Performance review of an indigenously developed high power test stand built for the Indian S-band 5 MW pulsed klystron development

International Nuclear Information System (INIS)

Shrivastava, Purushottam; Baxy, D.; Mulchandani, J.; Hannurkar, P.R.; Joshi, L.M.

2003-01-01

CAT took up development of 5 MW S-Band klystrons indigenously in collaboration with CEERI Pilani. The development of klystron prototype is completed. These klystrons are very crucial devices, for energizing the 10-20 MeV electron accelerators, which are developed in the country for various industrial, medical and scientific applications. A test station has been developed indigenously at CAT for these klystrons. It consists of a 12 MW peak power 130 kV klystron pulse modulator, a 1 : 10 pulse transformer, 130 kV high voltage deck having high voltage pulse divider, pulse current transformer as well indigenously built klystron socket, filament supplies, klystron support structure and pulse transformer oil tank. After development/rigorous testing the test stand was shifted to CEERI and was installed and commissioned there by CAT. Gun collector test module and prototypes of the 5 MW klystron were tested, aged and conditioned at high power using this test stand. The details of the system / test results are discussed

Computer-aided design of the RF-cavity for a high-power S-band klystron

Science.gov (United States)

Kant, D.; Bandyopadhyay, A. K.; Pal, D.; Meena, R.; Nangru, S. C.; Joshi, L. M.

2012-08-01

This article describes the computer-aided design of the RF-cavity for a S-band klystron operating at 2856 MHz. State-of-the-art electromagnetic simulation tools SUPERFISH, CST Microwave studio, HFSS and MAGIC have been used for cavity design. After finalising the geometrical details of the cavity through simulation, it has been fabricated and characterised through cold testing. Detailed results of the computer-aided simulation and cold measurements are presented in this article.

Klystrons and modulators for SBLC

Energy Technology Data Exchange (ETDEWEB)

Bieler, M.; Choroba, S.; Hameister, J.; Lewin, H.-Ch. [Deutsches Elektronen-Synchrotron DESY, Hamburg (Germany)

1997-04-01

For SBLC, the DESY/THD S-band linear collider study, klystrons with 150 MW rf-pulse power at 50 Hz repetition rate and 3 {mu}s pulse duration are required [1]. This paper will give a short overview of the SBLC parameters and the S-band test linac at DESY. Two different modulator schemes, the conventional line type pulser and the hard tube pulser, will be discussed. After a brief description of the 150 MW S-band klystron the first operating experience with the klystron and a line type pulser at DESY will be presented. (author)

Lamb wave band gaps in one-dimensional radial phononic crystal plates with periodic double-sided corrugations

Energy Technology Data Exchange (ETDEWEB)

Li, Yinggang [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); School of Transportation, Wuhan University of Technology, Wuhan 430070 (China); Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Li, Suobin [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China)

2015-11-01

In this paper, we present the theoretical investigation of Lamb wave propagation in one-dimensional radial phononic crystal (RPC) plates with periodic double-sided corrugations. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite element method based on two-dimensional axial symmetry models in cylindrical coordinates. Numerical results show that the proposed RPC plates with periodic double-sided corrugations can yield several band gaps with a variable bandwidth for Lamb waves. The formation mechanism of band gaps in the double-sided RPC plates is attributed to the coupling between the Lamb modes and the in-phase and out-phases resonant eigenmodes of the double-sided corrugations. We investigate the evolution of band gaps in the double-sided RPC plates with the corrugation heights on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Significantly, with the introduction of symmetric double-sided corrugations, the antisymmetric Lamb mode is suppressed by the in-phase resonant eigenmodes of the double-sided corrugations, resulting in the disappearance of the lowest band gap. Furthermore, the effects of the geometrical parameters on the band gaps are further explored numerically.

Ka-Band Klystron Amplifier for CUBESATs, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — We propose a Ka-Band klystron amplifier for use in CubeSats. It will operate at 35.7 GHz, have 400 MHz of bandwidth, and output at least 32 watts of saturated power....

An S-band high gain relativistic klystron amplifier with high phase stability

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Li, Z. H.; Xu, Z.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China)

2014-11-15

For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.

RF windows used at s-band pulsed klystrons in KEK linac

Energy Technology Data Exchange (ETDEWEB)

Michizono, S.; Saito, Y. [KEK, National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

1997-04-01

The breakdown of the alumina RF-windows used in high-power klystrons is one of the most serious problems in the development of klystrons. This breakdown results from excess heating of alumina due to multipactor bombardments and/or localized RF dissipations. A statistical research of window materials was carried out, and high-power tests were performed in order to develop RF windows having high durability for the KEKB klystrons. The breakdown mechanism of RF windows is being considered. An improved RF window installed in a KEKB klystron is also being tested. (J.P.N)

A non-uniform three-gap buncher cavity with suppression of transverse-electromagnetic mode leakage in the triaxial klystron amplifier

Energy Technology Data Exchange (ETDEWEB)

Qi, Zumin; Zhang, Jun, E-mail: zhangjun-nudt@126.com; Zhong, Huihuang; Zhu, Danni; Qiu, Yongfeng [College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2014-01-15

The triaxial klystron amplifier is an efficient high power relativistic klystron amplifier operating at high frequencies due to its coaxial structure with large radius. However, the coaxial structures result in coupling problems among the cavities as the TEM mode is not cut-off in the coaxial tube. Therefore, the suppression of the TEM mode leakage, especially the leakage from the buncher cavity to the input cavity, is crucial in the design of a triaxial klystron amplifier. In this paper, a non-uniform three-gap buncher cavity is proposed to suppress the TEM mode leakage. The cold cavity analysis shows that the non-uniform three-gap buncher cavity can significantly suppress the TEM mode generation compared to a uniform three-gap buncher cavity. Particle-in-cell simulation shows that the power leakage to the input cavity is less than 1.5‰ of the negative power in the buncher cavity and the buncher cavity can efficiently modulate an intense relativistic electron beam free of self-oscillations. A fundamental current modulation depth of 117% is achieved by employing the proposed non-uniform buncher cavity into an X-band triaxial amplifier, which results in the high efficiency generation of high power microwave.

A high-gain and high-efficiency X-band triaxial klystron amplifier with two-stage cascaded bunching cavities

Science.gov (United States)

Zhang, Wei; Ju, Jinchuan; Zhang, Jun; Zhong, Huihuang

2017-12-01

To achieve GW-level amplification output radiation at the X-band, a relativistic triaxial klystron amplifier with two-stage cascaded double-gap bunching cavities is investigated. The input cavity is optimized to obtain a high absorption rate of the external injection microwave. The cascaded bunching cavities are optimized to achieve a high depth of the fundamental harmonic current. A double-gap standing wave extractor is designed to improve the beam wave conversion efficiency. Two reflectors with high reflection coefficients both to the asymmetric mode and the TEM mode are employed to suppress the asymmetric mode competition and TEM mode microwave leakage. Particle-in-cell simulation results show that a high power microwave with a power of 2.53 GW and a frequency of 8.4 GHz is generated with a 690 kV, 9.3 kA electron beam excitation and a 25 kW seed microwave injection. Particularly, the achieved power conversion efficiency is about 40%, and the gain is as high as 50 dB. Meanwhile, there is insignificant self-excitation of the parasitic mode in the proposed structure by adopting the reflectors. The relative phase difference between the injected signals and the output microwaves keeps locked after the amplifier becomes saturated.

Ultra-High Gradient S-band Linac for Laboratory and Industrial Applications

Science.gov (United States)

Faillace, L.; Agustsson, R.; Dolgashev, V.; Frigola, P.; Murokh, A.; Rosenzweig, J.; Yakimenko, V.

2010-11-01

A strong demand for high gradient structures arises from the limited real estate available for linear accelerators. RadiaBeam Technologies is developing a Doubled Energy Compact Accelerator (DECA) structure: an S-band standing wave electron linac designed to operate at accelerating gradients of up to 50 MV/m. In this paper, we present the radio-frequency design of the DECA S-band accelerating structure, operating at 2.856 GHz in the π-mode. The structure design is heavily influenced by NLC collaboration experience with ultra high gradient X-band structures; S-band, however, is chosen to take advantage of commonly available high power S-band klystrons.

Klystron development in India

International Nuclear Information System (INIS)

Joshi, S.N.; Joshi, L.M.

2006-01-01

Full text: The high power klystrons belong to the family of microwave tube power amplifiers that find wide use in communication, radar, heating of plasma in thermo-nuclear reactors, industrial microwave heating and particle accelerators for medical, industrial and scientific applications including nuclear waste transmutation, energy production by sub-critical reactors and spallation neutron sources. With the rapid growth of the country in scientific and industrial research sector, there is a large in house demand of klystrons covering wide frequency and power ranges for various applications. The main users of klystrons are defense/DRDO, BARC, RRCAT, SAMEER and IPR. A recent survey of the requirement of microwave tubes in the country conducted by CEERI has indicated a substantial requirement of klystrons in different frequency and power ranges. There are only a few established commercial vendors of klystrons around the globe. Keeping the strategic nature of applications and high cost of tube in mind, it is felt necessary to have indigenous development and production of klystrons to the extent possible. Presently CEERI has the credit of being the only place in the country where klystrons have been successfully designed and developed. It has created a strong infrastructure for computer-aided design of klystrons, their fabrication and testing. Currently it is engaged in the development of a high average power S-band pulsed klystron under MoU with BARC and is planning to take up development of klystrons for medical linacs and miniature klystrons for defense applications. Apart from that it is also planned to take-up development of low frequency CW power klystrons for ADSS programme. RRCAT has also started some activities on design and development of klystrons. They are already using single and multi-beam klystrons for INDUS and other linac programmes and have a large projected requirement of klystrons in next ten years. BEL, Bangalore has been producing low cw power

Experimental demonstration of a Ku-band radial-line relativistic klystron oscillator based on transition radiation

Science.gov (United States)

Dang, Fangchao; Zhang, Xiaoping; Zhang, Jun; Ju, Jinchuan; Zhong, Huihuang

2017-03-01

We report on a radial-line relativistic klystron oscillator (RL-RKO), which is physically designed to generate gigawatt-level high power microwaves (HPMs) at Ku-band. The 3π/4 mode of a four-gap buncher is selected to highly modulate the radially propagating intense relativistic electron beam (IREB). A three-gap extractor operating at the π mode is employed to extract the radio-frequency energy efficiently. The Ku-band RL-RKO is investigated experimentally on an intense-current electron beam accelerator. The radially propagating IREB is well focused with an axial-width of 2 mm by a radial magnetic field of 0.4 T. Microwaves with a frequency of 14.86 GHz and a power of 1.5 GW are generated, corresponding to an efficiency of 24%, which indicates a significant advance for the research of radial-line HPM sources.

New klystron technology

Science.gov (United States)

Faillon, G.

1985-10-01

It is pointed out that klystrons representing high-power RF sources are mainly used in applications related to radars and scientific instrumentation. High peak power pulsed klystrons are discussed. It is found that a large number of linacs are powered by S-band klystrons (2.856 or 2.9985 GHz) with pulse durations of a few microseconds. Special precautions are being taken to insure that the breakdown voltage will not be reached, and very thin titanium coatings are employed to protect the ceramic against discharges. Attention is given to very large pulse width tubes, CW tubes, and limits of the power-frequency domain.

Development of L-band, 10MW multi beam klystron

International Nuclear Information System (INIS)

Irikura, M.; Miyake, S.; Yano, A.; Kazakov, S.; Larionov, A.; Teryaev, V.; Chin, Y.H.

2004-01-01

A 10-MW, L-band multi beam klystron (MBK) for TESLA linear collider and TESLA XFEL has been under development at Toshiba Electron Tubes and Devices Co., Ltd. (TETD) in collaboration with KEK. The TESLA requires pulsed klystrons capable of 10 MW output power at 1300 MHz with 1.5 ms pulse length and a repetition rate of 10 pps. The MBK with 6 low-perveance beams in parallel enables us to operate at lower cathode voltage with higher efficiency. The design work has been accomplished and the fabrication is under way. We are going to start conditioning and testing of prototype no.0 in the middle of July 2004. The design overview will be presented. (author)

W-band LiGA fabricated klystron

Science.gov (United States)

Song, Liqun

2002-01-01

Klystrino-W-band klystron was proposed by scientists at SLAC to satisfy recent applications in advanced accelerators, medical treatment, radars and communications. LiGA (a German acronym for lithographe, galvanoformung, and abformung) is introduced in the fabrication of klystrino for the first time in the history of microwave tube fabrication. The cold test experiments show that LiGA fabrication yields best surface smoothness compared with an alternative way EDM (Electrical Discharge Machining). Resultantly LiGA fabricated klystrino has the smallest wall loss which maximizes the circuit efficiency of the output structure. A multiple-gap coupled cavity is motivated to be employed as the klystrino output cavity for maximizing the efficiency. Klytrino is simulated by 1-D, 2-D and 3-D simulation codes. Particularly a complete klystrino is simulated intensively using 2-D MAGIC Particle-in-Cell (PIC) code either for beam absence or beam presence. Many simulation techniques are developed such as model transformation from 3-D to 2-D, circuit parameter simulation, dispersion characteristic analysis, pre bunched electron beam mode and so on. Klystrino, as a 3-D structure, is modeled by 3-D MAFIA for analyzing the cold circuit properties. 3-D MAGIC is explored to simulate klystrino for the actual structure analysis and actual beam interaction process observation.

Expansion of lower-frequency locally resonant band gaps using a double-sided stubbed composite phononic crystals plate with composite stubs

Energy Technology Data Exchange (ETDEWEB)

Li, Suobin; Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Li, Yinggang [Key Laboratory of High Performance Ship Technology of Ministry of Education, Wuhan University of Technology, Wuhan, 430070 (China); Chen, Weihua [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)

2016-06-03

We studied the expansion of locally resonant complete band gaps in two-dimensional phononic crystals (PCs) using a double-sided stubbed composite PC plate with composite stubs. Results show that the introduction of the proposed structure gives rise to a significant expansion of the relative bandwidth by a factor of 1.5 and decreases the opening location of the first complete band gap by a factor of 3 compared to the classic double-sided stubbed PC plate with composite stubs. Furthermore, more band gaps appear in the lower-frequency range (0.006). These phenomena can be attributed to the strong coupling between the “analogous rigid mode” of the stub and the anti-symmetric Lamb modes of the plate. The “analogous rigid mode” of the stub is produced by strengthening the localized resonance effect of the composite plates through the double-sided stubs, and is further strengthened through the introduction of composite stubs. The “analogous rigid mode” of the stubs expands the out-of-plane band gap, which overlaps with in-plane band gap in the lower-frequency range. As a result, the complete band gap is expanded and more complete band gaps appear. - Highlights: • Expansion of lower-frequency locally resonant BGs using novel composite phononic crystals plates. • The proposed structure expands the relative bandwidth 1.5 times compared to classic doubled-sided stubbed PC plates. • The opening location of the first complete BG decreases 3 times compared to the classic doubled-sided stubbed PC plates. • The concept “analogous rigid mode” is put forward to explain the expansion of lower-frequency BGs.

High-pressure band-gap engineering in lead-free Cs{sub 2}AgBiBr{sub 6} double perovskite

Energy Technology Data Exchange (ETDEWEB)

Li, Qian [Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen, Guangdong (China); College of Chemistry, Nankai University, Tianjin (China); Wang, Yonggang; Yang, Wenge [High Pressure Synergetic Consortium, HPSynC, Geophysical Laboratory, Carnegie Institution of Washington, Argonne, IL (United States); Pan, Weicheng; Tang, Jiang [Wuhan National Laboratory for Optoelectronics, WNLO and School of Optical and Electronic Information, Huazhong University of Science and Technology, HUST, Wuhan (China); Zou, Bo [State Key Laboratory of Superhard Materials, Jilin University, Changchun (China); Quan, Zewei [Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen, Guangdong (China)

2017-12-11

Novel inorganic lead-free double perovskites with improved stability are regarded as alternatives to state-of-art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs{sub 2}AgBiBr{sub 6} double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs{sub 2}AgBiBr{sub 6} is, for the first time, achieved on inorganic photovoltaic double perovskites through high pressure treatments. Moreover, the narrowed band gap is partially retainable after releasing pressure, promoting its optoelectronic applications. This work not only provides novel insights into the structure-property relationship in lead-free double perovskites, but also offers new strategies for further development of advanced perovskite devices. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Modulators for the S-band test linac at DESY

Science.gov (United States)

Bieler, M.; Choroba, S.; Hameister, J.; Lewin, H.-Ch.

1995-07-01

The development of adequate modulators for high peak power klystrons is one of the focus points for linear collider R&D programs. For the DESY/THD S-band linear collider study 150 MW rf-pulse power at 50 Hz repetition rate and 3 μs pulse duration is required [1]. Two different modulator schemes are under investigation. One is the conventional line type pulser, using a pulse forming network and a step up transformer, the other one is a hard tube pulser, using a dc power source at the full klystron voltage and a switch tube. This paper is focused on the modulator development for the S-band Test Linac at DESY. After a short overview over the test linac and a brief description of the 150 MW S-band klystron the circuitry of the line type pulse (LTP) is given. A hard tube pulser (HTP), which switches the high voltage directly from a storage capacitor to the klystron, has been built up at DESY. Circuitry and the results of the commissioning of the switch tube are reported.

Very broad bandwidth klystron amplifiers

Science.gov (United States)

Faillon, G.; Egloff, G.; Farvet, C.

Large surveillance radars use transmitters at peak power levels of around one MW and average levels of a few kW, and possibly several tens of kW, in S band, or even C band. In general, the amplification stage of these transmitters is a microwave power tube, frequently a klystron. Although designers often turn to klystrons because of their good peak and average power capabilities, they still see them as narrow band amplifiers, undoubtedly because of their resonant cavities which, at first sight, would seem highly selective. But, with the progress of recent years, it has now become quite feasible to use these tubes in installations requiring bandwidths in excess of 10 - 12 percent, and even 15 percent, at 1 MW peak for example, in S-band.

High-power klystrons

Science.gov (United States)

Siambis, John G.; True, Richard B.; Symons, R. S.

1994-05-01

Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

W-Band Sheet Beam Klystron Design

International Nuclear Information System (INIS)

Scheitrum, G.; Caryotakis, G.; Burke, A.; Jensen, A.; Jongewaard, E.; Krasnykh, A.; Neubauer, M.; Phillips, R.; Rauenbuehler, K.

2011-01-01

Sheet beam devices provide important advantages for very high power, narrow bandwidth RF sources like accelerator klystrons (1). Reduced current density and increased surface area result in increased power capabi1ity, reduced magnetic fields for focusing and reduced cathode loading. These advantages are offset by increased complexity, beam formation and transport issues and potential for mode competition in the ovennoded cavities and drift tube. This paper will describe the design issues encountered in developing a 100 kW peak and 2 kW average power sheet beam k1ystron at W-band including beam formation, beam transport, circuit design, circuit fabrication and mode competition.

High-Pressure Band-Gap Engineering in Lead-Free Cs ₂ AgBiBr ₆ Double Perovskite

Energy Technology Data Exchange (ETDEWEB)

Li, Qian [Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen Guangdong 518055 P.R. China; College of Chemistry, Nankai University, Tianjin 300071 P.R. China; Wang, Yonggang [High Pressure Synergetic Consortium, HPSynC, Geophysical Laboratory, Carnegie Institution of Washington, Argonne IL 60439 USA; Pan, Weicheng [Wuhan National Laboratory for Optoelectronics, WNLO and School of Optical and Electronic Information, Huazhong University of Science and Technology, HUST, Wuhan 430074 P.R. China; Yang, Wenge [High Pressure Synergetic Consortium, HPSynC, Geophysical Laboratory, Carnegie Institution of Washington, Argonne IL 60439 USA; Zou, Bo [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 P.R. China; Tang, Jiang [Wuhan National Laboratory for Optoelectronics, WNLO and School of Optical and Electronic Information, Huazhong University of Science and Technology, HUST, Wuhan 430074 P.R. China; Quan, Zewei [Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen Guangdong 518055 P.R. China

2017-11-15

Novel inorganic lead-free double perovskites with improved stability are regarded as alternatives to state-of-art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs2AgBiBr6 double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs2AgBiBr6 is, for the first time, achieved on inorganic photovoltaic double perovskites through high pressure treatments. Moreover, the narrowed band gap is partially retainable after releasing pressure, promoting its optoelectronic applications. This work not only provides novel insights into the structure–property relationship in lead-free double perovskites, but also offers new strategies for further development of advanced perovskite devices.

S-band 45 MW peak power test facility at RRCAT

International Nuclear Information System (INIS)

Wanmode, A. Yashwant; Reddy, Sivananda; Mulchandani, J.; Mohania, Praveen; Shrivastava, B. Purushottam

2015-01-01

RRCAT is engaged in the design and development of high energy electron LINAC as future injectors for the Booster Synchrotron for Indus-1 and Indus-2 SRS. The high energy LINAC will need microwave power over 30 MW depending on the number of structures to be energized. In order to have advance preparations for this development a 45 MW S-Band test facility has been designed and developed at RRCAT. The test stand is built around a 45 MW peak power S-band pulsed klystron, A conventional pulse forming network based modulator for klystron has been designed and developed. The WR-284 waveguide transmission system consisting of dual directional couplers, SF 6 gas pressurization unit, high power waveguide load and arc sensor has been developed and interfaced with the klystron. The klystron has been successfully tested up to 30 MW peak power at 2856 MHz on SF 6 pressurized waveguide line. A solid state S Band driver amplifier up to 1 kW output power was designed developed for driving the klystron. This paper describes the results of 30 MW peak power test of this facility. (author)

Direct band gap measurement of Cu(In,Ga)(Se,S)2 thin films using high-resolution reflection electron energy loss spectroscopy

International Nuclear Information System (INIS)

Heo, Sung; Lee, Hyung-Ik; Park, Jong-Bong; Ko, Dong-Su; Chung, JaeGwan; Kim, KiHong; Kim, Seong Heon; Yun, Dong-Jin; Ham, YongNam; Park, Gyeong Su; Song, Taewon; Lee, Dongho; Nam, Junggyu; Kang, Hee Jae; Choi, Pyung-Ho; Choi, Byoung-Deog

2015-01-01

To investigate the band gap profile of Cu(In 1−x ,Ga x )(Se 1−y S y ) 2 of various compositions, we measured the band gap profile directly as a function of in-depth using high-resolution reflection energy loss spectroscopy (HR-REELS), which was compared with the band gap profile calculated based on the auger depth profile. The band gap profile is a double-graded band gap as a function of in-depth. The calculated band gap obtained from the auger depth profile seems to be larger than that by HR-REELS. Calculated band gaps are to measure the average band gap of the spatially different varying compositions with respect to considering its void fraction. But, the results obtained using HR-REELS are to be affected by the low band gap (i.e., out of void) rather than large one (i.e., near void). Our findings suggest an analytical method to directly determine the band gap profile as function of in-depth

180 MW/180 KW pulse modulator for S-band klystron of LUE-200 linac of IREN installation of JINR

Science.gov (United States)

Su, Kim Dong; Sumbaev, A. P.; Shvetsov, V. N.

2014-09-01

The offer on working out of the pulse modulator with 180 MW pulse power and 180 kW average power for pulse S-band klystrons of LUE-200 linac of IREN installation at the Laboratory of neutron physics (FLNP) at JINR is formulated. Main requirements, key parameters and element base of the modulator are presented. The variant of the basic scheme on the basis of 14 (or 11) stage 2 parallel PFN with the thyratron switchboard (TGI2-10K/50) and six parallel high voltage power supplies (CCPS Power Supply) is considered.

The 5K70SK automatically tuned, high power, S-band klystron

Science.gov (United States)

Goldfinger, A.

1977-01-01

Primary objectives include delivery of 44 5K70SK klystron amplifier tubes and 26 remote tuner assemblies with spare parts kits. Results of a reliability demonstration on a klystron test cavity are discussed, along with reliability tests performed on a remote tuning unit. Production problems and one design modification are reported and discussed. Results of PAT and DVT are included.

Controllable Absorption and Dispersion Properties of an RF-driven Five-Level Atom in a Double-Band Photonic-Band-Gap Material

International Nuclear Information System (INIS)

Ding Chunling; Li Jiahua; Yang Xiaoxue

2011-01-01

The probe absorption-dispersion spectra of a radio-frequency (RF)-driven five-level atom embedded in a photonic crystal are investigated by considering the isotropic double-band photonic-band-gap (PBG) reservoir. In the model used, the two transitions are, respectively, coupled by the upper and lower bands in such a PBG material, thus leading to some curious phenomena. Numerical simulations are performed for the optical spectra. It is found that when one transition frequency is inside the band gap and the other is outside the gap, there emerge three peaks in the absorption spectra. However, for the case that two transition frequencies lie inside or outside the band gap, the spectra display four absorption profiles. Especially, there appear two sharp peaks in the spectra when both transition frequencies exist inside the band gap. The influences of the intensity and frequency of the RF-driven field on the absorptive and dispersive response are analyzed under different band-edge positions. It is found that a transparency window appears in the absorption spectra and is accompanied by a very steep variation of the dispersion profile by adjusting system parameters. These results show that the absorption-dispersion properties of the system depend strongly on the RF-induced quantum interference and the density of states (DOS) of the PBG reservoir. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Design of a Ku band miniature multiple beam klystron

Energy Technology Data Exchange (ETDEWEB)

Bandyopadhyay, Ayan Kumar, E-mail: ayan.bandyopadhyay@gmail.com; Pal, Debasish; Kant, Deepender [Microwave Tubes Division, CSIR-CEERI, Pilani, Rajasthan-333031 (India); Saini, Anil; Saha, Sukalyan; Joshi, Lalit Mohan

2016-03-09

The design of a miniature multiple beam klystron (MBK) working in the Ku-band frequency range is presented in this article. Starting from the main design parameters, design of the electron gun, the input and output couplers and radio frequency section (RF-section) are presented. The design methodology using state of the art commercial electromagnetic design tools, analytical formulae as well as noncommercial design tools are briefly presented in this article.

Comparison between the performance of some KEK-klystrons and simulation results

Energy Technology Data Exchange (ETDEWEB)

Fukuda, Shigeki [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

1997-04-01

Recent developments of various klystron simulation codes have enabled us to realistically design klystrons. This paper presents various simulation results using the FCI code and the performances of tubes manufactured based on this code. Upgrading a 30-MW S-band klystron and developing a 50-MW S-band klystron for the KEKB projects are successful examples based on FCI-code predictions. Mass-productions of these tubes have already started. On the other hand, a discrepancy has been found between the FCI simulation results and the performance of real tubes. In some cases, the simulation results lead to high-efficiency results, while manufactured tubes show the usual value, or a lower value, of the efficiency. One possible cause may come from a data mismatch between the electron-gun simulation and the input data set of the FCI code for the gun region. This kind of discrepancy has been observed in 30-MW S-band pulsed tubes, sub-booster pulsed tubes and L-band high-duty pulsed klystrons. Sometimes, JPNDSK (one-dimensional disk-model code) gives similar results. Some examples using the FCI code are given in this article. An Arsenal-MSU code could be applied to the 50-MW klystron under collaboration with Moscow State University; a good agreement has been found between the prediction of the code and performance. (author)

A high efficiency Ku-band radial line relativistic klystron amplifier

Energy Technology Data Exchange (ETDEWEB)

Dang, Fangchao; Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Zhong, Huihuang; Zhang, Jun; Ju, Jinchuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2016-07-15

To achieve the gigawatt-level microwave amplification output at Ku-band, a radial-line relativistic klystron amplifier is proposed and investigated in this paper. Different from the annular electron beam in conventional axial relativistic klystron amplifiers, a radial-radiated electron beam is employed in this proposed klystron. Owing to its radially spreading speciality, the electron density and space charge effect are markedly weakened during the propagation in the radial line drift tube. Additionally, the power capacity, especially in the output cavity, is enhanced significantly because of its large volume, which is profitable for the long pulse operation. Particle-in-cell simulation results demonstrate that a high power microwave with the power of 3 GW and the frequency of 14.25 GHz is generated with a 500 kV, 12 kA electron beam excitation and the 30 kW radio-frequency signal injection. The power conversion efficiency is 50%, and the gain is about 50 dB. Meanwhile, there is insignificant electron beam self-excitation in the proposed structure by the adoption of two transverse electromagnetic reflectors. The relative phase difference between the injected signals and output microwaves keeps stable after the amplifier saturates.

Design and development of permanent magnet based focusing lens for J-Band Klystron

Energy Technology Data Exchange (ETDEWEB)

Singh, Kumud; Itteera, Janvin; Ukarde, Priti; Malhotra, Sanjay; Taly, Y.K., E-mail: kumuds@barc.gov.in [Control Instrumentation Division, Bhabha Atomic Research Centre, Mumbai (India); Bandyopadhay, Ayan; Meena, Rakesh; Rawat, Vikram; Joshi, L.M [Microwave Tubes Division, Central Electronics Engineering Research Institute, Pilani (India)

2014-07-01

Applying permanent magnet technology to beam focusing in klystrons can reduce their power consumption and increase their reliability of operation. Electromagnetic design of the beam focusing elements, for high frequency travelling wave tubes, is very critical. The magnitude and profile of the magnetic field need to match the optics requirement from beam dynamics studies. The rise of the field from cathode gun region to the uniform field region (RF section) is important as the desired transition from zero to peak axial field must occur over a short axial distance. Confined flow regime is an optimum choice to minimize beam scalloping but demands an axial magnetic field greater than 2 - 3 times the Brillouin flow field. This necessitates optimization in the magnet design achieve high magnetic field within given spatial constraints. Electromagnetic design and simulations were done using 3D Finite element method (FEM) analysis software. A permanent magnet based focusing lens for a miniature J-Band klystron has been designed and developed at Control Instrumentation Division, BARC. This paper presents the design, simulation studies, beam transmission and RF tests results for J Band klystron with permanent magnet focusing lens. (author)

Direct band gap measurement of Cu(In,Ga)(Se,S){sub 2} thin films using high-resolution reflection electron energy loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Heo, Sung [Analytical Engineering Group, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Lee, Hyung-Ik; Park, Jong-Bong; Ko, Dong-Su; Chung, JaeGwan; Kim, KiHong; Kim, Seong Heon; Yun, Dong-Jin; Ham, YongNam; Park, Gyeong Su [Analytical Engineering Group, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); Song, Taewon [Energy lab, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); Lee, Dongho, E-mail: dhlee0333@gmail.com; Nam, Junggyu [PV Development Team, Energy Solution Business Division, Samsung SDI, 467 Beonyeong-ro, Cheonan-si, Chungcheongnam-do 331-330 (Korea, Republic of); Kang, Hee Jae [Department of Physics, Chungbuk National University, Gaesin-dong, Heungdeok-gu, Cheongju, 361-763 (Korea, Republic of); Choi, Pyung-Ho; Choi, Byoung-Deog, E-mail: bdchoi@skku.edu [College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

2015-06-29

To investigate the band gap profile of Cu(In{sub 1−x},Ga{sub x})(Se{sub 1−y}S{sub y}){sub 2} of various compositions, we measured the band gap profile directly as a function of in-depth using high-resolution reflection energy loss spectroscopy (HR-REELS), which was compared with the band gap profile calculated based on the auger depth profile. The band gap profile is a double-graded band gap as a function of in-depth. The calculated band gap obtained from the auger depth profile seems to be larger than that by HR-REELS. Calculated band gaps are to measure the average band gap of the spatially different varying compositions with respect to considering its void fraction. But, the results obtained using HR-REELS are to be affected by the low band gap (i.e., out of void) rather than large one (i.e., near void). Our findings suggest an analytical method to directly determine the band gap profile as function of in-depth.

Pulse modulator developments in support of klystron testing at SLAC

International Nuclear Information System (INIS)

Koontz, R.F.; Cassel, R.; Lamare, J. de; Ficklin, D.; Gold, S.; Harris, K.

1993-01-01

Several families of high power klystrons in S- and X-Band are being developed in the Klystron Laboratory at SLAC. To support these developments, a number of new pulse modulators are being designed from scratch, or upgraded from existing laboratory test modulators. This paper outlines the modulator parameters available in the SLAC Klystron Laboratory, and discuss two new modulators that are under construction

Large-Signal Klystron Simulations Using KLSC

Science.gov (United States)

Carlsten, B. E.; Ferguson, P.

1997-05-01

We describe a new, 2-1/2 dimensional, klystron-simulation code, KLSC. This code has a sophisticated input cavity model for calculating the klystron gain with arbitrary input cavity matching and tuning, and is capable of modeling coupled output cavities. We will discuss the input and output cavity models, and present simulation results from a high-power, S-band design. We will use these results to explore tuning issues with coupled output cavities.

Study of nonlinear interaction between bunched beam and intermediate cavities in a relativistic klystron amplifier

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xu, Z.; Li, Z. H. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Tang, C. X. [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)

2012-07-15

In intermediate cavities of a relativistic klystron amplifier (RKA) driven by intense relativistic electron beam, the equivalent circuit model, which is widely adopted to investigate the interaction between bunched beam and the intermediate cavity in a conventional klystron design, is invalid due to the high gap voltage and the nonlinear beam loading in a RKA. According to Maxwell equations and Lorentz equation, the self-consistent equations for beam-wave interaction in the intermediate cavity are introduced to study the nonlinear interaction between bunched beam and the intermediate cavity in a RKA. Based on the equations, the effects of modulation depth and modulation frequency of the beam on the gap voltage amplitude and its phase are obtained. It is shown that the gap voltage is significantly lower than that estimated by the equivalent circuit model when the beam modulation is high. And the bandwidth becomes wider as the beam modulation depth increases. An S-band high gain relativistic klystron amplifier is designed based on the result. And the corresponding experiment is carried out on the linear transformer driver accelerator. The peak output power has achieved 1.2 GW with an efficiency of 28.6% and a gain of 46 dB in the corresponding experiment.

Study of nonlinear interaction between bunched beam and intermediate cavities in a relativistic klystron amplifier

Science.gov (United States)

Wu, Y.; Xu, Z.; Li, Z. H.; Tang, C. X.

2012-07-01

In intermediate cavities of a relativistic klystron amplifier (RKA) driven by intense relativistic electron beam, the equivalent circuit model, which is widely adopted to investigate the interaction between bunched beam and the intermediate cavity in a conventional klystron design, is invalid due to the high gap voltage and the nonlinear beam loading in a RKA. According to Maxwell equations and Lorentz equation, the self-consistent equations for beam-wave interaction in the intermediate cavity are introduced to study the nonlinear interaction between bunched beam and the intermediate cavity in a RKA. Based on the equations, the effects of modulation depth and modulation frequency of the beam on the gap voltage amplitude and its phase are obtained. It is shown that the gap voltage is significantly lower than that estimated by the equivalent circuit model when the beam modulation is high. And the bandwidth becomes wider as the beam modulation depth increases. An S-band high gain relativistic klystron amplifier is designed based on the result. And the corresponding experiment is carried out on the linear transformer driver accelerator. The peak output power has achieved 1.2 GW with an efficiency of 28.6% and a gain of 46 dB in the corresponding experiment.

Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

International Nuclear Information System (INIS)

Malashchonak, M.V.; Streltsov, E.A.; Mazanik, A.V.; Kulak, A.I.; Poznyak, S.K.; Stroyuk, O.L.; Kuchmiy, S.Ya.; Gaiduk, P.I.

2015-01-01

Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m 2 g −1 ) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y max = 90%; 0.1 M Na 2 S + 0.1 M Na 2 SO 3 ), but also in the sub-band-gap (SBG) range (Y max = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E U ) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E U = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E U = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E U = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles

Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Malashchonak, M.V., E-mail: che.malasche@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Gaiduk, P.I. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

2015-08-31

Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m{sup 2}g{sup −1}) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y{sub max} = 90%; 0.1 M Na{sub 2}S + 0.1 M Na{sub 2}SO{sub 3}), but also in the sub-band-gap (SBG) range (Y{sub max} = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E{sub U}) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E{sub U} = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E{sub U} = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E{sub U} = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles.

10 MW, L-Band Klystron for Accelerators

Energy Technology Data Exchange (ETDEWEB)

Read, Michael [Calabazas Creek Research, Inc., San Mateo, CA (United States); Ives, Robert L. [Calabazas Creek Research, Inc., San Mateo, CA (United States); Ferguson, Patrick [Calabazas Creek Research, Inc., San Mateo, CA (United States)

2016-03-07

This program developed a 10 MW, pulsed, Annular Beam Klystron (ABK) for accelerator applications. This is an alternative RF source to multiple beam klystrons MBKs), which are more complex and considerably more expensive. The ABK uses a single, annular cathode and a single beam tunnel with fundamental mode cavities. The operating specifications (voltage, efficiency, power, bndwidth, duty, etc.) are the same as for comparable MBKs.

High power klystrons for efficient reliable high power amplifiers

Science.gov (United States)

Levin, M.

1980-11-01

This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

PPM klystron operation in GLCTA

International Nuclear Information System (INIS)

Saeki, T.; Akemoto, M.; Shidara, T.

2004-01-01

High-gradient tests of X-band accelerator structure have been done with two solenoidal-type klystrons at Global Linear Collider Test Accelerator (GLCTA) facility in High Energy Accelerator Research Organization (KEK). In the GLCTA facility, a PPM-type klystron was installed and has been operated with dummy load from this April. In this article, the installation and the status of the PPM-type klystron operations are presented. (author)

Analysis of RF section of 250 kW CW C-Band high power klystron

International Nuclear Information System (INIS)

Badola, Richa; Kaushik, Meenu; Baloda, Suman; Kirti; Vrati; Lamba, O.S.; Joshi, L.M.

2012-01-01

Klystron is a microwave tube which is used as a power amplifier in various applications like radar, particle accelerators and thermonuclear reactors. The paper deals with the analysis of RF section of 250 kW CW C band high power klystron for 50 to 60 kV beam voltage The simulation is done using Poisson's superfish and AJ disk software's Design of cavity is done using superfish. The result of superfish is used to decide the dimensions of the geometry of the cavity and AJ disk is used to determined the centre to centre distances between the cavities in order to obtain the desired powers. (author)

HF electronic tubes. Technologies, grid tubes and klystrons

International Nuclear Information System (INIS)

Lemoine, Th.

2009-01-01

This article gives an overview of the basic technologies of electronic tubes: cathodes, electronic optics, vacuum and high voltage. Then the grid tubes, klystrons and inductive output tubes (IOT) are introduced. Content: 1 - context and classification; 2 - electronic tube technologies: cathodes, electronic optics, magnetic confinement (linear tubes), periodic permanent magnet (PPM) focussing, collectors, depressed collectors; 3 - vacuum technologies: vacuum quality, surface effects and interaction with electrostatic and RF fields, secondary emission, multipactor effect, thermo-electronic emission; 4 - grid tubes: operation of a triode, tetrodes, dynamic operation and classes of use, 'common grid' and 'common cathode' operation, ranges of utilisation and limitations, operation of a tetrode on unadjusted load, lifetime of a tetrode, uses of grid tubes; 5 - klystrons: operation, impact of space charge, multi-cavity klystrons, interaction efficiency, extended interaction klystrons, relation between interaction efficiency, perveance and efficiency, ranges of utilization and power limitations, multi-beam klystrons and sheet beam klystrons, operation on unadjusted load, klystron band pass and lifetime, uses; 6 - IOT: principle of operation, ranges of utilisation and limitations, interaction efficiency and depressed collector IOT, IOT lifetime and uses. (J.S.)

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Science.gov (United States)

Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

2012-08-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Energy Technology Data Exchange (ETDEWEB)

Bai Xianchen; Yang Jianhua; Zhang Jiande [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2012-08-15

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

International Nuclear Information System (INIS)

Bai Xianchen; Yang Jianhua; Zhang Jiande

2012-01-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

L-band pulsed klystron for the JHP

International Nuclear Information System (INIS)

Fukuda, S.; Takeuchi, Y.; Hisamatsu, H.; Anami, S.; Kihara, M.; Takahashi, A.

1994-01-01

An L-band high-power klystron for the JHP (6 MW output power and 600 μsec pulse width) was designed at KEK. High-power tests of the test diodes were performed up to a beam voltage of 140 kV, a pulse width of 600 μsec and a repetition rate of 50 pps. The capability to meet the specifications of the gun and the collector was confirmed. High-power tests of the rf window were also performed up to rf powers of 4 MW (600 μsec pulse width) and 5 MW (375 μsec pulse width). We obtained good results for an rf window using high-purity alumina (99.7%). The design considerations and manufacturing process are also described. Manufacturing a prototype tube has been completed and the tube is undergoing the high-power tests. (author)

Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

Energy Technology Data Exchange (ETDEWEB)

Bai Xianchen; Zhang Jiande; Yang Jianhua; Jin Zhenxing [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2012-12-15

Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.

Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

Science.gov (United States)

Bai, Xianchen; Zhang, Jiande; Yang, Jianhua; Jin, Zhenxing

2012-12-01

Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of ˜22 MW, an output power of ˜230 MW with the power gain of ˜10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than ±15° in a single shot, and phase jitter of ±11° is obtained within a series of shots with duration of about 40 ns.

Development of an X-Band 50 MW Multiple Beam Klystron

International Nuclear Information System (INIS)

Song Liqun; Ferguson, Patrick; Ives, R. Lawrence; Miram, George; Marsden, David; Mizuhara, Max

2003-01-01

Calabazas Creek Research, Inc. is developing an X-band 50 MW multiple beam klystron (MBK) on a DOE SBIR Phase II grant. The electrical design and preliminary mechanical design were completed on the Phase I. This MBK consists of eight discrete klystron circuits driven by eight electron beams located symmetrically on a circle with a radius of 6.3 cm. Each beam operates at 190 kV and 66 A. The eight beam electron gun is in development on a DOE SBIR Phase II grant. Each circuit consists of an input cavity, two gain cavities, three penultimate cavities, and a three cavity output circuit operating in the PI/2 mode. Ring resonators were initially proposed for the complete circuit; however, low beam -- wave interaction resulted in the necessity to use discrete cavities for all eight circuits. The input cavities are coupled via hybrid waveguides to ensure constant drive power amplitude and phase. The output circuits can either be combined using compact waveguide twists driving a TE01 high power window or combined into a TM04 mode converter driving the same TE01 window. The gain and efficiency for a single circuit has been optimized using KLSC, a 2 1/2D large signal klystron code. Simulations for a single circuit predict an efficiency of 53% for a single output cavity and 55% for the three cavity output resonator. The total RF output power for this MBK is 55 MW. During the Phase II emphasis will be given to cost reduction techniques resulting in a robust - high efficient - long life high power amplifier

Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S2 thin-film solar cells.

Science.gov (United States)

Sohn, So Hyeong; Han, Noh Soo; Park, Yong Jin; Park, Seung Min; An, Hee Sang; Kim, Dong-Wook; Min, Byoung Koun; Song, Jae Kyu

2014-12-28

The photophysical properties of CuInxGa1-xS2 (CIGS) thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties of these films and the electrical characteristics of solar cells fabricated using these films. Photophysical properties, such as the depth-dependent band gap and carrier lifetime, turn out to be at play in determining the energy conversion efficiency of solar cells. A double grading of the band gap in CIGS films enhances solar cell efficiency, even when defect states disturb carrier collection by non-radiative decay. The combinational stacking of different density films leads to improved solar cell performance as well as efficient fabrication because a graded band gap and reduced shunt current increase carrier collection efficiency. The photodynamics of minority-carriers suggests that the suppression of defect states is a primary area of improvement in CIGS thin films prepared by solution-based methods.

Commissioning of the First Klystron-Based X-Band Power Source at CERN

CERN Document Server

Kovermann, J; Curt, S; Doebert, S; Naon, M; McMonagle, G; Paju, E; Rey, S; Riddone, G; Schirm, K; Syratchev, I; Timeo, L; Wuensch, W; Hamdi, A; Peauger, FF; Eichner, J; Haase, A; Sprehn, D

2012-01-01

A new klystron based X-band rf power source operating at 11.994 GHz has been installed and started to be commissioned at CERN in collaboration with CEA Saclay and SLAC for CLIC accelerating structure tests. The system comprises a solid state high voltage modulator, an XL5 klystron developed by SLAC, a cavity based SLED type pulse compressor, the necessary low level rf system including rf diagnostics and interlocks and the surrounding vacuum, cooling and controls infrastructure. The system is designed to produce up to 50 MW rf pulses of 1500 ns pulse width and 50 Hz repetition rate. After pulse compression, up to 100 MW of rf power at 250 ns pulse width will be available in the structure test bunker. This paper describes in more detail this setup and the process of commissioning which is necessary to arrive at the design performance.

Development of an X-Band 50 MW Multiple Beam Klystron

Science.gov (United States)

Song, Liqun; Ferguson, Patrick; Ives, R. Lawrence; Miram, George; Marsden, David; Mizuhara, Max

2003-12-01

Calabazas Creek Research, Inc. is developing an X-band 50 MW multiple beam klystron (MBK) on a DOE SBIR Phase II grant. The electrical design and preliminary mechanical design were completed on the Phase I. This MBK consists of eight discrete klystron circuits driven by eight electron beams located symmetrically on a circle with a radius of 6.3 cm. Each beam operates at 190 kV and 66 A. The eight beam electron gun is in development on a DOE SBIR Phase II grant. Each circuit consists of an input cavity, two gain cavities, three penultimate cavities, and a three cavity output circuit operating in the PI/2 mode. Ring resonators were initially proposed for the complete circuit; however, low beam — wave interaction resulted in the necessity to use discrete cavities for all eight circuits. The input cavities are coupled via hybrid waveguides to ensure constant drive power amplitude and phase. The output circuits can either be combined using compact waveguide twists driving a TE01 high power window or combined into a TM04 mode converter driving the same TE01 window. The gain and efficiency for a single circuit has been optimized using KLSC, a 2 1/2D large signal klystron code. Simulations for a single circuit predict an efficiency of 53% for a single output cavity and 55% for the three cavity output resonator. The total RF output power for this MBK is 55 MW. During the Phase II emphasis will be given to cost reduction techniques resulting in a robust — high efficient — long life high power amplifier.

Towards double-functionalized small diamondoids: selective electronic band-gap tuning

International Nuclear Information System (INIS)

Adhikari, Bibek; Fyta, Maria

2015-01-01

Diamondoids are nanoscale diamond-like cage structures with hydrogen terminations, which can occur in various sizes and with a diverse type of modifications. In this work, we focus on the structural alterations and the effect of doping and functionalization on the electronic properties of diamondoids, from the smallest adamantane to heptamantane. The results are based on quantum mechanical calculations. We perform a self-consistent study, starting with doping the smallest diamondoid, adamantane. Boron, nitrogen, silicon, oxygen, and phosphorus are chosen as dopants at sites which have been previously optimized and are also consistent with the literature. At a next step, an amine- and a thiol- group are separately used to functionalize the adamantane molecule. We mainly focus on a double functionalization of diamondoids up to heptamantane using both these atomic groups. The effect of isomeration in the case of tetramantane is also studied. We discuss the higher efficiency of a double-functionalization compared to doping or a single-functionalization of diamondoids in tuning the electronic properties, such as the electronic band-gap, of modified small diamondoids in view of their novel nanotechnological applications. (paper)

Klystron Gun Arcing and Modulator Protection

International Nuclear Information System (INIS)

Gold, S

2004-01-01

The demand for 500 kV and 265 amperes peak to power an X-Band klystron brings up protection issues for klystron faults and the energy dumped into the arc from the modulator. This situation is made worse when more than one klystron will be driven from a single modulator, such as the existing schemes for running two and eight klystrons. High power pulsed klystrons have traditionally be powered by line type modulators which match the driving impedance with the load impedance and therefore current limit at twice the operating current. Multiple klystrons have the added problems of a lower modulator source impedance and added stray capacitance, which converts into appreciable energy at high voltages like 500kV. SLAC has measured the energy dumped into klystron arcs in a single and dual klystron configuration at the 400 to 450 kV level and found interesting characteristics in the arc formation. The author will present measured data from klystron arcs powered from line-type modulators in several configurations. The questions arise as to how the newly designed solid-state modulators, running multiple tubes, will react to a klystron arc and how much energy will be dumped into the arc

Design and analysis of a radio frequency extractor in an S-band relativistic klystron amplifier

Energy Technology Data Exchange (ETDEWEB)

Zhang Zehai; Zhang Jun; Shu Ting; Qi Zumin [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2012-09-15

A radio frequency (RF) extractor converts the energy of a strongly modulated intense relativistic electron beam (IREB) into the energy of high power microwave in relativistic klystron amplifier (RKA). In the aim of efficiently extracting the energy of the modulated IREB, a RF extractor with all round coupling structure is proposed. Due to the all round structure, the operating transverse magnetic mode can be established easily and its resonant property can be investigated with an approach of group delay time. Furthermore, the external quality factor can be low enough. The design and analysis of the extractor applied in an S-band RKA are carried out, and the performance of the extractor is validated with three-dimensional (3D) particle-in-cell simulations. The extraction efficiency reaches 27% in the simulation with a totally 3D model of the whole RKA. The primary experiments are also carried out and the results show that the RF extractor with the external quality factor of 7.9 extracted 22% of the beam power and transformed it into the high power microwave. Better results are expected after the parasitic mode between the input and middle cavities is suppressed.

Design and analysis of a radio frequency extractor in an S-band relativistic klystron amplifier

Science.gov (United States)

Zhang, Zehai; Zhang, Jun; Shu, Ting; Qi, Zumin

2012-09-01

A radio frequency (RF) extractor converts the energy of a strongly modulated intense relativistic electron beam (IREB) into the energy of high power microwave in relativistic klystron amplifier (RKA). In the aim of efficiently extracting the energy of the modulated IREB, a RF extractor with all round coupling structure is proposed. Due to the all round structure, the operating transverse magnetic mode can be established easily and its resonant property can be investigated with an approach of group delay time. Furthermore, the external quality factor can be low enough. The design and analysis of the extractor applied in an S-band RKA are carried out, and the performance of the extractor is validated with three-dimensional (3D) particle-in-cell simulations. The extraction efficiency reaches 27% in the simulation with a totally 3D model of the whole RKA. The primary experiments are also carried out and the results show that the RF extractor with the external quality factor of 7.9 extracted 22% of the beam power and transformed it into the high power microwave. Better results are expected after the parasitic mode between the input and middle cavities is suppressed.

Development of the C-band (5712 MHz) 50 MW class PPM klystron (2)

International Nuclear Information System (INIS)

Matsumoto, H.; Shintake, T.; Ohkubo, Y.; Taoka, H.; Ohhashi, K.; Kakuno, K.

2001-01-01

Hot isostatic pressing (HIP) technique has been firstly applied to fabricate a magnetic circuit in a PPM klystron. Simply stacking disks of the magnetic stainless-steel (Mag-SUS) and oxygen-free-copper (OFC) alternatively, and processing in a HIP vessel filled with pressurised Ar-gas at 1200-kgf/cm 2 and temperature of 800degC for 2 hours, they were bonded in one block with diffusion bonding. No brazing-alloys were used in this process. After machining the rf-cavities and beam drift-tube on the bonded PPM stack, they were assembled together in one body by means of conventional brazing method. The C-band PPM klystron based on this technique was fabricated in the course of the Linear Collider R and D. Out-put power of 37 MW was generated with 2.5-μsec pulse width and 50 pps repetition rate. (author)

Band gap engineering of MoS{sub 2} upon compression

Energy Technology Data Exchange (ETDEWEB)

López-Suárez, Miquel, E-mail: miquel.lopez@nipslab.org [NiPS Laboratory, Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, 06123 Perugia (Italy); Neri, Igor [NiPS Laboratory, Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, 06123 Perugia (Italy); INFN Sezione di Perugia, via Pascoli, 06123 Perugia (Italy); Rurali, Riccardo [Institut de Ciència de Materials de Barcelona (ICMAB–CSIC) Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

2016-04-28

Molybdenum disulfide (MoS{sub 2}) is a promising candidate for 2D nanoelectronic devices, which shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS{sub 2} upon both compressive and tensile strains with first-principles density-functional calculations for different number of layers. The results show that the band-gap can be engineered for experimentally attainable strains (i.e., ±0.15). However, compressive strain can result in bucking that can prevent the use of large compressive strain. We then studied the stability of the compression, calculating the critical strain that results in the on-set of buckling for free-standing nanoribbons of different lengths. The results demonstrate that short structures, or few-layer MoS{sub 2}, show semi-conductor to metal transition upon compressive strain without bucking.

Improving the efficiency of microwave devices with a double output cavity

International Nuclear Information System (INIS)

Eppley, K.R.; Herrmannsfeldt, W.B.; Lee, T.G.

1986-05-01

Double output cavities have been used experimentally to increase the efficiency of high-power klystrons. We have used particle-in-cell simulations with the 2 + 1/2 dimensional code MASK to optimize the design of double output cavities for the lasertron and the 50 MW klystron under development at SLAC. We discuss design considerations for double output cavities (e.g., optimum choice of voltages and phases, efficiency, wall interception, breakdown). We describe how one calculates the cavity impedance matrix from the gap voltages and phases. Simulation results are compared to experience with the 150 MW klystron

High Peak Power Test and Evaluation of S-band Waveguide Switches

Science.gov (United States)

Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

1997-05-01

The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

Design of a multi beam klystron cavity from its single beam parameters

Energy Technology Data Exchange (ETDEWEB)

Kant, Deepender, E-mail: dkc@ceeri.ernet.in; Joshi, L. M. [CSIR-Central Electronics Engineering Research Institute, Pilani (India); Janyani, Vijay [Department of ECE, MNIT, Jaipur (India)

2016-03-09

The klystron is a well-known microwave amplifier which uses kinetic energy of an electron beam for amplification of the RF signal. There are some limitations of conventional single beam klystron such as high operating voltage, low efficiency and bulky size at higher power levels, which are very effectively handled in Multi Beam Klystron (MBK) that uses multiple low purveyance electron beams for RF interaction. Each beam propagates along its individual transit path through a resonant cavity structure. Multi-Beam klystron cavity design is a critical task due to asymmetric cavity structure and can be simulated by 3D code only. The present paper shall discuss the design of multi beam RF cavities for klystrons operating at 2856 MHz (S-band) and 5 GHz (C-band) respectively. The design approach uses some scaling laws for finding the electron beam parameters of the multi beam device from their single beam counter parts. The scaled beam parameters are then used for finding the design parameters of the multi beam cavities. Design of the desired multi beam cavity can be optimized through iterative simulations in CST Microwave Studio.

Design of a multi beam klystron cavity from its single beam parameters

International Nuclear Information System (INIS)

Kant, Deepender; Joshi, L. M.; Janyani, Vijay

2016-01-01

The klystron is a well-known microwave amplifier which uses kinetic energy of an electron beam for amplification of the RF signal. There are some limitations of conventional single beam klystron such as high operating voltage, low efficiency and bulky size at higher power levels, which are very effectively handled in Multi Beam Klystron (MBK) that uses multiple low purveyance electron beams for RF interaction. Each beam propagates along its individual transit path through a resonant cavity structure. Multi-Beam klystron cavity design is a critical task due to asymmetric cavity structure and can be simulated by 3D code only. The present paper shall discuss the design of multi beam RF cavities for klystrons operating at 2856 MHz (S-band) and 5 GHz (C-band) respectively. The design approach uses some scaling laws for finding the electron beam parameters of the multi beam device from their single beam counter parts. The scaled beam parameters are then used for finding the design parameters of the multi beam cavities. Design of the desired multi beam cavity can be optimized through iterative simulations in CST Microwave Studio.

Inverse problem of the vibrational band gap of periodically supported beam

Science.gov (United States)

Shi, Xiaona; Shu, Haisheng; Dong, Fuzhen; Zhao, Lei

2017-04-01

The researches of periodic structures have a long history with the main contents confined in the field of forward problem. In this paper, the inverse problem is considered and an overall frame is proposed which includes two main stages, i.e., the band gap criterion and its optimization. As a preliminary investigation, the inverse problem of the flexural vibrational band gap of a periodically supported beam is analyzed. According to existing knowledge of its forward problem, the band gap criterion is given in implicit form. Then, two cases with three independent parameters, namely the double supported case and the triple one, are studied in detail and the explicit expressions of the feasible domain are constructed by numerical fitting. Finally, the parameter optimization of the double supported case with three variables is conducted using genetic algorithm aiming for the best mean attenuation within specified frequency band.

Suppressing band gap of MoS{sub 2} by the incorporation of four- and eight-membered rings

Energy Technology Data Exchange (ETDEWEB)

Zhu, Liyan; Zhang, Tingting, E-mail: ttzhang@hytc.edu.cn [Huaiyin Normal University, School of Physics and Electronic & Electrical Engineering, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems (China)

2015-05-15

A stable planar allotrope of MoS{sub 2}, formed by introducing four- and eight-membered rings into its hexagonal network (H468), is identified to be a narrow direct-band-gap semiconductor by first principle calculations, which is remarkably different from the large band gap semiconductor of conventional MoS{sub 2} and also the zero band gap allotrope consisting of four- and eight-membered rings (H48) only. The medium-sized direct band gap indicates that H468 would find applications in nanoelectronics and near-infrared optoelectronic devices. Furthermore, the distinctive simulated scanning tunneling microscope images under positive and negative biases might be a unique characteristic for the experimental identification of such an allotrope of MoS{sub 2}.

Design of an RF window for L-band CW klystron based on thermal-stress analysis

International Nuclear Information System (INIS)

Yamaguchi, Seiya; Sato, Isamu; Konashi, Kenji; Ohshika, Junji.

1993-01-01

Design of klystron RF window has been performed based on a thermal-stress analysis for L-band CW electron linac for nuclear wastes transmutation. It was shown that the hoop stress for a modified disk is 46% of that of normal disk. Thermal load test has been done which indicated that the modified disk is proof against power twice as much as that for the normal disk. (author)

Photonic band gaps of porous solids

International Nuclear Information System (INIS)

Biswas, R.; Sigalas, M. M.; Subramania, G.; Soukoulis, C. M.; Ho, K.-M.

2000-01-01

Colloidal inverse photonic crystals composed of ordered lattices of air spheres in a high dielectric background are found to have three-dimensional photonic gaps for face-centered cubic, hexgaonal close-packed, and double hexagonal close-packed stacking sequences. Conditions for the occurrence of the complete gap are a sufficient dielectric contrast and a geometry near close packed. Although the lower pseudogaps of these stacking sequences differ, the lowest stop band in the stacking direction is insensitive to the stacking sequence; hence their experimental reflection should be similar. Transmission calculations with structural disorder show the lower pseudogap is relatively unaffected but the higher gap is very difficult to observe with moderate disorder. (c) 2000 The American Physical Society

CdS_xTe_1_-_x ternary semiconductors band gaps calculation using ground state and GW approximations

International Nuclear Information System (INIS)

Kheloufi, Nawal; Bouzid, Abderrazak

2016-01-01

We present band gap calculations of zinc-blende ternary CdS_xTe_1_-_x semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd"+"2"0 pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd"2"0"+ pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd"1"2"+ and the LDA within Cd"2"0"+ pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS_xTe_1_-_x compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

Proceedings of wide band gap semiconductors

International Nuclear Information System (INIS)

Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

1992-01-01

This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

Sheet Beam Klystron Instability Analysis

International Nuclear Information System (INIS)

Bane, K.

2009-01-01

Using the principle of energy balance we develop a 2D theory for calculating growth rates of instability in a two-cavity model of a sheet beam klystron. An important ingredient is a TE-like mode in the gap that also gives a longitudinal kick to the beam. When compared with a self-consistent particle-in-cell calculation, with sheet beam klystron-type parameters, agreement is quite good up to half the design current, 65 A; at full current, however, other, current-dependent effects come in and the results deviate significantly

Ka-Band Klystron Amplifier for CUBESATs, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We offer an ultra-compact klystron amplifier for remote sensing on CubeSats. It will operate at 35.7 GHz, have 400 MHz bandwidth, and output greater than 32 watts...

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

International Nuclear Information System (INIS)

Baillie, Devin; Aubin, J. St.; Fallone, B. G.; Steciw, S.

2013-01-01

Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d max is at 2.15 cm for a 10 × 10 cm 2 field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source.

Science.gov (United States)

Baillie, Devin; St Aubin, J; Fallone, B G; Steciw, S

2013-04-01

To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV∕m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show dmax is at 2.15 cm for a 10 × 10 cm(2) field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

Energy Technology Data Exchange (ETDEWEB)

Baillie, Devin [Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Aubin, J. St. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Fallone, B. G. [Department of Physics, University of Alberta, 11322-89 Avenue, Edmonton, Alberta T6G 2G7 (Canada); Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Steciw, S. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada)

2013-04-15

Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d{sub max} is at 2.15 cm for a 10 Multiplication-Sign 10 cm{sup 2} field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

Science.gov (United States)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

Klystron

CERN Multimedia

1990-01-01

This klystron has been specially designed to be used as an RF source in particle accelertators. It is a five-cavity, high-gain, sealed-off klystron amplifier, able to deliver 17.5 kW of minimum average power and 35 MW minimum peak power at 2998.5 MHz. The maximum RF pulse duration available from this high-power klystron is 4.5 µsec. This klystron includes an ion pump, which ensures a continuous high vacuum. Used in the LEP injector LP1.

Optical band gap energy and ur bach tail of CdS:Pb2+ thin films

Energy Technology Data Exchange (ETDEWEB)

Chavez, M.; Juarez, H.; Pacio, M. [Universidad Autonoma de Puebla, Instituto de Ciencias, Centro de Investigacion en Dispositivos Semiconductores, Av. 14 Sur, Col. Jardines de San Manuel, Ciudad Universitaria, Puebla, Pue. (Mexico); Gutierrez, R.; Chaltel, L.; Zamora, M.; Portillo, O. [Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Laboratorio de Materiales, Apdo. Postal 1067, 72001 Puebla, Pue. (Mexico); Mathew, X., E-mail: osporti@yahoo.mx [UNAM, Instituto de Energias Renovables, Temixco, Morelos (Mexico)

2016-11-01

Pb S-doped CdS nano materials were successfully synthesized using chemical bath. Transmittance measurements were used to estimate the optical band gap energy. Tailing in the band gap was observed and found to obey Ur bach rule. The diffraction X-ray show that the size of crystallites is in the ∼33 nm to 12 nm range. The peaks belonging to primary phase are identified at 2θ = 26.5 degrees Celsius and 2θ = 26.00 degrees Celsius corresponding to CdS and Pb S respectively. Thus, a shift in maximum intensity peak from 2θ = 26.4 to 28.2 degrees Celsius is clear indication of possible transformation of cubic to hexagonal phase. Also peaks at 2θ = 13.57, 15.9 degrees Celsius correspond to lead perchlorate thiourea. The effects on films thickness and substrate doping on the band gap energy and the width on tail were investigated. Increasing doping give rise to a shift in optical absorption edge ∼0.4 eV. (Author)

Two generations of klystrons reunited

CERN Multimedia

Katarina Anthony

2015-01-01

As the newest accelerator on the block, Linac4 is a hotbed of fresh technology and innovation. But among its many new elements you’ll find some familiar pieces, including eleven klystrons from CERN’s former flagship, LEP.   View of the Linac4 hall. The LEP klystrons (front and centre of the image) are surrounded by grey lead shielding. (Image: Suitbert Ramberger.) The Linac4 accelerator is powered by both new, state-of-the-art klystrons and former LEP klystrons. In fact, the first Drift Tube Linac (DTL) module is powered completely by these LEP klystrons. The last of the DTL modules has only just been installed in the Linac4 tunnel – a milestone that will soon take the accelerator up to 50 MeV, allowing it to act as a back-up machine for Linac2 for a few years before the complete handover to the CERN accelerator chain. It’s been a long journey to this point. Linac4 was first conceived in the early 2000s, and its design overlapped with the end of th...

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

Energy Technology Data Exchange (ETDEWEB)

Gupta, Yashika [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Department of Electronic Science, University of Delhi-South Campus, New Delhi 110021 (India); Arun, P., E-mail: arunp92@physics.du.ac.in [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Naudi, A.A.; Walz, M.V. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Instituto de Física del Litoral (CONICET-UNL), Guemes 3450, 3000 Santa Fe (Argentina)

2016-08-01

Tin sulphide nano-crystalline thin films were fabricated on glass and Indium Tin Oxide (ITO) substrates by thermal evaporation method. The crystal structure orientation of the films was found to be dependent on the substrate. Residual stress existed in the films due to these orientations. This stress led to variation in lattice parameter. The nano-crystalline grain size was also found to vary with film thickness. A plot of band-gap with grain size or with lattice parameter showed the existence of a family of curves. This implied that band-gap of SnS films in the preview of the present study depends on two parameters, lattice parameter and grain size. The band-gap relation with grain size is well known in the nano regime. Experimental data fitted well with this relation for the given lattice constants. The manuscript uses theoretical structure calculations for different lattice constants and shows that the experimental data follows the trend. Thus, confirming that the band gap has a two variable dependency. - Highlights: • Tin sulphide films are grown on glass and ITO substrates. • Both substrates give differently oriented films. • The band-gap is found to depend on grain size and lattice parameter. • Using data from literature, E{sub g} is shown to be two parameter function. • Theoretical structure calculations are used to verify results.

CdS{sub x}Te{sub 1-x} ternary semiconductors band gaps calculation using ground state and GW approximations

Energy Technology Data Exchange (ETDEWEB)

Kheloufi, Nawal; Bouzid, Abderrazak, E-mail: a_bouzid34@hotmail.com

2016-06-25

We present band gap calculations of zinc-blende ternary CdS{sub x}Te{sub 1-x} semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd{sup +20} pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd{sup 20+} pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd{sup 12+} and the LDA within Cd{sup 20+} pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS{sub x}Te{sub 1-x} compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

Improvements in X-band transmitter phase stability through Klystron body temperature regulation

Science.gov (United States)

Perez, R. M.

1992-01-01

This article describes the techniques used and experimental results obtained in improving transmitter stability by control of the klystron body temperature. Related work in the measurement of klystron phase control parameters (pushing factors) is also discussed. The contribution of wave guide temperature excursions to uplink phase stability is presented. Suggestions are made as to the direction of future work in this area.

Sub-band-gap laser micromachining of lithium niobate

DEFF Research Database (Denmark)

Christensen, F. K.; Müllenborn, Matthias

1995-01-01

method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric...

Band Gap Grading of Stacked Cu(In,Ga)S{sub 2} Thin Films

Energy Technology Data Exchange (ETDEWEB)

Jeong, Seonghyun; Sohn, So Hyeong; Shim, Hyeong Seop; Park, Seung Min; Song, Jae Kyu [Kyung Hee University, Seoul (Korea, Republic of); Min, Byoung Koun [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

2016-01-15

The band gap energy of CIGS, which depends on the composition variation and strain effect, can influence the collection and recombination of photocarriers. The solar cell efficiency is improved by the graded band gap in the absorber layer due to the enhanced carrier collection and the reduced carrier recombination. In our previous study, the photovoltaic performance of solar cells was affected by the stacking combination of layers, where the solar cell with dense-bottom and porous-top layers showed better performance than that with a reversely stacked structure. We studied the stacking effect of CIGS thin films. The stacking did not change E {sub g} of each layer, which led to the double grading of E {sub g} along the depth of the stacked films, mainly due to the difference in E {sub g} between the dense and porous layers. The higher degree of the grading in A+B+A improved J {sub sc}. However, the higher density of the defect states in A+B+A reduced V {sub oc}, which was inferred by the short lifetime of the carriers and the broad bandwidth of photoluminescence. Overall, the efficiency of A+B+A was only slightly improved compared to that of B+A.

Band gap effects of hexagonal boron nitride using oxygen plasma

International Nuclear Information System (INIS)

Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

2014-01-01

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing

Band gap effects of hexagonal boron nitride using oxygen plasma

Energy Technology Data Exchange (ETDEWEB)

Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2014-04-21

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

Latest Results in SLAC 75-MW PPM Klystrons

International Nuclear Information System (INIS)

Sprehn, D.; Caryotakis, G.; Haase, A.; Jongewaard, E.; Laurent, L.; Pearson, C.; Phillips, R.

2006-01-01

75 MW X-band klystrons utilizing Periodic Permanent Magnet (PPM) focusing have been undergoing design, fabrication and testing at the Stanford Linear Accelerator Center (SLAC) for almost nine years. The klystron development has been geared toward realizing the necessary components for the construction of the Next Linear Collider (NLC). The PPM devices built to date which fit this class of operation consist of a variety of 50 MW and 75 MW devices constructed by SLAC, KEK (Tsukuba, Japan) and industry. All these tubes follow from the successful SLAC design of a 50 MW PPM klystron in 1996. In 2004 the latest two klystrons were constructed and tested with preliminary results reported at EPAC2004. The first of these two devices was tested to the full NLC specifications of 75 MW, 1.6 microseconds pulse length, and 120 Hz. This 14.4 kW average power operation came with a tube efficiency >50%. The most recent testing of these last two devices will be presented here. Design and manufacturing issues of the latest klystron, due to be tested by the Fall of 2005, are also discussed

RF extraction issues in the relativistic klystron amplifiers

Science.gov (United States)

Serlin, Victor; Friedman, Moshe; Lampe, Martin; Hubbard, Richard F.

1994-05-01

Relativistic klystron amplifiers (RKAs) were successfully operated at NRL in several frequency regimes and power levels. In particular, an L-band RKA was optimized for high- power rf extraction into the atmosphere and an S-band RKA was operated, both in a two-beam and a single-beam configuration. At L-band the rf extraction at maximum power levels (>= 15 GW) was hindered by pulse shortening and poor repeatability. Preliminary investigation showed electron emission in the radiating horn, due to very high voltages associated with the multi-gigawatt rf power levels. This electron current constituted an electric load in parallel with the radiating antenna, and precipitated the rf pulse collapse. At S-band the peak extracted power reached 1.7 GW with power efficiency approximately 50%. However, pulse shortening limited the duration to approximately 50 nanoseconds. The new triaxial RKA promises to solve many of the existing problems.

Recent performance, lifetime, and failure modes of the 5045 klystron population at SLAC

International Nuclear Information System (INIS)

Koontz, R.F.; Lee, T.G.; Pearson, C.; Vlieks, A.E.

1992-08-01

The 65 MW S-Band klystrons (5045) used to power SLC have been in service for over seven years. Currently, 244 of these tubes are in place on the accelerator, operating full power at 120 pulses per second. Enough tubes have now reached end of life, or experienced other failures to allow a good analysis of failure modes, and to project average lifetime for this type of tube. This paper describes the various modes of failure seen in klystrons rammed from SLC service, and provides data on expected lifetime from current production based on accumulated SLC operating experience

Recent performance, lifetime, and failure modes or the 5045 klystron population at SLAC

International Nuclear Information System (INIS)

Koontz, R.F.; Lee, T.G.; Pearson, C.; Vlieks, A.E.

1992-01-01

The 65 MW S-Band klystrons (5045) used to power SLC have been in service for over seven years. Currently, 244 of these tubes are in place on the accelerator, operating full power at 120 pulses per second. Enough tubes have now reached cathode end of life, or experienced other failures to allow a good analysis of failure modes, and to project average lifetime for this type of tube. This paper describes the various modes of failure seen in klystrons returned from SLC service, and provides data on expected lifetime from current production based on accumulated SLC operating experience. 3 refs., 6 figs

Tunneling effect on double potential barriers GaAs and PbS

Science.gov (United States)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

Simulation of Oscillations in High Power Klystrons

CERN Document Server

Ko, K

2003-01-01

Spurious oscillations can seriously limit a klystron's performance from reaching its design specifications. These are modes with frequencies different from the drive frequency, and have been found to be localized in various regions of the tube. If left unsuppressed, such oscillations can be driven to large amplitudes by the beam. As a result, the main output signal may suffer from amplitude and phase instabilities which lead to pulse shortening or reduction in power generation efficiency, as observed during the testing of the first 150MW S-band klystron, which was designed and built at SLAC as a part of an international collaboration with DESY. We present efficient methods to identify suspicious modes and then test their possibility of oscillation. In difference to [3], where each beam-loaded quality-factor Qbl was calculated by time-consuming PIC simulations, now only tracking-simulations with much reduced cpu-time and less sensitivity against noise are applied. This enables the determination of Qbl for larg...

The theoretical study of the optical klystron free electron laser

International Nuclear Information System (INIS)

Yang Zhenhua

2001-01-01

The work of the theoretical study and numerical simulation of optical klystron free electron laser is supported by National 863 Research Development Program and National Science Foundation of China. The object of studying UV band free electron laser (FEL) is to understand the physical law of optical klystron FEL and to gain experience for design. A three-dimensional code OPFEL are made and it is approved that the code is correct completely. The magnetic field of the optical klystron, the energy modulation of the electron beam, the density modulation of the electron beam, spontaneous emission of the electron beam in optical klystron, the harmonic super-radiation of the electron beam, and the effects of the undulator magnetic field error on modulation of the electron beam energy are simulated. These results are useful for the future experiments

Band gap engineering for graphene by using Na+ ions

International Nuclear Information System (INIS)

Sung, S. J.; Lee, P. R.; Kim, J. G.; Ryu, M. T.; Park, H. M.; Chung, J. W.

2014-01-01

Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E g ) at DP in a controlled way by depositing positively charged Na + ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na + ions is found to deplete the π* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E g . The band gap increases with increasing Na + coverage with a maximum E g ≥0.70 eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na + ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na + ions, which may play a vital role in utilizing graphene in future nano-electronic devices.

Composition-tuned band gap energy and refractive index in GaS{sub x}Se{sub 1−x} layered mixed crystals

Energy Technology Data Exchange (ETDEWEB)

Isik, Mehmet, E-mail: mehmet.isik@atilim.edu.tr [Department of Electrical and Electronics Engineering, Atilim University, 06836, Ankara (Turkey); Gasanly, Nizami [Department of Physics, Middle East Technical University, 06800, Ankara (Turkey); Virtual International Scientific Research Centre, Baku State University, 1148, Baku (Azerbaijan)

2017-04-01

Transmission and reflection measurements on GaS{sub x}Se{sub 1−x} mixed crystals (0 ≤ x ≤ 1) were carried out in the 400–1000 nm spectral range. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance and reflectance. The compositional dependence of band gap energy revealed that as sulfur (selenium) composition is increased (decreased) in the mixed crystals, band gap energy increases quadratically from 1.99 eV (GaSe) to 2.55 eV (GaS). Spectral dependencies of refractive indices of the mixed crystals were plotted using the reflectance spectra. It was observed that refractive index decreases nearly in a linear behavior with increasing band gap energy for GaS{sub x}Se{sub 1−x} mixed crystals. Moreover, the composition ratio of the mixed crystals was obtained from the energy dispersive spectroscopy measurements. The atomic compositions of the studied crystals are well-matched with composition x increasing from 0 to 1 by intervals of 0.25. - Highlights: • Transmission and reflection experiments were performed on GaS{sub x}Se{sub 1−x} mixed crystals. • Derivative spectra of transmittance and reflectance were used for analyses. • Compositional dependence of band gap energy and refractive index were reported.

Formation of Degenerate Band Gaps in Layered Systems

Directory of Open Access Journals (Sweden)

Alexey P. Vinogradov

2012-06-01

Full Text Available In the review, peculiarities of spectra of one-dimensional photonic crystals made of anisotropic and/or magnetooptic materials are considered. The attention is focused on band gaps of a special type—the so called degenerate band gaps which are degenerate with respect to polarization. Mechanisms of formation and properties of these band gaps are analyzed. Peculiarities of spectra of photonic crystals that arise due to the linkage between band gaps are discussed. Particularly, it is shown that formation of a frozen mode is caused by linkage between Brillouin and degenerate band gaps. Also, existence of the optical Borrmann effect at the boundaries of degenerate band gaps and optical Tamm states at the frequencies of degenerate band gaps are analyzed.

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

Science.gov (United States)

Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

2015-09-01

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

Mode control in a high-gain relativistic klystron amplifier

Science.gov (United States)

Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

2010-05-01

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

An immersed field cluster klystron

International Nuclear Information System (INIS)

Palmer, R.B.; Herrmannsfeldt, W.B.; Eppley, K.R.

1989-08-01

Future linear colliders have a need for high power, high frequency, and short-pulse radio frequency sources. The proposed ''cluster klystron'' should give over 1 GW of 12 GHz radio frequency power, can employ direct current or a long high-voltage pulse, but can be gated to give pulses down to a few tens of nanoseconds. The device consists of 42 parallel 100 A channels. Each channel is fed from an individual magnetron-type gun employing a common 50 kV mod-anode. The beams are accelerated to 400 kV in common dc accelerating gaps and fed into the 42 separate klystron channels. Focusing of all channels is achieved by a single overall 4 kG magnetic field. Simulations of expected performance suggest that the efficiency could be above 70%. 10 refs., 6 figs., 5 tabs

Development of high power klystron. 3. Development of klystron No.2

International Nuclear Information System (INIS)

Hirano, K.; Wang, Y.L.; Sato, I.

2000-08-01

A high power klystron has been developed as the RF source of the high power CW electron linac (10 MeV, 100 mA, 1.249135 GHz). CW power of 1.2 MW and efficiencies over 65% at a beam voltage 85 kV were the design goal. We developed a long pill-box type beryllia window (long pill-box window) withstood the RF power of 1.7 MW (CW) and replaced the standard pill-box window of the prototype klystron with long pill-box window. The high power RF test was carried out with the converted klystron. This klystron has achieved CW RF power of 885 kW and efficiency of 47% at beam voltage of 85 kV. This paper describes key points of the designs to achieve the RF power over 1.2 MW and results of the high power RF test of the second klystron, which has been optimized by simulation codes to improve better efficiency. The second klystron has achieved the maximum efficiency of 56.5% with CW output power of 782 kW at a beam voltage of 80 kV and a cathode current of 20.4 A in present. The third klystron will be manufactured to reflect results of this test. (author)

One-dimensional disk model simulation for klystron design

International Nuclear Information System (INIS)

Yonezawa, H.; Okazaki, Y.

1984-05-01

In 1982, one of the authors (Okazaki), of Toshiba Corporation, wrote a one-dimensional, rigid-disk model computer program to serve as a reliable design tool for the 150 MW klystron development project. This is an introductory note for the users of this program. While reviewing the so-called disk programs presently available, hypotheses such as gridded interaction gaps, a linear relation between phase and position, and so on, were found. These hypotheses bring serious limitations and uncertainties into the computational results. JPNDISK was developed to eliminate these defects, to follow the equations of motion as rigorously as possible, and to obtain self-consistent solutions for the gap voltages and the electron motion. Although some inaccuracy may be present in the relativistic region, JPNDISK, in its present form, seems a most suitable tool for klystron design; it is both easy and inexpensive to use

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2015-09-14

By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

Multi-flexural band gaps in an Euler–Bernoulli beam with lateral local resonators

Energy Technology Data Exchange (ETDEWEB)

Wang, Ting, E-mail: WT323@mail.nwpu.edu.cn [School of Marine Science and Technology, Northwestern Polytechnical University, Xi' an, Shaanxi, 710072 (China); College of Engineering and Computer Science, The Australian National University, ACT, 2600 (Australia); Sheng, Mei-Ping [School of Marine Science and Technology, Northwestern Polytechnical University, Xi' an, Shaanxi, 710072 (China); Qin, Qing-Hua [College of Engineering and Computer Science, The Australian National University, ACT, 2600 (Australia)

2016-02-05

Flexural vibration suppression in an Euler–Bernoulli beam with attached lateral local resonators (LLR) is studied theoretically and numerically. Hamilton's principle and Bloch's theorem are employed to derive the dispersion relation which reveals that two band gaps are generated. Within both band gaps, the flexural waves are partially transformed into longitudinal waves through a four-link-mechanism and totally blocked. The band gaps can be flexibly tuned by changing the geometry parameter of the four-link-mechanism and the spring constants of the resonators. Frequency response function (FRF) from finite element analysis via commercial software of ANSYS shows large flexural wave attenuation within the band gaps and the effect of damping from the LLR substructures which helps smooth and lower the response peaks at the sacrifice of the band gap effect. The existence of the multi-flexural band gaps can be exploited for the design of flexural vibration control of beams. - Highlights: • A metamaterial beam with lateral local resonance is proposed. • The metamaterial beam can generate multi-band gaps for flexural wave suppression. • The substructure can transform the flexural wave into longitudinal wave and absorb the waves. • Damping from different part has different influence on the band gaps. • The design of the metamaterial beam can be used for multi-flexural vibration control.

Detection of X-ray due to gun arcing of high power klystron

International Nuclear Information System (INIS)

Vogel, Vladimir; Matsumoto, Shuji

2004-01-01

X-ray due to a klystron gun arching was monitored by a detector consists of a plastic scintillation fiber and a photo-multiplier. Observation of the X-ray was done during the processing run of an X-band klystron. A clear signal of X-ray burst is observed when the gun arcing occurs. Possibility of the fast protection for a pulse modulator from the gun arcing is discussed. (author)

High-power picosecond pulse delivery through hollow core photonic band gap fibers

DEFF Research Database (Denmark)

Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

2016-01-01

We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS_{2}.

Science.gov (United States)

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J; Schuck, P James

2017-08-25

Optoelectronic excitations in monolayer MoS_{2} manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena-critical to both many-body physics exploration and device applications-presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS2

Science.gov (United States)

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S.; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J.; Schuck, P. James

2017-08-01

Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena—critical to both many-body physics exploration and device applications—presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

Energy Technology Data Exchange (ETDEWEB)

Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Miyokawa, Norihiko; Sekiya, Takumi; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

2016-09-01

We fabricated amorphous oxide semiconductor films, a-(Ga{sub 1–x}Zn{sub x})O{sub y}, at room temperature on glass, which have widely tunable band gaps (E{sub g}) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm{sup 2} V{sup −1} s{sup −1} was obtained for E{sub g} = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E{sub g} with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. - Highlights: • Incorporation of H/H{sub 2}O stabilizes the amorphous phase. • Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated. • The increase in band gap comes mostly from the deepening of the valence band maximum level. • Donor level is more likely aligned to the valence band maximum level.

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

Science.gov (United States)

Wu, Yang; Xie, Hong-Quan; Xu, Zhou

2014-01-01

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

Pulse to pulse klystron diagnosis system

International Nuclear Information System (INIS)

Nowak, J.; Davidson, V.; Genova, L.; Johnson, R.; Reagan, D.

1981-03-01

This report describes a system used to study the behavior of SLAC high powered klystrons operating with a twice normal pulse width of 5 μs. At present, up to eight of the klystrons installed along the accelerator can be operated with long pulses and monitored by this system. The report will also discuss some of the recent findings and investigations

Micromachined millimeter-wave photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

1994-01-01

We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

Utilization of a Vircator to drive a High Power Relativistic Klystron Amplifier

Science.gov (United States)

Gardelle, J.; Bardy, J.; Cassany, B.; Desanlis, T.; Eyl, P.; Galtié, A.; Modin, P.; Voisin, L.; Balleyguier, P.; Gouard, P.; Donohue, J.

2002-11-01

At CESTA, we have been producing electron beams for some fifteen years by using induction accelerators and pulse diodes. First we had performed Frre-Electron Lasers experiments and we are currently studying the production of High-Power microwaves in the S-band. Among the possible sources we have chosen to perform Relativistic Klystron (RK) experiments with a pulse diode capable of generating a 700kV, 15 kA, 100 ns annular electron beam. In an amplifier configuration, we are testing the idea of using a Vircator as the driver for the first cavity of the klystron. This Vircator uses a simple electrical generator (Marx capacitor bank) which operates in the S-band in the GW class. By reducing the power level to about 100 MW, a 200 ns reliable and reproducible input driver pulse is obtained. First, we present the results of a preliminary experiment for which a coaxial cavity has been built in order to be fed by the Vircator emission at 2.45 GHz. Secondly, we give the experimental results in an oscillator configuration which corresponds to the fisrt step of our RK studies. Comparisons with the results of numerical simulations performed with MAGIC and MAFIA will be given for both experiments.

Wurtzite gallium phosphide has a direct-band gap

NARCIS (Netherlands)

Assali, S.; Zardo, I.; Plissard, S.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong

Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

DEFF Research Database (Denmark)

Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

2009-01-01

Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

Kinetics of singlet and triplet excitons in a wide-band-gap copolymer

NARCIS (Netherlands)

Loi, MA; Gadermaier, C; List, EJW; Leising, G; Graupner, W; Bongiovanni, G; Mura, A; Pireaux, JJ; Kaeriyama, K

2000-01-01

Transient and photomodulation spectroscopy is used in order to determine decay times and densities of both emitting and absorbing species in the wide band-gap semiconductor poly-2,5-diheptyl-1,4-phenylene-alt-2, S-thienylene (PDHPT). The wide band gap of this material is a consequence of the large

A concept of a wide aperture klystron with RF absorbing drift tubes for linear collider

International Nuclear Information System (INIS)

Dolbilov, G.V.; Azorskij, N.I.; Fateev, A.A.

1997-01-01

This paper is devoted to a problem of optimal design of the electrodynamic structure of the X-band klystron for a linear collider. It is shown that optimal design should provide large aperture and a high power gain, about 80 dB. The most severe problem arising here is that of parasitic self-excitation of the klystron, which becomes more complicated at increasing aperture and power gain. Our investigations have shown that traditional methods for suppressing the self-excitation become ineffective at desired technical parameters of the klystron. A novel concept of a wide aperture klystron with distributed suppression of parasitic oscillations is presented. Results of experimental study of the wide-aperture relativistic klystron for VLEPP are presented. Investigations have been performed using the driving beam of the JINR LIA-3000 induction accelerator (E=1 MeV, I=250 A, τ=250 ns). To suppress self-excitation parasitic modes we have used technique of RF absorbing drift tubes. As a result, we have obtained design output parameters of the klystron and achieved level of 100 MW output power

Development of C-band Accelerating Section for SuperKEKB

CERN Document Server

Kamitani, T; Ikeda, M; Kakihara, K; Ohsawa, S; Oogoe, T; Sugimura, T; Takatomi, T; Yamaguchi, S; Yokoyama, K

2004-01-01

For the luminosity upgrade of the present KEK B-factory to SuperKEKB, the injector linac has to increase the positron acceleration energy from 3.5 to 8.0 GeV. In order to double the acceleration field gradient from 21 to 42 MV/m, design studies on C-band accelerator module has started in 2002. First prototype 1-m long accelerating section has been fabricated based upon a design which is half scale of the present S-band section. High power test of the C-band section has been performed at a test stand and later at an accelerator module in the KEKB injector linac. In a beam acceleration test, a field gradient of 41 MV/m is achieved with 43 MW RF power from a klystron. This paper report on the recent status of the high-power test and also the development of a second prototype section.

Graded band-gap engineering for increased efficiency in CZTS solar cells

Science.gov (United States)

Ferhati, H.; Djeffal, F.

2018-02-01

In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9% is recorded for the optimized solar cell with a relative improvement of 92%, compared with the reference cell efficiency of 8.8%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889 mV, a short-circuit current of 28.5 mA and a fill factor of 66%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.

Low band gap polymers for organic photovoltaics

DEFF Research Database (Denmark)

Bundgaard, Eva; Krebs, Frederik C

2007-01-01

Low band gap polymer materials and their application in organic photovoltaics (OPV) are reviewed. We detail the synthetic approaches to low band gap polymer materials starting from the early methodologies employing quinoid homopolymer structures to the current state of the art that relies...

True photonic band-gap mode-control in VCSEL structures

DEFF Research Database (Denmark)

Romstad, F.; Madsen, M.; Birkedal, Dan

2003-01-01

Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%

CERN Document Server

Baikov, Andrey Yu; Syratchev, Igor

2015-01-01

The increase in efficiency of RF power generation for future large accelerators is considered a high priority issue. The vast majority of the existing commercial high-power RF klystrons operates in the electronic efficiency range between 40% and 55%. Only a few klystrons available on the market are capable of operating with 65% efficiency or above. In this paper, a new method to achieve 90% RF power conversion efficiency in a klystron amplifier is presented. The essential part of this method is a new bunching technique - bunching with bunch core oscillations. Computer simulations confirm that the RF production efficiency above 90% can be reached with this new bunching method. The results of a preliminary study of an L-band, 20-MW peak RF power multibeam klystron for Compact Linear Collider with the efficiency above 85% are presented.

Modeling charged defects inside density functional theory band gaps

International Nuclear Information System (INIS)

Schultz, Peter A.; Edwards, Arthur H.

2014-01-01

Density functional theory (DFT) has emerged as an important tool to probe microscopic behavior in materials. The fundamental band gap defines the energy scale for charge transition energy levels of point defects in ionic and covalent materials. The eigenvalue gap between occupied and unoccupied states in conventional DFT, the Kohn–Sham gap, is often half or less of the experimental band gap, seemingly precluding quantitative studies of charged defects. Applying explicit and rigorous control of charge boundary conditions in supercells, we find that calculations of defect energy levels derived from total energy differences give accurate predictions of charge transition energy levels in Si and GaAs, unhampered by a band gap problem. The GaAs system provides a good theoretical laboratory for investigating band gap effects in defect level calculations: depending on the functional and pseudopotential, the Kohn–Sham gap can be as large as 1.1 eV or as small as 0.1 eV. We find that the effective defect band gap, the computed range in defect levels, is mostly insensitive to the Kohn–Sham gap, demonstrating it is often possible to use conventional DFT for quantitative studies of defect chemistry governing interesting materials behavior in semiconductors and oxides despite a band gap problem

Optimum design of band-gap beam structures

DEFF Research Database (Denmark)

Olhoff, Niels; Niu, Bin; Cheng, Gengdong

2012-01-01

The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...... or significantly suppressed for a range of external excitation frequencies. Maximization of the band-gap is therefore an obvious objective for optimum design. This problem is sometimes formulated by optimizing a parameterized design model which assumes multiple periodicity in the design. However, it is shown...... in the present paper that such an a priori assumption is not necessary since, in general, just the maximization of the gap between two consecutive natural frequencies leads to significant design periodicity. The aim of this paper is to maximize frequency gaps by shape optimization of transversely vibrating...

New developments in relativistic klystron amplifiers

Energy Technology Data Exchange (ETDEWEB)

Friedman, M; Colombant, D; Fernsler, R; Hubbard, R; Lampe, M; Serlin, V; Slinker, S [Naval Research Lab., Washington, DC (United States). Plasma Physics Div.

1997-12-31

A relativistic klystron amplifier that employed cavities with inductively loaded wide gaps and a novel converter has achieved 50% energy efficiency, a significant advance over the previous state of the art of 20%. The new device was immersed in a 3 kG magnetic field and contained two innovations: (1) Wide gaps which include an inductively loaded return current structure that was opaque to the unmodulated beam space charge but transparent to the RF field. (2) A novel converter that was made of a `leaky` cavity with a radially-converging inductively-loaded structure that was inserted in the output wide-gap. This structure reduced the potential energy residing in the electron beam and maximized RF output energy. (author). 4 figs., 13 refs.

The Marvels of Electromagnetic Band Gap (EBG) Structures

Science.gov (United States)

2003-11-01

terminology of "Electromagnetic conference papers and journal articles dealing with Band- gaps (EBG)". Recently, many researchers the characterizations...Band Gap (EBG) Structures 9 utilized to reduce the mutual coupling between Structures: An FDTD/Prony Technique elements of antenna arrays. based on the...Band- Gap of several patents. He has had pioneering research contributions in diverse areas of electromagnetics,Snteructure", Dymposiget o l 21 IE 48

The band gap of II-Vi ternary alloys in a tight-binding description

Energy Technology Data Exchange (ETDEWEB)

Olguin, Daniel; Blanquero, Rafael [Instituto Politecnico Nacional, Mexico, D.F (Mexico); De Coss, Romeo [Instituto Politecnico Nacional, Yucatan (Mexico)

2001-02-01

We present tight-binding calculations for the band gap of II-Vi pseudobinary ternary alloys. We use an sp{sup 3} s* tight-binding Hamiltonian which include spin-orbit coupling. The band gap composition dependence is calculated using a extended version of the virtual crystal approximation, which introduce an empirical correction factor that takes into account the non-linear dependence of the band gap with the composition. The results compare quite well with the experimental data, both for the ternary alloys with wide band gap and for the narrow band gap ones. [Spanish] Presentamos el calculo de la banda de energia prohibida de aleaciones ternarias de compuestos II-VI. El calculo, que incluye interaccion espin-orbita, se hace con el metodo de enlace fuerte, utilizando una base ortogonal de cinco orbitales atomicos por atomo (sp{sup 3} s*), en conjunto con la aproximacion del cristal virtual. En la aproximacion del cristal virtual, incluimos un factor de correccion que toma en cuenta la no linealidad de la banda de energia prohibida como funcion de la concentracion. Con esta correccion nuestros resultados reproducen aceptablemente los datos experimentales hallados en la literatura.

Investigation of Double-Band Electrophoretic Pattern of ITS-rDNA Region in Iranian Isolates of Leishmania Tropica

Directory of Open Access Journals (Sweden)

MA Ghatee

2013-06-01

Full Text Available Background: Leishmania tropica is a genetically divergent species. Amplification of entire internal tran­scribed spacer (ITS region of L. tropica isolates obtained from Bam district, one of the well known focus of anthroponotic cutaneous leishmaniasis ACL( in Iran, revealed a double-band pat­tern in agarose gel electrophoresis. This study explains how this pattern occurs.Methods: Twenty seven L. tropica smear preparations were collected from Bam district, south east Iran, and eight L. major and one L. infantum smear preparations were gathered from Shiraz, south west Iran. Furthermore one L. major and one L. infantum cultured standard strains were tested using entire ITS-PCR to survey their electrophoretic pattern. The ITS sequences of L. tropica, L. major, and L. infantum already deposited in GenBank were analyzed. Analysis of GenBank sequences of L. tropica revealed two groups of sequences based on length size, one group having a 100 bp gap. Therefore, a new re­verse primer namely LITS-MG was designed to exclude this gap in PCR products.Results: Whole ITS fragment amplification resulted in a double-band pattern in all L. tropica cases, while a sharp single band was observed for L. infantum and L. major isolates. This result was correspond­ing to the result obtained from in silico analysis of GenBank sequences. Use of LITS-MG primer was expectedly resulted in a single band including ITS1, 5.8s and partial ITS2 product for L. tropica which is appropriate for following molecular studies such as sequencing or restriction analysis.Conclusion: Sequences analysis of GenBank L. tropica sequences and following practical laboratory tests revealed at least two alleles in L. tropica which were confirmed in Bam isolates. This especial double-band pattern is because of a 100 bp fragment difference within ITS-rDNA alleles

Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

Czech Academy of Sciences Publication Activity Database

Yadav, S.K.; Uberuaga, B.P.; Nikl, Martin; Jiang, C.; Stanek, C.R.

2015-01-01

Roč. 4, č. 5 (2015), "054012-1"-"054012-9" ISSN 2331-7019 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillator * electronic band gap structure * garnets * band gap engineering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.061, year: 2015

Experimental Performance of the NRL 8-Beam, 4-Cavity Multiple-Beam Klystron

Science.gov (United States)

Abe, D. K.; Pershing, D. E.; Nguyen, K. T.; Wood, F. N.; Myers, R. E.; Eisen, E. L.; Cusick, M.; Levush, B.

2006-01-01

Multiple-beam amplifiers (MBAs) represent a device technology with the potential to produce high-power, efficient amplifiers with relatively wide bandwidths that are compact, low-weight, low-noise, and operate at reduced voltages relative to comparable single-beam devices. To better understand the device physics and technical issues involved in the design, fabrication, and operation of these devices, the U.S. Naval Research Laboratory (NRL) has an on-going program to develop high peak power (> 600 kW) multiple-beam klystrons (MBKs) operating in S-band (˜3.3 GHz).

Band Gap Optimization Design of Photonic Crystals Material

Science.gov (United States)

Yu, Y.; Yu, B.; Gao, X.

2017-12-01

The photonic crystal has a fundamental characteristic - photonic band gap, which can prevent light to spread in the crystals. This paper studies the width variation of band gaps of two-dimension square lattice photonic crystals by changing the geometrical shape of the unit cells’ inner medium column. Using the finite element method, we conduct numerical experiments on MATLAB 2012a and COMSOL 3.5. By shortening the radius in vertical axis and rotating the medium column, we design a new unit cell, with a 0.3*3.85e-7 vertical radius and a 15 degree deviation to the horizontal axis. The new cell has a gap 1.51 percent wider than the circle medium structure in TE gap and creates a 0.0124 wide TM gap. Besides, the experiment shows the first TM gap is partially overlapped by the second TE gap in gap pictures. This is helpful to format the absolute photonic band gaps and provides favorable theoretical basis for designing photonic communication material.

Enhancement of phononic band gaps in ternary/binary structure

International Nuclear Information System (INIS)

Aly, Arafa H.; Mehaney, Ahmed

2012-01-01

Based on the transfer matrix method (TMM) and Bloch theory, the interaction of elastic waves (normal incidence) with 1D phononic crystal had been studied. The transfer matrix method was obtained for both longitudinal and transverse waves by applying the continuity conditions between the consecutive unit cells. Dispersion relations are calculated and plotted for both binary and ternary structures. Also we have investigated the corresponding effects on the band gaps values for the two types of phononic crystals. Furthermore, it can be observed that the complete band gaps are located in the common frequency stop-band regions. Numerical simulations are performed to investigate the effect of different thickness ratios inside each unit cell on the band gap values, as well as unit cells thickness on the central band gap frequency. These phononic band gap materials can be used as a filter for elastic waves at different frequencies values.

Thyratron-PFN, IGBT Hybrid, and Direct Switched Modulator R and D As it Effects Klystron Protection

International Nuclear Information System (INIS)

Gold, Saul L

2000-01-01

Modulator development is an ongoing program at SLAC. The Stanford Linear Accelerator with its approximately 240 klystrons and modulators operates for 6,000 plus hours a year. This operation gives SLAC an important insight into component and system reliability in the High Voltage environment. The planned NLC is approximately 10 times the size of SLAC and the High Voltage Modulator Klystron systems are one of the largest cost drivers. This paper will contain a brief progress report on the optimized Line Modulator and touch on Solid-State advances, which make Solid State, High Power pulse modulators the wave of the future. Klystron protection remains a critical issue along with modulator reliability, efficiency and cost. Configurations whereby multiple klystrons are paralleled on a single modulator may exacerbate the problem. The majority of this paper will discuss tests at SLAC of klystron arcs on Line-type modulators with single and double klystron loads. This talk may introduce and refer to other talks at this conference and other conferences by National and Foreign Laboratory collaborators and Industry, specifically in relation to DOE SBIR programs

Real-space description of semiconducting band gaps in substitutional systems

International Nuclear Information System (INIS)

Magri, R.; Zunger, A.

1991-01-01

The goal of ''band-gap engineering'' in substitutional lattices is to identify atomic configurations that would give rise to a desired value of the band gap. Yet, current theoretical approaches to the problems, based largely on compilations of band structures for various latice configurations, have not yielded simple rules relating structural motifs to band gaps. We show that the band gap of substitutional AlAs/GaAs lattices can be usefully expanded in terms of a hierarchy of contributions from real-space ''atomic figures'' (pairs, triplets, quadruplets) detemined from first-principles band-structure calculations. Pair figures (up to fourth neighbors) and three-body figures are dominant. In analogy with similar cluster expansions of the total energy, this permits a systematic search among all lattice configurations for those having ''special'' band gaps. This approach enables the design of substitutional systems with certain band-gap properties by assembling atomic figures. As an illustration, we predict that the [0 bar 12]-oriented (AlAs) 1 /(GaAs) 4 /(AlAs) 1 /(GaAs) 2 superlattice has the largest band gap among all Al 0.25 Ga 0.75 As lattices with a maximum of ten cations per unit cell

Plasmon band gap generated by intense ion acoustic waves

International Nuclear Information System (INIS)

Son, S.; Ku, S.

2010-01-01

In the presence of an intense ion acoustic wave, the energy-momentum dispersion relation of plasmons is strongly modified to exhibit a band gap structure. The intensity of an ion acoustic wave might be measured from the band gap width. The plasmon band gap can be used to block the nonlinear cascading channel of the Langmuir wave decay.

Transient analysis of multicavity klystrons

International Nuclear Information System (INIS)

Lavine, T.L.; Miller, R.H.; Morton, P.L.; Ruth, R.D.

1988-09-01

We describe a model for analytic analysis of transients in multicavity klystron output power and phase. Cavities are modeled as resonant circuits, while bunching of the beam is modeled using linear space-charge wave theory. Our analysis has been implemented in a computer program which we use in designing multicavity klystrons with stable output power and phase. We present as examples transient analysis of a relativistic klystron using a magnetic pulse compression modulator, and of a conventional klystron designed to use phase shifting techniques for RF pulse compression. 4 refs., 4 figs

Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending.

Science.gov (United States)

Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung; Li, Lain-Jong; Shih, Chih-Kang

2014-05-14

Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer MoS2 is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS2. In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

Designing broad phononic band gaps for in-plane modes

Science.gov (United States)

Li, Yang Fan; Meng, Fei; Li, Shuo; Jia, Baohua; Zhou, Shiwei; Huang, Xiaodong

2018-03-01

Phononic crystals are known as artificial materials that can manipulate the propagation of elastic waves, and one essential feature of phononic crystals is the existence of forbidden frequency range of traveling waves called band gaps. In this paper, we have proposed an easy way to design phononic crystals with large in-plane band gaps. We demonstrated that the gap between two arbitrarily appointed bands of in-plane mode can be formed by employing a certain number of solid or hollow circular rods embedded in a matrix material. Topology optimization has been applied to find the best material distributions within the primitive unit cell with maximal band gap width. Our results reveal that the centroids of optimized rods coincide with the point positions generated by Lloyd's algorithm, which deepens our understandings on the formation mechanism of phononic in-plane band gaps.

Band Gap Engineering of Titania Systems Purposed for Photocatalytic Activity

Science.gov (United States)

Thurston, Cameron

Ab initio computer aided design drastically increases candidate population for highly specified material discovery and selection. These simulations, carried out through a first-principles computational approach, accurately extrapolate material properties and behavior. Titanium Dioxide (TiO2 ) is one such material that stands to gain a great deal from the use of these simulations. In its anatase form, titania (TiO2 ) has been found to exhibit a band gap nearing 3.2 eV. If titania is to become a viable alternative to other contemporary photoactive materials exhibiting band gaps better suited for the solar spectrum, then the band gap must be subsequently reduced. To lower the energy needed for electronic excitation, both transition metals and non-metals have been extensively researched and are currently viable candidates for the continued reduction of titania's band gap. The introduction of multicomponent atomic doping introduces new energy bands which tend to both reduce the band gap and recombination loss. Ta-N, Nb-N, V-N, Cr-N, Mo-N, and W-N substitutions were studied in titania and subsequent energy and band gap calculations show a favorable band gap reduction in the case of passivated systems.

Effect of hydrogenation on the band gap of graphene nano-flakes

International Nuclear Information System (INIS)

Tachikawa, Hiroto; Iyama, Tetsuji; Kawabata, Hiroshi

2014-01-01

The effects of hydrogenation on the band gap of graphene have been investigated by means of density functional theory method. It is generally considered that the band gap increases with increasing coverage of hydrogen atom on the graphene. However, the present study shows that the band gap decreases first with increasing hydrogen coverage and reaches the lowest value at finite coverage (γ = 0.3). Next, the band gap increases to that of insulator with coverage from 0.3 to 1.0. This specific feature of the band gap is reasonably explained by broken symmetry model and the decrease of pi-conjugation. The electronic states of hydrogenated graphene are discussed. - Highlights: • Density functional theory calculations were carried out for hydrogen on graphene • Effects of hydrogenation on the band gap of graphene were examined. • The band gap showed a minimum at a finite coverage. • Mechanism of specific band gap feature was discussed

Relativistic klystrons

International Nuclear Information System (INIS)

Allen, M.A.; Azuma, O.; Callin, R.S.

1989-03-01

Experimental work is underway by a SLAC-LLNL-LBL collaboration to investigate the feasibility of using relativistic klystrons as a power source for future high gradient accelerators. Two different relativistic klystron configurations have been built and tested to date: a high grain multicavity klystron at 11.4 GHz and a low gain two cavity subharmonic buncher driven at 5.7 GHz. In both configurations power is extracted at 11.4 GHz. In order to understand the basic physics issues involved in extracting RF from a high power beam, we have used both a single resonant cavity and a multi-cell traveling wave structure for energy extraction. We have learned how to overcome our previously reported problem of high power RF pulse shortening, and have achieved peak RF power levels of 170 MW with the RF pulse of the same duration as the beam current pulse. 6 refs., 3 figs., 3 tabs

Spectroscopic studies on novel donor-acceptor and low band-gap polymeric semiconductors

International Nuclear Information System (INIS)

Cravino, A.

2002-11-01

Novel low band-gap conjugated polymeric semiconductors as well as conjugated electron donor chains carrying electron acceptor substituents were electrochemically prepared and investigated by means of different spectroscopic techniques. Using in situ FTIR and ESR spectroelectrochemistry, the spectroscopic features of injected positive charges are found to be different as opposed to the negative charge carriers on the same conjugated polymer. These results, for which the theoretical models so far developed do not account, demonstrate the different structure and delocalization of charge carriers with opposite signs. In addition, vibrational spectroscopy results proof the enhanced 'quinoid' character of low band-gap conjugated chains. Excited state spectroscopy was applied to study photoexcitations in conjugated polymers carrying tetracyanoanthraquinone type or fullerene moieties. This novel class of materials, hereafter called double-cable polymers, was found promising as alternative to the conjugated polymer:fullerene mixtures currently used for the preparation of 'bulk-heterojunction' polymeric solar cells. (author)

Measurement of the band gap by reflection electron energy loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Vos, Maarten, E-mail: maarten.vos@anu.edu.au [Electronic Materials Engineering Department, Research School of Physics and Engineering, The Australian National University, Canberra 0200 (Australia); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 (United States); French, Benjamin L. [Ocotillo Materials Laboratory, Intel Corporation, Chandler, AZ 85248 (United States)

2016-10-15

Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

Measurement of the band gap by reflection electron energy loss spectroscopy

International Nuclear Information System (INIS)

Vos, Maarten; King, Sean W.; French, Benjamin L.

2016-01-01

Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

Opening complete band gaps in two dimensional locally resonant phononic crystals

Science.gov (United States)

Zhou, Xiaoling; Wang, Longqi

2018-05-01

Locally resonant phononic crystals (LRPCs) which have low frequency band gaps attract a growing attention in both scientific and engineering field recently. Wide complete locally resonant band gaps are the goal for researchers. In this paper, complete band gaps are achieved by carefully designing the geometrical properties of the inclusions in two dimensional LRPCs. The band structures and mechanisms of different types of models are investigated by the finite element method. The translational vibration patterns in both the in-plane and out-of-plane directions contribute to the full band gaps. The frequency response of the finite periodic structures demonstrate the attenuation effects in the complete band gaps. Moreover, it is found that the complete band gaps can be further widened and lowered by increasing the height of the inclusions. The tunable properties by changing the geometrical parameters provide a good way to open wide locally resonant band gaps.

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

Science.gov (United States)

Su, Ching-Hua; Sha, Yi-Gao

1995-01-01

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells.

Science.gov (United States)

Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

2015-09-23

Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

Solid state modulator for klystron power supply XFEL TDS INJ

Science.gov (United States)

Zavadtsev, A. A.; Zavadtsev, D. A.; Zybin, D. A.; Churanov, D. V.; Shemarykin, P. V.

2016-09-01

The transverse deflecting system XFEL TDS INJ for European X-ray Free Electron Laser includes power supply for the CPI VKS-8262HS klystron. It has been designed for pulse high-voltage, cathode heating, solenoid and klystron ion pump. The klystron power supply includes solid state modulator, pulse transformer, controlled power supply for cathode heating and commercial power supplies for solenoid and ion pump. Main parameters of the modulator are 110 kV of peak voltage, 72 A peak current, and pulse length up to 6 μs. The klystron power supply has been developed, designed, manufactured, tuned, tested and installed in the XFEL building. All designed parameters are satisfied.

Spontaneous emission spectrum from a V-type three-level atom in a double-band photonic crystal

International Nuclear Information System (INIS)

Zhang Han Zhuang; Tang Sing Hai; Dong Po; He Jun

2002-01-01

The spontaneous emission spectrum from a V-type three-level atom embedded in a double-band photonic band gap (PBG) material has been investigated for the first time. Most interestingly it is shown that there is not only a black dark line, but also a narrow spontaneous line near the edges of the double photonic band. The positions of the dark line and narrow spontaneous line are near the transition from an empty upper level to a lower level. The lines stem from destructive and constructive quantum interferences, which induce population transfer between the two upper levels, in the PBG reservoirs. The effects of system parameters on the interference have been discussed in detail

Multi-cavity locally resonant structure with the low frequency and broad band-gaps

Directory of Open Access Journals (Sweden)

Jiulong Jiang

2016-11-01

Full Text Available A multi-cavity periodic structure with the characteristic of local resonance was proposed in the paper. The low frequency band-gap structure was comparatively analyzed by the finite element method (FEM and electric circuit analogy (ECA. Low frequency band-gap can be opened through the dual influence of the coupling’s resonance in the cavity and the interaction among the couplings between structures. Finally, the influence of the structural factors on the band-gap was analyzed. The results show that the structure, which is divided into three parts equally, has a broader effective band-gap below the frequency of 200 Hz. It is also proved that reducing the interval between unit structures can increase the intensity of the couplings among the structures. And in this way, the width of band-gap would be expanded significantly. Through the parameters adjustment, the structure enjoys a satisfied sound insulation effect below the frequency of 500Hz. In the area of low frequency noise reduction, the structure has a lot of potential applications.

Fundamentals of klystron testing

International Nuclear Information System (INIS)

Caldwell, J.W. Jr.

1978-08-01

Fundamentals of klystron testing is a text primarily intended for the indoctrination of new klystron group test stand operators. It should significantly reduce the familiarization time of a new operator, making him an asset to the group sooner than has been experienced in the past. The new employee must appreciate the mission of SLAC before he can rightfully be expected to make a meaningful contribution to the group's effort. Thus, the introductory section acquaints the reader with basic concepts of accelerators in general, then briefly describes major physical aspects of the Stanford Linear Accelerator. Only then is his attention directed to the klystron, with its auxiliary systems, and the rudiments of klystron tube performance checks. It is presumed that the reader is acquainted with basic principles of electronics and scientific notation. However, to preserve the integrity of an indoctrination guide, tedious technical discussions and mathematical analysis have been studiously avoided. It is hoped that the new operator will continue to use the text for reference long after his indoctrination period is completed. Even the more experienced operator should find that particular sections will refresh his understanding of basic principles of klystron testing

Terahertz spectroscopy of three-dimensional photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Ho, K.M.; Bostak, J.; Bloom, D.M.

1994-01-01

We have fabricated and built three-dimensional photonic band-gap crystals with band-gap frequencies larger than 500 GHz. We built the crystals by stacking micromachined (110) silicon wafers. The transmission and dispersion characteristics of the structures were measured by an all-electronic terahertz spectroscopy setup. The experimental results were in good agreement with theoretical calculations. To our knowledge, our new crystal has the highest reported photonic band-gap frequency

Suppression of SBO and stability improvements of TRISTAN 1 MW high power Klystrons

International Nuclear Information System (INIS)

Isagawa, Shigeru; Yoshida, Masato; Takeuchi, Yasunao; Ono, Masaaki; Yoshimoto, Shin-ichi; Schweppe, E.G.; Demmel, E.; Seifert, H.

1994-01-01

Philips 1 MW CW Klystrons have been well operated in TRISTAN for almost 7 years. Problems like degradation of gun insulation and abnormal anode emission, both caused by excess barium evaporation from cathode and by emission of electrons from hot electrodes of electron gun, have been successfully solved by the use of M-type cathode as well as of redesigned gun with decreased electrode temperatures. The electrode temperatures are, however, still yet to be optimized. Modifications should be refined much more. Positive spikes of anode current and Side Band Oscillations (SBO) which are caused by back streaming electrons from collector and/or output gap have been studied intensively. Much improvements have been made so far by taking a good combination of modified drift tubes, anode shape, number of cavities and redesigned output transitions. (author)

Anomalous band-gap bowing of AlN1−xPx alloy

International Nuclear Information System (INIS)

Winiarski, M.J.; Polak, M.; Scharoch, P.

2013-01-01

Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

Research on low-frequency band gap property of a hybrid phononic crystal

Science.gov (United States)

Dong, Yake; Yao, Hong; Du, Jun; Zhao, Jingbo; Chao, Ding; Wang, Benchi

2018-05-01

A hybrid phononic crystal has been investigated. The characteristic frequency of XY mode, transmission loss and displacement vector have been calculated by the finite element method. There are Bragg scattering band gap and local resonance band gap in the band structures. We studied the influence factors of band gap. There are many flat bands in the eigenfrequencies curve. There are many flat bands in the curve. The band gap covers a large range in low frequency. The band gaps cover more than 95% below 3000 Hz.

Investigation of ultra-high sensitivity Klystron cavity transducers for broadband resonant-mass gravitational wave detectors

International Nuclear Information System (INIS)

Pimentel, Guilherme Leite

2008-01-01

We show that, with a suitable choice of the parameters of the gravitational wave detector Mario Schoenberg, with technological accessible parameters (using state-of-art electronics), its sensitivity curve can be improved over the current project curve to become competitive with interferometric detectors in a frequency band of 1500 Hz, in the region from 1000 to 10000 Hz (these competitive bands are centered at the sphere's quadrupole modes). The sensitivity curve of an array of 100 identical spheres identical to the Schoenberg one is also analyzed, and is competitive against advanced LIGO in the entire band. A detailed study of the project's viability is conducted, with an emphasis on the project of the klystron resonant cavity, which will have a center post with a 1 nm gap, which represents a great technological challenge. This challenge is analyzed in terms of the cavity project as well as with a focus on the Casimir effect on the cavity. This could open an opportunity for precise measurements of this effect on a new distance scale compared to current measurements (in the μm scale). (author)

Klystron equalization for RF feedback

International Nuclear Information System (INIS)

Corredoura, P.

1993-01-01

The next generation of colliding beam storage rings support higher luminosities by significantly increasing the number of bunches and decreasing the spacing between respective bunches. The heavy beam loading requires large RF cavity detuning which drives several lower coupled bunch modes very strongly. One technique which has proven to be very successful in reducing the coupled bunch mode driving impedance is RF feedback around the klystron-cavity combination. The gain and bandwidth of the feedback loop is limited by the group delay around the feedback loop. Existing klystrons on the world market have not been optimized for this application and contribute a large portion of the total loop group delay. This paper describes a technique to reduce klystron group delay by adding an equalizing filter to the klystron RF drive. Such a filter was built and tested on a 500 kill klystron as part of the on going PEP-II R ampersand D effort here at SLAC

CZTS stoichiometry effects on the band gap energy

International Nuclear Information System (INIS)

Malerba, Claudia; Biccari, Francesco; Azanza Ricardo, Cristy Leonor; Valentini, Matteo; Chierchia, Rosa; Müller, Melanie; Santoni, Antonino; Esposito, Emilia; Mangiapane, Pietro; Scardi, Paolo; Mittiga, Alberto

2014-01-01

Highlights: • CZTS films with different compositions were grown from stacked-layer precursors. • The band-gap energy varies from 1.48 to 1.63 eV as the [Sn]/[Cu] ratio increases. • The Zn content seems not to be a critical parameter for the optical properties. • PDS data show an increase of the sub-gap absorption as the Sn content is reduced. • Formation of defects at low Sn content was proposed to explain the Eg variation. -- Abstract: The considerable spread of Cu 2 ZnSnS 4 (CZTS) optical properties reported in the literature is discussed in terms of material stoichiometry. To this purpose, kesterite thin films were prepared by sulfurization of multilayered precursors of ZnS, Cu and Sn, changing the relative amounts to obtain CZTS layers with different compositions. X-Ray Diffraction (XRD), Energy Dispersive X-Ray (EDX) spectroscopy, X-Ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy were used for structural and compositional analysis. XRD quantitative phase analysis provides the amount of spurious phases and information on Sn-site occupancy. The optical properties were investigated by spectrophotometric and Photothermal Deflection Spectroscopy (PDS) measurements to assess the absorption coefficient of samples with different compositions. The PDS data show an increase of the sub-band absorption as the Sn content decreases. The results are interpreted assuming the formation of additional defects as the tin content is reduced. Those defects can also be responsible for the decrease of the band gap energy value as the Sn/Cu ratio is decreased

Effects of interlayer Sn-Sn lone pair interaction on the band gap of bulk and nanosheet SnO

Science.gov (United States)

Umezawa, Naoto; Zhou, Wei

2015-03-01

Effects of interlayer lone-pair interactions on the electronic structure of SnO are firstly explored by the density-functional theory. Our comprehensive study reveals that the band gap of SnO opens as increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consists of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalyst for hydrogen evolution. This work is supported by the Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) program.

Multipactors in klystron cavities

International Nuclear Information System (INIS)

Hayashi, Kazutaka; Iyeki, Hiroshi; Kikunaga, Toshiyuki.

1993-01-01

A multipactor phenomenon in a klystron causes gain shortage or instability problem. Some tests using a prototype klystron input cavity revealed the microwave discharges in vacuum with magnetic field. The test results and the methods to avoid multipactors are discussed in this paper. (author)

Maintenance of a medical klystron linear accelerator and evaluation of the lifetime of the klystron

International Nuclear Information System (INIS)

Yokoyama, Koichi; Takita, Takenobu; Hashimoto, Shigeo; Koda, Yukio; Sawayanagi, Hisayoshi

1981-01-01

A 15 MeV Mitsubishi medical linear accelerator was installed at our center in June 1971. Clinical use and maintenance of the machine are reviewed. Special attention should be paid to the fact that only one klystron tube has been working for nine years. This tube has now recorded more than 17,000 filament hours, while the manufacturer's warranty time is 1,500 hours. Extension of the operating hours will significantly reduce the maintenance expenses of the machine. In this aspect, we intended to evaluate the lifetime of the Mitsubishi klystron used at several hospitals by means of a questionnaire. As a result, the following points are noticed: 1. It is advisable to keep in use a klystron tube which has been working normally for a quite long time. (Preventive replacement is unnecessary.) 2. A protective device should be provided to prevent the trouble which will follow the breakage in a klystron. 3. The present warranty time for the klystron may depend on the lifetime of individual products, including even some defective ones. If the occurrence of such products is minimized, the mean life of the klystron will be extended considerably and, consequently, the warranty time can also be prolonged to a great extent. (author)

Modification in band gap of zirconium complexes

Energy Technology Data Exchange (ETDEWEB)

Sharma, Mayank, E-mail: mayank30134@gmail.com; Singh, J.; Chouhan, S. [Department of Physics, ISLE, IPS Academy, Indore (M.P.) (India); Mishra, A. [School of Physics, Devi Ahilya Vishwavidyalaya, Indore (M.P.) (India); Shrivastava, B. D. [Govt. P. G. College, Biora (M.P.) (India)

2016-05-06

The optical properties of zirconium complexes with amino acid based Schiff bases are reported here. The zirconium complexes show interesting stereo chemical features, which are applicable in organometallic and organic synthesis as well as in catalysis. The band gaps of both Schiff bases and zirconium complexes were obtained by UV-Visible spectroscopy. It was found that the band gap of zirconium complexes has been modified after adding zirconium compound to the Schiff bases.

SLAC RF Source Research at X-Band

International Nuclear Information System (INIS)

Sprehn, D.

2003-01-01

X-band klystrons capable of 75 MW and utilizing either solenoidal or Periodic Permanent Magnet (PPM) focusing are undergoing design, fabrication and testing at the Stanford Linear Accelerator Center (SLAC). The klystron development is part of an effort to realize components necessary for the construction of the Next Linear Collider (NLC). SLAC has developed a solenoidal-focused X-band klystron which is currently the workhorse of high power component testing for the NLC. A state-of-the-art modulator will drive eight of these tubes which, in turn, will power an rf distribution system referred to as the ''8-pack'' in order to test these modulators and waveguide components. Eventually, in an interest to save millions of dollars per year in the operational cost of the NLC, these tubes will be replaced by PPM klystrons. The PPM devices built to date which fit this class of operation consist of a variety of 50 MW and 75 MW devices constructed by SLAC, KEK (Tsukuba, Japan ), and industry. These tubes follow from the successful 50 MW PPM design of 1996. Recent testing of this particular tube at wider pulsewidths has reached 50 MW at 55 % efficiency, 2.4 μs and 60 Hz. Two 50 MW PPM klystrons produced by industry have been delivered to SLAC. One of these devices arrived with a vacuum suitable for test. Testing during 2001 revealed a serious, but curious, vacuum response which limited the operation to an rf output of ∼40 MW. A 75 MW PPM klystron prototype was first constructed in 1997 and later modified in 1999 to eliminate oscillations. This tube has reached the NLC design target of 75 MW at 1.5 μs though at a significantly reduced rep rate. Two new 75 MW PPM klystrons were constructed and tested in 2002 after a diode was successfully tested in 2001. The new design was aimed at reducing the cost and increasing the reliability of such high-energy devices. The rf circuit and beam focusing for one of these devices was built by industry and incorporated into one of the tubes

Wide Band to ''Double Band'' upgrade

International Nuclear Information System (INIS)

Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

1988-06-01

The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

International Nuclear Information System (INIS)

Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

2013-01-01

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

Designing Phononic Crystals with Wide and Robust Band Gaps

Science.gov (United States)

Jia, Zian; Chen, Yanyu; Yang, Haoxiang; Wang, Lifeng

2018-04-01

Phononic crystals (PnCs) engineered to manipulate and control the propagation of mechanical waves have enabled the design of a range of novel devices, such as waveguides, frequency modulators, and acoustic cloaks, for which wide and robust phononic band gaps are highly preferable. While numerous PnCs have been designed in recent decades, to the best of our knowledge, PnCs that possess simultaneous wide and robust band gaps (to randomness and deformations) have not yet been reported. Here, we demonstrate that by combining the band-gap formation mechanisms of Bragg scattering and local resonances (the latter one is dominating), PnCs with wide and robust phononic band gaps can be established. The robustness of the phononic band gaps are then discussed from two aspects: robustness to geometric randomness (manufacture defects) and robustness to deformations (mechanical stimuli). Analytical formulations further predict the optimal design parameters, and an uncertainty analysis quantifies the randomness effect of each designing parameter. Moreover, we show that the deformation robustness originates from a local resonance-dominant mechanism together with the suppression of structural instability. Importantly, the proposed PnCs require only a small number of layers of elements (three unit cells) to obtain broad, robust, and strong attenuation bands, which offer great potential in designing flexible and deformable phononic devices.

Designing Phononic Crystals with Wide and Robust Band Gaps

Energy Technology Data Exchange (ETDEWEB)

Chen, Yanyu [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jia, Zian [State University of New York at Stony Brook; Yang, Haoxiang [State University of New York at Stony Brook; Wang, Lifeng [State University of New York at Stony Brook

2018-04-16

Phononic crystals (PnCs) engineered to manipulate and control the propagation of mechanical waves have enabled the design of a range of novel devices, such as waveguides, frequency modulators, and acoustic cloaks, for which wide and robust phononic band gaps are highly preferable. While numerous PnCs have been designed in recent decades, to the best of our knowledge, PnCs that possess simultaneous wide and robust band gaps (to randomness and deformations) have not yet been reported. Here, we demonstrate that by combining the band-gap formation mechanisms of Bragg scattering and local resonances (the latter one is dominating), PnCs with wide and robust phononic band gaps can be established. The robustness of the phononic band gaps are then discussed from two aspects: robustness to geometric randomness (manufacture defects) and robustness to deformations (mechanical stimuli). Analytical formulations further predict the optimal design parameters, and an uncertainty analysis quantifies the randomness effect of each designing parameter. Moreover, we show that the deformation robustness originates from a local resonance-dominant mechanism together with the suppression of structural instability. Importantly, the proposed PnCs require only a small number of layers of elements (three unit cells) to obtain broad, robust, and strong attenuation bands, which offer great potential in designing flexible and deformable phononic devices.

TESLA: Large Signal Simulation Code for Klystrons

International Nuclear Information System (INIS)

Vlasov, Alexander N.; Cooke, Simon J.; Chernin, David P.; Antonsen, Thomas M. Jr.; Nguyen, Khanh T.; Levush, Baruch

2003-01-01

TESLA (Telegraphist's Equations Solution for Linear Beam Amplifiers) is a new code designed to simulate linear beam vacuum electronic devices with cavities, such as klystrons, extended interaction klystrons, twistrons, and coupled cavity amplifiers. The model includes a self-consistent, nonlinear solution of the three-dimensional electron equations of motion and the solution of time-dependent field equations. The model differs from the conventional Particle in Cell approach in that the field spectrum is assumed to consist of a carrier frequency and its harmonics with slowly varying envelopes. Also, fields in the external cavities are modeled with circuit like equations and couple to fields in the beam region through boundary conditions on the beam tunnel wall. The model in TESLA is an extension of the model used in gyrotron code MAGY. The TESLA formulation has been extended to be capable to treat the multiple beam case, in which each beam is transported inside its own tunnel. The beams interact with each other as they pass through the gaps in their common cavities. The interaction is treated by modification of the boundary conditions on the wall of each tunnel to include the effect of adjacent beams as well as the fields excited in each cavity. The extended version of TESLA for the multiple beam case, TESLA-MB, has been developed for single processor machines, and can run on UNIX machines and on PC computers with a large memory (above 2GB). The TESLA-MB algorithm is currently being modified to simulate multiple beam klystrons on multiprocessor machines using the MPI (Message Passing Interface) environment. The code TESLA has been verified by comparison with MAGIC for single and multiple beam cases. The TESLA code and the MAGIC code predict the same power within 1% for a simple two cavity klystron design while the computational time for TESLA is orders of magnitude less than for MAGIC 2D. In addition, recently TESLA was used to model the L-6048 klystron, code

Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

KAUST Repository

Li, Yongfeng; Deng, Rui; Lin, Weinan; Tian, Yufeng; Peng, Haiyang; Yi, Jiabao; Yao, Bin; Wu, Tao

2013-01-01

As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

KAUST Repository

Li, Yongfeng

2013-04-29

As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

International Nuclear Information System (INIS)

Miedema, P.S.; Beye, M.; Könnecke, R.; Schiwietz, G.; Föhlisch, A.

2014-01-01

Highlights: • Conduction band minima (CBM) of 6H-SiC are estimated with Si 2p XAS. • Valence band maxima (VBM) of 6H-SiC are estimated with non-resonant Si 2p XES. • Temperature-dependent VBM and CBM of 6H-SiC show asymmetric band gap closing. • XAS, XES and RIXS band gap estimates are compared with the optical band gap. • XAS + XES versus optical band gap provides core-excitonic screening energies. - Abstract: The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 × 10 −4 eV/K and a conduction-band slope of −1.334 × 10 −4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range

TlHgInS ₃ : An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

Energy Technology Data Exchange (ETDEWEB)

Li, Hao; Malliakas, Christos D.; Han, Fei; Chung, Duck Young; Kanatzidis, Mercouri G.

2015-08-11

The quaternary compound TlHgInS3 crystallizes in a new structure type of space group, C2/c, with cell parameters a = 13.916(3) angstrom, b = 3.9132(8) angstrom, c = 21.403(4) angstrom, beta = 104.16(3)degrees, V = 1130.1(8) angstrom(3), and rho = 7.241 g/cm(3). The structure is a unique three-dimensional framework with parallel tunnels, which is formed by (1)(infinity)[InS33-] infinite chains bridged by linearly coordinated Hg2+ ions. TlHgInS3 is a semiconductor with a band gap of 1.74 eV and a resistivity of similar to 4.32 G Omega cm. TlHgInS3 single crystals exhibit photocurrent response when exposed to Ag X-rays. The mobility-lifetime product (mu tau) of the electrons and holes estimated from the photocurrent measurements are (mu tau)(e) approximate to 3.6 x 10(-4) cm(2)/V and (mu tau)(h) approximate to 2.0 x 10(-4) cm(2)/V. Electronic structure calculations at the density functional theory level indicate an indirect band gap and a relatively small effective mass for both electrons and holes. Based on the photoconductivity data, TlHgInS3 is a potential material for radiation detection applications.

Anomalous electromagnetically induced transparency in photonic-band-gap materials

International Nuclear Information System (INIS)

Singh, Mahi R.

2004-01-01

The phenomenon of electromagnetically induced transparency has been studied when a four-level atom is located in a photonic band gap material. Quantum interference is introduced by driving the two upper levels of the atom with a strong pump laser field. The top level and one of the ground levels are coupled by a weak probe laser field and absorption takes place between these two states. The susceptibility due to the absorption for this transition has been calculated by using the master equation method in linear response theory. Numerical simulations are performed for the real and imaginary parts of the susceptibility for a photonic band gap material whose gap-midgap ratio is 21%. It is found that when resonance frequencies lie within the band, the medium becomes transparent under the action of the strong pump laser field. More interesting results are found when one of the resonance frequencies lies at the band edge and within the band gap. When the resonance frequency lies at the band edge, the medium becomes nontransparent even under a strong pump laser field. On the other hand, when the resonance frequency lies within the band gap, the medium becomes transparent even under a weak pump laser field. In summary, we found that the medium can be transformed from the transparent state to the nontransparent state just by changing the location of the resonance frequency. We call these two effects anomalous electromagnetically induced transparency

Maximizing band gaps in plate structures

DEFF Research Database (Denmark)

Halkjær, Søren; Sigmund, Ole; Jensen, Jakob Søndergaard

2006-01-01

periodic plate using Bloch theory, which conveniently reduces the maximization problem to that of a single base cell. Secondly, we construct a finite periodic plate using a number of the optimized base cells in a postprocessed version. The dynamic properties of the finite plate are investigated......Band gaps, i.e., frequency ranges in which waves cannot propagate, can be found in elastic structures for which there is a certain periodic modulation of the material properties or structure. In this paper, we maximize the band gap size for bending waves in a Mindlin plate. We analyze an infinite...... theoretically and experimentally and the issue of finite size effects is addressed....

Phase change and optical band gap behavior of Se0.8S0.2 chalcogenide glass films

International Nuclear Information System (INIS)

Abdel Rafea, M.; Farid, Huda

2009-01-01

Se 0.8 S 0.2 chalcogenide glass films have been prepared by thermal vacuum evaporation technique with thickness 583 nm. Annealing process at T ≥ 333 K crystallizes the films and nanostructured films are formed. The crystallite size was increased to 24 nm as the annealing temperature increased to 373 K. Orthorhombic crystalline system was identified for the annealed films. SEM micrographs show that films consist of two parallel surfaces and the thickness was determined by cross section imaging. The optical transmittance is characterized by interference patterns as a result of these two parallel surfaces, besides their average value at longer wavelength decreases as a result of annealing process. The band gap, E g is red shifted due to crystallization by annealing. As the phase of the films changes from amorphous to crystalline in the annealing temperature range 333-363 K, a non sharp change of the band gap (E g ) is observed. This change was explained by Brus's model of the energy gap confinement behavior of the nanostructured films. The optical refractive index increases suddenly when the system starts to be crystallized by annealing

APS linac klystron and accelerating structure gain measurements and klystron PFN voltage regulation requirements

International Nuclear Information System (INIS)

Sereno, N.S.

1997-01-01

This note details measurements of the APS positron linac klystron and accelerating structure gain and presents an analysis of the data using fits to simple mathematical models. The models are used to investigate the sensitivity of the energy dependence of the output positron beam to klystron parameters. The gain measurements are separated into two parts: first, the energy gains of the accelerating structures of the positron linac are measured as a function of output power of the klystron; second, the klystron output power is measured as a function of input drive power and pulse forming network (PFN) voltage. This note concentrates on the positron linac rf and its performance as it directly affects the energy stability of the positron beam injected into the positron accumulator ring (PAR). Ultimately it is important to be able to minimize beam energy variations to maximize the PAR accumulation efficiency

Amended proposal for R ampersand D on a cluster klystron

International Nuclear Information System (INIS)

Fernow, R.C.; Fischer, J.; Gallardo, J.C.; Kirk, H.G.; Ko, S.K.; Palmer, R.B.; Ulc, S.; Wang, H.

1993-01-01

This Proposal is an updated version of FWP submitted in March 1992. Significant work has been done since the original proposal, and much of this is reported on in this update. In addition there have been several changes made, some in response to suggestions made by the three reviews sent to us in December, 1992. The new information and changes include: Technical information on the proposed design of the magnetron gun, the magnet, acceleration gap, and electrical system (including a comment on efficiency loss due to high-voltage leakage current). Modification of the phase I and II tests to allow operation of the gun and klystron off the axis of the magnet, thus simulating the magnet situation when multiple beams are used. Modification of phases III and IV to test a cluster of three beams: first a three beam gun, and then three beams with a klystron on one of them. We have added a phase V which would be the testing of a full three-beam demonstration klystron. The mod-anode pulser would now be located on the high voltage deck instead of externally. Power for the pulser and other high voltage components would now be provided by an isolation transformer instead of from a lead battery. We believe these changes have improved the proposed program and thank the reviewers for their constructive suggestions. The design is still evolving. Relatively little work has been done on the detailed klystron design, and none on the beam dump

A high-order mode extended interaction klystron at 0.34 THz

Science.gov (United States)

Wang, Dongyang; Wang, Guangqiang; Wang, Jianguo; Li, Shuang; Zeng, Peng; Teng, Yan

2017-02-01

We propose the concept of high-order mode extended interaction klystron (EIK) at the terahertz band. Compared to the conventional fundamental mode EIK, it operates at the TM31-2π mode, and its remarkable advantage is to obtain a large structure and good performance. The proposed EIK consists of five identical cavities with five gaps in each cavity. The method is discussed to suppress the mode competition and self-oscillation in the high-order mode cavity. Particle-in-cell simulation demonstrates that the EIK indeed operates at TM31-2π mode without self-oscillation while other modes are well suppressed. Driven by the electron beam with a voltage of 15 kV and a current of 0.3 A, the saturation gain of 43 dB and the output power of 60 W are achieved at the center frequency of 342.4 GHz. The EIK operating at high-order mode seems a promising approach to generate high power terahertz waves.

Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

International Nuclear Information System (INIS)

Alarcón-Lladó, Esther; Brazzini, Tommaso; Ager, Joel W

2016-01-01

Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, the spectral feature at the expected position of the ( E 1 , A 1 ) longitudinal optical (LO) near 590 cm −1 shifts to lower frequency. The shift is reversibly controlled with the applied gate potential, which clearly demonstrates the surface origin of this feature. The result is interpreted within the framework of a Martin double resonance, where the surface functions as a planar defect, allowing the scattering of long wavevector phonons. The allowed wavevector range, and hence the frequency, is modulated by the electron accumulation due to band gap narrowing. A surface band gap reduction of over 500 meV is estimated for the conditions of maximum electron accumulation. Under conditions of electron depletion, the full InN bandgap ( E g   =  0.65 eV) is expected at the surface. The drastic change in the surface band gap is expected to influence the transport properties of devices which utilize the surface electron accumulation layer. (paper)

Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

Science.gov (United States)

Alarcón-Lladó, Esther; Brazzini, Tommaso; Ager, Joel W.

2016-06-01

Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, the spectral feature at the expected position of the (E 1, A 1) longitudinal optical (LO) near 590 cm-1 shifts to lower frequency. The shift is reversibly controlled with the applied gate potential, which clearly demonstrates the surface origin of this feature. The result is interpreted within the framework of a Martin double resonance, where the surface functions as a planar defect, allowing the scattering of long wavevector phonons. The allowed wavevector range, and hence the frequency, is modulated by the electron accumulation due to band gap narrowing. A surface band gap reduction of over 500 meV is estimated for the conditions of maximum electron accumulation. Under conditions of electron depletion, the full InN bandgap (E g  =  0.65 eV) is expected at the surface. The drastic change in the surface band gap is expected to influence the transport properties of devices which utilize the surface electron accumulation layer.

Engineering design and fabrication of X-Band components

CERN Document Server

Filippova, M; Solodko, A; Riddone, G; Syratchev, I

2011-01-01

The CLIC RF frequency has been changed in 2008 from the initial 30 GHz to the European X-band 11.994 GHz permitting beam independent power production using klystrons for the accelerating structure testing. X-band klystron test facilities at 11.424 GHz are operated at SLAC and at KEK [1], and they are used by the CLIC study in the framework of the X-band structure collaboration for testing accelerating structures scaled to that frequency [2]. CERN is currently building a klystron test-stand operating at 11.994 GHz. In addition X-FEL projects at PSI and Sincrotrone Trieste operate at 11.4 GHz. Therefore several RF components accommodating frequencies from 11.424 to 11.994 GHz are required. The engineering design of these RF components (high power and compact loads, bi-directional couplers, X-band splitters, hybrids, phase shifters, variable power attenuators) and the main fabrication processes are presented here.

Empirical correction for PM7 band gaps of transition-metal oxides.

Science.gov (United States)

Liu, Xiang; Sohlberg, Karl

2016-01-01

A post-calculation correction is established for PM7 band gaps of transition-metal oxides. The correction is based on the charge on the metal cation of interest, as obtained from MOPAC PM7 calculations. Application of the correction reduces the average error in the PM7 band gap from ~3 eV to ~1 eV. The residual error after correction is shown to be uncorrelated to the Hartree-Fock method upon which PM7 is based. Graphical Abstract Comparison between calculated band gaps and experimental band gaps for binary oxides. The orange crosses are for corrected PM7 band gaps. Blue squares are uncorrected values. The orange crosses fall closer to the diagonal dashed line, showing an overall improvement of the accuracy of calculated values.

High power tests of X-band RF windows at KEK

Energy Technology Data Exchange (ETDEWEB)

Otake, Yuji [Earthquake Research Inst., Tokyo Univ., Tokyo (Japan); Tokumoto, Shuichi; Kazakov, Sergei Yu.; Odagiri, Junichi; Mizuno, Hajime

1997-04-01

Various RF windows comprising a short pill-box, a long pill-box, a TW (traveling wave)-mode and three TE11-mode horn types have been developed for an X-band high-power pulse klystron with two output windows for JLC (Japan Linear Collider). The output RF power of the klystron is designed to be 130 MW with the 800 ns pulse duration. Since this X-band klystron has two output windows, the maximum RF power of the window must be over 85 MW. The design principle for the windows is to reduce the RF-power density and/or the electric-field strength at the ceramic part compared with that of an ordinary pill-box-type window. Their reduction is effective to increase the handling RF power of the window. To confirm that the difference among the electric-field strengths depends on their RF structures, High-power tests of the above-mentioned windows were successfully carried out using a traveling-wave resonator (TWR) for the horns and the TW-mode type and, installing them directly to klystron output waveguides for the short and long pill-box type. Based upon the operation experience of S-band windows, two kinds of ceramic materials were used for these tests. The TE11-mode 1/2{lambda}g-1 window was tested up to the RF peak-power of 84 MW with the 700 ns pulse duration in the TWR. (J.P.N)

Performance of the SLAC Linear Collider klystrons

International Nuclear Information System (INIS)

Allen, M.A.; Fowkes, W.R.; Koontz, R.F.; Schwarz, H.D.; Seeman, J.T.; Vlieks, A.E.

1987-01-01

There are now 200 new, high power 5045 klystrons installed on the two-mile Stanford Linear Accelerator. Peak power per klystron averages over 63 MW. Average energy contribution is above 240 MeV per station. Electron beam energy has been measured as high as 53 GeV. Energy instability due to kylstron malfunction is less than 0.2%. The installed klystrons have logged over one million operating hours with close to 20,00 klystron hours cumulative operating time between failures. Data is being accumulated on klystron operation and failure modes with failure signatures starting to become apparent. To date, no wholesale failure modes have surfaced that would impair the SLAC linear Collider (SLC) program

Understanding band gaps of solids in generalized Kohn-Sham theory.

Science.gov (United States)

Perdew, John P; Yang, Weitao; Burke, Kieron; Yang, Zenghui; Gross, Eberhard K U; Scheffler, Matthias; Scuseria, Gustavo E; Henderson, Thomas M; Zhang, Igor Ying; Ruzsinszky, Adrienn; Peng, Haowei; Sun, Jianwei; Trushin, Egor; Görling, Andreas

2017-03-14

The fundamental energy gap of a periodic solid distinguishes insulators from metals and characterizes low-energy single-electron excitations. However, the gap in the band structure of the exact multiplicative Kohn-Sham (KS) potential substantially underestimates the fundamental gap, a major limitation of KS density-functional theory. Here, we give a simple proof of a theorem: In generalized KS theory (GKS), the band gap of an extended system equals the fundamental gap for the approximate functional if the GKS potential operator is continuous and the density change is delocalized when an electron or hole is added. Our theorem explains how GKS band gaps from metageneralized gradient approximations (meta-GGAs) and hybrid functionals can be more realistic than those from GGAs or even from the exact KS potential. The theorem also follows from earlier work. The band edges in the GKS one-electron spectrum are also related to measurable energies. A linear chain of hydrogen molecules, solid aluminum arsenide, and solid argon provide numerical illustrations.

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array.

Science.gov (United States)

Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin

2015-06-23

A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

Science.gov (United States)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Symmetries and band gaps in nanoribbons

Science.gov (United States)

Zhang, Zhiwei; Tian, Yiteng; Fernando, Gayanath; Kocharian, Armen

In ideal graphene-like systems, time reversal and sublattice symmetries preserve the degeneracies at the Dirac point(s). We have examined such degeneracies in the band structure as well as the transport properties in various arm-twisted (graphene-related) nanoribbons. A twist angle is defined such that at 0 degrees the ribbon is a rectangular ribbon and at 60 degrees the ribbon is cut from a honeycomb lattice. Using model Hamiltonians and first principles calculations in these nanoribbons with Z2 topology, we have monitored the band structure as a function of the twist angle θ. In twisted ribbons, it turns out that the introduction of an extra hopping term leads to a gap opening. We have also calculated the size and temperature broadening effects in similar ribbons in addition to Rashba-induced transport properties. The authors acknowledge the computing facilities provided by the Center for Functional Nanomaterials, Brookhaven National Laboratory supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No.DE-AC02- 98CH10886.

PEP-II prototype klystron

International Nuclear Information System (INIS)

Fowkes, W.R.; Caryotakis, G.; Lee, T.G.; Pearson, C.; Wright, E.L.

1993-04-01

A 540-kW continuous-wave (cw) klystron operating at 476 MHz was developed for use as a power source for testing PEP-II rf accelerating cavities and rf windows. It also serves as a prototype for a 1.2 MW cw klystron presently being developed as a potential rf source for asymmetric colliding ring use. The design incorporates the concepts and many of the parts used in the original 353 MHz PEP klystron developed sixteen years ago. The superior computer simulation codes available today result in improved performance with the cavity frequencies, drift lengths, and output circuit optimized for the higher frequency.The design and operating results of this tube are described with particular emphasis on the factors which affect efficiency and stability

Band gap engineering of BC2N for nanoelectronic applications

Science.gov (United States)

Lim, Wei Hong; Hamzah, Afiq; Ahmadi, Mohammad Taghi; Ismail, Razali

2017-12-01

The BC2N as an example of boron-carbon-nitride (BCN), has the analogous structure as the graphene and boron nitride. It is predicted to have controllable electronic properties. Therefore, the analytical study on the engineer-able band gap of the BC2N is carried out based on the schematic structure of BC2N. The Nearest Neighbour Tight Binding (NNTB) model is employed with the dispersion relation and the density of state (DOS) as the main band gap analysing parameter. The results show that the hopping integrals having the significant effect on the band gap, band structure and DOS of BC2N nanowire (BC2NNW) need to be taken into consideration. The presented model indicates consistent trends with the published computational results around the Dirac points with the extracted band gap of 0.12 eV. Also, it is distinguished that wide energy gap of boron nitride (BN) is successfully narrowed by this carbon doped material which assures the application of BC2N on the nanoelectronics and optoelectronics in the near future.

Grain size dependent optical band gap of CdI2 films

Indian Academy of Sciences (India)

Unknown

absorption data near band edge can be fitted to an indirect band gap of 3 eV. The dependence of band gap ... while to carry out the optical studies on CdI2 films in order to .... replotted as (αhν)1/2 vs hν to determine indirect gap as shown in the ...

Predicting a graphene-like WB4 nanosheet with a double Dirac cone, an ultra-high Fermi velocity and significant gap opening by spin-orbit coupling.

Science.gov (United States)

Zhang, Chunmei; Jiao, Yalong; Ma, Fengxian; Bottle, Steven; Zhao, Mingwen; Chen, Zhongfang; Du, Aijun

2017-02-15

The zero-band gap nature of graphene prevents it from performing as a semi-conductor in modern electronics. Although various graphene modification strategies have been developed to address this limitation, the very small band gap of these materials and the suppressed charge carrier mobility of the devices developed still significantly hinder graphene's applications. In this work, a two dimensional (2D) WB 4 monolayer, which exhibits a double Dirac cone, was conceived and assessed using density functional theory (DFT) methods, which would provide a sizable band gap while maintaining higher charge mobility with a Fermi velocity of 1.099 × 10 6 m s -1 . Strong spin-orbit-coupling can generate an observable band gap of up to 0.27 eV that primarily originates from the d-orbit of the heavy metal atom W; therefore a 2D WB 4 nanosheet would be operable at room temperature (T = 300 K) and would be a promising candidate to fabricate nanoelectronics in the upcoming post-silicon era. The phonon-spectrum and ab initio molecular dynamics calculations further demonstrate the dynamic and thermal stability of such nanosheets, thus, suggesting a potentially synthesizable Dirac material.

Charge separation dynamics in a narrow band gap polymer-PbS nanocrystal blend for efficient hybrid solar cells

NARCIS (Netherlands)

Piliego, Claudia; Manca, Marianna; Kroon, Renee; Yarema, Maksym; Szendrei, Krisztina; Andersson, Mats R.; Heiss, Wolfgang; Loi, Maria A.

2012-01-01

We have demonstrated efficient hybrid solar cells based on lead sulfide (PbS) nanocrystals and a narrow band gap polymer, poly[{2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl}-alt-{[2,2'-(1,4-phenylene)bis-thiophene]-5,5'-diyl}], (PDPPTPT). An opportune mixing of

gamma-induced modification on optical band gap of CR-39 SSNTD

International Nuclear Information System (INIS)

Zaki, M.F.

2010-01-01

effect of gamma irradiation on optical absorption of nuclear track detectors like CR-39 was studied at different absorbed doses using ultraviolet-visible (UV-VIS)spectroscopy. the existence of the peaks, their shifting and broadening as a result of gamma irradiation has been discussed. the width of the tail of localized states in the band gap (E u )was evaluated using the Urbach edge method. finally the indirect and direct band gap in pristine and gamma irradiated CR-39 have been determined. the values of indirect band gap have been found to be lower than the corresponding values of direct band gap. a decrease in the optical energy gap with increasing the gamma absorbed dose can be discussed on the basis of gamma-irradiation-induced defects in the CR-39. the correlation between optical band gap and the number of carbon atoms in a cluster with modified Tauc's equation has been discussed in case of CR-39.

Controllable Synthesis of Band Gap-Tunable and Monolayer Transition Metal Dichalcogenide Alloys

Directory of Open Access Journals (Sweden)

Sheng-Han eSu

2014-07-01

Full Text Available The electronic and optical properties of transition metal dichalcogenide (TMD materials are directly governed by their energy gap; thus, the band gap engineering has become an important topic recently. Theoretical and some experimental results have indicated that these monolayer TMD alloys exhibit direct-gap properties and remain stable at room temperature, making them attractive for optoelectronic applications. Here we systematically compared the two approaches of forming MoS2xSe2(1-x monolayer alloys: selenization of MoS2 and sulfurization of MoSe2. The optical energy gap of as-grown CVD MoS2 can be continuously modulated from 1.86 eV (667 nm to 1.57 eV (790 nm controllable by the reaction temperature. Spectroscopic and microscopic evidences show that the Mo-S bonds can be replaced by the Mo-Se bonds in a random and homogeneous manner. By contrast, the replacement of Mo-Se by Mo-S does not randomly occur in the MoSe2 lattice, where the reaction preferentially occurs along the crystalline orientation of MoSe2 and thus the MoSe2/MoS2 biphases are easily observed in the alloys, which makes the optical band gap of these alloys distinctly different. Therefore, the selenization of metal disulfide is preferred and the proposed synthetic strategy opens up a simple route to control the atomic structure as well as optical properties of monolayer TMD alloys.

Induction linac driven relativistic klystron and cyclotron autoresonance maser experiments

International Nuclear Information System (INIS)

Goodman, D.L.; Birx, D.L.; Danly, B.G.

1991-01-01

In this paper design and experimental results are presented from two high power microwave generation experiments utilizing a high repetition rate induction linac generated electron beam. A relativistic klystron has generated more than 100 MW microwave pulses in X-band for 50 ns without pulse shortening or breakdown. design studies for the first cyclotron autoresonance maser (CARM) amplifier using an induction linac electron beam are also presented

Band gap tuning of amorphous Al oxides by Zr alloying

Energy Technology Data Exchange (ETDEWEB)

Canulescu, S., E-mail: stec@fotonik.dtu.dk; Schou, J. [Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde (Denmark); Jones, N. C.; Hoffmann, S. V. [ISA, Department of Physics and Astronomy, Aarhus University, 8000 Aarhus (Denmark); Borca, C. N.; Piamonteze, C. [Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Rechendorff, K.; Nielsen, L. P.; Almtoft, K. P. [Danish Technological Institute, Kongsvang Alle 29, 8000 Aarhus (Denmark); Gudla, V. C.; Bordo, K.; Ambat, R. [Department of Mechanical Engineering, Technical University of Denmark, 2800 Kgs-Lyngby (Denmark)

2016-08-29

The optical band gap and electronic structure of amorphous Al-Zr mixed oxides with Zr content ranging from 4.8 to 21.9% were determined using vacuum ultraviolet and X-ray absorption spectroscopy. The light scattering by the nano-porous structure of alumina at low wavelengths was estimated based on the Mie scattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on the Zr content deviates from linearity and decreases from 7.3 eV for pure anodized Al{sub 2}O{sub 3} to 6.45 eV for Al-Zr mixed oxides with a Zr content of 21.9%. With increasing Zr content, the conduction band minimum changes non-linearly as well. Fitting of the energy band gap values resulted in a bowing parameter of ∼2 eV. The band gap bowing of the mixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction band minimum of anodized Al{sub 2}O{sub 3}.

Two-dimensional inorganic–organic hybrid semiconductors composed of double-layered ZnS and monoamines with aromatic and heterocyclic aliphatic rings: Syntheses, structures, and properties

International Nuclear Information System (INIS)

Wang, Sujing; Li, Jing

2015-01-01

As an addition to the II–VI based inorganic–organic hybrid semiconductor family, five new two-dimensional (2D) double-layered structures have been synthesized employing monoamines with different aromatic or heterocyclic aliphatic rings. Zn 2 S 2 (bza) (1), Zn 2 S 2 (mbza) (2), Zn 2 S 2 (fbza) (3), Zn 2 S 2 (pca) (4), and Zn 2 S 2 (thfa) (5) (bza=benzylamine, mbza=4-methoxybenzylamine, fbza=4-flurobenzylamine, pca=3-picolylamine, and thfa=tetrahydrofurfurylamine) are prepared by solvothermal reactions and characterized by different analytical methods, including powder X-ray diffraction, optical diffuse reflection, thermogravimetric analysis and photoluminescence spectroscopy. The powder X-ray diffraction patterns show that all five compounds adopt 2D double-layered structures. Optical diffuse reflectance spectra of these compounds suggest that they have notably lower band gaps than those of the similar compounds composed of aliphatic alkyl amines. Their photoluminescence properties and thermal stability are also analyzed. - Graphical abstract: Five new members of two-dimensional double-layered 2D-Zn 2 S 2 (L) (L=Ligand) structures employing monoamines with different aromatic or heterocyclic aliphatic rings have been designed, synthesized, and characterized. - Highlights: • A new sub-family of II-VI based hybrid semiconductors are designed, synthesized, and structurally characterized using amines with aromatic or aliphatic cyclic rings. • These compounds have notably lower band gaps than those made of aliphatic alkyl amines, greatly broadening the range of band gaps of this material family. • They emit strongly with systematically tunable emission intensity and energy

Transport in bilayer and trilayer graphene: band gap engineering and band structure tuning

Science.gov (United States)

Zhu, Jun

2014-03-01

Controlling the stacking order of atomically thin 2D materials offers a powerful tool to control their properties. Linearly dispersed bands become hyperbolic in Bernal (AB) stacked bilayer graphene (BLG). Both Bernal (ABA) and rhombohedral (ABC) stacking occur in trilayer graphene (TLG), producing distinct band structures and electronic properties. A symmetry-breaking electric field perpendicular to the sample plane can further modify the band structures of BLG and TLG. In this talk, I will describe our experimental effort in these directions using dual-gated devices. Using thin HfO2 film deposited by ALD as gate dielectric, we are able to apply large displacement fields D > 6 V/nm and observe the opening and saturation of the field-induced band gap Eg in bilayer and ABC-stacked trilayer graphene, where the conduction in the mid gap changes by more than six decades. Its field and temperature dependence highlights the crucial role played by Coulomb disorder in facilitating hopping conduction and suppressing the effect of Eg in the tens of meV regime. In contrast, mid-gap conduction decreases with increasing D much more rapidly in clean h-BN dual-gated devices. Our studies also show the evolution of the band structure in ABA-stacked TLG, in particular the splitting of the Dirac-like bands in large D field and the signatures of two-band transport at high carrier densities. Comparison to theory reveals the need for more sophisticated treatment of electronic screening beyond self-consistent Hartree calculations to accurately predict the band structures of trilayer graphene and graphenic materials in general.

Large area modules based on low band gap polymers

DEFF Research Database (Denmark)

Bundgaard, Eva; Krebs, Frederik C

2010-01-01

The use of three low band gap polymers in large area roll-to-roll coated modules is demonstrated. The polymers were prepared by a Stille cross coupling polymerization and all had a band gap around 1.6 eV. The polymers were first tested in small area organic photovoltaic devices which showed...

Band gap tuning of amorphous Al oxides by Zr alloying

DEFF Research Database (Denmark)

Canulescu, Stela; Jones, N. C.; Borca, C. N.

2016-01-01

minimum changes non-linearly as well.Fitting of the energy band gap values resulted in a bowing parameter of 2 eV. The band gap bowing of themixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction bandminimum of anodized Al2O3.......The optical band gap and electronic structure of amorphous Al-Zr mixed oxides, with Zr content ranging from4.8 to 21.9% were determined using vacuum ultraviolet (VUV) and X-ray absorption spectroscopy (XAS). Thelight scattering by the nano-porous structure of alumina at low wavelengths...... was estimated based on the Miescattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on Zr content deviatesfrom linearity and decreases from 7.3 eV for pure anodized Al2O3 to 6.45 eV for Al-Zr mixed oxide with Zrcontent of 21.9%. With increasing Zr content, the conduction band...

A coupler for parasitic mode diagnosis in an X-band triaxial klystron amplifier

Directory of Open Access Journals (Sweden)

Wei Zhang

2017-10-01

Full Text Available The traditional methods of parasitic mode excitation diagnosis in an X-band triaxial klystron amplifier (TKA meet two difficulties: limited installation space and vacuum sealing. In order to solve these issues, a simple and compact coupler with good sealing performance, which can prevent air flow between the main and the auxiliary waveguides, is proposed and investigated experimentally. The coupler is designed with the aperture diffraction theory and the finite-different time-domain (FDTD method. The designed coupler consists of a main coaxial waveguide (for microwave transmission and a rectangular auxiliary waveguide (for parasitic mode diagnosis. The entire coupler structure has been fabricated by macromolecule polymer which is transparent to microwave signal in frequency range of X-band. The metal coating of about 200 microns has been performed through electroplating technique to ensure that the device operates well at high power. A small aperture is made in the metal coating. Hence, microwave can couple through the hole and the wave-transparent medium, whereas air flow is blocked by the wave-transparent medium. The coupling coefficient is analyzed and simulated with CST software. The coupler model is also included in particle-in-cell (PIC simulation with CHIPIC software and the associated parasitic mode excitation is studied. A frequency component of 11.46 GHz is observed in the FFT of the electric field of the drift tube and its corresponding competition mode appears as TE61 mode according to the electric field distribution. Besides, a frequency component of 10.8 GHz is also observed in the FFT of the electric field. After optimization of TE61 mode suppression, an experiment of the TKA with the designed coupler is carried out and the parasitic mode excitation at 10.8 GHz is observed through the designed coupler.

Band gap bowing in quaternary nitride semiconducting alloys

DEFF Research Database (Denmark)

Gorczyka, Isabela; Suski, T.; Christensen, Niels Egede

2011-01-01

Structural properties of InxGayAl1−x−yN alloys are derived from total-energy minimization within the local-density approximation (LDA). The electronic properties are studied by band structure calculations including a semiempirical correction for the “LDA gap error.” The effects of varying...... the composition and atomic arrangements are examined using a supercell geometry. An analytical expression for the band gap is derived for the entire range of compositions. The range of (x, y) values for which InxGayAl1−x−yN is lattice matched to GaN, and the ensuing energy gaps, are given. This range of available...... gaps becomes smaller when In atoms form clusters. Comparison to experimental data is made....

A high peak power S-band switching system for the Advanced Photon Source (APS) Linear Accelerator (Linac)

International Nuclear Information System (INIS)

Grelick, A. E.

1998-01-01

An S-band linear accelerator is the source of particles and front end of the Advanced Photon Source [1] injector. Additionally, it will be used to support a low-energy undulator test line (LEUTL) and to drive a free-electron laser (FEL). To provide maximum linac availability for all uses, an additional modulator-klystron subsystem has been built,and a waveguide-switching and distribution subsystem is now under construction. The combined subsystems provide a hot spare for any of the five S-band transmitters that power the lina cand have been given the additional function of powering an rf gun test stand whenever they are not otherwise needed. Design considerations for the waveguide-switching subsystem, topology selection, timing, control, and system protection provisions are described

Band gap opening in α-graphyne by adsorption of organic molecule

Science.gov (United States)

Majidi, R.; Karami, A. R.

2014-09-01

The lack of a band gap limits the application of graphyne in nanoelectronic devices. We have investigated possibility of opening a band gap in α-graphyne by adsorption of tetracyanoethylene. The electronic property of α-graphyne in the presence of different numbers of tetracyanoethylene has been studied using density functional theory. It is found that charge is transferred from graphyne sheet to tetracyanoethylene molecules. In the presence of this electron acceptor molecule, a semimetal α-graphyne shows semiconducting property. The energy band gap at the Dirac point is enhanced by increasing the number of tetracyanoethylene. Our results provide a simple method to create and control the band gap in α-graphyne.

A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides.

Science.gov (United States)

Linderälv, Christopher; Lindman, Anders; Erhart, Paul

2018-01-04

Wide band gap oxides are versatile materials with numerous applications in research and technology. Many properties of these materials are intimately related to defects, with the most important defect being the oxygen vacancy. Here, using electronic structure calculations, we show that the charge transition level (CTL) and eigenstates associated with oxygen vacancies, which to a large extent determine their electronic properties, are confined to a rather narrow energy range, even while band gap and the electronic structure of the conduction band vary substantially. Vacancies are classified according to their character (deep versus shallow), which shows that the alignment of electronic eigenenergies and CTL can be understood in terms of the transition between cavity-like localized levels in the large band gap limit and strong coupling between conduction band and vacancy states for small to medium band gaps. We consider both conventional and hybrid functionals and demonstrate that the former yields results in very good agreement with the latter provided that band edge alignment is taken into account.

Band gap calculations of the semiconductor BNxP1−x using modified Becke–Johnson approximation

International Nuclear Information System (INIS)

Benkraouda, M.; Amrane, N.

2013-01-01

Highlights: ► The Modified Becke–Johnson scheme gives a very accurate band gap. ► We have shown the invalidity of Vegard’s linear rule for BN x P 1−x . ► The band gap changes with alloy concentration are important in band gap engineering. - Abstract: In this work, the electronic properties of BN, BP and BN x P 1−x compounds have been investigated by means of first-principles density-functional total-energy calculation using the all-electron full potential linear augmented plane-wave method (FP-LAPW). The (FP-LAPW) method was used within the density functional theory (DFT) along with the Engel–Vosko and Becke–Johnson exchange correlation potential. The energy bands along high symmetry directions, the density of states and bowing distributions are calculated. The results have been discussed in terms of previously existing experimental and theoretical data, and comparisons with similar compounds have been made. Analysis of band structure suggests direct and pseudo-direct band gaps for both compounds.

Development of new S-band RF window for stable high-power operation in linear accelerator RF system

Science.gov (United States)

Joo, Youngdo; Lee, Byung-Joon; Kim, Seung-Hwan; Kong, Hyung-Sup; Hwang, Woonha; Roh, Sungjoo; Ryu, Jiwan

2017-09-01

For stable high-power operation, a new RF window is developed in the S-band linear accelerator (Linac) RF systems of the Pohang Light Source-II (PLS-II) and the Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL). The new RF window is designed to mitigate the strength of the electric field at the ceramic disk and also at the waveguide-cavity coupling structure of the conventional RF window. By replacing the pill-box type cavity in the conventional RF window with an overmoded cavity, the electric field component perpendicular to the ceramic disk that caused most of the multipacting breakdowns in the ceramic disk was reduced by an order of magnitude. The reduced electric field at the ceramic disk eliminated the Ti-N coating process on the ceramic surface in the fabrication procedure of the new RF window, preventing the incomplete coating from spoiling the RF transmission and lowering the fabrication cost. The overmoded cavity was coupled with input and output waveguides through dual side-wall coupling irises to reduce the electric field strength at the waveguide-cavity coupling structure and the possibility of mode competitions in the overmoded cavity. A prototype of the new RF window was fabricated and fully tested with the Klystron peak input power, pulse duration and pulse repetition rate of 75 MW, 4.5 μs and 10 Hz, respectively, at the high-power test stand. The first mass-produced new RF window installed in the PLS-II Linac is running in normal operation mode. No fault is reported to date. Plans are being made to install the new RF window to all S-band accelerator RF modules of the PLS-II and PAL-XFEL Linacs. This new RF window may be applied to the output windows of S-band power sources like Klystron as wells as the waveguide windows of accelerator facilities which operate in S-band.

Optimized dipole antennas on photonic band gap crystals

International Nuclear Information System (INIS)

Cheng, S.D.; Biswas, R.; Ozbay, E.; McCalmont, S.; Tuttle, G.; Ho, K.

1995-01-01

Photonic band gap crystals have been used as a perfectly reflecting substrate for planar dipole antennas in the 12--15 GHz regime. The position, orientation, and driving frequency of the dipole antenna on the photonic band gap crystal surface, have been optimized for antenna performance and directionality. Virtually no radiated power is lost to the photonic crystal resulting in gains and radiation efficiencies larger than antennas on other conventional dielectric substrates. copyright 1995 American Institute of Physics

Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.

Science.gov (United States)

Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A

2016-01-29

We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

Band Gap Modulated by Electronic Superlattice in Blue Phosphorene.

Science.gov (United States)

Zhuang, Jincheng; Liu, Chen; Gao, Qian; Liu, Yani; Feng, Haifeng; Xu, Xun; Wang, Jiaou; Zhao, Jijun; Dou, Shi Xue; Hu, Zhenpeng; Du, Yi

2018-05-22

Exploring stable two-dimensional materials with appropriate band gaps and high carrier mobility is highly desirable due to the potential applications in optoelectronic devices. Here, the electronic structures of phosphorene on a Au(111) substrate are investigated by scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. The substrate-induced phosphorene superstructure gives a superlattice potential, leading to a strong band folding effect of the sp band of Au(111) on the band structure. The band gap could be clearly identified in the ARPES results after examining the folded sp band. The value of the energy gap (∼1.1 eV) and the high charge carrier mobility comparable to that of black phosphorus, which is engineered by the tensile strain, are revealed by the combination of ARPES results and DFT calculations. Furthermore, the phosphorene layer on the Au(111) surface displays high surface inertness, leading to the absence of multilayer phosphorene. All these results suggest that the phosphorene on Au(111) could be a promising candidate, not only for fundamental research but also for nanoelectronic and optoelectronic applications.

Systematic design of phononic band-gap materials and structures by topology optimization

DEFF Research Database (Denmark)

Sigmund, Ole; Jensen, Jakob Søndergaard

2003-01-01

Phononic band-gap materials prevent elastic waves in certain frequency ranges from propagating, and they may therefore be used to generate frequency filters, as beam splitters, as sound or vibration protection devices, or as waveguides. In this work we show how topology optimization can be used...... to design and optimize periodic materials and structures exhibiting phononic band gaps. Firstly, we optimize infinitely periodic band-gap materials by maximizing the relative size of the band gaps. Then, finite structures subjected to periodic loading are optimized in order to either minimize the structural...

Relativistic klystron research for linear colliders

International Nuclear Information System (INIS)

Allen, M.A.; Callin, R.S.; Deruyter, H.; Eppley, K.R.; Fant, K.S.; Fowkes, W.R.; Herrmannsfeldt, W.B.; Hoag, H.A.; Koontz, R.F.; Lavine, T.L.; Lee, T.G.; Loew, G.A.; Miller, R.H.; Morton, P.L.; Palmer, R.B.; Paterson, J.M.; Ruth, R.D.; Schwarz, H.D.; Vlieks, A.E.; Wilson, P.B.

1989-01-01

Relativistic klystrons are being developed as a power source for high gradient accelerator applications which include large linear electron-positron colliders, compact accelerators, and FEL sources. The authors have attained 200 MW peak power at 11.4 GHz from a relativistic klystron, and 140 MV/m longitudinal gradient in a short 11.4 GHz accelerator section. In this paper the authors report on the design of our relativistic klystrons, the results of our experiments so far, and some of our plans for the near future

Relativistic klystron research for linear colliders

International Nuclear Information System (INIS)

Allen, M.A.; Callin, R.S.; Deruyter, H.

1988-09-01

Relativistic klystrons are being developed as a power source for high gradient accelerator applications which include large linear electron-positron colliders, compact accelerators, and FEL sources. We have attained 200 MW peak power at 11.4 GHz from a relativistic klystron, and 140 MV/m longitudinal gradient in a short 11.4 GHz accelerator section. We report here on the design of our relativistic klystrons, the results of our experiments so far, and some of our plans for the near future. 5 refs., 9 figs., 1 tab

Band-gap engineering of functional perovskites through quantum confinement and tunneling

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Pandey, Mohnish; Thygesen, Kristian Sommer

2015-01-01

An optimal band gap that allows for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO3...... and BaTaO2N. Starting from an indirect gap of around 3.3 eV for BaSnO3 and a direct gap of 1.8 eV for BaTaO2N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV. The variations of the band gap can be understood in terms of quantum confinement...

Development of multimegawatt klystrons for linear colliders

International Nuclear Information System (INIS)

Caryotakis, G.; Callin, R.; Eppley, K.

1993-04-01

A number of experimental klystrons have been constructed and evaluated at SLAC, KEK and INP, aiming toward output power objectives of 100 and 120 MW at 11.4 GHz (SLAC and KEK respectively) or 150 MW at 14 GHz (INP), with pulse lengths on the order of 1 μs. Since rf breakdown is considered to be the principal mechanism limiting power for such tubes, most of the effort has been concentrated on the design of output circuits that reduce rf gradients by distributing fields over a longer region of interaction. Another klystron component receiving emphasis has been the output window, where the approach for future tubes may be to use a circular TE01-mode, half-wave window. Rest results to date in this continuing international effort are: 50 MW with 1 μs pulses, using a traveling-wave output circuit (SLAC and INP), and 85 MW with 200 ns. pulse (SLAC), using two conventional reentrant, but uncoupled, output cavities. At KEK a klystron with a single, but not reentrant, cavity has produced 80 MW in 50 ns pulses. Finally, Haimson has demonstrated 100 MW at 50 ns with a traveling-wave output. This paper addresses primarily the work performed at SLAC during the last two years

Band gaps in periodically magnetized homogeneous anisotropic media

Science.gov (United States)

Merzlikin, A. M.; Levy, M.; Vinogradov, A. P.; Wu, Z.; Jalali, A. A.

2010-11-01

In [A. M. Merzlikin, A. P. Vinogradov, A. V. Dorofeenko, M. Inoue, M. Levy, A. B. Granovsky, Physica B 394 (2007) 277] it is shown that in anisotropic magnetophotonic crystal made of anisotropic dielectric layers and isotropic magneto-optical layers the magnetization leads to formation of additional band gaps (BG) inside the Brillouin zones. Due to the weakness of the magneto-optical effects the width of these BG is much smaller than that of usual BG forming on the boundaries of Brillouin zones. In the present communication we show that though the anisotropy suppresses magneto-optical effects. An anisotropic magnetophotonic crystal made of anisotropic dielectric layers and anisotropic magneto-optical; the width of additional BG may be much greater than the width of the usual Brillouin BG. Anisotropy tends to suppress Brillouin zone boundary band gap formation because the anisotropy suppresses magneto-optical properties, while degenerate band gap formation occurs around points of effective isotropy and is not suppressed.

Band gap engineering strategy via polarization rotation in perovskite ferroelectrics

International Nuclear Information System (INIS)

Wang, Fenggong; Grinberg, Ilya; Rappe, Andrew M.

2014-01-01

We propose a strategy to engineer the band gaps of perovskite oxide ferroelectrics, supported by first principles calculations. We find that the band gaps of perovskites can be substantially reduced by as much as 1.2 eV through local rhombohedral-to-tetragonal structural transition. Furthermore, the strong polarization of the rhombohedral perovskite is largely preserved by its tetragonal counterpart. The B-cation off-center displacements and the resulting enhancement of the antibonding character in the conduction band give rise to the wider band gaps of the rhombohedral perovskites. The correlation between the structure, polarization orientation, and electronic structure lays a good foundation for understanding the physics of more complex perovskite solid solutions and provides a route for the design of photovoltaic perovskite ferroelectrics

Band gap of two-dimensional fiber-air photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Yang, Shu, E-mail: yangshu5678@163.com; Li, Masha

2016-04-15

A two-dimensional photonic crystal (PC) composed of textile fiber and air is initially discussed in this paper. Textile materials are so called soft materials, which are different from the previous PCs composed of rigid materials. The plain wave expansion method is used to calculate band structure of different PCs by altering component properties or structural parameters. Results show that the dielectric constant of textile fibers, fiber filling ratio and lattice arrangement are effective factors which influence PCs' band gap. Yet lattice constant and fiber diameter make inconspicuous influence on the band gap feature.

Relativistic klystron research for linear colliders

International Nuclear Information System (INIS)

Allen, M.A.; Callin, R.S.; Deruyter, H.; Eppley, K.R.; Fant, K.S.; Fowkes, W.R.; Herrmannesfeldt, W.B.; Higo, T.; Hoag, H.A.; Koontz, R.F.; Lavine, T.L.; Lee, T.G.; Loew, G.A.; Miller, R.H.; Morton, P.L.; Palmer, R.B.; Paterson, J.M.; Ruth, R.D.; Schwarz, H.D.; Takeuchi, Y.; Vlieks, A.E.; Wang, J.W.; Wilson, P.B.; Hopkins, D.B.; Sessler, A.M.; Ryne, R.D.; Westenskow, G.A.; Yu, S.S.

1989-01-01

Relativistic klystrons are being developed as a power source for high gradient accelerator applications which include large linear electron-positron colliders, compact accelerators, and FEL sources. The authors have attained 200MW peak power at 11.4 GHz from a relativistic klystron, and 140 MV/m longitudinal gradient in a short 11.4 GHz accelerator section. They report here on the design of our relativistic klystrons, the results of our experiments so far, and some of our plans for the near future. 5 refs., 9 figs., 1 tab

Waveguide harmonic damper for klystron amplifier

International Nuclear Information System (INIS)

Kang, Y.

1998-01-01

A waveguide harmonic damper was designed for removing the harmonic frequency power from the klystron amplifiers of the APS linac. Straight coaxial probe antennas are used in a rectangular waveguide to form a damper. A linear array of the probe antennas is used on a narrow wall of the rectangular waveguide for damping klystron harmonics while decoupling the fundamental frequency in dominent TE 01 mode. The klystron harmonics can exist in the waveguide as waveguide higher-order modes above cutoff. Computer simulations are made to investigate the waveguide harmonic damping characteristics of the damper

Two-dimensional inorganic–organic hybrid semiconductors composed of double-layered ZnS and monoamines with aromatic and heterocyclic aliphatic rings: Syntheses, structures, and properties

Energy Technology Data Exchange (ETDEWEB)

Wang, Sujing; Li, Jing, E-mail: jingli@rutgers.edu

2015-04-15

As an addition to the II–VI based inorganic–organic hybrid semiconductor family, five new two-dimensional (2D) double-layered structures have been synthesized employing monoamines with different aromatic or heterocyclic aliphatic rings. Zn{sub 2}S{sub 2}(bza) (1), Zn{sub 2}S{sub 2}(mbza) (2), Zn{sub 2}S{sub 2}(fbza) (3), Zn{sub 2}S{sub 2}(pca) (4), and Zn{sub 2}S{sub 2}(thfa) (5) (bza=benzylamine, mbza=4-methoxybenzylamine, fbza=4-flurobenzylamine, pca=3-picolylamine, and thfa=tetrahydrofurfurylamine) are prepared by solvothermal reactions and characterized by different analytical methods, including powder X-ray diffraction, optical diffuse reflection, thermogravimetric analysis and photoluminescence spectroscopy. The powder X-ray diffraction patterns show that all five compounds adopt 2D double-layered structures. Optical diffuse reflectance spectra of these compounds suggest that they have notably lower band gaps than those of the similar compounds composed of aliphatic alkyl amines. Their photoluminescence properties and thermal stability are also analyzed. - Graphical abstract: Five new members of two-dimensional double-layered 2D-Zn{sub 2}S{sub 2}(L) (L=Ligand) structures employing monoamines with different aromatic or heterocyclic aliphatic rings have been designed, synthesized, and characterized. - Highlights: • A new sub-family of II-VI based hybrid semiconductors are designed, synthesized, and structurally characterized using amines with aromatic or aliphatic cyclic rings. • These compounds have notably lower band gaps than those made of aliphatic alkyl amines, greatly broadening the range of band gaps of this material family. • They emit strongly with systematically tunable emission intensity and energy.

Measurements of quasiparticle tunneling dynamics in a band-gap-engineered transmon qubit.

Science.gov (United States)

Sun, L; DiCarlo, L; Reed, M D; Catelani, G; Bishop, Lev S; Schuster, D I; Johnson, B R; Yang, Ge A; Frunzio, L; Glazman, L; Devoret, M H; Schoelkopf, R J

2012-06-08

We have engineered the band gap profile of transmon qubits by combining oxygen-doped Al for tunnel junction electrodes and clean Al as quasiparticle traps to investigate energy relaxation due to quasiparticle tunneling. The relaxation time T1 of the qubits is shown to be insensitive to this band gap engineering. Operating at relatively low-E(J)/E(C) makes the transmon transition frequency distinctly dependent on the charge parity, allowing us to detect the quasiparticles tunneling across the qubit junction. Quasiparticle kinetics have been studied by monitoring the frequency switching due to even-odd parity change in real time. It shows the switching time is faster than 10  μs, indicating quasiparticle-induced relaxation has to be reduced to achieve T1 much longer than 100  μs.

Photonic band gap materials: design, synthesis, and applications

International Nuclear Information System (INIS)

John, S.

2000-01-01

Full text: Unlike semiconductors which facilitate the coherent propagation of electrons, photonic band gap (PBG) materials execute their novel functions through the coherent localization of photons. I review and discuss our recent synthesis of a large scale three-dimensional silicon photonic crystal with a complete photonic band gap near 1.5 microns. When a PBG material is doped with impurity atoms which have an electronic transition that lies within the gap, spontaneous emission of light from the atom is inhibited. Inside the gap, the photon forms a bound state to the atom. Outside the gap, radiative dynamics in the colored vacuum is highly non Markovian. I discuss the influence of these memory effects on laser action. When spontaneous emission is absent, the next order radiative effect (resonance dipole dipole interaction between atoms) must be incorporated leading to anomalous nonlinear optical effects which occur at a much lower threshold than in ordinary vacuum. I describe the collective switching of two-level atoms near a photonic band edge, by external laser field, from a passive state to one exhibiting population inversion. This effect is forbidden in ordinary vacuum. However, in the context of a PBG material, this effect may be utilized for an all-optical transistor. Finally, I discuss the prospects for a phase sensitive, single atom quantum memory device, onto which information may be written by an external laser pulse

Band gap of β-PtO2 from first-principles

Directory of Open Access Journals (Sweden)

Yong Yang

2012-06-01

Full Text Available We studied the band gap of β-PtO2 using first-principles calculations based on density functional theory (DFT. The results are obtained within the framework of the generalized gradient approximation (GGA, GGA+U, GW, and the hybrid functional methods. For the different types of calculations, the calculated band gap increases from ∼0.46 eV to 1.80 eV. In particular, the band gap by GW (conventional and self-consistent calculation shows a tendency of converging to ∼1.25 ± 0.05 eV. The effect of on-site Coulomb interaction on the bonding characteristics is also analyzed.

Photonic band gap spectra in Octonacci metamaterial quasicrystals

Science.gov (United States)

Brandão, E. R.; Vasconcelos, M. S.; Albuquerque, E. L.; Fulco, U. L.

2017-02-01

In this work we study theoretically the photonic band gap spectra for a one-dimensional quasicrystal made up of SiO2 (layer A) and a metamaterial (layer B) organized following the Octonacci sequence, where its nth-stage Sn is given by the inflation rule Sn =Sn - 1Sn - 2Sn - 1 for n ≥ 3 , with initial conditions S1 = A and S2 = B . The metamaterial is characterized by a frequency dependent electric permittivity ε(ω) and magnetic permeability μ(ω) . The polariton dispersion relation is obtained analytically by employing a theoretical calculation based on a transfer-matrix approach. A quantitative analysis of the spectra is then discussed, stressing the distribution of the allowed photonic band widths for high generations of the Octonacci structure, which depict a self-similar scaling property behavior, with a power law depending on the common in-plane wavevector kx .

Test result of 5 GHz, 500 kW CW prototype klystron for KSTAR LHCD system

Energy Technology Data Exchange (ETDEWEB)

Do, H., E-mail: heejindo@nfri.re.kr [Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Park, S. [Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Jeong, J.H.; Bae, Y.S.; Yang, H.L. [National Fusion Research Institute, Daejeon 350-333 (Korea, Republic of); Delpech, L.; Magne, R.; Hoang, G.T. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); Park, H.; Cho, M.H.; Namkung, W. [Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

2011-10-15

A 5 GHz LHCD system is being designed for current drive and profile modification necessary for AT mode and steady-state operation of the KSTAR tokamak. A prototype 500 kW CW klystron operating at 5 GHz was developed for the steady-state RF source. In this klystron, a multi-cell cavity is introduced to reduce cavity voltage and ohmic power loss. The klystron is designed with a triode system for optimization of gain, efficiency and beam control. The high voltage for the cathode is turned by using a thyristor switching system at the low voltage transformer unit. For anode voltage control, a mod-anode voltage divider system is used which utilize the parallel-circuit of the FET switch and Zener diodes. The RF output power of the klystron was 300 kW for 800 s and 450 kW for 20 s. The maximal temperature at collector top surface was 83 deg. C and power loss at the tube body did not exceed 10 kW, the interlock level for the protection of the klystron. Detailed results of the klystron system test and commissioning are presented.

The Klynac: An integrated klystron and linear accelerator

International Nuclear Information System (INIS)

Potter, James M.; Schwellenbach, David; Meidinger, Alfred

2013-01-01

The Klynac concept integrates an electron gun, a radio frequency (RF) power source, and a coupled-cavity linear accelerator into a single resonant system. The klystron is essentially a conventional klystron structure with an input cavity, some number of intermediate cavities and an output cavity. The accelerator structure is, likewise, a conventional on-axis coupled structure. The uniqueness is the means of coupling the klystron output cavity to the accelerator. The coupler is a resonant coupler rather than an ordinary transmission line. The geometry of such a system need not be coaxial. However, if the klystron and accelerator are coaxial we can eliminate the need for a separate cathode for the accelerator by injecting some of the klystron beam into the accelerator. Such a device can be made cylindrical which is ideal for some applications.

Sub-band-gap absorption in Ga2O3

Science.gov (United States)

Peelaers, Hartwin; Van de Walle, Chris G.

2017-10-01

β-Ga2O3 is a transparent conducting oxide that, due to its large bandgap of 4.8 eV, exhibits transparency into the UV. However, the free carriers that enable the conductivity can absorb light. We study the effect of free carriers on the properties of Ga2O3 using hybrid density functional theory. The presence of free carriers leads to sub-band-gap absorption and a Burstein-Moss shift in the onset of absorption. We find that for a concentration of 1020 carriers, the Fermi level is located 0.23 eV above the conduction-band minimum. This leads to an increase in the electron effective mass from 0.27-0.28 me to 0.35-0.37 me and a sub-band-gap absorption band with a peak value of 0.6 × 103 cm-1 at 3.37 eV for light polarized along the x or z direction. Both across-the-gap and free-carrier absorption depend strongly on the polarization of the incoming light. We also provide parametrizations of the conduction-band shape and the effective mass as a function of the Fermi level.

Estimation of photonic band gap in the hollow core cylindrical multilayer structure

Science.gov (United States)

Chourasia, Ritesh Kumar; Singh, Vivek

2018-04-01

The propagation characteristic of two hollow core cylindrical multilayer structures having high and low refractive index contrast of cladding regions have been studied and compared at two design wavelengths i.e. 1550 nm and 632.8 nm. With the help of transfer matrix method a relation between the incoming light wave and outgoing light wave has been developed using the boundary matching technique. In high refractive index contrast, small numbers of layers are sufficient to provide perfect band gap in both design wavelengths. The spectral position and width of band gap is highly depending on the optical path of incident light in all considered cases. For sensing application, the sensitivity of waveguide can be obtained either by monitoring the width of photonic band gap or by monitoring the spectral shift of photonic band gap. Change in the width of photonic band gap with the core refractive index is larger in high refractive index contrast of cladding materials. However, in the case of monitoring the spectral shift of band gap, the obtained sensitivity is large for low refractive index contrast of cladding materials and further it increases with increase of design wavelength.

Large band gaps of water waves through two-dimensional periodic topography

International Nuclear Information System (INIS)

Yang Shaohua; Wu Fugen; Zhong Huilin; Zhong Lanhua

2006-01-01

In this Letter, the band structures and band gaps of liquid surface waves propagating over two-dimensional periodic topography was investigated by plane-waves expansion method. The periodic topography drilled by square hollows with square lattice was considered. And the effects of the filling fraction and the orientation of bottom-hollows on the band gaps are investigated in detail

Phononic Band Gaps in 2D Quadratic and 3D Cubic Cellular Structures.

Science.gov (United States)

Warmuth, Franziska; Körner, Carolin

2015-12-02

The static and dynamic mechanical behaviour of cellular materials can be designed by the architecture of the underlying unit cell. In this paper, the phononic band structure of 2D and 3D cellular structures is investigated. It is shown how the geometry of the unit cell influences the band structure and eventually leads to full band gaps. The mechanism leading to full band gaps is elucidated. Based on this knowledge, a 3D cellular structure with a broad full band gap is identified. Furthermore, the dependence of the width of the gap on the geometry parameters of the unit cell is presented.

Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

DEFF Research Database (Denmark)

Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

2017-01-01

We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... are consistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit...... voltage measurements on Cu2ZnSnS4 solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of...

Complete flexural vibration band gaps in membrane-like lattice structures

International Nuclear Information System (INIS)

Yu Dianlong; Liu Yaozong; Qiu Jing; Wang Gang; Zhao Honggang

2006-01-01

The propagation of flexural vibration in the periodical membrane-like lattice structure is studied. The band structure calculated with the plane wave expansion method indicates the existence of complete gaps. The frequency response function of a finite periodic structure is simulated with finite element method. Frequency ranges with vibration attenuation are in good agreement with the gaps found in the band structure. Much larger attenuations are found in the complete gaps comparing to those directional ones. The existence of complete flexural vibration gaps in such a lattice structure provides a new idea for vibration control of thin plates

Tunable band gaps in bio-inspired periodic composites with nacre-like microstructure

Science.gov (United States)

Chen, Yanyu; Wang, Lifeng

2014-08-01

Periodic composite materials have many promising applications due to their unique ability to control the propagation of waves. Here, we report the existence and frequency tunability of complete elastic wave band gaps in bio-inspired periodic composites with nacre-like, brick-and-mortar microstructure. Numerical results show that complete band gaps in these periodic composites derive from local resonances or Bragg scattering, depending on the lattice angle and the volume fraction of each phase in the composites. The investigation of elastic wave propagation in finite periodic composites validates the simulated complete band gaps and further reveals the mechanisms leading to complete band gaps. Moreover, our results indicate that the topological arrangement of the mineral platelets and changes of material properties can be utilized to tune the evolution of complete band gaps. Our finding provides new opportunities to design mechanically robust periodic composite materials for wave absorption under hostile environments, such as for deep water applications.

Charge separation dynamics in a narrow band gap polymer-PbS nanocrystal blend for efficient hybrid solar cells

OpenAIRE

Piliego, Claudia; Manca, Marianna; Kroon, Renee; Yarema, Maksym; Szendrei, Krisztina; Andersson, Mats R.; Heiss, Wolfgang; Loi, Maria A.

2012-01-01

We have demonstrated efficient hybrid solar cells based on lead sulfide (PbS) nanocrystals and a narrow band gap polymer, poly[{2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl}-alt-{[2,2'-(1,4-phenylene)bis-thiophene]-5,5'-diyl}], (PDPPTPT). An opportune mixing of the two materials led to the formation of an energetically favorable bulk hetero-junction with a broad spectral response. Using a basic device structure, we reached a power conversion efficiency of s...

Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

International Nuclear Information System (INIS)

Takeda, Hiroyuki; Yoshino, Katsumi

2004-01-01

We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

A new method for compensation of the effect of charging transformer's leakage inductance on PFN voltage regulation in Klystron pulse modulators

Energy Technology Data Exchange (ETDEWEB)

Patel, Akhil, E-mail: akhilpatel@rrcat.gov.in; Kale, Umesh; Shrivastava, Purushottam

2017-04-21

The Line type modulators have been widely used to generate high voltage rectangular pulses to power the klystron for high power RF generation. In Line type modulator, the Pulse Forming Network (PFN) which is a cascade combination of lumped capacitors and inductors is used to store the electrical energy. The charged PFN is then discharged into a klystron by firing a high voltage Thyratron switch. This discharge generates a high voltage rectangular pulse across the klystron electrodes. The amplitude and phase of Klystron's RF output is governed by the high voltage pulse amplitude. The undesired RF amplitude and phase stability issues arises at the klystron's output due to inter-pulse and during the pulse amplitude variations. To reduce inter-pulse voltage variations, the PFN is required to be charged at the same voltage after every discharge cycle. At present, the combination of widely used resonant charging and deQing method is used to regulate the pulse to pulse PFN voltage variations but the charging transformer's leakage inductance puts an upper bound on the regulation achievable by this method. Here we have developed few insights of the deQing process and devised a new compensation method to compensate this undesired effect of charging transformer's leakage inductance on the pulse to pulse PFN voltage stability. This compensation is accomplished by the controlled partial discharging of the split PFN capacitor using a low voltage MOSFET switch. Theoretically, very high values of pulse to pulse voltage stability may be achieved using this method. This method may be used in deQing based existing modulators or in new modulators, to increase the pulse to pulse voltage stability, without having a very tight bound on charging transformer's leakage inductance. Given a stable charging power supply, this method may be used to further enhance the inter-pulse voltage stability of modulators which employ the direct charging, after replacing the

The band gap variation of a two dimensional binary locally resonant structure in thermal environment

Directory of Open Access Journals (Sweden)

Zhen Li

2017-01-01

Full Text Available In this study, the numerical investigation of thermal effect on band gap dynamical characteristic for a two-dimensional binary structure composed of aluminum plate periodically filled with nitrile rubber cylinder is presented. Initially, the band gap of the binary structure variation trend with increasing temperature is studied by taking the softening effect of thermal stress into account. A breakthrough is made which found the band gap being narrower and shifting to lower frequency in thermal environment. The complete band gap which in higher frequency is more sensitive to temperature that it disappears with temperature increasing. Then some new transformed models are created by changing the height of nitrile rubber cylinder from 1mm to 7mm. Simulations show that transformed model can produce a wider band gap (either flexure or complete band gap. A proper forbidden gap of elastic wave can be utilized in thermal environment although both flexure and complete band gaps become narrower with temperature. Besides that, there is a zero-frequency flat band appearing in the first flexure band, and it becomes broader with temperature increasing. The band gap width decreases trend in thermal environment, as well as the wider band gap induced by the transformed model with higher nitrile rubber cylinder is useful for the design and application of phononic crystal structures in thermal environment.

Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

KAUST Repository

Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, Dalaver H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

2013-01-01

Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

KAUST Repository

Waterhouse, G. I. N.

2013-10-10

Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

Performance of a high efficiency high power UHF klystron

International Nuclear Information System (INIS)

Konrad, G.T.

1977-03-01

A 500 kW c-w klystron was designed for the PEP storage ring at SLAC. The tube operates at 353.2 MHz, 62 kV, a microperveance of 0.75, and a gain of approximately 50 dB. Stable operation is required for a VSWR as high as 2 : 1 at any phase angle. The design efficiency is 70%. To obtain this value of efficiency, a second harmonic cavity is used in order to produce a very tightly bunched beam in the output gap. At the present time it is planned to install 12 such klystrons in PEP. A tube with a reduced size collector was operated at 4% duty at 500 kW. An efficiency of 63% was observed. The same tube was operated up to 200 kW c-w for PEP accelerator cavity tests. A full-scale c-w tube reached 500 kW at 65 kV with an efficiency of 55%. In addition to power and phase measurements into a matched load, some data at various load mismatches are presented

Calculation of the band gap energy of ionic crystals

International Nuclear Information System (INIS)

Aguado, A.; Lopez, J.M.; Alonso, J.A.; Ayuela, A.; Rivas S, J.F.; Berrondo, M.

1998-01-01

The band gap of alkali halides, alkaline-earth oxides, Al 2 O 3 and SiO 2 crystals has been calculated using the perturbed-ion model supplemented with some assumptions for the treatment of excited states. The gap is calculated in several ways: as a difference between one-electron energy eigenvalues and as a difference between the total energies of appropriate electronic states of the crystal, both at the HF level and with inclusion of Coulomb correlation effects. The results compare well with experimental band gap energies and with other theoretical calculations, suggesting that the picture of bonding and excitation given by the model can be useful in ionic materials. (Author)

Magnonic band gaps in two-dimension magnonic crystals with diffuse interfaces

International Nuclear Information System (INIS)

Wang, Qi; Zhang, Huaiwu; Ma, Guokun; Tang, Xiaoli; Liao, Yulong; Zhong, Zhiyong

2014-01-01

In this paper, the plane wave method is extended to include the diffuse interface in the calculation of the dispersion of spin waves in two-dimension magnonic crystals. The diffuse interfaces with linear and sinusoidal profiles of variation in the spontaneous magnetization and exchange constant are considered and the effects of the thicknesses and profiles of diffuse interfaces on the magnonic band gaps are investigated. The results show that the thicknesses and profiles of diffuse interfaces are clearly seen to play a significant role in determining the size and position of the magnonic band gaps in the both square and triangular lattices in the exchange interaction regime. The smooth (linear or sinusoidal) interface does not lead to disappearance of the band gaps, instead it may lead to larger band gaps than those in the model with sharp (infinitely thin) diffuse interface under certain conditions

Testing and Implementation Progress on the Advanced Photon Source (APS) Linear Accelerator (Linac) High-Power S-band Switching System

OpenAIRE

Grelick, A. E.; Arnold, N.; Berg, S.; Dohan, D.; Goeppner, G.; Kang, Y. W.; Nassiri, A.; Pasky, S.; Pile, G.; Smith, T.; Stein, S. J.

2000-01-01

An S-band linear accelerator is the source of particles and the front end of the Advanced Photon Source injector. In addition, it supports a low-energy undulator test line (LEUTL) and drives a free-electron laser (FEL). A waveguide-switching and distribution system is now under construction. The system configuration was revised to be consistent with the recent change to electron-only operation. There are now six modulator-klystron subsystems, two of which are being configured to act as hot sp...

Relativistic klystron research for high gradient accelerators

International Nuclear Information System (INIS)

Allen, M.A.; Callin, R.S.; Deruyter, H.

1988-06-01

Relativistic klystrons are being developed as a power source for high gradient accelerator applications which include large linear electron--positron colliders, compact accelerators, and FEL sources. We have attained 200MW peak power at 11.4 GHz from a relativistic klystron, and 140 MV/m longitudinal gradient in a short 11.4 GHz accelerator section. We report here on the design of our first klystrons, the results of our experiments so far, and some of our plans for the near future. 5 refs., 7 figs

Tuning of band gap due to fluorination of graphyne and graphdiyne

International Nuclear Information System (INIS)

Bhattacharya, B; Singh, N B; Sarkar, U

2014-01-01

The electronic properties of graphyne and graphdiyne consisting of sp and sp 2 hybridized carbon atom have been investigated within the density functional theory (DFT) method. The corresponding changes in the electronic properties due to systematic functionalization by fluorine at different possible sites are reported. Our band structure calculations clearly infer that all fluorographyne are wide band gap semiconductor and the band gap can be tuned by fluorination and the possibility of modulating the band gap provides flexibility for its use in nanoelectronic devices. Projected density of state (PDOS) analysis provides the clear idea about the bonding nature of these novel materials in details and Crystal Orbital Hamilton Population (-COHP) analysis shed insight on the orbital participating in bonding and antibonding

Design of a New Water Load for S-band 750 kW Continuous Wave High Power Klystron Used in EAST Tokamak

Science.gov (United States)

Liu, Liang; Liu, Fukun; Shan, Jiafang; Kuang, Guangli

2007-04-01

In order to test the klystrons operated at a frequency of 3.7 GHz in a continuous wave (CW) mode, a type of water load to absorb its power up to 750 kW is presented. The distilled water sealed with an RF ceramic window is used as the absorbent. At a frequency range of 70 MHz, the VSWR (Voltage Standing Wave Ratio) is below 1.2, and the rise in temperature of water is about 30 oC at the highest power level.

Optimization,Modeling, and Control: Applications to Klystron Designing and Hepatitis C Virus Dynamics

Science.gov (United States)

Lankford, George Bernard

In this dissertation, we address applying mathematical and numerical techniques in the fields of high energy physics and biomedical sciences. The first portion of this thesis presents a method for optimizing the design of klystron circuits. A klystron is an electron beam tube lined with cavities that emit resonant frequencies to velocity modulate electrons that pass through the tube. Radio frequencies (RF) inserted in the klystron are amplified due to the velocity modulation of the electrons. The routine described in this work automates the selection of cavity positions, resonant frequencies, quality factors, and other circuit parameters to maximize the efficiency with required gain. The method is based on deterministic sampling methods. We will describe the procedure and give several examples for both narrow and wide band klystrons, using the klystron codes AJDISK (Java) and TESLA (Python). The rest of the dissertation is dedicated to developing, calibrating and using a mathematical model for hepatitis C dynamics with triple drug combination therapy. Groundbreaking new drugs, called direct acting antivirals, have been introduced recently to fight off chronic hepatitis C virus infection. The model we introduce is for hepatitis C dynamics treated with the direct acting antiviral drug, telaprevir, along with traditional interferon and ribavirin treatments to understand how this therapy affects the viral load of patients exhibiting different types of response. We use sensitivity and identifiability techniques to determine which parameters can be best estimated from viral load data. We use these estimations to give patient-specific fits of the model to partial viral response, end-of-treatment response, and breakthrough patients. We will then revise the model to incorporate an immune response dynamic to more accurately describe the dynamics. Finally, we will implement a suboptimal control to acquire a drug treatment regimen that will alleviate the systemic cost

Electronic materials with a wide band gap: recent developments

Directory of Open Access Journals (Sweden)

Detlef Klimm

2014-09-01

Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.

Hollow-core photonic band gap fibers for particle acceleration

Directory of Open Access Journals (Sweden)

Robert J. Noble

2011-12-01

Full Text Available Photonic band gap (PBG dielectric fibers with hollow cores are being studied both theoretically and experimentally for use as laser driven accelerator structures. The hollow core functions as both a longitudinal waveguide for the transverse-magnetic (TM accelerating fields and a channel for the charged particles. The dielectric surrounding the core is permeated by a periodic array of smaller holes to confine the mode, forming a photonic crystal fiber in which modes exist in frequency passbands, separated by band gaps. The hollow core acts as a defect which breaks the crystal symmetry, and so-called defect, or trapped modes having frequencies in the band gap will only propagate near the defect. We describe the design of 2D hollow-core PBG fibers to support TM defect modes with high longitudinal fields and high characteristic impedance. Using as-built dimensions of industrially made fibers, we perform a simulation analysis of prototype PBG fibers with dimensions appropriate for speed-of-light TM modes.

Metallic photonic band-gap materials

International Nuclear Information System (INIS)

Sigalas, M.M.; Chan, C.T.; Ho, K.M.; Soukoulis, C.M.

1995-01-01

We calculate the transmission and absorption of electromagnetic waves propagating in two-dimensional (2D) and 3D periodic metallic photonic band-gap (PBG) structures. For 2D systems, there is substantial difference between the s- and p-polarized waves. The p-polarized waves exhibit behavior similar to the dielectric PBG's. But, the s-polarized waves have a cutoff frequency below which there are no propagating modes. For 3D systems, the results are qualitatively the same for both polarizations but there are important differences related to the topology of the structure. For 3D structures with isolated metallic scatterers (cermet topology), the behavior is similar to that of the dielectric PBG's, while for 3D structures with the metal forming a continuous network (network topology), there is a cutoff frequency below which there are no propagating modes. The systems with the network topology may have some interesting applications for frequencies less than about 1 THz where the absorption can be neglected. We also study the role of the defects in the metallic structures

Robust band gap and half-metallicity in graphene with triangular perforations

Science.gov (United States)

Gregersen, Søren Schou; Power, Stephen R.; Jauho, Antti-Pekka

2016-06-01

Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG≃500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.

Design of the klystron filament power supply control system for EAST LHCD

Energy Technology Data Exchange (ETDEWEB)

Wu, Zege; Wang, Mao; Hu, Huaichuan; Ma, Wendong; Zhou, Taian; Zhou, Faxin; Liu, Fukun; Shan, Jiafang [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2016-09-15

A filament is a critical component of the klystron used to heat the cathode. There are totally 44 klystrons in experimental advanced superconducting tokamak (EAST) lower hybrid current drive (LHCD) systems. All klystron filaments are powered by AC power suppliers through isolated transformers. In order to achieve better klystron preheat, a klystron filament power supply control system is designed to obtain the automatic control of all filament power suppliers. Klystron filament current is measured by PLC and the interlock between filament current and klystron high voltage system is also implemented. This design has already been deployed in two LHCD systems and proves feasible completely.

An X-band high-impedance relativistic klystron amplifier with an annular explosive cathode

Energy Technology Data Exchange (ETDEWEB)

Zhu, Danni; Zhang, Jun, E-mail: zhangjun@nudt.edu.cn; Zhong, Huihuang; Qi, Zumin [College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2015-11-15

The feasibility of employing an annular beam instead of a solid one in the X-band high-impedance relativistic klystron amplifier (RKA) is investigated in theory and simulation. Small-signal theory analysis indicates that the optimum bunching distance, fundamental current modulation depth, beam-coupling coefficient, and beam-loaded quality factor of annular beams are all larger than the corresponding parameters of solid beams at the same beam voltage and current. An annular beam RKA and a solid beam RKA with almost the same geometric parameters are compared in particle-in-cell simulation. Output microwave power of 100 MW, gain of 50 dB, and power conversion efficiency of 42% are obtained in an annular beam RKA. The annular beam needs a 15% lower uniform guiding magnetic field than the solid beam. Our investigations demonstrate that we are able to use a simple annular explosive cathode immersed in a lower uniform magnetic field instead of a solid thermionic cathode in a complicated partially shielding magnetic field for designing high-impedance RKA, which avoids high temperature requirement, complicated electron-optical system, large area convergence, high current density, and emission uniformity for the solid beam. An equivalent method for the annular beam and the solid beam on bunching features is proposed and agrees with the simulation. The annular beam has the primary advantages over the solid beam that it can employ the immersing uniform magnetic field avoiding the complicated shielding magnetic field system and needs a lower optimum guiding field due to the smaller space charge effect.

Relativistic band gaps in one-dimensional disordered systems

International Nuclear Information System (INIS)

Clerk, G.J.; McKellar, B.H.J.

1992-01-01

Conditions for the existence of band gaps in a one-dimensional disordered array of δ-function potentials possessing short range order are developed in a relativistic framework. Both Lorentz vector and scalar type potentials are treated. The relationship between the energy gaps and the transmission properties of the array are also discussed. 20 refs., 2 figs

Band-gap creation by icosahedral symmetry in nearly-free-electron materials

International Nuclear Information System (INIS)

Carlsson, A.E.

1993-01-01

A series of numerical electronic density-of-states calculations is performed for rational approximants to a model one-electron potential based on icosahedrally arranged plane-wave components. It is found that high-order approximants can have band gaps even if the low-order approximants do not; furthermore, the magnitude of the gap increases with the order of the approximant. The results are interpreted via a two- and three-wave analysis of the energy eigenvalues at the pseudo-Jones-zone faces and edges. It is also found that the mechanism of band-gap reduction in the rational approximants is the presence of a small density of gap states. An analytic calculation shows that these gap states result from a splitting of threefold and pseudothreefold states at the valence-band edge when the icosahedral symmetry is broken. The splitting is proportional to the error with which the ratio between the approximant indices approximates τ, the golden mean. Finally, an application to the AlCuLi system is presented

Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

International Nuclear Information System (INIS)

Qi, Jingshan; Li, Xiao; Qian, Xiaofeng

2016-01-01

Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z_2 invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route to manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.

Effects of quantum confinement and shape on band gap of core/shell quantum dots and nanowires

Science.gov (United States)

Gao, Faming

2011-05-01

A quantum confinement model for nanocrystals developed is extended to study for the optical gap shifts in core/shell quantum dots and nanowires. The chemical bond properties and gap shifts in the InP/ZnS, CdSe/CdS, CdSe/ZnS, and CdTe/ZnS core/shell quantum dots are calculated in detail. The calculated band gaps are in excellent agreement with experimental values. The effects of structural taping and twinning on quantum confinement of InP and Si nanowires are elucidated. It is found theoretically that a competition between the positive Kubo energy-gap shift and the negative surface energy shift plays the crucial role in the optical gaps of these nanosystems.

Wave propagation in ordered, disordered, and nonlinear photonic band gap materials

Energy Technology Data Exchange (ETDEWEB)

Lidorikis, Elefterios [Iowa State Univ., Ames, IA (United States)

1999-12-10

Photonic band gap materials are artificial dielectric structures that give the promise of molding and controlling the flow of optical light the same way semiconductors mold and control the electric current flow. In this dissertation the author studied two areas of photonic band gap materials. The first area is focused on the properties of one-dimensional PBG materials doped with Kerr-type nonlinear material, while, the second area is focused on the mechanisms responsible for the gap formation as well as other properties of two-dimensional PBG materials. He first studied, in Chapter 2, the general adequacy of an approximate structure model in which the nonlinearity is assumed to be concentrated in equally-spaced very thin layers, or 6-functions, while the rest of the space is linear. This model had been used before, but its range of validity and the physical reasons for its limitations were not quite clear yet. He performed an extensive examination of many aspects of the model's nonlinear response and comparison against more realistic models with finite-width nonlinear layers, and found that the d-function model is quite adequate, capturing the essential features in the transmission characteristics. The author found one exception, coming from the deficiency of processing a rigid bottom band edge, i.e. the upper edge of the gaps is always independent of the refraction index contrast. This causes the model to miss-predict that there are no soliton solutions for a positive Kerr-coefficient, something known to be untrue.

Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices.

Science.gov (United States)

Monastyrskii, Liubomyr S; Sokolovskii, Bogdan S; Alekseichyk, Mariya P

2017-12-01

The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.

Robust band gap and half-metallicity in graphene with triangular perforations

DEFF Research Database (Denmark)

Gregersen, Søren Schou; Power, Stephen; Jauho, Antti-Pekka

2016-01-01

Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG ≅ 500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic...... disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag......-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder...

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.

2016-07-25

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.; Greil, J.; Zardo, I.; Belabbes, Abderrezak; de Moor, M. W. A.; Koelling, S.; Koenraad, P. M.; Bechstedt, F.; Bakkers, E. P. A. M.; Haverkort, J. E. M.

2016-01-01

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors

National Research Council Canada - National Science Library

Hommerich, Uwe

1999-01-01

...+) PL intensity under below gap excitation. Photoluminescence excitation (PLE) studies revealed that oxygen/carbon introduces a broad below gap PLE band, which provides an efficient pathway for E(3+) excitation...

Conduction bands and invariant energy gaps in alkali bromides

NARCIS (Netherlands)

Boer, P.K. de; Groot, R.A. de

1998-01-01

Electronic structure calculations of the alkali bromides LiBr, NaBr, KBr, RbBr and CsBr are reported. It is shown that the conduction band has primarily bromine character. The size of the band gaps of bromides and alkali halides in general is reinterpreted.

Maximizing the Optical Band Gap in 2D Photonic Crystals

DEFF Research Database (Denmark)

Hougaard, Kristian G.; Sigmund, Ole

Topology optimization is used to find the 2D photonic crystal designs with the largest relative photonic band gaps. Starting points for the topology optimization are found with an exhaustive binary search on a low resolution grid.......Topology optimization is used to find the 2D photonic crystal designs with the largest relative photonic band gaps. Starting points for the topology optimization are found with an exhaustive binary search on a low resolution grid....

Band Gap Properties of Magnetoelectroelastic Grid Structures with Initial Stress

International Nuclear Information System (INIS)

Wang Yi-Ze; Li Feng-Ming

2012-01-01

The propagation of elastic waves in magnetoelectroelastic grid structures is studied. Band gap properties are presented and the effects of the magnetoelectroelastic coupling and initial stress are considered. Numerical calculations are performed using the plane-wave expansion method. The results show that the band gap width can be tuned by the initial stress. It is hoped that our results will be helpful for designing acoustic filters with magnetoelectroelastic materials and grid structures

Bose-Einstein condensates in optical lattices: Band-gap structure and solitons

International Nuclear Information System (INIS)

Louis, Pearl J. Y.; Kivshar, Yuri S.; Ostrovskaya, Elena A.; Savage, Craig M.

2003-01-01

We analyze the existence and stability of spatially extended (Bloch-type) and localized states of a Bose-Einstein condensate loaded into an optical lattice. In the framework of the Gross-Pitaevskii equation with a periodic potential, we study the band-gap structure of the matter-wave spectrum in both the linear and nonlinear regimes. We demonstrate the existence of families of spatially localized matter-wave gap solitons, and analyze their stability in different band gaps, for both repulsive and attractive atomic interactions

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China); Li, Z. H.; Zhang, Y. J.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

2013-11-15

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Science.gov (United States)

Wu, Y.; Xie, H. Q.; Li, Z. H.; Zhang, Y. J.; Ma, Q. S.

2013-11-01

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

The dynamics of a photonic band gap in 2D Si-based photonic crystals

International Nuclear Information System (INIS)

Glushko, O.Je.; Karachevtseva, L.A.

2006-01-01

The theoretical investigations of the photonic band structure of two-dimensional photonic crystals for the off-plane propagation of electromagnetic waves and the influence of a surface layer on the position and width of photonic band gaps are carried out. The experimentally measured width of a photonic band gap and the dispersion for two-dimensional silicon structures at the off-plane propagation of an electromagnetic wave correlate with the theoretical band gap position and width

Optical band gaps of organic semiconductor materials

Science.gov (United States)

Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

2016-08-01

UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

Reliability and lifetime predictions of SLC klystrons

International Nuclear Information System (INIS)

Allen, M.A.; Callin, R.S.; Fowkes, W.R.; Lee, T.G.; Vlieks, A.E.

1989-01-01

The energy upgrade of SLAC, with the first of the new 67 MW SLAC Linear Collider (SLC) klystrons, began over four years ago. Today there are over 200 of these klystrons in operation. As a result, there is a wealth of klystron performance and failure information that enables reasonable predictions to be made on life expectancy and reliability. Data from initial tests, follow-up tests and daily operation monitoring on the accelerator is stored for analysis. Presented here are life expectancy predictions with particular emphasis on cathode life. Also, based on this data, the authors will discuss some of the principal modes of failure. 3 refs., 2 figs., 1 tab

Reliability and lifetime predictions of SLC klystrons

International Nuclear Information System (INIS)

Allen, M.A.; Callin, R.S.; Fowkes, W.R.; Lee, T.G.; Vlieks, A.E.

1989-03-01

The energy upgrade of SLAC, with the first of the new 67 MW SLAC Linear Collider (SLC) klystrons, began over four years ago. Today there are over 200 of these klystrons in operation. As a result, there is a wealth klystron performance and failure information that enables reasonable predictions to be made on life expectancy and reliability. Data from initial tests, follow-up tests and daily operation monitoring on the accelerator is stores for analysis. Presented here are life expectancy predictions with particular emphasis on cathode life. Also, based on this data, we will discuss some of the principal modes of failure. 3 refs., 2 figs

Fabrication of 3-D Photonic Band Gap Crystals Via Colloidal Self-Assembly

Science.gov (United States)

Subramaniam, Girija; Blank, Shannon

2005-01-01

The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.

The long-term performance of the S-band klystron modulator system in the CERN LEP pre-injector

CERN Document Server

McMonagle, G; Rossat, G

2000-01-01

The Large Electron-Positron collider (LEP) is the final machine in a chain of four accelerators that are used to create particle collisions for high-energy physics experiments. LEP collides bunches of electrons (e/sup -/) with bunches of positrons (e/sup +/) that have originated in the LEP Injector Linac (LIL). These particles travel around the 27 km circumference of the LEP ring in opposite directions at velocities close to the speed of light. When bunches of particles collide, bursts of very high energy are created during a tiny fraction of a second, emulating the state of the early Universe. Four huge detector assemblies record the tracks of particles created in this way, and provide the physicists with a means of looking at the behaviour of matter at these high energies. LIL is at the front end of this chain and is used to produce the sequence of e/sup -/ and e/sup +/ beam pulses that are accumulated in 4 or 8 bunches, at a 100 Hz rate, in the Electron Positron Accumulator (EPA). The klystron- modulators,...

New high power CW klystrons at TED

CERN Document Server

Beunas, A; Marchesin, R

2003-01-01

Thales Electron Devices (TED) has been awarded a contract by CERN to develop and produce 20 units of the klystrons needed to feed the Large Hadrons Collider (LHC). Each of these delivers 300 kW of CW RF power at 400 MHz. Three klystrons have been delivered to CERN up to now.

Kronig-Penney-like description for band gap variation in SiC polytypes

NARCIS (Netherlands)

Backes, W.H.; Nooij, de F.C.; Bobbert, P.A.; van Haeringen, W.

1996-01-01

A one-dimensional Kronig-Penney-like model for envelope wave functions is presented to explain the band gap variation of SiC polytypes. In this model the envelope functions obey discontinuous boundary conditions. The electronic band gaps of cubic and several hexagonal and rhombohedral SiC polytypes

Band gap engineering of N-alloyed Ga2O3 thin films

Directory of Open Access Journals (Sweden)

Dongyu Song

2016-06-01

Full Text Available The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.

Research on the Band Gap Characteristics of Two-Dimensional Phononic Crystals Microcavity with Local Resonant Structure

Directory of Open Access Journals (Sweden)

Mao Liu

2015-01-01

Full Text Available A new two-dimensional locally resonant phononic crystal with microcavity structure is proposed. The acoustic wave band gap characteristics of this new structure are studied using finite element method. At the same time, the corresponding displacement eigenmodes of the band edges of the lowest band gap and the transmission spectrum are calculated. The results proved that phononic crystals with microcavity structure exhibited complete band gaps in low-frequency range. The eigenfrequency of the lower edge of the first gap is lower than no microcavity structure. However, for no microcavity structure type of quadrilateral phononic crystal plate, the second band gap disappeared and the frequency range of the first band gap is relatively narrow. The main reason for appearing low-frequency band gaps is that the proposed phononic crystal introduced the local resonant microcavity structure. This study provides a good support for engineering application such as low-frequency vibration attenuation and noise control.

Tunable band gaps in graphene/GaN van der Waals heterostructures

International Nuclear Information System (INIS)

Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

2014-01-01

Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

Robust indirect band gap and anisotropy of optical absorption in B-doped phosphorene.

Science.gov (United States)

Wu, Zhi-Feng; Gao, Peng-Fei; Guo, Lei; Kang, Jun; Fang, Dang-Qi; Zhang, Yang; Xia, Ming-Gang; Zhang, Sheng-Li; Wen, Yu-Hua

2017-12-06

A traditional doping technique plays an important role in the band structure engineering of two-dimensional nanostructures. Since electron interaction is changed by doping, the optical and electrochemical properties could also be significantly tuned. In this study, density functional theory calculations have been employed to explore the structural stability, and electronic and optical properties of B-doped phosphorene. The results show that all B-doped phosphorenes are stable with a relatively low binding energy. Of particular interest is that these B-doped systems exhibit an indirect band gap, which is distinct from the direct one of pure phosphorene. Despite the different concentrations and configurations of B dopants, such indirect band gaps are robust. The screened hybrid density functional HSE06 predicts that the band gap of B-doped phosphorene is slightly smaller than that of pure phosphorene. Spatial charge distributions at the valence band maximum (VBM) and the conduction band minimum (CBM) are analyzed to understand the features of an indirect band gap. By comparison with pure phosphorene, B-doped phosphorenes exhibit strong anisotropy and intensity of optical absorption. Moreover, B dopants could enhance the stability of Li adsorption on phosphorene with less sacrifice of the Li diffusion rate. Our results suggest that B-doping is an effective way of tuning the band gap, enhancing the intensity of optical absorption and improving the performances of Li adsorption, which could promote potential applications in novel optical devices and lithium-ion batteries.

Temperature dependence of the fundamental band gap parameters ...

Indian Academy of Sciences (India)

the energy and broadening of the fundamental band gap have been evaluated using various models including the ... other crucial parameters including the operating temperatures of these devices. ... refrigeration system (Air Product Displex).

Tuning characteristic of band gap and waveguide in a multi-stub locally resonant phononic crystal plate

Directory of Open Access Journals (Sweden)

Xiao-Peng Wang

2015-10-01

Full Text Available In this paper, the tuning characteristics of band gaps and waveguides in a locally resonant phononic crystal structure, consisting of multiple square stubs deposited on a thin homogeneous plate, are investigated. Using the finite element method and supercell technique, the dispersion relationships and power transmission spectra of those structures are calculated. In contrast to a system of one square stub, systems of multiple square stubs show wide band gaps at lower frequencies and an increased quantity of band gaps at higher frequencies. The vibration modes of the band gap edges are analyzed to clarify the mechanism of the generation of the lowest band gap. Additionally, the influence of the stubs arrangement on the band gaps in multi-stub systems is investigated. The arrangements of the stubs were found to influence the band gaps; this is critical to understand for practical applications. Based on this finding, a novel method to form defect scatterers by changing the arrangement of square stubs in a multi-stub perfect phononic crystal plate was developed. Defect bands can be induced by creating defects inside the original complete band gaps. The frequency can then be tuned by changing the defect scatterers’ stub arrangement. These results will help in fabricating devices such as acoustic filters and waveguides whose band frequency can be modulated.

Development of a protection system for high power klystrons in EAST

International Nuclear Information System (INIS)

Feng Jianqiang; Shan Jiafang; Yang Yong; Wang Mao; Wang Dongxia

2010-01-01

The energy dissipated on the electrodes of a klystron can be estimated from maximal breakdown current, value of the arc discharge voltage and time of turning off the power supply. It mainly introduces the design of over-current protection of Klystrons for 2.45 G/2 MW LHCD System on EAST. Circuits triggering by an over-current and ignitrons are adopted to protect klystrons. Experiment results prove that the system can protect klystrons efficiently. (authors)

Phononic band gap structures as optimal designs

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Sigmund, Ole

2003-01-01

In this paper we use topology optimization to design phononic band gap structures. We consider 2D structures subjected to periodic loading and obtain the distribution of two materials with high contrast in material properties that gives the minimal vibrational response of the structure. Both in...

Effect of Sn on the optical band gap determined using absorption spectrum fitting method

Energy Technology Data Exchange (ETDEWEB)

Heera, Pawan, E-mail: sramanb70@mailcity.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Govt. College Amb, Himachal Pradesh, INDIA,177203 (India); Kumar, Anup, E-mail: kumar.anup.sml@gmail.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Physics Department, Govt. College, Kullu, H. P., INDIA, 175101 (India); Sharma, Raman, E-mail: pawanheera@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India)

2015-05-15

We report the preparation and the optical studies on tellurium rich glasses thin films. The thin films of Se{sub 30}Te{sub 70-x} Sn{sub x} system for x= 0, 1.5, 2.5 and 4.5 glassy alloys prepared by melt quenching technique are deposited on the glass substrate using vacuum thermal evaporation technique. The analysis of absorption spectra in the spectral range 400nm–4000 nm at room temperature obtained from UV-VIS-NIR spectrophotometer [Perkin Elmer Lamda-750] helps us in the optical characterization of the thin films under study. The absorption spectrum fitting method is applied by using the Tauc’s model for estimating the optical band gap and the width of the band tail of the thin films. The optical band gap is calculated and is found to decrease with the Sn content.

Design of nanostrip magnonic crystal waveguides with a single magnonic band gap

International Nuclear Information System (INIS)

Wang, Qi; Zhong, Zhiyong; Jin, Lichuan; Tang, Xiaoli; Bai, Feiming; Zhang, Huaiwu; Beach, Geoffrey S.D.

2013-01-01

A novel planar structure of magnonic-crystal waveguide (MCW) with periodic rectangular-shaped holes embedded in a magnetic nanostrip film was designed. The effects of the distance between rectangular-shaped holes in the width direction of MCW on magnonic band structures were studied by micromagnetic simulations. The results show that a MCW with a single magnonic band gap can be obtained by adjusting the distance to meet the condition of Bragg reflection of spin waves in the width direction of MCW. Moreover, the center frequency and width of magnonic gap can be regulated by changing the period and length of rectangular-shaped holes. - Highlights: • Design a novel planar structure of magnonic-crystal waveguide. • The physical origin of a single magnonic band gap. • Study of the center frequency and width of magnonic gap

Cation substitution induced blue-shift of optical band gap

Indian Academy of Sciences (India)

Cation substitution induced blue-shift of optical band gap in nanocrystalline Zn ( 1 − x ) Ca x O thin films deposited by sol–gel dip coating technique ... thin films giving 13.03% enhancement in theenergy gap value due to the electronic perturbation caused by cation substitution as well as deterioration in crystallinity.

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

Energy Technology Data Exchange (ETDEWEB)

Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin [Industrial Technology Research Institute-South, Tainan 709, Taiwan (China); Hsu, Jin-Chen, E-mail: fengchiahsu@itri.org.t, E-mail: hsujc@yuntech.edu.t [Department of Mechanical Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan (China)

2011-09-21

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

International Nuclear Information System (INIS)

Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin; Hsu, Jin-Chen

2011-01-01

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

Passive band-gap reconfiguration born from bifurcation asymmetry.

Science.gov (United States)

Bernard, Brian P; Mann, Brian P

2013-11-01

Current periodic structures are constrained to have fixed energy transmission behavior unless active control or component replacement is used to alter their wave propagation characteristics. The introduction of nonlinearity to generate multiple stable equilibria is an alternative strategy for realizing distinct energy propagation behaviors. We investigate the creation of a reconfigurable band-gap system by implementing passive switching between multiple stable states of equilibrium, to alter the level of energy attenuation in response to environmental stimuli. The ability to avoid potentially catastrophic loads is demonstrated by tailoring the bandpass and band-gap regions to coalesce for two stable equilibria and varying an external load parameter to trigger a bifurcation. The proposed phenomenon could be utilized in remote or autonomous applications where component modifications and active control are impractical.

Stop Band Gap in Periodic Layers of Confined Atomic Vapor/Dielectric Medium

International Nuclear Information System (INIS)

Li Yuan-Yuan; Li Li; Lu Yi-Xin; Zhang Yan-Peng; Xu Ke-Wei

2013-01-01

A stop band gap is predicted in periodic layers of a confined atomic vapor/dielectric medium. Reflection and transmission profile of the layers over the band gap can be dramatically modified by the confined atoms and the number of layer periods. These gap and line features can be ascribed to the enhanced contribution of slow atoms induced by atom-wall collision, transient behavior of atom-light interaction and Fabry—Pérot effects in a thermal confined atomic system

Negative refractions by triangular lattice sonic crystals in partial band gaps

International Nuclear Information System (INIS)

Alagoz, S.; Sahin, A.; Alagoz, B. B.; Nur, S.

2015-01-01

This study numerically demonstrates the effects of partial band gaps on the negative refraction properties of sonic crystal. The partial band gap appearing at the second band edge leads to the efficient transmissions of scattered wave envelopes in the transverse directions inside triangular lattice sonic crystal, and therefore enhances the refraction property of sonic crystal. Numerical simulation results indicate a diagonal guidance of coupled scattered wave envelopes inside crystal structure at the partial band gap frequencies and then output waves are restored in the vicinity of the output interface of sonic crystal by combining phase coherent scattered waves according to Huygens’ principles. This mechanism leads to two operations for wavefront engineering: one is spatial wavefront shifting operation and the other is convex–concave wavefront inversion operation. The effects of this mechanism on the negative refraction and wave focalization are investigated by using the finite difference time domain (FDTD) simulations. This study contributes to a better understanding of negative refraction and wave focusing mechanisms at the band edge frequencies, and shows the applications of the slab corner beam splitting and SC-air multilayer acoustic system. (paper)

Band gaps for the relativistic Mathieu potential

International Nuclear Information System (INIS)

Clerk, G.J.; McKellar, B.H.J.

1992-01-01

A study of the band structure of a massless particle in a cosine potential is made via the Dirac equation. It is shown that every alternate band gap disappears as a consequence of a periodicity of the potential combined with a peculiar symmetry of the Dirac equation. This basic potential is then used to study a simple one-dimensional model of the nucleus from which it is ascertained that modelling the mean field of the quarks in the nucleus via a pure scalar potential is unsatisfactory. A simple extension involving a combined scalar and vector potential is then proposed as a possible solution to this problem. The effect of the addition of this vector component to the band structure is also investigated. 32 refs

Phase synchronization of multiple klystrons in RF system

International Nuclear Information System (INIS)

Kwon, S.; Regan, A.; Wang, Y.M.; Rohlev, T.

1998-01-01

The Low Energy Demonstration Accelerator (LEDA) being constructed at Los Alamos National Laboratory will serve as the prototype for the low energy section of the Acceleration Production of Tritium (APT) accelerator. The first LEDA RF system includes three, 1.2 MW, 350 MHz, continuous wave, klystrons driving a radio frequency quadrupole (RFQ). A phase control loop is necessary for each individual klystron in order to guarantee the phase matching of these klystrons. To meet this objective, they propose adaptive PI controllers which are based on simple adaptive control. These controllers guarantee not only phase matching but also amplitude matching

Klystron High Power Operation for KOMAC 100-MeV Proton Linac

Energy Technology Data Exchange (ETDEWEB)

Seol, Kyung-Tae; Kim, Seong-Gu; Kwon, Hyeok-Jung; Kim, Han-Sung; Cho, Yong-Sub [KAERI, Daejeon (Korea, Republic of)

2015-05-15

The Korea multi-purpose accelerator complex (KOMAC) accelerator facility has a 100-MeV proton linac, five beam lines for 20-MeV beam utilization, and another five beam lines for 100-MeV beam utilization. The 100-MeV linac consists of a 50-keV proton injector based on a microwave ion source, a 3-MeV RFQ with a four-vane structure, and a 100-MeV DTL. Nine sets of 1MW klystrons have been operated for the 100-MeV proton linac. The klystron filament heating time was approximately 5700 hours in 2014, and RF operation time was 2863.4 hours. During the high power operation of the klystron, unstable RF waveforms appeared at the klystron output, and we have checked and performed cavity frequency adjustments, magnet and heater current, reflection from a circulator, klystron test without a circulator, and the frequency spectrum measurement. Nine sets of the klystrons have been operated for the KOMAC 100-MeV proton linac. The klystron filament heating time was 5700 hours and RF operation time was 2863.4 hours during the operation in 2014. Some klystrons have unstable RF waveforms at specific power level. We have checked and tested the cavity frequency adjustment, reflection from a circulator, high power test without a circulator, and frequency spectrum at the unstable RF.

Optical study of the band structure of wurtzite GaP nanowires

OpenAIRE

Assali, S.; Greil, J.; Zardo, I.; Belabbes, A.; de Moor, M.W.A.; Kölling, S.; Koenraad, P.M.; Bechstedt, F.; Bakkers, E.P.A.M.; Haverkort, J.E.M.

2016-01-01

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp...

Low-band gap copolymers containing thienothiadiazole units: Synthesis, optical, and electrochemical properties

Czech Academy of Sciences Publication Activity Database

Kmínek, Ivan; Výprachtický, Drahomír; Kříž, Jaroslav; Dybal, Jiří; Cimrová, Věra

2010-01-01

Roč. 48, č. 13 (2010), s. 2743-2756 ISSN 0887-624X R&D Projects: GA MŠk(CZ) 1M06031; GA AV ČR IAA4050409 Institutional research plan: CEZ:AV0Z40500505 Keywords : conjugated polymers * electrochemistry * low-band gap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.894, year: 2010

Relativistic klystron

International Nuclear Information System (INIS)

Marks, R.

1985-09-01

Theoretical analysis is presented of a relativisic klystron; i.e. a high-relativistic bunched electron beam which is sent through a succession of tuned cavities and has its energy replenished by periodic induction accelerator units. Parameters are given for a full-size device and for an experimental device using the FEL at the ETA; namely the ELF Facility. 6 refs., 2 figs

Band gap determination of Ni–Zn ferrites

Indian Academy of Sciences (India)

Nanocomposites of Ni–Zn with copolymer matrix of aniline and formaldehyde in presence of varying concentrations of zinc ions have been studied at room temperature and normal pressure. The energy band gap of these materials are determined by reflection spectra in the wavelength range 400–850 nm by ...

Determination of optical band gap of powder-form nanomaterials with improved accuracy

Science.gov (United States)

Ahsan, Ragib; Khan, Md. Ziaur Rahman; Basith, Mohammed Abdul

2017-10-01

Accurate determination of a material's optical band gap lies in the precise measurement of its absorption coefficients, either from its absorbance via the Beer-Lambert law or diffuse reflectance spectrum via the Kubelka-Munk function. Absorption coefficients of powder-form nanomaterials calculated from absorbance spectrum do not match those calculated from diffuse reflectance spectrum, implying the inaccuracy of the traditional optical band gap measurement method for such samples. We have modified the Beer-Lambert law and the Kubelka-Munk function with proper approximations for powder-form nanomaterials. Applying the modified method for powder-form nanomaterial samples, both absorbance and diffuse reflectance spectra yield exactly the same absorption coefficients and therefore accurately determine the optical band gap.

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment.

Science.gov (United States)

Yan, Rusen; Fathipour, Sara; Han, Yimo; Song, Bo; Xiao, Shudong; Li, Mingda; Ma, Nan; Protasenko, Vladimir; Muller, David A; Jena, Debdeep; Xing, Huili Grace

2015-09-09

van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibits novel physics phenomena that can power a range of electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse, and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions and broaden the potential applications of 2D layered materials.

High-power picosecond pulse delivery through hollow core photonic band gap fibers

DEFF Research Database (Denmark)

Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

2015-01-01

We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers......We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers...

Crystal and defect chemistry influences on band gap trends in alkaline earth perovskites

International Nuclear Information System (INIS)

Lee, Soonil; Woodford, William H.; Randall, Clive A.

2008-01-01

A number of perovskites with A-site alkaline earth chemistries being Ca, Sr, and Ba, and tetravalent cations including Ce, Zr, and Ti are measured for optical band gap and found to vary systematically with tolerance factor and lattice volume within limits defined by the chemistry of the octahedral site. This paper also focuses on the BaTiO 3 system, considering equilibrated nonstoichiometries, and determines the changes in band gap with respect to Ba/Ti ratios. It was found that the optical band gap changes in the solid solution regime and is invariant in the second phase regions, as would be expected. In the cases of Ba/Ti 1.0 stoichiometries, there is a distinct Urbach tail and the trend with lattice volume no longer holds. It is inferred that the V Ti q prime-2V O partial Schottky complex controls the band gap trend with Ba-rich nonstoichiometries

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

2014-09-15

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

International Nuclear Information System (INIS)

Asai, Hidehiro; Ota, Yukihiro; Kawabata, Shiro; Nori, Franco

2014-01-01

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate

Status report of a 500 GeV S-band linear collider study

International Nuclear Information System (INIS)

Balewski, K.; Bieler, M.; Bothe, W.; Bredehoeft, K.; Brinkmann, R.; Choroba, S.; Dwersteg, B.; Ebert, M.; Febel, A.; Fischer, R.; Floettmann, K.; Holzer, B.; Juergensen, H.; Kouptsidis, J.; Kumpfert, H.; Loeffler, F.; Marx, M.; Narciss, H.; Neumann, R.; Peters, F.; Peters, M.; Pillat, P.; Rossbach, J.; Schumann, G.; Schwarz, W.; Vilcins, S.; Voss, G.A.; Werner, M.; Wipf, S.; Wuempelmann, H.; Beyer, H.G.; Dehler, M.; Dohlus, M.; Ebeling, F.; Hahne, P.; Holtkamp, N.; Klatt, R.; Krawczyk, F.; Tsakanov, V.; Rienen, U. van; Wanzenberg, R.; Weiland, T.; Wolter, H.

1991-12-01

This paper describes the status of a feasibility study of a 500 GeV center of mass linear collider, which is based almost entirely on conventional rf-technology. The basic components are S-band travelling wave, constant-gradient accelerating structures and 130 MW klystrons. 3 GeV damping rings are used to produce extremely small emittances in both planes which are in the same range as those of the next generation synchrotron light sources. Very strong focussing in the linear accelerator and near the interaction region, as well as a dedicated chromatic correction scheme, are necessary to achieve spot sizes that have not been produced yet. The methods envisaged to stabilize the motion of the tiny beam along the 15 km long linac seem promising and give rise to be assumption that the proposed values can be reached with todays' available technology. (orig.)

Triple photonic band-gap structure dynamically induced in the presence of spontaneously generated coherence

International Nuclear Information System (INIS)

Gao Jinwei; Bao Qianqian; Wan Rengang; Cui Cuili; Wu Jinhui

2011-01-01

We study a cold atomic sample coherently driven into the five-level triple-Λ configuration for attaining a dynamically controlled triple photonic band-gap structure. Our numerical calculations show that three photonic band gaps with homogeneous reflectivities up to 92% can be induced on demand around the probe resonance by a standing-wave driving field in the presence of spontaneously generated coherence. All these photonic band gaps are severely malformed with probe reflectivities declining rapidly to very low values when spontaneously generated coherence is gradually weakened. The triple photonic band-gap structure can also be attained in a five-level chain-Λ system of cold atoms in the absence of spontaneously generated coherence, which however requires two additional traveling-wave fields to couple relevant levels.

Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

Science.gov (United States)

Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

2018-02-01

A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

Study on the properties of tunable prohibited band gaps for one-dimensional ternary magnetized plasma photonic crystals

International Nuclear Information System (INIS)

Zhang Haifeng; Zheng Jianping; Zhu Rongjun

2012-01-01

The transfer matrix method was applied to study on the properties of tunable prohibited band gaps for one-dimensional ternary magnetized plasma photonic crystals with TE wave arbitrary incident under ideal conditions. TE wave would be divided into left-handed circularly polarized wave and right-handed circularly polarized wave after propagation through one-dimensional ternary magnetized plasma photonic crystals. The calculated transmission coefficients were used to analyze the effects of parameter of plasma, plasma filling factor, incident angle and relative dielectric constant for dielectric layer on the properties of tunable prohibited band gap. The results illustrate that the width of band gaps can not be broadened by increasing plasma collision frequency, the numbers and width of band gaps can be tuned by changing plasma frequency, plasma filling factor and relative dielectric constant for dielectric layer. The band gaps for right-handed circularly polarized wave can be tuned by the plasma gyro frequency, but band gaps for the left-handed circularly polarized wave can't influenced. Low-frequency region of band gaps will be broadened, while high-frequency region of band gaps will be firstly narrow and then broaden with increasing incident angle. (authors)

Hypersonic modulation of light in three-dimensional photonic and phononic band-gap materials.

Science.gov (United States)

Akimov, A V; Tanaka, Y; Pevtsov, A B; Kaplan, S F; Golubev, V G; Tamura, S; Yakovlev, D R; Bayer, M

2008-07-18

The elastic coupling between the a-SiO2 spheres composing opal films brings forth three-dimensional periodic structures which besides a photonic stop band are predicted to also exhibit complete phononic band gaps. The influence of elastic crystal vibrations on the photonic band structure has been studied by injection of coherent hypersonic wave packets generated in a metal transducer by subpicosecond laser pulses. These studies show that light with energies close to the photonic band gap can be efficiently modulated by hypersonic waves.

Design and optimization of G-band extended interaction klystron with high output power

Science.gov (United States)

Li, Renjie; Ruan, Cunjun; Zhang, Huafeng

2018-03-01

A ladder-type Extended Interaction Klystron (EIK) with unequal-length slots in the G-band is proposed and designed. The key parameters of resonance cavities working in the π mode are obtained based on the theoretical analysis and 3D simulation. The influence of the device fabrication tolerance on the high-frequency performance is analyzed in detail, and it is found that at least 5 μm of machining precision is required. Thus, the dynamic tuning is required to compensate for the frequency shift and increase the bandwidth. The input and output coupling hole dimensions are carefully designed to achieve high output power along with a broad bandwidth. The effect of surface roughness of the metallic material on the output power has been investigated, and it is proposed that lower surface roughness leads to higher output power. The focusing magnetic field is also optimized to 0.75 T in order to maintain the beam transportation and achieve high output power. With 16.5 kV operating voltage and 0.30 A beam current, the output power of 360 W, the efficiency of 7.27%, the gain of 38.6 dB, and the 3 dB bandwidth of 500 MHz are predicted. The output properties of the EIK show great stability with the effective suppression of oscillation and mode competition. Moreover, small-signal theory analysis and 1D code AJDISK calculations are carried out to verify the results of 3D PIC simulations. A close agreement among the three methods proves the relative validity and the reliability of the designed EIK. Thus, it is indicated that the EIK with unequal-length slots has potential for power improvement and bandwidth extension.

A PPM-focused klystron at X-band with a traveling-wave output structure

International Nuclear Information System (INIS)

Eppley, K.R.

1995-01-01

We have developed algorithms for designing disk-loaded traveling-wave output structures for X-band klystrons to be used in the SLAC NLC. We use either a four- or five-cell structure in a π/2 mode. The disk radii are tapered to produce an approximately constant gradient. The matching calculation is not performed on the tapered structure, but rather on a coupler whose input and output cells are the same as the final cell of the tapered structure, and whose interior cells are the same as the penultimate cell in the tapered structure. 2-D calculations using CONDOR model the waveguide as a radial transmission line of adjustable impedance. 3-D calculations with MAFIA model the actual rectangular waveguide and coupling slot. A good match is obtained by adjusting the impedance of the final cell. In 3-D, this requires varying both the radius of the cell and the width of the aperture. When the output cell with the best match is inserted in the tapered structure, we obtain excellent cold-test agreement between the 2-D and 3-D models. We use hot-test simulations with CONDOR to design a structure with maximum efficiency and minimum surface fields. We have designed circuits at 11.424 Ghz for different perveances. At 440 kV, microperveance 1.2, we calculated 81 MW, 53 percent efficiency, with peak surface field 76 MV/m. A microperveance 0.6 design was done using a PPM stack for focusing. At 470 kV, 193 amps, we calculated 58.7 MW, 64.7 percent efficiency, peak surface field 62.3 MV/m. At 500 kV, 212 amps, we calculated 67.1 MW, 63.3 percent efficiency, peak surface field 66.0 MV/m. copyright 1995 American Institute of Physics

A unique power supply for the PEP II klystron at SLAC

International Nuclear Information System (INIS)

Cassel, R.; Nguyen, M.N.

1997-07-01

Each of the eight 1.2 MW RF klystrons for the PEP-II storage rings require a 2.5 MVA DC power supply of 83 Kv at 23 amps. The design for the supply was base on three factors, low cost, small size to fit existing substation pads, and good protection against damage to the klystron including klystron gun arcs. The supply uses a 12 pulse 12.5 KV primary thyristor star point controller with primary filter inductor to provide rapid voltage control, good voltage regulation, and fast turn off during klystron tube faults. The supply also uses a unique secondary rectifier, filter capacitor configuration to minimize the energy available under a klystron fault. The voltage control is from 0--90 KV with a regulation of < 0.1% and voltage ripple of < 1% P-P, (< 0.2% RMS) above 60 KV. The supply utilizes a thyristor crowbar, which under a klystron tube arc limits the energy in the klystron arc to < 5 joules. If the thyristor crowbar is disabled the energy supplied is < 40 joules into the arc. The size of the supply was reduced small enough to fit the existing PEP transformer yard pads. The cost of the power supply was < $140 per KVA

Investigation of photonic band gaps with special emphasis on hyperuniform structures

OpenAIRE

Siedentop, Lukas

2016-01-01

A toolbox of considerable size was collected within the course of this work that enables the study of photonic meta materials. It is now possible to successfully simulate, fabricate and moreover characterise meta materials with a photonic band gap. This is of great interest for applications, where waveguides are one possible object of interest, as well as fundamental theoretical investigations, namely identify the properties a pattern needs to posses to form such a photonic band gap, for exam...

From the Kohn-Sham band gap to the fundamental gap in solids. An integer electron approach.

Science.gov (United States)

Baerends, E J

2017-06-21

It is often stated that the Kohn-Sham occupied-unoccupied gap in both molecules and solids is "wrong". We argue that this is not a correct statement. The KS theory does not allow to interpret the exact KS HOMO-LUMO gap as the fundamental gap (difference (I - A) of electron affinity (A) and ionization energy (I), twice the chemical hardness), from which it indeed differs, strongly in molecules and moderately in solids. The exact Kohn-Sham HOMO-LUMO gap in molecules is much below the fundamental gap and very close to the much smaller optical gap (first excitation energy), and LDA/GGA yield very similar gaps. In solids the situation is different: the excitation energy to delocalized excited states and the fundamental gap (I - A) are very similar, not so disparate as in molecules. Again the Kohn-Sham and LDA/GGA band gaps do not represent (I - A) but are significantly smaller. However, the special properties of an extended system like a solid make it very easy to calculate the fundamental gap from the ground state (neutral system) band structure calculations entirely within a density functional framework. The correction Δ from the KS gap to the fundamental gap originates from the response part v resp of the exchange-correlation potential and can be calculated very simply using an approximation to v resp . This affords a calculation of the fundamental gap at the same level of accuracy as other properties of crystals at little extra cost beyond the ground state bandstructure calculation. The method is based on integer electron systems, fractional electron systems (an ensemble of N- and (N + 1)-electron systems) and the derivative discontinuity are not invoked.

Hybrid functional band gap calculation of SnO6 containing perovskites and their derived structures

International Nuclear Information System (INIS)

Lee, Hyewon; Cheong, S.W.; Kim, Bog G.

2015-01-01

We have studied the properties of SnO 6 octahedra-containing perovskites and their derived structures using ab initio calculations with different density functionals. In order to predict the correct band gap of the materials, we have used B3LYP hybrid density functional, and the results of B3LYP were compared with those obtained using the local density approximation and generalized gradient approximation data. The calculations have been conducted for the orthorhombic ground state of the SnO 6 containing perovskites. We also have expended the hybrid density functional calculation to the ASnO 3 /A'SnO 3 system with different cation orderings. We propose an empirical relationship between the tolerance factor and the band gap of SnO 6 containing oxide materials based on first principles calculation. - Graphical abstract: (a) Structure of ASnO 3 for orthorhombic ground state. The green ball is A (Ba, Sr, Ca) cation and the small (red) ball on edge is oxygen. SnO 6 octahedrons are plotted as polyhedron. (b) Band gap of ASnO 3 as a function of the tolerance factor for different density functionals. The experimental values of the band gap are marked as green pentagons. (c) ASnO 3 /A'SnO 3 superlattices with two types cation arrangement: [001] layered structure and [111] rocksalt structure, respectively. (d) B3LYP hybrid functional band gaps of ASnO 3 , [001] ordered superlattices, and [111] ordered superlattices of ASnO 3 /A'SnO 3 as a function of the effective tolerance factor. Note the empirical linear relationship between the band gap and effective tolerance factor. - Highlights: • We report the hybrid functional band gap calculation of ASnO 3 and ASnO 3 /A'SnO 3 . • The band gap of ASnO 3 using B3LYP functional reproduces the experimental value. • We propose the linear relationship between the tolerance factor and the band gap

Analysis of photonic band gap in novel piezoelectric photonic crystal

Science.gov (United States)

Malar Kodi, A.; Doni Pon, V.; Joseph Wilson, K. S.

2018-03-01

The transmission properties of one-dimensional novel photonic crystal having silver-doped novel piezoelectric superlattice and air as the two constituent layers have been investigated by means of transfer matrix method. By changing the appropriate thickness of the layers and filling factor of nanocomposite system, the variation in the photonic band gap can be studied. It is found that the photonic band gap increases with the filling factor of the metal nanocomposite and with the thickness of the layer. These structures possess unique characteristics enabling one to operate as optical waveguides, selective filters, optical switches, integrated piezoelectric microactuators, etc.

Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures

Directory of Open Access Journals (Sweden)

Yijie Zeng

2014-10-01

Full Text Available The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs with a diameter of 1.1–2.8 nm are calculated by means of the first principle calculation. Band gaps of both ZnSe-core/Si-shell and Si-core/ZnSe-shell NWs are much smaller than those of pure ZnSe or Si NWs. Band alignment analysis reveals that the small band gaps of ZnSe/Si core-shell NWs are caused by the interface state. Fixing the ZnSe core size and enlarging the Si shell would turn the NWs from intrinsic to p-type, then to metallic. However, Fixing the Si core and enlarging the ZnSe shell would not change the band gap significantly. The partial charge distribution diagram shows that the conduction band maximum (CBM is confined in Si, while the valence band maximum (VBM is mainly distributed around the interface. Our findings also show that the band gap and conductivity type of ZnSe/Si core-shell NWs can be tuned by the concentration and diameter of the core-shell material, respectively.

Tuning the band gap in hybrid tin iodide perovskite semiconductors using structural templating.

Science.gov (United States)

Knutson, Jeremy L; Martin, James D; Mitzi, David B

2005-06-27

Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.

Theoretical study of relative width of photonic band gap for the 3-D ...

Indian Academy of Sciences (India)

... of refractive index and relative radius of the photonic band gap for the fcc closed packed 3-D dielectric microstructure are reported and comparison of experimental observations and theoretical predictions are given. This work is useful for the understanding of photonic crystals and occurrence of the photonic band gap.

Relativistic klystron research at SLAC and LLNL

International Nuclear Information System (INIS)

Allen, M.A.; Callin, R.S.; Deruyter, H.

1988-06-01

We are developing relativistic klystrons as a power source for high gradient accelerator applications such as large linear electron-positron colliders and compact accelerators. We have attained 200 MW peak power at 11.4 GHz from a relativistic klystron, and 140 MV/m longitudinal gradient in a short 11.4 GHz accelerator section. We report here briefly on our experiments so far. 5 refs., 1 fig., 1 tab

Klystron life results in particle accelerator applications

International Nuclear Information System (INIS)

Bohlen, Heinz

2002-01-01

Based on reports contributed by various particle accelerator sites, among them DESY, CERN, and LANL, Weibull life time characteristics have been calculated for the klystrons used at these institutions. Supported by evaluations of the technologies and the operational conditions involved, the results, sometimes surprising and unexpected, present material that can be valuable for logistic considerations, the planning of future accelerators, and naturally for the design of future klystrons

Band gap narrowing and fluorescence properties of nickel doped SnO2 nanoparticles

International Nuclear Information System (INIS)

Ahmed, Arham S.; Shafeeq, M. Muhamed; Singla, M.L.; Tabassum, Sartaj; Naqvi, Alim H.; Azam, Ameer

2011-01-01

Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration ( 2 -SnO 2-x alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

Graphene-induced band gap renormalization in polythiophene: a many-body perturbation study

Science.gov (United States)

Marsusi, F.; Fedorov, I. A.; Gerivani, S.

2018-01-01

Density functional theory and many-body perturbation theory at the G0W0 level are employed to study the electronic properties of polythiophene (PT) adsorbed on the graphene surface. Analysis of the charge density difference shows that substrate-adsorbate interaction leads to a strong physisorption and interfacial electric dipole moment formation. The electrostatic potential displays a  -0.19 eV shift in the graphene work function from its initial value of 4.53 eV, as the result of the interaction. The LDA band gap of the polymer does not show any change. However, the band structure exhibits weak orbital hybridizations resulting from slight overlapping between the polymer and graphene states wave functions. The interfacial polarization effects on the band gap and levels alignment are investigated at the G0W0 level and show a notable reduction of PT band gap compared to that of the isolated chain.

Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

Energy Technology Data Exchange (ETDEWEB)

Agawane, G.L., E-mail: agawaneganesh@gmail.com [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shin, Seung Wook [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Vanalakar, S.A. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Moholkar, A.V. [Electrochemical Mat. Lab., Department of Physics, Shivaji University, Kolhapur 416-004 (India); Gurav, K.V.; Suryawanshi, M.P. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Lee, Jeong Yong [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Yun, Jae Ho, E-mail: yunjh92@kier.re.kr [Photovoltaic Research Group, KIER, Jang-Dong, Yuseong-Gu, Daejeon 305-343 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of)

2014-07-01

Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(S + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.

Tunable band gap and optical properties of surface functionalized Sc2C monolayer

International Nuclear Information System (INIS)

Wang Shun; Du Yu-Lei; Liao Wen-He

2017-01-01

Using the density functional theory, we have investigated the electronic and optical properties of two-dimensional Sc 2 C monolayer with OH, F, or O chemical groups. The electronic structures reveal that the functionalized Sc 2 C monolayers are semiconductors with a band gap of 0.44–1.55 eV. The band gap dependent optical parameters, like dielectric function, absorption coefficients, reflectivity, loss function, and refraction index were also calculated for photon energy up to 20 eV. At the low-energy region, each optical parameter shifts to red, and the peak increases obviously with the increase of the energy gap. Consequently, Sc 2 C monolayer with a tunable band gap by changing the type of surface chemical groups is a promising 2D material for optoelectronic devices. (paper)

Multifunctional Binary Monolayers Ge xP y: Tunable Band Gap, Ferromagnetism, and Photocatalyst for Water Splitting.

Science.gov (United States)

Li, Pengfei; Zhang, Wei; Li, Dongdong; Liang, Changhao; Zeng, Xiao Cheng

2018-06-04

The most stable structures of two-dimensional Ge x P y and Ge x As y monolayers with different stoichiometries (e.g., GeP, GeP 2 , and GeP 3 ) are explored systematically through the combination of the particle-swarm optimization technique and density functional theory optimization. For GeP 3 , we show that the newly predicted most stable C2/ m structure is 0.16 eV/atom lower in energy than the state-of-the-art P3̅m1 structure reported previously ( Nano Lett. 2017, 17, 1833). The computed electronic band structures suggest that all the stable and metastable monolayers of Ge x P y are semiconductors with highly tunable band gaps under the biaxial strain, allowing strain engineering of their band gaps within nearly the whole visible-light range. More interestingly, the hole doping can convert the C2/ m GeP 3 monolayer from nonmagnetic to ferromagnetic because of its unique valence band structure. For the GeP 2 monolayer, the predicted most stable Pmc2 1 structure is a (quasi) direct-gap semiconductor that possesses a high electron mobility of ∼800 cm 2 V -1 s -1 along the k a direction, which is much higher than that of MoS 2 (∼200 cm 2 V -1 s -1 ). More importantly, the Pmc2 1 GeP 2 monolayer not only can serve as an n-type channel material in field-effect transistors but also can be an effective catalyst for splitting water.

CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)

2012-09-20

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.

Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te

Directory of Open Access Journals (Sweden)

Huazheng Sun

2017-09-01

Full Text Available Monolayer metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te form a new class of two-dimensional semiconductors with indirect band gaps, and their band alignment information is investigated via first principles calculations. The dependence of band gap, valence-band maximum, conduction band minimum, and charge transfer on the M or X element has been obtained and can be understood from the orbital analysis of the band edges. Potential applications of metal monochalcogenides to design van der Waals heterostructures and catalyse the photo-splitting reaction of water have been discussed.

Band gap opening in silicene on MgBr2(0001) induced by Li and Na

KAUST Repository

Zhu, Jiajie

2014-11-12

Silicene consists of a monolayer of Si atoms in a buckled honeycomb structure and is expected to be well compatible with the current Si-based technology. However, the band gap is strongly influenced by the substrate. In this context, the structural and electronic properties of silicene on MgBr2(0001) modified by Li and Na are investigated by first-principles calculations. Charge transfer from silicene (substrate) to substrate (silicene) is found for substitutional doping (intercalation). As compared to a band gap of 0.01 eV on the pristine substrate, strongly enhanced band gaps of 0.65 eV (substitutional doping) and 0.24 eV (intercalation) are achieved. The band gap increases with the dopant concentration.

Absolute photonic band gap in 2D honeycomb annular photonic crystals

International Nuclear Information System (INIS)

Liu, Dan; Gao, Yihua; Tong, Aihong; Hu, Sen

2015-01-01

Highlights: • A two-dimensional honeycomb annular photonic crystal (PC) is proposed. • The absolute photonic band gap (PBG) is studied. • Annular PCs show larger PBGs than usual air-hole PCs for high refractive index. • Annular PCs with anisotropic rods show large PBGs for low refractive index. • There exist optimal parameters to open largest band gaps. - Abstract: Using the plane wave expansion method, we investigate the effects of structural parameters on absolute photonic band gap (PBG) in two-dimensional honeycomb annular photonic crystals (PCs). The results reveal that the annular PCs possess absolute PBGs that are larger than those of the conventional air-hole PCs only when the refractive index of the material from which the PC is made is equal to 4.5 or larger. If the refractive index is smaller than 4.5, utilization of anisotropic inner rods in honeycomb annular PCs can lead to the formation of larger PBGs. The optimal structural parameters that yield the largest absolute PBGs are obtained

Sub-band-gap absorption of Cu(In,Ga)Se{sub 2} thin film semiconductors

Energy Technology Data Exchange (ETDEWEB)

Meessen, Max; Brueggemann, Rudolf; Bauer, Gottfried H. [Carl von Ossietzky University Oldenburg (Germany)

2012-07-01

The sub-band-gap absorption of Cu(In,Ga)Se{sub 2} thin films has been studied by photothermal deflection spectroscopy (PDS) in conjunction with optical transmittance spectroscopy. The resulting absorption coefficients are compared to those calculated from photoluminescence spectra using Planck's generalized law. Quantities related to the absorption like Urbach energy and defect densities are derived from the absorption curves. This concept has been applied to a series of bromine-methanol etched Cu(In{sub x-1},Ga{sub x})Se{sub 2} (x=0.3) absorbers with varying thicknesses. A shift in the band gap is observed with both methods and can be related to the gallium gradient in the samples. In contrast, the Urbach energy and defect absorption values are not substantially affected by the etching process. The influence of CdS buffer layers or highly thermally conductive metallic back contacts on PDS results is studied by measuring nominally identical samples with and without those layers.

High-Efficiency Klystron Design for the CLIC Project

CERN Document Server

Mollard, Antoine; Peauger, Franck; Plouin, Juliette; Beunas, Armel; Marchesin, Rodolphe

2017-01-01

The CLIC project requests new type of RF sources for the high power conditioning of the accelerating cavities. We are working on the development of a new kind of high-efficiency klystron to fulfill this need. This work is performed under the EuCARD-2 European program and involves theoretical and experimental study of a brand new klystron concept.

Conductance of graphene-based double-barrier nanostructures

Energy Technology Data Exchange (ETDEWEB)

Setare, M R [Department of Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Jahani, D, E-mail: Rezakord@ipm.co, E-mail: Dariush110@gmail.co [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-22

The effect of a mass gap on the conductance of graphene double-barrier heterojunctions is studied. By obtaining the 2D expression for the electronic transport of the low energy excitations of pure graphene through double-barrier systems, it is found that the conductivity of these structures does not depend on the type of charge carriers in the zones of the electric field. However, a finite induced gap in the graphene spectrum makes conductivity dependent on the energy band index. We also discuss a few controversies concerning double-barrier systems stemming from an improper choice of the scattering angle. Then it is observed that, for some special values of the incident energy and potential's height, graphene junctions behave like left-handed materials, resulting in a maximum value for the conductivity.

Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

Czech Academy of Sciences Publication Activity Database

Álvarez, M. P.; del Corro, Elena; Morales-García, A.; Kavan, Ladislav; Kalbáč, Martin; Frank, Otakar

2015-01-01

Roč. 15, č. 5 (2015), s. 3139-3146 ISSN 1530-6984 R&D Projects: GA ČR GA14-15357S; GA MŠk LL1301 Institutional support: RVO:61388955 Keywords : Molybdenum disulfide * band gap engineering * out-of-plane compression Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 13.779, year: 2015

Band gap tuning and fluorescence properties of lead sulfide Pb0.9A0.1S (A: Fe, Co, and Ni) nanoparticles by transition metal doping

Science.gov (United States)

Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

2018-02-01

Transition metal-doped lead sulfide nanoparticles (PbS-NPs) were synthesized by co-precipitation method. The crystallite phase and morphological studies were carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Optical studies were performed by UV-Visible absorption, fluorescence emission spectroscopy and Fourier transforms infrared spectroscopy (FTIR). XRD analysis reveals that the pure and transition metal-doped PbS- NPs have a single crystalline phase with cubic structure devoided of any other secondary phase. The notable effect on optical absorbance and band gap was observed with transition metal doping in lead sulphide. The optical energy band gap values were found to increase with the doping of transition metal. UV-Visible absorption and fluorescence emission spectra display a blue shift with subsequent transition metal doping which may arise due to quantum confinement effect making it worth for having applications in optoelectronic devices.

Modulation of band gap by an applied electric field in BN-based heterostructures

Science.gov (United States)

Luo, M.; Xu, Y. E.; Zhang, Q. X.

2018-05-01

First-principles density functional theory (DFT) calculations are performed on the structural and electronic properties of the SiC/BN van der Waals (vdW) heterostructures under an external electric field (E-field). Our results reveal that the SiC/BN vdW heterostructure has a direct band gap of 2.41 eV in the raw. The results also imply that electrons are likely to transfer from BN to SiC monolayer due to the deeper potential of BN monolayer. It is also observed that, by applying an E-field, ranging from -0.50 to +0.65 V/Å, the band gap decreases from 2.41 eV to zero, which presents a parabola-like relationship around 0.0 V/Å. Through partial density of states (PDOS) plots, it is revealed that, p orbital of Si, C, B, and N atoms are responsible for the significant variations of band gap. These obtained results predict that, the electric field tunable band gap of the SiC/BN vdW heterostructures carries potential applications for nanoelectronics and spintronic device applications.

Design for maximum band-gaps in beam structures

DEFF Research Database (Denmark)

Olhoff, Niels; Niu, Bin; Cheng, Gengdong

2012-01-01

This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...

Formation and coupling of band gaps in a locally resonant elastic system comprising a string with attached resonators

International Nuclear Information System (INIS)

Xiao Yong; Mace, Brian R.; Wen Jihong; Wen Xisen

2011-01-01

A uniform string with periodically attached spring-mass resonators represents a simple locally resonant continuous elastic system whose band gap mechanisms are basic to more general and complicated problems. In this Letter, analytical models with explicit formulations are provided to understand the band gap mechanisms of such a system. Some interesting phenomena are demonstrated and discussed, such as asymmetric/symmetric attenuation behavior within a resonance gap, and the realization of a super-wide gap due to exact coupling between Bragg and resonance gaps. In addition, some approximate formulas for the evaluation of low frequency resonance gaps are derived using an approach different from existing investigations. - Research highlights: → We examine band gaps in a special one-dimensional locally resonant system. → Bragg and resonance gaps co-exist. → Explicit formulas for locating band edges are derived. → Exact physical models are used to clarify the band gap formation mechanisms. → Coupling between Bragg and resonance gaps leads to a super-wide gap.

Antenna Gain Enhancement Using a Photonic Band Gap Reflector

National Research Council Canada - National Science Library

Schloer, Karl

1999-01-01

Scientists have long known that periodic structures can filter electromagnetic (EM) waves. In the last decade, extension of one- and two-dimensionally periodic structures into a third periodic dimension has produced photonic band gap...

Photonic band gap engineering in 2D photonic crystals

Indian Academy of Sciences (India)

Department of Applied Physics, Delhi College of Engineering, Faculty of Technology. (University of ... Photonic crystal; photonic band gap; plane-wave expansion method. PACS Nos 71.20 .... Numerical analysis and results. To obtain the ...

Band Edge Dynamics and Multiexciton Generation in Narrow Band Gap HgTe Nanocrystals.

Science.gov (United States)

Livache, Clément; Goubet, Nicolas; Martinez, Bertille; Jagtap, Amardeep; Qu, Junling; Ithurria, Sandrine; Silly, Mathieu G; Dubertret, Benoit; Lhuillier, Emmanuel

2018-04-11

Mercury chalcogenide nanocrystals and especially HgTe appear as an interesting platform for the design of low cost mid-infrared (mid-IR) detectors. Nevertheless, their electronic structure and transport properties remain poorly understood, and some critical aspects such as the carrier relaxation dynamics at the band edge have been pushed under the rug. Some of the previous reports on dynamics are setup-limited, and all of them have been obtained using photon energy far above the band edge. These observations raise two main questions: (i) what are the carrier dynamics at the band edge and (ii) should we expect some additional effect (multiexciton generation (MEG)) as such narrow band gap materials are excited far above the band edge? To answer these questions, we developed a high-bandwidth setup that allows us to understand and compare the carrier dynamics resonantly pumped at the band edge in the mid-IR and far above the band edge. We demonstrate that fast (>50 MHz) photoresponse can be obtained even in the mid-IR and that MEG is occurring in HgTe nanocrystal arrays with a threshold around 3 times the band edge energy. Furthermore, the photoresponse can be effectively tuned in magnitude and sign using a phototransistor configuration.

Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2017-01-01

Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

1-MW klystron for fusion plasma heating

International Nuclear Information System (INIS)

Okamoto, Tadashi; Miyake, Setsuo; Ohno, Hiroaki

1985-01-01

A plasma test apparatus to bring about the critical plasma conditions for nuclear fusion is now under construction in Japan Atomic Energy Research Institute. Among various means of plasma heating, the most promising is the lower hybrid resonance heating (LHRF) in the 2-GHz region. Although it has so far requied 7 to 8 MW of microwave power for the plasma test apparatus, the new klystron, E3778, now constructed by Toshiba has the world's highest output power of 1 MW in the 2-GHz region. In addition to the excellent high-power operation for 10 seconds, the wide operating frequency range of 1.7 to 2.26 GHz by dint of sophisticated high-speed tuning mechanism, and the high durability to reflected power of up to 2.0 of VSWR are the high-lighted features of this klystron, which have never been achieved by conventional klystrons. (author)

Optical band gap tuning and electrical properties of polyaniline and its nanocomposites for hybrid solar cell application

Science.gov (United States)

Singh, R.; Choudhary, R. B.; Kandulna, R.

2018-05-01

Hcl doped conducting polyaniline-CdS nanocomposite has been prepared via In-situ polymerization in which cadmium nitrate was used as a source for cadmium. The structural morphology was investigated using FESEM and the presence of fibrous polyaniline and CdS nanoparticles. The synthesis of CdS and polyaniline was confirmed using the XRD analysis. I-V characteristic was used to explore the electrical behavior of PANI and its nanocoposites. Optical properties were studied and minimum band gap with highest band absorbance was found for synergistic concentration PANI-CdS (10%) for solar cells application.

Ultrawide low frequency band gap of phononic crystal in nacreous composite material

International Nuclear Information System (INIS)

Yin, J.; Huang, J.; Zhang, S.; Zhang, H.W.; Chen, B.S.

2014-01-01

The band structure of a nacreous composite material is studied by two proposed models, where an ultrawide low frequency band gap is observed. The first model (tension-shear chain model) with two phases including brick and mortar is investigated to describe the wave propagation in the nacreous composite material, and the dispersion relation is calculated by transfer matrix method and Bloch theorem. The results show that the frequency ranges of the pass bands are quite narrow, because a special tension-shear chain motion in the nacreous composite material is formed by some very slow modes. Furthermore, the second model (two-dimensional finite element model) is presented to investigate its band gap by a multi-level substructure scheme. Our findings will be of great value to the design and synthesis of vibration isolation materials in a wide and low frequency range. Finally, the transmission characteristics are calculated to verify the results. - Highlights: • A Brick-and-Mortar structure is used to discuss wave propagation through nacreous materials. • A 1D Bloch wave solution of nacreous materials with a tension-shear chain model is obtained. • The band structure and transmission characteristics of nacreous materials with the FE model are examined. • An ultrawide low frequency band gap is found in nacreous materials with both theory and FE model

Hybrid functional band gap calculation of SnO{sub 6} containing perovskites and their derived structures

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyewon [Department of Physics, Pusan National University, Pusan 609-735, Republic of South Korea (Korea, Republic of); Cheong, S.W. [Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Kim, Bog G., E-mail: boggikim@pusan.ac.kr [Department of Physics, Pusan National University, Pusan 609-735, Republic of South Korea (Korea, Republic of)

2015-08-15

We have studied the properties of SnO{sub 6} octahedra-containing perovskites and their derived structures using ab initio calculations with different density functionals. In order to predict the correct band gap of the materials, we have used B3LYP hybrid density functional, and the results of B3LYP were compared with those obtained using the local density approximation and generalized gradient approximation data. The calculations have been conducted for the orthorhombic ground state of the SnO{sub 6} containing perovskites. We also have expended the hybrid density functional calculation to the ASnO{sub 3}/A'SnO{sub 3} system with different cation orderings. We propose an empirical relationship between the tolerance factor and the band gap of SnO{sub 6} containing oxide materials based on first principles calculation. - Graphical abstract: (a) Structure of ASnO{sub 3} for orthorhombic ground state. The green ball is A (Ba, Sr, Ca) cation and the small (red) ball on edge is oxygen. SnO{sub 6} octahedrons are plotted as polyhedron. (b) Band gap of ASnO{sub 3} as a function of the tolerance factor for different density functionals. The experimental values of the band gap are marked as green pentagons. (c) ASnO{sub 3}/A'SnO{sub 3} superlattices with two types cation arrangement: [001] layered structure and [111] rocksalt structure, respectively. (d) B3LYP hybrid functional band gaps of ASnO{sub 3}, [001] ordered superlattices, and [111] ordered superlattices of ASnO{sub 3}/A'SnO{sub 3} as a function of the effective tolerance factor. Note the empirical linear relationship between the band gap and effective tolerance factor. - Highlights: • We report the hybrid functional band gap calculation of ASnO{sub 3} and ASnO{sub 3}/A'SnO{sub 3}. • The band gap of ASnO{sub 3} using B3LYP functional reproduces the experimental value. • We propose the linear relationship between the tolerance factor and the band gap.

Designing double-gap linear accelerators for a wide mass range

International Nuclear Information System (INIS)

Lysenko, W.P.; Wadlinger, E.A.; Rusnak, B.; Krawczyk, F.; Saadatmand, K.; Wan, Z.

1998-01-01

For applications like ion implantation, rf linacs using double-gap structures with external resonators can be used because they are practical at low frequencies. However, since the two gaps associated with a given resonator cannot be individually phased, it is not obvious how to build a linac that can efficiently accelerate particles having different mass/charge ratios. This paper describes the beam dynamics of double-gap rf linacs and shows how to maximize the range of mass/charge ratios. The theory also tells one how to rescale a linac tune (i.e., reset the voltages and phases) so that a new particle, having a different mass or charge, will behave similarly to the original particle

Acoustic band gaps of the woodpile sonic crystal with the simple cubic lattice

Energy Technology Data Exchange (ETDEWEB)

Wu, Liang-Yu; Chen, Lien-Wen, E-mail: chenlw@mail.ncku.edu.t [Department of Mechanical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2011-02-02

This study theoretically and experimentally investigates the acoustic band gap of a three-dimensional woodpile sonic crystal. Such crystals are built by blocks or rods that are orthogonally stacked together. The adjacent layers are perpendicular to each other. The woodpile structure is embedded in air background. Their band structures and transmission spectra are calculated using the finite element method with a periodic boundary condition. The dependence of the band gap on the width of the stacked rods is discussed. The deaf bands in the band structure are observed by comparing with the calculated transmission spectra. The experimental transmission spectra for the {Gamma}-X and {Gamma}-X' directions are also presented. The calculated results are compared with the experimental results.

Engineering the hypersonic phononic band gap of hybrid Bragg stacks.

Science.gov (United States)

Schneider, Dirk; Liaqat, Faroha; El Boudouti, El Houssaine; El Hassouani, Youssef; Djafari-Rouhani, Bahram; Tremel, Wolfgang; Butt, Hans-Jürgen; Fytas, George

2012-06-13

We report on the full control of phononic band diagrams for periodic stacks of alternating layers of poly(methyl methacrylate) and porous silica combining Brillouin light scattering spectroscopy and theoretical calculations. These structures exhibit large and robust on-axis band gaps determined by the longitudinal sound velocities, densities, and spacing ratio. A facile tuning of the gap width is realized at oblique incidence utilizing the vector nature of the elastic wave propagation. Off-axis propagation involves sagittal waves in the individual layers, allowing access to shear moduli at nanoscale. The full theoretical description discerns the most important features of the hypersonic one-dimensional crystals forward to a detailed understanding, a precondition to engineer dispersion relations in such structures.

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

International Nuclear Information System (INIS)

Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

2016-01-01

The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception–and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In 2 O 3 (ITO)—converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein–Moss shift that are consistent with previous studies on In 2 O 3 single crystals and thin films. - Highlights: • The Tauc method of band gap measurement is re-evaluated for crystalline materials. • Graphical method proposed for extracting optical band gaps from absorption spectra. • The proposed method incorporates an energy broadening term for energy transitions. • Values for ITO were self-consistent between two different measurement methods.

Effects of corrugation shape on frequency band-gaps for longitudinal wave motion in a periodic elastic layer

DEFF Research Database (Denmark)

Sorokin, Vladislav

2016-01-01

The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band-gaps are det......The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band......, harmonic in the corrugation series. The revealed insights into the mechanism of band-gap formation can be used to predict locations and widths of all frequency band-gaps featured by any corrugation shape. These insights are general and can be valid also for other types of wave motion in periodic structures...

Coupled polaritonic band gaps in the anisotropic piezoelectric superlattices

Science.gov (United States)

Tang, Zheng-Hua; Jiang, Zheng-Sheng; Chen, Tao; Jiang, Chun-Zhi; Lei, Da-Jun; Huang, Jian-Quan; Qiu, Feng; Yao, Min; Huang, Xiao-Yi

2018-01-01

Anisotropic piezoelectric superlattices (APSs) with the periodic arrangement of polarized anisotropic piezoelectric domains in a certain direction are presented, in which the coupled polaritonic band gaps (CPBGs) can be obtained in the whole Brillouin Zone and the maximum relative bandwidth (band-gap sizes divided by their midgap frequencies) of 5.1% can be achieved. The general characteristics of the APSs are similar to those of the phononic crystals composed of two types of materials, with the main difference being the formation mechanism of the CPBGs, which originate from the couplings between lattice vibrations along two different directions and electromagnetic waves rather than from the periodical modulation of density and elastic constants. In addition, there are no lattice mismatches because the APSs are made of the same material. Thus, the APSs can also be extended to the construction of novel acousto-optic devices.

Quasiparticle band gap of organic-inorganic hybrid perovskites: Crystal structure, spin-orbit coupling, and self-energy effects

Science.gov (United States)

Gao, Weiwei; Gao, Xiang; Abtew, Tesfaye A.; Sun, Yi-Yang; Zhang, Shengbai; Zhang, Peihong

2016-02-01

The quasiparticle band gap is one of the most important materials properties for photovoltaic applications. Often the band gap of a photovoltaic material is determined (and can be controlled) by various factors, complicating predictive materials optimization. An in-depth understanding of how these factors affect the size of the gap will provide valuable guidance for new materials discovery. Here we report a comprehensive investigation on the band gap formation mechanism in organic-inorganic hybrid perovskites by decoupling various contributing factors which ultimately determine their electronic structure and quasiparticle band gap. Major factors, namely, quasiparticle self-energy, spin-orbit coupling, and structural distortions due to the presence of organic molecules, and their influences on the quasiparticle band structure of organic-inorganic hybrid perovskites are illustrated. We find that although methylammonium cations do not contribute directly to the electronic states near band edges, they play an important role in defining the band gap by introducing structural distortions and controlling the overall lattice constants. The spin-orbit coupling effects drastically reduce the electron and hole effective masses in these systems, which is beneficial for high carrier mobilities and small exciton binding energies.

Tuning and switching of band gap of the periodically undulated beam by the snap through buckling

Directory of Open Access Journals (Sweden)

Y. Li

2017-05-01

Full Text Available We propose highly tuning and switching band gaps of phononic crystals through the snap through buckling by investigating wave propagation in a designed tractable undulated beam with single material and periodically arched shape. A series of numerical analyses are conducted to offer a thorough understanding of the evolution of the band gaps as a function of the vertical applied load. We find out that the interesting snap through buckling induced by the vertical load can alter the width of the band gap of the undulated beam dramatically, even switch them on and off. Our researches show an effective strategy to tune the band gaps of phononic crystals through the snap through buckling behavior.

A ppM-focused klystron at X-band with a travelling-wave output structure

International Nuclear Information System (INIS)

Eppley, K.R.

1994-10-01

We have developed algorithms for designing disk-loaded travelling-wave output structures for X-band klystrons to be used in the SLAC NLC. We use either a four- or five-cell structure in a π/2 mode. The disk radii are tapered to produce an approximately constant gradient. The matching calculation is not performed on the tapered structure, but rather on a coupler whose input and output cells are the same as the final cell of the tapered structure, and whose interior cells are the same as the penultimate cell in the tapered structure. 2-D calculations using CONDOR model the waveguide as a radial transmission line of adjustable impedance. 3-D calculations with MAFIA model the actual rectangular waveguide and coupling slot. A good match is obtained by adjusting the impedance of the final cell. In 3D, this requires varying both the radius of the cell and the width of the aperture. When the output cell with the best match is inserted in the tapered structure, we obtain excellent cold-test agreement between the 2-D and 3-D models. We use hot-test simulations with CONDOR to design a structure with maximum efficiency and minimum surface fields. We have designed circuits at 11.424 GHz for different perveances. At 440 kV, microperveance 1.2, we calculated 81 MW, 53 percent efficiency, with peak surface field 76 MV/m. A microperveance 0.6 design was done using a ppM stack for focusing. At 470 kV, 193 amps, we calculated 58.7 MW, 64.7 percent efficiency, peak surface field 62.3 MV/m. At 500 kV, 212 amps, we calculated 67.1 MW, 63.3 percent efficiency, peak surface field 66.0 MV/m

Design and development of low level S-Band RF control system for IRFEL injector LINAC

International Nuclear Information System (INIS)

Mohania, Praveen; Mahawar, Ashish; Singh, Adarsh Pratap; Namdeo, Rajkumar; Baxy, Deodatta; Shrivastava, Purushottam

2015-01-01

A low level RF system has been designed and developed for phase and amplitude stabilization of S- Band microwave power being fed to fundamental buncher cavity and the injector LINAC structure of the Infra Red Free Electron Laser being developed at RRCAT Indore. The system uses analog phase shifters and voltage variable attenuators to control the phase and amplitude respectively, the control voltages for phase shifters and attenuators are generated using a 12 Bit ADC and is software controlled. The system has a slow feedback to correct phase and amplitude drifts occurring due to thermal variations and a fast feed forward mechanism to vary amplitude and phase of the output pulse to compensate beam loading and to shape the klystron output power. The present paper describes the design aspects of the LLRF system. (author)

Electronic structures and band gaps of chains and sheets based on phenylacetylene units

International Nuclear Information System (INIS)

Kondo, Masakazu; Nozaki, Daijiro; Tachibana, Masamitsu; Yumura, Takashi; Yoshizawa, Kazunari

2005-01-01

We investigate the electronic structures of polymers composed of π-conjugated phenylacetylene (PA) units, m-PA-based and p-PA-based wires, at the extended Hueckel level of theory. It is demonstrated that these conjugated systems should have a variety of electric conductance. All of the one-dimensional (1D) chains and the two-dimensional (2D) sheet based on the m-PA unit are insulators with large band gaps of 2.56 eV because there is no effective orbital interaction with neighboring chains. On the other hand, p-PA-based 1D chains have relatively small band gaps that decrease with an increase in chain width (1.17-1.74 eV) and are semiconductive. The p-PA-based sheet called 'graphyne', a 2D-limit of the p-PA-based 1D chains, shows a small band gap of 0.89 eV. The variety of band electronic structures is discussed in terms of frontier crystal orbitals

Gap deformation and classical wave localization in disordered two-dimensional photonic-band-gap materials

International Nuclear Information System (INIS)

Lidorikis, E.; Sigalas, M. M.; Economou, E. N.; Soukoulis, C. M.

2000-01-01

By using two ab initio numerical methods, we study the effects that disorder has on the spectral gaps and on wave localization in two-dimensional photonic-band-gap materials. We find that there are basically two different responses depending on the lattice realization (solid dielectric cylinders in air or vice versa), the wave polarization, and the particular form under which disorder is introduced. Two different pictures for the photonic states are employed, the ''nearly free'' photon and the ''strongly localized'' photon. These originate from the two different mechanisms responsible for the formation of the spectral gaps, i.e., multiple scattering and single scatterer resonances, and they qualitatively explain our results. (c) 2000 The American Physical Society

Photonic band gap engineering in 2D photonic crystals

Indian Academy of Sciences (India)

-dimensional photonic crystals with square lattices composed of air holes in dielectric and vice versa i.e., dielectric rods in air, using the plane-wave expansion method are investigated. We then study, how the photonic band gap size is ...

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Klystron 'efficiency loop' for the ALS storage ring RF system

International Nuclear Information System (INIS)

Kwiatkowski, Slawomir; Julian, Jim; Baptiste, Kenneth

2002-01-01

The recent energy crisis in California has led us to investigate the high power RF systems at the Advanced Light Source (ALS) in order to decrease the energy consumption and power costs. We found the Storage Ring Klystron Power Amplifier system operating as designed but with significant power waste. A simple proportional-integrator (PI) analog loop, which controls the klystron collector beam current, as a function of the output RF power, has been designed and installed. The design considerations, besides efficiency improvement, were to interface to the existing system without major expense. They were to also avoid the klystron cathode power supply filter's resonance in the loop's dynamics, and prevent a conflict with the existing Cavity RF Amplitude Loop dynamics. This efficiency loop will allow us to save up to 700 MW-hours of electrical energy per year and increase the lifetime of the klystron

Transparent wide band gap crystals follow indirect allowed transition and bipolaron hopping mechanism

Directory of Open Access Journals (Sweden)

Feroz A. Mir

2014-01-01

Full Text Available Recently, we carried out structural, optical and dielectric studies on micro-crystals of Oxypeucedanin (C16H14O5, isolated from the roots of plant Prangos pabularia (Mir et al. (2014 [3,4]. The obtained trend in frequency exponent (s with frequency (ω indicates that the universal dynamic response is followed by this compound. From optical absorption spectroscopy, the optical band gap (Eg was estimated around 3.76 eV and system is showing indirect allowed transition. Using Eg in certain relation of s, a close value of s (as much close obtained by fitting ac conductivity was obtained. This method was further used for other similar systems and again same trend was obtained. So a general conclusion was made that the high transmitting wide band insulators or semiconductors may follow bipolaron hopping transport mechanism.

Development of L-band pillbox RF window

International Nuclear Information System (INIS)

Takeuchi, Y.; Fukuda, S.; Hisamatsu, H.; Saito, Y.; Takahashi, A.

1994-01-01

A pillbox RF output window was developed for the L-band pulsed klystron for the Japanese Hadron Project (JHP) 1-GeV proton linac. The window was designed to withstand a peak RF power of 6 MW, where the pulse width is 600 μsec and the repetition rate is 50 Hz. A high power model was fabricated using an alumina ceramic which has a low loss tangent of 2.5x10 -5 . A high power test was successfully performed up to a 113 kW RF average power with a 4 MW peak power, a 565 μsec pulse width and a 50 Hz repetition rate. By extrapolating the data of this high power test, the temperature rise of the ceramic is estimated low enough at the full RF power of 6 MW. Thus this RF window is expected to satisfy the specifications of the L-band Klystron. (author)

Theoretical aspects of photonic band gap in 1D nano structure of LN: MgLN periodic layer

International Nuclear Information System (INIS)

Sisodia, Namita

2015-01-01

By using the transfer matrix method, we have analyzed the photonic band gap properties in a periodic layer of LN:MgLN medium. The Width of alternate layers of LN and MgLN is in the range of hundred nanometers. The birefringent and ferroelectric properties of the medium (i.e ordinary, extraordinary refractive indices and electric dipole moment) is given due considerations in the formulation of photonic band gap. Effect of electronic transition dipole moment of the medium on photonic band gap is also taken into account. We find that photonic band gap can be modified by the variation in the ratio of the width of two medium. We explain our findings by obtaining numerical values and the effect on the photonic band gap due to variation in the ratio of alternate medium is shown graphically

Pulsed klystrons with feedback controlled mod-anode modulators

Energy Technology Data Exchange (ETDEWEB)

Reass, William A [Los Alamos National Laboratory; Baca, David M [Los Alamos National Laboratory; Jerry, Davis L [Los Alamos National Laboratory; Rees, Daniel E [Los Alamos National Laboratory

2009-01-01

This paper describes a fast rise and fall, totem-pole mod-anode modulators for klystron application. Details of these systems as recently installed utilizing a beam switch tube ''on-deck'' and a planar triode ''off-deck'' in a grid-catch feedback regulated configuration will be provided. The grid-catch configuration regulates the klystron mod-anode voltage at a specified set-point during switching as well as providing a control mechanism that flat-top regulates the klystron beam current during the pulse. This flat-topped klystron beam current is maintained while the capacitor bank droops. In addition, we will review more modern on-deck designs using a high gain, high voltage planar triode as a regulating and switching element. These designs are being developed, tested, and implemented for the Los Alamos Neutron Science Center (LANSCE) accelerator refurbishment project, ''LANSCE-R''. An advantage of the planar triode is that the tube can be directly operated with solid state linear components and provides for a very compact design. The tubes are inexpensive compared to stacked semiconductor switching assemblies and also provide a linear control capability. Details of these designs are provided as well as operational and developmental results.

Photonic-band-gap gyrotron amplifier with picosecond pulses

Science.gov (United States)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; Shapiro, Michael A.; Temkin, Richard J.

2017-12-01

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Correlation functions and susceptibilities of photonics band gap reservoirs

International Nuclear Information System (INIS)

Konopka, M.

1998-01-01

We investigate quantum statistical properties of photonic band gap reservoirs in terms of correlation functions and susceptibilities in time and spectral domains. Typical features are oscillations of the time-dependent correlation functions and susceptibilities. This is because photonic bad gap reservoirs are intrinsically non-Markovian reservoirs. The results help us to understand better how intrinsic quantum-statistical properties of a reservoir influence dynamics of an atom interacting with this reservoir. Boundary conditions influence time and spectral properties of the electromagnetic field. This well-known fact has a great importance in optics and generally in electromagnetism. Specific examples are resonators used in laser technique and cavity electrodynamics. In quantum optics high-Q micro cavities are used for single-atom experiments when an atom can interact in a coherent way with an electromagnetic field which has its mode structure totally different from those in free space. In particular, interaction of an (effectively) two-level atom with a single-mode cavity field was observed in the region of microwaves (with the wavelength about 1 cm). In 1987 Yablonovitch and John independently proposed that certain periodic dielectric structures can present forbidden frequency gaps (or pseudo gaps in partially disordered structures) for transverse modes. Such periodic structures were named 'photonic band structures' or 'photonic crystals', in analogy with electronic crystals which also have a (forbidden) gap for electronic energy. For true photonic crystals the basic property of blocking electromagnetic wave propagation must be fulfilled for all waves within some frequency range, i.e. for all wavevector and polarization directions

Nonlinear Bloch waves in metallic photonic band-gap filaments

Science.gov (United States)

Kaso, Artan; John, Sajeev

2007-11-01

We demonstrate the occurrence of nonlinear Bloch waves in metallic photonic crystals (PCs). These periodically structured filaments are characterized by an isolated optical pass band below an effective plasma gap. The pass band occurs in a frequency range where the metallic filament exhibits a negative, frequency-dependent dielectric function and absorption loss. The metallic losses are counterbalanced by gain in two models of inhomogeneously broadened nonlinear oscillators. In the first model, we consider close-packed quantum dots that fill the void regions of a two-dimensional (2D) metallic PC, and whose inhomogeneously broadened emission spectrum spans the original optical pass band of the bare filament. In the second model, we consider thin (10 50 nm) layers of inhomogeneously broadened two-level resonators, with large dipole oscillator strength, that cover the interior surfaces of 2D metallic (silver and tungsten) PCs. These may arise from localized surface plasmon resonances due to small metal particles or an otherwise rough metal surface. For simplicity, we treat electromagnetic modes with electric field perpendicular to the plane of metal periodicity. In both models, a pumping threshold of the resonators is found, above which periodic nonlinear solutions of Maxwell’s equations with purely real frequency within the optical pass band emerge. These nonlinear Bloch waves exhibit a laserlike input pumping to output amplitude characteristic. For strong surface resonances, these nonlinear waves may play a role in light emission from a hot tungsten (suitably microstructured) filament.

Band gap narrowing and fluorescence properties of nickel doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Arham S; Shafeeq, M Muhamed [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Singla, M L [Central Scientific Instruments Organization (CSIO), Council of Scientific and Industrial Research (CSIR), Materials Research and Bio-Nanotechnology Division, Sector - 30/C, Chandigarh-160030 (India); Tabassum, Sartaj [Department of Chemistry, Aligarh Muslim University, Aligarh-202002 (India); Naqvi, Alim H [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Azam, Ameer [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India)

2011-01-15

Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration (<5%) can be assigned to SnO{sub 2}-SnO{sub 2-x} alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

Band structural properties of MoS2 (molybdenite)

International Nuclear Information System (INIS)

Gupta, V.P.

1980-01-01

Semiconductivity and superconductivity in MoS 2 (molybdenite) can be understood in terms of the band structure of MoS 2 . The band structural properties of MoS 2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)

Anisotropic Effective Mass, Optical Property, and Enhanced Band Gap in BN/Phosphorene/BN Heterostructures.

Science.gov (United States)

Hu, Tao; Hong, Jisang

2015-10-28

Phosphorene is receiving great research interests because of its peculiar physical properties. Nonetheless, the phosphorus has a trouble of degradation due to oxidation. Hereby, we propose that the electrical and optical anisotropic properties can be preserved by encapsulating into hexagonal boron nitride (h-BN). We found that the h-BN contributed to enhancing the band gap of the phosphorene layer. Comparing the band gap of the pristine phosphorene layer, the band gap of the phosphorene/BN(1ML) system was enhanced by 0.15 eV. It was further enhanced by 0.31 eV in the BN(1ML)/phosphorene/BN(1ML) trilayer structure. However, the band gap was not further enhanced when we increased the thickness of the h-BN layers even up to 4 MLs. Interestingly, the anisotropic effective mass and optical property were still preserved in BN/phosphorene/BN heterostructures. Overall, we predict that the capping of phosphorene by the h-BN layers can be an excellent solution to protect the intrinsic properties of the phosphorene.

Design of diode electron gun for 250 kW CW klystron

International Nuclear Information System (INIS)

Prasad, M.; Pande, S.A.; Hannurkar, P.R.

2005-01-01

A 250 kW CW klystron at frequencies 350 MHz and 700 MHz is being developed at Centre for Advanced Technology. These klystrons are required for forthcoming project like 100 MeV proton Linac for Spallation Neutron Source (SNS) as a main rf sources. In order to develop klystrons, we have designed the diode electron gun, which delivers more than 10 A beam current at 50 kV. This paper describes the simulation results of electron gun with computer code EGUN. (author)

Band Gap Changes Of Single Walled Carbon Nanotubes Under Uniaxial Strain

International Nuclear Information System (INIS)

Dereli, G.

2010-01-01

The study of the band gap variation with mechanical deformation is important in manipulations of Single Walled Carbon Nanotubes (SWCNT). In this study we investigated the electronic band structure and the mechanical properties of (12,0) and (13,0) SWCNTs under the effect of uniaxial strain. Electronic and mechanical properties are studied using a parallel, order N, tight-binding molecular dynamics (O(N) TBMD) simulation code designed by G. Dereli et. al. We showed the effect of uniaxial strain on the variations of band gaps and the total energy per atom of (12,0) and (13,0) SWCNTs. We calculated Young's modulus and the Poisson ratio of these SWCNTs. The research reported here was supported through the Yildiz Technical University Research Found Project No: 24-01-01-04. Simulations are performed in parallel environment at Carbon Nanotube Simulation Laboratory of Yildiz Technical University.

High Power Klystrons: Theory and Practice at the Stanford Linear Accelerator CenterPart I

Energy Technology Data Exchange (ETDEWEB)

Caryotakis, G.

2004-12-15

This is Part I of a two-part report on design and manufacturing methods used at SLAC to produce accelerator klystrons. Chapter 1 begins with the history and applications for klystrons, in both of which Stanford University was extensively involved. The remaining chapters review the theory of klystron operation, derive the principal formulae used in their design, and discuss the assumptions that they involve. These formulae are subsequently used in small-signal calculations of the frequency response of a particular klystron, whose performance is also simulated by two different computer codes. The results of calculations and simulations are compared to the actual performance of the klystron.

Clipper circuit of pulse modulator used for klystron-5045 power supply

CERN Document Server

Akimov, A V

2001-01-01

While the operation of modulator to the pulsed transformer of klystron-5045, current through the primary winding of the pulse transformer (PT) continues to flow even upon the end of the klystron voltage operating pulse. This is determined by an energy stored in magnetizing inductance. The prolongation of magnetizing current passing process simultaneously with the premature choking of thyratron can cause high voltage of inverse polarity at the klystron, which cause the destruction of the cathode. We have considered the possibility of shortening time of magnetizing current passage for the charge of reasonable choice of clipper circuit parameters. The behavior of clipper circuit was studied in modulators used for the VEPP-5 (BINP, Russia) preinjector klystron power supply. The optimum operation run of the circuit was selected and its design features are described.

Tunable band gap emission and surface passivation of germanium nanocrystals synthesized in the gas phase

NARCIS (Netherlands)

Wheeler, LM; Levij, L.M.; Kortshagen, U.R.

2013-01-01

The narrow bulk band gap and large exciton Bohr radius of germanium (Ge) make it an attractive material for optoelectronics utilizing band-gap-tunable photoluminescence (PL). However, realization of PL due to quantum confinement remains scarcely reported. Instead, PL is often observed from surface

Band-gap tunable dielectric elastomer filter for low frequency noise

Science.gov (United States)

Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

2016-05-01

In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

Nature of the fundamental band gap in GaNxP1-x alloys

International Nuclear Information System (INIS)

Shan, W.; Walukiewicz, W.; Yu, K. M.; Wu, J.; Ager, J. W. III; Haller, E. E.; Xin, H. P.; Tu, C. W.

2000-01-01

The optical properties of GaN x P 1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN x P 1-x at energy below the indirect Γ V -X C transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaN x P 1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. (c) 2000 American Institute of Physics

Band-engineering of TiO2 as a wide-band gap semiconductor using organic chromophore dyes

Science.gov (United States)

Wahyuningsih, S.; Kartini, I.; Ramelan, A. H.; Saputri, L. N. M. Z.; Munawaroh, H.

2017-07-01

Bond-engineering as applied to semiconductor materials refers to the manipulation of the energy bands in order to control charge transfer processes in a device. When the device in question is a photoelectrochemical cell, the charges affected by drift become the focus of the study. The ideal band gap of semiconductors for enhancement of photocatalyst activity can be lowered to match with visible light absorption and the location of conduction Band (CB) should be raised to meet the reducing capacity. Otherwise, by the addition of the chromofor organic dyes, the wide-band gab can be influences by interacation resulting between TiO2 surface and the dyes. We have done the impruvisation wide-band gap of TiO2 by the addition of organic chromophore dye, and the addition of transition metal dopand. The TiO2 morphology influence the light absorption as well as the surface modification. The organic chromophore dye was syntesized by formation complexes compound of Co(PAR)(SiPA)(PAR)= 4-(2-piridylazoresorcinol), SiPA = Silyl propil amine). The result showed that the chromophore groups adsorbed onto TiO2 surface can increase the visible light absorption of wide-band gab semiconductor. Initial absorption of a chromophore will affect light penetration into the material surfaces. The use of photonic material as a solar cell shows this phenomenon clearly from the IPCE (incident photon to current conversion efficiency) measurement data. Organic chromophore dyes of Co(PAR)(SiPA) exhibited the long wavelength absorption character compared to the N719 dye (from Dyesol).

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Directory of Open Access Journals (Sweden)

Sung Heo

2015-07-01

Full Text Available The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS and high-energy resolution REELS (HR-REELS. HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS energy was located at approximately 4.2 eV above the valence band maximum (VBM and the surface band gap width (EgS was approximately 6.3 eV. The bulk F center (FB energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were FS and FB, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.

Modification of band gaps and optoelectronic properties of binary calcium chalcogenides by means of doping of magnesium atom(s) in rock-salt phase- a first principle based theoretical initiative

Science.gov (United States)

Debnath, Bimal; Sarkar, Utpal; Debbarma, Manish; Bhattacharjee, Rahul; Chattopadhyaya, Surya

2018-02-01

The band gaps and optoelectronic properties of binary calcium chalcogenide semiconductors have been modified theoretically by doping magnesium atom(s) into their respective rock-salt unit cells at some specific concentrations x = 0.0, 0.25, 0.50, 0.75 and 1.0 and confirmed such modifications by studying their structural, electronic and optical properties using DFT based FP-LAPW approach. The WC-GGA functional is used to calculate structural properties, while mBJ, B3LYP and WC-GGA are used for calculating electronic and optical properties. The concentration dependences of lattice parameter, bulk modulus and fundamental band gap for each alloy system exhibit nonlinearity. The atomic and orbital origin of different electronic states in the band structure of each compound are explored from its density of states (DOS). The microscopic origin of band gap bowing for each of the alloy systems is explored in terms of volume deformation, charge exchange and structural relaxation. The chemical bonds between the constituent atoms in each compound are found as ionic in nature. Optical properties of each specimen are calculated from its computed spectra of dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity, optical absorption and energy loss function. Several calculated results have been compared with available experimental and other theoretical data.

The klystron: A microwave source of surprising range and endurance

International Nuclear Information System (INIS)

Caryotakis, G.

1998-04-01

This year marks the 60th anniversary of the birth of the klystron at Stanford University. The tube was the first practical source of microwaves and its invention initiated a search for increasingly more powerful sources, which continues to this day. This paper reviews the scientific uses of the klystron and outlines its operating principles. The history of the device is traced, from its scientific beginnings, to its role in World War II and the Cold War, and to its current resurgence as the key component in a major accelerator project. Finally, the paper describes the development of a modular klystron, which may someday power future accelerators at millimeter wavelengths

Strain sensitivity of band gaps of Sn-containing semiconductors

DEFF Research Database (Denmark)

Li, Hong; Castelli, Ivano Eligio; Thygesen, Kristian Sommer

2015-01-01

Tuning of band gaps of semiconductors is a way to optimize materials for applications within photovoltaics or as photocatalysts. One way to achieve this is through applying strain to the materials. We investigate the effect of strain on a range of Sn-containing semiconductors using density...

Band gaps from the Tran-Blaha modified Becke-Johnson approach: A systematic investigation

Science.gov (United States)

Jiang, Hong

2013-04-01

The semi-local Becke-Johnson (BJ) exchange-correlation potential and its modified form proposed by Tran and Blaha (TB-mBJ) have attracted a lot of interest recently because of the surprisingly accurate band gaps they can deliver for many semiconductors and insulators. In this work, we have investigated the performance of the TB-mBJ potential for the description of electronic band structures in a comprehensive set of semiconductors and insulators. We point out that a perturbative use of the TB-mBJ potential can give overall better results. By investigating a set of IIB-VI and III-V semiconductors, we point out that although the TB-mBJ approach can describe the band gap of these materials quite well, the binding energies of semi-core d-states in these materials deviate strongly from experiment. The difficulty of the TB-mBJ potential to describe the localized states is likely the cause for the fact that the electronic band structures of Cu2O and La2O3 are still poorly described. Based on these observations, we propose to combine the TB-mBJ approach with the Hubbard U correction for localized d/f states, which is able to provide overall good descriptions for both the band gaps and semi-core states binding energies. We further apply the approach to calculate the band gaps of a set of Ti(IV)-oxides, many of which have complicated structures so that the more advanced methods like GW are expensive to treat directly. An overall good agreement with experiment is obtained, which is remarkable considering its little computational efforts compared to GW.

Mechanical Properties of a Library of Low-Band-Gap Polymers

DEFF Research Database (Denmark)

Roth, Bérenger; Savagatrup, Suchol; de los Santos, Nathaniel V.

2016-01-01

The mechanical properties of low-band-gap polymers are important for the long-term survivability of roll to-roll processed organic electronic devices. Such devices, e.g., solar cells, displays, and thin-film transistors, must survive the rigors of roll-to-roll coating and also thermal...... of low-band-gap polymers to better understand the connection between molecular structures and mechanical properties in order to design conjugated polymers that permit mechanical robustness and even extreme deformability. While one of the principal conclusions of these experiments is that the structure...... of an isolated molecule only partially determines the mechanical properties another important codeterminant is the packing structure some general trends can be identified. (1) Fused rings tend to increase the modulus and decrease the ductility. (2) Branched side chains have the opposite effect. Despite...

Observations of Multi-band Structures in Double Star TC-1 PEACE Electron and HIA Ion Data

Science.gov (United States)

Mohan Narasimhan, K.; Fazakerley, A. N.; Grimald, S.; Dandouras, I. S.; Mihaljcic, B.; Kistler, L. M.; Owen, C. J.

2015-12-01

Several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range 1 - 25 keV (Smith and Hoffman (1974), etc). These structures have been described as "nose structures", with reference to their appearance in energy-time spectrograms and are also known as "bands" if they occur for extended periods of time. Multi-nose structures have been observed if 2 or more noses appear at the same time (Vallat et al., 2007). Gaps between "noses" (or "bands") have been explained in terms of the competing corotation, convection and magnetic gradient drifts. Charge exchange losses in slow drift paths for steady state scenarios and the role of substorm injections have also been considered (Li et al., 2000; Ebihara et al., 2004). We analyse observations of electron and ion multi-band structures frequently seen in Double-Star TC1 PEACE and HIA data. We present results from statistical surveys conducted using data from the duration of the mission. Furthermore, using a combination of both statistics and simulations, we test previous theories as to possible formation mechanisms and explore other possible explanations.

Polarization catastrophe in nanostructures doped in photonic band gap materials

Energy Technology Data Exchange (ETDEWEB)

Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)], E-mail: msingh@uwo.ca

2008-11-30

In the presence of the dipole-dipole interaction, we have studied a possible dielectric catastrophe in photonic band gap materials doped with an ensemble of four-level nanoparticles. It is found that the dielectric constant of the system has a singularity when the resonance energy lies within the bands. This phenomenon is known as the dielectric catastrophe. It is also found that this phenomenon depends on the strength of the dipole-dipole interaction.

Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization

International Nuclear Information System (INIS)

Kang, San; Sharma, Rahul; Sim, Jae-Kwan; Lee, Cheul-Ro

2013-01-01

Highlights: ► Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se 2 absorption layers. ► XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ► Optical transmittance and reflectance spectrum are improved towards infrared region. ► The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ► Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV. -- Abstract: Band gap engineering was executed to fabricate a multi-junction stacked i.e. tandem Cu(In,Ga)Se 2 (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction stacked CIS/CIGS/CGS thin films from bottom to top with increasing band gap. Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets. The CIG precursors were converted into CIGS absorption thin film by selenization process. From the X-ray diffraction (XRD) pattern of CIS/CIGS/CGS tandem layer, with the prominent peak shift for (1 1 2) reflections was attributed to the individual CIS, CIGS, and CGS phases at 26.76°, 27.15°, and 27.65° diffraction angles, respectively. The morphologies and atomic (at%) composition uniformity onto the surface and along the depth were extensively analyzed with field effect scanning electron microscope (FESEM) attached energy dispersive spectroscopy (EDS) and secondary ion mass spectroscopy (SIMS). The optical properties such as transmittance, reflectance and absorbance were found to improve in the infrared region for all the tandem CIGS layers. Near the fundamental absorption edge, the absorption coefficient was approached to 10 5 cm −1 for CIS/CIGS/CGS tandem layer. The straight-line behavior indicates that the films have a direct band gap. The band gap was found to increase from 1.15 to 1.74 eV with the Ga-grading along the depth of individual CIS, CIGS, and CGS thin films

Solenoid fringe field compensation for the Cluster Klystron

International Nuclear Information System (INIS)

Wang, H.; Fernow, R.C.; Kirk, H.G.; Palmer, R.B.; Zhao, Y.

1996-04-01

Optimization of the solenoid pancake currents so as to have a uniform axial magnetic field over an extended volume, is very important for the successful operation of the Cluster Klystron. By boosting the first and the last pancake currents by 35%, a uniform field Br/Bz ≤ 0.1% at radius R ≤ 2 cm can be extended from ± 7 cm to ± 16 cm. The result confirms simulations and the requirements for a 3-beam Cluster Klystron Experiment are achieved

Development of High Power Vacuum Tubes for Accelerators and Plasma Heating

International Nuclear Information System (INIS)

Srivastava, Vishnu

2012-01-01

High pulsed power magnetrons and klystrons for medical and industrial accelerators, and high CW power klystrons and gyrotrons for plasma heating in tokamak, are being developed at CEERI. S-band 2.0MW pulsed tunable magnetrons of centre frequency 2856MHz and 2998 MHz were developed, and S-band 2.6MW pulsed tunable magnetron is being developed for medical LINAC, and 3MW pulsed tunable magnetron is being developed for industrial accelerator. S-band (2856MHz), 5MW pulsed klystron was developed for particle accelerator, and S-band 6MW pulsed klystron is under development for 10MeV industrial accelerator. 350MHz, 100kW (CW) klystron is being developed for proton accelerator, and C-band 250kW (CW) klystron is being developed for plasma heating. 42GHz, 200kW (CW/Long pulse) gyrotron is under development for plasma heating. Plasma filled tubes are also being developed for switching. 25kV/1kA and 40kV/3kA thyratrons were developed for high voltage high current switching in pulse modulators for magnetrons and klystrons. 25kV/3kA Pseudospark switch of current rise time of 1kA/|a-sec and pulse repetition rate of 500Hz is being developed. Plasma assisted high power microwave device is also being investigated.

Development of High Power Vacuum Tubes for Accelerators and Plasma Heating

Science.gov (United States)

Srivastava, Vishnu

2012-11-01

High pulsed power magnetrons and klystrons for medical and industrial accelerators, and high CW power klystrons and gyrotrons for plasma heating in tokamak, are being developed at CEERI. S-band 2.0MW pulsed tunable magnetrons of centre frequency 2856MHz and 2998 MHz were developed, and S-band 2.6MW pulsed tunable magnetron is being developed for medical LINAC, and 3MW pulsed tunable magnetron is being developed for industrial accelerator. S-band (2856MHz), 5MW pulsed klystron was developed for particle accelerator, and S-band 6MW pulsed klystron is under development for 10MeV industrial accelerator. 350MHz, 100kW (CW) klystron is being developed for proton accelerator, and C-band 250kW (CW) klystron is being developed for plasma heating. 42GHz, 200kW (CW/Long pulse) gyrotron is under development for plasma heating. Plasma filled tubes are also being developed for switching. 25kV/1kA and 40kV/3kA thyratrons were developed for high voltage high current switching in pulse modulators for magnetrons and klystrons. 25kV/3kA Pseudospark switch of current rise time of 1kA/|a-sec and pulse repetition rate of 500Hz is being developed. Plasma assisted high power microwave device is also being investigated.

Strongly reduced band gap in NiMn2O4 due to cation exchange

International Nuclear Information System (INIS)

Huang, Jhih-Rong; Hsu, Han; Cheng, Ching

2014-01-01

NiMn 2 O 4 is extensively used as a basis material for temperature sensors due to its negative temperature coefficient of resistance (NTCR), which is commonly attributed to the hopping mechanism involving coexisting octahedral-site Mn 4+ and Mn 3+ . Using density-functional theory + Hubbard U calculations, we identify a ferrimagnetic inverse spinel phase as the collinear ground state of NiMn 2 O 4 . By a 12.5% cation exchange, a mixed phase with slightly higher energy can be constructed, accompanied by the formation of an impurity-like band in the original 1 eV band gap. This impurity-like band reduces the gap to 0.35 eV, suggesting a possible source of NTCR. - Highlights: • Density functional based calculations were used to study collinear phase of NiMn 2 O 4 . • The ground-state structure is a ferrimagnetic inverse spinel phase. • The tetrahedral and octahedral Mn cations have ferromagnetic interactions. • A 12.5% cation exchange introduces an impurity-like band in the original 1 eV gap. • The 0.35 eV gap suggests a source of negative temperature coefficient of resistance