCT with MD, PSD and CDR (r=-0.52, pfield parameters like mean deviation and pattern standard deviation, as well as with cup-to-disc ratio. However, central corneal thickness had no significant relationship with retinal nerve fibre layer thickness.

Optimization of HNA etching parameters to produce high aspect ratio solid silicon microneedles

International Nuclear Information System (INIS)

Hamzah, A A; Yeop Majlis, B; Yunas, J; Dee, C F; Abd Aziz, N; Bais, B

2012-01-01

High aspect ratio solid silicon microneedles with a concave conic shape were fabricated. Hydrofluoric acid–nitric acid–acetic acid (HNA) etching parameters were characterized and optimized to produce microneedles that have long and narrow bodies with smooth surfaces, suitable for transdermal drug delivery applications. The etching parameters were characterized by varying the HNA composition, the optical mask's window size, the etching temperature and bath agitation. An L9 orthogonal Taguchi experiment with three factors, each having three levels, was utilized to determine the optimal fabrication parameters. Isoetch contours for HNA composition with 0% and 10% acetic acid concentrations were presented and a high nitric acid region was identified to produce microneedles with smooth surfaces. It is observed that an increase in window size indiscriminately increases the etch rate in both the vertical and lateral directions, while an increase in etching temperature beyond 35 °C causes the etching to become rapid and uncontrollable. Bath agitation and sample placement could be manipulated to achieve a higher vertical etch rate compared to its lateral counterpart in order to construct high aspect ratio microneedles. The Taguchi experiment performed suggests that a HNA composition of 2:7:1 (HF:HNO 3 :CH 3 COOH), window size of 500 µm and agitation rate of 450 RPM are optimal. Solid silicon microneedles with an average height of 159.4 µm, an average base width of 110.9 µm, an aspect ratio of 1.44, and a tip angle and diameter of 19.2° and 0.38 µm respectively were successfully fabricated. (paper)

X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

International Nuclear Information System (INIS)

Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

1998-01-01

The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

Synthesis, Characterization and Optical Constants of Silicon Oxycarbide

Directory of Open Access Journals (Sweden)

Memon Faisal Ahmed

2017-01-01

Full Text Available High refractive index glasses are preferred in integrated photonics applications to realize higher integration scale of passive devices. With a refractive index that can be tuned between SiO2 (1.45 and a-SiC (3.2, silicon oxycarbide SiOC offers this flexibility. In the present work, silicon oxycarbide thin films from 0.1 – 2.0 μm thickness are synthesized by reactive radio frequency magnetron sputtering a silicon carbide SiC target in a controlled argon and oxygen environment. The refractive index n and material extinction coefficient k of the silicon oxycarbide films are acquired with variable angle spectroscopic ellipsometry over the UV-Vis-NIR wavelength range. Keeping argon and oxygen gases in the constant ratio, the refractive index n is found in the range from 1.41 to 1.93 at 600 nm which is almost linearly dependent on RF power of sputtering. The material extinction coefficient k has been estimated to be less than 10-4 for the deposited silicon oxycarbide films in the visible and near-infrared wavelength regions. Morphological and structural characterizations with SEM and XRD confirms the amorphous phase of the SiOC films.

Damage evolution analysis in mortar, during compressive loading using acoustic emission and X-ray tomography: Effects of the sand/cement ratio

International Nuclear Information System (INIS)

Elaqra, H.; Godin, N.; Peix, G.; R'Mili, M.; Fantozzi, G.

2007-01-01

This paper explores the use of acoustic emission (AE) and X-ray tomography to identify the mechanisms of damage and the fracture process during compressive loading on concrete specimens. Three-dimensional (3D) X-ray tomography image analysis was used to observe defects of virgin mortar specimen under different compressive loads. Cumulative AE events were used to evaluate damage process in real time according to the sand/cement ratio. This work shows that AE and X-ray tomography are complementary nondestructive methods to measure, characterise and locate damage sites in mortar. The effect of the sand proportion on damage and fracture behaviour is studied, in relation with the microstructure of the material

Minimum ionizing particle detection using amorphous silicon diodes

Energy Technology Data Exchange (ETDEWEB)

Xi, J.; Hollingsworth, R.E.; Buitrago, R.H. (Glasstech Solar, Inc., Wheat Ridge, CO (USA)); Oakley, D.; Cumalat, J.P.; Nauenberg, U. (Colorado Univ., Boulder (USA). Dept. of Physics); McNeil, J.A. (Colorado School of Mines, Golden (USA). Dept. of Physics); Anderson, D.F. (Fermi National Accelerator Lab., Batavia, IL (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

1991-03-01

Hydrogenated amorphous silicon pin diodes have been used to detect minimum ionizing electrons with a pulse height signal-to-noise ratio exceeding 3. A distinct signal was seen for shaping times from 100 to 3000 ns. The devices used had a 54 {mu}m thick intrinsic layer and an active area of 0.1 cm{sup 2}. The maximum signal was 3200 electrons with a noise width of 950 electrons for a shaping time of 250 ns. (orig.).

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Retinal Layers Measurements following Silicone Oil Tamponade for Retinal Detachment Surgery.

Science.gov (United States)

Jurišić, Darija; Geber, Mia Zorić; Ćavar, Ivan; Utrobičić, Dobrila Karlica

2017-12-19

This study aimed to investigate the influence of silicone oil on the retinal nerve fiber layer (RNFL) thickness in patients with primary rhegmatogenous retinal detachment who underwent vitreoretinal surgery. The study included 47 patients (eyes), who underwent a pars plana vitrectomy with the silicone oil tamponade. The control group included unoperated eye of all participants. Spectral-domain optical coherence tomography (SD-OCT) was used for the measurements of peripapilar and macular RNFL thickness. The average peripapillary RNFL thickness was significantly higher in the silicone oil filled eyes during endotamponade and after its removal. The eyes with elevated IOP had less thickening of the RNFL in comparison to the eyes with normal IOP. Central macular thickness and macular volume were decreased in the silicone oil filled eyes in comparison to the control eyes. In conclusion, silicone oil caused peripapilar RNFL thickening in the vitrectomized eyes during endotamponade and after silicone oil removal.

Improving the geotechnical behavior of sand through cohesive admixtures

Directory of Open Access Journals (Sweden)

Mohie eldin Mohamed Afify Elmashad

2018-04-01

Full Text Available Irrigation projects in Egypt have been facing tremendous challenges, mostly is the scarcity of irrigation water. The current research presents the effect of different cohesive admixture on the conductivity of siliceous sand in general and its other geotechnical properties. Two different types of conventional swelling clay from (Toshka, 6th of October as well as bentonite were used to construct the irrigation canals and embankment. The results indicated that increase in the plasticity properties of the treated soil also decrease the permeability and infiltration. Moreover, the dry density of 2.08 t/m3 was obtained from sand and 20% 6th of October mixture, also the CBR of 31.20% were obtained from sand and 8% 6th of October mixture. Increasing the bentonite ratio increases the cohesion and decreasing the permeability. The swelling ratios of sand 6th of October Clay mixture is equal to 0.28%, and the fictitious stress at which the swelling ratio is nil, is equal to 16 kPa. Keywords: Sand, Swelling clay, Bentonite, Compaction test, Consolidation test, Triaxial test

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Apparent temperature versus true temperature of silicon crystals as a function of their thickness using infrared measurements

International Nuclear Information System (INIS)

Smither, R.K.; Fernandez, P.B.

1993-01-01

The very high intensity x-ray beams that will be present at the Advanced Photon Source and other third generation synchrotron sources will require that the first optical element in the beamline and, possibly, the second optical element as well, be cooled to remove the heat deposited by the x-ray beam. In many of the beamlines this heat will be in the 1 to 5 kW range, and any failure of the cooling system will require a quick response from safety control circuits to shut off the beam before damage is done to the optical element. In many cases, this first optical element will be a silicon diffraction crystal. Viewing the surface of objects subjected to high heat fluxes with an infrared camera or infrared sensor has proved to be a very effective method for monitoring the magnitude and distribution of surface temperatures on the object. This approach has been quite useful in studies of cooling silicon crystals in monochromators subject to high heat loads. The main drawback to this method is that single crystals of silicon are partially transparent to the infrared radiation monitored in most infrared cameras. This means that the infrared radiation emitted from the surface contains a component that comes from the interior of the crystal and that the intensity of the emitted radiation and thus the apparent temperature of the surface of the crystal depends on the thickness of the crystal and the kind of coating on the back (and/or the front) of the crystal. The apparent temperature of the crystal increases as the crystal is made thicker. A series of experiments were performed at Argonne National Laboratory to calibrate the apparent surface temperature of the crystal as measured with an infrared camera as a function of the crystal thickness and the type of coating (if any) on the back side of the crystal. A number of examples are given for data taken in synchrotron experiments with high intensity x-ray beams

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

International Nuclear Information System (INIS)

Liu, Zuwei; Sassolini, Simone; Olynick, Deirdre L; Gu, Xiaodan; Hwu, Justin

2014-01-01

The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature’s shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide. (paper)

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.

Science.gov (United States)

Ghoneim, Mohamed Tarek; Hussain, Muhammad Mustafa

2017-04-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dielectric and Piezoelectric Properties of PZT Composite Thick Films with Variable Solution to Powder Ratios.

Science.gov (United States)

Wu, Dawei; Zhou, Qifa; Shung, Koping Kirk; Bharadwaja, Srowthi N; Zhang, Dongshe; Zheng, Haixing

2009-05-08

The use of PZT films in sliver-mode high-frequency ultrasonic transducers applications requires thick, dense, and crack-free films with excellent piezoelectric and dielectric properties. In this work, PZT composite solutions were used to deposit PZT films >10 μm in thickness. It was found that the functional properties depend strongly on the mass ratio of PZT sol-gel solution to PZT powder in the composite solution. Both the remanent polarization, P(r), and transverse piezoelectric coefficient, e(31,) (f), increase with increasing proportion of the sol-gel solution in the precursor. Films prepared using a solution-to-powder mass ratio of 0.5 have a remanent polarization of 8 μC/cm(2), a dielectric constant of 450 (at 1 kHz), and e(31,) (f) = -2.8 C/m(2). Increasing the solution-to-powder mass ratio to 6, the films were found to have remanent polarizations as large as 37 μC/cm(2), a dielectric constant of 1250 (at 1 kHz) and e(31,) (f) = -5.8 C/m(2).

Study of effects of radiation on silicone prostheses

International Nuclear Information System (INIS)

Shedbalkar, A.R.; Devata, A.; Padanilam, T.

1980-01-01

Radiation effects on silicone gel and dose distribution of radiation through mammary prostheses were studied. Silicone gel behaves like tissue. Half value thickness for silicone gel and water are almost the same. Linear absorption coefficient for silicone gel and water are comparable

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Spatial variation in deposition rate coefficients of an adhesion-deficient bacterial strain in quartz sand.

Science.gov (United States)

Tong, Meiping; Camesano, Terri A; Johnson, William P

2005-05-15

The transport of bacterial strain DA001 was examined in packed quartz sand under a variety of environmentally relevant ionic strength and flow conditions. Under all conditions, the retained bacterial concentrations decreased with distance from the column inlet at a rate that was faster than loglinear, indicating that the deposition rate coefficient decreased with increasing transport distance. The hyperexponential retained profile contrasted againstthe nonmonotonic retained profiles that had been previously observed for this same bacterial strain in glass bead porous media, demonstrating that the form of deviation from log-linear behavior is highly sensitive to system conditions. The deposition rate constants in quartz sand were orders of magnitude below those expected from filtration theory, even in the absence of electrostatic energy barriers. The degree of hyperexponential deviation of the retained profiles from loglinear behavior did not decrease with increasing ionic strength in quartz sand. These observations demonstrate thatthe observed low adhesion and deviation from log-linear behavior was not driven by electrostatic repulsion. Measurements of the interaction forces between DA001 cells and the silicon nitride tip of an atomic force microscope (AFM) showed that the bacterium possesses surface polymers with an average equilibrium length of 59.8 nm. AFM adhesion force measurements revealed low adhesion affinities between silicon nitride and DA001 polymers with approximately 95% of adhesion forces having magnitudes responsible for the low adhesion to silicon nitride, indicating that steric interactions from extracellular polymers controlled DA001 adhesion deficiency and deviation from log-linear behavior on quartz sand.

Tensile test of a silicon microstructure fully coated with submicrometer-thick diamond like carbon film using plasma enhanced chemical vapor deposition method

Science.gov (United States)

Zhang, Wenlei; Uesugi, Akio; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

2017-06-01

This paper reports the tensile properties of single-crystal silicon (SCS) microstructures fully coated with sub-micrometer thick diamond like carbon (DLC) film using plasma enhanced chemical vapor deposition (PECVD). To minimize the deformations or damages caused by non-uniform coating of DLC, which has high compression residual stress, released SCS specimens with the dimensions of 120 µm long, 4 µm wide, and 5 µm thick were coated from the top and bottom side simultaneously. The thickness of DLC coating is around 150 nm and three different bias voltages were used for deposition. The tensile strength improved from 13.4 to 53.5% with the increasing of negative bias voltage. In addition, the deviation in strength also reduced significantly compared to bare SCS sample.

A combined CFD-experimental method for developing an erosion equation for both gas-sand and liquid-sand flows

Science.gov (United States)

Mansouri, Amir

The surface degradation of equipment due to consecutive impacts of abrasive particles carried by fluid flow is called solid particle erosion. Solid particle erosion occurs in many industries including oil and gas. In order to prevent abrupt failures and costly repairs, it is essential to predict the erosion rate and identify the locations of the equipment that are mostly at risk. Computational Fluid Dynamics (CFD) is a powerful tool for predicting the erosion rate. Erosion prediction using CFD analysis includes three steps: (1) obtaining flow solution, (2) particle tracking and calculating the particle impact speed and angle, and (3) relating the particle impact information to mass loss of material through an erosion equation. Erosion equations are commonly generated using dry impingement jet tests (sand-air), since the particle impact speed and angle are assumed not to deviate from conditions in the jet. However, in slurry flows, a wide range of particle impact speeds and angles are produced in a single slurry jet test with liquid and sand particles. In this study, a novel and combined CFD/experimental method for developing an erosion equation in slurry flows is presented. In this method, a CFD analysis is used to characterize the particle impact speed, angle, and impact rate at specific locations on the test sample. Then, the particle impact data are related to the measured erosion depth to achieve an erosion equation from submerged testing. Traditionally, it was assumed that the erosion equation developed based on gas testing can be used for both gas-sand and liquid-sand flows. The erosion equations developed in this work were implemented in a CFD code, and CFD predictions were validated for various test conditions. It was shown that the erosion equation developed based on slurry tests can significantly improve the local thickness loss prediction in slurry flows. Finally, a generalized erosion equation is proposed which can be used to predict the erosion rate in

Effect of core/veneer thickness ratio and veneer translucency on absolute and relative translucency of CAD-On restorations

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Mennatallah Mohie el-Din Wahba, (BDS, MSc

2017-06-01

Conclusions: Only veneer translucency had significant effect over contrast ratio values, while on the other hand, absolute translucency values were significantly affected by the core/veneer thickness ratio, veneer translucency and interaction between them. It was clear that absolute translucency measurements showed higher translucency values for the restorations than contrast ratio measurements.

Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

International Nuclear Information System (INIS)

Hezel, R.; Streb, W.

1985-01-01

Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots

Science.gov (United States)

Mok, Tat M.; O'Leary, Stephen K.

2007-12-01

Using a model for the optical spectrum associated with hydrogenated amorphous silicon, explicitly taking into account fundamental experimental limitations encountered, we theoretically determine the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film. We compare these results with that obtained from experiment. We find that the curvature in the Tauc plot plays a significant role in influencing the determination of the Tauc optical gap associated with hydrogenated amorphous silicon, thus affirming an earlier hypothesis of Cody et al. We also find that the spectral dependence of the refractive index plays an important role in influencing the determination of the Cody optical gap. It is thus clear that care must be exercised when drawing conclusions from the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film.

Three-dimensional analysis for piled raft machine foundation embedded in sand

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Mahmood Mahmood

2018-01-01

Full Text Available Three-dimensional analysis for the dynamic response of a piled raft foundation subjected to vertical vibration is presented in this study. The analysis considers several factors affecting the amplitude of displacement for deep foundation such as pile cap embedment, pile cap thickness, relative density of the sand and the boundary effect. A validation for an experimental piled raft model depending on a scale factor of (20 using at (Plaxis 3D computer program was performed. The sand is simulated using Mohr-Coloumb model while the concrete is simulated as linear elastic material. It has been found that embedding the pile cap in the soil and increasing its thickness lead to decrease the maximum amplitude of displacement. Furthermore, the predictions showed that increasing the distance between the foundation and the boundaries and increasing the relative density of the sand can significantly minimize the dynamic response of the foundation.

Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

Science.gov (United States)

Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

2015-05-01

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

Effective Laboratory Method of Chromite Content Estimation in Reclaimed Sands

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Ignaszak Z.

2016-09-01

Full Text Available The paper presents an original method of measuring the actual chromite content in the circulating moulding sand of foundry. This type of material is applied for production of moulds. This is the case of foundry which most frequently perform heavy casting in which for the construction of chemical hardening mould is used, both the quartz sand and chromite sand. After the dry reclamation of used moulding sand, both types of sands are mixed in various ratios resulting that in reclaimed sand silos, the layers of varying content of chromite in mixture are observed. For chromite recuperation from the circulating moulding sand there are applied the appropriate installations equipped with separate elements generating locally strong magnetic field. The knowledge of the current ratio of chromite and quartz sand allows to optimize the settings of installation and control of the separation efficiency. The arduous and time-consuming method of determining the content of chromite using bromoform liquid requires operational powers and precautions during using this toxic liquid. It was developed and tested the new, uncomplicated gravimetric laboratory method using powerful permanent magnets (neodymium. The method is used in the production conditions of casting for current inspection of chromite quantity in used sand in reclamation plant.

Calibration of the apparent temperature of silicon single crystals as a function of their true temperature and their thickness as determined by infrared measurements

International Nuclear Information System (INIS)

Smither, R.K.; Fernandez, P.B.

1993-09-01

Viewing the surface of objects subjected to high heat fluxes with an infrared camera or infrared sensor has proved to be a very effective method for monitoring the magnitude and distribution of surface temperature on the object. This approach has been quite useful in studies of cooling silicon crystals in monochromators subject to high heat loads. The main drawback to this method is that single crystals of silicon are partially transparent to the infrared radiation monitored in most infrared cameras. This means that the infrared radiation emitted from the surface contains a component that comes from the interior of the crystal and that the intensity of the emitted radiation and thus the apparent temperature of the surface of the crystal depends on the thickness of the crystal and the kind of coating on the back (and/or the front) of the crystal. The apparent temperature of the crystal increases as the crystal is made thicker. A series of experiments were performed at Argonne National Laboratory to calibrate the apparent surface temperature of the crystal as measured with an infrared camera as a function of the crystal thickness and the type of coating (if any) on the back side of the crystal. A good reflecting surface on the back side of the crystal increases the apparent temperature of the crystal and simulates the response of a crystal twice the thickness. These measurements make it possible to interpret the infrared signals from cooled silicon crystals used in past high heat load experiments. A number of examples are given for data taken in synchrotron experiments with high intensity x-ray beams

Improvement of composition of core sand and molding sand mixtures for power machine building castings

International Nuclear Information System (INIS)

Velikanov, G.F.; Primak, I.N.; Brechko, A.A.

1982-01-01

Considered is a problem of development and improvement of mixtures, as well as of antisticking coatings with the given parameters providing production of castings of the necessary quality. Requirements to properties of mixtures and antisticking coatings are formulated proceeding from the conditions of guaranteed production of qualitative steel castings with mass from 0.5 up to 20t and wall thickness from 60 up to 200 mm. Formation of film structure of binding compositions is studied, their marginal contact angle and surface tension are determined. In the result of work carried out on improvement of core sand and molding sand mixtures the labour productivity during the production of core and moldings has been increased in 20-25% in average, the quality has also been improved [ru

Key Processes of Silicon-On-Glass MEMS Fabrication Technology for Gyroscope Application.

Science.gov (United States)

Ma, Zhibo; Wang, Yinan; Shen, Qiang; Zhang, Han; Guo, Xuetao

2018-04-17

MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.

Development of deep silicon plasma etching for 3D integration technology

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Golishnikov А. А.

2014-02-01

Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

International Nuclear Information System (INIS)

Lowndes, D.H.; Jellison, G.E. Jr.; Pennycook, S.J.; Withrow, S.P.; Mashburn, D.N.

1986-01-01

Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm

Performance of soft clay stabilized with sand columns treated by silica fume

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Samueel Zeena

2018-01-01

Full Text Available In many road construction projects, if weak soil exists, then uncontrollable settlement and critical load carrying capacity are major difficult problems to the safety and serviceability of roads in these areas. Thus ground improvement is essential to achieve the required level of performance. The paper presents results of the tests of four categories. First category was performed on saturated soft bed of clay without any treatment, the second category shed light on the improvement achieved in loading carrying capacity and settlement as a result of reinforcing with conventional sand columns at area replacement ratio = 0.196. The third set investigates the bed reinforced by sand columns stabilized with dry silica fume at different percentages (3, 5 and 7% and the fourth set investigates the behavior of sand columns treated with slurry silica fume at two percentages (10 and 12%. All sand columns models were constructed at (R.D= 60%. Model tests were performed on bed of saturated soil prepared at undrained shear strength between 16-20 kPa for all models. For all cases, the model test was loaded gradually by stress increments up to failure. Stress deformation measurements are recorded and analyzed in terms of bearing improvement ratio and settlement reduction ratio. Optimum results were indicated from soil treated with sand columns stabilized with 7% dry silica fume at medium state reflecting the highest bearing improvement ratio (3.04 and the settlement reduction ratio (0.09 after 7 days curing. While soil treated with sand columns stabilized with 10% slurry silica fume provided higher bearing improvement ratio 3.13 with lower settlement reduction ratio of 0.57 after 7-days curing.

Formation of silicon Oxide nano thickness on Si (III) with the assistance of Cs

International Nuclear Information System (INIS)

Bahari, A.; Bagheri, M.

2006-01-01

: The possibility of controlling the growth of a uniform ultra thin oxide on silicon via oxygen dosing at low temperatures, would be a great interest for the projected further development of nano electronics. One way to achieve this is to be able to control the conversion of chemically adsorbed oxygen and retained at room temperature into oxide during subsequent heating. Oxygen is chemisorbed at room temperature on Si(111) surface to saturation ( >100 L O 2 ), and the experimental chamber is then evacuated. This leaves adsorbed oxygen as atomically inserted on Si surface which sits on the back bonds. This surface is then used as a base for further processing which in one case consists of annealing to 600- 700 d eg C and subsequent exposures equivalent to the first step. This is repeated again. As the focus of this work, a series of experiments are done with adsorbed Cs, which assists in retaining oxygen and in transforming the adsorbed oxygen into oxide upon heating. It was found that the oxide formed on the surface at low coverage clusters. Without any external influence, the clusters may be made to coalesce upon further oxygen adsorption at room temperature, and annealing terminates as a continuous monolayer of amorphous oxide on top of a well-ordered silicon substrate. This configuration is inert to further uptake of oxygen. A higher oxide thickness could be obtained with Cs. Also in this case, the oxide growth saturates in an inert oxide Iayer

Characteristics of SCC with Fly Ash and Manufactured Sand

Science.gov (United States)

Praveen Kumar, K.; Radhakrishna

2016-09-01

Self compacting concrete (SCC) of M40 grade was designed. The binder in SCC consists of OPC and fly ash in the ratio of 65:35. River sand was replaced by manufactured sand (M-sand) at replacement levels of 20,40,60,80 and 100%. An attempt was made to evaluate the workability and strength characteristics of self compacting concrete with river sand and manufactured sand as fine aggregates. For each replacement level, constant workability was maintained by varying the dosage of superplasticizer. T50 flow time, V Funnel time, V-funnel T5 time as well as compressive, split tensile and flexural strength of SCC were found at each replacement level of M-sand. They were compared to SCC with river sand. Results indicate favourable use of M-sand in preparation of Self Compacting Concrete.

Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride or PE-ALD titanium nitride for void-free bottom-up copper electroplating

NARCIS (Netherlands)

Saadaoui, M.; Zeijl, H. van; Wien, W.H.A.; Pham, H.T.M.; Kwakernaak, C.; Knoops, H.C.M.; Erwin Kessels, W.M.M.; Sanden, R.M.C.M. van de; Voogt, F.C.; Roozeboom, F.; Sarro, P.M.

2011-01-01

One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the

Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

NARCIS (Netherlands)

Saadaoui, M.; van Zeijl, H.; Wien, W. H. A.; Pham, H. T. M.; Kwakernaak, C.; Knoops, H. C. M.; Kessels, W. M. M.; R. van de Sanden,; Voogt, F. C.; Roozeboom, F.; Sarro, P. M.

2011-01-01

One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the

Radon diffusion studies in air, gravel, sand, soil and water

International Nuclear Information System (INIS)

Singh, B.; Singh, S.; Virk, H.S.

1993-01-01

Radon isotopes are practically inert and have properties of gases under conditions of geological interest. During their brief lives their atoms are capable of moving from sites of their generation. Radon diffusion studies were carried out in air, gravel, sand, soil and water using silicon diffused junction electronic detector, Alphameter-400. Diffusion constant and diffusion length is calculated for all these materials. (author)

Monte Carlo simulation studies for the determination of microcalcification thickness and glandular ratio through dual-energy mammography

Science.gov (United States)

Del Lama, L. S.; Godeli, J.; Poletti, M. E.

2017-08-01

The majority of breast carcinomas can be associated to the presence of calcifications before the development of a mass. However, the overlapping tissues can obscure the visualization of microcalcification clusters due to the reduced contrast-noise ratio (CNR). In order to overcome this complication, one potential solution is the use of the dual-energy (DE) technique, in which two different images are acquired at low (LE) and high (HE) energies or kVp to highlight specific lesions or cancel out tissue background. In this work, the DE features were computationally studied considering simulated acquisitions from a modified PENELOPE Monte Carlo code. The employed irradiation geometry considered typical distances used in digital mammography, a CsI detection system and an updated breast model composed of skin, microcalcifications and glandular and adipose tissues. The breast thickness ranged from 2 to 6 cm with glandularities of 25%, 50% and 75%, where microcalcifications with dimensions from 100 up to 600 μm were positioned. In general, results pointed an efficiency index better than 87% for the microcalcification thicknesses and better than 95% for the glandular ratio. The simulations evaluated in this work can be used to optimize the elements from the DE imaging chain, in order to become a complementary tool for the conventional single-exposure images, especially for the visualization and estimation of calcification thicknesses and glandular ratios.

Potential building sand deposits in Songkhla province area

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Kooptarnond, K.

2002-10-01

Full Text Available An investigation of potential building sand deposits in Songkhla province area subdivided them into four regions according to their accumulation in various alluvial plains, meanders throughout alluvial deposits and residual soils. Four selected deposits, were Rattaphum-Khuan Niang, U-Taphao river, Na Mom, and Chana-Thepha regions. Information obtained from these deposits revealed a good correlation between the geomorphological features as interpreted from aerial photographs and those identified from vertical electrical resistivity sounding results. Sand samples were analysed for their physical and chemical properties. Petrographic studies were also undertaken to characterize the composition types, texture and shapes. An overview of the sand properties was used them to be within the acceptable limits for building sand. However, relatively high organic impurities and soundness were found in sand from Khuan Niang and Na Mom deposits. The result indicated a potential reconnaissance mineral resource of about 46 square kilometres.A reserve evaluation for natural building sand was carried out by using Geographic Information System (GIS. Maps of the various parameters considered were constructed in digital database format with the aid of Arc/Info and ArcView software. Overlay mapping and buffer zone modules were performed to evaluate inferred resources of building sand. The key parameters of analysis included the distance from transportation, distance from streams, lithology and thickness of sand layers. The remaining inferred sand total was of about 386 million cubic metres or about 1,021 million metric tons was therefore estimated, of which 60 percent lies in the Rattaphum-Khuan Niang region and 40 percent in the other regions.

Determination of oxygen, nitrogen, and silicon in Nigerian fossil fuels by 14 MeV neutron activation analysis

International Nuclear Information System (INIS)

Hannan, M.A.; Oluwole, A.F.; Kehinde, L.O.; Borisade, A.B.

2003-01-01

Classification, assessment, and utilization of coal and crude oil extracts are enhanced by analysis of their oxygen content. Values of oxygen obtained 'by difference' from chemical analysis have proved inaccurate. The oxygen, nitrogen, and silicon content of Nigerian coal samples, crude oils, bitumen extracts, and tar sand samples were measured directly using instrumental fast neutron activation analysis (FNAA). The total oxygen in the coal ranges from 5.20% to 23.3%, in the oil and extracts from 0.14% to 1.08%, and in the tar sands from 38% to 47%. The nitrogen content in the coal ranges from 0.54% to 1.35%, in the crude oil and bitumen extracts from ≤ 0.014% to 0.490%, and in the tar sands from 0.082% to 0.611%. The silicon content in the coal ranges from 1.50% to 8.86%; in the oil and the bitumen extracts it is <1%, and in the tar sands between 25.1% and 37.5%. The results show that Nigerian coals are mostly sub-bituminous. However, one of the samples showed bituminous properties as evidenced by the dry ash-free (daf) percent of carbon obtained. This same sample indicated a higher ash content resulting in a comparatively high percentage of silicon. In oils and tar sands from various locations, a comparison of elements is made. (author)

Silicon vertex detector for superheavy elements identification

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Bednarek A.

2012-07-01

Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

Pb(Zr,Ti)O3-Pb(Mn1/3Nb2/3)O3 piezoelectric thick films by aerosol deposition

International Nuclear Information System (INIS)

Ryu, Jungho; Choi, Jong-Jin; Hahn, Byung-Dong; Yoon, Woon-Ha; Lee, Byoung-Kuk; Choi, Joon Hwan; Park, Dong-Soo

2010-01-01

Piezoelectric thick films of Pb(Zr,Ti)O 3 -Pb(Mn 1/3 Nb 2/3 )O 3 (PZT-PMnN) with Zr:Ti ratios ranging from 0.45:0.55 to 0.60:0.40 were fabricated on a platinized silicon wafer by aerosol deposition (AD). All the films were deposited with a thickness of 10 μm with high density. By adding PMnN to 57:43 PZT, a dielectric constant as low as ∼660 was achieved while the effective piezoelectric constant was over 140 pC/N. PZT-PMnN with a Zr:Ti ratio of 57:43 thus showed a maximum piezoelectric voltage constant (g 33 ) of 23.8 x 10 -3 Vm/N and is a good candidate for high quality thick films for application to high-energy density or high sensitivity, piezoelectric energy harvesters and sensors.

Porous silicon technology for integrated microsystems

Science.gov (United States)

Wallner, Jin Zheng

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

Assessing neutron generator output using neutron activation of silicon

International Nuclear Information System (INIS)

Kehayias, Pauli M.; Kehayias, Joseph J.

2007-01-01

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the 28 Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10 3 n/s/cm 2 ± 5%, which is consistent with the manufacturer's specifications

Assessing neutron generator output using neutron activation of silicon

Energy Technology Data Exchange (ETDEWEB)

Kehayias, Pauli M. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States); Kehayias, Joseph J. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States)]. E-mail: joseph.kehayias@tufts.edu

2007-08-15

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the {sup 28}Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10{sup 3} n/s/cm{sup 2} {+-} 5%, which is consistent with the manufacturer's specifications.

Inverted amorphous silicon solar cell utilizing cermet layers

Science.gov (United States)

Hanak, Joseph J.

1979-01-01

An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

International Nuclear Information System (INIS)

Sridhar, N.; Chung, D.D.L.

1992-01-01

This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

Study on the Permeability Characteristics of Polyurethane Soil Stabilizer Reinforced Sand

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Jin Liu

2017-01-01

Full Text Available A polymer material of polyurethane soil stabilizer (PSS is used to reinforce the sand. To understand the permeability characteristics of PSS reinforced sand, a series of reinforcement layer form test, single-hole permeability test, and porous permeability test of sand reinforced with PSS have been performed. Reinforcement mechanism is discussed with scanning electron microscope images. The results indicated that the permeability resistance of sand reinforced with polyurethane soil stabilizer is improved through the formation of reinforcement layer on the sand surface. The thickness and complete degree of the reinforcement layer increase with the increasing of curing time and PSS concentration. The water flow rate decreases with the increasing of curing time or PSS concentration. The permeability coefficient decreases with the increasing of curing time and PSS concentration and increases with the increasing of depth in specimen. PSS fills up the voids of sand and adsorbs on the surface of sand particle to reduce or block the flowing channels of water to improve the permeability resistance of sand. The results can be applied as the reference for chemical reinforcement sandy soil engineering, especially for surface protection of embankment, slope, and landfill.

Laboratory studies of dune sand for the use of construction industry in Sri Lanka

Science.gov (United States)

de Silva Jayawardena, Upali; Wijesuriya, Roshan; Abayaweera, Gayan; Viduranga, Tharaka

2015-04-01

With the increase of the annual sand demand for the construction industry the excessive excavation of river sand is becoming a serious environmental problem in Sri Lanka. Therefore, it is necessary to explore the possibility for an alternative to stop or at least to minimize river sand mining activities. Dune sand is one of the available alternative materials to be considered instead of river sand in the country. Large quantities of sand dunes occur mainly along the NW and SE coastal belt which belong to very low rainfall Dry Zone coasts. The height of dune deposits, vary from 1m to about 30 meters above sea level. The objective of this paper is to indicate some studies and facts on the dune sand deposits of Sri Lanka. Laboratory studies were carried out for visual observations and physical properties at the initial stage and then a number of tests were carried out according to ASTM standards to obtain the compressive strength of concrete cylinders and mortar cubes mixing dune sand and river sand in different percentages keeping a constant water cement ratio. Next the water cement ratio was changed for constant dune sand and river sand proportion. Microscopic analysis shows that the dune sand consist of 95 % of quartz and 5 % of garnet, feldspar, illmenite and other heavy minerals with clay, fine dust, fine shell fragments and organic matters. Grains are sub-rounded to angular and tabular shapes. The grain sizes vary from fine to medium size of sand with silt. The degree of sorting and particle size observed with dune sands are more suited with the requirement of fine aggregates in the construction industry. The test result indicates that dune sand could be effectively used in construction work without sieving and it is ideal for wall plastering due to its'-uniformity. It could also be effectively used in concrete and in mortars mixing with river sand. The best mixing ratio is 75% dune sand and 25% river sand as the fine aggregate of concrete. For mortar the mixing

Determination of accurate metal silicide layer thickness by RBS

International Nuclear Information System (INIS)

Kirchhoff, J.F.; Baumann, S.M.; Evans, C.; Ward, I.; Coveney, P.

1995-01-01

Rutherford Backscattering Spectrometry (RBS) is a proven useful analytical tool for determining compositional information of a wide variety of materials. One of the most widely utilized applications of RBS is the study of the composition of metal silicides (MSi x ), also referred to as polycides. A key quantity obtained from an analysis of a metal silicide is the ratio of silicon to metal (Si/M). Although compositional information is very reliable in these applications, determination of metal silicide layer thickness by RBS techniques can differ from true layer thicknesses by more than 40%. The cause of these differences lies in how the densities utilized in the RBS analysis are calculated. The standard RBS analysis software packages calculate layer densities by assuming each element's bulk densities weighted by the fractional atomic presence. This calculation causes large thickness discrepancies in metal silicide thicknesses because most films form into crystal structures with distinct densities. Assuming a constant layer density for a full spectrum of Si/M values for metal silicide samples improves layer thickness determination but ignores the underlying physics of the films. We will present results of RBS determination of the thickness various metal silicide films with a range of Si/M values using a physically accurate model for the calculation of layer densities. The thicknesses are compared to scanning electron microscopy (SEM) cross-section micrographs. We have also developed supporting software that incorporates these calculations into routine analyses. (orig.)

Afyon-Sandıklı

Indian Academy of Sciences (India)

δ18O and δD isotope ratios of the Sandıklı waters plot along the continental meteoric water line ... and district heating. Several studies on geology, hydrogeology along ..... precipitation; In: Handbook of Environmental Isotope. Geochemistry ...

Swelling characteristics of sand-bentonite mixtures under one-dimensional stress

International Nuclear Information System (INIS)

Cui, Hongbin; Sun, De'an; Matsuoka, Hajime; Xu Yongfu

2004-01-01

Based on the concept that the maximum water volume absorbed by unit volume of montmorillonite is constant, the swelling deformation of sand-bentonite mixtures is uniquely characterized using the void ratio of montmorillonite, which is defined by the ratio of water volume to montomorillonite volume. The relationship between the montmorillonite void ratio and overburden pressure at fully swelling is independent of the initial compaction condition and the sand-bentonite mixture ratio, and is a linear line in their log scale. When overburden pressure is large enough and/or the bentonite ratio of the mixture is small, the measured plots deviate from the line. A method for predicting the limited overburden pressure which is linearly correlated with the montmorillonite void ratio is proposed and verified using the concept of the skeleton void ratio. (author)

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Characterization of 150μm thick epitaxial silicon detectors from different producers after proton irradiation

International Nuclear Information System (INIS)

Hoedlmoser, H.; Moll, M.; Haerkoenen, J.; Kronberger, M.; Trummer, J.; Rodeghiero, P.

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150μm thick EPI silicon diodes irradiated with 24GeV/c protons up to a fluence of 3x10 15 p/cm 2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV/IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences (5x10 13 p/cm 2 ) in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of 3x10 15 p/cm 2 for n-type devices whereas p-type diodes undergo type inversion from p- to n-type for fluences higher than ∼2x10 14 p/cm 2

High-aspect-ratio, silicon oxide-enclosed pillar structures in microfluidic liquid chromatography.

Science.gov (United States)

Taylor, Lisa C; Lavrik, Nickolay V; Sepaniak, Michael J

2010-11-15

The present paper discusses the ability to separate chemical species using high-aspect-ratio, silicon oxide-enclosed pillar arrays. These miniaturized chromatographic systems require smaller sample volumes, experience less flow resistance, and generate superior separation efficiency over traditional packed bed liquid chromatographic columns, improvements controlled by the increased order and decreased pore size of the systems. In our distinctive fabrication sequence, plasma-enhanced chemical vapor deposition (PECVD) of silicon oxide is used to alter the surface and structural properties of the pillars for facile surface modification while improving the pillar mechanical stability and increasing surface area. The separation behavior of model compounds within our pillar systems indicated an unexpected hydrophobic-like separation mechanism. The effects of organic modifier, ionic concentration, and pressure-driven flow rate were studied. A decrease in the organic content of the mobile phase increased peak resolution while detrimentally effecting peak shape. A resolution of 4.7 (RSD = 3.7%) was obtained for nearly perfect Gaussian shaped peaks, exhibiting plate heights as low as 1.1 and 1.8 μm for fluorescein and sulforhodamine B, respectively. Contact angle measurements and DART mass spectrometry analysis indicate that our employed elastomeric soft bonding technique modifies pillar properties, creating a fortuitous stationary phase. This discovery provides evidence supporting the ability to easily functionalize PECVD oxide surfaces by gas-phase reactions.

Influence of the void ratio and the confining on the static liquefaction in slopes in shangi sand

Directory of Open Access Journals (Sweden)

Alfonso Mariano Ramos Cañón

2015-01-01

Full Text Available A numerical study on the onset of static liquefaction in slopes under undrained conditions of loading was developed based on a general liquefaction flow instability criterion for elastoplastic soils based on the concept of loss of controllability. The criterion is applied to the case of axisymmetric loading to detect the onset of static liquefaction. The criterion is used in conjunction with an elastoplastic model for sands and is tested by means of numerical simulations of element tests. The numerical results are compared with experimental evidence obtaining good agreement. A quantitative study of the influence of the mean pressure, void ratio and the anisotropy of stress on the onset of static liquefaction is presented for the Changi sand. From the analysis of the numerical results, it can be concluded that: a. the mobilized friction angle at the onset of liquefaction is not an intrinsic property of the material, but is a state variable b. Despite of the multiple variables involved in the process of generation of undrained instability, the state of stresses at the onset of static liquefaction can be conveniently represented by a linear relation between Dq/po and no . This graphical representation can be used in the practice of geotechnical engineering to quantify the margin of security against the static liquefaction of a sandy slope.

Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Energy Technology Data Exchange (ETDEWEB)

An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2009-07-31

We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

Diamond deposition on siliconized stainless steel

International Nuclear Information System (INIS)

Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

2010-01-01

Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

Science.gov (United States)

Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

2016-12-01

It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

Comparison of physical and mechanical properties of river sand concrete with quarry dust concrete

Science.gov (United States)

Opara, Hyginus E.; Eziefula, Uchechi G.; Eziefula, Bennett I.

2018-03-01

This study compared the physical and mechanical properties of river sand concrete with quarry dust concrete. The constituent materials were batched by weight. The water-cement ratio and mix ratio selected for the experimental investigation were 0.55 and 1:2:4, respectively. The specimens were cured for 7, 14, 21 and 28 days. Slump, density and compressive strength tests were carried out. The results showed that river sand concrete had greater density and compressive strength than quarry dust concrete for all curing ages. At 28 days of curing, river sand concrete exceeded the target compressive strength by 36%, whereas quarry dust concrete was less than the target compressive strength by 12%. Both river sand concrete and quarry dust concrete for the selected water/cement ratio and mix ratio are suitable for non-structural applications and lightly-loaded members where high strength is not a prerequisite.

Experimental investigation on high performance RC column with manufactured sand and silica fume

Science.gov (United States)

Shanmuga Priya, T.

2017-11-01

In recent years, the use High Performance Concrete (HPC) has increased in construction industry. The ingredients of HPC depend on the availability and characteristics of suitable alternative materials. Those alternative materials are silica fume and manufactured sand, a by products from ferro silicon and quarry industries respectively. HPC made with silica fume as partial replacement of cement and manufactured sand as replacement of natural sand is considered as sustainable high performance concrete. In this present study the concrete was designed to get target strength of 60 MPa as per guide lines given by ACI 211- 4R (2008). The laboratory study was carried out experimentally to analyse the axial behavior of reinforced cement HPC column of size 100×100×1000mm and square in cross section. 10% of silica fume was preferred over ordinary portland cement. The natural sand was replaced by 0, 20, 40, 60, 80 and 100% with Manufactured Sand (M-Sand). In this investigation, totally 6 column specimens were cast for mixes M1 to M6 and were tested in 1000kN loading frame at 28 days. From this, Load-Mid height deflection curves were drawn and compared. Maximum ultimate load carrying capacity and the least deflection is obtained for the mix prepared by partial replacement of cement with 10% silica fume & natural sand by 100% M-Sand. The fine, amorphous and pozzalonic nature of silica fume and fine mineral particles in M- Sand increased the stiffness of HPC column. The test results revealed that HPC can be produced by using M-Sand with silica fume.

Connecting Brabant's cover sand landscapes through landscape history

Science.gov (United States)

Heskes, Erik; van den Ancker, Hanneke; Jungerius, Pieter Dirk; Harthoorn, Jaap; Maes, Bert; Leenders, Karel; de Jongh, Piet; Kluiving, Sjoerd; van den Oetelaar, Ger

2015-04-01

Noord-Brabant has the largest variety of cover sand landscapes in The Netherlands, and probably in Western Europe. During the Last Ice Age the area was not covered by land ice and a polar desert developed in which sand dunes buried the existing river landscapes. Some of these polar dune landscapes experienced a geomorphological and soil development that remained virtually untouched up to the present day, such as the low parabolic dunes of the Strabrechtse Heide or the later and higher dunes of the Oisterwijkse Vennen. As Noord-Brabant lies on the fringe of a tectonic basin, the thickness of cover sand deposits in the Centrale Slenk, part of a rift through Europe, amounts up to 20 metres. Cover sand deposits along the fault lines cause the special phenomenon of 'wijst' to develop, in which the higher grounds are wetter than the boarding lower grounds. Since 4000 BC humans settled in these cover sand landscapes and made use of its small-scale variety. An example are the prehistoric finds on the flanks and the historic towns on top of the 'donken' in northwest Noord-Brabant, where the cover sand landscapes are buried by river and marine deposits and only the peaks of the dunes protrude as donken. Or the church of Handel that is built beside a 'wijst' source and a site of pilgrimage since living memory. Or the 'essen' and plaggen agriculture that developed along the stream valleys of Noord-Brabant from 1300 AD onwards, giving rise to geomorphological features as 'randwallen' and plaggen soils of more than a metre thickness. Each region of Brabant each has its own approach in attracting tourists and has not yet used this common landscape history to connect, manage and promote their territories. We propose a landscape-historical approach to develop a national or European Geopark Brabants' cover sand landscapes, in which each region focuses on a specific part of the landscape history of Brabant, that stretches from the Late Weichselian polar desert when the dune

Metrology of nanosize biopowders using porous silicon surface

International Nuclear Information System (INIS)

Zhuravel', L.V.; Latukhina, N.V.; Pisareva, E.V.; Vlasov, M.Yu.; Volkov, A.V.; Volodkin, B.O.

2008-01-01

Powders of hydroxyapatite deposited on porous silicon surface were investigated by TEM and STM methods. Thickness of porous lay was 1-100 micrometers; porous diameter was 0.01-10 micrometers. Images of porous silicon surface with deposited particles give possibility to estimate particles size and induce that only proportionate porous diameter particles have good adhesion to porous silicon surface.

Progress in thin-film silicon solar cells based on photonic-crystal structures

Science.gov (United States)

Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

2018-06-01

We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

Science.gov (United States)

Jafar, N.; Soin, N.

2009-06-01

This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

Parameters and mechanisms in the mechanical upgrading of Athabasca oil sands by a cold water process

Energy Technology Data Exchange (ETDEWEB)

Grant, G B

1977-01-01

The efficiency of sand rejection in the cold water mechanical upgrading of Athabasca oil sands has been studied in the operation of rotary contactors of 8.9 cm and 19.0 cm internal diameter, fitted with lifters. Duration of operation, rate of rotation, linear velocity of lifters, temperature, water to oil sands ratio, depth of charge to lifter height ratio, and internal diameter of the contactor have been identified as important parameters. Surfactant addition and presoaking of the feed had negligible effects on the process. A model has been proposed that accounts for the variation of extraction efficiency as a function of duration of operation, the data showing that both the equilibrium extraction efficiency and the rate constant were greater in the large contactor than the small contactor for equal rates of rotation, except when centrifuging occurred in the large contactor. Sand rejection was promoted by lifter-sand and contactor wall-sand impacts and by the action of shear fields within vortices created by the lifter. The impacts occurred for all loading conditions but the latter mechanism only contributed to the sand rejection process for depth-of-charge to lifter height ratios of one or greater. In addition, the contribution of shear fields was only significant for large water to oil sands ratios. Finally, the sand rejection process was affected significantly by variations in temperature. 37 refs., 34 figs., 11 tabs., 4 illus.

Alpha radiation detection using silicon memory chips - preliminary studies

International Nuclear Information System (INIS)

Pace, R.; Paix, D.; Haskard, M.

1993-01-01

Alpha radiation dosage is an important occupational health factor in the mining of uranium and mineral sands. Alpha radiation induced errors in the data of silicon based memory chips provide the foundation for a new type of sensor, with the potential for affordable and prompt measurement of personal alpha doses. With particular reference to Dynamic Random Access Memories (DRAM) this paper introduces the operating principle of a memory based radiation sensor, which is the error mechanism in silicon integrated circuits. 14 refs., 3 figs

A Comparison of Vibroacoustic Response of Isotropic Plate with Attached Discrete Patches and Point Masses Having Different Thickness Variation with Different Taper Ratios

Directory of Open Access Journals (Sweden)

Bipin Kumar

2016-01-01

Full Text Available A comparison of sound radiation behavior of plate in air medium with attached discrete patches/point masses having different thickness variations with different taper ratio of 0.3, 0.6, and 0.9 is analysed. Finite element method is used to find the vibration characteristics while Rayleigh integral is used to predict the sound radiation characteristics. Minimum peak sound power level obtained is at a taper ratio of 0.6 with parabolic increasing-decreasing thickness variation for plate with four discrete patches. At higher taper ratio, linearly increasing-decreasing thickness variation is another alternative for minimum peak sound power level suppression with discrete patches. It is found that, in low frequency range, average radiation efficiency remains almost the same, but near first peak, four patches or four point masses cause increase in average radiation efficiency; that is, redistribution of point masses/patches does have effect on average radiation efficiency at a given taper ratio.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

A practical method for estimating maximum shear modulus of cemented sands using unconfined compressive strength

Science.gov (United States)

Choo, Hyunwook; Nam, Hongyeop; Lee, Woojin

2017-12-01

The composition of naturally cemented deposits is very complicated; thus, estimating the maximum shear modulus (Gmax, or shear modulus at very small strains) of cemented sands using the previous empirical formulas is very difficult. The purpose of this experimental investigation is to evaluate the effects of particle size and cement type on the Gmax and unconfined compressive strength (qucs) of cemented sands, with the ultimate goal of estimating Gmax of cemented sands using qucs. Two sands were artificially cemented using Portland cement or gypsum under varying cement contents (2%-9%) and relative densities (30%-80%). Unconfined compression tests and bender element tests were performed, and the results from previous studies of two cemented sands were incorporated in this study. The results of this study demonstrate that the effect of particle size on the qucs and Gmax of four cemented sands is insignificant, and the variation of qucs and Gmax can be captured by the ratio between volume of void and volume of cement. qucs and Gmax of sand cemented with Portland cement are greater than those of sand cemented with gypsum. However, the relationship between qucs and Gmax of the cemented sand is not affected by the void ratio, cement type and cement content, revealing that Gmax of the complex naturally cemented soils with unknown in-situ void ratio, cement type and cement content can be estimated using qucs.

DOE applied to study the effect of process parameters on silicon spacing in lost foam Al-Si-Cu alloy casting

International Nuclear Information System (INIS)

Shayganpour, A; Izman, S; Idris, M H; Jafari, H

2012-01-01

Lost foam casting as a relatively new manufacturing process is extensively employed to produce sound complicated castings. In this study, an experimental investigation on lost foam casting of an Al-Si-Cu aluminium cast alloy was conducted. The research was aimed in evaluating the effect of different pouring temperatures, slurry viscosities, vibration durations and sand grain sizes on eutectic silicon spacing of thin-wall castings. A stepped-pattern was used in the study and the focus of the investigations was at the thinnest 3 mm section. A full two-level factorial design experimental technique was used to plan the experiments and afterwards identify the significant factors affecting casting silicon spacing. The results showed that pouring temperature and its interaction with vibration time have pronounced effect on eutectic silicon phase size. Increasing pouring temperature coarsened the eutectic silicon spacing while the higher vibration time diminished coarsening effect. Moreover, no significant effects on silicon spacing were found with variation of sand size and slurry viscosity.

The effect of carbon mole ratio on the fabrication of silicon carbide

Directory of Open Access Journals (Sweden)

Sutham Niyomwas

2008-03-01

Full Text Available Silicon Carbide (SiC particles were synthesized by self-propagating high temperature synthesis (SHS from a powder mixture of SiO2-C-Mg. The reaction was carried out in a SHS reactor under static argon gas at a pressure of 0.5 MPa. The standard Gibbs energy minimization method was used to calculate the equilibrium composition of the reacting species. The effects of carbon mole ratio on the precursor mixture (C/SiO2/Mg: 1/1/2 to 3/1/2 and on the SiC conversion were investigated using X-ray diffraction and scanning electron microscope technique. The as-synthesized products of SiC-MgO powders were leached with 0.1M HCl acid solution to obtain the SiC particles.

Time-dependent fracture probability of bilayer, lithium-disilicate-based glass-ceramic molar crowns as a function of core/veneer thickness ratio and load orientation

Science.gov (United States)

Anusavice, Kenneth J.; Jadaan, Osama M.; Esquivel–Upshaw, Josephine

2013-01-01

Recent reports on bilayer ceramic crown prostheses suggest that fractures of the veneering ceramic represent the most common reason for prosthesis failure. Objective The aims of this study were to test the hypotheses that: (1) an increase in core ceramic/veneer ceramic thickness ratio for a crown thickness of 1.6 mm reduces the time-dependent fracture probability (Pf) of bilayer crowns with a lithium-disilicate-based glass-ceramic core, and (2) oblique loading, within the central fossa, increases Pf for 1.6-mm-thick crowns compared with vertical loading. Materials and methods Time-dependent fracture probabilities were calculated for 1.6-mm-thick, veneered lithium-disilicate-based glass-ceramic molar crowns as a function of core/veneer thickness ratio and load orientation in the central fossa area. Time-dependent fracture probability analyses were computed by CARES/Life software and finite element analysis, using dynamic fatigue strength data for monolithic discs of a lithium-disilicate glass-ceramic core (Empress 2), and ceramic veneer (Empress 2 Veneer Ceramic). Results Predicted fracture probabilities (Pf) for centrally-loaded 1,6-mm-thick bilayer crowns over periods of 1, 5, and 10 years are 1.2%, 2.7%, and 3.5%, respectively, for a core/veneer thickness ratio of 1.0 (0.8 mm/0.8 mm), and 2.5%, 5.1%, and 7.0%, respectively, for a core/veneer thickness ratio of 0.33 (0.4 mm/1.2 mm). Conclusion CARES/Life results support the proposed crown design and load orientation hypotheses. Significance The application of dynamic fatigue data, finite element stress analysis, and CARES/Life analysis represent an optimal approach to optimize fixed dental prosthesis designs produced from dental ceramics and to predict time-dependent fracture probabilities of ceramic-based fixed dental prostheses that can minimize the risk for clinical failures. PMID:24060349

Time-dependent fracture probability of bilayer, lithium-disilicate-based, glass-ceramic, molar crowns as a function of core/veneer thickness ratio and load orientation.

Science.gov (United States)

Anusavice, Kenneth J; Jadaan, Osama M; Esquivel-Upshaw, Josephine F

2013-11-01

Recent reports on bilayer ceramic crown prostheses suggest that fractures of the veneering ceramic represent the most common reason for prosthesis failure. The aims of this study were to test the hypotheses that: (1) an increase in core ceramic/veneer ceramic thickness ratio for a crown thickness of 1.6mm reduces the time-dependent fracture probability (Pf) of bilayer crowns with a lithium-disilicate-based glass-ceramic core, and (2) oblique loading, within the central fossa, increases Pf for 1.6-mm-thick crowns compared with vertical loading. Time-dependent fracture probabilities were calculated for 1.6-mm-thick, veneered lithium-disilicate-based glass-ceramic molar crowns as a function of core/veneer thickness ratio and load orientation in the central fossa area. Time-dependent fracture probability analyses were computed by CARES/Life software and finite element analysis, using dynamic fatigue strength data for monolithic discs of a lithium-disilicate glass-ceramic core (Empress 2), and ceramic veneer (Empress 2 Veneer Ceramic). Predicted fracture probabilities (Pf) for centrally loaded 1.6-mm-thick bilayer crowns over periods of 1, 5, and 10 years are 1.2%, 2.7%, and 3.5%, respectively, for a core/veneer thickness ratio of 1.0 (0.8mm/0.8mm), and 2.5%, 5.1%, and 7.0%, respectively, for a core/veneer thickness ratio of 0.33 (0.4mm/1.2mm). CARES/Life results support the proposed crown design and load orientation hypotheses. The application of dynamic fatigue data, finite element stress analysis, and CARES/Life analysis represent an optimal approach to optimize fixed dental prosthesis designs produced from dental ceramics and to predict time-dependent fracture probabilities of ceramic-based fixed dental prostheses that can minimize the risk for clinical failures. Copyright © 2013 Academy of Dental Materials. All rights reserved.

Reflection color filters of the three primary colors with wide viewing angles using common-thickness silicon subwavelength gratings.

Science.gov (United States)

Kanamori, Yoshiaki; Ozaki, Toshikazu; Hane, Kazuhiro

2014-10-20

We fabricated reflection color filters of the three primary colors with wide viewing angles using silicon two-dimensional subwavelength gratings on the same quartz substrate. The grating periods were 400, 340, and 300 nm for red, green, and blue filters, respectively. All of the color filters had the same grating thickness of 100 nm, which enabled simple fabrication of a color filter array. Reflected colors from the red, green, and blue filters under s-polarized white-light irradiation appeared in the respective colors at incident angles from 0 to 50°. By rigorous coupled-wave analysis, the dimensions of each color filter were designed, and the calculated reflectivity was compared with the measured reflectivity.

Permeability Tests on Eastern Scheldt Sand

DEFF Research Database (Denmark)

Jakobsen, Kim Parsberg

on the characteristics of the soil matrix, the permeability is determined for different void ratios. All tests are performed on reconstituted specimens of Eastern Scheldt Sand. The permeability is determined by use of a falling head apparatus. Finally the test results are briefly summarised and a relationship between......The flow through porous media plays an important role in various engineering disciplines, as for example in ground water hydrology and soil mechanics. In the present study the permeability is determined for a fine, saturated sand. As the flow through a porous media strongly depends...

Metal droplet holdup in the thick slag layer subjected to bottom gas injection; Gas sokofuki wo tomonau atsui slag sonai ni okeru metal teki no holdup

Energy Technology Data Exchange (ETDEWEB)

Takashima, S; Iguchi, M [Hokkaido University, Sapporo (Japan)

2000-04-01

Model experiments were carried out to investigate the bubble and liquid flow characteristics in a bottom blowing bath covered with a thick slag layer typical of in-bath smelting reduction processes. An aqueous ZnCl{sub 2} solution and silicone oil were used as the models for molten metal and molten slag, respectively. The density ratio of the solution to the silicone oil was 1.7, being close to a steel/slag density ratio of 2.0 to 2.2 in practice. The diameter of a vessel containing the two liquids was changed over a wide range. The holdup of the solution carried up by bubbles into the upper silicone oil layer was measured with a suction tube. The volume of the solution, V{sub m}, was dependent mainly on the density difference. Empirical correlations of V{sub m} and the penetration height of the solution were derived. (author)

Ion beam heating of thin silicon membranes

International Nuclear Information System (INIS)

Tissot, P.E.; Hart, R.R.

1993-01-01

For silicon membranes irradiated by an ion beam in a vacuum environment, such as the masks used for ion beam lithography and the membranes used for thin film self-annealing, the heat transfer modes are radiation and limited conduction through the thin membrane. The radiation component depends on the total hemispherical emissivity which varies with the thickness and temperature of the membrane. A semiempirical correlation for the absorption coefficient of high resistivity silicon was derived and the variation of the total emissivity with temperature was computed for membranes with thicknesses between 0.1 and 10 μm. Based on this result, the temperatures reached during exposure to ion beams of varying intensities were computed. A proper modeling of the emissivity is shown to be important for beam heating of thin silicon membranes. (orig.)

Effect of thickness on silicon solar cell efficiency

Science.gov (United States)

Sah, C.-T.; Yamakawa, K. A.; Lutwack, R.

1982-01-01

A computer-aided-design study on the dependence of the efficiency peak of a back-surface field solar cell on the concentrations of the recombination and dopant impurities is presented. The illuminated current-voltage characteristics of more than 100 cell designs are obtained using the transmission line circuit model to numerically solve the Shockley equations. Using an AM 1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies by less than 1% over more than a three-to-one range of cell thicknesses from 30 to 100 microns. An optically reflecting back surface will give only a slight improvement of AM 1 efficiency, about 0.7%, in this thickness range. Attention is given to the dependence of the efficiency on patchiness across the back-surface field low-high junction in thin cells.

Ion beam analysis of PECVD silicon oxide thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

2006-01-01

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Reservoir evaluation of thin-bedded turbidites and hydrocarbon pore thickness estimation for an accurate quantification of resource

Science.gov (United States)

Omoniyi, Bayonle; Stow, Dorrik

2016-04-01

One of the major challenges in the assessment of and production from turbidite reservoirs is to take full account of thin and medium-bedded turbidites (succession, they can go unnoticed by conventional analysis and so negatively impact on reserve estimation, particularly in fields producing from prolific thick-bedded turbidite reservoirs. Field development plans often take little note of such thin beds, which are therefore bypassed by mainstream production. In fact, the trapped and bypassed fluids can be vital where maximising field value and optimising production are key business drivers. We have studied in detail, a succession of thin-bedded turbidites associated with thicker-bedded reservoir facies in the North Brae Field, UKCS, using a combination of conventional logs and cores to assess the significance of thin-bedded turbidites in computing hydrocarbon pore thickness (HPT). This quantity, being an indirect measure of thickness, is critical for an accurate estimation of original-oil-in-place (OOIP). By using a combination of conventional and unconventional logging analysis techniques, we obtain three different results for the reservoir intervals studied. These results include estimated net sand thickness, average sand thickness, and their distribution trend within a 3D structural grid. The net sand thickness varies from 205 to 380 ft, and HPT ranges from 21.53 to 39.90 ft. We observe that an integrated approach (neutron-density cross plots conditioned to cores) to HPT quantification reduces the associated uncertainties significantly, resulting in estimation of 96% of actual HPT. Further work will focus on assessing the 3D dynamic connectivity of the low-pay sands with the surrounding thick-bedded turbidite facies.

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Soft chemical synthesis of silicon nanosheets and their applications

Energy Technology Data Exchange (ETDEWEB)

Nakano, Hideyuki; Ikuno, Takashi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

2016-12-15

Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

DEFF Research Database (Denmark)

Lei, Anders; Xu, Ruichao; Pedersen, C.M.

2011-01-01

This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer...... to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer....../mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency....

X-ray and synchrotron studies of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Sivkov, V. N., E-mail: svn@dm.komisc.ru [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation); Lomov, A. A. [Russian Academy of Sciences, Physical-Technological Institute (Russian Federation); Vasil' ev, A. L. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Nekipelov, S. V. [Komi State Pedagogical Institute (Russian Federation); Petrova, O. V. [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation)

2013-08-15

The results of comprehensive studies of layers of porous silicon of different conductivity types, grown by anodizing standard Si(111) substrates in an electrolyte based on fluoric acid and ethanol with the addition of 5% of iodine and kept in air for a long time, are discussed. Measurements are performed by scanning electron microscopy, high-resolution X-ray diffraction, and ultrasoft X-ray spectroscopy using synchrotron radiation. The structural parameters of the layers (thickness, strain, and porosity) and atomic and chemical composition of the porous-silicon surface are determined. It is found that an oxide layer 1.5-2.3-nm thick is formed on the surface of the silicon skeleton. The near-edge fine structure of the Si 2p absorption spectrum of this layer corresponds to the fine structure of the 2p spectrum of well coordinated SiO{sub 2}. In this case, the fine structure in the Si 2p-edge absorption region of the silicon skeleton is identical to that of the 2p absorption spectrum of crystalline silicon.

Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

Science.gov (United States)

Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

2009-02-01

Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

International Nuclear Information System (INIS)

Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

2009-01-01

Ba 0.7 Sr 0.3 TiO 3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (∼0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

Energy Technology Data Exchange (ETDEWEB)

Mandal, Aparajita [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Kole, Arindam, E-mail: erak@iacs.res.in [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Dasgupta, Arup [Microscopy and Thermophysical Property Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chaudhuri, Partha [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

2016-11-30

Highlights: • Low temperature columnar growth of regular sized Si-quantum dots (Si-QDs) within a-SiC:H/μc-SiC:H multilayer structure by tuning the a-SiC:H layer thickness. • Thickness optimization of the a-SiC:H layers resulted in a sharp increase of the transverse current and a decrease of the trap concentrations. • The arrangements of the Si-QDs favor percolation paths for the transverse current. - Abstract: Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel–Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

Energy Technology Data Exchange (ETDEWEB)

Kumar, A.; Ravi, K. V.

2011-06-01

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

[Effect of concomitant substances and addition order on the adsorption of Tween 80 on sand].

Science.gov (United States)

Xu, Wei; Zhao, Yong-sheng; Li, Sui; Dai, Ning

2008-08-01

Adsorption of Tween 80 on sand was investigated, and the effect of inorganic salts (CaCl2), anionic surfactant (SDS) and lignosulphonates (sodium lignosulphonate or ammonium lignosulphonate) on the adsorption of Tween 80 on sand were evaluated at 25 degrees C. The results show that saturated adsorption amount of Tween 80 on sand enhance when CaCl2 or SDS is added into flushing solution of Tween 80. And the adsorption of Tween 80 on sand increase with the increase of molar fraction of CaCl2 or SDS in mixed flushing solution. And adsorption amount of Tween 80 on sand also enhance when SDS is added into sand firstly. The effects of mixing ratios and addition order of lignosulphonates on adsorption of Tween 80 were considered. The results show that with the increase of molar fraction of lignosulphonates in mixing flushing solution, adsorption amount of Tween 80 on sand decrease. The adsorption amount of Tween 80 reduce 20%-75% due to the exist of ammonium lignosulphonate is superior to sodium lignosulphonate (10%-60%) when mix the lignosulphonates-Tween 80 at the total mass ratios of 1:10, while the adsorption amount of Tween 80 reduce 70%-90% at the total mass ratios of 1:2. Lignosulphonates added into sand firstly is more efficient than that together. Therefore,use of lignosulphonates as a preflush can reduce the adsorption of surfactants on sand and is a better method to applied in in situ flushing.

An Improved Manufacturing Approach for Discrete Silicon Microneedle Arrays with Tunable Height-Pitch Ratio

Directory of Open Access Journals (Sweden)

Renxin Wang

2016-10-01

Full Text Available Silicon microneedle arrays (MNAs have been widely studied due to their potential in various transdermal applications. However, discrete MNAs, as a preferred choice to fabricate flexible penetrating devices that could adapt curved and elastic tissue, are rarely reported. Furthermore, the reported discrete MNAs have disadvantages lying in uniformity and height-pitch ratio. Therefore, an improved technique is developed to manufacture discrete MNA with tunable height-pitch ratio, which involves KOH-dicing-KOH process. The detailed process is sketched and simulated to illustrate the formation of microneedles. Furthermore, the undercutting of convex mask in two KOH etching steps are mathematically analyzed, in order to reveal the relationship between etching depth and mask dimension. Subsequently, fabrication results demonstrate KOH-dicing-KOH process. {321} facet is figured out as the surface of octagonal pyramid microneedle. MNAs with diverse height and pitch are also presented to identify the versatility of this approach. At last, the metallization is realized via successive electroplating.

A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

International Nuclear Information System (INIS)

Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

2009-01-01

Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

PIXE analysis of sand and soil from Ulaanbaatar and Karakurum, Mongolia

Science.gov (United States)

Markwitz, A.; Barry, B.; Shagjjamba, D.

2008-09-01

Twenty-one sand and soil samples were collected at the surface from 22 to 25 June 2007 at sampling sites from Ulaanbaatar to Karakurum, Mongolia. The sand samples were collected from constantly changing sand dunes which may still contain salt from prehistoric oceans. The dry sand and soil samples were processed for PIXE and PIGE analyses. A clear division between soils and sand become apparent in the silicon results. Concentrations of all bulk elements in human habitation samples and of Si, Al, K and Fe in dry lake/flood plain samples are similar to those in the soils and sands. Among elements which could be regarded as being at trace concentrations the average S concentration in the soils is 0.9 g kg-1 whereas it is not detected in the sand samples. Zinc and Cu concentrations are both higher in the soils than the sands and are strongly correlated. A surprising presence of uranium at a concentration of 350 mg kg-1 was detected in the PIXE measurement on one of the dry lake samples. Gamma spectrometry confirmed the presence of U in this sample and also at a lower level in a sample from the lake shore, but in none of the other samples. Further, the gamma spectrometry showed that 238U decay products were present only at a level corresponding to about 3 mg kg-1 U for a system in radioactive equilibrium, a figure which is typical for U in the earth's crust. Disequilibria between 238U and its decay products occur naturally but such a high degree of separation at high concentration would be unique if confirmed. PIXE and PIGE measurements of these samples highlight the difficulty in correlating trace element measurements with occurrence of indicators of sea salt in air particulate samples.

Applications in the oil sands industry for Particlear{sup R} silica microgel

Energy Technology Data Exchange (ETDEWEB)

Moffett, B. [DuPont Chemical Solutions Enterprise, Wilmington, DE (United States)

2009-07-01

This presentation demonstrated the use of Particlear{sup R} silica microgel in the oil sands industry. The silica-based coagulant is an amorphous silicon dioxide microgel solution. The surface area of a football field can be obtained using 2.7 grams of the substance. The coagulation mechanism is achieved by charge neutralization and inter-particle bridging. The microgel is manufactured at the point of use from commodity chemicals, water, and carbon dioxide (CO{sub 2}). Applications for the microgel include potable water treatment, paper retention, and animal processing wastewater. In the oil sands industry, Particlear{sup R} can be used in tailings flocculation, thickened tailings drying, steam assisted gravity drainage (SAGD) water treatment, and enhanced bitumen recovery. It was concluded that the microgel can be used in many oil sands processing and liquid-solid separation processes in order to remove dissolved solids and organics and increase the rate of solids dewatering. tabs., figs.

K West Basin Sand Filter Backwash Sample Analysis

Energy Technology Data Exchange (ETDEWEB)

Fiskum, Sandra K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Smoot, Margaret R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Coffey, Deborah S. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Pool, Karl N. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2016-03-01

in the insoluble solids; less than 1% of other gamma-emitters (i.e., ¹³⁷Cs, ^154/155Eu, and ²⁴¹Am) were present in the insoluble solids. Aliquots of the acid digestate were analyzed directly using gamma energy analysis (GEA) and after separations for ²³⁸Pu, ^239+240Pu, ²³⁷Np, and ²⁴¹Am radioisotopes using alpha energy analysis (AEA). The ⁹⁰Sr was measured by liquid scintillation counting (LSC) on the Sr-separated fraction. The plutonium isotopic distribution of the acid digestate was analyzed following Pu separations by thermal ionization mass spectrometry (TIMS). A table summarizes the results for the primary and duplicate samples. The ^239+240Pu concentration (µCi/g dry) relative to ⁹⁰Sr and to ¹³⁷Cs concentrations (µCi/g dry) was examined. The K West Basin sludge has a ^239+240Pu/⁹⁰Sr ranging from 0.1 to 1.2 and the ^239+240Pu/¹³⁷Cs ratio ranging from 0.10 to 0.47. In contrast, the sand filter backwash solids ^239+240Pu/⁹⁰Sr ratio was 10.6 and the ^239+240Pu/¹³⁷Cs ratio was 2.0. The ratio differences indicate a relative enhancement of the Pu concentration in the sand filter solids relative to the ¹³⁷Cs and ⁹⁰Sr sludge concentrations currently in the K West Basin. A dose-to-curie radioisotope evaluation of the sand filter waste form may need to consider this dissimilarity.

The effect of the gas-liquid density ratio on the liquid film thickness in vertical upward annular flow

International Nuclear Information System (INIS)

Mori, Shoji; Okuyama, Kunito

2010-01-01

Annular two phase flow is encountered in many industrial equipments, including flow near nuclear fuel rods in boiling water reactor (BWR). Especially, disturbance waves play important roles in the pressure drop, the generation of entrainments, and the dryout of the liquid film. Therefore, it is important to clarify the behavior of disturbance waves and base film. However, most of the previous studies have been performed under atmospheric pressure conditions that provide the properties of liquid and gas which are significantly different from those of a BWR. Therefore, the effect of properties in gas and liquid on liquid film characteristics should be clarified. In this paper we focus on the effect of gas-liquid density ratio on liquid film thickness characteristics. The experiments have been conducted at four density ratio conditions (ρ L /ρ G =763, 451, 231, and 31). As a result, it was found that liquid film thickness characteristics including the effect of liquid/gas density ratios were well correlated with a gas Weber number and the liquid Reynolds number in the wide range of experimental conditions (ρ L /ρ G : 31-763, We: 10-1800, Re L : 500-2200). (author)

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Assessment of relationships between novel inflammatory markers and presence and severity of preeclampsia: Epicardial fat thickness, pentraxin-3, and neutrophil-to-lymphocyte ratio.

Science.gov (United States)

Cakmak, Huseyin Altug; Dincgez Cakmak, Burcu; Abide Yayla, Cigdem; Inci Coskun, Ebru; Erturk, Mehmet; Keles, Ibrahim

2017-08-01

The aim of this study was to evaluate the relation of three new inflammatory markers with presence and severity of preeclampsia and to compare the predictive values of all markers for presence of this setting. In this study, a total of 100 consecutive pregnants with a diagnosis of preeclampsia and 40 healthy pregnants between October 2014 and April 2015 were included. Epicardial fat tissue was calculated by two-dimensional transthoracic echocardiography, and pentraxin-3 and neutrophil-to-lymphocyte ratio were measured by using an enzyme-linked immunosorbent assay method and routine blood count analysis, respectively. Epicardial fat thickness (p preeclampsia as compared to the healthy pregnants. Furthermore, epicardial fat thickness (p = 0.002), pentraxin-3 (p preeclampsia compared to mild preeclampsia. In the multivariate analysis, epicardial fat thickness (p = 0.013), pentraxin-3 (p = 0.04), and neutrophil-to-lymphocyte ratio (p preeclampsia after adjusting for other risk factors. Epicardial fat thickness, neutrophil-to-lymphocyte ratio, and pentraxin-3 are important markers that provide an additional information beyond that provided by conventional methods in predicting presence and severity of preeclampsia.

Electroplated thick-film cobalt platinum permanent magnets

International Nuclear Information System (INIS)

Oniku, Ololade D.; Qi, Bin; Arnold, David P.

2016-01-01

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

Science.gov (United States)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Design, development and tests of high-performance silicon vapor chamber

International Nuclear Information System (INIS)

Cai, Qingjun; Chen, Bing-chung; Tsai, Chialun

2012-01-01

This paper presents a novel triple stack process to develop an all-silicon thermal ground plane (TGP) vapor chamber that enables fabrication of compact, large scale, low thermal expansion coefficient mismatch and high-performance heat transfer devices. The TGP vapor chamber is formed through bonding three etched silicon wafers. On both the top and bottom wafers, microscale and high aspect ratio wick structures are etched for liquid transport. The 1.5 mm thick middle layer contains the cavities for vapor flow. To achieve hermetic seal, glass frit with four sealing rings, approximately 300 µm wide and 30 µm thick, is used to bond the edges and supporting posts. For experimental evaluations, 3 mm × 38 mm × 38 mm TGP vapor chambers are developed. The volume density of the heat transfer device is approximately 1.5 × 10 3 kg m −3 . Measurement of mass loss and stability studies of heat transfer indicates that the vapor chamber system is hermetically sealed. Using ethanol as the operating liquid, high heat transfer performance is demonstrated. Effective thermal conductivity reaches over 2500 W m −1  ⋅ K −1 . Under high g environment, experimental results show good liquid transport capabilities of the wick structures. (paper)

Design, development and tests of high-performance silicon vapor chamber

Science.gov (United States)

Cai, Qingjun; Chen, Bing-chung; Tsai, Chialun

2012-03-01

This paper presents a novel triple stack process to develop an all-silicon thermal ground plane (TGP) vapor chamber that enables fabrication of compact, large scale, low thermal expansion coefficient mismatch and high-performance heat transfer devices. The TGP vapor chamber is formed through bonding three etched silicon wafers. On both the top and bottom wafers, microscale and high aspect ratio wick structures are etched for liquid transport. The 1.5 mm thick middle layer contains the cavities for vapor flow. To achieve hermetic seal, glass frit with four sealing rings, approximately 300 µm wide and 30 µm thick, is used to bond the edges and supporting posts. For experimental evaluations, 3 mm × 38 mm × 38 mm TGP vapor chambers are developed. The volume density of the heat transfer device is approximately 1.5 × 103 kg m-3. Measurement of mass loss and stability studies of heat transfer indicates that the vapor chamber system is hermetically sealed. Using ethanol as the operating liquid, high heat transfer performance is demonstrated. Effective thermal conductivity reaches over 2500 W m-1 ṡ K-1. Under high g environment, experimental results show good liquid transport capabilities of the wick structures.

Elastic stability of thick auxetic plates

International Nuclear Information System (INIS)

Lim, Teik-Cheng

2014-01-01

Auxetic materials and structures exhibit a negative Poisson’s ratio while thick plates encounter shear deformation, which is not accounted for in classical plate theory. This paper investigates the effect of a negative Poisson’s ratio on thick plates that are subjected to buckling loads, taking into consideration the shear deformation using Mindlin plate theory. Using a highly accurate shear correction factor that allows for the effect of Poisson’s ratio, the elastic stability of circular and square plates are evaluated in terms of dimensionless parameters, namely the Mindlin-to-Kirchhoff critical buckling load ratio and Mindlin critical buckling load factors. Results for thick square plates reveal that both parameters increase as the Poisson’s ratio becomes more negative. In the case of thick circular plates, the Mindlin-to-Kirchhoff critical buckling load ratios and the Mindlin critical buckling load factors increase and decrease, respectively, as the Poisson’s ratio becomes more negative. The results obtained herein show that thick auxetic plates behave as thin conventional plates, and therefore suggest that the classical plate theory can be used to evaluate the elastic stability of thick plates if the Poisson’s ratio of the plate material is sufficiently negative. The results also suggest that materials with highly negative Poisson’s ratios are recommended for square plates, but not circular plates, that are subjected to buckling loads. (paper)

Experimental study of liquid-immersion III–V multi-junction solar cells with dimethyl silicon oil under high concentrations

International Nuclear Information System (INIS)

Xin, Ganchao; Wang, Yiping; Sun, Yong; Huang, Qunwu; Zhu, Li

2015-01-01

Highlights: • Electrical performance of MJ solar cells immersed by silicon oil was studied under 500×. • Theoretical cell photocurrent losses caused by silicon oil absorption were estimated. • Cell performance changes operated in silicon oil (1.0–30.0 mm) were analyzed. • Critical silicon oil thickness on top of MJ solar cells was estimated to be 6.3 mm. - Abstract: In order to better apply direct liquid-immersion cooling (LIC) method in temperature control of solar cells in high concentrating photovoltaic (CPV) systems, electrical characteristics of GaInP/GaInAs/Ge triple-junction solar cells immersed in dimethyl silicon oil of 1.0–30.0 mm thickness were studied experimentally under 500 suns and 25 °C. Theoretical photocurrent losses caused by spectrum transmittance decrease from spectral absorption of silicon oil were estimated for three series sub-cells, and an in-depth analysis of the electrical performances changes of the operated cell in silicon oil was performed. Compared with cell performances without liquid-immersion, the conversion efficiency and the maximum output power of the immersed solar cell in silicon oil of 1.0 mm thickness has increased from 39.567% and 19.556 W to 40.572% and 20.083 W respectively. However, the cell electrical performances decrease with increasing silicon oil thickness in the range of 1.0–30.0 mm, and the efficiency and the maximum output power of the cell have become less than those without liquid-immersion when the silicon oil thickness exceeds 6.3 mm

Re-usage of waste foundry sand in high-strength concrete.

Science.gov (United States)

Guney, Yucel; Sari, Yasin Dursun; Yalcin, Muhsin; Tuncan, Ahmet; Donmez, Senayi

2010-01-01

In this study, the potential re-use of waste foundry sand in high-strength concrete production was investigated. The natural fine sand is replaced with waste foundry sand (0%, 5%, 10%, and 15%). The findings from a series of test program has shown reduction in compressive and tensile strengths, and the elasticity modulus which is directly related to waste foundry inclusion in concrete. Nevertheless the concrete with 10% waste foundry sand exhibits almost similar results to that of the control one. The slump and the workability of the fresh concrete decreases with the increase of the waste foundry sand ratio. Although the freezing and thawing significantly reduces the mechanical and physical properties of the concrete. The obtained results satisfies the acceptable limits set by the American Concrete Institute (ACI). 2010 Elsevier Ltd. All rights reserved.

INFLUENCE OF THE SILICON INTERLAYER ON DIAMOND-LIKE CARBON FILMS DEPOSITED ON GLASS SUBSTRATES

Directory of Open Access Journals (Sweden)

Deiler Antonio Lima Oliveira

2012-06-01

Full Text Available Diamond-like carbon (DLC films as a hard protective coating have achieved great success in a diversity of technological applications. However, adhesion of DLC films to substrates can restrict their applications. The influence of a silicon interlayer in order to improve DLC adhesion on glass substrates was investigated. Amorphous silicon interlayer and DLC films were deposited using plasma enhanced chemical vapor deposition from silane and methane, respectively. The bonding structure, transmittance, refraction index, and adherence of the films were also evaluated regarding the thickness of the silicon interlayer. Raman scattering spectroscopy did not show any substantial difference in DLC structure due to the interlayer thickness of the silicon. Optical measurements showed a sharp decrease of transmittance in the ultra-violet region caused by the fundamental absorption of the light. In addition, the absorption edge of transmittance shifted toward longer wavelength side in the ultra-violet region as the thickness of the silicon interlayer increased. The tribological results showed an increase of DLC adherence as the silicon interlayer increased, which was characterized by less cracks around the grooves.

Silicon (100)/SiO2 by XPS

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Provenance and recycling of Arabian desert sand

Science.gov (United States)

Garzanti, Eduardo; Vermeesch, Pieter; Andò, Sergio; Vezzoli, Giovanni; Valagussa, Manuel; Allen, Kate; Kadi, Khalid A.; Al-Juboury, Ali I. A.

2013-05-01

This study seeks to determine the ultimate origin of aeolian sand in Arabian deserts by high-resolution petrographic and heavy-mineral techniques combined with zircon U-Pb geochronology. Point-counting is used here as the sole method by which unbiased volume percentages of heavy minerals can be obtained. A comprehensive analysis of river and wadi sands from the Red Sea to the Bitlis-Zagros orogen allowed us to characterize all potential sediment sources, and thus to quantitatively constrain provenance of Arabian dune fields. Two main types of aeolian sand can be distinguished. Quartzose sands with very poor heavy-mineral suites including zircon occupy most of the region comprising the Great Nafud and Rub' al-Khali Sand Seas, and are largely recycled from thick Lower Palaeozoic quartzarenites with very minor first-cycle contributions from Precambrian basement, Mesozoic carbonate rocks, or Neogene basalts. Instead, carbonaticlastic sands with richer lithic and heavy-mineral populations characterize coastal dunes bordering the Arabian Gulf from the Jafurah Sand Sea of Saudi Arabia to the United Arab Emirates. The similarity with detritus carried by the axial Tigris-Euphrates system and by transverse rivers draining carbonate rocks of the Zagros indicates that Arabian coastal dunes largely consist of far-travelled sand, deposited on the exposed floor of the Gulf during Pleistocene lowstands and blown inland by dominant Shamal northerly winds. A dataset of detrital zircon U-Pb ages measured on twelve dune samples and two Lower Palaeozoic sandstones yielded fourteen identical age spectra. The age distributions all show a major Neoproterozoic peak corresponding to the Pan-African magmatic and tectonic events by which the Arabian Shield was assembled, with minor late Palaeoproterozoic and Neoarchean peaks. A similar U-Pb signature characterizes also Jafurah dune sands, suggesting that zircons are dominantly derived from interior Arabia, possibly deflated from the Wadi al

Iron oxide shell coating on nano silicon prepared from the sand for lithium-ion battery application

Science.gov (United States)

Furquan, Mohammad; Vijayalakshmi, S.; Mitra, Sagar

2018-05-01

Elemental silicon, due to its high specific capacity (4200 mAh g-1) and non-toxicity is expected to be an attractive anode material for Li-ion battery. But its huge expansion volume (> 300 %) during charging of battery, leads to pulverization and cracking in the silicon particles and causes sudden failure of the Li-ion battery. In this work, we have designed yolk-shell type morphology of silicon, prepared from carbon coated silicon nanoparticles soaked in aqueous solution of ferric nitrate and potassium hydroxide. The soaked silicon particles were dried and finally calcined at 800 °C for 30 minutes. The product obtained is deprived of carbon and has a kind of yolk-shell morphology of nano silicon with iron oxide coating (Si@Iron oxide). This material has been tested for half-cell lithium-ion battery configuration. The discharge capacity is found to be ≈ 600 mAh g-1 at a current rate of 1.0 A g-1 for 200 cycles. It has shown a stable performance as anode for Li-ion battery application.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

Environmental Impacts of Sand Exploitation. Analysis of Sand Market

Directory of Open Access Journals (Sweden)

Marius Dan Gavriletea

2017-06-01

Full Text Available Sand is an indispensable natural resource for any society. Despite society’s increasing dependence on sand, there are major challenges that this industry needs to deal with: limited sand resources, illegal mining, and environmental impact of sand mining. The purpose of this paper is twofold: to present an overview of the sand market, highlighting the main trends and actors for production, export and import, and to review the main environmental impacts associated with sand exploitation process. Based on these findings, we recommend different measures to be followed to reduce negative impacts. Sand mining should be done in a way that limits environmental damage during exploitation and restores the land after mining operations are completed.

Intermontane eolian sand sheet development, Upper Tulum Valley, central-western Argentina

Directory of Open Access Journals (Sweden)

Patrick Francisco Fuhr Dal' Bó

Full Text Available ABSTRACTThe intermontane Upper Tulum eolian sand sheet covers an area of ca. 125 km² at north of the San Juan Province, central-western Argentina. The sand sheet is currently an aggrading system where vegetation cover, surface cementation and periodic flooding withhold the development of dunes with slipfaces. The sand sheet surface is divided into three parts according to the distribution of sedimentary features, which reflects the variation in sediment budget, water table level and periodic flooding. The central sand sheet part is the main area of eolian deposition and is largely stabilized by vegetation. The sedimentary succession is 4 m thick and records the vertical interbedding of eolian and subaqueous deposits, which have been deposited for at least 3.6 ky with sedimentation rates of 86.1 cm/ky. The construction of the sand sheet is associated with deflation of the sand-graded debris sourced by San Juan alluvial fan, which is available mainly in drier fall-winter months where water table is lower and wind speeds are periodically above the threshold velocity for sand transport. The accumulation of sedimentary bodies occurs in a stabilized eolian system where vegetation cover, thin mud veneers and surface cementation are the main agents in promoting accumulation. The preservation of the sand sheet accumulations is enabled by the progressive creation of the accommodation space in a tectonically active basin and the continuous burial of geological bodies favored by high rates of sedimentation.

Permeability Tests on Silkeborg Sand No. 0000

DEFF Research Database (Denmark)

Lund, Willy; Jakobsen, Kim Parsberg

on the characteristics of the soil matrix, the permeability is determined for different void ratios. All tests are performed on reconstituted specimens of Silkeborg Sand No. 0000. The permeability is determined by use of a falling head apparatus. The apparatus, test procedures and the analysis method are described......The flow through porous media plays an important role in various engineering disciplines, as for example in ground water hydrology and soil mechanics. In the present study the permeability is determined for a fine, saturated sand. As the flow through a porous media strongly depends...

Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

DEFF Research Database (Denmark)

Stöhr, Frederik; Michael-Lindhard, Jonas; Hübner, Jörg

2015-01-01

This article describes the realization of complex high-aspect ratio silicon structures with feature dimensions from 100 lm to 100nm by deep reactive ion etching using the Bosch process. As the exact shape of the sidewall profiles can be crucial for the proper functioning of a device, the authors...... of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall...

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Origin, Extent, and Thickness of Quaternary Geologic Units in the Willamette Valley, Oregon

Science.gov (United States)

O'Connor, Jim E.; Sarna-Wojcicki, Andrei M.; Wozniak, Karl C.; Polette, Danial J.; Fleck, Robert J.

2001-01-01

Stratigraphic and chronologic information collected for Quaternary deposits in the Willamette Valley, Oregon, provides a revised stratigraphic framework that serves as a basis for a 1:250,000-scale map, as well as for thickness estimates of widespread Quaternary geologic units. We have mapped 11 separate Quaternary units that are differentiated on the basis of stratigraphic, topographic, pedogenic, and hydrogeologic properties. In summation, these units reflect four distinct episodes in the Quaternary geologic development of the Willamette Valley: 1) Fluvial sands and gravels that underlie terraces flanking lowland margins and tributary valleys were probably deposited between 2.5 and 0.5 million years ago. They are the oldest widespread surficial Quaternary deposits in the valley. Their present positions and preservation are undoubtedly due to postdepositional tectonic deformation - either by direct tectonic uplift of valley margins, or by regional tectonic controls on local base level. 2) Tertiary and Quaternary excavation or tectonic lowering of the Willamette Valley accommodated as much as 500 m (meters) of lacustrine and fluvial fill. Beneath the lowland floor, much of the upper 10 to 50 m of fill is Quaternary sand and gravel deposited by braided channel systems in subhorizontal sheets 2 to 10 m thick. These deposits grade to gravel fans 40 to 100 m thick where major Cascade Range rivers enter the valley and are traced farther upstream as much thinner valley trains of coarse gravel. The sand and gravel deposits have ages that range from greater than 420,000 to about 12,000 years old. A widely distributed layer of sand and gravel deposited at about 12 ka (kiloannum, thousands of years before the present) is looser and probably more permeable than older sand and gravel. Stratigraphic exposures and drillers' logs indicate that this late Pleistocene unit is mostly between 5 and 20 m thick where it has not been subsequently eroded by the Willamette River and its

An Investigation into the Use of Manufactured Sand as a 100% Replacement for Fine Aggregate in Concrete

Directory of Open Access Journals (Sweden)

Martins Pilegis

2016-06-01

Full Text Available Manufactured sand differs from natural sea and river dredged sand in its physical and mineralogical properties. These can be both beneficial and detrimental to the fresh and hardened properties of concrete. This paper presents the results of a laboratory study in which manufactured sand produced in an industry sized crushing plant was characterised with respect to its physical and mineralogical properties. The influence of these characteristics on concrete workability and strength, when manufactured sand completely replaced natural sand in concrete, was investigated and modelled using artificial neural networks (ANN. The results show that the manufactured sand concrete made in this study generally requires a higher water/cement (w/c ratio for workability equal to that of natural sand concrete due to the higher angularity of the manufactured sand particles. Water reducing admixtures can be used to compensate for this if the manufactured sand does not contain clay particles. At the same w/c ratio, the compressive and flexural strength of manufactured sand concrete exceeds that of natural sand concrete. ANN proved a valuable and reliable method of predicting concrete strength and workability based on the properties of the fine aggregate (FA and the concrete mix composition.

An Investigation into the Use of Manufactured Sand as a 100% Replacement for Fine Aggregate in Concrete.

Science.gov (United States)

Pilegis, Martins; Gardner, Diane; Lark, Robert

2016-06-02

Manufactured sand differs from natural sea and river dredged sand in its physical and mineralogical properties. These can be both beneficial and detrimental to the fresh and hardened properties of concrete. This paper presents the results of a laboratory study in which manufactured sand produced in an industry sized crushing plant was characterised with respect to its physical and mineralogical properties. The influence of these characteristics on concrete workability and strength, when manufactured sand completely replaced natural sand in concrete, was investigated and modelled using artificial neural networks (ANN). The results show that the manufactured sand concrete made in this study generally requires a higher water/cement (w/c) ratio for workability equal to that of natural sand concrete due to the higher angularity of the manufactured sand particles. Water reducing admixtures can be used to compensate for this if the manufactured sand does not contain clay particles. At the same w/c ratio, the compressive and flexural strength of manufactured sand concrete exceeds that of natural sand concrete. ANN proved a valuable and reliable method of predicting concrete strength and workability based on the properties of the fine aggregate (FA) and the concrete mix composition.

Does the ratio and thickness of prevertebral soft tissue provide benefit in blunt cervical spine injury?

Science.gov (United States)

Shiau, J-P; Chin, C-C; Yeh, C-N; Chen, J-F; Lee, S-T; Fang, J-F; Liao, C-C

2013-06-01

Although many reports advocate computed tomography (CT) as the initial surveillance tool for occult cervical spine injury (CSI) at the emergency department (ED), the role of a lateral cervical spine radiograph (LCSX) has still not been replaced. We hypothesized that the increased width of the prevertebral soft tissue on an LCSX provides helpful information for selecting the high-risk patients who need to be evaluated with more accurate diagnostic tools. This was a retrospective and consecutive series of injured patients requiring cervical spine evaluation who were first imaged with three-view plain films at the ED. The prevertebral soft tissue thickness (PVST) and ratio of prevertebral soft tissue thickness to the cervical vertebrae diameter (PVST ratio) were calculated on the LCSX. Suspicion of CSI was confirmed by either CT or magnetic resonance imaging (MRI) scans. A total of 826 adult trauma patients requiring cervical spine evaluation were enrolled. The C3 PVST and PVST ratio were significantly different between patients with or without upper cervical area injury (UCAI, 8.64 vs. 5.49 mm, and 0.394 vs. 0.276, respectively), and, likewise, the C6 PVST and PVST ratio for patients with or without lower cervical area injury (LCAI, 16.89 vs. 14.66 mm, and 0.784 vs. 0.749, respectively). The specificity was greater than 90 % in predicting UCAI and LCAI when combining these two parameters. This method maximizes the usefulness of LCSX during the initial assessment of a conscious patient with blunt head and neck injury, especially for the identification of high-risk patients requiring prompt CT or MRI; on the other hand, it prevents the overuse of these high-cost imaging studies as initial diagnostic tools.

Decontamination of Uranium-Contaminated Soil Sand Using Supercritical CO2 with a TBP–HNO3 Complex

Directory of Open Access Journals (Sweden)

Kwangheon Park

2015-09-01

Full Text Available An environmentally friendly decontamination process for uranium-contaminated soil sand is proposed. The process uses supercritical CO2 as the cleaning solvent and a TBP–HNO3 complex as the reagent. Four types of samples (sea sand and coarse, medium, and fine soil sand were artificially contaminated with uranium. The effects of the amount of the reagent, sand type, and elapsed time after the preparation of the samples on decontamination were examined. The extraction ratios of uranium in all of the four types of sand samples were very high when the time that elapsed after preparation was less than a few days. The extraction ratio of uranium decreased in the soil sand with a higher surface area as the elapsed time increased, indicating the possible formation of chemisorbed uranium on the surface of the samples. The solvent of supercritical CO2 seemed to be very effective in the decontamination of soil sand. However, the extraction of chemisorbed uranium in soil sand may need additional processes, such as the application of mechanical vibration and the addition of bond-breaking reagents.

On the nature of structural disorder in calcium silicate hydrates with a calcium/silicon ratio similar to tobermorite

Energy Technology Data Exchange (ETDEWEB)

Grangeon, Sylvain, E-mail: S.Grangeon@brgm.fr [BRGM, 3, Avenue Claude Guillemin, 45060 Orléans Cedex 2 (France); Claret, Francis; Lerouge, Catherine [BRGM, 3, Avenue Claude Guillemin, 45060 Orléans Cedex 2 (France); Warmont, Fabienne [CRMD, UMR 6619 – CNRS, 1b rue de la férollerie, 45071 Orléans Cedex 2 (France); Sato, Tsutomu; Anraku, Sohtaro [Laboratory of Environmental Geology, Research Group of Geoenvironmental/Engineering Division of Solid Waste, Resources and Geoenvironmental/Engineering Graduate School of Engineering, Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628 (Japan); Numako, Chiya [Faculty of Integrated Arts and Sciences, The University of Tokushima, 1-1, Minami-Josanjima, Tokushima, 770-8502 (Japan); Linard, Yannick [ANDRA, Centre de Meuse/Haute Marne, 55290 Bure (France); Lanson, Bruno [ISTerre, Grenoble University, CNRS, F-38041 Grenoble (France)

2013-10-15

Four calcium silicate hydrates (C-S-H) with structural calcium/silicon (Ca/Si) ratios ranging from 0.82 ± 0.02 to 0.87 ± 0.02 were synthesized at room temperature, 50, 80, and 110 °C. Their structure was elucidated by collating information from electron probe micro-analysis, transmission electron microscopy, extended X-ray absorption fine structure spectroscopy, and powder X-ray diffraction (XRD). A modeling approach specific to defective minerals was used because sample turbostratism prevented analysis using usual XRD refinement techniques (e.g. Rietveld analysis). It is shown that C-S-H with Ca/Si ratio of ∼ 0.8 are structurally similar to nano-crystalline turbostratic tobermorite, a naturally occurring mineral. Their structure thus consists of sheets of calcium atoms in 7-fold coordination, covered by ribbons of silicon tetrahedra with a dreierketten (wollastonite-like) organization. In these silicate ribbons, 0.42 Si per bridging tetrahedron are missing. Random stacking faults occur systematically between successive layers (turbostratic stacking). Layer-to-layer distance is equal to 11.34 Å. Crystallites have a mean size of 10 nm in the a–b plane, and a mean number of 2.6–2.9 layers stacked coherently along the c* axis.

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Directory of Open Access Journals (Sweden)

Wei Yuan Wong

2017-01-01

Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Science.gov (United States)

Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

2017-11-01

Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Effect of Partial Replacement of Sand With Quarry Dust on the ...

African Journals Online (AJOL)

This work investigated the effect of partial replacement of sand with quarry dust on the compressive strength, flexural strength, split tensile strength and water absorption of sandcrete blocks. River sand was replaced with quarry dust at percentages ranging from 0 to 40 at cement/combined aggregate ratio of 1: 6. The blocks ...

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

Science.gov (United States)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kukushkin, S.A. [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation); Osipov, A.V., E-mail: Andrey.V.Osipov@gmail.com [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation)

2017-05-01

This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. In the proposed hydraulic model, the dependences of the film thickness both on the gas pressure and time have been calculated. It was shown that not only the qualitative but also quantitative correspondence between theoretical and experimental results takes place. As one would expect, due to the Einstein relation, at short growth times the drift model coincides with the diffusion one. Consequences of this drift mechanism of epitaxial film growing are discussed. - Graphical abstract: This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. - Highlights: • It is established that the greater pressure, the smaller is the reaction rate. • The reaction product prevents penetration of the reagent into a reaction zone. • For description the hydraulic model of crystal lattice channels is developed. • Theoretical results for polytropic

10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

Science.gov (United States)

Rafí, J. M.; Pellegrini, G.; Quirion, D.; Hidalgo, S.; Godignon, P.; Matilla, O.; Juanhuix, J.; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, P.

2017-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick) and bulk silicon substrates. Four-quadrant diodes implementing different design parameters as well as auxiliary test structures (single diodes and MOS capacitors) are studied. An extensive electrical characterization, including current-voltage (I-V) and capacitance-voltage (C-V) techniques, is carried out on non-irradiated and gamma-irradiated devices up to 100 Mrad doses. Special attention is devoted to the study of radiation-induced charge build-up in diode interquadrant isolation dielectric, as well as its impact on device interquadrant resistance. Finally, the devices have been characterized with an 8 keV laboratory X-ray source at 108 ph/s and in BL13-XALOC ALBA Synchroton beamline with 1011 ph/s and energies from 6 to 16 keV . Sensitivity, spatial resolution and uniformity of the devices have been evaluated.

Performance tests of developed silicon strip detector by using a 150 GeV electron beam

International Nuclear Information System (INIS)

Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

2008-01-01

We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

Electroplated thick-film cobalt platinum permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

2016-10-15

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

Niobium nitride Josephson junctions with silicon and germanium barriers

International Nuclear Information System (INIS)

Cukauskas, E.J.; Carter, W.L.

1988-01-01

Niobium nitride based junctions with silicon, germanium, and composite silicon/germanium barriers were fabricated and characterized for several barrier compositions. The current-voltage characteristics were analyzed at several temperatures using the Simmons model and numerical integration of the WKB approximation for the average barrier height and effective thickness. The zero voltage conductance was measured from 1.5 K to 300 K and compared to the Mott hopping conductivity model and the Stratton tunneling temperature dependence. Conductivity followed Mott conductivity at temperatures above 60 K for junctions with less than 100 angstrom thick barriers

Feasibility of conversion electron spectrometry using a Peltier-cooled silicon drift detector

International Nuclear Information System (INIS)

Perajarvi, K.; Turunen, J.; Ihantola, S.; Pollanen, R.; Siiskonen, T.; Toivonen, H.; Kamarainen, V.; Pomme, S.

2014-01-01

A Peltier-cooled silicon drift detector was successfully applied for conversion electron spectrometry. The energy resolution of the detector for 45 keV electrons was 0.50 keV (FWHM). The approximate thickness of the dead layer was determined to be 140 ± 20 nm Si equivalent. The relative efficiency of the detector was verified to be approximately constant in the energy range of 17-75 keV. This is concordant with the high transparency of the thin dead layer and the sufficient thickness of the detector (450 μm) to stop the electrons. The detector is suitable for use in plutonium analysis of chemically prepared samples. Moreover, it was demonstrated that conversion electron spectrometry is better than alpha spectrometry in preserving its capability to determine the 240 Pu/ 239 Pu isotopic ratio as a function of sample thickness. The investigated measurement technique can be considered a promising new tool in safeguards, complementary to existing methods. (author)

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

Science.gov (United States)

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Graphene as a transparent electrode for amorphous silicon-based solar cells

International Nuclear Information System (INIS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-01-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

Graphene as a transparent electrode for amorphous silicon-based solar cells

Science.gov (United States)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Graphene as a transparent electrode for amorphous silicon-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

2015-06-28

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Sand intake by laying hens and its effect on egg production parameters.

Science.gov (United States)

van der Meulen, J; Kwakernaak, C; Kan, C A

2008-08-01

Soil intake may be the most prominent source of environmental contaminants for free range and organic hens, but there are no quantitative data concerning soil intake by domestic hens. Consumption of soil of 14-32 g a day can be estimated from literature, but such a dilution of nutrient intake seems incompatible with high productivity. In this study laying hens were fed pelleted diets with 0%, 10%, 20%, 25% and 30% of sand addition to determine its effect on productivity. Feed intake, feed and nutrient (feed minus sand) conversion ratio, egg production, egg weight and body weight gain were measured over a 4-week period. Acid insoluble ash concentration in the faeces was measured to determine the accuracy of estimating the soil ingestion by the soil-ingestion equation for wildlife as a way to determine soil ingestion of free range and organic hens under practical circumstances. The hens were able to compensate the dilution of the diet with 20%, 25% and 30% of sand by increasing their feed intake. Feed intake increased significantly and feed to egg conversion ratio decreased significantly with increasing sand levels in the diet. The nutrient to egg conversion ratio of the diet without sand tended to be worse than for the diets with sand, presumably due to the total absence of coarse material in the diet. There were no differences in egg production and egg weight between hens fed the different diets but body weight gain was significantly lower for the hens fed the diets with 20%, 25% and 30% of sand. Estimation of sand ingestion was done by the soil-ingestion equation for wildlife. Provided that the actual dry matter digestibility coefficient of the nutrient part of the diet is taken into account, estimating the soil ingestion according to the soil-ingestion equation for wildlife seems an appropriate way to determine soil ingestion for free range and organic hens under practical circumstances.

Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

Science.gov (United States)

Miki, N.; Spearing, S. M.

2003-11-01

Direct wafer bonding of silicon wafers is a promising technology for manufacturing three-dimensional complex microelectromechanical systems as well as silicon-on-insulator substrates. Previous work has reported that the bond quality declines with increasing surface roughness, however, this relationship has not been quantified. This article explicitly correlates the bond quality, which is quantified by the apparent bonding energy, and the surface morphology via the bearing ratio, which describes the area of surface lying above a given depth. The apparent bonding energy is considered to be proportional to the real area of contact. The effective area of contact is defined as the area sufficiently close to contribute to the attractive force between the two bonding wafers. Experiments were conducted with silicon wafers whose surfaces were roughened by a buffered oxide etch solution (BOE, HF:NH4F=1:7) and/or a potassium hydroxide solution. The surface roughness was measured by atomic force microscopy. The wafers were direct bonded to polished "monitor" wafers following a standard RCA cleaning and the resulting bonding energy was measured by the crack-opening method. The experimental results revealed a clear correlation between the bonding energy and the bearing ratio. A bearing depth of ˜1.4 nm was found to be appropriate for the characterization of direct-bonded silicon at room temperature, which is consistent with the thickness of the water layer at the interface responsible for the hydrogen bonds that link the mating wafers.

Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

Directory of Open Access Journals (Sweden)

Michael Vetter

2016-12-01

Full Text Available The room temperature photoluminescence (PL spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.

An electromagnetic calorimeter for the silicon detector concept

Indian Academy of Sciences (India)

sampling layers – twenty of thickness 5/7X0, followed by ten of thickness 10/7X0. The silicon detectors dominate the cost of our design, so we use simple .... understanding of the cross talk, we are continuing to work on a quantitative model.

The effect of oxide shell thickness on the structural, electronic, and optical properties of Si-SiO{sub 2} core-shell nano-crystals: A (time dependent)density functional theory study

Energy Technology Data Exchange (ETDEWEB)

Nazemi, Sanaz, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir; Soleimani, Ebrahim Asl [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Pourfath, Mahdi, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria); Kosina, Hans [Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria)

2016-04-14

Due to their tunable properties, silicon nano-crystals (NC) are currently being investigated. Quantum confinement can generally be employed for size-dependent band-gap tuning at dimensions smaller than the Bohr radius (∼5 nm for silicon). At the nano-meter scale, however, increased surface-to-volume ratio makes the surface effects dominant. Specifically, in Si-SiO{sub 2} core-shell semiconductor NCs the interfacial transition layer causes peculiar electronic and optical properties, because of the co-existence of intermediate oxidation states of silicon (Si{sup n+}, n = 0–4). Due to the presence of the many factors involved, a comprehensive understanding of the optical properties of these NCs has not yet been achieved. In this work, Si-SiO{sub 2} NCs with a diameter of 1.1 nm and covered by amorphous oxide shells with thicknesses between 2.5 and 4.75 Å are comprehensively studied, employing density functional theory calculations. It is shown that with increased oxide shell thickness, the low-energy part of the optical transition spectrum of the NC is red shifted and attenuated. Moreover, the absorption coefficient is increased in the high-energy part of the spectrum which corresponds to SiO{sub 2} transitions. Structural examinations indicate a larger compressive stress on the central silicon cluster with a thicker oxide shell. Examination of the local density of states reveals the migration of frontier molecular orbitals from the oxide shell into the silicon core with the increase of silica shell thickness. The optical and electrical properties are explained through the analysis of the density of states and the spatial distribution of silicon sub-oxide species.

High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

International Nuclear Information System (INIS)

Chen, L Q; Chan-Park, Mary B; Yan, Y H; Zhang Qing; Li, C M; Zhang Jun

2007-01-01

Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Large volume cryogenic silicon detectors

International Nuclear Information System (INIS)

Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

2009-01-01

We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

Scale-dependent gas hydrate saturation estimates in sand reservoirs in the Ulleung Basin, East Sea of Korea

Science.gov (United States)

Lee, Myung Woong; Collett, Timothy S.

2013-01-01

Through the use of 2-D and 3-D seismic data, several gas hydrate prospects were identified in the Ulleung Basin, East Sea of Korea and thirteen drill sites were established and logging-while-drilling (LWD) data were acquired from each site in 2010. Sites UBGH2–6 and UBGH2–10 were selected to test a series of high amplitude seismic reflections, possibly from sand reservoirs. LWD logs from the UBGH2–6 well indicate that there are three significant sand reservoirs with varying thickness. Two upper sand reservoirs are water saturated and the lower thinly bedded sand reservoir contains gas hydrate with an average saturation of 13%, as estimated from the P-wave velocity. The well logs at the UBGH2–6 well clearly demonstrated the effect of scale-dependency on gas hydrate saturation estimates. Gas hydrate saturations estimated from the high resolution LWD acquired ring resistivity (vertical resolution of about 5–8 cm) reaches about 90% with an average saturation of 28%, whereas gas hydrate saturations estimated from the low resolution A40L resistivity (vertical resolution of about 120 cm) reaches about 25% with an average saturation of 11%. However, in the UBGH2–10 well, gas hydrate occupies a 5-m thick sand reservoir near 135 mbsf with a maximum saturation of about 60%. In the UBGH2–10 well, the average and a maximum saturation estimated from various well logging tools are comparable, because the bed thickness is larger than the vertical resolution of the various logging tools. High resolution wireline log data further document the role of scale-dependency on gas hydrate calculations.

Laser wafering for silicon solar

International Nuclear Information System (INIS)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-01-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Laser wafering for silicon solar.

Energy Technology Data Exchange (ETDEWEB)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

Directory of Open Access Journals (Sweden)

Yang-Shin Lin

2011-01-01

Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

Science.gov (United States)

Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

1975-01-01

Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

Science.gov (United States)

Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

2015-07-24

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

Science.gov (United States)

Ingle, W. M.; Thompson, S. W.; Chaney, R. E. (Inventor)

1979-01-01

A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wight, Daniel Nilsen

2008-07-01

Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.

2015-04-24

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

Dual-side and three-dimensional microelectrode arrays fabricated from ultra-thin silicon substrates

International Nuclear Information System (INIS)

Du, Jiangang; Masmanidis, Sotiris C; Roukes, Michael L

2009-01-01

A method for fabricating planar implantable microelectrode arrays was demonstrated using a process that relied on ultra-thin silicon substrates, which ranged in thickness from 25 to 50 µm. The challenge of handling these fragile materials was met via a temporary substrate support mechanism. In order to compensate for putative electrical shielding of extracellular neuronal fields, separately addressable electrode arrays were defined on each side of the silicon device. Deep reactive ion etching was employed to create sharp implantable shafts with lengths of up to 5 mm. The devices were flip-chip bonded onto printed circuit boards (PCBs) by means of an anisotropic conductive adhesive film. This scalable assembly technique enabled three-dimensional (3D) integration through formation of stacks of multiple silicon and PCB layers. Simulations and measurements of microelectrode noise appear to suggest that low impedance surfaces, which could be formed by electrodeposition of gold or other materials, are required to ensure an optimal signal-to-noise ratio as well a low level of interchannel crosstalk

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Prathap Pathi

2017-01-01

Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

One-cm-thick Si detector at LHe temperature

Energy Technology Data Exchange (ETDEWEB)

Braggio, C. [Dipartimento di Fisica, Universita di Ferrara, Via Saragat 1, 44100 Ferrara (Italy)], E-mail: braggio@pd.infn.it; Bressi, G. [INFN, Sez. di Pavia, Via Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, Sez. di Padova, Via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [Laboratori Nazionali di Legnaro, Via dell' Universita 1, 35020 Legnaro (Italy); Serafin, A. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

2007-10-11

A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events.

One-cm-thick Si detector at LHe temperature

International Nuclear Information System (INIS)

Braggio, C.; Bressi, G.; Carugno, G.; Galeazzi, G.; Serafin, A.

2007-01-01

A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events

Engineering the size and density of silicon agglomerates by controlling the initial surface carbonated contamination

Energy Technology Data Exchange (ETDEWEB)

Borowik, Ł., E-mail: Lukasz.Borowik@cea.fr [CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Chevalier, N.; Mariolle, D.; Martinez, E.; Bertin, F.; Chabli, A.; Barbé, J.-C. [CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

2013-04-01

Actually, thermally induced thin-films dewetting silicon in the silicon-on-insulator is a way to obtain silicon agglomerates with a size and a density fixed by the silicon film thickness. In this paper we report a new method to monitor both the size and the density of the Si agglomerates thanks to the deposition of a carbon-like layer. We show that using a 5-nm thick layer of silicon and additional ≤1-nm carbonated layer; we obtain agglomerates sizes ranging from 35 nm to 60 nm with respectively an agglomerate density ranging from 38 μm{sup −2} to 18 μm{sup −2}. Additionally, for the case of strained silicon films an alternative dewetting mechanism can be induced by monitoring the chemical composition of the sample surface.

BENTONITE-QUARTZ SAND AS THE BACKFILL MATERIALS ON THE RADIOACTIVE WASTE REPOSITORY

Directory of Open Access Journals (Sweden)

Raharjo Raharjo

2010-06-01

Full Text Available An investigation of the contribution of quartz sand in the bentonite mixture as the backfill materials on the shallow land burial of radioactive waste has been done. The experiment objective is to determine the effect of quartz sand in a bentonite mixture with bentonite particle sizes of -20+40, -40+60, and -60+80 mesh on the retardation factor and the uranium dispersion in the simulation of uranium migration in the backfill materials. The experiment was carried out by the fixed bed method in the column filled by the bentonite mixture with a bentonite-to-quartz sand weight percent ratio of 0/100, 25/75, 50/50, 75/25, and 100/0 on the water saturated condition flown by uranyl nitrate solution at concentration (Co of 500 ppm. The concentration of uranium in the effluents in interval 15 minutes represented as Ct was analyzed by spectrophotometer, then using Co and Ct, retardation factor (R and dispersivity ( were determined. The experiment data showed that the bentonite of -60+80 mesh and the quartz sand of -20+40 mesh on bentonite-to-quartz sand with weight percent ratio of 50/50 gave the highest retardation factor and dispersivity of 18.37 and 0.0363 cm, respectively.   Keywords: bentonite, quartz sand, backfill materials, radioactive waste

Effect of Gamma Irradiation on Polymer Modified White Sand Cement Mortar Composites

International Nuclear Information System (INIS)

Khattab, M.M.

2012-01-01

This study focuses on the substitution effect of standard sand of conventional cement mortar made from ordinary Portland cement (OPC) and standard sand (SS) OPC/SS 1:3; by different ratios of white sand (WS) powder to prepare three types of white sand cement mortar designated as 1OPC:2SS:1WS, 1OPC:1SS:2WS and 1OPC:0SS:3WS. The prepared samples were first cured under tap water for different time intervals namely 3, 7, 28 and 90 days. The effect of addition of 10% styrene-acrylic ester (SAE) as well as the effect of different doses of gamma rays (10, 20, 30 and 50 kGy) on the physicomechanical properties of polymer modified white sand cement mortar specimens also discussed. Compression strength test, total porosity and water absorption percentages were measured according to standard specifications. The obtained data indicated that, the cement mortar samples containing different ratios of white sand have lower values of compressive strength as compared to the conventional cement mortar while, the percentages of total porosity and water absorption increased. On the other hand, the polymer modified mortar specimens showed a noticeably enhancement in the physico-mechanical properties under the effect of gamma-radiation than those of untreated samples. These results were confirmed by scanning electron microscopy (SEM), and thermogravimetric analysis (TGA) studies

Large volume cryogenic silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

2009-12-15

We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Jingnan Tong

2018-02-01

Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Science.gov (United States)

De Cesare, M.; De Cesare, N.; D'Onofrio, A.; Gialanella, L.; Terrasi, F.

2015-04-01

Accelerator Mass Spectrometry (AMS) is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE) in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10-11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E) system with a 16-strip silicon detector (4.9×10-12 just with one strip).

Lithium ion batteries based on nanoporous silicon

Science.gov (United States)

Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

2015-09-22

A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

High coincidence-to-accidental ratio continuous-wave photon-pair generation in a grating-coupled silicon strip waveguide

DEFF Research Database (Denmark)

Guo, Kai; Christensen, Erik Nicolai; Christensen, Jesper Bjerge

2017-01-01

We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber......-to-chip coupling and on-chip suppression of generated spontaneous Raman scattering noise. We measure a minimum heralded second-order correlation of g(H)((2)) (0) = 0.12, demonstrating that our source operates in the single- photon regime with low noise. (C) 2017 The Japan Society of Applied Physics...

Sand transportation and reverse patterns over leeward face of sand dune

Science.gov (United States)

Jiang, Hong; Dun, Hongchao; Tong, Ding; Huang, Ning

2017-04-01

Sand saltation has complex interactions with turbulent flow and dune form. Most models of wind-blown sand consider ideal circumstances such as steady wind velocity and a flat surface, and the bulk of data on wind flow and sand transport over an individual dune has focused mostly on the influence of dune shape or inter-dune space on the wind flow, neglecting the effect of morphology on sand saltation, particularly airflow and sand transportation over the leeward slope. Wind flow structures over the leeward slope of sand dunes have a fundamental influence on the organization of sand dunes. In order to understand sand dune dynamics, lee face airflow and sediment transportation should be paid more attention. Previous field observations could not measure turbulent flow structure well because of the limited observation points and the influence of experiment structure on wind field. In addition, the reverse sand particles over leeward face could not be collected by sand trap in field. Numerous field observations could not measure turbulent flow structure because of the limited observation points and the influence of experimental structures on the wind field. In addition, the reverse transport of sand particles over leeward face could not be collected by sand traps in field. Therefore, this paper aims to investigate the turbulent flow structure and sand transport pattern over the leeward slope. A numerical model of sand saltation over slope terrain is constructed, which also considers the coupling effects between air flow and sand particles. The large eddy simulation method is used to model turbulent flow. Sand transport is simulated by tracking the trajectory of each sand particle. The results show that terrain significantly alters the turbulent air flow structure and wind-blown sand movement, especially over the leeward slope. Here, mass flux increases initially and then decreases with height in the reversed flow region in the direction of wind flow, and the mass flux

A parametric study of laser induced ablation-oxidation on porous silicon surfaces

International Nuclear Information System (INIS)

De Stefano, Luca; Rea, Ilaria; Nigro, M Arcangela; Della Corte, Francesco G; Rendina, Ivo

2008-01-01

We have investigated the laser induced ablation-oxidation process on porous silicon layers having different porosities and thicknesses by non-destructive optical techniques. In particular, the interaction between a low power blue light laser and the porous silicon surfaces has been characterized by variable angle spectroscopic ellipsometry and Fourier transform infrared spectroscopy. The oxidation profiles etched on the porous samples can be tuned as functions of the layer porosity and laser fluence. Oxide stripes of width less than 2 μm and with thicknesses between 100 nm and 5 μm have been produced, depending on the porosity of the porous silicon, by using a 40 x focusing objective

Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Atteq ur Rehman

2014-02-01

Full Text Available Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

Performance of sand and shredded rubber tire mixture as a natural base isolator for earthquake protection

Science.gov (United States)

Bandyopadhyay, Srijit; Sengupta, Aniruddha; Reddy, G. R.

2015-12-01

The performance of a well-designed layer of sand, and composites like layer of sand mixed with shredded rubber tire (RSM) as low cost base isolators, is studied in shake table tests in the laboratory. The building foundation is modeled by a 200 mm by 200 mm and 40 mm thick rigid plexi-glass block. The block is placed in the middle of a 1m by 1m tank filled with sand. The selected base isolator is placed between the block and the sand foundation. Accelerometers are placed on top of the footing and foundation sand layer. The displacement of the footing is also measured by LVDT. The whole setup is mounted on a shake table and subjected to sinusoidal motions with varying amplitude and frequency. Sand is found to be effective only at very high amplitude (> 0.65 g) of motions. The performance of a composite consisting of sand and 50% shredded rubber tire placed under the footing is found to be most promising as a low-cost effective base isolator.

High aspect ratio micro tool manufacturing for polymer replication using mu EDM of silicon, selective etching and electroforming

DEFF Research Database (Denmark)

Tosello, Guido; Bissacco, Giuliano; Tang, Peter Torben

2008-01-01

Mass fabrication of polymer micro components with high aspect ratio micro-structures requires high performance micro tools allowing the use of low cost replication processes such as micro injection moulding. In this regard an innovative process chain, based on a combination of micro electrical di...... discharge machining (mu EDM) of a silicon substrate, electroforming and selective etching was used for the manufacturing of a micro tool. The micro tool was employed for polymer replication by means of the injection moulding process....

Low temperature spalling of silicon: A crack propagation study

Energy Technology Data Exchange (ETDEWEB)

Bertoni, Mariana; Uberg Naerland, Tine; Stoddard, Nathan; Guimera Coll, Pablo

2017-06-08

Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer thickness. It has been suggested before that a strong correlation exists between low crack velocities and a smooth surface, but this correlation has never been shown during a spalling process in silicon. The reason lies in the challenge associated to measuring such velocities. In this contribution, we present a new approach to assess, in real time, the crack velocity as it propagates during a low temperature spalling process. Understanding the relationship between crack velocity and surface roughness during spalling can pave the way to attain full control on the surface quality of the spalled wafer.

Mapping boron in silicon solar cells using electron energy-loss spectroscopy

DEFF Research Database (Denmark)

in the energies of plasmon peaks in the low loss region [5]. We use these approaches to characterize both a thick n-p junction and the 10-nm-thick p-doped layer of a working solar cell. [1] U. Kroll, C. Bucher, S. Benagli, I. Schönbächler, J. Meier, A. Shah, J. Ballutaud, A. Howling, Ch. Hollenstein, A. Büchel, M......Amorphous silicon solar cells typically consist of stacked layers deposited on plastic or metallic substrates making sample preparation for transmission electron microscopy (TEM) difficult. The amorphous silicon layer - the active part of the solar cell - is sandwiched between 10-nm-thick n- and p...... resolution using TEM is highly challenging [3]. Recently, scanning TEM (STEM) combined with electron energy-loss spectroscopy (EELS) and spherical aberration-correction has allowed the direct detection of dopant concentration of 10^20cm-3 in 65-nm-wide silicon devices [4]. Here, we prepare TEM samples...

Large submarine sand-rubble flow on Kilauea volcano, Hawaii

Energy Technology Data Exchange (ETDEWEB)

Fornari, D J [Columbia Univ., Palisades, NY; Moore, J G; Calk, L

1979-05-01

Papa'u seamount on the south submarine slope of Kilauea volcano is a large landslide about 19 km long, 6 km wide, and up to 1 km thick with a volume of about 39 km/sup 3/. Dredge hauls, remote camera photographs, and submersible observations indicate that it is composed primarily of unconsolidated angular glassy basalt sand with scattered basalt blocks up to 1 m in size; no lava flows were seen. Sulfur contents of basalt glass from several places on the sand-rubble flow and nearby areas are low (< 240 ppm), indicating that the clastic basaltic material was all erupted on land. The Papa'u sandrubble flow was emplaced during a single flow event fed from a large near-shore bank of clastic basaltic material which in turn was formed as lava flows from the summit area of Kilauea volcano disintegrated when they entered the sea. The current eruptive output of the volcano suggests that the material in the submarine sand-rubble flow represents about 6000 years of accumulation, and that the flow event occurred several thousand years ago.

Evaluation of a high resolution silicon PET insert module

Energy Technology Data Exchange (ETDEWEB)

Grkovski, Milan, E-mail: milan.grkovski@ijs.si [Jožef Stefan Institute, Ljubljana (Slovenia); Memorial Sloan Kettering Cancer Center, New York, NY (United States); Brzezinski, Karol [IFIC/CSIC, Valencia (Spain); Cindro, Vladimir [Jožef Stefan Institute, Ljubljana (Slovenia); Clinthorne, Neal H. [University of Michigan, Ann Arbor, MI (United States); Kagan, Harris [Ohio State University, Columbus, OH (United States); Lacasta, Carlos [IFIC/CSIC, Valencia (Spain); Mikuž, Marko [Jožef Stefan Institute, Ljubljana (Slovenia); Solaz, Carles [IFIC/CSIC, Valencia (Spain); Studen, Andrej [Jožef Stefan Institute, Ljubljana (Slovenia); Weilhammer, Peter [Ohio State University, Columbus, OH (United States); Žontar, Dejan [Jožef Stefan Institute, Ljubljana (Slovenia)

2015-07-11

Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm{sup 2} pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (2D) geometry with a Jaszczak phantom (rod diameters of 1.2–4.8 mm) filled with {sup 18}F-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm)

Antarctic ice sheet thickness estimation using the horizontal-to-vertical spectral ratio method with single-station seismic ambient noise

Directory of Open Access Journals (Sweden)

P. Yan

2018-03-01

Full Text Available We report on a successful application of the horizontal-to-vertical spectral ratio (H / V method, generally used to investigate the subsurface velocity structures of the shallow crust, to estimate the Antarctic ice sheet thickness for the first time. Using three-component, five-day long, seismic ambient noise records gathered from more than 60 temporary seismic stations located on the Antarctic ice sheet, the ice thickness measured at each station has comparable accuracy to the Bedmap2 database. Preliminary analysis revealed that 60 out of 65 seismic stations on the ice sheet obtained clear peak frequencies (f0 related to the ice sheet thickness in the H / V spectrum. Thus, assuming that the isotropic ice layer lies atop a high velocity half-space bedrock, the ice sheet thickness can be calculated by a simple approximation formula. About half of the calculated ice sheet thicknesses were consistent with the Bedmap2 ice thickness values. To further improve the reliability of ice thickness measurements, two-type models were built to fit the observed H / V spectrum through non-linear inversion. The two-type models represent the isotropic structures of single- and two-layer ice sheets, and the latter depicts the non-uniform, layered characteristics of the ice sheet widely distributed in Antarctica. The inversion results suggest that the ice thicknesses derived from the two-layer ice models were in good concurrence with the Bedmap2 ice thickness database, and that ice thickness differences between the two were within 300 m at almost all stations. Our results support previous finding that the Antarctic ice sheet is stratified. Extensive data processing indicates that the time length of seismic ambient noise records can be shortened to two hours for reliable ice sheet thickness estimation using the H / V method. This study extends the application fields of the H / V method and provides an effective and independent way to measure

An experimental study on pile spacing effects under lateral loading in sand.

Science.gov (United States)

Khari, Mahdy; Kassim, Khairul Anuar; Adnan, Azlan

2013-01-01

Grouped and single pile behavior differs owing to the impacts of the pile-to-pile interaction. Ultimate lateral resistance and lateral subgrade modulus within a pile group are known as the key parameters in the soil-pile interaction phenomenon. In this study, a series of experimental investigation was carried out on single and group pile subjected to monotonic lateral loadings. Experimental investigations were conducted on twelve model pile groups of configurations 1 × 2, 1 × 3, 2 × 2, 3 × 3, and 3 × 2 for embedded length-to-diameter ratio l/d = 32 into loose and dense sand, spacing from 3 to 6 pile diameter, in parallel and series arrangement. The tests were performed in dry sand from Johor Bahru, Malaysia. To reconstruct the sand samples, the new designed apparatus, Mobile Pluviator, was adopted. The ultimate lateral load is increased 53% in increasing of s/d from 3 to 6 owing to effects of sand relative density. An increasing of the number of piles in-group decreases the group efficiency owing to the increasing of overlapped stress zones and active wedges. A ratio of s/d more than 6d is large enough to eliminate the pile-to-pile interaction and the group effects. It may be more in the loose sand.

Selective Synthesis of Manganese/Silicon Complexes in Supercritical Water

Directory of Open Access Journals (Sweden)

Jiancheng Wang

2014-01-01

Full Text Available A series of manganese salts (Mn(NO32, MnCl2, MnSO4, and Mn(Ac2 and silicon materials (silica sand, silica sol, and tetraethyl orthosilicate were used to synthesize Mn/Si complexes in supercritical water using a tube reactor. X-ray diffraction (XRD, X-ray photoelectron spectrometer (XPS, transmission electron microscopy (TEM, and scanning electron microscopy (SEM were employed to characterize the structure and morphology of the solid products. It was found that MnO2, Mn2O3, and Mn2SiO4 could be obtained in supercritical water at 673 K in 5 minutes. The roles of both anions of manganese salts and silicon species in the formation of manganese silicon complexes were discussed. The inorganic manganese salt with the oxyacid radical could be easily decomposed to produce MnO2/SiO2 and Mn2O3/SiO2. It is interesting to found that Mn(Ac2 can react with various types of silicon to produce Mn2SiO4. The hydroxyl groups of the SiO2 surface from different silicon sources enhance the reactivity of SiO2.

Influence of heat input and radius to pipe thickness ratio on the residual stresses in circumferential arc welded pipes of API X46 steels

International Nuclear Information System (INIS)

Hemmatzadeh, Majid; Moshayedi, Hessamoddin; Sattari-Far, Iradj

2017-01-01

The present work aims to study residual stresses caused by circumferentially welding of two similar API X46 steel pipes by means of finite element modeling. Considering the metallurgical phase transformations and through thermal-mechanical uncoupled analysis, the 3D modeling was carried out by SYSWELD software. Materialistic thermal and mechanical properties of all phases were defined in terms of temperature as well as phase transformation properties. Residual stress was measured through hole-drilling method. The obtained results were used to verify the finite element model. By means of full factorial experiment designing method, effects of heat input and radius to pipe thickness ratio on maximum values of hoop and axial residual stresses were investigated. The effect of each factor was studied in 3 levels and by 9 experiments. Results of statistical analysis revealed that increase in heat input and radius-thickness ratio would lead to higher values of maximum hoop and axial residual stresses. However, interactions of high level of heat input and a low level of radius-thickness ratio increased inter-pass temperature and consequently caused a sudden raise in maximum values of residual stresses. - Highlights: • A FEM model was developed to simulate welding considering phase transformations. • The obtained residual stresses were validated by experiments. • Effect of heat input and radius-to-thickness ratio on residual stress were investigated. • Increasing heat input for 100% caused increasing hoop and axial residual stress until 200%. • Interaction of high heat input and low R/t causes a sudden increase in axial residual stresses.

A Silicon SPECT System for Molecular Imaging of the Mouse Brain

OpenAIRE

Shokouhi, Sepideh; Fritz, Mark A.; McDonald, Benjamin S.; Durko, Heather L.; Furenlid, Lars R.; Wilson, Donald W.; Peterson, Todd E.

2007-01-01

We previously demonstrated the feasibility of using silicon double-sided strip detectors (DSSDs) for SPECT imaging of the activity distribution of iodine-125 using a 300-micrometer thick detector. Based on this experience, we now have developed fully customized silicon DSSDs and associated readout electronics with the intent of developing a multi-pinhole SPECT system. Each DSSD has a 60.4 mm × 60.4 mm active area and is 1 mm thick. The strip pitch is 59 micrometers, and the readout of the 102...

Study of thick, nuclear-compensated silicon detectors; Etude des detecteurs epais au silicium compense nucleairement

Energy Technology Data Exchange (ETDEWEB)

Le Coroller, Y. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1964-09-01

A study is made here, from the point of view of the realization and the performance, of thick nuclear-compensated silicon detectors. After recalling the need for compensation and reviewing the existing methods, the author describes in detail the controlled realization of thick detectors by nuclear compensation from the theoretical and experimental points of view. The practical precautions which should be observed are given: control of the homogeneity of the starting material, control of the evolution of the compensation, elimination of parasitic processes. The performances of the detectors obtained are then studied: electrical characteristics (current, life-time) on the one hand, detection and spectrometry of penetrating radiations on the other hand. The results show, that the compensated diodes having an effective thickness of two millimeters operate satisfactorily as detectors for applied voltages of about 500 volts. The resolutions observed are then about 2 per cent for mono-energetic electrons and about 4 per cent for the gamma; they can be improved by the use of a pre-amplifier of very low background noise. (author) [French] Les detecteurs epais au silicium compense nucleairement sont etudies ici du double point de vue realisation et performances. Apres un rappel sur la necessite de la compensation et les procedes existants, la realisation controlee des detecteurs epais par compensation nucleaire est decrite en detail sous l'aspect theorique et l'aspect experimental. On met en evidence les precautions a prendre dans la pratique: controle de l'homogeneite du materiau de base, controle de l'evolution de la compensation, elimination des processus parasites. On etudie ensuite les performances de detecteurs obtenus : caracteristiques electriques (courant, duree de vie) d'une part, d'autre part detection et spectrometrie des rayonnements penetrants. Les resultats montrent que les diodes compensees ayant une epaisseur utile de deux

Study of thick, nuclear-compensated silicon detectors; Etude des detecteurs epais au silicium compense nucleairement

Energy Technology Data Exchange (ETDEWEB)

Le Coroller, Y [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1964-09-01

A study is made here, from the point of view of the realization and the performance, of thick nuclear-compensated silicon detectors. After recalling the need for compensation and reviewing the existing methods, the author describes in detail the controlled realization of thick detectors by nuclear compensation from the theoretical and experimental points of view. The practical precautions which should be observed are given: control of the homogeneity of the starting material, control of the evolution of the compensation, elimination of parasitic processes. The performances of the detectors obtained are then studied: electrical characteristics (current, life-time) on the one hand, detection and spectrometry of penetrating radiations on the other hand. The results show, that the compensated diodes having an effective thickness of two millimeters operate satisfactorily as detectors for applied voltages of about 500 volts. The resolutions observed are then about 2 per cent for mono-energetic electrons and about 4 per cent for the gamma; they can be improved by the use of a pre-amplifier of very low background noise. (author) [French] Les detecteurs epais au silicium compense nucleairement sont etudies ici du double point de vue realisation et performances. Apres un rappel sur la necessite de la compensation et les procedes existants, la realisation controlee des detecteurs epais par compensation nucleaire est decrite en detail sous l'aspect theorique et l'aspect experimental. On met en evidence les precautions a prendre dans la pratique: controle de l'homogeneite du materiau de base, controle de l'evolution de la compensation, elimination des processus parasites. On etudie ensuite les performances de detecteurs obtenus : caracteristiques electriques (courant, duree de vie) d'une part, d'autre part detection et spectrometrie des rayonnements penetrants. Les resultats montrent que les diodes compensees ayant une epaisseur utile de deux millimetres fonctionnent

Effects of Preparation Conditions on the Yield and Embedding Ratio of Vinyl Silicone Oil Microcapsules

Directory of Open Access Journals (Sweden)

Aijie MA

2016-05-01

Full Text Available Self-healing materials could repair themselves without external influences when they are damaged. In this paper, microcapsules are prepared by in-situ polymerization method with vinyl silicone oil as core material, polyurea formaldehyde (PUF as wall material and polyvinyl alcohol as dispersants. The morphology and structure of the microcapsules are tested with scanning electron microscopy (SEM, polarizing microscope（PM）and laser particle analyzer(LPA. Effect of the reaction temperature, stirring speed and PVA concentration on the yield, embedding ratio, particle size and distribution of the microcapsules are studied. Results show that the microcapsules can be successfully prepared by in situ polymerization method. When the reaction temperature was 60℃, the stirring speed 1000 r/min, dispersant concentration 0.1%, the yield and embedding ratio of the microcapsule are 52.5% and 50.1%. The microcapsules prepared have smooth surface, well dispersibility, narrow particle size distribution and the average particle size is 13 μm.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.13026

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Directory of Open Access Journals (Sweden)

Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

Estimated sand and gravel resources of the South Merrimack, Hillsborough County, New Hampshire, 7.5-minute quadrangle

Science.gov (United States)

Sutphin, D.M.; Drew, L.J.; Fowler, B.K.

2006-01-01

A computer methodology is presented that allows natural aggregate producers, local governmental, and nongovernmental planners to define specific locations that may have sand and gravel deposits meeting user-specified minimum size, thickness, and geographic and geologic criteria, in areas where the surficial geology has been mapped. As an example, the surficial geologic map of the South Merrimack quadrangle was digitized and several digital geographic information system databases were downloaded from the internet and used to estimate the sand and gravel resources in the quadrangle. More than 41 percent of the South Merrimack quadrangle has been mapped as having sand and (or) gravel deposited by glacial meltwaters. These glaciofluvial areas are estimated to contain a total of 10 million m3 of material mapped as gravel, 60 million m3 of material mapped as mixed sand and gravel, and another 50 million m3 of material mapped as sand with minor silt. The mean thickness of these areas is about 1.95 meters. Twenty tracts were selected, each having individual areas of more than about 14 acres4 (5.67 hectares) of stratified glacial-meltwater sand and gravel deposits, at least 10-feet (3.0 m) of material above the watertable, and not sterilized by the proximity of buildings, roads, streams and other bodies of water, or railroads. The 20 tracts are estimated to contain between about 4 and 10 million short tons (st) of gravel and 20 and 30 million st of sand. The five most gravel-rich tracts contain about 71 to 82 percent of the gravel resources in all 20 tracts and about 54-56 percent of the sand. Using this methodology, and the above criteria, a group of four tracts, divided by narrow areas sterilized by a small stream and secondary roads, may have the highest potential in the quadrangle for sand and gravel resources. ?? Springer Science+Business Media, LLC 2006.

Influence of ni thickness on oscillation coupling in Cu/Ni multilayers

Energy Technology Data Exchange (ETDEWEB)

Gagorowska, B; Dus-Sitek, M [Institute of Physics, Czestochowa University of Technology, Al. Armii Krajowej 19, 42-200 Czestochowa (Poland)

2007-08-15

The results of investigation of magnetic properties of [Cu/Ni]x100 were presented. Samples were deposited by face-to-face sputtering method onto the silicon substrate, the thickness of Cu layer was constant (d{sub Cu} = 2 nm) and the thickness of Ni layer - variable (1 nm {<=} d{sub Ni} {<=} 6 nm). In Cu/Ni multilayers, for the thickness of Ni layer bigger than 2 nm antiferromagnetic coupling (A-F) were observed, for the thickness of Ni smaller than 2 nm A-F coupling is absent.

Influence of ni thickness on oscillation coupling in Cu/Ni multilayers

International Nuclear Information System (INIS)

Gagorowska, B; Dus-Sitek, M

2007-01-01

The results of investigation of magnetic properties of [Cu/Ni]x100 were presented. Samples were deposited by face-to-face sputtering method onto the silicon substrate, the thickness of Cu layer was constant (d Cu = 2 nm) and the thickness of Ni layer - variable (1 nm ≤ d Ni ≤ 6 nm). In Cu/Ni multilayers, for the thickness of Ni layer bigger than 2 nm antiferromagnetic coupling (A-F) were observed, for the thickness of Ni smaller than 2 nm A-F coupling is absent

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Directory of Open Access Journals (Sweden)

De Cesare M.

2015-01-01

Full Text Available Accelerator Mass Spectrometry (AMS is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10−11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E system with a 16-strip silicon detector (4.9×10−12 just with one strip.

High-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching

Science.gov (United States)

Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Yun; Wong, C.-P.

2018-05-01

High-aspect-ratio (HAR) microstructures on silicon (Si) play key roles in photonics and electromechanical devices. However, it has been challenging to fabricate HAR microstructures with slanting profiles. Here we report successful fabrication of uniform HAR microstructures with controllable slanting angles on (1 0 0)-Si by slanted uniform metal-assisted chemical etching (SUMaCE). The trenches have width of 2 µm, aspect ratio greater than 20:1 and high geometric uniformity. The slanting angles can be adjusted between 2-70° with respect to the Si surface normal. The results support a fundamental hypothesis that under the UMaCE condition, the preferred etching direction is along the normal of the thin film catalysts, regardless of the relative orientation of the catalyst to Si substrates or the crystalline orientation of the substrates. The SUMaCE method paves the way to HAR 3D microfabrication with arbitrary slanting profiles inside Si.

Screen printed thick film based pMUT arrays

DEFF Research Database (Denmark)

Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain

2008-01-01

This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

Science.gov (United States)

Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

2016-02-02

Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

Metallization of DNA on silicon surface

International Nuclear Information System (INIS)

Puchkova, Anastasiya Olegovna; Sokolov, Petr; Petrov, Yuri Vladimirovich; Kasyanenko, Nina Anatolievna

2011-01-01

New simple way for silver deoxyribonucleic acid (DNA)-based nanowires preparation on silicon surface was developed. The electrochemical reduction of silver ions fixed on DNA molecule provides the forming of tightly matched zonate silver clusters. Highly homogeneous metallic clusters have a size about 30 nm. So the thickness of nanowires does not exceed 30–50 nm. The surface of n-type silicon monocrystal is the most convenient substrate for this procedure. The comparative analysis of DNA metallization on of n-type silicon with a similar way for nanowires fabrication on p-type silicon, freshly cleaved mica, and glass surface shows the advantage of n-type silicon, which is not only the substrate for DNA fixation but also the source of electrons for silver reduction. Images of bound DNA molecules and fabricated nanowires have been obtained using an atomic force microscope and a scanning ion helium microscope. DNA interaction with silver ions in a solution was examined by the methods of ultraviolet spectroscopy and circular dichroism.

Relationship between macular ganglion cell complex thickness and macular outer retinal thickness: a spectral-domain optical coherence tomography study.

Science.gov (United States)

Kita, Yoshiyuki; Kita, Ritsuko; Takeyama, Asuka; Anraku, Ayako; Tomita, Goji; Goldberg, Ivan

2013-01-01

To assess the relationship between macular ganglion cell complex and macular outer retinal thicknesses. Case-control study. Forty-two normal eyes and 91 eyes with primary open-angle glaucoma were studied. Spectral-domain optical coherence tomography (RTVue-100) was used to measure the macular ganglion cell complex and macular outer retinal thickness. Ganglion cell complex to outer retinal thickness ratio was also calculated. The relationships between the ganglion cell complex and outer retinal thicknesses and between the ganglion cell complex to outer retinal thickness ratio and outer retinal thickness were evaluated. There was a positive correlation between ganglion cell complex and outer retinal thicknesses in the normal group and the glaucoma group (r = 0.53, P variation in the outer retinal thickness. Therefore, when determining the ganglion cell complex, it seems necessary to consider the outer retinal thickness as well. We propose the ratio as a suitable parameter to account for individual variations in outer retinal thickness. © 2013 The Authors. Clinical and Experimental Ophthalmology © 2013 Royal Australian and New Zealand College of Ophthalmologists.

Influence of sand to coarse aggregate ratio on the interfacial bond strength of steel fibers in concrete for nuclear power plant

International Nuclear Information System (INIS)

Kim, Jung Jin; Kim, Dong Joo; Kang, Su Tae; Lee, Jang Hwa

2012-01-01

Highlights: ► The final goal is to develop a fiber reinforced concrete for containment buildings. ► We investigated the effect of S/a on the bond strength of steel fibers. ► Deformed steel fibers produced much higher interfacial bond strength. ► As S/a increased, twisted fiber showed a significant enhancement in bond strength. ► Smooth and hooked fiber showed no clear difference as S/a increased. - Abstract: The interfacial bond strength of three high strength steel fibers (smooth, hooked, and twisted fiber) in concrete of nuclear power plants was investigated to develop fiber reinforced concrete for containment building. Sand to aggregate ratio (S/a) was adjusted to compensate reduction in the workability due to adding fibers; the influence of S/a ratio on the interfacial bond strength was investigated. As the S/a ratio increased from 0.444 to 0.615, the bond strength of twisted steel fiber was significantly improved while smooth and hooked steel fiber showed no clear difference. The different sensitivity according to the S/a ratio results from the different pullout mechanism: twisted steel fiber generates more mechanical interaction during fiber pullout at the interface between fiber and matrix than smooth and hooked fibers. The microscopic observation by scanning electron microscope back-scattered electrons images discovered lower porosity at the interfacial transition zone between fiber and concrete with higher S/a ratio.

Influence of sand to coarse aggregate ratio on the interfacial bond strength of steel fibers in concrete for nuclear power plant

Energy Technology Data Exchange (ETDEWEB)

Kim, Jung Jin, E-mail: jjinslow@nate.com [Department of Civil and Environmental Engineering, SeJong University, 98 Gunja-Dong, Gwangjin-Gu, Seoul 143-747 (Korea, Republic of); Kim, Dong Joo, E-mail: djkim75@sejong.ac.kr [Department of Civil and Environmental Engineering, SeJong University, 98 Gunja-Dong, Gwangjin-Gu, Seoul 143-747 (Korea, Republic of); Kang, Su Tae, E-mail: stkang@daegu.ac.kr [Department of Civil Engineering, Daegu University, 201 Daegudae-ro, Jillyang, Gyeongsan, Gyeongbuk 712-714 (Korea, Republic of); Lee, Jang Hwa, E-mail: jhlee@kict.re.kr [Korea Institute of Construction Technology, 2311 Daewha-Dong, Ilsan-Gu, Goyang-Si, Gyeonggi-Do 411-712 (Korea, Republic of)

2012-11-15

Highlights: Black-Right-Pointing-Pointer The final goal is to develop a fiber reinforced concrete for containment buildings. Black-Right-Pointing-Pointer We investigated the effect of S/a on the bond strength of steel fibers. Black-Right-Pointing-Pointer Deformed steel fibers produced much higher interfacial bond strength. Black-Right-Pointing-Pointer As S/a increased, twisted fiber showed a significant enhancement in bond strength. Black-Right-Pointing-Pointer Smooth and hooked fiber showed no clear difference as S/a increased. - Abstract: The interfacial bond strength of three high strength steel fibers (smooth, hooked, and twisted fiber) in concrete of nuclear power plants was investigated to develop fiber reinforced concrete for containment building. Sand to aggregate ratio (S/a) was adjusted to compensate reduction in the workability due to adding fibers; the influence of S/a ratio on the interfacial bond strength was investigated. As the S/a ratio increased from 0.444 to 0.615, the bond strength of twisted steel fiber was significantly improved while smooth and hooked steel fiber showed no clear difference. The different sensitivity according to the S/a ratio results from the different pullout mechanism: twisted steel fiber generates more mechanical interaction during fiber pullout at the interface between fiber and matrix than smooth and hooked fibers. The microscopic observation by scanning electron microscope back-scattered electrons images discovered lower porosity at the interfacial transition zone between fiber and concrete with higher S/a ratio.

Soil mixing of stratified contaminated sands.

Science.gov (United States)

Al-Tabba, A; Ayotamuno, M J; Martin, R J

2000-02-01

Validation of soil mixing for the treatment of contaminated ground is needed in a wide range of site conditions to widen the application of the technology and to understand the mechanisms involved. Since very limited work has been carried out in heterogeneous ground conditions, this paper investigates the effectiveness of soil mixing in stratified sands using laboratory-scale augers. This enabled a low cost investigation of factors such as grout type and form, auger design, installation procedure, mixing mode, curing period, thickness of soil layers and natural moisture content on the unconfined compressive strength, leachability and leachate pH of the soil-grout mixes. The results showed that the auger design plays a very important part in the mixing process in heterogeneous sands. The variability of the properties measured in the stratified soils and the measurable variations caused by the various factors considered, highlighted the importance of duplicating appropriate in situ conditions, the usefulness of laboratory-scale modelling of in situ conditions and the importance of modelling soil and contaminant heterogeneities at the treatability study stage.

Method of working thick beds

Energy Technology Data Exchange (ETDEWEB)

Giezynski, A; Bialasik, A; Krawiec, A; Wylenzek, A

1981-12-30

The patented method of working thick coal beds in layers consists of creating in the collapsed rocks or from the fill material a bearing rock plate by strengthening these rocks with a hardening composition made of wastes of raw material, resin and water injected into the rock through wells. The difference in the suggestion is that through boreholes drilled in the lower part of the rock roofing on a previously calculated network, a solution is regularly injected which consists of dust wastes obtained in electric filters during production of clinker from mineral raw material in a quantity of 60-70% by volume, wastes of open-hearth production in a quantity of 15-20% and natural sand in a quantity of 15-20%, and water in a quantity of 35-55% of the volume of mineral components. In the second variant, the injected compostion contains: wastes from production of clinker 55-57%, open-hearth wastes 20-23%, natural sand 12-14%, asbestos fine particles 7-8% and water 38-45% of the volume of mineral components. In addition, the difference is that in the boreholes drilled in the coal block directly under the roofing, a composition is injected which consists of natural sand and catalyst in the form of powder and individually supplied liquid synthetic resin in a quantity of 3-5% by weight in relation to the sand. The hardening time with normal temperature is 1-1.5 h, after which strength is reached of 80 kg-f/cm/sup 2/.

Reclaimability of the spent sand mixture – sand with bentonite – sand with furfuryl resin

Directory of Open Access Journals (Sweden)

J. Dańko

2011-04-01

Full Text Available Introduction of new binding materials and new technologies of their hardening in casting moulds and cores production requires theapplication of reclamation methods adequate to their properties as well as special devices realizing tasks. The spent sands circulationsystem containing the same kind of moulding and core sands is optimal from the point of view of the expected reclamation results.However, in the face of a significant variability of applied technologies and related to them various reclamation methods, the need - of theobtained reclamation products assessment on the grounds of systematic criteria and uniform bases – arises, with a tendency of indicatingwhich criteria are the most important for the given sand system. The reclaimability results of the mixture of the spent moulding sand withGeko S bentonite and the spent core sand with the Kaltharz 404U resin hardened by acidic hardener 100 T3, are presented in the paper.Investigations were performed with regard to the estimation of an influence of core sands additions (10 –25% on the reclaimed materialquality. Dusts and clay content in the reclaim, its chemical reaction (pH and ignition loss were estimated. The verification of the reclaiminstrumental assessment was performed on the basis of the technological properties estimation of moulding sand with bentonite, where the reclaimed material was used as a matrix.

Seedless electroplating on patterned silicon

NARCIS (Netherlands)

Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

2006-01-01

Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate

Biomolecule detection using a silicon nanoribbon: accumulation mode versus inversion mode

International Nuclear Information System (INIS)

Elfstroem, Niklas; Linnros, Jan

2008-01-01

Silicon nanoribbons were fabricated using standard optical lithography from silicon on insulator material with top silicon layer thicknesses of 100, 60 and 45 nm. Electrically these work as Schottky-barrier field-effect transistors and, depending on the substrate voltage, electron or hole injection is possible. The current through the nanoribbon is extremely sensitive to charge changes at the oxidized top surface and can be used for biomolecule detection in a liquid. We show that for detection of streptavidin molecules the response is larger in the accumulation mode than in the inversion mode, although not leading to higher detection sensitivity due to increased noise. The effect is attributed to the location in depth of the conducting channel, which for holes is closer to the screened surface charges of the biomolecules. Furthermore, the response increases for decreasing silicon thickness in both the accumulation mode and the inversion mode. The results are verified qualitatively and quantitatively through a two-dimensional simulation model on a cross section along the nanoribbon device

Study of Surface Wettability Change of Unconsolidated Sand Using Diffuse Reflectance Infrared Fourier Transform Spectroscopy and Thermogravimetric Analysis.

Science.gov (United States)

Gómora-Herrera, Diana; Navarrete Bolaños, Juan; Lijanova, Irina V; Olivares-Xometl, Octavio; Likhanova, Natalya V

2018-04-01

The effects exerted by the adsorption of vapors of a non-polar compound (deuterated benzene) and a polar compound (water) on the surface of Ottawa sand and a sample of reservoir sand (Channel), which was previously impregnated with silicon oil or two kinds of surfactants, (2-hydroxyethyl) trimethylammonium oleate (HETAO) and (2-hydroxyethyl)trimethylammonium azelate (HETAA), were studied by diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and thermogravimetric analysis (TGA). The surface chemistry of the sandstone rocks was elucidated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX). Terminal surface groups such as hydroxyls can strongly adsorb molecules that interact with these surface groups (surfactants), resulting in a wettability change. The wettability change effect suffered by the surface after treating it with surfactants was possible to be detected by the DRIFTS technique, wherein it was observed that the surface became more hydrophobic after being treated with silicon oil and HETAO; the surface became more hydrophilic after treating it with HETAA.

Appraisal of the tight sands potential of the Sand Wash and Great Divide Basins

International Nuclear Information System (INIS)

1993-08-01

The volume of future tight gas reserve additions is difficult to estimate because of uncertainties in the characterization and extent of the resource and the performance and cost-effectiveness of stimulation and production technologies. Ongoing R ampersand D by industry and government aims to reduce the risks and costs of producing these tight resources, increase the certainty of knowledge of their geologic characteristics and extent, and increase the efficiency of production technologies. Some basins expected to contain large volumes of tight gas are being evaluated as to their potential contribution to domestic gas supplies. This report describes the results of one such appraisal. This analysis addresses the tight portions of the Eastern Greater Green River Basin (Sand Wash and Great Divide Subbasins in Northwestern Colorado and Southwestern Wyoming, respectively), with respect to estimated gas-in-place, technical recovery, and potential reserves. Geological data were compiled from public and proprietary sources. The study estimated gas-in-place in significant (greater than 10 feet net sand thickness) tight sand intervals for six distinct vertical and 21 areal units of analysis. These units of analysis represent tight gas potential outside current areas of development. For each unit of analysis, a ''typical'' well was modeled to represent the costs, recovery and economics of near-term drilling prospects in that unit. Technically recoverable gas was calculated using reservoir properties and assumptions about current formation evaluation and extraction technology performance. Basin-specific capital and operating costs were incorporated along with taxes, royalties and current regulations to estimate the minimum required wellhead gas price required to make the typical well in each of unit of analysis economic

MOS structures containing silicon nanoparticles for memory device applications

International Nuclear Information System (INIS)

Nedev, N; Zlatev, R; Nesheva, D; Manolov, E; Levi, Z; Brueggemann, R; Meier, S

2008-01-01

Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO x (x = 1.15) and RF sputtering of SiO 2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability

Eastern Scheldt Sand, Baskarp Sand No. 15

DEFF Research Database (Denmark)

Andersen, A. T; Madsen, E. B.; Schaarup-Jensen, A. L.

The present data report contains data from 13 drained triaxial tests, performed on two different sand types in the Soil Mechanics Laboratory at Aalborg University in March, 1997. Two tests have been performed on Baskarp Sand No. 15, which has already ken extensively tested in the Soil Mechanics...... Laboratory. The remaining 11 triaxial tests have ben performed on Eastern Scheldt Sand, which is a material not yet investigated at the Soil Mechanics Laboratory. In the first pari of this data report, the characteristics of the two sand types in question will be presented. Next, a description...... will described. In this connection, the procedure for preparation of the soil specimens will be presented, and the actual performance of the tests will be briefly outlined. Finally, the procedure for processing of the measurements from the laboratory in order to obtain usable data will be described. The final...

An Experimental Study on Pile Spacing Effects under Lateral Loading in Sand

Science.gov (United States)

Khari, Mahdy; Kassim, Khairul Anuar; Adnan, Azlan

2013-01-01

Grouped and single pile behavior differs owing to the impacts of the pile-to-pile interaction. Ultimate lateral resistance and lateral subgrade modulus within a pile group are known as the key parameters in the soil-pile interaction phenomenon. In this study, a series of experimental investigation was carried out on single and group pile subjected to monotonic lateral loadings. Experimental investigations were conducted on twelve model pile groups of configurations 1 × 2, 1 × 3, 2 × 2, 3 × 3, and 3 × 2 for embedded length-to-diameter ratio l/d = 32 into loose and dense sand, spacing from 3 to 6 pile diameter, in parallel and series arrangement. The tests were performed in dry sand from Johor Bahru, Malaysia. To reconstruct the sand samples, the new designed apparatus, Mobile Pluviator, was adopted. The ultimate lateral load is increased 53% in increasing of s/d from 3 to 6 owing to effects of sand relative density. An increasing of the number of piles in-group decreases the group efficiency owing to the increasing of overlapped stress zones and active wedges. A ratio of s/d more than 6d is large enough to eliminate the pile-to-pile interaction and the group effects. It may be more in the loose sand. PMID:24453900

Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

CERN Document Server

Bergmann, Benedikt; Caicedo, Ivan; Kierstead, James; Takai, Helio; Frojdh, Erik

2016-01-01

In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. The data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Interface properties of the amorphous silicon/crystalline silicon heterojunction photovoltaic cell

Science.gov (United States)

Halliop, Basia

Amorphous-crystalline silicon (a-Si:H/c-Si) heterojunctions have the potential of being a very high efficiency silicon photovoltaic platform technology with accompanying cost and energy budget reductions. In this research a heterojunction cell structure based on a-Si:H deposited using a DC saddle field plasma enhanced vapour deposition (DCSF PECVD) technique is studied, and the a-Si:H/c-Si and indium tin oxide/a-Si:H interfaces are examined using several characterization methods. Photocarrier radiometry (PCR) is used for the first time to probe the a-Si:H/c-Si junction. PCR is demonstrated as a carrier lifetime measurement technique -- specifically, confirming carrier lifetimes above 1 ms for 1-5 Ocm phosphorous-doped c-Si wafers passivated on both sides with 30 nm of i-a-Si:H. PCR is also used to determine surface recombination velocity and mobility, and to probe recombination at the a-Si:H/c-Si interface, distinguishing interface recombination from recombination within the a-Si:H layer or at the a-Si:H surface. A complementary technique, lateral conductivity is applied over a temperature range of 140 K to 430 K to construct energy band diagrams of a-Si:H/c-Si junctions. Boron doped a-Si:H films on glass are shown to have activation energies of 0.3 to 0.35 eV, tuneable by adjusting the diborane to silane gas ratio during deposition. Heterojunction samples show evidence of a strong hole inversion layer and a valence band offset of approximately 0.4 eV; carrier concentration in the inversion layer is reduced in p-a-Si:H/i-a-Si:H/ c-Si structures as intrinsic layer thickness increases, while carrier lifetime is increased. The indium tin oxide/amorphous silicon interface is also examined. Optimal ITO films were prepared with a sheet resistance of 17.3 O/[special character omitted] and AM1.5 averaged transmittance of 92.1%., for a film thickness of approximately 85 nm, using temperatures below 200°C. Two different heat treatments are found to cause crystallization of

Thickness measurement of multilayered samples by Kα/Kβ or Lα/Lβ X-ray ratios

Energy Technology Data Exchange (ETDEWEB)

Cesareo, Roberto; Brunetti, Antonio, E-mail: roberto.cesareo@gmail.com, E-mail: brunetti@uniss.it [Universita di Sassari (UNISS), Sassari, (Italy); Assis, Joaquim T. de, E-mail: rcbarros@pq.cnpq.br [Universidade do Estado do Rio de Janeiro (UERJ), Rio de Janeiro, RJ (Brazil)

2013-07-01

Objects composed of two or more layers are relatively common among industrial and electronic materials, works of art and common tools. For example plated objects (with zinc, nickel, silver, gold) are composed of two or three layers, a painting is generally composed of several layers, a decorated vase is composed of two or three layers, just as a stone, marble or bronze covered with a protective layer. In this paper a general method and some results are described to reconstruct structure and to determine thicknesses of multilayered material, when energy dispersive X-ray fluorescence is employed to analyze the material: the X-ray ratios of Kα/Kβ and Lα/Lβ for elements present in the multilayered samples are employed. (author)

Thickness measurement of multilayered samples by Kα/Kβ or Lα/Lβ X-ray ratios

International Nuclear Information System (INIS)

Cesareo, Roberto; Brunetti, Antonio; Assis, Joaquim T. de

2013-01-01

Objects composed of two or more layers are relatively common among industrial and electronic materials, works of art and common tools. For example plated objects (with zinc, nickel, silver, gold) are composed of two or three layers, a painting is generally composed of several layers, a decorated vase is composed of two or three layers, just as a stone, marble or bronze covered with a protective layer. In this paper a general method and some results are described to reconstruct structure and to determine thicknesses of multilayered material, when energy dispersive X-ray fluorescence is employed to analyze the material: the X-ray ratios of Kα/Kβ and Lα/Lβ for elements present in the multilayered samples are employed. (author)

An Experimental Study of Portland Cement and Superfine Cement Slurry Grouting in Loose Sand and Sandy Soil

Directory of Open Access Journals (Sweden)

Weijing Yao

2018-04-01

Full Text Available Grouting technology is widely applied in the fields of geotechnical engineering in infrastructure. Loose sand and sandy soil are common poor soils in tunnel and foundation treatments. It is necessary to use superfine cement slurry grouting in the micro-cracks of soil. The different effectiveness of Portland cement slurry and superfine cement slurry in sandy soil by the laboratory grouting experiment method were presented in this paper. The grouting situations of superfine cement slurry injected into sand and sandy soil were explored. The investigated parameters were the dry density, wet density, moisture content, internal friction angle, and cohesion force. The results show that the consolidation effect of superfine cement is better than that of Portland cement due to the small size of superfine cement particles. The superfine cement can diffuse into the sand by infiltration, extrusion, and splitting. When the water–cement ratio of superfine cement slurry is less than 2:1 grouting into loose sand, the dry and wet density decrease with the increase in the water–cement ratio, while the moisture content and cohesive force gradually increase. When the water–cement ratio of superfine cement slurry is 1:1 grouting into loose sand and sandy soil, the dry density, wet density, and cohesive force of loose sand are larger than those of sandy soil. The results of the experiment may be relevant for engineering applications.

Effects of pore design on mechanical properties of nanoporous silicon

International Nuclear Information System (INIS)

Winter, Nicholas; Becton, Matthew; Zhang, Liuyang; Wang, Xianqiao

2017-01-01

Nanoporous silicon has been emerging as a powerful building block for next-generation sensors, catalysts, transistors, and tissue scaffolds. The capability to design novel devices with desired mechanical properties is paramount to their reliability and serviceability. In order to bring further resolution to the highly variable mechanical characteristics of nanoporous silicon, here we perform molecular dynamics simulations to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling laws versus the features of interior ligaments. Results show that pore shape and pattern dictate stress accumulation inside the designed structure, leading to the corresponding failure signature, such as stretching-dominated, bending-dominated, or stochastic failure signatures, in nanoporous silicon. The nanostructure of the material is also seen to drive or mute size effects such as “smaller is stronger” and “smaller is ductile”. This investigation provides useful insight into the behavior of nanoporous silicon and how one might leverage its promising applications. - Graphical abstract: Molecular dynamics simulations are performed to study the effects of ligament thickness, relative density, and pore geometry/orientation on the mechanical properties of nanoporous silicon, thereby determining its Young's modulus, ultimate strength, and toughness as well as the scaling trends versus the features of interior ligaments.

Effect of annealing and oxide layer thickness on doping profiles shape of ''through-oxide'' implanted P+ ions in textured silicon

International Nuclear Information System (INIS)

El-Dessouki, M.S.; Galloni, R.

1987-10-01

Phosphorous ions at energies of 60+100 KeV, and doses (4+5)x10 15 atom/cm 2 have been implanted randomly through SiO 2 layers into textured silicon crystals. The penetration profiles of the P + ions have been determined by means of differential sheet resistivity and Hall-effect, together with the anodic oxidation stripping technique. The effect of the oxide layer thickness, annealing temperature on the junction properties has been studied. The damage produced by implantation, has also been investigated using transmission electron microscope (TEM). From the mobility measurements of the free carriers as a function of depth through the junction, two minima have been observed in through oxide implanted samples. The one nearer to the Si-SiO 2 interface (at about 200A from the interface) was related to the damage produced by the recoil oxygen atoms from the oxide layer into silicon. The deeper minimum is lying at ∼ 0.2μm from the interface and was attributed to the damage produced by the implanted P + ions, which caused clusters and defect loops after annealing. This damage was observed through TEM photographs. The optimum conditions for producing shallow junction without losing much of the implanted P + ions through the oxide layer were estimated. (author). 22 refs, 7 figs, 1 tab

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

Science.gov (United States)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Silicon-based metallic micro grid for electron field emission

International Nuclear Information System (INIS)

Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

2012-01-01

A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

Undrained Cyclic Behaviour of Dense Frederikshavn Sand

DEFF Research Database (Denmark)

Nielsen, Søren Kjær; Ibsen, Lars Bo; Sørensen, Kris Wessel

2013-01-01

A modified contour diagram is created for the Frederikshavn Sand in the undrained case for a relative density of ID = 80 %. It can be used to estimate the number of cycles to failure for a given combination of pore pressure, average and cyclic load ratio. The diagram is based on a series of undra...

Effect of Coating-thickness on the formability of hot dip aluminized steel

International Nuclear Information System (INIS)

Awan, G.H.; Ahmed, F.; Hasan, F.

2008-01-01

The influence of coating thickness on the formability and ductility of hot-dip-aluminized steel has been determined using a 3-point bend test and optical metallography. The ductility / formability was estimated from the 3-point bend test wherein the angle of bend at which the cracks start to appear on the surface of the aluminized sheet during bending, was taken as an index of the formability / ductility. It was observed that as the amount of silicon in the aluminising melt was gradually increased the measured ductility of the sheet sample also increased. Metallographic examination has shown that as the amount of silicon in the aluminising melt was increased the thickness of the intermediate compound layer, between the outer aluminum coat and the substrate steel, decreased. It was thus indicated from these experiments that the formability / ductility of the sheet was inversely related to the thickness of the interlayer. (author)

The role of water content in triboelectric charging of wind-blown sand.

Science.gov (United States)

Gu, Zhaolin; Wei, Wei; Su, Junwei; Yu, Chuck Wah

2013-01-01

Triboelectric charging is common in desert sandstorms and dust devils on Earth; however, it remains poorly understood. Here we show a charging mechanism of sands with the adsorbed water on micro-porous surface in wind-blown sand based on the fact that water content is universal but usually a minor component in most particle systems. The triboelectric charging could be resulted due to the different mobility of H(+)/OH(-) between the contacting sands with a temperature difference. Computational fluid dynamics (CFD) and discrete element method (DEM) were used to demonstrate the dynamics of the sand charging. The numerically simulated charge-to-mass ratios of sands and electric field strength established in wind tunnel agreed well with the experimental data. The charging mechanism could provide an explanation for the charging process of all identical granular systems with water content, including Martian dust devils, wind-blown snow, even powder electrification in industrial processes.

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Science.gov (United States)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Amorphous silicon based radiation detectors

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

1991-07-01

We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

Bearing capacity of Skirt circular footing on sand

Directory of Open Access Journals (Sweden)

Amr Z. EL Wakil

2013-09-01

Full Text Available Skirts are used to improve the bearing capacity of shallow footings on sandy soil by constraining the soil beneath and containing the plastic flow of soil. They are used as an alternative to deep foundations in soils with low strength at the surface. As there has been available little work studying the performance of skirted foundation, we are performing eighteen laboratory experiments on circular steel footings of different diameters and different skirt lengths. The aim of these experiments is to shed some lights on the effects of skirts on the bearing capacity of shallow footings. The effects of skirt length and the relative density of sand on the ultimate load attained were investigated. From the accomplished laboratory tests, it was found that skirts improve appreciably the sustainability of shallow footings to applied load as they increase the ultimate load of shallow footings by some up to 6.25 times for the current study conditions and variables. The performance of skirted footing depends upon the relative density of sand and on the skirt length to footing diameter ratio. Skirts are more beneficial in case of footings on loose sand than in case of medium and dense sand.

Sol-gel bonding of silicon wafers

International Nuclear Information System (INIS)

Barbe, C.J.; Cassidy, D.J.; Triani, G.; Latella, B.A.; Mitchell, D.R.G.; Finnie, K.S.; Bartlett, J.R.; Woolfrey, J.L.; Collins, G.A.

2005-01-01

Low temperature bonding of silicon wafers was achieved using sol-gel technology. The initial sol-gel chemistry of the coating solution was found to influence the mechanical properties of the resulting bonds. More precisely, the influence of parameters such as the alkoxide concentration, water-to-alkoxide molar ratio, pH, and solution aging on the final bond morphologies and interfacial fracture energy was studied. The thickness and density of the sol-gel coating were characterised using ellipsometry. The corresponding bonded specimens were investigated using attenuated total reflectance Fourier transformed infrared spectroscopy to monitor their chemical composition, infrared imaging to control bond integrity, and cross-sectional transmission electron microscopy to study their microstructure. Their interfacial fracture energy was measured using microindentation. An optimum water-to-alkoxide molar ratio of 10 and hydrolysis water at pH = 2 were found. Such conditions led to relatively dense films (> 90%), resulting in bonds with a fracture energy of 3.5 J/m 2 , significantly higher than those obtained using classical hydrophilic bonding (typically 1.5-2.5 J/m 2 ). Ageing of the coating solution was found to decrease the bond strength

Electroless siliconizing Fe-3% Cr-3% Si alloy

International Nuclear Information System (INIS)

Nurlina, Enung; Darmono, Budy; Purwadaria, Sunara

2000-01-01

In this research Fe-3%Cr-3%Mo-3%Si and Fe-3%Cr-3%Cu-3%Si alloys had been coated by silicon metal without electricity current which knows as electroless siliconizing. Coating was conducted by immersed sampler into melt fluoride-chloride salt bath at temperature of 750 o C for certain period. The layer consisted of Fe3Si phase. Observation by microscope optic and EDAX showed that the silicide layer were thick enough, adherent, free for crack and had silicon content on the surface more than 15%. The growth rate of silicide layer followed parabolic rate law, where the process predominantly controlled by interdiffusion rate in the solid phase. Key words : electroless siliconizing, the melt fluoride- chloride salt mix, silicide layer

Practical technical solution for clay-contaminated sands used in concrete

Directory of Open Access Journals (Sweden)

Estephane Pierre

2017-01-01

Full Text Available Sand, whether natural or manufactured, shows in many instances varying degrees of high levels of clay contamination. This fact is encountered in different parts of the globe and can lead to serious problems in adjusting concrete mix proportions and requiring high water to cement ratios and/or high dosages of superplasticizers without necessarily meeting the workability requirements, even when the sand is previously washed with fresh water. In this paper, different types of sand from the Gulf Cooperation Council (GCC region are being screened, analysed for their clay contents and consequent effects on plastic concrete quality. A technical solution is being proposed based on engineered superplasticizers. A testing protocol has been established to verify the robustness of optimized mix designs demonstrating the performance of the admixture in terms of initial and extended workability. In particular, it will be demonstrated that the customized concrete admixtures constitute by themselves a stand-alone answer to the usage of clay-contaminated sands in concrete.

Evaluation of Silicone as an Endovascular Stent Membrane: In Vivo Canine Studies

International Nuclear Information System (INIS)

Fontaine, Arthur B.; Borsa, John J.; Hoffer, Eric; Bloch, Robert; So, Corali

2001-01-01

Purpose: Comparative evaluation of the biological effects of a silicone-covered stent versus a bare-metal stent, in an animal model.Methods: Twelve stent implants were placed in the iliac arteries of six adult dogs. Each animal received one 8-mm x 20-mm silicone-covered stent (Permalume; Boston Scientific Vascular, Watertown, MA, USA), in the right iliac artery and one Wallstent (Boston Scientific Vascular) of the same diameter and length in the left iliac artery, during systemic anticoagulation. Angiography was performed before and after implantations. Animals were then allowed to recover and no platelet suppression was given during a 6-week interval, after which the animals were euthanized. The stented arteries were isolated and pressure-fixed in situ with 10% buffered formalin at a pressure of approximately 100 mmHg for a period of 1 hr. Two of 12 stented specimens were opened lengthwise and the luminal surfaces were photographed. Ten of 12 stented arterial segments were encased in methacrylate, then stained with hematoxylin and eosin. Neointimal thickness was quantified on histologic cross-section, for both bare and covered stents. The mean neointimal thicknesses were compared for significant difference using a student t-test.Results: All implants were widely patent at 6-week follow-up angiography. Histologic analysis showed bare metal stents covered by a thin uniform lining of neointima composed of smooth muscle cells in a hyaline matrix (mean thickness of 189 ± 47 μm). Silicone covered stents were devoid of neointima. There was no chronic thrombus or mature endothelium noted anywhere upon the internal silicone surfaces of any of the specimens. There was no foreign body reaction to the silicone cover.Conclusion: Short-term implantation of a silicone-lined Wallstent in canine iliac arteries is well tolerated. Silicone appears to be inert at 6 weeks in this experimental application

Application of porous silicon in solar cell

Science.gov (United States)

Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

2018-05-01

Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

Silicon-micromachined microchannel plates

CERN Document Server

Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100)

KAUST Repository

Sevilla, Galo T.

2013-07-09

Flexible and semi-transparent high performance thermoelectric energy harvesters are fabricated on low cost bulk mono-crystalline silicon (100) wafers. The released silicon is only 3.6% as thick as bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. This generic batch processing is a pragmatic way of transforming traditional silicon circuitry for extremely deformable high-performance integrated electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100)

KAUST Repository

Sevilla, Galo T.; Inayat, Salman Bin; Rojas, Jhonathan Prieto; Hussain, Aftab M.; Hussain, Muhammad Mustafa

2013-01-01

Flexible and semi-transparent high performance thermoelectric energy harvesters are fabricated on low cost bulk mono-crystalline silicon (100) wafers. The released silicon is only 3.6% as thick as bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. This generic batch processing is a pragmatic way of transforming traditional silicon circuitry for extremely deformable high-performance integrated electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Field observations of artificial sand and oil agglomerates

Science.gov (United States)

Dalyander, Patricia (Soupy); Long, Joseph W.; Plant, Nathaniel G.; McLaughlin, Molly R.; Mickey, Rangley C.

2015-01-01

Oil that comes into the surf zone following spills, such as occurred during the 2010 Deepwater Horizon (DWH) blowout, can mix with local sediment to form heavier-than-water sand and oil agglomerates (SOAs), at times in the form of mats a few centimeters thick and tens of meters long. Smaller agglomerates that form in situ or pieces that break off of larger mats, sometimes referred to as surface residual balls (SRBs), range in size from sand-sized grains to patty-shaped pieces several centimeters (cm) in diameter. These mobile SOAs can cause beach oiling for extended periods following the spill, on the scale of years as in the case of DWH. Limited research, including a prior effort by the U.S. Geological Survey (USGS) investigating SOA mobility, alongshore transport, and seafloor interaction using numerical model output, focused on the physical dynamics of SOAs. To address this data gap, we constructed artificial sand and oil agglomerates (aSOAs) with sand and paraffin wax to mimic the size and density of genuine SOAs. These aSOAs were deployed in the nearshore off the coast of St. Petersburg, Florida, during a field experiment to investigate their movement and seafloor interaction. This report presents the methodology for constructing aSOAs and describes the field experiment. Data acquired during the field campaign, including videos and images of aSOA movement in the nearshore (1.5-meter and 0.5-meter water depth) and in the swash zone, are also presented in this report.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

International Nuclear Information System (INIS)

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

2014-01-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

NARCIS (Netherlands)

Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

2017-01-01

In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

Light-Induced Degradation of Thin Film Silicon Solar Cells

International Nuclear Information System (INIS)

Hamelmann, F U; Weicht, J A; Behrens, G

2016-01-01

Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

Submarine sand ridges and sand waves in the eastern part of the China Sea

Science.gov (United States)

Wu, Ziyin; Li, Shoujun; Shang, Jihong; Zhou, Jieqiong; Zhao, Dineng; Liang, Yuyang

2016-04-01

Integrated with multi-beam and single-beam echo sounding data, as well as historical bathymetric data, submarine bathymetric maps of the eastern part of the China Sea, including the Bohai Sea, Huanghai Sea, and East China Sea, are constructed to systematically study submarine sand ridges and sand waves in the eastern part of the China Sea, combined with high-resolution seismic, sub-bottom profile and borehole data. Submarine sand ridges are extraordinarily developed in the eastern part of the China Sea, and 7 sand ridge areas can be divided from north to south, that is, the Laotieshan Channel sand ridge area in the Bohai Sea, the Korea Bay sand ridge area in the southern Huanghai Sea, the sand ridge area in the eastern Huanghai islands and the Huanghai Troughs, the Jianggang sand ridge area in the western Huanghai Sea, the sand ridge area in the East China Sea shelf, and the sand ridge and sand wave area in the Taiwan Strait and Taiwan Banks. The distribution area of the sand ridges and sand waves covers more than 450,000 km2, wherein ~10,000 km2 in the Bohai Bay, ~200,000 km2 in the Huanghai Sea, ~200,000 km2 in the East China Sea shelf, and ~40,000 km2 in the Taiwan Strait and Taiwan Banks, respectively. The great mass of sand ridges are distributed within water depth of 5-160 m, with a total length of over 160 km and a main width of 5-10 km. The inner structure of the sand ridges presents features of high-angle inclined beddings, with main lithology of sands, sand-mud alternations partly visible, and a small number of mud cores. Dating results indicate that the sand ridges in the eastern part of the China Sea are mainly developed in the Holocene. Sea-level variation dominates the sand ridge evolution in the eastern part of the China Sea since the LGM, and the sand ridges developed in the area of < 60m water depth are appeared in bad activity, meanwhile sand ridges with good activity are still developed in large scale.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

Science.gov (United States)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Orientationally ordered ridge structures of aluminum films on hydrogen terminated silicon

DEFF Research Database (Denmark)

Quaade, Ulrich; Pantleon, Karen

2006-01-01

Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the < 110 > direct......Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the ... > directions on the silicon substrate. The ridge structure appears when the film thickness is above 500 nm, and increasing the film thickness makes the structure more distinct. Anodic oxidation enhances the structure even further. X-ray diffraction indicates that grains in the film have mostly (110) facets...

Effect of sillimanite beach sand composition on mullitization and ...

Indian Academy of Sciences (India)

Unknown

Effect of sillimanite beach sand composition on mullitization and properties of Al2O3–SiO2 system ... Presence of zircon in Z-variety increases the hardness and fracture toughness. Alumina addition ... The ratio of charge to grinding media was ...

Salt content impact on the unsaturated property of bentonite-sand buffer backfilling materials

Energy Technology Data Exchange (ETDEWEB)

Zhang Ming [Key Laboratory of Mechanics on Disaster and Environment in Western China, Lanzhou University, Lanzhou 730000 (China); Zhang Huyuan, E-mail: p1314lvp@yahoo.com.cn [Key Laboratory of Mechanics on Disaster and Environment in Western China, Lanzhou University, Lanzhou 730000 (China); Jia Lingyan; Cui Suli [Key Laboratory of Mechanics on Disaster and Environment in Western China, Lanzhou University, Lanzhou 730000 (China)

2012-09-15

Highlights: Black-Right-Pointing-Pointer SWCC and infiltration process of bentonite-sand mixtures is researched. Black-Right-Pointing-Pointer The k{sub u} of bentonite-sand mixtures was evaluated as the buffer backfilling materials. Black-Right-Pointing-Pointer Salt content impacting on the unsaturated property of bentonite-sand materials is small. - Abstract: Bentonite mixed with sand is often considered as possible engineered barrier in deep high-level radioactive waste disposal in China. In the present work, the vapor transfer technique and water infiltration apparatus were used to measure the soil water characteristic curve (SWCC) and unsaturated hydraulic conductivity (k{sub u}) of bentonite-sand mixtures (B/S) effected by salt content. Results show, the water-holding capacity and k{sub u} increase slightly with the concentration of Na{sup +} in pore liquid increasing from 0 g/L to 12 g/L, similar with the solution concentration of Beishan groundwater in China. Salt content in the laboratory produced only one order of magnitude increase in k{sub u}, which is the 'safe' value. The different pore liquid concentrations used in this study led to small differences in thickness of diffuse double layer of bentonite in mixtures, this might explain why some differences have been found in final values of k{sub u}.

Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

International Nuclear Information System (INIS)

Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

2016-01-01

MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented. (paper)

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

1992-07-01

We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

Microarc Oxidation of the High-Silicon Aluminum AK12D Alloy

Directory of Open Access Journals (Sweden)

S. K. Kiseleva

2015-01-01

Full Text Available The aim of work is to study how the high-silicon aluminum AK12D alloy microstructure and MAO-process modes influence on characteristics (microhardness, porosity and thickness of the oxide layer of formed surface layer.Experimental methods of study:1 MAO processing of AK12D alloy disc-shaped samples. MAO modes features are concentration of electrolyte components – soluble water glass Na2SiO3 and potassium hydroxide (KOH. The content of two components both the soluble water glass and the potassium hydroxide was changed at once, with their concentration ratio remaining constant;2 metallographic analysis of AK12D alloy structure using an optical microscope «Olympus GX51»;3 image analysis of the system "alloy AK12D - MAO - layer" using a scanning electron microscope «JEOL JSM 6490LV»;4 hardness evaluation of the MAO-layers using a micro-hardness tester «Struers Duramin».The porosity, microhardness and thickness of MAO-layer formed on samples with different initial structures are analyzed in detail. Attention is paid to the influence of MAO process modes on the quality layer.It has been proved that the MAO processing allows reaching quality coverage with high microhardness values of 1200-1300HV and thickness up to 114 μm on high-silicon aluminum alloy. It has been found that the initial microstructure of alloy greatly affects the thickness of the MAO - layer. The paper explains the observed effect using the physical principles of MAO process and the nature of silicon particles distribution in the billet volume.It has been shown that increasing concentration of sodium silicate and potassium hydroxide in the electrolyte results in thicker coating and high microhardness.It has been revealed that high microhardness is observed in the thicker MAO-layers.Conclusions:1 The microstructure of aluminum AK12D alloy and concentration of electrolyte components - liquid glass Na2SiO3 and potassium hydroxide affect the quality of coating resulted from MAO

High frequency guided wave propagation in monocrystalline silicon wafers

OpenAIRE

Pizzolato, M.; Masserey, B.; Robyr, J. L.; Fromme, P.

2017-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full...

Fabrication process for tall, sharp, hollow, high aspect ratio polymer microneedles on a platform

International Nuclear Information System (INIS)

Ceyssens, Frederik; Chaudhri, Buddhadev Paul; Van Hoof, Chris; Puers, Robert

2013-01-01

This paper reports on a new lithographic process for fabricating arrays of tall, high aspect ratio (defined as height/wall thickness), hollow, polymer microneedles on a platform. The microneedles feature a high sharpness (down to 3 µm tip radius) and aspect ratio (>65) which is a factor 2 and 4 better than the state of the art, respectively. The maximum achievable needle shaft length is over 1 mm. The improved performance was obtained by using an anisotropically patterned silicon substrate covered with an antireflective layer as mold for the needle tip and an optimized SU-8 lithographic process. Furthermore, a platform containing liquid feedthroughs holding an arbitrary number of needles out of plane can be manufactured with only one additional process step. The high aspect ratio microneedles undergo failure at the critical load of around 230 mN in the case of 1 mm long hollow needles with triangular cross section and a base of 175 µm. Penetration into human skin is demonstrated as well. (paper)

Silicon nitride tri-layer vertical Y-junction and 3D couplers with arbitrary splitting ratio for photonic integrated circuits.

Science.gov (United States)

Shang, Kuanping; Pathak, Shibnath; Liu, Guangyao; Feng, Shaoqi; Li, Siwei; Lai, Weicheng; Yoo, S J B

2017-05-01

We designed and demonstrated a tri-layer Si3N4/SiO2 photonic integrated circuit capable of vertical interlayer coupling with arbitrary splitting ratios. Based on this multilayer photonic integrated circuit platform with each layer thicknesses of 150 nm, 50 nm, and 150 nm, we designed and simulated the vertical Y-junctions and 3D couplers with arbitrary power splitting ratios between 1:10 and 10:1 and with negligible(< -50 dB) reflection. Based on the design, we fabricated and demonstrated tri-layer vertical Y-junctions with the splitting ratios of 1:1 and 3:2 with excess optical losses of 0.230 dB. Further, we fabricated and demonstrated the 1 × 3 3D couplers with the splitting ratio of 1:1:4 for symmetric structures and variable splitting ratio for asymmetric structures.

Atomic-layer deposition of silicon nitride

CERN Document Server

Yokoyama, S; Ooba, K

1999-01-01

Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

Silicon-micromachined microchannel plates

International Nuclear Information System (INIS)

Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

International Nuclear Information System (INIS)

Badawy, Waheed A.

2008-01-01

Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H 2 O/C 2 H 5 OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide). The oxide films were prepared by the spray/pyrolysis technique which enables doping of the oxide film by different atoms like In, Ru or Sb during the spray process. Doping of SnO 2 or TiO 2 films with Ru atoms improves the surface characteristics of the oxide film which improves the solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (I sc ), due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (V oc ) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of silicon single crystals in solar cell fabrication and the optimization of the solar conversion efficiency will lead to the reduction of the cost as an important factor and also the increase of the solar cell efficiency making use of the large area of the porous structures

Identification of discontinuous sand pulses on the bed of the Colorado River in Grand Canyon

Science.gov (United States)

Mueller, E. R.; Grams, P. E.; Buscombe, D.; Topping, D. J.

2017-12-01

Decades of research on alluvial sandbars and sand transport on the Colorado River in Grand Canyon has contributed to in-depth understanding of the sand budget and lead to management actions designed to rebuild eroded sandbars. However, some basic, but difficult to address, questions about the processes and rates of sand movement through the system still limit our ability to predict geomorphic responses. The coarse fraction of the bed is heterogeneous and varies among boulders, cobble, gravel, and bedrock. Sand covers these substrates in patches of variable size and thickness, fills interstices to varying degrees, and forms mixed sand/coarse bed configurations such as linear stripes. Understanding the locations of sand accumulation, the quantities of sand contained in those locations, and the processes by which sand is exchanged among depositional locations is needed to predict the morphological response of sandbars to management actions, such as the controlled flood releases, and to predict whether sandbars are likely to increase or decrease in size over long (i.e. decadal) time periods. Here, we present evidence for the downstream translation of the sand component of tributary sediment inputs as discontinuous sand pulses. The silt and clay (mud) fraction of sediment introduced episodically by seasonal floods from tributary streams is transported entirely in suspension and moves through the 400 km series of canyons in a few days. The sand fraction of this sediment, which is transported on the bed and in suspension, moves downstream in sand pulses that we estimate range in length from a few km to tens of km. Owing to the complex geomorphic organization, the sand pulses are not detectable as coherent bed features; each individual sand pulse is comprised of many isolated storage locations, separated by rapids and riffles where sand cover is sparse. The presence of the sand pulses is inferred by the existence of alternating segments of sand accumulation and depletion

A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Directory of Open Access Journals (Sweden)

Shuai Shao

2017-02-01

Full Text Available Reliability risks for two different types of through-silicon-vias (TSVs are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranked for this TSV structure by FEA modeling. Parametric studies for material properties (modulus and thermal expansion of TSV polymer are performed. The second type is a high aspect ratio TSV filled by polycrystalline silicon (poly Si. Potential risks of the voids in the poly Si due to filling defects are studied. Fracture mechanics methods are utilized to evaluate the risk for two different assembly conditions: package assembled to printed circuit board (PCB and package assembled to flexible substrate. The effect of board/substrate/die thickness and the size and location of the void are discussed.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Sand characterization by combined centrifuge and laboratory tests

OpenAIRE

GAUDIN, C; SCHNAID, F; GARNIER, J

2005-01-01

The purpose of this paper is to evaluate new methods of interpretation of in situ tests in sand from correlations established from centrifuge and laboratory data. Emphasis is given to methods that are based on the combination of measurements from independent tests, such as the ratio of the elastic stiffness to ultimate strenght and the ratio of cone resistance and limit pressure. For that purpose, a series of centrifuge tests using a cone penetrometer and a cone pressuremeter was carried out ...

Metal location and thickness in a multilayered sheet by measuring Kα/Kβ, Lα/Lβ and Lα/Lγ X-ray ratios

International Nuclear Information System (INIS)

Cesareo, Roberto; Rizzutto, Marcia A.; Brunetti, Antonio; Rao, Donepudi V.

2009-01-01

When a multilayered material is analyzed by means of energy-dispersive X-ray fluorescence analysis, then the X-ray ratios of Kα/Kβ, or Lα/Lβ and Lα/Lγ, for an element in the multilayered material, depend on the composition and thickness of the layer in which the element is situated, and on the composition and thickness of the superimposed layer (or layers). Multilayered samples are common in archaeometry, for example, in the case of pigment layers in paintings, or in the case of gilded or silvered alloys. The latter situation is examined in detail in the present paper, with a specific reference to pre-Columbian alloys from various museums in the north of Peru.

Rapid microcantilever-thickness determination by optical interferometry

International Nuclear Information System (INIS)

Salmon, Andrew R; Capener, Matthew J; Elliott, Stephen R; Baumberg, Jeremy J

2014-01-01

Silicon microcantilevers are widely used in scanning-probe microscopy and in cantilever-sensing applications. However, the cantilever thickness is not well controlled in conventional lithography and, since it is also difficult to measure, it is the most important undefined factor in mechanical variability. An accurate method to measure this parameter is thus essential. We demonstrate the capability to measure microcantilever thicknesses rapidly (>1 Hz) and accurately (±2 nm) by optical interferometry. This is achieved with standard microscopy equipment and so can be implemented as a standard technique in both research and in batch control for commercial microfabrication. In addition, we show how spatial variations in the thickness of individual microcantilevers can be mapped, which has applications in the precise mechanical calibration of cantilevers for force spectroscopy. (paper)

Proximity-induced superconductivity in all-silicon superconductor /normal-metal junctions

Science.gov (United States)

Chiodi, F.; Duvauchelle, J.-E.; Marcenat, C.; Débarre, D.; Lefloch, F.

2017-07-01

We have realized laser-doped all-silicon superconducting (S)/normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers' critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitting with the linearized Usadel equations, demonstrating a reduction of 1 order of magnitude from previous superconductor/doped Si interfaces. In this well-controlled crystalline system we exploited the low-resistance S/N interfaces to elaborate all-silicon lateral SNS junctions with long-range proximity effect. Their dc transport properties, such as the critical and retrapping currents, could be well understood in the diffusive regime. Furthermore, this work led to the estimation of important parameters in ultradoped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive all-silicon superconducting electronics.

Electrochemical Deposition of Conformal and Functional Layers on High Aspect Ratio Silicon Micro/Nanowires.

Science.gov (United States)

Ozel, Tuncay; Zhang, Benjamin A; Gao, Ruixuan; Day, Robert W; Lieber, Charles M; Nocera, Daniel G

2017-07-12

Development of new synthetic methods for the modification of nanostructures has accelerated materials design advances to furnish complex architectures. Structures based on one-dimensional (1D) silicon (Si) structures synthesized using top-down and bottom-up methods are especially prominent for diverse applications in chemistry, physics, and medicine. Yet further elaboration of these structures with distinct metal-based and polymeric materials, which could open up new opportunities, has been difficult. We present a general electrochemical method for the deposition of conformal layers of various materials onto high aspect ratio Si micro- and nanowire arrays. The electrochemical deposition of a library of coaxial layers comprising metals, metal oxides, and organic/inorganic semiconductors demonstrate the materials generality of the synthesis technique. Depositions may be performed on wire arrays with varying diameter (70 nm to 4 μm), pitch (5 μ to 15 μ), aspect ratio (4:1 to 75:1), shape (cylindrical, conical, hourglass), resistivity (0.001-0.01 to 1-10 ohm/cm 2 ), and substrate orientation. Anisotropic physical etching of wires with one or more coaxial shells yields 1D structures with exposed tips that can be further site-specifically modified by an electrochemical deposition approach. The electrochemical deposition methodology described herein features a wafer-scale synthesis platform for the preparation of multifunctional nanoscale devices based on a 1D Si substrate.

Fontainebleau Sand

DEFF Research Database (Denmark)

Leth, Caspar Thrane

2006-01-01

The report is a summary of results from laboratory tests in the geotechncial research group on Fontainebleau sand.......The report is a summary of results from laboratory tests in the geotechncial research group on Fontainebleau sand....

Photovoltaic Performance Enhancement of Silicon Solar Cells Based on Combined Ratios of Three Species of Europium-Doped Phosphors.

Science.gov (United States)

Ho, Wen-Jeng; You, Bang-Jin; Liu, Jheng-Jie; Bai, Wen-Bin; Syu, Hong-Jhang; Lin, Ching-Fuh

2018-05-18

This paper presents a scheme for the enhancement of silicon solar cells in terms of luminescent emission band and photovoltaic performance. The proposed devices are coated with an luminescent down-shifting (LDS) layer comprising three species of europium (Eu)-doped phosphors mixed within a silicate film (SiO₂) using a spin-on film deposition. The three species of phosphor were mixed at ratios of 0.5:1:1.5, 1:1:1, or 1.5:1:0.5 in weight percentage (wt %). The total quantity of Eu-doped phosphors in the silicate solution was fixed at 3 wt %. The emission wavelengths of the Eu-doped phosphors were as follows: 518 nm (specie-A), 551 nm (specie-B), and 609 nm (specie-C). We examined the extended luminescent emission bands via photoluminescence measurements at room temperature. Closely matching the luminescent emission band to the high responsivity band of the silicon semiconductor resulted in good photovoltaic performance. Impressive improvements in efficiency were observed in all three samples: 0.5:1:1.5 (20.43%), 1:1:1 (19.67%), 1.5:1:0.5 (16.81%), compared to the control with a layer of pure SiO₂ (13.80%).

Comparison of the sand liquefaction estimated based on codes and practical earthquake damage phenomena

Science.gov (United States)

Fang, Yi; Huang, Yahong

2017-12-01

Conducting sand liquefaction estimated based on codes is the important content of the geotechnical design. However, the result, sometimes, fails to conform to the practical earthquake damages. Based on the damage of Tangshan earthquake and engineering geological conditions, three typical sites are chosen. Moreover, the sand liquefaction probability was evaluated on the three sites by using the method in the Code for Seismic Design of Buildings and the results were compared with the sand liquefaction phenomenon in the earthquake. The result shows that the difference between sand liquefaction estimated based on codes and the practical earthquake damage is mainly attributed to the following two aspects: The primary reasons include disparity between seismic fortification intensity and practical seismic oscillation, changes of groundwater level, thickness of overlying non-liquefied soil layer, local site effect and personal error. Meanwhile, although the judgment methods in the codes exhibit certain universality, they are another reason causing the above difference due to the limitation of basic data and the qualitative anomaly of the judgment formulas.

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

International Nuclear Information System (INIS)

Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

1999-01-01

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

Neutron spectrometry with a monolithic silicon telescope.

Science.gov (United States)

Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

2007-01-01

A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found.

[Process study on hysteresis of vegetation cover influencing sand-dust events].

Science.gov (United States)

Xu, Xing-Kui; Wang, Xiao-Tao; Zhang, Feng

2009-02-15

Data analysis from satellite and weather stations during 1982-2000 shows nonlinear relationship between vegetation cover and sand-dust events is present in most part of China. Vegetation cover ratio in summer can impact significantly on the frequency of sand-dust storms from winter to spring in the source regions of sand-dust events. It is not quite clear about the hysteresis that vegetation cover in summer influence sand-dust events during winter and spring. A quasi-geostrophic barotropic model is used under the condition of 3 magnitude of frictional coefficient to investigate the cause of the hysteresis. Wind velocity shows a greatest decline at 90% during 72 h as initial wind velocity is 10 m/s for magnitude of frictional coefficient between atmosphere and water surface, greatest decline at 100% during 18 h for magnitude of frictional coefficient between atmosphere and bare soil and a 100% reduction of wind speed during 1 h for magnitude of frictional coefficient between atmosphere and vegetation cover. Observation and simulation prove that residual root and stem from summervegetation are one of factors to influence sand-dust events happened during winter and spring. Air inhibition from residual root and stem is a most important reason for hysteresis that vegetation cover influence sand-dust events.

Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals

International Nuclear Information System (INIS)

Balucani, M.; Nenzi, P.; Chubenko, E.; Klyshko, A.; Bondarenko, V.

2011-01-01

This article presents the study of the electrochemical deposition of zinc oxide from the non-aqueous solution based on dimethyl sulfoxide and zinc chloride into the porous silicon matrix. The features of the deposition process depending on the thickness of the porous silicon layer are presented. It is shown that after deposition process the porous silicon matrix is filled with zinc oxide nanocrystals with a diameter of 10–50 nm. The electrochemically deposited zinc oxide layers on top of porous silicon are shown to have a crystalline structure. It is also shown that zinc oxide crystals formed by hydrothermal method on the surface of electrochemically deposited zinc oxide film demonstrate ultra-violet luminescence. The effect of the porous silicon layer thickness on the morphology of the zinc oxide is shown. The structures obtained demonstrated two luminescence bands peaking at the 375 and 600 nm wavelengths. Possible applications of ZnO nanostructures, porous and continuous polycrystalline ZnO films such as gas sensors, light-emitting diodes, photovoltaic devices, and nanopiezo energy generators are considered. Aspects of integration with conventional silicon technology are also discussed.

Attenuation of Thermal Neutrons by Crystalline Silicon

International Nuclear Information System (INIS)

Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

2002-01-01

A simple formula is given which allows to calculate the contribution of the total neutron cross - section including the Bragg scattering from different (hkt) planes to the neutron * transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy .A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500μ eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

Cemented Backfilling Technology of Paste-Like Based on Aeolian Sand and Tailings

Directory of Open Access Journals (Sweden)

Qinli Zhang

2016-12-01

Full Text Available Aeolian sand, tailings, and #32.5 Portland cement were used to produce backfilling aggregate, and physicochemical evaluations and proportioning tests were conducted. It is revealed that a mixture of aeolian sand and tailings can be used as a backfilling aggregate for the complementarities of their physicochemical properties; e.g., high Al2O3 content in the aeolian sand and CaO content in the tailings, coarse particles of aeolian sand and fine particles of tailings, etc. In addition, the optimal backfilling aggregate was shown to have a mass fraction of 72%–74%, a cement–sand ratio of 1:8, and an aeolian sand proportion of 25%. Furthermore, viscometer tests were used to analyze the rheological characteristics, and the slurry in these optimized proportions exhibited shear thinning phenomena with an initial yield stress, which belongs to paste-like—a cemented backfilling slurry with a higher mass fraction than a two-phase flow and better flowability than a paste slurry. Finally, the application of this backfilling technology shows that it can not only realize safe mining, but also bring huge economic benefits, and has some constructive guidance for environmental protection.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

Science.gov (United States)

Ghosh, P.

2014-07-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

International Nuclear Information System (INIS)

Ghosh, P

2014-01-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

Design of instantaneous liquid film thickness measurement system for conductive or non-conductive fluid with high viscosity

Directory of Open Access Journals (Sweden)

Yongxin Yu

2017-06-01

Full Text Available In the paper, a new capacitive sensor with a dielectric film coating was designed to measure the thickness of the liquid film on a flat surface. The measured medium can be conductive or non-conductive fluid with high viscosity such as silicone oil, syrup, CMC solution and melt. With the dielectric film coating, the defects caused by the humidity in a capacitor can be avoided completely. With a excitation frequency 0-20kHz, the static permittivity of capacitive sensor is obtained and stable when small thicknesses are monitored within the frequency of 0-3kHz. Based on the measurement principle, an experimental system was designed and verified including calibration and actual measurement for different liquid film thickness. Experimental results showed that the sensitivity, the resolution, repeatability and linear range of the capacitive sensor are satisfied to the liquid film thickness measurement. Finally, the capacitive measuring system was successfully applied to the water, silicone oil and syrup film thickness measurement.

Doping of silicon by laser-induced diffusion

International Nuclear Information System (INIS)

Pretorius, R.; Allie, M.S.

1986-01-01

This report gives information on the doping of silicon by laser-induced diffusion, modelling and heat-flow calculation, doping from evaporated layers and silicon self-diffusion during pulsed laser irradiation. In order to tailor dopant profiles accurately a knowledge of the heat flow and the melt depths attained as a function of laser energy and material type is crucial. The heat flow calculations described can be used in conjuntion with most diffusion equations in order to predict the redistribution of the deposited dopant which occurs as a result of liquid phase diffusion during the melting period. Doping of Si was carried out by evaporating this films of Sb, In and Bi 10 to 300 A thick, onto the substrates. During pulsed laser irradiation the dopant film and underlying silicon substrate is melted and the dopant incorporated into the crystal lattice during recrystallization. Radioactive 31 Si(T1/2=2,62h) was used as a tracer to measure the self-diffusion of silicon in silicon during pulsed laser (pulsewidth = 30ns, wavelength = 694nm) irradiation

Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

Science.gov (United States)

Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

2018-05-01

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (˜3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

Investigation of the charge collection for strongly irradiated silicon strip detectors of the CMS ECAL Preshower

International Nuclear Information System (INIS)

Bloch, Ph.; Peisert, A.; Chang, Y.H.; Chen, A.E.; Hou, S.; Lin, W.T.; Cheremukhin, A.E.; Golutvin, I.A.; Urkinbaev, A.R.; Zamyatin, N.I.; Loukas, D.

2001-01-01

Strongly irradiated (2.3·10 14 n/cm 2 ) silicon strip detectors of different size, thickness and different design options were tested in a muon beam at CERN in 1999. A charge collection efficiency in excess of 85% and a signal-to-noise ratio of about 6 are obtained in all cases at high enough bias voltage. Details of the charge collection in the interstrip and the guard ring region and cross-talk between strips were also studied. We find that the charge collection efficiency and the cross-talk between strips depend on the interstrip distance

Study on strength characteristics of concrete using M-Sand and coconut fibers

Science.gov (United States)

Neeraja, D.; Wani, Amir Iqbal; Kamili, Zainulabideen; Agarwal, Krishnakant

2017-11-01

In the current world, concrete has become a very important part of the construction industry and the materials which are used in making concrete have evolved due to better quality of cement and better grade of coarse aggregates. The sand is an important part of concrete. It is mainly procured from natural sources. Thus the grade of sand is not under our control. The methods of removing sand from river beds are causing various environmental issues and river sand is depleting at a faster rate than it is replaced by natural methods. Hence, various replacements for the river sand are being done, one of which is manufactured-sand. It is obtained from various granite quarries. Manufactured-sand or M-sand is slowly replacing the fine aggregate in the concrete as the sand is well graded and gives higher strength of concrete. There are various fibers used for reinforcing concrete which consist mainly of artificial or steel fibers. Some of these fibers are quite costly and sometimes difficult to obtain. So there are many natural fibers which can be used in place of these fibers, one of which is coconut fiber, extracted from the shell of a coconut. Coconut fibers are used in various industries like rope making, coir mattresses etc. Since these fibers are one of the strongest fibers among naturally occuring fibers, they can be used in the concrete mix to increase the resistance in concrete. They are also light weight and easily available and thus can be used in reinforcement of concrete. The studies up till now have tested the use of coconut fibers in normal concrete involving river sand but in this study a particular ratio of M-sand and river sand is used to get the maximum possible strength. Hence, in this project an attempt was made to use M-sand and coconut fiber in concrete. Based on the test results, it can be concluded that combination of M-sand and coconut fibers gave favorable results in strength criteria.

SONOS memories with embedded silicon nanocrystals in nitride

International Nuclear Information System (INIS)

Liu, Mei-Chun; Chiang, Tsung-Yu; Chao, Tien-Sheng; Kuo, Po-Yi; Lei, Tan-Fu; Chou, Ming-Hong; Wu, Yi-Hong; Cheng, Ching-Hwa; Liu, Sheng-Hsien; Yang, Wen-Luh; You, Hsin-Chiang

2008-01-01

We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N 2 O is better than O 2 oxide. Retention property is improved when the thickness of N 2 O is increased to 3.0 nm

Study of Black Sand Particles from Sand Dunes in Badr, Saudi Arabia Using Electron Microscopy

Directory of Open Access Journals (Sweden)

Haider Abbas Khwaja

2015-08-01

Full Text Available Particulate air pollution is a health concern. This study determines the microscopic make-up of different varieties of sand particles collected at a sand dune site in Badr, Saudi Arabia in 2012. Three categories of sand were studied: black sand, white sand, and volcanic sand. The study used multiple high resolution electron microscopies to study the morphologies, emission source types, size, and elemental composition of the particles, and to evaluate the presence of surface “coatings or contaminants” deposited or transported by the black sand particles. White sand was comprised of natural coarse particles linked to wind-blown releases from crustal surfaces, weathering of igneous/metamorphic rock sources, and volcanic activities. Black sand particles exhibited different morphologies and microstructures (surface roughness compared with the white sand and volcanic sand. Morphological Scanning Electron Microscopy (SEM and Laser Scanning Microscopy (LSM analyses revealed that the black sand contained fine and ultrafine particles (50 to 500 nm ranges and was strongly magnetic, indicating the mineral magnetite or elemental iron. Aqueous extracts of black sands were acidic (pH = 5.0. Fe, C, O, Ti, Si, V, and S dominated the composition of black sand. Results suggest that carbon and other contaminant fine particles were produced by fossil-fuel combustion and industrial emissions in heavily industrialized areas of Haifa and Yanbu, and transported as cloud condensation nuclei to Douf Mountain. The suite of techniques used in this study has yielded an in-depth characterization of sand particles. Such information will be needed in future environmental, toxicological, epidemiological, and source apportionment studies.

Triaxial MEMS accelerometer with screen printed PZT thick film

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard

2010-01-01

. In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...

Optimization of laser energy deposition for single-shot high aspect-ratio microstructuring of thick BK7 glass

Energy Technology Data Exchange (ETDEWEB)

Garzillo, Valerio; Grigutis, Robertas [Dipartimento di Scienza e Alta Tecnologia, University of Insubria, Via Valleggio 11, I-22100 Como (Italy); Jukna, Vytautas [Centre de Physique Theorique, CNRS, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau (France); LOA, ENSTA-ParisTech, CNRS, Ecole Polytechnique, Université Paris Saclay, F-91762 Palaiseau (France); Couairon, Arnaud [Centre de Physique Theorique, CNRS, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau (France); Di Trapani, Paolo [Dipartimento di Scienza e Alta Tecnologia, University of Insubria and CNISM UdR Como, Via Valleggio 11, I-22100 Como (Italy); Jedrkiewicz, Ottavia, E-mail: ottavia.jedrkiewicz@ifn.cnr.it [Istituto di Fotonica e Nanotecnologie, CNR and CNISM UdR Como, Via Valleggio 11, I-22100 Como (Italy)

2016-07-07

We investigate the generation of high aspect ratio microstructures across 0.7 mm thick glass by means of single shot Bessel beam laser direct writing. We study the effect on the photoinscription of the cone angle, as well as of the energy and duration of the ultrashort laser pulse. The aim of the study is to optimize the parameters for the writing of a regular microstructure due to index modification along the whole sample thickness. By using a spectrally resolved single pulse transmission diagnostics at the output surface of the glass, we correlate the single shot material modification with observations of the absorption in different portions of the retrieved spectra, and with the absence or presence of spectral modulation. Numerical simulations of the evolution of the Bessel pulse intensity and of the energy deposition inside the sample help us interpret the experimental results that suggest to use picosecond pulses for an efficient and more regular energy deposition. Picosecond pulses take advantage of nonlinear plasma absorption and avoid temporal dynamics effects which can compromise the stationarity of the Bessel beam propagation.

Foamed concrete containing rice husk ash as sand replacement: an experimental study on compressive strength

Science.gov (United States)

Rum, R. H. M.; Jaini, Z. M.; Boon, K. H.; Khairaddin, S. A. A.; Rahman, N. A.

2017-11-01

This study presents the utilization of rice husk ash (RHA) as sand replacement in foamed concrete. The study focuses on the effect of RHA on the compressive strength of foamed concrete. RHA contains high pozzolanic material that reacts with cementitious to enhance the strength and durability of foamed concrete. RHA also acts as filler causing the foamed concrete to become denser while retaining its unique low density. A total 243 cube specimens was prepared for the compression test. Two sets of mix design were employed at water-cement (W/C) ratio of 0.55, 0.60 and cement-sand ratio of 0.50, 0.33. The results revealed that the presence of RHA as sand replacement resulted in an increase in the compressive strength of foamed concrete. Moreover, 30% to 40% RHA was the optimum content level, contributing to the compressive strength of 18.1 MPa to 22.4 MPa. The W/C ratio and superplasticiser dosage play small roles in improving workability. In contrast, density governs the compressive strength of foamed concrete.

An investigation of the relationship between actual and apparent gasoline thickness in a uniform sand aquifer

International Nuclear Information System (INIS)

Ballestero, T.P.; Fiedler, F.R.; Kinner, N.E.

1994-01-01

A common effort involved in the remediation of contamination by petroleum hydrocarbons in porous media is the monitoring and volume estimation of the immiscible hydrocarbon fluid. The apparent free product thickness indicated by a standard monitoring well is typically much greater than the actual free product thickness in the surrounding soil. An equation to predict actual thickness was developed using heterogeneous fluid flow mechanics and hydrostatics. This equation is: t g =t(1-S g )-h a , where t g =actual formation free product thickness, t=apparent thickness, S g =specific gravity of petroleum hydrocarbon, and h a =distance between the groundwater table and the free product in the formation. The developed theory was compared to data collected from a physical model which simulated field conditions. The theory was used to estimate product thickness in the model, and then these estimates were statistically tested for accuracy. The theoretical slope was not statistically different from the regression slope at test levels of α=0.05 and α=0.01, while the theoretical intercept (h a ) was statistically different at α=0.05 and α=0.01. The discrepancy between the theoretical intercept and the regression intercept was probably due to either an incorrect assumption that h a =bar h c (bar h c =average wetting capillary rise), or an incorrect laboratory measurement of bar h c . The effects of water-table fluctuations were also studied. A rising water table caused a decrease in apparent thickness and an increase in actual thickness, and vice versa. Finally, the developed theoretical equation was compared to the results of previously published predictive methods and experiments. The comparison was made by calculating percent error and using a chi-square statistic. The developed theory was found to be the best predictor of actual product thickness for both laboratory data sets used

Influence of core sand properties on flow dynamics of core shooting process based on experiment and multiphase simulation

Directory of Open Access Journals (Sweden)

Chang-jiang Ni

2017-03-01

Full Text Available The influence of core sand properties on flow dynamics was investigated synchronously with various core sands, transparent core-box and high-speed camera. To confirm whether the core shooting process has significant turbulence, the flow pattern of sand particles in the shooting head and core box was reproduced with colored core sands. By incorporating the kinetic theory of granular flow (KTGF, kinetic-frictional constitutive correlation and turbulence model, a two-fluid model (TFM was established to study the flow dynamics of the core shooting process. Two-fluid model (TFM simulations were then performed and a areasonable agreement was achieved between the simulation and experimental results. Based on the experimental and simulation results, the effects of turbulence, sand density, sand diameter and binder ratio were analyzed in terms of filling process, sand volume fraction (αs and sand velocity (Vs.

Micro filtration membrane sieve with silicon micro machining for industrial and biomedical applications

NARCIS (Netherlands)

van Rijn, C.J.M.; Elwenspoek, Michael Curt

1995-01-01

With the use of silicon micromachining an inorganic membrane sieve for microfiltration is constructed, having a siliconnitride membrane layer with thickness typically 1 pm and perforations typically between 0.5 pm and 10 pm in diameter. As a support a -silicon wafer with openings of loo0 pm in

Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

International Nuclear Information System (INIS)

Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

2016-01-01

The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

FeS-coated sand for removal of arsenic(III) under anaerobic conditions in permeable reactive barriers

Science.gov (United States)

Han, Y.-S.; Gallegos, T.J.; Demond, A.H.; Hayes, K.F.

2011-01-01

Iron sulfide (as mackinawite, FeS) has shown considerable promise as a material for the removal of As(III) under anoxic conditions. However, as a nanoparticulate material, synthetic FeS is not suitable for use in conventional permeable reactive barriers (PRBs). This study developed a methodology for coating a natural silica sand to produce a material of an appropriate diameter for a PRB. Aging time, pH, rinse time, and volume ratios were varied, with a maximum coating of 4.0 mg FeS/g sand achieved using a pH 5.5 solution at a 1:4 volume ratio (sand: 2 g/L FeS suspension), three days of aging and no rinsing. Comparing the mass deposited on the sand, which had a natural iron-oxide coating, with and without chemical washing showed that the iron-oxide coating was essential to the formation of a stable FeS coating. Scanning electron microscopy images of the FeS-coated sand showed a patchwise FeS surface coating. X-ray photoelectron spectroscopy showed a partial oxidation of the Fe(II) to Fe(III) during the coating process, and some oxidation of S to polysulfides. Removal of As(III) by FeS-coated sand was 30% of that by nanoparticulate FeS at pH 5 and 7. At pH 9, the relative removal was 400%, perhaps due to the natural oxide coating of the sand or a secondary mineral phase from mackinawite oxidation. Although many studies have investigated the coating of sands with iron oxides, little prior work reports coating with iron sulfides. The results suggest that a suitable PRB material for the removal of As(III) under anoxic conditions can be produced through the deposition of a coating of FeS onto natural silica sand with an iron-oxide coating. ?? 2010 Elsevier Ltd.