samarium arsenides: Topics by WorldWideScience.org

Gallium Arsenide Pilot Line for High Performance ...

Autoionizing and Auger transitions in atomic manganese and samarium have been experimentally investigated by observation of the ejected electrons in the energy region 0 to 40 eV following electron impact excitation with incident beams in the energy range 15-500 eV. Seventy-four spectral features are tabulated for manganese and a number of new assignments have been made based on pseudo-relativistic Hartree-Fock calculations and quantum defect analysis. A similar study of samarium reveals only a number of broad features in the ejected-electron energy range 8-10 eV. Three features have been observed consistently in the ejected-electron spectrum of samarium and assigned by comparison with previous work. (author).

Stabilisation of #alpha#-Sialons using multiple additives

... used in our aluminum process include a barrier to isolate aluminum from the gold-based ohmic contacts, thereby preventing "purple plague," and a ...

1991-08-08

Band structure and electron-electron interaction in samarium monosulphide

Multi-cation #alpha#-Sialon ceramics were prepared using mixtures of samarium with calcium, magnesium, yttrium and ytterbium, and compared with a pure Sm-Sialon of equivalent total stabilising cation composition. A ratio of 80eq% samarium to 20eq% of the second stabilising additive was used. Samples were fired at 1820 deg C and subsequently heat treated at 1450 deg C. XRD phase analysis showed that all additives resulted in greater #alpha#-Sialon stability, and that calcium was the most effective additive for the stabilisation of the #alpha#-Sialon phase. Copyright (1998) Australasian Ceramic Society

1998-09-28

NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

The method of augmented plane wave (APW) is used to obtain the band structure of the SmS compound in the semiconductor and metal phases. The noncentral part of the Coulomb electron-electron interaction is taken into account in the first order perturbation theory. In this case the radial part of the wave APW-function is taken as a zero approximation function. A multiplet structure of the excited configuration f"5d, which provides a good description of the X-ray photoelectron spectrum and optical spectrum epsilon_2(#omega#), is obtained. The configuration fd is calculated for the interpretation of the optical absorption spectrum of the samarium monosulfide metal phase. (author).

Indium Arsenide (InAs) Quantum ... - Glenn Research Center - NASA

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

1993-05-01

High bandgap window layer for GaAs solar cells and fabrication process therefor

Oct 16, 2006 ... Williams, F.; and Nozik, A.J.: Irreversibilities in Mechanism of Photoelectrolysis. Nature, vol. 271, no. 5641, 1978, pp. 137-139. Luque, A.; and ...

A Gallium Arsenide MESFET Operational Amplifier for Use in ...

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power ...

1979-05-29

Electronic structure and properties of boron phosphide and boron arsenide

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1993-12-01

Thermal stability of mixed-cation #alpha#-sialon ceramics

The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).

Preparation and dosimetry of radiotherapeutic particles for arthropaties; Preparacion y dosimetria de particulas radioterapeuticas para artropatias

A series of #alpha#-sialon (#alpha#') compositions containing mixed stabilising cations were prepared, by introducing additional CaO to a basic Sm #alpha#-sialon compositions. The thermal stability of these Sm-Ca-containing #alpha#-sialon phases was investigated using XRD, SEM and EDXS techniques. It was found that the addition of calcium into the Sm #alpha#-sialon systems greatly improved the stability of the #alpha#-sialon phases. Calcium was found to be incorporated into the #alpha#-sialon structure, coexistent with the samarium, and partitioning of the calcium and samarium was observed between the #alpha#' phase and grain boundary phases. This indicates a technique which may be used to improve the thermal stability of the #alpha#' phase while maintaining good refractory phases at the sialon grain boundaries.

2003-01-02

Feasibility investigations of growing and characterizing gallium arsenide crystals in ribbon form. Quarterly progress report 1 Jan-31 Mar 1975

It was developed a new formulation of macro aggregates of Samarium 153 ({sup 153} Sm-MH) for the arthropaties treatment. The radio pharmaceutic was prepared by reaction of Samarium 153 chloride (SmCl{sub 3}) in aqueous environment with sodium boron hydride in NaOH 0.5 N. The microscopic analysis shown that the particles have an average size of 4% m (range 1-14 {mu} m). The velocity of sedimentation was 0.008 cm/min with high stability in vitro in human serum. The biological studies in healthy rabbits, shown that the complex is retained inside the articulation still eight days after of the administration of the radiopharmaceutical. Likewise, it is presented the data of absorbed dose in the different target organs, which was determined by thermoluminescent dosimetry (TLD) through the use of a REMCAL phantom (radiation equivalent manikin calibration). (Author)

1999-07-01

Ceramics based on SmCoO{sub 3-{delta}} prepared by combustion synthesis as catalysts in hydrocarbon partial oxidation

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Wetlands remediation of gallium arsenide: A case study describing a site-specific exposure assessment

Samarium cobaltite ceramic perovskites, with and without platinum particles dispersion, are possible candidates as electrode for electrochemical conversion of hydrocarbon and for intermediate temperature solid oxide fuel cells (ITSOFC). In this work, samarium cobaltites were synthesized by the combustion method using cobalt, and samarium nitrates as cation precursors and urea as fuel. For containing-platinum compositions Pt (II) acetyl acetonate was also employed as precursor. The effect of Sr on the phase formation and its electrical behavior is also studied. Specific surface area (BET), SEM-EDX, TEM and XRD analysis are used to characterize the powders obtained. Powders were pressed into pellets and sintered in air in the temperature range of 1200 -1400 C. Electrical impedance spectroscopy studies (EIS) are performed on sintered samples. The as-prepared powders showed an amorphous structure and by TEM a very small ...

2002-07-01

The AMOS cell - An improved metal-semiconductor solar cell

Based upon the existing regulatory cleanup criteria, remediation of this wetlands was proposed by the New Jersey Department of Environmental Protection and Energy (NJDEPE). This remedial process would have totally destroyed a thriving Old Field Wetlands. Site-Specific evaluation of the chemicals of potential concern (CPC), remaining source areas, potential environmental fate and transport (EF and T), toxicology (including oral absorption and bioaccumulation) and potential land use scenarios were conducted. It was determined that although the analytical chemistry data reported soil concentrations of arsenic, the compound used by the facility and discharged to the wetlands sediments was in fact gallium arsenide. Secondly, all remaining source areas and hot spots had previously been remediated. Vertical migration to soils had not progressed past a depth of 3 feet and groundwater/surface water did not contain significantly elevated concentrations of gallium ...

1994-12-31

Breakdown electroluminescence spectra in structures based on the solid solutions Ga/sub 1-x/Al/sub x/P(As)

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

1975-01-01

Trace metal characterization of the U-Al matrix by atomic spectroscopy

The authors investigate the breakdown luminescence spectra in reverse-biased p-n heterojunctions based on gallium and aluminum phosphides and arsenides for the purpose of determining their behavior as lasing and photodetection materials. Data are given on temperature coefficients, band gap structure, bremsstrahlung, hot carrier mobility and photon emission, and transition and recombination parameters.

1987-08-01

Neutron scattering studies of mixed-valence semiconductors

Uranium-aluminum alloys with a significant enrichment of uranium with "2"3"3U or "2"3"5U serve as nuclear fuels in research reactors. The quality assurance of this fuel requires, among other things, precise knowledge that all trace metal constituents that affect neutron economy, fuel integrity, and fuel fabrication process parameters are well within the specification limits. Trace metal characterization of "2"3"5U-Al alloy has been carried out by atomic spectrometry. The trace metal constituents of interest are grouped into common metals (silver, boron, calcium, cadmium, cobalt, chromium, copper, iron, magnesium, manganese, molybdenum, sodium, nickel, lead, silicon, tin, titanium, vanadium, tungsten, and zinc) and lanthanides (cerium, dysprosium, europium, gadolinium, holminium, lutetium, samarium, and terbium). The elements yttrium and zirconium are grouped with the latter in view of the chemical separation procedure used. The alloy samples are dissolved in 6 M ...

Crystal structure and magnetic properties of Sm{sub 3}ReO{sub 7}

Neutron scattering experiments on the mixed-valence (MV) compounds SmB{sub 6} are reported. The inelastic magnetic response of SmB{sub 6} at T = 2 K, measured on a double-isotope single crystal,displays a strongly damped peak at 35 meV corresponding to the inter multiplet transition of Sm{sup 2+}. At lower energies ( h.{omega} {approx_equal} 14 meV), a narrow magnetic excitation is observed, with remarkable scattering-vector and temperature dependences of its intensity. This novel feature is discussed in terms of recent theoretical works describing the formation of an anisotropic local bound state in semiconducting MV materials. If the average samarium valence is decreased by substituting La for Sm, a peak is found to appear at high energies. The elastic magnetic form factor of SmB{sub 6} was determined using polarised neutrons and no significant difference is observed in its Q-dependence with respect to that of pure divalent samarium. This ...

1994-12-31

The study of thermal characteristics of high temperature oven for atomic spectroscopy

Crystals of a new ternary samarium rhenium oxide, Sm{sub 3}ReO{sub 7} were obtained by subsolidus reaction of samariumsesquioxide and rheniumdioxide (ratio 1.5:1) in sealed Pt-10Rh-tubes at 1673 K. The structure was determined by single-crystal X-ray diffraction. Sm{sub 3}ReO{sub 7} crystallizes in the orthorohombic system with unit cell dimensions a = 10.736(5), b = 7.392(3), and c = 7.519(3) in space group Cmcm (No. 63) with Z = 4. The structure consists of ReO{sub 6} octahedra, distorted SmO{sub 6} octahedra, and SmO{sub 8} prisms that are interconnected to each other to form a three-dimensional network. Rhenium has the formal oxidation state of +5 but no metal-metal bond is observed in this compound. The observed magnetization in the temperature range 4 K < T < 52 K is explained by a Curie-Weiss law modified by a temperature independent Van Vleck paramagnetism of samarium (3+).

1996-08-01

Magnetization and 61Ni Moessbauer effect study of the ternary arsenide CrNiAs

We present a high temperature heat oven with merits of conventional heat pipe oven and study ots thermal characteristics. The oven consists of stainless steel body and heating part of three layers of ceramic tubes. We obtained the maximum temperature of about 1350. deg. C at the center which was measured by thermocouple and infrared thermometer. And we compared the heating characteristics in the cases of external heating and no extent heating. It was applied to self diffraction experiment in the samarium gas which was one of the high melting point material.

1997-11-01

1 2

High-efficiency solar cell and method for fabrication

The results of x-ray diffraction, dc magnetization, and 61Ni Moessbauer spectroscopy studies of the ternary arsenide CrNiAs are reported. This compound crystallizes in the orthorhombic Fe2P-type structure (space group P6-bar2m) with the lattice parameters a 6.1128(2) A and c = 3.6585(1) A. CrNiAs is a mean-field ferromagnet with Curie temperature TC = 171.9(1) K and the critical exponents ? 0.514(18), ? = 1.010(16), and ? = 2.922(10). The temperature dependence of the magnetic susceptibility above TC follows the modified Curie-Weiss law with a paramagnetic Curie temperature of 176.0(3) K and effective magnetic moment per transition metal atom of 2.42(1) ?B. The magnetic moment per formula unit at 4.2 K is found to be 1.114(33) ?B. The hyperfine magnetic field at 61Ni nuclei at 4.2 K of 41.5(1.0) kOe implies that the Ni atoms carry a magnetic moment of 0.15(3) ?B, and that the moment carried by the Cr atoms is 0.95(6) ?B. The Debye temperature of CrNiAs is 221(1) K.

2008-08-13

Milling materials using CO{sub 2} clusters; Materialbearbeitung durch Clusterionenbeschuss

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical ...

1999-08-31

Satellite power study (SPS) concept definition study (exhibit D). Volume 1: executive summary. Final report

The Sputter coefficient of accelerated CO{sub 2} cluster ions hitting surfaces of various materials is investigated. For copper it varies proportional to the 2nd power of the energy between 155 and 260 keV. The rate of erosion for different target materials varies by two orders of magnitude from tungsten to PMMA. Diamond is eroded fairly quickly, while aluminum is eroded less than corundum (Al{sub 2}O{sub 3}). No simple correlation of the sputter coefficient on the bulk material properties is found. For copper the angular distribution of sputtered material is measured and found to be following roughly a cosine distribution. By using masks different microstructures have been produced in cobalt-samarium magnets, diamond and glass. (orig.)

1993-10-01

The crystal structure of the novel ternary silicide Sm_4Pd_4Si_3

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

1981-03-01

Synthesis and photoluminescence properties of Sm3+-doped LaMgB5O10 and GdMgB5O10

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

Study on pyrolysing behavior of NiO-SDC composite particles prepared by spray pyrolysis technique

Luminescence and reflection spectra as well as luminescence kinetics of the 1 mol% Sm3+-doped crystalline lanthanum magnesium meta borate (LaMgB5O10) and gadolinium magnesium meta borate (GdMgB5O10) were analyzed. Materials were synthesized by conventional solid state route and showed bright orange-red emission under UV excitation. Emission spectra contain sharp and well resolved Sm3+4G5/2#->#6HJ transitions indicating a strong crystal-field effect. In case of gadolinium compound energy transfer between Gd3+ and Sm3+ was detected. The luminescent kinetics of the Sm3+ in analyzed powders is characterized by single exponential decay and experimental values vary in the range 2.2-2.4 ms. - Research highlights: ? Phosphorescence of samarium-doped lanthanide magnesium meta borates. ? Bright and well resolved orange-red emission of Sm3+ under UV excitation. ? Energy transfer from Gd3+ to Sm3+ in gadolinium magnesium meta borate is observed. ? The decay lifetimes is ...

2011-07-01

Microwave dissolution of plant tissue and the subsequent determination of trace lanthanide and actinide elements by inductively coupled plasma-mass spectrometry

The NiO-samaria doped ceria (SDC) composite powders were prepared by spray pyrolysis technique at temperatures between 400 and 1000 C. The variation of the particle structure was investigated by X-ray diffraction (XRD), X-ray absorption fine structure (XAFS), scanning electron microscope (SEM), and transmission electron microscope (TEM)-energy-dispersive X-ray spectroscopy (EDS). The thermal analysis of raw materials was also carried out. The following facts became clear in this study. Ceria and nickel have been already separated at 400 C. Samaria is amorphous phase below 600 C, and is dissolved in ceria at 600 C or higher. Samaria is distributed uniformly inside the particles before dissolving in ceria. The thermal decomposition temperatures of metal nitrate are: cerium < nickel < samarium. The results of these analyses were explained without contradiction. It was found that it is important to optimize the state of liquid drop before thermal ...

2007-03-15

Melilite formation in a samarium-stabilized #alpha#-sialon ceramic during postsintering heat treatments

Recently there has been much concern with the ability of plants to uptake heavy metals from their surroundings. With the development of instrumental techniques with low detection limits such as inductively coupled plasma-mass spectrometry (ICP-MS), attention is shifting toward achieving faster and more elegant ways of oxidizing the organic material inherent in environmental samples. Closed-vessel microwave dissolution was compared with conventional methods for the determination of concentrations of cerium, samarium, europium, terbium, uranium and thorium in a series of samples from the National Institute of Standards and Technology and from fields in Idaho. The ICP-MS technique exhibited detection limits in parts-per-trillion and linear calibration plots over three orders of magnitude for the elements under study. The results obtained by using nitric acid and hydrogen peroxide in a microwave digestion system for the analysis of reference materials showed close ...

1997-08-01

Effect of hot air aging on properties of EPDM/SmBO3/EVA and EPDM/ATO/EVA composites

The formation of the melilite solid solution phase (M'), Sm_2Si_3_-_xAl_xO_3_+_xN_4_-_x, in an #alpha#-sialon sample of overall composition Sm_0_._6Si_9_._2_8Al_2_._6_9O_1_._3_6N_1_4_._7_6, was studied as a function of time in the temperature interval 1,375--1,525 C. The #alpha#-sialon ceramic contained only minor amounts of the 21R sialon polytype and some residual grain-boundary glass before heat treatment. In situ studies by high-temperature X-ray diffraction were combined with postsintering heat treatment followed by quenching. The M'-phase was found to be formed by two different mechanisms: either crystallization of the residual grain-boundary liquid or a direct decomposition of the #alpha#-sialon phase. The liquid crystallized during the first 10--15 min of heat treatment, yielding a rapid M'-phase formation, and further formation of M'-phase continued at a much slower rate, related to the decomposition of #alpha#-sialon.

British Library Electronic Table of Contents (United Kingdom)

Abstract Ethylene-propylene-diene rubber (EPDM)/samarium borate (SmBO3)/ethylene-vinyl acetate (EVA) copolymer and EPDM/antimony-doped tin oxide (ATO)/EVA composites are aged at 150C for different intervals. Surface modification is used to improve filler to matrix interphase. The main aim is to investigate the effect of filler type and vinyl acetate (VA) content in EVA on stability of EPDM composites. It is found that acidic ATO particles can lower pH level of EPDM composites and then promote the degradation of acetic acid during aging. Moreover, when VA content exceeds 14 wt %, the instable VA content causes more acetic acids escape during aging. With the increasing of aging time, EPDM/SmBO3 control and EPDM/SmBO3/EVA composites tend to become darker while EPDM/ATO and EPDM/ATO/EVA compos...

2011-01-01

The potential of III-V semiconductors as terrestrial photovoltaic devices

Low concentration ratio solar array for low Earth orbit multi-100kW application. Volume 2: Drawings. Final Report

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

2006-07-01

Low concentration ratio solar array for low Earth orbit multi-100 kW application. Volume 1: Design, analysis and development tests. Final Report

A preliminary design effort directed toward a low concentration ratio photovoltaic array system based on 1984 technology and capable of delivering multi-hundred kilowatts (300 kW to 100 kW range) in low Earth orbit is described. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of 0.5 meters x 0.5 meters. Drawings for the preliminary design configuration and for the test hardware that was fabricated for design evaluation and test are provided.

1982-07-01

Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface

A preliminary design effort directed toward a low concentration ratio photovoltaic array system capable of delivering multihundred kilowatts (300 kW to 1000 kW range) in low earth orbit is described. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of .25 sq. m. The structural analysis and design trades leading to the baseline design are discussed. It describes the configuration, as well as optical, thermal and electrical performance analyses that support the design and overall performance estimates ...

1983-07-01

Diffusion mechanism of implanted Be in GaAs

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

2003-05-15

A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of temperature, have been deduced from the ...

2008-01-15

Crystal structure and magnetic properties of Sm{sub 2}ReO{sub 5}

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The ...

1999-04-01

Schottky barrier and homojunction gallium arsenide solar cells

Crystals of disamarium rhenium (IV) pentoxide, Sm{sub 2}ReO{sub 5}, were obtained by subsolidus reaction of samariumsesquioxide and rheniumdioxide (ratio 1:1) in sealed Pt 10Rh tubes at 1673 K. The structure was determined by single-crystal X-ray diffraction. Sm{sub 2}ReO{sub 5} crystallizes in the tetragonal system with unit cell dimensions a = 8.646(3) {angstrom} and c = 5.747(2) {angstrom} and space group P4/n (no. 85) with Z = 4. The structure consists of isolated RE{sub 2}O{sub 8} groups and the (Sm{sub 4}O) chains are inter-connected by common oxygen atoms to form a three-dimensional network. Each Re{sub 2}O{sub 8} group is composed of a pair of rhenium each surrounded by four oxygens with a short Re-Re distance of 2.251(1) {angstrom} indicating a metal-metal bond. Rhenium has the formal oxidation state of +4. The observed magnetizations in the temperature range 1.8 < T < 100 K exhibits antiferromagnetic ordering below 2.4(1) K and obey a Curie-Weiss law modified by a ...

1997-08-01

PVT -- A photovoltaic/thermal concentrator total energy system: Final phase 1 project report. Building opportunities in the U.S. for photovoltaics (PV:BONUS) Two

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar cells were fabricated using several techniques. One involved ...

1983-01-01

Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

United Solar completed its Phase 1 report and its proposal for Phase 2 of the PVBONUS Two program at the end of March 1998. At the same time, it also completed and submitted a proposal to the California Energy Commission PIER program for additional funding to cost-share development and testing of a pre-production model of the PVT-14. It was unsuccessful in both of these proposed efforts. While waiting for the proposal decisions, work continued in April and May to analyze the system design and component decisions described below. This document is a final summation report on the Phase 1 effort of the PVBONUS Two program that describes the key technical issues that United Solar and its subcontractor, Industrial Solar Technology Corporation, worked on in preparation of a Phase 2 award. The decisions described were ones that will guide the design and fabrication of a pre-production prototype of a 1500:1 mirrored concentrator with gallium arsenide cells when United solar ...

1998-12-31