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... defects doped materials germanium infrared radiation monocrystals neutron

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The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological ...

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The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

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The condition for obtaining a calorimetric response linear with energy for hadronic showers and an energy resolution that improves as the incident energy increases is the equalization of the electromagnetic (e) and the hadronic (#pi#) signal responses. This equalization is obtained by exploiting a local hardening effect realized through the insertion of low-Z thin plates between the high-Z absorbers and the active material in a hadronic calorimeter with silicon readout. This effect, which allows the reduction of the calorimeter response to the electromagnetic component of the incoming hadronic showers, has been investigated for different low-Z materials. The relevance of some aspects of this study to the radiation hardness of the calorimeters is also addressed. (orig.).

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A formula is obtained which describes the kinetics of low-temperature radiation hardening caused by creation of dislocation loops of interstitial type during irradiation. The radiation hardening of aluminum and vanadium is estimated using this formula and results of experiments on studying processes of nucleation and growth of interstitial dislocation loops in these materials by transparent electron microscopy. It is shown that the proposed formula is valid for description of the kinetics of low-temperature radiation hardening.

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Results on defect structure study and degree of molybdenum radiation hardening irradiated by fission neutrons and medium energy alpha-particles are presented. It is shown that molybdenum irradiation by alpha-particles and neutrons leads to different degree of material hardening for the same damage level. It is established that molybdenum radiation hardening is mainly defined by radiation defect clusters visible in electron microscope whose coefficient of rigidity depends on their size. 5 refs.; 6 figs.; 2 tabs. (author).

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A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.

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Experimental results on study of helium concentration influence on degree of molybdenum radiation hardening for various method of cyclotron doping differing in degree and damage character are presented. It is established that accumulation of helium atoms in molybdenum for simultaneous formation of radiation defects caused by low energetic primary-knocked atoms leads to higher degree of hardening than for high energetic ion irradiation. It is shown that with increase of helium atom concentration the degree of radiation hardening for the same level of damage increases. 4 refs.; 3 figs. (author).

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(Dec 1971). United States Olson, RJ Alexander, DR Antinone, RJ Durham,

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A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

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Titanium base 'alpha'-alloys (Pt-7M, RK-20 and Ti-5Al-2Zr-1.5V) are considered for their behaviour under neutron irradiation. The role of alloying elements in radiation hardening is discussed depending of neutron fluence and irradiation temperature. For PK-20 alloy three stages of change in mechanical properties are revealed which are following: incubation period and weak hardening, intense radiation hardening, radiation hardening attenuation. Irradiation temperature rise results in an increase of incubation period and threshold neutron fluence. A special attention is paid to hydrogen absorption in #alpha#-titanium alloys under irradiation. It is concluded that titanium base 'alpha'-alloys are serviceable as structural materials in nuclear plants with allowance made for peculiar features of their radiation behaviour. 4 ...

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This paper reviews various techniques to harden Charged Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with "6"0Co or X-ray (10 keV) sources on devices in operating mode. (author). 3 refs., 8 figs.

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The notion of hardened systems can be found in several applications (nuclear power plants, alarm systems, research installations..). Their development correspond to the functional necessity to take into account a specific radiative environment. The starting point of each hardening study is the definition of the radiative environmental constraints representative of the application. In addition to these external constraints, the specific functional characteristics of each system are considered: control or interface systems in nuclear industry, in-board control systems, remote handling systems, etc. This paper summarizes the methodology followed according to the experience gained in previous studies and anticipating the future needs. (J.S.). 6 refs., 5 figs.

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Mechanical properties of vanadium, irradiated with fast neutrons up to 8.6x10"-"4 dpa depending on postirradiation annealing temperature, are studied. It is shown that radiation-annealing hardening (RAH) is observed at 300 deg C, which agrees with earlier performed studies. It is first stated that RAH is accompanied by plasticity decrease. Phenomenological model permitting to explain RAH dependence on irradiation temperature and dose and also on content of chemically active alloying impurities is suggested.

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Space particles act on semiconductor devices by creating charges (electrons, holes) in the silicon and the silicon dioxide, and by creating displacement damage. These primary phenomena alter the electrical parameters of MOS and bipolar devices (threshold voltage V_t, mobility #mu#, conductivity #sigma#, current gain #beta#). The dose rate is not important in space (a few rad (Si)/h) but as the durations of space expeditions are on average from seven to twelve years, the total dose is an aggravating factor in the behaviour of the electrical parameters and also in device operation. The total dose effect from the beginning of charge creation (ionization) to the parameter shifts is reviewed. One can note that this effect is permanent because there will almost always be charge creation in space. Another important phenomenon is called the Single Event Upset (S.E.U.) and caused by the heavy ions and the protons which come from the galactic rays. The ...

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The introduction of tolerance to radiation (''radiation-hardness'') into large electronic systems is one of the major tasks to which this Handbook will be put. The practices recommended here for inculcating radiation-tolerance in equipment require advanced physical modeling techniques, precise engineering procedures, and firm assurance procedures. The degree to which these procedures should be used in an equipment project can be measured by the severity of the raw radiation environment, the desired reliability of the system, and the requirement of that project for radiation-sensitive technologies. The balance of device/circuit design versus shielding will depend on whether the radiation is highly penetrating -- as in isotope handling or military environments -- or readily attenuated, as in space. In this chapter the authors have attempted to summarize the ...

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By method of transmission electron microscopy and measuring of microhardness the peculiarities of influence of radiation defect clusters on molybdenum radiation hardening along range path of protons with 30 MeV initial energy are studied. Decrease effect of hardening growth value and even its absence depending on irradiation dose in the range of 10-20 MeV proton energies in presence of high density of radiation defect dispersed clusters is revealed. It is shown experimentally that this effect is connected with accumulation of hydrogen up to not very high concentrations (not more than 5x10"-"4 at.%) at the expense of elastic and inelastic proton scattering. 5 refs.; 5 figs.

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Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).

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Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation ...

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An overview of the operations of Sandia`s Microelectronics Development Lab (MDL) is to develop radiation hardened IC, but techniques used for IC processing have been applied to a variety of related technologies such as micromechanics, smart sensors, and packaging.

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The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 [mu]m radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. In this paper the effects of different device terminal DC biases and channel geometries on the noise are described.

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Full text of publication follows: Radiation hardening and embrittlement due to high-energy neutron radiation around 623 K are the important issues on reduced-activation ferritic/martensitic (RAF/M) steels. It is expected that the improvement of radiation hardening might be one of effective ways to control the mechanical properties of RAF/M after irradiation. It has been reported that the weld joint has less hardening than the base metal from the tensile test results of TIG weldments irradiated in HFIR. This report indicated that radiation hardening can be reduced by the optimization of heat treatment condition for F82H. The purposes of this study are to establish the condition of heat treatment for minimum of radiation hardening in F82H steel using Neutron/Ion-irradiation and to ...

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This paper provides a physically-based engineering model to estimate radiation hardening of 9%Cr-steels under both displacement damage (dpa) and helium. The model is essentially based on the dispersed barrier hardening theory and the dynamic re-solution of helium under displacement cascades but incorporating a number of assumptions and simplifications [Trinkaus, J. Nucl. Mater. 318 (2003) 234-340]. As a result, the kinetics of the damage accumulation kept fixed, its amplitude is fitted on one experimental condition. The model was rationalized on an experimental database that mainly consists of 9%Cr-steels irradiated in the range of 50-600degreeC up to 50dpa and with a He-content up to 5000appm. The test temperature effect is taken into account through a normalization procedure based on the...

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Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...

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The first essential before embarking on the radiation-hardening of electrical insulation - mostly magnet coils - in any beam line application is to obtain a reliable estimate of the dose to the components. These are examples ( switchyards at SLAC and LAMPF) where the degree of hardness specified was much higher than was required. Although experience shows that the cost premium for substantial radiation - hardening is of the order of 10%, it has also become clear that well - designed beam line have negligible losses: hardening is required only in the vicinity of targets, collimators or other beam - intercepting devices. Where the beam is deliberately scraped, local shielding will minimize the associated radiation in the surroundings. Electron machines have their own special problems due to synchrotron radiation, so certainly coils and other electrical equipment ...

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The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.

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Process control transmitters that incorporate digital signal processing could be used advantageously in nuclear power plants; however, because such transmitters are too sensitive to radiation, they are not used. The Electric Power Research Institute sponsored work at Sandia National Laboratories under EPRI contract RP2614-58 to determine why SMART transmitters fail when exposed to radiation and to design and demonstrate SMART transmitter circuits that could tolerate radiation. The term ''SMART'' denotes transmitters that contain digital logic. Tests showed that transmitter failure was caused by failure of the complementary metal oxide semiconductors (CMOS)-integrated circuits which are used extensively in commercial transmitters. Radiation-hardened replacements were not available for the radiation-sensitive CMOS circuits. A conceptual design showed that a ...

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Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

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Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

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The determination of residual stress (RS) in case-hardened steel gear truck synchronisers coated with thermal sprayed molybdenum was carried out using neutron and synchrotron X-ray diffraction. Two samples with different coating thicknesses (about 120 ?m and 1.4 mm) and different steel substrates (16MnCr5 and SAE4140, respectively) were investigated. Microanalysis revealed substantial porosity in both samples and some debonding was observed between the thin coating and the substrate. The bulk hardness of the SAE 4140 proved to be much higher than the 16MnCr5 and the surface case-hardening increased it by a further 20%. The full three-dimensional stress depth-profile was determined by neutron diffraction (ND) in both the coatings and the substrates, while synchrotron radiation allowed a dep...

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An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

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The X-ray storage phosphor CsBr:Eu2+ in form of needle image plates is believed to be a promising alternative to the granular BaFBr:Eu2+ with regard to PSL yield and spatial resolution. Unfortunately, CsBr:Eu2+ exhibits poor radiation hardness, which is caused by a migration of europium ions initiated by naturally existing defect centers like (Eu2+-VCs)-centers and X-ray generated MEu-centers. It will be shown that the formation of (Eu2+-O2?)-dipoles at the expense of (Eu2+-VCs)-dipoles, incorporated by thermal annealing in O2-containing and humid atmosphere, does not improve the radiation stability. There is, however, a strong improvement in the radiation hardness by codoping of CsBr:Eu2+ with lithium ions, which is accompanied by a complete suppression of the previously observed MEu-cent...

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Contrary to previous plans for the preparation of diagnostic systems for D-T break-even experiments in the Tokamak Fusion Test Reactor (TFTR), it now appears that a limited Q#approx#1 demonstration can be carried out without constructing a close-fitting igloo radiation shield around the tokamak. In order to assess the impact of D-T operation of TFTR without an igloo shield, particularly with regard to hardening of diagonstic systems, we have mapped neutron and gamma fluxes inside the test cell and test cell basement, using a variety of radiation measurements. The measurements are sufficiently detailed to resolve massive hardware components, such as neutral beams and shielded diagnostic systems, and can be used to predict local fluxes. By comparing the measurements with transport code calculations for the case of a bare tokamak, we conclude that the models have substantially overestimated fluxes both inside and outside the ...

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The radiation polymerization of multifunctional unsaturated polyester-monomer mixtures in wood forms interpenetrating network system. The mechanical resistance (compression, abrasion, hardness, etc.) of these composite materials are generally well over the original wood, however the impact strength is almost the same or even reduced, in comparison to the wood itself. An attempt is made using elastic polyester resins to produced wood-polyester composite materials with improved modulus of elasticity and impact properties. For the impregnation of European beech wood two types of elastic unsaturated polyester resins were used. The exothermic effect of radiation copolymerization of these resins in wood has been measured and the dose rate effects as well as hardening dose was determined. Felxural strength and impact properties were examined. Elastic unsaturated polyester resins improved the impact strength of wood composite ...

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... Accession Number : ADD100229. Title : DEFORMATION BEHAVIOR OF AN OMEGA HARDENED ALPHA-BETA TITANIUM ALLOY,. ...

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Classification and ranking of the solid solution on their reaction to the irradiation is suggested on the basis of binary system structure controlled by mixing enthalpy sign, melting temperatures relation of components and solidus curves slope. Several combinations of these characteristics permit to pick out three groups of substitutional elements capable of forming the vacancy-solute atom complexes either low-mobile or fast-mobile ones as compared to monovacancies migration. The radiation hardening (and embrittlement) of binary alloys should be intensified respectively either due to heterogeneous point defect clusters nucleation on solute traps or due to solute atom clusters/ precipitate formation. A local cohesion decrease may also occur especially if low-melting elements (characterized by low surface energy) are segregating on internal sinks or grain boundaries. The predicted specifics of different alloy group under irradiation and during ...

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Compositions (oligomers with suitable properties and Al, Fe, Cu, Ta, W powders) were hardured by the flux of accelerated electrons at 10 mA beam current and 1.5 MeV energy. Dielectric and mechanical properties of metal-filled polymeric compositions as well as their radioply sicl properties in SHF-range are studied. It is shown that the produced compositions belong tot he absorbing protective materials in which the protection effect is mainly achieved through the absorption losses. 6 refs.; 3 tabs.

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A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B C1.1 base metal irradiated to a dose of 4.84x10"1"8 n/cm"2 at about 380 deg C. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature of 280-305 deg C. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy aggromeration and the annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in ...

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Consideration is given to the data, demonstrating the effect of ion radiation on strength characteristics of ionic crystals, presented by magnesium oxide. Crystals, prepared in the form of plates, were irradiated by Si"+, Fe"+, C"+ ions by the dose of 10"1"6-10"1"7 ion/cm"2 at room temperature in vacuum. The following characteristics were investigated: dislocation density, microhardness, crack resistance. Investigation of dislocation structure showed, that dislocation density in irradiated sample was 2-3 times higher, as compared to nonirradiated one. Sufficient increase of fracture viscosity of MgO crystals was revealed. It can be conditioned by occurrence of compression stresses in the surface layer, decelerating crack formation and propagation.

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Kinetic Monte Carlo (KMC) computer simulations are performed to determine the kinetics of SIA cluster 'clouds' in the vicinity of edge dislocations. The simulations include elastic interactions amongst SIA clusters, and between clusters and dislocations. Results of KMC simulations that describe the formation of 'SIA clouds' during neutron irradiation of bcc Fe and the corresponding evolution kinetics are presented, and the size and spatial distribution of SIA clusters in the cloud region are studied for a variety of neutron displacement damage dose levels. We then investigate the collective spatio-temporal dynamics of SIA clusters in the presence of internal elastic fields generated by static and mobile dislocations. The main features of the investigations are: (1) determination of the kinetics and spatial extent of defect clouds near static dislocations; (2) assessment of the influence of localized patches of SIA clouds on the pinning-depinning motion of dislocations in irradiated ...

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For an assessment of the future US spallation neutron source (SNS) target performance, radiation induced hardening and microstructural evolution were investigated as a function of ion dose for EC316LN stainless steel. Irradiation was carried out using 3.5 MeV Fe"+, 360 keV He"+, and 180 keV H"+ simultaneous ion-beams at 200 deg. C to simulate the damage, He and H production in the SNS target vessel wall. At low dose (< 1 dpa), the predominant defects were black dots whose number density saturated rapidly within a few dpa. This was followed by the evolution of interstitial loops whose number density saturated below 15 dpa. Although He-bubbles were not visible, severely scalloped loops suggested that the implanted He/H atoms existed in the form of small clusters. Comparison with reported neutron irradiation data showed that hardening and ductility loss occurred mostly in the black dot regime (< 1 dpa), but that good ...

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It is built and tested a transition radiation detector (TRD) to discriminate positrons from protons in the balloon flight TS 93 experiment. It is presented the TRD performance using flight data obtaining a proton-positron rejection factor of the order of 10{sup -3}. During the 24 hour flight, the data in the momentum range 4-50 GeV/c are collected. Using the TRD together with the Silicon calorimeter, it is achieved an overall rejection factor of about 10{sup -5} of positron against the proton background over the entire momentum range.

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Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset ...

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On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.

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The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.

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Nickel ion radiation at 500 C was shown to have a strong effect on the surface electrochemistry and intergranular corrosion (IGC) of stainless steel (SS). Measured current densities in a 1 N sulfuric acid solution at room temperature were increased at active-passive, passive, and transpassive potentials. Radiation effects on the current decay behavior and susecptibility to IGC were similar for a fine-grained (FG) S alloy and for a very large-grained (LG) SS. Radiation-induced segregation (RIS) at the surface was believed to promote higher currents at short times, whereas segregation at grain boundaries was responsible for IG attack. Analytical electron microscopy (AEM) measurements revealed chromium and iron depletion plus Ni and silicon enrichment at grain boundaries in irradiated specimens. Si enhanced dissolution at transpassive potentials, whereas Cr depletion did the same at active-passive and ...

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Computer experiments imitating specimen strain on tension with constant deformation rate have been carried out. A formation possibility of atmosphere from defects around gliding dislocations (I) and a work of Frank-Read sources (II) have been accounted for. In result deformation curves until stresses do not exceed a critical shear stress were calculated. Influence of effects (I) and (II) was analyzed. It is determined that both by pass of dislocations over defect ''atmospheres'' and dislocation multiplication can cause a peak in flow stress occurrence on the deformation curves. Reasons and conditions of such peak occurrence have been studied. 12 refs.; 9 figs. (author).

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This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid ...

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We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors (HBTs) built with an N-Ring, a transistor-level layout-based radiation hardened by design (RHBD) technique. Previous work of single-device ion-beam induced charge collection (IBICC) studies has demonstrated significant reductions in peak collector charge collection and sensitive area for charge collection; however, few circuit studies using this technique have been performed. Transient studies performed with Sandia National Laboratory's (SNL) 36 MeV 16O microbeam on voltage references built with N-Ring SiGe HBTs have shown mixed results, with reductions in the number of large voltage disruptions in addition to new sensitive areas of low-level output voltage disturbances. Similar discrepancies between device-level IBICC results and circuit measurements are found for the ...

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The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.

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A 150 Watt thermophotovoltaic (TPV) power generator is being developed. The technical approach taken in the design focused on optimizing the integrated performance of the primary subsystems in order to yield high energy conversion efficiency and cost effectiveness. An important aspect of the approach is the use of a selective emitter radiating to a bandgap matched photovoltaic array to minimize thermal and optical recuperation requirements, as well as the non-recoverable heat losses. For the initial prototype system, fibrous ytterbia emitters radiating in a band centered at 980 nm are matched with high efficiency silicon photoconverters. The integrated system includes a dielectric stack filter for optical energy recovery and a ceramic recuperator for thermal energy recovery. The system has been operated with air preheat temperatures up to 1350K. The design of the system and development status are presented. {copyright} ...

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Radiation-and-thermal-combined degradation of some kinds of cable insulating and jacketing materials was evaluated by accelerated aging tests. Plasticized polyvinyl chloride (PVC), silicone rubber, crosslinked and non-crosslinked halogen-free flame-retardant polyolefins (NH-XLPO and NH-PO) and ethylene-propylene rubber (EP rubber) of experimental formulation were degraded at accelerated rates, that are 50-1000 times the degradation rate under standard conditions (e.g.; 1Gy/h, 50degC), and a method to assess the lifetime of these materials under standard conditions was studied. The degradation was investigated by measuring tensile properties. In the accelerated aging tests, rates of elongation decrease owing to degradation for these materials were in proportion to the increase in accelerated rate. The PVC lifetime estimated from sequential aging tests had a tendency to extend beyond that from simultaneous aging tests, while the lifetime of other ...

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The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the {mu}m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure ...

International Nuclear Information System (INIS)

Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under triple beam irradiation was harder than that under dual beam irradiation. Irradiation softening and hardening under dual beams was ...

International Nuclear Information System (INIS)

This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.

CERN Document Server

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray ...

International Nuclear Information System (INIS)

Technique, allowing to investigate straggling zone (full braking) from high-energy charged particles in detail, is described. Experimental results on investigation of efective structure, created in polycrystalline molybdenum (99.97%) within 29 MeV alpha-particles straggling zone for fluences from 3.8x10"1"9 up to 3.7x10"2"1 #alpha#/m"2 by methods of microhardness (H_#mu#, X-ray structural analysis (#DELTA#a/a) and transparent electron microscopy (TEM), are presented. It is determined, that for doses from 3.8x10"2"0 #alpha#/m"2 and higher, at #approx#6 MeV energy, molybdenum ''softening'' is observed, H_#mu# curve within straggling zone is well described by alloyage calculated profile. #DELTA#a/a measurements within straggling zone are well described by damage profile. TEM-investigations have shown the developed defective structure even within molybdenum ''softening'' range.

British Library Electronic Table of Contents (United Kingdom)

We performed experimental studies on the convolution/superposition method reported in the former companion paper (Iwasaki in Radiol Phys Technol 4, 2011) using 10-MV X-ray beams from open-jaw-collimated fields. The method uses primary and scatter dose kernels formed for energy bins of X-ray spectra reconstructed as a function of off-axis distance. We made a comparison of calculations and measurements in water phantoms and thorax-like phantoms with respect to percentage depth dose curves, tissue???phantom ratio curves, and dose profiles. We made the dose calculation by taking into account the beam-hardening effect with depth and the off-axis radiation-softening effect. We found that the method could be used, in general, for performing accurate dose calculations.

Energy Technology Data Exchange (ETDEWEB)

Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of irradiated specimens were studied using transmission electron microscopy (TEM) and a nanoindentation ...

International Nuclear Information System (INIS)

We have measured K-edge X-ray absorption spectra of argon in sputtered aluminum films at a synchrotron radiation facility (the Photon Factory). We found that the energy and shape of white line change when the film is annealed at 500 C and the spectrum becomes resembling that of argon implanted in silicon. From the analyses of the X-ray absorption spectra and TEM observation we concluded that argon exists as very small atom clusters with a diameter less than 1 nm or exist as isolated atoms in the as-sputtered aluminum film, and that the size of the clusters become as big as 10 nm diameter when the film is heated. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

Energy Technology Data Exchange (ETDEWEB)

Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

Energy Technology Data Exchange (ETDEWEB)

This thesis is concerned with the optimization and development of the production of nanofocusing refractive X-ray lenses. These optics made of either silicon or diamond are well-suited for high resolution X-ray microscopy. The goal of this work is the design of a reproducible manufacturing process which allows the production of silicon lenses with high precision, high quality and high piece number. Furthermore a process for the production of diamond lenses is to be developed and established. In this work, the theoretical basics of X-rays and their interaction with matter are described. Especially, aspects of synchrotron radiation are emphasized. Important in X-ray microscopy are the different optics. The details, advantages and disadvantages, in particular those of refractive lenses are given. To achieve small X-ray beams well beyond the 100 nm range a small focal length is required. This is achieved in refractive lenses by ...

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

Energy Technology Data Exchange (ETDEWEB)

The optically stimulated luminescence (OSL) results a highly appropriate dosimetric technique for readings of absorbed radiation 'in alive' and 'in situ', as well as in real time. The CVD diamond on the other hand presents excellent qualities like radiation reader thanks to its reproducibility, radiation resistance, biocompatibility and non toxicity. The present work studies the answer of two diamond films pure and polluted with nitrogen (750 ppm) grown by the Chemical Vapor Deposition method (CVD) on silicon substrate (001) irradiated with beta (Sr-90) in the 0.833-100 Gy interval. The optical stimulation was carried out by 40 seconds with infrared laser (830 nm, 0.36 W/cm{sup 2}) and the filter BG-39 (300-600 nm) coupled the PM. The intensity and the decay of the hyperbolic type of the LOE curves were similar in both samples, for the non doped diamond were observed ...

International Nuclear Information System (INIS)

Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20 min at temperatures 600-800 deg. C) either from surface silicide (Pd_2Si, PtSi) or implanted layers. Results show that this procedure allows a strong localization of substitutional Pd and Pt at the depth where the damage produced by helium peaks. This results in local reduction of carrier lifetime by an almost ideal recombination centers - the acceptor level of substitutional Pd (E _c - 0.22 eV) or Pt (E _c - 0.23 eV). While optimum conditions for Pt in-diffusion are about 700 deg. C, Pd gives the best results already at lower temperatures (600 deg. C) where it also exhibits higher peak solubility. Both methods were used for optimization of turn-off properties of high power PiN diodes. The devices, where the lifetime was killed locally by Pd and Pt, exhibited similar trade-off between the static and dynamic parameters as the ...

Science.gov (United States)

Cryogenic coolers are often used in modern spacecraft in conjunction with sensitive electronics and sensors of military, commercial and scientific instrumentation. The typical space requirements are: power efficiency, low vibration export, proven reliability, ability to survive launch vibration/shock and long-term exposure to space radiation. A long-standing paradigm of exclusively using "space heritage" equipment has become the standard practice for delivering high reliability components. Unfortunately, this conservative "space heritage" practice can result in using outdated, oversized, overweight and overpriced cryogenic coolers and is becoming increasingly unacceptable for space agencies now operating within tough monetary and time constraints. The recent trend in developing mini and micro satellites for relatively inexpensive missions has prompted attempts to adapt leading-edge tactical cryogenic coolers for suitability in the space environment. The primary ...

Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Science.gov (United States)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

International Nuclear Information System (INIS)

High temperature deformation behavior of an alpha + beta titanium alloy Ti-3Al-4V has been investigated at 910 deg. C. by using the method of cross head speed cycling. On the basis of flow stress, strain rate and strain rate sensitivity data, the alloy was found to exhibit strain hardening at this temperature which resulted in degradation in superplastic properties of the alloy. A high beta-phase volume fraction and grain-growth in both alpha and beta phases were considered responsible for the observed hardening effect. (author)

International Nuclear Information System (INIS)

... University, Fracture and Reliability Research Institute, Sendai, Miyagi (Japan)

International Nuclear Information System (INIS)

The #beta#-CEZ alloy : Ti-5%Al-2%Sn-4%Zr-4%Mo-2%Cr-1%Fe is a near #beta# titanium alloy. Since its processing routes include heat treatment (consisting of solution treatment and ageing), it has been decided to study the influence of the #beta# phase stability on #alpha# phase precipitation and hardening kinetics. Small sized specimens, coming from industrial heats, have been heat treated above and below the #beta# transus, and then water quenched. Therefore, several degree of #beta# stability are obtained. When it is increased (i.e. the solution treatment temperature is lowered), #alpha# or #omega# phases precipitations are delayed, as well as the hardening phenomena. Moreover, the #omega# stability domain is reduced. The mechanisms of #alpha# or #omega# precipitation are discussed, and related to the hardening kinetics. (orig.).

British Library Electronic Table of Contents (United Kingdom)

A fully lamellar ferrite/cementite nanostructure was designed in a low C steel by using a specific thermal treatment. The strengthening of such microstructure has been investigated as a function of prestrain by rolling up to a deformation of 300%. As in usual pearlitic structure, its work-hardening shows no saturation and its elongation to fracture remains rather constant instead of decreasing drastically as conventional steels. The hardening by a similitude effect is thus not the privilege of pearlitic steels. Nevertheless, its lower initial work-hardening rate at low strain compared to an equivalent pearlitic steel and a lower hardening potential at high strain let us suspect major differences in the nature and the behaviour of ferrite channels in relation to the morphogenesis of the mic...

International Nuclear Information System (INIS)

Purpose/Objective: With the advent of computed tomography and magnetic resonance imaging, the three dimensional representation of the patient anatomy has become an invaluable resource for better diagnosis and delineation of the target volume and sensitive structures in radiation therapy. Although the therapeutic linear accelerator industry has made available highly sophisticated equipment, the aggressiveness in dose prescription and delivery has to be complimented by accurate dose computation methods. We have adopted a convolution/superposition algorithm for the calculation of absolute dose that fully accounts for the external shape and internal structure of the patient for photon treatment radiotherapy. In this paper, we will discuss the principles of the convolution algorithm and we will show how the computed dose compares to clinically relevant treatment techniques. Materials and Methods: A computer controlled data acquisition system and a water tank where used ...

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

International Nuclear Information System (INIS)

The role of helium in a process of embrittlement and hardening of RAFM steels was investigated in EUROFER97 based experimental heats, ADS2, ADS3 and ADS4, that were doped with different contents of natural B and the separated 10B-isotope (0.008-0.112 wt.%). The neutron irradiation of the boron doped and the reference RAFM steels was performed in the Petten High Flux Reactor up to 16.3 dpa at different temperatures between 250 and 450 deg. C. The embrittlement behaviour and hardening was investigated by instrumented Charpy-V tests with subsize specimens. Irradiation lead to generation of 84, 432 and 5580 appm He in ADS2, ADS3 and ADS4 steels, respectively. At irradiation temperatures Tirr ? 350 deg. C the boron doped steals show progressive embrittlement and reduction of toughness with increasing helium amount. The analysis of the hardening vs. embrittlement behaviour at Tirr ? 350 deg. C reveals ...

Energy Technology Data Exchange (ETDEWEB)

An evaluation of eastern shale oil (ESO) residue as an asphalt additive to reduce oxidative age-hardening and moisture susceptibility was conducted. Rheological and infrared analyses of the unaged and aged asphalts and blends were then conducted to evaluate oxidative age-hardening. 18 refs., 5 figs., 6 tabs.

International Nuclear Information System (INIS)

Irradiation response on the tensile properties of 9Cr-2W steels has been investigated following FFTF/MOTA irradiations at temperatures between 646 and 873 K up to doses between 10 and 59 dpa. The largest irradiation hardening accompanied by the largest decrease in the elongation is observed for the specimens irradiated at 646 K at doses between 10 and 15 dpa. The irradiation hardening appears to saturate at a dose of around 10 dpa at the irradiation temperature. No hardening but softening was observed in the specimens irradiated at above 703 K to doses of 40 and 59 dpa. Microstructural observation by transmission electron microscope (TEM) revealed that the dislocation loops with the a left angle 100 right angle type Burgers vector and small precipitates which were identified to be M_6C type carbides existed after the irradiation at below 703 K. As for the void formation, the average size of voids increased with increasing ...

International Nuclear Information System (INIS)

The effects of key metallurgical variables on the low fluence hardening in a set of A533B model steels were evaluated over a wide range of irradiation temperatures. Above about 163 degrees C hardening increased with higher copper and nickel contents, as is typical of the pressure vessel operating regime around 290 degrees C. However, at 121 degrees C the hardening was generally lower and unaffected by copper and nickel variations. This observation of decreased hardening with lower temperature (e.g. an open-quotes invertedclose quotes temperature dependence) is tentatively attributed to a reduced contribution of copper precipitation. Tensile data for a set of commercial steels with a range of (uncontrolled) compositions also showed minimal sensitivity to copper variations at 121 degrees C. Unlike the hardness data no systematic reductions in the yield stress increases were observed between 163 and 121 ...

International Nuclear Information System (INIS)

The convolution/superposition calculations for radiotherapy dose distributions are traditionally performed by convolving polyenergetic energy deposition kernels with TERMA (total energy released per unit mass) precomputed in each voxel of the irradiated phantom. We propose an alternative method in which the TERMA calculation is replaced by random sampling of photon energy, direction and interaction point. Then, a direction is randomly sampled from the angular distribution of the monoenergetic kernel corresponding to the photon energy. The kernel ray is propagated across the phantom, and energy is deposited in each voxel traversed. An important advantage of the explicit sampling of energy is that spectral changes with depth are automatically accounted for. No spectral or kernel hardening corrections are needed. Furthermore, the continuous sampling of photon direction allows us to model sharp changes in fluence, such as those due to collimator tongue-and-groove. The ...

Energy Technology Data Exchange (ETDEWEB)

Multilayer mirrors for the extreme ultraviolet (EUV) are keyelements for numerous applications of coherent EUV sources such as newtabletop lasers and free-electron lasers. However the field ofapplications is limited by the radiation and thermal stability of themultilayers. Taking into account the growing power of EUV sources thestability of the optics becomes crucial. To overcome this problem it isnecessary to study the degradation of multilayers and try to increasetheir temporal and thermal stability. In this paper we report the resultsof detailed study of structural changes in Sc/Simultilayers when exposedto intense EUV laser pulses. Various types of surface damage such asmelting, boiling, shockwave creation and ablation were observed asirradiation fluencies increase. Cross-sectional TEM study revealed thatthe layer structure was completely destroyed in the upper part ofmultilayer, but still survived below. The layers adjacent tothe substrateremained intact even ...

Energy Technology Data Exchange (ETDEWEB)

Displacements per atom (DPA) is a widely used damage unit for displacement damage in nuclear materials. Calculating the DPA for SiC irradiated in a particular facility requires a knowledge of the neutron spectrum as well as specific information about displacement damage in that material. In recent years significant improvements in displacement damage information for SiC have been generated, especially the energy required to displace an atom in an irradiation event and the models used to describe electronic and nuclear stopping. Using this information, numerical solutions for the displacement functions in SiC have been determined from coupled integro-differential equations for displacements in polyatomic materials and applied in calculations of spectral-averaged displacement cross sections for SiC. This procedure has been used to generate spectrally averaged displacement cross sections for SiC in a number of reactors used for radiation damage testing of fusion ...

International Nuclear Information System (INIS)

... radiation effects RADIATIONS. WOOD-PLASTIC COMPOSITES.

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

Energy Technology Data Exchange (ETDEWEB)

The use of standard cementitious material creates pulses of pH in the magnitude of 12-13 in the leachates and release alkalis. Such a high pH is detrimental and also unnecessarily complicates the safety analysis of the repository. As no reliable pH-plume models exist, the use of products giving a pH below 11 in the leachates facilitates the safety analysis. Also, according to current understanding, the use of low-pH cement (pH = 11) will not disturb the functioning of the bentonite, although limiting the amount of low-pH cement is recommended. A result of the project is that there are both low-pH cementitious material for grouting larger fractures (= 100 {mu}m) and non-cementitious material for grouting smaller fractures (< 100 {mu}m) that will, after further optimisation work, be recommended for grouting of deep repositories. This project concentrated on the technical development of properties for the low pH grouts. Long-term safety and environmental aspects and durability of ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Energy Technology Data Exchange (ETDEWEB)

Fatigue tests were accomplished with a series of specimens doped with trace elements of a hardened Fe-Ni-Cr alloy, cast and hardened with intermetallic phases for determining the influence of these elements on the high temperature strength properties. The results of extensive fatigue tests show that even small contents of Te, Bi, Se, Pb, Tl and Zn considerably influence the life and creep processes especially after longer running periods, when added individually or combinedly. In contrast to this, the fatigue ductility is reduced by trace element additions even with short running periods. The order in which the metallic trace elements influence the fatigue properties nearly correlates with earlier work concerning Ni- and Co-superalloys. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Due to size and costs of big slewing rings, the common methods of experimental trial and error together with destructive test methods for verification of the inductive hardening process are limited. Thereby it is essential to simulate the hardening process in addition to the tests. With these simulations, it should be possible to get conclusions for the hardening pattern, the residual stress and distortion. With actually existing methods a fully three dimensional simulation is extremely time consuming. For that reason, a new method was developed that combines two dimensional with three dimensional simulation to shorten the time for calculation tremendously. (orig.)

International Nuclear Information System (INIS)

Precipitation-hardened single crystals of a beta (bcc) Ti--40 at. percent V--1.0 at. percent Si alloy were deformed in compression at 77 and 298"0K. The dependence of the yield stress upon aging time at 843"0K for solution-treated crystals shows two maxima which are caused by silicide precipitates. The orientation dependence of the yield stress and of the active macroscopic slip plane were determined as a function of aging time. The solution-treated as well as aged crystals exhibit an asymmetry of both the yield stress and the plane of slip, the degree of asymmetry being larger at 77 than at 298"0K. The asymmetry of slip and yielding is not affected by the presence of precipitation hardening. Results indicate that the effect of the dislocation core structure on dislocation motion is independent of the presence of precipitates. (auth).

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and ...

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

Energy Technology Data Exchange (ETDEWEB)

Simultaneous nitriding and ageing heat treatments of precipitation hardenable tool steel was carried out inside a DC-pulsed plasma nitriding reactor. A single heat treatment cycle was done, as the plasma nitriding and age hardening processes occur approximately at the same ranges of temperatures and times. Specimens of Cr-Ni-Mo-Al age hardenable steel, in the solubilized and solubilized and aged conditions, were tested. Plasma nitriding and ageing, carried out at 500 deg. C for times ranging between 2 and 8 h, increased the surface hardness up to 1000 HV, producing case depths between 100 and 200 {mu}m. The core hardness of solubilized samples increased from 30 to 39 Rockwell C after the plasma nitriding treatment proving the possibility of nitriding and ageing at the same treatment cycle. The pre-aged samples did not show any overageing after the simultaneous plasma nitriding and ageing treatments. The corrosion resistance ...

International Nuclear Information System (INIS)

The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.

Energy Technology Data Exchange (ETDEWEB)

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

International Nuclear Information System (INIS)

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

International Nuclear Information System (INIS)

Effect of strain and temperature on high temperature deformation properties of an alpha + beta titanium alloy Ti-6Al-4V has been investigated in the temperature range 800 to 910 deg. C by using the method of cross head speed cycling. On the basis of flow stress strain rate-strain rate sensitivity data and microstructural studies of the undeformed and deformed regions of tensile test pieces, both strain introduced hardening and softening effects were observed during the course of deformation which could be associated with grain coarsening and refining respectively. (author)

International Nuclear Information System (INIS)

Corrosion testings of model alloys, corresponding by chemical composition to simple and complex-alloyed #gamma#- and #gamma#'-phases of nickel heat-resistant alloys are conducted in sodium sulfate and chloride melts. It is ascertained that heat resistant nickel alloys containing over 50 % of hardening #gamma#'-phase, are subject to disastrous sulfide corrosion (SC). Resistance against SC alloys containing below 50 % of #gamma#'-phase is determined by the resistance of #gamma#-solid solution. 10 refs., 3 figs., 2 tabs.

Energy Technology Data Exchange (ETDEWEB)

Stress-rupture strength tests were made of metal steam pipe (12Kh1MF steel) in various conditions, the original, after aging under laboratory conditions (580{degrees}C, 10,000 h), and after long service. It was shown that the more the steel is hardened by heat treatment or cold plastic working in the original condition, the less it hardens in creep. It was established that softening in creep of steel with a moderate yield strength is caused primarily by aging and with a high yield strength by pore formation.

International Nuclear Information System (INIS)

The hardening and embrittlement of reactor pressure vessel (RPV) steels is of great concern in the actual nuclear power plant life assessment. This embrittlement is caused by irradiation-induced damage, like vacancies, interstitials, solutes and their clusters. The current procedure to estimate material properties for the irradiated pressure vessels is based on Charpy-V tests of identical material located at the inner shell of the reactor. But the reason for the embrittlement of the materials is not yet totally known. The real nature of the irradiation damage should thus be examined as well as its evolution in time. Fe-Cu binary alloys are often used to mimic the behaviour of such steels. Their study allows. Identifying some of the defects responsible of the hardening, especially when compared to pure iron or C-micro-alloyed iron. More recently the influence of manganese and nickel in low-Cu RPV steels has become a significant topic. Thus in ...

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

UK PubMed Central (United Kingdom)

Abstract The authors provide a survey of how images are used in radiation therapy to improve the precision of radiation therapy plans, and delivery of radiation treatment. In contrast...Full Text Available

Environmental Research Database

No further description is available

International Nuclear Information System (INIS)

An experimental investigation of the effect of nickel content on irradiation hardening of reactor pressure vessel steels was conducted. The alloys studied, with nickel contents ranging from 0 to 1.7%, included five sets of steels representing variations in copper contents and other metallurgical variables. Various subsets of the alloys were irradiated at selected combinations of flux, fluence, and irradiation temperature. Irradiation hardening was measured by either changes in the uniaxial yield stress or diamond pyramid hardness. Higher hardening rates with increasing nickel were observed in controlled experiments on commercial-type steels containing high copper concentrations (0.4% Cu). The effect of nickel increased with increasing fluence and decreasing temperature. At high fluence (>10"1"9 n/cm"2) the hardening increased with nickel at an average rate of about 100 MPa/%Ni. There also appeared to ...

International Nuclear Information System (INIS)

... radiation effects human populations low dose irradiation neoplasms radiation

International Nuclear Information System (INIS)

The case of spontaneous radiation of channeled ultrarelativistic particles is considered when the dipolarity condition is not satisfied. The change of the particle longitudinal velocity affecting the maximum radiation frequency is included. The angular and frequency characteristics of the radiation for superhigh energies are studied for the first time. It is shown that there is an optimum energy at which the radiation density is maximum. The influence of the angle at which electrons enter a crystal and of the beam divergence on the radiation is investigated. The problem of quasichanneled particle radiation and also the radiation in axis-plane transitions are considered. (author).

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... odd nuclei organic compounds radiation effects radioisotopes synthesis

International Nuclear Information System (INIS)

... compounds plants radiation effects radioisotopes reaction kinetics trees

Science.gov (United States)

duced and spontaneous radiation. The amount of polarization is ... of the induced and spontaneous radiation patterns. Therefore ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

International Nuclear Information System (INIS)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

Science.gov (United States)

Al2O3-based ceramic is one of the most widely used materials for tools employed in hardened steel turning applications due to its high hardness, wear resistance, heat resistance and chemical stability. The objective of this work is to predict the lives of Al2O3-(W, Ti)C ceramic tools in intermittent turning of hardened AISI 1045 steel by means of damage evolution model taking into account the mechanical loading and thermal effect in the cutting process. A damage evolution model analyzing the RVE with uniformly distributed interacting cracks is constructed based on micromechanics. The calculated results of the proposed damage evolution model are compared with the lives of two kinds of Al2O3-(W, Ti)C ceramic tools obtained through experiments. It is found that the proposed model can be used to predict the lives of the ceramic cutting tools in intermittent turning operation.

International Nuclear Information System (INIS)

Type 316 stainless steel is the primary candidate austenitic structural material for fusion first wall constructions. Here, type 316L(N) stainless steel plate material has been irradiated up to 10 dpa at temperatures of 80, 225, 325, and 425 C in the High Flux Reactor (HFR) of Petten. Tensile tests have been performed in the temperature range from RT to 575 C at a conventional strain rate of 5 x 10"-"4 s"-"1. The results of the tensile tests are analyzed in terms of irradiation hardening and loss of ductility due to irradiation. Tensile properties saturate in the early stage (within 0.65 dpa) at the lowest applied irradiation temperature. It is indicated that the most severe degradation of tensile ductility occurs in the temperature range of 275 to 350 C. Comparison with literature data revealed a large scatter in irradiation hardening at irradiation temperatures above 325 C.

International Nuclear Information System (INIS)

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for ...

CERN Document Server

Volume sources is used for standard sources by radioactive measurement using Ge semiconductor detector of environmental sample, e.g. water, soil and etc. that require large volume. The commercial volume source used in measurement of the water sample is made of agar-agar, and that used in measurement of the soil sample is made of alumina powder. When the plastic receptacles of this two kinds of volume sources were damaged, the leakage contents cause contamination. Moreover, if hermetically sealing performance of volume source made of agar-agar fell, volume decrease due to an evaporation off moisture gives an error to radioactive measurement. Therefore, we developed the two type methods using unsaturated polyester resin, vinilester resin, their hardening agent and acrylicresin. The first type is due to dispersing the hydrochloric acid solution included the radioisotopes uniformly in each resin and hardening the resin. The second is due to ...

CERN Document Server

The massive stars in the Galactic center inner arcsecond share analogous properties with the so-called Hot Jupiters. Most of these young stars have highly eccentric orbits, and were probably not formed in-situ. It has been proposed that these stars acquired their current orbits from the tidal disruption of compact massive binaries scattered toward the proximity of the central supermassive black hole. Assuming a binary star formed in a thin gaseous disk beyond 0.1 pc from the central object, we investigate the relevance of disk-satellite interactions to harden the binding energy of the binary, and to drive its inward migration. A massive, equal-mass binary star is found to become more tightly wound as it migrates inwards toward the central black hole. The migration timescale is very similar to that of a single-star satellite of the same mass. The binary's hardening is caused by the formation of spiral tails lagging the stars inside the binary's ...

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

International Nuclear Information System (INIS)

Tungsten (W) coating on fusion candidate V-4Cr-4Ti (NIFS-HEAT-2) substrate was demonstrated with plasma spray process for the purpose of applying to protection of the plasma facing surface of a fusion blanket. Increase in plasma input power and temperature of the substrate was effective to reduce porosity of the coating, but resulted in hardening of the substrate and degradation of impact property at 77 K. The hardening seemed to be due to contamination with gaseous impurities and deformation by thermal stress during the coating process. Since all the samples showed good ductility at room temperature, further heating seems to be acceptable for the vanadium substrate. The fracture stress of the W coating was estimated from bending tests as at least 313 MPa, which well exceeds the design stress for the vanadium structure in fusion blanket. (author)

International Nuclear Information System (INIS)

By means of the light microscopy and by the measurement of the mechanical properties one investigated into the phase composition and the properties of Al-Mg-Ce and Al-Mg-Y system alloys. One plotted the isothermal cross sections of the mentioned systems under 430 and 275 deg C temperatures at up to 16% magnesium concentration and up to 0.7% yttrium concentration. One determined the yield limit and strength, the relative elongation of Al-Mg base hardened and deformed alloys containing 7.0-9.9% Mg and Ce, Y, Mn, Zr dopes upon ageing under 175, 200, 250 and 300 deg C temperatures within the ageing time ensuring the hardening maximum effect

International Nuclear Information System (INIS)

Smooth and notched fatigue behavior is presented for an age-hardenable metastable #beta#-titanium alloy (Ti-3Al-8V-6Cr-4Mo-4Zr). The as-solution heat treated condition exhibits low fatigue limits and high ductility, while the high-strength condition has higher fatigue limits, but poor ductility. A new thermomechanical technique employs shot peening and heat treating to selectively age-harden only the surface. The fatigue limit is improved to levels well above that of the high strength condition, while retaining appreciable ductility, since the bulk material remains in the solution heat treated condition. (orig./MM).

British Library Electronic Table of Contents (United Kingdom)

Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 1013 ions/cm2)?was?observed. Nanoindentation tests show a strong ion-induced increase of hardness (up?to 150?200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the?depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating i...

Energy Technology Data Exchange (ETDEWEB)

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

International Nuclear Information System (INIS)

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

Science.gov (United States)

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

International Nuclear Information System (INIS)

Portuguese Sep-Oct 1996 p. 571 Brazil Campos, Patricia Sao Paulo

Science.gov (United States)

The principles of radionuclide excitation of X-ray fluorescence radiation and its application in

International Nuclear Information System (INIS)

This book gives an overview of the entire field of radiation protection with the subject areas radioactivity, X-rays, UV radiation, laser beams and high-frequency electromagnetic fields. It deals graphically with the most important physical notions, the incidence, origin, properties and biological effects of types of radiation, administrative and practical protection measures and the code of rules governing them. Apart from fundamentals of radiation protection the emphasis on the following: natural radiation exposure, radiation exposure to radon, disaster relief plans in the environment of nuclear plant, the precautionary radiation protection system evolved after Chernobyl, radiation exposure through UV radiation devices, radio, RF communication, radar, microwave ovens and high-voltage transmission ...

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...

Energy Technology Data Exchange (ETDEWEB)

The strain gradient crystal plasticity theory is applied to study the deformation of planar single crystal with a void under a nominally uniaxial tension. The crystal theory assumes elevated strain hardening due to slip gradients and has a constitutive length scale. The effects of the void size with respect to the constitutive length scale on the single crystal deformation are investigated.

Energy Technology Data Exchange (ETDEWEB)

Stress relaxation was studied at 408 K on AZ31 reinforced by ceramic foam produced by in situ foaming of filler loaded preceramic polymer melt. Reinforcement causes significant enhancement of the resistance against stress relaxation compared to AZ91. It is correlated with hardening by the ceramic skeleton as well as ceramic particles formed in the AZ31-matrix. (orig.)

International Nuclear Information System (INIS)

The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness

Energy Technology Data Exchange (ETDEWEB)

Carbide reactions occurring in a precipitation-hardening gamma/gamma-prime Ni-Cr alloy during prolonged high-temperature aging are investigated experimentally. It is found that the decomposition of primary MC carbides, which is accompanied by the precipitation of M23C6 particles, may lead to void nucleation and growth. The effect of carbide transformations on the residual properties of the material at temperatures above the equicohesion temperature is observed at the late stages of aging only. 6 references.

Science.gov (United States)

An instrument has been constructed for the measurement of residual stress in steel. If necessary, large objects can be examined in situ. An account is given of the principles and construction. A special stressing frame provides for calibration. An application to residual stress in gear blanks has established a systematic variation of surface stress with nickel content and confirmed the overall effect of the surface hardening treatment.

ScienceCinema

...spontaneous radiation ...

International Nuclear Information System (INIS)

Short communications only.

International Nuclear Information System (INIS)

Short communication.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Short communication.

Science.gov (United States)

Cancer and Tobacco Abuse

International Nuclear Information System (INIS)

... chemical radiation effects decomposition extraction columns gamma radiation

Science.gov (United States)

Prostate Cancer; Psychosocial Effects of Cancer and Its Treatment; Radiation Toxicity; Sexual Dysfunction and Infertility

Wastenet

... Radiation Protection Products and Equipment Find and compare a variety of radiation protection products and equipment on the world's largest environmental industry portal. View product ...

Energy Technology Data Exchange (ETDEWEB)

This chapter is concerned with standards and guidances for limiting radiation exposures. It is divided into three sections, each of which has several parts. Section 1: Ionizing Radiation -- Standards and Guidances Applicable to the Public: Part A, Radiation Protection Standards; Part B, Environmental Radiation Standards; Part C, Exempt Levels of Radioactivity; Part D, Protective Action Guides for Accidents. Section 2: Ionizing Radiation -- Standards Applicable to the Workplace. Section 3: Medical and Other Standards.