WorldWideScience

Sample records for s-band compact electron

  1. A Compact 5 MeV S-Band Electron Linac Based X-Ray Source for Industrial Radiography

    CERN Document Server

    Auditore, Lucrezia; De Pasquale, Domenico; Emanuele, Umberto; Italiano, Antonio; Trifirò, Antonio; Trimarchi, Marina

    2005-01-01

    A compact and reliable X-ray source, based on a 5 MeV, 1 kW, S-band electron linac, has been set up at the Dipartimento di Fisica, Universit\\'a di Messina. This source, coupled with a GOS scintillator screen and a CCD camera, represents an innovative transportable system for industrial radiography and X-ray tomography. Optimization of the parameters influencing the e-gamma conversion and the X-ray beam characteristics have been studied by means of the MCNP-4C2 code. The converter choice is the result of the study of the e-gamma conversion performances for different materials and materials thicknesses. Also the converter position with respect to the linac exit window was studied. The chosen converter consists in a Ta-Cu target inserted close to the linac window. The Cu layer acts as a filter both on the electrons from the source and on the low energy X-rays. The X-ray beam angular profile was studied by means of GafChromic films with and without collimation. In the final source project, a collimation system pr...

  2. Development of the high-power THz spectroscopy and imaging systems on the basis of an S-band compact electron LINAC

    International Nuclear Information System (INIS)

    Kuroda, R.; Taira, Y.; Tanaka, M.; Toyokawa, H.; Yamada, K.; Kumaki, M.; Tachibana, M.; Sakaue, K.; Washio, M.

    2014-01-01

    The high-power terahertz time-domain spectroscopy (THz-TDS) and imaging systems have been developed on the basis of an S-band compact electron linac at AIST. Such high-power THz source is strongly expected for inspection of dangerous materials in the homeland security field. The high-power THz radiations are generated in two methods with the high-brightness ultra-short electron bunch. One is THz coherent synchrotron radiation (THz-CSR) for THz imaging applications. The other is THz coherent transition radiation (THz-CTR) for the THz spectroscopy. The THz-CTR time-domain spectroscopy (TDS) has been constructed with the EO sampling method and demonstrated in freq. range between 0.1-2 THz. The absorption measurements of drug samples have been successfully performed in atmosphere. In this symposium, we will describe details of the THz-CTR-TDS and imaging experiments and a future plan of the THz applications. (author)

  3. S-band linac-based X-ray source with {pi}/2-mode electron linac

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, Abhay, E-mail: abhay@post.kek.jp [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Araki, Sakae [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Dixit, Tanuja [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Fukuda, Masafumi [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Krishnan, R; Pethe, Sanjay [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Sakaue, Kazuyuki [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan); Terunuma, Nobuhiro; Urakawa, Junji [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Washio, Masakazu [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan)

    2011-05-01

    The activities with the compact X-ray source are attracting more attention, particularly for the applications of the source in medical fields. We propose the fabrication of a compact X-ray source using the SAMEER electron linear accelerator and the KEK laser undulator X-ray source (LUCX) technologies. The linac developed at SAMEER is a standing wave side-coupled S-band linac operating in the {pi}/2 mode. In the proposed system, a photocathode RF gun will inject bunches of electrons in the linac to accelerate and achieve a high-energy, low-emittance beam. This beam will then interact with the laser in the laser cavity to produce X-rays of a type well suited for various applications. The side-coupled structure will make the system more compact, and the {pi}/2 mode of operation will enable a high repetition rate operation, which will help to increase the X-ray yield.

  4. S-band and X-band integrated PWT photoelectron linacs

    International Nuclear Information System (INIS)

    Yu, D.; Newsham, D.; Zeng, J.; Rosenzweig, J.

    2001-01-01

    A compact high-energy injector, which has been developed by DULY Research Inc., will have wide scientific, industrial, and medical applications. The new photoelectron injector integrates the photocathode directly into a multicell linear accelerator. By focusing the beam with solenoids or permanent magnets, and producing high current with low emittance, high brightness and low energy spread are achieved. In addition to providing a small footprint and improved beam quality in an integrated structure, the compact system considerably simplifies external subsystems required to operate the photoelectron linac, including rf power transport, beam focusing, vacuum and cooling. The photoelectron linac employs an innovative Plane-Wave-Transformer (PWT) design, which provides strong cell-to-cell coupling, relaxes manufacturing tolerances and facilitates the attachment of external ports to the compact structure with minimal field interference. DULY Research Inc. under the support of the DOE Small Business Innovation Research (SBIR) program, has developed, constructed and installed a 20-MeV, S-band compact electron source at UCLA. Cold test results for this device are presented. DULY Research is also actively engaged in the development of an X-band photoelectron linear accelerator in a SBIR project. When completed, the higher frequency structure will be approximately three times smaller. Design considerations for this device are discussed following the S-band cold test results

  5. The Rapid Formation of Localized Compaction Bands Under Hydrostatic Load Leading to Pore-pressure Transients in Compacting Rocks

    Science.gov (United States)

    Faulkner, D.; Leclere, H.; Bedford, J. D.; Behnsen, J.; Wheeler, J.

    2017-12-01

    Compaction of porous rocks can occur uniformly or within localized deformation bands. The formation of compaction bands and their effects on deformation behaviour are poorly understood. Porosity may be primary and compaction can occur with burial, or it can be produced by metamorphic reactions with a solid volume reduction, that can then undergo collapse. We report results from hydrostatic compaction experiments on porous bassanite (CaSO4.0.5H2O) aggregates. Gypsum (CaSO4.2H2O) is first dehydrated under low effective pressure, 4 MPa, to produce a bassanite aggregate with a porosity of 27%. Compaction is induced by increasing confining pressure at rates from 0.001 MPa/s to 0.02 MPa/s while the sample is maintained at a temperature of 115°C. At slow compaction rates, porosity collapse proceeds smoothly. At higher compaction rates, sudden increases in the pore-fluid pressure occur with a magnitude of 5 MPa. Microstructural investigations using X-ray microtomography and SEM observations show that randomly oriented localized compaction features occur in all samples, where the bulk porosity of 18% outside the band is reduced to 5% inside the band. Previous work on deformation bands has suggested that localized compactive features only form under an elevated differential stress and not under a hydrostatic stress state. The magnitude of the pore-pressure pulses can be explained by the formation of compaction bands. The results indicate that the compaction bands can form by rapid (unstable) propagation across the sample above a critical strain rate, or quasi-statically at low compaction rates without pore-fluid pressure bursts. The absence of pore-fluid pressure bursts at slow compaction rates can be explained by viscous deformation of the bassanite aggregate around the tip of a propagating compaction band, relaxing stress, and promoting stable propagation. Conversely, at higher compaction rates, viscous deformation cannot relax the stress sufficiently and unstable

  6. Ultra-High Gradient S-band Linac for Laboratory and Industrial Applications

    Science.gov (United States)

    Faillace, L.; Agustsson, R.; Dolgashev, V.; Frigola, P.; Murokh, A.; Rosenzweig, J.; Yakimenko, V.

    2010-11-01

    A strong demand for high gradient structures arises from the limited real estate available for linear accelerators. RadiaBeam Technologies is developing a Doubled Energy Compact Accelerator (DECA) structure: an S-band standing wave electron linac designed to operate at accelerating gradients of up to 50 MV/m. In this paper, we present the radio-frequency design of the DECA S-band accelerating structure, operating at 2.856 GHz in the π-mode. The structure design is heavily influenced by NLC collaboration experience with ultra high gradient X-band structures; S-band, however, is chosen to take advantage of commonly available high power S-band klystrons.

  7. Reconstruction of compact diagnostic and therapeutic systems of electron and X-ray

    International Nuclear Information System (INIS)

    Uesaka, Mitsuru

    2003-01-01

    This paper describes the state of the reconstruction study in the title by the Tokyo University in the project (organized by National Institute of Radiological Sciences) by the Ministry of Education, Culture, Sports Science and Technology, toward the development of advanced compact accelerators. The review of the accelerator development from the global aspect concludes that, at present, the medical linacs' are those of S-band, 6 MW Klystron with high energy (-20 Mev) and of X-band (9.3 GHz), 1 MW Magnetron with low energy (-6 Mev). A more compact, hard X-ray source (X-band 11.424 GHz, 2.4 cm wavelength) is proposed by the authors and is under development, where collision of accelerated electron and laser generates the X-ray (33 keV). This enables the volume-size to be reduced to 1/64. Globally, novel, advanced accelerators of C-W band (90 GHz), and laser/plasma (THz) are being developed. Problems in Japanese state of medical physics involving manpower are described together with idea of space-time control of Chemo-radiotherapy' composing from utilization of advanced compact accelerators, control of space and of time. (N.I.)

  8. Bunch monitor for an S-band electron linear accelerator

    International Nuclear Information System (INIS)

    Otake, Yuji; Nakahara, Kazuo

    1991-01-01

    The measurement of bunch characteristics in an S-band electron linear accelerator is required in order to evaluate the quality of accelerated electron beams. A new-type bunch monitor has been developed which combines micro-stripline technology with an air insulator and wall-current monitoring technology. The obtained time resolution of the monitor was more than 150 ps. This result shows that the monitor can handle the bunch number of an S-band linac. The structure of the monitor is suitable for being installed in the vacuum area, since it is constructed of only metal and ceramic parts. It can therefore easily be employed in an actual machine

  9. Advances in X-Band and S-Band Linear Accelerators for Security, NDT, and Other Applications

    CERN Document Server

    Mishin, Andrey V

    2005-01-01

    At AS&E High Energy Systems Division, we designed several new advanced high energy electron beam and X-ray sources. Our primary focus has always been in building the world's most portable commercial X-band accelerators. Today, our X-band systems frequently exceed performance of the similar S-band machines, while they are more portable compared to the latter. The new designs of the X-band accelerators in the most practical energy range from 1 MeV to 6 MeV have been tested delivering outstanding results. Seventy 6 MeV X-band linacs systems have been produced. The most compact linac for security is used by AS&E in a self-shielded, Shaped Energy™ cargo screening system. We pioneered using the X-band linear accelerators for CT, producing high quality images of oil pipes and wood logs. An X-band linear accelerator head on a robotic arm has been used for electron beam radiation curing of an odd-shaped graphite composite part. We developed the broad-range 4 MeV to over 10 MeV energy-regulated X-band ...

  10. Measurement of intense coherent synchrotron radiation at frequencies around 0.1 THz using the compact S-band linac

    International Nuclear Information System (INIS)

    Sei, Norihiro; Kuroda, Ryunosuke; Yasumoto, Masato; Toyokawa, Hiroyuki; Ogawa, Hiroshi; Koike, Masaki; Yamada, Kawakatsu

    2008-01-01

    We measured intense radiation from an electron bunch in a millimeter wave region using the compact S-band linac. The dependence of the radiation on the electron-bunch charge was measured with an rf detector system at frequencies around 0.1 THz and was confirmed to be a coherent synchrotron radiation (CSR). The total power of the horizontally and vertically polarized CSRs, which were extracted through the Z-cut quartz window within 1 ns, was calculated to be about 88 and 30 nJ/pulse, excluding the absorption by the window. The two-dimensional distribution of the vertically polarized CSR was measured at a distance of about 0.7 m from the radiation point. The CSR distribution was comparatively uniform in the horizontal plane. Intense CSR, which was reflected in the vacuum chamber, was extracted with a delay of about 6 ns. This suggests that measurement of temporal structure is needed for CSR applications

  11. Proposal of a novel compact P-band magnetically insulated transmission line oscillator with inclined vanes

    Science.gov (United States)

    Zhang, Xiaoping; Dang, Fangchao; Li, Yangmei; Jin, Zhenxing

    2015-06-01

    In this paper, we present a novel compact P-band magnetically insulated transmission line oscillator (MILO) with specially inclined slow-wave-structure (SWS) vanes to decrease its total dimension and weight. The dispersion characteristics of the inclined SWS are investigated in detail and made comparisons with that of the traditional straight SWS. The results show that the inclined SWS is more advantageous in operating on a steady frequency in a wide voltage range and has a better asymmetric mode segregation and a relatively large band-gap between the TM00 and TM01 modes which are in favor of avoiding the asymmetric and transverse mode competition. Besides, the transverse dimension of the proposed novel inclined SWS with the same operation frequency is decreased by about 50%, and correspondingly the device volume shrinks remarkably to its 0.35 times. In particle-in-cell simulation, the electron bunching spokes are obviously formed in the inclined SWS, and a P-band high-power microwave with a power of 5.8 GW, frequency of 645 MHz, and efficiency of 17.2% is generated by the proposed device, which indicates the feasibility of the compact design with the inclined vanes at the P-band.

  12. Electronic structure of the misfit layer compound (SnS)(1.20)TiS2 : Band structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, CM; deGroot, RA; Wiegers, GA; Haas, C

    1996-01-01

    In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)(1.20)TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

  13. Electronic structure of the misfit layer compound (SnS)1.20TiS2 : band structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.

    1996-01-01

    In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)1.20TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

  14. A Compact Printed Quadruple Band-Notched UWB Antenna

    Directory of Open Access Journals (Sweden)

    Xiaoyin Li

    2013-01-01

    Full Text Available A novel compact coplanar waveguide- (CPW- fed ultrawideband (UWB printed planar volcano-smoke antenna (PVSA with four band-notches for various wireless applications is proposed and demonstrated. The low-profile antenna consists of a C-shaped parasitic strip to generate a notched band at 8.01~8.55 GHz for the ITU band, two C-shaped slots, and an inverted U-shaped slot etched in the radiator patch to create three notched bands at 5.15~5.35 GHz, 5.75~5.85 GHz, and 7.25~7.75 GHz for filtering the WLAN and X-band satellite signals. Simulated and measured results both confirm that the proposed antenna has a broad bandwidth of 3.1~12 GHz with VSWR < 2 and good omnidirectional radiation patterns with four notched-bands.

  15. COMPACT DUAL-BAND INVERTED L SHAPED MONOPOLE ANTENNA FOR WLAN APPLICATIONS

    Directory of Open Access Journals (Sweden)

    K Sumathi

    2015-12-01

    Full Text Available A highly compact and an optimized design of an Inverted L shaped printed monopole antenna with a simple compact ground plane is proposed. To make the designed antenna suitable for implantation it is embedded in FR-4 substrate and is presented. The antenna is designed for dual-band operation at 2.4GHz and 5.2GHz. It is suitable for Wireless Local Area Network (WLAN applications with return loss (S11 < -10dB. The antenna has two different resonant current paths that support two resonances at 2.44GHz and 5.18GHz (forming an F-shaped structure. The size of the antenna is 32.5mm × 19.6mm × 1.6mm. The antenna design is simulated using the tool Advanced Design System (ADS 2014. This antenna design has good return loss and radiation characteristics in both the required frequency bands. The radiation pattern obtained from the proposed antenna is an Omni directional radiation pattern in the E and H plane over the frequency ranges 2.4GHz and 5.2GHz.

  16. Electronic structure of the misfit-layer compound (SnS)1.17NbS2 deduced from band-structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, C.M.; Ettema, A.R.H.F.; Haas, C.; Wiegers, G.A.; Leuken, H. van; Groot, R.A. de

    1995-01-01

    In order to understand the electronic structure of the misfit-layer compound (SnS)1.17NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)1.20NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with

  17. Variable Energy 2-MeV S-Band Linac for X-ray and Other Applications

    International Nuclear Information System (INIS)

    Howard Bender; Dave Schwellenbach; Ron Sturges; Rusty Trainham

    2008-01-01

    We will describe the design and operation of a compact, 2-MeV, S-band linear accelerator (linac) with variable energy tuning and short-pulse operation down to 15 ps with 100-A peak current. The design consists of a buncher cavity for short-pulse operation and two coupled resonator sections for acceleration. Single-pulse operation is accomplished through a fast injector system with a 219-MHz subharmonic buncher. The machine is intended to support a variety of applications, such as X-ray and electron beam diagnostic development and, recently, electron diffraction studies of phase transitions in shocked materials

  18. Variable Energy 2-MeV S-Band Linac for X-ray and Other Applications

    International Nuclear Information System (INIS)

    H. Bender; D. Schwellenbach; R. Sturges; R. Trainham

    2008-01-01

    This paper describes the design and operation of a compact, 2-MeV, S-band linear accelerator (linac) with variable energy tuning and short-pulse operation down to 15 ps with 100-A peak current. The design consists of a buncher cavity for short-pulse operation and two coupled resonator sections for acceleration. Single-pulse operation is accomplished through a fast injector system with a 219-MHz subharmonic buncher. The machine is intended to support a variety of applications, such as x-ray and electron beam diagnostic development, and recently, electron diffraction studies of phase transitions in shocked materials

  19. Compact quadrupole triplet for the S-DALINAC polarized electron injector SPIN

    Energy Technology Data Exchange (ETDEWEB)

    Eckardt, C.; Eichhorn, R.; Enders, J.; Hessler, C.; Poltoratska, Y. [Inst. fuer Kernphysik, Technische Univ. Darmstadt (Germany); Ackermann, W.; Mueller, W.F.O.; Steiner, B.; Weiland, T. [Inst. fuer Theorie Elektromagnetischer Felder, Technische Univ. Darmstadt (Germany)

    2007-07-01

    An ultra compact quadrupole triplet for the S-DALINAC Polarized Electron Injector SPIN has been developed. This development is due to limiting spatial restrictions. Each individual quadrupole has a length of 8 mm, affixed by two 2 mm aluminum plates, resulting in a length of only 12 mm per quadrupole. The gaps between each quadrupole are set to 18 mm, therefore the complete triplet has a total length of only 72 mm. The quadrupole design includes a large aperture, suitable for CF 35 beam pipes. As fringe fields reach far info neighboring yokes, the assembly requires simulation by a beam dynamics tool for optimal weighting of the current excitation. Measurement of the magnetic field distribution is compared to numerical values and the quadrupole strength is calculated. (orig.)

  20. A compact electron gun using field emitter array

    International Nuclear Information System (INIS)

    Asakawa, M.R.; Ikeda, A.; Miyabe, N.; Yamaguchi, S.; Kusaba, M.; Tsunawaki, Y.

    2008-01-01

    A compact electron gun using field emitter array has been developed. With a simple triode configuration consisting of FEA, mid-electrode and anode electrode, the electron gun produces a parallel beam with a diameter of 0.5 mm. This electron gun is applicable for compact radiation sources such as Cherenkov free-electron lasers

  1. A Compact 5.5 GHz Band-Rejected UWB Antenna Using Complementary Split Ring Resonators

    Directory of Open Access Journals (Sweden)

    M. M. Islam

    2014-01-01

    Full Text Available A band-removal property employing microwave frequencies using complementary split ring resonators (CSRRs is applied to design a compact UWB antenna wishing for the rejection of some frequency band, which is meanwhile exercised by the existing wireless applications. The reported antenna comprises optimization of a circular radiating patch, in which slotted complementary SRRs are implanted. It is printed on low dielectric FR4 substrate material fed by a partial ground plane and a microstrip line. Validated results exhibit that the reported antenna shows a wide bandwidth covering from 3.45 to more than 12 GHz, with a compact dimension of 22 × 26 mm2, and VSWR < 2, observing band elimination of 5.5 GHz WLAN band.

  2. A compact 5.5 GHz band-rejected UWB antenna using complementary split ring resonators.

    Science.gov (United States)

    Islam, M M; Faruque, M R I; Islam, M T

    2014-01-01

    A band-removal property employing microwave frequencies using complementary split ring resonators (CSRRs) is applied to design a compact UWB antenna wishing for the rejection of some frequency band, which is meanwhile exercised by the existing wireless applications. The reported antenna comprises optimization of a circular radiating patch, in which slotted complementary SRRs are implanted. It is printed on low dielectric FR4 substrate material fed by a partial ground plane and a microstrip line. Validated results exhibit that the reported antenna shows a wide bandwidth covering from 3.45 to more than 12 GHz, with a compact dimension of 22 × 26 mm(2), and VSWR WLAN band.

  3. A Compact UWB Band-Pass Filter Using Embedded Circular Slot Structures for Improved Upper Stop-band Performance

    DEFF Research Database (Denmark)

    Shen, Ming; Ren, Jian; Mikkelsen, Jan Hvolgaard

    2016-01-01

    structures into the ring resonator. This is different from conventional designs using cascaded bandstop/low-pass filters for stop-band response suppression, which usually leads to big circuit sizes. And hence the proposed approach can reduce the circuit size significantly. A prototype filter with a compact...... size (13.6 mm×6.75 mm) has been implemented for experimental validation. The measured results show a −3 dB frequency band from 3.4 GHz to 11.7 GHz and > 20 dB upper stop-band suppression from 12.5 GHz to 20GHz....

  4. Design of an electron-accelerator-driven compact neutron source for non-destructive assay

    Science.gov (United States)

    Murata, A.; Ikeda, S.; Hayashizaki, N.

    2017-09-01

    The threat of nuclear and radiological terrorism remains one of the greatest challenges to international security, and the threat is constantly evolving. In order to prevent nuclear terrorism, it is important to avoid unlawful import of nuclear materials, such as uranium and plutonium. Development of technologies for non-destructive measurement, detection and recognition of nuclear materials is essential for control at national borders. At Tokyo Institute of Technology, a compact neutron source system driven by an electron-accelerator has been designed for non-destructive assay (NDA). This system is composed of a combination of an S-band (2.856 GHz) RF-gun, a tungsten target to produce photons by bremsstrahlung, a beryllium target, which is suitable for use in generating neutrons because of the low threshold energy of photonuclear reactions, and a moderator to thermalize the fast neutrons. The advantage of this system can accelerate a short pulse beam with a pulse width less than 1 μs which is difficult to produce by neutron generators. The amounts of photons and neutron produced by electron beams were simulated using the Monte Carlo simulation code PHITS 2.82. When the RF-gun is operated with an average electron beam current of 0.1 mA, it is expected that the neutron intensities are 1.19 × 109 n/s and 9.94 × 109 n/s for incident electron beam energies of 5 MeV and 10 MeV, respectively.

  5. S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

    International Nuclear Information System (INIS)

    Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

    2005-01-01

    S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

  6. Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

    International Nuclear Information System (INIS)

    Takeda, Hiroyuki; Yoshino, Katsumi

    2004-01-01

    We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

  7. Compact two-beam push-pull free electron laser

    Science.gov (United States)

    Hutton, Andrew [Yorktown, VA

    2009-03-03

    An ultra-compact free electron laser comprising a pair of opposed superconducting cavities that produce identical electron beams moving in opposite directions such that each set of superconducting cavities accelerates one electron beam and decelerates the other electron beam. Such an arrangement, allows the energy used to accelerate one beam to be recovered and used again to accelerate the second beam, thus, each electron beam is decelerated by a different structure than that which accelerated it so that energy exchange rather than recovery is achieved resulting in a more compact and highly efficient apparatus.

  8. The electronic band parameters calculated by the Kronig-Penney method for Cd1-xZnxS quantum dot superlattices

    International Nuclear Information System (INIS)

    Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben

    2009-01-01

    This work reports on a theoretical study of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. We show, in particular, how this system can be assumed to a series of flattened cylindrical quantum dots with a finite barrier height at the boundary. In this paper, are also reviewed the approximations needed to calculate the band edges of the Cd 1-x Zn x S superlattices with use of the Kronig-Penney model. The electronic states and the electron effective masses of both Γ 1 - and Γ 2 -minibands have been computed as a function of zinc composition for different inter-quantum dot separations. As is found, the CdS system is appropriate to give rise a superlattice behavior for conduction electrons in a relatively large range of inter-sheet separations. An attempt to explain the electron band parameters calculated will be presented.

  9. Compact Triple-Band Antenna Employing Simplified MTLs for Wireless Applications

    Directory of Open Access Journals (Sweden)

    Zhangjing Wang

    2016-01-01

    Full Text Available A compact triple-band asymmetric coplanar waveguide- (ACPW- fed antenna based on simplified metamaterial transmission lines (SMTLs is proposed in this paper. The antenna consists of two SMTL unit cells of the same dimension. Three operating bands, which cover UMTS in the 1.76 GHz band and WLAN in the 5.2 GHz and 5.8 GHz, are achieved when the zeroth-order and first-positive-order modes appear. The characteristics of the proposed transmission line metamaterial structure are studied in detail by circuit analysis and dispersion analysis. The working mechanism and radiation performances of the antenna are examined and illustrated at the three operating bands, respectively. A prototype designed on FR4 substrate with dielectric constant 4.3 occupies an overall size of 12.55 × 22.7 × 1.6 mm3 and is constructed and successfully measured.

  10. A Compact CPW-Fed UWB Antenna with Dual Band-Notched Characteristics

    Directory of Open Access Journals (Sweden)

    Aiting Wu

    2013-01-01

    Full Text Available A compact CPW-fed planar UWB antenna with dual band-notched property is presented. The dual band rejection is achieved by etching a C-shaped slot on the radiation patch and two L-shaped parasitic strips in the ground plane. The experimental and measured results show that the proposed antenna exhibits an impedance bandwidth over an ultrawideband frequency range from 2.4 to 12.5 GHz with VSWR less than 2, except for two stopbands at 3.3 to 3.75 GHz and 5.07 to 5.83 GHz for filtering the WiMAX and WLAN signals, respectively. It also demonstrates a nearly omnidirectional radiation pattern. The fabricated antenna has a tiny size, only 32 mm × 32 mm × 0.508 mm. The simulated results are compared with the measured performance and show good agreement. The simple structure, compact size, and good characteristics make the proposed antenna an excellent candidate for UWB applications.

  11. Compact Dual-Band Bandpass Filter Using Stubs Loaded Ring Resonator

    Science.gov (United States)

    Xu, Jin

    2016-01-01

    This paper presents a novel second-order dual-band bandpass filter (BPF) by using proposed stubs loaded ring resonator. The resonant behavior of proposed stubs loaded ring resonator is analyzed by even-/odd-mode method, which shows its multiple-mode resonant characteristic. Parameters sweep is done so as to give the design guidelines. As an example, a second-order dual-band BPF operating at 1.8/5.2 GHz for GSM and WLAN applications is designed, fabricated and measured. The fabricated filter has a very compact size of 0.05λg×0.15λg. Measured results also show that the proposed dual-band BPF has a better than 20 dB rejection upper stopband from 5.47 GHz to 12.56 GHz. Good agreement is shown between the simulated and measured results.

  12. Electron correlations in narrow band systems

    International Nuclear Information System (INIS)

    Kishore, R.

    1983-01-01

    The effect of the electron correlations in narrow bands, such as d(f) bands in the transition (rare earth) metals and their compounds and the impurity bands in doped semiconductors is studied. The narrow band systems is described, by the Hubbard Hamiltonian. By proposing a local self-energy for the interacting electron, it is found that the results are exact in both atomic and band limits and reduce to the Hartree Fock results for U/Δ → 0, where U is the intra-atomic Coulomb interaction and Δ is the bandwidth of the noninteracting electrons. For the Lorentzian form of the density of states of the noninteracting electrons, this approximation turns out to be equivalent to the third Hubbard approximation. A simple argument, based on the mean free path obtained from the imaginary part of the self energy, shows how the electron correlations can give rise to a discontinous metal-nonmetal transition as proposed by Mott. The band narrowing and the existence of the satellite below the Fermi energy in Ni, found in photoemission experiments, can also be understood. (Author) [pt

  13. A Very Compact and Low Profile UWB Planar Antenna with WLAN Band Rejection.

    Science.gov (United States)

    Syed, Avez; Aldhaheri, Rabah W

    2016-01-01

    A low-cost coplanar waveguide fed compact ultrawideband (UWB) antenna with band rejection characteristics for wireless local area network (WLAN) is proposed. The notch band characteristic is achieved by etching half wavelength C-shaped annular ring slot in the radiating patch. By properly choosing the radius and position of the slot, the notch band can be adjusted and controlled. With an overall size of 18.7 mm × 17.6 mm, the antenna turns out to be one of the smallest UWB antennas with band-notched characteristics. It has a wide fractional bandwidth of 130% (2.9-13.7 GHz) with VSWR applications.

  14. Ka-band Technologies for Small Spacecraft Communications via Relays and Direct Data Downlink

    Science.gov (United States)

    Budinger, James M.; Niederhaus, Charles; Reinhart, Richard; Downey, Joe; Roberts, Anthony

    2016-01-01

    As the scientific capabilities and number of small spacecraft missions in the near Earth region increase, standard yet configurable user spacecraft terminals operating in Ka-band are needed to lower mission cost and risk and enable significantly higher data return than current UHF or S-band terminals. These compact Ka-band terminals are intended to operate with both the current and next generation of Ka-band relay satellites and via direct data communications with near Earth tracking terminals. This presentation provides an overview of emerging NASA-sponsored and commercially provided technologies in software defined radios (SDRs), transceivers, and electronically steered antennas that will enable data rates from hundreds of kbps to over 1 Gbps and operate in multiple frequency bands (such as S- and X-bands) and expand the use of NASA's common Ka-bands frequencies: 22.55-23.15 GHz for forward data or uplink; and 25.5-27.0 GHz for return data or downlink. Reductions in mass, power and volume come from integration of multiple radio functions, operations in Ka-band, high efficiency amplifiers and receivers, and compact, flat and vibration free electronically steered narrow beam antennas for up to + 60 degrees field of regard. The software defined near Earth space transceiver (SD-NEST) described in the presentation is intended to be compliant with NASA's space telecommunications radio system (STRS) standard for communications waveforms and hardware interoperability.

  15. Optical and electronic properties of 2 H -Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

    Science.gov (United States)

    Brotons-Gisbert, Mauro; Segura, Alfredo; Robles, Roberto; Canadell, Enric; Ordejón, Pablo; Sánchez-Royo, Juan F.

    2018-05-01

    Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk 2 H -Mo S2 hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of A and B excitons under high pressure, by means of absorption measurements and density-functional-theory calculations. These results raise an unusual situation in which bright and dark exciton degeneracy is naturally broken in a centrosymmetric material. Additionally, the phonon-assisted scattering process of excitons has been studied by analyzing the pressure dependence of the linewidth of discrete excitons observed at the absorption coefficient edge of 2 H -Mo S2 . Also, the pressure dependence of the indirect optical transitions of bulk 2 H -Mo S2 has been analyzed by absorption measurements and density-functional-theory calculations. These results reflect a progressive closure of the indirect band gap as pressure increases, indicating that metallization of bulk Mo S2 may occur at pressures higher than 26 GPa.

  16. Adjustment of Conduction Band Edge of Compact TiO2 Layer in Perovskite Solar Cells Through TiCl4 Treatment.

    Science.gov (United States)

    Murakami, Takurou N; Miyadera, Tetsuhiko; Funaki, Takashi; Cojocaru, Ludmila; Kazaoui, Said; Chikamatsu, Masayuki; Segawa, Hiroshi

    2017-10-25

    Perovskite solar cells (PSCs) without a mesoporous TiO 2 layer, that is, planar-type PSCs exhibit poorer cell performance as compared to PSCs with a porous TiO 2 layer, owing to inefficient electron transfer from the perovskite layer to the compact TiO 2 layer in the former case. The matching of the conduction band levels of perovskite and the compact TiO 2 layer is thus essential for enhancing PSC performance. In this study, we demonstrate the shifting of the conduction band edge (CBE) of the compact TiO 2 layer through a TiCl 4 treatment, with the aim of improving PSC performance. The CBE of the compact TiO 2 layer was shifted to a higher level through the TiCl 4 treatment and then shifted in the opposite direction, that is, to a lower level, through a subsequent heat treatment. These shifts in the CBE were reflected in the PSC performance. The TiCl 4 -treated PSC showed an increase in the open-circuit voltage of more than 150 mV, as well as a decrease of 100 mV after being heated at 450 °C. On the other hand, the short-circuit current decreased after the treatment but increased after heating at temperatures higher than 300 °C. The treated PSC subjected to subsequent heating at 300 °C exhibited the best performance, with the power conversion efficiency of the PSC being 17% under optimized conditions.

  17. Development of an S-band cavity-type beam position monitor for a high power THz free-electron laser

    Energy Technology Data Exchange (ETDEWEB)

    Noh, Seon Yeong; Kim, Eun-San, E-mail: eskim1@knu.ac.kr; Hwang, Ji-Gwang; Heo, A.; Won, Jang Si [Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Vinokurov, Nikolay A.; Jeong, Young UK, E-mail: yujung@kaeri.re.kr; Hee Park, Seong; Jang, Kyu-Ha [WCI Center for Quantum-Beam-based Radiation Research, Korea Atomic Energy Research Institute, 989-111 Daedeok-Daero, Yuseong-gu, Daejeon (Korea, Republic of)

    2015-01-15

    A cavity-type beam position monitor (BPM) has been developed for a compact terahertz (THz) free-electron laser (FEL) system and ultra-short pulsed electron Linac system at the Korea Atomic Energy Research Institute (KAERI). Compared with other types of BPMs, the cavity-type BPM has higher sensitivity and faster response time even at low charge levels. When electron beam passes through the cavity-type BPM, it excites the dipole mode of the cavity of which amplitude depends linearly on the beam offset from the center of the cavity. Signals from the BPM were measured as a function of the beam offset by using an oscilloscope. The microtron accelerator for the KAERI THz FEL produces the electron beam with an energy of 6.5 MeV and pulse length of 5 μs with a micropulse of 10-20 ps at the frequency of 2.801 GHz. The macropulse beam current is 40 mA. Because the microtron provides multi-bunch system, output signal would be the superposition of each single bunch. So high output signal can be obtained from superposition of each single bunch. The designed position resolution of the cavity-type BPM in multi-bunch is submicron. Our cavity-type BPM is made of aluminum and vacuum can be maintained by indium sealing without brazing process, resulting in easy modification and cost saving. The resonance frequency of the cavity-type BPM is 2.803 GHz and the cavity-type BPM dimensions are 200 × 220 mm (length × height) with a pipe diameter of 38 mm. The measured position sensitivity was 6.19 (mV/mm)/mA and the measured isolation between the X and Y axis was −39 dB. By measuring the thermal noise of system, position resolution of the cavity-type BPM was estimated to be less than 1 μm. In this article, we present the test results of the S-band cavity-type BPM and prove the feasibility of the beam position measurement with high resolution using this device.

  18. Development of an S-band cavity-type beam position monitor for a high power THz free-electron laser

    Science.gov (United States)

    Noh, Seon Yeong; Kim, Eun-San; Hwang, Ji-Gwang; Heo, A.; won Jang, Si; Vinokurov, Nikolay A.; Jeong, Young UK; Hee Park, Seong; Jang, Kyu-Ha

    2015-01-01

    A cavity-type beam position monitor (BPM) has been developed for a compact terahertz (THz) free-electron laser (FEL) system and ultra-short pulsed electron Linac system at the Korea Atomic Energy Research Institute (KAERI). Compared with other types of BPMs, the cavity-type BPM has higher sensitivity and faster response time even at low charge levels. When electron beam passes through the cavity-type BPM, it excites the dipole mode of the cavity of which amplitude depends linearly on the beam offset from the center of the cavity. Signals from the BPM were measured as a function of the beam offset by using an oscilloscope. The microtron accelerator for the KAERI THz FEL produces the electron beam with an energy of 6.5 MeV and pulse length of 5 μs with a micropulse of 10-20 ps at the frequency of 2.801 GHz. The macropulse beam current is 40 mA. Because the microtron provides multi-bunch system, output signal would be the superposition of each single bunch. So high output signal can be obtained from superposition of each single bunch. The designed position resolution of the cavity-type BPM in multi-bunch is submicron. Our cavity-type BPM is made of aluminum and vacuum can be maintained by indium sealing without brazing process, resulting in easy modification and cost saving. The resonance frequency of the cavity-type BPM is 2.803 GHz and the cavity-type BPM dimensions are 200 × 220 mm (length × height) with a pipe diameter of 38 mm. The measured position sensitivity was 6.19 (mV/mm)/mA and the measured isolation between the X and Y axis was -39 dB. By measuring the thermal noise of system, position resolution of the cavity-type BPM was estimated to be less than 1 μm. In this article, we present the test results of the S-band cavity-type BPM and prove the feasibility of the beam position measurement with high resolution using this device.

  19. C-band RF-system development for e{sup +}e{sup -} linear collider

    Energy Technology Data Exchange (ETDEWEB)

    Shintake, T.; Akasaka, N.; Matsumoto, H. [High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Oh, J.S.; Yoshida, M.; Watanabe, K.; Ohkubo, Y.; Yonezawa, H.; Baba, H.

    1998-11-01

    Hardware R and D on the C-band (5712 MHz) RF-system for an electron/positron linear collider started in 1996 at KEK. During two years R and D, we have developed a 50-MW C-band klystron (TOSHIBA E3746), a 'Smart Modulator', a traveling-wave resonator (TWR) and a cold model of the rf-pulse compressor. A C-band accelerating structure, which uses the choke-mode cavity, is under development. Its HOM damping performance will be tested using short-bunch beams of ASSET beam-line at SLAC in this year. The C-band system is able to accelerate a high-current beam at an accelerating gradient higher than that in a conventional S-band system, therefore, there will be various applications in the future beside the linear collider. For example, we can build an injector for a SR-ring and for various physics experiments within a short site-length. Additionally, since the C-band components are compact, it has a big potentiality to be widely used in various medical and industrial applications, such as an electron-beam radiotherapy machine, or a compact non-destructive X-ray imaging system. (author)

  20. Electronic band structure study of colossal magnetoresistance in Tl 2Mn 2O 7

    Science.gov (United States)

    Seo, D.-K.; Whangbo, M.-H.; Subramanian, M. A.

    1997-02-01

    The electronic structure of Tl 2Mn 2O 7 was examined by performing tight binding band calculations. The overlap between the Mn t 2g- and Tl 6 s-block bands results in a partial filling of the Tl 6 s-block bands. The associated Fermi surface consists of 12 cigar-shape electron pockets with each electron pocket about {1}/{1000} of the first Brillouin zone in size. The Tl 6 s-block bands have orbital contributions from the Mn atoms, and the carrier density is very low. These are important for the occurrence of a colossal magnetoresistance in Tl 2Mn 2O 7.

  1. High-power test of S-band klystron for long-pulse operation

    International Nuclear Information System (INIS)

    Morii, Y.; Oshita, E.; Abe, S.; Keishi, T.; Tomimasu, T.; Ohkubo, Y.; Yoshinao, M.; Yonezawa, H.

    1994-01-01

    FELI(Free Electron Laser Research Institute, Inc.) is constructing a free electron laser facility covering from 20μm (infra red region) to 0.35μm (ultra violet region), using an S-band linac. The linac is commissioning now. An RF system of the linac for FELs is required of long pulse duration and high stability. S-band klystrons (TOSHIBA E3729) of the FELI linac are operated in three pulse operation modes (pulse width and peak RF power; 24μs-24MW, 12.5μs-34MW, 0.5μs-70MW). The S-band klystron and its modulator were combined to test their performance. The high power test results of the S-band klystron are summarized in this paper. (author)

  2. Compact Dual-Band Dipole Antenna with Asymmetric Arms for WLAN Applications

    Directory of Open Access Journals (Sweden)

    Chung-Hsiu Chiu

    2014-01-01

    Full Text Available A dual-band dipole antenna that consists of a horn- and a C-shaped metallic arm is presented. Depending on the asymmetric arms, the antenna provides two −10 dB impedance bandwidths of 225 MHz (about 9.2% at 2.45 GHz and 1190 MHz (about 21.6% at 5.5 GHz, respectively. This feature enables it to cover the required bandwidths for wireless local area network (WLAN operation at the 2.4 GHz band and 5.2/5.8 GHz bands for IEEE 802.11 a/b/g standards. More importantly, the compact size (7 mm × 24 mm and good radiating performance of the antenna are profitable to be integrated with wireless communication devices on restricted RF-elements spaces.

  3. Design of an S band narrow-band bandpass BAW filter

    Science.gov (United States)

    Gao, Yang; Zhao, Kun-li; Han, Chao

    2017-11-01

    An S band narrowband bandpass filter BAW with center frequency 2.460 GHz, bandwidth 41MHz, band insertion loss - 1.154 dB, the passband ripple 0.9 dB, the out of band rejection about -42.5dB@2.385 GHz; -45.5dB@2.506 GHz was designed for potential UAV measurement and control applications. According to the design specifications, the design is as follows: each FBAR's stack was designed in BAW filter by using Mason model. Each FBAR's shape was designed with the method of apodization electrode. The layout of BAW filter was designed. The acoustic-electromagnetic cosimulation model was built to validate the performance of the designed BAW filter. The presented design procedure is a common one, and there are two characteristics: 1) an A and EM co-simulation method is used for the final BAW filter performance validation in the design stage, thus ensures over-optimistic designs by the bare 1D Mason model are found and rejected in time; 2) An in-house developed auto-layout method is used to get compact BAW filter layout, which simplifies iterative error-and-try work here and output necessary in-plane geometry information to the A and EM cosimulation model.

  4. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    Science.gov (United States)

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-13

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  5. Compact multi-band frequency reconfigurable planar monopole antenna for several wireless communication applications

    Directory of Open Access Journals (Sweden)

    M. Abou Al-Alaa

    2014-05-01

    Full Text Available A compact reconfigurable multi-band monopole antenna is presented. To achieve frequency reconfigurability, a PIN diode is used. There are two states of switch. State 1: when the switch is OFF, the antenna operates at four bands: 2.45, 3, 3.69, and 5.5 GHz with impedance bandwidth of 9.95, 5.96, 12.57, and 10.76%, respectively. State 2: when a switch is ON, the antenna operates at 2.64, 3.67, 4.94, and 5.3 GHz with impedance bandwidth of 21.15, 11.76, 5.79, and 4.12%, respectively. Folded and meandered techniques are used for miniaturize antenna size. Antenna size is 15 mm × 37 mm × 0.8 mm and the radiator part is 15 mm × 9 mm × 0.8 mm. The proposed antenna is used in several applications such as Bluetooth (2400–2484 MHz, WLAN [802.11b/g/n (2.4–2.48 GHz, 802.11y (3.657–3.69 GHz, 802.11y (4.9 GHz, 802.11a/h/j/n (5.2 GHz], Wi-MAX (2.5–2.69 GHz, LTE (band 7, band 38, band 41, and band 43 and S-DMB (2605–2655 MHz. The antenna is analyzed using the transient solver of CST Microwave Studio. The proposed antenna was fabricated and tested. Measurements and simulations show good agreement.

  6. A Compact Narrow-Band Bandstop Filter Using Spiral-Shaped Defected Microstrip Structure

    Directory of Open Access Journals (Sweden)

    J. Wang

    2014-04-01

    Full Text Available A novel compact narrow-band bandstop filter is implemented by using the proposed spiral-shaped defected microstrip structure (SDMS in this paper. Compared with other DMSs, the presented SDMS exhibits the advantage of compact size and narrow stopband. Meanwhile, an approximate design rule of the SDMS is achieved and the effects of the dimensions on the resonant frequency and 3 dB fractional bandwidth (FBW are analyzed in detail. Both the simulation and measurement results of the fabricated bandstop filter show that it has a 10 dB stopband from 3.4 GHz to 3.6 GHz with more than 45 dB rejection at the center frequency.

  7. Band structural properties of MoS2 (molybdenite)

    International Nuclear Information System (INIS)

    Gupta, V.P.

    1980-01-01

    Semiconductivity and superconductivity in MoS 2 (molybdenite) can be understood in terms of the band structure of MoS 2 . The band structural properties of MoS 2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)

  8. Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

    Science.gov (United States)

    Henck, Hugo; Ben Aziza, Zeineb; Pierucci, Debora; Laourine, Feriel; Reale, Francesco; Palczynski, Pawel; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fèvre, Patrick; Lhuillier, Emmanuel; Wakamura, Taro; Mattevi, Cecilia; Rault, Julien E.; Calandra, Matteo; Ouerghi, Abdelkarim

    2018-04-01

    Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides (TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single-layer W S2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements, and density functional theory (DFT) calculations. The results show good electronic properties as well as a well-defined band arising from the strong splitting of the single-layer W S2 valence band at the K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single-layer W S2 . Our results provide an important reference for future studies of electronic properties of W S2 and its applications in valleytronic devices.

  9. Performance of a 150-MW S-band klystron

    International Nuclear Information System (INIS)

    Sprehn, D.; Phillips, R.M.; Caryotakis, G.

    1994-09-01

    As part of an international collaboration, the Stanford Linear Accelerator Center (SLAC) klystron group has designed, fabricated, and tested a 60-Hz, 3-μs, 150-MW S-band klystron built for Deutsches Elektronen Synchrotron (DESY). A test diode with a 535-kV, 700-A electron beam was constructed to verify the gun operation. The first klystron was built and successfully met design specifications. The 375-MW electron beam represents a new record for SLAC accelerator klystrons in terms of voltage, current, energy, and ruggedness of design. The rf output power is a 150% increase over the S-band tubes currently used in the two-mile-long linear accelerator at SLAC. This paper discusses design issues and experimental results of the diode and klystron

  10. Analysis of a Compact Wideband Slotted Antenna for Ku Band Applications

    Directory of Open Access Journals (Sweden)

    M. R. Ahsan

    2014-01-01

    Full Text Available The design procedure and physical module of a compact wideband patch antenna for Ku band application are presented in this paper. Finite element method based on 3D electromagnetic field solver has been utilized for the designing and analyzing process of proposed microstrip line fed modified E-H shaped electrically small patch antenna. After successful completion of the design process through various simulations, the proposed antenna has been fabricated on printed circuit board (PCB and its characteristics have been studied. The parameters of the proposed antenna prototype have been measured in standard far-field rectangular shape anechoic measurement compartment. It is apparent from the measured antenna parameters that the proposed antenna achieved almost stable variation of radiation pattern over the entire operational band with 1380 MHz of -10 dB return loss bandwidth. The maximum gain of 7.8 dBi and 89.97% average efficiency within the operating band from 17.15 GHz to 18.53 GHz ensure the suitability of the proposed antenna for Ku band applications.

  11. Compaction bands in shale revealed through digital volume correlation of time-resolved X-ray tomography scans

    Science.gov (United States)

    McBeck, J.; Kobchenko, M.; Hall, S.; Tudisco, E.; Cordonnier, B.; Renard, F.

    2017-12-01

    Previous studies have identified compaction bands primarily within sandstones, and in fewer instances, within other porous rocks and sediments. Using Digital Volume Correlation (DVC) of X-ray microtomography scans, we find evidence of localized zones of high axial contraction that form tabular structures sub-perpendicular to maximum compression, σ1, in Green River shale. To capture in situ strain localization throughout loading, two shale cores were deformed in the HADES triaxial deformation apparatus installed on the X-ray microtomography beamline ID19 at the European Synchrotron Radiation Facility. In these experiments, we increase σ1 in increments of two MPa, with constant confining pressure (20 MPa), until the sample fails in macroscopic shear. After each stress step, a 3D image of the sample inside the rig is acquired at a voxel resolution of 6.5 μm. The evolution of lower density regions within 3D reconstructions of linear attenuation coefficients reveal the development of fractures that fail with some opening. If a fracture produces negligible dilation, it may remain undetected in image segmentation of the reconstructions. We use the DVC software TomoWarp2 to identify undetected fractures and capture the 3D incremental displacement field between each successive pair of microtomography scans acquired in each experiment. The corresponding strain fields reveal localized bands of high axial contraction that host minimal shear strain, and thus match the kinematic definition of compaction bands. The bands develop sub-perpendicular to σ1 in the two samples in which pre-existing bedding laminations were oriented parallel and perpendicular to σ1. As the shales deform plastically toward macroscopic shear failure, the number of bands and axial contraction within the bands increase, while the spacing between the bands decreases. Compaction band development accelerates the rate of overall axial contraction, increasing the mean axial contraction throughout the sample

  12. Compact Front-end Prototype for Next Generation RFI-rejecting Polarimetric L-band Radiometer

    DEFF Research Database (Denmark)

    Jensen, Brian Sveistrup; Søbjærg, Sten Schmidl; Skou, Niels

    2009-01-01

    Realizing the need for lower noise figure and smaller physical size in todays higly sensitive radiometers, this paper presents a new compact analog front-end (AFE) for use with the existing L-band (1400-1427 MHz) radiometer designed and operated by the Technical University of Denmark. Using subha...

  13. Compact high-current, subnanosecond electron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Shpak, V G; Shunajlov, S A; Ulmaskulov, M R; Yalandin, M I [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics; Pegel, I V [Russian Academy of Sciences, Tomsk (Russian Federation). High-Current Electronics Inst.; Tarakanov, V P [Russian Academy of Sciences, Moscow (Russian Federation). High-Temperature Inst.

    1997-12-31

    A compact subnanosecond, high-current electron accelerator producing an annular electron beam of duration up to 300 - 400 ps, energy about 250 keV, and current up to 1 kA has been developed to study transient processes in pulsed power microwave devices. The measuring and recording techniques used to experimentally investigate the dynamics of the beam current pulse and the transformation of the electron energy during the transportation of the beam in a longitudinal magnetic field are described. The experimental data obtained are compared with the predictions of a numerical simulation. (author). 6 figs., 5 refs.

  14. A Codesigned Compact Dual-Band Filtering Antenna with PIN Loaded for WLAN Applications

    Directory of Open Access Journals (Sweden)

    Shanxiong Chen

    2014-01-01

    Full Text Available A codesigned compact dual-band filtering antenna incorporating a PIN diode for 2.45/5.2 GHz wireless local area network (WLAN applications is proposed in this paper. The integrated filtering antenna system consists of a simple monopole radiator, a microstrip dual-band band-pass filter, and a PIN diode. The performance of the filtering antenna is notably promoted by optimizing the impedance between the antenna and the band-pass filter, with good selectivity and out-of-band rejection. The design process follows the approach of the synthesis of band-pass filter. In addition, the PIN diode is incorporated in the filtering antenna for further size reduction, which also widens the coverage of the bandwidth by about 230% for 2.4 GHz WLAN. With the presence of small size and good filtering performances, the proposed filtering antenna is a good candidate for the wireless communication systems. Prototypes of the proposed filtering antenna incorporating a PIN diode are fabricated and measured. The measured results including return losses and radiation patterns are presented.

  15. Band Alignment Determination of Two-Dimensional Heterojunctions and Their Electronic Applications

    KAUST Repository

    Chiu, Ming-Hui

    2018-05-09

    Two-dimensional (2D) layered materials such as MoS2 have been recognized as high on-off ratio semiconductors which are promising candidates for electronic and optoelectronic devices. In addition to the use of individual 2D materials, the accelerated field of 2D heterostructures enables even greater functionalities. Device designs differ, and they are strongly controlled by the electronic band alignment. For example, photovoltaic cells require type II heterostructures for light harvesting, and light-emitting diodes benefit from multiple quantum wells with the type I band alignment for high emission efficiency. The vertical tunneling field-effect transistor for next-generation electronics depends on nearly broken-gap band alignment for boosting its performance. To tailor these 2D layered materials toward possible future applications, the understanding of 2D heterostructure band alignment becomes critically important. In the first part of this thesis, we discuss the band alignment of 2D heterostructures. To do so, we firstly study the interlayer coupling between two dissimilar 2D materials. We conclude that a post-anneal process could enhance the interlayer coupling of as-transferred 2D heterostructures, and heterostructural stacking imposes similar symmetry changes as homostructural stacking. Later, we precisely determine the quasi particle bandgap and band alignment of the MoS2/WSe2 heterostructure by using scan tunneling microscopy/spectroscopy (STM/S) and micron-beam X-ray photoelectron spectroscopy (μ-XPS) techniques. Lastly, we prove that the band alignment of 2D heterojunctions can be accurately predicted by Anderson’s model, which has previously failed to predict conventional bulk heterostructures. In the second part of this thesis, we develop a new Chemical Vapor Deposition (CVD) method capable of precisely controlling the growth area of p- and n-type transition metal dichalcogenides (TMDCs) and further form lateral or vertical 2D heterostructures. This

  16. Compact femtosecond electron diffractometer with 100 keV electron bunches approaching the single-electron pulse duration limit

    International Nuclear Information System (INIS)

    Waldecker, Lutz; Bertoni, Roman; Ernstorfer, Ralph

    2015-01-01

    We present the design and implementation of a highly compact femtosecond electron diffractometer working at electron energies up to 100 keV. We use a multi-body particle tracing code to simulate electron bunch propagation through the setup and to calculate pulse durations at the sample position. Our simulations show that electron bunches containing few thousands of electrons per bunch are only weakly broadened by space-charge effects and their pulse duration is thus close to the one of a single-electron wavepacket. With our compact setup, we can create electron bunches containing up to 5000 electrons with a pulse duration below 100 fs on the sample. We use the diffractometer to track the energy transfer from photoexcited electrons to the lattice in a thin film of titanium. This process takes place on the timescale of few-hundred femtoseconds and a fully equilibrated state is reached within 1 ps

  17. Compact Dual-Band Zeroth-Order Resonance Antenna

    International Nuclear Information System (INIS)

    Xu He-Xiu; Wang Guang-Ming; Gong Jian-Qiang

    2012-01-01

    A novel microstrip zeroth-order resonator (ZOR) antenna and its equivalent circuit model are exploited with two zeroth-order resonances. It is constructed based on a resonant-type composite right/left handed transmission line (CRLH TL) using a Wunderlich-shaped extended complementary single split ring resonator pair (W-ECSSRRP) and a series capacitive gap. The gap either can be utilized for double negative (DNG) ZOR antenna or be removed to engineer a simplified elision-negative ZOR (ENG) antenna. For verification, a DNG ZOR antenna sample is fabricated and measured. Numerical and experimental results agree well with each other, indicating that the omnidirectional radiations occur at two frequency bands which are accounted for by two shunt branches in the circuit model. The size of the antenna is 49% more compact than its previous counterpart. The superiority of W-ECSSRRP over CSSRRP lies in the lower fundamental resonance of the antenna by 38.2% and the introduction of a higher zeroth-order resonance. (fundamental areas of phenomenology(including applications))

  18. Electronic band structures of binary skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)

    2015-10-25

    The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.

  19. Electronic band structures of binary skutterudites

    International Nuclear Information System (INIS)

    Khan, Banaras; Aliabad, H.A. Rahnamaye; Saifullah; Jalali-Asadabadi, S.; Khan, Imad; Ahmad, Iftikhar

    2015-01-01

    The electronic properties of complex binary skutterudites, MX 3 (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures

  20. A compact D-band monolithic APDP-based sub-harmonic mixer

    Science.gov (United States)

    Zhang, Shengzhou; Sun, Lingling; Wang, Xiang; Wen, Jincai; Liu, Jun

    2017-11-01

    The paper presents a compact D-band monolithic sub-harmonic mixer (SHM) with 3 μm planar hyperabrupt schottky-varactor diodes offered by 70 nm GaAs mHEMT technology. According to empirical equivalent-circuit models, a wide-band large signal equivalent circuit model of the diode is proposed. Based on the extracted model, the mixer is implemented and optimized with a shunt-mounted anti-parallel diode pair (APDP) to fulfill the sub-harmonic mixing mechanism. Furthermore, a modified asymmetric three-transmission-line coupler is devised to achieve high-level coupling and minimize the chip size. The measured results show that the conversion gain varies between -13.9 dB and -17.5 dB from 110 GHz to 145 GHz, with a local oscillator (LO) power level of 14 dBm and an intermediate frequency (IF) of 1 GHz. The total chip size including probe GSG pads is 0.57 × 0.68mm2. In conclusion, the mixer exhibits outstanding figure-of-merits.

  1. A Very Compact and Low Profile UWB Planar Antenna with WLAN Band Rejection

    Directory of Open Access Journals (Sweden)

    Avez Syed

    2016-01-01

    Full Text Available A low-cost coplanar waveguide fed compact ultrawideband (UWB antenna with band rejection characteristics for wireless local area network (WLAN is proposed. The notch band characteristic is achieved by etching half wavelength C-shaped annular ring slot in the radiating patch. By properly choosing the radius and position of the slot, the notch band can be adjusted and controlled. With an overall size of 18.7 mm × 17.6 mm, the antenna turns out to be one of the smallest UWB antennas with band-notched characteristics. It has a wide fractional bandwidth of 130% (2.9–13.7 GHz with VSWR < 2 and rejecting IEEE 802.11a and HIPERLAN/2 frequency band of 5.1–5.9 GHz. Stable omnidirectional radiation patterns in the H plane with an average gain of 4.4 dBi are obtained. The band-notch mechanism of the proposed antenna is examined by HFSS simulator. A good agreement is found between measured and simulated results indicating that the proposed antenna is well suited for integration into portable devices for UWB applications.

  2. Strain-induced enhancement of thermoelectric performance of TiS2 monolayer based on first-principles phonon and electron band structures

    Science.gov (United States)

    Li, Guanpeng; Yao, Kailun; Gao, Guoying

    2018-01-01

    Using first-principle calculations combined with Boltzmann transport theory, we investigate the biaxial strain effect on the electronic and phonon thermal transport properties of a 1 T (CdI2-type) structural TiS2 monolayer, a recent experimental two-dimensional (2D) material. It is found that the electronic band structure can be effectively modulated and that the band gap experiences an indirect-direct-indirect transition with increasing tensile strain. The band convergence induced by the tensile strain increases the Seebeck coefficient and the power factor, while the lattice thermal conductivity is decreased under the tensile strain due to the decreasing group velocity and the increasing scattering chances between the acoustic phonon modes and the optical phonon modes, which together greatly increase the thermoelectric performance. The figure of merit can reach 0.95 (0.82) at an 8 percent tensile strain for the p-type (n-type) doping, which is much larger than that without strain. The present work suggests that the TiS2 monolayer is a good candidate for 2D thermoelectric materials, and that biaxial strain is a powerful tool with which to enhance thermoelectric performance.

  3. Compact triple band-stop filter using novel epsilon-shaped metamaterial with lumped capacitor

    Science.gov (United States)

    Ali, W. A. E.; Hamdalla, M. Z. M.

    2018-04-01

    This paper presents the design of a novel epsilon-shaped metamaterial unit cell structure that is applicable for single-band and multi-band applications. A closed-form formulas to control the resonance frequencies of the proposed design are included. The proposed unit cell, which exhibits negative permeability at its frequency bands, is etched from the ground plane to form a band-stop filter. The filter design is constructed to validate the band-notched characteristics of the proposed unit cell. A lumped capacitor is inserted for size reduction purpose in addition to multi-resonance generation. The fundamental resonance frequency is translated from 3.62 GHz to 2.45 GHz, which means that the filter size will be more compact (more than 32% size reduction). The overall size of the proposed filter is 13 × 6 × 1.524 mm3, where the electrical size is 0.221λg × 0.102λg × 0.026λg at the lower frequency band (2.45 GHz). Two other resonance frequencies are generated at 5.3 GHz and 9.2 GHz, which confirm the multi-band behavior of the proposed filter. Good agreement between simulated and measured characteristics of the fabricated filter prototype is achieved.

  4. Status of the Northrop Grumman Compact Infrared Free-Electron Laser

    Energy Technology Data Exchange (ETDEWEB)

    Lehrman, I.S.; Krishnaswamy, J.; Hartley, R.A. [Northrop Grumman Advanced Technology & Development Center, Princeton, NJ (United States)] [and others

    1995-12-31

    The Compact Infrared Free Electron Laser (CIRFEL) was built as part of a joint collaboration between the Northrop Grumman Corporation and Princeton University to develop FEL`s for use by researchers in the materials, medical and physical sciences. The CIRFEL was designed to lase in the Mid-IR and Far-IR regimes with picosecond pulses, megawatt level peak powers and an average power of a few watts. The micropulse separation is 7 nsec which allows a number of relaxation phenomenon to be observed. The CIRFEL utilizes an RF photocathode gun to produce high-brightness time synchronized electron bunches. The operational status and experimental results of the CERFEL will be presented.

  5. Small compact pulsed electron source for radiation technologies

    International Nuclear Information System (INIS)

    Korenev, Sergey

    2002-01-01

    The small compact pulsed electron source for radiation technologies is considered in the report. The electron source consists of pulsed high voltage Marx generator and vacuum diode with explosive emission cathode. The main parameters of electron source are next: kinetic energy is 100-150 keV, beam current is 5-200 A and pulse duration is 100-400 nsec. The distribution of absorbed doses in irradiated materials is considered. The physical feasibility of pulsed low energy electron beam for applications is considered

  6. A compact electron storage ring design

    International Nuclear Information System (INIS)

    Swenson, C.A.

    1992-01-01

    Electron storage rings are sources of synchrotron radiation in the soft and hard parts of the x-ray spectrum. X-ray lithography is an ideal candidate technology for the production of microelectronic devices with sizes between 0.3-0.5 microns. Industrial x-ray lithography requires the x-ray source, which is the electron storage ring, to be as compact and reliable as possible. In this thesis the author reviews and develops the basic physical principles governing the design of compact electron synchrotrons for x-ray lithography. He explores the various aspects of lattice design for this application. He argues that the optimal storage ring design consists of a four fold symmetric cell lattice with two quadrupole families and 90 degrees zero gradient dipole magnets. It is demonstrated that radiation requirements for lithography and the use of zero gradient magnetic dipole fields constrains the lattice to four or more dipole magnets. The author develops a lattice design for x-ray lithography following this logic. He then develops a dipole magnet design for a machine using this lattice. Particle tracking data is integrated into the magnet design and used to optimize the end coil configurations of the magnets. The author then reviews the magnet's physical construction and measurement. He develops a cryogenic Hall probe mapping apparatus for this magnet and measure its excitation curves

  7. Electron currents associated with an auroral band

    International Nuclear Information System (INIS)

    Spiger, R.J.; Anderson, H.R.

    1975-01-01

    Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed

  8. Electron currents associated with an auroral band

    Science.gov (United States)

    Spiger, R. J.; Anderson, H. R.

    1975-01-01

    Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed.

  9. Compaction dynamics of crunchy granular material

    Directory of Open Access Journals (Sweden)

    Guillard François

    2017-01-01

    Full Text Available Compaction of brittle porous material leads to a wide variety of densification patterns. Static compaction bands occurs naturally in rocks or bones, and have important consequences in industry for the manufacturing of powder tablets or metallic foams for example. Recently, oscillatory compaction bands have been observed in brittle porous media like snow or cereals. We will discuss the great variety of densification patterns arising during the compaction of puffed rice, including erratic compaction at low velocity, one or several travelling compaction bands at medium velocity and homogeneous compaction at larger velocity. The conditions of existence of each pattern are studied thanks to a numerical spring lattice model undergoing breakage and is mapped to the phase diagram of the patterns based on dimensionless characteristic quantities. This also allows to rationalise the evolution of the compaction behaviour during a single test. Finally, the localisation of compaction bands is linked to the strain rate sensitivity of the material.

  10. Compaction dynamics of crunchy granular material

    Science.gov (United States)

    Guillard, François; Golshan, Pouya; Shen, Luming; Valdès, Julio R.; Einav, Itai

    2017-06-01

    Compaction of brittle porous material leads to a wide variety of densification patterns. Static compaction bands occurs naturally in rocks or bones, and have important consequences in industry for the manufacturing of powder tablets or metallic foams for example. Recently, oscillatory compaction bands have been observed in brittle porous media like snow or cereals. We will discuss the great variety of densification patterns arising during the compaction of puffed rice, including erratic compaction at low velocity, one or several travelling compaction bands at medium velocity and homogeneous compaction at larger velocity. The conditions of existence of each pattern are studied thanks to a numerical spring lattice model undergoing breakage and is mapped to the phase diagram of the patterns based on dimensionless characteristic quantities. This also allows to rationalise the evolution of the compaction behaviour during a single test. Finally, the localisation of compaction bands is linked to the strain rate sensitivity of the material.

  11. Commercialization of an S-band standing-wave electron accelerator for industrial applications

    Science.gov (United States)

    Moon, Jin-Hyeok; Kwak, Gyeong-Il; Han, Jae-Ik; Lee, Gyu-Baek; Jeon, Seong-Hwan; Kim, Jae-Young; Hwang, Cheol-Bin; Lee, Gi-Yong; Kim, Young-Man; Park, Sung-Ju

    2016-09-01

    An electron accelerator system has been developed for use in industrial, as well as possible medical, applications. Based on our experiences achieved during prototype system development and various electron beam acceleration tests, we have built a stable and compact system for sales purposes. We have integrated a self-developed accelerating cavity, an E-gun pulse driver, a radio-frequency (RF) power system, a vacuum system, a cooling system, etc. into a frame with a size of 1800 × 1000 × 1500 mm3. The accelerating structure is a side-coupled standing-wave type operating in the π/2 mode (tuned to~3 GHz). The RF power is provided by using a magnetron driven by a solid-state modulator. The electron gun is a triode type with a dispenser cathode (diameter of 11 mm). The system is capable of delivering a maximum 900-W average electron beam power with tight focusing at the target. Until now, we have performed various electron beam tests and X-ray beam tests after having built the system, have completed the beam assessment for commercializations, and have been preparing full-fledged sales activity. This article reports on our system development processes and on some of our early test results for commercializations.

  12. Ultra-compact Ku band rectenna

    OpenAIRE

    Takacs , Alexandru; Aubert , Hervé; Charlot , Samuel

    2015-01-01

    International audience; This paper addresses an innovative and ultra-compact rectenna designed for energy harvesting or wireless power transfer applications. The presented rectenna uses a printed cross dipoles antenna array and a rectifier implemented with only one silicon Schottky diode. Experimental results show that 1.15 mW of DC power can be obtained for an optimal load impedance of 500 Ω using a compact rectenna (2.5 cm 2 or 0.6 square wavelength) illuminated by an electric field of 60 V...

  13. Electron band theory 1952-1962

    International Nuclear Information System (INIS)

    Lomer, W.M.

    1980-01-01

    Work undertaken by the Theoretical Physics Division between 1952 and 1965 to obtain an understanding of electrons in metals, with uranium and the actinides and the structurally-important transition metals as the main targets is examined. A main result of that period was a conviction that the majority of the physical properties of all metals, except the 4f rare-earth series and the actinides beyond uranium, were dominated by band effects which could be described well enough for most purposes by simple one-electron calculations with simple self-consistent fields. The period from 1960 on showed increasingly clearly the necessity of incorporating relativistic spin-orbit coupling terms in the heavy metals, and some 'local exchange field' correction to the fields close to nuclei. The problems of the non-local interaction of spins - highly important for alloy theory and for antiferromagnetic instability -required the evolution of computers large enough to produce wave-functions at all wave-vectors for all bands so that the susceptibility at arbitrary wave-vector could be computed. This work has not proved to be very illuminating so far, and much interest again focusses today on heuristic arguments that give qualitative descriptions of band structures, such as canonical d-bands to account for crystal structure. (UK)

  14. Compact printed high rejection triple band-notch UWB antenna with multiple wireless applications

    Directory of Open Access Journals (Sweden)

    Manish Sharma

    2016-09-01

    Full Text Available In this paper, small printed urn-shape triple notch ultra-wideband (UWB monopole antenna with diverse wireless applications is presented. Notch bands include WiMAX (IEEE802.16 3.30–3.80 GHz, WLAN IEEE802.11a/h/j/n (5.15–5.35 GHz, 5.25–5.35 GHz, 5.47–5.725 GHz, 5.725–5.825 GHz, and X-band downlink satellite system (7.25–7.75 GHz and other multiple wireless services as close range radar (8–12 GHz in X-band & satellite communication (12–18 GHz in Ku-band. By including T-shape stub and etching two C-shaped slots on the radiating patch, triple band-notch function is obtained with measured high band rejection (VSWR = 16.54 at 3.60 GHz, VSWR = 22.35 at 5.64 GHz and VSWR = 6.38 at 7.64 GHz and covers a wide useable fractional bandwidth of 154.56% (2.49–19.41 GHz. In short the antenna offers triple band-notch UWB systems as a compact multifunctional antenna to reduce the number of antennas installed in wireless devices for accessing multiple wireless networks with wide radiation pattern.

  15. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao

    2016-07-25

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  16. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Hedhili, Mohamed N.; Janjua, Bilal; Alias, Mohd Sharizal; Anjum, Dalaver H.; Tseng, Chien-Chih; Shi, Yumeng; Joyce, Hannah J.; Li, Lain-Jong; Ooi, Boon S.

    2016-01-01

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  17. Design study of an S-band RF cavity of a dual-energy electron LINAC for the CIS

    Science.gov (United States)

    Lee, Byeong-No; Park, Hyungdal; Song, Ki-baek; Li, Yonggui; Lee, Byung Cheol; Cha, Sung-su; Lee, Jong-Chul; Shin, Seung-Wook; Chai, Jong-seo

    2014-01-01

    The design of a resonance frequency (RF) cavity for the dual-energy S-band electron linear accelerator (LINAC) has been carried out for the cargo inspection system (CIS). This Standing-wave-type RF cavity is operated at a frequency under the 2856-MHz resonance frequency and generates electron beams of 9 MeV (high mode) and 6 MeV (low mode). The electrons are accelerated from the initial energy of the electron gun to the target energy (9 or 6 MeV) inside the RF cavity by using the RF power transmitted from a 5.5-MW-class klystron. Then, electron beams with a 1-kW average power (both high mode and low mode) bombard an X-ray target a 2-mm spot size. The proposed accelerating gradient was 13 MV/m, and the designed Q value was about 7100. On going research on 15-MeV non-destructive inspections for military or other applications is presented.

  18. Bunch Compressor Beamlines for the Tesla and S Band Linear Colliders

    CERN Document Server

    Emma, P

    2003-01-01

    A detailed design for a single stage beam bunch length compressor for both the TESLA and the S-Band Linear Collider (SBLC) is presented. Compression is achieved by introducing an energy-position correlation along the bunch with an rf section at zero-crossing phase followed by a short bending section with energy dependent path length (momentum compaction). The motivation for a wiggler design is presented and many of the critical single bunch tolerances are evaluated. A solenoid based spin rotator is included in the design and transverse emittance tuning elements, diagnostics and tuning methods are described. Bunch length limitations due to second order momentum compaction and sinusoidal rf shape are discussed with options for compensation. Finally, the disadvantages of bunch compression using a 180 sup o arc are discussed.

  19. Compact multi-energy electron linear accelerators

    International Nuclear Information System (INIS)

    Tanabe, E.; Hamm, R.W.

    1985-01-01

    Two distinctly different concepts that have been developed for compact multi-energy, single-section, standing-wave electron linear accelerator structures are presented. These new concepts, which utilize (a) variable nearest neighbor couplings and (b) accelerating field phase switching, provide the capability of continuously varying the electron output energy from the accelerator without degrading the energy spectrum. These techniques also provide the means for continuously varying the energy spectrum while maintaining a given average electron energy, and have been tested successfully with several accelerators of length from 0.1 m to 1.9 m. Theoretical amd experimental results from these accelerators, and demonstrated applications of these techniques to medical and industrial linear accelerator technology will be described. In addition, possible new applications available to research and industry from these techniques are presented. (orig.)

  20. X-band RF gun and linac for medical Compton scattering X-ray source

    International Nuclear Information System (INIS)

    Dobashi, Katsuhito; Uesaka, Mitsuru; Fukasawa, Atsushi; Sakamoto, Fumito; Ebina, Futaro; Ogino, Haruyuki; Urakawa, Junji; Higo, Toshiyasu; Akemoto, Mitsuo; Hayano, Hitoshi; Nakagawa, Keiichi

    2004-01-01

    Compton scattering hard X-ray source for 10-80 keV are under construction using the X-band (11.424 GHz) electron linear accelerator and YAG laser at Nuclear Engineering Research laboratory, University of Tokyo. This work is a part of the national project on the development of advanced compact medical accelerators in Japan. National Institute for Radiological Science is the host institute and U.Tokyo and KEK are working for the X-ray source. Main advantage is to produce tunable monochromatic hard (10-80 keV) X-rays with the intensities of 108-1010 photons/s (at several stages) and the table-top size. Second important aspect is to reduce noise radiation at a beam dump by adopting the deceleration of electrons after the Compton scattering. This realizes one beamline of a 3rd generation SR source at small facilities without heavy shielding. The final goal is that the linac and laser are installed on the moving gantry. We have designed the X-band (11.424 GHz) traveling-wave-type linac for the purpose. Numerical consideration by CAIN code and luminosity calculation are performed to estimate the X-ray yield. X-band thermionic-cathode RF-gun and RDS(Round Detuned Structure)-type X-band accelerating structure are applied to generate 50 MeV electron beam with 20 pC microbunches (104) for 1 microsecond RF macro-pulse. The X-ray yield by the electron beam and Q-switch Nd:YAG laser of 2 J/10 ns is 107 photons/RF-pulse (108 photons/sec at 10 pps). We design to adopt a technique of laser circulation to increase the X-ray yield up to 109 photons/pulse (1010 photons/s). 50 MW X-band klystron and compact modulator have been constructed and now under tuning. The construction of the whole system has started. X-ray generation and medical application will be performed in the early next year

  1. X-band RF gun and linac for medical Compton scattering X-ray source

    Science.gov (United States)

    Dobashi, Katsuhito; Uesaka, Mitsuru; Fukasawa, Atsushi; Sakamoto, Fumito; Ebina, Futaro; Ogino, Haruyuki; Urakawa, Junji; Higo, Toshiyasu; Akemoto, Mitsuo; Hayano, Hitoshi; Nakagawa, Keiichi

    2004-12-01

    Compton scattering hard X-ray source for 10-80 keV are under construction using the X-band (11.424 GHz) electron linear accelerator and YAG laser at Nuclear Engineering Research laboratory, University of Tokyo. This work is a part of the national project on the development of advanced compact medical accelerators in Japan. National Institute for Radiological Science is the host institute and U.Tokyo and KEK are working for the X-ray source. Main advantage is to produce tunable monochromatic hard (10-80 keV) X-rays with the intensities of 108-1010 photons/s (at several stages) and the table-top size. Second important aspect is to reduce noise radiation at a beam dump by adopting the deceleration of electrons after the Compton scattering. This realizes one beamline of a 3rd generation SR source at small facilities without heavy shielding. The final goal is that the linac and laser are installed on the moving gantry. We have designed the X-band (11.424 GHz) traveling-wave-type linac for the purpose. Numerical consideration by CAIN code and luminosity calculation are performed to estimate the X-ray yield. X-band thermionic-cathode RF-gun and RDS(Round Detuned Structure)-type X-band accelerating structure are applied to generate 50 MeV electron beam with 20 pC microbunches (104) for 1 microsecond RF macro-pulse. The X-ray yield by the electron beam and Q-switch Nd:YAG laser of 2 J/10 ns is 107 photons/RF-pulse (108 photons/sec at 10 pps). We design to adopt a technique of laser circulation to increase the X-ray yield up to 109 photons/pulse (1010 photons/s). 50 MW X-band klystron and compact modulator have been constructed and now under tuning. The construction of the whole system has started. X-ray generation and medical application will be performed in the early next year.

  2. High Peak Power Test and Evaluation of S-band Waveguide Switches

    Science.gov (United States)

    Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

    1997-05-01

    The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

  3. Valence band electronic structure of Pd based ternary chalcogenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

    2016-12-15

    Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

  4. The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

    OpenAIRE

    Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

    2012-01-01

    The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefe...

  5. Dissolution and compaction instabilities in geomaterials

    Science.gov (United States)

    Stefanou, I.; Sulem, J.; de Sauvage, J.

    2014-12-01

    Compaction bands play an important role in reservoir engineering and geological storage. Their presence in geological formations may also provide useful information on various geological processes. Several mechanisms can be involved at different scales and may be responsible for compaction band instabilities [1]. Compaction bands can be seen as a particular instability of the governing mathematical system leading to localization of deformation [2-4]. In a saturated porous rock, the progressive mechanical damage of the solid skeleton during compaction, results in the increase of the interface area of the reactants and consequently in the acceleration of the dissolution rate of the solid phase [2,5]. Thus, the solid skeleton is degraded more rapidly (mass removal because of dissolution), the overall mechanical properties of the system diminish (contraction of the elastic domain - chemical softening), deformations increase and the solid skeleton is further damaged (intergranular fractures, debonding, breakage of the porous network etc.). The stability of this positive feedback process is investigated analytically through linear stability analysis by considering the strong chemo-poro-mechanical coupling due to chemical dissolution. The post bifurcation behavior is then studied analytically and numerically revealing the compaction band thickness and periodicity. The effect of various parameters is studied as for instance the influence of the hydraulic diffusivity on the compaction band thickness. [1] P. Baud, S. Vinciguerra, C. David, A. Cavallo, E. Walker and T. Reuschlé (2009), Pure Appl. Geophys., 166(5-7), 869-898 [2] I. Stefanou and J. Sulem (2014), JGR: Solid Earth, 119(2), 880-899. doi:10.1002/2013JB010342I [3] J.W. Rudnicki and J.R. Rice (1975), Journal of the Mechanics and Physics of Solids 23(6),: 371-394 [4] K.A. Issen and J.W. Rudnicki (2000), JGR, 105(B9), 21529. doi:10.1029/2000JB900185 [5] R. Nova, R. Castellanza and C. Tamagnini (2003), International

  6. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong

    2015-01-01

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  7. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui

    2015-07-16

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  8. Electronic band structure

    International Nuclear Information System (INIS)

    Grosso, G.

    1986-01-01

    The aim of this chapter is to present, in detail, some theoretical methods used to calculate electronic band structures in crystals. The basic strategies employed to attack the problem of electronic-structure calculations are presented. Successive sections present the basic formulations of the tight-binding, orthogonalized-plane-wave, Green'sfunction, and pseudopotential methods with a discussion of their application to perfect solids. Exemplifications in the case of a few selected problems provide further insight by the author into the physical aspects of the different methods and are a guide to the use of their mathematical techniques. A discussion is offered of completely a priori Hartree-Fock calculations and attempts to extend them. Special aspects of the different methods are also discussed in light of recently published related work

  9. Compact fitting formulas for electron-impact cross sections

    International Nuclear Information System (INIS)

    Kim, Y.K.

    1992-01-01

    Compact fitting formulas, which contain four fitting constants, are presented for electron-impact excitation and ionization cross sections of atoms and ions. These formulas can fit experimental and theoretical cross sections remarkably well, when resonant structures are smoothed out, from threshold to high incident electron energies (<10 keV), beyond which relativistic formulas are more appropriate. Examples of fitted cross sections for some atoms and ions are presented. The basic form of the formula is valid for both atoms and molecules

  10. Determination of band offsets at GaN/single-layer MoS{sub 2} heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Alias, Mohd Sharizal; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Hedhili, Mohamed Nejib; Anjum, Dalaver H. [Adavanced Nanofabrication Imaging and Characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tseng, Chien-Chih; Shi, Yumeng; Li, Lain-Jong [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Joyce, Hannah J. [Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, Cambridgeshire CB3 0FA (United Kingdom)

    2016-07-18

    We report the band alignment parameters of the GaN/single-layer (SL) MoS{sub 2} heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS{sub 2}/c-sapphire. We confirm that the MoS{sub 2} is an SL by measuring the separation and position of room temperature micro-Raman E{sup 1}{sub 2g} and A{sup 1}{sub g} modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS{sub 2} heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS{sub 2} and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  11. Operational Performance and Improvements to the RF Power Sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    OpenAIRE

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses ...

  12. Broad-Band Variability in Accreting Compact Objects

    Directory of Open Access Journals (Sweden)

    S. Scaringi

    2015-02-01

    Full Text Available Cataclysmic variable stars are in many ways similar to X-ray binaries. Both types of systems possess an accretion disk, which in most cases can reach the surface (or event horizon of the central compact object. The main difference is that the embedded gravitational potential well in X-ray binaries is much deeper than those found in cataclysmic variables. As a result, X-ray binaries emit most of their radiation at X-ray wavelengths, as opposed to cataclysmic variables which emit mostly at optical/ultraviolet wavelengths. Both types of systems display aperiodic broad-band variability which can be associated to the accretion disk. Here, the properties of the observed X-ray variability in XRBs are compared to those observed at optical wavelengths in CVs. In most cases the variability properties of both types of systems are qualitatively similar once the relevant timescales associated with the inner accretion disk regions have been taken into account. The similarities include the observed power spectral density shapes, the rms-flux relation as well as Fourier-dependant time lags. Here a brief overview on these similarities is given, placing them in the context of the fluctuating accretion disk model which seeks to reproduce the observed variability.

  13. Ultrathin triple-band polarization-insensitive wide-angle compact metamaterial absorber

    International Nuclear Information System (INIS)

    Shang, Shuai; Yang, Shizhong; Tao, Lu; Yang, Lisheng; Cao, Hailin

    2016-01-01

    In this study, the design, realization, and characterization of an ultrathin triple-band polarization-insensitive wide-angle metamaterial absorber are reported. The metamaterial absorber comprises a periodic array of modified six-fold symmetric snowflake-shaped resonators with strip spiral line load, which is printed on a dielectric substrate backed by a metal ground plane. It is shown that the absorber exhibits three distinct near-unity absorption peaks, which are distributed across C, X, Ku bands, respectively. Owing to the six-fold symmetry, the absorber is insensitive to the polarization of the incident radiation. In addition, the absorber shows excellent absorption performance over wide oblique incident angles for both transverse electric and transverse magnetic polarizations. Simulated surface current and field distributions at the three absorption peaks are demonstrated to understand the absorption mechanism. Particularly, the absorption modes come from the fundamental and high-order dipole resonances. Furthermore, the experimental verification of the designed absorber is conducted, and the measured results are in reasonable agreement with the simulated ones. The proposed ultrathin (∼0.018λ 0 , λ 0 corresponding to the lowest peak absorption frequency) compact (0.168λ 0 ×0.168λ 0 corresponding to the area of a unit cell) absorber enables potential applications such as stealth technology, electromagnetic interference and spectrum identification.

  14. Design of a Compact Planar Rectenna for Wireless Power Transfer in the ISM Band

    OpenAIRE

    Fang Zhang; Xin Liu; Fan-Yi Meng; Qun Wu; Jong-Chul Lee; Jin-Feng Xu; Cong Wang; Nam-Young Kim

    2014-01-01

    This paper presents a compact planar rectenna with high conversion efficiency in the ISM band. The proposed rectenna is developed by the decomposing of a planar rectenna topology into two functional parts and then recombining the two parts into a new topology to make the rectenna size reduction. The operation mechanism of the antenna and rectifying circuit in the proposed novel topology is explained and the design methodology is presented in detail. The proposed topology not only reduces the ...

  15. Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters.

    Science.gov (United States)

    Huang, Zhizhen; Huang, Yifeng; Xu, Ningsheng; Chen, Jun; She, Juncong; Deng, Shaozhi

    2018-06-13

    Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm 2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.

  16. Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well

    International Nuclear Information System (INIS)

    Zhong Qinghu; Lai Liping

    2013-01-01

    Electron Raman scattering (ERS) is investigated in a spherical HgS/CdS quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. (semiconductor physics)

  17. f-electron systems: pushing band theory

    International Nuclear Information System (INIS)

    Koelling, D.D.

    1991-01-01

    The f-electron orbitrals have always been the ''incomplete atomic shells acting as local moments, and weakly interacting with the remaining electronic structure'' in the minds of most people. So examining them using a band theory where one views them as itinerant was once - and to some extent even today still is - considered with some skepticism. Nonetheless, a very significant community has successfully utilized band theory as a probe of the electronic structure of the appropriate actinides and rare earths. Those people actually using the approach would be the first to declare that it is not the whole solution. Instead, one is pushing and even exceeding its limit of applicability. However, the apropriate procedure is to push the model consistently to its limits, patch where possible, and then look to see where discrepancies remain. I propose to offer a selected review of past developments (emphasizing the career to data of A.J. Freeman in this area), offer a list of interesting puzzles for the future, and then make some guesses as to the techniques one might want to use. (orig.)

  18. Electron beam halo monitor for a compact x-ray free-electron laser

    Directory of Open Access Journals (Sweden)

    Hideki Aoyagi

    2013-03-01

    Full Text Available An electron beam halo monitor using diamond-based detectors, which are operated in the ionization mode, has been developed for the SPring-8 Angstrom compact free-electron laser (SACLA to protect its undulator magnets from radiation damage. Diamond-based detectors are inserted in a beam duct to measure the intensity of the beam halo directly. To suppress the degradation of the electron beam due to the installation of the beam halo monitor, rf fingers with aluminum windows are newly employed. We evaluated the effect of radiation from the Al windows on the output signal both experimentally and by simulation. The operational results of the beam halo monitor employed in SACLA are presented.

  19. A compact x-ray free electron laser

    International Nuclear Information System (INIS)

    Barletta, W.; Attac, M.; Cline, D.B.

    1988-01-01

    We present a design concept and simulation of the performance of a compact x-ray, free electron laser driven by ultra-high gradient rf-linacs. The accelerator design is based on recent advances in high gradient technology by a LLNL/SLAC/LBL collaboration and on the development of bright, high current electron sources by BNL and LANL. The GeV electron beams generated with such accelerators can be concerted to soft x-rays in the range from 2--10 nm by passage through short period, high fields strength wigglers as are being designed at Rocketdyne. Linear light sources of this type can produce trains of picosecond (or shorter) pulses of extremely high spectral brilliance suitable for flash holography of biological specimens in vivo and for studies of fast chemical reactions. 12 refs., 8 figs., 4 tabs

  20. Electronic structure of Ag8GeS6

    Directory of Open Access Journals (Sweden)

    D.I. Bletskan

    2017-04-01

    Full Text Available For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations. Argyrodite is direct-gap semiconductor with the calculated band gap width Egd = 1.46 eV in the LDA+U approximation. The valence band of argyrodite contains four energy separated groups of occupied subzones. The unique feature of electron-energy structure of Ag8GeS6 crystal is the energy overlapping between the occupied d-states of Ag atoms and the delocalized valence p-states of S atoms in relatively close proximity to the valence band top.

  1. Model Development for MODIS Thermal Band Electronic Crosstalk

    Science.gov (United States)

    Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghonh; Brinkman, Jake; Keller, Graziela; Xiong, Xiaoxiong

    2016-01-01

    MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 m. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands developed substantial issues that cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 m and band 29 at 8.5 m increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk effect is evident in the near-monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. The development of an alternative approach is very helpful for independent verification.In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically to correct the Earth brightness temperature measurements. In the model development, the detectors nonlinear response is considered. The impact of the electronic crosstalk is assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detectors nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector non-linearity, and the ratio of Earth measurements between the sending and receiving bands. The correction of the electronic cross talk can be implemented empirically from the processed bias at different brightness temperature. The implementation

  2. Electronic Band Structure of BaCo_{2}As_{2}: A Fully Doped Ferropnictide Analog with Reduced Electronic Correlations

    Directory of Open Access Journals (Sweden)

    N. Xu

    2013-01-01

    Full Text Available We report an investigation with angle-resolved photoemission spectroscopy of the Fermi surface and electronic band structure of BaCo_{2}As_{2}. Although its quasinesting-free Fermi surface differs drastically from that of its Fe-pnictide cousins, we show that the BaCo_{2}As_{2} system can be used as an approximation to the bare unoccupied band structure of the related BaFe_{2-x}Co_{x}As_{2} and Ba_{1-x}K_{x}Fe_{2}As_{2} compounds. However, our experimental results, in agreement with dynamical-mean-field-theory calculations, indicate that electronic correlations are much less important in BaCo_{2}As_{2} than in the ferropnictides. Our findings suggest that this effect is due to the increased filling of the electronic 3d shell in the presence of significant Hund’s exchange coupling.

  3. Electronic pairing mechanism due to band modification with increasing pair number

    International Nuclear Information System (INIS)

    Mizia, J.

    1995-01-01

    It is shown that a shift of an electron band with electron occupation number n, which is changing during the transition to the superconducting state, can lower the total energy of the system. In fact it will bring a negative contribution to the pairing potential, which is proportional to the product of the electron band shift with occupation number and the charge transfer during the transition to the superconducting state. The shift of the electron band comes from the change of stresses and the change of correlation effects in the CuO 2 plane with n, that in turn is caused by the changing oxygen concentration. This model explains the phenomenological success of Hirsch's model, which gives no explanation how the band shift in energy can give rise to superconductivity. (orig.)

  4. Measurement of the band gap by reflection electron energy loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Vos, Maarten, E-mail: maarten.vos@anu.edu.au [Electronic Materials Engineering Department, Research School of Physics and Engineering, The Australian National University, Canberra 0200 (Australia); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 (United States); French, Benjamin L. [Ocotillo Materials Laboratory, Intel Corporation, Chandler, AZ 85248 (United States)

    2016-10-15

    Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

  5. Measurement of the band gap by reflection electron energy loss spectroscopy

    International Nuclear Information System (INIS)

    Vos, Maarten; King, Sean W.; French, Benjamin L.

    2016-01-01

    Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

  6. Electron correlations in narrow energy bands: modified polar model approach

    Directory of Open Access Journals (Sweden)

    L. Didukh

    2008-09-01

    Full Text Available The electron correlations in narrow energy bands are examined within the framework of the modified form of polar model. This model permits to analyze the effect of strong Coulomb correlation, inter-atomic exchange and correlated hopping of electrons and explain some peculiarities of the properties of narrow-band materials, namely the metal-insulator transition with an increase of temperature, nonlinear concentration dependence of Curie temperature and peculiarities of transport properties of electronic subsystem. Using a variant of generalized Hartree-Fock approximation, the single-electron Green's function and quasi-particle energy spectrum of the model are calculated. Metal-insulator transition with the change of temperature is investigated in a system with correlated hopping. Processes of ferromagnetic ordering stabilization in the system with various forms of electronic DOS are studied. The static conductivity and effective spin-dependent masses of current carriers are calculated as a function of electron concentration at various DOS forms. The correlated hopping is shown to cause the electron-hole asymmetry of transport and ferromagnetic properties of narrow band materials.

  7. Development of a Polarized Electron Gun Based on an S-Band PWT Photoinjector

    CERN Document Server

    Clendenin, J E; Yu, D; Newsham, D; Luo, Y; Smirnov, A

    2003-01-01

    An RF polarized electron gun utilizing the unique features of an integrated, plane-wave-transformer (PWT) photoelectron injector [1] is being developed by DULY Research Inc. in collaboration with SLAC. Modifications to a DULY S-band device [2] include: a re-design of the photocathode/RF backplane interface to accommodate a GaAs cathode; change in the design of the vacuum ports to provide 10-11 Torr operation; the inclusion of a load-lock photocathode replacement system to allow for reactivation and cessation of the GaAs photocathode in a vacuum; and alteration of the magnet field coils to make room for the load-lock. The use of a stainless steel outer tank and cooling rods without copper plating may also provide better vacuum performance at the expense of diminished Q factor. The effectiveness of both the standard cooling rods and synthetic diamond heat sinks for disk cooling is investigated for future linear collider applications operating at a rep rate of 180 Hz and a bunch charge of 2 nC.

  8. The dependence of the tunneling characteristic on the electronic energy bands and the carrier’s states of Graphene superlattice

    Science.gov (United States)

    Yang, C. H.; Shen, G. Z.; Ao, Z. M.; Xu, Y. W.

    2016-09-01

    Using the transfer matrix method, the carrier tunneling properties in graphene superlattice generated by the Thue-Morse sequence and Kolakoski sequence are investigated. The positions and strength of the transmission can be modulated by the barrier structures, the incident energy and angle, the height and width of the potential. These carriers tunneling characteristic can be understood from the energy band structures in the corresponding superlattice systems and the carrier’s states in well/barriers. The transmission peaks above the critical incident angle rely on the carrier’s resonance in the well regions. The structural diversity can modulate the electronic and transport properties, thus expanding its applications.

  9. 50 MW C-band pulse klystron; 50MW C band pulse klystron

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    C-band pulse klystron E3746 with an output of 50 MW class was developed jointly with the High-Energy Accelerator Research Organization in the Ministry of Education as the klystron for a linear accelerator. For a large-sized linear accelerator in the next generation, a klystron with higher operating frequency has been required to obtain a compact and efficient accelerator. In E3746, the problem of power resistance during high-frequency operation was solved by mounting a traveling-wave multi-cell output circuit. Moreover, stable operation in the pulse width of 2.5 {mu}s and the output of 54 MW was performed at the same operation efficiency (44%) as the conventional S-band tube by using the frequency (in a C-band frequency band) that is two times as high as the conventional general accelerator. (translated by NEDO)

  10. L-band brightness temperature disaggregation for use with S-band and C-band radiometer data for WCOM

    Science.gov (United States)

    Yao, P.; Shi, J.; Zhao, T.; Cosh, M. H.; Bindlish, R.

    2017-12-01

    There are two passive microwave sensors onboard the Water Cycle Observation Mission (WCOM), which includes a synthetic aperture radiometer operating at L-S-C bands and a scanning microwave radiometer operating from C- to W-bands. It provides a unique opportunity to disaggregate L-band brightness temperature (soil moisture) with S-band C-bands radiometer data. In this study, passive-only downscaling methodologies are developed and evaluated. Based on the radiative transfer modeling, it was found that the TBs (brightness temperature) between the L-band and S-band exhibit a linear relationship, and there is an exponential relationship between L-band and C-band. We carried out the downscaling results by two methods: (1) downscaling with L-S-C band passive measurements with the same incidence angle from payload IMI; (2) downscaling with L-C band passive measurements with different incidence angle from payloads IMI and PMI. The downscaling method with L-S bands with the same incident angle was first evaluated using SMEX02 data. The RMSE are 2.69 K and 1.52 K for H and V polarization respectively. The downscaling method with L-C bands is developed with different incident angles using SMEX03 data. The RMSE are 2.97 K and 2.68 K for H and V polarization respectively. These results showed that high-resolution L-band brightness temperature and soil moisture products could be generated from the future WCOM passive-only observations.

  11. Operational Performance and Improvements to the RF Power Sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    CERN Document Server

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

  12. Operational performance and improvements to the rf power sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    CERN Document Server

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5 GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

  13. High resolution emission Fourier transform infrared spectra of the 4p-5s and 5p-6s bands of ArH.

    Science.gov (United States)

    Baskakov, O I; Civis, S; Kawaguchi, K

    2005-03-15

    In the 2500-8500 cm(-1) region several strong emission bands of (40)ArH were observed by Fourier transform spectroscopy through a dc glow discharge in a mixture of argon and hydrogen. Rotational-electronic transitions of the two previously unstudied 4p-5s and 5p-6s,v = 0-0, bands of (40)ArH were measured and assigned in the 6060 and 3770 cm(-1) regions, respectively. A simultaneous fit of the emission transitions of the 4p-5s and 5p-6s bands and an extended set of transitions of the 6s-4p band observed by Dabrowski, Tokaryk, and Watson [J. Mol. Spectrosc. 189, 95 (1998)] and remeasured in the present work yielded consistent values of the spectroscopic parameters of the electronic states under investigation. In the branch of the 4p-5s band with transitions of type (Q)Q(f(3)e) we observed a narrowing in the linewidths with increasing rotational quantum number N. The rotational dependence of the linewidth is caused by predissociation of the 5s state by the repulsive ground 4s state through homogeneous coupling and changes in overlap integrals of the vibrational wave functions with the rotational level. Analysis was based on the Fermi's golden rule approximation model. In the 4p-5s band region a vibrational sequence ofv(')-v(")=1-1, 2-2, and 3-3 were recorded and a number of transitions belonging to the strongest (Q)Q(f(3)e) form branch of the 1-1 band were analyzed.

  14. Beam Dynamics a Integrated Plane Wave Transformer Photoinjector at S- and X- band

    Science.gov (United States)

    Rosenzweig, J. B.; Ding, X.; Pellegrini, X.; Serafini, L.; Yu, D.

    1997-05-01

    The beam dynamics of an integrated S-band rf photoinjector based on the plane wave transformer concept, proposed as part of an SBIR collaboration between UCLA and DULY Research, are studied. The intial design, which calls for an 11.5 cell structure run at a peak on-axis accelerating field of 60 MV/m, and has a compact solenoid around the intial 2.5 cells, is based on the recently developed theory of emittance compensation(L.Serafini, and J.B. Rosenzweig, submitted to Physical Review E.). It calls for matching the beam onto an envelope which is a generalized Brillouin flow, producing a beam which diminishes in transverse size as the square root of the accelerating beam energy. This condition produces a minimized emittance, which for the S-band case is 1 mm-rad at at charge of 1 nC. This design is also scaled to produce nearly identical performance at X-band, giving an injector appropriate to running an FEL at the SLAC NLCTA. It is noted that these designs are insensitive to rf emittance increase, allowign a choice of injection phase, and the option to compress the emitted pulse.

  15. A Compact L-band Radiometer for High Resolution sUAS-based Imaging of Soil Moisture and Surface Salinity Variations

    Science.gov (United States)

    Gasiewski, A. J.; Stachura, M.; Dai, E.; Elston, J.; McIntyre, E.; Leuski, V.

    2014-12-01

    Due to the long electrical wavelengths required along with practical aperture size limitations the scaling of passive microwave remote sensing of soil moisture and salinity from spaceborne low-resolution (~10-100 km) applications to high resolution (~10-1000 m) applications requires use of low flying aerial vehicles. This presentation summarizes the status of a project to develop a commercial small Unmanned Aerial System (sUAS) hosting a microwave radiometer for mapping of soil moisture in precision agriculture and sea surface salinity studies. The project is based on the Tempest electric-powered UAS and a compact L-band (1400-1427 MHz) radiometer developed specifically for extremely small and lightweight aerial platforms or man-portable, tractor, or tower-based applications. Notable in this combination are a highly integrated sUAS/radiometer antenna design and use of both the upwelling emitted signal from the surface and downwelling cold space signal for precise calibration using a unique lobe-differencing correlating radiometer architecture. The system achieves a spatial resolution comparable to the altitude of the UAS above the surface while referencing upwelling measurements to the constant and well-known background temperature of cold space. The radiometer has been tested using analog correlation detection, although future builds will include infrared, near-infrared, and visible (red) sensors for surface temperature and vegetation biomass correction and digital sampling for radio frequency interference mitigation. This NASA-sponsored project is being developed for commercial application in cropland water management (for example, high-value shallow root-zone crops), landslide risk assessment, NASA SMAP satellite validation, and NASA Aquarius salinity stratification studies. The system will ultimately be capable of observing salinity events caused by coastal glacier and estuary fresh water outflow plumes and open ocean rainfall events.

  16. Design of Compact Flower Shape Dual Notched-Band Monopole Antenna for Extended UWB Wireless Applications

    Science.gov (United States)

    Sharma, Manish; Awasthi, Y. K.; Singh, Himanshu; Kumar, Raj; Kumari, Sarita

    2016-11-01

    In this letter, a compact monopole antenna for ultra wideband (UWB) applications is proposed with small size of 18×20=360 mm2. Antenna consist of a flower shape radiating patch with a pair of C-shaped slots which offer two notch bands for WiMAX (3.04-3.68 GHz) & WLAN (4.73-5.76 GHz) and two rectangular shaped slots in the ground plane which provides a wide measured usable fractional extended bandwidth of 163 % (2.83-14.0 GHz) with improved VSWR. Moreover, it is also convenient for other wireless application as close range radar, 8-12 GHz in X-band. Measured radiation patterns exhibits nearly omnidirectional in H-plane and dipole like pattern in E-plane across the bandwidth and furthermore exhibits good time domain performance.

  17. Band structure and orbital character of monolayer MoS2 with eleven-band tight-binding model

    Science.gov (United States)

    Shahriari, Majid; Ghalambor Dezfuli, Abdolmohammad; Sabaeian, Mohammad

    2018-02-01

    In this paper, based on a tight-binding (TB) model, first we present the calculations of eigenvalues as band structure and then present the eigenvectors as probability amplitude for finding electron in atomic orbitals for monolayer MoS2 in the first Brillouin zone. In these calculations we are considering hopping processes between the nearest-neighbor Mo-S, the next nearest-neighbor in-plan Mo-Mo, and the next nearest-neighbor in-plan and out-of-plan S-S atoms in a three-atom based unit cell of two-dimensional rhombic MoS2. The hopping integrals have been solved in terms of Slater-Koster and crystal field parameters. These parameters are calculated by comparing TB model with the density function theory (DFT) in the high-symmetry k-points (i.e. the K- and Γ-points). In our TB model all the 4d Mo orbitals and the 3p S orbitals are considered and detailed analysis of the orbital character of each energy level at the main high-symmetry points of the Brillouin zone is described. In comparison with DFT calculations, our results of TB model show a very good agreement for bands near the Fermi level. However for other bands which are far from the Fermi level, some discrepancies between our TB model and DFT calculations are observed. Upon the accuracy of Slater-Koster and crystal field parameters, on the contrary of DFT, our model provide enough accuracy to calculate all allowed transitions between energy bands that are very crucial for investigating the linear and nonlinear optical properties of monolayer MoS2.

  18. Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

    Science.gov (United States)

    Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Goumri-Said, Souraya; Tahir, S. A.

    2018-05-01

    Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.

  19. Electronic materials with a wide band gap: recent developments

    Directory of Open Access Journals (Sweden)

    Detlef Klimm

    2014-09-01

    Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.

  20. ELECTRONIC-STRUCTURE OF THE MISFIT-LAYER COMPOUND (SNS)(1.17)NBS2 DEDUCED FROM BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTRA

    NARCIS (Netherlands)

    FANG, CM; ETTEMA, ARHF; HAAS, C; WIEGERS, GA; VANLEUKEN, H; DEGROOT, RA

    1995-01-01

    In order to understand the electronic structure of the misfit-layer compound (SnS)(1.17)NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)(1.20)NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with

  1. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  2. Engineering flat electronic bands in quasiperiodic and fractal loop geometries

    Energy Technology Data Exchange (ETDEWEB)

    Nandy, Atanu, E-mail: atanunandy1989@gmail.com; Chakrabarti, Arunava, E-mail: arunava_chakrabarti@yahoo.co.in

    2015-11-06

    Exact construction of one electron eigenstates with flat, non-dispersive bands, and localized over clusters of various sizes is reported for a class of quasi-one-dimensional looped networks. Quasiperiodic Fibonacci and Berker fractal geometries are embedded in the arms of the loop threaded by a uniform magnetic flux. We work out an analytical scheme to unravel the localized single particle states pinned at various atomic sites or over clusters of them. The magnetic field is varied to control, in a subtle way, the extent of localization and the location of the flat band states in energy space. In addition to this we show that an appropriate tuning of the field can lead to a re-entrant behavior of the effective mass of the electron in a band, with a periodic flip in its sign. - Highlights: • Exact construction of eigenstates with flat and dispersive bands is reported. • Competition between translational order and growth of aperiodicity is discussed. • The effect of magnetic field on the location of flat band states is shown. • Flux tunable re-entrant behavior of the effective mass of electron is studied.

  3. Generation of nanosecond S band microwave pulses based on superradiance

    International Nuclear Information System (INIS)

    Ginzburg, N.S.; Zotova, I.V.; Rozental, R.M.

    2002-01-01

    Modeling carried out demonstrates possibility of generation of gigawatt power level S band microwave pulse with duration of several nanoseconds using superradiation of short electron beam moving along slow-wave periodical structure. A 10 ns / 500 keV / 5 kA accelerator of Kanazawa University can be used in such experiments. It is shown that significant increasing peak power can be obtained by optimization of voltage and current pulses waveforms. Required increasing of electron energy and current by the end of electron pulse can be achieved by using self-acceleration of a short beam passing through a system of passive cavities. (author)

  4. Generation of nanosecond S band microwave pulses based on superradiance

    Energy Technology Data Exchange (ETDEWEB)

    Ginzburg, N.S.; Zotova, I.V.; Rozental, R.M. [Russian Academy of Science, Institute of Applied Physics, Nizhny Novgorod (RU)] [and others

    2002-06-01

    Modeling carried out demonstrates possibility of generation of gigawatt power level S band microwave pulse with duration of several nanoseconds using superradiation of short electron beam moving along slow-wave periodical structure. A 10 ns / 500 keV / 5 kA accelerator of Kanazawa University can be used in such experiments. It is shown that significant increasing peak power can be obtained by optimization of voltage and current pulses waveforms. Required increasing of electron energy and current by the end of electron pulse can be achieved by using self-acceleration of a short beam passing through a system of passive cavities. (author)

  5. Compton profiles and band structure calculations of CdS and CdTe

    International Nuclear Information System (INIS)

    Heda, N.L.; Mathur, S.; Ahuja, B.L.; Sharma, B.K.

    2007-01-01

    In this paper we present the isotropic Compton profiles of zinc-blende CdS and CdTe measured at an intermediate resolution of 0.39 a.u. using our 20 Ci 137 Cs Compton spectrometer. The electronic band structure calculations for both the zinc-blende structure compounds and also wurtzite CdS have been undertaken using various schemes of ab-initio linear combination of atomic orbitals calculations implemented in CRYSTAL03 code. The band structure and Mulliken's populations are reported using density functional scheme. In case of wurtzite CdS, our theoretical anisotropies in directional Compton profiles are compared with available experimental data. In case of both the zinc-blende compounds, the isotropic experimental profiles are found to be in better agreement with the present Hartree-Fock calculations. A study of the equal-valence-electron-density experimental profiles of zinc-blende CdS and CdTe shows that the CdS is more ionic than CdTe. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Compact free-electron laser at the Los Alamos National Laboratory

    International Nuclear Information System (INIS)

    Chan, K.C.D.; Meier, K.L.; Nguyen, D.; Sheffield, R.L.; Wang, Tai-Sen F.; Warren, R.W.; Wilson, W.L.; Young, L.M.

    1991-01-01

    The design and construction of second-generation free-electron laser (FEL) system at Los Alamos will be described. comprising state-of-the art components, this FEL system will be sufficiently compact, robust and user-friendly for application in industry, medicine, and research. 11 refs., 11 figs., 2 tabs

  7. X-band rf driven free electron laser driver with optics linearization

    Directory of Open Access Journals (Sweden)

    Yipeng Sun (孙一鹏

    2014-11-01

    Full Text Available In this paper, a compact hard X-ray free electron lasers (FEL design is proposed with all X-band rf acceleration and two stage bunch compression. It eliminates the need of a harmonic rf linearization section by employing optics linearization in its first stage bunch compression. Quadrupoles and sextupoles are employed in a bunch compressor one (BC1 design, in such a way that second order longitudinal dispersion of BC1 cancels the second order energy correlation in the electron beam. Start-to-end 6-D simulations are performed with all the collective effects included. Emittance growth in the horizontal plane due to coherent synchrotron radiation is investigated and minimized, to be on a similar level with the successfully operating Linac coherent light source (LCLS. At a FEL radiation wavelength of 0.15 nm, a saturation length of 40 meters can be achieved by employing an undulator with a period of 1.5 cm. Without tapering, a FEL radiation power above 10 GW is achieved with a photon pulse length of 50 fs, which is LCLS-like performance. The overall length of the accelerator plus undulator is around 250 meters which is much shorter than the LCLS length of 1230 meters. That makes it possible to build hard X-ray FEL in a laboratory with limited size.

  8. A compact broadband high efficient X-band 9-watt PHEMT MMIC high-power amplifier for phased array radar applications

    NARCIS (Netherlands)

    Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hulsmann, A.

    1999-01-01

    ln this paper the development and measurement results of a compact broadband 9-Watt high efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the art performance: an average ouput power of 9 Watt, a gain of 20 dB and an average Power Added

  9. Band gap engineering of MoS{sub 2} upon compression

    Energy Technology Data Exchange (ETDEWEB)

    López-Suárez, Miquel, E-mail: miquel.lopez@nipslab.org [NiPS Laboratory, Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, 06123 Perugia (Italy); Neri, Igor [NiPS Laboratory, Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, 06123 Perugia (Italy); INFN Sezione di Perugia, via Pascoli, 06123 Perugia (Italy); Rurali, Riccardo [Institut de Ciència de Materials de Barcelona (ICMAB–CSIC) Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

    2016-04-28

    Molybdenum disulfide (MoS{sub 2}) is a promising candidate for 2D nanoelectronic devices, which shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS{sub 2} upon both compressive and tensile strains with first-principles density-functional calculations for different number of layers. The results show that the band-gap can be engineered for experimentally attainable strains (i.e., ±0.15). However, compressive strain can result in bucking that can prevent the use of large compressive strain. We then studied the stability of the compression, calculating the critical strain that results in the on-set of buckling for free-standing nanoribbons of different lengths. The results demonstrate that short structures, or few-layer MoS{sub 2}, show semi-conductor to metal transition upon compressive strain without bucking.

  10. Development of small C-band standing-wave accelerator structure

    International Nuclear Information System (INIS)

    Miura, S.; Takahashi, A.; Hisanaga, N.; Sekido, H.; Yoshizumi, A.

    2000-01-01

    We have newly developed a compact C-band (5712 MHz) standing-wave accelerator for the medical product/waste sterilization applications. The accelerator consists of an electron gun operating at 25 kV DC followed by a single-cell pre-buncher and 3-cell buncher section, and 11-cell of the side-coupled standing-wave accelerating structure. The total length including the electron gun is about 600 mm. The first high-power test was performed in March 2000, where the accelerator successively generated the electron beam of 9 MeV energy and 160 mA peak-current at 3.8 MW RF input power. Mitsubishi Heavy Industry starts to serve the sterilization systems using C-band accelerator reported here, and also supplies the accelerator components for the medical oncology applications. (author)

  11. Investigation of the Capability of Compact Polarimetric SAR Interferometry to Estimate Forest Height

    Science.gov (United States)

    Zhang, Hong; Xie, Lei; Wang, Chao; Chen, Jiehong

    2013-08-01

    The main objective of this paper is to investigate the capability of compact Polarimetric SAR Interferometry (C-PolInSAR) on forest height estimation. For this, the pseudo fully polarimetric interferomteric (F-PolInSAR) covariance matrix is firstly reconstructed, then the three- stage inversion algorithm, hybrid algorithm, Music and Capon algorithm are applied to both C-PolInSAR covariance matrix and pseudo F-PolInSAR covariance matrix. The availability of forest height estimation is demonstrated using L-band data generated by simulator PolSARProSim and X-band airborne data acquired by East China Research Institute of Electronic Engineering, China Electronics Technology Group Corporation.

  12. S-band 45 MW peak power test facility at RRCAT

    International Nuclear Information System (INIS)

    Wanmode, A. Yashwant; Reddy, Sivananda; Mulchandani, J.; Mohania, Praveen; Shrivastava, B. Purushottam

    2015-01-01

    RRCAT is engaged in the design and development of high energy electron LINAC as future injectors for the Booster Synchrotron for Indus-1 and Indus-2 SRS. The high energy LINAC will need microwave power over 30 MW depending on the number of structures to be energized. In order to have advance preparations for this development a 45 MW S-Band test facility has been designed and developed at RRCAT. The test stand is built around a 45 MW peak power S-band pulsed klystron, A conventional pulse forming network based modulator for klystron has been designed and developed. The WR-284 waveguide transmission system consisting of dual directional couplers, SF 6 gas pressurization unit, high power waveguide load and arc sensor has been developed and interfaced with the klystron. The klystron has been successfully tested up to 30 MW peak power at 2856 MHz on SF 6 pressurized waveguide line. A solid state S Band driver amplifier up to 1 kW output power was designed developed for driving the klystron. This paper describes the results of 30 MW peak power test of this facility. (author)

  13. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  14. Design of a compact application-oriented free-electron laser

    International Nuclear Information System (INIS)

    Chan, K.C.D.; Meier, K.; Nguyen, D.; Sheffield, R.; Wang, T.S.; Warren, R.W.; Wilson, W.; Young, L.M.

    1992-01-01

    The goal of the Advanced Free-Electron Laser Project at the Los Alamos National Laboratory is to demonstrate that a free-electron laser (FEL) suitable for industrial, medical, and research applications can be built. This FEL system should be efficient, compact, robust, and user-friendly. To achieve this goal, we have incorporated advanced components presently available. Electrons produced by a photoelectron source are accelerated to 20 MeV by a high-brightness accelerator. They are transported by an emittance-preserving beamline with permanent-magnet quadrupoles and dipoles. The electron beam has excellent instantaneous beam quality better than: 2.5 π mm mrad in transverse emittance and 0.3% in energy spread at a Peak current up to 310 A. It is used to excite a FEL oscillator with a pulsed-current microwiggler. Including operation at higher harmonics, the laser wavelength extends from 3.7 μm to 0.4 μm

  15. Design of a compact application-oriented free-electron laser

    Science.gov (United States)

    Chan, K. C. D.; Meier, K.; Nguyen, D.; Sheffield, R.; Wang, T. S.; Warren, R. W.; Wilson, W.; Young, L. M.

    The goal of the Advanced Free-Electron Laser Project at the Los Alamos National Laboratory is to demonstrate that a free-electron laser (FEL) suitable for industrial, medical, and research applications can be built. This FEL system should be efficient, compact, robust, and user-friendly. To achieve this goal, we have incorporated advanced components presently available. Electrons produced by a photoelectron source are accelerated to 20 MeV by a high-brightness accelerator. They are transported by an emittance-preserving beamline with permanent-magnet quadrupoles and dipoles. The electron beam has excellent instantaneous beam quality better than: 2.5 (pi) mm mrad in transverse emittance and 0.3 percent in energy spread at a Peak current up to 310 A. It is used to excite a FEL oscillator with a pulsed-current microwiggler. Including operation at higher harmonics, the laser wavelength extends from 3.7 to 0.4 microns.

  16. Compact Planar Ultrawideband Antennas with 3.5/5.2/5.8 GHz Triple Band-Notched Characteristics for Internet of Things Applications.

    Science.gov (United States)

    Dong, Jian; Li, Qianqian; Deng, Lianwen

    2017-02-10

    Ultrawideband (UWB) antennas, as core devices in high-speed wireless communication, are widely applied to mobile handsets, wireless sensor networks, and Internet of Things (IoT). A compact printed monopole antenna for UWB applications with triple band-notched characteristics is proposed in this paper. The antenna has a very compact size of 10 x 16 mm2 and is composed of a square slotted radiation patch and a narrow rectangular ground plane on the back of the substrate. First, by etching a pair of inverted T-shaped slots at the bottom of the radiation patch, one notched band at 5-6 GHz for rejecting the Wireless Local Area Network (WLAN) is generated. Then, by cutting a comb-shaped slot on the top of the radiation patch, a second notched band for rejecting 3.5 GHz Worldwide Interoperability for Microwave Access (WiMAX) is obtained. Further, by cutting a pair of rectangular slots and a C-shaped slot as well as adding a pair of small square parasitic patches at the center of the radiating patch, two separate notched bands for rejecting 5.2 GHz lower WLAN and 5.8 GHz upper WLAN are realized, respectively. Additionally, by integrating the slotted radiation patch with the narrow rectangular ground plane, an enhanced impedance bandwidth can be achieved, especially at the higher band. The antenna consists of linear symmetrical sections only and is easy for fabrication and fine-tuning. The measured results show that the designed antenna provides a wide impedance bandwidth of 150% from 2.12 to 14.80 GHz for VSWR applications.

  17. Electronic structure of SnS deduced from photoelectron spectra and band-structure calculations

    NARCIS (Netherlands)

    Ettema, A.R.H.F.; Groot, R.A. de; Haas, C.; Turner, T.S.

    1992-01-01

    SnS is a layer compound with a phase transition from a high-temperature β phase to a low-temperature α phase with a lower symmetry. Ab initio band-structure calculations are presented for both phases. The calculations show that the charge distributions in the two phases are very similar. However,

  18. Development and application of compact and on-chip electron linear accelerators for dynamic tracking cancer therapy and DNA damage/repair analysis

    Science.gov (United States)

    Uesaka, M.; Demachi, K.; Fujiwara, T.; Dobashi, K.; Fujisawa, H.; Chhatkuli, R. B.; Tsuda, A.; Tanaka, S.; Matsumura, Y.; Otsuki, S.; Kusano, J.; Yamamoto, M.; Nakamura, N.; Tanabe, E.; Koyama, K.; Yoshida, M.; Fujimori, R.; Yasui, A.

    2015-06-01

    We are developing compact electron linear accelerators (hereafter linac) with high RF (Radio Frequency) frequency (9.3 GHz, wavelength 32.3 mm) of X-band and applying to medicine and non-destructive testing. Especially, potable 950 keV and 3.95 MeV linac X-ray sources have been developed for on-site transmission testing at several industrial plants and civil infrastructures including bridges. 6 MeV linac have been made for pinpoint X-ray dynamic tracking cancer therapy. The length of the accelerating tube is ∼600 mm. The electron beam size at the X-ray target is less than 1 mm and X-ray spot size at the cancer is less than 3 mm. Several hardware and software are under construction for dynamic tracking therapy for moving lung cancer. Moreover, as an ultimate compact linac, we are designing and manufacturing a laser dielectric linac of ∼1 MeV with Yr fiber laser (283 THz, wavelength 1.06 pm). Since the wavelength is 1.06 μm, the length of one accelerating strcture is tens pm and the electron beam size is in sub-micro meter. Since the sizes of cell and nuclear are about 10 and 1 μm, respectively, we plan to use this “On-chip” linac for radiation-induced DNA damage/repair analysis. We are thinking a system where DNA in a nucleus of cell is hit by ∼1 μm electron or X-ray beam and observe its repair by proteins and enzymes in live cells in-situ.

  19. Dynamic shock compaction of a ZrO2-RuO2 electronic nanocomposite: toward functionally graded materials

    NARCIS (Netherlands)

    van Zyl, W.E.; Carton, Erik P.; Raming, T.P.; ten Elshof, Johan E.; Verweij, H.

    2005-01-01

    An electronic ZrO2-RuO2 nanocomposite was fabricated by dynamic compaction (DC) at 1.5 GPa resulting in a maximum relative density of 88% in the material. The DC process formed pristine elongated conical-shaped compacts 3 cm in length. The compacts retained their original nanometer-sized grains (~20

  20. Lanthanide 4f-electron binding energies and the nephelauxetic effect in wide band gap compounds

    International Nuclear Information System (INIS)

    Dorenbos, Pieter

    2013-01-01

    Employing data from luminescence spectroscopy, the inter 4f-electron Coulomb repulsion energy U(6, A) in Eu 2+/3+ impurities together with the 5d-centroid energy shift ϵ c (1,3+,A) in Ce 3+ impurities in 40 different fluoride, chloride, bromide, iodide, oxide, sulfide, and nitride compounds has been determined. This work demonstrates that the chemical environment A affects the two energies in a similar fashion; a fashion that follows the anion nephelauxetic sequence F, O, Cl, Br, N, I, S, Se. One may then calculate U(6, A) from well established and accurate ϵ c (1,3+,A) values which are then used as input to the chemical shift model proposed in Dorenbos (2012) [19]. As output it provides the chemical shift of 4f-electron binding energy and therewith the 4f-electron binding energy relative to the vacuum energy. In addition this method provides a tool to routinely establish the binding energy of electrons at the top of the valence band (work function) and the bottom of the conduction band (electron affinity) throughout the entire family of inorganic compounds. How the electronic structure of the compound and lanthanide impurities therein change with type of compound and type of lanthanide is demonstrated. -- Highlights: ► A relationship between 5d centroid shift and 4f-electron Coulomb repulsion energy is established. ► Information on the absolute 4f-electron binding energy of lanthanides in 40 compounds is provided. ► A new tool to determine absolute binding energies of electrons in valence and conduction bands is demonstrated

  1. Design of a high repetition rate S-band photocathode gun

    International Nuclear Information System (INIS)

    Han Janghui; Cox, Matthew; Huang, Houcheng; Pande, Shivaji

    2011-01-01

    Photocathode RF guns have been developed in many laboratories for generating high quality electron beams for free-electron lasers based on linear accelerators. Such guns can generate electron beams with an exceptionally high peak current as well as a small transverse emittance. Their applications have been recently expanded for ultrafast electron diffraction, coherent terahertz radiation, and X-ray or γ-ray radiation by Compton scattering. In this paper, we design an S-band normal-conducting gun with capabilities of high quality beam generation and high repetition rate operation. The RF design and thermal analysis of the gun cavity and coupler are introduced. Optimal position of the gun focusing solenoid for low emittance beam generation is found by performing particle tracking simulations. Then, the gun system is designed to be able to afford the optimal solenoid position. The cooling-water channel surrounding the gun cavity and coupler is designed and analyzed numerically. The pressure in the gun is simulated with a vacuum model containing the detailed inner structure of the gun. An injector for a free-electron laser application is designed by using this gun and the beam dynamics simulation is shown. A cold test with a prototype gun for confirmation of the RF design is reported. - Highlights: → We design an S-band gun for low emittance beam generation and high repetition rate operation. → The RF design and thermal analysis of the gun cavity and coupler are studied. → An FEL injector is designed by using this gun and the beam dynamics simulation is shown. → A cold test with a prototype gun for confirmation of the RF design is reported.

  2. Ab Initio factorized LCAO calculations of the electronic band structure of ZnSe, ZnS, and the (ZnSe)1(ZnS)1 strained-layer superlattice

    International Nuclear Information System (INIS)

    Marshall, T.S.; Wilson, T.M.

    1992-01-01

    The authors report on the results of electronic band structure calculations of bulk ZnSe, bulk ZnS and the (ZnSe) 1 (ZnS) 1 , strained-layer superlattice (SLS) using the ab initio factorized linear combination of atomic orbitals method. The bulk calculations were done using the standard primitive nonrectangular 2-atom zinc blende unit cell, while the SLS calculation was done using a primitive tetragonal 4-atom unit cell modeled from the CuAu I structure. The analytic fit to the SLS crystalline potential was determined by using the nonlinear coefficients from the bulk fits. The CPU time saved by factorizing the energy matrix integrals and using a rectangular unit cell is discussed

  3. Band structure of an electron in a kind of periodic potentials with singularities

    Science.gov (United States)

    Hai, Kuo; Yu, Ning; Jia, Jiangping

    2018-06-01

    Noninteracting electrons in some crystals may experience periodic potentials with singularities and the governing Schrödinger equation cannot be defined at the singular points. The band structure of a single electron in such a one-dimensional crystal has been calculated by using an equivalent integral form of the Schrödinger equation. Both the perturbed and exact solutions are constructed respectively for the cases of a general singular weak-periodic system and its an exactly solvable version, Kronig-Penney model. Any one of them leads to a special band structure of the energy-dependent parameter, which results in an effective correction to the previous energy-band structure and gives a new explanation for forming the band structure. The used method and obtained results could be a valuable aid in the study of energy bands in solid-state physics, and the new explanation may trigger investigation to different physical mechanism of electron band structures.

  4. First-principles study of spin-polarized electronic band structures in ferromagnetic Zn1-xTMxS (TM = Fe, Co and Ni)

    KAUST Repository

    Saeed, Yasir

    2010-10-01

    We report a first-principles study of structural, electronic and magnetic properties of crystalline alloys Zn1-xTMxS (TM = Fe, Co and Ni) at x = 0.25. Structural properties are computed from the total ground state energy convergence and it is found that the cohesive energies of Zn 1-xTMxS are greater than that of zincblende ZnS. We also study the spin-polarized electronic band structures, total and partial density of states and the effect of TM 3d states. Our results exhibit that Zn 0.75Fe0.25S, Zn0.75Co0.25S and Zn0.75Ni0.25S are half-metallic ferromagnetic with a magnetic moment of 4μB, 3μB and 2μB, respectively. Furthermore, we calculate the TM 3d spin-exchange-splitting energies Δx (d), Δx (x-d), exchange constants N0α and N0β, crystal field splitting (ΔEcrystEt2g-Eeg), and find that p-d hybridization reduces the local magnetic moment of TM from its free space charge value. Moreover, robustness of Zn1-xTMxS with respect to the variation of lattice constants is also discussed. © 2010 Elsevier B.V. All rights reserved.

  5. Terra MODIS Band 27 Electronic Crosstalk Effect and Its Removal

    Science.gov (United States)

    Sun, Junqiang; Xiong, Xiaoxiong; Madhavan, Sriharsha; Wenny, Brian

    2012-01-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the NASA Earth Observing System (EOS). The first MODIS instrument was launched in December, 1999 on-board the Terra spacecraft. MODIS has 36 bands, covering a wavelength range from 0.4 micron to 14.4 micron. MODIS band 27 (6.72 micron) is a water vapor band, which is designed to be insensitive to Earth surface features. In recent Earth View (EV) images of Terra band 27, surface feature contamination is clearly seen and striping has become very pronounced. In this paper, it is shown that band 27 is impacted by electronic crosstalk from bands 28-30. An algorithm using a linear approximation is developed to correct the crosstalk effect. The crosstalk coefficients are derived from Terra MODIS lunar observations. They show that the crosstalk is strongly detector dependent and the crosstalk pattern has changed dramatically since launch. The crosstalk contributions are positive to the instrument response of band 27 early in the mission but became negative and much larger in magnitude at later stages of the mission for most detectors of the band. The algorithm is applied to both Black Body (BB) calibration and MODIS L1B products. With the crosstalk effect removed, the calibration coefficients of Terra MODIS band 27 derived from the BB show that the detector differences become smaller. With the algorithm applied to MODIS L1B products, the Earth surface features are significantly removed and the striping is substantially reduced in the images of the band. The approach developed in this report for removal of the electronic crosstalk effect can be applied to other MODIS bands if similar crosstalk behaviors occur.

  6. A multi-band, multi-level, multi-electron model for efficient FDTD simulations of electromagnetic interactions with semiconductor quantum wells

    Science.gov (United States)

    Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

    2015-08-01

    We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite-difference time-domain method. The presented model is based on an approach of spanning a large number of electron transverse momentum states in each SQW sub-band (multi-band) with a small number of discrete multi-electron states (multi-level, multi-electron). This enables accurate and efficient two-dimensional (2-D) and three-dimensional (3-D) simulations of nanophotonic devices with SQW active media. The model includes the following features: (1) Optically induced interband transitions between various SQW conduction and heavy-hole or light-hole sub-bands are considered. (2) Novel intra sub-band and inter sub-band transition terms are derived to thermalize the electron and hole occupational distributions to the correct Fermi-Dirac distributions. (3) The terms in (2) result in an explicit update scheme which circumvents numerically cumbersome iterative procedures. This significantly augments computational efficiency. (4) Explicit update terms to account for carrier leakage to unconfined states are derived, which thermalize the bulk and SQW populations to a common quasi-equilibrium Fermi-Dirac distribution. (5) Auger recombination and intervalence band absorption are included. The model is validated by comparisons to analytic band-filling calculations, simulations of SQW optical gain spectra, and photonic crystal lasers.

  7. X-Band CubeSat Communication System Demonstration

    Science.gov (United States)

    Altunc, Serhat; Kegege, Obadiah; Bundick, Steve; Shaw, Harry; Schaire, Scott; Bussey, George; Crum, Gary; Burke, Jacob C.; Palo, Scott; O'Conor, Darren

    2015-01-01

    Today's CubeSats mostly operate their communications at UHF- and S-band frequencies. UHF band is presently crowded, thus downlink communications are at lower data rates due to bandwidth limitations and are unreliable due to interference. This research presents an end-to-end robust, innovative, compact, efficient and low cost S-band uplink and X-band downlink CubeSat communication system demonstration between a balloon and a Near Earth Network (NEN) ground system. Since communication systems serve as umbilical cords for space missions, demonstration of this X-band communication system is critical for successfully supporting current and future CubeSat communication needs. This research has three main objectives. The first objective is to design, simulate, and test a CubeSat S- and X-band communication system. Satellite Tool Kit (STK) dynamic link budget calculations and HFSS Simulations and modeling results have been used to trade the merit of various designs for small satellite applications. S- and X-band antennas have been tested in the compact antenna test range at Goddard Space Flight Center (GSFC) to gather radiation pattern data. The second objective is simulate and test a CubeSat compatible X-band communication system at 12.5Mbps including S-band antennas, X-band antennas, Laboratory for Atmospheric and Space Physics (LASP) /GSFC transmitter and an S-band receiver from TRL-5 to TRL-8 by the end of this effort. Different X-band communication system components (antennas, diplexers, etc.) from GSFC, other NASA centers, universities, and private companies have been investigated and traded, and a complete component list for the communication system baseline has been developed by performing analytical and numerical analysis. This objective also includes running simulations and performing trades between different X-band antenna systems to optimize communication system performance. The final objective is to perform an end-to-end X-band CubeSat communication system

  8. Electron cyclotron emission from optically thin plasma in compact helical system

    International Nuclear Information System (INIS)

    Idei, Hiroshi; Kubo, Shin; Hosokawa, Minoru; Iguchi, Harukazu; Ohkubo, Kunizo; Sato, Teruyuki.

    1994-01-01

    A frequency spectrum of second harmonic electron cyclotron emission was observed for an optically thin plasma produced by fundamental electron cyclotron heating in a compact helical system. A radial electron temperature profile deduced from this spectrum neglecting the multiple reflections effect shows a clear difference from that measured by Thomson scattering. We relate the spectrum with the electron temperature profile by the modified emission model including the scrambling effect. The scrambling effect results from both mode conversion and change in the trajectory due to multiple reflections of the emitting ray at the vessel wall. The difference between the two temperature profiles is explained well by using the modified emission model. Reconstruction of the electron temperature profile from the spectrum using this model is also discussed. (author)

  9. Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending.

    Science.gov (United States)

    Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung; Li, Lain-Jong; Shih, Chih-Kang

    2014-05-14

    Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer MoS2 is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS2. In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

  10. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Riley E., E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Young, Matthew; Dameron, Arrelaine; Teeter, Glenn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Park, Helen Hejin; Chua, Danny; Gordon, Roy G. [Harvard University, Cambridge, Massachusetts 02139 (United States)

    2014-12-29

    The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

  11. Design of 6 MeV X-band electron linac for dual-head gantry radiotherapy system

    Science.gov (United States)

    Shin, Seung-wook; Lee, Seung-Hyun; Lee, Jong-Chul; Kim, Huisu; Ha, Donghyup; Ghergherehchi, Mitra; Chai, Jongseo; Lee, Byung-no; Chae, Moonsik

    2017-12-01

    A compact 6 MeV electron linac is being developed at Sungkyunkwan University, in collaboration with the Korea atomic energy research institute (KAERI). The linac will be used as an X-ray source for a dual-head gantry radiotherapy system. X-band technology has been employed to satisfy the size requirement of the dual-head gantry radiotherapy machine. Among the several options available, we selected a pi/2-mode, standing-wave, side-coupled cavity. This choice of radiofrequency (RF) cavity design is intended to enhance the shunt impedance of each cavity in the linac. An optimum structure of the RF cavity with a high-performance design was determined by applying a genetic algorithm during the optimization procedure. This paper describes the detailed design process for a single normal RF cavity and the entire structure, including the RF power coupler and coupling cavity, as well as the beam dynamics results.

  12. Dual-Band Compact Planar Antenna for a Low-Cost WLAN USB Dongle

    Directory of Open Access Journals (Sweden)

    Maurício Henrique Costa Dias

    2014-01-01

    Full Text Available Among the present technologies for WLAN devices, USB dongles still play a noticeable role. One major design challenge regards the antenna, which unavoidably has to comply with a very small volume available and sometimes should also allow multiband operation. In this scope, the present work discusses a dual-band WiFi compact planar IFA-based antenna design for a low-cost USB dongle application. Like most of the related published solutions, the methodology for deriving the present proposition was assisted by the use of an antenna analysis software. A prototype was assembled and tested in order to qualify the radiator design. Practical operation conditions were considered in the tests, such as the influence of the dongle case and the effect of the notebook itself. The results complied with the design constraints, presenting an impedance match quite stable regardless of the stick position alongside a laptop base.

  13. Topological strings on compact Calabi-Yau's

    Energy Technology Data Exchange (ETDEWEB)

    Hollands, Lotte, E-mail: lhollands@science.uva.nl

    2007-09-15

    Some steps towards solving topological string amplitudes on Calabi-Yau spaces have been taken lately: all-genus amplitudes have been computed for non-compact toric Calabi-Yau threefolds, local Riemann surfaces and K3-fibrations, while progression has been made for the Fermat quintic threefold. However, the building blocks of all-genus topological string amplitudes for general compact Calabi-Yau's remain unknown. We study some aspects of the underlying geometry and discuss difficulties.

  14. Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

    Directory of Open Access Journals (Sweden)

    Sung Heo

    2015-07-01

    Full Text Available The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS and high-energy resolution REELS (HR-REELS. HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS energy was located at approximately 4.2 eV above the valence band maximum (VBM and the surface band gap width (EgS was approximately 6.3 eV. The bulk F center (FB energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were FS and FB, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.

  15. Ka-Band Electronically Steered CubeSat Antenna, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Kymeta Government Solutions (KGS) designed, analyzed, built, tested, and delivered a small, lightweight, low-cost, low-power electronically steered Ka-band prototype...

  16. Operation with the low momentum compaction factor on an electron storage ring

    International Nuclear Information System (INIS)

    Hama, H.; Yamazaki, J.; Nakamura, E.; Isoyama, G.

    1994-01-01

    We have studied quasi-isochronous operation with the low momentum compaction factor to reduce the bunch length of the electron beam on the UVSOR storage ring. The momentum compaction factor α was reduced by changing the dispersion function in the bending magnets. Though effect of the second order α becomes dominant in the very low α region, we could compensate it by reducing strength of the focusing sextupole magnets. The momentum compaction factor was reduced to less than one hundredth with respect to the ordinary value. Using a streak camera, we measured the very short bunch, and confirmed the storage ring was operated nearly isochronously. The beam current dependence of the bunch length was also measured. The bunch lengthening was interpreted by potential-well distortion theory with a constant value of the effective longitudinal coupling impedance over the wide range of α. (author)

  17. Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy.

    Science.gov (United States)

    Jobst, Johannes; van der Torren, Alexander J H; Krasovskii, Eugene E; Balgley, Jesse; Dean, Cory R; Tromp, Rudolf M; van der Molen, Sense Jan

    2016-11-29

    High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

  18. The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

    Science.gov (United States)

    Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

    2014-12-01

    The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefers to replace the tin atom at the Sn1 site rather than the Sn2 site, the resistivity of Co3SnInS2 shows semiconducting-like behavior. In this study we have demonstrated that metallic behavior and a decrease in resistivity for Se-doped Co3SnInS2 occurs without suppression of the Seebeck coefficient. From the DFT calculations, when the selenium content is above 0.5, the total crystallographic energy shows that a higher indium occupancy at Sn2 site is more stable. Therefore, it is suggested that the selenium doping suppress the site preference for indium substitution. This is one of the possible explanations for the metallic conductivity observed in Se-doped Co3SnInS2

  19. Implementation and Investigation of a Compact Circular Wide Slot UWB Antenna with Dual Notched Band Characteristics using Stepped Impedance Resonators

    Directory of Open Access Journals (Sweden)

    Yingsong Li

    2012-04-01

    Full Text Available A coplanar waveguide (CPW fed ultra-wideband (UWB antenna with dual notched band characteristics is presented in this paper. The circular wide slot and circular radiation patch are utilized to broaden the impedance bandwidth of the UWB antenna. The dual notched band functions are achieved by employing two stepped impedance resonators (SIRs which etched on the circular radiation patch and CPW excitation line, respectively. The two notched bands can be controlled by adjusting the dimensions of the two stepped impedance resonators which give tunable notched band functions. The proposed dual notched band UWB antenna has been designed in details and optimized by means of HFSS. Experimental and numerical results show that the proposed antenna with compact size of 32 × 24 mm2, has an impedance bandwidth range from 2.8 GHz to 13.5 Hz for voltage standing-wave ratio (VSWR less than 2, except the notch bands 5.0 GHz - 6.2 GHz for HIPERLAN/2 and IEEE 802.11a (5.1 GHz - 5.9 GHz and 8.0 GHz - 9.3 GHz for satellite and military applications.

  20. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator.

    Science.gov (United States)

    Balcı, Erdem; Akkuş, Ünal Özden; Berber, Savas

    2018-04-18

    The electronic structures of Si and Ge substitutionally doped Sc 2 C(OH) 2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc 2 C(OH) 2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  1. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator

    Science.gov (United States)

    Balcı, Erdem; Özden Akkuş, Ünal; Berber, Savas

    2018-04-01

    The electronic structures of Si and Ge substitutionally doped Sc2C(OH)2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc2C(OH)2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  2. Modelling and validation of a simple and compact wide upper stop band ultra-wideband bandpass filter

    Directory of Open Access Journals (Sweden)

    Somdotta Roy Choudhury

    2014-09-01

    Full Text Available A compact ultra-wideband (UWB bandpass filter (BPF is proposed based on end coupled microstrip transmission line, defected ground structure and defected microstrip structure. The experimental filter shows a fractional bandwidth of 110% at a centre frequency, with two observable transmission zeros (attenuation poles at 2.1 and 11.7 GHz. Measured results exhibit an UWB passband from 3.02 to 10.6 GHz with mid-band insertion loss of 1.8 dB and group delay variation <0.45 ns. The BPF achieves a wide stopband with < −18 dB attenuation up to 20 GHz.

  3. Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

    DEFF Research Database (Denmark)

    Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

    2017-01-01

    The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

  4. Design of a Compact Planar Rectenna for Wireless Power Transfer in the ISM Band

    Directory of Open Access Journals (Sweden)

    Fang Zhang

    2014-01-01

    Full Text Available This paper presents a compact planar rectenna with high conversion efficiency in the ISM band. The proposed rectenna is developed by the decomposing of a planar rectenna topology into two functional parts and then recombining the two parts into a new topology to make the rectenna size reduction. The operation mechanism of the antenna and rectifying circuit in the proposed novel topology is explained and the design methodology is presented in detail. The proposed topology not only reduces the rectenna design cycle time but also leads to easy realization at the required frequency ranges with a very low cost. For validation, a 2.45 GHz rectenna system is designed and measured to show their microwave performances.

  5. Design, construction and tuning of S-band coupler for electron linear accelerator of institute for research in fundamental sciences (IPM E-linac)

    International Nuclear Information System (INIS)

    Ghasemi, F.; Abbasi Davani, F.; Lamehi Rachti, M.; Shaker, H.; Ahmadiannamin, S.

    2015-01-01

    Design and construction of an electron linear accelerator by Institute for Research in Fundamental Science (IPM) is considered as Iran’s first attempt to construct such an accelerator. In order to design a linear accelerating tube, after defining the accelerating tube and buncher geometries, RF input and output couplers must be designed. In this article, firstly, a brief report on the specifications of an S-band electron linear accelerator which is in progress in the school of particles and accelerators is presented and then, the design process and construction reports of the couplers required for this accelerator are described. Through performing necessary calculations and tuning the coupling factor and resonant frequency, couplers with desired specification have been fabricated by shrinking method. The final obtained coupling factor and resonant frequency have been respectively 1.05 and 2997 MHz for the first coupler, and 0.98 and 2996.9 MHz for the second one that are close to calculation results

  6. Status of the Northrop Grumman Compact Infrared Free-Electron Laser

    International Nuclear Information System (INIS)

    Lehrman, I.S.; Krishnaswamy, J.; Hartley, R.A.

    1995-01-01

    The Compact Infrared Free Electron Laser (CIRFEL) was built as part of a joint collaboration between the Northrop Grumman Corporation and Princeton University to develop FEL's for use by researchers in the materials, medical and physical sciences. The CIRFEL was designed to lase in the Mid-IR and Far-IR regimes with picosecond pulses, megawatt level peak powers and an average power of a few watts. The micropulse separation is 7 nsec which allows a number of relaxation phenomenon to be observed. The CIRFEL utilizes an RF photocathode gun to produce high-brightness time synchronized electron bunches. The operational status and experimental results of the CERFEL will be presented

  7. Kinks in the σ band of graphene induced by electron-phonon coupling.

    Science.gov (United States)

    Mazzola, Federico; Wells, Justin W; Yakimova, Rositza; Ulstrup, Søren; Miwa, Jill A; Balog, Richard; Bianchi, Marco; Leandersson, Mats; Adell, Johan; Hofmann, Philip; Balasubramanian, T

    2013-11-22

    Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the σ band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the σ band of graphene that has a binding energy of more than ≈3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of σ states. The existence of the effect suggests a very weak coupling of holes in the σ band not only to the π electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of λ≈1.

  8. Electronic band structure of magnetic bilayer graphene superlattices

    International Nuclear Information System (INIS)

    Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

    2014-01-01

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  9. A PROFILE ANALYSIS OF RAMAN-SCATTERED O VI BANDS AT 6825 Å AND 7082 Å IN SANDULEAK’S STAR

    Energy Technology Data Exchange (ETDEWEB)

    Heo, Jeong-Eun; Lee, Hee-Won [Department of Physics and Astronomy, Sejong University, Seoul (Korea, Republic of); Angeloni, Rodolfo [Gemini Observatory, Casilla 603, La Serena (Chile); Mille, Francesco Di [Las Campanas Observatory, Carnegie Observatories, Casilla 601, La Serena (Chile); Palma, Tali, E-mail: jeung6145@gmail.com [Departamento de Ciencias Físicas, Universidad Andrés Bello, Fernández Concha 700, Las Condes, Santiago (Chile)

    2016-12-20

    We present a detailed modeling of the two broad bands observed at 6825 and 7082 Å in Sanduleak’s star, a controversial object in the Large Magellanic Cloud. These bands are known to originate from Raman scattering of O vi  λ λ 1032 and 1038 photons with atomic hydrogen and are only observed in bona fide symbiotic stars. Our high-resolution spectrum obtained with the Magellan Inamori Kyocera Echelle spectrograph at the Magellan-Clay Telescope reveals, quite surprisingly, that the profiles of the two bands look very different: while the Raman 6825 Å band shows a single broad profile with a redward extended bump, the Raman 7082 Å band exhibits a distinct triple-peak profile. Our model suggests that the O vi emission nebula can be decomposed into a red, blue, and central emission region from an accretion disk, a bipolar outflow, and a further compact, optically thick region. We also perform Monte Carlo simulations with the aim of fitting the observed flux ratio F (6825)/ F (7082) ∼ 4.5, which indicates that the neutral region in Sanduleak’s star is characterized by the column density N{sub Hi} ∼ 1 × 10{sup 23} cm{sup −2}.

  10. Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator

    Science.gov (United States)

    Yang, Z.; Li, X.; Li, J.; Long, J. D.; Lan, C. H.; Wang, T.; Dong, P.; He, J. L.

    2017-03-01

    A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

  11. Towards TeV-scale electron-positron collisions: the Compact Linear Collider (CLIC)

    Science.gov (United States)

    Doebert, Steffen; Sicking, Eva

    2018-02-01

    The Compact Linear Collider (CLIC), a future electron-positron collider at the energy frontier, has the potential to change our understanding of the universe. Proposed to follow the Large Hardron Collider (LHC) programme at CERN, it is conceived for precision measurements as well as for searches for new phenomena.

  12. Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions

    Science.gov (United States)

    Zhang, Chendong; Li, Ming-Yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong; Muller, David A.; Shih, Chih-Kang

    2018-02-01

    Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2-MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2-MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2-MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

  13. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gladysiewicz, M.; Wartak, M. S. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  14. First–principle calculation of the elastic, band structure, electronic states, and optical properties of Cu–doped ZnS nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Lahiji, Mohammadreza Askaripour, E-mail: m.a.lahijiii@gmail.com [Department of applied mathematics, Astaneh Ashrafieh Branch, Islamic Azad University, Astaneh Ashrafieh (Iran, Islamic Republic of); Ziabari, Ali Abdolahzadeh, E-mail: ali.abd.ziabari@gmail.com [Nano Research Lab, Lahijan Branch, Islamic Azad University, P.O. Box: 1616, Lahijan (Iran, Islamic Republic of)

    2016-11-15

    The structural, elastic, electronic, and optical properties of undoped and Cu–doped ZnS nanostructured layers have been studied in the zincblende (ZB) phase, by first–principle approach. Density functional theory (DFT) has been employed to calculate the fundamental properties of the layers using full–potential linearized augmented plane–wave (FPLAPW) method. Mechanical analysis revealed that the bulk modulus increases with the increase of Cu content. Cu doping was found to reduce the band gap value of the material. In addition, DOS effective mass of the electrons and heavy holes was evaluated. Adding Cu caused the decrement/increment of transmission/reflectance of nanolayers in the UV–vis region. The substitution by Cu increased the intensity of the peaks, and a slight red shift was observed in the absorption peak. Moreover, the static dielectric constant, and static refractive index increased with Cu content. The optical conductivity also followed a similar trend to that of the dielectric constants. Energy loss function of the modeled compounds was also evaluated. All calculated parameters were compared with the available experimental and other theoretical results.

  15. Design of an Electronic Chest-Band

    Science.gov (United States)

    Atakan, R.; Acikgoz Tufan, H.; Baskan, H.; Eryuruk, S. H.; Akalin, N.; Kose, H.; Li, Y.; Kursun Bahadir, S.; Kalaoglu, F.

    2017-10-01

    In this study, an electronic chest strap prototype was designed for measuring fitness level, performance optimization, mobility and fall detection. Knitting technology is used for production by using highly elastic nylon yarn. In order to evaluate comfort performance of the garment, yarn strength and elongation, air permeability, moisture management and FAST tests (Fabric Assurance Fabric Testing) were carried out, respectively. After testing of textile part of the chest band, IMU sensors were integrated onto the garment by means of conductive yarns. Electrical conductivity of the circuit was also assessed at the end. Results indicated that the weight and the thickness of the product are relatively high for sports uses and it has a negative impact on comfort properties. However, it is highly stretchable and moisture management properties are still in acceptable values. From the perspective of possible application areas, developed smart chest band in this research could be used in sports facilities as well as health care applications for elderly and disabled people.

  16. Compact design of a transmission electron microscope-scanning tunneling microscope holder with three-dimensional coarse motion

    International Nuclear Information System (INIS)

    Svensson, K.; Jompol, Y.; Olin, H.; Olsson, E.

    2003-01-01

    A scanning tunneling microscope (STM) with a compact, three-dimensional, inertial slider design is presented. Inertial sliding of the STM tip, in three dimensions, enables coarse motion and scanning using only one piezoelectric tube. Using the same electronics both for scanning and inertial sliding, step lengths of less than 5% of the piezo range were achieved. The compact design, less than 1 cm3 in volume, ensures a low mechanical noise level and enables us to fit the STM into the sample holder of a transmission electron microscope (TEM), while maintaining atomic scale resolution in both STM and TEM imaging

  17. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  18. Development of an S-band cavity Beam Position Monitor for ATF2

    Science.gov (United States)

    Heo, A.; Kim, E.-S.; Kim, H.; Son, D.; Honda, Y.; Tauchi, T.

    2013-04-01

    We have developed an S-band cavity Beam Position Monitor (BPM) in order to measure the position of an electron beam in the final focus area at ATF2, which is the test facility for the final focus design for the International Linear Collider (ILC). The lattice of the ILC Beam Delivery System (BDS) has been modified, requiring a larger physical aperture of 40 mm in the final focus area. The beam orbit measurement in this area is now covered with high resolution S-Band cavity BPMs. In this paper we summarize the design of the cavity BPM and the first experimental results. The calibration slopes were measured as 0.87 counts/μm in the x-coordinate direction and 1.16 counts/μm in the y-coordinate direction.

  19. Band Gap Modulated by Electronic Superlattice in Blue Phosphorene.

    Science.gov (United States)

    Zhuang, Jincheng; Liu, Chen; Gao, Qian; Liu, Yani; Feng, Haifeng; Xu, Xun; Wang, Jiaou; Zhao, Jijun; Dou, Shi Xue; Hu, Zhenpeng; Du, Yi

    2018-05-22

    Exploring stable two-dimensional materials with appropriate band gaps and high carrier mobility is highly desirable due to the potential applications in optoelectronic devices. Here, the electronic structures of phosphorene on a Au(111) substrate are investigated by scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. The substrate-induced phosphorene superstructure gives a superlattice potential, leading to a strong band folding effect of the sp band of Au(111) on the band structure. The band gap could be clearly identified in the ARPES results after examining the folded sp band. The value of the energy gap (∼1.1 eV) and the high charge carrier mobility comparable to that of black phosphorus, which is engineered by the tensile strain, are revealed by the combination of ARPES results and DFT calculations. Furthermore, the phosphorene layer on the Au(111) surface displays high surface inertness, leading to the absence of multilayer phosphorene. All these results suggest that the phosphorene on Au(111) could be a promising candidate, not only for fundamental research but also for nanoelectronic and optoelectronic applications.

  20. Electronic structure investigation of MoS2 and MoSe2 using angle-resolved photoemission spectroscopy and ab initio band structure studies.

    Science.gov (United States)

    Mahatha, S K; Patel, K D; Menon, Krishnakumar S R

    2012-11-28

    Angle-resolved photoemission spectroscopy (ARPES) and ab initio band structure calculations have been used to study the detailed valence band structure of molybdenite, MoS(2) and MoSe(2). The experimental band structure obtained from ARPES has been found to be in good agreement with the theoretical calculations performed using the linear augmented plane wave (LAPW) method. In going from MoS(2) to MoSe(2), the dispersion of the valence bands decreases along both k(parallel) and k(perpendicular), revealing the increased two-dimensional character which is attributed to the increasing interlayer distance or c/a ratio in these compounds. The width of the valence band and the band gap are also found to decrease, whereas the valence band maxima shift towards the higher binding energy from MoS(2) to MoSe(2).

  1. Multi-band tight-binding calculation of electronic transport in Fe/trans-polyacetylene/Fe tunnel junctions

    International Nuclear Information System (INIS)

    Abedi Ravan, B

    2012-01-01

    In this paper, the electronic transport characteristics of Fe/trans-polyacetylene/Fe magnetic tunnel junctions (MTJs) are investigated using multi-band tight-binding calculations within the framework of nonequilibrium Green function theory. A CH 2 radical is added to different positions on the polymer chain and its effects on the tunnelling magnetoresistance of the MTJ are studied. The ferromagnetic electrodes are assumed to be single-band and their tight-binding parameters are chosen in such a way as to simulate the ab initio density functional calculations of the band structure of bcc-Fe along its [001] crystallographic direction. In building the Hamiltonian of the trans-polyacetylene (t-PA) chain, we have assumed an s orbital on the H atoms and one s and three p(p x ,p y ,p z ) orbitals on the C atoms, and the dimerization effects are taken into account. It is found that moving the radical out of the centre of the polymer chain enhances the tunnelling magnetoresistance of the MTJ.

  2. Electron Microscopic Examination of Irradiated TRISO Coated Particles of Compact 6-3-2 of AGR-1 Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Van Rooyen, Isabella Johanna [Idaho National Lab. (INL), Idaho Falls, ID (United States); Demkowicz, Paul Andrew [Idaho National Lab. (INL), Idaho Falls, ID (United States); Riesterer, Jessica Lori [Idaho National Lab. (INL), Idaho Falls, ID (United States); Miller, Brandon Douglas [Idaho National Lab. (INL), Idaho Falls, ID (United States); Janney, Dawn Elizabeth [Idaho National Lab. (INL), Idaho Falls, ID (United States); Harp, Jason Michael [Idaho National Lab. (INL), Idaho Falls, ID (United States); Ploger, Scott Arden [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2012-12-01

    The electron microscopic examination of selected irradiated TRISO coated particles of the AGR-1 experiment of fuel compact 6-3-2 are presented in this report. Compact 6-3-2 refers to the compact in Capsule 6 at level 3 of Stack 2. The fuel used in capsule 6 compacts, are called the “baseline” fuel as it is fabricated with refined coating process conditions used to fabricate historic German fuel, because of its excellent irradiation performance with UO2 kernels. The AGR-1 fuel is however made of low-enriched uranium oxycarbide (UCO). Kernel diameters are approximately 350 µm with a U-235 enrichment of approximately 19.7%. Compact 6-3-2 has been irradiated to 11.3% FIMA compact average burn-up with a time average, volume average temperature of 1070.2°C and with a compact average fast fluence of 2.38E21 n/cm

  3. I. Final Report for DOE SBIR Phase I Project DE-SC0013795 Final Report for DOE SBIR Phase I Project DE-SC0013795 Microtron-based Compact, Portable Gamma-Ray Source

    Energy Technology Data Exchange (ETDEWEB)

    Abrams, Robert J. [Muons Inc., Batavia, IL (United States)

    2017-01-09

    Microtron-based Compact, Portable Gamma-Ray Source. The objective of Phase I of this project was to produce a conceptual design of a prototype compact microtron electron accelerator, which could be designed, built, and demonstrated in Phase II of the project. The conceptual design study included an analysis of the parameters of the microtron and its components, and the expected performance of the prototype microtron as a source of x-rays and/or RF neutrons in the MeV energy range. The major components of the microtron are the magnet, the accelerating system, the power system, the vacuum system, the control system, the beam extraction system and the targets to produce x-rays (and/or neutrons). Our objectives for the design of the prototype were for it to be compact, cost-effective, capable of producing high intensity x-ray (an/or neutron) fluxes. In addition, the prototype was to be easily assembled and disassembled so that components could be easily replaced. The main parameters for the prototype are the following: the range of electron kinetic energies, the output power, the RF frequency band (X-band, C-band, or S-Band), the type of injection (Type I or Type II), the magnet type, i.e. permanent magnet, electromagnet, or a hybrid combination of permanent and electromagnet. The results of the Phase I study and analysis for a prototype microtron are the following: The electron energy range can be varied from below 6 MeV to 9 MeV, the optimal frequency range is S-Band (2-4 GHz) RF frequency, Type II injection (described below), and the magnet type is the hybrid version. The prototype version will be capable of producing gamma ray doses of ~1800 R/min-m and neutron fluxes of up to ~6 x 1010 n/s with appropriate targets. The results of the Phase I study and analysis are provided below. The proposed Phase II plan was to demonstrate the prototype at low beam power. In the subsequent Phase III, high power tests would be performed, and the design of commercial

  4. Electronic structure of shandite Co3Sn2S2

    Science.gov (United States)

    Dedkov, Y. S.; Holder, M.; Molodtsov, S. L.; Rosner, H.

    2008-03-01

    The electronic structure of shandite Co3Sn2S2 was determined by photoelectron spectroscopy and compared with ab initio band structure calculations. Presented results give evidence that this compound has half-metallic ferromagnetic properties.

  5. Reconstruction of Band Structure Induced by Electronic Nematicity in an FeSe Superconductor

    Science.gov (United States)

    Nakayama, K.; Miyata, Y.; Phan, G. N.; Sato, T.; Tanabe, Y.; Urata, T.; Tanigaki, K.; Takahashi, T.

    2014-12-01

    We have performed high-resolution angle-resolved photoemission spectroscopy on an FeSe superconductor (Tc˜8 K ), which exhibits a tetragonal-to-orthorhombic structural transition at Ts˜90 K . At low temperature, we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T ˜110 K , slightly above Ts, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

  6. Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

    Science.gov (United States)

    Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

    2012-05-01

    The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

  7. A Very Compact AES-SPIHT Selective Encryption Computer Architecture Design with Improved S-Box

    Directory of Open Access Journals (Sweden)

    Jia Hao Kong

    2013-01-01

    Full Text Available The “S-box” algorithm is a key component in the Advanced Encryption Standard (AES due to its nonlinear property. Various implementation approaches have been researched and discussed meeting stringent application goals (such as low power, high throughput, low area, but the ultimate goal for many researchers is to find a compact and small hardware footprint for the S-box circuit. In this paper, we present our version of minimized S-box with two separate proposals and improvements in the overall gate count. The compact S-box is adopted with a compact and optimum processor architecture specifically tailored for the AES, namely, the compact instruction set architecture (CISA. To further justify and strengthen the purpose of the compact crypto-processor’s application, we have also presented a selective encryption architecture (SEA which incorporates the CISA as a part of the encryption core, accompanied by the set partitioning in hierarchical trees (SPIHT algorithm as a complete selective encryption system.

  8. An L-Band Polarized Electron PWT Photoinjector for the International Linear Collider (ILC)

    CERN Document Server

    Yu, David; Chen Ping; Lundquist, Martin; Luo, Yan; Smirnov, Alexei Yu

    2005-01-01

    A multi-cell, standing-wave, L-band, p-mode, plane-wave-transformer (PWT) photoinjector with an integrated photocathode in a novel linac structure is proposed by DULY Research Inc. as a polarized electron source. The PWT photoinjector is capable of operation in ultra high vacuum and moderate field gradient. Expected performance of an L-band polarized electron PWT injector operating under the parameters for the International Linear Collider is presented. The projected normalized transverse rms emittance is an order of magnitude lower than that produced with a polarized electron dc gun followed by subharmonic bunchers.

  9. High-resolution compact Johann crystal spectrometer with the Livermore electron beam ion trap

    International Nuclear Information System (INIS)

    Robbins, D.L.; Chen, H.; Beiersdorfer, P.; Faenov, A.Ya.; Pikuz, T.A.; May, M.J.; Dunn, J.; Smith, A.J.

    2004-01-01

    A compact high-resolution (λ/Δλ≅10 000) spherically bent crystal spectrometer in the Johann geometry was recently installed and tested on the Lawrence Livermore National Laboratory SuperEBIT electron beam ion trap. The curvature of the mica (002) crystal grating allows for higher collection efficiency compared to the flat and cylindrically bent crystal spectrometers commonly used on the Livermore electron beam ion traps. The spectrometer's Johann configuration enables orientation of its dispersion plane to be parallel to the electron beam propagation. Used in concert with a crystal spectrometer, whose dispersion plane is perpendicular to the electron beam propagation, the polarization of x-ray emission lines can be measured

  10. A Wideband and Compact Circularly-Polarized Rectenna for Low Power Application

    OpenAIRE

    Okba , Abderrahim; Takacs , Alexandru; Aubert , Hervé; Bellion , Anthony; Grenana , D

    2017-01-01

    International audience; This paper presents a wideband and compact circularly polarized rectenna composed by an Archimedean spiral antenna that covers the S and C frequency bands and a silicon Schottky diode. This rectenna (rectifier + antenna) is used for electromagnetic energy harvesting over a wide frequency band, in order to power autonomous wireless sensors used for satellite health monitoring. For low incident power densities (around 14 µW/cm²) the measured efficiency of at least 19% be...

  11. A 7MeV S-Band 2998MHz Variable Pulse Length Linear Accelerator System

    CERN Document Server

    Hernandez, Michael; Mishin, Andrey V; Saverskiy, Aleksandr J; Skowbo, Dave; Smith, Richard

    2005-01-01

    American Science and Engineering High Energy Systems Division (AS&E HESD) has designed and commissioned a variable pulse length 7 MeV electron accelerator system. The system is capable of delivering a 7 MeV electron beam with a pulse length of 10 nS FWHM and a peak current of 1 ampere. The system can also produce electron pulses with lengths of 20, 50, 100, 200, 400 nS and 3 uS FWHM with corresponding lower peak currents. The accelerator system consists of a gridded electron gun, focusing coil, an electrostatic deflector system, Helmholtz coils, a standing wave side coupled S-band linac, a 2.6 MW peak power magnetron, an RF circulator, a fast toroid, vacuum system and a PLC/PC control system. The system has been operated at repetition rates up to 250pps. The design, simulations and experimental results from the accelerator system are presented in this paper.

  12. Observation of total electron content and irregularities in electron density using GHz band radiowaves emitted from satellite

    International Nuclear Information System (INIS)

    Ogawa, Tadahiko; Fujita, Masaharu; Awaka, Jun.

    1978-01-01

    The experiments to investigate the influence of troposphere on millimeter and sub-millimeter wave propagation were carried out, using the engineering test satellite -- 2 (ETS-2) which became the Japanese first stationary satellite and carries the transmitter emitting beacon waves of 1.7, 11.5 and 34.5 GHz coherent each other. By these experiments, it was found that the waves of 1.7 and 11.5 GHz were affected by the ionosphere. The measurement of total electron content using GHz band waves was the first trial in the world, and is capable of grasping its change with higher accuracy than conventional methods. Scintillation of 1.7 GHz is mainly the phenomenon during night, and it was revealed that it has a peak at 22.30 local time and occurred through the radiowave scattering owing to the irregularities of the ionosphere. It is also suggested that some plasma instability is generated in the place where electron density gradient in the ionosphere is large, and the irregularities of fine scale are produced, assuming from GHz band scintillations at the time of magnetic storm. The relations among wave number spectrum, scintillation frequency spectrum and S4 index (statistical quantity to give estimate for scintillation amplitude) can be derived by the weak scattering theory (Simple scattering theory). As seen above, the diagnosis of plasma disturbances in the ionosphere is feasible by the simultaneous observations of total electron content and scintillation. (Wakatsuki, Y.)

  13. Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

    Energy Technology Data Exchange (ETDEWEB)

    Matetskiy, A.V., E-mail: mateckij@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Bondarenko, L.V.; Tupchaya, A.Y.; Gruznev, D.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Eremeev, S.V. [Institute of Strength Physics and Materials Science, 634021 Tomsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

    2017-06-01

    Highlights: • Modification of electronic properties of ultrathin Bi films by adsorbates is demonstrated. • Due to electron doping from Cs adatoms, surface-state bands shift to higher binding energies. • As a result, only electron pockets are left in the Fermi map. • Tin acts as an acceptor dopant for Bi, shifting Fermi level upward. • As a result, only hole pockets are left in the Fermi map. - Abstract: Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

  14. Electron Microscopic Examination of Irradiated TRISO Coated Particles of Compact 6-3-2 of AGR-1 Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Van Rooyen, Isabella Johanna [Idaho National Lab. (INL), Idaho Falls, ID (United States); Demkowicz, Paul Andrew [Idaho National Lab. (INL), Idaho Falls, ID (United States); Riesterer, Jessica Lori [Idaho National Lab. (INL), Idaho Falls, ID (United States); Miller, Brandon Douglas [Idaho National Lab. (INL), Idaho Falls, ID (United States); Janney, Dawn Elizabeth [Idaho National Lab. (INL), Idaho Falls, ID (United States); Harp, Jason Michael [Idaho National Lab. (INL), Idaho Falls, ID (United States); Ploger, Scott Arden [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2012-12-01

    The electron microscopic examination of selected irradiated TRISO coated particles of the AGR-1 experiment of fuel compact 6-3-2 are presented in this report. Compact 6-3-2 refers to the compact in Capsule 6 at level 3 of Stack 2. The fuel used in capsule 6 compacts, are called the “baseline” fuel as it is fabricated with refined coating process conditions used to fabricate historic German fuel, because of its excellent irradiation performance with UO2 kernels. The AGR-1 fuel is however made of low-enriched uranium oxycarbide (UCO). Kernel diameters are approximately 350 µm with a U-235 enrichment of approximately 19.7%. Compact 6-3-2 has been irradiated to 11.3% FIMA compact average burn-up with a time average, volume average temperature of 1070.2°C and with a compact average fast fluence of 2.38E21 n/cm

  15. Formation of positive radial electric field by electron cyclotron heating in compact helical system

    International Nuclear Information System (INIS)

    Idei, H.; Ida, K.; Sanuki, H.

    1994-07-01

    The radial electric field is driven to positive value by off-axis second harmonic electron cyclotron heating (ECH) in the Compact Helical System. The observed positive electric field is associated with the outward particle flux enhanced with ECH. The enhanced particle flux triggered by the production of the electrons accelerated perpendicularly to the magnetic field with ECH results in the change of the electric field. (author)

  16. Adaptive Optics System with Deformable Composite Mirror and High Speed, Ultra-Compact Electronics

    Science.gov (United States)

    Chen, Peter C.; Knowles, G. J.; Shea, B. G.

    2006-06-01

    We report development of a novel adaptive optics system for optical astronomy. Key components are very thin Deformable Mirrors (DM) made of fiber reinforced polymer resins, subminiature PMN-PT actuators, and low power, high bandwidth electronics drive system with compact packaging and minimal wiring. By using specific formulations of fibers, resins, and laminate construction, we are able to fabricate mirror face sheets that are thin (2 KHz. By utilizing QorTek’s proprietary synthetic impendence power supply technology, all the power, control, and signal extraction for many hundreds to 1000s of actuators and sensors can be implemented on a single matrix controller printed circuit board co-mounted with the DM. The matrix controller, in turn requires only a single serial bus interface, thereby obviating the need for massive wiring harnesses. The technology can be scaled up to multi-meter aperture DMs with >100K actuators.

  17. Compaction of Ti–6Al–4V powder using high velocity compaction technique

    International Nuclear Information System (INIS)

    Khan, Dil Faraz; Yin, Haiqing; Li, He; Qu, Xuanhui; Khan, Matiullah; Ali, Shujaat; Iqbal, M. Zubair

    2013-01-01

    Highlights: • We compacted Ti–6Al–4V powder by HVC technique. • As impact force rises up, the green density of the compacts increases gradually. • At impact force 1.857 kN relative sintered density of the compacts reaches 99.88%. • Spring back of the green compact’s decreases gradually with increasing impact force. • Mechanical properties of the samples increases with increasing impact force. - Abstract: High velocity compaction technique was applied to the compaction of pre-alloyed, hydride–dehydride Ti–6Al–4V powder. The powder was pressed in single stroke with a compaction speed of 7.10–8.70 ms −1 . When the speed was 8.70 ms −1 , the relative density of the compacts reaches up to 85.89% with a green density of 3.831 g cm −3 . The green samples were sintered at 1300 °C in Ar-gas atmosphere. Scanning electron microscope (SEM) was used to examine the surface of the sintered samples. Density and mechanical properties such as Vickers micro hardness and bending strength of the powder samples were investigated. Experimental results indicated that with the increase in impact force, the density and mechanical properties of the compacts increased. The sintered compacts exhibited a maximum relative density of 99.88% with a sintered density of 4.415 g cm −3 , hardness of 364–483 HV and the bending strength in the range of 103–126.78 MPa. The springback of the compacts decreased with increasing impact force

  18. Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.

    Science.gov (United States)

    Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A

    2016-01-29

    We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

  19. Challenges in designing a very compact 130 MeV Moeller polarimeter for the S-DALINAC

    Energy Technology Data Exchange (ETDEWEB)

    Bahlo, Thore; Enders, Joachim; Kuerzeder, Thorsten; Pietralla, Norbert; Wissmann, Jan [Institut fuer Kernphysik, TU Darmstadt, Darmstadt (Germany)

    2016-07-01

    The Superconducting Darmstadt Linear Accelerator is capable of accelerating polarized electron beams produced by the S-DALINAC Polarized Injector (SPIN). For electron energies of up to 14 MeV it is possible to measure the absolute polarization of the electrons with two Mott polarimeters that are already mounted in the injector beamline. Until now it is not possible to measure the absolute electron beam polarization after the passage of the main accelerator. Therefore a Moeller polarimeter for energies between 50 MeV and 130 MeV is currently being developed. The rather low incident beam energy, the variability of the incident beam energy, and spatial restrictions necessitate a compact set-up with large acceptance. The very restrictive boundary conditions introduce technical and geometrical challenges. We will present the design of the target chamber, of the separation dipole magnet as well as the beam dump.

  20. Band alignment of ZnO/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xinke, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn; He, Jiazhu; Chen, Le; Li, Kuilong; Jia, Fang; Zeng, Yuxiang; Lu, Youming; Zhu, Deliang; Liu, Wenjun, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn [College of Materials Science and Engineering, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Zhang, Yuan [School of Physics and Electronic Information, Hua Bei Normal University, 100 Dongshan Road, Huai Bei 235000 (China); Liu, Qiang; Yu, Wenjie [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050 (China); Wu, Jing [Institute of Materials research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore (Singapore)

    2016-08-15

    The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface has been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.

  1. A Wide-Band High-Gain Compact SIS Receiver Utilizing a 300-μW SiGe IF LNA

    Science.gov (United States)

    Montazeri, Shirin; Grimes, Paul K.; Tong, Cheuk-Yu Edward; Bardin, Joseph C.

    2017-06-01

    Low-power low-noise amplifiers integrated with superconductor-insulator-superconductor (SIS) mixers are required to enable implementation of large-scale focal plane arrays. In this work, a 220-GHz SIS mixer has been integrated with a high-gain broad-band low-power IF amplifier into a compact receiver module. The low noise amplifier (LNA) was specifically designed to match to the SIS output impedance and contributes less than 7 K to the system noise temperature over the 4-8 GHz IF frequency range. A receiver noise temperature of 30-45 K was measured for a local oscillator frequency of 220 GHz over an IF spanning 4-8 GHz. The LNA power dissipation was only 300-μW. To the best of the authors' knowledge, this is the lowest power consumption reported for a high-gain wide-band LNA directly integrated with an SIS mixer.

  2. Electronic and optical properties of 2D graphene-like ZnS: DFT calculations

    International Nuclear Information System (INIS)

    Lashgari, Hamed; Boochani, Arash; Shekaari, Ashkan; Solaymani, Shahram; Sartipi, Elmira; Mendi, Rohollah Taghavi

    2016-01-01

    Graphical abstract: - Highlights: • DFT has been applied to investigate the optical properties of 2D-ZnS and 3D-ZnS. • The electronic and the optical properties of 3D-ZnS and 2D-ZnS are compared. • At visible range of energies the transparency of 2D-ZnS is more than the 3D. - Abstract: Density-functional theory has been applied to investigate the electronic and optical properties of graphene-like two-dimensional ZnS in the (0001) direction of its Wurtzite phase. A comparison with 3D-ZnS has been carried out within the PBE- and EV-GGA. The electronic properties of 2D- and 3D-ZnS have been derived by the examination of the electronic band structures and density of states. The optical properties have been determined through the study of the dielectric function, reflectivity, electron loss function, refractive and extinction indices, the absorption index and optical conductivity. It is found that the transparency of 2D-ZnS is greater than the 3D over the visible range. A thorough study of the dielectric function has been performed so that the peaks and the transition bands have been specified. The electron loss function demonstrates that the plasmonic frequency for 2D- and 3D-ZnS is accrued at 11.22 and 19.93 eV within the PBE-GGA, respectively.

  3. Multi-Band Multi-Tone Tunable Millimeter-Wave Frequency Synthesizer For Satellite Beacon Transmitter

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.

    2016-01-01

    This paper presents the design and test results of a multi-band multi-tone tunable millimeter-wave frequency synthesizer, based on a solid-state frequency comb generator. The intended application of the synthesizer is in a satellite beacon transmitter for radio wave propagation studies at K-band (18 to 26.5 GHz), Q-band (37 to 42 GHz), and E-band (71 to 76 GHz). In addition, the architecture for a compact beacon transmitter, which includes the multi-tone synthesizer, polarizer, horn antenna, and power/control electronics, has been investigated for a notional space-to-ground radio wave propagation experiment payload on a small satellite. The above studies would enable the design of robust high throughput multi-Gbps data rate future space-to-ground satellite communication links.

  4. Development of a compact x-ray source via laser compton scattering at KEK-LUCX

    International Nuclear Information System (INIS)

    Sakaue, Kazuyuki; Washio, Masakazu; Aryshev, Alexander; Araki, Sakae; Urakawa, Junji; Terunuma, Nobuhiro; Fukuda, Masafumi; Miyoshi, Toshinobu; Takeda, Ayaki

    2013-01-01

    The compact X-ray source based on Laser-Compton scattering (LCS) has been developed at LUCX (Laser Undulator Compact X-ray source) facility in KEK. The multi-bunch high quality electron beam produced by a standing wave 3.6 cell RF Gun and accelerated by the followed S-band normal conducting 12 cells standing wave 'Booster' linear accelerator is scattered off the laser beam stored in the optical cavity. The 4-mirror planar optical cavity with finesse 335 is used. The MCP (Micro-Channer Plate) detector as well as SOI (Silicon-On-Insulator) pixel sensor was used for scattered X-ray detection. The SOI pixel sensor has been used for LCS X-ray detection for the first time and has demonstrated high spatial resolution and high SN ratio X-ray detection that in turn lead to clearest X-ray images achieved by LCS X-ray. We have also achieved generation of 6.38x10 6 ph./sec., which is more than 30 times larger LCS X-ray flux in comparison with our previous results. The complete details of LUCX LCS X-ray source, specifications of both electron and laser beams, and the results of LCS X-ray generation experiments are reported in this paper. (author)

  5. Effect of hydrostatic pressure on the structural and electronic properties of Cd{sub 0.75}Cr{sub 0.25}S

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Anita [Guru Nanak College for Girls, Sri Muktsar Sahib Punjab-152026 (India); Kaur, Kulwinder; Kumar, Ranjan [Department of Physics, Panjab University Chandigarh-160014 (India); Dhiman, Shobna [Department of Applied Science, PEC, University of Technology, Chandigarh-160011 (India)

    2016-05-23

    In this paper we present the results obtained from first principle calculations of the effect of hydrostatic pressure on the structural and electronic properties of Cd{sub 1-x}Cr{sub x}S diluted magnetic semiconductor in Zinc Blende (B3) phase at x=0.25. High pressure behavior of Cd{sub 1-x}Cr{sub x}S has been investigated between 0 GPa to 100 GPa The calculations have been performed using Density functional theory as implemented in the Spanish Initiative for Electronic Simulations with Thousands of Atoms code using local density approximation as exchange-correlation (XC) potential. Calculated electronic band structures of Cd{sub 1-x}Cr{sub x}S are discussed in terms of contribution of Cr 3d{sup 5} 4s{sup 1}, Cd 4d{sup 10} 5s{sup 2}, S 3s{sup 2} 3p{sup 4} orbital’s. Study of band structures shows half-metallic ferromagnetic nature of Cd{sub 0.75}Cr{sub 0.25}S with 100% spin polarization. Under application of external pressure, the valence band and conduction band are shifted upward which leads to modification of electronic structure.

  6. Compact Planar Ultrawideband Antennas with 3.5/5.2/5.8 GHz Triple Band-Notched Characteristics for Internet of Things Applications

    Directory of Open Access Journals (Sweden)

    Jian Dong

    2017-02-01

    Full Text Available Ultrawideband (UWB antennas, as core devices in high-speed wireless communication, are widely applied to mobile handsets, wireless sensor networks, and Internet of Things (IoT. A compact printed monopole antenna for UWB applications with triple band-notched characteristics is proposed in this paper. The antenna has a very compact size of 10 x 16 mm2 and is composed of a square slotted radiation patch and a narrow rectangular ground plane on the back of the substrate. First, by etching a pair of inverted T-shaped slots at the bottom of the radiation patch, one notched band at 5-6 GHz for rejecting the Wireless Local Area Network (WLAN is generated. Then, by cutting a comb-shaped slot on the top of the radiation patch, a second notched band for rejecting 3.5 GHz Worldwide Interoperability for Microwave Access (WiMAX is obtained. Further, by cutting a pair of rectangular slots and a C-shaped slot as well as adding a pair of small square parasitic patches at the center of the radiating patch, two separate notched bands for rejecting 5.2 GHz lower WLAN and 5.8 GHz upper WLAN are realized, respectively. Additionally, by integrating the slotted radiation patch with the narrow rectangular ground plane, an enhanced impedance bandwidth can be achieved, especially at the higher band. The antenna consists of linear symmetrical sections only and is easy for fabrication and fine-tuning. The measured results show that the designed antenna provides a wide impedance bandwidth of 150% from 2.12 to 14.80 GHz for VSWR < 2, except for three notched bands of 3.36–4.16, 4.92–5.36, and 5.68–6.0 GHz. Additionally, the antenna exhibits nearly omnidirectional radiation characteristics, low gain at the stopbands, and flat group delay over the whole UWB except at the stopbands. Simulated and experimental results show that the proposed antenna can provide good frequency-domain and time-domain performances at desired UWB frequencies and be an attractive candidate for

  7. Design of an X-band accelerating structure using a newly developed structural optimization procedure

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Xiaoxia [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Fang, Wencheng; Gu, Qiang [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Zhao, Zhentang, E-mail: zhaozhentang@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China)

    2017-05-11

    An X-band high gradient accelerating structure is a challenging technology for implementation in advanced electron linear accelerator facilities. The present work discusses the design of an X-band accelerating structure for dedicated application to a compact hard X-ray free electron laser facility at the Shanghai Institute of Applied Physics, and numerous design optimizations are conducted with consideration for radio frequency (RF) breakdown, RF efficiency, short-range wakefields, and dipole/quadrupole field modes, to ensure good beam quality and a high accelerating gradient. The designed X-band accelerating structure is a constant gradient structure with a 4π/5 operating mode and input and output dual-feed couplers in a racetrack shape. The design process employs a newly developed effective optimization procedure for optimization of the X-band accelerating structure. In addition, the specific design of couplers providing high beam quality by eliminating dipole field components and reducing quadrupole field components is discussed in detail.

  8. Trends on band alignments: Validity of Anderson's rule in SnS2- and SnSe2-based van der Waals heterostructures

    Science.gov (United States)

    Koda, Daniel S.; Bechstedt, Friedhelm; Marques, Marcelo; Teles, Lara K.

    2018-04-01

    Van der Waals (vdW) heterostructures are promising candidates for building blocks in novel electronic and optoelectronic devices with tailored properties, since their electronic action is dominated by the band alignments upon their contact. In this work, we analyze 10 vdW heterobilayers based on tin dichalcogenides by first-principles calculations. Structural studies show that all systems are stable, and that commensurability leads to smaller interlayer distances. Using hybrid functional calculations, we derive electronic properties and band alignments for all the heterosystems and isolated two-dimensional (2D) crystals. Natural band offsets are derived from calculated electron affinities and ionization energies of 11 freestanding 2D crystals. They are compared with band alignments in true heterojunctions, using a quantum mechanical criterion, and available experimental data. For the hBN/SnSe 2 system, we show that hBN suffers an increase in band gap, while leaving almost unchanged the electronic properties of SnSe2. Similarly, MX2 (M = Mo, W; X = S, Se) over SnX2 preserve the natural discontinuities from each side of the heterobilayer. Significant charge transfer occurs in junctions with graphene, which becomes p-doped and forms an Ohmic contact with SnX2. Zirconium and hafnium dichalcogenides display stronger interlayer interactions, leading to larger shifts in band alignments with tin dichalcogenides. Significant orbital overlap is found, which creates zero conduction band offset systems. The validity of the Anderson electron affinity rule is discussed. Failures of this model are traced back to interlayer interaction, band hybridization, and quantum dipoles. The systematic work sheds light on interfacial engineering for future vdW electronic and optoelectronic devices.

  9. Pulse modulator for X-band klystron at GLCTA

    International Nuclear Information System (INIS)

    Akemoto, M.; Honma, H.; Nakajima, H.; Shidara, T.; Fukuda, S.

    2004-01-01

    This paper presents an X-band klystron modulator recently constructed for the Global Linear Collider Test Accelerator (GLCTA) at KEK. The modulator is a thyratron-switched line-type design, and operates two klystrons up to 75 MW peak power, 1.6 μs rf pulse width and up to 150 Hz repetition rate. The major goals of the modulator are reasonably compact size and high reliability. One notable feature is the use of eight 30kJ/s switching power supplies in parallel to charge the pulse forming network. These supplies are a major contributor to compact size of the modulator. The design, specifications and results of performance tests of the modulator are described. (author)

  10. Stability and electronic properties of SiC nanowire adsorbed on MoS{sub 2} monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Munish, E-mail: munishsharmahpu@live.com; Pooja,; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla, H. P., 171005 (India); Kumar, Ashok [Department of Physics, Panjab University, Chandigarh, 160014 (India)

    2015-06-24

    Structural stability and electronic properties of silicon carbide (SiC) nano-wire on MoS{sub 2} monolayer are investigated within the framework of density functional theory (DFT). The preferred binding site for the SiC nano-wire is predicted to be hollow site of monolayer. In the electronic band structure the states in valence band near Fermi level are mainly due to nano-wire leading to reduction of band gap relative to monolayer. These results provide a platform for their applications in optoelectronic devices.

  11. Electronic band structure of TiFese2 in ferromagnetic phase

    International Nuclear Information System (INIS)

    Jahangirli, Z.A.; Mimura, K.; Shim, Y.; Mamedov, N.T.; Wakita, K.; Orudzhev, G.S.; Jahangirli, Z.A.

    2011-01-01

    Electronic band structure of crystalline TiFeSe 2 has been calculated using full-potential method of Linear Augmented Plane Wave (LAPW) in density-functional approach with exchange-correlation potential taken in Generalized Gradient Approximation (GGA). The chemical bond in TiFeSe 2 is shown to be metallic because energies of 3d-electrons localized at iron atoms are close to Fermi energy level

  12. Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

    International Nuclear Information System (INIS)

    Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V.; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei

    2014-01-01

    We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al 2 O 3 /InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al 2 O 3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al 2 O 3 valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance

  13. Design of a compact synchrotron light source for medical applications at NIRS

    International Nuclear Information System (INIS)

    Torikoshi, M.; Endo, M.; Kumada, M.; Noda, K.; Yamada, S.; Kawachi, K.

    1998-01-01

    A synchrotron light source dedicated to medical applications is required to be compact for installation in limited spaces at hospitals. The NIRS storage ring, with a circumference of 44.8 m, is designed to accelerate electrons up to 1.8 GeV and to store a beam of 400 mA. The ring is composed of superconducting bending magnets for downsizing. A beam of 300 MeV is injected into the ring from a microtron operated at an L-band RF frequency. There are two superconducting multipole wigglers with nine poles and a maximum field of 8 T, which can produce a photon flux of about 1.4 x 10 13 photons s -1 mrad -1 (0.1% bandwidth) -1 at 33 keV used for coronary angiography

  14. Band-gap creation by icosahedral symmetry in nearly-free-electron materials

    International Nuclear Information System (INIS)

    Carlsson, A.E.

    1993-01-01

    A series of numerical electronic density-of-states calculations is performed for rational approximants to a model one-electron potential based on icosahedrally arranged plane-wave components. It is found that high-order approximants can have band gaps even if the low-order approximants do not; furthermore, the magnitude of the gap increases with the order of the approximant. The results are interpreted via a two- and three-wave analysis of the energy eigenvalues at the pseudo-Jones-zone faces and edges. It is also found that the mechanism of band-gap reduction in the rational approximants is the presence of a small density of gap states. An analytic calculation shows that these gap states result from a splitting of threefold and pseudothreefold states at the valence-band edge when the icosahedral symmetry is broken. The splitting is proportional to the error with which the ratio between the approximant indices approximates τ, the golden mean. Finally, an application to the AlCuLi system is presented

  15. Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

    KAUST Repository

    Zhang, Chendong

    2018-01-12

    Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

  16. Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

    KAUST Repository

    Zhang, Chendong; Li, Ming-yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong; Muller, David A.; Shih, Chih-Kang

    2018-01-01

    Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

  17. Theoretical analysis and simulation of the influence of self-bunching effects and longitudinal space charge effects on the propagation of keV electron bunch produced by a novel S-band Micro-Pulse electron Gun

    Science.gov (United States)

    Zhao, Jifei; Lu, Xiangyang; Zhou, Kui; Yang, Ziqin; Yang, Deyu; Luo, Xing; Tan, Weiwei; Yang, Yujia

    2016-06-01

    As an important electron source, Micro-Pulse electron Gun (MPG) which is qualified for producing high average current, short pulse, low emittance electron bunches steadily holds promise to use as an electron source of Coherent Smith-Purcell Radiation (CSPR), Free Electron Laser (FEL). The stable output of S-band MPG has been achieved in many labs. To establish reliable foundation for the future application of it, the propagation of picosecond electron bunch produced by MPG should be studied in detail. In this article, the MPG which was working on the rising stage of total effective Secondary Electron Yield (SEY) curve was introduced. The self-bunching mechanism was discussed in depth both in the multipacting amplifying state and the steady working state. The bunch length broadening induced by the longitudinal space-charge (SC) effects was investigated by different theoretical models in different regions. The 2D PIC codes MAGIC and beam dynamic codes TraceWin simulations were also performed in the propagation. The result shows an excellent agreement between the simulation and the theoretical analysis for bunch length evolution.

  18. Theoretical analysis and simulation of the influence of self-bunching effects and longitudinal space charge effects on the propagation of keV electron bunch produced by a novel S-band Micro-Pulse electron Gun

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jifei; Lu, Xiangyang, E-mail: xylu@pku.edu.cn; Yang, Ziqin; Yang, Deyu; Tan, Weiwei; Yang, Yujia [Institute of Heavy Ion Physics, School of Physics, Peking University, Beijing, 100871 (China); Zhou, Kui; Luo, Xing [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

    2016-06-15

    As an important electron source, Micro-Pulse electron Gun (MPG) which is qualified for producing high average current, short pulse, low emittance electron bunches steadily holds promise to use as an electron source of Coherent Smith-Purcell Radiation (CSPR), Free Electron Laser (FEL). The stable output of S-band MPG has been achieved in many labs. To establish reliable foundation for the future application of it, the propagation of picosecond electron bunch produced by MPG should be studied in detail. In this article, the MPG which was working on the rising stage of total effective Secondary Electron Yield (SEY) curve was introduced. The self-bunching mechanism was discussed in depth both in the multipacting amplifying state and the steady working state. The bunch length broadening induced by the longitudinal space-charge (SC) effects was investigated by different theoretical models in different regions. The 2D PIC codes MAGIC and beam dynamic codes TraceWin simulations were also performed in the propagation. The result shows an excellent agreement between the simulation and the theoretical analysis for bunch length evolution.

  19. Theoretical analysis and simulation of the influence of self-bunching effects and longitudinal space charge effects on the propagation of keV electron bunch produced by a novel S-band Micro-Pulse electron Gun

    Directory of Open Access Journals (Sweden)

    Jifei Zhao

    2016-06-01

    Full Text Available As an important electron source, Micro-Pulse electron Gun (MPG which is qualified for producing high average current, short pulse, low emittance electron bunches steadily holds promise to use as an electron source of Coherent Smith-Purcell Radiation (CSPR, Free Electron Laser (FEL. The stable output of S-band MPG has been achieved in many labs. To establish reliable foundation for the future application of it, the propagation of picosecond electron bunch produced by MPG should be studied in detail. In this article, the MPG which was working on the rising stage of total effective Secondary Electron Yield (SEY curve was introduced. The self-bunching mechanism was discussed in depth both in the multipacting amplifying state and the steady working state. The bunch length broadening induced by the longitudinal space-charge (SC effects was investigated by different theoretical models in different regions. The 2D PIC codes MAGIC and beam dynamic codes TraceWin simulations were also performed in the propagation. The result shows an excellent agreement between the simulation and the theoretical analysis for bunch length evolution.

  20. New generation of compact electron accelerators for radiation technologies

    International Nuclear Information System (INIS)

    Auslender, V.L.; Balakin, V.E.; Kraynov, G.S.

    1995-01-01

    Compact electron accelerators with energy range 0.25-1.0 MeV and beam power up to 32 kw are described. The feeding high voltage is formed by converter (working frequency 20 khz), coreless step-up transformer and a set of rectifying sections. The rectifying multiplier circuit used in rectifying sections permits to reach voltage gradient along accelerator's axis up to 14 kV/cm. The accelerators with vertical and horizontal position are described. The accelerators can be produced together with local radiation shielding and various underbeam transportation systems for irradiation of different products. Such version can be installed in any room facing general requirements for electric equipment

  1. IHEP S-band 45 MW pulse power klystron development

    International Nuclear Information System (INIS)

    Dong Dong; Zhou Zusheng; Zhang Liang; Li Gangying; Tian Shuangmin

    2006-01-01

    S-band 45 MW pulse power klystron has been developed in the Institute of High Energy Physics (IHEP) for the Beijing Electron Positron Collider (BEPC) upgrade projects (BEPC-II). This new klystron has 5 cavities in its RF-beam interaction and single RF output window, and the RF output power is 45 MW at 310 kV, the gain is 50 dB, the efficiency 40%. The manufacturing, training and testing of a prototype klystron has been finished in IHEP and RF power 45 MW at 300 kV has been reached. The testing results show that all the parameters of the 45 MW klystron reach the design goal. (authors)

  2. The Keenan and Wing bands in S stars

    International Nuclear Information System (INIS)

    Lambert, D.L.; Clegg, R.E.S.

    1980-01-01

    New observations of the near infrared spectra of S stars are presented as part of a survey of the unidentified Keenan and Wing bands. Bandhead wavelengths accurate to 0.5 A are presented. A new band is found at 9014 A. The bands are not present in normal M giants and dwarfs. Laboratory spectroscopy of heavy element oxides is reported. Several new identifications are proposed. The 10 300 A Wing band is identified with the Δv = - 1 sequence of the ZrO 9300 A Δv = 0 bands. The ZrO B 1 PI-A 1 Δ (Δv = 0) system may be responsible for either the 9736 A or the 10 515 A Wing bands. Two new bands in the near infrared at 8219 and 8235 A are provided by CeO. A new band with heads at 7503 and 7509 A in a spectrum of R And is tentatively attributed to YS. A band at 8268 A in M stars is the TiO delta(2-1) head. The 8610 A Keenan band is not due to CrH. Potential carriers of the Keenan and Wing bands are reviewed. It is suggested that the heavy element sulphides and, perhaps, chlorides are leading candidates. Identification of YS in R And may provide the first evidence for these sulphides. ZrS is a leading candidate for which laboratory spectroscopy is needed. (author)

  3. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    International Nuclear Information System (INIS)

    Saleh, Navid B.; Milliron, Delia J.; Aich, Nirupam; Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo

    2016-01-01

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  4. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    Energy Technology Data Exchange (ETDEWEB)

    Saleh, Navid B., E-mail: navid.saleh@utexas.edu [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States); Milliron, Delia J. [McKetta Department of Chemical Engineering, University of Texas, Austin, TX 78712 (United States); Aich, Nirupam [Department of Civil, Structural and Environmental Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260 (United States); Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States)

    2016-10-15

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  5. Observation of dark-current signals from the S-band structures of the SLAC linac

    International Nuclear Information System (INIS)

    Assmann, R.; Decker, F.J.; Seidel, M.; Siemann, R.H.; Whittum, D.

    1997-07-01

    It is well known that the electro-magnetic fields in high-gradient RF structures can cause electron emission from the metallic structure walls. If the emitted electrons are captured and accelerated by the accelerating fields so-called dark-current is induced. Dark-currents have been measured and studied for various RF-structures. In this paper the authors present measurements of RF induced signals for the SLC S-band structures. For nominal gradients of 17 MV/m it is shown that the dark-current can be strong enough to significantly reduce the signal-to-noise ratio of the SLC beam wire scanners. They also show results from RF measurements in the dipole band. The measurements are compared to more direct observations of dark-current and it is tried to connect the results to possible effects on the accelerated particle beam

  6. Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling

    DEFF Research Database (Denmark)

    Mazzola, Federico; Wells, Justin; Yakimova, Rosita

    2013-01-01

    Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the band...... of graphene that has a binding energy of more than 3:5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of states. The existence of the effect suggests a very weak coupling...

  7. A Printed Monopole Antenna for Triple-Band WLAN/WiMAX Applications

    Directory of Open Access Journals (Sweden)

    Huiqing Zhai

    2015-01-01

    Full Text Available A new compact design of monopole antenna for triple-band WLAN/WiMAX applications with two band-notches based on broadband antenna is presented. By introducing a stub loaded ground and two new paper clip structures etched on radiation patch, a compact overall dimension 31 mm × 33 mm × 1 mm and three separated operating bands effectively covering 2.4/5.2/5.8 GHz WLAN bands and 2.5/3.5/5.5 GHz WiMAX bands can be achieved. Compared with familiar U type slot, the introduced compact paper clip structure can save about 37% of dimension regions, which could effectively improve efficiency of band-notch formation. Simulated and measured results demonstrate that the proposed antenna has good dipole-like radiation characteristics with appreciable gain across the operating bands. Besides, main parameters of the two etched paper clip structures are investigated to control the positions and bandwidths of the two stop-bands, respectively, on basis of which the three working bands can be adjusted independently.

  8. Strain localization band width evolution by electronic speckle pattern interferometry strain rate measurement

    Energy Technology Data Exchange (ETDEWEB)

    Guelorget, Bruno [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)], E-mail: bruno.guelorget@utt.fr; Francois, Manuel; Montay, Guillaume [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)

    2009-04-15

    In this paper, electronic speckle pattern interferometry strain rate measurements are used to quantify the width of the strain localization band, which occurs when a sheet specimen is submitted to tension. It is shown that the width of this band decreases with increasing strain. Just before fracture, this measured width is about five times wider than the shear band and the initial sheet thickness.

  9. A first principle Comparative study of electronic and optical properties of 1H –MoS2 and 2H –MoS2

    International Nuclear Information System (INIS)

    Kumar, Ashok; Ahluwalia, P.K.

    2012-01-01

    First principle calculations of electronic and optical properties of monolayer MoS 2 , so called 1H –MoS 2 , is performed which has emerged as a new direct band gap semiconductor. Before calculations of the properties of 1H –MoS 2 , we have calculated structural parameters, electronic properties (electronic band structure and electronic density of states) and frequency dependent optical response (real and imaginary part of dielectric function, energy loss function, absorption and reflectance spectra) of 2H –MoS 2 and compared with existing experimental results and found that our calculated results are in very good agreements with experimental results. To compare the dielectric functions of bulk (2H –MoS 2 ) and monolayer (1H –MoS 2 ) phases we have further extended these calculations to the single layer MoS 2 (1H –MoS 2 ) which is analogous to graphene. Structural parameters of 1H –MoS 2 are found very close to its bulk 2H –MoS 2 . We find direct electronic band gap at ‘K’ high symmetry point as compared to indirect band gap in its bulk 2H – MoS2. Our calculated dielectric function for 1H – MoS2 shows structure at nearly same energy positions as compared to 2H – MoS2 with additional structure at 3.8 eV. Also additional well defined energy loss peaks revealing the plasmonic resonances at 15.7 eV and 16.0 eV for E vector perpendicular and parallel to c axis respectively for 1H – MoS2 have been found, which are the signatures of surface plasmons at these energies. -- Highlights: ► Structural parameters of 2H-MoS2 and 1H-MoS2 are nearly identical. ► States around the Fermi energy are mainly due to the metal d states. ► Strong hybridization between Mo-d and S-p states below the Fermi energy has been found. ► Optical spectra of 2H-MoS2 finds very good agreements with experimental optical spectra. ► The band gap is found to be direct for 1H-MoS2 as compared to indirect for 2H-MoS2.

  10. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    International Nuclear Information System (INIS)

    Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

    2011-01-01

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  11. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    Energy Technology Data Exchange (ETDEWEB)

    Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  12. A Compact Multiple Notched Ultra-Wide Band Antenna with an Analysis of the CSRR-TO-CSRR Coupling for Portable UWB Applications.

    Science.gov (United States)

    Rahman, MuhibUr; Ko, Dong-Sik; Park, Jung-Dong

    2017-09-25

    We present a compact ultra-wideband (UWB) antenna integrated with sharp notches with a detailed analysis of the mutual coupling of the multiple notch resonators. By utilizing complementary split ring resonators (CSRR) on the radiating semi-circular patch, we achieve the sharp notch-filtering of various bands within the UWB band without increasing the antenna size. The notched frequency bands include WiMAX, INSAT, and lower and upper WLAN. In order to estimate the frequency shifts of the notch due to the coupling of the nearby CSRRs, an analysis of the coupling among the multiple notch resonators is carried out and we construct the lumped-circuit equivalent model. The time domain analysis of the proposed antenna is performed to show its validity on the UWB application. The measured frequency response of the input port corresponds quite well with the calculations and simulations. The radiation pattern of the implemented quad-notched UWB antenna is nearly omnidirectional in the passband.

  13. Effective High-Frequency Permeability of Compacted Metal Powders

    Science.gov (United States)

    Volkovskaya, I. I.; Semenov, V. E.; Rybakov, K. I.

    2018-03-01

    We propose a model for determination of the effective complex permeability of compacted metal-powder media. It is based on the equality of the magnetic moment in a given volume of the media with the desired effective permeability to the total magnetic moment of metal particles in the external high-frequency magnetic field, which arises due to excitation of electric eddy currents in the particles. Calculations within the framework of the proposed model allow us to refine the values of the real and imaginary components of the permeability of metal powder compacts in the microwave band. The conditions of applicability of the proposed model are formulated, and their fulfillment is verified for metal powder compacts in the microwave and millimeter wavelength bands.

  14. Sub-band gap photo-enhanced secondary electron emission from high-purity single-crystal chemical-vapor-deposited diamond

    International Nuclear Information System (INIS)

    Yater, J. E.; Shaw, J. L.; Pate, B. B.; Feygelson, T. I.

    2016-01-01

    Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ∼0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron

  15. Band structure and unconventional electronic topology of CoSi

    Science.gov (United States)

    Pshenay-Severin, D. A.; Ivanov, Y. V.; Burkov, A. A.; Burkov, A. T.

    2018-04-01

    Semimetals with certain crystal symmetries may possess unusual electronic structure topology, distinct from that of the conventional Weyl and Dirac semimetals. Characteristic property of these materials is the existence of band-touching points with multiple (higher than two-fold) degeneracy and nonzero Chern number. CoSi is a representative of this group of materials exhibiting the so-called ‘new fermions’. We report on an ab initio calculation of the electronic structure of CoSi using density functional methods, taking into account the spin-orbit interactions. The linearized \

  16. Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

    KAUST Repository

    Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, Dalaver H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

    2013-01-01

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

  17. Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

    KAUST Repository

    Waterhouse, G. I. N.

    2013-10-10

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

  18. Relativistic band-structure calculations for electronic properties of actinide dioxides

    International Nuclear Information System (INIS)

    Maehira, Takahiro; Hotta, Takashi

    2007-01-01

    Energy band structures of actinide dioxides AnO 2 (An=Th, U, Np, and Pu) are investigated by a relativistic linear augmented-plane-wave method with the exchange-correlation potential in a local density approximation (LDA). It is found in common that the energy bands in the vicinity of the Fermi level are mainly due to the hybridization between actinide 5f and oxygen 2p electrons. By focusing on the crystalline electric field states, we point out the problem in the application of the LDA to AnO 2

  19. First-principles calculations of structural, electronic and optical properties of CdxZn1-xS alloys

    KAUST Repository

    Noor, Naveed Ahmed; Ikram, Nazma; Ali, Sana Zulfiqar; Nazir, Safdar; Alay-E-Abbas, Syed Muhammad; Shaukat, Ali

    2010-01-01

    Structural, electronic and optical properties of ternary alloy system CdxZn1-xS have been studied using first-principles approach based on density functional theory. Electronic structure, density of states and energy band gap values for CdxZn1-xS

  20. The development for C-band whole sealed vacuum accelerating tuber

    International Nuclear Information System (INIS)

    Zhou Wenzhen; Zhang Xiangyang; Ding Shulin; Hu Jinquan; Yang Zhenyuan

    1999-01-01

    S-Band standing wave electron linacs have got wide-ranging application for industry nondestructive testing and formed varied kinds of products. X-band electron linac for NDT has been developed by Schonberg Company USA in 1985. Because of bigger structure of S-band linac and difficult machining of X-Band linac, an C-band portable linac for NDT has been developed in CIAE at present, a whole sealed vacuum accelerating tuber will be given here. It consists of 4 cavities, the phase velocity of the first two cavities is 0.5 and 0.9, respectively, and that of the second two cavities is 1. The high power testing proved that the design of the accelerating tuber is good for 1.5 MeV electron linac for NDT

  1. Electronic structure of the rotation twin stacking fault in β-ZnS

    International Nuclear Information System (INIS)

    Northrup, J.E.; Cohen, M.L.

    1981-01-01

    The electronic structure of the rotation twin stacking fault in β-ZnS is calculated with the self-consistent pseudopotential method. The stacking fault creates a potential barrier of approx.0.07 eV and induces the localization of stacking-fault resonances near the top of the valence band. Stacking-fault states are also predicted to exist in the various gaps in the projected valence-band structure

  2. Electronic structures and band gaps of chains and sheets based on phenylacetylene units

    International Nuclear Information System (INIS)

    Kondo, Masakazu; Nozaki, Daijiro; Tachibana, Masamitsu; Yumura, Takashi; Yoshizawa, Kazunari

    2005-01-01

    We investigate the electronic structures of polymers composed of π-conjugated phenylacetylene (PA) units, m-PA-based and p-PA-based wires, at the extended Hueckel level of theory. It is demonstrated that these conjugated systems should have a variety of electric conductance. All of the one-dimensional (1D) chains and the two-dimensional (2D) sheet based on the m-PA unit are insulators with large band gaps of 2.56 eV because there is no effective orbital interaction with neighboring chains. On the other hand, p-PA-based 1D chains have relatively small band gaps that decrease with an increase in chain width (1.17-1.74 eV) and are semiconductive. The p-PA-based sheet called 'graphyne', a 2D-limit of the p-PA-based 1D chains, shows a small band gap of 0.89 eV. The variety of band electronic structures is discussed in terms of frontier crystal orbitals

  3. Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

    Science.gov (United States)

    Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

    2016-08-10

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

  4. Giant modulation of the electronic band gap of carbon nanotubes by dielectric screening

    NARCIS (Netherlands)

    Aspitarte, Lee; McCulley, Daniel R.; Bertoni, Andrea; Island, J.O.; Ostermann, Marvin; Rontani, Massimo; Steele, G.A.; Minot, Ethan D.

    2017-01-01

    Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be strongly driven by electron-electron (e-e) interactions and

  5. High-gradient breakdown studies of an X-band Compact Linear Collider prototype structure

    Directory of Open Access Journals (Sweden)

    Xiaowei Wu

    2017-05-01

    Full Text Available A Compact Linear Collider prototype traveling-wave accelerator structure fabricated at Tsinghua University was recently high-gradient tested at the High Energy Accelerator Research Organization (KEK. This X-band structure showed good high-gradient performance of up to 100  MV/m and obtained a breakdown rate of 1.27×10^{−8} per pulse per meter at a pulse length of 250 ns. This performance was similar to that of previous structures tested at KEK and the test facility at the European Organization for Nuclear Research (CERN, thereby validating the assembly and bonding of the fabricated structure. Phenomena related to vacuum breakdown were investigated and are discussed in the present study. Evaluation of the breakdown timing revealed a special type of breakdown occurring in the immediately succeeding pulse after a usual breakdown. These breakdowns tended to occur at the beginning of the rf pulse, whereas usual breakdowns were uniformly distributed in the rf pulse. The high-gradient test was conducted under the international collaboration research program among Tsinghua University, CERN, and KEK.

  6. Ab-initio electronic band structure calculations for beryllium chalcogenides

    International Nuclear Information System (INIS)

    Kalpana, G.; Pari, G.; Yousuf, Mohammad

    1997-01-01

    The first principle tight-binding linear muffin-tin orbital method within the local density approximation (LDA) has been used to calculate the ground state properties, structural phase transition and pressure dependence of band gap of BeS, BeSe and BeTe. We have calculated the energy-volume relations for these compounds in the B3 and B8 phases. The calculated lattice parameters, bulk modulus and the pressure-volume relation were found to be in good agreement with the recent experimental results. The calculated B3→B8 structural transition pressure for BeS, BeSe and BeTe agree well with the recent experimental results. Our calculations show that these compounds are indirect band gap (Γ-X) semiconductors at ambient conditions. The calculated band gap values are found to be underestimated by 20-30% which is due to the usage of LDA. After the structural transition to the B8 phase, BeS continues to be indirect band gap semiconductors and ultimately above 100 GPa it metallises, BeSe and BeTe are metallic at the B3→B8 structural transition. (author)

  7. Tight binding electronic band structure calculation of achiral boron nitride single wall nanotubes

    International Nuclear Information System (INIS)

    Saxena, Prapti; Sanyal, Sankar P

    2006-01-01

    In this paper we report the Tight-Binding method, for the electronic structure calculations of achiral single wall Boron Nitride nanotubes. We have used the contribution of π electron only to define the electronic band structure for the solid. The Zone-folding method is used for the Brillouin Zone definition. Calculation of tight binding model parameters is done by fitting them to available experimental results of two-dimensional hexagonal monolayers of Boron Nitride. It has been found that all the boron nitride nanotubes (both zigzag and armchair) are constant gap semiconductors with a band gap of 5.27eV. All zigzag BNNTs are found to be direct gap semiconductors while all armchair nanotubes are indirect gap semiconductors. (author)

  8. Analysis and control of wakefields in X-band crab cavities for Compact Linear Collider

    Energy Technology Data Exchange (ETDEWEB)

    Ambattu, P.K., E-mail: praveen-kumar.ambattu@stfc.ac.uk [Cockcroft Institute, Warrington WA4 4AD (United Kingdom); Lancaster University, Lancaster LA1 4 YW (United Kingdom); Burt, G. [Cockcroft Institute, Warrington WA4 4AD (United Kingdom); Lancaster University, Lancaster LA1 4 YW (United Kingdom); Khan, V.F.; Jones, R.M. [Cockcroft Institute, Warrington WA4 4AD (United Kingdom); University of Manchester, Manchester M13 9PL (United Kingdom); Dexter, A. [Cockcroft Institute, Warrington WA4 4AD (United Kingdom); Lancaster University, Lancaster LA1 4 YW (United Kingdom); Dolgashev, V. [SLAC, Menlo Park, CA 94025 (United States)

    2011-11-21

    The Compact Linear Collider requires a crab cavity on each beamline prior to the interaction point to rotate the bunches before collision. The cavities are X-band travelling wave type and are located close to the final doublet of the beam delivery system. This makes the beam very sensitive to transverse momentum imparted by wakefields; hence the wakefields must be tightly controlled. Of special concerns are the orthogonal polarisation of the operating mode and the fundamental monopole mode of the crab cavity. The former mode is at the same frequency as the operating mode of a cylindrically symmetric cavity and the latter one is at a lower frequency and hence is difficult to damp using a single means. In this paper major problematic modes of the crab cavity are investigated and damping requirements for them are calculated. Possibility of meeting the required wakefield control using waveguide damping and choke damping is thoroughly investigated. As a comparison, damped-detuning is also investigated.

  9. Three new chalcohalides, Ba4Ge2PbS8Br2, Ba4Ge2PbSe8Br2 and Ba4Ge2SnS8Br2: Syntheses, crystal structures, band gaps, and electronic structures

    International Nuclear Information System (INIS)

    Lin, Zuohong; Feng, Kai; Tu, Heng; Kang, Lei; Lin, Zheshuai; Yao, Jiyong; Wu, Yicheng

    2014-01-01

    Highlights: • Three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized. • The MQ 5 Br octahedra and GeQ 4 tetrahedra form a three-dimensional framework with Ba 2+ in the channels. • Band Gaps and electronic structures of the three compounds were studied. - Abstract: Single crystals of three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized for the first time. These isostructural compounds crystallize in the orthorhombic space group Pnma. In the structure, the tetra-valent Ge atom is tetrahedrally coordinated with four Q (Q = S, Se) atoms, while the bi-valent M atom (M = Pb, Sn) is coordinated with an obviously distorted octahedron of five Q (Q = S, Se) atoms and one Br atom, showing the stereochemical activity of the ns 2 lone pair electron. The MQ 5 Br (M = Sn, Pb; Q = S, Se) distorted octahedra and the GeQ 4 (Q = S, Se) tetrahedra are connected to each other to form a three-dimensional framework with channels occupied by Ba 2+ cations. Based on UV–vis–NIR spectroscopy measurements and the electronic structure calculations, Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have indirect band gaps of 2.054, 1.952, and 2.066 eV respectively, which are mainly determined by the orbitals from the Ge, M and Q atoms (M = Pb, Sn; Q = S, Se)

  10. Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

    Institute of Scientific and Technical Information of China (English)

    Tai Wang; Yong-Quan Guo; Shuai Li

    2017-01-01

    The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

  11. Development of a coherent THz radiation source based on the ultra-short electron beam and its applications

    International Nuclear Information System (INIS)

    Kuroda, R.; Yasumoto, M.; Toyokawa, H.; Sei, N.; Koike, M.; Yamada, K.

    2011-01-01

    At the National Institute of Advanced Industrial Science and Technology (AIST), a coherent terahertz (THz) radiation source has been developed based on an ultra-short electron beam using an S-band compact electron linac. The designed THz pulse has a high peak power of more than 1 kW in the frequency range 0.1-2 THz. The entire system is located in one research room of about 10 m square. The linac consists of a laser photocathode rf gun (BNL type) with a Cs 2 Te photocathode load-lock system and two 1.5-m-long S-band accelerator tubes. The electron beam can be accelerated up to approximately 42 MeV. The electron bunch was compressed to less than 1 ps (rms) with a magnetic bunch compressor. The coherent synchrotron radiation (CSR) of the THz region was generated from the ultra-short electron bunch at the 90 o bending magnet, and it was extracted from a z-cut quartz window for THz applications. In this work, the THz scanning transmission imaging was successfully demonstrated for measuring the freshness of a vegetable leaf over a period of time.

  12. Crystal structure, electrical properties and electronic band structure of tantalum ditelluride

    CERN Document Server

    Vernes, A; Bensch, W; Heid, W; Naether, C

    1998-01-01

    Motivated by the unexpectedly strong influence of the Te atoms on the structural and bonding properties of the transition metal tellurides, we have performed a detailed study of TaTe sub 2. Experimentally, this comprises a crystal structure determination as well as electrical resistivity measurements. The former analysis leads to an accurate update of the structural data reported in the 1960s, while the latter provides evidence for the mainly electronic character of scattering processes leading to the electrical conductivity. In addition, the electronic properties of TaTe sub 2 have been calculated using the TB-LMTO method. The partial density of states reflects the close connection of the Ta zigzag chains and the Te-Te network. This finding explains the charge transfer in the system in a rather simple way. The orthogonal-orbital character of the bands proved the existence of pi-bonds. The Fermi-surface study supports the interpretation of the experimental resistivity measurements. (author)

  13. Band-structure tailoring and surface passivation for highly efficient near-infrared responsive PbS quantum dot photovoltaics

    Science.gov (United States)

    Zhou, Ru; Niu, Haihong; Ji, Fengwei; Wan, Lei; Mao, Xiaoli; Guo, Huier; Xu, Jinzhang; Cao, Guozhong

    2016-11-01

    PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density surface defects of PbS as two major drawbacks for its use in solar cells severely hamper the photovoltaic performance enhancement. In this work, a modified solution-based successive ionic layer adsorption and reaction (SILAR) utilizing mixed cationic precursors of Pb2+ and Cd2+ is explored, and such a scheme offers two benefits, band-structure tailoring and surface passivation. In-situ deposited CdS suppresses the excessive growth of PbS in the mesopores, thereby facilitating the favorable electron injection from PbS to TiO2 in view of the up-shifted CB level of QDs; the intimate interpenetration of two sulfides with each other leads to superior passivation of trap state defects on PbS, which suppresses the interfacial charge recombination. With the construction of photovoltaics based on such a hybrid (Pb,Cd)S/CdS configuration, impressive power conversion efficiency up to 4.08% has been reached, outperforming that of the conventional PbS/CdS pattern (2.95%). This work highlights the great importance of band-structure tailoring and surface passivation for constructing highly efficient PbS QD photovoltaics.

  14. Direct band gap measurement of Cu(In,Ga)(Se,S)2 thin films using high-resolution reflection electron energy loss spectroscopy

    International Nuclear Information System (INIS)

    Heo, Sung; Lee, Hyung-Ik; Park, Jong-Bong; Ko, Dong-Su; Chung, JaeGwan; Kim, KiHong; Kim, Seong Heon; Yun, Dong-Jin; Ham, YongNam; Park, Gyeong Su; Song, Taewon; Lee, Dongho; Nam, Junggyu; Kang, Hee Jae; Choi, Pyung-Ho; Choi, Byoung-Deog

    2015-01-01

    To investigate the band gap profile of Cu(In 1−x ,Ga x )(Se 1−y S y ) 2 of various compositions, we measured the band gap profile directly as a function of in-depth using high-resolution reflection energy loss spectroscopy (HR-REELS), which was compared with the band gap profile calculated based on the auger depth profile. The band gap profile is a double-graded band gap as a function of in-depth. The calculated band gap obtained from the auger depth profile seems to be larger than that by HR-REELS. Calculated band gaps are to measure the average band gap of the spatially different varying compositions with respect to considering its void fraction. But, the results obtained using HR-REELS are to be affected by the low band gap (i.e., out of void) rather than large one (i.e., near void). Our findings suggest an analytical method to directly determine the band gap profile as function of in-depth

  15. Effect of biaxial strain and external electric field on electronic properties of MoS{sub 2} monolayer: A first-principle study

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Chuong V., E-mail: chuongnguyen11@gmail.com [Institute of Research and Development, Duy Tan University, Da Nang (Viet Nam); School of Mechanical Engineering, Le Quy Don Technical University, Ha Noi (Viet Nam); Hieu, Nguyen N. [Institute of Research and Development, Duy Tan University, Da Nang (Viet Nam)

    2016-04-01

    In this work, making use of density functional theory (DFT) computations, we systematically investigate the effect of biaxial strain engineering and external electric field applied perpendicular to the layers on the band gaps and electronic properties of monolayer MoS{sub 2}. The direct-to-indirect band gaps and semiconductor-to-metal transition are observed in monolayer MoS{sub 2} when strain and electric field are applied in our calculation. We show that when the biaxial strain and external electric field are introduced, the electronic properties including band gaps of monolayer MoS{sub 2} can be reduced to zero. Our results provide many useful insights for the wide applications of monolayer MoS{sub 2} in electronics and optoelectronics.

  16. Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

    KAUST Repository

    Tangi, Malleswararao; Mishra, Pawan; Li, Ming-Yang; Shakfa, Mohammad Khaled; Anjum, Dalaver H.; Hedhili, Mohamed N.; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S.

    2017-01-01

    matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2

  17. Tuning of electronic band gaps and optoelectronic properties of binary strontium chalcogenides by means of doping of magnesium atom(s)- a first principles based theoretical initiative with mBJ, B3LYP and WC-GGA functionals

    Science.gov (United States)

    Debnath, Bimal; Sarkar, Utpal; Debbarma, Manish; Bhattacharjee, Rahul; Chattopadhyaya, Surya

    2018-02-01

    First principle based theoretical initiative is taken to tune the optoelectronic properties of binary strontium chalcogenide semiconductors by doping magnesium atom(s) into their rock-salt unit cells at specific concentrations x = 0.0, 0.25, 0.50, 0.75 and 1.0 and such tuning is established by studying structural, electronic and optical properties of designed binary compounds and ternary alloys employing WC-GGA, B3LYP and mBJ exchange-correlation functionals. Band structure of each compound is constructed and respective band gaps under all the potential schemes are measured. The band gap bowing and its microscopic origin are calculated using quadratic fit and Zunger's approach, respectively. The atomic and orbital origins of electronic states in the band structure of any compound are explored from its density of states. The nature of chemical bonds between the constituent atoms in each compound is explored from the valence electron density contour plots. Optical properties of any specimen are explored from the computed spectra of its dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity optical absorption and energy loss function. Several calculated results are compared with available experimental and earlier theoretical data.

  18. Electronic structure of the Zn(O,S)/Cu(In,Ga)Se2 thin-film solar cell interface

    Energy Technology Data Exchange (ETDEWEB)

    Mezher, Michelle [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Garris, Rebekah [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Mansfield, Lorelle M. [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Horsley, Kimberly [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Weinhardt, Lothar [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe Germany; Duncan, Douglas A. [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Blum, Monika [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Rosenberg, Samantha G. [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Bär, Marcus [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin Germany; Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus Germany; Ramanathan, Kannan [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Heske, Clemens [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe Germany

    2016-03-10

    The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 +/- 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe.

  19. Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1−xOx (Y = S, Se, Te) semiconductors by first-principles calculations

    International Nuclear Information System (INIS)

    Wu Kong-Ping; Zhou Meng-Ran; Huang You-Rui; Gu Shu-Lin; Ye Jian-Dong; Zhu Shun-Ming; Zhang Rong; Zheng You-Dou; Tang Kun

    2013-01-01

    The structural, energetic, and electronic properties of lattice highly mismatched ZnY 1−x O x (Y = S, Se, Te) ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY (Y = S, Se, Te) at octahedral sites in a semiconductor by the calculations of density of states (DOS), leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands (IBs) in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Auger-electron spectroscopy investigation of thin Ag-As-S-Se films

    International Nuclear Information System (INIS)

    Todorov, R; Spasov, G; Petkov, K; Tasseva, J

    2010-01-01

    The photoinduced changes in the refractive index and optical band-gap of thin As 32 S 34 Se 34 films photodoped with silver were studied using spectrophotometric methods. The compositional profile of the films was revealed by means of Auger-electron spectroscopy.

  1. Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions

    Science.gov (United States)

    Kuroda, Tatsuya; Mori, Nobuya

    2018-04-01

    The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists (or is absent) at the heterointerface. Both type-A and type-B MoS2/WS2 heterojunctions can support a higher BTB current than MoS2 and WS2 homojunctions. For type-A heterojunctions, the resonant enhancement of J occurs resulting in a significantly higher BTB tunneling current.

  2. Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory

    Energy Technology Data Exchange (ETDEWEB)

    Morozova, N. K., E-mail: MorozovaNK@mail.ru; Kanakhin, A. A.; Miroshnikova, I. N. [Moscow Power Engineering Institute, National Research University (Russian Federation); Galstyan, V. G. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2013-08-15

    The microcathodoluminescence (MCL) and photoreflection spectra of CdS:O layers implanted with oxygen ions to 4 Multiplication-Sign 10{sup 20} cm{sup -3} are investigated. Used method of MCL spectroscopy yields information only about the implanted-layer volume. Exciton MCL spectra, which allow one to determine the concentration of dissolved oxygen in the CdS:O layers and the influence of deviation of the substrates from stoichiometry, are recorded. The homogeneity of the ion-implanted layers is studied by cathodoluminescence (CL) scanning electron microscopy. The relationship between light-emitting areas and the luminescence band at {approx}630 nm is established. The reason for enhancement of this band upon radiation annealing is revealed and its nature as the luminescence of F{sup +} centers in CdS is confirmed. New photoreflection spectroscopy data are obtained, which describe the specific behavioral features of oxygen on the layer surface as an isoelectronic impurity in highly mismatched alloys (HMAs). It is shown that sulfur completely bonds and removes oxygen from CdS:O. Oxygen-free CdS remains on the surface in the form of nanoparticles, the size of which depends on the oxygen concentration in the CdS:O layer bulk. The results obtained are in agreement with the predictions of band anticrossing theory.

  3. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

    2017-10-15

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    International Nuclear Information System (INIS)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao

    2017-01-01

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm"2 V"-"1 s"-"1, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE_V) and conduction band offsets (ΔE_C) were determined as 0.09 and 0.83 eV, respectively. The ΔE_C was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE_C, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Experimental studies of narrow band effects in the actinides

    Energy Technology Data Exchange (ETDEWEB)

    Brodsky, M.B.

    1976-01-01

    In many actinide metallic systems the f-electrons exhibit band behavior. This is a consequence of direct f-f wave function overlap or hybridization of f-electrons with s-, p-, and d-electrons. The f-bands can be responsible for large electronic densities of states at the Fermi level which may lead to band magnetism of various types. Although the concept of valence instabilities must be approached cautiously especially in the light actinides, it would not be surprising to observe them in the future, especially in Am compounds.

  6. Experimental studies of narrow band effects in the actinides

    International Nuclear Information System (INIS)

    Brodsky, M.B.

    1976-01-01

    In many actinide metallic systems the f-electrons exhibit band behavior. This is a consequence of direct f-f wave function overlap or hybridization of f-electrons with s-, p-, and d-electrons. The f-bands can be responsible for large electronic densities of states at the Fermi level which may lead to band magnetism of various types. Although the concept of valence instabilities must be approached cautiously especially in the light actinides, it would not be surprising to observe them in the future, especially in Am compounds

  7. A study of electron-positron pair equilibria in models of compact X- and gamma-ray sources

    International Nuclear Information System (INIS)

    Bjoernsson, G.

    1990-01-01

    Thermal electron-positron pair equilibria in two temperature models of compact x ray and gamma ray sources are studied. The pairs are assumed to be heated by Coulomb interaction with the much hotter protons and cooled by bremsstrahlung emission, Compton scattering, and annihilation. Two parameters, the proton optical depth and the compactness, characterize each equilibrium state. It is shown that a careful account of the energy balance is very important when the stability properties of the pair equilibria in a spherical plasma cloud are determined. The equilibria are found to be unstable in a very limited range of compactness and proton optical depth. This particular instability is unlikely to be the cause of the observed variability of the compact sources and implies that it is possible to build up high pair densities by a thermal mechanism in two temperature environments. The most important result considers the effects of pairs on the structure of geometrically and effectively optically thin accretion disks. A new approach for solving for the equilibrium structure of the disks is presented. In effect, the pair equilibrium states are projected into the space spanned by the disk structure parameters. This allows a direct visualization of all possible disk solutions at once. Each solution profile needs to be calculated only once and a complete disk solution is obtained by a simple radial coordinate transformation. The disk solutions are thus seen to be scale free in terms of the radial coordinate as well as in terms of the mass of the central object and the accretion rate. Two particular disk solutions are given. It is shown that including electron-positron pairs in the disk structure calculations leads to a breakdown of the thin disk assumptions and that more detailed disk modeling is required before electron-positron pairs can be self-consistently included

  8. Accelerator for medical applications and electron acceleration by laser plasma

    International Nuclear Information System (INIS)

    Hosokai, Tomonao; Uesaka, Mitsuru

    2006-01-01

    In this article, the current status of radiation therapies in Japan and updated medical accelerators are reviewed. For medical use, there is a strong demand of a compact and flexible accelerator. At present, however, we have only two choices of the S-band linac with one or two rotation axis combined with the multi leaf collimator, or the X-band linac with a rather flexible robotic arm. In addition, the laser plasma cathode that is the second generation of the laser wake-field accelerator (LWFA) is studied as a high-quality electron source for medical use though it is still at the stage of the basic research. The potential of LWFA as medical accelerator near future is discussed based on updated results of laser plasma cathode experiment in Univ. of Tokyo. (author)

  9. TlHgInS 3 : An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hao; Malliakas, Christos D.; Han, Fei; Chung, Duck Young; Kanatzidis, Mercouri G.

    2015-08-11

    The quaternary compound TlHgInS3 crystallizes in a new structure type of space group, C2/c, with cell parameters a = 13.916(3) angstrom, b = 3.9132(8) angstrom, c = 21.403(4) angstrom, beta = 104.16(3)degrees, V = 1130.1(8) angstrom(3), and rho = 7.241 g/cm(3). The structure is a unique three-dimensional framework with parallel tunnels, which is formed by (1)(infinity)[InS33-] infinite chains bridged by linearly coordinated Hg2+ ions. TlHgInS3 is a semiconductor with a band gap of 1.74 eV and a resistivity of similar to 4.32 G Omega cm. TlHgInS3 single crystals exhibit photocurrent response when exposed to Ag X-rays. The mobility-lifetime product (mu tau) of the electrons and holes estimated from the photocurrent measurements are (mu tau)(e) approximate to 3.6 x 10(-4) cm(2)/V and (mu tau)(h) approximate to 2.0 x 10(-4) cm(2)/V. Electronic structure calculations at the density functional theory level indicate an indirect band gap and a relatively small effective mass for both electrons and holes. Based on the photoconductivity data, TlHgInS3 is a potential material for radiation detection applications.

  10. Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation.

    Science.gov (United States)

    Chirayath, V A; Callewaert, V; Fairchild, A J; Chrysler, M D; Gladen, R W; Mcdonald, A D; Imam, S K; Shastry, K; Koymen, A R; Saniz, R; Barbiellini, B; Rajeshwar, K; Partoens, B; Weiss, A H

    2017-07-13

    Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

  11. Photoelectric emission from negative-electron-affinity diamond (111) surfaces: Exciton breakup versus conduction-band emission

    International Nuclear Information System (INIS)

    Bandis, C.; Pate, B.B.

    1995-01-01

    We have recently reported that bound electron-hole pairs (Mott-Wannier excitons) are the dominant source of photoelectron emission from specially prepared [''as-polished'' C(111)-(1x1):H] negative-electron-affinity diamond surfaces for near-band-gap excitation up to 0.5 eV above threshold [C. Bandis and B. B. Pate, Phys. Rev. Lett. 74, 777 (1995)]. It was found that photoexcited excitons transport to the surface, break up, and emit their electron. In this paper, we extend the study of exciton-derived emission to include partial yield (constant final-state) analysis as well as angular distribution measurements of the photoelectric emission. In addition, we find that exciton-derived emission does not always dominate. Photoelectric emission properties of the in situ ''rehydrogenated'' (111)-(1x1):H diamond surface are characteristically different than emission observed from the as-polished (111)-(1x1):H surface. The rehydrogenated surface has additional downward band bending as compared to the as-polished surface. In confirmation of the assignment of photoelectric yield to exciton breakup emission, we find a significant enhancement of the total electron yield when the downward band bending of the hydrogenated surface is increased. The functional form of the observed total electron yield demonstrates that, in contrast to the as-polished surface, conduction-band electrons are a significant component of the observed photoelectric yield from the in situ hydrogenated (111)-(1x1):H surface. Furthermore, electron emission characteristics of the rehydrogenated surface confirms our assignment of a Fan phonon-cascade mechanism for thermalization of excitons

  12. Ab initio electronic band structure study of III-VI layered semiconductors

    Science.gov (United States)

    Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

    2013-08-01

    We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  13. Electronic and structural properties of MgS and CaS

    International Nuclear Information System (INIS)

    Madu, C.A.; Onwuagba, B.N.

    2005-12-01

    The electronic and structural properties of MgS and CaS rocksalt structure are studied with the first principle full Potential Linearized Augmented Plane Wave (FP-LAPW) method. The exchange-correlation potential was calculated within the Generalized Gradient Approximation (GGA) using the Perdew-Burke-Ernzerhof (PBE-GGA) scheme. The scalar relativistic approach was adopted for the valence states, whereas the core states are treated fully relativistically. Energy band structures, density of states and structural parameters of both compounds are presented and discussed in context with the available theoretical and experimental studies. Our results are good and show reasonable agreement with previous results even though sufficient experimental values are not available for more realistic comparison. (author)

  14. Study of electronic and structural properties of CaS

    International Nuclear Information System (INIS)

    Mirfenderski, M.; Akbarzdeh, H.; Mokhtari, A.

    2003-01-01

    The electronic and structural properties of CaS are calculated using full potential linearized augmented plane wave method within the local density approximation and generalized gradient approximation for the exchange -correlation energy. For both structures, NaCl structure (B1) and CsCl structure (B2), the obtained values for lattice parameters, bulk modulus and its pressure derivative and transition pressure are in reasonable agreement with the experimental values. For electronic properties, the obtained value for band gap is smaller than the experimental value as well as other calculated results based on density functional theory. Engel and Vosko calculated an exchange potential for some atoms within the so-called optimize-potential model and then used the virial relation and constructed a new exchange-correlation functional. We used that functional and obtained reasonable results for band gap. Finally we investigated the possibility for a third phase ( Zinc Blend structure) for this crystal

  15. Auger-electron spectroscopy investigation of thin Ag-As-S-Se films

    Energy Technology Data Exchange (ETDEWEB)

    Todorov, R; Spasov, G; Petkov, K; Tasseva, J, E-mail: jordanka@clf.bas.b [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria)

    2010-04-01

    The photoinduced changes in the refractive index and optical band-gap of thin As{sub 32}S{sub 34}Se{sub 34} films photodoped with silver were studied using spectrophotometric methods. The compositional profile of the films was revealed by means of Auger-electron spectroscopy.

  16. Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

    KAUST Repository

    Tangi, Malleswarara

    2017-08-31

    The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.

  17. First-principles studies of electronic, transport and bulk properties of pyrite FeS2

    Directory of Open Access Journals (Sweden)

    Dipendra Banjara

    2018-02-01

    Full Text Available We present results from first principle, local density approximation (LDA calculations of electronic, transport, and bulk properties of iron pyrite (FeS2. Our non-relativistic computations employed the Ceperley and Alder LDA potential and the linear combination of atomic orbitals (LCAO formalism. The implementation of the LCAO formalism followed the Bagayoko, Zhao, and Williams (BZW method, as enhanced by Ekuma and Franklin (BZW-EF. We discuss the electronic energy bands, total and partial densities of states, electron effective masses, and the bulk modulus. Our calculated indirect band gap of 0.959 eV (0.96, using an experimental lattice constant of 5.4166 Å, at room temperature, is in agreement with the measured indirect values, for bulk samples, ranging from 0.84 eV to 1.03 ± 0.05 eV. Our calculated bulk modulus of 147 GPa is practically in agreement with the experimental value of 145 GPa. The calculated, partial densities of states reproduced the splitting of the Fe d bands to constitute the dominant upper most valence and lower most conduction bands, separated by the generally accepted, indirect, experimental band gap of 0.95 eV.

  18. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2001-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  19. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2003-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  20. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2002-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  1. Magnetron based high energy S-band linac system

    International Nuclear Information System (INIS)

    Tiwari, T.; Krishnan, R.; Phatangare, Manoj

    2012-01-01

    This paper deals with the study of magnetron based high energy S-band linear accelerator (linac) system operating at spot frequency 2.998 GHz. The energy and dose are two important parameters of linac system which depend on input power of microwave source and length of linac tube. Here the author has studied how these parameters can be improved for side coupled standing wave S-band linac system

  2. Vacuum currents in braneworlds on AdS bulk with compact dimensions

    Science.gov (United States)

    Bellucci, S.; Saharian, A. A.; Vardanyan, V.

    2015-11-01

    The two-point function and the vacuum expectation value (VEV) of the current density are investigated for a massive charged scalar field with arbitrary curvature coupling in the geometry of a brane on the background of AdS spacetime with partial toroidal compactification. The presence of a gauge field flux, enclosed by compact dimensions, is assumed. On the brane the field obeys Robin boundary condition and along compact dimensions periodicity conditions with general phases are imposed. There is a range in the space of the values for the coefficient in the boundary condition where the Poincaré vacuum is unstable. This range depends on the location of the brane and is different for the regions between the brane and AdS boundary and between the brane and the horizon. In models with compact dimensions the stability condition is less restrictive than that for the AdS bulk with trivial topology. The vacuum charge density and the components of the current along non-compact dimensions vanish. The VEV of the current density along compact dimensions is a periodic function of the gauge field flux with the period equal to the flux quantum. It is decomposed into the boundary-free and brane-induced contributions. The asymptotic behavior of the latter is investigated near the brane, near the AdS boundary and near the horizon. It is shown that, in contrast to the VEVs of the field squared an denergy-momentum tensor, the current density is finite on the brane and vanishes for the special case of Dirichlet boundary condition. Both the boundary-free and brane-induced contributions vanish on the AdS boundary. The brane-induced contribution vanishes on the horizon and for points near the horizon the current is dominated by the boundary-free part. In the near-horizon limit, the latter is connected to the corresponding quantity for a massless field in the Minkowski bulk by a simple conformal relation. Depending on the value of the Robin coefficient, the presence of the brane can either

  3. Spectroscopic studies of dynamically compacted monoclinic ZrO2

    NARCIS (Netherlands)

    Maczka, M.; Lutz, E.T.G.; Verbeek, H.J.; Oskam, K.; Meijerink, A.; Hanuza, J.; Stuivinga, M.E.C.

    1999-01-01

    The properties of dynamically compacted monoclinic zirconia have been studied by X-ray powder diffraction, IR, Raman, EPR and luminescence spectroscopy. Compaction introduces a large number of defects into the sample, which leads to a broadening of the X-ray lines, and IR and Raman bands. Besides,

  4. Electronic structure of ZrS{sub x}Se{sub 2-x} by density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Ghafari, Ailakbar; Moustafa, Mohamed; Janowitz, Christoph; Dwelk, Helmut; Manzke, Recardo [Institut fuer Physik, Humboldt-Universitaet zu Berlin, Newtonstr. 15, D-12489 Berlin (Germany); Bouchani, Arash [Physics Department, Islamic Azad University, Kermanshah Branch (Iran, Islamic Republic of)

    2011-07-01

    The electronic properties of the ZrS{sub x}Se{sub 2-x} (x varies between zero and two) semiconductors have been calculated by density functional theory (using the Wien2K code) employing the full potential Hamiltonian within the Generalized Gradient Approximation (GGA) method. The results obtained for the end members of the series, i.e. ZrS{sub 2} and ZrSe{sub 2} reveal that the valence band maximum and conduction band minimum are located at {gamma} and between {gamma} and K respectively which is in agreement with our photoemission experimental data. Trends in the electronic structure for the whole substitution series are discussed.

  5. Compact 1 × 2 and 2 × 2 Dual Polarized Series-Fed Antenna Array for X-Band Airborne Synthetic Aperture Radar Applications

    Directory of Open Access Journals (Sweden)

    Venkata Kishore Kothapudi

    2018-04-01

    Full Text Available In this paper, compact linear dual polarized series-fed 1 × 2 linear and 2 × 2 planar arrays antennas for airborne SAR applications are proposed. The proposed antenna design consists of a square radiating patch that is placed on top of the substrate, a quarter wave transformer and 50-Ω matched transformer. Matching between a radiating patch and the 50-Ω microstrip line is accomplished through a direct coupled-feed technique with the help of an impedance inverter (λ/4 impedance transformer placed at both horizontal and vertical planes, in the case of the 2 × 2 planar array. The overall size for the prototype-1 and prototype-2 fabricated antennas are 1.9305 × 0.9652 × 0.05106 λ03 and 1.9305 × 1.9305 × 0.05106 λ03, respectively. The fabricated structure has been tested, and the experimental results are similar to the simulated ones. The CST MWS simulated and vector network analyzer measured reflection coefficient (S11 results were compared, and they indicate that the proposed antenna prototype-1 yields the impedance bandwidth > 140 MHz (9.56–9.72 GHz defined by S11 140 MHz for all the individual ports. The surface currents and the E- and H-field distributions were studied for a better understanding of the polarization mechanism. The measured results of the proposed dual polarized antenna were in accordance with the simulated analysis and showed good performance of the S-parameters and radiation patterns (co-pol and cross-pol, gain, efficiency, front-to-back ratio, half-power beam width at the resonant frequency. With these features and its compact size, the proposed antenna will be suitable for X-band airborne synthetic aperture radar applications.

  6. Characterization of ceramic powder compacts

    International Nuclear Information System (INIS)

    Yanai, K.; Ishimoto, S.; Kubo, T.; Ito, K.; Ishikawa, T.; Hayashi, H.

    1995-01-01

    UO 2 and Al 2 O 3 powder packing structures in cylindrical powder compacts are observed by scanning electron microscopy using polished cross sections of compacts fixed by low viscosity epoxy resin. Hard aggregates which are not destroyed during powder compaction are observed in some of the UO 2 powder compacts. A technique to measure local density in powder compacts is developed based on counting characteristic X-ray intensity by energy dispersive X-ray analysis (EDX). The local density of the corner portion of the powder compact fabricated by double-acting dry press is higher than that of the inner portion. ((orig.))

  7. Compact electron storage ring JESCOS with normalconducting or superconducting magnets for X-ray lithography

    International Nuclear Information System (INIS)

    Anton, F.; Klein, U.; Krischel, D.; Anderberg, B.

    1992-01-01

    The layouts of a normal conducting electron storage ring and a storage ring with superconducting bending magnets are presented. The storage rings have a critical wavelength of 1 nm and are designed as compact sources for X-ray lithography. Each ring fits into a shielded room with a diameter of 14 m. (author) 3 refs.; 5 figs.; 1 tab

  8. Compactly supported Wannier functions and algebraic K -theory

    Science.gov (United States)

    Read, N.

    2017-03-01

    In a tight-binding lattice model with n orbitals (single-particle states) per site, Wannier functions are n -component vector functions of position that fall off rapidly away from some location, and such that a set of them in some sense span all states in a given energy band or set of bands; compactly supported Wannier functions are such functions that vanish outside a bounded region. They arise not only in band theory, but also in connection with tensor-network states for noninteracting fermion systems, and for flat-band Hamiltonians with strictly short-range hopping matrix elements. In earlier work, it was proved that for general complex band structures (vector bundles) or general complex Hamiltonians—that is, class A in the tenfold classification of Hamiltonians and band structures—a set of compactly supported Wannier functions can span the vector bundle only if the bundle is topologically trivial, in any dimension d of space, even when use of an overcomplete set of such functions is permitted. This implied that, for a free-fermion tensor network state with a nontrivial bundle in class A, any strictly short-range parent Hamiltonian must be gapless. Here, this result is extended to all ten symmetry classes of band structures without additional crystallographic symmetries, with the result that in general the nontrivial bundles that can arise from compactly supported Wannier-type functions are those that may possess, in each of d directions, the nontrivial winding that can occur in the same symmetry class in one dimension, but nothing else. The results are obtained from a very natural usage of algebraic K -theory, based on a ring of polynomials in e±i kx,e±i ky,..., which occur as entries in the Fourier-transformed Wannier functions.

  9. Circularly Polarized S Band Dual Frequency Square Patch Antenna Using Glass Microfiber Reinforced PTFE Composite

    Directory of Open Access Journals (Sweden)

    M. Samsuzzaman

    2014-01-01

    Full Text Available Circularly polarized (CP dual frequency cross-shaped slotted patch antenna on 1.575 mm thick glass microfiber reinforced polytetrafluoroethylene (PTFE composite material substrate is designed and fabricated for satellite applications. Asymmetric cross-shaped slots are embedded in the middle of the square patch for CP radiation and four hexagonal slots are etched on the four sides of the square patch for desired dual frequency. Different substrate materials have been analysed to achieve the desired operating band. The experimental results show that the impedance bandwidth is approximately 30 MHz (2.16 GHz to 2.19 GHz for lower band and 40 MHz (3.29 GHz to 3.33 GHz for higher band with an average peak gain of 6.59 dBiC and 5.52 dBiC, respectively. Several optimizations are performed to obtain the values of the antenna physical parameters. Moreover, the proposed antenna possesses compactness, light weight, simplicity, low cost, and circularly polarized. It is an attractive candidate for dual band satellite antennas where lower band can be used for uplink and upper band can be used for downlink.

  10. Enhanced electronic and magnetic properties by functionalization of monolayer GaS via substitutional doping and adsorption

    Science.gov (United States)

    Rahman, Altaf Ur; Rahman, Gul; Kratzer, Peter

    2018-05-01

    The structural, electronic, and magnetic properties of two-dimensional (2D) GaS are investigated using density functional theory (DFT). After confirming that the pristine 2D GaS is a non-magnetic, indirect band gap semiconductor, we consider N and F as substitutional dopants or adsorbed atoms. Except for N substituting for Ga (NGa), all considered cases are found to possess a magnetic moment. Fluorine, both in its atomic and molecular form, undergoes a highly exothermic reaction with GaS. Its site preference (FS or FGa) as substitutional dopant depends on Ga-rich or S-rich conditions. Both for FGa and F adsorption at the Ga site, a strong F–Ga bond is formed, resulting in broken bonds within the GaS monolayer. As a result, FGa induces p-type conductivity in GaS, whereas FS induces a dispersive, partly occupied impurity band about 0.5 e below the conduction band edge of GaS. Substitutional doping with N at both the S and the Ga site is exothermic when using N atoms, whereas only the more favourable site under the prevailing conditions can be accessed by the less reactive N2 molecules. While NGa induces a deep level occupied by one electron at 0.5 eV above the valence band, non-magnetic NS impurities in sufficiently high concentrations modify the band structure such that a direct transition between N-induced states becomes possible. This effect can be exploited to render monolayer GaS a direct-band gap semiconductor for optoelectronic applications. Moreover, functionalization by N or F adsorption on GaS leads to in-gap states with characteristic transition energies that can be used to tune light absorption and emission. These results suggest that GaS is a good candidate for design and construction of 2D optoelectronic and spintronics devices.

  11. Compact fiber optic gyroscopes for platform stabilization

    Science.gov (United States)

    Dickson, William C.; Yee, Ting K.; Coward, James F.; McClaren, Andrew; Pechner, David A.

    2013-09-01

    SA Photonics has developed a family of compact Fiber Optic Gyroscopes (FOGs) for platform stabilization applications. The use of short fiber coils enables the high update rates required for stabilization applications but presents challenges to maintain high performance. We are able to match the performance of much larger FOGs by utilizing several innovative technologies. These technologies include source noise reduction to minimize Angular Random Walk (ARW), advanced digital signal processing that minimizes bias drift at high update rates, and advanced passive thermal packaging that minimizes temperature induced bias drift while not significantly affecting size, weight, or power. In addition, SA Photonics has developed unique distributed FOG packaging technologies allowing the FOG electronics and photonics to be packaged remotely from the sensor head or independent axis heads to minimize size, weight, and power at the sensing location(s). The use of these technologies has resulted in high performance, including ARW less than 0.001 deg/rt-hr and bias drift less than 0.004 deg/hr at an update rate of 10 kHz, and total packaged volume less than 30 cu. in. for a 6 degree of freedom FOG-based IMU. Specific applications include optical beam stabilization for LIDAR and LADAR, beam stabilization for long-range free-space optical communication, Optical Inertial Reference Units for HEL stabilization, and Ka band antenna pedestal pointing and stabilization. The high performance of our FOGs also enables their use in traditional navigation and positioning applications. This paper will review the technologies enabling our high-performance compact FOGs, and will provide performance test results.

  12. Statistical analysis of the electronic crosstalk correction in Terra MODIS Band 27

    Science.gov (United States)

    Madhavan, Sriharsha; Sun, Junqiang; Xiong, Xiaoxiong; Wenny, Brian N.; Wu, Aisheng

    2014-10-01

    The first MODerate-resolution Imaging Spectroradiometer (MODIS), also known as the Proto-Flight model (PFM), is on-board the Terra spacecraft and has completed 14 years of on orbit flight as of December 18, 2013. MODIS remotely senses the Earth in 36 spectral bands, with a wavelength range from 0.4 μm to 14.4 μm. The 36 bands can be subdivided into two groups based on their spectral responsivity as Reflective Solar Bands (RSBs) and Thermal Emissive Bands (TEBs). Band 27 centered at 6.77 μm is a TEB used to study the global water vapor distribution. It was found recently that this band has been severely affected by electronic crosstalk. The electronic crosstalk magnitude, its on-orbit change and calibration impact have been well characterized in our previous studies through the use of regularly scheduled lunar observations. Further, the crosstalk correction was implemented in Earth view (EV) images and quantified the improvements of the same. However, improvements remained desirable on several fronts. Firstly, the effectiveness of the correction needed to be analyzed spatially and radiometrically over a number of scenes. Also, the temporal aspect of the correction had to be investigated in a rigorous manner. In order to address these issues, a one-orbit analysis was performed on the Level 1A (L1A) scene granules over a ten year period from 2003 through 2012. Results have been quantified statistically and show a significant reduction of image striping, as well as removal of leaked signal features from the neighboring bands. Statistical analysis was performed by analyzing histograms of the one-orbit granules at a scene and detector level before and after correction. The comprehensive analysis and results reported in this paper will be very helpful to the scientific community in understanding the impacts of crosstalk correction on various scenes and could potentially be applied for future improvements of band 27 calibration and, therefore, its retrieval for the

  13. EXPLORING THE INTERSTELLAR MEDIA OF OPTICALLY COMPACT DWARF GALAXIES

    Energy Technology Data Exchange (ETDEWEB)

    Most, Hans P.; Cannon, John M.; Engstrom, Eric; Fliss, Palmer [Department of Physics and Astronomy, Macalester College, 1600 Grand Avenue, Saint Paul, MN 55105 (United States); Salzer, John J. [Department of Astronomy, Indiana University, 727 East Third Street, Bloomington, IN 47405 (United States); Rosenberg, Jessica L., E-mail: hmost@macalester.edu, E-mail: jcannon@macalester.edu, E-mail: slaz@astro.indiana.edu, E-mail: jrosenb4@gmu.edu [School of Physics, Astronomy, and Computational Science, George Mason University, Fairfax, VA 22030 (United States)

    2013-06-15

    We present new Very Large Array H I spectral line, archival Sloan Digital Sky Survey, and archival Spitzer Space Telescope imaging of eight star-forming blue compact dwarf galaxies that were selected to be optically compact (optical radii <1 kpc). These systems have faint blue absolute magnitudes (M{sub B} {approx}> -17), ongoing star formation (based on emission-line selection by the H{alpha} or [O III] lines), and are nearby (mean velocity = 3315 km s{sup -1} {approx_equal} 45 Mpc). One galaxy in the sample, ADBS 113845+2008, is found to have an H I halo that extends 58 r-band scale lengths from its stellar body. In contrast, the rest of the sample galaxies have H I radii to optical-scale-length ratios ranging from 9.3 to 26. The size of the H I disk in the 'giant disk' dwarf galaxy ADBS 113845+2008 appears to be unusual as compared with similarly compact stellar populations.

  14. Intelligent Controller for a Compact Wide-Band Compositional Infrared Fourier Transform Spectrometer

    Science.gov (United States)

    Yiu, P.; Keymeulen, D.; Berisford, D. F.; Hand, K. P.; Carlson, R. W.

    2013-12-01

    This paper presents the design and integration of an intelligent controller for CIRIS (Compositional InfraRed Interferometric Spectrometer) on a stand-alone field programmable gate array (FPGA) architecture. CIRIS is a novel take on traditional Fourier Transform Spectrometers (FTS) and replaces linearly moving mirrors (characteristic of Michelson interferometers) with a constant-velocity rotating refractor to variably phase shift and alter the path length of incoming light. This design eliminates the need for periodically accelerating/decelerating mirrors inherent to canonical Michelson designs and allows for a compact and robust device that is intrinsically radiation-hard, making it ideal for spaceborne measurements in the near-IR to thermal-IR band (2-12 μm) on planetary exploration missions. A traditional Michelson FTS passes a monochromatic light source (incident light from the sample) through a system of refractors/mirrors followed by a mirror moving linearly in the plane of the incident light. This process selectively blocks certain wavelengths and permits measurement of the sample's absorption rates as a function of the wavelengths blocked to produce an 'inteferogram.' This is subsequently processed using a Fourier transform to obtain the sample's spectrum and ascertain the sample's composition. With our prototype CIRIS instrument in development at Design and Prototype Inc. and NASA-JPL, we propose the use of a rotating refractor spinning at a constant velocity to variably phase shift incident light to the detector as an alternative to a linearly moving mirror. This design eliminates sensitivity to vibrations, minimizing path length and non-linear errors due to minor perturbations to the system, in addition to facilitating compact design critical to meeting the strict volume requirements of spacecraft. Further, this is done without sacrificing spectral resolution or throughput when compared to Michelson or diffractive designs. While Michelson designs

  15. Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging

    Science.gov (United States)

    Kim, Hokwon; Dumcenco, Dumitru; Fregnaux, Mathieu; Benayad, Anass; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier; Lanes Group, Epfl Team; Leti, Cea Team

    The electronic band structure evaluation of two-dimensional metal dichalcogenides is critical as the band structure can be greatly influenced by the film thickness, strain, and substrate. Here, we performed a direct measurement of the band structure of as-grown monolayer MoS2 on single crystalline sapphire by reciprocal-space photoelectron emission microscopy with a conventional laboratory ultra-violet He I light source. Arrays of gold electrodes were deposited onto the sample in order to avoid charging effects due to the insulating substrate. This allowed the high resolution mapping (ΔE = 0.2 eV Δk = 0.05 Å-1) of the valence states in momentum space down to 7 eV below the Fermi level. The high degree of the epitaxial alignment of the single crystalline MoS2 nuclei was verified by the direct momentum space imaging over a large area containing multiple nuclei. The derived values of the hole effective mass were 2.41 +/-0.05 m0 and 0.81 +/-0.05 m0, respectively at Γ and K points, consistent with the theoretical values of the freestanding monolayer MoS2 reported in the literature. HK acknowledges the french CEA Basic Technological Research program (RTB) for funding.

  16. First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta, E-mail: venu.mankad@gmail.com; Mankad, Venu, E-mail: venu.mankad@gmail.com; Jha, Prafulla K., E-mail: venu.mankad@gmail.com [Department of Physics, Maharaja Krishnakumasinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

  17. SiPM arrays and miniaturized readout electronics for compact gamma camera

    Energy Technology Data Exchange (ETDEWEB)

    Dinu, N., E-mail: dinu@lal.in2p3.fr [Laboratory of Linear Accelerator, IN2P3, CNRS, Orsay (France); Imando, T. Ait; Nagai, A. [Laboratory of Linear Accelerator, IN2P3, CNRS, Orsay (France); Pinot, L. [Laboratory of Imaging and Modelisation in Neurobiology and Cancerology, IN2P3, CNRS, Orsay (France); Puill, V. [Laboratory of Linear Accelerator, IN2P3, CNRS, Orsay (France); Callier, S. [Omega Microelectronics Group, CNRS, Palaiseau (France); Janvier, B.; Esnault, C.; Verdier, M.-A. [Laboratory of Imaging and Modelisation in Neurobiology and Cancerology, IN2P3, CNRS, Orsay (France); Raux, L. [Omega Microelectronics Group, CNRS, Palaiseau (France); Vandenbussche, V.; Charon, Y.; Menard, L. [Laboratory of Imaging and Modelisation in Neurobiology and Cancerology, IN2P3, CNRS, Orsay (France)

    2015-07-01

    This article reports on the design and features of a very compact and light gamma camera based on SiPM arrays and miniaturized readout electronics dedicated to tumor localization during radio-guided cancer surgery. This gamma camera, called MAGICS, is composed of four (2×2) photo-detection elementary modules coupled to an inorganic scintillator. The 256 channels photo-detection system covers a sensitive area of 54×53 m{sup 2}. Each elementary module is based on four (2×2) SiPM monolithic arrays, each array consisting of 16 SiPM photo-sensors (4×4) with 3×3 mm{sup 2} sensitive area, coupled to a miniaturized readout electronics and a dedicated ASIC. The overall dimensions of the electronics fit the size of the detector, enabling to assemble side-by-side several elementary modules in a close-packed arrangement. The preliminary performances of the system are very encouraging, showing an energy resolution of 9.8% and a spatial resolution of less than 1 mm at 122 keV.

  18. Optical properties and band structure of atomically thin MoS2

    Science.gov (United States)

    Shan, Jie; Mak, Kin Fai; Lee, Changgu; Hone, James; Heinz, Tony

    2010-03-01

    Atomically thin layers of materials can be expected to exhibit distinct electronic structure and novel properties compared to their bulk counterparts. Layered compounds, for which stable atomically thin samples can be produced, are ideal candidates for such studies. Graphene, a monolayer slice of the graphite crystal, is an illustrative example of both the stability and of the interest and importance of such materials. Here we report a study of thin layers of MoS2, a hexagonal layered bulk semiconductor with an indirect band gap of 1.3 eV. MoS2 samples with layer thickness N down to a monolayer were obtained by mechanical exfoliation. We observed an enhancement of the luminescence quantum yield by more than a factor of 100 in monolayer MoS2 compared to the bulk material. The combination of absorption, photoluminescence, and photoconductivity measurements indicates that a transition to a direct-gap material occurs in the limit of the single MoS2 layer. This result is supported by an earlier first-principles calculation [J. Phys. Chem. C 2007, 111, 16192]. Further, by varying the thickness of the samples, we were able to probe the evolution of the electronic structure for N = 1 -- 6 layers.

  19. Band rejection filter for measurement of electron cyclotron emission during electron cyclotron heating

    International Nuclear Information System (INIS)

    Iwase, Makoto; Ohkubo, Kunizo; Kubo, Shin; Idei, Hiroshi.

    1996-05-01

    For the measurement of electron cyclotron emission from the high temperature plasma, a band rejection filter in the range of 40-60 GHz is designed to reject the 53.2 GHz signal with large amplitude from the gyrotron for the purpose of plasma electron heating. The filter developed with ten sets of three quarters-wavelength coupled by TE 111 mode of tunable resonant cavity has rejection of 50 dB and 3 dB bandwidth of 500 MHz. The modified model of Tschebysheff type for the prediction of rejection is proposed. It is confirmed that the measured rejection as a function of frequency agrees well with the experimental results for small coupling hole, and also clarified that the rejection ratio increases for the large coupling hole. (author)

  20. The Electronic Band Structure of Platinum Oxide (PtO) | Omehe ...

    African Journals Online (AJOL)

    We have performed the electronic band structure of the bulk and monolayer of PtO using the full potential linear muffin-tin orbital and the projector augmented wave method with the density functional theory. We applied the LDA and LDA+U scheme to both methods. It was found out that the LDA calculation of bulk PtO ...

  1. A Novel Compact Wideband TSA Array for Near-Surface Ice Sheet Penetrating Radar Applications

    Science.gov (United States)

    Zhang, Feng; Liu, Xiaojun; Fang, Guangyou

    2014-03-01

    A novel compact tapered slot antenna (TSA) array for near-surface ice sheet penetrating radar applications is presented. This TSA array is composed of eight compact antenna elements which are etched on two 480mm × 283mm FR4 substrates. Each antenna element is fed by a wideband coplanar waveguide (CPW) to coupled strip-line (CPS) balun. The two antenna substrates are connected together with a metallic baffle. To obtain wideband properties, another two metallic baffles are used along broadsides of the array. This array is fed by a 1 × 8 wideband power divider. The measured S11 of the array is less than -10dB in the band of 500MHz-2GHz, and the measured gain is more than 6dBi in the whole band which agrees well with the simulated results.

  2. Spectrum Band Selection in Delay-QoS Constrained Cognitive Radio Networks

    KAUST Repository

    Yang, Yuli

    2014-01-01

    In this paper, a cognitive radio (CR) network with multiple spectrum bands available for secondary users (SUs) is considered. For the SU\\'s active spectrum-band selection, two criteria are developed. One is to select the band with the highest secondary channel power gain, and the other is to select the band with the lowest interference channel power gain to primary users (PUs). With the quality-of-service (QoS) requirement concerning delay, the effective capacity (EC) behaviors over secondary links are investigated for both criteria under two spectrum-sharing constraints. To begin by presenting full benefits in these criteria, the constraint imposed on the secondary transmitter (ST) is the average interference limitation to PUs only. Furthermore, taking into account the ST\\'s battery/energy budget, the ST is imposed by joint constraints on its average interference to PUs, as well as on its own average transmit power. For either constraint, we formulate the ST\\'s optimal transmit power allocation to maximize the SU\\'s EC with both band-selection criteria and, correspondingly, obtain the secondary\\'s power allocation and maximum EC in closed forms. Numerical results demonstrated subsequently substantiate the validity of our derivations and provide a powerful tool for the spectrum-band selection in CR networks with multiple bands available. © 1967-2012 IEEE.

  3. Direct band gap measurement of Cu(In,Ga)(Se,S){sub 2} thin films using high-resolution reflection electron energy loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Heo, Sung [Analytical Engineering Group, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Lee, Hyung-Ik; Park, Jong-Bong; Ko, Dong-Su; Chung, JaeGwan; Kim, KiHong; Kim, Seong Heon; Yun, Dong-Jin; Ham, YongNam; Park, Gyeong Su [Analytical Engineering Group, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); Song, Taewon [Energy lab, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); Lee, Dongho, E-mail: dhlee0333@gmail.com; Nam, Junggyu [PV Development Team, Energy Solution Business Division, Samsung SDI, 467 Beonyeong-ro, Cheonan-si, Chungcheongnam-do 331-330 (Korea, Republic of); Kang, Hee Jae [Department of Physics, Chungbuk National University, Gaesin-dong, Heungdeok-gu, Cheongju, 361-763 (Korea, Republic of); Choi, Pyung-Ho; Choi, Byoung-Deog, E-mail: bdchoi@skku.edu [College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2015-06-29

    To investigate the band gap profile of Cu(In{sub 1−x},Ga{sub x})(Se{sub 1−y}S{sub y}){sub 2} of various compositions, we measured the band gap profile directly as a function of in-depth using high-resolution reflection energy loss spectroscopy (HR-REELS), which was compared with the band gap profile calculated based on the auger depth profile. The band gap profile is a double-graded band gap as a function of in-depth. The calculated band gap obtained from the auger depth profile seems to be larger than that by HR-REELS. Calculated band gaps are to measure the average band gap of the spatially different varying compositions with respect to considering its void fraction. But, the results obtained using HR-REELS are to be affected by the low band gap (i.e., out of void) rather than large one (i.e., near void). Our findings suggest an analytical method to directly determine the band gap profile as function of in-depth.

  4. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

    Directory of Open Access Journals (Sweden)

    Valeri V. Afanas'ev

    2014-01-01

    Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

  5. Experimental Study of Electronic Quantum Interference, Photonic Crystal Cavity, Photonic Band Edge Effects for Optical Amplification

    Science.gov (United States)

    2016-01-26

    AFRL-RV-PS- AFRL-RV-PS- TR-2016-0003 TR-2016-0003 EXPERIMENTAL STUDY OF ELECTRONIC QUANTUM INTERFERENCE , PHOTONIC CRYSTAL CAVITY, PHOTONIC BAND...EDGE EFFECTS FOR OPTICAL AMPLIFICATION Shawn-Yu Lin Rensselaer Polytechnic Institute 110 8th Street Troy, New York 12180 26 Jan 2016 Final Report...2014 – 11 Jan 2016 4. TITLE AND SUBTITLE Experimental Study of Electronic Quantum Interference , Photonic Crystal Cavity, Photonic Band Edge Effects

  6. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  7. Inverse compton light source: a compact design proposal

    Energy Technology Data Exchange (ETDEWEB)

    Deitrick, Kirsten Elizabeth [Old Dominion Univ., Norfolk, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2017-05-01

    In the last decade, there has been an increasing demand for a compact Inverse Compton Light Source (ICLS) which is capable of producing high-quality X-rays by colliding an electron beam and a high-quality laser. It is only in recent years when both SRF and laser technology have advanced enough that compact sources can approach the quality found at large installations such as the Advanced Photon Source at Argonne National Laboratory. Previously, X-ray sources were either high flux and brilliance at a large facility or many orders of magnitude lesser when produced by a bremsstrahlung source. A recent compact source was constructed by Lyncean Technologies using a storage ring to produce the electron beam used to scatter the incident laser beam. By instead using a linear accelerator system for the electron beam, a significant increase in X-ray beam quality is possible, though even subsequent designs also featuring a storage ring offer improvement. Preceding the linear accelerator with an SRF reentrant gun allows for an extremely small transverse emittance, increasing the brilliance of the resulting X-ray source. In order to achieve sufficiently small emittances, optimization was done regarding both the geometry of the gun and the initial electron bunch distribution produced off the cathode. Using double-spoke SRF cavities to comprise the linear accelerator allows for an electron beam of reasonable size to be focused at the interaction point, while preserving the low emittance that was generated by the gun. An aggressive final focusing section following the electron beam's exit from the accelerator produces the small spot size at the interaction point which results in an X-ray beam of high flux and brilliance. Taking all of these advancements together, a world class compact X-ray source has been designed. It is anticipated that this source would far outperform the conventional bremsstrahlung and many other compact ICLSs, while coming closer to performing at the

  8. Photoluminescence of electron beam evaporated CaS:Bi thin films

    CERN Document Server

    Smet, P F; Poelman, D R; Meirhaeghe, R L V

    2003-01-01

    For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

  9. Band resolution of optical spectra of solvated electrons in water, alcohols, and tetrahydrofuran

    International Nuclear Information System (INIS)

    Jou, F.-Y.; Freeman, G.R.

    1979-01-01

    The optical absorption spectra of solvated electrons in water, alcohols, and tetrahydrofuran are empirically resolved into two Gaussian bands and a continuum tail. The first Gaussian band covers most of the low energy side of the spectrum. The second Gaussian band lies at an energy slightly above that of the absorption maximum of the total spectrum. With the exception of tert-butyl alcohol, in water and alcohols the following were observed: (a) the first Gaussian bands have the same half-width, but the oscillator strength in water is about double that in an alcohol; (b) the second Gaussian bands have similar half-widths and oscillator strengths; (c) the continuum tails have similar half-widths, yet that in water possesses only about one third as much oscillator strength as the one in alcohol. In tert-butyl alcohol and tetrahydrofuran the first Gaussian band and the continuum tail each carry nearly half of the total oscillator strength. (author)

  10. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave Particle Interactions

    Science.gov (United States)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D (alpha)) and momentum (D(pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies 10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = +/-1, +/-2,...+/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D alpha and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than D alpha coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than D alpha coefficients for the case n does not = 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of D alpha coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle

  11. X-band RF power sources for accelerator applications

    International Nuclear Information System (INIS)

    Kirshner, Mark F.; Kowalczyk, Richard D.; Wilsen, Craig B.; True, Richard B.; Simpson, Ian T.; Wray, John T.

    2011-01-01

    The majority of medical and industrial linear accelerators (LINACs) in use today operate at S-band. To reduce size and weight, these systems are gradually migrating toward X-band. The new LINACs will require suitable RF components to power them. In anticipation of this market, L-3 Communications Electron Devices Division (EDD) has recently developed a suite of RF sources operating at 9.3 GHz to complement our existing S-band product line. (author)

  12. Effective shunt impedance comparison between s-band standing wave accelerators with on-axis and off-axis couplers

    International Nuclear Information System (INIS)

    Schriber, S.O.; Funk, L.W.; Hutcheon, R.M.

    1976-01-01

    The effective shunt impedances of a side-coupled S-band standing wave accelerating structure and a structure employing on-axis couplers have been compared by measuring the energy of accelerated electrons. Criteria for choosing an on-axis coupled structure compared to side-coupled and ''disk and washer'' accelerating structures are given. (author)

  13. Is MoS2 a robust material for 2D electronics?

    International Nuclear Information System (INIS)

    Lorenz, Tommy; Joswig, Jan-Ole; Seifert, Gotthard; Ghorbani-Asl, Mahdi; Heine, Thomas

    2014-01-01

    A nanoindentation computer experiment has been carried out by means of Born–Oppenheimer molecular-dynamics simulations employing the density-functional based tight-binding method. A free-standing MoS 2 sheet, fixed at a circular support, was indented by a stiff, sharp tip. During this process, the strain on the nanolayer is locally different, with maximum values in the vicinity of the tip. All studied electronic properties—the band gap, the projected density of states, the atomic charges and the quantum conductance through the layer—vary only slightly before they change significantly when the MoS 2 sheet finally is pierced. After strong local deformation due to the indentation process, the electronic conductance in our model still is 80% of its original value. Thus, the electronic structure of single-layer MoS 2 is rather robust upon local deformation. (paper)

  14. UWB Filtering Power Divider with Two Narrow Notch-bands and Wide Stop-band

    Science.gov (United States)

    Wei, Feng; Wang, Xin-Yi; Zou, Xin Tong; Shi, Xiao Wei

    2017-12-01

    A compact filtering ultra-wideband (UWB) microstrip power divider (PD) with two sharply rejected notch-bands and wide stopband is analyzed and designed in this paper. The proposed UWB PD is based on a conventional Wilkinson power divider, while two stub loaded resonators (SLRs) are coupled into two symmetrical output ports to achieve a bandpass filtering response. The simplified composite right/left-handed (SCRLH) resonators are employed to generate the dual notched bands. Defected ground structure (DGS) is introduced to improve the passband performance. Good insertion/return losses, isolation and notch-band rejection are achieved as demonstrated in both simulation and experiment.

  15. Electrostatic noise bands associated with the electron gyrofrequency and plasma frequency in the outer magnetosphere

    International Nuclear Information System (INIS)

    Shaw, R.R.

    1975-01-01

    Naturally occurring noise bands near the electron plasma frequency are frequently detected by the University of Iowa plasma wave experiment on the IMP 6 satellite in the region from just inside the plasmapause to radial distances of about 10 earth radii in the outer magnetosphere. The electric field strength of these noise bands is usually small with electric field spectral densities near 10 -15 volts 2 meter -2 Hz -1 . A wave magnetic field has been detected only in a few unusually intense cases, and in these cases the magnetic field energy density is several orders of magnitude smaller than the electric field energy density. The bands are observed at all magnetic latitudes covered by the IMP 6 orbit (parallelγ/sub m/parallel less than or equal to 45 0 ) and appear to be a permanent feature of the outer magnetosphere. They are found at all local times and occur least frequently in the quadrant from 18 to 24 hours. The bands appear to consist of two distinct spectral types, diffuse and narrow. In both types the center frequency of the noise band is bounded by consecutive harmonics of the electron gyrofrequency, and the bands occur most often between harmonics that are near the local electron plasma frequency. These bands appear to merge continuously into two types of plasma wave emissions that are found in dissimilar regions of the magnetosphere (upper hybrid resonance noise, also called Region 3 noise, inside the plasmasphere and (n + 1/2)f/sub g/ harmonics in the outer magnetosphere). It is suggested that this smooth merging is caused by changes in the plasma wave dispersion relation that occur as the spacecraft moves from the cold plasma within the plasmasphere into the warm non-Maxwellian plasma found in the outer magnetosphere

  16. Simulations of the temporal and spatial resolution for a compact time-resolved electron diffractometer

    Science.gov (United States)

    Robinson, Matthew S.; Lane, Paul D.; Wann, Derek A.

    2016-02-01

    A novel compact electron gun for use in time-resolved gas electron diffraction experiments has recently been designed and commissioned. In this paper we present and discuss the extensive simulations that were performed to underpin the design in terms of the spatial and temporal qualities of the pulsed electron beam created by the ionisation of a gold photocathode using a femtosecond laser. The response of the electron pulses to a solenoid lens used to focus the electron beam has also been studied. The simulated results show that focussing the electron beam affects the overall spatial and temporal resolution of the experiment in a variety of ways, and that factors that improve the resolution of one parameter can often have a negative effect on the other. A balance must, therefore, be achieved between spatial and temporal resolution. The optimal experimental time resolution for the apparatus is predicted to be 416 fs for studies of gas-phase species, while the predicted spatial resolution of better than 2 nm-1 compares well with traditional time-averaged electron diffraction set-ups.

  17. Structural study and electronic band structure investigations of the solid solution Na xCu1-xIn5S8 and its impact on the Cu(In,Ga)Se2/In2S3 interface of solar cells

    International Nuclear Information System (INIS)

    Lafond, A.; Guillot-Deudon, C.; Harel, S.; Mokrani, A.; Barreau, N.; Gall, S.; Kessler, J.

    2007-01-01

    The present work reports investigations on the new In 2 S 3 containing Cu and/or Na compounds, which are expected to be formed at the Cu(In,Ga)Se 2 /In 2 S 3 interface. The knowledge of these materials properties is very important in order to better understand the operation of the devices based on these junction partners. It has been observed that a solid solution Na x Cu 1-x In 5 S 8 exists from CuIn 5 S 8 (x = 0) to NaIn 5 S 8 (x = 1) with a spinel-like structure. The single crystal structure determination shows that indium, copper and sodium atoms are statistically distributed on the tetrahedral sites. XPS investigations on the CuIn 5 S 8 , Na 0.5 Cu 0.5 In 5 S 8 and NaIn 5 S 8 compounds combined with the band gap changes reported in a previous work show that these variations are mainly due to valence band maximum shift; it is moved downward when x increases from 0 to 1. These observations are confirmed by the electron structure calculations based on the density functional theory, which additionally demonstrate that the pure sodium compound has direct gap whereas the copper-containing compounds have indirect gaps

  18. Concept Design of a Multi-Band Shared Aperture Reflectarray/Reflector Antenna

    Science.gov (United States)

    Spence, Thomas; Cooley, Michael; Stenger, Peter; Park, Richard; Li, Lihua; Racette, Paul; Heymsfield, Gerald; Mclinden, Matthew

    2016-01-01

    A scalable dual-band (KaW) shared-aperture antenna system design has been developed as a proposed solution to meet the needs of the planned NASA Earth Science Aerosol, Clouds, and Ecosystem (ACE) mission. The design is comprised of a compact Cassegrain reflector/reflectarray with a fixed pointing W-band feed and a cross track scanned Ka-band Active Electronically Scanned Array (AESA). Critical Sub-scale prototype testing and flight tests have validated some of the key aspects of this innovative antenna design, including the low loss reflector/reflectarray surface.More recently the science community has expressed interest in a mission that offers the ability to measure precipitation in addition to clouds and aerosols. In this paper we present summaries of multiple designs that explore options for realizing a tri-frequency (KuKaW), shared-aperture antenna system to meet these science objectives. Design considerations include meeting performance requirements while emphasizing payload size, weight, prime power, and cost. The extensive trades and lessons learned from our previous dual-band ACE system development were utilized as the foundation for this work.

  19. X-Band Linac Beam-Line for Medical Compton Scattering X-Ray Source

    CERN Document Server

    Dobashi, Katsuhiro; Ebina, Futaro; Fukasawa, Atsushi; Hayano, Hitoshi; Higo, Toshiyasu; Kaneyasu, Tatsuo; Ogino, Haruyuki; Sakamoto, Fumito; Uesaka, Mitsuru; Urakawa, Junji; Yamamoto, Tomohiko

    2005-01-01

    Compton scattering hard X-ray source for 10~80 keV are under construction using the X-band (11.424 GHz) electron linear accelerator and YAG laser at Nuclear Engineering Research laboratory, University of Tokyo. This work is a part of the national project on the development of advanced compact medical accelerators in Japan. National Institute for Radiological Science is the host institute and U. Tokyo and KEK are working for the X-ray source. Main advantage is to produce tunable monochromatic hard ( 10-80

  20. Direct electron acceleration in plasma waveguides for compact high-repetition-rate x-ray sources

    International Nuclear Information System (INIS)

    Lin, M-W; Jovanovic, I

    2014-01-01

    Numerous applications in fundamental and applied research, security, and industry require robust, compact sources of x-rays, with a particular recent interest in monochromatic, spatially coherent, and ultrafast x-ray pulses in well-collimated beams. Such x-ray sources usually require production of high-quality electron beams from compact accelerators. Guiding a radially polarized laser pulse in a plasma waveguide has been proposed for realizing direct laser acceleration (DLA), where the electrons are accelerated by the axial electric field of a co-propagating laser pulse (Serafim et al 2000 IEEE Trans. Plasma Sci. 28 1190). A moderate laser peak power is required for DLA when compared to laser wakefield acceleration, thus offering the prospect for high repetition rate operation. By using a density-modulated plasma waveguide for DLA, the acceleration distance can be extended with pulse guiding, while the density-modulation with proper axial structure can realize the quasi-phase matching between the laser pulses and electrons for a net gain accumulation (York et al 2008 Phys. Rev. Lett. 100 195001; York et al 2008 J. Opt. Soc. Am. B 25 B137; Palastro et al 2008 Phys. Rev. E 77 036405). We describe the development and application of a test particle model and particle-in-cell model for DLA. Experimental setups designed for fabrication of optically tailored plasma waveguides via the ignitor-heater scheme, and for generation and characterization of radially polarized short pulses used to drive DLA, are presented. (paper)

  1. Indication for a K/sup π/ = 0- octupole band in 150Nd from electron scattering

    International Nuclear Information System (INIS)

    Creswell, C.; Hirsch, A.; Bertozzi, W.; Heisenberg, J.; Kowalski, S.; Sargent, C.P.; Turchinetz, W.; Dieperink, A.

    1978-01-01

    Recent electron scattering results on the 0.850 MeV level of 150 Nd, when analyzed in terms of the interacting boson model, are inconsistent with the interpretation of this level as a pure J/sup π/(K) = 2 + (0) state. Very recent (n,n'γ) work has shown this level to be a 1 - , 2 + doublet. Assuming this level to be the band head of a ''K/sup π/ = 0 - '' octupole band, a simple model is used to predict electron scattering form factors for the 0.850 MeV state and a 3 - octupole level observed at 0.931 MeV. Comparison is made between these predicted form factors and recent electron scattering data

  2. Quasiparticle self-consistent GW calculations for PbS, PbSe, and PbTe: Band structure and pressure coefficients

    DEFF Research Database (Denmark)

    Svane, Axel; Christensen, Niels Egede; Cardona,, M.

    2010-01-01

    The electronic band structures of PbS, PbSe, and PbTe in the rocksalt structure are calculated with the quasiparticle self-consistent GW (QSGW) approach with spin-orbit coupling included. The semiconducting gaps and their deformation potentials as well as the effective masses are obtained. The GW...

  3. Simultaneous measurements of ion and electron currents using a novel compact electrostatic end-loss-current detector

    Science.gov (United States)

    Hirata, M.; Miyake, Y.; Cho, T.; Kohagura, J.; Numakura, T.; Shimizu, K.; Ito, M.; Kiminami, S.; Morimoto, N.; Hirai, K.; Yamagishi, T.; Miyata, Y.; Nakashima, Y.; Miyoshi, S.; Ogura, K.; Kondoh, T.; Kariya, T.

    2006-10-01

    For the purpose of end-loss-ion and -electron analyses in open-field plasmas, a compact-sized electrostatic end-loss-current detector is proposed on the basis of a self-collection principle for suppressing the effects of secondary-electron emission from a metal collector. For employing this specific method, it is worth noting that no further additional magnetic systems except the ambient open-ended magnetic fields are required in the detector operation. This characteristic property provides a compactness of the total detection system and availability for its use in plasma confinement devices without disturbing plasma-confining magnetic fields. The detector consists of a set of parallel metal plates with respect to lines of ambient magnetic forces of a plasma device for analyzing incident ion currents along with a grid for shielding the collector against strays due to the metal-plate biasing. The characterization experiments are carried out by the use of a test-ion-beam line along with an additional use of a Helmholtz coil system for the formation of open magnetic fields similar to those in the GAMMA 10 end region. The applications of the developed end-loss-current detector in the GAMMA 10 plasma experiments are demonstrated under the conditions with simultaneous incidence of energetic electrons produced by electron-cyclotron heatings for end-loss-plugging potential formation.

  4. The formation of α-phase SnS nanorods by PVP assisted polyol synthesis: Phase stability, micro structure, thermal stability and defects induced energy band transitions

    Energy Technology Data Exchange (ETDEWEB)

    Baby, Benjamin Hudson; Mohan, D. Bharathi, E-mail: d.bharathimohan@gmail.com

    2017-05-01

    We report the formation of single phase of SnS nanostructure through PVP assisted polyol synthesis by varying the source concentration ratio (Sn:S) from 1:1M to 1:12M. The effect of PVP concentration and reaction medium towards the preparation of SnS nanostructure is systematically studied through confocal Raman spectrometer, X-ray diffraction, thermogravimetry analysis, scanning electron microscope, transmission electron microscopy, X-ray photoelectron spectroscopy, UV–Vis–NIR absorption and fluorescence spectrophotometers. The surface morphology of SnS nanostructure changes from nanorods to spherical shape with increasing PVP concentration from 0.15M to 0.5M. Raman analysis corroborates that Raman active modes of different phases of Sn-S are highly active when Raman excitation energy is slightly greater than the energy band gap of the material. The presence of intrinsic defects and large number of grain boundaries resulted in an improved thermal stability of 20 °C during the phase transition of α-SnS. Band gap calculation from tauc plot showed the direct band gap of 1.5 eV which is attributed to the single phase of SnS, could directly meet the requirement of an absorber layer in thin film solar cells. Finally, we proposed an energy band diagram for as synthesized single phase SnS nanostructure based on the experimental results obtained from optical studies showing the energy transitions attributed to band edge transition and also due to the presence of intrinsic defects. - Highlights: • PVP stabilizes the orthorhombic (α) phase of SnS. • Optical band gap of P type SnS tuned by PVP for photovoltaic applications. • The formation of Sn rich SnS phase is investigated through XPS analysis. • Intrinsic defects enhance the thermal stability of α-SnS. • The feasibility of energy transition liable to point defects is discussed.

  5. SINGLE-BAND, TRIPLE-BAND, OR MULTIPLE-BAND HUBBARD MODELS

    NARCIS (Netherlands)

    ESKES, H; SAWATZKY, GA

    1991-01-01

    The relevance of different models, such as the one-band t-J model and the three-band Emery model, as a realistic description of the electronic structure of high-T(c) materials is discussed. Starting from a multiband approach using cluster calculations and an impurity approach, the following

  6. Size-dependent and intra-band photoluminescence of NiS2 nano-alloys synthesized by microwave assisted hydrothermal technique

    International Nuclear Information System (INIS)

    Linganiso, Ella Cebisa; Mhlanga, Sabelo Dalton; Coville, Neil John; Mwakikunga, Bonex Wakufwa

    2013-01-01

    Graphical abstract: Unexpected ultra-violet (UV) emission as well as near infra-red (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions due to the smaller crystallite size of the capped NiS 2 nanostructures was also observed. Band energy and local density of states calculation for NiS 2 were used to support the experimentally observed luminescence results. The luminescence features at wavelengths of 400 nm (3.10 eV), 428 nm (2.90 eV), 447 nm (2.77 eV) and 464 nm (2.67) can be attributed to some of those electrons de-exciting from S (3p) levels down to the Ni (3d) (blue to UV emission) whereas those features at wavelengths of 710 nm (1.75 eV), 751 nm (1.65 eV), 754 nm (1.64 eV) [NiS 2 /HDA-capped NiS 2 ] and 784 nm (1.58 eV) respectively seem to result from de-excitations between either Ni(3d) or S (3s, 3p) levels and Ni–S hybridization levels (red to near IR emission). Highlights: ► Rapid solid state alloying of Ni and S from their liquid state precursor by microwaves. ► New photoluminescence data of NiS 2 system. ► Unexpected luminescence in the UV–Visible and near IR ranges for such a metal matrix alloy. ► Explanation of NiS 2 photoluminescence from ab initio calculations by electronic energy band structure and density of states. -- Abstract: Synthesis of nickel disulfide (NiS 2 ) nano-alloys capped and uncapped with hexadecylamine (HDA) was carried out. A cubic phase NiS 2 formation was confirmed by X-ray diffraction (XRD) analysis. An average crystallite size of 35 nm was obtained for the uncapped nanostructures and 9 nm was obtained for the capped nanostructures estimated using the Scherrer equation. Unexpected ultra-violet (UV) emission as well as near infrared (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions

  7. Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

    International Nuclear Information System (INIS)

    Hao, X.; Moodera, J.S.; Meservey, R.

    1989-01-01

    The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

  8. Hot super-dense compact object with particular EoS

    Science.gov (United States)

    Tito, E. P.; Pavlov, V. I.

    2018-03-01

    We show the possibility of existence of a self-gravitating spherically-symmetric equilibrium configuration for a neutral matter with neutron-like density, small mass M ≪ M_{⊙}, and small radius R ≪ R_{⊙}. We incorporate the effects of both the special and general theories of relativity. Such object may be formed in a cosmic cataclysm, perhaps an exotic one. Since the base equations of hydrostatic equilibrium are completed by the equation of state (EoS) for the matter of the object, we offer a novel, interpolating experimental data from high-energy physics, EoS which permits the existence of such compact system of finite radius. This EoS model possesses a critical state characterized by density ρc and temperature Tc. For such an object, we derive a radial distribution for the super-dense matter in "liquid" phase using Tolman-Oppenheimer-Volkoff equations for hydrostatic equilibrium. We demonstrate that a stable configuration is indeed possible (only) for temperatures smaller than the critical one. We derive the mass-radius relation (adjusted for relativistic corrections) for such small (M ≪ M_{⊙}) super-dense compact objects. The results are within the constraints established by both heavy-ion collision experiments and theoretical studies of neutron-rich matter.

  9. A high peak power S-band switching system for the Advanced Photon Source (APS) Linear Accelerator (Linac)

    International Nuclear Information System (INIS)

    Grelick, A. E.

    1998-01-01

    An S-band linear accelerator is the source of particles and front end of the Advanced Photon Source [1] injector. Additionally, it will be used to support a low-energy undulator test line (LEUTL) and to drive a free-electron laser (FEL). To provide maximum linac availability for all uses, an additional modulator-klystron subsystem has been built,and a waveguide-switching and distribution subsystem is now under construction. The combined subsystems provide a hot spare for any of the five S-band transmitters that power the lina cand have been given the additional function of powering an rf gun test stand whenever they are not otherwise needed. Design considerations for the waveguide-switching subsystem, topology selection, timing, control, and system protection provisions are described

  10. Compact electron storage rings

    International Nuclear Information System (INIS)

    Williams, G.P.

    1987-01-01

    There have been many recent developments in the area of compact storage rings. Such rings would have critical wavelengths of typically 10 A, achieved with beam energies of several hundreds of MeV and superconducting dipole fields of around 5 Tesla. Although the primary motivation for progress in this area is that of commercial x-ray lithography, such sources might be an attractive source for college campuses to operate. They would be useful for many programs in materials science, solid state, x-ray microscopy and other biological areas. We discuss the properties of such sources and review developments around the world, primarily in the USA, japan and W. Germany

  11. Mapping Forest Cover and Forest Cover Change with Airborne S-Band Radar

    Directory of Open Access Journals (Sweden)

    Ramesh K. Ningthoujam

    2016-07-01

    Full Text Available Assessments of forest cover, forest carbon stocks and carbon emissions from deforestation and degradation are increasingly important components of sustainable resource management, for combating biodiversity loss and in climate mitigation policies. Satellite remote sensing provides the only means for mapping global forest cover regularly. However, forest classification with optical data is limited by its insensitivity to three-dimensional canopy structure and cloud cover obscuring many forest regions. Synthetic Aperture Radar (SAR sensors are increasingly being used to mitigate these problems, mainly in the L-, C- and X-band domains of the electromagnetic spectrum. S-band has not been systematically studied for this purpose. In anticipation of the British built NovaSAR-S satellite mission, this study evaluates the benefits of polarimetric S-band SAR for forest characterisation. The Michigan Microwave Canopy Scattering (MIMICS-I radiative transfer model is utilised to understand the scattering mechanisms in forest canopies at S-band. The MIMICS-I model reveals strong S-band backscatter sensitivity to the forest canopy in comparison to soil characteristics across all polarisations and incidence angles. Airborne S-band SAR imagery over the temperate mixed forest of Savernake Forest in southern England is analysed for its information content. Based on the modelling results, S-band HH- and VV-polarisation radar backscatter and the Radar Forest Degradation Index (RFDI are used in a forest/non-forest Maximum Likelihood classification at a spatial resolution of 6 m (70% overall accuracy, κ = 0.41 and 20 m (63% overall accuracy, κ = 0.27. The conclusion is that S-band SAR such as from NovaSAR-S is likely to be suitable for monitoring forest cover and its changes.

  12. Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Miyokawa, Norihiko; Sekiya, Takumi; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-09-01

    We fabricated amorphous oxide semiconductor films, a-(Ga{sub 1–x}Zn{sub x})O{sub y}, at room temperature on glass, which have widely tunable band gaps (E{sub g}) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm{sup 2} V{sup −1} s{sup −1} was obtained for E{sub g} = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E{sub g} with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. - Highlights: • Incorporation of H/H{sub 2}O stabilizes the amorphous phase. • Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated. • The increase in band gap comes mostly from the deepening of the valence band maximum level. • Donor level is more likely aligned to the valence band maximum level.

  13. Anisotropy of electron work function and reticular compacting of friable faces of metallic crystals

    International Nuclear Information System (INIS)

    Vladimirov, A.F.

    1999-01-01

    The review and statistical estimate of experimental data on work functions for BCC-, FCC- and HCP - metals (W, Mo, Ta, Nb, Cr, V, Ni, Y) as well as the earlier developed quantum-mechanical statistical model of double electrical layer formation at metal surface and the calculation of an electron work function dipole constituent serve as a basis for the development of a semi-empirical theory of electron work function anisotropy. A coefficient of reticular compacting of friable crystal faces is introduced and statistically estimated. A coefficient of crystal emission anisotropy is also introduced and estimated both theoretically and empirically. The theory permits calculating work functions for all crystal faces and a volumetric constituent of the work function from the measured value of electron work function for a single face [ru

  14. Design of a low emittance and high repetition rate S-band photoinjector

    Science.gov (United States)

    Han, Jang-Hui

    2014-09-01

    As an electron beam injector of X-ray free-electron lasers (FELs), photoinjectors have been developed for the past few decades. Such an injector starting with a photocathode RF gun provides high brightness beams and therefore it is being adopted as an injector of X-ray FELs. In this paper we show how to improve photoinjector performance in terms of emittance and repetition rates by means of injector components optimization, especially with the gun. Transverse emittance at the end of an injector is reduced by optimizing the gun design, gun solenoid position, and accelerating section position. The repetition rate of an injector mainly depends on the gun. It is discussed that a repetition rate of 1 kHz at a normal-conducting S-band photoinjector is feasible by adopting a coaxial RF coupler and improving cooling-water channels surrounding the gun.

  15. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

    International Nuclear Information System (INIS)

    Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

    2016-01-01

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes

  16. High gain harmonic generation free electron lasers enhanced by pseudoenergy bands

    Directory of Open Access Journals (Sweden)

    Takashi Tanaka

    2017-08-01

    Full Text Available We propose a new scheme for high gain harmonic generation free electron lasers (HGHG FELs, which is seeded by a pair of intersecting laser beams to interact with an electron beam in a modulator undulator located in a dispersive section. The interference of the laser beams gives rise to a two-dimensional modulation in the energy-time phase space because of a strong correlation between the electron energy and the position in the direction of dispersion. This eventually forms pseudoenergy bands in the electron beam, which result in efficient harmonic generation in HGHG FELs in a similar manner to the well-known scheme using the echo effects. The advantage of the proposed scheme is that the beam quality is less deteriorated than in other existing schemes.

  17. Synthesis and design of waveguide band-stop filters without out-of-band spurious responses for plasma diagnosis

    Energy Technology Data Exchange (ETDEWEB)

    Montejo-Garai, Jose R., E-mail: jr@etc.upm.es [Departamento de Electromagnetismo y Teoria de Circuitos, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, Madrid 20840 (Spain); Leal-Sevillano, Carlos A. [Departamento de Electromagnetismo y Teoria de Circuitos, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, Madrid 20840 (Spain); Ruiz-Cruz, Jorge A. [Escuela Politecnica Superior, Universidad Autonoma de Madrid, C/Fco. Tomas y Valiente 11, Madrid 28409 (Spain); Rebollar, Jesus M. [Departamento de Electromagnetismo y Teoria de Circuitos, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, Madrid 20840 (Spain); Estrada, Teresa [T. Laboratorio Nacional de Fusion, Asociacion Euratom-CIEMAT, Madrid 28040 (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer A rigorous systematic design process based on circuit synthesis is proposed for band-stop filters. Black-Right-Pointing-Pointer The new compact E-plane waveguide structure reduces drastically the unwanted resonances in a very large pass band. Black-Right-Pointing-Pointer The manufacturing process together with the computation effort is significantly reduced. Black-Right-Pointing-Pointer Experimental results validate the state-of-art electrical responses. - Abstract: Band-stop or notch filters play a crucial role in plasma diagnosis systems to protect receivers from the stray radiation. In this work, a rigorous design process based on circuit synthesis in addition to an extremely compact E-plane waveguide structure is proposed for this kind of filters. On the one hand, the transfer function verifying the rejection specification is analytically obtained, fixing the minimum number of required cavities. On the other hand, a coupling structure that reduces drastically the unwanted resonances in filters with a very large pass band requirement, is presented. This coupling between the rejection cavities and the main rectangular waveguide has additional advantages; (a) unlike typical inductive irises, large coupling coefficients can be implemented (b) a pure E-plane configuration is achieved, which simplifies the manufacturing and also reduces significantly the computational effort. Experimental validation is demonstrated by two pseudo-elliptic fifth-order band-stop filters fabricated and measured in Ka and V bands. In both cases, the filters are free of spurious resonances in their total operation bands.

  18. Synthesis and design of waveguide band-stop filters without out-of-band spurious responses for plasma diagnosis

    International Nuclear Information System (INIS)

    Montejo-Garai, José R.; Leal-Sevillano, Carlos A.; Ruiz-Cruz, Jorge A.; Rebollar, Jesús M.; Estrada, Teresa

    2012-01-01

    Highlights: ► A rigorous systematic design process based on circuit synthesis is proposed for band-stop filters. ► The new compact E-plane waveguide structure reduces drastically the unwanted resonances in a very large pass band. ► The manufacturing process together with the computation effort is significantly reduced. ► Experimental results validate the state-of-art electrical responses. - Abstract: Band-stop or notch filters play a crucial role in plasma diagnosis systems to protect receivers from the stray radiation. In this work, a rigorous design process based on circuit synthesis in addition to an extremely compact E-plane waveguide structure is proposed for this kind of filters. On the one hand, the transfer function verifying the rejection specification is analytically obtained, fixing the minimum number of required cavities. On the other hand, a coupling structure that reduces drastically the unwanted resonances in filters with a very large pass band requirement, is presented. This coupling between the rejection cavities and the main rectangular waveguide has additional advantages; (a) unlike typical inductive irises, large coupling coefficients can be implemented (b) a pure E-plane configuration is achieved, which simplifies the manufacturing and also reduces significantly the computational effort. Experimental validation is demonstrated by two pseudo-elliptic fifth-order band-stop filters fabricated and measured in Ka and V bands. In both cases, the filters are free of spurious resonances in their total operation bands.

  19. Low emittance design of the electron gun and the focusing channel of the Compact Linear Collider drive beam

    Directory of Open Access Journals (Sweden)

    M. Dayyani Kelisani

    2017-04-01

    Full Text Available For the Compact Linear Collider project at CERN, the power for the main linacs is extracted from a drive beam generated from a high current electron source. The design of the electron source and its subsequent focusing channel has a great impact on the beam dynamic considerations of the drive beam. We report the design of a thermionic electron source and the subsequent focusing channels with the goal of production of a high quality beam with a very small emittance.

  20. High Efficiency S-Band 20 Watt Amplifier

    Data.gov (United States)

    National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

  1. Joint density of states of wide-band-gap materials by electron energy loss spectroscopy

    International Nuclear Information System (INIS)

    Fan, X.D.; Peng, J.L.; Bursill, L.A.

    1998-01-01

    Kramers-Kronig analysis for parallel electron energy loss spectroscopy (PEELS) data is developed as a software package. When used with a JEOL 4000EX high-resolution transmission electron microscope (HRTEM) operating at 100 keV this allows us to obtain the dielectric function of relatively wide band gap materials with an energy resolution of approx 1.4 eV. The imaginary part of the dielectric function allows the magnitude of the band gap to be determined as well as the joint-density-of-states function. Routines for obtaining three variations of the joint-density of states function, which may be used to predict the optical and dielectric response for angle-resolved or angle-integration scattering geometries are also described. Applications are presented for diamond, aluminum nitride (AlN), quartz (SiO 2 ) and sapphire (Al 2 O 3 ). The results are compared with values of the band gap and density of states results for these materials obtained with other techniques. (authors)

  2. Electron-Electron and Electron-Phonon interactions effects on the tunnel electronic spectrum of PbS quantum dots

    Science.gov (United States)

    Wang, Hongyue; Lhuillier, Emmanuel; Yu, Qian; Mottaghizadeh, Alireza; Ulysse, Christian; Zimmers, Alexandre; Dubertret, Benoit; Aubin, Herve

    2015-03-01

    We present a tunnel spectroscopy study of the electronic spectrum of single PbS Quantum Dots (QDs) trapped between nanometer-spaced electrodes, measured at low temperature T=5 K. The carrier filling of the QD can be controlled either by the drain voltage in the shell filling regime or by a gate voltage. In the empty QD, the tunnel spectrum presents the expected signature of the 8x degenerated excited levels. In the drain controlled shell filling regime, the levels degeneracies are lifted by the global electrostatic Coulomb energy of the QD; in the gate controlled shell filling regime, the levels degeneracies are lifted by the intra-Coulomb interactions. In the charged quantum dot, electron-phonons interactions lead to the apparition of Franck-Condon side bands on the single excited levels and possibly Franck Condon blockade at low energy. The sharpening of excited levels at higher gate voltage suggests that the magnitude of electron-phonon interactions is decreased upon increasing the electron filling in the quantum dot. This work was supported by the French ANR Grants 10-BLAN-0409-01, 09-BLAN-0388-01, by the Region Ile-de-France in the framework of DIM Nano-K and by China Scholarship Council.

  3. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave-Particle Interactions

    Science.gov (United States)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D(sub (alpha alpha))) and momentum (D(sub pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L=4.6 and 6.8 for electron energies less than or equal to 10 keV. Landau (n=0) resonance and cyclotron harmonic resonances n= +/- 1, +/-2, ... +/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n=+1 and n=+2. A major contribution to momentum diffusion coefficients appears from n=+2. However, the banded structures in D(sub alpha alpha) and D(sub pp) coefficients appear only in the profile of diffusion coefficients for n=+2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The D(sub pp) diffusion coefficient for ECH waves is one to two orders smaller than D(sub alpha alpha) coefficients. For chorus waves, D(sub pp) coefficients are about an order of magnitude smaller than D(sub alpha alpha) coefficients for the case n does not equal 0. In case of Landau resonance, the values of D(sub pp) coefficient are generally larger than the values of D(sub alpha alpha) coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances

  4. Band-Structure of Thallium by the LMTO Method

    DEFF Research Database (Denmark)

    Holtham, P. M.; Jan, J. P.; Skriver, Hans Lomholt

    1977-01-01

    by an energy gap. The 6d and 7s bands were found to be far above the Fermi level and the 5d states were found to be far below it. Fermi surface properties and the electronic specific heat are computed and compared with experiment. The joint density of states has also been computed and is in reasonable...... and p bands for the HCP structure. Energy bands have been evaluated both with and without spin-orbit coupling which is particularly large in thallium. Energy bands close to the Fermi level were found to be mainly 6p like in character. The 6s states lay below the 6p bands and were separated from them......The relativistic band structure of thallium has been calculated using the linear muffin-tin orbital (LMTO) method. The positions and extents of the bands were found to follow the Wigner-Seitz rule approximately, and the origin of the dispersion of the bands was established from the canonical s...

  5. High gradient test of the C-band choke-mode type accelerating structure

    International Nuclear Information System (INIS)

    Inagaki, T.; Shintake, T.; Baba, H.; Togawa, K.; Onoe, K.; Marechal, X.; Takashima, T.; Takahashi, S.; Matsumoto, H.

    2004-01-01

    The C-band (5712 MHz) choke-mode type accelerating structure will be used for SPring-8 Compact SASE-FEL Source (SCSS). To make the accelerator length short, we designed the field gradient as high as 40 MV/m. Since it is higher gradient than other traditional electron accelerators, we have to carefully check its performance (RF breakdown, dark current emission, etc.) in the high gradient test stand. The first experiment will be scheduled in this summer. In this paper, we will describe the preparation progress for the test. (author)

  6. Improving the photovoltaic parameters in Quantum dot sensitized solar cells through employment of chemically deposited compact titania blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Rajendra Prasad, M.B., E-mail: rajendraprasadmb75@gmail.com [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India); National Defence Academy, Khadakwasla, Pune, 411023 (India); Kadam, Vishal [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India); Joo, Oh-Shim [Korea Institute of Science and Technology, PO Box No. 131, Chongryang, Seoul, 130-650 (Korea, Republic of); Pathan, Habib M. [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India)

    2017-06-15

    Incorporation of compact blocking layer at the Transparent Conducting Oxide (TCO)/Electrolyte interface is an effective method to improve the device performance in QDSSC through mitigation of electron recombinations at this interface. This paper reports the most facile and cost effective method of depositing a rutile titania Compact Layer (CL) over Fluorine doped Tin Oxide (FTO) substrate and its application in titania based CdS QD sensitized solar cells. The deposited compact layers are characterized to study their structural, optical, morphological and electrochemical properties using X-Ray Diffractometry, UV–Visible spectroscopy, Scanning electron microscopy, Cyclic Voltammetry and Contact Angle measurements. Sandwich solar cells are fabricated using these CL based electrodes and characterized using Electrochemical Impedance Spectroscopy, Open Circuit Voltage Decay and J-V characteristics. The CL incorporated CdS QDSSC showed more than 100% increase in the photoconversion efficiency (1.68%) as compared to its bare FTO counterpart (0.73%) proving the efficacy of employed strategy. - Highlights: • Deposited titania compact layer by a facile room temperature chemical bath method. • Employed this to mitigate back electron transfer at TCO/Electrolyte interface. • Compact layer incorporation has improved the solar cell performance by 130%.

  7. Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

    Science.gov (United States)

    Ullah, Muhammad S.; Yousuf, Abdul Hamid Bin; Es-Sakhi, Azzedin D.; Chowdhury, Masud H.

    2018-04-01

    Molybdenum disulfide (MoS2) is considered as a promising alternative to conventional semiconductor materials that used in the IC industry because of its novel properties. In this paper, we explore the optical and electronic properties of MoS2 for photodetector and transistors applications. This simulation is done using `DFT materials properties simulator'. Our findings show that mono- and multi-layer MoS2 is suitable for conventional and tunnel FET applications due to direct and indirect band-gap respectively. The bulk MoS2 crystal, which are composed of stacked layers have indirect bandgap and mono-layer MoS2 crystal form direct bandgap at the K-point of Brillouin zone. Indirect bandgap of bulk MoS2 crystal implies that phonons need to be involved in band-to-band tunneling (BTBT) process. Degenerately doped semiconductor, which is basically spinning the Fermi level, changing the DOS profile, and thinning the indirect bandgap that allow tunneling from valence band to conduction band. The optical properties of MoS2 is explored in terms of Absorption coefficient, extinction coefficient and refractive index. Our results shows that a MoS2 based photodetector can be fabricate to detect light in the visible range (below 500nm). It is also observed that the MoS2 is most sensitive for the light of wavelength 450nm.

  8. Comparative analysis of the vibrational structure of the absorption spectra of acrolein in the excited ( S 1) electronic state

    Science.gov (United States)

    Koroleva, L. A.; Tyulin, V. I.; Matveev, V. K.; Pentin, Yu. A.

    2012-04-01

    The assignments of absorption bands of the vibrational structure of the UV spectrum are compared with the assignments of bands obtained by the CRDS method in a supersonic jet from the time of laser radiation damping for the trans isomer of acrolein in the excited ( S 1) electronic state. The ν00 trans = 25861 cm-1 values and fundamental frequencies, including torsional vibration frequency, obtained by the two methods were found to coincide in the excited electronic state ( S 1) for this isomer. The assignments of several absorption bands of the vibrational structure of the spectrum obtained by the CRDS method were changed. Changes in the assignment of (0-v') transition bands of the torsional vibration of the trans isomer in the Deslandres table from the ν00 trans trans origin allowed the table to be extended to high quantum numbers v'. The torsional vibration frequencies up to v' = 5 were found to be close to the frequencies found by analyzing the vibrational structure of the UV spectrum and calculated quantum-mechanically. The coincidence of the barrier to internal rotation (the cis-trans transition) in the one-dimensional model with that calculated quantum-mechanically using the two-dimensional model corresponds to a planar structure of the acrolein molecule in the excited ( S 1) electronic state.

  9. Installation of new Generation General Purpose Computer (GPC) compact unit

    Science.gov (United States)

    1991-01-01

    In the Kennedy Space Center's (KSC's) Orbiter Processing Facility (OPF) high bay 2, Spacecraft Electronics technician Ed Carter (right), wearing clean suit, prepares for (26864) and installs (26865) the new Generation General Purpose Computer (GPC) compact IBM unit in Atlantis', Orbiter Vehicle (OV) 104's, middeck avionics bay as Orbiter Systems Quality Control technician Doug Snider looks on. Both men work for NASA contractor Lockheed Space Operations Company. All three orbiters are being outfitted with the compact IBM unit, which replaces a two-unit earlier generation computer.

  10. A compact CMA spectrometer with axially integrated hybrid electron-ion gun for ISS, AES and sputter depth profile analysis

    International Nuclear Information System (INIS)

    Gisler, E.; Bas, E.B.

    1986-01-01

    Until now, the combined application of electrons and ions in surface analysis required two separate sources for electrons and ions with different incidence angles. The newly developed hybrid electron-ion gun, however, allows bombardment of the same sample area both with noble gas ions and with electrons coming from the same direction. By integrating such a hybrid gun axially in a cylindrical mirror energy analyser (CMA) a sensitive compact single flange spectrometer obtains for ion scattering spectroscopy (ISS), Auger electron spectroscopy (AES), and sputtering all within normal beam incidence. This concept makes accurate beam centering very easy. Additionally, the bombardment from the same direction both for sputtering and for surface analysis brings advantages in depth profiling. The scattering angle for ISS has a constant value of about 138 0 . The hybrid gun delivers typically an electron beam current of -20μA at 3keV for AES, and an ion beam current of +40 nA and +1.2μA at 2 keV for ISS and sputtering respectively. The switching time between ISS, AES, and sputtering mode is about 0.1 s. So this system is best suited for automatically controlled depth profile analysis. The design and operation of this new system will be described and some applications will be discussed. (author)

  11. Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

    Science.gov (United States)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Myronchuk, G. L.; Khvyshchun, M.; Fedorchuk, A. O.; Parasyuk, O. V.; Khyzhun, O. Y.

    2015-04-01

    High-quality single crystal of cesium mercury tetraiodide, Cs2HgI4, has been synthesized by the vertical Bridgman-Stockbarger method and its crystal structure has been refined. In addition, electronic structure and optical properties of Cs2HgI4 have been studied. For the crystal under study, X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces have been measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that the Cs2HgI4 single crystal surface is very sensitive with respect to Ar+ ion-irradiation. In particular, Ar+ bombardment of the single crystal surface alters the elemental stoichiometry of the Cs2HgI4 surface. To elucidate peculiarities of the energy distribution of the electronic states within the valence-band and conduction-band regions of the Cs2HgI4 compound, we have performed first-principles band-structure calculations based on density functional theory (DFT) as incorporated in the WIEN2k package. Total and partial densities of states for Cs2HgI4 have been calculated. The DFT calculations reveal that the I p states make the major contributions in the upper portion of the valence band, while the Hg d, Cs p and I s states are the dominant contributors in its lower portion. Temperature dependence of the light absorption coefficient and specific electrical conductivity has been explored for Cs2HgI4 in the temperature range of 77-300 K. Main optical characteristics of the Cs2HgI4 compound have been elucidated by the first-principles calculations.

  12. Electronic band structure, optical, dynamical and thermodynamic properties of cesium chloride (CsCl from first-principles

    Directory of Open Access Journals (Sweden)

    Bingol Suat

    2015-01-01

    Full Text Available The geometric structural optimization, electronic band structure, total density of states for valence electrons, density of states for phonons, optical, dynamical, and thermodynamical features of cesium chloride have been investigated by linearized augmented plane wave method using the density functional theory under the generalized gradient approximation. Ground state properties of cesium chloride are studied. The calculated ground state properties are consistent with experimental results. Calculated band structure indicates that the cesium chloride structure has an indirect band gap value of 5.46 eV and is an insulator. From the obtained phonon spectra, the cesium chloride structure is dynamically stable along the various directions in the Brillouin zone. Temperature dependent thermodynamic properties are studied using the harmonic approximation model.

  13. Design and analysis of X-band femtosecond linac

    Energy Technology Data Exchange (ETDEWEB)

    Uesaka, M; Kozawa, T; Takeshita, A; Kobayashi, T; Ueda, T; Miya, K [Tokyo Univ., Tokai, Ibaraki (Japan). Nuclear Engineering Research Lab.

    1997-03-01

    Femtosecond quantum phenomena research project is proposed at Nuclear Engineering Research Laboratory, University of Tokyo. The research facility consists of an X-band (11.424GHz) femtosecond electron linac, a femtosecond wavelength tunable laser, two S-band (2.856GHz) picosecond electron linacs and measuring equipments. Especially, we aim to generate a 100 fs (FWHM) electron single bunch with more than 1 nC at the X-band femtosecond linac. Ultrafast processes in radiation physics, chemistry, material science and microscopic electromagnetic phenomena are going to be analyzed there. Here the design and analysis of an X-band femtosecond linac is presented. The simulation of electron dynamics is carried out including magnetic pulse compression by using PARMELA and SUPERFISH. It is found by the simulation that the 600 ps (tail-to-tail) electron emission from a 200 kV thermionic gun can be bunched and compressed to 110 fs (FWHM) with the charge of 0.8 nC which gives 7.3 kA. We plan to use one high power X-band klystron which can supply 60 MW with more than 200 ns pulse duration. The flatness of plateau of the pulse should be 0.2% for stable ultrashort bunch generation. (author)

  14. Modulators for the S-band test linac at DESY

    Science.gov (United States)

    Bieler, M.; Choroba, S.; Hameister, J.; Lewin, H.-Ch.

    1995-07-01

    The development of adequate modulators for high peak power klystrons is one of the focus points for linear collider R&D programs. For the DESY/THD S-band linear collider study 150 MW rf-pulse power at 50 Hz repetition rate and 3 μs pulse duration is required [1]. Two different modulator schemes are under investigation. One is the conventional line type pulser, using a pulse forming network and a step up transformer, the other one is a hard tube pulser, using a dc power source at the full klystron voltage and a switch tube. This paper is focused on the modulator development for the S-band Test Linac at DESY. After a short overview over the test linac and a brief description of the 150 MW S-band klystron the circuitry of the line type pulse (LTP) is given. A hard tube pulser (HTP), which switches the high voltage directly from a storage capacitor to the klystron, has been built up at DESY. Circuitry and the results of the commissioning of the switch tube are reported.

  15. Jupiter's Great Red Spot: compactness condition and stability

    Directory of Open Access Journals (Sweden)

    Jun-Ichi Yano

    Full Text Available Linear Rossby wave dispersion relationships suggest that Jupiter's Great Red Spot (GRS is a baroclinic structure embedded in a barotropic shearing zonal flow. Quasi-geostrophic (QG two-layer simulations support the theory, as long as an infinitely deep zonal flow is assumed. However, once a finite depth of the lower layer is assumed, a self-interaction of the baroclinic eddy component produces a barotropic radiating field, so that the GRS-like eddy can no longer remain compact. Compactness is recovered by explicitly introducing a deep dynamics of the interior for the lower layer, instead of the shallow QG formulation. An implication of the result is a strong coupling of the GRS to a convectively active interior.

  16. First-principles calculations of structural, electronic and optical properties of CdxZn1-xS alloys

    KAUST Repository

    Noor, Naveed Ahmed

    2010-10-01

    Structural, electronic and optical properties of ternary alloy system CdxZn1-xS have been studied using first-principles approach based on density functional theory. Electronic structure, density of states and energy band gap values for CdxZn1-xS are estimated in the range 0 ≤ x ≤ 1 using both the standard local density approximation (LDA) as well as the generalized gradient approximations (GGA) of Wu-Cohen (WC) for the exchange-correlation potential. It is observed that the direct band gap EgΓ-Γ of CdxZn1-xS decreases nonlinearly with the compositional parameter x, as observed experimentally. It is also found that Cd s and d, S p and Zn d states play a major role in determining the electronic properties of this alloy system. Furthermore, results for complex dielectric constant ε(ω), refractive index n(ω), normal-incidence reflectivity R(ω), absorption coefficient α(ω) and optical conductivity σ(ω) are also described in a wide range of the incident photon energy and compared with the existing experimental data. © 2010 Elsevier B.V. All rights reserved.

  17. Effects of gold based dimers on structural and electronic properties of MoS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kadioglu, Yelda [Department of Physics, Adnan Menderes University, 09100 Aydın (Turkey); Gökoğlu, Gökhan [Department of Physics, Karabük University, 78050 Karabük (Turkey); Aktürk, Olcay Üzengi, E-mail: ouzengi@adu.edu.tr [Department of Electrical & Electronics Engineering, Adnan Menderes University, 09100 Aydın (Turkey); Nanotechnology Application and Research Center, Adnan Menderes University, 09100 Aydın (Turkey)

    2017-02-28

    Highlights: • Semiconductor MoS{sub 2} shows metallic character by AuPt and AuPd adsorption. • MoS{sub 2} maintains its semiconductor characteristics with a decrease in the band gap values after AuAg, AuCu, and AuAl adsorption. • AuPt adsorbed system is the most stable structure energetically. • AuAl exhibits the weakest adsorption to MoS{sub 2} among the considered dimers. - Abstract: In view of first principles calculations, we investigate the electronic structure redecoration of monolayer MoS{sub 2} upon adsorptions of AuAg, AuPt, AuPd, AuCu, and AuAl bimetallic dimers. Geometrical structure, band structures, electronic density of states, charge density differences of dimer adsorbed MoS{sub 2} systems are presented and discussed. All the systems studied have non-magnetic ground states. Charge transfers occur from dimer to surface except for AuPt adsorption. Our results indicate that the semiconductor MoS{sub 2} maintains its semiconductor character with decreased band gaps upon AuAg, AuCu, and AuAl adsorptions. However, MoS{sub 2} shows metallic behaviour by AuPt and AuPd adsorptions, so Pt-d and Pd-d states cross Fermi level yielding metallic character. AuPt adsorbed system has the highest E{sub ads} value of 3.15 eV indicating the most stable structure energetically among the dimer adsorbed MoS{sub 2} systems considered.

  18. Band-structure-based collisional model for electronic excitations in ion-surface collisions

    International Nuclear Information System (INIS)

    Faraggi, M.N.; Gravielle, M.S.; Alducin, M.; Silkin, V.M.; Juaristi, J.I.

    2005-01-01

    Energy loss per unit path in grazing collisions with metal surfaces is studied by using the collisional and dielectric formalisms. Within both theories we make use of the band-structure-based (BSB) model to represent the surface interaction. The BSB approach is based on a model potential and provides a precise description of the one-electron states and the surface-induced potential. The method is applied to evaluate the energy lost by 100 keV protons impinging on aluminum surfaces at glancing angles. We found that when the realistic BSB description of the surface is used, the energy loss obtained from the collisional formalism agrees with the dielectric one, which includes not only binary but also plasmon excitations. The distance-dependent stopping power derived from the BSB model is in good agreement with available experimental data. We have also investigated the influence of the surface band structure in collisions with the Al(100) surface. Surface-state contributions to the energy loss and electron emission probability are analyzed

  19. Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

    DEFF Research Database (Denmark)

    Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

    2009-01-01

    Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

  20. The electronic structure of the [Zn(S,O)/ZnS]/CuInS 2 heterointerface - Impact of post-annealing

    Science.gov (United States)

    Bär, M.; Ennaoui, A.; Klaer, J.; Sáez-Araoz, R.; Kropp, T.; Weinhardt, L.; Heske, C.; Schock, H.-W.; Fischer, Ch.-H.; Lux-Steiner, M. C.

    2006-12-01

    Recently, Cd-free wide-gap CuInS 2-based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after post-annealing) showed comparable power conversion efficiencies as CdS-buffered references. To elucidate whether the heat treatment changes the electronic structure of the [Zn(S,O)/ZnS]/CIS heterointerface, which could explain the performance improvement, we have investigated corresponding structures by X-ray and UV photoelectron as well as optical spectroscopy before and after post-annealing. A heat-treatment-induced increase of the band bending in the CIS absorber could be identified, which correlates with an improved open circuit voltage of respective solar cells after post-annealing.

  1. 150-MW S-Band klystron program at the Stanford Linear Accelerator Center

    Energy Technology Data Exchange (ETDEWEB)

    Sprehn, D.; Caryotakis, G.; Phillips, R.M. [Stanford Linear Accelerator Center, Stanford Univ., Stanford, CA (United States)

    1997-04-01

    Two S-Band klystrons operating at 150 MW have been designed, fabricated and tested at the Stanford Linear Accelerator Center (SLAC) during the past two years for use in an experimental accelerator at Deutsches Elektronen Synchrotron (DESY) in Hamburg, Germany. Both klystrons operate at the design power, 60 Hz repetition rate, 3 {mu}s pulsewidth, with an efficiency > 40%, and agreement between the experimental results and simulations is excellent. The 535 kV, 700 A electron gun was tested by constructing a solenoidal focused beam-stick which identified a source of oscillation, subsequently engineered out of the klystron guns. Design of the beam-stick and the two klystrons is discussed, along with observation and suppression of spurious oscillations. Differences in design and the resulting performance of the klystrons is emphasized. (author)

  2. Structural analysis, electronic properties, and band gaps of a graphene nanoribbon: A new 2D materials

    Science.gov (United States)

    Dass, Devi

    2018-03-01

    Graphene nanoribbon (GNR), a new 2D carbon nanomaterial, has some unique features and special properties that offer a great potential for interconnect, nanoelectronic devices, optoelectronics, and nanophotonics. This paper reports the structural analysis, electronic properties, and band gaps of a GNR considering different chirality combinations obtained using the pz orbital tight binding model. In structural analysis, the analytical expressions for GNRs have been developed and verified using the simulation for the first time. It has been found that the total number of unit cells and carbon atoms within an overall unit cell and molecular structure of a GNR have been changed with the change in their chirality values which are similar to the values calculated using the developed analytical expressions thus validating both the simulation as well as analytical results. Further, the electronic band structures at different chirality values have been shown for the identification of metallic and semiconductor properties of a GNR. It has been concluded that all zigzag edge GNRs are metallic with very small band gaps range whereas all armchair GNRs show both the metallic and semiconductor nature with very small and high band gaps range. Again, the total number of subbands in each electronic band structure is equal to the total number of carbon atoms present in overall unit cell of the corresponding GNR. The semiconductors GNRs can be used as a channel material in field effect transistor suitable for advanced CMOS technology whereas the metallic GNRs could be used for interconnect.

  3. Energies of rare-earth ion states relative to host bands in optical materials from electron photoemission spectroscopy

    Science.gov (United States)

    Thiel, Charles Warren

    There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4fN-15d and 4fN+1 states were determined. While the 4fN ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4fN-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4fN, 4fN-1 5d, and 4fN+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence

  4. Characterestics of pico-second single bunch at the S-band linear accelerator

    International Nuclear Information System (INIS)

    Uesaka, Mitsuru; Kozawa, Takahiro; Kobayashi, Toshiaki; Ueda, Toru; Miya, Kenzo

    1994-01-01

    Measurement of the bunch structure of a pico-second single bunch was performed using a femto-second streak camera at the S-band linear accelerator of the University of Tokyo. The aim of this research is to investigate the feasibility of the generation of a femto-second single bunch at the S-band linac. The details of the bunch structure and energy spectrum of an original single bunch were precisely investigated in several operation modes where the RF phases in accelerating tubes and a prebuncher were varied. The femto-second streak camera was utilized to measure the bunch structure by one shot via Cherenkov radiation emitted by the electrons in the bunch. Next, an experiment for magnetic pulse compression of the original single bunch was carried out. Pulse shapes of the compressed bunchs for different energy modulation were also obtained by measuring Cherenkov radiation by one shot using the femto-second streak camera. Prior to the experiment, numerical tracking analysis to determine operating parameters for the magnetic pulse compression was also done. Measured pulse widths were compared with calculated ones. Finally, a 2 ps (full width at half maximum; FWHM) single bunch with an electric charge of 0.3 nC could be generated by the magnetic pulse compression. ((orig.))

  5. Development of a novel thermionic RF electron gun applied on a compact THz-FEL facility

    Science.gov (United States)

    Hu, T. N.; Pei, Y. J.; Qin, B.; Liu, K. F.; Feng, G. Y.

    2018-04-01

    The current requirements from civil and commercial applications lead to the development of compact free-electron laser (FEL)-based terahertz (THz) radiation sources. A picosecond electron gun plays an important role in an FEL-THz facility and attracts significant attention, as machine performance is very sensitive to initial conditions. A novel thermionic gun with an external cathode (EC) and two independently tunable cavities (ITCs) has been found to be a promising alternative to conventional electron sources due to its remarkable characteristics, and correspondingly an FEL injector can achieve a balance between a compact layout and high brightness benefitting from the velocity bunching properties and RF focusing effects in the EC-ITC gun. Nevertheless, the EC-ITC gun has not been extensively examined as part of the FEL injector in the past years. In this regard, to fill this gap, a development focusing on the experimental setup of an FEL injector based on an EC-ITC gun is described in detail. Before assembly, dynamic beam simulations were performed to investigate the optimal mounting position for the Linac associated with the focusing coils, and a suitable radio-frequency (RF) system was established based on a power coupling design and allocation. The testing bench proved to be fully functional through basic experiments using typical diagnostic approaches for estimating primary parameters. Associated with dynamic beam calculations, a performance evaluation for an EC-ITC gun was established while providing indirect testing results for an FEL injector.

  6. A class of monolayer metal halogenides MX{sub 2}: Electronic structures and band alignments

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Feng; Wang, Weichao; Luo, Xiaoguang; Cheng, Yahui; Dong, Hong; Liu, Hui; Wang, Wei-Hua, E-mail: whwangnk@nankai.edu.cn [Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071 (China); Xie, Xinjian [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2016-03-28

    With systematic first principles calculations, a class of monolayer metal halogenides MX{sub 2} (M = Mg, Ca, Zn, Cd, Ge, Pb; M = Cl, Br, I) has been proposed. Our study indicates that these monolayer materials are semiconductors with the band gaps ranging from 2.03 eV of ZnI{sub 2} to 6.08 eV of MgCl{sub 2}. Overall, the band gap increases with the increase of the electronegativity of the X atom or the atomic number of the metal M. Meanwhile, the band gaps of monolayer MgX{sub 2} (X = Cl, Br) are direct while those of other monolayers are indirect. Based on the band edge curvatures, the derived electron (m{sub e}) and hole (m{sub h}) effective masses of MX{sub 2} monolayers are close to their corresponding bulk values except that the m{sub e} of CdI{sub 2} is three times larger and the m{sub h} for PbI{sub 2} is twice larger. Finally, the band alignments of all the studied MX{sub 2} monolayers are provided using the vacuum level as energy reference. These theoretical results may not only introduce the monolayer metal halogenides family MX{sub 2} into the emerging two-dimensional materials, but also provide insights into the applications of MX{sub 2} in future electronic, visible and ultraviolet optoelectronic devices.

  7. Broadband S-band class E HPA

    NARCIS (Netherlands)

    Wanum, M.; van Dijk, R.; de Hek, A.P.; van Vliet, Frank Edward

    2009-01-01

    A broadband class E High Power Amplifier (HPA) is presented. This HPA is designed to operate at S-band (2.75 to 3.75 GHz). A power added efficiency of 50% is obtained for the two stage amplifier with an output power of 35.5 dBm on a chip area of 5.25 times 2.8 mm2.

  8. Inter-spin distance determination using L-band (1-2 GHz) non-adiabatic rapid sweep electron paramagnetic resonance (NARS EPR)

    Science.gov (United States)

    Kittell, Aaron W.; Hustedt, Eric J.; Hyde, James S.

    2014-01-01

    Site-directed spin-labeling electron paramagnetic resonance (SDSL EPR) provides insight into the local structure and motion of a spin probe strategically attached to a molecule. When a second spin is introduced to the system, macromolecular information can be obtained through measurement of inter-spin distances either by continuous wave (CW) or pulsed electron double resonance (ELDOR) techniques. If both methodologies are considered, inter-spin distances of 8 to 80 Å can be experimentally determined. However, there exists a region at the upper limit of the conventional X-band (9.5 GHz) CW technique and the lower limit of the four-pulse double electron-electron resonance (DEER) experiment where neither method is particularly reliable. The work presented here utilizes L-band (1.9 GHz) in combination with non-adiabatic rapid sweep (NARS) EPR to address this opportunity by increasing the upper limit of the CW technique. Because L-band linewidths are three to seven times narrower than those at X-band, dipolar broadenings that are small relative to the X-band inhomogeneous linewidth become observable, but the signal loss due to the frequency dependence of the Boltzmann factor, has made L-band especially challenging. NARS has been shown to increase sensitivity by a factor of five, and overcomes much of this loss, making L-band distance determination more feasible [1]. Two different systems are presented and distances of 18–30 Å have been experimentally determined at physiologically relevant temperatures. Measurements are in excellent agreement with a helical model and values determined by DEER. PMID:22750251

  9. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhi-Gang [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou (China); Heinke, Lars, E-mail: Lars.Heinke@KIT.edu; Wöll, Christof [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin [Institute of Nanotechnology (INT), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Gordan, Ovidiu D.; Zahn, Dietrich R. T. [Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz (Germany)

    2015-11-02

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.

  10. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    Science.gov (United States)

    Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

    2015-11-01

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly "simple" MOF, the excitation spectra cannot be explained by a superposition of "intra-unit" excitations within the individual building blocks. Instead, "inter-unit" excitations also have to be considered.

  11. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    International Nuclear Information System (INIS)

    Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

    2015-01-01

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered

  12. Band structure of germanium carbides for direct bandgap silicon photonics

    Energy Technology Data Exchange (ETDEWEB)

    Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2016-08-07

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  13. Valence band electronic structure and band alignment of LaAlO{sub 3}/SrTiO{sub 3}(111) heterointerfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gabel, J.; Scheiderer, P.; Zapf, M.; Schuetz, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, C.; Lee, T.L. [Diamond Light Source, Didcot (United Kingdom)

    2015-07-01

    As in the famous LaAlO{sub 3}(LAO)/SrTiO{sub 3}(STO) (001) a two-dimensional electron system (2DES) also forms at the interface between LAO and STO in (111) orientation. A distinct feature of the (111) interface is its peculiar real space topology. Each bilayer represents a buckled honeycomb lattice similar to graphene which is known theoretically to host various topologically non-trivial states. Bilayer STO in proximity to the interface can be regarded as a three-orbital generalization of graphene with enhanced electron correlations making it a promising candidate for the realization of strongly correlated topological phases. We have investigated the electronic structure of the LAO/STO (111) heterostructure in relation to the oxygen vacancy concentration which we can control by synchrotron light irradiation and oxygen dosing. With hard X-ray photoemission we study the core levels, whereas resonant soft X-ray photoemission is used to probe the interfacial valence band (VB) states. Two VB features are found: a peak at the Fermi level associated with the 2DES and in-gap states at higher binding energies attributed to oxygen vacancies. By varying the oxygen vacancy contribution we can tune the emergence of the VB states and engineer the interfacial band alignment.

  14. First-principles study of the electronic structure of CdS/ZnSe coupled quantum dots

    NARCIS (Netherlands)

    Ganguli, N.; Acharya, S.; Dasgupta, I.

    2014-01-01

    We have studied the electronic structure of CdS/ZnSe coupled quantum dots, a novel heterostructure at the nanoscale. Our calculations reveal CdS/ZnSe coupled quantum dots are type II in nature where the anion p states play an important role in deciding the band offset for the highest occupied

  15. Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

    KAUST Repository

    Chiu, Ming-Hui

    2016-09-20

    It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson\\'s model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson\\'s model is verified for the 2D heterojunction systems and the success of Anderson\\'s model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson\\'s rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    International Nuclear Information System (INIS)

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-01-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society

  17. Finite-size effects on band structure of CdS nanocrystallites studied by positron annihilation

    International Nuclear Information System (INIS)

    Kar, Soumitra; Biswas, Subhajit; Chaudhuri, Subhadra; Nambissan, P.M.G.

    2005-01-01

    Quantum confinement effects in nanocrystalline CdS were studied using positrons as spectroscopic probes to explore the defect characteristics. The lifetime of positrons annihilating at the vacancy clusters on nanocrystalline grain surfaces increased remarkably consequent to the onset of such finite-size effects. The Doppler broadened line shape was also found to reflect rather sensitively such distinct changes in the electron momentum redistribution scanned by the positrons, owing to the widening of the band gap. The nanocrystalline sizes of the samples used were confirmed from x-ray diffraction and high resolution transmission electron microscopy and the optical absorption results supported the quantum size effects. Positron annihilation results indicated distinct qualitative changes between CdS nanorods and the bulk sample, notwithstanding the identical x-ray diffraction pattern and close resemblance of the optical absorption spectra. The results are promising in the event of positron annihilation being proved to be a very successful tool for the study of such finite-size effects in semiconductor nanoparticles

  18. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

    International Nuclear Information System (INIS)

    Jałochowski, M; Kwapiński, T; Łukasik, P; Nita, P; Kopciuszyński, M

    2016-01-01

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed. (paper)

  19. The structural, electronic and magnetic properties of CoS2 under pressure

    Science.gov (United States)

    Feng, Zhong-Ying; Yang, Yan; Zhang, Jian-Min

    2018-05-01

    The structural, electronic and magnetic properties of CoS2 under pressure have been investigated by the first-principles calculations. The lattice constant and volume decrease with increasing pressure. The CoS2 is stable and behaves a brittle characteristic under the pressures of 0-5 GPa. The CoS2 presents metallic characteristic under the pressures of 1-5 GPa although it is nearly half-metal (HM) under the pressure of 0 GPa. The lowest conduction bands for spin-up and spin-down channels shift towards higher and lower energy region, respectively, with the pressure increasing from 0 to 5 GPa. In spin-up channel the conduction band minimum (CBM) is mainly contributed by Co-3d(eg) orbitals at R point but the valence band maximum (VBM) is contributed by Co-3d(t2g) orbitals near M point. While in spin-down channel the CBM is contributed by S-3p orbitals at Γ point but the VBM is contributed by Co-3d(t2g) orbitals near X point. The CoS2 is still suitable to be used in the supercapacitor under the environmental pressures of 0-5 GPa due to the high conductivity.

  20. Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk crystals

    Science.gov (United States)

    Gehlmann, Mathias; Aguilera, Irene; Bihlmayer, Gustav; Młyńczak, Ewa; Eschbach, Markus; Döring, Sven; Gospodarič, Pika; Cramm, Stefan; Kardynał, Beata; Plucinski, Lukasz; Blügel, Stefan; Schneider, Claus M.

    2016-06-01

    Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS2 bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES), we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method, we find that these valence band states at the point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS2, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS2 can be accessed without thinning it down to the monolayer limit.

  1. The effects of buoyancy on shear-induced melt bands in a compacting porous medium

    Science.gov (United States)

    Butler, S. L.

    2009-03-01

    It has recently been shown [Holtzman, B., Groebner, N., Zimmerman, M., Ginsberg, S., Kohlstedt, D., 2003. Stress-driven melt segregation in partially molten rocks. Geochem. Geophys. Geosyst. 4, Art. No. 8607; Holtzman, B.K., Kohlstedt, D.L., 2007. Stress-driven melt segregation and strain partitioning in partially molten rocks: effects of stress and strain. J. Petrol. 48, 2379-2406] that when partially molten rock is subjected to simple shear, bands of high and low porosity are formed at a particular angle to the direction of instantaneous maximum extension. These have been modeled numerically and it has been speculated that high porosity bands may form an interconnected network with a bulk, effective permeability that is enhanced in a direction parallel to the bands. As a result, the bands may act to focus mantle melt towards the axis of mid-ocean ridges [Katz, R.F., Spiegelman, M., Holtzman, B., 2006. The dynamics of melt and shear localization in partially molten aggregates. Nature 442, 676-679]. In this contribution, we examine the combined effects of buoyancy and matrix shear on a deforming porous layer. The linear theory of Spiegelman [Spiegelman, M., 1993. Flow in deformable porous media. Part 1. Simple analysis. J. Fluid Mech. 247, 17-38; Spiegelman, M., 2003. Linear analysis of melt band formation by simple shear. Geochem. Geophys. Geosyst. 4, doi:10.1029/2002GC000499, Article 8615] and Katz et al. [Katz, R.F., Spiegelman, M., Holtzman, B., 2006. The dynamics of melt and shear localization in partially molten aggregates. Nature 442, 676-679] is generalized to include both the effects of buoyancy and matrix shear on a deformable porous layer with strain-rate dependent rheology. The predictions of linear theory are compared with the early time evolution of our 2D numerical model and they are found to be in excellent agreement. For conditions similar to the upper mantle, buoyancy forces can be similar to or much greater than matrix shear-induced forces. The

  2. Testing and Implementation Progress on the Advanced Photon Source (APS) Linear Accelerator (Linac) High-Power S-band Switching System

    OpenAIRE

    Grelick, A. E.; Arnold, N.; Berg, S.; Dohan, D.; Goeppner, G.; Kang, Y. W.; Nassiri, A.; Pasky, S.; Pile, G.; Smith, T.; Stein, S. J.

    2000-01-01

    An S-band linear accelerator is the source of particles and the front end of the Advanced Photon Source injector. In addition, it supports a low-energy undulator test line (LEUTL) and drives a free-electron laser (FEL). A waveguide-switching and distribution system is now under construction. The system configuration was revised to be consistent with the recent change to electron-only operation. There are now six modulator-klystron subsystems, two of which are being configured to act as hot sp...

  3. Dual and tri-band bandpass filters based on novel Π-shaped resonator

    Science.gov (United States)

    Xiao, Jian-Kang; Zhu, Wen-Jun; Zhao, Wei

    2014-05-01

    A novel Π-shaped resonator is proposed, and compact dual-band and tri-band bandpass filters that meet IEEE 802.11 application requirements by using the new resonator are designed. The dual-band bandpass filter centres at 2.45 and 5.6 GHz with a simulated passband insertion loss of no more than 0.8 dB, and the tri-band bandpass filter which is got by two-path coupling achieves simulated passband insertion loss of no more than 1.1 dB. The new designs are demonstrated by experiment. The new filters have advantages of simple and compact structures, low passband insertion losses, good frequency selectivity and miniature circuit sizes. All these have prospect to be applied in future wireless communication systems.

  4. BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

    Directory of Open Access Journals (Sweden)

    Hee Jae Kang2

    2011-11-01

    Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.

  5. Theoretical study of electronic absorption spectroscopy of propadienylidene molecule vis-â-vis the observed diffuse interstellar bands

    International Nuclear Information System (INIS)

    Reddy, Samala Nagaprasad; Mahapatra, S.

    2012-01-01

    Highlights: ► Theoretical study of spectroscopy and dynamics of electronically excited l-C 3 H 2 . ► Construction of ab initio electronic potential energy and diabatic coupling surfaces. ► First principles study of nuclear dynamics on excited electronic states. ► Findings reveal l-C 3 H 2 is a potential molecular carrier of diffuse interstellar bands. ► Electronically excited l-C 3 H 2 decays by ultrafast nonradiative internal conversion. -- Abstract: Observation of broad and diffuse interstellar bands (DIBs) at 4881 Å and 5440 Å assigned to the optical absorption spectrum of Y-shaped propadienylidene (H 2 C=C=C:) molecule is theoretically examined in this paper. This molecule apparently absorbs in the same wavelength region as the observed DIBs and was suggested to be a potential carrier of these DIBs. This assignment mostly relied on the experimental data from radioastronomy and laboratory measurements. Motivated by these available experimental data we attempt here a theoretical study and investigate the detailed electronic structure and nuclear dynamics underlying the electronic absorption bands of propadienylidene molecule. Our results show that this molecule indeed absorbs in the wavelength region of the recorded DIBs. Strong nonadiabatic coupling between its energetically low-lying electronic states plays major role, initiates ultrafast internal conversion and contributes to the spectral broadening. Theoretical findings are finally compared with the available experimental and theoretical data and discussed in connection with the recorded DIBs.

  6. Optimization of a triode-type cusp electron gun for a W-band gyro-TWA

    Science.gov (United States)

    Zhang, Liang; Donaldson, Craig R.; He, Wenlong

    2018-04-01

    A triode-type cusp electron gun was optimized through numerical simulations for a W-band gyrotron traveling wave amplifier. An additional electrode in front of the cathode could switch the electron beam on and off instantly when its electric potential is properly biased. An optimal electron beam of current 1.7 A and a velocity ratio (alpha) of 1.12 with an alpha spread of ˜10.7% was achieved when the triode gun was operated at 40 kV.

  7. A Compact Band-Pass Filter with High Selectivity and Second Harmonic Suppression.

    Science.gov (United States)

    Hadarig, Ramona Cosmina; de Cos Gomez, Maria Elena; Las-Heras, Fernando

    2013-12-03

    The design of a novel band-pass filter with narrow-band features based on an electromagnetic resonator at 6.4 GHz is presented. A prototype is manufactured and characterized in terms of transmission and reflection coefficient. The selective passband and suppression of the second harmonic make the filter suitable to be used in a C band frequency range for radar systems and satellite/terrestrial applications. To avoid substantial interference for this kind of applications, passive components with narrow band features and small dimensions are required. Between 3.6 GHz and 4.2 GHz the band-pass filter with harmonic suppression should have an attenuation of at least 35 dB, whereas for a passband, less than 10% is sufficient.

  8. Size-dependent and intra-band photoluminescence of NiS{sub 2} nano-alloys synthesized by microwave assisted hydrothermal technique

    Energy Technology Data Exchange (ETDEWEB)

    Linganiso, Ella Cebisa [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mhlanga, Sabelo Dalton; Coville, Neil John [Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mwakikunga, Bonex Wakufwa, E-mail: bmwakikunga@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Department of Physics and Biochemical Sciences, University of Malawi, The Polytechnic, Private Bag 303, Chichiri, Blantyre 3 (Malawi)

    2013-03-05

    Graphical abstract: Unexpected ultra-violet (UV) emission as well as near infra-red (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions due to the smaller crystallite size of the capped NiS{sub 2} nanostructures was also observed. Band energy and local density of states calculation for NiS{sub 2} were used to support the experimentally observed luminescence results. The luminescence features at wavelengths of 400 nm (3.10 eV), 428 nm (2.90 eV), 447 nm (2.77 eV) and 464 nm (2.67) can be attributed to some of those electrons de-exciting from S (3p) levels down to the Ni (3d) (blue to UV emission) whereas those features at wavelengths of 710 nm (1.75 eV), 751 nm (1.65 eV), 754 nm (1.64 eV) [NiS{sub 2}/HDA-capped NiS{sub 2}] and 784 nm (1.58 eV) respectively seem to result from de-excitations between either Ni(3d) or S (3s, 3p) levels and Ni–S hybridization levels (red to near IR emission). Highlights: ► Rapid solid state alloying of Ni and S from their liquid state precursor by microwaves. ► New photoluminescence data of NiS{sub 2} system. ► Unexpected luminescence in the UV–Visible and near IR ranges for such a metal matrix alloy. ► Explanation of NiS{sub 2} photoluminescence from ab initio calculations by electronic energy band structure and density of states. -- Abstract: Synthesis of nickel disulfide (NiS{sub 2}) nano-alloys capped and uncapped with hexadecylamine (HDA) was carried out. A cubic phase NiS{sub 2} formation was confirmed by X-ray diffraction (XRD) analysis. An average crystallite size of 35 nm was obtained for the uncapped nanostructures and 9 nm was obtained for the capped nanostructures estimated using the Scherrer equation. Unexpected ultra-violet (UV) emission as well as near infrared (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material

  9. Structural, optical, and photoluminescence characterization of electron beam evaporated ZnS/CdSe nanoparticles thin films

    Science.gov (United States)

    Mohamed, S. H.; Ali, H. M.

    2011-01-01

    Structural, optical, and photoluminescence investigations of ZnS capped with CdSe films prepared by electron beam evaporation are presented. X-ray diffraction analysis revealed that the ZnS/CdSe nanoparticles films contain cubic cadmium selenide and hexagonal zinc sulfide crystals and the ZnS grain sizes increased with increasing ZnS thickness. The refractive index was evaluated in terms of envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index values were found to increase with increasing ZnS thickness. However, the optical band gap and the extinction coefficient were decreased with increasing ZnS thickness. Photoluminescence (PL) investigations revealed the presence of two broad emission bands. The ZnS thickness significantly influenced the PL intensities.

  10. CPM Signals for Satellite Navigation in the S and C Bands.

    Science.gov (United States)

    Xue, Rui; Sun, Yanbo; Zhao, Danfeng

    2015-06-05

    Frequency allocations in the L band suitable for global navigation satellite system (GNSS) services are getting crowded and system providers face an ever tougher job when they try to bring in new signals and services while maintaining radio frequency compatibility. With the successive opening of the S and C bands to GNSS service, the multi-band combined navigation is predicted to become a key technology for future high-precision positioning navigation systems, and a single modulation scheme satisfying the requirements in each band is a promising solution for reducing user terminal complexity. A universal modulation scheme based on the continuous phase modulation (CPM) family suitable for the above bands' demands is proposed. Moreover, this paper has put forward two specific CPM signals for the S and C bands, respectively. Then the proposed modulation schemes, together with existing candidates, are comprehensively evaluated. Simulation results show that the proposed CPM signals can not only satisfy the constraint condition of compatibility in different bands well and reduce user terminal complexity, but also provide superior performance in terms of tracking accuracy, multi-path mitigation and anti-jamming compared to other candidate modulation schemes.

  11. Optoelectronic properties of XIn2S4 (X = Cd, Mg) thiospinels through highly accurate all-electron FP-LAPW method coupled with modified approximations

    International Nuclear Information System (INIS)

    Yousaf, Masood; Dalhatu, S.A.; Murtaza, G.; Khenata, R.; Sajjad, M.; Musa, A.; Rahnamaye Aliabad, H.A.; Saeed, M.A.

    2015-01-01

    Highlights: • Highly accurate all-electron FP-LAPW+lo method is used. • New physical parameters are reported, important for the fabrication of optoelectronic devices. • A comparative study that involves FP-LAPW+lo method and modified approximations. • Computed band gap values have good agreement with the experimental values. • Optoelectronic results of fundamental importance can be utilized for the fabrication of devices. - Abstract: We report the structural, electronic and optical properties of the thiospinels XIn 2 S 4 (X = Cd, Mg), using highly accurate all-electron full potential linearized augmented plane wave plus local orbital method. In order to calculate the exchange and correlation energies, the method is coupled with modified techniques such as GGA+U and mBJ-GGA, which yield improved results as compared to the previous studies. GGA+SOC approximation is also used for the first time on these compounds to examine the spin orbit coupling effect on the band structure. From the analysis of the structural parameters, robust character is predicted for both materials. Energy band structures profiles are fairly the same for GGA, GGA+SOC, GGA+U and mBJ-GGA, confirming the indirect and direct band gap nature of CdIn 2 S 4 and MgIn 2 S 4 materials, respectively. We report the trend of band gap results as: (mBJ-GGA) > (GGA+U) > (GGA) > (GGA+SOC). Localized regions appearing in the valence bands for CdIn 2 S 4 tend to split up nearly by ≈1 eV in the case of GGA+SOC. Many new physical parameters are reported that can be important for the fabrication of optoelectronic devices. Optical spectra namely, dielectric function (DF), refractive index n(ω), extinction coefficient k(ω), reflectivity R(ω), optical conductivity σ(ω), absorption coefficient α(ω) and electron loss function are discussed. Optical’s absorption edge is noted to be 1.401 and 1.782 for CdIn 2 S 4 and MgIn 2 S 4 , respectively. The prominent peaks in the electron energy spectrum

  12. Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

    Science.gov (United States)

    Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

    2015-09-01

    Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

  13. The Entropy of Co-Compact Open Covers

    Directory of Open Access Journals (Sweden)

    Steven Bourquin

    2013-06-01

    Full Text Available Co-compact entropy is introduced as an invariant of topological conjugation for perfect mappings defined on any Hausdorff space (compactness and metrizability are not necessarily required. This is achieved through the consideration of co-compact covers of the space. The advantages of co-compact entropy include: (1 it does not require the space to be compact and, thus, generalizes Adler, Konheim and McAndrew’s topological entropy of continuous mappings on compact dynamical systems; and (2 it is an invariant of topological conjugation, compared to Bowen’s entropy, which is metric-dependent. Other properties of co-compact entropy are investigated, e.g., the co-compact entropy of a subsystem does not exceed that of the whole system. For the linear system, (R; f, defined by f(x = 2x, the co-compact entropy is zero, while Bowen’s entropy for this system is at least log 2. More generally, it is found that co-compact entropy is a lower bound of Bowen’s entropies, and the proof of this result also generates the Lebesgue Covering Theorem to co-compact open covers of non-compact metric spaces.

  14. POX 186: the ultracompact blue compact dwarf galaxy reveals its nature

    Science.gov (United States)

    Doublier, V.; Kunth, D.; Courbin, F.; Magain, P.

    2000-01-01

    High resolution, ground based R and I band observations of the ultra compact dwarf galaxy POX 186 are presented. The data, obtained with the ESO New Technology Telescope (NTT), are analyzed using a new deconvolution algorithm which allows one to resolve the innermost regions of this stellar-like object into three Super-Star Clusters (SSC). Upper limits to both masses (M ~ 105 Msun) and physical sizes (<=60pc) of the SSCs are set. In addition, and maybe most importantly, extended light emission underlying the compact star-forming region is clearly detected in both bands. The R-I color rules out nebular Hα contamination and is consistent with an old stellar population. This casts doubt on the hypothesis that Blue Compact Dwarf Galaxies (BCDG) are young galaxies. based on observations carried out at NTT in La Silla, operated by the European Southern Observatory, during Director's Discretionary Time.

  15. Dynamical electron-phonon coupling, G W self-consistency, and vertex effect on the electronic band gap of ice and liquid water

    Science.gov (United States)

    Ziaei, Vafa; Bredow, Thomas

    2017-06-01

    We study the impact of dynamical electron-phonon (el-ph) effects on the electronic band gap of ice and liquid water by accounting for frequency-dependent Fan contributions in the el-ph mediated self-energy within the many-body perturbation theory (MBPT). We find that the dynamical el-ph coupling effects greatly reduce the static el-ph band-gap correction of the hydrogen-rich molecular ice crystal from-2.46 to -0.23 eV in great contrast to the result of Monserrat et al. [Phys. Rev. B 92, 140302 (2015), 10.1103/PhysRevB.92.140302]. This is of particular importance as otherwise the static el-ph gap correction would considerably reduce the electronic band gap, leading to considerable underestimation of the intense peaks of optical absorption spectra of ice which would be in great disagreement to experimental references. By contrast, the static el-ph gap correction of liquid water is very moderate (-0.32 eV), and inclusion of dynamical effects slightly reduces the gap correction to -0.19 eV. Further, we determine the diverse sensitivity of ice and liquid water to the G W self-consistency and show that the energy-only self-consistent approach (GnWn ) exhibits large implicit vertex character in comparison to the quasiparticle self-consistent approach, for which an explicit calculation of vertex corrections is necessary for good agreement with experiment.

  16. Valence one-electron and shake-up ionization bands of fluorene, carbazole and dibenzofuran

    International Nuclear Information System (INIS)

    Reza Shojaei, S.H.; Morini, Filippo; Deleuze, Michael S.

    2013-01-01

    Highlights: • The photoelectron spectra of the title compounds are assigned in details. • Shake-up lines are found to severely contaminate both π- and σ-ionization bands. • σ-ionization onsets are subject to severe vibronic coupling complications. • We compare the results of OVGF, ADC(3) and TDDFT calculations. - Abstract: A comprehensive study of the He (I) ultra-violet photoelectron spectra of fluorene, carbazole and dibenzofuran is presented with the aid of one-particle Green’s Function calculations employing the outer-valence Green’s Function (OVGF) approach and the third-order algebraic diagrammatic construction [ADC(3)] scheme, along with Dunning’s correlation consistent basis sets of double and triple zeta quality (cc-pVDZ, cc-pVTZ). Extrapolations of the ADC(3) results for the outermost one-electron π-ionization energies to the cc-pVTZ basis set enable theoretical insights into He (I) measurements within ∼0.15 eV accuracy, up to the σ-ionization onset. The lower ionization energy of carbazole is the combined result of mesomeric and electronic relaxation effects. OVGF/cc-pVDZ or OVGF/cc-pVTZ pole strengths smaller than 0.85 systematically corroborate a breakdown of the orbital picture of ionization at the ADC(3) level. Comparison is made with calculations of the lowest doublet–doublet excitation energies of the radical cation of fluorene, by means of time-dependent density functional theory (TDDFT)

  17. The influence of band Jahn-Teller effect and magnetic order on the magneto-resistance in manganite systems

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G.C., E-mail: gcr@iopb.res.i [Condensed Matter Physics Group, Department of Applied Physics and Ballistics, F.M. University, Balasore, Orissa 756019 (India); Parhi, Nilima [Department of Physics, M.P.C. (Autonomous) College, Baripada, Orissa 757001 (India); Behera, S.N. [Institute of Material Science, Bhubaneswar 751004 (India)

    2009-08-01

    A model calculation is presented in order to study the magneto-resistivity through the interplay between magnetic and structural transitions for the manganite systems. The model consists of an orbitally doubly degenerate conduction band and a periodic array of local moments of the t{sub 2g} electrons. The band electrons interact with the local t{sub 2g} electrons via the s-f hybridization. The phonons interact with the band electrons through static and dynamic band Jahn-Teller (J-T) interaction. The model Hamiltonian including the above terms is solved for the single particle Green's functions and the imaginary part of the self-energy gives the electron relaxation time. Thus the magneto-resistivity (MR) is calculated from the Drude formula. The MR effect is explained near the magnetic and structural transition temperatures.

  18. Electronic band structure and optical properties of antimony selenide under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Abhijit, B.K.; Jayaraman, Aditya; Molli, Muralikrishna, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam, 515 134 (India)

    2016-05-23

    In this work we present the optical properties of Antimony Selenide (Sb{sub 2}Se{sub 3}) under ambient conditions and under pressure of 9.2 GPa obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Optical properties like refractive index, absorption coefficient and optical conductivity are calculated using the WIEN2k code.

  19. Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

    Science.gov (United States)

    Monavarian, Morteza; Hafiz, Shopan; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

    2016-02-01

    Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.

  20. 10Gb/s Ultra-Wideband Wireless Transmission Based on Multi-Band Carrierless Amplitude Phase Modulation

    DEFF Research Database (Denmark)

    Puerta Ramírez, Rafael; Rommel, Simon; Vegas Olmos, Juan José

    2016-01-01

    In this paper, for the first time, a record UWB transmission of 10Gb/s is experimentally demonstrated employing a multi-band approach of carrierless amplitude phase modulation (MultiCAP). The proposed solution complies with the restrictions on the effective radiated power established by both...... the United States Federal Communications Commission and the European Electronic Communications Committee, achieving a BER below the limit for a 7% overhead FEC of 3.8 · 10−3 up to respective wireless distances of 3.5m and 2m....

  1. Compact electromagnetic bandgap structures for notch band in ultra-wideband applications.

    Science.gov (United States)

    Rotaru, Mihai; Sykulski, Jan

    2010-01-01

    This paper introduces a novel approach to create notch band filters in the front-end of ultra-wideband (UWB) communication systems based on electromagnetic bandgap (EBG) structures. The concept presented here can be implemented in any structure that has a microstrip in its configuration. The EBG structure is first analyzed using a full wave electromagnetic solver and then optimized to work at WLAN band (5.15-5.825 GHz). Two UWB passband filters are used to demonstrate the applicability and effectiveness of the novel EBG notch band feature. Simulation results are provided for two cases studied.

  2. The role of the isolated 6s states in BiVO{sub 4} on the electronic and atomic structures

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Jie; Wang, Lin-Wang [Joint Center for Artificial Photosynthesis and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2014-10-27

    BiVO{sub 4} is one of the most promising photoanodes for water-splitting applications. Similar to many d{sup 10} materials, where the full-shell d electrons are not directly involved in the bonding, the Bi 6s electrons form isolated low-energy bands in BiVO{sub 4}. By systematically altering the energy of the Bi 6s states, we find direct evidences that the isolated s states, through the s-p coupling, affect the BiVO{sub 4} properties, including valence band maximum position, charge density, and atomic structural distortion. We find that many good properties of BiVO{sub 4} for water splitting are related to the s-p coupling due to the existence of Bi 6s states. Based on this understanding, we propose that alloying Bi with Sb can enhance these properties, and hence improve the water-splitting efficiency.

  3. Complex band structure and electronic transmission eigenchannels

    DEFF Research Database (Denmark)

    Jensen, Anders; Strange, Mikkel; Smidstrup, Soren

    2017-01-01

    and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two...

  4. Electronic structures of ReS2, ReSe2 and TcS2 in the real and the hypothetical undistorted structures

    NARCIS (Netherlands)

    Fang, CM; Wiegers, GA; Haas, C; deGroot, RA

    1997-01-01

    The transition-metal dichalcogenides ReX2 (X = Sor Se) and TcS2 with a d(3) electron configuration have distorted; CdCl2 and Cd(OH)(2) structures, respectively, with the Re(Tc) atoms in each layer forming parallelogram-shaped connected clusters (diamond chain). Ab-initio band-structure calculations

  5. Ab initio calculations of the electron spectrum and density of states of TlFeS{sub 2} and TlFeSe{sub 2} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ismayilova, N. A., E-mail: ismayilova-narmin-84@mail.ru; Orudjev, H. S.; Jabarov, S. H. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

    2017-04-15

    The results of ab initio calculations of the electron spectrum of TlFeS{sub 2} and TlFeSe{sub 2} crystals in the antiferromagnetic phase are reported. Calculations are carried out in the context of the density functional theory. The origin of the bands of s, p, and d electron states of Tl, Fe, S, and Se atoms is studied. It is established that, in the antiferromagnetic phase, the crystals possess semiconductor properties. The band gaps are found to be 0.05 and 0.34 eV for TlFeS{sub 2} and TlFeSe{sub 2} crystals, respectively.

  6. A comparative cepstral based analysis of simulated and measured S-band and X-band radar Doppler spectra of human motion

    CSIR Research Space (South Africa)

    Van Eeden, WD

    2015-10-01

    Full Text Available targets. It is also shown that, whereas the motion of most body parts of a human target can be observed in the X-band data, only the main torso sway can be observed at S-band. This implies that X-band data is well suited to cepstrum based human motion...

  7. Single-layer MoS2 electronics.

    Science.gov (United States)

    Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

    2015-01-20

    allowed rapid progress in this area and was followed by demonstrations of basic digital circuits and transistors operating in the technologically relevant gigahertz range of frequencies, showing that the mobility of MoS2 and TMD materials is sufficiently high to allow device operation at such high frequencies. Monolayer MoS2 and other TMDs are also direct band gap semiconductors making them interesting for realizing optoelectronic devices. These range from simple phototransistors showing high sensitivity and low noise, to light emitting diodes and solar cells. All the electronic and optoelectronic properties of MoS2 and TMDs are accompanied by interesting mechanical properties with monolayer MoS2 being as stiff as steel and 30× stronger. This makes it especially interesting in the context of flexible electronics where it could combine the high degree of mechanical flexibility commonly associated with organic semiconductors with high levels of electrical performance. All these results show that MoS2 and TMDs are promising materials for electronic and optoelectronic applications.

  8. A Compact Annular Ring Microstrip Antenna for WSN Applications

    Directory of Open Access Journals (Sweden)

    Daihua Wang

    2012-06-01

    Full Text Available A compact annular ring microstrip antenna was proposed for a wireless sensor network (WSN application in the 2.4 GHz band. In this paper the major considerations of the conformal antenna design were the compact size and the impact on antenna’s performance of a steel installation base. By using a chip resistor of large resistance (120 Ω the antenna size was reduced to 38% of that a conventional annular ring patch antenna. With the addition of the steel installation base the resonant frequency of the antenna increases about 4.2% and the bandwidth reduces from 17.5% to 11.7% by adjusting the load resistance simultaneously. Several key parameters were discussed and optimized, and the antenna was fabricated and its performance measured. The antenna is well matched at 2.4 GHz with 34.2 dB return loss and –2.5 dBi peak gain. Meanwhile, it exhibits excellent radiation patterns with very low cross-polarization levels.

  9. Theoretical investigation of the structural, electronic, and thermodynamic properties of CdS1-xSex alloys

    Science.gov (United States)

    Long, Debing; Li, Mingkai; Meng, Dongxue; Ahuja, Rajeev; He, Yunbin

    2018-03-01

    In this work, the structural, electronic, and thermodynamic properties of wurtzite (WZ) and zincblende (ZB) CdS1-xSex alloys are investigated using the density functional theory (DFT) and the cluster expansion method. A special quasirandom structure containing 16 atoms is constructed to calculate the band structures of random alloys. The band gaps of CdS1-xSex alloys are direct and decrease as the Se content increases. The delta self-consistent-field method is applied to correct band gaps that are underestimated by DFT. The band offsets clearly reflect the variation in valence band maxima and conduction band minima, thus providing information useful to the design of relevant quantum well structures. The positive formation enthalpies of both phases imply that CdS1-xSex is an immiscible system and tends to phase separate. The influence of lattice vibrations on the phase diagram is investigated by calculating the phonon density of states. Lattice vibration effects can reduce the critical temperature Tc and increase alloy solid solubilities. This influence is especially significant in the ZB structure. When only chemical interactions are present, the Tc values for WZ- and ZB-CdS1-xSex are 260 K and 249 K, respectively. The lattice vibration enthalpy and entropy lower the Tc to 255 K and 233 K, respectively.

  10. Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

    Science.gov (United States)

    Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

    2018-02-28

    In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

  11. Valence band electronic structure of Nb{sub 2}Pd{sub 1.2}Se{sub 5} and Nb{sub 2}Pd{sub 0.95}S{sub 5} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

    2017-03-15

    We present a comparative study of our valence band photoemission results on Nb{sub 2}Pd{sub 1.2}Se{sub 5} and Nb{sub 2}Pd{sub 0.95}S{sub 5} superconductors which are supported by our DFT based electronic structure calculations. We observe that the VB spectra of both the compounds are qualitatively similar, except for some slight differences in the binding energy positions of all the features. This could be due to the unequal electronegativities of Se and S atom. The calculated density of states (DOS) reveals that the VB features are mainly composed of Pd-Se/S hybridized states. The nature of DOS originating from the distinctly coordinated Pd atoms is different. Further, various Pd-4d and Nb-4d states crossing the Fermi level (E{sub f}) signifies the multiband character of these compounds. In addition, we find a temperature dependent pseudogap in Nb{sub 2}Pd{sub 0.95}S{sub 5} which is absent in Nb{sub 2}Pd{sub 1.2}Se{sub 5}.

  12. Band alignment at the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4}/CdS interface

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B [IBM TJ Watson Research Center, P.O. Box 218, Yorktown Hts., New York 10598 (United States)

    2011-06-20

    Energy band alignments between CdS and Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

  13. Mechanisms of fine extinction band development in vein quartz: new insights from correlative light and electron microscopy

    Science.gov (United States)

    Derez, Tine; Van Der Donck, Tom; Plümper, Oliver; Muchez, Philippe; Pennock, Gill; Drury, Martyn R.; Sintubin, Manuel

    2017-07-01

    Fine extinction bands (FEBs) (also known as deformation lamellae) visible with polarized light microscopy in quartz consist of a range of nanostructures, inferring different formation processes. Previous transmission electron microscopy studies have shown that most FEB nanostructures in naturally deformed quartz are elongated subgrains formed by recovery of dislocation slip bands. Here we show that three types of FEB nanostructure occur in naturally deformed vein quartz from the low-grade metamorphic High-Ardenne slate belt (Belgium). Prismatic oriented FEBs are defined by bands of dislocation walls. Dauphiné twin boundaries present along the FEB boundaries probably formed after FEB formation. In an example of two sub-rhombohedral oriented FEBs, developed as two sets in one grain, the finer FEB set consists of elongated subgrains, similar to FEBs described in previous transmission electron microscopy studies. The second wider FEB set consists of bands with different dislocation density and fluid-inclusion content. The wider FEB set is interpreted as bands with different plastic strain associated with the primary growth banding of the vein quartz grain. The nanometre-scale fluid inclusions are interpreted to have formed from structurally bounded hydroxyl groups that moreover facilitated formation of the elongate subgrains. Larger fluid inclusions aligned along FEBs are explained by fluid-inclusion redistribution along dislocation cores. The prismatic FEB nanostructure and the relation between FEBs and growth bands have not been recognized before, although related structures have been reported in experimentally deformed quartz.

  14. Understanding the mechanical and acoustical characteristics of sand aggregates compacting under triaxial conditions

    Science.gov (United States)

    Hangx, Suzanne; Brantut, Nicolas

    2016-04-01

    Mechanisms such as grain rearrangement, coupled with elastic deformation, grain breakage, grain rearrangement, grain rotation, and intergranular sliding, play a key role in determining porosity and permeability reduction during burial of clastic sediments. Similarly, in poorly consolidated, highly porous sands and sandstones, grain rotation, intergranular sliding, grain failure, and pore collapse often lead to significant reduction in porosity through the development of compaction bands, with the reduced porosity and permeability of such bands producing natural barriers to flow within reservoir rocks. Such time-independent compaction processes operating in highly porous water- and hydrocarbon-bearing clastic reservoirs can exert important controls on production-related reservoir deformation, subsidence, and induced seismicity. We performed triaxial compression experiments on sand aggregates consisting of well-rounded Ottawa sand (d = 300-400 μm; φ = 36.1-36.4%) at room temperature, to systematically investigate the effect of confining pressure (Pceff = 5-100 MPa), strain rate (10-6-10-4 s-1) and chemical environment (decane vs. water; Pf = 5 MPa) on compaction. For a limited number of experiments grain size distribution (d = 180-500 μm) and grain shape (subangular Beaujean sand; d = 180-300 μm) were varied to study their effect. Acoustic emission statistics and location, combined with microstructural and grain size analysis, were used to verify the operating microphysical compaction mechanisms. All tests showed significant pre-compaction during the initial hydrostatic (set-up) phase, with quasi-elastic loading behaviour accompanied by permanent deformation during the differential loading stage. This permanent volumetric strain involved elastic grain contact distortion, particle rearrangement, and grain failure. From the acoustic data and grain size analysis, it was evident that at low confining pressure grain rearrangement controlled compaction, with grain

  15. Electron exchange between tin impurity U{sup –} centers in PbS{sub z}Se{sub 1–z} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Marchenko, A. V. [Alexander Herzen State Pedagogical University of Russia (Russian Federation); Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Seregin, P. P., E-mail: ppseregin@mail.ru; Rasnjuk, A. N.; Kiselev, V. S. [Alexander Herzen State Pedagogical University of Russia (Russian Federation)

    2016-07-15

    Using emission {sup 119mm}Sn({sup 119m}Sn) and {sup 119}Sb({sup 119m}Sn) Mössbauer spectroscopy, it is shown that impurity tin atoms in PbS{sub z}Se{sub 1–z} alloys substitute lead atoms and are two-electron donors with negative correlation energy (U{sup –} centers). It is found that the energy levels related to impurity tin atoms are in the lower half of the band gap at z ≥ 0.5 against the background of allowed valence-band states at z ≤ 0.4. The electron exchange between neutral and doubly ionized tin U{sup –} centers in partially compensated Pb{sub 0.99}Sn{sub 0.005}Na{sub 0.005}S{sub z}Se{sub 1–z} alloys is studied. The activation energy of this process decreases from 0.111(5) eV for a composition with z = 1 to 0.049(5) eV for compositions with c ≤ 0. For all z, the exchange is implemented via the simultaneous transfer of two electrons using delocalized valence-band states.

  16. Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas

    DEFF Research Database (Denmark)

    Miwa, Jill; Hofmann, Philip; Simmons, Michelle Y.

    2013-01-01

    We directly measure the band structure of a buried two dimensional electron gas (2DEG) using angle resolved photoemission spectroscopy. The buried 2DEG forms 2 nm beneath the surface of p-type silicon, because of a dense delta-type layer of phosphorus n-type dopants which have been placed there...

  17. Summary and Analysis of the U.S. Government Bat Banding Program

    Science.gov (United States)

    Ellison, Laura E.

    2008-01-01

    This report summarizes the U.S. Government Bat Banding Program (BBP) from 1932 to 1972. More than 2 million bands were issued during the program, of which approximately 1.5 million bands were applied to 36 bat species by scientists in many locations in North America including the U.S., Canada, Mexico, and Central America. Throughout the BBP, banders noticed numerous and deleterious effects on bats, leading to a moratorium on bat banding by the U.S. Fish and Wildlife Service, and a resolution to cease banding by the American Society of Mammalogists in 1973. One of the main points of the memorandum written to justify the moratorium was to conduct a 'detailed evaluation of the files of the bat-banding program.' However, a critical and detailed evaluation of the BBP was never completed. In an effort to satisfy this need, I compiled a detailed history of the BBP by examining the files and conducting a literature review on bat banding activities during the program. I also provided a case study in managing data and applying current mark-recapture theory to estimate survival using the information from a series of bat bands issued to Clyde M. Senger during the BBP. The majority of bands applied by Senger were to Townsend's big-eared bat (Corynorhinus townsendii), a species of special concern for many states within its geographic range. I developed a database management system for the bat banding records and then analyzed and modeled survival of hibernating Townsend's big-eared bats at three main locations in Washington State using Cormack-Jolly-Seber (CJS) open models and the modeling capabilities of Program MARK. This analysis of a select dataset in the BBP files provided relatively precise estimates of survival for wintering Townsend's big-eared bats. However, this dataset is unique due to its well-maintained and complete state and because there were high recapture rates over the course of banding; it is doubtful that other unpublished datasets of the same quality exist

  18. Compact X-ray source based on Compton backscattering

    CERN Document Server

    Bulyak, E V; Zelinsky, A; Karnaukhov, I; Kononenko, S; Lapshin, V G; Mytsykov, A; Telegin, Yu P; Khodyachikh, A; Shcherbakov, A; Molodkin, V; Nemoshkalenko, V; Shpak, A

    2002-01-01

    The feasibility study of an intense X-ray source based on the interaction between the electron beam in a compact storage ring and the laser pulse accumulated in an optical resonator is carried out. We propose to reconstruct the 160 MeV electron storage ring N-100, which was shutdown several years ago. A new magnetic lattice will provide a transverse of electron beam size of approx 35 mu m at the point of electron beam-laser beam interaction. The proposed facility is to generate X-ray beams of intensity approx 2.6x10 sup 1 sup 4 s sup - sup 1 and spectral brightness approx 10 sup 1 sup 2 phot/0.1%bw/s/mm sup 2 /mrad sup 2 in the energy range from 10 keV up to 0.5 MeV. These X-ray beam parameters meet the requirements for most of technological and scientific applications. Besides, we plan to use the new facility for studying the laser cooling effect.

  19. Compact X-ray source based on Compton backscattering

    Energy Technology Data Exchange (ETDEWEB)

    Bulyak, E.; Gladkikh, P.; Zelinsky, A. E-mail: zelinsky@kipt.kharkov.ua; Karnaukhov, I.; Kononenko, S.; Lapshin, V.; Mytsykov, A.; Telegin, Yu.; Khodyachikh, A.; Shcherbakov, A.; Molodkin, V.; Nemoshkalenko, V.; Shpak, A

    2002-07-21

    The feasibility study of an intense X-ray source based on the interaction between the electron beam in a compact storage ring and the laser pulse accumulated in an optical resonator is carried out. We propose to reconstruct the 160 MeV electron storage ring N-100, which was shutdown several years ago. A new magnetic lattice will provide a transverse of electron beam size of {approx}35 {mu}m at the point of electron beam-laser beam interaction. The proposed facility is to generate X-ray beams of intensity {approx}2.6x10{sup 14} s{sup -1} and spectral brightness {approx}10{sup 12} phot/0.1%bw/s/mm{sup 2}/mrad{sup 2} in the energy range from 10 keV up to 0.5 MeV. These X-ray beam parameters meet the requirements for most of technological and scientific applications. Besides, we plan to use the new facility for studying the laser cooling effect.

  20. Special issue on compact x-ray sources

    Science.gov (United States)

    Hooker, Simon; Midorikawa, Katsumi; Rosenzweig, James

    2014-04-01

    Journal of Physics B: Atomic, Molecular and Optical Physics is delighted to announce a forthcoming special issue on compact x-ray sources, to appear in the winter of 2014, and invites you to submit a paper. The potential for high-brilliance x- and gamma-ray sources driven by advanced, compact accelerators has gained increasing attention in recent years. These novel sources—sometimes dubbed 'fifth generation sources'—will build on the revolutionary advance of the x-ray free-electron laser (FEL). New radiation sources of this type have widespread applications, including in ultra-fast imaging, diagnostic and therapeutic medicine, and studies of matter under extreme conditions. Rapid advances in compact accelerators and in FEL techniques make this an opportune moment to consider the opportunities which could be realized by bringing these two fields together. Further, the successful development of compact radiation sources driven by compact accelerators will be a significant milestone on the road to the development of high-gradient colliders able to operate at the frontiers of particle physics. Thus the time is right to publish a peer-reviewed collection of contributions concerning the state-of-the-art in: advanced and novel acceleration techniques; sophisticated physics at the frontier of FELs; and the underlying and enabling techniques of high brightness electron beam physics. Interdisciplinary research connecting two or more of these fields is also increasingly represented, as exemplified by entirely new concepts such as plasma based electron beam sources, and coherent imaging with fs-class electron beams. We hope that in producing this special edition of Journal of Physics B: Atomic, Molecular and Optical Physics (iopscience.iop.org/0953-4075/) we may help further a challenging mission and ongoing intellectual adventure: the harnessing of newly emergent, compact advanced accelerators to the creation of new, agile light sources with unprecedented capabilities

  1. Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

    International Nuclear Information System (INIS)

    Baillie, Devin; Aubin, J. St.; Fallone, B. G.; Steciw, S.

    2013-01-01

    Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d max is at 2.15 cm for a 10 × 10 cm 2 field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

  2. Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source.

    Science.gov (United States)

    Baillie, Devin; St Aubin, J; Fallone, B G; Steciw, S

    2013-04-01

    To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV∕m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show dmax is at 2.15 cm for a 10 × 10 cm(2) field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

  3. Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

    Energy Technology Data Exchange (ETDEWEB)

    Baillie, Devin [Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Aubin, J. St. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Fallone, B. G. [Department of Physics, University of Alberta, 11322-89 Avenue, Edmonton, Alberta T6G 2G7 (Canada); Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Steciw, S. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada)

    2013-04-15

    Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d{sub max} is at 2.15 cm for a 10 Multiplication-Sign 10 cm{sup 2} field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

  4. Solid state Ka-band pulse oscillator with frequency electronic switching

    Directory of Open Access Journals (Sweden)

    Dvornichenko V. P.

    2015-08-01

    Full Text Available Transmitting devices for small radars in the millimeter wavelength range with high resolution on range and noise immunity. The work presents the results of research and development of compact pulse oscillators with digital frequency switching from pulse to pulse. The oscillator consists of a frequency synthesizer and a synchronized amplifier on the IMPATT diode. Reference oscillator of synthesizer is synchronized by crystal oscillator with digital PLL system and contains a frequency multiplier and an amplifier operating in pulse mode. Small-sized frequency synthesizer of 8 mm wave lengths provides an output power of ~1.2 W per pulse with a frequency stability of no worse than 2•10–6. Radiation frequency is controlled by three-digit binary code in OOL levels. Synchronized amplifier made on IMPATT diodes provides microwave power up to 20 W in oscillator output with microwave pulse duration of 100—300 ns in an operating band. The oscillator can be used as a driving source for the synchronization of semiconductor and electro-vacuum devices of pulsed mode, and also as a transmitting device for small-sized radar of millimeter wave range.

  5. CIRiS: Compact Infrared Radiometer in Space

    Science.gov (United States)

    Osterman, D. P.; Collins, S.; Ferguson, J.; Good, W.; Kampe, T.; Rohrschneider, R.; Warden, R.

    2016-09-01

    The Compact Infrared Radiometer in Space (CIRiS) is a thermal infrared radiometric imaging instrument under development by Ball Aerospace for a Low Earth Orbit mission on a CubeSat spacecraft. Funded by the NASA Earth Science Technology Office's In-Space Validation of Earth Science Technology (InVEST) program, the mission objective is technology demonstration for improved on-orbit radiometric calibration. The CIRiS calibration approach uses a scene select mirror to direct three calibration views to the focal plane array and to transfer the resulting calibrated response to earth images. The views to deep space and two blackbody sources, including one at a selectable temperature, provide multiple options for calibration optimization. Two new technologies, carbon nanotube blackbody sources and microbolometer focal plane arrays with reduced pixel sizes, enable improved radiometric performance within the constrained 6U CubeSat volume. The CIRiS instrument's modular design facilitates subsystem modifications as required by future mission requirements. CubeSat constellations of CIRiS and derivative instruments offer an affordable approach to achieving revisit times as short as one day for diverse applications including water resource and drought management, cloud, aerosol, and dust studies, and land use and vegetation monitoring. Launch is planned for 2018.

  6. A compact dual band MIMO PIFA for 5G applications

    Science.gov (United States)

    Rachakonda, A.; Bang, P.; Mudiganti, J.

    2017-11-01

    5G applications support operations in 28, 37, 60 and 73GHz bands and is expected to support 1GHz bandwidth. In the present paper, planar inverted F antenna for 28GHz operation has been proposed for 5G applications for which a return loss of -17.46dB and a gain of 9.30dB have been observed. In addition, the design has been extended for dual band operation at 28 and 37GHz by implementing an L slot in the patch. An excellent return loss of -32.54dB and -18.57dB with a gain of 8.62dB has been observed. Moreover, a feasible bandwidth of 1.02GHz has been obtained in former design, while an enhanced bandwidth of 1.3GHz has been obtained at both bands in case of latter design. However, for better gain & data rate considerations, the previous design has been extended as a MIMO configuration with 2 antenna elements (2x1) and corresponding performance parameters have been evaluated.

  7. Anisotropic light emission of single CdSe/CdS tetrapods due to asymmetric electron localization

    Energy Technology Data Exchange (ETDEWEB)

    Limmer, Thomas; Mauser, Christian; Como, Enrico da; Rogach, Andrey; Feldmann, Jochen [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet Muenchen, Munich (Germany); Talapin, Dmitri V. [Department of Chemistry, University of Chicago, Chicago, IL (United States)

    2008-07-01

    We have recently reported on highly luminescent CdSe/CdS tetrapod heterostructures, where wurtzite CdS arms were grown on CdSe zinc-blend nuclei. Due to the peculiar energy band alignment the holes remain trapped in the CdSe core, whereas electrons in ideal tetrapods are expected to delocalize symmetrically into the four CdS arms. However, polarization dependent photoluminescence experiments on single tetrapods show asymmetric localization effects for electrons. Whereas in optical excitation nearly no polarization anisotropy is observed, high polarization degrees are present in the emission process. Calculations based on the effective mass approximation show that the electron wavefunction confinement is very sensitive to changes in the shape of the tetrapods. Breaking the symmetry by increasing the thickness of one arm gives rise to a strongly asymmetric localization of the electron and leads to high polarization degrees in emission. The related decrease in electron-hole wavefunction overlap results in a correlation between emission intensity and polarization anisotropy in agreement with our experimental findings.

  8. Electronic structure of Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} surface and CdS/Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} interface

    Energy Technology Data Exchange (ETDEWEB)

    Udaka, Yusuke; Takaki, Shin' ichi; Isowaki, Keisuke; Terada, Norio [Graduate School of Science and Engineering, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890-0065 (Japan); Nagai, Takehiko; Kim, Kang Min; Kim, Shinho; Tampo, Hitoshi; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568 (Japan); Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki [Solar Frontier K.K., 123-1 Shimo-Kawairi, Atsugi 243-0206 (Japan)

    2017-06-15

    Changes of the electronic structure of the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} [CZTSSe] films and the band alignment at the interfaces between CdS buffer and the CZTSSe in conjunction with the anion-mixing ratio x = 0-1 have been investigated using in situ X-ray, ultraviolet photoemission spectroscopy (XPS, UPS), and inverse photoemission spectroscopy (IPES). Changes of the UPS and IPES spectra in conjunction with x have revealed that the electronic structure of the CZTSSe surface is characterized with the preferential rise of conduction band minimum (CBM) in conjunction with the increase of x. As x increases, interface induced band bending decreases from 0.5 to 0.6 at the CdS/CZTSe (x = 0) interface to 0.1-0.2 at the CdS/CZTS (x = 1) one. And the downward shift of CBM due to the deposition of the CdS layer is enhanced as x increases. These changes result in the monotonous decrease of conduction band offset (CBO) in conjunction with the increase of x: CBO at the x = 0 and 1 interfaces are +0.5 and -0.14 to -0.15 eV, respectively. The values of CBO are consistent with the device properties; occasional emergence of double junction like current-voltage characteristics in the CdS/CZTSe-based cells, serious voltage-loss in the CdS/CZTS ones, and the highest performance achieved in the CdS/CZTSSe ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    International Nuclear Information System (INIS)

    Johansson, Leif I.; Xia, Chao; Virojanadara, Chariya

    2015-01-01

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10 14  cm −2 after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene

  10. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    Energy Technology Data Exchange (ETDEWEB)

    Johansson, Leif I., E-mail: lij@ifm.liu.se; Xia, Chao; Virojanadara, Chariya [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2015-11-15

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10{sup 14 }cm{sup −2} after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene.

  11. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Science.gov (United States)

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Optoelectronic properties of XIn{sub 2}S{sub 4} (X = Cd, Mg) thiospinels through highly accurate all-electron FP-LAPW method coupled with modified approximations

    Energy Technology Data Exchange (ETDEWEB)

    Yousaf, Masood [Department of Physics, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Dalhatu, S.A. [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Murtaza, G. [Department of Physics, Islamia College, Peshawar, KPK (Pakistan); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 Mascara (Algeria); Sajjad, M. [School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Musa, A. [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Rahnamaye Aliabad, H.A. [Department of Physics, Hakim Sabzevari University (Iran, Islamic Republic of); Saeed, M.A., E-mail: saeed@utm.my [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia)

    2015-03-15

    Highlights: • Highly accurate all-electron FP-LAPW+lo method is used. • New physical parameters are reported, important for the fabrication of optoelectronic devices. • A comparative study that involves FP-LAPW+lo method and modified approximations. • Computed band gap values have good agreement with the experimental values. • Optoelectronic results of fundamental importance can be utilized for the fabrication of devices. - Abstract: We report the structural, electronic and optical properties of the thiospinels XIn{sub 2}S{sub 4} (X = Cd, Mg), using highly accurate all-electron full potential linearized augmented plane wave plus local orbital method. In order to calculate the exchange and correlation energies, the method is coupled with modified techniques such as GGA+U and mBJ-GGA, which yield improved results as compared to the previous studies. GGA+SOC approximation is also used for the first time on these compounds to examine the spin orbit coupling effect on the band structure. From the analysis of the structural parameters, robust character is predicted for both materials. Energy band structures profiles are fairly the same for GGA, GGA+SOC, GGA+U and mBJ-GGA, confirming the indirect and direct band gap nature of CdIn{sub 2}S{sub 4} and MgIn{sub 2}S{sub 4} materials, respectively. We report the trend of band gap results as: (mBJ-GGA) > (GGA+U) > (GGA) > (GGA+SOC). Localized regions appearing in the valence bands for CdIn{sub 2}S{sub 4} tend to split up nearly by ≈1 eV in the case of GGA+SOC. Many new physical parameters are reported that can be important for the fabrication of optoelectronic devices. Optical spectra namely, dielectric function (DF), refractive index n(ω), extinction coefficient k(ω), reflectivity R(ω), optical conductivity σ(ω), absorption coefficient α(ω) and electron loss function are discussed. Optical’s absorption edge is noted to be 1.401 and 1.782 for CdIn{sub 2}S{sub 4} and MgIn{sub 2}S{sub 4}, respectively. The

  13. ZnTiO3 ceramic nanopowder microstructure changes during compaction

    Directory of Open Access Journals (Sweden)

    Labus N.

    2013-01-01

    Full Text Available ZnTiO3 nanopowder as a constitutive component in compact production was primarily characterized. Scanning electron micrographs of as received powder were recorded. Mercury porosimetry and nitrogen adsorption were also performed on loose powder. Particle size distribution in a water powder suspension was determined with a laser particle size analyser. Compaction was performed on different pressures in a range from 100 to 400 MPa using the uniaxial double sided compaction technique without binder and lubricant. Micrographs of compacted specimens were obtained using scanning electron microscopy and atomic force microscopy. Pore size distribution was also determined by mercury porosimetry and nitrogen adsorption. Results revealed that with increasing pressure during compaction interagglomerate pores diminish in size until they reach some critical diameter related to the intra-agglomerate pore size.

  14. Cascading electron and hole transfer dynamics in a CdS/CdTe core-shell sensitized with bromo-pyrogallol red (Br-PGR): slow charge recombination in type II regime.

    Science.gov (United States)

    Maity, Partha; Debnath, Tushar; Chopra, Uday; Ghosh, Hirendra Nath

    2015-02-14

    Ultrafast cascading hole and electron transfer dynamics have been demonstrated in a CdS/CdTe type II core-shell sensitized with Br-PGR using transient absorption spectroscopy and the charge recombination dynamics have been compared with those of CdS/Br-PGR composite materials. Steady state optical absorption studies suggest that Br-PGR forms strong charge transfer (CT) complexes with both the CdS QD and CdS/CdTe core-shell. Hole transfer from the photo-excited QD and QD core-shell to Br-PGR was confirmed by both steady state and time-resolved emission spectroscopy. Charge separation was also confirmed by detecting electrons in the conduction band of the QD and the cation radical of Br-PGR as measured from femtosecond transient absorption spectroscopy. Charge separation in the CdS/Br-PGR composite materials was found to take place in three different pathways, by transferring the photo-excited hole of CdS to Br-PGR, electron injection from the photo-excited Br-PGR to the CdS QD, and direct electron transfer from the HOMO of Br-PGR to the conduction band of the CdS QD. However, in the CdS/CdTe/Br-PGR system hole transfer from the photo-excited CdS to Br-PGR and electron injection from the photo-excited Br-PGR to CdS take place after cascading through the CdTe shell QD. Charge separation also takes place via direct electron transfer from the Br-PGR HOMO to the conduction band of CdS/CdTe. Charge recombination (CR) dynamics between the electron in the conduction band of the CdS QD and the Br-PGR cation radical were determined by monitoring the bleach recovery kinetics. The CR dynamics were found to be much slower in the CdS/CdTe/Br-PGR system than in the CdS/Br-PGR system. The formation of the strong CT complex and the separation of charges cascading through the CdTe shell help to slow down charge recombination in the type II regime.

  15. Comparative study of the electron density profiles in the compact torus plasma merging experiments

    International Nuclear Information System (INIS)

    Hayashiya, Hitoshi; Asaka, Takeo; Katsurai, Makoto

    2003-01-01

    Following two previous papers on the comparative studies of the electron density distributions for a single compact torus (CT) and a spherical tokamak (ST), and for the a single ST and a merged ST, a comparative study on the dynamics of the electron density profile and after the CT and ST plasma merging process was performed. The sharpness of the peak in the electron density profile around the mid-plane just after the merging of CT with a low safety factor (q value) such as RFP or spheromak is found to be related to the speed of the magnetic axis during the plasma merging process. It is also found that the electron density gradient near the plasma edge in a high q ST is larger than that of a low q CT. High q ST is found to be provided with the magnetic structure which is able to sustain a large thermal pressure by a strong j x B force. Despite these differences in the electron density profile between CT and ST during merging, the confinement characteristics evaluated from the number of electrons confined within the magnetic separatrix after the completion of the merging is almost similar between in the merging CT and in the merging ST. For all configurations, the electron density profiles after the completion of the merging are analogous to those of the corresponding single configuration produced without the merging process. (author)

  16. Analysis of the electronic structures of 3d transition metals doped CuGaS2 based on DFT calculations

    International Nuclear Information System (INIS)

    Zhao Zongyan; Zhou Dacheng; Yi Juan

    2014-01-01

    3d transition metals doped CuGaS 2 are considered as possible absorbing material candidates for intermediated band thin film solar cells. The electronic structure and optical properties of 3d transition metals doped CuGaS 2 are investigated by using density functional theory calculations with the GGA + U method in the present work. The doping with 3d transition metals does not obviously change the crystal structure, band gap, and optical absorption edge of the CuGaS 2 host. However, in the case of CuGa 1−x TM x S 2 (TM = Ti, V, Cr, Fe, and Ni), there is at least one distinct isolated impurity energy level in the band gap, and the optical absorption is enhanced in the ultraviolet-light region. Therefore, these materials are ideal absorber material candidates for intermediated band thin film solar cells. The calculated results are very well consistent with experimental observations, and could better explain them. (semiconductor materials)

  17. Generation of stable mixed-compact-toroid rings by inducing plasma currents in strong E rings

    International Nuclear Information System (INIS)

    Jayakumar, R.; Taggart, D.P.; Parker, M.R.; Fleischmann, H.H.

    1989-01-01

    In the RECE-Christa device, hybrid-type compact toroid rings are generated by inducing large toroidal plasma currents I rho in strong electron rings using a thin induction coil positioned along the ring axis. Starting from field-reversal values δ ο = 50 - 120 percent of the original pure fast-electron ring, the induced plasma current I rho raises δ to a maximum value of up to 240 percent with I rho contributing more than 50 percent of the total ring current. Quite interestingly, the generated hybrid compact toroid configurations appear gross-stable during the full I rho pulse length (half-amplitude width about 100 μs)

  18. Electronic structure and photocatalytic activity of wurtzite Cu–Ga–S nanocrystals and their Zn substitution

    KAUST Repository

    Kandiel, Tarek

    2015-03-23

    Stoichiometric and gallium-rich wurtzite Cu-Ga-S ternary nanocrystals were synthesized via a facile solution-based hot injection method using 1-dodecanethiol as a sulfur source. The use of 1-dodecanethiol was found to be essential not only as a sulfur source but also as a structure-directing reagent to form a metastable wurtzite structure. In addition, the substitution of zinc in the wurtzite gallium-rich Cu-Ga-S nanocrystals was also investigated. The obtained nanocrystals were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), photoluminescence (PL), and inductively coupled plasma atomic emission spectroscopy (ICP-OES). Electronic structures of pristine and the Zn-substituted Cu-Ga-S system were investigated using density functional theory (DFT) with HSE06 exchange-correlation functional. The calculated bandgaps accurately reflect the measured ones. The allowed electronic transitions occur upon the photon absorption from the (Cu + S) band towards the (Ga + S) one. The Zn substitution was found not to contribute to the band edge structure and hence altered the bandgaps only slightly, the direct transition nature remaining unchanged with the Zn substitution. The photocatalytic activities of H2 evolution from an aqueous Na2S/Na2SO3 solution under visible-light illumination on the synthesized nanocrystals were investigated. While the stoichiometric CuGaS2 exhibited negligible activity, the gallium-rich Cu-Ga-S ternary nanocrystals displayed reasonable activity. The optimum Zn substitution in the gallium-rich Cu-Ga-S ternary nanocrystals enhanced the H2 evolution rate, achieving an apparent quantum efficiency of >6% at 400 nm. © 2015 The Royal Society of Chemistry.

  19. Compact electron beam focusing column

    Science.gov (United States)

    Persaud, Arun; Leung, Ka-Ngo; Reijonen, Jani

    2001-12-01

    A novel design for an electron beam focusing column has been developed at LBNL. The design is based on a low-energy spread multicusp plasma source which is used as a cathode for electron beam production. The focusing column is 10 mm in length. The electron beam is focused by means of electrostatic fields. The column is designed for a maximum voltage of 50 kV. Simulations of the electron trajectories have been performed by using the 2D simulation code IGUN and EGUN. The electron temperature has also been incorporated into the simulations. The electron beam simulations, column design and fabrication will be discussed in this presentation.

  20. Effect of Hydrostatic Pressure on the Structural, Electronic and Optical Properties of SnS2 with a Cubic Structure: The DFT Approach

    Science.gov (United States)

    Bakhshayeshi, A.; Taghavi Mendi, R.; Majidiyan Sarmazdeh, M.

    2018-02-01

    Recently, a cubic structure of polymorphic SnS2 has been synthesized experimentally, which is stable at room temperature. In this paper, we calculated some structural, electronic and optical properties of the cubic SnS2 structure based on the full potential-linearized augmented plane waves method. We also studied the effect of hydrostatic pressure on the physical properties of the cubic SnS2 structure. Structural results show that the compressibility of the cubic SnS2 phase is greater than its trigonal phase and the compressibility decreases with increasing pressure. Investigations of the electronic properties indicate that pressure changes the density of states and the energy band gap increases with increasing pressure. The variation of energy band gap versus pressure is almost linear. We concluded that cubic SnS2 is a semiconductor with an indirect energy band gap, like its trigonal phase. The optical calculations revealed that the dielectric constant decreases with increasing pressure, and the width of the forbidden energy interval increases for electromagnetic wave propagation. Moreover, plasmonic energy and refractive index are changed with increasing pressure.

  1. Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); McKechnie, Scott; Azarhoosh, Pooya; Schilfgaarde, Mark van [Department of Physics, Kings College London, London WC2R 2LS (United Kingdom); Scanlon, David O. [University College London, Kathleen Lonsdale Materials Chemistry, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Global E" 3 Institute and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2016-03-14

    The ternary V-VI-VII chalcohalides consist of one cation and two anions. Trivalent antimony—with a distinctive 5s{sup 2} electronic configuration—can be combined with a chalcogen (e.g., S or Se) and halide (e.g., Br or I) to produce photoactive ferroelectric semiconductors with similarities to the Pb halide perovskites. We report—from relativistic quasi-particle self-consistent GW theory—that these materials have a multi-valley electronic structure with several electron and hole basins close to the band extrema. We predict ionisation potentials of 5.3–5.8 eV from first-principles for the three materials, and assess electrical contacts that will be suitable for achieving photovoltaic action from these unconventional compounds.

  2. A Compact Multiband BPF Using Step-impedance Resonators with Interdigital Capacitors

    Directory of Open Access Journals (Sweden)

    S. Meesomklin

    2016-06-01

    Full Text Available A compact multiband band-pass filter design for applications of GSM, Wi-MAX and WLAN systems is presented. The design is based on the resonant characteristics of step-impedance and interdigital capacitor resonators with overlap cross coupling structure. The fabricated filter has been operated at the fundamental, first and second harmonic resonant frequencies of 1.8 GHz, 3.7 GHz, and 5.2 GHz, respectively. The experimental results of the fabricated filter agree very well with the simulation expectations using IE3D package. The proposed filter has good performances, while the resonator size can be reduced from λ/2 to λ/8, resulting in the most compact multiband band-pass filter compared with the others using transmission line resonators .

  3. Implementation of electronic crosstalk correction for terra MODIS PV LWIR bands

    Science.gov (United States)

    Geng, Xu; Madhavan, Sriharsha; Chen, Na; Xiong, Xiaoxiong

    2015-09-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the fleet of NASA's Earth Observing Systems (EOS) in space. Terra MODIS has completed 15 years of operation far exceeding its design lifetime of 6 years. The MODIS Level 1B (L1B) processing is the first in the process chain for deriving various higher level science products. These products are used mainly in understanding the geophysical changes occurring in the Earth's land, ocean, and atmosphere. The L1B code is designed to carefully calibrate the responses of all the detectors of the 36 spectral bands of MODIS and provide accurate L1B radiances (also reflectances in the case of Reflective Solar Bands). To fulfill this purpose, Look Up Tables (LUTs), that contain calibration coefficients derived from both on-board calibrators and Earth-view characterized responses, are used in the L1B processing. In this paper, we present the implementation mechanism of the electronic crosstalk correction in the Photo Voltaic (PV) Long Wave InfraRed (LWIR) bands (Bands 27-30). The crosstalk correction involves two vital components. First, a crosstalk correction modular is implemented in the L1B code to correct the on-board Blackbody and Earth-View (EV) digital number (dn) responses using a linear correction model. Second, the correction coefficients, derived from the EV observations, are supplied in the form of LUTs. Further, the LUTs contain time stamps reflecting to the change in the coefficients assessed using the Noise Equivalent difference Temperature (NEdT) trending. With the algorithms applied in the MODIS L1B processing it is demonstrated that these corrections indeed restore the radiometric balance for each of the affected bands and substantially reduce the striping noise in the processed images.

  4. Compact circularly polarized truncated square ring slot antenna with suppressed higher resonances.

    Directory of Open Access Journals (Sweden)

    Mursyidul Idzam Sabran

    Full Text Available This paper presents a compact circularly polarized (CP antenna with an integrated higher order harmonic rejection filter. The proposed design operates within the ISM band of 2.32 GHz- 2.63 GHz and is suitable for example for wireless power transfer applications. Asymmetrical truncated edges on a square ring create a defected ground structure to excite the CP property, simultaneously realizing compactness. It offers a 50.5% reduced patch area compared to a conventional design. Novel stubs and slot shapes are integrated in the transmission line to reduce higher (up to the third order harmonics. The proposed prototype yields a -10 dB reflection coefficient (S11 impedance bandwidth of 12.53%, a 3 dB axial ratio bandwidth of 3.27%, and a gain of 5.64 dBi. Measurements also show good agreement with simulations.

  5. Flat electronic bands in fractal-kagomé network and the effect of perturbation

    Energy Technology Data Exchange (ETDEWEB)

    Nandy, Atanu, E-mail: atanunandy1989@gmail.com; Chakrabarti, Arunava, E-mail: arunava-chakrabarti@yahoo.co.in [Department of Physics, University of Kalyani, Kalyani, West Bengal - 741235 (India)

    2016-05-06

    We demonstrate an analytical prescription of demonstrating the flat band [FB] states in a fractal incorporated kagomé type network that can give rise to a countable infinity of flat non-dispersive eigenstates with a multitude of localization area. The onset of localization can, in principle, be delayed in space by an appropriate choice of energy regime. The length scale, at which the onset of localization for each mode occurs, can be tuned at will following the formalism developed within the framework of real space renormalization group. This scheme leads to an exact determination of energy eigenvalue for which one can have dispersionless flat electronic bands. Furthermore, we have shown the effect ofuniform magnetic field for the same non-translationally invariant network model that has ultimately led to an‘apparent invisibility’ of such staggered localized states and to generate absolutely continuous sub-bands in the energy spectrum and again an interesting re-entrant behavior of those FB states.

  6. Wide Band to ''Double Band'' upgrade

    International Nuclear Information System (INIS)

    Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

    1988-06-01

    The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs

  7. Diode laser spectroscopy of oxygen electronic band at 760 nm

    International Nuclear Information System (INIS)

    Lucchesini, A.; De Rosa, M.; Gozzini, S.

    1998-01-01

    Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

  8. Raytheon's next generation compact inline cryocooler architecture

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, B. R.; Bellis, L.; Ellis, M. J.; Conrad, T. [Raytheon Space and Airborne Systems, 2000 E. El Segundo Blvd., El Segundo, CA 90245 (United States)

    2014-01-29

    Since the 1970s, Raytheon has developed, built, tested and integrated high performance cryocoolers. Our versatile designs for single and multi-stage cryocoolers provide reliable operation for temperatures from 10 to 200 Kelvin with power levels ranging from 50 W to nearly 600 W. These advanced cryocoolers incorporate clearance seals, flexure suspensions, hermetic housings and dynamic balancing to provide long service life and reliable operation in all relevant environments. Today, sensors face a multitude of cryocooler integration challenges such as exported disturbance, efficiency, scalability, maturity, and cost. As a result, cryocooler selection is application dependent, oftentimes requiring extensive trade studies to determine the most suitable architecture. To optimally meet the needs of next generation passive IR sensors, the Compact Inline Raytheon Stirling 1-Stage (CI-RS1), Compact Inline Raytheon Single Stage Pulse Tube (CI-RP1) and Compact Inline Raytheon Hybrid Stirling/Pulse Tube 2-Stage (CI-RSP2) cryocoolers are being developed to satisfy this suite of requirements. This lightweight, compact, efficient, low vibration cryocooler combines proven 1-stage (RS1 or RP1) and 2-stage (RSP2) cold-head architectures with an inventive set of warm-end mechanisms into a single cooler module, allowing the moving mechanisms for the compressor and the Stirling displacer to be consolidated onto a common axis and in a common working volume. The CI cryocooler is a significant departure from the current Stirling cryocoolers in which the compressor mechanisms are remote from the Stirling displacer mechanism. Placing all of the mechanisms in a single volume and on a single axis provides benefits in terms of package size (30% reduction), mass (30% reduction), thermodynamic efficiency (>20% improvement) and exported vibration performance (≤25 mN peak in all three orthogonal axes at frequencies from 1 to 500 Hz). The main benefit of axial symmetry is that proven balancing

  9. Multi-Band (K- Q- and E-Band) Multi-Tone Millimeter-Wave Frequency Synthesizer for Radio Wave Propagation Studies

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.

    2014-01-01

    This paper presents the design and test results of a multi-band multi-tone millimeter-wave frequency synthesizer, based on a solid-state frequency comb generator. The intended application of the synthesizer is in a space-borne transmitter for radio wave atmospheric studies at K-band (18 to 26.5 GHz), Q-band (37 to 42 GHz), and E-band (71 to 76 GHz). These studies would enable the design of robust multi-Gbps data rate space-to-ground satellite communication links. Lastly, the architecture for a compact multi-tone beacon transmitter, which includes a high frequency synthesizer, a polarizer, and a conical horn antenna, has been investigated for a notional CubeSat based space-to-ground radio wave propagation experiment.

  10. Paper-based inkjet-printed tri-band U-slot monopole antenna for wireless applications

    KAUST Repository

    Abutarboush, Hattan

    2012-01-01

    Realization of a U-slot tri-band monopole antenna on a low-cost paper substrate using inkjet-printed technology is presented for the first time. The U-shaped slot is optimized to enhance the bandwidth and to achieve tri-band operation of 1.57, 3.2, and 5 GHz with measured impedance bandwidths of 3.21%, 28.1%, and 36%, respectively. The antenna is fabricated through a metallic nanoparticle ink on a standard commercial paper. Thus, the antenna can be used to cover the GPS, WiMAX, HiperLAN/2, and WLAN. The antenna has a compact size of 12 × 37.3 × 0.44 mm3 , leaving enough space for the driving electronics on the paper substrate. The impedance bandwidth, current distributions, radiation patterns, gain, and efficiency of the antenna have been studied through computer simulations and measurements. © 2002-2011 IEEE.

  11. Towards double-functionalized small diamondoids: selective electronic band-gap tuning

    International Nuclear Information System (INIS)

    Adhikari, Bibek; Fyta, Maria

    2015-01-01

    Diamondoids are nanoscale diamond-like cage structures with hydrogen terminations, which can occur in various sizes and with a diverse type of modifications. In this work, we focus on the structural alterations and the effect of doping and functionalization on the electronic properties of diamondoids, from the smallest adamantane to heptamantane. The results are based on quantum mechanical calculations. We perform a self-consistent study, starting with doping the smallest diamondoid, adamantane. Boron, nitrogen, silicon, oxygen, and phosphorus are chosen as dopants at sites which have been previously optimized and are also consistent with the literature. At a next step, an amine- and a thiol- group are separately used to functionalize the adamantane molecule. We mainly focus on a double functionalization of diamondoids up to heptamantane using both these atomic groups. The effect of isomeration in the case of tetramantane is also studied. We discuss the higher efficiency of a double-functionalization compared to doping or a single-functionalization of diamondoids in tuning the electronic properties, such as the electronic band-gap, of modified small diamondoids in view of their novel nanotechnological applications. (paper)

  12. Study of band gap and determination of size of PbS quantum dots synthesized by colloidal solution

    Directory of Open Access Journals (Sweden)

    M. S. Ghamsari

    2005-03-01

    Full Text Available   PbS semiconductor non-crystals have been synthesized in order to study the modification of their electronic structures and optical properties in relation to their size. The synthesis has been carried out by using the techniques of colloidal chemistry. Strong quantum confinement behavior has been observed based on the analysis of optical spectra of these particles. The average particle size approximated by x-ray line width and hyperbolic band model calculation. Heterogeneous broadening of optical spectrum is studied finally.

  13. Non-orthogonal internally contracted multi-configurational perturbation theory (NICPT): Dynamic electron correlation for large, compact active spaces

    Science.gov (United States)

    Kähler, Sven; Olsen, Jeppe

    2017-11-01

    A computational method is presented for systems that require high-level treatments of static and dynamic electron correlation but cannot be treated using conventional complete active space self-consistent field-based methods due to the required size of the active space. Our method introduces an efficient algorithm for perturbative dynamic correlation corrections for compact non-orthogonal MCSCF calculations. In the algorithm, biorthonormal expansions of orbitals and CI-wave functions are used to reduce the scaling of the performance determining step from quadratic to linear in the number of configurations. We describe a hierarchy of configuration spaces that can be chosen for the active space. Potential curves for the nitrogen molecule and the chromium dimer are compared for different configuration spaces. Already the most compact spaces yield qualitatively correct potentials that with increasing size of configuration spaces systematically approach complete active space results.

  14. Formation of S0s via disc accretion around high-redshift compact ellipticals

    Science.gov (United States)

    Diaz, Jonathan; Bekki, Kenji; Forbes, Duncan A.; Couch, Warrick J.; Drinkwater, Michael J.; Deeley, Simon

    2018-06-01

    We present hydrodynamical N-body models which demonstrate that elliptical galaxies can transform into S0s by acquiring a disc. In particular, we show that the merger with a massive gas-rich satellite can lead to the formation of a baryonic disc around an elliptical. We model the elliptical as a massive, compact galaxy which could be observed as a `red nugget' in the high-z universe. This scenario contrasts with existing S0 formation scenarios in the literature in two important ways. First, the progenitor is an elliptical galaxy whereas scenarios in the literature typically assume a spiral progenitor. Secondly, the physical conditions underlying our proposed scenario can exist in low-density environments such as the field, in contrast to scenarios in the literature which typically address dense environments like clusters and groups. As a consequence, S0s in the field may be the most likely candidates to have evolved from elliptical progenitors. Our scenario also naturally explains recent observations which indicate that field S0s may have older bulges than discs, contrary to cluster S0s which seem to have older discs than bulges.

  15. X-Band Thermionic Cathode RF Gun at UTNL

    CERN Document Server

    Fukasawa, Atsushi; Dobashi, Katsuhiro; Ebina, Futaro; Hayano, Hitoshi; Higo, Toshiyasu; Kaneyasu, Tatsuo; Matsuo, Kennichi; Ogino, Haruyuki; Sakae, Hisaharu; Sakamoto, Fumito; Uesaka, Mitsuru; Urakawa, Junji

    2005-01-01

    The X-band (11.424 GHz) linac for compact Compton scattering hard X-ray source are under construction at Nuclear Engineering Research Laboratory, University of Tokyo. This linac designed to accelerate up to 35 MeV, and this electron beam will be used to produce hard X-ray by colliding with laser. It consists of a thermionic cathode RF gun, an alpha magnet, and a traveling wave tube. The gun has 3.5 cells (unloaded Q is 8250) and will be operated at pi-mode. A dispenser cathode is introduced. Since the energy spread of the beam from the gun is predicted to be broad due to the continuous emission from the thermionic cathode, a slit is placed in the alpha magnet to eliminate low energy electrons. The simulation on the injector shows the beam energy 2.9 MeV, the charge 23 pC/bunch, and the emittance less than 10 mm.mrad. The experiment on the gun is planed in the beginning of 2005, and the details will be discussed on the spot.

  16. Role of advanced RF/microwave technology and high power switch technology for developing/upgrading compact/existing accelerators

    International Nuclear Information System (INIS)

    Shrivastava, Purushottam

    2001-01-01

    With the advances in high power microwave devices as well as in microwave technologies it has become possible to go on higher frequencies at higher powers as well as to go for newer devices which are more efficient and compact and hence reducing the power needs as well as space and weight requirement for accelerators. New devices are now available in higher frequency spectrum for example at C-Band, X-band and even higher. Also new devices like klystrodes/Higher Order Mode Inductive Output Tubes (HOM IOTs) are now becoming competitors for existing tubes which are in use at present accelerator complexes. The design/planning of the accelerators used for particle physics research, medical accelerators, industrial irradiation, or even upcoming Driver Accelerators for Sub Critical Reactors for nuclear power generation are being done taking into account the newer technologies. The accelerators which use magnetrons, klystrons and similar devices at S-Band can be modified/redesigned with devices at higher frequencies like X-Band. Pulsed accelerators need high power high voltage pulsed modulators whereas CW accelerators need high voltage power supplies for functioning of RF / Microwave tubes. There had been a remarkable growth in the development and availability of solid state switches both for switching the pulsed modulators for microwave tubes as well as for making high frequency switch mode power supplies. Present paper discusses some of the advanced devices/technologies in this field as well as their capability to make advanced/compact/reliable accelerators. Microwave systems developed/under development at Centre for Advanced Technology are also discussed briefly along with some of the efforts done to make them compact. An overview of state of art vacuum tube devices and solid state switch technologies is given. (author)

  17. Development and studies on a compact electron cyclotron resonance plasma source

    Science.gov (United States)

    Ganguli, A.; Tarey, R. D.; Arora, N.; Narayanan, R.

    2016-04-01

    It is well known that electron cyclotron resonance (ECR) produced plasmas are efficient, high-density plasma sources and have many industrial applications. The concept of a portable compact ECR plasma source (CEPS) would thus become important from an application point of view. This paper gives details of such a CEPS that is both portable and easily mountable on a chamber of any size. It uses a fully integrated microwave line operating at 2.45 GHz, up to 800 W, cw. The required magnetic field is produced by a set of suitably designed NdFeB ring magnets; the device has an overall length of  ≈60 cm and weighs  ≈14 kg including the permanent magnets. The CEPS was attached to a small experimental chamber to judge its efficacy for plasma production. In the pressure range of 0.5-10 mTorr and microwave power of  ≈400-500 W the experiments indicate that the CEPS is capable of producing high-density plasma (≈9  ×  1011-1012 cm-3) with bulk electron temperature in the range  ≈2-3 eV. In addition, a warm electron population with density and temperature in the range ≈7  ×  108-109 cm-3 and  ≈45-80 eV, respectively has been detected. This warm population plays an important role at high pressures in maintaining the high-density plasma, when plasma flow from the CEPS into the test chamber is strongly affected.

  18. Wide frequency independently controlled dual-band inkjet-printed antenna

    KAUST Repository

    AbuTarboush, Hattan F.

    2014-01-08

    A low-cost inkjet-printed multiband monopole antenna is presented. The unique advantage of the proposed antenna is the freedom to adjust and set the dual-band of the antenna independently over a wide range (148.83%). To demonstrate the independent control feature, the 2.4 and 3.4 GHz bands for the wireless local area network (WLAN) and worldwide interoperability for microwave access (WiMAX) applications are selected as an example. The measured impedance bandwidths for the 2.4 and 3.4 GHz are 15.2 and 23.7%, respectively. These dual-bands have the ability to be controlled independently between 1.1 and 7.5 GHz without affecting the other band. In addition, the proposed antenna can be assigned for different mobile and wireless applications such as GPS, PCS, GSM 1800, 1900, UMTS, and up to 5-GHz WLAN and WiMAX applications. The mechanism of independent control of each radiator through dimensional variation is discussed in detail. The antenna has a compact size of 10 × 37.3 × 0.44 mm3, leaving enough space for the driving electronics on the paper substrate. The measured results from the prototype are in good agreement with the simulated results. Owing to inkjet printing on an ordinary paper, the design is extremely light weight and highly suitable for low cost and large volume manufacturing. © The Institution of Engineering and Technology 2013.

  19. Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

    Science.gov (United States)

    Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

    2012-01-30

    The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

  20. Preliminary design and optimization of a G-band extended interaction oscillator based on a pseudospark-sourced electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Y., E-mail: yong.yin@strath.ac.uk, E-mail: yinyong@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom); He, W.; Zhang, L.; Yin, H.; Cross, A. W. [Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2015-07-15

    The design and simulation of a G-band extended interaction oscillator (EIO) driven by a pseudospark-sourced electron beam is presented. The characteristic of the EIO and the pseudospark-based electron beam were studied to enhance the performance of the newly proposed device. The beam-wave interaction of the EIO can be optimized by choosing a suitable pseudospark discharging voltage and by widening the operating voltage region of the EIO circuit. Simulation results show that a peak power of over 240 W can be achieved at G-band using a pseudospark discharge voltage of 41 kV.

  1. First-principles study of electronic properties of FeSe{sub 1-x}S{sub x} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sandeep, E-mail: sandeep@phy.iitb.ac.in; Singh, Prabhakar P. [Department of Physics, Indian Institute of Technology-Bombay, Mumbai-400076 (India)

    2016-05-06

    We have studied the electronic and superconducting properties of FeSe{sub 1-x}S{sub x} (x = 0.0, 0.04) alloys by first-principles calculations using the Korringa-Kohn-Rostoker Atomic Sphere Approximation within the coherent potential approximation (KKR-ASA-CPA). The electronic structure calculations show the ground states of S-doped FeSe to be nonmagnetic. We present the results of our unpolarized calculations for these alloys in terms of density of states (DOS), band structures, Fermi surfaces and the superconducting transition temperature of FeSe and FeSe{sub 0.96}S{sub 0.04} alloys. We find that the substitution of S at Se site into FeSe exhibit the subtle changes in the electronic structure with respect to the parent FeSe. We have also estimated bare Sommerfeld constant (γ{sub b}), electron-phonon coupling constant (λ) and the superconducting transition temperature (T{sub c}) for these alloys, which were found to be in good agreement with experiments.

  2. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  3. Compact XFEL and AMO sciences: SACLA and SCSS

    International Nuclear Information System (INIS)

    Yabashi, M; Tanaka, H; Tanaka, T; Tomizawa, H; Nagasono, M; Ishikawa, T; Harries, J R; Hikosaka, Y; Hishikawa, A; Nagaya, K; Saito, N; Shigemasa, E; Yamanouchi, K; Ueda, K; Togashi, T

    2013-01-01

    The concept, design and performance of Japan's compact free-electron laser (FEL) facilities, the SPring-8 Compact SASE Source test accelerator (SCSS) and SPring-8 Angstrom Compact free electron LAser (SACLA), and their applications in mainly atomic, molecular and optical science are reviewed. At SCSS, intense, ultrafast FEL pulses at extreme ultraviolet (EUV) wavelengths have been utilized for investigating various multi-photon processes in atoms, molecules and clusters by means of ion and electron spectroscopy. The quantum optical effect superfluorescence has been observed with EUV excitation. A pump–probe technique combining FEL pulses with near infrared laser pulses has been realized to study the ultrafast dynamics of atoms, molecules and clusters in the sub-picosecond regime. At SACLA, deep inner-shell multi-photon ionization by intense x-ray FEL pulses has been investigated. The development of seeded FEL sources for producing transversely and temporally coherent light, as well as the expected impact on advanced science are discussed. (invited paper)

  4. MARBLE (Multiple Antenna Radio-interferometry for Baseline Length Evaluation): Development of a Compact VLBI System for Calibrating GNSS and Electronic Distance Measurement Devices

    Science.gov (United States)

    Ichikawa, R.; Ishii, A.; Takiguchi, H.; Kimura, M.; Sekido, M.; Takefuji, K.; Ujihara, H.; Hanado, Y.; Koyama, Y.; Kondo, T.; Kurihara, S.; Kokado, K.; Kawabata, R.; Nozawa, K.; Mukai, Y.; Kuroda, J.; Ishihara, M.; Matsuzaka, S.

    2012-12-01

    We are developing a compact VLBI system with a 1.6-m diameter aperture dish in order to provide reference baseline lengths for calibration. The reference baselines are used to validate surveying instruments such as GPS and EDM and is maintained by the Geospatial Information Authority of Japan (GSI). The compact VLBI system will be installed at both ends of the reference baseline. Since the system is not sensitive enough to detect fringes between the two small dishes, we have designed a new observation concept including one large dish station. We can detect two group delays between each compact VLBI system and the large dish station based on conventional VLBI measurement. A group delay between the two compact dishes can be indirectly calculated using a simple equation. We named the idea "Multiple Antenna Radio-interferometry for Baseline Length Evaluation", or MARBLE system. The compact VLBI system is easy transportable and consists of the compact dish, a new wide-band front-end system, azimuth and elevation drive units, an IF down-converter unit, an antenna control unit (ACU), a counterweight, and a monument pillar. Each drive unit is equipped with a zero-backlash harmonic drive gearing component. A monument pillar is designed to mount typical geodetic GNSS antennas easily and an offset between the GNSS antenna reference point. The location of the azimuth-elevation crossing point of the VLBI system is precisely determined with an uncertainty of less than 0.2 mm. We have carried out seven geodetic VLBI experiments on the Kashima-Tsukuba baseline (about 54 km) using the two prototypes of the compact VLBI system between December 2009 and December 2010. The average baseline length and repeatability of the experiments is 54184874.0 ± 2.4 mm. The results are well consistent with those obtained by GPS measurements. In addition, we are now planning to use the compact VLBI system for precise time and frequency comparison between separated locations.

  5. Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

    International Nuclear Information System (INIS)

    Malashchonak, M.V.; Streltsov, E.A.; Mazanik, A.V.; Kulak, A.I.; Poznyak, S.K.; Stroyuk, O.L.; Kuchmiy, S.Ya.; Gaiduk, P.I.

    2015-01-01

    Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m 2 g −1 ) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y max = 90%; 0.1 M Na 2 S + 0.1 M Na 2 SO 3 ), but also in the sub-band-gap (SBG) range (Y max = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E U ) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E U = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E U = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E U = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles

  6. Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Malashchonak, M.V., E-mail: che.malasche@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Gaiduk, P.I. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

    2015-08-31

    Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m{sup 2}g{sup −1}) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y{sub max} = 90%; 0.1 M Na{sub 2}S + 0.1 M Na{sub 2}SO{sub 3}), but also in the sub-band-gap (SBG) range (Y{sub max} = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E{sub U}) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E{sub U} = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E{sub U} = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E{sub U} = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles.

  7. Deformation effects in electronic spectra of the layered semiconductors TlGaS sub 2 , TlGaSe sub 2 and TlInS sub 2

    CERN Document Server

    Allakhverdiev, K R; Suleymanov, R A; Gasanov, N Z

    2003-01-01

    The deformation effects in electronic spectra of the ternary layered semiconductors TlGaS sub 2 , TlGaSe sub 2 and TlInS sub 2 are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions on the band gap of the crystals investigated can be described in the framework of one common model of deformation potentials. This model appears to be close to that of layered semiconductors of the A sub 3 B sub 6 group, attesting to the fact that the main principles of formation of band structure in these two groups of layered crystals are the same.

  8. Effect of superconductivity on the cubic to tetragonal structural transition due to a two-fold degenerate electronic band

    International Nuclear Information System (INIS)

    Ghatak, S.K.; Khanra, B.C.; Ray, D.K.

    1978-01-01

    The effect of the BCS superconductivity on the cubic to tetragonal structural transition arising from a two-fold degenerate electronic band is investigated within the mean field approximation. The phase diagram of the two transitions is given for a half filled esub(g)-band. Modification of the two transitions when they are close together is also discussed. (author)

  9. NOx reduction by compact electron beam processing

    International Nuclear Information System (INIS)

    Penetrante, B.M.; Hsiao, M.C.; Merritt, B.T.; Wallman, P.H.; Vogtlin, G.E.

    1995-01-01

    Among the new methods being investigated for the post-combustion removal of nitrogen oxides (NO x ) are based on non-thermal plasmas. These plasmas can be produced by electrical discharge methods or electron beam irradiation. The application of electron beam irradiation for NO x removal in power plant flue gases has been investigated since the early 1970's in both laboratory- and pilot-scale experiments. Electrical discharge methods are relatively new entrants in the field of flue gas cleanup. Pulsed corona and dielectric-barrier discharge techniques are two of the more commonly used electrical discharge methods for producing nonthermal plasmas at atmospheric pressure. There are basically two types of reactions responsible for the depletion of NO by non-thermal plasmas: oxidation and reduction

  10. Role of Electronic Structure In Ion Band State Theory of Low Energy Nuclear Reactions

    Science.gov (United States)

    Chubb, Scott

    2004-03-01

    The Nuts and Bolts of our Ion Band State (IBS) theory of low energy nuclear reactions (LENR's) in palladium-deuteride (PdD) and palladium-hydride (PdH) are the electrons that hold together or tear apart the bonds (or lack of bonds) between deuterons (d's) or protons (p's) and the host material. In PdDx and PdH_x, this bonding is strongly correlated with loading: in ambient loading conditions (x< 0. 6), the bonding in hibits IBS occupation. As x arrow 1, slight increases and decreases in loading can lead to vibrations (which have conventionally been thought to occur from phonons) that can induce potential losses or increases of p/d. Naive assumptions about phonons fail to include these losses and increases. These effects can occur because neither H or D has core electrons and because in either PdD or PdH, the electrons near the Fermi Energy have negligible overlap with the nucleus of either D or H. I use these ideas to develop a formal justification, based on a generalization of conventional band theory (Scott Chubb, "Semi-Classical Conduction of Charged and Neutral Particles in Finite Lattices," 2004 March Meeting."), for the idea that occupation of IBS's can occur and that this can lead to nuclear reactions.

  11. Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure

    International Nuclear Information System (INIS)

    Kunert, H.W.; Machatine, A.G.J.; Malherbe, J.B.; Barnas, J.; Hoffmann, A.; Wagner, M.R.

    2008-01-01

    We have examined the effect of Time Reversal Symmetry (TRS) on vibrational modes and on the electronic band structure of Si and Ge. Most of the primary non-interacting modes are not affected by TRS. Only phonons originating from high symmetry lines S and A of the Brillouin Zone (BZ) indicate extra degeneracy. Selection rules for some two and three phonons originating from high symmetry lines are determined. The states of electrons and holes described by electronic band structure due to spin-inclusion are assigned by spinor representations of the double space group. Inclusion of the TRS into the band structure results in extra degeneracy of electrons and holes, and therefore optical selection rules suppose to be modified

  12. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    International Nuclear Information System (INIS)

    Reshak, A.H.; Khan, Saleem Ayaz; Kamarudin, H.; Bila, Jiri

    2014-01-01

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor

  13. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Khan, Saleem Ayaz, E-mail: sayaz_usb@yahoo.com [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic)

    2014-01-05

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor.

  14. Application of mid-infrared free-electron laser tuned to amide bands for dissociation of aggregate structure of protein.

    Science.gov (United States)

    Kawasaki, Takayasu; Yaji, Toyonari; Ohta, Toshiaki; Tsukiyama, Koichi

    2016-01-01

    A mid-infrared free-electron laser (FEL) is a linearly polarized, high-peak powered pulse laser with tunable wavelength within the mid-infrared absorption region. It was recently found that pathogenic amyloid fibrils could be partially dissociated to the monomer form by the irradiation of the FEL targeting the amide I band (C=O stretching vibration), amide II band (N-H bending vibration) and amide III band (C-N stretching vibration). In this study, the irradiation effect of the FEL on keratin aggregate was tested as another model to demonstrate an applicability of the FEL for dissociation of protein aggregates. Synchrotron radiation infrared microscopy analysis showed that the α-helix content in the aggregate structure decreased to almost the same level as that in the monomer state after FEL irradiation tuned to 6.06 µm (amide I band). Both irradiations at 6.51 µm (amide II band) and 8.06 µm (amide III band) also decreased the content of the aggregate but to a lesser extent than for the irradiation at the amide I band. On the contrary, the irradiation tuned to 5.6 µm (non-absorbance region) changed little the secondary structure of the aggregate. Scanning-electron microscopy observation at the submicrometer order showed that the angular solid of the aggregate was converted to non-ordered fragments by the irradiation at each amide band, while the aggregate was hardly deformed by the irradiation at 5.6 µm. These results demonstrate that the amide-specific irradiation by the FEL was effective for dissociation of the protein aggregate to the monomer form.

  15. Airborne S-Band SAR for Forest Biophysical Retrieval in Temperate Mixed Forests of the UK

    Directory of Open Access Journals (Sweden)

    Ramesh K. Ningthoujam

    2016-07-01

    Full Text Available Radar backscatter from forest canopies is related to forest cover, canopy structure and aboveground biomass (AGB. The S-band frequency (3.1–3.3 GHz lies between the longer L-band (1–2 GHz and the shorter C-band (5–6 GHz and has been insufficiently studied for forest applications due to limited data availability. In anticipation of the British built NovaSAR-S satellite mission, this study evaluates the benefits of polarimetric S-band SAR for forest biophysical properties. To understand the scattering mechanisms in forest canopies at S-band the Michigan Microwave Canopy Scattering (MIMICS-I radiative transfer model was used. S-band backscatter was found to have high sensitivity to the forest canopy characteristics across all polarisations and incidence angles. This sensitivity originates from ground/trunk interaction as the dominant scattering mechanism related to broadleaved species for co-polarised mode and specific incidence angles. The study was carried out in the temperate mixed forest at Savernake Forest and Wytham Woods in southern England, where airborne S-band SAR imagery and field data are available from the recent AirSAR campaign. Field data from the test sites revealed wide ranges of forest parameters, including average canopy height (6–23 m, diameter at breast-height (7–42 cm, basal area (0.2–56 m2/ha, stem density (20–350 trees/ha and woody biomass density (31–520 t/ha. S-band backscatter-biomass relationships suggest increasing backscatter sensitivity to forest AGB with least error between 90.63 and 99.39 t/ha and coefficient of determination (r2 between 0.42 and 0.47 for the co-polarised channel at 0.25 ha resolution. The conclusion is that S-band SAR data such as from NovaSAR-S is suitable for monitoring forest aboveground biomass less than 100 t/ha at 25 m resolution in low to medium incidence angle range.

  16. Microstructural evolution in adiabatic shear bands of copper at high strain rates: Electron backscatter diffraction characterization

    International Nuclear Information System (INIS)

    Tang Lin; Chen Zhiyong; Zhan Congkun; Yang Xuyue; Liu Chuming; Cai Hongnian

    2012-01-01

    The microstructural evolution of adiabatic shear bands in annealed copper with different large strains at high strain rates has been investigated by electron backscatter diffraction. The results show that mechanical twinning can occur with minimal contribution to shear localization under dynamic loading. Elongated ultrafine grains with widths of 100–300 nm are observed during the evolution of the adiabatic shear bands. A rotational dynamic recrystallization mechanism is proposed to explain the formation of the elongated ultrafine grains. - Highlights: ► The microstructural evolution of ASB is studied by electron backscatter diffraction. ► Twinning can occur in ASB while the contribution to shear localization is slight. ► Elongated ultrafine grains are observed during the evolution process of ASB. ► A possible mechanism is proposed to explain the microstructure evolution of ASB.

  17. A Compact MIMO Antenna with Inverted C-Shaped Ground Branches for Mobile Terminals

    Directory of Open Access Journals (Sweden)

    Zixian Yang

    2016-01-01

    Full Text Available A compact printed MIMO antenna for mobile terminals is presented. With two planar antenna elements, the −6 dB impedance bandwidth of 2.32 GHz (1.48–3.8 GHz is obtained, which covers GSM 1800/1900, UMTS, WLAN, Wimax, S-band, and most of LTE bands. Each antenna element with a small occupation of 15 × 20 mm2 consists of a driven strip and a shorted strip. Two inverted C-shaped ground branches are introduced between two elements to improve the isolation. The simulated results are studied and the measured results show that high isolation of more than 18 dB at the entire operating band is achieved. Meanwhile, the impedance performance is also improved by adding the branches. Furthermore, the measured radiation performances and envelope correlation coefficient also demonstrate that the proposed antenna could be a good candidate for mobile terminals.

  18. Optical band gap of ZnO thin films deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.

    2006-01-01

    Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)

  19. Development of new S-band RF window for stable high-power operation in linear accelerator RF system

    Science.gov (United States)

    Joo, Youngdo; Lee, Byung-Joon; Kim, Seung-Hwan; Kong, Hyung-Sup; Hwang, Woonha; Roh, Sungjoo; Ryu, Jiwan

    2017-09-01

    For stable high-power operation, a new RF window is developed in the S-band linear accelerator (Linac) RF systems of the Pohang Light Source-II (PLS-II) and the Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL). The new RF window is designed to mitigate the strength of the electric field at the ceramic disk and also at the waveguide-cavity coupling structure of the conventional RF window. By replacing the pill-box type cavity in the conventional RF window with an overmoded cavity, the electric field component perpendicular to the ceramic disk that caused most of the multipacting breakdowns in the ceramic disk was reduced by an order of magnitude. The reduced electric field at the ceramic disk eliminated the Ti-N coating process on the ceramic surface in the fabrication procedure of the new RF window, preventing the incomplete coating from spoiling the RF transmission and lowering the fabrication cost. The overmoded cavity was coupled with input and output waveguides through dual side-wall coupling irises to reduce the electric field strength at the waveguide-cavity coupling structure and the possibility of mode competitions in the overmoded cavity. A prototype of the new RF window was fabricated and fully tested with the Klystron peak input power, pulse duration and pulse repetition rate of 75 MW, 4.5 μs and 10 Hz, respectively, at the high-power test stand. The first mass-produced new RF window installed in the PLS-II Linac is running in normal operation mode. No fault is reported to date. Plans are being made to install the new RF window to all S-band accelerator RF modules of the PLS-II and PAL-XFEL Linacs. This new RF window may be applied to the output windows of S-band power sources like Klystron as wells as the waveguide windows of accelerator facilities which operate in S-band.

  20. A Compact Kapton-based Inkjet Printed Multiband Antenna for Flexible Wireless Devices

    KAUST Repository

    Ahmed, Sana

    2015-04-20

    A low cost inkjet printed multiband antenna envisioned for integration into flexible and conformal mobile devices is presented. The antenna structure contains a novel triangular iterative design with coplanar waveguide (CPW) feed, printed on a Kapton polyimide-based flexible substrate with dimensions of 70 x 70 x 0.11 mm3. The antenna covers four wide frequency bands with measured impedance bandwidths of 54.4%, 14%, 23.5% and 17.2%, centered at 1.2, 2.0, 2.6 and 3.4 GHz, respectively, thus, enabling it to cover GSM 900, GPS, UMTS, WLAN, ISM, Bluetooth, LTE 2300/ 2500 and WiMAX standards. The antenna has omnidirectional radiation pattern with a maximum gain of 2.1 dBi. To characterize the flexibility of the antenna, the fabricated prototype is tested in convex and concave bent configurations for radii of 78mm and 59mm. The overall performance remains unaffected, except a minor shift of 20 MHz and 60 MHz in S11, for concave bending at both radii. The compact, lightweight and conformal design as well as multiband performance in bent configurations, proves the suitability of the antenna for future electronic devices.

  1. Deformation bands, early markers of tectonic activity in front of a fold-and-thrust belt: Example from the Tremp-Graus basin, southern Pyrenees, Spain

    Science.gov (United States)

    Robert, Romain; Robion, Philippe; Souloumiac, Pauline; David, Christian; Saillet, Elodie

    2018-05-01

    Strain localization in a porous calcarenite facies of the Aren formation in the Tremp basin was studied. This Maastrichtian syn-tectonic formation exposed in front of the Boixols thrust, in the Central South Pyrenean Zone, hosts bedding perpendicular deformation bands. These bands are organized in two major band sets, striking East-West and N-020 respectively. Both populations formed during early deformation stages linked to the growth of the fold and thrust. A magnetic fabric study (Anisotropy of Magnetic Susceptibility, AMS) was carried out to constrain the shortening direction responsible for the deformation bands development during the upper Cretaceous-Paleocene N-S contraction in the region, which allowed us to define populations of Pure Compaction Bands (PCB) and Shear Enhanced Compaction Bands (SECB) regarding their orientations compared to the shortening direction. Both sets are formed by cataclastic deformation, but more intense in the case of SECBs, which are also thinner than PCBs. The initial pore space is both mechanically reduced and chemically filled by several cementation phases. We propose a geomechanical model based on the regional context of layer parallel shortening, thrusting and strike-slip tectonics considering the burial history of the formation, in order to explain the development of both types of bands at remarkably shallow depths.

  2. Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Junay, A.; Guézo, S., E-mail: sophie.guezo@univ-rennes1.fr; Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F. [Département Matériaux-Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS-Université de Rennes 1, Campus de Beaulieu, Bât 11E, 35042 Rennes Cedex (France)

    2015-08-28

    We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.

  3. Compactness in quasi-Banach function spaces and applications to compact embeddings of Besov-type spaces

    Czech Academy of Sciences Publication Activity Database

    Caetano, A.M.; Gogatishvili, Amiran; Opic, B.

    2016-01-01

    Roč. 146, č. 5 (2016), s. 905-927 ISSN 0308-2105 R&D Projects: GA ČR GA13-14743S Institutional support: RVO:67985840 Keywords : quasi-Banach function space * compactness * compact embedding Subject RIV: BA - General Mathematics Impact factor: 1.158, year: 2016 http:// journals .cambridge.org/action/displayAbstract?fromPage=online&aid=10379393&fileId=S0308210515000761

  4. Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems

    International Nuclear Information System (INIS)

    Peterman, D.J.

    1980-01-01

    Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH 2 and YH 2 were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH 2 cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 2 lattice. These experimental results also suggest that, in contrast to recent calculations, LaH 3 is a small-band-gap semiconductor

  5. Opto-electronic characterization of polycrystalline CuInS2 and Cu(In,Ga)S2 absorber layers by photoluminescence

    International Nuclear Information System (INIS)

    Heidemann, Florian

    2011-01-01

    Photoluminescence (PL) is an established method to characterize the optoelectronic properties of solar cell absorber layers. With the help of Planck's generalized law it is in principle possible to determine the quasi-Fermi level splitting - which is the upper limit of the open circuit voltage V oc - and the absorption coefficient of a solar cell before its actual completion. For large-scale measurements (mm/cm regime) this is valid for absorber layers with lateral homogeneous properties, however it is not directly transferable to polycrystalline semiconductors due to laterally fluctuating opto-electronic and structural parameters. The lateral fluctuations in opto-electronic properties of polycrystalline Cu(In 1-ξ Ga ξ )S 2 have been analyzed (e.g. with respect to fluctuations in quasi-Fermi level splitting, optical band-gap and sub band-gap absorbance) by measuring laterally and spectrally resolved PL on the μm-scale and providing the transition towards macroscopic PL measurements on the mm-scale. To give a comprehensive characterization, surface roughness and optical properties have been studied and methods for feature extraction have been applied. On the microscopic scale variations in the quasi-Fermi level splitting Δ x,y E Fnp of about 38 meV (CuInS 2 ) and 53 meV (Cu(In,Ga)S 2 ) have been found. From local absorbance spectra extracted from PL measurements on Cu(In,Ga)S 2 fluctuations in the optical band-gap E opt with a full width at half maximum of FWHM E opt ∼80 meV could be extracted, whereas band-gap fluctuations in CuInS 2 are found to be negligible. Thus band-gap fluctuations seem to be mainly caused by a varying gallium (Ga) content. Furthermore, regions with higher E opt and with it a potential higher Ga content, show a higher quasi-Fermi level splitting. As a major limiting factor for the local quasi-Fermi level splitting E Fnp the local density of deep defects could be identified. Due to low luminescence yields of Cu(In 1-ξ Ga ξ )S 2 under

  6. Origin of Spectral Band Patterns in the Cosmic Unidentified Infrared Emission

    Science.gov (United States)

    Álvaro Galué, Héctor; Díaz Leines, Grisell

    2017-10-01

    The cosmic unidentified infrared emission (UIE) band phenomenon is generally considered as indicative of free-flying polycyclic aromatic hydrocarbon molecules in space. However, a coherent explanation of emission spectral band patterns depending on astrophysical source is yet to be resolved under this attribution. Meanwhile astronomers have restored the alternative origin as due to amorphous carbon particles, but assigning spectral patterns to specific structural elements of particles is equally challenging. Here we report a physical principle in which inclusion of nonplanar structural defects in aromatic core molecular structures (π domains) induces spectral patterns typical of the phenomenon. We show that defects in model π domains modulate the electronic-vibration coupling that activates the delocalized π -electron contribution to aromatic vibrational modes. The modulation naturally disperses C =C stretch modes in band patterns that readily resemble the UIE bands in the elusive 6 - 9 μ m range. The electron-vibration interaction mechanics governing the defect-induced band patterns underscores the importance of π delocalization in the emergence of UIE bands. We discuss the global UIE band regularity of this range as compatible with an emission from the delocalized s p2 phase, as π domains, confined in disordered carbon mixed-phase aggregates.

  7. First-principle study of the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP

    Science.gov (United States)

    Yang, H. Q.; Song, T. L.; Liang, X. X.; Zhao, G. J.

    2015-01-01

    In this work, the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP are studied by the first principle calculations. The software QUANTUM ESPRESSO and the generalized gradient approximation (GGA) for the exchange correlations have been used in the calculations. We calculate the lattice parameter, band gap and effective mass of the ternary alloy GaxIn1-xP for the Ga composition x varying from 0.0 to 1.0 by the step of 0.125. The effect of the Ga composition on the lattice parameter and the electronic density of states are discussed. The results show that the lattice parameter varies with the composition almost linearly following the Vegard's law. A direct-to-indirect band-gap crossover is found to occur close to x = 0.7. The effective masses are also calculated at Γ(000) high symmetry point along the [100] direction. The results show that the band gap and the electron effective mass vary nonlinearly with composition x.

  8. Status of the C-band RF System for the SPARC-LAB high brightness photo-injector

    CERN Document Server

    Boni, R.; Bellaveglia, M.; Di Pirro, G.; Ferrario, M.; Gallo, A.; Spataro, B.; Mostacci, A.; Palumbo, L.

    2013-01-01

    The high brightness photo-injector in operation at the SPARC-LAB facility of the INFN-LNF, Italy, consists of a 150 MeV S-band electron accelerator aiming to explore the physics of low emittance high peak current electron beams and the related technology. Velocity bunching techniques, SASE and Seeded FEL experiments have been carried out successfully. To increase the beam energy so improving the performances of the experiments, it was decided to replace one S-band travelling wave accelerating cavity, with two C-band cavities that allow to reach higher energy gain per meter. The new C-band system is in advanced development phase and will be in operation early in 2013. The main technical issues of the C-band system and the R&D activities carried out till now are illustrated in detail in this paper.

  9. Natural and laboratory compaction bands in porous carbonates: a three-dimensional characterization using synchrotron X-ray computed microtomography

    Science.gov (United States)

    Cilona, A.; Arzilli, F.; Mancini, L.; Emanuele, T.

    2014-12-01

    Porous carbonates form important reservoirs for water and hydrocarbons. The fluid flow properties of carbonate reservoirs may be affected by post-depositional processes (e.g., mechanical and chemical), which need to be quantified. Field-based studies described bed-parallel compaction bands (CBs) within carbonates with a wide range of porosities. These burial-related structures accommodate volumetric strain by grain rotation, translation, pore collapse and pressure solution. Recently, the same structures have been reproduced for the first time in the laboratory by performing triaxial compaction experiments on porous grainstones. These laboratory studies characterized and compared the microstructures of natural and laboratory CBs, but no analysis of pore connectivity has been performed. In this paper, we use an innovative approach to characterize the pore networks (e.g. porosity, connectivity) of natural and laboratory CBs and compare them with the host rock one. We collected the data using the synchrotron X-ray computed microtomography technique at the SYRMEP beamline of the Elettra-Sincrotrone Trieste Laboratory (Italy). Quantitative analyses of the samples were performed with the Pore3D software library. The porosity was calculated from segmented 3D images of pristine and deformed carbonates. A process of skeletonization was then applied to quantify the number of connected pores within the rock volume. The analysis of the skeleton allowed us to highlight the differences between natural and laboratory CBs, and to investigate how pore connectivity evolves as a function of different deformation pathways. Both pore volume and connectivity are reduced within the CBs respect to the pristine rock and the natural CB has a lower porosity with respect to the laboratory one. The grain contacts in the natural CB are welded, whereas in the laboratory one they have more irregular shapes and grain crushing is the predominant process.

  10. Electronic Energy Levels and Band Alignment for Aqueous Phenol and Phenolate from First Principles.

    Science.gov (United States)

    Opalka, Daniel; Pham, Tuan Anh; Sprik, Michiel; Galli, Giulia

    2015-07-30

    Electronic energy levels in phenol and phenolate solutions have been computed using density functional theory and many-body perturbation theory. The valence and conduction bands of the solvent and the ionization energies of the solutes have been aligned with respect to the vacuum level based on the concept of a computational standard hydrogen electrode. We have found significant quantitative differences between the generalized-gradient approximation, calculations with the HSE hybrid functional, and many-body perturbation theory in the G0W0 approximation. For phenol, two ionization energies below the photoionization threshold of bulk water have been assigned in the spectrum of Kohn-Sham eigenvalues of the solution. Deprotonation to phenolate was found to lift a third occupied energy level above the valence band maximum of the solvent which is characterized by an electronic lone pair at the hydroxyl group. The second and third ionization energies of phenolate were found to be very similar and explain the intensity pattern observed in recent experiments using liquid-microjet photoemission spectroscopy.

  11. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyan, Rajesh [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); Oulad Elhmaidi, Zakaria [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); Sekkat, Zouheir [Optics & Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat (Morocco); Abd-lefdil, Mohammed [University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); El Khakani, My Ali, E-mail: elkhakani@emt.inrs.ca [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada)

    2017-02-28

    Highlights: • High quality CZTS thin films grown by means of PLD technique without resorting to any post sulfurization process. • Effect of thermal annealing treatments (in the 200–500 °C range) on the structural, morphological and optoelectronic properties of PLD-CZTS films. • Experimental determination of key optoelectronic parameters (i.e.; E{sub g}, VBM, ϕ, I{sub p}, and χ) enabling the reconstruction of energy band electronic structure of the PLD-CZTS films. • Investigation on the energy band alignments of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials. - Abstract: We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (T{sub a}), but their crystallinity is much improved for T{sub a} ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with T{sub a} (from ∼14 nm at RT to 70 nm at T{sub a} = 500 °C with a value around 40 nm for T{sub a} = 300–400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV–vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at T{sub a} = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS

  12. Improvement of the quality of laser-wakefield accelerators: towards a compact free-electron laser

    International Nuclear Information System (INIS)

    Lehe, R.

    2014-01-01

    When an intense and short laser pulse propagates through an underdense gas, it can accelerate a fraction of the electrons of the gas, and thereby generate an electron bunch with an energy of a few hundreds of MeV. This phenomenon, which is referred to as laser-wakefield acceleration, has many potential applications, including the design of ultra-bright X-ray sources known as free electron lasers (FEL). However, these applications require the electron bunch to have an excellent quality (low divergence, emittance and energy spread). In this thesis, different solutions to improve the quality of the electron bunch are developed, both analytically and through the use of Particle-In-Cell (PIC) simulations. It is first shown however that PIC simulations tend to erroneously overestimate the emittance of the bunch, due to the numerical Cherenkov effect. Thus, in order to correctly estimate the emittance, a modified PIC algorithm is proposed, which is not subject to this unphysical Cherenkov effect. Using this algorithm, we have observed and studied a new mechanism to generate the electron bunch: optical transverse injection. This mechanism can produce bunches with a high charge, a low emittance and a low energy spread. In addition, we also proposed an experimental setup - the laser-plasma lens - which can strongly reduce the final divergence of the bunch. Finally, these results are put into context by discussing the properties required for the design of a compact FEL. It is shown in particular that laser-wakefield accelerator could be advantageously combined with innovative laser-plasma undulators, in order to produce bright X-rays sources. (author)

  13. DAQ cards for the Compact Muon Solenoid: a successful technology transfer case

    CERN Document Server

    Barone, M; Geralis, T; Mastroyiannopoulos, N; Tzamarias, S; Zachariadou, K; Tsoussis, L

    2002-01-01

    In this paper we give the description of a project accomplished by a collaboration of researchers, engineers and managers from a Greek medium-size company Hourdakis Electronics S.A and the research laboratories CERN in Geneva and DEMOKRITOS in Athens. The project involved the production of 22 input-output DAQ electronic modules to be used for R&D purposes in the Compact Muon Solenoid experiment of LHC at CERN. This project can be considered a successful technology transfer. (3 refs).

  14. A Ka-Band Celestial Reference Frame with Applications to Deep Space Navigation

    Science.gov (United States)

    Jacobs, Christopher S.; Clark, J. Eric; Garcia-Miro, Cristina; Horiuchi, Shinji; Sotuela, Ioana

    2011-01-01

    The Ka-band radio spectrum is now being used for a wide variety of applications. This paper highlights the use of Ka-band as a frequency for precise deep space navigation based on a set of reference beacons provided by extragalactic quasars which emit broadband noise at Ka-band. This quasar-based celestial reference frame is constructed using X/Ka-band (8.4/32 GHz) from fifty-five 24-hour sessions with the Deep Space Network antennas in California, Australia, and Spain. We report on observations which have detected 464 sources covering the full 24 hours of Right Ascension and declinations down to -45 deg. Comparison of this X/Ka-band frame to the international standard S/X-band (2.3/8.4 GHz) ICRF2 shows wRMS agreement of approximately 200 micro-arcsec in alpha cos(delta) and approximately 300 micro-arcsec in delta. There is evidence for systematic errors at the 100 micro-arcsec level. Known errors include limited SNR, lack of instrumental phase calibration, tropospheric refraction mis-modeling, and limited southern geometry. The motivation for extending the celestial reference frame to frequencies above 8 GHz is to access more compact source morphology for improved frame stability and to support spacecraft navigation for Ka-band based NASA missions.

  15. Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling

    Science.gov (United States)

    Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi

    2017-10-01

    We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.

  16. Band gap engineering for graphene by using Na+ ions

    International Nuclear Information System (INIS)

    Sung, S. J.; Lee, P. R.; Kim, J. G.; Ryu, M. T.; Park, H. M.; Chung, J. W.

    2014-01-01

    Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E g ) at DP in a controlled way by depositing positively charged Na + ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na + ions is found to deplete the π* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E g . The band gap increases with increasing Na + coverage with a maximum E g ≥0.70 eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na + ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na + ions, which may play a vital role in utilizing graphene in future nano-electronic devices.

  17. Effect of density of state on isotope effect exponent of two-band superconductors

    International Nuclear Information System (INIS)

    Udomsamuthirun, P.; Kumvongsa, C.; Burakorn, A.; Changkanarth, P.; Yoksan, S.

    2005-01-01

    The exact formula of T c 's equation and the isotope effect exponent of two-band s-wave superconductors in weak-coupling limit are derived by considering the influence of two kinds of density of state: constant and van Hove singularity. The paring interaction in each band consisted of two parts: the electron-phonon interaction and non-electron-phonon interaction are included in our model. We find that the interband interaction of electron-phonon show more effect on isotope exponent than the intraband interaction and the isotope effect exponent with constant density of state can fit to experimental data, MgB 2 and high-T c superconductor, better than van Hove singularity density of state

  18. Electronic Structure of Eu6C60

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Xiong; LI Hong-Nian; XU Ya-Bo; WANG Peng; ZHANG Wen-Hua; XU Fa-Qiang

    2009-01-01

    We study the valence band of Eu-intercalated C60 by synchrotron radiation photoelectron spectroscopy to un-derstand the ferromagnetism (FM) and the giant magnetoresistance (GMR) of Eu6C60. The results reveal the semiconducting property and the remarkable 5d6s-π hybridization. Eu-C60 bonding has both ionic and covalent contributions. No more than half the 5d6s electrons transfer from Eu to the LUMO derived band of C60, and the LUMO+1 derived band is not filled. The remaining valence electrons of Eu, together with some π (LUMO, HOMO and HOMO-1) electrons, constitute the covalent bond. The electronic structure implies that the magnetic coupling in Eu6C60 should be through the intra-atomic f-sd exchange and the medium of the π electrons. The possibility of the GMR being tunnelling magnetoresistance is ruled out.

  19. Compact U-Slotted Antenna for Broadband Radar Applications

    Directory of Open Access Journals (Sweden)

    S. Costanzo

    2013-01-01

    Full Text Available The original U-shaped patch antenna is properly modified in this work to provide a compact and broadband antenna configuration with reduced cross-polar effects, well suitable for modern radar applications. The proposed antenna layout is applied to design, realize, and test two different prototypes working at P-band and C-band, typically adopted for ground-penetrating radar. The experimental results successfully demonstrate a large operating bandwidth between 15% and 20%, a significant reduction of size (about half of the standard configuration, and a low cross-polarization level within the operating frequency range.

  20. Compact toroidal energy storage device with relativistically densified electrons through the use of travelling magnetic waves

    International Nuclear Information System (INIS)

    Peter, W.; Faehl, R.J.

    1983-01-01

    A new concept for a small compact multimegajoule energy storage device utilizing relativistically densified electron beam circulating in a torus is presented. The electron cloud is produced through inductive charge injection by a travelling magnetic wave circulating the torus. Parameters are given for two representative toroidal energy storage devices, consisting of 1 m and 32 m in radius respectively, which could store more than 4 x 10 17 electrons and 30' MJ in energy. The concept utilizes the idea that large electric and magnetic fields can be produced by a partially space-charge neutralized intense relativistic electron beam which could become many orders of magnitude greater than the externally applied field confining the beam. In the present approach, the electron cloud densification can be achieved gradually by permitting multiple traversals of the magnetic wave around the torus. The magnetic mirror force acts on the orbital magnetic electron dipole moment and completely penetrates the entire electron cloud. As the electrons gain relativistic energies, the beam can be continuously densified at the front of the travelling wave, where the magnetic field is rising with time. The use of travelling magnetic wave to accelerate an electron cloud and the use of large electric field at the thusly accelerated cloud form the basis for a high beam intensity and hence high energy storage. Technical considerations and several potential applications, which include the driving of a powerful gyrotron, are discussed