International Nuclear Information System (INIS)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage ...

International Nuclear Information System (INIS)

Power extraction using a dielectric-loaded (DL) waveguide is a way to generate high-power radio frequency (RF) waves for future particle accelerators, especially for two-beam-acceleration. In a two-beam-acceleration scheme, a low-energy, high-current particle beam is passed through a deceleration section of waveguide (decelerator), where the power from the beam is partially transferred to trailing electromagnetic waves (wakefields); then with a properly designed RF output coupler, the power generated in the decelerator is extracted to an output waveguide, where finally the power can be transmitted and used to accelerate another usually high-energy low-current beam. The decelerator, together with the RF output coupler, is called a power extractor. At Argonne Wakefield Accelerator (AWA), we designed a 7.8GHz power extractor with a circular DL waveguide and tested it with single electron bunches and bunch ...

UK PubMed Central (United Kingdom)

Currently several groups are actively researching the integration of a megavoltage teletherapy unit with magnetic resonance (MR) imaging for real-time image-guided radiotherapy. The use of a...Full Text Available

International Nuclear Information System (INIS)

The electromagnetic properties of a prototype gravitational wave detector, based on two coupled superconducting microwave cavities, were tested. The radio-frequency (rf) detection system was carefully analysed. With the use of piezoelectric crystals small harmonic displacements of the cavity walls were induced and the parametric conversion of the electromagnetic field inside the cavities explored. Experimental results of bandwidth and sensitivity of the parametric converter versus stored energy and voltage applied to the piezoelectric crystal are reported. A rf control loop, developed to stabilize phase changes on signal paths, gave a 125 dBc rejection of the drive mode on a time scale of 1 h.

International Nuclear Information System (INIS)

Nitriding of aluminium 2011 using a radio frequency plasma at higher power levels (500 and 700 W) and lower substrate temperature (500 deg. C) resulted in higher AlN/Al_2O_3 ratios than obtained at 100 W and 575 deg. C. AlN/Al_2O_3 ratios derived from X-ray photoelectron spectroscopic analysis (and corroborated by heavy ion elastic recoil time of flight spectrometry) for treatments preformed at 100 (575 deg. C), 500 (500 deg. C) and 700 W (500 deg. C) were 1.0, 1.5 and 3.3, respectively. Scanning electron microscopy revealed that plasma nitrided surfaces obtained at higher power levels exhibited much finer nodular morphology than obtained at 100 W.

British Library Electronic Table of Contents (United Kingdom)

Concrete is the primary material for building envelopes in some parts of the world, and its ability to store heat as well as its dynamic temperature changes will not only affect the deterioration rate of the exterior wall but will also greatly influence the energy efficiency of interior air conditioning. There are many methods for measuring the inner temperature of concrete, but they often have limitations, such as indirect estimation, cable installation requirements, high cost, or heterogeneity of the sample structure. In order to measure the internal temperature of concrete, this study integrated a Radio Frequency Integrated Circuit (RFIC) with a temperature sensor chip and embedded the device in concrete structures. A Smart Temperature Information Material (STIM) was thus developed. Thi...

Energy Technology Data Exchange (ETDEWEB)

The method of double microwave--radio-frequency resonance has been used to obtain spectra of the 2/sub 11/reverse arrow2/sub 12/ and 3/sub 21/reverse arrow3/sub 22/ transitions in HCOOD, DCOOH, and HCOOH molecules. The constants of the quadrupole bond of the deuterons have been determined, magnetic interactions being taken into acocunt. A comparison with results of previous studies is given.

Energy Technology Data Exchange (ETDEWEB)

This book presents the current knowledge about the effects of electromagnetic fields on living matter. The three-part format covers dielectric permittivity and electrical conductivity of biological materials; effects of direct current and low frequency fields; and effects of radio frequency (including microwave) fields. The parts are designed to be consulted independently or in sequence, depending upon the needs of the reader. Useful appendixes on measurement units and safety standards are also included.

Energy Technology Data Exchange (ETDEWEB)

Radio frequency (RF) plasma nitriding using different input plasma processing powers (250-600 W) improves the surface of titanium by forming hard phases of TiN, Ti{sub 2}N, and Ti (N) into the surface. The characteristics of the compound layer have been investigated by optical microscopy, microhardness measurements, and X-ray diffraction. The effect of plasma power on the sample temperature, electron temperature, and plasma density was studied using Langmuir double probe. The measured surface hardness value of the compound layer is 2190 HV 0.1 for treated sample at plasma power 500 W. The compound thickness continuously increases as the plasma power increases. The highest nitriding rate of 5.88 {mu}m{sup 2}/s was recorded when the input plasma power was adjusted at 550 W. This high nitriding rate of treated titanium samples is ascribed to the high concentration of active nitrogen species in the plasma atmosphere and the formed microcracks near ...

Energy Technology Data Exchange (ETDEWEB)

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively coupled RF plasma source ...

Energy Technology Data Exchange (ETDEWEB)

Recent developments in solid-state radio frequency (RF) power technologies allow for the practical consideration of RF heated plasmas for space propulsion. These technologies permit the use of any electrical power source, de-couple the power and propellant sources, and allow for the effcient use of both the propellant mass and power. Effcient use of the propellant is obtained by expelling the rocket exhaust at the highest possible velocity, which can be orders of magnitude higher than those achieved in chemical rockets. Handling the hot plasma exhaust requires the use of magnetic nozzles, and the basic physics of ion detachment from the magnetic eld is discussed. The plasma can be generated by RF using helicon waves to heat electrons. Further direct heating of the ions helps to reduce the line radiation losses, and the magnetic geometry is tailored to allow ion cyclotron resonance heating. RF eld and ion trajectory calculations are presented to ...

Energy Technology Data Exchange (ETDEWEB)

Using a 47 GeV electron beam, the Final Focus Test Beam (FFTB) produces vertical spot sizes around 70 nm. These small beam sizes introduce an excellent opportunity to develop and test high resolution Radio Frequency Beam Position Monitors (RF-BPMs). These BPMs are designed to measure pulse to pulse beam motion (jitter) at a theoretical resolution of approximately 1 nm. The beam induces a TM{sub 110} mode with an amplitude linearly proportional to its charge and displacement from the BPM's (cylindrical cavity) axis. The C-band (5,712 MHz) TM{sub 110} signal is processed and converted into beam position for use by the Stanford Linear Collider (SLC) control system. Presented are the experimental procedures, acquisition, and analysis of data demonstrating resolution of jitter near 25 nm. With the design of future e{sup +}e{sup -} linear colliders requiring spot sizes close to 3 nm, understanding and developing RF-BPMs will be essential in ...

Energy Technology Data Exchange (ETDEWEB)

A method for conditioning electron beams is proposed, making use of the TM{sub 210} mode of microwave cavities, to reduce the axial velocity spread within the beam, in order to enhance gain in resonant electron beam devices, such as the free-electron laser (FEL). Effectively, a conditioner removes the restriction on beam emittance. The conditioner is analyzed using a simple model for beam transport and ideal RF cavities. Analysis of an FEL is employed to evaluate performance with reduced axial velocity spread. Examples of FELs are presented showing the distinct advantage of conditioning.

International Nuclear Information System (INIS)

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

British Library Electronic Table of Contents (United Kingdom)

Doped ultrafine silicon dioxide powder with a narrow particle size distribution was obtained by RF discharge-stimulated dichlorosilane (SiH2C) oxidation at a low pressure using isobutylene as the combustion inhibitor and chromium hexacarbonyl (Cr(CO)6) as the dopant. The formation and morphology of the ultrafine particles are governed by the parameters of the RF discharge and by the chemical mechanism of the combustion reaction yielding the aerosol. Submicron-sized filamentous carbon structures can be obtained by isobutylene decomposition under spark discharge conditions in the presence of a molybdenum metal catalyst.

British Library Electronic Table of Contents (United Kingdom)

A method to achieve NMR of dilute samples in the earth's magnetic field by applying para-hydrogen induced polarization is presented. Maximum achievable polarization enhancements were calculated by numerically simulating the experiment and compared to the experimental results and to the thermal equilibrium in the earth's magnetic field. Simultaneous 19F and 1H NMR detection on a sub-milliliter sample of a fluorinated alkyne at millimolar concentration (1018 nuclear spins) was realized with just one single scan. A highly resolved spectrum with a signal/noise ratio higher than 50:1 was obtained without using an auxiliary magnet or any form of radio frequency shielding.

Energy Technology Data Exchange (ETDEWEB)

The requirements for transporting high-current, negative-ion beams are presented with particular emphasis on applications involving negative-hydrogen-ion beams. In addition to the usual matching and steering problems, particular attention must be paid to beam emittance growth in the transport system. Depending on the application, a number of approaches have been developed using both magnetic and electric lenses. I discuss the design considerations for transporting and matching these beams to radio-frequency quadrupole accelerators, and present a survey of the various types of beamlines now used for negative-ion beams.

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

International Nuclear Information System (INIS)

(Dec 1973). United States Tausch, HJ Antinone, RJ Bailey, RA Air Force

Energy Technology Data Exchange (ETDEWEB)

We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

Energy Technology Data Exchange (ETDEWEB)

Increase in power utility loads in industrialized countries, as well as developing countries, demands a higher level of transmission line voltage. Radio interference (RI) problems have been determined to be a limiting factor in selecting the size of transmission line conductors. Transmission line noise is primarily caused by corona discharges in the immediate vicinity of the conductor. It has been observed that discharges occur during both half-cycles of the applied voltage, but positive corona is usually predominant at AM radio frequencies range with practical high-voltage and extra high-voltage transmission lines. The corona radio noise effect is highly dependent upon the presence of particles on the surface of the conductor and the increase of the electrical gradient beyond the breakdown value of the air. Therefore, corona radio noise varies significantly with the weather and atmospheric conditions and generally increases by 10 to 30 dB in ...

British Library Electronic Table of Contents (United Kingdom)

In this study structural and magnetic character of the expanded austenite phase (gN) layer formed on a medical grade CoCrMo alloy by a low-pressure Radio-Frequency plasma nitriding process was investigated. The formation of the expanded austenite phase is facilitated at a substrate temperature near 400^oC for 1, 2, 4, 6 and 20h under a gas mixture of 60% N2-40% H2. The magnetic state of the gN layers was determined by a surface sensitive technique, magneto-optic Kerr effect (MOKE), and with a scanning probe microscope in magnetic force mode (MFM). Strong evidence for the ferromagnetic nature of the gN-(Co,Cr,Mo) phase is provided by the observation of stripe domain structures and the hysteresis loops. The ferromagnetic state for the gN phase observed here is mainly linked to large lattice ...

Energy Technology Data Exchange (ETDEWEB)

An apparatus for non-invasively inspecting an object, such as an item of luggage, for explosives material is described. It comprises a multi-channel thermal neutron inspection system having a plurality of neutron irradiation chambers. Simultaneous operation of several channels increases the maximum system throughput several times. Each chamber has a lithium neutron source which is stimulated to neutron production by a proton beam. Beam switching magnets are energised by pulsing to divert a common proton beam to each source in turn. The initial beam is generated by a radio frequency quadrupole accelerator. The advantages of this system are very low residual source activity and controllable neutron production thereby minimising safety hazards. The irradiation chamber may contain several different gamma ray detectors to identify the elements present in explosives material. In addition, a neutron radiography imaging means may be employed to ...

International Nuclear Information System (INIS)

A 20-MeV proton accelerator is developed by Proton Engineering Frontier Project (PEFP) at Korea Atomic Energy Research Institute (KAERI). The 20MeV accelerator consists of 50keV proton injector, 3MeV RFQ (Radio frequency Quadrupole), 20MeV DTL (Drift Tube Linac) and 20MeV beam line. The beam profile was measured at the end of the 20MeV beam line with wire scanner. Moreover the beam emittance was calculated from the quad scan method using beam line quadrupole magnets. In this paper, the beam profile measurement results are presented and the emittance measurement from the quad scan method is discussed

International Nuclear Information System (INIS)

Austenitic stainless steel AISI 304 has been nitrided by radio frequency (rf) plasma containing various nitrogen-hydrogen gas mixtures, in order to study the effect of hydrogen on structure and magnetic properties of the formed compound layer. The thermal temperature has been measured at the vicinity of the samples. The compound layer thus produced has been characterized using, X-ray diffractometer and vibration sample magnetometer. Providing the total pressure of nitrogen and hydrogen is held constant, the addition of hydrogen up to 50% gives new structural phases. The magnetization values of the plasma treated samples are strongly dependent on the percentage of H_2 in the gas phase. An excessive amount of hydrogen (#approx#75%) on the other hand, retards the nitriding process. The surface temperature of the sample and plasma condition is crucial factors for nitriding process.

Energy Technology Data Exchange (ETDEWEB)

Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

Science.gov (United States)

A dc-to-dc converter has been designed which employs the synchronizing phenomenon in the transistor core multivibrator. In the proposed circuit, the voltage feedback is applied from the control transistor and the current feedback is applied from the main transistor. The operation of the converter is analyzed by the averaging method of the state space technique. The converter features small switching loss and is suitable for high frequency operation. An efficiency of more than 95% is obtained for 5 V, 3 A output at a switching frequency of 200 kHz.

Energy Technology Data Exchange (ETDEWEB)

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.

International Nuclear Information System (INIS)

SGS-Thomson and CNES significantly hardened a power MOSFET transistor against heavy ions and cobalt 60 total dose. The influence of the major technological steps on the component radiation sensitivity has been analyzed. Then the optimization has been carried out, using booth computerized simulation and experimental data. (D.L.). 5 refs., 8 figs.

Energy Technology Data Exchange (ETDEWEB)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO{sub 2} layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate ...

Science.gov (United States)

We investigate the features of the spontaneous emission spectra in a coherently driven cold five-level atomic system by means of a radio frequency (rf) or microwave field driving a hyperfine transition within the ground state. It is shown that a few interesting phenomena such as spectral-line narrowing, spectral-line enhancement, spectral-line suppression, and spontaneous emission quenching can be realized by modulating the frequency and intensity of the rf-driving field in our system. In the dressed-state picture of the coupling and rf-driving fields, we find that this coherently driven atomic system has three close-lying levels so that multiple spontaneously generated coherence (SGC) arises. Our considered atomic model can be found in real atoms, such as rubidium or sodium, so a corresponding experiment can be done to observe the expected phenomena related to SGC reported by Fountoulakis et al. [Phys. Rev. A 73, 033811 (2006)], since no ...

CERN Document Server

Measurement of redshifted 21-cm emission from neutral hydrogen promises to be the most effective method for studying the reionisation history of hydrogen and, indirectly, the first galaxies. These studies will be limited not by raw sensitivity to the signal, but rather, by bright foreground radiation from Galactic and extragalactic radio sources and the Galactic continuum. In addition, leakage due to gain errors and non-ideal feeds conspire to further contaminate low-frequency radio obsevations. This leakage leads to a portion of the complex linear polarisation signal finding its way into Stokes I, and inhibits the detection of the non-polarised cosmological signal from the epoch of reionisation. In this work, we show that rotation measure synthesis can be used to recover the signature of cosmic hydrogen reionisation in the presence of contamination by polarised foregrounds. To achieve this, we apply the rotation measure synthesis technique to the Stokes I component of a synthetic data ...

Energy Technology Data Exchange (ETDEWEB)

A versatile, high brightness, volume type, low power RF source, capable of producing positive ion beams with intensities as high as 1 mA from gaseous feed materials and microamperes of negative ion beams has been characterized. The source can also be operated as a plasma sputter negative ion source to generate up to 1 mA of a selected species. The performance of the source in the positive and negative volume modes of operation can be greatly enhanced by addition of a removable, water cooled filament assembly in place of the negative sputter probe. For examine, the material utilization efficiencies of gaseous feed species can be more than doubled, total current intensities increased up to 40%, molecular dissociation fractions increased by 20% and minimum operating pressures reduced by a factor of four when operated in the volume mode. These added electrons also favorably effect, as a consequence of lower pressures, the emittance apparently through a reduction of scattering in the beam ...

Energy Technology Data Exchange (ETDEWEB)

A radio frequency sputtering apparatus with a pair of targets has been developed for depositing a film of uniform thickness onto a complex-geometric specimen such as the retainer of a ball bearing. The deposition characteristics of the apparatus were compared with those of the conventional sputtering apparatus. Lubrication properties of MoS/sub 2/ films made by these devices were also compared under a variety of conditions. Finally, friction and wear of MoS/sub 2/ films applied to angular-contact type ball bearings of 20 mm bore were studied in air, nitrogen and vacuo. The two-target sputtering has an advantage mentioned above. However, the films deposited by the method exhibited a rather short wear life because of the temperature rise of the substrate during ion bombardment and during the sputtering process. This temperature dependence was observed in films on those substrates that had been heated with a built-in heater during sputtering. The ...

International Nuclear Information System (INIS)

The study of the scrape-off layer (SOL) during Alfven wave heating may lead to a better understanding of the antenna-plasma interaction. The scrape-off layer of the TCA tokamak has been widely investigated by means of Langmuir probes. The aim of this work is to present measurements on the influence of the Alfven wave spectrum on the scrape-off layer. These experiments have shown that the plasma boundary layer is strongly affected by the wave field, in particular the ion saturation current and the floating potential. In TCA, as the spectrum evolves due to a density rise, the passage of the Alfven continua and their associated eigenmodes, the Discrete Alfven Wave (DAW) induces a strong depletion in the edge density of up to 70% during the continuum part and a density increase during the crossing of an eigenmode. The floating potential becomes negative during the continua and even more negative crossing the eigenmodes. In case of MHD mode activity, this behaviour changes for power ...

Energy Technology Data Exchange (ETDEWEB)

The Green-Chasman lattice, which is the basis for both NSLS storage rings, was conceived with insertion devices in mind. Long, field-free straight sections were provided in the design. The electron optics were chosen so that these sections had zero dispersion and the effects of new magnetic structures placed in these regions would have minimal effect on the emittance of the electron beam. This design concept has been followed by all high-brightness rings which were built subsequent to the NSLS. The X-Ray Ring straight sections also have a very small vertical {beta} function, in addition to the zero dispersion. This was done to optimize the brightness of wiggler sources. There is a further benefit however. The {beta} function determines the beam size and divergence at a particular point in the storage ring lattice. The size is proportional to {radical}{beta} and the divergence is proportional to 1/{radical}{beta}. Thus the electron beam is very small at the center of the X-Ray Ring ...

Energy Technology Data Exchange (ETDEWEB)

45{number_sign} steel, which has good mechanical strength and is relatively cheap, is a common constituent in industrial components, such as precision gears, piston columns of oil pumps, and so on. However, since the working environment of these industrial parts is sometimes quite harsh and unforgiving, they are vulnerable to wear and corrosion. Replacing 45{number_sign} steel with stainless or alloy steel increases the cost significant, and a better alternative is to improve its surface properties and lifetime using plasma immersion ion implantation (PIII). The authors have devised a variety of treatment processes using PIII, including radio-frequency (RF) plasma nitriding, RF plasma nitriding and nitrogen PIII, Ti deposition in conjunction with nitrogen PIII (IBED), as well as Cr deposition followed by nitrogen PIII (IBED). To assess the efficacy of the processes, the microhardness and mass loss due to wear were measured for both the untreated and treated ...

Energy Technology Data Exchange (ETDEWEB)

Studies have been conducted to determine the feasibility of using collisional cooling for reducing emittances and energy spreads in negative-ion beams to levels commensurate with effective isobaric purification with conventional high-resolution electromagnetic isobar separators as required for use at the Holifield Radioactive Ion Beam Facility (HRIBF). We have designed a gas-filled radio frequency quadrupole ion cooler equipped with provisions for retarding energetic negative-ion beams to energies below thresholds for electron detachment at injection and for re-acceleration to initial energies after the cooling process. The device has been used to cool several ion beams with initial energy spreads, {delta}E>10 eV to final energy spreads, {delta}E{approx}2 eV FWHM, including O{sup -} and F{sup -}. Overall transmission efficiencies of {approx}14% for F{sup -} beams have been obtained. Experimental results show that electron detachment is ...

Energy Technology Data Exchange (ETDEWEB)

The goal of this LDRD was to demonstrate the use of robotic vehicles for deploying and autonomously reconfiguring seismic and acoustic sensor arrays with high (centimeter) accuracy to obtain enhancement of our capability to locate and characterize remote targets. The capability to accurately place sensors and then retrieve and reconfigure them allows sensors to be placed in phased arrays in an initial monitoring configuration and then to be reconfigured in an array tuned to the specific frequencies and directions of the selected target. This report reviews the findings and accomplishments achieved during this three-year project. This project successfully demonstrated autonomous deployment and retrieval of a payload package with an accuracy of a few centimeters using differential global positioning system (GPS) signals. It developed an autonomous, multisensor, temporally aligned, radio-frequency communication and signal processing capability, and an array ...

International Nuclear Information System (INIS)

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.

Energy Technology Data Exchange (ETDEWEB)

Various energy sources and motors of divers types can be used in electric cars with operating modes subjected to a number of particular constraints. As a result, the possible structures of the converters, that are analysed in detail, are about a dozen in number. Also considered is the use of solid-state components - thyristors, power transistors and new components.

International Nuclear Information System (INIS)

The theoretical hardness against total dose of the six-transistor SRAM cell is investigated in detail. An explicit analytical expression of the maximum tolerable threshold voltage shift is derived for two cross-coupled inverters. A numerical method is used to explore the hardness of the read and write operations. Both N- and P-channel access transistors designs are considered and their respective advantages are compared. The study points out that the radiation hardness mainly relies on the technology. Results obtained with the very robust Gate-All-Around process are finally presented.

Energy Technology Data Exchange (ETDEWEB)

Ultra High Vacuum (UHV) test setup for electron gun testing has been developed. The development of next generation light sources and accelerators require development of klystron as a radio frequency power source, and in turn electron gun. This UHV electron gun test setup can be used to test the electron guns ranging from high average current, quasi-continuous wave to high peak current, single pulse etc. An electron gun has been designed, fabricated, assembled and tested for insulation up to 80 kV under the programme to develop high power klystron for future accelerators. Further testing includes the electron emission parameters characterization of the cathode, as it determines the development of a reliable and efficient electron gun with high electron emission current and high life time as well. This needs a clean ultra high vacuum to study these parameters particularly at high emission current. The cathode emission current, work function and ...

Energy Technology Data Exchange (ETDEWEB)

Ketamine-anesthetized Sprague-Dawley rats were exposed in H orientation to far-field 9.3-GHz continuous-wave (CW) and pulsed (2 microseconds 500 pps) radiofrequency radiation (RFR) at average power densities of 30 and 60 mW/sq. cm (whole-body average specific absorption rates of 9.3 and 18.6 W/kg, respectively). Irradiation was conducted to cyclicly increase colonic temperature from 38.5 to 39.5 C. Colonic, tympanic, and subcutaneous temperatures, ECG, blood pressure, and respiratory rate were continuously recorded during experimentation. At both power densities, the subcutaneous and tympanic temperature increases significantly exceeded the colonic temperature increase. At both exposure levels, heart rate increased significantly during irradiation and returned to baseline when exposure was discontinued. Blood pressure and respiratory rate did not significantly change during irradiation. There were no significant differences between the effects of CW and pulsed RFR exposure. The levels ...

International Nuclear Information System (INIS)

Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF_4) and acetylene (C_2H_2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF_4/(CF_4+C_2H_2). The samples were annealed at 300 deg. C for 30 min. in a N_2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF_4 flow ratio (R=0.97) produced more sp"3 linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 #mu#s and an energy gap of #approx#2.75 eV were observed in both the as-deposited and after annealing conditions. The short ...

International Nuclear Information System (INIS)

Radio frequency (RF) sheaths are suspected of limiting the performance of present-day ion cyclotron range of frequencies (ICRFs) antennas over long pulses and should be minimized in future fusion devices. Within the simplest models, RF-sheath effects are quantified by the integral VRF = ? E|| ? dl where the parallel RF field E|| is linked with the slow wave. On 'long open field lines' with large toroidal extension on both sides of the antenna it was shown that VRF is excited by parallel RF currents j|| flowing on the antenna structure. In this paper, the validity of this simple sheath theory is tested experimentally on the Tore Supra (TS) ITER-like antenna prototype (ILP), together with antenna simulation and post-processing codes developed to compute VRF. The predicted poloidal localization of high-|VRF| zones is confronted to that inferred from experimental data analysis. Surface temperature distribution on ILP front face, as well as ...

International Nuclear Information System (INIS)

The operation and proper handling of equipment for measuring EMR-300 electromagnetic waves are studied and apply that knowledge to determine which areas of the metropolitan area are mostly affected by exposure to the emission of radiation. This team is able to measure magnetic field strength, electric field strength and power density, also can measure the most important parameters in a simple manner. International standards provide maximum values for these parameters that limit human exposure to such radiation. These standards are based on epidemiological several and laboratory that have been carried out in order to determine in which circumstances a biological entity is exposed to a level of radiation that can cause harm to their health. It focuses on measuring the level of radiation in certain areas of interest, which were chosen because are areas with high population density and also in proximity to antennas that emit electromagnetic waves. Before carrying out the data collection ...

Energy Technology Data Exchange (ETDEWEB)

The research for the development of flexible organic electronic devices (FEDs) is rapidly increasing worldwide, since FEDs will change radically several aspects of everyday life. Although there has been considerable progress in the area of flexible inorganic devices (a-Si or solution processed Si), there are numerous advances in the organic (semiconducting, conducting and insulating), inorganic and hybrid (organic-inorganic) materials that exhibit customized properties and stability, and in the synthesis and preparation methods, which are characterized by a significant amount of multidisciplinary efforts. Furthermore, the development and encapsulation of organic electronic devices onto flexible polymeric substrates by large-scale and low-cost roll-to-roll production processes will allow their market implementation in numerous application areas, including displays, lighting, photovoltaics, radio-frequency identification circuitry and chemical sensors, as well as to ...

Energy Technology Data Exchange (ETDEWEB)

Copper coatings deposited on Al-6061 substrates by radio frequency magnetron sputtering, to prevent the retention and permeation of energetically implanted tritium in Al-6061, were evaluated by a variety of characterization techniques. The coatings, weighing in the 0.03 to 0.088 kg/m{sup 2} range, were smooth and had a fine grain structure. They contained the intermetallic phases Cu{sub 9}Al{sub 4} and CuAl{sub 2} as well as copper. The fractions of Al and Cu in any coating increased and decreased, respectively, with increasing depth below the surface. Furthermore, the fractions of Al and Cu on the coating surface decreased and increased, respectively, with increasing coating weight. There was no texture or preferred orientation in the Cu phase of the coatings. A significant amount of oxygen was also detected at the original substrate surface. Residual stress measurements revealed that, in both Cu and CuAl{sub 2}, the stresses in the coating ...

Energy Technology Data Exchange (ETDEWEB)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped Thin Film ...

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ...

Energy Technology Data Exchange (ETDEWEB)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

British Library Electronic Table of Contents (United Kingdom)

Microcrystalline-Si thin-film transistors (?C-Si TFTs) formed by using the source/drain contact electrode of self-aligned palladium silicide have been investigated. Both the self-aligned palladium silicided scheme and the previous top-gate staggered structure employ two-mask process steps for fabricating ?C-Si TFTs. However, the self-aligned palladium silicided scheme would cause better device characteristics than the top-gate staggered structure, primarily due to more carrier tunneling. For a gate length of 2 ?m, as compared to the top-gate staggered scheme, this silicided scheme can result in a 40% improvement of on-state current. In addition, as the gate length is reduced to 1 ?m, considerable short-channel effect is caused for both the device schemes.

British Library Electronic Table of Contents (United Kingdom)

We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm2V?1s?1, normalized transconductances of 0.78 Sm?1, and on/off current ratios of 106. Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabri...

British Library Electronic Table of Contents (United Kingdom)

This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

International Nuclear Information System (INIS)

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 #mu#m. (author).

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

Science.gov (United States)

The visible absorption spectra of 1,4-(dihydroxy)-9,10-anthraquinone and of Co(II), Ni(II), Cu(II) and Zn(II) chelates have been studied in different organic solvents. This system provides a model for the anthracycline antibiotics and their metal chelates. The band structure of the spectrum has been determined using the second and fourth derivatives of the spectrum. The visible absorption band of the parent molecule can be assigned to a single electronic state with a reduced dipole moment in the excited state; structure in this band is ascribed to two overlapping vibrational progressions. In contrast, the dianion (hydroxy protons removed) shows a single electronic state with an increased dipole moment in the excited state; structure in this band can be assigned to a single vibrational progression. All of the metal chelates show spectra which are similar in appearance to that of the dianion although the ...

International Nuclear Information System (INIS)

A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.

British Library Electronic Table of Contents (United Kingdom)

Executive summaryForewordPublic awareness of solid-state chemistry, or more broadly solid-state science and technology rapidly grew along with the transistor revolution and the development of the integrated circuit. We are now at the half-way point in the solid state century [Scientific American The Solid-State Century 1997;8(1) [special issue

International Nuclear Information System (INIS)

The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

Energy Technology Data Exchange (ETDEWEB)

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10{sup -5} bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of {epsilon} and {gamma}' nitrides in the compound layer, with a preferential formation of {gamma}' at the expense of the {alpha}-phase at the ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe how this concept ...

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that our electrical ...

Energy Technology Data Exchange (ETDEWEB)

A non-synthetic polymer material, polyterpenol, was fabricated using a dry polymerization process namely RF plasma polymerization from an environmentally friendly monomer and its surface, optical and electrical properties investigated. Polyterpenol films were found to be transparent over the visible wavelength range, with a smooth surface with an average roughness of less than 0.4 nm and hardness of 0.4 GPa. The dielectric constant of 3.4 for polyterpenol was higher than that of the conventional polymer materials used in the organic electronic devices. The non-synthetic polymer material was then implemented as a surface modification of the gate insulator in field effect transistor (OFET) and the properties of the device were examined. In comparison to the similar device without the polymer insulating layer, the polyterpenol based OFET device showed significant improvements. The addition of the polyterpenol interlayer in the OFET shifted the threshold voltage ...

International Nuclear Information System (INIS)

III--V based devices such as field effect transistors, heterojunction bipolar transistors, and lasers often have surface leakage and thermal degradation problems due to surface states which pin the Fermi level to the midgap. Sulfur based passivation processes are known to improve device performance by altering surface-state densities. We have developed a voltage-controlled anodic sulfur passivation scheme using Na_2S dissolved in ethylene glycol. Our process has repeatedly produced a #approx#25% improvement in peak output power near the catastrophic damage limit in visible (#lambda#=670 nm) AlGaInP edge-emitting lasers. The threshold current density before and after passivation, and the I--V characteristics before and after catastrophic failure, were essentially unchanged indicating that passivation raises the threshold for facet damage.

International Nuclear Information System (INIS)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted in ...

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Energy Technology Data Exchange (ETDEWEB)

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 [mu]m radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. In this paper the effects of different device terminal DC biases and channel geometries on the noise are described.

Energy Technology Data Exchange (ETDEWEB)

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced from {approx}10{sup 6} before aging. Therefore, the enhanced long-term stability of ...

International Nuclear Information System (INIS)

Measurements have been made of certain parameters relevant to the operation of electron-counting detectors. An experimental chamber consisting of a uniform-field drift tube and a coaxial proportional counter thas been employed to obtain data, at very low drift fields (E/p<0.02 V/cm Torr), on electron mobility and lifetimes in a range of gas mixtures. These mixtures included argon, methane, nitrogen and carbon dioxide. Measurements of single-electron spectra showed that, unexpectedly for the standard gas mixtures employed, useful departure from an exponential spectrum was not possible without the production of cathode secondaries. Although the present studies employed only the counter electrical signal the information obtained should be directly relevant to the operation of practical light-pulse systems. Examples of electron-counting spectra for soft X-rays are shown. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10[sup -15] cm[sup 2] in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, the emission factors for negative-ion beam are found to be larger by 1 than those for positive-ion beams. (author).

International Nuclear Information System (INIS)

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the ...

International Nuclear Information System (INIS)

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

Science.gov (United States)

An analysis is made of the basic principles and methods of construction of integrated optical circuits (IOC) for data processing, which are optical waveguide processors in the integrated form. A classification is provided of IOC in accordance with the nature of the input connections to optical components and in accordance with their intended function. An analysis is made of the current status of research and development of analog IOC for handling analog and digital signals, IOC for computing technology, and switching IOC. A detailed analysis is made of IOC with different functions in data processing: spectrum analyzers and correlators, analog-digital converters, circuits for identification of data sets and for encoding of signals, threshold and multistable circuits, logic and arithmetic units, and switching arrays. Descriptions are given of IOC for optically controlled data handling: bistable purely optical logic circuits, multivibrators, flip-flops, and optical ...

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

CERN Document Server

Logic Programming languages and combinational circuit synthesis tools share a common "combinatorial search over logic formulae" background. This paper attempts to reconnect the two fields with a fresh look at Prolog encodings for the combinatorial objects involved in circuit synthesis. While benefiting from Prolog's fast unification algorithm and built-in backtracking mechanism, efficiency of our search algorithm is ensured by using parallel bitstring operations together with logic variable equality propagation, as a mapping mechanism from primary inputs to the leaves of candidate Leaf-DAGs implementing a combinational circuit specification. After an exhaustive expressiveness comparison of various minimal libraries, a surprising first-runner, Strict Boolean Inequality "<" together with constant function "1" also turns out to have small transistor-count implementations, competitive to NAND-only or NOR-only libraries. As a practical outcome, a more realistic ...

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to ...

Energy Technology Data Exchange (ETDEWEB)

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field-effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa-peri-hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from {sup 1}H NMR and 2D wide-angle X-ray scattering (2D WAXS) experiments that the sterically demanding 9,9-dioctylfluorene groups are preventing {pi}-{pi} intermolecular contact in the hexakis-substituted FHBC 4. For bis-substituted FHBC compounds 5 and 6, {pi}-{pi} intermolecular ...

Energy Technology Data Exchange (ETDEWEB)

In order to optimize the performance of molecular organic electronic devices it is important to study the intermolecular density of states and charge transport mechanisms in the environment of crystalline organic material. Using this approach in Field Effect Transistors (FETs) we show that material purification improves carrier mobility and decreases density of the deep localized electronic state. We also report a general exponential energy dependence of the density of localized states in a vicinity of the mobility edge (Fermi energies up to approx7 times higher than the thermal energy (kT)) in a variety of the extensively purified molecular organic crystal FETs. This observation and the low activation energy of the order of approxkT suggest that molecular structural misplacements of the sizes that are comparable with thermal molecular modes rather than impurity deep traps play a role in formation of these shallow states. We find that the charge carrier mobility in ...

Science.gov (United States)

The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method provides a new avenue ...

Energy Technology Data Exchange (ETDEWEB)

Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over conventional detectors. Detector fabrication procedures, I-V and C-V ...

International Nuclear Information System (INIS)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD technique over standard ion ...

CERN Document Server

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray fluorescence (SR-TXRF) ...

British Library Electronic Table of Contents (United Kingdom)

The preS2 antigens of hepatitis B virus (HBV), which causes a serious health problem in the world, have been implicated in hepatocyte cell binding and viral penetration. Therefore, the importance of antibody production against preS2 antigen for early diagnosis of HBV has been well established. In this study, the recombinant HBV preS2 single chain variable fragment (scFv) antibody was successfully expressed in E. coli with the novel cold shock vector (pCold) under the cspA promoter, and its expression level was compared with the pET vector under the T7 promoter. Additionally, a host with an oxidizing cytoplasm, E. coli trxB/gor double mutant, was used to improve the soluble expression. The anti-HBV preS2 scFv using pCold vector was successfully expressed in a soluble and functional form in ...

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle annealing. Measurements of the plasma ion ...

International Nuclear Information System (INIS)

In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were ...

International Nuclear Information System (INIS)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application requires the scaling down ...

ScienceCinema

...and welcome to ...lab also known as berkeley lab my name is jeff miller and ...and a public affairs i'd like to ? ...but space is science center and ...berkeley albany high school science department and berkeley high school science department and oakland high school science ...be a q. and ...here please use and because we wanna make sure that your questions are here ...heard of also for the latest developments on science and technology ...guy we're going to be any more and more new features i hope ...and change ...thank you ? much and thank you for coming on the welcome to my world of and mayotte science journalist and what i've done for the last almost thirty years ...people about things about which there passionate and national religion tonight and ...people to explain the science and and i asking the question so what ...and ...worldwide and what it does best ? uh ...bench science and turn it into reality what do you scientists and ...uh they take scientific theory and they turn ...