KCNE1 constrains the voltage sensor of Kv7.1 K+ channels.

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Liora Shamgar

Full Text Available Kv7 potassium channels whose mutations cause cardiovascular and neurological disorders are members of the superfamily of voltage-gated K(+ channels, comprising a central pore enclosed by four voltage-sensing domains (VSDs and sharing a homologous S4 sensor sequence. The Kv7.1 pore-forming subunit can interact with various KCNE auxiliary subunits to form K(+ channels with very different gating behaviors. In an attempt to characterize the nature of the promiscuous gating of Kv7.1 channels, we performed a tryptophan-scanning mutagenesis of the S4 sensor and analyzed the mutation-induced perturbations in gating free energy. Perturbing the gating energetics of Kv7.1 bias most of the mutant channels towards the closed state, while fewer mutations stabilize the open state or the inactivated state. In the absence of auxiliary subunits, mutations of specific S4 residues mimic the gating phenotypes produced by co-assembly of Kv7.1 with either KCNE1 or KCNE3. Many S4 perturbations compromise the ability of KCNE1 to properly regulate Kv7.1 channel gating. The tryptophan-induced packing perturbations and cysteine engineering studies in S4 suggest that KCNE1 lodges at the inter-VSD S4-S1 interface between two adjacent subunits, a strategic location to exert its striking action on Kv7.1 gating functions.

Gating mechanism of Kv11.1 (hERG) K+ channels without covalent connection between voltage sensor and pore domains.

Science.gov (United States)

de la Peña, Pilar; Domínguez, Pedro; Barros, Francisco

2018-03-01

Kv11.1 (hERG, KCNH2) is a voltage-gated potassium channel crucial in setting the cardiac rhythm and the electrical behaviour of several non-cardiac cell types. Voltage-dependent gating of Kv11.1 can be reconstructed from non-covalently linked voltage sensing and pore modules (split channels), challenging classical views of voltage-dependent channel activation based on a S4-S5 linker acting as a rigid mechanical lever to open the gate. Progressive displacement of the split position from the end to the beginning of the S4-S5 linker induces an increasing negative shift in activation voltage dependence, a reduced z g value and a more negative ΔG 0 for current activation, an almost complete abolition of the activation time course sigmoid shape and a slowing of the voltage-dependent deactivation. Channels disconnected at the S4-S5 linker near the S4 helix show a destabilization of the closed state(s). Furthermore, the isochronal ion current mode shift magnitude is clearly reduced in the different splits. Interestingly, the progressive modifications of voltage dependence activation gating by changing the split position are accompanied by a shift in the voltage-dependent availability to a methanethiosulfonate reagent of a Cys introduced at the upper S4 helix. Our data demonstrate for the first time that alterations in the covalent connection between the voltage sensor and the pore domains impact on the structural reorganizations of the voltage sensor domain. Also, they support the hypothesis that the S4-S5 linker integrates signals coming from other cytoplasmic domains that constitute either an important component or a crucial regulator of the gating machinery in Kv11.1 and other KCNH channels.

Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

DEFF Research Database (Denmark)

Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

2017-01-01

This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

Voltage-dependent gating of hERG potassium channels

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Yen May eCheng

2012-05-01

Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

Direct evidence that scorpion α-toxins (site-3 modulate sodium channel inactivation by hindrance of voltage-sensor movements.

Directory of Open Access Journals (Sweden)

Zhongming Ma

Full Text Available The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a function of voltage remains incompletely elucidated. Site-3 toxins bind primarily to the extracellular loops connecting transmembrane helical segments S1-S2 and S3-S4 in Domain 4 (D4 and S5-S6 in Domain 1 (D1 and slow fast-inactivation of voltage-gated sodium channels. As S4 of the human skeletal muscle voltage-gated sodium channel, hNav1.4, moves in response to depolarization from the resting to the inactivated state, two D4S4 reporters (R2C and R3C, Arg1451Cys and Arg1454Cys, respectively move from internal to external positions as deduced by reactivity to internally or externally applied sulfhydryl group reagents, methane thiosulfonates (MTS. The changes in reporter reactivity, when cycling rapidly between hyperpolarized and depolarized voltages, enabled determination of the positions of the D4 voltage-sensor and of its rate of movement. Scorpion α-toxin binding impedes D4S4 segment movement during inactivation since the modification rates of R3C in hNav1.4 with methanethiosulfonate (CH3SO2SCH2CH2R, where R = -N(CH33 (+ trimethylammonium, MTSET and benzophenone-4-carboxamidocysteine methanethiosulfonate (BPMTS were slowed ~10-fold in toxin-modified channels. Based upon the different size, hydrophobicity and charge of the two reagents it is unlikely that the change in reactivity is due to direct or indirect blockage of access of this site to reagent in the presence of toxin (Tx, but rather is the result of inability of this segment to move outward to the normal extent and at the normal rate in the toxin-modified channel. Measurements of availability of R3C to internally applied reagent show decreased access (slower rates of thiol reaction providing further evidence for encumbered D4S4 movement in the presence of toxins consistent with the assignment of at least part of the toxin binding site to the region of D4S4 region of the voltage-sensor

Voltage-Dependent Gating of hERG Potassium Channels

Science.gov (United States)

Cheng, Yen May; Claydon, Tom W.

2012-01-01

The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

Common molecular determinants of tarantula huwentoxin-IV inhibition of Na+ channel voltage sensors in domains II and IV.

Science.gov (United States)

Xiao, Yucheng; Jackson, James O; Liang, Songping; Cummins, Theodore R

2011-08-05

The voltage sensors of domains II and IV of sodium channels are important determinants of activation and inactivation, respectively. Animal toxins that alter electrophysiological excitability of muscles and neurons often modify sodium channel activation by selectively interacting with domain II and inactivation by selectively interacting with domain IV. This suggests that there may be substantial differences between the toxin-binding sites in these two important domains. Here we explore the ability of the tarantula huwentoxin-IV (HWTX-IV) to inhibit the activity of the domain II and IV voltage sensors. HWTX-IV is specific for domain II, and we identify five residues in the S1-S2 (Glu-753) and S3-S4 (Glu-811, Leu-814, Asp-816, and Glu-818) regions of domain II that are crucial for inhibition of activation by HWTX-IV. These data indicate that a single residue in the S3-S4 linker (Glu-818 in hNav1.7) is crucial for allowing HWTX-IV to interact with the other key residues and trap the voltage sensor in the closed configuration. Mutagenesis analysis indicates that the five corresponding residues in domain IV are all critical for endowing HWTX-IV with the ability to inhibit fast inactivation. Our data suggest that the toxin-binding motif in domain II is conserved in domain IV. Increasing our understanding of the molecular determinants of toxin interactions with voltage-gated sodium channels may permit development of enhanced isoform-specific voltage-gating modifiers.

Design and Simulation Test of an Open D-Dot Voltage Sensor

Directory of Open Access Journals (Sweden)

Yunjie Bai

2015-09-01

Full Text Available Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation.

Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

Science.gov (United States)

Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar; Akemann, Walther; Knöpfel, Thomas

2008-06-25

Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP) in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

On-site voltage measurement with capacitive sensors on high voltage systems

NARCIS (Netherlands)

Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

2011-01-01

In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

Directory of Open Access Journals (Sweden)

Alicia Lundby

2008-06-01

Full Text Available Ci-VSP contains a voltage-sensing domain (VSD homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

Constraints on voltage sensor movement in the shaker K+ channel.

Science.gov (United States)

Darman, Rachel B; Ivy, Allison A; Ketty, Vina; Blaustein, Robert O

2006-12-01

In nerve and muscle cells, the voltage-gated opening and closing of cation-selective ion channels is accompanied by the translocation of 12-14 elementary charges across the membrane's electric field. Although most of these charges are carried by residues in the S4 helix of the gating module of these channels, the precise nature of their physical movement is currently the topic of spirited debate. Broadly speaking, two classes of models have emerged: those that suggest that small-scale motions can account for the extensive charge displacement, and those that invoke a much larger physical movement. In the most recent incarnation of the latter type of model, which is based on structural and functional data from the archaebacterial K(+) channel KvAP, a "voltage-sensor paddle" comprising a helix-turn-helix of S3-S4 translocates approximately 20 A through the bilayer during the gating cycle (Jiang, Y., A. Lee, J. Chen, V. Ruta, M. Cadene, B.T. Chait, and R. MacKinnon. 2003. Nature. 423:33-41; Jiang, Y., V. Ruta, J. Chen, A. Lee, and R. MacKinnon. 2003. Nature. 423:42-48.; Ruta, V., J. Chen, and R. MacKinnon. 2005. Cell. 123:463-475). We used two methods to test for analogous motions in the Shaker K(+) channel, each examining the aqueous exposure of residues near S3. In the first, we employed a pore-blocking maleimide reagent (Blaustein, R.O., P.A. Cole, C. Williams, and C. Miller. 2000. Nat. Struct. Biol. 7:309-311) to probe for state-dependent changes in the chemical reactivity of substituted cysteines; in the second, we tested the state-dependent accessibility of a tethered biotin to external streptavidin (Qiu, X.Q., K.S. Jakes, A. Finkelstein, and S.L. Slatin. 1994. J. Biol. Chem. 269:7483-7488; Slatin, S.L., X.Q. Qiu, K.S. Jakes, and A. Finkelstein. 1994. Nature. 371:158-161). In both types of experiments, residues predicted to lie near the top of S3 did not exhibit any change in aqueous exposure during the gating cycle. This lack of state dependence argues against

Domain IV voltage-sensor movement is both sufficient and rate limiting for fast inactivation in sodium channels.

Science.gov (United States)

Capes, Deborah L; Goldschen-Ohm, Marcel P; Arcisio-Miranda, Manoel; Bezanilla, Francisco; Chanda, Baron

2013-08-01

Voltage-gated sodium channels are critical for the generation and propagation of electrical signals in most excitable cells. Activation of Na(+) channels initiates an action potential, and fast inactivation facilitates repolarization of the membrane by the outward K(+) current. Fast inactivation is also the main determinant of the refractory period between successive electrical impulses. Although the voltage sensor of domain IV (DIV) has been implicated in fast inactivation, it remains unclear whether the activation of DIV alone is sufficient for fast inactivation to occur. Here, we functionally neutralize each specific voltage sensor by mutating several critical arginines in the S4 segment to glutamines. We assess the individual role of each voltage-sensing domain in the voltage dependence and kinetics of fast inactivation upon its specific inhibition. We show that movement of the DIV voltage sensor is the rate-limiting step for both development and recovery from fast inactivation. Our data suggest that activation of the DIV voltage sensor alone is sufficient for fast inactivation to occur, and that activation of DIV before channel opening is the molecular mechanism for closed-state inactivation. We propose a kinetic model of sodium channel gating that can account for our major findings over a wide voltage range by postulating that DIV movement is both necessary and sufficient for fast inactivation.

A novel NaV1.5 voltage sensor mutation associated with severe atrial and ventricular arrhythmias.

Science.gov (United States)

Wang, Hong-Gang; Zhu, Wandi; Kanter, Ronald J; Silva, Jonathan R; Honeywell, Christina; Gow, Robert M; Pitt, Geoffrey S

2016-03-01

Inherited autosomal dominant mutations in cardiac sodium channels (NaV1.5) cause various arrhythmias, such as long QT syndrome and Brugada syndrome. Although dozens of mutations throughout the protein have been reported, there are few reported mutations within a voltage sensor S4 transmembrane segment and few that are homozygous. Here we report analysis of a novel lidocaine-sensitive recessive mutation, p.R1309H, in the NaV1.5 DIII/S4 voltage sensor in a patient with a complex arrhythmia syndrome. We expressed the wild type or mutant NaV1.5 heterologously for analysis with the patch-clamp and voltage clamp fluorometry (VCF) techniques. p.R1309H depolarized the voltage-dependence of activation, hyperpolarized the voltage-dependence of inactivation, and slowed recovery from inactivation, thereby reducing the channel availability at physiologic membrane potentials. Additionally, p.R1309H increased the "late" Na(+) current. The location of the mutation in DIIIS4 prompted testing for a gating pore current. We observed an inward current at hyperpolarizing voltages that likely exacerbates the loss-of-function defects at resting membrane potentials. Lidocaine reduced the gating pore current. The p.R1309H homozygous NaV1.5 mutation conferred both gain-of-function and loss-of-function effects on NaV1.5 channel activity. Reduction of a mutation-induced gating pore current by lidocaine suggested a therapeutic mechanism. Copyright © 2016 Elsevier Ltd. All rights reserved.

Asymmetric functional contributions of acidic and aromatic side chains in sodium channel voltage-sensor domains

DEFF Research Database (Denmark)

Pless, Stephan Alexander; Elstone, Fisal D; Niciforovic, Ana P

2014-01-01

largely enigmatic. To this end, natural and unnatural side chain substitutions were made in the S2 hydrophobic core (HC), the extracellular negative charge cluster (ENC), and the intracellular negative charge cluster (INC) of the four VSDs of the skeletal muscle sodium channel isoform (NaV1......Voltage-gated sodium (NaV) channels mediate electrical excitability in animals. Despite strong sequence conservation among the voltage-sensor domains (VSDs) of closely related voltage-gated potassium (KV) and NaV channels, the functional contributions of individual side chains in Nav VSDs remain.......4). The results show that the highly conserved aromatic side chain constituting the S2 HC makes distinct functional contributions in each of the four NaV domains. No obvious cation-pi interaction exists with nearby S4 charges in any domain, and natural and unnatural mutations at these aromatic sites produce...

Tarantula huwentoxin-IV inhibits neuronal sodium channels by binding to receptor site 4 and trapping the domain ii voltage sensor in the closed configuration.

Science.gov (United States)

Xiao, Yucheng; Bingham, Jon-Paul; Zhu, Weiguo; Moczydlowski, Edward; Liang, Songping; Cummins, Theodore R

2008-10-03

Peptide toxins with high affinity, divergent pharmacological functions, and isoform-specific selectivity are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a number of interesting inhibitors have been reported from tarantula venoms, little is known about the mechanism for their interaction with VGSCs. We show that huwentoxin-IV (HWTX-IV), a 35-residue peptide from tarantula Ornithoctonus huwena venom, preferentially inhibits neuronal VGSC subtypes rNav1.2, rNav1.3, and hNav1.7 compared with muscle subtypes rNav1.4 and hNav1.5. Of the five VGSCs examined, hNav1.7 was most sensitive to HWTX-IV (IC(50) approximately 26 nM). Following application of 1 microm HWTX-IV, hNav1.7 currents could only be elicited with extreme depolarizations (>+100 mV). Recovery of hNav1.7 channels from HWTX-IV inhibition could be induced by extreme depolarizations or moderate depolarizations lasting several minutes. Site-directed mutagenesis analysis indicated that the toxin docked at neurotoxin receptor site 4 located at the extracellular S3-S4 linker of domain II. Mutations E818Q and D816N in hNav1.7 decreased toxin affinity for hNav1.7 by approximately 300-fold, whereas the reverse mutations in rNav1.4 (N655D/Q657E) and the corresponding mutations in hNav1.5 (R812D/S814E) greatly increased the sensitivity of the muscle VGSCs to HWTX-IV. Our data identify a novel mechanism for sodium channel inhibition by tarantula toxins involving binding to neurotoxin receptor site 4. In contrast to scorpion beta-toxins that trap the IIS4 voltage sensor in an outward configuration, we propose that HWTX-IV traps the voltage sensor of domain II in the inward, closed configuration.

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

Science.gov (United States)

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

Science.gov (United States)

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

Optical sensors for the measurement of electric current and voltage

Energy Technology Data Exchange (ETDEWEB)

Rutgers, W R; Hulshof, H J.M.; Laurensse, I J; van der Wey, A H

1987-01-01

Optical sensors for the measurement of electrical current and voltage were developed for application in electric power systems. The current sensor, based on the Faraday effect in a monomode glass fiber, and the voltage sensor, based on the transverse Pockels effect in a crystal, are demonstrated in wide-band (10 MHz) interference-free measurements of pulsed currents and impulse voltages.

Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

KAUST Repository

Savagatrup, Suchol

2017-09-27

Carbon monoxide (CO) outcompetes oxygen when binding to the iron center of hemeproteins, leading to a reduction in blood oxygen level and acute poisoning. Harvesting the strong specific interaction between CO and the iron porphyrin provides a highly selective and customizable sensor. We report the development of chemiresistive sensors with voltage-activated sensitivity for the detection of CO comprising iron porphyrin and functionalized single-walled carbon nanotubes (F-SWCNTs). Modulation of the gate voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV/Vis spectroscopy, differential pulse voltammetry, and density functional theory reveal that the in situ reduction of FeIII to FeII enhances the interaction between the F-SWCNTs and CO. Our results illustrate a new mode of sensors wherein redox active recognition units are voltage-activated to give enhanced and highly specific responses.

Mechanism of electromechanical coupling in voltage-gated potassium channels

Directory of Open Access Journals (Sweden)

Rikard eBlunck

2012-09-01

Full Text Available Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt and vertical displacement in order to bring 3-4 e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy and molecular dynamics simulations. Evidently, the S4-S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii insight as to how the voltage sensor and pore domain influence one another; and (iii theoretical predictions on the movement of the cytosolic face of the KV channels

Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

KAUST Repository

Savagatrup, Suchol; Schroeder, Vera; He, Xin; Lin, Sibo; He, Maggie; Yassine, Omar; Salama, Khaled N.; Zhang, Xixiang; Swager, Timothy M.

2017-01-01

voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV

Intermediate state trapping of a voltage sensor

DEFF Research Database (Denmark)

Lacroix, Jérôme J; Pless, Stephan Alexander; Maragliano, Luca

2012-01-01

Voltage sensor domains (VSDs) regulate ion channels and enzymes by undergoing conformational changes depending on membrane electrical signals. The molecular mechanisms underlying the VSD transitions are not fully understood. Here, we show that some mutations of I241 in the S1 segment of the Shaker...... Kv channel positively shift the voltage dependence of the VSD movement and alter the functional coupling between VSD and pore domains. Among the I241 mutants, I241W immobilized the VSD movement during activation and deactivation, approximately halfway between the resting and active states......, and drastically shifted the voltage activation of the ionic conductance. This phenotype, which is consistent with a stabilization of an intermediate VSD conformation by the I241W mutation, was diminished by the charge-conserving R2K mutation but not by the charge-neutralizing R2Q mutation. Interestingly, most...

High-voltage pixel sensors for ATLAS upgrade

Energy Technology Data Exchange (ETDEWEB)

Perić, I., E-mail: ivan.peric@ziti.uni-heidelberg.de [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Kreidl, C.; Fischer, P. [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M. [CPPM, Marseille (France); Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B. [CERN, Geneve (Switzerland); Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A. [University of Geneve (Switzerland); and others

2014-11-21

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

Combinatorial mutagenesis of the voltage-sensing domain enables the optical resolution of action potentials firing at 60 Hz by a genetically encoded fluorescent sensor of membrane potential.

Science.gov (United States)

Piao, Hong Hua; Rajakumar, Dhanarajan; Kang, Bok Eum; Kim, Eun Ha; Baker, Bradley J

2015-01-07

ArcLight is a genetically encoded fluorescent voltage sensor using the voltage-sensing domain of the voltage-sensing phosphatase from Ciona intestinalis that gives a large but slow-responding optical signal in response to changes in membrane potential (Jin et al., 2012). Fluorescent voltage sensors using the voltage-sensing domain from other species give faster yet weaker optical signals (Baker et al., 2012; Han et al., 2013). Sequence alignment of voltage-sensing phosphatases from different species revealed conserved polar and charged residues at 7 aa intervals in the S1-S3 transmembrane segments of the voltage-sensing domain, suggesting potential coil-coil interactions. The contribution of these residues to the voltage-induced optical signal was tested using a cassette mutagenesis screen by flanking each transmembrane segment with unique restriction sites to allow for the testing of individual mutations in each transmembrane segment, as well as combinations in all four transmembrane segments. Addition of a counter charge in S2 improved the kinetics of the optical response. A double mutation in the S4 domain dramatically reduced the slow component of the optical signal seen in ArcLight. Combining that double S4 mutant with the mutation in the S2 domain yielded a probe with kinetics voltage-sensing domain could potentially lead to fluorescent sensors capable of optically resolving neuronal inhibition and subthreshold synaptic activity. Copyright © 2015 the authors 0270-6474/15/350372-15$15.00/0.

Integrative Approach with Electrophysiological and Theoretical Methods Reveals a New Role of S4 Positively Charged Residues in PKD2L1 Channel Voltage-Sensing.

Science.gov (United States)

Numata, Tomohiro; Tsumoto, Kunichika; Yamada, Kazunori; Kurokawa, Tatsuki; Hirose, Shinichi; Nomura, Hideki; Kawano, Mitsuhiro; Kurachi, Yoshihisa; Inoue, Ryuji; Mori, Yasuo

2017-08-29

Numerical model-based simulations provide important insights into ion channel gating when experimental limitations exist. Here, a novel strategy combining numerical simulations with patch clamp experiments was used to investigate the net positive charges in the putative transmembrane segment 4 (S4) of the atypical, positively-shifted voltage-dependence of polycystic kidney disease 2-like 1 (PKD2L1) channel. Charge-neutralising mutations (K452Q, K455Q and K461Q) in S4 reduced gating charges, positively shifted the Boltzmann-type activation curve [i.e., open probability (P open )-V curve] and altered the time-courses of activation/deactivation of PKD2L1, indicating that this region constitutes part of a voltage sensor. Numerical reconstruction of wild-type (WT) and mutant PKD2L1-mediated currents necessitated, besides their voltage-dependent gating parameters, a scaling factor that describes the voltage-dependence of maximal conductance, G max . Subsequent single-channel conductance (γ) measurements revealed that voltage-dependence of G max in WT can be explained by the inward-rectifying property of γ, which is greatly changed in PKD2L1 mutants. Homology modelling based on PKD2 and Na V Ab structures suggest that such voltage dependence of P open and γ in PKD2L1 could both reflect the charged state of the S4 domain. The present conjunctive experimental and theoretical approaches provide a framework to explore the undetermined mechanism(s) regulating TRP channels that possess non-classical voltage-dependent properties.

A limited 4 Å radial displacement of the S4-S5 linker is sufficient for internal gate closing in Kv channels.

Science.gov (United States)

Faure, Élise; Starek, Greg; McGuire, Hugo; Bernèche, Simon; Blunck, Rikard

2012-11-16

Voltage-gated ion channels are responsible for the generation of action potentials in our nervous system. Conformational rearrangements in their voltage sensor domains in response to changes of the membrane potential control pore opening and thus ion conduction. Crystal structures of the open channel in combination with a wealth of biophysical data and molecular dynamics simulations led to a consensus on the voltage sensor movement. However, the coupling between voltage sensor movement and pore opening, the electromechanical coupling, occurs at the cytosolic face of the channel, from where no structural information is available yet. In particular, the question how far the cytosolic pore gate has to close to prevent ion conduction remains controversial. In cells, spectroscopic methods are hindered because labeling of internal sites remains difficult, whereas liposomes or detergent solutions containing purified ion channels lack voltage control. Here, to overcome these problems, we controlled the state of the channel by varying the lipid environment. This way, we directly measured the position of the S4-S5 linker in both the open and the closed state of a prokaryotic Kv channel (KvAP) in a lipid environment using Lanthanide-based resonance energy transfer. We were able to reconstruct the movement of the covalent link between the voltage sensor and the pore domain and used this information as restraints for molecular dynamics simulations of the closed state structure. We found that a small decrease of the pore radius of about 3-4 Å is sufficient to prevent ion permeation through the pore.

Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

Science.gov (United States)

Lörinczi, Éva; Gómez-Posada, Juan Camilo; de La Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

2015-03-01

Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

Scorpion β-toxin interference with NaV channel voltage sensor gives rise to excitatory and depressant modes

Science.gov (United States)

Leipold, Enrico; Borges, Adolfo

2012-01-01

Scorpion β toxins, peptides of ∼70 residues, specifically target voltage-gated sodium (NaV) channels to cause use-dependent subthreshold channel openings via a voltage–sensor trapping mechanism. This excitatory action is often overlaid by a not yet understood depressant mode in which NaV channel activity is inhibited. Here, we analyzed these two modes of gating modification by β-toxin Tz1 from Tityus zulianus on heterologously expressed NaV1.4 and NaV1.5 channels using the whole cell patch-clamp method. Tz1 facilitated the opening of NaV1.4 in a use-dependent manner and inhibited channel opening with a reversed use dependence. In contrast, the opening of NaV1.5 was exclusively inhibited without noticeable use dependence. Using chimeras of NaV1.4 and NaV1.5 channels, we demonstrated that gating modification by Tz1 depends on the specific structure of the voltage sensor in domain 2. Although residue G658 in NaV1.4 promotes the use-dependent transitions between Tz1 modification phenotypes, the equivalent residue in NaV1.5, N803, abolishes them. Gating charge neutralizations in the NaV1.4 domain 2 voltage sensor identified arginine residues at positions 663 and 669 as crucial for the outward and inward movement of this sensor, respectively. Our data support a model in which Tz1 can stabilize two conformations of the domain 2 voltage sensor: a preactivated outward position leading to NaV channels that open at subthreshold potentials, and a deactivated inward position preventing channels from opening. The results are best explained by a two-state voltage–sensor trapping model in that bound scorpion β toxin slows the activation as well as the deactivation kinetics of the voltage sensor in domain 2. PMID:22450487

An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

CERN Document Server

AUTHOR|(CDS)2261553

2017-01-01

An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

Imaging Voltage in Genetically Defined Neuronal Subpopulations with a Cre Recombinase-Targeted Hybrid Voltage Sensor.

Science.gov (United States)

Bayguinov, Peter O; Ma, Yihe; Gao, Yu; Zhao, Xinyu; Jackson, Meyer B

2017-09-20

Genetically encoded voltage indicators create an opportunity to monitor electrical activity in defined sets of neurons as they participate in the complex patterns of coordinated electrical activity that underlie nervous system function. Taking full advantage of genetically encoded voltage indicators requires a generalized strategy for targeting the probe to genetically defined populations of cells. To this end, we have generated a mouse line with an optimized hybrid voltage sensor (hVOS) probe within a locus designed for efficient Cre recombinase-dependent expression. Crossing this mouse with Cre drivers generated double transgenics expressing hVOS probe in GABAergic, parvalbumin, and calretinin interneurons, as well as hilar mossy cells, new adult-born neurons, and recently active neurons. In each case, imaging in brain slices from male or female animals revealed electrically evoked optical signals from multiple individual neurons in single trials. These imaging experiments revealed action potentials, dynamic aspects of dendritic integration, and trial-to-trial fluctuations in response latency. The rapid time response of hVOS imaging revealed action potentials with high temporal fidelity, and enabled accurate measurements of spike half-widths characteristic of each cell type. Simultaneous recording of rapid voltage changes in multiple neurons with a common genetic signature offers a powerful approach to the study of neural circuit function and the investigation of how neural networks encode, process, and store information. SIGNIFICANCE STATEMENT Genetically encoded voltage indicators hold great promise in the study of neural circuitry, but realizing their full potential depends on targeting the sensor to distinct cell types. Here we present a new mouse line that expresses a hybrid optical voltage sensor under the control of Cre recombinase. Crossing this line with Cre drivers generated double-transgenic mice, which express this sensor in targeted cell types. In

Determination of the aging offset voltage of AMR sensors based on accelerated degradation test

NARCIS (Netherlands)

Zambrano Constantini, A.C.; Kerkhoff, Hans G.

Usually Anisotropic Magnetoresistance angle sensors are configured with two Wheatstone bridges, but an undesirable offset voltage included in the sensor output affects its accuracy. The total offset voltage combines a voltage due to resistance mismatches during manufacturing and a voltage from

Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

Science.gov (United States)

Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

2015-12-30

A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

Theoretical analysis of magnetic sensor output voltage

International Nuclear Information System (INIS)

Liu Haishun; Dun Chaochao; Dou Linming; Yang Weiming

2011-01-01

The output voltage is an important parameter to determine the stress state in magnetic stress measurement, the relationship between the output voltage and the difference in the principal stresses was investigated by a comprehensive application of magnetic circuit theory, magnetization theory, stress analysis as well as the law of electromagnetic induction, and a corresponding quantitative equation was derived. It is drawn that the output voltage is proportional to the difference in the principal stresses, and related to the angle between the principal stress and the direction of the sensor. This investigation provides a theoretical basis for the principle stresses measurement by output voltage. - Research highlights: → A comprehensive investigation of magnetic stress signal. → Derived a quantitative equation about output voltage and the principal stresses. → The output voltage is proportional to the difference of the principal stresses. → Provide a theoretical basis for the principle stresses measurement.

Opposite effects of the S4-S5 linker and PIP2 on voltage-gated channel function: KCNQ1/KCNE1 and other channels

Directory of Open Access Journals (Sweden)

Frank S Choveau

2012-07-01

Full Text Available Voltage-gated potassium (Kv channels are tetramers, each subunit presenting six transmembrane segments (S1-S6, with each S1-S4 segments forming a voltage-sensing domain (VSD and the four S5-S6 forming both the conduction pathway and its gate. S4 segments control the opening of the intracellular activation gate in response to changes in membrane potential. Crystal structures of several voltage-gated ion channels in combination with biophysical and mutagenesis studies highlighted the critical role of the S4-S5 linker (S4S5L and of the S6 C-terminal part (S6T in the coupling between the VSD and the activation gate. Several mechanisms have been proposed to describe the coupling at a molecular scale. This review summarizes the mechanisms suggested for various voltage-gated ion channels, including a mechanism that we described for KCNQ1, in which S4S5L is acting like a ligand binding to S6T to stabilize the channel in a closed state. As discussed in this review, this mechanism may explain the reverse response to depolarization in HCN-like channels. As opposed to S4S5L, the phosphoinositide, phosphatidylinositol 4,5-bisphosphate (PIP2, stabilizes KCNQ1 channel in an open state. Many other ion channels (not only voltage-gated require PIP2 to function properly, confirming its crucial importance as an ion channel co-factor. This is highlighted in cases in which an altered regulation of ion channels by PIP2 leads to channelopathies, as observed for KCNQ1. This review summarizes the state of the art on the two regulatory mechanisms that are critical for KCNQ1 and other voltage-gated channels function (PIP2 and S4-S5L, and assesses their potential physiological and pathophysiological roles.

High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

Directory of Open Access Journals (Sweden)

M. Drinovsky

2015-12-01

Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

Niflumic acid alters gating of HCN2 pacemaker channels by interaction with the outer region of S4 voltage sensing domains.

Science.gov (United States)

Cheng, Lan; Sanguinetti, Michael C

2009-05-01

Niflumic acid, 2-[[3-(trifluoromethyl)phenyl]amino]pyridine-3-carboxylic acid (NFA), is a nonsteroidal anti-inflammatory drug that also blocks or modifies the gating of many ion channels. Here, we investigated the effects of NFA on hyperpolarization-activated cyclic nucleotide-gated cation (HCN) pacemaker channels expressed in X. laevis oocytes using site-directed mutagenesis and the two-electrode voltage-clamp technique. Extracellular NFA acted rapidly and caused a slowing of activation and deactivation and a hyperpolarizing shift in the voltage dependence of HCN2 channel activation (-24.5 +/- 1.2 mV at 1 mM). Slowed channel gating and reduction of current magnitude was marked in oocytes treated with NFA, while clamped at 0 mV but minimal in oocytes clamped at -100 mV, indicating the drug preferentially interacts with channels in the closed state. NFA at 0.1 to 3 mM shifted the half-point for channel activation in a concentration-dependent manner, with an EC(50) of 0.54 +/- 0.068 mM and a predicted maximum shift of -38 mV. NFA at 1 mM also reduced maximum HCN2 conductance by approximately 20%, presumably by direct block of the pore. The rapid onset and state-dependence of NFA-induced changes in channel gating suggests an interaction with the extracellular region of the S4 transmembrane helix, the primary voltage-sensing domain of HCN2. Neutralization (by mutation to Gln) of any three of the outer four basic charged residues in S4, but not single mutations, abrogated the NFA-induced shift in channel activation. We conclude that NFA alters HCN2 gating by interacting with the extracellular end of the S4 voltage sensor domains.

The free energy barrier for arginine gating charge translation is altered by mutations in the voltage sensor domain.

Directory of Open Access Journals (Sweden)

Christine S Schwaiger

Full Text Available The gating of voltage-gated ion channels is controlled by the arginine-rich S4 helix of the voltage-sensor domain moving in response to an external potential. Recent studies have suggested that S4 moves in three to four steps to open the conducting pore, thus visiting several intermediate conformations during gating. However, the exact conformational changes are not known in detail. For instance, it has been suggested that there is a local rotation in the helix corresponding to short segments of a 3(10-helix moving along S4 during opening and closing. Here, we have explored the energetics of the transition between the fully open state (based on the X-ray structure and the first intermediate state towards channel closing (C1, modeled from experimental constraints. We show that conformations within 3 Å of the X-ray structure are obtained in simulations starting from the C1 model, and directly observe the previously suggested sliding 3(10-helix region in S4. Through systematic free energy calculations, we show that the C1 state is a stable intermediate conformation and determine free energy profiles for moving between the states without constraints. Mutations indicate several residues in a narrow hydrophobic band in the voltage sensor contribute to the barrier between the open and C1 states, with F233 in the S2 helix having the largest influence. Substitution for smaller amino acids reduces the transition cost, while introduction of a larger ring increases it, largely confirming experimental activation shift results. There is a systematic correlation between the local aromatic ring rotation, the arginine barrier crossing, and the corresponding relative free energy. In particular, it appears to be more advantageous for the F233 side chain to rotate towards the extracellular side when arginines cross the hydrophobic region.

Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

Science.gov (United States)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael A.

2016-04-26

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylinder when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

Optical sensor based on a single CdS nanobelt.

Science.gov (United States)

Li, Lei; Yang, Shuming; Han, Feng; Wang, Liangjun; Zhang, Xiaotong; Jiang, Zhuangde; Pan, Anlian

2014-04-23

In this paper, an optical sensor based on a cadmium sulfide (CdS) nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT) method. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optical sensor was fabricated by the electron beam lithography (EBL) technique, and the device current-voltage results showed back-to-back Schottky diode characteristics. The photosensitivity, dark current and the decay time of the sensor were 4 × 10⁴, 31 ms and 0.2 pA, respectively. The high photosensitivity and the short decay time were because of the exponential dependence of photocurrent on the number of the surface charges and the configuration of the back to back Schottky junctions.

Sensing voltage across lipid membranes

Science.gov (United States)

Swartz, Kenton J.

2009-01-01

The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

Structure and hydration of membranes embedded with voltage-sensing domains.

Science.gov (United States)

Krepkiy, Dmitriy; Mihailescu, Mihaela; Freites, J Alfredo; Schow, Eric V; Worcester, David L; Gawrisch, Klaus; Tobias, Douglas J; White, Stephen H; Swartz, Kenton J

2009-11-26

Despite the growing number of atomic-resolution membrane protein structures, direct structural information about proteins in their native membrane environment is scarce. This problem is particularly relevant in the case of the highly charged S1-S4 voltage-sensing domains responsible for nerve impulses, where interactions with the lipid bilayer are critical for the function of voltage-activated ion channels. Here we use neutron diffraction, solid-state nuclear magnetic resonance (NMR) spectroscopy and molecular dynamics simulations to investigate the structure and hydration of bilayer membranes containing S1-S4 voltage-sensing domains. Our results show that voltage sensors adopt transmembrane orientations and cause a modest reshaping of the surrounding lipid bilayer, and that water molecules intimately interact with the protein within the membrane. These structural findings indicate that voltage sensors have evolved to interact with the lipid membrane while keeping energetic and structural perturbations to a minimum, and that water penetrates the membrane, to hydrate charged residues and shape the transmembrane electric field.

Design of the corona current measurement sensor with wide bandwidth under dc ultra-high-voltage environment

International Nuclear Information System (INIS)

Liu, Yingyi; Yuan, Haiwen; Yang, Qinghua; Cui, Yong

2011-01-01

The research in the field of corona discharge, which is one of the key technologies, can help us to realize ultra-high-voltage (UHV) power transmission. This paper proposes a new sampling resistance sensor to measure the dc UHV corona current in a wide band. By designing the structural and distributed parameters of the sensor, the UHV dielectric breakdown performance and the wide-band measuring characteristics of the sensor are satisfied. A high-voltage discharge test shows that the designed sensor can work under a 1200 kV dc environment without the occurrence of corona discharge. A frequency characteristic test shows that the measuring bandwidth of the sensor can be improved from the current 4.5 to 20 MHz. The test results in an actual dc UHV transmission line demonstrate that the sensor can accurately measure the corona current under the dc UHV environment

Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

DEFF Research Database (Denmark)

Furst, Claus Efdmann

This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power....../low voltage interface circuitry is presented. It is demonstrated that an amplifier optimized for a capacitive microphone implemented in a standard 0.7 micron CMOS technology competes well with a traditional JFET amplifier. Furthermore a low power/low voltage 3rd order Sigma-Delta modulator is presented...

Nonsensing residues in S3-S4 linker's C terminus affect the voltage sensor set point in K+ channels.

Science.gov (United States)

Carvalho-de-Souza, Joao L; Bezanilla, Francisco

2018-02-05

Voltage sensitivity in ion channels is a function of highly conserved arginine residues in their voltage-sensing domains (VSDs), but this conservation does not explain the diversity in voltage dependence among different K + channels. Here we study the non-voltage-sensing residues 353 to 361 in Shaker K + channels and find that residues 358 and 361 strongly modulate the voltage dependence of the channel. We mutate these two residues into all possible remaining amino acids (AAs) and obtain Q-V and G-V curves. We introduced the nonconducting W434F mutation to record sensing currents in all mutants except L361R, which requires K + depletion because it is affected by W434F. By fitting Q-Vs with a sequential three-state model for two voltage dependence-related parameters ( V 0 , the voltage-dependent transition from the resting to intermediate state and V 1 , from the latter to the active state) and G-Vs with a two-state model for the voltage dependence of the pore domain parameter ( V 1/2 ), Spearman's coefficients denoting variable relationships with hydrophobicity, available area, length, width, and volume of the AAs in 358 and 361 positions could be calculated. We find that mutations in residue 358 shift Q-Vs and G-Vs along the voltage axis by affecting V 0 , V 1 , and V 1/2 according to the hydrophobicity of the AA. Mutations in residue 361 also shift both curves, but V 0 is affected by the hydrophobicity of the AA in position 361, whereas V 1 and V 1/2 are affected by size-related AA indices. Small-to-tiny AAs have opposite effects on V 1 and V 1/2 in position 358 compared with 361. We hypothesize possible coordination points in the protein that residues 358 and 361 would temporarily and differently interact with in an intermediate state of VSD activation. Our data contribute to the accumulating knowledge of voltage-dependent ion channel activation by adding functional information about the effects of so-called non-voltage-sensing residues on VSD dynamics. © 2018

Optical Sensor Based on a Single CdS Nanobelt

Directory of Open Access Journals (Sweden)

Lei Li

2014-04-01

Full Text Available In this paper, an optical sensor based on a cadmium sulfide (CdS nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT method. X-Ray Diffraction (XRD and Transmission Electron Microscopy (TEM results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optical sensor was fabricated by the electron beam lithography (EBL technique, and the device current-voltage results showed back-to-back Schottky diode characteristics. The photosensitivity, dark current and the decay time of the sensor were 4 × 104, 31 ms and 0.2 pA, respectively. The high photosensitivity and the short decay time were because of the exponential dependence of photocurrent on the number of the surface charges and the configuration of the back to back Schottky junctions.

Potential role of voltage-sensing phosphatases in regulation of cell structure through the production of PI(3,4)P2.

Science.gov (United States)

Yamaguchi, Shinji; Kurokawa, Tatsuki; Taira, Ikuko; Aoki, Naoya; Sakata, Souhei; Okamura, Yasushi; Homma, Koichi J

2014-04-01

Voltage-sensing phosphatase, VSP, consists of the transmembrane domain, operating as the voltage sensor, and the cytoplasmic domain with phosphoinositide-phosphatase activities. The voltage sensor tightly couples with the cytoplasmic phosphatase and membrane depolarization induces dephosphorylation of several species of phosphoinositides. VSP gene is conserved from urochordate to human. There are some diversities among VSP ortholog proteins; range of voltage of voltage sensor motions as well as substrate selectivity. In contrast with recent understandings of biophysical mechanisms of VSPs, little is known about its physiological roles. Here we report that chick ortholog of VSP (designated as Gg-VSP) induces morphological feature of cell process outgrowths with round cell body in DF-1 fibroblasts upon its forced expression. Expression of the voltage sensor mutant, Gg-VSPR153Q with shifted voltage dependence to a lower voltage led to more frequent changes of cell morphology than the wild-type protein. Coexpression of PTEN that dephosphorylates PI(3,4)P2 suppressed this effect by Gg-VSP, indicating that the increase of PI(3,4)P2 leads to changes of cell shape. In addition, visualization of PI(3,4)P2 with the fluorescent protein fused with the TAPP1-derived pleckstrin homology (PH) domain suggested that Gg-VSP influenced the distribution of PI(3,4)P2 . These findings raise a possibility that one of the VSP's functions could be to regulate cell morphology through voltage-sensitive tuning of phosphoinositide profile. © 2013 Wiley Periodicals, Inc.

Development of a high throughput single-particle screening for inorganic semiconductor nanorods as neural voltage sensor

Science.gov (United States)

Kuo, Yung; Park, Kyoungwon; Li, Jack; Ingargiola, Antonino; Park, Joonhyuck; Shvadchak, Volodymyr; Weiss, Shimon

2017-08-01

Monitoring membrane potential in neurons requires sensors with minimal invasiveness, high spatial and temporal (sub-ms) resolution, and large sensitivity for enabling detection of sub-threshold activities. While organic dyes and fluorescent proteins have been developed to possess voltage-sensing properties, photobleaching, cytotoxicity, low sensitivity, and low spatial resolution have obstructed further studies. Semiconductor nanoparticles (NPs), as prospective voltage sensors, have shown excellent sensitivity based on Quantum confined Stark effect (QCSE) at room temperature and at single particle level. Both theory and experiment have shown their voltage sensitivity can be increased significantly via material, bandgap, and structural engineering. Based on theoretical calculations, we synthesized one of the optimal candidates for voltage sensors: 12 nm type-II ZnSe/CdS nanorods (NRs), with an asymmetrically located seed. The voltage sensitivity and spectral shift were characterized in vitro using spectrally-resolved microscopy using electrodes grown by thin film deposition, which "sandwich" the NRs. We characterized multiple batches of such NRs and iteratively modified the synthesis to achieve higher voltage sensitivity (ΔF/F> 10%), larger spectral shift (>5 nm), better homogeneity, and better colloidal stability. Using a high throughput screening method, we were able to compare the voltage sensitivity of our NRs with commercial spherical quantum dots (QDs) with single particle statistics. Our method of high throughput screening with spectrally-resolved microscope also provides a versatile tool for studying single particles spectroscopy under field modulation.

Design and experimental investigation of a low-voltage thermoelectric energy harvesting system for wireless sensor nodes

International Nuclear Information System (INIS)

Guan, Mingjie; Wang, Kunpeng; Xu, Dazheng; Liao, Wei-Hsin

2017-01-01

Highlights: • A thermoelectric energy harvesting system for wireless sensor nodes is designed. • An ultra-low voltage self-startup is implemented. • Maximum power point tracking and low power designs are applied for high efficiency. • Efficiency of 44.2–75.4% is obtained with open-circuit voltage of 84–400 mV. • System efficiency is higher than the commercial BQ25504 converter. - Abstract: A thermoelectric energy harvesting system designed to harvest tens of microwatts to several milliwatts from low-voltage thermoelectric generators is presented in this paper. The proposed system is based-on a two-stage boost scheme with self-startup ability. A maximum power point tracking technique based on the open-circuit voltage is adopted in the boost converter for high efficiency. Experimental results indicate that the proposed system can harvest thermoelectric energy and run a microcontroller unit and a wireless sensor node under low input voltage and power with high efficiency. The harvest system and wireless sensor node can be self-powered with minimum thermoelectric open-circuit voltage as 62 mV and input power of 84 μW. With a self-startup scheme, the proposed system can self-start with a 20 mV input voltage. Low power designs are applied in the system to reduce the quiescent dissipation power. It results in better performance considering the conversion efficiency and self-startup ability compared to commercial boost systems used for thermal energy harvesting.

Co-wound voltage sensor R ampersand D for TPX magnets

International Nuclear Information System (INIS)

Chaplin, M.R.; Martovetsky, N.N.; Zbasnik, J.

1995-01-01

The Tokamak Physics Experiment (TPX) will be the first tokamak to use superconducting cable-in-conduit-conductors (CICC) in all Poloidal Field (PF) ampersand Toroidal Field (TF) magnets. Conventional quench detection, the measurement of small resistive normal-zone voltages ( 4 kV). In the quench detection design for TPX, we have considered several different locations for internal co-wound voltage sensors in the cable cross-section as the primary mechanism to cancel this inductive noise. The Noise Rejection Experiment (NRE) at LLNL and the Noise Injection Experiment (NIE) at MIT have been designed to evaluate which internal locations will produce the best inductive-noise cancellation, and provide us with experimental data to calibrate analysis codes. The details of the experiments and resulting data are presented

Contributions of counter-charge in a potassium channel voltage-sensor domain

DEFF Research Database (Denmark)

Pless, Stephan Alexander; Galpin, Jason D; Niciforovic, Ana P

2011-01-01

Voltage-sensor domains couple membrane potential to conformational changes in voltage-gated ion channels and phosphatases. Highly coevolved acidic and aromatic side chains assist the transfer of cationic side chains across the transmembrane electric field during voltage sensing. We investigated...... the functional contribution of negative electrostatic potentials from these residues to channel gating and voltage sensing with unnatural amino acid mutagenesis, electrophysiology, voltage-clamp fluorometry and ab initio calculations. The data show that neutralization of two conserved acidic side chains...

Gating transitions in the selectivity filter region of a sodium channel are coupled to the domain IV voltage sensor.

Science.gov (United States)

Capes, Deborah L; Arcisio-Miranda, Manoel; Jarecki, Brian W; French, Robert J; Chanda, Baron

2012-02-14

Voltage-dependent ion channels are crucial for generation and propagation of electrical activity in biological systems. The primary mechanism for voltage transduction in these proteins involves the movement of a voltage-sensing domain (D), which opens a gate located on the cytoplasmic side. A distinct conformational change in the selectivity filter near the extracellular side has been implicated in slow inactivation gating, which is important for spike frequency adaptation in neural circuits. However, it remains an open question whether gating transitions in the selectivity filter region are also actuated by voltage sensors. Here, we examine conformational coupling between each of the four voltage sensors and the outer pore of a eukaryotic voltage-dependent sodium channel. The voltage sensors of these sodium channels are not structurally symmetric and exhibit functional specialization. To track the conformational rearrangements of individual voltage-sensing domains, we recorded domain-specific gating pore currents. Our data show that, of the four voltage sensors, only the domain IV voltage sensor is coupled to the conformation of the selectivity filter region of the sodium channel. Trapping the outer pore in a particular conformation with a high-affinity toxin or disulphide crossbridge impedes the return of this voltage sensor to its resting conformation. Our findings directly establish that, in addition to the canonical electromechanical coupling between voltage sensor and inner pore gates of a sodium channel, gating transitions in the selectivity filter region are also coupled to the movement of a voltage sensor. Furthermore, our results also imply that the voltage sensor of domain IV is unique in this linkage and in the ability to initiate slow inactivation in sodium channels.

Developing Fast Fluorescent Protein Voltage Sensors by Optimizing FRET Interactions.

Directory of Open Access Journals (Sweden)

Uhna Sung

Full Text Available FRET (Förster Resonance Energy Transfer-based protein voltage sensors can be useful for monitoring neuronal activity in vivo because the ratio of signals between the donor and acceptor pair reduces common sources of noise such as heart beat artifacts. We improved the performance of FRET based genetically encoded Fluorescent Protein (FP voltage sensors by optimizing the location of donor and acceptor FPs flanking the voltage sensitive domain of the Ciona intestinalis voltage sensitive phosphatase. First, we created 39 different "Nabi1" constructs by positioning the donor FP, UKG, at 8 different locations downstream of the voltage-sensing domain and the acceptor FP, mKO, at 6 positions upstream. Several of these combinations resulted in large voltage dependent signals and relatively fast kinetics. Nabi1 probes responded with signal size up to 11% ΔF/F for a 100 mV depolarization and fast response time constants both for signal activation (~2 ms and signal decay (~3 ms. We improved expression in neuronal cells by replacing the mKO and UKG FRET pair with Clover (donor FP and mRuby2 (acceptor FP to create Nabi2 probes. Nabi2 probes also had large signals and relatively fast time constants in HEK293 cells. In primary neuronal culture, a Nabi2 probe was able to differentiate individual action potentials at 45 Hz.

''SensArray'' voltage sensor analysis in an inductively coupled plasma

International Nuclear Information System (INIS)

Titus, M. J.; Hsu, C. C.; Graves, D. B.

2010-01-01

A commercially manufactured PlasmaVolt sensor wafer was studied in an inductively coupled plasma reactor in an effort to validate sensor measurements. A pure Ar plasma at various powers (25-420 W), for a range of pressures (10-80 mT), and bias voltages (0-250 V) was utilized. A numerical sheath simulation was simultaneously developed in order to interpret experimental results. It was found that PlasmaVolt sensor measurements are proportional to the rf-current through the sheath. Under conditions such that the sheath impedance is dominantly capacitive, sensor measurements follow a scaling law derived from the inhomogeneous sheath model of Lieberman and Lichtenberg, [Principles of Plasma Discharges and Materials Processing (Wiley, New York, 2005)]. Under these conditions, sensor measurements are proportional to the square root of the plasma density at the plasma-sheath interface, the one-fourth root of the electron temperature, and the one-fourth root of the rf bias voltage. When the sheath impedance becomes increasingly resistive, the sensor measurements deviate from the scaling law and tend to be directly proportional to the plasma density. The measurements and numerical sheath simulation demonstrate the scaling behavior as a function of changing sheath impedance for various plasma conditions.

Induction of divalent cation permeability by heterologous expression of a voltage sensor domain.

Science.gov (United States)

Arima, Hiroki; Tsutsui, Hidekazu; Sakamoto, Ayako; Yoshida, Manabu; Okamura, Yasushi

2018-01-06

The voltage sensor domain (VSD) is a protein domain that confers sensitivity to membrane potential in voltage-gated ion channels as well as the voltage-sensing phosphatase. Although VSDs have long been considered to function as regulatory units acting on adjacent effectors, recent studies have revealed the existence of direct ion permeation paths in some mutated VSDs and in the voltage-gated proton channel. In this study, we show that calcium currents are evoked upon membrane hyperpolarization in cells expressing a VSD derived from an ascidian voltage-gated ion channel superfamily. Unlike the previously reported omega-pore in the Shaker K + channel and rNav1.4, mutations are not required. From electrophysiological experiments in heterologous expression systems, we found that the conductance is directly mediated by the VSD itself and is carried by both monovalent and divalent cations. This is the first report of divalent cation permeation through a VSD-like structure. Copyright © 2018 Elsevier B.V. All rights reserved.

A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

Science.gov (United States)

Zhang, Tongzhi; Pang, Fufei; Liu, Huanhuan; Cheng, Jiajing; Lv, Longbao; Zhang, Xiaobei; Chen, Na; Wang, Tingyun

2016-01-01

We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD) of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad/(m⋅Pa). A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work. PMID:27916900

Ozone Sensor for Application in Medium Voltage Switchboard

Directory of Open Access Journals (Sweden)

Letizia De Maria

2009-01-01

Full Text Available The application of a new spectroscopic type fiber sensor for ozone detection in electrical components of Medium Voltage (MV network is evaluated. The sensor layout is based on the use of an optical retroreflector, to improve the detection sensitivity, and it was especially designed for detecting in situ rapid changes of ozone concentration. Preliminary tests were performed in a typical MV switchboard. Artificial defects simulated predischarge phenomena arising during real operating conditions. Results are discussed by a comparison with data simultaneously acquired with a standard partial discharge system.

The cooperative voltage sensor motion that gates a potassium channel.

Science.gov (United States)

Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

2005-01-01

The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close.

A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

Directory of Open Access Journals (Sweden)

Tongzhi Zhang

2016-11-01

Full Text Available We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad / ( m ⋅ Pa . A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work.

Voltage transients in thin-film InSb Hall sensor

Science.gov (United States)

Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

DEFF Research Database (Denmark)

Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

2017-01-01

We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... are consistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit...... voltage measurements on Cu2ZnSnS4 solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of...

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

Science.gov (United States)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2012-01-01

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

An H₂S Sensor Based on Electrochemistry for Chicken Coops.

Science.gov (United States)

Zeng, Lihua; He, Mei; Yu, Huihui; Li, Daoliang

2016-08-31

The recent modernization of the livestock industry lags behind the scale of the livestock industry, particularly in indoor environmental monitoring. In particular, the H₂S gas concentration in chicken coops affects the growth and reproductive capacity of the chickens and threatens their health. Therefore, the research and development of a low-cost, environmentally friendly sensor that can achieve on-line monitoring of H₂S gas has a notably important practical significance. This paper reports the design of an H₂S gas sensor, with selection of an electrochemical probe with high accuracy and wide measurement range using the relatively mature technology of electrochemical sensors. Although the probe of the sensor is the main factor that affects the sensor accuracy, the probe must be combined with a specifically designed signal condition circuit that can overcome the lack of an electrode to satisfy the requirements for the interconnection and matching between the output signal and the test instrument. Because the output current of the electrochemical electrode is small and likely to be disturbed by noise, we designed signal-conditioning modules. Through the signal-conditioning circuit, the output signal of the current electrode can be converted into a voltage and amplified. In addition, we designed a power control module because a bias voltage is necessary for the electrode. Finally, after the calibration experiment, the accurate concentration of H₂S gas can be measured. Based on the experimental analysis, the sensor shows good linearity and selectivity, comparatively high sensitivity, perfect stability and an extremely long operating life of up to two years.

Design, experiments and simulation of voltage transformers on the basis of a differential input D-dot sensor.

Science.gov (United States)

Wang, Jingang; Gao, Can; Yang, Jie

2014-07-17

Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

Optical fiber sensor of partial discharges in High Voltage DC experiments

Science.gov (United States)

Búa-Núñez, I.; Azcárraga-Ramos, C. G.; Posada-Román, J. E.; Garcia-Souto, J. A.

2014-05-01

A setup simulating High Voltage DC (HVDC) transformers barriers was developed to demonstrate the effectiveness of an optical fiber (OF) sensor in detecting partial discharges (PD) under these peculiar conditions. Different PD detection techniques were compared: electrical methods, and acoustic methods. Standard piezoelectric sensors (R15i-AST) and the above mentioned OF sensors were used for acoustic detection. The OF sensor was able to detect PD acoustically with a sensitivity better than the other detection methods. The multichannel instrumentation system was tested in real HVDC conditions with the aim of analyzing the behavior of the insulation (mineral oil/pressboard).

Voltage transients in thin-film InSb Hall sensor

Directory of Open Access Journals (Sweden)

Alexey Bardin

Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

The S4-S5 linker acts as a signal integrator for HERG K+ channel activation and deactivation gating.

Directory of Open Access Journals (Sweden)

Chai Ann Ng

Full Text Available Human ether-à-go-go-related gene (hERG K(+ channels have unusual gating kinetics. Characterised by slow activation/deactivation but rapid inactivation/recovery from inactivation, the unique gating kinetics underlie the central role hERG channels play in cardiac repolarisation. The slow activation and deactivation kinetics are regulated in part by the S4-S5 linker, which couples movement of the voltage sensor domain to opening of the activation gate at the distal end of the inner helix of the pore domain. It has also been suggested that cytosolic domains may interact with the S4-S5 linker to regulate activation and deactivation kinetics. Here, we show that the solution structure of a peptide corresponding to the S4-S5 linker of hERG contains an amphipathic helix. The effects of mutations at the majority of residues in the S4-S5 linker of hERG were consistent with the previously identified role in coupling voltage sensor movement to the activation gate. However, mutations to Ser543, Tyr545, Gly546 and Ala548 had more complex phenotypes indicating that these residues are involved in additional interactions. We propose a model in which the S4-S5 linker, in addition to coupling VSD movement to the activation gate, also contributes to interactions that stabilise the closed state and a separate set of interactions that stabilise the open state. The S4-S5 linker therefore acts as a signal integrator and plays a crucial role in the slow deactivation kinetics of the channel.

High-resolution orientation and depth of insertion of the voltage-sensing S4 helix of a potassium channel in lipid bilayers.

Science.gov (United States)

Doherty, Tim; Su, Yongchao; Hong, Mei

2010-08-27

The opening and closing of voltage-gated potassium (Kv) channels are controlled by several conserved Arg residues in the S4 helix of the voltage-sensing domain. The interaction of these positively charged Arg residues with the lipid membrane has been of intense interest for understanding how membrane proteins fold to allow charged residues to insert into lipid bilayers against free-energy barriers. Using solid-state NMR, we have now determined the orientation and insertion depth of the S4 peptide of the KvAP channel in lipid bilayers. Two-dimensional (15)N correlation experiments of macroscopically oriented S4 peptide in phospholipid bilayers revealed a tilt angle of 40 degrees and two possible rotation angles differing by 180 degrees around the helix axis. Remarkably, the tilt angle and one of the two rotation angles are identical to those of the S4 helix in the intact voltage-sensing domain, suggesting that interactions between the S4 segment and other helices of the voltage-sensing domain are not essential for the membrane topology of the S4 helix. (13)C-(31)P distances between the S4 backbone and the lipid (31)P indicate a approximately 9 A local thinning and 2 A average thinning of the DMPC (1,2-dimyristoyl-sn-glycero-3-phosphochloline)/DMPG (1,2-dimyristoyl-sn-glycero-3-phosphatidylglycerol) bilayer, consistent with neutron diffraction data. Moreover, a short distance of 4.6 A from the guanidinium C(zeta) of the second Arg to (31)P indicates the existence of guanidinium phosphate hydrogen bonding and salt bridges. These data suggest that the structure of the Kv gating helix is mainly determined by protein-lipid interactions instead of interhelical protein-protein interactions, and the S4 amino acid sequence encodes sufficient information for the membrane topology of this crucial gating helix. Copyright (c) 2010 Elsevier Ltd. All rights reserved.

Design, Experiments and Simulation of Voltage Transformers on the Basis of a Differential Input D-dot Sensor

Directory of Open Access Journals (Sweden)

Jingang Wang

2014-07-01

Full Text Available Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

Induction sensor for measuring the accelerating voltage in an iron-free induction accelerator

International Nuclear Information System (INIS)

Bol'nykh, N.S.; Il'in, Yu.M.; Kostyushok, A.A.; Suvorov, V.A.

1987-01-01

An inductive sensor is described for measuring the amplitude and form of the accelerating-voltage pulse in the storage coils in a radial iron-free linear induction accelerator. The sensor does not respond to interference from external fields and does not require adjustment after calibration

Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

Energy Technology Data Exchange (ETDEWEB)

Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

2014-03-24

Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

Voltage-sensing phosphatase: its molecular relationship with PTEN.

Science.gov (United States)

Okamura, Yasushi; Dixon, Jack E

2011-02-01

Voltage-sensing phosphoinositide phosphatase (VSP) contains voltage sensor and cytoplasmic phosphatase domains. A unique feature of this protein is that depolarization-induced motions of the voltage sensor activate PtdIns(3,4,5)P(3) and PtdIns(4,5)P(2) phosphatase activities. VSP exhibits remarkable structural similarities with PTEN, the phosphatase and tensin homolog deleted on chromosome 10. These similarities include the cytoplasmic phosphatase region, the phosphoinositide binding region, and the putative membrane interacting C2 domain.

An H2S Sensor Based on Electrochemistry for Chicken Coops

Science.gov (United States)

Zeng, Lihua; He, Mei; Yu, Huihui; Li, Daoliang

2016-01-01

The recent modernization of the livestock industry lags behind the scale of the livestock industry, particularly in indoor environmental monitoring. In particular, the H2S gas concentration in chicken coops affects the growth and reproductive capacity of the chickens and threatens their health. Therefore, the research and development of a low-cost, environmentally friendly sensor that can achieve on-line monitoring of H2S gas has a notably important practical significance. This paper reports the design of an H2S gas sensor, with selection of an electrochemical probe with high accuracy and wide measurement range using the relatively mature technology of electrochemical sensors. Although the probe of the sensor is the main factor that affects the sensor accuracy, the probe must be combined with a specifically designed signal condition circuit that can overcome the lack of an electrode to satisfy the requirements for the interconnection and matching between the output signal and the test instrument. Because the output current of the electrochemical electrode is small and likely to be disturbed by noise, we designed signal-conditioning modules. Through the signal-conditioning circuit, the output signal of the current electrode can be converted into a voltage and amplified. In addition, we designed a power control module because a bias voltage is necessary for the electrode. Finally, after the calibration experiment, the accurate concentration of H2S gas can be measured. Based on the experimental analysis, the sensor shows good linearity and selectivity, comparatively high sensitivity, perfect stability and an extremely long operating life of up to two years. PMID:27589757

Studies of alpha-helicity and intersegmental interactions in voltage-gated Na+ channels: S2D4.

Directory of Open Access Journals (Sweden)

Zhongming Ma

2009-11-01

Full Text Available Much data, including crystallographic, support structural models of sodium and potassium channels consisting of S1-S4 transmembrane segments (the "voltage-sensing domain" clustered around a central pore-forming region (S5-S6 segments and the intervening loop. Voltage gated sodium channels have four non-identical domains which differentiates them from the homotetrameric potassium channels that form the basis for current structural models. Since potassium and sodium channels also exhibit many different functional characteristics and the fourth domain (D4 of sodium channels differs in function from other domains (D1-D3, we have explored its structure in order to determine whether segments in D4 of sodium channels differ significantly from that determined for potassium channels. We have probed the secondary and tertiary structure and the role of the individual amino acid residues of the S2D4 of Na(v1.4 by employing cysteine-scanning mutagenesis (with tryptophan and glutamine substituted for native cysteine. A Fourier transform power spectrum of perturbations in free energy of steady-state inactivation gating (using midpoint potentials and slopes of Boltzmann equation fits of channel availability, h(infinity-V plots indicates a substantial amount of alpha-helical structure in S2D4 (peak at 106 degrees, alpha-Periodicity Index (alpha-PI of 3.10, This conclusion is supported by alpha-PI values of 3.28 and 2.84 for the perturbations in rate constants of entry into (beta and exit from (alpha fast inactivation at 0 mV for mutant channels relative to WT channels assuming a simple two-state model for transition from the open to inactivated state. The results of cysteine substitution at the two most sensitive sites of the S2D4 alpha-helix (N1382 and E1392C support the existence of electrostatic network interactions between S2 and other transmembrane segments within Na(v1.4D4 similar to but not identical to those proposed for K+ channels.

Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor

Energy Technology Data Exchange (ETDEWEB)

Yu Junting; Li Binqiao; Yu Pingping; Xu Jiangtao [School of Electronics Information Engineering, Tianjin University, Tianjin 300072 (China); Mou Cun, E-mail: xujiangtao@tju.edu.c [Logistics Management Office, Hebei University of Technology, Tianjin 300130 (China)

2010-09-15

Pixel image lag in a 4-T CMOS image sensor is analyzed and simulated in a two-dimensional model. Strategies of reducing image lag are discussed from transfer gate channel threshold voltage doping adjustment, PPD N-type doping dose/implant tilt adjustment and transfer gate operation voltage adjustment for signal electron transfer. With the computer analysis tool ISE-TCAD, simulation results show that minimum image lag can be obtained at a pinned photodiode n-type doping dose of 7.0 x 10{sup 12} cm{sup -2}, an implant tilt of -2{sup 0}, a transfer gate channel doping dose of 3.0 x 10{sup 12} cm{sup -2} and an operation voltage of 3.4 V. The conclusions of this theoretical analysis can be a guideline for pixel design to improve the performance of 4-T CMOS image sensors. (semiconductor devices)

Enzyme domain affects the movement of the voltage sensor in ascidian and zebrafish voltage-sensing phosphatases.

Science.gov (United States)

Hossain, Md Israil; Iwasaki, Hirohide; Okochi, Yoshifumi; Chahine, Mohamed; Higashijima, Shinichi; Nagayama, Kuniaki; Okamura, Yasushi

2008-06-27

The ascidian voltage-sensing phosphatase (Ci-VSP) consists of the voltage sensor domain (VSD) and a cytoplasmic phosphatase region that has significant homology to the phosphatase and tensin homolog deleted on chromosome TEN (PTEN). The phosphatase activity of Ci-VSP is modified by the conformational change of the VSD. In many proteins, two protein modules are bidirectionally coupled, but it is unknown whether the phosphatase domain could affect the movement of the VSD in VSP. We addressed this issue by whole-cell patch recording of gating currents from a teleost VSP (Dr-VSP) cloned from Danio rerio expressed in tsA201 cells. Replacement of a critical cysteine residue, in the phosphatase active center of Dr-VSP, by serine sharpened both ON- and OFF-gating currents. Similar changes were produced by treatment with phosphatase inhibitors, pervanadate and orthovanadate, that constitutively bind to cysteine in the active catalytic center of phosphatases. The distinct kinetics of gating currents dependent on enzyme activity were not because of altered phosphatidylinositol 4,5-bisphosphate levels, because the kinetics of gating current did not change by depletion of phosphatidylinositol 4,5-bisphosphate, as reported by coexpressed KCNQ2/3 channels. These results indicate that the movement of the VSD is influenced by the enzymatic state of the cytoplasmic domain, providing an important clue for understanding mechanisms of coupling between the VSD and its effector.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

CERN Document Server

Benoit, M.

2016-07-21

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Simple mechanical parameters identification of induction machine using voltage sensor only

International Nuclear Information System (INIS)

Horen, Yoram; Strajnikov, Pavel; Kuperman, Alon

2015-01-01

Highlights: • A simple low cost algorithm for induction motor mechanical parameters estimation is proposed. • Voltage sensing only is performed; speed sensor is not required. • The method is suitable for both wound rotor and squirrel cage motors. - Abstract: A simple low cost algorithm for induction motor mechanical parameters estimation without speed sensor is presented in this paper. Estimation is carried out by recording stator terminal voltage during natural braking and subsequent offline curve fitting. The algorithm allows accurately reconstructing mechanical time constant as well as loading torque speed dependency. Although the mathematical basis of the presented method is developed for wound rotor motors, it is shown to be suitable for squirrel cage motors as well. The algorithm is first tested by reconstruction of simulation model parameters and then by processing measurement results of several motors. Simulation and experimental results support the validity of the proposed algorithm

Local anesthetics disrupt energetic coupling between the voltage-sensing segments of a sodium channel.

Science.gov (United States)

Muroi, Yukiko; Chanda, Baron

2009-01-01

Local anesthetics block sodium channels in a state-dependent fashion, binding with higher affinity to open and/or inactivated states. Gating current measurements show that local anesthetics immobilize a fraction of the gating charge, suggesting that the movement of voltage sensors is modified when a local anesthetic binds to the pore of the sodium channel. Here, using voltage clamp fluorescence measurements, we provide a quantitative description of the effect of local anesthetics on the steady-state behavior of the voltage-sensing segments of a sodium channel. Lidocaine and QX-314 shifted the midpoints of the fluorescence-voltage (F-V) curves of S4 domain III in the hyperpolarizing direction by 57 and 65 mV, respectively. A single mutation in the S6 of domain IV (F1579A), a site critical for local anesthetic block, abolished the effect of QX-314 on the voltage sensor of domain III. Both local anesthetics modestly shifted the F-V relationships of S4 domain IV toward hyperpolarized potentials. In contrast, the F-V curve of the S4 domain I was shifted by 11 mV in the depolarizing direction upon QX-314 binding. These antagonistic effects of the local anesthetic indicate that the drug modifies the coupling between the voltage-sensing domains of the sodium channel. Our findings suggest a novel role of local anesthetics in modulating the gating apparatus of the sodium channel.

Optimal power and performance trade-offs for dynamic voltage scaling in power management based wireless sensor node

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Anuradha Pughat

2016-09-01

Full Text Available Dynamic voltage scaling contributes to a significant amount of power saving, especially in the energy constrained wireless sensor networks (WSNs. Existing dynamic voltage scaling techniques make the system slower and ignore the event miss rate. This results in degradation of the system performance when there is non-stationary workload at input. The overhead due to transition between voltage level and discrete voltage levels are also the limitations of available dynamic voltage scaling (DVS techniques at sensor node (SN. This paper proposes a workload dependent DVS based MSP430 controller model used for SN. An online gradient estimation technique has been used to optimize power and performance trade-offs. The analytical results are validated with the simulation results obtained using simulation tool “SimEvents” and compared with the available AT9OS8535 controller. Based on the stochastic workload, the controller's input voltage, operational frequency, utilization, and average wait time of events are obtained.

General Voltage Feedback Circuit Model in the Two-Dimensional Networked Resistive Sensor Array

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JianFeng Wu

2015-01-01

Full Text Available To analyze the feature of the two-dimensional networked resistive sensor array, we firstly proposed a general model of voltage feedback circuits (VFCs such as the voltage feedback non-scanned-electrode circuit, the voltage feedback non-scanned-sampling-electrode circuit, and the voltage feedback non-scanned-sampling-electrode circuit. By analyzing the general model, we then gave a general mathematical expression of the effective equivalent resistor of the element being tested in VFCs. Finally, we evaluated the features of VFCs with simulation and test experiment. The results show that the expression is applicable to analyze the VFCs’ performance of parameters such as the multiplexers’ switch resistors, the nonscanned elements, and array size.

PIEZOELECTRIC WAVEGUIDE SENSOR FOR MEASURING PULSE PRESSURE IN CLOSED LIQUID VOLUMES AT HIGH VOLTAGE ELECTRIC DISCHARGE

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V. G. Zhekul

2017-10-01

Full Text Available Purpose. Investigations of the characteristics of pressure waves presuppose the registration of the total profile of the pressure wave at a given point in space. For these purposes, various types of «pressure to the electrical signal» transmitters (sensors are used. Most of the common sensors are unsuitable for measuring the pulse pressure in a closed water volume at high hydrostatic pressures, in particular to study the effect of a powerful high-voltage pulse discharge on increasing the inflow of minerals and drinking water in wells. The purpose of the work was to develop antijamming piezoelectric waveguide sensor for measuring pulse pressure at a close distance from a high-voltage discharge channel in a closed volume of a liquid. Methodology. We have applied the calibration method as used as a secondary standard, the theory of electrical circuits. Results. We have selected the design and the circuit solution of the waveguide pressure sensor. We have developed a waveguide pulse-pressure sensor DTX-1 with a measuring loop. This sensor makes it possible to study the spectral characteristics of pressure waves of high-voltage pulse discharge in closed volumes of liquid at a hydrostatic pressure of up to 20 MPa and a temperature of up to 80 °C. The sensor can be used to study pressure waves with a maximum amplitude value of up to 150 MPa and duration of up to 80 µs. According to the results of the calibration, the sensitivity of the developed sensor DTX-1 with a measuring loop is 0.0346 V/MPa. Originality. We have further developed the theory of designing the waveguide piezoelectric pulse pressure sensors for measuring the pulse pressure at a close distance from a high-voltage discharge channel in a closed fluid volume by controlling the attenuation of the amplitude of the pressure signal. Practical value. We have developed, created, calibrated, used in scientific research waveguide pressure pulse sensors DTX-1. We propose sensors DTX-1 for sale

Fluorescence-tracking of activation gating in human ERG channels reveals rapid S4 movement and slow pore opening.

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Zeineb Es-Salah-Lamoureux

2010-05-01

Full Text Available hERG channels are physiologically important ion channels which mediate cardiac repolarization as a result of their unusual gating properties. These are very slow activation compared with other mammalian voltage-gated potassium channels, and extremely rapid inactivation. The mechanism of slow activation is not well understood and is investigated here using fluorescence as a direct measure of S4 movement and pore opening.Tetramethylrhodamine-5-maleimide (TMRM fluorescence at E519 has been used to track S4 voltage sensor movement, and channel opening and closing in hERG channels. Endogenous cysteines (C445 and C449 in the S1-S2 linker bound TMRM, which caused a 10 mV hyperpolarization of the V((1/2 of activation to -27.5+/-2.0 mV, and showed voltage-dependent fluorescence signals. Substitution of S1-S2 linker cysteines with valines allowed unobstructed recording of S3-S4 linker E519C and L520C emission signals. Depolarization of E519C channels caused rapid initial fluorescence quenching, fit with a double Boltzmann relationship, F-V(ON, with V((1/2 (,1 = -37.8+/-1.7 mV, and V((1/2 (,2 = 43.5+/-7.9 mV. The first phase, V((1/2 (,1, was approximately 20 mV negative to the conductance-voltage relationship measured from ionic tail currents (G-V((1/2 = -18.3+/-1.2 mV, and relatively unchanged in a non-inactivating E519C:S620T mutant (V((1/2 = -34.4+/-1.5 mV, suggesting the fast initial fluorescence quenching tracked S4 voltage sensor movement. The second phase of rapid quenching was absent in the S620T mutant. The E519C fluorescence upon repolarization (V((1/2 = -20.6+/-1.2, k = 11.4 mV and L520C quenching during depolarization (V((1/2 = -26.8+/-1.0, k = 13.3 mV matched the respective voltage dependencies of hERG ionic tails, and deactivation time constants from -40 to -110 mV, suggesting they detected pore-S4 rearrangements related to ionic current flow during pore opening and closing.THE DATA INDICATE: 1 that rapid environmental changes occur at the

Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

Energy Technology Data Exchange (ETDEWEB)

Wang, Tian-Shun; Chen, Jun-Kang [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China); Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Chen, Wei, E-mail: weichen@tsinghua.edu.cn [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Zhou, Xingxiang, E-mail: xizhou@ustc.edu.cn [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China)

2013-11-21

We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation.

Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

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Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

2018-04-18

Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

Optimal dynamic voltage scaling for wireless sensor nodes with real-time constraints

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Cassandras, Christos G.; Zhuang, Shixin

2005-11-01

Sensors are increasingly embedded in manufacturing systems and wirelessly networked to monitor and manage operations ranging from process and inventory control to tracking equipment and even post-manufacturing product monitoring. In building such sensor networks, a critical issue is the limited and hard to replenish energy in the devices involved. Dynamic voltage scaling is a technique that controls the operating voltage of a processor to provide desired performance while conserving energy and prolonging the overall network's lifetime. We consider such power-limited devices processing time-critical tasks which are non-preemptive, aperiodic and have uncertain arrival times. We treat voltage scaling as a dynamic optimization problem whose objective is to minimize energy consumption subject to hard or soft real-time execution constraints. In the case of hard constraints, we build on prior work (which engages a voltage scaling controller at task completion times) by developing an intra-task controller that acts at all arrival times of incoming tasks. We show that this optimization problem can be decomposed into two simpler ones whose solution leads to an algorithm that does not actually require solving any nonlinear programming problems. In the case of soft constraints, this decomposition must be partly relaxed, but it still leads to a scalable (linear in the number of tasks) algorithm. Simulation results are provided to illustrate performance improvements in systems with intra-task controllers compared to uncontrolled systems or those using inter-task control.

Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

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Santos-Sacchi, Joseph; Song, Lei

2016-06-07

In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate

High-fidelity optical reporting of neuronal electrical activity with an ultrafast fluorescent voltage sensor

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St-Pierre, François; Marshall, Jesse D; Yang, Ying; Gong, Yiyang; Schnitzer, Mark J; Lin, Michael Z

2015-01-01

Accurate optical reporting of electrical activity in genetically defined neuronal populations is a long-standing goal in neuroscience. Here we describe Accelerated Sensor of Action Potentials 1 (ASAP1), a novel voltage sensor design in which a circularly permuted green fluorescent protein is inserted within an extracellular loop of a voltage-sensing domain, rendering fluorescence responsive to membrane potential. ASAP1 demonstrates on- and off- kinetics of 2.1 and 2.0 ms, reliably detects single action potentials and subthreshold potential changes, and tracks trains of action potential waveforms up to 200 Hz in single trials. With a favorable combination of brightness, dynamic range, and speed, ASAP1 enables continuous monitoring of membrane potential in neurons at KHz frame rates using standard epifluorescence microscopy. PMID:24755780

High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

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Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-02-14

We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

Voltage-dependent gating in a "voltage sensor-less" ion channel.

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Harley T Kurata

2010-02-01

Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

International Nuclear Information System (INIS)

Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

2016-01-01

We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

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Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

2017-10-01

Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

Mutations in the voltage-sensing domain affect the alternative ion permeation pathway in the TRPM3 channel.

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Held, Katharina; Gruss, Fabian; Aloi, Vincenzo Davide; Janssens, Annelies; Ulens, Chris; Voets, Thomas; Vriens, Joris

2018-03-31

Mutagenesis at positively charged amino acids (arginines and lysines) (R1-R4) in the voltage-sensor domain (transmembrane segment (S) 4) of voltage-gated Na + , K + and Ca 2+ channels can lead to an alternative ion permeation pathway distinct from the central pore. Recently, a non-canonical ion permeation pathway was described in TRPM3, a member of the transient receptor potential (TRP) superfamily. The non-canonical pore exists in the native TRPM3 channel and can be activated by co-stimulation of the endogenous agonist pregnenolone sulphate and the antifungal drug clotrimazole or by stimulation of the synthetic agonist CIM0216. Alignment of the voltage sensor of Shaker K + channels with the entire TRPM3 sequence revealed the highest degree of similarity in the putative S4 region of TRPM3, and suggested that only one single gating charge arginine (R2) in the putative S4 region is conserved. Mutagenesis studies in the voltage-sensing domain of TRPM3 revealed several residues in the voltage sensor (S4) as well as in S1 and S3 that are crucial for the occurrence of the non-canonical inward currents. In conclusion, this study provides evidence for the involvement of the voltage-sensing domain of TRPM3 in the formation of an alternative ion permeation pathway. Transient receptor potential (TRP) channels are cationic channels involved in a broad array of functions, including homeostasis, motility and sensory functions. TRP channel subunits consist of six transmembrane segments (S1-S6), and form tetrameric channels with a central pore formed by the region encompassing S5 and S6. Recently, evidence was provided for the existence of an alternative ion permeation pathway in TRPM3, which allows large inward currents upon hyperpolarization independently of the central pore. However, very little knowledge is available concerning the localization of this alternative pathway in the native TRPM3 channel protein. Guided by sequence homology with Shaker K + channels, in which

Functional diversity of voltage-sensing phosphatases in two urodele amphibians.

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Mutua, Joshua; Jinno, Yuka; Sakata, Souhei; Okochi, Yoshifumi; Ueno, Shuichi; Tsutsui, Hidekazu; Kawai, Takafumi; Iwao, Yasuhiro; Okamura, Yasushi

2014-07-16

Voltage-sensing phosphatases (VSPs) share the molecular architecture of the voltage sensor domain (VSD) with voltage-gated ion channels and the phosphoinositide phosphatase region with the phosphatase and tensin homolog (PTEN), respectively. VSPs enzymatic activities are regulated by the motions of VSD upon depolarization. The physiological role of these proteins has remained elusive, and insights may be gained by investigating biological variations in different animal species. Urodele amphibians are vertebrates with potent activities of regeneration and also show diverse mechanisms of polyspermy prevention. We cloned cDNAs of VSPs from the testes of two urodeles; Hynobius nebulosus and Cynops pyrrhogaster, and compared their expression and voltage-dependent activation. Their molecular architecture is highly conserved in both Hynobius VSP (Hn-VSP) and Cynops VSP (Cp-VSP), including the positively-charged arginine residues in the S4 segment of the VSD and the enzymatic active site for substrate binding, yet the C-terminal C2 domain of Hn-VSP is significantly shorter than that of Cp-VSP and other VSP orthologs. RT-PCR analysis showed that gene expression pattern was distinct between two VSPs. The voltage sensor motions and voltage-dependent phosphatase activities were investigated electrophysiologically by expression in Xenopus oocytes. Both VSPs showed "sensing" currents, indicating that their voltage sensor domains are functional. The phosphatase activity of Cp-VSP was found to be voltage dependent, as shown by its ability to regulate the conductance of coexpressed GIRK2 channels, but Hn-VSP lacked such phosphatase activity due to the truncation of its C2 domain. © 2014 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of the American Physiological Society and The Physiological Society.

Wireless Sensor Network for Radiometric Detection and Assessment of Partial Discharge in High-Voltage Equipment

Science.gov (United States)

Upton, D. W.; Saeed, B. I.; Mather, P. J.; Lazaridis, P. I.; Vieira, M. F. Q.; Atkinson, R. C.; Tachtatzis, C.; Garcia, M. S.; Judd, M. D.; Glover, I. A.

2018-03-01

Monitoring of partial discharge (PD) activity within high-voltage electrical environments is increasingly used for the assessment of insulation condition. Traditional measurement techniques employ technologies that either require off-line installation or have high power consumption and are hence costly. A wireless sensor network is proposed that utilizes only received signal strength to locate areas of PD activity within a high-voltage electricity substation. The network comprises low-power and low-cost radiometric sensor nodes which receive the radiation propagated from a source of PD. Results are reported from several empirical tests performed within a large indoor environment and a substation environment using a network of nine sensor nodes. A portable PD source emulator was placed at multiple locations within the network. Signal strength measured by the nodes is reported via WirelessHART to a data collection hub where it is processed using a location algorithm. The results obtained place the measured location within 2 m of the actual source location.

Mapping the interaction site for the tarantula toxin hainantoxin-IV (β-TRTX-Hn2a) in the voltage sensor module of domain II of voltage-gated sodium channels.

Science.gov (United States)

Cai, Tianfu; Luo, Ji; Meng, Er; Ding, Jiuping; Liang, Songping; Wang, Sheng; Liu, Zhonghua

2015-06-01

Peptide toxins often have pharmacological applications and are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a group of potential VGSC inhibitors have been reported from tarantula venoms, little is known about the mechanism of their interaction with VGSCs. In this study, we showed that hainantoxin-IV (β-TRTX-Hn2a, HNTX-IV in brief), a 35-residue peptide from Ornithoctonus hainana venom, preferentially inhibited rNav1.2, rNav1.3 and hNav1.7 compared with rNav1.4 and hNav1.5. hNav1.7 was the most sensitive to HNTX-IV (IC50∼21nM). In contrast to many other tarantula toxins that affect VGSCs, HNTX-IV at subsaturating concentrations did not alter activation and inactivation kinetics in the physiological range of voltages, while very large depolarization above +70mV could partially activate toxin-bound hNav1.7 channel, indicating that HNTX-IV acts as a gating modifier rather than a pore blocker. Site-directed mutagenesis indicated that the toxin bound to site 4, which was located on the extracellular S3-S4 linker of hNav1.7 domain II. Mutants E753Q, D816N and E818Q of hNav1.7 decreased toxin affinity for hNav1.7 by 2.0-, 3.3- and 130-fold, respectively. In silico docking indicated that a three-toed claw substructure formed by residues with close contacts in the interface between HNTX-IV and hNav1.7 domain II stabilized the toxin-channel complex, impeding movement of the domain II voltage sensor and inhibiting hNav1.7 activation. Our data provide structural details for structure-based drug design and a useful template for the design of highly selective inhibitors of a specific subtype of VGSCs. Copyright © 2014 Elsevier Inc. All rights reserved.

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

Science.gov (United States)

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-07-05

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid

Science.gov (United States)

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-01-01

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane. PMID:27330112

The tarantula toxins ProTx-II and huwentoxin-IV differentially interact with human Nav1.7 voltage sensors to inhibit channel activation and inactivation.

Science.gov (United States)

Xiao, Yucheng; Blumenthal, Kenneth; Jackson, James O; Liang, Songping; Cummins, Theodore R

2010-12-01

The voltage-gated sodium channel Na(v)1.7 plays a crucial role in pain, and drugs that inhibit hNa(v)1.7 may have tremendous therapeutic potential. ProTx-II and huwentoxin-IV (HWTX-IV), cystine knot peptides from tarantula venoms, preferentially block hNa(v)1.7. Understanding the interactions of these toxins with sodium channels could aid the development of novel pain therapeutics. Whereas both ProTx-II and HWTX-IV have been proposed to preferentially block hNa(v)1.7 activation by trapping the domain II voltage-sensor in the resting configuration, we show that specific residues in the voltage-sensor paddle of domain II play substantially different roles in determining the affinities of these toxins to hNa(v)1.7. The mutation E818C increases ProTx-II's and HWTX-IV's IC(50) for block of hNa(v)1.7 currents by 4- and 400-fold, respectively. In contrast, the mutation F813G decreases ProTx-II affinity by 9-fold but has no effect on HWTX-IV affinity. It is noteworthy that we also show that ProTx-II, but not HWTX-IV, preferentially interacts with hNa(v)1.7 to impede fast inactivation by trapping the domain IV voltage-sensor in the resting configuration. Mutations E1589Q and T1590K in domain IV each decreased ProTx-II's IC(50) for impairment of fast inactivation by ~6-fold. In contrast mutations D1586A and F1592A in domain-IV increased ProTx-II's IC(50) for impairment of fast inactivation by ~4-fold. Our results show that whereas ProTx-II and HWTX-IV binding determinants on domain-II may overlap, domain II plays a much more crucial role for HWTX-IV, and contrary to what has been proposed to be a guiding principle of sodium channel pharmacology, molecules do not have to exclusively target the domain IV voltage-sensor to influence sodium channel inactivation.

Differentiation of DctA and DcuS function in the DctA/DcuS sensor complex of Escherichia coli: function of DctA as an activity switch and of DcuS as the C4-dicarboxylate sensor.

Science.gov (United States)

Steinmetz, Philipp Aloysius; Wörner, Sebastian; Unden, Gottfried

2014-10-01

The C4-dicarboxylate responsiveness of the sensor kinase DcuS is only provided in concert with C4-dicarboxylate transporters DctA or DcuB. The individual roles of DctA and DcuS for the function of the DctA/DcuS sensor complex were analysed. (i) Variant DctA(S380D) in the C4-dicarboxylate site of DctA conferred C4-dicarboxylate sensitivity to DcuS in the DctA/DcuS complex, but was deficient for transport and for growth on C4-dicarboxylates. Consequently transport activity of DctA is not required for its function in the sensor complex. (ii) Effectors like fumarate induced expression of DctA/DcuS-dependent reporter genes (dcuB-lacZ) and served as substrates of DctA, whereas citrate served only as an inducer of dcuB-lacZ without affecting DctA function. (iii) Induction of dcuB-lacZ by fumarate required 33-fold higher concentrations than for transport by DctA (Km  = 30 μM), demonstrating the existence of different fumarate sites for both processes. (iv) In titration experiments with increasing dctA expression levels, the effect of DctA on the C4-dicarboxylate sensitivity of DcuS was concentration dependent. The data uniformly show that C4-dicarboxylate sensing by DctA/DcuS resides in DcuS, and that DctA serves as an activity switch. Shifting of DcuS from the constitutive ON to the C4-dicarboxylate responsive state, required presence of DctA but not transport by DctA. © 2014 John Wiley & Sons Ltd.

Voltage-Dependent Gating: Novel Insights from KCNQ1 Channels

Science.gov (United States)

Cui, Jianmin

2016-01-01

Gating of voltage-dependent cation channels involves three general molecular processes: voltage sensor activation, sensor-pore coupling, and pore opening. KCNQ1 is a voltage-gated potassium (Kv) channel whose distinctive properties have provided novel insights on fundamental principles of voltage-dependent gating. 1) Similar to other Kv channels, KCNQ1 voltage sensor activation undergoes two resolvable steps; but, unique to KCNQ1, the pore opens at both the intermediate and activated state of voltage sensor activation. The voltage sensor-pore coupling differs in the intermediate-open and the activated-open states, resulting in changes of open pore properties during voltage sensor activation. 2) The voltage sensor-pore coupling and pore opening require the membrane lipid PIP2 and intracellular ATP, respectively, as cofactors, thus voltage-dependent gating is dependent on multiple stimuli, including the binding of intracellular signaling molecules. These mechanisms underlie the extraordinary KCNE1 subunit modification of the KCNQ1 channel and have significant physiological implications. PMID:26745405

3' Phosphatase activity toward phosphatidylinositol 3,4-bisphosphate [PI(3,4)P2] by voltage-sensing phosphatase (VSP).

Science.gov (United States)

Kurokawa, Tatsuki; Takasuga, Shunsuke; Sakata, Souhei; Yamaguchi, Shinji; Horie, Shigeo; Homma, Koichi J; Sasaki, Takehiko; Okamura, Yasushi

2012-06-19

Voltage-sensing phosphatases (VSPs) consist of a voltage-sensor domain and a cytoplasmic region with remarkable sequence similarity to phosphatase and tensin homolog deleted on chromosome 10 (PTEN), a tumor suppressor phosphatase. VSPs dephosphorylate the 5' position of the inositol ring of both phosphatidylinositol 3,4,5-trisphosphate [PI(3,4,5)P(3)] and phosphatidylinositol 4,5-bisphosphate [PI(4,5)P(2)] upon voltage depolarization. However, it is unclear whether VSPs also have 3' phosphatase activity. To gain insights into this question, we performed in vitro assays of phosphatase activities of Ciona intestinalis VSP (Ci-VSP) and transmembrane phosphatase with tensin homology (TPTE) and PTEN homologous inositol lipid phosphatase (TPIP; one human ortholog of VSP) with radiolabeled PI(3,4,5)P(3). TLC assay showed that the 3' phosphate of PI(3,4,5)P(3) was not dephosphorylated, whereas that of phosphatidylinositol 3,4-bisphosphate [PI(3,4)P(2)] was removed by VSPs. Monitoring of PI(3,4)P(2) levels with the pleckstrin homology (PH) domain from tandem PH domain-containing protein (TAPP1) fused with GFP (PH(TAPP1)-GFP) by confocal microscopy in amphibian oocytes showed an increase of fluorescence intensity during depolarization to 0 mV, consistent with 5' phosphatase activity of VSP toward PI(3,4,5)P(3). However, depolarization to 60 mV showed a transient increase of GFP fluorescence followed by a decrease, indicating that, after PI(3,4,5)P(3) is dephosphorylated at the 5' position, PI(3,4)P(2) is then dephosphorylated at the 3' position. These results suggest that substrate specificity of the VSP changes with membrane potential.

Ultra-low power sensor for autonomous non-invasive voltage measurement in IoT solutions for energy efficiency

Science.gov (United States)

Villani, Clemente; Balsamo, Domenico; Brunelli, Davide; Benini, Luca

2015-05-01

Monitoring current and voltage waveforms is fundamental to assess the power consumption of a system and to improve its energy efficiency. In this paper we present a smart meter for power consumption which does not need any electrical contact with the load or its conductors, and which can measure both current and voltage. Power metering becomes easier and safer and it is also self-sustainable because an energy harvesting module based on inductive coupling powers the entire device from the output of the current sensor. A low cost 32-bit wireless CPU architecture is used for data filtering and processing, while a wireless transceiver sends data via the IEEE 802.15.4 standard. We describe in detail the innovative contact-less voltage measurement system, which is based on capacitive coupling and on an algorithm that exploits two pre-processing channels. The system self-calibrates to perform precise measurements regardless the cable type. Experimental results demonstrate accuracy in comparison with commercial high-cost instruments, showing negligible deviations.

Temperature- and supply voltage-independent time references for wireless sensor networks

CERN Document Server

De Smedt, Valentijn; Dehaene, Wim

2015-01-01

This book investigates the possible circuit solutions to overcome the temperature- and supply voltage-sensitivity of fully-integrated time references for ultra-low-power communication in wireless sensor networks. The authors provide an elaborate theoretical introduction and literature study to enable full understanding of the design challenges and shortcomings of current oscillator implementations.  Furthermore, a closer look to the short-term as well as the long-term frequency stability of integrated oscillators is taken. Next, a design strategy is developed and applied to 5 different oscillator topologies and 1 sensor interface.All 6 implementations are subject to an elaborate study of frequency stability, phase noise, and power consumption. In the final chapter all blocks are compared to the state of the art. The main goals of this book are: • to provide a comprehensive overview of timing issues and solutions in wireless sensor networks; • to gain understanding of all underlying mechanisms by starti...

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

Science.gov (United States)

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-11-17

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

IEEE-802.15.4-based low-power body sensor node with RF energy harvester.

Science.gov (United States)

Tran, Thang Viet; Chung, Wan-Young

2014-01-01

This paper proposes the design and implementation of a low-voltage and low-power body sensor node based on the IEEE 802.15.4 standard to collect electrocardiography (ECG) and photoplethysmography (PPG) signals. To achieve compact size, low supply voltage, and low power consumption, the proposed platform is integrated into a ZigBee mote, which contains a DC-DC booster, a PPG sensor interface module, and an ECG front-end circuit that has ultra-low current consumption. The input voltage of the proposed node is very low and has a wide range, from 0.65 V to 3.3 V. An RF energy harvester is also designed to charge the battery during the working mode or standby mode of the node. The power consumption of the proposed node reaches 14 mW in working mode to prolong the battery lifetime. The software is supported by the nesC language under the TinyOS environment, which enables the proposed node to be easily configured to function as an individual health monitoring node or a node in a wireless body sensor network (BSN). The proposed node is used to set up a wireless BSN that can simultaneously collect ECG and PPG signals and monitor the results on the personal computer.

Large conductance Ca2+-activated K+ (BK channel: Activation by Ca2+ and voltage

Directory of Open Access Journals (Sweden)

RAMÓN LATORRE

2006-01-01

Full Text Available Large conductance Ca2+-activated K+ (BK channels belong to the S4 superfamily of K+ channels that include voltage-dependent K+ (Kv channels characterized by having six (S1-S6 transmembrane domains and a positively charged S4 domain. As Kv channels, BK channels contain a S4 domain, but they have an extra (S0 transmembrane domain that leads to an external NH2-terminus. The BK channel is activated by internal Ca2+, and using chimeric channels and mutagenesis, three distinct Ca2+-dependent regulatory mechanisms with different divalent cation selectivity have been identified in its large COOH-terminus. Two of these putative Ca2+-binding domains activate the BK channel when cytoplasmic Ca2+ reaches micromolar concentrations, and a low Ca2+ affinity mechanism may be involved in the physiological regulation by Mg2+. The presence in the BK channel of multiple Ca2+-binding sites explains the huge Ca2+ concentration range (0.1 μM-100 μM in which the divalent cation influences channel gating. BK channels are also voltage-dependent, and all the experimental evidence points toward the S4 domain as the domain in charge of sensing the voltage. Calcium can open BK channels when all the voltage sensors are in their resting configuration, and voltage is able to activate channels in the complete absence of Ca2+. Therefore, Ca2+ and voltage act independently to enhance channel opening, and this behavior can be explained using a two-tiered allosteric gating mechanism.

CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles

CERN Document Server

Guilloux, F.; Degerli, Y.; Elhosni, M.; Guyot, C.; Hemperek, T.; Lachkar, M.; Meyer, JP.; Ouraou, A.; Schwemling, P.; Vandenbroucke, M.

2018-01-01

The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC.

Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

Science.gov (United States)

Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

2018-04-01

In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

Low-noise Magnetic Sensors

KAUST Repository

Kosel, Jü rgen; Sun, Jian

2014-01-01

Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Low-noise Magnetic Sensors

KAUST Repository

Kosel, Jurgen

2014-03-27

Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Mechanistic Basis for Type 2 Long QT Syndrome Caused by KCNH2 Mutations that Disrupt Conserved Arginine Residue in the Voltage Sensor

Science.gov (United States)

McBride, Christie M.; Smith, Ashley M.; Smith, Jennifer L.; Reloj, Allison R.; Velasco, Ellyn J.; Powell, Jonathan; Elayi, Claude S.; Bartos, Daniel C.; Burgess, Don E.

2013-01-01

KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (IKr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing IKr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (IKv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients’ genotypes) mostly corrected the changes in IKv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing IKr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease IKr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient. PMID:23546015

A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

Science.gov (United States)

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

Science.gov (United States)

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

Directory of Open Access Journals (Sweden)

Chih-Ping Chang

2011-01-01

Full Text Available In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS. These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

Domain-to-domain coupling in voltage-sensing phosphatase.

Science.gov (United States)

Sakata, Souhei; Matsuda, Makoto; Kawanabe, Akira; Okamura, Yasushi

2017-01-01

Voltage-sensing phosphatase (VSP) consists of a transmembrane voltage sensor and a cytoplasmic enzyme region. The enzyme region contains the phosphatase and C2 domains, is structurally similar to the tumor suppressor phosphatase PTEN, and catalyzes the dephosphorylation of phosphoinositides. The transmembrane voltage sensor is connected to the phosphatase through a short linker region, and phosphatase activity is induced upon membrane depolarization. Although the detailed molecular characteristics of the voltage sensor domain and the enzyme region have been revealed, little is known how these two regions are coupled. In addition, it is important to know whether mechanism for coupling between the voltage sensor domain and downstream effector function is shared among other voltage sensor domain-containing proteins. Recent studies in which specific amino acid sites were genetically labeled using a fluorescent unnatural amino acid have enabled detection of the local structural changes in the cytoplasmic region of Ciona intestinalis VSP that occur with a change in membrane potential. The results of those studies provide novel insight into how the enzyme activity of the cytoplasmic region of VSP is regulated by the voltage sensor domain.

High-voltage CMOS detectors

International Nuclear Information System (INIS)

Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

2016-01-01

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

High-voltage CMOS detectors

Energy Technology Data Exchange (ETDEWEB)

Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

2016-07-11

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

Science.gov (United States)

Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

2012-06-06

Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Tuning the hysteresis voltage in 2D multilayer MoS{sub 2} FETs

Energy Technology Data Exchange (ETDEWEB)

Jiang, Jie, E-mail: jiangjie@csu.edu.cn; Zheng, Zhouming; Guo, Junjie

2016-10-01

The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS{sub 2} transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS{sub 2} FET. This simple method for tuning the hysteresis voltage of MoS{sub 2} FET can make a significant step toward 2D nanoelectronic device applications.

Fiber-optic voltage measuring system

Science.gov (United States)

Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

1993-09-01

A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

Molecular mechanism of voltage sensing in voltage-gated proton channels

Science.gov (United States)

Rebolledo, Santiago; Perez, Marta E.

2013-01-01

Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

Modular chemiresistive sensor

Energy Technology Data Exchange (ETDEWEB)

Alam, Maksudul M.; Sampathkumaran, Uma

2018-02-20

The present invention relates to a modular chemiresistive sensor. In particular, a modular chemiresistive sensor for hypergolic fuel and oxidizer leak detection, carbon dioxide monitoring and detection of disease biomarkers. The sensor preferably has two gold or platinum electrodes mounted on a silicon substrate where the electrodes are connected to a power source and are separated by a gap of 0.5 to 4.0 .mu.M. A polymer nanowire or carbon nanotube spans the gap between the electrodes and connects the electrodes electrically. The electrodes are further connected to a circuit board having a processor and data storage, where the processor can measure current and voltage values between the electrodes and compare the current and voltage values with current and voltage values stored in the data storage and assigned to particular concentrations of a pre-determined substance such as those listed above or a variety of other substances.

Sensors 4.0 – smart sensors and measurement technology enable Industry 4.0

Directory of Open Access Journals (Sweden)

A. Schütze

2018-05-01

Full Text Available Industrie 4.0 or the Industrial Internet of Things (IIoT are two terms for the current (revolution seen in industrial automation and control. Everything is getting smarter and data generated at all levels of the production process are used to improve product quality, flexibility, and productivity. This would not be possible without smart sensors, which generate the data and allow further functionality from self-monitoring and self-configuration to condition monitoring of complex processes. In analogy to Industry 4.0, the development of sensors has undergone distinctive stages culminating in today's smart sensors or Sensor 4.0. This paper briefly reviews the development of sensor technology over the last 2 centuries, highlights some of the potential that can be achieved with smart sensors and data evaluation, and discusses success requirements for future developments. In addition to magnetic sensor technologies which allow self-test and self-calibration and can contribute to many applications due to their wide spectrum of measured quantities, the paper discusses condition monitoring as a primary paradigm for introducing smart sensors and data analysis in manufacturing processes based on two projects performed in our group.

Applications of passive remote surface acoustic wave sensors in high-voltage systems; Einsatz von passiven funkabfragbaren Oberflaechenwellensensoren in der elektrischen Energietechnik

Energy Technology Data Exchange (ETDEWEB)

Teminova, R

2007-06-29

Passive remote Surface Acoustic Wave (SAW) sensors have been applied e.g. as temperature, pressure or torque sensors. Their important advantages over standard methods are their passive operating principle, which allows operation without any power supply, as well as the wireless high-frequency signal transmission over distances up to about 10..15 m even through (non metallic) housings. These properties of SAW sensors particularly qualify them for applications in high voltage operational equipment. First experience was gained in a long time field test of surge arrester monitoring based on SAW temperature sensors in a German high-voltage substation. Now, this system has been further developed at Darmstadt University of Technology for other applications, the first of them being an overhead line (OHL) conductor temperature measurement, the second one a temperature monitoring system for of high-voltage disconnectors. After designing and building the sensors, extensive laboratory tests were carried out applying high-voltage, high-current and thermal stress in order to approve the suitability for the intended application. All these tests confirmed the assumption that SAW sensors, due to their passive working principle, are not affected at all by any kind of electrical, magnetic or thermal stress that may occur during service. The complete temperature sensor consists of three parts: a sensor chip, an antenna which receives and transmits the signal from and to the radar unit and a body for installation and for protection against environmental impact. One must find a good compromise between optimizing of thermal, dielectric and high-frequency characteristics and at the same time taking into consideration a simple installation. These requirements on the SAW sensors turned out to be difficult to coordinate. To achieve a high measuring precision is especially difficult. First, a new sensor for OHL application was developed. The OHL conductor temperature sensor had been optimized

Mechanistic basis for type 2 long QT syndrome caused by KCNH2 mutations that disrupt conserved arginine residues in the voltage sensor.

Science.gov (United States)

McBride, Christie M; Smith, Ashley M; Smith, Jennifer L; Reloj, Allison R; Velasco, Ellyn J; Powell, Jonathan; Elayi, Claude S; Bartos, Daniel C; Burgess, Don E; Delisle, Brian P

2013-05-01

KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (I Kr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing I Kr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (I Kv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients' genotypes) mostly corrected the changes in I Kv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing I Kr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease I Kr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient.

Functional interactions at the interface between voltage-sensing and pore domains in the Shaker K(v) channel.

Science.gov (United States)

Soler-Llavina, Gilberto J; Chang, Tsg-Hui; Swartz, Kenton J

2006-11-22

Voltage-activated potassium (K(v)) channels contain a central pore domain that is partially surrounded by four voltage-sensing domains. Recent X-ray structures suggest that the two domains lack extensive protein-protein contacts within presumed transmembrane regions, but whether this is the case for functional channels embedded in lipid membranes remains to be tested. We investigated domain interactions in the Shaker K(v) channel by systematically mutating the pore domain and assessing tolerance by examining channel maturation, S4 gating charge movement, and channel opening. When mapped onto the X-ray structure of the K(v)1.2 channel the large number of permissive mutations support the notion of relatively independent domains, consistent with crystallographic studies. Inspection of the maps also identifies portions of the interface where residues are sensitive to mutation, an external cluster where mutations hinder voltage sensor activation, and an internal cluster where domain interactions between S4 and S5 helices from adjacent subunits appear crucial for the concerted opening transition.

Impacts of Voltage Control Methods on Distribution Circuit’s Photovoltaic (PV Integration Limits

Directory of Open Access Journals (Sweden)

Anamika Dubey

2017-10-01

Full Text Available The widespread integration of photovoltaic (PV units may result in a number of operational issues for the utility distribution system. The advances in smart-grid technologies with better communication and control capabilities may help to mitigate these challenges. The objective of this paper is to evaluate multiple voltage control methods and compare their effectiveness in mitigating the impacts of high levels of PV penetrations on distribution system voltages. A Monte Carlo based stochastic analysis framework is used to evaluate the impacts of PV integration, with and without voltage control. Both snapshot power flow and time-series analysis are conducted for the feeder with varying levels of PV penetrations. The methods are compared for their impacts on (1 the feeder’s PV hosting capacity; (2 the number of voltage violations and the magnitude of the largest bus voltage; (3 the net reactive power demand from the substation; and (4 the number of switching operations of feeder’s legacy voltage support devices i.e., capacitor banks and load tap changers (LTCs. The simulation results show that voltage control help in mitigating overvoltage concerns and increasing the feeder’s hosting capacity. Although, the legacy control solves the voltage concerns for primary feeders, a smart inverter control is required to mitigate both primary and secondary feeder voltage regulation issues. The smart inverter control, however, increases the feeder’s reactive power demand and the number of LTC and capacitor switching operations. For the 34.5-kV test circuit, it is observed that the reactive power demand increases from 0 to 6.8 MVAR on enabling Volt-VAR control for PV inverters. The total number of capacitor and LTC operations over a 1-year period also increases from 455 operations to 1991 operations with Volt-VAR control mode. It is also demonstrated that by simply changing the control mode of capacitor banks, a significant reduction in the unnecessary

Wireless Power Supply via Coupled Magnetic Resonance for on-line Monitoring Wireless Sensor of High-voltage Electrical Equipment

DEFF Research Database (Denmark)

Xingkui, Mao; Qisheng, Huang; Yudi, Xiao

2016-01-01

On-line monitoring of high-voltage electrical equipment (HV-EE) aiming to detect faults effectively has become crucial to avoid serious accidents. Moreover, highly reliable power supplies are the key component for the wireless sensors equipped in such on-line monitoring systems. Therefore......, in this paper, the wireless power supply via coupled magnetic resonance (MR-WPS) is proposed for powering the wireless sensor and the associated wireless sensor solution is also proposed. The key specifications of the MR-WPS working in switchgear cabinet with a harsh operation environment are analyzed...... power is able to be delivered to the wireless sensor through the designed MR-WPS, and therefore the theoretical analysis and design is verified....

Dual Regulation of Voltage-Sensitive Ion Channels by PIP2

Directory of Open Access Journals (Sweden)

Aldo A Rodríguez Menchaca

2012-09-01

Full Text Available Over the past 16 years, there has been an impressive number of ion channels shown to be sensitive to the major phosphoinositide in the plasma membrane, phosphatidilinositol 4,5-bisphosphate (PIP2. Among them are voltage-gated channels, which are crucial for both neuronal and cardiac excitability. Voltage-gated calcium (Cav channels were shown to be regulated bidirectionally by PIP2. On one hand, PIP2 stabilized their activity by reducing current rundown but on the other hand it produced a voltage-dependent inhibition by shifting the activation curve to more positive voltages. For voltage-gated potassium (Kv channels PIP2 was first shown to prevent N-type inactivation. Careful examination of the effects of PIP2 on the activation mechanism of Kv1.2 has shown a similar bidirectional regulation as in the Cav channels. The two effects could be distinguished kinetically, in terms of their sensitivities to PIP2 and by distinct molecular determinants. The rightward shift of the Kv1.2 voltage dependence implicated basic residues in the S4-S5 linker and was consistent with stabilization of the inactive state of the voltage sensor. A third type of a voltage-gated ion channel modulated by PIP2 is the hyperpolarization-activated cyclic nucleotide-gated (HCN channel. PIP2 has been shown to enhance the opening of HCN channels by shifting their voltage-dependent activation toward depolarized potentials. The sea urchin HCN channel, SpIH, showed again a PIP2-mediated bidirectional effect but in reverse order than the depolarization-activated Cav and Kv channels: a voltage-dependent potentiation, like the mammalian HCN channels, but also an inhibition of the cGMP-induced current activation. Just like the Kv1.2 channels, distinct molecular determinants underlied the PIP2 dual effects on SpIH channels. The dual regulation of these very different ion channels, all of which are voltage dependent, points to conserved mechanisms of regulation of these channels by PIP2.

Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

International Nuclear Information System (INIS)

Wang, Tian-Shun; Chen, Jun-Kang; Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She; Chen, Wei; Zhou, Xingxiang

2013-01-01

We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation

NMR structural and dynamical investigation of the isolated voltage-sensing domain of the potassium channel KvAP: implications for voltage gating.

Science.gov (United States)

Shenkarev, Zakhar O; Paramonov, Alexander S; Lyukmanova, Ekaterina N; Shingarova, Lyudmila N; Yakimov, Sergei A; Dubinnyi, Maxim A; Chupin, Vladimir V; Kirpichnikov, Mikhail P; Blommers, Marcel J J; Arseniev, Alexander S

2010-04-28

The structure and dynamics of the isolated voltage-sensing domain (VSD) of the archaeal potassium channel KvAP was studied by high-resolution NMR. The almost complete backbone resonance assignment and partial side-chain assignment of the (2)H,(13)C,(15)N-labeled VSD were obtained for the protein domain solubilized in DPC/LDAO (2:1) mixed micelles. Secondary and tertiary structures of the VSD were characterized using secondary chemical shifts and NOE contacts. These data indicate that the spatial structure of the VSD solubilized in micelles corresponds to the structure of the domain in an open state of the channel. NOE contacts and secondary chemical shifts of amide protons indicate the presence of tightly bound water molecule as well as hydrogen bond formation involving an interhelical salt bridge (Asp62-R133) that stabilizes the overall structure of the domain. The backbone dynamics of the VSD was studied using (15)N relaxation measurements. The loop regions S1-S2 and S2-S3 were found mobile, while the S3-S4 loop (voltage-sensor paddle) was found stable at the ps-ns time scale. The moieties of S1, S2, S3, and S4 helices sharing interhelical contacts (at the level of the Asp62-R133 salt bridge) were observed in conformational exchange on the micros-ms time scale. Similar exchange-induced broadening of characteristic resonances was observed for the VSD solubilized in the membrane of lipid-protein nanodiscs composed of DMPC, DMPG, and POPC/DOPG lipids. Apparently, the observed interhelical motions represent an inherent property of the VSD of the KvAP channel and can play an important role in the voltage gating.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

Science.gov (United States)

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Mapping of Residues Forming the Voltage Sensor of the Voltage-Dependent Anion-Selective Channel

Science.gov (United States)

Thomas, Lorie; Blachly-Dyson, Elizabeth; Colombini, Marco; Forte, Michael

1993-06-01

Voltage-gated ion-channel proteins contain "voltage-sensing" domains that drive the conformational transitions between open and closed states in response to changes in transmembrane voltage. We have used site-directed mutagenesis to identify residues affecting the voltage sensitivity of a mitochondrial channel, the voltage-dependent anion-selective channel (VDAC). Although charge changes at many sites had no effect, at other sites substitutions that increased positive charge also increased the steepness of voltage dependance and substitutions that decreased positive charge decreased voltage dependance by an appropriate amount. In contrast to the plasma membrane K^+ and Na^+ channels, these residues are distributed over large parts of the VDAC protein. These results have been used to define the conformational transitions that accompany voltage gating of an ion channel. This gating mechanism requires the movement of large portions of the VDAC protein through the membrane.

An Improved Targeted cAMP Sensor to Study the Regulation of Adenylyl Cyclase 8 by Ca2+ Entry through Voltage-Gated Channels

Science.gov (United States)

Everett, Katy L.; Cooper, Dermot M. F.

2013-01-01

Here we describe an improved sensor with reduced pH sensitivity tethered to adenylyl cyclase (AC) 8. The sensor was used to study cAMP dynamics in the AC8 microdomain of MIN6 cells, a pancreatic β-cell line. In these cells, AC8 was activated by Ca2+ entry through L-type voltage-gated channels following depolarisation. This activation could be reconstituted in HEK293 cells co-expressing AC8 and either the α1C or α1D subunit of L-type voltage-gated Ca2+ channels. The development of this improved sensor opens the door to the study of cAMP microdomains in excitable cells that have previously been challenging due to the sensitivity of fluorescent proteins to pH changes. PMID:24086669

An improved targeted cAMP sensor to study the regulation of adenylyl cyclase 8 by Ca2+ entry through voltage-gated channels.

Directory of Open Access Journals (Sweden)

Katy L Everett

Full Text Available Here we describe an improved sensor with reduced pH sensitivity tethered to adenylyl cyclase (AC 8. The sensor was used to study cAMP dynamics in the AC8 microdomain of MIN6 cells, a pancreatic β-cell line. In these cells, AC8 was activated by Ca(2+ entry through L-type voltage-gated channels following depolarisation. This activation could be reconstituted in HEK293 cells co-expressing AC8 and either the α1C or α1D subunit of L-type voltage-gated Ca(2+ channels. The development of this improved sensor opens the door to the study of cAMP microdomains in excitable cells that have previously been challenging due to the sensitivity of fluorescent proteins to pH changes.

High voltage nanosecond generator with pulse repetition rate of 1,000 p.p.s.

Energy Technology Data Exchange (ETDEWEB)

Gubanov, V P; Korovin, S D; Stepchenko, A S [High Current Electronics Institute, Tomsk (Russian Federation)

1997-12-31

A compact high voltage nanosecond generator is described with a pulse repetition rate up to 1000 p.p.s. The generator includes a 30-Ohm coaxial forming line charged by a built-in Tesla transformer with a high coupling coefficient, and a high voltage (N{sub 2}) gas gap switch with gas blowing between the electrodes. The maximum forming line charge voltage is 450 kV, the pulse duration is about 4 ns, and its amplitude for a matched load is up to 200 kV. (author). 3 figs., 9 refs.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor

Science.gov (United States)

Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K.; Shi, Yingtang; Wagner, Paul G.; Pivaroff-Ward, Kendra; Sassic, Jessica K.; Bayliss, Douglas A.

2013-01-01

The Ether-a-go-go (EAG) superfamily of voltage-gated K+ channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K+ currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K+ channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance–voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn2+. Low pH similarly reduces Mg2+ sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca2+. Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K+ currents observed in vivo. PMID:23712551

External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor.

Science.gov (United States)

Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K; Shi, Yingtang; Wagner, Paul G; Pivaroff-Ward, Kendra; Sassic, Jessica K; Bayliss, Douglas A; Jegla, Timothy

2013-06-01

The Ether-a-go-go (EAG) superfamily of voltage-gated K(+) channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K(+) currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K(+) channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance-voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn(2+). Low pH similarly reduces Mg(2+) sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca(2+). Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K(+) currents observed in vivo.

Symmetric voltage-controlled variable resistance

Science.gov (United States)

Vanelli, J. C.

1978-01-01

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

Science.gov (United States)

Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

2014-03-01

The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

Two distinct voltage-sensing domains control voltage sensitivity and kinetics of current activation in CaV1.1 calcium channels.

Science.gov (United States)

Tuluc, Petronel; Benedetti, Bruno; Coste de Bagneaux, Pierre; Grabner, Manfred; Flucher, Bernhard E

2016-06-01

Alternative splicing of the skeletal muscle CaV1.1 voltage-gated calcium channel gives rise to two channel variants with very different gating properties. The currents of both channels activate slowly; however, insertion of exon 29 in the adult splice variant CaV1.1a causes an ∼30-mV right shift in the voltage dependence of activation. Existing evidence suggests that the S3-S4 linker in repeat IV (containing exon 29) regulates voltage sensitivity in this voltage-sensing domain (VSD) by modulating interactions between the adjacent transmembrane segments IVS3 and IVS4. However, activation kinetics are thought to be determined by corresponding structures in repeat I. Here, we use patch-clamp analysis of dysgenic (CaV1.1 null) myotubes reconstituted with CaV1.1 mutants and chimeras to identify the specific roles of these regions in regulating channel gating properties. Using site-directed mutagenesis, we demonstrate that the structure and/or hydrophobicity of the IVS3-S4 linker is critical for regulating voltage sensitivity in the IV VSD, but by itself cannot modulate voltage sensitivity in the I VSD. Swapping sequence domains between the I and the IV VSDs reveals that IVS4 plus the IVS3-S4 linker is sufficient to confer CaV1.1a-like voltage dependence to the I VSD and that the IS3-S4 linker plus IS4 is sufficient to transfer CaV1.1e-like voltage dependence to the IV VSD. Any mismatch of transmembrane helices S3 and S4 from the I and IV VSDs causes a right shift of voltage sensitivity, indicating that regulation of voltage sensitivity by the IVS3-S4 linker requires specific interaction of IVS4 with its corresponding IVS3 segment. In contrast, slow current kinetics are perturbed by any heterologous sequences inserted into the I VSD and cannot be transferred by moving VSD I sequences to VSD IV. Thus, CaV1.1 calcium channels are organized in a modular manner, and control of voltage sensitivity and activation kinetics is accomplished by specific molecular mechanisms

Temperature and Voltage Coupling to Channel Opening in Transient Receptor Potential Melastatin 8 (TRPM8)*♦

Science.gov (United States)

Raddatz, Natalia; Castillo, Juan P.; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

2014-01-01

Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca2+-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol−1. The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening. PMID:25352597

Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

International Nuclear Information System (INIS)

Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

2006-01-01

Ce-doped CaGa 2 S 4 and SrGa 2 S 4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H 2 S and O 2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce 3+ activated CaGa 2 S 4 and SrGa 2 S 4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m 2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O 2 gas stream. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Coupling between the voltage-sensing and phosphatase domains of Ci-VSP.

Science.gov (United States)

Villalba-Galea, Carlos A; Miceli, Francesco; Taglialatela, Maurizio; Bezanilla, Francisco

2009-07-01

The Ciona intestinalis voltage sensor-containing phosphatase (Ci-VSP) shares high homology with the phosphatidylinositol phosphatase enzyme known as PTEN (phosphatase and tensin homologue deleted on chromosome 10). We have taken advantage of the similarity between these proteins to inquire about the coupling between the voltage sensing and the phosphatase domains in Ci-VSP. Recently, it was shown that four basic residues (R11, K13, R14, and R15) in PTEN are critical for its binding onto the membrane, required for its catalytic activity. Ci-VSP has three of the basic residues of PTEN. Here, we show that when R253 and R254 (which are the homologues of R14 and R15 in PTEN) are mutated to alanines in Ci-VSP, phosphatase activity is disrupted, as revealed by a lack of effect on the ionic currents of KCNQ2/3, where current decrease is a measure of phosphatase activity. The enzymatic activity was not rescued by the introduction of lysines, indicating that the binding is an arginine-specific interaction between the phosphatase binding domain and the membrane, presumably through the phosphate groups of the phospholipids. We also found that the kinetics and steady-state voltage dependence of the S4 segment movement are affected when the arginines are not present, indicating that the interaction of R253 and R254 with the membrane, required for the catalytic action of the phosphatase, restricts the movement of the voltage sensor.

Methods and apparatuses for low-noise magnetic sensors

KAUST Repository

Kosel, Jü rgen; Sun, Jian

2015-01-01

Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Methods and apparatuses for low-noise magnetic sensors

KAUST Repository

Kosel, Jurgen

2015-10-20

Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

A Low Power 2.4 GHz CMOS Mixer Using Forward Body Bias Technique for Wireless Sensor Network

Science.gov (United States)

Yin, C. J.; Murad, S. A. Z.; Harun, A.; Ramli, M. M.; Zulkifli, T. Z. A.; Karim, J.

2018-03-01

Wireless sensor network (WSN) is a highly-demanded application since the evolution of wireless generation which is often used in recent communication technology. A radio frequency (RF) transceiver in WSN should have a low power consumption to support long operating times of mobile devices. A down-conversion mixer is responsible for frequency translation in a receiver. By operating a down-conversion mixer at a low supply voltage, the power consumed by WSN receiver can be greatly reduced. This paper presents a development of low power CMOS mixer using forward body bias technique for wireless sensor network. The proposed mixer is implemented using CMOS 0.13 μm Silterra technology. The forward body bias technique is adopted to obtain low power consumption. The simulation results indicate that a low power consumption of 0.91 mW is achieved at 1.6 V supply voltage. Moreover, the conversion gain (CG) of 21.83 dB, the noise figure (NF) of 16.51 dB and the input-referred third-order intercept point (IIP3) of 8.0 dB at 2.4 GHz are obtained. The proposed mixer is suitable for wireless sensor network.

Coupling between the voltage-sensing and pore domains in a voltage-gated potassium channel.

Science.gov (United States)

Schow, Eric V; Freites, J Alfredo; Nizkorodov, Alex; White, Stephen H; Tobias, Douglas J

2012-07-01

Voltage-dependent potassium (Kv), sodium (Nav), and calcium channels open and close in response to changes in transmembrane (TM) potential, thus regulating cell excitability by controlling ion flow across the membrane. An outstanding question concerning voltage gating is how voltage-induced conformational changes of the channel voltage-sensing domains (VSDs) are coupled through the S4-S5 interfacial linking helices to the opening and closing of the pore domain (PD). To investigate the coupling between the VSDs and the PD, we generated a closed Kv channel configuration from Aeropyrum pernix (KvAP) using atomistic simulations with experiment-based restraints on the VSDs. Full closure of the channel required, in addition to the experimentally determined TM displacement, that the VSDs be displaced both inwardly and laterally around the PD. This twisting motion generates a tight hydrophobic interface between the S4-S5 linkers and the C-terminal ends of the pore domain S6 helices in agreement with available experimental evidence.

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

International Nuclear Information System (INIS)

Terzo, S; Macchiolo, A; Nisius, R; Paschen, B

2014-01-01

Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 10 16 n eq /cm 2

Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications

Science.gov (United States)

Chung, Wen-Yaw; Yang, Chung-Huang; Peng, Kang-Chu; Yeh, M. H.

2003-04-01

This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.

Electrophysiological characteristics of a SCN5A voltage sensors mutation R1629Q associated with Brugada syndrome.

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Zhipeng Zeng

Full Text Available Brugada syndrome (BrS is an inherited arrhythmogenic syndrome leading to sudden cardiac death, partially associated with autosomal dominant mutations in SCN5A, which encodes the cardiac sodium channel alpha-subunit (Nav1.5. To date some SCN5A mutations related with BrS have been identified in voltage sensor of Nav1.5. Here, we describe a dominant missense mutation (R1629Q localized in the fourth segment of domain IV region (DIV-S4 in a Chinese Han family. The mutation was identified by direct sequencing of SCN5A from the proband's DNA. Co-expression of Wild-type (WT or R1629Q Nav1.5 channel and hβ1 subunit were achieved in human embryonic kidney cells by transient transfection. Sodium currents were recorded using whole cell patch-clamp protocols. No significant changes between WT and R1629Q currents were observed in current density or steady-state activation. However, hyperpolarized shift of steady-state inactivation curve was identified in cells expressing R1629Q channel (WT: V1/2 = -81.1 ± 1.3 mV, n = 13; R1629Q: V1/2 = -101.7 ± 1.2 mV, n = 18. Moreover, R1629Q channel showed enhanced intermediate inactivation and prolonged recovery time from inactivation. In summary, this study reveals that R1629Q mutation causes a distinct loss-of-function of the channel due to alter its electrophysiological characteristics, and facilitates our understanding of biophysical mechanisms of BrS.

Differential-output B-dot and D-dot monitors for current and voltage measurements on a 20-MA, 3-MV pulsed-power accelerator

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T. C. Wagoner

2008-10-01

Full Text Available We have developed a system of differential-output monitors that diagnose current and voltage in the vacuum section of a 20-MA 3-MV pulsed-power accelerator. The system includes 62 gauges: 3 current and 6 voltage monitors that are fielded on each of the accelerator’s 4 vacuum-insulator stacks, 6 current monitors on each of the accelerator’s 4 outer magnetically insulated transmission lines (MITLs, and 2 current monitors on the accelerator’s inner MITL. The inner-MITL monitors are located 6 cm from the axis of the load. Each of the stack and outer-MITL current monitors comprises two separate B-dot sensors, each of which consists of four 3-mm-diameter wire loops wound in series. The two sensors are separately located within adjacent cavities machined out of a single piece of copper. The high electrical conductivity of copper minimizes penetration of magnetic flux into the cavity walls, which minimizes changes in the sensitivity of the sensors on the 100-ns time scale of the accelerator’s power pulse. A model of flux penetration has been developed and is used to correct (to first order the B-dot signals for the penetration that does occur. The two sensors are designed to produce signals with opposite polarities; hence, each current monitor may be regarded as a single detector with differential outputs. Common-mode-noise rejection is achieved by combining these signals in a 50-Ω balun. The signal cables that connect the B-dot monitors to the balun are chosen to provide reasonable bandwidth and acceptable levels of Compton drive in the bremsstrahlung field of the accelerator. A single 50-Ω cable transmits the output signal of each balun to a double-wall screen room, where the signals are attenuated, digitized (0.5-ns/sample, numerically compensated for cable losses, and numerically integrated. By contrast, each inner-MITL current monitor contains only a single B-dot sensor. These monitors are fielded in opposite-polarity pairs. The two

A microcontroller application as X-ray machine's high voltage controller

International Nuclear Information System (INIS)

Wiranto Budi Santoso; Beny Syawaludin

2010-01-01

A micro controller application as x-ray machine's high voltage controller has been carried out. The purpose of this micro controller application is to give an accurate high voltage supply to the x-ray tube so that the x-ray machine could produce the result as expected. The micro controller based X-ray machine's high voltage controller receives an input voltage from the keypad. This input value is displayed in the LCD (Liquid Crystal Display) screen. Then micro controller uses this input data to drive a stepper motor. The stepper motor adjusts the high voltage auto transformer's output according to the input value. The micro controller is programmed using BASCOM-8051 compiler. The test results show that the stepper motor could rotate according to an input value (author)

The Molecular Basis of Polyunsaturated Fatty Acid Interactions with the Shaker Voltage-Gated Potassium Channel.

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Samira Yazdi

2016-01-01

Full Text Available Voltage-gated potassium (KV channels are membrane proteins that respond to changes in membrane potential by enabling K+ ion flux across the membrane. Polyunsaturated fatty acids (PUFAs induce channel opening by modulating the voltage-sensitivity, which can provide effective treatment against refractory epilepsy by means of a ketogenic diet. While PUFAs have been reported to influence the gating mechanism by electrostatic interactions to the voltage-sensor domain (VSD, the exact PUFA-protein interactions are still elusive. In this study, we report on the interactions between the Shaker KV channel in open and closed states and a PUFA-enriched lipid bilayer using microsecond molecular dynamics simulations. We determined a putative PUFA binding site in the open state of the channel located at the protein-lipid interface in the vicinity of the extracellular halves of the S3 and S4 helices of the VSD. In particular, the lipophilic PUFA tail covered a wide range of non-specific hydrophobic interactions in the hydrophobic central core of the protein-lipid interface, while the carboxylic head group displayed more specific interactions to polar/charged residues at the extracellular regions of the S3 and S4 helices, encompassing the S3-S4 linker. Moreover, by studying the interactions between saturated fatty acids (SFA and the Shaker KV channel, our study confirmed an increased conformational flexibility in the polyunsaturated carbon tails compared to saturated carbon chains, which may explain the specificity of PUFA action on channel proteins.

Deconvolution of Voltage Sensor Time Series and Electro-diffusion Modeling Reveal the Role of Spine Geometry in Controlling Synaptic Strength.

Science.gov (United States)

Cartailler, Jerome; Kwon, Taekyung; Yuste, Rafael; Holcman, David

2018-03-07

Most synaptic excitatory connections are made on dendritic spines. But how the voltage in spines is modulated by its geometry remains unclear. To investigate the electrical properties of spines, we combine voltage imaging data with electro-diffusion modeling. We first present a temporal deconvolution procedure for the genetically encoded voltage sensor expressed in hippocampal cultured neurons and then use electro-diffusion theory to compute the electric field and the current-voltage conversion. We extract a range for the neck resistances of 〈R〉=100±35MΩ. When a significant current is injected in a spine, the neck resistance can be inversely proportional to its radius, but not to the radius square, as predicted by Ohm's law. We conclude that the postsynaptic voltage cannot only be modulated by changing the number of receptors, but also by the spine geometry. Thus, spine morphology could be a key component in determining synaptic transduction and plasticity. Copyright © 2018 Elsevier Inc. All rights reserved.

FR4-Based Electromagnetic Scanning Micromirror Integrated with Angle Sensor

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Hongjie Lei

2018-05-01

Full Text Available This paper presents a flame retardant 4 (FR4-based electromagnetic scanning micromirror, which aims to overcome the limitations of conventional microelectromechanical systems (MEMS micromirrors for the large-aperture and low-frequency scanning applications. This micromirror is fabricated through a commercial printed circuit board (PCB technology at a low cost and with a short process cycle, before an aluminum-coated silicon mirror plate with a large aperture is bonded on the FR4 platform to provide a high surface quality. In particular, an electromagnetic angle sensor is integrated to monitor the motion of the micromirror in real time. A prototype has been assembled and tested. The results show that the micromirror can reach the optical scan angle of 11.2 ∘ with a low driving voltage of only 425 mV at resonance (361.8 Hz. At the same time, the signal of the integrated angle sensor also shows good signal-to-noise ratio, linearity and sensitivity. Finally, the reliability of the FR4 based micro-mirror has been tested. The prototype successfully passes both shock and vibration tests. Furthermore, the results of the long-term mechanical cycling test (50 million cycles suggest that the maximum variations of resonant frequency and scan angle are less than 0.3% and 6%, respectively. Therefore, this simple and robust micromirror has great potential in being useful in a number of optical microsystems, especially when large-aperture or low-frequency is required.

Design of a Humidity Sensor Tag for Passive Wireless Applications.

Science.gov (United States)

Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

2015-10-07

This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader.

Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

International Nuclear Information System (INIS)

Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo; Kim, Hwajeong; Lee, Joon-Hyung; Park, Soo-Young; Kang, Inn-Kyu

2014-01-01

We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4 ′ -pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm 2 /Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V D ) and gate (V G ) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V D and V G . The best voltage combination was V D = −0.2 V and V G = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors

Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements

DEFF Research Database (Denmark)

Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar

2008-01-01

Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development...

Interactions between charged residues in the transmembrane segments of the voltage-sensing domain in the hERG channel.

Science.gov (United States)

Zhang, M; Liu, J; Jiang, M; Wu, D-M; Sonawane, K; Guy, H R; Tseng, G-N

2005-10-01

Studies on voltage-gated K channels such as Shaker have shown that positive charges in the voltage-sensor (S4) can form salt bridges with negative charges in the surrounding transmembrane segments in a state-dependent manner, and different charge pairings can stabilize the channels in closed or open states. The goal of this study is to identify such charge interactions in the hERG channel. This knowledge can provide constraints on the spatial relationship among transmembrane segments in the channel's voltage-sensing domain, which are necessary for modeling its structure. We first study the effects of reversing S4's positive charges on channel activation. Reversing positive charges at the outer (K525D) and inner (K538D) ends of S4 markedly accelerates hERG activation, whereas reversing the 4 positive charges in between either has no effect or slows activation. We then use the 'mutant cycle analysis' to test whether D456 (outer end of S2) and D411 (inner end of S1) can pair with K525 and K538, respectively. Other positive charges predicted to be able, or unable, to interact with D456 or D411 are also included in the analysis. The results are consistent with predictions based on the distribution of these charged residues, and confirm that there is functional coupling between D456 and K525 and between D411 and K538.

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Science.gov (United States)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

Use of multi-functional flexible micro-sensors for in situ measurement of temperature, voltage and fuel flow in a proton exchange membrane fuel cell.

Science.gov (United States)

Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

2010-01-01

Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased.

Bioelectrochemical methane (CH4) production in anaerobic digestion at different supplemental voltages.

Science.gov (United States)

Choi, Kwang-Soon; Kondaveeti, Sanath; Min, Booki

2017-12-01

Microbial electrolysis cells (MECs) at various cell voltages (0.5, 0.7 1.0 and 1.5V) were operated in anaerobic fermentation. During the start-up period, the cathode potential decreased from -0.63 to -1.01V, and CH 4 generation increased from 168 to 199ml. At an applied voltage of 1.0V, the highest methane yields of 408.3ml CH 4 /g COD glucose was obtained, which was 30.3% higher than in the control tests (313.4ml CH 4 /g COD glucose). The average current of 5.1mA was generated at 1.0V at which the maximum methane yield was obtained. The other average currents were 1.42, 3.02, 0.53mA at 0.5, 0.7, and 1.5V, respectively. Cyclic voltammetry and EIS analysis revealed that enhanced reduction currents were present at all cell voltages with biocatalyzed cathode electrodes (no reduction without biofilm), and the highest value was obtained with 1V external voltage. Copyright © 2017 Elsevier Ltd. All rights reserved.

Evaluation of the Hydrolab HL4 water-quality sonde and sensors

Science.gov (United States)

Snazelle, Teri T.

2017-12-18

The U.S. Geological Survey (USGS) Hydrologic Instrumentation Facility evaluated three Hydrolab HL4 multiparameter water-quality sondes by OTT Hydromet. The sondes were equipped with temperature, conductivity, pH, dissolved oxygen (DO), and turbidity sensors. The sensors were evaluated for compliance with the USGS National Field Manual for the Collection of Water-Quality Data (NFM) criteria for continuous water-quality monitors and to verify the validity of the manufacturer’s technical specifications. The conductivity sensors were evaluated for the accuracy of the specific conductance (SC) values (conductance at 25 degrees Celsius [oC]), that were calculated by using the vendor default method, Hydrolab Fresh. The HL4’s communication protocols and operating temperature range along with accuracy of the water-quality sensors were tested in a controlled laboratory setting May 1–19, 2016. To evaluate the sonde’s performance in a surface-water field application, an HL4 equipped with temperature, conductivity, pH, DO, and turbidity sensors was deployed June 20–July 22, 2016, at USGS water-monitoring site 02492620, Pearl River at National Space Technology Laboratories (NSTL) Station, Mississippi, located near Bay Saint Louis, Mississippi, and compared to the adjacent well-maintained EXO2 site sonde.The three HL4 sondes met the USGS temperature testing criteria and the manufacturer’s technical specifications for temperature based upon the median room temperature difference between the measured and standard temperatures, but two of the three sondes exceeded the allowable difference criteria at the temperature extremes of approximately 5 and 40 ºC. Two sondes met the USGS criteria for SC. One of the sondes failed the criteria for SC when evaluated in a 100,000-microsiemens-per-centimeter (μS/cm) standard at room temperature, and also failed in a 10,000-μS/cm standard at 5, 15, and 40 ºC. All three sondes met the USGS criteria for pH and DO at room temperature

Sensors, Volume 4, Thermal Sensors

Science.gov (United States)

Scholz, Jorg; Ricolfi, Teresio

1996-12-01

'Sensors' is the first self-contained series to deal with the whole area of sensors. It describes general aspects, technical and physical fundamentals, construction, function, applications and developments of the various types of sensors. This volume describes the construction and applicational aspects of thermal sensors while presenting a rigorous treatment of the underlying physical principles. It provides a unique overview of the various categories of sensors as well as of specific groups, e.g. temperature sensors (resistance thermometers, thermocouples, and radiation thermometers), noise and acoustic thermometers, heat-flow and mass-flow sensors. Specific facettes of applications are presented by specialists from different fields including process control, automotive technology and cryogenics. This volume is an indispensable reference work and text book for both specialists and newcomers, researchers and developers.

Gabapentin Modulates HCN4 Channel Voltage-Dependence

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Han-Shen Tae

2017-08-01

Full Text Available Gabapentin (GBP is widely used to treat epilepsy and neuropathic pain. There is evidence that GBP can act on hyperpolarization-activated cation (HCN channel-mediated Ih in brain slice experiments. However, evidence showing that GBP directly modulates HCN channels is lacking. The effect of GBP was tested using two-electrode voltage clamp recordings from human HCN1, HCN2, and HCN4 channels expressed in Xenopus oocytes. Whole-cell recordings were also made from mouse spinal cord slices targeting either parvalbumin positive (PV+ or calretinin positive (CR+ inhibitory neurons. The effect of GBP on Ih was measured in each inhibitory neuron population. HCN4 expression was assessed in the spinal cord using immunohistochemistry. When applied to HCN4 channels, GBP (100 μM caused a hyperpolarizing shift in the voltage of half activation (V1/2 thereby reducing the currents. Gabapentin had no impact on the V1/2 of HCN1 or HCN2 channels. There was a robust increase in the time to half activation for HCN4 channels with only a small increase noted for HCN1 channels. Gabapentin also caused a hyperpolarizing shift in the V1/2 of Ih measured from HCN4-expressing PV+ inhibitory neurons in the spinal dorsal horn. Gabapentin had minimal effect on Ih recorded from CR+ neurons. Consistent with this, immunohistochemical analysis revealed that the majority of CR+ inhibitory neurons do not express somatic HCN4 channels. In conclusion, GBP reduces HCN4 channel-mediated currents through a hyperpolarized shift in the V1/2. The HCN channel subtype selectivity of GBP provides a unique tool for investigating HCN4 channel function in the central nervous system. The HCN4 channel is a candidate molecular target for the acute analgesic and anticonvulsant actions of GBP.

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

Science.gov (United States)

Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

2015-08-01

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

Giant magnetoimpedance intrinsic impedance and voltage sensitivity of rapidly solidified Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} amorphous wire for highly sensitive sensors applications

Energy Technology Data Exchange (ETDEWEB)

Das, Tarun K.; Mandal, Sushil K. [CSIR - National Metallurgical Laboratory, NDE and Magnetic Materials Group, MST Division, Jamshedpur (India); Banerji, Pallab [Indian Institute of Technology, Kharagpur, Materials Science Centre, Kharagpur (India)

2016-11-15

We report a systematic study of the influence of wire length, L, dependence of giant magneto-impedance (GMI) sensitivity of Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} soft magnetic amorphous wire of diameter ∝ 100 μm developed by in-water quenching technique. The magnetization behaviour (hysteresis loops) of the wire with different length (L = 1, 2, 3, 5, 8 and 10 cm) has been evaluated by fuxmetric induction method. It was observed that the behaviour of the hysteresis loops change drastically with the wire length, being attributed to the existence of a critical length, L{sub C}, found to be around 3 cm. GMI measurements have been taken using automated GMI measurement system and the GMI sensitivities in terms of intrinsic impedance sensitivity (S{sub Ω/Am}{sup -1}) and voltage sensitivity (S{sub V/Am}{sup -1}) of the wire have been evaluated under optimal bias field and excitation current. It was found that the maximum (S{sub Ω/Am}{sup -1}){sub max} ∼ 0.63 Ω/kAm{sup -1}/cm and (S{sub V/Am}{sup -1}){sub max} ∼ 3.10 V/kAm{sup -1}/cm were achieved at a critical length L{sub C} ∝ 3 cm of the wire for an AC current of 5 mA and a frequency of 5 MHz. These findings provide crucial insights for optimization of the geometrical dimensions of magnetic sensing elements and important practical guidance for designing high sensitive GMI sensors. The relevant combinations of magnetic material parameters and operating conditions that optimize the sensitivity are highlighted. (orig.)

Optimization of Pockels electric field in transverse modulated optical voltage sensor

Science.gov (United States)

Huang, Yifan; Xu, Qifeng; Chen, Kun-Long; Zhou, Jie

2018-05-01

This paper investigates the possibilities of optimizing the Pockels electric field in a transverse modulated optical voltage sensor with a spherical electrode structure. The simulations show that due to the edge effect and the electric field concentrations and distortions, the electric field distributions in the crystal are non-uniform. In this case, a tiny variation in the light path leads to an integral error of more than 0.5%. Moreover, a 2D model cannot effectively represent the edge effect, so a 3D model is employed to optimize the electric field distributions. Furthermore, a new method to attach a quartz crystal to the electro-optic crystal along the electric field direction is proposed to improve the non-uniformity of the electric field. The integral error is reduced therefore from 0.5% to 0.015% and less. The proposed method is simple, practical and effective, and it has been validated by numerical simulations and experimental tests.

Low Cost Plastic Optical Fiber Pressure Sensor Embedded in Mattress for Vital Signal Monitoring.

Science.gov (United States)

Sartiano, Demetrio; Sales, Salvador

2017-12-13

The aim of this paper is to report the design of a low-cost plastic optical fiber (POF) pressure sensor, embedded in a mattress. We report the design of a multipoint sensor, a cheap alternative to the most common fiber sensors. The sensor is implemented using Arduino board, standard LEDs for optical communication in POF (λ = 645 nm) and a silicon light sensor. The Super ESKA ® plastic fibers were used to implement the fiber intensity sensor, arranged in a 4 × 4 matrix. During the breathing cycles, the force transmitted from the lungs to the thorax is in the order of tens of Newtons, and the respiration rate is of one breath every 2-5 s (0.2-0.5 Hz). The sensor has a resolution of force applied on a single point of 2.2-4.5%/N on the normalized voltage output, and a bandwidth of 10 Hz, it is then suitable to monitor the respiration movements. Another issue to be addressed is the presence of hysteresis over load cycles. The sensor was loaded cyclically to estimate the drift of the system, and the hysteresis was found to be negligible.

Low Cost Plastic Optical Fiber Pressure Sensor Embedded in Mattress for Vital Signal Monitoring

Directory of Open Access Journals (Sweden)

Demetrio Sartiano

2017-12-01

Full Text Available The aim of this paper is to report the design of a low-cost plastic optical fiber (POF pressure sensor, embedded in a mattress. We report the design of a multipoint sensor, a cheap alternative to the most common fiber sensors. The sensor is implemented using Arduino board, standard LEDs for optical communication in POF (λ = 645 nm and a silicon light sensor. The Super ESKA® plastic fibers were used to implement the fiber intensity sensor, arranged in a 4 × 4 matrix. During the breathing cycles, the force transmitted from the lungs to the thorax is in the order of tens of Newtons, and the respiration rate is of one breath every 2–5 s (0.2–0.5 Hz. The sensor has a resolution of force applied on a single point of 2.2–4.5%/N on the normalized voltage output, and a bandwidth of 10 Hz, it is then suitable to monitor the respiration movements. Another issue to be addressed is the presence of hysteresis over load cycles. The sensor was loaded cyclically to estimate the drift of the system, and the hysteresis was found to be negligible.

Electrochemiluminescent graphene quantum dots enhanced by MoS2 as sensing platform: a novel molecularly imprinted electrochemiluminescence sensor for 2-methyl-4-chlorophenoxyacetic acid assay

International Nuclear Information System (INIS)

Yang, Yukun; Fang, Guozhen; Wang, Xiaomin; Zhang, Fuyuan; Liu, Jingmin; Zheng, Wenjie; Wang, Shuo

2017-01-01

Highlights: • Electrochemiluminescent MoS 2 -GQDs nanocomposite was fabricated for the first time. • MoS 2 -GQDs hybrid nanocomposite was used as ECL sensing platform. • Molecularly imprinted ECL sensor was fabricated for the determination of MCPA. • MoS 2 -GQDs nanocomposite may advance the developments of ECL sensor. - Abstract: The ECL properties and application of a novel luminescent material molybdenum disulfide-graphene quantum dots (MoS 2 -GQDs) hybrid nanocomposite was reported for the first time. The hybridization of MoS 2 and GQDs endowed nanocomposite with structural and compositional advantages for boosting the ECL performance of GQDs. Impressively, the ECL could be remarkable enhanced using MoS 2 -GQDs hybrid nanocomposite, which was ∼13, ∼185 and ∼596-folds larger than the ECL intensity of GQDs, MoS 2 modified electrodes and bare electrode, respectively. Subsequently, as a sensing platform, the MoS 2 -GQDs hybrid nanocomposite was applied to fabricate molecularly imprinted electrochemiluminescence sensor for the ultrasensitive and selective determination of 2-methyl-4-chlorophenoxyacetic acid. Under optimal conditions, the detection limit of the prepared sensor was 5.5 pmol L −1 (S/N = 3) within a linear concentration range of 10 pmol L −1 –0.1 μmol L −1 . The developped sensor exhibited high sensitivity, good selectivity, reproducibility and stability, suggesting the potential for detecting pesticides and veterinary drugs at trace levels in food safety and environmental control.

Overview of the U.S. DOE Hydrogen Safety, Codes and Standards Program. Part 4: Hydrogen Sensors; Preprint

Energy Technology Data Exchange (ETDEWEB)

Buttner, William J.; Rivkin, Carl; Burgess, Robert; Brosha, Eric; Mukundan, Rangachary; James, C. Will; Keller, Jay

2016-12-01

Hydrogen sensors are recognized as a critical element in the safety design for any hydrogen system. In this role, sensors can perform several important functions including indication of unintended hydrogen releases, activation of mitigation strategies to preclude the development of dangerous situations, activation of alarm systems and communication to first responders, and to initiate system shutdown. The functionality of hydrogen sensors in this capacity is decoupled from the system being monitored, thereby providing an independent safety component that is not affected by the system itself. The importance of hydrogen sensors has been recognized by DOE and by the Fuel Cell Technologies Office's Safety and Codes Standards (SCS) program in particular, which has for several years supported hydrogen safety sensor research and development. The SCS hydrogen sensor programs are currently led by the National Renewable Energy Laboratory, Los Alamos National Laboratory, and Lawrence Livermore National Laboratory. The current SCS sensor program encompasses the full range of issues related to safety sensors, including development of advance sensor platforms with exemplary performance, development of sensor-related code and standards, outreach to stakeholders on the role sensors play in facilitating deployment, technology evaluation, and support on the proper selection and use of sensors.

Low-Cost Voltage Zero-Crossing Detector for AC-Grid Applications

Directory of Open Access Journals (Sweden)

Vorobyov Maxim

2014-10-01

Full Text Available Renewable energy sources and energy storage devices are becoming more popular. Some of them like small hydropower turbines, wind turbines and diesel generators produce AC voltage with different frequency and voltage than the main grid. For them power electronics converters are necessary. Power electronics converters presented in industry use two or three level energy conversion, although direct AC to AC converters exist, but one of the main problems is the switch commutation when current or voltage is crossing the zero point. Zero crossing sensors are used to solve this problem. They consist of current or voltage measurement unit and zero crossing detector. Different approaches are used for zero crossing: hardware or software. Hardware approach is simple but it has low precision. Software approach has high precision but it is complicated and expensive. In this paper a simple low cost high precision approach is presented. It takes all advantages from both approaches. While tested with two types of microcontrollers the precision of experimental measurement is 25 μs - 40 μs.

Disulfide mapping the voltage-sensing mechanism of a voltage-dependent potassium channel.

Science.gov (United States)

Nozaki, Tomohiro; Ozawa, Shin-Ichiro; Harada, Hitomi; Kimura, Tomomi; Osawa, Masanori; Shimada, Ichio

2016-11-17

Voltage-dependent potassium (Kv) channels allow for the selective permeability of potassium ions in a membrane potential dependent manner, playing crucial roles in neurotransmission and muscle contraction. Kv channel is a tetramer, in which each subunit possesses a voltage-sensing domain (VSD) and a pore domain (PD). Although several lines of evidence indicated that membrane depolarization is sensed as the movement of helix S4 of the VSD, the detailed voltage-sensing mechanism remained elusive, due to the difficulty of structural analyses at resting potential. In this study, we conducted a comprehensive disulfide locking analysis of the VSD using 36 double Cys mutants, in order to identify the proximal residue pairs of the VSD in the presence or absence of a membrane potential. An intramolecular SS-bond was formed between 6 Cys pairs under both polarized and depolarized environment, and one pair only under depolarized environment. The multiple conformations captured by the SS-bond can be divided by two states, up and down, where S4 lies on the extracellular and intracellular sides of the membrane, respectively, with axial rotation of 180°. The transition between these two states is caused by the S4 translocation of 12 Å, enabling allosteric regulation of the gating at the PD.

Analysis of specification of an electrode type sensor equivalent circuit on the base of impedance spectroscopy simulation

Energy Technology Data Exchange (ETDEWEB)

Ogurtsov, V I; Mathewson, A; Sheehan, M M [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)

2005-01-01

Simulation of electrochemical impedance spectroscopy (EIS) based on a LabVIEW model of a complex impedance measuring system in the frequency domain has been investigated to specify parameters of Randle's equivalent circuit, which is ordinarily used for electrode sensors. The model was based on a standard system for EIS instrumentation and consisted of a sensor modelled by Randle's equivalent circuit, a source of harmonic frequency sweep voltage applied to the sensor and a transimpedance amplifier, which transformed the sensor current to voltage. It provided impedance spectroscopy data for different levels of noise, modelled by current and voltage equivalent noise sources applied to the amplifier input. The noise influence on Randle's equivalent circuit specification was analysed by considering the behaviour of the approximation error. Different metrics including absolute, relative, semilogarithmic and logarithmic based distance between complex numbers on a complex plane were considered and compared to one another for evaluating this error. It was shown that the relative and logarithmic based metrics provide more reliable results for the determination of circuit parameters.

Sensing charges of the Ciona intestinalis voltage-sensing phosphatase.

Science.gov (United States)

Villalba-Galea, Carlos A; Frezza, Ludivine; Sandtner, Walter; Bezanilla, Francisco

2013-11-01

Voltage control over enzymatic activity in voltage-sensitive phosphatases (VSPs) is conferred by a voltage-sensing domain (VSD) located in the N terminus. These VSDs are constituted by four putative transmembrane segments (S1 to S4) resembling those found in voltage-gated ion channels. The putative fourth segment (S4) of the VSD contains positive residues that likely function as voltage-sensing elements. To study in detail how these residues sense the plasma membrane potential, we have focused on five arginines in the S4 segment of the Ciona intestinalis VSP (Ci-VSP). After implementing a histidine scan, here we show that four arginine-to-histidine mutants, namely R223H to R232H, mediate voltage-dependent proton translocation across the membrane, indicating that these residues transit through the hydrophobic core of Ci-VSP as a function of the membrane potential. These observations indicate that the charges carried by these residues are sensing charges. Furthermore, our results also show that the electrical field in VSPs is focused in a narrow hydrophobic region that separates the extracellular and intracellular space and constitutes the energy barrier for charge crossing.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

Directory of Open Access Journals (Sweden)

Zong Yao

2016-06-01

Full Text Available This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts, the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

A Disease Mutation Causing Episodic Ataxia Type I in the S1 Links Directly to the Voltage Sensor and the Selectivity Filter in Kv Channels.

Science.gov (United States)

Petitjean, Dimitri; Kalstrup, Tanja; Zhao, Juan; Blunck, Rikard

2015-09-02

The mutation F184C in Kv1.1 leads to development of episodic ataxia type I (EA1). Although the mutation has been said to alter activation kinetics and to lower expression, we show here that the underlying molecular mechanisms may be more complex. Although F184 is positioned in the "peripheral" S1 helix, it occupies a central position in the 3D fold. We show in cut-open oocyte voltage-clamp recordings of gating and ionic currents of the Shaker Kv channel expressed in Xenopus oocytes that F184 not only interacts directly with the gating charges of the S4, but also creates a functional link to the selectivity filter of the neighboring subunit. This link leads to impaired fast and slow inactivation. The effect on fast inactivation is of an allosteric nature considering that fast inactivation is caused by a linked cytosolic ball peptide. The extensive effects of F184C provide a new mechanism underlying EA. Episodic ataxia (EA) is an inherited disease that leads to occasional loss of motor control in combination with variable other symptoms such as vertigo or migraine. EA type I (EA1), studied here, is caused by mutations in a voltage-gated potassium channel that contributes to the generation of electrical signals in the brain. The mechanism by which mutations in voltage-gated potassium channels lead to EA is still unknown and there is no consistent pharmacological treatment. By studying in detail one disease-causing mutation in Kv1.1, we describe a novel molecular mechanism distinct from mechanisms described previously. This mechanism contributes to the understanding of potassium channel function in general and might lead to a better understanding of how EA develops. Copyright © 2015 the authors 0270-6474/15/3512198-09$15.00/0.

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

International Nuclear Information System (INIS)

Su Shi; Liao Xiaoping

2009-01-01

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

International Nuclear Information System (INIS)

Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

2001-01-01

Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

Development of an Intelligent Capacitive Mass Sensor Based on Co-axial Cylindrical Capacitor

Directory of Open Access Journals (Sweden)

Amir ABU AL AISH

2009-06-01

Full Text Available The paper presents a linear, robust and intelligent capacitive mass sensor made of a co-axial cylindrical capacitor. It is designed such that the mass under measurement is directly proportional to the capacitance of the sensor. The average value of the output voltage of a capacitance to voltage converter is proportional to the capacitance of the sensor. The output of the converter is measured and displayed, as mass, with the help of microcontroller. The results are free from the effect of stray capacitances which cause errors at low values of capacitances. Developed sensor is linear, free from errors due to temperature and highly flexible in design. The proto-type of the mass sensor can weigh up to 4 kilogram only.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

Science.gov (United States)

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

Science.gov (United States)

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

Rapid Cellular Phenotyping of Human Pluripotent Stem Cell-Derived Cardiomyocytes using a Genetically Encoded Fluorescent Voltage Sensor

Directory of Open Access Journals (Sweden)

Jordan S. Leyton-Mange

2014-02-01

Full Text Available In addition to their promise in regenerative medicine, pluripotent stem cells have proved to be faithful models of many human diseases. In particular, patient-specific stem cell-derived cardiomyocytes recapitulate key features of several life-threatening cardiac arrhythmia syndromes. For both modeling and regenerative approaches, phenotyping of stem cell-derived tissues is critical. Cellular phenotyping has largely relied upon expression of lineage markers rather than physiologic attributes. This is especially true for cardiomyocytes, in part because electrophysiological recordings are labor intensive. Likewise, most optical voltage indicators suffer from phototoxicity, which damages cells and degrades signal quality. Here we present the use of a genetically encoded fluorescent voltage indicator, ArcLight, which we demonstrate can faithfully report transmembrane potentials in human stem cell-derived cardiomyocytes. We demonstrate the application of this fluorescent sensor in high-throughput, serial phenotyping of differentiating cardiomyocyte populations and in screening for drug-induced cardiotoxicity.

Oxygen sensor using proton-conductor thick-film operative at room temperature. Puroton dodentai atsumaku wo mochiita joon sadogata sanso sensor

Energy Technology Data Exchange (ETDEWEB)

Miura, Norio; Yoshida, Nobuaki; Matayoshi, Naoko; Shimizu, Yoichi; Yamazoe, Noboru; Kuwata, Shigeki [Kyushu Univ., Fukuoka, (Japan) Niihama National College of Tech., Ehime, (Japan)

1989-10-01

An amperometric solid-state oxygen sensor using a proton-conductor thick-film was examined as a miniaturized and intelligent oxygen sensor operative at room temperature. The good-conditioned proton-conductor film of about 10{mu}m in thickness without holes was formed on a porous alumina substrate by spin-coating the paste containing antimonic acid and a polyvinyl alcohol binder. Using this material, the thick-film oxygen sensor was made. A limiting current, controlled by oxygen permeation through the gas-diffusion layer, was observed when an external voltage was over 1.4V. The limiting current increased linearly with an increase in oxygen partial pressure up to 1.0 atm at an external voltage of 1.6V. The 90% response time for increasing oxygen partial pressure was about 40 seconds at 30 centigrade. Moreover, it was found that the sensor could also respond to dissolved oxygen in water at room temperature. With a sensor using a hydrophobic gas-diffusion layer containing a polystyrene binder, the limiting current was linear to the dissolved oxygen concentration up to 20ppm. 15 refs., 5 figs.

Voltage Sensing in Membranes: From Macroscopic Currents to Molecular Motions.

Science.gov (United States)

Freites, J Alfredo; Tobias, Douglas J

2015-06-01

Voltage-sensing domains (VSDs) are integral membrane protein units that sense changes in membrane electric potential, and through the resulting conformational changes, regulate a specific function. VSDs confer voltage-sensitivity to a large superfamily of membrane proteins that includes voltage-gated Na[Formula: see text], K[Formula: see text], Ca[Formula: see text] ,and H[Formula: see text] selective channels, hyperpolarization-activated cyclic nucleotide-gated channels, and voltage-sensing phosphatases. VSDs consist of four transmembrane segments (termed S1 through S4). Their most salient structural feature is the highly conserved positions for charged residues in their sequences. S4 exhibits at least three conserved triplet repeats composed of one basic residue (mostly arginine) followed by two hydrophobic residues. These S4 basic side chains participate in a state-dependent internal salt-bridge network with at least four acidic residues in S1-S3. The signature of voltage-dependent activation in electrophysiology experiments is a transient current (termed gating or sensing current) upon a change in applied membrane potential as the basic side chains in S4 move across the membrane electric field. Thus, the unique structural features of the VSD architecture allow for competing requirements: maintaining a series of stable transmembrane conformations, while allowing charge motion, as briefly reviewed here.

The hitchhiker’s guide to the voltage-gated sodium channel galaxy

Science.gov (United States)

2016-01-01

Eukaryotic voltage-gated sodium (Nav) channels contribute to the rising phase of action potentials and served as an early muse for biophysicists laying the foundation for our current understanding of electrical signaling. Given their central role in electrical excitability, it is not surprising that (a) inherited mutations in genes encoding for Nav channels and their accessory subunits have been linked to excitability disorders in brain, muscle, and heart; and (b) Nav channels are targeted by various drugs and naturally occurring toxins. Although the overall architecture and behavior of these channels are likely to be similar to the more well-studied voltage-gated potassium channels, eukaryotic Nav channels lack structural and functional symmetry, a notable difference that has implications for gating and selectivity. Activation of voltage-sensing modules of the first three domains in Nav channels is sufficient to open the channel pore, whereas movement of the domain IV voltage sensor is correlated with inactivation. Also, structure–function studies of eukaryotic Nav channels show that a set of amino acids in the selectivity filter, referred to as DEKA locus, is essential for Na+ selectivity. Structures of prokaryotic Nav channels have also shed new light on mechanisms of drug block. These structures exhibit lateral fenestrations that are large enough to allow drugs or lipophilic molecules to gain access into the inner vestibule, suggesting that this might be the passage for drug entry into a closed channel. In this Review, we will synthesize our current understanding of Nav channel gating mechanisms, ion selectivity and permeation, and modulation by therapeutics and toxins in light of the new structures of the prokaryotic Nav channels that, for the time being, serve as structural models of their eukaryotic counterparts. PMID:26712848

The output characteristic of cantilever-like tactile sensor based on the inverse magnetostrictive effect

Directory of Open Access Journals (Sweden)

Lili Wan

2017-05-01

Full Text Available The output characteristic model of a magnetostrictive cantilever-like tactile sensor has been founded based on the inverse-magnetostrictive effect, the flexure mode, and the Jiles-Atherton model. The magnetostrictive sensor has been designed and an output voltage is analyzed under the conditions of bias magnetic field, contact pressure and deflection of cantilever beam. The experiment has been performed to determine the relation among the induced output voltage, bias magnetic field, and pressure. It is found that the peak of the induced output voltage increases with an increasing pressure under the bias magnetic field of 4.8kA/m. The experimental result agrees well with the theoretical one and it means that the model can describe the relation among the induced output voltage, bias magnetic field, and pressure. The sensor with a Galfenol sheet may hold potentials in sample characterization and deformation predication in artificial intelligence area.

Alpha-Particle Gas-Pressure Sensor

Science.gov (United States)

Buehler, M. C.; Bell, L. D.; Hecht, M. H.

1996-01-01

An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor. A simple two-parameter current-voltage expression was developed to describe the dependence of the ion current on pressure. The parameters are the saturation-current pressure coefficient and mu/D, the ion mobility/diffusion coefficient. The sensor is useful in the pressure range between 0.1 and 1000 mb using a 1 - mu Ci(241) Am source. Experimental results, taken between 1 and up to 200 mb, show the sensor operates with an anode voltage of 5 V and a sensitivity of 20 fA/mb in nitrogen.

FR4-based electromagnetic energy harvester for wireless sensor nodes

Science.gov (United States)

Hatipoglu, G.; Ürey, H.

2010-01-01

Electromagnetic (EM) energy harvesting seems to be one of the most promising ways to power wireless sensors in a wireless sensor network. In this paper, FR4, the most commonly used PCB material, is utilized as a mechanical vibrating structure for EM energy harvesting for body-worn sensors and intelligent tire sensors, which involve impact loadings. FR4 can be a better material for such applications compared to silicon MEMS devices due to lower stiffness and broadband response. In order to demonstrate FR4 performance and broadband response, three moving magnet type EM generator designs are developed and investigated throughout the paper. A velocity-damped harvester simulation model is first developed, including a detailed magnetic model and the magnetic damping effects. The numerical results agree well with the experimental results. Human running acceleration at the hip area that is obtained experimentally is simulated in order to demonstrate system performance, which results in a scavenged power of about 40 µW with 15 m s-2 acceleration input. The designed FR4 energy scavengers with mechanical stoppers implemented are particularly well suited for nearly periodic and non-sinusoidal high- g excitations with rich harmonic content. For the intelligent tire applications, a special compact FR4 scavenger is designed that is able to withstand large shocks and vibrations due to mechanical shock stoppers built into the structure. Using our design, 0.4 mW power across a load resistance at off-resonance operation is obtained in shaker experiments. In the actual operation, the tangential accelerations as a result of the tire-road contact are estimated to supply power around 1 mW with our design, which is sufficient for powering wireless tire sensors. The normalized power density (NPD) of the designed actuators compares favorably with most actuators reported in the literature.

FR4-based electromagnetic energy harvester for wireless sensor nodes

International Nuclear Information System (INIS)

Hatipoglu, G; Ürey, H

2010-01-01

Electromagnetic (EM) energy harvesting seems to be one of the most promising ways to power wireless sensors in a wireless sensor network. In this paper, FR4, the most commonly used PCB material, is utilized as a mechanical vibrating structure for EM energy harvesting for body-worn sensors and intelligent tire sensors, which involve impact loadings. FR4 can be a better material for such applications compared to silicon MEMS devices due to lower stiffness and broadband response. In order to demonstrate FR4 performance and broadband response, three moving magnet type EM generator designs are developed and investigated throughout the paper. A velocity-damped harvester simulation model is first developed, including a detailed magnetic model and the magnetic damping effects. The numerical results agree well with the experimental results. Human running acceleration at the hip area that is obtained experimentally is simulated in order to demonstrate system performance, which results in a scavenged power of about 40 µW with 15 m s −2 acceleration input. The designed FR4 energy scavengers with mechanical stoppers implemented are particularly well suited for nearly periodic and non-sinusoidal high- g excitations with rich harmonic content. For the intelligent tire applications, a special compact FR4 scavenger is designed that is able to withstand large shocks and vibrations due to mechanical shock stoppers built into the structure. Using our design, 0.4 mW power across a load resistance at off-resonance operation is obtained in shaker experiments. In the actual operation, the tangential accelerations as a result of the tire–road contact are estimated to supply power around 1 mW with our design, which is sufficient for powering wireless tire sensors. The normalized power density (NPD) of the designed actuators compares favorably with most actuators reported in the literature

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

International Nuclear Information System (INIS)

Patel, N.; Branch, D. W.; Cular, S.; Schamiloglu, E.

2015-01-01

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO 3 ) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment

Three phase voltage measurements with simple open air sensors

NARCIS (Netherlands)

Heesch, van E.J.M.; Caspers, R.; Gulickx, P.F.M.; Jacobs, G.A.P.; Kersten, W.F.J.; Laan, van der P.C.T.

1991-01-01

A low cost, easy to install high-voltage measuring system is described for open air substations and overhead lines. Based on the Differentiating/Integrating (D/I) principle, three free-standing capacitive pickup electrodes are used to sense the three phase to ground voltages. Apart from the

Observations of sensor bias dependent cluster centroid shifts in a prototype sensor for the LHCb Vertex Locator detector

CERN Document Server

Papadelis, Aras

2006-01-01

We present results from a recent beam test of a prototype sensor for the LHCb Vertex Locator detector, read out with the Beetle 1.3 front-end chip. We have studied the effect of the sensor bias voltage on the reconstructed cluster positions in a sensor placed in a 120GeV pion beam at a 10° incidence angle. We find an unexplained sysematic shift in the reconstructed cluster centroid when increasing the bias voltage on an already overdepleted sensor. The shift is independent of strip pitch and sensor thickness.

Sensing Properties of Pd-Loaded Co3O4 Film for a ppb-Level NO Gas Sensor

Directory of Open Access Journals (Sweden)

Takafumi Akamatsu

2015-04-01

Full Text Available We prepared 0.1 wt%–30 wt% Pd-loaded Co3O4 by a colloidal mixing method and investigated the sensing properties of a Pd-loaded Co3O4 sensor element, such as the sensor response, 90% response time, 90% recovery time, and signal-to-noise (S/N ratio, toward low nitric oxide (NO gas levels in the range from 50 to 200 parts per billion. The structural properties of the Pd-loaded Co3O4 powder were investigated using X-ray diffraction analysis and transmission electron microscopy. Pd in the powder existed as PdO. The sensor elements with 0.1 wt%–10 wt% Pd content have higher sensor properties than those without any Pd content. The response of the sensor element with a 30 wt% Pd content decreased markedly because of the aggregation and poor dispersibility of the PdO particles. High sensor response and S/N ratio toward the NO gas were achieved when a sensor element with 10 wt% Pd content was used.

A CMOS pressure sensor tag chip for passive wireless applications.

Science.gov (United States)

Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

2015-03-23

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

A Quantitative Evaluation of Drive Pattern Selection for Optimizing EIT-Based Stretchable Sensors

Directory of Open Access Journals (Sweden)

Stefania Russo

2017-08-01

Full Text Available Electrical Impedance Tomography (EIT is a medical imaging technique that has been recently used to realize stretchable pressure sensors. In this method, voltage measurements are taken at electrodes placed at the boundary of the sensor and are used to reconstruct an image of the applied touch pressure points. The drawback with EIT-based sensors, however, is their low spatial resolution due to the ill-posed nature of the EIT reconstruction. In this paper, we show our performance evaluation of different EIT drive patterns, specifically strategies for electrode selection when performing current injection and voltage measurements. We compare voltage data with Signal-to-Noise Ratio (SNR and Boundary Voltage Changes (BVC, and study image quality with Size Error (SE, Position Error (PE and Ringing (RNG parameters, in the case of one-point and two-point simultaneous contact locations. The study shows that, in order to improve the performance of EIT based sensors, the electrode selection strategies should dynamically change correspondingly to the location of the input stimuli. In fact, the selection of one drive pattern over another can improve the target size detection and position accuracy up to 4.7% and 18%, respectively.

A Quantitative Evaluation of Drive Pattern Selection for Optimizing EIT-Based Stretchable Sensors.

Science.gov (United States)

Russo, Stefania; Nefti-Meziani, Samia; Carbonaro, Nicola; Tognetti, Alessandro

2017-08-31

Electrical Impedance Tomography (EIT) is a medical imaging technique that has been recently used to realize stretchable pressure sensors. In this method, voltage measurements are taken at electrodes placed at the boundary of the sensor and are used to reconstruct an image of the applied touch pressure points. The drawback with EIT-based sensors, however, is their low spatial resolution due to the ill-posed nature of the EIT reconstruction. In this paper, we show our performance evaluation of different EIT drive patterns, specifically strategies for electrode selection when performing current injection and voltage measurements. We compare voltage data with Signal-to-Noise Ratio (SNR) and Boundary Voltage Changes (BVC), and study image quality with Size Error (SE), Position Error (PE) and Ringing (RNG) parameters, in the case of one-point and two-point simultaneous contact locations. The study shows that, in order to improve the performance of EIT based sensors, the electrode selection strategies should dynamically change correspondingly to the location of the input stimuli. In fact, the selection of one drive pattern over another can improve the target size detection and position accuracy up to 4.7% and 18%, respectively.

Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

Science.gov (United States)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael

2016-04-26

A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

A wireless acoustic emission sensor remotely powered by light

International Nuclear Information System (INIS)

Zahedi, F; Huang, H

2014-01-01

In this paper, wireless sensing of acoustic emission (AE) signals using a battery-free sensor node remotely powered by light is presented. The wireless sensor consists of a piezoelectric wafer active sensor (PWAS) for AE signal acquisition and a wireless transponder that performs signal conditioning, frequency conversion, and wireless transmission. For signal conditioning, a voltage follower that consumes less than 2 mW was introduced to buffer the high impedance of the PWAS from the low impedance of the wireless transponder. A photocell-based energy harvester with a stable voltage output was developed to power the voltage follower so that the wireless AE sensor can operate without an external power source. The principle of operation of the battery-free wireless AE sensor node and the sensor interrogation system is described, followed by a detailed description of the hardware implementation. The voltage follower and the wireless channel were characterized by ultrasound pitch–catch and pencil lead break experiments. (paper)

Triboelectric Hydrogen Gas Sensor with Pd Functionalized Surface

Directory of Open Access Journals (Sweden)

Sung-Ho Shin

2016-10-01

Full Text Available Palladium (Pd-based hydrogen (H2 gas sensors have been widely investigated thanks to its fast reaction and high sensitivity to hydrogen. Various sensing mechanisms have been adopted for H2 gas sensors; however, all the sensors must be powered through an external battery. We report here an H2 gas sensor that can detect H2 by measuring the output voltages generated during contact electrification between two friction surfaces. When the H2 sensor, composed of Pd-coated ITO (indium tin oxide and PET (polyethylene Terephthalate film, is exposed to H2, its output voltage is varied in proportion to H2 concentration because the work function (WF of Pd-coated surface changes, altering triboelectric charging behavior. Specifically, the output voltage of the sensor is gradually increased as exposing H2 concentration increases. Reproducible and sensitive sensor response was observed up 1% H2 exposure. The approach introduced here can easily be adopted to development of triboelectric gas sensors detecting other gas species.

Chemical sensors are hybrid-input memristors

Science.gov (United States)

Sysoev, V. I.; Arkhipov, V. E.; Okotrub, A. V.; Pershin, Y. V.

2018-04-01

Memristors are two-terminal electronic devices whose resistance depends on the history of input signal (voltage or current). Here we demonstrate that the chemical gas sensors can be considered as memristors with a generalized (hybrid) input, namely, with the input consisting of the voltage, analyte concentrations and applied temperature. The concept of hybrid-input memristors is demonstrated experimentally using a single-walled carbon nanotubes chemical sensor. It is shown that with respect to the hybrid input, the sensor exhibits some features common with memristors such as the hysteretic input-output characteristics. This different perspective on chemical gas sensors may open new possibilities for smart sensor applications.

Conserved Residues within the Putative S4–S5 Region Serve Distinct Functions among Thermosensitive Vanilloid Transient Receptor Potential (TRPV) Channels

Czech Academy of Sciences Publication Activity Database

Boukalová, Štěpána; Maršáková, Lenka; Teisinger, Jan; Vlachová, Viktorie

2010-01-01

Roč. 285, č. 53 (2010), s. 41455-41462 ISSN 0021-9258 R&D Projects: GA ČR GA305/09/0081; GA ČR GAP301/10/1159; GA AV ČR(CZ) IAA600110701; GA MŠk(CZ) 1M0517; GA MŠk(CZ) LC554 Grant - others:Univerzita Karlova(CZ) 26110 Institutional research plan: CEZ:AV0Z50110509 Keywords : vanilloid receptor * voltage sensor * transient receptor potential Subject RIV: FH - Neurology Impact factor: 5.328, year: 2010

NMR investigation of the isolated second voltage-sensing domain of human Nav1.4 channel.

Science.gov (United States)

Paramonov, A S; Lyukmanova, E N; Myshkin, M Yu; Shulepko, M A; Kulbatskii, D S; Petrosian, N S; Chugunov, A O; Dolgikh, D A; Kirpichnikov, M P; Arseniev, A S; Shenkarev, Z O

2017-03-01

Voltage-gated Na + channels are essential for the functioning of cardiovascular, muscular, and nervous systems. The α-subunit of eukaryotic Na + channel consists of ~2000 amino acid residues and encloses 24 transmembrane (TM) helices, which form five membrane domains: four voltage-sensing (VSD) and one pore domain. The structural complexity significantly impedes recombinant production and structural studies of full-sized Na + channels. Modular organization of voltage-gated channels gives an idea for studying of the isolated second VSD of human skeletal muscle Nav1.4 channel (VSD-II). Several variants of VSD-II (~150a.a., four TM helices) with different N- and C-termini were produced by cell-free expression. Screening of membrane mimetics revealed low stability of VSD-II samples in media containing phospholipids (bicelles, nanodiscs) associated with the aggregation of electrically neutral domain molecules. The almost complete resonance assignment of 13 C, 15 N-labeled VSD-II was obtained in LPPG micelles. The secondary structure of VSD-II showed similarity with the structures of bacterial Na + channels. The fragment of S4 TM helix between the first and second conserved Arg residues probably adopts 3 10 -helical conformation. Water accessibility of S3 helix, observed by the Mn 2+ titration, pointed to the formation of water-filled crevices in the micelle embedded VSD-II. 15 N relaxation data revealed characteristic pattern of μs-ms time scale motions in the VSD-II regions sharing expected interhelical contacts. VSD-II demonstrated enhanced mobility at ps-ns time scale as compared to isolated VSDs of K + channels. These results validate structural studies of isolated VSDs of Na + channels and show possible pitfalls in application of this 'divide and conquer' approach. Copyright © 2017 Elsevier B.V. All rights reserved.

In-situ monitoring of internal local temperature and voltage of proton exchange membrane fuel cells.

Science.gov (United States)

Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

2010-01-01

The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm(2), and that with a sensor is 426 mW/cm(2). Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

Energy harvesting in high voltage measuring techniques

International Nuclear Information System (INIS)

Żyłka, Pawel; Doliński, Marcin

2016-01-01

The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed. (paper)

Ultrathin flexible piezoelectric sensors for monitoring eye fatigue

Science.gov (United States)

Lü, Chaofeng; Wu, Shuang; Lu, Bingwei; Zhang, Yangyang; Du, Yangkun; Feng, Xue

2018-02-01

Eye fatigue is a symptom induced by long-term work of both eyes and brains. Without proper treatment, eye fatigue may incur serious problems. Current studies on detecting eye fatigue mainly focus on computer vision detect technology which can be very unreliable due to occasional bad visual conditions. As a solution, we proposed a wearable conformal in vivo eye fatigue monitoring sensor that contains an array of piezoelectric nanoribbons integrated on an ultrathin flexible substrate. By detecting strains on the skin of eyelid, the sensors may collect information about eye blinking, and, therefore, reveal human’s fatigue state. We first report the design and fabrication of the piezoelectric sensor and experimental characterization of voltage responses of the piezoelectric sensors. Under bending stress, the output voltage curves yield key information about the motion of human eyelid. We also develop a theoretical model to reveal the underlying mechanism of detecting eyelid motion. Both mechanical load test and in vivo test are conducted to convince the working performance of the sensors. With satisfied durability and high sensitivity, this sensor may efficiently detect abnormal eyelid motions, such as overlong closure, high blinking frequency, low closing speed and weak gazing strength, and may hopefully provide feedback for assessing eye fatigue in time so that unexpected situations can be prevented.

Pharmacology of the Nav1.1 domain IV voltage sensor reveals coupling between inactivation gating processes.

Science.gov (United States)

Osteen, Jeremiah D; Sampson, Kevin; Iyer, Vivek; Julius, David; Bosmans, Frank

2017-06-27

The Na v 1.1 voltage-gated sodium channel is a critical contributor to excitability in the brain, where pathological loss of function leads to such disorders as epilepsy, Alzheimer's disease, and autism. This voltage-gated sodium (Na v ) channel subtype also plays an important role in mechanical pain signaling by primary afferent somatosensory neurons. Therefore, pharmacologic modulation of Na v 1.1 represents a potential strategy for treating excitability disorders of the brain and periphery. Inactivation is a complex aspect of Na v channel gating and consists of fast and slow components, each of which may involve a contribution from one or more voltage-sensing domains. Here, we exploit the Hm1a spider toxin, a Na v 1.1-selective modulator, to better understand the relationship between these temporally distinct modes of inactivation and ask whether they can be distinguished pharmacologically. We show that Hm1a inhibits the gating movement of the domain IV voltage sensor (VSDIV), hindering both fast and slow inactivation and leading to an increase in Na v 1.1 availability during high-frequency stimulation. In contrast, ICA-121431, a small-molecule Na v 1.1 inhibitor, accelerates a subsequent VSDIV gating transition to accelerate entry into the slow inactivated state, resulting in use-dependent block. Further evidence for functional coupling between fast and slow inactivation is provided by a Na v 1.1 mutant in which fast inactivation removal has complex effects on slow inactivation. Taken together, our data substantiate the key role of VSDIV in Na v channel fast and slow inactivation and demonstrate that these gating processes are sequential and coupled through VSDIV. These findings provide insight into a pharmacophore on VSDIV through which modulation of inactivation gating can inhibit or facilitate Na v 1.1 function.

Novel Battery Management System with Distributed Wireless and Fiber Optic Sensors for Early Detection and Suppression of Thermal Runaway in Large Battery Packs, FY13 Q4 Report, ARPA-E Program: Advanced Management Protection of Energy Storage Devices (AMPE

Energy Technology Data Exchange (ETDEWEB)

Farmer, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Chang, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Zumstein, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Kovotsky, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Puglia, F. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Dobley, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Moore, G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Osswald, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Wolf, K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Kaschmitter, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Eaves, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2013-10-08

Technology has been developed that enables monitoring of individual cells in highcapacity lithium-ion battery packs, with a distributed array of wireless Bluetooth 4.0 tags and sensors, and without proliferation of extensive wiring harnesses. Given the safety challenges facing lithium-ion batteries in electric vehicle, civilian aviation and defense applications, these wireless sensors may be particularly important to these emerging markets. These wireless sensors will enhance the performance, reliability and safety of such energy storage systems. Specific accomplishments to date include, but are not limited to: (1) the development of wireless tags using Bluetooth 4.0 standard to monitor a large array of sensors in battery pack; (2) sensor suites enabling the simultaneous monitoring of cell voltage, cell current, cell temperature, and package strain, indicative of swelling and increased internal pressure, (3) small receivers compatible with USB ports on portable computers; (4) software drivers and logging software; (5) a 7S2P battery simulator, enabling the safe development of wireless BMS hardware in the laboratory; (6) demonstrated data transmission out of metal enclosures, including battery box, with small variable aperture opening; (7) test data demonstrating the accurate and reliable operation of sensors, with transmission of terminal voltage, cell temperature and package strain at distances up to 110 feet; (8) quantification of the data transmission error as a function of distance, in both indoor and outdoor operation; (9) electromagnetic interference testing during operation with live, high-capacity battery management system at Yardney Technical Products; (10) demonstrated operation with live high-capacity lithium-ion battery pack during charge-discharge cycling; (11) development of special polymer-gel lithium-ion batteries with embedded temperature sensors, capable of measuring the core temperature of individual of the cells during charge-discharge cycling

Improved detection of electrical activity with a voltage probe based on a voltage-sensing phosphatase.

Science.gov (United States)

Tsutsui, Hidekazu; Jinno, Yuka; Tomita, Akiko; Niino, Yusuke; Yamada, Yoshiyuki; Mikoshiba, Katsuhiko; Miyawaki, Atsushi; Okamura, Yasushi

2013-09-15

  One of the most awaited techniques in modern physiology is the sensitive detection of spatiotemporal electrical activity in a complex network of excitable cells. The use of genetically encoded voltage probes has been expected to enable such analysis. However, in spite of recent progress, existing probes still suffer from low signal amplitude and/or kinetics too slow to detect fast electrical activity. Here, we have developed an improved voltage probe named Mermaid2, which is based on the voltage-sensor domain of the voltage-sensing phosphatase from Ciona intestinalis and Förster energy transfer between a pair of fluorescent proteins. In mammalian cells, Mermaid2 permits ratiometric readouts of fractional changes of more than 50% over a physiologically relevant voltage range with fast kinetics, and it was used to follow a train of action potentials at frequencies of up to 150 Hz. Mermaid2 was also able to detect single action potentials and subthreshold voltage responses in hippocampal neurons in vitro, in addition to cortical electrical activity evoked by sound stimuli in single trials in living mice.

Tingkat Intensitas Cahaya Di Dalam Ruangan Dengan Menggunakan Sensor Ldr Berbasis Arduino Uno R-3

OpenAIRE

Siahaan, Haslena A.

2017-01-01

Has designed a measure of light intensity levels using LDR sensor. The working principle of a series of light sensors on sebenarya very simple. Voltage division between VR1 and LDR is at the core of the light above the sensor circuit. The increase in the voltage at VR1 will reduce the voltage falls on LDR, vice versa rise in LDR voltage will reduce the voltage drop on the VR1. Voltage division in accordance with the formula that applies a voltage divider in a series circuit, the voltage suppl...

Depolarization of the conductance-voltage relationship in the NaV1.5 mutant, E1784K, is due to altered fast inactivation

Science.gov (United States)

Yu, Alec; Zhu, Wandi; Silva, Jonathan R.; Ruben, Peter C.

2017-01-01

E1784K is the most common mixed long QT syndrome/Brugada syndrome mutant in the cardiac voltage-gated sodium channel NaV1.5. E1784K shifts the midpoint of the channel conductance-voltage relationship to more depolarized membrane potentials and accelerates the rate of channel fast inactivation. The depolarizing shift in the midpoint of the conductance curve in E1784K is exacerbated by low extracellular pH. We tested whether the E1784K mutant shifts the channel conductance curve to more depolarized membrane potentials by affecting the channel voltage-sensors. We measured ionic currents and gating currents at pH 7.4 and pH 6.0 in Xenopus laevis oocytes. Contrary to our expectation, the movement of gating charges is shifted to more hyperpolarized membrane potentials by E1784K. Voltage-clamp fluorimetry experiments show that this gating charge shift is due to the movement of the DIVS4 voltage-sensor being shifted to more hyperpolarized membrane potentials. Using a model and experiments on fast inactivation-deficient channels, we show that changes to the rate and voltage-dependence of fast inactivation are sufficient to shift the conductance curve in E1784K. Our results localize the effects of E1784K to DIVS4, and provide novel insight into the role of the DIV-VSD in regulating the voltage-dependencies of activation and fast inactivation. PMID:28898267

Depolarization of the conductance-voltage relationship in the NaV1.5 mutant, E1784K, is due to altered fast inactivation.

Directory of Open Access Journals (Sweden)

Colin H Peters

Full Text Available E1784K is the most common mixed long QT syndrome/Brugada syndrome mutant in the cardiac voltage-gated sodium channel NaV1.5. E1784K shifts the midpoint of the channel conductance-voltage relationship to more depolarized membrane potentials and accelerates the rate of channel fast inactivation. The depolarizing shift in the midpoint of the conductance curve in E1784K is exacerbated by low extracellular pH. We tested whether the E1784K mutant shifts the channel conductance curve to more depolarized membrane potentials by affecting the channel voltage-sensors. We measured ionic currents and gating currents at pH 7.4 and pH 6.0 in Xenopus laevis oocytes. Contrary to our expectation, the movement of gating charges is shifted to more hyperpolarized membrane potentials by E1784K. Voltage-clamp fluorimetry experiments show that this gating charge shift is due to the movement of the DIVS4 voltage-sensor being shifted to more hyperpolarized membrane potentials. Using a model and experiments on fast inactivation-deficient channels, we show that changes to the rate and voltage-dependence of fast inactivation are sufficient to shift the conductance curve in E1784K. Our results localize the effects of E1784K to DIVS4, and provide novel insight into the role of the DIV-VSD in regulating the voltage-dependencies of activation and fast inactivation.

S Sensors: Fumarate-Based fcu-MOF Thin Film Grown on a Capacitive Interdigitated Electrode

KAUST Repository

Yassine, Omar

2016-10-31

Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H2S) at room temperature, using thin films of rare-earth metal (RE)-based metal-organic framework (MOF) with underlying fcu topology. This unique MOF-based sensor is made via the insitu growth of fumarate-based fcu-MOF (fum-fcu-MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H2S at concentrations down to 100ppb, with the lower detection limit around 5ppb. The fum-fcu-MOF sensor exhibits a highly desirable detection selectivity towards H2S vs. CH4, NO2, H2, and C7H8 as well as an outstanding H2S sensing stability as compared to other reported MOFs. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Voltage-gated calcium flux mediates Escherichia coli mechanosensation.

Science.gov (United States)

Bruni, Giancarlo N; Weekley, R Andrew; Dodd, Benjamin J T; Kralj, Joel M

2017-08-29

Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli , including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings.

System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

Science.gov (United States)

Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

1993-01-01

A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

In-situ Monitoring of Internal Local Temperature and Voltage of Proton Exchange Membrane Fuel Cells

Directory of Open Access Journals (Sweden)

Chi-Yuan Lee

2010-06-01

Full Text Available The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC that are based on micro-electro-mechanical systems (MEMS. The power density at 0.5 V without a sensor is 450 mW/cm2, and that with a sensor is 426 mW/cm2. Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

Electrical properties of FeGa2S4

International Nuclear Information System (INIS)

Niftiev, N.N.; Alidzhanov, M.A.; Tagiev, O.B.; Mamedov, F.M.

2004-01-01

Temperature dependence of the electrical conductivity and current-voltage characteristics (CVCs) of FeGa 2 S 4 crystals have been studied. It has been shown that the current in the nonlinear range of CVCs is caused by the field effect. The activation energy of carriers and the trap concentrations have been determined

Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator.

Science.gov (United States)

Jung, Arong; Rajakumar, Dhanarajan; Yoon, Bong-June; Baker, Bradley J

2017-10-01

Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously been shown to affect the voltage range of the optical signal. Introduction of polar amino acids at this position reduced the voltage-dependent optical signal of the GEVI. Negatively charged amino acids slightly reduced the optical signal by 33 percent while positively charge amino acids at this position reduced the optical signal by 80%. Surprisingly, the range of V220D was similar to that of V220K with shifted optical responses towards negative potentials. In contrast, the V220E mutant mirrored the responses of the V220R mutation suggesting that the length of the side chain plays in role in determining the voltage range of the GEVI. Charged mutations at the 219 position all behaved similarly slightly shifting the optical response to more negative potentials. Charged mutations to the 221 position behaved erratically suggesting interactions with the plasma membrane and/or other amino acids in the VSD. Introduction of bulky amino acids at the V220 position increased the range of the optical response to include hyperpolarizing signals. Combining The V220W mutant with the R217Q mutation resulted in a probe that reduced the depolarizing signal and enhanced the hyperpolarizing signal which may lead to GEVIs that only report neuronal inhibition.

Design considerations for TES and QET sensors

International Nuclear Information System (INIS)

Cabrera, B.

2000-01-01

We summarize some of the effects that must be taken into account in the design of superconducting Transition Edge Sensors (TES) and Quasiparticle-trap-assisted Electrothermal-feedback Transition-edge-sensors (QET). For the TES these include determining time constants, maintaining voltage bias, avoid electrothermal oscillations, critical current limitations, and saturation. For QET phonon sensors, voltage bias was conceived to allow the simultaneous biasing of parallel TESs with different transition temperatures, and preventing normal-superconducting phase separation

Preparation and characterization of the titanium dioxide thin films used for pH electrode and procaine drug sensor by sol-gel method

International Nuclear Information System (INIS)

Liao Yihung; Chou, J.-C.

2009-01-01

We used titanium dioxide (TiO 2 ) as the sensing layer of an ion selective pH sensor electrode, and as the substrate for a procaine drug sensitive membrane sensor. The TiO 2 thin films were prepared using sol-gel spin coating technology. We adopted the Ti(OC 4 H 9 ) 4 as the precursor, and added an ethanol solute to obtain the TiO 2 sol. The sol-gel was spun coated onto the indium tin oxide (ITO) substrate. The drug sensitive membrane was coated on the TiO 2 film. We then measured the I DS -V G curves of the TiO 2 ion selective electrode (ISE) pH sensor in pH buffer solutions that had different pH concentrations using a Keithley 236 Semiconductor Parameter Analyzer instrument. The procaine concentration was measured from 10 -2 M to 10 -6 M with the drug sensitive membrane using a HP 34401A Digital Multimeter. We prepared the TiO 2 ISE pH sensor and obtained a high pH sensitivity of 58.73 mV/pH. Uniform TiO 2 films surface structures, with an average roughness (Ra) of 10.211 nm and root mean square roughness (Rms) of 13.01 nm were obtained. The drift effect of the titanium dioxide ion selective pH sensor electrode is 1.97 mV h -1 . The sensitivity of the procaine drug sensor is 55.03 mV pC -1 between 1.0 x 10 -2 mol L -1 and 1.0 x 10 -6 mol L -1 procaine concentrations. The detection limit is 5.0 x 10 -6 mol L -1 . The response time to reach 90% output voltage is 16 s. Forty seconds are required to reach 95% output voltage. The procaine drug sensor 1 x 10 -3 mol L -1 drift test is 3.64 mV h -1 and the variation in output voltage of the repeated measurement is less than 7.4 mV

0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems.

Science.gov (United States)

Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

2015-08-28

This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics.

Sensors based on mesoporous SnO{sub 2}-CuWO{sub 4} with high selective sensitivity to H{sub 2}S at low operating temperature

Energy Technology Data Exchange (ETDEWEB)

Stanoiu, Adelina; Simion, Cristian E. [National Institute of Materials Physics, Atomistilor 405A, P.O. Box MG-7, 077125 Bucharest, Măgurele (Romania); Calderon-Moreno, Jose Maria; Osiceanu, Petre [“Ilie Murgulescu” Institute of Physical Chemistry, Romanian Academy, Surface Chemistry and Catalysis Laboratory, Spl. Independentei 202, 060021, Bucharest (Romania); Florea, Mihaela [University of Bucharest, Faculty of Chemistry, Department of Organic Chemistry, Biochemistry and Catalysis, B-dul Regina Elisabeta 4-12, Bucharest (Romania); National Institute of Materials Physics, Atomistilor 405A, P.O. Box MG-7, 077125 Bucharest, Măgurele (Romania); Teodorescu, Valentin S. [National Institute of Materials Physics, Atomistilor 405A, P.O. Box MG-7, 077125 Bucharest, Măgurele (Romania); Somacescu, Simona, E-mail: somacescu.simona@gmail.com [“Ilie Murgulescu” Institute of Physical Chemistry, Romanian Academy, Surface Chemistry and Catalysis Laboratory, Spl. Independentei 202, 060021, Bucharest (Romania)

2017-06-05

Highlights: • Mesoporous SnO{sub 2}-CuWO{sub 4} obtained by an inexpensive synthesis route. • Powders characterization performed by a variety of complementary techniques. • SnO{sub 2}-CuWO{sub 4} layers with high selective sensitivity to H{sub 2}S. • Low operating temperature and relative humidity influences. - Abstract: Development of new sensitive materials by different synthesis routes in order to emphasize the sensing properties for hazardous H{sub 2}S detection is one of a nowadays challenge in the field of gas sensors. In this study we obtained mesoporous SnO{sub 2}-CuWO{sub 4} with selective sensitivity to H{sub 2}S by an inexpensive synthesis route with low environmental pollution level, using tripropylamine (TPA) as template and polyvinylpyrrolidone (PVP) as dispersant/stabilizer. In order to bring insights about the intrinsic properties, the powders were characterized by means of a variety of complementary techniques such as: X-Ray Diffraction, XRD; Transmission Electron Microscopy, TEM; High Resolution TEM, HRTEM; Raman Spectroscopy, RS; Porosity Analysis by N{sub 2} adsorption/desorption, BET; Scanning Electron Microscopy, SEM and X-ray Photoelectron Spectroscopy, XPS. The sensors were fabricated by powders deposition via screen-printing technique onto planar commercial Al{sub 2}O{sub 3} substrates. The sensor signals towards H{sub 2}S exposure at low operating temperature (100 °C) reaches values from 10{sup 5} (for SnWCu600) to 10{sup 6} (for SnWCu800) over the full range of concentrations (5–30 ppm). The recovery processes were induced by a short temperature trigger of 500 °C. The selective sensitivity was underlined with respect to the H{sub 2}S, relative to other potential pollutants and relative humidity (10–70% RH).

Elevated voltage level I{sub DDQ} failure testing of integrated circuits

Science.gov (United States)

Righter, A.W.

1996-05-21

Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

Vertically stacked nanocellulose tactile sensor.

Science.gov (United States)

Jung, Minhyun; Kim, Kyungkwan; Kim, Bumjin; Lee, Kwang-Jae; Kang, Jae-Wook; Jeon, Sanghun

2017-11-16

Paper-based electronic devices are attracting considerable attention, because the paper platform has unique attributes such as flexibility and eco-friendliness. Here we report on what is claimed to be the firstly fully integrated vertically-stacked nanocellulose-based tactile sensor, which is capable of simultaneously sensing temperature and pressure. The pressure and temperature sensors are operated using different principles and are stacked vertically, thereby minimizing the interference effect. For the pressure sensor, which utilizes the piezoresistance principle under pressure, the conducting electrode was inkjet printed on the TEMPO-oxidized-nanocellulose patterned with micro-sized pyramids, and the counter electrode was placed on the nanocellulose film. The pressure sensor has a high sensitivity over a wide range (500 Pa-3 kPa) and a high durability of 10 4 loading/unloading cycles. The temperature sensor combines various materials such as poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), silver nanoparticles (AgNPs) and carbon nanotubes (CNTs) to form a thermocouple on the upper nanocellulose layer. The thermoelectric-based temperature sensors generate a thermoelectric voltage output of 1.7 mV for a temperature difference of 125 K. Our 5 × 5 tactile sensor arrays show a fast response, negligible interference, and durable sensing performance.

Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

Science.gov (United States)

Xin, Encheng; Ju, Yong; Yuan, Haiwen

2016-10-20

A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

Hydrophobic interaction between contiguous residues in the S6 transmembrane segment acts as a stimuli integration node in the BK channel

Science.gov (United States)

Carrasquel-Ursulaez, Willy; Contreras, Gustavo F.; Sepúlveda, Romina V.; Aguayo, Daniel; González-Nilo, Fernando

2015-01-01

Large-conductance Ca2+- and voltage-activated K+ channel (BK) open probability is enhanced by depolarization, increasing Ca2+ concentration, or both. These stimuli activate modular voltage and Ca2+ sensors that are allosterically coupled to channel gating. Here, we report a point mutation of a phenylalanine (F380A) in the S6 transmembrane helix that, in the absence of internal Ca2+, profoundly hinders channel opening while showing only minor effects on the voltage sensor active–resting equilibrium. Interpretation of these results using an allosteric model suggests that the F380A mutation greatly increases the free energy difference between open and closed states and uncouples Ca2+ binding from voltage sensor activation and voltage sensor activation from channel opening. However, the presence of a bulky and more hydrophobic amino acid in the F380 position (F380W) increases the intrinsic open–closed equilibrium, weakening the coupling between both sensors with the pore domain. Based on these functional experiments and molecular dynamics simulations, we propose that F380 interacts with another S6 hydrophobic residue (L377) in contiguous subunits. This pair forms a hydrophobic ring important in determining the open–closed equilibrium and, like an integration node, participates in the communication between sensors and between the sensors and pore. Moreover, because of its effects on open probabilities, the F380A mutant can be used for detailed voltage sensor experiments in the presence of permeant cations. PMID:25548136

Structural refinement of the hERG1 pore and voltage-sensing domains with ROSETTA-membrane and molecular dynamics simulations.

Science.gov (United States)

Subbotina, Julia; Yarov-Yarovoy, Vladimir; Lees-Miller, James; Durdagi, Serdar; Guo, Jiqing; Duff, Henry J; Noskov, Sergei Yu

2010-11-01

The hERG1 gene (Kv11.1) encodes a voltage-gated potassium channel. Mutations in this gene lead to one form of the Long QT Syndrome (LQTS) in humans. Promiscuous binding of drugs to hERG1 is known to alter the structure/function of the channel leading to an acquired form of the LQTS. Expectably, creation and validation of reliable 3D model of the channel have been a key target in molecular cardiology and pharmacology for the last decade. Although many models were built, they all were limited to pore domain. In this work, a full model of the hERG1 channel is developed which includes all transmembrane segments. We tested a template-driven de-novo design with ROSETTA-membrane modeling using side-chain placements optimized by subsequent molecular dynamics (MD) simulations. Although backbone templates for the homology modeled parts of the pore and voltage sensors were based on the available structures of KvAP, Kv1.2 and Kv1.2-Kv2.1 chimera channels, the missing parts are modeled de-novo. The impact of several alignments on the structure of the S4 helix in the voltage-sensing domain was also tested. Herein, final models are evaluated for consistency to the reported structural elements discovered mainly on the basis of mutagenesis and electrophysiology. These structural elements include salt bridges and close contacts in the voltage-sensor domain; and the topology of the extracellular S5-pore linker compared with that established by toxin foot-printing and nuclear magnetic resonance studies. Implications of the refined hERG1 model to binding of blockers and channels activators (potent new ligands for channel activations) are discussed. © 2010 Wiley-Liss, Inc.

A thermal sensor for water using self-heated NTC thick-film segmented thermistors

OpenAIRE

Nikolić, Maria Vesna; Radojčić, B. M.; Aleksić, Obrad; Luković, Miloljub D.; Nikolić, Pantelija

2011-01-01

A simple thermal (heat loss) sensor system was designed in a small plastic tube housing using a negative thermal coefficient (NTC) thick-film thermistor as a self-heating sensor. The voltage power supply [range constant voltage (RCV)-range constant voltage] uses the measured input water temperature to select the applied voltage in steps (up and down) in order to enable operation of the sensor at optimal sensitivity for different water temperatures. The input water temperature was measured usi...

A CMOS Humidity Sensor for Passive RFID Sensing Applications

Directory of Open Access Journals (Sweden)

Fangming Deng

2014-05-01

Full Text Available This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

A CMOS Humidity Sensor for Passive RFID Sensing Applications

Science.gov (United States)

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-01-01

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

A CMOS humidity sensor for passive RFID sensing applications.

Science.gov (United States)

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-05-16

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

Neural network-based sensor signal accelerator.

Energy Technology Data Exchange (ETDEWEB)

Vogt, M. C.

2000-10-16

A strategy has been developed to computationally accelerate the response time of a generic electronic sensor. The strategy can be deployed as an algorithm in a control system or as a physical interface (on an embedded microcontroller) between a slower responding external sensor and a higher-speed control system. Optional code implementations are available to adjust algorithm performance when computational capability is limited. In one option, the actual sensor signal can be sampled at the slower rate with adaptive linear neural networks predicting the sensor's future output and interpolating intermediate synthetic output values. In another option, a synchronized collection of predictors sequentially controls the corresponding synthetic output voltage. Error is adaptively corrected in both options. The core strategy has been demonstrated with automotive oxygen sensor data. A prototype interface device is under construction. The response speed increase afforded by this strategy could greatly offset the cost of developing a replacement sensor with a faster physical response time.

Control of a Two-Stage Direct Power Converter with a Single Voltage Sensor Mounted in the Intermediary Circuit

DEFF Research Database (Denmark)

Klumpner, Christian; Wheeler, P.; Blaabjerg, Frede

2004-01-01

Controlling a converter requires not only a powerful processors but also accurate voltage and current sensors and fast and precise analogue-digital converters, which increase the cost per kW of the assembly, especially in the low power range. A matrix converter requires less transducers than a back...... converters but in two stages (AC/DC/AC) without using energy storage in the intermediary circuit. They also offer the possibility to reduce the number of switches compared to the standard single-stage matrix converter. This paper presents a new method to control a two-stage DPC providing sine-wave in sine...

Sensor Exposure, Exploitation, and Experimentation Environment (SE4)

Science.gov (United States)

Buell, D.; Duff, F.; Goding, J.; Bankston, M.; McLaughlin, T.; Six, S.; Taylor, S.; Wootton, S.

2011-09-01

As the resident space object population increases from new launches and events such as the COSMOS/IRIDIUM collision, the maintenance of high-level Space Situational Awareness (SSA) has become increasingly difficult. To maintain situational awareness of the changing environment, new systems and methods must be developed. The Sensor Exposure, Exploitation and Experimentation Environment (SE4) provides a platform to illustrate “The Art of the Possible” that shows the potential benefit of enriched sensor data collections and real-time data sharing. Through modeling and simulation, and a net-centric architecture, SE4 shows the added value of sharing data in real-time and exposing new types of sensor data. The objective of SE4 is to develop an experimentation and innovation environment for sensor data exposure, composable sensor capabilities, reuse, and exploitation that accelerates the delivery of needed Command and Control, Intelligence, Surveillance, and Reconnaissance capabilities to the warfighter. Through modeling, simulation and rapid prototyping, the art of the possible for a fully-connected, net-centric space Command and Control (C2) and sensor enterprise can be demonstrated. This paper provides results that demonstrate the potential for faster cataloging of breakup events and additional event monitoring that are possible with data available today in the Space Surveillance Network (SSN). Demonstrating the art of the possible for the enterprise will guide net-centric requirements definition and facilitate discussions with stakeholder organizations on the Concept of Operations (CONOPS), policy, and Tactics, Techniques, and Procedures (TTP) evolution necessary to take full advantage of net-centric operations. SE4 aligns with direction from Secretary Gates and the Chairman Joint Chief of Staff that emphasizes the need to get the most out of our existing systems. Continuing to utilize SE4 will enable the enterprise by demonstrating the benefits of applying

SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

DEFF Research Database (Denmark)

Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

Action Potential Dynamics in Fine Axons Probed with an Axonally Targeted Optical Voltage Sensor.

Science.gov (United States)

Ma, Yihe; Bayguinov, Peter O; Jackson, Meyer B

2017-01-01

The complex and malleable conduction properties of axons determine how action potentials propagate through extensive axonal arbors to reach synaptic terminals. The excitability of axonal membranes plays a major role in neural circuit function, but because most axons are too thin for conventional electrical recording, their properties remain largely unexplored. To overcome this obstacle, we used a genetically encoded hybrid voltage sensor (hVOS) harboring an axonal targeting motif. Expressing this probe in transgenic mice enabled us to monitor voltage changes optically in two populations of axons in hippocampal slices, the large axons of dentate granule cells (mossy fibers) in the stratum lucidum of the CA3 region and the much finer axons of hilar mossy cells in the inner molecular layer of the dentate gyrus. Action potentials propagated with distinct velocities in each type of axon. Repetitive firing broadened action potentials in both populations, but at an intermediate frequency the degree of broadening differed. Repetitive firing also attenuated action potential amplitudes in both mossy cell and granule cell axons. These results indicate that the features of use-dependent action potential broadening, and possible failure, observed previously in large nerve terminals also appear in much finer unmyelinated axons. Subtle differences in the frequency dependences could influence the propagation of activity through different pathways to excite different populations of neurons. The axonally targeted hVOS probe used here opens up the diverse repertoire of neuronal processes to detailed biophysical study.

Expression of the voltage-sensing phosphatase gene in the chick embryonic tissues and in the adult cerebellum.

Science.gov (United States)

Yamaguchi, Shinji; Aoki, Naoya; Kitajima, Takaaki; Okamura, Yasushi; Homma, Koichi J

2014-10-01

Voltage-sensing phosphatase (VSP) consists of a transmembrane voltage sensor domain (VSD) and the cytoplasmic domain with phosphoinositide-phosphatase activities. It operates as the voltage sensor and directly translates membrane potential into phosphoinositide turnover by coupling VSD to the cytoplasmic domain. VSPs are evolutionarily conserved from marine invertebrate up to humans. Recently, we demonstrated that ectopic expression of the chick ortholog of VSP, Gg-VSP, in a fibroblast cell line caused characteristic cell process outgrowths. Co-expression of chick PTEN suppressed such morphological change, suggesting that VSP regulates cell shape by increasing PI(3,4)P2. However, the in vivo function of Gg-VSP remains unclear. Here, we showed that in chick embryos Gg-VSP is expressed in the stomach, mesonephros, pharyngeal arch, limb bud, somites, floor plate of neural tube, and notochord. In addition, both Gg-VSP transcripts and the protein were found in the cerebellar Purkinje neurons. These findings provide an insight into the physiological functions of VSP.

Hybrid optical-fibre/geopolymer sensors for structural health monitoring of concrete structures

Science.gov (United States)

Perry, M.; Saafi, M.; Fusiek, G.; Niewczas, P.

2015-04-01

In this work, we demonstrate hybrid optical-fibre/geopolymer sensors for monitoring temperature, uniaxial strain and biaxial strain in concrete structures. The hybrid sensors detect these measurands via changes in geopolymer electrical impedance, and via optical wavelength measurements of embedded fibre Bragg gratings. Electrical and optical measurements were both facilitated by metal-coated optical fibres, which provided the hybrid sensors with a single, shared physical path for both voltage and wavelength signals. The embedded fibre sensors revealed that geopolymer specimens undergo 2.7 mɛ of shrinkage after one week of curing at 42 °C. After curing, an axial 2 mɛ compression of the uniaxial hybrid sensor led to impedance and wavelength shifts of 7 × 10-2 and -2 × 10-4 respectively. The typical strain resolution in the uniaxial sensor was 100 μ \\varepsilon . The biaxial sensor was applied to the side of a concrete cylinder, which was then placed under 0.6 mɛ of axial, compressive strain. Fractional shifts in impedance and wavelength, used to monitor axial and circumferential strain, were 3 × 10-2 and 4 × 10-5 respectively. The biaxial sensor’s strain resolution was approximately 10 μ \\varepsilon in both directions. Due to several design flaws, the uniaxial hybrid sensor was unable to accurately measure ambient temperature changes. The biaxial sensor, however, successfully monitored local temperature changes with 0.5 °C resolution.

The effect of activation rate on left atrial bipolar voltage in patients with paroxysmal atrial fibrillation.

Science.gov (United States)

Williams, Steven E; Linton, Nick; O'Neill, Louisa; Harrison, James; Whitaker, John; Mukherjee, Rahul; Rinaldi, Christopher A; Gill, Jaswinder; Niederer, Steven; Wright, Matthew; O'Neill, Mark

2017-09-01

Bipolar voltage is used during electroanatomic mapping to define abnormal myocardium, but the effect of activation rate on bipolar voltage is not known. We hypothesized that bipolar voltage may change in response to activation rate. By examining corresponding unipolar signals we sought to determine the mechanisms of such changes. LA extrastimulus mapping was performed during CS pacing in 10 patients undergoing first time paroxysmal atrial fibrillation ablation. Bipolar and unipolar electrograms were recorded using a PentaRay catheter (4-4-4 spacing) and indifferent IVC electrode, respectively. An S1S2 pacing protocol was delivered with extrastimulus coupling interval reducing from 350 to 200 milliseconds. At each recording site (119 ± 37 per LA), bipolar peak-to-peak voltage, unipolar peak to peak voltage and activation delay between unipole pairs was measured. Four patterns of bipolar voltage/extrastimulus coupling interval curves were seen: voltage attenuation with plateau voltage >1 mV (48 ± 15%) or voltage unaffected by coupling interval with plateau voltage >1 mV (17 ± 10%) or voltage attenuation were associated with significantly greater unipolar voltage attenuation at low (25 ± 28 mV/s vs. 9 ± 11 mV/s) and high (23 ± 29 mV/s vs. 6 ± 12 mV/s) plateau voltage sites (P voltage attenuation (P = 0.026). Bipolar electrogram voltage is dependent on activation rate at a significant proportion of sites. Changes in unipolar voltage and timing underlie these effects. These observations have important implications for use of voltage mapping to delineate abnormal atrial substrate. © 2017 The Authors. Journal of Cardiovascular Electrophysiology published by Wiley Periodicals, Inc.

A Power-Frequency Electric Field Sensor for Portable Measurement.

Science.gov (United States)

Xiao, Dongping; Ma, Qichao; Xie, Yutong; Zheng, Qi; Zhang, Zhanlong

2018-03-31

In this paper, a new type of electric field sensor is proposed for the health and safety protection of inspection staff in high-voltage environments. Compared with the traditional power frequency electric field measurement instruments, the portable instrument has some special performance requirements and, thus, a new kind of double spherical shell sensor is presented. First, the mathematical relationships between the induced voltage of the sensor, the output voltage of the measurement circuit, and the original electric field in free space are deduced theoretically. These equations show the principle of the proposed sensor to measure the electric field and the effect factors of the measurement. Next, the characteristics of the sensor are analyzed through simulation. The simulation results are in good agreement with the theoretical analysis. The influencing rules of the size and material of the sensor on the measurement results are summarized. Then, the proposed sensor and the matching measurement system are used in a physical experiment. After calibration, the error of the measurement system is discussed. Lastly, the directional characteristic of the proposed sensor is experimentally tested.

New C4D Sensor with a Simulated Inductor

Directory of Open Access Journals (Sweden)

Yingchao Lyu

2016-01-01

Full Text Available A new capacitively coupled contactless conductivity detection (C4D sensor with an improved simulated inductor is developed in this work. The improved simulated inductor is designed on the basis of the Riordan-type floating simulated inductor. With the improved simulated inductor, the negative influence of the coupling capacitances is overcome and the conductivity measurement is implemented by the series resonance principle. The conductivity measurement experiments are carried out in three pipes with different inner diameters of 3.0 mm, 4.6 mm and 6.4 mm, respectively. The experimental results show that the designs of the new C4D sensor and the improved simulated inductor are successful. The maximum relative error of the conductivity measurement is less than 5%. Compared with the C4D sensors using practical inductors, the measurement accuracy of the new C4D sensor is comparable. The research results also indicate that the adjustability of a simulated inductor can reduce the requirement for the AC source and guarantee the interchangeableness. Meanwhile, it is recommended that making the potential of one terminal of a simulated inductor stable is beneficial to the running stability. Furthermore, this work indirectly verifies the possibility and feasibility of the miniaturization of the C4D sensor by using the simulated inductor technique and lays a good foundation for future research work.

A probe station for testing silicon sensors

CERN Multimedia

Ulysse, Fichet

2017-01-01

A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

Second and third generation voltage-sensitive fluorescent proteins for monitoring membrane potential

Directory of Open Access Journals (Sweden)

Amelie Perron

2009-06-01

Full Text Available Over the last decade, optical neuroimaging methods have been enriched by engineered biosensors derived from fluorescent protein (FP reporters fused to protein detectors that convert physiological signals into changes of intrinsic FP fluorescence. These FP-based indicators are genetically encoded, and hence targetable to specific cell populations within networks of heterologous cell types. Among this class of biosensors, the development of optical probes for membrane potential is both highly desirable and challenging. A suitable FP voltage sensor would indeed be a valuable tool for monitoring the activity of thousands of individual neurons simultaneously in a non-invasive manner. Previous prototypic genetically-encoded FP voltage indicators achieved a proof of principle but also highlighted several difficulties such as poor cell surface targeting and slow kinetics. Recently, we developed a new series of FRET-based Voltage-Sensitive Fluorescent Proteins (VSFPs, referred to as VSFP2s, with efficient targeting to the plasma membrane and high responsiveness to membrane potential signaling in excitable cells. In addition to these FRET-based voltage sensors, we also generated a third series of probes consisting of single FPs with response kinetics suitable for the optical imaging of fast neuronal signals. These newly available genetically-encoded reporters for membrane potential will be instrumental for future experimental approaches directed toward the understanding of neuronal network dynamics and information processing in the brain. Here, we review the development and current status of these novel fluorescent probes.

A Novel High-Sensitivity, Low-Power, Liquid Crystal Temperature Sensor

Directory of Open Access Journals (Sweden)

José Francisco Algorri

2014-04-01

Full Text Available A novel temperature sensor based on nematic liquid crystal permittivity as a sensing magnitude, is presented. This sensor consists of a specific micrometric structure that gives considerable advantages from other previous related liquid crystal (LC sensors. The analytical study reveals that permittivity change with temperature is introduced in a hyperbolic cosine function, increasing the sensitivity term considerably. The experimental data has been obtained for ranges from −6 °C to 100 °C. Despite this, following the LC datasheet, theoretical ranges from −40 °C to 109 °C could be achieved. These results have revealed maximum sensitivities of 33 mVrms/°C for certain temperature ranges; three times more than of most silicon temperature sensors. As it was predicted by the analytical study, the micrometric size of the proposed structure produces a high output voltage. Moreover the voltage’s sensitivity to temperature response can be controlled by the applied voltage. This response allows temperature measurements to be carried out without any amplification or conditioning circuitry, with very low power consumption.

The orientation and molecular movement of a k(+) channel voltage-sensing domain.

Science.gov (United States)

Gandhi, Chris S; Clark, Eliana; Loots, Eli; Pralle, Arnd; Isacoff, Ehud Y

2003-10-30

Voltage-gated channels operate through the action of a voltage-sensing domain (membrane segments S1-S4) that controls the conformation of gates located in the pore domain (membrane segments S5-S6). Recent structural studies on the bacterial K(v)AP potassium channel have led to a new model of voltage sensing in which S4 lies in the lipid at the channel periphery and moves through the membrane as a unit with a portion of S3. Here we describe accessibility probing and disulfide scanning experiments aimed at determining how well the K(v)AP model describes the Drosophila Shaker potassium channel. We find that the S1-S3 helices have one end that is externally exposed, S3 does not undergo a transmembrane motion, and S4 lies in close apposition to the pore domain in the resting and activated state.

Charge immobilization of the voltage sensor in domain IV is independent of sodium current inactivation.

Science.gov (United States)

Sheets, Michael F; Hanck, Dorothy A

2005-02-15

Recovery from fast inactivation in voltage-dependent Na+ channels is associated with a slow component in the time course of gating charge during repolarization (i.e. charge immobilization), which results from the slow movement of the S4 segments in domains III and IV (S4-DIII and S4-DIV). Previous studies have shown that the non-specific removal of fast inactivation by the proteolytic enzyme pronase eliminated charge immobilization, while the specific removal of fast inactivation (by intracellular MTSET modification of a cysteine substituted for the phenylalanine in the IFM motif, ICMMTSET, in the inactivation particle formed by the linker between domains III and IV) only reduced the amount of charge immobilization by nearly one-half. To investigate the molecular origin of the remaining slow component of charge immobilization we studied the human cardiac Na+ channel (hH1a) in which the outermost arginine in the S4-DIV, which contributes approximately 20% to total gating charge (Qmax), was mutated to a cysteine (R1C-DIV). Gating charge could be fully restored in R1C-DIV by exposure to extracellular MTSEA, a positively charged methanethiosulphonate reagent. The RIC-DIV mutation was combined with ICMMTSET to remove fast inactivation, and the gating currents of R1C-DIV-ICM(MTSET) were recorded before and after modification with MTSEAo. Prior to MTSEAo, the time course of the gating charge during repolarization (off-charge) was best described by a single fast time constant. After MTSEA, the off-charge had both fast and slow components, with the slow component accounting for nearly 35% of Qmax. These results demonstrate that the slow movement of the S4-DIV during repolarization is not dependent upon the normal binding of the inactivation particle.

Substitutions in the domain III voltage-sensing module enhance the sensitivity of an insect sodium channel to a scorpion beta-toxin.

Science.gov (United States)

Song, Weizhong; Du, Yuzhe; Liu, Zhiqi; Luo, Ningguang; Turkov, Michael; Gordon, Dalia; Gurevitz, Michael; Goldin, Alan L; Dong, Ke

2011-05-06

Scorpion β-toxins bind to the extracellular regions of the voltage-sensing module of domain II and to the pore module of domain III in voltage-gated sodium channels and enhance channel activation by trapping and stabilizing the voltage sensor of domain II in its activated state. We investigated the interaction of a highly potent insect-selective scorpion depressant β-toxin, Lqh-dprIT(3), from Leiurus quinquestriatus hebraeus with insect sodium channels from Blattella germanica (BgNa(v)). Like other scorpion β-toxins, Lqh-dprIT(3) shifts the voltage dependence of activation of BgNa(v) channels expressed in Xenopus oocytes to more negative membrane potentials but only after strong depolarizing prepulses. Notably, among 10 BgNa(v) splice variants tested for their sensitivity to the toxin, only BgNa(v)1-1 was hypersensitive due to an L1285P substitution in IIIS1 resulting from a U-to-C RNA-editing event. Furthermore, charge reversal of a negatively charged residue (E1290K) at the extracellular end of IIIS1 and the two innermost positively charged residues (R4E and R5E) in IIIS4 also increased the channel sensitivity to Lqh-dprIT(3). Besides enhancement of toxin sensitivity, the R4E substitution caused an additional 20-mV negative shift in the voltage dependence of activation of toxin-modified channels, inducing a unique toxin-modified state. Our findings provide the first direct evidence for the involvement of the domain III voltage-sensing module in the action of scorpion β-toxins. This hypersensitivity most likely reflects an increase in IIS4 trapping via allosteric mechanisms, suggesting coupling between the voltage sensors in neighboring domains during channel activation.

Dark Current And Voltage Measurements Of Metal-Organic-Semiconductor (M-Or-S) Diode

International Nuclear Information System (INIS)

Adianto

1996-01-01

. Some Metal-Organic-Semiconductor (M-Or-S) thin film diodes, constructed with an organic polymer (polymerized toluene) as an active component has been successfully fabricated. The thin film M-Or-S diodes were fabricated on an n-type silicon with resistivity of 250-500 Ocm and p type silicon with resistivity of 10-20 Ocm as a substrate with polymerized toluene used as insulator. When deposited on silicon wafers with electrode of evaporated Ni on the n-type silicon and evaporated Au as the electrode on the polymerized toluene film, the electronic devices of Metal-Organic- Semiconductor (M-Or-S) type can be produced with one of its characteristics is that their light sensitivity. A plasma ion deposition system was constructed and used to deposit organic monomeric substance (toluene) that functioned as an isolator between semiconductor and the evaporated metal electrodes. The current-voltage measurements for different configurations of M-Or-S devices were carried out to determine the current-voltage (1-V) characteristics for M-Or-S devices with different materials and thicknesses. In addition to the 1-V measurement mentioned before, 1-V measurements of the devices were also carried out by using a curve tracer oscilloscope, and the picture of the effective parameters of each of the device could be taken by using a polaroid camera. Since the devices are very sensitive to light, the devices were all tested in a black-box which was covered by a black cloth to make sure that there was no light coming through. The experimental results for p- and n-type silicon substrates showed that an M-Or-S diode with n-type gave a higher breakdown voltage than that p- type silicon. In addition, the reverse bias breakdown voltage increased as the thickness of the thin film increased in the range of 50 -2500 V/μm

A novel MR-compatible sensor to assess active medical device safety: stimulation monitoring, rectified radio frequency pulses, and gradient-induced voltage measurements.

Science.gov (United States)

Barbier, Thérèse; Aissani, Sarra; Weber, Nicolas; Pasquier, Cédric; Felblinger, Jacques

2018-03-30

To evaluate the function of an active implantable medical device (AIMD) during magnetic resonance imaging (MRI) scans. The induced voltages caused by the switching of magnetic field gradients and rectified radio frequency (RF) pulse were measured, along with the AIMD stimulations. An MRI-compatible voltage probe with a bandwidth of 0-40 kHz was designed. Measurements were carried out both on the bench with an overvoltage protection circuit commonly used for AIMD and with a pacemaker during MRI scans on a 1.5 T (64 MHz) MR scanner. The sensor exhibits a measurement range of ± 15 V with an amplitude resolution of 7 mV and a temporal resolution of 10 µs. Rectification was measured on the bench with the overvoltage protection circuit. Linear proportionality was confirmed between the induced voltage and the magnetic field gradient slew rate. The pacemaker pacing was recorded successfully during MRI scans. The characteristics of this low-frequency voltage probe allow its use with extreme RF transmission power and magnetic field gradient positioning for MR safety test of AIMD during MRI scans.

Bromodomain-containing Protein 4 Activates Voltage-gated Sodium Channel 1.7 Transcription in Dorsal Root Ganglia Neurons to Mediate Thermal Hyperalgesia in Rats.

Science.gov (United States)

Hsieh, Ming-Chun; Ho, Yu-Cheng; Lai, Cheng-Yuan; Wang, Hsueh-Hsiao; Lee, An-Sheng; Cheng, Jen-Kun; Chau, Yat-Pang; Peng, Hsien-Yu

2017-11-01

Bromodomain-containing protein 4 binds acetylated promoter histones and promotes transcription; however, the role of bromodomain-containing protein 4 in inflammatory hyperalgesia remains unclear. Male Sprague-Dawley rats received hind paw injections of complete Freund's adjuvant to induce hyperalgesia. The dorsal root ganglia were examined to detect changes in bromodomain-containing protein 4 expression and the activation of genes involved in the expression of voltage-gated sodium channel 1.7, which is a key pain-related ion channel. The intraplantar complete Freund's adjuvant injections resulted in thermal hyperalgesia (4.0 ± 1.5 s; n = 7). The immunohistochemistry and immunoblotting results demonstrated an increase in the bromodomain-containing protein 4-expressing dorsal root ganglia neurons (3.78 ± 0.38 fold; n = 7) and bromodomain-containing protein 4 protein levels (2.62 ± 0.39 fold; n = 6). After the complete Freund's adjuvant injection, histone H3 protein acetylation was enhanced in the voltage-gated sodium channel 1.7 promoter, and cyclin-dependent kinase 9 and phosphorylation of RNA polymerase II were recruited to this area. Furthermore, the voltage-gated sodium channel 1.7-mediated currents were enhanced in neurons of the complete Freund's adjuvant rats (55 ± 11 vs. 19 ± 9 pA/pF; n = 4 to 6 neurons). Using bromodomain-containing protein 4-targeted antisense small interfering RNA to the complete Freund's adjuvant-treated rats, the authors demonstrated a reduction in the expression of bromodomain-containing protein 4 (0.68 ± 0.16 fold; n = 7), a reduction in thermal hyperalgesia (7.5 ± 1.5 s; n = 7), and a reduction in the increased voltage-gated sodium channel 1.7 currents (21 ± 4 pA/pF; n = 4 to 6 neurons). Complete Freund's adjuvant triggers enhanced bromodomain-containing protein 4 expression, ultimately leading to the enhanced excitability of nociceptive neurons and thermal hyperalgesia. This effect is

Research for Forming up the Controlling Diagram Utilizing the Connection of a LV Resistor on Voltage Transformer’s Open-Triagle Coil to Reduce over Voltage Caused by Earth Fault in 6 kV Grid of QuangNinh Underground Mines

Directory of Open Access Journals (Sweden)

Viet Bun Ho

2018-01-01

Full Text Available Single phase earth-fault in MV grids usually causes overvoltage that harm to human being and electric equipment. If the magnitude of over voltage is so great, many grids’ eco-technical parameters will be affected. The paper analyzes all possible consequences of over voltage occurred in 6 kV grid of QuangNinh underground mines. Base on the analysis, a controlling diagram utilizing the connection of a LV resistor on voltage transformer’s open-triangle coil to reduce over voltage is recommended. The simulation results of the diagram are used to prove the effectiveness of solution: the over voltage magnitude is only in the range of (2,1–2,4.Uf. Other advantage that solution brings to relay system will be pointed out.

A Multi-Resolution Mode CMOS Image Sensor with a Novel Two-Step Single-Slope ADC for Intelligent Surveillance Systems

Directory of Open Access Journals (Sweden)

Daehyeok Kim

2017-06-01

Full Text Available In this paper, we present a multi-resolution mode CMOS image sensor (CIS for intelligent surveillance system (ISS applications. A low column fixed-pattern noise (CFPN comparator is proposed in 8-bit two-step single-slope analog-to-digital converter (TSSS ADC for the CIS that supports normal, 1/2, 1/4, 1/8, 1/16, 1/32, and 1/64 mode of pixel resolution. We show that the scaled-resolution images enable CIS to reduce total power consumption while images hold steady without events. A prototype sensor of 176 × 144 pixels has been fabricated with a 0.18 μm 1-poly 4-metal CMOS process. The area of 4-shared 4T-active pixel sensor (APS is 4.4 μm × 4.4 μm and the total chip size is 2.35 mm × 2.35 mm. The maximum power consumption is 10 mW (with full resolution with supply voltages of 3.3 V (analog and 1.8 V (digital and 14 frame/s of frame rates.

A Multi-Resolution Mode CMOS Image Sensor with a Novel Two-Step Single-Slope ADC for Intelligent Surveillance Systems.

Science.gov (United States)

Kim, Daehyeok; Song, Minkyu; Choe, Byeongseong; Kim, Soo Youn

2017-06-25

In this paper, we present a multi-resolution mode CMOS image sensor (CIS) for intelligent surveillance system (ISS) applications. A low column fixed-pattern noise (CFPN) comparator is proposed in 8-bit two-step single-slope analog-to-digital converter (TSSS ADC) for the CIS that supports normal, 1/2, 1/4, 1/8, 1/16, 1/32, and 1/64 mode of pixel resolution. We show that the scaled-resolution images enable CIS to reduce total power consumption while images hold steady without events. A prototype sensor of 176 × 144 pixels has been fabricated with a 0.18 μm 1-poly 4-metal CMOS process. The area of 4-shared 4T-active pixel sensor (APS) is 4.4 μm × 4.4 μm and the total chip size is 2.35 mm × 2.35 mm. The maximum power consumption is 10 mW (with full resolution) with supply voltages of 3.3 V (analog) and 1.8 V (digital) and 14 frame/s of frame rates.

A Standard CMOS Humidity Sensor without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

A microwave powered sensor assembly for microwave ovens

DEFF Research Database (Denmark)

2016-01-01

The present invention relates to a microwave powered sensor assembly for micro- wave ovens. The microwave powered sensor assembly comprises a microwave antenna for generating an RF antenna signal in response to microwave radiation at a predetermined excitation frequency. A dc power supply circuit...... of the microwave powered sensor assembly is operatively coupled to the RF antenna signal for extracting energy from the RF antenna signal and produce a power supply voltage. A sensor is connected to the power supply voltage and configured to measure a physical or chemical property of a food item under heating...... in a microwave oven chamber....

Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

Science.gov (United States)

Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

2011-03-22

A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

alpha-helical structural elements within the voltage-sensing domains of a K(+) channel.

Science.gov (United States)

Li-Smerin, Y; Hackos, D H; Swartz, K J

2000-01-01

Voltage-gated K(+) channels are tetramers with each subunit containing six (S1-S6) putative membrane spanning segments. The fifth through sixth transmembrane segments (S5-S6) from each of four subunits assemble to form a central pore domain. A growing body of evidence suggests that the first four segments (S1-S4) comprise a domain-like voltage-sensing structure. While the topology of this region is reasonably well defined, the secondary and tertiary structures of these transmembrane segments are not. To explore the secondary structure of the voltage-sensing domains, we used alanine-scanning mutagenesis through the region encompassing the first four transmembrane segments in the drk1 voltage-gated K(+) channel. We examined the mutation-induced perturbation in gating free energy for periodicity characteristic of alpha-helices. Our results are consistent with at least portions of S1, S2, S3, and S4 adopting alpha-helical secondary structure. In addition, both the S1-S2 and S3-S4 linkers exhibited substantial helical character. The distribution of gating perturbations for S1 and S2 suggest that these two helices interact primarily with two environments. In contrast, the distribution of perturbations for S3 and S4 were more complex, suggesting that the latter two helices make more extensive protein contacts, possibly interfacing directly with the shell of the pore domain.

A flexible slip sensor using triboelectric nanogenerator approach

Science.gov (United States)

Wang, Xudong; Liang, Jiaming; Xiao, Yuxiang; Wu, Yichuan; Deng, Yang; Wang, Xiaohao; Zhang, Min

2018-03-01

With the rapid development of robotic technology, tactile sensors for robots have gained great attention from academic and industry researchers. Tactile sensors for slip detection are essential for human-like steady control in dexterous robot hand. In this paper, we propose and demonstrate a flexible slip sensor based on triboelectric nanogenerator with a seesaw structure. The sensor is composed of two porous PDMS layers separated by an inverted trapezoid structure with a height of 500 μm. In order to customize the sensitivity of the sensor, porous PDMS was fabricated by mixing PDMS with deionized water thoroughly and then removing water with heat. Laser-induced porous graphene and aluminium are served as the pair of contact materials. To detect slip from different directions, two sets of the electrode pair were used. Experimental results show a distinct difference between static state and the moment when a slip happens was detected. In addition, the output voltage of the sensors increased as the increase of slip velocity from 0.25 mm/s to 2.5 mm/s. The flexible slip sensor proposed here shows the potential applications in smart robotics and prosthesis.

Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP

DEFF Research Database (Denmark)

Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

2010-01-01

A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane...... as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy....... Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing...

Uncooled tunneling infrared sensor

Science.gov (United States)

Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

1995-01-01

An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

A MEMS SOI-based piezoresistive fluid flow sensor

Science.gov (United States)

Tian, B.; Li, H. F.; Yang, H.; Song, D. L.; Bai, X. W.; Zhao, Y. L.

2018-02-01

In this paper, a SOI (silicon-on-insulator)-based piezoresistive fluid flow sensor is presented; the presented flow sensor mainly consists of a nylon sensing head, stainless steel cantilever beam, SOI sensor chip, printed circuit board, half-cylinder gasket, and stainless steel shell. The working principle of the sensor and some detailed contrastive analysis about the sensor structure were introduced since the nylon sensing head and stainless steel cantilever beam have distinct influence on the sensor performance; the structure of nylon sensing head and stainless steel cantilever beam is also discussed. The SOI sensor chip was fabricated using micro-electromechanical systems technologies, such as reactive ion etching and low pressure chemical vapor deposition. The designed fluid sensor was packaged and tested; a calibration installation system was purposely designed for the sensor experiment. The testing results indicated that the output voltage of the sensor is proportional to the square of the fluid flow velocity, which is coincident with the theoretical derivation. The tested sensitivity of the sensor is 3.91 × 10-4 V ms2/kg.

Characterization of active CMOS sensors for capacitively coupled pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

2015-07-01

Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

Humidity detection using chitosan film based sensor

Science.gov (United States)

Nasution, T. I.; Nainggolan, I.; Dalimunthe, D.; Balyan, M.; Cuana, R.; Khanifah, S.

2018-02-01

A humidity sensor made of the natural polymer chitosan has been successfully fabricated in the film form by a solution casting method. Humidity testing was performed by placing a chitosan film sensor in a cooling machine room, model KT-2000 Ahu. The testing results showed that the output voltage values of chitosan film sensor increased with the increase in humidity percentage. For the increase in humidity percentage from 30 to 90% showed that the output voltage of chitosan film sensor increased from 32.19 to 138.75 mV. It was also found that the sensor evidenced good repeatability and stability during the testing. Therefore, chitosan has a great potential to be used as new sensing material for the humidity detection of which was cheaper and environmentally friendly.

Low-Cost Open-Source Voltage and Current Monitor for Gas Metal Arc Weld 3D Printing

Directory of Open Access Journals (Sweden)

A. Pinar

2015-01-01

Full Text Available Arduino open-source microcontrollers are well known in sensor applications for scientific equipment and for controlling RepRap 3D printers. Recently low-cost open-source gas metal arc weld (GMAW RepRap 3D printers have been developed. The entry-level welders used have minimal controls and therefore lack any real-time measurement of welder voltage or current. The preliminary work on process optimization of GMAW 3D printers requires a low-cost sensor and data logger system to measure welder current and voltage. This paper reports on the development of a low-cost open-source power measurement sensor system based on Arduino architecture. The sensor system was designed, built, and tested with two entry-level MIG welders. The full bill of materials and open source designs are provided. Voltage and current were measured while making stepwise adjustments to the manual voltage setting on the welder. Three conditions were tested while welding with steel and aluminum wire on steel substrates to assess the role of electrode material, shield gas, and welding velocity. The results showed that the open source sensor circuit performed as designed and could be constructed for <$100 in components representing a significant potential value through lateral scaling and replication in the 3D printing community.

Electron Excitation Cross Sections for the S II Transitions: 3s(exp 2)3p(exp 3) 4S(exp o) approaches 3s(exp 2)3p(exp 3) 2D(exp o), 2P(exp o), and 3s3p(exp 4) 4P

Science.gov (United States)

Liao, C.; Chutjian, A.; Hitz, D.; Tayal, S. S.

1997-01-01

Experimental and theoretical collisional excitation cross sections are reported for the transitions 3s(exp 2)3p(exp 3)4S(exp o) approaches 3s(exp 2)3p(exp 3) 2D(exp o), 2P(exp o), and 3s3P(exp 4) 4P in S II. The transition wavelengths (energies) are 6716 A (1.85 eV), 4069 A (3.05 eV), and 1256 A (9.87 eV), respectively. In the experiments, use is made of the energy-loss merged-beams method. The metastable fraction of the S II beam was assessed and minimized. The contribution of elastically scattered electrons was reduced by the use of a lowered solenoidal magnetic field and a modulated radio-frequency voltage on the analyzing plates and by retarding grids to reject the elastically scattered electrons with larger Larmor radii. For each transition, comparisons are made among experiments, the new 19 state R-matrix calculation, and three other close-coupling calculations.

STUDY OF THE IMPACT OF THERMAL DRIFT ON RELIABILITY OF PRESSURE SENSORS

Directory of Open Access Journals (Sweden)

ABDELAZIZ BEDDIAF

2017-10-01

Full Text Available Piezoresistive pressure sensors, using a Wheatstone bridge with the piezoresistors, are typically supplied with a voltage ranging from 3 to 10 V involve thermal drift caused by Joule heating. In this paper, an accurate numerical model for optimization and predicting the thermal drift in piezoresistive pressure sensors due to the electric heater in its piezoresistors is adopted. In this case, by using the solution of 2D heat transfer equation considering Joule heating in Cartesian coordinates for the transient regime, we determine how the temperature affects the sensor when the supply voltage is applied. For this, the elevation of temperature due to the Joule heating has been calculated for various values of supply voltage and for several operating times of the sensor; by varying different geometrical parameters. Otherwise, the variation of the coefficient 44 in p-Si and pressure sensitivity as a function of the applied potential, as well as, for various times, for different dimensions of the device, have been also established. It is observed that the electrical heating leads to an important temperature rise in the piezoresistor. Consequently, it causes drift in the pressure sensitivity of the sensor upon application of a voltage. Finally, this work allows us to evaluate the reliability of sensors. Also, it permits to predict their behaviour against temperature due to the application of a voltage of a bridge and to minimize this effect by optimizing the geometrical parameters of the sensor and by reducing the supply voltage.

Thermal effects of an ICL-based mid-infrared CH4 sensor within a wide atmospheric temperature range

Science.gov (United States)

Ye, Weilin; Zheng, Chuantao; Sanchez, Nancy P.; Girija, Aswathy V.; He, Qixin; Zheng, Huadan; Griffin, Robert J.; Tittel, Frank K.

2018-03-01

The thermal effects of an interband cascade laser (ICL) based mid-infrared methane (CH4) sensor that uses long-path absorption spectroscopy were studied. The sensor performance in the laboratory at a constant temperature of ∼25 °C was measured for 5 h and its Allan deviation was ∼2 ppbv with a 1 s averaging time. A LabVIEW-based simulation program was developed to study thermal effects on infrared absorption and a temperature compensation technique was developed to minimize these effects. An environmental test chamber was employed to investigate the thermal effects that occur in the sensor system with variation of the test chamber temperature between 10 and 30 °C. The thermal response of the sensor in a laboratory setting was observed using a 2.1 ppm CH4 standard gas sample. Indoor/outdoor CH4 measurements were conducted to evaluate the sensor performance within a wide atmospheric temperature range.

Voltage-gated proton channel is expressed on phagosomes

International Nuclear Information System (INIS)

Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

2009-01-01

Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

Uninterrupted thermoelectric energy harvesting using temperature-sensor-based maximum power point tracking system

International Nuclear Information System (INIS)

Park, Jae-Do; Lee, Hohyun; Bond, Matthew

2014-01-01

Highlights: • Feedforward MPPT scheme for uninterrupted TEG energy harvesting is suggested. • Temperature sensors are used to avoid current measurement or source disconnection. • MPP voltage reference is generated based on OCV vs. temperature differential model. • Optimal operating condition is maintained using hysteresis controller. • Any type of power converter can be used in the proposed scheme. - Abstract: In this paper, a thermoelectric generator (TEG) energy harvesting system with a temperature-sensor-based maximum power point tracking (MPPT) method is presented. Conventional MPPT algorithms for photovoltaic cells may not be suitable for thermoelectric power generation because a significant amount of time is required for TEG systems to reach a steady state. Moreover, complexity and additional power consumption in conventional circuits and periodic disconnection of power source are not desirable for low-power energy harvesting applications. The proposed system can track the varying maximum power point (MPP) with a simple and inexpensive temperature-sensor-based circuit without instantaneous power measurement or TEG disconnection. This system uses TEG’s open circuit voltage (OCV) characteristic with respect to temperature gradient to generate a proper reference voltage signal, i.e., half of the TEG’s OCV. The power converter controller maintains the TEG output voltage at the reference level so that the maximum power can be extracted for the given temperature condition. This feedforward MPPT scheme is inherently stable and can be implemented without any complex microcontroller circuit. The proposed system has been validated analytically and experimentally, and shows a maximum power tracking error of 1.15%

Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

CERN Document Server

Kum, B H; Shin, M W; Park, J D

1999-01-01

This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

α-Helical Structural Elements within the Voltage-Sensing Domains of a K+ Channel

Science.gov (United States)

Li-Smerin, Yingying; Hackos, David H.; Swartz, Kenton J.

2000-01-01

Voltage-gated K+ channels are tetramers with each subunit containing six (S1–S6) putative membrane spanning segments. The fifth through sixth transmembrane segments (S5–S6) from each of four subunits assemble to form a central pore domain. A growing body of evidence suggests that the first four segments (S1–S4) comprise a domain-like voltage-sensing structure. While the topology of this region is reasonably well defined, the secondary and tertiary structures of these transmembrane segments are not. To explore the secondary structure of the voltage-sensing domains, we used alanine-scanning mutagenesis through the region encompassing the first four transmembrane segments in the drk1 voltage-gated K+ channel. We examined the mutation-induced perturbation in gating free energy for periodicity characteristic of α-helices. Our results are consistent with at least portions of S1, S2, S3, and S4 adopting α-helical secondary structure. In addition, both the S1–S2 and S3–S4 linkers exhibited substantial helical character. The distribution of gating perturbations for S1 and S2 suggest that these two helices interact primarily with two environments. In contrast, the distribution of perturbations for S3 and S4 were more complex, suggesting that the latter two helices make more extensive protein contacts, possibly interfacing directly with the shell of the pore domain. PMID:10613917

CMB-S4 Technology Book, First Edition

Energy Technology Data Exchange (ETDEWEB)

Abitbol, Maximilian H. [Columbia Univ., New York, NY (United States); et al.

2017-06-08

CMB-S4 is a proposed experiment to map the polarization of the Cosmic Microwave Background (CMB) to nearly the cosmic variance limit for the angular scales that are accessible from the ground. The science goals and capabilities of CMB-S4 in illuminating cosmic inflation, measuring the sum of neutrino masses, searching for relativistic relics in the early universe, characterizing dark energy and dark matter, and mapping the matter distribution in the universe have been described in the CMB-S4 Science Book. This Technology Book is a companion volume to the Science Book. The ambitious science goals of the proposed "Stage-IV" CMB-S4 will require a step forward in experimental capability from the current Stage-III experiments. To guide this process, the community summarized the current state of the technology and identify R&D efforts necessary to advance it for possible use in CMB-S4. The book focused on the technical challenges in four broad areas: Telescope Design; Receiver Optics; Focal-Plane Optical Coupling; and Focal-Plane Sensor and Readout.

The analytical calibration model of temperature effects on a silicon piezoresistive pressure sensor

Directory of Open Access Journals (Sweden)

Meng Nie

2017-03-01

Full Text Available Presently, piezoresistive pressure sensors are highly demanded for using in various microelectronic devices. The electrical behavior of these pressure sensor is mainly dependent on the temperature gradient. In this paper, various factors,which includes effect of temperature, doping concentration on the pressure sensitive resistance, package stress, and temperature on the Young’s modulus etc., are responsible for the temperature drift of the pressure sensor are analyzed. Based on the above analysis, an analytical calibration model of the output voltage of the sensor is proposed and the experimental data is validated through a suitable model.

Ultra-Sensitive Strain Sensor Based on Flexible Poly(vinylidene fluoride) Piezoelectric Film

Science.gov (United States)

Lu, Kai; Huang, Wen; Guo, Junxiong; Gong, Tianxun; Wei, Xiongbang; Lu, Bing-Wei; Liu, Si-Yi; Yu, Bin

2018-03-01

A flexible 4 × 4 sensor array with 16 micro-scale capacitive units has been demonstrated based on flexible piezoelectric poly(vinylidene fluoride) (PVDF) film. The piezoelectricity and surface morphology of the PVDF were examined by optical imaging and piezoresponse force microscopy (PFM). The PFM shows phase contrast, indicating clear interface between the PVDF and electrode. The electro-mechanical properties show that the sensor exhibits excellent output response and an ultra-high signal-to-noise ratio. The output voltage and the applied pressure possess linear relationship with a slope of 12 mV/kPa. The hold-and-release output characteristics recover in less than 2.5 μs, demonstrating outstanding electro-mechanical response. Additionally, signal interference between the adjacent arrays has been investigated via theoretical simulation. The results show the interference reduces with decreasing pressure at a rate of 0.028 mV/kPa, highly scalable with electrode size and becoming insignificant for pressure level under 178 kPa.

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Energy Technology Data Exchange (ETDEWEB)

Mikestikova, M., E-mail: mikestik@fzu.cz [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 18221 Prague 8 (Czech Republic); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Tackmann, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Hauser, M.; Jakobs, K.; Kuehn, S. [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); and others

2016-09-21

A radiation hard n{sup +}-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×10{sup 16} n{sub eq}/cm{sup 2}, by reactor neutron fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and by gamma rays from {sup 60}Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07. - Highlights: �

Characterisation by Impedance Spectroscopy and Capacitance-Voltage of an EMIS Sensor Functionalized by Catalase for Nitrite Detection

Directory of Open Access Journals (Sweden)

A. ZAZOUA

2014-05-01

Full Text Available Impedance spectroscopy and capacitance-voltage (C-V methods are a rapidly developing electrochemical technique for the characterization of biomaterial–functionalized electrodes and biocatalytic transformations on the electrodes surface, and specifically for the transduction of biosensing events at electrodes. Such techniques have been used in our work as a tool for the characterization of a new nitrite biosensor for environmental applications based on the immobilization of catalase on insulator-semiconductor (IS systems (p-Si/SiO2/Si3N4. The principle of the developed biosensor includes the following: Catalase catalyzed the breakdown of H2O2 into H2O and O2. Nitrite was selected as an inhibitor of catalase. Under optimal conditions, i.e. buffer capacity corresponding to 3 mM phosphate buffer, the catalase enzyme insulator semiconductor sensors shows a high sensitivity to nitrite detection. In both cases, the responses of these biosensors based on nitrite additions are good with the detection limit around 10-11 M. It is expected that such an original and promising concept of inhibitor-based biosensors based on reactivation by inhibitive effects, will be useful for the development of environmental smart biosensors based on the integration of ENFET with the corresponding instrumentation in the same silicon chip.

A colorimetric tetrathiafulvalene-calix 4 pyrrole anion sensor

DEFF Research Database (Denmark)

Nielsen, K. A.

2012-01-01

The interaction and colorimetric sensing properties of a tetrathiafulvalene substituted calix[4]pyrrole sensor with anions were investigated using H-1 NMR and absorption spectroscopic techniques. Visual color changes were observed upon addition of different anions (Cl-, Br-, CN-, and Ac......O-) to a solution of the sensor. (C) 2012 Elsevier Ltd. All rights reserved....

Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History.

Directory of Open Access Journals (Sweden)

Janin Riedelsberger

Full Text Available Voltage-gated potassium (K+ channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD, this K+ channel type segregates into at least two main functional categories-hyperpolarization-activated, inward-rectifying (Kin and depolarization-activated, outward-rectifying (Kout channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom.

Design of efficient loadcell for measurement of mechanical impact by piezoelectric PVDF film sensor

Directory of Open Access Journals (Sweden)

Priyanka Guin

2016-09-01

Full Text Available Conversion efficiency of mechanical impact into electrical voltage remains ever increasing demand for piezoelectric PVDF film sensor. For a given film sensor, the output voltage produced due to mechanical impact is highly dependent on the direction of stretching (or compressing and active area of the film sensor. More is the active area of the film; higher will be the output voltage. It is shown that the active area is significantly increased due to the ridge-like shape given at the inner surfaces of the plates of sandwich type loadcell and as a result of which higher conversion efficiency is obtained. The effectiveness of the ridge-like shape is confirmed statistically by conducting two factorial design of experiment in which shape and material of the loadcell are considered as the two factors with 2×4 matrix. In case of loadcell made of glass plates, more than 100% increase in the output voltage is observed for ridge-like shape in comparison to its plain counterpart. Both the bandwidth and frequency range of the output signal is found to be independent and dependent of the loadcell materials for indirect and direct impact with the loadcell respectively. The merits and demerits of the fabricated loadcells are discussed.

Microbial fuel cells as power supply of a low-power temperature sensor

Science.gov (United States)

Khaled, Firas; Ondel, Olivier; Allard, Bruno

2016-02-01

Microbial fuel cells (MFCs) show great promise as a concomitant process for water treatment and as renewable energy sources for environmental sensors. The small energy produced by MFCs and the low output voltage limit the applications of MFCs. Specific converter topologies are required to step-up the output voltage of a MFC. A Power Management Unit (PMU) is proposed for operation at low input voltage and at very low power in a completely autonomous way to capture energy from MFCs with the highest possible efficiency. The application of sensors for monitoring systems in remote locations is an important approach. MFCs could be an alternative energy source in this case. Powering a sensor with MFCs may prove the fact that wastewater may be partly turned into renewable energy for realistic applications. The Power Management Unit is demonstrated for 3.6 V output voltage at 1 mW continuous power, based on a low-cost 0.7-L MFC. A temperature sensor may operate continuously on 2-MFCs in continuous flow mode. A flyback converter under discontinuous conduction mode is also tested to power the sensor. One continuously fed MFC was able to efficiently and continuously power the sensor.

A Simple and Universal Resistive-Bridge Sensors Interface

Directory of Open Access Journals (Sweden)

Sergey Y. YURISH

2011-02-01

Full Text Available Resistive-bridge sensors are widely used in various sensor systems. There are many sensor signal conditioners from different manufacturers for such sensing elements. However, no one existing on the modern market integrated converter for resistive bridge sensors can work with both: resistive-bridge sensing elements and resistive-to-frequency and -duty-cycle converters’ outputs. A proposed and described in the article universal interface for resistive-bridge sensing elements and bridge-output-to-frequency and/or duty cycle converters based on the designed Universal Sensors and Transducers Interface (USTI integrated. It is based on a simple, cost effective three-point measuring technique and does not require any additional active components. The USTI IC is realized in a standard CMOS technology. The active supply current at operating voltage +4.5 V and clock frequency 20 MHz is not more than 9.5 mA This paper reports experimental results with a strain gauges bridge emulator and differential pressure resistive bridge sensor SX30GD2.

[4,4‧-bi(1,3,2-dioxathiolane)] 2,2‧-dioxide: A novel cathode additive for high-voltage performance in lithium ion batteries

Science.gov (United States)

Lee, Sang Hyun; Yoon, Sukeun; Hwang, Eui-Hyung; Kwon, Young-Gil; Lee, Young-Gi; Cho, Kuk Young

2018-02-01

High-voltage operation of lithium-ion batteries (LIBs) is a facile approach to obtaining high specific energy density, especially for LiNi0·5Mn0·3Co0·2O2 (NMC532) cathodes currently used in mid- and large-sized energy storage devices. However, high-voltage charging (>4.3 V) is accompanied by a rapid capacity fade over long cycles due to severe continuous electrolyte decomposition and instability at the cathode surface. In this study, the sulfite-based compound, [4,4‧-bi(1,3,2-dioxathiolane)] 2,2‧-dioxide (BDTD) is introduced as a novel electrolyte additive to enhance electrochemical performances of alumina-coated NMC532 cathodes cycled in the voltage range of 3.0-4.6 V. X-ray photoelectron spectroscopy (XPS) and AC impedance of cells reveal that BDTD preferentially oxidizes prior to the electrolyte solvents and forms stable film layers on to the cathode surface, preventing increased impedance caused by repeated electrolyte solvent decomposition in high-voltage operation. The cycling performance of the Li/NMC532 half-cell using an electrolyte of 1.0 M LiPF6 in ethylene carbonate/ethyl methyl carbonate (3/7, in volume) can be improved by adding a small amount of BDTD into the electrolyte. BDTD enables the usage of sulfite-type additives for cathodes in high-voltage operation.

Regulation of Na+ channel inactivation by the DIII and DIV voltage-sensing domains.

Science.gov (United States)

Hsu, Eric J; Zhu, Wandi; Schubert, Angela R; Voelker, Taylor; Varga, Zoltan; Silva, Jonathan R

2017-03-06

Functional eukaryotic voltage-gated Na + (Na V ) channels comprise four domains (DI-DIV), each containing six membrane-spanning segments (S1-S6). Voltage sensing is accomplished by the first four membrane-spanning segments (S1-S4), which together form a voltage-sensing domain (VSD). A critical Na V channel gating process, inactivation, has previously been linked to activation of the VSDs in DIII and DIV. Here, we probe this interaction by using voltage-clamp fluorometry to observe VSD kinetics in the presence of mutations at locations that have been shown to impair Na V channel inactivation. These locations include the DIII-DIV linker, the DIII S4-S5 linker, and the DIV S4-S5 linker. Our results show that, within the 10-ms timeframe of fast inactivation, the DIV-VSD is the primary regulator of inactivation. However, after longer 100-ms pulses, the DIII-DIV linker slows DIII-VSD deactivation, and the rate of DIII deactivation correlates strongly with the rate of recovery from inactivation. Our results imply that, over the course of an action potential, DIV-VSDs regulate the onset of fast inactivation while DIII-VSDs determine its recovery. © 2017 Hsu et al.

Efficient 2,4-dichloronitrobenzene removal in the coupled BES-UASB reactor: Effect of external voltage mode.

Science.gov (United States)

Chen, Hui; Gao, Xinyi; Wang, Caiqin; Shao, Junjie; Xu, Xiangyang; Zhu, Liang

2017-10-01

In this study, bioelectrochemical-upflow anaerobic sludge blanket (BES-UASB) system was developed for treatment of 2,4-dichloronitrobenzen (DClNB) containing wastewater to investigate the effect of external voltage with different supplying modes. Results showed that 2,4-dichloroaniline (DClAN) was under detection limit in R1 (applied with intermittent voltage) and R2 (applied with continuous voltage) when the DClNB loading increased from 25 to 100gm 3 d -1 (hydraulic retention time (HRT) was decreased from 24 to 6h) while sudden accumulation of DClAN (1.7mgL -1 ) was observed in R0 (control). Dechlorination efficiency (DE) decreased to 32.7%, 45.0% and 45.3% in R0, R1 and R2 when HRT was further shortened to 4h. Microbial community analysis indicated the significant enrichment of dechlorination-related species in R1 and R2 compared with R0, e.g., Dehalobacter and Dehalococcoides. In summary, the BES-UASB system with intermittent voltage is an alternative process for efficient treatment of DClNB containing wastewater, and the energy input was reduced markedly. Copyright © 2017 Elsevier Ltd. All rights reserved.

Treatment for GaSb surfaces using a sulphur blended (NH4)2S/(NH4)2SO4 solution

International Nuclear Information System (INIS)

Murape, D.M.; Eassa, N.; Neethling, J.H.; Betz, R.; Coetsee, E.; Swart, H.C.; Botha, J.R.; Venter, A.

2012-01-01

A sulphur based chemical, [(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ] to which S has been added, not previously reported for the treatment of (1 0 0) n-GaSb surfaces, is introduced and benchmarked against the commonly used passivants Na 2 S·9H 2 O and (NH 4 ) 2 S. The surfaces of the treated material were studied by scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It has been found that the native oxides present on the GaSb surface are more effectively removed when treated with ([(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ] + S) than with (NH 4 ) 2 S or Na 2 S·9H 2 O, as evidenced by the ratio of the O 506eV to Sb 457eV AES peaks. XPS results reveal that Sb 2 S 3 /Sb 2 S 5 “replaces” Sb 2 O 3 /Sb 2 O 5 , suggesting that sulphur atoms substitute oxygen atoms in Sb 2 O 3 /Sb 2 O 5 to form Sb-S. It seems sulphurization only partially removes Ga 2 O 3 . Treatment with ([(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ] + S) also results in a noteworthy improvement in the current-voltage (I-V) characteristics of Au/n-GaSb Schottky contacts compared to those fabricated on as-received material.

Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

Science.gov (United States)

Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

2016-03-31

Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

Karakterisasi Sensor Gas Lpg (Liquefied Petroleum Gas) Dari Bahan Komposit Semikonduktor Tio2(cuo)

OpenAIRE

Dewi, Ratna Sari; -, Elvaswer

2015-01-01

The Liquefied Petroleum Gas (LPG's) sensor in the form of composite has been characterized. The steps of manufacturing processes are the mixing of materials, calcinations at 500ºC for 4 hours, blended, compacted and sintered at 700ºC for 4 hours. The sensor was tested at room temperature through current (I)-voltage (V) characteristics, sensitivity, and conductivity. Based on measurement I-V characteristic it's known that sample with 10% addition of CuO have sensitivity of 10 at 10 volt vol...

Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

KAUST Repository

Zhang, Yu

2017-10-17

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

Science.gov (United States)

Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

2017-11-08

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Molecular determinants of voltage-gated sodium channel regulation by the Nedd4/Nedd4-like proteins

DEFF Research Database (Denmark)

Rougier, Jean-Sébastien; van Bemmelen, Miguel X; Bruce, M Christine

2004-01-01

-ubiquitin ligases of the Nedd4 family. We recently reported that cardiac Na(v)1.5 is regulated by Nedd4-2. In this study, we further investigated the molecular determinants of regulation of Na(v) proteins. When expressed in HEK-293 cells and studied using whole cell voltage clamping, the neuronal Na(v)1.2 and Na...... that Nedd4-dependent ubiquitination of Na(v) channels may represent a general mechanism regulating the excitability of neurons and myocytes via modulation of channel density at the plasma membrane....

A grid-voltage-sensorless resistive active power filter with series LC-filter

DEFF Research Database (Denmark)

Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

2017-01-01

Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

A Grid-Voltage-Sensorless Resistive Active Power Filter with Series LC-Filter

DEFF Research Database (Denmark)

Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

2018-01-01

Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

Maximization of the Supportable Number of Sensors in QoS-Aware Cluster-Based Underwater Acoustic Sensor Networks

Directory of Open Access Journals (Sweden)

Thi-Tham Nguyen

2014-03-01

Full Text Available This paper proposes a practical low-complexity MAC (medium access control scheme for quality of service (QoS-aware and cluster-based underwater acoustic sensor networks (UASN, in which the provision of differentiated QoS is required. In such a network, underwater sensors (U-sensor in a cluster are divided into several classes, each of which has a different QoS requirement. The major problem considered in this paper is the maximization of the number of nodes that a cluster can accommodate while still providing the required QoS for each class in terms of the PDR (packet delivery ratio. In order to address the problem, we first estimate the packet delivery probability (PDP and use it to formulate an optimization problem to determine the optimal value of the maximum packet retransmissions for each QoS class. The custom greedy and interior-point algorithms are used to find the optimal solutions, which are verified by extensive simulations. The simulation results show that, by solving the proposed optimization problem, the supportable number of underwater sensor nodes can be maximized while satisfying the QoS requirements for each class.

Self-calibrated humidity sensor in CMOS without post-processing.

Science.gov (United States)

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2012-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Self-Calibrated Humidity Sensor in CMOS without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Limited Scope Design Study for Multi-Sensor Towbody

Science.gov (United States)

2016-06-01

ports 2 Leak sensors 1 Electrical Surface supply voltage 300 V nominal (250–425 Vdc) Towbody output voltages 48/24/12 Vdc Load power...shallow water (អ m) at thousands of current and former Department of Defense (DoD) sites encompassing millions of acres. This design study...addresses the munitions remediation in shallow water problem with a system that uses a Multi-Sensor Towbody (MuST) and surface vessel with support

Application of Newton's optimal power flow in voltage/reactive power control

Energy Technology Data Exchange (ETDEWEB)

Bjelogrlic, M.; Babic, B.S. (Electric Power Board of Serbia, Belgrade (YU)); Calovic, M.S. (Dept. of Electrical Engineering, University of Belgrade, Belgrade (YU)); Ristanovic, P. (Institute Nikola Tesla, Belgrade (YU))

1990-11-01

This paper considers an application of Newton's optimal power flow to the solution of the secondary voltage/reactive power control in transmission networks. An efficient computer program based on the latest achievements in the sparse matrix/vector techniques has been developed for this purpose. It is characterized by good robustness, accuracy and speed. A combined objective function appropriate for various system load levels with suitable constraints, for treatment of the power system security and economy is also proposed. For the real-time voltage/reactive power control, a suboptimal power flow procedure has been derived by using the reduced set of control variables. This procedure is based on the sensitivity theory applied to the determination of zones for the secondary voltage/reactive power control and corresponding reduced set of regulating sources, whose reactive outputs represent control variables in the optimal power flow program. As a result, the optimal power flow program output becomes a schedule to be used by operators in the process of the real-time voltage/reactive power control in both normal and emergency operating states.

Adaptive Supply Voltage Management for Low Power Logic Circuitry Operating at Subthreshold

OpenAIRE

Rehan Ahmed

2015-01-01

With the rise in demand of portable hand held devices and with the rise in application of wireless sensor networks and RFID reduction of total power consumption has become a necessity. To save power we operate the logic circuitry of our devices at sub-threshold. In sub-threshold the drain current is exponentially dependent on the threshold voltage hence the threshold variation causes profound variation of ION and IOFF the ratio of which affect the speed of a circuit drastically. S...

The challenge of sCMOS image sensor technology to EMCCD

Science.gov (United States)

Chang, Weijing; Dai, Fang; Na, Qiyue

2018-02-01

In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

A Capacitive Humidity Sensor Based on Multi-Wall Carbon Nanotubes (MWCNTs

Directory of Open Access Journals (Sweden)

Zhen-Gang Zhao

2009-09-01

Full Text Available A new type of capacitive humidity sensor is introduced in this paper. The sensor consists of two plate electrodes coated with MWCNT films and four pieces of isolating medium at the four corners of the sensor. According to capillary condensation, the capacitance signal of the sensor is sensitive to relative humidity (RH, which could be transformed to voltage signal by a capacitance to voltage converter circuit. The sensor is tested using different saturated saline solutions at the ambient temperature of 25 °C, which yielded approximately 11% to 97% RH, respectively. The function of the MWCNT films, the effect of electrode distance, the temperature character and the repeatability of the sensor are discussed in this paper.

Depression of voltage-activated Ca2+ release in skeletal muscle by activation of a voltage-sensing phosphatase.

Science.gov (United States)

Berthier, Christine; Kutchukian, Candice; Bouvard, Clément; Okamura, Yasushi; Jacquemond, Vincent

2015-04-01

Phosphoinositides act as signaling molecules in numerous cellular transduction processes, and phosphatidylinositol 4,5-bisphosphate (PtdIns(4,5)P2) regulates the function of several types of plasma membrane ion channels. We investigated the potential role of PtdIns(4,5)P2 in Ca(2+) homeostasis and excitation-contraction (E-C) coupling of mouse muscle fibers using in vivo expression of the voltage-sensing phosphatases (VSPs) Ciona intestinalis VSP (Ci-VSP) or Danio rerio VSP (Dr-VSP). Confocal images of enhanced green fluorescent protein-tagged Dr-VSP revealed a banded pattern consistent with VSP localization within the transverse tubule membrane. Rhod-2 Ca(2+) transients generated by 0.5-s-long voltage-clamp depolarizing pulses sufficient to elicit Ca(2+) release from the sarcoplasmic reticulum (SR) but below the range at which VSPs are activated were unaffected by the presence of the VSPs. However, in Ci-VSP-expressing fibers challenged by 5-s-long depolarizing pulses, the Ca(2+) level late in the pulse (3 s after initiation) was significantly lower at 120 mV than at 20 mV. Furthermore, Ci-VSP-expressing fibers showed a reversible depression of Ca(2+) release during trains, with the peak Ca(2+) transient being reduced by ∼30% after the application of 10 200-ms-long pulses to 100 mV. A similar depression was observed in Dr-VSP-expressing fibers. Cav1.1 Ca(2+) channel-mediated current was unaffected by Ci-VSP activation. In fibers expressing Ci-VSP and a pleckstrin homology domain fused with monomeric red fluorescent protein (PLCδ1PH-mRFP), depolarizing pulses elicited transient changes in mRFP fluorescence consistent with release of transverse tubule-bound PLCδ1PH domain into the cytosol; the voltage sensitivity of these changes was consistent with that of Ci-VSP activation, and recovery occurred with a time constant in the 10-s range. Our results indicate that the PtdIns(4,5)P2 level is tightly maintained in the transverse tubule membrane of the muscle fibers

Analysis of unbalanced sensor in eddy current method of non destructive testing

International Nuclear Information System (INIS)

Chegodaev, V.V.

2001-01-01

Different types of sensors are used in eddy current method of non-destructive testing. The choosing of sensor type depends on control object. Different types of sensors can have the same schemes of cut-in in device for formation of information signal. The most common scheme of sensor cut-in is presented. The calculation of output voltage when the sensor is on a segment of the control object, which has not defect is made. The conditions of balancing are adduced and it was shown that the balancing of sensor is very difficult. The methods of compensation or account of voltage of an imbalance are indicated. (author)

A Sentinel Sensor Network for Hydrogen Sensing

Directory of Open Access Journals (Sweden)

Andrew J. Mason

2003-02-01

Full Text Available A wireless sensor network is presented for in-situ monitoring of atmospheric hydrogen concentration. The hydrogen sensor network consists of multiple sensor nodes, equipped with titania nanotube hydrogen sensors, distributed throughout the area of interest; each node is both sensor, and data-relay station that enables extended wide area monitoring without a consequent increase of node power and thus node size. The hydrogen sensor is fabricated from a sheet of highly ordered titania nanotubes, made by anodization of a titanium thick film, to which platinum electrodes are connected. The electrical resistance of the hydrogen sensor varies from 245 Ω at 500 ppm hydrogen, to 10.23 kΩ at 0 ppm hydrogen (pure nitrogen environment. The measured resistance is converted to voltage, 0.049 V at 500 ppm to 2.046 V at 0 ppm, by interface circuitry. The microcontroller of the sensor node digitizes the voltage and transmits the digital information, using intermediate nodes as relays, to a host node that downloads measurement data to a computer for display. This paper describes the design and operation of the sensor network, the titania nanotube hydrogen sensors with an apparent low level resolution of approximately 0.05 ppm, and their integration in one widely useful device.

Numerical Simulation of Output Response of PVDF Sensor Attached on a Cantilever Beam Subjected to Impact Loading

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Cao Vu Dung

2016-04-01

Full Text Available Polyvinylidene Flouride (PVDF is a film-type polymer that has been used as sensors and actuators in various applications due to its mechanical toughness, flexibility, and low density. A PVDF sensor typically covers an area of the host structure over which mechanical stress/strain is averaged and converted to electrical energy. This study investigates the fundamental “stress-averaging” mechanism for dynamic strain sensing in the in-plane mode. A numerical simulation was conducted to simulate the “stress-averaging” mechanism of a PVDF sensor attached on a cantilever beam subjected to an impact loading, taking into account the contribution of piezoelectricity, the cantilever beam’s modal properties, and electronic signal conditioning. Impact tests and FEM analysis were also carried out to verify the numerical simulation results. The results of impact tests indicate the excellent capability of the attached PVDF sensor in capturing the fundamental natural frequencies of the cantilever beam. There is a good agreement between the PVDF sensor’s output voltage predicted by the numerical simulation and that obtained in the impact tests. Parametric studies were conducted to investigate the effects of sensor size and sensor position and it is shown that a larger sensor tends to generate higher output voltage than a smaller one at the same location. However, the effect of sensor location seems to be more significant for larger sensors due to the cancelling problem. Overall, PVDF sensors exhibit excellent sensing capability for in-plane dynamic strain induced by impact loading.

Stray voltage mitigation

Energy Technology Data Exchange (ETDEWEB)

Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

2008-04-09

This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

Toward developing long-life water quality sensors for the ISS using planar REDOX and conductivity sensors

Science.gov (United States)

Buehler, M. G.; Kuhlman, G. M.; Keymeulen, D.; Myung, N.; Kounaves, S. P.

2003-01-01

REDOX and conductivity sensors are metal electrodes that are used to detect ionic species in solution by measuring the electrochemical cell current as the voltage is scanned. This paper describes the construction of the sensors, the potentiostat electronics, the measurement methodology, and applications to water quality measurements.

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Energy Technology Data Exchange (ETDEWEB)

Chao, Jin Yu [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Yuan, Zhi Guo, E-mail: ncityzg@163.com [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China)

2015-12-21

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

Wearable and Implantable Sensors: The Patient’s Perspective

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Alison McGregor

2012-12-01

Full Text Available There has been a rising interest in wearable and implantable biomedical sensors over the last decade. However, many technologies have not been integrated into clinical care, due to a limited understanding of user-centered design issues. Little information is available about these issues and there is a need to adopt more rigorous evidence standards for design features to allow important medical sensors to progress quicker into clinical care. Current trends in patient preferences need to be incorporated at an early stage into the design process of prospective clinical sensors. The first comprehensive patient data set, discussing mobile biomedical sensor technology, is presented in this paper. The study population mainly consisted of individuals suffering from arthritis. It was found that sensor systems needed to be small, discreet, unobtrusive and preferably incorporated into everyday objects. The upper extremity was seen as the favored position on the body for placement, while invasive placement yielded high levels of acceptance. Under these conditions most users were willing to wear the body-worn sensor for more than 20 h a day. This study is a first step to generate research based user-orientated design criteria’s for biomedical sensors.

A Novel Passive Wireless Sensor for Concrete Humidity Monitoring

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Shuangxi Zhou

2016-09-01

Full Text Available This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF Radio Frequency Identification (RFID technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods.

A Novel Passive Wireless Sensor for Concrete Humidity Monitoring.

Science.gov (United States)

Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

2016-09-20

This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods.

A Novel Passive Wireless Sensor for Concrete Humidity Monitoring

Science.gov (United States)

Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

2016-01-01

This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods. PMID:27657070

HOPG/ZnO/HOPG pressure sensor

Science.gov (United States)

Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

2017-12-01

Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

Science.gov (United States)

Huang, Haiyun; Wang, Dejun; Xu, Yue

2015-10-27

This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

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Haiyun Huang

2015-10-01

Full Text Available This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

Research experiments on pressure-difference sensors with ferrofluid

Energy Technology Data Exchange (ETDEWEB)

Ruican, Hao, E-mail: haoruican@163.com [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Huagang, Liu; Wen, Gong; Na, Zhang [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Ruixiao, Hao [Civil and Architectural Engineering Institute of CCCC-FHEB Co., Ltd., Beijing 101102 (China)

2016-10-15

Ferrofluid has distinctive properties and can be applied in many industrial uses, especially in sensors. The principles of pressure-difference sensors with ferrofluid were illustrated and experiments were demonstrated. Four types of ferrofluids with different concentrations were selected for the experiments performed. Then, the parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. Four U tubes with different diameters were designed and built. Experiments were conducted to analyze the impacts of tube diameter and ferrofluid concentration on the output voltage/pressure difference performance. According to the experiment results, the tube diameter has little effect on the sensor output voltage. With the concentration of ferrofluid increasing, the output voltage and sensitivity of the pressure-difference sensor increases. The measurable range of the sensor also increases with the increasing concentration of ferrofluid. The workable range and the sensitivity of the designed sensor were (−2000~+2000)Pa and 1.26 mV/Pa, respectively. - Highlights: • The principle of pressure difference sensor with ferrofluid was illustrated. • The parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. • Four series of U tubes with different diameter were designed and manufactured. • The experiments were made to analyze the factors of the tube diameter and the concentration of ferrofluid on the output-input pressure difference. • The sensitivity of the pressure difference sensor with ferrofluid was studied and the corresponding conclusions were obtained.